20-07-2011 дата публикации
Номер: CN0101794840B
Принадлежит:
The invention discloses a method for preparing a flexible CdTe thin film solar cell. The solar cell structure consists of stainless steel, a graphite buffer layer, CdTe, CdS, and ITo, wherein the CdS and the CdTe form a PN node. The method is characterized by adopting the following preparation steps: a, pretreating a stainless steel substrate; b, growing the graphite buffer layer by using chemical vapor phase; c, growing a CdTe thin film on the stainless substrate with the prepared graphite buffer layer by using a close-space sublimation method; and annealing the CdTe thin film by using the CdCl2; d, growing a CdS thin film on a substrate with the prepared CdTe thin film by using the close-space sublimation method; e, preparing In2O3 on the stainless steel substracte with the prepared CdTe thin film; F transparent conductive film on the stainless substrate; and f, obtaining the flexible CdTe thin film solar cell. The method has the advantages of simple process, streamlined operation and ...
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