08-10-2020 дата публикации
Номер: US20200321222A1
Автор:
Bae Jae Hun,
Cho Hyun,
Do Won Chul,
Han Dong Hoon,
Ki Won Myoung,
Kim Do Hyung,
Kim Dong Jin,
Kim Jin Han,
LEE Ji Hun,
Park Jun Hwan,
Son Seung Nam,
Zwenger Curtis
Принадлежит:
A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias. 120-. (canceled)21. A method of manufacturing a semiconductor package , the method comprising:{'b': '1', 'claim-text': a carrier; and', {'b': '1', 'an S dielectric layer directly on the carrier,'}, {'b': 1', '1', '1, 'wherein the first structure comprises a first S side facing away from the carrier, and a second S side opposite the first S side;'}], 'providing a first structure (S) comprising{'b': 1', '1', '1', '1, 'forming a first signal distribution structure (SDS) on the first S side by, at least in part, sequentially forming a first plurality of layers of the first signal distribution structure on the first S side in a first direction, the first plurality of layers comprising a first SDS conductive layer that laterally routes electrical signals;'}after said forming the first signal distribution structure, removing the carrier from the first structure;coupling a semiconductor die to the first signal distribution structure in the first direction; and{'b': 2', '2, 'after said coupling the semiconductor die and said removing the carrier from the first structure, forming a second signal distribution structure (SDS) on the first signal distribution structure by, at least in part, sequentially forming a second plurality of layers of the second signal distribution structure in a second direction opposite the first direction, the second signal distribution structure comprising a first SDS conductive layer that laterally distributes electrical signals.'}2211. The method of claim 21 , wherein said forming the first signal distribution structure on the first S side comprises claim 21 , after said providing the first structure claim 21 , forming the ...
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