СПОСОБ ПОЛУЧЕНИЯ ПОРОШКООБРАЗНОЙ ВОДОПОГЛОЩАЮЩЕЙ СМОЛЫ

Изобретение относится к способу получения порошкообразной водопоглощающей смолы, применяемой в поглощающих или гигиенических изделиях. На первой стадии способа проводят радикальную полимеризацию основного мономерного компонента, содержащего акриловую кислоту и/или ее соль, другого мономера в количестве от 0 до 30 мол.%, внутреннего сшивающего агента в количестве от 0,001 до 2 мол.% в присутствии инициатора в количестве от 0,001 до 2 мол.%. На второй стадии полученный гидрогелевый полимер сушат и измельчают с получением порошка водопоглощающей смолы, имеющего степень нейтрализации от 50 до 90 мол.%, средневзвешенный диаметр частиц от 300 до 600 мкм и частицы диаметром менее 150 мкм в количестве от 0 до 10 мас.%. На третьей стадии к порошку водопоглощающей смолы, имеющему температуру от 40 до 80°С, добавляют сшивающий агент, обрабатывающий поверхность, который включает агент сшивания поверхности, воду, гидрофильный органический растворитель в количестве от 0 до 10 мас.%. На четвертой стадии ...

ВОДОПОГЛОЩАЮЩИЙ АГЕНТ В ВИДЕ ЧАСТИЦ НЕПРАВИЛЬНОЙ ФОРМЫ ПОСЛЕ ИЗМЕЛЬЧЕНИЯ

Изобретение относится к получению водопоглощающего агента в виде частиц для поглощающего субстрата тонкого типа. Водопоглощающий агент в виде частиц неправильной формы после измельчения включает поверхностно-сшитую водопоглощающую смолу, полученную путем полимеризации с образованием поперечных связей ненасыщенного мономера, содержащего акриловую кислоту и/или ее соль. Агент содержит агломерированные частицы и обладает способностью удержания жидкости после центробежной обработки (CRC) в физиологическом солевом растворе, составляющей не менее 32 г/г. Его среднемассовый размер частиц (D50) находится в диапазоне от 200 до 400 мкм. Частицы диаметром менее 600 мкм и не менее 150 мкм составляют от 95 до 100 мас.%. При использовании данного водопоглощающего агента в виде частиц можно получить такие поглощающие изделия, которые имеют мало неровных поверхностей после поглощения воды и обладают превосходными свойствами проникновения жидкости. 3 н. и 19 з.п. ф-лы, 1 ил., 9 табл.

ПАРА-ТРЕТ-БУТИЛ-КАЛИКС[6]АРЕНЫ, СОДЕРЖАЩИЕ ТРИ КИСЛОТНЫЕ ФУНКЦИОНАЛЬНЫЕ ГРУППЫ В ПОЛОЖЕНИИ 2, 4 И 3, НАНЕСЕННЫЕ НА ПОДЛОЖКУ ЖИДКИЕ МЕМБРАНЫ, СОДЕРЖАЩИЕ ИХ МАТЕРИАЛЫ-ПОДЛОЖКИ И ИХ ПРИМЕНЕНИЕ

Настоящее изобретение относится к материалу-подложке для комплексообразования и селективной экстракции америция, плутония, урана или тория в их катионной форме, который является пара-трет-бутил-каликс[6]ареном формулы (IIA), где R'1, R'3 и R'5, идентичные или разные, представляют собой, каждый отдельно: (i) линейный или разветвленный C1-6 алкил, нанесенный на подложку, при этом одна из групп R'1, R'3 и R'5 в соединении формулы (IIA) является группой (ii); (ii) спейсер-подложка, где спейсер является двухвалентным радикалом, выбранным из группы, в которую входят арил(С1-6алкил)арилы; и подложку выбирают из подложки, являющейся сополимером хлор- или бром-метилстирола и дивинилбензола. Изобретение также относится к нанесенной на подложку жидкой мембране для комплексообразования и селективной экстракции америция, плутония, урана или тория в их катионной форме, содержащей пара-трет-бутил-каликс[6]-арен формулы (IA) или (IB), который растворен в органическом растворителе, имеющем точку кипения ...

МОДИФИЦИРОВАННЫЕ СИЛАНОМ ДИСПЕРСИОННЫЕ ПОРОШКИ

Изобретение относится к модифицированным силаном редиспергируемым в воде полимерным порошковым составам и к их применению в гидравлически схватывающихся системах. Предложен редиспергируемый в воде полимерный порошковый состав для применения в продуктах строительной химии, получаемый путем проводимой в водной среде радикальной полимеризации одного либо нескольких мономеров, выбранных из группы, включающей виниловые эфиры неразветвленных или разветвленных алкилкарбоновых кислот с 1-15 атомами углерода, метакрилаты и акрилаты спиртов с 1-15 атомами углерода, винилароматические соединения, олефины, диены и винилгалогениды, с последующей сушкой полученной дисперсии полимера, причем перед сушкой в дисперсию полимера добавляют один либо несколько силанов, содержащих аминовый или эпоксиостаток. Предложен также способ получения и варианты применения заявленного порошкового состава. Технический результат - предложенный состав обеспечивает надежное прикрепление различных плиток в условиях строительства ...

ШИНЫ И ПРОТЕКТОРЫ, ИЗГОТОВЛЕННЫЕ ИЗ СМОЛЫ, ПОЛУЧЕННОЙ ПОЛИМЕРИЗАЦИЕЙ ФЕНОЛЬНЫХ, АРОМАТИЧЕСКИХ И ТЕРПЕНОВЫХ СОЕДИНЕНИЙ

Изобретение относится к композиции для протекторов шин, добавке для протекторов шин и способу приготовления композиции для протекторов шин. Композиция включает каучуковый компонент, выбранный из группы, состоящей из синтетического диенового каучука и природного каучука, и олигомерную смолу, полученную из компонента а), включающего по меньшей мере один мономер, представляющий собой терпен, выбранный из группы, состоящей из α-пинена, β-пинена, δ-3-карена, 3-карена, D-лимонена и дипентена, компонента b), включающего по меньшей мере один мономер, выбранный из группы, состоящей из стирола и α-метилстирола, и компонента с), включающего мономер, представляющий собой фенол. Технический результат - получение добавок для изготовления шин, улучшающих их свойства. 3 н.п. ф-лы, 6 табл.

ПОЛУЧЕНИЕ МОЛЕКУЛЯРНО-ИМПРИНТИРОВАННЫХ ПОЛИМЕРОВ В РЕЗУЛЬТАТЕ СШИВАНИЯ

Изобретение относится к способу получения нерастворимых молекулярно-импринтированных полимеров (МИП). Способ получения нерастворимых молекулярно-импринтированных полимеров (МИП) включает: a) получение растворимых или полурастворимых полимеров МИП, которые характеризуются тем, что 1) все полимеры будут связаны с матричными агентами, которыми они были импринтированы и 2) имеют размеры, которые делают возможным их разделение на хроматографической стадии при использовании хроматографии со слоем уплотненного адсорбента, где размеры растворимых или полурастворимых МИП, полученных на стадии а), являются такими, что они будут отфильтровываться через мембранный фильтр, имеющий отсечку менее или равную 900 нм, b) сшивание растворимых или полурастворимых полимеров МИП со стадии а) таким образом, чтобы получить нерастворимые МИП, которые связывают указанные матричные агенты, и c) необязательно выделение, концентрирование или очистку полимеров МИП, полученных в результате сшивания на стадии b). Технический ...

ПОЛИПРОПИЛЕН ДЛЯ ПЕНОПЛАСТА И ПЕНОПОЛИПРОПИЛЕНА

Изобретение относится к полипропиленовой композиции для пенопласта, способу получения полипропиленовой композиции и пенопласта и к вспененным изделиям, полученным из полипропиленовой композиции. Композиция содержит полипропиленовый базовый полимер в количестве не менее 96 масс.% от общей массы полипропиленовой композиции и содержание веществ, нерастворимых в горячем ксилоле, в количестве от 0.10 до 0.30 масс.% от общей массы полипропиленовой композиции. При этом композиция имеет показатель текучести расплава, (ПТР) составляющий по меньшей мере от 1,0 до 5,0 г/10 мин, прочность расплава F30 - не менее 30 сН, определенную в испытании Rheotens при 200°C, и растяжимость расплава v30 - менее 200 м/с, определенную в испытании Rheotens при 200°C. Способ получения композиции включает получение промежуточного полипропилена, имеющего ПТРв количестве от 0,5 до 2,5 г/10 мин, в присутствии асимметрического катализатора. После чего промежуточный полипропилен смешивают с пероксидом и по меньшей мере с ...

ПОЛИМЕРНАЯ КОМПОЗИЦИЯ ДЛЯ СШИТЫХ ИЗДЕЛИЙ

Изобретение относится к способу получения сшитого изделия. Способ включает стадию полимеризации этилена, необязательно, с одним или более альфа-олефиновым(и) сомономером(ами) в присутствии катализатора Циглера-Натта, формование из указанного полимера изделия и его последующее сшивание. При этом полученный на стадии полимеризации полимер этилена содержит двойные связи углерод-углерод/1000 атомов углерода в диапазоне от более чем 0,2 до менее 5,0 двойных связей, характеризуется молекулярно-массовым распределением (MWD) в диапазоне от 3,3 до 15 и не содержит длинноцепочечных разветвлений. Указанный полимер выбирают из каучуков (РОЕ), термопластов (POP) или сополимеров этилена очень низкой плотности (VLDPE), которые имеют диапазон плотности от 855 до 909 кг/м, или линейных сополимеров этилена низкой плотности (LLDPE) с плотностью от 910 до 930 кг/м, или сополимеров этилена средней плотности (MDPE) с плотностью от 931 до 945 кг/м. Полученные сшитые изделия имеют хорошие механические свойства ...

ГИДРОФОБНО МОДИФИЦИРОВАННЫЕ ПОЛИАМИНОВЫЕ ИНГИБИТОРЫ ОБРАЗОВАНИЯ НАКИПИ

Изобретение относится к полиаминам и способам их применения для противонакипной обработки в промышленных технологических потоках. Предложена композиция для уменьшения или устранения накипи в промышленном процессе, включающая полимерный продукт, полученный путем реакции полиамина, первого химически активного в отношении азота соединения и второго химически активного в отношении азота соединения. Предложены также способ уменьшения или устранения накипи в промышленном процессе путем добавления в указанный процесс данной композиции и способ противонакипной обработки в технологическом потоке. Технический результат - предложенная композиция повышает эффективность производства, так как позволяет проводить удаление накипи с труднодоступных поверхностей технологического оборудования без остановки производственного процесса. 3 н. и 13 з.п. ф-лы, 13 табл., 156 пр.

ИОНОМЕРНЫЙ БУТИЛЬНЫЙ КАУЧУК, ВУЛКАНИЗИРОВАННОЕ ПЕРОКСИДОМ ИЗДЕЛИЕ ИЗ НЕГО И ИЗДЕЛИЕ, ВКЛЮЧАЮЩЕЕ СУБСТРАТ, СВЯЗАННЫЙ С НАЗВАННЫМ КАУЧУКОМ

Изобретение имеет отношение к иономеру на основе бутильного каучука, вулканизированному пероксидами изделию, полученному из иономера на основе бутильного каучука, а также к изделию, включающему субстрат, содержащий материал из нержавеющей стали, стеклянный материал или материал из майлара, и связанный с ним иономер на основе бутильного каучука. Иономер включает повторяющиеся структурные единицы на основе, по меньшей мере, одного изоолефинового мономера, по меньшей мере, 0,5 мол.% повторяющихся структурных единиц на основе, по меньшей мере, одного олефинового мономера с несколькими непредельными связями, по меньшей мере, 0,5 мол.% повторяющихся структурных единиц на основе аллильного галогенида и, по меньшей мере, 0,5 мол.% иономерной части на основе продукта взаимодействия аллильного галогенида и нуклеофила на основе азота или фосфора формулы ! , где А означает атом азота или фосфора и R1, R2 и R3 выбраны из группы, состоящей из линейных или разветвленных алкильных заместителей с числом ...

ТРИАЛКИЛСИЛИЛОКСИ-ТЕРМИНИРОВАННЫЕ ПОЛИМЕРЫ

Настоящее изобретение относится к полимерам, содержащим функциональные концевые группы, и их получению. Способ включает процесс анионной полимеризации в растворе, в котором одну или несколько бис(триалкилсилил)перекисей (функционализирующие реагенты) общей формулы (II)где R, R, Rмогут быть одинаковыми или различными и означают алкил, циклоалкил или аралкил, которые могут содержать гетероатомы, такие как О, N, S, Si, в виде чистого вещества, раствора или суспензии добавляют к полимерам с реакционноспособными концами полимерных цепей, выбранным из группы полибутадиена, полиизопрена, сополимера бутадиена и изопрена, сополимера бутадиена и стирола, сополимера изопрена и стирола или тройного полимера бутадиена, изопрена и стирола. Технический результат - разработка полимеров с функциональными концевыми группами подходящего стерического экранирования для получения гидрокси-терминальных полимеров. 4 з.п. ф-лы, 2 табл., 2 пр.

СПОСОБ ПОЛУЧЕНИЯ БЛОК-СОПОЛИМЕРОВ ДЛЯ КОМПОЗИЦИЙ ДЛЯ ПРОТЕКТОРА ПНЕВМАТИЧЕСКОЙ ШИНЫ И УКАЗАННЫЕ СОПОЛИМЕРЫ

Настоящее изобретение относится к способу получения функционализированного, связанного или звездообразного блок-сополимера, используемого в каучуковой композиции, сшиваемой серой и обладающей пониженным гистерезисом в сшитом состоянии. Описан способ получения функционализированного, связанного или звездообразного блок-сополимера, используемого в каучуковой композиции, сшиваемой серой, содержащей сажу и обладающей пониженным гистерезисом в сшитом состоянии, причем по меньшей мере один из указанных блоков состоит из полиизопрена и по меньшей мере другой блок состоит из диенового эластомера, отличного от полиизопрена, мольное содержание звеньев одного или нескольких сопряженных диенов которого превышает 15%, отличающийся тем, что указанный способ включает: (i) сополимеризацию одного или нескольких мономеров, содержащих по меньшей мере один сопряженный диен, отличный от изопрена, с помощью каталитической системы, содержащей углеводородный растворитель, галогенирование или негалогенированное ...

ГИДРОКСИАРИЛФУНКЦИОНАЛИЗОВАННЫЕ ПОЛИМЕРЫ

Изобретение относится к способу получения полимера, включающему по меньшей мере одно функционализующее звено и один или несколько типов полиеновых мономерных фрагментов. Указанный способ включает а) получение раствора, содержащего (1) один или более типов этиленненасыщенных мономеров, включающих по меньшей мере один тип полиена, и (2) инициирующее соединение, и b) обеспечение анионного инициирования для получения карбанионного полимера, имеющего среднечисленную молекулярную массу в диапазоне от 75000 до 150000 Да. Указанное инициирующее соединение описывается общей формулой RZQ-М, где М представляет собой атом щелочного металла, Rпредставляет собой замещенную или незамещенную арильную группу, содержащую по меньшей мере одну группу OR, где каждый Rпредставляет собой группу, которая является нереакционно-способной по отношению к М и способной гидролизоваться, Z представляет собой одинарную связь или замещенную или незамещенную циклическую алкиленовую, ациклическую алкиленовую или ариленовую ...

НОВАЯ ПОЛИВИНИЛСУЛЬФОНОВАЯ КИСЛОТА, ЕЕ ПРИМЕНЕНИЕ И СПОСОБ ЕЕ ПОЛУЧЕНИЯ

Изобретение относится к поливинилсульфоновой кислоте, используемой в качестве легирующей высокомолекулярной добавки, к способу получения поливинилсульфоновой кислоты, к композиту, к вариантам дисперсии, к вариантам способа получения дисперсии, а также к вариантам электропроводного слоя. Поливинилсульфоновая кислота включает звенья винилсульфоновой кислоты общей формулы:где R, Rи R, Z представляют собой атом водорода. При этом молярное количество сульфокислотных групп, образованных мономерной винилсульфоновой кислотой, относительно общего молярного количества мономерных звеньев составляет от 50,0 до 98,0 моль. %. Поливинилсульфоновая кислота имеет оптическую плотность от 0,1 до 2,0 (водный раствор, 0,2 масс. %, длина ячейки 10 мм) в диапазоне длин волн от 255 до 800 нм. Способ получения поливинилсульфоновой кислоты заключается в том, что проводят полимеризацию мономерной винилсульфоновой кислоты общей формулы:где R, Rи R, Z представляют собой атом водорода. Затем нагревают полученную поливинилсульфоновую ...

ГИДРОФОБНО МОДИФИЦИРОВАННЫЕ ПОЛИАМИНОВЫЕ ИНГИБИТОРЫ ОБРАЗОВАНИЯ НАКИПИ

Изобретение относится к полиаминам и способам их применения для противонакипной обработки в различных промышленных технологических потоках. Предложены гидрофобно модифицированные кремнийсодержащие полиамины, включающие повторяющиеся структурные звенья двух типов, композиция на их основе и способ уменьшения или устранения накипи в промышленном процессе, включающий добавление в технологический поток заявленного полимера или композиции. Технический результат - предложенные гидрофобно модифицированные кремнийсодержащие полиамины пригодны для обработки алюмосиликатной накипи в трудноочищаемых промышленных технологических потоках, таких как технологические потоки в способе Байера по извлечению глинозема из бокситов, потоки радиоактивных отходов и вытекающие потоки, образующиеся при производстве крафт-бумаги. 4 н. и 26 з.п. ф-лы, 14 табл., 156 пр.

СПОСОБ И ПРОДУКТЫ ДЛЯ АБСОРБЦИИ МАСЛА И ОРГАНИЧЕСКИХ РАСТВОРИТЕЛЕЙ ИЗ ВОДЫ И МОРЯ

Изобретение относится к способу получения полимерных продуктов, которые после специальной поперечной сшивки становятся макроплегматическими (макросетчатыми - прим. пер. ) и приобретают способность абсорбировать органические растворители, бензин, нефть и продукты, которые сбрасывают в водоемы или в море, в количестве 40-80 г маслянистого вещества/г полимеров. Способ включает поперечную сшивку полистирола, тройного сополимера стирола, этилена и бутадиена SEBS и гидрированных до насыщения эластомеров SBR с 10, 20 и 40% стирола, которые после специальной поперечной сшивки в хлорированных растворителях со сшивающим агентом 1,4-дихлорметил-2, 5-диметилбензолом (DCMDMB) и с катализатором тетрахлоридом титана (TiCl4) и при 60oС образуют густую поперечно сшитую массу, которую режут в измельчителе, растворитель удаляют и полимерные продукты дезодорируют путем нагревания до 170oС с перемешиванием под вакуумом. Продукты, полученные данным способом, имеют высокую абсорбционную способность, а следовательно ...

СПОСОБ ЗАПИСИ ИНФОРМАЦИИ НА ПОЛИМЕРАХ

Изобретение относится к записи информации на полимерах, которое может быть использовано в микроэлектронике, оптоэлектронике, при получении микрофиш, в картографии, для создания рисунков на полимерных изделиях и т.д. Способ включает локальную термообработку полимера при температуре не ниже температуры стеклования полимера. В качестве полимера используют полимерное изделие вытянутой формы (пленку, волокно, ленту, трубку, стержень), изготовленное из пластифицированного или непластифицированного, аморфного или аморфно-кристаллического полимера, вначале при температуре ниже температуры стеклования полимера подвергнутое вытяжке в адсорбционно-активной жидкой среде, содержащей растворенный нетермохромный краситель, и высушенное при температуре ниже температуры стеклования полимера. Изобретение позволяет упростить способ записи информации на полимерах. 5 з.п. ф-лы.

ФУНКЦИОНАЛИЗИРОВАННЫЕ МУЛЬТИРАЗВЕТВЛЕННЫЕ ПОЛИМЕРЫ, ВКЛЮЧАЮЩИЕ ФУНКЦИОНАЛИЗИРОВАННЫЕ ПОЛИМЕРЫ, СИНТЕЗИРОВАННЫЕ АНИОННОЙ ПОЛИМЕРИЗАЦИЕЙ, И ИХ ПРИМЕНЕНИЕ

Изобретение относится к функционализированным мультиразветвленным полимерам, которые включают продукт реакции сшивающего агента и синтезируемого анионной полимеризацией и впоследствии гидролизованного полимера, процессу их синтеза и различным вариантам их применения. Структура полимеров по настоящему изобретению обеспечивает им улучшенные свойства в отношении их обработки, а также делает их пригодными для применения в термоплавких клеях. 8 н. и 8 з.п. ф-лы, 8 табл.

БЛОК-СОПОЛИМЕРЫ СОПРЯЖЕННЫХ ДИЕНОВ, СПОСОБ ИХ ПОЛУЧЕНИЯ И КОМПОЗИЦИЯ ПОКРЫТИЯ

Описывается способ получения блок-сополимеров сопряженных диенов, включающий стадии: а) получение предшествующего полимера полимеризацией по меньшей мере одного сопряженного диена с получением продукта, содержащего 1,2-двузамещенные, 1, 1-двузамещенные, 1,1,2-тризамещенные или четырезамещенные олефиновые двойные связи в полимере; b) эпоксидирование полимера - предшественника с образованием эпоксигрупп на местах замещения при количестве функциональных эпоксигрупп в полимере от 0,1 до 5,0 мэкв/г полимера, с) контактирование эпоксидированного полимера со спиртом, имеющим одну незамещенную гидроксигруппу, и либо с соединением общей формулы МХn, где М выбран из группы, включающей водород, бор, алюминий, железо и олово; Х является галогеном и n -целое число, соответствующее валентности М, или с его органическим комплексом. Описывается также сопряженный диеновый блок-сополимер, содержащий от 0,1 до 15 мэкв гидроксигрупп на 1 г полимера, спиртовые группы формул (I) или (II), в которых Р является ...

СПОСОБ ПОЛУЧЕНИЯ ВКУСОВОЙ ДОБАВКИ

Изобретение может быть использовано в пищевой промышленности, а именно при получении вкусовой добавки. Проводят ферментацию прогретых семян бобовых культур штаммами Bacillus subtilis или Bacillus natto. Готовят смесь, содержащую ферментированные семена, редуцирующий сахар и воду. Проводят реакцию при нагревании. Высушивают продукт реакции. Используют семена сои или рожкового дерева. Ферментацию ведут культурой, содержащей 5 • 107 - 109 микроорганизмов соответствующего штамма на 1 мл. Культуру вносят в количестве 0,5 - 2,0 об.%. Ферментацию ведут 1 - 7 дней при 30 - 45oC. Перед ферментацией добавляют углеводы, предпочтительно глюкозу и/или сахарозу от 0,5 до 5 вес.%. Ферментированные семена суспендируют в воде, содержащей 15 - 16 вес.% хлорида натрия. Реакцию проводят при нагревании 80 - 150oC. Высушивают до остаточного содержания воды не более 2%. 7 з.п.ф-лы, 1 табл.

ПОРОШКООБРАЗНЫЕ СШИТЫЕ ПОЛИМЕРЫ, АБСОРБИРУЮЩИЕ ПОД НАГРУЗКОЙ ВОДНЫЕ ЖИДКОСТИ, А ТАКЖЕ КРОВЬ, СПОСОБ ПОЛУЧЕНИЯ ТАКИХ ПОЛИМЕРОВ И ТЕКСТИЛЬНЫЕ КОНСТРУКЦИИ ДЛЯ ГИГИЕНЫ ТЕЛА

Порошкообразный сшитый абсорбирующий водные жидкости, а также кровь полимер(суперабсорбер), образованный из: а) 55,0-99,9 мас.% полимеризованных ненасыщенных способных к полимеризации, содержащих кислотные группы мономеров, которые по меньшей мере на 25 мол.% нейтрализованы; б) 0-40 мас.% полимеризованных ненасыщенных способных к сополимеризации с а) мономеров; в) 0,1-5,0 мас.% агента сшивки; г) 0-30 мас.% водорастворимого полимера, причем массовые количества а)-г) рассчитаны на безводный полимер, характеризуется тем, что 100 частей вышеописанного полимера, взятого в виде частиц, смешивают с водным раствором самое большее на 10 частей по меньшей мере 10%-ной фосфорной кислоты и а) 0,05-0,3 частей соединения, которое может реагировать по меньшей мере с двумя карбоксильными группами и не содержит никакой образующей щелочную соль группы в молекуле; и/или б) 0,05-1 части соединения, которое может реагировать по меньшей мере с двумя карбоксильными группами и содержит одну образующую щелочную ...

СПОСОБ ПОЛУЧЕНИЯ ПОЛИМЕРА С ФУНКЦИОНАЛЬНЫМИ ГРУППАМИ, СПОСОБНЫМИ СШИВАТЬ УКАЗАННЫЙ ПОЛИМЕР

Использование: синтез полимера для ускорения флокуляции, загущения дисперсий суспендированных твердых веществ. Сущность изобретения: смешивание водного раствора, по крайней мере, одного мономера, способного образовать водорастворимый полимер, по крайней мере, одного химического реагента, содержащего функциональные группы, маслянного раствора, с получением обратной эмульсии или микроэмульсии. Последующая обработка полученной эмульсии в условиях полимеризации мономеров и взаимодействие с химическим реагентом, содержащим функциональную группу, с получнием эмульсии водорастворимого полимера, содержащего функциональные группы, имеющего мицеллы диаметром . 6 з. п. ф-лы, 3 табл.

БЕНЗОИЛОКСИПОЛИ- α -АЛКЕНИЛФЕНОЛЫ В КАЧЕСТВЕ ПРОМЕЖУТОЧНЫХ ПРОДУКТОВ ДЛЯ СИНТЕЗА 1-(4-МЕТИЛ-5,6-ДИГИДРО-2Н-ПИРАНИЛ-5-ОКСИ)-БЕНЗОИЛОКСИПОЛИ- a -АЛКЕНИЛБЕНЗОЛОВ КАК МОДИФИКАТОРОВ ПОЛИВИНИЛХЛОРИДА

Использование: в химии и технологии полимеров для производства стабилизаторов поливинилхлорида. Сущность изобретения: синтезируют бензоилоксиполи- a -алкенилфенолы общей формулы R1 (HO)C6H3R2, где R1=(- OCOC6H5), l + m = n - 1, n = 33, или n = 19, которые применяют в качестве промежуточных продуктов для синтеза i-(4-метил-5,6-ди/гидро-2н-пиранил-5-окси) бензоилоксиполи- α -алкенилбензолов-модификаторов поливинилхлорида. 3 табл.

ЭПОКСИДИРОВАННЫЙ ДИЕНОВЫЙ БЛОКСОПОЛИМЕР

Использование: композиции различного назначения, содержащие в качестве компонента сшитый эпоксидированный диеновый блок-сополимер. Сущность изобретения: сшитый эпоксидированный диеновый блок-сополимер получают на основе исходного блок-сополимера, который может иметь две разные структурные формулы. Исходные полимеры содержат блоки диенового полимера мол. м. 300-200000, блоки моноалкенилароматического полимера мол. м. 500-50000, в состав макромолекулы может входить агент сочетания или мономеры сочетания. Исходный блок-сополимер гидрируют до содержания в нем 0,1-5 мэкв алифатических двойных связей на 1 г полимера, затем эпоксидируют до содержания эпокси-групп в полимере 0,1-3 мэкв на 1 г полимера, затем осуществляют химическое сшивание или сшивание под воздействием облучения до содержания геля не менее 30 %. 2 з.п. ф-лы, 21 табл.

СПОСОБ ПОЛУЧЕНИЯ ХЛОРИРОВАННЫХ 1,2-ПОЛИБУТАДИЕНОВ

Изобретение имеет отношение к способу получения хлорированных 1,2-полибутадиенов. Способ заключается во взаимодействии раствора полимера в органическом растворителе с хлорирующим агентом. В качестве хлорирующего агента используют водный раствор гипохлорита натрия концентрацией 0,05-0,2 моль/л. Взаимодействие проводят при мольном соотношении 1,2-ПБ: гипохлорит натрия=1:1-2,5 при температуре от минус 10 до 30°С в течение 1-5 часов при показателе рН реакционной среды 4-6, поддерживаемой путем использования буферной системы, состоящей из смеси фосфорной кислоты и гидрофосфата натрия в виде 0,3 М водного раствора. Технический результат - высокий уровень безопасности процесса хлорирования за счет использования гипохлорита натрия. 1 з.п. ф-лы, 1 табл., 22 пр.

РАДИАЛЬНЫЕ ИЛИ ЗВЕЗДООБРАЗНЫЕ БЛОКСОПОЛИМЕРЫ И КОМПОЗИЦИЯ КЛЕЕВ И ГЕРМЕТИКОВ

Описываются радиальные или звездообразные асимметричные блоксополимеры формулы I ((UD)y-A-HD)x-Y-(UD)z, где А - блок винилового ароматического углеводорода, имеющий молекулярную массу 4000 - 20000; НD - гидрированный диеновый блок с сопряженными двойными связями, имеющий молекулярную массу 10000 - 100000, У - многофункциональный сочетающий агент; UD - негидрированный диеновый блок с сопряженными двойными связями, имеющий молекулярную массу 1000 - 80000, х - целое число 2 - 20; у - 0 или 1; Z -целое число 0 - 10, (z + y) варьирует в пределах 1 -11; (х + z) варьирует в пределах 3 - 30, и их производные, содержащие полярные группы, которые увеличивают адгезию. Описывается также композиция клеев и герметиков. Технический результат - улучшение характеристик композиции. 2 с. и 5 з.п. ф-лы, 9 табл.

ОКИСЛИТЕЛЬНАЯ ОБРАБОТКА РЕЦИРКУЛИРУЮЩЕГО ПОТОКА ПРИ ПОЛУЧЕНИИ УКСУСНОЙ КИСЛОТЫ КАРБОНИЛИРОВАНИЕМ МЕТАНОЛА

... 1. Способ получения уксусной кислоты каталитическим карбонилированием метанола монооксидом углерода в системе, включающей секцию реакции и секцию очистки, включающий стадии: (a) получения потока, содержащего уксусную кислоту и ацетальдегид; (b) снижения содержания ацетальдегида, по меньшей мере, в части потока путем обработки, по меньшей мере, части потока окислителем; и (c) направления, по меньшей мере, части обработанного потока в часть системы, выбранной из группы, состоящей из секции реакции, секции очистки и обеих секций реакции и очистки. 2. Способ по п.1, в котором обработку окислителем осуществляют при температуре в интервале от примерно 15 до примерно 250°C и давлении в интервале от примерно 1 до примерно 70 бар. 3. Способ по п.2, в котором окислитель выбирают из группы, состоящей из кислорода, воздуха и их смесей. 4. Способ по п.2, в котором окислителем является пероксид. 5. Способ по п.4, в котором пероксид выбран из группы, включающей перуксусную кислоту, пероксид водорода и ...

ГАЛОГЕНИРОВАННЫЕ ЭЛАСТОМЕРНЫЕ КОМПОЗИЦИИ, ОБЛАДАЮЩИЕ ПОВЫШЕННОЙ ВЯЗКОСТЬЮ

... 1. Композиция, включающая по меньшей мере один изоолефиновый сополимер, включающий звено, дериватизированное из галометилстирола, смешанный с по меньшей мере одним затрудненным аминовым или фосфиновым соединением, обладающим соответствующим строением R1R2R3 N или R1R2R3P, где R1 обозначает Н или алкил с C1 по С6, R2 обозначает алкил с C1 по С30, а R3 обозначает алкил с С4 по С30 и, кроме того, где R3 обозначает более высший алкил, чем R1, причем смешение осуществляют при температуре, которая превышает температуру плавления указанного затрудненного аминового или фосфинового соединения, причем вязкость этой композиции при 220°С и скорости сдвига 100 1/с превышает 1300 Па·с или превышает 200 Па·с при 220°С и скорости сдвига 1000 1/с (как это определяют по стандарту ASTM D 1646). 2. Композиция по п.1, где R3 обозначает алкил с С10 по С20. 3. Композиция по п.1, в которой затрудненное соединение представляет собой третичный амин и где R3 обозначает алкил с С10 по С20. 4. Композиция по п.3, где ...

СПОСОБ ПОЛУЧЕНИЯ 2,6-ДИ-ТРЕТ-БУТИЛ-П-БЕНЗОХИНОНА

СПОСОБ ПОЛУЧЕНИЯ ПОЛИАЛЛИЛАМИНА

Настоящее изобретение относится к синтезу полиаллиламина. Описан способ получения полиаллиламина реакцией взаимодействия амида поливинилуксусной кислоты со смесью гипохлорита натрия и гидроксида натрия при их мольном соотношении амид поливинилуксусной кислоты : гипохлорит натрия : гидроксид натрия соответственно 1:1.13:1.05 при температуре 40-80°C в течение 6-8 часов. Технический результат - упрощение и ускорение способа получения полиаллиламина. 6 пр.

ПОДОБРАННЫЕ ЭЛАСТОМЕРНЫЕ СМЕСИ И ИХ ПРИМЕНЕНИЕ В ИЗДЕЛИЯХ

... 1. Смесь, включающая по меньшей мере один галоидированный статистический сополимер изобутилена и метилстирола, где по меньшей мере один галоидированный статистический сополимер включает по меньшей мере 9,0 мас.% параметилстирола в пересчете на массу по меньшей мере одного галоидированного статистического сополимера, и по меньшей мере один каучук общего назначения; которая включает от 70 до 97 ч./100 по меньшей мере одного галоидированного статистического сополимера и от 30 до 3 ч./100 по меньшей мере одного каучука общего назначения. 2. Смесь по п.1, в которой по меньшей мере один галоидированный статистический сополимер включает по меньшей мере 9,5 мас.% параметилстирола в пересчете на массу по меньшей мере одного галоидированного статистического сополимера. 3. Смесь по п.1, в которой по меньшей мере один галоидированный статистический сополимер галоидируют хлором или бромом. 4. Смесь по п.3, в которой по меньшей мере один галоидированный статистический сополимер включает от 0,1 до 5 мас ...

Полимеры на основе винилциклогексана

... 1. Полимеры винилциклогексана с абсолютной молекулярной массой Mw от 100000 до 450000 г/мол или их смесь с низкомолекулярным компонентом с абсолютной молекулярной массой от 1000 до менее, чем 100000 г/мол, причем молекулярно-массовое распределение характеризуется индексом полидисперсности от 1 до 3, а вязкость расплава, измеренная при 300°С и скорости сдвига 1000 с-1, составляет максимально 1000 Па·с. 2. Полимеры по п.1, содержащие в качестве полимера на основе винилциклогексана полимер с повторяющимся структурным звеном формулы (1): где R1 и R2, независимо друг от друга, обозначают водород или алкил с 1-6 атомами углерода, R3 и R4, независимо друг от друга, обозначают водород, алкил с 1-6 атомами углерода или вместе друг с другом обозначают алкилен, R5 обозначает водород или алкил с 1-6 атомами углерода и, возможно, содержащие, по меньшей мере, один сомономер, выбранный из группы, состоящей из олефинов с 2-10 атомами углерода, алкиловых эфиров акриловой кислоты, содержащих в алкиле 1-4 ...

УСТОЙЧИВЫЙ К ОКИСЛЕНИЮ ВЫСОКОСШИТЫЙ СВЕРХВЫСОКОМОЛЕКУЛЯРНЫЙ ПОЛИЭТИЛЕН

... 1. Способ получения устойчивого к окислению материала СВМПЭ (сверхвысокомолекулярного полиэтилена), включающий этапы ! смешивания количества антиоксиданта и/или акцептора радикалов в качестве добавки с порошком СВМПЭ; ! отливка смеси порошка СВМПЭ и добавки с целью получения заготовки под действием температуры выше точки плавления порошка СВМПЭ; ! облучение заготовки гамма-излучением или электронным пучком на воздухе при обычных атмосферных условиях дозой от 2 до 20 Мрад; где ! облученная заготовка с добавкой имеет окислительный индекс после искусственного старения такой же или ниже, чем таковой стерилизованного гамма-лучами стандартного материала СВМПЭ. ! 2. Способ по п.1, где облученная заготовка с добавкой содержит больше свободных радикалов, чем стерилизованный гамма-лучами стандартный материал СВМПЭ. ! 3. Способ по п.1 или 2, где этап облучения заготовки увеличивает степень сшивки заготовки таким образом, что облученный материал имеет молекулярную массу между поперечными связями ниже ...

АРОМАТИЧЕСКИЙ КАРБОНАТ, СПОСОБ ЕГО ПОЛУЧЕНИЯ И ПОЛИКАРБОНАТ, ПОЛУЧЕННЫЙ С ЕГО ИСПОЛЬЗОВАНИЕМ

... 1. Способ получения ароматическрого карбоната из диалкилкарбоната, включающий:реакцию ароматического гидроксильного соединения с диалкилкарбонатом в присутствии по меньшей мере одного типа самариевого катализатора, представленного формулой 1 или 2[Формула 1]SmX,где Х представляет собой группу С1-С10алкокси, алкилфенокси или фенокси.[Формула 2]где R1 и R2 независимо представляют собой, соответственно, водород и С1-С6алкильную группу.2. Способ по п.1, где катализатор используют в количестве от примерно 1·10до примерно 5·10на 1 моль диалкилкарбоната.3. Способ по п.1, где реакцию осуществляют при температуре от примерно 100 до примерно 280°С.4. Способ по п.1, где реакцию осуществляют в реакторе, заполненном молекулярным ситом.5. Способ по п.1, где ароматическое гидроксильное соединение представлено формулой 3:[Формула 3]Ar-ОН,где Ar представляет собой замещенную или незамещенную арильную группу.6. Способ по п.1, где диалкилкарбонат представлен формулой 4:[Формула 4]где Rи Rпредставляют собой ...

СПОСОБ ПОЛУЧЕНИЯ ВКУСОВОЙ ДОБАВКИ

Изобретение касается способа получения вкусовой добавки, включающего стадии ферментации прогретых семян бобовых культур штаммами Bacillus subtilis или Bacillus natto, приготовления смеси, содержащей ферментированные семена, редуцирующий сахар и воду, проведения реакции при нагревании и высушивания продукта реакции.

МНОГОФУНКЦИОНАЛЬНЫЙ НИЗКОМОЛЕКУЛЯРНЫЙ ПОЛИМЕР С МНОГОКРАТНО ПРИВИТЫМ МОНОМЕРОМ

... 1. Многофункциональный низкомолекулярный полимер с многократно привитым мономером, включающий привитый низкомолекулярный полимер, содержащий:(a) по меньшей мере один низкомолекулярный полимер, имеющий прививаемые участки и средневесовой молекулярный вес в диапазоне приблизительно от 500 приблизительно до 9950;(b) по меньшей мере один этиленненасыщенный, алифатический или ароматический мономер, имеющий от 2 приблизительно до 50 атомов углерода и содержащий по меньшей мере один из элементов - азот и кислород;(c) по меньшей мере один связующий агент, выбираемый из группы, состоящей из ацилирующих агентов и эпоксидов, и имеющий по меньшей мере два участка связывания компонентов; и(d) по меньшей мере один амин, способный вступать в реакцию со связующей группой на основной цепи вышеуказанного полимера, образованной в результате реакции между связующим агентом и вышеупомянутым полимером.2. Многофункциональный низкомолекулярный полимер с многократно привитым мономером по пункту 1, в котором низкомолекулярный ...

ГИДРОКСИАРИЛФУНКЦИОНАЛИЗОВАННЫЕ ПОЛИМЕРЫ

... 1. Способ получения полимера, который включает по меньшей мере одно функционализующее звено и один или несколько типов полиеновых мономерных фрагментов, при этом упомянутый способ включает:a) получение раствора, который содержит(1) один или более типов этиленненасыщенных мономеров, которые включают, по меньшей мере, один тип полиена, и(2) инициирующее соединение, которое описывается общей формулой RZQ-M, где М представляет собой атом щелочного металла, Rпредставляет собой замещенную или незамещенную арильную группу, содержащую по меньшей мере один заместитель OR, где каждый Rпредставляет собой группу, которая является нереакционно-способной по отношению к М и способной гидролизоваться, Z представляет собой одинарную связь или замещенную или незамещенную циклическую алкиленовую, ациклическую алкиленовую или ариленовую группу, a Q представляет собой группу, связанную с М через атом С, N или Sn; иb) обеспечение анионного инициирования упомянутым инициирующим соединением полимеризации упомянутых ...

ГАЛОГЕНИРОВАННЫЕ ЭЛАСТОМЕРНЫЕ КОМПОЗИЦИИ, ОБЛАДАЮЩИЕ ПОВЫШЕННЫМИ СТАБИЛЬНОСТЬЮ И ПРОЧНОСТЬЮ ДО ОБРАБОТКИ

... 1. Композиция, включающая: по меньшей мере один изоолефиновый сополимер, включающий звено, дериватизированное из галометилетирола, изоолефиновое звено, содержащее в пределах от 4 до 7 углеродных атомов, и сополимер, включающий от 0,5 до 20 мас.% галометилстирольных звеньев; и аминовое соединение, отвечающее формуле (R1R2R3)N, в которой R1 обозначает либо водородный атом, либо гидрокарбильную группу с C4 по С30, R2 обозначает либо водородный атом, либо гидрокарбильную группу с C1 по С30 и R3 обозначает либо водородный атом, либо гидрокарбильную группу с C1 по С30 при условии, что по меньшей мере один из R1,R2, и R3не обозначает водородный атом. 2. Композиция по п.1, где эта композиция также включает дополнительный каучуковый компонент, выбранный из бутилкаучука, галогенированного бутилкаучука, звездообразного бутилкаучука, галогенированного звездообразного бутилкаучука, изобутиленового гомополимера, бутадиенового каучука, хлоропренового, бутадиен-нитрильного каучуков, этилен-пропилен-диеновых ...

Способ получения ацеталей поливинилового алкоголя

Способ предотвращения от биообрастания полимерных гидрогелей и изделий из них

Изобретение относится к химии и технологии полимеров и может быть использовано в биотехнологии и медицине. Целью изобретения является повышение времени хранения гидрогелей и изделий из них без биообрастания. Это достигается обработкой полимерных гидрогелей и изделий из них консервирующим раствором следующего состава, мас.%: хлорид калия 0,07-0,08; дигидрат хлорида кальция 0,04-0,05; хлорид магния 0,01-0,02; хлорид натрия 0,80-0,90; тригидрат ацетата натрия 0,30-0,40; цитрат натрия 0,10-0.20; этилендиаминтетрааце- тат натрия 0,10-0,15; этанол 20,00-25,00; вода до 100,00 при объемном соотношении гидрогель: консервирующий раствор 1:2-5. 1 табл.

Способ получения водорастворимых полимерных полиэлектролитов

Сополимер акриламида и N[N-аллил-(D-глюкозил)аминометилакриламида, обладающий иммуностимулирующими свойствами

Изобретение относится к области химии полимеров и позволяет создать препарат, обладающий иммуностимулирующими свойствами с пониженной токсичностью /LD50= 2000 мкг/кг, коэффициент иммуностимуляции 1,27 - 1,75/, что достигается новой структурой вещества общей формулы @ , где X = 80 мол.%, Y = 20 мол.% с мол.м. 5.104. 1 табл.

Способ получения термореактивных смол и пластмасс

Способ стабилизации сополимера винилхлорида с акриловой кислотой

Способ получения ионообменных мембран

Способ получения полиакриламидина

Способ получения аминопропионатного комплексита

Способ получения комплексообразующих сорбентов

Способ получения окислительно-восстановительных полимеров

Способ получения привитого сополимера

Способ получения ненасыщенных полимеров

PROCESS FOR PRODUCING AMINOPOLYMERS

СПОСОБ ПОЛУЧЕНИЯ ПОЛИМЕРОВ

Способ получения полимерных краун-эфиров

СПОСОБ ПОЛУЧЕНИЯ ПОЛИМЕРНЫХ КРАУН-ЭФИРОВ взаимодействием хлорметилированного сополимера стирола и дивинилбензола с производными фенола при нагревании, отличающийся- тем, что, с целью упрощения способа, в качестве производных фенола используют соединения формулы где п 1-3, и взаимодействие осуществляют в присутствии сильноосновного анионита, в щелочной среде. (Л ...

Способ получения привитых сополимеров полиакрилонитрила

Способ получения краунсодержащего полимера

Изобретение относится к получению краунсодержащих полимеров, предназначенных для избирательного разделения ионов из раствора. Изобретение позволяет упростить процесс получения краунсодержащего полимера за счет взаимодействия 2-винилпиридина с 18-краун-6 в растворе ацетонитрила в присутствии 0,007-0,01% от массы полимера сульфата железа (II) и гидроперекиси третичного бутила при нагревании в течение 2 ч до температуры кипения ацетонитрила при молярном соотношении поли-2-винилпиридина, 18-краун-6-трифторуксусной кислоты и гидроперекиси трет-бутила 1:(1-10):(0,9-1,3):(0,1-5). 2 табл.

Способ получения ионита

Способ получения анионообменных материалов

Способ получения комплексообразующего ионита

Способ получения окислительно-восстановительных ионитов

Способ получения присадки для смазочных масел

Способ получения сополимеров стирола

Резиновая смесь на основе галоидированного бутилкаучука

Способ получения пленкообразующих веществ конденсационного типа

Способ получения битумного вяжущего

Способ хлорирования полиэтилена высокой плотности

Способ получения модифицированных полимеров

Способ модификации бромбутилкаучука

Vernetzte Schaumstrukturen von hauptsächlich linearen Polyolefinen und Verfahren zur Herstellung

PROTONLEITENDE POLYMERE

VERFAHREN ZUR HERSTELLUNG VON AMPHOTEREN IONENAUSTAUSCHERN MIT HYDROPHILER POLYMERER MATRIX

Expandierte Teilchen aus Polypropylenharz

VERFAHREN ZUR HERSTELLUNG VON CARBAMATEN

Ein modifizierter Polyvinylalkohol und ein Verfahren zur Modifikation von Polyvinylalkohol durch radikalisches Pfropfen im festen Zustand

POLYMERE, DIE GESÄTTIGTE ZYKLISCHE MOLEKULARSTRUKTUREINHEITEN ENTHALTEN

In-line Polymerisationsverfahren von olefinische Monomeren

VERFAHREN ZUR HERSTELLUNG VON AMINOALKYLENPHOSPHONSAEUREGRUPPEN AUFWEISENDEN IONENAUSTAUSCHERHARZEN

Bindemittelharz für eine thermische Übertragungsschicht und thermisches Übertragungsfarbstoffband

VERFAHREN ZUR HERSTELLUNG VON POLYMERGEBUNDENEN STABILISATOREN AUS NICHT POLYMERISIERBAREN STABILISATOREN.

FUNKTIONALISIERTE AETHYLENPOLYMERE, VERWENDUNG ZUR BESCHICHTUNG VON METALLEN UND VERFAHREN ZUR HERSTELLUNG DAVON.

VERFAHREN ZUR HERSTELLUNG VON POLYALKYLHYDROXYAROMATEN

ALKYLAMINOPHOSPHONIC CHELATING RESINS, THEIR PREPARATION AND USE IN PURIFYING BRINES

GRUNDIERMITTEL FÜR POLYOLEFINMATERIALIEN

Additionspolymerisationskatalysator mit eingeschränkter Geometrie, Verfahren zur Herstellung davon, Vorläufer dafür, Verfahren zur Verwendung und daraus hergestellte Polymere

VERFAHREN ZUR ISOMERISIERUNG VON ISOLIERTEN ZU KONJUGIERTEN DOPPELBINDUNGEN IN HOMO- UND/ODER COPOLYMEREN VON 1,3- DIENEN

A METHOD OF FORMING A POLYMER FILM

POLYMERE N-HALOGENAMIDE AUF BASIS VON ACRYL- UND METHACRYLAMID

ZUSAMMENSETZUNGEN, VERWENDBAR IN ZUSAMMENSETZUNGEN IN ODER ALS FILM, UEBERZUG, KITT, KLEBSTOFF UND DICHTUNGSMITTEL UND VERFAHREN ZU IHRER HERSTELLUNG.

RADIALE UND VERZWEIGTE BLOCKCOPOLYMERE, DIESE ENTHALTENDE ZUSAMMENSETZUNGEN, IHRE HERSTELLUNG UND IHRE VERWENDUNG IN BITUMINOESEN ZUSAMMENSETZUNGEN

Radial and branched block copolymers show a structure: wherein: Z is a radical deriving from a tetrafunctional coupling agent; A is a polystyrene block; B is a polybutadiene block m, n, P, g are either 1 or zero, with the @@condition that their sum is comprised within the range of from 1 to 4. Compositions of block copolymers comprise the hereinabove disclosed radial and branched block copolymers, blended with a two-block copolymer B-A, and an "A" homopolymer. The process for the preparation of said radial and branched block copolymers and of the related compositions is disclosed, and furthermore their use is disclosed in bituminous compositions, in order to improve the general characteristics ...

VERFAHREN ZUR HERSTELLUNG IMMOBILISIERTER ENZYMMISCHUNGEN

KUNSTSTOFF UND VERFAHREN ZU SEINER HERSTELLUNG

FUNKTIONALISIERTE POLYMERE UND VERFAHREN ZU DEREN HERSTELLUNG.

POLYMERE DIHYDROXYVERBINDUNGEN UND IHRE VERWENDUNG ALS STABILISATOREN FUER POLYMERE.

Aktivierte und konjugierte Polyaryl-Substrate

Feste, elastomere Blockcopolymerisate

Mischungen mit erhöhtem Modul erhalten durch Einbringen von teilchenförmigem Gummi

VERFAHREN ZUR ZERSETZUNG HALOGENIERTER ORGANISCHER VERBINDUNGEN

POLYMERISATION FÜR OLEFINISCHE MONOMERE UNTER VERWENDUNG VON ANIONISCHEN INITIATOREN

Self-aligned permanent on-chip interconnect structure formed by pitch splitting

A method of fabricating an interconnect structure is provided. The method includes forming a hybrid photo-patternable dielectric material atop a substrate. The hybrid photo-patternable dielectric material has dual-tone properties with a parabola like dissolution response to radiation. The hybrid photo-patternable dielectric material is then image-wise exposed to radiation such that a self-aligned pitch split pattern forms. A portion of the self-aligned split pattern is removed to provide a patterned hybrid photo-patternable dielectric material having at least one opening therein. The patterned hybrid photo-patternable dielectric material is then converted into a cured and patterned dielectric material having the at least one opening therein. The at least one opening within the cured and patterned dielectric material is then filed with at least an electrically conductive material. Also provided are a hybrid photo-patternable dielectric composition and an interconnect structure.

Resist polymer and resist composition

The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.

Photosensitive copolymer and photoresist composition

A copolymer has formula: wherein R 1 -R 5 are independently H, C 1-6 alkyl, or C 4-6 aryl, R 6 is a fluorinated or non-fluorinated C 5-30 acid decomposable group; each Ar is a monocyclic, polycyclic, or fused polycyclic C 6-20 aryl group; each R 7 and R 8 is —OR 11 or —C(CF 3 ) 2 OR 11 where each R 11 is H, a fluorinated or non-fluorinated C 5-30 acid decomposable group, or a combination; each R 9 is independently F, a C 1-10 alkyl, C 1-10 fluoroalkyl, C 1-10 alkoxy, or a C 1-10 fluoroalkoxy group; R 10 is a cation-bound C 10-40 photoacid generator-containing group, mole fractions a, b, and d are 0 to 0.80, c is 0.01 to 0.80, e is 0 to 0.50 provided where a, b, and d are 0, e is greater than 0, the sum a+b+c+d+e is 1, l and m are integers of 1 to 4, and n is an integer of 0 to 5. A photoresist and coated substrate, each include the copolymer.

Resist pattern forming process

A resist pattern is formed by coating a chemically amplified positive resist composition onto a substrate and prebaking to form a resist film, exposing to high-energy radiation, baking and developing with a developer to form a resist pattern, and heating the pattern for profile correction to such an extent that the line width may not undergo a change of at least 10%. An amount of a softening accelerator having a molecular weight of up to 800 is added to the resist composition comprising (A) a base resin, (B) an acid generator, (C) a nitrogen-containing compound, and (D) an organic solvent.

Self-aligned permanent on-chip interconnect structure formed by pitch splitting

A hybrid photo-patternable dielectric material is provided that has dual-tone properties with a parabola like dissolution response to radiation. In one embodiment, the hybrid photo-patternable dielectric material includes a composition of at least one positive-tone component including a positive-tone polymer, positive-tone copolymer, or blends of positive-tone polymers and/or positive-tone copolymers having one or more acid sensitive positive-tone functional groups; at least one negative-tone component including a negative-tone polymer, negative-tone copolymer, or blends of negative-tone polymers and/or negative-tone copolymers having one or more acid sensitive negative-tone functional groups; at least one photoacid generator; and at least one solvent that is compatible with the positive-tone and negative-tone components.

Resist film, resist coated mask blanks and method of forming resist pattern using the resist film, and chemical amplification type resist composition

A resist film formed by using a chemical amplification type resist composition containing (A) a high molecular compound having a structure wherein a hydrogen atom of a phenolic hydroxyl group is substituted by a group represented by the following general formula (I), (B) a compound generating an acid upon irradiation with actinic rays or radiation, and an organic solvent, and the film thickness is 10 to 200 nm. wherein, R 1 represents a hydrocarbon group, R 2 represents a hydrogen atom or a hydrocarbon group, and Ar represents an aryl group. R 1 may also bind to Ar to form a ring which may also contain a heteroatom. * represents a binding position with an oxygen atom of the phenolic hydroxyl group.

Patterning process and photoresist with a photodegradable base

A resist material and methods using the resist material are disclosed herein. An exemplary method includes forming a resist layer over a substrate, wherein the resist layer includes a polymer, a photoacid generator, an electron acceptor, and a photodegradable base; performing an exposure process that exposes portions of the resist layer with radiation, wherein the photodegradable base is depleted in the exposed portions of the resist layer during the exposure process; and performing an developing process on the resist layer.

Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the same

An actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a resin (P) which includes a repeating unit (A) having an ionic structural moiety which generates an acid anion by being decomposed due to irradiation with actinic rays or radiation, a repeating unit (B) having a proton acceptor moiety, and a repeating unit (C) having a group which generates an alkali soluble group by being decomposed by the action of an acid, and the resin (P) has at least one repeating unit which is represented by the general formulae (I) to (III) below as the repeating unit (A) (the reference numerals in the general formulae represent the meaning of the description in the scope of the claims and the specifications).

Fluorine-free fused ring heteroaromatic photoacid generators and resist compositions containing the same

The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

Fluorine-free fused ring heteroaromatic photoacid generators and resist compositions containing the same

The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

Radiation-sensitive resin composition

A radiation-sensitive resin composition includes a polymer and a photoacid generator. The polymer includes a first structural unit shown by a formula (a1), a second structural unit shown by a formula (a2), and a third structural unit having a lactone structure. A content of the first structural unit in the polymer being 50 mol % or more based on total structural units included in the polymer. The first structural unit is preferably a structural unit shown by a formula (a1-1).

LITHOGRAPHIC PRINTING PLATE PRECURSORS

Lithographic printing plate precursors can have an imageable layer that includes a polymeric binder having an acid number of at least 30 mg KOH/g of polymer to and including 150 mg KOH/g of polymer, at least 3 weight % of recurring units derived from one or more N-alkoxymethyl (alkyl)acrylamides or alkoxymethyl (alkyl)acrylates, at least 2 weight % of recurring units having pendant 1H-tetrazole groups, and at least 10 weight % of recurring units having pendant cyano groups. The use of such polymeric binders provides good bakeability and chemical solvent resistance, especially for positive-working precursors. 1. A lithographic printing plate precursor comprising a substrate and having an imageable layer disposed thereon , which imageable layer comprises an infrared radiation absorbing compound and a polymeric binder having an acid number of at least 30 mg KOH/g of polymer to and including 150 mg KOH/g of polymer , the polymeric binder comprising , in random order , at least 3 weight % of recurring units derived from one or more N-alkoxymethyl (alkyl)acrylamides or alkoxymethyl (alkyl)acrylates , at least 2 weight % of recurring units having pendant 1H-tetrazole groups , and at least 10 weight % of recurring units having pendant cyano groups.3. The printing plate precursor of wherein w is at least 3 weight % to and including 30 weight % claim 2 , x is at least 30 weight % to and including 70 weight % claim 2 , y is at least 10 weight % to and including 40 weight % claim 2 , and z is at least 15 weight % to and including 40 weight % claim 2 , all based on total polymeric binder weight.4. The printing plate precursor of wherein the N-alkoxymethyl (alkyl)acrylamides and the alkoxymethyl (alkyl)acrylates independently have alkoxy groups having 1 to 8 carbon atoms claim 1 , and alkyl groups that are methyl or ethyl groups.5. The printing plate precursor of wherein the polymeric binder is present in the imageable layer in an amount of from at least 40 weight % to and ...

Photosensitive Resin Composition And Cured Product Thereof

Disclosed is a photosensitive resin composition containing a cationic photopolymerization initiator (A) and an epoxy resin (B) having two or more epoxy groups in each molecule, which is characterized in that the cationic photopolymerization initiator (A) is a cationic photopolymerization initiator (A-1) that is represented by formula (1). 2. The photosensitive resin composition according to claim 1 , wherein the epoxy resin (B) has a softening point of not less than 40° C. and not more than 120° C. claim 1 , and an epoxy equivalent of 150 to 500/eq.4. The photosensitive resin composition according to any one of to claim 1 , wherein the photosensitive resin composition is used for a wafer level package.5. The photosensitive resin composition according to any one of to claim 1 , wherein the photosensitive resin composition is used as an adhesive layer for a substrate and an adherent.6. A dry film resist obtained by sandwiching the photosensitive resin composition according to any one of to with base materials.7. A cured product obtained by curing the photosensitive resin composition according to any one of to .8. A cured product obtained by curing the dry film resist according to . The present invention relates to a photosensitive resin composition that has high sensitivity and resolution and is useful for production of MEMS package parts and semiconductor package parts, particularly useful for production of small and highly air-tight package parts for surface packaging for a variety of mechanical rate sensors of acceleration, angular velocity, pressure, and the like, CMOS and CCD image sensors, optical and RF sensors, and temperature and humidity sensors, and production of MEMS (microelectromechanical system) parts, micromachine parts, microfluidic parts, μ-TAS (micro-total analysis system) parts, inkjet printer parts, microreactor parts, conductive layers, LIGA parts, molds for microinjection molding and thermal embossing or stamps for these, screens or stencils for ...

PRODUCTION METHOD OF POLYHYDROXYIMIDE AND POSITIVE PHOTOSENSITIVE RESIN COMPOSITION CONTAINING POLYHYDROXYIMIDE OBTAINED BY THE PRODUCTION METHOD

There is provided a simple production method of polyhydroxyimide and a positive photosensitive resin composition containing the polyhydroxyimide. A production method of a polyhydroxyimide comprising: adding an acid component that is at least one type of carboxylic acid having a pKa of 0 to 5 to a polyhydroxyimide precursor of Formula (1): 2. The production method of a polyhydroxyimide according claim 1 , to claim 1 , wherein Y is an organic group containing a benzene ring substituted with at least one OH group.3. The production method of a polyhydroxyimide according to claim 2 , wherein Y is an organic group containing two or more benzene rings substituted with at least one OH group.5. The production method of a polyhydroxyimide according to claim 4 , wherein Zto Zare a single bond claim 4 , —CH— claim 4 , —C(CH)— claim 4 , —C(CF)— claim 4 , —C(O)NH— claim 4 , —O— claim 4 , —S(O)— or —C(O)—.7. The production method of a polyhydroxyimide according o claim 6 , wherein the carboxylic acid of Formula (6) is a Caliphatic carboxylic acid.8. The production method of a polyhydroxyimide according to claim 7 , wherein in Formula (6) claim 7 , Rto Rare a hydrogen atom or a halogen atom.9. The production method of a polyhydroxyimide according to claim 8 , wherein the carboxylic acid of Formula (6) is acetic acid or trifluoroacetic acid.10. The production method of a polyhydroxyimide according to claim 1 , wherein the acid component is added in a mass 0.1 to 2 times the mass of the polyhydroxyimide precursor of Formula (1).11. The production method of a polyhydroxyimide according to claim 1 , wherein the heating temperature is 50 to 80° C.13. The production method of a polyhydroxymide according to claim 12 , wherein the organic group as A containing an aromatic group substituted with at least one OH group is an organic group containing a benzene ring substituted with at least one OH group.14. The production method of a poly hydroxyimide according to claim 13 , wherein the ...

Positive Photosensitive Resin Composition, Photosensitive Resin Film Prepared by Using the Same, and Semiconductor Device Including the Photosensitive Resin Film

Disclosed are a positive photosensitive resin composition that includes (A) a polybenzoxazole precursor including a first polybenzoxazole precursor including a repeating unit represented by the following Chemical Formula 1 and a repeating unit represented by the following Chemical Formula 2, and having a thermally polymerizable functional group at at least one of the terminal end; (B) a dissolution controlling agent including a novolac resin including a repeating unit represented by the following Chemical Formula 4; (C) a photosensitive diazoquinone compound; (D) a silane compound; (E) an acid generator; and (F) a solvent, a photosensitive resin film prepared using the same, and a semiconductor device including the photosensitive resin film.

PHOTOSENSITIVE RESIN COMPOSITION

A photosensitive resin composition including: (a) a polyamide acid; (b) a compound (b1) having 4 or more of a methylol group, a methoxymethyl group and the both thereof, or a compound (b2) represented by the following formula (2); and (c) a photopolymerization initiator. 3. The photosensitive resin composition according to wherein the component (b) is contained in an amount of 2 to 10 parts by mass relative to 100 parts by mass of the component (a).4. The photosensitive resin composition according to which is used for forming a protective layer or an insulating layer of a circuit formation substrate of a suspension of a hard disc drive.5. A cured film obtained by curing the photosensitive resin composition according to .6. A method for producing a cured film comprising the steps of:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'applying the photosensitive resin composition according to to a substrate, followed by drying to obtain a photosensitive resin film;'}exposing the photosensitive resin film to light, followed by developing, to obtain a patterned resin film; andheating the patterned resin film.7. A circuit formation substrate having the cured film obtained by the method according to as an insulating layer or a protective layer.8. The circuit formation substrate according to having a substrate claim 7 , an insulating layer claim 7 , a conductive layer and a protective layer in this sequence.9. A suspension of a hard disc drive having the circuit formation substrate according to . The invention relates to a photosensitive resin composition, a method for producing a cured film using the photosensitive resin composition and a circuit formation substrate having a cured film comprising the photosensitive resin composition.In recent years, in respect of an increase in memory capacity or an increase in processing speed or the like of a hard disc drive, as the magnetic head (hereinafter referred to as the “head”), a MR (magnet-resistive) thin film composite head in ...

Etch resistant alumina based coatings

Method of forming a protective hard mask layer on a substrate in a semiconductor etch process, comprising the step of applying by solution deposition on the substrate a solution or colloidal dispersion of an alumina polymer, said solution or dispersion being obtained by hydrolysis and condensation of monomers of at least one aluminium oxide precursor in a solvent or a solvent mixture in the presence of water and a catalyst. The invention can be used for making a hard mask in a TSV process to form a high aspect ratio via a structure on a semiconductor substrate.

Resist composition, method of forming resist pattern, and polymeric compound

A resist composition containing a base component (A) which generates acid upon exposure, and exhibits changed solubility in a developing solution under the action of acid, wherein the base component (A) contains a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-0) shown below and a structural unit (a6) that generates acid upon exposure. In the formula, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R 1 represents a sulfur atom or an oxygen atom, R 2 represents a single bond or a divalent linking group, and Y represents a hydrocarbon group in which a carbon atom or a hydrogen atom may be substituted with a substituent.

Positive photosensitive resin composition and uses thereof

The invention relates to a positive photosensitive resin composition with good temporal stability. The invention also provides a method for manufacturing a thin-film transistor array substrate, a thin-film transistor array substrate and a liquid crystal display device.

POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, METHOD OF CREATING RESIST PATTERN, AND ELECTRONIC COMPONENT

The positive-type photosensitive resin composition according to the present invention comprises an alkali-soluble resin having a phenolic hydroxyl group, a compound that produces an acid by light, a thermal crosslinking agent, and a silane compound having at least one functional group selected from an epoxy group and a sulfide group. 1. A positive-type photosensitive resin composition , comprising:an alkali-soluble resin having a phenolic hydroxyl group,a compound that produces an acid by light,a thermal crosslinking agent, anda silane compound having at least one functional group selected from an epoxy group and a sulfide group.4. The positive-type photosensitive resin composition according to claim 1 , wherein as the alkali-soluble resin claim 1 , the positive-type photosensitive resin composition contains a phenol resin.5. The positive-type photosensitive resin composition according to claim 1 , wherein as the alkali-soluble resin claim 1 , the positive-type photosensitive resin composition contains a first phenol resin that is a phenol resin having no phenolic hydroxyl group modified with an unsaturated hydrocarbon group-containing compound claim 1 , and a second phenol resin that is a modified phenol resin having a phenolic hydroxyl group modified with an unsaturated hydrocarbon group-containing compound.6. The positive-type photosensitive resin composition according to claim 5 , wherein the second phenol resin further has a phenolic hydroxyl group modified with a polybasic acid anhydride.7. The positive-type photosensitive resin composition according to claim 5 , wherein a content of the first phenol resin is 5 to 95% by mass based on a total of the content of the first phenol resin and a content of the second phenol resin.8. The positive-type photosensitive resin composition according to claim 1 , wherein the compound that produces an acid by light is an o-quinone diazide compound.9. The positive-type photosensitive resin composition according to claim 1 , ...

CYCLOALIPHATIC MONOMER, POLYMER COMPRISING THE SAME, AND PHOTORESIST COMPOSITION COMPRISING THE POLYMER

A monomer has the Formula I: 2. The monomer of claim 1 , wherein Ris H claim 1 , F claim 1 , methyl claim 1 , or trifluoromethyl.3. The monomer of claim 1 , wherein R claim 1 , R claim 1 , and Rare each independently Calkyl claim 1 , Cfluoroalkyl claim 1 , Calkoxy claim 1 , Cfluoroalkoxy claim 1 , Calkanol claim 1 , or a combination comprising at least one of the foregoing.4. The monomer of claim 1 , wherein R claim 1 , R claim 1 , and Rare each independently H claim 1 , methyl claim 1 , ethyl claim 1 , trifluoromethyl claim 1 , 2 claim 1 ,2 claim 1 ,2-trifluoroethyl claim 1 , 2-hydroxyethyl claim 1 , or a combination comprising at least one of the foregoing.5. The monomer of claim 1 , wherein m and n are independently 3 or 4 claim 1 , and x and y are independently an integer of from 0 to 2.6. The monomer of claim 1 , wherein Ris methyl or ethyl claim 1 , m and n are each 3 claim 1 , and x and y are each 0.7. The monomer of claim 1 , wherein A is —O—CH(C═O)—.8. A polymer claim 1 , comprising the monomer of .9. A photoresist composition claim 8 , comprising the polymer of and a photoacid generator.10. A coated substrate claim 9 , comprising: (a) a substrate having one or more layers to be patterned on a surface thereof; and (b) a layer of a photoresist composition of over the one or more layers to be patterned.11. A patterned layer claim 10 , formed by patternwise imaging the coated substrate of using actinic radiation at 193 nm. This application claims the benefit of U.S. Patent Application Ser. No. 61/582,345, filed Dec. 31, 2011, and U.S. patent application Ser. No. 13/711,175, filed Dec. 11, 2012, which are incorporated by reference herein in its entirety.Improved photolithographic technologies based on short wavelength radiation (e.g., as generated by an ArF excimer laser operating at 193 nm), or other such short wavelength sources, are useful in the pursuit of ever faster and more efficient semiconductor devices by increasing device density of an integrated ...

Photosensitive Novolac Resin, Positive Photosensitive Resin Composition Including Same, Photosensitive Resin Film Prepared by Using the Same, and Semiconductor Device Including the Photosensitive Resin Film

Disclosed is a photosensitive novolac resin including a structural unit represented by the following Chemical Formula 1 and structural unit represented by the following Chemical Formula 2, wherein R 11 , R 12 , R 13 , and R 14 in Chemical Formulae 1 and 2 are the same as defined in the detailed description, a positive photosensitive resin composition including the same, a photosensitive resin film fabricated using the same, and a semiconductor device including the photosensitive resin composition.

Photoresist pattern trimming methods

Provided are methods of trimming photoresist patterns. The methods involve coating a photoresist trimming composition over a photoresist pattern, wherein the trimming composition includes a matrix polymer, a thermal acid generator and a solvent, the trimming composition being free of cross-linking agents. The coated semiconductor substrate is heated to generate an acid in the trimming composition from the thermal acid generator, thereby causing a change in polarity of the matrix polymer in a surface region of the photoresist pattern. The photoresist pattern is contacted with a developing solution to remove the surface region of the photoresist pattern. The methods find particular applicability in the formation of very fine lithographic features in the manufacture of semiconductor devices.

Polymer, Resist Material Containing Same, and Method for Forming Pattern Using Same

A polymer containing a repeating unit represented by the following general formula (1) and a repeating unit having an acid-releasable group. 2. A polymer as claimed in claim 1 , further comprising a repeating unit having 1 claim 1 ,1 claim 1 ,1 claim 1 ,3 claim 1 ,3 claim 1 ,3-hexafluoro-2-hydroxyisopropyl group or a repeating unit having an adhesive group.4. A resist material comprising a polymer as claimed in .5. A resist material as claimed in claim 4 , further comprising at least one kind of an acid generator claim 4 , a basic compound and an organic solvent.6. A resist material as claimed in claim 5 , wherein a C-Calcohol-based solvent is used as the organic solvent.7. A pattern-forming method comprising:{'claim-ref': {'@idref': 'CLM-00004', 'claim 4'}, 'a first step of applying a resist material as claimed in to a substrate;'}a second step of subjecting the substrate to heat treatment to form a resist film and then exposing the resist film to an ultraviolet light or extreme ultraviolet light having a wavelength of 300 nm or less through a photomask by using an exposure apparatus; anda third step of carrying out development by dissolving an exposed portion of the resist film in a developing solution thereby forming a pattern in the substrate.8. A pattern-forming method as claimed in claim 7 , the method adopting immersion lithography where water is inserted between a wafer and a projection lens and an ultraviolet light is radiated from an ArF excimer laser of a wavelength of 193 nm in use of an exposure apparatus.9. A pattern-forming method according to double patterning where a first resist pattern is formed on a substrate and then a second resist pattern is formed on the first resist pattern claim 4 , wherein a resist material as claimed in is used.10. A pattern-forming method according to EUV lithography that uses an ultraviolet light having a wavelength of 13.5 nm claim 4 , wherein a resist material as claimed in is used. The present invention relates to: a ...

Method of forming resist pattern

A method of forming a resist pattern, including: step (1) in which a resist composition including a base component, a photobase generator component and an acid supply component is applied to a substrate to form a resist film; step (2) in which the resist film is subjected to exposure without being subjected to prebaking; step (3) in which baking is conducted after step (2), such that, at an exposed portion of the resist film, the base generated from the photobase generator component upon the exposure and an acid derived from the acid supply component are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the action of the acid derived from the acid supply component; and step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern.

POLYMERIZABLE TERTIARY ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS

The present invention provides a polymerizable tertiary ester compound represented by the following general formula (1a) or (1b). There is provided a polymerizable ester compound useful as a monomer for a base resin of a resist composition having a high resolution and a reduced pattern edge roughness in photolithography using a high-energy beam such as an ArF excimer laser light as a light source, especially in immersion lithography, a polymer containing a polymer of the ester compound, a resist composition containing the polymer as a base resin, and a patterning process using the resist composition. 2. The polymerizable tertiary ester compound according to claim 1 , wherein kin the general formula (1a) or (1b) is 1.3. The polymerizable tertiary ester compound according to claim 1 , wherein in the general formula (1a) claim 1 , any one or more of R claim 1 , R claim 1 , and Aa has a cyclic structure.4. The polymerizable tertiary ester compound according to claim 2 , wherein in the general formula (1a) claim 2 , any one or more of R claim 2 , R claim 2 , and Aa has a cyclic structure.6. The polymer according to claim 5 , wherein k in the general formula (2a) or (2b) is 1.7. The polymer according to claim 5 , wherein in the general formula (2a) claim 5 , any one or more of R claim 5 , R claim 5 , and Aa has a cyclic structure.8. The polymer according to claim 6 , wherein in the general formula (2a) claim 6 , any one or more of R claim 6 , R claim 6 , and Aa has a cyclic structure.21. A resist composition comprising the polymer of as a base resin.22. The resist composition according to claim 21 , comprising any one or more of an organic solvent and an acid generator.23. A patterning process comprising the steps of applying the resist composition of to a substrate; performing exposure to a high-energy beam or an electron beam through a photomask after heat treatment; and performing development with a developer.24. The patterning process according to claim 23 , wherein ...

MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS

A polymer is prepared from an adamantane methacrylate monomer whose alcoholic hydroxyl group is protected with an alicyclic-containing tertiary alkyl group. A photoresist composition comprising the polymer displays a high sensitivity and a high dissolution contrast during both alkaline development and organic solvent development. 3. The polymer of claim 2 , further comprising recurring units (b) of at least one type having a carboxyl group substituted with an acid labile group and/or recurring units (c) of at least one type derived from a monomer having an adhesive group selected from the class consisting of hydroxyl claim 2 , cyano claim 2 , carbonyl claim 2 , ester claim 2 , ether claim 2 , lactone claim 2 , carboxyl claim 2 , carboxylic anhydride claim 2 , sulfonic acid ester claim 2 , disulfone claim 2 , and carbonate groups.4. A resist composition comprising a base resin comprising the polymer of claim 2 , an acid generator claim 2 , and an organic solvent.5. A pattern forming process comprising the steps of applying a resist composition comprising a base resin comprising the polymer of claim 2 , an acid generator claim 2 , and an organic solvent onto a substrate claim 2 , prebaking the composition to form a resist film claim 2 , exposing the resist film to high-energy radiation to define exposed and unexposed regions claim 2 , baking claim 2 , and developing the exposed film in a developer to form a pattern.6. The process of wherein an alkaline aqueous solution is used as the developer in the developing step to form a positive pattern wherein the exposed region of film is dissolved and the unexposed region of film is not dissolved.7. The process of wherein an organic solvent is used as the developer in the developing step to form a negative pattern wherein the unexposed region of film is dissolved and the exposed region of film is not dissolved.8. The process of wherein the developer comprises at least one solvent selected from the group consisting of 2- ...

Resist composition and method of forming resist pattern

A resist composition including: a base component (A) that exhibits changed solubility in a developing solution by the action of acid; a photoreactive quencher (C); and an acid generator component (B) that generates acid upon exposure, wherein the photoreactive quencher (C) contains a compound (C) represented by general formula (c1) shown below. In the formula, X represents a cyclic group of 3 to 30 carbon atoms which may have a substituent; R 1 represents a divalent linking group; R 2 represents an arylene group which may have a substituent, and each of R 3 and R 4 independently represents an aryl group which may have a substituent; R 3 and R 4 may be mutually bonded with the sulfur atom to form a ring; R 5 represents a hydroxy group, a halogen atom, an alkyl group of 1 to 5 carbon atoms, an alkoxy group or a fluorinated alkyl group; p represents an integer of 0 to 2; and q represents an integer of 0 to 3.

COATING COMPOSITIONS

Developable bottom antireflective coating compositions are provided. 1. A positive bottom photoimageable antireflective coating composition which is capable of being developed with an aqueous alkali developer and which is coated below a positive photoresist , wherein the antireflective coating composition comprises a polymer , a vinyl ether terminated crosslinking agent and one or more compounds having the formula{'br': None, 'sub': 'p', 'W-(L-(G))'}where W is PAG or Q, where PAG is a photoacid generator and Q is a quencher; where G is G1, where G1 is OH, where each L is a direct bond or a linking group; p is 1 to 12.2. The composition of where W is PAG; and p is 2 to 6.3. The composition of where W is Q; and p is 2 to 6.4. The composition of where L is a linking group chosen from the group consisting of substituted alkyl groups claim 1 , unsubstituted alkyl groups claim 1 , substituted alkyl group claim 1 , substituted cycloalkyl groups claim 1 , unsubstituted cycloalkyl groups claim 1 , substituted aryl groups claim 1 , unsubstituted aryl groups claim 1 , substituted heteroaryl groups claim 1 , unsubstituted heteroaryl groups claim 1 , substituted alkyl groups containing an ether group claim 1 , unsubstituted alkyl groups containing an ether group claim 1 , unsubstituted heteroaryl groups claim 1 , substituted alkyl groupscontaining an ester group claim 1 , and unsubstituted alkyl groups containing an ester group.5. The composition of which comprises one or more compounds having the formula{'br': None, 'sub': 'p', 'PAG-(-L-OH)'} {'br': None, 'sub': 'p', 'Q-(-L-OH).'}, 'and one or more compounds having the formula'}6. The composition of which further comprises a thermal acid generator.7. The composition of wherein PAG is selected from onium salts claim 1 , diazomethane derivatives claim 1 , glyoxime derivatives claim 1 , bissulfone derivatives claim 1 , sulfonic acid esters of N-hydroxyimide compounds claim 1 , β-ketosulfonic acid derivatives claim 1 , disulfone ...

Resist composition, method of forming resist pattern and polymeric compound

A resist composition including a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the base component (A) containing a polymeric compound (A1) including a structural unit (a0) represented by general formula (a0-1) shown below, a structural unit (a1) containing an acid decomposable group which exhibits increased polarity by the action of acid and a structural unit (a6) which generates acid upon exposure (wherein R 1 represents a hydrogen atom, an alkyl group or a halogenated alkyl group; W represents —COO—, —CONH— or a divalent aromatic hydrocarbon group; Y 1 and Y 2 represents a divalent linking group or a single bond; represents a hydrogen atom or an alkyl group of 1 to 6 carbon atoms; R′ 2 represents a monovalent aliphatic hydrocarbon group; and R 2 represents an —SO 2 — containing cyclic group).

PHOTO-CURING POLYSILOXANE COMPOSITION AND APPLICATION THEREOF

Disclosed is a photo-curing polysiloxane composition including: 2. The photo-curing polysiloxane composition as claimed in claim 1 , wherein said pyridine derivative is selected from the group consisting of 2-hydroxymethylpyridine claim 1 , 3-hydroxymethylpyridine claim 1 , 4-hydroxymethyl pyridine claim 1 , 2-hydroxyethyl pyridine claim 1 , 3-hydroxyethyl pyridine claim 1 , 4-hydroxyethyl pyridine claim 1 , 2-hydroxypropyl pyridine. 3-hydroxypropyl pyridine claim 1 , 4-hydroxypropyl pyridine claim 1 , 2 claim 1 ,6-dihydroxymethylpyridine claim 1 , and combinations thereof.3. The photo-curing polysiloxane composition as claimed in claim 1 , wherein said quinonediazidesulfonic acid ester is in an amount ranging from 0.5 to 50 parts by weight claim 1 , said pyridine derivative is in an amount ranging from 0.1 to 20 parts by weight claim 1 , and said solvent is in an amount ranging from 50 to 1200 parts by weight based on 100 parts by weight of said polysiloxane.4. The photo-curing polysiloxane composition as claimed in claim 1 , wherein said polysiloxane is obtained by subjecting a silane monomer component to hydrolysis and partial condensation claim 1 , said silane monomer component including a silane monomer of Formula (I):{'br': None, 'sup': a', 'b, 'sub': t', '4-t, 'Si(R)(OR)\u2003\u2003(I)'}whereint is an integer ranging from 1 to 3,{'sup': a', 'a', 'a, 'sub': 1', '10', '1', '10', '1', '10', '2', '10', '6', '15, 'at least one of Ris selected from the group consisting of an anhydride-substituted C-Calkyl group, an epoxy-substituted C-Calkyl group, and an epoxy-substituted alkoxy group, and the rest of Ris selected from the group consisting of hydrogen, a C-Calkyl group, a C-Calkenyl group, and a C-Caryl group, plural Rs being identical with or different from each other when t is 2 or 3, and'}{'sup': b', 'b, 'sub': 1', '6', '1', '6', '6', '15, 'Ris selected from the group consisting of a hydrogen atom, a C-Calkyl group, a C-Cacyl group, and a C-Caryl group, plural ...

RADIATION-SENSITIVE RESIN COMPOSITION, AND RADIATION-SENSITIVE ACID GENERATING AGENT

A radiation-sensitive resin composition includes a compound represented by a formula (1), and a base polymer. In the formula (1), Ris a group represented by a formula (a1), and M represents a radiation-degradable monovalent cation. In the formula (a1), Rrepresents a substituted or unsubstituted chain hydrocarbon group having 1 to 30 carbon atoms, or the like. Rrepresents a substituted or unsubstituted divalent hydrocarbon group having 1 to 30 carbon atoms, or the like. Rrepresents —CO—, or the like. Rrepresents —CO—, or the like. m is an integer of 0 to 2. n is an integer of 0 to 1. A site denoted by * is a binding site with —O— in the formula (1). 2. The radiation-sensitive resin composition according to claim 1 , wherein M in the formula (1) represents a sulfonium cation or an iodonium cation. The present application is a continuation application of International Application No. PCT/JP2012/050290, filed Jan. 10, 2012, which claims priority to Japanese Patent Application No. 2011-002627, filed Jan. 11, 2011, and to Japanese Patent Application No. 2011-213584, filed Sep. 28, 2011. The contents of these applications are incorporated herein by reference in their entirety.1. Field of the InventionThe present invention relates to a radiation-sensitive resin composition, and a radiation-sensitive acid generating agent.2. Discussion of the BackgroundIn the field of microfabrication, etc., typified by manufacturing of integrated circuit elements, lithography techniques have been recently required that enable microfabrication at a level of no greater than about 100 nm in order to achieve higher integrity. Examples of radioactive rays which may be used in such microfabrication include far ultraviolet rays such as a KrF excimer laser, an ArF excimer laser, an Fexcimer laser and an EUV (extreme ultraviolet) ray, X-rays such as a synchrotron radioactive ray, charged particle rays such as an electron beam, and the like. As radiation-sensitive resin compositions suited for such a ...

PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING MATERIAL COMPRISING THE PHOTOSENSITIVE RESIN COMPOSITION, AND PATTERN FORMING METHOD AND ARTICLE USING THE PHOTOSENSITIVE RESIN COMPOSITION

A photosensitive resin composition which is excellent in resolution, low in cost, and usable in a wide range of structures of polymer precursors each of which is reacted into a final product by a basic substance or by heating in the presence of a basic substance. The photosensitive resin composition includes a base generator which has a specific structure and generates a base by exposure to electromagnetic radiation and heating, and a polymer precursor which is reacted into a final product by the base generator and by a basic substance or by heating in the presence of a basic substance. 2. The photosensitive resin composition according to claim 1 , wherein the base thus generated is a secondary amine which has one NH group that is able to form an amide bond and/or a heterocyclic compound.3. The photosensitive resin composition according to claim 1 , wherein at least one of R claim 1 , R claim 1 , Rand Ris halogen claim 1 , a hydroxyl group claim 1 , a nitro group claim 1 , a nitroso group claim 1 , a mercapto group claim 1 , a silyl group claim 1 , a silanol group or a monovalent organic group claim 1 , or two or more of R claim 1 , R claim 1 , Rand Rare bound to form a condensed ring together with a benzene ring to which R claim 1 , R claim 1 , Rand Rare bound.4. The photosensitive resin composition according to claim 1 , wherein the base thus generated has a boiling point of 25° C. or more and a weight loss of 80% or more at 350° C.6. The photosensitive resin composition according to claim 1 , wherein the base generator has absorption at at least one of electromagnetic wavelengths of 365 nm claim 1 , 405 nm and 436 nm.7. The photosensitive resin composition according to claim 1 , wherein the polymer precursor comprises one or more selected from the group consisting of a compound and polymer having an epoxy group claim 1 , isocyanate group claim 1 , oxetane group or thiirane group claim 1 , a polysiloxane precursor claim 1 , a polyimide precursor and a ...

Lithographic printing plate precursor

A positive-working lithographic printing plate precursor which comprises on a support having a hydrophilic surface or which is provided with a hydrophilic layer, a heat and/or light-sensitive coating comprising an infrared absorbing agent and a binder including a monomeric unit including a salicyclic acid group and a monomeric unit including a sulfonamide group.

POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN FORMING METHOD

A positive resist composition for immersion exposure includes the following (A) to (D): (A) a resin capable of decomposing by an action of an acid to increase a solubility of the resin in an alkali developer; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a resin having at least either one of a fluorine atom and a silicon atom; and (D) a mixed solvent containing at least one kind of a solvent selected from the group consisting of solvents represented by any one of the following formulae (S1) to (S3) as defined in the specification, in which a total amount of the at least one kind of the solvent is from 3 to 20 mass % based on all solvents of the mixed solvent (D). 6. The positive resist composition for immersion exposure according to claim 1 ,wherein the aliphatic sulfonate anion in the compound (B) is substituted by a monovalent group having a polycyclic cycloalkyl group.7. The positive resist composition for immersion exposure according to claim 1 ,wherein the resin (C) contains (x) an alkali-soluble group.8. The positive resist composition for immersion exposure according to claim 1 ,wherein the resin (C) contains (y) a group capable of decomposing by the action of an alkali developer to increase the solubility in an alkali developer.9. The positive resist composition for immersion exposure according to claim 1 ,wherein the resin (C) contains (z) a group capable of decomposing by the action of an acid.10. The positive resist composition for immersion exposure according to claim 1 ,wherein the amount added of the resin (C) is in an amount of 0.01 to 10 mass %, based on the entire solid content of the resist composition.11. The positive resist composition for immersion exposure according to claim 1 ,wherein the composition further contains an onium carboxylate.12. The positive resist composition for immersion exposure according to claim 1 ,wherein the mixed solvent (D) further contains cyclohexanone.14. The ...

RESIST COMPPOSITION AND METHOD OF FORMING RESIST PATTERN

A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, and which includes a base component which exhibits changed solubility in a developing solution by the action of acid, and a nitrogen-containing compound which has a boiling point of 50 to 200° C., a conjugate acid thereof having a pKa of 0 to 7, and a photodecomposable base; and a method of forming a resist pattern using the resist composition. 1. A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution by the action of acid , comprising:a base component (A) which exhibits changed solubility in a developing solution by the action of acid;a nitrogen-containing compound (N) which has a boiling point of 50 to 200° C., wherein a conjugate acid thereof has a pKa of 0 to 7; anda photodecomposable base (D1).2. The resist composition according to claim 1 , further comprising an acid generator component (B) that generates acid upon exposure.6. The resist composition according to claim 1 , wherein the base component (A) comprises a polymeric compound (A1) which comprises a structural unit (a1) containing an acid decomposable group that exhibits increased polarity by the action of acid.7. A method of forming a resist pattern claim 1 , comprising: forming a resist film on a substrate using a resist composition of ; conducting exposure of the resist film; and developing the resist film to form a resist pattern.8. The resist composition according to claim 1 , wherein the nitrogen-containing compound (N) has a boiling point of 55 to 180° C.9. The resist composition according to claim 1 , wherein the conjugate acid has a pKa of 0.5 to 7.17. The resist composition according to claim 1 , wherein the amount of the nitrogen-containing compound (N) relative to 100 parts by weight of the base component (A) is 0.05 to 30 parts by weight.18. The resist composition according to claim 1 , wherein the ...

Polymer, positive resist composition and patterning process

A polymer comprising recurring units of butyrolactone (meth)acrylate, recurring units having a carboxyl or phenolic group which is substituted with an acid labile group, and recurring units having a phenol group or an adhesive group in the form of 2,2,2-trifluoro-1-hydroxyethyl is quite effective as a base resin for resist. A positive resist composition comprising the polymer is improved in such properties as a contrast of alkali dissolution rate before and after exposure, acid diffusion suppressing effect, resolution, and profile and edge roughness of a pattern after exposure.

POSITIVE PHOTORESIST COMPOSITION, COATING FILM THEREOF, AND NOVOLAC PHENOL RESIN

A positive photoresist composition includes 3 to 80 parts by mass of a novolac phenol resin (B) relative to 100 parts by mass of a cresol novolac resin (A). The novolac phenol resin (B) has a repeating structural unit represented by formula (1) 3. The positive photoresist composition according to claim 2 , wherein a weight-average molecular weight of the novolac phenol resin (B) is 5 claim 2 ,000 to 35 claim 2 ,000.5. The positive photoresist composition according to claim 4 , wherein a weight-average molecular weight of the novolac phenol resin (B) is 1000 to 5000.8. The positive photoresist composition according to claim 4 , wherein the aldehyde-based compound (D) is formaldehyde.9. The positive photoresist composition according to claim 1 , wherein the novolac phenol resin (B) contains 90% or more of (x1) relative to a total of 100 of (x1) and (x2).10. The positive photoresist composition according to claim 1 , comprising 20 to 60 parts by mass of the novolac phenol resin (B) relative to 100 parts by mass of the cresol novolac resin (A).11. The positive photoresist composition according to claim 1 , wherein the cresol novolac resin (A) is prepared by using claim 1 , as essential raw materials claim 1 , m-cresol or p-cresol claim 1 , and formaldehyde.12. A coating film obtained by applying and drying the positive photoresist composition according to .15. The positive photoresist composition according to claim 5 , wherein the aldehyde-based compound (D) is formaldehyde.16. The positive photoresist composition according to claim 2 , wherein the novolac phenol resin (B) contains 90% or more of (x1) relative to a total of 100 of (x1) and (x2).17. The positive photoresist composition according to claim 3 , wherein the novolac phenol resin (B) contains 90% or more of (x1) relative to a total of 100 of (x1) and (x2).18. The positive photoresist composition according to claim 4 , wherein the novolac phenol resin (B) contains 90% or more of (x1) relative to a total of 100 ...

PHOTORESIST COMPOSITION AND METHOD FOR PRODUCING PHOTORESIST PATTERN

A photoresist composition comprising 6. The photoresist composition according to claim 1 , which further comprises a solvent.7. A process for producing a photoresist pattern comprising the following steps (1) to (5):{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, '(1) a step of applying the photoresist composition according to on a substrate,'}(2) a step of forming a composition film by drying the composition,(3) a step of exposing the composition film to radiation,(4) a step of baking the exposed composition film, and(5) a step of developing the baked composition film, thereby forming a photoresist pattern.11. The photoresist composition according to claim 2 , which further comprises a solvent.12. A process for producing a photoresist pattern comprising the following steps (1) to (5):{'claim-ref': {'@idref': 'CLM-00002', 'claim 2'}, '(1) a step of applying the photoresist composition according to on a substrate,'}(2) a step of forming a composition film by drying the composition,(3) a step of exposing the composition film to radiation,(4) a step of baking the exposed composition film, and(5) a step of developing the baked composition film, thereby forming a photoresist pattern. This nonprovisional application claims priority under 35 U.S.C. §119(a) on Patent Application No. 2012-159646 filed in JAPAN on Jul. 18, 2012, the entire contents of which are hereby incorporated by reference.The present invention relates to a photoresist composition and a method for producing a photoresist pattern.As a method for forming a negative photoresist pattern, JP2008-309879A1 mentions a photoresist composition comprising: a resin which increases in its polarity by action of an acid and which shows increased solubility in positive developer and decreased solubility in negative developer by irritation of active light or radiant lay,a compound which generates an acid by irritation of active light or radiant lay, solvent, and a resin which comprises at least one of a fluorine atom ...

ACTINIC-RAY-OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION

Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (P) containing an acid-decomposable repeating unit (A), which resin when acted on by an acid, increases its solubility in an alkali developer, a compound (Q) that when exposed to actinic rays or radiation, generates an acid, and a compound (R) expressed by general formula () or () below. 2. The composition according to claim 1 , wherein the organic group is an alkyl group or an aryl group.3. The composition according to claim 1 , wherein the compound (R) is expressed by general formula (1) claim 1 , and wherein at least one of Rand Ris a hydrogen atom.4. The composition according to claim 3 , wherein both of Rand Rare hydrogen atoms.5. The composition according to claim 1 , wherein the compound (R) is expressed by general formula (2) claim 1 , and wherein Ris a hydrogen atom.8. The composition according to claim 7 , wherein the repeating unit (B) has a hydroxystyrene structure.9. The composition according to claim 1 , further comprising a basic compound other than the compound (R).10. The composition according to claim 9 , wherein the basic compound contains no hydroxyl group.11. The composition according to for use in a pattern formation including exposure by EUV.12. An actinic-ray- or radiation-sensitive resin film formed from the composition according to .13. A method of forming a pattern claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00012', 'claim 12'}, 'exposing the film according to to light, and'}developing the exposed film.14. The method according to claim 13 , wherein the exposure is carried out by EUV light.15. A process for manufacturing an electronic device claim 13 , comprising the pattern forming method according to .16. An electronic device manufactured by the process according to . This application is a Continuation Application of PCT Application No. PCT/JP2012/059300, filed Mar. 29, 2012 and based upon and claiming the benefit of priority from prior Japanese ...

PHOTORESIST COMPOSITION AND METHOD FOR PRODUCING PHOTORESIST PATTERN

A photoresist composition comprising 2. The photoresist composition according to claim 1 , wherein Rrepresents a C3-C18 unsubstituted alicyclic hydrocarbon group.5. A process for producing a photoresist pattern comprising the following steps (1) to (5):{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, '(1) a step of applying the photoresist composition according to on a substrate,'}(2) a step of forming a composition film by drying the composition,(3) a step of exposing the composition film to radiation,(4) a step of baking the exposed composition film, and(5) a step of developing the baked composition film, thereby forming a photoresist pattern.7. A process for producing a photoresist pattern comprising the following steps (1) to (5):{'claim-ref': {'@idref': 'CLM-00002', 'claim 2'}, '(1) a step of applying the photoresist composition according to on a substrate,'}(2) a step of forming a composition film by drying the composition,(3) a step of exposing the composition film to radiation,(4) a step of baking the exposed composition film, and(5) a step of developing the baked composition film, thereby forming a photoresist pattern. This nonprovisional application claims priority under 35 U.S.C. §119(a) on Patent Application No. 2012-166681 filed in JAPAN on Jul. 27, 2012, the entire contents of which are hereby incorporated by reference.The present invention relates to a photoresist composition and a method for producing a photoresist pattern.As a method for forming a negative photoresist pattern, JP2010-197413A1 mentions a positive type photoresist composition for immersion exposure, which comprises:a fluorine-containing macromolecular compound (F1) which comprises a structural unit having a base-dissociable group and a structural unit represented by the following general formula (f2-1);where R represents a hydrogen atom, a C1-C5 alkyl group, or a C1-C5 halogenated alkyl group, and W represents a polycyclic hydrocarbon-containing group, a base component (A) which ...

PHOTORESIST COMPOSITION, THIN FILM TRANSISTOR ARRAY PANEL, AND METHOD OF MANUFACTURING THE SAME

A positive photoresist composition including a novolac resin, a photo active compound (PAC), a melamine crosslinking agent, and a solvent. 1. A positive photoresist composition , comprising:a novolac resin,a photo active compound,a melamine crosslinking agent, anda solvent.2. The positive photoresist composition of claim 1 , wherein the photo active compound comprises 1 claim 1 ,2-naphthoquinonediazide-5-sulfonate.3. The positive photoresist composition of claim 2 , wherein the photo active compound is a product of condensing a quinone diazide sulfonic acid chloride comprising 1 claim 2 ,2-benzoquinone diazide-4-sulfonic acid chloride and 1 claim 2 ,2-napthoquinone diazide-5-sulfonic acid chloride with a phenol compound comprising 2 claim 2 ,3 claim 2 ,4-trihydroxybenzophenone and 2 claim 2 ,2′ claim 2 ,4 claim 2 ,4′-tetrahydroxybenzophenone.4. The positive photoresist composition of claim 1 , wherein the novolac resin includes a high molecular weight portion claim 1 , a medium molecular weight portion and a low molecular weight portion claim 1 , andwherein an amount of at least one of the medium molecular weight portion or the low molecular weight portion of the novolac resin is reduced compared to an amount of a medium molecular weight portion or the low molecular weight portion in a same novolac resin not treated by a solvent.5. The positive photoresist composition of claim 1 , wherein the novolac resin comprises at least one structural unit of ortho-cresol claim 1 , meta-cresol claim 1 , para-cresol claim 1 , 2 claim 1 ,3-dimethylphenol claim 1 , 3 claim 1 ,4-dimethylphenol claim 1 , 3 claim 1 ,5-dimethylphenol claim 1 , 2 claim 1 ,4-dimethylphenol claim 1 , 2 claim 1 ,6 claim 1 ,6-trimethylphenol claim 1 , 2-methylresorcinol claim 1 , 4-methylresorcinol claim 1 , 5-methylresorcinol claim 1 , 3-propylphenol claim 1 , 4-propylphenol claim 1 , 2-isopropylphenol claim 1 , or 2-methoxy-5-methylphenol.6. The positive photoresist composition of claim 5 , wherein the ...

LITHOGRAPHY USING PHOTORESIST WITH PHOTOINITIATOR AND PHOTOINHIBITOR

Technologies are generally described for a photoresist and methods and systems effective to form a pattern in a photoresist on a substrate. In some examples, the photoresist includes a resin, a photoinitiator and a photoinhibitor. The photoinitiator may be effective to generate a first reactant upon the absorption of at least one photon of a particular wavelength of light. The first reactant may be effective to render the resin soluble or insoluble in a photoresist developer. The photoinhibitor may be effective to generate a second reactant upon the absorption of at least one photon of the particular wavelength of light. The second reactant may be effective to inhibit the first reactant. 1. A photoresist comprising:at least one resin;at least one photoinitiator effective to generate a first reactant upon the absorption of at least two photons of a particular wavelength of light from incident light, wherein the first reactant is effective to render the resin soluble or insoluble in a photoresist developer; andat least one photoinhibitor effective to generate a second reactant upon the absorption of at least one photon of the particular wavelength of light from the incident light, wherein the second reactant is effective to inhibit the first reactant.2. The photoresist of claim 1 , wherein the particular wavelength of light is greater than 193 nm.3. The photoresist of claim 1 , wherein the particular wavelength of light is about 300 nm to about 400 nm.4. The photoresist of claim 1 , wherein the first reactant is an acidic compound and the second reactant is a basic compound.5. The photoresist of claim 1 , wherein:the first reactant is an acidic compound;the second reactant is a basic compound; andthe acidic compound is effective to depolymerize the resin.6. The photoresist of claim 1 , wherein the photoinitiator includes caged benzophenone and diphenyliodonium hexafluorophosphate.7. The photoresist of claim 4 , wherein the acidic compound is hexafluorophosphoric acid. ...

MAINTENANCE LIQUID

Disclosed is a maintenance liquid for property carrying out imprints excellent in patternability. The maintenance liquid for imprints of an ink-jet discharging device comprises a compound comprising an ester group and/or an ether group. 2. The maintenance liquid according to claim 1 , wherein the compound having an ester group and/or an ether group is a polymerizable monomer.3. The maintenance liquid according to claim 1 , having a viscosity at 25° C. of 50 mPa·s or less.4. The maintenance liquid according to claim 1 , containing a compound having both of an ester functional group and an ether group claim 1 , or containing both of a compound having an ester functional group and a compound having an ether group.5. The maintenance liquid according to claim 1 , having a boiling point at 1 atm of 150° C. or higher.6. The maintenance liquid according to claim 1 , wherein 50% by mass or more of the maintenance liquid is the compound having an ester group and/or an ether group.7. The maintenance liquid according to claim 1 , which consists essentially of the compound having an ester group and/or an ether group and the polymerizable monomer.8. The maintenance liquid according to claim 1 , which consists essentially of the compound having an ester group and/or an ether group and a (meth)acrylate monomer.9. A method of manufacturing the maintenance liquid according to claim 1 , the method including a process of mixing components for composing the maintenance liquid claim 1 , followed by filtration.10. The maintenance liquid according to claim 1 , wherein the compound having an ester group and/or an ether group is different from the polymerizable monomer.11. The maintenance liquid according to claim 1 , wherein the compound having an ester group and/or an ether group is non-polymerizable.12. The maintenance liquid according to claim 1 , wherein the compound having an ester group and/or an ether group is non-polymerizable.13. The maintenance liquid according to claim 1 , ...

Patterning process and resist composition

A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units having a tertiary ester type acid labile group having a plurality of methyl or ethyl groups on alicycle and an acid generator onto a substrate, prebaking, exposing to high-energy radiation, baking, and developing in an organic solvent developer so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high dissolution contrast during organic solvent development and forms a fine hole or trench pattern of dimensional uniformity.

Method of Stabilizing Fluorine-Containing Acid Amplifier

A method of stabilizing a fluorine-containing acid amplifier. The method is provided to include the step of dissolving a fluorine-containing acid amplifier in an organic solvent thereby producing a solution of the fluorine-containing acid amplifier, the fluorine-containing acid amplifier being represented by general formula (1): 4. A method of stabilizing a fluorine-containing acid amplifier claim 1 , as claimed in claim 1 , wherein the organic solvent is at least one kind selected from the group consisting of aliphatic hydrocarbons claim 1 , aromatic hydrocarbons claim 1 , halogenated hydrocarbons claim 1 , alcohols claim 1 , ketones claim 1 , cyclic ketones claim 1 , polyalcohols claim 1 , polyalcohol derivatives claim 1 , cyclic ethers claim 1 , chain ethers claim 1 , esters claim 1 , sulfonyl esters claim 1 , amides claim 1 , aromatic solvents and fluorine-based solvents.5. A method of stabilizing a fluorine-containing acid amplifier claim 1 , as claimed in claim 1 , wherein the fluorine-containing acid amplifier contained in the solution of the fluorine-containing acid amplifier has a concentration of 0.05 to 90 mass %.6. A method of stabilizing a fluorine-containing acid amplifier claim 1 , as claimed in claim 1 , further comprising the step of:adding an additive to the solution of the fluorine-containing acid amplifier.7. A method of stabilizing a fluorine-containing acid amplifier claim 6 , as claimed in claim 6 , wherein the additive is a basic compound or an antioxidant.8. A method of stabilizing a fluorine-containing acid amplifier claim 7 , as claimed in claim 7 , wherein the basic compound is at least one kind selected from the group consisting of primary claim 7 , secondary or tertiary aliphatic amines claim 7 , aromatic amines claim 7 , heterocyclic amines claim 7 , nitrogen-containing compounds having hydroxyphenyl group claim 7 , alcoholic nitrogen-containing compounds and amide derivatives.9. A method of stabilizing a fluorine-containing acid ...

POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANK, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION

A positive resist composition contains: (A) a polymer compound having a structure where a hydrogen atom of a phenolic hydroxyl group is replaced by an acid labile group represented by the following formula (I): 6. The positive resist composition according to claim 1 ,wherein a polydispersity of the polymer compound (A) is from 1.0 to 1.2.7. The positive resist composition according to claim 1 , which is for electron beam or extreme-ultraviolet exposure.8. A resist film claim 1 , which is formed from the positive resist composition according to .9. A resist-coated mask blank claim 8 , which is coated with the resist film according to .10. A resist pattern forming method claim 8 , comprising:{'claim-ref': {'@idref': 'CLM-00008', 'claim 8'}, 'exposing the resist film according to , so as to form an exposed film; and'}developing the exposed film.11. A resist pattern forming method claim 8 , comprising:{'claim-ref': {'@idref': 'CLM-00009', 'claim 9'}, 'exposing the resist-coated mask blank according to , so as to form an exposed resist-coated mask blank; and'}developing the exposed resist-coated mask blank.12. The resist pattern forming method according to claim 10 ,wherein the exposure is performed using an electron beam or an extreme-ultraviolet ray.13. A photomask claim 9 , which is obtained by exposing and developing the resist-coated mask blank according to . This is a continuation of International Application No. PCT/JP2012/062722 filed on May 11, 2012, and claims priority from Japanese Patent Application No. 2011-107702 filed on May 12, 2011, the entire disclosures of which are incorporated herein by reference.The present invention relates to a positive resist composition suitably usable in the ultramicrolithography process such as production of VLSI or a high-capacity microchip as well as in other photofabrication processes and capable of forming a highly defined pattern by using an electron beam (EB), an extreme-ultraviolet ray (EUV) or the like, and a resist ...

ONIUM COMPOUNDS AND METHODS OF SYNTHESIS THEREOF

New onium salt compounds and methods for synthesis of such compounds are provided. Preferred methods of the invention include (a) providing an onium salt compound comprising a sulfonate component having an electron withdrawing group; and (b) treating the onium salt compound with a halide salt to form a distinct salt of the onium compound. The present onium compounds are useful as an acid generator component of a photoresist composition. 1. A method for preparing an onium salt compound , comprising:(a) providing an onium salt compound comprising a sulfonate component, wherein the sulfonate component comprises an electron withdrawing group; and(b) treating the onium salt compound with a halide salt to form a distinct salt of the onium compound.2. The method of wherein the one or more electron withdrawing groups comprise one or more halogen atoms.3. The method of wherein the sulfonate component is a triflate.5. The method of wherein one or more of R claim 6 , Rand Rare halogen or halogenated alkyl.6. The method of wherein (i) the onium salt compound is treated with a halide salt to form a halide salt of the onium compound and (ii) the halide salt of the onium compound is further treated to provide the distinct salt of the onium compound.7. A method of preparing a photoresist composition claim 6 , comprising admixing the distinct salt of the onium compound of with a polymer to provide a photoresist composition.8. A photolithographic method comprising: (i) applying a coating layer of a photoresist composition prepared in accordance with on a substrate surface; (ii) exposing the photoresist composition layer to activating radiation; and (iii) developing the exposed photoresist composition layer to provide a resist relief image.9. An onium salt compound claim 7 , obtainable by a method comprising:(a) providing an onium salt comprising a sulfonate component, wherein the sulfonate component an electron withdrawing group;(b) treating the sulfonate salt with a halide salt to ...

ACID GENERATOR COMPOUNDS AND PHOTORESISTS COMPRISING SAME

Acid generator compounds are provided that are particularly useful as a photoresist composition component. Acid generator compounds of the invention comprise 1) a cyclic sulfonium salt and 2) a covalently linked photoacid-labile group. In one aspect, thioxanthone acid generator compounds are particularly preferred, including acid generator compounds that comprise (i) a thioxanthone moiety; and (ii) one or more covalently linked acid labile-groups. 1. A photoresist composition comprising:(a) a polymer; and (i) a thioxanthone moiety; and', '(ii) one or more covalently linked acid labile-groups., '(b) an acid generator comprising6. The photoresist composition of wherein the acid generator compound comprises an acid-labile group of the following Formula (III):{'br': None, 'sub': 'n', 'sup': '3', '—O (CXY)R\u2003\u2003(III)'}{'sup': '3', 'wherein X and Y are independently hydrogen or a non-hydrogen substituent; Ris a non-hydrogen substituent that provides an acid-labile moiety; and n is a positive integer.'}7. The photoresist composition of wherein the acid generator compound exhibits a reduction potential of −0.9 to 0 V (vs. Ag/AgCl claim 1 , cathodic peak potential) in a standard reduction potential assay.8. The photoresist composition of wherein the acid generator compound is covalently bound to a polymer.9. A method for providing a photoresist relief image claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a) applying a coating layer of a photoresist composition of on a substrate; and'}b) exposing the photoresist composition layer to activating radiation and developing the exposed photoresist composition coating layer.10. The method of wherein the photoresist composition layer is exposed to EUV or e-beam radiation.11. An acid generator compound as described in . The present invention relates to new acid generator compounds that comprise a cyclic sulfonium salt with a covalently linked acid-labile moiety and photoresist compositions that comprise ...

PHOTORESISTS COMPRISING MULTIPLE ACID GENERATOR COMPOUNDS

The present invention relates to new photoresist compositions that comprise (a) a polymer comprising an acid generator bonded thereto; and (b) an acid generator compound that is not bonded to the polymer and that comprises one or more acid-labile groups. 1. A photoresist composition comprising:(a) a polymer comprising an acid generator bonded thereto; and(b) an acid generator compound that is not bonded to the polymer and that comprises one or more acid-labile groups.2. The photoresist composition of wherein the (a) bonded acid generator and/or the (b) acid generator compound comprise a sulfonium moiety and/or an iodonium moiety.3. The photoresist composition of or wherein the (a) bonded acid generator and/or the (b) acid generator compound comprise a thioxanthone moiety.43. The photoresist composition of any one of through wherein the (a) bonded acid generator and/or the (b) acid generator compound comprise a dibenzothiophene moiety.53. The photoresist composition of any one of through wherein the (a) bonded acid generator comprises an anion component covalently bonded to the polymer.65. The photoresist composition of any one of through wherein the (a) bonded acid generator comprises an acid-labile group.76. The photoresist composition of any one of through wherein the acid-labile group of the (b) acid generator compound is on a cation component of the acid generator compound.87. The photoresist composition of any one of through wherein the (b) acid generator compound is present in an amount of from 10 to 50 weight.percent relative to the (a) polymer with bonded acid generator.9. A method for providing a photoresist relief image claims 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claims 1'}, 'b': '8', 'a) applying a coating layer of a photoresist composition of any one of through on a substrate; and'}b) exposing the photoresist composition layer to activating radiation and developing the exposed photoresist composition coating layer.10. The method of ...

Chemically amplified positive resist composition and pattern forming process

In a chemically amplified positive resist composition comprising (A) a base resin, (B) a photoacid generator, (C) a thermal crosslinker, and (D) an organic solvent, the base resin is a specific polymer and the crosslinker is a siloxane compound. A coating of the composition is readily developable in aqueous alkaline solution. On heat treatment, it forms a cured resist pattern film of satisfactory profile.

PHOTOSENSITIVE RESIN COMPOSITION AND APPLICATIONS THEREOF

A photosensitive resin composition includes: an alkali-soluble resin; an o-naphthoquinonediazidesulfonic acid ester; a urethane(meth)acrylate compound having at least six (meth)acryloyl groups in a molecule; and a solvent. A protective film which is formed from the photosensitive resin composition and an element which includes the protective film are also provided. 1. A photosensitive resin composition comprising:an alkali-soluble resin;an o-naphthoquinonediazidesulfonic acid ester;a urethane(meth)acrylate compound having at least six (meth)acryloyl groups in a molecule; anda solvent.2. The photosensitive resin composition as claimed in claim 1 , wherein said alkali-soluble resin is obtained by subjecting a mixture to copolymerization claim 1 , said mixture containing at least one carboxyl group-containing compound selected from the group consisting of an unsaturated carboxylic acid compound and an unsaturated carboxylic anhydride compound claim 1 , a first unsaturated compound having an epoxy group claim 1 , and a second unsaturated compound different from said at least one carboxyl group-containing compound and said first unsaturated compound having the epoxy group.3. The photosensitive resin composition as claimed in claim 1 , wherein said o-naphthoquinonediazidesulfonic acid ester is in an amount ranging from 10 to 50 parts by weight claim 1 , said urethane(meth)acrylate compound is in an amount ranging from 1 to 30 parts by weight claim 1 , and said solvent is in an amount ranging from 100 to 800 parts by weight based on 100 parts by weight of said alkali-soluble resin.4. A protective film formed from the photosensitive resin composition as claimed in .5. An element comprising the protective film as claimed in . This application claims priority of Taiwanese Patent Application No. 101135626, filed on Sep. 27, 2012.1. Field of the InventionThe invention relates to a photosensitive resin composition, more particularly to a photosensitive resin composition for ...

PHOTOSENSITIVE RESIN COMPOSITION AND APPLICATIONS THEREOF

A photosensitive resin composition includes: an alkali-soluble resin; an o-naphthoquinonediazidesulfonic acid ester; a silsesquioxane having at least two thiol groups in a molecule; and a solvent. The silsesquioxane is obtained by subjecting to condensation a silane material which includes a thiol-group-containing silane represented by RSi(OR). Rrepresents a C-Corganic group that contains a thiol group and that is free from an aromatic group, or an organic group that contains a thiol group and an aromatic group. Rindependently represents hydrogen, a C-Calkyl group, a C-Cacyl group, or a C-Caromatic group. 1. A photosensitive resin composition comprising:(A) an alkali-soluble resin;(B) an o-naphthoquinonediazidesulfonic acid ester;(c) a silsesquioxane having at least two thiol groups in a molecule; and(D) a solvent; {'br': None, 'sup': a', 'b, 'sub': '3', 'RSi(OR)\u2003\u2003(I),'}, 'wherein said silsesquioxane is obtained by subjecting to condensation a silane material which includes a thiol-group-containing silane represented by formula (I){'sup': a', 'b, 'sub': 1', '8', '1', '6', '1', '6', '6', '15, 'wherein Rrepresents a C-Corganic group that contains a thiol group and that is free from an aromatic group, or an organic group that contains a thiol group and an aromatic group, and Rindependently represents hydrogen, a C-Calkyl group, a C-Cacyl group, or a C-Caromatic group.'}2. The photosensitive resin composition as claimed in claim 1 , wherein said alkali-soluble resin (A) is obtained by subjecting a mixture to copolymerization claim 1 , said mixture containing (a1) at least one of an unsaturated carboxylic acid compound or an unsaturated carboxylic anhydride compound claim 1 , (a2) an unsaturated compound having an epoxy group claim 1 , and (a3) an unsaturated compound different from said unsaturated carboxylic acid compound claim 1 , said unsaturated carboxylic anhydride compound claim 1 , and said unsaturated compound having an epoxy group.3. The ...

PHOTOSENSITIVE RESIN COMPOSITION FOR FORMING BIOCHIP, AND BIOCHIP

It is intended to obtain a photosensitive resin composition that is capable of forming a highly fine pattern with a high aspect ratio while attaining the high adhesion of the pattern to a substrate, having low autofluorescence, and being exceedingly suitable for producing a biochip that causes exceedingly low damage on cultured cells. The photosensitive resin composition for forming a biochip of the present invention contains: an epoxy compound (A1) of a particular structure having an oxycyclohexane skeleton having an epoxy group; an epoxy compound (A2) of a particular structure which is a polyvalent carboxylic acid derivative having an epoxidized cyclohexenyl group; a cationic photoinitiator (B); and a solvent (C). 2. The photosensitive resin composition for forming a biochip according to claim 1 , wherein the ratio between the epoxy compound (A1) and the epoxy compound (A2) contained therein is the former/the latter (weight ratio)=1/99 to 99/1.3. The photosensitive resin composition for forming a biochip according to claim 1 , wherein the cationic photoinitiator (B) is a triarylsulfonium salt.4. The photosensitive resin composition for forming a biochip according to claim 1 , wherein the solvent (C) is at least one solvent selected from the group consisting of ketone-based solvents claim 1 , ester-based solvents claim 1 , and glycol ether-based solvents.5. A dry film resist comprising a base film and a photosensitive resin layer claim 1 , wherein the photosensitive resin layer is formed by applying a photosensitive resin composition for forming a biochip according to on the base film claim 1 , or wherein the photosensitive resin layer is formed by applying a photosensitive resin composition for forming said biochip on the base film and a cover film is layered on the photosensitive resin layer.6. A biochip comprising a first substrate claim 1 , a photosensitive resin layer having a pattern claim 1 , and a second substrate claim 1 ,{'claim-ref': {'@idref': 'CLM- ...

ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF

The present invention provides an array substrate and a manufacturing method thereof. The manufacturing method of the array substrate adopts a multi-stage mask to expose and develop, so that a thickness of a remaining photoresist layer in a channel region corresponding to a display region is same as a thickness of a remaining photoresist layer in a channel region corresponding to a GOA region. Therefore, the two channel regions can be completely etched to prevent short-circuiting, and make up for defects of different action efficiency of developers caused by different densities of thin film transistors in the display region and the GOA region. 1. A manufacturing method of an array substrate , comprising following steps:{'b': '10', 'S: providing a base substrate, wherein the base substrate comprises a display region and a gate on array (GOA) region, and a gate, a gate insulating layer, an active layer, and a source/drain metal layer are sequentially formed on the base substrate;'}{'b': '20', 'S: forming a photoresist layer on the source/drain metal layer;'}{'b': '30', 'S: using a mask to expose and develop the photoresist layer, so that a thickness of the photoresist layer remaining in a channel region corresponding to the first thin film transistors in the display region is same as a thickness of the photoresist layer remaining in a channel region corresponding to the second thin film transistors in the GOA region, and a light transmittance rate of the mask is adjusted by adjusting relative content of cadmium metal and cadmium oxide in an adjusting film layer;'}{'b': '40', 'S: ashing a remaining portion of the photoresist layer to completely remove the photoresist layer corresponding to the channel region of the first thin film transistors in the display region and corresponding to the channel region of the second thin film transistors in the GOA region; and'}{'b': '50', 'S: etching the source/drain metal layer corresponding to the display region and the GOA region ...

Cyclic sulfonate compounds as photoacid generators in resist applications

Novel photoacid generator compounds are provided. Compositions that include the novel photoacid generator compounds are also provided. The present disclosure further provides methods of making and using the photoacid generator compounds and compositions disclosed herein. The compounds and compositions are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications.

SULFONIC ACID DERIVATIVE COMPOUNDS AS PHOTOACID GENERATORS IN RESIST APPLICATIONS

Novel photoacid generator compounds are provided. Photoresist compositions that include the novel photoacid generator compounds are also provided. The invention further provides methods of making and using the photoacid generator compounds and photoresist compositions disclosed herein. The compounds and compositions are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications. 2. A photoresist composition comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, '(i) at least one sulfonic acid derivative compound according to ;'}(ii) at least one polymer or copolymer which is capable of being imparted with an altered solubility in an aqueous solution in the presence of an acid;(iii) an organic solvent; and, optionally,(iv) an additive.3. The composition according to claim 2 , wherein the organic solvent is propylene glycol monomethyl ether acetate (PGMEA).4. The composition according to comprising:0.05 to 15 wt. % of the sulfonic acid derivative compound;5 to 50 wt. % of the at least one polymer or copolymer;0 to 10 wt. % of the additive; andreminder is propylene glycol monomethyl ether acetate.5. A process of producing a patterned structure on the surface of a substrate claim 3 , the process comprising the steps of{'claim-ref': {'@idref': 'CLM-00004', 'claim 4'}, '(a) applying a layer of the composition according to onto the surface of the substrate and at least partial removal of the organic solvent (iv);'}(b) exposing the layer to electromagnetic radiation, thereby releasing an acid from the sulfonic acid derivative compound (i) in the areas exposed to the electromagnetic radiation;(c) optionally heating the layer to impart compound (ii) in the areas in which the acid has been released with an increased solubility in an aqueous solution; and(d) at least partial removal of the layer with an aqueous solution in these areas.6. The composition according to wherein claim 2 , during the exposure step ...

RESIST COMPOSITION AND PATTERNING PROCESS

A resist composition is provided comprising (A) a fluorine-containing polymer, (B) a base resin, (C) an acid generator, and (D) a solvent mixture of a first solvent which is a C-Cketone, C-Calcohol, C-Cether or C-Cester and a second solvent which is a lactone ring-containing C-Ccompound. A pattern is formed by coating the resist composition, prebake, exposure, and development. In immersion lithography, the resist film is improved in water slip. In EB or EUV lithography, outgassing is suppressed and edge roughness is reduced. 1. A resist composition comprising(A) a fluorine-containing polymer,(B) a base resin adapted to increase its solubility in alkaline developer under the action of acid,(C) an acid generator, and{'sub': 5', '8', '4', '6', '3', '6', '4', '9', '6', '9, '(D) an organic solvent mixture containing (D-1) a first solvent selected from the group consisting of C-Cketones, C-Calcohols having at least one group selected from alkoxy, carbonyl and ester groups, C-Cethers having a hydroxyl group or two ether groups, and C-Cesters having an ether or hydroxyl group, and (D-2) a second solvent which is a monocyclic lactone ring-containing C-Ccompound, the second solvent being added in an amount of more than 200 parts to 1,000 parts by weight per 100 parts by weight of the base resin.'}2. The resist composition of wherein{'sub': 5', '8, 'the C-Cketones include cyclohexanone, cyclopentanone, 2-heptanone, and 2-octanone,'}{'sub': 4', '6, 'the C-Calcohols having at least one group selected from alkoxy, carbonyl and ester groups include 3-methoxybutanol, 3-methyl-3-methoxybutanol, 1-methoxy-2-propanol, 1-ethoxy-2-propanol, and diacetone alcohol,'}{'sub': 3', '6, 'the C-Cethers having a hydroxyl group or two ether groups include propylene glycol monomethyl ether, ethylene glycol monomethyl ether, propylene glycol monoethyl ether, ethylene glycol monoethyl ether, propylene glycol dimethyl ether, and diethylene glycol dimethyl ether, and'}{'sub': 4', '9, 'the C-Cesters ...

PHOTO ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS

A photo acid generator represented (1a), 3. A chemically amplified resist composition comprising (A) a base resin claim 1 , (B) the photo acid generator according to claim 1 , and (C) an organic solvent.4. A chemically amplified resist composition comprising (A) a base resin claim 2 , (B) the photo acid generator according to claim 2 , and (C) an organic solvent.9. The chemically amplified resist composition according to claim 3 , further comprising a photo acid generator besides the component (B).10. The chemically amplified resist composition according to claim 4 , further comprising a photo acid generator besides the component (B).11. The chemically amplified resist composition according to claim 3 , further comprising a quencher.12. The chemically amplified resist composition according to claim 4 , further comprising a quencher.13. The chemically amplified resist composition according to claim 3 , further comprising a surfactant insoluble in water and soluble in alkaline developer.14. The chemically amplified resist composition according to claim 4 , further comprising a surfactant insoluble in water and soluble in alkaline developer.15. A patterning process comprising the steps of:{'claim-ref': {'@idref': 'CLM-00003', 'claim 3'}, 'applying the chemically amplified resist composition according to onto a substrate; performing exposure by a high energy beam after heat treatment; and performing development by using a developer.'}16. The patterning process according to claim 15 , wherein in the exposure step claim 15 , a liquid having a refractive index of 1.0 or more is placed between a resist coat film and a projection lens to perform immersion exposure.17. The patterning process according to claim 16 , wherein a top coat is applied on the resist coat film claim 16 , and the liquid having a refractive index of 1.0 or more is placed between the top coat and the projection lens to perform the immersion exposure.18. The patterning process according to claim 15 , ...

Lithographic Patterning Process and Resists to Use Therein

A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX 3 , A 2 BX 4 , or ABX 4 , wherein A is a compound containing an NH 3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovsikte material.

RADIATION-SENSITIVE COMPOSITION AND PATTERN-FORMING METHOD

A radiation-sensitive composition contains: a compound that includes a metal and an oxygen atom, the metal and the oxygen atom being bonded by a covalent bond; and a solvent composition. The metal is a metal of an element belonging to any one of period 4 to period 7 of group 3 to group 15 in periodic table. The solvent contains: a first solvent having a viscosity at 20° C. of no greater than 10 mPa·s and a vapor pressure at 20° C. of no greater than 5 kPa; and a second solvent having a van der Waals volume of no greater than 150 Å, and being different from the first solvent. The second solvent is: water; a monovalent alcohol represented by R—OH; R—COOH; or a combination thereof. 1. A radiation-sensitive composition comprising:a compound comprising a metal and an oxygen atom, the metal and the oxygen atom being bonded by a covalent bond; anda solvent composition,whereinthe metal is a metal of an element belonging to any one of period 4 to period 7 of group 3 to group 15 in periodic table, andthe solvent composition comprises:a first solvent having a viscosity at 20° C. of no greater than 10 mPa·s and a vapor pressure at 20° C. of no greater than 5 kPa; and{'sup': '3', 'a second solvent having a van der Waals volume of no greater than 150 Å, and being different from the first solvent,'}{'sup': 1', '2', '1', '2, 'the second solvent being: water; a monovalent alcohol represented by R—OH; R—COOH; or a combination thereof, wherein Rrepresents a monovalent organic group having 1 to 4 carbon atoms, and Rrepresents a monovalent organic group having 1 to 30 carbon atoms.'}2. The radiation-sensitive composition according to claim 1 , whereina content of the first solvent in the solvent composition is no less than 50% by mass and no greater than 90% by mass, anda content of the second solvent in the solvent composition is no less than 10% by mass and no greater than 50% by mass.3. The radiation-sensitive composition according to claim 1 , wherein the first solvent is a ketone ...

CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, METHOD OF MANUFACTURING PHOTOSENSITIVE DRY FILM, METHOD OF MANUFACTURING PATTERNED RESIST FILM, METHOD OF MANUFACTURING SUBSTRATE WITH TEMPLATE, METHOD OF MANUFACTURING PLATED ARTICLE, AND NITROGEN-CONTAINING AROMATIC HETEROCYCLIC COMPOUND

A chemically amplified positive-type photosensitive resin composition including an acid generator which generates acid upon exposure to an irradiated active ray or radiation, a resin whose solubility in alkali increases under the action of acid, and a nitrogen-containing aromatic heterocyclic compound that is a nitrogen-containing aromatic heterocyclic compound having a specific structure and having a Log S value of −6.00 or less. 3. The chemically amplified positive-type photosensitive resin composition according to claim 2 , wherein Yis a group represented by the formula (c-a-1) claim 2 , and Ais a pyridine ring.4. The chemically amplified positive-type photosensitive resin composition according to claim 2 , wherein k is 2.5. The chemically amplified positive-type photosensitive resin composition according to claim 4 , wherein Ris an alkylene group having 1 or more and 10 or less carbon atoms which may be linear or branched claim 4 , a cycloalkyne group claim 4 , an arylene group claim 4 , or a divalent group which is a combination thereof.6. The chemically amplified positive-type photosensitive resin composition according to claim 1 , wherein Sub is a hydrocarbon group.7. The chemically amplified positive-type photosensitive resin composition according to claim 1 , wherein when claim 1 , after heating a coated film of the chemically amplified positive-type photosensitive resin composition at 130° C. for 5 minutes claim 1 , an operation of bringing the coated film into contact with 2.38% by mass aqueous solution of tetramethylammonium hydroxide at 23° C. for 30 seconds is carried out two times at intervals claim 1 , followed by rinsing with pure water claim 1 , a film loss speed is 0.1 μm/min or more and 0.5 μm/min or less.8. The chemically amplified positive-type photosensitive resin composition according to claim 1 , further comprising an alkali-soluble resin (D).9. The chemically amplified positive-type photosensitive resin composition according to claim 8 , ...

FORMING CONDUCTIVE VIAS USING A LIGHT GUIDE

The present invention provides a process and a structure of forming conductive vias using a light guide. In an exemplary embodiment, the process includes providing a via in a base material in a direction perpendicular to a plane of the base material, applying a photoresist layer to an interior surface of the via, inserting a light guide into the via, exposing, by the light guide, a portion of the photoresist layer to light, thereby resulting in an exposed portion of the photoresist layer and an unexposed portion of the photoresist layer, removing a portion of the photoresist layer, and plating an area of the via, where the photoresist has been removed, with a metal, thereby resulting in a portion of the via plated with metal and a portion of the via not plated with metal. 1. A process comprising:providing a via in a base material in a direction perpendicular to a plane of the base material;applying a photoresist layer to an interior surface of the via;inserting a light guide into the via; andexposing, by the light guide, a portion of the photoresist layer to light, thereby resulting in an exposed portion of the photoresist layer and an unexposed portion of the photoresist layer;removing a portion of the photoresist layer.2. The process of claim 1 , wherein a portion of an outer surface of the light guide is masked.3. The process of claim 1 , wherein the photoresist layer is a positive tone photoresist material.4. The process of claim 3 , wherein the removing comprises removing the exposed portion of the photoresist layer.5. The process of wherein the removing comprises washing the via with a photoresist developer.6. The process of claim 1 , wherein the photoresist layer is a negative tone photoresist material.7. The process of claim 6 , wherein the removing comprises removing the unexposed portion of the photoresist layer.8. A process comprising: 'wherein the via intersects the at least two copper lines;', 'providing a via in a base material, comprising at least two ...

POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of fluorosulfonic acid having an iodized or brominated aromatic ring, and recurring unite (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an add labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and dimensional uniformity, and forms a pattern of good profile after exposure and development. 1. A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of fluorosulfonic acid having an iodine or bromine-substituted aromatic ring , and recurring unite of at least one type selected from recurring unite (b1) having a carboxyl group substituted with an acid labile group and recurring unite (b2) having a phenolic hydroxyl group substituted with an acid labile group.5. The resist composition of claim 1 , further comprising an acid generator capable of generating a sulfonic acid claim 1 , sulfone imide or sulfone methide.6. The resist composition of claim 1 , further comprising an organic solvent.7. The resist composition of claim 1 , further comprising a dissolution inhibitor.8. The resist composition of claim 1 , further comprising a surfactant.9. A pattern forming process comprising the steps of applying the positive resist composition of to form a resist film on a substrate claim 1 , exposing the resist film to high-energy radiation claim 1 , and developing the exposed resist film in a developer.10. The process of wherein the high-energy radiation is ArF excimer laser of wavelength 193 nm or KrF excimer laser of wavelength 248 nm.11. The process of wherein the high-energy radiation is EB or EUV of wavelength 3 to 15 nm. This non-provisional application claims priority under 35 U.S.C. § 119(a) on Patent Application No. 2019-125147 filed in Japan on Jul. 4, 2019, the ...

POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of an iodized or brominated phenol, and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and dimensional uniformity, and forms a pattern of good profile after exposure and development. 1. A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of an iodine or bromine-substituted phenol and recurring units of at least one type selected from recurring units (b1) having a carboxyl group substituted with an acid labile group and recurring units (b2) having a phenolic hydroxyl group substituted with an acid labile group.5. The resist composition of claim 1 , further comprising an acid generator capable of generating a sulfonic acid claim 1 , sulfone imide or sulfone methide.6. The resist composition of claim 1 , further comprising an organic solvent.7. The resist composition of claim 1 , further comprising a dissolution inhibitor.8. The resist composition of claim 1 , further comprising a surfactant.9. A pattern forming process comprising the steps of applying the positive resist composition of to form a resist film on a substrate claim 1 , exposing the resist film to high-energy radiation claim 1 , and developing the exposed resist film in a developer.10. The process of wherein the high-energy radiation is ArF excimer laser of wavelength 193 nm or KrF excimer laser of wavelength 248 nm.11. The process of wherein the high-energy radiation is EB or EUV of wavelength 3 to 15 nm. This non-provisional application claims priority under 35 U.S.C. § 119(a) on Patent Application No. 2019-123502 filed in Japan on Jul. 2, 2019, the entire contents of which are hereby incorporated by reference.This ...

FORMING CONDUCTIVE VIAS USING A LIGHT GUIDE

The present invention provides a process and a structure of forming conductive vias using a light guide. In an exemplary embodiment, the process includes providing a via in a base material in a direction perpendicular to a plane of the base material, applying a photoresist layer to an interior surface of the via, inserting a light guide into the via, exposing, by the light guide, a portion of the photoresist layer to light, thereby resulting in an exposed portion of the photoresist layer and an unexposed portion of the photoresist layer, removing a portion of the photoresist layer, and plating an area of the via, where the photoresist has been removed, with a metal, thereby resulting in a portion of the via plated with metal and a portion of the via not plated with metal. 1. A process comprising:providing a via in a base material in a direction perpendicular to a plane of the base material;applying a photoresist layer to an interior surface of the via;inserting a light guide into the via;exposing, by the light guide, a portion of the photoresist layer to light, thereby resulting in an exposed portion of the photoresist layer and an unexposed portion of the photoresist layer;removing a portion of the photoresist layer; andplating an area of the via, where the photoresist has been removed, with a metal, thereby resulting in a portion of the via plated with metal and a portion of the via not plated with metal.2. The process of claim 1 , wherein a portion of an outer surface of the light guide is masked.3. The process of claim 1 , wherein the photoresist layer is a positive tone photoresist material.4. The process of claim 3 , wherein the removing comprises removing the exposed portion of the photoresist layer.5. The process of wherein the removing comprises washing the via with a photoresist developer.6. The process of claim 1 , wherein the photoresist layer is a negative tone photoresist material.7. The process of claim 6 , wherein the removing comprises removing the ...

PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS

A photoresist composition comprising: a first polymer comprising a first repeating unit comprising a hydroxy-aryl group and a second repeating unit comprising an acid-labile group; a second polymer comprising a first repeating unit comprising an acid-labile group, a second repeating unit comprising a lactone group, and a third repeating unit comprising a base-soluble group, wherein the base-soluble group has a pKa of less than or equal to 12, and wherein the base-soluble group does not comprise a hydroxy-substituted aryl group; a photoacid generator; and a solvent, wherein the first polymer and the second polymer are different from each other. 1. A photoresist composition comprising:a first polymer comprising a first repeating unit comprising a hydroxy-aryl group and a second repeating unit comprising an acid-labile group;a second polymer comprising a first repeating unit comprising an acid-labile group, a second repeating unit comprising a lactone group, and a third repeating unit comprising a base-soluble group, wherein the base-soluble group has a pKa of less than or equal to 12, and wherein the base-soluble group does not comprise a hydroxy-aryl group;a photoacid generator; anda solvent,wherein the first polymer and the second polymer are different from each other.5. The photoresist composition of claim 1 , wherein the first polymer or the second polymer comprises a repeating unit comprising the photoacid generator.6. The photoresist composition of claim 5 , further comprising a non-polymeric photoacid generator.7. The photoresist composition of claim 1 , further comprising a photo-decomposable quencher.8. The photoresist composition of claim 1 , further comprising a base-labile material comprising one or more base-labile groups claim 1 , wherein the base-labile material is different from the first polymer and the second polymer.9. The photoresist composition of claim 1 , wherein a weight ratio of the first polymer to the second polymer is from 1:4 to 4:1.10. A ...

A LITHOGRAPHIC PRINTING PLATE PRECURSOR

A method for making a lithographic printing plate is disclosed including the steps of (i) image-wise exposing a printing plate precursor to heat and/or IR radiation; said precursor including a support and a coating comprising a polymerisable compound, an infrared absorbing compound, a borate compound and a photoinitiator including a trihaloalkyl group; (ii) developing the exposed precursor by treating the coating of the precursor with a gum solution thereby removing the coating from the support at the non-image areas; and/or by mounting the precursor on a plate cylinder of a lithographic printing press and rotating the plate cylinder while feeding dampening liquid and/or ink to the precursor. 110-. (canceled)12. The method of claim 11 , wherein the image-wise exposing step induces a colour change in the image areas.13. The method of claim 11 , wherein the photoinitiator is an optionally substituted trihaloalkyl sulfone.14. The method of claim 13 , wherein the photoinitiator is an optionally substituted tribromomethyl aryl sulfone.15. The method of claim 14 , wherein the aryl group of the tribromomethyl aryl sulfone is substituted by at least one electron-donating group in an ortho or para position.17. The method of claim 11 , wherein M is Li claim 11 , Na claim 11 , or K.18. The method of claim 11 , wherein R claim 11 , R claim 11 , Rand Rare independently an optionally substituted aryl group or an optionally substituted heteroaryl group.19. The method of claim 11 , wherein the borate compound is present in the coating in an amount between 0.05% and 30% by weight. The invention relates to a novel lithographic printing plate precursor.Lithographic printing typically involves the use of a so-called printing master such as a printing plate which is mounted on a cylinder of a rotary printing press. The master carries a lithographic image on its surface and a print is obtained by applying ink to said image and then transferring the ink from the master onto a receiver ...

NANOIMPRINT LITHOGRAPHY PROCESS USING LOW SURFACE ENERGY MASK

A method is described for creating a modified mask with low surface energies for a nano-imprint lithography (NIL) imprinting process. The method includes applying a master mold to an imprint mask material to create an imprint mask. The method further includes modifying the imprint mask by applying a treatment to the imprint mask to cause a surface energy level of the imprint mask to fall below a sticking threshold. The modified imprint mask is applied to a nano-imprint lithography (NIL) material to create an imprinted NIL material layer. The surface energy level of the imprint mask causes a shape of the imprinted NIL material layer to be remain unchanged when the imprinted NIL material layer is detached from the modified imprint mask. 1. An imprinted nano-imprint lithography (NIL) material layer manufactured by:applying a master mold to an imprint mask material to create an imprint mask; applying a plasma treatment to the surface of the imprinted mask, and', 'after the plasma treatment is applied to the surface of the imprinted mask, exposing the surface of the imprinted mask to ultraviolet (UV) light; and, 'forming a graphitized carbon layer on a surface of the imprint mask to cause a surface energy of the modified imprint mask to fall below a sticking threshold byapplying the modified imprint mask to a nano-imprint lithography (NIL) material layer to create an imprinted NIL material layer, the surface energy level of the modified imprint mask causing a shape of the imprinted NIL material layer to remain unchanged when the imprinted NIL material layer is detached from the modified imprint mask.2. The NIL material layer of claim 1 , wherein the plasma treatment is an application of a fluorocarbon plasma to the surface of the imprint mask.3. The NIL material layer of claim 2 , wherein the fluorocarbon is composed of one of CF claim 2 , CHF claim 2 , CHF claim 2 , CHF claim 2 , CF claim 2 , CF claim 2 , CF claim 2 , and CF.4. The NIL material layer of claim 1 , ...

PHOTORESIST COMPOSITION FOR EXTREME ULTRAVIOLET AND METHOD OF FORMING PHOTORESIST PATTERN USING THE SAME

The disclosed embodiments provide a photoresist composition for extreme ultraviolet (EUV) and a method of forming a photoresist pattern using the same. The photoresist composition includes an out-of-band (OOB) absorbing material absorbing light of a wavelength of 100 nm to 300 nm. 1. A photoresist composition for extreme ultraviolet (EUV) , the photoresist composition comprising:photoresist resin of 1 wt % to 10 wt %;a photo acid generator of 0.1 wt % to 3 wt %;an out-of-band (OOB) absorbing material of 0.1 wt % to 3 wt %; anda solvent,wherein the OOB absorbing material is removed by a development solution.2. The photoresist composition of claim 1 , wherein the OOB absorbing material comprises:a first material including fluorine (F); anda second material absorbing light having a wavelength of 100 nm to 300 nm.3. The photoresist composition of claim 2 , wherein the first material has a self-assembly characteristic.4. The photoresist composition of claim 2 , wherein a content of the first material ranges from 20 wt % to 40 wt % in the OOB absorbing material claim 2 , andwherein a content of the second material ranges from 60 wt % to 80 wt % in the OOB absorbing material.8. The photoresist composition of claim 1 , wherein the development solution includes tetramethylammonium hydroxide (TMAH).9. The photoresist composition of claim 1 , further comprising:an organic base.10. The photoresist composition of claim 9 , wherein the organic base includes at least one of triethylamine claim 9 , triisobutylamine claim 9 , triisooctylamine claim 9 , triisodecylamine claim 9 , diethanolamine claim 9 , or triethanolamine.11. A method of forming a photoresist pattern claim 9 , the method comprising:applying a photoresist composition to a top surface of a substrate to form a photoresist layer;exposing the photoresist layer using extreme ultraviolet (EUV) light; andperforming a development process on the exposed photoresist layer to form a photoresist pattern on the substrate,wherein ...

RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN

Disclosed is a resin comprising a structural unit derived from a compound represented by formula (I′) and a structural unit having an acid-labile group: 2. The resin according to claim 1 , further comprising a structural unit having an acid-labile group.3. The resin according to claim 2 , further comprising a structural unit which is decomposed upon exposure to radiation to generate an acid.4. A resist composition comprising the resin according to and an acid generator.5. The resist composition comprising the resin according to .6. The resist composition according to claim 4 , further comprising a salt generating an acid having an acidity lower than that of an acid generated from the acid generator.7. A method for producing a resist pattern claim 4 , which comprises:{'claim-ref': {'@idref': 'CLM-00004', 'claim 4'}, '(1) a step of applying the resist composition according to on a substrate,'}(2) a step of drying the applied composition to form a composition layer,(3) a step of exposing the composition layer,(4) a step of heating the exposed composition layer, and(5) a step of developing the heated composition layer. The present invention relates to a resin, a resist composition containing the resin, a method for producing a resist pattern using the resist composition and the like.Patent Document 1 mentions a compound of the following structural formula, a resin including a structural unit having an acid-labile group, and a resist composition comprising an acid generator.Patent Document 1: JP 2015-180928 AThere has been required a composition capable of obtaining a resist pattern with satisfactory line edge roughness (LER).The present invention includes the following inventions.wherein, in formula (I′),Rand Reach independently represent an alkyl group having 1 to 6 carbon atoms which may have a halogen atom, a hydrogen atom or a halogen atom,Ar represents an aromatic hydrocarbon group having 6 to 24 carbon atoms which may have a substituent, andLand Leach ...

Negative Tone Developer Compatible Photoresist Composition and Methods of Use

Compositions and methods herein include negative tone developer compatible photoresist compositions and methods of using such compositions. This includes a positive tone photoresist that can be developed using negative tone developers in that unexposed portions of the positive tone photoresist are dissolvable by one or more negative tone developer solvents. One embodiment includes a negative tone developer compatible photoresist with little or no etch resistance. Non-resistive photoresist materials as described herein can include one or more radiation-sensitive attributes (for example, the photoresist can be patterned, de-protected, solubility shifted, interact with photo chemistries, and respond to exposure doses), except that these materials have effectively no etch resistance. Such compositions can be effectively free from components, functional groups, or additives that provide or increase etch resistivity to a wet or dry etch process. 1. A photoresist composition comprising:a positive tone resist polymer component;a resin component;an acid generator component that generates acid in response to exposure to actinic radiation;a solvent;a solubility shifting component that causes regions of the photoresist composition exposed to actinic radiation to become soluble to a positive tone developer, wherein regions unexposed to actinic radiation remain soluble to a negative tone developer; andwherein an amount of functional groups, included in the photoresist composition that increase etch resistance to a wet etch or dry etch process, ranges from 0.0% to 15% by weight based on a total weight of solid content in the photoresist composition.2. The composition of claim 1 , wherein an amount of functional groups claim 1 , included in the photoresist composition that increase etch resistance to a wet etch or dry etch process claim 1 , ranges from 0.0% to 10% by weight based on a total weight of solid content in the photoresist composition.3. The composition of claim 1 , ...

COMPOSITION FOR FORMING FINE RESIST PATTERN, AND PATTERN FORMATION METHOD USING SAME

The present invention provides a composition enabling to form a fine negative photoresist pattern less suffering from surface roughness, and also provides a pattern formation method employing that composition. The composition is used for miniaturizing a resist pattern by fattening in a process of forming a positive resist pattern from a chemically amplified positive-working type resist composition, and it contains a polymer comprising a repeating unit having an amino group, a solvent, and an acid. In the pattern formation method, the composition is cast on a positive photoresist pattern beforehand obtained by development and is then heated to form a fine pattern. 1. A fine pattern-forming composition used for miniaturizing a resist pattern by fattening in a process of forming a positive resist pattern from a chemically amplified positive-working type resist composition ,containinga polymer comprising a repeating unit having an amino group,a solvent, andan acid.2. The composition according to claim 1 , wherein said amino group is a primary amino group or a secondary amino group.3. The composition according to claim 1 , wherein said repeating unit is one selected from the group consisting of allylamine unit claim 1 , diallylamine unit claim 1 , and ethyleneimine unit.4. The composition according to claim 1 , wherein said polymer is one selected from the group consisting of polyvinylamine claim 1 , polyallylamine claim 1 , polydiallylamine claim 1 , polyethyleneimine claim 1 , and poly(allylamine-co-diallylamine).5. The composition according to claim 1 , wherein said acid is one selected from the group consisting of sulfonic acid claim 1 , carboxylic acid claim 1 , sulfuric acid claim 1 , nitric acid claim 1 , and mixtures thereof.6. The composition according to claim 5 , wherein said sulfonic acid is one selected from the group consisting of methanesulfonic acid claim 5 , ethanesulfonic acid claim 5 , 2-aminomethanesulfonic acid claim 5 , trifluoromethanesulfonic acid ...

Negative Tone Developer Compatible Photoresist Composition and Methods of Use

Compositions and methods herein include negative tone developer compatible photoresist compositions and methods of using such compositions. This includes a positive tone photoresist that can be developed using negative tone developers in that unexposed portions of the positive tone photoresist are dissolvable by one or more negative tone developer solvents. One embodiment includes a negative tone developer compatible photoresist with little or no etch resistance. Non-resistive photoresist materials as described herein can include one or more radiation-sensitive attributes (for example, the photoresist can be patterned, de-protected, solubility shifted, interact with photo chemistries, and respond to exposure doses), except that these materials have effectively no etch resistance. Such compositions can be effectively free from components, functional groups, or additives that provide or increase etch resistivity to a wet or dry etch process.

POLYMER AND POSITIVE RESIST COMPOSITION

Provided are a polymer that can be favorably used as a positive resist having a high γ value and a positive resist composition that can favorably form a high-resolution pattern. The polymer includes an α-methylstyrene unit and a methyl α-chloroacrylate unit, and has a molecular weight distribution (Mw/Mn) of less than 1.48. The positive resist composition contains the aforementioned polymer and a solvent. 1. A polymer comprising an α-methylstyrene unit and a methyl α-chloroacrylate unit , whereinthe polymer has a molecular weight distribution (Mw/Mn) of less than 1.48.2. The polymer according to claim 1 , whereina proportion of components having a molecular weight of less than 10,000 is no greater than 0.8%.3. The polymer according to claim 1 , whereina proportion of components having a molecular weight of less than 6,000 is no greater than 0.2%.4. A positive resist composition comprising the polymer according to and a solvent. The present disclosure relates to a polymer and a positive resist composition, and in particular relates to a polymer that is suitable for use as a positive resist and a positive resist composition that contains this polymer.Polymers that display increased solubility in a developer after undergoing main chain scission through irradiation with ionizing radiation, such as an electron beam, or short-wavelength light, such as ultraviolet light, are conventionally used as main chain scission-type positive resists in fields such as semiconductor production. (Hereinafter, the term “ionizing radiation or the like” is used to refer collectively to ionizing radiation and short-wavelength light.)PTL 1 discloses one example of a main chain scission-type positive resist having high sensitivity. The disclosed positive resist is formed from an α-methylstyrene-methyl α-chloroacrylate copolymer including an α-methylstyrene unit and a methyl α-chloroacrylate unit.PTL 1: JP H8-3636 BIn order to refine and increase the resolution of a pattern obtained using a ...

PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING THE SAME, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

A photosensitive resin composition including an ethylenically unsaturated compound, a resin having a polarity that increases by the action of an acid, and metal atoms, in which a total content of the metal atoms is from 1 ppt to 30 ppb with respect to a total mass of the photosensitive resin composition, and a content of the ethylenically unsaturated compound is from 0.0001% by mass to 1% by mass with respect to the total mass of the photosensitive resin composition, and a method for producing the same; and a resist film, a pattern forming method, and a method for manufacturing an electronic device, each of which uses the photosensitive resin composition. 1. A photosensitive resin composition comprising:an ethylenically unsaturated compound;a resin (A) having a polarity that increases by the action of an acid; anda metal atom,wherein a total content of the metal atoms is from 1 ppt to 30 ppb with respect to a total mass of the photosensitive resin composition, anda content of the ethylenically unsaturated compound is from 0.0001% by mass to 1% by mass with respect to the total mass of the photosensitive resin composition.2. The photosensitive resin composition according to claim 1 ,wherein the total content of the metal atoms is from 1 ppt to 10 ppb with respect to the total mass of the photosensitive resin composition.3. The photosensitive resin composition according to claim 1 ,wherein the total content of the metal atoms is from 1 ppt to 1,000 ppt with respect to the total mass of the photosensitive resin composition.4. The photosensitive resin composition according to claim 1 ,wherein the content of the ethylenically unsaturated compound is from 0.0001% by mass to 0.5% by mass with respect to the total mass of the photosensitive resin composition.5. The photosensitive resin composition according to claim 1 ,wherein the content of the ethylenically unsaturated compound is from 0.0001% by mass to 0.1% by mass with respect to the total mass of the photosensitive ...

POSITIVE-WORKING PHOTORESIST COMPOSITION, PATTERN PRODUCED THEREFROM, AND METHOD FOR PRODUCING PATTERN

The present invention provides a positive photoresist composition having excellent storage stability, sensitivity, developing properties, plating resistance, and heat resistance. More specifically, a specific dissolution inhibitor in the form of an oligomer having the same repeating unit structure as the resin contained in the photoresist composition is applied to said composition. 1. A positive photoresist composition comprising:a binder resin comprising a polymer resin having a first repeating unit and an acrylate-based resin having a second repeating unit, the polymer resin having an alkali-soluble functional group introduced into the first repeating unit;an oligomer compound having a functional group to which at least one protecting group is introduced; anda photoacid generator,wherein the protecting group is selected from the group of acetal, tert-butyloxycarbonyl, and t-butyl ester, andwherein the oligomer compound comprises the same first repeating unit as in the polymer resin or the same second repeating unit as in the acrylate-based resin.2. The positive photoresist composition according to claim 1 , wherein the polymer resin is at least one selected from the group of acrylic resin claim 1 , novolac resin claim 1 , and polyhydroxystyrene resin.3. The positive photoresist composition according to claim 1 , wherein the alkali-soluble functional group is a hydroxyl group or a carboxylic acid group.4. The positive photoresist composition according to claim 1 , wherein the oligomer compound has a weight average molecular weight in the range of 1500 to 5000.7. The positive photoresist composition according to claim 6 , wherein the chain transfer agent is introduced in the range of 5% to 15% by weight claim 6 , based on the total weight of the oligomer compound.8. The positive photoresist composition according to claim 6 , wherein the chain transfer agent is 3-mercapto propionic acid.10. A photoresist pattern produced from the positive photoresist composition ...

METHOD OF FORMING INSULATING LAYER

A method of forming an insulating layer on a first interconnect layer formed on a first surface of a wafer includes a step of coating an upper surface of the first interconnect layer and the upper surface of the wafer with a thermosetting resin, a step of modifying predetermined regions of the thermosetting resin into modified resin portions, a step of dissolving the modified resin portions modified in the modifying step with a chemical solution and thereafter removing the dissolved modified resin portions by supplying a cleaning fluid to the wafer, a step of accommodating the wafer into a hermetically sealable chamber, hermetically sealing the chamber, and making the chamber free of oxygen, and a step of heating the wafer accommodated in the chamber that has been made free of oxygen to thermoset the thermosetting resin. 1. A method of forming an insulating layer on a first interconnect layer formed on an upper surface of a wafer , comprising:a coating step of coating an upper surface of the first interconnect layer and the upper surface of the wafer with a photosensitive thermosetting resin;a modifying step of modifying predetermined regions of the photosensitive thermosetting resin into modified resin portions by irradiating the predetermined regions with light;a removing step of dissolving the modified resin portions modified in the modifying step with a chemical solution that is supplied thereto to dissolve the modified resin portions and thereafter removing the dissolved modified resin portions by supplying a cleaning fluid to the wafer;an oxygen-free environment creating step of accommodating the wafer from which the dissolved modified resin portions have been removed in the removing step into a hermetically sealable chamber, hermetically sealing the chamber, and making the chamber free of oxygen; anda thermosetting step of heating the wafer accommodated in the chamber that has been made free of oxygen in the oxygen-free environment creating step to thermoset ...

Photoexcitation method

A method and composition for enabling indirect photoexcitation whereby a large energy gap between energy levels in a second material is circumvented by a series of lower energy photoexcitations in a first material.

PHOTORESIST COMPOSITION FOR LINE DOUBLING

Photoresist compositions, methods of manufacturing the photoresist compositions, and methods of using the photoresist compositions are provided. In one implementation, the photoresist composition comprises a novolac (novolac) resin, a diazonaphthoquinone (DNQ) dissolution inhibitor, a bis(azide) crosslinker, and a casting solvent. In one implementation, the bis(azide) crosslinker absorbs at wavelengths in a range between 325 nanometers and 400 nanometers. In one implementation, the bis(azide) crosslinker is an aromatic bi(azide) crosslinker. 1. A photoresist composition , comprising:a novolac resin;a diazonaphthoquinone (DNQ) dissolution inhibitor;a bis(azide) crosslinker; anda casting solvent.2. The photoresist composition of claim 1 , wherein the bis(azide) crosslinker absorbs at wavelengths in a range between 325 nanometers and 400 nanometers.3. The photoresist composition of claim 1 , wherein the bis(azide) crosslinker is an aromatic bi(azide) crosslinker.444. The photoresist composition of claim 3 , wherein the aromatic bi(azide) crosslinker is selected from p-phenylenebisazide claim 3 , 4 claim 3 ,4′-diazidobiphenyl claim 3 , claim 3 ,′-diazido-3 claim 3 ,3′-dimethylbiphenyl claim 3 , 4 claim 3 ,4′-diazidobiphenylmethane claim 3 , 3 claim 3 ,3′-dichloro-4 claim 3 ,4′-diazidobiphenylmethane claim 3 , 4 claim 3 ,4′-diazidobiphenyl ether claim 3 , 4 claim 3 ,4′-diazidobiphenyl sulfide claim 3 , 4 claim 3 ,4′-diazidobiphenyl disulfide claim 3 , 4 claim 3 ,4′-diazidobiphenyl sulfone claim 3 , 3 claim 3 ,3′-diszidobiphenyl sulfone claim 3 , 4 claim 3 ,4′-diazidobenzophenone claim 3 , 4 claim 3 ,4′-diazidobenzyl claim 3 , 4 claim 3 ,4′-diazidostilbene claim 3 , 4 claim 3 ,4′-diazidochalcone claim 3 , 2 claim 3 ,6-bis(4-azidobenzylidene)cyclohexanone claim 3 , 2 claim 3 ,6-bis(4-azidobenzylidene)-4-methylcyclohexanone claim 3 , 2 claim 3 ,7-diazidofluorene claim 3 , or a combination thereof.5. The photoresist composition of claim 1 , wherein the casting solvent is ...

PHOTOSENSITIVE RESIN COMPOSITION

Disclosed are photosensitive resin compositions capable of forming positive resin films with excellent heat shape retention. The photosensitive resin compositions comprises a polymer having a monomer unit represented by the following general formula (I) and a polyamideimide: 2. The photosensitive resin composition according to claim 1 , wherein the polyamideimide is a polyamideimide having a branched structure.3. The photosensitive resin composition according to claim 1 , wherein the polyamideimide has a number-average molecular weight of 1 claim 1 ,000 or more and 30 claim 1 ,000 or less.4. The photosensitive resin composition according to claim 1 , wherein the polymer is a copolymer further having a (meth)acrylate monomer unit.5. The photosensitive resin composition according to claim 1 , wherein a content ratio by mass of the polymer to the polyamideimide (polymer:polyamideimide) is 90:10 to 70:30.6. The photosensitive resin composition according to claim 1 , further comprising a photoactive compound and a cross-linker. The present disclosure relates to photosensitive resin compositions and, in particular, photosensitive resin compositions capable of forming positive resist films with excellent heat shape retention.Organic electroluminescent elements (organic EL electroluminescent elements), an example of electronic components, are provided with a variety of resin films, such as protective films for preventing degradation and damage, planarizing films for planarizing the element surface and interconnections, electric insulating films for ensuring electrical insulation, and pixel separation films for separating light emitter portions.Similarly, micro light-emitting diodes (LEDs) and organic light-emitting diode (OLEDs), other examples of electronic components, are provided with a variety of resin films, such as protective films for preventing degradation and damage, electric insulating films for ensuring electrical insulation, and passivation films for preventing ...

Composition for resist underlayer film formation, resist underlayer film and formation method thereof, and patterned substrate production method

A composition for resist underlayer film formation contains: a compound having a partial structure represented by the following formula (1); and a solvent. In the formula (1): X represents a group represented by formula (i), (ii), (iii) or (iv). In the formula (i): R 1 and R 2 each independently represent a hydrogen atom, a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms, or a substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms provided that at least one of R 1 and R 2 represents the substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or the substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms; or R 1 and R 2 taken together represent a part of a ring structure having 3 to 20 ring atoms together with the carbon atom to which R 1 and R 2 bond.

METHOD FOR PRODUCING PLATED FORMED PRODUCT

A method for producing a plated formed product includes: a step (1) of forming on a substrate of the substrate having a metal film a resin film of a photosensitive resin composition containing a sulfur-containing compound having at least one selected from a mercapto group, a sulfide bond, and a polysulfide bond; a step (2) of exposing the resin film; a step (3) of developing the exposed resin film to form a resist pattern film; a step (4) of performing plasma treatment of a substrate having the resist pattern film on the metal film with oxygen-containing gas; and a step (5) of performing, after the plasma treatment, plating treatment with the resist pattern film as a mold. 1: A method for producing a plated formed product , the method comprising:a step (1) of forming on a substrate of the substrate having a metal film a resin film of a photosensitive resin composition containing a sulfur-containing compound having at least one selected from a mercapto group, a sulfide bond, and a polysulfide bond;a step (2) of exposing the resin film;a step (3) of developing the exposed resin film to form a resist pattern film;a step (4) of performing plasma treatment of a substrate having the resist pattern film on the metal film with oxygen-containing gas; anda step (5) of performing, after the plasma treatment, plating treatment with the resist pattern film as a mold.2: The method for producing a plated formed product according to claim 1 , wherein the photosensitive resin composition further contains polymer (A) having an acid dissociative group and photoacid generator (B).3: The method for producing a plated formed product according to claim 2 , wherein a content of the sulfur-containing compound is 0.2 to 2.0 parts by mass claim 2 , with respect to 100 parts by mass of a polymer component including polymer (A) having an acid dissociative group included in the photosensitive resin composition.4: The method for producing a plated formed product according to claim 1 , wherein the ...

PHOTOSENSITIVE RESIN COMPOSITION, LITHOGRAPHIC PRINTING PLATE PRECURSOR AND METHOD FOR PRODUCING LITHOGRAPHIC PRINTING PLATE

There is provided a photosensitive resin composition which enables production of a lithographic printing plate precursor having a non-image portion which has good solubility in an alkali aqueous solution and which enables production of a lithographic printing plate having excellent printing durability and excellent chemical resistance, a lithographic printing plate precursor obtained by using the photosensitive resin composition, and a method for producing a lithographic printing plate. 2. The photosensitive resin composition according to claim 1 ,wherein the polymer compound has the constitutional unit represented by Formula B-1 or B-6 as the constitutional unit B.3. The photosensitive resin composition according to claim 1 ,wherein the polymer compound has the constitutional unit represented by Formula B-1 as the constitutional unit B.9. The photosensitive resin composition according to claim 6 ,wherein the ratio of the constitutional unit A to the total mass of the constitutional unit A and the constitutional unit A′ in the polymer compound is 5% by mass to 90% by mass.10. The photosensitive resin composition according to claim 1 ,{'sub': 1', '2, 'wherein Rand Rare arylene groups.'}11. The photosensitive resin composition according to claim 7 ,{'sub': 1', '2, 'wherein Rand Rare arylene groups.'}12. The photosensitive resin composition according to claim 8 ,{'sub': 1', '2, 'wherein Rand Rare arylene groups.'}13. The photosensitive resin composition according to claim 1 ,wherein the polymer compound further has an alkyleneoxy group in the main chain.14. A lithographic printing plate precursor claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'an image recording layer including the photosensitive resin composition according to .'}15. The lithographic printing plate precursor according to which is a positive type.16. The lithographic printing plate precursor according to claim 14 ,wherein the image recording layer is formed on a support having a ...

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, RESIST-COATED MASK BLANK, PHOTOMASK AND PATTERN FORMING METHOD, AND METHOD FOR PRODUCING ELECTRONIC DEVICE USING THEM, AND ELECTRONIC DEVICE

There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing: a resin (A) containing a repeating unit represented by a specific formula (1), and an ionic compound (B) represented by a specific formula (2), a resist film formed by using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method including: (a) a step of forming the resist film, (b) a step of exposing the film, and (c) a step of developing the exposed film using a developer to form a pattern.

Pattern forming method and method for manufacturing electronic device

Provide are a pattern forming method including a step (1) of forming a film using an actinic ray-sensitive or radiation-sensitive resin composition including a resin having an acid-decomposable repeating unit capable of decomposing by the action of an acid to generate an acid having a pKa of 3.0 or less, a step (2) of exposing the film using actinic rays or radiation, and a step (3) of carrying out development using a developer including an organic solvent after the exposure to form a negative tone pattern; and a method for manufacturing an electronic device, including the pattern forming method.

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

An actinic ray-sensitive or radiation-sensitive resin composition includes: a resin, in which the actinic ray-sensitive or radiation-sensitive resin composition has a concentration of a solid content of 10% by mass or more, and in which the resin includes: a repeating unit A which is a repeating unit derived from a monomer allowing a homopolymer formed therefrom to have a glass transition temperature of 50° C. or lower, and a repeating unit B which is a repeating unit having an acid-decomposable group, a content of the repeating unit B is 20% by mole or less with respect to all the repeating units in the resin, and at least one of the repeating unit contained in the resin is a repeating unit having an aromatic ring. 1. An actinic ray-sensitive or radiation-sensitive resin composition , comprising:a resin,wherein the actinic ray-sensitive or radiation-sensitive resin composition has a concentration of a solid content of 10% by mass or more, andwherein the resin includes:a repeating unit A which is a repeating unit derived from a monomer allowing a homopolymer formed therefrom to have a glass transition temperature of 50° C. or lower, anda repeating unit B which is a repeating unit having an acid-decomposable group,a content of the repeating unit B is 20% by mole or less with respect to all the repeating units in the resin, andat least one of the repeating unit contained in the resin is a repeating unit having an aromatic ring.2. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,wherein a content of the repeating unit A is 5% by mole or more with respect to all the repeating units in the resin.3. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,wherein a content of the repeating unit A is 10% by mole or more with respect to all the repeating units in the resin.4. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,wherein the repeating unit A is a ...

PHOTORESIST COMPOSITION FOR THICK FILM AND METHOD OF FORMING THICK FILM PHOTORESIST PATTERN

A thick film photoresist composition for forming a thick film photoresist layer on a support, the photoresist composition including: a resin which exhibits changed solubility in a developing solution by the action of acid, an acid generator which generates acid by exposure, an additive, and a solvent, the additive including a compound having at least one polar group selected from the group consisting of a hydroxy group, an amino group, a mercapto group, a carboxy group and a sulfonic acid group, and the amount of the additive, relative to 100 parts by weight of the solvent being 5 to 30 parts by weight. 1. A thick film photoresist composition for forming a thick film photoresist layer on a support , the photoresist composition comprising:a resin (A) which exhibits changed solubility in a developing solution by the action of acid,an acid generator (B) which generates acid by exposure,an additive (E), anda solvent (S),wherein the additive (E) includes a compound having at least one polar group selected from the group consisting of a hydroxy group, an amino group, a mercapto group, a carboxy group and a sulfonic acid group, andthe amount of the additive (E), relative to 100 parts by weight of the solvent (S) is 5 to 30 parts by weight.2. The photoresist composition according to claim 1 , wherein the composition forms a thick film photoresist layer having a film thickness of 10 to 150 μm.3. The photoresist composition according to claim 1 , wherein the compound having at least one polar group is a compound having at least one hydroxy group.5. The photoresist composition according to claim 4 , wherein claim 4 , in formula (1) claim 4 , p is 3.6. The photoresist composition according to claim 1 , further comprising an acid diffusion control agent (D).7. A method of forming a thick film photoresist pattern claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'using the photoresist composition of to form a thick film photoresist layer on a substrate;'} ...

METHOD FOR PRODUCING POLYIMIDE PRECURSOR, METHOD FOR PRODUCING PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING PATTERN CURED PRODUCT, METHOD FOR PRODUCING INTERLAYER INSULATING FILM, COVER COAT LAYER OR SURFACE PROTECTIVE FILM, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT

A method for producing a polyimide precursor having a structural unit represented by the following formula (1), 3. A method for producing a photosensitive resin composition comprising: producing a polyimide precursor by the method according to ; andmixing the polyimide precursor, (B) a polymerizable monomer, and (C) a photopolymerization initiator to obtain a photosensitive resin composition.4. A method for producing a pattern cured product comprising the following steps: producing a photosensitive resin composition by the method according to ;coating the photosensitive resin composition on a substrate and drying to form a photosensitive resin film;pattern-exposing the photosensitive resin film to obtain a resin film;developing the resin film after the pattern exposure using an organic solvent to obtain a pattern resin film; andheat-treating the pattern resin film.5. The method for producing a pattern cured product according to claim 4 , wherein a temperature of the heat treatment is 200° C. or less.6. A method for producing an interlayer insulating film claim 4 , a cover coat layer or a surface protective film claim 4 , which is produced using the pattern cured product produced by the method according to .7. A method for producing an electronic component claim 6 , which is produced using the interlayer insulating film claim 6 , the cover coat layer or the surface protective film produced by the method according to . The invention relates to a method for producing a polyimide precursor, a method for producing a photosensitive resin composition, a method for producing a pattern cured product, a method for producing an interlayer insulating film, a cover coat layer or a surface protective film, and a method for producing an electronic component.In recent years, the miniaturization of transistors which has supported the enhancement of the performance of computers has come to the limit of scaling law, and a laminated device structure in which semiconductor elements are ...

System and method of planarization control using a cross-linkable material

Described herein are technologies to facilitate device fabrication, especially those that involve spin coatings of a substrate. More particularly, technologies described herein facilitate the planarization (i.e., flatness) of spin coatings during the device fabrication to form a uniformly planar film or layer on the substrate. This abstract itself is not intended to limit the scope of this patent. The scope of the present invention is pointed out in the appending claims.

COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION AND PATTERN FORMATION METHOD

A composition for resist underlayer film formation, containing a compound represented by the following formula (1). 1. A composition for resist underlayer film formation , comprising a compound represented by the following formula (1):{'br': None, 'sub': x', 'y, 'sup': '1', '[LTe(OR)/]\u2003\u2003(1)'}{'sup': 1', '1', '1, 'wherein L is a ligand other than OR; Ris any of a hydrogen atom, a substituted or unsubstituted, linear alkyl group having 1 to 20 carbon atoms or branched or cyclic alkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 20 carbon atoms and a substituted or unsubstituted alkynyl group having 2 to 20 carbon atoms; x is an integer of 0 to 6; y is an integer of 0 to 6; a total of x and y is 1 to 6; when x is 2 or more, a plurality of L may be the same or different; and when y is 2 or more, a plurality of Rmay be the same or different.'}2. The composition for resist underlayer film formation according to claim 1 , wherein claim 1 , in the compound represented by the above formula (1) claim 1 , x is an integer of 1 to 6.3. The composition for resist underlayer film formation according to claim 1 , wherein claim 1 , in the compound represented by the above formula (1) claim 1 , y is an integer of 1 to 6.4. The composition for resist underlayer film formation according to claim 1 , wherein claim 1 , in the compound represented by the above formula (1) claim 1 , Ris a substituted or unsubstituted claim 1 , linear alkyl group having 1 to 6 carbon atoms or branched or cyclic alkyl group having 3 to 6 carbon atoms.5. The composition for resist underlayer film formation according to claim 1 , wherein claim 1 , in the compound represented by the above formula (1) claim 1 , L is a bi- or higher-dentate ligand.6. The composition for resist underlayer film formation according to claim 1 , wherein claim 1 , in the compound represented by the above ...

SOLUBLE POLYIMIDES AND DIIMIDES FOR SPIN-ON CARBON APPLICATIONS

A high-temperature-stable spin-on-carbon (“SOC”) material that fills topography features on a substrate while planarizing the surface in a one-step, thin layer coating process is provided. The material comprises low molecular weight polyimides or diimides that are pre-imidized in solution rather than on the wafer. The SOC layers can survive harsh CVD conditions and are also SC1 resistant, especially on TiN and SiOx surfaces. 1. A method of forming a microelectronic structure , said method comprising:optionally forming one or more intermediate layers on a substrate surface, there being an uppermost intermediate layer on said substrate surface, if one or more intermediate layers are present;applying a composition to said uppermost intermediate layer, if present, or to said substrate surface, if no intermediate layers are present, said composition comprising one or both of a diimide or a polyimide dissolved or dispersed in a solvent system; and{'sup': '2', 'heating said composition to form a carbon-rich layer, said carbon-rich layer having the property of presenting fewer than about 0.1 defects/cmof layer surface area if subjected to a CVD survivability test.'}2. The method of claim 1 , further comprising:optionally forming one or more additional intermediate layers on said carbon-rich layer, there being an uppermost additional intermediate layer on said substrate surface, if one or more additional intermediate layers are present;applying an imaging layer to said one or more additional intermediate layers, if present, or to said carbon-rich layer, if no additional intermediate layers are present;patterning said imaging layer to form a pattern therein;transferring said pattern to said one or more additional intermediate layers on said carbon-rich layer, if present, and to said carbon-rich layer; andcontacting said carbon-rich layer with SC1.3. The method of claim 1 , wherein said substrate surfaces comprises an intermediate layer claim 1 , and said intermediate layer is ...

COLORING COMPOSITION, FILM, COLOR FILTER, PATTERN FORMING METHOD, METHOD OF MANUFACTURING COLOR FILTER, SOLID IMAGE PICKUP ELEMENT, AND INFRARED SENSOR

A coloring composition includes colorants, polymerizable compounds, and a resin, in which a ratio P/M of a mass P of the colorants to a mass M of the polymerizable compounds is 0.05 to 0.35, a content of the polymerizable compounds is 25 to 65 mass % with respect to a total solid content of the coloring composition, a ratio A/B of a minimum value A of an absorbance in a wavelength range of 400 nm or longer and shorter than 580 nm to a minimum value B of an absorbance in a wavelength range of 580 nm to 770 nm is 0.3 to 3, and a ratio C/D of a minimum value C of an absorbance in a wavelength range of 400 nm to 750 nm to a maximum value D of an absorbance in a wavelength range of 850 nm to 1300 nm is 5 or higher. 1. A coloring composition comprising:colorants;polymerizable compounds; anda resin,wherein a ratio P/M of a mass P of the colorants to a mass M of the polymerizable compounds is 0.05 to 0.35,a content of the polymerizable compounds is 25 to 65 mass % with respect to a total solid content of the coloring composition,a ratio A/B of a minimum value A of an absorbance in a wavelength range of 400 nm or longer and shorter than 580 nm to a minimum value B of an absorbance in a wavelength range of 580 nm to 770 nm is 0.3 to 3, anda ratio C/D of a minimum value C of an absorbance in a wavelength range of 400 nm to 750 nm to a maximum value D of an absorbance in a wavelength range of 850 nm to 1300 nm is 5 or higher.2. The coloring composition according to claim 1 ,wherein a ratio M/B of the mass M of the polymerizable compounds to a mass B of the resin is 0.4 to 3.0.3. A coloring composition comprising:colorants; andpolymerizable compounds,wherein a ratio P/M of a mass P of the colorants to a mass M of the polymerizable compounds is 0.05 to 0.35,a content of the polymerizable compounds is 25 to 65 mass % with respect to a total solid content of the coloring composition,the colorants include at least a yellow colorant and a blue colorant,a ratio (yellow colorant/all ...

POLYMER AND POSITIVE RESIST COMPOSITION

Provided are a polymer that can be favorably used as a positive resist having a low film reduction rate in a state of low irradiation with ionizing radiation or the like and a positive resist composition that can favorably form a high-resolution pattern. The polymer includes an α-methylstyrene unit and a methyl α-chloroacrylate unit, and the proportion of components having a molecular weight of less than 6,000 in the polymer is no greater than 0.5%. The positive resist composition contains the aforementioned polymer and a solvent. 1. A polymer comprising an α-methylstyrene unit and a methyl α-chloroacrylate unit , whereina proportion of components having a molecular weight of less than 6,000 is no greater than 0.5%.2. The polymer according to claim 1 , whereina proportion of components having a molecular weight of less than 10,000 is no greater than 0.5%.3. The polymer according to claim 1 , whereina proportion of components having a molecular weight of greater than 80,000 is at least 15%.4. The polymer according to claim 1 , having a weight average molecular weight (Mw) of at least 55 claim 1 ,000.5. A positive resist composition comprising the polymer according to and a solvent. The present disclosure relates to a polymer and a positive resist composition, and in particular relates to a polymer that is suitable for use as a positive resist and a positive resist composition that contains this polymer.Polymers that display increased solubility in a developer after undergoing main chain scission through irradiation with ionizing radiation, such as an electron beam, or short-wavelength light, such as ultraviolet light, are conventionally used as main chain scission-type positive resists in fields such as semiconductor production. (Hereinafter, the term “ionizing radiation or the like” is used to refer collectively to ionizing radiation and short-wavelength light.)PTL 1 discloses one example of a main chain scission-type positive resist having high sensitivity. The ...

POLYMER AND POSITIVE RESIST COMPOSITION

Provided are a polymer that can be favorably used as a positive resist having high sensitivity and a positive resist composition that can favorably form a resist film having excellent sensitivity. The polymer includes an α-methylstyrene unit and a methyl α-chloroacrylate unit, and the proportion of components having a molecular weight of greater than 80,000 in the polymer is no greater than 6.0%. The positive resist composition contains the aforementioned polymer and a solvent. 1. A polymer comprising an α-methylstyrene unit and a methyl α-chloroacrylate unit , whereina proportion of components having a molecular weight of greater than 80,000 is no greater than 6.0%.2. The polymer according to claim 1 , having a molecular weight distribution (Mw/Mn) of at least 1.25.3. A positive resist composition comprising the polymer according to and a solvent.4. A positive resist composition comprising the polymer according to and a solvent. The present disclosure relates to a polymer and a positive resist composition, and in particular relates to a polymer that is suitable for use as a positive resist and a positive resist composition that contains this polymer.Polymers that display increased solubility in a developer after undergoing main chain scission through irradiation with ionizing radiation, such as an electron beam, or short-wavelength light, such as ultraviolet light, are conventionally used as main chain scission-type positive resists in fields such as semiconductor production. (Hereinafter, the term “ionizing radiation or the like” is used to refer collectively to ionizing radiation and short-wavelength light.)PTL 1 discloses one example of a main chain scission-type positive resist having high sensitivity. The disclosed positive resist is formed from an α-methylstyrene-methyl α-chloroacrylate copolymer including an α-methylstyrene unit and a methyl α-chloroacrylate unit.PTL 1: JP H8-3636 BIn order to refine and increase the resolution of a pattern obtained using a ...

POLYMER AND POSITIVE RESIST COMPOSITION

Provided are a polymer that can be favorably used as a positive resist having a low film reduction rate under low irradiation, a high y value, and high sensitivity, and a positive resist composition that can efficiently form a high-resolution pattern. The polymer includes an a-methylstyrene unit and a methyl α-chloroacrylate unit, and has a molecular weight distribution (Mw/Mn) of less than 1.48. In the polymer, the proportion of components having a molecular weight of less than 6,000 is no greater than 0.5% and the proportion of components having a molecular weight of greater than 80,000 is no greater than 6.0%. The positive resist composition contains the aforementioned polymer and a solvent. 1. A polymer comprising an α-methylstyrene unit and a methyl α-chloroacrylate unit , whereinthe polymer has a molecular weight distribution (Mw/Mn) of less than 1.48,a proportion of components having a molecular weight of less than 6,000 is no greater than 0.5%, anda proportion of components having a molecular weight of greater than 80,000 is no greater than 6.0%.2. The polymer according to claim 1 , whereina proportion of components having a molecular weight of less than 10,000 is no greater than 0.8%.3. The polymer according to claim claim 1 , having a weight average molecular weight (Mw) of at least 30 claim 1 ,000.4. The polymer according to claim 1 , whereina proportion of components having a molecular weight of greater than 100,000 is at least 0.5%.5. A positive resist composition comprising the polymer according to and a solvent. The present disclosure relates to a polymer and a positive resist composition, and in particular relates to a polymer that is suitable for use as a positive resist and a positive resist composition that contains this polymer.Polymers that display increased solubility in a developer after undergoing main chain scission through irradiation with ionizing radiation, such as an electron beam, or short-wavelength light, such as ultraviolet light, ...

Photoresist compositions and pattern formation methods

Disclosed herein is a photoresist composition, comprising a first polymer formed by free radical polymerization, the first polymer comprising polymerized units formed from a monomer comprising an ethylenically unsaturated double bond and an acid-labile group; a photoacid generator; a quencher of formula (1): wherein: R 1 is independently a hydrogen atom, C 1 -C 20 linear, C 3 -C 20 branched, or C 3-20 cyclic alkyl, the alkyl optionally comprising an —O— group other than at an alpha-position with respect to the amide C(O), or C 6 -C 20 aryl; R 2 is independently a hydrogen atom, C 1 -C 20 linear, C 3 -C 20 branched, or C 3 -C 20 cyclic alkyl, or C 6 -C 20 aryl; L is C 1 -C 20 linear or C 3 -C 20 branched alkylene comprising one or more heteroatom-containing groups independently selected from —O—, —S—, or —N(R 3 )—, wherein R 3 is selected from a hydrogen atom or C 1 -C 20 linear or C 3 -C 20 branched or cyclic alkyl; each of R 1 , R 2 , and L may independently be substituted or unsubstituted; wherein the quencher is free of crosslinkable groups; and a solvent.

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

An actinic ray-sensitive or radiation-sensitive resin composition includes an acid-decomposable resin and a compound that generates an acid upon irradiation with actinic rays or radiation, in which the compound that generates an acid upon irradiation with actinic rays or radiation includes one or more compounds selected from the group consisting of compounds (I) to (III), and a content of the compounds selected from the group consisting of the compounds (I) to (III) is more than 20.0% by mass with respect to a total solid content in the composition. 1. An actinic ray-sensitive or radiation-sensitive resin composition comprising:a resin having a polarity that increases due to decomposition by an action of an acid; anda compound that generates an acid upon irradiation with actinic rays or radiation,wherein the compound that generates an acid upon irradiation with actinic rays or radiation includes one or more compounds selected from the group consisting of the following compounds (I) to (III), anda content of the compounds selected from the group consisting of the compounds (I) to (III) is more than 20.0% by mass with respect to a total solid content in the composition,compound (I): a compound having each one of the following structural moiety X and the following structural moiety Y, the compound generating an acid including the following first acidic moiety derived from the following structural moiety X and the following second acidic moiety derived from the following structural moiety Y upon irradiation with actinic rays or radiation,{'sub': 1', '1', '1, 'sup': −', '+, 'structural moiety X: a structural moiety which consists of an anionic moiety A and a cationic moiety M, and forms a first acidic moiety represented by HAupon irradiation with actinic rays or radiation'}{'sub': 2', '2', '2, 'sup': −', '+, 'structural moiety Y: a structural moiety which consists of an anionic moiety A and a cationic moiety M, and forms a second acidic moiety represented by HA, having a ...

PHOTOSENSITIVE RESIN COMPOSITION, SOLDER RESIST FILM USING SAID PHOTOSENSITIVE RESIN COMPOSITION, FLEXIBLE PRINTED CIRCUIT AND IMAGE DISPLAY DEVICE

The present invention provides a photosensitive resin composition with which a dry resist film can be obtained, the dry resist film exhibiting excellent storage stability and migration resistance in thickness direction thereof. This photosensitive resin composition comprises: a photosensitive prepolymer having a carboxyl group and an ethylenically unsaturated group; a photopolymerization initiator; and a thermosetting agent. The thermosetting agent is a polycarbodiimide compound represented by formula (1), in which a carbodiimide group is protected by an amino group that dissociates at temperatures of 80° C. or greater. The polycarbodiimide compound has a weight average molecular weight of 300-3000, and a carbodiimide equivalent weight of 150-600. In formula (1), R, R, X, X, and n are as defined in the description. 2. The photosensitive resin composition according to claim 1 ,wherein the carbodiimide of the polycarbodiimide compound has 2 to 5 functional groups.3. The photosensitive resin composition according to claim 1 ,wherein the carbodiimide equivalent of the polycarbodiimide compound is 0.9 to 1.3 equivalents with respect to the carboxyl group of the photosensitive prepolymer.4. The photosensitive resin composition according to claim 1 , used for a solder resist film.5. A solder resist film formed using the photosensitive resin composition according to .6. A flexible printed circuit comprising:an insulating layer;a wiring pattern made of a conductive material and provided on the insulating layer; anda solder resist layer provided on the wiring pattern,{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'wherein the solder resist layer is formed using the photosensitive resin composition according to .'}7. The flexible printed circuit according to claim 6 , further comprising:a shield layer on the solder resist layer, the shield layer containing a conductive material,{'sup': '7', 'wherein the flexible printed circuit keeps a resistance value of 1.0×10Ω or more ...

STABLE PHOTORESIST COMPOSITIONS COMPRISING ORGANOSULPHUR COMPOUNDS

The present invention provides a photoresist composition Part A, comprising a carboxylic functional ethylenically unsaturated resin having an acid value equal to or greater than 10 mg KOH/g, and an organosulphur compound. The photoresist composition may further comprise a Part B, comprising a resin that may react with the carboxylic groups of Part A. The photoresist compositions are shelf-stable, alkali developable, and provide cured resists with improved surface- and through-cure, improved gloss, and reduced undercut and overcut. 1. An energy curable thermosetting resin composition comprising:a) a carboxylic functional ethylenically unsaturated resin; andb) an organosulphur compound;wherein the acid value of the composition is equal to or greater than 10 mg KOH/g; andwherein the composition is developable with an aqueous alkali solution, such that the uncured composition is removable by an aqueous alkali solution.2. (canceled)3. (canceled)4. The composition of claim 1 , wherein the organosulphur compound is a thiol or thioether.5. The composition of claim 4 , wherein the thiol is a mercaptan.6. The composition of claim 1 , further comprising a resin that is reactive with the carboxylic acid of the carboxylic functional ethylenically unsaturated resin.7. The composition of claim 6 , wherein the resin that is reactive with the carboxylic acid of the carboxylic functional ethylenically unsaturated resin is selected from the group consisting of polyepoxides claim 6 , polyoxetane claim 6 , an aminoresin claim 6 , a blocked isocyanate claim 6 , polyoxazoline claim 6 , and polycarbodiimide.8. The composition of claim 6 , prepared as a 2-pack system claim 6 , wherein:a) Part A comprises a carboxylic functional ethylenically unsaturated resin and an organosulphur compound, wherein the acid value of Part A is equal to or greater than 10 mg KOH/g; andb) Part B comprises a resin that is reactive with the carboxylic acid of Part A.9. (canceled)10. (canceled)11. The composition ...