ВОДНАЯ ПОЛИРУЮЩАЯ КОМПОЗИЦИЯ И СПОСОБ ХИМИКО-МЕХАНИЧЕСКОГО ПОЛИРОВАНИЯ МАТЕРИАЛОВ ПОДЛОЖЕК ДЛЯ ЭЛЕКТРИЧЕСКИХ, МЕХАНИЧЕСКИХ И ОПТИЧЕСКИХ УСТРОЙСТВ

Изобретение направлено на водную полирующую композицию, которая особенно подходит для полирования материалов подложек для электрических, механических и оптических устройств. Композиция содержит (A) абразивные частицы, которые положительно заряжены, когда диспергированы в водной среде, имеющей pH в интервале от 3 до 9; (B) водорастворимые или диспергируемые в воде компоненты, выбранные из (b1) алифатических и циклоалифатических оксикарбоновых кислот, где молярное отношение гидроксильных групп к группам карбоновых кислот составляет по меньшей мере 2; (b2) сложных эфиров или лактонов оксикарбоновых кислот (b1), имеющих по меньшей мере две гидроксильные группы; и (b3) их смесей; и (C) водорастворимые или диспергируемые в воде полимерные компоненты, выбранные из (c1) линейных и разветвленных полимеров алкиленоксидов; (c2) линейных и разветвленных, алифатических и циклоалифатических поли(N-виниламидных) полимеров; и (c3) катионных полимерных флокулянтов, имеющих среднемассовую молекулярную массу ...

ВОДНАЯ ПОЛИРУЮЩАЯ КОМПОЗИЦИЯ И СПОСОБ ХИМИКО-МЕХАНИЧЕСКОГО ПОЛИРОВАНИЯ ПОДЛОЖЕК ДЛЯ ЭЛЕКТРИЧЕСКИХ, МЕХАНИЧЕСКИХ И ОПТИЧЕСКИХ УСТРОЙСТВ

Изобретение относится к водной полирующей композиции, имеющей pH от 3 до 11. Композиция содержит (А) по меньшей мере один тип абразивных частиц, которые положительно заряжены при диспергировании в водной среде, свободной от компонента (В) и имеющей pH в интервале от 3 до 9, что подтверждается электрофоретической подвижностью. Абразивные частицы (А) являются неорганическими частицами, содержащими или состоящими из диоксида церия. Композиция содержит (B) по меньшей мере один анионный фосфатный диспергирующий агент, выбранный из группы растворимых в воде конденсированных фосфатов, причем растворимый в воде конденсированный фосфат выбран из группы, состоящей из метафосфатов общей формулы I:и полифосфатов общей формулы II и III:где М является аммонием, натрием и калием и индекс n равен от 2 до 10000. Композиция содержит (C) по меньшей мере один компонент на основе многоатомного спирта, выбранный из группы (с1) многоатомных спиртов, причем многоатомный спирт (с1) содержится в количествах от 0,005 ...

ВОДНЫЕ ПОЛИРУЮЩИЕ КОМПОЗИЦИИ, СОДЕРЖАЩИЕ N-ЗАМЕЩЕННЫЕ ДИАЗЕНИЙ ДИОКСИДЫ И/ИЛИ СОЛИ N -ЗАМЕЩЕННЫХ N'-ГИДРОКСИ-ДИАЗЕНИЙ ОКСИДОВ

Изобретение относится к водным полирующим композициям для полирования материалов подложек электрических, высокой точности механических и оптических устройств. Водная полирующая композиция содержит (A) по меньшей мере одно растворимое в воде или диспергируемое в воде соединение, выбранное из солей N-замещенных N'-гидрокси-диазений-оксидов, и (В) абразивные частицы, содержащие оксид церия или состоящие из него. Описывается также способ полирования материалов до достижения желательной плоскостности с использованием указанной композиции. Предложенная полирующая композиция обеспечивает повышенную оксид/нитрид-селективность и улучшенную глобальную и локальную плоскостность отполированных материалов электрических, механических и оптических устройств. 3 н. и 6 з. п. ф-лы, 2 табл., 6 пр.

СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВЫХ УСТРОЙСТВ, ВКЛЮЧАЮЩИЙ ХИМИКО-МЕХАНИЧЕСКОЕ ПОЛИРОВАНИЕ ЭЛЕМЕНТАРНОГО ГЕРМАНИЯ И/ИЛИ МАТЕРИАЛА SiGeВ ПРИСУТСТВИИ ХМП (ХИМИКО-МЕХАНИЧЕСКОЙ ПОЛИРОВАЛЬНОЙ) КОМПОЗИЦИИ, ВКЛЮЧАЮЩЕЙ СПЕЦИАЛЬНОЕ ОРГАНИЧЕСКОЕ СОЕДИНЕНИЕ

Изобретение относится к композиции для химико-механического полирования (ХМП) и к ее применению для полирования подложек для полупроводниковой промышленности. Способ изготовления полупроводниковых устройств включает химико-механическое полирование элементарного германия и/или материала SiGe, в котором 0,1≤x<1, в присутствии композиции для химико-механического полирования (ХМП), включающей: (A) неорганические частицы, органические частицы или их смесь или их композит, (B) по меньшей мере один тип окислительного реагента, (C) по меньшей мере один тип органического соединения, выбранного из группы, состоящей из альфа-аминокислоты или ее соли, органического соединения, включающего от двух до пяти карбоксигрупп (-СООН), или его соли, моно-, ди-, триалканоламина или его соли, простого аминоэфира, включающего дополнительную аминогруппу, гидроксигруппу, алкоксигруппу, карбоксильный фрагмент, или его соли, органического соединения, включающего от двух до четырех гидроксигрупп (-ОН), или его соли ...

ПАСТА ДЛЯ ДОВОДКИ МЕТАЛЛИЧЕСКИХ ПОВЕРХНОСТЕЙ

Изобретение может быть использовано в механо-химической обработке металлов, в частности для притирки прецизионных поверхностей. Паста содержит: абразивный порошок М-14 - М-28, окись хрома, олеиновую кислоту, стеарин, клей костный или мездровый, керосин, соду двууглекислую, нитрит натрия, фурацилин медицинский и эмульсию на основе эмульсола НГЛ-205. Сочетание компонентов в определенном соотношении обеспечивает интенсификацию съема металла в процессе притирки и повышение точности обработки притертых поверхностей. 2 табл.

ВОДНАЯ ПОЛИРУЮЩАЯ КОМПОЗИЦИЯ И СПОСОБ ХИМИКО-МЕХАНИЧЕСКОГО ПОЛИРОВАНИЯ ПОДЛОЖЕК, ИМЕЮЩИХ СТРУКТУРИРОВАННЫЕ ИЛИ НЕСТРУКТУРИРОВАННЫЕ ДИЭЛЕКТРИЧЕСКИЕ СЛОИ С НИЗКОЙ ДИЭЛЕКТРИЧЕСКОЙ ПОСТОЯННОЙ

Изобретение направлено на новую полирующую композицию, которая особенно хорошо подходит для полирования подложек, имеющих структурированные или неструктурированные диэлектрические слои с низкой или ультранизкой диэлектрической постоянной. Водная полирующая композиция содержит (A) абразивные частицы, выбранные из группы, состоящей из оксида кремния, оксида церия и их смесей, и (B) по меньшей мере одно амфифильное неионогенное поверхностно-активное вещество, выбранное из группы, состоящей из растворимых в воде или диспергируемых в воде поверхностно-активных веществ, имеющих (b1) гидрофобные группы, выбранные из группы, состоящей из разветвленных алкильных групп, имеющих 5-20 атомов углерода; и (b2) гидрофильные группы, выбранные из группы, состоящей из полиоксиалкиленовых групп, содержащих (b21) оксиэтиленовые мономерные звенья и (b22) замещенные оксиалкиленовые мономерные звенья, в которых заместители выбраны из группы, состоящей из алкильных, циклоалкильных или арильных, алкил-циклоалкильных ...

КОМПОЗИЦИЯ ДЛЯ СМР, СОДЕРЖАЩАЯ АБРАЗИВНЫЕ ЧАСТИЦЫ, СОДЕРЖАЩИЕ ДИОКСИД ЦЕРИЯ

Группа изобретений относится к полимерной химии и может быть использована в полупроводниковой промышленности. Композиция для химико-механической полировки содержит (А) абразивные частицы диоксида церия; (В) один или более полимеров. Каждая макромолекула полимеров содержит (i) одну или более анионных функциональных групп и (ii) одну или более структурных единиц -(AO)-R. А представляет собой CH, x = 2-4; а = 5-200. R представляет собой водород или разветвленную или линейную алкильную группу, имеющую от 1 до 4 атомов углерода. В полимере сумма молярных масс всех структурных единиц (ii) составляет по меньшей мере 50% от молярной массы указанного полимера (В). Для получения полупроводникового устройства осуществляют химико-механическую полировку подложки в присутствии композиции для химико-механической полировки. Полимер (В) применяют для подавления агломерации частиц, содержащих диоксид церия, и/или для установления дзета-потенциала частиц, содержащих диоксид церия. Обеспечиваются повышение ...

СОСТАВЫ И СПОСОБЫ ДЛЯ ВОССТАНОВЛЕНИЯ ПЛАСТМАССОВЫХ КОЛПАКОВ И ЛИНЗ

Группа изобретений относится к комплектам принадлежностей и способам для восстановления свойств оптической прозрачности и светопропускания пластмассовой поверхности, поврежденной нанесением царапин и/или окислением, вызванным УФ излучением. Предложен комплект принадлежностей (вариант 1), включающий, по меньшей мере, один полировочный состав, имеющий полировочный абразив с зернистостью от 50 микрон до 400 микрон, диспергированный в жидком или гелеобразном носителе, по меньшей мере, один состав для глянцевания, имеющий абразив для глянцевания с зернистостью от 10 микрон до 60 микрон, диспергированный в жидком или гелеобразном носителе, и, по меньшей мере, один УФ защитный состав для нанесения на пластмассовую поверхность, обработанную полировочным составом и составом для глянцевания. Комплект принадлежностей (вариант 2) включает, по меньшей мере, один абразивный состав и, по меньшей мере, один УФ защитный состав, при этом абразивные частицы включают агломераты, разрушающиеся и изменяющиеся ...

КОМПОЗИЦИЯ ДЛЯ ХИМИКО-МЕХАНИЧЕСКОЙ ПОЛИРОВКИ (СМР), СОДЕРЖАЩАЯ НЕИОННОЕ ПОВЕРХНОСТНО-АКТИВНОЕ ВЕЩЕСТВО И КАРБОНАТНУЮ СОЛЬ

Изобретение относится к композиции для химико-механической полировки (СМР). Композиция содержит (А) неорганические частицы, органические частицы или их смесь, или их композит, где частицы находятся в форме кокона, (В) амфифильное неионное поверхностно-активное вещество на основе полиоксиэтилен-полиоксипропиленового алкилового простого эфира в виде смеси молекул, содержащих в среднем алкильную группу, имеющую от 10 до 16 атомов углерода, от 5 до 20 оксиэтиленовых мономерных звеньев (b21) и от 2 до 8 оксипропиленовых мономерных звеньев (b22) в случайном распределении, (C) карбонатную или гидрокарбонатную соль, (D) спирт и (М) водную среду. Также описаны способ получения полупроводниковых устройств, включающий химико-механическую полировку подложки, применяемой в полупроводниковой промышленности, в присутствии СМР композиции и применение СМР композиции. 6 н. и 10 з.п. ф-лы, 4 ил., 2 табл., 2 пр.

ПРЕПАРАТ БЛАГОРОДНЫХ МЕТАЛЛОВ ИЛИ ГЛЯНЦЕВЫЙ ДЛЯ ПРЯМОЙ И НЕПРЯМОЙ ТРАФАРЕТНОЙ ПЕЧАТИ И ПЕРЕВОДНОЕ ИЗОБРАЖЕНИЕ, СОДЕРЖАЩЕЕ УКАЗАННЫЙ ПРЕПАРАТ

Описан препарат благородных металлов или глянцевый для украшения силикатных субстратов, таких как стекло, керамика, фарфор, китайская кость, содержащий, по меньшей мере, один полиаминоамид, при этом он дополнительно содержит одно или несколько веществ из группы, включающей: резинаты металлов, металлорганические соединения, природные смолы, искусственные смолы, смоляные масла, органические красители и наполнители, тиксотропные средства, растворители и пеногасители, при этом доля полиаминоамида в нем составляет от 3 до 50 вес.%. Также описано применение препарата благородных металлов или глянцевого для непрямой и прямой трафаретной печати на силикатных поверхностях, например на керамике, стекле или фарфоре, и переводное изображение на керамику, содержащее вышеописанный препарат. Технический результат - препарат является устойчивым к старению. 3 н. и 3 з.п. ф-лы.

СПОСОБ ОБРАБОТКИ КЕРАМИЧЕСКОЙ ПОДЛОЖКИ (ВАРИАНТЫ)

Изобретение относится к обработке керамических подложек, а более конкретно к полированию подложек. Описан способ обработки керамической подложки, содержащей алюминий, который включает в себя следующие операции: использование суспензии, введенной между подложкой и обрабатывающим инструментом, причем суспензия содержит абразив и добавку, содержащую оксофосфорное или органофосфорное соединение в концентрации в диапазоне от 0,05 до 5 вес.% и перемещение подложки относительно обрабатывающего инструмента. Также описан способ обработки керамической подложки, содержащей алюминий, который включает в себя следующие операции: использование суспензии, которая содержит абразив и добавку, содержащую оксофосфорное или органофосфорное соединение в концентрации в диапазоне от 0,05 до 5 вес.%, ввод в контакт подложки с обрабатывающим инструментом таким образом, что суспензия вводится между обрабатывающим инструментом и подложкой, и перемещение подложки или обрабатывающего инструмента таким образом, что подложка ...

Жидкая полировальная паста для обработки изделий на основе алюминия

Изобретение относится к механической обработке изделий на основе алюминия. Описана жидкая полировальная паста для обработки изделий на основе алюминия, включающая абразивный материал, триэтаноламин, стеариновую кислоту, жидкое натриевое стекло и воду, в которой в качестве абразивного материала используют отходы от полирования и шлифования оптических стекол при следующем соотношении компонентов, мас.%: отходы от полирования и шлифования оптических стекол - 30, стеариновая кислота - 7, жидкое натриевое стекло - 2, триэтаноламин - 2, вода - остальное. Технический результат: получена полировальная паста, обладающая сниженной себестоимостью, способом повышенной экономичности за счет исключения многостадийного предварительного приготовления исходного абразивного материала. 1 табл., 5 пр.

СОСТАВ ДЛЯ ГИДРОАБРАЗИВНОЙ ОЧИСТКИ ПОВЕРХНОСТЕЙ

Изобретение относится к механической обработке материалов, а именно к составам суспензий, применяемых при струйной гидроабразивной обработке, и может быть использовано, например, при очистке поверхностей различных изделий и сооружений от естественных и искусственных загрязнений, краски, и др. без повреждения основы изделия, а также при ремонте и реставрации памятников, в том числе памятников архитектуры, где требуется удаление тонких поверхностных слоев. Состав состоит из механической смеси воды и твердой фазы, в которой в качестве твердых частиц используют оксид алюминия, диоксид кремния, оксид кальция или их смеси, при этом в суспензию вводят алюминат кальция в количестве 3…10 объемных процента. Использование указанного состава обеспечивает защиту очищенной поверхности от последующего повторного загрязнения, а также уменьшает осаждение отдельных фракций суспензии в транспортной системе, в исходной емкости и на стенках магистральных трубопроводов. 1 табл.

ШЛИФОВАЛЬНО-ПОЛИРОВАЛЬНЫЙ СОСТАВ

Сущность изобретения: состав содержит в качестве абразива ультрадисперсный алмазографитовый порошок с содержанием алмаза 10 - 99 мас. % , со средним размером частиц алмаза и графита равным , с величиной удельной поверхности 380-390 м2/г в качестве поверхностно-активного полимера - амфотерную иминофурановую смолу на основе сульфаниловой кислоты при соотношении компонентов: ультрадисперсный алмазографитовый порошок 1 - 30 мас. % , иминофурановую смолу на основе сульфаниловой кислоты 0,2 - 20 мас. % и воду остальное. Компоненты состава смешивают и тщательно растирают до однородного состояния, затем разводят водой и перемешивают 20 - 30 мин. 1 табл.

СРЕДСТВО ДЛЯ ЧИСТКИ И ПОЛИРОВКИ ТВЕРДОЙ ПОВЕРХНОСТИ

Изобретение относится к области бытовой химии применительно к составам для чистки и полирования твердых поверхностей. Средство содержит щавелевую кислоту, абразивный порошок и органический наполнитель, причем в качестве органического наполнителя оно содержит пчелиный воск и поверхностно-активное вещество (ПАВ), в качестве абразивного порошка оно содержит диоксид титана или оксид алюминия, или их смесь, при следующем соотношении компонентов (мас.%): пчелиный воск 4-6; абразивный порошок 14-18; ПАВ 0,01-0,05; щавелевая кислота - остальное. Достигается повышение безопасности и упрощение применения. 2 з.п. ф-лы.

ПОЛИРОВАЛЬНАЯ СУСПЕНЗИЯ ДЛЯ САПФИРОВЫХ ПОДЛОЖЕК

Изобретение относится к водным суспензиям для полирования сапфировых подложек. Полирующая суспензия содержит, мас. %: стабилизированный оксидом натрия коллоидный кремнезем с размером частиц 75-80 нм в пересчете на оксид кремния - 39-40; хлористый натрий - 1,2-1,4; кальцинированную соду - 1,6-1,8 и воду - до 100. Изобретение обеспечивает повышенное время использования полирующей суспензии, высокую скорость съёма и низкую шероховатость поверхности. 1 табл.

КОМПОЗИЦИЯ ДЛЯ СВЯЗАННОГО ПОЛИРОВАЛЬНОГО ИНСТРУМЕНТА

Изобретение относится к оптико-механической обработке широкого класса материалов, используемых в приборостроительной, электронной и других отраслях промышленности при полировании стекла, керамики, кварца и других материалов. Композиция для связанного полировального инструмента включает синтетическое связующее и полирит, где в качестве синтетического связующего она содержит меламиноформальдегидную смолу. Соотношение компонентов следующее, мас.%: меламиноформальдегидная смола - 5-25, полирит - 75-95. Полировальный инструмент, полученный из указанной композиции, обладает повышенной полирующей способностью без использования полирующей суспензии, а также повышенной износостойкостью. 2 з.п. ф-лы, 3 табл.

ПОЛИРУЮЩИЙ СОСТАВ

Использование: для чистки и полирования лакокрасочных покрытий автомобилей. Сущность изобретения: полирующий состав содержит, мас. кубовый остаток дистилляции капролактами 6,0 - 14,0; этиленгликоль или диэтиленгликоль, или триэтиленгликоль, или глицерин 5,0 20,0; полиоксиэтиленовый эфир алкилфенола 8,0 12,0; уайт-спирит или скипидар 20,0 30,0; высокодисперсный фосфат кальция 2,0 8,0; вода остальное. Кубовый остаток дистилляции капролактама и многоатомный спирт перемешивают при 80 90°С, снижают температуру до 20 40°С, загружают остальные компоненты и перемешивают в течение 20 мин. Получают полирующий состав с чистяще-полирующей способностью при минус 10°С 89 92% 2 табл.

СОСТАВ ДЛЯ УХОДА ЗА МЕБЕЛЬЮ

Сущность изобретения: состав для ухода за мебелью содержит, мас.%: защитный воск ЗВП 0,2 -1,0, лигроиновую или остаточную фракцию бензина или их смесь (нефрас С4 150/200) 34,8, индустриальное масло И-40А 64,2 - 65,0. Компоненты смешивают при 80o C, до их полного растворения. Средство увеличивает блеск обрабатываемой поверхности и обладает водостойкостью. 1 табл.

КРЕМ ДЛЯ ОБУВИ

Использование: бытовая химия, кремы по уходу за обувью. Сущность изобретения: крем содержит фильтрат обезмасливания гача или петролатума - отход производства парафина или церезина с температурой каплепадения 40-60oC 80-90 мас. %, краситель 0,5-3,5 мас.%, уайт-спирит или скипидар 9,5-16,5 мас.%. В реактор помещают отход производства парафина или церезина, нагревают до 65-70oC и перемешивают; краситель предварительно растворяют в органическом растворителе, вводят в реактор; перемешивание ведут 10-15 мин; массу охлаждают до температуры на 5oC выше температуры застывания крема. Характеристики: водостойкость 80-100 баллов, пыленакопление 1,1-1,4 мг/см2; блеск 11-13 ед.шк. блеском, рН водной вытяжки 6,2-6,7. 3 табл.

ПОЛИРОВАЛЬНАЯ ПАСТА

Использование: для полирования сложнопрофильных деталей и инструментов из металла. Сущность: полировальная паста содержит, мас. проц.: парафин 30 - 35, воск 3 - 5, ультрадисперсный алмазный порошок с размером частиц 0,002 - 0,01 мкм, окись хрома 20 - 50, олеиновокислый триэтаноламин - остальное. В расплавленные воск и парафин добавляют олеиновокислый триэтаноламин, перемешивают, добавляют окись хрома и алмазный порошок при перемешивании небольшими порциями. Массу охлаждают и разливают в формы. 1 табл.

СПОСОБ ИЗГОТОВЛЕНИЯ ВОДНО-ЭМУЛЬСИОННОГО КРЕМА ДЛЯОБУВИ

Изобретение относится к бытовой химии, в частности к составам для ухода за обувью и способам их изготовления. Способ изготовления водно-эмульсионного крема заключается в том, что сначала компоненты (парафин, стеарин) перемешивают с водой при 80-90°С в течение 20-40 мин, обрабатывают полученную смесь касторовым маслом в количестве 1 - 2% и формалином в количестве 0,05 - 0,15% при перемешивании в течение 5-10 мин, добавляют триэтаноламин и эмульгируют в течение 15-20 мин. Достигается повышение стабильности полученной эмульсии и срока хранения.

ПАСТА ПОЛИРОВАЛЬНАЯ ЖИДКАЯ

Изобретение относится к композиционной химии, в частности к пастам, применяемым для обработки металлических изделий. Паста имеет следующий состав, мас.%: олеиновая кислота 1,5-3,0; триэтаноламин 1,5-4.0; стеариновая кислота 3,0-5.2; абразивный наполнитель (глинозем, электрокорунд, карбид кремния или их смеси) 30,0-56,4; аэросил 0,3-0,5; ланолин 1,0-4,0; вода остальное. Достигается повышение эффективности полирования металлических изделий и качества обрабатываемых поверхностей. 2 табл.

СПОСОБ ПОЛУЧЕНИЯ МАГНИТНОЙ ЖИДКОСТИ

Изобретение относится к области получения магнитных жидкостей из отходов травильного и гальванического производств. Задачей изобретения является получение магнитных жидкостей на основе воды путем использования отработанного травильного раствора машиностроительных заводов как источника двухвалентного железа и осадка-отхода после очистки сточных вод гальванического производства электрокоагуляцией как источника трехвалентного железа. Задача решается за счет того, что способ включает соосаждение солей двух- и трехвалентного железа избытком концентрированного раствора аммиака, покрытие поверхности частиц адсорбированным слоем стабилизирующего вещества - олеата натрия, нагрев суспензии и доведение до кипения при постоянном перемешивании, центрифугирование смеси после ее остывания для отделения крупнодисперсных частиц, отличающийся тем, что в качестве солей двух- и трехвалентного железа используют смесь отработанного травильного раствора машиностроительных заводов, содержащего FeSO4 и солянокислого ...

СОСТАВ ДЛЯ ПОЛИРОВАНИЯ ОПТИЧЕСКИХ ПОВЕРХНОСТЕЙ

Состав для полирования оптических поверхностей деталей, изготовленных из стекла или пластмассы, представляет собой водную суспензию, содержащую альфа-оксид алюминия и оксид церия. Определенное соотношение компонентов и размер частиц альфа-оксида алюминия и оксида церия в суспензии обеспечивают высокое качество полирования. 3 з.п. ф-лы, 4 ил., 1 табл.

ПОЛИРОВОЧНАЯ ПАСТА ДЛЯ ТЕРМОПЛАСТИЧЕСКИХ ПОЛИМЕРОВ СТОМАТОЛОГИЧЕСКОГО НАЗНАЧЕНИЯ

Изобретение относится к области медицины, а именно к стоматологии, и может быть использовано для окончательной обработки съемных конструкций зубных протезов из термопластических полимеров. Полировочная паста содержит мелкодисперсный порошок частиц электрокорунда белого со средним размером частиц 1,5 мкм, стеариновую кислоту, олеиновую кислоту, твин-20 и красители-пигменты в следующем соотношении, мас.%: Олеиновая кислота 2,50-4,50, Стеариновая кислота 20,0-35,0, Твин-20 4,0-6,0, красители-пигменты 0,05-0,20, Электрокорунд белый со средним размером частиц 1,5 мкм - остальное. Использование полировочной пасты позволяет добиться гладкой, ровной, глянцевой поверхности термопластических полимеров, а также повысить производительность труда за счет сокращения времени, необходимого для окончательной обработки протезов из термопластических полимеров. 2 табл., 1 пр.

КОМПОЗИЦИЯ ДЛЯ СУПЕРФИНИШНОЙ ДОВОДКИ ПОВЕРХНОСТИ МАТЕРИАЛА

Сущность изобретения: композиция для суперфинишной доводки поверхности материалов содержит, мас.%: синтетический алмазосодержащий материал (САМ) с размером первичных частиц 4-6 нм, объединенных в агрегаты размером 20-500 нм с величиной удельной поверхности 250- 450 м2/г , объемом пор 0,6-2,0 см3/г - 5-10; глицерин или этиленгликоль 10-15; деионизированной воде остальное. Композиция может дополнительно включать перекись водорода 5-15 мас.%, этилендиамин-0, 2-2,0 мас. % и щелочь 1-3 мас.%. Навеску САМ в воде диспергируют в ультразвуковой ванне, суспензию фильтруют и добавляют при перемешивании последовательно многоатомный спирт и, при необходимости другие добавки. 1 з.п. ф-лы, 1 табл.

СПОСОБ ОБРАБОТКИ КЕРАМИЧЕСКОЙ ПОДЛОЖКИ (ВАРИАНТЫ)

... 1. Способ обработки керамической подложки, содержащей алюминий, который включает в себя следующие операции: использование суспензии, введенной между подложкой и обрабатывающим инструментом, причем суспензия содержит абразив и добавку, содержащую фосфорное соединение; и перемещение подложки относительно обрабатывающего инструмента. 2. Способ по п.1, в котором подложку полируют. 3. Способ по п.1, в котором абразив содержит оксид алюминия. 4. Способ по п.3, в котором оксид алюминия имеет средний размер частиц в диапазоне от 0,05 до 1,5 мкм. 5. Способ по п.4, в котором средний размер частиц лежит в диапазоне от 0,10 до 1,0 мкм. 6. Способ по п.5, в котором средний размер частиц лежит в диапазоне от 0,10 до 0,5 мкм. 7. Способ по п.1, в котором абразив выбирают из группы, в которую входят диоксид кремния, диоксид циркония, карбид кремния, карбид бора и алмаз. 8. Способ по п.7, в котором абразив представляет собой диоксид циркония. 9. Способ по п.1, в котором подложка представляет собой оксид алюминия ...

СОСТАВ ПОЛИРУЮЩИЙ, КОНСЕРВИРУЮЩИЙ, ЧИСТЯЩИЙ

Состав полирующий, консервирующий, чистящий, содержащий парафин, жирную кислоту, силиконовое масло, полиметилфенилсилоксановый лак, бензиновый углеводород, смесь, состоящую из оксиэтилированного алкилфенола, глицерина, этиленгликоля и воды в массовом соотношении 2: 1: 2: 4, дополнительно содержит поливинилпирролидон, при следующем соотношении компонентов, мас. %: Парафин - 24,0-39,0 Жирная кислота - 2,0-2,5 Силиконовое масло - 2,5-5, 0 Полиметилфенилсилоксановый лак - 7,0-16,0 Смесь, состоящая из оксиэтилированного алкилфенола, глицерина, этиленгликоля и воды в массовом соотношении 2: 1: 2: 4 - 24,0-45,0 Бензиновый углеводород - 3,6-6,8 Поливинилпирролидон - 1,0-2,5 Вода деминерализованная - Остальное ...

АБРАЗИВНЫЙ МИКРОПОРОШОК ДЛЯ ПОЛИРОВАНИЯ НА ОСНОВЕ ОКСИДОВ АЛЮМИНИЯ И 3D-МЕТАЛЛА И СПОСОБ ЕГО ПОЛУЧЕНИЯ

... 1. Абразивный микропорошок для полирования на основе оксидов алюминия и 3d-металла, отличающийся тем, что, с целью повышения полирующей способности, уменьшения шероховатости поверхности полируемого изделия и получения экологически чистого микропорошка, в качестве оксида 3d-металла используют оксид железа (III) при следующем соотношении компонентов, мас.%: Al2O3 - 90,0-99,9 Fe2O3 - 10,0-0, 1 2. Способ получения абразивного порошка для полирования на основе оксидов алюминия и 3d-металла по п. 1, включающий приготовление шихты из соединений алюминия и 3d-металла, механохимическую активацию шихты и ее последующую прокалку при температуре 900-1300oC, отличающийся тем, что, с целью повышения полирующей способности, уменьшения шероховатости поверхности полируемого изделия и получения экологически чистого порошка, механохимическую активацию проводят при температуре от 20 до 275oC в течение от 10 до 200 минут. 3. Способ по п. 2, отличающийся тем, что шихту готовят из гидроксида алюминия, в частности ...

КОМПОЗИЦИИ ДЛЯ ЧИСТОВОЙ ОБРАБОТКИ С УМЕНЬШЕННЫМ СОДЕРЖАНИЕМ ЛЕТУЧИХ ОРГАНИЧЕСКИХ СОЕДИНЕНИЙ

... 1. Композиция для чистовой обработки, состоящая из смеси абразивных частиц и эмульсии, причем указанная эмульсия содержит воду, летучий силоксан и смазку; и указанная композиция для чистовой обработки практически не содержит нелетучих силиконовых материалов, 2. Композиция для чистовой обработки по п.1, отличающаяся тем, что указанный летучий силоксан составляет примерно 3-20 вес.% указанной композиции для чистовой обработки. 3. Композиция для чистовой обработки по п.1, отличающаяся тем, что вода составляет от примерно 10 до примерно 60 вес.% указанной композиции для чистовой обработки; указанный летучий силоксан составляет от примерно 3 до примерно 20 вес.% указанной композиции для чистовой обработки; указанная смазка составляет от примерно 0,1 до примерно 10 вес.% указанной композиции для чистовой обработки; и указанные абразивные частицы составляют от примерно 1 до примерно 60 вес.% указанной композиции для чистовой обработки. 4. Композиция для чистовой обработки по п.1, отличающаяся ...

КОМПОЗИЦИИ ДЛЯ ХИМИКО-МЕХАНИЧЕСКОЙ ПОЛИРОВКИ, СОДЕРЖАЩИЕ ОДИН ИЛИ БОЛЕЕ ПОЛИМЕРОВ, ВЫБРАННЫХ ИЗ ГРУППЫ, ВКЛЮЧАЮЩЕЙ N-ВИНИЛ-ГОМОПОЛИМЕРЫ И N-ВИНИЛОВЫЕ СОПОЛИМЕРЫ

Жидкая полировальная паста

КОМПОЗИЦИЯ ДЛЯ СМР, СОДЕРЖАЩАЯ АБРАЗИВНЫЕ ЧАСТИЦЫ, СОДЕРЖАЩИЕ ДИОКСИД ЦЕРИЯ

СУПЕРФИНИШНАЯ АЛМАЗНАЯ ПОЛИРОВАЛЬНАЯ ПАСТА

Полировальная паста для суперфинишной доводки поверхности металлов, сплавов и неметаллических материалов, включая абразив и органическую основу, отличающаяся тем, что в качестве абразива паста содержит ультрадисперсный алмазный порошок с чистотой не менее 99%, дисперсностью 400-500 м2/г и размером первичных частиц 3,5-6,0 нм, в качестве поверхностно-активного вещества олеиновую кислоту, а в качестве органической основы глицерин при следующем соотношении компонентов, мас.%: Ультрадисперсный алмазный порошок - 14-15 Олеиновая кислота - 2-5 Глицерин - Остальное ...

ЭЛЕМЕНТ ДЛЯ ОБРАБОТКИ МАТЕРИАЛОВ ПРИ ИСПЫТАНИЯХ НА ЦИКЛИЧЕСКУЮ ИЗНАШИВАЕМОСТЬ

Изобретение относится к средствам для испытания материалов на циклическое изнашивание и может быть использовано для тонкой обработки естественных пород, например мрамора. Техническим результатом изобретения является снижение расхода материала элемента за счет обеспечения регулируемой растворимости составляющих с одновременным повышением качества полирования за счет обеспечения возможности использования полировального средства, твердость которого не превышает твердости обрабатываемого материала, обеспечения регулируемой кислотности и комплексов с заданной растворимостью на обрабатываемой поверхности, а также снижения поверхностного натяжения на обрабатываемой поверхности. Указанный результат достигается за счет взятых в определенных соотношениях полировального средства из мелкодисперсных порошков оксидов металлов, связующего вещества из водорастворимых синтетических смол и снабжения элемента формирователем растворимых комплексов и требуемой кислой среды на обрабатываемой поверхности, средством ...

КОМПОЗИЦИЯ ДЛЯ ОЧИСТКИ И ПОЛИРОВАНИЯ ПОВЕРХНОСТИ

Настоящее изобретение относится к композиции для очистки и полирования поверхностей, которая особенно удобна в применении при очистке, полировании и обработке для придания водонепроницаемости поверхностей различных типов материалов с различной поверхностной текстурой и которая может быть использована без предварительной промывки или очистки обрабатываемой поверхности. Композиция содержит примерно от 1,0 до 1,5 об.% гексана, примерно от 0,5 до 0,8 об. % чистой кремнийорганической жидкости, примерно от 1,0 до 2,0 об.% карнаубского воска, примерно от 0,5 до 1,0 об.% растворителя - алифатического гликоля и воду, причем все количества даны по отношению к конечному объему композиции.

СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВЫХ УСТРОЙСТВ, ВКЛЮЧАЮЩИЙ ХИМИКО-МЕХАНИЧЕСКОЕ ПОЛИРОВАНИЕ ЭЛЕМЕНТАРНОГО ГЕРМАНИЯ И/ИЛИ МАТЕРИАЛА SiGeВ ПРИСУТСТВИИ XMП (ХИМИКО-МЕХАНИЧЕСКОЙ ПОЛИРОВАЛЬНОЙ) КОМПОЗИЦИИ, ВКЛЮЧАЮЩЕЙ СПЕЦИАЛЬНОЕ ОРГАНИЧЕСКОЕ СОЕДИНЕНИЕ

... 1. Способ изготовления полупроводниковых устройств, включающий химико-механическое полирование элементарного германия и/или материала SiGe, в котором 0,1≤x<1, в присутствии композиции для химико-механического полирования (ХМП) содержащий:(A) неорганические частицы, органические частицы или их смесь или композит,(B) по меньшей мере один тип окислительного реагента,(C) по меньшей мере один тип органического соединения, которое включаетпо меньшей мере {к} фрагментов (Z), но исключены соли, анионы которыхявляются неорганическими, и единственным органическим катионом которыхявляется [NRRRR], где {к} равно 1, 2 или 3,(Z) означает гидроксигруппу (-ОН), алкоксигруппу (-OR), гетероциклическую алкоксигруппу (-ORв качестве части гетероциклической структуры), карбоксигруппу (-СООН), карбоксилатную группу (-COOR), аминогруппу (-NRR), гетероциклическую аминогруппу (-NRW в качестве части гетероциклической структуры), иминогруппу (=N-Rили -N=R), гетероциклическую иминогруппу (=N-Rили -N=Rв качестве части ...

СОСТАВ ПОЛИРОВАЛЬНОГО ИНСТРУМЕНТА СО СВЯЗАННЫМ АБРАЗИВОМ

... 1. Состав полировального инструмента со связанным абразивом, содержащий диеновый синтетический каучук и полировальный порошок, отличающийся тем, что он дополнительно содержит органический пероксид, неорганическую или органическую соль щелочного металла при следующем соотношении компонентов, мас.ч.:2. Состав полировального инструмента со связанным абразивом по п.1, отличающийся тем, что в качестве диенового синтетического каучука содержит смесь каучуков, один из которых диеновый синтетический каучук при следующем соотношении компонентов, мас.ч.:3. Состав полировального инструмента со связанным абразивом по п.1., отличающийся тем, что в качестве диенового синтетического каучука содержит смесь каучуков, один из которых диеновый синтетический каучук при следующем соотношении компонентов, мас.ч.:4. Состав полировального инструмента со связанным абразивом по пп.1-2, отличающийся тем, что он дополнительно содержит в качестве временного пластификатора олигоэфиракрилаты при следующем соотношении ...

СРЕДСТВО ПО УХОДУ ЗА КОЖАНОЙ ОБУВЬЮ

Средство по уходу за кожаной обувью, включающее воск, парафин, жир натуральный, краситель и органический растворитель, отличающееся тем, что в качестве воска он содержит воск полировочный и дополнительно полиэтилсилоксановую жидкость при следующем сотношении компонентов, мас.%: Воск полировочный - 5-15 Парафин - 25-35 Жир натуральный - 2-3 Полиэтилсилоксановая жидкость - 1-3 Краситель - 2-3 Органический растворитель - Остальное ...

ВОДНАЯ ПОЛИРУЮЩАЯ КОМПОЗИЦИЯ И СПОСОБ ХИМИКО-МЕХАНИЧЕСКОГО ПОЛИРОВАНИЯ ПОДЛОЖЕК, СОДЕРЖАЩИХ ПЛЕНКИ ДИЭЛЕКТРИКА ОКСИДА КРЕМНИЯ И ПОЛИКРЕМНИЯ

... 1. Водная полирующая композиция, содержащая(A) по меньшей мере, один тип абразивных частиц, содержащих или состоящих из диоксида церия, которые положительно заряжены при диспергировании в водной среде, свободной от компонента (C) и имеющей pH в интервале от 3 до 9, что подтверждается электрофоретической подвижностью;(B) по меньшей мере, один растворимый в воде полимер, выбранный из группы, состоящей из линейных и разветвленных гомополимеров и сополимеров алкиленоксидов; и(C) по меньшей мере, один анионный фосфатный диспергирующий агент,где композиция содержит растворимый в воде полимер (В) в количествах от 0,001 до 5 мас.%.2. Водная полирующая композиция по п.1, отличающаяся тем, что абразивные частицы (А) состоят из диоксида церия.3. Водная полирующая композиция по п.1, отличающаяся тем, что она содержит, в пересчете на полную массу указанной полирующей композиции, от 0,005 до 10 мас.% абразивных частиц (A).4. Водная полирующая композиция по п.1, отличающаяся тем, что линейные и разветвленные ...

ПАСТА ДЛЯ ЧИСТКИ ИЗДЕЛИЙ ИЗ ДРАГМЕТАЛЛОВ

Паста для чистки изделий из драгметаллов на основе моющего вещества, абразивного материала, жиров, амина, воды, отличающаяся тем, что в качестве моющего вещества она содержит жир животный технический, соду кальцинированную, в качестве абразива мел природный, в качестве амина аммиак водный и дополнительно содержит натрий серноватистокислый при следующем соотношении компонентов, мас.%:Жир животный технический - 8-12Сода кальцинированная - 6-10Мел природный - 46-52Аммиак водный - 0,01-0,02Натрий серноватистокислый (гипосульфит) - 0,01-0,02Вода - Остальноеи ...

КРЕМ ДЛЯ ОБУВИ

Изобретение относится к бытовой химии и предназначено для чистки, смягчения, окраски обуви и других кожаных изделий и придания им водоотталкивающих свойств. Цель изобретения - замена дефицитного сырья на широко доступные продукты нефтепереработки, повышение экологической чистоты производства, снижение его пожароопасности и существенное увеличение сроков хранения крема для обуви. Крем для обуви состоит из твердых углеводородов (смеси парафина и церезина в соотношении 1 - 3 3:1 мас. ч.), пластифицированных низкомолекулярными нелетучими минеральными маслами (индустриальным, трансформаторным, моторным, вазелиновым, трансформаторным, компрессорным, веретенным) в соотношении твердый углеводород : масло от 20 : 80 до 50 : 50 мас. ч. Для повышения блеска пленки в крем вводят глянцеобразователи: лецитин, озокерит, воск до 5 мас. ч. на 100 массовых частей крема. Новым в изобретении является использование в качестве консистентной основы крема смеси парафина и церезина в массовом соотношении от 1 : ...

АВТОПОЛИРОЛЬ

Целью изобретения является получение автополироля из малотоксичных продуктов нефтепереработки. Средство представляет собой однородную жидкость на основе малотоксичного жидкого парафина с добавлением защитного воска ЗВП, скипидара и индустриального масла И-40А, полученную при нагреве до 80C и перемешивание до полного растворения ингридиентов. По своим качественным показателям средство превосходит аналогичную продукцию. Применение вышеуказанных ингредиентов в составе автополироля обусловлено малой токсичностью продуктов, что расширяет область их применения и позволяет удовлетворить потребительский спрос на данную продукцию.

ПРЕПАРАТ БЛАГОРОДНЫХ МЕТАЛЛОВ ИЛИ ГЛЯНЦЕВЫЙ ДЛЯ ПРЯМОЙ И НЕПРЯМОЙ ТРАФАРЕТНОЙ ПЕЧАТИ И ПЕРЕВОДНОЕ ИЗОБРАЖЕНИЕ, СОДЕРЖАЩЕЕ УКАЗАННЫЙ ПРЕПАРАТ

... 1. Препарат благородных металлов или глянцевый, отличающийся тем, что он содержит, по меньшей мере, один полиаминоамид. 2. Препарат по п.1, отличающийся тем, что аминные функции полиаминоамида являются дезактивированными. 3. Препарат по п.2, отличающийся тем, что аминные функции полиаминоамида являются протонированными. 4. Препарат по одному из п.1 или 2, отличающийся тем, что он дополнительно содержит одно или несколько веществ из группы, включающей резинаты металлов, металлорганические соединения, природные смолы, искусственные смолы, смоляные масла, органические красители и наполнители, тиксотропные средства, растворители и пеногасители. 5. Препарат по п.1, отличающийся тем, что доля полиаминоамида в нем составляет от 3 до 50 вес.%. 6. Применение препарата благородных металлов или глянцевого по любому из пп.1-5 для непрямой и прямой трафаретной печати на силикатных поверхностях, например, на керамике, стекле или фарфоре. 7. Керамическое переводное изображение, отличающееся тем, что оно ...

АБРАЗИВНАЯ ПОЛИРОВАЛЬНАЯ ПАСТА

Изобретение относится к составам абразивных паст и может быть использовано в машиностроении в процессах полирования и финишной обработки поверхности металлических деталей, преимущественно при их зеркальном полировании. Предлагаемая абразивная полировальная паста содержит водный раствор соли циклогексиламина и синтетических жирных кислот C10 - C13 в жидком коллоидно-растворенном, мицелообразном виде и 8 - 10% воды в своей массе в солюбилизированном состоянии, а также 0,1 - 0,5% эфирного масла в качестве ароматизированного душистого вещества.

МОЮЩЕ-ПОЛИРУЮЩЕЕ СРЕДСТВО

... 1. Моюще-полирующее средство для эффективной предварительной подготовки поверхностей изделий перед их суперфинишной обработкой, включающее абразивную смесь в качестве абразива, глицерин в качестве органической основы и моющий состав в качестве поверхностно-активного вещества, отличающееся тем, что в качестве абразивной смеси оно содержит ультрадисперсный алмазный порошок с чистотой 92-99% и удельной поверхностью 400-500 м2/г, а также абразив с размером частиц в пределах 0,5-1,6 мкм, при этом имеет следующее соотношение компонентов, мас.%: Ультрадисперсный алмазный порошок 1,2-2,4 Абразив 55-65 Глицерин 7,5-15 Моющий состав остальное 2. Моюще-полирующее средство по п.1, отличающееся тем, что ультрадисперсный алмазный порошок состоит из зерен округлой формы с размером частиц 10-200 A.

АБРАЗИВНАЯ КОМПОЗИЦИЯ ДЛЯ ШЛИФОВАЛЬНОГО ИНСТРУМЕНТА

Изобретение относится к технологии обработки природных и искусственных камней и используется при обработке декоративных, поделочных, полудрагоценных и драгоценных камней. Композиция состоит из абразивных частиц, ультрадисперсных алмазов и органической связки, причем весовое содержание ультрадисперсных алмазов составляет 0,03 - 2,0%. Ультрадисперсные алмазы обеспечивают повышение сцепления абразивных частиц и связки, что увеличивает износостойкость шлифовального инструмента.

ОБУВНОЙ КРЕМ

Изобретение относится к бытовой химии, в частности к составам, предназначенным для ухода за кожаными изделиями. Обувной крем содержит парафиновые продукты - парафин и петролатум в соотношении 1 : 1 - 1 : 6, олеиновую кислоту и синтетические жирные кислоты, взятые в соотношении 1 : 3 - 1 : 4, технический свиной жир, белковый гидролизат, краситель и органический растворитель при следующем соотношении компонентов, мас.%: указанные парафиновые продукты 23 - 70, технический свиной жир 20 - 40, олеиновая кислота 1 - 3, синтетические жирные кислоты 3 - 8, белковый гидролизат 1 - 10, краситель 1 - 2, растворитель остальное. Отличием предлагаемого обувного крема от известных кремов является дополнительное включение в его состав белкового гидролизата, представляющего собой продукт переработки отходов кожевенного производства. Предлагаемое соотношение компонентов крема и введение в его состав белкового гидролизата обеспечивают высокие эксплуатационные качества крема; образующаяся на поверхности кожи ...

Способ получения полировальной суспензии

Способ получения полировального порошка

Восковая полировочная композиция для натирки полов

Крем для обуви

Полировочная паста

Притирочная суспензия

Паста для шлифования и полирования древесины

АБРАЗИВНО-ДОВОДОЧНАЯ ПАСТА

Доводочная паста

Способ полирования оптического стекла

Полировальная паста

Изобретение относится к абразивным составам, предназначенным для обработки поверхности различных материалов шлифованием и полированием. Изобретение позволяет повысить качество .обрабатываемых поверхностей до RJ, 0,17-0,32 мкм за счет использования состава, содержащего, мас.%: эгириновый концентрат 25-50, орто- фосфорная кислота 14-20, глина молотая Латненская 6-10, сульфонол 1-3, каолин 14-22,.вода остальное. с 4 4: СО ...

Суспензия для обработки стеклянных изделий

Изобретение относится к электронной технике и может быть использовано для полирования стекляннях пластин при изготовлении фотошаблонов . Цель изобретения - повьппение качества обработки стеклянных изделий. Цель достигается за счет использования в суспензии следующих компонентов , Mac.Z: двуокись церия с удельной поверхностью 5 10 -2-10 10-55, поверхностно-активное вещество , выбранное из группы: иминодиуксус- ная, нитрилтриуксусная, этилендиамин- тетрауксусная кислоты 0,01-0,1-, окись бора 0,05-0,15 и вода остапь™ ное. 1 табл.

Абразивная масса

Абразивная паста

Способ полировки стальных поверхностей

Абразивная паста

АБРАЗИВНАЯ ПАСТА, включающая олеиновую кислоту, двууглекислую соду, нитрит натрия, абразив и воду, отличающаяся тем, что, с целью повьшения производительности процесса и улучшения санитарно-гигиенических условий труда, она в качестве абразива содержит обезвоженньш осадок красного шлама отход переработки бокситов и дополнительно - поливинилпирролидон при следующем соотношении компонентов, час.%: Олеиновая кислота 2-6 Двууглекислая сода 0,5 - 2 Нитрит натрия 1 - 3 Обезвоженный оса (Л док красного шлама - отход переработки бокситов 25-50 Поливинилпирролидон 0,5-3 ВодаОстальное ...

Абразивная паста

АБРАЗИВНАЯ ПАСТА, включающая силикагель, расщепленньй жир, олеиновую кислоту, стеарин, нитрит натрия, керосин и абразив, отличающаяся тем, что, с целью повьшения производительности процесса притирки металлических поверхностей и улучшения санитарногигиенических условий труда, она в качестве абразива содержит хвосты обогащения железистых кварцитов и дополнительно содержит поли-м-фениленизофталамвд или поли-п-фенилентерефталамид при следующем соотношении компонентов, мас.%: Хвосты обогащения кварцитов 30-45 Поли-м-фениленизофталамид или поли-п-фенилентерефталамид 0,2-2,5 Силикагель 0,5-0,8 Расщепленный жир 2,0-3,0 Олеиновая кислота 0,6-2,0 Стеарин3,0-4,0 Нитрит натрия 1,5-2,0 сл КеросинОстальное с ...

Способ изготовления абразивных изделий

Способ электрохимического полирования изделий

Паста для полировки и шлифовки деталей

Полимерная композиция

Способ электрохимической обработки изделий из стали

Паста для доводки и полировки деталей

СПОСОБ ИЗГОТОВЛЕНИЯ МАССЫ ДЛЯ НАТИРКИ ПОЛОВ

Способ электролитического полирования редкоземельных металлов и их сплавов

Абразивная паста

Паста для полирования и шлифования деталей

Состав для очистки лакокрасочных покрытий

Суспензия для полирования химически неустойчивого несиликатного стекла

Раствор для полировки оптических окон

Шлифовально-полировальная паста

Средство для очистки твердой поверхности

Способ полирования пуговиц и тому подобных изделий из пластмасс

Способ получения мастики для полов и обуви

Способ удаления нагара с металлической поверхности

Полировальная жидкость

ПPИTИPOЧHO-ДOBOДOЧHAЯ ПACTA

Состав порозаполнителя для отделки поверхности деревянных изделий

Доводочно-притирочная паста

Полировальная паста

Полирующий состав для обуви

Изобретение относится к производству товаров бытовой химии, в частности к составам для ухода за обувью и кожаными; изделиями. Изобретение позволяет улучшить зксплуатационные свойства по блеску, водостойкости и способности удерживать растворитель за счет использования состава, содержащего , мас.%: монтан-воск 0,2-1,2; озокерит рудный 0,3-2,0; петролатум 0,4-1,5; церезин нефтяной 4,0-10,0; парафин 3,0-12,0; кислоту олеиновую или синтетические жирные кислоты фракции 1,0-5,0; продукт термической деструкции полиэтилена высокого давления 1,0-5,0; церезин 2,5- 8,0; продукт микробиологической трансформации углеводородов нефти 0,5- 5,0; краситель 0,2-4,0; органический растворитель - остальное. 2 табл. i (Л со 01 00 со ...

Состав для виброполировки деталей из алюминия и его сплавов

Изобретение относится к вибрационной обработке деталей из алюминия и его сплавов. Изобретение позволяет усилить блескообразование и ускорить его до 5-10 мин за счет использования состава, содержащего водный раствор следующих компонентов, г/л: натриевые соли высших жирных кислот фракции С. -С 2-5; надсернокислый натрий В - 15; моноэтаноламин 8 - 10, синтетические жирные кислоты фракции с , -С, 1,5-3. 2 табл. со оо ...

Состав для виброобработки металлов

СОСТАВ ДНЯ ВИБРООВРАБОТКИ МЕТАЛЛОВ, включающий моноэтаноламиновые соли синтетических жирных кислот фракций Са, моноэтаноламин-, воду и целевую добавку, отличающийся тем, что, с целью повышения степени упрочнения, отражательной способности и коррозионной стойкости поверхности и увеличения работе способности состава, он в качестве целевой добавки содержит N,N -тетра- ...

Полировально-шлифовальная паста

Водоэмульсионная полировочная паста

Шлифовальная и полировальная паста для точной шлифовки и полировки шаров, роликов, наружных и внутренних колец подшипников качения

Шлифовально-полировальная паста

Изобретение относится к абразивным составам для финишной обработки стальных поверхностей и может быть использовано в различных областях техники. Изобретение позволяет повысить производительность обработки стальных поверхностей за счет использования шлифовально-полировальной пасты, содержащей, мас.%: порошок карбида титана 20,0-70,0; моноэтанол- амид 5,0-10,Of олеиновая кислота 3,0; органическая соль этаноламида и жирных кислот 0,а5-0,50, глицериновый эфир канифоли 3,0-10,о; моносте- арат глицерина - остальное. 2 табл. а о ...

Способ получения полирующего состава для обработки полупроводниковых пластин

Изобретение относится к получению бездефектных полупроводниковых подложек для эпитаксиального наращивания и может быть использовано при получении стабильных составов с высокой полирующей способностью. Изобретение позволяет улучшить качество полирующего состава, полирующую способность и качество поверхности полупроводниковых пластин за счет осуществления способа получения полирующего состава смешением водного раствора кремнийсодеожащего золя с температурой 25-40°С с 2,5%-ным водным раствором этилендиаминтетрауксусной кислоты, с раствором натрийдодецилсульфата и 25%-ным раствором поли-N, N-диме- тил-М, N-диаллиламмонийфторида до получения однородной консистенции с последующим введением окислителя - гипо- хлорида натрия при массовом соотношении кремнийсодержащего золя, этилендиаминтетрауксусной кислоты, натрийдодецилсульфата , поли-N, М-диметил-М, N-диаллиламмонийхлорида, гипохлорида натрия и воды соответственно 1:(0,0004-0,005) : (0,002-0,007) : (0,0025-0,0187) : (3,5-7,0) ...

Гидроабразивный состав для обработки металлических изделий

Состав для очистки лакокрасочных покрытий

Смазка для полирования и шлифования металлов

СМАЗКА ДЛЯ'ПОЛИРОВАНИЯ И ШЛИФОВАНИЯ МЕТАЛЛОВ на основе минерального масла, натриевого'мыла кар- боновых кислот, твердых углеводородов, гликоля и неиногенного поверхностно-активного вещества, отличающаяся тем, что^ с целью расширения рабочего диапазона температур и улучшения адгезионных свойств смазки, она дополнительно содержит июнтан-воск или торфяной воск при следующем содержании компонентов. вес.%:Натриевое кыло карбо- новых кислот 10-25 Твердые углеводороды 8-15 Гликоль10-15Неионогенное поверх- ' ностно-активное вещество10-20 Монтан-воск или торфяной воск1-30 Минеральное масло До 100'(Л ...

Silicon polishing compositions with high rate and low defectivity

The invention relates to a chemical-mechanical polishing composition comprising silica, one or more organic carboxylic acids or salts thereof, one or more polysaccharides, one or more bases, optionally one or more surfactants and/or polymers, optionally one or more reducing agents, optionally one or more biocides, and water, wherein the polishing composition has an alkaline pH. The polishing composition exhibits a high removal rate and low particle defects and low haze. The invention further relates to a method of chemically-mechanically polishing a substrate using the polishing composition described herein.

Polishing liquid composition

A polishing liquid composition that makes it possible to provide a polished substrate surface on which scratches and/or waviness are reduced, without impairing productivity, is provided, and further, a method for manufacturing and polishing a substrate using this polishing liquid composition is provided. The polishing liquid composition contains an abrasive, a water-soluble polymer, and water, wherein the water-soluble polymer has a sulfonic acid group, and has an aromatic ring in each of a main chain and a side chain. The method for manufacturing a substrate, and the method for polishing a substrate, include performing polishing by supplying the above-described polishing liquid composition to a surface to be polished of a substrate to be polished, bringing a polishing pad into contact with the surface to be polished, and moving the polishing pad and/or the substrate to be polished.

Heterocoagulate, and compositions and method for polishing and surface treatment

A heterocoagulate comprises first particles, having a particle size of at most 999 nm, on a second particle, having a particle size of at least 3 microns. The first particles comprise cerium oxide, and second particle comprises at least one member selected from the group consisting of silicon oxides, aluminum oxides and zirconium oxides.

Soil resistant floor treatment

A soil resistant floor surface treatment composition is provided. In particular, a composition comprises a maleic/olefin copolymer and an optional cleaning agent. Methods for treating a porous floor surface with a soil resistant agent and kits comprising a floor treatment composition, an applicator, a removal agent for removing a plurality of soils from a treated surface, and instructions for use are further provided by the present invention.

Polishing composition

To provide a polishing composition which can satisfy both suppression of the surface topography and a high stock removal rate, in a polishing step in the production of a wiring structure. A polishing composition comprising abrasive grains, a processing accelerator, a dishing inhibitor and water. Here, the abrasive grains comprise at least first abrasive grains and second abrasive grains; the ratio of an average primary particle size D L1 of the second abrasive grains to an average primary particle size D S1 of the first abrasive grains, D L1 /D S1 , is 5>D L1 /D S1 >1; the degree of association of the first abrasive grains is from 1.8 to 5; and the degree of association of the second abrasive grains is at most 2.5.

Processing liquid for suppressing pattern collapse of fine metal structure and method for producing fine metal structure using same

There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing at least one member selected from an imidazolium halide having an alkyl group containing 12, 14 or 16 carbon atoms, a pyridinium halide having an alkyl group containing 14 or 16 carbon atoms, an ammonium halide having an alkyl group containing 14, 16 or 18 carbon atoms, a betaine compound having an alkyl group containing 12, 14 or 16 carbon atoms, and an amine oxide compound having an alkyl group containing 14, 16 or 18 carbon atoms, and a method for producing a fine metal structure using the same.

Adjuvant for controlling polishing selectivity and chemical mechanical polishing slurry comprising the same

Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte.

Abrasive Free Silicon Chemical Mechanical Planarization

A chemical mechanical planarization method uses a chemical mechanical planarization composition that includes at least one nitrogen containing material and a pH modifying material, absent an abrasive material. The nitrogen containing material may be selected from a particular group of nitrogen containing polymers and corresponding nitrogen containing monomers. The chemical mechanical planarization method and the chemical mechanical planarization composition provide for planarizing a silicon material layer, such as but not limited to a poly-Si layer, in the presence of a silicon containing dielectric material layer, such as but not limited to a silicon oxide layer or a silicon nitride layer, with enhanced efficiency provided by an enhanced removal rate ratio.

Methods for etch of sin films

A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer.

Stabilized Chemical Mechanical Polishing Composition and Method of Polishing a Substrate

A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 20 wt % abrasive having an average particle size of 5 to 50 nm; and, 0.001 to 1 wt % of an adamantyl substance according to formula (II): wherein A is selected from N and P; wherein each R 8 is independently selected from hydrogen, a saturated or unsaturated C 1-15 alkyl group, C 6-15 aryl group, C 6-15 aralkyl group, C 6-15 alkaryl group; and, wherein the anion in formula (II) can be any anion that balances the positive charge on the cation in formula (II).

Sapphire polishing slurry and sapphire polishing method

Disclosed is a polishing slurry for sapphire polishing that is capable of obtaining polishing speeds and smooth surfaces during the polishing of sapphire substrates that are equivalent to or better than in prior polishing processes even if the number of polishers and polishing hours are reduced. Also disclosed is a sapphire substrate polishing method. The slurry includes alumina abrasives and has a pH adjusted to the range of 10.0 to 14.0, and the sapphire is polished by means of the CMP technique by applying said slurry. The aforementioned alumina abrasives more preferably include at least α-alumina, and the content thereof is more preferably 0.01 to 50 wt %. The mean particle size of the aforementioned alumina abrasives is preferably 0.05 to 10 μm.

Slurry for chemical-mechanical polishing of metals and use thereof

A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.

METHODS OF REFINING AND PRODUCING DIBASIC ESTERS AND ACIDS FROM NATURAL OIL FEEDSTOCKS

Methods are provided for refining natural oil feedstocks and producing dibasic esters and/or dibasic acids. The methods comprise reacting a terminal olefin with an internal olefin in the presence of a metathesis catalyst to form a dibasic ester and/or dibasic acid. In certain embodiments, the olefin esters are formed by reacting the feedstock in the presence of a metathesis catalyst under conditions sufficient to form a metathesized product comprising olefins and esters, separating the olefins from the esters in the metathesized product, and transesterifying the esters in the presence of an alcohol to form a transesterified product having olefin esters. 2. The method of claim 1 , wherein R is methyl.3. The method of claim 1 , wherein the weight ratio of the terminal olefin ester to the internal olefin ester is between 5:1 and 1:5.4. The method of claim 1 , wherein the weight ratio of the terminal olefin ester to the internal olefin ester is 1:1.5. The method of claim 1 , wherein the terminal olefin ester is selected from the group consisting of: 4-pentenoic acid ester claim 1 , 5-hexenoic acid ester claim 1 , 6-heptenoic acid ester claim 1 , 7-octenoic acid ester claim 1 , 8-nonenoic acid ester claim 1 , 9-decenoic acid ester claim 1 , 10-undecenoic acid ester claim 1 , 11-dodecenoic acid ester claim 1 , 12-tridecenoic acid ester claim 1 , 13-tetradecenoic acid ester claim 1 , 14-pentadecenoic acid ester claim 1 , 15-hexadecenoic acid ester claim 1 , 16-heptadecenoic acid ester claim 1 , 17-octadecenoic acid ester claim 1 , and mixtures thereof.6. The method of claim 1 , wherein the terminal olefin ester is 9-decenoic acid ester.7. The method of claim 1 , wherein the internal olefin ester is selected from the group consisting of: pentenoic acid esters claim 1 , hexenoic acid esters claim 1 , heptenoic acid esters claim 1 , octenoic acid esters claim 1 , nonenoic acid esters claim 1 , decenoic acid esters claim 1 , undecenoic acid esters claim 1 , dodecenoic acid ...

Food Compositions Comprising Tailored Oils

Methods and compositions for the production of food compositions, oils, fuels, oleochemicals, and other compounds in recombinant microorganisms are provided, including oil-bearing microorganisms and methods of low cost cultivation of such microorganisms. Microalgal cells containing exogenous genes encoding, for example, a lipase, a sucrose transporter, a sucrose invertase, a fructokinase, a polysaccharide-degrading enzyme, a keto acyl-ACP synthase enzyme, a fatty acyl-ACP thioesterase, a fatty acyl-CoA/aldehyde reductase, a fatty acyl-CoA reductase, a fatty aldehyde reductase, a fatty aldehyde decarbonylase, and/or an acyl carrier protein are useful in manufacturing food compositions, and transportation fuels such as renewable diesel, biodiesel, and renewable jet fuel, as well as oleochemicals such as functional fluids, surfactants, soaps and lubricants. 1. A composition produced by the process of hydroxylating an oil obtained from a microalga , the microalga comprising recombinant nucleic acids operable to reduce the activity of Δ12 fatty acid desaturase in the microalga so that the oil obtained comprises less than 3% 18:2 fatty acid.2. The composition of claim 1 , wherein the hydroxylating is followed by a condensation reaction.3. The composition of claim 1 , wherein the oil obtained comprises less than 2% 18:2 fatty acid.4. The composition of claim 1 , wherein the oil obtained comprises less than 1% 18:2 fatty acid.5. The composition of claim 1 , wherein the oil obtained comprises about 0% 18:2 fatty acid.6. The composition of claim 1 , wherein the composition is a polyurethane.7. The composition of claim 2 , wherein the composition is a polyurethane.8. The composition of claim 3 , wherein the composition is a polyurethane.9. The composition of claim 4 , wherein the composition is a polyurethane.10. The composition of claim 1 , wherein the composition is a coating.11. The composition of claim 1 , wherein the composition is an ink.12. The composition of claim 1 , ...

Dry Etching Agent and Dry Etching Method

A dry etching agent according to the present invention preferably contains: (A) 1,3,3,3-tetrafluoropropene; (B) at least one kind of additive gas selected from the group consisting of H, O, O, CO, CO, COCl, COF, CFOF, NO, F, NF, Cl, Br, I, CH, CH, CH, CH, CH, CH, CH, HF, HI, HBr, HCl, NO, NHand YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1≦n≦7); and (C) an inert gas. This dry etching agent has less effect on the global environment and can obtain a significant improvement in process window and address processing requirements such as low side etching ratio and high aspect ratio even without any special substrate excitation operation. 1. A dry etching agent comprising 1 ,3 ,3 ,3-tetrafluoropropene , an additive gas and an inert gas.2. The dry etching agent according to claim 1 , wherein the additive gas is an oxidizing gas or reducing gas.3. The dry etching agent according to claim 2 , wherein the oxidizing gas or reducing gas is at least one kind of gas selected from the group consisting of H claim 2 , O claim 2 , O claim 2 , CO claim 2 , CO claim 2 , COCl claim 2 , COF claim 2 , CFOF claim 2 , NO claim 2 , F claim 2 , NF claim 2 , Cl claim 2 , Br claim 2 , I claim 2 , CH claim 2 , CH claim 2 , CH claim 2 , CH claim 2 , CH claim 2 , CH claim 2 , CH claim 2 , HF claim 2 , HI claim 2 , HBr claim 2 , HCl claim 2 , NO claim 2 , NHand YFn (where Y represents Cl claim 2 , Br or I; and n represents an integer satisfying 1≦n≦7).4. The dry etching agent according to claim 1 , wherein the inert gas is at least one kind of gas selected from the group consisting of N claim 1 , He claim 1 , Ar claim 1 , Ne and Kr.5. The dry etching agent according to claim 1 , wherein the 1 claim 1 ,3 claim 1 ,3 claim 1 ,3-tetrafluoropropene is contained in an amount of 1 to 45 volume %.6. The dry etching agent according to claim 1 , further comprising at least one kind of gas selected from the group consisting of CF claim 1 , CFH claim 1 , CFH claim 1 , CFH claim 1 ...

POLISHING LIQUID COMPOSITION

A polishing liquid composition includes composite oxide particles containing cerium and zirconium, a dispersing agent, and an aqueous medium. A powder X-ray diffraction spectrum of the composite oxide particles obtained by CuKα1 ray (λ=0.154050 nm) irradiation includes a peak (first peak) having a peak top in a diffraction angle 2θ (θ is a Bragg angle) range of 28.61 to 29.67°, a peak (second peak) having a peak top in a diffraction angle 2θ range of 33.14 to 34.53°, a peak (third peak) having a peak top in a diffraction angle 2θ range of 47.57 to 49.63°, and a peak (fourth peak) having a peak top in a diffraction angle 2θ range of 56.45 to 58.91°. A half-width of the first peak is 0.8° or less. 1. A polishing method comprising:supplying a polishing liquid composition between an object to be polished and a polishing pad; andpolishing the object to be polished by moving the polishing pad relative to the object to be polished while the object to be polished is in contact with the polishing pad,the polishing liquid composition comprising:composite oxide particles containing cerium and zirconium;a dispersing agent; andan aqueous medium,wherein a powder X-ray diffraction spectrum of the composite oxide particles obtained by CuKα1 ray where λ=0.154050 nm, irradiation includesa first peak having a peak top in a diffraction angle 2θ range of 28.61 to 29.67°, wherein θ is a Bragg angle,a second peak having a peak top in a diffraction angle 2θ range of 33.14 in 34.53°,a third peak having a peak top in a diffraction angle 2θ range of 47.57 to 49.63°, anda fourth peak having a peak top in a diffraction angle 2θ range of 56.45 to 58.91°,wherein a half-width of the first peak is 0.8° or less, and{'sub': 1', '2', '1', '2', '1', '2, 'wherein when there is at least one peak of a peak aderived from a cerium oxide and a peak aderived from a zirconium oxide in the powder X-ray diffraction spectrum, both heights of peak tops of the peaks a, aare 0% of a height of the peak top of the ...

Slurry Composition For Polishing And Method Of Manufacturing Phase Change Memory Device Using The Same

A slurry composition includes an abrasive agent, an oxidizing agent, and a first adsorption inhibitor including a polyethylene oxide copolymer. A method of manufacturing a phase change memory device may include providing a substrate including an interlayer insulating film having a trench and a phase change material layer on the interlayer insulating film filling the trench, and performing chemical mechanical polishing on the phase change material layer using the slurry composition to form a phase change material pattern layer.

Methods For Processing Abrasive Slurry

Systems and methods are provided for processing abrasive slurry used in cutting operations. The slurry is mixed with a first solvent in a tank. The slurry is vibrated and/or ultrasonically agitated such that abrasive grain contained in the slurry separates from the other components of the slurry and the first solvent. After the abrasive grain has settled to a bottom portion of the container, the other components of the slurry and the first solvent are removed from the tank. The abrasive grain may then be washed with a second solvent. The abrasive grain is then heated and is suitable for reuse in an abrasive slurry. 1. A method for recovering abrasive grain from slurry , the method comprising the steps of:diluting the slurry with a first amount of a solvent in a tank, wherein the slurry includes at least a liquid suspension medium and the abrasive grain;vibrating the slurry and the first amount of the solvent;removing substantially all of a first remaining liquid suspension after at least half of the abrasive grain has settled to a bottom portion of the tank;adding a second amount of solvent to the tank and the settled abrasive grain contained therein;vibrating the slurry and the second amount of the solvent; andremoving substantially all of a second remaining liquid suspension after at least half of the abrasive grain has settled to the bottom portion of the tank.2. The method of wherein the first amount of solvent includes at least one of naphtha or d-limonene.3. The method of wherein the second amount of solvent includes at least one of water and a composition including water and a surfactant.4. The method of further comprising heating the settled abrasive grain after substantially all of the second remaining liquid suspension has been removed.5. The method of wherein the slurry is oil-based.6. The method of wherein the tank is substantially closed.7. The method of wherein vibrating the slurry and the first amount of the solvent comprises rotating an eccentric ...

METHOD AND COMPOSITIONS FOR PRODUCING OPTICALLY CLEAR PHOTOCATALYTIC COATINGS

The invention relates to a method and compositions for producing a hydrophilic coating on a surface of a solid material. The method comprises a cleaning step and a coating step. The cleaning step may be preceded by an initial cleaning step and it may optionally be succeded by a preconditioning step prior to the coating step. The cleaning step comprises cleaning and preconditioning a surface of a material by use of a first cleaning fluid composition comprising ceria (CeO) particles. The coating step comprises treatment by use of a coating fluid composition comprising photocatalytically active nanoparticles of titania (TiO). An advantage of the method of the invention is that the method may be carried out at temperatures in the range 5 to 50° C. No further heating is required. Thereby, the method may easily be used for treating materials such as windows, furniture, tiles, walls, etc. 1{'sub': 2', '2', '2, 'ceria (CeO) particles suspended in water, wherein said ceria (CeO2) particles have a primary particle size below 30 nm, wherein the average particle size of said ceria (CeO) particles in suspension is below 500 nm, wherein the concentration of said ceria (CeO) particles in said cleaning fluid composition are in the range 0.3-20.0 w/w %, wherein said cleaning fluid composition has a zeta potential above 30 mV, the pH value of said cleaning fluid composition is in the range 2-6, wherein said cleaning fluid composition further comprises a buffer to maintain said cleaning composition in a specific pH range, and wherein said buffer comprises acetic acid, citric acid, or nitric acid.'}. A cleaning fluid composition comprising at least one component resulting in a chemical mechanical polishing, the cleaning fluid composition, comprising: This application is a continuation of U.S. patent application Ser. No. 12/191,995, filed Aug. 14, 2008, which claims the benefit of priority to Danish Patent Application No. PA 2007 01161, filed Aug. 14, 2007, both of which are hereby ...

CERIUM OXIDE SLURRY, CERIUM OXIDE POLISHING SLURRY AND METHOD FOR POLISHING SUBSTRATE USING THE SAME

The present invention provides a cerium oxide slurry, a cerium oxide polishing slurry, and a method of polishing a substrate by using the same, wherein decrease of scratches and polish at high speed can be realized by reducing the content of coarse grains by improving in the disperse state of cerium oxide particles. The invention relates to a cerium oxide slurry containing cerium oxide particles, dispersant and water, in which the ratio of weight of cerium oxide/weight of dispersant is in a range of 20 to 80 and relates a cerium oxide polishing slurry comprising the cerium oxide slurry and additives such as a water-soluble polymer. 18-. (canceled)9. A method of producing a cerium oxide slurry comprisingoxidizing a cerium compound to obtain a cerium oxide,crushing the cerium oxide to obtain a cerium oxide particles,mixing the cerium oxide particles, a dispersant and water, and dispersing the cerium oxide particles in the water to obtain a cerium oxide disperse solution,microparticulating the cerium oxide particles by sedimentation and sorting the cerium oxide disperse solution to take out only the supernatant from the cerium oxide disperse solution,adjusting the solid matter concentration of the microparticulated cerium oxide disperse solution to prepare the cerium oxide slurry,measuring a ratio of weight of cerium oxide/weight of dispersant in the cerium oxide slurry, andadjusting the concentration of the dispersant in the cerium oxide slurry in order to obtain a ratio that settles in a range of 20 to 40,wherein mean size of particle of the cerium oxide particles in the cerium oxide slurry is 1 to 200 nm,wherein a weight of cerium oxide is the weight of the cerium oxide in the cerium oxide slurry, andwherein a weight of dispersant is the weight of the dispersant in the cerium oxide slurry obtained by measuring a concentration of the dispersant in the cerium oxide slurry after the cerium oxide particles are removed.10. The method of producing a cerium oxide slurry ...

INTERSECTING PLATE SHAPED ABRASIVE PARTICLES

Shaped abrasive particles comprising a ceramic and comprising a first plate integrally joined to a second plate at a predetermined angleβ. 1. Shaped abrasive particles comprising a ceramic and comprising a first plate integrally joined to a second plate at a predetermined angle β.2. The shaped abrasive particles of wherein the first plate or the second plate comprises a first major surface and a second major surface connected by at least one sidewall.3. The shaped abrasive particles of wherein a draft angle α between the second major surface and the at least one sidewall is between approximately 90 degrees to approximately 135 degrees.4. The shaped abrasive particles of wherein the draft angle α between the second major surface and the sidewall is between approximately 95 degrees to approximately 120 degrees.5. The shaped abrasive particles of wherein the first plate comprises a truncated triangular pyramid and the second plate comprises a truncated triangular pyramid.6. The shaped abrasive particles of wherein the first plate comprises a triangular prism and the second plate comprises a triangular prism.7. The shaped abrasive particles of wherein the first plate comprises a rhombus prism and the second plate comprises a triangular prism.8. The shaped abrasive particles of wherein the first plate comprises a truncated rhombus pyramid and the second plate comprises a truncated triangular pyramid.98. The shaped abrasive particles of claim 1 , claim 1 , claim 1 , claim 1 , claim 1 , claim 1 , claim 1 , or wherein the predetermined angle β is about 90 degrees.108. The shaped abrasive particles of claim 1 , claim 1 , claim 1 , claim 1 , claim 1 , claim 1 , claim 1 , or wherein the predetermined angle β is between about 20 degrees to about 85 degrees.11. The shaped abrasive particles of claim 1 , wherein the shaped abrasive particles comprise alpha alumina and are formed by molding a boehmite alumina sol gel.12. An abrasive article comprising the shaped abrasive particles ...

SYNTHETIC QUARTZ GLASS SUBSTRATE POLISHING SLURRY AND MANUFACTURE OF SYNTHETIC QUARTZ GLASS SUBSTRATE USING THE SAME

In polishing of synthetic quartz glass substrates, a polishing slurry is used comprising (i) an oligopeptide comprising recurring units of pentapeptide: -[valine-proline-glycine-valine-glycine]- and having a molecular weight of 800-150,000 or a copolymer of the pentapeptide with another monomer, and (ii) a colloidal solution. 1. A polishing slurry for synthetic quartz glass substrates , comprising(i) an oligopeptide comprising recurring units of pentapeptide: -[valine-proline-glycine-valine-glycine]- and having a molecular weight of 800 to 150,000 or a copolymer of the pentapeptide with another monomer copolymerizable therewith, and(ii) a colloidal solution.2. The polishing slurry of wherein component (i) comprises 2 to 20 recurring units of pentapeptide.3. The polishing slurry of wherein the colloidal solution is a colloidal silica water dispersion.4. The polishing slurry of claim 1 , having pH 8 to 11.5. The polishing slurry of claim 1 , further comprising at least one member selected from the group consisting of alkali metal hydroxides claim 1 , alkaline earth metal hydroxides claim 1 , basic salts claim 1 , organic amines claim 1 , ammonia and ammonium salts.6. A method of manufacturing a synthetic quartz glass substrate through rough polishing and final polishing claim 1 , wherein the final polishing step uses the polishing slurry of .7. The method of wherein the polishing slurry of is kept at a temperature below the phase transition temperature of said oligopeptide or copolymer and then fed to the final polishing step so that said oligopeptide or copolymer may absorb the polishing heat of the final polishing step. This non-provisional application claims priority under 35 U.S.C. §119(a) on Patent Application No. 2011-252633 filed in Japan on Nov. 18, 2011, the entire contents of which are hereby incorporated by reference.This invention relates to a polishing slurry for use in polishing of synthetic quartz glass substrates useful as the microelectronic material ...

METHOD FOR PRODUCING ABRASIVE GRAINS, METHOD FOR PRODUCING SLURRY, AND METHOD FOR PRODUCING POLISHING LIQUID

In the production method for abrasive grains according to the invention, an aqueous solution of a salt of a tetravalent metal element is mixed with an alkali solution, under conditions such that a prescribed parameter is 5.00 or greater, to obtain abrasive grains including a hydroxide of the tetravalent metal element. 115-. (canceled)17. The abrasive grain according to claim 16 , wherein the ΔpH is not greater than 5.00.18. The abrasive grain according to claim 16 , wherein the cycle count N is 1.00 minor greater.19. The abrasive grain according to claim 16 , wherein the substitution count M is not greater than 1.0 min.20. The abrasive grain according to claim 16 , wherein the linear speed u is 5.00 m/min or greater.21. The abrasive grain according to claim 16 , wherein the mixing rate v is not greater than 1.00×10m/min.22. The abrasive grain according to claim 16 , wherein the rotational speed R is 30 minor greater.23. The abrasive grain according to claim 16 , wherein the temperature T is not higher than 60° C.24. The abrasive grain according to claim 16 , wherein a concentration of the salt of a tetravalent metal element in the first liquid is 0.01 mol/L or greater.25. The abrasive grain according to claim 16 , wherein an alkaline concentration of the second liquid is not greater than 15.0 mol/L.26. The abrasive grain according to claim 16 , wherein a pH of the liquid mixture is 2.0 to 7.0.27. The abrasive grain according to claim 16 , wherein the tetravalent metal element is tetravalent cerium.28. A slurry obtained by mixing the abrasive grain according to with water.29. A polishing liquid obtained by mixing the slurry according to with an additive.30. A polishing liquid obtained by mixing the abrasive grain according to claim 16 , an additive and water.3127. A slurry obtained by mixing the abrasive grain according to claim with water.32. A polishing liquid obtained by mixing the slurry according to with an additive.33. A polishing liquid obtained by mixing the ...

METHOD FOR PRODUCING ABRASIVE GRAINS, METHOD FOR PRODUCING SLURRY, AND METHOD FOR PRODUCING POLISHING LIQUID

In the production method for abrasive grains according to the invention, an aqueous solution of a salt of a tetravalent metal element is mixed with an alkali solution, under conditions such that a prescribed parameter is 5.00 or greater, to obtain abrasive grains including a hydroxide of the tetravalent metal element. 115-. (canceled)17. The production method according to claim 16 , wherein the ΔpH is not greater than 5.00.18. The production method according to claim 16 , wherein the cycle count N is 1.00 minor greater.19. The production method according to claim 16 , wherein the substitution count M is not greater than 1.0 min.20. The production method according to claim 16 , wherein a base of the alkali solution is a nitrogen-containing heterocyclic organic base.21. The production method according to claim 16 , wherein the mixing rate v is not greater than 1.00×10m/min.22. The production method according to claim 16 , wherein the temperature T is not higher than 60° C.23. The production method according to claim 16 , wherein a concentration of the salt of a tetravalent metal element is the first liquid is 0.01 mol/L or greater.24. The production method according to claim 16 , wherein an alkaline concentration of the second liquid is not greater than 15.0 mol/L.25. The production method according to claim 16 , wherein a pH of the liquid mixture is 2.0 to 7.0.26. The production method according to claim 16 , wherein the tetravalent metal element is tetravalent cerium.27. A production method for a slurry claim 16 , wherein abrasive grains obtained by the production method according to are mixed with water to obtain a slurry.28. A production method for a polishing liquid claim 27 , wherein a slurry obtained by the production method according to is mixed with an additive to obtain a polishing liquid.29. A production method for a polishing liquid claim 16 , wherein abrasive grains obtained by the production method according to claim 16 , an additive and water are mixed ...

METHOD FOR RECOVERY OF CERIUM OXIDE

A method for recovery of cerium oxide from the abrasive waste composed mainly of cerium oxide arising from the polishing of glass substrates, said method including the steps of (i) adding to the abrasive waste an aqueous solution of a basic substance; (ii) adding to the resulting solution a precipitant, thereby forming precipitates composed mainly of cerium oxide, and removing the supernatant liquid; (iii) adding to the resulting precipitates a solution of an acid substance, thereby making said precipitate slightly acid to neutral; (iv) washing the precipitates with an organic solvent; and (v) drying and crushing the precipitates. 1. A method for recovery of cerium oxide from the abrasive waste composed mainly of cerium oxide which arises from the polishing of glass substrates , said method comprising the steps of:(i) adding to the abrasive waste an aqueous solution of a basic substance;(ii) adding to the resulting solution a precipitant, thereby forming precipitates composed mainly of cerium oxide, and removing the supernatant liquid;(iii) adding to the resulting precipitates a solution of an acid substance, thereby making said precipitate slightly acid to neutral;(iv) washing the resulting precipitates with an organic solvent; and(v) drying and crushing the precipitates.2. The method for recovery of cerium oxide of claim 1 , wherein the aqueous solution of a basic substance is that of sodium hydroxide having at least pH 12.3. The method for recovery of cerium oxide of claim 1 , wherein the precipitant is one selected from aluminum sulfate and polyaluminum chloride.4. The method for recovery of cerium oxide of claim 1 , wherein the acid substance is one selected from acetic acid claim 1 , carbonic acid claim 1 , dilute nitric acid claim 1 , and dilute hydrochloric acid.5. The method for recovery of cerium oxide of claim 1 , wherein the organic solvent is methanol. This non-provisional application claims priority under 35 U.S.C. §119(a) on Patent Application No. ...

AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATE MATERIALS FOR ELECTRICAL, MECHANICAL AND OPTICAL DEVICES

An aqueous polishing composition comprising (A) abrasive particles which are positively charged when dispersed in an aqueous medium having a pH in the range of from 3 to 9 as evidenced by the electrophoretic mobility; (B) water-soluble and water-dispersible hydroxy group containing components selected from (b1) aliphatic and cycloaliphatic hydroxycarboxylic acids, wherein the molar ratio of hydroxy groups to carboxylic acid groups is at least 1; (b2) esters and lactones of the hydroxycarboxylic acids (b1) having at least one hydroxy group; and (b3) mixtures thereof; and (C) water-soluble and water-dispersible polymer components selected from (c1) linear and branched alkylene oxide polymers; (c2) linear and branched, aliphatic and cycloaliphatic poly(N-vinylamide) polymers; and (c3) cationic polymeric flocculents having a weight average molecular weight of less than 100,000 Dalton.; and a process for polishing substrate materials for electrical, mechanical and optical devices. 115-. (canceled)16. An aqueous polishing composition , comprising:(A) abrasive particles which are positively charged when dispersed in an aqueous medium having a pH in the range of from 3 to 9, as evidenced by the electrophoretic mobility; (b1) aliphatic and cycloaliphatic hydroxycarboxylic acids comprising at least two carbon atoms, a hydroxy group, and a carboxylic acid group in the molecule, wherein the molar ratio of hydroxy groups to carboxylic acid groups is at least 1;', '(b2) esters of the hydroxycarboxylic acids (b1) comprising at least one group selected from the group consisting of lactone groups, esterified hydroxy groups, and esterified carboxylic acid groups, with the proviso that a hydroxy group is present in (b2); and, '(B) at least one water-soluble and water-dispersible hydroxy group comprising component selected from the group consisting of'} (c1) linear and branched alkylene oxide homopolymers and copolymers;', '(c2) linear and branched, aliphatic and cycloaliphatic poly(N- ...

AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES CONTAINING SILICON OXIDE DIELECTRIC AND POLYSILICON FILMS

An aqueous polishing composition has been found, the said aqueous polishing composition comprising (A) at least one type of abrasive particles which are positively charged when dispersed in an aqueous medium free from component (B) and having a pH in the range of from 3 to 9 as evidenced by the electrophoretic mobility; (B) at least one water-soluble polymer selected from the group consisting of linear and branched alkylene oxide homopolymers and copolymers; and (C) at least one anionic phosphate dispersing agent; and a process for polishing substrate materials for electrical, mechanical and optical devices making use of the aqueous polishing composition. 119-. (canceled)20. An aqueous polishing composition comprising:an abrasive particle comprising ceria;at least one water-soluble polymer selected from the group comprising a linear or branched alkylene oxide homopolymer and a linear or branched alkylene oxide copolymer; andan anionic phosphate dispersing agent,wherein the aqueous polishing composition comprises the at least one water-soluble polymer in an of from 0.001 to 5% by weight based on a total weight of the aqueous polishing composition andwherein the abrasive particle is positively charged, when dispersed in an aqueous medium which is free from the anionic phosphate dispersing agent and has a pH value of from 3 to 9, as evidenced by an electrohoretic mobility measurement.21. The aqueous polishing composition according to claim 20 , wherein the abrasive particle consists of ceria.22. The aqueous polishing composition according to claim 20 , comprising the abrasive particle in an amount of from 0.005 to 10% by weight based on the total weight of the aqueous polishing composition.23. The aqueous polishing composition according to claim 20 , wherein the at least one water-soluble polymer comprises at least one homopolymer or copolymer of ethylene oxide or propylene oxide.24. The aqueous polishing composition according to claim 20 , wherein the at least one ...

CMP Slurry Composition and Polishing Method Using the Same

A CMP slurry composition includes metal oxide particles, a diisocyanate compound, and deionized water. The CMP slurry composition is capable of selectively controlling polishing speed of a wafer surface having a convex portion and a concave portion, such that primary polishing and secondary polishing can be performed rapidly while stopping polishing of the nitride layer upon the secondary polishing. 1. A CMP slurry composition comprising: metal oxide particles; a diisocyanate compound; and deionized water.2. The CMP slurry composition according to claim 1 , wherein the metal oxide particles are prepared by calcination claim 1 , flame oxidation claim 1 , or thermal synthesis.3. The CMP slurry composition according to claim 1 , wherein the metal oxide particles comprise ceria (CeO) particles claim 1 , silica (SiO) particles claim 1 , alumina (AlO) particles claim 1 , titania (TiO) particles claim 1 , zirconia (ZrO) particles claim 1 , or a combination thereof.4. The CMP slurry composition according to claim 1 , wherein the metal oxide particles have an average particle diameter of about 70 nm to about 150 nm and a specific surface area of about 10 m/g to about 50 m/g.5. The CMP slurry composition according to claim 1 , wherein the metal oxide particles have a positive zeta potential.6. The CMP slurry composition according to claim 1 , wherein the metal oxide particles comprise ceria particles.7. The CMP slurry composition according to claim 1 , wherein the diisocyanate compound has a structure that contains a hydrophilic group at a terminal of a hydrophobic diisocyanate repeating moiety.9. The CMP slurry composition according to claim 1 , wherein the diisocyanate compound has a weight average molecular weight of about 100 g/mol to about 100 claim 1 ,000 g/mol.10. The CMP slurry composition according to claim 1 , further comprising: an amphoteric ion compound.11. The CMP slurry composition according to claim 10 , wherein the amphoteric ion compound comprises alanine ...

POLISHING SLURRY AND CHEMICAL MECHANICAL PLANARIZATION METHOD USING THE SAME

A polishing slurry for a chemical mechanical planarization process includes polishing particles and polyhedral nanoscale particles having a smaller size than the polishing particles and including a bond of silicon (Si) and oxygen (O). 1. A polishing slurry for planarizing a thin film containing two or more different kinds of metal or metalloid elements , the polishing slurry comprising:polishing particles; andnanoscale particles of polyhedral structure having a smaller size than the polishing particles, each of the nanoscale particles including at least one silicon (Si) atom bonded to an oxygen (O) atom.2. The polishing slurry of claim 1 , wherein the polishing particles includes alumina (AlO) claim 1 , ceria (CeO) claim 1 , zirconia (ZrO) claim 1 , titania (TiO) claim 1 , germania (GeO) claim 1 , chromium oxide (CrO) claim 1 , manganese oxide (MnO) claim 1 , silica (SiO) or a combination thereof.3. The polishing slurry of claim 1 , wherein the polishing particles have an average size of about 10 nm to about 150 nm.4. The polishing slurry of claim 1 , wherein the polishing particles have an average size of about 10 nm to about 100 nm.5. The polishing slurry of claim 1 , wherein the nanoscale particles of polyhedral structure include a polyhedral oligomeric silsesquioxane (POSS) compound.6. The polishing slurry of claim 1 , wherein the POSS compound includes a compound having a formula (RSiO)(R′SiO)(XSiO) claim 1 , wherein R and R′ are organic substituents claim 1 , X is a functional group claim 1 , each of m claim 1 , n claim 1 , and l is an integer equal to or greater than 0 (zero) claim 1 , and m+n+l≧6.7. The polishing slurry of claim 6 , wherein the organic substituents includes hydrogen claim 6 , an acid claim 6 , an alcohol-based functional group claim 6 , a carboxyl-based functional group claim 6 , an ester-based functional group claim 6 , an ether-based functional group claim 6 , an amine-based functional group claim 6 , a thiol-based functional group claim 6 ...

SURFACE TREATMENT COMPOSITION AND SURFACE TREATMENT METHOD USING SAME

A surface treatment composition of the present invention contains a first surfactant, a second surfactant, a basic compound, and water. The surface treatment composition has a pH of 8 or more. The second surfactant has a weight-average molecular weight one-half or less that of the first surfactant. The sum of the content of the first surfactant and the content of the second surfactant is 0.00001 to 0.1% by mass. 1. A surface treatment composition comprising a first surfactant , a second surfactant , a basic compound , and water , the surface treatment composition having a pH of 8 or more ,wherein the second surfactant has a weight-average molecular weight ½ times or less that of the first surfactant, and the sum of a content of the first surfactant and a content of the second surfactant is 0.00001 to 0.1% by mass.2. The surface treatment composition according to claim 1 , wherein a ratio of a total number of carbon atoms of the second surfactant to a sum of a total number of carbon atoms of the first surfactant and the total number of carbon atoms of the second surfactant is 1 to 90%.3. The surface treatment composition according to claim 1 , wherein the first surfactant has a weight-average molecular weight of 500 to 20 claim 1 ,000.4. The surface treatment composition according to claim 1 , wherein both the first surfactant and the second surfactant are nonionic surfactants.5. The surface treatment composition according to claim 1 , further comprising a particle component.6. The surface treatment composition according to claim 5 , wherein the particle component is silicon dioxide.7. The surface treatment composition according to claim 1 , further comprising a wetting agent.8. The surface treatment composition according to claim 1 , wherein the surface treatment composition is used in an application of subjecting a silicon wafer to surface treatment.9. The surface treatment composition according to claim 1 , wherein the surface treatment composition is used in an ...

Composition for polishing and composition for rinsing

A polishing composition for a silicon wafer and a rinsing composition for a silicon wafer according to the present invention contain a nonionic surfactant of a polyoxyethylene adduct. The HLB value of the polyoxyethylene adduct is 8 to 15. The weight-average molecular weight of the polyoxyethylene adduct is 1400 or less. The average number of moles of oxyethylene added in the polyoxyethylene adduct is 13 or less. The content of the polyoxyethylene adduct in each of the polishing composition and the rinsing composition is 0.00001 to 0.1% by mass.

PROCESS FOR PRODUCING POLISHING LIQUID COMPOSITION

Provided is a process for producing a polishing liquid composition with which it is possible to give a polished work that has a reduced surface roughness and a reduced amount of particles. The process for producing a polishing liquid composition involves a step in which a raw silica dispersion containing colloidal silica having an average primary-particle diameter of 1-100 nm is filtered through a filter including a filter aid, the filter aid having an average pore diameter, as measured by the mercury intrusion method, of 0.1-3.5 μm. 1. A process for producing a polishing liquid composition , comprising the step of filtering a raw silica dispersion containing colloidal silica having an average primary-particle diameter of 1 to 100 nm with a filter including a filter aid , wherein the filter aid has an average pore diameter , as measured by a mercury intrusion method , of 0.1 to 3.5 μm.2. A process for producing a polishing liquid composition according to claim 1 , wherein the filter aid is diatomaceous earth.3. A process for producing a polishing liquid composition according to claim 1 , wherein an integrated pore volume of 0.5 μm or less of the filter aid claim 1 , as measured by the mercury intrusion method claim 1 , is 2.5 mL/g or more.4. A process for producing a polishing liquid composition according to claim 1 , wherein the filter aid has a BET specific surface area of 4.0 m/g or more and an integrated pore volume of 0.15 μm or less claim 1 , as measured by a nitrogen adsorption method claim 1 , of 0.3 mL/g or more.5. A process for producing a polishing liquid composition according to claim 1 , wherein a water permeability of the filter aid obtained by filtering water with the filter aid under a condition of 0.015 MPa is 5.0×10mor less.6. A process for producing a polishing liquid composition according to claim 1 , comprising the following Steps 1 and 2:{'sup': '4', 'Step 1) filtering a raw silica dispersion containing colloidal silica having an average ...

ABRASIVE PARTICLES HAVING PARTICULAR SHAPES AND METHODS OF FORMING SUCH PARTICLES

A method of forming an abrasive article includes depositing a mixture into an opening of a substrate, contacting an exposed surface of the mixture in the opening to a texturing form to form a textured preform, and removing the mixture from the opening and forming an abrasive particle having a textured surface. 1. An abrasive article comprising:an abrasive particle comprising a body having a first surface, the first surface comprising a liquid management texture.2. The abrasive article of claim 1 , wherein the liquid management texture comprises protruding features.3. The abrasive article of claim 2 , wherein protruding features are arranged in a pattern having long-range order extending across the entire surface first surface defining a major surface of the body.4. The abrasive article of claim 1 , wherein the liquid management texture comprises intersecting grooves.5. The abrasive article of claim 4 , wherein the intersecting grooves define a plurality of t-shaped grooves extending across at least a portion of the first surface.6. The abrasive article of claim 5 , wherein the t-shaped grooves comprise a longitudinal groove and a lateral groove intersecting the longitudinal groove claim 5 , and wherein the longitudinal groove has a length greater than a length of the lateral groove.7. The abrasive article of claim 6 , wherein the length of the lateral groove is not greater than about 90% of the length of the longitudinal groove.8. The abrasive article of claim 5 , wherein the lateral groove has a width greater than a width of the longitudinal groove.9. (canceled)10. The abrasive article of claim 1 , wherein the intersecting grooves extend to an edge of the first surface claim 1 , wherein the edge comprises irregular protrusions and grooves or an irregular serrated surface.1112-. (canceled)13. The abrasive article of claim 1 , wherein the liquid management texture comprises a double-recessed surface feature claim 1 , the double-recessed surface feature comprising a ...

Slurry for planarizing photoresist

A slurry for planarization of a photoresist includes abrasive particles, an oxidizer, a surface activation chemical, and a solvent.

POLISHING COMPOSITION

A polishing composition contains colloidal silica particles having protrusions on the surfaces thereof. The average of values respectively obtained by dividing the height of a protrusion on the surface of each particle belonging to the part of the colloidal silica particles that has larger particle diameters than the volume average particle diameter of the colloidal silica particles by the width of a base portion of the same protrusion is no less than 0.245. Preferably, the part of the colloidal silica particles that has larger particle diameter than the volume average particle diameter of the colloidal silica particles has an average aspect ratio of no less than 1.15. Preferably, the protrusions on the surfaces of particles belonging to the part of the colloidal silica particles that has larger particle diameters than the volume average particle diameter of the colloidal silica particles have an average height of no less than 3.5 nm. 1. A polishing composition comprising colloidal silica particles each having a surface with a plurality of protrusions , wherein part of the colloidal silica particles has larger particle diameters than a volume average particle diameter of the colloidal silica particles , and wherein an average of values respectively obtained by dividing a height of a protrusion on a surface of each particle belonging to the part of the colloidal silica particles by a width of a base portion of the same protrusion is no less than 0.245.2. The polishing composition according to claim 1 , wherein the part of the colloidal silica particles that has larger particle diameter than a volume average particle diameters of the colloidal silica particles has an average aspect ratio of no less than 1.15.3. The polishing composition according to claim 1 , wherein the protrusions on surfaces of particles belonging to the part of the colloidal silica particles that has larger particle diameters than a volume average particle diameter of the colloidal silica ...

AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES FOR ELECTRICAL, MECHANICAL AND OPTICAL DEVICES

An aqueous polishing composition having a pH of 3 to 11 and comprising (A) abrasive particles which are positively charged when dispersed in an aqueous medium free from component (B) and of a pH of 3 to 9 as evidenced by the electrophoretic mobility; (B) anionic phosphate dispersing agents; and (C) a polyhydric alcohol component selected from the group consisting of (c1) water-soluble and water-dispersible, aliphatic and cycloaliphatic, monomeric, dimeric and oligomeric polyols having at least 4 hydroxy groups; (c2) a mixture consisting of (c21) water-soluble and water-dispersible, aliphatic and cycloaliphatic polyols having at least 2 hydroxy groups; and (c22) water-soluble or water-dispersible polymers selected from linear and branched alkylene oxide homopolymers and copolymers (c221); and linear and branched, aliphatic and cycloaliphatic poly(N-vinylamide) homopolymers and copolymers (c222); and (c3) mixtures of (c1) and (c2); and a process for polishing substrates for electrical, mechanical and optical devices. 119-. (canceled)20. An aqueous polishing composition having a pH of from 3 to 11 , the aqueous polishing composition comprising:abrasive particles;an anionic phosphate dispersing agent; andat least one polyhydric alcohol component selected from the group consisting of a polyhydric alcohol and a mixture,whereinthe abrasive particles are positively charged when dispersed in an aqueous medium which is free from the anionic phosphate dispersing agent and has a pH of from 3 to 9 as evidenced by an electrophoretic mobilitythe polyhydric alcohol is at least one selected from the group consisting of a water-soluble polyol, a water-dispersible polyol, an aliphatic polyol, a cycloaliphatic polyol, a monomeric polyol, a dimeric polyol, and an oligomeric polyol, each comprising at least 4 hydroxy groups that are not dissociable in the aqueous medium, and has an amount of from 0.005 to 5% by weight, based on a complete weight of the composition; and at least one ...

Aqueous polishing compositions containing n-substituted diazenium dioxides and/or n'-hydroxy-diazenium oxide salts

An aqueous polishing composition comprising (A) at least one water-soluble or water-dispersible compound selected from the group consisting of N-substituted diazenium dioxides and N′-hydroxy-diazenium oxide salts; and (B) at least one type of abrasive particles; the use of the compounds (A) for manufacturing electrical, mechanical and optical devices and a process for polishing substrate materials for electrical, mechanical and optical devices making use of the aqueous polishing composition.

TITANIUM NITRIDE REMOVAL

A chemical solution that removes undesired metal hard mask yet remains selective to the device wiring metallurgy and dielectric materials. The present disclosure decreases aspect ratio by selective removal of the metal hard mask before the metallization of the receiving structures without adverse damage to any existing metal or dielectric materials required to define the semiconductor device, e.g. copper metallurgy or device dielectric. Thus, an improved aspect ratio for metal fill without introducing any excessive trapezoidal cross-sectional character to the defined metal receiving structures of the device will result. 1. A chemical composition for removing a metal hard mask and etching residues from a microelectronic device comprising:at least one metal protectant at a concentration in a range from 1,000 p.p.m. to 50,000 p.p.m. in weight percentage;an oxidizing agent selected from peroxides and oxidants which do not leave a residue and do not adversely attack copper;a pH stabilizer including at least one quaternary ammonium salt or at least one quaternary ammonium alkali; andan aqueous solution.2. The chemical composition of claim 1 , further comprising a sequestering agent selected from amines and amino acids.3. The chemical composition of claim 2 , wherein the sequestering agent is at least one of 1 claim 2 ,2-cyclohexanediamine-N claim 2 ,N claim 2 ,N′ claim 2 ,N′-tetraacetic acid (CDTA) claim 2 , ethyenediaminetetraacetic acid (EDTA) and diethylenetriaminopentaacetic acid (DTPA).4. The chemical composition of claim 1 , wherein the metal protectant is at least one of benzotriazole claim 1 , 1 claim 1 ,2 claim 1 ,3 triazole claim 1 , 1 claim 1 ,3 claim 1 ,4 triazole claim 1 , 1 claim 1 ,2 claim 1 ,4 triazole claim 1 , imidazole claim 1 , methyl-thiol-triazole claim 1 , thiol-triazole claim 1 , and triazole acid.5. The chemical composition of claim 1 , wherein the oxidizing agent comprises at least one of hydrogen peroxide (HO) and benzoyl peroxide (CHO).6. The ...

POLISHING COMPOSITION

A polishing composition contains colloidal silica. The colloidal silica satisfies the expression A×D×E×F≧350,000 where “A” denotes the average aspect ratio (dimensionless) of the colloidal silica, “D” denotes the average particle diameter (units: nm) of the colloidal silica, “E” denotes the standard deviation of the particle size (units: nm) of the colloidal silica, and “F” denotes the volume fraction (units: %) of particles having a diameter of 1 to 300 nm in the colloidal silica. The volume fraction of particles having a diameter of 1 to 300 nm in the colloidal silica is 90% or greater. 1. A polishing composition comprising colloidal silica , whereinwhen “A” denotes an average aspect ratio (dimensionless) of the colloidal silica; “D” denotes an average particle diameter (units: nm) of the colloidal silica; “E” denotes a standard deviation of the particle diameter (units: nm) of the colloidal silica; and “F” denotes a volume fraction (units: %) of particles having a diameter of 1 to 300 nm in the colloidal silica, a value obtained by the expression A×D×E×F is 350,000 or greater, andthe volume fraction of particles having a diameter of 1 to 300 nm in the colloidal silica is 90% or greater.2. The polishing composition according to claim 1 , wherein when “B” denotes a standard deviation (dimensionless) of the aspect ratio of the colloidal silica claim 1 , a value obtained by the expression A×B×D×E×F is 30 claim 1 ,000 or greater.3. The polishing composition according to claim 1 , wherein the volume fraction of particles having a diameter of 50 nm or greater and an aspect ratio of 1.2 or greater in the colloidal silica is 50% or greater.4. The polishing composition according to claim 1 , wherein the volume fraction of particles having a diameter of greater than 300 nm in the colloidal silica is less than 2%. The present invention relates to a polishing composition used mainly in polishing an object-to-be-polished, such as semiconductor wafers including silicon wafers, ...

Chemical Mechanical Polishing Composition And Methods Relating Thereto

A method for chemical mechanical polishing of a semiconductor wafer containing a nonferrous metal is provided, comprising: providing a chemical mechanical polishing composition comprising 1 to 25 wt % of an oxidizer; 0.01 to 15 wt % of an inhibitor for the nonferrous metal; 0.005 to 5 wt % of a copolymer of poly(ethylene glycol) methyl ether(meth)acrylate and 1-vinylimidazole; and water; wherein the chemical mechanical polishing composition has an acidic pH; providing a chemical mechanical polishing pad; providing a semiconductor wafer containing the nonferrous metal; creating dynamic contact between the chemical mechanical polishing pad and the semiconductor wafer; and, dispensing the polishing solution at or near the interface between the chemical mechanical polishing pad and the semiconductor wafer. 1. A method for chemical mechanical polishing of a semiconductor wafer containing a nonferrous metal , comprising: (a) providing a chemical mechanical polishing composition comprising 1 to 25 wt % of an oxidizer; 0.01 to 15 wt % of an inhibitor for the nonferrous metal; 0.005 to 5 wt % of a copolymer of poly(ethylene glycol) methyl ether(meth)acrylate and 1-vinylimidazole; and water; wherein the chemical mechanical polishing composition has an acidic pH; (b) providing a chemical mechanical polishing pad; (c) providing a semiconductor wafer containing the nonferrous metal; (d) creating dynamic contact between the chemical mechanical polishing pad and the semiconductor wafer and (e) dispensing the polishing solution at or near the interface between the chemical mechanical polishing pad and the semiconductor wafer.2. The method of claim 1 , wherein the copolymer in the chemical mechanical polishing composition provided is a 9:1 to 1:9 (weight basis) copolymer of poly(ethylene glycol) methyl ether methacrylate and 1-vinylimidazole and has a weight average molecular weight of 5 claim 1 ,000 to 1 claim 1 ,000 claim 1 ,000.3. The method of claim 1 , wherein the chemical ...

ABRASIVE PARTICLES HAVING COMPLEX SHAPES AND METHODS OF FORMING SAME

An abrasive grain is disclosed and may include a body. The body may define a length (l), a height (h), and a width (w). In a particular aspect, the length is greater than or equal to the height and the height is greater than or equal to the width. Further, in a particular aspect, the body may include a primary aspect ratio defined by the ratio of length:height of at least about 2:1. The body may also include an upright orientation probability of at least about 50%. 117.-. (canceled)18. A shaped abrasive particle comprising:a body having a length (l), a width (w), and a height (h), wherein the body comprises a base surface end, an upper surface, and a side surface extending between the base surface and the upper surface, wherein the base surface comprises a different cross-sectional shape than a cross-sectional shape of the upper surface.1920.-. (canceled)21. The shaped abrasive particle of claim 18 , wherein the body comprises a three-pointed star having three arms extending from a central portion of the body claim 18 , and wherein at least one of the arms comprises a midpoint width that is less than a central portion width.2223.-. (canceled)24. The shaped abrasive particle of claim 21 , wherein the base surface defines a three-pointed star two-dimensional shape claim 21 , and wherein the upper surface comprises an arcuate three-pointed two-dimensional shape.2529.-. (canceled)30. The shaped abrasive particle of claim 21 , wherein the first side surface comprises a first section and a second section joined together at an interior angle claim 21 , wherein the interior angle defines an angle greater than about 90 degrees.3133.-. (canceled)34. The shaped abrasive particle of claim 18 , wherein the side surface comprises a fractured region intersecting at least a portion of an edge defining the base surface.3537.-. (canceled)38. The shaped abrasive particle of claim 21 , wherein at least one arm comprises a twist.39. The shaped abrasive particle of claim 21 , wherein the ...

Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate

The polishing liquid according to the embodiment comprises abrasive grains, an additive and water, wherein the abrasive grains satisfy either or both of the following conditions (a) and (b). (a) Producing absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %. (b) Producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

CMP COMPOSITIONS SELECTIVE FOR OXIDE AND NITRIDE WITH HIGH REMOVAL RATE AND LOW DEFECTIVITY

The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, one or more nonionic polymers, optionally one or more phosphonic acids, optionally one or more nitrogen-containing zwitterionic compounds, optionally one or more sulfonic acid copolymers, optionally one or more anionic copolymers, optionally one or more polymers comprising quaternary amines, optionally one or more compounds that adjust the pH of the polishing compositions, water, and optionally one or more additives. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon. 1. A chemical-mechanical polishing composition consisting essentially of:(a) a ceria abrasive,(b) one or more nonionic polymers selected from the group consisting of polyalkylene glycols, polyetheramines, polyethylene oxide/polypropylene oxide copolymers, polyacrylamide, polyvinylpyrrolidone, siloxane polyalkyleneoxide copolymers, hydrophobically modified polyacrylate copolymers, hydrophilic nonionic polymers, polysaccharides, and mixtures thereof,(c) one or more nitrogen-containing zwitterionic compounds,(d) optionally one or more phosphonic acids,(e) optionally one or more sulfonic acid copolymers,(f) optionally one or more anionic copolymers,(g) optionally one or more polymers comprising quaternary amines,(h) optionally one or more compounds that adjust the pH of the polishing composition, and(i) water.2. The polishing composition of claim 1 , wherein the ceria abrasive is a wet-process ceria.3. The polishing composition of claim 2 , wherein the wet process ceria is present in an amount of about 0.1 wt. % to about 10 wt. % of the polishing composition.4. The polishing composition of claim 1 , wherein the one or more nonionic polymers is present in an amount of about 1 ppm to about 3 claim 1 ,000 ppm of the polishing ...

AQUEOUS FLOOR POLISHING COMPOSITION

The present invention is the aqueous floor polishing composition which contains the polyoxyalkylene diester compound represented by the following general formula (1) and does not contain the phosphorus-containing plasticizer. Rand Rrepresent each independently alkyl groups having 1 to 24 carbon atoms, m represents an integer from 2 to 4, n represents a number from 2 to 40. 2. The aqueous floor polishing composition described in claim 1 , wherein m is 2 in the above general formula (1).3. The aqueous floor polishing composition described in claim 1 , wherein n is a number from 4 to 20 in the above general formula (1).4. The aqueous floor polishing composition described in claim 1 , wherein Rand Rare each independently alkyl groups having 2 to 14 carbon atoms in the above general formula (1).5. The aqueous floor polishing composition described in claim 1 , wherein Rand Rare both 2-ethylhexyl groups in the above general formula (1).6. The aqueous floor polishing composition described in wherein the content of the above polyoxyalkylene diester compound is from 0.5 to 20 mass % relative to the total solid content. The present invention relates to an aqueous floor polishing composition, and further specifically, relates to the aqueous floor polishing composition which has excellent surface smoothing properties (hereafter, also called as leveling properties), lustering properties and abrasion resistance (hereafter, also called as heel mark resistance properties), but does not contain an elemental phosphorus-containing plasticizer and does not negatively affect the environment. In this regard, “aqueous” means a concept comprised of an emulsion type, a dispersion type, a suspension type and a water solution type which use water as a solvent.Conventionally, with the purpose of protecting the floor surface and improving the beauty of the same, a floor polishing agent (hereafter, also called as a floor polish) has been applied to the floor surface of buildings so that ...

TRANSFER ASSISTED SCREEN PRINTING METHOD OF MAKING SHAPED ABRASIVE PARTICLES AND THE RESULTING SHAPED ABRASIVE PARTICLES

Shaped ceramic articles can be obtained by screen printing the desired shapes from a dispersion of a precursor of the ceramic onto a receiving surface using a transfer assisted technique that applies a differential pressure, at least partially drying the screen printed shapes, and firing them to generate the shaped ceramic articles. Shaped abrasive particles made using lower viscosity sol gels that tended to flow or creep after the screen printing formation were found to have higher grinding performance over screen printed shaped abrasive particles made with higher viscosity sol gels. 1. A process for the production of shaped ceramic articles by a screen printing process which comprises applying a dispersion of a ceramic precursor to a receiving surface through a printing screen comprising a plurality of apertures , removing the printing screen from the receiving surface to form a plurality of screen printed shapes while applying a differential pressure between a first side of the screen printed shape and a second side of the screen printed shape that is in contact with the receiving surface , at least partially drying the screen printed shapes remaining on the receiving surface and firing the screen printed shapes to form sintered shaped ceramic articles.2. The process according to wherein the precursor is a chemical precursor.3. The process according to wherein the dispersion comprises an alpha alumina precursor.4. The process according to wherein the dispersion is a boehmite alumina sol gel.5. The process according to wherein the sol gel has a solids content of between about 30% to about 60%.6. The process according to wherein the sol gel has a maximum yield stress and the maximum yield stress is between about 60 claim 4 ,000 Pa·Sec to about 5 claim 4 ,000 Pa·Sec.7. The process according to wherein the sol gel maximum yield stress is between about 15 claim 5 ,000 Pa·Sec to about 5 claim 5 ,000 Pa·Sec.8. The process according to wherein the applying a differential ...

Polishing liquid and method for polishing substrate using the polishing liquid

Provided is a polishing liquid including cerium oxide particles, an organic acid A, a polymer compound B having a carboxyl acid group or a carboxylate group, and water, wherein the organic acid A has at least one group selected from the group consisting of —COOM group, -Ph-OM group, —SO 3 M group and —PO 3 M 2 group, pKa of the organic acid A is less than 9, a content of the organic acid A is 0.001 to 1 mass % with respect to the total mass of the polishing liquid, and a content of the polymer compound B is 0.01 to 0.50 mass % with respect to the total mass of the polishing liquid, and pH is in the range of 4.0 to 7.0.

COMPOSITION FOR POLISHING AND METHOD OF POLISHING SEMICONDUCTOR SUBSTRATE USING SAME

Provided is a polishing composition containing abrasive grains, at least one type of alcohol compound selected from the group consisting of aliphatic alcohols with 2 to 6 carbon atoms and glycol ethers with 3 to 10 carbon atoms, at least one type of basic compound selected from the group consisting of quaternary ammonium salts and alkali metal salts, and water. The average primary particle diameter of the abrasive grains is 5 to 50 nm. The content of the alcohol compound in the polishing composition is 0.01 to 1% by mass. The polishing composition is mainly used in an application of polishing a semiconductor substrate surface. 1. A polishing composition comprising:abrasive grains;at least one type of alcohol compound selected from the group consisting of aliphatic alcohols with 2 to 6 carbon atoms and glycol ethers with 3 to 10 carbon atoms;at least one type of basic compound selected from the group consisting of quaternary ammonium salts and alkali metal salts; andwater, whereinthe abrasive grains have an average primary particle diameter of 5 to 50 nm, andthe alcohol compound is contained in the polishing composition in an amount of 0.01 to 1% by mass.2. The polishing composition according to claim 1 , wherein the basic compound is at least one type of compound selected from the group consisting of hydroxides of quaternary ammonium claim 1 , carbonates of quaternary ammonium claim 1 , bicarbonates of quaternary ammonium claim 1 , hydroxides of alkali metals claim 1 , carbonates of alkali metals claim 1 , and bicarbonates of alkali metals.3. The polishing composition according to claim 1 , wherein the basic compound is at least one type of compound selected from the group consisting of tetramethylammonium hydroxide claim 1 , tetramethylammonium carbonate claim 1 , tetramethylammonium bicarbonate claim 1 , potassium hydroxide claim 1 , potassium carbonate claim 1 , and potassium bicarbonate.4. The polishing composition according to claim 1 , wherein the abrasive ...

VERY LOW PACKING DENSITY CERAMIC ABRASIVE GRITS AND METHODS OF PRODUCING AND USING THE SAME

Producing and using very low packing density ceramic abrasive grits comprising various fused aluminum oxide materials with or without other oxide additives, fused aluminum oxide-zirconium oxide co-fusions with or without other oxide additives, or sintered sol gel aluminum oxide materials with or without other oxide additives where the ceramic abrasive grains are preferably made by crushing bubbles of the material. 130-. (canceled)31. A method for manufacturing a ceramic abrasive grain product comprising at least 50 percent by weight of particles having an average particle size of 500 to 1500 micrometers and an internal concave surface wall , an external convex surface wall and a thickness between the internal and external walls , said external wall being in the shape of a portion of an essentially spherical shape , essentially all of said particles of the ceramic abrasive grain product having a thickness less than twenty percent of the particle size dimensions of the ceramic abrasive grain product , said particles having irregular circumferential edges defined by circumferences of the internal and external walls comprising:a. forming ceramic bubbles having a diameter of between 800 and 4000 micrometers and a wall thickness of 0.002 to 0.15 inch and less than about ten percent of bubble diameter, andb. crushing the ceramic bubbles to form the product.32. The method of wherein from about 0.3 to about 0.7 weight percent of water insoluble ceramic material is added that melts at a temperature lower than the ceramic of the bubbles to reduce bubble wall thickness.33. The method of where the lower melting ceramic material is selected from the group consisting of silicon dioxide claim 32 , magnesium orthosilicate claim 32 , and aluminum silicate.34. The method of where the lower melting ceramic material is silicon dioxide.35. The method of wherein from about 0.1 to about 0.7 weight percent of oxides other than alumina and zirconia are present to cause weakened grain ...

ESTOLIDE COMPOUNDS, ESTAMIDE COMPOUNDS, AND LUBRICANT COMPOSITIONS CONTAINING THE SAME

Provided herein are compounds of the formula: 2. The at least one compound according to claim 1 , wherein x is claim 1 , independently for each occurrence claim 1 , an integer selected from 1 to 10.3. The at least one compound according to claim 1 , wherein y is claim 1 , independently for each occurrence claim 1 , an integer selected from 1 to 10.47-. (canceled)8. The at least one compound according to claim 1 , whereinx is, independently for each occurrence, an integer selected from 7 and 8; andy is, independently for each occurrence, an integer selected from 7 and 8.9. The at least one compound according to claim 1 , wherein x+y is claim 1 , independently for each occurrence claim 1 , an integer selected from 13 to 15.10. (canceled)11. (canceled)12. The at least one compound according to claim 1 , wherein n is an integer selected from 0 to 12.13. (canceled)14. The at least one compound according to claim 1 , wherein Ris a branched or unbranched Cto Calkyl that is saturated or unsaturated.15. The at least one compound according to claim 14 , wherein Ris selected from methyl claim 14 , ethyl claim 14 , propyl claim 14 , butyl claim 14 , pentyl claim 14 , hexyl claim 14 , heptyl claim 14 , octyl claim 14 , nonyl claim 14 , decanyl claim 14 , undecanyl claim 14 , dodecanyl claim 14 , tridecanyl claim 14 , tetradecanyl claim 14 , pentadecanyl claim 14 , hexadecanyl claim 14 , heptadecanyl claim 14 , octadecanyl claim 14 , nonadecanyl claim 14 , and icosanyl claim 14 , which are saturated or unsaturated and branched or unbranched.1621-. (canceled)22. The at least one compound according to claim 1 , wherein Z′ is claim 1 , independently for each occurrence claim 1 , selected from NR.23. The at least one compound according claim 1 , wherein Ris hydrogen for each occurrence.24. The at least one compound according to claim 1 , wherein Ris claim 1 , independently for each occurrence claim 1 , selected from a branched or unbranched Cto Calkyl that is saturated or unsaturated ...

CONTACT RELEASE CAPSULE USEFUL FOR CHEMICAL MECHANICAL PLANARIZATION SLURRY

The invention relates to a contact release capsule comprising a particle, a chemical payload, and a polymer coating, wherein the particle is impregnated with the chemical payload, and the chemical payload is held inside the particle by the polymer coating until the contact release capsule contacts a surface and a shearing force removes the polymer coating allowing the chemical payload to release outside the particle. The contact release capsule is useful in chemical mechanical planarization slurries. Particularly, the contact release capsule may comprise a glycine impregnated silica nanoparticle coated with a polymer, wherein the contact release capsule is dispersed in an aqueous solution and used in the copper chemical mechanical planarization process. Use of the contact release capsule in a slurry for copper chemical mechanical planarization may significantly improve planarization efficiency, decrease unwanted etching and corrosion, and improve dispersion stability. 1. A contact release capsule comprising a particle , a chemical payload , and a polymer coating , wherein:the particle comprises a pore or pores which can be impregnated with a chemical payload,the chemical payload remains contained in the particle due to the polymer coating present on the outside surface of the particle,when the particle contacts a surface and a pre-specified shearing force occurs, the polymer coating is removed, and the chemical payload is free to move away from the particle and into the outside environment.2. The contact release capsule of claim 1 , wherein the particle is selected from the group consisting of fumed or colloidal silica claim 1 , fumed or colloidal alumina claim 1 , ceria claim 1 , MnO claim 1 , ZnO claim 1 , TiO claim 1 , any polymer material claim 1 , and/or combinations thereof.3. The contact release capsule of claim 1 , wherein the particle is spherical.4. The contact release capsule of claim 3 , wherein the size of the particle is in the range of about 10 nm to ...

TiO2 BASED SCRUBBING GRANULES, AND METHODS OF MAKING AND USING SUCH TiO2 BASED SCRUBBING GRANULES

TiObased scrubbing granules, and methods of making and using such TiObased scrubbing granules are described. TiO-based scrubbing granules include granulated TiOand about 0.5% to about 20% dry weight inorganic salt binder. Other TiObased scrubbing granules include unsintered granulated TiOand about 0.5% to about 20% dry weight inorganic salt binder. Inorganic salt binder include sodium aluminate. Methods of making TiObased scrubbing granules include i) combining TiOparticles with inorganic salt binder to form TiO-binder mixture comprising from about 0.5% to about 20% dry weight binder; ii) granulating the TiO-binder mixture; and drying the granulated TiO-binder mixture to form TiO-based scrubbing granules. Methods of using such TiO-based scrubbing granules include introducing TiO-based scrubbing granules to remove adherent deposits on an inner surface of a reactor or heat exchanger during processes of forming TiOparticles and finishing the formed TiOparticles into finished pigment products. 1. TiO-based scrubbing granules comprising:{'sub': '2', 'i. granulated TiO;'}{'sub': '2', 'ii. sodium aluminate binder comprising from about 0.5% to about 20% by dry weight of the TiO-based scrubbing granules.'}2. TiO-based scrubbing granules of claim 1 , wherein the TiO-based scrubbing granules are dispersible in a TiOslurry during a process of making finished TiOpigment.3. TiO-based scrubbing granules of claim 1 , wherein the TiO-based scrubbing granules are unsintered.4. TiO2-based scrubbing granules of claim 1 , further comprising an inorganic salt.5. TiO-based scrubbing granules of claim 1 , further comprising an inorganic metal salt selected from the group consisting of sodium sulfate claim 1 , sodium phosphate claim 1 , sodium silicate claim 1 , sodium chloride claim 1 , sodium hexametaphosphate claim 1 , aluminum sulfate claim 1 , and combinations thereof.6. TiO-based scrubbing granules of claim 1 , wherein the TiO-based scrubbing granules have an average size from about 1 ...

METHOD FOR PRODUCING POLISHING LIQUID COMPOSITION

Provided is a method for producing a polishing composition capable of reducing scratches and particles of an object to be polished, after polishing. It is a method for producing a polishing composition including a step of filtering with a filtration filter a silica particle dispersion containing colloidal silica whose primary particles have an average particle diameter in a range of 1 to 100 nm, wherein the filtration filter includes diatomite cationized by use of a polyvalent amine compound having 9 to 200 cationic groups in the molecule. 1. A method for producing a polishing composition , the method comprising a step of filtering with a filtration filter a silica particle dispersion containing colloidal silica whose primary particles have an average particle diameter in a range of 1 to 100 nm ,wherein the filtration filter comprises diatomite cationized by use of a polyvalent amine compound having 9 to 200 cationic groups in the molecule.2. The method for producing a polishing composition according to claim 1 , wherein the polyvalent amine compound is polyalkyleneimine.3. The method for producing a polishing composition according to claim 1 , wherein the polyvalent amine compound has a number average molecular weight in a range of 400 to 9000.4. The method for producing a polishing composition according to claim 1 , wherein an average pore diameter of the diatomite obtained by a mercury intrusion method is 0.1 to 3.5 μm.5. The method for producing a polishing composition according to claim 1 , wherein an integrated pore volume of not larger than 0.15 μm of the diatomite obtained by a nitrogen adsorption method is not less than 0.3 mL/g.6. The method for producing a polishing composition according to claim 1 , wherein the diatomite has a BET specific surface area of not less than 4.0 m/g.7. The method for producing a polishing composition according to claim 1 , comprising a step of producing a filtration filter comprising the cationized diatomite.89-. (canceled)10. ...

CMP SLURRY REGENERATION APPARATUS AND METHOD

The CMP slurry regeneration apparatus for regenerating the CMP slurry used for a CMP process patterning metal conductive elements on a semiconductor circuit comprises a gravity separator for precipitating solids in a diluted waste slurry used in the CMP process by gravity sedimentation; a concentrated slurry container for reserving the solid through the gravity sedimentation in the gravity separator as concentrated slurry ; a solid-liquid separator for catching components contained in the waste slurry as rinsed components through rinsing the waste slurry by remaining hydroxide corresponding to small amount metal ion while removing soluble and solid components formed by the CMP process; and a regenerated slurry container for regenerating the small amount metal ion from the rinsed components. 1. A CMP slurry regeneration apparatus for regenerating the CMP slurry used for a CMP process patterning metal conductive elements on a semiconductor circuit , the CMP slurry regeneration apparatus comprising:a. a gravity separator for precipitating solids in a diluted waste slurry used in the CMP process by gravity sedimentation;b. a concentrated slurry container for reserving the solid through the gravity sedimentation in the gravity separator as concentrated slurry;c. a solid-liquid separator for catching components contained in the waste slurry as rinsed components through rinsing the waste slurry by remaining hydroxide corresponding to small amount metal ion while removing soluble and solid components formed by the CMP process; andd. a regenerated slurry container for regenerating the small amount metal ion from the rinsed components.2. The apparatus of claim 1 , wherein the metal conductive elements comprise tungsten.3. The apparatus of claim 1 , wherein the solids comprise the hydroxide of the small amount metal ion.4. The apparatus of claim 1 , wherein the soluble and solid components comprise a tungsten element and an iron element.5. The apparatus of claim 1 , wherein ...

POLISHING COMPOSITION, POLISHING METHOD USING SAME, AND SUBSTRATE PRODUCTION METHOD

Provided is a polishing composition characterized by: including at least one of either organic acid or organic salt and including a composition (A) including hydroxyethyl cellulose, ammonia, abrasive grains, and water. The electrical conductivity of the polishing composition is 1.2 to 8 times the electrical conductivity of the composition (A). The polishing composition is mainly used in substrate surface polishing applications. 1. A polishing composition comprising a composition (A) and at least one selected from an organic acid and an organic salt , whereinthe composition (A) contains hydroxyethyl cellulose, ammonia, abrasive grains, and water, andthe electrical conductivity of the polishing composition is 1.2 to 8 times the electrical conductivity of the composition (A).2. The polishing composition according to claim 1 , further comprising a surfactant.3. A method for polishing a substrate surface by using the polishing composition according to .4. A method for manufacturing a substrate claim 3 , comprising a step for polishing a substrate surface by using the method according to .5. A method for polishing a substrate surface by using the polishing composition according to .6. A method for manufacturing a substrate claim 5 , comprising a step for polishing a substrate surface by using the method according to . The present invention relates to a polishing composition for use in polishing a substrate, a method for polishing a substrate by using the polishing composition, and a method for producing a substrate.In semiconductor devices such as ULSIs (Ultra Large Scale Integrations) used in computers, movement to smaller design rules in order to realize higher integration and higher operation speed has been accelerated year by year. With this tendency, there are an increased number of cases where small defects on the surface of a substrate used in a semiconductor device have an adverse effect on the performance of the semiconductor device. Accordingly, overcoming nano- ...

Fine Abrasive Particles and Process for Producing Same

Provided are fine abrasive particles which have a high rate of polishing and generate few polishing flaws. A process for producing then abrasive particles is also provided in which the fine abrasive particles have a reduced coefficient of fluctuation in particle diameter, the production steps are simple, and the production cost is low. The fine abrasive particles comprise cerium oxide, at least one element selected from La, Pr, Nd, Sm, and Eu, and one or more element selected from Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and are characterized in that the cerium oxide has a Ce content of 20 mol % or higher and that the sum (mol %) of the content of the at least one element selected from La, Pr, Nd, Sm, Nd Eu and the content of Ce in the cerium oxide is greater than the sum (mol %) of the contents of the one or more elements selected from Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu. 1. Fine abrasive particles comprising cerium oxide , at least one type of element selected from the group consisting of La , Pr , Nd , Sm and Eu , and at least one type of element selected from the group consisting of Y , Gd , Tb , Dy , Ho , Er , Tm , Yb and Lu , whereina content of Ce of the cerium oxide in the fine abrasive particles is 20 mol % or more;a sum of a content (mol %) of the at least one type of element selected from the group consisting of La, Pr, Nd, Sm and Eu in the fine abrasive particles and the content of Ce of the cerium oxide is larger than a sum of a content (mol %) of the at least one type of element selected from the group consisting of Y, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu in the fine abrasive particles; andthe fine abrasive particles are spherical.2. The fine abrasive particles of claim 1 , wherein the content of Ce of the cerium oxide ranges from 40 to 70 mol %.3. The fine abrasive particles of claim 1 , wherein the sum of the content (mol %) of the at least one type of element selected from the group consisting of Y claim 1 , Gd claim 1 , Tb claim 1 , Dy claim 1 , Ho ...

CHEMICAL LIQUID PREPARATION METHOD OF PREPARING A CHEMICAL LIQUID FOR SUBSTRATE PROCESSING, CHEMICAL LIQUID PREPARATION UNIT PREPARING A CHEMICAL LIQUID FOR SUBSTRATE PROCESSING, AND SUBSTRATE PROCESSING SYSTEM

A substrate processing system includes a chemical liquid preparation unit preparing a chemical liquid to be supplied to a substrate and a processing unit which supplies the chemical liquid, prepared by the chemical liquid preparation unit, to the substrate. The chemical liquid preparation unit supplies an oxygen-containing gas, containing oxygen gas, to a TMAH-containing chemical liquid, containing TMAH (tetramethylammoniumhydroxide),tomaketheoxygen-containing gas dissolve in the TMAH-containing chemical liquid. 1. A chemical liquid preparation method of preparing a chemical liquid for substrate processing , comprising:a step of supplying an oxygen-containing gas that contains oxygen gas to a TMAH-containing chemical liquid that contains TMAH (tetramethylammonium hydroxide) to make the oxygen-containing gas dissolve in the TMAH-containing chemical liquid.2. The chemical liquid preparation method of preparing a chemical liquid for substrate processing according to claim 1 , wherein the oxygen-containing gas is oxygen gas or cleaned dry air.3. The chemical liquid preparation method of preparing a chemical liquid for substrate processing according to claim 1 , comprising:a measurement step of measuring a dissolved oxygen concentration in the TMAH-containing chemical liquid;a nitrogen dissolution step of supplying a nitrogen-containing gas containing nitrogen gas to the TMAH-containing chemical liquid to make the nitrogen-containing gas dissolve in the TMAH-containing chemical liquid when the dissolved oxygen concentration measured in the measurement step is higher than a predetermined concentration; andan oxygen dissolution step of supplying the oxygen-containing gas to the TMAH-containing chemical liquid to make the oxygen-containing gas dissolve in the TMAH-containing chemical liquid when the dissolved oxygen concentration measured in the measurement step is lower than the predetermined concentration.4. A chemical liquid preparation unit preparing a chemical liquid ...

Separating Fluid, Method And System For Separating Multilayer Systems

A separating fluid, method and use for separating multilayer systems, especially photovoltaic modules, for the purpose of recycling, which allow the separation of multilayer systems. Especially photovoltaic modules, in comparatively simple manner in terms of the processes used, in as environmentally friendly a manner as possible, at high recycling rates. For this purpose, the separating fluid is a nanoscale dispersion or a precursor thereof. 1. A separating fluid for separating multilayer systems , the separating fluid comprising a nanoscale dispersion , wherein the nanoscale dispersion comprises an organic component , an aqueous component and at least one surfactant , and wherein at least one of the surfactants is selected from the group consisting of anionic surfactants , non-ionic surfactants and amphoteric surfactants.2. A separating fluid according to claim 1 , wherein the aqueous component has a concentration of at least 60 percent by weight.3. A separating fluid according to claim 1 , wherein the at least one surfactant comprises at least one non-ionic surfactant and one or several surfactants from the group formed by anionic surfactants and amphoteric surfactants.4. The separating fluid according to claim 1 , wherein the non-ionic surfactant has a concentration in the area from 2 percent by weight to 12 percent by weight.5. The separating fluid according to claim 1 , wherein at least one of the anionic surfactant or the amphoteric surfactant has a concentration of no more than 10 percent by weight.6. The separating fluid according to wherein further comprising a hydrotrope for stabilization.7. The separating fluid of claim 1 , further comprising a co-surfactant selected from the group consisting of short-chain alcohols.8. The separating fluid according to claim 1 , further comprising a basic component.9. A method for separating multilayer systems comprising:washing the multilayer systems with a separating fluid comprising a nanoscale dispersion to form ...

POLISHING COMPOSITION

Provided is a polishing composition containing at least aluminum oxide abrasive grains and water, and having a pH of 8.5 or higher. The aluminum oxide abrasive grains have a specific surface area of 20 m/g or less. It is preferable for the aluminum oxide abrasive grains to have an average secondary particle size of 0.1 μm or more and 20 μm or less. The polishing composition is used for polishing hard and brittle materials having a Vickers hardness of 1,500 Hv or higher, such as sapphire, silicon carbide, and gallium nitride. 1. A polishing composition used for polishing a hard and brittle material having a Vickers hardness of 1 ,500 Hv or higher , comprising at least aluminum oxide abrasive grains and water , wherein the polishing composition has a pH of 8.5 or higher , and wherein the aluminum oxide abrasive grains have a specific surface area of 20 m/g or less.2. The polishing composition according to claim 1 , wherein the aluminum oxide abrasive grains have an average secondary particle size of 0.1 μm or more and 20 μm or less.3. The polishing composition according to claim 1 , wherein the hard and brittle material is sapphire claim 1 , silicon carbide claim 1 , or gallium nitride.4. A polishing method comprising:providing a hard and brittle material; and{'sup': '2', 'polishing the hard and brittle material with a polishing composition, wherein the polishing composition contains at least aluminum oxide abrasive grains and water, wherein the polishing composition has a pH of 8.5 or higher, and wherein the aluminum oxide abrasive grains have a specific surface area of 20 m/g or less.'}5. A method for producing a polished substrate composed of a hard and brittle material claim 1 , comprising:providing a substrate composed of a hard and brittle material; and{'sup': '2', 'polishing the substrate with a polishing composition, wherein the polishing composition contains at least aluminum oxide abrasive grains and water, wherein the polishing composition has a pH of 8.5 ...

COMPOSITION AND METHOD FOR POLISHING MOLYBDENUM

The present invention provides compositions and methods for polishing a molybdenum metal-containing surface. A polishing composition (slurry) described herein comprises an abrasive concentration of an inorganic particulate abrasive material (e.g., alumina or silica) suspended in an acidic aqueous medium containing a water soluble surface active material and an oxidizing agent. The surface active material is selected based on the zeta potential of the particulate abrasive, such that when the abrasive has a positive zeta potential, the surface active material comprises a cationic material, and when the particulate abrasive has a negative zeta potential, the surface active material comprises an anionic material, a nonionic material, or a combination thereof. 1. An aqueous chemical-mechanical polishing (CMP) composition for polishing a molybdenum-containing substrate , the composition comprising an aqueous carrier having a pH in the range of about 3 to about 6 and containing , at point of use:(a) a particulate abrasive selected from the group consisting of a silica abrasive and an alumina abrasive;(b) a water soluble surface active material; and(c) an oxidizing agent;wherein the surface active material is selected based on the zeta potential of the particulate abrasive, such that when the abrasive has a positive zeta potential, the surface active material comprises a cationic material, and when the particulate abrasive has a negative zeta potential, the surface active material comprises an anionic material, a nonionic material, or a combination thereof.2. The CMP composition of wherein the particulate abrasive comprises alpha-alumina and the surface active agent is a cationic material.3. The CMP composition of wherein the cationic material is a cationic polymer.4. The CMP composition of wherein the cationic polymer comprises a poly(methacryloxyethyltrimethylammonium) halide.5. The CMP composition of wherein oxidizing agent comprises hydrogen peroxide.6. The CMP ...

SHAPED ABRASIVE PARTICLES AND METHODS OF FORMING SAME

A method of forming a shaped abrasive particle includes applying a mixture into a shaping assembly within an application zone and directing an ejection material at the mixture in the shaping assembly under a predetermined force, removing the mixture from the shaping assembly and forming a precursor shaped abrasive particle. 1. A method comprising:applying a mixture into a shaping assembly within an application zone; anddirecting an ejection material at the mixture in the shaping assembly under a predetermined force, removing the mixture from the shaping assembly and forming a precursor shaped abrasive particle.2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. (canceled)12. (canceled)13. (canceled)14. (canceled)15. (canceled)16. (canceled)17. (canceled)18. (canceled)19. (canceled)20. (canceled)21. (canceled)22. (canceled)23. (canceled)24. (canceled)25. (canceled)26. (canceled)27. The method of claim 1 , wherein the mixture comprises a change in weight of less than about 5% for a total weight of the mixture for a duration the mixture is in an opening of the shaping assembly.28. (canceled)29. (canceled)30. (canceled)31. The method of claim 1 , wherein an average residence time of the mixture in an opening of the shaping assembly is less than about 18 minutes.32. (canceled)33. The method of claim 2 , wherein removing the mixture includes directing an ejection material at the mixture in the shaping assembly under a predetermined force of at least about 0.1 N.34. (canceled)35. (canceled)36. (canceled)37. (canceled)38. (canceled)39. (canceled)40. The method of claim 1 , wherein an opening in the shaping assembly comprises a two dimensional shape as viewed in a plane defined by the length and the width of the screen selected from the group consisting of polygons claim 1 , ellipsoids claim 1 , numerals claim 1 , Greek alphabet characters claim 1 , Latin alphabet characters claim 1 , Russian alphabet ...

NATURAL OIL METATHESIS COMPOSITIONS AND METHODS

A metathesized natural oil composition comprising (i) a mixture olefins and/or esters, or (ii) a metathesized natural oil, is disclosed. The metathesized natural oil composition has a number average molecular weight in the range from about 100 g/mol to about 150,000 g/mol, a weight average molecular weight in the range from about 1,000 g/mol to about 100,000 g/mol, a z-average molecular weight in the range from about 5,000 g/mol to about 1,000,000 g/mol, and a polydispersity index of about 1 to about 20. The metathesized natural oil composition is metathesized at least once. 1. A metathesized natural oil composition comprising (i) a mixture olefins and/or esters , or (ii) a metathesized natural oil , wherein the metathesized natural oil composition has a number average molecular weight in the range from about 100 g/mol to about 150 ,000 g/mol , a weight average molecular weight in the range from about 1 ,000 g/mol to about 100 ,000 g/mol , a z-average molecular weight in the range from about 5 ,000 g/mol to about 1 ,000 ,000 g/mol , and a polydispersity index of about 1 to about 20 , and further wherein the metathesized natural oil composition is metathesized at least once.2. The metathesized natural oil composition of claim 1 , wherein the metathesized natural oil composition has a number average molecular weight in the range from about 2 claim 1 ,000 g/mol to about 4 claim 1 ,000 g/mol claim 1 , a weight average molecular weight in the range from about 7 claim 1 ,000 g/mol to about 35 claim 1 ,000 g/mol claim 1 , and a z-average molecular weight in the range from about 10 claim 1 ,000 g/mol to about 125 claim 1 ,000 g/mol claim 1 , and a polydispersity index of about 2 to about 12.3. The metathesized natural oil composition of claim 1 , wherein the metathesized natural oil composition has a number average molecular weight in the range from about 2 claim 1 ,300 g/mol to about 3 claim 1 ,400 g/mol claim 1 , a weight average molecular weight in the range from about 9 ...

UNIQUE CUBIC BORON NITRIDE CRYSTALS AND METHOD OF MANUFACTURING THEM

A superabrasive material and method of making the superabrasive material are provided. The superabrasive material may comprise a core and an outgrown region. The core may have a single crystal structure. The outgrown region may also contain a single crystal. The single crystal may extend outwards from the core. The outgrown region may have a lower toughness index than that of the core. 1. A superabrasive material comprising:a core having a single crystal structure; andan outgrown region extending outwards from the core, wherein the outgrown region has a lower toughness index than that of the core.2. The superabrasive material of claim 1 , wherein the outgrown region comprises a material selected from a group of cubic boron nitride claim 1 , diamond and diamond composite materials.3. The superabrasive material of claim 1 , wherein the core comprises a material selected from a group of cubic boron nitride claim 1 , diamond and diamond composite materials.4. The superabrasive material of claim 1 , wherein the single crystal structure of the core has different chemical compositions as that of the outgrown region.5. The superabrasive material of claim 1 , wherein the single crystal structure of the core has same chemical composition as that of the outgrown region.6. The superabrasive material of claim 1 , wherein the single crystal structure of the core is substantially faceted.7. The superabrasive material of claim 1 , wherein the outgrown region are substantially deformed.8. The superabrasive material of claim 1 , wherein the outgrown region is blocky and rough.9. A method claim 1 , comprising:providing a plurality of hexagonal boron nitride (hBN) grains;providing a catalyst;subjecting the plurality of hBN grains and the catalyst to a first high pressure for a first time period sufficient to form a core having a single crystal structure; andsubjecting the plurality of hBN grains and the catalyst to a second high pressure for a second time period sufficient to form an ...

METHOD OF FORMING A CAPACITOR STRUCTURE, AND A SILICON ETCHING LIQUID USED IN THIS METHOD

A method of forming a capacitor structure, which comprises: applying a silicon etching liquid which contains an alkali compound and a hydroxylamine compound in combination, with the pH adjusted to 11 or more, to a polycrystalline silicon film or an amorphous silicon film, removing a part or all of the polycrystalline silicon film or amorphous silicon film, and forming concave and convex shapes that constitute a capacitor. 1. A method of forming a capacitor structure , which comprises: applying a silicon etching liquid which contains an alkali compound and a hydroxylamine compound in combination , with the pH adjusted to 11 or more , to a polycrystalline silicon film or an amorphous silicon film , removing a part or all of the polycrystalline silicon film or amorphous silicon film , and forming concave and convex shapes that constitute a capacitor.2. The method according to claim 1 , wherein the area with the concave and convex shapes has a cylinder bore that is formed as a result of removal of the silicon film using the silicon etching liquid.3. The method according to claim 1 , further comprising a step of removing an oxide film formed on the silicon film before the silicon etching liquid is applied.4. The method according to claim 2 , wherein the area with the concave and convex shapes that constitute the capacitor structure includes TiN claim 2 , and the cylinder bore has an aspect ratio of 15 or more.5. The method according to claim 1 , wherein the concentration of the alkali compound is 3 to 25 mass %.6. The method according to claim 1 , wherein the concentration of the hydroxylamine compound is 0.1 to 15 mass %.7. The method as set forth in claim 1 , wherein the silicon etching liquid further contains alcohol compounds claim 1 , sulfoxide compounds or ether compounds.8. A silicon etching liquid for preparing a capacitor structure by removing a part or all of a polycrystalline silicon film or an amorphous silicon film to shape concave and convex shapes that ...

POLISHING SLURRY AND POLISHING METHOD THEREOF

The present invention provides a polishing technique capable of polishing, at a high speed, a substrate containing Al and having high hardness, such as single-crystal sapphire substrate, and capable of providing a polished surface of high accuracy. The present invention relates to a polishing slurry for polishing a substrate containing aluminum, comprising abrasive grains, an inorganic boron compound having a solubility in water at 20° C. of 0.1 g/100 g—HO or more, and water. In the present invention, it is preferable that the content of the inorganic boron compound is 0.1% by mass to 20% by mass in terms of boron atoms based on the polishing slurry. 1. A polishing slurry for polishing a substrate containing aluminum , comprising abrasive grains , an inorganic boron compound having a solubility in water at 20° C. of 0.1 g/100 g-HO or more , and water.2. The polishing slurry according to claim 1 , wherein a content of the inorganic boron compound is 0.1% by mass to 20% by mass in terms of boron atoms based on the polishing slurry.3. The polishing slurry according to claim 1 , wherein the aluminum contained in the substrate is aluminum oxide.4. A polishing method claim 1 , comprising polishing a substrate containing aluminum by using a polishing slurry composed of abrasive grains claim 1 , an inorganic boron compound having a solubility in water at 20° C. of 0.1 g/100 g-HO or more claim 1 , and water.5. The polishing slurry according to claim 2 , wherein the aluminum contained in the substrate is aluminum oxide. 1. Field of the InventionThe present invention relates to a polishing slurry containing an inorganic boron compound, and particularly to a polishing slurry suitable for polishing a substrate containing Al.2. Description of the Related ArtIt is known that substrates such as single-crystal sapphire substrates containing aluminum (hereinafter may be referred to as Al) have very high hardness and therefore cannot be polished at high polishing rates (for example, ...

CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A POLYMERIC POLYAMINE

A chemical-mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a composite or mixture thereof, (B) a polymeric polyamine or a salt thereof comprising at least one type of pendant group (Y) which comprises at least one moiety (Z), wherein (Z) is a carboxylate (—COOR), sulfonate (—SOR), sulfate (—O—SOR), phosphonate (—P(═O) (OR)(OR)), phosphate (—O—P(═O)(OR)(OR)), carboxylic acid (—COOH), sulfonic acid (—SOH), sulfuric acid (—O—SO—), phosphonic acid (—P(═O)(OH)), phosphoric acid (—O—P(═O)(OH)) moiety, or their deprotonated forms, Ris alkyl, aryl, alkylaryl, or arylalkyl Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris H, alkyl, aryl, alkylaryl, or arylalkyl, Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium. 1. A chemical-mechanical polishing (CMP) composition comprising(A) inorganic particles, organic particles, or a composite or mixture thereof,(B) a polymeric polyamine or a salt thereof comprising a pendant group (Y) which comprises a moiety (Z),{'sup': 1', '2', '3', '4', '5', '6', '7, 'sub': 3', '3', '3', '3', '2', '2, 'wherein (Z) is a carboxylate (—COOR), sulfonate (—SOR), sulfate (—O—SOR), phosphonate (—P(═O)(OR)(OR)), phosphate (—O—P(═O)(OR)(OR)), carboxylic acid (—COOH), sulfonic acid (—SOH), sulfuric acid (—O—SO), phosphonic acid (—P(═O)(OH)), phosphoric acid (—O—P(═O)(OH)) moiety, or a deprotonated form thereof,'}{'sup': '1', 'Ris alkyl, aryl, alkylaryl, or arylalkyl'}{'sup': '2', 'Ris alkyl, aryl, alkylaryl, or arylalkyl,'}{'sup': '3', 'Ris alkyl, aryl, alkylaryl, or arylalkyl,'}{'sup': '4', 'Ris alkyl, aryl, alkylaryl, or arylalkyl,'}{'sup': '5', 'Ris H, alkyl, aryl, alkylaryl, or arylalkyl,'}{'sup': '6', 'Ris alkyl, aryl, alkylaryl, or arylalkyl,'}{'sup': '7', 'Ris H, alkyl, aryl, alkylaryl, or arylalkyl, and'}(C) an aqueous medium.2. The CMP composition of claim 1 , ...

ABRASIVE PARTICLES HAVING PARTICULAR SHAPES AND METHODS OF FORMING SUCH PARTICLES

A shaped abrasive particle including a body having a length (l), a width (w), and a height (hi), wherein the height is at least about 28% of the width, and a percent flashing (f) of at least about 10% and not greater than about 45% for a total side area of the body. 1. A shaped abrasive particle comprising: a length (l), a width (w), and a height (hi), wherein the height (hi) is an interior height of the body and at least about 28% of the width; and', 'a percent flashing (f) of at least about 10% and not greater than about 45% for a total side area of the body., 'a body including2. (canceled)3. (canceled)4. The shaped abrasive particle of claim 1 , wherein the height (hi) is at least about 29% of the width.5. The shaped abrasive particle of claim 1 , wherein the height (hi) is at least about 33% of the width.6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. (canceled)12. (canceled)13. The shaped abrasive particle of claim 1 , wherein the percent flashing is at least about 12%.14. The shaped abrasive particle of claim 1 , wherein the percent flashing is and not greater than about 36%.15. (canceled)16. (canceled)17. (canceled)18. (canceled)19. (canceled)20. (canceled)21. (canceled)22. (canceled)23. (canceled)24. (canceled)25. (canceled)26. (canceled)27. The shaped abrasive particle of claim 1 , wherein the body comprises a shape selected from the group consisting of triangular claim 1 , quadrilateral claim 1 , rectangular claim 1 , trapezoidal claim 1 , pentagonal claim 1 , hexagonal claim 1 , heptagonal claim 1 , octagonal claim 1 , and a combination thereof.28. (canceled)29. (canceled)30. (canceled)31. The shaped abrasive particle of claim 1 , wherein the body comprises a bottom surface claim 1 , an upper surface claim 1 , a first side surface extending between the bottom surface and the upper surface claim 1 , and a second side surface extending between the bottom surface and the upper surface claim 1 , and wherein the first side surface and ...

CHEMICAL MECHANICAL POLISHING SLURRY

A chemical mechanical polishing (CMP) slurry used for phase change memory, characterized by comprising polishing particles, oxidizing agents, chelating agents, inhibiting agents, surface active agents, pH adjusting agents/buffering agents and aqueous medium. Compared with the prior art, the present invention provides a chemical mechanical polishing slurry, by which the controllable selectivity of phase change material/bottom dielectric material (1:1 to 180:1) can be achieved and the phase change properties of phase change materials can be maintained after polishing with the polished surface smooth and free from scratch, meeting process requirements of phase change memory. 1. A chemical mechanical polishing slurry used for phase change memory , characterized by comprising polishing particles , oxidizing agents , chelating agents , inhibiting agents , surface active agents , pH adjusting agents/buffering agents and aqueous medium.2. The chemical mechanical polishing slurry according to claim 1 , characterized in that claim 1 , based on the total weight of chemical mechanical polishing slurry claim 1 , the content of said polishing particles is 0.1 wt % to 30 wt % claim 1 , the content of said oxidizing agents is 0.01 wt % to 10 wt % claim 1 , the content of said chelating agents is 0.01 wt % to 5 wt % claim 1 , the content of said inhibiting agents is 0.0001 wt % to 5 wt % claim 1 , and the content of said surface active agents is 0.001 wt % to 2 wt %.3. The chemical mechanical polishing slurry according to claim 2 , characterized in that the content of said polishing particles is 0.5 wt % to 5 wt % claim 2 , the content of said oxidizing agents is 0.1 wt % to 5 wt % claim 2 , the content of said chelating agents is 0.05 wt % to 2 wt % claim 2 , the content of said inhibiting agents is 0.001 wt % to 1 wt % claim 2 , and the content of said surface active agents is 0.001 wt % to 1 wt %.4. The chemical mechanical polishing slurry according to claim 1 , characterized in ...

CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE

A chemical mechanical polishing aqueous dispersion of the invention includes (A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000 and including a heterocyclic ring in its molecule, (B) a second water-soluble polymer or its salt having a weight average molecular weight of 1000 to 10,000 and including one group selected from a carboxyl group and a sulfonic group, (C) an oxidizing agent, and (D) abrasive grains, and has a pH of 7 to 12. 18-. (canceled)9. A chemical mechanical polishing aqueous dispersion comprising:(A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000, a molecule of the first water-soluble polymer comprising a heterocyclic ring;(B) a second water-soluble polymer or a salt of the second water-soluble polymer having a weight average molecular weight of 1000 to 10,000 and comprising one group selected from a carboxyl group and a sulfonic group;(C) an oxidizing agent; and(D) abrasive grains,the chemical mechanical polishing aqueous dispersion having a pH of 7 to 12.10. The chemical mechanical polishing aqueous dispersion as defined in claim 9 ,wherein a mass ratio (A)/(B) of the first water-soluble polymer (A) and the second water-soluble polymer (B) is 0.02 to 50.11. The chemical mechanical polishing aqueous dispersion as defined in claim 9 ,wherein a 5 mass % aqueous solution of the first water-soluble polymer (A) has a viscosity of 50 to 150 mPa·s.12. The chemical mechanical polishing aqueous dispersion as defined in claim 9 ,wherein a 5 mass % aqueous solution of the second water-soluble polymer (B) has a viscosity of 1 to 5 mPa·s.13. The chemical mechanical polishing aqueous dispersion as defined in claim 9 ,wherein the first water-soluble polymer (A) is a copolymer having at least one structural unit derived from a compound selected from vinylpyridine, vinylpyrrolidone, and vinylimidazole.14. The chemical mechanical polishing aqueous dispersion as defined in ...

CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A NON-IONIC SURFACTANT AND A CARBONATE SALT

A chemical mechanical polishing (CMP) composition (Q) comprising 1. A chemical mechanical polishing (CMP) composition , comprising:inorganic particles, organic particles, or a mixture or composite thereof, wherein the particles are cocoon-shaped;a non-ionic surfactant;a carbonate or hydrogen carbonate salt;an alcohol; andan aqueous medium.2. The CMP composition according to claim 1 ,wherein the alcohol is an alcohol having at least two hydroxyl groups which are not dissociable in the aqueous medium.3. The CMP composition according to claim 1 , further comprising:an oxidizing agent.4. The CMP composition according to claim 1 , further comprising:a corrosion inhibitor.5. The CMP composition according to claim 1 , further comprising:a chelating agent.6. The CMP composition according to claim 1 ,wherein the particles are cocoon-shaped silica particles.7. The CMP composition according to claim 1 ,wherein the non-ionic surfactant is an amphiphilic non-ionic surfactant comprising a polyoxyalkylene group.8. The CMP composition according to claim 1 ,wherein the carbonate salt is an alkali carbonate or an alkali hydrogen carbonate.9. The CMP composition according to claim 1 , further comprising:an inorganic or organic acid as chelating agent.10. The CMP composition according to claim 1 , wherein a pH value of the CMP composition is of from 8 to 12.11. The CMP composition according to claim 1 , comprises:cocoon-shaped silica particles;an amphiphilic non-ionic surfactant comprising a polyoxyalkylene group;an alkali carbonate or an alkali hydrogen carbonate;an alcohol having at least two hydroxyl groups which are not dissociable in an aqueous medium;an oxidizing agent;a corrosion inhibitor;a chelating agent; andan aqueous medium.12. A process for manufacturing a semiconductor device claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'chemical mechanical polishing a substrate used in the semiconductor industry in presence of the CMP composition according to ...

CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A NON-IONIC SURFACTANT AND AN AROMATIC COMPOUND COMPRISING AT LEAST ONE ACID GROUP

A chemical mechanical polishing (CMP) composition (Q) comprising 1. A chemical mechanical polishing (CMP) composition , comprising:inorganic particles, organic particles, or a mixture or composite thereof,a non-ionic surfactant,an aromatic compound comprising at least one acid group (Y), or a salt thereof, andan aqueous medium,wherein particles are cocoon-shaped.2. The CMP composition according to claim 1 , wherein the aromatic compoundcomprises per aromatic ring at least two acid groups, orcomprises per aromatic ring at least one acid group and at least one further functional group different from the at least one acid group.3. The CMP composition according to claim 1 , wherein the aromatic compound comprises a benzene ring and claim 1 , per benzene ring claim 1 , at least one carboxylic acid group or a deprotonated form thereof.4. The CMP composition according to claim 1 , wherein the aromatic compound is a benzenecarboxylic acid comprising at least two carboxylic acid groups claim 1 , or salts thereof.5. The CMP composition according to claim 1 , wherein the CMP composition further comprises an oxidizing agent.6. The CMP composition according to claim 1 , wherein the CMP composition further comprises an alcohol.7. The CMP composition according to claim 1 , wherein the CMP composition further comprises a corrosion inhibitor.8. The CMP composition according to claim 1 , wherein the particles are silica particles.9. The CMP composition according to claim 1 , wherein the non-ionic surfactant is an amphiphilic non-ionic surfactant comprising a polyoxyalkylene group.10. The CMP composition according to claim 1 , wherein a pH value of the composition is from 8 to 12.11. The CMP composition according to claim 1 , wherein the CMP composition comprisescocoon-shaped silica particles,an amphiphilic non-ionic surfactant containing a polyoxyalkylene group,a benzenecarboxylic acid comprising at least two carboxylic groups (—COOH), or a salt thereof,an alcohol having at least two ...

High Purity Silica Sol and its Production Method

A method for producing a high purity silica sol is provided. This method has enabled use of water glass for the starting material, and the resulting silica sol has a reduced metal impurity Cu and Ni content compared to conventional methods. The method comprises (1) ultrafiltration of an aqueous solution of an alkali silicate; (2) ion exchange process for removal of at least a part of cationic components in the purified aqueous solution of an alkali silicate; (3) another ion exchange process using a chelating ion exchange resin to obtain high purity silicate solution; and (4) adjustment of a part of the high purity silicate solution (seed solution) to alkaline pH and mixing of this solution with another part of the solution (feed solution) to produce a high purity silica sol having a Cu concentration and a Ni concentration (in relation to the dry silica) of up to 50 ppb. 1. A method for producing a high purity silica sol comprising the steps of(1) conducting ultrafiltration of an aqueous solution of an alkali silicate (a) to obtain purified aqueous solution of the alkali silicate (b);(2) subjecting the purified aqueous solution of the alkali silicate (b) to an ion exchange process to remove at least a part of cationic components in the purified aqueous solution of the alkali silicate (b) to obtain purified silicate solution;(3) subjecting the purified silicate solution to an ion exchange process using a chelating ion exchange resin to obtain high purity silicate solution; and(4) adjusting a part of the high purity silicate solution (seed solution) to alkaline pH and mixing this solution with another part of the high purity silicate solution (feed solution) to produce the high purity silica sol having a Cu concentration and a Ni concentration (in relation to the dry silica) of up to 50 ppb.2. A method for producing a high purity silica sol according to further comprising the step of adding an oxidizing agent to at least one member selected from the group consisting of ...

ETCHING LIQUID COMPOSITION FOR MULTILAYER CONTAINING COPPER AND MOLYBDENUM AND PROCESS FOR ETCHING THEREOF

There is provided an etching liquid composition for a multilayer film containing copper and molybdenum. The etching liquid composition comprises: (A) a peroxosulfate ion source; (B) a copper ion source; and (C) at least one nitrogen compound source selected from the group consisting of ammonia, ammonium ions, amines, and alkyl ammonium ions and has pH 3.5 to 9. 1. An etching liquid composition for a multilayer film containing copper and molybdenum , the liquid composition comprising:(A) a peroxosulfate ion source;(B) a copper ion source; and(C) at least one nitrogen compound source selected from the group consisting of ammonia, ammonium ions, amines, and alkyl ammonium ions,the liquid composition having pH 3.5 to 9.2. The liquid composition according to claim 1 , wherein the peroxosulfate ion source (A) is at least one compound selected from the group consisting of ammonium peroxodisulfate claim 1 , potassium peroxodisulfate claim 1 , sodium peroxodisulfate claim 1 , and potassium hydrogen peroxomonosulfate.3. The liquid composition according to claim 1 , wherein the mixing ratio of the peroxosulfate ion source (A) to the copper ion source (B) is 0.01 to 20 on a molar basis.4. The liquid composition according to claim 1 , wherein the copper ion source (B) is at least one compound selected from the group consisting of copper claim 1 , copper sulfate claim 1 , copper nitrate claim 1 , and copper acetate.5. The liquid composition according to claim 1 , wherein the nitrogen compound source (C) is at least one compound selected from the group consisting of ammonia claim 1 , ammonium sulfate claim 1 , ammonium nitrate claim 1 , ammonium acetate claim 1 , ammonium peroxodisulfate claim 1 , and tetramethylammonium hydroxide.6. The liquid composition according to claim 1 , wherein the mixing ratio of the nitrogen compound source (C) to the copper ion source (B) is 4 to 100 on a molar basis.7. The liquid composition according to claim 1 , which further comprises (D) a ...

SURFACE CLEANING ARTICLE AND PROCESS FOR MAKING THE SAME

An inventive composition that has utility as an article for cleaning a target surface is provided. Embodiments of the inventive composition are readily applied to a substrate to form a cleaning article or form a free-standing article; the composition upon drying forms a matrix having a coefficient of friction of greater than one, and a glass transition temperature that is between 0° C. and 40° C. The matrix is amenable to loading with various additives illustratively including re-enforcing fibers, abrasives, plasticizers, foaming agents, fragrances, and combinations thereof. Embodiments of the inventive composition operate to clean a substrate such as a vehicle and ideally return the same to the original look and feel without requiring excessive work, or requiring the removal of too much material from the surface. 1. A surface polishing article comprising: a thermoplastic polymer with a glass transition temperature that is between 0° C. and 40° C.2. The article of further comprising an abrasive having an abrasive average particle size of less than 25 microns.3. The article of claim 2 , wherein the abrasive average particle size is less than 10 microns.4. The article of where said abrasive has an abrasive volume greater than a volume of said polymer.5. (canceled)6. (canceled)7. The article of further comprising a substrate to which said polymer is adhered.8. The article of where said substrate is chosen from one of: a towel claim 7 , a sponge claim 7 , or a foam pad.9. (canceled)10. An article for cleaning a target surface comprising: a substrate deformable to a contour of the surface claim 7 , a coating on said substrate claim 7 , said coating having an exposed face claim 7 , said coating comprising: a matrix formed of a thermoplastic elastomer with coefficient of friction of greater than one claim 7 , and a glass transition temperature that is between 0° C. and 40° C.11. The article of wherein said substrate is an open-celled or close-celled foam.12. (canceled)13. ...

POLISHING COMPOSITION AND POLISHING METHOD USING THE SAME

Provided is a polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition including a pH buffer, a polishing accelerator, a water-soluble polymer, and a block-type compound. By polishing a silicon wafer by using the polishing composition, a polishing speed of greater than 0.1 μm/min can be achieved. 1. A polishing composition that does not contain abrasives and that is used for polishing a silicon wafer , the polishing composition comprising:a polishing accelerator including an amine compound or an inorganic alkaline compound;a water-soluble polymer; anda block-type compound in which an oxyethylene group and an oxypropylene group are included in a block-type polyether.2. The polishing composition according to claim 1 , further comprising:a pH buffer including a carbonate and a hydrogencarbonate.3. A polishing method for polishing a silicon wafer using the polishing composition according to . The present invention relates to a polishing composition for polishing a silicon wafer, and a polishing method using the same.Conventionally, multi-stage polishing has been performed generally in the polishing of a silicon wafer. More specifically, the following multi-stage polishing has been performed: a silicon wafer is flattened in the primary polishing, and the surface of the silicon wafer is finished more finely in the secondary polishing and subsequent stages.In the primary polishing, a high polishing rate is required and flatness of a silicon wafer is demanded. The conventional polishing composition for the primary polishing contains abrasives in order to improve the polishing rate. As the abrasives, nanometer-order colloidal particles or the like are used.In recent years, as the required accuracy regarding wafer quality increases, the prevention and countermeasure to scratches and LPDs (light point defects) come to be needed in the primary polishing as well.The mechanical polishing with a polishing ...

CMP POLISHING FLUID, METHOD FOR MANUFACTURING SAME, METHOD FOR MANUFACTURING COMPOSITE PARTICLE, AND METHOD FOR POLISHING BASE MATERIAL

A CMP polishing liquid comprises water and an abrasive particle, wherein the abrasive particle comprises a composite particle having a core including a first particle, and a second particle provided on the core, the first particle contains silica, the second particle contains cerium hydroxide, and the pH of the CMP polishing liquid is equal to or lower than 9.5. 1. A CMP polishing liquid comprising:water; andan abrasive particle, whereinthe abrasive particle comprises a composite particle having a core including a first particle, and a second particle provided on the core,the first particle contains silica,the second particle contains cerium hydroxide, andpH of the CMP polishing liquid is equal to or lower than 9.5.2. The CMP polishing liquid according to used for polishing a surface to be polished that contains silicon oxide.3. A method for polishing a base material claim 1 , comprising a step of polishing a surface to be polished of a base material by using the CMP polishing liquid according to .4. A method for manufacturing a CMP polishing liquid containing water and an abrasive particle claim 1 , the method comprisinga step of, in an aqueous solution that contains a first particle containing silica, a first component containing a precursor of cerium hydroxide, and a second component that is capable of reacting with the precursor to precipitate a second particle containing cerium hydroxide, precipitating the second particle by reacting the precursor and the second component to obtain a composite particle having a core including the first particle, and the second particle provided on the core, whereinthe abrasive particle comprises the composite particle, and pH of the CMP polishing liquid is equal to or lower than 9.5.5. The method for manufacturing a CMP polishing liquid according to claim 4 , wherein the composite particle is obtained by mixing a liquid containing the first particle and the first component with a liquid containing the second component.6. The ...

Abrasive and polishing composition

Provided is a polishing composition containing an abrasive and water. The abrasive content in the polishing composition is no less than 0.1% by mass. The abrasive contains zirconium oxide particles. The zirconium oxide particles have a specific surface area of from 1 to 15 m 2 /g. The zirconium oxide particles preferably have a purity of no less than 99% by mass. The polishing composition is used in, for example, polishing a hard and brittle material, such as sapphire, silicon nitride, silicon carbide, silicon oxide, glass, gallium nitride, gallium arsenide, indium arsenide, and indium phosphide.

Methods of polishing sapphire surfaces

Described herein are methods for polishing sapphire surfaces using compositions comprising colloidal silica, wherein the colloidal silica has a broad particle size distribution.

COMPOSITIONS COMPRISING A FLUOROSURFACTANT AND A FLUORO-FREE HYDROTROPE

Compositions comprising a fluorosurtactant and a fluoro-free hydrotrope are disclosed. The fluoro-free hydrotropes are cationic aromatic compounds, anionic aromatic compounds, or water soluble azo derivatives. 1. A composition comprising a fluorosurfactant and a fluoro-free hydrotrope , wherein the weight ratio of the fluorosurfactant to the fluoro-free hydrotrope is in the range of 1:10 to 10:1.2. The composition of claim 1 , wherein the concentration of the fluorosurfactant is 0.00005-2 wt %.4. The composition of claim 1 , wherein the fluorosurfactant is an anionic claim 1 , a cationic claim 1 , an amphoteric claim 1 , or a nonionic fluorosurfactant.5. A method of altering the surface behavior of an agent claim 1 , comprising adding to the agent a composition comprising a fluorosurfactant and a fluoro-free hydrotrope claim 1 , wherein the weight ratio of the fluorosurfactant to the fluoro-free hydrotrope is in the range of 1:10 to 10:1.6. The composition of claim 5 , wherein the concentration of the fluorosurfactant is 0.00005-2 wt %.8. The method of claim 5 , wherein the fluorosurfactant is an anionic claim 5 , a cationic claim 5 , an amphoteric claim 5 , or a nonionic fluorosurfactant.9. The method of claim 5 , wherein the agent is selected from the group consisting of coating compositions claim 5 , lattices claim 5 , polymers claim 5 , floor finishes claim 5 , inks claim 5 , emulsifying agents claim 5 , foaming agents claim 5 , release agents claim 5 , repellency agents claim 5 , flow modifiers claim 5 , film evaporation inhibitors claim 5 , wetting agents claim 5 , leveling agents claim 5 , penetrating agents claim 5 , cleaners claim 5 , grinding agents claim 5 , electroplating agents claim 5 , corrosion inhibitors claim 5 , etchant solutions claim 5 , soldering agents claim 5 , dispersion aids claim 5 , antimicrobial agents claim 5 , pulping aids claim 5 , rinsing aids claim 5 , polishing agents claim 5 , personal care compositions claim 5 , drying agents ...

METHOD OF ETCHING A HIGH ASPECT RATIO CONTACT

Methods and an etch gas composition for etching a contact opening in a dielectric layer are provided. Embodiments of the method use a plasma generated from an etch gas composed of CFand/or CF, an oxygen source, and a carrier gas in combination with tetrafluoroethane (CF) or a halofluorocarbon analogue of CF. 1. An etch gas for etching a dielectric material , the etch gas comprising at least one of CFand CF , an oxygen source , an inert gas , and CF.2. The etch gas of claim 1 , further comprising an additional fluorocarbon gas having the general formula CFwhere x=1-6 and y=2-8.3. The etch gas of claim 1 , further comprising a hydrofluorocarbon gas having the general formula CHFwhere x=1-6 claim 1 , y=1-6 and z=1-6 claim 1 , or a mixture thereof.4. An etch gas for plasma etching a dielectric material claim 1 , the etch gas comprising at least one of CFand CF claim 1 , an oxygen source claim 1 , an inert gas claim 1 , and a halofluorocarbon selected from the group consisting of CFBr claim 1 , CFIand CFI.5. The etch gas of claim 1 , consisting essentially of the at least one of CFand CF claim 1 , oxygen source claim 1 , inert gas claim 1 , and CF.6. The etch gas of claim 4 , further comprising at least one of an additional fluorocarbon gas having the general formula CFwhere x=1-6 and y=2-8 claim 4 , and a hydrofluorocarbon gas having the general formula CHFwhere x=1-6 claim 4 , y=1-6 and z=1-6.7. The etch gas of claim 1 , wherein the oxygen source comprises oxygen (O) claim 1 , carbon monoxide (CO) claim 1 , or mixtures thereof.8. The etch gas of claim 1 , wherein the inert gas comprises argon (Ar) claim 1 , xenon (Xe) claim 1 , neon (Ne) claim 1 , krypton (Kr) claim 1 , or helium (He).9. The etch gas of claim 1 , further comprising a stabilizing agent.10. The etch gas of claim 1 , wherein a ratio of CF:CFis from about 0.25:1 to 1.5:1.11. The etch gas of claim 1 , wherein a ratio of CF:CFis from about 0.25:1 to 1.5:1.12. An etch gas consisting of at least one of CFand ...

SINGLE CRYSTAL CBN FEATURING MICRO-FRACTURING DURING GRINDING

A superabrasive material and method of making the superabrasive material are provided. The superabrasive material may comprise a superabrasive crystal having an irregular surface. The superabrasive material further comprises a plurality of structure defects within the superabrasive crystal. The plurality of structure defects may cause micro-chipping when used as grinding materials. 1. A superabrasive material comprising:a single superabrasive crystal having an irregular surface; anda plurality of structure defects within the superabrasive crystal, wherein the plurality of structure defects cause micro-chipping when used as grinding materials.2. The superabrasive material of claim 1 , wherein the superabrasive crystal is selected from a group of cubic boron nitride claim 1 , diamond claim 1 , and diamond composite materials.3. The superabrasive material of claim 1 , wherein the plurality of structure defects include micro cracks claim 1 , crystal dislocations claim 1 , or flaws.4. The superabrasive material of claim 1 , wherein the plurality of structure defects cause micro-chipping claim 1 , micro-fracture when the superabrasive materials are used for grinding materials.5. The superabrasive material of claim 1 , wherein the superabrasive material has toughness index from about 53 to about 62.6. The superabrasive material of claim 1 , wherein the superabrasive material has ellipse ratio about 1.25 to about 1.35.7. The superabrasive material of claim 1 , wherein the superabrasive material has more than 50% layered or laminar structure of single superabrasive crystal.8. The superabrasive material of claim 7 , wherein the layered or laminar microstructure aligned substantially parallel to the irregular surface to enable wear or breaking off of layer or laminar microstructure following a layer or laminar structure pattern9. The superabrasive material of claim 8 , wherein the superabrasive material has dpost-crushing particle size distribution less than 65% of dpre- ...

COPPER OXIDE ETCHANT AND ETCHING METHOD USING THE SAME

In order to provide a copper oxide etchant and an etching method using the same capable of selectively etching exposure/non-exposure portions when laser light exposure is performed by using copper oxide as a thermal-reactive resist material, the copper oxide etchant for selectively etching copper oxides having different oxidation numbers in a copper oxide-containing layer containing the copper oxide as a main component contains at least a chelating agent or salts thereof. 1. A method of etching a copper oxide-containing layer containing copper oxide (II) in an amount of 50 mass % or higher , comprising the steps of:thermally decomposing the copper oxide (II) to copper oxide (I) in a predetermined area of the copper oxide-containing layer so that the copper oxide (I) is present in the predetermined area; andselectively dissolving the copper oxide (I) in the predetermined area with an etchant containing at least a chelating agent.2. The method according to claim 1 , wherein the thermal decomposing is performed by exposure.3. The method according to claim 2 , wherein the exposure is laser exposure.4. The method according to claim 1 , wherein the chelating agent comprises;at least one amino acid selected from the group consisting of alanine, arginine, asparagine, aspartic acid, cysteine, glutamine, glutamic acid, glycine, histidine, isoleucine, leucine, lysine, methionine, ornithine, phenylalanine, serine, threonine, tryptophan, tyrosine, valine, and proline,and/orat least one acid selected from the group consisting of oxalic acid, ethylenediaminetetraacetic acid, hydroxyethylethylenediaminetriacetic acid, dihydroxyethylethylenediaminediacetic acid, 1,3-propanediaminetetraacetic acid, citric acid, fumaric acid, adipic acid, succinic acid, malic acid, tartaric acid, and bathocuproinesulfonic acid or at least one salt thereof.5. The method according to claim 4 , wherein the chelating agent contains at least one amino acid.6. The method according to claim 4 , wherein the ...

POLISHING AGENT AND POLISHING METHOD

A polishing agent for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate with a high polishing rate to obtain a smooth surface is provided. This polishing agent comprises an oxidant having redox potential of 0.5 V or more and containing a transition metal, silicon oxide particles, cerium oxide particles and a dispersion medium, in which a mass ratio of the silicon oxide particles to the cerium oxide particles is from 0.2 to 20. 1. A polishing agent for chemically and mechanically polishing a non-oxide single-crystal substrate , the polishing agent comprising:an oxidant having redox potential of 0.5 V or more and containing a transition metal;silicon oxide particles and cerium oxide particles; anda dispersion medium,wherein a mass ratio of the silicon oxide particles to the cerium oxide particles is from 0.2 to 20.2. The polishing agent according to claim 1 ,wherein the oxidant is permanganate ion.3. The polishing agent according to claim 2 ,wherein a content of permanganate ion is 0.015 mass % or more and 5 mass % or less.4. The polishing agent according to claim 1 ,wherein a content of the cerium oxide particles is 0.05 mass % or more and 15 mass % or less.5. The polishing agent according to claim 1 ,wherein an average secondary particle diameter of the cerium oxide particles is 0.5 μm or less.6. The polishing agent according to claim 1 ,wherein an average secondary particle diameter of the silicon oxide particles is 0.5 μm or less.7. The polishing agent according to claim 1 ,wherein the silicon oxide particle is colloidal silica.8. The polishing agent according to claim 1 ,wherein pH is 11 or less.9. The polishing agent according to claim 8 ,wherein pH is 5 or less.10. The polishing agent according to claim 1 ,wherein the non-oxide single-crystal substrate is a silicon carbide (SiC) single-crystal substrate or a gallium nitride (GaN) single-crystal substrate.11. A polishing method comprising:{'claim-ref': {'@idref': ' ...

Polishing composition and method for producing polished article

This invention provides a polishing composition comprising an abrasive, a water-soluble polymer and water. The water-soluble polymer comprises a polymer A having an adsorption ratio of lower than 5% and a polymer B having an adsorption ratio of 5% or higher, but lower than 95% based on a prescribed adsorption ratio measurement. Herein, the polymer B is selected from polymers excluding hydroxyethyl celluloses.

POLISHING COMPOSITION

Provided is a polishing composition which can polish a sapphire substrate having a non-polar plane or a semi-polar plane at a high polishing rate. 1. A polishing composition used in an application to polish a sapphire substrate having a non-polar plane or a semi-polar plane , the polishing composition comprising:colloidal silica particles and water,{'sup': '2', 'wherein a value obtained by dividing a specific surface area (unit: m/g) of the colloidal silica particles by a number average particle diameter (unit: nm) of the colloidal silica particles, that is, (specific surface area/number average particle diameter) is 0.5 or more and 3.0 or less.'}2. The polishing composition according to claim 1 , wherein the value obtained by dividing a specific surface area (unit: m/g) of the colloidal silica particles by a number average particle diameter (unit: nm) of the colloidal silica particles claim 1 , that is claim 1 , (specific surface area/number average particle diameter) is 0.5 or more and 2.0 or less.3. The polishing composition according to claim 1 , wherein claim 1 , when a particle size at a 3% accumulation point from smaller particle size is denoted as Dand a particle size at a 97% accumulation point from smaller particle size is denoted as Din a cumulative number distribution of the colloidal silica particles claim 1 , a value obtained by dividing Dby D claim 1 , that is claim 1 , (D/D) is 2.0 or more.4. The polishing composition according to claim 1 , wherein an aspect ratio of the colloidal silica particles is 1.10 or more.5. The polishing composition according to claim 1 , wherein a pH value is 5 or more and 11 or less.6. A polishing method of polishing a sapphire substrate having a non-polar plane or a semi-polar plane by using the polishing composition according to .7. A method for manufacturing a sapphire substrate claim 6 , the method comprising a step of performing polishing by the polishing method according to . The present invention relates to a ...

HIGH-PURITY 1H-HEPTAFLUOROCYCLOPENTENE

The present invention is a 1H-Heptafluorocyclopentene having a purity of 999 wt % or more and an organochlorine-based compound content of 350 ppm by weight or less. The present invention provides a high-purity 1H-Heptafluorocyclopentene that may be useful as a plasma reaction gas for semiconductors. 1. 1H-Heptafluorocyclopentene haying a purity of 99.9 wt % or more and an organochlorine-based compound content of 350 ppm by weight or less.2. The 1H-heptafluorocyclopentene according to claim 1 , the 1H-heptafluorocyclopentene being obtained by performing a step (I) that hydrogenates 1-chloroheptafluorocyclopentene through a gas phase reaction in the presence of a catalyst to obtain crude 1H-heptafluorocyclopentene claim 1 , and a step (II) that purifies the crude 1H-heptafluorocyclopentene obtained by the step (I) using a rectifying column that has a number of theoretical plates of 50 or more.3. The 1H-heptafluorocyclopentene according to claim 1 , wherein the organochlorine-based compound is either or both of chlorononafluorocyclopentane and chloroheptafluorocyclopentene.4. The 1H-heptafluorocyclopentene according to claim 1 , the 1H-heptafluorocyclopentene having a nitrogen content of 100 ppm by volume or less and an oxygen content of 50 ppm by volume or less.5. The 1H-heptafluorocyclopentene according to claim 3 , the 1H-heptafluorocyclopentene having a water content of 20 ppm by weight or less.6. A method for using the 1H-heptafluorocyclopentene according to as a dry etching gas.7. A method for using claim 1 , the 1H-heptafluorocyclopentene according to as a plasma CVD reactive gas.8. A container equipped with a valve that is filled with the 1H-heptafluorocyclopentene according to . The present invention relates to high-purity 1H-heptafluorocyclopentene that may be useful as a plasma reaction gas (e.g., dry etching gas or CVD gas), a fluorine-containing medicine intermediate, a hydrofluorocarbon-based solvent, and the like.In recent years, semiconductor production ...

ABRASIVE PARTICLES, POLISHING SLURRY AND METHOD OF FABRICATING ABRASIVE PARTICLES

The present disclosure relates to abrasive particles, a polishing slurry and a fabricating method of the abrasive particles. The fabricating method of abrasive particles in accordance with an exemplary embodiment of the present disclosure includes preparing a precursor solution in which a first precursor is mixed with a second precursor that is different from the first precursor, preparing a basic solution, mixing the basic solution with the precursor solution and_forming a precipitate, and washing abrasive particles synthesized by precipitation. 1. A method of fabricating abrasive particles , the method comprising:preparing a precursor solution in which a first precursor is mixed with a second precursor that is different from the first precursor;preparing a basic solution;mixing the basic solution with the precursor solution and forming a precipitate; andwashing abrasive particles synthesized by precipitation.2. The method of claim 1 , wherein the first precursor comprises an organic salt containing a cerium (III) claim 1 , and the second precursor comprises an inorganic salt containing the cerium (III).3. The method of claim 2 , wherein the second precursor comprises a halogen group element.4. The method of claim 1 , wherein preparing the precursor solution comprises:mixing the first precursor with water to prepare a first precursor solution;mixing the second precursor with water to prepare a second precursor solution; andmixing the first precursor solution with the second precursor solution.5. The method of claim 4 , wherein the first precursor solution is a solution having a pH value lower than that of the second precursor solution.6. The method of claim 4 , wherein preparing the precursor solution further comprises adding an acidic material to the second precursor solution prior to mixing the first precursor solution with the second precursor solution.7. The method of claim 4 , wherein mixing the first precursor solution with the second precursor solution ...

METHODS AND PRODUCT FOR FORMING LINES UTILIZING LIQUID ACRYLIC COPOLYMER SOLUTION

A liquid water-based solution for application of temporary floor markings on a polyurethane coated floor and a method of applying the same is disclosed. According to one aspect, the solution comprises 5-15% by weight of an acrylic copolymer, 1%-2% propylene glycol, 0.5%-2% dipropylene glycol mono-methyl-ether, 2-8% of titanium dioxide; and 1-5% of ethelyne glycol. The solution is dispensable through a foam applicator so that it can be used to form temporary lines for recreational and athletic activities. The solution has a drying time when applied to the polyurethane floor of under five minutes and can remains water soluble for an extended period of time so that it can be removed without damaging the underlying surface. 1. A liquid water-based solution for application of temporary floor markings on a polyurethane coated floor , the solution comprising5-15% by weight of an acrylic copolymer,1%-2% propylene glycol,0.5%-2% dipropylene glycol mono-methyl-ether,2-8% of titanium dioxide; and1-5% of ethelyne glycol,wherein the solution is dispensable through a foam applicator, andwherein the solution has a drying time when applied to the polyurethane floor of under five minutes.2. The liquid water based solution of wherein the solution further comprises 1-5% of gum Arabic.3. The liquid water based solution of wherein the solution further comprises 1-2% of a leveling agent.4. A method of forming lines on a polyurethane coated wood surface claim 1 , the method comprising:determining a line marking plan based on a desired activity,applying a liquid water-based solution containing an acrylic copoloymer resin to the surface based on the determined line plan, wherein the water-based solution comprises 5-15% by weight of an acrylic copolymer, 1%-2% propylene glycol, 0.5%-2% dipropylene glycol mono-methyl-ether, 2-8% of titanium dioxide; and 1-5% of ethelyne glycol; andwaiting a prescribed drying time prior to commencing the activity, wherein the prescribed drying time is less ...

Low Oxide Trench Dishing Chemical Mechanical Polishing

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(−)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.

Polishing compositions for reduced defectivity and methods of using the same

Chemical mechanical polishing compositions include an abrasive, a first removal rate enhancer; and water; wherein the polishing compositions have a value of less than 800,000 for the relation: large particle counts/weight percent abrasive, when measured using a 0.2 μm bin size.

WATER-SOLUBLE FLUX AND COPPER MATERIAL PICKLING METHOD

The present invention belongs to the technical field of solder fluxes, and in particular relates to a water-soluble flux and a copper material pickling method. The water-soluble flux provided by the present invention includes an organic acid, an alcohol ether solvent, and deionized water. The organic acid is used as an active component of the present invention, and under the action of the alcohol ether solvent, oxides and impurities on the surface of a part to be welded can be sufficiently removed, and adhering residue of an acidic substance on the surface of the part to be welded can be reduced. In the process of tin plating of the part to be welded treated by the water-soluble flux provided by the present invention, the splash of tin liquid can be effectively inhibited, and the utilization rate of tin is improved. 1. A water-soluble flux , comprising the following components: an organic acid , an alcohol ether solvent , and deionized water.2. The water-soluble flux according to claim 1 , comprising the following components by mass parts claim 1 , 10-20 parts of the organic acid claim 1 , 1-10 parts of the alcohol ether solvent and 70-90 parts of the deionized water.3. The water-soluble flux according to claim 1 , wherein the organic acid comprises formic acid and/or acetic acid.4. The water-soluble flux according to claim 1 , wherein the alcohol ether solvent comprises one or more of ethylene glycol monobutyl ether claim 1 , dipropylene glycol methyl ether claim 1 , diethylene glycol monoethyl ether claim 1 , and tripropylene glycol monomethyl ether.5. The water-soluble flux according to claim 4 , wherein the alcohol ether solvent is ethylene glycol monobutyl ether and tripropylene glycol monomethyl ether.6. The water-soluble flux according to claim 5 , wherein the ratio of the mass of the ethylene glycol monobutyl ether to the mass of the tripropylene glycol monomethyl ether is (3-5):1.7. A copper material pickling method claim 5 , comprising:{'claim-ref': {'@ ...

ETCHING OF WATER-SENSITIVE OPTICS WITH WATER-IN-OIL EMULSIONS

In one inventive concept, a method for etching an optic includes obtaining a microemulsion, where the microemulsion includes a continuous oil phase, a surfactant system comprising at least one surfactant, and water, submerging at least a portion of the optic in the microemulsion, and agitating by ultrasonication the microemulsion for etching the optic submerged therein. 1. A method for etching an optic , the method comprising:obtaining a microemulsion, wherein the microemulsion comprises a continuous oil phase, a surfactant system comprising at least one surfactant, and water;submerging at least a portion of the optic in the microemulsion; andagitating by ultrasonication the microemulsion for etching the optic submerged therein.2. The method as recited in claim 1 , wherein the microemulsion comprises an effective amount of the surfactant system to disperse the water in the continuous oil phase.3. The method as recited in claim 1 , wherein the microemulsion is a water-in-oil emulsion.4. The method as recited in claim 1 , wherein the continuous oil phase is present in the microemulsion in a range of about 60 wt % to about 90 wt % relative to a total weight of the microemulsion.5. The method as recited in claim 1 , wherein the continuous oil phase is present in the microemulsion in a range of about 70 wt % to about 85 wt % relative to a total weight of the microemulsion.6. The method as recited in claim 1 , wherein the surfactant system is present in the microemulsion in a range of about 10 wt % to about 40 wt % relative to a total weight of the microemulsion.7. The method as recited in claim 1 , wherein the surfactant system is present in the microemulsion in a range of about 13 wt % to about 29 wt % relative to a total weight of the microemulsion.8. The method as recited in claim 1 , wherein the water is present in the microemulsion in a range of greater than 0 wt % to about 10 wt % relative to total weight of the microemulsion.9. The method as recited in claim 1 , ...

SURFACE TREATMENT COMPOSITION, METHOD FOR PRODUCING SURFACE TREATMENT COMPOSITION, SURFACE TREATMENT METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

The present invention provides a composition for surface treatment that sufficiently removes the defect present on the surface of a polished object to be polished. The composition for surface treatment that includes a silicone-based compound having an HLB of more than 7 and water and is used to treat a polished object to be polished. 1. A composition for surface treatment comprising: a silicone-based compound having an HLB of more than 7; and water , the composition used to treat a polished object to be polished.2. The composition for surface treatment according to claim 1 , further comprising a dispersant.3. The composition for surface treatment according to claim 2 , wherein the dispersant is a polymer.4. The composition for surface treatment according to claim 1 , the composition containing substantially no abrasive grain.5. The composition for surface treatment according to claim 1 , wherein the polished object to be polished contains polysilicon or silicon oxide.6. A method for manufacturing the composition for surface treatment according to claim 1 , the method comprising mixing a silicone-based compound having an HLB of more than 7 and water.7. A method for surface treatment claim 1 , the method comprising treating a surface of a polished object to be polished using the composition for surface treatment according to .8. The method for surface treatment according to claim 7 , wherein the surface treatment is performed by a rinse polishing treatment or a cleaning treatment.9. A method for manufacturing a semiconductor substrate claim 7 , the method comprising treating a surface of a polished object to be polished by the method for surface treatment according to claim 7 ,wherein the polished object to be polished is a polished semiconductor substrate. The present invention relates to a composition for surface treatment, a method for manufacturing the composition for surface treatment, a method for surface treatment, and a method for manufacturing a semiconductor ...

Silicon wafer polishing composition and method

A chemical mechanical polishing composition for polishing a silicon wafer comprises, consists essentially of, or consists of a water based liquid carrier, colloidal silica particles dispersed in the liquid carrier, about 0.01 weight percent to about 2 weight percent of a dipolar aprotic solvent at point of use, and a pH in a range from about 8 to about 12. A method for polishing a silicon wafer may include contacting the wafer with the above described polishing composition, moving the polishing composition relative to the wafer, and abrading the wafer to remove silicon from the wafer and thereby polish the wafer.

MIXTURE COMPOSITION CONTAINING AMINO-FUNCTIONAL SILOXANES, HYDROPHOBIC PARTICLES AND HIGH MOLECULAR WEIGHT SILICONES AND ITS USE FOR LEATHER TREATMENT

The invention relates to mixture compositions containing amino-functional siloxanes, hydrophobic particles and high molecular weight silicones and their use for leather treatment. 1. A mixture composition comprising:A) 50 wt % -96.5 wt % of at least one amino-functional siloxane,B) 3 wt% -40 wt% of at least one high molecular weight silicone having a molecular weight average of at least 20,000 g/mol, andC) 0.5 wt % -10 wt % of hydrophobic particles, wherein the weight percentages are based on total components A), B) and C).3. A mixture composition according to claim 2 , wherein at least 50% of the Rmoieties are=R.4. A mixture composition according to claim 1 , wherein said at least one high molecular weight silicone is selected from the group consisting of linear silicone oils and branched silicone resins.5. A mixture composition according to claim 1 , wherein said hydrophobic particles have having a particle size distribution maximum in a range from 0.5-30 μm.6. A mixture composition according to claim 1 , wherein said hydrophobic particles are selected from hydrophobic or hydrophobized metal oxides claim 1 , metal soaps claim 1 , alkaline earth metal carbonates and alkaline earth metal salts of long-chain fatty acids having 12 to 22 carbon atoms claim 1 , amides of said fatty acids claim 1 , micronized waxes claim 1 , and oligo-ureas.7. A mixture composition according to claim 2 , wherein{'sup': 1', '3, 'sub': 2', '3', '2', '2', '3', '2', '2', '2, 'Rof formula (I) represents methyl and Rof formula (I) represents —(CH)—NHor —(CH)NH—(CH)NH, and'}{'sup': 5', '6', '6', '5, 'sub': 2', '1/2', '4/2, 'component B) is selected from the group of methyl- and/or phenyl-substituted having average molecular weights of more than 50 000 g/mol, or from the group of branched silicone resins consisting essentially of RRSiO(“M”)- and SiO(“Q”)- and/or RSiO3/2 (“T”) units, where Rrepresents methyl and the molar ratio M to Q and T units (M/(Q+T)) is in a range from 0.5/1 to 1.5/1 and ...

POLISHING COMPOSITION

The present invention relates to a polishing composition used in application in which a polishing object having a cobalt element-containing layer is polished, including: a cobalt dissolution inhibitor; and a pH adjusting agent, wherein the polishing composition has a pH of 4 or more and 12 or less, and the cobalt dissolution inhibitor is at least one member selected from the group consisting of an organic compound having an ether bond, an organic compound having a hydroxyl group, an organic compound having a carboxyl group and having a molecular weight of 130 or more, and salts thereof. According to the present invention, there is provided a polishing composition capable of suppressing the dissolution of a cobalt element-containing layer when a polishing object having a cobalt element-containing layer is polished. 1. A polishing composition used in application in which a polishing object having a cobalt element-containing layer is polished , comprising:a cobalt dissolution inhibitor; anda pH adjusting agent, whereinthe polishing composition has a pH of 4 or more and 12 or less, andthe cobalt dissolution inhibitor is at least one member selected from the group consisting of an organic compound having an ether bond, an organic compound having a hydroxyl group, an organic compound having a carboxyl group and having a molecular weight of 130 or more, and salts thereof.2. The polishing composition according to claim 1 , wherein the organic compound having an ether bond has a polyoxyethylene structure and/or a polyoxypropylene structure.3. The polishing composition according to claim 1 , wherein the organic compound having a hydroxyl group has an alcohol skeleton or a phenol skeleton.4. The polishing composition according to claim 1 , wherein the cobalt dissolution inhibitor is an organic compound having an ether bond and a hydroxyl group.5. A method of polishing a polishing object having a cobalt element-containing layer claim 1 , wherein a metal wiring layer is polished ...

POLISHING AGENT AND METHOD FOR POLISHING SUBSTRATE USING THE POLISHING AGENT

Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent. 1. A polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive , wherein the additive contains at least one selected from the group consisting of the following compounds (1) and (2):(1) an allylamine polymer or a derivative thereof and(2) a diallylamine polymer or a derivative thereof2. The polishing agent according to claim 1 , wherein the average particle size of the tetravalent metal hydroxide particles is from 1 nm to 400 nm.3. The polishing agent according to claim 1 , wherein the pH of the polishing agent is from 3.0 to 7.0.4. The polishing agent according to claim 1 , wherein the content of the tetravalent metal hydroxide particles is from 0.001 parts by weight to 5 parts by weight relative to 100 parts by weight of the polishing agent.5. The polishing agent according to claim 1 , wherein the zeta potential of the tetravalent metal hydroxide particles in the polishing agent is +10 mV or higher.6. The polishing agent according to claim 1 , wherein the content in total of the additive is 0.0001 by weight or more relative to 100 parts by weight of the polishing agent.7. The polishing agent according to claim 1 , further comprising polyvinyl alcohol.8. The polishing agent according to claim 1 , which is used for polishing a surface to be polished containing at least silicon oxide at the surface.9. The ...

HEXAVALENT CHROMIUM FREE ETCH MANGANESE VACUUM EVAPORATION SYSTEM

Methods and systems for removing water from a manganese-based etchant bath are disclosed. Water is removed from the manganese-based etchant bath by transferring a portion of the manganese-based etchant bath to a vacuum evaporator for processing and transferring the concentrated portion of the manganese-based etchant bath back to the manganese-based etchant bath. 1. A method for removing water from a source of manganese ions , the method comprising:directing at least a portion of the source of manganese ions through a conduit, wherein the conduit comprises a filter for filtering undissolved particles;concentrating the portion of the source of manganese ions with a vacuum evaporator;returning the concentrated portion to a manganese-based etchant bath.2. The method according to claim 1 , wherein the concentrated portion comprises an acid.3. The method according to claim 2 , further comprising purifying the acid.4. The method according to claim 1 , wherein the vacuum evaporator further comprises a heat source.5. The method according to claim 1 , wherein the manganese-based etchant bath is configured to etch a substrate.6. The method according to claim 1 , wherein a second conduit returns the concentrated portion to the manganese-based etchant bath.7. The method according to claim 1 , wherein the first conduit further comprises a one-way valve for preventing the portion of the source of manganese ions from returning to the source of manganese ions via the conduit.8. A method for removing water from a manganese-based etchant bath claim 1 , the method comprising:directing at least a portion of a manganese-based etchant bath through a conduit, wherein the conduit comprises a one-way valve for prohibiting the portion of the manganese-based etchant bath from returning to the manganese-based etchant bath via the conduit;concentrating the portion of the manganese-based etchant bath with a vacuum evaporator;returning the concentrated portion to the manganese-based etchant bath.9 ...

POLISHING COMPOSITION AND METHOD FOR POLISHING SYNTHETIC RESIN

There is provided a polishing composition which can be more suitably used for polishing a synthetic resin product or the like, and a polishing method for polishing a polishing object using a polishing composition. There is provided a polishing composition containing abrasives, 0.01% by mass or more and 15% by mass or less of a monovalent acid-aluminum salt, a pyrrolidone compound or a caprolactam compound, and water and having a pH of 7.0 or less. 1. A polishing composition comprising:abrasives;0.01% by mass or more and 15% by mass or less of a monovalent acid-aluminum salt;a pyrrolidone compound or a caprolactam compound; andwater, whereina pH is 7.0 or less.2. The polishing composition according to claim 1 , wherein the pH is 4.5 or less.3. The polishing composition according to claim 1 , wherein the pH is 3.4 or less.4. The polishing composition according to claim 1 , wherein the abrasives contain alumina.5. The polishing composition according to claim 4 , wherein a volume-based average particle diameter of the alumina is 0.1 μm or more and 0.5 μm or less.6. The polishing composition according to claim 4 , wherein a BET specific surface area of the alumina is 10 m/g or more and 50 m/g or less.7. The polishing composition according to claim 4 , wherein an α-conversion rate of the alumina is 50% or more.8. The polishing composition according to claim 1 , wherein the abrasives contain silica.9. The polishing composition according to claim 8 , whereina volume-based average particle diameter of the silica is 0.02 μm or more and 0.3 μm or less.10. The polishing composition according to claim 1 , whereina content of the monovalent acid-aluminum salt is 5% by mass or more and 15% by mass or less.11. The polishing composition according to claim 1 , whereinthe monovalent acid-aluminum salt is at least one selected from aluminum nitrate or aluminum chloride.12. The polishing composition according to claim 1 , wherein the polishing composition is used for polishing a ...

CHEMICAL-MECHANICAL POLISHING COMPOSITIONS COMPRISING N,N,N',N'-TETRAKIS-(2-HYDROXYPROPYL)-ETHYLENEDIAMINE OR METHANESULFONIC ACID

Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6. 1. A chemical-mechanical polishing (CMP) composition comprising:(A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6,(B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid,(C) water(D) optionally one or more further constituents,wherein the pH of the composition is in the range of ranges from 2 to 6.2. The chemical-mechanical polishing (CMP) composition according to claim 1 , wherein the surface modified silica particles of component (A) having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 are silica particles anionically modified with metallate ions or modified with sulfonic acid.3. The chemical-mechanical polishing (CMP) composition according to claim 1 , wherein the surface modified silica particles of component (A) having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 are silica particles anionically modified with metallate ions selected from the group consisting of aluminate claim 1 , stannate claim 1 , zincate claim 1 , and plumbate.4. The chemical-mechanical polishing (CMP) composition according to claim 1 , wherein the surface modified silica particles of component (A) having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 are silica particles anionically modified with aluminate.5. The chemical-mechanical polishing (CMP) composition according to claim 1 , whereinthe total amount of (A) surface modified silica particles having a negative ...

POLISHING SLURRY AND POLISHING MATERIAL

A polishing slurry according to the present invention contains: abrasive grains made of a metal oxide; a permanganate; and an inorganic compound other than the permanganate. The inorganic compound is such that a solution that is obtained by adding the inorganic compound to a 1.0 mass % aqueous solution of the permanganate so that the inorganic compound accounts for 1.0 mass % of the resultant aqueous solution has an oxidation-reduction potential higher than that of the 1.0 mass % aqueous solution of the permanganate. It is preferable that the inorganic compound be contained in an amount of 0.7 parts by mass or more and 150 parts by mass or less relative to 100 parts by mass of the permanganate. It is also preferable that the abrasive grains made of a metal oxide be manganese oxide particles. 1. A polishing slurry comprising:abrasive grains made of a metal oxide;a permanganate; andan inorganic compound other than the permanganate,wherein the inorganic compound is such that a solution that is obtained by adding the inorganic compound to a 1.0 mass % aqueous solution of the permanganate so that the inorganic compound accounts for 1.0 mass % of the resultant aqueous solution has an oxidation-reduction potential higher than that of the 1.0 mass % aqueous solution of the permanganate.2. The polishing slurry as set forth in claim 1 ,wherein the inorganic compound is contained in an amount of 0.7 parts by mass or more and 150 parts by mass or less relative to 100 parts by mass of the permanganate.3. The polishing slurry as set forth in claim 1 ,wherein the abrasive grains made of a metal oxide are manganese oxide particles.4. The polishing slurry as set forth in claim 1 ,wherein the polishing slurry has a pH at 25° C. of 1.0 or more and 8.0 or less before polishing.5. The polishing slurry as set forth in claim 1 ,wherein the polishing slurry is used in polishing that does not use fixed abrasive grains.6. A polishing material comprising:a first agent that contains abrasive ...