СПОСОБ И УСТРОЙСТВО ДЛЯ НАНЕСЕНИЯ ГАЛЬВАНИЧЕСКИХ ПОКРЫТИЙ

Изобретение относится к гальванотехнике. Устройство для нанесения гальванического покрытия содержит средство направления потока электролита на покрываемую поверхность, средство управления количеством и/или скоростью восстановления ионов на выбранных участках покрываемой поверхности и средство управления током, подаваемым на них. Средство управления током снабжено средством для измерения тока, протекающего к выбранным участкам покрываемой поверхности, для управления током в зависимости от результатов измерений. Устройство снабжено средством для завихрения потока электролита в непосредственной близости с указанными участками для создания вихрей при соударении потока электролита с указанными участками для повышения скорости восстановления ионов. Компьютерный программный продукт содержит считываемые компьютером программные средства для направления потока электролита на покрываемую поверхность и управления количеством и/или скоростью восстановления ионов на выбранных участках покрываемой поверхности ...

Способ создания сенсора газов и паров на основе чувствительных слоев из металлсодержащих кремний-углеродных пленок

Изобретение относится к области гальванотехники и может быть использовано в области сенсорной техники, а именно: при создании конструктивных элементов сенсоров газов и газоаналитических мультисенсорных линеек хеморезистивного и импедансометрического типов. Способ заключается в создании чувствительных слоев сенсора на основе кремний-углеродных пленок, при этом металлсодержащую кремний-углеродную пленку формируют методом электрохимического осаждения на диэлектрической подложке с контактной металлизацией в виде встречно-штыревой структуры из растворов органических электролитов состава метанол/гексаметилдисилазан в соотношении 9:1, при этом сначала кремний-углеродную пленку осаждают на подложку в течение 40 мин при постоянном напряжении 120 В и начальной плотности тока 60 мА/см2, затем кремний-углеродную пленку модифицируют атомами металла путем добавления в раствор электролита соли используемого металла с последующим электрохимическим осаждением в течение 5 мин при постоянном напряжении 50 ...

Способ электрохимического осаждения кремний-углеродных пленок на диэлектрические подложки

Изобретение относится к области технологий получения кремний-углеродных пленок, с помощью гальванических процессов, на диэлектрических материалах и может быть использовано для производства устройств газовой сенсорики, автоэмиссионных электродов и электродов суперконденсаторов. Способ включает электрохимическое осаждение кремний-углеродных пленок из органического кремний- и углеродсодержащего электролита, состоящего из гексаметилдисилазана в метиловом или этиловом спирте, на подложку, расположенную на катоде, на который относительно анода подают напряжение до 600 В с плотностью тока до 70 мА/см, при этом устанавливают расстояние между катодом и анодом до 1 см и получают кремний-углеродную пленку, имеющую фазу карбида кремния SiС, при этом на диэлектрической подложке из слоя электропроводящего материала формируют топологию в виде набора электропроводящих площадок различной геометрической формы с зазором между ними до 200 мкм, в котором происходит осаждение кремний-углеродных пленок и их непосредственный ...

Способ электрохимического осаждения легированных атомами переходных металлов кремний-углеродных пленок на электропроводящие материалы

Изобретение относится к области гальванотехники и может быть использовано в технологии тонкопленочной микроэлектроники для получения химически, механически, коррозионно- и термостойких покрытий с заданными электрическими и/или магнитными, и/или прочностными свойствами. Способ включает формирование кремний-углеродной пленки методом электрохимического осаждения из электролита, состоящего из гексаметилдисилазана в метиловом или этиловом спирте и соли переходного металла, на электропроводящую подложку с ранее осажденной электрохимическим методом кремний-углеродной пленкой, расположенной на катоде, на который относительно анода подают напряжение до 200 В с плотностью тока до 50 мА/см. Технический результат: получение легированной атомами переходных металлов кремний-углеродной пленки, имеющей фазы карбида кремния и оксидов переходных металлов, обладающей заданными электрическими и прочностными свойствами, химической, механической, коррозионной и термостойкостью на любых электропроводящих материалах ...

Способ присоединения выводов к полупроводниковым приборам

Chip-size package production

Production of a semiconductor chip-size housing (CSP) involves (a) bonding conductive wires (45) onto bond pads on a chip (41); (b) placing the chip in an electrolysis cell (55) such that the wire ends are outside the electrolyte solution (50) of the cell; (c) fitting an electroplating electrode (60) on an inner wall of the cell; (d) placing a conductive plate (65) as common electrode on the exposed wire ends; and (e) connecting the conductive plate (65) and the outer wall of the cell (55) to a current source (70). Preferably, the wires (45) consist of gold, the conductive plate (65) consists of copper and the electroplating electrode (60) consists of nickel or gold.

Korrosionswiderstand verbesserndes Elektroplattierungsverfahren und elektroplattierter Gegenstand.

PLATTIERUNGSSYSTEM MIT ABGESETZTER SEKUNDÄRANODE ZUR HALBLEITERFABRIKATION

Verfahren und Vorrichtung zum lichtinduzierten Galvanisieren von Halbleiter-Bauelementen und Halbleiter-Bauelement

Eine Vorrichtung zur lichtunterstützten Abscheidung eines Elektrolyten auf einem Halbleiter-Bauelement (1) umfasst ein Galvanik-Bad (2) mit einem Elektrolyten (3), einer ersten, im Galvanik-Bad (2) angeordneten Elektrode (4) und einer zweiten, außerhalb des Galvanik-Bades (2) angeordneten Elektrode (5), eine Halte-Einrichtung (9) für das Halbleiter-Bauelement (1) und eine Bestrahlungs-Einrichtung (15) zur Bestrahlung des Halbleiter-Bauelements (1) mit elektromagnetischer Strahlung, wobei die Bestrahlungs-Einrichtung (15) außerhalb des Galvanik-Bades (2) angeordnet ist.

Vorrichtung und Verfahren zum elektrochemischen Behandeln eines Substrats bei reduzierter Metallkorrosion

Prozessanlage zur elektrochemischen Behandlung eines Substrats, mit: einem Galvanisierungsreaktor, einer Substratreinigungsstation, einer Substrattrocknungsstation und einem Transportmodul; und einer Abdeckung, die den Galvanisierungsreaktor und zumindest teilweise die Substratreinigungsstation, die Substrattrocknungsstation und das Transportmodul umschließt, um ein inneres Volumen mit einer inneren Gasatmosphäre zu definieren, wobei die Abdeckung so ausgestaltet ist, um einen Gasaustausch mit einer Umgebungsatmosphäre zu vermeiden dadurch gekennzeichnet, dass die innere Gasatmosphäre eine inerte Gasatmosphäre ist.

Method for manufacturing semiconductor device

An amorphous Ni-P layer (10) which cancels crystallinity of a base metal layer is formed on the base metal layer, such as an FET electrode, by electroless gilding and then an electrolytic Au gilding layer (9) is formed on the amorphous Ni-P layer. Thus, luster nonuniformity of the electrolytic Au gilding layer formed on the base metal layer, such as the FET electrode, is avoided so that a position of an electrode pad can be mechanically detected in an easy manner, during auto- bonding, and its appearance is improved. Processing of MMICs is thus improved. ...

An electroplating solution for the deposition of a metal within an integrated circuit that provides a high yield strength and improved adhesion

A method and a system for automatically controlling a current distribution of a multi-anode arrangement during the plating of a metal on a substrate surface

An electroplating tool (200) is operated in combination with a controller (250), which automatically determines the individual currents for a multi-anode configuration (102A, ..., 102N) of the plating tool. The calculation of the anode currents may be based on sensitivity data and measurement data as well as on a desired target profile, so that a fast response with respect to process variations may be achieved even for a plating tool including a plurality of process chambers (101A, 101B).

Fabrication of semiconductor devices

An electroplating solution for the deposition of a metal within an integrated circuit that provides a high yield strength and improved adhesion

Depositing a tantalum film

Process for the manufacture of semiconductor arrangements

A semi-conductor device is made by selective electrolytic deposition of metal from an alkaline bath containing the metal in the form of a complex on a 111 surface of a monocrystalline body of a semi-conductor compound crystallizing in the zinc blende lattice followed by alloying the metal to the body. Deposition takes place only on <\>b1<\>b1<\>\b1 planes i.e. 111 planes at which there are free pairs of electrons e.g. in gallium arsenide the 111 planes containing only arsenic atoms. In this way cadmium, copper, indium, silver and zinc may be deposited on the sulphides and selenides of zinc and cadmium and the arsenides, antimonides and phosphides of gallium and indium. Cadmium, copper, indium, silver and zinc are preferably deposited from complex cyanide electrolytes but zinc, copper and tin may also be deposited from electrolytes in which the metal is complexed with ethylene-diamino-tetra-acetic acid. Suitable electrolyte compositions are specified. One or more other metals may be successively ...

Method and apparatus for plating metals

ELECTRO-CHEMICAL SEPARATING OF SOLDERING BALLS WITH UNIFORM HEIGHT ON SEMICONDUCTOR SUBSTRATES

DEVICE AND PROCEDURE FOR THE CHEMICAL AND ELECTROLYTIC TREATMENT OF WORKPIECES

DEVICE AND PROCEDURE FOR THE WET TREATMENT OF DIFFERENT SUBSTRATES

MATERIAL SEPARATION FROM A LIQUEFIED GAS SOLUTION

DEVICE AND PROCEDURE FOR THE ELECTROLYTIC SEPARATION OF METALS OF MEANS OF A ROTARY CATHODE SYSTEM

VORRICHTUNG ZUM METALLISIEREN VON WAFERN

The invention relates to a device (1) for metallizing wafers (11), in particular microchip wafers, in an electrolyte, the device consisting of a plurality of holder arrangements (3), each holder arrangement (3) having a chamber (27) for the electrolyte which is separate from the electrolyte-receiving chambers (27) in other holder devices (3), and a ring (15) acting as cathode and an anode system (29) as anode being associated with each wafer (11).

METALLIZATION STRUCTURES FOR MICROELECTRONIC APPLICATIONS AND PROCEDURES FOR THE PRODUCTION OF THESE STRUCTURES

PROCEDURE AND DEVICE FOR PLATING AND POLISHING A SEMICONDUCTOR COMPONENT

Semiconductor workpiece proximity plating methods and apparatus

COATING SUPPORT AND METHOD FOR THE SELECTIVE COATING OF CONDUCTIVE TRACKS ON ONE SUCH SUPPORT

PLATING BATH COMPOSITION CONTROL

Method and device for treating a wafer

In a method for coating a wafer to produce solar cells, a metal such as nickel, copper, or silver is deposited on the wafer in a continuous process in a coating bath containing said metal. A wafer is inserted into the coating bath, and at a time at which a first area of the wafer already extends into the coating bath but a second area does not yet extend into the coating bath, a current surge is applied to the second area of the wafer to initiate the galvanic deposition of the metal on the first area of the wafer reaching into the coating bath for a subsequent further automatic coating, with the wafer completely inserted into the coating bath, also of the remaining area of the wafer without further current surge or current flow.

Electroplating apparatus and process for reducing oxidation of oxidizable plating anions and cations

Apparatus and method for electroplating a wafer surface

Apparatus and methods for controlling workpiece surface exposure to processing liquids during the fabrication of microelectronic components

Substrate holder system with substrate extension apparatus and associated method

Photoplating of metal electrodes for solar cells

A method of photoplating a metal contact onto a surface of a cathode of a photovoltaic device is provided using light induced plating technique. The method comprises: a) immersing the photovoltaic device in a solution of metal ions, where the metal ions are a species which is to be plated onto the surface of the cathode of the photovoltaic device; and b) illuminating the photovoltaic device, using a light source of time varying intensity. This results in nett plating which is faster in a direction normal to the surface of the cathode than in a direction in a plane of the surface of the cathode.

Preparation of CuxInyGazSen (x=0-2, y=0-2, z=0-2, n=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells

Article, method, and apparatus for electrochemical fabrication

Electrical contact structures from flexible wire

DEVICE AND METHOD TO CONDUCT AN ELECTROCHEMICAL REACTION ON A SURFACE OF A SEMICONDUCTOR SUBSTRATE

The invention concerns a device to conduct an electrochemical reaction on the surface of a semiconductor substrate (S), characterized in that the device comprises: - a container (10) intended to contain an electrolyte (E), - a support (20) arranged in the container, said support being adapted for attachment of the semiconductor substrate (S) on said support (20), - a counter-electrode (30) arranged in the container (10), - illumination means (50) comprising a source (51 ) emitting light rays and means (52) to homogenize the light rays on all of said surface of the semiconductor substrate (S), so as to activate the surface of the semiconductor substrate (S), and - an electric supply (40) comprising connection means for connection to the semiconductor substrate and to the counter-electrode in order to polarize said surface of said semiconductor substrate (S) at an electric potential permitting the electrochemical reaction. The invention also concerns the method to conduct an electrochemical ...

METHOD AND DEVICE FOR TREATING A WAFER

In a method for coating a wafer to produce solar cells, a metal such as nickel, copper, or silver is deposited on the wafer in a continuous process in a coating bath containing said metal. A wafer is inserted into the coating bath, and at a time at which a first area of the wafer already extends into the coating bath but a second area does not yet extend into the coating bath, a current surge is applied to the second area of the wafer to initiate the galvanic deposition of the metal on the first area of the wafer reaching into the coating bath for a subsequent further automatic coating, with the wafer completely inserted into the coating bath, also of the remaining area of the wafer without further current surge or current flow.

METHOD FOR GALVANICALLY FORMING CONDUCTOR STRUCTURES OF HIGH-PURITY COPPER IN THE PRODUCTION OF INTEGRATED CIRCUITS

... ▓▓▓The invention relates to a method for galvanically forming conductor ▓structures of high-purity copper on surfaces of semiconductor substrates ▓(wafers) (1) during the production of integrated circuits, said semiconductor ▓substrates being provided with indentations (2). The inventive method ▓comprises the following steps: a) coating the entire surfaces of the ▓semiconductor substrates (1) which are provided with indentations (2) with a ▓backing material layer in order to obtain a sufficient conductivity for the ▓galvanic deposition process; b) depositing copper layers (3) having an even ▓layer thickness on the entire surface of the backing material layer via a ▓galvanic metal deposition process by contacting the semiconductor substrates ▓with a copper deposition bath. Said copper deposition bath contains at least ▓one copper ion source, at least one additive compound for controlling the ▓physico-mechanical properties of the copper layers and Fe(II) and/or Fe(II) ▓compounds. Between ...

FORMING AN OXIDE LAYER ON A FLAT CONDUCTIVE SURFACE

A method and apparatus for electrochemically forming an oxide layer on a flat conductive surface which involves positioning a working electrode bearing the flat conductive surface in opposed parallel spaced apart relation to a flat conductive surface of a counter electrode such that the flat conductive surface of the working electrode and the flat conductive surface of the counter electrode are generally opposed, horizontally oriented, and define a space therebetween. A volume of organic electrolyte solution containing chemicals for forming the oxide layer on the flat conductive surface of the working electrode is arranged to flood the flat conductive surface of the counter electrode surface and to occupy the space defined between the flat conductive surface of the working electrode and the flat conductive surface of the counter electrode such that at least the flat conductive surface of the counter electrode is in contact with the organic electrolyte solution and substantially only the ...

Verfahren zur Herstellung einer Halbleitervorrichtung

Verfahren zur elektrolytischen Behandlung eines Körpers aus halbleitendem Material

Corps semi-conducteur électrique et procédé de fabrication de ce corps.

Elektrisches Halbleiterbauelement mit mindestens einem Anschlusskontaktkörper aus Wolfram und Verfahren zu seiner Herstellung

Verfahren zur Dotierung von Halbleiterkörpern und Vorrichtung zur Durchführung dieses Verfahrens

Verfahren zur Herstellung einer Halbleiteranordnung mit einem Silicium-Halbleiterkörper

Contact layers for semiconductor devices

A coherent metal layer is deposited on a substrate. Simultaneously particles of semiconductor material, which are capable of alloying with the metal, are incorporated in the metal layer. The deposition is effected from a suspension, which is produced by suspending the particles of the semiconductor material in a fluid, and at a temperature lower than that at which the metal and the particle semiconductor material alloy together. Heating alloys together the metal and the particle semiconductor material. The metal layer may be applied by electrodeposition, by electroless deposition or with the aid of a gravitational effect. The metal deposited may be gold or silver. The particles of semiconductor material may be of silicon, germanium or gallium arsenide. Doping agents secuh as borom may bed used. IUt is possible to apply a thin metal layer, followed by simultaneous deposition of metal and semiconductor material. Then pure metal could again be applied.

Verfahren zur Herstellung von Halbleiteranordnungen durch Einlegieren wenigstens eines Metalls in einen Halbleiterkörper

Verfahren zum Herstellen von gleichzeitig mehreren Halbleiterbauelementen

Elektrische Schaltungsanordnung mit einem elektrischen Anschluss und Verfahren zu ihrer Herstellung

Verfahren zur Herstellung einer Halbleitervorrichtung

Verfahren zum Kontaktieren von Halbleiteranordnungen

Device for the electrolytic separation of metals by means of a rotating cathode system

A device for the electrolytic separation of metals in a metal recovery cell having a rotating cathode system is described which consists of a support cylinder (11) having at least one slot (21) and at least one compacting chamber (25) situated therebehind, of at least one coated cathode (20), of means for contacting and of a driveshaft (5) having means for supplying power. This device permits simple manipulation of the support cylinder (11) with the coated cathode (20), and the selection of the coated cathode material, since the latter can be optimally matched to the respective electrolytic preparation. The method described is applied in removing metals from metal-containing, sufficiently electroconductive solutions, and in the enrichment of such solutions for the purpose of returning them to the working process. ...

Plating uniformity control by contact ring shaping

Copper electrodeposition bath containing electrochemically inert cation

Inert anode electroplating processor and replenisher with anionic membranes

Metal bump manufacturing method and chip

工件湿法处理

... 本发明提供了一种用于在湿法处理例如电解沉积等中对工件例如半导体晶片等的下侧进行流体密封的方法和装置，其中使用了一个由挠性指组成的弹性嵌入环，工件下侧周边顶靠在挠性指上，以使得挠性指向下偏移，且使一周向密封边缘贴合在工件下侧周边上。这样可以获得与工件之间的电接触，使电触点端和工件的下侧周边弹性贴合，所述电触点端从位于密封环内的弹性体覆盖物中的周边开口中突伸出来。 ...

Solar electroplating equipment part

Electroplating clamp for solar battery piece

Method for electrolessly filling large recessed features with high aspect ratio using metal and, electroplating device and, system for aqueous electroplating bath solution

Preparation method and application of copper-copper bonding material

Device for plating nickel and gold on crystal grains

Method for preparing two-dimensional layered vertical heterojunction

Electrochemically deposited indium composites

Electrochemically deposited indium composites are disclosed. The indium composites include indium metal or an alloy of indium with one or more ceramic materials. The indium composites have high bulk thermal conductivities. Articles containing the indium composites also are disclosed.

Process for producing high-power light emitting diode (LED) substrate

Structure comprising a barrier layer of a tungsten alloy and manufacturing method thereof

Plating method

ELECTRO-DEPOSITION OF NANO TWINNED COPPER STRUCTURES

A copper structure having a high density of nano twins is deposited on a substrate. Electroplating conditions for depositing a nano twinned copper structure may include applying a pulsed current waveform that alternates between a constant current and no current, where a duration of no current being applied is substantially greater than a duration of a constant current being applied. In some implementations, the nano twinned copper structure is deposited by applying a pulsed current waveform followed by a constant current waveform. In some implementations, the nano twinned copper structure is deposited on a highly-oriented base layer, where an electroplating solution contains an accelerator additive. In some implementations, the nano twinned copper structure is deposited on a non-copper seed layer. In some implementations, the nano twinned copper structure is deposited at a relatively low flow rate.

MANUFACTORING PROCESS Of a FRAMEWORK OF ASSEMBLY

Process for the manufacture of a semiconductor device and semiconductor device thus manufactured

METHODS OF ELECTROCHEMICALLY TREATING SEMICONDUCTOR SUBSTRATES, AND METHODS OF FORMING CAPACITOR CONSTRUCTIONS

METHODS AND APPARATUS TO REDUCE GROWTH FORMATIONS ON PLATED CONDUCTIVE LEADS

CANTILEVER BEAMS AND MANUFACTURING METHOD OF INTERCONNECTS FACTOR USING SACRIFICIAL SUBSTRATES

Multiple layer complex of graphene and conducting polymer through electrochemical deposition and method thereof

기포제거를 위한 도금용 진동발생장치

... 본 발명은 기포제거를 위한 도금용 진동발생장치에 관한 것으로서, 보다 상세하게는 도금액이 충진되는 도금조의 상부에 배치되는 고정프레임에 상기 도금액을 진동시키도록 설치되는 진동발생장치로서, 상기 고정프레임의 상부에 배치되는 베이스패널과, 상기 베이스패널의 상부에 설치되는 완충스프링과, 상기 지지스프링의 상부에 배치되는 앵글패널부재과, 상기 앵글패널부재의 상부에 설치되는 바이브레이터와, 상기 앵글패널부재의 전면패널에 고정되고, 상기 도금조에 인입되는 진동패널과, 상기 고정프레임에 하부가 고정되는 브라켓과, 상기 브라켓의 지지바와 앵글패널부재를 연결하는 지지스프링으로 이루어져, 바이브레이터가 마련된 앵글패널부재에 설치되는 진동패널을 사각의 판형상으로 형성시킴으로서, 넓은 면적으로 도금액에 진동이 전달되어기판에 배치되는 에어포켓의 제거효율을 향상시킬 수 있게 되는 효과가 있다.

Electrolyte

PLATING METHOD AND APPARATUS

이미다졸 및 비스에폭사이드 화합물의 반응 산물을 함유하는 구리 전기도금조로부터 포토레지스트 정의된 특징부의 전기도금 방법

... 전기도금 방법은 실질적으로 균일한 형태를 갖는 포토레지스트 정의된 특징부의 도금을 가능케 한다. 전기도금 방법에는 포토레지스트 정의된 특징부를 전기도금하기 위해 이미다졸 및 비스에폭사이드의 반응 산물을 포함하는 구리 전기도금조가 포함된다. 이러한 특징부에는 기둥, 결합 패드 및 라인 스페이스 특징부가 포함된다.

Reaction products of bis anhydrides and diamines as additives for electroplating baths

PLATING APPARATUS AND METHOD

process method for battery terminal cellular phone

METHOD AND APPARATUS FOR ELECTROPLATING SEMICONDUCTOR WAFER WHEN CONTROLLING CATIONS IN ELECTROLYTE

PROCESS TO OPTIMIZE COBALT ELECTROFILL USING SACRIFICIAL OXIDANTS

Embodiments of the present invention relate to methods, an apparatus, and systems using a superconformal fill mechanism providing relatively high speed plating in a feature and providing relatively low speed plating in a field area to electroplate metal in recessed features. Moreover, in the feature, plating occurs towards a bottom of the feature at a high speed in comparison with a top of the feature. Consequently, a feature upwardly filled with the metal from the bottom is formed and high quality fill is generated without forming cores, voids, or defects as if the feature using a conformal fill mechanism is used. The superconformal fill mechanism depends on a sacrificial oxidant molecule used to exhibit differential current efficiency in the feature in comparison with the field area. To guarantee that the feature is upwardly filled from the bottom, various plating conditions are offset with each other. Organic plating additives are not required, but plating additives are able to be used ...

PLATING APPARATUS CAPABLE OF OBTAINING A UNIFORM PLATING THICKNESS FOR A RECTANGULAR SUBSTRATE EVEN WHEN USING A CUP TYPE PLATING METHOD

PURPOSE: A plating apparatus is provided to apply a cup type plating method to a rectangular substrate, thereby preventing defects generated by the contamination of a plating solution, and lowering the cost generated by the initial make-up of the plating solution and additive supplementation. CONSTITUTION: A plating apparatus comprises a plating bath, an anode(150), and a cathode. A nozzle for plating solution is formed on the bottom surface of the plating bath. A slit(155) is formed at the anode on the upper side of the nozzle. The cathode is on the upper side of the plating bath. The slit is either longitudinally or transversely formed. An auxiliary slit(145) corresponding to the slit is further formed at an auxiliary panel(140) between the nozzle and the anode. The auxiliary panel is made of either PVC(Poly Vinyl Chloride) or HPVC(Hard Poly Vinyl Chloride). The cathode is at least one shape of elastic pins. A sealing part is further formed at the upper side of the plating bath. COPYRIGHT ...

THE ELECTROLYTE SOLUTION CONTAINING BROMIDE ION FOR COPPER ELECTRODEPOSITION AND COPPER ELECTRODEPOSITION METHOD USING THE SAME

TSV 구리 도금에 의한 마이크로비아-필링 방법을 변경할 수 있는 첨가제 C 및 이를 포함하는 전기도금액

... 본 발명은 TSV 구리 도금에 의한 마이크로비아-필링 방법을 변경할 수 있는 첨가제 C, 및 이를 포함하는 전기도금액에 관한 것이다. 상기 첨가제 C는 200-100,000의 분자량을 갖는 하나의 폴리에틸렌 글리콜 또는 폴리비닐 알코올, 또는 이의 서로 다른 분자량을 갖는 혼합물을 질량백분율로 5%-10% 포함하고; 알킬페놀 폴리옥시에틸렌 에테르 또는 지방 알코올-폴리옥시에틸렌 에테르를 포함하는 계면활성제의 이성질체를 질량백분율로 0.001%-0.5% 포함하며; 용매는 물이다. 상기 첨가제 C를 포함하는 전기도금액은 TSV 구리 도금에 의한 마이크로비아-필링을 위해 사용될 수 있고, 전기도금 전류 분배는 컨포멀 도금과 바텀-업 도금 사이의 순조로운 이행을 위해 합리적으로 조정될 수 있으며, 코팅에서 균열 또는 공극의 가능성을 줄이기 위해 고속 전기도금을 실현하고, 구리층의 두께를 감소시키며, TSV 도금 시간 및 화학적 기계 연마(CMP)의 비용을 줄이고, 생산효율을 현저하게 개선시킨다.

수성 구리 도금 조 및 구리 또는 구리 합금을 기판 상에 침착시키는 방법

... 본 발명은 인쇄 회로 기판, IC 기판, 전자 응용을 위한 반도체 및 유리 소자의 제조에서 구리 및 구리 합금 침착을 위한 수성 도금 조에서의 비스유레아 유도체 및 이들의 용도에 관한 것이다. 본 발명에 따른 도금 조는 적어도 하나의 구리 이온 공급원 및 비스우레아 유도체를 포함한다. 도금 조는 구리 및 필라 범프 구조의 형성으로 함몰된 구조를 충진하기 위한 용도에 관한 것이다.

NON CYANIDE GOLD PLATING BATH FOR BUMP AND FORMING METHOD OF GOLD BUMP

METHOD OF ELECTROPLATING A WORKPIECE HAVING HIGH-ASPECT RATIO HOLES

In order to electroplate workpieces comprising high-aspect ratio holes a method is disclosed comprising the steps bringing the workpiece and at least one anode into contact with a metal plating electrolyte, and applying a voltage between the workpiece and the anodes, to the effect that a current flow is provided to the workpiece. The current flow is a pulse reverse current flow having a frequency of at most about 6 Hertz. According to the frequency each cycle time comprises at least one forward current pulse and at least one reverse current pulse. © KIPO & WIPO 2007 ...

METHOD FOR ELECTROPLATING COPPER INTO VIA ON SUBSTRATE FROM ACID COPPER ELECTROPLATING BATH

A copper electroplating bath containing an ethylene oxide/propylene oxide random copolymer having a predetermined HLB range and a primary alcohol alkoxilate block copolymer is appropriate to fill a via with copper. A copper deposit actually does not have a void and a surface defect. COPYRIGHT KIPO 2017 ...

SURFACE TREATING APPARATUS WHICH PHYSICALLY REMOVE AIR BUBBLES ATTACHED TO A WORK PIECE

PURPOSE: A surface treating apparatus is provided to prevent the increase of plating thickness due to the concentration of an electric field on the bottom of a work piece by masking the top and bottom of the work piece with a mask member. CONSTITUTION: A surface treating apparatus comprises a guide rail, a transfer jig(30), a surface treatment tank, a pre-treatment tank, and a vibrating unit(500). The transfer jig holds a work piece(20) transferred in a transfer direction along the guide rail. The surface treatment tank implements surface treatment of the work piece held by the transfer jig. The pre-treatment tank is arranged in the upstream of the surface treatment tank in the transfer direction and dips the work piece held by the transfer jig in a treatment solution. The vibrating unit makes the work piece vibrate in the treatment solution by vibrating the transfer jig holding the work piece dipped in the treatment solution. COPYRIGHT KIPO 2012 ...

아민과 폴리아크릴아미드와 비스에폭시드의 반응 생성물을 함유하는 구리 전기도금욕

... 구리 전기도금욕은 아민과 폴리아크릴아미드와 비스에폭시드의 반응 생성물을 포함한다. 반응 생성물은 평활제로서 작용하고, 높은 균일 전착성을 갖고, 감소된 노쥴을 갖는 구리 침착물을 제공하는 구리 전기도금욕을 가능하게 한다.

METHOD OF ELECTROPLATING PHOTORESIST DEFINED FEATURES FROM COPPER ELECTROPLATING BATHS CONTAINING REACTION PRODUCTS OF ALPHA AMINO ACIDS AND BISEPOXDES

Electroplating contact ring with radially offset contact fingers

A contact ring for an electroprocessor has redundant contact fingers, i.e., more contact fingers than needed for contacting a very narrow edge exclusion zone on a substrate such as a semiconductor wafer. The contact fingers have slightly different lengths so that they extend to different radial positions. By providing redundant contact fingers, and by slightly varying the lengths of the contact fingers, a sufficient number of contact fingers make contact with the electrically conductive surface in the edge exclusion zone to provide good electroplating results.