PROCESSES AND APPARATUSES FOR MANUFACTURING WAFERS

The process for manufacturing wafers includes the steps of mounting an ingot as a work piece in a manner that permits rotation about a longitudinal axis of rotation and rotating the ingot about its longitudinal axis of rotation to permit a microwave device that generates an energized beam to penetrate an outer surface layer thereof. Furthermore, the process includes exfoliating the outer surface layer with the energized beam, removing the exfoliated outer surface layer from the ingot as a continuous planar strip and cutting the continuous planar strip into a wafer. 1. A process for manufacturing wafers , comprising the steps of:mounting an ingot as a work piece in a manner that permits rotation about a longitudinal axis of rotation;rotating said ingot about said longitudinal axis of rotation;energizing a microwave device for generating an energized beam sufficient for penetrating an outer surface layer of said rotating ingot;exfoliating said outer surface layer with said energized beam;removing said exfoliated outer surface layer from said ingot as a continuous planar strip; andcutting said continuous planar strip into a wafer.2. The process of claim 1 , wherein said removing step includes the step of transversely moving said continuous planar strip along a conveyor synchronized with said rotating ingot.3. The process of claim 1 , including the step of cooling said ingot at a penetration point where said energized beam bombards said outer surface layer of said ingot.4. The process of claim 3 , wherein said energized beam comprises an energy level between 0.3-1.7 megaelectron volts.5. The process of claim 1 , including the step of calibrating said microwave device to maximize a Q value.6. The process of claim 1 , wherein said microwave device comprises a klystron for generating said energized beam comprising a proton beam or an ion beam.7. The process of claim 1 , wherein said ingot comprises a cylinder carried by a rotatable shaft mountable to a rotor for rotating ...

TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES

Embodiments relate to use of a particle accelerator beam to form thin films of material from a bulk substrate. In particular embodiments, a bulk substrate (e.g. donor substrate) having a top surface is exposed to a beam of accelerated particles. In certain embodiments, this bulk substrate may comprise GaN; in other embodiments this bulk substrate may comprise Si, SiC, or other materials. Then, a thin film or wafer of material is separated from the bulk substrate by performing a controlled cleaving process along a cleave region formed by particles implanted from the beam. In certain embodiments this separated material is incorporated directly into an optoelectronic device, for example a GaN film cleaved from GaN bulk material. In some embodiments, this separated material may be employed as a template for further growth of semiconductor materials (e.g. GaN) that are useful for optoelectronic devices. 1. A method comprising:providing a GaN workpiece;introducing a plurality of particles into a surface of the GaN workpiece to form a cleave region in the GaN workpiece;bonding the surface of the GaN workpiece to a substrate;applying energy to cleave a detached thickness of GaN, from a remainder of the GaN workpiece; andprocessing the substrate bearing the detached thickness of GaN.2. A method as in wherein the substrate comprises a metal.3. A method as in wherein:the metal comprises a reflecting layer positioned between the detached thickness of GaN and a remainder of the substrate following the application of energy; andthe method further comprises processing the substrate to create a light emitting diode device.4. A method as in wherein the wherein the substrate comprises an integrated pattern including filler.5. A method as in wherein the integrated pattern includes electrically conductive islands.6. A method as in wherein the filler comprises silicon oxide and/or aluminum nitride.7. A method as in wherein the substrate comprises sapphire.8. A method as in wherein the ...

Plasma Modified Epitaxial Fabricated Graphene on SiC for Electrochemical Trace Detection of Explosives

An electrochemical cell includes a working electrode in contact with an aqueous electrolyte solution, a counter electrode in contact with the aqueous electrolyte solution, and a reference electrode in contact with the aqueous electrolyte solution. The working electrode comprises a plasma modified epitaxial synthesized graphene surface fabricated on SiC. 1. An electrochemical cell comprising:a working electrode in contact with an aqueous electrolyte solution;a counter electrode in contact with the aqueous electrolyte solution; anda reference electrode in contact with the aqueous electrolyte solution;wherein, the working electrode comprises a plasma modified epitaxial graphene surface synthesized from SiC.2. The electrochemical cell of claim 1 , wherein the graphene surface is approximately 1.6 mm.3. The electrochemical cell of claim 1 , further comprising a cell on top of the working electrode comprising an open-ended container and a gasket disposed between the container and the working electrode and configured to prevent leaks therebetween.4. The electrochemical cell of claim 3 , further comprising a base extending laterally outward from the electrodes below the cell and configured for clamping claim 3 , the broad base having a cut-out allowing access to the working electrode claim 3 , and wherein the reference and counter electrodes are suspended in an upper funnel-shaped well which also holds the electrolyte.5. The electrochemical cell of claim 1 , wherein the working electrode is a single layer claim 1 , non-flaky detection element.6. The electrochemical cell of claim 1 , wherein the working electrode comprises a surface atomic percentage of oxygen claim 1 , as measured by X-ray photoelectron spectroscopy claim 1 , of 10-15% O.7. The electrochemical cell of claim 6 , wherein the working electrode comprises a surface atomic percentage of oxygen claim 6 , as measured by X-ray photoelectron spectroscopy claim 6 , of 11.7% O.8. The electrochemical cell of claim 1 , ...

METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM TYPE THERMISTOR SENSOR

Provided are a metal nitride material for a thermistor, which has a high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. 1. A metal nitride material for a thermistor , consisting of a metal nitride represented by the general formula: (MA)AlN(where “M” represents at least one of Ti , V , Cr , Mn , Fe , and Co , “A” represents at least one of Sc , Zr , Mo , Nb , and W , 0.0 Подробнее

NITROGEN CONTAINING SINGLE CRYSTAL DIAMOND MATERIALS OPTIMIZED FOR MAGNETOMETRY APPLICATIONS

A single crystal diamond material comprising: neutral nitrogen-vacancy defects (NV); negatively charged nitrogen-vacancy defects (NV); and single substitutional nitrogen defects (N) which transfer their charge to the neutral nitrogen-vacancy defects (NV) to convert them into the negatively charged nitrogen-vacancy defects (NV), characterized in that the single crystal diamond material has a magnetometry figure of merit (FOM) of at least 2, wherein the magnetometry figure of merit is defined by (I) where R is a ratio of concentrations of negatively charged nitrogen-vacancy defects to neutral nitrogen-vacancy defects ([NV]/[NV]), [NV] is the concentration of negatively charged nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, [NV0] is a concentration of neutral nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, and T′ is a decoherence time of the NV defects, where T′ is T* for DC magnetometry or Tfor AC magnetometry. 1. A single crystal diamond material comprising:{'sup': '0', 'neutral nitrogen-vacancy defects (NV);'}{'sup': '−', 'negatively charged nitrogen-vacancy defects (NV); and'}{'sub': 's', 'sup': 0', '−, 'single substitutional nitrogen defects (N) which transfer their charge to the neutral nitrogen-vacancy defects (NV) to convert them into the negatively charged nitrogen-vacancy defects (NV),'} {'br': None, 'img': {'@id': 'CUSTOM-CHARACTER-00017', '@he': '3.22mm', '@wi': '2.12mm', '@file': 'US20210054526A1-20210225-P00001.TIF', '@alt': 'custom-character', '@img-content': 'character', '@img-format': 'tif'}, 'sup': '−', 'i': 'T', 'sub': '2', 'FOM=√{square root over ([NV]×′)}'}, 'characterized in that the single crystal diamond material has a magnetometry figure of merit (FOM) of at least 2, wherein the magnetometry figure of merit is defined by'}{'img': {'@id': 'CUSTOM-CHARACTER-00018', '@he': '3.22mm', '@wi': '2.12mm', '@file': 'US20210054526A1- ...

KIT OF PARTS COMPRISING A SYNTHETIC DIAMOND

Kit of parts comprising a synthetic diamond (), which is accompanied by a slice () that was cut off the same original synthetic diamond (), whereby both the slice () and the synthetic diamond ) are engraved with an identical identification or with an identification which shows that the synthetic diamond () and the slice () belong together. The kit also comprises an accompanying numbered certificate () of authenticity, which refers to the identical identification engraved on the synthetic diamond () and the slice (). The identical identification engraved on the synthetic diamond () and the slice () comprises the number of the accompanying certificate () of authenticity or refers to it. 1. Use of a laser to cut a slice of a synthetic diamond and to engrave both the slice and a remaining part the synthetic diamond , wherein that both the slice and the remaining part are engraved with a birthday of the synthetic diamond and with a number of a certificate of authenticity , and in that the engraved slice of the synthetic diamond is incorporated in the certificate of authenticity under a transparent window in the certificate of authenticity , and in that the number of the certificate of authenticity is engraved on a final cut diamond , derived from the remaining part of the synthetic diamond , such that it is clear that the engraved slice and the final cut diamond belong together.2. The use of the laser according to claim 1 , wherein both the slice and the remaining part are engraved with additional information.3. The use of the laser according to claim 2 , wherein the additional information comprises a brand logo of the synthetic diamond.4. The use of the laser according to claim 2 , wherein the additional information comprises a personal message.5. The use of the laser according to claim 1 , wherein the number of the certificate of authenticity is engraved on a girdle of the final cut diamond.6. The use of the laser according to claim 1 , wherein all desired information ...

SYNTHETIC DIAMOND LABELLING AND IDENTIFICATION SYSTEM AND METHOD

A synthetic diamond labelling and identification method comprising the steps of selecting a synthetic diamond with between 200 and 600 parts per billion of an isolated substitution Nitrogen atoms within its lattice structure, irradiating the selected synthetic diamond with a beam energy that is equal to at least one-half the height of the selected diamond, maintaining the temperature of the selected diamond below 500 degrees Celsius while it is being irradiated, annealing the irradiated selected diamond as to create a plurality of nitrogen-vacancy centers without changing the original color of the selected diamond, and generating a bulk luminesces visible to the naked eye by exciting the plurality of created nitrogen-vacancies with an ultraviolet lamp. 1. A synthetic diamond labelling and identification method comprising the steps:selecting a synthetic diamond with between 200 and 600 parts per billion of an isolated substitution Nitrogen atoms within its lattice structure;irradiating the selected synthetic diamond with a beam energy that is equal to at least one-half the height of the selected diamond;maintaining the temperature of the selected diamond below 500 degrees Celsius while it is being irradiated;annealing the irradiated selected diamond as to create a plurality of nitrogen-vacancy centers without changing the original color of the selected diamond; andgenerating a bulk luminesces visible to the naked eye by exciting the plurality of created nitrogen-vacancies with an ultraviolet lamp.2. The synthetic diamond labelling and identification method of wherein the annealing step is done in a vacuum at 900 degrees for a duration between 10 and 15 minutes.3. The synthetic diamond labelling and identification method of wherein the annealing step is done in hydrogen at 1800 degrees for a duration between 2 to 6 minutes.4. The synthetic diamond labelling and identification method of wherein the duration of the irradiation corresponds to the beam strength and the ...

FLUORESCENT DIAMOND PARTICLES AND METHODS OF FABRICATING THE SAME

A diamond powder comprising diamond particles having an average particle size of no more than 20 μm and a vacancy or impurity-vacancy point defect concentration of at least 1 ppm. At least 70% of the volume of diamond in the powder is formed from a single crystal growth sector. This leads to a substantially uniform concentration of vacancies or impurity-vacancy point defects in the diamond particles because the rate of impurity take-up during growth is heavily dependent on the growth sector, which in turn leads to a more uniform fluorescent response. There is also described a method for making such a powder. 1. A diamond powder comprising diamond particles having an average particle size of no more than 20 μm and a vacancy or impurity-vacancy point defect concentration of at least 1 ppm , wherein at least 70% of the volume of diamond in the powder is formed from a single crystal growth sector.2. The diamond powder according to claim 1 , wherein the growth sector is selected from one of a {100} growth sector and a {111} growth sector.3. The diamond powder according to claim 1 , wherein the diamond particles are crushed from precursor diamond particles.4. The diamond powder according to claim 1 , wherein the vacancy or impurity-vacancy point defect concentration is selected from any one of at least: 5 ppm; 10 ppm; 20 ppm; 50 ppm; or 100 ppm.5. The diamond powder according to claim 1 , wherein the impurity-vacancy point defects are selected from any of nitrogen-vacancy point defects and silicon-vacancy point defects.6. The diamond powder according to claim 1 , wherein the particles in the powder have an average vacancy or impurity-vacancy point defect concentration claim 1 , and a variation about the average vacancy or impurity-vacancy point defect concentration is selected from any one of no more than: 50%; 40%; 30%; 20% or 10%.7. The diamond powder according to claim 1 , wherein the average particle size of the diamond particles is selected from any of no more than ...

HIGHLY FLUORESCENT DIAMOND PARTICLES AND METHODS OF FABRICATING THE SAME

A method of fabricating fluorescent diamond particles, and diamond particles fabricated by the method. The method comprises mounting a diamond body on a heat sink, the diamond body comprising a plurality of diamond particles having a particle size of no more than 250 micrometres and bound together in the diamond body by a binder. The diamond body is irradiated to generate vacancy defects in the diamond particles. The binder is then removed to separate the diamond body into diamond particles. 1. A method of fabricating fluorescent diamond particles , the method comprising:mounting a diamond body on a heat sink, the diamond body comprising a plurality of diamond particles having a particle size of no more than 250 micrometres and bound together in the diamond body by an organic polymer binder;irradiating the diamond body to generate vacancy defects in the diamond particles; andremoving the binder to separate the diamond body into diamond particles.2. (canceled)3. The method according to claim 1 , wherein the diamond body is in the form of a sheet of diamond paper.4. The method according to claim 1 , wherein the diamond body has a thickness of no more than: 3 mm; 2 mm; 1 mm; 500 micrometres; 250 microns; or 100 microns.5. The method according to claim 1 , wherein the particle size of the diamond particles is selected from any one of no more than: 100 micrometres; 1 micrometre; 500 nanometres; or 200 nanometres.6. The method according to claim 1 , wherein the particle size of the diamond particles is selected from any one of no less than: 10 nanometres; 20 nanometres; 30 nanometres; or 40 nanometres.7. The method according to claim 1 , wherein the diamond particles have a size distribution selected from any one of no more than: 10 micrometres; 1 micrometre; 500 nanometres; 200 nanometres; 100 nanometres; 50 nanometres; or 10 nanometres.8. The method according to claim 1 , wherein the diamond particles have a nitrogen or silicon concentration selected from any one of at ...

METHOD FOR DEPOSITING HIGH QUALITY PVD FILMS

Embodiments described herein include a method for depositing a material layer on a substrate while controlling a bow of the substrate and a surface roughness of the material layer. A bias applied to the substrate while the material layer is deposited is adjusted to control the bow of the substrate. A bombardment process is performed on the material layer to improve the surface roughness of the material layer. The bias and bombardment process improve a uniformity of the material layer and reduce an occurrence of the material layer cracking due to the bow of the substrate. 1. A method for depositing a compound nitride material on a substrate , the method comprising:depositing a material layer on a substrate; andadjusting a bias applied to the substrate while the depositing the material layer, the bias controlling a bow of the substrate.2. The method of claim 1 , wherein a pressure of the depositing the material layer is between about 2 mTorr and about 6 mTorr.3. The method of claim 1 , wherein the bias applied to the substrate is between about 40 watts and about 100 watts.4. The method of claim 1 , wherein a thickness of the material layer is between about 100 nanometers and about 2500 nanometers.5. The method of claim 1 , wherein a power used for the depositing the material layer is between about 4 kW and about 10 kW.6. The method of claim 1 , wherein the bias applied to the substrate is between about 40 watts and about 80 watts claim 1 , and wherein the bias is used to reduce a bow profile of the substrate.7. The method of claim 1 , wherein adjusting the bias comprises:applying a first bias while depositing a first portion of the material layer; andapplying a second bias while depositing a second portion of the material layer, wherein the first bias is different than the second bias.8. The method of claim 1 , wherein the material layer comprises aluminum nitride.9. The method of claim 8 , wherein the material layer further comprises scandium in a concentration ...

POST-SYNTHESIS PROCESSING OF DIAMOND AND RELATED SUPER-HARD MATERIALS

A method of processing a super-hard material having a Vickers hardness of no less than 2000 kg/mm2, the method comprising: (a) forming a surface of the super-hard material to have a first surface profile within a first root mean square deviation being no more than 5 μm; (b) analysing said surface of the super-hard material to detect a plurality of protruding regions on said surface; and (c) selectively processing over only the protruding regions on the surface of the super-hard material to form a second surface profile within a second root mean square deviation from the smooth target surface profile, said second root mean square deviation being no more than 100 nm. 1. A method of processing a super-hard material having a Vickers hardness of no less than 2000 kg/mm , the method comprising:(a) forming a surface of the super-hard material to have a first surface profile within a first root mean square deviation from a smooth target surface profile, said first root mean square deviation being no more than 5 □m;(b) analysing said surface of the super-hard material to detect a plurality of protruding regions on said surface; and(c) selectively processing over only the protruding regions on the surface of the super-hard material to form a second surface profile within a second root mean square deviation from the smooth target surface profile, said second root mean square deviation being no more than 100 nm.2. A method according to claim 1 ,wherein the first root mean square deviation is no more than 3 μm, 1 μm, 500 nm, 100 nm, 50 nm, 20 nm, or 10 nm.3. A method according to claim 1 ,wherein the first root mean square deviation is no less than 5 nm, 10 nm, or 15 nm.4. A method according to claim 1 ,wherein the second root mean square deviation is no more than 60 nm, 40 nm, 20 nm, 15 nm, 10 nm, or 5 nm.5. A method according to claim 1 ,{'sub': 'a', 'wherein, after processing, the surface of the super-hard material has a surface roughness Rof no more than 20 nm, 15 nm, 10 nm, ...

HIGH-RESISTIVITY SINGLE CRYSTAL ZINC OXIDE WAFER BASED RADIATION DETECTOR AND PREPARATION METHOD AND USE THEREOF

The present invention discloses a high-resistivity single crystal zinc oxide (ZnO) wafer and a high-resistivity single crystal ZnO-based radiation detector, and preparation method and use thereof. The preparation method of the high-resistivity single crystal zinc oxide wafer is to place a single crystal ZnO wafer in a metal lithium electrochemical device for a constant-current discharge treatment, and then to place the single crystal ZnO wafer in a high-pressure oxygen atmosphere at 800 to 1000° C. and 10 to 30 atm for an annealing treatment for 20 to 28 hours. The preparation method of the radiation detector is to evaporate a metal electrode layer at both sides of the high-resistivity single crystal ZnO wafer, then to bond the wafer onto a circuit board, and to connect the wafer with the circuit board by a gold thread. 1. A preparation method of high-resistivity single crystal zinc oxide , wherein the preparation method comprises following steps:S1) placing a single crystal ZnO wafer in a metal lithium electrochemical device, for a constant-current discharge treatment; andS2) placing a ZnO single crystal treated in the step S1 in an oxygen atmosphere at 600 to 1000° C. and 5 to 30 atm for an annealing treatment for 10 to 28 hours to obtain a high-resistivity ZnO single crystal wafer.2. The preparation method according to claim 1 , wherein an electrolyte in the metal lithium electrochemical device mentioned in the step S1 is a 0.5 to 1.5M LiPFsolution dispersed in a mixed solution of ethylene carbonate claim 1 , ethyl methyl carbonate and diethyl carbonate in a volume ratio of 2 to 5:2 to 4:2 to 4 claim 1 , and a polyethylene microporous membrane is used as an electronic diaphragm.3. The preparation method according to claim 1 , wherein the metal lithium electrochemical device mentioned in the step S1 is a lithium battery shell.4. The preparation method according to claim 1 , wherein a means of placing the single crystal ZnO wafer in the metal lithium ...

Laser Writing for Colour Centres in Crystals

A method of fabricating one or more colour centres in a crystal is described. The method comprises focusing a laser into a crystal to induce the creation, modification, or diffusion of defects within a focal region of the laser. Fluorescence detection is used to determine when one or more colour centres are formed within the focal region and the laser is terminated when a desired number of colour centres have been formed. The method enables colour centres to be formed in a crystal with a high degree of control in terms of both the number and location of colour centres within the crystal, and a degree of control over other parameters such as colour centre orientation and local environment. In particular, it is possible to form a well-defined pattern of colour centres within a crystal. 1. A crystal comprising:a crystal lattice; anda plurality of colour centres disposed within the crystal lattice,wherein the colour centres are configured to map onto a pattern of points having defined locations, within the crystal lattice, andwherein the colour centres have a maximum deviation from the defined locations of no more than 1 micrometre in a two-dimensional projection of the pattern of points.2. The crystal according to claim 1 ,wherein the maximum deviation of the colour centres in the two-dimensional projection of the pattern of points is no more than one of: 750 nm; 500 nm; 300 nm; 200 nm; 150 nm; 100 nm; 80 nm; 50 nm; and 20 nm.3. The crystal according to claim 1 ,wherein the colour centres have a maximum deviation from the defined locations in a depth direction orthogonal to the two-dimensional projection of no more than one of: 4 micrometres; 2 micrometres; 1 micrometre; 750 nm; 500 nm; 300 nm; 200 nm; 150 nm; 100 nm; or 50 nm.4. The crystal according to claim 1 ,wherein only a single colour centre is disposed at least at 55%, 60%, 70%, 80%, 90%, or 100% of the points of the pattern within said maximum deviation.5. The crystal according to claim 1 ,wherein a ...

METHOD FOR TRAPPING VACANCIES IN A CRYSTAL LATTICE

There is provided a method of fabricating a trapped vacancy in a crystal lattice of a target comprising: positioning the target in a laser system, the target containing vacancy trapping elements within the crystal lattice; modifying the crystal lattice within the target by using a laser to generate a lattice vacancy; and annealing the target to cause the lattice vacancy to migrate and be captured by a vacancy trapping element to form the trapped vacancy in the crystal lattice. 1. A method of fabricating a trapped vacancy in a crystal lattice of a target comprising: modifying the crystal lattice within the target by using a laser to generate a lattice vacancy; and', 'annealing the target to cause the lattice vacancy to migrate and be captured by a vacancy trapping element to form the trapped vacancy in the crystal lattice., 'positioning the target in a laser system, the target containing vacancy trapping elements within the crystal lattice;'}2. The method of wherein modification of the crystal lattice comprises nonlinear multi-photon absorption by the crystal lattice.3. The method of wherein the laser is operated at a central wavelength such that the energy of an absorbed photon is less than a bandgap of the target.4. The method of wherein a pulse energy of the laser entering the target is between 5 nJ and 15 nJ; preferably wherein the pulse energy is between 9 nJ and 14 nJ; more preferably wherein the pulse energy is between 10 nJ and 12 nJ.5. The method of wherein the vacancy trapping elements are present at a concentration of less than 1 part per million; preferably wherein the vacancy trapping elements are present at a concentration of less than 5 parts per billion.6. The method of wherein the vacancy trapping element is nitrogen; or wherein the vacancy trapping element is silicon; or wherein the vacancy trapping element is germanium.7. The method of wherein the vacancy trapping elements are deposited during fabrication of the target; preferably wherein the ...

METHOD OF PRODUCING SUBSTANCE

A method of producing a substance includes a producing step of producing a new substance by, in a state in which a raw material absorbing giant pulse laser light is disposed inside a base material or in a state in which the base material and the raw material are brought into contact with each other and are clamped together, performing irradiation with the giant pulse laser light such that the raw material absorbs the giant pulse laser light and thereby generating shock waves such that at least the raw material undergoes phase transition. 1. A method of producing a substance comprising:a producing step of producing a new substance by, in a state in which a raw material absorbing giant pulse laser light is disposed inside a base material or in a state in which the base material and the raw material are brought into contact with each other and are clamped together, performing irradiation with the giant pulse laser light such that the raw material absorbs the giant pulse laser light and thereby generating shock waves such that at least the raw material undergoes phase transition.2. The method of producing a substance according to claim 1 ,wherein the base material is formed of a transparent material transparent with respect to the giant pulse laser light,wherein the raw material is a defect disposed inside the transparent material, andwherein in the producing step, the substance as the transparent material is produced by performing irradiation with the giant pulse laser light such that the defect absorbs the giant pulse laser light and thereby generating shock waves such that the defect undergoes phase transition and recrystallization.3. The method of producing a substance according to claim 1 ,wherein the base material and the raw material have a thin film shape, andwherein in the producing step, a laminate is formed by alternately laminating the base material and the raw material, the laminate is clamped in a lamination direction thereof, and the substance transparent ...

METHOD OF MARKING MATERIAL AND SYSTEM THEREFORE, AND MATERIAL MARKED ACCORDING TO SAME METHOD

A method of forming one or more protrusions on an outer surface of a polished face of a solid state material, said method including the step of applying focused inert gas ion beam local irradiation towards an outer surface of a polished facet of a solid state material in a way of protruding top surface material; wherein irradiated focused inert gas ions from said focused inert gas ion bean penetrate the outer surface of said polished facet of said solid state material; and wherein irradiated focused inert gas ions cause expansive strain within the solid state crystal lattice of the solid state material below said outer surface at a pressure so as to induce expansion of solid state crystal lattice, and form a protrusion on the outer surface of the polished face of said solid state material. 1. A method of forming one or more protrusions on an outer surface of a polished facet of a solid state material , said method including the step of: wherein irradiated focused inert gas ions from said focused inert gas ion beam penetrate the outer surface of said polished facet of said solid state material; and', 'wherein irradiated focused inert gas ions cause expansive strain within the solid state crystal lattice of the solid state material below said outer surface at a pressure so as to induce expansion of solid state crystal lattice, and form a protrusion on the outer surface of the polished facet of said solid state material., '(i) applying focused inert gas ion beam local irradiation towards an outer surface of a polished facet of a solid state material in a way of protruding top surface material;'}2. A method of forming one or more protrusions according to claim 1 , wherein said focused inert gas ion beam has a beam energy in the range of from 5 keV to 50 keV and probe current in the range of 1 fA to 200 pA.3. A method of forming one or more protrusions according to claim 1 , wherein the solid state crystal lattice is in a form of a single crystalline claim 1 , poly- ...

METHOD FOR PROCESSING ELECTRONIC COMPONENTS BY A SUPERCRITICAL FLUID

A method for processing an electronic component using a supercritical fluid includes introducing the supercritical fluid into a cavity. The supercritical fluid is doped with a hydrogen isotope-labeled compound, an organic metal compound, an element selecting from a halogen element, oxygen, sulfur, selenium, phosphorus or arsenic, or a compound containing the element. An electronic component in the cavity is modified by the supercritical fluid at a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid. 1. A method for processing an electronic component using a supercritical fluid , comprising:introducing a supercritical fluid into a cavity, wherein the supercritical fluid is doped with a hydrogen isotope-labeled compound; andmodifying an electronic component in the cavity by the supercritical fluid at a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.2. The method for processing the electronic component using the supercritical fluid as claimed in claim 1 , wherein the hydrogen isotope-labeled compound is a protium-labeled compound or a deuterium-labeled compound.3. The method for processing the electronic component using the supercritical fluid as claimed in claim 1 , wherein the hydrogen isotope-labeled compound is selected from the group consisting of LiH claim 1 , NaH claim 1 , KH claim 1 , CaH claim 1 , MgH claim 1 , BeH claim 1 , PH claim 1 , BH claim 1 , CH claim 1 , HF claim 1 , AsH claim 1 , NH claim 1 , AlH claim 1 , HS claim 1 , HSe claim 1 , HCl claim 1 , HBr claim 1 , HI claim 1 , NHCl and CO(NH).4. The method for processing the electronic component using the supercritical fluid as claimed in claim 1 , further comprising introducing an electromagnetic wave into the cavity claim 1 , wherein the electronic component is modified by the supercritical fluid together with the electromagnetic ...

WAFER PRODUCTION METHOD

A wafer production method for producing a wafer from a lithium tantalate ingot includes a step of irradiating, from an end face of a lithium tantalate ingot which is a 42-degree rotation Y cut ingot having an orientation flat formed in parallel to a Y axis, a laser beam of a wavelength having transparency to lithium tantalate with a focal point of the laser beam positioned in the inside of the ingot to form a modified layer in the inside of the ingot while the ingot is fed for processing, and a step of applying external force to the ingot to peel off a plate-shaped material from the ingot to produce a wafer. At the step of forming a modified layer, the ingot is relatively fed for processing in a direction parallel or perpendicular to the orientation flat. 1. A wafer production method for producing a wafer from a lithium tantalate ingot which is a 42-degree rotation Y cut ingot having an end face extending perpendicularly with respect to a center axis set with a rotational angle of 42 degrees with respect to a Y axis orthogonal to a crystal axis of a lithium tantalite and having an orientation flat formed in parallel to the Y axis , comprising:a modified layer formation step of irradiating a laser beam of a wavelength having transparency to lithium tantalate with a focal point of the laser beam positioned at a depth corresponding to a thickness of a wafer to be produced from the end face of the lithium tantalate ingot to form a modified layer in the inside of the lithium tantalate ingot while the lithium tantalate ingot is fed for processing relative to the laser beam; anda wafer production step of applying, after the modified layer formation step is carried out, external force to the lithium tantalate ingot to peel off a plate-shaped material from the lithium tantalate ingot to produce a wafer,wherein, when a modified layer is formed in the inside of the lithium tantalate ingot at the modified layer formation step, the lithium tantalate ingot is relatively fed for ...

DIAMOND COMPOSITE BODY, SUBSTRATE, DIAMOND, TOOL INCLUDING DIAMOND, AND METHOD FOR MANUFACTURING DIAMOND

Provided are a diamond composite body capable of shortening a separation time for separating a substrate and a diamond layer, the substrate, and a method for manufacturing a diamond, as well as a diamond obtained from the diamond composite body and a tool including the diamond. The diamond composite body includes a substrate including a diamond seed crystal and having grooves in a main surface, a diamond layer formed on the main surface of the substrate, and a non-diamond layer formed on a substrate side at a constant depth from an interface between the substrate and the diamond layer. 1. A diamond composite body , comprising:a substrate including a diamond seed crystal and having grooves in a main surface;a single crystal diamond layer formed on the main surface of the substrate, the single crystal diamond layer being integrally present to cover an upper surface of each groove; anda non-diamond layer formed on a substrate side at a constant depth from an interface between the substrate and the single crystal diamond layer.2. The diamond composite body according to claim 1 , wherein the main surface of the substrate has an off angle of more than or equal to 0° and less than or equal to 15° with respect to a (001) plane claim 1 , andthe grooves in the main surface of the substrate are substantially parallel to a <100> direction.3. The diamond composite body according to claim 1 , wherein the grooves in the main surface of the substrate have a width W of more than or equal to 0.1 μm and less than or equal to 30 μm.4. The diamond composite body according to claim 1 , wherein a value of a ratio D/W between a width W and a depth D of the grooves in the main surface of the substrate is more than or equal to 3 and less than or equal to 50.5. The diamond composite body according to claim 2 , wherein the main surface of the substrate further has grooves intersecting with the grooves which are substantially parallel to the <100> direction.6. (canceled)7. (canceled)8. A ...

SYSTEMS AND METHODS FOR TOP-DOWN FABRICATION OF WAFER SCALE TMDC MONOLAYERS

A method of forming a TMDC monolayer comprises providing a multi-layer transition metal dichalcogenide (TMDC) film. The multi-layer TMDC film comprises a plurality of layers of the TMDC. The multi-layer TMDC film is positioned on a conducting substrate. The conducting substrate is contacted with an electrolyte solution. A predetermined electrode potential is applied on the conducting substrate and the TMDC monolayer for a predetermined time. A portion of the plurality of layers of the TMDC included in the multi-layer TMDC film is removed by application of the predetermined electrode potential, thereby leaving a TMDC monolayer film positioned on the conducting substrate. 1. A method of forming a TMDC monolayer , comprising:providing a multi-layer transition metal dichalcogenide (TMDC) film, the multi-layer TMDC film comprising a plurality of layers of the TMDC;positioning the multi-layer TMDC film on a conducting substrate;contacting the conducting substrate and the multi-layer TMDC film with an electrolyte solution;applying a predetermined electrode potential on the conducting substrate for a predetermined time; andremoving, by application of the predetermined electrode potential, a portion of the plurality of layers of the TMDC included in the multi-layer TMDC film, thereby leaving a TMDC monolayer film positioned on the conducting substrate.2. The method of forming a TMDC monolayer of claim 1 , wherein the TMDC comprises molybdenum disulfide claim 1 , tungsten disulfide claim 1 , tungsten diselenide or molybdenum ditelluride.3. The method of forming a TMDC monolayer of claim 2 , wherein the conducting substrate comprises titanium nitride.4. The method of forming a TMDC monolayer of claim 1 , wherein the electrolyte solution comprises an alkali metal salt.5. The method of forming a TMDC monolayer of claim 4 , wherein the alkali metal salt comprises at least one of lithium chloride claim 4 , lithium nitride claim 4 , sodium chloride and potassium chloride.6. The ...

DIAMOND SMOOTHING METHOD

A diamond smoothing method of irradiating a laser light onto a raised and recessed surface of a diamond, so as to smooth the raised and recessed surface, by ablation that is caused to occur in the diamond by irradiation of the laser light onto the raised and recessed surface. The method includes: a threshold-energy-density detecting step of irradiating the laser light onto the raised and recessed surface, and changing an irradiation energy density of the laser light, so as to detect a threshold energy density as a lower threshold value of the irradiation energy density that causes the ablation to occur; and a smoothing processing step of executing a smoothing processing by irradiating the laser light onto the raised and recessed surface with a smoothing irradiation energy density that is set to be within a range from 1 to 15 times as large as the threshold energy density. 1. A diamond smoothing method of irradiating a laser light onto a raised and recessed surface of a diamond , so as to smooth the raised and recessed surface , by ablation that is caused to occur in the diamond by irradiation of the laser light onto the raised and recessed surface ,the diamond smoothing method comprising:a threshold-energy-density detecting step of irradiating the laser light onto the raised and recessed surface, and changing an irradiation energy density of the laser light, so as to detect a threshold energy density as a lower threshold value of the irradiation energy density that causes the ablation to occur; anda smoothing processing step of executing a smoothing processing by irradiating the laser light onto the raised and recessed surface with a smoothing irradiation energy density that is set to be within a range from 1 to 15 times as large as the threshold energy density,wherein, at the smoothing processing step, the smoothing processing is executed such that a sum of a polished amount of the diamond from bottoms of recessed portions of the raised and recessed surface and a ...

WAFER PRODUCING METHOD

Disclosed herein is a wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot. The wafer producing method includes a modified layer forming step of setting the focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the upper surface of the ingot, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam to the upper surface of the ingot as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the upper surface of the ingot and cracks extending from the modified layer. In the modified layer forming step, the focal point of the laser beam is relatively moved from a radially inside position inside the ingot toward the outer circumference of the ingot. 1. A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot having a first surface , a second surface opposite to the first surface , a c-axis extending from the first surface to the second surface , and a c-plane perpendicular to the c-axis , the wafer producing method comprising:a separation start point forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the first surface, which depth corresponds to a thickness of the wafer to be produced, and next applying the laser beam to the first surface as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point; anda wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from the ingot; a ...

METHOD OF PRODUCING PERIODIC POLARIZATION INVERSION STRUCTURES

It is provided first electrode piece part-arrays each comprising a plurality of electrode piece parts on a first main face of a ferroelectric crystal substrate. A voltage is applied on the first electrode piece part-arrays to form first periodic polarization inversion structures. It is provided second electrode piece part-arrays each comprising a plurality of electrode piece parts between the adjacent plural first periodic polarization inversion structures. A voltage is applied on the second electrode piece part-arrays to form second polarization inversion structures. 1. A method of producing periodic polarization inversion structures in a ferroelectric crystal substrate having a first main face and a second main face , the method comprising the steps of:providing first electrode piece part-arrays each comprising a plurality of electrode piece parts on said first main face of said ferroelectric crystal substrate;forming first periodic polarization inversion structures by applying a voltage on said first electrode piece part-arrays;providing second electrode piece part-arrays each comprising a plurality of electrode piece parts, between a plurality of said first periodic polarization inversion structures adjacent to each other; andforming second periodic polarization inversion structures by applying a voltage on said second electrode piece part-arrays,wherein an end of each of said first periodic polarization inversion structures is set apart from an end of each of said second electrode piece part-arrays by 1 mm or larger and 5 mm or smaller, in a lengthwise direction of said second electrode piece part-arrays.2. The method of claim 1 , further comprising the steps of:forming insulating films between said electrode piece parts, respectively, on said first main face of said ferroelectric crystal substrate;providing a uniform electrode on said second main face of said ferroelectric crystal substrate; andapplying said voltage between said electrode piece parts and said ...

SYNTHETIC SINGLE CRYSTAL DIAMOND

Provided is a synthetic single crystal diamond containing nitrogen atoms at a concentration of more than 600 ppm and 1500 ppm or less. The Raman shift λ′ (cm) of a peak in a primary Raman scattering spectrum of the synthetic single crystal diamond and the Raman shift λ (cm) of a peak in a primary Raman scattering spectrum of a synthetic type IIa single crystal diamond containing nitrogen atoms at a content of 1 ppm or less satisfy the following expression (1): 1. A synthetic single crystal diamond containing nitrogen atoms at a concentration of more than 600 ppm and 1500 ppm or less ,{'sup': −1', '−1, 'claim-text': {'br': None, 'λ′−λ≥−0.10\u2003\u2003(1).'}, 'the Raman shift λ′ (cm) of a peak in a primary Raman scattering spectrum of the synthetic single crystal diamond and the Raman shift λ (cm) of a peak in a primary Raman scattering spectrum of a synthetic type IIa single crystal diamond containing nitrogen atoms at a content of 1 ppm or less satisfying the following expression (1)2. The synthetic single crystal diamond according to claim 1 , wherein the synthetic single crystal diamond has a cracking load of 10 N or more in a breaking strength test in which a spherical diamond indenter having a tip radius of 50 μm is pressed against a surface of the synthetic single crystal diamond at a loading speed of 100 N/min.3. The synthetic single crystal diamond according to claim 1 , wherein the synthetic single crystal diamond has a Knoop hardness of 95 GPa or more in a <100> direction on a {001} plane. The present disclosure relates to a synthetic single crystal diamond. The present application claims the benefit of priority to Japanese Patent Application No. 2017-203412 filed on Oct. 20, 2017, the entire contents of which are incorporated herein by reference.Since single crystal diamond has high hardness, it has been widely used in tools such as cutting tools, grinding tools, and anti-wear tools. Single crystal diamond used in tools includes natural diamond and ...

APPARATUS AND METHOD OF CLEAVING THIN LAYER FROM BULK MATERIAL

Embodiments relate to use of a particle accelerator beam to form thin layers of material from a bulk substrate. In particular embodiments, a bulk substrate (e.g. donor substrate) having a top surface is exposed to a beam of accelerated particles. In certain embodiments, this bulk substrate may comprise a core of crystalline sapphire (AlO) material. Then, a thin layer of the material is separated from the bulk substrate by performing a controlled cleaving process along a cleave region formed by particles implanted from the beam. Embodiments may find particular use as hard, scratch-resistant covers for personal electric device displays, or as optical surfaces for fingerprint, eye, or other biometric scanning. 1. An apparatus comprising a cleaved single crystal sapphire layer having a thickness of between about 5 μm to about 100 μm.2. An apparatus as in further comprising a laminated structure including an optical blank and an index matching material positioned between the cleaved single crystal sapphire layer and the optical blank.3. An apparatus as in wherein the cleaved single crystal sapphire layer is free standing.4. An apparatus as in wherein the optical blank and index matching material comprise a support.5. An apparatus as in wherein:the index matching material comprises an index-matching fluid; andthe optical blank comprises quartz.6. An apparatus as in wherein an index of refraction of the index-matching fluid results in an internal reflection at the quartz/sapphire interface of less than 1%.7. An apparatus as in wherein:an index of refraction of the index-matching fluid results in an internal reflection at the quartz/sapphire interface of greater than 1%; andthe index matching material further comprises a dielectric stack matching material.8. An apparatus as in wherein a surface of the cleaved single crystal sapphire layer is defined by a fracture plane resulting from hydrogen implantation.9. An apparatus as in wherein a Total Thickness Variation (TTV) of ...

DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE CONTAINING GALLIUM NITRIDE AND METHOD FOR PRODUCING THE SAME

A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05° to 15° inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 MΩ·cm or more on the surface of the irregular portion is 10° or less. 1. A device comprising:a semiconductor substrate that contains gallium nitride and has a crystal face inclined from 0.05° to 15° inclusive with respect to a c-plane, wherein:the semiconductor substrate includes an irregular portion on the crystal face, anda contact angle of pure water having a specific resistance of 18 MΩ·cm or more on a surface of the irregular portion is 10° or less.2. The device according to claim 1 ,wherein a mean width of roughness profile elements of the crystal face is from 0.8 μm to 1,000 μm inclusive.3. The device according to claim 1 ,wherein the crystal face has an arithmetic mean roughness of from 10 nm to 800 nm inclusive.4. The device according to claim 1 ,wherein the crystal face is inclined 0.4° with respect to the c-plane.5. The device according to claim 1 ,wherein the semiconductor substrate is a GaN substrate.6. A method for producing a device claim 1 , the method comprising:preparing a semiconductor substrate containing gallium nitride and having a crystal face inclined with respect to a c-plane;forming an irregular portion on the crystal face by subjecting at least part of the crystal face to dry etching; andmodifying a surface of the irregular portion.7. The method for producing a device according to claim 6 ,wherein the modifying the surface of the irregular portion includesirradiating the at least part of the crystal face with ultraviolet light with the at least part of the crystal face exposed to a gas containing oxygen atoms or oxygen molecules, or a liquid containing oxygen atoms or oxygen molecules.8. The method for producing a device according ...

SYNTHETIC SINGLE CRYSTAL DIAMOND, TOOL AND METHOD OF PRODUCING SYNTHETIC SINGLE CRYSTAL DIAMOND

A synthetic single crystal diamond contains nitrogen atoms at a concentration of more than 600 ppm and 1500 ppm or less, and the nitrogen atoms do not include any isolated substitutional nitrogen atom. 1. A synthetic single crystal diamond containing nitrogen atoms at a concentration of more than 600 ppm and 1500 ppm or less ,the nitrogen atoms including no isolated substituted nitrogen atom.2. A synthetic single crystal diamond containing nitrogen atoms at a concentration of more than 600 ppm and 1500 ppm or less ,{'sup': '−1', 'an absorption peak derived from isolated substitutional nitrogen atoms being absent in the wave number range of 1130±2 cmin an infrared absorption spectrum measured by Fourier transform infrared spectroscopy.'}3. The synthetic single crystal diamond according to claim 1 , wherein the synthetic single crystal diamond has a cracking load of 12 N or more in a breaking strength test in which a spherical diamond indenter having a tip radius of 50 μm is pressed against a surface of the synthetic single crystal diamond at a loading speed of 100 N/min.4. The synthetic single crystal diamond according to claim 1 , wherein the synthetic single crystal diamond has a Knoop hardness of 100 GPa or more in a <100> direction on a {001} plane.5. A tool including the synthetic single crystal diamond according to .6. A method of producing a synthetic single crystal diamond comprising:obtaining a diamond single crystal containing nitrogen atoms at a concentration of more than 600 ppm and 1500 ppm or less by a temperature difference process using a solvent metal;irradiating the diamond single crystal with one or both of an electron beam and a particle beam so as to apply an energy of 100 MGy or more and 1000 MGy or less to the diamond single crystal; andannealing the irradiated diamond single crystal at a temperature of 1700° C. or higher and 1800° C. or lower under normal pressure.7. The synthetic single crystal diamond according to claim 2 , wherein the ...

Permanent magnet and method of making permanent magnet

A method includes mixing first and second alloys to form a mixture, pressing the mixture within a first magnetic field to form a magnet having anisotropic particles of the first alloy aligned with a magnetic moment of the magnet, and heat treating the magnet within a second magnetic field to form elongated grains from the second alloy and align the elongated grains with the moment.

Synthetic prodn. of diamond and borazon - by polymerising graphite or hexagonal boron nitride crystals in electromagnetic field at room temp. and atmos. pressure using Lewis acid as initiator

Synthetically producing microcrystalline diamond and borazone single crystals from graphite and hexagonal beam nitride consists of polymerising the starting material at room temp. and atmospheric pressure using an external electrostatic field. The polymerisation is carried out cationically using a lewis acid as initiator whose van der wools radius is 0.13-0.22 nm. The pref. initiator is iodine in a 5 wt.% petroleum ether solution. Pref. the crystal of graphite or beam nitride (9) are placed between two electrically insulated condenser plates(7) so that their planes are parallel to the plate surfaces. The electrostatic field component (E) perpendicular to the crystal plane in the direction of the anode mist fulfil conditions (I) 8.0mv/cm greater than E and F(p,t) greater than (A,Go(T) = (V2(T)-V,(T) (P-Po)) F*(S,(T)+S2(T))) = 2.3 Mr/cm where p is reaction pressure, T reaction temp. A,Go (I) free standard reaction enthalpy to change the crystal modification; Vi mol. vol. of graphite or boron nitride, V2 mol. vol. of diamond or borazone; Po standard pressure of 101.325Pa, F Faraday's constant 96.487 c/md; S1 thickness of crystal plane in graphite or boron nitirde; S2 thickness of ideal crystal plane is diamond or borazone. USE/ADVANTAGE - Producing normal cubic diamond or hexagonal diamond (Lonsdalite) configuration from graphite and borazone from boron nitride. The synthetic diamond and borazone can be produced using an electrostatic field of 2.5-6.5 Mv/cm. The speed of reaction is controlled by the field strength and generally takes less than 1 min.

Cutlery tool

導電性ダイヤモンドとその製造方法

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Joining diamond bodies

A method of joining diamond bodies which includes the steps of positioning the bodies such that a surface of one body is close to a surface of the other body and a space is provided therebetween, growing diamond on the surfaces by chemical vapor deposition and continuing the growth until the surfaces are joined by grown diamond.

Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device

A semiconductor substrate is manufactured in which a plurality of single crystal semiconductor layers is fixed to a base substrate having low heat resistance such as a glass substrate with a buffer layer interposed therebetween. A plurality of single crystal semiconductor substrates is prepared, each of which includes a buffer layer and a damaged region which is formed by adding hydrogen ions to each semiconductor substrate and contains a large amount of hydrogen. One or more of these single crystal semiconductor substrates is fixed to a base substrate and irradiated with an electromagnetic wave having a frequency of 300 MHz to 300 GHz, thereby being divided along the damaged region. Fixture of single crystal semiconductor substrates and electromagnetic wave irradiation are repeated to manufacture a semiconductor substrate where a required number of single crystal semiconductor substrates are fixed onto the base substrate.

Optically permeable mark for precious stones marking

FIELD: marking means.SUBSTANCE: invention relates to marks used for marking precious stones, including diamonds or brilliants, and carrying information for various purposes, for example identification codes, in particular to labels invisible to the naked eye, using magnifying glass and microscopes of various types, in particular to marks located inside the volume of diamonds or brilliants without affecting their characteristics, leading to damage to the quality of diamonds or brilliants. Said technical result is achieved by using an optically permeable mark located inside a diamond or brilliant volume containing predetermined encoded information and consisting of a given set of optically permeable elements of micron or submicron size, which are areas of high concentration of atomic defects of the crystal lattice of diamond or brilliant, atomic defects of the diamond or brilliant crystal lattice are vacancies and internodes, wherein said information is encoded in at least two regions of high concentration of said atomic defects. Information is encoded in mutual spatial arrangement of said regions, in variations of concentration of atomic defects in said regions, in variations of dimensions or geometric shapes of said regions created by exposing the diamond to optical radiation focused in the focal region located in the area of the intended placement of said mark areas.EFFECT: technical problem of the disclosed solution lies in widening the field of application of the mark on diamonds with different content of natural impurities, including nitrogen with achieving a technical result consisting in solving said problem with simultaneous simplification of the process of mark application and reduction of possible effect on properties of stone during marking.5 cl, 3 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 719 611 C1 (51) МПК G09F 3/00 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (52) СПК G09F 3/00 (2020.02) (21)(22) ...

Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device

本发明提供了一种制造多个单晶半导体层隔着缓冲层固定于玻璃衬底等低耐热性支承衬底上的半导体衬底。通过将氢离子添加到半导体衬底中，准备形成有包含多量氢的损伤区域及缓冲层的多个单晶半导体衬底。将一个或多个该单晶半导体衬底固定于支承衬底上，并且通过照射频率为300MHz以上300GHz以下的电磁波，在损伤区域中分割支承衬底上的单晶半导体衬底。通过反复进行单晶半导体衬底的固定处理及电磁波照射处理，制造在支承衬底上固定需要个数的单晶半导体衬底的半导体衬底。

How to trap attacker points within the crystal lattice

본 발명에 따르면 타깃의 결정 격자 내에 트랩된 공격자점을 제작하는 방법이 제공되고, 이 방법은: 결정 격자 내의 공격자점 트랩 원소를 포함하는 타깃을 레이저 시스템에 위치시키는 단계; 레이저를 이용해 타깃 내의 결정 격자를 수정시켜 격자 공격자점을 생성하는 단계; 및 격자 공격자점이 이동해 공격자점 트랩 원소에 의해 포착되게 하도록 타깃을 어닐링하여 결정 격자 내에 트랩된 공격자점을 형성하는 단계를 포함한다. According to the present invention, there is provided a method of fabricating an attacker point trapped in a crystal lattice of a target, the method comprising: positioning a target including an attacker point trap element in the crystal lattice in a laser system; Generating a lattice attack point by modifying a crystal lattice in the target using a laser; And annealing the target such that the lattice attacker point moves and is captured by the attacker point trap element to form the trapped attacker point in the crystal lattice.

Process for making piezoelectric multidomain -structure monocrystals for precise positioning devices

FIELD: production of ferroelectric monocrystals with formed domain structure, possibly for using in precise positioning devices, for example for probe microscopes and also for aligning optical systems. SUBSTANCE: method comprises steps of forming blank from ferroelectric monocrystals inside which it is possible to create domains only with 180 degree boundaries; forming blank in such a way that at least two its faces are mutually parallel and its other faces are normal relative to parallel ones and they do not coincide with direction of spontaneous polarization; then moving blank in heat field of furnace out of zone with temperature more than Curie point to zone with temperature lower than Curie point; simultaneously applying to parallel faces of blank periodically changed sign-variable electric field; cooling the whole volume of blank lower than Curie point for creating domain structure in it. Size of domains are set depending upon blank motion speed and polarity change period of applied electric field. Then blank is separated by plates, each plate has two faces parallel relative to domain boundaries and having the same number of domains of opposite polarity. EFFECT: enlarged functional possibilities of monocrystal due to increased area restricted by domain boundaries, increased domain volume, possibility for orienting polarization vector of domain by any preset angle relative to domain boundary, possibility for creating strictly regular domain structures and domain structures changed according to desired law. 8 cl, 1 ex, 8 dwg 95$ ссСс ПЧ Го РОССИЙСКОЕ АГЕНТСТВО ПО ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (19) ВИ” 2 233 354. 13) СЛ 5 МК с 30 В 33/02, 33/04, 33/00, Н ОЛ Е 41/00, С 30 В 29/30 12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ РОССИЙСКОЙ ФЕДЕРАЦИИ (21), (22) Заявка: 2003122259/15, 22.07.2003 (24) Дата начала действия патента: 22.07.2003 (46) Дата публикации: 27.07.2004 (56) Ссылки: УР 52-041895 А, 31.03.1977. УР 55-019002 В, 23.05.1980. 4Р 53-064699 А, 09.06.1978. $Ц 502651 А, 15. ...

Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device

Edge tool

Both a rake face and a flank of an edge tool have a surface structure in which a network of recesses and protuberances surrounded by the recesses are formed, the surface structure having the characteristics described below: (1) there is no solid-solid interface between the surface structure and the interior of the edge tool, (2) the surface structure has a value of a physical property that more easily permits the surface structure to be elastically or plastically deformed than a value of the physical property of the interior of the edge tool, and (3) the protuberances have such shapes that the protuberances are elastically or plastically deformed as the protuberances rub against a workpiece.

Method of marking material and material marked according to same method

Heat treatment apparatus of an ingot crucible

본 발명은 열팽창에 따른 가변구조의 장치로 구비되어 열처리 과정 중에 장치나 도가니 자체의 손상을 방지할 수 있고, 안정적인 전원공급 구조에 의해 도가니를 대량으로 열처리하거나 대용량의 도가니를 용이하게 열처리할 수 있는 잉곳 도가니의 열처리장치에 관한 것이다. 본 발명에 따르면, 도가니 본체(10)를 수용하는 진공챔버(32)가 형성된 가열로(31)와; 상기 가열로(31)의 외부 일측에 위치되는 전원공급부(37)와, 상기 전원공급부(37)에 연결되어 일정 길이로 연장되는 케이블부(38)와, 상기 케이블부(38)에 연결되어 상기 진공챔버(32) 내에 대향되도록 위치되는 제1 및 제2 전극부(39,40)와, 상기 제1 전극부(39)와 제2 전극부(40) 사이에 발열 가능하도록 개재되어 상기 도가니 본체(10)를 가열하도록 된 히터부(41)로 구성된 가열수단(34)과; 상기 가열로(31)에 연결되어 상기 진공챔버(32) 내로 가스를 주입하도록 된 가스공급수단(35)과; 상기 가열로(31)의 외부 타측에 위치되어 가열 전후에 상기 도가니 본체(10)를 세팅 또는 배출할 수 있도록 상기 제1 전극부(39)를 전체적으로 이동시키는 전극이동수단(42)과: 상기 전극이동수단(42) 측에 구비되어 가열 도중에 상기 도가니 본체(10)의 열팽창에 의해 상기 제1 전극부(39)의 위치를 미세하게 변경시키도록 된 전극가동부(43)를 포함하는 잉곳 도가니의 열처리장치가 제공된다.

Properties of crystals

ABSTRACT OF THE DISCLOSURE A diamond is toughened by bombarding it at elevated temperature with ions such as protons which form a dislocation network in it, inhibiting microcleavage.

Synthetic single-crystal diamond

A synthetic single-crystal diamond that contains nitrogen atoms at a concentration of more than 600 ppm but no more than 1,500 ppm. The Raman shift λ' (cm-1) of the peak in a primary Raman scattering spectrum for the synthetic single-crystal diamond and the Raman shift λ (cm-1) of the peak in a primary Raman scattering spectrum for a synthetic IIa-type single-crystal diamond that has a nitrogen atom content of no more than 1 ppm satisfy expression (1). Expression (1): λ'-λ≥-0.10.

Laser apparatus and method of crystallizing

레이저 장치는 레이저 스테이지 및 콘트롤러를 포함한다. 상기 레이저는 레이저 구동전압에 따라 타겟의 일부에 선택적으로 레이저빔을 조사하되 레이저빔의 조사강도가 10ns 이내의 기간 내에 안정화된다. 상기 스테이지는 스테이지 구동전압에 따라 상기 타겟과 상기 레이저의 상대위치를 변경시킨다. 상기 콘트롤러는 상기 스테이지에 상기 스테이지 구동전압을 인가하고, 상기 레이저에 상기 레이저 구동전압을 인가한다. 따라서 정밀한 가공이 가능하고, 수율이 향상된다.

Light emitting element comprising diamond and method for producing the same

A light emitting element comprising diamond which contains N-V color centers in a maximum optical density of of 0.01 to 3.5 in a direction of excitation light, Ib type nitrogen atoms in a maximum optical density not larger than 0.2 in a wavelength range of 530 to 610 nm and optionally H3 color centers, which element can be efficiently produced from artificial diamond by a combination of irradiation by an electron beam or a neutron beam and annealing.

Geometric shape control of thin film ferroelectrics and resulting structures

A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO 3 , overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

Diamond tool

一种方法，其包括：选择金刚石材料；用中子辐照金刚石材料以提高金刚石材料的韧性和/或耐磨性；和将金刚石材料加工成一个或多个金刚石工具构件，其中所述辐照包括用具有1.0keV-12MeV能量的中子辐照金刚石材料，其中所述辐照包括控制辐照的能量和剂量，以提供具有多个孤立空位点缺陷的金刚石材料，所述孤立空位点缺陷具有1×10 14 -1×10 20 个空位/cm -3 的浓度。

Purple diamond and method of producing the same

Techniques for forming optoelectronic devices

Embodiments relate to use of a particle accelerator beam to form thin films of material from a bulk substrate. In particular embodiments, a bulk substrate (e.g. donor substrate) having a top surface is exposed to a beam of accelerated particles. In certain embodiments, this bulk substrate may comprise GaN; in other embodiments this bulk substrate may comprise Si, SiC, or other materials. Then, a thin film or wafer of material is separated from the bulk substrate by performing a controlled cleaving process along a cleave region formed by particles implanted from the beam. In certain embodiments this separated material is incorporated directly into an optoelectronic device, for example a GaN film cleaved from GaN bulk material. In some embodiments, this separated material may be employed as a template for further growth of semiconductor materials (e.g. GaN) that are useful for optoelectronic devices.

Edge tool

Both a rake face and a flank of an edge tool have a surface structure in which a network of recesses and protuberances surrounded by the recesses are formed, the surface structure having the characteristics described below: (1) there is no solid-solid interface between the surface structure and the interior of the edge tool, (2) the surface structure has a value of a physical property that more easily permits the surface structure to be elastically or plastically deformed than a value of the physical property of the interior of the edge tool, and (3) the protuberances have such shapes that the protuberances are elastically or plastically deformed as the protuberances rub against a workpiece.

Method for manufacturing semiconductor substrate

제1 기판(20) 상에 형성된 질화물계 반도체 결정(10)에 수소 이온을 주입하여 저전위밀도 영역(12) 내에 수소 이온 주입층(13)을 형성한다. 질화물계 반도체 결정(10)과 제2 기판(30)을 접합시키고, 이 상태에서 외부로부터 충격을 부여하여 수소 이온 주입층(13)을 따라 질화물계 반도체 결정(10)의 저전위밀도 영역(12)을 분리하여 저전위밀도 영역(12)의 표층부(12b)를 제2 기판(30) 상에 전사(박리)한다. 이 때, 저전위밀도 영역(12)의 하층부(12a)는 제2 기판(30) 상에는 전사되지 않고 제1 기판(20) 상에 잔존하게 된다. 저전위밀도 영역(12)의 표층부(12b)가 전사된 제2 기판(30)은 본 발명의 제조 방법에 의해 얻어지는 반도체 기판이 되며, 저전위밀도 영역(12)의 하층부(12a)가 잔존한 상태의 제1 기판(20)은 재차 에피택셜 성장용 기판으로서 이용된다. Hydrogen ions are implanted into the nitride-based semiconductor crystal 10 formed on the first substrate 20 to form the hydrogen ion implanted layer 13 in the low potential density region 12. The nitride-based semiconductor crystal 10 and the second substrate 30 are bonded to each other, and a low potential density region 12 of the nitride-based semiconductor crystal 10 is formed along the hydrogen ion implantation layer 13 in this state. ), The surface layer portion 12b of the low potential density region 12 is transferred (peeled) onto the second substrate 30. At this time, the lower layer portion 12a of the low potential density region 12 remains on the first substrate 20 without being transferred onto the second substrate 30. The second substrate 30 to which the surface layer portion 12b of the low potential density region 12 is transferred becomes a semiconductor substrate obtained by the manufacturing method of the present invention, and the lower layer portion 12a of the low potential density region 12 remains. The first substrate 20 in the state is again used as an epitaxial growth substrate.

CVD single crystal diamond

Manufacturing process of electrical insulating materials

Method and apparatus of forming domain inversion structures in a nonlinear ferroelectric substrate

一种晶体极化装置具有一个单畴铁电基板(例如掺杂氧化镁的铌酸锂基板)、样本架、高压电源、电晕炬、气体源、腔室及至少一个真空泵。在基板的第一个面上形成具有一定结构(例如周期性光栅)的电极，在样品架的顶部设置有带有面朝下的电极的基板。电极接地以使该电极区域形成高电场，该高电场是由于基板的第二个面上的电晕炬产生的电荷形成所导致的。而基板的第二个面上的电荷分布受高压电源和气体源的控制。为了使晶体极化达到最优化，利用温度控制器来设置基板的温度，并且使用真空泵使基板第一个面上的电极绝缘。

Preparation method of lithium niobate crystal domain structure and photoelectric device

本发明涉及铁电畴制备技术领域，具体而言，涉及一种铌酸锂晶体畴结构的制备方法、光电器件。铌酸锂晶体畴结构的制备方法包括以下步骤：用施加了电压的导电探针扫描铌酸锂晶体表面形成畴结构，其中导电探针在铌酸锂晶体表面形成的电场强度大于等于铌酸锂晶体发生极化反转的阈值电场强度，铌酸锂晶体为非极性的X切向或非极性的Y切向的晶体。本发明提供的制备方法对样品结构无要求，无需底电极，且能够制备出任意图案且完整的畴结构。本发明还提供了一种包括上述制备方法制得的铌酸锂晶体畴结构的光电器件。

Method for repairing single crystal diamond crystal structure based on ultrashort pulse laser

本发明公开了一种基于超短脉冲激光修复单晶金刚石晶体结构的方法。本方法采用X射线衍射、激光拉曼光谱等检测技术，能够快速、无损地对金刚石整体及局部区域的结晶质量进行判定。通过皮秒、飞秒等超短脉冲高能激光束，对金刚石中晶体质量较差的区域进行辐射退火处理，从而灵活、高效地修复其晶体结构。结合超短脉冲激光作用时间短、热影响范围小、能量密度高的特点，通过工艺参数的调节，以及退火氛围、温压条件的控制，该方法能够快速且有针对性地促进金刚石表层晶格损伤的修复，提高其晶体质量，特别适用于掺杂金刚石薄膜，能够有效提高其均匀性和晶体质量，优化薄膜的工艺性能。

The manufacture method of crystalline film, device and crystalline film or device

本发明提供在从外延生长用衬底分离后消除了晶轴角度的偏差的结晶性膜、通过设有该结晶性膜而改善了特性的各种器件、以及结晶性膜和器件的制造方法；在作为外延生长用衬底的单晶衬底的面上通过外延生长形成厚度为300μm以上10mm以下的结晶性膜，接着，将结晶性膜从单晶衬底分离，对于分离后产生翘曲的结晶性膜的厚度方向的相对位置，在将翘曲成凹状侧的面假设为0％、翘曲成凸状侧的面假设为100％时，将脉冲激光汇聚在厚度方向的3％以上且小于50％的范围内的结晶性膜内部并进行扫描，从而利用基于脉冲激光的多光子吸收来形成改性区域图形，由此减少或消除结晶性膜的翘曲量，从而减少或消除晶轴角度的偏差。

Diamond tools

다이아몬드 물질을 선택하고; 다이아몬드 물질을 조사하여 다이아몬드 물질의 인성 및/또는 내마모성을 증가시키고; 다이아몬드 물질을 하나 이상의 다이아몬드 공구 피스(piece)로 가공함을 포함하는 방법으로서, 이 때 상기 다이아몬드 물질이, 1 내지 600ppm의 단리된 질소의 총 당량 농도를 갖는 HPHT 다이아몬드 물질, 0.005 내지 100ppm의 단리된 질소의 총 당량 농도를 갖는 CVD 다이아몬드 물질, 및 1 내지 2000ppm의 총 질소 농도를 갖는 천연 다이아몬드 물질로 이루어진 군으로부터 선택되며, 상기 조사가, 다이아몬드 물질에 복수개의 단리된 공격자점(空格子點; vacancy) 점 결함(point defect)을 제공하도록 조사 에너지 및 조사량을 제어함을 포함하고, 상기 단리된 공격자점 점 결함이 1×10 14 내지 1×10 21 개의 공격자점/cm 3 의 농도를 갖는, 방법.

Method for producing porous diamond

A method for producing a porous diamond according to the present invention comprises steps of forming an anodized alumina layer, which functions as a mask, on a diamond substrate; and performing a plasma etching treatment to form pores on the diamond substrate, which pores have the same arrangement as those of the anodized alumina mask.

Optically transparent mark for marking gemstones

A kind of crystalline material ultra-precise cutting machining damage control method

本发明涉及一种晶体材料超精密车削加工损伤控制方法，包括：根据待加工材料、切削参数设计多层非晶系统，确定非晶层个数、深度及厚度，并利用蒙特卡洛数值方法模拟离子辐照过程，计算出离子源、注入能量与剂量参数组合；根据计算的注入参数采用离子注入机或高能加速器进行离子辐照，完成材料内部多层非晶结构的制备；结合刀具圆弧半径、切削深度、非晶层几何参数以及工件材料的脆塑转变厚度，确定车削允许的最大进给速率；按照上述车削参数，对改性晶体进行平面加工。

Nitride semiconductor wafer production method and nitride semiconductor wafer

The present invention relates to a nitride semiconductor wafer production method in which a nitride semiconductor film is formed on a silicon single crystal substrate, said method being characterized by comprising: a step for forming the nitride semiconductor film on the silicon single crystal substrate that has been doped with nitrogen at a concentration of 5×10 14 <sp />-5×10 16 atoms/cm 3 ; and a step for irradiating the silicon single crystal substrate with electron beams so as to cause said silicon single crystal substrate to have a higher resistivity as compared to before the irradiation. Accordingly, provided is a method for producing a nitride semiconductor wafer that is obtained by growing a nitride semiconductor film on a silicon single crystal substrate, and that can prevent the resistivity, of the the silicon single crystal substrate, set higher as a result of irradiation with electron beams from being restored to a low level when undergoing epitaxial growth or other heat treatment steps.

Crystal defects

Post-synthesis processing of diamond and related super-hard materials

High-efficiency transmission-mode diamond scintillator for quantitative characterization of X-ray beams

The luminance of a transmission mode X-ray scintillator diamond plate is dominated by induced defect centers having an excited state lifetime less than 10 msec, and in embodiments less than 1 msec, 100 usec, 10 used, 1 used, 100 nsec, or even 50 nsec, thereby providing enhanced X-ray luminance response and an X-ray flux dynamic range that is linear with X-ray flux on a log-log scale over at least three orders of magnitude. The diamond plate can be a single crystal having a dislocation density of less than 10 4 per square centimeter, and having surfaces that are ion milled instead of mechanically polished. The defect centers can be SiV centers induced by silicon doping during CVD diamond formation, and/or NV0 centers formed by nitrogen doping followed by applying electron beam irradiation of the diamond plate and annealing.

Diamond tools

다이아몬드 물질을 선택하고; 다이아몬드 물질을 중성자로 조사하여 다이아몬드 물질의 인성 및/또는 내마모성을 증가시키고; 다이아몬드 물질을 하나 이상의 다이아몬드 공구 피스(piece)로 가공함을 포함하는 방법으로서, 이 때 상기 조사가 1.0keV 내지 12MeV의 에너지를 갖는 중성자로 다이아몬드 물질을 조사함을 포함하고, 상기 조사가 다이아몬드 물질에 복수개의 단리된 공격자점(空格子點; vacancy) 점 결함(point defect)을 제공하도록 조사 에너지 및 조사량을 제어함을 포함하고, 상기 단리된 공격자점 점 결함이 1×10 14 내지 1×10 20 개의 공격자점/cm 3 의 농도를 갖는, 방법.

Method for trapping vacancies in a crystal lattice

There is provided a method of fabricating a trapped vacancy in a crystal lattice of a target comprising: positioning the target in a laser system, the target containing vacancy trapping elements within the crystal lattice; modifying the crystal lattice within the target by using a laser to generate a lattice vacancy; and annealing the target to cause the lattice vacancy to migrate and be captured by a vacancy trapping element to form the trapped vacancy in the crystal lattice.

Substrate surface treatment method

Cluster particles including a plurality of molecules or atoms are prepared by a gas cluster method, are accelerated, and are then irradiated onto a diamond in a low pressure atmosphere, so that the unevenness surfaces of the diamond are smoothed with no damages in the diamond. The cluster particles are prepared by the steps of forming, ionizing, mass-separating, and accelerating cluster particles. The cluster particles with a certain energy are irradiated onto the surface of the diamond. Irradiated cluster particles collide with the surface of the diamond, and then break apart into each molecule or atom while changing momentum (direction and speed) or energy. Thus, the surface of the diamond is efficiently smoothed and etched.

Diamond for wire drawing die and wire drawing die

내용 없음. No content.

Diamond laser and method of producing the same and method of acting the same

ABSTRACT OF THE DISCLOSURE A diamond laser formed of synthetic diamond and providing high output power and variable wavelength in the near infrared region. The maximum value of the optical density of H2 centers in the direction of pumping light is in the range of 0.01 - 4. Laser action is effected in the range of 1000 - 1400 nm by means of external pumping light at 650 - 950 nm. Such diamond laser is produced by preparing a synthetic Ib type diamond whose nitrogen concentration is 1 x 1017 - 8.5 1019 atoms/cm3, subjecting this synthetic diamond to electron irradiation to a dose of not less than 5 x 1017 electrons/cm2, and heat-treating the synthetic diamond in a vacuum of not more than 1 Torr or in an inert gas atmosphere and at 1400 - 1850°C. Let Ith the threshold value of pumping light intensity necessary for laser action. Then, to make the pumping light intensity I greater than Ith throughout the laser crystal, it is important that the maximum value of optical density of H2 centers be between 0.01 and 4.

Method for trapping vacancies in a crystal lattice

There is provided a method of fabricating a trapped vacancy in a crystal lattice of a target comprising: positioning the target in a laser system, the target containing vacancy trapping elements within the crystal lattice; modifying the crystal lattice within the target by using a laser to generate a lattice vacancy; and annealing the target to cause the lattice vacancy to migrate and be captured by a vacancy trapping element to form the trapped vacancy in the crystal lattice.

Separation method for diamond layer

Disclosed in the present invention is a separation method for diamond layer. The method comprises the following steps: performing by using laser a two-dimensional scanning to an inner side of to be treated diamond, and forming a non-diamond layer in a depth below the to be treated diamond surface; removing the non-diamond layer to realize up-down separation of the diamond. The method will not damage surface of the diamond substrate, and compared to laser cutting technology, losses in the diamond cutting is reduced; and compared to the ion implantation separation method, cost is saved and manufacturing time is shortened.

Apparatus for large-scale diamond polishing

An apparatus for the polishing of diamond surfaces, wherein the diamond surface is subjected to plasma-enhanced chemical etching using atomic oxygen polishing plasma source, is presented. In the apparatus, a magnetic filter passes a plume of high-density, low-energy, atomic oxygen plasma. The plasma is capable of uniformly polishing diamond surfaces utilizing low energy atomic oxygen ions to chemically etch a diamond surface at moderate temperatures.

Single crystal diamond substrates for synthesis of single crystal diamond material

A method of growing synthetic single crystal diamond material comprises: providing a single crystal diamond substrate; and growing synthetic single crystal diamond material on said single crystal diamond substrate, wherein said single crystal diamond substrate is formed of single crystal diamond material which is irradiated prior to growing synthetic single crystal diamond material thereon, and wherein the irradiation comprises irradiating the diamond material to a depth of 5µm or greater. The substrate may be formed from one of: single crystal synthetic HPHT material having a total equivalent isolated nitrogen concentration of 1-800 ppm; single crystal CVD diamond material have a total equivalent isolated nitrogen concentration of 0.005-100 ppm; or a natural diamond material having a total nitrogen concentration of 1-2000 ppm. The method may further comprise cooling the diamond material during the irradiation and annealing the diamond material. A composite substrate array for carrying out the method is also disclosed.

Method for manufacturing crystals for synthetic gemstones

【課題】半導体デバイスの製造用として商業的に利用できるＳｉＣ単結晶インゴットを用いて、比較的安価で、輝きを有する無色透明な合成宝石を提供する。【解決手段】ｎ型不純物を含むＳｉＣ単結晶からなる合成宝石であって、ＳｉＣ単結晶は、ｎ型不純物の密度よりも多い密度を有する炭素空孔を含み、ＳｉＣ単結晶は、波長４６０ｎｍの光吸収係数が２ｃｍ−１以下である。【選択図】図９

Diamond tools

A method comprising: selecting a diamond material; irradiating the diamond material to increase toughness and/or wear resistance of the diamond material; and processing the diamond material into one or more diamond tool pieces, wherein the diamond material is selected from the group consisting of: a HPHT diamond material having a total equivalent isolated nitrogen concentration in the range 1 to 600 ppm; a CVD diamond material having a total equivalent isolated nitrogen concentration in the range 0.005 to 100 ppm; and a natural diamond material having a total nitrogen concentration in the range 1 to 2000 ppm, wherein the irradiating comprises controlling energy and dosage of irradiation to provide the diamond material with a plurality of isolated vacancy point defects, the isolated vacancy point defects having a concentration in a range 1 x 10 14 to 1 x 10 21 vacancies/cm -3

METHOD FOR ION BEAM TREATMENT OF MONO GAS AND MULTILOADS TO PRODUCE SYNTHETIC SAPPHIRE ANTIREFLECTION MATERIALS

Procédé de traitement par un faisceau d'ions d'un gaz mono et multichargés produits par une source à résonance cyclotronique électronique (RCE) d'un matériau en saphir synthétique où - la tension d'accélération des ions comprise entre 5 kV et 1000 kV est choisie pour créer une couche implantée d'une épaisseur égale à un multiple de 100 nm; - on choisit la dose d'ions par unité de surface dans une plage comprise entre 1012 ions/cm2 et 1018 ions/cm2 de manière à créer une concentration atomique en ions égale à 10% avec une incertitude de (+/-)5%. On obtient ainsi avantageusement des matériaux en saphir synthétique antireflet dans le domaine visible. A process for ion-beam treatment of a single and multicharged gas produced by an electron cyclotron resonance (ECR) source of a synthetic sapphire material where - the ion acceleration voltage between 5 kV and 1000 kV is chosen to create an implanted layer of a thickness equal to a multiple of 100 nm; the ion dose per unit area is chosen in a range of between 10 12 ions / cm 2 and 10 18 ions / cm 2 so as to create an ionic concentration equal to 10% with an uncertainty of (+/-) 5% . Advantageously, synthetic antireflective sapphire materials are obtained in the visible range.

Manufacture method and the manufacturing method of the manufacture method of single crystalline substrate, single crystalline substrate, the single crystalline substrate with multilayer film

本发明提供的单晶衬底、单晶衬底的制造方法、使用该单晶衬底的带多层膜的单晶衬底的制造方法以及利用该制造方法的元件制造方法，对因多层膜的成膜而产生的翘曲进行矫正；在由第一区域(10D)和第二区域(10U)构成的两个区域中的任意一个区域内设有热改性层，并且，设有热改性层的区域的面侧翘曲成凸状，其中，第一区域(10D)和第二区域(10U)是在衬底的厚度方向上进行二等分而得到的。

Light emitting element comprising diamond and method for producing the same

A light emitting element comprising diamond which contains N-V color centers in a maximum optical density of of 0.01 to 3.5 in a direction of excitation light, Ib type nitrogen atoms in a maximum optical density not larger than 0.2 in a wavelength range of 530 to 610 nm and optionally H3 color centers, which element can be efficiently produced from artificial diamond by a combination of irradiation by an electron beam or a neutron beam and annealing.

METHOD FOR PRODUCING PIEZOELECTRIC SINGLE CRYSTALS WITH A MULTI-DOMAIN STRUCTURE FOR PRECISION POSITIONING DEVICES

Diamond tools

A method comprising: selecting a diamond material; irradiating the diamond material with electrons to increase toughness and/or wear resistance of the diamond material; and processing the diamond material into one or more diamond tool pieces, wherein the irradiating comprises controlling energy and dosage of irradiation to provide the diamond material with a plurality of isolated vacancy point defects, the isolated vacancy point defects having a concentration in a range 1 x 10 14 to 1 x 10 22 vacancies/cm -3

Light-transmitting mark for marking precious stone

本发明涉及用于标记宝石的标记，包括钻石或闪光体，并携带各种目的的信息，例如，识别码，尤其涉及使用放大镜和各种类型的显微镜，通过肉眼无法的看到的标记，尤其涉及位于钻石或闪光体体积内部的标记而不会影响其特征，从而对钻石或闪光体的质量产生损害。所要求保护的解决方案的技术问题是扩大在具有不同含量的自然杂质(包括氮)的钻石上使用标记的范围，以实现一种技术结果，即解决上述问题，同时简化标记过程并减少在标记期间对钻石的品质的影响。所述技术结果是通过使用位于钻石或闪光体体积内的透光标记实现的，该标记包含预定义的编码信息，并由一组给定的微米或亚微米尺寸的透光元素组成，这些透光元素是钻石或闪光体晶格中原子缺陷的浓度增加的区域，其中钻石晶格中的原子缺陷是空位和间隙，并且其中信息被编码在所述原子缺陷的浓度增加的至少两个区域中。

Substrate and method for its production

Die Erfindung betrifft ein Verfahren zur Herstellung eines Substrates (1), mit folgenden Schritten: Bereitstellen eines Substrates, welches Diamant enthält oder daraus besteht, wobei der Diamant mit Stickstoff dotiert ist; Durchführen einer ersten Wärmebehandlung des Substrates bei einer Temperatur von etwa 1500°C bis etwa 2500°C und einem Sauerstoff-Partialdruck von weniger als etwa 0,21 mPa; Bestrahlen zumindest einer Teilfläche des Substrates mit Strahlung, welche Vakanzen im Diamant erzeugt; Durchführen einer zweiten Wärmebehandlung des Substrates bei einer Temperatur von etwa 700°C bis etwa 1500°C. Weiterhin betrifft die Erfindung ein Substrat, welches Diamant enthält oder daraus besteht, wobei der Diamant NV--Zentren in einer Konzentration von mehr als etwa 0,5 ppm enthält, und die Absorption elektromagnetischer Strahlung im Diamant im Wellenlängenbereich von etwa 680 nm bis etwa 760 nm kleiner als etwa 0,4 cm-1ist The invention relates to a method for producing a substrate (1), having the following steps: providing a substrate which contains or consists of diamond, the diamond being doped with nitrogen; performing a first heat treatment on the substrate at a temperature of about 1500°C to about 2500°C and an oxygen partial pressure of less than about 0.21 mPa; irradiating at least a partial area of the substrate with radiation which produces vacancies in the diamond; performing a second heat treatment on the substrate at a temperature from about 700°C to about 1500°C. Furthermore, the invention relates to a substrate containing or consisting of diamond, the diamond containing NV centers in a concentration of more than about 0.5 ppm, and the absorption of electromagnetic radiation in the diamond in the wavelength range from about 680 nm to about 760 nm nm is less than about 0.4 cm-1

Crystalline film, device, and production methods for crystalline film and device

에피택셜성장용 기판으로부터 분리 후에 결정축의 격차가 해소된 결정성막과 그 결정성막을 갖추는 것으로 특성이 개선된 각종 디바이스의 제공, 및 결정성막과 디바이스의 제조 방법을 제공하는 것이다. 에피택셜성장용 기판인 단결정 기판의 면위에 에피택셜 성장에 의해 두께 가300μm 이상 10mm 이하의 결정성막을 형성하고, 다음에, 단결정 기판으로부터 결정성막을 분리시키고, 분리 후에 휘어진 상태가 발생한 결정성막의 두께 방향의 상대 위치에 대해, 우묵한 모양에 휘어지고 있는 측의 면을 0%로 가정하고, 볼록한 모양에 휘어지고 있는 면을 100%로 가정했을 때에, 두께 방향의 3% 이상 50% 미만의 범위내의 결정성막내부에 펄스 레이저를 집광하여 주사하고, 펄스 레이저에 의한 다광자 흡수를 이용해 개질영역패턴을 형성하는 것으로, 결정성막의 휘어진 상태량을 감소 또는 해소해, 결정축각도의 격차를 감소 또는 해소한다. A crystal film in which a crystal axis gap is removed after separation from a substrate for epitaxial growth, and a crystal film of the crystal film, thereby providing various devices with improved characteristics, and a method of producing a crystal film and a device. A crystalline film having a thickness of 300 占 퐉 or more and 10 mm or less is formed on the surface of a single crystal substrate as a substrate for epitaxial growth by epitaxial growth and then the crystal film is separated from the single crystal substrate and the crystalline film Assuming that the side of the side curved in the recessed shape is 0% with respect to the relative position in the thickness direction, and assuming that the side curved in the convex shape is 100%, a range of 3% or more and less than 50% A pulse laser is condensed and scanned in the crystal film within the crystalline film and a modified region pattern is formed by multiphoton absorption by a pulse laser to reduce or eliminate the amount of warped state of the crystal film to reduce or eliminate the difference in crystal axis angles .

Single crystal substrate, method for manufacturing single crystal substrate, method for manufacturing single crystal substrate with multilayer film, and device manufacturing method

多層膜の成膜に起因して生じる反りを矯正すること。基板の厚み方向において２等分して得られる第１領域１０Ｄおよび第２領域１０Ｕからなる２つの領域のうち、どちらか一方の領域内に熱変性層が設けられ、かつ、熱変性層が設けられている領域の面側が凸を成すように反っている単結晶基板、その製造方法、当該単結晶基板を用いた多層膜付き単結晶基板の製造方法、および、当該製造方法を利用した素子製造方法。 Correcting the warpage caused by the multilayer film formation. A heat-denatured layer is provided in one of the two regions consisting of the first region 10D and the second region 10U obtained by equally dividing the substrate in the thickness direction of the substrate, and the heat-denatured layer is provided. Single crystal substrate warped so that the surface side of the region formed is convex, a method for manufacturing the same, a method for manufacturing a single crystal substrate with a multilayer film using the single crystal substrate, and device manufacturing using the manufacturing method Method.

Synthetic single crystal diamonds, tools, and methods for manufacturing synthetic single crystal diamonds

合成単結晶ダイヤモンドは、窒素原子を６００ｐｐｍを超えて、かつ、１５００ｐｐｍ以下の濃度で含有し、前記窒素原子は、孤立置換型窒素原子を含まない。 Synthetic single crystal diamond contains nitrogen atoms in a concentration of more than 600 ppm and not more than 1500 ppm, and the nitrogen atoms do not contain isolated substitution nitrogen atoms.

Method and apparatus for large-scale diamond polishing

A method and apparatus for the polishing of diamond surfaces, wherein the diamond surface is subjected to plasma-enhanced chemical etching using an atomic oxygen polishing plasma source, are disclosed. In the apparatus, a magnetic filter passes a plume of high-density, low-energy, atomic oxygen plasma. The plasma is capable of uniformly polishing diamond surfaces. By generating high-density atomic oxygen plasma (502) with magnetic filtration, the atomic oxygen polishing plasma source (100) provides for a rapid reaction rate between the atomic oxygen plasma (502) and the diamond surface (500). Potential anisotropic effects in diamond polishing are further limited in the present invention by the selective generation of low energy atomic oxygen plasma (502). Restricting the plasma flow to low energy species limits the physical bombardment of the diamond surface (500) by atomic or molecular oxygen ions, a process that results in directional, and accordingly non-uniform, etching of the diamond surface.

Laser apparatus and method of irradiating laser beam using the same

一種雷射設備包含：基於雷射驅動電壓而選擇性地照射雷射光束到目標之一部分的雷射，其中雷射光束的強度在大約10納秒內實質地穩定下來；基於平台驅動電壓來控制目標和雷射之間之相對位置的平台；以及施加平台驅動電壓至平台且施加雷射驅動電壓至雷射的控制器。

Preparation method of composite substrate

本发明提供一种复合衬底的制备方法，所述制备方法包括如下步骤：（1）单晶衬底作为籽晶，在其中一个表面生长晶体层，得到单晶衬底与晶体层组成的复合晶体层结构；（2）激光照射所述复合晶体层结构，在所述复合晶体层结构的单晶衬底内部形成改质面；施加外力，将单晶衬底沿着改质面断开，得到复合衬底。本发明所述制备方法通过在高质量单晶衬底上生长低质量晶体层，之后采用激光冷裂切割处理，复合衬底的制备效率高且质量好，应用范围广。

Diamond tools

A method comprising: selecting a diamond material; irradiating the diamond material with electrons to increase toughness and/or wear resistance of the diamond material; and processing the diamond material into one or more diamond tool pieces, wherein the irradiating comprises controlling energy and dosage of irradiation to provide the diamond material with a plurality of isolated vacancy point defects, the isolated vacancy point defects having a concentration in a range 1×10 14 to 1×10 22 vacancies/cm −3 .

Diamond smoothing process

Eine Grenzwertenergiedichte Es, die ein Auftreten der Ablation veranlasst, wird erfasst, und eine Glättungsbearbeitung wird mit einer Glättungsbestrahlungsenergiedichte Ef ausgeführt, die auf Grundlage der erfassten Grenzwertenergiedichte Es bestimmt wird. Es ist somit möglich, die Glättungsbearbeitung mit der Glättungsbestrahlungsenergiedichte Ef entsprechend auszuführen, die es notwendigerweise möglich macht, ein auftreten der Ablation zu veranlassen, selbst wenn die Grenzwertenergiedichte Es, die das Auftreten der Ablation veranlasst, in Abhängigkeit von der Kristallgröße, dem Grad, den Dotierungselementen und dergleichen eines polykristallinen Diamantfilms variiert. Weil die Glättungsbestrahlungsenergiedichte Ef auf einen niedrigen Wert gesetzt wird, der innerhalb eines Bereichs von 1 bis 15 -mal so groß wie die Grenzwertenergiedichte Es liegt, wird ferner eine Transmission des Laserlichts in den polykristallinen Diamantfilm unterdrückt, wodurch erhabene Abschnitte einer erhabenen und vertieften Oberfläche mit höherer Priorität poliert und entfernt werden, sodass die Glättungsbearbeitung so gestaltet werden kann, um eine Oberflächenrauheit Ra von 0,2µm oder weniger zu erhalten, mit einer Summe eines polierten Betrags von Böden von Vertiefungsabschnitten der erhabenen und vertieften Oberfläche und einer Dicke der beeinträchtigten Schicht, die ein kleiner Wert wie 2,0µm oder weniger ist. A threshold energy density Es that causes the ablation to occur is detected, and smoothing processing is performed with a smoothing irradiation energy density Ef determined based on the detected threshold energy density Es. It is thus possible to carry out the smoothing processing with the smoothing irradiation energy density Ef that necessarily makes it possible to cause the ablation to occur even if the threshold energy density Es that causes the ablation to occur, depending on the crystal size, the degree Doping elements and the like of a polycrystalline diamond film varies. ...

Diamond tools

A method comprising: selecting a diamond material; irradiating the diamond material with electrons to increase toughness and/or wear resistance of the diamond material; and processing the diamond material into one or more diamond tool pieces, wherein the irradiating comprises controlling energy and dosage of irradiation to provide the diamond material with a plurality of isolated vacancy point defects, the isolated vacancy point defects having a concentration in a range 1 x 10 14 to 1 x 10 22 vacancies/cm -3

METHOD FOR ION BEAM TREATMENT OF MONO GAS AND MULTILOADS TO PRODUCE SYNTHETIC SAPPHIRE ANTIREFLECTION MATERIALS

単結晶基板製造方法および内部改質層形成単結晶部材

比較的大きくて薄い単結晶基板を容易に製造することができる単結晶基板製造方法および内部改質層形成単結晶部材を提供することを課題とする。単結晶部材上に非接触にレーザ集光手段を配置する工程と、レーザ集光手段により単結晶部材の表面（１０ｔ）にレーザ光を照射して単結晶部材の内部にレーザ光を集光する工程と、レーザ集光手段と単結晶部材とを相対的に移動させて、単結晶部材の内部に、レーザ光の照射軸と平行な多結晶部で構成される２次元状の改質層（１２）を形成する工程と、改質層（１２）により分断されてなる単結晶層（１０ｕ）を改質層（１２）との界面から剥離することで単結晶基板（１０ｓ）を形成する工程とを行う。

CVD single crystal diamond

一种利用脉冲电流进行镍基单晶高温合金均匀化的方法

本发明属于金属材料处理领域，公开了一种利用脉冲电流进行镍基单晶高温合金均匀化的方法，对铸态镍基单晶高温合金施加两级以上的梯度脉冲电流。本发明通过施加梯度脉冲电流可以快速实现单晶高温合金均匀化，消除γ/γ′共晶组织、碳化物，还能够明显改善枝晶偏析。

应力辅助的氧化还原组件及其制备方法和应用

本发明提供一种应力辅助的氧化还原组件及其制备方法和应用，所述氧化还原组件包括：单晶衬底；沉积于所述单晶衬底上的钙钛矿钴氧化物薄膜，其中所述钙钛矿钴氧化物薄膜内存在由所述单晶衬底引入的晶格应变；和附着于所述钙钛矿钴氧化物薄膜上的固态离子胶体层。本发明利用衬底来改造La x Sr 1‑x CoO 3‑δ 薄膜材料的氧化还原速率，同时将传统液态的离子液体电化学调控通过技术改造为固态、稳定的离子胶体调控，使得基于离子迁移的相变完成更为稳定、易操作。本发明的组件具有设计简单、可重复操作性、功耗低、制备成本低的特点，在氧化还原反应催化、固态离子电池、化学循环等领域中具有特殊用途和重要意义。

一种电解提纯金刚石大单晶合成块的方法

一种电解提纯金刚石大单晶合成块的方法，包括以下步骤：1）将金刚石大单晶合成块置于阳极夹具内，然后挂入电解槽；2）向电解槽内加入电解液，每1L电解液由以下组分制成：盐酸30‑150 g、活化剂15‑30g、稳定剂5‑35 g，余量为去离子水；3）将阴极板挂入电解槽内，分别将阳极夹具和阴极板接上导线；4）于电流密度为3‑5A/dm 2 下，通电电解后，金刚石大单晶合成块中金刚石大单晶掉入电解槽；5）取出金刚石大单晶，清洗即可。本发明利用电化学方法提纯金刚石大单晶合成块，电解液中仅含少量酸，电解时间短，合成块中金属电镀到阴极板上，可对金属进行回收，且减少环境污染、节约资源和能源，提高了电解效率。

一种改变磷酸钛氧钾晶体材料反转畴宽度的方法

本发明公开了一种改变磷酸钛氧钾晶体材料反转畴宽度的方法，包括以下步骤：(1)在磷酸钛氧钾晶体基材的‑Z面和+Z面分别制作第一电极和第二电极；(2)通过外加脉冲电压的方式对上述已经制作电极的磷酸钛氧钾晶体进行周期极化，并根据第一电极的尺寸设置电极线组的极化参数；(3)测试已经完成极化的磷酸钛氧钾晶体畴壁横向展宽的实际宽度；(4)将已经完成极化的磷酸钛氧钾晶体放入烘箱，并根据测试所得畴壁横向展宽的实际宽度设置烘箱的恒温温度以及时间。该方法通过高温退火使铁电畴在反转过程中的横向扩展回退，畴壁宽度接近理论值，从而实现对磷酸钛氧钾晶体反转畴的有效调控，提高晶片的转换效率，具有较好的应用前景。

一种基于mpcvd法生产渐变粉色单晶金刚石的方法

本发明公开了一种基于MPCVD法生产渐变粉色单晶金刚石的方法，直接在生长过程中调整氮气的掺杂来控制金刚石各层面氮浓度，无需多次从腔体内拿出生长后的金刚石进行加工，后续直接在同一条件下进行辐照和退火处理，操作简单，还可以有效避免金刚石表面因多次处理残留的杂质、缺陷，提高金刚石的纯净度；与单一颜色的彩色钻石相比，渐变粉色单晶金刚石具有更加吸引人的多层次颜色深浅不一的特征，更具观赏性。