Process for production of magnetic thin film, magnetic thin film, and magnetic material

The present invention provides a process for production of a magnetic thin film which has insulation properties, serves as a permanent magnet, and has improved residual magnetization in comparison with prior arts, the magnetic thin film, and a magnetic material. When a magnetic thin film 3 is formed, an external magnetic field with a predetermined intensity is applied to a coating liquid containing magnetic particles containing epsilon-type iron-oxide-based compounds which have insulation properties and which serve as a permanent magnet, and the coating liquid is let cured in order to form the magnetic thin film 3 . Accordingly, the magnetic particles containing the epsilon-type iron-oxide-based compounds can be fixed while being oriented regularly in a magnetization direction. This realizes the process for production of the magnetic thin film 3 which has insulation properties and which serve as a permanent magnet, the magnetic thin film 3 , and a magnetic material 1.

MAGNETIC PARTICLE AND METHOD

A magnetic particle () has a layered structure () between a top surface of the particle and an opposed bottom surface of the particle. Layers of the structure include one or more nonmagnetic layer(s) and one or more magnetized layer(s). The ratio of a lateral dimension of the one or more magnetized layers to the aggregate thickness of the magnetized layer or layers is greater than A plurality of such magnetic particles () can be functionalised and marked with readable codes () corresponding to the functionalisation, for use for performing assays such as bioassays. 1. A magnetic particle , comprising a layered structure between a top surface of the particle and an opposed bottom surface of the particle , the layers including one or more magnetized layers;in which the ratio of a lateral dimension of the one or more magnetized layers to a thickness or aggregate thickness of the magnetized layer or layers is greater than 500.2. (canceled)3. A magnetic particle according to claim 1 , in which the ratio of the lateral dimension of the one or more magnetized layers to the thickness or aggregate thickness of the magnetized layer or layers is greater than 1000 claim 1 , and preferably greater than 2000.4. A magnetic particle according to claim 1 , in which the magnetized layer or layers comprise a volume V of magnetic material having a magnetisation or average magnetisation Ms claim 1 , a cross section of the layer or layers has an aspect ratio AR claim 1 , and AR/Ms(with Ms measured in A/m) is greater than 8*10(A/m).5. A magnetic particle according to claim 1 , in which the magnetized layer or layers comprise a volume V of magnetic material having a magnetisation or average magnetisation Ms claim 1 , a cross section of the layer or layers has an aspect ratio AR claim 1 , and in which AR/Ms (with Ms measured in A/m) is greater than 0.001 (A/m).6. A magnetic particle according to claim 1 , in which the top and bottom surfaces of the particle are separated by a particle ...

POWDER FOR DUST CORES, METHOD FOR PRODUCING SAME, DUST CORE AND METHOD FOR PRODUCING DUST CORE

A powder for dust cores includes an aggregate of soft magnetic particles, each of which includes a soft magnetic metal particle, and a ferrite film that covers a surface of the soft magnetic metal particle and includes ferrite crystal grains having a spinel structure. A diffraction peak derived from the ferrite crystal grains exists in a powder X-ray diffraction pattern. By a method for producing a powder for dust cores, a raw material powder that includes an aggregate of soft magnetic metal particles is prepared. Furthermore, many ferrite fine particles are formed on a surface of each of the soft magnetic metal particles of the raw material powder. Additionally, the ferrite fine particles are coarsely crystallized through heat treatment to form a ferrite film, which includes ferrite crystal grains having a spinel structure, on the surface of the each of the soft magnetic metal particles. 1. A powder for dust cores , comprising an aggregate of soft magnetic particles , each of which includes:a soft magnetic metal particle; anda ferrite film that covers a surface of the soft magnetic metal particle and includes ferrite crystal grains having a spinel structure, wherein a diffraction peak derived from the ferrite crystal grains exists in a powder X-ray diffraction pattern, and the ferrite film includes a part where an interface between the ferrite crystal grains has a straight-line shape in a sectional view of the ferrite film.2. The powder for dust cores according to claim 1 , wherein a size of each of the ferrite crystal grains is 10 nm or larger.3. (canceled)4. The powder for dust cores according to claim 1 , wherein a half-value width of the diffraction peak is 0.5° or less.5. The powder for dust cores according to claim 1 , wherein a chemical composition of the ferrite film is MFeO claim 1 , where:M is at least one metal element selected from a group consisting of Fe, Cu, Mg, Ni, Zn, and Mn; andX satisfies an expression 0 Подробнее

ARTICLES INCLUDING INTERMEDIATE LAYER AND METHODS OF FORMING

Articles that include a magnetic structure; an intermediate layer, the intermediate layer positioned on the magnetic structure, the intermediate layer having a thickness from about 3 Å to about 50 Å, the intermediate layer including a bottom interface layer, the bottom interface layer positioned adjacent the magnetic structure, the bottom interface layer including atoms of a metal bonded to atoms, compounds, or both of the magnetic structure; an interlayer, the interlayer positioned on the bottom interface layer, the interlayer including oxides of the metal; and a top interface layer, the top interface layer positioned adjacent the interlayer, the top interface layer including atoms of the metal, oxides of the metal, or some combination thereof bonded to atoms or compounds of the adjacent overcoat layer; and an overcoat layer, the overcoat layer positioned on the top interface layer of the intermediate layer. 1. An article comprising:a magnetic structure; a bottom interface layer, the bottom interface layer positioned adjacent the magnetic structure, the bottom interface layer comprising atoms of a metal bonded to atoms, compounds, or both of the magnetic structure;', 'an interlayer, the interlayer positioned on the bottom interface layer, the interlayer comprising oxides of the metal; and', 'a top interface layer, the top interface layer positioned adjacent the interlayer, the top interface layer comprising atoms of the metal, oxides of the metal, or some combination thereof bonded to atoms or compounds of the adjacent overcoat layer; and, 'an intermediate layer, the intermediate layer positioned on the magnetic structure, the intermediate layer having a thickness from about 3 Å to about 50 Å, the intermediate layer comprisingan overcoat layer, the overcoat layer positioned on the top interface layer of the intermediate layer.2. The article according to claim 1 , wherein the magnetic structure comprises a magnetic transducer.3. The article according to claim 2 , ...

COMPOSITION AND METHOD OF MAKING A MONOLITHIC HETEROSTRUCTURE OF MULTIFERROIC THIN FILMS

A monolithic multiferroic heterostructure fabricated using CSD (chemical solution deposition) is disclosed. The monolithic heterostructure includes a substrate, a ferromagnetic layer, a ferroelectric layer, and one or more seed layers that enhance crystallinity and promote high frequency performance.

Thin film magnet and method for manufacturing thin film magnet

A thin film magnet includes a substrate, an oxidation-inhibiting layer in an amorphous state disposed on an upper surface of the substrate, a first magnetic layer disposed on the oxidation-inhibiting layer, an intermediate layer disposed on the first magnetic layer, a second magnetic layer disposed on the intermediate layer, and a second oxidation-inhibiting layer in an amorphous state disposed above the second magnetic layer. The intermediate layer contains metal particles. The metal particles are diffused in the first magnetic layer and the second magnetic layer. The concentration of the metal particles in a part of the first magnetic layer decreases as the distance from the intermediate layer to the part of the first magnetic layer increases. The concentration of the metal particles in a part of the second magnetic layer decreases as the distance from the intermediate layer to the part of the second magnetic layer increases.

ACOUSTIC EXCITATION AND DETECTION OF SPIN WAVES

Apparatus for generating spin waves comprising a body () of magnetic material and an elastic wave generator (), wherein the body () has a surface () and the elastic wave generator () is arranged to transmit elastic waves so that they propagate through the body () towards the surface () and are reflected at the surface to form a standing elastic wave in the body (), thereby generating spin waves. 1. Apparatus for generating spin waves comprising a body of magnetic material and an elastic wave generator , wherein the body has a surface and the elastic wave generator is arranged to transmit elastic waves so that they propagate through the body towards the surface and are reflected at the surface to form a standing elastic wave in the body , thereby generating spin waves.2. Apparatus according to wherein the body comprises a film having two opposite surfaces and the elastic wave generator is arranged to transmit the elastic waves in a direction perpendicular to the surfaces.3. Apparatus according wherein the film has a thickness and the wavelength of the elastic waves in the body is of the order of the film thickness.4. Apparatus according to further comprising a substrate having a first side and a second side which is opposite to the first side claim 2 , wherein the film is formed on the first side of the substrate and the elastic wave generator is formed on the second side of the substrate.5. Apparatus according to wherein the film is in the form of a strip claim 2 , having a length claim 2 , and the spin waves can propagate along the length of the strip.6. Apparatus according to wherein the film is in the form of a layer in which the spin waves can propagate in at least two substantially perpendicular directions.7. Apparatus according to wherein: the surface has a surface feature therein claim 1 , the elastic wave generator is arranged to transmit the elastic waves so that they propagate in a propagation direction towards the surface feature claim 1 , whereby the ...

MAGNETO-DIELECTRIC SUBSTRATE, CIRCUIT MATERIAL, AND ASSEMBLY HAVING THE SAME

A magneto-dielectric substrate includes a first dielectric layer, a second dielectric layer spaced apart from the first dielectric layer, and at least one magnetic reinforcing layer disposed between and in intimate contact with the first dielectric layer and the second dielectric layer. 1. A magneto-dielectric substrate , comprising:a first dielectric layer;a second dielectric layer spaced apart from the first dielectric layer; andat least one magnetic reinforcing layer disposed between and in intimate contact with the first dielectric layer and the second dielectric layer.2. The magneto-dielectric substrate of claim 1 , wherein the magnetic reinforcing layer comprises fibers claim 1 , wherein the fibers are ferrite fibers claim 1 , ferrite alloy fibers claim 1 , cobalt fibers claim 1 , cobalt alloy fibers claim 1 , iron fibers claim 1 , iron alloy fibers claim 1 , nickel fibers claim 1 , nickel alloy fibers claim 1 , polymer fibers comprising particulate ferrite claim 1 , a particulate ferrite alloy claim 1 , particulate cobalt claim 1 , a particulate cobalt alloy claim 1 , particulate iron claim 1 , a particulate iron alloy claim 1 , particulate nickel claim 1 , a particulate nickel alloy claim 1 , or a combination comprising at least one of the foregoing claim 1 , preferably hexaferrite claim 1 , magnetite claim 1 , or MFeO claim 1 , wherein M is at least one of Co claim 1 , Ni claim 1 , Zn claim 1 , V claim 1 , or Mn.3. The magneto-dielectric substrate of claim 1 , wherein the magnetic reinforcing layer comprises polymer or glass fibers coated with ferrite claim 1 , a ferrite alloy claim 1 , cobalt claim 1 , a cobalt alloy claim 1 , iron claim 1 , an iron alloy claim 1 , nickel claim 1 , a nickel alloy claim 1 , or a combination comprising at least one of the foregoing magnetic materials claim 1 , or a combination comprising at least one of the foregoing fibers claim 1 , preferably hexaferrite claim 1 , magnetite claim 1 , or MFeO claim 1 , wherein M is at least ...

Modified bismuth-substituted synthetic garnets for electronic applications

Embodiments disclosed herein include methods of modifying synthetic garnets used in RF applications to reduce or eliminate Yttrium or other rare earth metals in the garnets without adversely affecting the magnetic properties of the material. Some embodiments include substituting Bismuth for some of the Yttrium on the dodecahedral sites and introducing one or more high valency ions to the octahedral and tetrahedral sites. Calcium may also be added to the dodecahedral sites for valency compensation induced by the high valency ions, which could effectively displace all or most of the Yttrium (Y) in microwave device garnets. The modified synthetic garnets with substituted Yttrium (Y) can be used in various microwave magnetic devices such as circulators, isolators and resonators. 1. (canceled)2. A modified synthetic garnet having a composition represented by the formula BiYCaZrFeO , x being between 0.5 and 1.0 , bismuth being substituted for yttrium on a dodecahedral site , zirconium being substituted for iron on an octahedral site , and calcium being added to a dodecahedral site to replace yttrium and balance charges with zirconium.3. The modified synthetic garnet of wherein x is between 0.6 and 0.8.4. The modified synthetic garnet of wherein x is 0.5.5. A method of manufacturing a bismuth-modified synthetic garnet claim 3 , the method comprising:providing a material include oxides, carbonates, or a combination thereof;{'sub': x', '3-x-0.35', '0.35', '0.35', '4.65', '12, 'forming a composition represented by the formula BiYCaZrFeO, x being between 0.5 and 1.0, bismuth being substituted for yttrium on a dodecahedral site, zirconium being substituted for iron on an octahedral site, and calcium being added to the dodecahedral site to replace yttrium and balance charges with zirconium.'}6. The method of wherein x is between 0.6 and 0.8.7. The method of wherein x is 0.5.8. The method of further including forming an electronic device from the composition.9. The method of ...

Materials, devices and methods related to below-resonance radio-frequency circulators and isolators

Materials, devices and methods related to below-resonance radio-frequency (RF) circulators and isolators. In some embodiments, a circulator can include a conductor having a plurality of signal ports, and one or more magnets configured to provide a magnetic field. The circulator can further include one or more ferrite disks implemented relative to the conductor and the one or more magnets so that an RF signal can be routed selectively among the signal ports due to the magnetic field. Each of the one or more ferrite disks can include synthetic garnet material having dodecahedral sites, octahedral sites and tetrahedral sites, with bismuth (Bi) occupying at least some of the dodecahedral sites, and aluminum (Al) occupying at least some of the tetrahedral sites. Such synthetic garnet material can be represented by a formula Y 3-x-2y−z Bi x Ca 2y+z Fe 5-y-z-a V y Zr z Al a O 12 . In some embodiments, x≦1.4, y≦0.7, z≦0.7, and a≦0.75.

DEVICES AND METHODS FOR BELOW-RESONANCE RADIO-FREQUENCY APPLICATIONS

Devices and methods for below-resonance radio-frequency applications. In some embodiments, a ferrite device can include a modified yttrium iron garnet material in which bismuth occupies at least some of dodecahedral sites, and aluminum occupies at least some of tetrahedral sites. 1. A ferrite device comprising a modified yttrium iron garnet material in which bismuth occupies at least some of dodecahedral sites , and aluminum occupies at least some of tetrahedral sites.2. The ferrite device of wherein the octahedral sites are substantially free of aluminum.3. The ferrite device of wherein the material has a dielectric constant value that is at least 25.4. The ferrite device of wherein the material has a 3-db ferrimagnetic resonance linewidth value that is less than 50 Oersted.5. The ferrite device of wherein the material has a saturation magnetization value in a range of 400 to 1000 Gauss.6. The ferrite device of wherein the modified yttrium iron garnet material is represented by the formula YBiCaFeVZrAlO.7. The ferrite device of wherein bismuth occupies x formula units of dodecahedral sites claim 6 , zirconium occupies z formula units of octahedral sites claim 6 , vanadium occupies y formula units of tetrahedral sites claim 6 , calcium occupies 2y+z formula units of the dodecahedral sites to compensate for a valency imbalance resulting from the presence of zirconium and vanadium claim 6 , aluminum occupies a formula units of the tetrahedral sites while having the octahedral sites substantially free of aluminum.8. The ferrite device of wherein the quantity a is greater than zero such that saturation magnetization of the modified yttrium iron garnet material decreases in a substantially linear manner as the quantity a increases to an upper limit value of at least 0.6.9. The ferrite device of wherein the upper limit of the quantity a is less than or equal to 0.75.10. The ferrite device of wherein the quantity x is greater than zero and less than or equal to 1.4.11. The ...

MITIGATION OF CONTAMINATION OF ELECTROPLATED COBALT-PLATINUM FILMS ON SUBSTRATES

Various embodiments to mitigate the contamination of electroplated cobalt-platinum films on substrates are described. In one embodiment, a method of manufacture of a device includes depositing a diffusion barrier over a substrate, depositing a seed layer upon the diffusion barrier, and depositing a cobalt-platinum magnetic layer upon the seed layer. In a second embodiment, a method of manufacture of a device may include depositing a diffusion barrier over a substrate and depositing a cobalt-platinum magnetic layer upon the diffusion barrier. In a third embodiment, a method of manufacture of a device may include depositing an adhesion layer over a substrate, depositing a seed layer upon the adhesion layer, and depositing a cobalt-platinum magnetic layer over the seed layer. Based in part on these methods of manufacture, improvements in the interfaces between the layers can be achieved after annealing with substantial improvements in the magnetic properties of the cobalt-platinum magnetic layer. 1. A method of manufacture of a device including a magnetic layer , comprising:depositing a diffusion barrier over a substrate;depositing a seed layer upon the diffusion barrier, wherein the seed layer comprises at least one of platinum, cobalt, palladium, ruthenium, rhodium, osmium, or iridium; anddepositing a cobalt-platinum magnetic layer upon the seed layer.2. The method of manufacture according to claim 1 , wherein the substrate comprises at least one of 100 claim 1 , 110 claim 1 , or 111-oriented single crystal silicon.3. The method of manufacture according to claim 1 , wherein the substrate comprises at least one of single crystal silicon claim 1 , silicon compound claim 1 , polycrystalline silicon claim 1 , silicon dioxide claim 1 , silicon carbide claim 1 , or silicon nitride.4. The method of manufacture according to claim 1 , wherein the substrate comprises at least one of germanium claim 1 , gallium arsenide claim 1 , quartz claim 1 , or ceramic compound.5. The ...

Layered product for magnetic element, thermoelectric conversion element having layered product, and method of manufacturing the same

A magnetic element according to the present invention is formed of a layered product having a magnetic insulator film formed on a substrate including a material having no crystal structure. The magnetic insulator film has a columnar crystal structure.

ACOUSTIC EXCITATION AND DETECTION OF SPIN WAVES

Apparatus for generating spin waves comprising a body () of magnetic material and an elastic wave generator (), wherein the body () has a surface () and the elastic wave generator () is arranged to transmit elastic waves so that they propagate through the body () towards the surface () and are reflected at the surface to form a standing elastic wave in the body (), thereby generating spin waves. 129-. (canceled)30. Apparatus for generating elastic waves from spin waves , the apparatus comprising a waveguide along which spin waves can propagate , a piezoelectric element , two electrodes located on opposite sides of the piezoelectric element , and an electrical connection between the two electrodes , wherein the piezoelectric element and the electrodes are mounted on the waveguide whereby propagation of spin waves along the waveguide will generate an oscillating electrical voltage across the piezoelectric element to generate an elastic wave.31. Apparatus according to further comprising an elastic wave detector arranged to detect the elastic wave thereby to generate a detection signal wherein the waveguide has first and second opposite sides claim 30 , the piezoelectric element is located on a first one of the opposite sides claim 30 , and the elastic wave detector is located on a second one of the opposite sides whereby the elastic waves will propagate through the waveguide between the piezoelectric element and the elastic wave detector.32. Apparatus according to wherein the piezoelectric element and the elastic wave detector are located on opposite sides of the waveguide so that the elastic wave will propagate through the waveguide between the piezoelectric element and the elastic wave detector.33. A method of detecting spin waves in a waveguide claim 31 , the method comprising providing a piezoelectric element having first and second opposite sides claim 31 , and a pair of electrodes each located on a respective one of the opposite sides claim 31 , the electrodes ...

FERRITE SHEET, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC COMPONENT COMPRISING SAME

A ferrite sheet includes acicular ferrite powder, and has a uniaxially-oriented magnetic direction. The ferrite sheet is capable of remarkably increasing magnetic permeability and saturation magnetization, and accordingly is capable of remarkably improving the power efficiency of an electronic device by minimizing magnetic field leakage when being applied to a shielding sheet. 1: A ferrite sheet comprising an acicular ferrite powder and having a uniaxially-oriented magnetic direction.2: The ferrite sheet of claim 1 , wherein the ferrite powder includes at least one selected from the group consisting of hard ferrite and soft ferrite.3: The ferrite sheet of claim 2 , wherein the soft ferrite is at least one selected from the group consisting of Ni—Zn based ferrite claim 2 , Ni—Zn—Cu based ferrite claim 2 , Mn—Zn based ferrite claim 2 , Mg—Zn based ferrite claim 2 , and Ni—Mn—Zn based ferrite.4: The ferrite sheet of claim 1 , wherein magnetic permeability is in a range of 100 to 5000 in a frequency range of 100 KHz to 30 MHz.5: The ferrite sheet of claim 1 , wherein a thickness is in a range of 10 μm to 200 μm.6: A method for manufacturing a ferrite sheet claim 1 , comprising:manufacturing a ferrite green sheet comprising an acicular ferrite powder; andapplying a magnetic field during or after the manufacturing of the ferrite green sheet to uniaxially orient a magnetic direction.7: The method of claim 6 , wherein the applying of the magnetic field is performed together with sintering.8: The method of claim 7 , wherein the sintering is performed in a temperature range of 800° C. to 1000° C.9: A method for manufacturing a ferrite sheet complex claim 7 , comprising:{'claim-ref': {'@idref': 'CLM-00006', 'claim 6'}, 'attaching a protective sheet to at least one surface of the ferrite sheet manufactured according to ; and'}attaching a double-sided adhesive sheet to another surface of the ferrite sheet to form a ferrite sheet complex.10: The method of claim 9 , further ...

MULTI-LAYER MAGNETO-DIELECTRIC MATERIAL

A magneto-dielectric material operable between a minimum frequency and a maximum frequency, having: a plurality of layers that alternate between a dielectric material and a ferromagnetic material, lowermost and uppermost layers of the plurality of layers each being a dielectric material; each layer of the plurality of ferromagnetic material layers having a thickness equal to or greater than 1/15a skin depth of the respective ferromagnetic material at the maximum frequency, and equal to or less than ⅕the skin depth of the respective ferromagnetic material at the maximum frequency; each layer of the plurality of dielectric material layers having a thickness and a dielectric constant that provides a dielectric withstand voltage across the respective thickness of equal to or greater than 150 Volts peak and equal to or less than 1,500 Volts peak; and, the plurality of layers having an overall thickness equal to or less than one wavelength of the minimum frequency in the plurality of layers. 1. A magneto-dielectric material operable over an operating frequency range equal to or greater than a defined minimum frequency and equal to or less than a defined maximum frequency , the magneto-dielectric material comprising:a plurality of layers in conforming direct contact with respective adjacent layers that alternate between a dielectric material and a ferromagnetic material forming a plurality of dielectric material layers in alternating arrangement with a plurality of ferromagnetic material layers, a lowermost layer and an uppermost layer of the plurality of layers each being a dielectric material;{'sup': th', 'th, 'each layer of the plurality of ferromagnetic material layers having a thickness equal to or greater than 1/15a skin depth of the respective ferromagnetic material at the defined maximum frequency, and equal to or less than ⅕the skin depth of the respective ferromagnetic material at the defined maximum frequency;'}each layer of the plurality of dielectric material ...

Mitigation of contamination of electroplated cobalt-platinum films on substrates

Various embodiments to mitigate the contamination of electroplated cobalt-platinum films on substrates are described. In one embodiment, a device includes a substrate, a titanium nitride diffusion barrier layer formed upon the substrate, a titanium layer formed upon the titanium nitride diffusion barrier layer, a platinum seed layer, and a cobalt-platinum magnetic layer formed upon the platinum seed layer. Based in part on the use of the titanium nitride diffusion barrier layer and/or the platinum seed layer, improvements in the interfaces between the layers can be achieved after annealing, with less delamination, and with substantial improvements in the magnetic properties of the cobalt-platinum magnetic layer. Further, the cobalt-platinum magnetic layer can be formed at a relatively thin thickness of hundreds of nanometers to a few microns while still maintaining good magnetic properties.

METHOD OF AND APPARATUS FOR MEASURING MAGNITUDE OF MAGNETIZATION OF PERPENDICULAR THIN FILM

Provided is a method of measuring a magnitude of magnetization of a perpendicular magnetic thin film, including: forming a stripe pattern in which a first magnetic domain that extends in a y direction and is magnetized in a z direction and a second magnetic domain that extends in the y direction and is magnetized in a direction opposite to the z direction are arranged alternately in an x direction, in a perpendicular magnetic thin film that extends in an xy plane; changing widths in the x direction, of the first and second magnetic domains by applying a magnetic field having a predetermined magnitude, in the z direction, to the perpendicular magnetic thin film; and calculating an absolute value of the magnetization of the perpendicular magnetic thin film on the basis of a ratio between the widths in the x direction, of the first magnetic domain and the second magnetic domain. 1. A method of measuring a magnitude of magnetization of a perpendicular magnetic thin film , the method comprising:forming a stripe pattern in which a first magnetic domain that extends in a y direction and which is magnetized in a z direction and a second magnetic domain that extends in the y direction and which is magnetized in a direction opposite to the z direction are arranged alternately in an x direction, in a perpendicular magnetic thin film that extends in an xy plane;changing widths in the x direction, of the first magnetic domain and the second magnetic domain by applying a magnetic field having a predetermined magnitude, in the z direction, to the perpendicular magnetic thin film; andcalculating an absolute value of the magnetization of the perpendicular magnetic thin film on the basis of a ratio between the widths in the x direction, of the first magnetic domain and the second magnetic domain.3. The method according to claim 2 , wherein calculating an absolute value of the magnetization of the perpendicular magnetic thin film comprises:generating an image of the perpendicular ...

MITIGATION OF CONTAMINATION OF ELECTROPLATED COBALT-PLATINUM FILMS ON SUBSTRATES

Various embodiments to mitigate the contamination of electroplated cobalt-platinum films on substrates are described. In one embodiment, a method of manufacture of a device includes depositing a diffusion barrier over a substrate, depositing a seed layer upon the diffusion barrier, and depositing a cobalt-platinum magnetic layer upon the seed layer. In a second embodiment, a method of manufacture of a device may include depositing a diffusion barrier over a substrate and depositing a cobalt-platinum magnetic layer upon the diffusion barrier. In a third embodiment, a method of manufacture of a device may include depositing an adhesion layer over a substrate, depositing a seed layer upon the adhesion layer, and depositing a cobalt-platinum magnetic layer over the seed layer. Based in part on these methods of manufacture, improvements in the interfaces between the layers can be achieved after annealing with substantial improvements in the magnetic properties of the cobalt-platinum magnetic layer. 1. A method of manufacture of a device including a magnetic layer , comprising:depositing a diffusion barrier over a substrate;depositing a seed layer upon the diffusion barrier, wherein the seed layer comprises at least one of platinum, cobalt, palladium, ruthenium, rhodium, osmium, or iridium; anddepositing a cobalt-platinum magnetic layer upon the seed layer.2. The method of manufacture according to claim 1 , further comprising claim 1 , before depositing the diffusion barrier claim 1 , depositing an adhesion layer upon the substrate through a physical vapor deposition process in an atmosphere of nitrogen.3. The method of manufacture according to claim 1 , wherein the substrate comprises at least one of 100 claim 1 , 110 claim 1 , or 111-oriented single crystal silicon.4. The method of manufacture according to claim 1 , wherein the substrate comprises at least one of single crystal silicon claim 1 , silicon compound claim 1 , polycrystalline silicon claim 1 , silicon ...

THIN FILM FERRITE LAMINATION

Forming a ferrite thin film laminate includes heating a layered assembly to form a laminate. The layered assembly includes a first coated substrate having a first ferrite layer opposite a first thermoplastic surface and a second coated substrate having a second ferrite layer opposite a second thermoplastic surface to form a laminate. Each coated substrate is formed by forming a ferrite layer on a surface of a thermoplastic substrate. The coated substrates are arranged such that the first ferrite layer contacts the second thermoplastic surface. Heating the layered assembly includes bonding the first coated substrate to the second coated substrate such that the first ferrite layer is sandwiched between a first thermoplastic substrate and a second thermoplastic substrate. The ferrite thin film laminate may include a multiplicity of coated substrates. 1. A method comprising: a first coated substrate having a first ferrite layer opposite a first thermoplastic surface; and', 'a second coated substrate having a second ferrite layer opposite a second thermoplastic surface,', 'wherein the first ferrite layer contacts the second thermoplastic surface., 'heating a layered assembly to form a laminate, the layered assembly comprising2. The method of claim 1 , further comprising forming the layered assembly before heating the layered assembly.3. The method of claim 2 , wherein forming the layered assembly comprises stacking the first coated substrate on the second coated substrate.4. The method of claim 2 , wherein forming the layered assembly comprises positioning the second coated substrate on the first coated substrate.5. The method of claim 1 , wherein the first coated substrate and the second coated substrate have substantially the same dimensions.6. The method of claim 1 , wherein the thickness of the first coated substrate claim 1 , the thickness of the second coated substrate claim 1 , or both is between 10 μm and 100 μm.7. The method of claim 2 , further comprising ...

RARE EARTH REDUCED GARNET SYSTEMS AND RELATED MICROWAVE APPLICATIONS

Disclosed are synthetic garnets and related devices that can be used in radio-frequency (RF) applications. In some embodiments, such RF devices can include garnets having reduced or substantially nil Yttrium or other rare earth metals. Such garnets can be configured to yield high dielectric constants, and ferrite devices, such as TM-mode circulators/isolators, formed from such garnets can benefit from reduced dimensions. Further, reduced or nil rare earth content of such garnets can allow cost-effective fabrication of ferrite-based RF devices. In some embodiments, such ferrite devices can include other desirable properties such as low magnetic resonance linewidths. Examples of fabrication methods and RF-related properties are also disclosed. 1. (canceled)2. A modified garnet structure comprising:{'sub': 3−x', 'x', '2−y', 'y', '3−z', 'z', '12, 'a bismuth-doped garnet represented by the formula Bi(Ca)Fe(Me)Fe(Me′)O, x being greater than or equal to 1.6 and less than or equal to 2.0, and each of Me and Me′ representing a metal element.'}3. The modified garnet structure of wherein the dielectric constant value is at least 21.4. The modified garnet structure of wherein the dielectric constant value is at least 27.5. The modified garnet structure of wherein the metal element Me includes Zr and the value of y is greater than or equal to 0.35 and less than or equal to 0.75.6. The modified garnet structure of wherein the metal element Me′ includes V and the value of z is greater than or equal to 0 and less than or equal to 0.525.7. The modified garnet structure of wherein the bismuth-doped garnet is substantially free of rare earth elements.8. The modified garnet structure of wherein the garnet material has a ferrimagnetic resonance linewidth value that is less than 12 Oersted.9. A modified garnet structure comprising:{'sub': 3−x', 'x', '2−y', 'y', '3−z', 'z', '12, 'a bismuth-doped garnet represented by the formula Bi(RE or Ca)Fe(Me)Fe(Me′)O, x being greater than or equal to ...

MAGNETIC SHEET AND ELECTRONIC DEVICE

A magnetic sheet includes one or more magnetic layers formed of a metal ribbon, the metal ribbon includes fragments with metal oxide coating layers formed in spaces between the fragments. 1. A magnetic sheet comprising:one or more magnetic layers formed of a metal ribbon,wherein the metal ribbon comprises fragments with metal oxide coating layers formed in spaces between the fragments.2. The magnetic sheet of claim 1 , wherein the metal oxide coating layers are coated on surfaces of the fragments.3. The magnetic sheet of claim 1 , wherein the metal oxide coating layer comprises an atomic layer deposition layer.4. The magnetic sheet of claim 1 , wherein the metal oxide coating layer comprises any one of AlO claim 1 , TiO claim 1 , SiO claim 1 , TaO claim 1 , WO claim 1 , GaO claim 1 , InO claim 1 , or ZrO.5. The magnetic sheet of claim 1 , wherein the metal ribbon comprises an Iron (Fe) based alloy.6. The magnetic sheet of claim 1 , wherein the fragments are distributed in a random manner.7. The magnetic sheet of claim 1 , wherein the fragments comprise crack portions spaced apart from each other and are regularly arranged.8. The magnetic sheet of claim 7 , wherein the crack portions have a form in which a surface of the metal ribbon is fragmented.9. The magnetic sheet of claim 1 , wherein the one or more magnetic layers comprise a plurality of layers stacked in a direction.10. The magnetic sheet of claim 1 , wherein the metal ribbon comprises an Cobalt (Co) based alloy.11. The magnetic sheet of claim 5 , wherein the alloy further comprises Silicon (Si) and Boron (B) claim 5 , the composition of Fe in the allow is between 70 to 90 atomic percent claim 5 , and the composition of Si and B is between 10 to 30 atomic percent.12. The magnetic sheet of claim 11 , wherein the alloy further comprises 20 atomic percent or less of any one or any combination of Chromium (Cr) or Cobalt (Co).13. The magnetic sheet of claim 1 , further comprising a protective layer formed on one ...

RARE EARTH REDUCED GARNET SYSTEMS AND RELATED MICROWAVE APPLICATIONS

Disclosed are synthetic garnets and related devices that can be used in radio-frequency (RF) applications. In some embodiments, such RF devices can include garnets having reduced or substantially nil Yttrium or other rare earth metals. Such garnets can be configured to yield high dielectric constants, and ferrite devices, such as TM-mode circulators/isolators, formed from such garnets can benefit from reduced dimensions. Further, reduced or nil rare earth content of such garnets can allow cost-effective fabrication of ferrite-based RF devices. In some embodiments, such ferrite devices can include other desirable properties such as low magnetic resonance linewidths. Examples of fabrication methods and RF-related properties are also disclosed. 1. (canceled)2. A modified synthetic garnet material comprising:{'sub': 2.15−2x', '0.5', '0.35+2x', '0.35', 'x', '4.65−x', '12, 'a vanadium-doped garnet represented by the formula YBiCaZrVFeO, x being greater than or equal to 0.1 and less than or equal to 0.8, the vanadium being in a tetrahedral site of the garnet and calcium charge balancing the vanadium.'}3. The modified synthetic garnet material of wherein x is less than or equal to 0.5.4. The modified synthetic garnet material of wherein x is 0.5.5. The modified synthetic garnet material of wherein a 3 dB linewidth of the modified synthetic garnet material is about 50.6. The modified synthetic garnet material of wherein a dielectric constant and a density of the modified synthetic garnet material remains substantially the same with changing values of x.7. The modified synthetic garnet material of wherein a density of the modified synthetic garnet material is about 50.8. The modified synthetic garnet material of wherein a dielectric constant of the modified synthetic garnet material is below 25.9. The modified synthetic garnet material of wherein a 4 PiMs of the modified synthetic garnet material decreases with increasing values of x.10. A method of modifying a garnet ...

ELECTROMAGNETIC WAVE ATTENUATOR, ELECTRONIC DEVICE, FILM FORMATION APPARATUS, AND FILM FORMATION METHOD

According to one embodiment, an electromagnetic wave attenuator includes a first structure body. The first structure body includes a first member, a second member, and a third member. The first member includes a first magnetic layer and a first nonmagnetic layer alternately provided in a first direction. The first nonmagnetic layer is conductive. The first direction is a stacking direction. The second member includes a second magnetic layer and a second nonmagnetic layer alternately provided in the first direction. The second nonmagnetic layer is conductive. The third member includes a third nonmagnetic layer. The third nonmagnetic layer is conductive. A direction from the third member toward the first member is along the first direction. A direction from the third member toward the second member is along the first direction. A first magnetic layer thickness is greater than a second magnetic layer thickness.

EXCHANGE-COUPLING FILM AND MAGNETORESISTIVE ELEMENT AND MAGNETIC DETECTOR USING THE SAME

An exchange-coupling film having a large magnetic field (Hex) at which the magnetization direction of a pinned magnetic layer is reversed, thus exhibiting high stability under high-temperature conditions, and having excellent high-magnetic-field resistance includes an antiferromagnetic layer and a pinned magnetic layer in contact with the antiferromagnetic layer. The antiferromagnetic layer has an alternating multilayer structure of three or more layers, the layers including alternately stacked XCr and XMn layers, where Xrepresents one or more elements selected from the group consisting of platinum group elements and Ni, and Xrepresents one or more elements selected from the group consisting of platinum group elements and Ni and may be the same as or different from X. 1. An exchange-coupling film comprising:an antiferromagnetic layer; anda pinned magnetic layer in contact with the antiferromagnetic layer,{'sup': 1', '2', '1', '2, 'wherein the antiferromagnetic layer has an alternating multilayer structure of three or more layers, the layers including alternately stacked XCr and XMn layers, where Xrepresents one or more elements selected from the group consisting of platinum group elements and Ni, and Xrepresents one or more elements selected from the group consisting of platinum group elements and Ni.'}2. The exchange-coupling film according to claim 1 , wherein Xis the same as X.3. The exchange-coupling film according to claim 1 , wherein Xis different from X.4. The exchange-coupling film according to claim 1 , wherein{'sup': '1', 'Xis Pt, and'}{'sup': '2', 'Xis Pt or Ir.'}5. The exchange-coupling film according to claim 1 , wherein the antiferromagnetic layer includes a plurality of unit stacks claim 1 , each comprising a unit of the XCr and XMn layers.6. The exchange-coupling film according to claim 5 , wherein{'sup': '1', 'the XCr layers in the unit stacks have the same film thickness,'}{'sup': '2', 'the XMn layers in the unit stacks have the same film thickness ...

MAGNETIC FIELD SHIELD SHEET FOR WIRELESS POWER TRANSMISSION AND WIRELESS POWER RECEIVING MODULE COMPRISING SAME

There is provided a magnetic field shielding sheet for wireless power transmission. The present disclosure to provide a magnetic field shielding sheet for wireless power transmission that includes a first shielding sheet for shielding a magnetic field generated from a first wireless power transmission antenna operable in a magnetic induction method, a second shielding sheet for shielding a magnetic field generated from a second wireless power transmission antenna operable in a magnetic resonance method, and a third shielding sheet which is stacked on the same surface of the first shielding sheet and the second shielding sheet so as to cover the first shielding sheet and the second shielding sheet, for shielding the magnetic field generated from the second wireless power transmission antenna. 1. A magnetic field shielding sheet for wireless power transmission comprising;a first shielding sheet for shielding a magnetic field generated from a first wireless power transmission antenna operable in a magnetic induction method;a second shielding sheet for shielding a magnetic field generated from a second wireless power transmission antenna operable in a magnetic resonance method, the second shielding sheet including a receiving portion for receiving a thickness of the first shielding sheet; anda third shielding sheet which is stacked on the same surface of the first shielding sheet and the second shielding sheet to cover the first shielding sheet and the second shielding sheet, for shielding the magnetic field generated from the second wireless power transmission antenna.2. The magnetic field shielding sheet for wireless power transmission of claim 1 , wherein the third shielding sheet is disposed to cover a boundary region of the first shielding sheet and the second shielding sheet.3. The magnetic field shielding sheet for wireless power transmission of claim 1 , wherein the first shielding sheet is a ribbon sheet including at least one of an amorphous alloy and a ...

LARGE MOMENTS IN BCC FExCOyMNz AND OTHER ALLOY THIN FILMS

Large magnetic moment compositions are formed by stabilizing ternary or other alloys with a epitaxial control layer. Compositions that are unstable in bulk specimen are thus stabilized and exhibit magnetic moments that are greater that a Slater-Pauling limit. In one example, FeCoMnlayers are produced on an MgO(001) substrate with an MgO surface serving to control the structure of the FeCoMnlayers. Magnetizations greater than 3 Bohr magnetons are produced. 1. A composition , comprising:{'sub': x1', 'y1', 'z1', 'x2', 'y2', 'z2', 'x3', 'y3', 'z3', 'w', 'x4', 'y4', 'z4', 'B', 'B, 'an epitaxially enhanced magnetic layer (EEML) consisting of one or more of FeCoMn, FeCoCr, FeCoV, and/or FeCoMnCror any mixture thereof that exhibits a magnetic moment per atom of at least 1 μ, wherein x1, y1, z1, x2, y2, z2, x3, y3, z3, w, x4, y4, z4 are positive numbers such that x1+y1+z1=1, x2+y2+z2=1, x3+y3+z3=1, and w+x4+y4+z4=1, and μis a Bohr magneton; and'}an epitaxial control layer associated with a composition of the EEML.2. The composition of claim 1 , wherein the EEML has a thickness that is less than 100 nm.3. The composition of claim 1 , wherein the epitaxial control layer is one or more of MgO claim 1 , ZnSe claim 1 , and GaAs.4. The composition of claim 1 , wherein the EEML is FeCoMn.5. The composition of claim 4 , wherein the epitaxial control layer is MgO(001).6. The composition of claim 1 , wherein the EEML consists essentially of FeCoCr.7. The composition of claim 1 , wherein the EEML is FeCoV.8. The composition of claim 1 , wherein the EEML is FeCoMnCr.9. The composition of claim 1 , wherein an average magnetic moment per atom is greater than 2.45μ.10. The composition of claim 1 , wherein an average magnetic moment per atom is greater than 3.0μ.11. The composition of claim 1 , wherein the EEML is FeCoMnand has an average magnetic moment per atom greater than 2.5μ.12. The composition of claim 1 , wherein an electron number is greater than 26.13. A memory device claim 1 , ...

CHIP-SCALE RESONANT GYRATOR FOR PASSIVE NON-RECIPROCAL DEVICES

A method includes depositing a first metal layer on a semiconductor substrate; etching the first metal layer to form a first electrode having a first lead; depositing a piezoelectric layer on the semiconductor substrate and first electrode; etching the piezoelectric layer to a shape of the gyrator to be formed within the circulator; depositing a second metal layer on the piezoelectric layer; etching the second metal layer to form a second electrode having a second lead, the second electrode being positioned opposite the first electrode, wherein the first lead and the second lead form an electrical port; depositing a magnetostrictive layer on the second electrode; etching the magnetostrictive layer to approximately the shape of the piezoelectric layer; depositing a third metal layer on the magnetostrictive layer; and etching the third metal layer to form a metal coil that has a gap on one side to define a magnetic port. 1. A method for creating one of a gyrator or a circulator within an integrated circuit , the method comprising:depositing a first metal layer on a semiconductor substrate;etching the first metal layer to form a first electrode having a first lead;depositing a piezoelectric layer on the semiconductor substrate and first electrode;etching the piezoelectric layer to a shape of the gyrator to be formed within the circulator;depositing a second metal layer on the piezoelectric layer;etching the second metal layer to form a second electrode having a second lead, the second electrode being positioned opposite the first electrode, wherein the first lead and the second lead form an electrical port;depositing a magnetostrictive layer on the second electrode;etching the magnetostrictive layer to approximately the shape of the piezoelectric layer;depositing a third metal layer on the magnetostrictive layer; andetching the third metal layer to form a metal coil that has a gap on one side to define a magnetic port.2. The method of claim 1 , wherein the etching the ...

PATTERN WRITING OF MAGNETIC ORDER USING ION IRRADIATION OF A MAGNETIC PHASE TRANSITIONAL THIN FILM

Also disclosed herein is an article having a substrate and a layer of an FeRh alloy disposed on the substrate. The alloy has a continuous antiferromagnetic phase and one or more discrete phases smaller in area than the continuous phase having a lower metamagnetic transition temperature than the continuous phase. Also disclosed herein is a method of: providing an article having a substrate and a layer having a continuous phase of an antiferromagnetic FeRh alloy disposed on the substrate and directing an ion source at one or more portions of the alloy to create one or more discrete phases having a lower metamagnetic transition temperature than the continuous phase. 1. An article comprising:a substrate; and wherein the alloy comprises:', 'a continuous antiferromagnetic phase; and', 'one or more discrete phases smaller in area than the continuous phase having a lower metamagnetic transition temperature than the continuous phase., 'a layer of an FeRh alloy disposed on the substrate;'}2. The article of claim 1 , wherein the alloy comprises an array of the discrete phases.3. The article of claim 1 , wherein the discrete phase is ferromagnetic.4. A method comprising:{'claim-ref': {'@idref': 'CLM-00003', 'claim 3'}, 'providing the article of ; and'}orienting the magnetic polarization of a first ferromagnetic discrete phase.5. The method of claim 4 , further comprising:orienting the magnetic polarization of a second ferromagnetic discrete phase in a direction different from that of the first ferromagnetic discrete phase.6. A method comprising:{'claim-ref': {'@idref': 'CLM-00003', 'claim 3'}, 'providing the article of ; and'}determining the orientation of the magnetic polarization of the ferromagnetic discrete phase.7. The article of claim 1 , wherein the area of the discrete phase is no more than 1000 μm.8. The article of claim 1 , wherein the area of the discrete phase is no more than 1000 nm.9. The article of claim 1 , wherein the discrete phase has a metamagnetic ...

Giant magnetoresistive effect memory cell

A digital data memory having a bit structure in a memory cell based on an intermediate separating material with two major surfaces having thereon a magnetoresistive, anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.

Thin film magnetic field sensor

A magnetic field effect sensor system having giant magneto-impedance elements. The elements may be elongated strips, and in proximity to and parallel with one another, and connected in series with connections or electrodes. The elements may have a regular shape without turns. They may have a single- or multi-layer structure. Some of the layers in the elements may contain a soft magnetic material, for instance, which form a closed loop for magnetic flux around a non-magnetic conductor.

수직 자기 이방성을 갖는 강자성 다층박막, 이를 포함하는 mtj 구조 및 자성소자

수직 자기 이방성을 갖는 강자성 다층박막, 이를 포함하는 MTJ 구조 및 자성소자를 제공한다. 수직 자기 이방성을 갖는 강자성 다층박막은 제1 강자성 물질을 주 원소로 하는 강자성층 및 상기 강자성층 상에 위치하는 전도성 산화물층을 포함하되, 상기 강자성층 및 상기 전도성 산화물층이 교대로 반복적으로 적층된 다층박막인 것을 특징으로 한다. 따라서, 따라서, 전도성 산화물층에 의하여 수직자기이방성을 유도하여 열적 안정성을 향상시키면서 동시에 자기저항비를 높일 수 있다.

Garnet film for magnetic bubble

적층형 전자부품 및 그 제조방법

본 발명은 적층형 전자부품 및 그 제조방법에 관한 것으로, 보다 상세하게는 이종 재료의 별도의 비자성체 층을 삽입하지 않으면서도 고전류에서 전류 인가에 따른 인덕턴스 값의 변화 특성을 개선할 수 있고, 이종 재료의 별도의 비자성체 층을 삽입하지 않으므로 이종 재료 간의 수축률 차이를 조절할 필요가 없으며, 제조 공정이 간편화될 수 있는 적층형 전자부품 및 그 제조방법에 관한 것이다.

Magnetic thin film and recording head

一种软磁薄膜及其制备方法

本发明提供了一种软磁薄膜及其制备方法。本发明的软磁薄膜，包括堆叠设置的多组层结构，每组层结构包括软磁材料层及位于软磁材料层上方的介质层，每组层结构还包括第一粘结层和/或第二粘结层，第一粘结层和第二粘结层用于增强层结构的粘附性；其中，第一粘结层位于软磁材料层和介质层之间，和/或，第二粘结层位于介质层之上。本发明的软磁薄膜的制备方法，包括循环制备层结构的步骤，以形成堆叠设置的多组层结构，制备层结构的步骤包括：S1：溅射软磁材料层；S2：溅射介质层；在S1和S2之间还包括S3：在软磁材料层上溅射第一粘结层；和/或，在S2之后还包括S4：在介质层上溅射第二粘结层。

层叠电感器

本发明提供一种层叠电感器，层叠以Ni-Zn-Cu类铁氧体为主要成分的多个第一绝缘体层和以Ag为主要成分多个导电体层，在层叠体的内部设置螺旋状线圈，螺旋状线圈是多个导电体层和通孔导体相互连接而成的，以横穿螺旋状线圈的内侧磁路的方式配置矩形的第二绝缘体层，第二绝缘体层以具有比第一绝缘体层的导磁率低的导磁率的Zn类铁氧体为主要成分，并且，第二绝缘体层的主面边缘部和导电体层在层叠方向上重叠，在该重叠的部分，第二绝缘体层和导电体层接触。因此，在层叠体的内部与导电体层接触的、磁通量密度最容易变高的部分的磁通量不可避免地通过第二绝缘体层，从而能够无差异地改善电流直流叠加特性。

Magnetic multi layer thin film and manufacturing method of the same

본 개시의 일 실시예의 자성 다층 박막은, 중금속층, 중금속층의 상면에 형성되는 자성층 및 자성층의 상면에 형성되는 산화막을 포함하고, 산화막은, 제1 두께를 갖는 제1 영역 및 제1 두께와 상이한 제2 두께를 갖는 제2 영역을 포함하고, 제1 영역과 제2 영역은 상이한 크기의 수직이방성을 가질 수 있다. The magnetic multilayer thin film of an embodiment of the present disclosure includes a heavy metal layer, a magnetic layer formed on the upper surface of the heavy metal layer, and an oxide film formed on the upper surface of the magnetic layer, wherein the oxide film includes a first region having a first thickness and a first thickness and A second region having a different second thickness may be included, and the first region and the second region may have different sizes of perpendicular anisotropy.

Body with magnetic film attached and manufacturing method therefor

자성막을 기체(基體)에 부착하여 이루어진 자성막 부착체의 제조 방법을 제공한다. 이 제조 방법은, 기체를 준비하는 공정과, 교대로 적층된 유기물막 및 페라이트막으로 이루어진 자성막을 기체 위에 형성하는 공정을 구비한다. 이 제조 방법에 있어서, 자성막을 형성하는 공정은, 20㎛ 이하의 막 두께를 가지는 페라이트막을 페라이트 도금법에 의해 형성하는 공정과, 0.1㎛ 이상 20㎛ 이하의 막 두께를 가지는 유기물막으로서, 상기 유기물막의 막 두께(t)와 영률(E)의 비(t/E)가 0.025㎛/GPa 이상인 유기물막을 형성하는 공정을 교대로 행하는 것이다. There is provided a method of manufacturing a magnetic film adherend comprising a magnetic film adhered to a substrate. This manufacturing method includes a step of preparing a gas and a step of forming a magnetic film composed of an alternately stacked organic film and a ferrite film on a substrate. In this manufacturing method, the step of forming a magnetic film is a step of forming a ferrite film having a film thickness of 20 mu m or less by a ferrite plating method, and an organic film having a film thickness of 0.1 mu m or more and 20 mu m or less, (T / E) of the film thickness (t) and the Young's modulus (E) is 0.025 탆 / GPa or more.

Feeding device of sensitive film

(57)【要約】 （修正有） 【課題】 加工中のエピタキシャル膜のクラック発生が 低減され、磁気光学素子用チップ歩留りが向上する酸化 物ガーネット膜を提供する。 【解決手段】 液相エピタキシャル法によって融液中で 酸化物ガーネット基板の両面に酸化物ガーネット膜を成 長させる方法において、該酸化物ガーネット基板の方位 を、結晶の破壊が生じやすい {110}、{112} 、{123} の ±５°以内とすることを特徴とする酸化物ガーネット膜 の製造方法。

Ferrite sheet complex and method for fabricating the same

본 발명은 페라이트 시트 복합체 및 그 제조 방법을 공개한다. 상기 페라이트 시트 복합체 제조 방법은 페라이트 시트 양 면 각각에 보호 시트 또는 양면 접착용 시트를 선택적으로 부착하여 페라이트 시트 복합체를 제조하는 단계 및 상기 페라이트 시트 복합체에 표면에 복수의 돌기가 형성된 롤러를 회전시키면서 압력을 가하여 상기 페라이트 시트 복합체 내의 페라이트 시트를 복수의 조각으로 파단하는 단계를 포함한다. 상기 페라이트 시트 복합체 제조 방법은 요철이 있는 전자 기기의 표면에 균일하게 밀착되어 부착될 수 있는 페라이트 시트 복합체를 제조할 수 있다.

Near-field-noise-suppressing sheet

The thin coating method for epitaxial ba-ferrite

PURPOSE: A manufacturing method of epitaxial barium-ferrite thin film is provided, which can produce epitaxial barium-ferrite thin film having excellent crystal orientation by using laser ablation process. The method is characterized by using pure oxygen of more than 99.99% for preventing any influent of impurities to the thin film, adjusting oxygen partial pressure to 500-900mTorr for preventing other crystal from forming and adjusting the energy density of KrF excimer laser to 4.4-6.6J per square cm for shortening the thin film formation time. CONSTITUTION: The manufacturing method is as follows: (i) heat the substrate of single crystal (001)Al2O3 or (012)Al2O3 set in the vacuum reaction room to 700 deg.C; (ii) adjust the oxygen pressure to 500-900mTorr by feeding oxygen of high purity of more than 99.99%; (iii) adjust the energy density of KrF excimer laser to 4.4-6.67J per square cm by rotating BaFe12O19 target and the Al2O3 substrate, irradiate to the BaFe12O19 target to ablate particle from the target and vapor deposit thin film of 0.4-1.5Å/s of BaFe12O19 on the Al2O3 substrate; and (iv) cool the vapor deposited Al2O3 substrate by a rate of 3-5 deg.C per min.

Magneto-optical element material

A kind of preparation method of garnet Magneto-optic Thin Film Material

本发明公开了一种石榴石磁光薄膜材料的制备方法，属于磁光材料制备技术领域。本发明将聚二烯丙基二甲基氯化铵溶液与羧甲基纤维素钠溶液等混合水浴加热，加入聚乙烯亚胺溶液等搅拌，经干燥碾磨制得聚电解质粉末，与乙酸钙等水浴加热，经过滤、保温矿化、球磨过筛后，与丙酮混合超声分散得混合分散液，再取硝酸溶液、硝酸铁等混合制得混合液，滴加氨水，并静置、过滤、干燥后，与混合分散液混合，经超声分散、水浴加热、浓缩制得镀膜基液，滴加至玻璃片表面进行旋转镀膜，再干燥制得石榴石磁光薄膜材料。本发明制备步骤简单，制备过程中颗粒分散均匀，所得石榴石薄膜具有极好的致密性。

The method of obtaining monovinylacetylene

Magnetostatic wave device

(57)【要約】 【課題】 膜厚が薄い置換型Ｒ，Ａ：ＹＩＧを用いても 動作し、より動作周波数帯域が広い静磁波デバイスを提 供する。 【解決手段】 磁性ガーネット膜によって構成される静 磁波デバイスである。この磁性ガーネット膜の材料は、 一般式（Ｙ 1-r Ｒ r ） 3 （Ｆｅ 1-a Ａ a ） 5 Ｏ 12 （ただ し、ＲはＬａ，Ｂｉ，Ｇｄ，Ｌｕから選ばれる少なくと も一種であり、ＡはＡｌ，Ｇａ，Ｉｎ，Ｓｃから選ばれ る少なくとも一種であり、ｒおよびａは、それぞれ、０ ≦ｒ≦１、０≦ａ＜１の範囲内にあり、ｒおよびａは同 時には０にならない。）で表される。また、この磁性ガ ーネット膜について、Ｘ線回折法でロッキングカーブ測 定を行ったとき、主格子点を０次とする一連のサテライ ト反射が存在する。

MIDDLE INTERFERENCE SHEET

1. Лист для подавления помех в ближней зоне, содержащий пару пленок из пластмассы, каждая из которых имеет на одной поверхности тонкую металлическую пленку, которые склеены электропроводящим клеем тонкими металлическими пленками внутрь, при этом каждая тонкая металлическая пленка выполнена из магнитного металла и имеет толщину, отрегулированную так, что пара склеенных тонких металлических пленок имеет поверхностное сопротивление 20-150 Ом на квадрат.2. Лист по п.1, в котором упомянутый магнитный металл представляет собой Ni, Fe, Co или их сплав.3. Лист по п.1, в котором упомянутая тонкая металлическая пленка выполнена из Ni.4. Лист по п.1, в котором обе тонких металлических пленки имеют толщину в пределах 10-30 мм.5. Лист по п.1, в котором пара склеенных тонких металлических пленок имеет поверхностное сопротивление 30-80 Ом на квадрат.6. Лист по любому из пп.1-5, в котором упомянутая тонкая металлическая пленка получена способом вакуумного осаждения из паровой фазы. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (51) МПК H05K 9/00 (13) 2013 143 290 A (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ЗАЯВКА НА ИЗОБРЕТЕНИЕ (21)(22) Заявка: 2013143290/07, 14.11.2011 (71) Заявитель(и): КАГАВА Сейдзи (JP) Приоритет(ы): (30) Конвенционный приоритет: (72) Автор(ы): КАГАВА Сейдзи (JP) 25.02.2011 JP 2011-040977 (85) Дата начала рассмотрения заявки PCT на национальной фазе: 25.09.2013 R U (43) Дата публикации заявки: 27.03.2015 Бюл. № 9 (86) Заявка PCT: (87) Публикация заявки PCT: WO 2012/114587 (30.08.2012) R U (54) ЛИСТ ДЛЯ ПОДАВЛЕНИЯ ПОМЕХ В БЛИЖНЕЙ ЗОНЕ (57) Формула изобретения 1. Лист для подавления помех в ближней зоне, содержащий пару пленок из пластмассы, каждая из которых имеет на одной поверхности тонкую металлическую пленку, которые склеены электропроводящим клеем тонкими металлическими пленками внутрь, при этом каждая тонкая металлическая пленка выполнена из магнитного металла и имеет толщину, отрегулированную так, что пара склеенных тонких металлических ...

Patent JPS5219680B2

Manufacture of magnetic thin film

Ion plating device

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Yig thin film microwave device

내용 없음. No content.

Low-loss power ferrite and manufacturing method thereof

多相铁氧体组合物包含：由MnZn铁氧体基体组成的主相；和0.01重量百分比至10重量百分比微米级夹杂物颗粒，所述微米级夹杂物颗粒包括正铁氧体RFeO3(其中R为稀土离子)、钇铁石榴石(YIG)、或其组合，其中微米级夹杂物颗粒的平均颗粒尺寸(D50)为0.1微米至5微米，以及其中微米级夹杂物颗粒的D50小于MnZn铁氧体颗粒的平均颗粒尺寸(D50)；以及任选的0.01重量百分比至5重量百分比添加剂；其中重量百分比基于多相铁氧体组合物的总重量。还公开了制造多相铁氧体组合物的方法。

Magnetic field shielding sheet for wireless power transmission and wireless power receiving module including the same

本发明提供一种无线电力传输用磁场屏蔽片以及包括其的无线电力接收模块。根据本发明示例性实施例的无线电力传输用磁场屏蔽片包括：第一薄片，其屏蔽从以磁感应方式运转的第一无线电力传输用天线产生的磁场；第二薄片，其具备用于收容上述第一薄片的厚度的收容部，且屏蔽从以磁共振方式运转的第二无线电力传输用天线产生的磁场；以及第三薄片，其以同时覆盖上述第一薄片以及第二薄片的方式层压在上述第一薄片和第二薄片的同一面上，以屏蔽从上述第二无线电力传输用天线产生的磁场。

Perpendicular magnetic film, perpendicular magnetic film structure, magnetoresistive element and perpendicular magnetic recording medium

Magnetic material for vacuum evaporation

Preparation method and application of ferroferric oxide single-layer nano film

一种四氧化三铁单层纳米膜的制备方法及其应用，属于纳米材料自组装和离子通道研究领域。本发明首先以油酸铁为前聚体，油酸为配体，合成油相四氧化三铁纳米颗粒；然后通过二乙二醇高温转相，获得表面为聚丙烯酸的水溶性四氧化三铁纳米颗粒；将获得的水相四氧化三铁纳米颗粒在液‑液界面进行自组装获得有序的四氧化三铁单层纳米薄膜。采用四氧化三铁单层纳米膜制备四氧化三铁纳米通道，通过线性扫描方法，测试其电流‑电压曲线；其电化学测试时具备离子选择性。本发明提供了精准可控的二维四氧化三铁材料的制备方法，也表明了四氧化三铁纳米薄膜在离子通道研究领域的巨大的应用潜力，为磁响应纳米通道的研究提供了新的思路。

Micro coil manufacturing method

본 발명은 마이크로 코일의 제조방법에 관한 것이다. The present invention relates to a method of manufacturing a micro coil. 기판과절연층을 소정의 진공증착에 의하여 형성하는 단계와, 상기 기판 상에 금속층을 전착하는 단계와, 시드 층으로서의 하지막을 소정의 두께로 증착하는 단계와, 상기 하지막 상에 마이크로 코일의 도금시 몰드 역할을 할 수 있는 절연층 패턴을 형성하는 단계와, 상기 절연층 전체에 걸쳐서 코일용 금속층을 증착하는 단계와, 상기 절연층과 하지막을 제거하는 단계로 이루어진다. Forming a substrate and an insulating layer by a predetermined vacuum deposition; depositing a metal layer on the substrate; depositing a base film as a seed layer to a predetermined thickness; plating a micro coil on the base film. Forming an insulating layer pattern that can serve as a mold during the mold, depositing a metal layer for the coil over the entire insulating layer, and removing the insulating layer and the underlying film. 따라서, 도금용 미세패턴 상에 금속층을 증착함에 있어서 절연층에 인접한 코일부에서의 전류밀도의 집중에 의한 도금두께의 불균일한 분포를 효과적으로 완화시킴으로써 균일한 두께의 마이크로 코일을 재현성있게 제조할 수 있는 효과가 있다. Therefore, in depositing a metal layer on the plating micropattern, the microcoil of uniform thickness can be reproducibly produced by effectively alleviating the uneven distribution of the plating thickness due to the concentration of the current density in the coil portion adjacent to the insulating layer. It works.

Magnetostatic wave device and material for the same

A kind of vertical orientated ferromagnetism dielectric film and preparation method thereof

本发明涉及一种强磁性介质薄膜，具体涉及一种垂直取向强磁性介质薄膜及其制备方法。本发明的技术方案如下：一种垂直取向强磁性介质薄膜，包括依次层叠的衬底、缓冲层、垂直取向强磁性介质层和保护层，所述衬底为单晶、多晶或非晶基片，所述缓冲层材质为具有六方晶体结构的无机非金属氮化物陶瓷，所述垂直取向强磁性介质层为钐钴薄膜、铝镍钴薄膜、鉄铂薄膜、铁钯薄膜、钴铂薄膜和/或钴钯薄膜，所述保护层为过渡金属、氮化物膜体材料或氧化物膜体材料。本发明提供的垂直取向强磁性介质薄膜及其制备方法，具有体积小、垂直磁化方向、作为存储单元的晶粒尺寸小、矫顽力大、稳定性高等优点，制备工艺简单，应用领域更广。

Garnet film for magnetic bubble element

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Patent JPH0570290B2

METHOD FOR TRANSFERRING FILMS

Patent FR2389968B1

Patent FR2389968A1

a. Structure magnétique créant un champ de polarisation pour des éléments de mémoire à bulle magnétique b. Structure caractérisée en ce qu'elle se compose d'une couche de ferrite dure formée de particules de ferrite dure et d'une couche de ferrite douce formée de particules de ferrite douce, ces deux couches étant réunies par frittage pour former une liaison entre elles et donner une structure stratifiée. at. Magnetic structure creating a bias field for magnetic bubble memory elements b. Structure characterized in that it consists of a hard ferrite layer formed of hard ferrite particles and a soft ferrite layer formed of soft ferrite particles, these two layers being joined by sintering to form a bond between them and give a layered structure.

Patent FR2202052B3

MAGNETIC MATERIAL OF THE GRENATE TYPE, MAGNETIC FILM WITH HIGH ROTATION FARADAY COMPRISING SUCH A MATERIAL AND METHOD FOR MANUFACTURING THE SAME

Magnetisable garnet film on gadolinium-gallium garnet substrate - giving normal magnetic zones, for digital logical manipulations

METHOD FOR TRANSFERRING FILMS

L'invention concerne un procédé de report d'une couche en un premier matériau, à partir d'un premier substrat (4), présentant des défauts dans une zone proche de sa surface, sur un substrat hôte (20), en un deuxième matériau, comportant :a) une étape d'amincissement du premier substrat, pour former un premier substrat aminci (24),b) une implantation d'ions ou d'atomes dans ce premier substrat, pour y former un plan d'implantation (6), délimitant la couche à reporter,c) un report de ladite couche sur le substrat hôte (20), par fracture du substrat le long du plan d'implantation.

MAGNETIC MATERIAL OF THE GRENATE TYPE, FARADAY HIGH-ROTATING MAGNETIC FILM COMPRISING SUCH MATERIAL AND METHOD OF MANUFACTURING THE SAME

CE MATERIAU MAGNETIQUE REPOND A LA FORMULE: (CF DESSIN DANS BOPI) DANS LAQUELLE M REPRESENTE SOIT UN OU PLUSIEURS ELEMENTS DES TERRES RARES CHOISIS PARMI LE LUTETIUM, LE THULIUM, L'YTTERBIUM, SOIT L'YTTRIUM ET X, X, Y ET Y SONT TELS QUE: 0X1,5; 0X0,5; 0Y1; 0Y1; A CONDITION QUE Y ET Y NE SOIENT PAS TOUS DEUX EGAUX A 0 ET QUE Y Y SOIT AU PLUS EGAL A 1. IL PEUT ETRE DEPOSE PAR EPITAXIE EN PHASE LIQUIDE SUR UN SUBSTRAT TRANSPARENT NON MAGNETIQUE ET FORMER AINSI UN FILM MAGNETIQUE A FORTE ROTATION FARADAY, UTILISABLE DANS DES DISPOSITIFS D'AFFICHAGE ET DE TELECOPIE. THIS MAGNETIC MATERIAL MEETS THE FORMULA: (CF DRAWING IN BOPI) IN WHICH M REPRESENTS EITHER ONE OR MORE RARE EARTH ELEMENTS CHOSEN FROM LUTETIUM, THULIUM, YTTERBIUM, OR YTTRIUM AND X, X, Y AND Y ARE SUCH AS: 0X1.5; 0X0.5; 0Y1; 0Y1; PROVIDED THAT Y AND Y ARE NOT ALL TWO EQUAL TO 0 AND THAT Y Y IS AT THE MOST EQUAL TO 1. IT CAN BE DEPOSITED BY EPITAXY IN LIQUID PHASE ON A TRANSPARENT NON-MAGNETIC SUBSTRATE AND THUS FORM A MAGNETIC FILM WITH HIGH ROTATION FARADAY, FOR USE IN DISPLAY AND FAX DEVICES.

LIGHT EMITTING / RECEIVING DIODES AND INTEGRATED NON-RECIPROCAL OPTICAL TRANSMISSION ELEMENTS AND THEIR MANUFACTURING METHOD

DEVICE FOR READING THE INFORMATION RECORDED ON A MAGNETIC MEDIA

L'invention concerne la reproduction d'un enregistrement magnétique. Un appareil de lecture optique de l'information enregistrée sur une bande magnétique 11 comprend essentiellement un dispositif de lecture 12 qui produit une rotation de la polarisation d'un faisceau lumineux en fonction de l'information qui est enregistrée sur la bande 11. Un polariseur 17 et un transducteur photoélectrique 18 détectant les variations de polarisation et fournissent un signal de sortie correspondant sur la borne 19. Application à l'enregistrement des signaux sonores. The invention relates to the reproduction of a magnetic recording. An apparatus for optically reading information recorded on a magnetic tape 11 essentially comprises a reading device 12 which produces a rotation of the polarization of a light beam according to the information which is recorded on the tape 11. A polarizer 17 and a photoelectric transducer 18 detecting variations in polarization and supply a corresponding output signal on terminal 19. Application to the recording of sound signals.

SHEET COMPOSITE MAGNETIC MATERIAL AND METHOD FOR MANUFACTURING SAME.

The invention relates to a composite magnetic sheet material comprising at least one thin support film of polymer, which is mechanically and thermally resistant, coated on at least one of its faces with a thin deposit of a ferromagnetic amorphous compound having a magnetic permeability higher than 30, the density d and the permeability of the composite magnetic material being such that 5 </= mu /d </= 100.

FERRITE COMPONENT FOR POWER APPLICATION AND METHOD FOR MANUFACTURING THE COMPONENT

Thin magnetic film memory

Method for obtaining single crystal ferrite films

Manufacturing process for monocrystalline ferrite films

Amorphous soft magnetic thin film

ABSTRACT OF THE DISCLOSURE An improved alloy used in the form of an amorphous soft magnetic thin film having a desirable combination of saturation magnetic flux density and saturation magnetostriction constant, the alloy having the compositional formula: CoxZryPdz wherein: 0.85 ? x ? 0.94 0.04 ? y ? 0.07 0.01 ? z ? 0.10

SELF-POLARIZED MINIATURE HYPERFREQUENCY CIRCULATOR

Le domaine général de l'invention est celui des circulateurs et isolateurs hyperfréquences comportant trois voies métalliques (11, 12) disposées en Y et un noyau central (14) en ferrite. Au moins la partie centrale du substrat est un hexaferrite de baryum et /ou de strontium dont une partie des ions baryum et/ou une partie des ions strontium a été substituée par des ions lanthane et une partie des ions fer a été substituée par des ions cobalt, la formule chimique générale dudit hexaferrite de baryum-strontium étant BaxSryLazFe12-wCowO19, la somme des indices x, y et z étant égale à 1, l'indice x étant compris entre 0 et 1, l'indice y étant compris entre 0 et 1, l'indice z étant compris entre 0 et 0.5 et l'indice w étant compris entre 0.05 et 0.4. The general field of the invention is that of microwave circulators and isolators comprising three metal channels (11, 12) arranged in Y and a central core (14) in ferrite. At least the central part of the substrate is a barium and / or strontium hexaferrite in which a part of the barium ions and / or a part of the strontium ions has been replaced by lanthanum ions and a part of the iron ions has been substituted by ions cobalt, the general chemical formula of said barium-strontium hexaferrite being BaxSryLazFe12-wCowO19, the sum of the indices x, y and z being equal to 1, the index x being between 0 and 1, the index y being between 0 and 1, the index z being between 0 and 0.5 and the index w being between 0.05 and 0.4.

Manufacture of thin magnetic films

Patent FR2303342B1

MAGNETIC COMPOSITE SHEET MATERIAL AND METHOD FOR MANUFACTURING THE SAME.

Thin magnetic film device

Magnetooptical thin-film structure

FIELD: systems of optical processing of information, sensors and converters of magnetic fields. SUBSTANCE: given magnetooptical thin-film structure includes substrate 1 of monocrystal of gadolinium-gallium iron garnet, film 2 deposited on substrate of bismuth-carrying gallium iron garnet with magnetization vector 3 lying in plane of film. Crystallographic axis [ 100 ] 5 of monocrystal of substrate 1 is displaced relative to perpendicular 4 to plane of substrate 1 by angle that does not exceed value of deviation towards crystallographic axis [ 210 ] 6, preferably within limits from 0 to 4 deg. Bismuth-carrying iron garnet is doped with mainly thulium, gadolinium, lutecium or with their combinations. EFFECT: expanded application field and increased functional reliability. 3 dwg 6э0з$ гс ПЧ ГЭ РОССИЙСКОЕ АГЕНТСТВО ПО ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (19) (51) МПК ВИ "” 2138 069 ' 13) Сл С 02Е 1/09 12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ РОССИЙСКОЙ ФЕДЕРАЦИИ (21), (22) Заявка: 96107470/28, 23.04.1996 (46) Дата публикации: 20.09.1999 (56) Ссылки: 1. Зсой С.В. 1ЕЕЁЕ Тгапзасвоп от Мадпейс$. Мо!. МАС-12, М 4, 1976, рр.292 - З10. 2. ТоКзоой м. Тит зойа ЕИт$. \о1.114, М1 -2, 1984, рр.33 - 43. 3. Сиашепт О.М. апа ТитеНу Р.Е. }.АррИ. Ррву$.57(1)15, арг! 1985, рр.3879-3881. 4. Гусев М.Ю. Письма в ЖТФ. Том 14, М 18, с.1659 - 1662. 5. Т.Мхитою @ а!. 1ЕЕЕ ТгапзасНноп$ оп Мадпейс$. Мо|.29, М 6, Моуетрег 1993, рр.3417 - 3419. (98) Адрес для переписки: 129010, Москва, ул.Б.Спасская, д.25, стр.3, "Городисский и Партнеры", Кирюшиной Л.Н. 1988, (71) Заявитель: Гарнетек Лтд. (Саглыес Ша.) (Е) (72) Изобретатель: Ильяшенко Е (И. , Клин В.П., Соловьев А.Г. (73) Патентообладатель: Гарнетек Лтд. (Сагпаес 44.) (Е) (54) МАГНИТООПТИЧЕСКАЯ ТОНКОПЛЕНОЧНАЯ (57) Реферат: Использование: изобретение относится к магнитооптическим структурам, используемым в системах оптической обработки информации, в датчиках и преобразователях магнитных полей. Сущность изобретения: в магнитооптической структуре, содержащей ...

MAGNETO-OPTICAL LIGHT SWITCHING ELEMENT AND METHOD OF MANUFACTURING THE SAME

ELEMENT DE COMMUTATION DE LUMIERE MAGNETO-OPTIQUE MUNI D'ILOTS FORMES A PARTIR D'UNE COUCHE EPITAXIALE A BASE DE GRENAT DE FER-METAL DES TERRES RARES PORTANT, COMME SUBSTITUANT, DU BISMUTH SUR UN SUBSTRAT DE GRENAT OPTIQUEMENT TRANSPARENT NON MAGNETIQUE, DE RESISTANCES DE CHAUFFAGE INTEGREES DISPOSEES SUR LES ILOTS ET D'UNE BOBINE ENFERMANT LES ILOTS, LE SUBSTRAT ETANT ORIENTE DANS LA DIRECTION 100 ET LA BOBINE ETANT UNE BOBINE INTEGREE. APPLICATION: AUX TETES D'IMPRIMANTES MAGNETO-OPTIQUES. MAGNETO-OPTICAL SWITCHING ELEMENT WITH ISLANDS FORMED FROM AN EPITAXIAL LAYER BASED ON RARE-EARTH IRON-METAL GARNET BEARING, AS A SUBSTITUTE, BISMUTH ON AN OPTICALLY TRANSPARENT NON-MAGNETIC GARNATE SUBSTRATE INTEGRATED HEATING SYSTEMS ARRANGED ON THE ISLANDS AND OF A COIL ENCLOSING THE ISLANDS, THE SUBSTRATE BEING ORIENTED IN DIRECTION 100 AND THE COIL BEING AN INTEGRATED COIL. APPLICATION: TO MAGNETO-OPTICAL PRINTER HEADS.

Bismuth-substituted rare-earth iron garnet crystal film and optical isolator

A bismuth-substituted rare-earth iron garnet crystal film (RIG) which has an insertion loss of less than 0.60 dB and which can be produced in a high yield, as well as an optical isolator, which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd 3 (ScGa) 5 O 12 , wherein the bismuth-substituted rare-earth iron garnet crystal film is represented by a chemical formula of La 3-x-y Gd x Bi y Fe 5 O 12 (provided that 0<x<3 and 0<y<3), and a composition ratio between the La, Gd, and Bi falls within a numeric value range corresponding to the inside of a quadrilateral having composition points A, B, C, and D as vertices in a La—Gd—Bi ternary composition diagram: composition point A (La: 0.15, Gd: 1.66, Bi: 1.19), composition point B (La: 0.32, Gd: 1.88, Bi: 0.80), composition point C (La: 0.52, Gd: 1.68, Bi: 0.80), and composition point D (La: 0.35, Gd: 1.46, Bi: 1.19).

Electromagnetic wave shielding material comprising metal ferrite and method for preparing thereof

본 발명은 금속 페라이트를 포함하는 전자기파 차폐 필름 및 이의 제조방법에 관한 것으로, 보다 구체적으로 전자기파 차폐(Electro Magnetic Interference, EMI) 효과를 갖는 고전도성 소재 및 전자기 내성(Electro Magnetic Susceptibility, EMS)을 갖는 자성소재를 포함하여 30 MHz 내지 20 GHz 주파수까지 적용 가능한 전자기파 차폐를 위한 금속 페라이트 입자 및 이의 제조방법에 관한 것이다.

Patent JPS4954307A

Patent JPS522603B2

High efficiency induction coil for receiving electromagnetic wave and electrical power conversion apparatus using its induction coil

본 발명은 패러데이 법칙을 이용하여 유도코일로 시간에 따라 변화하는 전자기파로부터 높은 유도기전력과 일정 이상의 높은 전류를 얻을 수 있는 고효율 전기에너지의 변환을 가능하게 하는 수신용 유도코일의 구조 및 이를 이용한 전력변환장치에 관한 것이다. 보다 구체적으로 본 발명은 다양한 종류의 전기기기, 텔레비전 또는 모니터 등에서 발생하는 전자기파 또는 인의적으로 발생시킨 전자기파를 패러데이 법칙을 이용하여 유도 코일로 무선 전력을 수신함에 있어서 수신부를 이루는 유도코일의 구조를 일체형 솔레노이드 형태가 아닌 여러 개로 등분 분리된 솔레노이드 형태로 병렬로 각각 연결시켜 수신부를 이루는 유도코일을 구성하여 전체 인덕턴스와 저항을 낮게 구성하고, 원통형 보빈에 감은 유도 코일들을 병렬로 각각 연결시켜 구성한 후에 유도 코일 내부에 자성체(페라이트 코어 등)를 삽입하여 상기 유도코일을 병렬 구성함에 의하여 낮아진 인덕턴스 값을 보상하는 형태로 구성하며, 상기와 같이 구성된 수신부의 유도코일로 공기 중에 존재하는 다양한 전자기파 에너지로부터 전압과 전류를 유도하고, 유도 과정에서 발생한 전압 및 전류를 극대화하기 위하여 상기 유도코일과 병렬로 가변 커패시터를 설치하여 공진회로를 구성하며, 상기 구성된 공진회로로부터 유기된 전압 및 전류 신호를 다이오드로 정류한 다음 정류된 신호를 평활 커패시터를 사용하여 평활하여 원하는 크기의 직류 전압 및 전류를 얻어서 충전하여 이를 필요로 하는 전자기기 및 전자 부품의 전원으로 사용할 수 있게 하는데 그 특징이 있다. The present invention provides a structure of a receiving induction coil and a power conversion using the same to enable the conversion of high-efficiency electric energy that can obtain a high induced electromotive force and a predetermined high current from an electromagnetic wave that changes with time by using the Faraday law. Relates to a device. More specifically, the present invention integrates the structure of an induction coil that forms a receiver in receiving wireless power from an induction coil by using Faraday's law or electromagnetic waves generated from various kinds of electric devices, televisions or monitors. Induction coils are formed by connecting each in parallel to form a solenoid divided into several parts instead of solenoids to form a receiving unit.The overall inductance and resistance are lowered, and the induction coils wound on cylindrical bobbins are connected in parallel. A magnetic material (such as a ferrite core) is inserted into the coil to compensate for the inductance value lowered by the parallel configuration of the induction coil. The induction coil of the receiver configured as described above has a voltage and current from various electromagnetic wave energy present ...

Ferrite thin film, method of manufacturing the same and electromagnetic noise suppressor using the same

An electromagnetic noise suppressor including a ferrite film is formed by regularly arranging constituents such as magnetized grains or one analogous to that. In the ferrite film, the constituents have at least one of the uniaxial anisotropy and the multiaxial anisotropy. The ferrite film has the magnetic anisotropy or the magnetic isotropy. The ferrite film is formed by a plating method in the presence of a magnetic field.

Transformer

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Magnetic garnet single crystal and method for producing the same as well as optical element using the same

It is an object of the present invention to provide a magnetic garnet single crystal at a reduced Pb content, and a method for producing the same and an optical element using the same. The object is attained with a magnetic garnet single crystal represented by the chemical formula Bi α Na β M1 3-α-β Fe 5-γ M2 γ O 12 (M1 is at least one element selected from Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and M2 is at least one element selected from Si, Ge and Ti, provided that 0.5<α≦2.0, 0<β≦0.8, 0.2≦3−α−β<2.5, and 0<γ≦1.6).

Biaxially textured articles formed by powder metallurgy

A biaxially textured alloy article having a magnetism less than pure Ni includes a rolled and annealed compacted and sintered powder-metallurgy preform article, the preform article having been formed from a powder mixture selected from the group of mixtures consisting of: at least 60 at % Ni powder and at least one of Cr powder, W powder, V powder, Mo powder, Cu powder, Al powder, Ce powder, YSZ powder, Y powder, Mg powder, and RE powder; the article having a fine and homogeneous grain structure; and having a dominant cube oriented {100}<100> orientation texture; and further having a Curie temperature less than that of pure Ni.

Garnet film for magnetic bubble

MAGNETIC AREA DEVICE

Patent JPH0253936B2

Magnetic bubble devices with controlled temperature characteristics

MAGNETIC BUBBLE DEVICES WITH CONTROLLED TEMPERATURE CHARACTERISTICS Abstract of the Disclosure The temperature variation of the bubble collapse field of a class of garnet magnetic bubble layer materials is selected by control of octahedral site substitution during layer growth. This permits the growth of layers, whose temperature dependence of critical magnetic properties more closely matches the temperature dependence of available bias magnet materials, resulting in extended operating temperature range and/or wider operating margins (with attendant improvement in manufacturing yield). A preferred substitution species is lutetium, known as a dodecahedral site occupant, for which it has been determined that a significant and controllable octahedral occupancy can be produced by suitable choice of growth conditions.

Use of a garnet thin film in a magnetostatic-wave device

Rare earth reduced garnet system and related microwave applications