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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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24-01-2019 дата публикации

Лазерно-плазменный инжектор ионов с динамической электромагнитной фокусировкой ионного пучка

Номер: RU0000186565U1
Автор: Владимир Иванович Турчин
Принадлежит: Федеральное государственное бюджетное учреждение "Институт теоретической и экспериментальной физики имени А.И. Алиханова Национального исследовательского центра "Курчатовский институт"

Предложен лазерно-плазменный инжектор ионов с динамической электромагнитной фокусировкой ионного пучка, состоящий из: лазера, световое излучение которого, попадая на мишень, образует плазму, дрейфующую в пролетном канале, мишени, пролетного канала, на выходе которого установлен датчик тока для измерения токовых и временных параметров плазмы и ионно-оптической системы (ИОС), на электродах которой существуют неизменяющиеся по величине электрические потенциалы. При этом на выходе ИОС установлена периодическая линзовая система, состоящая из трех расположенных вдоль продольной оси ионного пучка собирающих магнитных линз, выполненных в виде соленоидов с экранами. Первый соленоид, считая от ИОС, электрически подключен к генератору импульсов тока линейно изменяющейся величины, который электрически связан с лазером и датчиком тока. Датчик тока установлен в плазме на выходе пролетного канала и электрически связан с входом генератора импульсов тока линейно изменяющейся величины и установлен на выходе пролетного канала перед ИОС, которая осуществляет отбор ионов из плазмы, формирование и дальнейшее ускорение ионного пучка. Второй соленоид, считая от ИОС, электрически подключен к усилителю тока «У», который электрически связан с тем же датчиком тока. Третий, по счету от ИОС, соленоид установлен на выходе периодической линзовой системы и электрически подключен к отдельному источнику электропитания. Этот соленоид позволяет задавать требуемый угол наклона огибающей ионного пучка после компенсации его углового расхождения, связанного с нестабильностью положения плазменной границы эмиссии ионов. Предложенная конструкция позволяет непрерывно осуществлять поэтапную динамическую фокусировку экстрагированного из лазерной плазмы ионного пучка, обладающего большой кинетической энергией движения, при помощи системы отдельно взятых фокусирующих линз. Жесткость фокусировки в первых двух линзах поставлена в зависимость от скорости движения лазерной плазмы в пролетном канале и от изменения ее ...

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Номер записи: 1
05-02-2020 дата публикации

Лазерный генератор ионов

Номер: RU0000195771U1
Автор: Владимир Иванович Турчин
Принадлежит: Федеральное государственное бюджетное учреждение "Институт теоретической и экспериментальной физики имени А.И. Алиханова Национального исследовательского центра "Курчатовский институт"

Полезная модель относится к области ускорительной техники и может быть использована для ускорения ионов различных элементов в ядерной энергетике и технологиях ионной имплантации. Лазерный генератор ионов характеризуется большим временем непрерывной работы и сохранением в процессе работы спектра зарядовых состояний ионов в инжектируемом пучке. Это достигается за счет многократного уменьшения напыления материалов мишени и стенок камеры взаимодействия, образующихся в результате действия на них оптического излучения лазера, на поверхности отражающих зеркал ОКГ.Оригинальность технического решения, предложенного в данной полезной модели, в том, что рабочие зеркала, отражающие и фокусирующие оптическое излучение лазера на мишень, отделены от зоны ионизации и испарения материала мишени и соединяются с этой зоной через апертуру малого диаметра только на время длительности импульса лазерного излучения. Различия в динамике процессов, связанных с кратковременностью импульса лазерного излучения и большой инерционностью разлета в пространстве твердых составляющих материала мишени, позволяют электромагнитному клапану перекрывать пропускное отверстие до момента достижения его основной массой продуктов абляции. Малые размеры апертуры пропускного отверстия, соединяющего камеру взаимодействия с установленной в ней мишенью и оптическую камеру с рабочими зеркалами, способствуют уменьшению количества материалов десорбции, проникающих из зоны ионизации в оптическую камеру. Это способствует сохранению отражающей поверхности зеркал лазерного генератора ионов в рабочем состоянии. 1 рис. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 195 771 U1 (51) МПК H01J 27/10 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК H01J 27/10 (2019.08) (21)(22) Заявка: 2019134674, 29.10.2019 (24) Дата начала отсчета срока действия патента: Дата регистрации: 05.02.2020 Приоритет(ы): (22) Дата подачи заявки: 29.10.2019 (45) Опубликовано: 05.02.2020 Бюл. № 4 1 ...

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Номер записи: 2
20-09-2012 дата публикации

Method for extending lifetime of an ion source

Номер: US20120235058A1
Автор: Ashwini Sinha, Lloyd A. BROWN
Принадлежит: Praxair Technology Inc

This invention relates in part to a method for preventing or reducing the formation and/or accumulation of deposits in an ion source component of an ion implanter used in semiconductor and microelectronic manufacturing. The ion source component includes an ionization chamber and one or more components contained within the ionization chamber. The method involves introducing into the ionization chamber a dopant gas, wherein the dopant gas has a composition sufficient to prevent or reduce the formation of fluorine ions/radicals during ionization. The dopant gas is then ionized under conditions sufficient to prevent or reduce the formation and/or accumulation of deposits on the interior of the ionization chamber and/or on the one or more components contained within the ionization chamber. The deposits adversely impact the normal operation of the ion implanter causing frequent down time and reducing tool utilization.

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Номер записи: 3
04-10-2012 дата публикации

Ion implantation system and method

Номер: US20120252195A1
Автор: Barry Lewis Chambers, Edward E. Jones, Joseph D. Sweeney, Oleg Byl, Peng Zou, Robert Kaim, Sharad N. Yedave, Ying Tang
Принадлежит: Advanced Technology Materials Inc

An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.

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Номер записи: 4
18-10-2012 дата публикации

Encapsulation of Electrodes in Solid Media for use in conjunction with Fluid High Voltage Isolation

Номер: US20120261587A1
Автор: Anthony Graupera, Mark W. Utlaut, N. William Parker, Sean Kellogg
Принадлежит: FEI Co

An inductively-coupled plasma source for a focused charged particle beam system includes a conductive shield that provides improved electrical isolation and reduced capacitive RF coupling and a dielectric fluid that insulates and cools the plasma chamber. The conductive shield may be enclosed in a solid dielectric media. The dielectric fluid may be circulated by a pump or not circulated by a pump. A heat tube can be used to cool the dielectric fluid.

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Номер записи: 5
21-02-2013 дата публикации

System for magnetic shielding

Номер: US20130043414A1
Автор: Alon Rosenthal
Принадлежит: Mapper Lithopraphy IP BV

The invention relates to a system for magnetically shielding a charged particle lithography apparatus. The system comprises a first chamber, a second chamber and a set of two coils. The first chamber has walls comprising a magnetic shielding material, and, at least partially, encloses the charged particle lithography apparatus. The second chamber also has walls comprising a magnetic shielding material, and encloses the first chamber. The set of two coils is disposed in the second chamber on opposing sides of the first chamber. The two coils have a common axis.

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Номер записи: 6
04-04-2013 дата публикации

Transformer-coupled rf source for plasma processing tool

Номер: US20130082599A1
Автор: Kamal Hadidi, Rajesh Dorai
Принадлежит: Varian Semiconductor Equipment Associates Inc

A RF source and method are disclosed which inductively create a plasma within an enclosure without an electric field or with a significantly decreased creation of an electric field. A ferrite material with an insulated wire wrapped around its body is used to efficiently channel the magnetic field through the legs of the ferrite. This magnetic field, which flows between the legs of the ferrite can then be used to create and maintain a plasma. In one embodiment, these legs rest on a dielectric window, such that the magnetic field passes into the chamber. In another embodiment, the legs of the ferrite extend into the processing chamber, thereby further extending the magnetic field into the chamber. This ferrite can be used in conjunction with a PLAD chamber, or an ion source for a traditional beam line ion implantation system.

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Номер записи: 7
02-05-2013 дата публикации

METHODS AND APPARATUS FOR DETECTING NEUTRAL CHEMICAL UNITS VIA NANOSTRUCTURES

Номер: US20130105686A1
Автор: Golovchenko Jene A., Goodsell Anne L., Hau Lene V.
Принадлежит:

Suspended nanotubes are used to capture and ionize neutral chemical units, such as individual atoms, molecules, and condensates, with excellent efficiency and sensitivity. Applying a voltage to the nanotube(s) (with respect to a grounding surface) creates an attractive potential between a polarizable neutral chemical unit and the nanotube that varies as 1/r2, where r is the unit's distance from the nanotube. An atom approaching the nanotube with a sub-threshold angular momentum is captured by the potential and eventually spirals towards the nanotube. The atom ionizes as in comes into close proximity with a sidewall of the nanotube, creating an ion whose polarity matches the polarity of the electric potential of the nanotube. Repulsive forces eject the ion, which can be detected more easily than a neutral chemical unit. Suspended nanotubes can be used to detect small numbers of neutral chemical units (e.g., single atoms) for applications in sensing and interferometry. 1. A method of ionizing a neutral chemical unit , the method comprising: A1) capture a neutral chemical unit at a position along a length of the nanostructure within the electric field;', 'A2) ionize the neutral chemical unit at the position along the length of the nanostructure to generate a charged chemical unit; and', 'A3) eject the charged chemical unit from the vicinity of the nanostructure., 'A) applying a charging voltage between a substantially one-dimensional nanostructure and a reference potential to create an electric field in a vicinity of the nanostructure, so as to2. The method of claim 1 , wherein A) comprises applying a charging voltage greater than about 200 V.3. The method of claim 1 , wherein A) comprises selecting the charging voltage such that the electric field is at least about 3 V/nm.4. The method of claim 1 , wherein A) comprises varying the charging voltage as a function of time.5. The method of claim 4 , further comprising detecting the charged chemical unit ejected in A3) as ...

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Номер записи: 8
09-05-2013 дата публикации

AIR CONDITIONER AND ION GENERATION DEVICE

Номер: US20130112299A1
Автор: Kanazawa Yukimasa
Принадлежит: SHARP KABUSHIKI KAISHA

An ion generator is provided with a casing configured to form a flow path for air and an ion generation unit detachably disposed in the casing and configured to discharge ions into the air. The ion generation unit is provided with a front face-side ion generation section and a rear face-side ion generation section which are disposed with a spacing there between, and a connection cover section configured to connect the front face-side ion generation section and the rear face-side ion generation section. One end of the front face-side ion generation section and one end of the rear face-side ion generation section are positioned to be separated from each other in the flow path. The other end of the front face-side ion generation section and the other end of the rear face-side ion generation section are connected to each other by the connection cover section. 1. An air conditioner comprising:a main body section configured to form a flow path for air; andan ion generation device detachably disposed in said main body section and configured to discharge ions into the air circulating in said flow path, whereinsaid ion generation device is provided with a first ion generation section and a second ion generation section which are disposed with a spacing therebetween and are configured to generate ions, and a connection section configured to connect said first ion generation section and said second ion generation section; andsaid first ion generation section and said second ion generation section include one ends which are positioned to be separated from each other in said flow path and the other ends which are connected to each other by said connection section.2. The air conditioner according to claim 1 , whereinsaid main body section includes an inner wall configured to define said flow path, andsaid main body section is formed with a recess section recessed from said inner wall for housing said connection section.3. The air conditioner according to claim 2 , wherein said ...

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Номер записи: 9
16-05-2013 дата публикации

Methods and apparatuses for cleaning at least one surface of an ion source

Номер: US20130118523A1
Автор: John Allison
Принадлежит: Kratos Analytical Ltd

The present invention is concerned with methods and apparatus for cleaning the surface of an ion source in a mass spectrometer, for example an electrode of a MALDI ion source. The method includes directing UV light onto the surface to desorb contaminant material. The UV light source can be a laser and a moving reflecting surface can be used to direct the light on to the surface.

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Номер записи: 10
16-05-2013 дата публикации

Ion Wind Generator and Ion Wind Generating Device

Номер: US20130119264A1
Автор: Makino Hiroshi, Tojyo Tetsuya, Yagi Takashige
Принадлежит: KYOCERA CORPORATION

Provided is an ion wind generator capable of diversifying either or both of the amount of wind or wind direction. An ion wind generator is provided with a first electrode, a second electrode having a downstream area which is arranged at a position in a plan view shifted from first electrode towards the positive side in the x direction, and a dielectric between the first electrode and the second electrode. In a plane view, the distance (d) in the x-direction from a downstream side edge of the first electrode to the downstream side edge of the downstream area differs in the y-direction which is perpendicular to the x-direction. 19-. (canceled)10. An ion wind generator comprising:a first electrode,a second electrode having a downstream area which is arranged at a position in a plan view shifted from the first electrode in a first direction, anda dielectric between the first electrode and the second electrode, wherein,in the plan view, a distance in the first direction from a downstream side edge of the first electrode to the downstream side edge of the downstream area differs in a second direction which is perpendicular to the first direction.11. The ion wind generator as set forth in claim 10 , wherein claim 10 , a length in the first direction of the downstream area is different in the second direction.12. The ion wind generator as set forth in claim 11 , wherein claim 11 , across the downstream side edge of the first electrode or the upstream side edge of the second electrode claim 11 , the downstream side part of the first electrode and the upstream side part of the second electrode overlap or are adjacent in the first direction or the distance between the two in the first direction is constant.13. The ion wind generator as set forth in claim 11 , wherein the downstream area is formed so that its length in the first direction becomes large at the center in the second direction.14. The ion wind generator as set forth in claim 12 , wherein the downstream area is ...

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Номер записи: 11
30-05-2013 дата публикации

Target for generating carbon ions and treatment apparatus using the same

Номер: US20130138184A1
Автор: Hyung Ju Park, Moon Youn Jung, Nam Soo Myung, Seunghwan Kim
Принадлежит: Electronics and Telecommunications Research Institute ETRI

Provided are a carbon ion generation target and a treatment apparatus including the same. The treatment apparatus includes a support member, a carbon ion generation target fixed to the support member, and a laser for irradiating laser beam into the carbon ion generation target to generate carbon ions from the carbon ion generation target, thereby projecting the carbon ions onto a tumor portion of a patient. Here, the carbon ion generation target includes a substrate and carbon thin films disposed on the substrate.

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Номер записи: 12
06-06-2013 дата публикации

MASS SPECTROMETER WITH SOFT IONIZING GLOW DISCHARGE AND CONDITIONER

Номер: US20130140453A1
Автор: Verenchikov Anatoly N., Zamyatin Anatoly
Принадлежит: LECO Corporation

An ion source () for a mass spectrometer comprising an ionizer () receiving an ionizer gas from an ionizer gas supply (), a conditioner () in communication with the ionizer (), a reactor () in communication with the conditioner () and adapted for communication with the mass spectrometer, the reactor () adapted to receive a sample from a sample supply in communication with the reactor (), wherein the conditioner () is sized to remove fast diffusing electrons from a flow of the ionizer gas from the glow discharge ionizer () to the reactor (). 112102. An ion source ( , ) for a mass spectrometer comprising:{'b': 18', '106', '16, 'an ionizer (, ) formatted to receive an ionizer gas from an ionizer gas supply ();'}{'b': 20', '18', '106, 'a conditioner () in communication with the at least one ionizer (, ); and'}{'b': 22', '110', '20', '22', '110', '24', '20', '18', '106', '22', '110, 'a reactor (, ) in communication with the conditioner () and formatted for communication with the mass spectrometer, the reactor (, ) formatted to receive a sample from a sample supply (), wherein the conditioner () is sized to remove fast diffusing electrons from a flow of the ionizer gas between the glow discharge ionizer (, ) and the reactor (, ).'}212102201810622110. The ion source ( claim 1 , ) of claim 1 , wherein the conditioner () is sized to provide a transfer time of the gas flow from the at least one ionizer ( claim 1 , ) to the reactor ( claim 1 , ) of between about 5 ms and about 10 ms.31210220. The ion source ( claim 1 , ) of claim 1 , wherein the conditioner () comprises a tube having a length of about 15 mm and an inner diameter of about 2 mm.412102202018106. The ion source ( claim 1 , ) of claim 1 , wherein the conditioner () comprises a tube and a product of an inner diameter of the conditioner () and a pressure of the at least one ionizer ( claim 1 , ) is at least 50 mm*mbar.512102181062842. The ion source ( claim 1 , ) of claim 1 , wherein the at least one ionizer ( claim ...

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Номер записи: 13
06-06-2013 дата публикации

Automatic Control System for Selection and Optimization of Co-Gas Flow Levels

Номер: US20130140473A1
Автор: Neil K. Colvin, Tseh-Jen Hsieh
Принадлежит: Axcelis Technologies Inc

An ion implantation system for improving performance and extending lifetime of an ion source is disclosed whereby the selection, delivery, optimization and control of the flow rate of a co-gas into an ion source chamber is automatically controlled.

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Номер записи: 14
13-06-2013 дата публикации

ION GENERATING DEVICE AND ELECTRICAL APPARATUS

Номер: US20130146781A1
Автор: Iwashita Yasuhiro, Sekoguchi Yoshinori, Sugano Minako
Принадлежит: SHARP KABUSHIKI KAISHA

An arrangement area of a transformer drive circuit, an arrangement area of a high-voltage transformer, and an arrangement area of an ion generating unit are two-dimensionally divided from each other in a casing. A connection terminal is electrically connected to the transformer drive circuit and is formed of a conductive film arranged to be exposed to the outside of the casing. Accordingly, an ion generating device whose size and thickness can be easily reduced and an electrical apparatus including the ion generating device can be provided. 1. An ion generating device comprising:a transformer drive circuit;a transformer driven by the transformer drive circuit to boost a voltage;an ion generating unit that generates either or both of positive ions and negative ions by receiving the voltage boosted by the transformer; anda casing that houses the transformer drive circuit, the transformer, and the ion generating unit,wherein an arrangement area of the transformer drive circuit, an arrangement area of the transformer, and an arrangement area of the ion generating unit are two-dimensionally divided from each other in the casing, andwherein the ion generating device further comprises a connection terminal that is electrically connected to the transformer drive circuit and formed of a conductive film arranged to be exposed to the outside of the casing.2. The ion generating device according to claim 1 , further comprising:a contact board on which the connection terminal is formed,wherein both ends of the contact board are supported by the casing so that the contact board is attached to the casing.3. The ion generating device according to claim 2 , further comprising:a drive circuit board that supports the transformer drive circuit; andan ion generating unit board that supports the ion generating unit,wherein at least one of the drive circuit board and the ion generating unit board is configured so as to support an inner surface of the contact board at a side opposite an ...

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Номер записи: 15
20-06-2013 дата публикации

NANOPOROUS VACUUM PUMP

Номер: US20130153763A1
Автор: Saint Andrew
Принадлежит: GBC SCIENTIFIC EQUIPMENT PTY. LTD.

The invention provides an element (), comprising: a nanoporous insulating film () (such as a thin nanoporous diamond film) and first and second conducting layers () on first and second opposed sides respectively of the film (). Also provided are a vacuum pump (), an ion source () and an ion trap (), each comprising such an element (). 1. A pump , comprising:a pumping element comprising: a nanoporous insulating film comprising a plurality of nanopores, and first and second conducting layers on first and second opposed sides respectively of said film; anda power supply configured to maintain a potential difference between said first and second conducting layers that produces a field ionizing electric field;wherein said pumping element supports a difference in gas pressure on said first and second conducting layers and supports field ionization by the electric field, and said electric field ionizes gas atoms or molecules in a proximity of said first conducting layer, transports said gas atoms or molecules once ionised through said first conducting layer into said nanopores, along said nanopores and through said second conducting layer.2. A pump as claimed in claim 1 , wherein the difference in gas pressure is one atmosphere.3. A pump as claimed in claim 1 , wherein said electric field is approximately 10 MV/cm.4. A pump as claimed in claim 1 , wherein the insulating film comprises a thin nanoporous diamond film or a thin nanoporous silicon nitride film.5. (canceled)6. A pump as claimed in claim 1 , wherein the first and second conducting layers comprise metallic layers or evaporatively deposited layers metallic layers.7. (canceled)8. An element as claimed in claim 1 , wherein said first and second conducting layers comprise molybdenum or gold.9. A pump as claimed in claim 1 , wherein the power supply is configured to maintain the first conducting layer at a negative potential relative to the second conducting layer.10. A pump as claimed in claim 1 , wherein the ...

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Номер записи: 16
27-06-2013 дата публикации

SWITCHING MICRO-RESONANT STRUCTURES BY MODULATING A BEAM OF CHARGED PARTICLES

Номер: US20130161529A1
Автор: Davidson Mark, Gorrell Jonathan, Maines Michael E.
Принадлежит: ADVANCED PLASMONICS, INC.

When using micro-resonant structures, a resonant structure may be turned on or off (e.g., when a display element is turned on or off in response to a changing image or when a communications switch is turned on or off to send data different data bits). Rather than turning the charged particle beam on and off, the beam may be moved to a position that does not excite the resonant structure, thereby turning off the resonant structure without having to turn off the charged particle beam. In one such embodiment, at least one deflector is placed between a source of charged particles and the resonant structure(s) to be excited. When the resonant structure is to be turned on (i.e., excited), the at least one deflector allows the beam to pass by undeflected. When the resonant structure is to be turned off, the at least one deflector deflects the beam away from the resonant structure by an amount sufficient to prevent the resonant structure from becoming excited. 1. A modulated electromagnetic radiation emitter , comprising:a charged particle generator configured to generate a beam of charged particles;at least one resonant structure configured to resonate at at least one resonant frequency higher than a microwave frequency when exposed to the beam of charged particles, anda director for directing the beam of charged particles away from the at least one resonant structure when the resonant structure is not to resonate.2. The emitter according to claim 1 , wherein the director is one from the group consisting of: a deflector claim 1 , a diffractor claim 1 , or an optical structure.3. The emitter according to claim 1 , wherein the director comprises at least one deflection plate between the charged particle generator and the at least one resonant structure.4. The emitter according to claim 1 , wherein the generator comprises a plurality of charged particle sources.5. The emitter according to claim 1 , wherein the at least one resonant structure comprises at least one silver- ...

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Номер записи: 17
27-06-2013 дата публикации

LASER ION SOURCE

Номер: US20130161530A1
Автор: Hayashi Kazuo, KAKUTANI Akiko, KURUSU Tsutomu, OSANAI Akihiro, SATO Kiyokazu, YOSHIYUKI Takeshi
Принадлежит: KABUSHIKI KAISHA TOSHIBA

According to one embodiment, a laser ion source is configured to generate ions by application of a laser beam, the laser ion source including a case to be evacuated, an irradiation box disposed in the case and including a target which generates ions by irradiation of laser light, an ion beam extraction mechanism which electrostatically extracts ions from the irradiation box and guides the ions outside the case as an ion beam, a valve provided to an ion beam outlet of the case, the valve being opened at ion beam emission and being closed at other times, and a shutter provided between the valve and the irradiation box, the shutter being intermittently opened at ion beam emission and being closed at other times. 1. A laser ion source , comprising:a case to be evacuated;an irradiation box disposed in the case and comprising a target which generates ions by irradiation of laser light;an ion beam extraction mechanism which electrostatically extracts ions from the irradiation box and guides the ions outside the case as an ion beam;a valve provided to an ion beam outlet of the case, the valve being opened at ion beam emission and being closed at other times; anda shutter provided between the valve and the irradiation box, the shutter being intermittently opened at ion beam emission and being closed at other times.2. The laser ion source of claim 1 , wherein the ion beam extraction mechanism is an extraction electrode opposed to an ion ejection window of the irradiation box.3. The laser ion source of claim 1 , whereinthe laser light is intermittently emitted by pulse driving, andthe shutter is open for a predetermined period of time in synchronization with a drive pulse of the laser light.4. The laser ion source of claim 1 , whereinan exhaust outlet for vacuum evacuation of the case is provided in an upper surface of the case.5. The laser ion source of claim 4 , whereina blocking plate which covers the exhaust outlet when viewed from the irradiation box is provided at a ...

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Номер записи: 18
11-07-2013 дата публикации

TARGETS FOR GENERATING IONS AND TREATMENT APPARATUSES USING THE TARGETS

Номер: US20130178689A1
Автор: JUNG Moon Youn, KIM Seunghwan, LEE Hwang Woon, PARK Hyung Ju, PARK Seon Hee, PYO Hyeon-Bong, SHIN Dong-Ho
Принадлежит: Electronics and Telecommunications Research Institute

Provided is an ion beam treatment apparatus including the target. The ion beam treatment apparatus includes a substrate having a first surface and a second surface opposed to the first surface, and including a cone type hole decreasing in width from the first surface to the second surface to pass through the substrate, wherein an inner wall of the substrate defining the cone type hole is formed of a metal, an ion generation thin film attached to the second surface to generate ions by a laser beam incident into the cone type hole through the first surface and strengthen, and a laser that emits a laser beam to generate ions from the ion generation thin film and project the ions onto a tumor portion of a patient. The laser beam incident into the cone type hole is focused by the cone type hole and is strengthened. 1. An ion generation target comprising:a substrate having a first surface and a second surface opposed to the first surface, and comprising a cone type hole decreasing in width from the first surface to the second surface to pass through the substrate, wherein an inner wall of the substrate defining the cone type hole is formed of a metal; andan ion generation thin film attached to the second surface of the substrate to generate ions by means of a laser beam incident into the cone type hole through the first surface and strengthen.2. The ion generation target of claim 1 , wherein the substrate comprises a metal material.3. The ion generation target of claim 2 , wherein the metal material comprises silver claim 2 , copper claim 2 , gold claim 2 , or aluminum.4. The ion generation target of claim 1 , wherein the substrate comprises an insulating material.5. The ion generation target of claim 4 , further comprising a cone type metal thin film on an inner surface of the substrate exposed by the cone type hole.6. The ion generation target of claim 5 , wherein the cone type metal thin film comprises silver claim 5 , copper claim 5 , gold claim 5 , or aluminum.7. The ...

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Номер записи: 19
18-07-2013 дата публикации

SWITCHABLE GAS CLUSTER AND ATOMIC ION GUN, AND METHOD OF SURFACE PROCESSING USING THE GUN

Номер: US20130180844A1
Автор: BARNARD Bryan
Принадлежит:

A method of processing one or more surfaces is provided, comprising: providing a switchable ion gun which is switchable between a cluster mode setting for producing an ion beam substantially comprising ionised gas clusters for irradiating a surface and an atomic mode setting for producing an ion beam substantially comprising ionised gas atoms for irradiating a surface; and selectively operating the ion gun in the cluster mode by mass selecting ionised gas clusters using a variable mass selector thereby irradiating a surface substantially with ionised gas clusters or the atomic mode by mass selecting ionised gas atoms using a variable mass selector thereby irradiating a surface substantially with ionised gas atoms. Also provided is a switchable ion gun comprising: a gas expansion nozzle for producing gas clusters; an ionisation chamber for ionising the gas clusters and gas atoms; and a variable (preferably a magnetic sector) mass selector for mass selecting the ionised gas clusters and ionised gas atoms to produce an ion beam variable between substantially comprising ionised gas clusters and substantially comprising ionised gas atoms. Preferably, the gun comprises an electrically floating flight tube for adjusting the energy of the ions whilst within the mass selector. 1. A method of processing one or more surfaces , the method of processing comprising:providing a switchable ion gun which is switchable between a cluster mode setting for producing an ion beam substantially comprising ionised gas clusters for irradiating a surface and an atomic mode setting for producing an ion beam substantially comprising ionised gas atoms for irradiating a surface; andselectively operating the ion gun in the cluster mode by mass selecting ionised gas clusters using a variable mass selector thereby irradiating a surface substantially with ionised gas clusters, or in the atomic mode by mass selecting ionised gas atoms using the variable mass selector thereby irradiating a surface ...

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Номер записи: 20
22-08-2013 дата публикации

ION GENERATING DEVICE

Номер: US20130214173A1
Автор: KATO Kenichi, Kitahira Makoto, Namikawa Akihito, Noda Yoshiyuki, Shikata Kazushi
Принадлежит:

To prevent a reduction in an amount of an ion emission while preventing generation of electromagnetic noise. A high-voltage generating circuit section that supplies a high voltage to an ion generating element that generates ions is housed in a housing, and sealed with filled resin. An emission port for emitting the generated ions is formed in the housing, and an outer surface of the housing except the emission port is covered with a shield case. A passage port communicating with the emission port is formed in the shield case. A periphery of the passage port of the shield case is covered with an electrically insulating covering sheet so that emitted ions do not adhere to the shield case. The ions emitted from the emission port do not adhere to the shield case covered with the covering sheet. 17-. (canceled)8. An ion generating device , wherein a high-voltage generating circuit section that supplies a high voltage to an ion generating element that generates ions is housed in a housing , an emission port for emitting the generated ions is formed in the housing , an outer surface of the housing except the emission port is covered with a shield case , and the shield case is covered with an insulating section so that the emitted ions do not adhere to the shield case.9. The ion generating device according to claim 8 , wherein a passage port communicating with the emission port is formed in the shield case claim 8 , and the insulating section covers a periphery of the passage port.10. The ion generating device according to claim 8 , wherein a passage port communicating with the emission port is formed in the shield case claim 8 , and an end surface of the passage port is covered with the insulating section so as not to be exposed to the emission port.11. The ion generating device according to claim 10 , wherein a rib protruding outward is formed on a peripheral edge of the emission port in the housing claim 10 , and the rib is the insulating section that covers the end ...

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Номер записи: 21
22-08-2013 дата публикации

Liquid metal ion source and secondary ion mass spectrometric method and use thereof

Номер: US20130216427A1
Автор: Andreas Duetting, Felix Kollmer, Peter Hoerster
Принадлежит: ION TOF Tech GmbH

A liquid metal ion source for use in an ion mass spectrometric analysis method contains, on the one hand, a first metal with an atomic weight ≧190 U and, on the other hand, another metal with an atomic weight ≦90 U. One of the two types of ions are filtered out alternately from the primary ion beam and directed onto the target as a mass-pure primary ion beam.

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Номер записи: 22
05-09-2013 дата публикации

METHOD AND APPARATUS FOR A POROUS ELECTROSPRAY EMITTER

Номер: US20130228700A1
Автор: Brikner Natalya Anna, Coffman Chase Spencer, Lozano Paulo C.
Принадлежит: Massachusetts Institute of Technology

An ionic liquid ion source can include a microfabricated body including a base and a tip. The body can be formed of a porous material compatible with at least one of an ionic liquid or room-temperature molten salt. The body can have a pore size gradient that decreases from the base of the body to the tip of the body, such that the at least one of an ionic liquid or room-temperature molten salt is capable of being transported through capillarity from the base to the tip. 1. An ionic liquid ion source comprising:a body comprising a base and a tip and formed of a porous material compatible with at least one of an ionic liquid or room-temperature molten salt; andthe body having a pore size gradient that decreases from the base of the body to the tip of the body, such that the at least one of an ionic liquid or room-temperature molten salt is capable of being transported through capillarity from the base to the tip.2. The ionic liquid ion source of wherein the at least one of an ionic liquid or room-temperature molten salt is capable of being continuously transported through capillarity from the base to the tip.3. The ionic liquid ion source of wherein the body is a cylindrical needle.4. The ionic liquid ion source of wherein the body is a flat ribbon-like needle.5. The ionic liquid ion source of wherein the tip is formed by at least one of chemical wet etching claim 1 , plasma dry etching claim 1 , ion beam milling claim 1 , laser milling claim 1 , chemical vapor deposition claim 1 , physical vapor deposition claim 1 , or nano-bead deposition.6. The ionic liquid ion source of wherein the porous material comprises a dielectric material.7. The ionic liquid ion source of wherein the dielectric material comprises at least one of a ceramic material claim 6 , a glass material or other oxide material.8. The ionic liquid ion source of wherein a radius of curvature of the tip is approximately 1-20 μm.9. An ionic liquid ion source comprising:a plurality of emitters formed of a ...

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Номер записи: 23
26-09-2013 дата публикации

Method and Apparatus for Actively Monitoring an Inductively-Coupled Plasma Ion Source using an Optical Spectrometer

Номер: US20130250293A1
Автор: Anthony Graupera, Doug Kinion, Mark W. Utlaut, N. William Parker, Philip Brundage, Sean Kellogg, Shouyin Zhang
Принадлежит: FEI Co

A method and apparatus for actively monitoring conditions of a plasma source for adjustment and control of the source and to detect the presence of unwanted contaminant species in a plasma reaction chamber. Preferred embodiments include a spectrometer used to quantify components of the plasma. A system controller is provided that uses feedback loops based on spectral analysis of the plasma to regulate the ion composition of the plasma source. The system also provides endpointing means based on spectral analysis to determine when cleaning of the plasma source is completed.

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Номер записи: 24
03-10-2013 дата публикации

TARGET FOR GENERATING ION AND TREATMENT APPARATUS USING THE SAME

Номер: US20130261369A1
Автор: JUNG Moon Youn, KIM Seunghwan, SHIN Dong-Ho
Принадлежит: Electronics and Telecommunications Research Institute

Provided are an ion generation target and a treatment apparatus using the same. The treatment apparatus includes an ion generation material generating the ions by incident laser beam, the ion generation material generating a bubble having a hemispheric shape, a support supporting the bubble having the hemispheric shape, a bubble generation member for generating the bubble having the hemispheric shape on the support by using the ion generation material, and a laser radiating laser beam onto a surface of the bubble to generate ions from the ion generation material, thereby projecting the ions onto a tumor portion of a patient. 1. An ion generation target comprising:an ion generation material generating the ions by incident laser beam, the ion generation material generating a bubble having a hemispheric shape; anda support supporting the bubble having the hemispheric shape.2. The ion generation target of claim 1 , wherein the ions are protons or carbon ions.3. The ion generation target of claim 2 , wherein the ions are the protons claim 2 , and the ion generation material is water.4. The ion generation target of claim 2 , wherein the ions are the carbon ions claim 2 , and the ion generation material is oil containing a carbon component.5. The ion generation target of claim 1 , wherein the support is a transparent substrate or a ring type bubble support.6. The ion generation target of claim 1 , wherein a thickness of a membrane of the bubble is adjusted by viscosity of the ion generation material.7. The ion generation target of claim 1 , wherein the ion generation material further comprises graphene powder or graphite powder.8. An ion beam treatment apparatus comprising:an ion generation target comprising an ion generation material generating the ions by incident laser beam, the ion generation material generating a bubble having a hemispheric shape and a support supporting the bubble having the hemispheric shape;a bubble generation member for generating the bubble ...

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Номер записи: 25
10-10-2013 дата публикации

CHARGED PARTICLE EMISSION GUN AND CHARGED PARTICLE RAY APPARATUS

Номер: US20130264496A1
Автор: Arai Noriaki
Принадлежит: HITACHI HIGH-TECHNOLOGIES CORPORATION

Provided is a charged particle emission gun with which cleaning of a tip is possible without stopping the operation of the charged particle emission gun for a long time and without heating the tip. The charged particle emission gun includes a cleaning photo-irradiation apparatus that generates ultraviolet light or infrared light to irradiate a tip, and an optical fiber for guiding the ultraviolet light or the infrared light toward the tip. The cleaning photo-irradiation apparatus generates ultraviolet light or an infrared light with a predetermined wavelength and intensity to desorb a molecule adsorbed on the tip through photon stimulated desorption, or to desorb a molecule adsorbed on the tip through photon stimulated desorption and ionize the desorbed molecule. 1. A charged particle emission gun comprising:a tip;an extracting electrode having a central hole that is coaxial with the tip;an ion collector arranged between the tip and the extracting electrode, the ion collector having a central hole that is coaxial with the tip;a vacuum chamber that accommodates therein the tip, the extracting electrode, and the ion collector;a cooling apparatus for cooling the tip; anda cleaning photo-irradiation apparatus that generates ultraviolet light or infrared light to irradiate the tip.2. The charged particle emission gun according to claim 1 , wherein the cleaning photo-irradiation apparatus has an infrared laser source that generates an infrared laser ray with a peak output on the order of MW/cmand a wavelength of 1 μm or greater.3. The charged particle emission gun according to claim 1 , wherein the cleaning photo-irradiation apparatus has an ultraviolet lamp that generates ultraviolet light with a continuous spectrum of a wavelength of 400 nm or less.4. The charged particle emission gun according to claim 1 , wherein the cleaning photo-irradiation apparatus has an ultraviolet laser source that generates an ultraviolet laser ray with a pulse width on the order of ...

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Номер записи: 26
10-10-2013 дата публикации

System and method of ion neutralization with multiple-zoned plasma flood gun

Номер: US20130264498A1
Автор: Chi-Ming Yang, Chih-Hing HWANG, Chin-Hsiang Lin, Chun-Lin Chang, Wen-Yu Ku
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

An apparatus comprises a plasma flood gun for neutralizing a positive charge buildup on a semiconductor wafer during a process of ion implantation using an ion beam. The plasma flood gun comprises more than two arc chambers, wherein each arc chamber is configured to generate and release electrons into the ion beam in a respective zone adjacent to the semiconductor wafer.

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Номер записи: 27
31-10-2013 дата публикации

ION TRANSFER DEVICE

Номер: US20130284916A1
Автор: Sato Tomoyoshi
Принадлежит: ATONARP INC.

There is provided a transfer device () that transfers ionized substances in a first direction. The transfer device () includes a drift tube () and the drift tube () includes electrode plates () and () constructing an outer wall and a plurality of ring electrodes () disposed inside the tube. The ring electrodes () forms a first AC electric field for linear driving that causes the ionized substances to travel in the first direction that is the axial direction. The electrode plates () and () form an asymmetric second AC electric field that deflects the direction of travel of the ionized substances. 115-. (canceled)16. A transfer device that transfers ionized substances in a first direction , comprising:a plurality of ring-shaped first electrodes disposed in a line in the first direction, regularly reverse a direction of electric fields formed between at least some adjacent electrodes out of the plurality of first electrodes, and form a plurality of first alternating current electric field for linear driving that causes at least some of the ionized substances to travel in the first direction; anda plurality of second electrodes that are disposed outside the plurality of first electrodes, are aligned in a second direction that is perpendicular to the first direction, and form at least part of a flow path of the ionized substances, the plurality of second electrodes forming a common second alternating current electric field in a direction that is perpendicular to the plurality of first alternating current electric fields formed by the plurality of first electrodes and forming the second alternating current electric field that is asymmetric and deflects a direction of travel of the ionized substances in the second direction.17. The transfer device according to claim 16 ,wherein the plurality of second electrodes include two facing electrodes that form a cylindrical flow path and the plurality of first electrodes are disposed along a center axis of the cylindrical flow path ...

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Номер записи: 28
31-10-2013 дата публикации

TARGETS FOR GENERATING IONS AND TREATMENT APPARATUSES INCLUDING THE TARGETS

Номер: US20130289331A1
Автор: JUNG Moon Youn, KIM Seunghwan, MYUNG Nam Soo, PARK Hyung Ju, PYO Hyeon-Bong
Принадлежит: Electronics and Telecommunications Research Institute

Provided are an ion generation target and a treatment apparatus including the target. The treatment apparatus includes a grid having a net shape of nano wires, an ion generation thin film attached to a side of the grid and generating ions by means of an incident laser beam, and a laser for emitting a laser beam into the nano wire of the grid to generate ions from the ion generation thin film and project the ions onto a tumor portion of a patient. The laser beam emitted into the nano wire forms a near field, the intensity of which is higher than that of the laser beam through a nanoplasmonics phenomenon, and the near field emits the ions from the ion generation thin film. 1. An ion generation target comprising;a grid having a net shape of nano wires; andan ion generation thin film attached to a side of the grid and generating ions by means of an incident laser beam.2. The ion generation target of claim 1 , wherein the ion is a proton or a carbon ion.3. The ion generation target of claim 2 , wherein the ion is the proton claim 2 , and the ion generation thin film is formed of a material comprising hydrogen.4. The ion generation target of claim 3 , wherein the material comprising hydrogen is a silicon nitride claim 3 , a silicon oxide claim 3 , or a metal.5. The ion generation target of claim 2 , wherein the ion is the carbon ion claim 2 , and the ion generation thin film comprises graphene.6. The ion generation target of claim 1 , wherein the grid comprises silver claim 1 , copper claim 1 , gold claim 1 , or aluminum.7. The ion generation target of claim 1 , wherein the grid has a line width ranging from tens to hundreds nanometers.8. The ion generation target of claim 1 , further comprising a peripheral frame surrounding a periphery of the grid claim 1 ,wherein the ion generation thin film is attached to the peripheral frame.9. An ion beam treatment apparatus comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the ion generation target of ; and'}a laser for ...

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Номер записи: 29
14-11-2013 дата публикации

Etch remnant removal

Номер: US20130298942A1
Автор: Anchuan Wang, He REN, Nitin K. Ingle
Принадлежит: Applied Materials Inc

Methods of removing residual polymer from vertical walls of a patterned dielectric layer are described. The methods involve the use of a gas phase etch to remove the residual polymer without substantially disturbing the patterned dielectric layer. The gas phase etch may be used on a patterned low-k dielectric layer and may maintain the low dielectric constant of the patterned dielectric layer. The gas phase etch may further avoid stressing the patterned low-k dielectric layer by avoiding the use of liquid etchants whose surface tension can upset delicate low-K features. The gas phase etch may further avoid the formation of solid etch by-products which cars also deform the delicate features.

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Номер записи: 30
21-11-2013 дата публикации

Method and apparatus for cleaning residue from an ion source component

Номер: US20130305989A1
Автор: Aseem K. Srivastava, Glen R. Gilchrist, William F. Divergilio
Принадлежит: Axcelis Technologies Inc

Some techniques disclosed herein facilitate cleaning residue from a molecular beam component. For example, in an exemplary method, a molecular beam is provided along a beam path, causing residue build up on the molecular beam component. To reduce the residue, the molecular beam component is exposed to a hydro-fluorocarbon plasma. Exposure to the hydro-fluorocarbon plasma is ended based on whether a first predetermined condition is met, the first predetermined condition indicative of an extent of removal of the residue. Other methods and systems are also disclosed.

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Номер записи: 31
28-11-2013 дата публикации

EXCITED GAS INJECTION FOR ION IMPLANT CONTROL

Номер: US20130313443A1
Автор: Bassom Neil J., Benveniste Victor, Chaney Craig R., Koo Bon-Woong, Rowland Christopher A., SINCLAIR Frank
Принадлежит: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

An ion source includes an ion chamber housing defining an ion source chamber, the ion chamber housing having a side with a plurality of apertures. The ion source also includes an antechamber housing defining an antechamber. The antechamber housing shares the side with the plurality of apertures with the ion chamber housing. The antechamber housing has an opening to receive a gas from a gas source. The antechamber is configured to transform the gas into an altered state having excited neutrals that is provided through the plurality of apertures into the ion source chamber. 1. An ion source comprising:an ion chamber housing defining an ion source chamber, the ion chamber housing having a side with a plurality of apertures; andan antechamber housing defining an antechamber, the antechamber housing sharing the side with the plurality of apertures with the ion chamber housing, the antechamber housing having an opening to receive a gas from a gas source, wherein the antechamber is configured to transform the gas into an altered state comprising excited neutrals that is provided through the plurality of apertures into the ion source chamber.2. The ion source of claim 1 , further comprising a source magnet positioned proximate the ion source chamber housing and the antechamber housing claim 1 , the source magnet configured to provide a magnetic field for both the ion source chamber and the antechamber.3. The ion source of claim 1 , wherein the ion source chamber comprises a first cathode configured to emit electrons into the ion source chamber that interacts with the gas in the altered state to generate plasma in the ion source chamber.4. The ion source of claim 3 , wherein the antechamber comprises a second cathode configured to emit electrons into the antechamber that interact with the gas to transform the gas into the altered state.5. The ion source of claim 1 , wherein the plurality of apertures has a quantity and dimension to enable the antechamber to operate over an ...

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Номер записи: 32
05-12-2013 дата публикации

IMAGING AND PROCESSING FOR PLASMA ION SOURCE

Номер: US20130320229A1
Автор: Graupera Anthony, Kellogg Sean, Maazouz Mostafa, Miller Tom, Zhang Shouyin
Принадлежит: FEI COMPANY

Applicants have found that energetic neutral particles created by a charged exchange interaction between high energy ions and neutral gas molecules reach the sample in a ion beam system using a plasma source. The energetic neutral create secondary electrons away from the beam impact point. Methods to solve the problem include differentially pumped chambers below the plasma source to reduce the opportunity for the ions to interact with gas. 1. A charged particle beam system comprising:a plasma chamber for containing a plasma;a source electrode for biasing the plasma to a voltage of at least 10,000 V;an extraction electrode for extracting ions from the plasma chamber;a focusing lens for focusing the ions into a beam directed toward the work piece;a sample chamber for containing a work piece, the sample chamber connected to a vacuum pump; anda first intermediary vacuum chamber connected at one end to the plasma chamber and at the other end through a differential pumping aperture to the sample chamber or to one or more additional intermediary vacuum chamber, the first intermediary vacuum chamber connected to a vacuum pump, the first and the one or more additional intermediary vacuum chamber or chambers reducing the collision of the ion beam with neutral gas particles, thereby reducing the creation of energetic neutral particles that impact the work piece.2. The charged particle beam system of further comprising at least one additional intermediary vacuum chamber between the first intermediary vacuum chamber and the sample chamber claim 1 , each of the at least one additional intermediary vacuum chambers connected to a vacuum pump and separated from the preceding and succeeding chambers by differential pumping apertures.3. The charged particle beam system of in which each of the additional intermediary vacuum chamber has a lower pressure than the immediately preceding intermediary vacuum chamber.4. The charged particle beam system of in which each of the additional ...

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Номер записи: 33
12-12-2013 дата публикации

ELECTRON CYCLOTRON RESONANCE ION SOURCE DEVICE

Номер: US20130327954A1
Автор: Delferriere Olivier, Harrault Francis
Принадлежит: Commissariat a'l energie atomique et aux energies alternatives

An electron cyclotron resonance ion source device includes a plasma chamber configured to contain a plasma; a high-frequency system configured to transmit a high-frequency wave into the chamber; a magnetic field generator configured to generate a magnetic field in the chamber; an accelerating tube including an isolating structure and an extraction system, the magnetic field generator for generating a magnetic field being entirely located downstream of the isolating structure. 1. An electron cyclotron resonance ion source device comprising:a plasma chamber configured to contain plasma;a magnetic field generator configured to generate a magnetic field in the plasma chamber, the plasma chamber being at a first potential, the magnetic field generator being at a second potential,a high-frequency system configured to propagate a high-frequency wave into the plasma chamber,an isolating structure including an upstream end that is at the first potential and a downstream end that is at the second potential, the magnetic field generator being arranged downstream from the isolating structure.2. The device according to claim 1 , wherein the isolating structure is disposed around at least one part of the high frequency system.3. The device according to claim 1 , comprising an evacuation sleeve disposed between the magnetic field generator and the isolating structure.4. The device according to claim 1 , comprising an extraction system capable of forming an ion beam at the outlet of the plasma chamber.5. The device according to claim 4 , wherein the extraction system is arranged downstream from the plasma chamber.6. The device according to claim 1 , wherein the plasma chamber includes a downstream side that is perforated by an outlet opening claim 1 , the extraction system comprising a first electrode disposed along the downstream side of the plasma chamber.7. The device according to claim 1 , wherein at least one part of the high frequency system is at the first potential.8. The ...

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Номер записи: 34
19-12-2013 дата публикации

ION GENERATION DEVICE

Номер: US20130336838A1
Автор: WADDELL Charles Houston
Принадлежит:

The present invention provides methods and systems for an ion generation device that includes an elongate housing having a back portion and a pair of side portions extending from the back portion and forming a cavity therein. A conductive portion is disposed within the cavity and connected to a power supply for providing power to the conductive portion. A plurality of tines are engaged to the conductive portion. 1. An ion generation device , comprising:an elongate housing having a back portion and a pair of side portions extending from the back portion and forming a cavity therein;a conductive portion disposed within the cavity and connected to a power supply for providing voltage to the conductive portion; anda plurality of tines engaged to the conductive portion.2. The ion generation device of claim 1 , further comprising an extrusion disposed within the cavity of the housing.3. The ion generation device of claim 1 , wherein the plurality of tines are composed of a polypropylene impregnated with carbon.4. The ion generation device of claim 1 , wherein the tines are composed of a homopolypropylene impregnated with carbon.5. The ion generation device of claim 1 , further comprising an extrusion composed of UL V0 rated plastic having a hollow interior portion for receiving the power supply and conductive portion.6. The ion generation device of claim 1 , further comprising a shelf positioned on the inner portion of each side portion of the housing for receiving a first rib of the extrusion.7. The ion generation device of claim 1 , wherein the tines are spaced an equal distance apart along the length of the conductive portion.8. An ion generation device claim 1 , comprising:an elongate housing having a back portion and a pair of side portions having an interior portion and exterior portion and extending generally perpendicularly from the back portion and forming a cavity therein;an extrusion disposed within the cavity of the housing and having a hollow for receiving a ...

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Номер записи: 35
09-01-2014 дата публикации

LOW TEMPERATURE PLASMA PROBE AND METHODS OF USE THEREOF

Номер: US20140011282A1
Автор: Charipar Nicholas, Cooks Robert Graham, Harper Jason, Ouyang Zheng
Принадлежит: PURDUE RESEARCH FOUNDATION

The present invention generally relates to a low temperature plasma probe for desorbing and ionizing at least one analyte in a sample material and methods of use thereof. In one embodiment, the invention generally relates to a low temperature plasma probe including: a housing having a discharge gas inlet port, a probe tip, two electrodes, and a dielectric barrier, in which the two electrodes are separated by the dielectric barrier, in which application of voltage from a power supply generates a low temperature plasma, and in which the low temperature plasma is propelled out of the discharge region by the electric field and/or the discharge gas flow. 160-. (canceled)61. A low temperature plasma probe , the probe comprising:a hollow body having an open distal end;a discharge gas inlet port coupled to the body such that gas may be injected through the port and into the body; andan electrode at least partially disposed within the body; wherein the probe is configured such that injected gas interacts with the electrode to form a low temperature plasma that is ejected from the distal end of the body.62. The probe according to claim 61 , wherein the electrode is axially centered within the distal end of the body.63. The probe according to claim 61 , further comprising a power supply.64. The probe according to claim 61 , wherein a discharge gas is supplied to the probe through the discharge gas inlet port.65. The probe according to claim 61 , wherein the discharge gas assists in propelling the low temperature plasma out of the probe tip.66. The probe according to claim 61 , wherein the discharge gas is nitrogen.67. The probe according to claim 61 , wherein the probe is operably coupled to a sample stage such that low temperature plasma generated by the probe is directed from the probe to interact with a sample on the sample stage.68. The probe according to claim 66 , wherein a mass analyzer is located distal the sample stage to receive ions generated by the interaction of ...

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Номер записи: 36
13-02-2014 дата публикации

INDUCTIVELY COUPLED PLASMA ION SOURCE WITH MULTIPLE ANTENNAS FOR WIDE ION BEAM

Номер: US20140042337A1
Автор: Bell Edward W., Biloiu Costel, Olson Joseph C., Sieradzki Manny
Принадлежит: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

A wide ion beam source includes a plurality of RF windows arranged in a predetermined relationship, a single plasma chamber disposed on a first side of the plurality of RF windows, a plurality of RF antennas, each RF antenna of the plurality of RF antennas disposed on a second side of a respective RF window of the plurality of RF windows, the second side being opposite the first side, and a plurality of RF sources, each RF source coupled to a respective RF antenna of the plurality of RF antennas, wherein a difference in frequency of a first RF signal produced by a first RF source coupled to a first RF antenna from that of a second RF signal produced by a second RF source coupled to an RF antenna adjacent to the first RF antenna is greater than 10 kHz. 1. A wide ion beam source comprising:a plurality of RF windows arranged in a predetermined relationship;a single plasma chamber disposed on a first side of the plurality of RF windows;a plurality of RF antennas, each RF antenna of the plurality of RF antennas disposed on a second side of a respective RF window of the plurality of RF windows, the second side being opposite the first side; anda plurality of RF sources, each RF source coupled to a respective RF antenna of the plurality of RF antennas, wherein a difference in frequency of a first RF signal produced by a first RF source coupled to a first RF antenna from that of a second RF signal produced by a second RF source coupled to an RF antenna adjacent to the first RF antenna is greater than 10 kHz.2. The wide ion beam source of claim 1 , wherein the difference in frequency is less than 100 kHz.3. The wide ion beam source of claim 1 , wherein the difference in frequency of the first RF signal produced by the first RF source from that of the second RF signal produced by the second RF source is at least 5% and less than 1.0%.4. The wide ion beam source of claim 1 , wherein an end-to-end dimension of the plurality of RF windows is at least two meters.5. The wide ion ...

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Номер записи: 37
27-02-2014 дата публикации

METHOD AND APPARATUS FOR A POROUS ELECTROSPRAY EMITTER

Номер: US20140054809A1
Автор: Arestie Steven Mark, Lozano Paulo C.
Принадлежит: Massachusetts Institute of Technology

An ionic liquid ion source can include a microfabricated body including a base and a tip. The body can be formed of a porous material compatible with at least one of an ionic liquid or room-temperature molten salt. The body can have a pore size gradient that decreases from the base of the body to the tip of the body, such that the at least one of an ionic liquid or room-temperature molten salt is capable of being transported through capillarity from the base to the tip. 1. A method of forming one or more emitter bodies made of porous ceramic xerogel comprising:preparing a gel solution comprising a solvent, an acidic aluminum salt, a polymer, and a proton scavenger;providing a mold for one or more emitter bodies, each emitter body of the one or more emitter bodies comprising a base and a tip;pouring the gel solution into the mold;drying the gel solution in the mold to form the one or more emitter bodies made from the porous ceramic xerogel.2. The method of further comprising:mixing aluminum chloride hexahydrate, polyethylene oxide, water, ethanol, and propylene oxide to form the gel solution.3. The method of further comprising:mixing 1 part by mass of polyethylene oxide, 50 parts by mass water, 54.4 parts by mass ethanol, 54.4 parts by mass propylene oxide, and 54 parts by mass of aluminum chloride hexahydrate to form the gel solution.4. The method of further comprising:forming the mold from one or more of polydimethylsiloxane (PDMS), polytetrafluoroethylene (PTFE), polymers, fluoropolymers, paraffin wax, silica, glass, aluminum, and stainless steel.5. The method of claim 1 , wherein the porous ceramic xerogel is alumina xerorgel.6. The method of claim 1 , wherein the porous ceramic xerogel comprises pores approximately 3-5 μm in diameter.7. A method of forming one or more emitter bodies made from porous ceramic material comprising:preparing a slurry of at least silica, water, and a ceramic component;providing a mold for one or more emitter bodies, each emitter body ...

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Номер записи: 38
06-03-2014 дата публикации

SILICON-CONTAINING DOPANT COMPOSITIONS, SYSTEMS AND METHODS OF USE THEREOF FOR IMPROVING ION BEAM CURRENT AND PERFORMANCE DURING SILICON ION IMPLANTATION

Номер: US20140061501A1
Автор: Brown Lloyd Anthony, Campeau Serge Marius, Sinha Ashwini K.
Принадлежит:

A novel composition, system and method thereof for improving beam current during silicon ion implantation are provided. The silicon ion implant process involves utilizing a first silicon-based co-species and a second species. The second species is selected to have an ionization cross-section higher than that of the first silicon-based species at an operating arc voltage of an ion source utilized during generation and implantation of active silicon ions species. The active silicon ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated solely from SiF4. 1. A dopant gas composition comprising:a silicon-based dopant gas composition comprising a first silicon-based species and a second species, wherein said second species is selected to have a ionization cross-section higher than that of the first silicon-based species at an operating arc voltage of an ion source utilized during generation and implantation of active silicon ions;wherein said silicon-based dopant gas composition improves the ion beam current so as to maintain or increase beam current without degradation of said ion source in comparison to a beam current generated from silicon tetrafluoride (SiF4).2. The dopant gas composition of claim 1 , wherein said first silicon-based species is selected from the group consisting of SiH2Cl2 claim 1 , Si2H6 claim 1 , SiH4 SiF2H2 claim 1 , SiF4 and any combination thereof.3. The dopant composition of claim 1 , wherein said first silicon-based species is SiF4.4. The dopant composition of claim 1 , wherein said first silicon-based species is SiF4 and the second species is disilane (S2H6).5. The dopant composition of claim 4 , wherein said S2H6 has a concentration of less than 50% based on the overall volume of said composition.6. The dopant composition of claim 5 , wherein said S2H6 has a concentration of about 10% or less.7. A system ...

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Номер записи: 39
06-03-2014 дата публикации

SYSTEMS AND METHODS FOR MONITORING FAULTS, ANOMALIES, AND OTHER CHARACTERISTICS OF A SWITCHED MODE ION ENERGY DISTRIBUTION SYSTEM

Номер: US20140062495A1
Автор: Brouk Victor, Carter Daniel, HOFFMAN DANIEL J.
Принадлежит: ADVANCED ENERGY INDUSTRIES, INC.

Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis. 1. A system for monitoring of a plasma processing chamber , the system comprising:a plasma processing chamber configured to contain a plasma;a substrate support positioned within the plasma processing chamber and disposed to support a substrate,an ion-energy control portion, the ion-energy control portion provides at least one ion-energy control signal responsive to at least one ion-energy distribution setting that is indicative of a desired ion energy distribution at the surface of the substrate;a switch-mode power supply coupled to the substrate support and the ion-energy control portion, the switch-mode power supply including one or more switching components configured to apply power to the substrate as a periodic voltage function;an ion current compensation component coupled to the substrate support, the ion current compensation component adding an ion compensation current to the periodic voltage function to form a modified periodic voltage function; anda controller coupled to the substrate support, the controller determining an ion current in the plasma processing chamber from the ion compensation current and comparing the ion current to a reference current waveform.2. The system of claim 1 , wherein the controller compares the modified periodic voltage function to a reference voltage waveform.3. ...

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Номер записи: 40
20-03-2014 дата публикации

ION GENERATION APPARATUS AND ELECTRIC EQUIPMENT USING THE SAME

Номер: US20140077701A1
Автор: Nishida Hiromu
Принадлежит: SHARP KABUSHIKI KAISHA

In this ion generation apparatus, an induction electrode is formed on a surface of a first printed substrate, a hole is opened on the inside of the induction electrode, a needle electrode is mounted on a second printed substrate, and a tip end portion of the needle electrode is inserted in the hole. Therefore, even if the ion generation apparatus is placed in a high-humidity environment with dust accumulating on the first and the second printed substrates, the ion generation apparatus can prevent a current from leaking between the needle electrode and the induction electrode. 1. An ion generation apparatus generating ions including an induction electrode and a needle electrode , comprising:a first substrate having a hole opened therein; anda second substrate provided to face one surface of said first substrate,said induction electrode being provided around said hole in said first substrate,said needle electrode having a base end portion provided in said second substrate, and a tip end portion inserted in said hole.2. The ion generation apparatus according to claim 1 , further comprising a lid member provided to cover another surface of said first substrate and having a cylindrical boss at a position corresponding to said hole claim 1 , whereinsaid boss is inserted in said hole, and said needle electrode is inserted in said boss.3. The ion generation apparatus according to claim 2 , wherein the tip end portion of said needle electrode penetrates through said boss and protrudes from said lid member.4. The ion generation apparatus according to claim 1 , wherein said induction electrode is annularly formed around said hole in said first substrate.5. The ion generation apparatus according to claim 1 , whereinsaid first substrate is a printed substrate, andsaid induction electrode is formed of a wiring layer of said printed substrate.6. Electric equipment claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the ion generation apparatus according to ; ...

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Номер записи: 41
27-03-2014 дата публикации

Cluster beam generating apparatus, substrate processing apparatus, cluster beam generating method, and substrate processing method

Номер: US20140083976A1
Автор: Isao Yamada, Masaki Narushima, Noriaki Toyoda
Принадлежит: Tokyo Electron Ltd

A cluster beam generating method that generates a cluster beam includes steps of mixing a gas source material and a liquid source material in a mixer; supplying a cluster beam including clusters originating from the gas source material and clusters originating from the liquid source material that are mixed in the mixer from a nozzle; and adjusting a temperature of the nozzle using a temperature adjusting portion that adjusts a temperature of the nozzle, thereby controlling a ratio of the clusters originating from the gas source material and the clusters originating from the liquid source material in the cluster beam.

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Номер записи: 42
07-01-2016 дата публикации

Apparatus For Dynamic Temperature Control Of An Ion Source

Номер: US20160005564A1
Автор: Bassom Neil J., Chaney Craig R., Lee William Davis
Принадлежит:

An apparatus for controlling the temperature of an ion source is disclosed. The ion source includes a plurality of walls defining a chamber in which ions are generated. To control the temperature of the ion source, one or more heat shields is disposed exterior to the chamber. The heat shields are made of high temperature and/or refractory material designed to reflect heat back toward the ion source. In a first position, these heat shields are disposed to reflect a first amount of heat back toward the ion source. In a second position, these heat shields are disposed to reflect a lesser second amount of heat back toward the ion source. In some embodiments, the heat shields may be disposed in one or more intermediate positions, located between the first and second positions. 1. An apparatus comprising:an ion source having a plurality of walls defining a chamber; anda movable heat shield disposed outside the chamber and proximate at least one of the walls, where the movable heat shield has a first position where a first amount of heat is reflected back toward the chamber and a second position where a second amount of heat is reflected back toward the chamber, the second amount of heat being less than the first amount of heat.2. The apparatus of claim 1 , wherein the plurality of walls comprises a bottom wall claim 1 , a top wall with an aperture claim 1 , two end walls and two side walls claim 1 , where a cathode is disposed proximate one of the two end walls claim 1 , and wherein the movable heat shield is disposed proximate one of the two end walls.3. The apparatus of claim 2 , wherein the movable heat shield moves in a direction parallel to a plane of a first of the two end walls and in the first position claim 2 , the movable heat shield overlaps a portion of a first end wall claim 2 , and in the second position claim 2 , the movable heat shield overlaps a smaller portion of the first end wall.4. The apparatus of claim 2 , wherein the movable heat shield rotates ...

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Номер записи: 43
13-01-2022 дата публикации

SINGLE BEAM PLASMA SOURCE

Номер: US20220013324A1
Автор: FAN Qi Hua
Принадлежит: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY

A single beam plasma or ion source apparatus, including multiple and different power sources, is provided. An aspect of the present apparatus and method employs simultaneous excitation of an ion source by DC and AC, or DC and RF power supplies. Another aspect employs an ion source including multiple magnets and magnetic shunts arranged in a generally E cross-sectional shape. 1. An ion source apparatus comprising:(a) an anode comprising at least one magnetic conductor and an open plasma area being located within a hollow central area of the anode;(b) a cathode comprising a cap having an outlet opening therethough;(c) a direct current power source connected to the anode;(d) an alternating current or radio frequency power source connected to the anode; and(e) ionization operably occurring within the plasma area inside the anode at least partially due to excitation by the direct and alternating current power sources.2. The apparatus of claim 1 , wherein the at least one magnetic conductor comprises multiple magnets or magnetic shunts which create a magnetic flux with a central dip in an open space wherein the plasma is created.3. The apparatus of claim 2 , wherein the magnets or magnetic shunts are arranged in a substantially E cross-sectional shape claim 2 , and with a body or the cap of the cathode being a magnetic metal.4. The apparatus of claim 1 , wherein:the cap of the cathode is magnetic and removable;the cap is isolated from a body of the anode which surrounds the at least one magnetic conductor of the anode; andan ion source discharge voltage is between 1-10 volts.5. The apparatus of claim 1 , further comprising:a sputtering source acted upon by ions emitted through the outlet opening; anda vacuum chamber within which is located the anode and the cathode, the chamber having an operating pressure of 1 mTorr to 500 mTorr.6. The apparatus of claim 1 , further comprising ions emitted through the outlet opening performing cleaning or evaporation deposition of thin ...

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Номер записи: 44
04-01-2018 дата публикации

Vaporizer For Ion Source

Номер: US20180005793A1
Автор: Chaney Craig R., Sporleder David P.
Принадлежит:

A vaporizer with several novel features to prevent vapor condensation and the clogging of the nozzle is disclosed. The vaporizer is designed such that there is an increase in temperature along the path that the vapor travels as it flows from the crucible to the arc chamber. The vaporizer uses a nested architecture, where the crucible is installed within an outer housing. Vapor leaving the crucible exits through an aperture and travels along the volume between the crucible and the outer housing to the nozzle, where it flows to the arc chamber. In certain embodiments, the aperture in the crucible is disposed at a location where liquid in the crucible cannot reach the aperture. 1. A vaporizer , comprising:a crucible in which a dopant material may be disposed, having an aperture passing through a sidewall of the crucible;an outer housing surrounding the crucible;a vapor channel disposed between the outer housing and the crucible, wherein the aperture is in communication with the vapor channel; anda gas nozzle attached to one end of the outer housing in communication with the vapor channel.2. The vaporizer of claim 1 , wherein the crucible and the outer housing are concentric cylinders.3. The vaporizer of claim 1 , comprising a heat source disposed outside of the outer housing.4. The vaporizer of claim 1 , comprising a heat source embedded in the outer housing.5. The vaporizer of claim 1 , wherein a temperature in the vapor channel is greater than a temperature in the crucible.6. The vaporizer of claim 1 , wherein the aperture is disposed in a location so that liquid in the crucible cannot reach the aperture.7. The vaporizer of claim 1 , wherein vapor travels in a path from the crucible through the aperture into the vapor channel and to the gas nozzle claim 1 , and wherein a temperature is increasing as the vapor flows along the path from the aperture to the gas nozzle.8. The vaporizer of claim 1 , comprising a spacer disposed between the crucible and the outer housing ...

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Номер записи: 45
07-01-2021 дата публикации

GeH4/Ar Plasma Chemistry For Ion Implant Productivity Enhancement

Номер: US20210005416A1
Автор: Carbone Nunzio V., Deegan Mervyn, Ewing Peter, Johnson Ronald, Koo Bon-Woong, Sarajlic Ajdin
Принадлежит:

A method for improving the beam current for certain ion beams, and particularly germanium and argon, is disclosed. The use of argon as a second gas has been shown to improve the ionization of germane, allowing the formation of a germanium ion beam of sufficient beam current without the use of a halogen. Additionally, the use of germane as a second gas has been shown to improve the beam current of an argon ion beam. 1. A method of generating an argon ion beam , comprising:introducing germane and argon into an ion source;ionizing the germane and argon to form a plasma; andextracting argon ions from the ion source to form the argon ion beam, wherein a flow rate of germane is between 0.35 and 1.00 sccm.2. The method of claim 1 , wherein the ion source comprises an indirectly heated cathode ion source.3. The method of claim 1 , wherein the ion source comprises an RF ion source.4. The method of claim 1 , wherein the ion source comprises a Bernas source claim 1 , a capacitively coupled plasma source claim 1 , an inductively coupled source claim 1 , or a microwave coupled plasma source.5. The method of claim 1 , wherein no halogen gasses are introduced into the ion source.6. The method of claim 1 , wherein the ion source is a component of a beam-line implantation system.7. A method of generating an argon ion beam claim 1 , comprising:introducing germane and argon into an ion source;ionizing the germane and argon to form a plasma; and extracting argon ions from the ion source to form the argon ion beam,wherein a flow rate of germane is such that a beam current of the argon ion beam is increased at least 10% relative to an argon ion beam generated without use of germane at a same extraction current.8. The method of claim 7 , wherein a flow rate of germane is such that a beam current of the argon ion beam is increased at least 15% relative to the argon ion beam generated without use of germane at a same extraction current.9. The method of claim 7 , wherein no halogen gasses ...

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Номер записи: 46
04-01-2018 дата публикации

ION TO NEUTRAL CONTROL FOR WAFER PROCESSING WITH DUAL PLASMA SOURCE REACTOR

Номер: US20180005852A1
Автор: Dhindsa Rajinder, Hudson Eric A., Marakhtanov Alexei, Nam Sang Ki
Принадлежит:

The disclosed techniques relate to methods and apparatus for etching a substrate. A plate assembly divides a reaction chamber into a lower and upper sub-chamber. The plate assembly includes an upper and lower plate having apertures therethrough. When the apertures in the upper and lower plates are aligned, ions and neutral species may travel through the plate assembly into the lower sub-chamber. When the apertures are not aligned, ions are prevented from passing through the assembly while neutral species are much less affected. Thus, the ratio of ion flux:neutral flux may be tuned by controlling the amount of area over which the apertures are aligned. In certain embodiments, one plate of the plate assembly is implemented as a series of concentric, independently movable injection control rings. Further, in some embodiments, the upper sub-chamber is implemented as a series of concentric plasma zones separated by walls of insulating material. 1. A plate assembly for a reaction chamber comprising a plasma source , the plate assembly comprising:a first plate; anda second plate comprising at least two substantially concentric plate sections that are independently rotatable with respect to the first plate, wherein the first plate and second plate have apertures extending through the thickness of each plate, and wherein the first plate and second plate are substantially parallel and vertically aligned with one another such that either (i) the first plate is above the second plate, or (ii) the first plate is below the second plate.2. The plate assembly of claim 1 , wherein the second plate comprises at least three substantially concentric plate sections.30204. The plate assembly of claim 1 , wherein at least some of the apertures in at least one of the plates of the plate assembly have an aspect ratio between about .-..4. The plate assembly of claim 1 , wherein at least one of the plates of the plate assembly has an open area between about 40-60%.5. The plate assembly of ...

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Номер записи: 47
03-01-2019 дата публикации

ANTENNA ARRANGEMENT

Номер: US20190006142A1
Автор: STAUBER Siegfried
Принадлежит:

An antenna arrangement on a printed circuit board with at least two magnetic rings and a rectangular ring cross section and lateral magnetic ring surfaces with opposite polarity formed thereby wherein the magnetic ring surfaces are arranged on the printed circuit board with a distance from one another using a spacer, wherein the opposite polarities of the magnetic ring surfaces are oriented towards each other and the central bore holes of the magnetic ring form a pass through bore hole through a bore hole in the spacer. This antenna arrangement is configured for a material detector device which detecting predetermined materials over a distance. The antenna arrangement is infinitely expandable in its operation by increasing the number of the magnetic rings and of the respective spacers. Being compact the antenna arrangement easily integrates into existing devices and can be produced in a cost effective manner. 1. An antenna arrangement for a material detecting device for locating objects made from a particular predeterminable material by emitting an ion beam and receiving a returning ion beam that is reflected by the object , wherein properties of the material to be detected cause a reflection of the ion beam , the antenna arrangement comprising:a printed circuit board at least configured for receiving electronic circuits and components of an antenna circuit; andan antenna and electrical connection conductors to the antenna,wherein the antenna emits and receives the ion beam and the antenna circuit generates a transmission signal and processes a return signal,wherein the antenna includes at least two magnetic rings with a rectangular ring cross section and lateral magnetic ring surfaces thus formed with opposite polarity forming electrodes which are arranged on the printed circuit board by at least one spacer including a bore hole at a distance from one another,wherein opposite polarities of the magnetic ring surfaces are oriented towards one another and the central ...

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Номер записи: 48
03-01-2019 дата публикации

APPARATUS AND TECHNIQUES TO TREAT SUBSTRATES USING DIRECTIONAL PLASMA AND POINT OF USE CHEMISTRY

Номер: US20190006149A1
Автор: Biloiu Costel, Campbell Christopher, Gilchrist Glen, Hertel Richard John, Kontos Alex, Liang Shurong, Singh Vikram
Принадлежит: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

In one embodiment, an apparatus to treat a substrate may include an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate. The plasma beam may comprise ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; and a gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber. 1. A method of treating a substrate , comprising:extracting a plasma beam from a plasma, wherein the plasma beam comprises ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; anddirecting a reactive gas from a gas source to the substrate, wherein the reactive gas does not pass through the plasma.2. The method of claim 1 , wherein the directing the reactive gas comprises providing a gas comprising a polar molecule to the substrate claim 1 , wherein the ions are inert gas ions that sputter etch a metal species from a metal layer disposed on the substrate claim 1 , and wherein the polar molecule forms a volatile etch product with the metal species.3. The method of claim 2 , wherein the directing the reactive gas comprises forming a conformal coating derived from the reactive gas on the metal layer.4. The method of claim 2 , wherein the substrate comprises at least one surface feature having a sidewall claim 2 , wherein the reactive gas and plasma beam etch the metal layer without redeposition of material from the metal layer on the sidewall.5. The method of claim 2 , wherein the reactive gas comprises a polar molecule claim 2 , wherein the metal comprises at least one of Ta claim 2 , Pt claim 2 , Ru claim 2 , Ti claim 2 , Cu claim 2 , Fe claim 2 , and Co.6. A method of treating a substrate claim 2 , comprising:extracting a plasma beam from a plasma in a ...

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Номер записи: 49
03-01-2019 дата публикации

SILICON GERMANIUM SELECTIVE OXIDATION PROCESS

Номер: US20190006175A1
Автор: TJANDRA Agus Sofian
Принадлежит:

Implementations described herein relate to selective oxidation processes for semiconductor device manufacturing. In one implementation, the process includes delivering a substrate having a semiconductor device comprising at least a silicon material and a silicon germanium material formed thereon to a process chamber. Process variables are determined based upon the germanium concentration of the silicon germanium material and a desired oxide thickness and a selective oxidation process is performed utilizing the determined process variables. 1. A selective oxidation method , comprising:heating a process region of a process chamber to a temperature less than about 700° C.;generating reactive species comprising hydrogen and oxygen in the process region; andexposing a substrate comprising at least a silicon material and a silicon germanium material to the reactive species to selectively oxidize the silicon germanium material preferentially to the silicon material.2. The method of claim 1 , wherein the silicon material and the silicon germanium material are simultaneously exposed to the reactive species.3216. The method of claim 2 , wherein the silicon germanium material is selectively oxidized at a rate of between times and times greater than an oxidation rate of the silicon material.4. The method of claim 1 , wherein the reactive species are hydroxyl radicals.5. The method of claim 1 , wherein the reactive species are hydroxide ions.6. The method of claim 1 , wherein the reactive species are hydrogen and oxygen radicals.7. The method of claim 1 , wherein the reactive species are hydrogen and oxygen ions.8. The method of claim 1 , wherein a ratio of oxygen to hydrogen is between 19:1 and 1:9.9. The method of claim 1 , further comprising:generating hydroxyl radicals remotely from the process chamber and delivering the hydroxyl radicals to the process region.10. The method of claim 1 , further comprising:generating hydrogen and oxygen radicals remotely from the process ...

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Номер записи: 50
08-01-2015 дата публикации

CHARGED PARTICLE BEAM SYSTEM AND METHOD OF OPERATING A CHARGED PARTICLE BEAM SYSTEM

Номер: US20150008332A1
Автор: Groholski Alexander, Hill Raymond, Huang Weijie, IV John A., McVey Shawn, Notte, Rahman FHM-Faridur
Принадлежит:

The present disclosure relates to a gas field ion source having a gun housing, an electrically conductive gun can base attached to the gun housing, an inner tube mounted to the gun can base, the inner tube being made of an electrically isolating ceramic, an electrically conductive tip attached to the inner tube, an outer tube mounted to the gun can base, the outer tube being made of an electrically isolating ceramic, and an extractor electrode attached to the outer tube. The extractor electrode can have an opening for the passage of ions generated in proximity to the electrically conductive tip. 1. A gas field ion source , comprising:a gun housing,an electrically conductive gun can base attached to the gun housing,an inner tube mounted to the gun can base, the inner tube comprising an electrically isolating material,an electrically conductive tip attached to the inner tube,an outer tube mounted to the gun can base, the outer tube comprising an electrically isolating material, andan extractor electrode attached to the outer tube, the extractor electrode having an opening for the passage of ions generated in proximity to the electrically conductive tip.2. The gas field ion source of claim 1 , further comprising a gas supply comprising a terminating tube attached to the gun can base.3. The gas field ion source of claim 2 , wherein the gas supply is configured to supply a first gas in a first mode of operation of the gas field ion source claim 2 , the gas supply is configured to supply a second gas in a second mode of operation claim 2 , and the first gas is different from the second gas.4. The gas field ion source of claim 2 , further comprising a vacuum pump operatively connected to the outer housing claim 2 , wherein the vacuum pump is configured to evacuate gas out of the outer housing.5. The gas field ion source of claim 1 , further comprising a thermal conductor connected to gun can base claim 1 , wherein the thermal conductor is thermally connected to a cooling ...

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Номер записи: 51
08-01-2015 дата публикации

Charged Particle Beam System and Method of Operating a Charged Particle Beam System

Номер: US20150008333A1
Автор: Huang Weijie, IV John A., McVey Shawn, Notte, Rahman FHM-Faridur
Принадлежит:

The disclosure relates to a method of operating a gas field ion beam system in which the gas field ion beam system comprises an external housing, an internal housing, arranged within the external housing, an electrically conductive tip arranged within the internal housing, a gas supply for supplying one or more gases to the internal housing, the gas supply having a tube terminating within the internal housing, and an extractor electrode having a hole to permit ions generated in the neighborhood of the tip to pass through the hole into the external housing. The method comprises the step of regularly heating the external housing, the internal housing, the electrically conductive tip, the tube and the extractor electrode to a temperature of above 100° C. 1. A method , comprising: an external housing,', 'an internal housing within the external housing,', 'an electrically conductive tip within the internal housing,', 'a gas supply configured to supply a gas to the internal housing, the gas supply comprising a tube terminating within the internal housing, and', 'an extractor electrode having a hole configured to permit ions generated in the neighborhood of the tip to pass through the hole into the external housing, and, 'providing a gas field ion beam system, comprisingregularly heating the external housing, the internal housing, the electrically conductive tip, the tube and the extractor electrode to a temperature above 100° C.2. The method of claim 1 , wherein claim 1 , after heating the external housing claim 1 , the internal housing claim 1 , the electrically conductive tip claim 1 , the tube and the extractor electrode claim 1 , continuing to heat the electrically conductive tip while cooling the internal housing claim 1 , the tube and the extractor electrode to a cryogenic temperature.3. The method of claim 2 , further comprising cooling the external housing to room temperature before cooling the internal housing claim 2 , the tube and the extractor electrode to ...

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Номер записи: 52
08-01-2015 дата публикации

CHARGED PARTICLE BEAM SYSTEM AND METHOD OF OPERATING A CHARGED PARTICLE BEAM SYSTEM

Номер: US20150008341A1
Автор: Conners Robert, DiManna Mark D., Groholski Alexander, Hill Raymond, IV John A., Notte
Принадлежит:

The present disclosure relates to a charged particle beam system, comprising a noble gas field ion beam source, a charged particle beam column, and a housing defining a first vacuum region and a second vacuum region. A noble gas field ion beam source is arranged within the first vacuum region. A first mechanical vacuum pump is functionally attached to the first vacuum region, an ion getter pump is attached to the charged particle beam column, and a gas supply is attached to the first vacuum region configured to supply a noble gas to the noble gas field ion beam source. 1. A charged particle beam system , comprising:a noble gas field ion beam source,a charged particle beam column,a housing defining a first vacuum region and a second vacuum region,a mechanical vacuum pump operationally attached to the first vacuum region,an ion getter pump attached to the charged particle beam column, anda gas supply attached to the first vacuum region,wherein the noble gas field ion beam source is arranged within the first vacuum region, and the gas supply is configured to supply a noble gas to the noble gas field ion beam source.2. The charged particle beam system of claim 1 , further comprising a sample chamber adjacent to the first vacuum region claim 1 , wherein the charged particle beam column is positioned between the first vacuum region and the sample chamber.3. The charged particle beam system of claim 1 , further comprising a control configured to switch-off the ion getter pump at times when the noble gas field ion beam source generates an ion beam.4. The charged particle beam system of claim 3 , wherein the control is configured to switch-on the ion getter pump only if a pressure within the first vacuum region is below a predefined pressure value.5. The charged particle beam system of claim 1 , further comprising:a heater, anda control configured to heat the heater to release atoms of the noble gas from the ion getter pump.6. The charged particle beam system of claim 1 , ...

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Номер записи: 53
08-01-2015 дата публикации

CHARGED PARTICLE BEAM SYSTEM AND METHOD OF OPERATING A CHARGED PARTICLE BEAM SYSTEM

Номер: US20150008342A1
Автор: Conners Robert, DiManna Mark D., Groholski Alexander, Hill Raymond, IV John A., Notte
Принадлежит:

The present disclosure relates to a charged particle beam system comprising a charged particle beam source, a charged particle column, a sample chamber, a plurality of electrically powered devices arranged within or at either one of the charged particle column, the charged particle beam source and the sample chamber, and at least one first converter to convert an electrical AC voltage power into an electrical DC voltage. The first converter is positioned at a distance from either of the charged particle beam source, the charged particle column and the charged particle chamber, and all elements of the plurality of electrically powered devices, when operated during operation of the charged particle beam source, are configured to be exclusively powered by the DC voltage provided by the converter. 1. A charged particle beam system , comprising:a charged particle beam source,a charged particle column,a sample chamber,a plurality of electrically powered devices arranged within or at a member selected from the group consisting of the charged particle column, the charged particle beam source and the sample chamber,a first converter configured to convert an electrical AC voltage power into an electrical DC voltage, the first converter is positioned at a distance from a member selected from the group consisting of the charged particle beam source, the charged particle column and the charged particle chamber, and', 'all elements of the plurality of electrically powered devices are configured so that, when operated during operation of the charged particle beam source, they are exclusively powered by the DC voltage provided by the converter., 'wherein2. The charged particle beam system of claim 1 , wherein a smallest distance between the first converter and each of the charged particle beam source claim 1 , the charged particle column claim 1 , and the sample chamber is at least 2 meters.3. The charged particle beam system of claim 1 , further comprising a second converter ...

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Номер записи: 54
15-01-2015 дата публикации

SWITCHABLE ION GUN WITH IMPROVED GAS INLET ARRANGEMENT

Номер: US20150014275A1
Автор: BARNARD Bryan
Принадлежит:

A switchable ion gun switchable between a cluster mode setting for producing an ion beam substantially comprising ionised gas clusters and an atomic mode setting for producing an ion beam substantially comprising ionised gas atoms, comprising: 1. A switchable ion gun switchable between a cluster mode setting for producing an ion beam substantially comprising ionised gas clusters and an atomic mode setting for producing an ion beam substantially comprising ionised gas atoms , comprising:a source chamber having a first gas inlet;a gas expansion nozzle for producing gas clusters in the presence of gas atoms by expansion of a gas from the source chamber through the nozzle;an ionisation chamber for ionising the gas clusters and gas atoms; wherein the ionisation chamber has a second gas inlet for admitting gas directly into the ionisation chamber to form ionised gas atoms; anda variable mass selector for mass selecting the ionised gas clusters and ionised gas atoms to produce an ion beam variable between substantially comprising ionised gas clusters and substantially comprising ionised gas atoms.2. A switchable ion gun as claimed in wherein the first and second gas inlets are controlled to allow gas through only one of the inlets at a time claim 1 , wherein the first inlet is operated to allow gas through in the cluster mode and the second inlet is operated to allow gas through directly into the ionisation chamber in the atomic mode.3. A switchable ion gun as claimed in wherein the variable mass selector is a magnetic sector or a Wien filter.4. A switchable ion gun as claimed in wherein the variable mass selector comprises a magnetic variable mass selector and an electrically floating ion optical device for adjusting the energy of the ions within the magnetic variable mass selector.5. A switchable ion gun as claimed in wherein the electrically floating ion optical device comprises an electrically floating flight tube and wherein the magnetic variable mass selector ...

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Номер записи: 55
15-01-2015 дата публикации

IONIZATION PROBE ASSEMBLIES

Номер: US20150014548A1
Автор: Bare Rex O., Drader Jared J., Gleason Paul J., Gutierrez Jose R., Hannis James C., Hofstadler Steven A., Nathanson Jared, Smith Jeffrey C.
Принадлежит:

The invention relates generally to sample ionization, and provides ionization probe assemblies, systems, computer program products, and methods useful for this purpose. 140.-. (canceled)41. An ionization probe assembly , comprising:at least one ion source housing back plate that comprises one or more surfaces that define at least one spray orifice, which ion source housing back plate is configured to operably connect to an ion source housing;at least one probe support structure coupled to the ion source housing back plate via at least one linear slide;at least one probe substantially fixedly mounted on the probe support structure; and,at least one probe conveyance mechanism operably connected to the probe support structure, which probe conveyance mechanism is configured to convey the probe between at least a first position and a second position, wherein the first position is substantially electrically isolated from the second position.42. (canceled)43. An ionization probe assembly , comprising:at least one ion source housing back plate that comprises one or more surfaces that define at least one spray orifice, which ion source housing back plate is configured to operably connect to an ion source housing;at least one probe movably coupled to the ion source housing back plate via at least one pivot mechanism; and,at least one probe conveyance mechanism that comprises at least one motor operably connected to the pivot mechanism via a pulley and belt drive assembly, which probe conveyance mechanism is configured to selectively convey the probe between at least a first position and a second position, wherein the first position is substantially electrically isolated from the second position.4449.-. (canceled)50. A method of spraying sample aliquots into an ion source housing of a molecular mass measurement system , the method comprising:(a) conveying a first probe from a first rinse position to a first spray position of the molecular mass measurement system, wherein the ...

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Номер записи: 56
14-01-2016 дата публикации

ION IMPLANTER AND METHOD OF CONTROLLING THE SAME

Номер: US20160013014A1
Автор: Kagawa Tadanobu, Kurose Takeshi, Yumiyama Toshio
Принадлежит:

An ion implanter includes a high-voltage power supply, a control unit that generates a command signal controlling an output voltage of the high-voltage power supply, an electrode unit to which the output voltage is applied, and a measurement unit that measures an actual voltage applied to the electrode unit. The control unit includes a first generation section that generates a first command signal for allowing the high-voltage power supply to output a target voltage, a second generation section that generates a second command signal for complementing the first command signal so that the actual voltage measured by the measurement unit becomes or close to the target voltage, and a command section that brings to the high-voltage power supply a synthetics command signal which is produced by synthesizing the first command signal and the second command signal. 1. An ion implanter comprising:a high-voltage power supply;a control unit that generates a command signal controlling an output voltage of the high-voltage power supply;an electrode unit to which the output voltage is applied; anda measurement unit that measures an actual voltage applied to the electrode unit,whereinthe control unit includes:a first generation section that generates a first command signal for allowing the high-voltage power supply to output a target voltage;a second generation section that generates a second command signal for complementing the first command signal so that the actual voltage measured by the measurement unit becomes the target voltage or a voltage close to the target voltage; anda command section that brings to the high-voltage power supply a synthetic command signal which is produced by synthesizing the first command signal and the second command signal.2. The ion implanter according to claim 1 , whereineach of the first generation section and the second generation section includes a D/A (Digital to Analog) converter that converts a digital command value into an analog command ...

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Номер записи: 57
11-01-2018 дата публикации

ION BEAM SYSTEM

Номер: US20180012726A1
Автор: Kawanami Yoshimi, Matsubara Shinichi, Shichi Hiroyasu
Принадлежит:

Provided is an ion beam system including a gas field ionization ion source which can obtain a high current sufficient for processing and stabilize an ion beam current. The ion beam system includes a gas field ionization ion source which includes: a vacuum vessel; an emitter tip holder disposed in the vacuum vessel; an emitter tip connected to the emitter tip holder; an extraction electrode opposed to the emitter tip; a gas supply portion for supplying a gas to the emitter tip; and a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder. The cold transfer member has its surface covered with a heat insulating material in order to prevent the gas condensation. 1. An ion beam system comprising: a gas field ionization ion source which includes: a vacuum vessel; an emitter tip holder disposed in the vacuum vessel; an emitter tip connected to the emitter tip holder; an extraction electrode opposed to the emitter tip; a gas supply portion for supplying a gas to the emitter tip; and a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder ,wherein the cold transfer member has its surface covered with a heat insulating material in order to prevent condensation of the gas.2. The ion beam system according to claim 1 ,wherein the cold transfer member is a metal thin film or a braided metal wire and has a heat insulating layer adhered to the surface thereof.3. The ion beam system according to claim 1 ,wherein the cold transfer member comprises a metal and the heat insulating material comprises a fluorine resin or ceramics.4. The ion beam system according to claim 1 ,wherein the gas is a gas containing any one of neon, argon, krypton and xenon.5. The ion beam system according to claim 1 ,wherein the gas is a gas containing any one of carbon monoxide, oxygen and nitrogen.6. The ion beam system according to claim 1 ,wherein the gas supply portion supplies a gas mixture of krypton ...

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Номер записи: 58
11-01-2018 дата публикации

CONTINUOUS ION BEAM KINETIC ENERGY DISSIPATER APPARATUS AND METHOD OF USE THEREOF

Номер: US20180012727A1
Автор: Amato Mark R., Lee W. Davis
Принадлежит:

The invention comprises a method and apparatus for slowing positively charged particles, comprising the steps of: (1) transporting the positively charged particles from an accelerator, along a beam transport line, and into a nozzle system; (2) placing a first liquid in a first chamber in a beam path of the positively charged particles; (3) placing a second liquid in a second chamber in the beam path of the positively charged particles; (4) moving the first and second chamber with the nozzle system; (5) slowing the positively charged particles using the first liquid and the second liquid; (6) moving the first chamber in a first direction to yield a longer first pathlength of the positively charged particles through the first chamber; and (7) moving the second chamber opposite the first direction to yield a longer second pathlength of the positively charged particles through the second chamber. 1. An apparatus for reducing positively charged particles , comprising:an accelerator configured to deliver the positively charged particles along a beam transport line into a nozzle system, said nozzle system comprising:a first chamber configured to hold a first liquid in a beam path of the positively charged particles;a second chamber configured to hold a second liquid in the beam path of the positively charged particles; anda computer controlled motor configured to move said first chamber and said second chamber with said nozzle system,wherein the first liquid and the second liquid reduce the kinetic energy of the positively charged particles during use.2. The apparatus of claim 1 , further comprising:a first beam path, comprising a first pathlength, from a beam entrance side of said first chamber to a beam exit side of said first chamber; anda second beam path, comprising a second pathlength, from an incident side of said second chamber to an egress side of said second chamber.3. The apparatus of claim 2 , further comprising:a common fluid reserve tank connected with a ...

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Номер записи: 59
09-01-2020 дата публикации

METHODS FOR INCREASING BEAM CURRENT IN ION IMPLANTATION

Номер: US20200013621A1
Автор: Reinicker Aaron, Sinha Ashwini K
Принадлежит:

The present invention relates to an improved method for increasing a beam current as part of an ion implantation process. The method comprises introducing a dopant source and an assistant species into an ion implanter. A plasma of ions is formed and then extracted from the ion implanter. Non-carbon target ionic species are separated to produce a beam current that is higher in comparison to that generated solely from the dopant source. 1. A method of increasing a beam current for implanting a non-carbon target ionic species , comprising the steps of:introducing a dopant source into an ion implanter from a delivery container;introducing an assistant species into the ion implanter from the delivery container, said assistant species comprising:(i) a lower ionization energy in comparison to an ionization energy of the dopant source;{'sup': '2', '(ii) a total ionization cross-section (TICS) greater than 2 Å;'}(iii) a ratio of bond dissociation energy (BDE) of a weakest bond of the assistant species to the lower ionization energy of the assistant species to be 0.2 or higher; and(iv) an absence of the non-carbon target ionic species;ionizing the assistant species to produce ions of the assistant species;the dopant source interacting with the assistant species whereby the dopant source undergoes assistant species ion-assisted ionization;forming a plasma containing ions;extracting a beam of the ions from the ion implanter;separating the ions to isolate non-carbon target ionic species;producing the beam current of the non-carbon target ionic species that is higher in comparison to that generated solely from the dopant source; andimplanting the non-carbon target ionic species into a substrate.2. The method of claim 1 , wherein the dopant source is in a concentration higher than that of the assistant species.3. The method of claim 1 , further comprising introducing a diluent gas into the ion implanter.4. The method of claim 1 , further comprising:operating at a predetermined arc ...

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Номер записи: 60
03-02-2022 дата публикации

INSULATOR FOR AN ION IMPLANTATION SOURCE

Номер: US20220037115A1
Автор: CHIEN Fang-Chi, JAO Jui-Feng, Lin Sheng-Chi, Lin Tsung-Min, TANG Lung-Yin
Принадлежит:

An insulator for an ion implantation source may provide electrical insulation between high voltage components and relatively lower voltage components of the ion implantation source. To reduce the likelihood of and/or prevent a leakage path forming along the insulator, the insulator may include an internal cavity having a back and forth pattern. The back and forth pattern of the internal cavity increases the mean free path of gas molecules in the ion implantation source and increases the surface area of the insulator that is not directly or outwardly exposed to the gas molecules. This results in a continuous film or coating being more difficult and/or less likely to form along the insulator, which extends the working time of the ion implantation source. 1. An insulator for an ion implantation source , comprising: a first plurality of guide walls,', 'a first plurality of channels formed by the first plurality of guide walls,', 'a core member; and, 'a first portion, comprising a second plurality of guide walls, and', 'wherein a combination of the first plurality of guide walls, the first plurality of channels, the second plurality of guide walls, and the second plurality of channels form a third channel to the core member when the core member is at least partially inserted into the second portion.', 'a second plurality of channels formed by the second plurality of guide walls,'}], 'a second portion, comprising2. The insulator of claim 1 , wherein the first plurality of guide walls are a first plurality of concentric guide walls;wherein the first plurality of channels are a first plurality of concentric channels;wherein the second plurality of guide walls are a second plurality of concentric guide walls; andwherein the second plurality of channels are a second plurality of concentric channels.3. The insulator of claim 1 , wherein the third channel is formed when at least a subset of the first plurality of guide walls are at least partially inserted into at least a ...

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Номер записи: 61
17-04-2014 дата публикации

ION GENERATION APPARATUS AND ELECTRIC EQUIPMENT USING THE SAME

Номер: US20140103793A1
Автор: IZU Koichi, Nishida Hiromu
Принадлежит: SHARP KABUSHIKI KAISHA

In this ion generation apparatus, tip end portions of needle electrodes are aligned in an X direction with being oriented in a Z direction, and protrude from a casing. A protective cover covers the tip end portions of the needle electrodes. The protective cover is provided with holes opened to allow tip ends of the needle electrodes to be seen from the Z direction, and an opening opened to allow the needle electrodes to be seen from a Y direction. Therefore, ions generated at the tip end portions of the needle electrodes can be emitted efficiently out of the casing. Further, a user can be prevented from touching the tip end portion of the needle electrode and injuring his or her finger or the like. 1. An ion generation apparatus generating ions including a plurality of needle electrodes , comprising:a substrate having said plurality of needle electrodes mounted thereon;a casing accommodating said substrate, said plurality of needle electrodes having tip end portions aligned in an X direction with being oriented in a Z direction, and protruding from said casing; anda protective cover covering the tip end portions of said plurality of needle electrodes,said protective cover being provided with a plurality of first holes opened to allow tip ends of said plurality of needle electrodes to be seen from the Z direction, respectively, and a first opening opened to allow said plurality of needle electrodes to be seen from a Y direction.2. The ion generation apparatus according to claim 1 , further comprising a lid member closing said casing so as to cover said substrate claim 1 , whereinsaid lid member is provided with a second hole opened at a position corresponding to each needle electrode, a top plate provided to face said lid member and having said plurality of first holes opened therein, and', 'support members provided between said top plate and said lid member and having said first opening opened therein, and, 'said protective cover includes'}the tip end portion of ...

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Номер записи: 62
18-01-2018 дата публикации

CHARGED PARTICLE INSTRUMENTS

Номер: US20180019095A1
Автор: PETO Lloyd
Принадлежит:

An apparatus is disclosed for use in a charged particle instrument which defines an inner volume therein. The apparatus comprises an adaptor () having a first portion adapted for attachment to a part () of a gas injection system () of a charged particle instrument which is located within an inner volume of such an instrument; and a second portion arranged to receive a tool () adapted for interaction with a sample () located in the inner volume of such an instrument. 1. An adaptor for attachment to a nozzle of a gas injection system provided in an inner volume of a charged particle instrument , the adaptor having a first portion adapted for releasable attachment to a nozzle of a gas injection system of a charged particle instrument , which part nozzle is located within an inner volume of such an instrument , and is operable to provide a gas injection function for the charge particle instrument concerned; and a second portion adapted to receive a tool adapted for interaction with a sample located in the inner volume of such an instrument , wherein the adaptor provides the tool within the inner volume in addition to the nozzle of such a gas injection system without the provision of further additional apparatus within the inner volume.2. A sample interaction apparatus for a charged particle instrument which defines an inner volume therein , the apparatus comprising: an adaptor having a first portion adapted for releasable attachment to a nozzle of a gas injection system of a charged particle instrument , which nozzle is located within an inner volume of such an instrument , and is operable to provide a gas injection function for the charge particle instrument concerned; and a tool attached to a second portion of the adaptor , the tool being adapted for interaction with a sample located in the inner volume of such an instrument , wherein the adaptor provides the tool within the inner volume in addition to the nozzle of such a gas injection system without the provision of ...

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Номер записи: 63
22-01-2015 дата публикации

METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT

Номер: US20150021473A1
Автор: Vandermeulen Peter F.
Принадлежит:

An apparatus for separating ions having different mass or charge includes a waveguide conduit coupled to a microwave source for transmitting microwaves through openings in the waveguide conduit. The outlet ends of pipes are positioned at the openings for transporting material from a material source to the openings. A plasma chamber is in communication with the waveguide tube through the openings. The plasma chamber receives through the openings microwaves from the waveguide tube and material from the pipes. The plasma chamber includes magnets disposed in an outer wall thereof for forming a magnetic field in the plasma chamber. The plasma chamber includes a charged cover at a side of the chamber opposite the side containing the openings. The cover includes extraction holes through which ion beams from the plasma chamber are extracted. Deflectors coupled to one of the extraction holes receive the ion beams extracted from the plasma chamber. Each deflector bends an ion beam and provides separate passages for capturing ions following different trajectories from the bending of the ion beam based on their respective mass or charge. 1. An apparatus for separating ions having different mass or charge , comprising:a waveguide conduit having a plurality of openings therein, said waveguide conduit being coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of openings;one or more pipes having an outlet end positioned at each of the plurality of openings for transporting material from a material source to the plurality of openings;a plasma chamber in communication with the waveguide tube through the plurality of openings, said plasma chamber receiving through said plurality of openings microwaves from the waveguide tube and material from the one or more pipes, said plasma chamber including a plurality of magnets disposed in an outer wall of the plasma chamber for forming a magnetic field in the plasma chamber, said plasma ...

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Номер записи: 64
16-01-2020 дата публикации

Dynamic Electron Impact Ion Source

Номер: US20200020502A1
Автор: Chen Tong, Welkie David G.
Принадлежит:

An ion source can include a magnetic field generator configured to generate a magnetic field in a direction parallel to a direction of the electron beam and coincident with the electron beam. However, this magnetic field can also influence the path of ionized sample constituents as they pass through and exit the ion source. An ion source can include an electric field generator to compensate for this effect. As an example, the electric field generator can be configured to generate an electric field within the ion source chamber, such that an additional force is imparted on the ionized sample constituents, opposite in direction and substantially equal in magnitude to the force imparted on the ionized sample constituents by the magnetic field. 1. A system comprising: a first input port;', 'a second input port different from the first input port;', 'an exit port;', 'a magnetic field generator configured to generate a magnetic field within the ion source chamber;', 'a first electric field generator configured to generate a first electric field within the ion source chamber;', 'a second electric field generator configured to generate a second electric field within the ion source chamber;, 'an ion source chamber comprising receive gas-phase neutral species through the first input port;', 'receive a flow of electrons through the second input port;', 'guide the electrons through the ion source chamber using the magnetic field generator;', 'generate ions in an ionization region within the ion source chamber through an interaction between the gas-phase neutral species and the electrons; and', 'focus and accelerate at least some of the ions from the ion source chamber through the exit port along an ion beam axis using the first electric field generator;', 'wherein the second electric field generator is configured to reduce or eliminate an influence of the magnetic field on at least some of the ions accelerated from the ion source., 'wherein the ion source chamber is configured, ...

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Номер записи: 65
21-01-2021 дата публикации

ION IMPLANTATION SYSTEM WITH MIXTURE OF ARC CHAMBER MATERIALS

Номер: US20210020402A1
Автор: Byl Oleg, Despres Joseph R., Sweeney Joseph D., Tang Ying, Yedave Sharad N.
Принадлежит:

A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance. 1. An ion implantation system for implanting one or more ionic species into a substrate , the system comprising:a gas source comprising an ionizable gas or gas mixture containing at least one ionizable gas; andan arc chamber comprising at least a first arc chamber material and a second arc chamber material, wherein the first and second arc chamber materials are different,wherein the arc chamber comprises arc chamber walls having interior-plasma facing surfaces and at least one of one or more arc chamber liners, a sputtering target disposed in the arc chamber, or a combination thereof, wherein the first and second arc chamber materials are present in the arc chamber walls, in the one or more arc chamber liners disposed in the arc chamber, a target disposed in the arc chamber, or a combination thereof.2. The system of claim 1 , wherein the arc chamber walls comprise the first arc chamber material claim 1 , the first arc chamber material comprising tungsten claim 1 , and wherein the second arc chamber material includes any one of boron claim 1 , boron nitride claim 1 , boron oxide claim 1 , tungsten boride claim 1 , or boron carbide.3. The system of claim 2 , wherein the second arc chamber material is coated onto or surface graded into claim 2 , a ...

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Номер записи: 66
21-01-2021 дата публикации

Ion generator and ion implanter

Номер: US20210020403A1
Автор: Hiroki Murooka
Принадлежит: Sumitomo Heavy Industries Ion Technology Co Ltd

There is provided an ion generator including a vapor generating chamber for generating a vapor by heating a raw material in which a first solid material which is a single substance of an impurity element and a second solid material which is a compound containing the impurity element are mixed with each other, and a plasma generating chamber for generating a plasma containing ions of the impurity element by using the vapor.

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Номер записи: 67
26-01-2017 дата публикации

ION GENERATING DEVICE WITH ELECTRON CYCLOTRON RESONANCE

Номер: US20170025240A1
Автор: Delferriere Olivier, Harrault Francis, TUSKE Olivier
Принадлежит:

An electron cyclotron resonance ion generator device includes a metal tube subjected to a first potential and pierced by a first cavity forming a plasma chamber intended to contain a plasma; a second cavity forming a waveguide configured to inject a high frequency wave into the plasma chamber, an extraction system including an upstream end connected to the plasma chamber and a downstream end configured to be connected to an ion transport line, the connecting flange being subjected to a second potential, a magnetic field generator, and a ceramic tube in contact with the metal tube, the ceramic tube surrounding the metal tube and at least a part of the extraction system. 1. An electron cyclotron resonance ion generator device comprising: a first cavity forming a plasma chamber configured to contain a plasma;', 'a second cavity connected to the first cavity, the second cavity forming a waveguide configured to inject a high frequency wave into the plasma chamber,, 'a metal tube, the metal tube being intended configured to be placed at a first potential the metal tube being pierced byan extraction system configured to extract ions from the plasma chamber, the extraction system comprising an upstream end connected to the plasma chamber and a downstream end provided with a connecting flange configured to be connected to an ion transport line, the connecting flange being configured to be placed at a second potential different to the first potential,a magnetic field generator configured to generate a magnetic field in the plasma chamber, andan insulating structure configured to insulate electrically the metal tube from the downstream end of the extraction system, the insulating structure comprising a ceramic tube in contact with the metal tube, the ceramic tube surrounding the metal tube and at least a part of the extraction system.2. The device according to claim 1 , wherein the extraction system comprises:a first electrode integral with the metal tube, the first electrode ...

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Номер записи: 68
26-01-2017 дата публикации

APPARATUS AND TECHNIQUES TO TREAT SUBSTRATES USING DIRECTIONAL PLASMA AND POINT OF USE CHEMISTRY

Номер: US20170025252A1
Автор: Biloiu Costel, Campbell Christopher, Gilchrist Glen, Hertel Richard John, Kontos Alex, Liang Shurong, Singh Vikram
Принадлежит:

In one embodiment, an apparatus to treat a substrate may include an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate. The plasma beam may comprise ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; and a gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber. 1. An apparatus to treat a substrate , comprising:an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate, the plasma beam comprising ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; anda gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber.2. The apparatus of claim 1 , wherein the gas outlet system is arranged to deliver the reactive gas to the substrate alongside the plasma beam.3. The apparatus of claim 1 , wherein the extraction plate comprises an extraction aperture having an aperture width along a first direction and an aperture length along a second direction perpendicular to the first direction claim 1 , wherein the aperture width is greater than the aperture length claim 1 , wherein the plasma beam is a ribbon beam claim 1 , and wherein the gas outlet system comprises a plurality of gas orifices claim 1 , wherein the plurality of gas orifices are arranged along a side of the extraction aperture along the first direction.4. The apparatus of claim 1 , wherein the reactive gas comprises a non-dissociated gas.5. The apparatus of claim 1 , wherein the reactive gas comprises methanol claim 1 , ...

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Номер записи: 69
26-01-2017 дата публикации

Selective Processing Of A Workpiece

Номер: US20170025253A1
Автор: Amato Mark R., Lee William Davis, Reno Jillian
Принадлежит:

Systems and methods for the selective processing of a particular portion of a workpiece are disclosed. For example, the outer portion may be processed by directing an ion beam toward a first position on the workpiece, where the ion beam extends beyond the outer edge of the workpiece at two first locations. The workpiece is then rotated relative to the ion beam about its center so that certain regions of the outer portion are exposed to the ion beam. The workpiece is then moved relative to the ion beam to a second position and rotated in the opposite direction so that all regions of the outer portion are exposed to the ion beam. This process may be repeated a plurality of times. The ion beam may perform any process, such as ion implantation, etching or deposition. 1. A method of processing a workpiece , comprising:rotating the workpiece about a center in a first direction while an ion beam is directed toward a first position, where the ion beam extends beyond an outer edge of the workpiece at two first locations and the first position is a predetermined distance from the outer edge of the workpiece, so as to process a portion of an outer portion of the workpiece;moving the workpiece relative to the ion beam so as to direct the ion beam toward a second position on the workpiece, where the ion beam extends beyond an outer edge of the workpiece at two second locations and the second position is the predetermined distance from the outer edge of the workpiece; androtating the workpiece about the center in a second direction, opposite the first direction, while the ion beam is directed toward the second position, so as to process a remainder of the outer portion of the workpiece.2. The method of claim 1 , wherein the workpiece is rotated at least 180° in the first direction and at least 180° in the second direction.3. The method of claim 1 , wherein the ion beam does not impact the workpiece during the moving.4. The method of claim 3 , wherein the ion beam is blocked by a ...

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Номер записи: 70
28-01-2016 дата публикации

Inductively-coupled plasma ion source for use with a focused ion beam column with selectable ions

Номер: US20160027607A1
Автор: Anthony Graupera, Charles Otis
Принадлежит: FEI Co

An inductively coupled plasma source having multiple gases in the plasma chamber provides multiple ion species to a focusing column. A mass filter allows for selection of a specific ion species and rapid changing from one species to another.

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Номер записи: 71
28-01-2016 дата публикации

CLOSED DRIFT MAGNETIC FIELD ION SOURCE APPARATUS CONTAINING SELF-CLEANING ANODE AND A PROCESS FOR SUBSTRATE MODIFICATION THEREWITH

Номер: US20160027608A1
Автор: Madocks John
Принадлежит:

A process for modifying a surface of a substrate is provided that includes supplying electrons to an electrically isolated anode electrode of a closed drift ion source. The anode electrode has an anode electrode charge bias that is positive while other components of the closed drift ion source are electrically grounded or support an electrical float voltage. The electrons encounter a closed drift magnetic field that induces ion formation. Anode contamination is prevented by switching the electrode charge bias to negative in the presence of a gas, a plasma is generated proximal to the anode electrode to clean deposited contaminants from the anode electrode. The electrode charge bias is then returned to positive in the presence of a repeat electron source to induce repeat ion formation to again modify the surface of the substrate. An apparatus for modification of a surface of a substrate by this process is provided. 115-. (canceled)16. An apparatus for deposition of a film onto a surface of a substrate comprising:a first closed drift ion source having an electrically isolated first anode electrode and other components comprising ferromagnetic cathode poles and magnets that form a closed drift magnetic field, said other components being grounded or supporting an electrical float voltage;a power supply for selectively powering said first anode electrode with a charge bias with a positive charge bias duration and a negative charge bias duration; andan electron emitter supplying electrons to said first anode electrode when the first electrode charge bias is positive.17. The apparatus of wherein the closed drift magnetic field passes through at least one of said other components.18. The apparatus of wherein said electron emitter is a second closed drift ion source having a second anode electrode with a second electrode charge bias that is opposite the first electrode charge bias during ion formation and repeat ion formation to support a second closed drift ion source ...

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Номер записи: 72
24-04-2014 дата публикации

ION SOURCE DEVICE AND METHOD FOR PROVIDING ION SOURCE

Номер: US20140110598A1
Автор: DONG CHUNRONG, SHAN LEON, WU LULEI
Принадлежит: Semiconductor Manufacturing International (Shanghai) Corporation

Various embodiments provide an ion source device and a method for providing the ion source. An exemplary ion source device can include an arc chamber, a filament, a reflector, a slit outlet, a source gas inlet, and/or a cleaning gas inlet. The filament can be configured to generate thermo-electrons in the arc chamber. The reflector can be configured to reflect the thermo-electrons back to the arc chamber. The slit outlet can be configured to exit a gaseous material out of the arc chamber. The source gas inlet and the cleaning gas inlet can be located on a same sidewall of the arc chamber configured to respectively introduce an ion source gas and an inert cleaning gas into the arc chamber. 1. An ion source device of an ion implanter , comprising:an arc chamber;a filament located on a first sidewall of the arc chamber and configured to generate thermo-electrons in the arc chamber;a reflector located on a second sidewall of the arc chamber opposite to the first sidewall and configured to reflect the thermo-electrons back to the arc chamber;a slit outlet located on a top of the arc chamber and configured to exit a gaseous material out of the arc chamber;a source gas inlet located on a third sidewall of the arc chamber and configured to introduce an ion source gas into the arc chamber, wherein the third sidewall is between the first sidewall and the second sidewall; anda cleaning gas inlet located on the third sidewall of the arc chamber and configured to introduce an inert cleaning gas into the arc chamber.2. The device of claim 1 , wherein the inert cleaning gas includes argon claim 1 , helium claim 1 , or a combination thereof.3. The device of claim 1 , wherein a straight-line distance between the cleaning gas inlet and the filament is greater than a straight-line distance between the source gas inlet and the filament.4. The device of claim 3 , wherein the straight-line distance between the cleaning gas inlet and the source gas inlet ranges from about 40 mm to about ...

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Номер записи: 73
25-01-2018 дата публикации

Mirror Ion Microscope and Ion Beam Control Method

Номер: US20180025888A1
Автор: Hasegawa Masaki, Kohashi Teruo, Matsubara Shinichi, Shichi Hiroyasu
Принадлежит:

To provide a device particularly including an imaging-type or a projection-type ion detection system, not a scanning type such as in a scanning ion microscope, and capable of performing observation or inspection at high speed with an ultrahigh resolution in a sample observation device using an ion beam. To further provide a device capable of performing observation after surface cleaning, which has been difficult in an electron beam device, or a device capable of observing structures and defects in a depth direction. The device includes a gas field ion source that generates an ion beam, an irradiation optical system that irradiates a sample with the generated ion beam, a potential controller that controls an accelerating voltage of the ion beam and a positive potential to be applied to the sample and an ion detection unit that images or projects ions reflected from the sample as a microscope image, in which the potential controller includes a storage unit storing a first positive potential allowing the ion beam to collide with the sample and a second positive potential for reflecting the ion beam before allowing the ion beam to collide with the sample. Then, the potential controller includes a sputter controller for removing part of a sample surface by setting the first positive potential and an image acquisition controller for obtaining a microscope image by setting the second positive potential. 1. A mirror ion microscope comprising:a gas field ion source that generates an ion beam;an irradiation optical system that irradiates a sample with the generated ion beam;a potential controller that controls an accelerating voltage of the ion beam and a positive potential to be applied to the sample; andan imaging-type or a projection-type ion detection unit that images or projects ions reflected from the sample as a microscope image,wherein the potential controller includes a storage unit storing a first positive potential allowing the ion beam to collide with the sample ...

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Номер записи: 74
29-01-2015 дата публикации

METHODS OF ION SOURCE FABRICATION

Номер: US20150028221A1
Автор: Chun Richard K., Lee Wai Tak
Принадлежит: HAMILTON SUNDSTRAND CORPORATION

A method of ion source fabrication for a mass spectrometer includes simultaneously forming aligned component portions of an ion source using direct metal laser fusing of sequential layers. The method can further include forming the component portions on a base plate made from a ceramic material by applying fused powder to the base plate to build the component portions thereon. 1. A method of ion source fabrication for a mass spectrometer , comprising the steps of:additively forming aligned component portions of an ion source.2. The method of claim 1 , wherein the step of forming further includes direct metal laser fusing of sequential layers.3. The method of claim 2 , wherein the step of forming further includes forming the component portions on a base plate made from a ceramic material.4. The method of claim 3 , wherein the step of forming further includes applying fused powder to the base plate to build the component portions thereon.5. The method of claim 4 , wherein the step of forming further includes welding at least one component portion to the base plate.6. The method of claim 4 , wherein the step of forming further includes coupling at least one component portion to the base plate using screws through a surface of the base plate opposite the component portions.710-. (canceled)11. A method of ion source fabrication for a mass spectrometer claim 4 , comprising the steps of:additively forming aligned component portions of an ion source on a base plate made from a ceramic material.12. The method of claim 11 , wherein the step of forming further includes applying fused powder to the base plate to build the component portions thereon.13. The method of claim 12 , wherein the step of forming further includes welding at least one component portion to the base plate.14. The method of claim 12 , wherein the step of forming further includes coupling at least one component portion to the base plate using screws through a surface of the base plate opposite the component ...

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Номер записи: 75
10-02-2022 дата публикации

MATERIAL RECOVERY SYSTEMS FOR OPTICAL COMPONENTS

Номер: US20220044905A1
Автор: Butaeva Evgeniia, Chen Grace, Delgado Gildardo, Lopez Lopez Gary V., Savee John, Zhuang Vera (Guorong)
Принадлежит:

A material recovery system for an optical component includes a reservoir containing gas and configured to supply a gas flow containing the gas. The material recovery system also includes an ion beam generator disposed on the reservoir and configured to receive the gas flow and to ionize the gas in the gas flow to generate an ion beam. The ion beam is configured to be directed to the optical component to remove at least a portion of a F-containing optical material degraded by exposure to VUV radiation, DUV radiation, and/or photo-contamination. 1. A material recovery system for an optical component having a fluorine (F)-containing optical material which has been exposed to vacuum ultra-violet (VUV) radiation , deep ultra-violet (DUV) radiation and/or photo-contamination , the material recovery system comprising:a reservoir containing a gas and configured to supply a gas flow containing the gas; andan ion beam generator disposed on the reservoir and configured to receive the gas flow and to ionize the gas in the gas flow to generate an ion beam, the ion beam configured to be directed to the optical component to remove at least a portion of the F-containing optical material degraded by exposure to VUV radiation, DUV radiation, and/or photo-contamination.2. The material recovery system of claim 1 , wherein the F-containing optical material is selected from the group consisting of magnesium fluoride (MgF) claim 1 , lanthanum fluoride (LaF) claim 1 , aluminum fluoride (AlF) claim 1 , barium fluoride (BaF) claim 1 , lithium fluoride (LiF) claim 1 , and a combination thereof.3. The material recovery system of claim 1 , wherein the ion beam has a diameter of 10 μm to 100 mm.4. The material recovery system of claim 1 , wherein the gas in the reservoir is an inert gas.5. The material recovery system of claim 1 , wherein the gas in the reservoir contains fluorine.6. The material recovery system of claim 1 , further comprising an XYZ stage removably coupled to the reservoir and ...

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Номер записи: 76
10-02-2022 дата публикации

PLASMA TRANSPORT CHANNEL DEVICE AND COATING EQUIPMENT

Номер: US20220044911A1
Автор: Zhang Xinfeng
Принадлежит:

The present invention relates to a plasma transport channel device and coating equipment, including a channel body. An A channel configured for a transport of a plasma is formed inside the channel body, two ends of the A channel constitute an A inlet and an A outlet, respectively, a cooling unit configured for cooling the channel body is arranged on or beside the channel body, and/or, an adsorption unit configured for adsorbing an impurity component in the plasma is arranged on an inner wall of the channel body. In the present invention, the channel body is cooled by the cooling unit arranged on or beside the channel body, so as to achieve the purpose of heat dissipation and temperature reduction of the channel body. The impurity component in the plasma is adsorbed by the adsorption unit arranged on the inner wall of the channel body, thereby improving the effect. 1. A plasma transport channel device , comprising a channel body , wherein an A channel configured for a transport of a plasma is formed inside the channel body , two ends of the A channel constitute an A inlet and an A outlet , respectively , a cooling unit configured for cooling the channel body is arranged on or beside the channel body , and/or , an adsorption unit configured for adsorbing an impurity component in the plasma is arranged on an inner wall of the channel body.2. The plasma transport channel device according to claim 1 , wherein the cooling unit is formed by an air-cooling device arranged outside the channel body.3. The plasma transport channel device according to claim 1 , wherein the cooling unit is formed by a cooling passage arranged on the channel body claim 1 , and a cooling fluid is contained in the cooling passage.4. The plasma transport channel device according to claim 3 , wherein the cooling passage is arranged on an outer side wall of the channel body.5. The plasma transport channel device according to claim 4 , wherein the cooling passage is formed by an interlayer arranged on ...

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Номер записи: 77
24-01-2019 дата публикации

Method Of Improving Ion Beam Quality In an Implant System

Номер: US20190027341A1
Автор: Bateman Nicholas P.T., Bholse Vikram M., Frontiero John A., Graff John W., Koo Bon-Woong, Miller Timothy J.
Принадлежит:

A method for improving the ion beam quality in an ion implanter is disclosed. In some ion implantation systems, contaminants from the ion source are extracted with the desired ions, introducing contaminants to the workpiece. These contaminants may be impurities in the ion source chamber. This problem is exacerbated when mass analysis of the extracted ion beam is not performed, and is further exaggerated when the desired feedgas includes a halogen. The introduction of a diluent gas in the ion chamber may reduce the deleterious effects of the halogen on the inner surfaces of the chamber, reducing contaminants in the extracted ion beam. In some embodiments, the diluent gas may be germane or silane. 1. A method of implanting dopant into a workpiece , comprising:introducing a first source gas and a second source gas into a chamber of an ion source, said first source gas comprising molecules comprising a dopant and fluoride, wherein said dopant comprises a Group 3 or Group 5 element, and the second source gas comprises molecules comprising hydrogen and a Group 4 element or molecules comprising hydrogen and a species having an opposite conductivity as the dopant;ionizing the first source gas and the second source gas in the chamber, wherein a coating forms on a dielectric window or on an inner surface of the chamber; andextracting ions from the chamber and accelerating the ions toward the workpiece.2. The method of claim 1 , wherein the second source gas comprises molecules comprising hydrogen and a Group 4 element.3. The method of claim 2 , wherein the Group 4 element comprises silicon or germanium.4. The method of claim 1 , wherein the dopant comprises a Group 3 element claim 1 , and the second source gas comprises molecules containing hydrogen and a Group 5 element.5. The method of claim 4 , wherein the Group 3 element comprises boron.6. The method of claim 5 , wherein the Group 5 element comprises phosphorus or arsenic.7. The method of claim 1 , wherein the dopant ...

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Номер записи: 78
05-02-2015 дата публикации

Lifetime ion source

Номер: US20150034837A1
Автор: Bon-Woong Koo, Eric R. Cobb, Richard M. White, William T. Levay
Принадлежит: Varian Semiconductor Equipment Associates Inc

An ion source includes an ion source chamber, a gas source to provide a fluorine-containing gas species to the ion source chamber and a cathode disposed in the ion source chamber configured to emit electrons to generate a plasma within the ion source chamber. The ion source chamber and cathode are comprised of a refractory metal. A phosphide insert is disposed within the ion source chamber and presents an exposed surface area that is configured to generate gas phase phosphorous species when the plasma is present in the ion source chamber, wherein the phosphide component is one of boron phosphide, tungsten phosphide, aluminum phosphide, nickel phosphide, calcium phosphide and indium phosphide.

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Номер записи: 79
02-02-2017 дата публикации

High Brightness Ion Beam Extraction

Номер: US20170032927A1
Автор: Koo Bon-Woong, Likhanskii Alexandre, Radovanov Svetlana B., Renau Anthony
Принадлежит:

An apparatus for the creation of high current ion beams is disclosed. The apparatus includes an ion source, such as a RF ion source or an indirectly heated cathode (IHC) ion source, having an extraction aperture. Disposed proximate the extraction aperture is a bias electrode, which has a hollow center portion that is aligned with the extraction aperture. A magnetic field is created along the perimeter of the hollow center portion, which serves to contain electrons within a confinement region. Electrons in the confinement region energetically collide with neutral particles, increasing the number of ions that are created near the extraction aperture. The magnetic field may be created using two magnets that are embedded in the bias electrode. Alternatively, a single magnet or magnetic coils may be used to create this magnetic field. 1. An apparatus for creating a high current ion beam , comprising:an ion source having an ion source chamber and an extraction aperture;a bias electrode disposed proximate the extraction aperture, having an inner surface defining a perimeter of a hollow center portion that is aligned with the extraction aperture; anda magnetic field disposed along the perimeter of the hollow center portion, creating a confinement region for electrons proximate the inner surface.2. The apparatus of claim 1 , wherein the magnetic field is created by a magnet that surrounds an outer surface of the bias electrode claim 1 , where a first pole of the magnet is oriented toward the ion source chamber and a second pole of the magnet is oriented toward a chamber wall containing the extraction aperture.3. The apparatus of claim 1 , further comprising a first magnet embedded in the bias electrode and oriented with a north pole disposed toward the hollow center portion claim 1 , and a second magnet embedded in the bias electrode and oriented with a south pole disposed toward the hollow center portion claim 1 , wherein the magnetic field is created between the north pole ...

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Номер записи: 80
02-02-2017 дата публикации

Negative Ribbon Ion Beams from Pulsed Plasmas

Номер: US20170032937A1
Автор: Distaso Daniel, Dzengeleski Joseph P., Radovanov Svetlana B.
Принадлежит:

An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an RF ion source, having an extraction aperture. An antenna disposed proximate a dielectric window is energized by a pulsed RF power supply. While the RF power supply is actuated, a plasma containing primarily positive ions and electrons is created. When the RF power supply is deactivated, the plasma transforms into an ion-ion plasma. Negative ions may be extracted from the RF ion source while the RF power supply is deactivated. These negative ions, in the form of a negative ribbon ion beam, may be directed toward a workpiece at a specific incident angle. Further, both a positive ion beam and a negative ion beam may be extracted from the same ion source by pulsing the bias power supply multiple times each period. 1. An apparatus for creating a negative ribbon ion beam , comprising:an ion source having a plurality of chamber walls defining an ion source chamber and having an extraction aperture;an RF antenna disposed proximate one of the plurality of chamber walls of the ion source chamber;an RF power supply in communication with the RF antenna, and outputting a first RF power level for a first time duration to the RF antenna to create a plasma within the ion source chamber from a feed gas and outputting a second RF power level, lower than the first RF power level, for a second time duration; anda bias power supply to create a voltage difference between a plasma disposed in the ion source chamber and a workpiece, such that the bias power supply is pulsed to create the voltage difference during at least a portion of the second time duration, so as to extract the negative ribbon ion beam from the ion source chamber through the extraction aperture.2. The apparatus of claim 1 , wherein at least one of the plurality of chamber walls is electrically conductive and the bias power supply is in communication with electrically conductive chamber walls of the ion source chamber ...

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Номер записи: 81
02-02-2017 дата публикации

CHEMICAL VAPOR DEPOSITION TOOL AND OPERATING METHOD THEREOF

Номер: US20170032940A1
Автор: HUNG Pen-Li, LEE Chien-Ta, SHIH Yu-Shan
Принадлежит:

A chemical vapor deposition (CVD) tool includes a processing chamber, a remote plasma system, a first gas source, a second gas source, a first gas passage and a second gas passage. The remote plasma system is connected to the processing chamber. The first gas passage connects the first gas source, the remote plasma system and the processing chamber. The second gas passage connects the second gas source and the processing chamber, and bypasses the remote plasma system. 1. A chemical vapor deposition (CVD) tool comprising:a processing chamber;a remote plasma system connected to the processing chamber;a first gas source;a second gas source;a first gas passage connecting the first gas source, the remote plasma system, and the processing chamber; anda second gas passage connecting the second gas source and the processing chamber, and bypassing the remote plasma system.2. The CVD tool of claim 1 , wherein the first gas source is a cleaning gas source configured to provide cleaning gas to the remote plasma system through the first gas passage; andwherein the remote plasma system is configured to covert the cleaning gas into a cleaning plasma and then supply the cleaning plasma to the processing chamber through the first gas passage.3. The CVD tool of claim 1 , wherein the second gas source is a processing gas source configured to provide processing gas to the processing chamber through the second gas passage.4. The CVD tool of claim 3 , further comprising:a radio frequency generating device disposed in the processing chamber to energize the processing gas.5. The CVD tool of claim 1 , further comprising:a first valve configured to control a gas flow through the first gas passage.6. The CVD tool of claim 1 , further comprising:a second valve configured to control a gas flow through the second gas passage.7. The CVD tool of claim 1 , further comprising:a gas panel connecting the first gas source and the second gas source, wherein the first gas passage and the second gas ...

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Номер записи: 82
04-02-2016 дата публикации

CHARGED PARTICLE BEAM SPECIMEN INSPECTION SYSTEM AND METHOD FOR OPERATION THEREOF

Номер: US20160035537A1
Автор: Avinun-Kalish Michal, Erel Gilad, LANIO Stefan
Принадлежит:

A charged particle beam specimen inspection system is described. The system includes an emitter for emitting at least one charged particle beam, a specimen support table configured for supporting the specimen, an objective lens for focusing the at least one charged particle beam, a charge control electrode provided between the objective lens and the specimen support table, wherein the charge control electrode has at least one aperture opening for the at least one charged particle beam, and a flood gun configured to emit further charged particles for charging of the specimen, wherein the charge control electrode has a flood gun aperture opening. 1. A charged particle beam specimen inspection system , comprising:an emitter for emitting at least one charged particle beam;a specimen support table configured for supporting a specimen;an objective lens for focusing the at least one charged particle beam;a charge control electrode provided between the objective lens and the specimen support table, wherein the charge control electrode has at least one aperture opening for the at least one charged particle beam; anda flood gun configured to emit further charged particles for charging of the specimen, wherein the charge control electrode has a flood gun aperture opening.2. The charged particle beam specimen inspection system according to claim 1 , wherein the charge control electrode is connected to a first power supply such that the charge control electrode is configured to provide a charge control for a first operation of the flood gun and to provide a charge control for a second operation of the emitter claim 1 , both with the first power supply.3. The charged particle beam specimen inspection system according to claim 1 , further comprising:an objective lens housing surrounding the objective lens and shielding at least one of magnetic fields and electrostatic fields generated near the objective lens, wherein the objective lens housing surrounds at least a portion of the ...

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Номер записи: 83
01-02-2018 дата публикации

CHARGED PARTICLE BEAM APPARATUS

Номер: US20180033587A1
Автор: ENYAMA Momoyo, SHIRASAKI Yasuhiro, Tsuno Natsuki
Принадлежит:

A charged particle beam apparatus includes a charged particle source, a separator, a charged particle beam irradiation switch, and a control device. The separator is inserted into a charged particle optical system and deflects a traveling direction of a charged particle beam out of an optical axis of the charged particle optical system or deflects the traveling direction in the optical axis of the charged particle optical system. The charged particle beam irradiation switch absorbs the charged particle beam deflected out of the optical axis of the charged particle optical system or reflects the charged particle beam toward the separator. The control device controls a charged particle beam irradiation switch. 1. A charged particle beam apparatus , comprising:a charged particle source;a stage on which a sample is placed;a charged particle optical system configured to irradiate the sample with a charged particle beam generated in the charged particle source;a separator which is inserted in the charged particle optical system and deflects a traveling direction of the charged particle beam out of an optical axis of the charged particle optical system or deflects the traveling direction in the optical axis of the charged particle optical system;a charged particle beam irradiation switch configured to absorb the charged particle beam deflected out of the optical axis of the charged particle optical system or reflect the charged particle beam toward the separator, anda control device configured to control the charged particle beam irradiation switch.2. The charged particle beam apparatus according to claim 1 ,wherein, the charged particle beam irradiation switch has a charged particle beam reflection control electrode, and{'sub': 0', 'on', '0', 'off', '0, 'when a voltage such that velocity energy of the charged particle beam traveling in a direction of the charged particle beam reflection control electrode becomes zero is denoted by |V|, the control device controls ...

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Номер записи: 84
01-02-2018 дата публикации

PRESSURE PURGE ETCH METHOD FOR ETCHING COMPLEX 3-D STRUCTURES

Номер: US20180033657A1
Автор: GUHA Joydeep, Park Pilyeon
Принадлежит:

A method for etching a substrate and removing byproducts includes a) setting process parameters of a processing chamber for a selective dry etch process; b) setting process pressure of the processing chamber to a first predetermined pressure in a range from 1 Torr to 10 Torr for the selective dry etch process; c) selectively etching a first film material of a substrate relative to a second film material of the substrate in the processing chamber during a first period; d) lowering pressure in the processing chamber to a second predetermined pressure that is less than the first predetermined pressure by a factor greater than or equal to 4; and e) purging the processing chamber at the second predetermined pressure for a second period. 1. A method for etching a substrate and removing byproducts , the substrate comprising a stack including a plurality of first layers and a plurality of second layers , the first layers alternating with the second layers , the method comprising:a) setting process parameters of a processing chamber for a selective dry etch process;b) setting process pressure of the processing chamber to a first predetermined pressure in a range from 1 Torr to 10 Torr for the selective dry etch process;c) selectively etching portion of one of the first layers relative to one of the second layers in the processing chamber during a first period;d) lowering pressure in the processing chamber to a second predetermined pressure that is less than the first predetermined pressure by a factor greater than or equal to 4 in order to purge the processing chamber at the second predetermined pressure for a second period;e) purging the processing chamber at the second predetermined pressure for the second period: andf) repeating a) through e) or b) through e) N times, where N is an integer greater than one.23-. (canceled)4. The method of claim 1 , further comprising varying at least one of the first predetermined pressure and the first period during at least one of the N ...

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Номер записи: 85
05-02-2015 дата публикации

ALTERNATE MATERIALS AND MIXTURES TO MINIMIZE PHOSPHORUS BUILDUP IN IMPLANT APPLICATIONS

Номер: US20150037511A1
Автор: Ray Richard S.
Принадлежит:

Systems and processes for utilizing phosphorus fluoride in place of or in combination with, phosphine as a phosphorus dopant source composition, to reduce buildup of unwanted phosphorus deposits in ion implanter systems. The phosphorus fluoride may comprise PF3 and/or PF5. Phosphorus fluoride and phosphine may be co-flowed to the ion implanter, or each of such phosphorus dopant source materials can be alternatingly and sequentially flowed separately to the ion implanter, to achieve reduction in unwanted buildup of phosphorus solids in the implanter, relative to a corresponding process system utilizing only phosphine as the phosphorus dopant source material. 130.-. (canceled)31. An ion implantation method , comprising generating phosphorus dopant species , and implanting the phosphorus dopant species in a substrate , wherein the method comprises one of:(i) generating the phosphorus dopant species during a first period of said implanting from a first phosphorus dopant composition, and during a second period of said implanting from a second phosphorus dopant composition, wherein the first and second phosphorus dopant compositions are different from one another; and(ii) generating the phosphorus dopant species from a phosphorus dopant source mixture comprising different phosphorus fluorides.32. The method of claim 31 , wherein the method comprises generating the phosphorus dopant species during a first period of said implanting from a first phosphorus dopant composition claim 31 , and during a second period of said implanting from a second phosphorus dopant composition claim 31 , wherein the first and second phosphorus dopant compositions are different from one another.33. The method of claim 32 , wherein the first phosphorus dopant composition comprises phosphine claim 32 , and the second phosphorus dopant composition comprises PF.34. The method of claim 32 , wherein the first phosphorus dopant composition comprises phosphine claim 32 , and the second phosphorus dopant ...

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Номер записи: 86
09-02-2017 дата публикации

DEVICE FOR FORMING A QUASI-NEUTRAL BEAM OF OPPOSITELY CHARGED PARTICLES

Номер: US20170036785A1
Автор: Aanesland Ane, Rafalskyi Dmytro
Принадлежит:

A device for forming a quasi-neutral ion-electron beam, including: a chamber; a set of means for forming an ion-electron plasma in the chamber; and means for extracting and accelerating charged particles from the plasma out of the chamber. The particles are capable of forming the beam and the extraction and acceleration means that include a set of at least two grids located at one end of the chamber. 1. A device for forming a quasi-neutral beam of ions and electrons , comprising:a chamber,a set of means for forming an ion-electron plasma in the chamber;means for extracting and accelerating charged particles of the plasma out of the chamber to form said beam, said means for extracting and means for accelerating comprising a set of at least two grids located at one end of the chamber;a radiofrequency alternating voltage source adapted for generating a signal the radiofrequency of which is comprised between the plasma frequency of the ions and the plasma frequency of the electrons, said radiofrequency voltage source being positioned in series with a capacitor and connected, through one of its outlet and via this capacitor, to at least one of the grids of said set of at least two grids, at least one other grid of said set of at least two grids either being set to a reference potential, or connected to the other one of the outlets of the radiofrequency voltage source.2. The device of claim 1 , wherein the set of means for forming the ion-electron plasma comprises one or several coils powered by the radiofrequency alternating voltage source.3. The device of claim 2 , wherein the radiofrequency voltage source powering said or each coil is the same as the radiofrequency voltage source in series with the capacitor which are connected to at least one of the two grids claim 2 , the device further comprising a means for handling the signal provided by said source towards said or each coil on the one hand and towards said at least one grid on the other hand.4. The device of ...

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Номер записи: 87
30-01-2020 дата публикации

ION-ION PLASMA ATOMIC LAYER ETCH PROCESS

Номер: US20200035454A1
Автор: Carducci James D., Collins Kenneth S., Dorf Leonid, Ramaswamy Kartik, Rauf Shahid, Yang Yang
Принадлежит:

A method of etching uses an overhead electron beam source that generates an ion-ion plasma for performing an atomic layer etch process. 1. A method of processing a workpiece in an electron beam plasma reactor , said method comprising:dividing a chamber of said reactor into an upper chamber and a lower chamber by a grid filter, and supporting a workpiece in said lower chamber with a surface of said workpiece facing said grid filter along an axis;supplying a gas into said chamber;coupling RF source power into said upper chamber or to an electrode of said upper chamber or to an electrode support, to generate a plasma including beam electrons in said upper chamber to produce an electron beam having a beam propagation direction corresponding to said axis;allowing flow of at least a portion of said beam electrons from said upper chamber to said lower chamber while preventing flow of at least a portion of non-beam electrons and plasma ions from said upper chamber to said lower chamber; andallowing said electron beam to produce a plasma in said lower chamber.2. The method of claim 1 , wherein the beam electrons impinge the electronegative process gas in the lower plasma chamber to form a plasma in the lower plasma chamber that has a lower electron temperature than the plasma in the upper plasma chamber and provides an electronegative ion-ion plasma3. The method of claim 1 , wherein the beam electrons are emitted by the electrode of said upper chamber to form an electron beam having an electron beam direction substantially perpendicular to the interior surface of the electrode.4. The method of claim 1 , further comprising supplying a substantially inert gas into said upper chamber and supplying a molecular process gas into said lower chamber.5. The method of claim 1 , further comprising coupling a bias voltage to said workpiece.6. The method of claim 1 , wherein said top electrode comprises one of silicon claim 1 , carbon claim 1 , silicon carbide claim 1 , silicon oxide ...

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Номер записи: 88
12-02-2015 дата публикации

SELF-SUSTAINED NON-AMBIPOLAR DIRECT CURRENT (DC) PLASMA AT LOW POWER

Номер: US20150041432A1
Автор: CHEN Lee, CHEN Zhiying, FUNK Merritt
Принадлежит:

A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. The voltage potential gradient between the electron beam source chamber and the ion beam source chamber generates an energy field that is sufficient to maintain the electron beam and ion beam as a plasma treats the substrate so that radio frequency (RF) power initially applied to the processing system to generate the electron beam can be terminated thus improving the power efficiency of the processing system. 1. A processing system for self-sustained non-ambipolar plasma treatment of a substrate , comprising: 'excite an electron beam source plasma to generate an electron beam that excites an electron beam excited plasma;', 'an electron beam source chamber configured to 'house the electron beam excited plasma to generate an ion beam to maintain the electron beam, wherein one or both of the electron beam source chamber and the ion beam source chamber is configured to house the substrate to be treated by one or both of the electron beam source plasma and the electron beam excited plasma;', 'an ion beam source chamber configured to inject the electron beam from the electron beam source plasma and propel the electron beam into the ion beam source chamber, wherein the electron beam excited plasma includes an equal number of electrons and ions in the ion beam source chamber, and', 'inject the ion beam from the electron beam excited plasma and propel the ion beam into the electron beam source chamber, wherein the electron beam source plasma includes an equal number of electrons and ions in ...

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Номер записи: 89
12-02-2015 дата публикации

Gas Field Ionization Ion Source and Ion Beam Apparatus

Номер: US20150041650A1
Автор: Kawanami Yoshimi, MORITANI Hironori
Принадлежит: HITACHI HIGH-TECHNOLOGIES CORPORATION

In the case of a conventional gas field ionization ion source, it was not possible to carry out an analysis with a high S/N ratio and a high-speed machining process because the current amount of an ion beam is small. In view of these problems, the present invention has been devised, and its object is to obtain a large ion beam current, while suppressing a probability of damaging an emitter electrode. The present invention is characterized by a process in which an ion beam is emitted at least in two operation states including a first operation state in which, when a first extraction voltage is applied, with the gas pressure being set to a first gas pressure, ions are emitted from a first ion emission region at the apex of the emitter electrode, and a second operation state in which, when a second extraction voltage that is higher than the first extraction voltage is applied, with the gas pressure being set to a second gas pressure that is higher than the first gas pressure, ions are emitted from a second ion emission region that is larger than the first ion emission region. 115-. (canceled)16. An ion beam apparatus comprising:a gas field ionization ion source for generating an ion beam;a sample stage for holding a sample;a lens system that focuses the ion beam emitted from the gas field ionization ion source so as to be irradiated onto the sample;a deflection system that deflects the ions so as to change the irradiation position of the ion beam on the sample;a secondary particle detector for detecting secondary particles emitted from the sample;an image processing unit for forming an observation image of the sample by using the detection results of the secondary particle detector; anda control unit for controlling the lens system and the deflection system so as to adjust the irradiation position of the ion beam,wherein the gas field ionization ion source comprises:an emitter electrode having a needle-shaped apex provided with a micro-protrusion having a single atom ...

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Номер записи: 90
04-02-2021 дата публикации

APPARATUS AND SYSTEM HAVING EXTRACTION ASSEMBLY FOR WIDE ANGLE ION BEAM

Номер: US20210035779A1
Автор: Biloiu Costel, Campbell Christopher, Rockwell Tyler, SINCLAIR Frank, Thomas Appu Naveen
Принадлежит: Applied Materials, Inc.

An ion beam processing apparatus may include a plasma chamber, and a plasma plate, disposed alongside the plasma chamber, where the plasma plate defines a first extraction aperture. The apparatus may include a beam blocker, disposed within the plasma chamber and facing the extraction aperture. The apparatus may further include a non-planar electrode, disposed adjacent the beam blocker and outside of the plasma chamber; and an extraction plate, disposed outside the plasma plate, and defining a second extraction aperture, aligned with the first extraction aperture. 1. An ion beam processing apparatus comprising:a plasma chamber;a plasma plate, disposed alongside the plasma chamber, the plasma plate defining a first extraction aperture;a beam blocker, disposed within the plasma chamber and facing the extraction aperture;a non-planar electrode, disposed adjacent the beam blocker and outside of the plasma chamber; andan extraction plate, disposed outside the plasma plate, and defining a second extraction aperture, aligned with the first extraction aperture.2. The ion beam processing apparatus of claim 1 , wherein the plasma plate comprises an electrical insulator body claim 1 , and the beam blocker comprises an electrical insulator body.3. The ion beam processing apparatus of claim 1 , wherein the non-planar electrode comprises a first dielectric coating claim 1 , surrounding an electrically conductive inner electrode claim 1 , and wherein the extraction plate comprises a second dielectric coating claim 1 , disposed on an electrically conductive inner plate portion.4. The ion beam processing apparatus of claim 1 , wherein the non-planar electrode comprises a triangular shape in cross-section along a first direction claim 1 , the first direction being perpendicular to a plane of the plasma plate.5. The ion beam processing apparatus of claim 1 , wherein the extraction plate is movable with respect to the plasma plate claim 1 , along a first direction claim 1 , the first ...

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Номер записи: 91
11-02-2016 дата публикации

GCIB NOZZLE ASSEMBLY

Номер: US20160042909A1
Автор: Becker Robert K., FREYTSIS Avrum, GWINN Matthew C.
Принадлежит:

A nozzle assembly used for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the nozzle assembly includes two or more conical nozzles that are aligned such that they are both used to generate the same GCIB. The first conical nozzle may include the throat that initially forms the GCIB and the second nozzle may form a larger conical cavity that may be appended to the first conical nozzle. A transition region may be disposed between the two conical nozzles that may substantially cylindrical and slightly larger than the largest diameter of the first conical nozzle. 1. A nozzle assembly for use in a gas cluster beam (GCB) processing system , comprising:a gas supply manifold having at least one gas supply conduit;a first nozzle component through which a first portion of at least one conical nozzle is formed that extends from a nozzle throat at a first entry surface to an intermediate exit at a first exit surface;a second nozzle component through which a second portion of said at least one conical nozzle extends from an intermediate inlet at a second entry surface to a nozzle exit at a second exit surface, said second nozzle component further including a re-entrant cavity into which said first nozzle component inserts such that said first exit surface mates with said second entry surface, and said first nozzle portion aligns with said second nozzle portion to form said conical nozzle; anda sealing member disposed between said first nozzle component and said gas supply manifold such that when said second nozzle component is attached to said gas supply manifold, said first entry surface of said first nozzle component presses against said sealing member and creates a seal with said gas supply manifold surrounding an outlet of said at least one gas supply conduit.2. The assembly of claim 1 , wherein said first nozzle component is a monolithic piece composed of ceramic.3. The assembly of claim 1 , wherein said second nozzle ...

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Номер записи: 92
08-02-2018 дата публикации

METHOD AND DEVICE FOR THE PRODUCTION OF HIGHLY CHARGED IONS

Номер: US20180040450A1
Автор: Kultashev Oleg Kostantinovich, Nefiodov Andrei Vladimirovich, Ovsyannikov Vladimir Petrovich
Принадлежит:

The invention relates to a novel ion source, which uses method for the production of highly charged ions in the local ion traps created by an axially symmetric electron beam in the thick magnetic lens. The highly charged ions are produced in the separate local ion traps, which are created as a sequence of the focuses (F, F, and F) of the electron beam (EB) rippled in the magnetic field (B(z)). Since the most acute focus is called the main one, the ion source is classified as main magnetic focus ion source (MaMFIS/T), which can also operate in the trapping regime. The electron current density in the local ion traps can be much greater than that in the case of Brillouin flow. For the ion trap with length of about 1 mm, the average electron current density of up to the order of 100 kA/cmcan be achieved. Thus it allows one to produce ions in any charge state for all elements of the Periodic Table. In order to extract the ions, geometry of the electron beam is changed to a relatively smooth electron beam by setting the potential of the focusing electrode (W) of the electron gun negative with respect to the potential of the cathode (C). 1. Method for the production of highly charged ions by generating an electron beam propagating along a drift tube and traversing a magnetic field; forming the electron beam with variable radius varying along the drift tube in a trapping mode and', 'changing the geometry of the electron beam so that the electron beam with variable radius is changed into an electron beam with constant radius along the drift tube in an extraction mode., 'comprising'}2. Method according to claim 1 , wherein the trapping mode is executed by creating a sequence of acute optical focuses forming local ion traps along the electron beam focused by the magnetic field.3. Method according to any of the or claim 1 , wherein the electron beam is led to propagate in an axial direction within a drift tube of either cylindrical or conical form.4. Method according to any of ...

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Номер записи: 93
06-02-2020 дата публикации

Orthogonal double dipole cancer therapy treatment beam scanning apparatus and method of use thereof

Номер: US20200038681A1
Автор: Faye Hendley Elgart, Mark R. Amato, Nandish Desai, Nick Ruebel, W. Davis Lee
Принадлежит: Individual

The invention comprises a method and apparatus for scanning charged particles in a cancer therapy system, comprising the steps of: (1) providing a first and second dipole magnet system and a gap, the gap comprising a common gap length, along a path of the charged particles, within both the first and second dipole magnet systems, the gap comprising a progressively increasing x/y-plane cross-section area from an entrance area of the charged particles into the double dipole magnet system to an exit area of the double dipole magnet system, the x/y-plane perpendicular to a z-axis from a center of the entrance area to a center of the exit area; (2) scanning the positively charged particles along a first axis of the x/y-plane using the first dipole magnet system; and (3) scanning the positively charged particles along a second axis of the x/y-plane using the second dipole magnet system.

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Номер записи: 94
18-02-2016 дата публикации

Enriched silicon precursor compositions and apparatus and processes for utilizing same

Номер: US20160046849A1
Автор: James J. Mayer, Joseph D. Sweeney, Richard S. Ray, Robert Kaim
Принадлежит: Entegris Inc

Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above natural abundance in at least one of 28 Si, 29 Si, and 30 Si, and may include a supplemental gas including at least one of a co-species gas and a diluent gas. Dopant gas supply apparatus for providing such silicon dopant compositions to an ion implanter are described, as well as ion implantation systems including such dopant gas supply apparatus.

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Номер записи: 95
06-02-2020 дата публикации

ION BEAM TREATMENT PROCESS FOR PRODUCING A SCRATCH-RESISTANT HIGH- TRANSMITTANCE ANTIREFLECTIVE SAPPHIRE

Номер: US20200043694A1
Автор: Busardo Denis, Guernalec Frédéric
Принадлежит:

Process for treatment of a sapphire part with a beam of a mixture of mono- and multicharged ions of a gas which are produced by an electron cyclotron resonance (ECR) source, where: 1. A process for antireflective treatment in the visible region of a material made of sapphire , comprising:bombarding the material with a beam of a mixture of mono- and multicharged ions of a gas which are produced by an electron cyclotron resonance (ECR) source, where:an acceleration voltage is within a range of between 10 and 100 kV;{'sup': 2', '16', '17', '2, 'an implanted dose of ions, expressed in ions/cm, is within a range of between 10and 3×10ions/cm;'}{'sub': 'D', 'a rate of displacement V, expressed in cm/s, is within a range of between 0.1 cm/s and 5 cm/s.'}2. The process according to claim 1 , characterized in that the mixture of mono- and multicharged ions are ions of the elements selected from the group consisting of helium (He) claim 1 , neon (Ne) claim 1 , argon (Ar) claim 1 , krypton (Kr) claim 1 , and xenon (Xe).3. The process according to claim 1 , characterized in that the mixture mono- and multicharged ions are ions of gases selected from the group consisting of nitrogen (N) and oxygen (O).4. The process according to claim 1 , characterized in that the implanted dose claim 1 , expressed in ions/cm claim 1 , is between (5×10)×(M/14)and 10×(M/14) claim 1 , where M is the atomic mass of the ion.5. The process according to claim 1 , characterized in that the rate of displacement V claim 1 , expressed in cm/s claim 1 , is between 0.025×(P/D) and 0.1×(P/D) claim 1 , where P is the power of the beam claim 1 , expressed in W (watts) claim 1 , and D is the diameter of the beam claim 1 , expressed in cm (centimeters).6. The process according to claim 1 , characterized in that a displacement amplitude A of the beam claim 1 , expressed in cm claim 1 , is chosen so that (P/A)>0.04 W/cm claim 1 , where P is the power of the beam claim 1 , expressed in W (watts).7. The process ...

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Номер записи: 96
06-02-2020 дата публикации

Systems And Methods For Workpiece Processing Using Neutral Atom Beams

Номер: US20200043775A1
Автор: Stephen E. Savas
Принадлежит: Beijing E Town Semiconductor Technology Co Ltd, Mattson Technology Inc

Plasma processing systems and methods are provided. In one example, a system includes a processing chamber having a workpiece support. The workpiece is configured to support a workpiece. The system includes a plasma source configured to induce a plasma from a process gas in a plasma chamber to generate one or more species of negative ions. The system includes a grid structure configured to accelerate the one or more negative ions towards the workpiece. The grid structure can include a first grid plate, a second grid plate, and one or more magnetic elements positioned between the first grid plate and second grid plate to reduce electrons accelerated through the first grid plate. The system can include a neutralizer cell disposed downstream of the grid structure configured to detach extra electrons from ions of the one or more species of negative ions to generate energetic neutral species for processing the workpiece.

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Номер записи: 97
03-03-2022 дата публикации

ION IMPLANTER AND ION SELECTION METHOD

Номер: US20220068588A1
Автор: ANSAI HISAHIRO
Принадлежит:

An ion implanter according to an embodiment of the present disclosure includes: an ion source that includes a plurality of kinds of ions; an extraction electrode that extracts the plurality of kinds of ions from the ion source and generates an ion beam; an ion beam transport tube that transports the ion beam to an object to be irradiated with the ion beam; and an interaction section that is disposed inside the ion beam transport tube, extends substantially parallel to an extending direction of the ion beam transport tube, and is fixed at a predetermined electric potential. 1. An ion implanter comprising:an ion source that includes a plurality of kinds of ions;an extraction electrode that extracts the plurality of kinds of ions from the ion source and generates an ion beam;an ion beam transport tube that transports the ion beam to an object to be irradiated with the ion beam; andan interaction section that is disposed inside the ion beam transport tube, extends substantially parallel to an extending direction of the ion beam transport tube, and is fixed at a predetermined electric potential.2. The ion implanter according to claim 1 , wherein the interaction section changes a trajectory of the ion beam by an interaction between: image charges in the interaction section with respect to the plurality of kinds of ions; and the plurality of kinds of ions.3. The ion implanter according to claim 1 , whereinthe ion beam includes a first ion having a first mass m1 and a first charge number q1, and a second ion having a second mass m2 and a second charge number q2, and{'sup': 2', '2, 'the interaction section causes a first trajectory of the first ion and a second trajectory of the second ion to differ from each other in accordance with a difference between m1/(q1)and m2/(q2).'}4. The ion implanter according to claim 3 , further comprisinga slit that causes the first ion to pass through and shields the second ion.5. The ion implanter according to claim 1 , wherein the ...

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Номер записи: 98
14-02-2019 дата публикации

POSITIVE AND NEGATIVE ION SOURCE BASED ON RADIO-FREQUENCY INDUCTIVELY COUPLED DISCHARGE

Номер: US20190051486A1
Автор: Gao Fei, WANG Younian
Принадлежит: Dalian University of Technology

The present invention discloses a positive and negative ion source based on radio-frequency inductively coupled discharge, comprising a tube, a middle portion of which is communicated with an intake pipe; discharge coils electrically connected to a matched network and a radio-frequency power supply successively are wound on the tube; one end of the tube is connected to a first cover plate in a sealed manner, and the first cover plate is connected with a positive ion extraction gate via an insulating medium; the positive ion extraction gate is electrically connected to a negative pole of a DC power supply; the other end of the tube is connected to a second cover plate in a sealed manner, the second cover plate is connected to a third cover plate in a sealed manner via a sidewall, and the third cover plate is connected with a negative ion extraction gate via an insulating medium; and the negative ion extraction gate is electrically connected to a positive pole of the DC power supply. In the present invention, the positive ions and the electrons and negative ions can be extracted simultaneously, and the problems of contamination of the ion source by particles sputtered from the backplane and overheating of the backplane are thus solved. 1. A positive and negative ion source based on radio-frequency inductively coupled discharge , comprising a tube , a middle portion of which is communicated with an intake pipe; and discharge coils electrically connected to a matched network and a radio-frequency power supply successively are wound on the tube;one end of the tube is connected to a first cover plate in a sealed manner, and the first cover plate is connected with a positive ion extraction gate via an insulating medium; and the positive ion extraction gate is electrically connected to a negative pole of a DC power supply; andthe other end of the tube is connected to a second cover plate in a sealed manner, the second cover plate is connected to a third cover plate in a ...

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Номер записи: 99
14-02-2019 дата публикации

FIELD IONIZATION SOURCE, ION BEAM APPARATUS, AND BEAM IRRADIATION METHOD

Номер: US20190051491A1
Автор: HASHIZUME Tomihiro, Kawanami Yoshimi, Matsubara Shinichi, Shichi Hiroyasu
Принадлежит:

An H ion is used as an ion beam to achieve improvement in focusing capability influencing observed resolution and machining width, improvement in the beam stability, and a reduction in damage to the sample surface during the beam irradiation, in the process of observation and machining of the sample surface by the ion beam. The H ion can be obtained by use of a probe current within a voltage range around a second peak occurring when an extracted voltage is applied to a needle-shaped emitter tip with an apex terminated by three atoms or less, in an atmosphere of hydrogen gas. 1. An ion beam apparatus , comprising:{'sub': '3', 'sup': '+', 'a gas field ionization source that emits an ion beam containing a H ion;'}a beam irradiation column that includes a lens capable of focusing an ion emitted from the gas field ionization source, and a deflector capable of deflecting an ion beam;a sample stage on which a sample to be irradiated with an ion beam passing through the beam irradiation column is loaded; anda sample chamber that houses at least the sample stage,{'sub': '3', 'sup': '+', 'wherein an abundance ratio of the H ion is the highest in ion species emitted from an emitter tip of the gas field ionization source.'}2. The ion beam apparatus according to claim 1 ,{'sub': '3', 'sup': '+', 'further comprising a filter that allows an emitted H ion to penetrate based on ion mass in a selective manner.'}3. The ion beam apparatus according to claim 2 ,{'sub': '3', 'sup': '+', 'wherein the filter has a function of allowing only a H ion to penetrate in a selective manner.'}4. The ion beam apparatus according to claim 2 ,wherein the filter has a function of producing a magnetic field.5. The ion beam apparatus according to claim 1 ,further comprising a function of correcting a mask or mold for nanoimprint lithography by the ion beam.6. An ion beam apparatus claim 1 , comprising:a gas field ionization source;a beam irradiation column that is equipped with a lens capable of focusing ...

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Номер записи: 100