Многоканальный источник ионов

... 1. МНОГОКАНАЛЬНЫЙ ИСТОЧНИК ИОНОВ, содержащий являющиеся полюсами магнита катодные пластины с отверстиями в одной из них и расположенную между Изобретение относится к ионно-плазменной технике и может быть использовано для получения ионных пучков. Известны многоканальные источники ионов, применяемые для равномерного облучен ия больших поверхностей без сканирования пучка. Эти источники имеют разрядную камеру для образования плазмы с необходимой концентрацией ионов и систему извлечения и первичного формирования ионного пучка. Разрядная камера содержит накаливаемый катод и систему последовательно расположенных анодов из электропроводящего магнитного материала . Разрядную камеру от области, где проходит отбор ионов , отделяет ; экранирующая сетка, за которой расположена сетка-экстрактор. Эти две сетки образуют систему извлечения и.первичного формирования ионного пучка. Однако, эти источники ионов не позволяют увеличить плртность тока пучка, поними анодную пластину с отверстиями, соосными с отверстиями ...

UNIVERSAL COLD CATHODE ION PRODUCTION AND - ACCELERATOR.

SOURCE OF CATHODE SHEET

NEGATIVE ION EXTRACTOR

NEGATIVE ION EXTRACTOR Process and apparatus for use in extracting negative ions from a plasma which is particularly useful in reactive ion etching of metals, silicon and oxides and nitrides of silicon in the manufacture of semiconductor devices. A magnetic field is employed in the apparatus and, herein, is created by a novel grid, through which negative ions pass to a surface, such as one to be etched, while free electrons are prevented from passing through the grid and out of the plasma. The novel process utilizes negative ions which have a large fraction in the atomic state.

Einrichtung zur Erzeugung von beschleunigten elektrisch geladenen Korpuskeln.

Einrichtung zur Erzeugung von beschleunigten elektrisch geladenen Korpuskeln.

Zerstäubungs-Ionenquelle

Cold cathode low generating and accelerating device

The cold cathode, ion generating and ion accelerating universal device is used to generate an ion beam of any material to be ionized. The material may be electrically conductive, semiconductive or insulating and solid, liquid or gas. The appts. includes a gasifying unit (1,2) which is able to transform the material to be ionized into gaseous form. An ionizing unit (6, 7, 13) which transforms the atoms or molecules of the material, which is now in gaseous form, into ions. The ionizing unit provides ionization energy and so produces plasma. The appts. includes an accelerating unit (13-13", 12-12') which accelerates ions present in the plama produced by the ionization unit and produces an ion beam.

Cold cathode low generating and accelerating device

The cold cathode, ion generating and ion accelerating universal device is used to generate an ion beam of any material to be ionized. The material may be electrically conductive, semiconductive or insulating and solid, liquid or gas. The appts. includes a gasifying unit (1,2) which is able to transform the material to be ionized into gaseous form. An ionizing unit (6, 7, 13) which transforms the atoms or molecules of the material, which is now in gaseous form, into ions. The ionizing unit provides ionization energy and so produces plasma. The appts. includes an accelerating unit (13-13", 12-12') which accelerates ions present in the plama produced by the ionization unit and produces an ion beam.

Ion source

Ion source

Hall ion source device

HOLLOW CATHODE FOR SOURCE ELECTRONIC AND IONIC PLASMA

MAP ION DIODE PUFF VALVE AND GAS DAM AND METHOD OF USING THE SAME

L'invention concerne une diode ionique, à plasma anodique à confinement magnétique (MAP), comprenant une alimentation en gaz, une soupape de pulvérisation destinée à libérer un nuage de gaz de travail se dilatant radialement, une buse destinée à diriger ledit nuage de gaz de travail se dilatant radialement, d'une ouverture d'entrée adjacente à la soupape de pulvérisation vers une ouverture de sortie, et une barrière gazeuse placée adjacente à l'extrémité de sortie de la buse et dans la buse. Afin de produire un plasma azimutal uniforme dans la source ionique de la diode MAP, on utilise une bobine magnétique à soupape de pulvérisation possédant plus de trois spires. Cette augmentation du nombre de spires permet que la durée de la montée d'intensité dans la bobine reste inférieure à la durée de la chute d'intensité dans le plasma. On utilise, en outre, un anneau dur en O dans la soupape de pulvérisation afin de réduire les variations dans l'écoulement gazeux. La diode ionique MAP produit ...

End-Hall ion source

A gas, ionizable to produce a plasma, is introduced into a region defined within an ion source. An anode is disposed near one end of that region, and a cathode is located near the other. A potential is impressed between the anode and the cathode to produce electrons which flow generally in a direction from the cathode toward the anode and bombard the gas to create a plasma. A magnetic field is established within the region in a manner such that the field strength decreases in the direction from the anode to the cathode. The direction of the field is generally between the anode and the cathode. The electrons are produced independently of any ion bombardment of the cathode, the magnet is located outside the region on the other side of the anode and the gas is introduced uniformly across the region.

Method of cleaning ion source, and corresponding apparatus/system

A method and/or system for cleaning an ion source is/are provided. In certain embodiments of this invention, both the anode and cathode of the ion source are negatively biased during at least part of a cleaning mode. Ions generated are directed toward the anode and/or cathode in order to remove undesirable build-ups from the same during cleaning.

ION IMPLANTATION SYSTEM FOR IMPLANTING WORKPIECES

An ion implantation system that rapidly and efficiently processes large quantities of workpieces, such as flat panel displays. The ion implantation system includes a high vacuum process chamber (318) that mounts an ion source (330), a single workpiece translating stage (320) and a loadlock (310). The single workpiece handling assembly mounted within the process chamber both removes the workpiece from the loadlock and supports the workpiece during implantation by the ion beam generated by the ion source. The process chamber is in selective fluid communication with a loadlock assembly, which in turn is mechanically integrated with a workpiece loading or end station. Additionally, the workpiece handling assembly includes a translation stage or element for translating the workpiece in a linear scanning direction during implantation. This linear scanning direction extends along a path transverse or orthogonal to the horizontal longitudinal axis of the implantation system. According to one practice ...

ION SOURCE OF ION IMPLANTATION DEVICE

PROBLEM TO BE SOLVED: To provide an ion source of an ion implantation device capable of thinning the diameter of ion beam cross section in a simple method, reducing beam loss, reducing contamination on the inside of an implantation unit and insulation deterioration, and increasing effective beam density. SOLUTION: An ion source of an ion implantation device has a reflector electrode 4 for reflecting thermoelectrons generated in a filament 1 and a DC magnetic field apply means for applying a DC magnetic field advancing the thermoelectrons from the filament 1 to the reflector electrode 4. A DC voltage variable means 7 for varying DC voltage applying to the reflector electrode 4, and an RF power source 8 for applying high frequency AC voltage superimposing on the DC voltage are arranged, and an electric field between the filament 1 and the reflector electrode 4 is varied by applying these voltages. COPYRIGHT: (C)1998,JPO ...

ION SOURCE

PURPOSE: To obtain an ion source whose operation is stabilized and which is minimally contaminated by applying voltage across a plate-like first electrode and a second electrode placed facing each other and installing a plural number of permanent magnets on the first electrode. CONSTITUTION: A magnetic field 18 parallel to a first electrode 13 is produced over the first electrode 13 by means of two facing permanent magnets 14 having different polarities. An electric field 19 perpendicular to the magnetic field 18 is produced by applying voltage across the first and the second electrodes 13 and 16. When ionized gas is introduced through a gas introduction inlet 20, molecules of the gas are ionized by bumping against rotating electrodes thereby producing plasma through electric discharge. Positive ions in the plasma are discharged through a beam hole 21 as ion beams 22. The first and the second electrodes 13 and 16 are prepared from carbon graphite, so that a polymer film hardly adheres to ...

УСТРОЙСТВО ДЛЯ ФОРМИРОВАНИЯ ПУЧКА КЛАСТЕРНЫХ ИЛИ АТОМАРНЫХ ИОНОВ ГАЗА

Изобретение относится к ускорительной технике, в частности к источникам ионов, и может быть использовано для получения ускоренных кластерных или атомарных ионов. Данное изобретение позволяет получить стабильный направленный поток ионов на выходе ионизатора и может найти применение как для решения практических задач оптики, микро- и наноэлектроники, так и в методиках исследования поверхности, таких как вторичная ионная масс-спектрометрия (ВИМС) и рентгеновская фотоэлектронная спектроскопия (РФЭС). Технический результат - улучшение эксплуатационных характеристик устройства и повышение эффективности ионизации атомарных и кластерных ионов. Устройство для получения кластерных и атомарных ионов содержит электромагнит, установленный между корпусом и анодом, выполненный с возможностью формирования магнитного поля с индукцией не менее 5 мТл, катод выполнен из металлосплавного материала с температурой эмиссии не более 900°С. Корпус выполнен с отверстиями для вакуумной откачки и снабжен колпаком, ...

МНОГОКАНАЛЬНЫЙ ИОННЫЙ ИСТОЧНИК

... 1. Многоканальный ионный источник, включающий электродную систему, содержащую катодную корпусную и анодную части, источники магнитодвижущей силы, рабочих газов и высоковольтного электропитания, обеспечивающие разряд между катодом и анодом в скрещенных продольном магнитном и поперечном электрическом полях, в котором катодная корпусная магнитопроводящая часть источника снабжена отверстиями для выхода ионов, образующихся в разряде между катодом и анодом, отличающийся тем, что катодная корпусная часть имеет концентрические вакуумные каналы с кольцевыми отверстиями для выхода ионов, анодная часть состоит из находящихся в вакуумных каналах изолированных друг от друга и от катода концентрических колец под кольцевыми отверстиями в катоде, поверхность каждого из анодных колец, обращенная к катоду, параллельна внутренней поверхности катода, перекрывает отверстие в катоде по ширине, каждое анодное кольцо подсоединено к собственному высоковольтному источнику электропитания, а каждый вакуумный канал ...

ИСТОЧНИК ИОНОВ

Источник ионов, содержащий разрядную камеру, которая является анодом и имеет отверстие для входа разрядного газа и отверстие для выхода получаемых ионов, катод, магнит и ионизируемое рабочее вещество, отличающийся тем, что ионизируемое рабочее вещество выполнено в виде пластины и размещено в зоне разряда разрядной камеры источника ионов на электрически соединенной с катодом подложке из тугоплавкого материала, на стороне, которая обращена к катоду.

УСКОРИТЕЛЬ ПЛАЗМЫ

A METHOD AND APPARATUS FOR ION BEAM GENERATION

Ion Source

Ion sources

Ion souce Ion implanting device and manufacturing method of semiconductor devices

Ion generation device for ion implantation

In an ion generation device which includes a chamber (51) in which plasma is generated, a first opening (52) for introducing gas to be ionized by the plasma, and a second opening (53) for irradiating ions generated from the gas, the inner wall of the chamber (51) is, or is coated with, metal or metal compound (60) which is resistant to chemical etching by the ions and radicals. Suitable resistant materials are V, Nb, Ta, Cr, Ti, Zr, Hf, Ni, Pb and Pt. A barrier layer may be provided between the chamber wall and its coating. The surface of the coating may be nitrided. ...

ION GUN WITH ESSENTIALLY PLANAR ARRANGEMENT

STEAM AND ION GUN.

Ion source

Ionic source.

Ionic source.

Looped ionization source

Looped ionization sources for ion mobility spectrometers are described. The ionization sources can be used to ionize molecules from a sample of interest in order to identify the molecules based on the ions. In an implementation, an electrical ionization source includes a wire that is looped between electrical contacts. The wire is used to form a corona responsive to application of voltage between the wire and the walls of an ionization chamber. The corona can form when a sufficient voltage is applied between the wire and the walls. A difference in electrical potential between the wire and a wall forming an ionization chamber, in which wire is contained, can be used to draw the ions away from the wire. In embodiments, the wire can be heated to reduce the voltage used to strike the corona. The ions, subsequently, may ionize the molecules from the sample of interest. The looped corona source can also be used in mass spectrometers (MS).

Non-grid ion plating aide

The invention relates to a non-grid ion coating aided machine for vacuum filming device. It includes an ion source which includes a discharge zone and magnetic circuit located in the zone; a gas supplying system; an anode located under the discharge zone; a cathode located on the discharge zone that corresponding to the anode; and an anode launch angle workpiece located on the anode and is used to control the ion launch angle. The invention would improve the filming quantity of the basis material.

Source de vapeurs et d'ions

La présente invention concerne une source de vapeurs et d'ions comprenant dans une enceinte à basse pression une anode M, une cathode K et des moyens d'application d'un champ magnétique A. La cathode K est constituée d'une cavité équipotentielle 10 munie d'une ouverture 11. Un champ magnétique B orthogonal au plan de l'ouverture est appliqué au niveau de celle-ci. Le matériau à ioniser 15 est disposé dans la cavité de cathode ...

Hall effect ion ejection device

LARGE AREA UNIFORM ION BEAM FORMATION

A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion chamber generating a stream of ions, a plasma electrode having an elongated slot with a high aspect ratio for shaping the stream of ions into a ribbon beam, and an electrode assembly for directing the stream of ions towards a workpiece. The plasma electrode can include a split extraction system having a plurality of elongated slots oriented substantially parallel to each other. The ion implantation system can also have a diffusing system for homogenizing the ion stream. Various exemplary diffusing systems include an apertured plate having an array of openings, diffusing magnets, diffusing electrodes, and dithering magnets.

Ion source and method of drawing out ion beam

An ion source including a plasma chamber for generating a plasma therein, at least three parallel electrodes for drawing out an ion beam from the plasma chamber, the first and second power sources for generating high and low drawing voltages, respectively, is disclosed in which the first power source is connected between the first pair of adjacent electrodes spaced apart from each other a relatively long distance to perform a high voltage operation, the second power source is connected between a second pair of adjacent electrodes spaced apart from each other a relatively short distance to perform a low voltage operation, and one of the high voltage operation and low voltage operation is changed over to the other with the aid of switching elements.

Ion generation device, ion irradiation device, and method of manufacturing a semiconductor device

An ion generation device includes a chamber in which plasma is generated, a first opening for introducing gas to be ionized by the plasma, and a second opening for irradiating ions generated from the gas. The inner wall of the chamber is coated with metal which is resistant to chemical etching by the ions and radicals.

Polymer surface treatment with particle beams

A polymer surface and near surface treatment process produced by irradiation with high energy particle beams. The process is preferably implemented with pulsed ion beams. The process alters the chemical and mechanical properties of the polymer surface in a manner useful for a wide range of commercial applications.

Ion sources for ion implantation apparatus

The invention relates to improving the efficiency of ion flow from an ion source, by reducing heat loss from the source both in the ion chamber of the ion source and its constituent parts (e.g. the electron source). This is achieved by lining the interior of the ion chamber and/or the exterior with heat reflective and/or heat insulating material and by formation of an indirectly heated cathode tube such that heat transfer along the tube and away from the ion chamber is restricted by the formation of slits in the tube. Efficiency of the ion source is further enhanced by impregnating and/or coating the front plate of the ion chamber with a material which comprises an element or compound thereof, the ions of which element are the same specie as those to be implanted into the substrate from the source thereof.

LARGE AREA UNIFORM ION BEAM FORMATION

A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion chamber generating a stream of ions, a plasma electrode having an elongated slot with a high aspect ratio for shaping the stream of ions into a ribbon beam, and an electrode assembly for directing the stream of ions towards a workpiece. The plasma electrode can include a split extraction system having a plurality of elongated slots oriented substantially parallel to each other. The ion implantation system can also have a diffusing system for homogenizing the ion stream. Various exemplary diffusing systems include an apertured plate having an array of openings, diffusing magnets, diffusing electrodes, and dithering magnets.

APPARATUS FOR GENERATING ION

PURPOSE: To reduce quantity of an impurity ion to be generated by using at least a kind of metal belonging in a group of small sputtering ratio for a three- pole discharging control electrode and a cylindrical part of a second negative electrode, and letting at least one among the control electrode, a first negative electrode and the second negative electrode have a part including titanium. CONSTITUTION: In a control electrode 5 and a second negative electrode 7, parts to receive strongest ion impact are those facing a through hole of a cylindrical part i.e., annular parts 5b, 7b of the positive electrode 3 side of the cylindrical part inner wall. At least a kind of metal belonging in a group R of small sputtering ratio is used for the annular parts 5b, 7b. Parts other than the cylindrical part i.e., tubular parts 5a and 7a are made of a material principally consisting of titanium. The group R consists of vanadium, chromium, niobium, molybdenum, tantalum and tungsten. COPYRIGHT: (C)1991 ...

RF TYPE ION ENGINE

PURPOSE: To better the uniformity of plasma on an electrode surface as well as to improve propulsion efficiency ever so better, by covering a part or the whole part of a discharge vessel with plural magnetic cusp annular lines. CONSTITUTION: In this engine bearing the above caption, the electron accelerated by an induction coil 6 collides with the Hg gas led into a discharge vessel 1 from a gas intake system whereby ionizing plasma is formed inside a dis charge chamber 8. And, Hg+ ion is given kinetic energy by an accelerating electrode constituted of electrodes 2W4 and, after being electrically neutralized by an electron emitted out of a neutralizer 7, becoming impellent force for this engine. At the abovementioned, a lot of magnets 9 are secured to a wall of the discharge vessel 1 so as to make an N pole and an S pole alternate. And, a part or the whole part of the discharge vessel 1 is covered with plural magnetic cusp annular lines so as not to make a magnetic field exist other than ...

LARGE DIAMETER ION SOURCE

PROBLEM TO BE SOLVED: To provide an ion source that generates an ion beam having a large effective diameter with an ion beam current density of 10 mA/cm2 or more, an ion beam uniformity of ±3% or less and a reproducibility (change with the passage of time) of ion beam current density of ±1% or less. SOLUTION: This ion source comprises plural hot cathodes, a positive electrode, a magnet arranged so as to surround the outside of the positive electrode, an inert gas inlet pipe, a shielding electrode that is arranged at the ion taking out portion and has plural thin holes, and an accelerating electrode having plural thin holes of the same shape, and further comprises a shield plate that suppresses the temperature rise and heat distortion of the shielding electrode and a cooling jacket that is directly mounted on the accelerating electrode, shielding electrode and ion source body for cooling each of them respectively. COPYRIGHT: (C)2002,JPO ...

IONENQUELLE, INSBESONDERE FUER IONENIMPLANTATIONSANLAGEN

Ionenquelle.

VORRICHTUNG UND VERFAHREN ZUR KÜHLUNG VON IN EINER IONENIMPLANTATIONSANLAGE BEHANDELTEN WERKSTÜCKEN

ERZEUGUNG EINES GLEICHMÄSSIGEN IONENSTRAHLS GROSSER OBERFLÄCHE

Thin film deposition apparatus

Improved double chamber ion implantation system

An improved double chamber ion source (48) comprising a plasma generating chamber (50), a charge exchange chamber (52) and a divider structure (56) therebetween. The charge exchange chamber (52) includes magnetic shielding material (66) to reduce exposure of interior components to magnetic field lines externally generated. The double compartment ion source (48) further comprises inclusion of a heat shield (72) and/or a cooling system (76) to overcome deleterious effects caused by increased temperature in the plasma generating chamber (50). The divider structure (56) has a plurality of apertures (58) having a configuration (82, 84) to reduce surface area on the divider structure (56) in the charge exchange chamber (52).

Ion source and operation method thereof

DEVICES AND PROCEDURES FOR THE CONTROLLING OF THE ION GUN IN ION IMPLANTIERUNGSGERAETEN.

Ion source

MULTI-CATHODE METAL VAPOR ARC ION SOURCE

PLASMA DISCHARGE ION SOURCE

PLASMA DISCHARGE ION SOURCE The specification discloses an ion source in which a compound of the material of a desired ion is dissociated in a plasma discharge process between an anode and a cathode to provide a beam of charged particles including the desired ions. The proportion of the desired ion in the particle beam is selected by adjustment of the temperature of the plasma beyond that which was previously attainable in ion sources of this type. This is achieved by disposing a pair of magnetic members adjacent the ends of the anode so as to constrict the magnetic fields at the ends of the anode.

LOOPED IONIZATION SOURCE

Looped ionization sources for ion mobility spectrometers are described. The ionization sources can be used to ionize molecules from a sample of interest in order to identify the molecules based on the ions. In an implementation, an electrical ionization source includes a wire that is looped between electrical contacts. The wire is used to form a corona responsive to application of voltage between the wire and the walls of an ionization chamber. The corona can form when a sufficient voltage is applied between the wire and the walls. A difference in electrical potential between the wire and a wall forming an ionization chamber, in which wire is contained, can be used to draw the ions away from the wire. In embodiments, the wire can be heated to reduce the voltage used to strike the corona. The ions, subsequently, may ionize the molecules from the sample of interest. The looped corona source can also be used in mass spectrometers (MS).

SOURCE Of IONS HAS DRIFT FERMEE Of ELECTRONS

Device for the electric production of high voltage

CLOSED ELECTRON DRIFT ION SOURCE AND METHODS OF USING THE SAME

An ion beam source (500) that emits an ion beam in a direction of a substrate is provided. A cathode (509) with a discharge opening defined therein is included. An anode (508) is also included and spaced apart from the cathode. Ions are set to be emitted in an area proximate to the discharge opening in a direction similar to the direction from the anode to the discharge opening. First and second ceramic walls (506A, B) at least partially define a discharge channel (504) between the anode and the cathode. At least one magnet (502) generates a magnetic field in an area proximate to the discharge opening.

LOADLOCK ASSEMBLY FOR AN ION IMPLANTATION SYSTEM

The present invention provides a loadlock assembly for a high throughput ion implantation system that rapidly and efficiently processes large quantities of workpieces, such as flat panel displays. The loadlock assembly (310) increases the throughput of the implantation system by continuously cycling workpieces through the process chamber (318), thus increasing the system's throughput. The loadlock assembly includes a plurality of loadlock stacking elements (354) that are axially positioned relative to each other to form a stacked array of loadlocks. Additionally, the loadlocks of the array are configured to nest with an adjacent loadlock to form a stackable and nestable loadlock assembly.

Method and apparatus for altering material

Methods and apparatus for thermally altering the near surface characteristics of a material are described. In particular, a repetitively pulsed ion beam system comprising a high energy pulsed power source and an ion beam generator are described which are capable of producing single species high voltage ion beams (0.25-2.5 MeV) at 1-1000 kW average power and over extended operating cycles (108). Irradiating materials with such high energy, repetitively pulsed ion beams can yield surface treatments including localized high temperature anneals to melting, both followed by rapid thermal quenching to ambient temperatures to achieve both novel and heretofore commercially unachievable physical characteristics in a near surface layer of material.

Control mechanisms for dosimetry control in ion implantation systems

A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion source, an electrode assembly, a platform mounting a workpiece, and a ion beam measuring structure. The ion source in conjunction with the electrode assembly forms an ion beam in the shape of a ribbon beam. The ion beam is formed and directed such that a first portion of the ion beam treats the workpiece while a second portion of the ion beam is contemporaneously measured by the beam measuring structure. A controller obtains data from the beam measuring structure on the ion beam's parameters, and then generates control signals to the ion implantation system in response to the data.

Method of producing and guiding intensive, large-area ion, electron and x-ray beams

A method for the repeatable generation and guidance of intensive, large-area ion, electron and x-ray beams, with the beam guidance being effected already in the beam generator by means of operationally variable, magnetic and electric fields and variable magnetic correction fields, wherein the beam guidance fields are generated by the beam current itself and the magnetic correction fields by the current source associated with the beam generator.

Ion generation device, ion irradiation device, and method of manufacturing a semiconductor device

An ion generation device includes a chamber in which plasma is generated, a first opening for introducing gas to be ionized by the plasma, and a second opening for irradiating ions generated from the gas. The inner wall of the chamber is coated with metal which is resistant to chemical etching by the ions and radicals.

Apparatus for ion implantation

The disclosure relates to a system for implanting ions into a target element including a source arrangement (410) for producing an ion beam; a flight tube (421); a beam analyzing arrangement for receiving the ion beam and selectively separating various ion species in the beam on the basis of mass to produce an analyzed beam; and a beam resolving arrangement disposed in the path of the analyzed beam for permitting a preselected ion species to pass to the target element. The source arrangement includes an ion source arc chamber (460) having a font plate (495) with a rectangular exit aperture (496) having a width of about five millimetres and a length of 110 millimetres.

LINEAR CHARGED PARTICLE BEAM GENERATING DEVICE

PURPOSE: To generate high density plasma and improve efficiency of extracting a charged particle beam of large current density by attaining uniform and efficient generation of the plasma between electrodes, and preventing a charged particle from disappearing in the internal wall surface of an earth electrode. CONSTITUTION: A device comprises an earth electrode 1 of tubular shape formed with a discharge chamber 6 in the inside, bar-shaped electrode 2 provided in the axial center of the electrode 1, one and the other magnets 8, 9 alternately arranged along a peripheral direction of the earth electrode 1 with polarity of a magnetic pole different from each other and a charged particle drawing out hole 14 provided in at least one of the one magnets 9. Thus by promoting uniform thermoelectron emission by heating the bar-shaped electrode 2 to a high temperature, since the one and the other magnets 8, 9 reflect a charged particle, approaching the earth electrode 1, to the inside to prevent the ...

ИСТОЧНИК ИОНОВ

Изобретение относится к ионно-плазменной технологии и может быть использовано при разработке источников ионов. Технический результат - повышение эффективности работы источника ионов путем обеспечения температуры ионизируемого рабочего вещества, достаточной для получения необходимого давления паров и ионизации этого вещества. Источник ионов содержит разрядную камеру, являющуюся анодом, которая имеет отверстие для входа разрядного газа и отверстие для выхода получаемых ионов, катод, магнит и ионизируемое рабочее вещество. Ионизируемое рабочее вещество выполнено в виде пластины и размещено в зоне разряда разрядной камеры источника ионов на электрически соединенной с катодом подложке из тугоплавкого материала, на стороне, которая обращена к катоду. Для получения ионовв источнике ионов в качестве ионизируемого рабочего вещества использована монокристаллическая пластина кремния, которая размещена в зоне разряда разрядной камеры и закреплена на подложке из тантала, на стороне, которая обращена ...

КАТОД ДЛЯ РАСПЫЛЕНИЯ ИЛИ ЭЛЕКТРОДУГОВОГО ИСПАРЕНИЯ (ВАРИАНТЫ) И УСТРОЙСТВО ДЛЯ ПОКРЫТИЯ ИЛИ ИОННОЙ ИМПЛАНТАЦИИ ПОДЛОЖЕК

... 1. Катод для распыления или электродугового испарения, имеющий форму стержня прямоугольного поперечного сечения, отличающийся тем, что длина стержня больше любого размера прямоугольного поперечного сечения, внешняя поверхность катода имеет четыре стороны и два корца, четыре стороны содержат первую пару параллельных сторон и вторую пару параллельных сторон, а так же испаряемую поверхность, содержащую по меньшей мере один материал, подлежащий испарению, при этом испаряемая поверхность составлена из обоих компонентов первой параллельной пары сторон и обоих торцов катода, испаряемая поверхность имеет две кромки, причем каждая кромка определяется пересечением испаряемой поверхности с одной из параллельных сторон второй пары, а средство генерации магнитного поля выполнено с возможностью создания вблизи испаряемой поверхности магнитного поля, причем магнитное поле представлено линиями магнитной индукции, магнитное поле имеет составляющую по всей испаряемой поверхности, которая параллельна испаряемой ...

END-HALL-IONENQUELLE.

Apparatus and method relating to ion beams and gaseous plasma

An ion source for the production of an ion beam or series of ion beams having a high uniformity is based on the concept of extracting an ion beam through a plurality of virtual magnetic poles provided for the purpose of containing a plasma. A virtual pole is an apparent N or S pole cusp position, when there is not physically a magnet at this position. An array of virtual poles 24 (Figure 6) is formed by aligning magnets 13 with like poles 28 facing each other forming pairs of virtual poles 24 along each mid position line 27 between the magnets. The field around the virtual poles 24 has four cusps, namely: two cusps 26 of the virtual poles 24, lying on the mid line 27 which is the axis of the virtual poles 24; and two cusps 25 at the real poles 28 of the magnets 13. In a practical construction (Figure 8A) the magnets 13 are contained within a series of tubes 41 each having triangular external section, and forming in combination an outlet electrode 31 shaped for the requirements of ion extraction ...

ION SOURCE

... 1497913 Ion sources INTERNATIONAL BUSINESS MACHINES CO 30 Oct 1975 [29 Nov 1974] 44801/75 Heading H1D An ion source comprises a first chamber 12 and a second chamber 26 separated by an apertured wall 28, the first chamber 12 containing an inert gas, e.g. argon, helium or hydrogen which is ionised by an arc between a thermionic filament and the wall of the chamber, electrons from the first chamber passing into the second chamber 26 where a reactive substance, such as boron, phosphorus, arsenic or antimony, is ionized by a separate arc, the ions being extracted via aperture 38 and there being a magnetic field along the axes of the two chambers provided by a coil 48. The separation of the two chambers is said to prevent contamination of the filament by the reactive substance. The first chamber is cooled by fluid passing through conduits 18 and channels 18. Voltages are supplied along leads 70 and 72 to the respective chamber walls and along leads 22 to the filament 20. In Fig. 2 (not shown ...

MULTI-CATHODE METAL VAPOR ARC ION SOURCE

Methods and apparatus for altering material using ion beams

SELECTIVE SOURCE Of IONS OF VERY GREAT INTENSITY

DOUBLE CHAMBER OF IONS SOURCE

ION SOURCE AND METHOD FOR OPERATING SAME

Provided is an ion source which can generate an ion beam having a large width, a large beam current and excellent uniformity in beam current distribution in the width direction, and furthermore, can lengthen the life of a cathode. An ion source (2a) is provided with a plasma generating container (6) having an ion extracting port (8) extending in an X direction; a magnet (14) for generating a magnetic field (16) along the X direction in the container (6); indirectly heating cathodes (20), which are arranged on the both sides of the plasma generating container (6) in the X direction and are used for generating plasma (10) in the container (6) and for increasing/reducing density of the plasma (10) as a whole; and a plurality of filament cathodes (32), which are arranged in parallel along the X direction in the plasma generating container (6), and are used for generating the plasma (10) in the container (6) and for controlling density distribution of the plasma (10).

Ion source device and ion beam generating method

An ion source device has a configuration in which a cathode is provided in an arc chamber having a space for plasma formation, and a repeller is disposed to face a thermal electron discharge face of the cathode by interposing the space for plasma formation therebetween. An external magnetic field that is induced by a source magnetic field unit is applied to the space for plasma formation in a direction parallel to an axis that connects the cathode and the repeller. An opening is provided in a place corresponding to a portion in the repeller with the highest density of plasma that is formed in the space for plasma formation, and an ion beam is extracted from the opening.

Cold-cathode, ion-generating and ion-accelerating universal device

The device comprises an ionizing unit for the production of low-energy (100-1000 eV) ions (FIG. 2a) with a second negative medium voltage (-100 to -1000 V) grid (6') cathode (6), a second also grid (13') and low-voltage (0 to +100 V) anode (13) and a third medium voltage (-100 to -1000 V) accelerating cathode (12, 12'), to extract the ions from the unit of three grids (6', 13',12'). For the production of high-energy (from 10 to beyond 200 keV) ions (FIG. 3a) there are provided in succession starting from target (2): a first low-voltage (0 to +100 V) anode (7', 7"), a second low-voltage (0 to +50 V) grid (13IV) anode (13), the second anode which cooperates to form with its central opening (13") an acceleration lens of the ion beam, a second medium negative voltage (-500 to -3000 V) grid (6") accelerating cathode (6) and a third accelerating cathode (12, 12") which, with its central opening 12", completes the acceleration lenses, the entire unit being arranged so as to direct the ion beam ...

Ion generating source for use in an ion implanter

End-hall ion source

ION SOURCE AND ION GENERATING METHOD

PURPOSE: To increase the generating amount of multivalent ions in an ion source to be employed for semiconductor manufacturing equipment. CONSTITUTION: Univalent and multivalent ions produced in an arc chamber 3 are extracted to a filter chamber 15 by an electric field produced by a filter electric power source 17. When the multivalent ions reach a multivalent ion chamber 16, the electric field attributed to the filter electric power source 17 is reversed to turn back the univalent ions to the arc chamber. Consequently, the generating amount of multivalent ions by ionization can be increased. COPYRIGHT: (C)1996,JPO ...

СПОСОБ ПОЛУЧЕНИЯ ИОННОГО ЛУЧА

Изобретение относится к электронике, а более конкретно к способам получения ионного луча. Технический результат - повышение сфокусированности луча при малой интенсивности ионного луча прямолинейной направленности. Поток электронов и первичный ионный луч создают от мишени к зонду путем последовательного воздействия прямым электрическим, магнитным и обратным электрическим полями, затем между мишенью и зондом устанавливают подложку и вновь воздействуют прямым электрическим полем, причем мишень и подложку предварительно электрически связывают и создают вторичный ионный луч. 2 ил.

Ion sources

The invention relates to improving the efficiency of ion flow from an ion source, for use in devices such as ion implatation devices, by reducing heat loss from the source both in the ion chamber of the ion source and its constituent parts (e.g. the electron source). This is achieved by lining the interior of the ion chamber and/or the exterior with heat reflective and/or heat insulating material 39,41,43,45, and by formation of an indirectly heated cathode tube such that heat transfer along the tube 46 and away from the ion chamber is restricted by the formation of slits in the tube. Efficiency of the ion source is further enhanced by impregnating and/or coating the front plate 102 of the ion chamber with a material which comprises an element or compound thereof, the ions of which element are the same specie as those to be implanted into the substrate from the source thereof.

NEGATIVE ION SOURCE

Apparatus and method relating to ion beams and gaseous plasma

DOUBLE CHAMBER ION SOURCE

DOUBLE CHAMBER ION SOURCE The ion source is comprised of two discharge chambers one of which is provided with a filament and an aperture leading into the other chamber which in turn has an extraction orifice. A low voltage arc discharge is operated in an inert gas atmosphere in the filament chamber while an arc of higher voltage is operated in the second ionization chamber which contains a vapor which will give the desired dopant ion species. The entire source is immersed in an axial magnetic field parallel to a line connecting the filament, the aperture between the two chambers and the extraction orifice.

METHOD OF CLEANING ION SOURCE, AND CORRESPONDING APPARATUS/SYSTEM

A method and/or system for cleaning an ion source is/are provided. In certain embodiments of this invention, both the anode and cathode of the ion source are negatively biased during at least part of a cleaning mode. Ions generated are directed toward the anode and/or cathode in order to remove undesirable build-ups from the same during cleaning.

ION SOURCE WITH SUBSTANTIALLY PLANAR DESIGN

ION ACCELERATOR

An ion accelerator comprises: an inner magnet (10) having a channel (34) extending through it in an axial direction; an outer magnet (12) extending around the inner magnet (10), the magnets having like polarities so as to produce a magnetic field having two locations of zero magnetic field strength. The locations are spaced apart in the axial direction; and an anode (38) and a cathode (36) are arranged to generate an electrical potential difference between the locations.

END-HALL ION SOURCE WITH ENHANCED RADIATION COOLING

In accordance with one embodiment of the present invention, an end-Hall ion source has an electron emitting cathode, an anode, a reflector, an internal pole piece, an external pole piece, a magnetically permeable path, and a magnetic-field generating means located in the permeable path between the two pole pieces. The anode and reflector are enclosed without contact by a thermally conductive cup that has internal passages through which a cooling fluid can flow. The closed end of the cup is located between the reflector and the internal pole piece and the opposite end of the cup is in direct contact with the external pole piece, and wherein the cup is made of a material having a low microhardness, such as copper or aluminum.

LOOPED IONIZATION SOURCE

Looped ionization sources for ion mobility spectrometers are described. The ionization sources can be used to ionize molecules from a sample of interest in order to identify the molecules based on the ions. In an implementation, an electrical ionization source includes a wire that is looped between electrical contacts. The wire is used to form a corona responsive to application of voltage between the wire and the walls of an ionization chamber. The corona can form when a sufficient voltage is applied between the wire and the walls. A difference in electrical potential between the wire and a wall forming an ionization chamber, in which wire is contained, can be used to draw the ions away from the wire. In embodiments, the wire can be heated to reduce the voltage used to strike the corona. The ions, subsequently, may ionize the molecules from the sample of interest. The looped corona source can also be used in mass spectrometers (MS).

PLASMA ACCELERATOR WITH CLOSED ELECTRON DRIFT

PULSED ION BEAM ASSISTED DEPOSITION

The present invention is for a high-speed, commercial-scale means for deposition of films and coatings on a substrate. The PIBAD (pulsed ion beam assisted deposition) processes ¢Fig. 4! allow notonly deposition, but also special modes of post-deposition treatment of films and coatings, including annealing melting and regrowth ¢Fig. 4A!, shock wave treatment, and high-pressure plasma redeposition ¢Fig. 4B! all of which can alter the mechanical, cohesive, and corrosive properties of the final product. In one embodiment of the invention the power system comprises a motor (5) which drives an alternator (10). The alternator delivers a signal to a pulse compression system (15) which has two subsystems, a 1.mu.s pulse compressor (12), and a pulse forming line (14). The pulse compression system (15) provides pulses to a linear inductive voltage adder (LIVA)(20) which delivers the pulses to the ion beam source (25).

Лазерно-плазменный инжектор ионов с динамической электромагнитной фокусировкой ионного пучка

Предложен лазерно-плазменный инжектор ионов с динамической электромагнитной фокусировкой ионного пучка, состоящий из: лазера, световое излучение которого, попадая на мишень, образует плазму, дрейфующую в пролетном канале, мишени, пролетного канала, на выходе которого установлен датчик тока для измерения токовых и временных параметров плазмы и ионно-оптической системы (ИОС), на электродах которой существуют неизменяющиеся по величине электрические потенциалы. При этом на выходе ИОС установлена периодическая линзовая система, состоящая из трех расположенных вдоль продольной оси ионного пучка собирающих магнитных линз, выполненных в виде соленоидов с экранами. Первый соленоид, считая от ИОС, электрически подключен к генератору импульсов тока линейно изменяющейся величины, который электрически связан с лазером и датчиком тока. Датчик тока установлен в плазме на выходе пролетного канала и электрически связан с входом генератора импульсов тока линейно изменяющейся величины и установлен на выходе пролетного канала перед ИОС, которая осуществляет отбор ионов из плазмы, формирование и дальнейшее ускорение ионного пучка. Второй соленоид, считая от ИОС, электрически подключен к усилителю тока «У», который электрически связан с тем же датчиком тока. Третий, по счету от ИОС, соленоид установлен на выходе периодической линзовой системы и электрически подключен к отдельному источнику электропитания. Этот соленоид позволяет задавать требуемый угол наклона огибающей ионного пучка после компенсации его углового расхождения, связанного с нестабильностью положения плазменной границы эмиссии ионов. Предложенная конструкция позволяет непрерывно осуществлять поэтапную динамическую фокусировку экстрагированного из лазерной плазмы ионного пучка, обладающего большой кинетической энергией движения, при помощи системы отдельно взятых фокусирующих линз. Жесткость фокусировки в первых двух линзах поставлена в зависимость от скорости движения лазерной плазмы в пролетном канале и от изменения ее ...

Method for extending lifetime of an ion source

This invention relates in part to a method for preventing or reducing the formation and/or accumulation of deposits in an ion source component of an ion implanter used in semiconductor and microelectronic manufacturing. The ion source component includes an ionization chamber and one or more components contained within the ionization chamber. The method involves introducing into the ionization chamber a dopant gas, wherein the dopant gas has a composition sufficient to prevent or reduce the formation of fluorine ions/radicals during ionization. The dopant gas is then ionized under conditions sufficient to prevent or reduce the formation and/or accumulation of deposits on the interior of the ionization chamber and/or on the one or more components contained within the ionization chamber. The deposits adversely impact the normal operation of the ion implanter causing frequent down time and reducing tool utilization.

Ion implantation system and method

An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.

Transformer-coupled rf source for plasma processing tool

A RF source and method are disclosed which inductively create a plasma within an enclosure without an electric field or with a significantly decreased creation of an electric field. A ferrite material with an insulated wire wrapped around its body is used to efficiently channel the magnetic field through the legs of the ferrite. This magnetic field, which flows between the legs of the ferrite can then be used to create and maintain a plasma. In one embodiment, these legs rest on a dielectric window, such that the magnetic field passes into the chamber. In another embodiment, the legs of the ferrite extend into the processing chamber, thereby further extending the magnetic field into the chamber. This ferrite can be used in conjunction with a PLAD chamber, or an ion source for a traditional beam line ion implantation system.

Target for generating carbon ions and treatment apparatus using the same

Provided are a carbon ion generation target and a treatment apparatus including the same. The treatment apparatus includes a support member, a carbon ion generation target fixed to the support member, and a laser for irradiating laser beam into the carbon ion generation target to generate carbon ions from the carbon ion generation target, thereby projecting the carbon ions onto a tumor portion of a patient. Here, the carbon ion generation target includes a substrate and carbon thin films disposed on the substrate.

Automatic Control System for Selection and Optimization of Co-Gas Flow Levels

An ion implantation system for improving performance and extending lifetime of an ion source is disclosed whereby the selection, delivery, optimization and control of the flow rate of a co-gas into an ion source chamber is automatically controlled.

SWITCHABLE GAS CLUSTER AND ATOMIC ION GUN, AND METHOD OF SURFACE PROCESSING USING THE GUN

A method of processing one or more surfaces is provided, comprising: providing a switchable ion gun which is switchable between a cluster mode setting for producing an ion beam substantially comprising ionised gas clusters for irradiating a surface and an atomic mode setting for producing an ion beam substantially comprising ionised gas atoms for irradiating a surface; and selectively operating the ion gun in the cluster mode by mass selecting ionised gas clusters using a variable mass selector thereby irradiating a surface substantially with ionised gas clusters or the atomic mode by mass selecting ionised gas atoms using a variable mass selector thereby irradiating a surface substantially with ionised gas atoms. Also provided is a switchable ion gun comprising: a gas expansion nozzle for producing gas clusters; an ionisation chamber for ionising the gas clusters and gas atoms; and a variable (preferably a magnetic sector) mass selector for mass selecting the ionised gas clusters and ionised gas atoms to produce an ion beam variable between substantially comprising ionised gas clusters and substantially comprising ionised gas atoms. Preferably, the gun comprises an electrically floating flight tube for adjusting the energy of the ions whilst within the mass selector. 1. A method of processing one or more surfaces , the method of processing comprising:providing a switchable ion gun which is switchable between a cluster mode setting for producing an ion beam substantially comprising ionised gas clusters for irradiating a surface and an atomic mode setting for producing an ion beam substantially comprising ionised gas atoms for irradiating a surface; andselectively operating the ion gun in the cluster mode by mass selecting ionised gas clusters using a variable mass selector thereby irradiating a surface substantially with ionised gas clusters, or in the atomic mode by mass selecting ionised gas atoms using the variable mass selector thereby irradiating a surface ...

Liquid metal ion source and secondary ion mass spectrometric method and use thereof

A liquid metal ion source for use in an ion mass spectrometric analysis method contains, on the one hand, a first metal with an atomic weight ≧190 U and, on the other hand, another metal with an atomic weight ≦90 U. One of the two types of ions are filtered out alternately from the primary ion beam and directed onto the target as a mass-pure primary ion beam.

METHOD AND APPARATUS FOR A POROUS ELECTROSPRAY EMITTER

An ionic liquid ion source can include a microfabricated body including a base and a tip. The body can be formed of a porous material compatible with at least one of an ionic liquid or room-temperature molten salt. The body can have a pore size gradient that decreases from the base of the body to the tip of the body, such that the at least one of an ionic liquid or room-temperature molten salt is capable of being transported through capillarity from the base to the tip. 1. An ionic liquid ion source comprising:a body comprising a base and a tip and formed of a porous material compatible with at least one of an ionic liquid or room-temperature molten salt; andthe body having a pore size gradient that decreases from the base of the body to the tip of the body, such that the at least one of an ionic liquid or room-temperature molten salt is capable of being transported through capillarity from the base to the tip.2. The ionic liquid ion source of wherein the at least one of an ionic liquid or room-temperature molten salt is capable of being continuously transported through capillarity from the base to the tip.3. The ionic liquid ion source of wherein the body is a cylindrical needle.4. The ionic liquid ion source of wherein the body is a flat ribbon-like needle.5. The ionic liquid ion source of wherein the tip is formed by at least one of chemical wet etching claim 1 , plasma dry etching claim 1 , ion beam milling claim 1 , laser milling claim 1 , chemical vapor deposition claim 1 , physical vapor deposition claim 1 , or nano-bead deposition.6. The ionic liquid ion source of wherein the porous material comprises a dielectric material.7. The ionic liquid ion source of wherein the dielectric material comprises at least one of a ceramic material claim 6 , a glass material or other oxide material.8. The ionic liquid ion source of wherein a radius of curvature of the tip is approximately 1-20 μm.9. An ionic liquid ion source comprising:a plurality of emitters formed of a ...

Method and Apparatus for Actively Monitoring an Inductively-Coupled Plasma Ion Source using an Optical Spectrometer

A method and apparatus for actively monitoring conditions of a plasma source for adjustment and control of the source and to detect the presence of unwanted contaminant species in a plasma reaction chamber. Preferred embodiments include a spectrometer used to quantify components of the plasma. A system controller is provided that uses feedback loops based on spectral analysis of the plasma to regulate the ion composition of the plasma source. The system also provides endpointing means based on spectral analysis to determine when cleaning of the plasma source is completed.

TARGET FOR GENERATING ION AND TREATMENT APPARATUS USING THE SAME

Provided are an ion generation target and a treatment apparatus using the same. The treatment apparatus includes an ion generation material generating the ions by incident laser beam, the ion generation material generating a bubble having a hemispheric shape, a support supporting the bubble having the hemispheric shape, a bubble generation member for generating the bubble having the hemispheric shape on the support by using the ion generation material, and a laser radiating laser beam onto a surface of the bubble to generate ions from the ion generation material, thereby projecting the ions onto a tumor portion of a patient. 1. An ion generation target comprising:an ion generation material generating the ions by incident laser beam, the ion generation material generating a bubble having a hemispheric shape; anda support supporting the bubble having the hemispheric shape.2. The ion generation target of claim 1 , wherein the ions are protons or carbon ions.3. The ion generation target of claim 2 , wherein the ions are the protons claim 2 , and the ion generation material is water.4. The ion generation target of claim 2 , wherein the ions are the carbon ions claim 2 , and the ion generation material is oil containing a carbon component.5. The ion generation target of claim 1 , wherein the support is a transparent substrate or a ring type bubble support.6. The ion generation target of claim 1 , wherein a thickness of a membrane of the bubble is adjusted by viscosity of the ion generation material.7. The ion generation target of claim 1 , wherein the ion generation material further comprises graphene powder or graphite powder.8. An ion beam treatment apparatus comprising:an ion generation target comprising an ion generation material generating the ions by incident laser beam, the ion generation material generating a bubble having a hemispheric shape and a support supporting the bubble having the hemispheric shape;a bubble generation member for generating the bubble ...

System and method of ion neutralization with multiple-zoned plasma flood gun

An apparatus comprises a plasma flood gun for neutralizing a positive charge buildup on a semiconductor wafer during a process of ion implantation using an ion beam. The plasma flood gun comprises more than two arc chambers, wherein each arc chamber is configured to generate and release electrons into the ion beam in a respective zone adjacent to the semiconductor wafer.

ION TRANSFER DEVICE

There is provided a transfer device () that transfers ionized substances in a first direction. The transfer device () includes a drift tube () and the drift tube () includes electrode plates () and () constructing an outer wall and a plurality of ring electrodes () disposed inside the tube. The ring electrodes () forms a first AC electric field for linear driving that causes the ionized substances to travel in the first direction that is the axial direction. The electrode plates () and () form an asymmetric second AC electric field that deflects the direction of travel of the ionized substances. 115-. (canceled)16. A transfer device that transfers ionized substances in a first direction , comprising:a plurality of ring-shaped first electrodes disposed in a line in the first direction, regularly reverse a direction of electric fields formed between at least some adjacent electrodes out of the plurality of first electrodes, and form a plurality of first alternating current electric field for linear driving that causes at least some of the ionized substances to travel in the first direction; anda plurality of second electrodes that are disposed outside the plurality of first electrodes, are aligned in a second direction that is perpendicular to the first direction, and form at least part of a flow path of the ionized substances, the plurality of second electrodes forming a common second alternating current electric field in a direction that is perpendicular to the plurality of first alternating current electric fields formed by the plurality of first electrodes and forming the second alternating current electric field that is asymmetric and deflects a direction of travel of the ionized substances in the second direction.17. The transfer device according to claim 16 ,wherein the plurality of second electrodes include two facing electrodes that form a cylindrical flow path and the plurality of first electrodes are disposed along a center axis of the cylindrical flow path ...

Method and apparatus for cleaning residue from an ion source component

Some techniques disclosed herein facilitate cleaning residue from a molecular beam component. For example, in an exemplary method, a molecular beam is provided along a beam path, causing residue build up on the molecular beam component. To reduce the residue, the molecular beam component is exposed to a hydro-fluorocarbon plasma. Exposure to the hydro-fluorocarbon plasma is ended based on whether a first predetermined condition is met, the first predetermined condition indicative of an extent of removal of the residue. Other methods and systems are also disclosed.

IMAGING AND PROCESSING FOR PLASMA ION SOURCE

Applicants have found that energetic neutral particles created by a charged exchange interaction between high energy ions and neutral gas molecules reach the sample in a ion beam system using a plasma source. The energetic neutral create secondary electrons away from the beam impact point. Methods to solve the problem include differentially pumped chambers below the plasma source to reduce the opportunity for the ions to interact with gas. 1. A charged particle beam system comprising:a plasma chamber for containing a plasma;a source electrode for biasing the plasma to a voltage of at least 10,000 V;an extraction electrode for extracting ions from the plasma chamber;a focusing lens for focusing the ions into a beam directed toward the work piece;a sample chamber for containing a work piece, the sample chamber connected to a vacuum pump; anda first intermediary vacuum chamber connected at one end to the plasma chamber and at the other end through a differential pumping aperture to the sample chamber or to one or more additional intermediary vacuum chamber, the first intermediary vacuum chamber connected to a vacuum pump, the first and the one or more additional intermediary vacuum chamber or chambers reducing the collision of the ion beam with neutral gas particles, thereby reducing the creation of energetic neutral particles that impact the work piece.2. The charged particle beam system of further comprising at least one additional intermediary vacuum chamber between the first intermediary vacuum chamber and the sample chamber claim 1 , each of the at least one additional intermediary vacuum chambers connected to a vacuum pump and separated from the preceding and succeeding chambers by differential pumping apertures.3. The charged particle beam system of in which each of the additional intermediary vacuum chamber has a lower pressure than the immediately preceding intermediary vacuum chamber.4. The charged particle beam system of in which each of the additional ...

METHOD AND APPARATUS FOR A POROUS ELECTROSPRAY EMITTER

An ionic liquid ion source can include a microfabricated body including a base and a tip. The body can be formed of a porous material compatible with at least one of an ionic liquid or room-temperature molten salt. The body can have a pore size gradient that decreases from the base of the body to the tip of the body, such that the at least one of an ionic liquid or room-temperature molten salt is capable of being transported through capillarity from the base to the tip. 1. A method of forming one or more emitter bodies made of porous ceramic xerogel comprising:preparing a gel solution comprising a solvent, an acidic aluminum salt, a polymer, and a proton scavenger;providing a mold for one or more emitter bodies, each emitter body of the one or more emitter bodies comprising a base and a tip;pouring the gel solution into the mold;drying the gel solution in the mold to form the one or more emitter bodies made from the porous ceramic xerogel.2. The method of further comprising:mixing aluminum chloride hexahydrate, polyethylene oxide, water, ethanol, and propylene oxide to form the gel solution.3. The method of further comprising:mixing 1 part by mass of polyethylene oxide, 50 parts by mass water, 54.4 parts by mass ethanol, 54.4 parts by mass propylene oxide, and 54 parts by mass of aluminum chloride hexahydrate to form the gel solution.4. The method of further comprising:forming the mold from one or more of polydimethylsiloxane (PDMS), polytetrafluoroethylene (PTFE), polymers, fluoropolymers, paraffin wax, silica, glass, aluminum, and stainless steel.5. The method of claim 1 , wherein the porous ceramic xerogel is alumina xerorgel.6. The method of claim 1 , wherein the porous ceramic xerogel comprises pores approximately 3-5 μm in diameter.7. A method of forming one or more emitter bodies made from porous ceramic material comprising:preparing a slurry of at least silica, water, and a ceramic component;providing a mold for one or more emitter bodies, each emitter body ...

SILICON-CONTAINING DOPANT COMPOSITIONS, SYSTEMS AND METHODS OF USE THEREOF FOR IMPROVING ION BEAM CURRENT AND PERFORMANCE DURING SILICON ION IMPLANTATION

A novel composition, system and method thereof for improving beam current during silicon ion implantation are provided. The silicon ion implant process involves utilizing a first silicon-based co-species and a second species. The second species is selected to have an ionization cross-section higher than that of the first silicon-based species at an operating arc voltage of an ion source utilized during generation and implantation of active silicon ions species. The active silicon ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated solely from SiF4. 1. A dopant gas composition comprising:a silicon-based dopant gas composition comprising a first silicon-based species and a second species, wherein said second species is selected to have a ionization cross-section higher than that of the first silicon-based species at an operating arc voltage of an ion source utilized during generation and implantation of active silicon ions;wherein said silicon-based dopant gas composition improves the ion beam current so as to maintain or increase beam current without degradation of said ion source in comparison to a beam current generated from silicon tetrafluoride (SiF4).2. The dopant gas composition of claim 1 , wherein said first silicon-based species is selected from the group consisting of SiH2Cl2 claim 1 , Si2H6 claim 1 , SiH4 SiF2H2 claim 1 , SiF4 and any combination thereof.3. The dopant composition of claim 1 , wherein said first silicon-based species is SiF4.4. The dopant composition of claim 1 , wherein said first silicon-based species is SiF4 and the second species is disilane (S2H6).5. The dopant composition of claim 4 , wherein said S2H6 has a concentration of less than 50% based on the overall volume of said composition.6. The dopant composition of claim 5 , wherein said S2H6 has a concentration of about 10% or less.7. A system ...

SYSTEMS AND METHODS FOR MONITORING FAULTS, ANOMALIES, AND OTHER CHARACTERISTICS OF A SWITCHED MODE ION ENERGY DISTRIBUTION SYSTEM

Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis. 1. A system for monitoring of a plasma processing chamber , the system comprising:a plasma processing chamber configured to contain a plasma;a substrate support positioned within the plasma processing chamber and disposed to support a substrate,an ion-energy control portion, the ion-energy control portion provides at least one ion-energy control signal responsive to at least one ion-energy distribution setting that is indicative of a desired ion energy distribution at the surface of the substrate;a switch-mode power supply coupled to the substrate support and the ion-energy control portion, the switch-mode power supply including one or more switching components configured to apply power to the substrate as a periodic voltage function;an ion current compensation component coupled to the substrate support, the ion current compensation component adding an ion compensation current to the periodic voltage function to form a modified periodic voltage function; anda controller coupled to the substrate support, the controller determining an ion current in the plasma processing chamber from the ion compensation current and comparing the ion current to a reference current waveform.2. The system of claim 1 , wherein the controller compares the modified periodic voltage function to a reference voltage waveform.3. ...

Cluster beam generating apparatus, substrate processing apparatus, cluster beam generating method, and substrate processing method

A cluster beam generating method that generates a cluster beam includes steps of mixing a gas source material and a liquid source material in a mixer; supplying a cluster beam including clusters originating from the gas source material and clusters originating from the liquid source material that are mixed in the mixer from a nozzle; and adjusting a temperature of the nozzle using a temperature adjusting portion that adjusts a temperature of the nozzle, thereby controlling a ratio of the clusters originating from the gas source material and the clusters originating from the liquid source material in the cluster beam.

SINGLE BEAM PLASMA SOURCE

A single beam plasma or ion source apparatus, including multiple and different power sources, is provided. An aspect of the present apparatus and method employs simultaneous excitation of an ion source by DC and AC, or DC and RF power supplies. Another aspect employs an ion source including multiple magnets and magnetic shunts arranged in a generally E cross-sectional shape. 1. An ion source apparatus comprising:(a) an anode comprising at least one magnetic conductor and an open plasma area being located within a hollow central area of the anode;(b) a cathode comprising a cap having an outlet opening therethough;(c) a direct current power source connected to the anode;(d) an alternating current or radio frequency power source connected to the anode; and(e) ionization operably occurring within the plasma area inside the anode at least partially due to excitation by the direct and alternating current power sources.2. The apparatus of claim 1 , wherein the at least one magnetic conductor comprises multiple magnets or magnetic shunts which create a magnetic flux with a central dip in an open space wherein the plasma is created.3. The apparatus of claim 2 , wherein the magnets or magnetic shunts are arranged in a substantially E cross-sectional shape claim 2 , and with a body or the cap of the cathode being a magnetic metal.4. The apparatus of claim 1 , wherein:the cap of the cathode is magnetic and removable;the cap is isolated from a body of the anode which surrounds the at least one magnetic conductor of the anode; andan ion source discharge voltage is between 1-10 volts.5. The apparatus of claim 1 , further comprising:a sputtering source acted upon by ions emitted through the outlet opening; anda vacuum chamber within which is located the anode and the cathode, the chamber having an operating pressure of 1 mTorr to 500 mTorr.6. The apparatus of claim 1 , further comprising ions emitted through the outlet opening performing cleaning or evaporation deposition of thin ...

GeH4/Ar Plasma Chemistry For Ion Implant Productivity Enhancement

A method for improving the beam current for certain ion beams, and particularly germanium and argon, is disclosed. The use of argon as a second gas has been shown to improve the ionization of germane, allowing the formation of a germanium ion beam of sufficient beam current without the use of a halogen. Additionally, the use of germane as a second gas has been shown to improve the beam current of an argon ion beam. 1. A method of generating an argon ion beam , comprising:introducing germane and argon into an ion source;ionizing the germane and argon to form a plasma; andextracting argon ions from the ion source to form the argon ion beam, wherein a flow rate of germane is between 0.35 and 1.00 sccm.2. The method of claim 1 , wherein the ion source comprises an indirectly heated cathode ion source.3. The method of claim 1 , wherein the ion source comprises an RF ion source.4. The method of claim 1 , wherein the ion source comprises a Bernas source claim 1 , a capacitively coupled plasma source claim 1 , an inductively coupled source claim 1 , or a microwave coupled plasma source.5. The method of claim 1 , wherein no halogen gasses are introduced into the ion source.6. The method of claim 1 , wherein the ion source is a component of a beam-line implantation system.7. A method of generating an argon ion beam claim 1 , comprising:introducing germane and argon into an ion source;ionizing the germane and argon to form a plasma; and extracting argon ions from the ion source to form the argon ion beam,wherein a flow rate of germane is such that a beam current of the argon ion beam is increased at least 10% relative to an argon ion beam generated without use of germane at a same extraction current.8. The method of claim 7 , wherein a flow rate of germane is such that a beam current of the argon ion beam is increased at least 15% relative to the argon ion beam generated without use of germane at a same extraction current.9. The method of claim 7 , wherein no halogen gasses ...

ANTENNA ARRANGEMENT

An antenna arrangement on a printed circuit board with at least two magnetic rings and a rectangular ring cross section and lateral magnetic ring surfaces with opposite polarity formed thereby wherein the magnetic ring surfaces are arranged on the printed circuit board with a distance from one another using a spacer, wherein the opposite polarities of the magnetic ring surfaces are oriented towards each other and the central bore holes of the magnetic ring form a pass through bore hole through a bore hole in the spacer. This antenna arrangement is configured for a material detector device which detecting predetermined materials over a distance. The antenna arrangement is infinitely expandable in its operation by increasing the number of the magnetic rings and of the respective spacers. Being compact the antenna arrangement easily integrates into existing devices and can be produced in a cost effective manner. 1. An antenna arrangement for a material detecting device for locating objects made from a particular predeterminable material by emitting an ion beam and receiving a returning ion beam that is reflected by the object , wherein properties of the material to be detected cause a reflection of the ion beam , the antenna arrangement comprising:a printed circuit board at least configured for receiving electronic circuits and components of an antenna circuit; andan antenna and electrical connection conductors to the antenna,wherein the antenna emits and receives the ion beam and the antenna circuit generates a transmission signal and processes a return signal,wherein the antenna includes at least two magnetic rings with a rectangular ring cross section and lateral magnetic ring surfaces thus formed with opposite polarity forming electrodes which are arranged on the printed circuit board by at least one spacer including a bore hole at a distance from one another,wherein opposite polarities of the magnetic ring surfaces are oriented towards one another and the central ...

APPARATUS AND TECHNIQUES TO TREAT SUBSTRATES USING DIRECTIONAL PLASMA AND POINT OF USE CHEMISTRY

In one embodiment, an apparatus to treat a substrate may include an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate. The plasma beam may comprise ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; and a gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber. 1. A method of treating a substrate , comprising:extracting a plasma beam from a plasma, wherein the plasma beam comprises ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; anddirecting a reactive gas from a gas source to the substrate, wherein the reactive gas does not pass through the plasma.2. The method of claim 1 , wherein the directing the reactive gas comprises providing a gas comprising a polar molecule to the substrate claim 1 , wherein the ions are inert gas ions that sputter etch a metal species from a metal layer disposed on the substrate claim 1 , and wherein the polar molecule forms a volatile etch product with the metal species.3. The method of claim 2 , wherein the directing the reactive gas comprises forming a conformal coating derived from the reactive gas on the metal layer.4. The method of claim 2 , wherein the substrate comprises at least one surface feature having a sidewall claim 2 , wherein the reactive gas and plasma beam etch the metal layer without redeposition of material from the metal layer on the sidewall.5. The method of claim 2 , wherein the reactive gas comprises a polar molecule claim 2 , wherein the metal comprises at least one of Ta claim 2 , Pt claim 2 , Ru claim 2 , Ti claim 2 , Cu claim 2 , Fe claim 2 , and Co.6. A method of treating a substrate claim 2 , comprising:extracting a plasma beam from a plasma in a ...

CHARGED PARTICLE BEAM SYSTEM AND METHOD OF OPERATING A CHARGED PARTICLE BEAM SYSTEM

The present disclosure relates to a gas field ion source having a gun housing, an electrically conductive gun can base attached to the gun housing, an inner tube mounted to the gun can base, the inner tube being made of an electrically isolating ceramic, an electrically conductive tip attached to the inner tube, an outer tube mounted to the gun can base, the outer tube being made of an electrically isolating ceramic, and an extractor electrode attached to the outer tube. The extractor electrode can have an opening for the passage of ions generated in proximity to the electrically conductive tip. 1. A gas field ion source , comprising:a gun housing,an electrically conductive gun can base attached to the gun housing,an inner tube mounted to the gun can base, the inner tube comprising an electrically isolating material,an electrically conductive tip attached to the inner tube,an outer tube mounted to the gun can base, the outer tube comprising an electrically isolating material, andan extractor electrode attached to the outer tube, the extractor electrode having an opening for the passage of ions generated in proximity to the electrically conductive tip.2. The gas field ion source of claim 1 , further comprising a gas supply comprising a terminating tube attached to the gun can base.3. The gas field ion source of claim 2 , wherein the gas supply is configured to supply a first gas in a first mode of operation of the gas field ion source claim 2 , the gas supply is configured to supply a second gas in a second mode of operation claim 2 , and the first gas is different from the second gas.4. The gas field ion source of claim 2 , further comprising a vacuum pump operatively connected to the outer housing claim 2 , wherein the vacuum pump is configured to evacuate gas out of the outer housing.5. The gas field ion source of claim 1 , further comprising a thermal conductor connected to gun can base claim 1 , wherein the thermal conductor is thermally connected to a cooling ...

Charged Particle Beam System and Method of Operating a Charged Particle Beam System

The disclosure relates to a method of operating a gas field ion beam system in which the gas field ion beam system comprises an external housing, an internal housing, arranged within the external housing, an electrically conductive tip arranged within the internal housing, a gas supply for supplying one or more gases to the internal housing, the gas supply having a tube terminating within the internal housing, and an extractor electrode having a hole to permit ions generated in the neighborhood of the tip to pass through the hole into the external housing. The method comprises the step of regularly heating the external housing, the internal housing, the electrically conductive tip, the tube and the extractor electrode to a temperature of above 100° C. 1. A method , comprising: an external housing,', 'an internal housing within the external housing,', 'an electrically conductive tip within the internal housing,', 'a gas supply configured to supply a gas to the internal housing, the gas supply comprising a tube terminating within the internal housing, and', 'an extractor electrode having a hole configured to permit ions generated in the neighborhood of the tip to pass through the hole into the external housing, and, 'providing a gas field ion beam system, comprisingregularly heating the external housing, the internal housing, the electrically conductive tip, the tube and the extractor electrode to a temperature above 100° C.2. The method of claim 1 , wherein claim 1 , after heating the external housing claim 1 , the internal housing claim 1 , the electrically conductive tip claim 1 , the tube and the extractor electrode claim 1 , continuing to heat the electrically conductive tip while cooling the internal housing claim 1 , the tube and the extractor electrode to a cryogenic temperature.3. The method of claim 2 , further comprising cooling the external housing to room temperature before cooling the internal housing claim 2 , the tube and the extractor electrode to ...

CHARGED PARTICLE BEAM SYSTEM AND METHOD OF OPERATING A CHARGED PARTICLE BEAM SYSTEM

The present disclosure relates to a charged particle beam system, comprising a noble gas field ion beam source, a charged particle beam column, and a housing defining a first vacuum region and a second vacuum region. A noble gas field ion beam source is arranged within the first vacuum region. A first mechanical vacuum pump is functionally attached to the first vacuum region, an ion getter pump is attached to the charged particle beam column, and a gas supply is attached to the first vacuum region configured to supply a noble gas to the noble gas field ion beam source. 1. A charged particle beam system , comprising:a noble gas field ion beam source,a charged particle beam column,a housing defining a first vacuum region and a second vacuum region,a mechanical vacuum pump operationally attached to the first vacuum region,an ion getter pump attached to the charged particle beam column, anda gas supply attached to the first vacuum region,wherein the noble gas field ion beam source is arranged within the first vacuum region, and the gas supply is configured to supply a noble gas to the noble gas field ion beam source.2. The charged particle beam system of claim 1 , further comprising a sample chamber adjacent to the first vacuum region claim 1 , wherein the charged particle beam column is positioned between the first vacuum region and the sample chamber.3. The charged particle beam system of claim 1 , further comprising a control configured to switch-off the ion getter pump at times when the noble gas field ion beam source generates an ion beam.4. The charged particle beam system of claim 3 , wherein the control is configured to switch-on the ion getter pump only if a pressure within the first vacuum region is below a predefined pressure value.5. The charged particle beam system of claim 1 , further comprising:a heater, anda control configured to heat the heater to release atoms of the noble gas from the ion getter pump.6. The charged particle beam system of claim 1 , ...

CHARGED PARTICLE BEAM SYSTEM AND METHOD OF OPERATING A CHARGED PARTICLE BEAM SYSTEM

The present disclosure relates to a charged particle beam system comprising a charged particle beam source, a charged particle column, a sample chamber, a plurality of electrically powered devices arranged within or at either one of the charged particle column, the charged particle beam source and the sample chamber, and at least one first converter to convert an electrical AC voltage power into an electrical DC voltage. The first converter is positioned at a distance from either of the charged particle beam source, the charged particle column and the charged particle chamber, and all elements of the plurality of electrically powered devices, when operated during operation of the charged particle beam source, are configured to be exclusively powered by the DC voltage provided by the converter. 1. A charged particle beam system , comprising:a charged particle beam source,a charged particle column,a sample chamber,a plurality of electrically powered devices arranged within or at a member selected from the group consisting of the charged particle column, the charged particle beam source and the sample chamber,a first converter configured to convert an electrical AC voltage power into an electrical DC voltage, the first converter is positioned at a distance from a member selected from the group consisting of the charged particle beam source, the charged particle column and the charged particle chamber, and', 'all elements of the plurality of electrically powered devices are configured so that, when operated during operation of the charged particle beam source, they are exclusively powered by the DC voltage provided by the converter., 'wherein2. The charged particle beam system of claim 1 , wherein a smallest distance between the first converter and each of the charged particle beam source claim 1 , the charged particle column claim 1 , and the sample chamber is at least 2 meters.3. The charged particle beam system of claim 1 , further comprising a second converter ...

SWITCHABLE ION GUN WITH IMPROVED GAS INLET ARRANGEMENT

A switchable ion gun switchable between a cluster mode setting for producing an ion beam substantially comprising ionised gas clusters and an atomic mode setting for producing an ion beam substantially comprising ionised gas atoms, comprising: 1. A switchable ion gun switchable between a cluster mode setting for producing an ion beam substantially comprising ionised gas clusters and an atomic mode setting for producing an ion beam substantially comprising ionised gas atoms , comprising:a source chamber having a first gas inlet;a gas expansion nozzle for producing gas clusters in the presence of gas atoms by expansion of a gas from the source chamber through the nozzle;an ionisation chamber for ionising the gas clusters and gas atoms; wherein the ionisation chamber has a second gas inlet for admitting gas directly into the ionisation chamber to form ionised gas atoms; anda variable mass selector for mass selecting the ionised gas clusters and ionised gas atoms to produce an ion beam variable between substantially comprising ionised gas clusters and substantially comprising ionised gas atoms.2. A switchable ion gun as claimed in wherein the first and second gas inlets are controlled to allow gas through only one of the inlets at a time claim 1 , wherein the first inlet is operated to allow gas through in the cluster mode and the second inlet is operated to allow gas through directly into the ionisation chamber in the atomic mode.3. A switchable ion gun as claimed in wherein the variable mass selector is a magnetic sector or a Wien filter.4. A switchable ion gun as claimed in wherein the variable mass selector comprises a magnetic variable mass selector and an electrically floating ion optical device for adjusting the energy of the ions within the magnetic variable mass selector.5. A switchable ion gun as claimed in wherein the electrically floating ion optical device comprises an electrically floating flight tube and wherein the magnetic variable mass selector ...

ION IMPLANTER AND METHOD OF CONTROLLING THE SAME

An ion implanter includes a high-voltage power supply, a control unit that generates a command signal controlling an output voltage of the high-voltage power supply, an electrode unit to which the output voltage is applied, and a measurement unit that measures an actual voltage applied to the electrode unit. The control unit includes a first generation section that generates a first command signal for allowing the high-voltage power supply to output a target voltage, a second generation section that generates a second command signal for complementing the first command signal so that the actual voltage measured by the measurement unit becomes or close to the target voltage, and a command section that brings to the high-voltage power supply a synthetics command signal which is produced by synthesizing the first command signal and the second command signal. 1. An ion implanter comprising:a high-voltage power supply;a control unit that generates a command signal controlling an output voltage of the high-voltage power supply;an electrode unit to which the output voltage is applied; anda measurement unit that measures an actual voltage applied to the electrode unit,whereinthe control unit includes:a first generation section that generates a first command signal for allowing the high-voltage power supply to output a target voltage;a second generation section that generates a second command signal for complementing the first command signal so that the actual voltage measured by the measurement unit becomes the target voltage or a voltage close to the target voltage; anda command section that brings to the high-voltage power supply a synthetic command signal which is produced by synthesizing the first command signal and the second command signal.2. The ion implanter according to claim 1 , whereineach of the first generation section and the second generation section includes a D/A (Digital to Analog) converter that converts a digital command value into an analog command ...

ION BEAM SYSTEM

Provided is an ion beam system including a gas field ionization ion source which can obtain a high current sufficient for processing and stabilize an ion beam current. The ion beam system includes a gas field ionization ion source which includes: a vacuum vessel; an emitter tip holder disposed in the vacuum vessel; an emitter tip connected to the emitter tip holder; an extraction electrode opposed to the emitter tip; a gas supply portion for supplying a gas to the emitter tip; and a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder. The cold transfer member has its surface covered with a heat insulating material in order to prevent the gas condensation. 1. An ion beam system comprising: a gas field ionization ion source which includes: a vacuum vessel; an emitter tip holder disposed in the vacuum vessel; an emitter tip connected to the emitter tip holder; an extraction electrode opposed to the emitter tip; a gas supply portion for supplying a gas to the emitter tip; and a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder ,wherein the cold transfer member has its surface covered with a heat insulating material in order to prevent condensation of the gas.2. The ion beam system according to claim 1 ,wherein the cold transfer member is a metal thin film or a braided metal wire and has a heat insulating layer adhered to the surface thereof.3. The ion beam system according to claim 1 ,wherein the cold transfer member comprises a metal and the heat insulating material comprises a fluorine resin or ceramics.4. The ion beam system according to claim 1 ,wherein the gas is a gas containing any one of neon, argon, krypton and xenon.5. The ion beam system according to claim 1 ,wherein the gas is a gas containing any one of carbon monoxide, oxygen and nitrogen.6. The ion beam system according to claim 1 ,wherein the gas supply portion supplies a gas mixture of krypton ...

CONTINUOUS ION BEAM KINETIC ENERGY DISSIPATER APPARATUS AND METHOD OF USE THEREOF

The invention comprises a method and apparatus for slowing positively charged particles, comprising the steps of: (1) transporting the positively charged particles from an accelerator, along a beam transport line, and into a nozzle system; (2) placing a first liquid in a first chamber in a beam path of the positively charged particles; (3) placing a second liquid in a second chamber in the beam path of the positively charged particles; (4) moving the first and second chamber with the nozzle system; (5) slowing the positively charged particles using the first liquid and the second liquid; (6) moving the first chamber in a first direction to yield a longer first pathlength of the positively charged particles through the first chamber; and (7) moving the second chamber opposite the first direction to yield a longer second pathlength of the positively charged particles through the second chamber. 1. An apparatus for reducing positively charged particles , comprising:an accelerator configured to deliver the positively charged particles along a beam transport line into a nozzle system, said nozzle system comprising:a first chamber configured to hold a first liquid in a beam path of the positively charged particles;a second chamber configured to hold a second liquid in the beam path of the positively charged particles; anda computer controlled motor configured to move said first chamber and said second chamber with said nozzle system,wherein the first liquid and the second liquid reduce the kinetic energy of the positively charged particles during use.2. The apparatus of claim 1 , further comprising:a first beam path, comprising a first pathlength, from a beam entrance side of said first chamber to a beam exit side of said first chamber; anda second beam path, comprising a second pathlength, from an incident side of said second chamber to an egress side of said second chamber.3. The apparatus of claim 2 , further comprising:a common fluid reserve tank connected with a ...

METHODS FOR INCREASING BEAM CURRENT IN ION IMPLANTATION

The present invention relates to an improved method for increasing a beam current as part of an ion implantation process. The method comprises introducing a dopant source and an assistant species into an ion implanter. A plasma of ions is formed and then extracted from the ion implanter. Non-carbon target ionic species are separated to produce a beam current that is higher in comparison to that generated solely from the dopant source. 1. A method of increasing a beam current for implanting a non-carbon target ionic species , comprising the steps of:introducing a dopant source into an ion implanter from a delivery container;introducing an assistant species into the ion implanter from the delivery container, said assistant species comprising:(i) a lower ionization energy in comparison to an ionization energy of the dopant source;{'sup': '2', '(ii) a total ionization cross-section (TICS) greater than 2 Å;'}(iii) a ratio of bond dissociation energy (BDE) of a weakest bond of the assistant species to the lower ionization energy of the assistant species to be 0.2 or higher; and(iv) an absence of the non-carbon target ionic species;ionizing the assistant species to produce ions of the assistant species;the dopant source interacting with the assistant species whereby the dopant source undergoes assistant species ion-assisted ionization;forming a plasma containing ions;extracting a beam of the ions from the ion implanter;separating the ions to isolate non-carbon target ionic species;producing the beam current of the non-carbon target ionic species that is higher in comparison to that generated solely from the dopant source; andimplanting the non-carbon target ionic species into a substrate.2. The method of claim 1 , wherein the dopant source is in a concentration higher than that of the assistant species.3. The method of claim 1 , further comprising introducing a diluent gas into the ion implanter.4. The method of claim 1 , further comprising:operating at a predetermined arc ...

INSULATOR FOR AN ION IMPLANTATION SOURCE

An insulator for an ion implantation source may provide electrical insulation between high voltage components and relatively lower voltage components of the ion implantation source. To reduce the likelihood of and/or prevent a leakage path forming along the insulator, the insulator may include an internal cavity having a back and forth pattern. The back and forth pattern of the internal cavity increases the mean free path of gas molecules in the ion implantation source and increases the surface area of the insulator that is not directly or outwardly exposed to the gas molecules. This results in a continuous film or coating being more difficult and/or less likely to form along the insulator, which extends the working time of the ion implantation source. 1. An insulator for an ion implantation source , comprising: a first plurality of guide walls,', 'a first plurality of channels formed by the first plurality of guide walls,', 'a core member; and, 'a first portion, comprising a second plurality of guide walls, and', 'wherein a combination of the first plurality of guide walls, the first plurality of channels, the second plurality of guide walls, and the second plurality of channels form a third channel to the core member when the core member is at least partially inserted into the second portion.', 'a second plurality of channels formed by the second plurality of guide walls,'}], 'a second portion, comprising2. The insulator of claim 1 , wherein the first plurality of guide walls are a first plurality of concentric guide walls;wherein the first plurality of channels are a first plurality of concentric channels;wherein the second plurality of guide walls are a second plurality of concentric guide walls; andwherein the second plurality of channels are a second plurality of concentric channels.3. The insulator of claim 1 , wherein the third channel is formed when at least a subset of the first plurality of guide walls are at least partially inserted into at least a ...

ION GENERATION APPARATUS AND ELECTRIC EQUIPMENT USING THE SAME

In this ion generation apparatus, tip end portions of needle electrodes are aligned in an X direction with being oriented in a Z direction, and protrude from a casing. A protective cover covers the tip end portions of the needle electrodes. The protective cover is provided with holes opened to allow tip ends of the needle electrodes to be seen from the Z direction, and an opening opened to allow the needle electrodes to be seen from a Y direction. Therefore, ions generated at the tip end portions of the needle electrodes can be emitted efficiently out of the casing. Further, a user can be prevented from touching the tip end portion of the needle electrode and injuring his or her finger or the like. 1. An ion generation apparatus generating ions including a plurality of needle electrodes , comprising:a substrate having said plurality of needle electrodes mounted thereon;a casing accommodating said substrate, said plurality of needle electrodes having tip end portions aligned in an X direction with being oriented in a Z direction, and protruding from said casing; anda protective cover covering the tip end portions of said plurality of needle electrodes,said protective cover being provided with a plurality of first holes opened to allow tip ends of said plurality of needle electrodes to be seen from the Z direction, respectively, and a first opening opened to allow said plurality of needle electrodes to be seen from a Y direction.2. The ion generation apparatus according to claim 1 , further comprising a lid member closing said casing so as to cover said substrate claim 1 , whereinsaid lid member is provided with a second hole opened at a position corresponding to each needle electrode, a top plate provided to face said lid member and having said plurality of first holes opened therein, and', 'support members provided between said top plate and said lid member and having said first opening opened therein, and, 'said protective cover includes'}the tip end portion of ...

CHARGED PARTICLE INSTRUMENTS

An apparatus is disclosed for use in a charged particle instrument which defines an inner volume therein. The apparatus comprises an adaptor () having a first portion adapted for attachment to a part () of a gas injection system () of a charged particle instrument which is located within an inner volume of such an instrument; and a second portion arranged to receive a tool () adapted for interaction with a sample () located in the inner volume of such an instrument. 1. An adaptor for attachment to a nozzle of a gas injection system provided in an inner volume of a charged particle instrument , the adaptor having a first portion adapted for releasable attachment to a nozzle of a gas injection system of a charged particle instrument , which part nozzle is located within an inner volume of such an instrument , and is operable to provide a gas injection function for the charge particle instrument concerned; and a second portion adapted to receive a tool adapted for interaction with a sample located in the inner volume of such an instrument , wherein the adaptor provides the tool within the inner volume in addition to the nozzle of such a gas injection system without the provision of further additional apparatus within the inner volume.2. A sample interaction apparatus for a charged particle instrument which defines an inner volume therein , the apparatus comprising: an adaptor having a first portion adapted for releasable attachment to a nozzle of a gas injection system of a charged particle instrument , which nozzle is located within an inner volume of such an instrument , and is operable to provide a gas injection function for the charge particle instrument concerned; and a tool attached to a second portion of the adaptor , the tool being adapted for interaction with a sample located in the inner volume of such an instrument , wherein the adaptor provides the tool within the inner volume in addition to the nozzle of such a gas injection system without the provision of ...

METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT

An apparatus for separating ions having different mass or charge includes a waveguide conduit coupled to a microwave source for transmitting microwaves through openings in the waveguide conduit. The outlet ends of pipes are positioned at the openings for transporting material from a material source to the openings. A plasma chamber is in communication with the waveguide tube through the openings. The plasma chamber receives through the openings microwaves from the waveguide tube and material from the pipes. The plasma chamber includes magnets disposed in an outer wall thereof for forming a magnetic field in the plasma chamber. The plasma chamber includes a charged cover at a side of the chamber opposite the side containing the openings. The cover includes extraction holes through which ion beams from the plasma chamber are extracted. Deflectors coupled to one of the extraction holes receive the ion beams extracted from the plasma chamber. Each deflector bends an ion beam and provides separate passages for capturing ions following different trajectories from the bending of the ion beam based on their respective mass or charge. 1. An apparatus for separating ions having different mass or charge , comprising:a waveguide conduit having a plurality of openings therein, said waveguide conduit being coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of openings;one or more pipes having an outlet end positioned at each of the plurality of openings for transporting material from a material source to the plurality of openings;a plasma chamber in communication with the waveguide tube through the plurality of openings, said plasma chamber receiving through said plurality of openings microwaves from the waveguide tube and material from the one or more pipes, said plasma chamber including a plurality of magnets disposed in an outer wall of the plasma chamber for forming a magnetic field in the plasma chamber, said plasma ...

Dynamic Electron Impact Ion Source

An ion source can include a magnetic field generator configured to generate a magnetic field in a direction parallel to a direction of the electron beam and coincident with the electron beam. However, this magnetic field can also influence the path of ionized sample constituents as they pass through and exit the ion source. An ion source can include an electric field generator to compensate for this effect. As an example, the electric field generator can be configured to generate an electric field within the ion source chamber, such that an additional force is imparted on the ionized sample constituents, opposite in direction and substantially equal in magnitude to the force imparted on the ionized sample constituents by the magnetic field. 1. A system comprising: a first input port;', 'a second input port different from the first input port;', 'an exit port;', 'a magnetic field generator configured to generate a magnetic field within the ion source chamber;', 'a first electric field generator configured to generate a first electric field within the ion source chamber;', 'a second electric field generator configured to generate a second electric field within the ion source chamber;, 'an ion source chamber comprising receive gas-phase neutral species through the first input port;', 'receive a flow of electrons through the second input port;', 'guide the electrons through the ion source chamber using the magnetic field generator;', 'generate ions in an ionization region within the ion source chamber through an interaction between the gas-phase neutral species and the electrons; and', 'focus and accelerate at least some of the ions from the ion source chamber through the exit port along an ion beam axis using the first electric field generator;', 'wherein the second electric field generator is configured to reduce or eliminate an influence of the magnetic field on at least some of the ions accelerated from the ion source., 'wherein the ion source chamber is configured, ...

ION IMPLANTATION SYSTEM WITH MIXTURE OF ARC CHAMBER MATERIALS

A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance. 1. An ion implantation system for implanting one or more ionic species into a substrate , the system comprising:a gas source comprising an ionizable gas or gas mixture containing at least one ionizable gas; andan arc chamber comprising at least a first arc chamber material and a second arc chamber material, wherein the first and second arc chamber materials are different,wherein the arc chamber comprises arc chamber walls having interior-plasma facing surfaces and at least one of one or more arc chamber liners, a sputtering target disposed in the arc chamber, or a combination thereof, wherein the first and second arc chamber materials are present in the arc chamber walls, in the one or more arc chamber liners disposed in the arc chamber, a target disposed in the arc chamber, or a combination thereof.2. The system of claim 1 , wherein the arc chamber walls comprise the first arc chamber material claim 1 , the first arc chamber material comprising tungsten claim 1 , and wherein the second arc chamber material includes any one of boron claim 1 , boron nitride claim 1 , boron oxide claim 1 , tungsten boride claim 1 , or boron carbide.3. The system of claim 2 , wherein the second arc chamber material is coated onto or surface graded into claim 2 , a ...

Ion generator and ion implanter

There is provided an ion generator including a vapor generating chamber for generating a vapor by heating a raw material in which a first solid material which is a single substance of an impurity element and a second solid material which is a compound containing the impurity element are mixed with each other, and a plasma generating chamber for generating a plasma containing ions of the impurity element by using the vapor.

APPARATUS AND TECHNIQUES TO TREAT SUBSTRATES USING DIRECTIONAL PLASMA AND POINT OF USE CHEMISTRY

In one embodiment, an apparatus to treat a substrate may include an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate. The plasma beam may comprise ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; and a gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber. 1. An apparatus to treat a substrate , comprising:an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate, the plasma beam comprising ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; anda gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber.2. The apparatus of claim 1 , wherein the gas outlet system is arranged to deliver the reactive gas to the substrate alongside the plasma beam.3. The apparatus of claim 1 , wherein the extraction plate comprises an extraction aperture having an aperture width along a first direction and an aperture length along a second direction perpendicular to the first direction claim 1 , wherein the aperture width is greater than the aperture length claim 1 , wherein the plasma beam is a ribbon beam claim 1 , and wherein the gas outlet system comprises a plurality of gas orifices claim 1 , wherein the plurality of gas orifices are arranged along a side of the extraction aperture along the first direction.4. The apparatus of claim 1 , wherein the reactive gas comprises a non-dissociated gas.5. The apparatus of claim 1 , wherein the reactive gas comprises methanol claim 1 , ...

Selective Processing Of A Workpiece

Systems and methods for the selective processing of a particular portion of a workpiece are disclosed. For example, the outer portion may be processed by directing an ion beam toward a first position on the workpiece, where the ion beam extends beyond the outer edge of the workpiece at two first locations. The workpiece is then rotated relative to the ion beam about its center so that certain regions of the outer portion are exposed to the ion beam. The workpiece is then moved relative to the ion beam to a second position and rotated in the opposite direction so that all regions of the outer portion are exposed to the ion beam. This process may be repeated a plurality of times. The ion beam may perform any process, such as ion implantation, etching or deposition. 1. A method of processing a workpiece , comprising:rotating the workpiece about a center in a first direction while an ion beam is directed toward a first position, where the ion beam extends beyond an outer edge of the workpiece at two first locations and the first position is a predetermined distance from the outer edge of the workpiece, so as to process a portion of an outer portion of the workpiece;moving the workpiece relative to the ion beam so as to direct the ion beam toward a second position on the workpiece, where the ion beam extends beyond an outer edge of the workpiece at two second locations and the second position is the predetermined distance from the outer edge of the workpiece; androtating the workpiece about the center in a second direction, opposite the first direction, while the ion beam is directed toward the second position, so as to process a remainder of the outer portion of the workpiece.2. The method of claim 1 , wherein the workpiece is rotated at least 180° in the first direction and at least 180° in the second direction.3. The method of claim 1 , wherein the ion beam does not impact the workpiece during the moving.4. The method of claim 3 , wherein the ion beam is blocked by a ...

Inductively-coupled plasma ion source for use with a focused ion beam column with selectable ions

An inductively coupled plasma source having multiple gases in the plasma chamber provides multiple ion species to a focusing column. A mass filter allows for selection of a specific ion species and rapid changing from one species to another.

CLOSED DRIFT MAGNETIC FIELD ION SOURCE APPARATUS CONTAINING SELF-CLEANING ANODE AND A PROCESS FOR SUBSTRATE MODIFICATION THEREWITH

A process for modifying a surface of a substrate is provided that includes supplying electrons to an electrically isolated anode electrode of a closed drift ion source. The anode electrode has an anode electrode charge bias that is positive while other components of the closed drift ion source are electrically grounded or support an electrical float voltage. The electrons encounter a closed drift magnetic field that induces ion formation. Anode contamination is prevented by switching the electrode charge bias to negative in the presence of a gas, a plasma is generated proximal to the anode electrode to clean deposited contaminants from the anode electrode. The electrode charge bias is then returned to positive in the presence of a repeat electron source to induce repeat ion formation to again modify the surface of the substrate. An apparatus for modification of a surface of a substrate by this process is provided. 115-. (canceled)16. An apparatus for deposition of a film onto a surface of a substrate comprising:a first closed drift ion source having an electrically isolated first anode electrode and other components comprising ferromagnetic cathode poles and magnets that form a closed drift magnetic field, said other components being grounded or supporting an electrical float voltage;a power supply for selectively powering said first anode electrode with a charge bias with a positive charge bias duration and a negative charge bias duration; andan electron emitter supplying electrons to said first anode electrode when the first electrode charge bias is positive.17. The apparatus of wherein the closed drift magnetic field passes through at least one of said other components.18. The apparatus of wherein said electron emitter is a second closed drift ion source having a second anode electrode with a second electrode charge bias that is opposite the first electrode charge bias during ion formation and repeat ion formation to support a second closed drift ion source ...

ION SOURCE DEVICE AND METHOD FOR PROVIDING ION SOURCE

Various embodiments provide an ion source device and a method for providing the ion source. An exemplary ion source device can include an arc chamber, a filament, a reflector, a slit outlet, a source gas inlet, and/or a cleaning gas inlet. The filament can be configured to generate thermo-electrons in the arc chamber. The reflector can be configured to reflect the thermo-electrons back to the arc chamber. The slit outlet can be configured to exit a gaseous material out of the arc chamber. The source gas inlet and the cleaning gas inlet can be located on a same sidewall of the arc chamber configured to respectively introduce an ion source gas and an inert cleaning gas into the arc chamber. 1. An ion source device of an ion implanter , comprising:an arc chamber;a filament located on a first sidewall of the arc chamber and configured to generate thermo-electrons in the arc chamber;a reflector located on a second sidewall of the arc chamber opposite to the first sidewall and configured to reflect the thermo-electrons back to the arc chamber;a slit outlet located on a top of the arc chamber and configured to exit a gaseous material out of the arc chamber;a source gas inlet located on a third sidewall of the arc chamber and configured to introduce an ion source gas into the arc chamber, wherein the third sidewall is between the first sidewall and the second sidewall; anda cleaning gas inlet located on the third sidewall of the arc chamber and configured to introduce an inert cleaning gas into the arc chamber.2. The device of claim 1 , wherein the inert cleaning gas includes argon claim 1 , helium claim 1 , or a combination thereof.3. The device of claim 1 , wherein a straight-line distance between the cleaning gas inlet and the filament is greater than a straight-line distance between the source gas inlet and the filament.4. The device of claim 3 , wherein the straight-line distance between the cleaning gas inlet and the source gas inlet ranges from about 40 mm to about ...

Mirror Ion Microscope and Ion Beam Control Method

To provide a device particularly including an imaging-type or a projection-type ion detection system, not a scanning type such as in a scanning ion microscope, and capable of performing observation or inspection at high speed with an ultrahigh resolution in a sample observation device using an ion beam. To further provide a device capable of performing observation after surface cleaning, which has been difficult in an electron beam device, or a device capable of observing structures and defects in a depth direction. The device includes a gas field ion source that generates an ion beam, an irradiation optical system that irradiates a sample with the generated ion beam, a potential controller that controls an accelerating voltage of the ion beam and a positive potential to be applied to the sample and an ion detection unit that images or projects ions reflected from the sample as a microscope image, in which the potential controller includes a storage unit storing a first positive potential allowing the ion beam to collide with the sample and a second positive potential for reflecting the ion beam before allowing the ion beam to collide with the sample. Then, the potential controller includes a sputter controller for removing part of a sample surface by setting the first positive potential and an image acquisition controller for obtaining a microscope image by setting the second positive potential. 1. A mirror ion microscope comprising:a gas field ion source that generates an ion beam;an irradiation optical system that irradiates a sample with the generated ion beam;a potential controller that controls an accelerating voltage of the ion beam and a positive potential to be applied to the sample; andan imaging-type or a projection-type ion detection unit that images or projects ions reflected from the sample as a microscope image,wherein the potential controller includes a storage unit storing a first positive potential allowing the ion beam to collide with the sample ...

METHODS OF ION SOURCE FABRICATION

A method of ion source fabrication for a mass spectrometer includes simultaneously forming aligned component portions of an ion source using direct metal laser fusing of sequential layers. The method can further include forming the component portions on a base plate made from a ceramic material by applying fused powder to the base plate to build the component portions thereon. 1. A method of ion source fabrication for a mass spectrometer , comprising the steps of:additively forming aligned component portions of an ion source.2. The method of claim 1 , wherein the step of forming further includes direct metal laser fusing of sequential layers.3. The method of claim 2 , wherein the step of forming further includes forming the component portions on a base plate made from a ceramic material.4. The method of claim 3 , wherein the step of forming further includes applying fused powder to the base plate to build the component portions thereon.5. The method of claim 4 , wherein the step of forming further includes welding at least one component portion to the base plate.6. The method of claim 4 , wherein the step of forming further includes coupling at least one component portion to the base plate using screws through a surface of the base plate opposite the component portions.710-. (canceled)11. A method of ion source fabrication for a mass spectrometer claim 4 , comprising the steps of:additively forming aligned component portions of an ion source on a base plate made from a ceramic material.12. The method of claim 11 , wherein the step of forming further includes applying fused powder to the base plate to build the component portions thereon.13. The method of claim 12 , wherein the step of forming further includes welding at least one component portion to the base plate.14. The method of claim 12 , wherein the step of forming further includes coupling at least one component portion to the base plate using screws through a surface of the base plate opposite the component ...

MATERIAL RECOVERY SYSTEMS FOR OPTICAL COMPONENTS

A material recovery system for an optical component includes a reservoir containing gas and configured to supply a gas flow containing the gas. The material recovery system also includes an ion beam generator disposed on the reservoir and configured to receive the gas flow and to ionize the gas in the gas flow to generate an ion beam. The ion beam is configured to be directed to the optical component to remove at least a portion of a F-containing optical material degraded by exposure to VUV radiation, DUV radiation, and/or photo-contamination. 1. A material recovery system for an optical component having a fluorine (F)-containing optical material which has been exposed to vacuum ultra-violet (VUV) radiation , deep ultra-violet (DUV) radiation and/or photo-contamination , the material recovery system comprising:a reservoir containing a gas and configured to supply a gas flow containing the gas; andan ion beam generator disposed on the reservoir and configured to receive the gas flow and to ionize the gas in the gas flow to generate an ion beam, the ion beam configured to be directed to the optical component to remove at least a portion of the F-containing optical material degraded by exposure to VUV radiation, DUV radiation, and/or photo-contamination.2. The material recovery system of claim 1 , wherein the F-containing optical material is selected from the group consisting of magnesium fluoride (MgF) claim 1 , lanthanum fluoride (LaF) claim 1 , aluminum fluoride (AlF) claim 1 , barium fluoride (BaF) claim 1 , lithium fluoride (LiF) claim 1 , and a combination thereof.3. The material recovery system of claim 1 , wherein the ion beam has a diameter of 10 μm to 100 mm.4. The material recovery system of claim 1 , wherein the gas in the reservoir is an inert gas.5. The material recovery system of claim 1 , wherein the gas in the reservoir contains fluorine.6. The material recovery system of claim 1 , further comprising an XYZ stage removably coupled to the reservoir and ...

Method Of Improving Ion Beam Quality In an Implant System

A method for improving the ion beam quality in an ion implanter is disclosed. In some ion implantation systems, contaminants from the ion source are extracted with the desired ions, introducing contaminants to the workpiece. These contaminants may be impurities in the ion source chamber. This problem is exacerbated when mass analysis of the extracted ion beam is not performed, and is further exaggerated when the desired feedgas includes a halogen. The introduction of a diluent gas in the ion chamber may reduce the deleterious effects of the halogen on the inner surfaces of the chamber, reducing contaminants in the extracted ion beam. In some embodiments, the diluent gas may be germane or silane. 1. A method of implanting dopant into a workpiece , comprising:introducing a first source gas and a second source gas into a chamber of an ion source, said first source gas comprising molecules comprising a dopant and fluoride, wherein said dopant comprises a Group 3 or Group 5 element, and the second source gas comprises molecules comprising hydrogen and a Group 4 element or molecules comprising hydrogen and a species having an opposite conductivity as the dopant;ionizing the first source gas and the second source gas in the chamber, wherein a coating forms on a dielectric window or on an inner surface of the chamber; andextracting ions from the chamber and accelerating the ions toward the workpiece.2. The method of claim 1 , wherein the second source gas comprises molecules comprising hydrogen and a Group 4 element.3. The method of claim 2 , wherein the Group 4 element comprises silicon or germanium.4. The method of claim 1 , wherein the dopant comprises a Group 3 element claim 1 , and the second source gas comprises molecules containing hydrogen and a Group 5 element.5. The method of claim 4 , wherein the Group 3 element comprises boron.6. The method of claim 5 , wherein the Group 5 element comprises phosphorus or arsenic.7. The method of claim 1 , wherein the dopant ...

High Brightness Ion Beam Extraction

An apparatus for the creation of high current ion beams is disclosed. The apparatus includes an ion source, such as a RF ion source or an indirectly heated cathode (IHC) ion source, having an extraction aperture. Disposed proximate the extraction aperture is a bias electrode, which has a hollow center portion that is aligned with the extraction aperture. A magnetic field is created along the perimeter of the hollow center portion, which serves to contain electrons within a confinement region. Electrons in the confinement region energetically collide with neutral particles, increasing the number of ions that are created near the extraction aperture. The magnetic field may be created using two magnets that are embedded in the bias electrode. Alternatively, a single magnet or magnetic coils may be used to create this magnetic field. 1. An apparatus for creating a high current ion beam , comprising:an ion source having an ion source chamber and an extraction aperture;a bias electrode disposed proximate the extraction aperture, having an inner surface defining a perimeter of a hollow center portion that is aligned with the extraction aperture; anda magnetic field disposed along the perimeter of the hollow center portion, creating a confinement region for electrons proximate the inner surface.2. The apparatus of claim 1 , wherein the magnetic field is created by a magnet that surrounds an outer surface of the bias electrode claim 1 , where a first pole of the magnet is oriented toward the ion source chamber and a second pole of the magnet is oriented toward a chamber wall containing the extraction aperture.3. The apparatus of claim 1 , further comprising a first magnet embedded in the bias electrode and oriented with a north pole disposed toward the hollow center portion claim 1 , and a second magnet embedded in the bias electrode and oriented with a south pole disposed toward the hollow center portion claim 1 , wherein the magnetic field is created between the north pole ...

Negative Ribbon Ion Beams from Pulsed Plasmas

An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an RF ion source, having an extraction aperture. An antenna disposed proximate a dielectric window is energized by a pulsed RF power supply. While the RF power supply is actuated, a plasma containing primarily positive ions and electrons is created. When the RF power supply is deactivated, the plasma transforms into an ion-ion plasma. Negative ions may be extracted from the RF ion source while the RF power supply is deactivated. These negative ions, in the form of a negative ribbon ion beam, may be directed toward a workpiece at a specific incident angle. Further, both a positive ion beam and a negative ion beam may be extracted from the same ion source by pulsing the bias power supply multiple times each period. 1. An apparatus for creating a negative ribbon ion beam , comprising:an ion source having a plurality of chamber walls defining an ion source chamber and having an extraction aperture;an RF antenna disposed proximate one of the plurality of chamber walls of the ion source chamber;an RF power supply in communication with the RF antenna, and outputting a first RF power level for a first time duration to the RF antenna to create a plasma within the ion source chamber from a feed gas and outputting a second RF power level, lower than the first RF power level, for a second time duration; anda bias power supply to create a voltage difference between a plasma disposed in the ion source chamber and a workpiece, such that the bias power supply is pulsed to create the voltage difference during at least a portion of the second time duration, so as to extract the negative ribbon ion beam from the ion source chamber through the extraction aperture.2. The apparatus of claim 1 , wherein at least one of the plurality of chamber walls is electrically conductive and the bias power supply is in communication with electrically conductive chamber walls of the ion source chamber ...

CHARGED PARTICLE BEAM SPECIMEN INSPECTION SYSTEM AND METHOD FOR OPERATION THEREOF

A charged particle beam specimen inspection system is described. The system includes an emitter for emitting at least one charged particle beam, a specimen support table configured for supporting the specimen, an objective lens for focusing the at least one charged particle beam, a charge control electrode provided between the objective lens and the specimen support table, wherein the charge control electrode has at least one aperture opening for the at least one charged particle beam, and a flood gun configured to emit further charged particles for charging of the specimen, wherein the charge control electrode has a flood gun aperture opening. 1. A charged particle beam specimen inspection system , comprising:an emitter for emitting at least one charged particle beam;a specimen support table configured for supporting a specimen;an objective lens for focusing the at least one charged particle beam;a charge control electrode provided between the objective lens and the specimen support table, wherein the charge control electrode has at least one aperture opening for the at least one charged particle beam; anda flood gun configured to emit further charged particles for charging of the specimen, wherein the charge control electrode has a flood gun aperture opening.2. The charged particle beam specimen inspection system according to claim 1 , wherein the charge control electrode is connected to a first power supply such that the charge control electrode is configured to provide a charge control for a first operation of the flood gun and to provide a charge control for a second operation of the emitter claim 1 , both with the first power supply.3. The charged particle beam specimen inspection system according to claim 1 , further comprising:an objective lens housing surrounding the objective lens and shielding at least one of magnetic fields and electrostatic fields generated near the objective lens, wherein the objective lens housing surrounds at least a portion of the ...

CHARGED PARTICLE BEAM APPARATUS

A charged particle beam apparatus includes a charged particle source, a separator, a charged particle beam irradiation switch, and a control device. The separator is inserted into a charged particle optical system and deflects a traveling direction of a charged particle beam out of an optical axis of the charged particle optical system or deflects the traveling direction in the optical axis of the charged particle optical system. The charged particle beam irradiation switch absorbs the charged particle beam deflected out of the optical axis of the charged particle optical system or reflects the charged particle beam toward the separator. The control device controls a charged particle beam irradiation switch. 1. A charged particle beam apparatus , comprising:a charged particle source;a stage on which a sample is placed;a charged particle optical system configured to irradiate the sample with a charged particle beam generated in the charged particle source;a separator which is inserted in the charged particle optical system and deflects a traveling direction of the charged particle beam out of an optical axis of the charged particle optical system or deflects the traveling direction in the optical axis of the charged particle optical system;a charged particle beam irradiation switch configured to absorb the charged particle beam deflected out of the optical axis of the charged particle optical system or reflect the charged particle beam toward the separator, anda control device configured to control the charged particle beam irradiation switch.2. The charged particle beam apparatus according to claim 1 ,wherein, the charged particle beam irradiation switch has a charged particle beam reflection control electrode, and{'sub': 0', 'on', '0', 'off', '0, 'when a voltage such that velocity energy of the charged particle beam traveling in a direction of the charged particle beam reflection control electrode becomes zero is denoted by |V|, the control device controls ...

ALTERNATE MATERIALS AND MIXTURES TO MINIMIZE PHOSPHORUS BUILDUP IN IMPLANT APPLICATIONS

Systems and processes for utilizing phosphorus fluoride in place of or in combination with, phosphine as a phosphorus dopant source composition, to reduce buildup of unwanted phosphorus deposits in ion implanter systems. The phosphorus fluoride may comprise PF3 and/or PF5. Phosphorus fluoride and phosphine may be co-flowed to the ion implanter, or each of such phosphorus dopant source materials can be alternatingly and sequentially flowed separately to the ion implanter, to achieve reduction in unwanted buildup of phosphorus solids in the implanter, relative to a corresponding process system utilizing only phosphine as the phosphorus dopant source material. 130.-. (canceled)31. An ion implantation method , comprising generating phosphorus dopant species , and implanting the phosphorus dopant species in a substrate , wherein the method comprises one of:(i) generating the phosphorus dopant species during a first period of said implanting from a first phosphorus dopant composition, and during a second period of said implanting from a second phosphorus dopant composition, wherein the first and second phosphorus dopant compositions are different from one another; and(ii) generating the phosphorus dopant species from a phosphorus dopant source mixture comprising different phosphorus fluorides.32. The method of claim 31 , wherein the method comprises generating the phosphorus dopant species during a first period of said implanting from a first phosphorus dopant composition claim 31 , and during a second period of said implanting from a second phosphorus dopant composition claim 31 , wherein the first and second phosphorus dopant compositions are different from one another.33. The method of claim 32 , wherein the first phosphorus dopant composition comprises phosphine claim 32 , and the second phosphorus dopant composition comprises PF.34. The method of claim 32 , wherein the first phosphorus dopant composition comprises phosphine claim 32 , and the second phosphorus dopant ...

SELF-SUSTAINED NON-AMBIPOLAR DIRECT CURRENT (DC) PLASMA AT LOW POWER

A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. The voltage potential gradient between the electron beam source chamber and the ion beam source chamber generates an energy field that is sufficient to maintain the electron beam and ion beam as a plasma treats the substrate so that radio frequency (RF) power initially applied to the processing system to generate the electron beam can be terminated thus improving the power efficiency of the processing system. 1. A processing system for self-sustained non-ambipolar plasma treatment of a substrate , comprising: 'excite an electron beam source plasma to generate an electron beam that excites an electron beam excited plasma;', 'an electron beam source chamber configured to 'house the electron beam excited plasma to generate an ion beam to maintain the electron beam, wherein one or both of the electron beam source chamber and the ion beam source chamber is configured to house the substrate to be treated by one or both of the electron beam source plasma and the electron beam excited plasma;', 'an ion beam source chamber configured to inject the electron beam from the electron beam source plasma and propel the electron beam into the ion beam source chamber, wherein the electron beam excited plasma includes an equal number of electrons and ions in the ion beam source chamber, and', 'inject the ion beam from the electron beam excited plasma and propel the ion beam into the electron beam source chamber, wherein the electron beam source plasma includes an equal number of electrons and ions in ...

Gas Field Ionization Ion Source and Ion Beam Apparatus

In the case of a conventional gas field ionization ion source, it was not possible to carry out an analysis with a high S/N ratio and a high-speed machining process because the current amount of an ion beam is small. In view of these problems, the present invention has been devised, and its object is to obtain a large ion beam current, while suppressing a probability of damaging an emitter electrode. The present invention is characterized by a process in which an ion beam is emitted at least in two operation states including a first operation state in which, when a first extraction voltage is applied, with the gas pressure being set to a first gas pressure, ions are emitted from a first ion emission region at the apex of the emitter electrode, and a second operation state in which, when a second extraction voltage that is higher than the first extraction voltage is applied, with the gas pressure being set to a second gas pressure that is higher than the first gas pressure, ions are emitted from a second ion emission region that is larger than the first ion emission region. 115-. (canceled)16. An ion beam apparatus comprising:a gas field ionization ion source for generating an ion beam;a sample stage for holding a sample;a lens system that focuses the ion beam emitted from the gas field ionization ion source so as to be irradiated onto the sample;a deflection system that deflects the ions so as to change the irradiation position of the ion beam on the sample;a secondary particle detector for detecting secondary particles emitted from the sample;an image processing unit for forming an observation image of the sample by using the detection results of the secondary particle detector; anda control unit for controlling the lens system and the deflection system so as to adjust the irradiation position of the ion beam,wherein the gas field ionization ion source comprises:an emitter electrode having a needle-shaped apex provided with a micro-protrusion having a single atom ...

APPARATUS AND SYSTEM HAVING EXTRACTION ASSEMBLY FOR WIDE ANGLE ION BEAM

An ion beam processing apparatus may include a plasma chamber, and a plasma plate, disposed alongside the plasma chamber, where the plasma plate defines a first extraction aperture. The apparatus may include a beam blocker, disposed within the plasma chamber and facing the extraction aperture. The apparatus may further include a non-planar electrode, disposed adjacent the beam blocker and outside of the plasma chamber; and an extraction plate, disposed outside the plasma plate, and defining a second extraction aperture, aligned with the first extraction aperture. 1. An ion beam processing apparatus comprising:a plasma chamber;a plasma plate, disposed alongside the plasma chamber, the plasma plate defining a first extraction aperture;a beam blocker, disposed within the plasma chamber and facing the extraction aperture;a non-planar electrode, disposed adjacent the beam blocker and outside of the plasma chamber; andan extraction plate, disposed outside the plasma plate, and defining a second extraction aperture, aligned with the first extraction aperture.2. The ion beam processing apparatus of claim 1 , wherein the plasma plate comprises an electrical insulator body claim 1 , and the beam blocker comprises an electrical insulator body.3. The ion beam processing apparatus of claim 1 , wherein the non-planar electrode comprises a first dielectric coating claim 1 , surrounding an electrically conductive inner electrode claim 1 , and wherein the extraction plate comprises a second dielectric coating claim 1 , disposed on an electrically conductive inner plate portion.4. The ion beam processing apparatus of claim 1 , wherein the non-planar electrode comprises a triangular shape in cross-section along a first direction claim 1 , the first direction being perpendicular to a plane of the plasma plate.5. The ion beam processing apparatus of claim 1 , wherein the extraction plate is movable with respect to the plasma plate claim 1 , along a first direction claim 1 , the first ...

GCIB NOZZLE ASSEMBLY

A nozzle assembly used for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the nozzle assembly includes two or more conical nozzles that are aligned such that they are both used to generate the same GCIB. The first conical nozzle may include the throat that initially forms the GCIB and the second nozzle may form a larger conical cavity that may be appended to the first conical nozzle. A transition region may be disposed between the two conical nozzles that may substantially cylindrical and slightly larger than the largest diameter of the first conical nozzle. 1. A nozzle assembly for use in a gas cluster beam (GCB) processing system , comprising:a gas supply manifold having at least one gas supply conduit;a first nozzle component through which a first portion of at least one conical nozzle is formed that extends from a nozzle throat at a first entry surface to an intermediate exit at a first exit surface;a second nozzle component through which a second portion of said at least one conical nozzle extends from an intermediate inlet at a second entry surface to a nozzle exit at a second exit surface, said second nozzle component further including a re-entrant cavity into which said first nozzle component inserts such that said first exit surface mates with said second entry surface, and said first nozzle portion aligns with said second nozzle portion to form said conical nozzle; anda sealing member disposed between said first nozzle component and said gas supply manifold such that when said second nozzle component is attached to said gas supply manifold, said first entry surface of said first nozzle component presses against said sealing member and creates a seal with said gas supply manifold surrounding an outlet of said at least one gas supply conduit.2. The assembly of claim 1 , wherein said first nozzle component is a monolithic piece composed of ceramic.3. The assembly of claim 1 , wherein said second nozzle ...

Orthogonal double dipole cancer therapy treatment beam scanning apparatus and method of use thereof

The invention comprises a method and apparatus for scanning charged particles in a cancer therapy system, comprising the steps of: (1) providing a first and second dipole magnet system and a gap, the gap comprising a common gap length, along a path of the charged particles, within both the first and second dipole magnet systems, the gap comprising a progressively increasing x/y-plane cross-section area from an entrance area of the charged particles into the double dipole magnet system to an exit area of the double dipole magnet system, the x/y-plane perpendicular to a z-axis from a center of the entrance area to a center of the exit area; (2) scanning the positively charged particles along a first axis of the x/y-plane using the first dipole magnet system; and (3) scanning the positively charged particles along a second axis of the x/y-plane using the second dipole magnet system.

Enriched silicon precursor compositions and apparatus and processes for utilizing same

Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above natural abundance in at least one of 28 Si, 29 Si, and 30 Si, and may include a supplemental gas including at least one of a co-species gas and a diluent gas. Dopant gas supply apparatus for providing such silicon dopant compositions to an ion implanter are described, as well as ion implantation systems including such dopant gas supply apparatus.

ION BEAM TREATMENT PROCESS FOR PRODUCING A SCRATCH-RESISTANT HIGH- TRANSMITTANCE ANTIREFLECTIVE SAPPHIRE

Process for treatment of a sapphire part with a beam of a mixture of mono- and multicharged ions of a gas which are produced by an electron cyclotron resonance (ECR) source, where: 1. A process for antireflective treatment in the visible region of a material made of sapphire , comprising:bombarding the material with a beam of a mixture of mono- and multicharged ions of a gas which are produced by an electron cyclotron resonance (ECR) source, where:an acceleration voltage is within a range of between 10 and 100 kV;{'sup': 2', '16', '17', '2, 'an implanted dose of ions, expressed in ions/cm, is within a range of between 10and 3×10ions/cm;'}{'sub': 'D', 'a rate of displacement V, expressed in cm/s, is within a range of between 0.1 cm/s and 5 cm/s.'}2. The process according to claim 1 , characterized in that the mixture of mono- and multicharged ions are ions of the elements selected from the group consisting of helium (He) claim 1 , neon (Ne) claim 1 , argon (Ar) claim 1 , krypton (Kr) claim 1 , and xenon (Xe).3. The process according to claim 1 , characterized in that the mixture mono- and multicharged ions are ions of gases selected from the group consisting of nitrogen (N) and oxygen (O).4. The process according to claim 1 , characterized in that the implanted dose claim 1 , expressed in ions/cm claim 1 , is between (5×10)×(M/14)and 10×(M/14) claim 1 , where M is the atomic mass of the ion.5. The process according to claim 1 , characterized in that the rate of displacement V claim 1 , expressed in cm/s claim 1 , is between 0.025×(P/D) and 0.1×(P/D) claim 1 , where P is the power of the beam claim 1 , expressed in W (watts) claim 1 , and D is the diameter of the beam claim 1 , expressed in cm (centimeters).6. The process according to claim 1 , characterized in that a displacement amplitude A of the beam claim 1 , expressed in cm claim 1 , is chosen so that (P/A)>0.04 W/cm claim 1 , where P is the power of the beam claim 1 , expressed in W (watts).7. The process ...

Systems And Methods For Workpiece Processing Using Neutral Atom Beams

Plasma processing systems and methods are provided. In one example, a system includes a processing chamber having a workpiece support. The workpiece is configured to support a workpiece. The system includes a plasma source configured to induce a plasma from a process gas in a plasma chamber to generate one or more species of negative ions. The system includes a grid structure configured to accelerate the one or more negative ions towards the workpiece. The grid structure can include a first grid plate, a second grid plate, and one or more magnetic elements positioned between the first grid plate and second grid plate to reduce electrons accelerated through the first grid plate. The system can include a neutralizer cell disposed downstream of the grid structure configured to detach extra electrons from ions of the one or more species of negative ions to generate energetic neutral species for processing the workpiece.

ION IMPLANTER AND ION SELECTION METHOD

An ion implanter according to an embodiment of the present disclosure includes: an ion source that includes a plurality of kinds of ions; an extraction electrode that extracts the plurality of kinds of ions from the ion source and generates an ion beam; an ion beam transport tube that transports the ion beam to an object to be irradiated with the ion beam; and an interaction section that is disposed inside the ion beam transport tube, extends substantially parallel to an extending direction of the ion beam transport tube, and is fixed at a predetermined electric potential. 1. An ion implanter comprising:an ion source that includes a plurality of kinds of ions;an extraction electrode that extracts the plurality of kinds of ions from the ion source and generates an ion beam;an ion beam transport tube that transports the ion beam to an object to be irradiated with the ion beam; andan interaction section that is disposed inside the ion beam transport tube, extends substantially parallel to an extending direction of the ion beam transport tube, and is fixed at a predetermined electric potential.2. The ion implanter according to claim 1 , wherein the interaction section changes a trajectory of the ion beam by an interaction between: image charges in the interaction section with respect to the plurality of kinds of ions; and the plurality of kinds of ions.3. The ion implanter according to claim 1 , whereinthe ion beam includes a first ion having a first mass m1 and a first charge number q1, and a second ion having a second mass m2 and a second charge number q2, and{'sup': 2', '2, 'the interaction section causes a first trajectory of the first ion and a second trajectory of the second ion to differ from each other in accordance with a difference between m1/(q1)and m2/(q2).'}4. The ion implanter according to claim 3 , further comprisinga slit that causes the first ion to pass through and shields the second ion.5. The ion implanter according to claim 1 , wherein the ...

POSITIVE AND NEGATIVE ION SOURCE BASED ON RADIO-FREQUENCY INDUCTIVELY COUPLED DISCHARGE

The present invention discloses a positive and negative ion source based on radio-frequency inductively coupled discharge, comprising a tube, a middle portion of which is communicated with an intake pipe; discharge coils electrically connected to a matched network and a radio-frequency power supply successively are wound on the tube; one end of the tube is connected to a first cover plate in a sealed manner, and the first cover plate is connected with a positive ion extraction gate via an insulating medium; the positive ion extraction gate is electrically connected to a negative pole of a DC power supply; the other end of the tube is connected to a second cover plate in a sealed manner, the second cover plate is connected to a third cover plate in a sealed manner via a sidewall, and the third cover plate is connected with a negative ion extraction gate via an insulating medium; and the negative ion extraction gate is electrically connected to a positive pole of the DC power supply. In the present invention, the positive ions and the electrons and negative ions can be extracted simultaneously, and the problems of contamination of the ion source by particles sputtered from the backplane and overheating of the backplane are thus solved. 1. A positive and negative ion source based on radio-frequency inductively coupled discharge , comprising a tube , a middle portion of which is communicated with an intake pipe; and discharge coils electrically connected to a matched network and a radio-frequency power supply successively are wound on the tube;one end of the tube is connected to a first cover plate in a sealed manner, and the first cover plate is connected with a positive ion extraction gate via an insulating medium; and the positive ion extraction gate is electrically connected to a negative pole of a DC power supply; andthe other end of the tube is connected to a second cover plate in a sealed manner, the second cover plate is connected to a third cover plate in a ...

FIELD IONIZATION SOURCE, ION BEAM APPARATUS, AND BEAM IRRADIATION METHOD

An H ion is used as an ion beam to achieve improvement in focusing capability influencing observed resolution and machining width, improvement in the beam stability, and a reduction in damage to the sample surface during the beam irradiation, in the process of observation and machining of the sample surface by the ion beam. The H ion can be obtained by use of a probe current within a voltage range around a second peak occurring when an extracted voltage is applied to a needle-shaped emitter tip with an apex terminated by three atoms or less, in an atmosphere of hydrogen gas. 1. An ion beam apparatus , comprising:{'sub': '3', 'sup': '+', 'a gas field ionization source that emits an ion beam containing a H ion;'}a beam irradiation column that includes a lens capable of focusing an ion emitted from the gas field ionization source, and a deflector capable of deflecting an ion beam;a sample stage on which a sample to be irradiated with an ion beam passing through the beam irradiation column is loaded; anda sample chamber that houses at least the sample stage,{'sub': '3', 'sup': '+', 'wherein an abundance ratio of the H ion is the highest in ion species emitted from an emitter tip of the gas field ionization source.'}2. The ion beam apparatus according to claim 1 ,{'sub': '3', 'sup': '+', 'further comprising a filter that allows an emitted H ion to penetrate based on ion mass in a selective manner.'}3. The ion beam apparatus according to claim 2 ,{'sub': '3', 'sup': '+', 'wherein the filter has a function of allowing only a H ion to penetrate in a selective manner.'}4. The ion beam apparatus according to claim 2 ,wherein the filter has a function of producing a magnetic field.5. The ion beam apparatus according to claim 1 ,further comprising a function of correcting a mask or mold for nanoimprint lithography by the ion beam.6. An ion beam apparatus claim 1 , comprising:a gas field ionization source;a beam irradiation column that is equipped with a lens capable of focusing ...

APPARATUS AND TECHNIQUES FOR DECELERATED ION BEAM WITH NO ENERGY CONTAMINATION

An ion implantation system may include an ion source to generate an ion beam, a substrate stage disposed downstream of the ion source; and a deceleration stage including a component to deflect the ion beam, where the deceleration stage is disposed between the ion source and substrate stage. The ion implantation system may further include a hydrogen source to provide hydrogen gas to the deceleration stage, wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage. 1. An ion implantation system , comprising:an ion source to generate an ion beam;a substrate stage disposed downstream of the ion source;a deceleration stage including a component to deflect the ion beam, the deceleration stage disposed between the ion source and substrate stage; anda gas source, the gas source to provide hydrogen gas or helium gas to the deceleration stage,wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.2. The ion implantation system of claim 1 , wherein the deceleration stage comprises a curved shape claim 1 , wherein the deceleration stage does not provide a line of sight path for the ion beam from an entrance to an exit of the deceleration stage.3. The ion implantation system of claim 1 , comprising a port to transport the hydrogen gas or the helium gas directly into the deceleration stage.4. The ion implantation of claim 1 , the deceleration stage comprising a partial pressure of hydrogen or helium of at least 5×10Torr.5. The ion implantation system of claim 1 , the gas source comprising a plurality of ports to provide hydrogen gas or helium gas to the ion beam claim 1 , wherein at least one port of the plurality of ports is disposed in the deceleration stage.6. The ion implantation system of claim 1 , the gas source comprising a local hydrogen generator.7. The ion implantation system of claim 6 , the gas source comprising an electrolytic hydrogen generator.8. The ion implantation system of claim 1 , ...

METHOD OF ENHANCING THE ENERGY AND BEAM CURRENT ON RF BASED IMPLANTER

Methods and a system of an ion implantation system are configured for increasing beam current above a maximum kinetic energy of a first charge state from an ion source without changing the charge state at the ion source. Ions having a first charge state are provided from an ion source and are selected into a first RF accelerator and accelerated in to a first energy. The ions are stripped to convert them to ions having various charge states. A charge selector receives the ions of various charge states and selects a final charge state at the first energy. A second RF accelerator accelerates the ions to final energy spectrum. A final energy filter filters the ions to provide the ions at a final charge state at a final energy to a workpiece. 1. A high energy ion implantation system , comprising:an ion beam source configured to generate an ion beam comprising a plurality of ions along a beamline;a mass analyzer configured to mass analyze the ion beam;a first RF accelerator configured to receive the ion beam from the mass analyzer, wherein the plurality of ions are at an initial energy and an initial charge state, wherein the first RF accelerator is further configured to accelerate the plurality of ions to a first energy at the initial charge state;an electron stripper positioned downstream of the first RF accelerator and configured to receive the plurality of ions at the initial charge state and first energy and to convert the plurality of ions to a plurality of charge states at the first energy;a charge selector positioned downstream of the electron stripper and configured to select a final charge state at the first energy from the plurality of charge states of the plurality of ions;a second RF accelerator positioned downstream of the charge selector and configured to accelerate the plurality of ions to a final energy spectrum at the final charge state; anda final energy filter positioned downstream of the second RF accelerator and configured to purify the plurality of ...

METHODS AND APPARATUS FOR ION SOURCES, ION CONTROL AND ION MEASUREMENT FOR MACROMOLECULES

Disclosed are methods, apparatus, systems, processes and other inventions relating to: ion sources with controlled electro-pneumatic superposition, ion source synchronized to RF multipole, ion source with charge injection, optimized control in active feedback system, radiation supported charge-injection liquid spray, ion source with controlled liquid injection as well as various embodiments and combinations of each of the foregoing. 1. (canceled)2. A method of generating ions from sample molecules for analysis comprising:positioning proposed sample molecules in communication with a sample carrying substance, said substance positioned in at least partially electrically conductive relationship with an electric potential, subjecting at least a portion of said sample molecules to a low molecular weight ion beam suitable to generate ions from at least some of said sample molecules.3. The method of claim 1 , wherein said generated ions stem from sample molecules comprising biological macromolecules.4. The method of claim 1 , wherein said subjecting step comprises subjecting at least a portion of said sample molecules to a low molecular weight ion beam suitable to generate ions from at least some of said sample molecules whereby ions for analysis are generated from said sample molecules.5. A device for generating ions from sample molecules claim 1 , the device comprising:a plurality of sample molecules disposed in communication with a body having an at least partially electrically conductive relationship with an electric potential, anda source of low molecular ions disposed in position to expose at least a portion of said plurality of sample molecules to a low molecular weight ion beam of suitable energy to generate ions from said portion.6. The device of claim 4 , further comprising claim 4 ,at least one ion optical element for scanning said low molecular weight ion beam across at least said portion of said plurality of sample molecules.7. The device of claim 4 , wherein ...

APPARATUS AND METHOD FOR GENERATING HIGH CURRENT NEGATIVE HYDROGEN ION BEAM

An apparatus to generate negative hydrogen ions. The apparatus may include an ion source chamber having a gas inlet to receive Hgas; a light source directing radiation into the ion source chamber to generate excited Hmolecules having an excited vibrational state from at least some of the Hgas; a low energy electron source directing low energy electrons into the ion source chamber, wherein H ions are generated from at least some of the excited Hmolecules; and an extraction assembly arranged to extract the H ions from the ion source chamber. 1. An apparatus to generate negative hydrogen ions , comprising:{'sub': '2', 'an ion source chamber having a gas inlet to receive Hgas;'}{'sub': 2', '2, 'a light source directing radiation into the ion source chamber to generate excited Hmolecules having an excited vibrational state from at least some of the Hgas;'}{'sup': '−', 'sub': '2', 'a low energy electron source directing low energy electrons into the ion source chamber, wherein H ions are generated from at least some of the excited Hmolecules; and'}{'sup': '−', 'an extraction assembly arranged to extract the H ions from the ion source chamber, wherein the light source is embedded at least partially in a wall of the ion source chamber, or is disposed within the ion source chamber.'}2. The apparatus of claim 1 , the light source extending along a first side of the ion source chamber and along a second side of the ion source chamber.3. The apparatus of claim 1 , the low energy electron source extending along a third side of the ion source chamber and along a fourth side of the ion source chamber.4. The apparatus of claim 1 , the light source generating radiation having an energy of at least 1.5 eV.5. The apparatus of claim 1 , the light source comprising radiation having a photon energy of 1.5 eV to 5.0 eV.6. The apparatus of claim 1 , the light source comprising a light-emitting diode claim 1 , a laser claim 1 , or a broad spectrum light source generating photons having ...

Ion Source Thermal Gas Bushing

A system for reducing clogging and deposition of feed gas on a gas tube entering an ion source chamber is disclosed. To lower the overall temperature of the gas tube, a gas bushing, made of a thermally isolating material, is disposed between the ion source chamber and the gas tube. The gas bushing is made of a thermally isolating material, such as titanium, quartz, boron nitride, zirconia or ceramic. The gas bushing has an inner channel in fluid communication with the ion source chamber and the gas tube to allow the flow of feed gas to the ion source chamber. The gas bushing may have a shape that is symmetrical, allowing it to be flipped to extend its useful life. In some embodiments, the gas tube may be in communication with a heat sink to maintain its temperature. 1. A system for delivering feed gas to an ion source , comprising:a gas tube, having an inner channel in fluid communication with a dopant source; anda gas bushing, having an inner channel in fluid communication with the inner channel of the gas tube and an ion source chamber, wherein the gas bushing has a thermal conductivity of less than 30 W/m K.2. The system of claim 1 , wherein the gas tube is linear.3. The system of claim 2 , further comprising an elbow joint disposed between the gas tube and the gas bushing claim 2 , the elbow joint having an inner channel in fluid communication with the inner channel of the gas tube and the inner channel of the gas bushing.4. The system of claim 3 , wherein the gas bushing has an inner surface in communication with the ion source chamber and an outer surface forming an interface with the elbow joint claim 3 , and wherein a shape of the gas bushing is symmetrical such that the gas bushing can be flipped claim 3 , wherein when flipped claim 3 , the inner surface becomes the outer surface.5. The system of claim 3 , wherein the gas bushing and the elbow joint have interlocking features to allow attachment of the gas bushing to the elbow joint.6. The system of claim 2 ...

Metal Plating of Grids for Ion Beam Sputtering

Provided herein are deposition systems utilizing coated grids in an ion deposition process which provide more predictable erosion of the coating rather than erosion of the grid itself. Further, coatings may be utilized in which the coating material does not act as a contaminant to the deposition process, thereby eliminating contamination of the sample surface due to deposition of unwanted grid material. Also provided are methods of refurbishing a coated grid by periodically replacing the coating material thus protecting the grid itself and allowing a grid to be used indefinitely. 1. A deposition system comprising:an ion source suitable for providing a beam of selected ions, the ion source comprising at least one coated grid, the coated grids comprising: an electrically conductive substrate comprising a plurality of apertures extending through a thickness direction of the substrate; and a coating covering an outer surface of the substrate, wherein the coating is formed of a metallic or semiconducting material; and a deposition chamber receiving the beam of selected ions when emitted from the ion source.2. The system of claim 1 , wherein the substrate comprises molybdenum claim 1 , graphite claim 1 , titanium or a titanium alloy.3. The system of claim 1 , wherein at least a portion of the substrate has a mean radius of curvature selected from the range of ±10 cm to ±10 m.4. The system of claim 1 , wherein a mean thickness of the grid is selected from the range of 0.1 mm to 1 cm.5. The system of claim 1 , wherein the apertures are positioned in a pattern selected from one of the group consisting of a square claim 1 , a triangle or a hexagon claim 1 , a mean diameter of the apertures is selected from the range from 0.1 mm to 1 cm claim 1 , and a mean center-center distance between adjacent apertures is selected from the range of 0.1 mm to 1 cm.68- (canceled)9. The system of claim 1 , wherein the coating is selected from the group consisting of: titanium claim 1 , ...

System for Generating High Speed Flow of an Ionized Gas

The invention relates to a system for generating an ion stream which may be useful for various applications. In one application, the ion stream may be used to excite nano-spheres. In another application, the ion stream may be used for sterilization and therapy in accordance with the teachings of the invention. 1. An ion generating system comprising:driver electronics for generating an AC supply;an ion source system including a primary coil connected to the driver electronics, a secondary coil coaxially positioned within the primary coil, and conductive connectors connected to the secondary coil;a conduit having a first end extending from the ion generating system, and conductive connections passing from the secondary coil through an internal passage of the conduit;a nozzle affixed to a second end of the conduit, anda gas source supplying gas to an inlet end of the nozzle, gas flowing into the nozzle ionized while passing through the nozzle and outward through an outlet end of the nozzle under the influence of an electric field produced by the secondary coil, the electric field transferred into the nozzle via the conductive connector.2. The system according to claim 1 , wherein the secondary coil is configured to generate a frequency and voltage configured to oscillate at a natural frequency of a metallic substance in a medium.3. The system according to claim 1 , wherein the conductive connector comprises a first and second supply wire claim 1 , the first and second supply wire conductively connected to a first end of the secondary coil.4. The system according to claim 3 , wherein the nozzle comprises a conductive rod conductively connected to a second end of the first supply wire.5. The system according to claim 4 , wherein the nozzle comprises a ring aligned with the conductive rod such that a longitudinal axis of the conductive rod passes centrally through an opening inside the ring.6. The system according to claim 5 , wherein the conductive rod is needle like in ...

METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT

An ion beam treatment or implantation system includes an ion source emitting a plurality of parallel ion beams having a given spacing. A first lens magnet having a non-uniform magnetic field receives the plurality of ion beams from the ion source and focuses the plurality of ion beams toward a common point. The system may optionally include a second lens magnet having a non-uniform magnetic field receiving the ion beams focused by the first lens magnet and redirecting the ion beams such that they have a parallel arrangement having a closer spacing than said given spacing in a direction toward a target substrate. 1. An ion beam treatment or implantation system , comprising:an ion source emitting a plurality of parallel ion beams on a single plane having a given spacing, and wherein each of the plurality of parallel ion beams is point-shaped; anda first lens magnet having a non-uniform magnetic field receiving the plurality of ion beams from the ion source and focusing the plurality of ion beams toward a common point.2. The system of claim 1 , further comprising a deflector coupled to the ion source for deflecting the plurality of parallel ion beams for ion energy and mass separation.3. The system of claim 1 , wherein the ion source includes a plurality of magnetic deflectors and a resolving plate having a plurality of holes each associated with one of the magnetic deflectors claim 1 , said resolving plate configured to only pass through ions having a select mass to energy ratio.4. The system of claim 1 , wherein the ion source comprises:a microwave source;a waveguide conduit having a plurality of openings therein, said waveguide conduit being coupled to the microwave source for transmitting microwaves from the microwave source through the plurality of openings;a plasma chamber in communication with the waveguide conduit through the plurality of openings, said plasma chamber receiving through said plurality of openings microwaves from the waveguide conduit, said ...

IMPLANTER CALIBRATION

The present disclosure relates to a method includes generating ions with an ion source of an ion implantation apparatus based on an ion implantation recipe. The method includes accelerating the generated ions based on an ion energy setting in the ion implantation recipe and determining an energy spectrum of the accelerated ions. The method also includes analyzing a relationship between the determined energy spectrum and the ion energy setting. The method further includes adjusting at least one parameter of a final energy magnet (FEM) of the ion implantation apparatus based on the analyzed relationship. 1. A method , comprisinggenerating ions, with an ion source of anion implantation apparatus, based on an ion implantation recipe;accelerating the generated ions based on an ion energy setting in the ion implantation recipe;determining an energy spectrum of the accelerated ions;analyzing a relationship between the determined energy spectrum and the ion energy setting; andadjusting at least one parameter of a final energy magnet (FEM) of the ion implantation apparatus based on the analyzed relationship.2. The method of claim 1 , wherein the at least one parameter comprises a beam control current of the FEM.3. The method of claim 1 , further comprising determining a peak energy of the determined energy spectrum.4. The method of claim 3 , wherein the relationship comprises a difference between the peak energy and the ion energy setting.5. The method of claim 4 , wherein the adjusting the at least one parameter comprises adjusting the at least one parameter such that the difference between the peak energy and the ion energy setting is less than a predetermined value.6. The method of claim 5 , wherein the predetermined value comprises an energy difference of about 1% of the ion energy setting.7. The method of claim 5 , wherein the predetermined value comprises an energy difference of about 3% of the ion energy setting.8. The method of claim 5 , wherein the predetermined ...

LIGHT BATH FOR PARTICLE SUPPRESSION

An apparatus, referred to as a light bath, is disposed in a beamline ion implantation system and is used to photoionize particles in the ion beam into positively charged particles. Once positively charged, these particles can be manipulated by the various components in the beamline ion implantation system. In certain embodiments, a positively biased electrode is disposed downstream from the light bath to repel the formerly non-positively charged particles away from the workpiece. In certain embodiments, the light bath is disposed within an existing component in the beamline ion implantation system, such as a deceleration stage or a Vertical Electrostatic Energy Filter. The light source emits light at a wavelength sufficiently short so as to ionize the non-positively charged particles. In certain embodiments, the wavelength is less than 250 nm. 1. An apparatus for reducing an amount of non-positively charged particles in an ion beam , comprising:a light source, disposed on one side of the ion beam and emitting light at a wavelength sufficiently short so as to ionize non-positively charged particles into positively charged particles; anda positively biased electrode downstream from the light source, to repel the positively charged particles, wherein the ion beam is directed toward a workpiece after exposure to the light source.2. The apparatus of claim 1 , wherein the wavelength is less than 250 nm.3. The apparatus of claim 1 , wherein the wavelength is less than 200 nm.4. The apparatus of claim 1 , further comprising a light sink to absorb light emitted by the light source.5. The apparatus of claim 4 , wherein the light sink is disposed on an opposite side of the ion beam from the light source.6. The apparatus of claim 1 , wherein the non-positively charged particles comprise neutral particles.7. The apparatus of claim 1 , wherein the non-positively charged particles comprise negatively charged particles.8. A beamline ion implantation system claim 1 , comprising:an ...

Method Of Improving Ion Beam Quality In An Implant System

A method for improving the ion beam quality in an ion implanter is disclosed. In some ion implantation systems, contaminants from the ion source are extracted with the desired ions, introducing contaminants to the workpiece. These contaminants may be impurities in the ion source chamber. This problem is exacerbated when mass analysis of the extracted ion beam is not performed, and is further exaggerated when the desired feedgas includes a halogen. The introduction of a diluent gas in the ion chamber may reduce the deleterious effects of the halogen on the inner surfaces of the chamber, reducing contaminants in the extracted ion beam. In some embodiments, the diluent gas may be germane or silane. 1. A method of implanting ions into a workpiece , comprising:introducing a first source gas and a second source gas into a chamber of an ion source, said first source gas comprising molecules containing a dopant and fluorine, and said second source gas comprising molecules containing hydrogen and germanium;ionizing said first source gas and said second source gas in said chamber, wherein germanium coats walls of the chamber; andextracting ions from said chamber and accelerating said ions toward said workpiece.2. The method of claim 1 , wherein said dopant is different from germanium.3. The method of claim 2 , wherein said dopant comprises a Group 3 element.4. The method of claim 2 , wherein said dopant comprises a Group 5 element.5. The method of claim 1 , comprising implanting the ions in said workpiece without mass analysis.6. The method of claim 1 , where between 10% and 20% of a total volume of gas introduced comprises the second source gas and a remainder of the total volume of gas introduced is the first source gas.7. A method of implanting ions into a workpiece claim 1 , comprising:introducing a first source gas and a second source gas into a chamber of an ion source, said first source gas comprising molecules containing a dopant and fluorine, and said second source ...

System And Method For Improved Beam Current From An Ion Source

An IHC ion source that employs a negatively biased cathode and one or more side electrodes is disclosed. The one or more side electrodes are biased using an electrode power supply, which supplies a voltage of between 0 and −50 volts, relative to the chamber. By adjusting the output from the electrode power supply, beam current can be optimized for different species. For example, certain species, such as arsenic, may be optimized when the side electrodes are at the same voltage as the chamber. Other species, such as boron, may be optimized when the side electrodes are at a negative voltage relative to the chamber. In certain embodiments, a controller is in communication with the electrode power supply so as to control the output of the electrode power supply, based on the desired feed gas. 1. An ion source , comprising:a chamber, comprising at least one electrically conductive wall;a cathode disposed on one end of the chamber;a first side electrode disposed on one side wall;an arc power supply to bias the cathode at a negative voltage relative to the electrically conductive wall; andan electrode power supply to bias the first side electrode, where an output of the electrode power supply is between 0 and −50V relative to the electrically conductive wall.2. The ion source of claim 1 , further comprising a controller in communication with the electrode power supply.3. The ion source of claim 2 , wherein the controller varies the output of the electrode power supply based on a feed gas that is used.4. The ion source of claim 3 , wherein the controller sets the output of the electrode power supply to 0V if an arsenic-based feed gas is used.5. The ion source of claim 3 , wherein the controller sets the output of the electrode power supply to a value between −5V and −50V if a boron-based feed gas is used.6. The ion source of claim 3 , wherein the controller sets the output of the electrode power supply to a value between −8V and −30V if a boron-based feed gas is used.7. The ...

Tattletale ion-implanted nanoparticles

Ion-doped metal or ceramic nanoparticles can be added into, for example, a component that upon exposure to an environmental stimulus, will release the ion and ‘tattle’ on any impending destruction. 1. A tattletale nanoparticle , comprising an ion-implanted nanoparticle that releases the implanted ion in response to a stimulus.2. The tattletale nanoparticle of claim 1 , wherein the nanoparticle is implanted to a dose of greater than 1eions/cm.3. The tattletale nanoparticle of claim 1 , wherein the nanoparticle comprises a ceramic nanoparticle.4. The tattletale nanoparticle of claim 3 , wherein the ceramic nanoparticle comprises beohmite claim 3 , yttria claim 3 , or ceria.5. The tattletale nanoparticle of claim 1 , wherein the nanoparticle comprises a metal nanoparticle.6. The tattletale nanoparticle of claim 1 , wherein the implanted ion comprises a noble gas.7. The tattletale nanoparticle of claim 1 , wherein the implanted ion comprises an ionizable gas.8. The tattletale nanoparticle of claim 1 , wherein the implanted ion comprises a reactive dopant or controlled ion alloy.9. The tattletale nanoparticle of claim 1 , wherein the stimulus comprises a physical stimulus.10. The tattletale nanoparticle of claim 9 , wherein the physical stimulus comprises heating the nanoparticle to above a release temperature.11. The tattletale nanoparticle of claim 9 , wherein the physical stimulus comprises mechanical crushing.12. The tattletale nanoparticle of claim 1 , wherein the stimulus comprises a chemical stimulus.13. A method for non-destructive testing claim 1 , comprising:providing a plurality of ion-implanted metal or ceramic nanoparticles in a component under test,exposing the component to an environmental stimulus, thereby causing the implanted ion to be released in response to the environmental stimulus, anddetecting the released implanted ions.14. The method of claim 13 , wherein the environmental stimulus comprises a physical stimulus.15. The method of claim 13 , ...

AN ION IMPLANTATION MACHINE PRESENTING INCREASED PRODUCTIVITY

The present invention relates to an ion implantation machine that comprises: 1100. An ion implantation machine () comprising:{'b': 101', '301', '401', '102', '303, 'an enclosure (, , ) that is connected to a pump device (, );'}{'b': 115', '121', '122', '304', '320', '330', '340', '405', '406, 'a plasma source (--, -, -, -);'}{'b': 113', '327, 'a bias power supply (, );'}{'b': 117', '302', '402, 'a gas inlet (, , ) leading into the enclosure; and'}{'b': 104', '304, 'a substrate-carrier (, ) connected to the negative pole of the bias power supply and arranged inside said enclosure;'}the machine being characterized in that:{'b': 104', '304', '105', '106', '305', '306', '307', '308', '309, 'said substrate-carrier (, ) consists in at least two parallel plates (-, ----);'}{'b': 110', '321', '322', '323', '324, 'a reference electrode consists in at least one strip (, ---), this reference electrode being connected to the positive pole of said bias power supply; and'}said strip is interposed between the two plates.2304305306307308309310. An ion implantation machine according to claim 1 , characterized in that said substrate-carrier () has more than two plates claim 1 , these plates ( claim 1 , claim 1 , claim 1 , claim 1 , ) being assembled at their bases on a baseplate ().3321322323324325. An ion implantation machine according to claim 2 , characterized in that said reference electrode consists in a plurality of strips ( claim 2 , claim 2 , claim 2 , ) assembled at their bases to a support () claim 2 , each of said strips being interposed between two consecutive plates.4304320. An ion implantation machine according to claim 2 , characterized in that said plasma source is constituted by said substrate-carrier () and said support () claim 2 , a discharge voltage being applied between these two elements.5340301304. An ion implantation machine according to claim 1 , characterized in that said plasma source is a radiofrequency (RF) antenna () surrounding said enclosure () in ...

ION GENERATOR AND METHOD FOR USING THE SAME

Ion generators for ion implanters are provided. The ion generator for an ion implanter includes an ion source arc chamber including an arc chamber housing and a thermal electron emitter coupled to the arc chamber housing. In addition, the thermal electron emitter includes a filament and a cathode, and the cathode has a solid top portion made of a work function modified conductive material including tungsten (W) and a work function modification metal. 1. An ion generator for an ion implanter , comprising:an ion source arc chamber comprising an arc chamber housing; anda thermal electron emitter coupled to the arc chamber housing, wherein the thermal electron emitter comprises a filament and a cathode,wherein the cathode has a solid top portion made of a work function modified conductive material comprising tungsten (W) and a work function modification metal, and the filament is also made of the work function modified conductive material.2. The ion generator for an ion implanter as claimed in claim 1 , wherein the work function modification metal comprises lanthanum (La) claim 1 , Cerium (Ce) claim 1 , or thorium (Th).3. The ion generator for an ion implanter as claimed in claim 1 , wherein the work function modified conductive material is an alloy of lanthanum and tungsten.4. The ion generator for an ion implanter as claimed in claim 1 , wherein the cathode further comprises a hollow bottom portion connected to the solid top portion claim 1 , and the solid top portion and the hollow bottom portion are made of different materials.5. The ion generator for an ion implanter as claimed in claim 4 , wherein the filament is disposed in a hollow region of the hollow bottom portion of the cathode and is not in physical contact with the cathode.6. (canceled)7. The ion generator for an ion implanter as claimed in claim 1 , wherein a concentration of the work function modification metal in the work function modified conductive material is in a range from about 1.5 vol % to about ...

Boron Implanting Using A Co-Gas

An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used. 1. A method of implanting dopant into a workpiece , comprising:introducing a first source gas into a first sub-chamber of a chamber of an ion source, the first source gas comprising a dopant and fluorine;introducing argon into a second sub-chamber of the chamber;ionizing the first source gas and the argon in the chamber;extracting ions from the first sub-chamber as a dopant ion beam and directing the dopant ion beam toward the workpiece; andextracting ions from the second sub-chamber as an argon ion beam and directing the argon ion beam toward the workpiece, where the argon ion beam strikes a location on the workpiece concurrently or after the location has been implanted by the dopant ion beam.2. The method of claim 1 , further comprising:introducing a second source gas into the first sub-chamber, the second source gas comprising hydrogen and at least one of silicon and germanium;ionizing the second source gas in the first sub-chamber; andextracting ions of the second source gas as part of the dopant ion beam.3. The method of claim 1 , wherein the dopant ion beam and the argon ion beam are focused so as to simultaneously strike the location of the workpiece.4. ...

FOCUSED ION BEAM APPARATUS

A focused ion beam apparatus includes an ion source that emits an ion beam, an extraction electrode that extracts ions from a tip end of an emitter of the ion source, and a first lens electrode that configures a condenser lens by a potential difference with the extraction electrode, the condenser lens focusing the ions extracted by the extraction electrode, in which a strong lens action is generated between the extraction electrode and the first lens electrode so as to focus all ions extracted from the ion source to pass through a hole of the condenser lens including the first lens electrode. 1. A focused ion beam apparatus comprising:an ion source that emits an ion beam;an extraction electrode that extracts ions from a tip end of an emitter of the ion source; anda first lens electrode that configures a condenser lens by a potential difference with the extraction electrode, the condenser lens being configured to focus the ions extracted by the extraction electrode,wherein a strong lens action is generated between the extraction electrode and the first lens electrode so as to focus all ions extracted from the ion source to pass through the condenser lens including the first lens electrode.2. The focused ion beam apparatus according to claim 1 , wherein claim 1 , even when an accelerating voltage applied to the emitter is changed claim 1 , a potential difference between the emitter and the extraction electrode is maintained to be a predetermined value claim 1 , and a potential difference between the emitter and the first lens electrode is controlled to become a constant voltage difference.3. The focused ion beam apparatus according to claim 1 ,wherein the extraction electrode comprises a first extraction electrode and a second extraction electrode,wherein the focused ion beam apparatus further comprises a control electrode between the first extraction electrode and the second extraction electrode, andwherein a size of a hole of the first extraction electrode is ...

ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD

In one embodiment, an ion implantation apparatus includes an ion source configured to generate an ion beam. The apparatus further includes a scanner configured to change an irradiation position with the ion beam on an irradiation target. The apparatus further includes a first electrode configured to accelerate an ion in the ion beam. The apparatus further includes a controller configured to change at least any of energy and an irradiation angle of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source. 1. An ion implantation apparatus comprising:an ion source configured to generate an ion beam;a scanner configured to change an irradiation position with the ion beam on an irradiation target;a first electrode configured to accelerate an ion in the ion beam; anda controller configured to change at least any of energy and an irradiation angle of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source.2. The apparatus of claim 1 , further comprising a plurality of second electrodes provided on a side of a subsequent stage of the first electrode and configured to accelerate the ion in the ion beam claim 1 ,wherein the controller changes the energy of the ion beam according to the irradiation position by controlling voltages to be applied to the plurality of second electrodes for each of the second electrodes.3. The apparatus of claim 2 , wherein the plurality of second electrodes are disposed to be adjacent to each other in a direction parallel to a front surface of the irradiation target.4. The apparatus of claim 2 , wherein the plurality of second electrodes are disposed to be shifted from each other in a direction parallel to a front surface of the irradiation target.5. The apparatus of claim 1 , further comprising a second electrode provided on a side of a subsequent stage of the first electrode and configured to accelerate the ion in the ...

METHOD AND APPARATUS FOR A POROUS ELECTROSPRAY EMITTER

An ionic liquid ion source can include a microfabricated body including a base and a tip. The body can be formed of a porous material compatible with at least one of an ionic liquid or room-temperature molten salt. The body can have a pore size gradient that decreases from the base of the body to the tip of the body, such that the at least one of an ionic liquid or room-temperature molten salt is capable of being transported through capillarity from the base to the tip. 1. (canceled)2. An electrospray emitter comprising:an emitter body with a base and a tip;a source of ions in fluid communication with the emitter body; anda first electrode electrically connected to the emitter body through the source of ions.3. The electrospray emitter of claim 2 , wherein the source of ions comprises at least one of an ionic liquid and a room-temperature molten salt.4. The electrospray emitter of claim 2 , further comprising a second electrode positioned downstream relative to the emitter body and the first electrode.5. The electrospray emitter of claim 2 , wherein the emitter body is porous.6. The electrospray emitter of claim 5 , wherein at least a portion of the emitter body is disposed in or on the source of ions such that the source of ions is transported by capillarity from the base of the emitter body to the tip of the emitter body.7. The electrospray emitter of claim 5 , wherein when a voltage potential is applied to the source of ions claim 5 , ions are emitted by the emitter body and the source of ions is transported by capillarity from the base of the emitter body to the tip of the emitter body.8. The electrospray emitter of claim 5 , wherein pores of the porous emitter body have a diameter between or equal to about 3 μm and 50 μm.9. The electrospray emitter of claim 2 , wherein the emitter body comprises at least one of a metal claim 2 , a dielectric material claim 2 , and a xerogel.10. The electrospray emitter of claim 2 , wherein a radius of curvature of the emitter ...

CHARGED PARTICLE MICROSCOPE

The ionized gas supplied to the emitter tip of a gas field ionization ion source is cooled and purified to enable supplying a reliable and stable ion beam. Impurities contained in the ionized gas destabilize the field ionization ion source. The invention is configured to include a first heat exchanger thermally connected to a part of the field ionization ion source, a cryocooler capable of cooling a second gas line and a cold head, the second gas line being connected to the first heat exchanger and circulating a refrigerant, and a second heat exchanger that cools the first and second gas lines and is connected to the cold head. 1. A charged particle microscope that has a field ionization ion source ,the microscope comprising:an emitter tip having a needle-like apex;an ionization chamber having the emitter tip inside the chamber;a first heat exchanger connected to a part of the ionization chamber via a cooling conductor,a cryocooler having a second heat exchanger,a first gas line that supplies a gas to the ionization chamber via the second heat exchanger; anda second gas line thermally connected to the first heat exchanger and the second heat exchanger.2. The charged particle microscope according to claim 1 ,wherein the second heat exchanger is thermally connected to a vacuum chamber retaining a gas molecule supplied to the first gas line, andwherein a mechanism by which a gas flow rate through the first gas line is adjusted is provided on a path between the vacuum chamber and the first gas line.3. The charged particle microscope according to claim 2 , wherein the gas running through the second gas line is partially suppliable to the ionization chamber.4. The charged particle microscope according to claim 1 , comprising:a first device mount that holds the field ionization ion source, a sample holder for holding a sample, and a lens group for converging an ion beam; andan antivibration mechanism that reduces a vibration of the device mount,wherein the cryocooler is ...

ETCHING APPARATUS AND ETCHING METHOD

An etching apparatus includes a substrate holder configured to hold a substrate, a first ion source that generates first ions and irradiates the substrate with the first ions such that the first ions are incident on the substrate in the substrate holder at a first incident angle, and a second ion source that generates second ions and irradiates the substrate with the second ions such that the second ions are incident on the substrate at a second incident angle different from the first incident angle. A controller is provided that controls at least one of the first incident angle and the second incident angle by moving at least one of the first ion source and the second ion source. 1. An etching apparatus , comprising:a substrate holder configured to hold a substrate;a first ion source that generates first ions and irradiates the substrate with the first ions such that the first ions are incident on the substrate in the substrate holder at a first incident angle;a second ion source that generates second ions and irradiates the substrate with the second ions such that the second ions are incident on the substrate at a second incident angle different from the first incident angle; anda controller configured to control at least one of the first incident angle and the second incident angle by moving at least one of the first ion source and the second ion source.2. The etching apparatus according to claim 1 , wherein the control section can move the first ion source angle and the second ion source independently of one another.3. The etching apparatus according to claim 1 , wherein at least one of the first or second ion source includes a grid electrode.4. The etching apparatus according claim 1 , wherein the first ions and the second ions etch a pattern on the substrate.5. The etching apparatus according claim 1 , wherein the first ions and the second ions are a same type of ion.6. The etching apparatus according to claim 1 , further comprising:a rail upon which the first ...

ION SOURCE DEVICES AND METHODS

An ion source includes a chamber defining an interior cavity for ionization, an electron beam source at a first end of the interior cavity, an inlet for introducing ionizable gas into the chamber, and an arc slit for extracting ions from the chamber. The chamber includes an electrically conductive ceramic. 1. A method for doping a semiconductor , the method comprising:ionizing a gas within a chamber of an ion source, the chamber comprising an electrically conductive ceramic;placing a target semiconductor material in an implantation target area;producing an ion stream with the ion source;aiming the ion stream at the target semiconductor material; andimplanting the target semiconductor with ions from the ion stream.2. The method of claim 1 , wherein the ion source comprises:an interior cavity for ionization defined by the chamber;an electron beam source at a first end of the interior cavity;an inlet for introducing an ionizable gas into the chamber; andan arc slit for extracting ions from the chamber.3. The method of claim 1 , wherein the ion stream is produced such that it is relatively free of heavy metals.4. The method of claim 1 , wherein the electrically conductive ceramic comprises a hexaboride substance.5. The method of claim 1 , wherein the electrically conductive ceramic is selected from the group consisting of: lanthanum hexaboride (LaB) claim 1 , calcium hexaboride (CaB) claim 1 , cerium hexaboride (CeB) claim 1 , and europium hexaboride (EuB).6. The method of claim 1 , wherein the electrically conductive ceramic is lanthanum hexaboride (LaB).7. The method of claim 6 , wherein the lanthanum hexaboride (LaB) in the chamber amplifies the ion stream.8. The method of claim 1 , wherein the gas is a halogen gas.9. The method of claim 8 , wherein the halogen gas is germanium tetrafluoride (GeF).10. A method for generating an ion beam claim 8 , the method comprising: a chamber defining an interior cavity for ionization;', 'an electron beam source at a first end of ...

GRID, METHOD OF MANUFACTURING THE SAME, AND ION BEAM PROCESSING APPARATUS

A grid of the present invention is a plate-shaped grid provided with a hole. The grid is formed of a carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the grid, and the hole is formed in the grid so as to cut off the carbon fibers. 1. A plate-shaped grid provided with a hole , whereinthe grid is formed of a carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the grid, andthe hole is formed in the grid so as to cut off the carbon fibers.2. The grid according to claim 1 , wherein the carbon fibers included in the carbon-carbon composite are chopped carbon fibers.3. The grid according to claim 1 , wherein at least part of the carbon-carbon composite is coated with a different material from the carbon-carbon composite.4. An ion beam processing apparatus comprising:a plasma generating unit;a processing chamber; and{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a grid assembly including the grid according to and configured to extract ions from plasma generated by the plasma generating unit to the processing chamber.'}5. A method of manufacturing a grid comprising:preparing a plate-shaped carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the carbon-carbon composite; andforming a hole in the carbon-carbon composite so as to cut off the carbon fibers by using a processing tool configured to perform cutting by rotary motion. This application is a continuation application of International Application No. PCT/JP2015/005851, filed Nov. 25, 2015, which claims the benefit of Japanese Patent Application No. 2015-052363 filed Mar. 16, 2015. The contents of the aforementioned applications are incorporated herein by reference in their entireties.Field of the InventionThe present invention relates to a grid plate, a method of manufacturing the same, and an ion beam processing apparatus.Description of the Related ArtIon ...

SiC Coating In An Ion Implanter

An ion implanter has a coating of low resistivity silicon carbide on one or more of the conductive surfaces that are exposed to ions. For example, ions are generated in an ion source chamber, and the interior surfaces of the walls are coated with low resistivity silicon carbide. Since silicon carbide is hard and resistant to sputtering, this may reduce the amount of contaminant ions that are introduced into the ion beam that is extracted from the ion source chamber. In some embodiments, the extraction electrodes are also coated with silicon carbide to reduce the contaminant ions introduced by these components. 1. An ion implanter , comprising:an ion source comprising an ion source chamber having a first wall, an opposite conductive second wall and a plurality of conductive side walls, where an extraction aperture is disposed in said second wall; andan extraction electrode assembly disposed proximate said extraction aperture and outside said ion source chamber, said extraction electrode assembly comprising one or more conductive electrodes;wherein at least one conductive component is coated with low resistivity silicon carbide.2. The ion implanter of claim 1 , wherein said silicon carbide has a resistivity of less than 1 ohm-cm.3. The ion implanter of claim 1 , wherein said side walls each comprise an interior surface facing an interior of said ion source chamber claim 1 , and said interior surfaces are coated with said low resistivity silicon carbide.4. The ion implanter of claim 1 , wherein an interior surface of said second wall is coated with said low resistivity silicon carbide.5. The ion implanter of claim 1 , wherein a surface of said conductive electrodes is coated with said low resistivity silicon carbide.6. The ion implanter of claim 5 , wherein each of said conductive electrodes comprise a respective aperture claim 5 , and a portion of each of said conductive electrodes surrounding said respective aperture is coated with said low resistivity silicon ...

ION SOURCE

The invention provides an ion source comprising first and second cathode pole pieces spaced apart from one another to form a cavity therebetween, an edge of the first cathode pole piece being spaced apart from an edge of the second cathode pole piece to define an elongate cathode gap between the respective edges of the pole pieces, the elongate cathode gap having a longitudinal axis; at least one magnet arranged for magnetising the first and second cathode pole pieces with opposite magnetic polarities; an elongate anode located in the cavity, the anode being spaced apart from the first and second cathode pole pieces and having a longitudinal axis, the longitudinal axis of the elongate anode and the longitudinal axis of the elongate cathode gap substantially coplanar; a first electrical connection which extends from outside the cavity to the anode; and a gas feed conduit which extends from outside the cavity to inside the cavity for introducing a gas into the cavity. 1. An ion source comprising:first and second cathode pole pieces spaced apart from one another to form a cavity therebetween, an edge of the first cathode pole piece being spaced apart from an edge of the second cathode pole piece to define an elongate cathode gap between the respective edges of the pole pieces, the elongate cathode gap having a longitudinal axis;at least one magnet arranged for magnetising the first and second cathode pole pieces with opposite magnetic polarities;an elongate anode located in the cavity, the anode being spaced apart from the first and second cathode pole pieces and having a longitudinal axis, the longitudinal axis of the elongate anode and the longitudinal axis of the elongate cathode gap substantially coplanar;a first electrical connection which extends from outside the cavity to the anode; anda gas feed conduit which extends from outside the cavity to inside the cavity for introducing a gas into the cavity.2. An ion source as claimed in claim 1 , wherein the at least ...

ARC CHAMBER WITH MULTIPLE CATHODES FOR AN ION SOURCE

An apparatus for extending the useful life of an ion source, comprising an arc chamber containing a plurality of cathodes to be used sequentially and a plurality of repellers to protect cathodes when not in use. The arc chamber includes an arc chamber housing defining a reaction cavity, gas injection openings, a plurality of cathodes, and at least one repeller element. A method for extending the useful life of an ion source includes providing power to a first cathode of an arc chamber in an ion source, operating the first cathode, detecting a failure or degradation in performance of the first cathode, energizing a second cathode, and continuing operation of the arc chamber with the second cathode. 1. An apparatus for extending the useful life of an ion source comprising:an arc chamber housing defining a reaction cavity, the arc chamber having a plurality of gas injection openings and a recess in at least one wall thereof;at least one repeller element, comprising a repeller mounted to a clapboard, said repeller element pivotally mounted to rotate around an axis from a first position extending across the reaction cavity to a second position in the recess of the arc chamber housing; anda plurality of cathodes, mounted in the reaction cavity such that a first one of the plurality of cathodes is directly exposed to the reaction cavity, and a second one of the plurality of cathodes is covered by the at least one repeller element when the at least one repeller element is in the first position.2. The apparatus of claim 1 , further comprising a power supply for providing electrical power to a selectable one of the plurality of cathodes.3. The apparatus of claim 1 , further comprising a plurality of power supplies claim 1 , wherein each of the plurality of cathodes is electrically powered independently by a respective one of the plurality of power supplies.4. The apparatus of claim 1 , further comprising:at least one rotation assembly connected to the at least one repeller ...

Apparatus and method for ionizing an analyte, and apparatus and method for analyzing an ionized analyte

The present invention discloses an ionization apparatus 10 for ionizing an analyte S, comprising an inlet E, an outlet A, a first electrode 1, a second electrode 2 and a dielectric element 3. The first electrode 1, the second electrode 2 and the dielectric element 3 are arranged relative to one another such that, by applying an electric voltage between the first electrode 1 and the second electrode 2, a dielectric barrier discharge is establishable in a discharge area 5 in the ionization apparatus 10. The first and second electrodes 1, 2 are arranged such that they are displaceable or movable relative to each other.

ION IMPLANTATION PROCESSES AND APPARATUS USING GALLIUM

An ion source apparatus for ion implantation is described, including an ion source chamber, and a consumable structure in or associated with the ion source chamber, in which the consumable structure includes a solid dopant source material susceptible to reaction with a reactive gas for release of dopant in gaseous form to the ion source chamber, wherein the solid dopant source material comprises gallium nitride, gallium oxide, either of which may be isotopically enriched with respect to a gallium isotope, or combinations thereof. 1. An ion source apparatus capable of generating gallium ions , the apparatus comprising:an ion source chamber; anda consumable structure in or associated with the ion source chamber, said consumable structure comprising gallium nitride, gallium oxide, or a combination thereof.2. An ion source apparatus of claim 1 , the apparatus comprising an ion source chamber that includes:an interior defined by interior surfaces that include sidewalls, a bottom, and a top,a cathode and an anti-cathode at the interior, andone or more gallium-containing sheet structures at the interior and covering one or more of the interior surfaces, the one or more gallium-containing sheet structures comprising gallium nitride, gallium oxide, or a combination thereof.3. An apparatus of wherein the one or more gallium-containing sheet structures can be removed from the interior.4. An apparatus of claim 2 , wherein the one or more gallium-containing sheets structures comprise at least 80 percent by weight gallium nitride.5. An apparatus of claim 2 , wherein the one or more gallium-containing sheet structures comprise at least 80 percent by weight gallium oxide.62. An apparatus of claim claim 2 , wherein the one or more gallium-containing sheet structures comprise at least 80 percent by weight of a combination of gallium oxide and gallium nitride.7. An apparatus of claim 2 , wherein the interior contains:one or more gallium-containing sheets structures comprise at least ...

REPELLER, CATHODE, CHAMBER WALL AND SLIT MEMBER FOR ION IMPLANTER AND ION GENERATING DEVICES INCLUDING THE SAME

Provided are elements for an ion implanter and an ion generating device including the same. The elements include a repeller, a cathode, a chamber wall, and a slit member constituting an arc chamber of an ion generating device for ion implantation used in the fabrication of a semiconductor device. A coating structure including a semicarbide layer is provided to each of the elements in order to stabilize the element against thermal deformation, protect the element from wear, and prevent a deposition product from being peeled off. The coating structure enables precise ion implantation without a change in the position of ion generation or distortion of the equipment. The coating structure allows electrons to be uniformly reflected into the arc chamber to increase the uniformity of plasma, resulting in an improvement in the dissociation efficiency of an ion source gas. The coating structure significantly improves the service life of the element compared to those of existing elements. Also provided are ion generating devices including the elements. 1. A chamber wall mounted inside an arc chamber of an ion generating device for an ion implanter to define a space where ions are generated wherein the chamber wall covers four sides of the arc chamber and its portion corresponding to at least one of the four sides of the arc chamber has a refractory metal material as a base material forming its shape and has a coating structure comprising a semicarbide layer on at least one surface of the base material.2. The chamber wall according to claim 1 , wherein the coating structure comprising a semicarbide layer comprises a refractory metal carbide structure in which a continuous or discontinuous refractory metal monocarbide layer is layered on a continuous or discontinuous refractory metal semicarbide layer.3. The chamber wall according to claim 1 , wherein the coating structure comprising a semicarbide layer comprises a refractory metal carbide structure in which a continuous or ...

ION BEAM ETCHING WITH GAS TREATMENT AND PULSING

One or more layers of a magnetic random access memory (MRAM) stack on a substrate are etched by ion beam etching. An ion beam of an inert gas is generated in an ion beam source chamber and applied to a substrate in a continuous or pulsed manner. Without passing through the ion beam source chamber, a reactive gas is flowed directly into a processing chamber in which the substrate is located, where the reactive gas is pulsed or continuously provided into the processing chamber. The reactive gas may include a carbon-containing gas having a hydroxyl group that is flowed towards the substrate to limit re-deposition of sputtered atoms on exposed surfaces of the substrate from ion beam etching. 1. A method of ion beam etching a substrate , the method comprising:generating an ion beam of an inert gas from an ion beam source chamber;applying the ion beam of the inert gas to a substrate in a processing chamber outside the ion beam source chamber, wherein the ion beam etches one or more layers of a magnetic random access memory (MRAM) stack on the substrate; andintroducing a reactive gas directly into the processing chamber and towards the substrate.2. The method of claim 1 , wherein the reactive gas includes a carbon-containing gas having a hydroxyl group.3. The method of claim 2 , wherein the carbon-containing gas is selected from a group consisting of: an alcohol claim 2 , a carboxylic acid claim 2 , an organic hydroperoxide claim 2 , a hemiacetal claim 2 , and a hemiketal.4. The method of claim 3 , wherein the carbon-containing gas includes methanol.5. The method of claim 1 , wherein the reactive gas includes a fluorine-containing gas or a nitrogen-containing gas.6. The method of claim 1 , wherein the MRAM stack includes an MTJ stack claim 1 , wherein the MTJ stack includes a top magnetic layer claim 1 , a bottom magnetic layer claim 1 , and a tunnel barrier layer between the top magnetic layer and the bottom magnetic layer.7. The method of claim 1 , wherein sidewalls of ...

Method Of Improving Ion Beam Quality In A Non-Mass-Analyzed Ion Implantation System

A method of processing a workpiece is disclosed, where the plasma chamber is first coated using a conditioning gas and optionally, a co-gas. The conditioning gas, which is disposed within a conditioning gas container may comprise a hydride of the desired dopant species and a filler gas, where the filler gas is a hydride of a Group 4 or Group 5 element. The remainder of the conditioning gas container may comprise hydrogen gas. Following this conditioning process, a feedgas, which comprises fluorine and the desired dopant species, is introduced to the plasma chamber and ionized. Ions are then extracted from the plasma chamber and accelerated toward the workpiece, where they are implanted without being first mass analyzed. In some embodiments, the desired dopant species may be boron.

HYDROGEN GENERATOR FOR AN ION IMPLANTER

A terminal for an ion implantation system is provided, wherein the terminal has a terminal housing for supporting an ion source configured to form an ion beam. A gas box within the terminal housing has a hydrogen generator configured to produce hydrogen gas for the ion source. The gas box is electrically insulated from the terminal housing, and is further electrically coupled to the ion source. The ion source and gas box are electrically isolated from the terminal housing by a plurality of electrical insulators. A plurality of insulating standoffs electrically isolate the terminal housing from an earth ground. A terminal power supply electrically biases the terminal housing to a terminal potential with respect to the earth ground. An ion source power supply electrically biases the ion source to an ion source potential with respect to the terminal potential. Electrically conductive tubing electrically couples the gas box and ion source. 1. A terminal system for an ion implantation system , wherein the terminal system comprises:a terminal housing;an ion source assembly disposed within the terminal housing, wherein the ion source assembly is electrically isolated from the terminal housing; anda hydrogen generator disposed within the terminal housing, wherein the hydrogen generator is at the same electrical potential as the ion source assembly and electrically coupled thereto, and wherein the hydrogen generator is configured to produce hydrogen gas and supply said hydrogen gas to the ion source assembly.2. The terminal system of claim 1 , further comprising a gas box claim 1 , wherein the hydrogen generator is disposed within the gas box claim 1 , and wherein the gas box is electrically coupled to the ion source assembly.3. The terminal system of claim 2 , further comprising one or more electrical insulators claim 2 , wherein the one or more electrical insulators electrically isolate the ion source assembly and gas box from the terminal housing.4. The terminal system of ...

FOCUSED ION BEAM SYSTEMS AND METHODS OF OPERATION

A focused ion beam system is provided. The focused ion beam system includes a plasma generation chamber configured to contain a source gas that is radiated with microwaves to produce plasma. The plasma generation chamber includes a plasma confinement device configured to confine the plasma in radial and axial directions within the plasma generation chamber and to form a plasma meniscus at an extraction end of the plasma generation chamber. The focused ion beam system also includes a beam extraction chamber configured to extract a focused ion beam from the confined plasma and to focus the extracted focused ion beam on a workpiece. 1. A focused ion beam (FIB) system comprising: 'a multicusp plasma confinement device having a first set of magnets to confine the plasma in radial and axial directions within the plasma generation chamber and a second set of magnets to facilitate formation of a plasma meniscus at an extraction end of the plasma generation chamber; and', 'a plasma generation chamber configured to contain a source gas that is radiated with microwaves to produce plasma, wherein the plasma generation chamber comprises a plasma electrode configured to receive ions from the plasma genera ton chamber;', 'a first Einzel lens configured to extract a focused ion beam from the confined plasma;', 'second Einzel lens disposed adjacent to the beam limiting slit, configured to focus the extracted focused ion beam on a workpiece, wherein a beam spot formed on the workpiece by the focused ion beam has a diameter of about 10 microns to about 20 microns.', 'a beam limiting slit disposed adjacent to the first Einzel lens to reduce a size of the extracted focused ion beam; and'}], 'a beam extraction chamber comprises2. The system of claim 1 , wherein the plasma confinement device further comprises magnetic multipole ion reflecting walls having the first set of magnets with alternating polarity.35-. (canceled)6. The system of claim 1 , wherein the plasma electrode is held at ...

Temperature Controlled Ion Source

An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. For example, the ion source may have a tapered cylindrical end, which fits within a recessed cavity in the heat sink. Thermal expansion of the ion source causes the tapered cylindrical end to press against the recessed cavity in the heat sink. By proper selection of the temperature of the heat sink, the temperature and flow of coolant fluid through the heat sink, and the size of the gap between the heat sink and the ion source, the temperature of the ion source can be controlled. 1. An apparatus for generating an ion beam , comprising:an ion source comprising a plurality of chamber walls, wherein a tapered outward protrusion extends outward from one of the plurality of chamber walls;a heat sink, having a recessed cavity, wherein the tapered outward protrusion is disposed in the recessed cavity; anda set of shims disposed between the one of the plurality of chamber walls and the heat sink so as to set an initial gap between the tapered outward protrusion and the recessed cavity;wherein a final temperature of the ion source is determined based on a temperature of the heat sink and a width of the initial gap.2. The apparatus of claim 1 , wherein the tapered outward protrusion and the recessed cavity are complementary shapes.3. The apparatus of claim 1 , wherein the heat sink comprises channels claim 1 , and the temperature of the heat sink is determined based on a temperature of coolant fluid flowing through the channels.4. The apparatus of claim 1 , wherein the heat sink comprises channels claim 1 , and the temperature of the heat sink is determined based on a flow rate of coolant fluid flowing through the channels.5. The apparatus of claim 1 , wherein the final ...

ETCHING ALUMINUM NITRIDE OR ALUMINUM OXIDE TO GENERATE AN ALUMINUM ION BEAM

An ion implantation system, ion source, and method are provided, where an ion source is configured to ionize an aluminum-based ion source material and to form an ion beam and a by-product including a non-conducting material. An etchant gas mixture has a predetermined concentration of fluorine and a noble gas that is in fluid communication with the ion source. The predetermined concentration of fluorine is associated with a predetermined health safety level, such as approximately a 20% maximum concentration of fluorine. The etchant gas mixture can have a co-gas with a concentration less than approximately 5% of argon. The aluminum-based ion source material can be a ceramic member, such as a repeller shaft, a shield, or other member within the ion source.

FLUORINE BASED MOLECULAR CO-GAS WHEN RUNNING DIMETHYLALUMINUM CHLORIDE AS A SOURCE MATERIAL TO GENERATE AN ALUMINUM ION BEAM

An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.