X-RAY TUBE WITH VARIABLE ILLUSTRATION SPOT SIZE

MICRO LENS ARRAY AND MICRO DEFLECTOR ASSEMBLY FOR FLY'S EYE ELECTRON BEAN TUBES USING SILICON COMPONENTS

A combined fine focusing micro lens array and micro deflector assembly for use in electron beam tubes of the fly's eye type is provided. The assembly comprises a fine focusing micro lens array sub-assembly formed from a plurality of spaced-apart stacked parallel thin planar apertured silicon semiconductor lens plates each having an array of micro lens aperture openings. The lens plates each have highly conductive surfaces and are secured to glass rods for holding the plates in stacked parallel spacedapart relationship with the apertures axially aligned in parallel. A micro deflector assembly is adjacent to the micro lens array sub-assembly. A micro deflector element axially aligned with each respective fine focusing lens element serves for deflecting an electron beam passing through along orthogonal x-y directional axes of movement normal to the electron beam path. The deflector elements are comprised by two orthogonally arrayed sets of parallel spaced-apart deflector bars with alternate ...

SEXTUPOLE SYSTEM FOR THE CORRECTION OF SPHERICAL ABERRATION

A means is provided for compensating for spherical aberration in charged particle beam devices. The means includes a sextupole positioned between two focusing lenses.

Способ коррекции хроматической аберрации в системе из двух электронных линз

CHROMATISCH KOMPENSIERTE TEILCHENSTRAHLSÄULE

VORRICHTUNG ZUR ERZEUGUNG NICHTROTATIONSSYMMETRISCHER FELDER FUER KORPUSKULAROPTISCHE ABBILDUNGEN

ABERRATION-CORRECTED OPTICAL APPARATUS FOR CHARGED PARTICLES

Réseau de micro-lentilles et de micro-déflecteurs pour un tube à faisceau d'électrons.

L'INVENTION CONCERNE LES TUBES A FAISCEAU D'ELECTRONS. UN TUBE A FAISCEAU D'ELECTRONS COMPREND NOTAMMENT UN EMPILEMENT DE LAMES DE MICRO-LENTILLES16, 17, 18 ET DES MICRO-DEFLECTEURS12 QUI SONT PLACES EN AVAL ET QUI ASSURENT UNE MICRO-DEFLEXION DU FAISCEAU D'ELECTRONS QUI TRAVERSE CHAQUE MICRO-LENTILLE DES LAMES16, 17, 18, AFIN DE DIRIGER CE FAISCEAU VERS UN POINT PRECIS D'UNE ELECTRODE DE CIBLE13. LES LAMES16, 17, 18 SONT EN SILICIUM MONOCRISTALLIN ET LES OUVERTURES QUI FORMENT LES LENTILLES SONT REALISEES PAR PHOTOGRAVURE. APPLICATION AUX MEMOIRES A ACCES PAR FAISCEAU D'ELECTRONS.

EXPOSING STICK ILLUMINANCE CONTROL APPARATUS

PURPOSE: An exposing stick illuminance control apparatus is provided to automatically control the exposing stick illuminance control apparatus, and obviate over current by stopping a feedback using a protection circuit if direct current is flown over a permissible level. CONSTITUTION: The exposing stick illuminance control apparatus includes a rectifier(1), the first IGBT switch(2), the second switch(3), a HF transistor(4), reactor(5), a mercury lamps(6), an integrating circuit(8), a PWM controller(9), a protection circuit(10), an ultraviolet photo-sensor(11), and an automatic illuminance controller(13). The automatic illuminance controller(13) includes an operating section(13a), a setting section(13b), a controlling section(13c), and a display section(13d). The ultraviolet photo-sensor(11) is linked to an amplifier(7) which is linked to an input terminal of the second switch(3) and the integrating circuit(8), and a conversion switch(15) and an illuminance controlling volume(16) are linked ...

A CORRECTOR STRUCTURE AND A METHOD FOR CORRECTING ABERRATION OF AN ANNULAR FOCUSED CHARGED-PARTICLE BEAM

A corrector structure and a method for correcting aberration of an annular focused charged-particle beam, the corrector structure comprising a plurality of lenses configured for reducing second-order geometric aberration in the charged-particle beam.

КОМБИНИРОВАННАЯ МАГНИТОЭЛЕКТРИЧЕСКАЯ ЛИНЗА ДЛЯ ЭЛЕКТРОННО-ОПТИЧЕСКОГО ПРЕОБРАЗОВАТЕЛЯ

NETWORK OF MICRO-LENTILLES AND MICRO-DEFLECTEURS FOR A TUBE HAS ELECTRON BEAM

KATHODENANORDNUNG FUR EIN ELEKTRONENSTRAHLGERÄT MIT EINEM LINIENBRENNPUNKT

MICRO LENS ARRAY AND MICRO DEFLECTOR ASSEMBLY FOR FLY'S EYE ELECTRON BEAN TUBES USING SILICON COMPONENTS

CHROMATICALLY COMPENSATED PARTICLE-BEAM COLUMN

A particle-beam column comprising a needle-type ions source (1) such as a liquid metal ion source, one or more round lenses (2), and a plurality of interleaved quadrupole lenses (14, 16). Also an ion-beam column comprising a liquid alloy ion source (1), interleaved quadrupole lenses (14, 16), and a Wien velocity filter (22). Such columns produce a more finely focused beam than columns based only on electrostatic lenses, and allow increased lens apertures and larger beam currents.

ОПТИЧЕСКАЯ КОЛОНКА ДЛЯ ИЗЛУЧЕНИЯ ЧАСТИЦ

Изобретение относится к области тонкой артерии. Излучающая пучок частиц колонка включает игольчатый источник ионов, например источник ионов жидкого металла, одну или несколько круглых лизн и множество чередующихся квадрупольных линз. В качестве варианта описана излучающая пучок ионов колонка, включающая источник ионов жидкого сплава (1), чередующиеся квадрупольные линзы (14, 16) и фильтр скоростей Вина (22). Такие колонки излучают более остро сфокусированный пучок, чем колонки на основе лишь электростатических линз, и обеспечивают увеличенную апертуру линз и более сильные токи пучка. Техническим результатом является расширение области использования за счет обеспечения более сильных токов скоростями записи, за счет применения полностью ахроматических систем. 3 с. и 4 з.п.ф-лы, 7 ил.

Система для фокусировки заряженных частиц из четырех квадрупольных линз

MICRO LENS ARRAY AND MICRO DEFLECTOR ASSEMBLY FOR FLY'S EYE ELECTRON BEAM TUBES

Aberration free lens system for electron microscope

A system for reducing aberration effects in a charged particle beam. The system includes a source of charged particles, such as electrons or ions, and various building blocks for operating on the charged particle beam to generate a desired particle beam pattern. These building blocks can include at least one of a uniform magnetic field component and a uniform electrostatic field component arrangeable in different combinations, enabling coefficients of spherical and chromatic aberration to be canceled out thereby providing a charged particle beam having greatly diminished aberration.

OPTISCHES SYSTEM FUER GELADENE TEILCHEN MIT VORRICHTUNG ZUR KORREKTUR DER ABERRATION.

Device for reducing the divergence angle of an ion or electron source

The device for reducing the divergence angle for continuous or pulsed sources of charged particles contains coils and/or permanent magnets through which current flows in accordance with Fig. 1 and which possibly produce a magnetic field via ferromagnetic or ferrimagnetic pole shoes. During the formation of a free ion or electron, this magnetic field should be high, but should fall rapidly during or after its acceleration. This magnetic field drop then causes an electrostatic rotational field which reduces the transverse speed components of the beam of charged particles so that the originally divergent particle flight paths are largely parallel.

RÖNTGENRÖHRE MIT VARIABLER ABBILDUNGS-FLECKGRÖSSE

Micro deflector sub-assembly for use in electron beam tubes of the fly'eye type

A combined fine focusing micro lens array and micro deflector assembly for use in electron beam tubes of the fly's eye type is provided. The assembly comprises a fine focusing micro lens array sub-assembly formed from a plurality of spaced-apart stacked parallel thin planar apertured silicon semiconductor lens plates each having an array of micro lens aperture openings. The lens plates each have highly conductive surfaces and are secured to glass rods for holding the plates in stacked parallel spaced-apart relationship with the apertures axially aligned in parallel. A micro deflector assembly is adjacent to the micro lens array sub-assembly. A micro deflector element axially aligned with each respective fine focusing lens element serves for deflecting an electron beam passing through along orthogonal x-y directional axes of movement normal to the electron beam path. The deflector elements are comprised by two orthogonally arrayed sets of parallel spaced-apart deflector bars with alternate ...

COMPENSATION FOR SPHERICAL ABERRATION USING A SEXTUPALE

INDUCTIVE POWER TRANSMISSION PLATFORM

A power module for providing power inductively to electrical loads. The power module comprises a primary inductor for inductively coupling with at least one secondary inductor wired to the electrical load. The power module allows the location of the primary inductor to be adjusted to suit the user.

CATHODE ASSEMBLY FOR A LINE FOCUS ELECTRON BEAM DEVICE

An electron beam device (10) has a cathode (34) that generates a fan-shaped electron beam. A first focusing lens (44, 46, 48, 50) includes first (48) and second (50) plates on opposed sides of a filament. The edges of the plates closest to a positively charged anode (20) are arcuate, so that as individual electrons are accelerated normal to the edge of the charged plates, the beam (60) increases in length with departure from the filament. A second focusing lens includes third (44) and fourth (46) plates on opposed sides of the first focusing lens. Each of the third and fourth plates has an arcuate edge proximate to the positively charged anode. The plates of the first and second focusing lenses provide focusing in a widthwise direction, while defining the increase in the lengthwise direction. The curvature of the plates of the first focusing lens defines a common radius with the plates of the second focusing lens.

Vertical line width control ionographic system

The adjustment of the strobe and data voltages to the array gates that drive each of the modulators in an ionographic printing device, in particular the lowering of the data voltage level below the strobe voltage level for each of the array gates. The lower limit on the data voltage level is the voltage level where the generated ions are not shut off completely at the modulating electrode.

Device and method for optimizing diffusion section of electron beam

Provided is a device for optimizing a diffusion section of an electron beam, comprising two groups of permanent magnets, a magnetic field formed by the four magnetic poles extending the electron beam in a longitudinal direction, and compressing the electron beam in a transverse direction, so that the electron beam becomes an approximate ellipse; another magnetic field formed by the eight magnetic poles optimizing an edge of a dispersed electron-beam bunch into an approximate rectangle; by controlling the four longitudinal connection mechanisms so that the upper magnetic yoke and the lower magnetic yoke of the first group of permanent magnets move synchronously towards the center thereof thereby longitudinally compressing the electron beam in the shape of an approximate ellipse, and the upper magnetic yoke and the lower magnetic yoke of the second group of permanent magnets move synchronously towards the center thereof thereby longitudinally compressing the electron beam in the shape of ...

METHODS, MEDIUMS, AND SYSTEMS FOR IDENTIFYING TUNABLE DOMAINS FOR ION BEAM SHAPE MATCHING

Techniques for adjusting the shape of an ion beam are described. Characteristics of a desired beam shape may be defined. The ion beam generator may include beam shaping elements associated with tunable parameters that can be set in combination with each other. A search space for the possible combinations is defined. A set of exploratory points in the search space are measured and used to interpolate a large number of interpolated points based on a regression model. Interpolated points that are associated with low confidence values may be measured. Based on the measured and interpolated points, clusters of tunable parameter combinations may be identified for evaluation. The clusters are evaluated for stability and sensitivity, and one of the clusters is selected based on the evaluation. The ion beam generator may be configured based on the selected cluster.

Micro lens array and micro deflector assembly for fly's eye electron beam tubes

A combined fine focusing micro lens array and micro deflector assembly for use in electron beam tubes of the fly's eye type is provided. The assembly comprises a fine focusing micro lens array sub-assembly formed from a plurality of spaced-apart stacked parallel thin planar apertured silicon semiconductor lens plates each having an array of micro lens aperture openings. The lens plates each have highly conductive surfaces and are secured to glass rods for holding the plates in stacked parallel spaced-apart relationship with the apertures axially aligned in parallel. A micro deflector assembly is adjacent to the micro lens array sub-assembly. A micro deflector element axially aligned with each respective fine focusing lens element serves for deflecting an electron beam passing through along orthogonal x-y directional axes of movement normal to the electron beam path. The deflector elements are comprised by two orthogonally arrayed sets of parallel spaced-apart deflector bars with alternate ...

MICRO LENS ARRAY AND MICRO DEFLECTOR ASSEMBLY FOR FLY:S EYE ELECTRON BEAM TUBES

NETWORK OF MICRO-LENTILLES AND MICRO-DEFLECTEURS FOR A TUBE HAS ELECTRON BEAM

CHROMATICALLY COMPENSATED PARTICLE-BEAM COLUMN

MICRO DEFELCTOR SUB-ASSEMBLY FOR USE IN ELECTRON BEAM TUBES OF THE FLY'EYE TYPE

SEXTUPOLE SYSTEM FOR THE CORRECTION OF SPHERICAL ABERRATION

Method and apparatus for improved uniformity control with dynamic beam shaping

The present invention relates to a method and apparatus for varying the cross-sectional shape of an ion beam, as the ion beam is scanned over the surface of a workpiece, to generate a time-averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross-sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross-sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross-sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity.

Chromatically compensated particle-beam column

AXIS REGULATOR OF ELECTRON-BEAM UNIT

PURPOSE: To prevent the performance deterioration of a unit with contamination of a stop reduced by providing the stop with a larger diameter than the spread of the electron beam near the main surface of a reduction lens and by detecting an electron-beam current flowing into a board through scanning. CONSTITUTION: Stop 10 with a larger diameter than the spread of an electron beam is arranged near the main surface of reduction lens 3. Start signal (a) is outputted first from start/end circuit 15 to make pulse generator 16 output a pulse signal, a deflecting waveform is generated by scanning-signal generator 17, and the signal is supplied to correcting deflector 9 via amplifier 18, thereby deflecting the electron beam. As a result, the electron beam scans on stop 10. An electron-beam current flowing into stop 10 is led to amplifier 14 and then inputted to gates 20 and 21. Pulse generator 19, on the other hand, generates two kinds of gate signals; one is applied to gate 20, and the other is ...

CHARGED PARTICLE OPTICAL SYSTEMS

CHROMATICALLY COMPENSATED PARTICLE-BEAM COLUMN

A particle-beam column comprising a needle-type ions source (1) such as a liquid metal ion source, one or more round lenses (2), and a plurality of interleaved quadrupole lenses (14, 16). Also an ion-beam column comprising a liquid alloy ion source (1), interleaved quadrupole lenses (14, 16), and a Wien velocity filter (22). Such columns produce a more finely focused beam than columns based only on electrostatic lenses, and allow increased lens apertures and larger beam currents.

SEXTUPOLE SYSTEM FOR THE CORRECTION OF SPHERICAL ABERRATION

A means is provided for compensating for spherical aberration in charged particle beam devices. The means includes a sextupole (22) positioned between two focusing lenses (18, 24).

Electron gun, control method and control program thereof, and three-dimensional shaping apparatus

When an emission current is changed, a decrease in brightness of an electron beam is prevented. An electron gun includes a cathode that emits thermoelectrons, a Wehnelt electrode that focuses the thermoelectrons, a control electrode that extracts the thermoelectrons from a distal end of said cathode, an anode that accelerates the thermoelectrons and irradiates a powder with the thermoelectrons as an electron beam, and an optimum condition collection controller that changes at least one of a bias voltage to be applied to the Wehnelt electrode and a control electrode voltage to be applied to the control electrode, and decides a combination of the bias voltage and the control electrode voltage at which the brightness of the electron beam reaches a peak.

SEXTUPOLE SYSTEM FOR THE CORRECTION OF SPHERICAL ABERRATION

Multi-layer corrugated ceramic structure

Non-axisymmetric charged-particle beam system

The charged-particle beam system includes a non-axisymmetric diode (2) that forms a non-axisymmetric beam (8) having an elliptic cross-section. A focusing element utilizes a magnetic field for focusing and transporting the non-axisymmetric beam, wherein the non-axisymmetric beam is approximately matched with the channel of the focusing element.

VERFAHREN ZUR REGELUNG DER VERDAMPFUNGSRATE EINES ELEKTRONENSTRAHLVERDAMPFERS

Compensation for spherical aberration using a sextupole

A means is provided for compensating for spherical aberration in charged particle beam devices. The means includes a sextupole positioned between two focusing lenses.

CHARGED PARTICLE OPTICAL SYSTEM, DRAWING APPARATUS, AND METHOD OF MANUFACTURING ARTICLE

The present invention provides a charged particle optical system which emits a charged particle beam, the system including an electrostatic lens, and a grid electrode opposed to the electrostatic lens along an optical axis of the electrostatic lens, and configured to form an electrostatic field in cooperation with the electrostatic lens, wherein the grid electrode is configured such that an electrode surface, opposed to the electrostatic lens, of the grid electrode has a distance, from the electrostatic lens in a direction of the optical axis, which varies with a position in the electrode surface. 1. A charged particle optical system which emits a charged particle beam , the system comprising:an electrostatic lens; anda grid electrode opposed to the electrostatic lens along an optical axis of the electrostatic lens, and configured to form an electrostatic field in cooperation with the electrostatic lens,wherein the grid electrode is configured such that an electrode surface, opposed to the electrostatic lens, of the grid electrode has a distance, from the electrostatic lens in a direction of the optical axis, which varies with a position in the electrode surface.2. The system according to claim 1 , wherein the electrode surface has such a shape that a spherical aberration of the electrostatic lens is smaller than that in a case where the electrode surface has the distance which does not vary with a position in the electrode surface.3. The system according to claim 1 , wherein a component claim 1 , parallel to the optical axis claim 1 , of an electrostatic force applied to the charged particle beam from the electrostatic field is orientated to the electrostatic lens from the electrode surface claim 1 , and the electrode surface has a shape concave toward the electrostatic lens.4. The system according to claim 1 , wherein a component claim 1 , parallel to the optical axis claim 1 , of an electrostatic force applied to the charged particle beam from the electrostatic ...

Variable-focus magnetostatic lens

Variable-focus solenoidal lenses for charged particle beams with integrated emittance filtering are disclosed. The emittance may be controlled via selection of collimating irises. The focal length may be changed by altering the spacing between two permanent ring magnets.

Charged particle optical systems having therein means for correcting aberrations

Abbildungssystem für Strahlung geladener Teilchen mit Spiegelkorrektor

CHROMATISCH KOMPENSIERTE TEILCHENSTRAHLSÄULE

Vertical line width control ionographic system

The adjustment of the strobe and data voltages to the array gates that drive each of the modulators in an ionographic printing device, in particular the lowering of the data voltage level below the strobe voltage level for each of the array gates. The lower limit on the data voltage level is the voltage level where the generated ions are not shut off completely at the modulating electrode.

Method and apparatus for correcting high-order abberations in particle beams

A technique for correcting spherical and other aberrations in a particle beam. Spherical aberration is caused by variations in beam behavior dependent on the cube of the radius or radial position with respect to the beam axis. To correct for such aberration, the beam is passed through multiple compensation electric field arrays, each of which has multiple rows of parallel wires stretched transversely across the beam path, the rows being biased with separate voltages to provide an electric field that varies in proportion to the cube of the distance from the central row of the array. The multiple arrays provide a cylindrically symmetrical electric field, and are oriented at a uniform angular spacing, which, for spherical aberration, is 120 degrees.

MICRO LENS ARRAY AND MICRO DEFLECTOR ASSEMBLY FOR FLY'S EYE ELECTRON BEAM TUBES

NON-AXISYMMETRIC CHARGED-PARTICLE BEAM SYSTEM

The charged-particle beam system includes a non-axisymmetric diode forms a non-axisymmetric beam having an elliptic cross-section. A focusing element utilizes a magnetic field for focusing and transporting the non-axisymmetric beam, wherein the non- axisymmetric beam is approximately matched with the channel of the focusing element. © KIPO & WIPO 2007 ...

Aberrations-korrigierter optischer Apparat für geladene Teilchen

Chromatically compensated particle-beam column

X-RAY TUBE PROVIDING VARIABLE IMAGING SPOT SIZE

편향기 렌즈의 중심 축으로부터 둘 모두 오프셋된 하전 입자 소스와 하전 입자 분석기 사이의 2-단 하전 입자 편향기 렌즈에 의한 가스 분석을 위한 질량 분석법

... 장치, 방법들 및 시스템들은 분석기의 출력 스펙트럼의 기선 오프셋을 변경하기 위하여 그리고 하전 입자 소스로부터 분석기로의 시선을 방해하도록 제공된다. 하전 입자들의 공급은 하전 입자 소스 및 분석기에 대해 위치되는 편향기 렌즈의 중공 본체를 통해 보내진다. 편향기 렌즈를 통한 바람직한 흐름 경로에 따른 흐름 경로는 편향기 렌즈의 중심 세로 축에 대해 평행한 방향에서 검출기로부터 소스로의 시선을 방해하면서 소스로부터 검출기로의 이온들의 통과를 허용한다.

Charged-particle-beam (CPB) optical systems, and CPB Microlithography systems comprising same, that cancel external magnetic fields

Charged-particle-beam (CPB) optical systems are disclosed in which external magnetic fields are effectively canceled. Such systems are especially suitable for use in CPB microlithography systems in which extreme isolation from external magnetic fields is required in each of the lens columns of the system. In an embodiment, four magnetic-field sensors are situated downstream of the substrate stage of the CPB microlithography system. The sensors are located in a plane perpendicular to the optical axis and situated equi-angularly relative to each other about the optical axis. Each sensor can be configured as, e.g., a Hall-effect sensor, a magnetic-resistance sensor, or a search coil (the latter for detecting AC magnetic fields). Most desirably, the sensors are incorporated into a single sensor capable of detecting magnetic fields in each of the X, Y, and Z directions. The sensors can be used in conjunction with an active-canceller.

X-ray tube providing variable imaging spot size

A variable spot size x-ray tube comprises a cathode having an electron emitting surface providing an electron beam that travels essentially along the tube axis of symmetry to an anode. The anode, spaced from the cathode, includes a target, the front surface of which is disposed at an oblique angle with respect to the axis of symmetry. The potential of the anode is generally positive with respect to that of the cathode. The cathode is heated to a temperature at which electrons are emitted by the thermionic emission process. Current from the cathode can be controlled by varying the cathode temperature if the cathode is operated in the temperature limited region. The incident electron beam forms a spot on the target surface whereupon x-rays are produced in response to impingement of the electron beam on the target. The x-rays propagate outwardly from the target spot through a vacuum window to form a beam of x-radiation outside the x-ray tube. An aperture grid is disposed between the cathode ...

FIELD EMISSION DEVICE HAVING BULK RESISTIVE SPACER

A field emission display (100) includes a cathode plate (102) having a plurality of electron emitters (124), an anode plate (104) opposing the cathode plate (102), and a bulk- resistive spacer (108) extending between the anode plate (104) and the cathode plate (102). The bulk-resistive spacer (108) is made from an electrically conductive material. The resistivity of the electrically conductive material is selected to remove impinging charges while preventing excessive power loss due to electrical current through the bulk-resistive spacer (108) from the anode plate (104) to the cathode plate (102). © KIPO & WIPO 2007 ...

NON-AXISYMMETRIC CHARGED-PARTICLE BEAM SYSTEM

The charged-particle beam system includes a non-axisymmetric diode (2) that forms a non-axisymmetric beam (8) having an elliptic cross-section. A focusing element utilizes a magnetic field for focusing and transporting the non-axisymmetric beam (8), wherein the non-axisymmetric beam (8) is approximately matched with the channel of the focusing element.

FLAT CRT

PURPOSE: A flat CRT(cathode ray tube) is provided to improve resolution of image through landing electronic beam on a fluorescent film while preventing enlargement of size of beam. CONSTITUTION: By applying voltage to a line cathode, electronic beam is emitted. The beam is concentrated by a concentrate electrode(26) and an auxiliary concentrate electrode(30). Herein, a voltage fallen by a resistance(R) is applied to the auxiliary concentrate electrode to form a concentrate lens between electronic beam passing holes(26a,31). The concentrated beam is deflected by horizontal/vertical deflect plates(25,24) and landed on a fluorescent film(11). Herein, sizes of the electronic beams on the film are reduced through concentration. COPYRIGHT 2001 KIPO ...

KATHODENANORDNUNG FUR EIN ELEKTRONENSTRAHLGERÄT MIT EINEM LINIENBRENNPUNKT

EINRICHTUNG ZUR FUEHRUNG GELADENER TEILCHENSTROEME

Method for blacking mask frame of printing mask

X-RAY TUBE PROVIDING VARIABLE IMAGING SPOT SIZE

Tube à rayons X à spot image de taille variable comprenant une cathode dont la surface émettrice d'électrons fournit un faisceau d'électrons qui se propage vers l'anode essentiellement le long de l'axe de symétrie du tube. L'anode, séparée de la cathode, comporte une cible dont la surface frontale forme un angle oblique par rapport à l'axe de symétrie. Le potentiel de l'anode est généralement positif par rapport à celui de la cathode. La cathode est chauffée à une température à laquelle les électrons sont émis par émission thermoélectronique. On peut régler le courant de la cathode en faisant varier la température de la cathode si celle-ci fonctionne dans les limites de température. Le faisceau d'électrons incident forme un spot sur la surface de la cible (38), les rayons X étant ainsi produits en réaction à l'impact du faisceau d'électrons sur la cible. Les rayons X se propagent vers l'extérieur à partir du spot cible, à travers une fenêtre à vide (42), pour former un faisceau de rayons ...

ION BEAM CONTROL APPARATUS AND METHOD

Provided are an ion beam control apparatus and a control method for controlling an ion beam energy expansion level and an ion beam size in a radial direction. An ion beam control apparatus Sa is provided with an ion beam generating unit 2, and an ion beam control unit 1a in which a generated ion beam (IB) is input and controlled to be output with the prescribed level of energy expansion and the prescribed diameter in the radial direction. In the ion beam control unit 1a, phase rotation by a radio frequency electric field that increases existing probability with the prescribed level of energy is at least used.

FIELD EMISSION DEVICE HAVING BULK RESISTIVE SPACER

SEXTUPOLE SYSTEM FOR THE CORRECTION OF SPHERICAL ABERRATION

A means is provided for compensating for spherical aberration in charged particle beam devices. The means includes a sextupole (22) positioned between two focusing lenses (18, 24).

KOMBINIERTE, FEINFOKUSSIERENDE, REGELMAESSIGE MIKROLINSENANORDNUNG UND MIKRODEFLEKTORANORDNUNG FUER FLIEGENAUGENARTIGE ELEKTRONENSTRAHLROEHREN UND VERFAHREN ZU DEREN HERSTELLUNG

Ion source

METHOD FOR FORMING SEAL OF FLAT DISPLAY DEVICE

PURPOSE: A method for forming a seal of a flat display device is provided to form the seal uniformly on a substrate by using a sealing tape. CONSTITUTION: A seal material in a tape form is fabricated to attach the seal uniformly in a process of attaching two substrates together. A method for forming a seal of a flat display device includes: a step of forming a thin film with a material in a partial region on a substrate(100); a step of attaching a seal tape(200) on the outer block of the region where the thin film is formed; and a step of attaching a second substrate to the substrate where the seal tape is attached. When attaching two substrates together, the density of the seal tape become uniformly by a pressure applied to the seal tape. COPYRIGHT 2000 KIPO ...

METHOD AND DEVICE FOR MANIPULATING PARTICLE BEAM

A method of manipulating an electron beam is disclosed. The method comprises transmitting the beam through a phase mask selected to spatially modulate a phase of the beam over a cross-section thereof.

Bunch length compression method for free electron lasers to avoid parasitic compressions

A method of bunch length compression method for a free electron laser (FEL) that avoids parasitic compressions by 1) applying acceleration on the falling portion of the RF waveform, 2) compressing using a positive momentum compaction (R56>0), and 3) compensating for aberration by using nonlinear magnets in the compressor beam line.

Vorrichtung zur Korrektur der sphaerischen Aberration einer magnetischen Linse

SEXTUPOLE SYSTEM FOR THE CORRECTION OF SPHERICAL ABERRATION

Device for enhancing uniformity of electron beam current

The invention relates to a device for enhancing uniformity of electron beam current, and belongs to the technical field of space application. The device for enhancing the uniformity of the electron beam current is an electron scattering net, the electron scattering net is arranged at a position of 30 to 70 millimeters far from the emission port of equipment for generating scattered low-energy electron current, the diameter of pores in the electron scattering net is 0.1 to 0.5 millimeter, and the electron scattering net is made of metal material; and when the equipment of the scattered low-energy electron current is an electronic gun, a filament in the electronic gun is fixed on an asbestos seat through a holder. By using the electron scattering net, the scattering area of the electron beam current emitted by the equipment of the scattered low-energy electron current is enlarged, and the uniformity of the electron beam current is enhanced; and the filament of the electronic gun fixed by ...

Method and device for manipulating particle beam

OPTIMIZED MATCHING OF BEAM EMITTANCE AND COLLIMATION SYSTEM TO MAXIMIZE TRANSMISSION THROUGH BEAMLINE

The present invention provides a method to design a beam collimation system for cyclotron-based particle therapy beamline. This method provides the specifications of two asymmetric collimators, which allow transporting larger emittance through beamline while having symmetric emittance in both planes but with different beam sizes and different divergences in both planes. The first asymmetric collimator selects an asymmetric beam size and the second collimator selects an asymmetric beam divergence in both planes. The aperture of the second collimator depends on the aperture of the first collimator. This arrangement allows transporting larger emittance through beamline for lower energy, with the goal of achieving higher beam current transmission compared to the prior art. Preferably, this collimator system is integrated after the energy degrader but it is possible to use a similar collimation system at any location along the beamline. These collimators can be multileaf or fixed aperture collimators ...

Non-axisymmetric charged-particle beam system

Abbildungssystem für Strahlung geladener Teilchen mit Spiegelkorrektor

OPTISCHES SYSTEM FUER GELADENE TEILCHEN MIT VORRICHTUNG ZUR KORREKTUR DER ABERRATION.

Ion source

Micro lens array and micro deflector assembly for fly's eye electron beam tubes using silicon components and techniques of fabrication and assembly

A combined fine focusing micro lens array and micro deflector assembly for use in electron beam tubes of the fly's eye type is provided. The assembly comprises a fine focusing micro lens array sub-assembly formed from a plurality of spaced-apart stacked parallel thin planar apertured silicon semiconductor lens plates each having an array of micro lens aperture openings. The lens plates each have highly conductive surfaces and are secured to glass rods for holding the plates in stacked parallel spaced-apart relationship with the apertures axially aligned in parallel. A micro deflector assembly is adjacent to the micro lens array sub-assembly. A micro deflector element axially aligned with each respective fine focusing lens element serves for deflecting an electron beam passing through along orthogonal x-y directional axes of movement normal to the electron beam path. The deflector elements are comprised by two orthogonally arrayed sets of parallel spaced-apart deflector bars with alternate ...

SHAPING OFFSET ADJUSTMENT METHOD AND CHARGED PARTICLE BEAM DRAWING APPARATUS

A shaping offset adjustment method, comprising: checking a reference point formed by an overlap of first and second shaping apertures included in a charged particle beam drawing apparatus; changing a position of the first shaping aperture by deflecting a charged particle beam so that an overlap area of the first and second shaping apertures has a predetermined shot size; measuring a current value of the charged particle beam passing through the overlap area; performing fitting on a relationship between the shot size and the corresponding current value using a cubic polynomial to calculate coefficients of the cubic polynomial achieving best fit; and correcting a shaping offset amount using the calculated coefficients of the cubic polynomial. 1. A shaping offset adjustment method , comprising:checking a reference point formed by an overlap of first and second shaping apertures included in a charged particle beam drawing apparatus;changing a position of the first shaping aperture by deflecting a charged particle beam so that an overlap area of the first and second shaping apertures has a predetermined shot size;measuring a current value of the charged particle beam with the predetermined shot size, the charged particle beam passing through the overlap area;performing fitting on a relationship between the shot size and the corresponding current value by using a cubic polynomial to thereby calculate coefficients of the cubic polynomial achieving best fit; andcorrecting a shaping offset amount using the calculated coefficients of the cubic polynomial.2. The shaping offset adjustment method according to claim 1 , wherein the position of the first shaping aperture is changed so that the predetermined shot size gradually increases.3. The shaping offset adjustment method according to claim 1 , the step of changing the position of the first shaping aperture and the step of measuring the current value of the charged particle beam passing through the overlap area of the first ...

Aberration Correction Device and Charged Particle Beam Device Employing Same

To provide an aberration correction device and a charged particle beam device employing same that are jointly usable with a tunneling electron microscope (TEM) and a scanning tunneling electron microscope (SEM), an aberration correction device () comprises, between a TEM objective lens () and an STEM objective lens (): a transfer lens group (), for transferring a coma-free surface () of the TEM objective lens () to a multipolar lens (); a transfer lens group () for transferring the coma-free surface of the TEM objective lens to a multipolar lens (); and a transfer lens () for correcting fifth-order spherical aberration of the STEM objective lens (). 1. An aberration correction device comprising:a first multipole lens disposed adjacent to an illumination lens;a second multipole lens disposed adjacent to a projection lens;a plurality of first transfer lenses disposed between the first and second multipole lenses and configured to transfer, to the second multipole lens, a coma-free condition of a first objective lens disposed adjacent to the illumination lens;a plurality of second transfer lenses disposed so as to be closer to the illumination lens than the first multipole lens and configured to transfer the coma-free condition of the first objective lens to the first multipole lens; anda third transfer lens disposed so as to be closer to the projection lens than the second multipole lens and configured to correct a fifth-order spherical aberration of a second objective lens disposed adjacent to the projection lens.2. A charged particle beam device comprising:a charged particle source;an illumination lens configured to adjust an amount of a beam of charged particles emitted by the charged particle source;a projection lens configured to project the charged particles that have passed through a specimen, onto detection means;a first objective lens;an aberration correction device; anda second objective lens,wherein the first objective lens, the aberration correction device ...

CHARGED PARTICLE OPTICAL EQUIPMENT AND METHOD FOR MEASURING LENS ABERRATION

Beam scanning for obtaining a scanned image is performed by an aberration corrector, which is an aberration measured lens, and a scanning coil disposed above an objective lens, instead of a scanning coil ordinarily placed on the objective lens. Thus, distortion with an aberration of an aberration measured lens is scanned on the surface of a sample, and then a scanned image is formed from a scattered electron beam, a transmission electron beam, or a reflected/secondary electron beam that is generated by the scan, achieving a scanning aberration information pattern equivalent to a conventional Ronchigram. Such means is a feature of the present invention. 1. A method for measuring a lens aberration in a charged particle optical device including means that focuses an electron beam for two-dimensional scanning on a sample ,the charged particle optical device comprising:an electron source that emits an electron beam; sample mounting means for mounting the sample; electromagnetic lenses disposed between the electron source and the sample mounting part;electron beam scanning means that is provided on an electron-optical upstream side of aberration measured lenses of the electromagnetic lenses, and scans and deflect the electron beam;beam diaphragm means that is provided upstream of the electron beam scanning means and focuses the electron beam to a predetermined beam diameter;detecting means that detects an electron signal induced from the sample by the electron beam impinging onto the sample; andcontrol means that controls the electron source, the electromagnetic lenses, the electron beam scanning means, and the detecting means,wherein the electron beam scanning means upstream of the measured lenses scans the electron beam from the electron source so as to two-dimensionally scan a beam probe on a surface of the sample, the beam probe being formed by the electromagnetic lenses,the detecting means detects at least one of signals including a secondary electron, a reflected ...

MULTIPOLE AND CHARGED PARTICLE RADIATION APPARATUS USING THE SAME

In order to realize a multiple assembled easily with high accuracy, a multipole having assembly accuracy within 10 micrometer and within several seconds of angle is achieved by fixing multipole elements by being guided by grooves provided on an inner side of a cylindrical housing to form the multipole. 1. A multipole comprising a plurality of multipole elements , multipole members including the plurality of multipole elements integrally with a rod , and a cylindrical housing having an opening at a center portion therethrough so as to allow a charged particle radiation to pass therethrough , wherein the cylindrical housing includes a plurality of grooves parallel to a direction of an optical axis on a circumference of an inner wall of the opening , and the multipole members are arranged so as to be fixed by being fitted into the grooves.2. The multipole according to claim 1 , wherein the plurality of multipole elements are formed to have a multistage formed on the rod at predetermined intervals so that distal end portions thereof are oriented in the same direction claim 1 , the cylindrical housing is provided with the grooves at both end portions of the inner wall of the opening claim 1 , the thickness of the inner wall at an intermediate portion of the cylindrical housing is formed to be thinner than the thickness of the inner wall of the both end portions claim 1 , the multipole members are fixed to the cylindrical housing between the grooves and the multipole elements at the both end portions from among the multistage multipole elements formed on the rod.3. The multipole according to claim 2 , wherein the multipole elements are formed by using a soft magnetic metal material or a soft magnetic metal material and a no-magnetic metal material claim 2 , and the multipole members fixedly arrange the plurality of multipole elements at predetermined intervals parallel to the optical axis with insulating members interposed therebetween.4. The multipole according to claim ...

Method of Investigating and Correcting Aberrations in a Charged-Particle Lens System

A system of investigating aberrations in a charged-particle lens system, which lens system has an object space comprising an object plane and an image space comprising an image plane, includes: 1. A method of investigating aberrations in a charged-particle lens system , the lens system having an object space comprising an object plane and an image space comprising an image plane , whereby an object placed on said object plane can be imaged by the lens system onto said image plane , the lens system further having an entrance pupil , the method comprising:selecting a fixed pivot point on said object plane;directing a charged-particle beam through said pivot point, entrance pupil and lens system and onto said image plane, said beam having a relatively small cross-sectional area relative to the area of the entrance pupil;changing the orientation of said beam through said pivot point, so as to trace out an entrance figure on said entrance pupil and a corresponding image figure on said image plane;registering said image figure;repeating this procedure at a series of different focus settings of the lens system, thus acquiring a set of registered image figures at different focus settings; andanalyzing said set so as to derive lens aberrations therefrom.2. The method according to claim 1 , wherein said analyzing step comprises performing a mathematical fit of said set to a collection of theoretical image figures predicted using a mathematical model.3. The method according to claim 2 , wherein said mathematical model describes wavefront deformation by the lens system in terms of localized alterations in phase and phase gradient per point on a wavefront claim 2 , using a two-dimensional function.4. The method according to claim 3 , wherein said two-dimensional function is expanded as a Taylor Series claim 3 , whose coefficients yield information on the magnitude of various lens aberrations.5. The method according to claim 1 , wherein said series of different focus settings ...

Method and System for Edge-of-Wafer Inspection and Review

An electron-optical system for inspecting or reviewing an edge portion of a sample includes an electron beam source configured to generate one or more electron beams, a sample stage configured to secure the sample and an electron-optical column including a set of electron-optical elements configured to direct at least a portion of the one or more electron beams onto an edge portion of the sample. The system also includes a sample position reference device disposed about the sample and a guard ring device disposed between the edge of the sample and the sample position reference device to compensate for one or more fringe fields. One or more characteristics of the guard ring device are adjustable. The system also includes a detector assembly configured to detect electrons emanating from the surface of the sample. 1. A system comprising:an electron beam source configured to generate one or more electron beams;a sample stage configured to secure a sample;an electron-optical column including a set of electron-optical elements configured to direct at least a portion of the one or more electron beams onto an edge portion of the sample;a detector assembly configured to detect electrons emanating from the sample; anda controller, wherein the controller is communicatively coupled to one or more portions of at least one of the electron beam source, the set of electron-optical elements of the electron optical column or the stage, wherein the controller is configured to:receive one or more parameters representative of one or more characteristics of the one or more electron beams at an edge portion of the sample;generate a look-up table for compensating for one or more fringe fields within the electron-optical system; andadjust one or more characteristics of the electron-optical system based on the generated look-up table.2. The system of claim 2 , wherein the controller is communicatively coupled to a stigmator of the electron optical column claim 2 , wherein the controller is ...

METHOD FOR AUTOMATIC CORRECTION OF ASTIGMATISM

The method is for automatic astigmatism correction of a lens system. A first image is provided that is not in focus at a first stigmator setting of a set of lenses. A calculating device calculates a corresponding first Fourier spectrum image. A distribution and direction of pixels of the Fourier spectrum image are determined by calculating a first vector and a second vector. The first vector is compared with the second vector. The lens system is changed from a first stigmator setting to a second stigmator setting to provide a second image. A corresponding Fourier spectrum image is calculated. The distribution and direction of pixels of the second Fourier spectrum image is determined by calculating a third vector and a fourth vector. The third vector is compared to the fourth vector. The image that has the lowest vector ratio is selected. 1. A method for automatic astigmatism correction of a lens system , comprising ,providing a first image of a view not being in focus at a first stigmator setting of a lens,based on the first image at the first stigmator setting,a calculating device calculating a first Fourier spectrum image,determining a distribution and directions of intensities in the image by calculating a first vector and a second vector,comparing the first vector with the second vector, changing the lens from the first stigmator setting to a second stigmator setting to provide a second image of the view not being in focus, the second image at the second stigmator setting being of the same view as the first image of the view at the first stigmator setting,the calculating device, calculating a second Fourier spectrum image based on the second image at the second stigmator setting,determining the distribution and directions of intensities in the second Fourier spectra image by calculating a third vector and a fourth vector,comparing the third vector with the fourth vector,when the first vector is more similar to the second vector than the third vector is to the ...

Particle-optical corrector which is free from axial aberrations of sixth order and electron microscope with corrector

A corrector has a strength of a central hexapole field (Ψ) which is selected such that the threefold axial astigmatism (A) vanishes and the strengths of two equal outer hexapole fields (Ψ) are selected such that the overall corrector () does not have a sixfold axial astigmatism (As). The length (L) of the central multipole element () in relation to the lengths (L) of the multipole elements ( and ) is chosen such that the axial three-lobed aberration of sixth order (D) vanishes. A separation between the outer multipole elements ( and ) and round lenses (″) further spaced apart from a symmetry plane () of the corrector corresponds to the focal length (f′) of those round lenses (″) plus an additional separation (Δz) which is chosen such that the axial three-lobed aberration of fourth order (D) vanishes for the given lengths L and L′. 118.-. (canceled)19. A particle-optical corrector for correcting spherical aberrations of an electron microscope , thereby preventing a threefold axial astigmatism , an axial three-lobed aberration of fourth order and a sixfold axial astigmatism , wherein the corrector comprises:a first outer multipole element of length L′ for generating a first hexapole field;a second central multipole element of length L for generating a second hexapole field in a symmetry plane of the corrector;a third outer multipole element of length L′ for generating a third hexapole field, wherein said first outer multipole element and said third outer multipole element are identical and said first and said third hexapole fields have identical strengths, wherein a strength of said second hexapole field is selected with respect to strengths of said first and said third hexapole fields such that the threefold axial astigmatism vanishes, said strengths of said first and said third hexapole fields thereby being selected such that the corrector does not have the sixfold axial astigmatism;a first round lens doublet having a first doublet first round lens and a first ...

CHARGED PARTICLE BEAM APPARATUS

In recent years, a range of users for a charged particle beam apparatus such as a scanning electron microscope has been broadened. All users want to learn a manual adjustment technology, but it is very difficult to adjust all parameters for observation to have an appropriate value. Therefore, a beginner is unlikely to sufficiently show a performance of an apparatus. This disclosure aims to provide the charged particle beam apparatus including a parameter adjustment practice function for allowing any user to easily learn the manual adjustment technology. 1. A charged particle beam apparatus which requires a focus adjustment and a stigma adjustment when observing a sample , comprising:a lens system that focuses a charged particle beam on the sample;an X-stigmator that adjusts an X-stigma;Y-stigmator that adjusts a Y-stigma;a control unit that controls the focus adjustment of the objective lens, an X-stigma adjustment of the X-stigmator and a Y-stigma adjustment of the Y-stigmator;a storage unit that stores a practice-purpose image corresponding to each group of the focus adjustment, the X-stigma adjustment and the Y-stigma adjustment which are determined in advance;an operation unit that sets the focus adjustment, the X-stigma adjustment and the Y-stigma adjustment according to a user's operation; anda display unit that displays the practice-purpose image read out from the storage unit corresponding to the group of the focus adjustment, the X-stigma adjustment and the Y-stigma adjustment which are set by the operation unit.2. The charged particle beam apparatus according to claim 1 ,wherein with regard to the focus adjustment, the X-stigma adjustment and the Y-stigma adjustment, a sequence of the adjustments is designated.3. The charged particle beam apparatus according to claim 2 ,wherein the sequence of the adjustments is designated such that the focus adjustment is performed prior to the X-stigma adjustment and the Y-stigma adjustment.4. The charged particle beam ...

CHROMATIC ABERRATION CORRECTOR AND ELECTRON MICROSCOPE

The chromatic aberration corrector () has a first multipole element () for producing a first electromagnetic field and a second multipole element () for producing a second electromagnetic field. The first multipole element () first, second, and third portions () arranged along an optical axis (OA) having a thickness and producing a quadrupole field in which an electric quadrupole field and a magnetic quadrupole field are superimposed. In the first and third portions (), the electric quadrupole field is set stronger than the magnetic quadrupole field. In the second portion (), the magnetic quadrupole field is set stronger than the electric quadrupole field. The second portion () produces a two-fold astigmatism component that is opposite in sign to two-fold astigmatism components produced by the first portion () and third portion (). 1. A chromatic aberration corrector for use with an electron microscope , said chromatic aberration corrector comprising:a first multipole element for producing a first electromagnetic field; anda second multipole element for producing a second electromagnetic field,wherein said first multipole element has a first portion, a second portion, and a third portion arranged along an optical axis;wherein each of the first portion, second portion, and third portion has a thickness in the direction of travel of an electron beam and produces a quadrupole field in which an electric quadrupole field and a magnetic quadrupole field are superimposed;wherein in said first portion, the electric quadrupole field is set stronger than the magnetic quadrupole field;wherein in said second portion, the magnetic quadrupole field is set stronger than the electric quadrupole field;wherein in said third portion, the electric quadrupole field is set stronger than the magnetic quadrupole field;wherein said second portion produces a two-fold astigmatism component that is opposite in sign to two-fold astigmatism components produced by the first and third portions; ...

A CORRECTOR STRUCTURE AND A METHOD FOR CORRECTING ABERRATION OF AN ANNULAR FOCUSED CHARGED-PARTICLE BEAM

A corrector structure and a method for correcting aberration of an annular focused charged-particle beam, the corrector structure comprising a plurality of lenses configured for reducing second-order geometric aberration in the charged-particle beam. 1. A corrector structure for correcting aberration of an annular focused charged-particle beam , the corrector structure comprising a plurality of lenses configured for reducing second-order geometric aberration in the charged-particle beam.2. The corrector structure of claim 1 , wherein the lenses comprise core-lenses.3. The corrector structure of claim 1 , wherein the lenses comprise at least one converging lens and at least one diverging lens.4. The corrector structure of claim 1 , wherein for a charged-particle beam converging from a source in a direction towards an objective lens claim 1 , the corrector structure comprises two or more lenses.5. The corrector structure of claim 1 , wherein for a charged-particle beam diverging from a source in a direction towards an objective lens claim 1 , the corrector structure comprises three or more lenses.6. The corrector structure of wherein the lenses comprise two converging lenses and one diverging lens.7. The corrector structure of claim 6 , wherein the diverging lens is disposed between the two converging lenses along a path for the charged-particle beam.8. The corrector structure of claim 1 , wherein the corrector structure is configured for disposal between an objective lens and an annular aperture along a path for the charged-particle beam.9. The corrector structure of claim 1 , wherein the lenses comprise electric field claim 1 , magnetic field and/or combined electric/magnetic field lenses.10. A method for correcting aberration of an annular focused charged-particle beam claim 1 , the method comprising:providing a plurality of lenses; andconfiguring the lenses for reducing second-order geometric aberration in the charged-particle beam.11. The method of claim 10 , ...

Aligning a featureless thin film in a tem

When preparing a Hole-Free Phase Plates (HFPP) a preferably featureless thin film should be placed with high accuracy in the diffraction plane of the TEM, or a plane conjugate to it. Two methods for accurately placing the thin film in said plane are described. One method uses a Ronchigram of the thin film while the TEM is in imaging mode, and the magnification of the Ronchigram is tuned so that the magnification in the middle of the Ronchigram is infinite. The second method uses electrons scattered by the thin film while the TEM is in diffraction mode. When the thin film does not coincide with the diffraction plane, electrons scattered by the thin film seem to originate from another location than the cross-over of the zero beam. This is observed as a halo. The absence of the halo is proof that the thin film coincides with the diffraction plane.

Charged Particle Beam Device and Spherical Aberration Correction Method

In general, in a multipole lens of an aberration corrector of a charged particle beam device, there is only one condition that can be set where both a spherical aberration correction condition and magnetic saturation are satisfied. Therefore, a plurality of acceleration voltages cannot be handled. Consequently, the present invention provides a spherical aberration corrector that satisfies the magnetic saturation state for a plurality of aberration correction conditions by selectively magnetizing a plurality of pole groups of the multipole lens according to the changes in the objective lens magnetization current. 1. A charged particle beam device comprising:a charged particle beam source;a charged particle optical system that irradiates a specimen with charged particle beams which are formed of charged particles released from the charged particle source;an objective lens that focuses the charged particle beams;a spherical aberration corrector that satisfies a magnetically saturated state in multiple aberration correction conditions by selectively magnetizing multiple sets of pole groups of a multipole lens according to a change in magnetization current of the objective lens; anda control unit that controls the charged particle optical system and the spherical aberration corrector.2. The charged particle beam device according to claim 1 ,wherein the multiple aberration correction conditions respectively correspond to multiple acceleration voltages.3. The charged particle beam device according to claim 1 ,wherein the multiple aberration correction conditions respectively correspond to multiple pole piece shapes of the objective lens.4. The charged particle beam device according to claim 1 ,wherein the multipole lens is a 12-pole lens including 12 poles, andwherein a first aberration correction condition is satisfied by magnetizing a first pole group including six poles of the 12 poles, a second aberration correction condition is satisfied by magnetizing a second pole ...

Electron Microscope and Specimen Tilt Angle Adjustment Method

An electron microscope includes: an irradiation lens system that irradiates a specimen with an electron beam; an irradiation system deflector that deflects an electron beam incident on the specimen; a specimen tilting mechanism that tilts the specimen; an imaging lens system that forms an electron diffraction pattern or an electron microscope image by using an electron having passed through the specimen; an imaging device that acquires the electron diffraction pattern or the electron microscope image formed by the imaging lens system; and a controller that controls the irradiation system deflector and the specimen tilting mechanism. The controller performs: a process of acquiring a plurality of electron diffraction patters formed by using electron beams having different incidence angles to the specimen, the different incidence angles having been obtained by deflecting the electron beams incident on the specimen by using the irradiation system deflector; a process of calculating a tilt angle of the specimen based on the plurality of electron diffraction patterns; and a process of controlling the specimen tilting mechanism so that the specimen has the calculated tilt angle. 1. An electron microscope comprising:an irradiation lens system that irradiates a specimen with an electron beam;an irradiation system deflector that deflects an electron beam incident on the specimen;a specimen tilting mechanism that tilts the specimen;an imaging lens system that forms an electron diffraction pattern or an electron microscope image by using an electron having passed through the specimen;an imaging device that acquires the electron diffraction pattern or the electron microscope image formed by the imaging lens system; anda controller that controls the irradiation system deflector and the specimen tilting mechanism,the controller configured to:acquire a plurality of electron diffraction patterns formed by using electron beams having different incidence angles to the specimen, the ...

Multipole Unit and Charged Particle Beam Device

An object is to provide a multipole unit capable of achieving both high positional accuracy and ease of assembling and preventing a decrease in the transmission rate of the magnetic flux. A multipole unit includes a pole that is made of a soft magnetic metal material, a shaft that is made of a soft magnetic metal material and is magnetically connected to the pole, and a coil that is wound around the shaft . The pole is provided with a first fitting portion JP that forms a first recessed portion or a first protruding portion. The shaft is provided with a second fitting portion JP that forms a second protruding portion or a second recessed portion. The first fitting portion JP and the second fitting portion JP are fitted with each other such that the pole and the shaft are physically separated from each other. 1. A multipole unit , comprising:a pole made of a soft magnetic metal material;a shaft made of a soft magnetic metal material and magnetically connected to the pole; anda coil wound around the shaft, whereinthe pole is provided with a first fitting portion that forms a first recessed portion or a first protruding portion,the shaft is provided with a second fitting portion that forms a second protruding portion or a second recessed portion,the second fitting portion forms the second protruding portion when the first fitting portion is the first recessed portion, and forms the second recessed portion when the first fitting portion is the first protruding portion, andthe first fitting portion and the second fitting portion are fitted with each other such that the pole and the shaft are physically separated from each other.2. The multipole unit according to claim 1 , whereinthe shaft is provided with a voltage supply terminal configured to supply a predetermined voltage to the shaft, andan elastic member having conductivity is provided in a gap between the first fitting portion and the second fitting portion so that the pole and the shaft are electrically connected. ...

CHARGED PARTICLE BEAM DEVICE

This charged particle beam device is characterized by controlling a deflector in a manner so as to correct the amount of scanning deflection of a charged particle beam between: a first detection condition for detecting a secondary charged particle () signal; and a second detection condition for detecting a reflected charged particle () signal. As a result, it is possible to correct length measurement error and scaling fluctuation arising when altering the type of charged particle to detect. Thus, in the observation, measurement, and the like of a low-step sample or a charged sample, even when forming an image that is on the basis of the reflected charged particle signal, it is possible to obtain an accurate image regardless of length measurement error and scaling fluctuation. 1. A charged particle beam device comprising:a charged particle source for emitting a charged particle beam;an accelerating electrode for accelerating the charged particle beam;a deflector for scanning and deflecting the charged particle beam;an objective lens for converging the charged particle beam;a sample stage for mounting a sample thereon;a detector for detecting charged particles emitted from the sample;an electrode located at a position closer to the sample than the detector for receiving a positive or a negative voltage; anda control computer for supplying a signal to the deflector,wherein the control computer controls the voltage applied to the electrode and supplies to signal to the deflector so as to correct a scanning deflection of the charged particle beam between a first detection condition of detection of a secondary charged particle and a second detection condition of detection of a reflected charged particle.2. The charged particle beam device according to claim 1 , wherein the control computer controls the voltage applied to the electrode so as to be changed over from the first detection condition of application of the positive voltage to the electrode to the second detection ...

Asymmetric Electrostatic Quadrupole Deflector for Improved Field Uniformity

An electron beam device for inspecting a target substrate or specimen thereon includes a beam separator with an asymmetric quadrupole electrostatic deflector for improving field uniformity for a single direction of deflection. The asymmetric quadrupole electrostatic deflector includes two orthogonal electrode plates spanning roughly 60 degrees and two electrode plates spanning roughly 120 degrees, the two latter plates defining a unidirectional deflection field. The device generates a primary electron beam and focuses the primary electron beam along an optical axis into the target substrate. Secondary electrons detected at the target substrate are focused into a secondary electron beam. The beam separator with asymmetric quadrupole electrostatic deflector deflects the secondary electron beam away from the axis of the primary electron beam in the direction of deflection and into a detector array. 1. An asymmetric quadrupole electrostatic deflector , comprising:a first pair of plates including a first plate and a second plate, the first plate and the second plate each spanning a first radial angle; anda second pair of plates including a third plate and a fourth plate, the third plate and the fourth plate each adjacent to the first plate and the second plate and each spanning a second radial angle greater than the first radial angle.2. The deflector of claim 1 , wherein the second radial angle is twice the first radial angle.3. The deflector of claim 1 , further comprising:a plurality of gaps including at least a first gap separating the first plate from the third plate, a second gap separating the third plate from the second plate, a third gap separating the second plate from the fourth plate, and a fourth gap separating the fourth plate from the first plate, each gap of the plurality of gaps spanning a third radial angle.4. The deflector of claim 3 , wherein the first radial angle is between 58 and 60 degrees claim 3 , the second radial angle is between 116 and 120 ...

CHARGED PARTICLE BEAM DEVICE

This charged particle beam device comprises: an electron beam source (); a charged particle optical system that includes an object lens () and that irradiates a sample () with electrons emitted from the electron beam source () as an electron beam (); an aberration corrector () that corrects aberrations in the charged particle optical system; and a control unit () that controls the components of the charged particle optical system and the aberration corrector (). The charged particle beam device further comprises an automatic aberration-correcting device () that autonomously acquires, through leaning, optimum adjustment procedures in order to reduce the time required for correcting parasitic aberrations that arise in the aberration corrector (). 1. A charged particle beam device comprising:a charged particle beam source;a charged particle optical system irradiating a sample with a charged particle emitted from the charged particle beam source as a charged particle beam;an aberration corrector correcting an aberration of the charged particle optical system; anda control unit controlling various components of the charged particle optical system and the aberration corrector, wherein the charged particle beam device further comprises:an automatic aberration-correcting device autonomously acquiring optimum adjustment procedures by learning.2. A charged particle beam device comprising:a charged particle beam source;a charged particle optical system irradiating a sample with a charged particle emitted from the charged particle beam source as a charged particle beam;an aberration corrector correcting an aberration of the charged particle optical system;a control unit controlling various components of the charged particle optical system and the aberration corrector;an aberration measurement unit measuring a plurality of aberration coefficients of the charged particle optical system;a storage device saving a value function table holding a value indicating which of a plurality ...

CHARGED PARTICLE BEAM APPARATUS AND ABERRATION CORRECTOR

High expectations are placed on aberration correctors to increase the resolving power of charged particle devices. Meanwhile, a far more complicated configuration and higher mechanical precision assembly in comparison to prior art aberration correctors are necessary in charged particle beam optical devices that use low-energy electron beams. A complex electromagnetic quadrupole part employed in the aberration corrector preferably has the forward extremities of the poles provided in a vacuum near an electron beam path and excitation coils disposed outside the vacuum, and this necessitates a structure that can achieve both electrical insulation and vacuum sealing for each of these poles. Such structural complexity generally conflicts with improving mechanical assembly precision. The complicated structure in the above problems can be simplified by: separating the electrodes and the magnetic poles in the complex electromagnetic multipole that had been used in prior art aberration correctors; and offsetting the positions of both, or ensuring that the widths of both do not match. Consequently, improvement of mechanical assembly precision can be achieved. 1. A charged particle beam apparatus , which is configured to irradiate a sample with a charged particle beam to detect a charged particle ascribable to the sample , the charged particle beam apparatus comprising an aberration correction unit , a first magnetic multipole and a second magnetic multipole;', 'a third magnetic multipole and a fourth magnetic multipole that are provided between the first magnetic multipole and the second magnetic multipole; and', 'a first electrostatic multipole and a second electrostatic multipole that are provided between the first magnetic multipole and the second magnetic multipole, wherein:, 'the aberration correction unit comprisingthe first magnetic multipole, the second magnetic multipole, the third magnetic multipole, and the fourth magnetic multipole and the first electrostatic ...

ABERRATION CORRECTOR AND ELECTRON MICROSCOPE

In order to provide an aberration corrector with a wide aberration correction range, easy control, highly accurate aberration correction, and a low cost, an aberration corrector, passing an electron beam through a central axis includes a first current line group ( to ) which is arranged parallel to an optical axis at a position separated by R from the central axis, and excites a first multipole field, and a second current line group ( to ) which is arranged parallel to the optical axis at a position separated by R from the central axis, and independently excites a second multipole field having an order and intensity different from those of the first multipole field. 1. An electron microscope comprising:an electron source;an aberration corrector which corrects an aberration of an electron beam emitted from the electron source; andan electron optical system which irradiates a sample with the electron beam, wherein an opening through which the electron beam passes through a central axis,', 'a first current line group which is arranged parallel to an optical axis at a position separated by a first radius from the central axis, and excites a first multipole field, and', 'a second current line group which is arranged parallel to the optical axis at a position separated by a second radius longer than the first radius, and independently excites a second multipole field having an order and intensity different from those of the first multipole field., 'the aberration corrector includes'}2. The electron microscope according to claim 1 , whereinthe number of lines of the first current line group is 12 or more.3. The electron microscope according to claim 1 , whereinthe first multipole field has an order higher than that of the second multipole field.4. The electron microscope according to claim 1 , whereina line width per pole of a current line constituting the second current line group is larger than a line width per pole of a current line constituting the first current line ...

APPARATUS AND METHODS FOR ABERRATION CORRECTION IN ELECTRON BEAM BASED SYSTEM

One embodiment relates to an apparatus for aberration correction in an electron beam lithography system. An inner electrode surrounds a pattern generating device, and there is at least one outer electrode around the inner electrode. Each of the inner and outer electrodes has a planar surface in a plane of the pattern generating device. Circuitry is configured to apply an inner voltage level to the inner electrode and at least one outer voltage level to the at least one outer electrode. The voltage levels may be set to correct a curvature of field in the electron beam lithography system. Another embodiment relates to an apparatus for aberration correction used in an electron based system, such as an electron beam inspection, or review, or metrology system. Other embodiments, aspects and features are also disclosed. 1. An apparatus for aberration correction in electron-optics of an electron beam system , the apparatus comprising:an inner electrode surrounding an opening or reflector in the electron-optics, the inner electrode having a continuous annular planar surface with circular inner and outer perimeters in a plane of the opening or reflector;at least one outer electrode around the inner electrode, the at least one outer electrode having a planar surface in the plane of the opening or reflector; andcircuitry configured to apply an inner voltage level to the inner electrode and at least one outer voltage level to the at least one outer electrode,wherein the inner voltage level and the at least one outer voltage levels, as applied to said electrodes, each causes an electric field that influences both electrons incident to the opening or reflector and electrons outgoing from the opening or reflector.2. The apparatus of claim 1 , wherein each of the inner voltage level and the at least one outer voltage level are controlled individually.3. The apparatus of claim 2 , wherein the inner voltage level and the at least one outer voltage level are set to correct a curvature ...

Liner Tube and Electron Microscope

There is provided a liner tube capable of reducing the effects of magnetic field variations on an electron beam. The liner tube () is disposed inside the electron optical column () of an electron microscope (). The interior of the tube () forms a path for the electron beam (EB). The liner tube () has a first cylindrical member () that is made of copper, gold, silver, or an alloy consisting principally of one of these metals. 1. A liner tube disposed inside an electron optical column of an electron microscope and having an interior providing an elongate path for an electron beam , said liner tube separating an inner vacuum region and an outer non-vacuum region where electron optical elements that generate magnetic fields to affect the electron beam are disposed , said liner tube comprising:a first cylindrical member made of copper, gold, silver, or an alloy consisting principally of one of these metals.2. The liner tube as set forth in claim 1 , wherein a second cylindrical member is disposed inside said first cylindrical member and made of stainless steel or titanium.3. The liner tube as set forth in claim 1 , wherein said first cylindrical member is made of copper or beryllium copper.4. An electron microscope having an electron optical column in which a liner tube is disposed claim 1 , the liner tube having an interior providing an elongate path for an electron beam claim 1 , said liner tube separating an inner vacuum region and an outer non-vacuum region where electron optical elements that generate magnetic fields to affect the electron beam are disposed claim 1 ,wherein said liner tube has a first cylindrical member made of copper, gold, silver, or an alloy consisting principally of one of these metals.5. The electron microscope as set forth in claim 4 , further comprising an aberration corrector equipped with a multipole element claim 4 ,wherein said multipole element has a plurality of polar elements arranged around said first cylindrical member.6. The ...

Charged Particle Beam Apparatus

An object of the present disclosure is to provide a charged particle beam apparatus that can quickly find a correction condition for a new aberration that is generated in association with beam adjustment. In order to achieve the above object, the present disclosure proposes a charged particle beam apparatus configured to include an objective lens () configured to focus a beam emitted from a charged particle source and irradiate a specimen, a visual field movement deflector ( and ) configured to deflect an arrival position of the beam with respect to the specimen, and an aberration correction unit ( and ) disposed between the visual field movement deflector and the charged particle source, in which the aberration correction unit is configured to suppress a change in the arrival position of the beam irradiated under different beam irradiation conditions. 1. A method of positioning a visual field at a desired position on a specimen by using a visual field movement deflector that changes an arrival position of a beam emitted from a charged particle source , the method comprising:deflecting the beam to a desired arrival position by using the visual field movement deflector;adjusting a deflection condition of the visual field movement deflector so as to cancel an inclination of an incident beam when the beam is deflected to the desired arrival position; andadjusting an aberration correction unit disposed between the charged particle source and the visual field movement deflector so as to cancel off-axis chromatic aberration generated according to an amount of visual field movement by the visual field movement deflector and off-axis chromatic aberration generated by setting the deflection condition of the visual field movement deflector so as to cancel the inclination of the incident beam.2. A charged particle beam apparatus comprising:an objective lens configured to focus a beam emitted from a charged particle source and irradiate a specimen;a visual field movement ...

Method and device for manipulating particle beam

A method of manipulating an electron beam is disclosed. The method comprises transmitting the beam through a phase mask selected to spatially modulate a phase of the beam over a cross-section thereof.

MEASURING SPHERICAL AND CHROMATIC ABERRATIONS IN CATHODE LENS ELECTRODE MICROSCOPES

An electron microscope system and a method of measuring an aberration of the electron microscope system are disclosed. A method of controlling an aberration of an electron microscope includes obtaining a dispersed energy distribution for electrons at a diffraction plane of the electron microscope and placing an aperture at a selected location of the dispersed energy distribution in the diffraction plane. The method measures displacement of an image of the aperture in an image plane of the electron microscope for the selected location of the aperture. The method determines an aberration coefficient of the electron microscope from the measured displacement and the selected location of the aperture and alters a parameter of an element of the electron microscope to control the aberration of the electron microscope based at least in part on the determined aberration coefficient. 1. A method of controlling an aberration of an electron microscope , comprising:obtaining a dispersed energy distribution for electrons at a diffraction plane of the electron microscope;placing an aperture at a selected location of the dispersed energy distribution in the diffraction plane;measuring displacement of an image of the aperture in an image plane of the electron microscope for the selected location of the aperture;determining an aberration coefficient of the electron microscope from the measured displacement and the selected location of the aperture; andaltering a parameter of an element of the electron microscope to control the aberration of the electron microscope based at least in part on the determined aberration coefficient.2. The method of claim 1 , wherein the electron microscope includes an optical element for controlling an electron beam of the electron microscope claim 1 , the method further comprising altering a setting of the optical element to produce an aberration at the optical element to control the aberration of the electron microscope.3. The method of claim 2 , ...

CHARGED-PARTICLE MICROSCOPE WITH ASTIGMATISM COMPENSATION AND ENERGY-SELECTION

A method of producing a corrected beam of charged particles for use in a charged-particle microscope, comprising the following steps: 1. A method of producing a corrected beam of charged particles for use in a charged-particle microscope , comprising:providing a non-monoenergetic input beam of charged particles; and a stigmator, thereby producing an astigmatism-compensated, energy-dispersed intermediate beam with a particular monoenergetic line focus direction; and', 'a beam selector, comprising a slit that is rotationally oriented so as to match a direction of the slit to said line focus direction, thereby producing an output beam comprising an energy-discriminated portion of said intermediate beam., 'passing said input beam through an optical module comprising a series arrangement of2. A method according to claim 1 , wherein:stigmator is used to mitigate a first, systematic astigmatism effect; andbeam selector is used to address a second, parasitic astigmatism effect.3. A method according to claim 2 , wherein;said first, systematic astigmatism effect is associated with eccentric lens traversal by said input beam; andsecond, parasitic astigmatism effect is associated with positioning errors in optical components upstream of the beam selector.4. A method according to claim 1 , wherein:beam selector comprises an opaque plate containing a plurality of slits of different orientations; andparticular slit is selected by effecting appropriate relative motion of said plate and said intermediate beam.5. A method according to claim 1 , wherein said beam selector comprises an opaque plate having a slit of adjustable orientation.6. A corrector device for use in a charged-particle microscope claim 1 , characterized in that it comprises:input for a non-monoenergetic input beam of charged particles; and stigmator, for producing an astigmatism-compensated, energy-dispersed intermediate beam with a particular monoenergetic line focus direction; and', 'beam selector, comprising a ...

CHARGED-PARTICLE-BEAM DEVICE AND METHOD FOR CORRECTING ABERRATION

In aberration measurement, a focus or an inclination angle of a beam is changed to extract a characteristic amount from plural images of an electron microscope, so that an aberration coefficient indicating the size and direction of aberration is obtained. However, when the aberration is extremely large, the electron microscope images are greatly distorted, which causes difficulties in extraction of the feature amount. 1. A charged-particle-beam device comprising:a charged-particle-beam source;a charged-particle optical system that irradiates a specimen with charged particles emitted from the charged-particle-beam source;an aberration corrector that corrects an aberration of the charged-particle optical system;a control unit that controls the charged-particle optical system and the aberration corrector;a through-focus imaging unit that obtains a plurality of Ronchigrams in which a focal position of the charged-particle optical system is changed; andan aberration calculation unit that divides the obtained Ronchigram into a plurality of local areas, and calculates the amount of the aberration based on line focuses detected in the local areas.2. The charged-particle-beam device according to claim 1 ,wherein the aberration calculation unit fits iso-intensity lines in the local areas using ellipses and detects the line focuses based on the ellipses for the fitting.3. The charged-particle-beam device according to claim 2 ,wherein the iso-intensity lines in the local areas are calculated by an autocorrelation function or Fourier transform.4. The charged-particle-beam device according to claim 1 , further comprising:an input unit through which a setting value is input,wherein the through-focus imaging unit changes the focal position in a range based on the input setting value.5. The charged-particle-beam device according to claim 4 ,wherein the line focuses are detected in the local areas of each obtained Ronchigram on an under-focus side and on an over-focus side, andthe ...

Aberration Corrector and Electron Microscope

An aberration corrector for an electron microscope includes a geometric aberration corrector provided with a transfer lens system, wherein the transfer lens system includes an optical system for chromatic aberration correction, the optical system for chromatic aberration correction has a first portion, a second portion, and a third portion disposed along an optical axis, and each of the first portion, the second portion, and the third portion has a thickness in a direction along the optical axis and generates an electromagnetic field having two-fold symmetry in which an electric field having two-fold symmetry and a magnetic field having two-fold symmetry are superimposed. 1. An aberration corrector for an electron microscope , the aberration corrector comprising:a geometric aberration corrector provided with a transfer lens system,the transfer lens system including an optical system for chromatic aberration correction,the optical system for chromatic aberration correction having a first portion, a second portion, and a third portion disposed along an optical axis, andeach of the first portion, the second portion, and the third portion having a thickness in a direction along the optical axis and generating an electromagnetic field having two-fold symmetry in which an electric field having two-fold symmetry and a magnetic field having two-fold symmetry are superimposed.2. The aberration corrector according to claim 1 , whereinthe transfer lens system includes the optical system for chromatic aberration correction in two stages;a first optical system for chromatic aberration correction among the optical system for chromatic aberration correction in two stages generates a first electromagnetic field;a second optical system for chromatic aberration correction among the optical system for chromatic aberration correction in two stages generates a second electromagnetic field;the first optical system for chromatic aberration correction and the second optical system for ...

Multidimensional Structural Access

Multiple planes within the sample are exposed from a single perspective for contact by an electrical probe. The sample can be milled at a non-orthogonal angle to expose different layers as sloped surfaces. The sloped edges of multiple, parallel conductor planes provide access to the multiple levels from above. The planes can be accessed, for example, for contacting with an electrical probe for applying or sensing a voltage. The level of an exposed layer to be contacted can be identified, for example, by counting down the exposed layers from the sample surface, since the non-orthogonal mill makes all layers visible from above. Alternatively, the sample can be milled orthogonally to the surface, and then tilted and/or rotated to provide access to multiple levels of the device. The milling is preferably performed away from the region of interest, to provide electrical access to the region while minimizing damage to the region. 1. A method of analyzing a region of interest in a three dimensional integrated circuit structure having multiple layers of conductive materials , comprising:directing a focused ion beam toward the three dimensional integrated circuit structure at a non-normal angle to the layers of conductive material to expose multiple horizontal conductive layers;determining which exposed horizontal conductor corresponds to the vertical position of a component of interest;moving one or more electrical probes to contact the exposed horizontal conductor from above;applying a voltage to the electrical probe; andobserving the effect of the applied voltage to analyze the region of interest.2. The method of in which directing a focused ion beam toward the three dimensional integrated circuit structure includes directing the focused ion beam to leave the region of interest intact while exposing multiple horizontal conductive layers to provide electrical access to the region of interest.3. The method of in which moving one or more electrical probes to contact the ...

METHOD FOR AXIAL ALIGNMENT OF CHARGED PARTICLE BEAM AND CHARGED PARTICLE BEAM SYSTEM

A method for axial alignment of a charged particle beam relative to at least three stages of multipole elements and a charged particle beam system capable of making the axial alignment. Some parts of the orbit of the beam or the distributions of three astigmatic fields, or both, are simultaneously translated in a direction perpendicular to the optical axis such that astigmatisms of the same order and same type due to axial deviations between successive ones of the astigmatic fields cancel. 1. A method of making axial alignment of a charged particle beam in a charged particle beam system , said method comprising the steps of:producing at least 3 three-fold astigmatic fields;producing a pair of rotationally symmetric fields between any adjacent two of the astigmatic fields to transfer planes equivalent to planes formed by the astigmatic fields to their downstream astigmatic fields; andsimultaneously performing first deflections to cause parts of the orbit of the charged particle beam to enter the three-fold astigmatic fields obliquely.2. The method of making axial alignment of a charged particle beam as set forth in claim 1 , further comprising the step of performing a second deflection simultaneously with said first deflections claim 1 , the second deflection operating to cause the charged particle beam exiting from the three-fold astigmatic field distributed on the most downstream side of said at least 3 three-fold astigmatic fields to propagate on an optical axis.3. The method of making axial alignment of a charged particle beam as set forth in claim 1 , wherein said first deflections include translating the charged particle beam relative to other than the three-fold astigmatic field distributed on the most upstream or downstream side of the three-fold astigmatic fields.4. The method of making axial alignment of a charged particle beam as set forth in claim 3 , wherein said first deflections include translating the charged particle beam relative to other than the ...

Electron Microscope

An electron microscope includes: an optical system including an aberration correction device; and a control unit that controls the aberration correction device, wherein the control unit performs: processing for displaying, on a display unit, an image for designating a direction of aberration in superposition on an aberration pattern representing a state of aberration, processing for specifying the direction of aberration from the image that has been subjected to a rotation operation, and processing for controlling the aberration correction device to cause the aberration correction device to introduce an aberration in the specified direction.

METHOD FOR AUTOMATIC CORRECTION OF ASTIGMATISM

The method is for automatic astigmatism correction of a lens system. A first image of a first frequency spectrum in a microscope is provided. The first image of a view is not in focus. The first image is then imaged. A first roundness measure of a distribution and directions of intensities in the first image is determined. The lens is changed to a second stigmator setting to provide a second image of a second frequency spectrum. The second image of the view is not in focus. The second image is the same view as the first image of the view at the first stigmator setting. A second roundness measure of a distribution and directions of intensities in the second image is determined. The first roundness measure is compared with the second roundness measure. The image with the roundness measure indicating the roundest distribution is selected. 1. A method for automatic astigmatism correction of a lens system , comprising ,providing a first image of a first frequency spectrum in a microscope, the first image of a view not being in focus at a first stigmator setting of a lens,imaging the first image,determining a first roundness measure of a distribution and directions of intensities in the first image,changing the lens from the first stigmator setting to a second stigmator setting to provide a second image of a second frequency spectrum, the second image of the view not being in focus at the second stigmator setting of the lens, the second image at the second stigmator setting being of the same view as the first image of the view at the first stigmator setting, determining a second roundness measure of a distribution and directions of intensities in the second image,comparing the first roundness measure with the second roundness measure,when the first roundness measure indicates a rounder distribution than the second roundness measure, selecting the first image at the first stigmator setting, andwhen the second roundness measure indicates a rounder distribution than the ...

Charged-Particle-Beam Device

Provided is a charged-particle-beam device capable of simultaneously cancelling out a plurality of aberrations caused by non-uniform distribution of the opening angle and energy of a charged particle beam. The charged-particle-beam device is provided with an aberration generation lens for generating an aberration due to the charged particle beam passing off-axis, and a corrective lens for causing the trajectory of the charged particle beam to converge on the main surface of an objective lens irrespective of the energy of the charged particle beam. The main surface of the corrective lens is disposed at a crossover position at which a plurality of charged particle beams having differing opening angles converge after passing through the aberration generation lens. 1. A charged-particle-beam device comprising:a charged-particle-beam source for discharging charged-particle beams;an objective lens for focusing the charged-particle beams on a specimen;an aberration generation lens arranged between the objective lens and the charged-particle-beam source and directed for generating an aberration when the charged-particle beams pass off the axis; anda correction lens for focusing trajectories of the charged-particle beams on a principal plane of the objective lens irrespective of energy of the charged-particle beams,wherein the principal plane of the correction lens is arranged at a crossover position where the trajectories of the charged-particle beams with different opening angles pass through the aberration generation lens and then focus.2. The charged-particle-beam device according to claim 1 ,wherein the principal plane of the correction lens is arranged to overlap on an object plane of the objective lens.3. The charged-particle-beam device according to claim 1 ,wherein the aberration generation lens is configured to generate an aberration for cancelling an aberration generated on the objective lens.4. The charged-particle-beam device according to claim 1 ,wherein the ...

SYSTEM AND METHOD FOR USE IN ELECTRON MICROSCOPY

An electron beam shaping unit for use in electron beam column and a method for designing thereof is presented. The electron beam shaping unit is configured for affecting electron beams of high density or strong electron-electron repulsion. These 5 beams can always be modeled with multi electron wave function. The electron beam shaping unit comprises a mask unit configured for affecting propagation of electrons therethrough to thereby form a propagating electron beam having, at far field, radial shape as determined by multi-electron non-linear function being an eigen function determined by a multi-electron Hartree-Fock Hamiltonian. 1. An electron beam shaping unit for use in electron beam column , the electron beam shaping unit is configured for affecting multi electron wave function and comprising a mask unit configured for affecting propagation of electrons therethrough to thereby form at far field thereof a propagating electron beam having radial shape as determined by MENL function being an eigen function determined by a multi-electron Hartree-Fock Hamiltonian.2. The electron beam shaping unit of claim 1 , wherein the mask is configured as a binary mask having a plurality of spaced apart transmitting and blocking regions.3. The electron beam shaping unit of claim 1 , wherein the mask is configured as a phase and amplitude mask having a kinoform surface relief configuration.4. The electron beam shaping unit of claim 1 , wherein the mask is configured to direct the electron beam having MENL wavefunction to a zero or first diffraction order.5. The electron beam shaping unit of claim 1 , wherein the mask is configured to generate electron beam having MENL wavefunction having zero or integer value of orbital angular momentum.7. A method for use in design of an electron beam column claim 1 , the method comprising: providing data about desired electron beam parameters; determining corresponding parameters for a multi-electron Hamiltonian; determining an eigen function ...

Charged Particle Beam Apparatus

An object of the present disclosure is to provide a charged particle beam apparatus that can quickly find a correction condition for a new aberration that is generated in association with beam adjustment. In order to achieve the above object, the present disclosure proposes a charged particle beam apparatus configured to include an objective lens () configured to focus a beam emitted from a charged particle source and irradiate a specimen, a visual field movement deflector ( and ) configured to deflect an arrival position of the beam with respect to the specimen, and an aberration correction unit ( and ) disposed between the visual field movement deflector and the charged particle source, in which the aberration correction unit is configured to suppress a change in the arrival position of the beam irradiated under different beam irradiation conditions.

SYSTEMS AND METHODS OF ABERRATION CORRECTION FOR ATOM PROBE TOMOGRAPHY

Methods and systems for correcting aberrations in atom probe tomography are described. A specimen function associated with a plurality of lattice positions of ions of a specimen in a holder is generated using a transmission electron microscope. An image function associated with x- and y-coordinates and time of flight information for a plurality of ions of the specimen in the holder is generated using a delay line detector mounted on the transmission electron microscope. A transfer function based on the specimen function and the image function is generated. The transfer function comprises information relating to ion trajectory aberrations. An Atom Probe Tomography (APT) image of the specimen is generated based on the specimen function, the image function, and the transfer function. The APT image is adjusted to correct for the ion trajectory aberrations. 1. A method for correcting aberrations in atom probe tomography , the method comprising:generating, using a transmission electron microscope, a specimen function associated with a plurality of lattice positions of ions of a specimen in a holder;generating, using a delay line detector mounted on the transmission electron microscope, an image function associated with x- and y-coordinates and time of flight information for a plurality of ions of the specimen in the holder;generating a transfer function based on the specimen function and the image function, wherein the transfer function comprises information relating to ion trajectory aberrations; andgenerating an Atom Probe Tomography (APT) image of the specimen based on the specimen function, the image function, and the transfer function, wherein the APT image is adjusted to correct for the ion trajectory aberrations.2. The method of claim 1 , wherein the holder applies a cryogenic temperature to the specimen.3. The method of claim 1 , wherein the holder applies a high voltage to the specimen.4. The method of claim 3 , wherein a negative voltage is applied to a local ...

Method and device for manipulating particle beam

A method of manipulating an electron beam is disclosed. The method comprises transmitting the beam through a phase mask selected to spatially modulate a phase of the beam over a cross-section thereof.

MEASURING SPHERICAL AND CHROMATIC ABERRATIONS IN CATHODE LENS ELECTRODE MICROSCOPES

An electron microscope system and a method of measuring an aberration of the electron microscope system are disclosed. An aperture filters an electron beam at a diffraction plane of the electron microscope to pass through electrons having a selected energy and momentum. A displacement of an image of the passed electrons is measured at a detector in an image plane of the electron microscope. An aberration coefficient of the electron microscope is determined from the measured displacement and at least one of the energy and momentum of the passed electrons. The measured aberration can be used to alter a parameter of the electron microscope or an optical element of the electron microscope to thereby control the overall aberration of the electron microscope. 1. A method of measuring an aberration of an electron microscope , comprising:filtering an electron beam of the electron microscope at a diffraction plane of the electron microscope to pass through electrons having a selected energy and momentum;measuring a displacement of an image of the passed electrons at an image plane of the electron microscope;determining an aberration coefficient of the electron microscope from the measured displacement and at least one of the energy and momentum of the passed electrons; andaltering a parameter of the electron microscope to control the aberration of the electron microscope based at least in part on the determined aberration coefficient.2. The method of claim 1 , wherein the electron microscope includes a mirror element for controlling an electron beam of the electron microscope claim 1 , the method further comprising adjusting the mirror element to alter the aberration.3. The method of claim 1 , further comprising selecting the electrons using an aperture movable within the diffraction plane.4. The method of claim 3 , wherein filtering the electron beam further comprises selecting electrons at a plurality of locations within the diffraction plane claim 3 , wherein the ...

MULTI-BEAM INSPECTION APPARATUS

An improved source conversion unit of a charged particle beam apparatus is disclosed. The source conversion unit comprises a first micro-structure array including a plurality of micro-structures. The plurality of micro-structures is grouped into one or more groups. Corresponding electrodes of micro-structures in one group are electrically connected and driven by a driver to influence a corresponding group of beamlets. The micro-structures in one group may be single-pole structures or multi-pole structures. The micro-structures in one group have same or substantially same radial shifts from an optical axis of the apparatus. The micro-structures in one group have same or substantially same orientation angles with respect to their radial shift directions. 1. A micro-structure array , the array comprising:a first group of multi-pole structures having first radial shifts from a central axis of the array and first orientation angles, wherein the first radial shifts are equal or substantially equal, the first orientation angles of the first group of multi-pole structures are equal or substantially equal, and the first group of multi-pole structures comprises corresponding electrodes that are electrically connected and driven by a first driver.2. The micro-structure array of claim 1 , wherein the first driver is configured to enable the first group of multi-pole structures to function as micro-deflectors to deflect a first group of beamlets in a charged-particle multi-beam apparatus.3. The micro-structure array of claim 1 , wherein the first driver is configured to enable the first group of multi-pole structures to function as micro-stigmators to compensate astigmatism aberrations of a first group of beam spots in a charged-particle multi-beam apparatus.4. The micro-structure array of claim 2 , further comprising a second group of multi-pole structures having second radial shifts from the central axis and second orientation angles claim 2 , wherein the second radial shifts ...

Electron optical correction system for lenses of electron microscope - has series of electric or magnetic and electromagnetic quadrupole elements located in optical path in astigmatic intermediate images.

The axial ray x and y components (1) passing through a circular lens are deflected by a quadrupole (2) which is followed by an electromagnetic quadrupole (3). A further quadrupole follows (4) and is located ahead of an octupole (5) on the centre axis (6). Further quadrupoles (7,8,9) complete the system. ADVANTAGE - For correction of third order aperture errors that occur in lens systems of electron microscope systems. Axial chromatic errors of first order are also corrected.

Corpuscular-optical system for generating images (versions)

FIELD: information technology. SUBSTANCE: proposed system contains a vacuum system, object table with a test sample, light source, objective and series-arranged dispersion type magnetic deflector (MD), aberration corrector (AC), based on axially symmetric aberration electrostatic mirror, carrier lens unit and projection unit. A compensator of angular energy dispersion (CAED), containing an axially symmetric unit of guide electronic lenses (UGL), is installed after the magnetic deflector. In the first version in the compensator of angular energy dispersion after the unit of guide electronic lenses there is an electrostatic mirror, adjusted in the mode of aberration-free image transfer to the centre of the magnetic deflector with optical magnification coefficient (OMC) equal to 1, with formation of negative feedback on angular energy dispersion. In the second version a second magnetic deflector is installed after the unit of guide electronic lenses, identical to the first. The unit of guide electronic lenses provides for image transfer to the centre of the second magnetic deflector with optical magnification coefficient equal to 1. In the third version a second magnetic deflector is installed after the unit of guide electronic lenses, not identical to the first, and the unit of guide electronic lenses provides for image transfer to the centre of the magnetic deflector with value of optical magnification coefficient equal to the ratio of sines of angle of deflection of optical axes of the first and second magnetic deflectors. EFFECT: increased resolution due to correction of spherochromatic aberration and elimination of causes of quadratic chromatic aberration. 7 cl, 5 dwg, 1 tbl РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2 362 234 (13) C1 (51) МПК H01J 37/153 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (21), (22) Заявка: 2007136718/28, 03.10.2007 (24) Дата начала отсчета срока действия патента: ...

Aberration correction apparatus and charged particle beam apparatus using the same

Corrector

The corrector (10) is provided with six multi-pole elements (1,2,3,4,5,6) arranged in the beam path (7) adjacently symmetric to a symmetric plane (8). All the multi-pole elements serve for generation of quadrupole fields. A stigmatic intermediate image of the axial fundamental paths exists in the former quadrupole field of the former quadrupole element.

Corrector

Die Erfindung betrifft einen Korrektor für die Farb- und Öffnungsfehlerkorrektur bei einem Elektronenmikroskop mit im Strahlengang (7) nacheinander symmetrisch zu einer Symmetrieebene (8) angeordneten sechs Multipolen, die zur Erzeugung von Quadrupolfeldern (1', 2', 3', 4', 5', 6') und von Oktupolfeldern dienen, wobei die Quadrupolfelder (1', 2', 3', 4', 5', 6') aller sechs Multipole von einem zum nächsten um 90° gedreht sind, wobei eine spiegelsymmetrische Austauschsymmetrie der axialen Fundamentalbahnen (x ± , y ² ) entsteht. Erfindungsgemäß wird für die Korrektur einer azimutalen Koma folgendes vorgesehen: Ein Doppelmultipol mit einem Multipolelement vor und einem Multipolelement nach der Symmetrieebene (8), der zwei Oktupolfelder (11', 12') gleicher Orientierung wie die Quadrupolfelder (1', 2', 3', 4', 5', 6') und zwei weitere Oktupolfelder (11'', 12'') erzeugt, die zueinander unterschiedlich gepolt sind und im Verhältnis zu den erst genannten Oktupolfeldern (11', 12') in den Hauptschnitten (x, y) eine um 90° gedrehte Richtung der Kraftwirkung auf die Elektronen ausüben. Die sechs Multipole erzeugen ebenso ausgerichtete Oktupolfelder (1'', 2'', 3'', 4'', 5'', 6'') und die Einstellung der Polungen und Feldstärken der Oktupolfelder (1'', 2'', 3'', 4'', 5'', 6'', 11'', 12'') dienen der oben genannten Korrektur.

Corrector for axial and extra-axial beam path and TEM with it

Korrektor (1) für den axialen und außeraxialen Strahlengang eines teilchenoptischen Systems mit einem ersten (10) und einem zweiten (20) Korrekturstück, die im Strahlengang (2) auf einer optischen Achse (3) nacheinander angeordnet sind, wobei jedes Korrekturstück (10, 20) vier nacheinander angeordnete Multipolelemente (11, 12, 13, 14; 24, 23, 22, 21) mit den folgenden Feldern in einer Symmetrie zu einer Mittelebene (5) aufweist, wobei von den Multipolelementen (11, 12, 13, 14; 24, 23, 22, 21) das erste (11; 24) und das vierte (14; 21) zur Erzeugung von Quadrupolfeldern (11', 14'; 24', 21') und das zweite (12; 23) und dritte (13; 22) zur Erzeugung von Oktupolfeldern (12''', 13'''; 23''', 22''') und von Quadrupolfeldern (12', 13'; 23', 22') dienen, wobei letztere übereinandergelagerte magnetische (12', 13'; 23', 22') und elektrische Felder (12'', 13''; 23'', 22'') sind und wobei die Quadrupolfelder (11', 12', 13', 14'; 24', 23', 22', 21') aller vier Multipolelemente (11, 12, 13,... Corrector (1) for the axial and extra-axial beam path of a particle-optical system with a first (10) and a second (20) correction piece, which are arranged in the beam path (2) on an optical axis (3) successively, each correction piece (10, 20) has four successively arranged multipole elements (11, 12, 13, 14, 24, 23, 22, 21) with the following fields in a symmetry to a center plane (5), wherein of the multipole elements (11, 12, 13, 14 24, 23, 22, 21) comprise the first (11, 24) and the fourth (14, 21) for generating quadrupole fields (11 ', 14', 24 ', 21') and the second (12, 23) and third (13; 22) for generating octupole fields (12 '' ', 13' '', 23 '' ', 22' '') and of quadrupole fields (12 ', 13', 23 ', 22'), wherein the latter are superimposed ...

Corrective for eliminating the third-order aperture aberration and the first-order, first-degree axial chromatic aberration

Corrective for eliminating the third-order aperture aberration and the first-order, first-degree axial chromatic aberration comprising two correction pieces, which are arranged one behind the other in the direction of the optical axis, wherein each correction piece comprises a plurality of quadrupole fields (QP) and at least one octupole field (OP) and each correction piece is constructed such that it is symmetrical with respect to its central plane (S, S'), wherein each correction piece comprises an uneven number of at least 5 quadrupole fields (QP) and at least one octupole field (OP), each correction piece is constructed such that it is symmetrical with respect to its central plane, the central quadrupole field is arranged such that it is centered with respect to the central plane of the correction piece and is electromagnetic, the quadrupole fields of the two correction pieces are antisymmetrical and a transfer lens system is arranged such that it is symmetrical with respect to the central plane of the corrective between the correction pieces, which transfer lens system has two round lenses, and the setting of the transfer lens system takes place in such a way that they image the central plane of the two correction pieces anamorphically onto one another, wherein the enlargement in one main section is the reciprocal of the enlargement in the other main section, and an octupole field is superimposed on the central quadrupole field.

Charged particle beam chromatic aberration correction apparatus and charged particle beam apparatus equipped with the aberration correction apparatus

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Die Erfindung betrifft einen Korrektor (10) für die Farb- und Öffnungsfehlerkorrektur bei einem Elektronenmikroskop mit im Strahlengang (7) nacheinander symmetrisch zu einer Symmetrieebene (8) angeordneten sechs Multipolelementen (1, 2, 3, 4, 5, 6), von denen alle zur Erzeugung von Quadrupolfeldern (1', 2', 3', 4', 5', 6') und das dritte (3) und vierte (4) auch zur Erzeugung von Oktupolfeldern (3'', 4'') dienen, wobei letztere gleichgerichtet und die Quadrupolfelder (1', 2', 3', 4', 5', 6') aller sechs Multipolelemente (1, 2, 3, 4, 5, 6) von einem zum nächsten um 90° gedreht und punktsymmetrisch zum Schnittpunkt der optischen Achse (11) mit der Symmetrieebene (8) sind, wobei durch das Zusammenwirken der als magnetische und elektrische Felder (3', 4') ausgebildeten Quadrupolfelder (3', 4') des dritten (3) und vierten (4) Multipolelements eine Farbfehlerkorrektur sowie mittels der Quadrupolfelder (1', 2', 3', 4', 5', 6') und der Oktupolfelder (3'', 4'') eine Öffnungsfehlerkorrektur möglich ist. Ein solcher Korrektor (10) wird erfindungsgemäß dadurch gegenüber Schwankungen der elektrischen Energieversorgung unempfindlicher, daß im Quadrupolfeld (1') des ersten Quadrupolelements (1) ein stigmatisches Zwischenbild (9) der axialen Fundamentalbahnen (xα, yβ) entsteht und dieses Quadrupolfeld (1') derart eingestellt ist, daß astigmatische Zwischenbilder (12, 13) der außeraxialen Fundamentalbahnen (xγ, yδ) im Bereich der Mitte der Quadrupolfelder (3', 4') des dritten (3) und vierten Multipolelements (4) entstehen und dort auch durch die Einstellung des Quadrupolfeldes (2') des zweiten Quadrupolelements (2) die axialen Fundamentalbahnen (xα, yβ) des gleichen Schnitts (x, y), in dem die Zwischenbilder (12, 13) der außeraxialen Fundamentalbahnen (xγ, yδ) liegen, jeweils ein Maximum aufweisen. The invention relates to a corrector (10) for ...

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Die Erfindung betrifft einen Korrektor (9) für die Farb- und Öffnungsfehlerkorrektur bei einem Elektronenmikroskop mit im Strahlengang (7) nacheinander symmetrisch zu einer Symmetrieebene (8) angeordneten sechs Multipolen (1, 2, 3, 4, 5, 6), die zur Erzeugung von Quadrupolfeldern (1', 2', 3', 4', 5', 6') und von Oktupolfeldern dienen, wobei die Quadrupolfelder (1', 2', 3', 4', 5', 6') alter sechs Multipole (1, 2, 3, 4, 5, 6) von einem zum nächsten um 90° gedreht sind, wobei eine spiegelsymmetrische Austauschsymmetrie der axialen Fundamentalbahnen (xα, yβ) entsteht. Erfindungsgemäß wird für die Korrektur einer azimutalen Koma folgendes vorgesehen: Ein Doppelmultipol (10) mit einem Multipolelement (11) vor und einem Multipolelement (12) nach der Symmetrieebene (8), der zwei Oktupolfelder (11', 12') gleicher Orientierung wie die Quadrupolfelder (1', 2', 3', 4', 5', 6') und zwei weitere Oktupolfelder (11'', 12'') erzeugt, die zueinander unterschiedlich gepolt sind und im Verhältnis zu den erst genannten Oktupolfeldern (11', 12') in den Hauptschnitten (x, y) eine um 90° gedrehte Richtung der Kraftwirkung auf die Elektronen ausüben. Die sechs Multipole (1, 2, 3, 4, 5, 6) erzeugen ebenso ausgerichtete Oktupolfelder (1'', 2'', 3'', 4'', 5'', 6'') und die Einstellung der Polungen und Feldstärken der Oktupolfelder (1'', 2'', 3'', 4'', 5'', 6'', 11'', 12'') dienen der oben genannten Korrektur. The invention relates to a corrector (9) for correcting color and aperture errors in an electron microscope with six multipoles (1, 2, 3, 4, 5, 6) arranged one after the other in the beam path (7) symmetrically to a plane of symmetry (8), which are used for Generation of quadrupole fields (1 ', 2', 3 ', 4', 5 ', 6') and octupole fields are used, ...

Particle optical corrector for axial and off-axis beam path

Imaging system with mirror corrector for charged particle radiation

Imaging corrector of the Wien type for electron microscopes

DEVICE FOR CORRECTING LENS ERRORS IN PARTICLE OPTICAL DEVICES

Corrective for eliminating the third-order aperture aberration and the first-order, first-degree axial chromatic aberration

Device for correcting third-order spherical aberration in a lens, especially the objective lens of an electronic microscope

Corrector

Electron-optical corrector for eliminating third-order aberrations

Electron-optical corrector for an aplanatic imaging system

The invention relates to an electron-optical corrector for rendering superfluous both the third-order opening error and the anisotropic (azimutal) part of the extraaxial third-order coma, using round lenses and hexapole fields, the corrector consisting of at least three coaxially arranged hexapole fields. At least one round lens field is arranged between adjacent hexapole fields in such a way that the hexapole fields are imaged onto each other in pairs, and the intensities of the hexapole fields are selected in such a way that the image error coefficient of the threefold astigmatism is equal to 0, and at least three hexapole fields in the Larmor reference system are rotated in relation to each other at a certain angle about the optical axis.

Optical particle corrector

Corrector

SPHERICAL BREAKER CORRECTION DEVICE, METHOD FOR CORRECTING SPHERICAL ABERRATION AND LOADING PARTICLE BEAM INSTRUMENT

Eine Vorrichtung zur Korrektur sphärischer Aberration wird vorgeschlagen, welche das unabhängige Ausführen einer Korrektur einer Unrundheit eines Bilds und/oder eines Beugungsmusters und einer Korrektur von Aberrationen auf der Achse gestattet. Die Vorrichtung (100) zur Korrektur sphärischer Aberration ist mit einem Ladungsteilchenstrahl-Instrument (1) zum Gewinnen des Bilds und des Beugungsmusters zu verwenden und enthält einen Hexapolfeld-Erzeugungsteil (110) zum Erzeugen mehrerer Stufen von Hexapolfeldern, einen Oktopolfeld-Überlagerungsteil (120) zum Überlagern eines Oktopols über mindestens eine der mehreren Stufen von Hexapolfeldern, um eine Unrundheit des Bilds und/oder des Beugungsmusters zu korrigieren, und einen Ablenkteil (130) zum Ablenken eines Ladungsteilchenstrahls. A device for correcting spherical aberration is proposed, which allows the independent execution of a correction of an out-of-roundness of an image and / or a diffraction pattern and a correction of aberrations on the axis. The spherical aberration correcting apparatus (100) is to be used with a charged particle beam instrument (1) for obtaining the image and the diffraction pattern, and includes a hexapole field generating portion (110) for generating a plurality of stages of hexapole fields, an octopole field overlay portion (120). for superimposing an octopole over at least one of the plurality of steps of hexapole fields to correct out-of-roundness of the image and / or the diffraction pattern, and a deflecting part (130) for deflecting a charged particle beam.

Arrangement for focusing pulse particle combination from specimen on detector has particle-optical round lens optical system, part of which can be controlled by at least one rapidly switchable voltage

The pulsed particle focusing arrangement has an imaging system with a particle-optical round lens optical system, part of which can be controlled by at least one rapidly switchable voltage so that the speeds of the individual particles are influenced so that particles emanating from the point pass through the image plane at approximately one point, reducing the chromatic error.

Corpuscular optical image-forming system

Die Erfindung betrifft den elektronenoptischen Gerätebau und kann bei der Konstruktion korpuskular-optischer Systeme zur Erzeugung visueller Abbildungen von Mikroobjekten eingesetzt werden. Die Vorrichtung weist eine Vakuumkammer auf. In der Kammer befindet sich ein Arbeitstisch mit einer Lichtquelle, sowie, in Bildübertragungsrichtung angeordnet, ein Objektiv, ein dispersiver magnetischer Deflektor, ein Aberrations-Korrektor, eine Übertragungslinsen-Einheit, eine Projektions-Einheit und ein Kompensator der energetischen Winkeldispersion. Die optische Achse ist über den dispersiven magnetischen Deflektor mit den optischen Achsen des Objektivs und des Aberrations-Korrektors gekoppelt. Auf dem Bildübertragungsweg vom ersten magnetischen Deflektor zum Aberrations-Korrektor ist der Kompensator der energetischen Winkeldispersion positioniert. Der Kompensator enthält eine seriell in Bildübertragungsrichtung angeordnete axialsymmetrische Steuerlinsen-Einheit. Die Steuerlinsen-Einheit umfasst mindestens zwei Linsen und ist ausgebildet auf der Basis der Berechnung der Bildübertragung ins Zentrum eines zweiten magnetischen Deflektors, wobei der Koeffizient für die optische Vergrößerung gleich 1 ist, und mit Bildung einer negativen Rückkopplung hinsichtlich der energetischen Winkeldispersion. Das technische Ergebnis ist ein höheres Auflösungsvermögen. The invention relates to the electron-optical device construction and can be used in the construction of corpuscular-optical systems for generating visual images of micro-objects. The device has a vacuum chamber. In the chamber there is a work table with a light source and, arranged in the image transfer direction, a lens, a dispersive magnetic deflector, an aberration corrector, a relay lens unit, a projection unit and a compensator of the energy angle dispersion. The optical axis is coupled via the dispersive magnetic deflector with the optical axes of the objective and the aberration corrector. In the image transmission path ...

Electrostatic corrector

Particle-optical corrector free of sixth-order axial errors and electron microscope with corrector

Die Erfindung betrifft einen teilchenoptischen Korrektor (5) zum Korrigieren von Abbildungsfehlern, wobei der Korrektor (5) ein zentrales Multipolelement (2) der Länge L zur Erzeugung eines Hexapolfeldes (ΨHP2) in der Symmetrieebene (6) des Korrektors (5) sowie zwei äußere identische Multipolelemente (3, 4 ) der Länge L'zur Erzeugung gleich starker Hexapolfelder (ΨHP1, ΨHP3) und zwei Rundlinsendupletts (7 und 8) mit Rundlinsen (7', 7'', 8', 8'') aufweist.Bei einem derartigen Korrektor wird der Dreilappfehler sechster Ordnung (D6) dadurch vermieden, daß die Stärke des zentralen Hexpaolfeldes (ΨHP2) zu den Stärken der beiden gleich starken äußeren Hexpolfelder (ΨHP1,3) derart gewählt ist, daß der dreizählige axiale Astigmatismus (A2) verschwindet und die Stärken (ΨHP1,3) letzterer so gewählt sind, daß der Korrektor (5) insgesamt keinen sechszähligen axialen Astigmatismus (A5) hat, daß der Abstand der Multipolelemente (1 und 3) von den der Symmetrieebene (6) weiter entfernten Rundlinsen (7", 8"), deren Brennweite (f') zuzüglich eines weiteren Abstands (Δz) entspricht, der so gewählt ist, daß für die gegebenen Längen L und L' der axiale Dreilappfehler vierter Ordnung (D4) verschwindet, und daß die Länge (L) des zentralen Multipolelements (2) im Verhältnis zu den Längen (L') der Multipolelemente (1 und 3) derart gewählt ist, daß der axiale Dreilappfehler sechster Ordnung (D6) - für das vorgegebene Verhältnis (M = f / f') der Brennweite (f') der zur Symmetrieebene (6) näheren Rundlinsen (7', 8') zu der Brennweite (f') der zur Symmetrieeiebne (6) weiter entfernten Rundlinsen (7", 8") - verschwindet. The invention relates to a particle-optical corrector (5) for correcting aberrations, the corrector (5) having a central multipole element (2) of length L for generating a hexapole field (ΨHP2) in the plane of symmetry (6) of the corrector (5) and two outer ones has identical multipole elements (3, 4) ...

Anastigmatic deflection system for electron beams - has stigmator, with electron lens system and curved magnet with eight poles

The anastigmatic magnetic electron-deflection system consists of an eight-pole stigmator (1) in line with a circular electron lens (2). One the other side of the lens is a non-coupled deflection system comprising an octopole magnet assembly having a curved axis (4). This assembly also operates as a stigmator and its central axis coincides with that of the electron beam. By suitable choise of current for the octopole, single, double and three-fold fields of any azimuth can be produced. The stigmator has a straight axis and compensates for astigmation due to stray fields and removes any remaining astigmation due to the deflection system. The system provides correction of axial coma error and dispersion error.

Electrostatic device for correcting chromatic aberration in a particle-optical apparatus

Electron-optical rotationally symmetrical lenses inevitably suffer from chromatic aberration which often determines the resolution limit at low acceleration voltages. This lens defect cannot be eliminated by compensation by means of rotationally symmetrical fields. In order to improve the resolution nevertheless, it has aleeady been proposed to correct the chromatic aberration by means of a corrector (28) provided with two correction elements (34, 40). Each correction element consists of a number of quadrupole fields. Using the known corrector, it has been found that the chromatic magnification error is inadmissibly high. In order to solve this problem, the correction elements in the corrector according to the invention are provided with at least five layers of electrodes (60-a, 60-b, 60-c, 60-d) which produce quadrupole fields. Because of the strong periodicity of the electron paths in the correcting quadrupole fields, the chromatic magnification error is limited sufficiently (or even reduced to zero) so as to allow the use of the corrector for practical purposes.

Correction device for correcting the lens defects in particle-optical apparatus

Electron-optical rotationally symmetrical lenses inevitably suffer form spherical and chromatic aberration which often impose a limit on the resolution. These lens defects cannot be eliminated by compensation by means of rotationally symmetrical fields. In order to enhance the resolution nevertheless, it has already been proposed to correct the spherical aberration by means of a correction device provided with two hexapoles (24, 26) and two rotationally symmetrical transmission lens systems (28, 30). Each transmission lens system in the known correction device consists of two lenses. According to the invention, one or both transmission lens systems can be replaced by a respective system (46) of four quadrupoles (48, 50, 52 ,54), without the correction capability being reduced or only hardly so. If the two central quadrupoles (50, 52) of the quadrupole system (46) forming part of the correction device (22) are also arranged to produce electric quadrupole fields, the chromatic aberration of the lens to be corrected can also be corrected.

Electrostatic corrector for eliminating the chromatic aberration of particle lenses

The invention relates to an electrostatic corrector for eliminating the chromatic aberration of particle lenses. The corrector has a straight optical axis and an electrostatic quadrupole for allocating to the objective lens. Two corrector pieces are positioned behind the quadrupole, along the optical axis in the direction of radiation. Each corrector piece has three electrical quadrupole fields with an overlying circular lens field. The quadrupole fields, however, are rotated 90 degrees about the optical axis in relation to each other. This arrangement is adjusted in such a way that the astigmatic first image of one sectional view lies in one corrector piece and the astigmatic first image perpendicular thereto, of the other sectional view, lies in the other corrector piece, with another electrostatic quadrupole being located on the output side.

Electrostatic corrector

The invention relates to an electrostatic corrector based on an electrostatic corrector with a rectilinear optical axis (1) and two corrective parts (8, 9), which are arranged one behind the other along the optical axis and have respective quadrupole fields and superimposed circular lens fields. The astigmatic intermediate image of one cross-section that is created by an axis point lies in one corrective part and the astigmatic intermediate image of the other cross-section, which is perpendicular to said first cross-section, lies in the other corrective part. The aim of the invention is to eliminate the chromatic aberration of particle lenses. To achieve this, the invention provides a corrector comprising two corrective units with a similar instrumental construction, each having one of the corrective parts, on whose respective input and output sides two additional electrostatic quadrupoles are located. Said corrective units represent the axial paths in a telescopic manner in a 1:1 representation. According to the invention, the two corrective units are arranged one behind the other along the optical axis and are rotated by 90° about the optical axis in relation to one another.

Particle optical corrector

The invention relates to a corrector with a straight optical axis for eliminating color and aperture aberrations in optical particle lenses. Said corrector is equipped with multipole elements in the form of electric and/or magnetic quadrupole and octupole elements. According to the invention, at least twelve quadrupole elements and ten octupole elements should be provided, wherein three quadrupole elements and two octupole elements of said elements are assembled into a group. The groups are arranged successively along the optical axis, wherein a first symmetrical plane is defined between the first and the second group, a second symmetrical plane is defined between the second and third group and a third symmetrical plane is defined between the third and fourth group. The multipole elements from one group to another correspond to each other in pairs, wherein the multipole elements of the corresponding following group are positioned in reverse order along the optical axis in comparison with the corresponding multipole elements of the preceding group. The structure and refractive powers of the multipole elements that correspond to each other are mirror-symmetrically configured relative to the corresponding symmetrical plane between the groups. At least two of the above-mentioned quadrupole elements generate electric-magnetic quadrupole fields, wherein said quadrupole elements are preferably arranged in a mirror-symmetrical manner relative to the second or to all symmetrical planes. In addition to the above-mentioned octupole elements, another such element is arranged in the first and third symmetrical planes. The corrector enables the transmission of extremely large image fields while the optical quality remains the same due to the fact that image aberrations outside the axis can be corrected.

Aberration-corrected charged-particle optical apparatus

Aberration-corrected charged-particle optical apparatus improving the resolution of charged-particle optical systems by eliminating or minimizing optical aberrations. The apparatus comprises a source of charged particles and a plurality of charged-particle lenses including non-round lenses, energized in such manner so as to correct axial aberrations of orders up to and including fifth order. The non-round lenses comprise quadrupoles and octupoles disposed in such manner that fifth order combination aberrations are precisely controlled in addition to third order aberrations. The resultant apparatus very significantly improves on resolution attainable with non-aberration corrected charged-particle round lenses. It also improves on resolution attainable with correctors of third order aberrations only.

Aberration correction device and method for operating same

The present invention provides an aberration correction device (100). The aberration correction device comprises a Wien filter element (110), a quadrupole element (310) for compensating a focusing property of the Wien filter element (110), and at least one multipole element (410) for spherical aberration correction. The Wien filter element (110) and said quadrupole element (310) are adapted to generate, in combination, an astigmatic image. Furthermore, the at least one multipole element (410) is adapted to act essentially in a plane of sagittal or meridional focus of the astigmatic image. Thereby, chromatic aberration is reduced as well as spherical aberration can be corrected.

Distortion free stigmation of a TEM

A charged particle apparatus is equipped with a third stigmator positioned between the objective lens and a detector system, as a result of which a third degree of freedom is created for reducing the linear distortion. Further, a method of using said three stigmators, comprises exciting the first stigmator to reduce astigmatism when imaging the sample, exciting the second stigmator to reduce astigmatism when imaging the diffraction plane, and exciting the third stigmator to reduce the linear distortion.

Method of use for a multipole detector for a transmission electron microscope

The invention relates to a method for correcting distortions introduced by the projection system ( 106 ) of a TEM. As known to the person skilled in the art distortions may limit the resolution of a TEM, especially when making a 3D reconstruction of a feature using tomography. Also when using strain analysis in a TEM the distortions may limit the detection of strain. To this end the invention discloses a detector equipped with multipoles ( 152 ), the multipoles warping the image of the TEM in such a way that distortions introduced by the projection system are counteracted. The detector may further include a CCD or a fluorescent screen ( 151 ) for detecting the electrons.

Corrector for axial aberrations of a particle-optical lens

Commercially available High Resolution Transmission Electron Microscopes (HR-TEM) and Scanning Transmission Electron Microscopes (HR-STEM) are nowadays equipped with correctors for correcting the axial spherical aberration C s of the so-named objective lens. Inevitably other aberrations become the limiting aberration. For the hexapole type correctors, also known as Rose correctors, or variants thereof, six-fold axial astigmatism, also known as A5, and sixth-order three lobe aberration, also known as D6, introduced by the corrector, are known to become the limiting aberration. The invention shows that by adding a weak hexapole ( 126 ) in the cross-over between the hexapoles, a Rose like corrector or a Crewe like corrector free of A5 or D6 can be made, or, by adding both the weak hexapole and a dodecapole, a corrector that is free of both A5 and D6.

Corrector for the correction of chromatic aberrations in a particle-optical apparatus

The invention describes a corrector for the correction of chromatic aberrations in a particle lens, such as used in a SEM or a TEM. So as to reduce the stability demands on the power supplies of such a corrector, the energy with which the particle beam passes through the corrector is lower than the energy with which the beam passes through the lens to be corrected.

Chromatic aberration correction device and electron microscope

Vorrichtung (100) zur Korrektur chromatischer Aberration zur Verwendung mit einem Elektronenmikroskop (10), wobei die Vorrichtung (100) zur Korrektur chromatischer Aberration aufweist:ein erstes Multipol-Element (110) zum Erzeugen eines ersten elektromagnetischen Felds; undein zweites Multipol-Element (120) zum Erzeugen eines zweiten elektromagnetischen Felds;wobei das erste Multipol-Element (110) einen ersten Teil (110a), einen zweiten Teil (110b) und einen dritten Teil (110c) aufweist, welche entlang einer optischen Achse (OA) angeordnet sind;wobei jeder des ersten Teils (110a), des zweiten Teils (110b) und des dritten Teils (110c) eine Dicke in der Laufrichtung eines Elektronenstrahls (EB) hat und ein Quadrupolfeld erzeugt, in welchem ein elektrisches Quadrupolfeld und ein magnetisches Quadrupolfeld überlagert sind; dadurch gekennzeichnet, dassim ersten Teil (110a) das elektrische Quadrupolfeld stärker als das magnetische Quadrupolfeld eingestellt ist;im zweiten Teil (110b) das magnetische Quadrupolfeld stärker als das elektrische Quadrupolfeld eingestellt ist; undim dritten Teil (110c) das elektrische Quadrupolfeld stärker als das magnetische Quadrupolfeld eingestellt ist;wobei der zweite Teil (110b) eine Zweifach-Astigmatismus-Komponente erzeugt, welche den durch den ersten (110a) und den dritten Teil (110c) erzeugten Zweifach-Astigmatismus-Komponenten im Vorzeichen entgegengesetzt ist; undwobei das zweite elektromagnetische Feld bezüglich des ersten elektromagnetischen Felds um 90 Grad um die optische Achse (OA) verdreht ist;wobei das erste Multipol-Element (110) mehrere sich vom ersten Teil (110a) zum dritten Teil (110c) erstreckende Elektroden (112a...d) aufweist und wobei die Elektroden (112a....d) in jedem des ersten Teils (110a), des zweiten Teils (110b) und des dritten Teils (110c) einheitliche elektrische Quadrupolfelder erzeugen. An apparatus (100) for correcting chromatic aberration for use with an electron microscope (10), the apparatus (100) for ...

Optical particle corrector

The invention relates to a corrector with a straight optical axis for eliminating color and aperture aberrations in optical particle lenses. Said corrector is equipped with multipole elements in the form of electric and/or magnetic quadrupole and octupole elements. According to the invention, at least twelve quadrupole elements and ten octupole elements should be provided, wherein three quadrupole elements and two octupole elements of said elements are assembled into a group. The groups are arranged successively along the optical axis, wherein a first symmetrical plane is defined between the first and the second group, a second symmetrical plane is defined between the second and third group and a third symmetrical plane is defined between the third and fourth group. The multipole elements from one group to another correspond to each other in pairs, wherein the multipole elements of the corresponding following group are positioned in reverse order along the optical axis in comparison with the corresponding multipole elements of the preceding group. The structure and refractive powers of the multipole elements that correspond to each other are mirror-symmetrically configured relative to the corresponding symmetrical plane between the groups. At least two of the above-mentioned quadrupole elements generate electric-magnetic quadrupole fields, wherein said quadrupole elements are preferably arranged in a mirror-symmetrical manner relative to the second or to all symmetrical planes. In addition to the above-mentioned octupole elements, another such element is arranged in the first and third symmetrical planes. The corrector enables the transmission of extremely large image fields while the optical quality remains the same due to the fact that image aberrations outside the axis can be corrected.

Optical particle corrector

An optical particle corrector with a straight optical axis for eliminating color and aperture aberrations in optical particle lenses includes multipole elements in the form of electric and/or magnetic quadrupole and octupole elements. There are at least twelve quadrupole elements and ten octupole elements, in which three quadrupole elements and two octupole elements are assembled into a group. These groups are arranged successively along the straight optical axis, in which a first symmetrical plane is defined between the first and second groups, a second symmetrical plane is defined between the second and third groups and a third symmetrical plane is defined between the third and fourth groups. The multipole elements from one group to another correspond to each other in pairs, in which the multipole elements of the corresponding following group are positioned in reverse order along the straight optical axis in comparison with the corresponding multipole elements of the preceding group. The structure and refractive powers of the multipole elements that correspond to each other are mirror-symmetrically configured relative to the corresponding symmetrical plane between the groups. At least two of the quadrupole elements generate electric-magnetic quadrupole fields, in which the quadrupole element are, preferably, arranged in a mirror-symmetrical manner relative to the second, or to all, symmetrical planes. An additional octupole element is arranged in the first and third symmetrical planes. The corrector enables the transmission of extremely large image fields, while the optical quality remains the same due to the fact image aberrations outside the axis can be corrected.

Aberration correction device and method for operating same

The present invention provides an aberration correction device (100). The aberration correction device comprises a Wien filter element (110), a quadrupole element (310) for compensating a focusing property of the Wien filter element (110), and at least one multipole element (410) for spherical aberration correction. The Wien filter element (110) and said quadrupole element (310) are adapted to generate, in combination, an astigmatic image. Furthermore, the at least one multipole element (410) is adapted to act essentially in a plane of sagittal or meridional focus of the astigmatic image. Thereby, chromatic aberration is reduced as well as spherical aberration can be corrected.

Aberration correction device and method for operating same

The present invention provides an aberration correction device. The aberration correction device comprises a Wien filter element, a quadrupole element for compensating a focusing property of the Wien filter element, and at least one multipole element for spherical aberration correction. The Wien filter element and said quadrupole element are adapted to generate, in combination, an astigmatic image. Furthermore, the at least one multipole element is adapted to act essentially in a plane of sagittal or meridional focus of the astigmatic image. Thereby, chromatic aberration is reduced as well as spherical aberration can be corrected.

Corrector

A corrector ( 10 ) for an electron microscope is proposed which is less sensitive to fluctuations of the electrical power supply if a stigmatic intermediate image ( 9 ) of the axial fundamental rays (x α , y β ) is produced in the quadrupole field ( 1 ′) of a first quadrupole element ( 1 ) and this quadrupole field ( 1 ′) is set such that astigmatic intermediate images ( 12, 13 ) of the off-axial fundamental rays (x γ , y δ ) are produced in the region of the center of the quadrupole fields ( 3′, 4 ′) of a third ( 3 ) and fourth multipole element ( 4 ) and there also, due to the setting of the quadrupole field ( 2 ′) of a second quadrupole element ( 2 ), the axial fundamental rays (x α , y β ) of the same section (x, y) as that, in which the intermediate images ( 12, 13 ) of the off-axial fundamental rays (x γ , y δ ) are located, each exhibit a maximum.

Corrector

Die Erfindung betrifft einen Korrektor (10) für die Farb- und Öffnungsfehlerkorrektur bei einem Elektronenmikroskop mit im Strahlengang (7) nacheinander symmetrisch zu einer Symmetrieebene (8) angeordneten sechs Multipolelementen (1, 2, 3, 4, 5, 6), von denen alle zur Erzeugung von Quadrupolfeldern (1', 2', 3', 4', 5', 6') und das dritte (3) und vierte (4) auch zur Erzeugung von Oktupolfeldern (3", 4") dienen, wobei letztere gleichgerichtet und die Quadrupolfelder (1', 2', 3', 4', 5', 6') aller sechs Multipolelemente (1, 2, 3, 4, 5, 6) von einem zum nächsten um 90° gedreht und bezüglich Ihrer Feldstärken punktsymmetrisch zum Schnittpunkt der optischen Achse (11) mit der Symmetrieebene (8) sind, wobei durch das Zusammenwirken der als magnetische und elektrische Felder (3', 4') ausgebildeten Quadrupolfelder (3', 4') des dritten (3) und vierten (4) Multipolelements eine Farbfehlerkorrektur sowie mittels der Quadrupolfelder (1', 2', 3', 4', 5', 6') und der Oktupolfelder (3", 4") eine Öffnungsfehlerkorrektur möglich ist. The invention relates to a corrector (10) for the color and aperture error correction in an electron microscope with six multipole elements (1, 2, 3, 4, 5, 6) successively symmetrical to a symmetry plane (8) in the beam path (7), of which all for generating quadrupole fields (1 ', 2', 3 ', 4', 5 ', 6') and the third (3) and fourth (4) are also for generating octupole fields (3 ", 4"), wherein the latter rectified and the quadrupole fields (1 ', 2', 3 ', 4', 5 ', 6') of all six multipole elements (1, 2, 3, 4, 5, 6) rotated from one to the next by 90 ° and with respect Their field strengths are point-symmetrical to the point of intersection of the optical axis (11) with the plane of symmetry (8), the quadrupole fields (3 ', 4') of the third (3) being formed by the interaction of the magnetic ...

Corrector

The invention concerns a corrector (9) for chromatic and aperture aberration correction in an electron microscope with six multipoles (1, 2, 3, 4, 5, 6) which are disposed in the optical path (7) one after the other symmetrically with respect to a symmetry plane (8) for generating quadrupole fields (1′, 2′, 3′, 4′, 5′, 6′) and octupole fields, wherein the quadrupole fields (1′, 2′, 3′, 4′, 5′, 6′) of all six multipoles (1, 2, 3, 4, 5, 6) are consecutively rotated through 90° with respect to one another, thereby generating a mirror-symmetrical exchange symmetry of the axial fundamental rays (xα, yβ). In accordance with the invention, the following is provided for correcting azimuthal coma: A double multipole (10) with a multipole element (11) upstream of the symmetry plane (8) and a multipole element (12) downstream of the symmetry plane (8), which generates two octupole fields (11′, 12′) of the same orientation as the quadrupole fields (1′, 2′, 3′, 4′, 5′, 6′) and two further octupole fields (11″, 12″), which have opposite poles and exert a force on the electrons in a direction rotated through 90° with respect to the above-mentioned octupole fields (11′, 12′) in the principal sections (x, y). The six multipoles (1, 2, 3, 4, 5, 6) generate octupole fields (1″, 2″, 3″, 4″, 5″, 6″) with the same orientation, and the adjustment of the poles and of the field strengths of the octupole fields (1″, 2″, 3″, 4″, 5″, 6″, 1″, 12″) is used for the above-mentioned correction.

IMAGING CORRECTOR VIENNA TYPE FOR ELECTRONIC MICROSCOPE

Arrangement for correcting the third order aperture error of a lens, in particular the objective lens of an electron microscope

Anordnung zur Korrektur des Öffnungsfehlers dritter Ordnung einer Linse, insbesondere der Objektivlinse eines Elektronenmikroskops, bestehend aus einer Öbjektivlinse (2) und eines in Richtung des Strahlenganges nachgeschalteten Korrektivs (1), welches gebildet wird aus einem ersten und zweiten Hexapol (8, 9), einem dazwischen angeordneten Rundlinsen-Dublett (10, 11) aus zwei Rundlinsen gleicher Brennweite, deren beiderseitiger Abstand dem Doppelten ihrer Brennweite entspricht, von denen sich jede im Brennpunktabstand von der Mittelebene des jeweils benachbarten Hexapols befindet, dadurch gekennzeichnet, daß zwischen Objektivlinse (2) und Korrektiv (1) eine einzige Rundlinse (3) angeordnet ist, die so eingestellt ist, daß zum einen der Strahlengang parallel auf das Korrektiv (1) trifft und zum anderen die komafreie Ebene (6) der Objektivlinse in die komafreie Ebene (7) des Hexapols (8) des Korrektivs (1) abgebildet wird. arrangement for correcting the opening error third order of a lens, in particular the objective lens of a Electron microscope, consisting of a lens lens (2) and a in the direction of the beam path downstream corrective (1), which is formed from a first and second hexapole (8, 9), an interposed circular lens doublet (10, 11) of two Round lenses of the same focal length, the mutual distance of the Duplicate corresponds to their focal length, each of which is at focal distance located from the median plane of each adjacent hexapole, characterized in that between Objective lens (2) and corrective (1) a single round lens (3) arranged which is set so that the one of the beam path parallel to the corrective (1) meets and on the other hand, the coma-free plane (6) of the objective lens in the coma-free Plane (7) of the hexapole (8) of the corrective (1) is mapped.

Electron-optical corrector for an aplanatic imaging system

Rotationally symmetrical, spherically corrected corpuscular beam optical imaging system

Apparatus for correcting chromatic aberration and electron microscope

Eine Vorrichtung zur Korrektur chromatischer Aberration wird angeboten, welche Aberration korrigieren kann, indem sie effizient negative chromatische Aberration erzeugt. Die Vorrichtung zur Korrektur chromatischer Aberration (100) enthält ein erstes Multipol-Element (110) zum Erzeugen eines ersten elektromagnetischen Felds und ein zweites Multipol-Element (120) zum Erzeugen eines zweiten elektromagnetischen Felds. Das erste Multipol-Element (110) enthält einen ersten Teil (110a), einen zweiten Teil (110b) und einen dritten Teil (110c), welche entlang einer optischen Achse (OA) angeordnet sind. Jeder des ersten, zweiten und dritten Teils (110a, 110b, 110c) hat eine Dicke und erzeugt ein Quadrupolfeld, in welchem ein elektrisches Quadrupolfeld und ein magnetisches Quadrupolfeld überlagert sind. Im ersten Teil (110a) ist das elektrische Quadrupolfeld stärker als das magnetische Quadrupolfeld eingestellt. Im zweiten Teil (110b) ist das magnetische Quadrupolfeld stärker als das elektrische Quadrupolfeld eingestellt. Im dritten Teil (110c) ist das elektrische Quadrupolfeld stärker als das magnetische Quadrupolfeld eingestellt. Der zweite Teil (110b) erzeugt eine Zweifach-Astigmatismus-Komponente, welche durch den ersten Teil (110a) und den dritten Teil (110c) erzeugten Zweifach-Astigmatismus-Komponenten im Vorzeichen entgegengesetzt ist. Das zweite elektromagnetische Feld ist bezüglich des ersten elektromagnetischen Felds um 90 Grad um die optische Achse verdreht. A chromatic aberration correction device is offered which can correct aberration by efficiently generating negative chromatic aberration. The device for correcting chromatic aberration (100) contains a first multipole element (110) for generating a first electromagnetic field and a second multipole element (120) for generating a second electromagnetic field. The first multipole element (110) contains a first part (110a), a second part (110b) and a third part (110c), which are arranged along an optical axis (OA). ...

ABERRATION CORRECTOR AND ELECTRONIC MICROSCOPE

Um einen Aberrationskorrektor mit einem großen Aberrationskorrekturbereich, einer einfachen Steuerung, einer hochpräzisen Aberrationskorrektur und geringen Kosten bereitzustellen, umfasst ein Aberrationskorrektor, dessen Mittelachse 201 von einem Elektronenstrahl durchlaufen wird, eine erste Stromleitungsgruppe (101 bis 112), die parallel zu einer optischen Achse an einer Position angeordnet ist, die um R1 von der Mittelachse getrennt ist, und ein erstes Mehrpolfeld anregt, und eine zweite Stromleitungsgruppe (21 bis 32), die parallel zur optischen Achse an einer Position angeordnet ist, die um R2 von der Mittelachse getrennt ist und unabhängig ein zweites Mehrpolfeld anregt, dessen Ordnung und Stärke anders sind als die des ersten Mehrpolfelds. In order to provide an aberration corrector having a large aberration correction range, simple control, high-precision aberration correction, and low cost, an aberration corrector whose center axis 201 is crossed by an electron beam includes a first power line group (101 to 112) parallel to an optical axis at one Position is arranged, which is separated by R1 from the central axis, and a first Mehrpolfeld excites, and a second power line group (21 to 32), which is arranged parallel to the optical axis at a position which is separated by R2 from the central axis and independently excites a second Mehrpolfeld whose order and strength are different than that of the first Mehrpolfelds.

Electron beam anastigmatic magnetic deflection system, method for its operation and application

Chromatic aberration correcting device for correcting electron-optical system, has two multipole lenses for generating quadrupole fields, which are arranged on opposite sides of two relay lenses, each with certain focal length

The chromatic aberration correcting device has two multipole lenses for generating the quadrupole fields, while each of the two relay lenses has a focal length (f). The multipole lenses are arranged on the opposite sides of the relay lenses that are separated by a distance of 2f. The distance between the former multipole lens and the former relay lens is f-delta1, while the distance between the latter relay lens and the latter multipole lens is f-delta2. An auxiliary lens is arranged between the relay lenses. The optical axis is measured along the length between the multipole lenses. An independent claim is included for a method for controlling a chromatic aberration correcting device.

Correction apparatus for removing third-order aperture aberration and first-order first grade (Grade) longitudinal chromatic aberration

Device for determining the composition of gas mixtures

FIELD: chemistry. SUBSTANCE: invention relates to the field of determining the composition of gas mixtures, including carbonaceous, and allows to make qualitative and quantitative analysis of impurities in the main gas. Technical and economic efficiency of the ionization chamber consists in a significant simplification of the construction and the work carried out with its use due to the possibility of recording Penning electrons with characteristic energies for each impurity in the gas and corresponding analysis of these impurities in the local regime. In this case, the dimensions of the ionization chamber for atmospheric pressures will be of the order of several mm, in contrast to the nonlocal regime, When the size of the ionization chamber should be of the order of a micron. By using the supply of an additional electrical impulse signal before the measurement scanning, the measuring electrode will be cleaned from the formation of various thin films, in particular carbon, which will allow to analyze carbon-containing gas mixtures. EFFECT: technical result is an increase in the accuracy and sensitivity of qualitative and quantitative analysis of gas mixtures. 1 cl, 5 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 653 061 C2 (51) МПК H01J 33/02 (2006.01) H01J 47/02 (2006.01) G01N 27/66 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (52) СПК H01J 33/02 (2006.01) (21)(22) Заявка: 2016133775, 17.08.2016 (24) Дата начала отсчета срока действия патента: Дата регистрации: 07.05.2018 (43) Дата публикации заявки: 22.02.2018 Бюл. № 6 (45) Опубликовано: 07.05.2018 Бюл. № 13 2 6 5 3 0 6 1 R U (56) Список документов, цитированных в отчете о поиске: RU 2217739C1, 27.11.2003. US 5532599A, 06.10.1992. US 616303A, 19.12.2000. WO 2012048308A2, 12.04.2012. (54) Устройство для определения состава газовых смесей (57) Реферат: Изобретение относится к области определения несколько мм, в отличие от нелокального режима, состава газовых ...

Charged particle beam equipment

Mapping electron microscope, electron microscope, sample surface observation method, and microdevice manufacturing method

カソード（１）から射出した照射ビーム（４）は、偏向器（３）に入射する。偏向器（３）に電圧が印加された状態では、照射ビーム（４）は、偏向器（３）によって、その光路が変更された後、共通電子光学系（７）を通過して、試料（６）を面照明する。偏向器（３）に電圧が印加されない場合は、照射ビーム（４）は、偏向器（３）を直進して通り抜け、電子吸収板（１７）に吸収される。共通電子光学系（７）を通る際に、照射ビーム（４）は減速され、試料（６）の表面に達した時点ではそのエネルギーは０［ｅＶ］近くになっている。試料（６）に照射ビーム（４）が入射すると試料（６）からは、反射電子（８）が発生する。この反射電子（８）は、共通電子光学系（７）を通って、偏向器（３）に電圧が印加されていなりとき、結像電子光学系（９）を通して、ＭＣＰ検出器（１０）上に投影される。 The irradiation beam (4) emitted from the cathode (1) enters the deflector (3). In a state where a voltage is applied to the deflector (3), the irradiation beam (4) is changed in its optical path by the deflector (3), then passes through the common electron optical system (7), and the sample ( 6) Surface illumination. When no voltage is applied to the deflector (3), the irradiation beam (4) passes straight through the deflector (3) and is absorbed by the electron absorbing plate (17). When passing through the common electron optical system (7), the irradiation beam (4) is decelerated, and its energy is close to 0 [eV] when it reaches the surface of the sample (6). When the irradiation beam (4) is incident on the sample (6), reflected electrons (8) are generated from the sample (6). The reflected electrons (8) pass through the common electron optical system (7) and pass through the imaging electron optical system (9) on the MCP detector (10) when no voltage is applied to the deflector (3). Projected on.

Single stage charged particle beam energy width reduction system for charged particle beam system

The present invention provides a charged particle beam device. The device comprises a first lens (101; 510) generating a crossover a second lens (102; 512) positioned after the crossover and a element acting in a focusing and dispersive manner in an x-z-plane with a center of the element having essentially same z-position as the crossover. Further, a multipole element, which acts in the x-z-plane and a y-z-plane is provided. A first charged particle selection element and a second charged particle selection element are used for selecting a portion of the charged particles. Thereby, e.g. the energy width of the charged particle beam can be reduced.

Single stage charged particle beam energy width reduction system for charged particle beam system

The present invention provides a charged particle beam device. The device comprises a first lens (101; 510) generating a crossover a second lens (102; 512) positioned after the crossover and a element acting in a focusing and dispersive manner in an x-z-plane with a center of the element having essentially same z-position as the crossover. Further, a multipole element, which acts in the x-z-plane and a y-z-plane is provided. A first charged particle selection element and a second charged particle selection element are used for selecting a portion of the charged particles. Thereby, e.g. the energy width of the charged particle beam can be reduced.