Stapelförmiges photonisches III-V-Halbleiterbauelement

Stapelförmiges photonisches III-V-Halbleiterbauelement, aufweisend eine ersten Diodenteilstapel und mindestens eine darüber angeordnete Abfolge aus einem Zwischenschichtstapel und einem weiteren Diodenteilstapel, wobei jeder Diodenteilstapel mindestens eine Spannungsquelle mit einer Bandlückenenergie, eine metallische Vorderseitenkontaktschicht auf der Oberseite und eine metallische Rückseitenkontaktschicht aufweist, jeder Zwischenschichtstapel eine Querleitschicht und eine Barriereschicht aufweist, die Bandlückenenergie jeweils zunimmt, ein Durchmesser des Zwischenschichtstapels größer als ein Durchmesser des Diodenteilstapels derselben Abfolge und kleiner als ein Durchmesser jedes darunter angeordneten Diodenteilstapels ist, die metallische Rückseitenkontaktschicht des Diodenteilstapels jeder Abfolge mit einem ersten Teilbereich der Oberseite des Zwischenschichtstapels stoffschlüssig verbunden sind, die Unterseite des weiteren Diodenteilstapels jeder Abfolge stoffschlüssig mit einem zweiten ...

Lichtelektrischer Wandler

Lichtempfindliches Bauelement mit erhöhter Blauempfindlichkeit, Verfahren zur Herstellung und Betriebsverfahren

Es wird ein lichtempfindliches Bauelement vorgeschlagen, welches einen Halbleiterübergang zwischen einer dünnen relativ hochdotierten epitaktischen Schicht und einem relativ niedrig dotierten Halbleitersubstrat aufweist. Außerhalb eines Lichteinfallsfensters ist zwischen epitaktischer Schicht und Halbleitersubstrat eine isolierende Schicht angeordnet. Die Dicke der epitaktischen Schicht beträgt dabei weniger als 50 nm, sodass ein großer Anteil der im Lichteinfallsfenster einfallenden Lichtquanten im niedrig dotierten Halbleitersubstrat absorbiert werden kann.

Sensors including complementary lateral bipolar junction transistors

A monolithic integrated radiation sensor or dosimeter (and manufacturing method) to detect environmental radiation (e.g ionizing radiation, neutrons) includes a sensing structure (e.g SOI insulating buried oxide layer, BOX 22) and first and second lateral bipolar junction transistors (BJT, LBJT) of opposite polarity (i.e NPN and PNP BJT devices). The first lateral BJT 30 (Q1) acts as the radiation sensor; its base 33 electrically coupled to the sensing structure 22 (e.g BOX 22 or upper oxide 132 fig 5) and produces an output signal as the stored charge changes within sensing structure. The second lateral BJT acts as an amplifier whilst the polarity is such that the ionizing effect is minimized. At least one of the lateral BJTs has an inverted (base) configuration (122 fig 2). The base of the second LBJT amplifier is electrically connected to an output of the first sensing lateral BJT (e.g base/collector). The doping concentration of the base of the second LBJT is higher (e.g by a factor ...

A SEMICONDUCTOR DEVICE

An amorphous semiconductor device comprising a layered structure having a p-amorphous silicon layer, an i-amorphous silicon layer, an n-amorphous silicon layer, an i-amorphous silicon layer and a p-amorphous silicon layer, or an n-amorphous silicon layer, an i-amorphous silicon layer, a p-amorphous silicon layer, an i-amorphous silicon layer and an n-amorphous silicon layer, in sequence, on a substrate, electrodes being disposed on the top layer, the central layer and the bottom layer, respectively.

Dual band infrared photodetector

A two-band infrared radiation detector (2) comprises a mesa-type multi-layered mercury-cadmium-telluride detector structure monolithically integrated on a substrate (6). The detector (2) Is responsive to two discrete wavelength ranges separated by a wavelength range to which the detector (2) is not responsive. The detector (2) further comprises two contact points (12) deposited on the layer disposed furthest away from the entry point of the radiation, the contact points (12) being isolated with respect to each other by a trench (30) disposed to within the layer (28).

An optoelectronic switch

In an optoelectronic switch, a photodiode is used as an optical-to-electrical converter in which a first semiconductor including a p-n junction is combined with a second semiconductor having a narrower energy band gap than the first semiconductor to form a heterojunction. When supplied with a light signal modulated by an electrical signal, the photodiode becomes ON or OFF depending upon the magnitude of a reverse bias voltage applied to said photodiode. A source for applying the bias voltage to the photodiode comprises two voltage sources of the same polarity or a single voltage source. The optoelectronic switch, has a high isolation ratio and broad transmission bandwidth, consumes little electrical power and produces low cross-talk levels when used in switching arrays.

PHOTODIODE

SEMICONDUCTOR DEVICE

Electrically adjusted Ge-based double-heterojunction deep ultraviolet (DUV)-near infrared (NIR) dual-band photodetector and preparation method thereof

Double-heterojunction deep ultraviolet (DUV)-near infrared (NIR) dual-band photodetector comprising an n-type Ge base 2, a PdTe2 thin film 5, and a Cs3Cu2I5 thin film 6. The Cs3Cu2I5 thin film 6 may be applied by spin-coating. The PdTe2 thin film 5 may be formed by thermally assisted conversion. A base electrode 1 comprising an In-Ga alloy or Ag may be provided on a lower surface of the n-type Ge base 2. An insulating layer 3 comprising silicon dioxide, silicon nitride, aluminium oxide or hafnium oxide may cover 1⁄4 to 1⁄2 of an upper surface of the n-type Ge base 2 by magnetron sputtering. A contact electrode 4 comprising Au, Pt or Pd may be provided on the insulating layer 3 by electron beam coating.

UNIPOLAR SEMICONDUCTOR PHOTO DETECTOR WITH SUPPRESSED DARK CURRENT

Asymmetrical Phototransistor

PHOTOELECTRIC CONVERTER

A photoelectric converter comprising a photosensor element, a typical example of the photosensor element comprising: a transistor including an n or n+ collector region an n region disposed contiguous to the collector region, a p base region disposed contiguous to the n- region, an n+ emitter region disposed contiguous to the base region, and a first electrode connected to the emitter region; and a storage capacitor constituted by the base region, an electrically insulating region disposed contiguous to the base region, and a second electroce connected to the electrically insulating region; whereby the base region is held in a floating state. A photogenerated charge is stored in the base region by controlling the potential of the base region and an electric signal corresponding to the charge stored in the base region is subsequently output from the first electrode.

SEMICONDUCTOR DEVICE HAVING A PASSIVATING LAYER

Semiconductor device having a passivating layer to reduce and stabilise the surface recombination rate. The device is characterized on the one hand in that an active region is covered by a passivating layer of polycrystalline semiconductor material which has the same conductivity type as and preferably approximately the same impurity concentration as the region, and on the other hand in that the energy gap of the material of the layer is preferably at least 80 millielectron volts larger than that of the material of the region. The invention may be applied to semiconductor devices operating via injection of minority charge carriers in particular in optoelectronic devices.

DEMULTIPLEXING PHOTODETECTOR

... : A 3-terminal totally integrated demultiplexing photodiode is disclosed wherein information present simultaneously at two wavelengths can be developed into two separate currents available at the three terminals. Two quaternary n-type layers of indium gallium arsenide phosphide having unequal bandgaps and each having a pn junction are separated by a layer of n-type indium phosphide. The device is oriented so as to present the incoming radiation first to the quaternary layer having the larger bandgap and then to the quaternary layer having the lower bandgap. One of the contacts is attached to the top layer of n-type indium phosphide, a second contact is attached to a central p-type region established in the top layer of indium phosphide and penetrating through to the top quaternary layer, and the third contact is connected either to the indium phosphide substrate or to a p-type outer region that surrounds all of the layers. By reversing the dc potential applied to the junctions in the quaternary ...

PHOTODIODE STRUCTURE HAVING AN ENHANCED BLUE COLOR RESPONSE

IMPROVED PHOTODIODE STRUCTURE HAVING AN ENHANCED BLUE COLOR RESPONSE Image detectors and scanners employing n+ - p photodiodes as the photosensitive element tend to have a low blue color response relative to the red color output due to loss of photogenerated carriers near the diode surface because of surface recombination, and because of a small minority carrier lifetime due to the high doping level of the n-region relative to the acceptor doping density of the substrate. The surface recombination and low lifetime cause loss of quantum efficiency at wavelengths less than 4200 .ANG., which is the blue region. An improved photodiode is provided including a silicon p substrate, a junction formed by a phosphorous diffusion of low doping density, and a high dose of arsenic or phosphorous ion implantation to provide a shallow implant to create a built-in electric field which repels the photogenerated minority carriers away from the surface and towards the junction to be collected.

PHOTOELECTRIC CONVERTER

Strahlungsregistrierende Halbleiteranordnung mit einem Phototransistor

Ultraviolet light sensor.

PHOTODIODE HAS THREE ZONES DOPEES, PHOTODETECTOR INCORPORATING a TELLEPHOTODIODE AND PROCESS OF ORDERING Of SUCH a PHOTODETECTOR

Une photodiode comprend trois zones dopées (1-3) superposées : une première zone dopée (1) adjacente à une surface (S) d'un substrat semiconducteur (100), une deuxième zone dopée intermédiaire (2) et une troisième zone dopée (3) en contact avec le volume du substrat (100). Le volume du substrat (100) et la deuxième zone dopée (2) forment respectivement une première et une seconde électrodes de la photodiode. La photodiode comprend en outre une troisième électrode en contact avec la première zone dopée (1). La troisième électrode comprend une portion intermédiaire (4) d'un premier matériau conducteur électrique disposée au contact de la première zone dopée (1), et une portion de connexion externe (5) d'un second matériau conducteur électrique disposée au contact de la portion intermédiaire (4).

TRANSISTOR TRANSMITTER-RECEIVER OF LIGHT FOR TELECOMMUNICATIONS TO THE ROTATION ON FIBEROPTIC

STRUCTURE OF PHOTODIODE AMELIOREE GIVING AN ANSWER BLUE COLOR RENFORCEE

Transistor for optics-electronics purpose

DEVICE SEMICONDUCTOR PROVIDED With a PROTECTIVE FILM

PHOTOSENSOR HAS MULTIPLE SPECTRA, IN PARTICULAR FOR THE OPTICAL CHARACTER READING OF CHARACTERS

IMAGING DEVICE WITH FILTERING THE INFRARED RADIATION.

PHOTODIODE HAS SEMICONDUCTOR

PHOTODETECTOR ON SOI

PHOTOTRANSISTOR DEVICE

The present disclosure provides a heterostructure bipolar phototransistor configured for providing an output signal in response to an external impinging light beam. The heterostructure bipolar phototransistor comprises an emitter region and a collector region being doped so that they are of the same conductivity type; a base region interposed between the emitter region and the collector region, the base region being doped so that it is of the opposite conductivity type than the emitter region and the collector region; and an absorption region interposed between the base region and the collector region, wherein the absorption region comprises (or is formed of) a superlattice.

QUANTUM TUNNELING PHOTODETECTOR ARRAY

A quantum tunneling photodetector array and a method of generating an image. The photodetector array comprises an array of pairs of opposing first and second electrodes; a photo-sensitive insulating material disposed between the opposing first and second electrodes of the respective pairs; an electrical circuit for detecting photo-assisted quantum tunneling currents between the opposing first and second electrode of the respective pairs.

HETEROJUNCTION BIPOLAR TRANSISTOR HAVING THINNED BASE-COLLECTOR DEPLETION REGION

A heterojunction bipolar transistor includes a substrate that supports an emitter layer, a base layer and a collector layer. The collector layer is made thin, in combination with a reduction in a base-collector area in order to reduce capacitance, and is made from a wide band gap material that exhibits a high breakdown voltage. Preferably the collector layer is an intrinsic semiconductor material, such as intrinsic InGap having a thickness of about 90 nm. The collector is thinned to reduce the probability of scattering, enabling electrons to be accelerated to higher kinetic energies due to an electrical field applied to a base-collector depletion region and one present in a base-collector junction. The reduced probability of scattering enables electrons to exhibit velocity overshoot, whereby non-equilibrium electrons are accelerated beyond their saturation velocity. In one preferred embodiment (a collector up embodiment) the collector layer is coupled to a Schottky metal collector contact ...

Trench gate type insulated gate bipolar transistor

A trench gate type IGBT includes: a first semiconductor layer; a second semiconductor on the first semiconductor layer; a third semiconductor on the second semiconductor layer; trenches for separating the third semiconductor layer into first regions and second regions; a gate insulation film on an inner wall of each trench; a gate electrode on the gate insulation film; a fourth semiconductor layer in a surface portion of each first region and contacting each trench; a first electrode connecting to the first region and the fourth semiconductor layer; and a second electrode connecting to the first semiconductor layer. The first regions and the second regions are alternately arranged. Two second regions are continuously connected together to be integrated into one body.

Method of fabricating a Si/SiC amorphous heterojunction photo transistor

A heterojunction amorphous SiC/Si phototransistor with the structure of Al/n+ a-SiC/i a-SiC/p+ a-SiC/i a-Si/n+ a-SiC is provided. This new device has a very thin a-SiC base (100Å) and a-SiC emitter, which provides an effective barrier to accumulate more photo generated holes at the base and therefore improves the gain significantly. An optical gain of 40 was obtained at an incident power of 5 μw. This device has very promising applications as a flat panel display transistor, a phototransistor in photosensing element/array, and photo coupler to replace the p-i-n photodiode.

Conductive isolation between phototransistors

Disclosed are phototransistors, and more specifically a detector that includes two or more phototransistors, conductively isolated from each other. Embodiments also relate to methods of making the detector.

Optically activated back-to-back PIN diode switch having exposed intrinsic region

The optoelectronic switch of the present invention comprises two PIN diodes connected in series with opposed polarity having their intrinsic regions coupled to a light source for maintaining both diodes in the conductive state while the light source is on and in the non-conductive state while the light source is off.

Photo transistor

Photo transistor, including a semiconductor body having a surface, a region placed on the surface of the body being intended for light exposure having an edge and a remainder of the region, a collector zone placed in the body and having at least a part thereof emerging to the surface of the body, a base zone being embedded in a planar manner in the collector zone and having at least a part thereof emerging to the surface of the body, an emitter zone being embedded in a planar manner in the base zone, an emitter electrode disposed on the emitter zone, an insulating layer covering the region intended for exposure, an auxiliary zone being embedded in the surface of the body and having a conductivity type being opposite to that of the collector zone, an auxiliary electrode being placed on the insulating layer and overlapping at least the part of the base zone emerging to the surface and the auxiliary zone and covering the part of the collector zone emerging to the surface, the insulating layer ...

Avalanche Photo-Transistor

Methods and devices for an avalanche photo-transistor. In one aspect, an avalanche photo-transistor includes a detection region configured to absorb light incident on a first surface of the detection region and generate one or more charge carriers in response, a first terminal in electrical contact with the detection region and configured to bias the detection region, an interim doping region, a second terminal in electrical contact with the interim doping region and configured to bias the interim doping region, a multiplication region configured to receive the one or more charge carriers flowing from the interim doping region and generate one or more additional charge carriers in response, a third terminal in electrical contact with the multiplication region and configured to bias the multiplication region, wherein the interim doping region is located in between the detection region and the multiplication region.

Sealed nitride layer for integrated circuits

The present invention relates to an integrated circuit. The integrated circuit includes a substrate, at least one device region formed in the substrate, a patterned layer of oxide, a first and second layer of nitride and at least one metal contact region. The patterned layer of oxide is formed over a surface of the substrate, wherein the patterned layer provides at least one opening to the surface of the substrate adjacent the at least one device region. The first layer of nitride is formed over the patterned oxide layer. The second nitride layer is formed along sidewalls to the at least one opening. The patterned oxide layer is sealed with the first and second nitride layers. The at least one metal contact region is formed in the at least one opening.

Method And System For Germanium-On-Silicon Photodetectors Without Germanium Layer Contacts

Methods and systems for germanium-on-silicon photodetectors without germanium layer contacts are disclosed and may include, in a semiconductor die having a photodetector, where the photodetector includes an n-type silicon layer, a germanium layer, a p-type silicon layer, and a metal contact on each of the n-type silicon layer and the p-type silicon layer: receiving an optical signal, absorbing the optical signal in the germanium layer, generating an electrical signal from the absorbed optical signal, and communicating the electrical signal out of the photodetector via the n-type silicon layer and the p-type silicon layer. The photodetector may include a horizontal or vertical junction double heterostructure where the germanium layer is above the n-type and p-type silicon layers. An intrinsically-doped silicon layer may be below the germanium layer between the n-type silicon layer and the p-type silicon layer. A top portion of the germanium layer may be p-doped.

Photodiode having three doped regions, photodetector incorporating such a photodiode and method of operating such a photodetector

A photodiode comprises three superposed doped regions, namely a first doped region adjacent to a surface (S) of a semiconductor substrate, an intermediate second doped region and a third doped region in contact with the bulk of the substrate. The bulk of the substrate and the second doped region form first and second electrodes of the photodiode, respectively. The photodiode furthermore includes a third electrode in contact with the first doped region. The third electrode comprises an intermediate portion of a first electrically conducting material, placed in contact with the first doped region, and an external connection portion of a second electrically conducting material, placed in contact with the intermediate portion.

ELECTRICALLY MODULATED IR SENSITIVE PHOTODIODE AND ITS INTEGRATION IN CMOS

Electrically modulatable photodiode, comprising a substrate having a first and a second p-n junction, a common contact for jointly contacting the p or n dopings of the two p-n junctions, and two further contacts for separately contacting the other doping of the p and n dopings of the two p-n junctions, and a circuit, wherein the circuit is designed to measure a current flow caused by charge carriers which have been generated by impinging radiomagnetic waves in the substrate and which have reached the first further contact, and to switch the second further contact at different times to at least one first and one second switching state, wherein in the first switching state the second further contact is switched to the floating state and in the second switching state a potential is applied, and wherein a blocking voltage applied between the common contact and the first further contact is constant.

Semiconductor device having an insulated gate bipolar transistor and a free wheel diode

A p-type collector region of an IGBT and an n-type cathode region of a free wheel diode are alternately formed in a second main surface of a semiconductor substrate. A back electrode is formed on the second main surface so as to be in contact with both of the p-type collector region and the n-type cathode region, and has a titanium layer, a nickel layer and a gold layer that are successively stacked from the side of the second main surface. A semiconductor device capable of obtaining a satisfactory ON voltage in any of conduction of an insulated gate field effect transistor and conduction of the free wheel diode as well as a manufacturing method thereof can thus be obtained.

METHOD FOR FABRICATING A HETEROJUNCTION SCHOTTKY GATE BIPOLAR TRANSISTOR

Certain embodiments of the present invention may be directed to a transistor structure. The transistor structure may include a semiconductor substrate. The semiconductor substrate may include a drift region, a collector region, an emitter region, and a lightly-doped/undoped region. The lightly-doped/undoped region may be lightly-doped and/or undoped. The transistor structure may also include a heterostructure. The heterostructure forms a heterojunction with the lightly-doped/undoped region. The transistor structure may also include a collector terminal. The collector terminal is in contact with the collector region. The transistor structure may also include a gate terminal. The gate terminal is in contact with the heterostructure. The transistor structure may also include an emitter terminal. The emitter terminal is in contact with the lightly-doped/undoped region and the emitter region.

Impurity band conduction semiconductor devices

Semiconductor photosensitive device

A semiconductor device having a photo diode which has substantially the same sensitivity to a plurality of light having different wavelengths, comprising a first conductivity type semiconductor layer and a second conductivity type semiconductor layer formed at a surface layer portion of said first conductivity type semiconductor layer, wherein the sensitivity to light of a first wavelength and the sensitivity to light of a second wavelength which is different from said first wavelength are made substantially the same by designing a region in which a depletion layer spreads from a junction of said first conductivity type semiconductor layer and said second conductivity type semiconductor layer when an inverse bias is applied to said first conductivity type semiconductor layer and said second conductivity type semiconductor layer, for example, by designing it to spread in a region of 3 to 6 µm or a region of 2 to 7 µm from the surface of the second conductivity type semiconductor layer in ...

SEMICONDUCTOR DEVICE

Интегральная схема быстродействующего матричного приемника оптических излучений

ПОЛУПРОВОДНИКОВАЯ СТРУКТУРА, ИМЕЮЩАЯ АКТИВНЫЕ ЗОНЫ

... 1. Имеющая активные зоны полупроводниковая структура в виде многоволнового диода, излучающего или поглощающего определенное число длин световых волн, такого как светодиод или фотодиод (10, 16, 24, 26, 36, 46, 54, 68, 74, 80), содержащая подложку (SUB) с, по меньшей мере, двумя активными зонами (AZ1-AZn), каждая из которых эмитирует или поглощает излучение разной длины волны, причем первая (нижняя) активная зона (AZ1) выращена на поверхности подложки (SUB), по меньшей мере, одна дополнительная (верхняя) активная зона (AZ1-AZn) выращена эпитаксиально, и при этом активные зоны (AZ1-AZn) последовательно соединены от нижней активной зоны (AZ1) до верхней активной зоны (AZn) посредством, по меньшей мере, одного разделительного слоя (TD1-TDn), служащего в качестве низкоомного сопротивления, причем этот разделительный слой (TD1-TDn) выполнен как обратнополяризованный np- или pn-переход в виде разделительного диода или туннельного диода, причем между нижней активной зоной (AZ1) и верхней активной ...

Способ оценки инерционных свойств фототриодов

OPTOELEKTRONISCHER SCHALTER

Phototransistor

Photoelektrischer Umformer.

INFRARED DETECTORS

PHOTOELECTRIC CONVERSION APPARATUS

PHOTOELECTRIC CONVERSION APPARATUS

A SEMICONDUCTOR DEVICE WITH INCREASED BREAKDOWN VOLTAGE

A semiconductor body (1) has a portion (2a) of one conductivity type adjacent one major surface (3). A first active device region (4) forms with the said portion (2a) a first pn junction (5) which terminates at the one major surface (3) and is reverse-biassed in at least one mode of operation of the device. A second active device region (6) provided within the first active device region (4) forms with the first active device region (4) a second pn junction (7) terminating at the one major surface (3). One or more further regions (8) of the opposite conductivity type are provided with the said portion (2a) adjacent the one major surface (3) surrounding and spaced from the first pn junction (5) to lie within the spread of the depletion region when the first pn junction (5) is reverse-biassed in the at least one mode of operation. An additional region (9) of the opposite conductivity type is provided between and spaced from the first pn junction (5) and an inner one (8a) of the further regions ...

PHOTOTRANSISTORS

SEMICONDUCTOR DEVICE HAVING A PASSIVATING LAYER

HETEROJUNCTION TRANSISTOR

... 1524339 Transistors SOC ANON COMPAGNIE GENERALE D'ELECTRICITE 13 May 1977 [20 May 1976] 20179/77 Heading H1K In a transistor having a heterojunction as the emitter junction a portion 20 of the base region 6 spaced from the emitter region 8 is caused to have a resistivity at least 1000 times greater than that of the active base portion by the presence of crystalline defects in the portion 20. The defects may be introduced into the base portion 20 by implantation of hydrogen ions. Preferred materials for the various regions, and a preferred manufacturing sequence, are disclosed. The transistor may be a phototransistor having no base contact.

PHOTOELECTRIC CONVERSION DEVICE

Improvements in or relating to phototransistors

... 1,109,451. Semi-conductor devices. SIEMENS A.G. 11 Aug., 1965 [12 Aug., 1964], No. 34318/65. Heading H1K. A photo-transistor is arranged so that the radiation passes through part of the collector region and is incident on the collector junction. As shown, Fig. 2, a photo-transistor is produced by masking part of one face of a silicon or germanium wafer 11 with silicon dioxide and diffusing impurities into the exposed parts of the wafer to form base region 12 and collector region 13. Part of the oxide mask is removed to accommodate emitter electrode 14, the remaining part 16 of the mask forming a protective covering for the edges of the junctions. The collector electrode comprises a vapour deposited metal spot 15 or a vapour deposited metal network covering the collector region. In another embodiment, Fig. 1 (not shown), base and collector regions (2) and (3) respectively, are diffused into a surface of an N-type wafer (1) and are etched to form a mesa. The wafer is mounted on the gold-plated ...

Heterojunction bipolar transistor having thinned base-collector depletion region

A switching device

Position sensitive photo detector

IMPURITY BAND CONDUCTION SEMICONDUCTOR DEVICES

A semiconductor diode is designed to operate at a temperature where the thermal generation of free charge carriers is negliglble. The diode includes a first semiconducting layer with a sufficient concentration of first conductivity type impurities to exhibit metallic type conductivity, a second semiconducting layer with a sufficient first conductivity type concentration to create an impurity energy band and with a second conductivity type impurity concentration less than half the first, and a blocking layer between the first and second layers with a sufficiently low impurity concentration that substantially no charge transport can occur by an impurity conduction mechanism. First and second ohmic contacts are deposited on the first and second layers opposite the blocking layer. The same types of layers are used to construct transistors.

HETEROJUNCTION PHOTOTRANSISTOR CONSTRUCTED IN PLANAR TECHNOLOGY

SEMICONDUCTOR DEVICE HAVING A PASSIVATING LAYER

MULTI-SPECTRUM PHOTODIODE DEVICES

DUAL-BAND QUANTUM-WELL INFRARED SENSING ARRAY

An array of sensing pixels (100) detects infra-red radiation of two or more wavelengths. Each sensing pixel (100) includes at least two different quantumwell sensing stacks (110, 120) that are biased at a common voltage (Vbias).

Ultraviolet two-color detector with new structure based on gallium nitride material

The invention relates to an ultraviolet two-color detector with a new structure based on a gallium nitride material, which comprises a substrate, a N-type ohmic contact layer, an I-type active layer, a P-type active layer, two N-type ohmic electrodes and a Schottky electrode, wherein the N-type ohmic contact layer is manufactured on the substrate; the I-type active layer is manufactured in the middle of the upper surface of the N-type ohmic contact layer, and the area of the I-type active layer is less than the area of the N-type ohmic contact layer so that a table top is respectively arranged at the two sides of the N-type ohmic contact layer; the P-type active layer is manufactured on the I-type active layer; the two N-type ohmic electrodes are respectively manufactured on the table tops at the two sides of the upper surface of the N-type ohmic contact layer; and the Schottky electrode is manufactured on the P-type active layer.

Ga<2>O<3>/SiC heterojunction photoelectric PNP transistor and preparation method thereof

SEMICONDUCTOR DEVICES COMPRISING A PINNED PHOTODIODE STRUCTURE

Graphene - metal heterojunction photoelectric detector with concave array

A SiGe/Si heterojunction photosensitive transistor detector

Matrice d'elements photosensibles associant un phototransistor et une capacite de stockage

L'invention concerne les matrices photosensibles, pour la prise d'images. On propose ici une matrice dans laquelle chaque point photosensible comporte, en serie entre un conducteur de ligne 36 et un conducteur de colonne 32, une capacite en serie avec un phototransistor de type NIPIN ou PINIP. Ce phototransistor peut etre rendu conducteur, pour la lecture des charges stoc- kees dans la capacite, aussi facilement qu'une photodiode, meme dans l'obscurite. Le phototransistor est constitue de preference par un empilement de couches de silicium amorphe de type N 10, de type intrinseque 12, de type P 14, de type intrinseque 16, et de type N 18. Application notamment a la prise de vue radiologique avec une matrice de grandes dimensions.

PHOTODETECTOR HAS CARRYING MAJORITY

PHOTODIODE HAS THREE ZONES DOPEES, PHOTODETECTOR INCORPORATING a TELLEPHOTODIODE AND PROCESS OF ORDERING Of SUCH a PHOTODETECTOR

TRANSISTOR HAS HETEROJUNCTION

OPTO-ELECTRONIC CONTACTOR

A USE OF A SEMICONDUCTOR DEVICE, A METHOD FOR CONTROLLING THE STATE OF A SEMICONDUCTOR SWITCH AND AN ELECTRICAL ARRANGEMENT

Ce dispositif à semi-conducteur comprend deux bornes (1, 2) reliées entre elles par au moins une couche de matériau destinée à commuter le dispositif entre un état conducteur et un état bloquant le transport des porteuses de charge entre les bornes, lors de l'application d'une tension à travers ces bornes. Ce dispositif est utile en tant que commutateur dans des applications électriques dans lesquelles on utilise des tensions élevées, et il constitue un dispositif à semi-conducteur, activé de manière optique, changeant entre un état conducteur et un état non conducteur de façon sensiblement instantanée, par mise en éclairage ou arrêt d'éclairage d'une surface du dispositif, utilisé en tant que commutateur.

High temperature semiconductor devices having at least one gallium nitride layer

A device having high temperature operating characteristics is provided by depositing n-type cubic gallium nitride on n-type cubic silicon carbide to provide an ohmic contact or electrode. High temperature operating characteristics are also provided in a device having a pn heterojunction between a layer of cubic p-type silicon carbide or gallium arsenide and a first layer of cubic n-type gallium nitride. In a power transistor, a second layer of n-type gallium nitride is deposited on the other surface of the silicon carbide or gallium arsenide to form a pn heterojunction. The gallium nitride layer that is connected as an emitter is forward biased to cause electron injection into the silicon carbide or gallium arsenide layer. In a phototransistor device having high temperature operating characteristics, a transparent layer of cubic n-type gallium nitride is deposited on each side of either cubic p-type silicon carbide or gallium arsenide. Small electrodes are connected to the gallium nitride ...

Self-aligned in situ doped plug emitter

An emitter contact structure including a silicon substrate having a collector region, a base region within the collector region, and an emitter region within the base region. A base polysilicon layer positioned on the silicon substrate in contact with the base region and defining an aperture, with side walls, exposing the base and emitter regions of the silicon substrate. A spacer extending upwardly from the silicon substrate and formed to cover the side walls, the spacer covering the base region and partially covering the emitter region. An emitter polysilicon layer positioned entirely within the aperture in engagement with the emitter region, the spacer and the substrate without overlapping the base polysilicon layer.

Phototransistor of the type having an emitter-base heterojunction

A phototransistor comprising a substrate (9), a collector layer (2), a base layer (3), and an emitter layer (4) is disclosed. The base layer (3) is of a first composite III-V semiconductor material with a first type of doping and the emitter layer (4) is of a second composite III-V semiconductor material. A diffusion well (6), of the first type of doping extends on a main part of the emitter layer (4) down to the base layer. The remaining part of the emitter layer (4) is of a second type of doping. The main part of the emitter layer (4) has an area at least 100 times larger than the area of the remaining part. A contact layer with the second type of doping is deposited on the remaining part of the emitter layer (4) with an emitter contact on the contact layer, and a base contact on an extremity of the diffusion well (6). Such a phototransistor thus comprises a heterojunction transistor under the emitter contact and a homojunction photodiode under the diffusion well (6), and the diffusion ...

Phototransistor

A phototransistor is operated with a floating base but with the transistor operating point defined by prebiasing the base, typically by injecting the base current through a prebias emitter in the collector region outside of the depletion layer. The phototransistor has a signal to noise ratio comparable to those of optimized avalanche photodiodes but operates at a significantly lower voltage and without need for temperature compensation. The phototransistor is especially well-suited for optical communications at high data rates.

Photoelectric converter with phototransistor and refresh means

A photoelectric converter comprising a photosensor element, a typical example of the photosensor element comprising: a transistor including an n or n+ collector region an n- region disposed contiguous to the collector region, a p base region disposed contiguous to the n- region an n+ emitter region disposed contiguous to the base region, and a first electrode connected to the emitter region; and a storage capacitor constituted by the base region, an electrically insulating region disposed contiguous to the base region, and a second electrode connected to the electrically insulting region; whereby the base region is held in a floating state. A photogenerated charge is stored in the base region by controlling the potential of the base region and an electric signal corresponding to the charge stored in the base region is subsequently output from the first electrode.

Bipolar transistor

A bipolar transistor using a B-doped Si and Ge alloy for a base in which a Ge content in an emitter-base depletion region and in a base-collector depletion region is greater than a Ge content in a base layer. Diffusion of B from the base layer can be suppressed by making the Ge content in the emitter-base depletion region and in a base-collector depletion region on both sides of the base layer greater than the Ge content in the base layer since the diffusion coefficient of B in the SiGe layer is lowered as the Ge contents increases.

ACTIVE PHOTONIC DEVICE HAVING A DARLINGTON CONFIGURATION

An active photonic device having a Darlington configuration is disclosed. The active photonic device includes a substrate with a collector layer over the substrate. The collector layer includes an inner collector region and an outer collector region that substantially surrounds the inner collector region. A base layer resides over the collector layer. The base layer includes an inner base region and an outer base region that substantially surrounds and is spaced apart from the inner base region. An emitter layer resides over the base layer. The emitter layer includes an inner emitter region that is ring-shaped and resides over and extends substantially around an outer periphery of the inner base region. The emitter layer further includes an outer emitter region that is ring-shaped and resides over and extends substantially around the outer base region. A connector structure electrically couples the inner emitter region with the outer base region.

Photoelectric converter

A photoelectric converter comprising a photosensor element, a typical example of the photosensor element comprising: a transistor including an n or n+ collector region an n- region disposed contiguous to the collector region, a p base region disposed contiguous to the n- region, an n+ emitter region disposed contiguous to the base region, and a first electrode connected to the emitter region; and a storage capacitor constituted by the base region, an electrically insulating region disposed contiguous to the base region, and a second electroce connected to the electrically insulating region; whereby the base region is held in a floating state. A photogenerated charge is stored in the base region by controlling the potential of the base region and an electric signal corresponding to the charge stored in the base region is subsequently output from the first electrode.

Photoelectric converting device

A photoelectric converting device comprises a first semiconductor area of a first conductive type, a second semiconductor area of a second conductive type, and a third semiconductor area of the first conductive type. A charge is photoelectrically excited by light incident on second semiconductor area, and is derived from the first semiconductor area after amplification. A fourth semiconductor area of the first conductive type is formed in contact with the second semiconductor area and so positioned as to oppose to the third semiconductor area. During an operation of the device, a depletion layer extending from the interface between the second and fourth semiconductor areas reaches a depletion layer extending from the interface between the third and second semiconductor areas. ...

Radiation-sensitive semiconductor device and reading or writing unit comprising such a radiation-sensitive semiconductor device

SOLID STATE IMAGE PICKUP ELEMENT

PURPOSE: To increase the sensitivity of an image pickup element by sequentially disposing two p-n junctions to the incident lightin a photodetector and storing light production carrier only in the central region of the two p-n junctions. CONSTITUTION: An n type region 5 and a P type region 6 form together with a P type substrate 1 a photodetector, and the region 6 is further connected to a channel stopper 2, 7 while represents an n type region, which receives the carrier from the photodetector, and transmits charge to an output circuit by charge transfer means. The numeral 8 represents a transfer gate electrode, which feeds the carrier at the photodetector to the region 7. COPYRIGHT: (C)1983,JPO&Japio ...

INSULATED-GATE SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide an insulated-gate semiconductor device which can be controlled for gate capacitance and short-circuit current and can be suppressed in the variation in threshold voltages in the form of a CSTBT. SOLUTION: The CSTBT is formed between a p base region (104) and a semiconductor substrate (103), and contains a carrier accumulation layer (113) having a higher dopant concentration than the semiconductor substrate (103). In the CSTBT, the p base region (104) in the periphery of a gate electrode (110) works as a channel, and the carrier accumulation layer (113) satisfies a relationship of ND1 Подробнее

SEMICONDUCTOR DEVICE

PURPOSE: To reduce leakage current ICEO of a semiconductor device without causing the channel preventing effect by forming a photoreceiving element and electrode wirings formed along a base junction on an insulating film of the base junction of the element and connected to he emitter electrode of the element. CONSTITUTION: Electrode (aluminum) wirings 61 formed along a base junction on an insulating film 4 of the base junction of a photoreceiving element 11 and connected to the emitter electrode of the element 11 are formed. In this case, since the base junction is formed annularly as seen planely, the wirings 61 corresponding thereto are also annular. Since a bias voltage is always applied to the emitter via the bias between the collector and the emitter, the electrode 61 can constantly perform the channel preventing effect. As a negative bias voltage is applied to an emitter layer 3, a forward bias voltage is applied between the emitter and the base at this time so that the base layer ...

ДВУХПОЛЮСНЫЙ ПОЛУПРОВОДНИКОВЫЙ ПОЗИЦИОННО-ЧУВСТВИТЕЛЬНЫЙ ФОТОПРИЕМНИК С ОТРИЦАТЕЛЬНОЙ ДИФФЕРЕНЦИАЛЬНОЙ ПРОВОДИМОСТЬЮ

Изобретение может найти применение в различных узлах автоматики, устройствах управления и позиционирования. Фотоприемник, согласно изобретению, представляет собой комбинированный прибор, реализованный на основе полупроводникового прибора с отрицательной дифференциальной проводимостью и полупроводниковой структуры позиционно-чувствительного фотоприемника. Для увеличения протяженности области позиционной фоточувствительности дополнительно к полупроводниковому прибору с отрицательной дифференциальной проводимостью введена протяженная фоточувствительная полупроводниковая структура, имеющая верхнюю фоточувствительную область первого типа проводимости с первым и вторым контактами, расположенными по краям области, вторую, среднюю, область второго типа проводимости и третью, нижнюю, область первого типа проводимости с третьим контактом, соединенную таким образом, что первый контакт к фоточувствительной области протяженной фоточувствительной полупроводниковой структуры соединен с эмиттерным электродом ...

Semiconductor radiation detector, in particular for infrared radiation

Radiation detector comprising a three-layer semiconductor diode having temperature-dependent charge-carrier depletion in the central layer, the said diode being constructed as a bridge (Fig. 2) which is thermally insulated and exposed to the incident radiation (10). An array (Fig. 3) comprising a multiplicity of such radiation detectors (31), in particular with a drive circuit integrated in the substrate (Fig. 4), is also provided. ...

Opto-elektronischer Transistor

BILATERALER PHOTOTRANSISTOR

Infrarot-Detektor mit Homoübergangs-Struktur.

Silicon carbide transistor with UV Sensitivity

Single poly cmos imager

More complete charge transfer is achieved in a CMOS or CCD imager by reducing the spacing in the gaps between gates in each pixel cell, and/or by providing a lightly doped region between adjacent gates in each pixel cell, and particularly at least between the charge collecting gate and the gate downstream to the charge collecting gate. To reduce the gaps between gates, an insulator cap with spacers on its sidewalls is formed for each gate over a conductive layer. The gates are then etched from the conductive layer using the insulator caps and spacers as hard masks, enabling the gates to be formed significantly closer together than previously possible, which, in turn increases charge transfer efficiency. By providing a lightly doped region on between adjacent gates, a more complete charge transfer is effected from the charge collecting gate.

Solid imaging device

In a solid-state imaging device 1 , an overflow gate (OFG) 5 has a predetermined electric resistance value, while voltage application units 16 1 to 16 5 are electrically connected to the OFG 5 at connecting parts 17 1 to 17 5 . Therefore, when voltage values V 1 to V 5 applied to the connecting parts 17 1 to 17 5 by the voltage application units 16 1 to 16 5 are adjusted, the OFG 5 can yield higher and lower voltage values in its earlier and later stage parts, respectively. As a result, the barrier level (potential) becomes lower and higher in the earlier and later stage parts, so that all the electric charges generated in an earlier stage side region of photoelectric conversion units 2 can be caused to flow out to an overflow drain (OFD) 4 , whereby only the electric charges generated in a later stage side region of the photoelectric conversion units 2 can be TDI-transferred.

Visible sensing transistor, display panel and manufacturing method thereof

A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.

Solid-state imaging element and camera system

A solid-state imaging element includes a plurality of semiconductor layers stacked, a plurality of stack-connecting parts for electrically connecting the plurality of semiconductor layers, a pixel array part in which pixel cells that include a photoelectric conversion part and a signal output part are arrayed in a two-dimensional shape, and an output signal line through which signals from the signal output part of the pixel cells are propagated, in which the plurality of semiconductor layers includes at least a first semiconductor layer and a second semiconductor layer, and, in the first semiconductor layer, the plurality of pixel cells are arrayed in a two-dimensional shape, the signal output part of a pixel group formed with the plurality of pixel cells shares an output signal line wired from the stack-connecting parts, and the output signal line has a separation part which can separate each output signal line.

Infrared light detector

Provided is an infrared light detector 100 with a plurality of first electronic regions 10 which are electrically independent from each other and arranged in a specific direction, formed by dividing a single first electronic region. An outer electron system which is electrically connected to each of the plurality of first electronic regions 10 in a connected status is configured such that an electron energy level of excited sub-bands of each of the plurality of first electron regions 10 in a disconnected status is sufficiently higher than a Fermi level of each of second electronic regions 20 opposed to each of the first electronic regions 10 in a conduction channel 120.

Apparatus and method for detecting radiation

An apparatus and method for detecting radiation are provided. The apparatus includes an upper electrode layer transmitting radiation; a first insulating layer blocking charges from the upper electrode layer; a photoconductive layer becoming photoconductive upon exposure to the radiation; a second insulating layer protecting the photoconductive layer from a plasma discharge; a lower substrate facing the second insulating layer; a plurality of barrier ribs defining a cell structure between the second insulating layer and the lower substrate; a gas layer included in an inner chamber inside the cell structure and generating a plasma discharge; a bottom electrode formed on the lower substrate; a first radio frequency (RF) electrode formed over the bottom electrode and connected to a ground source; a second RF electrode to which RF power for generating plasma is applied; and a third insulating layer surrounding the first and second RF electrodes and thus insulating the first and second RF electrodes from the gas layer and the bottom electrode.

Electronic image detection device

The instant disclosure relates to an electronic image detection device comprising: a plurality of metal electrodes on a first face of an insulating layer; and amorphous silicon regions extending over the insulating layer between the metal electrodes.

Radiation detector manufacturing method, a radiation detector, and a radiographic apparatus

According to a radiation detector manufacturing method, a radiation detector and a radiographic apparatus of this invention, Cl-doped CdZnTe is employed for a conversion layer, with Cl concentration set to 1 ppm wt to 3 ppm wt inclusive, and Zn concentration set to 1 mol % to 5 mol % inclusive. This can form the conversion layer optimal for the radiation detector. Consequently, the radiation detector manufacturing method, the radiation detector and the radiographic apparatus can be provided which can protect the defect level of crystal grain boundaries by Cl doping in a proper concentration, and can further maintain integral sensitivity to radiation, while reducing leakage current, by Zn doping in a proper concentration.

Photodetector using a graphene thin film and nanoparticles, and method for producing the same

Provided are a photodetector (PD) using a graphene thin film and nanoparticles and a method of fabricating the same. The PD includes a graphene thin film having a sheet shape formed by means of a graphene deposition process using a vapor-phase carbon (C) source and a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film, the nanoparticle layer being formed of nanoparticles without a matrix material. The PD has a planar structure using the graphene thin film as a channel and an electrode and using nanoparticles as a photovoltaic material (capable of forming electron-hole pairs due to photoelectron-motive force caused by ultraviolet (UV) light). Since the PD has a very simple structure, the PD may be fabricated at low cost with high productivity. Also, the PD includes the graphene thin film to reduce power consumption.

Solid-state image pickup device

A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is configured to include an N-type semiconductor region, which is a first semiconductor region holding charges in a portion different from the photoelectric conversion portion. A P-type semiconductor region having a higher concentration than the P-type well is disposed under the N-type semiconductor region.

Radiation detector

A radiation detector of this invention has a barrier layer on the upper surface of a high resistance film along the outer edge of a common electrode, which enables prevention of a chemical reaction between an amorphous semiconductor layer and a curable synthetic resin. The barrier layer is adhesive to the curable synthetic resin film, and this can prevent strength being insufficient, such that temperature changes cause separation in interfaces between the barrier layer and curable synthetic resin film, thereby reducing the effect of inhibiting warpage and cracking. The material for the barrier layer is an insulating material not including a substance that would chemically react with the amorphous semiconductor layer. This can prevent components of the material for the barrier layer from chemically reacting with the semiconductor layer. Consequently, creeping discharge at the outer edge of the common electrode where electric fields concentrate can be prevented.

Semiconductor device

A semiconductor device having a solid-state image sensor which can prevent inter-pixel crosstalk more reliably. The device includes: a semiconductor substrate having a main surface; a first conductivity type impurity layer located over the main surface of the substrate; a photoelectric transducer including a first conductivity type impurity region and a second conductivity type impurity region which are joined to each other over the first conductivity type impurity layer; and transistors which configure a unit pixel including the photoelectric transducer and are electrically coupled to the photoelectric transducer. At least part of the area around the photoelectric transducer in a plan view contains an air gap and also has an isolation insulating layer for electrically insulating the photoelectric transducer and a photoelectric transducer adjacent to it from each other. The isolation insulating layer abuts on the top surface of the first conductivity type impurity layer.

Photodetector capable of detecting the visible light spectrum

Apparatuses capable of and techniques for detecting the visible light spectrum are provided.

Solid state imaging device

According to one embodiment, a solid state imaging device includes a photoelectric converting portion including a semiconductor region and a semiconductor film. The semiconductor region has a first region and a second region. The first region is of a second conductivity type. The first region is provided in a semiconductor substrate. The second region is of a first conductivity type. The first conductivity type is a different conductivity type from the second conductivity type. The second region is provided on the first region. The semiconductor film is of the second conductivity type. The semiconductor film is provided on the semiconductor region. An absorption coefficient of a material of the semiconductor film to a visible light is higher than an absorption coefficient of a material of the semiconductor substrate to the visible light. A thickness of the semiconductor film is smaller than a thickness of the semiconductor region.

Method, apparatus and system to provide conductivity for a substrate of an image sensing pixel

Techniques for promoting conductivity in a substrate for a pixel array. In an embodiment, an isolation region and a dopant well are disposed within an epitaxial layer adjoining the substrate, where a portion of the dopant well is between the substrate and a portion of the isolation well. In another embodiment, a contact is further disposed within the epitaxial layer, where a portion of the isolation region surrounds a portion of the contact.

Solid-state imaging device

To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area.

Methods for light coupling into power semiconductors

Disclosed is a method of coupling light into a power semiconductor device having a semiconductor structure with two or more layers. The power semiconductor device has multiple cells of functionally identical units linked by multiple interconnects. In each device unit, a patterned electrode layer is disposed on the surface of the semiconductor structure. The method includes illuminating the power semiconductor device by directing a light from a light source through the patterned electrode layer to form an enhanced light coupling with the semiconductor structure. The patterned electrode layer is configured to have a micron scaled grid pattern having multiple metal grids and aperture openings that is based on a distributed resistance model having two characteristic current decay lengths.

Low-flux and low-noise detection circuit

The detection circuit of the Source Follower per Detector type comprises a photodiode connected to an integration node. A biasing circuit makes it possible to bias the photodiode between a first reverse-bias state and a second floating state. A readout circuit is connected to the integration node for generating a signal representative of the scene observed by the photodiode. A metal shielding is arranged around the integration node. The metal shielding is connected to an output of the readout circuit configured to have a potential varying in the same direction as the potential at the integration node.

Semiconductor mos entrance window for radiation detectors

A semiconductor detector device, such as a PIN diode or silicon drift detector, including a substrate with an entrance window. The entrance window comprises a conductive layer, and an insulating layer disposed between the conductive layer and the substrate. The insulating layer and conductive layer cover a center portion of the surface of the substrate.

Solid-state imaging device

The present invention provides a solid-state imaging device in which high S/N is achieved. A solid-state imaging device includes a photodiode, a transfer transistor, a floating diffusion, a floating diffusion wiring, an amplifying transistor, a power line, and first output signal lines, in which the first output signal lines are formed one on each side of the floating diffusion wiring in a layer having the floating diffusion wiring formed on a semiconductor substrate, and the power line is formed above the floating diffusion wiring.

Providing Variable Cell Density and Sizes in a Radiation Detector

An apparatus and method to decrease light saturation in a photosensor array and increase detection efficiency uses a light distribution profile from a scintillator-photodetector geometry to configure the photosensor array to have a non-uniform sensor cell pattern, with varying cell density and/or varying cell size and shape. A solid-state photosensor such as a SiPM sensor having such a non-uniform cell structure realizes improved energy resolution, higher efficiency and increased signal linearity. In addition the non-uniform sensor cell array can have improved timing resolution due to improvements in statistical fluctuations. A particular embodiment for such photosensors is in PET medical imaging.

Active pixel sensor with a diagonal active area

An imaging device formed as a CMOS semiconductor integrated circuit having two adjacent pixels in a row connected to a common column line and a processor based system with such an imaging device. By having adjacent pixels of a row share column lines, the CMOS imager circuit eliminates half the column lines of a traditional imager allowing the fabrication of a smaller imager. The imaging device also may be fabricated to have a diagonal active area to facilitate contact of two adjacent pixels with the single column line and allow linear row select lines, reset lines and column lines.

Color imaging using time-multiplexed light sources and monochrome image sensors with multi-storage-node pixels

Electronic devices may include monochrome image sensors having multi-storage-node image sensor pixels. A multi-storage-node image pixel may be synchronized with artificial light sources of different colors and may include a floating diffusion region and multiple storage regions. The image pixels may be sequentially exposed to each light color and may store charge associated with each color in each of the different storage regions. After exposure, the stored charge may be transferred to the floating diffusion region and subsequently read out using readout circuitry. The image pixel may have one set of storage gates that can perform both storage and transfer functions. Alternatively, the image pixel may have a first set of transfer gates for transferring charge to the storage regions and a second set of transfer gates for transferring charge from the storage regions to the floating diffusion region.

Solid-state imaging device and electronic apparatus

A solid-state imaging device includes a plurality of photoelectric conversion units, a floating diffusion unit that is shared by the plurality of photoelectric conversion units and converts electric charge generated in each of the plurality of photoelectric conversion units into a voltage signal, a plurality of transfer units that are respectively provided in the plurality of photoelectric conversion units and transfer the electric charge generated in the plurality of photoelectric conversion units to the floating diffusion unit, a first transistor group that is electrically connected to the floating diffusion unit and includes a gate and source/drain which are arranged with a first layout configuration, and a second transistor group that is electrically connected to the floating diffusion unit, includes a gate and source/drain arranged with a second layout configuration symmetrical to the first layout configuration, and is provided in a separate area from the first transistor group.

Solid-state image pickup apparatus and drive method therefor

A solid-state image pickup apparatus of the present invention includes a plurality of pixels arranged in a matrix. For the convenience sake, among the plurality of pixels, two pixels from which signals are not read in parallel are set to be a first pixel and a second pixel. A first reset transistor is disposed in an electrical path between a first reset power supply line and the control electrode of an amplifying transistor contained in the first pixel. A second reset transistor is disposed in an electrical path between the control electrode of the amplifying transistor contained in the first pixel and the control electrode of an amplifying transistor contained in the second pixel. A third reset transistor is disposed in an electrical path between the control electrode of the amplifying transistor contained in the second pixel and a second reset power supply line.

Image capturing apparatus and defective pixel detection method

An image capturing apparatus comprises: an image sensor including a plurality of pixels each having a microlens and a plurality of photoelectric conversion means, and defective pixel detection means for detecting defective photoelectric conversion means from among the plurality of photoelectric conversion means, wherein the defective pixel detection means determines defective photoelectric conversion means by comparing an output signal output from photoelectric conversion means of a subject, sequentially taken from the plurality of photoelectric conversion means, for detection with first signals from photoelectric conversion means included in pixels neighboring the pixel including the photoelectric conversion means of the subject for detection, each position of the photoelectric conversion means included in the neighboring pixels corresponding to a position of the photoelectric conversion means of the subject for detection with respect to the microlens.

RADIOGRAPHIC IMAGING DEVICE

The present invention provides a radiographic imaging device that may image radiographic images with high sharpness while suppressing a drop in sensitivity. Namely, a radiation detector, in which a scintillator that generates light due to irradiation of radiation and a TFT substrate on which plural sensor portions configured including an organic photoelectric conversion material that generates electric charges by receiving light are disposed are sequentially layered, is positioned in such a way that radiation that has passed through a subject is made incident from the TFT substrate side. 1. A radiographic imaging device comprising: a radiation detector , in which a light-emitting layer that generates light due to irradiation of radiation and a substrate on which plural sensor portions configured including an organic photoelectric conversion material that generates electric charges by receiving light are disposed and are sequentially layered , with the radiation detector being positioned so that radiation that has passed through a subject is made incident from the substrate side.2. The radiographic imaging device according to claim 1 , wherein the substrate is configured by any of plastic resin claim 1 , an aramid claim 1 , bio-nanofibers claim 1 , or a flexible glass substrate.3. The radiographic imaging device according to claim 1 , wherein thin-film transistors claim 1 , that are configured including an amorphous oxide in their active layers and that read out the electric charges generated in the sensor portions claim 1 , are formed on the substrate in correspondence to the sensor portions.4. The radiographic imaging device according to claim 1 , wherein the substrate is adhered to an imaging region within a casing claim 1 , to which the radiation that has passed through the subject is irradiated.5. The radiographic imaging device according to claim 1 , whereinthe light-emitting layer is configured including CsI columnar crystals, andthe organic photoelectric ...

LASER DAYLIGHT DESIGNATION AND POINTING

A laser designator system using modulated CW laser diodes and a conventional high pixel count image sensor array, such as CCD or CMOS array. These two technologies, diode lasers and imaging sensor arrays are reliable, widely used and inexpensive technologies, as compared with prior art pulsed laser systems. These systems are distinguished from the prior art systems in that they filter the laser signal spatially, by collecting light over a comparatively long period of time from a very few pixels out of the entire field of view of the image sensor array. This is in contrast to the prior art systems where the laser signal is filtered temporarily, over a very short time span, but over a large fraction of the field of view. By spatially filtering the signal outputs of the individual pixels, it becomes possible to subtract the background illumination from the illuminated laser spot. 120-. (canceled)21. A method of imaging a field of view , the method comprising:illuminating the field of view by means of a CW laser beam modulated at a first rate to provide a stream of laser pulses;imaging the field of view using a multi-pixel sensor array;accumulating signals obtained from said pixels during the detection of laser pulses reflected from said field of view in a first set of pixel signal accumulators, for the duration of a predetermined plurality of pulses, to obtain from those pixels a first set of accumulated pixel signals arising from said reflected laser pulses; andreading out said first set of accumulated pixel signals to image said field of view, after completion of said predetermined plurality of pulses.22. The method of claim 21 , further providing the step of repeating the accumulating of signals obtained from said pixels for further durations of said predetermined plurality of pulses claim 21 , to obtain further sets of accumulated pixel signals claim 21 , and reading out said further sets of accumulated pixel signals at a second rate substantially lower than said ...

METHOD OF CONTROLLING A SYSTEM INCLUDING AN IMAGE SENSOR AND A LIGHT SOURCE

A method for driving a sensor comprises, during a first time interval, generating a first type sensor value by repeatedly generating alternating periods of sensitivity and insensitivity of at least one pixel of the sensor, and reading out the sensor, and during a second time interval, generating a second type sensor value by irradiating the scene facing the sensor with pulses of electromagnetic energy having a wavelength detectable by the sensor and having predefined start times and durations, and repeatedly generating alternating periods of sensitivity and insensitivity of the at least one pixel, and reading out the pixel once again. Generating alternating periods of sensitivity and insensitivity includes repeatedly controlling transfer means and reset means of the at least one pixel to alternately enable charge transfer while removing reset from the detector element and to disable charge transfer while resetting the detector element, respectively. 1. A method of operating a system including a controllable light source and a sensor having at least two pixels , each pixel having a detector element that is adapted to detect electromagnetic energy , a storage node , first and second reset means adapted to selectively reset or remove the reset from the detector element and the storage node , respectively , transfer means adapted to selectively enable or disable charge transfer from the detector element to the storage node , readout means adapted to selectively read out the storage node , wherein the sensor is adapted to sample a scene facing the sensor during a predetermined first time interval , the method comprising , for each one of the at least two pixels:during a second time interval, generating a first type sensor value by repeatedly generating alternating periods of sensitivity and insensitivity of the at least two pixels, followed by reading out the pixels after the end of the second time period, while the controllable light source is disabled; andduring a ...

Method of manufacturing solid-state image sensor

A method of manufacturing a solid-state image sensor having photoelectric conversion elements and one or more MOS transistors are formed on a semiconductor substrate is provided. The method includes forming a resist pattern having an opening and a shielding portion over the substrate; and implanting ions in the substrate through the opening. When the substrate is viewed from a direction, an isolation region that is positioned between accumulation regions adjacent to one another is exposed in the opening, and when viewed from a different direction, a channel region of the MOS transistors is exposed in the opening, and the isolation region is shielded by the shielding portion. Ions irradiated in the direction are implanted in the isolation region, and ions irradiated in the different direction are implanted in the channel region.

SOLID-STATE IMAGING DEVICE, ELECTRONIC EQUIPMENT AND MANUFACTURING METHOD OF THE SOLID-STATE IMAGING DEVICE

A solid-state imaging device including, active elements configured to handle the charge captured in a photoreceiving region, an element isolation region configured to isolate regions of the active element, a first impurity region configured to surround the element isolation region, and a second impurity region including an impurity region lower in impurity concentration than the first impurity region, the second impurity region being provided between the first impurity region and active elements. 1. A solid-state imaging device comprising:active elements configured to handle charges captured in a photoreceiving region, wherein at least one of the active elements is a transistor;an element isolation region configured to isolate the active elements;a first impurity region surrounding the element isolation region;a second impurity region between the first impurity region and the active elements and having an impurity concentration lower than that of the first impurity region; anda third impurity region surrounding at least one of a source and a drain of the transistor.2. The solid-state imaging device of claim 1 , whereinone of the active elements is a transistor adjacent to a doped section configured to convert the charge captured in the photoreceiving region to a voltage.3. The solid-state imaging device of claim 1 , whereinthe active elements are transistors adjacent to the photoreceiving region.4. Electronic equipment comprising:a solid-state imaging device configured to output an electric signal according to the amount of light received; and active elements configured to handle charges captured in a photoreceiving region, wherein at least one of the active elements is a transistor,', 'an element isolation region configured to isolate the active elements,', 'a first impurity region surrounding the element isolation region,', 'a second impurity region between the first impurity region and the active elements and having an impurity concentration lower than that of ...

RADIATION DETECTOR AND METHOD

Embodiments of the invention provide a radiation detector comprising a pixel, the pixel having a first diode arranged to collect radiation-generated carriers; a second diode arranged to collect radiation-generated carriers; switching components operable to permit independent readout of the first diode and the second diode, wherein the first diode has a higher node capacitance than the second diode. 1. A radiation detector comprising a pixel , the pixel having:a first diode arranged to collect radiation-generated carriers;a second diode arranged to collect radiation-generated carriers;switching components operable to permit independent readout of the first diode and the second diode, whereinthe first diode has a higher node capacitance than the second diode.2. The radiation detector according to claim 1 , wherein the first diode and the second diode are arranged such that the first diode collects radiation-generated carriers substantially only after eitherthe carriers collected by the second diode exceed the noise floor of the second diode, orthe carriers collected by the second diode exceed the noise floor of the first diode.3. The radiation detector according to claim 1 , further comprising:first bias wiring for applying a first bias voltage to the first diode; second bias wiring for applying a second bias voltage to the second diode, whereinthe first and second bias wiring are arranged such that the first and second bias voltages may be different.4. The radiation detector according to claim 3 , wherein the first and second bias wiring are arranged to apply the first and second bias voltages such that the second bias voltage is greater than the first bias voltage.5. The radiation detector according to claim 3 , wherein the second bias wiring is arranged to apply the second bias voltages such that the second diode is prevented from collecting carriers.6. The radiation detector according to claim 1 , wherein the first diode is positioned in a shadow claim 1 , so as ...

DETECTOR FOR USE IN A CHARGED PARTICLE APPARATUS

A detector with a Silicon Diode and an amplifier, and a feedback element in the form of, for example, a resistor or a diode, switchably connected to the output of the amplifier. When the feedback element is selected via a switch, the detector operates in a Current Measurement Mode for determining electron current, and when the element is not selected the detector operates in its well-known Pulse Height Measurement Mode for determining the energy of X-ray quanta. 1. A Radiation detector for detecting X-rays , the detector comprising a Silicon Drift Diode , the Silicon Drift Diode showing an anode and an output , the Silicon Drift Diode in working producing a pulse on the output in response to a single detected photon , the output connected to electronic circuitry for measuring the output signal ,characterized in thatthe Silicon Drift Diode comprises a voltage/current converter between an I/O port and the anode, the detector equipped to selectively connect the voltage/current convertor in an analog feed-back loop via a switch, as a result of which the Silicon Drift Diode is equipped to switchably operate in a pulse height measurement mode or a current measurement mode.2. The radiation detector of in which the voltage/current convertor is a resistor claim 1 , as a result of which the current measurement mode is a linear current measurement mode.3. The radiation detector of in which the voltage/current detector is a diode claim 1 , as a result of which the current measurement mode is a logarithmic current measurement mode.4. The radiation detector of claim 1 , the Silicon Drift Diode showing a surface sensitive to radiation claim 1 , the sensitive surface opposite to the surface on which the anode is formed claim 1 , and the SDD shows an active volume close to the sensitive surface claim 1 , the distance of the active volume to the sensitive surface sufficiently small for electrons with an energy of 20 keV claim 1 , more specifically 2 keV claim 1 , most specifically ...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Disclosed is a method for manufacturing a semiconductor device that can improve the performance of a photodiode that is formed on a same substrate as a thin film transistor without greatly deteriorating the productivity of the semiconductor device. On a glass substrate a base layer having a recess on the surface is formed, and on the base layer an amorphous silicon thin film is formed. The amorphous silicon thin film is melted to form a crystalline silicon thin film while moving the molten silicon into the recess Of the silicon thin film a silicon film that constitutes a portion of a thin film transistor is formed of the silicon thin film in a part other than the recess while a silicon film that constitutes a portion of a photodiode is formed of the silicon thin film in the recess 1. A method for manufacturing a semiconductor device , comprising:a base layer forming step of forming a base layer on a substrate, the base layer having a recess on a surface thereof;a silicon layer forming step of forming an amorphous silicon layer on the base layer;a melting step of melting the amorphous silicon layer to form a crystalline silicon layer while moving molten silicon into the recess; anda semiconductor layer forming step of forming, of the crystalline silicon layer, a first semiconductor layer that constitutes a portion of a thin film transistor and a second semiconductor layer that constitutes a portion of a photodiode, the first semiconductor layer being formed of the silicon layer located in a part other than the recess, the second semiconductor layer being formed of the silicon layer located in the recess.2. The method for manufacturing a semiconductor device according to claim 1 , further comprising a step of forming an island shaped light-shielding layer on the substrate claim 1 , wherein claim 1 , in the base layer forming step claim 1 , the base layer is formed on the substrate and the light-shielding layer such that the recess is located above the light-shielding ...

Solid-state imaging device

A purpose of the present invention is to provide a preferable separation structure of wells when a photoelectric conversion unit and a part of a peripheral circuit unit or a pixel circuit are separately formed on separate substrates and electrically connected to each other. To this end, a solid-state imaging device includes a plurality of pixels including a photoelectric conversion unit and a amplification transistor configured to amplify a signal generated by the photoelectric conversion unit; a first substrate on which a plurality of the photoelectric conversion units are disposed; and a second substrate on which a plurality of the amplification transistors are disposed. A well of a first conductivity type provided with a source region and a drain region of the amplification transistor is separated from a well, which is disposed adjacent to the well in at least one direction, of the first conductivity type provided with the source region and the drain region of the amplification transistor.

RESONANCE ENHANCED ABSORPTIVE COLOR FILTERS

Resonance enhanced color filter arrays are provided for image sensors. Resonance cavities formed with color filter materials that enhance the color filtering capabilities of the color filter materials. Resonance enhanced color filter arrays may be provided for back side illumination image sensors and front side illumination image sensors. A layer of high refractive index material or metamaterial may be provided between a microlens and a color filter material to serve as a first, partially reflecting interface for the resonance cavity. An optional layer of high refractive index material or metamaterial may be provided between color filter material and a substrate. In front side illumination image sensors, color filter material may be provided in a light guide structure that extends through interlayer dielectric. The color filter material in the light guide structure may form at least part of a resonance cavity tor a resonance enhanced color filter array. 1. An image sensor , comprising:an array of photodiodes in a substrate;color filter material in a color filter array; andfirst and second interfaces that form a resonance cavity with the color filter material, wherein the resonance cavity enhances a color filtering capability of the color filter material.2. The image sensor defined in claim 1 , further comprising:a micro lens array; anda layer of material between the microlens array and the color filter material, wherein the first interface comprises a partially-reflecting interface between the layer of material and the color filter material.3. The image sensor defined in claim 2 , wherein the color filter material has an associated refractive index and wherein the layer of material has an associated refractive index higher than the associated refractive index of the color filter material.4. The image sensor defined in claim 2 , wherein the layer of material comprises metamaterial.5. The image sensor defined in claim 2 , wherein the image sensor comprises a back side ...

DETECTION DEVICE FOR TWO DIFFERENT COLOURS WITH IMPROVED OPERATING CONDITIONS

The substrate includes successively a first semiconductor layer having a first bandgap energy, a semiconductor buffer layer, a second semiconductor layer having a first bandgap energy different from the first bandgap energy. Two photodetectors sensitive to two different colors are formed respectively on the first and second semiconductor layers. A first biasing pad electrically connects the first semiconductor layer to a first biasing circuit. A second biasing pad electrically connects the second semiconductor layer to a second biasing circuit. The first biasing pad is devoid of electrical contact with the second semiconductor layer. 1. Detection circuit comprising: a first semiconductor layer having a first bandgap energy,', 'a semiconductor buffer layer configured so as to block a charge carrier current between the first semiconductor layer and a second semiconductor layer,', 'the second semiconductor layer having a second bandgap energy different from the first bandgap energy,, 'A substrate successively comprisinga first photodiode sensitive to a first colour and having a first electrode formed by means of the first semiconductor layer,a second photodiode sensitive to a second colour and having a first electrode formed by means of the second semiconductor layer and separated from the first photodiode by the buffer layer,a readout circuit electrically coupled to the first and second photodiode,a first biasing pad electrically connected to the first semiconductor layer and devoid of electrical connexion with the second semiconductor layer,a first contact connected to a second electrode of the first photodiode,a second biasing pad electrically connected to the second semiconductor layer and devoid of electrical connexion with the first semiconductor layer,a second contact connected to a second electrode of the second photodiode,a first biasing circuit configured to apply a first potential difference between the first biasing pad and the first contact,a second ...

SEAL RING SUPPORT FOR BACKSIDE ILLUMINATED IMAGE SENSOR

A backside illuminated imaging sensor with a seal ring support includes an epitaxial layer having an imaging array formed in a front side of the epitaxial layer. A metal stack is coupled to the front side of the epitaxial layer, wherein the metal stack includes a seal ring formed in an edge region of the imaging sensor. An opening is included that extends from the back side of the epitaxial layer to a metal pad of the seal ring to expose the metal pad. The seal ring support is disposed on the metal pad and within the opening to structurally support the seal ring. 114.-. (canceled)15. A method of fabricating a backside illuminated imaging sensor , the method comprising: an epitaxial layer having an imaging array formed in a front side of the epitaxial layer, wherein the imaging array is adapted to receive light from a back side of the epitaxial layer;', 'a metal stack coupled to the front side of the epitaxial layer, wherein the metal stack includes a seal ring formed in an edge region of the imaging sensor;, 'providing a backside illuminated imaging sensor, the imaging sensor includingetching an opening extending from the back side of the epitaxial layer to a metal pad of the seal ring to expose the metal pad;depositing material on the back side of the epitaxial layer and within the opening; andetching the material to form a seal ring support on the metal pad and within the opening to structurally support the seal ring, wherein the seal ring support has a first width in a corner region of the backside illuminated imaging sensor and a second width different from the first width in a side region of the backside illuminated imaging sensor.16. The method of claim 15 , wherein etching the material to form the seal ring support includes removing the material from a region of the back side of the epitaxial layer directly above the imaging array.17. The method of claim 15 , further comprising masking the material before etching the material.18. The method of claim 15 , ...

SEMICONDUCTOR X-RAY DETECTOR

A semiconductor X-ray detector comprises: a semiconductor X-ray sensor portion , which has a plate-like outer shape including an opening portion near to a central portion thereof, and is formed with plural numbers of pixel-like X-ray sensors between a surface and a reverse surface thereof; and a read-out portion , which is disposed on the reverse surface of the semiconductor X-ray sensor portion, and executes a predetermined process on each of signals outputted from the plural numbers of the X-ray sensors building up the semiconductor X-ray sensor portion, thereby outputting detected signals therefrom. The read-out portion is built up by assembling read-out units in plural numbers thereof, flatly in one body, each being formed into a rectangular shape, respectively, and forming plural numbers of pads on a surface thereof, as well as, having plural numbers of processing circuit portions and plural numbers of through hole vias in an inside thereof, and further having plural numbers of pads on a reverse surface thereof. The semiconductor X-ray sensor portion and the read-out portion are laminated to form into one body. 1. A semiconductor X-ray detector , comprising:a semiconductor X-ray sensor portion, which has a plate-like outer shape including at least an opening portion near to a central portion thereof, and is formed with plural numbers of pixel-like X-ray sensors between a surface and a reverse surface thereof; anda read-out portion, which is disposed on the reverse surface of said semiconductor X-ray sensor portion, and executes a predetermined process on each of signals outputted from the plural numbers of said X-ray sensors building up said semiconductor X-ray sensor portion, thereby outputting detected signals therefrom, whereinsaid read-out portion is built up by assembling read-out units in plural numbers thereof, flatly in one body, each being formed into a plate-like rectangular shape, with forming plural numbers of input portions on a surface thereof, as ...

SOLID-STATE IMAGING DEVICE AND CAMERA

A solid-state imaging device which includes a plurality of pixels in an arrangement, each of the pixels including a photoelectric conversion element, pixel transistors including a transfer transistor, and a floating diffusion region, in which the channel width of transfer gate of the transfer transistor is formed to be larger on a side of the floating diffusion region than on a side of the photoelectric conversion element. 1 'a channel width of a transfer gate of the transfer transistor is larger along a side facing the floating diffusion region than a width of the transfer gate along a side facing the photoelectric conversion element.', 'wherein,'}. A solid-state imaging device, comprising a plurality of pixels, each of the pixels including (a) a photoelectric conversion element, (b) pixel transistors including a transfer transistor, and (c) a floating diffusion region, The application is a continuation of co-pending U.S. application Ser. No. 12/275,489, filed on Nov. 21, 2008, which is incorporated herein by reference to the extent permitted by law. The present invention claims priority to Japanese Patent Application No. JP 2007-311183 filed in the Japanese Patent Office on Nov. 30, 2007, the entire contents of which being incorporated herein by reference.1. Field of the InventionThe invention generally relates to solid-state imaging devices and cameras. More particularly, the invention relates to a solid-state imaging device and a camera provided with the solid-state imaging device.2. Description of the Related ArtSolid-state imaging devices are classified broadly into amplification type solid-state imaging devices, which are typically exemplified by CMOS (complementary metal-oxide semiconductor) image sensors, and charge transfer type imaging devices, which are typified by CCD (charge-coupled device) image sensors.CMOS image sensors have replaced CCD sensors at rapid speed particularly in the area of portable device-oriented image sensors owning to high ...

SOI-BASED CMOS IMAGERS EMPLOYING FLASH GATE/CHEMISORPTION PROCESSING

A method of manufacturing a CMOS image sensor is disclosed. A silicon-on-insulator substrate is provided, which includes providing a silicon-on-insulator substrate including a mechanical substrate, an insulator layer substantially overlying the mechanical substrate, and a seed layer substantially overlying the insulator layer. A semiconductor substrate is epitaxially grown substantially overlying the seed layer. The mechanical substrate and at least a portion of the insulator layer are removed. An ultrathin oxide later is formed substantially underlying the semiconductor substrate. A mono layer of metal is formed substantially underlying the ultrathin oxide layer. 1. A semiconductor device , comprising:a silicon-on-insulator substrate including an insulator layer and a seed layer substantially overlying the insulator layer;a semiconductor substrate grown substantially overlying the seed layer;an ultrathin oxide layer substantially underlying the semiconductor substrate;and a mono layer of metal substantially underlying the ultrathin oxide layer.2. The semiconductor device of claim 1 , wherein at least one dopant diffuses into the semiconductor substrate such that claim 1 , at completion of the growing of the semiconductor substrate claim 1 , there exists a net dopant concentration profile in the seed layer and the semiconductor substrate which has a minimum value at an interface of the insulating layer and the seed layer and which increases monotonically from the minimum value a predetermined distance within the seed layer and the semiconductor substrate.3. The semiconductor device of claim 1 , further comprising an anti-reflective coating deposited substantially underlying the ultrathin oxide layer.4. The semiconductor device of claim 1 , further comprising at least one CMOS pixel formed in the semiconductor substrate distal to the insulator layer.5. The semiconductor device of claim 4 , wherein the semiconductor substrate is of a first conductivity type and ...

SOLID-STATE IMAGING DEVICE AND ENDOSCOPE DEVICE

A solid-state imaging device and an endoscope device can correct characteristics of a digital signal output from an AD conversion unit with respect to a pixel signal input to an AD conversion unit with higher precision even when a dynamic range of a pixel signal is changed. A correction unit corrects the digital signal output from the AD conversion unit based on a correction function using the digital signal output from the AD conversion as a variable so as to correct the characteristics of the digital signal output from the AD conversion unit with respect to the pixel signal input to the AD conversion unit. A correction method changing unit changes an order of a variable between first and other orders in the correction function according to a change in a dynamic range of the pixel signal. 1. A solid-state imaging device , comprising:a pixel unit that has a plurality of pixels arranged in a matrix form, each of the plurality of pixels generating pixel signals, and outputs the pixel signals to a plurality of pixel signal output lines arranged to correspond to columns of the plurality of pixels;an AD conversion unit that is connected to one of the plurality of pixel signal output lines and converts the pixel signals output to the pixel signal output lines into digital signals to output the digital signals;a correction unit that corrects the digital signals output from the AD conversion unit based on a correction function using the digital signals output from the AD conversion unit as a variable so as to correct characteristics of the digital signals output from the AD conversion unit with respect to the pixel signals input to the AD conversion unit; anda correction method changing unit that changes an order of the variable between first and other orders in the correction function according to a change in a dynamic range of the pixel signals.2. The solid-state imaging device according to claim 1 , wherein the correction method changing unit changes the order of the ...

Image sensors with vertical junction gate source follower pixels

An image sensor pixel suitable for use in a back-side-illuminated or a front-side-illuminated sensor arrangement is provided. The image sensor pixel may be a small size pixel that includes a source follower implemented using a vertical junction field effect (JFET) transistor. The vertical JFET source follower may be integrated directly into the floating diffusion node, thereby eliminating excess metal routing and pixel area typically allocated for the source follower in conventional pixel configurations. Pixel area may instead be allocated for increasing the charge storage capacity of the photodiode or can be used to reduce pixel size while maintaining pixel performance. Using a vertical junction field effect transistor in this way simplifies pixel addressing operations and minimizes random telegraph signal (RTS) noise associated with small size metal-oxide-semiconductor (MOS) transistors.

IMAGING DEVICE

An imaging device includes: a plurality of first pixels, each including a photodiode and in-pixel transistors and having a light-blocking metal film blocking part of light entering the respective first pixels; and a plurality of second pixels, each including a photodiode and in-pixel transistors and having no light-blocking metal film; and each of the photodiodes included in the first pixels or the second pixels is surrounded with a metal frame. 1. An imaging device comprising:a plurality of first pixels, each including a photodiode and in-pixel transistors and having a light-blocking metal film blocking part of light entering the respective first pixels; anda plurality of second pixels, each including a photodiode and in-pixel transistors and having no light-blocking metal film; whereineach of the photodiodes included in the first pixels or the second pixels is surrounded with a metal frame.2. The imaging device according to claim 1 , whereinthe plurality of first pixels and the plurality of second pixels are disposed in such a way that, in each of the plurality of first pixels and the plurality of second pixels, a distance between part of a wiring line connected to a terminal of one of the in-pixel transistors and a metal frame of an adjacent pixel becomes constant.3. The imaging device according to claim 1 , whereinthe plurality of first pixels and the plurality of second pixels are disposed in such a way that, in each of the plurality of first pixels and the plurality of second pixels, a distance between a wiring line connecting a gate terminal of one of the in-pixel transistors, which converts electric charges into a voltage signal, and a floating diffusion terminal in a circuit and a metal frame in an adjacent pixel becomes constant.4. The imaging device according to claim 1 , whereinthe light-blocking metal film and the metal frame are made of a same metal film forming a wiring line connecting predetermined terminals of the in-pixel transistors.5. The imaging ...

IMAGING APPARATUS, RADIATION IMAGING SYSTEM, AND METHOD FOR MANUFACTURING IMAGING APPARATUS

An imaging apparatus includes: a plurality of pixels each of which includes a conversion element and a first transistor of which one of a source and a drain is connected to the conversion element; and a second transistor which is shared by the plurality of pixels and has a gate connected respectively to the other of the source and the drain of the first transistor of each of the plurality of pixels. At least one among the gate, a source, a drain and a channel portion of the second transistor is formed to be extended over the plurality of pixels, and the conversion element is arranged over the first and second transistors. 1. An imaging apparatus comprising:a plurality of pixels, each including a conversion element and a first transistor, wherein one of a source and a drain of the first transistor is connected to the conversion element; anda second transistor being shared by the plurality of pixels and having a gate connected respectively to the other of the source and the drain of the first transistor of each of the plurality of pixels, whereinat least one among the gate, a source, a drain and a channel portion of the second transistor is formed to be extended over the plurality of pixels, and the conversion element is arranged over the first and second transistors.2. The imaging apparatus according to claim 1 , whereinthe second transistor is partially removed at a part of the channel portion over which the conversion element is not arranged.3. The imaging apparatus according to claim 1 , whereinthe second transistor is partially removed at a part of the source and/or the drain over which the conversion element is not arranged.4. The imaging apparatus according to claim 2 , whereinthe part removed is positioned at an intersection between a driving line of the first transistor and the second transistor.5. The imaging apparatus according to claim 3 , whereinthe part removed is positioned at an intersection between a driving line of the first transistor and the second ...

RADIATION DETECTOR WITH STEERING ELECTRODES

The invention relates to a radiation detector () and an associated method for the detection of (e.g. X or γ-) radiation. The detector () comprises a converter element () in which incident photons (X) are converted into electrical signals, and an array of anodes () for generating an electrical field (E) in the converter element (). At least two anodes are associated with two steering electrodes () to which different potentials can be applied by a control unit (). Preferably, each single anode or small group of anodes is surrounded by one steering electrode. The potentials of the steering electrodes () may be set as a function of the potentials that are induced in these electrodes when an operating voltage is applied between the anodes and a cathode (). Moreover, a grid electrode () may be provided that at least partially encircles anodes () and their steering electrodes (). 1. A radiation detector , comprising:a) a converter element for converting incident radiation into electrical signals;b) a periodic or quasi-periodic array of anodes disposed on a first side of the converter element;c) at least two steeling electrodes that are disposed adjacent to two different anodes;d) a control unit that is connected to the at least two steering electrodes and adapted to apply different electrical potentials to the at least two steering electrodes wherein said potentials are a function of the open-circuit voltages that result between a steering electrode and the associated anode, when a voltage is applied between the associated anodes and a cathode.2. The radiation detector according to claim 1 ,wherein at least one of the steering electrodes surrounds the adjacent anode.3. The radiation detector according to claim 1 ,wherein the anode is disposed off-centre with respect to the steering electrode.4. The radiation detector according to claim 1 ,wherein at least one steering electrode is disposed adjacent to two or more anodes.5. The radiation detector according to claim 1 , ...

IONIZING RADIATION DETECTION DEVICE WITH A SEMI-CONDUCTOR DETECTOR HAVING AND IMPROVED SPECTROMETRIC RESPONSE

This invention relates to an ionizing radiation detection device including a detector () of semi-conductor material intended to be biased thanks to electrodes (), among which reading electrodes () connected to a reading circuit () process signals they provide to reject those causing a poor spectrometric response, that is those affected by an induction share and possibly those affected by a charge or electronic noise share. 1. An ionizing radiation detection device comprising a detector of semi-conductor material to be biased with electrodes , including reading electrodes capable of collecting charges created in the detector during an interaction between the ionizing radiation and the semi-conductor material of the detector and which are connected to a reading circuit including:first processing means capable of providing a pulse when a charge has been collected by one of the reading electrodes, the pulse being formed with respect to a baseline,second means for processing the pulse provided by the first processing means including:means for determining a parameter comprising a time parameter of the pulse or an amplitude value of the pulse after a baseline crossing between the start and the end of the pulse,means for rejecting the pulse depending on the value of said parameter and for preserving the pulse if it is not rejected,means for operating the pulse preserved by the rejecting means.2. The detection device according to claim 1 , wherein the parameter is a time parameter selected from the rise time of the pulse claim 1 , the time elapsed between the start of the pulse and the first baseline crossing of the pulse.3. The detection device according to claim 1 , wherein the amplitude value of the pulse after a baseline crossing between the start and the end of the pulse is the minimum of the pulse.4. The detection device according to claim 1 , wherein claim 1 , when the pulse is analogue claim 1 , the time parameter corresponds to the duration during which the analogue ...

OPTICAL SENSOR AND LIQUID CRYSTAL PANEL PROVIDED WITH THE OPTICAL SENSOR

Provided is an optical sensor having such a novel structure that even if an intrinsic semiconductor region has a short substantial length in a direction parallel with a forward direction of a photodiode, a light receiving area can be ensured, whereby light detection sensitivity can be improved; and a liquid crystal panel including the optical sensor. The optical sensor includes: a photodiode () provided with a semiconductor film () having a p-type semiconductor region (), an intrinsic semiconductor region (), and an n-type semiconductor region (); a first gate line () formed above the intrinsic semiconductor region (), a negative voltage being applied to the first gate line; and a second gate line () formed above the intrinsic semiconductor region (), a positive voltage being applied to the second gate line, wherein a predetermined clearance is formed between the first gate line () and the second gate line (), above the intrinsic semiconductor region (). 1. An optical sensor comprising:a photodiode provided with a semiconductor film having a p-type semiconductor region, an intrinsic semiconductor region, and an n-type semiconductor region;a first gate line formed above the intrinsic semiconductor region, a negative voltage being applied to the first gate line; anda second gate line formed above the intrinsic semiconductor region, a positive voltage being applied to the second gate line,wherein the first gate line includes:a first boundary definition line that extends along a boundary between the intrinsic semiconductor region and the p-type semiconductor region and crosses the intrinsic semiconductor region; anda first extension line that extends from the first boundary definition line toward the second gate line,the second gate line includes:a second boundary definition line that extends along a boundary between the intrinsic semiconductor region and the n-type semiconductor region and crosses the intrinsic semiconductor region; anda second extension line that ...

SPARSELY-BONDED CMOS HYBRID IMAGER

A method and device for imaging or detecting electromagnetic radiation is provided. A device structure includes a first chip interconnected with a second chip. The first chip includes a detector array, wherein the detector array comprises a plurality of light sensors and one or more transistors. The second chip includes a Read Out Integrated Circuit (ROIC) that reads out, via the transistors, a signal produced by the light sensors. A number of interconnects between the ROIC and the detector array can be less than one per light sensor or pixel. 1. A device structure , comprising:a first chip comprising a detector array, wherein the detector array comprises a plurality of light sensors and one or more transistors; and the second chip comprises a Read Out Integrated Circuit (ROIC) that reads out, via the transistors, one or more signals produced by the light sensors, and', 'a number of interconnects between the ROIC and the detector array is less than one per light sensor., 'a second chip interconnected with the first chip, wherein2. The device structure of claim 1 , wherein:the detector array comprises a plurality of pixels, andeach pixel includes one of the light sensors and one or more of the transistors, wherein the transistors provide multiplexing of the signals produced by the light sensors and the number of interconnects is less than one per pixel.3. The device structure of claim 1 , wherein:the detector array comprises a plurality of pixels, andeach pixel includes one of the light sensors and the transistors comprising a buffer transistor, a select transistor, and a reset transistor.4. The device structure of claim 3 , wherein the detector array suppresses or prevents collection of signal charge by the transistors prior to collection of the signal charge by the light sensors.5. The device structure of claim 1 , wherein the detector array further comprises:a p-type doped semiconductor; and 'the p-type wells are more highly p-type doped than the surrounding p- ...

IMAGING APPARATUS, CONTROL METHOD THEREOF, AND PROGRAM

A flat panel sensor control unit reads image data from each region formed by dividing a flat panel. A write access control unit writes the image data read by the flat panel sensor control unit in a frame memory. A read access control unit starts reading the image data from the frame memory in response to that the writing of the image data to the frame memory becomes a predetermined state. 1an imaging unit in which a plurality of image sensors is arranged;an imaging control unit configured to read image data from each region formed by dividing the imaging unit;a write control unit configured to write the image data read by the imaging control unit in a recording unit; anda read control unit configured to start reading the image data from the recording unit in response to that the writing of the image data to the recording unit becomes a predetermined state.. An imaging apparatus comprising: This application is a Continuation of co-pending U.S. patent application No.: 13/237,478 filed Sep. 20, 2011, which claims the priority benefit of Japanese Patent Application No. 2010-217376 filed Sep. 28, 2010. The disclosures of the above-named applications are hereby incorporated by reference herein in their entirety.1. Field of the InventionThe present invention relates to a radiation imaging apparatus, a control method for the radiation imaging apparatus, and a program. Especially, the present invention is suitable for an X-ray imaging apparatus including a C-shaped arm used in an operating room, or the like.2. Description of the Related ArtThe radiation imaging apparatus is a real-time observation apparatus. The radiation imaging apparatus is used, for example, in an operation using catheters, to display the state of the moving catheter in real time in order to determine to which direction the operator is to move his/her hand without injuring the organ.In recent years, in the field of the radiation imaging apparatuses, in place of X-ray image intensifiers, in order to ...

SYSTEM AND METHOD FOR DETECTING PARTICLES WITH A SEMICONDUCTOR DEVICE

Systems and methods are described herein for detecting particles emitted by nuclear material. The systems comprise one or more semiconductor devices for detecting particles emitted from nuclear material. The semiconductor devices can comprise a charge storage element comprising several layers. A non-conductive charge storage layer enveloped on top and bottom by dielectric layers is mounted on a substrate. At least one top semiconductor layer can be placed on top of the top dielectric layer. A reactive material that reacts to particles, such as neutrons emitted from nuclear material, can be incorporated into the top semiconductor layer. When the reactive material reacts to a particle emitted from nuclear material, ions are generated that can alter the charge storage layer and enable detection of the particle. 1. A device for detecting an alpha particle , comprising: a first layer comprising silicon;', 'a second layer located below the first layer and comprising a non-conductive material;', 'a third layer located below the second layer, the third layer comprising a non-conductive material and a plurality of electrons giving the third layer a net negative charge;', 'a fourth layer located below the third layer and comp: sing a non-conductive material; and', 'a fifth layer located below the fourth layer and comprising silicon., 'a charge storage structure, the charge storage structure comprising2. The device of claim 1 , wherein the plurality of electrons in the third layer are stored as a first group on a first side of the third layer claim 1 , and as a second group on a second side of the third layer.3. The device of claim 1 , wherein a first electric field is present between the first layer and the third layer.4. The device of claim 1 , wherein a second electric field is present between the third layer and the fifth layer.5. The device of claim 1 , wherein the net negative charge of the third layer changes in response to the alpha particle. The present application is ...

IN SITU SYSTEM FOR DIRECT MEASUREMENT OF ALPHA RADIATION, AND RELATED METHOD FOR QUANTIFYING THE ACTIVITY OF ALPHA-EMITTING RADIONUCLIDES IN SOLUTION

A system for in situ nuclear measurement of alpha radiation of an effluent and a related method. The system includes: M diamond semiconductor detectors obtained by chemical vapour deposition, or silicon semiconductor detectors covered with a diamond layer, as alpha radiation detectors, configured to be immersed in the effluent, and to measure alpha radiation emitted by the effluent, M is an integer greater than or equal to 1; P measuring channels connected to the M alpha radiation detectors, P is an integer greater than or equal to 1 and less than or equal to M, each of the P measuring channels configured to provide a value or a sum of alpha activity values from the M alpha radiation detectors to which they are connected; and, if P is greater than 1, a mechanism for adding together results from the P measuring channels. 118-. (canceled)19. An in situ system for nuclear measurement of alpha radiation of an effluent , comprising:M diamond semiconductor detectors obtained by chemical vapour deposition, or silicon semiconductor detectors covered with a diamond layer, as alpha radiation detectors, configured to be immersed in the effluent, and to measure directly alpha radiation emitted by the effluent, wherein M is an integer greater than or equal to 1;P measuring channels connected to the M alpha radiation detectors, wherein P is an integer greater than or equal to 1 and less than or equal to M, and wherein each of the P measuring channels is configured to supply an alpha activity value or a sum of such values from the M alpha radiation detectors to which they are connected;wherein the system also includes, if P is greater than 1, means for adding together the results from the P measuring channels; andwherein the M alpha radiation detectors are individually calibrated by an alpha particle transport code based on Monte Carlo method, the alpha radiation detectors connected to a given measuring channel being calibrated in a same manner.20. The system according to claim 19 ...

Active matrix image sensing panel and apparatus

An active matrix image sensing panel includes a substrate and an image sensing pixel. The image sensing pixel is disposed on the substrate and includes a data line, a first thin film transistor (TFT) device and a second TFT device. The first TFT device includes a first electrode, a second electrode and a first gate electrode. The second electrode is coupled to the data line through a first via. The second TFT device includes a third electrode, a fourth electrode and a second gate electrode. The fourth electrode is electrically connected to the data line through a second via. The second electrode and the fourth electrode are connected with each other and overlap the data line.

PIXEL HAVING TWO SEMICONDUCTOR LAYERS, IMAGE SENSOR INCLUDING THE PIXEL, AND IMAGE PROCESSING SYSTEM INCLUDING THE IMAGE SENSOR

An image sensor having pixels that include two patterned semiconductor layers. The top patterned semiconductor layer contains the photoelectric elements of pixels having substantially 100% fill-factor. The bottom patterned semiconductor layer contains transistors for detecting, resetting, amplifying and transmitting signals charges received from the photoelectric elements. The top and bottom patterned semiconductor layers may be separated from each other by an interlayer insulating layer that may include metal interconnections for conducting signals between devices formed in the patterned semiconductor layers and from external devices. 2. The image sensor of claim 1 , wherein the interlayer insulating layer includes a first semiconductor layer including the first conductive plug claim 1 , wherein the interlayer insulating layer includes a second semiconductor layer including the second conductive plug claim 1 , and wherein the second semiconductor layer is disposed over the first semiconductor layer and the conductive pattern is interposed between the first and second semiconductor layers.3. The image sensor of claim 1 , wherein thefirst interlayer insulating layer is disposed on the first semiconductor layer, andwherein the first conductive plug penetrates the first interlayer insulating layer such that the first conductive plug contacts the at least one transistor of the first semiconductor layer.4. The image sensor of claim 1 , wherein the conductive pattern is disposed on the first interlayer insulating layer claim 1 , andwherein the second interlayer insulating layer is disposed on the first interlayer insulating layer to cover the conductive pattern.5. The image sensor of claim 4 , wherein the second conductive plug penetrates the second interlayer insulating layer to contact the conductive pattern.6. The image sensor of claim 1 , wherein the second semiconductor layer is disposed on the second interlayer insulating layer claim 1 , andwherein the second ...

SOLID-STATE IMAGING DEVICE

There is provided a solid-state imaging device in which a plurality of pixels is two-dimensionally arranged in a pixel region. Each of the pixels is formed in an island-shaped semiconductor. In this island-shaped semiconductor, a signal line N region and a P region are formed from the bottom. On an upper side surface of this P region, an N region and a P region are formed from an inner side of the island-shaped semiconductor. Above the P region, a P region is formed. By setting the P region and the P region to have a low-level voltage and setting the signal line N region to have a high-level voltage that is higher than the low-level voltage, signal charges accumulated in the N region are discharged to the signal line N region via the P region.

RADIOGRAPHIC IMAGING DEVICE

A radiographic imaging device that may detect irradiation states of radiation is provided. Pixels for radiation detection that are provided in a radiation detector of an electronic cassette are configured with characteristics thereof being alterable. The characteristics are set in accordance with the imaging conditions of a radiation image by a cassette control section of the electronic cassette. 1. A radiographic imaging device comprising: a plurality of radiation image acquisition pixels that are arranged in an array in an imaging region of a radiation image, the radiation image acquisition pixels acquiring image information representing the radiation image by respectively converting irradiated radiation to charges and accumulating the charges, and', 'a plurality of radiation detection pixels that detect irradiated radiation by respectively converting irradiated radiation to charges and accumulating the charges, the radiation detection pixels being disposed in the imaging region and a characteristic of the radiation detection pixels being alterable;, 'a radiation detector provided with'}an acquisition unit that acquires an imaging condition of the radiation image; anda setting unit that sets the characteristic in accordance with the imaging condition acquired by the acquisition unit.2. The radiographic imaging device according to claim 1 , wherein the setting unit sets the characteristic by switching between positions of the radiation detection pixels in accordance with the imaging condition.3. The radiographic imaging device according to claim 1 , further comprising amplifiers that amplify signals represented by the charges accumulated by the radiation detection pixels by a pre-specified amplification ratio claim 1 ,wherein the setting unit sets the characteristic by setting the amplification ratio in accordance with the imaging condition.4. The radiographic imaging device according to claim 2 , further comprising amplifiers that amplify signals represented by ...

SEMICONDUCTOR DEVICE

An object is to provide a UV sensor with high accuracy, which can be manufactured at low cost and formed over a flexible substrate. A semiconductor device includes a transistor having an oxide semiconductor film, and a voltage source electrically connected to a gate of the transistor, in which a threshold voltage of the transistor is changed by irradiating the oxide semiconductor film with UV rays; a change in the threshold voltage of the transistor is dependent on a wavelength of the UV rays with which the oxide semiconductor film is irradiated, and the voltage source adjusts a voltage output to the gate of the transistor. 1. (canceled)2. A semiconductor device comprising:a transistor comprising an oxide semiconductor layer, a gate and a gate insulating film between the oxide semiconductor layer and the gate, the oxide semiconductor layer including channel formation region;an operational amplifier comprising a first input terminal, a second input terminal and an output terminal, wherein the first input terminal is electrically connected to one of a source and a drain of the transistor at a first node; anda resistive element electrically connected between the first node and a second node.3. The semiconductor device according to claim 2 , wherein the semiconductor device is configured to detect an off-current upon irradiation of a UV ray on the oxide semiconductor layer.4. The semiconductor device according to claim 2 , wherein the second node is connected to a ground.5. The semiconductor device according to claim 2 , wherein the oxide semiconductor layer comprises oxygen claim 2 , indium claim 2 , gallium and zinc.6. The semiconductor device according to claim 2 , wherein the oxide semiconductor layer is formed above the gate insulating film.7. The semiconductor device according to claim 2 , wherein the oxide semiconductor layer is formed below the gate insulating film.8. The semiconductor device according to claim 2 , wherein the second input terminal of the ...

VISIBLE SENSING TRANSISTOR, DISPLAY PANEL AND MANUFACTURING METHOD THEREOF

A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent. 1. A light sensing transistor , comprising:a semiconductor disposed on a substrate;an ohmic contact disposed on the semiconductor;an etch stopping layer disposed on the ohmic contact;a source electrode and a drain electrode both disposed on the etch stopping layer;a passivation layer disposed on the source electrode and the drain electrode; anda gate electrode disposed on the passivation layer,wherein the etch stopping layer, the source electrode, and the drain electrode are comprised of the same material.2. The light sensing transistor of claim 1 , wherein the source electrode and the drain electrode comprise a bottom layer and an upper layer disposed on the bottom layer claim 1 , and the light sensing transistor senses visible wavelengths.3. The light sensing transistor of claim 2 , wherein the bottom layer and the etch stopping layer both comprise titanium claim 2 , and the upper layer comprises copper.4. The light sensing transistor of claim 3 , wherein the etch stopping layer has a thickness less than or equal to 300 Å.5. The light sensing transistor of claim 1 , wherein the semiconductor comprises an amorphous silicon claim 1 , and the light sensing transistor senses visible wavelengths.6. A display panel claim 1 , comprising:a light blocking layer disposed on a substrate;an insulating layer disposed on the ...

SEMICONDUCTOR DEVICE AND IMAGING APPARATUS

The invention relates to a semiconductor device having a vertical transistor bipolar structure of emitter, base, and collector formed in this order from a semiconductor substrate surface in a depth direction. The semiconductor device includes an electrode embedded from the semiconductor substrate surface into the inside and insulated by an oxide film. In the surface of the substrate, a first-conductivity-type first semiconductor region, a second-conductivity-type second semiconductor region, and a first-conductivity-type third semiconductor region are arranged, from the surface side, inside a semiconductor device region surrounded by the electrode and along the electrode with the oxide film interposed therebetween, the second semiconductor region located below the first semiconductor region, the third semiconductor region located below the second semiconductor region. The electrode is insulated from the first to third semiconductor regions, and current gain is variable through application of voltage to the electrode. 1. A semiconductor device having a vertical bipolar transistor structure in which an emitter region , a base region , and a collector region are formed in this order from a surface of a semiconductor substrate in a depth direction ,the semiconductor device further comprising: an electrode embedded from the surface of the semiconductor substrate into an inside of the semiconductor substrate, and insulated by an oxide film, whereinin the surface of the substrate, the semiconductor device has a structure in which a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type are arranged, from the surface side, inside a semiconductor device region surrounded by the electrode and along the electrode with the oxide film interposed therebetween, the second semiconductor region being located below the first semiconductor region and having a ...

METHOD OF VARYING GAIN OF AMPLIFYING PHOTOELECTRIC CONVERSION DEVICE AND VARIABLE GAIN PHOTOELECTRIC CONVERSION DEVICE

Provided is a method of varying the gain of an amplifying photoelectric conversion device and a variable gain photoelectric conversion device which are capable of achieving both signal processing under low illuminance and high-current processing under high light intensity, and thereby capable of securing a wide dynamic range. An amplifying photoelectric conversion part includes a photoelectric conversion element and amplification transistors forming a Darlington circuit. The sources and the drains of field-effect transistors are connected to the bases and the emitters of the amplification transistors, respectively. The gates of the field-effect transistors each function as a gain control part. 1. A method of varying gain of an amplifying photoelectric conversion device which includes: an amplifying photoelectric conversion part including a photoelectric conversion element and a plurality of transistors each having a collector , a base , and an emitter; and a plurality of first field-effect transistors each having a source , a drain , and a gate , and in whichthe sources and the drains of the first field-effect transistors are connected respectively between the emitters and the bases of the plurality of transistors,the photoelectric conversion element is connected to the base of a transistor selected from the plurality of transistors,the photoelectric conversion element is a device which performs photoelectric conversion of light input information being light intensity or light wavelength into an electric variable being electric current, electric charge, or voltage,at least one of the collectors of the plurality of transistors is a first output part,one of the emitters of the plurality of transistors is a second output part,the emitters of the plurality of transistors other than the second output part are connected respectively to the bases of the other transistors further excluding the selected transistor, to the base of which the photoelectric conversion element is ...

ION SENSOR AND DISPLAY DEVICE

The present invention provides an ion sensor and a display device which are capable of detecting positive ions and negative ions with high precision, at low cost. The ion sensor includes: a field effect transistor; an ion sensor antenna; and a capacitor, the ion sensor antenna and one terminal of the capacitor connected to a gate electrode of the field effect transistor, the other terminal of the capacitor receiving voltage. 1. An ion sensor comprising:a field effect transistor;an ion sensor antenna; anda capacitor,the ion sensor antenna and one terminal of the capacitor connected to a gate electrode of the field effect transistor,the other terminal of the capacitor receiving voltage.2. The ion sensor according to claim 1 ,wherein the voltage is variable.3. The ion sensor according to claim 1 ,wherein the field effect transistor is a first field effect transistor,the ion sensor antenna is a first ion sensor antenna,the capacitor is a first capacitor,the ion sensor further comprises a second field effect transistor, a second ion sensor antenna, and a second capacitor,the second ion sensor antenna and one terminal of the second capacitor are connected to a gate electrode of the second field effect transistor,the other terminal of the second capacitor receives voltage, andthe first capacitor and the second capacitor are different from each other in capacitance.4. The ion sensor according to claim 1 ,wherein the field effect transistor contains amorphous silicon or microcrystalline silicon.5. A display device comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the ion sensor according to ;'}a display including a display-driving circuit; anda substrate,wherein the field effect transistor, the ion sensor antenna, and at least one portion of the display-driving circuit are formed on the same main surface of the substrate. The present invention relates to an ion sensor and a display device. More specifically, the present invention relates to an ion sensor which ...

RADIOACTIVE RAY DETECTOR CARD

A radioactive ray detector card comprises semiconductor elements on a substrate, each having a plurality of first electrodes, provided on one of main surfaces thereof, and a second electrode, provided on other of main surfaces thereof; the substrate having first electrode wirings electrically connected with the plurality of first electrodes, and card edge portions, which transmit signals from the plurality of semiconductor elements to an external electric circuit; the second electrode corresponding to a second electrode identifier, for identifying the semiconductor elements; the first electrodes corresponding to first electrode identifiers, for identifying the plurality of first electrodes, respectively; and the first electrode wirings electrically connect between the first electrodes, corresponding to one of the first electrode identifiers on one semiconductor element of the plurality of semiconductor elements, and the first electrodes, corresponding to one of the same first electrode identifiers on the other semiconductor element. 1. A radioactive ray detector card comprising plural numbers of semiconductor elements on a substrate , whereineach of said semiconductor elements has plural numbers of first electrodes, which are provided on one of main surfaces thereof, and a second electrode, which is provided on other of main surfaces thereof, wherein plural numbers of pixel regions are constructed, each being able to detect radioactive rays, between said plural numbers of first electrodes and said second electrode, respectively;said substrate has first electrode wirings to be electrically connected with said plural numbers of first electrodes, respectively, and card edge portions, which transmit signals from said plural numbers of semiconductor elements to an external electric circuit;said second electrode is corresponded to a second electrode identifier, for identifying said semiconductor elements, respectively;said plural numbers of first electrodes are ...

RADIOACTIVE RAY DETECTOR AND RADIOACTIVE RAY DETECTING APPARATUS

An object of the present invention is to provide a radioactive ray detector for enabling to reduce the parasitic capacity lower than that of the conventional art, which is generated between the semiconductor elements of the radioactive ray detectors neighboring with, and a radioactive ray detecting apparatus applying that therein. The radioactive ray detector, comprises a substrate, a first semiconductor element and a second semiconductor element, which are provided to face to each other with positioning the substrate therebetween, a first electrode pattern, which is electrically connected with the first semiconductor element on a surface facing to an opposite side of the substrate, and a second electrode pattern, which is electrically connected with the second semiconductor element on a surface facing to an opposite side of the substrate, wherein the first electrode pattern and the second electrode pattern are arranged not to overlap with each other, when seeing through the substrate in a direction of thickness thereof. 1. A radioactive ray detector , comprising:a substrate;a first semiconductor element and a second semiconductor element, which are provided to face to each other with positioning said substrate therebetween;a first electrode pattern, which is electrically connected with said first semiconductor element on a surface facing to an opposite side of said substrate; anda second electrode pattern, which is electrically connected with said second semiconductor element on a surface facing to an opposite side of said substrate, whereinsaid first electrode pattern and said second electrode pattern are arranged not to overlap with each other, when seeing through said substrate in a direction of thickness thereof.2. The radioactive ray detector claim 1 , as described in the claim 1 , whereinsaid first electrode pattern is formed on a first wiring member,said first wiring member is fixed on said first semiconductor element through a conductive adhesive, which is ...

X-ray detectors

An X-ray detector may include a silicon substrate including a first area and a second area; a plurality of pixels in the first area configured to detect X-rays; a control pad in the second area configured to supply a common control signal to the plurality of pixels; and/or a power supply pad in the first area configured to supply a power supply voltage to groups of pixels grouped from among the plurality of pixels.

Solid-state image sensor, driving method and electronic apparatus

There is provided a solid-state image sensor including a pixel region in which a plurality of pixels of a preset plurality of colors are arranged in a two-dimensional matrix shape, a vertical signal line corresponding to a pixel column of the pixel region, a trigger line corresponding to a pixel row of the pixel region and supplying a trigger pulse corresponding to each of the colors of the plurality of pixels, and a trigger pulse supply part supplying, via the trigger line, the trigger pulse in a manner that a signal voltage of each pixel of a predetermined color in the pixel region is read out for each pixel row via the vertical signal line, and thereafter, a signal voltage of each pixel of another color in the pixel region is read out for each pixel row via the vertical signal line.

SENSOR COMPRISING AT LEAST A VERTICAL DOUBLE JUNCTION PHOTODIODE, BEING INTEGRATED ON A SEMICONDUCTOR SUBSTRATE AND CORRESPONDING INTEGRATION PROCESS

An embodiment relates to a sensor being integrated on a semiconductor substrate and comprising at least a vertical double-junction photodiode, in turn comprising at least one first and one second p-n junction formed in said semiconductor substrate, as well as at least an anti-reflection coating formed on said photodiode. Said at least one anti-reflection coating comprises at least one first and one second different anti-reflection layer being suitable to obtain a responsivity peak in correspondence with a predetermined wavelength of an incident optical signal on said sensor. An embodiment also relates to an integration process of such a sensor, as well as to an ambient light sensor made by means of such a sensor. 134-. (canceled)35. A method , comprising:receiving a wavelength of electromagnetic radiation through a first material having a first thickness approximately equal to one fourth of the wavelength and through a second material having a second thickness approximately equal to one half of the wavelength; andgenerating a first current across a first p-n junction in response to the received wavelength; andgenerating a second current across a second p-n junction in response to the received wavelength.36. The method of wherein the first p-n junction is disposed over the second p-n junction.37. The method of wherein the first material is disposed over the second material.38. The method of claim 35 , further comprising combining the first and second currents.39. The method of claim 35 , further comprising summing the first and second currents.40. The method of claim 35 , further comprising subtracting one of the first and second currents from the other of the first and second currents.41. The method of claim 35 , further comprising adjusting a brightness of an apparatus in response to at least one of the first and second currents.42. A method claim 35 , comprising:receiving electromagnetic radiation at a first junction and at a second junction disposed under the ...

RADIOGRAPHIC APPARATUS

A radiographic apparatus includes an X-ray detection sensor having a two-dimensional detector plane for detecting an intensity distribution of X-rays, a body internally containing the X-ray detection sensor, a supporting member having a supporting surface for supporting the X-ray detection sensor across the detector plane and which fixes the X-ray detection sensor to an inner bottom surface of the body, and a circuit board on which is mounted a circuit for reading out a detection signal from the X-ray detection sensor. Furthermore, in the radiographic apparatus, the supporting member forms a space between the supporting member and the inner bottom surface of the body in a peripheral portion of the supporting member. At least a part of the circuit board is arranged in the space. 1. A radiographic apparatus comprising:a X-ray detection sensor having a detector plane for detecting an X-ray;a read circuit board which reads out a detection signal from said X-ray detection sensor;a body which contains said X-ray detection sensor;a plate-like base which supports said X-ray detection sensor; anda structural body which supports said base against an inner bottom surface of said body, wherein a first space is formed inside of a projection plane of said X-ray detection sensor as viewed from an X-ray incidence direction and between the inner bottom surface of said body and a surface on an opposite side to a supporting surface of said X-ray detection sensor in said base, and wherein said read circuit board is arranged in said first space.2. The apparatus according to claim 1 , wherein a second space is formed outside of a projection plane of said X-ray detection sensor as viewed from an X-ray incidence direction and adjacent to said first space in which said read circuit board is arranged claim 1 , andfurther comprising an electric circuit board other than said read circuit board arranged in said second space.3. The apparatus according to claim 2 , wherein said electric circuit ...

MANUFACTURING METHOD OF ELECTRON MULTIPLIER SUBSTRATE, MANUFACTURING METHOD OF ELECTRON MULTIPLIER AND MANUFACTURING METHOD OF RADIATION DETECTOR

An underlayer is formed on a side wall of a through hole out of the side wall of the through hole and a substrate main surface, with a main surface having a low adhesion to a conductive layer disposed as an upper surface, and the conductive layer is formed on the substrate main surface and the side wall of the through hole on which the underlayer is formed, and the underlayer formed on the side wall of the through hole is selectively etched. 1. A manufacturing method of an electron amplifier substrate , which is the manufacturing method of a substrate used for a radiation detector that performs detection of a radiation by amplifying an electron in a gas , being an electron amplifier substrate with a conductive layer and a through hole formed thereon , the conductive layer having a layer adhered to a substrate main surface , the method comprising:forming an underlayer on a side wall of the through hole out of the side wall of the through hole and the substrate main surface, with a main surface set as an upper surface where adhesion to the conductive layer is low;forming the conductive layer on the substrate main surface and on the side wall of the through hole where the underlayer is formed; andselectively etching the underlayer formed on the side wall of the through hole.2. The method of claim 1 , wherein the substrate is a photosensitive glass substrate claim 1 , and the through hole is formed by irradiation of a ultraviolet ray.3. The method of claim 1 , wherein the substrate has front/back surfaces claim 1 , and the conductive layer is formed on the front/back surfaces of the substrate.4. The method of claim 1 , wherein a plurality of through holes are formed claim 1 , each of them having a circular shape in a plan view claim 1 , and formed on the substrate at a specific interval.5. The method of claim 1 , wherein an etching time required for the etching step is set in a period until the conductive layer formed on the underlayer formed on the side wall of the ...

SEMICONDUCTOR STRUCTURE, METHOD OF OPERATING SAME, AND PRODUCTION METHOD

A semiconductor structure includes a semiconductor layer of a first conductivity type, a photosensitive zone configured such that photogenerated charges may be accumulated in a first potential well, a region of the first conductivity type, formed in the semiconductor layer, for temporarily storing the photogenerated charges in a second potential well, a transfer gate between the region of the second conductivity type and the photosensitive zone for defining a potential barrier between the first and second potential wells during a non-transfer phase, and for eliminating the potential barrier between the first and second potential wells during a transfer phase, and a readout structure for reading out the temporarily stored photogenerated charges, which includes a JFET, the gate of which is formed by the region of the second conductivity type. 1. A semiconductor structure comprisinga semiconductor layer of a first conductivity type,a photosensitive zone configured such that photogenerated charges may be accumulated in a first potential well;a region of the first conductivity type, formed in the semiconductor layer, for temporarily storing the photogenerated charges in a second potential well;a transfer gate between the region of the second conductivity type and the photosensitive zone for defining a potential barrier between the first and second potential wells during a non-transfer phase, and for eliminating the potential barrier between the first and second potential wells during a transfer phase; anda readout structure for reading out the temporarily stored photogenerated charges, which comprises a WET, the gate of which is formed by the region of the second conductivity type.2. The semiconductor structure as claimed in claim 1 , wherein the photosensitive zone is implemented as a photogate or buried photogate.3. The semiconductor structure as claimed in claim 1 , wherein the photosensitive zone is configured as a p-n photodiode which comprises a p-n junction claim ...

SOLID-STATE IMAGE SENSOR AND ELECTRONIC DEVICE

There is provided a solid-state image sensor including a plurality of unit pixels arranged thereon, the plurality of unit pixels each including a light receiving section which stores a charge generated by photoelectric conversion, a signal storage section which is connected to the light receiving section and has a structure of a MOS capacitor, and a signal output section to which a gate electrode of the MOS capacitor is connected. 1. A solid-state image sensor comprising: a light receiving section which stores a charge generated by photoelectric conversion,', 'a signal storage section which is connected to the light receiving section and has a structure of a MOS capacitor, and', 'a signal output section to which a gate electrode of the MOS capacitor is connected., 'a plurality of unit pixels arranged thereon, the plurality of unit pixels each including'}2. The solid-state image sensor according to claim 1 ,wherein the signal output section includes a transistor and outputs, to a vertical signal line of a pixel array in which the plurality of unit pixels arranged, a signal based on a change in a potential of the gate electrode occurring in accordance with a charge stored in the signal storage section.3. The solid-state image sensor according to claim 2 ,wherein the light receiving section and the signal storage section are connected via a transfer transistor, andwherein the charge stored in the light receiving section is transferred via the transfer transistor, and thereafter, the charge stored in the signal storage section is depleted.4. The solid-state image sensor according to claim 3 ,wherein the charge stored in the signal storage section is depleted by discharging the charge stored in the signal storage section via the light receiving section with a potential of the transfer transistor high and a potential of the gate electrode of the MOS capacitor low.5. The solid-state image sensor according to claim 3 , further comprising:a depletion transistor connected to ...

Monolithic multispectral visible and infrared imager

The invention relates to a radiation detection device including a silicon substrate and an infrared photodiode made of a material optimized for infrared detection. The substrate comprises a photosensitive area, readout circuits, and interconnects formed in an electrically-insulating material. The interconnects and the metal contact connect the readout circuits, the photosensitive areas, and the infrared photodiode. The detection device also comprises an infrared radiation filtering structure which covers the photosensitive area without covering the infrared photodiode.

SOLID STATE RADIATION DETECTOR WITH ENHANCED GAMMA RADIATION SENSITIVITY

A silicon carbide Schottky diode solid state radiation detector that has an electron donor layer such as platinum placed over and spaced above the Schottky contact to contribute high energy Compton and photoelectrical electrons from the platinum layer to the active region of the detector to enhance charged particle collection from incident gamma radiation. 1. A solid state radiation detector comprising:a Schottky diode having an active semiconductor region and a Schottky contact over at least a portion of the active semiconductor region;a layer of a Compton and photoelectron source material that reacts with incident gamma radiation to interact with electrons surrounding source atoms of the source material to produce high energy Compton and photoelectric electrons to penetrate into the active region of the Schottky diode, the layer of the Compton and photoelectron source material being supported above the Schottky contact; anda layer of fluid interposed between the Schottky contact and the layer of the Compton and photoelectron source material.2. The solid state radiation detector of wherein the Compton and photoelectron source material is selected from platinum claim 1 , or other materials with atomic numbers substantially equal to or greater than platinum.3. The solid state radiation detector of wherein the Compton and photoelectron source material is platinum.4. The solid state radiation detector of wherein a Schottky contact is layered on top of the active region which comprises silicon carbide.5. The solid state radiation detector of wherein a thickness of the layer of the Compton and photoelectron source material is determined using a gamma radiation transport method to enhance a number of photoelectrons from the desired incident gamma radiation energy to deposit their energy in the active region of the Schottky diode.6. The solid state radiation detector of wherein the thickness of the layer of fluid is user variable.7. The solid state radiation detector of ...

SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS

A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in the peripheral circuit portion is composed of a silicon oxynitride film, a gate insulating film of aMOS transistor in the pixel portion is composed of a silicon oxynitride film, and an oxide film is disposed just above the photoelectric conversion portion in the pixel portion. 1. A solid-state imaging device comprising in a semiconductor substrate:a pixel portion includes a photoelectric conversion portion that converts incident light to an electric signal and at least one or more transistors, each transistor comprises a gate insulating film; andwherein an insulating film formed on the surface of the photoelectric conversion portion is different material from the gate insulating film.2. The solid-state imaging device according to claim 1 , further comprisinga peripheral circuit portion includes at least one or more peripheral transistors, each peripheral transistor comprises a gate insulating film; andwherein the gate insulating film of the peripheral transistors are same material as the gate insulating film of the transistors in the pixel portion.3. The solid-state imaging device according to claim 1 , wherein:the gate insulating film of each transistor comprises a silicon oxynitride.4. The solid-state imaging device according to claim 1 , wherein:the insulating film formed on the surface of the photoelectric conversion portion comprises a silicon oxide. The present application is a continuation of U.S. patent application Ser. No. 12/509,995 filed Jul. 27, 2009, which is incorporated herein by reference, and claims the benefit of Japanese Patent Application JP 2008-199520 filed on Aug. 1, 2008, and Japanese Patent Application ...

Image sensors with photoelectric films

An image sensor with an organic photoelectric film for converting light into charge may be provided. The image sensor may include an array of image sensor pixels. Each image sensor pixel may include a charge-integrating pinned diode that collects photo-generated charge from the photoelectric film during an integration period. An anode electrode may be coupled to an n+ doped charge injection region in the charge-integrating pinned diode and may be used to convey the photo-generated charge from the photoelectric film to the charge-integrating pinned diode. Upon completion of a charge integration cycle, a first transfer transistor gate may be pulsed to move the charge from the charge-integrating pinned diode to a charge-storage pinned diode. The charge may be transferred from the charge-storage pinned diode to a floating diffusion node for readout by pulsing a gate of a second charge transfer transistor.

METHOD OF MANUFACTURING DETECTION DEVICE, DETECTION DEVICE, AND DETECTION SYSTEM

Before transmitting a print job to a printing apparatus, a CPU of a print processing apparatus determines whether paper information designated in the print job has been registered in a paper information database of the print processing apparatus. If the paper information has not been registered, the CPU extracts paper information similar to the paper information designated in the print job from those stored in the paper information database of the print processing apparatus. Furthermore, the CPU copies information about the dependency on the printing apparatus, which is included in the extracted paper information (printer dependency information) to the paper information designated in the print job. Then, the CPU registers the paper information designated in the print job, to which the printer dependency information has been copied, in a paper information database of the printing apparatus and transmits the print job to the printing apparatus. 1. A method of manufacturing a detection device that includes a plurality of conversion elements disposed on a substrate , each of the conversion elements comprising a first electrode disposed on the substrate , a second electrode disposed above the first electrode , a semiconductor layer disposed between the first electrode and the second electrode , and an impurity semiconductor layer disposed between the semiconductor layer and the second electrode , the method comprising:a film forming step of successively forming, over the plural first electrodes, a semiconductor film becoming the semiconductor layer, an impurity semiconductor film becoming the impurity semiconductor layer, and an electroconductive film becoming the second electrode, in mentioned order;a first removing step of partly removing the electroconductive film with use of a resist formed on the electroconductive film, thereby forming an electroconductive layer on each of the plural first electrodes;a second removing step of removing, with use of the resist, a part ...

Semiconductor device and method of fabricating the same

A semiconductor device includes a substrate including a front side and a back side opposite the front side, first P-type regions located adjacent to the back side and spaced apart from each other in the substrate, N-type regions located under the first P-type regions and spaced apart from each other in the substrate, and second P-type regions located adjacent to the back side and located between the first P-type regions.

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) IMAGE SENSOR

An image sensor includes a photodiode configured to convert a received optical signal into photo charges and to output the photo charges, a sensing node adjacent to the photodiode and configured to sense the photo charges, the sensing node including a first dopant region having dopants of a first conductivity type, and a second dopant region having dopants of a second conductivity type, the second dopant region surrounding the first dopant region, and a driver configured to convert the sensed photo charges into an electrical signal and to output the electrical signal. 1. An image sensor , comprising:a photodiode configured to convert a received optical signal into photo charges and to output the photo charges; a first dopant region having dopants of a first conductivity type, and', 'a second dopant region having dopants of a second conductivity type, the second dopant region surrounding the first dopant region; and, 'a sensing node adjacent to the photodiode and configured to sense the photo charges, the sensing node includinga driver configured to convert the sensed photo charges into an electrical signal and to output the electrical signal.2. The image sensor as claimed in claim 1 , wherein the driver includes a selection transistor configured to operate as a source follower outputting a signal according to a voltage level of the sensing node claim 1 , a source of the selection transistor being connected to the first dopant region.3. The image sensor as claimed in claim 2 , wherein a drain of the selection transistor is connected to an output terminal.4. The image sensor as claimed in claim 3 , further comprising a first voltage and a current source connected in series to the drain of the selection transistor.5. The image sensor as claimed in claim 4 , further comprising a third dopant region adjacent to the second dopant region and having dopants of the first conductivity type claim 4 , the third dopant region being disposed around the sensing node.6. The image ...

Organic image sensor with optical black regions

An organic image sensor includes a first organic photoelectric conversion pixel circuit on an active region of a substrate and a second organic photoelectric conversion pixel circuit on an optical black region of the substrate. The first organic photoelectric conversion pixel circuit includes a first organic photoelectric conversion element configured to generate charges responding to incident light and a first readout circuit configured to receive a first input signal including the charges generated in the first organic photoelectric conversion element. The second organic photoelectric conversion pixel circuit includes a second organic photoelectric conversion element and a second readout circuit configured to receive a second input signal generated irrespective of the incident light.

OPTICALLY TRIGGERED SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME

A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the semiconductor body. The optical thyristor is configured to receive incident radiation to generate a first electric current, and the first amplifying thyristor is configured to increase the first electric current from the optical thyristor to at least a threshold current. The switching thyristor switches to the conducting state in order to conduct a second electric current from the anode and through the semiconductor body. 1. A method comprising:providing a semiconductor body extending between opposite first and second sides, the semiconductor body including doped layers that form first and second dopant junctions located between the first and second sides;removing a first portion of a first layer of the doped layers that is disposed along the first side of the semiconductor body to expose a second layer of the doped layers, the first portion of the first layer removed to provide an activation portion of the semiconductor body that receives incident radiation to generate electric current in an optical thyristor of the semiconductor body;removing a second portion of the first layer of the doped layers to expose the second layer in an intermediate portion of the semiconductor body, the intermediate portion disposed between an amplifying thyristor and a switching thyristor of the semiconductor body;conductively coupling a conductive terminal between the first layer in the amplifying thyristor of the semiconductor body and the second layer that is exposed in the intermediate portion; andconductively coupling an anode to the first layer of the doped layers and a cathode to the doped layers at the second side of the semiconductor body.2. The method of claim 1 , ...

Image sensor having compressive layers

An image sensor device including a semiconductor substrate that includes an array region and a black level correction region. The array region contains a plurality of radiation-sensitive pixels. The black level correction region contains one or more reference pixels. The substrate has a front side and a back side. The image sensor device includes a first compressively-stressed layer formed on the back side of the substrate. The first compressively-stressed layer contains silicon oxide, and is negatively charged. The second compressively-stressed layer contains silicon nitride, and is negatively charged. A metal shield is formed over at least a portion of the black level correction region. The image sensor device includes a third compressively-stressed layer formed on the metal shield and the second compressively-stressed layer. The third compressively-stressed layer contains silicon oxide. A sidewall of the metal shield is protected by the third compressively-stressed layer.

HIGH ENERGY, REAL TIME CAPABLE, DIRECT RADIATION CONVERSION X-RAY IMAGING SYSTEM FOR CD-TE AND CD-ZN-TE BASED CAMERAS

A calibrated real-time, high energy X-ray imaging system is disclosed which incorporates a direct radiation conversion, X-ray imaging camera and a high speed image processing module. The high energy imaging camera utilizes a Cd—Te or a Cd—Zn—Te direct conversion detector substrate. The image processor includes a software driven calibration module that uses an algorithm to analyze time dependent raw digital pixel data to provide a time related series of correction factors for each pixel in an image frame. Additionally, the image processor includes a high speed image frame processing module capable of generating image frames at frame readout rates of greater than ten frames per second to over 100 frames per second. The image processor can provide normalized image frames in real-time or can accumulate static frame data for substantially very long periods of time without the typical concomitant degradation of the signal-to-noise ratio. 1. An x-ray imaging system , comprising:{'b': '44', 'an x-ray imaging device with an output providing an array of pixels values for producing multiple different individual image frames (),'}{'b': '96', 'each said pixel value generated responsive to absorption of impinging high energy x-ray gamma ray radiation, converted by an analog to digital converter () (ADC) providing, at the output of the imaging device, the array of pixel values, each pixel value with a first bit depth (N),'}{'b': '45', 'each individual frame of said multiple individual frames comprising the array () of the pixel values with the first bit depth (N); and'}{'b': 24', '47', '47, 'an image processor connected to receive the array of pixel values from the output of the imaging device, the image processor including a processor () calculating final image pixel values () of a second bit depth (M) from the pixel values of the first bit depth (N) of the different individual frames, the image processor outputting frames of the final image pixel values () of an x-ray image to ...

Optically Controlled Power Devices

An electro-optically triggered power switch is disclosed utilizing a wide bandgap, high purity III-nitride semiconductor material such as BN, AN, GaN, InN and their compounds. The device is electro-optically triggered using a laser diode operating at a wavelength of 10 to 50 nanometers off the material's bandgap, and at a power level of 10 to 100 times less than that required in a conventionally triggered device. The disclosed device may be configured as a high power RF MOSFET, IGBT, FET, or HEMT that can be electro-optically controlled using photons rather than an electrical signal. Electro-optic control lowers the power losses in the semiconductor device, decreases the turn-on time, and simplifies the drive signal requirements. It also allows the power devices to be operated from the millisecond to the sub-picosecond timeframe, thus allowing the power device to be operated at RF frequencies (i.e., kilohertz to terahertz range) and at high temperatures where the bandgap changes with temperature.

SEMICONDUCTOR DEVICE

Provided is a semiconductor device having good properties. Particularly, the semiconductor device is provided which can improve imaging properties. The semiconductor device (CMOS image sensor) includes a plurality of pixels, each having a photodiode PD for generating a charge by receiving light, and a transfer transistor TX for transferring the charge generated by the photodiode PD. The semiconductor device further includes an active region AcTP with the photodiode, and an active region AcG located on an upper side of the region AcTP in the planar direction and having a contact Pg to which a ground potential is applied. A gettering region GET is disposed in the active region AcG. 1. A semiconductor device , comprising;a first active region and a second active region formed at a first main surface of a semiconductor substrate, said first active region and said second active region being respectively surrounded by an element isolation region made of an insulator in a plan view;a photodiode formed in the first active region;a gate electrode of a transfer transistor for transferring a charge generated by the photodiode, said gate electrode being formed in the first active region, and disposed adjacent to the photodiode in the plan view;a contact coupled to the second active region and to which a ground potential is applied; anda gettering region formed at the first main surface of the second active region.2. The semiconductor device according to claim 1 ,wherein the photodiode and the gettering region are disposed over a first semiconductor region of a first conduction type formed in the semiconductor substrate, andwherein the ground potential is applied to the first semiconductor region via the contact and the gettering region.3. The semiconductor device according to claim 1 , further comprising a pixel array with a plurality of pixels arranged in an array claim 1 , each pixel including the photodiode and the gate electrode of the transfer transistor claim 1 ,wherein ...

HIGH SENSITIVITY IMAGE SENSORS AND METHODS OF OPERATING THE SAME

A high sensitivity image sensor including a pixel, the pixel including a single electron field effect transistor (SEFET), the SEFET including a first conductive type well in a second conductive type substrate, second conductive type source and drain regions in the well and a first conductive type gate region in the well between the source and the drain regions. 1a substrate;a first well in the substrate, the first well being configured to be a photoelectric transformation region to generate charges by incident light;source and drain regions in the first well;a gate region in the first well between the source and drain regions, the gate region being configured to accumulate the generated charges; anda channel region on the gate region in the substrate, the channel region being configured to connect the source and drain regions; anda selective transistor being configured to control an electrical connection between the source region and a source follower transistor.. A high sensitivity image sensor, comprising: This application is a continuation application of U.S. application Ser. No. 12/662,327, filed Apr. 12, 2010, which claims priority under 35 U.S.C. §119 to Korean Patent Application No. 10-2009-0031396, filed on Apr. 10, 2009, in the Korean Intellectual Property Office (KIPO), the entire contents of which is incorporated herein in by reference.1. FieldExample embodiments of the inventive concepts relate to high sensitivity image sensors, and more particularly, to high sensitivity image sensors that may be capable of sensing a single electron.2. Description of the Related ArtAn image sensor may transform photonic images into electric signals. Recent advances in computer and communication industries have led to strong demand for high performance image sensors in various consumer electronic devices including, for example, digital cameras, camcorders, PCS (Personal Communication System), game devices, security cameras, and medical micro cameras.Widely-used CCD image ...

UPSTREAM DIRECT X-RAY DETECTION

A radiation beam, for example a therapeutic radiation beam such as an IMRT or VMAT X-ray beam is monitored using a Monolithic Active Pixel Sensor (MAPS) detector. Photons of the radiation beam can interact with the MAPS detector, and the radiation beam configuration can be estimated from the determined positions of the interactions. The detector is made sufficiently thin that it interacts only very weakly with the X-ray photons. For example, less than 1 in 10of the X-ray photons might interact with the detector. Hence, the disturbance to the X-ray beam is negligible. 1. A method of monitoring a radiation beam , the method comprising:placing in the beam a monolithic active pixel sensor (MAPS) detector;exposing the MAPS detector to the radiation beam, such that photons of the radiation beam can interact with the MAPS detector;determining a position of each identified interaction; andestimating the radiation beam configuration from the determined positions of the interactions.2. A method as claimed in claim 1 , comprising:exposing the MAPS detector to the radiation beam for a plurality of successive frames; and further comprising:in each frame, identifying each interaction between a photon of the radiation beam and the MAPS detector;determining a position of each identified interaction; andestimating the radiation beam configuration from the determined positions of the interactions over the plurality of frames.3. A method as claimed in claim 1 , further comprising:distinguishing between interactions between photons of the radiation beam and the MAPS detector, and interactions between electrons and the MAPS detector.4. A method as claimed in claim 3 , comprising:identifying each interaction between a photon of the radiation beam and the MAPS detector, based on a shape of a cluster of detector pixels excited by the interaction.5. A method as claimed in claim 4 , comprising:identifying an interaction between a photon of the radiation beam and the MAPS detector, in the ...

SOLID-STATE IMAGE PICKUP DEVICE

According to one embodiment, a solid-state image pickup device includes a photoelectric converter, transfer, reset and amplifier transistors and a floating diffusion layer formed on a semiconductor substrate. The photoelectric converter coverts incident light to a signal charge. The transfer transistor transfers the signal charge converted by the photoelectric converter. The floating diffusion layer stores the signal charge transferred by the transfer transistor. The reset transistor resets the signal charge stored in the floating diffusion layer. The amplifier transistor amplifies the signal charge stored in the floating diffusion layer. Source and drain regions of the reset transistor, and its channel region are formed in an L-shape on the semiconductor substrate. 1. A solid-state image pickup device comprising:a first photoelectric converter which is formed on a semiconductor substrate and which coverts incident light to a signal charge;a transfer transistor which is formed on the semiconductor substrate and which transfers the signal charge converted by the first photoelectric converter;a first floating diffusion layer which is formed on the semiconductor substrate and which stores the signal charge transferred by the transfer transistor;a reset transistor which is formed on the semiconductor substrate and which resets the signal charge stored in the first floating diffusion layer; andan amplifier transistor which is formed on the semiconductor substrate and which amplifies the signal charge stored in the first floating diffusion layer,wherein a source region and a drain region of the reset transistor, and its channel region between the source region and the drain region are formed in an L-shape on the semiconductor substrate.2. The solid-state image pickup device according to claim 1 , wherein the source region of the reset transistor and the first floating diffusion layer are formed from a common diffusion region.3. The solid-state image pickup device ...

IMAGE SENSORS INCLUDING CHANNEL STOP REGIONS SURROUNDING PHOTODIODES AND METHODS OF FABRICATING THE SAME

Image sensors are provided. In the image sensor, an area of a device isolation layer may be reduced and elements may be isolated from each other by a channel stop region extending between the photoelectric conversion region and the device isolation layer, such that a dark current property of the image sensor may be improved. 1. An image sensor comprising:a substrate including a plurality of pixel regions;a photoelectric converting part in the substrate in each of the pixel regions;a channel stop region extending along a periphery of the photoelectric converting part;a pixel voltage applying region spaced apart from the photoelectric converting part with the channel stop region interposed between the pixel voltage applying region and the photoelectric converting part; anda first device isolation layer adjacent to one sidewall of the pixel voltage applying region, the first device isolation layer spaced apart from the photoelectric converting part with the channel stop region interposed between the first device isolation layer and the photoelectric converting part.2. The image sensor of claim 1 , further comprising:a transfer gate on the substrate at a side of the photoelectric converting part in each of the pixel regions;a floating diffusion region adjacent to a side of the transfer gate and spaced apart from the photoelectric converting part in each of the pixel regions;a reset gate adjacent to the floating diffusion region and spaced apart from the transfer gate in each of the pixel regions: anda reset drain region adjacent to the reset gate and spaced apart from the floating diffusion region in each of the pixel regions,wherein the reset drain region is the pixel voltage applying region; andwherein the first device isolation layer is adjacent to the reset drain region.3. The image sensor of claim 2 , wherein the first device isolation layer is between the floating diffusion region in one pixel region and the reset drain region in another pixel region adjacent to ...

IMAGE SENSORS INCLUDING WELL REGIONS OF DIFFERENT CONCENTRATIONS

An image sensor includes a high concentration well region in contact with a device isolation layer extending along a periphery of a photoelectric converting part, which can improve dark current properties of the image sensor. The image sensor also includes a low concentration well region in contact with a sidewall of the device isolation layer overlapped with a transfer gate, which can improve image lag properties of the image sensor. Related fabrication methods are also discussed. 1. An image sensor , comprising:a substrate including a plurality of pixel regions;a device isolation layer on the substrate to define active regions in the pixel regions, respectively;a photoelectric converting part in the substrate in each of the pixel regions;a transfer gate on the substrate at a side of the photoelectric converting part;a high concentration well region in the substrate adjacent to the device isolation layer and extending along a periphery of the photoelectric converting part; anda low concentration well region in the substrate adjacent to a sidewall of the device isolation layer overlapped with the transfer gate.2. The image sensor of claim 1 , wherein a horizontal distance between the high concentration well region and the sidewall of the device isolation layer overlapped with the transfer gate is about 0.1 micrometer (μm) or more.3. The image sensor of claim 1 , wherein the substrate claim 1 , the low concentration well region claim 1 , and the high concentration well region are doped with dopants of a same conductivity type.4. The image sensor of claim 3 , wherein a dopant concentration of the low concentration well region is greater than that of the substrate and less than that of the high concentration well region.5. The image sensor of claim 1 , further comprising:a floating diffusion region adjacent to a side of the transfer gate; anda reset gate adjacent to the floating diffusion region and spaced apart from the transfer gate,wherein the low concentration well ...

RADIATION DETECTOR AND METHOD OF MANUFACTURING THE SAME

A radiation detector includes a sensor substrate and a scintillator layer. The sensor substrate is configured to be capable of performing photoelectric conversion. The scintillator layer includes a first area and a second area, the first area including an activator, the second area including the activator with a concentration lower than the concentration of the activator in the first area, the scintillator layer being provided on the sensor substrate so that the first area and the second area are arranged in a thickness direction of the scintillator layer and the first area is arranged from an end portion on a side of the sensor substrate in the scintillator layer in the thickness direction. 1. A radiation detector , comprising:a sensor substrate configured to be capable of performing photoelectric conversion; anda scintillator layer including a first area and a second area, the first area including an activator, the second area including the activator with a concentration lower than the concentration of the activator in the first area, the scintillator layer being provided on the sensor substrate so that the first area and the second area are arranged in a thickness direction of the scintillator layer and the first area is arranged from an end portion on a side of the sensor substrate in the scintillator layer in the thickness direction.2. The radiation detector according to claim 1 , whereinthe scintillator layer has a thickness of not less than 300 μm and not more than 800 μm.3. The radiation detector according to claim 2 , whereinthe scintillator layer includes a phosphor material of CsI as a main component, and the activator includes Tl.4. The radiation detector according to claim 3 , whereinthe first area has a thickness of not less than 2% and not more than 20% of the thickness of the scintillator layer.5. The radiation detector according to claim 4 , whereinthe thickness of the first area is not less than 5% and not more than 15% of the thickness of the ...

RADIATION DETECTOR

In the radiation detector, a capacitor is connected between a connecting wire which is connected with a preamplifier (amplifier) and another connecting wire. Specifically, the capacitor is connected between the connecting wire and another connecting wire which has the lowest electric resistance with respect to a signal wire among connecting wires connected with a radiation detecting element. This prevents electric current produced by static electricity from flowing to the signal wire and prevents the signal wire or the preamplifier from being damaged by static electricity. A circuit element for a countermeasure against static electricity is not provided at the signal wire, and therefore input capacitance of the preamplifier is kept low. Accordingly, the radiation detector is improved by a sufficient countermeasure against static electricity while input capacitance of the preamplifier is kept low. 1. A radiation detector comprising:a radiation detecting element for detecting radiation and outputting a signal;an amplifier, into which the signal from the radiation detecting element is inputted;a plurality of connecting wires, which are respectively connected with the radiation detecting element or the amplifier and are to be respectively connected with an external power supply or ground; anda circuit element, which is connected between at least one of the plurality of connecting wires and another connecting wire and has capacitance.2. The radiation detector according to claim 1 ,wherein the circuit element is connected between each of one or a plurality of connecting wires which are connected with the radiation detecting element and one connecting wire which is connected with the amplifier and which is to be connected with ground.3. The radiation detector according to claim 2 ,wherein the amplifier is connected with a plurality of connecting wires, andthe circuit element is connected between the one connecting wire and another connecting wire which is connected with ...

Display device and manufacturing method thereof

A display device includes: a first substrate; a photo transistor on the first substrate; and a switching transistor connected to the photo transistor. The photo transistor includes a light blocking film on the first substrate, a first gate electrode on the light blocking film and in contact with the light blocking film, a first semiconductor layer on the first gate electrode and overlapping the light blocking film, and a first source electrode and a first drain electrode on the first semiconductor layer. The switching transistor includes a second gate electrode on the first substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and a second source electrode and a second drain electrode on the second semiconductor layer. The first semiconductor layer and the second semiconductor layer are at a same layer of the display device, and each includes crystalline silicon germanium.

Unit pixel of image sensor and photo detector thereof

A unit pixel of an image sensor and a photo detector are disclosed. The photo detector of the present invention configured to absorb light can include: a light-absorbing part configured to absorb light by being formed in a floated structure; an oxide film being in contact with one surface of the light-absorbing part; a source being in contact with one side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; a drain facing the source so as to be in contact with the other side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; and a channel interposed between the source and the drain and configured to form flow of an electric current between the source and the drain.

SOLID STATE IMAGING DEVICE AND CAMERA SYSTEM

An MOS type solid state imaging device in which unit pixels each having a photodiode , a transfer transistor for transferring the signal of the photodiode to a floating node N, an amplifier transistor for outputting the signal of the floating node N to a vertical signal line , and a reset transistor for resetting the floating node N are arrayed in a matrix and in which a gate voltage of the reset transistor is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example −1V). 1. A solid state imaging device comprising:a plurality of unit pixels being formed in an imaging area, each unit pixel having a photoelectric converter for generating a charge in accordance with an amount of incident light and a reset transistor for resetting a floating node; anda plurality of potentials being supplied to a drain region of the reset transistor when bringing the reset transistor from an ON state to an OFF state.2. A solid state imaging device according to claim 1 , wherein each unit pixel has a transfer transistor for transferring the charge from the photoelectric converter to the floating node.3. A solid state imaging device according to claim 1 , wherein the plurality of potentials have at least three or more types of potentials.4. A solid state imaging device according to claim 1 , wherein each unit pixel has an amplifier transistor for outputting a signal of the floating node to a signal line.5. A solid state imaging device according to claim 4 , wherein the floating node connects to the gate of the amplifier transistor.6. A solid state imaging device according to claim 3 , wherein at both timings of sampling and holding a precharge phase and a data phase claim 3 , a gate potential of the reset transistor is set to the ground potential.7. A solid state imaging device according to claim 1 , wherein the plurality of potentials have at least the negative potential.8. A solid state imaging ...

Cmos image sensor

A CMOS image sensor comprising: an array of pixels for converting incident light to electrical output signals; interface circuitry configured to connect to the array and configured to: determine whether, and when, the output signal generated by each pixel meets one or more readout thresholds; and read out the output signals from the pixels that have met the one or more readout thresholds.

Solid-state imaging device and imaging apparatus

The invention is directed to a solid-state imaging device in which pixels each including a photoelectric conversion portion formed above a semiconductor substrate and an MOS type signal reading circuit formed at the semiconductor substrate and provided for reading out a signal corresponding to electric charges generated in the photoelectric conversion portion are disposed in an array form, wherein: the photoelectric conversion portion includes a pixel electrode, a counter electrode and a photoelectric conversion layer as defined herein; a bias voltage is applied to the counter electrode as defined herein; the signal reading circuit includes a charge storage portion, an output transistor and a reset transistor as defined herein; the charge storage portion includes a first charge storage region, a second charge storage region and a separation/connection region as defined herein; and the output transistor outputs a signal corresponding to the potential of the second charge storage region.

X-RAY DETECTOR

An X-ray detector including: a substrate that is divided into a light detection area and a non-detection area and includes a plurality of pixels; a photodiode disposed on the light detection area; a thin film transistor that is disposed on the non-detection area and is electrically connected to a lower portion of the photodiode; a plurality of wires that are electrically connected to the thin film transistor and are positioned on the non-detection area; at least one insulating layer disposed so as to cover at least the thin film transistor and the plurality of wires; a scintillator layer disposed on the at least one insulating layer over an entire surface of the substrate; and a shielding part disposed between the at least one insulating layer and the scintillator layer to shield the non-detection area. 1. An X-ray detector comprising:a substrate divided into a light detection area and a non-detection area and comprising a plurality of pixels;a photodiode on the light detection area;a thin film transistor on the non-detection area and electrically connected to a lower portion of the photodiode;a plurality of wires electrically connected to the thin film transistor and positioned on the non-detection area;at least one insulating layer disposed so as to cover at least the thin film transistor and the plurality of wires;a scintillator layer disposed on the at least one insulating layer over an entire surface of the substrate; anda shielding part disposed between the at least one insulating layer and the scintillator layer to shield the non-detection area.2. The X-ray detector of claim 1 , further comprising an adhesive layer between the shielding part and the scintillator layer.3. The X-ray detector of claim 2 , further comprising a passivation layer between the adhesive layer and the scintillator layer.4. The X-ray detector of claim 1 , further comprising a scintillator seed layer between the shielding part and the scintillator layer.5. The X-ray detector of claim 1 , ...

RADIATION IMAGING CONTROL APPARATUS, RADIATION IMAGING SYSTEM AND RADIATION IMAGING APPARATUS, AND METHOD FOR CONTROLLING THE SAME

A radiation imaging control apparatus, which is communicable with a radiation imaging apparatus including a radiation sensor and capable of acquiring an X-ray moving image, includes a first communication unit configured to communicate with the radiation imaging apparatus via Ethernet communication, a second communication unit configured to communicate with the radiation imaging apparatus via at least a pair of bidirectional serial optical communication lines, a first control unit configured to cause the first communication unit to transmit a first signal for setting at least one parameter to the radiation imaging apparatus, a second control unit configured to cause the second communication unit to output data of the X-ray moving image received from the radiation imaging apparatus to an image processing unit, and transmit a second signal for some settings to the radiation imaging apparatus. 1. A radiation imaging control apparatus communicable with a radiation imaging apparatus including a radiation sensor and capable of acquiring an X-ray moving image , the radiation imaging control apparatus comprising:a first communication unit configured to communicate with the radiation imaging apparatus via Ethernet communication;a second communication unit configured to communicate with the radiation imaging apparatus via at least a pair of bidirectional serial optical communication lines;a first control unit configured to cause the first communication unit to transmit a first signal for setting at least one parameter among a pixel sensitivity setting, a setting of a number of times of non-destructive reading, an analog binning setting, a digital binning setting, an accumulation time setting, and a reading area size setting to the radiation imaging apparatus;a second control unit configured to cause the second communication unit to output data of the X-ray moving image received from the radiation imaging apparatus to an image processing unit, and transmit a second signal for ...

IN-LINE GERMANIUM AVALANCHE PHOTODETECTOR

A method for manufacturing a photodetector including growing a quantity of germanium within an optical pathway of a waveguide. The detection of a current caused by an interaction between the optical signal and the germanium is used to indicate the presence of an optical signal passing through the waveguide. 1. A photodetector comprising:a waveguide having an optical pathway; anda germanium region of the photodetector located in the optical pathway wherein an optical signal is detected upon interacting with the germanium region of the photodetector and the optical signal passes through the waveguide.2. The photodetector of wherein the optical signal passes through the waveguide by entering a first end of the waveguide and exiting through a second end of the waveguide.3. The photodetector of further comprising at least two implant regions adjacent to the germanium region of the photodetector.4. The photodetector of further comprising at least one interface between the germanium photodetector and the waveguide wherein the interface gradually transitions to reduce a quantity of unwanted optical signal reflections.5. The photodetector of wherein the interface is a location where the index of refraction changes between the waveguide having a first index of refraction value and the germanium region having a second index of refraction value.6. The photodetector of wherein the germanium region has width that is designed to achieve a desired electric field strength when a known voltage is applied across that germanium region.7. A telecommunications system comprising:an integrated circuit having a waveguide wherein the waveguide has an optical pathway for transmitting a quantity of optical signals; anda germanium photodetector located in the optical pathway wherein the germanium photodetector detects the presence of at least one optical signal without terminating the optical signal.8. A method for detecting an optical signal in an integrated circuit comprising:transmitting at ...

CMOS SENSOR WITH LOW PARTITION NOISE AND LOW DISTURBANCE BETWEEN ADJACENT ROW CONTROL SIGNALS IN A PIXEL ARRAY

A CMOS image sensor includes a pixel array including a plurality of unit pixels with individual rows of unit pixels being coupled to respective row control signal lines, and a buffer including plural row control signal drivers. Each driver is coupled to a respective one of the row control signal lines and is configured to provide a row control signal pulse to a respective row control signal line in response to an input pulse when the row control signal line is in an active state and to bias the row control signal line at a ground voltage when the respective row control signal line is in an inactive state. Each driver has a first drive capability when the row control signal line is in the active state and a second drive capability greater than the first drive capability when the row control signal line is in an inactive state. 1. A CMOS image sensor , comprising:a pixel array comprising a plurality of unit pixels arranged in a plurality of rows and columns, individual rows of unit pixels being coupled to respective row control signal lines; anda buffer comprising a plurality of row control signal drivers, each row control signal driver being coupled to a respective one of the row control signal lines, each row control signal driver configured to provide a row control signal pulse to a respective row control signal line in response to an input pulse when the row control signal line is in an active state and to bias said row control signal line at a ground voltage when the respective row control signal line is in an inactive state,wherein each row control signal driver has a first drive capability when the row control signal line is in the active state and a second drive capability greater than the first drive capability when the row control signal line is in an inactive state.2. The CMOS image sensor of claim 1 , wherein each row control signal driver comprises an inverter having an input for receiving the input pulse and an output coupled to its respective row ...

PIXELS, IMAGERS AND RELATED FABRICATION METHODS

Pixels, imagers and related fabrication methods are described. The described methods result in cross-talk reduction in imagers and related devices by generating depletion regions. The devices can also be used with electronic circuits for imaging applications. 137-. (canceled)38. A pixel comprising:a first semiconductor layer of a first conductivity type;a second semiconductor layer of the first conductivity type, formed on the first semiconductor layer;a third semiconductor layer of a second conductivity type that is opposite to the first conductivity type, formed on the second semiconductor layer;a blocking region of the first conductivity type formed in the third semiconductor layer having a first depth from a pixel front side; anda charge collection region of the second conductivity type formed within the third semiconductor layer and the blocking region and extending vertically to a second depth from the pixel front side, wherein the first depth is deeper than the second depth, the charge collection region comprising a first charge collection portion and a second charge collection portion, andwherein the blocking region extends laterally to one direction up to a boundary between the first charge collection portion and the second charge collection portion.39. The pixel of claim 38 , further comprising:a first shallow trench isolation (STI) region formed under the pixel front side and beside a pixel first lateral side; anda second STI region formed under the pixel front side and beside a pixel second lateral side.40. A pixel comprising:a first semiconductor layer of a first conductivity type;a second semiconductor layer of the first conductivity type, formed on the first semiconductor layer;a third semiconductor layer of a second conductivity type that is opposite to the first conductivity type, formed on the second semiconductor layer;a blocking region of the first conductivity type formed in the third semiconductor layer having a first depth from a pixel front ...