Halbleiterbauelement mit einem Aggregat von Mikro-Nadeln aus Halbleitermaterial

Herstellungsverfahren einer optischen Halbleitervorrichtung

An optical device

Metal-assisted chemical etch to produce porous group iii-v materials

Anordnung zur Erzeugung elektromagnetischer Strahlung im infraroten und sichtbaren Spektralbereich

DISPLAY DEVICE USING AN OXIDE DIODE WITH A NANO ROD STRUCTURE

PURPOSE: A display device using an oxide diode is provide to improve a life and light emitting efficiency by forming a plurality of nano rod diodes on a plug metal layer. CONSTITUTION: A display device includes a substrate, a thin film transistor layer(20), and a light emitting layer(30). The thin film transistor layer is formed on the substrate. The light emitting layer includes a plug metal layer(31), a plurality of nano rod diodes(34), and a transparent electrode(35). The plug metal layer is formed on the thin film transistor layer. The plurality of nano rod diodes are vertically formed on the plug metal layer. The transparent electrode is formed on the plurality of nano rod diodes. Each nano rod diode includes a lower layer part, an upper layer part, and a non-doped region. COPYRIGHT KIPO 2010 ...

Optoelectronic device with light-emitting diodes

The invention relates to a method of manufacturing an optoelectronic device (10), comprising the successive steps of: (a) providing a substrate at least partially made of a semiconductor material and having first and second opposite faces; (b) forming light-emitting diodes (16) on the substrate, each light-emitting diode comprising a semiconductor microwire or nanowire (46) covered by a shell; (c) forming an encapsulation layer (50) surrounding the light-emitting diodes; (d) forming conductive pads (18) on the encapsulation layer, on the side of the encapsulation layer opposite to the substrate, in contact with the light-emitting diodes; and (e) forming through openings (26) in the substrate from the side of the second face, said openings being opposite at least part of the light-emitting diodes and delimiting walls (28) in the substrate.

OPTOELECTRONIC DEVICE HAVING SEMI-CONDUCTIVE MICROWIRES OR NANOWIRES AND METHOD FOR PRODUCING SAME

The invention concerns an optoelectrical device (10) comprising microwires or nanowires (24) on a support (14, 20 and 22), each microwire or nanowire comprising at least one portion (26) predominantly comprising a III-V compound in contact with the substrate, in which the III-V compound is made from a first element from group V and a second element from group III, in which one face (23) of the substrate comprises first areas (20) made from a first material promoting the growth of the III-V compound according to the polarity of the first element distributed in a second area (22) made from a second material promoting the growth of the compound according to the polarity of the second element, the microwires or nanowires (24) being positioned on the first areas, in which the edge of said portion (26) is covered with a layer (36) made from a dielectric material from the substrate along a part of the total height of said portion.

OPTOELECTRONIC DEVICE WITH LIGHT-EMITTING DIODES

The invention relates to an optoelectronic circuit (10) comprising a substrate (12) and display pixels (Pix), each display pixel comprising a first light-emitting diode (18) adapted to emit a first radiation and a second light-emitting diode (40, 42) adapted to emit a second radiation, the first light-emitting diode having a planar structure and resting on the substrate and the second light-emitting diode having a tridimensional structure and resting on the first light-emitting diode or crossing at least partially through the first light-emitting diode.

OPTOELECTRONIC DEVICE COMPRISING THREE-DIMENSIONAL SEMICONDUCTOR ELEMENTS AND METHOD FOR THE PRODUCTION THEREOF

The invention relates to an optoelectronic device (10) comprising a carrier (14) comprising a face (18) comprising flat butt-jointed facets inclined in relation to each other; seeds (26), mainly consisting of a first compound selected from the group comprising the compounds III-V, the compounds II-VI and the compounds IV, in contact with the carrier in the region of at least some of the joints (22) between the facets; and conical or frustoconical, wire-like three-dimensional semiconductor elements (28) of a nanometric or micrometric size, mainly consisting of said first compound, on the seeds.

SEMICONDUCTOR HETEROSTRUCTURE

A semiconductor heterostructure device for use as a component in an optoelectronic component, the device has a substrate, a nanocolumn extending from the substrate, a self-centred passivation layer on top of the nanocolumn, an active region which comprises a quantum well (QW) stack on a vertical side of the nanocolumn and wherein the passivation layer extends horizontally outwards from the nanocolumn to overhang the nanocolumn and the QW stack. The device provides for efficient NC heterostructure based light emitting diodes (LEDs) and other optoelectronic devices with an active region located purely on non-polar facets of the NCs. It also eliminates parasitic current paths allowing core-shell nanorod-based LEDs with emission from the desired facets only.

LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME

The invention concerns a light-emitting diode (LED) comprising an active region and having a three-dimensional (3D) structure. The 3D LED comprises: - a first layer made from GaN containing a first proportion of Aluminium and a first proportion of Indium, and - a second layer made from GaN interposed between and in contact with the first layer and the active region, containing a second proportion of Aluminium and a second proportion of Indium, the second proportion of Indium being strictly higher than the first proportion of Indium so as to promote the formation of misfit dislocations at an interface between the first and second layers. Advantageously, the active region and the first and second layers extend in semi-polar crystallographic planes. The invention further relates to a method for manufacturing such a 3D LED.

LUMINESCENT COMPOSITION, QUANTUM DOTS, AND PREPARATION METHOD THEREFOR

Provided are: a luminescent composition comprising nanostructures; and, in particular, highly luminescent quantum dots. The nanostructures have a high luminescent quantum yield, emit light at a specific wavelength in a specific implementation embodiment, and have a narrow size distribution. In addition, provided is a method for producing the highly luminescent nanostructures, wherein the method includes a technique for synthesizing a shell alloy of a nanostructure core using indium.

METHOD FOR PRODUCING AN ORGANISED NETWORK OF SEMICONDUCTOR NANOWIRES MADE FROM ZNO

This method for producing an organised network of nanowires from ZnO comprises the following steps: obtaining a layer (1) of ZnO with Zn polarity on a substrate (5), by epitaxial growth at a low temperature, advantageously between 400°C and 650°C, and advantageously in the presence of dioxygen (O2); forming a mask (2) provided with openings (3) on this layer for the subsequent growth of the nanowires; epitaxial growth of ZnO nanowires (4).

BAND GAP ENGINEERING OF AMORPHOUS Al-Ga-N ALLOYS

L'invention concerne une structure semi-conductrice et un schéma permettant de former une couche de matière amorphe sur un substrat semi-conducteur. Selon un mode de réalisation de la présente invention, une structure semi-conductrice comprend un alliage amorphe formé sur une partie au moins d'un substrat semi-conducteur. Cet alliage amorphe comprend un nitrure d'aluminium amorphe (AlN) ainsi qu'un nitrure de gallium amorphe (GaN). Ledit alliage amorphe peut être représenté par la formule Al¿xGa¿1-xN, dans laquelle x est supérieur à zéro et inférieur à un. Il peut également comprendre un nitrure d'indium. On maintient des proportions relatives d'aluminium et de gallium dans cet alliage aluminium-gallium amorphe de façon à former la bande interdite dudit alliage amorphe.

Method of manufacturing display device

A method of manufacturing a display device, the method including providing a substrate, forming a first electrode, a second electrode spaced from the first electrode and in a same plane as the first electrode, a first alignment line connected to the first electrode, and a second alignment line connected to the second electrode on the substrate, self-aligning the plurality of light emitting elements by providing a solution containing a plurality of light emitting elements on the substrate, removing the first alignment line and the second alignment line from the substrate on which the plurality of light emitting elements are self-aligned, forming a first contact electrode electrically connecting one end of each light emitting element to the first electrode, and forming a second contact electrode electrically connecting an other end of each light emitting element to the second electrode.

Optoelectronic material, device using the same, and method for manufacturing optoelectronic material

This invention relates an optoelectronic material comprising a uniform medium with a controllable electric characteristic; and semiconductor ultrafine particles dispersed in the medium and having a mean particle size of 100 nm or less, and an application device using the same. This invention also relates to a method of manufacturing an optoelectronic material by irradiating a laser beam onto a first target of a semiconductor material, placed in a reaction chamber in low pressure rare gas ambient, and a second target of a medium material with a controllable electric characteristic, placed in the reaction chamber, condensing/growing a semiconductor material ablated from the first target to be collected as ultrafine particles having a mean particle size of 100 nm or smaller on a substrate placed in the reaction chamber, and condensing/growing a medium material ablated from the second target to be collected on the substrate placed in the reaction chamber, thus forming an ultrafine-particles ...

Process for manufacturing semiconductor, apparatus for manufacturing semiconductor, and amorphous material

A process for manufacturing a semiconductor, including generating a first plasma of a V group element from a V group element source; generating a second plasma of an auxiliary material for activating a metal organic compound containing a III group element separately from and at the same time as the first plasma; adding the vaporized metal organic compound and the plasma of the auxiliary material to the plasma of the V group element; and forming, on a substrate, a film of a semiconductor compound containing the III group element and the V group element. A semiconductor and a semiconductor device having high quality and high functions can be manufactured in a short time at high yield. An amorphous material includes at least hydrogen, a III Group element, preferably gallium, and nitrogen. In the infrared absorption spectrum measured of the amorphous material, the ratio of the absorbance IN-H, at the absorption peak indicating the bond (N-H) between nitrogen and hydrogen to that, IC-H, at the ...

Method for manufacturing light emitting diode chip with electrodes having smooth surfaces

A method for manufacturing a light emitting diode chip includes the following steps: providing an epitaxial structure having an epitaxial layer; forming a first electrode and a second electrode on the epitaxial layer; coating an inert layer on the epitaxial structure, the first electrode and the second electrode continuously; annealing the first electrode and the second electrode; and removing the inert layer coated on the first electrode and the second electrode to expose the first electrode and the second electrode.

Nanorod light emitting device and method of manufacturing the same

A nanorod light emitting device includes at least one nitride semiconductor layer, a mask layer, multiple light emitting nanorods, nanoclusters, a filling layer disposed on the nanoclusters, a first electrode and connection parts. The mask layer is disposed on the nitride semiconductor layer and has through holes. The light emitting nanorods are disposed in and extend vertically from the through holes. The nanoclusters are spaced apart from each other. Each of the nanoclusters has a conductor and covers a group of light emitting nanorods, among the multiple light emitting nanorods, with the conductor. The first electrode is disposed on the filling layer and has a grid pattern. The connection parts connect the conductor and the first electrode.

Optoelectronic device comprising three-dimensional diodes

An optoelectronic device including a support having a rear surface and a front surface opposite each other, a plurality of nucleation conductive strips forming first polarization electrodes, an intermediate insulating layer covering the nucleation conductive strips, a plurality of diodes, each of which having a first, three-dimensional doped region and a second doped region, and a plurality of top conductive strips forming second polarization electrodes and resting on the intermediate insulating layer, each top conductive strip being disposed in such a way as to be in contact with the second doped regions of a set of diodes of which the first doped regions are in contact with different nucleation conductive strips.

Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure

A method of forming a semiconductor structure includes providing a substrate comprising a first material portion and a single crystal silicon layer on the first material portion. The substrate further comprises a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface. A buffer layer is deposited in one or more of the plurality of grooves. A semiconductor material is epitaxially grown over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase.

METHOD OF FABRICATING NON-POLAR AND SEMI-POLAR DEVICES USING EPITAXIAL LATERAL OVERGROWTH

A method of fabricating a semiconductor device, comprising: forming a growth restrict mask on or above a III-nitride substrate, and growing one or more island-like III-nitride semiconductor layers on the III-nitride substrate using the growth restrict mask The III-nitride substrate has an in-plane distribution of off-angle orientations with more than 0.1 degree; and the off-angle orientations of an m-plane oriented crystalline surface plane range from about +28 degrees to about −47 degrees towards a c-plane. The island-like III-nitride semiconductor layers have at least one long side and short side, wherein the long side is perpendicular to an a-axis of the island-like III-nitride semiconductor layers. The island-like III-nitride semiconductor layers do not coalesce with neighboring island-like III-nitride semiconductor layers.

Micro-LED displays

A micro-light emitting diode (LED) display panel and a method of forming the display panel, the micro-LED display panel having a monolithically grown micro-structure including a first color micro-LED that is a first color nanowire LED, and a second color micro-LED that is a second color nanowire LED.

µ-LED, µ-LED DEVICE, DISPLAY AND METHOD FOR THE SAME

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

OPTOELECTRIC DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR LOCAL REMOVAL OF SEMICONDUCTOR WIRES

ОПТОЭЛЕКТРОННЫЙ МАТЕРИАЛ, УСТРОЙСТВО ДЛЯ ЕГО ИСПОЛЬЗОВАНИЯ И СПОСОБ ИЗГОТОВЛЕНИЯ ОПТОЭЛЕКТРОННОГО МАТЕРИАЛА

Сущность изобретения: оптоэлектронный материал содержит однородную среду с управляемой электрической характеристикой и полупроводниковые сверхмелкозернистые частицы, диспергированные в упомянутой среде. Сверхмелкозернистые частицы имеют средний размер частиц 100 нм или менее, а упомянутая среда имеет специфическое сопротивление приблизительно такое же или больше, чем у полупроводниковых сверхмелкозернистых частиц. Технический результат - разработка оптоэлектронного материала, который содержит материал, запасы которого неограничены и который не загрязняет окружающую среду, и обладает свойствами, такими как спонтанное излучение света, быстрое срабатывание, возможность миниатюризации пикселя, низкие потери мощности, высокая стойкость к воздействиям окружающей среды. 15 с. и 21 з.п.ф-лы, 27 ил., 2 табл.

Diode

Diode dadurch gekennzeichnet, dass die Diode auf der Kohlenstoffmodifikation Graphen basiert.

Verfahren zur Herstellung eines Aggregats von Mikro-Nadeln aus Halbleitermaterial

Halbleiterbauelement mit einem Aggregat von Mikro-Nadeln aus Halbleitermaterial

Optoelektronischer Halbleiterchip

Amorphous alingan light emitting diode

An amorphous AlInGaN light emitting diode comprises i-type, p-type and/or n-type impurity amorphous compound semiconductor layer on a GaN substrate or a sapphire substrate. The amorphous AlInGaN light emitting diode has low manufacture cost and high yield.

Optical elements

An optical element 1 comprises a body 2 of radiation converting monocrystalline material, (e.g. of a luminescent or scintillator material), and an extraction structure 4, 6 applied to at least one output and/or input surface of the body of radiation converting monocrystalline material; wherein the extraction structure is constructed and configured such that radiation at an output 19 of the body of radiation converting monocrystalline material is directionally modified, as compared with radiation at the output of the body of radiation converting monocrystalline material in the absence of said extraction structure, by interaction of radiation entering and/or propagating within and/or exiting the body of radiation converting monocrystalline material with the said extraction structure, (e.g. by modifying the energy or intensity of the radiation at the output of the body via interactions of radiation entering and/or propagating within and/or exiting the body with the surface, and/or modifying ...

III-V COMPOUND SEMICONDUCTOR DEVICE, DRUCKERUND INDICATOR USING THE SAME, AND PROCEDURE FOR THE PRODUCTION OF THIS DEVICE

PROCEDURE FOR THE PRODUCTION OF AN ELEMENT WITH POROSIDIERTEM MATERIAL

PHOTO-ELECTRONIC MATERIAL, THIS USING DEVICES AND MANUFACTURING PROCESSES

An optoelectronic device comprising nanostructures of hexagonal type crystals

An optoelectronic device comprising: - a first conductive layer (22), - a second conductive layer (24), - an active layer (26) between the first conductive layer and the second conductive layer, wherein the active layer comprises a submicrometer size structure of hexagonal type crystals of an element or alloy of elements selected from the carbon group.

LIGHT-EMITTING DIODES

LIGHT-EMITTING DIODES

POROUS SEMICONDUCTOR AND PROCESS FOR PRODUCING THE SAME

A filter capable of performing collection of organic materials, bacteria, viruses and other hazardous materials and sterilization/decomposition of collected matter at low cost with extremely high efficiency; and a process for producing the same. In particular, a porous semiconductor constituted of a semiconductor material capable of light emission is formed inside or on the surface of a porous ceramic or metal as a substrate. Electrodes are fitted thereto to thereby obtain a filter. Fluid is filtered while applying voltage so as to emit ultraviolet radiation. Thus, sterilization/decomposition of hazardous materials, etc. can be performed simultaneously with the filtration thereof.

NANOPROVOLOKA OR NANOPIRAMIDKI, GROWN ON GRAPHITE SUBSTRATE

Includes a light emitting diode and a control circuit of the optoelectronic device

Optoelectronic device comprising nanowires with a core/shell structure

The invention relates to an optoelectronic device comprising light-emitting means taking the form of nanowires (1, 7) having a core/shell structure and produced on a substrate (11), said nanowires comprising an active zone (12, 72) comprising at least two types of quantum wells associated with different emission wavelengths and arranged in at least two different regions (120, 121; 720, 721, 722) of said active zone, a first region (120, 720) of the active zone (12, 72) of the nanowires (1, 7) being a peripheral and substantially vertical part at least partially encircling the core (10, 70) of the nanowires and comprising radial quantum wells, and a second region (121, 721) of this active zone being an upper and substantially horizontal part located on the end of the core of the nanowires, with axial quantum wells, the device furthermore comprising a first electrical contact zone (15) on the substrate and a second electrical contact zone (16, 51; 17, 81) on the emitting means, the second ...

Group III nitride nanorod light emitting device and method of manufacturing thereof

LIGHT EMITTING DIODE USING SILICON NITRIDES AND A MANUFACTURING METHOD THEREOF, CAPABLE OF CONTROLLING THE SIZE OF THE SILICON NANO STRUCTURE

PURPOSE: A light emitting diode using silicon nitrides and a manufacturing method thereof are provided to offer more stable process environment by fixing the process condition with the flow ratio of reaction gas and deposition pressure. CONSTITUTION: The silicon nitride base body(20) is grown up on a substrate(10) by using the silicon source gas and the nitrogen source gas of the fixed flow ratio. The size of the silicon nano structure formed within the silicon nitride base body is controlled by varying the plasma power. The silicon source gas is the silane gas. COPYRIGHT KIPO 2011 ...

3차원 반도체 소자를 구비한 광전자 장치

... 본 발명은 III-V족 화합물, II-VI족 화합물, 및 IV족 화합물로 구성된 그룹으로부터 선택되는 제 1 화합물로 주로 제조된 3차원 반도체 소자(20)를 포함하는 광전자 장치(30)에 관한 것이다. 각각의 반도체 소자는, 선택적으로 상기 반도체 소자를 부분적으로 피복하는 절연 부분으로, 서로 경사진 연속 패싯들을 포함하는 하나 이상의 제 1 표면(34)을 형성한다. 이 광전자 장치는 패싯들 사이의 적어도 일부의 이음부에 양자 도트(60)를 포함한다. 이 양자 도트는 제 1 화합물과 추가 원소의 혼합물로 주로 제조되고, 제 1 파장의 제 1 전자기 복사를 방출 또는 수신하기에 적합하다.

OPTOELECTRONIC DEVICE WITH THREE-DIMENSIONAL SEMICONDUCTOR ELEMENTS

The invention relates to an optoelectronic device (30) including three-dimensional semiconductor elements (20) predominantly made of a first compound selected from among the group consisting of Compounds III-V, Compounds II-VI, and Compounds IV. Each semiconductor element defines, optionally with insulating portions partially covering said semiconductor element, at least one first surface (34) including contiguous facets angled relative to each other. The optoelectronic device includes quantum dots (60) at at least some of the seams between the facets. The quantum dots are predominantly made of a mixture of the first compound and an additional element and are suitable for emitting or receiving a first electromagnetic radiation at a first wavelength.

OPTOELECTRONIC DEVICE, ASSOCIATED DISPLAY SCREEN AND METHOD FOR PRODUCING SUCH AN OPTOELECTRONIC DEVICE

The present invention relates to an optoelectronic device (15) comprising a substrate (30) and at least two-sub-pixels (20), each sub-pixel (20) being suitable for emitting a first respective radiation, the substrate (30), each sub-pixel (20) comprising: - at least one fin (35) made of a first semiconductor material, the fin (35) along a normal direction perpendicular to the substrate, each fin (35) having first lateral side (75); - a covering layer (40) comprising one or more radiation-emitting layers (100), the covering layer (40) extending over the first lateral side (75) of each fin (35), the sub-pixels (20) defining a void that is located between the two sub-pixels (20), and a blocking structure (25) being inserted into the void between the two sub-pixels (20), the blocking structure (25) being suitable for preventing the first radiation emitted by one sub-pixel (20) from reaching the other sub-pixel (20) through the blocking structure.

NANOSTRUCTURE BASED LIGHT EMITTING DEVICES AND ASSOCIATED METHODS

A light emitting device (10) can incorporate a plurality of nanostructures in a light emission layer (12). The device (10) can include a donor electrode (18) and an acceptor electrode (20) which are light transmissive. At least one of the donor electrode (18) and acceptor electrode (20) can include an inorganic material. The light emission layer (12) can be disposed between each of the donor material (18) and the acceptor material (20).

NANOSTRUCTURED LED ARRAY WITH COLLIMATING REFLECTORS

The present invention relates to nanostructured light emitting diodes, LEDs. The nanostructured LED device according to the invention comprises an array of a plurality of individual nanostructured LEDs. Each of the nanostructured LEDs has an active region wherein light is produced. The nanostructured device further comprise a plurality of reflectors, each associated to one individual nanostructured LED (or a group of nanostructured LEDs. The individual reflectors has a concave surface facing the active region of the respective individual nanostructured LED or active regions of group of nanostructured LEDs.

METHOD FOR PRODUCING TEMPERATURE-STABLE LARGE-SIZE EMITTING LEDS AND LEDS

The invention relates to a method for producing temperature-stable large-size emitting LEDs and LEDs produced by said method. The method is characterised in that a large-area emitting light emitter is provided in the form of semiconductor nanocrystals which furthermore is temperature-stable and has a narrow band emission. A colloidal solution of emitting nanocrystals and a matrix of either inorganic gels or at least one polymer are alternately applied to the substrate with the first electrode by spraying, as a result of the electrostatic interactions between substrate, nanoparticles and inorganic gels or polymers, the nanoparticles or the polymers of the matrix are adsorbed and the impurities run down with the solvent. The layer of alternately sprayed nanocrystals and matrix are heated to give a gel cross-linking the metal oxide nanoparticles, wherein thee size of thee semiconductor nanocrystals which determine the emission wavelength are determined by the temperature and duration of the ...

Method of manufacturing aggregate of semiconductor micro-needles

On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

SELF-EMISSION TYPE DISPLAY

A self-emission type display including a carrier substrate, a light-emitting element, a first electrode, and a second electrode is provided. The light-emitting element is disposed on the carrier substrate and has a first pad and a second pad. The first electrode has a plurality of first stripe portions electrically connected to a first electric potential. The first pad of the light-emitting element is electrically connected to the carrier substrate through at least one first strip portion. The second electrode has a plurality of second stripe portions electrically connected to a second electric potential. The first electrode and the second electrode are separated from each other. The second pad of the light-emitting element is electrically connected to the carrier substrate through at least one second strip portion. The first electric potential is different from the second electric potential.

SEMICONDUCTOR LIGHT EMITTING DEVICES INCLUDING IN-PLANE LIGHT EMITTING LAYERS

A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11 20} or {10 10} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.

QUANTUM DOT LIGHT EMITTING DEVICE

An inorganic light emitting device including a transparent substrate; a first electrode; a second electrode opposed to the first electrode; a polycrystalline inorganic light emitting layer including core/shell quantum dots within an inorganic semiconductor matrix and, wherein the first electrode is transparent and formed on the transparent substrate, the polycrystalline inorganic light emitting layer is formed over the first electrode, and the second electrode is formed over the light emitting layer.

Heavily doped semiconductor nanoparticles

Herein, provided are heavily doped colloidal semiconductor nanocrystals and a process for introducing an impurity to semiconductor nanoparticles, providing control of band gap, Fermi energy and presence of charge carriers. The method is demonstrated using InAs colloidal nanocrystals, which are initially undoped, and are metal-doped (Cu, Ag, Au) by adding a metal salt solution.

III-V heterojunction light emitting diode

A method for forming a light emitting device includes forming a monocrystalline III-V emissive layer on a monocrystalline substrate and forming a first doped layer on the emissive layer. A first contact is deposited on the first doped layer. The monocrystalline substrate is removed from the emissive layer by a mechanical process. A second doped layer is formed on the emissive layer on a side from which the substrate has been removed. The second doped layer has a dopant conductivity opposite that of the first doped layer. A second contact is deposited on the second doped layer.

Light-emitting device and optical integrated device

In fabricating a monochromic and highly coherent light source, no single crystalline bulk semiconductor is used, but two different kinds of transparent substances are alternately stacked over each other to constitute a periodic structure in ½ of the intended wavelength. At least one of the two kinds of transparent substances is controllable in electric conductivity, and the structure is such that inside a medium consisting of this kind of transparent substance light-emitting semiconductor particulates are embedded. Accordingly, a light-emitting device has this structure, which makes possible control of the center wavelength of light emission, the width of wavelength distribution and coherence by adjusting the geometrical parameters of the device without having to alter the kind of material use.

Process for preparing a nanocrystalline material

A process for preparing a nanocrystalline material comprising at least a first ion and at least a second ion different from the first ion, and wherein at least the first ion is a metal ion, is described. The process comprises contacting a metal complex comprising the first ion and the second ion with a dispersing medium suitable to form the nanocrystalline material and wherein the dispersing medium is at a temperature to allow formation by pyrolysis of the nanocrystalline material when contacted with the metal complex.

Nitride semiconductor device with reduced polarization fields

A method for fabricating a light-emitting semiconductor device including a III-Nitride quantum well layer includes selecting a facet orientation of the quantum well layer to control a field strength of a piezoelectric field and/or a field strength of a spontaneous electric field in the quantum well layer, and growing the quantum well layer with the selected facet orientation. The facet orientation may be selected to reduce the magnitude of a piezoelectric field and/or the magnitude of a spontaneous electric field, for example. The facet orientation may also be selected to control or reduce the magnitude of the combined piezoelectric and spontaneous electric field strength.

Band gap engineering of amorphous Al-Ga-N alloys

A semiconductor structure and a scheme for forming a layer of amorphous material on a semiconductor substrate are provided. In accordance with one embodiment of the present invention, a semiconductor structure is provided comprising an amorphous alloy formed over at least a portion of a semiconductor substrate. The amorphous alloy comprises amorphous aluminum nitride (AlN) and amorphous gallium nitride (GaN). The amorphous alloy may be characterized by the following formula:where x is a value greater than zero and less than one. The amorphous alloy may further comprise indium nitride. Relative proportions of aluminum and gallium in the amorphous aluminum gallium nitride alloy are controlled to engineer the band gap of the amorphous alloy.

Flat panel display device and method of manufacturing the same

A flat panel display device including a substrate including first and second regions; an active layer on the first region of the substrate including a semiconductor material; a lower electrode on the second region of the substrate including the semiconductor material; a first insulating layer on the substrate including the active layer and the lower electrode thereon; a gate electrode on the first insulating layer overlying the active layer and including a first conductive layer pattern and a second conductive layer pattern; an upper electrode on the first insulating layer overlying the lower electrode and including the first conductive layer pattern and the second conductive layer pattern; a second insulating layer on the gate electrode and the upper electrode exposing portions of the active layer and portions of the upper electrode; and a source electrode and a drain electrode connected to the exposed portions of the active layer.

Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles

A radiation-emitting device includes a nanowire that is structurally and electrically coupled to a first electrode and a second electrode. The nanowire includes a double-heterostructure semiconductor device configured to emit electromagnetic radiation when a voltage is applied between the electrodes. A device includes a nanowire having an active longitudinal segment selectively disposed at a predetermined location within a resonant cavity that is configured to resonate at least one wavelength of electromagnetic radiation emitted by the segment within a range extending from about 300 nanometers to about 2,000 nanometers. Active nanoparticles are precisely positioned in resonant cavities by growing segments of nanowires at known growth rates for selected amounts of time.

P—GaN-down micro-LED on semi-polar oriented GaN

Disclosed herein are techniques for improving performance of micro light emitting diodes. According to certain embodiments, a semi-polar-oriented light emitting diode (LED) (e.g., grown on (2021) plane or (1122) plane) includes a buried p-GaN layer that is grown before the active region and the n-GaN layer of the LED are grown, such that the polarization-induced (including strain-induced piezoelectric polarization and spontaneous polarization) electrical field and the built-in depletion field in the active region are in opposite directions during normal operations, thereby reducing or minimizing the overall internal electric field that can contribute to Quantum-Confined Stark Effect. The buried p-GaN layer is grown on an n-i-n sacrificial etch junction, which can be laterally wet-etched to separate the semi-polar-oriented LED from the underlying substrate and expose the p-GaN layer for planar or vertical (rather than horizontal or lateral) activation.

Two-dimensionally arrayed quantum device

A quantum device is constituted from a two-dimensional array of quantum dots formed from metal atom aggregates contained in a metalloprotein complex. The metalloprotein is arranged on the surface of a substrate having an insulation layer with a pitch of the size of the metalloprotein complex. The diameter of the metal atom aggregates used in the quantum device is 7 nm or smaller, and the pitch of the metalloprotein complex is preferably from 11 to 14 nm.

Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same

Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other.

MANUFACTURING METHODS OF SEMICONDUCTOR LIGHT-EMITTING DEVICES

OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME

III-nitride light-emitting diode and method of producing the same

Embodiments of the present invention provides III-nitride light-emitting diodes, which primarily include a first electrode, a n-type gallium nitride (GaN) nanorod array consisted of one or more n-type GaN nanorods ohmic contacting with the first electrode, one or more indium gallium nitride (InGaN) nanodisks disposed on each of the n-type GaN nanorods, a p-type GaN nanorod array consisted of one or more p-type GaN nanorods, where one p-type GaN nanorod is disposed on top of the one ore more InGaN nanodisks disposed on each of the n-type GaN nanorods, and a second electrode ohmic contacts with the p-type GaN nanorod array.

OPTOELECTRONIC DEVICE WITH LIGHT EMITTING DIODES ON A CONTROL CIRCUIT

OPTOELECTRONIC DEVICE COMPRISING THREE-DIMENSIONAL DIODES

OPTOELECTRONIC DEVICE COMPRISING LIGHT-EMITTING DIODES WITH IMPROVED LIGHT EXTRACTION

СПОСОБ СОЗДАНИЯ СВЕТОИЗЛУЧАЮЩЕГО ЭЛЕМЕНТА

Изобретение относится к способам изготовления светоизлучающего элемента с длиной волны из ближней инфракрасной области спектра.Диодная светоизлучающая структура формируется на монокристаллическом кремнии с ориентацией поверхности (111) или (100). Активная зона светоизлучающего элемента представляет собой наноразмерные кристаллиты (нанокристаллиты) полупроводникового дисилицида железа, упруго встроенные в монокристаллический эпитаксиальный кремний. Перед формированием активной зоны на подложку наносится слой нелегированного кремния для ее пространственного отделения от подложки (буферный слой). Нанокристаллиты образуются при эпитаксиальном заращивании предварительно сформированных на буферном слое методом молекулярно-лучевой эпитаксии наноостровков полупроводникового дисилицида железа. Применение особых режимных параметров обеспечивает высокую концентрацию нанокристаллитов в активной зоне. Цикл, включающий формирование наноостровков и их последующую агрегацию в нанокристаллиты, повторяют ...

Verfahren zur Herstellung eines Aggregats von Mikro-Nadeln aus Halbleitermaterial

PHOTOELEKTRONISCHES MATERIAL, DIESES VERWENDENDE VORRICHTUNGEN UND HERSTELLUNGSVERFAHREN

OPTICAL ARRANGEMENT

MONODISPERSE NANO-CRYSTALS WITH NUCLEAR/CBOWL AND OTHER COMPLEXES STRUCTURES AS WELL AS MANUFACTURING PROCESSES FOR IT

Preparation of graded semiconductor films by the layer-by-layer assembly of nanoparticles

NANOSCALE WIRES AND RELATED DEVICES

SILICON NANOPARTICLES EMBEDDED IN POLYMER MATRIX

AN OPTOELECTRONIC DEVICE COMPRISING NANOSTRUCTURES OF HEXAGONAL TYPE CRYSTALS

An optoelectronic device comprising: - a first conductive layer (22), - a second conductive layer (24), - an active layer (26) between the first conductive layer and the second conductive layer, wherein the active layer comprises a submicrometer size structure of hexagonal type crystals of an element or alloy of elements selected from the carbon group.

Nanostructured LED array with collimating reflectors

The present invention relates to nanostructured light emitting diodes, LEDs. The nanostructured LED device according to the invention comprises an array of a plurality of individual nanostructured LEDs. Each of the nanostructured LEDs has an active region wherein light is produced. The nanostructured device further comprise a plurality of reflectors, each associated to one individual nanostructured LED (or a group of nanostructured LEDs. The individual reflectors has a concave surface facing the active region of the respective individual nanostructured LED or active regions of group of nanostructured LEDs.

Light emitting device and manufacturing method thereof

Indirect band gap light emitting device

OPTOELECTRONIC DEVICE CONTAINING NANOFILS AND CORRESPONDING PROCESSES

LED, for displays and communications, is based on amorphous p-type, n-type and p-n-type aluminum-indium-gallium nitride semiconductor layers

Une diode électroluminescente en AlInGaN amorphe comprend une couche de semi-conducteur d'un composé amorphe dopé de type i, de type p et/ou de type n sur un substrat en GaN (100) ou sur un substrat en saphir. La diode électroluminescente en AlInGaN amorphe a un faible coût de fabrication et un haut rendement.

Nanowire light emitting device

LIGHT EMITTING DEVICE FOR INCLUDING A GRAPHENE LAYER AND A NANOCRYSTAL LAYER FORMED BETWEEN AN ACTIVE LAYER AND A SECOND CONDUCTIVE SEMICONDUCTOR LAYER

PURPOSE: A light emitting device for including a graphene layer and a nanocrystal layer is provided to improve the internal quantum efficiency of a light emitting device by exciting surface plasmon in an interface of a graphene layer and a nano crystal layer. CONSTITUTION: A first conductive semiconductor layer(20) is formed on a substrate(10). An active layer(30) is formed on the first conductive semiconductor layer. A nano crystal layer(40) is formed on the active layer. A graphene layer(50) is formed on the nano crystal layer. A second conductive semiconductor layer(60) is formed on the graphene layer. COPYRIGHT KIPO 2012 ...

Light emittng device

OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT

The invention relates to an optoelectronic semiconductor component (20) comprising a substrate (1), a plurality of active regions (10, preferably micro- or nano-rods) arranged next to one another, and a current expansion layer (4), which at least partially covers the active regions (10) and electrically connects them to one another. The active regions (10) are arranged at least partially at a distance to one another and have a main extension direction (z), a core region (11), a radiation-emitting layer (12) and a cover layer (13). The radiation-emitting layer (12) covers the core region (11) at least in directions transverse to the main extension direction (z) of the active region (10). The cover layer (13) covers the radiation-emitting layer (12) at least in directions transverse to the main extension direction (z) of the active region (10). The active regions (10) have surface regions (14) on a side facing away from the substrate (1), which are not electrically conductively connected ...

OPTOELECTRONIC ELEMENT, AND OPTOELECTRONIC COMPONENT

The invention relates to an optoelectronic element comprising a semiconductor chip (12) that emits a blue-green light (4) during operation and has at least one light passage surface (12a) through which the blue-green light (4) emitted during operation passes and comprising a conversion element (3) which comprises fluorescent particles (31), in particular fluorescent particles of only one type, and which is arranged on the light passage surface (12a) at least in some areas. The fluorescent particles (31) at least partly convert the blue-green light (4) into a red light (5), and the optoelectronic element emits a white mixed light (6) which contains non-converted components of the blue-green light (4) and components of the red light (5).

HIGH LIGHT-EXTRACTION EFFICIENCY (LEE) LIGHT-EMITTING DIODE (LED)

A light-emitting diode, comprising a substrate that has a first surface and an opposing second surface. A reflection layer is disposed on the first surface of the substrate and a light- emitting diode structure is arranged on the second surface of the substrate. The light-emitting diode structure includes a first semiconducting layer, an active layer and a second semiconducting layer disposed consecutively on the second surface. A plurality of protruding asymmetric micro-structured elements define at least a part of the second surface of the substrate such that at least a portion of a surface of each micro- structured element is disposed at an obtuse angle to the first surface of the substrate when measured from within the respective micro- structured element. The first semiconducting layer and the second semiconducting layer respectively have a first electrode and a second electrode.

SEMICONDUCTOR DISPLAY, OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING SAME

In one embodiment, the semiconductor display (10) comprises a multiplicity of semiconductor columns (2) and also first and second contact strips (3, 4). The semiconductor columns (2) each comprise a semiconductor core (21) of a first conductivity type and a semiconductor shell (23) of a second conductivity type, which is different from the first conductivity type, and also an intervening active layer (22) for generating radiation. The semiconductor columns (2) each comprise an energization shell (24) applied to the relevant semiconductor shell (23) for energization purposes. The semiconductor columns (2) are drivable individually or in small groups (29) via the first and second electrical contact strips (3, 4) electrically independently of one another.

NANOSTRUCTURE OPTOELECTRONIC DEVICE HAVING SIDEWALL ELECTRICAL CONTACT

Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have a top electrical contact that is physically and electrically connected to sidewalls of the array of nanostructures (e.g., nanocolumns). The top electrical contact may be located such that light can enter or leave the nanostructures without passing through the top electrical contact. Therefore, the top electrical contact can be opaque to light having wavelengths that are absorbed or generated by active regions in the nanostructures. The top electrical contact can be made from a material that is highly conductive, as no tradeoff needs to be made between optical transparency and electrical conductivity. The device could be a solar cell, LED, photo-detector, etc.

METHOD FOR PRODUCING A PLURALITY OF OPTOELECTRONIC SEMI-CONDUCTOR CHIPS AND OPTOELECTRONIC SEMI-CONDUCTOR CHIP

The invention relates to a method for producing a plurality of optoelectronic semi-conductor chips having buried p-sides, comprising the following steps: a) producing a wafer (1, 2, 3) having a semi-conductor layer sequence (100, 200, 300), which comprises an n-doped layer (12, 22, 32), an active layer (13, 23, 33) and a p-doped layer (14, 24, 34), wherein the active layer is disposed between the n-doped layer and the p-doped layer and the p-doped layer is exposed, b) electrically activating the acceptors in the exposed p-doped layer (14, 24, 34) by a thermal activation method, c) covering the p-doped layer (14, 24, 34), and d) dicing the wafer (1, 2 3) into a plurality of optoelectronic semi-conductor chips.

Dc-driven electroluminescence device and light emission method

An inorganic electroluminescence device has a structure including a phosphor layer sandwiched between a first electrode and a second electrode; and a semiconductor structure in which N-type semiconductors and a P-type semiconductor, made of inorganic semiconductor materials, are joined to form an NPN type structure. The phosphor is made of an inorganic substance. The first electrode is to be a cathode and is formed on an insulating glass substrate. The second electrode is to be an anode and is disposed opposite the first electrode. The semiconductor structure is disposed between the cathode that is the first electrode and the phosphor layer.

Arrays of filled nanostructures with protruding segments and methods thereof

A structure and method for at least one array of nanowires partially embedded in a matrix includes nanowires and one or more fill materials located between the nanowires. Each of the nanowires including a first segment associated with a first end, a second segment associated with a second end, and a third segment between the first segment and the second segment. The nanowires are substantially parallel to each other and are fixed in position relative to each other by the one or more fill materials. The third segment is substantially surrounded by the one or more fill materials. The first segment protrudes from the one or more fill materials.

Pixel of a multi-stacked cmos image sensor and method of manufacturing the same

Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.

Light emitting element and method for manufacturing same

Disclosed is a light emitting element, which emits light with small power consumption and high luminance. The light emitting element has: a IV semiconductor substrate; two or more core multi-shell nanowires disposed on the IV semiconductor substrate; a first electrode connected to the IV semiconductor substrate; and a second electrode, which covers the side surfaces of the core multi-shell nanowires, and which is connected to the side surfaces of the core multi-shell nanowires. Each of the core multi-shell nanowires has: a center nanowire composed of a first conductivity type III-V compound semiconductor; a first barrier layer composed of the first conductivity type III-V compound semiconductor; a quantum well layer composed of a III-V compound semiconductor; a second barrier layer composed of a second conductivity type III-V compound semiconductor; and a capping layer composed of a second conductivity type III-V compound semiconductor.

Group iii nitride semiconductor light-emitting device

A Group III nitride semiconductor light-emitting device includes a light-emitting layer having a multiple quantum structure including an Al x Ga 1-x N (0<x<1) layer as a barrier layer. When the light-emitting layer is divided into three blocks including first, second and third blocks in the thickness direction from the n-type-layer-side cladding layer to the p-type-layer-side cladding layer, the number of barrier layers are the same in the first and third blocks, and the Al composition ratio of each light-emitting layer is set to satisfy a relation x+z=2y and z<x where an average Al composition ratio of the barrier layers in the first block is represented as x, an average Al composition ratio of the barrier layers in the second block is represented as y, and an average Al composition ratio of the barrier layers in the third block is represented as z.

Diode-Based Devices and Methods for Making the Same

In accordance with an embodiment, a diode comprises a substrate, a dielectric material including an opening that exposes a portion of the substrate, the opening having an aspect ratio of at least 1, a bottom diode material including a lower region disposed at least partly in the opening and an upper region extending above the opening, the bottom diode material comprising a semiconductor material that is lattice mismatched to the substrate, a top diode material proximate the upper region of the bottom diode material, and an active diode region between the top and bottom diode materials, the active diode region including a surface extending away from the top surface of the substrate.

Polarization Direction of Optical Devices Using Selected Spatial Configurations

A GaN based light emitting diode device which emits polarized light or light of various degrees of polarization for use in the creation of optical devices. The die are cut to different shapes, or contain some indicia that are used to represent the configuration of the weak dipole plane and the strong dipole plane. This allows for the more efficient manufacturing of such light emitting diode based optical devices.

Elevated LED

The present invention relates to light emitting diodes comprising at least one nanowire. The LED according to the invention is an upstanding nanostructure with the nanowire protruding from a substrate. A bulb with a larger diameter than the nanowire is arranged in connection to the nanowire and at an elevated position with regards to the substrate. A pn-junction is formed by the combination of the bulb and the nanowire resulting in an active region to produce light.

Multicolored Light Converting LED With Minimal Absorption

Light emitting systems are disclosed. More particularly light emitting systems that utilize wavelength converting semiconductor layer stacks, and preferred amounts of potential well types in such stacks to achieve more optimal performance are disclosed 1. A light emitting system , comprising:an LED emitting pump light of a first wavelength from an emission surface of the LED; and m first type potential wells that absorb the pump light and emit light of a second wavelength longer than the first wavelength, m being an integer greater than or equal to one; and', 'n second type potential wells that absorb the pump light and emit light of a third wavelength longer than the first wavelength and shorter than the second wavelength, n being an integer greater than m; and', 'at least one region in the semiconductor stack allowing a portion of the pump light of the first wavelength to exit the light emitting system without going through the first or second type potential wells., 'a semiconductor layer stack disposed on the emission surface of the LED, the semiconductor stack comprising2. The light emitting system of claim 1 , wherein m is equal to one.3. The light emitting system of claim 1 , wherein n is greater than or equal to 3.4. The light emitting system of claim 1 , further comprising a plurality of regions that allow pump light of the first wavelength to travel through the semiconductor layer stack without wavelength conversion.5. The light emitting system of claim 1 , wherein the semiconductor layer stack further comprises a plurality of absorbers for absorbing the pump light claim 1 , the absorbers being stacked adjacent the first and second type potential wells.6. The light emitting of claim 4 , wherein an absorber layer closer to the emission surface of the LED is thinner than an absorber layer further from the surface of the LED.7. The light emitting system of claim 1 , wherein the semiconductor layer stack further comprises a window layer located between the LED ...

DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE

A display device includes a glass substrate, a glass substrate arranged at a distance from and opposite to the glass substrate, a lower electrode formed on the glass substrate, a counter electrode formed on the glass substrate opposite to the lower electrode, a spacer ball for supporting the glass substrate and the glass substrate to maintain a gap between the glass substrate and the glass substrate, and a plurality of conductive particles in particulate form arranged between the glass substrate and the glass substrate, a clearance being provided between the conductive particles positioned on the lower electrode and the counter electrode, the conductive particles positioned on the lower electrode being able to come into contact with the counter electrode when the glass substrate is pressed. 1. A display device comprising:a first substrate;a second substrate arranged at a distance from and opposite to said first substrate;a first electrode formed on said first substrate;a second electrode formed on said second substrate opposite to said first electrode;a support member for supporting said first substrate and said second substrate to maintain a gap between said first substrate and said second substrate; anda plurality of conductive members in particulate form arranged between said first substrate and said second substrate,a clearance being provided between said conductive members positioned on said first electrode and said second electrode,said conductive members positioned on said first electrode being able to come into contact with said second electrode when said second substrate is pressed.2. The display device according to claim 1 , whereineach of said conductive members includes an elastically deformable core portion, and a conductive film covering a surface of said core portion.3. The display device according to claim 1 , whereinsaid support member is an insulating member in particulate form arranged between said first substrate and said second substrate, said ...

LIGHT-EMITTING DEVICE

Disclosed is a light-emitting device, comprising: a first multi-quantum well structure comprising a plurality of first well layers and a first barrier layer stacked alternately, wherein the energy gap of the first barrier layer is larger than that of any one of the first well layers; a second multi-quantum well structure comprising a plurality of second well layers and a second barrier layer stacked alternately, wherein the energy gap of the second barrier layer is larger than that of any one of the second well layers; and a third barrier layer disposed between the first multi-quantum well structure and the second multi-quantum well structure, and the third barrier layer connected with the first well layer and the second well layer, wherein the energy gap of the third barrier layer is larger than that of any one of the first well layers and the second well layers, and the thickness of the third barrier layer is larger than that of any one of the first barrier layer and the second barrier layer. 1. A light-emitting device , comprising:a first multi-quantum well structure comprising a plurality of first well layers and a first barrier layer stacked alternately, wherein the energy gap of the first barrier layer is larger than that of any one of the first well layers;a second multi-quantum well structure comprising a plurality of second well layers and a second barrier layer stacked alternately, wherein the energy gap of the second barrier layer is larger than that of any one of the second well layers; anda third barrier layer disposed between the first multi-quantum well structure and the second multi-quantum well structure, and the third barrier layer connected with the first well layer and the second well layer, wherein the energy gap of the third barrier layer is larger than that of any one of the first well layers and the second well layers, and the thickness of the third barrier layer is larger than that of any one of the first barrier layer and the second barrier ...

DISPLAY DEVICE AND ELECTRONIC APPARATUS

A display panel including pixels disposed on a substrate, where each of the pixels includes a light emitting element, and a capacitor. The capacitor of a first one of the pixels is partially overlapped, in a vertical direction, by respective pixel areas of two of the pixels. The anode of the capacitor of the first one of the pixels may be disposed closer to the substrate than a cathode of the capacitor, thereby reducing a parasitic capacitance between the capacitor and an anode of the light emitting element of one of the two pixels overlapping the capacitor. 1. A display panel comprising a plurality of pixels disposed on a substrate , a light emitting element, and', 'a capacitor;, 'wherein each of the plurality of pixels includeswherein the capacitor of a first one of the plurality of pixels is partially overlapped, in a direction orthogonal to the substrate, by respective pixel areas of two of the plurality of pixels.2. The display panel of claim 1 , wherein the capacitor of the first one of the plurality of pixels is partially overlapped claim 1 , in a direction orthogonal to the substrate claim 1 , by respective first electrodes of the light emitting elements of the two of the plurality of pixels.3. The display panel of claim 2 , wherein the respective first electrodes of the light emitting elements of the two of the plurality of pixels are anode electrodes.4. The display panel of claim 1 , wherein the capacitor of the first one of the plurality of pixels is connected to a first electrode claim 1 , which is an anode electrode claim 1 , of the light emitting element thereof.5. The display panel of claim 4 , wherein the capacitor of the first one of the plurality of pixels is not connected to a first electrode claim 4 , which is an anode electrode claim 4 , of the light emitting element of any of the plurality of pixels other than the one of the plurality of pixels.6. The display panel of claim 4 , wherein the first one of the plurality of pixels is also one of the ...

ARRAY SUBSTRATE, LIQUID CRYSTAL PANEL AND DISPLAY DEVICE

Embodiments of the present invention disclose an array substrate, a liquid crystal panel and a display device. In the array substrate according to an embodiment of the present invention, each part of the pixel electrode constituting the pixel unit is contained within one structural unit, and slits of different parts of the pixel electrodes, which constitute different pixel units, within the structural unit have the same inclining direction, and therefore the transmissivity of the pixel unit can be increased. 1. An array substrate , comprising:a plurality of gate lines parallel to each other and a plurality of data lines parallel to each other, two gate lines adjacent to each other and two data lines adjacent to each other defining a structural unit; anda plurality of pixel units, one of the pixel units comprising:a first part pixel electrode having first slits and a second part pixel electrode having second slits, which are located within the structural units on two sides of a gate line, respectively, the first part pixel electrode and the second part pixel electrode being electrically connected;wherein, within a first structural unit to which the first part pixel electrode belongs, a third part pixel electrode having third slits is disposed in a region without the first part pixel electrode; an inclining direction of the third slits and an inclining direction of the first slits are the same, and the third part pixel electrode and the first part pixel electrode are electrically separated from each other; andwithin a second structural unit to which the second part pixel electrode belongs, a fourth part pixel electrode having fourth slits is disposed in a region without the second part pixel electrode; an inclining direction of the fourth slits and an inclining direction of the second slits are the same, and the fourth part pixel electrode and the second part pixel electrode are electrically separated from each other.2. The array substrate according to claim 1 , ...

ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

In an array substrate capable of improving the quality of displayed images and a method for manufacturing the array substrate, the array substrate includes a base substrate, a first conductive pattern including a gate line and a first light-blocking pattern, a semiconductor layer overlapping the light-blocking pattern, a second conductive pattern including a data line and a storage line overlapping the first light-blocking pattern, and a pixel electrode overlapping the storage line to form a storage capacitor. The first conductive pattern may further include a second light-blocking pattern overlapping the semiconductor layer which is formed under the data line. The first and second light-blocking patterns block light proceeding toward the semiconductor layer formed under the storage line and under the data line, respectively, so that the semiconductor layer may be prevented from being excited by light energy. 1. A method for manufacturing an array substrate , the method comprising:forming a first conductive layer on a base substrate and patterning the first conductive layer to form a first conductive pattern including a gate line and a first light-blocking pattern;forming a semiconductor layer and a second conductive layer on the first conductive pattern;patterning the second conductive layer and the semiconductor layer to form a second conductive pattern and a pattern of the semiconductor layer overlapping the first light-blocking pattern, the second conductive pattern including a data line extending in a second direction crossing a first direction defining an extension direction of the gate line and a storage line overlapping the first light-blocking pattern; andforming a pixel electrode on the second conductive layer, the pixel electrode overlapping the storage line.2. The method of claim 1 , wherein the semiconductor layer is in contact with the storage line.3. The method of claim 2 , wherein the semiconductor layer is patterned so that a first end portion of ...

DISPLAY APPARATUS

Provided is a display apparatus and a method of manufacture. The display apparatus includes a first substrate with a plurality of organic electroluminescence devices, a second substrate with a color filter, the second substrate facing the first substrate, and an adhesive layer disposed between the first substrate and the second substrate so as to cover the plurality of organic electroluminescence devices, the adhesive layer being made of a material selected from the group consisting of a phenol resin, a melanin resin, an unsaturated polyester resin, an epoxy resin, a silicon resin and a polyurethane resin. 1. A display apparatus comprising:a first substrate with an EL layer including a plurality of organic electroluminescence devices;a second substrate with a color filter, the second substrate facing the first substrate;a fixing portion made of a curing resin that is bonded between the first and second substrates, and that is provided along at least a portion of an outer perimeter of the EL layer.2. The display apparatus according to claim 1 , wherein the curing resin is an ultraviolet curing resin.3. The display apparatus according to claim 1 , wherein the fixing portion is provided along each side of the outer perimeter of the EL layer.4. The display apparatus according to claim 1 , wherein at least a portion of the outer perimeter of the EL layer does not include the fixing portion.5. The display apparatus according to claim 1 , further comprising an insulating layer formed between adjacent organic electroluminescence devices claim 1 , and formed between the EL layer and the fixing layer.6. The display apparatus according to claim 1 , wherein the fixing layer has a crescent shape.7. The display apparatus according to claim 6 , wherein the fixing layer has a concave inner surface that faces the EL layer.8. The display apparatus according to claim 1 , further comprising an adhesive layer disposed between the first substrate and the second substrate so as to contact ...

Organic light-emitting panel, manufacturing method thereof, and organic display device

A pixel in the panel includes sub-pixels 100 a , 100 b , and 100 c . Bank 105 a separates organic light-emitting layer of sub-pixel 100 a and organic light-emitting layer of a sub-pixel of a pixel that is adjacent to sub-pixel 100 a . Bank 105 d separates organic light-emitting layer of sub-pixel 100 c and organic light-emitting layer of a sub-pixel of a pixel that is adjacent to sub-pixel 100 c . Bank 105 b separates organic light-emitting layer of sub-pixel 100 a and organic light-emitting layer of sub-pixel 100 b . Bank 105 c separates organic light-emitting layer of sub-pixel 100 b and organic light-emitting layer of sub-pixel 100 c . Inclination angle θcb of sidewall 105 cb of bank 105 c located on the side of sub-pixel 100 c is set to be larger than other inclination angles θaa, θba, θbb, θcc and θdc.

THIN FILM TRANSISTOR, DISPLAY DEVICE, AND MANUFACTURING METHOD FOR THIN FILM TRANSISTOR AND DISPLAY DEVICE

The present invention has an object of providing a TFT in which generation of an OFF current is reduced by an efficient manufacturing method. A thin film transistor according to the present invention has a gate electrode formed on a substrate , an insulating layer formed on the gate electrode , a microcrystalline amorphous silicon layer and an amorphous silicon layer that are formed on the insulating layer , a semiconductor layer containing an impurity formed on the amorphous silicon layer , and a source electrode A and a drain electrode B that are formed on the semiconductor layer containing an impurity. The microcrystalline amorphous silicon layer and the semiconductor layer containing an impurity are connected to each other through the amorphous silicon layer without being in direct contact with each other. 1. A thin film transistor , comprising:a gate electrode formed on a substrate;an insulating layer formed so as to cover said gate electrode;a microcrystalline amorphous silicon layer and an amorphous silicon layer that are formed on said insulating layer;a semiconductor layer containing an impurity formed on said amorphous silicon layer; anda source electrode and a drain electrode that are formed on said semiconductor layer containing an impurity,wherein said microcrystalline amorphous silicon layer and said semiconductor layer containing an impurity are connected to each other through said amorphous silicon layer without being in direct contact with each other,wherein said semiconductor layer containing the impurity includes a first contact portion that is in contact with said source electrode and a second contact portion that is in contact with said drain electrode, andwherein when viewed in a cross-section that is normal to a plane of said substrate and that cuts across said source electrode and said drain electrode, a width of said microcrystalline amorphous silicon layer is narrower than a width of a space between said first contact portion and said ...

Organic light-emitting display panel and manufacturing method

Embodiments of the invention provide an organic light-emitting display (OLED) panel and a manufacturing method for the OLED panel, which comprises providing a substrate comprising a first electrode layer which comprises a plurality of first electrodes spaced apart from each other, forming an insulating layer on the substrate, etching off the insulating layer over the first electrodes by a photolithography process to form a pattern of sub-pixel depositing areas and forming organic light-emitting layers for desired colors within the sub-pixel depositing areas, and forming a second electrode layer on the insulating layer and the organic light-emitting layers. Embodiments of the invention can exactly prepare the organic light-emitting layers to improve yield.

BROAD-AREA LIGHTING SYSTEMS

In accordance with certain embodiments, illumination systems are formed by aligning light-emitting elements with optical elements and/or disposing light-conversion materials on the light-emitting elements, as well as by providing electrical connectivity to the light-emitting elements 160.-. (canceled)61. A light-emitting device , comprising a substrate;a plurality of electrical traces disposed on a first surface of the substrate;a plurality of light-emitting elements disposed over the first surface of the substrate, each light-emitting element being electrically connected to at least two electrical traces on the first surface of the substrate;an optical substrate comprising a plurality of cavities in a first surface thereof;wherein the first surface of the substrate is adjacent to the first surface of the optical substrate and each light-emitting element is (i) at least partially inserted into one of the cavities in the optical substrate, and (ii) at least partially surrounded by a light-conversion material.62. The light-emitting device of claim 61 , wherein each of the light-emitting elements comprises a bare-die light-emitting diode.63. The light-emitting device of claim 62 , wherein each bare-die light-emitting diode comprises one or more semiconductor materials selected from the group consisting of silicon claim 62 , InAs claim 62 , AlAs claim 62 , GaAs claim 62 , InP claim 62 , AlP claim 62 , GaP claim 62 , InSb claim 62 , GaSb claim 62 , AlSb claim 62 , GaN claim 62 , AlN claim 62 , InN claim 62 , and mixtures and alloys thereof64. The light-emitting device of claim 61 , wherein each of the light-emitting elements comprises a packaged light-emitting diode.65. The light-emitting device of claim 64 , wherein each packaged light-emitting diode comprises one or more semiconductor materials selected from the group consisting of silicon claim 64 , InAs claim 64 , AlAs claim 64 , GaAs claim 64 , InP claim 64 , AlP claim 64 , GaP claim 64 , InSb claim 64 , GaSb claim ...

LOW COST MOUNTING OF LEDs IN TL-RETROFIT TUBES

This invention relates to a lighting device comprising a light transmissive light outlet unit ( 102 ), and light emitting diodes ( 104 ) generating light which is emitted through the light outlet unit. The lighting device further comprises a conductive layer structure ( 114 ), which is arranged as a coating on a portion of an inner surface of the light outlet unit. The light emitting diodes are mounted on and electrically connected with the conductive layer structure.

DEPOSITION APPARATUS AND DEPOSITION METHOD

A light-emitting device includes a transistor over a substrate and an insulating film over the transistor. The light-emitting device further includes a wiring over the insulating film and a light-emitting element. The insulating film includes a first opening and a second opening, and the wiring is electrically connected to the transistor through the first opening. The light-emitting element is provided in the second opening, and includes a first electrode, a second electrode, and an organic compound layer provided between the first electrode and the second electrode. 1. A light-emitting device comprising:a transistor comprising an interlayer insulating film over a substrate, the interlayer insulating film comprising an opening;a pixel electrode electrically connected to the transistor, the pixel electrode overlapping with the opening; a first region comprising a first compound over the pixel electrode;', 'a second region comprising a second compound over the first region; and', 'a third region comprising the first compound and the second compound between the first region and the second region; and, 'an organic compound layer over the pixel electrode, the organic compound layer comprisinga cathode over the organic compound layer,wherein the second compound is an organic compound having a hole transporting property.2. The light-emitting device according to claim 1 , wherein the first compound is an organic compound having a hole injecting property.3. The light-emitting device according to claim 1 , wherein the interlayer insulating film is formed at opposite ends of the pixel electrode.4. The light-emitting device according to claim 1 , wherein the third region functions as a mixed region.5. The light-emitting device according to claim 1 , wherein the organic compound layer emits a light from a region overlapping with the opening.6. A display device comprising the light-emitting device according to .7. A light-emitting device comprising:an insulating film over a ...

LIGHT-EMITTING DEVICES WITH VERTICAL LIGHT-EXTRACTION MECHANISM

A light-emitting device comprises a lattice structure to minimize the horizontal waveguide effect by reducing light traveling distance in the light-absorption medium of the light-emitting devices, and to enhance light extraction from the light-emitting layer. The lattice structure includes sidewalls and/or rods embedded in the light-absorption medium and dividing the light-absorption medium into a plurality of area units. The area units are completely isolated or partially separated from each other by the sidewalls. Also provided is a method of fabricating a light-emitting device that comprises a lattice structure, which lattice structure includes sidewalls and/or rods embedded in the light-absorption medium and dividing the light-absorption medium into a plurality of area units. 1. A light-emitting device comprising:a n-type layer;a p-type layer;an light-emitting layer sandwiched between the n-type layer and the p-type layer; anda lattice structure comprising sheet-shaped sidewalls which penetrate the light-emitting layer but do not completely penetrate the p-type layer, and divide the light-emitting layer into a plurality of area units.2. The light-emitting device of claim 1 , wherein the area units are completely isolated from each other by the sheet-shaped sidewalls of the lattice structure.3. The light-emitting device of claim 2 , wherein the sheet-shaped sidewalls of the lattice structure penetrate the n-type layer and divide the n-type layer into a plurality of area units.4. The light-emitting device of claim 3 , further comprising a conductive layer deposited adjacent to and in direct contact with the n-type layer and being in electrical connection with each of the area units of the n-type layer.5. The light-emitting device of claim 1 , wherein the lattice structure extends into the p-type layer.620. The light-emitting device of claim 1 , wherein the area units are partially separated from each other by the sheet-shaped sidewalls claim 1 , and an enclosure ...

Light-emitting diode and display apparatus using same

To provide a light-emitting diode enabling improvements to color purity as well as to luminous efficiency, a light-emitting diode comprises a reflective electrode and a transparent electrode having functional layers therebetween, the functional layers being a transparent conductive layer, a hole injection layer, and a hole transport layer, and further comprises a light-emitting layer emitting blue light and having an electron transport layer layered thereon, such that a total optical layer thickness of the functional layers sandwiched between the reflective electrode and the light-emitting layer is in a range of 455.4 nm to 475.8 nm, inclusive.

LIQUID CRYSTAL PANEL SUBSTRATE, LIQUID CRYSTAL PANEL, AND ELECTRONIC DEVICE AND PROJECTION DISPLAY DEVICE USING THE SAME

In a liquid crystal substrate in which a matrix of reflecting electrodes is formed on a substrate, a transistor is formed corresponding to each reflective electrode and a voltage is applied to the reflective electrode through the transistor. A silicon oxide film having a thickness of 500 to 2,000 angstroms is used as the passivation film and the thickness is set to a value in response to the wavelength of the incident light to maintain a substantially constant reflectance. 118-. (canceled)19. A substrate for a display panel , comprising:a plurality of reflective parts that are formed in a pixel region, each of the plurality of reflective parts being positioned at a first position corresponding to one pixel of a plurality of pixels;a plurality of first switching elements that are formed in the pixel region, each of the plurality of first switching elements being positioned at a second position corresponding to one pixel of the plurality of pixels;a metal layer that overlaps at least a part of one first switching element of the plurality of first switching elements;a driving circuit that is positioned outside of the pixel region, the driving circuit including a plurality of second switching elements; anda wire that is positioned in the driving circuit, the wire being electrically connected to one second switching element of the plurality of second switching elements.20. The substrate according to claim 19 ,the metal layer being formed in a first layer in which the wire is formed.21. The substrate according to claim 19 ,a material constituting the metal layer being identical with a material constituting the wire.22. The substrate according to claim 19 ,the plurality of first switching elements being a plurality of first transistors,a gate of one first transistor of the plurality of first transistors being formed between the first layer and a semiconductor region including a source and a drain of the one first transistor.23. A display panel comprising:{'claim-ref': {'@ ...

TFT-LCD ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

A thin film transistor liquid crystal display (TFT-LCD) array substrate comprising a gate line and a data line formed on a base substrate. The gate line and the data line intersect with each other to define a pixel region, in which a pixel electrode and a thin film transistor (TFT) are formed, and a first insulating layer and a second insulating layer are interposed between the gate line and the data line, and the pixel electrode is disposed between the first insulating layer and the second insulating layer. A method of manufacturing a TFT-LCD is also disclosed. 1. A method of producing a thin film transistor liquid crystal display (TFT-LCD) array substrate , comprising:depositing a gate metal thin film on a base substrate and patterning the gate metal film to form a gate line and a gate electrode;sequentially depositing a first insulating layer and a transparent conductive thin film on the base substrate and patterning the transparent conductive thin film to form a pixel electrode;sequentially depositing a second insulating layer, a semiconductor thin film and a doped semiconductor thin film on the base substrate and patterning the second insulating layer, the semiconductor thin film and the doped semiconductor thin film to form an active layer island and an insulating layer through hole in the second insulating layer, wherein the insulating layer through hole is located over the pixel electrode; anddepositing a source/drain metal thin film on the base substrate and patterning the source/drain metal thin film to form a data line, a source electrode, a drain electrode and a TFT channel region, wherein the drain electrode is connected with the pixel electrode via the insulating layer through hole, and the doped semiconductor layer in the TFT channel region is completely etched to expose the underlying semiconductor thin film.2. The method of producing a TFT-LCD array substrate according to claim 1 , wherein the forming of the active layer island and the insulating ...

ORGANIC LIGHT-EMITTING PANEL, MANUFACTURING METHOD THEREOF, AND ORGANIC DISPLAY DEVICE

A pixel in the panel includes sub-pixels , and . The sub-pixel is defined by banks and . The sub-pixel is defined by banks and . The sub-pixel is defined by banks and . Organic light-emitting layers are formed in sub-pixels by, for each pixel, applying ink to the sub-pixels , and in the stated order and drying the applied ink. With regard to a sidewall of the bank , sidewalls and of the bank , and a sidewall of the bank , inclination angles of the sidewalls satisfy relationships: inclination angle θaa and inclination angle θba are equal, and inclination angle θcb is larger than inclination angle θbb. 1. An organic light-emitting panel comprising:an array of a plurality of pixels; 'each organic light-emitting layer being formed by applying, for each pixel, three types of ink respectively to the three light-emitting cells in an order of the first light-emitting cell, the second light-emitting cell and the third light-emitting cell, the three types of ink containing different organic light-emitting materials corresponding one-to-one to the different colors of light; and', 'a plurality of light-emitting cells provided in such a manner that each pixel includes three light-emitting cells that are arranged in an alignment and emit light of different colors, the three light-emitting cells including a first light-emitting cell located at an end of the alignment, a second light-emitting cell located at a central portion of the alignment, and a third light-emitting cell located at another end of the alignment, each light-emitting cell including an underlying layer, a first electrode provided in the underlying layer, an organic light-emitting layer, and a second electrode formed on an opposite side of the organic light-emitting layer from the underlying layer,'}a plurality of banks which, formed above the underlying layer, define each light-emitting cell by separating the light-emitting cells one from another,the plurality of pixels including a pixel that is structured such ...

Light Emitting, Photovoltaic Or Other Electronic Apparatus and System

The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of lenses suspended in a polymer deposited or attached over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes are substantially spherical, and have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap. 1. An apparatus , comprising:a base comprising a plurality of spaced-apart channels;a plurality of first conductors coupled to the base, each first conductor in a corresponding channel of the plurality of spaced-apart channels;a plurality of diodes coupled to the plurality of first conductors;a plurality of second conductors coupled to the plurality of diodes; anda plurality of substantially spherical lenses having at least a first index of refraction, the plurality of substantially spherical lenses suspended in a first polymer having at least a second, different index of refraction.2. The apparatus of claim 1 , wherein the plurality of diodes are substantially spherical claim 1 , substantially toroidal claim 1 , substantially cylindrical claim 1 , substantially faceted claim 1 , substantially rectangular claim 1 , substantially flat claim 1 , or substantially elliptical.3. The apparatus of claim 1 , wherein about fifteen percent to fifty-five percent of a surface of each ...

Array substrate for flat display device and manufacturing the same

In one embodiment, an array substrate for a flat display device includes a gate line extending in a first direction, a source line extending a in second direction orthogonally crossing the first direction. A switching element includes a semiconductor layer, a gate electrode electrically connected with the gate line, a source electrode electrically connected with the gate line in contact with the semiconductor layer and a drain electrode in contact with the semiconductor layer. An insulating film covers the source line and the switching element, and includes a contact hole exposing the drain electrode. A pixel electrode is formed on the insulating film. An insulating filling component is filled in the contact hole of the insulating film so as to be interposed between the drain electrode and the pixel electrode in a pixel in which the source line is short-circuited with the drain electrode.

Display unit and method of manufacturing the same, electronic apparatus, illumination unit, and light-emitting device and method of manufacturing the same

A display unit includes: a plurality of light-emitting devices; and a separation section disposed between any adjacent two of the plurality of light-emitting devices and including a photoexcited material. A light-emitting device includes: an excitation light source; a wavelength conversion layer converting excitation light emitted from the excitation light source into light of a wavelength different from a wavelength of the excitation light; and a wavelength selection film disposed on a surface farther from the excitation light source of the wavelength conversion layer.

Optoelectronic Structures with High Lumens Per Wafer

An optoelectronic structure includes a wafer, a plurality of light emitting diode structures on a surface of the wafer, and a coating including a wavelength conversion material on the plurality of light emitting diode structures. The light emitting diode structures and the coating are configured to emit white light in response to electrical energy supplied to the light emitting diode structures. The light emitting diode structures from a single wafer are configured to generate an aggregate light output in excess of 800,000 lumens. 1. An optoelectronic structure , comprising:a wafer;a plurality of light emitting diode structures on a surface of the wafer, the light emitting diode structures comprising a common epitaxial structure; anda coating comprising a wavelength conversion material on the plurality of light emitting diode structures, wherein the light emitting diode structures and the coating are configured to collectively emit white light in response to electrical energy supplied to the light emitting diode structures;wherein the light emitting diode structures, when singulated, are configured to generate an aggregate light output in excess of 800,000 lumens.2. The optoelectronic structure of claim 1 , wherein the light emitting diode structures are configured to generate an aggregate light output in excess of 825 claim 1 ,000 lumens.3. The optoelectronic structure of claim 2 , wherein the light emitting diode structures are configured to generate an aggregate light output in excess of 862 claim 2 ,500 lumens.4. The optoelectronic structure of claim 3 , wherein the light emitting diode structures are configured to generate an aggregate light output in excess of 1 claim 3 ,000 claim 3 ,000 lumens.5. The optoelectronic structure of claim 4 , wherein the light emitting diode structures are configured to generate an aggregate light output in excess of 1 claim 4 ,250 claim 4 ,000 lumens.6. The optoelectronic structure of claim 1 , wherein the wafer comprises an ...

FILTER LAYER SUBSTRATE AND DISPLAY APPARATUS

A filter layer substrate comprises a substrate, a black matrix layer, a filter layer, a protection layer, a first photoresist spacer, and a second photoresist spacer. The black matrix layer is disposed on the substrate. The filter layer covers the substrate and the black matrix layer. The protection layer is disposed on the filter layer. The first photoresist spacer is disposed on the protection layer corresponding to the black matrix layer. The second photoresist spacer is disposed on the protection layer corresponding to the black matrix layer. A bottom surface of the first photoresist spacer and a bottom surface of the second photoresist spacer have a height difference. A display apparatus containing the filter layer substrate is also disclosed. Accordingly, the liquid crystal margin of the LC filling can be enlarged, and the problems caused by the stress and the external collision or vibration can be avoided. 1. A display apparatus , comprising:a filter layer substrate comprising:a substrate;a black matrix layer disposed on the substrate;a filter layer covering the substrate and the black matrix layer;a protection layer disposed on the filter layer;a first photoresist spacer disposed on the protection layer and corresponding to the black matrix layer; anda second photoresist spacer disposed on the protection layer and corresponding to the black matrix layer, wherein a bottom surface of the first photoresist spacer and a bottom surface of the second photoresist spacer have a height difference.2. The display apparatus as recited in claim 1 , wherein the filter layer has at least one opening for exposing a surface of the black matrix layer claim 1 , the protection layer covers the filter layer and the black matrix layer and has a recess corresponding to the opening claim 1 , and the second photoresist spacer is disposed in the recess.3. The display apparatus as recited in claim 1 , wherein the thickness of the first photoresist spacer is the same as that of the ...

ACTIVE MATRIX SUBSTRATE, METHOD FOR FABRICATING THE SAME, AND DISPLAY DEVICE

An active matrix substrate includes: an electrode layer formed on the insulating substrate within a display region; a mark disposed on the insulating substrate within a non-display region, and made of a same material as the electrode layer; a first insulating film directly covering each of the electrode layer and the mark; and a second insulating film covering a part of the first insulating film. Within at least a part of the sealing region, the second insulating film is removed from the insulating substrate. The mark is disposed in the at least the part of the sealing region in which the second insulating film is removed, and is provided to overlap at least a part of the sealing region. A protective film is formed on the insulating substrate to cover a side surface and a surface of the first insulating film covering the mark, the surface of the first insulating film being located opposite from the insulating substrate. 2. The active matrix substrate of claim 1 , whereinwithin the display region, a transparent conductive film is formed on a surface of the second insulating film, andthe protective film is made of a same material as the transparent conductive film.3. The active matrix substrate of claim 1 , whereinthe first insulating film is made of an inorganic insulating film, andthe second insulating film is made of an organic insulating film.4. The active matrix substrate of claim 1 , whereina semiconductor layer is disposed between the protective film and the first insulating film covering the mark.5. The active matrix substrate of claim 1 , whereinthe protective film directly covers the first insulating film covering the mark.6. The active matrix substrate of claim 1 , whereinthe mark is an alignment mark used for alignment between the active matrix substrate and the counter substrate.7. A display device claim 1 , comprising:a first substrate;a second substrate disposed to face the first substrate;a frame-shaped sealing member disposed between the first ...

SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE UNIT, ACTIVE MATRIX SUBSTRATE, LIQUID CRYSTAL PANEL, AND LIQUID CRYSTAL DISPLAY

A semiconductor device () provided with at least a plurality of transistors and bootstrap capacitors (Ca and Cb), the semiconductor device () includes: a semiconductor layer () made of the same material as a channel layer of each of the transistors; a capacitor electrode () formed in an upper layer of the semiconductor layer (); and a clock signal line () formed in an upper layer of the capacitor electrode (), the capacitor electrode () being connected to a gate electrode of each of the transistors, the clock signal line () being supplied with a clock signal (CK) from outside the semiconductor device (), the capacitors (Ca and Cb) each being formed in an overlap section where the semiconductor layer (), the gate insulating film () and the capacitor electrode () overlap one another, the overlap section and the clock signal line () overlapping each other when viewed from above. 1. A semiconductor device including at least a transistor and a bootstrap capacitor , the semiconductor device comprising:a first electrode made of a material that is the same as a material of a channel layer of the transistor;a second electrode formed in an upper layer of the first electrode;a control signal line formed in an upper layer of the second electrode;a first insulating film provided between the first electrode and the second electrode; anda second insulating film provided between the second electrode and the control signal line,the second electrode being connected to a gate electrode of the transistor,the control signal line being supplied with a control signal from outside the semiconductor device,the bootstrap capacitor being formed in an overlap section where the first electrode, the first insulating film and the second electrode overlap one another,the overlap section and the control signal line overlapping each other when viewed from above.2. The semiconductor device as set forth in claim 1 , wherein the control signal is a clock signal.3. The semiconductor device as set forth ...

Light Emitting Diode (LED) Using Three-Dimensional Gallium Nitride (GaN) Pillar Structures with Planar Surfaces

A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.

FLEXIBLE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, IMAGE DISPLAY DEVICE USING THE SAME AND METHOD FOR MANUFACTURING THE IMAGE DISPLAY DEVICE

There is provided a method for manufacturing a flexible semiconductor device. The manufacturing method of the flexible semiconductor device of the present invention comprising the steps of: forming a gate electrode; forming a gate insulating film so that the gate insulating film contacts with the gate electrode; forming a semiconductor layer on the gate insulating film such that the semiconductor layer is opposed to the gate electrode; forming source and drain electrodes so that the source and drain electrodes contact with the semiconductor layer; forming a flexible film layer so that the flexible film layer covers the semiconductor layer and the source and drain electrodes; forming vias in the flexible film layer; forming a first metal layer by disposing a metal foil onto the flexible film layer, and thereby a semiconductor device precursor is provided; and subjecting the first metal layer to a processing treatment to form a wiring from a part of the first metal layer, wherein, in the step of the processing treatment of the first metal layer, the wiring is formed in a predetermined position by using at least one of the vias as an alignment marker. 1. A method for manufacturing a flexible semiconductor device , comprising the steps of:forming a gate electrode;forming a gate insulating film so that the gate insulating film contacts with the gate electrode;forming a semiconductor layer on the gate insulating film such that the semiconductor layer is opposed to the gate electrode;forming source and drain electrodes so that the source and drain electrodes contact with the semiconductor layer;forming a flexible film layer so that the flexible film layer covers the semiconductor layer and the source and drain electrodes;forming vias in the flexible film layer;forming a first metal layer by disposing a metal foil onto the flexible film layer, and thereby a semiconductor device precursor is provided; andsubjecting the first metal layer to a processing treatment to form a ...

LIGHT-EMITTING DEVICE

A light-emitting device includes a substrate, and a plurality of light-emitting elements that are mounted on the substrate and each emit light within a same color region. The plurality of light-emitting elements satisfy at least one of a first condition and a second condition. The first condition is that a maximum deviation in peak wavelength of light emitted from the plurality of light-emitting elements is not less than 1.25 nm. The second condition is that a maximum deviation in threshold voltage of the plurality of light-emitting elements is not less than 0.05 V. 1. A light-emitting device , comprising:a substrate; anda plurality of light-emitting elements that are mounted on the substrate and each emit light within a same color region,wherein the plurality of light-emitting elements satisfy at least one of a first condition and a second condition,wherein the first condition is that a maximum deviation in peak wavelength of light emitted from the plurality of light-emitting elements is not less than 1.25 nm, and wherein the second condition is that a maximum deviation in threshold voltage of the plurality of light-emitting elements is not less than 0.05 V.2. The light-emitting device according to claim 1 , wherein the peak wavelength of lights emitted from the plurality of light-emitting elements is in a range of 380 to 435 nm claim 1 , 435 to 480 nm claim 1 , 480 to 500 nm claim 1 , 500 to 570 nm claim 1 , 570 to 590 nm claim 1 , 590 to 620 nm or 620 to 750 nm.3. The light-emitting device according to claim 1 , further comprising:a reflector on the substrate to reflect the light emitted from the plurality of light-emitting elements.4. The light-emitting device according to claim 1 , wherein in the first condition the maximum deviation in peak wavelength is not more than 7.5 nm.5. The light-emitting device according to claim 1 , wherein in the first condition the maximum deviation in peak wavelength is not less than 2.5 nm.6. The light-emitting device according ...

LIGHTING DEVICE

In a first aspect of the present invention, a lighting device including a metal plate, an electrical insulation layer that is smaller in size than an outline of the metal plate and arranged on an upper surface of the metal plate, a light-emitting element mounted on the electrical insulation layer, and a first connecting electrode and a second connecting electrode electrically connected to the light-emitting element and arranged on the electrical insulation layer. 1. A lighting device , comprising:a metal plate;an electrical insulation layer that is smaller in size than an outline of the metal plate and arranged on an upper surface of the metal plate;a light-emitting element mounted on a the electrical insulation layer;a first connecting electrode and a second connecting electrode electrically connected to the light-emitting element and arranged on the electrical insulation layer.2. The lighting device according to claim 1 , whereinthe electrical insulation layer is square in shape on the upper surface of the metal plate.3. The lighting device according to claim 1 , whereinthe electrical insulation layer is rectangular in shape on the upper surface of the metal plate.4. The lighting device according to claim 1 , whereinthe metal plate comprises an aluminum plate.5. The lighting device according to claim 1 , whereinthe electrical insulation layer comprises a ceramic ink layer.6. The lighting device according to claim 1 , whereinthe light-emitting element at a lower surface of the light-emitting element is in contact with the electrical insulation layer.7. The lighting device according to claim 6 , whereinthe lower surface of the light-emitting element is buried in the electrical insulation layer.8. The lighting device according to claim 1 , whereinthe upper surface of the metal plate appears around a periphery of the electrical insulation layer.9. The lighting device according to claim 5 , whereinthe metal plate further comprises a cut portion cut into a periphery of ...

ELECTROLUMINESCENT ELEMENT, DISPLAY DEVICE AND LIGHTING DEVICE

An electroluminescent element () is provided with: a lamination section in which a first conductive layer (), a dielectric layer (), a second conductive layer (), a light-emitting layer () and a third conductive layer () are laminated in order; and contact holes () for at least penetrating through the dielectric layer () and electrically connecting the first conductive layer () and the second conductive layer (). When viewed from the light-emitting surface side, the electroluminescent element () (i) has at least one continuous light-emitting region, and (ii) the number of contact holes () is 10or more per one light-emitting region and such that the ratio of the area of the contact holes () to the area of the light-emitting region is 0.1 or less. Thus, it is possible to provide an electroluminescent element, etc., that is easily manufactured and has high light emission uniformity. 1. An electroluminescent element comprising:a lamination section in which a first conductive layer, a dielectric layer, a second conductive layer, a light-emitting layer and a third conductive layer are laminated in order; andcontact holes that penetrate through at least the dielectric layer to electrically connect the first conductive layer and the second conductive layer, wherein, as viewed from a light-emitting surface side,(i) at least one continuous light-emitting region is provided, and{'sup': '2', '(ii) a number of the contact holes is not less than 10per the one light-emitting region and a ratio of an area of the contact holes to an area of the light-emitting region is not more than 0.1.'}2. The electroluminescent element according to claim 1 , wherein the ratio of the area of the contact holes to the area of the light-emitting region is 0.001 to 0.1.3. The electroluminescent element according to claim 1 , wherein a diameter of a minimum circle enclosing a shape of each contact hole as viewed from the light-emitting surface side is 0.01 μm to 2 μm.4. The electroluminescent element ...

SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD FOR PRODUCING SAME, AND DISPLAY DEVICE

A semiconductor light-emitting device () includes an LED chip (), a lead () having a main surface () on which the LED chip () is mounted, and a resin package () covering the LED chip (). The main surface () is roughened, and the main surface () is held in contact with the resin package (). These configurations contribute to the downsizing of the semiconductor light-emitting device (). 1. A semiconductor light-emitting device comprising:a semiconductor light-emitting element;a first lead including a first main surface on which the semiconductor light-emitting element is mounted; anda resin package covering the semiconductor light-emitting element;wherein the first main surface is roughened, andthe first main surface and the resin package are held in contact with each other.2. The semiconductor light-emitting device according to claim 1 , wherein the first main surface includes a plated layer claim 1 , and the plated layer is formed with a rough surface.3. The semiconductor light-emitting device according to claim 2 , wherein the plated layer is an Ag-plated layer.4. The semiconductor light-emitting device according to claim 1 , wherein the first lead includes a first mounting terminal face located on a side opposite to the first main surface and exposed from the resin package.5. The semiconductor light-emitting device according to claim 4 , wherein the first lead includes a plurality of first side faces extending in a direction in which the first main surface and the first mounting terminal face are separated from each other claim 4 , and at least a part of each of the first side faces is covered with the resin package.6. The semiconductor light-emitting device according to claim 5 , wherein the first lead includes a first drawn-out portion extending from the first side face and provided with a leading end face exposed from the resin package.7. The semiconductor light-emitting device according to claim 4 , wherein the first lead includes a first buried surface ...

Array substrate and liquid crystal display panel

The disclosed technology discloses an array substrate and a liquid crystal display panel. The array substrate comprises: a base substrate; a gate line and a data line formed on the base substrate, the gate line and the data line defining a plurality of pixel regions; and a first electrode layer and a second electrode layer formed in each pixel region; and an insulating layer provided between the first electrode layer and the second electrode layer. The first electrode layer, the insulating layer and the second electrode layer are laminated on the base substrate in this order. The first electrode layer is provided with a plurality of first apertures therein, and the first electrode layer comprises a plurality of first electrode portions located between the plurality of first apertures.

STEREOSCOPIC IMAGE DISPLAY SUBSTRATE

A stereoscopic image display substrate includes a base substrate, a data line, a plurality of gate line parts and a pixel electrode part. The data line is disposed on the base substrate. The data line extends in a first direction. The gate line parts are disposed on the base substrate. Each gate line part includes a plurality of gate lines extending in a second direction different from the first direction. The gate lines are adjacent to each other. The pixel electrode part is disposed between the gate line parts. The pixel electrode part includes at least three pixel electrodes connected to the data line. 1. A stereoscopic image display substrate comprising:a base substrate;a data line disposed on the base substrate, the data line extending in a first direction;a plurality of gate line parts disposed on the base substrate, each gate line part including a plurality of gate lines extending in a second direction different from the first direction, the gate lines being adjacent to each other; anda pixel electrode part disposed between the gate line parts, the pixel electrode part including at least three pixel electrodes connected to the data line.2. The stereoscopic image display substrate of claim 1 , wherein the gate line parts comprises a first gate line part and a second gate line part claim 1 , and the plurality of gate lines of the first gate line part are adjacent to each other claim 1 , and the plurality of gate lines of the second gate line part are adjacent to each other.3. The stereoscopic image display substrate of claim 1 , wherein the gate line parts comprises a first gate line part and a second gate line part claim 1 , and the first gate line part is disposed adjacent to a first side of the pixel electrode part claim 1 , andwherein the second gate line part is disposed adjacent to a second side of the pixel electrode part.4. The stereoscopic image display substrate of claim 1 , wherein each of the pixel electrodes comprises a width in the first direction ...

PRINTED LIGHT EMITTING DEVICES AND METHOD FOR FABRICATION THEROF

An array of light emitting devices and a method for large area fabrication of such is provided. The method includes providing a continuous flexible substrate and printing one or more layers of light emitting devices comprised of layers of transparent conductor, light emitting material, dielectric and electrode on the flexible substrate. The array of light emitting devices includes a flexible substrate and one or more layers of light emitting devices on the flexible substrate. The one or more layers of light emitting devices include layers of transparent conductor, light emitting material, dielectric and electrode. 1. A method for large area fabrication of an array of light emitting devices , the method comprising the steps of:providing a continuous flexible substrate; andprinting one or more layers of light emitting devices comprised of layers of transparent conductor, light emitting material, dielectric and electrode on the flexible substrate.2. The method in accordance with wherein the step of printing one or more devices comprises:printing first devices having the transparent conductor printed on the flexible substrate, with the other layers of the first devices printed as light emitting material on the transparent conductor, dielectric on the light emitting material, and electrode on the dielectric; andprinting second devices having the electrode printed on the flexible substrate, with the other layers of the second devices printed as dielectric on the electrode, light emitting material on the dielectric, and transparent conductor on the light emitting material.3. The method in accordance with further comprising:printing a layer of adhesive on the top most layer of the one or more layers of light emitting devices.4. The method in accordance with wherein the one or more layers of light emitting devices are two layers of light emitting devices claim 3 , the method further comprising:laminating the two layers of light emitting devices using the adhesive.5. The ...

OPTOELECTRONIC DEVICE COMPRISING NANOSTRUCTURES OF HEXAGONAL TYPE CRYSTALS

An optoelectronic device comprising: a first conductive layer, a second conductive layer, an active layer between the first conductive layer and the second conductive layer, wherein the active layer comprises a submicrometer size structure of hexagonal type crystals of an element or alloy of elements selected from the carbon group. 1. An optoelectronic device comprising:a first conductive layer,a second conductive layer,an active layer between the first conductive layer and the second conductive layer, whereinthe active layer comprises a submicrometer size structure of hexagonal type crystals of an element or alloy of elements selected from the carbon group.2. The optoelectronic device according to claim 1 , wherein at least parts of the nanostructures of hexagonal type crystals have a layer structure.3. The optoelectronic device according to claim 1 , wherein at least parts of the nanostructures of hexagonal type crystals have a filament structure.4. The optoelectronic device according to claim 1 , wherein at least parts of the nanostructures of hexagonal type crystals have a dot structure.5. The optoelectronic device according to claim 1 , wherein at least parts of the nanostructures of hexagonal type crystals are under a strain in at least in one direction.6. The optoelectronic device according to claim 1 , wherein the active layer has a thickness greater or equal to 10 nm and less than or equal to 1000 nm.7. The optoelectronic device according to claim 1 , wherein the element of the carbon group is silicon.8. The optoelectronic device according to claim 1 , wherein the electronic affinity of the first conductive layer is lower less than the electronic affinity of the active layer and the ionisation energy of the second conductive layer is greater than the ionisation energy of the active layer.9. The optoelectronic device according to claim 8 , wherein the optoelectronic device further comprises between the active layer and the first conductive layer a first ...

ARRAY SUBSTRATE AND MANUFACTURING METHOD

Manufacturing an array substrate includes forming data and gate lines which cross and a gate electrode on a substrate. The data line is discontinuously disposed to be separated from the gate line, or the gate line is discontinuously disposed to be separated from the data line. Active and gate insulating layers including bridge and source electrode vias are formed on the substrate. The bridge vias correspond to adjacent discontinuous sections of the data line or the gate line. The source electrode via corresponds to the data line. Pixel, source, and drain electrodes and a bridge line are formed on the substrate. The pixel electrode and the drain electrode are integral. The source electrode is connected to the data line through the source electrode via. The bridge line connects adjacent discontinuous sections of the data line or adjacent discontinuous sections of the gate line through bridge vias. 1. An array substrate , comprising:a base substrate,a data line and a gate line crossed with each other on the base substrate so as to define a pixel unit, anda pixel electrode and a thin film transistor (TFT) arranged in the pixel unit,wherein the TFT comprises a gate electrode, an active layer, a source electrode and a drain electrode, the data line and the gate line are formed in the same layer, and the data line is discontinuously disposed so as to be separated from the gate line or the gate line is discontinuously disposed so as to be separated from the data line;bridge via holes and a source electrode via hole are formed in a gate insulating layer covering the data line, the gate line and the gate electrode, and the bridge via holes are located at positions respectively corresponding to adjacent discontinuous sections of the data line or adjacent discontinuous sections of the gate line, and the source electrode via hole corresponds to the data line; andthe source electrode, the drain electrode, the pixel electrode and the bridge line are formed in the same layer, and ...

Light-emitting diode device

The present invention is directed to a light-emitting diode (LED) device, which includes at least one LED unit. Each LED unit includes at least one LED, which includes a first doped layer, a second doped layer and a conductive defect layer. The conductive defect layer is formed on the first or second doped layer. The conductive defect layer may be deposited between two LEDs, or between the first/second doped layer and an electrode.

LIGHT EMITTING DIODE PACKAGE HAVING INTERCONNECTION STRUCTURES

A light emitting diode (LED) package includes a substrate, a first LED chip and a second LED chip. The substrate includes first to fourth electrodes, and an interconnection electrode. A mounting area is defined at center of a top surface of the substrate. The first to fourth electrodes are respectively in four corners of the substrate out of the mounting area. The first interconnection electrode is embedded in the substrate to electrically connect the first and the third electrodes. The first LED chip and the second LED chip are arranged in the mounting area. Each LED chip includes an anode pad and a cathode pad. The first to fourth electrodes are respectively connected to the four pads of the first and the second LED chips via a plurality of metal wires, and no metal wire connection is formed between the first and the second LED chips. 1. A light emitting diode (LED) package comprising:a substrate comprising a first electrode, a second electrode, a third electrode, a fourth electrode, and an interconnection electrode, a mounting area defined at center of a top surface of the substrate, the first to fourth electrodes respectively positioned in four corners of the substrate out of the mounting area and exposed from the top surface of the substrate, the first interconnection electrode embedded in the substrate to electrically connect the first and the third electrodes; anda first LED chip and a second LED chip arranged on the mounting area, each LED chip comprising an anode pad and a cathode pad;wherein the first to fourth electrodes are respectively connected to the four pads of the first and the second LED chips via a plurality of metal wires, and no metal wire connection is formed between the first and the second LED chips.2. The LED package of claim 1 , wherein the first to fourth electrodes have top surfaces coplanar to the top surface of the substrate.3. The LED package of claim 1 , wherein the first and the fourth electrodes extend from the top surface to a ...

NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT

A nitride-based semiconductor light-emitting element includes a substrate and a nitride semiconductor multilayer structure. The nitride semiconductor multilayer structure includes a nitride semiconductor active layer which emits polarized light. Angle θ, which is formed by at least one of the plurality of lateral surfaces of the substrate with respect to the principal surface of the substrate, is greater than 90°. Angle θ (mod 180°), which is an absolute value of an angle which is formed by an intersecting line of at least one of the plurality of lateral surfaces of the substrate and the principal surface of the substrate with respect to a polarization direction in the principal surface of the polarized light, is an angle which does not include 0° or 90°. 1. A nitride-based semiconductor light-emitting element comprising:a substrate which has a principal surface, a rear surface that is a light extraction surface, and a plurality of lateral surfaces; anda nitride semiconductor multilayer structure formed on the principal surface of the substrate, whereinthe nitride semiconductor multilayer structure includes an active layer which emits polarized light,angle θ is greater than 90°, and{'b': '2', 'angle θ (mod 180°) is an angle which does not include 0° or 90°,'}where the angle θ is an angle which is formed by at least one of the plurality of lateral surfaces of the substrate with respect to the principal surface of the substrate, and{'b': '2', 'the angle θ is an absolute value of an angle which is formed by an intersecting line of at least one of the plurality of lateral surfaces of the substrate and the principal surface of the substrate with respect to a polarization direction in the principal surface of the polarized light.'}2. The nitride-based semiconductor light-emitting element of claim 1 , wherein the substrate is an off-cut substrate of not more than 5°.31. The nitride-based semiconductor light-emitting element of claim 1 , wherein a value of (θ−90°) is not ...

Method for Manufacturing Light-Emitting Device

A full-color light-emitting device is achieved with plural kinds of light-emitting elements in each of which a stacked layer of a first material layer formed selectively with a droplet discharge apparatus and a second material layer formed by vapor-deposition method using the conductive-surface plate on which a layer containing an organic compound is formed is provided between a pair of electrodes. The first material layer is a layer in which an organic compound and a metal oxide which is an inorganic compound are mixed. By adjusting the thickness of the first material layer of each light-emitting element, which is different depending on an emission color, a blue light emission component, a green light emission component, or a red light emission component among a plurality of components for white light emission can be selectively emphasized and taken out by light interference phenomenon. 120-. (canceled)21. A method for manufacturing a light-emitting device , the light-emitting device having at least a first light emitting element emitting a first color and a second light emitting element emitting a second color different from the first color , comprising steps of:forming a layer containing an organic compound over a conductive-surface plate in a first film-formation chamber;forming a first material layer of the first light emitting element over a substrate having a first electrode in a second film-formation chamber;forming a first material layer of the second light emitting element over the substrate having the first electrode in the second film-formation chamber;holding the substrate and the conductive-surface plate in a third film-formation chamber to make the first material layers and the layer containing the organic compound face each other with a mask interposed therebetween;evaporating the layer containing the organic compound formed over the conductive-surface plate by heating the conductive-surface plate so that a second material layer containing the ...

Light Emitting Systems and Methods

A light emitting system and related method are disclosed. 1. A light-emitting system comprising:at least one light-emitting device having a p-doped region, an n-doped region, an active region disposed between the p-doped region and n-doped region, an n-contact layer disposed on the n-doped layer and a p-contact layer disposed on the p-doped layer;wherein the at least one light-emitting device is encapsulated in an encapsulant layer such that a top side and bottom side of the light-emitting device are substantially devoid of the encapsulant; andconductive patterns formed on the encapsulant layer, the patterns forming a circuit for connecting to a power source for operating the at least one light-emitting device, the formed circuit being in electrical communication with the n-contact layer and p-contact layer of the at least one light-emitting device;wherein the at least one light-emitting device is selected from the group consisting of light-emitting diode, surface mount device (SMD) package incorporating at least one light-emitting diode, integrated circuit incorporating at least one light-emitting diode, or a combination thereof.2. A light-emitting system according to claim 1 , wherein the p-contact layer and the n-contact layer of the light-emitting device are disposed on the same side of the light-emitting device claim 1 , on the side that is opposite a light emission surface of the light-emitting device.3. A light-emitting system according to claim 1 , wherein the p-contact layer and the n-contact layer of the light-emitting device are disposed on the opposite sides of the light-emitting device.4. A light-emitting system according to claim 1 , further comprising a transparent encapsulation layer.5. A light-emitting system according to claim 1 , further comprising a light converting phosphor layer.6. A light-emitting system according to claim 1 , further comprising a carrier layer with conductive patterns disposed thereon being in electrical communication with ...

SEMICONDUCTOR LIGHT EMITTING DEVICE

Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first semiconductor layer, a second semiconductor layer, an active layer formed between the first semiconductor layer and the second semiconductor layer, a first reflective electrode on the first semiconductor layer to reflect incident light, and a second reflective electrode on the second semiconductor layer to reflect the incident light. 1. A semiconductor light emitting device comprising:a substrate;a first semiconductor layer on the substrate;a plurality of light emitting structures, each light emitting structure comprising a portion of the first semiconductor layer on the substrate, an active layer on the portion of the first semiconductor layer, and a second semiconductor layer on the active layer;a plurality of transparent electrodes on the respective second semiconductor layers of the plurality of light emitting structures;a first electrode on a portion of the first semiconductor layer; anda second electrode comprising a first set of divided electrodes, the first set of divided electrodes configured to contact the plurality of transparent electrodes and electrically interconnect to each other.2. The semiconductor light emitting device according to claim 1 , wherein the transparent electrode includes at least one selected from the group consisting of RuO claim 1 , TiO claim 1 , IrO claim 1 , and GaO.3. The semiconductor light emitting device according to claim 1 , wherein the first set of divided electrodes of the second electrode each comprises:an ohmic contact layer configured to contact a portion of each of the plurality of transparent electrodes; anda reflective layer configured to contact the ohmic contact layer.4. The semiconductor light emitting device according to claim 3 , wherein the ohmic contact layer includes at least one of Ti or Cr.5. The semiconductor light emitting device according to claim 1 , wherein the first electrode comprises a second ...

LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF

The present invention discloses an LED and its fabrication method. The LED comprises: a sapphire substrate; an epitaxial layer, an active layer and a capping layer arranged on the sapphire substrate in sequence; wherein a plurality of cone-shaped structures are formed on the surface of the sapphire substrate close to the epitaxial layer. The cone-shaped structures can increase the light reflected by the sapphire substrate, raising the external quantum efficiency of the LED, thus increasing the light utilization rate of the LED. Furthermore, the formation of a plurality of cone-shaped structures can improve the lattice matching between the sapphire substrate and other films, reducing the crystal defects in the film formed on the sapphire substrate, increasing the internal quantum efficiency of the LED. 1. A light emitting diode , comprising:a sapphire substrate;an epitaxial layer, an active layer and a capping layer arranged on the sapphire substrate in sequence;wherein, a plurality of cone-shaped structures are formed on the surface of the sapphire substrate close to the epitaxial layer.2. The light emitting diode as claimed in claim 1 , characterized in that claim 1 , the cone-shaped structures are rectangular pyramid structures.3. The light emitting diode as claimed in claim 2 , characterized in that claim 2 , the rectangular pyramid structure has a square base and four isosceles triangular faces having the same dimension claim 2 , adjacent rectangular pyramid structures sharing one edge claim 2 , the included angle between adjacent rectangular pyramid structures being 60˜120 degrees.4. The light emitting diode as claimed in claim 1 , characterized in that claim 1 , the cone-shaped structures are triangular pyramid structures claim 1 , hexagonal pyramid structures claim 1 , octagonal pyramid structures or circular cone structures.5. The light emitting diode as claimed in claim 1 , characterized in that claim 1 , the light emitting diode further comprises a buffer ...

LIGHT-EMITTING APPARATUS, IMAGE-FORMING APPARATUS, DISPLAY APPARATUS, AND IMAGE PICKUP APPARATUS

An organic EL element uses the maximum optical interference effect and satisfactorily emits light. The first optical distance Lbetween the light-emitting layer and the first electrode of the organic EL element satisfies the following requirements: L>0 and (λ/8)×(−1−2Φ/π) Подробнее

DISPLAY APPARATUS

A display apparatus includes a display panel that displays an image, a window member, and an adhesive layer. The window member includes a base film that has a light transmission area that exposes the image of the display panel, the light transmission area is surrounded by a blocking area, a blocking pattern on the blocking area, and a dam pattern on the blocking pattern. The adhesive layer is between the display panel and the window member. 1. A display apparatus , comprising:a display panel that displays an image; a base film that has a light transmission area that exposes the image of the display panel, the light transmission area being surrounding by a blocking area,', 'a blocking pattern on the blocking area, and', 'a dam pattern on the blocking pattern; and, 'a window member, the window member includingan adhesive layer between the display panel and the window member.2. The display apparatus of claim 1 , wherein the dam pattern includes:a first pattern that surrounds the light transmission area, anda second pattern that surrounds the first pattern.3. The display apparatus of claim 2 , wherein the first pattern and the second pattern form a looped curve.4. The display apparatus of claim 2 , wherein the first pattern and the second pattern are similar figures.5. The display apparatus of claim 3 , wherein the first pattern and the second pattern have a zigzag shape.6. The display apparatus of claim 2 , wherein the dam pattern includes an open area in which the first and second patterns are partially removed.7. The display apparatus of claim 2 , wherein a width of each of the first and second patterns is greater than about 0.3 mm.8. The display apparatus of claim 2 , wherein a thickness of each of the first and second patterns is greater than about 0.7 μm.9. The display apparatus of claim 2 , wherein a gap between the first pattern and the second pattern is greater than about 0.3 mm.10. The display apparatus of claim 1 , wherein the blocking pattern includes a ...

Solid State Light Sheet Having Wide Support Substrate and Narrow Strips Enclosing LED Dies in Series

A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate. 120-. (canceled)21. An illumination device comprising: a non-packaged light-emitting diode (LED) die having a top electrode and a bottom electrode formed on opposite surfaces of the LED die;', 'a cup including an indentation, the indentation having substantially the same height as the LED die and at least a reflective surface, wherein the LED die is disposed in the indentation;, 'a light-emitting element, the light-emitting element comprisinga transparent top substrate having a first surface and a second surface opposing the first surface, wherein the first surface of the top substrate faces the light-emitting element; andfirst electrical conductors disposed on the first surface of the top substrate such that the top electrode of the LED die is in contact with the first electrical conductors, wherein the first electrical conductors are configured to provide power to the LED die.22. The illumination device of claim 21 , further comprising:a bottom substrate having a third surface; andsecond electrical conductors disposed on the third surface of the bottom substrate such that the bottom electrode of the LED die is coupled to the second electrical conductors, wherein the second electrical conductors are configured to provide power to the LED die.23. The illumination device ...

DISPLAY APPARATUS AND METHOD FOR MANUFACTURING DISPLAY APPARATUS

A display device is provided including a plurality of light emitting devices formed on a substrate, a plurality of first members corresponding to the light emitting devices and formed directly on a portion of the respective light emitting device, and a plurality of second members formed in areas between adjacent first members. The first members and the second members are configured to reflect and guide at least a portion of light emitted from the light emitting sections through the first members. 1. A display device comprising:a plurality of light emitting devices formed on a substrate;a plurality of first members corresponding to the light emitting devices and formed directly on a portion of the respective light emitting device; anda plurality of second members formed in areas between adjacent first members,wherein the first members and the second members are configured to reflect and guide at least a portion of light emitted from the light emitting sections through the first members.2. The display device according to claim 1 ,wherein at least one light emitting device includes a first electrode, a second electrode, and a light emitting layer formed between the first and second electrodes, andwherein the first members are formed directly on the second electrodes of the respective light emitting devices.3. The display device according to claim 2 , wherein the light emitting layer is formed on the first electrodes and on the second members.4. The display device according to claim 3 , wherein the first electrodes are made of a light reflecting material claim 3 , and the second electrodes are made of an at least partially transparent material.5. The display device according to claim 1 ,wherein at least one light emitting device includes a first electrode, a second electrode, and a light emitting layer formed between the first and second electrodes, andwherein the first members are formed directly on the first electrodes of the respective light emitting devices, and are ...

ORGANIC ELECTROLUMINESCENT DEVICE INCLUDING COVERED LOWER ELECTRODE

An emitting device in an organic electroluminescent device is disclosed, in which a lower electrode pattern is formed on a substrate, an emitting layer pattern is formed on the lower electrode pattern, and a transparent electrode is formed on the emitting layer pattern and an emitting body having a structure in which an organic thin film emits light when an application current is applied to it. The pattern of the transparent electrode completely covers and is larger than that of the lower electrode. The pattern of the transparent electrode is formed over the entire area of the pattern of the lower electrode. 1. A light emitter , comprising:a transparent electrode disposed on an end surface of a light guide member;a light emitting layer disposed on the transparent electrode; anda metal electrode disposed on the light emitting layer,wherein a portion of the metal electrode is disposed on a portion of the transparent electrode, andwherein the metal electrode is larger than the transparent electrode.2. The light emitter of claim 1 , wherein the light emitting layer is configured as a hole injection layer and an electron transport layer.3. The light emitter of claim 1 , further comprising an insulating layer claim 1 ,wherein an end portion of the insulating layer contacts the pattern of the light emitting layer.4. The light emitter of claim 1 , wherein the light emitter emits light when current is applied to the light emitting layer.5. The light emitter of claim 1 , further comprising:a first light emitter group configured to emit red light;a second light emitter group configured to emit green light; anda third light emitter group configured to emit blue light.6. The light emitter of claim 3 , further comprising:a first light emitter group configured to emit red light;a second light emitter group configured to emit green light; anda third light emitter group configured to emit blue light.7. The light emitter of claim 4 , further comprising:a first light emitter group ...

SEMICONDUCTOR LIGHT EMITTING DEVICE, LIGHT EMITTING MODULE, AND ILLUMINATION APPARATUS

A semiconductor light emitting device includes a substrate, a semiconductor laminate having a base semiconductor layer, a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on the substrate and divided by an isolation region to provide a plurality of light emitting cells, an intermediate separation layer interposed between the base semiconductor layer and the first conductivity-type semiconductor layer, a plurality of first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, of the plurality of light emitting cells, and a wiring unit connecting the first and second electrodes of different light emitting cells. 1. A semiconductor light emitting device comprising:a substrate;a semiconductor laminate having a base semiconductor layer, a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on the substrate and divided by an isolation region to provide a plurality of light emitting cells;an intermediate separation layer interposed between the base semiconductor layer and the first conductivity-type semiconductor layer in order to electrically separate the base semiconductor layer and the first conductivity-type semiconductor layer;a plurality of first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, of the plurality of light emitting cells; anda wiring unit connecting the first and second electrodes of different light emitting cells such that the plurality of light emitting cells are connected.2. The semiconductor light emitting device of claim 1 , wherein the intermediate separation layer is a material layer having an energy band gap equal to or greater than that of the first conductivity-type semiconductor layer.3. The semiconductor light emitting device of claim 2 , wherein the semiconductor ...

LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

A method of fabricating a liquid crystal display device includes a gate line and a gate electrode on the first substrate; a first insulating layer over the first substrate; an active; a source electrode and a drain electrode on the active layer, the source electrode and the drain electrode including a first conductive layer, a transparent conductive layer and a second conductive layer being sequentially formed; a data line formed by the transparent conductive layer and the second conductive layer; a pixel electrode formed by the transparent conductive layer; an organic insulating layer on the data line; a second insulating layer over the entire upper surface of the first substrate; a common electrode overlap with the pixel electrode and the organic insulating layer, and the common electrode and the pixel electrode generating a fringe electric field. 1. A liquid crystal display device comprising:a first substrate;a gate line and a gate electrode on the first substrate;a first insulating layer over the first substrate having the gate line and the gate electrode;an active layer on the first insulating layer;a source electrode and a drain electrode on the active layer, the source electrode and the drain electrode including a first conductive layer, a transparent conductive layer and a second conductive layer being sequentially disposed;a data line connected to the source electrode on the first insulating layer, the data line being formed by the transparent conductive layer and the second conductive layer;a pixel electrode connected to the drain electrode on the first insulating layer, the pixel electrode being formed by the transparent conductive layer;an organic insulating layer on the data line;a second insulating layer over the entire upper surface of the first substrate having the organic insulating layer;a common electrode on the second insulating layer to be overlap with the pixel electrode and the organic insulating layer, and the common electrode and the pixel ...

METHOD AND SYSTEM FOR FORMING LED LIGHT EMITTERS

A method for forming a flexible sheet of LED light emitters includes forming a micro lens sheet having a plurality of micro lenses, forming a phosphor sheet including a wave-length converting material, forming a flexible circuit sheet, forming a ceramic substrate sheet including a plurality of LED light emitters, and forming a support substrate including a thermally conductive material. The method also includes attaching the above sheets to form a stack including, from top to bottom, the micro lens sheet, the phosphor sheet, the flexible circuit sheet, the ceramic substrate sheet, and the support substrate. 1. A method for forming a flexible sheet of light-emitting diode (LED) light emitters , comprising:forming a lens sheet having a plurality of micro lenses;forming a phosphor sheet including a wave-length converting material;forming a flexible circuit sheet;forming a ceramic substrate sheet including a plurality of LED light emitters;forming a support substrate including a thermally conductive material; andforming a sheet of LED emitters by forming a stack of sheets including the micro lens sheet, the phosphor sheet, the flexible circuit sheet, and the ceramic substrate sheet.2. The method of claim 1 , wherein the sheet of LED emitters also comprises the support substrate.3. The method of claim 1 , wherein forming the stack of sheets comprises applying thermal energy.4. The method of claim 1 , wherein forming the stack of sheets using mechanical pressure.5. The method of claim 1 , wherein the micro lens sheet comprises a glass material.6. The method of claim 1 , wherein the micro lens sheet comprises a plurality of preformed notches or cracks.7. The method of claim 1 , wherein the flexible circuit sheet comprises conductive lines and solder joints formed on a flexible and stretchable material.8. The method of claim 1 , wherein the flexible circuit sheet comprises conductive lines formed in zig-zag shapes.9. The method of claim 1 , wherein the ceramic substrate ...

LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. 1. A light emitting device , comprising:a plurality of light emitting cells disposed spaced apart from each other;an insulation layer covering the light emitting cells; andan electrical connector disposed on the insulation layer,wherein each of the plurality of light emitting cells comprises:a lower semiconductor layer;an upper semiconductor layer disposed on a first region of the lower semiconductor layer;an active layer disposed between the lower semiconductor layer and the upper semiconductor layer, andan electrode layer disposed between the upper semiconductor layer and the insulation layer,wherein the insulation layer comprises first openings on second regions of the lower semiconductor layers.2. The light emitting device of claim 1 , wherein the first openings are spaced apart from each other.3. The light emitting device of claim 2 , wherein the insulation layer comprises a silicon oxide layer.4. The light emitting device of claim 2 , wherein the insulation layer further comprises second openings disposed on the electrode layers.5. The light emitting device of claim 4 , wherein ...

Doped sapphire as substrate and light converter for light emitting diode

Described is a material composition comprising a crystalline sapphire material doped with two or more dopants, wherein when a primary radiation comprising blue light is propagated through the crystalline material at least a portion of the primary radiation is converted into a first secondary radiation and a second secondary radiation that is emitted from the crystalline material, wherein the first secondary radiation comprises green light and the second secondary radiation comprises red light, and wherein the primary radiation, first secondary radiation and second secondary radiation when combined produce white light. Also described are LED devices employing the material composition as a light transmissive substrate.

LIQUID CRYSTAL DISPLAY DEVICE, MANUFACTURING METHOD OF THE SAME AND ELECTRONIC EQUIPMENT

A liquid crystal display device includes first and second substrates, liquid crystal layer, and first and second spacer sections. The first substrate has a first surface including a light-shielding region in a lattice form and a plurality of opening regions surrounded by the light-shielding region. The light-shielding region includes a plurality of first extended portions extending in a first direction and a plurality of second extended portions extending in a second direction that intersects the first direction. The first substrate has a plurality of transistors formed thereon. The second substrate has a second surface that is opposed to and spaced from the first surface. The liquid crystal layer is arranged between the first and second surfaces. The first spacer section has long sides oriented in the second direction, and the second spacer section has long sides oriented in the first direction. The spacer sections protrude into the liquid crystal layer. 1. A liquid crystal display device comprising:a first substrate having a first surface, the first surface including a light-shielding region in a lattice form and a plurality of opening regions surrounded by the light-shielding region, the light-shielding region including a plurality of first extended portions extending in a first direction and a plurality of second extended portions extending in a second direction that intersects the first direction, the first substrate having a plurality of transistors formed thereon;a second substrate having a second surface that is opposed to and spaced from the first surface;a liquid crystal layer arranged between the first and second surfaces;a first spacer section having long sides oriented in the second direction and formed on one of the first or second surfaces, arranged at one of a plurality of intersections obtained as a result of each of the plurality of first extended portions intersecting one of the plurality of second extended portions and protruding into the liquid ...

LIGHTING DEVICE AND LIGHTING METHOD

A lighting device comprising first and second groups of solid state light emitters, which emit light having peak wavelength in ranges of from 430 nm to 480 nm and from 600 nm to 630 nm, respectively, and a first group of lumiphors which emit light having dominant wavelength in the range of from 555 nm to 585 nm. In some embodiments, if current is supplied to a power line, a combination of (1) light exiting the lighting device which was emitted by the first group of emitters, and (2) light exiting the lighting device which was emitted by the first group of lumiphors would, in an absence of any additional light, produce a sub-mixture of light having x, y color coordinates within an area on a 1931 CIE Chromaticity Diagram defined by points having coordinates (0.32, 0.40), (0.36, 0.48), (0.43, 0.45), (0.42, 0.42), (0.36, 0.38). Also provided is a method of lighting. 120-. (canceled)21. A lighting device comprising:at least one light source which, when illuminated, emits light which, in an absence of any additional light, has x, y color coordinates which define a point which is within a first area on a 1931 CIE Chromaticity Diagram enclosed by first, second, third, fourth and fifth line segments, the first line segment connecting a first point to a second point, the second line segment connecting the second point to a third point, the third line segment connecting the third point to a fourth point, the fourth line segment connecting the fourth point to a fifth point, and the fifth line segment connecting the fifth point to the first point, the first point having x, y coordinates of 0.32, 0.40, the second point having x, y coordinates of 0.36, 0.48, the third point having x, y coordinates of 0.43, 0.45, the fourth point having x, y coordinates of 0.42, 0.42, and the fifth point having x, y coordinates of 0.36, 0.38; anda first group of solid state light emitters, the first group of solid state light emitters comprising at least a first solid state light emitter, each of ...

DISPLAY SUBSTRATE

A display substrate includes a gate line extended in one direction of a base substrate, a first data line extended in a direction crossing the gate line, a transverse storage line extended in the extending direction of the gate line and crossing the first data line, a longitudinal storage line extended in the extending direction of the first data line and crossing the transverse storage line, a portion of an overlapping area between the longitudinal storage line and the transverse storage line is exposed in a contact part region having an opening partially exposing the transverse storage line. A contact electrode covers the contact part opening and makes electrical contact with each of the transverse storage line and the longitudinal storage line. 1. A display substrate comprising:a plurality of gate lines extended along a first direction and on a base substrate;a plurality of data lines extended in a second direction and crossing with the gate lines;a plurality of transverse storage lines extended in the first direction and crossing with the data lines;a plurality of longitudinal storage lines extended in the second direction and crossing with the transverse storage lines,wherein at least a first of the transverse storage lines has an exposed portion partially exposing the first transverse storage line such that the first transverse storage line can be contacted at its exposed portion; anda contact electrode covering and making contact with the exposed portion of the first transverse storage line, the contact electrode further making contact with a crossing-by first of the longitudinal storage lines.2. The display substrate of claim 1 , wherein a sidewall surface of the first longitudinal storage line is exposed in a first contact part area where the first of the transverse storage lines has an exposed portion claim 1 , and wherein the contact electrode contacts with a top surface of the first transverse and first longitudinal storage lines and the sidewall surface ...

LIGHT-EMITTING DEVICE

A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. The channel length of the driving TFTs is selected to be very larger than the channel width of the driving TFTs to improve current characteristics in the saturated region, and a high Vis applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT. 1. A display device comprising:a transistor comprising a semiconductor layer and a gate electrode,wherein the semiconductor layer comprises a first region and a second region,wherein the first region extends in a first direction,wherein the second region extends in a second direction perpendicular to the first direction,wherein the first region comprises a first impurity region,wherein the second region comprises a second impurity region,wherein the first impurity region and the second impurity region have the same conductivity type, andwherein the gate electrode overlaps with the first region and the second region.2. The display device according to claim 1 , further comprising an insulating film over the transistor and a current supply line over the transistor and the insulating film.3. The display device according to claim 2 , further comprising a source signal line claim 2 ,wherein the source signal line is electrically connected to the transistor and configured to supply voltage to the transistor.4. The display device according to claim 2 , further comprising a light emitting element comprising a pixel electrode over the insulating film claim 2 ,wherein the first impurity region is electrically connected to the ...

LIGHT-EMITTING DIODE COMPRISING DIELECTRIC MATERIAL LAYER AND MANUFACTURING METHOD THEREOF

Disclosed is a light-emitting diode with a semiconductor layer including dielectric material layer, and a manufacturing method thereof for increasing the external quantum efficiency. The semiconductor layer includes a non-flat structure having a plurality of recess regions, and at least one dielectric material layer disposed within each recess region, the dielectric material layer has a generally inverted pyramid shape or a ball shape, and a portion of the non-flat structure is exposed outside the dielectric material layer. Photons emitted from the active layer are scattered by the dielectric material layer as photon scattering structure, and are guided by the inclined internal side faces of the recess regions so that the probability of photons escaping from the light-emitting diode is increased, and thus total internal reflection is reduced, thereby increasing the extraction efficiency and hence the external quantum efficiency. 1. A light-emitting diode comprising: a first portion, wherein the top surface of said first portion is treated into a non-flat structure having a plurality of recess regions;', 'at least one dielectric material layer disposed within each recess region; and', 'a second portion disposed on said non-flat structure and said dielectric material layer,, 'a semiconductor layer comprisingwherein a portion of said non-flat structure is exposed outside said dielectric material layer.2. The light-emitting diode of claim 1 , wherein said semiconductor layer is disposed on a substrate.3. The light-emitting diode of claim 2 , wherein said substrate is selected from a substrate base claim 2 , an epitaxial layer claim 2 , a metal layer claim 2 , or an active layer.4. The light-emitting diode of claim 2 , wherein said semiconductor layer is interposed between said substrate and an active layer.5. The light-emitting diode of claim 1 , wherein said semiconductor layer includes at least one material selected from the group comprising an element semiconductor ...

LED PACKAGES FOR AN LED BULB

A light-emitting diode (LED) bulb includes a base, a shell connected to the base, a thermally conductive liquid held within the shell, and one or more support structures disposed within the shell. One or more LEDs are mounted to the one or more support structures and immersed in the thermally conductive liquid. The one or more LEDs each comprise a semiconductor die having at least one light-emitting interface and the one or more LEDs configured to emit light from the at least one light-emitting interface directly into the thermally conductive liquid. 1. A light-emitting diode (LED) bulb comprising:a base;a shell connected to the base;a thermally conductive liquid held within the shell;one or more support structures disposed within the shell; and 'wherein the one or more LEDs each comprise a semiconductor die having at least one light-emitting interface, the one or more LEDs configured to emit light from the at least one light-emitting interface directly into the thermally conductive liquid.', 'one or more LEDs mounted to the one or more support structures and immersed in the thermally conductive liquid,'}2. The LED bulb of claim 1 , wherein the LED bulb omits a lens disposed between the at least one light-emitting interface and the thermally conductive liquid.3. The LED bulb of claim 1 , wherein the semiconductor die of each of the one or more LEDs is directly mounted to the one or more support structures.4. The LED bulb of claim 1 , wherein the one or more support structures includes a flexible circuit claim 1 , and the semiconductor die of each of the one or more LEDs is directly mounted to the flexible circuit.5. The LED bulb of claim 1 , wherein the one or more support structures includes a flexible circuit claim 1 , a plurality of the one or more LEDs are electrically connected to a flexible circuit claim 1 , and the plurality of LEDs are electrically connected together through the flexible circuit.6. The LED bulb of claim 5 , wherein the flexible circuit ...

PASSIVATION FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE

In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure. 1. A method comprising:providing a structure comprising:a wafer comprising a plurality of semiconductor light emitting devices, each light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region;a passivation layer disposed on a side of at least one of the semiconductor light emitting devices; anda first material disposed on the wafer between two semiconductor light emitting devices;disposing a second material between the structure and a mount, wherein the first material is configured to adhere to the second material; andattaching the structure to the mount.2. The method of further comprising separating the two semiconductor light emitting devices by singulating the wafer in a region where the first material is disposed.3. The method of wherein the first material is one of an insulating layer claim 1 , a dielectric layer claim 1 , AlN claim 1 , TiN claim 1 , SiO claim 1 , SiNO claim 1 , SiN claim 1 , and SiN.4. The method of wherein the first material is the passivation layer.5. The method of wherein the passivation layer is configured to reflect light emitted by the light emitting layer.6. The method of wherein the passivation layer is a multilayer dielectric stack.7. The method of wherein the passivation layer is configured to prevent contaminants from contacting the semiconductor light emitting device.8. The method of wherein the passivation layer is the second material.9. The method of wherein singulating comprises one of sawing and laser scribing and breaking.10. A method comprising:growing a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region; ...

ARRAY SUBSTRATE AND PIXEL UNIT OF DISPLAY PANEL

An array substrate and a pixel unit of a display panel include a plurality of subpixels arranged in a pixel array (N row*M column). Only one data line is disposed in a portion of two adjacent columns of subpixels in the pixel array, and two data lines are disposed in another portion of two adjacent columns of subpixels in the pixel array. 1. An array substrate of a display panel , comprising:a plurality of subpixels, wherein the subpixels are arranged in a pixel array of N rows and M columns, and the N and M are positive integers respectively;a plurality of active devices disposed in the subpixels respectively;{'sup': th', 'th', 'th', 'th', 'th', 'th, 'a plurality of first gate lines, wherein a pfirst gate line is disposed between the subpixels in a (3n−2)row and the subpixels in a (3n−1)row, n is a set of positive integers less than or equal to N/3, p is equal to n, and the pfirst gate line is electrically connected to the active devices of the subpixels in the (3n−2)row and the active devices of a portion of the subpixels in the (3n−1)row;'}{'sup': th', 'th', 'th', 'th', 'th', 'th, 'a plurality of second gate lines, wherein a psecond gate line is disposed between the subpixels in the (3n−1)row and the subpixels in a 3nrow, and the psecond gate line is electrically connected to the active devices of a portion of the subpixels in the (3n−1)row and the active devices of the subpixels in the 3nrow; and'} [{'sup': th', 'th', 'th', 'th', 'th', 'th', 'th, 'a plurality of first data lines, wherein a qfirst data line is disposed on one side of the subpixels in a (2m−1)column, m is a set of positive integers less than or equal to M/2, q is equal to m, and when m=1, the qfirst data line is electrically connected to the active devices of a portion of the subpixels in the (2m−1)column, and when 1≦m≦M/2, the qfirst data line is electrically connected to the active devices of a portion of the subpixels in a (2m−2)column and a portion of the subpixels in the (2m−1)column;'}, {' ...

METHOD OF MANUFACTURING SUBSTRATE FOR LED MODULE AND SUBSTRATE FOR LED MODULE MANUFACTURED BY THE SAME

Disclosed herein are a method of manufacturing a substrate for an LED module and a substrate for an LED module manufactured by the same, including: providing a base substrate having metal layers formed on both surfaces thereof; forming circuit patterns on the metal layers; applying a solder resist layer onto the circuit patterns; forming a through hole penetrating through the base substrate; separating the base substrate up and down; and bonding each of the separated base substrates to a parent substrate, thereby preventing light reflectivity of a parent substrate from being degraded due to a resist applying process and a surface treatment process. 1. A method of manufacturing a substrate for an LED module , comprising:providing a base substrate having metal layers formed on both surfaces thereof;forming circuit patterns on the metal layers;applying a solder resist layer onto the circuit patterns;separating the base substrate up and down; andbonding each of the separated base substrates to a parent substrate.2. The method according to claim 1 , further comprising claim 1 , after the applying of the solder resist layer onto the circuit patterns claim 1 , performing a surface treatment process on the exposed circuit patterns.3. The method according to claim 1 , further comprising forming a through hole penetrating through the base substrate at the time of forming the circuit patterns on the metal layer.4. The method according to claim 3 , further comprising claim 3 , after the bonding of each of the separated base substrates to the parent substrate claim 3 , plating an opened region by the through hole in the parent substrate.5. The method according to claim 1 , wherein the bonding of each of the separated base substrates to the parent substrate is performed by temporarily bonding a bonding sheet between the base substrate and the parent substrate.6. A method of manufacturing a substrate for an LED module claim 1 , comprising:providing two sheets of base substrate ...

TFT-LCD ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF

A thin film transistor liquid crystal display (TFT-LCD) array substrate comprises a plurality of gate lines and a plurality of data lines on a substrate. A plurality of pixel regions are defined by the gate lines and the data lines. Each of the pixel regions comprises a pixel electrode and a thin film transistor serving as a switch element. The gate electrode of the thin film transistor is connected with a corresponding gate line through a connection electrode, and the gate electrode is formed by a material layer different from that forming the gate lines. 1. A thin film transistor liquid crystal display (TFT-LCD) array substrate , comprising:a plurality of gate lines and a plurality of data lines on a substrate, anda plurality of pixel regions defined by the gate lines and the data lines, each of the pixel regions comprising a pixel electrode and a thin film transistor serving as a switch element,wherein a gate electrode of the thin film transistor is connected with a corresponding gate line through a connection electrode, and the gate electrode is formed by a material layer different from that forming the gate lines; andwherein the thin film transistor is a top gate type transistor, and the gate electrode of the thin film transistor is formed by a same transparent conductive film.2. The TFT-LCD array substrate according to claim 1 , wherein an active layer of the thin film transistor is formed on the substrate claim 1 , a source electrode of the thin film transistor is formed on the active layer and connected with corresponding data line claim 1 , a drain electrode of the thin film transistor is formed on the active layer and opposites to the source electrode claim 1 , and a first insulating layer is formed on the source electrode and the drain electrode to cover the entirety of the substrate.3. The TFT-LCD array substrate according to claim 2 , wherein the gate electrode and the pixel electrode are formed by a same transparent conductive film claim 2 , the gate ...

LIGHT EMITTING LAMP

Disclosed is a light emitting lamp including a light source module including at least one light source and a light guide layer disposed on a substrate burying the at least one light source, and a housing accommodating the light source module, and the at least one light source includes a body having a cavity, a first lead frame including one end exposed to the cavity and the other end passing through the body and exposed to one surface of the body, a second lead frame including one end exposed to one portion of the surface of the body, the other end exposed to the another portion of the surface of the body, and an intermediate part exposed to the cavity, and at least one light emitting chip including a first semiconductor layer, an active layer and a second semiconductor layer, and disposed on the first lead frame. 1. A light emitting device package comprising:a package body having a cavity;a first lead frame including one end exposed to the cavity and the other end passing through the package body and exposed to one surface of the package body;a second lead frame including one end exposed to one side of the surface of the package body, the other end exposed to the other side of the surface of the package body, and an intermediate part exposed to the cavity; andat least one light emitting chip including a first semiconductor layer, an active layer and a second semiconductor layer, and arranged on the first lead frame.2. The light emitting device package according to claim 1 , wherein the intermediate part of the second lead frame electrically connect the end and the other end of the second lead frame to each other.3. The light emitting device package according to claim 1 , wherein the first lead frame includes:a first upper surface part exposed to the cavity; anda first side surface part bent from a first side portion of the first upper surface part and exposed to the surface of the package body.4. The light emitting device package according to claim 3 , wherein at ...

DISPLAY DEVICE

In a display device connected with an IC driver, particularly the reliability of connection between an IC terminal located on the outermost side and the IC driver is improved. IC terminals and flexible wiring board terminals are formed on a terminal region of a TFT substrate. A plurality of the IC terminals are formed at a predetermined pitch. The reliability of an outermost IC terminal is degraded as compared with the reliability of the other IC terminals caused by the loading effect in etching a protection insulating film. In order to prevent this degradation, a dummy terminal is formed on the outer side of the outermost IC terminal, and the loading effect on the outermost IC terminal is made equal to the loading effect on the other IC terminals. Accordingly, degradation in the reliability of the outermost IC terminal is prevented. 1. A display device comprising:a TFT substrate including a terminal region and a display region on which a pixel including a TFT is formed in a matrix arrangement, with an IC driver connected to the terminal region of the TFT substrate,wherein an IC terminal to be connected to the IC driver is formed on the terminal region;the IC driver includes a bump to be connected to the IC terminal; anda plurality of the IC terminals are formed at a predetermined pitch, a dummy terminal is formed on an outer side of an IC terminal located on an outermost side of the plurality of the IC terminals, the dummy terminal is not connected to an interconnection on the display region, and no dummy terminal is formed on an inner side of the IC terminal located on the outermost side.2. The display device according to claim 1 , wherein the bump of the IC driver is not connected to the dummy terminal.3. The display device according to claim 2 , wherein the dummy terminal includes a through hole formed at least on an insulating film.4. The display device according to claim 3 , wherein the dummy terminal includes ITO covering the through hole.5. The display ...

Method for Producing a Semiconductor Layer Sequence, Radiation-Emitting Semiconductor Chip and Optoelectronic Component

A method can be used for producing a semiconductor layer sequence, which is based on a nitride compound semiconductor material and which comprises a microstructured outer surface. The method has the following steps: A) growing at least one first semiconductor layer of the semiconductor layer sequence on a substrate; B) applying an etch-resistant layer on the first semiconductor layer; C) growing at least one further semiconductor layer on the layer sequence obtained in step B); D) separating the semiconductor layer sequence from the substrate, a separating zone of the semiconductor layer sequence being at least partly removed; E) etching the obtained separating surface of the semiconductor layer sequence by an etching means such that a microstructuring of the first semiconductor layer is carried out and the microstructured outer surface is formed. 115-. (canceled)16. A method for producing a semiconductor layer sequence based on nitride compound semiconductor material and having a microstructured outer surface , the method comprising:growing a first semiconductor layer of the semiconductor layer sequence on a substrate;applying an etch stop layer on the first semiconductor layer;growing a further semiconductor layer on the layer sequence obtained after applying the etching step later;separating the semiconductor layer sequence from the substrate by at least partially removing a separating zone of the semiconductor layer sequence; andetching an obtained separating surface of the semiconductor layer sequence by use of an etchant, such that a microstructuring of the first semiconductor layer is effected and the microstructured outer surface is formed.17. The method according to claim 16 , wherein at least one layer of the semiconductor layer sequence comprises a material of the formula InAlGaN where 0≦x≦1 claim 16 , 0≦y≦1 and x+y≦1.18. The method according to claim 16 , wherein the first layer of the semiconductor layer sequence comprises InGaN where 0≦x≦1.19. The ...

DISPLAY DEVICE, ARRAY SUBSTRATE, AND THIN FILM TRANSISTOR THEREOF

A thin film transistor is provided. In this thin film transistor, the thickness of the gate is increased. Therefore, the source and drain of this thin film transistor can be disposed on the side wall of the gate to decrease the occupied area of the thin film transistor. An array substrate and a display device using the thin film transistor are also provided. 1. A thin film transistor , comprising:a gate disposed on a substrate, wherein the gate having a first lateral surface connecting the substrate;a gate insulating layer disposed on the gate;a semiconductor layer disposed on the gate insulating layer and covering the first lateral surface of the gate; anda source and a drain respectively disposed on the semiconductor layer, located at two opposite sides of the semiconductor layer, and disposed on the first lateral surface of the gate.2. The thin film transistor of claim 1 , wherein the source and the drain cover the first lateral surface of the gate claim 1 , and are on the same height relative to the substrate.3. The thin film transistor of claim 1 , wherein the source and the drain are disposed on two opposite ends of the first lateral surface claim 1 , and on different height relative to the substrate.4. The thin film transistor of claim 1 , wherein a thickness of the gate is about 0.1-5 μm.5. The thin film transistor of claim 1 , wherein an angle between the first lateral surface and a bottom surface of the gate is about 45°-90° claim 1 , and the bottom surface of the gate is adjacent to the substrate.6. The thin film transistor of claim 1 , wherein charge carrier mobility of the semiconductor layer is at least 5 cm/Vs.7. The thin film transistor of claim 1 , wherein a material of the semiconductor layer is metal oxide semiconductor material or polycrystalline silicon.8. The thin film transistor of claim 1 , wherein a thickness of the semiconductor layer is about 20-200 nm.9. The thin film transistor of claim 1 , wherein a thickness of the gate insulating ...

Display Device

Disclosed are a TFT array substrate for decreasing a bezel width and a display device including the same. The display device includes a first substrate including a display area (including a pixel formed in a pixel area defined by a gate line and a data line which intersect) and a non-display area that includes a built-in shift register connected to the gate line and a gate link part connected to the built-in shift register, a second substrate facing the first substrate, and a seal pattern formed in the non-display area of the first substrate in correspondence with an edge portion of the second substrate to facing-couple the first and second substrates. The seal pattern includes a first hardening area hardened by a first hardening process, and a second hardening area hardened by a second hardening process. 1. A display device , comprising:a first substrate comprising a display area, which comprises a pixel formed in a pixel area defined by a gate line and a data line which intersect, and a non-display area that comprises a built-in shift register connected to the gate line and a gate link part connected to the built-in shift register;a second substrate facing the first substrate; anda seal pattern formed in the non-display area of the first substrate in correspondence with an edge portion of the second substrate to facing-couple the first and second substrates,wherein the seal pattern comprises:a first hardening area hardened by a first hardening process to overlap a portion of the built-in shift register; anda second hardening area hardened by a second hardening process different from the first hardening process to overlap a portion of the built-in shift register.2. The display device of claim 1 , wherein the built-in shift register comprises a switching element formed in the first substrate to overlap the first hardening area claim 1 , the switching element comprising a plurality of openings which overlap the seal pattern.3. The display device of claim 2 , wherein ...

LIGHT-EMITTING DIODE MODULE WITH A FIRST COMPONENT AND A SECOND COMPONENT AND METHOD FOR THE PRODUCTION THEREOF

A light-emitting diode module has a first component and a second component, wherein the module exhibits a first operating mode and a second operating mode. The first component exhibits a first luminous flux. The second component exhibits a second luminous flux. In the first operating mode, the ratio of the first and second luminous fluxes is set such that the module emits mixed radiation with a color rendering index of 80 to 97. In the second operating mode, the ratio of the first and second luminous fluxes is set such that the module emits mixed radiation with a color rendering index of 55 to 70. 114-. (canceled)15. A light-emitting diode module comprising at least one first radiation-emitting component and one second radiation-emitting component and having , a first operating mode and a second operating mode , whereinthe first radiation-emitting component emits radiation of a first wavelength and exhibits a first luminous flux,the second radiation-emitting component emits radiation of a second wavelength different from the first wavelength and exhibits a second luminous flux,at least a ratio of the first luminous flux to the second luminous flux in the first operating mode is set such that the module emits mixed radiation with a color rendering index of 80 to 97,at least a ratio of the first luminous flux to the second luminous flux in the second operating mode is set such that the module emits mixed radiation with a color rendering index of 55 to 70,the first wavelength is in a red spectral range and the second wavelength is in a greenish-white spectral range,the lighting module is adapted for use in street lighting, tunnel lighting, indoor car park lighting and/or warehouse lighting, andthe lighting module comprises two operating modes.16. The light-emitting diode module according to claim 15 , wherein the wavelength of the mixed radiation in the first operating mode is in a cool or warm white spectral range and the wavelength of the mixed radiation in the ...

OLED DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME

An OLED display device is provided, which includes a first substrate, an OLED layer, a first blocking material, a second substrate, and a second blocking material. The first substrate has a first lateral surface, and the second substrate has a second lateral surface. The OLED layer is disposed between the first and second substrates. The first blocking material is disposed at a peripheral region of the OLED layer to connect the first and second substrates. The second blocking material is disposed on the first and second lateral surface and covers a gap between the first and second lateral surfaces. 1. An OLED display device , comprising:a first substrate, having a first lateral surface;a second substrate, having a second lateral surface;an OLED layer, disposed between the first substrate and the second substrate;a first blocking material, disposed at a peripheral region of the OLED player to connect the first substrate with the second substrate; anda second blocking material, disposed on the first and the second lateral surfaces and covering a gap formed between the first substrate and the second substrate.2. The OLED display device as claimed in claim 1 , wherein the first blocking material and the second blocking material are separated by a distance.3. The OLED display device as claimed in claim 1 , wherein a thickness of the second blocking material is in a range from 1 μm to 5 mm.4. The OLED display device as claimed in claim 1 , wherein the first substrate further has a first outer surface claim 1 , and the second substrate further has a second outer surface claim 1 , and a height of the second blocking material is less than a distance between the first outer surface and the second outer surface.5. The OLED display device as claimed in claim 1 , wherein the color of the light emitted from the OLED layer is white.6. The OLED display device as claimed in claim 1 , wherein the second substrate comprises a color filter.7. The OLED display device as claimed in claim ...

LIGHT EMITTING ELEMENT WITH A PLURALITY OF CELLS BONDED, METHOD OF MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE USING THE SAME

The present invention relates to a light emitting device, including a conductive substrate, vertical light emitting cells arranged on the conductive substrate, an insulating layer interposed between the conductive substrate and the vertical light emitting cells, and a wire electrically connecting the vertical light emitting cells. 1. A light emitting device , comprising:a conductive substrate;vertical light emitting cells arranged on the conductive substrate;an insulating layer arranged between the conductive substrate and the vertical light emitting cells; anda wire electrically connecting the vertical light emitting cells.2. The light emitting device of claim 1 , wherein the conductive substrate comprises silicon or a semiconductor.3. The light emitting device of claim 1 , wherein each of the vertical light emitting cells comprises a P-GaN layer claim 1 , an active layer claim 1 , and an N-GaN layer.4. The light emitting device of claim 1 , further comprising a first electrode pad arranged on each of the vertical light emitting cells.5. The light emitting device of claim 4 , wherein the vertical light emitting cells are electrically connected through the first electrode pads.6. The light emitting device of claim 4 , further comprising a second electrode pad claim 4 , the first electrode pad and the second electrode pad being arranged on an upper surface and a lower surface of the vertical light emitting cell claim 4 , respectively.7. The light emitting device of claim 6 , further comprising an insulation film arranged between adjacent second electrode pads claim 6 , the insulation film being arranged on the conductive substrate.8. The light emitting device of claim 1 , further comprising a terminal electrode arranged on one of the vertical light emitting cells located at an end region of the light emitting device.9. The light emitting device of claim 1 , wherein the wire comprises a bridge wiring.10. The light emitting device of claim 1 , wherein the wire ...

DISPLAY DEVICE

A display device in which various embodiments can prevent a vertically-striped blur is disclosed. In one aspect, the display device includes first gate lines, second gate lines, data lines, dummy data lines, and a plurality of pixels. The first and second gate lines are extended in a first direction. The data lines and the dummy data lines are extended in a second direction intersecting the first direction. The pixels are defined by the intersection of a first gate line of the first gate lines and a first data line of the data lines. 1. A display device comprising:a first gate line and a second gate line configured to extend in a first direction;a first data line, a second data line, configured to extend in a second direction, the first direction intersecting the second direction; anda pixel disposed at the intersections of the first gate line and the second gate line, and the first data line and the second data line, a first switching device connected to the first gate line, and the first data line;', 'a second switching device connected to the second gate line, and the second data line;', 'a dummy electrode bar configured to extend in the second direction, disposed between the first data line and the second data line;', 'a connection bar connecting the second data line and the dummy electrode bar, the connection bar is extended in the first direction;', 'a first pixel electrode connected to the first switching device, and interposed between the first data line and the dummy electrode bar; and', 'a second pixel electrode connected to the second switching device, separated from the first pixel electrode, interposed between the second data line and the dummy electrode bar., 'wherein the pixel includes2. The display device of claim 1 , wherein the connection bar is configured to overlap with one of the first gate line and the second gate line.3. The display device of claim 1 , wherein the dummy electrode bar is configured to have a length longer than a length of the ...

Optoelectronic Semiconductor Component

An optoelectronic semiconductor component includes a carrier which has an upper side and a lower side opposite to the upper side. At least one radiation-emitting semiconductor device is disposed on the upper side and has a radiation emission surface, through which at least a portion of the electromagnetic radiation, which is generated during operation of the semiconductor device, leaves the semiconductor device. A radiation-absorbing layer is arranged to absorb ambient light, which impinges upon the component, such that an outer surface of the component facing away from the carrier appears black at least in places. 115-. (canceled)16. An optoelectronic semiconductor component , comprising:a carrier having an upper side and a lower side opposite to the upper side;a radiation-emitting semiconductor device disposed on the upper side and having a radiation emission surface through which at least a portion of electromagnetic radiation, which is generated during operation of the semiconductor device, leaves the semiconductor device; anda radiation-absorbing layer arranged to absorb ambient light that impinges upon the component, such that an outer surface of the component facing away from the carrier appears black at least in places;wherein the radiation-absorbing layer completely encircles the radiation-emitting semiconductor device in a lateral direction and is in direct contact, at least in places, with lateral surfaces of the radiation-emitting semiconductor device; andwherein the radiation emission surface is free from the radiation-absorbing layer.17. The optoelectronic semiconductor component as claimed in claim 16 , wherein the outer surface of the semiconductor component is formed at least in places by an outer surface of the radiation-absorbing layer.18. The optoelectronic semiconductor component as claimed in claim 16 , wherein the radiation-absorbing layer comprises a filler which claim 16 , at least in places claim 16 , encases the lateral surfaces of the ...

LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE

Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a third semiconductor layer between the active layer and the second conductive semiconductor layer, and a light extraction structure on the second conductive semiconductor layer. A top surface of the third semiconductor layer has a Ga-face. 1. A light emitting device comprising:a first conductive semiconductor layer;an active layer on the first conductive semiconductor layer;a second conductive semiconductor layer on the active layer;a third semiconductor layer between the active layer and the second conductive semiconductor layer; anda light extraction structure on the second conductive semiconductor layer,wherein a top surface of the third semiconductor layer has a Ga-face.2. The light emitting device of claim 1 , wherein the third semiconductor layer includes dopants.3. The light emitting device of claim 1 , wherein dopants of the third semiconductor layer have a polarity identical to a polarity of dopants of the second conductive semiconductor layer.4. The light emitting device of claim 1 , wherein the third semiconductor layer has no dopants.5. The light emitting device of claim 1 , wherein the third semiconductor layer contacts the active layer.6. The light emitting device of claim 1 , further comprising a fourth conductive semiconductor layer between the active layer and the third semiconductor layer.7. The light emitting device of claim 6 , wherein dopants of the fourth conductive semiconductor layer have a polarity different from a polarity of dopants of the first conductive semiconductor layer and identical to a polarity of dopants of the second conductive semiconductor layer.8. The light emitting device of claim 6 , wherein concentration of dopants of the third semiconductor layer is less ...

MULTI-DIMENSIONAL SOLID STATE LIGHTING DEVICE ARRAY SYSTEM AND ASSOCIATED METHODS AND STRUCTURES

A multi-dimensional solid state lighting (SSL) device array system and method are disclosed. An SSL device includes a support, a pillar having several sloped facets mounted to the support, and a flexible substrate pressed against the pillar. The substrate can carry a plurality of solid state emitters (SSEs) facing in various directions corresponding to the sloped facets of the pillar. The flexible substrate can be a flat substrate prepared using planar mounting techniques, such as wirebonding techniques, before bending the substrate against the pillar. 1. A solid state light (SSL) device , comprising: individual sections include', 'a first side and a second side,', 'a first contact on a first side of the interface member,', 'a second contact on the first side of the interface member, and', 'a through-connect extending from the first side to the second side, the first through-connect being electrically coupled to the first contact; and, 'a flexible interface member having a central section and at least one outer section, wherein'}a plurality of solid state emitters (SSE), wherein at least one SSE is attached to each of the central section and outer section, and the individual SSEs are carried by the section and electrically connected to the first contact and to the second contact.2. The SSL device of claim 1 , further comprising a pillar having a central facet and at least one outer facet sloping away from the central facet claim 1 , wherein the central facet of the pillar contacts the second side of the interface member at the central section claim 1 , and wherein the outer facet contacts the second side of the interface member at the outer sections.3. The SSL device of wherein the central section is generally square and the pillar has four outer sections sloping at an acute angle relative to the central section.4. The SSL device of claim 1 , further comprising a reflective extension extending from individual outer sections claim 1 , wherein the reflective ...

LIGHT EMITTING DEVICE CHIP SCALE PACKAGE

The substrate that is used to support the growth of the LED structure is used to support the creation of a superstructure above the LED structure. The superstructure is preferably created as a series of layers, including conductive elements that forma conductive path from the LED structure to the top of the superstructure, as well as providing structural support to the light emitting device. The structure is subsequently inverted, such that the superstructure becomes the carrier substrate for the LED structure, and the original substrate is thinned or removed. The structure is created using materials that facilitate electrical conduction and insulation, as well as thermal conduction and dissipation. 1. A method of creating a light emitting device comprising:forming a light emitting structure on a substrate, the light emitting structure having a top surface opposite the substrate and including at least first and second electrodes that are accessible at the top surface,forming a first insulating layer above the electrodes, with at least first and second openings in the first insulating layer for contacting the at least first and second electrodes, respectively,forming non-removable insulating walls above the first insulating layer, the insulating walls configured to provide insulation between the at least first and second openings, andfilling at least a portion of spaces between the insulating walls with electrically conductive material, the electrically conductive material extending into the at least first and second openings to contact the at least first and second electrodes,wherein the insulating walls and electrical conductive material are configured to provide permanent structural support to the light emitting element, obviating a need for the substrate.2. The method of claim 1 , including removing some or all of the substrate.3. The method of claim 1 , including:forming a second insulating layer above the electrically conductive material, wherein the second ...

LIGHT-EMITTING DIODE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

A light-emitting diode (LED) structure includes an insulation substrate; LED chips each includes an epitaxial layer having a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer stacked on the insulation substrate, and comprises a mesa structure and an exposed portion of the first conductivity type semiconductor layer adjacent to each other, and a first isolation trench within the mesa structure; interconnection layers connect the LED chips; electrode pads respectively connected to exposed portions of the semiconductor layers; a reflective insulating layer covering the interconnection layers, the mesa structures and the electrode pads, and having penetration holes respectively exposing a portion of the electrode pads; and bonding pads located on a portion of the reflective insulating layer and connected to the electrode pads through the penetrating holes. A method of manufacturing the LED structure. 1. A light-emitting diode (LED) structure , comprising:an insulation substrate;a plurality of LED chips, wherein each of the LED chips comprises an epitaxial layer, the epitaxial layer comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially stacked on a surface of the insulation substrate, wherein each of the LED chips comprises a mesa structure and an exposed portion of the first conductivity type semiconductor layer adjacent to each other, wherein a first isolation trench is defined by two adjacent LED chips in a first direction, and wherein the first isolation trench is disposed in the mesa structure;a plurality of interconnection layers, connecting two adjacent LED chips of the LED chips, respectively;a first conductive type electrode pad and a second conductive type electrode pad, disposed on a first LED chip and a second LED chip of the LED chips, respectively, and electrically connected to the exposed portion of the first ...

DISPLAY DEVICE

In order to improve the transmissivity of each pixel and the brightness of a high-definition screen, a TFT and a projection are disposed in each pixel, a source electrode of the TFT extends so as to cover the projection, an inorganic passivation film is formed over the TFT and the projection, an organic passivation film is formed on the inorganic passivation film on the TFT, an opposed electrode is formed on the organic passivation film, an upper insulation film is formed over the opposed electrode, a pixel electrode is formed on the upper insulation film, and the pixel electrode is connected to the source electrode through a connection hole formed in the inorganic passivation film and the upper insulation film on the projection. Accordingly, the diameter of a through-hole can be made smaller. 1. A display device which is configured to include an array substrate and an opposed substrate which is faced the array substrate ,wherein a TFT and a projection are disposed in each pixel portion of the array substrate;a source electrode of the TFT extends so as to cover at least a part of the projection;an inorganic passivation film is formed over the TFT and the projection;an organic passivation film is formed on the inorganic passivation film on the TFT;an opposed electrode is formed on the organic passivation film;an upper insulation film is formed over the opposed electrode;a pixel electrode is formed on the upper insulation film; andthe pixel electrode is electrically connected to the source electrode through a connection hole formed in the inorganic passivation film and the upper insulation film on the projection.2. The display device according to claim 1 ,wherein the TFT and the projection are formed on a barrier film formed on a glass substrate;the TFT is configured in such a manner that a semiconductor layer is formed on the barrier film, a gate insulation film is formed over the semiconductor layer, a gate electrode is formed on the gate insulation film at a ...

THIN FILM TRANSISTOR ARRAY PANEL, LIQUID CRYSTAL DISPLAY, METHOD FOR REPAIRING THE SAME, COLOR FILTER ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME

A thin film transistor array panel includes: a substrate; a gate line and a storage electrode that are disposed on the substrate; a data line that crosses the gate line and storage electrode line; a thin film transistor that is connected with the gate line and data line; and a pixel electrode that is connected to the thin film transistor. The storage electrode includes a first storage electrode that is parallel to the gate line, second storage electrodes that extend on opposing sides of the data line from the first storage electrode, a connection part that crosses the data line and connects pairs of the second storage electrodes, and a connection bridge that crosses the gate line and connects a second storage electrode to a second storage electrode of an adjacent pixel. 1. A thin film transistor array panel , comprising:a substrate comprising pixel areas;gate lines extending along a first direction;data lines extending along a second direction;thin film transistors disposed in the pixel areas and connected to the gate lines and the data lines;pixel electrodes disposed in the pixel areas and connected to the thin film transistors; first storage electrodes extending along the gate lines;', 'second storage electrodes extending from the first storage electrodes and are paired along both sides of each data line;', 'connection parts extending across the data lines and directly connecting the pair of second storage electrodes; and', 'connection bridges extending across the gate lines and connecting the second storage electrodes of adjacent rows, and, 'wherein the storage electrodes comprisewherein the first storage electrodes are connected to the connection parts through the second storage electrodes.2. The thin film transistor array panel of claim 1 , wherein the first storage electrodes are not directly connected to the connection parts.3. The thin film transistor array panel of claim 1 , wherein the connection parts are not parallel with the gate lines.4. The thin film ...

SUBSTRATE FOR OPTICAL SEMICONDUCTOR APPARATUS, METHOD FOR MANUFACTURING THE SAME, OPTICAL SEMICONDUCTOR APPARATUS, AND METHOD FOR MANUFACTURING THE SAME

The present invention provides a substrate for an optical semiconductor apparatus for mounting optical semiconductor devices, the substrate comprising first leads to be electrically connected to first electrodes of the optical semiconductor devices and second leads to be electrically connected to second electrodes of the optical semiconductor devices, wherein the first leads and the second leads are arranged each in parallel, a molded body of a thermosetting resin composition is molded by injection molding in a penetrating gap between the first leads and the second leads such that the substrate is formed in a plate shape, and an exposed front surface and an exposed back surface of the first leads, the second leads and the resin molded body each tie in a same plane. The substrate exhibits excellent heat dissipation properties and enables manufacture of a thin optical semiconductor apparatus with a low cost. 1. A substrate for an optical semiconductor apparatus for mounting optical semiconductor devices , the substrate comprising first leads to be electrically connected to first electrodes of the optical semiconductor devices and second leads to be electrically connected to second electrodes of the optical semiconductor devices , whereinthe first leads and the second leads are arranged each in parallel, a molded body of a thermosetting resin composition is molded by injection molding in a penetrating gap between the first leads and the second leads such that the substrate is formed in a plate shape, and an exposed front surface and an exposed back surface of the first leads, the second leads and the resin molded body each tie in a same plane.2. The substrate for an optical semiconductor apparatus according to claim 1 , wherein metal plating is applied onto surfaces of the first leads and the second leads.3. The substrate for an optical semiconductor apparatus according to claim 1 , wherein the first leads and the second leads each have a step claim 1 , a taper portion ...

High voltage light emitting diode and fabricating method thereof

A method for fabricating a high voltage light emitting diode (HV LED) includes: calculating a total area of the HV LED according to a predetermined light emission luminance; calculating the number of sub-LEDs according to a predetermined operating voltage; subtracting, from the total area, areas of isolation trenches between the sub-LEDs, electrode areas and areas of series-connected conductive leads between the sub-LEDs, and then dividing the difference obtained through the subtraction by the number of the sub-LEDs, so as to calculate an effective light emission area of each of the sub-LEDs; and according to the effective light emission area, adjusting the area of a sub-LED having an electrode and the area of a sub-LED having no electrode, so as to enable the area of the sub-LED having an electrode to be greater than the area of the sub-LED having no electrode. An HV LED manufactured by the above method.

DISPLAY DEVICE AND METHOD FOR FABRICATING SAME

In a display region of an active matrix substrate, an interlayer insulating film made of a photosensitive organic insulating film, an insulating film different from the interlayer insulating film, and a plurality of pixel electrodes formed on a surface of the interlayer insulating film are provided. In a non-display region of the active matrix substrate, a lead line extended from the display region is formed. In a formation region for a sealing member, the interlayer insulating film is removed, the insulating film is provided to cover part of the lead line, and the sealing member is formed directly on a surface of the insulating film. 116-. (canceled)17. A method for fabricating a display device by bonding an active matrix substrate to a counter substrate via a frame-like sealing member , the method comprising:forming a first conductive film having a predetermined pattern on a substrate by using a first mask;forming a first insulating film covering the first conductive film on the substrate;forming a semiconductor layer having a predetermined pattern on the first insulating film by using a second mask;forming a second conductive film having a predetermined pattern on the first insulating film by using a third mask;forming an interlayer insulating film made of a photosensitive organic insulating film having a predetermined pattern by using a fourth mask to cover part of the first insulating film on which the semiconductor layer and the second conductive film have been formed;etching part of the first insulating film by using the interlayer insulating film as a mask; in the forming the first conductive film, part of the first conductive film is formed in a region in which the sealing member is to be formed,', 'in the forming the semiconductor layer, part of the semiconductor layer is formed in the region in which the sealing member is to be formed,', 'in the forming the interlayer insulating film, the interlayer insulating film on the semiconductor layer is removed in ...

THIN FILM TRANSISTOR ARRAY PANEL HAVING IMPROVED APERTURE RATIO AND METHOD OF MANUFACTURING SAME

A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a substrate; a gate line positioned on the substrate; a gate insulating layer positioned on the gate line; a semiconductor layer positioned on the gate insulating layer and having a channel portion; a data line including a source electrode and a drain electrode, the source and drain electrodes both positioned on the semiconductor layer; a passivation layer positioned on the data line and the drain electrode and having a contact hole formed therein; and a pixel electrode positioned on the passivation layer, wherein the pixel electrode contacts the drain electrode within the contact hole, and the channel portion of the semiconductor layer and the contact hole both overlap the gate line in a plan view of the substrate. 1. A thin film transistor array panel comprising:a substrate;a gate line positioned on the substrate;a gate insulating layer positioned on the gate line;a semiconductor layer positioned on the gate insulating layer and having a channel portion;a data line including a source electrode and a drain electrode, the source and drain electrodes both positioned on the semiconductor layer;a passivation layer positioned on the data line and the drain electrode, and having a contact hole formed therein; anda pixel electrode positioned on the passivation layer;wherein the pixel electrode is connected to the drain electrode through the contact hole; andthe channel portion of the semiconductor layer and the contact hole both overlap the gate line in a plan view of the substrate.2. The thin film transistor array panel of claim 1 , whereinthe gate line includes a gate electrode protruding from the gate line.3. The thin film transistor array panel of claim 2 , wherein:the source electrode overlaps the gate line in a plan view of the substrate.4. The thin film transistor array panel of claim 3 , wherein:the drain electrode overlaps the gate line in a plan view of the ...

SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more. 1. A method for manufacturing a semiconductor light emitting device , comprising:forming a first base layer including a nitride semiconductor including In on an n-type semiconductor layer;forming a first cap layer on a portion of the first base layer;reducing an In content in a portion of the first base layer not covered by the first cap layer to transform the portion of the first base layer not covered by the first cap layer into a first non-well layer to form a first light emitting layer including the first non-well region and a first well region derived from a portion of the first base layer covered by the first cap layer;forming a first barrier layer on the first light emitting layer and on the first cap layer; andforming a p-type semiconductor layer on the first barrier layer.2. The method according to claim 1 , further comprising after the forming the first barrier layer and prior to the forming p-type semiconductor layer:forming on the first barrier layer a second base layer including a nitride semiconductor including In with an In composition ratio same as an In composition of the first base layer;forming a second cap layer on a portion of the second base layer;forming a second cap layer on a portion of the second base layer;reducing an In ...

LED LAMPS WITH IMPROVED QUALITY OF LIGHT

LED lamps having improved light quality are disclosed. The lamps emit more than 500 lm and more than 2% of the power in the spectral power distribution is emitted within a wavelength range from about 390 nm to about 430 nm. 1. An LED lamp comprising an LED device , wherein the LED lamp is characterized by a luminous flux of more than 500 lm , and a spectral power distribution (SPD) in which more than 2% of the power is emitted within a wavelength range from about 390 nm to about 430 nm.2. The lamp of claim 1 , wherein the luminous flux is at least 1500 lm.3. The lamp of claim 1 , wherein the lamp comprises an MR16 form factor.4. The lamp of claim 1 , wherein the lamp comprises a PAR30 lamp form factor.5. The lamp of claim 1 , wherein the LED device comprises at least one violet-emitting LED.6. The lamp of claim 5 , wherein the at least one violet-emitting LED is configured to emit more than 200W/cmat a current density of 200 A/cmat a junction temperature of 100° C. or greater.7. The lamp of claim 5 , wherein the at least one violet-emitting LED pumps at least a blue phosphor or at least one cyan phosphor.8. The lamp of claim 5 , wherein the LED device comprises at least one LED configured to emit at a wavelength other than a wavelength emitted by the at least one violet-emitting LED.9. The lamp of claim 1 , wherein a short wavelength SPD discrepancy (SWSD) for a source with a correlated color temperature (CCT) in a range 2500K to 7000K is less than 35%.10. The lamp of claim 1 , wherein a violet leak of the light source is configured to achieve a particular CIE whiteness value.11. The lamp of claim 10 , wherein the violet leak is such that a CIE whiteness of a high-whiteness reference sample illuminated by the lamp is within minus 20 points and plus 40 points of a CIE whiteness of the same sample under illumination by a CIE reference illuminant of same CCT (respectively a blackbody radiator if CCT<5000K or a D illuminant if CCT>5000K).12. The lamp of claim 10 , ...

WHITE NANOLED WITHOUT REQUIRING COLOR CONVERSION

A nano-LED containing an array of nano-pillars of different diameters that are distributed over an emission area of an LED chip is capable of emitting broadband and white or nearly white light. Since each pillar emits light at a different wavelength according to its diameter and strain state, the overall emission spectral characteristics of the device is a combination of individual spectrum, giving rise to broadband emission. The spectral shape can be tailored for different shades of white emission, by controlling the distribution of the different diameter nano-pillars. The nano-pillars are patterned by nanosphere lithography. 1. A semiconductor light-emitting diode , comprising:a light-emitting region, wherein the light-emitting region comprises an array of non-uniformly-sized nano-pillars formed using a top-down approach.2. The semiconductor light-emitting diode according to claim 1 , wherein the non-uniformly-sized nano-pillars are patterned by nanosphere lithography using a colloidal solution containing nanospheres of different diameters.3. The semiconductor light-emitting diode according to claim 2 , wherein the nanospheres comprise at least one etch resistant material selected from the group consisting of silica and alumina.4. The semiconductor light-emitting diode according to claim 2 , wherein the nanosphere colloidal solution is dispersed onto the surface of an LED wafer or chip into a monolayer.5. The semiconductor light-emitting diode according to claim 4 , wherein the monolayer of nanospheres is dispersed using at least one technique selected from the group consisting of: spin-coating claim 4 , vertical deposition claim 4 , and jet-printing.6. The semiconductor light-emitting diode according to claim 1 , wherein the non-uniformly-sized nano-pillars are patterned by electron beam lithography claim 1 , ion beam lithography claim 1 , optical lithography claim 1 , or nanoimprint lithography.7. The semiconductor light-emitting diode according to claim 1 , ...

SEMICONDUCTOR LIGHT EMITTING DEVICE

A semiconductor light emitting device includes first and second conductivity-type semiconductor layers formed of AlGaInP (0≦x≦1, 0≦y≦1, 0≦x+y≦1) or AlGaAs (0≦z≦1) and an active layer interposed between the first and second conductivity-type semiconductor layers, wherein at least one of the first and second conductivity-type semiconductor layers includes a low refractive index surface layer formed of (AlGa)InP (0.7≦v≦1) or AlInP (0≦w≦1) and having depressions and protrusions. 1. A semiconductor light emitting device comprising:{'sub': x', 'y', '1-x-y', 'z', '1-z, 'first and second conductivity-type semiconductor layers formed of AlGaInP(0≦x≦1, 0≦y≦1, 0≦x+y≦1) or AlGaAs (0≦z≦1); and'}an active layer interposed between the first and second conductivity-type semiconductor layers,{'sub': v', '1-v', '0.5', '0.5', 'w', '1-w, 'wherein at least one of the first and second conductivity-type semiconductor layers includes a low refractive index surface layer formed of (AlGa)InP (0.7≦v≦1) or AlInP (0≦w≦1) and having depressions and protrusions.'}2. The semiconductor light emitting device of claim 1 , wherein the low refractive index surface layer has a composition of AlInP(0.3≦w≦1).3. The semiconductor light emitting device of claim 1 , further comprising an intermediate layer interposed between the low refractive index surface layer and the active layer claim 1 , the intermediate layer having a refractive index greater than that of the low refractive index surface layer.4. The semiconductor light emitting device of claim 3 , wherein the intermediate layer has a composition of AlInP (0≦u≦v claim 3 , w).5. The semiconductor light emitting device of claim 3 , wherein the intermediate layer has a composition of AlGaInP (0≦m≦1 claim 3 , 0≦n≦1).6. The semiconductor light emitting device of claim 1 , further comprising a plurality of intermediate layers interposed between the low refractive index surface layer and the active layer claim 1 , wherein the plurality of intermediate layers ...

Series Connected Segmented LED

A light source and method for making the same are disclosed. The light source includes a conducting substrate, and a light emitting structure that is divided into segments. The light emitting structure includes a first layer of semiconductor material of a first conductivity type deposited on the substrate, an active layer overlying the first layer, and a second layer of semiconductor material of an opposite conductivity type from the first conductivity type overlying the active layer. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first layer in the first segment to the second layer in the second segment. A power contact is electrically connected to the second layer in the first segment, and a second power contact electrically connected to the first layer in the second segment. 116-. (canceled)17. A light emitting device comprising:a substrate;a light emitting structure formed on the substrate and comprising:a first semiconductor layer of a first conductivity type formed on the substrate;an active layer on the first semiconductor layer; anda second semiconductor layer of an opposite conductivity type from the first conductivity type formed on the active layer;a trench that divides the light emitting structure into first and second segments that are electrically isolated from one another;a mirror in electrical contact with the first semiconductor layer in each of the first and second segments;a barrier layer formed adjacent to the mirror and between the mirror and the substrate in each of the first and second segment, an upper surface of the barrier layer and a lower surface of the first semiconductor layer being positioned in a substantially same plane, the upper surface of the barrier layer partially exposed by the trench; anda connection electrode contacting the upper surface of the barrier layer in the first segment exposed by the trench and ...

LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

The present application relates to a light-emitting device and method of manufacturing the same. The device includes a lower portion, and vertical light-emitting structures disposed on the lower portion. A conductive member partially surrounds the vertical light-emitting structures, and reflective members are disposed between the vertical light-emitting structures. The reflective members reflect light that is emitted in a lateral direction from the vertical light-emitting structures to minimize the number of times that light emitted in a lateral direction from the vertical light-emitting structure is transmitted through the light-absorbing member, thereby increasing a luminous efficiency. 1. A light-emitting device comprising:a lower portion;a plurality of vertical light-emitting structures disposed on the lower portion;a conductive member partially surrounding the plurality of vertical light-emitting structures; anda plurality of reflective members disposed between the plurality of vertical light-emitting structures and reflect light that is emitted in a lateral direction from the plurality of vertical light-emitting structures.2. The light-emitting device of claim 1 , wherein each of the plurality of vertical light-emitting structures has a core-shell structure.3. The light-emitting device of claim 2 , wherein: a first conductive type semiconductor,', 'an active layer, and', 'a second conductive type semiconductor,, 'each of the plurality of vertical light-emitting structures comprisesthe first conductive type semiconductor is a core portion, andthe active layer and the second conductive type semiconductor are a shell portion.4. The light-emitting device of claim 1 , wherein each of the plurality of vertical light-emitting structures has any one shape selected from: nanorod claim 1 , nanowire claim 1 , or nanopyramid shape.5. The light-emitting device of claim 1 , wherein the conductive member comprises: any one of indium tin oxide (ITO) claim 1 , ZnO claim 1 , ...

DUAL MODE DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

A dual mode display apparatus according to the inventive concept includes a lower substrate, a first lower electrode on the lower substrate, a light switching layer on the first lower electrode, a first upper electrode on the light switching layer, a passivation layer on the first upper electrode, a contact plug connected to the first upper electrode and penetrating the passivation layer, a second lower electrode on the contact plug and the passivation layer, an organic light-emitting layer on the second lower electrode, a second upper electrode on the organic light-emitting layer, and an upper substrate on the second upper electrode. 1. A dual mode display apparatus comprising:a lower substrate;a first lower electrode on the lower substrate;a light switching layer on the first lower electrode;a first upper electrode on the light switching layer;a passivation layer on the first upper electrode;a contact plug connected to the first upper electrode, the contact plug penetrating the passivation layer;a second lower electrode on the contact plug and the passivation layer;an organic light-emitting layer on the second lower electrode;a second upper electrode on the organic light-emitting layer; andan upper substrate on the second upper electrode.2. The dual mode display apparatus of claim 1 , further comprising:an etch stop layer disposed between the first upper electrode and the light switching layer.3. The dual mode display apparatus of claim 2 , further comprising:an adhesive layer disposed between the etch stop layer and the light switching layer.4. The dual mode display apparatus of claim 3 , wherein the adhesive layer includes a polymer film.5. The dual mode display apparatus of claim 1 , wherein the light switching layer includes a photonic crystal layer.6. The dual mode display apparatus of claim 5 , wherein the light switching layer further includes a liquid crystal layer.7. The dual mode display apparatus of claim 1 , further comprising:a thin film transistor ...

MONOLITHIC SEMICONDUCTOR LIGHT EMITTING DEVICES AND METHODS OF MAKING THE SAME

A monolithic semiconductor light emitting device is described. The device includes an n-type region, a p-type region, an active region of a multiple quantum well structure comprising a plurality of alternating barrier and active layers interposed between the n-type region and the p-type region. The device emits multiple single-wavelength spectral distributions of ultraviolet light each having a peak wavelength of between 210 nm and 400 nm and/or a broadband spectral output having a wavelength of between 210 nm and 400 nm. Methods of making the device and lamps comprising the device are also described. 1. A monolithic semiconductor light emitting device comprising:an n-type cladding layer;an electrode on the n-type cladding layer;a p-type cladding layer;an electrode on the p-type cladding layer; and{'i': 'd', 'an active region of a multiple quantum well structure comprising a plurality of barrier layers and a plurality of active layers alternately laminate, wherein the active region is interposed between the n-type cladding layer and the p-type cladding layer;'}wherein the device emits multiple single-wavelength spectral distributions of ultraviolet light each having a peak wavelength of between 210 nm and 400 nm and/or a broadband spectral output having a wavelength of between 210 nm and 400 nm.2. The monolithic semiconductor light emitting device of claim 1 , wherein:each of the active layers comprises at least one of indium aluminum gallium nitride, indium aluminum nitride, indium gallium nitride, indium nitride, aluminum gallium nitride, gallium nitride, and aluminum nitride; and/orwherein each of the barrier layers comprises at least one of indium aluminum gallium nitride, indium aluminum nitride, indium gallium nitride, indium nitride, aluminum gallium nitride, gallium nitride, and aluminum nitride.3. The monolithic semiconductor light emitting device of claim 1 , wherein a first active layer emits light having a first spectral distribution and having a first ...

Organic Light Emitting Display Device and Method for Manufacturing the Same

The present invention has been made in an effort to provide an organic light emitting display device comprising: a substrate; and subpixels formed on the substrate, each of the subpixels comprising an emission layer consisting of a first host layer made of a first host material, a mixed layer made of the first host material, a dopant material, and a second material, and a second host layer made of the second host material. 1. An organic light emitting display device comprising:a substrate; anda plurality of subpixels formed on the substrate,each of the subpixels comprising an emission layer comprising a first host layer made of a first host material, a mixed layer made of the first host material, a dopant material, and a second host material, and a second host layer made of the second host material,wherein the first host material and the second host material are different from each other, andwherein at least some light emission occurs in the mixed layer.2. The organic light emitting display device of claim 1 , wherein one of the first and second host materials is a hole-type material claim 1 , and the other one is an electron-type material.3. The organic light emitting display device of claim 1 , wherein the electrodes positioned under and above the emission layer are equal in thickness among the subpixels.4. The organic light emitting display device of claim 1 , wherein the emission layer differs in thickness among the subpixels.5. The organic light emitting display device of claim 1 , wherein each of the subpixels additionally comprises one or more functional layers comprising at least one from the group consisting of: a hole injection layer claim 1 , a hole transport layer claim 1 , an electron blocking layer claim 1 , a hole blocking layer claim 1 , an electron transport layer claim 1 , and an electron injection layer.6. The organic light emitting display device of claim 5 , wherein no light emission occurs in any of the functional layers.7. The organic light ...