ВАКУУМНО-ДУГОВОЙ ИСТОЧНИК ПЛАЗМЫ

Изобретение относится к вакуумно-дуговому источнику плазмы и может найти применение для нанесения различного рода металлических покрытий на поверхность изделий. Источник содержит испаряемый металлический катод (2), анод (1), в качестве которого используется корпус, устройство поджига разряда и токоподвод, соединяющий источник электропитания разряда с катодом (2) со стороны, противоположной его рабочей поверхности. Токоподвод является средством стабилизации катодного пятна на рабочей поверхности катода и выполнен в виде проводника (10) в форме пространственной винтовой линии с углом подъема витков, не превышающим 20°. Устройство поджига разряда включает в свой состав поджигающий электрод (9). В состав устройства входит дополнительное средство стабилизации катодного пятна в виде электромагнитной катушки (11) или кольцевого электростатического экрана, установленного соосно катоду. На корпусе устройства установлена фокусирующая электромагнитная катушка (12). Катод (2) и токопровод снабжены ...

ПЛАЗМЕННЫЙ РЕАКТОР ПОСТОЯННОГО ТОКА

Изобретение относится к электротехнике, а именно к устройствам преобразования электрической энергии в тепловую с помощью электродугового разряда и может быть использовано для производства плавленных огнеупорных материалов, а также в металлургии. Достигаемый технический результат заключается в повышении производительности реактора за счет повышения устойчивости горения электродугового разряда. Для этого выводы обмоток управления 8 подключены к вторичным обмоткам трансформатора 10 через тиристорный управляемый выпрямитель 11. В этом случае магнитный поток управления направлен только в одну сторону встречно поперечному магнитному полю сериесных обмоток 7. При этом управляющие электроды тиристоров выпрямителя 11 соединены с выходом синхронного импульсно-фазового устройства 12, вход которого через управляющий орган 13, содержащий задатчик напряжения и переходное устройство 14, подключен к клеммам электродов 2 реактора. В качестве управляющих обмоток 8 может быть использована часть витков сериесных ...

ПЛАЗМЕННЫЙ ИСТОЧНИК СВЕТОВОГО ИЗЛУЧЕНИЯ

Полезная модель относится к плазменной технике, в частности к устройствам с управляемой плазмой, и может быть использована для решения широкого круга технических задач при испытаниях материалов, приборов, образцов техники на устойчивость к воздействию светового излучения природных и техногенных факторов, в фотохимии и в световых технологиях обработки материалов.Предложен мощный и надежный плазменный источник светового излучения, способный работать как в квазинепрерывном режиме, так и в режиме формирования относительно коротких импульсов со сложной временной формой и с крутыми фронтами, обеспечивающий стабильность формирования заданных временных форм при высокой интенсивности светового излучения в течение всего времени жизни узлов формирования стабилизированного дугового газового разряда.Такой технический эффект достигается тем, что в плазменном источнике светового излучения, включающем управляемый источник питания, выход которого через разделительный диод соединен со входом узла формирования ...

ВАКУУМНО-ДУГОВОЙ ИСТОЧНИК ПЛАЗМЫ

Использование: вакуумно-плазменная технология, для нанесения покрытий на длинномерные изделия как в электронной технике, так и в производстве изделий массового потребления. Сущность изобретения: вакуумно-дуговой источник плазмы, содержащий протяженный катод с дугогасящим экраном, расположенным со стороны токоподвода к катоду, поджигающий электрод и анод, снабжен протяженной магнитной системой, ориентированной вдоль катода. Магнитная система может быть выполнена в виде петлевой обмотки или в виде постоянных магнитов. Составляющие вектора индукции магнитного поля по длине рабочей зоны катода лежат в плоскости, перпендикулярной его оси симметрии, что позволяет обеспечить равномерность толщины формируемого покрытия на длинномерные изделия и повысить коэффициент использования плазмообразующего материала. 2 з. п. ф-лы, 3 ил.

СПОСОБ УПРАВЛЕНИЯ ПЛАЗМЕННЫМ ПОТОКОМ И ПЛАЗМЕННОЕ УСТРОЙСТВО

Использование: в электронной промышленности, в машиностроении, приборостроении и других областях промышленности, где используется плазменная обработка поверхностей изделий. Сущность изобретения: для получения плазменного потока с заданными характеристиками на каждую из плазменных струй, образующих плазменный поток, воздействуют магнитным полем, составляющая вектора магнитной индукции которого перпендикулярна направлению истечения соответствующей струи. Помимо магнитного поля, воздействие можно осуществлять изменением энергии, вложенной в плазменный поток, расхода плазмообразующего газа в каждой из струй или изменением его состава. В результате появляется возможность управления, воспроизведения и поддержания постоянными во времени таких параметров плазменного потока, как распределение яркости и температуры, распределение спектрального коэффициента излучения плазмы и распределение концентрации ионов в плазменном потоке. Устройство для осуществления способа содержит две или более плазменные ...

СВЧ-плазмотрон и способ генерации плазмы

Изобретение относится к средствам генерирования плазмы СВЧ-разряда. Ввод СВЧ-энергии осуществляется в металлическую разрядную камеру через продольную вдоль оси камеры щель из присоединяемой к этой щели металлической трубы-волновода, располагаемой вдоль оси разрядной камеры. Через эту же щель вводится вращающийся вокруг оси разрядной камеры поток газа, закрученный внутри трубы-волновода. Для предотвращения образования зоны рециркуляции газа в осевой зоне внутри трубы-волновода располагают дополнительную металлическую трубу меньшего диаметра. Между трубой меньшего диаметра и внешней трубой-волноводом вводится вращающийся поток газа, далее по образованному таким образом коаксиальному волноводу вводится СВЧ-энергия на электромагнитной волне типа НИ, которая возбуждается в коаксиальном волноводе, через окно во внешней трубе коаксиального волновода в зоне, удаленной от щели ввода, в разрядную камеру. Причем обеспечивается удаление герметизирующего диэлектрического окна ввода СВЧ-энергии в зону ...

СПОСОБ ПОЛУЧЕНИЯ ПЛАЗМЕННОГО ИСТОЧНИКА СВЕТОВОГО ИЗЛУЧЕНИЯ И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ

Изобретение относится к плазменной технике, в частности к способам и устройствам с излучающей плазмой, и может быть использовано для решения широкого круга технических задач, например при испытаниях приборов и материалов на устойчивость к облучению световым излучением, аналогичным излучению природных и техногенных факторов. Технический результат - расширение функциональных возможностей, обеспечение получения мощных световых излучений, аналогичных по временной форме техногенным и природным световым излучениям, при сохранении высокой надежности их функционирования. В способе получения плазменного источника светового излучения на основе магнитоприжатого дугового разряда эрозионного типа путем формирования в межэлектродном промежутке после установления в нем заданного значения величины магнитного поля непрерывного и импульсного разрядов с временным интервалом между ними новым является то, что при заданном значении величины магнитного поля определяют минимальное напряжение горения дугового разряда ...

Вакуумное дуговое устройство

Вакуумное дуговое устройство, содержащее протяженный цилиндрический катод с симметрично расположенными на нем электростатическими экранами, снабженный с торцов токовыми вводами, подключенными к электрической схеме включения ограничительных сопротивлений и к источнику питания, поджигающий электрод и анод, отличающееся тем, что электростатические экраны, установлены у токовых вводов по срезу катода, за которыми расположены магнитные системы, формирующие аксиально-симметричное встречное магнитное поле, а электрическая схема снабжена коммутирующим устройством подключения раздельных источников питания к управляющему сопротивлению.

УСТРОЙСТВО ДЛЯ СОЗДАНИЯ ПЛАЗМЕННОГО ПОТОКА

Использование :в плазменной технике и может быть использовано при термической обработке и плазмохимической обработке. Устройство для создания плазменного потока включает электродные узлы в количестве, кратном двум, симметрично расположенные с углом, меньшим 45° к оси симметрии устройства, магнитную систему, выполненную в виде разомкнутых магнитопроводов по количеству электродных узлов и соленоиды. Каждый разомкнутый магнитопровод имеет ферромагнитный отвод, расположенный между соленоидами, при этом каждый разомкнутый магнитопровод расположен между двумя плоскостями, параллельными оси симметрии устройства и совпадающими с осями двух соседних электродных узлов. Полюса и ферромагнитные отводы размещены в пространстве между двумя плоскостями, перпендикулярными оси электродного узла, что обеспечивает действие на плазменную струю вне электродного узла. Размещение полюсов разомкнутого магнитопровода со стороны тупого угла между осью электродного узла и осью симметрии устройства обеспечивает достижение ...

ВАКУУМНО-ДУГОВОЙ ИСТОЧНИК ПЛАЗМЫ

Изобретение относится к области вакуумно-плазменной технологии и может быть применено для нанесения покрытий на длинномерные изделия как в электронной технике, так и в производстве изделий массового потребления. Задача, решаемая изобретением, заключается в создании протяженного вакуумно-дугового источника плазмы с управляемым характером движения КП по поверхности катода. Данное усовершенствование позволяет обеспечить равномерность толщины формируемого покрытия на длинномерные изделия и повысить коэффициент использования плазмообразующего материала. Сущность изобретения заключается в том, что вакуумно-дуговой источник плазмы, содержащий протяженный катод с дугогасящим экраном расположенным со стороны токоподвода к катоду, поджигающий электрод и анод, дополнительно снабжен протяженной магнитной системой, установленной с противоположной стороны относительно генерируемого потока плазмы и ориентированной вдоль катода. Протяженность магнитной системы должна превышать длину рабочей зоны катода ...

VORRICHTUNG ZUM BESCHICHTEN VON SUBSTRATEN

Vorrichtung zum Beschichten von Substraten.

Arrangement for generating ions by generating a plasma esp. for coating substrates

The arrangement has a plasma source cathode (8) with a plasma generating arrangement (7). It also has an arrangement for generating a magnetic field for bundling the plasma. The arrangement has a target element (3) and a reservoir (4) for containing a material supply (5). The arrangement also has means for generating a positive electric potential on a free surface of the reservoir. The plasma generator, the magnetic field generator (10), the target element and the reservoir are arranged such that in use the plasma bundle extends from the source cathode to the target element. The free surface of the reservoir between the cathode and the target element is arranged such that the target element is not in a dominant movement direction of the evaporated non-ionized material atoms.

EVAPORATION ARC STABILIZATION FOR NON-PERMEABLE TARGETS

Improvements in or relating to apparatus for producing a jet consisting of a plasma of ions and electrons

... 897,577. Jet-propulsion plant. BRISTOL SIDDELEY ENGINES Ltd. June 27, 1960 [July 15, 1959], No. 24273/59. Class 110 (3). [Also in Groups XI and XL (a)] A "pulsed-electro ram-jet " for propulsion in space comprises a particle separator and accelerator 18 (see Group XL (a)) through which positive ions and electrons from concentrated ionization regions in space are introduced into a chamber 11 containing a cooled anode 12 and cathode 13 between which an arc is maintained by a constant potential to increase the energy of the particles. A coil 23 is supplied with a pulsed current so phased as to accelerate successive groups of particles which leave the jet nozzle at high velocity and produce useful thrust. In an alternative arrangement (Fig. 1, see Group XI), the chamber 11 is closed at the rear end and a gaseous or liquid working fluid, e.g. the products of combustion from a rocket combustion chamber, is introduced tangentially. The coolant may be liquid metal, e.g. sodium, potassium or mercury ...

PLASMA GENERATOR

PROCEDURE AND DEVICE FOR THE IMPROVEMENT OF A COATING APPARATUS WITH PLASMA ACCELERATOR FOR DIAMOND COATING

REACTOR WITH ELECTRICAL SHEET.

Apparatus for treating metal surfaces with a magnetically impelled arc

METHOD AND MEANS FOR USE IN THE INSTALLATION OF PLASMA GENERATORS IN SHAFT FURNACES

TITLE: "A METHOD AND MEANS FOR USE IN THE INSTALLATION OF PLASMA GENERATORS IN SHAFT FURNACES" The invention relates to a method and a means for faciliting the replacement of plasma generators and for minimizing the heat losses during installation of a plasma generator in a shaft furnace, particularly for plasma generators of the type comprising cylindrical electrodes between which an electric arc is generated, the bases of the arc being caused to rotate by means of electric field coils arranged around said electrodes. To achieve this at least the field coil (7) surrounding the electrode nearest to the nose (12) of the plasma generator, together with its connections for coolant and electricity, is permanently secured in the wall (1) of the shaft furnace in conjunction with the opening (6) for insertion of the plasma generator (11) into the shaft furnace.

FIELD COIL

ELECTRIC ARC REACTOR

... "ELECTRIC ARC REACTOR" An electric arc reactor having a substantially straight feed material passage extending through both the anode and the cathode. Gas is fed into the gap between the two electrodes so as to swirl about the axis of the feed passage and thereby confine the lateral extent of the arc and also confine the location at which the upstream arc root attaches to the upstream electrode. An enlargement of the passage in the gap end of the upstream electrode provides an internal sloping root attachment surface. A similar enlargement may be provided in the downstream electrode, but spaced from the gap, if the downstream electrode forms the cathode. Gas flow in a direction towards the upstream end of the feed passage is used to control the location at which an arc root attaches to the sloping surface of a passage enlargement. Magnetic means is provided to induce rotation of the arc such as to form a hollow arc column which is coaxial with the feed passage and through which feed material ...

Verfahren zur Herstellung eines Acylthio-hydroxy-steroids

Plasmabrenner

Vorrichtung zur Erzeugung eines Plasmas und Verfahren zum Betrieb dieser Vorrichtung

Plasmabrenner und Verwendung dieses Plasmabrenners zur Durchführung chemischer Reaktionen

SOURCE OF ARC PLASMA AND ARC PLANT WITH SUCH A SOURCE OF ARC PLASMA FOR THE PLASMA TREATMENT OF THE SURFACE OF WORKPIECES.

PLASMA ARC MECHANISM FOR LAYING ON COATS.

VACUUM ARC PLASMA DEVICE.

INTO A SHAFT KILN APPLICABLE ONE PLASMA GENERATOR DEVICE.

Plasma chemical arc reactor esp. for olefin and hydrogen prodn. - has revolving arc to generate reaction uniformly across gas stream

GAS GENERATOR IONIZES VERY HAS HIGH PRESSURE AND VERY HIGH TEMPERATURE

PROCESS IMPROVES AND APPARATUS FOR STABILIZATION Of an ARC OF PULVERIZATION OF NONPERMEABLE TARGETS USING a PERMEABLE SNAP RING

APPARATUS AND METHOD OF INCREASING ARC VOLTAGE AND GAS ENTHALPY IN A SELF-STABILIZING ARC HEATER

PROCESS AND DEVICE TO SEPARATE FROM THE GAS PARTICLES OF DIFFERENT MASSES BY CENTRIFUGAL FORCES

MAGNETIC CONFINEMENT HEATING DEVICE FOR SELECTIVE ADDITIVE MANUFACTURING APPARATUS

The invention relates to a device for heating a powder bed in an additive manufacturing apparatus, characterized in that it includes: - a plasma generation device (20), said device being designed to be arranged and moved above the powder bed, at a distance from the powder bed that makes it possible to generate plasma thereon, - a unit for supplying electric power (22) to said plasma generation device, - a control unit (9) for controlling the supply of power to and movement of the plasma generation device, and in that the plasma generation device (20) includes an assembly for magnetically confining the plasma.

Apparatus and method for generating nitric oxide in controlled and accurate amounts

A nitric oxide generator generates nitric oxide from a mixture of nitrogen and oxygen such as air treated by a pulsating electrical discharge. The desired concentration of nitric oxide is obtained by controlling at least one of a frequency of the pulsating electrical discharge and duration of each electrical discharge pulse.

CERAMIC COATING DEPOSITION

A ceramic material is applied to a part. The part is placed in a deposition chamber and a first electric potential is applied to the part. Components are evaporated for forming the material. The evaporated components are ionized. The first electric potential is modulated so as to draw the ionized component to the part. The modulation comprises maintaining at least an ion current density in a range of 2-1000 mA/cm2.

СПОСОБ И РЕАКТОР ДЛЯ ПРОИЗВОДСТВА УГЛЕРОДНЫХ НАНОТРУБОК

Изобретение относится к нанотехнологии. Нагревают реактор. Вводят плазменный газ через инъекционный аппарат. На магнитные катушки, расположенные в верхней и нижней частях реактора, подают ток. Объемную термическую плазму генерируют вращением электрической дуги с использованием приложенного снаружи магнитного поля. Состояние плазменной дуги наблюдают и записывают с помощью видеокамеры через блок визуального наблюдения. Углеродсодержащий материал испаряется и конденсируется на электродах и подложке, а также рециркулируется через объемную плазму. Из охлажденного реактора извлекают углеродные нанотрубки. Изобретение позволяет увеличить масштаб непрерывного или полунепрерывного массового производства углеродных нанотрубок. 2 н. и 20 з.п. ф-лы, 1 табл., 19 ил.

ВАКУУМНО-ДУГОВОЙ ИСТОЧНИК ПЛАЗМЫ

Изобретение относится к вакуумно-плазменной технологии. Технический результат - создание безаварийного вакуумно-дугового источника плазмы протяженной конструкции с прямолинейным характером движения катодных пятен по рабочей поверхности и надежным дугогашением. Вакуумно-дуговой источник плазмы состоит из протяженного цилиндрического катода, размещенного внутри тонкостенного цилиндрического дополнительного экрана, превышающего длину катода и имеющего вдоль оси катода окно, за счет которого по длине катода от поджигающего электрода до дугогасящего экрана формируется рабочая поверхность. Дугогасящий экран с зазором расположен у токового ввода по срезу цилиндрического катода. Вакуумная камера выполняет функции анода. Протяженная магнитная система выполнена в виде петлевой обмотки, которая расположена с внешней стороны камеры. Данное условие позволяет устранить влияние ее теплового воздействия в процессе работы на величину достигаемого вакуума 5•10-5 мм рт.ст. В рабочем объеме расположено обрабатываемое ...

СПОСОБ СОЗДАНИЯ ПЛАЗМЕННОГО ПОТОКА И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ

Использование: в плазменной технике и плазменной обработке поверхностей изделий, в частности для напыления порошков и аэрозолей. Сущность изобретения: способ заключается в смешивании плазменных струй в количестве, кратном двум. Плазменные струи создают с помощью электродных узлов, которые располагают симметрично относительно оси устройства и направляют к оси под углом, меньшим 45°. На каждую плазменную струю налагают три внешних магнитных поля, вектора индукции которых связаны с направлениями векторов индукции собственных магнитных полей плазменных струй. Каждый электродный узел содержит магнитную систему в виде разомкнутых магнитопроводов и соленоидов, охватывающих полюса магнитопроводов. 2 с. и 1 з.п.ф-лы, 4 ил.

СПОСОБ ПОЛУЧЕНИЯ ПЛАЗМЕННОГО ИСТОЧНИКА ИЗЛУЧЕНИЯ И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ

Изобретение относится к плазменной технике, в частности к способам и устройствам с управляемой плазмой, и может быть использовано для решения широкого круга технических задач. Способ получения плазменного источника излучения на основе дугового разряда эрозионного типа включает инициирование разряда, формирование плазменного разряда в канале и формирование магнитного поля пондеромоторного давления. Магнитное поле создают пространственно однородным до формирования плазменного разряда. Плазменный разряд начинают формировать при достижении определенной величины индукции магнитного поля. Одновременно управляют амплитудой и временной формой светового импульса и варьируют условия формирования электромагнитных характеристик разряда. Плазменный источник излучения включает источник питания и формирователь излучающей плазмы из разрядного узла и узла создания прижимающего магнитного поля. Разрядный узел выполнен в виде лотка из диэлектрического материала с покрытием с плоским дном и сквозными отверстиями ...

ПЛАЗМЕННЫЙ РЕАКТОР И СПОСОБ УПРАВЛЕНИЯ ЭЛЕКТРОДУГОВЫМ РАЗРЯДОМ ПЛАЗМЕННОГО РЕАКТОРА

... 1. Плазменный реактор, содержащий разрядную камеру с размещенными в ней двумя стержневыми электронами, устройства ввода-вывода реагентов и продуктов переработки и электромагнит, выполненный в виде охватывающего камеру замкнутого ярма с симметрично расположенными полюсными наконечниками, на двух из которых размещены сериесные обмотки поперечного магнитного поля тока дуги с выводами для подключения цепи электродугового разряда реактора и обмотки управления постоянного тока, отличающийся тем, что на полюсных наконечниках поперечного магнитного поля размещены дополнительные обмотки с выводами, подключенными к клеммам электродов реактора, а полярность подключения выбрана так, что дополнительное магнитное поле направлено встречно создаваемому сериесными обмотками основному поперечному магнитному полю. 2. Плазменный реактор по п.1, отличающийся тем, что на дополнительных обмотках выполнены отводы, позволяющие изменять количество их витков в зависимости от выбранного режима работы реактора. 3.

Вакуумно-дуговое устройство

... ; ВАКУУМНО-ДУГОВОЕ УСТРОЙСТВО содержащее анод в виде трубы, соле-; ноид, расположенный снаружи айода, Ляйг -,катод, рабочий торец которого размещен у торца анода, подложкодержатель, расположенный у противоположного торца анода, и поджигающий электрод, установленный вблизи боковой поверхности катода, отличающее с я тем, что с целью повышения коэффициента использования плазмообразующего материала катода и стабильности работы устройства, соленоид выполнен выступающим за торец анода, у которого размещен катод, на длин , не менее чем вдвое превышающую расстояние от рабочего торца катода до поджигающего электрода, при этом Т :оличеЬтво витков на единицу длины соленоида в части, которая выступает g за торец анода, не менее чем в два (П раза больше, чем в части, охватывающей анод. . / О) 00 mv fy/fff ...

PLASMABRENNER ZUR DURCHFUEHRUNG CHEMISCHER REAKTIONEN.

VORRICHTUNG UND VERFAHREN ZUR BESCHICHTUNG VON MATERIALIEN DURCH EINEN PULSIERENDEN PLASMASTRAHL

PROCEDURE AND DEVICE FOR THE PLASMA PRODUCTION

DEVICE AND PROCEDURE FOR THE COATING OF MATERIALS BY A PULSATING PLASMA BEAM

VORRICHTUNG ZUM LEICHTEN AUSTAUSCH VON PLASMAGENERATOREN IN EINEM SCHACHTOFEN

DEVICE FOR THE EASY CHANGE OF PLASMA GENERATORS IN A SHAFT KILN

CATHODE STRUCTURE FOR USE IN ELECTRODE GLOW DISCHARGE APPARATUS

Focusing unit for an arc discharge apparatus used for plating

PLASMA GENERATOR INSTALLATION IN FURNACE

PLASMA GENERATOR INSTALLATION IN FURNACE

SYSTEM AND METHOD FOR GENERATING AND CONTAINING A PLASMA

A novel plasma generation and containment system includes a first electrode, a second electrode, a power source, and an electromagnet. The first electrode and the second electrode are electrically coupled via a wire to form an open circuit. The voltage is asserted on the open circuit to form a spark between the first electrode and the second electrode to form a closed circuit. Then, a current is asserted on the closed circuit to form a plasma between the first electrode and the second electrode. The electromagnet provides a magnetic field to contain and compress the plasma.

TOROIDAL ARC APPARATUS

AN APPARATUS FOR GENERATION OF A LINEAR ARC DISCHARGE FOR PLASMA PROCESSING

An apparatus for generation of a linear arc discharge for plasma processing, particularly for surface processing of solid substrates, installed in a reactor held at gas pressures below 5 x 104 Pa and powered by a generator of alternating current and/or pulsing power (10), and including: at least one pair of a first electrode plate (1) and a second electrode plate (2) placed opposite to each other at a distance exceeding 0.4 mm and connected to the same pole of the generator which has a counter pole connected to a counter electrode (3), a magnetic field produced by magnets (4) for development of a linear hot zone (5) on the first electrode plate and a linear hot zone (6) on the second electrode plate, having a component of at least 10-3 Tesla across the slit between these electrode plates, an ionized environment (7) containing a working gas (8) involved between the electrode plates and having electrical contact with the electrode plates where an arc discharge (9) is generated and with the ...

Анодный УЗЕЛ вакуумно-дугового ИСТОЧНИКа катодной ПЛАЗМЫ

Изобретение относится к вакуумно-плазменной технологии. Анодный узел содержит, охваченный фокусирующей электромагнитной катушкой, анод, выполненный в виде отрезка трубы. Внутри анода коаксиально ему размещена в электропроводящем кожухе электромагнитная отклоняющая катушка, с направлением магнитного поля навстречу магнитному полю фокусирующей электромагнитной катушки. Внутри отклоняющей катушки, на ее оси вблизи ее торца, обращенного к входному отверстию анода, расположен постоянный отклоняющий магнит, магнитное поле которого направлено аналогично магнитному полю отклоняющей электромагнитной катушки. Анодный узел включает, расположенный внутри электромагнитной отклоняющей катушки, на ее оси вблизи ее торца, обращенного в сторону противоположную от входного отверстия анода, дополнительный постоянный магнит, магнитное поле которого направлено встречно магнитному полю постоянного отклоняющего магнита. При этом положительный полюс источника питания дуги электрически соединен как с анодом через ...

THE DEVICE FOR THE SYNTHESIS OF CARBON NANOMATERIALS PLASMA ARC METHOD

УСТРОЙСТВО ДЛЯ РАЗДЕЛЕНИЯ ЗАРЯЖЕННЫХ ЧАСТИЦ ПО МАССЕ

Устройство для разделения заряженных частиц по массе относится к плазменной и ядерной технике. Оно может быть использовано при получении чистых металлов, производстве ядерного топлива в атомной промышленности, энергетике, металлургии и других отраслях. Устройство содержит источник ионов частиц, выходное отверстие которого расположено в первом участке цилиндрической вакуумной камеры. Второй участок этой камеры охвачен средством для создания внутри нее однородного магнитного поля, в области которого расположен коллектор для сбора тяжелых частиц. В конце второго участка камеры у ее торца расположен коллектор для сбора легких частиц, перед которым расположены кольцевые электроды, при этом коллектор для сбора тяжелых частиц размещен вдоль боковой поверхности камеры. Первый участок камеры охвачен дополнительным средством для создания в камере магнитного поля с напряженностью, которая возрастает от начала первого участка камеры до максимальной величины в месте расположения выходного отверстия ...

DISPOSITIF A PLASMA D'ARC POUR L'OBTENTION DES REVETEMENTS

LE DISPOSITIF COMPREND UNE CHAMBRE DE TRAVAIL FORMANT ANODE 1 SE PRESENTANT SOUS LA FORME D'UN TUBE EN METAL AMAGNETIQUE, UNE CATHODE CONSOMMABLE 2 PERCEE D'UNE OUVERTURE 2A POUR RECEVOIR UNE EBAUCHE 10 ET PRESENTANT, DANS SA SECTION TRANSVERSALE, UNE FORME COINCIDANT AVEC LE PROFIL DE CE TUBE 1, UNE ELECTRODE D'AMORCAGE 3 RELIEE A LA CATHODE 2, AINSI QUE DES SOURCES DE COURANT 4 ET 5 POUR ALIMENTER ET AMORCER L'ARC ENTRE LA CATHODE 2 ET L'ANODE 1. LA CATHODE 2 EST DISPOSEE A L'INTERIEUR DE L'ANODE 1 COAXIALEMENT A CELLE-CI DE MANIERE QUE LA SURFACE LATERALE 2B DE LA CATHODE SOIT ORIENTEE VERS L'ANODE 1 ET SERVE DE SURFACE D'EVAPORATION DONT LA LARGEUR EST INFERIEURE A LA LONGUEUR DE L'ANODE 1. SUR LA SURFACE EXTERIEURE DE L'ANODE 1 EST MONTE UN SYSTEME MAGNETIQUE 16 SERVANT A DEVIER LES IONS DU PLASMA, GENERE PAR L'ARC, DANS LA DIRECTION DE L'EBAUCHE 10.

SOURCE DE PLASMA A ARC ELECTRIQUE ET DISPOSITIF POUR TRAITEMENT AU PLASMA DES SURFACES UTILISANT CETTE SOURCE

LA SOURCE DE PLASMA A ARC ELECTRIQUE COMPORTE UNE CATHODE CONSOMMABLE 1, UNE ANODE CYLINDRIQUE 2 ET UN SOLENOIDE DE FOCALISATION 17 QUI SONT DISPOSES COAXIALEMENT A LA CATHODE CONSOMMABLE 1. CETTE SOURCE DE PLASMA COMPREND EN OUTRE UN CONDUIT DE PLASMA TUBULAIRE 3 RELIE A LA FACE TERMINALE DE L'ANODE 2 ET UN ELECTRO-AIMANT 6 QUI EST DISPOSE DANS LEDIT CONDUIT DE PLASMA TUBULAIRE 3 SUIVANT L'AXE DE CELUI-CI. L'ELECTRO-AIMANT 6 EST RENFERME DANS UNE ENVELOPPE 7 EN MATERIAU AMAGNETIQUE QUI EST DISPOSEE DE SORTE QU'ELLE RECOUVRE LA ZONE DE VISIBILITE OPTIQUE DE LA CATHODE 1. LE SOLENOIDE DE FOCALISATION 17 EST ENROULE SUR LE CONDUIT DE PLASMA TUBULAIRE 3 ET EST CONNECTE EN OPPOSITION PAR RAPPORT A L'ENROULEMENT DE L'ELECTRO-AIMANT 6.

DISPOSITIF A PLASMA D'ARC SOUS VIDE

LE DISPOSITIF COMPREND UNE CATHODE CONSOMMABLE 1 PRESENTANT UNE FACE DE TRAVAIL 3, UN SOLENOIDE 4 ABRITANT UNE ANODE TUBULAIRE 5 ET UNE ELECTRODE D'AMORCAGE 6. LE SOLENOIDE 4 EMBRASSE L'ANODE TUBULAIRE 5 ET LA CATHODE CONSOMMABLE 1, LE NOMBRE DE SPIRES D'ENROULEMENT PAR UNITE DE LONGUEUR DU SOLENOIDE 4, DANS SA PORTION EMBRASSANT LA CATHODE CONSOMMABLE 1, EST SUPERIEUR AU NOMBRE DE SPIRES D'ENROULEMENT PAR UNITE DE LONGUEUR, PRESENTE PAR LE RESTE DU SOLENOIDE. EN OUTRE, LE SOLENOIDE 4 DEPASSE L'ELECTRODE D'AMORCAGE, DU COTE OPPOSE A LA FACE DE TRAVAIL 3, D'UNE LONGUEUR SUPERIEURE A LA MOITIE DE LA LONGUEUR DE LA PORTION DE SOLENOIDE EMBRASSANT LA CATHODE CONSOMMABLE 1.

METHOD AND DEVICE FOR INSTALLATION OF A PLASMA GENERATOR IN THE WALL OF A SHAFT FURNACE

DEVICE HAS Vacuum ARC PLASMA

PLASMA BURNER WITH MICROWAVE STIMULATION

The invention relates to a plasma burner with microwave stimulation, by means of which a stable plasma (5) can be generated even with significant pressure variations for the process gas. Said plasma burner comprises, in addition to a diameter enlargement (4) of the cavity (3) in the region of the plasma (5) as already disclosed in DE 19 511 915 A1, electrically-conducting windings (12), coaxially encompassing the plasma (5) within the cavity formed by the diameter enlargement. Said windings (12) permit the electrical waveguide system, formed by the diametrically-enlarged cavity (4) and windings (12) as coaxial outer guide and the plasma as coaxial inner guide, to be suitable for the transmission of microwaves in said region of the plasma burner with regard to the parameters of impedance and transmission bandwidth in a particular manner, even with significant pressure variations in the process gas and corresponding variable conductance conditions. Said plasma burner is characterised in operation ...

METHOD AND APPARATUS FOR PLASMA GENERATION

ПЛАЗМЕННЫЙ ИСТОЧНИК СВЕТОВОГО ИЗЛУЧЕНИЯ

Полезная модель относится к плазменной технике, в частности к устройствам с управляемой плазмой, и может быть использована для решения широкого круга технических задач при испытаниях материалов, приборов, образцов техники на устойчивость к воздействию светового излучения природных и техногенных вспышек, в фотохимии и в световых технологиях обработки материалов. Задачей заявляемой полезной модели является расширение функциональных возможностей плазменного источника светового излучения путем увеличения площади излучения и повышения эффективности формирования параллельных световых пучков. Такой технический эффект достигнут тем, что в плазменном источнике светового излучения, включающем управляемый источник питания, выход которого соединен с анодом разделительного диода, блок управления, выход которого соединен с управляющим входом управляемого источника питания, а вход - с первым выходом синхронизатора, второй выход которого соединен с управляющим входом узла инициирования газового разряда ...

ПЛАЗМЕННЫЙ ИСТОЧНИК СВЕТОВОГО ИЗЛУЧЕНИЯ НА ОСНОВЕ МАГНИТОПРИЖАТОГО РАЗРЯДА

Плазменный источник светового излучения на основе магнитоприжатого разряда, включающий источник питания в виде тиристорного выпрямителя, формирователь излучающей плазмы из узла создания прижимающего магнитного поля из магнита с сердечником и разрядного узла, выполненного в виде установленого в зазоре сердечника магнита лотка из диэлектрического материала с плоским дном, в открытых торцах которого расположены электроды, выполненные из графита, соединенные между собой инициатором разряда, при этом инициатор разряда снабжен автономным емкостным источником питания, а между положительными выводами тиристорного выпрямителя и емкостного источника питания включен развязывающий диод, отличающийся тем, что магнит выполнен в виде постоянного магнита из по крайней мере одной пары изготовленных из композитного материала Nd - Fe - В пластин, намагниченных в направлении, перпендикулярном наибольшей поверхности, с величиной остаточной намагниченности не менее 1.4 Тл, при этом пластины размещены разноименными ...

ВАКУУМНО-ДУГОВОЕ УСТРОЙСТВО

Изобретение относится к области вакуумно-плазменной технологии и может быть использовано для нанесения покрытий в вакууме. Технический результат: обеспечение стабильной безаварийной работы источника плазмы протяженной конструкции, повышение равномерности толщины формируемого покрытия на обрабатываемых изделиях, ускоренный выход катода в рабочий режим. В вакуумно-дуговом устройстве в электрическую цепь питания дуги включены аналоговый блок управления, коммутирующее устройство и дополнительные балластные сопротивления, величина которых соответственно определяет ток очистки и ток разогрева катода. 3 ил.

ПЛАЗМЕННЫЙ РЕАКТОР ПОСТОЯННОГО ТОКА

... 1. Плазменный реактор постоянного тока, включающий реакционную камеру, два стержневых электрода, устройства ввода сырья, устройства вывода продуктов переработки, а также магнитопровод с охватывающим реакционную камеру ярмом и полюсными наконечниками, на двух из которых, установленных в плоскости, перпендикулярной плоскости установки электродов, размещены сериесные обмотки электромагнита с выводами для подключения к источнику постоянного тока питания электрической дуги плазменного реактора, и обмотки управления, отличающийся тем, что выводы обмоток управления подключены к вторичным обмоткам трансформатора через тиристорный управляемый выпрямитель так, что магнитный поток управления направлен только в одну сторону встречно поперечному магнитному полю сериесных обмоток, причем управляющие выводы тиристоров выпрямителя соединены с выходом синхронного импульсно-фазового устройства, вход которого через управляющий орган, содержащий задатчик установленной величины напряжения и переходное устройство ...

VORRICHTUNG UND VERFAHREN ZUR BESCHICHTUNG VON MATERIALIEN DURCH EINEN PULSIERENDEN PLASMASTRAHL

GENERATION OF PLASMA

... 1327765 Thermonuclear apparatus UNITED KINGDOM ATOMIC ENERGY AUTHORITY 10 Sept 1970 [17 Sept 1969] 45927/69 Heading G6P In a thermonuclear system, having a stellarator plasma confinement system, a plasma source is provided in the toroidal vessel. The gas to be ionized (hydrogen) is admitted to the toroid, 11, through the valve 21. Ionization is effected by a unidirectional current pulse to the cathode 14 and anode 18. The radial electric field between the anode and cathode is related to the axial magnetic field, generated by the solenoid 10, so that the electron Larmour radius is less than the separation of 14 and 18 and the Larmour radius of the ions is greater than the separation.

PLASMA ARC MECHANISM FOR LAYING ON COATS

Plasma generator and procedure for the use of a plasma

PLASMA ARC MECHANISM FOR LAYING ON COATS

VORRICHTUNG ZUM LEICHTEN AUSTAUSCH VON PLASMAGENERATOREN IN EINEM SCHACHTOFEN

PROCEDURE AND PLANT FOR TREATING SUBSTRATES OF MEANS IONS A NIEDERVOLTBOGENENTLADUNG

METHOD FOR PLASMA JET WELDING

The invention relates to a method for plasma jet welding by means of a free radio frequency-induced plasma beam. According to the invention, the rf-induced plasma beam is generated by means of the following procedure steps: - generation of a stationary high-pressure plasma (2) by igniting a first process gas in a pilot plasma welding torch (1) and introduction of the plasma gas (2)into an rf-transparent working tube (3) comprising a gas inflow opening (4) and a gas outflow opening (5) , with the rf-transparent working tube (3) being wrapped in a coupling coil (13), - introduction of a second process gas (6) into the rf- transparent tube (3) at a pressure of p .gtoreq. 1 bar, with the second process gas (6) being introduced through gas inflow opening (4) into the rf-transparent tube (3) in such a way that it exhibits a tangential flow component, - generation of an rf-plasma (7) in the rf-transparent tube (3) by electrode-free ignition of the gas mixture (2, 6) ; - generation of a plasma ...

METHOD AND DEVICE FOR PLASMA WELDING-MIG

IMPROVED METHOD AND APPARATUS FOR STABILIZING AN ARC SPUTTERING TARGETS NON-PERMEABLE BY MEANS OF A STOP RING BREATHABLE

PROCESS AND APPARATUS FOR VARYING THE POSITION OF THE ARC ROOT IN A PLASMA ARC SUITABLE FOR PRODUCING TITANIUM DIOXIDE PIGMENTS

GENERATEUR DE GAZ IONISE A TRES HAUTE PRESSION ET TRES HAUTE TEMPERATURE

GENERATEUR DE GAZ IONISE A ECOULEMENT HOMOGENE SUPERSONIQUE. CE GENERATEUR COMPREND DES MODULES UNITAIRES 11, 12, 13, 14 COMPORTANT: -DEUX ELECTRODES COAXIALES 22, 23 DE FORME CYLINDRIQUE, L'ELECTRODE AVAL 23 ETANT OUVERTE ET TRAVERSEE PAR L'ECOULEMENT; DES MOYENS 30 POUR INJECTER UN GAZ EN TOURBILLONS SELON DES PLANS PERPENDICULAIRES A L'AXE COMMUN AUXDITES ELECTRODES, LE GAZ AINSI INJECTE TRAVERSANT UN ARC ELECTRIQUE 26 QUI PREND DE CE FAIT UNE FORME ALLONGEE; -DES MOYENS 27 D'AMORCAGE DE L'ARC 26 ENTRE LES DEUX ELECTRODES COAXIALES 22, 23; -DES MOYENS 35 POUR ASSURER LE REFROIDISSEMENT DES ELECTRODES COAXIALES 22, 23; -DES MOYENS POUR ASSURER LE REFROIDISSEMENT DES ELECTRODES, DES DISPOSITIFS D'INJECTION DE GAZ 30 DE LA CHAMBRE DE COUPLAGE 15; -DES BOBINES 44 CREANT, AUTOUR DE LA PREMIERE ELECTRODE AMONT 22, UN CHAMP MAGNETIQUE ASSURANT LE DEPLACEMENT DU PIED DE L'ARC 26 AUTOUR DE LA SURFACE INTERNE DE LADITE ELECTRODE AMONT 22. APPLICATION AUX TESTS DE MATERIAUX DE PROTECTION THERMIQUE ...

Arc plasma gun - with coaxial electromagnet facing cathode inside plasma guide carrying focusing solenoid

PLASMA SOURCE

PLASMABAGAPPARAT FOR PALEGGNING AV OVERDRAG

PROCEDURE AND APPARATUS FOR THE COATING OF MATERIALS BY MEANS OF A PULSATING PLASMA BEAM

Procedure and apparatus for the coating of materials, in which procedure the material (7) is coated by means of a pulsating plasma beam emitted from at least one electrode (1), said plasma beam being accelerated by a magnetic field and deflected by same to separate the uncharged particles from it, whereupon the plasma beam hits the surface of the material (7) to be coated. The apparatus of the invention for the coating of materials is provided with electrodes (1, 3), at least one voltage source (2) and at least one capacitor (C1) for producing a pulsating plasma beam and at least one deflected coil (4) which generates a magnetic field that accelerates said plasma beam emitted by at least one electrode (1) and deflects the beam to separate the uncharged particles from it.

Method and arrangement for stabilizing an arc between an anode and a cathode particularly for vacuum coating devices

A shield to limit an electric arc discharge between an anode and a cathode to a designated portion of the cathode surface is fashioned in the shape of a limiting ring with good electrically conducting surface, e.g., copper or aluminum, surrounding this surface. Application of the invention, especially with heavy current arc discharges causes the tracing point of the discharge to move stochastically back and forth on the cathode.

Arc plasma generator and a plasma arc apparatus for treating the surfaces of work-pieces, incorporating the same arc plasma generator

An arc plasma generator comprises a consumable cathode, a cylindrical anode, and a focusing solenoid arranged coaxially with the consumable cathode. A power unit for maintaining the arc is electrically connected to the consumable cathode and the anode. In accordance with the invention the arc plasma generator further comprises a tubular plasma guide connected to an end face of the anode and an electromagnet. The electromagnet is arranged in the tubular plasma guide on the axis thereof and is enclosed in a housing made of a nonmagnetic material and having a cross-sectional area sufficient to conceal the cathode from the viewer's sight, looking in the direction of the cathode through the plasma guide. Also, the focusing solenoid is arranged on the tubular plasma guide and is connected in opposition with the coil of the electromagnet. A plasma arc apparatus for treating the surfaces of work-pieces comprises an arc plasma generator of the invention and an assembly for holding the work-piece ...

GENERATING ELECTRIC ARC, WHICH DIRECTLY AREALLY THERMALLY AND MECHANICALLY ACTS ON MATERIAL, AND DEVICE FOR GENERATING ELECTRIC ARC

Generating electric arc, which thermally and mechanically acts on material in such manner that the electrical arc is shaped and guided by the action of magnetic field and hydro-mechanical forces on the electrical arc, wherein: —the substantial part of the electric arc acts directly and areally on conductive and/or non-conductive material to be disrupted, —the substantial part of the electric arc's heat flow is directed into the material to be disrupted, —wherein both electric arc roots move on the electrodes of the generator and the electric arc has preferably a shape of a spiral. A device for generating an electric arc with thermal and mechanic action on material containing axially symmetrical electrodes, i.e. an anode () and a cathode (), a spark gap (), nozzles () for the working medium flow, cooling media inlet and outlet (), electric power supply (), ring-shaped magnets () whose section has the shape of a triangle and the anode () has the shape of the diffuser with an angular span from 5 0 to 130°. 2. Generating electric arc according to characterized in that the electrical arc is shaped and guided also in such manner that by interaction of magnetic field and hydro-mechanical forces a substantial part of the electric arc is moved and is directed and pushed outside the space of the generator towards the rock to be disrupted.3. (canceled)4. (canceled)5. (canceled)6. Generating electric arc according to characterized in that the electrode having the shape of the diffuser provides increase of an area through which working medium flows and said electrode interacts with the magnetic field and hydro-mechanical forces and thus heat-exposed surface of the electrodes on which roots of the electric arc move is being increased.7. Generating electric arc according to any of characterized in that the magnetic field and hydrodynamic forces are set by their characteristic parameters in such manner that by their action on the electric arc the part of the electric arc is ...

Manufacturing apparatus and method for carbon nanotube

An apparatus for manufacturing a carbon nanotube of the present invention includes: at least two electrodes (11,12) whose tips oppose to each other; a power supply (18) which applies a voltage between the electrodes so as to generate discharge plasma in a discharge area between the electrodes; a plurality of magnets (20-23) which generates at least one of a magnetic field having lines of magnetic force in multiple directions or a magnetic field having a component in parallel with the direction of a discharge current in the generation area of the discharge plasma; and a magnet cooling unit (30,36,38) which cools the magnets. The carbon nanotubes are manufactured by cooling the magnets. With this arrangement, there is provided a manufacturing apparatus and method for a carbon nanotube, which can efficiently synthesize carbon nanotubes with extremely low concentration of impurities on an industrial basis, and simultaneously can properly control especially the length of the obtained carbon ...

ROTARY, FORCED-FLOW COLD PLASMA REACTOR

L'invention concerne un réacteur pour la formation d'un plasma dans un fluide en circulation, comprenant : une tige centrale (21) appartenant à une première électrode ; un isolateur (23) ; un corps tubulaire (22) appartenant à une seconde électrode ; un espace cylindrique (28) pour la circulation du fluide entre le corps tubulaire (22) et l'isolateur (23) ; un disque de contrôle (4) ayant une face avant reliée à une extrémité aval (25) de la tige centrale ; un aimant permanent (3) plaqué contre une face arrière du disque de contrôle ; une ou plusieurs nervures (45) étant ménagées sur la face avant (40) du disque de contrôle selon un motif en relief définissant des pointes successives de départ d'arc électrique réparties autour de l'axe central (1) du réacteur de façon à générer des arcs électriques situés sur un cône de réaction (6) et apparaissant comme tournant autour de l'axe central (1). De préférence, le réacteur est fabriqué à partir d'une bougie d'allumage 2 traditionnelle d'un véhicule ...

AN APPARATUS FOR GENERATION OF A LINEAR ARC DISCHARGE FOR PLASMA PROCESSING

An apparatus for generation of a linear arc discharge for plasma processing, particularly for surface processing of solid substrates, installed in a reactor held at gas pressures below 5 x 104 Pa and powered by a generator of alternating current and/or pulsing power (10), and including: at least one pair of a first electrode plate (1) and a second electrode plate (2) placed opposite to each other at a distance exceeding 0.4 mm and connected to the same pole of the generator which has a counter pole connected to a counter electrode (3), a magnetic field produced by magnets (4) for development of a linear hot zone (5) on the first electrode plate and a linear hot zone (6) on the second electrode plate, having a component of at least 10-3 Tesla across the slit between these electrode plates, an ionized environment (7) containing a working gas (8) involved between the electrode plates and having electrical contact with the electrode plates where an arc discharge (9) is generated and with the ...

ВАКУУМНОЕ ДУГОВОЕ УСТРОЙСТВО

Изобретение относится к области вакуумно-плазменной технологии и может быть использовано для обработки длинномерных и крупногабаритных изделий. Устройство содержит протяженный цилиндрический катод с симметрично расположенными на нем электростатическими экранами, снабженный с торцов токовыми вводами, подключенными к электрической схеме включения ограничительных сопротивлений и к источнику питания, поджигающий электрод и анод, при этом электростатические экраны установлены у токовых вводов по срезу катода, за которыми расположены магнитные системы, формирующие аксиально-симметричное встречное магнитное поле, а электрическая схема снабжена коммутирующим устройством подключения раздельных источников питания к управляющему сопротивлению. Изобретение направлено на повышение работоспособности источника плазмы, эффективности использования материала катода, равномерности формируемого покрытия. 1 ил.

СВЧ-плазмотрон и способ генерации плазмы

Изобретение относится к средствам генерирования плазмы СВЧ-разряда. Ввод СВЧ-энергии осуществляется в металлическую разрядную камеру через продольную вдоль оси камеры щель из присоединяемой к этой щели металлической трубы-волновода, располагаемой вдоль оси разрядной камеры. Через эту же щель вводится вращающийся вокруг оси разрядной камеры поток газа, закрученный внутри трубы-волновода. Для предотвращения образования зоны рециркуляции газа в осевой зоне внутри трубы-волновода располагают дополнительную металлическую трубу меньшего диаметра. Между трубой меньшего диаметра и внешней трубой-волноводом вводится вращающийся поток газа, далее по образованному таким образом коаксиальному волноводу вводится СВЧ-энергия на электромагнитной волне типа H11, которая возбуждается в коаксиальном волноводе, через окно во внешней трубе коаксиального волновода в зоне, удаленной от щели ввода, в разрядную камеру. Причем обеспечивается удаление герметизирующего диэлектрического окна ввода СВЧ-энергии в зону ...

ARRAYS OF METAL AND METAL OXIDE MICROPLASMA DEVICES WITH DEFECT FREE OXIDE

A microplasma device includes a microcavity or microchannel defined at least partially within a thick metal oxide layer consisting essentially of defect free oxide. Electrodes are arranged with respect to the microcavity or microchannel to stimulate plasma generation in said microcavity or microchannel. At least one of the electrodes is encapsulated within the thick metal oxide layer. A method of fabricating a microcavity or microchannel plasma device includes anodizing a flat or gently curved or gently sloped metal substrate to form a thick layer of metal oxide consisting essentially of nanopores that are perpendicular to the surface of the metal substrate. Material removal is conducted to remove metal oxide material to form a microcavity or microchannel in the thick layer of metal oxide. 1. A microplasma device , comprising:a microcavity or microchannel defined at least partially within a thick metal oxide layer consisting essentially of defect free oxide; andelectrodes arranged with respect to said microcavity or microchannel to stimulate plasma generation in said microcavity or microchannel upon application of suitable voltage wherein at least one of said electrodes is encapsulated within said thick metal oxide layer.2. The device of claim 1 , wherein said thick substantially metal oxide layer is in the range of ˜100-500 μm thick.3. The device of claim 1 , wherein at least one of said electrodes is encapsulated within said thick metal oxide layer such that it is isolated from said microcavity or microchannel.4. The device of claim 1 , wherein said microcavity or microchannel comprises a gentle curve at its top.5. The device of claim 1 , wherein said microcavity or microchannel comprises no sharp edges.6. The device of claim 1 , wherein said microcavity or microchannel comprises a curved bottom.7. The device of claim 1 , wherein said microcavity or microchannel comprises a flat bottom.8. The device of claim 1 , wherein said microcavity or microchannel comprises ...

MAGNETIC FIELD REDUCTION APPARATUS AND MAGNETIC PLASMA FLOOD SYSTEM FOR ION BEAM PROCESSING

An ion beam processing system includes a plasma generator with a magnetic flood system. Magnets are provided for reducing the transverse magnetic field in the ion beam transport region of the plasma flood device so as to control charging damage or to neutralize beam space charge in ion beam processing and semiconductor ion implantation. The system is especially adapted for beam lines with ribbon beams. 1. An ion beam processing system , comprising:an ion beam generator and a processing target;a plasma flood device disposed to flood charged particles into the ion beam region, said plasma flood device including a plasma generator with an aperture issuing into said ion beam region;a magnet system having a first magnet configured to establish a first magnetic field effective in the cathode region of the plasma generator and at least one second magnet disposed opposite said source magnet, across the ion beam, and configured to establish a second magnetic field effective to offset said first magnetic field and generate substantially a null field in the region of the ion beam.2. The ion beam processing system according to claim 1 , wherein said ion beamline has a substantially rectangular cross section for guiding a ribbon beam with a relatively narrow extent in one direction and a relatively wide extent in a direction perpendicular to the one direction.3. The ion beam processing system according to claim 1 , wherein said plasma generator is a d.c. flood generator powered by a d.c. electrical arc.4. The ion beam processing system according to claim 3 , wherein said plasma generator includes a filament cathode powered by d.c. power or by a.c. power.5. The ion beam processing system according to claim 1 , wherein said first magnet of said magnet system is a source magnet disposed in an arc chamber of said plasma flood device claim 1 , and said arc chamber is configured to form a source magnetic yoke.6. The ion beam processing system according to claim 1 , wherein said at ...

PLASMA GENERATION DEVICE

The plasma generation device is provided with a high frequency generation device that generates a high frequency wave, and a high frequency radiator that radiates the high frequency wave outputted from the high frequency generation device to a target space , and generates plasma by supplying energy of the high frequency wave to the target space . In the plasma generation device , the high frequency generation device is provided with an oscillator that oscillates a high frequency wave, and an amplifier that amplifies and outputs the high frequency wave oscillated by the oscillator to the high frequency radiator . In the high frequency generating device the amplifier alone is integrated with the high frequency radiator , from among the oscillator and the amplifier 1. A plasma generation device , comprising:a high frequency generation device that generates a high frequency wave; anda high frequency radiator that radiates the high frequency wave outputted from the high frequency generation device to a target space, plasma being generated by supplying energy of the high frequency wave to the target space from the high frequency radiator, whereinthe high frequency generation device includes an oscillator that oscillates the high frequency wave, and an amplifier that amplifies the high frequency wave oscillated by the oscillator and outputs the high frequency wave thus amplified to the high frequency radiator, and,from among the oscillator and the amplifier, the amplifier alone is integrated with the high frequency radiator.2. The plasma generation device according to claim 1 , whereinthe amplifier includes a plurality of stages of amplifying elements, andfrom among the plurality of stages of amplifying elements, a downstream amplifying element is integrated with the high frequency radiator.3. The plasma generation device according to claim 1 , whereinthe high frequency radiator is an ignition plug having tip end side formed with a discharge gap and exposed to the target ...

TARGET FOR SPARK VAPORIZATION WITH PHYSICAL LIMITING OF THE PROPAGATION OF THE SPARK

The present invention relates to a target for an ARC source having a first body () of a material to be vaporized, which essentially comprises in one plane a surface which is intended to be vaporized, wherein the surface surrounds in this plane a central area, characterized in that in the central area a second body () is provided, which is preferably in the form of a disk and is electrically isolated from the first body (), in such a way that the second body () can essentially provide no electrons for maintaining a spark. 13737. Target for an ARC source having a first body () of a material to be vaporized , which essentially comprises in one plane a surface which is intended to be vaporized , wherein the surface surrounds in this plane a central area , characterized in that in the central area a second body () is provided , which is preferably in the form of a disk and is electrically isolated from the first body () , in such a way that the second body () can essentially provide no electrons for maintaining a spark.2357939. Target according to claim 1 , characterized in that the first body () in the central area comprises a recess () into which the second body is lowered and fastened by means of an isolator pin () claim 1 , wherein the distance between the first body () and the second body () is one or several values between and including 1.5 mm and 3.5 mm.3753. Target according to claim 2 , characterized in that the body () comprises claim 2 , at least at the surface that protrudes from the recess () claim 2 , material that corresponds to the material of the body ().47137. Target according to one of the or claim 2 , characterized in that the second body () comprise at least one recess () designed in such a way that the center of gravity of the second body () mounted on the axis comes to rest level with the jacket of the hole.5. Target according to one of the preceding claims claim 2 , characterized in that the second body is made of a magnetically soft material. The ...

PROCESS FOR COATING A SUBSTRATE BY MEANS OF AN ARC

The invention relates to a process and an evaporator for coating a substrate by means of an arc in a vacuum chamber () in the case of low-pressure arc evaporation, wherein the vacuum chamber () has at least one evaporator, which comprises a target material (), reactive gas supply lines () for supplying reactive gas, and a vacuum pump, wherein the evaporator comprising the target material () serves as the cathode and the inner wall () of the vacuum chamber () serves as the anode between which the arc is generated. According to the invention, high-melting point metal is used as the target material () for catalysis, and the pressure in the vacuum chamber () during coating is at least 0.5 Pa, in particular at least 3 Pa, preferably 5 Pa. A layer of catalytically active metal having a high oxygen content is formed on the substrate. 114-. (canceled)1510121462646668. A process for coating a substrate by means of an arc in a vacuum chamber () at low pressure—arc evaporation— , said vacuum chamber includes at least one evaporator ( , , , , , ) , comprising the steps of:{'b': 12', '14', '62', '64', '66', '68', '10', '20', '12', '14', '62', '64', '66', '68', '20', '36', '10, 'generating an arc using said at least one evaporator (, , , , , ) of said vacuum chamber () wherein said at least one evaporator comprises a target material () and wherein said evaporator (, , , , , ) which comprises said target material () serves as a cathode and the inner wall () of said vacuum chamber () serves as an anode between which said arc is generated;'}{'b': 53', '54, 'using reactive gas supply means (, ) for supplying reactive gas;'}using a vacuum pump;{'b': '20', 'using a high melting point metal as said target material () for electrically active surfaces and/or for catalysis;'}{'b': '10', 'using a pressure of at least 0.5 Pa in said vacuum chamber () during coating;'}forming a layer of electrically active metal having a high oxygen content and/or a layer of a catalytically active metal ...

PLASMA EMITTER

An apparatus for producing plasma comprises a first electrode and a porous element. The first electrode is in direct contact with a first side of the porous element. A second electrode is positioned adjacent a second side of the porous element, at least a portion of the second electrode being spaced from the second side of the porous element so as not to be in direct contact with the second side of the porous element. A plasma generating region is defined adjacent the second electrode. 1. An apparatus for producing plasma , comprising:a first electrode;a porous element, the first electrode being in direct contact with a first side of the porous element;a second electrode, positioned adjacent a second side of the porous element, at least a portion of the second electrode being spaced from the second side of the porous element so as not to be in direct contact with the second side of the porous element; anda plasma generating region defined adjacent the second electrode.2. The apparatus of claim 1 , wherein the first electrode comprises a metal or metal alloy.3. The apparatus of claim 1 , wherein the first electrode is configured as a solid claim 1 , a screen claim 1 , or a trace.4. The apparatus of claim 1 , wherein the first electrode is smaller in both length and width than the porous element.5. The apparatus of claim 1 , wherein the porous element is an unglazed ceramic or unglazed clay material.6. The apparatus of claim 1 , wherein the second electrode comprises a metal or a metal alloy.7. The apparatus of claim 1 , wherein the second electrode is configured as a solid or a screen.8. The apparatus of claim 1 , wherein the second electrode is smaller in both length and width than the porous element.9. The apparatus of claim 1 , wherein power source supplies AC or DC current.10. The apparatus of claim 1 , wherein the plasma generating region forms a volume of at least 5 in.11. The apparatus of claim 1 , wherein the plasma generating region defines a volume of about ...

PVD COATING FOR METAL MACHINING

The present invention relates to a wear resistant coating suitable to be deposited on cutting tool inserts for chip forming metal machining. The coating comprises at least two layers with different grain size, but with essentially the same composition. The coating is deposited by Physical Vapour Deposition (PVD). 19-. (canceled)10. Deposition method using the vacuum arc evaporation to deposit AlTiN coatings with a composition minimal: (AlTi)N 55≦X≦74 at %{'sub': x', '1-X, 'or with a composition: (AlMe)N, Me: Ti or alloys with Cr, Zr, Hf, V 4-5 group elements,'}{'sub': a', '1-z-b', 'b, 'or with a composition: (AlMeZ)N, Z: B, S, Y, Ce, Sc 0≦b<<10 at %,'}wherein at least one layer is provided showing a fine morphology and consisting of majority phase of a fcc-lattice type combined with a certain content of the w-AlN-lattice type, by selection of the evaporator current in combination with the magnetic field of the evaporator in such a way that a weak magnetic field of about 0.5 to 2.5 mT is used with the field mainly perpendicular to the cathode surface, and a current of at least 100 A, and more at a nitrogen pressure of 0.5 to 10 Pa, and a bias voltages of about 20 to 300 V, at a deposition temperature between 300 to 700° C., is applied and at the same time using a strong magnetic field of about 3 to 20 mT with the field mainly perpendicular to the cathode surface, and current of at least 50 A and more, at a nitrogen pressure of 0.5 to 10 Pa, and bias voltages of about 20 to 300 V, at a deposition temperature in between 300 to 700° C., is applied.1112-. (canceled)13. The deposition method according to claim 10 , used to generate multilayer structures consisting at least of two layers:layer A as a pure fcc-lattice type and layer B having a certain w-AlN-lattice type content.14. The deposition method according to claim 13 , using a low evaporator current (30 . . . 100) A to generate the layer A and a high evaporator current (100 . . . 300) A to generate the layer B.14. ( ...

SYSTEMS AND METHODS FOR GENERATING ELECTRON SPIRAL TOROIDS

A spheromak is a plasma of ions and electrons formed into a toroidal shape. A spheromak plasma can include electrons and ions of nearly equal amounts such that it is essentially charge neutral. It contains large internal electrical currents and their associated internal magnetic fields arranged so that the forces within the spheromak are nearly balanced. The spheromak described herein is observed to form around an electric arc in partial atmosphere, and is observed to be self-stable with no external magnetic containment. 1) A system for generating a toroidal flow of electrons around an electric arc comprising:a housing to regulate gas pressure, the housing including a chamber;a first electrode spaced from a second electrode by a selected separation distance within the chamber;an actuator to provide relative movement between the first electrode and the second electrode to control the separation distance;a power source to apply a controlled electric voltage across the separation distance to generate an electric arc;a controller to adjust the electric voltage across the separation distance, the controller being connected to the actuator to adjust the separation distance between the first electrode and the second electrode to initiate a toroidal flow of electrons around the arc; anda background gas to supply a source of ions within the chamber.2) The system of wherein the actuator comprises a motor.3) The system of wherein the actuator moves at least one of the first electrode and second electrode from an arc ignition position to an operating position.4) The system of wherein the electric voltage across the arc path is modulated from an initial arc voltage to an operating arc voltage to generate a toroid of electrons about the electric arc.5) The system of wherein the separation distance is in a range of 0-30 mm in the ignition arc position and the separation distance is in a range of 30-150 mm in the operating position.6) The system of wherein the chamber is connected ...

TUNABLE NANOPOROUS FILMS ON POLYMER SUBSTRATES, AND METHOD FOR THEIR MANUFACTURE

The invention is directed to a composite polymer/nanoporous film system and methods of fabrication of tunable nanoporous coatings on flexible polymer substrates. The porosity of the nanoporous film can be tuned during fabrication to a desired value by adjusting the deposition conditions. Experiments show that SiOcoatings with tunable porosity fabricated by oblique-angle electron beam deposition can be deposited on polymer substrates. These conformable coatings have many applications, including in the field of optics where the ability to fabricate tunable refractive index coatings on a variety of materials and shapes is of great importance. 1. A composite polymer-nanoporous film , comprising: a nanoporous coating; and a flexible or moldable polymer substrate , wherein said nanoporous coating is on the surface of said polymer substrate and wherein said nanoporous coating is tunable on said polymer substrate.2. The composite polymer-nanoporous film of claim 1 , wherein said nanoporous coating on the surface of the polymer substrate is from about 10 nm to about 2000 nm thick.35-. (canceled)6. The composite polymer-nanoporous film of claim 1 , wherein said nanoporous coating is firmly adhered to the flexible or moldable polymer substrate claim 1 , and wherein upon repeated bending of the composite polymer-nanoporous film claim 1 , the composite polymer-nanoporous film retains its structural and physical characteristics.78-. (canceled)7. The composite polymer-nanoporous film of claim 1 , wherein said nanoporous coating is a tunable refractive index film and can be deposited on said flexible or moldable polymer substrate.10. The composite polymer-nanoporous film of claim 1 , wherein said composite has a plurality of uniformly or randomly distributed nanopores.11. The composite polymer-nanoporous film of claim 1 , wherein the nanoporous coating comprises organic particles claim 1 , inorganic particles claim 1 , metals or non-metals.1215-. (canceled)16. The composite polymer ...

METHOD FOR SPARK DEPOSITION USING CERAMIC TARGETS

The present invention relates to an arc deposition source, comprising an electrically conductive ceramic target plate (), on the back of which a cooling plate () is provided, wherein a shield () is provided in the central area on the surface to be coated so that the cathode spot of the arc does not reach the central area () of the surface during operation of the deposition source. 1. Arc deposition source , comprising:{'b': '1', 'a cathode with an electrically conductive ceramic target plate (),'}{'b': '21', 'an anode (),'}{'b': 23', '1', '21', '1', '21, 'a voltage supply source (), which is interconnected with the target plate () and the anode () in such a manner that the target plate () opposite the anode () can be put to negative potential,'}{'b': '20', 'an ignition device () for igniting the arc,'}characterized in that{'b': 1', '10, 'the target plate () is operatively connected thermally across a large area and preferably by means of a bonding connection with a cooling plate (),'}and means are provided for constraining the movement of the cathode spot.2. Arc deposition source according to claim 1 , characterized in that the movement-constraining means are arranged in such a manner that the cathode spot can be maintained in movement even when microfissures are present in the target plate.3. Arc deposition source according to claim 1 , characterized in that the means for constraining the movement of the cathode spot have essentially the same effect on the deposition surface claim 1 , i.e. everywhere where the cathode spot may reach on the surface of the target plate.4. Arc deposition source according to claim 3 , characterized in that the means for constraining the movement of the cathode spot comprise magnetic means resulting in an essentially uniform movement of the cathode spot.5. Arc deposition source according to claim 4 , characterized in that the magnetic means are designed in such a way that they result in an essentially homogeneous magnetic field on the ...

COATED CUTTING TOOL INSERT

A cutting tool insert for machining by chip removal includes a body of a hard alloy of cemented carbide, cermet, ceramics, polycrystalline diamond or cubic boron nitride based materials onto which a hard and wear resistant coating is deposited by physical vapour deposition (PVD). The coating includes at least one layer of a NaCl-structured (TiAlCrMe)(CON) where Me is one or more of the elements Zr, Hf, V, Nb, Ta, Mo, W and/or Si, 0.100.20, c>0.05, 0≦d<0.25, 0.7525 GPa. 1. Cutting tool insert for machining by chip removal comprising a body of a hard alloy of cemented carbide , cermet , ceramics , polycrystalline-diamond or cubic boron nitride based materials onto which is deposited a hard and wear resistant coating comprising at least one layer characterised in that said layer is a columnar NaCl-structured (TiAlCrMe)(CON) with a thickness between 0.5 and 10 μm , a compressive stress level of −6 GPa<σ<−0.5 GPa , a nanohardness >25 GPa with an average columnar width of <1 μm and where Me is one or more of the elements: Zr , Hf , V , Nb , Ta , Mo , W or Si and0.100.20,c>0.05,0≦d<0.25,0.750.25.5. Cutting tool insert according to characterised in that0.05 Подробнее

ELECTRODE ASSEMBLIES, PLASMA GENERATING APPARATUSES, AND METHODS FOR GENERATING PLASMA

Electrode assemblies for plasma reactors include a structure or device for constraining an arc endpoint to a selected area or region on an electrode. In some embodiments, the structure or device may comprise one or more insulating members covering a portion of an electrode. In additional embodiments, the structure or device may provide a magnetic field configured to control a location of an arc endpoint on the electrode. Plasma generating modules, apparatus, and systems include such electrode assemblies. Methods for generating a plasma include covering at least a portion of a surface of an electrode with an electrically insulating member to constrain a location of an arc endpoint on the electrode. Additional methods for generating a plasma include generating a magnetic field to constrain a location of an arc endpoint on an electrode. 1. An electrode assembly for a plasma generating apparatus comprising: a tubular wall having an inner surface and an outer surface; and', 'an interior protrusion protruding from the tubular wall in a direction toward a longitudinal axis of the tubular wall, the interior protrusion including an edge extending along an intersection between at least two surfaces of the protrusion; and, 'an electrically conductive electrode body configured to provide an endpoint for an electrical arc, the electrically conductive electrode body comprisingat least one electrically insulating member disposed at least partially within the tubular wall of the electrode body, the at least one electrically insulating member covering at least a portion of the inner surface of the tubular wall and leaving exposed at least the edge of the interior protrusion.2. The electrode assembly of claim 1 , wherein the electrode body comprises:a first member comprising the tubular wall; anda separately formed second member comprising the interior protrusion, the second member positioned within and electrically coupled to the first member.3. The electrode assembly of claim 1 , ...

Laser Sustained Plasma Light Source With Electrically Induced Gas Flow

A laser sustained plasma light source includes a plasma bulb containing a working gas flow driven by an electric current sustained within the plasma bulb. Charged particles are introduced into the working gas of the plasma bulb. An arrangement of electrodes maintained at different voltage levels drive the charged particles through the working gas. The movement of the charged particles within the working gas causes the working gas to flow in the direction of movement of the charged particles by entrainment. The resulting working gas flow increases convection around the plasma and increases laser to plasma interaction. The working gas flow within the plasma bulb can be stabilized and controlled by control of the voltages present on the each of the electrodes. A more stable flow of working gas through the plasma contributes to a more stable plasma shape and position within the plasma bulb. 1. A laser sustained plasma light source , comprising:a laser operable to generate an amount of illumination light; anda plasma bulb having at least one wall operable in part to contain a working gas, wherein the illumination light generated by the laser is incident on the working gas and generates a laser sustained plasma emission;a first electrode configured to emit a plurality of charged particles into the working gas of the plasma bulb; anda second electrode configured to attract a portion of the plurality of charged particles and generate a flow of charged particles from the first electrode toward the second electrode, wherein the flow of charged particles generates a flow of the working gas through the laser sustained plasma.2. The laser sustained plasma light source of claim 1 , further comprising:a voltage source coupled to at least one electrode of the laser sustained plasma source, wherein the voltage source generates a voltage difference between at least two electrodes of the laser sustained plasma source.3. The laser sustained plasma light source of claim 2 , further ...

Device And Method For Quick Closing Of An Electric Circuit And A Use Of The Device

A device for quick closing of an electric circuit having a main spark gap with main electrodes and a triggering device. The triggering device has an auxiliary spark gap with auxiliary electrodes for igniting an arc in the main spark gap. The auxiliary electrodes are shielded from the main spark gap by a shielding unit having channel means extending therethrough from an auxiliary spark gap facing side to a main spark gap facing side of the shielding unit. The device further includes a nozzle with a first end being most close to the auxiliary spark gap and a second end most close to the main spark gap. The first end has an inlet opening that is in connection with the channel means and the second end has an outlet opening. The invention also relates to a corresponding method and to a use of the device. 1. A device for quick closing of an electric circuit , said device comprising a main spark gap provided with a first and a second main electrode and a triggering device , said triggering device comprising an auxiliary spark gap provided with a first and a second auxiliary electrodes for igniting an arc in the main spark gap , said auxiliary electrodes being shielded from said main spark gap by a shielding unit having channel means extending therethrough from an auxiliary spark gap facing side to a main spark gap facing side of the shielding unit , characterized in that the device further includes a nozzle with a first end being most close to the auxiliary spark gap and a second end most close to the main spark gap , which first end has an inlet opening that is in connection with said channel means and which second end has an outlet opening.2. The device according to claim 1 , characterized in that the nozzle at least partly is arranged in said channel means.3. The device according to claim 2 , characterized in that at least a part of the nozzle is formed by channel walls of the channel means.4. The device according to claim 1 , characterized in that a nozzle head portion ...

Magnetic advanced generation jet electric turbine

Supersonic Magnetic Advanced Generation Jet Electric Turbine (S-MAGJET) described herein, and a subsonic derivative, MAGJET, integrate a gas power turbine, superconducting electric power and propulsion generation, and magnetic power flux field systems along with an ion plasma annular injection combustor which utilizes alternative petroleum-based fuel and combustion cycles to create a hybrid turbine turbomachine for aerospace propulsion. The propulsion unit is able to achieve a dramatic increase in horsepower, combustion and propulsion efficiency, and weight reduction. In addition, the turbomachinery structures may be disposed within an exoskeleton architecture that achieves an increase in thrust to weight ratio with a concomitant increase in fuel efficiency and power generation. The engine continuously adjusts the temperature, pressure and mass airflow requirements using an electromagnetic power management system architecture. Engine performance may be controlled across the entire desired flight envelope, whether subsonic, transonic or supersonic flight conditions.

METHOD FOR PRETREATING SUBSTRATES FOR PVD METHODS

The invention relates to a method for coating work pieces in a vacuum treatment system having a first electrode embodied as a target, which is part of an arc vaporization source. Using the first electrode, an arc is operated with an arc current and vaporizes material. A bias voltage is applied to a bias electrode, which includes a second electrode that is embodied as a work piece holder, together with the work pieces. Metal ion bombardment is carried out either to pretreat the work pieces or in at least one transition from one layer to an adjacent layer of a multilayer system, so that neither a significant material removal nor a significant material buildup occurs, but instead, introduces metal ions into a substrate surface or into a layer of a multilayer system. 1. A method for coating work pieces in a vacuum treatment system having a first electrode embodied as a target , which is part of an arc vaporization source , comprising:using the first electrode, operating an arc with an arc current and vaporizing material, and applying a bias voltage to a bias electrode, wherein the bias electrode comprises a second electrode that is embodied as a work piece holder, together with the work pieces;pretreating the work pieces using metal ion bombardment so that neither a significant material removal nor a significant material buildup occurs, but instead, introducing metal ions into a substrate surface, with the introduced metal ions including ions of a metal that is a component of a layer to be applied; anddirectly depositing the layer onto the pretreated substrate surface.2. The method as recited in claim 1 , wherein the layer comprises at least one of the group consisting of a carbide layer claim 1 , an oxide layer claim 1 , and a nitride layer.3. The method as recited in claim 1 , wherein the layer has one or more metallic components.4. The method as recited in claim 3 , wherein the layer comprises at least one of the group consisting of Ti claim 3 , Al claim 3 , B claim ...

PVD PROCESSING APPARATUS AND PVD PROCESSING METHOD

A PVD processing apparatus and method capable of forming a composite coating having a coating thickness with excellent circumferential uniformity on an outer peripheral surface of a substrate. The PVD processing apparatus includes: a vacuum chamber; a revolving table revolving a plurality of substrates around an revolution axis in the vacuum chamber; a plurality of rotating tables rotating the substrates about their rotation axis parallel to the revolution axis on the revolution table; a plurality of types of targets provided radially outside the revolving table at circumferentially spaced positions; and a table rotating mechanism rotating the rotating table by an angle of 180° or more while the substrates passes through a region between two tangent lines drawn from a center of the target to an arc enveloping the rotating tables. 1. A PVD processing apparatus for performing coating formation on respective surfaces of a plurality of substrates , the PVD processing apparatus comprising:a vacuum chamber containing therein the plurality of substrates;a revolving table provided in the vacuum chamber and configured to support the plurality of substrates and to revolve the supported substrates around a revolution axis;a plurality of rotating tables configured to support respective substrates of the plurality of substrates and rotating the supported substrates, on the revolving table, about their respective rotation axes parallel to the revolution axis;a plurality of targets formed of respective different types of coating-formation materials, the targets disposed at respective positions circumferentially spaced on radial outside of the revolving table; anda table rotating mechanism for rotating each of the rotating tables about its rotation axis, the table rotating mechanism configured to rotate the rotating table, on which the substrate is placed, about its rotation axis by an angle of 180° or more relatively to the revolving table while the substrate passes through a ...

METHOD FOR THE COATING OF A SUBSTRATE

Method for the coating of a substrate (S) in a process chamber (), in which a gas atmosphere is set up and maintained in the process chamber () and an anode () and a cylindrical vaporization cathode () formed as a target () are provided in the process chamber (). The cylindrical vaporization cathode () includes the target material () and the target material () of the cylindrical cathode ( ) is transferred into a vapor phase by means of an electrical source of energy (). A magnetic field source () generates a magnetic field is provided in the process chamber () in such a way that, a magnetic field strength of the magnetic field can be changed in a preset region of the cylindrical vaporization cathode (), characterized in that a cylindrical sputtering cathode () and a cylindrical arc cathode () are simultaneously provided in the process chamber () and in that the substrate (S) is coated with an arc vaporization process and/or with a cathode sputtering process. 13366122122221223221222002012022002012022212277172881823221222212223. A method for the coating of a substrate (S) in a process chamber () , in which a gas atmosphere is set up and maintained in the process chamber () and an anode ( , ) and a cylindrical vaporization cathode ( , , ) formed as a target ( , , ) are provided in the process chamber () , the cylindrical vaporization cathode ( , , ) includes the target material ( , , ) and the target material ( , , ) of the cylindrical cathode ( , , ) is transferred into a vapor phase by means of an electrical source of energy ( , , ) , wherein a magnetic field source ( , , ) generating a magnetic field is provided in the process chamber () in such a way that , a magnetic field strength of the magnetic field can be changed in a preset region of the cylindrical vaporization cathode ( , , ) , characterized in that a cylindrical sputtering cathode ( , ) and a cylindrical arc cathode ( , ) are simultaneously provided in the process chamber () and in that the substrate (S) ...

ARC DISCHARGE GENERATION DEVICE AND FILM FORMATION METHOD

An arc discharge generation device energizes an evaporation source with the power supply device so that the evaporation source functions as a negative electrode to have a striker chip contact the evaporation source and then separate the striker chip from the evaporation source to generate an arc discharge in the chamber. When extinguishing the arc discharge generated in the chamber, the arc discharge generation device has the striker chip contact the evaporation source and de-energizes the evaporation source with the power supply device in a situation in which the striker chip is in contact with the evaporation source. 1. An arc discharge generation device comprising:an evaporation source located in a chamber;a striker configured to be movable in the chamber;an actuator that drives and moves the striker;a power supply device that energizes the evaporation source; anda controller that controls the actuator and the power supply device, whereinthe controller energizes the evaporation source with the power supply device so that the evaporation source functions as a negative electrode and controls the actuator to have the striker contact the evaporation source and then separate the striker from the evaporation source to generate an arc discharge in the chamber and emit ions from the evaporation source through the arc discharge, andwhen extinguishing the arc discharge generated in the chamber, the controller controls the actuator to have the striker contact the evaporation source and de-energize the evaporation source with the power supply device in a situation in which the striker is in contact with the evaporation source.2. The arc discharge generation device according to claim 1 , whereinthe striker includes a contact portion that contacts the evaporation source, andthe contact portion is formed from a sublimable material.3. The arc discharge generation device according to claim 2 , wherein a sublimation point of a material that forms the contact portion of the striker ...

Apparatus and Method for Generating Nitric Oxide in Controlled and Accurate Amounts

A nitric oxide generator generates nitric oxide from a mixture of nitrogen and oxygen such as air treated by a pulsating electrical discharge. The desired concentration of nitric oxide is obtained by controlling at least one of a frequency of the pulsating electrical discharge and duration of each electrical discharge pulse. 1a reaction chamber enclosing two electrodes separated by a gap,a gas inlet port for introducing a gas mixture containing oxygen and nitrogen into said reaction chamber,an electronic control circuit for delivering a pulsed DC electric discharge between the two said electrodes to generate nitric oxide;a magnetic field generator proximate to said gap between the electrodes; anda gas outlet port for delivering the gas mixture from said reaction chamber.. An apparatus for generating nitric oxide comprising: This application is a continuation of U.S. application Ser. No. 16/229,107, filed Dec. 21, 2018, which is a continuation of U.S. application Ser. No. 15/887,246, filed Feb. 2, 2018, which is a divisional of U.S. application Ser. No. 15/372,552, filed Dec. 8, 2016 (now U.S. Pat. No. 9,896,337, issued Feb. 20, 2018), which is a divisional of U.S. application Ser. No. 14/347,479, filed Mar. 26, 2014 (now U.S. Pat. No. 9,573,110, issued Feb. 21, 2017), which is a US National stage entry of International Application No. PCT/US2012/058564, which designated the United States and was filed on Oct. 3, 2012, published in English, which claims the benefit of U.S. Provisional Application No. 61/542,400, filed on Oct. 3, 2011.This application is also a continuation of U.S. application Ser. No. 16/375,410, filed Apr. 4, 2019, which is a continuation of U.S. application Ser. No. 15/887,246, filed Feb. 2, 2018, which is a divisional of U.S. application Ser. No. 15/372,552, filed Dec. 8, 2016 (now U.S. Pat. No. 9,896,337, issued Feb. 20, 2018), which is a divisional of U.S. application Ser. No. 14/347,479, filed Mar. 26, 2014 (now U.S. Pat. No. 9,573,110, issued ...

GENERATING ELECTRIC ARC, WHICH DIRECTLY AREALLY THERMALLY AND MECHANICALLY ACTS ON MATERIAL, AND DEVICE FOR GENERATING ELECTRIC ARC

A generating electric arc is disclosed herein, which thermally and mechanically acts on a material in such a manner that the electrical arc is shaped and guided by the action of a magnetic field and hydro-mechanical forces on the electrical arc. Generally, a substantial part of the electric arc acts directly and areally on a conductive and/or non-conductive material to be disrupted, a substantial part of the electric arc's heat flow is directed into the material to be disrupted, both electric arc roots move on the electrodes of a generator, and the electric arc has preferably a shape of a spiral. A device is also provided herein for generating an electric arc with thermal and mechanic action on a material containing axially symmetrical electrodes, i.e. an anode () and a cathode (), a spark gap (), nozzles () for the working medium flow, cooling media inlet and outlet (), electric power supply (), and ring-shaped magnets () whose section has the shape of a triangle. Typically, the anode () has the shape of the diffuser with an angular span from 5° to 130°. 14651279. A device for generating an electric arc with thermal and mechanic action on material , wherein the device comprises an axially symmetrical electrode assembly comprising an anode () having an angular span from 5° to 130°; a cathode (); nozzles () for a working medium flow; a cooling media inlet and an outlet (); an electric power supply comprising a spark gap () in a narrowed part of a diffuser; and ring-shaped magnets () having a triangular cross-section.21191146. The device for generating the electric arc according to characterized in that the device further contains permanent magnets () claim 1 , wherein the magnets () and the permanent magnets () are situated in the anode () and the cathode ().31617. The device for generating the electric arc according to characterized in that the device further contains electromagnets ( claim 1 , ) designed to create time-variable component of the magnetic field.4846. ...

FILM FORMING DEVICE

A film forming device includes a cylindrical evaporation source, closing members, and an auxiliary electrode. The cylindrical evaporation source is configured to accommodate a workpiece in an internal space of the cylindrical evaporation source. The cylindrical evaporation source is configured to discharge ions from the cylindrical evaporation source by arc discharge such that the ions are deposited on a surface of the workpiece. The closing members close the internal space. The auxiliary electrode is disposed along an inner wall surface of the cylindrical evaporation source. The auxiliary electrode is configured to be grounded or to be applied with a positive voltage such that electrons of the internal space flow to the auxiliary electrode. 1. A film forming device comprising:a cylindrical evaporation source configured to accommodate a workpiece in an internal space of the cylindrical evaporation source, the cylindrical evaporation source configured to discharge ions from the evaporation source by arc discharge such that the ions are deposited on a surface of the workpiece;closing members configured to close the internal space; andan auxiliary electrode disposed along an inner wall surface of the cylindrical evaporation source, the auxiliary electrode configured to be grounded or to be applied with a positive voltage such that electrons of the internal space flow to the auxiliary electrode.2. The film forming device according to claim 1 , whereinthe cylindrical evaporation source is a cathode, andthe closing members and the auxiliary electrode are anodes having an internal cooling structure.3. The film forming device according to claim 1 , whereinthe auxiliary electrode includes a gas passage which supplies process gas to the internal space.4. The film forming device according to claim 3 , whereinthe auxiliary electrode has a gas discharge hole of the gas passage near an arc spot of the cylindrical evaporation source such that the process gas is supplied to a ...

TA-C BASED COATINGS WITH IMPROVED HARDNESS

A substrate is coated with a multi-layer coating, comprising in order: (i) a first functional layer comprising ta-C, (ii) a second functional layer comprising ta-C, (iii) (a) a third functional layer comprising ta-C and a first intermediate layer comprising a carbide of a first element, or (b) a first intermediate layer comprising a carbide of a first element, and a second intermediate layer comprising the first element, wherein the ta-C has a hydrogen content less than 10% and an sp2 content less than 30%; wherein (i) the Young's modulus or (ii) the hardness or (iii) both the Young's modulus and the hardness independently stay the same or increase from layer to layer in (iii) (a) from the first intermediate layer to the first functional layer, or in (iii) (b) from the second intermediate layer to the first functional layer. 149-. (canceled)50. A substrate coated with a multi-layer coating , comprising in order from the outside towards the substrate:a first functional ta-C-containing layer of hardness 2000 HV or greater,a second functional ta-C-containing layer of hardness 1200 HV or greater,a first intermediate layer comprising tungsten carbide,a second intermediate layer comprising chromium tungstide, anda further intermediate layer comprising chromium and adjacent the substrate,{'sup': '2', 'wherein the ta-C has a hydrogen content less than 10% and an spcontent less than 30%;'}wherein the first functional layer has a hardness at least 200 HV greater than the second functional layer; andwherein (1) the Young's modulus or (2) the hardness or (3) both the Young's modulus and the hardness independently stay the same or increase from layer to layer from the second intermediate layer to the first functional layer.51. A coated substrate according to claim 50 , wherein the coating comprises one or more further functional layers comprising ta-C between the second functional layer and the first intermediate layer.52. A coated substrate according to claim 50 , wherein the ...

ARC EVAPORATION DEVICE

An arc evaporation device includes a bar-shaped target having a front end surface and a side surface to be melted and evaporated from the front end surface by arc discharge; an arc power supply; a target feed unit which moves the target axially and in a feed direction; an ignition rod capable of contact with the side surface of the target, in an intersecting direction intersecting the feed direction; a rotary actuator which moves the ignition rod along the intersecting direction from a retraction position apart from the side surface in the intersecting direction to make the ignition rod enter a transport region into which the target is fed; and a detection unit which detects whether or not the ignition rod has come into contact with the side surface of the target during movement of the ignition rod. 1. An arc evaporation device comprising:a bar-shaped target which has a front end surface as one end surface in an axial direction and a side surface extending in the axial direction, the side surface being continuous with a peripheral edge of the front end surface, the target being configured to be melted and evaporated from the front end surface thereof by arc discharge;an electrode for discharging between the electrode and the front end surface of the target;an arc power supply which applies a voltage between the target and the electrode to cause arc discharge between the front end surface and the electrode;a target feed unit which moves the target in a feed direction in which the front end surface advances and along the axial direction;a contact unit having a shape capable of making contact with the side surface of the target, at a predetermined position with respect to the feed direction, in an intersecting direction intersecting the feed direction;a contact-unit driving unit which moves the contact unit along the intersecting direction from a retraction position apart from the side surface in the intersecting direction, so as to make the contact unit enter a ...

COATED CUTTING TOOL AND A METHOD OF PRODUCING A COATED CUTTING TOOL

The present disclosure relates to a coated cutting tool including a substrate and a coating disposed on the substrate, wherein the coating includes a layer of TiZrAlN, where 0 Подробнее

ELECTRODE ARRANGEMENT FOR A PLASMA SOURCE FOR PERFORMING PLASMA TREATMENTS

In order to improve the etch depth and/or the etch homogeneity of a substrate, a plasma source with one or more evaporators and two or more electrodes according to the invention is proposed. The use of more than one electrode allows the use of different currents at the electrodes and a time-selective application of the currents, so that an improved control of the plasma generation is enabled. 1. A vacuum chamber for performing a plasma treatment comprising a plasma treatment area which is enclosed by chamber walls , and a plasma source comprising:a cathode for cathodic vacuum arc evaporation with an arc anode which is connected to the chamber, wherein the cathode is arranged in the chamber on the chamber wall;a shield for shielding particles and metal ions which are emitted from the cathode, wherein the shield is provided in the vacuum chamber in such a way that it can be arranged in front of the cathode;an electrode arranged in the chamber and spaced from the cathode;whereinthe electrode comprises a two-dimensional surface for collecting electrons emitted from the cathode, and in that the two-dimensional surface has a first orthogonal extension and a second orthogonal extension to a surface normal, wherein the first orthogonal extension is perpendicular to the second orthogonal extension, wherein a length ratio of the first orthogonal extension to the second orthogonal extension is between 0.1 and 1.2. The vacuum chamber according to claim 1 , wherein the length ratio of the first orthogonal extension to the second orthogonal extension is between 0.2 and 1 claim 1 , in particular between 0.4 and 1 claim 1 , especially at 1 and/or the two-dimensional surface area is in the range between 5 to 2000 cm claim 1 , in particular 25 to 320 cm claim 1 , and/or the electrode is arranged at least partially in the chamber wall.3. The vacuum chamber according to claim 1 , wherein the two-dimensional surface has a structuring claim 1 , wherein a ratio of a maximum depth of the ...

A MAGNET ARRANGEMENT FOR A PLASMA SOURCE FOR PERFORMING PLASMA TREATMENTS

In order to improve the etching depth and/or the etching homogeneity at a substrate, a plasma source with one or more single electrodes or one or more magnets is proposed. The magnet generates a magnetic field in the vicinity of the electrodes, which may be rear-side or front-side. 1. A vacuum chamber for performing a plasma treatment comprising a plasma treatment area which is enclosed by chamber walls , and a plasma source comprising:at least one cathode arranged in the vacuum chamber for cathodic vacuum arc evaporation with an arc anode which is connected to the vacuum chamber; a shield which can be arranged in front of the cathode;at least one electrode arranged in the vacuum chamber, wherein the electrode comprises a working surface for collecting the electrons emitted from the cathode;whereinthe working surface is a two-dimensional surface for collecting the electrons emitted from the cathode, and the two-dimensional surface has a first orthogonal extension and a second orthogonal extension to a surface normal, wherein the first orthogonal extension is perpendicular to the second orthogonal extension and a length ratio of the first orthogonal extension to the second orthogonal extension is between 0.1 and 1; andat least one magnet for generating a magnetic field which acts on the working surface of the electrode is arranged in, on or in and on the vacuum chamber.2. The vacuum chamber according to claim 1 , wherein the magnet comprises a front-side magnet and/or a rear-side magnet claim 1 , wherein the front-side magnet is arranged in the area of the working surface for generating a front-side magnetic field and the rear-side magnet is arranged behind the working surface for generating a rear-side magnetic field.3. The vacuum chamber according to claim 2 , wherein the front-side magnet is arranged in front of the working surface and/or the front-side magnet is arranged at least partially next to or around the working surface and/or wherein the front-side magnet ...

ROLL-TO-ROLL HYBRID PLASMA MODULAR COATING SYSTEM

The present invention relates to a roll-to-roll hybrid plasma modular coating system, which comprises: at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit, a metallic film and at least one substrate feeding unit. Each of the arc plasma processing unit is formed with a first chamber and an arc plasma source. Each of the magnetron sputtering plasma processing unit is formed with a second chamber and at least one magnetron sputtering plasma source. The metallic film is disposed in the arc plasma processing unit to avoid chamber wall being deposited by the arc plasma source; There are at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit and at least one winding/unwinding unit connected in series to lay at least one thin layer by arc plasma deposition or by magnetron sputtering plasma onto substrate material. 1. A roll-to-roll hybrid plasma modular coating system , comprising:at least one arc plasma processing unit, each formed with a first chamber and an arc plasma source for producing arc plasma that is housed inside the first chamber;at least one magnetron sputtering plasma processing unit, each formed with a second chamber and a magnetron sputtering plasma source for producing magnetron sputtering plasma that is housed inside the second chamber;a metallic film, disposed in the arc plasma processing unit to avoid deposition of target material on a wall in the deposition chamber; andat least one substrate feeding unit, for feeding a substrate, formed with a third chamber;whereas the at least one arc plasma processing unit, the at least one magnetron sputtering plasma processing unit and the at least one substrate feeding unit are connected in series to be used for depositing at least one thin layer by arc plasma deposition or at least one thin layer by magnetron sputtering plasma on a web substrate during the feeding of the web substrate.2. The roll-to-roll hybrid plasma modular ...

Method of Deposition of a Wear Resistant DLC Layer

A method of deposition of a wear resistant DLC layer onto substrates in a vacuum chamber from a graphite cathode by means of a low-voltage pulsed arc. Current pulses alternate with a holding current and a cathode spot moves on a surface of a graphite cathode. The motion of the cathode spot on the surface of the graphite cathode being steered by a magnetic field generated by a magnetic field source arranged under the surface of the graphite cathode. The value of the current pulses is 250 to 1000 A, the value of the holding current is 40 to 200 A, the frequency of the pulses is 100 to 5000 Hz and the pulse duty cycle is 1 to 90%, the intensity of the magnetic field in the place of the cathode spot being 5 to 40 mT. 1. A method of deposition of a wear resistant DLC layer onto substrates in a vacuum chamber from a rotary cylindrical graphite cathode using a low-voltage arc , comprising:alternating current pulses with a holding current to generate the low-voltage pulsed arc;moving a cathode spot on a surface of the graphite cathode, whilesteering the motion of the cathode spot on the surface of the graphite cathode by a magnetic field generated by a magnetic field source arranged under the surface of the graphite cathode, whereinthe value of the current pulses is at least 250 A, the value of the holding current is between 40 and 200 A, the frequency of the pulses is 100 to 5000 Hz, the pulse duty cycle is 1 to 90% and the intensity of the magnetic field in the place of the cathode spot is 5 to 40 mT.2. The method according to claim 1 , wherein the motion of the cathode spot on the surface of the graphite cathode is steered by the magnetic field along a path having a closed loop.3. (canceled)4. The method according to claim 1 , wherein the value of the current pulses is between 250 and 1000 A. The invention relates to a method of deposition of a wear resistant DLC layer onto substrates in a vacuum chamber from a graphite cathode by means of a low-voltage pulsed arc ...

Plasma spray systems and methods

Plasma spray systems comprise multiple zones wherein the energy required for different processes within the systems can be controlled independently. In some embodiments, a plasma spray system comprises a first zone wherein ionic species are generated from the target material using a first energy input, and the ionic species either combine to form a plurality of particles in the first zone, or form coatings on a plurality of input particles input into the first zone. The plasma spray system can further comprise a second zone, comprising a chamber coupled to a microwave energy source, which ionizes the plurality of particles to form a plurality of ionized particles and form a plasma jet. The plasma spray system can further comprise a third zone, comprising an electric field to accelerate the plurality of ionized particles and form a plasma spray.

Heat-Transfer Roller for Sputtering and Method of Making the Same

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

Thruster

A thruster comprising: a chamber to contain a fluid; a plurality of nozzles to exhaust neutral particles derived from the fluid in the chamber, wherein each nozzle has a converging section and the converging section includes a first electrode; a second electrode located distal to the first electrode to provide a voltage differential between the first and second electrodes sufficient to create plasma ions from the fluid and the voltage differential accelerates the plasma ions on a flow path through the converging section, and wherein at least one or more of the accelerated plasma ions are neutralised to form the neutral particles by charge exchange with other neutral particles, or by recombination with electrons, on the flow path. 1. A thruster comprising:a chamber to contain a fluid;a plurality of nozzles to exhaust neutral particles derived from the fluid in the chamber, wherein each nozzle has a converging section and the converging section comprises a first electrode;a second electrode located distal to the first electrode to provide a voltage differential between the first and second electrodes sufficient to create plasma ions from the fluid and the voltage differential accelerates the plasma ions on a flow path through the converging section, andwherein at least one or more of the accelerated plasma ions are neutralised to form the neutral particles by charge exchange with other neutral particles, or by recombination with electrons, on the flow path.2. A thruster according to claim 1 , wherein the plurality of nozzles are arranged in an array.3. A thruster according to claim 1 , wherein the array comprises a two-dimensional array with regular spacing between the plurality of nozzles.4. A thruster according to claim 1 , the thruster comprising a nozzle element having the plurality of nozzles in an array.5. A thruster according to claim 4 , wherein at least a portion of the nozzle element claim 4 , having the plurality of nozzles in an array claim 4 , is ...

METHOD OF MANUFACTURING COMPOUND FILM

An amount of nitrogen in a compound film is controlled. A method of manufacturing compound film comprising forming films laminated on a substrate placed at a film forming chamber is provided. According to the method of manufacturing compound film, a first compound layer including one or more elements selected from metal elements and semimetal elements and oxygen element and a second compound layer including one or more elements and nitrogen element are laminated alternately. The first compound layer is formed by a Filtered Arc Ion Plating method and the second compound layer is formed by a sputtering method. 1. A method of manufacturing a compound film on a substrate placed in a film forming chamber , the method comprising:forming on the substrate, by a Filtered Arc Ion Plating method, a first compound layer including oxygen and one or more elements selected from the group consisting of metal elements and semimetal elements; andforming on the substrate, by a sputtering method, a second compound layer including nitrogen and one or more elements selected from the group consisting of metal elements and semimetal elements.2. The method of claim 1 , whereina pressure in the film forming chamber when forming the first compound layer is less than a pressure in the film forming chamber when forming the second compound layer.3. The method of claim 1 , further comprising:controlling a proportion of oxygen and a proportion of nitrogen by changing a thickness ratio of a thickness of the first compound layer to a thickness of the second compound layer laminated alternately on the substrate, whereinthe proportion of oxygen is a number of atoms of the oxygen element with regards to a number of atoms of one or more of the elements included in the compound film, andthe proportion of nitrogen is a number of atoms of the nitrogen element with regards to a number of atoms of one or more of the elements included in the compound film.4. The method of claim 1 , further comprising: ...

DEPOSITION APPARATUS

A deposition apparatus comprises a target unit, an anode unit into which electrons emitted from the target unit flow, a striker configured to come into contact with the target unit to render the target unit and the anode unit conductive, so as to cause arc discharge between the target unit and the anode unit, a striker driving unit configured to drive the striker in one of a direction toward the target unit and a direction to retract from the target unit, a power supply unit configured to supply power to the target unit and the anode unit, and a control unit configured to control the striker driving unit and the power supply unit. The control unit supplies the power to the target unit and the anode unit after bringing the striker into contact with the target unit. 1. A deposition apparatus comprising:a target unit;an anode unit into which electrons emitted from the target unit flow;a striker configured to come into contact with the target unit to render the target unit and the anode unit conductive, so as to cause arc discharge between the target unit and the anode unit;a striker driving unit configured to drive the striker in one of a direction toward the target unit and a direction to retract from the target unit;a power supply unit configured to supply power to the target unit and the anode unit; anda control unit configured to control the striker driving unit and the power supply unit,wherein the control unit supplies the power to the target unit and the anode unit after bringing the striker into contact with the target unit.2. The deposition apparatus according to claim 1 , wherein the control unit causes the power supply unit to supply the power during a time until the striker that is in contact with the target unit changes to a non-contact state.3. The deposition apparatus according to claim 1 , wherein the control unit determines that the striker has come into contact with the target unit when a load on the striker exceeds a predetermined threshold.4. The ...

HARD FILM AND METHOD FOR FORMING SAME, AND DIE FOR USE IN HOT FORMING OF STEEL SHEET

Disclosed is a hard film based on tungsten carbide excellent in wear resistance, wherein the composition of the film is defined by WCM, where 0.01≦y≦0.2, 0.50≦x/(1−x−y)≦4.0, and M is one or more selected from Co, Ni, Fe and Cu. 17-. (canceled)8: A hard film based on tungsten carbide excellent in wear resistance , wherein the composition of the film is defined by WCM , where 0.01≦y≦0.2 , 0.50≦x/(1−x−y)≦4.0 , and M is one or more element(s) selected from the group consisting of Co , Ni , Fe and Cu.9: The hard film according to claim 8 , wherein the film is formed on an intermediate layer having a thickness of 1 μm or more consisting of a nitride claim 8 , a carbonitride or a carbide of one or more elements selected from the group consisting of Group 4 claim 8 , Group 5 claim 8 , Group 6 claim 8 , Al and Si formed on a surface of a substrate.10: The hard film according to claim 8 , wherein a metal layer is formed as a ground claim 8 , and the metal layer has a thickness of 50 nm or more consisting of one or more elements selected from the group consisting of Group 4 claim 8 , Group 5 claim 8 , Group 6 claim 8 , Al and Si.11: The hard film according to claim 9 , wherein the film is formed on a multilayered film laminated on the intermediate layer or the metal layer claim 9 , and the multilayered film is formed by alternately laminating a film consisting of one or more element(s) selected from the group consisting of W claim 9 , C claim 9 , Co claim 9 , Ni claim 9 , Fe and Cu claim 9 , and a film consisting of one or more elements selected from the group consisting of Group 4 claim 9 , Group 5 claim 9 , Group 6 claim 9 , Al and Si.12: The hard film according to claim 10 , wherein the film is formed on a multilayered film laminated on the intermediate layer or the metal layer claim 10 , and the multilayered film is formed by alternately laminating a film consisting of one or more element(s) selected from the group consisting of W claim 10 , C claim 10 , Co claim 10 , Ni ...

ION CONTROL FOR A PLASMA SOURCE

One embodiment is directed to an apparatus including a plasma source and operation electronics coupled to the plasma source. The plasma source includes at least two electrodes configured to generate plasma. The operation electronics are configured to generate plasma with the at least two electrodes and apply an ion flux modification bias to the at least two electrodes. 1. An apparatus comprising:a plasma source including at least two electrodes configured to generate plasma; generate plasma with the at least two electrodes; and', 'apply an ion flux modification bias to the at least two electrodes., 'electronics coupled to the plasma source, the electronics configured to2. The apparatus of claim 1 , wherein apply an ion flux modification bias includes apply a positive voltage to the at least two electrodes concurrently.3. The apparatus of claim 1 , wherein apply an ion flux modification bias includes apply a negative voltage to the at least two electrodes concurrently.4. The apparatus of claim 1 , wherein generate plasma includes alternate a first of the at least two electrodes between being biased as a cathode and being biased as an anode claim 1 , and alternate a second of the at least two electrodes between being biased as an anode and being biased as a cathode claim 1 , wherein the second electrode is biased as an anode while the first electrode is biased as a cathode and the second electrode is biased as a cathode while the first electrode is biased as an anode.5. The apparatus of claim 1 , wherein the electronics are configured to apply one or more ion flux modification biases after generating plasma claim 1 , and to repeat generating plasma and applying one or more ion flux modification biases one or more times.6. The apparatus of claim 1 , wherein the electronics include a switching unit coupled to the at least two electrodes claim 1 , and one or more direct current power supplies coupled to the switching unit.7. The apparatus of claim 1 , comprising:one or ...

ELECTRODE ASSEMBLY FOR PLASMA GENERATION

A hollow electrode assembly through which gas from a gas supply can pass and be effused across the casing of the electrode for supplying a gas for a plasma discharge. The gas passing the electrode goes from a higher gas pressure environment inside the electrode to a lower gas pressure environment on the outside of the electrode. The casing of the electrode through which the gas effuses can be a metal or metal allow which provides for a controlled flow of the gas through the wall. The flow rate of the gas can be controlled by one or more of the porosity of the metal or metal alloy used, the type of gas used, the pressure differential between the inside and outside of the electrode, and the temperature of the system. The electrode assembly can be used in and high temperature plasma generators. 1. An electrode apparatus for plasma generation comprising:a hollow electrode assembly connectable to a gas source, comprising,at least one conduit in the assembly for supplying gas under pressure to the inside of the assembly,a gas permeable membrane on the electrode for permitting gas from inside the assembly to effuse across the membrane for supply gas to a plasma discharge from the electrode.2. The electrode apparatus of claim 1 , wherein the electrode further comprises a plasma discharge head from which the plasma is discharged from the electrode.3. The electrode apparatus of claim 2 , wherein the head is composed of a pure element or alloy selected from the group consisting of nickel claim 2 , iron claim 2 , carbon claim 2 , molybdenum claim 2 , chromium claim 2 , vanadium claim 2 , silicon claim 2 , copper claim 2 , palladium claim 2 , platinum claim 2 , lithium claim 2 , aluminum claim 2 , carbon and combinations thereof.4. The electrode apparatus of claim 2 , wherein the geometry of the head is selected from the group consisting of a bulb claim 2 , sphere claim 2 , polyhedral claim 2 , tetrahedral claim 2 , octahedral claim 2 , and icosahedral.5. The electrode apparatus ...

VACUUM ARC DEPOSITION APPARATUS AND DEPOSITION METHOD

A vacuum arc deposition apparatus for forming a ta-C film on a substrate using arc discharge includes a holding unit that holds a target unit, an anode unit into which electrons emitted from the target unit flow, and a power supply that supplies, between the target unit and the anode unit, a current for generating a plasma by arc discharge. The current supplied by the power supply at the time of the arc discharge is generated by superimposing, on a DC current, a pulse current of a pulse frequency not higher than 140 Hz. 1. A vacuum arc deposition apparatus for forming a ta-C film on a substrate using arc discharge , the apparatus comprising:a holding unit that holds a target unit;an anode unit into which electrons emitted from the target unit flow; anda power supply that supplies, between the target unit and the anode unit, a current for generating a plasma by arc discharge,wherein the current supplied by the power supply at the time of the arc discharge is generated by superimposing, on a DC current, a pulse current of a pulse frequency not higher than 140 Hz.2. The vacuum arc deposition apparatus according to claim 1 , wherein the pulse frequency supplied by the power supply falls within a range of 20 Hz to 100 Hz.3. The vacuum arc deposition apparatus according to claim 1 , wherein the pulse frequency supplied by the power supply falls within a range of 50 Hz to 70 Hz.4. A vacuum processing apparatus comprising a vacuum arc deposition apparatus defined in .5. A deposition method of forming a ta-C film on a substrate using arc discharge caused by supplying a current between a target unit and an anode unit claim 1 , whereina current at the time of the arc discharge is generated by superimposing, on a DC current, a pulse current of a pulse frequency not higher than 140 Hz.6. The deposition method according to claim 5 , wherein the pulse frequency falls within a range of 20 Hz to 100 Hz.7. The deposition method according to claim 5 , wherein the pulse frequency falls ...

Target For ARC Processes

A target for the deposition of mixed crystal layers with at least two different metals on a substrate by means of arc vapor deposition (arc PVD), wherein the target includes at least two different metals. To produce mixed crystal layers which are as free as possible of macroparticles (droplets) according to the invention at least the metal with the lowest melting point is present in the target in a ceramic compound, namely as a metal oxide, metal carbide, metal nitride, metal carbonitride, metal oxynitride, metal oxycarbide, metal oxycarbonitride, metal boride, metal boronitride, metal borocarbide, metal borocarbonitride, metal borooxynitride, metal borooxocarbide, metal borooxocarbonitride, metal oxoboronitride, metal silicate or mixture thereof, and at least one metal different from the metal with the lowest melting point is present in the target in elemental (metallic) form. 1. A target for the deposition of mixed crystal layers with at least two different metals on a substrate by means of arc vapor deposition (arc PVD) , wherein the target includes at least two different metals , wherein at least the metal with the lowest melting point is present in the target in a ceramic compound , namely as a metal oxide , metal carbide , metal nitride , metal carbonitride , metal oxynitride , metal oxycarbide , metal oxycarbonitride , metal boride , metal boronitride , metal borocarbide , metal borocarbonitride , metal borooxynitride , metal borooxocarbide , metal borooxocarbonitride , metal oxoboronitride , metal silicate or mixture thereof , and at least one metal different from the metal with the lowest melting point is present in the target in elemental (metallic) form.2. A target according to wherein the at least two different metals in the target are selected from the group consisting of the elements scandium claim 1 , yttrium claim 1 , titanium claim 1 , zirconium claim 1 , hafnium claim 1 , vanadium claim 1 , niobium claim 1 , tantalum claim 1 , chromium claim 1 , ...

ARC-PLASMA FILM FORMATION DEVICE

An arc-plasma film formation device includes a film formation chamber in which a substrate to be treated is stored, a plasma chamber in which at least a part of a target is stored, the plasma chamber being configured to be connected to the film formation chamber, and a plurality of hollow coils configured to generate a continuous line of magnetic force between the target and the film formation chamber and having at least one curved section, the plurality of hollow coils being arrange in the plasma chamber and covered by an outer coat made of a non-magnetic metal. Plasma containing ions derived from the target material and generated in the plasma chamber as a result of arc discharge is transported from the target to the substrate by passing an inside of the plurality of hollow coils. 1. An arc-plasma film formation device comprising:a film formation chamber in which a substrate to be treated is stored;a plasma chamber in which at least a part of a target is stored, the plasma chamber being configured to be connected to the film formation chamber; anda plurality of hollow coils configured to generate a continuous line of magnetic force having at least one curved section between the target and the film formation chamber, the plurality of hollow coils being arranged in the plasma chamber and covered by an outer coat made of a non-magnetic metal,wherein plasma containing ions derived from the target material and generated inside the plasma chamber as a result of arc discharge is transported from the target to the substrate by passing through an inside of the plurality of hollow coils.2. The arc-plasma film formation device as recited in claim 1 ,wherein a coil section to which a current is supplied, a water-cooled tube through which cooling water flows, and a water-cooled plate to be cooled by the water-cooled tube are arrange inside the hollow coils, andwherein an inside of the hollow coils is filled with a resin having a thermal conductivity.3. The arc-plasma film ...

VACUUM COATING APPARATUS

A vacuum coating apparatus includes at least a chamber, an arc discharge plasma source, a feeding-reeling unit, and a roller set. The first and second openings are connecting with the feeding or reeling unit so as to allow the substrate to enter and leave the chamber therethrough, respectively. The arc discharge plasma source located inside the chamber generates the plasma, which discharges radially from the arc discharge plasma source as its center. The roller set includes a plurality of the first rollers, which are located in the chamber and enclosing the arc discharge plasma source. A first surface of the substrate is facing the plurality of the first rollers and contacts tightly on the periphery of the first rollers so that the first rollers can rotate by the moving of the substrate. The material evaporated and emitted by the plasma is attached onto the first surface of the substrate. 1. A vacuum coating apparatus , comprising:at least one feeding unit for feeding or reeling a substrate;at least one chamber, having a first opening and a second opening opposing to the first opening, the first opening and the second opening being connecting with the feeding and reeling unit respectively, the first opening and the second opening allowing the substrate to enter and leave at least one of the chambers, the substrate having a first surface and a second surface opposing to the first surface;at least one arc discharge plasma source, located inside the chamber to generate a plasma, which takes the arc plasma source as the center and radially discharges therefrom; anda roller set, having a plurality of first rollers mounted inside the chamber circling the arc discharge plasma source, the first surface of the substrate facing the plurality of the first rollers and contacting tightly at the plurality of the first rollers, the plurality of the first rollers being driven to rotate by the moving of the substrate, the evaporated material by the plasma being coated onto the first ...

METHOD TO FILTER MACRO PARTICLES IN A CATHODIC ARC PHYSICAL VAPOR DEPOSITION (PVD), IN VACUUM

A method to filter macro particles in a cathodic arc physical vapor deposition (PVD) in vacuum is described, said method comprising the step of evaporating a material from a solid source () by means of application of the arc on the source, forming a plasma comprising electrons, micro particles (vapor) and ions of evaporated material, together with macro particles larger in size than the micro particles and ions. The arc is moved on the source at a speed V(superficial speed) at which the electrons, the micro particles and the ions of material evaporated at a point Pdeviate, from a path towards a substrate () to be coated facing the source, the macro particles formed at a point Ppreviously passed over by the arc, so as to self-clean the plasma of the macro particles and allow condensation of only the cleaned plasma on the substrate. 114-. (canceled)15. A method to filter macro particles in a cathodic arc physical vapor deposition (“PVD”) in vacuum , the method comprising:evaporating a material from a solid source by application of a pulsed arc having pulses of a predetermined duration on the solid source;forming a plasma including electrons, micro particles, and ions of evaporated material, together with macro particles larger in size than the micro particles and the ions of evaporated material; wherein the evaporated material includes carbon; 'moving the pulsed arc on the solid source at a speed at which the electrons, the micro particles, and the ions of evaporated material evaporated at a point, propel from a path towards a substrate to be coated facing the solid source; the macro particles formed at a point previously passed over by the pulsed arc so as to self-clean the plasma of the macro particles and allow condensation of only the cleaned plasma on the substrate;', 'wherein application of the pulsed arc on the solid source includeswherein the pulsed arc has a pulse with a current greater than 300 A and focuses the plasma in absence of a magnetic system; ...

Deposition apparatus

A deposition apparatus comprises a source unit having a function of generating a plasma by an arc discharge; and a filter unit configured to transport the plasma generated by the source unit toward a material to be deposited, wherein the filter unit includes a duct configured to transport the plasma, a magnetic field formation unit configured to form, in the duct, a magnetic field for transporting the plasma, and a magnetic field bending unit configured to generate a magnetic force for bending the magnetic field formed by the magnetic field formation unit.

BIPOLAR ARC-COATING METHOD

An electric-arc evaporation method for coating surfaces, wherein at least two active consumption targets are used in the method, characterized in that the consumption targets are alternately connected as a cathode and an anode during the coating process. 1. An electric-arc evaporation method for coating surfaces , comprising:coating a surface using at least two active consumption targets alternately connected as a cathode and an anode during the coating process.2. The method according to claim 1 , comprising using at least one reactive gas in the method.3. The method according to claim 2 , wherein the at least one reactive gas comprises at least one constituent forming an electrically insulating compound with the target material.4. The method according to claim 2 , comprising using a mixture of gases claim 2 , wherein at least one gas is a non-reactive working gas.5. The method according to claim 1 , wherein the at least two different consumption targets differ in their composition claim 1 , and a buildup of a nanolayer multi-layer system occurs during coating.6. The method according to claim 1 , wherein the at least two active consumption targets may be disposed directly adjacent in such a manner that a plasma forming over a first target claim 1 , while a second target is operated as a cathode claim 1 , partially extends across the first target claim 1 , which at that point in time is operated as an anode.7. The method according to claim 1 , wherein claim 1 , over a total coating time t claim 1 , periods tto twith different lengths are used for respective modes of operation of the at least two consumption targets connected as a cathode or an anode.8. The method according to claim 7 , comprising using the periods to tto twith different lengths for the respective mode of operation of the at least two consumption targets connected claim 7 , as a cathode or an anode in a periodic sequence over the total coating time t.9. The method according to claim 1 , wherein the at ...

ARC EVAPORATION SOURCE

Provided is an arc evaporation source for melting and evaporating a cathode material by arc discharge for film formation on a surface of a substrate, and including a cathode formed in a substantially disc shape and a magnetic field generating apparatus, disposed at a back side of the cathode. The magnetic field generating apparatus generates a magnetic field which forms magnetic lines that form an acute angle with respect to a substrate direction at an outer circumferential surface of the cathode, magnetic lines that are substantially perpendicular to the discharge surface at an outermost circumference part of the discharge surface of the cathode, and magnetic lines that form an acute angle with respect to a center direction of the cathode at a region towards the outer circumferential surface of the discharge surface of the cathode, by at least one permanent magnet disposed at the back side of the cathode. 1. An arc evaporation source , for melting and evaporating a cathode material by arc discharge in a vacuum for film formation on a surface of a substrate , the arc evaporation source comprising:a cathode formed in a substantially disc shape; anda magnetic field generating apparatus disposed at a back side of the cathode,wherein the magnetic field generating apparatus generates a magnetic field which formsmagnetic lines that form an acute angle with respect to a substrate direction at an outer circumferential surface of the cathode,magnetic lines that are substantially perpendicular to a discharge surface at an outermost circumference part of the discharge surface of the cathode, andmagnetic lines that form an acute angle with respect to a center direction of the cathode at a region towards the outer circumferential surface of the discharge surface of the cathode, by at least one permanent magnet disposed at a back surface of the cathode such that the magnetic poles are oriented in a direction that is 20° to 50° with respect to the discharge surface of the cathode. ...

Apparatus and Method for Generating Nitric Oxide in Controlled and Accurate Amounts

A nitric oxide generator generates nitric oxide from a mixture of nitrogen and oxygen such as air treated by a pulsating electrical discharge. The desired concentration of nitric oxide is obtained by controlling at least one of a frequency of the pulsating electrical discharge and duration of each electrical discharge pulse. 1. A filter assembly connectable to a nitric oxide delivery apparatus comprising:an inlet filter port;an outlet filter port;a chamber extending between the inlet filter port and outlet filter port containing filter material that reduces nitrogen dioxide from a gas passing through the filter assembly;a memory device that stores data; anda memory device interface configured to connect the memory device to the nitric oxide delivery apparatus.2. The filter assembly of wherein the memory device interface is an electrical connector and the memory device is readable and programmable over the electrical connector by the nitric oxide delivery apparatus.3. The filter assembly of wherein the memory device stores a current filter capacity and is updated periodically as the filter capacity is consumed.4. The filter assembly of wherein the memory device contains a micro-controller.5. The filter assembly of wherein the memory device uses data encryption for storing and/or transmitting data to and from the nitric oxide apparatus.6. The filter assembly of wherein the memory device uses public key encryption for transmitting data to and from the memory device and the nitric oxide delivery apparatus.7. The filter assembly of wherein the memory device stores one or more parameters selected from the group consisting of:a desired dose setting of the nitric oxide apparatus,a desired gas flow rate setting of the nitric oxide apparatus,a desired treatment time,an initial filter capacity,a current filter capacity,alarm settings for the nitric oxide apparatus,hours the filter has been in use,hours the filter has left available, anda nitric oxide concentration and the gas ...

LOW-COST PLASMA REACTOR

An apparatus for vacuum plasma processing materials in a vacuum chamber composed primarily of carbonaceous polymer. The various components of the vacuum chamber can be formed by traditional polymer assembly techniques. The polymers may be electrically non-conductive to allow external placement of electrodes for either capacitive coupling, inductive coupling, or both. 1. A vacuum chamber of a plasma reactor , comprising a body , wherein the body is composed of a polymer material.2. The vacuum chamber of claim 1 , further comprising one or more ports to allow the entry of gases and monomers.3. The vacuum chamber of claim 1 , further comprising one or more conduits coupled to the body claim 1 , wherein the one or more conduits transfer a vacuum to the end of the conduit.4. The vacuum chamber of claim 3 , wherein one or more vacuum chamber conduits are formed from a polymer material.5. The vacuum chamber of claim 1 , wherein a coating is formed on the interior walls of the body claim 1 , wherein the coating layer inhibits molecular adsorption or absorption of unwanted species by the interior walls of the vacuum chamber.6. A plasma reactor comprising a vacuum chamber claim 1 , wherein the vacuum chamber comprises a body claim 1 , wherein the body is composed of a polymeric material.7. The plasma reactor of claim 6 , wherein the vacuum chamber further comprises one or more ports to allow the entry of gases and monomers.8. The plasma reactor of claim 6 , wherein the vacuum chamber further comprises one or more conduits coupled to the body claim 6 , wherein the one or more conduits transfer a vacuum to the end of the conduit.9. The plasma reactor of claim 8 , wherein one or more vacuum chamber conduits are formed from a polymer material.10. The plasma reactor of claim 6 , wherein a coating is formed on the interior walls of the vacuum chamber claim 6 , wherein the coating layer inhibits molecular adsorption or absorption of unwanted species by the interior walls of the ...

IMPROVED CATHODE ARC SOURCE

A cathode arc source comprises: a cathode target; a first magnetic field source located above the target; a second magnetic field source located below the target; and a third magnetic field source located between the first and second magnetic field sources and having an opposite polarity to the first magnetic field source; wherein the resultant magnetic field from the first, second and third magnetic field sources has zero field strength in a direction substantially normal to the target at a position above the target. The invention also provides methods of striking a cathode target and methods of depositing coatings which can be carried out using the cathode arc source described herein. 1. A cathode arc source comprising:a station for a cathode target;a first magnetic field source located above the target station;a second magnetic field source located below the target station; anda third magnetic field source located between the first and second magnetic field sources and having an opposite polarity to the first magnetic field source; characterised in that the resultant magnetic field from the first, second and third magnetic field sources has zero field strength in a direction substantially normal to the target station at a position of up to 10 cm above the target.2. A cathode arc source according to wherein the resultant magnetic field from the first claim 1 , second and third magnetic field sources has zero field strength in a direction substantially normal to the target station at a position of up to 8 cm above the target.3. A cathode arc source according to wherein the second magnetic field source has an opposite polarity to the first magnetic field source.4. A cathode arc source according to wherein the first claim 1 , second and/or third magnetic field sources are magnetic field generating coils.5. A cathode arc source according to wherein the strength of at least one of the first claim 1 , second and third magnetic field sources are adjustable.6. A cathode ...

Assembly and method of coating an interior surface of an object

A plasma deposition assembly for use in coating an interior surface of an object is provided. The assembly includes a head portion including an anode and a cathode adjacent to the anode. The cathode is fabricated from a coating material. The cathode also includes an outer surface adjacent to the interior surface of the object, wherein current is supplied to the cathode to form an arc on the outer surface such that the coating material is directed substantially radially outward from the outer surface of the cathode towards the interior surface of the object. The assembly also includes a moveable arm coupled to the head portion and configured to translate the head portion relative to the interior surface of the object as the arc deposits the coating material on the interior surface of the object.

SYSTEMS AND METHOD OF COATING AN INTERIOR SURFACE OF AN OBJECT

A system for use in coating an interior surface of an object is provided. The system includes a vacuum chamber enclosure defining an interior configured to receive the object, and a cathode coupled to the vacuum chamber enclosure. The cathode is fabricated from a coating material and has an outer surface. The cathode is configured such that when a current is applied to the cathode, an arc is formed on the outer surface and the coating material is removed from the cathode to form a cloud of coating material. The system also includes a collimator configured to be positioned between the cathode and the object configured to focus the cloud into a beam of coating material and to direct the beam towards the object, and a magnet configured to alter a path of the beam such that the beam is directed towards the interior surface of the object. 1. A system for use in coating an interior surface of an object , said system comprising:a vacuum chamber enclosure defining an interior configured to receive the object;a cathode coupled to said vacuum chamber enclosure, said cathode fabricated from a coating material and having an outer surface, said cathode configured such that when a current is applied to said cathode, an arc is formed on said outer surface and the coating material is removed from said cathode to form a cloud of coating material;a collimator configured to be positioned between said cathode and the object, said collimator configured to focus the cloud into a beam of coating material and to direct the beam towards the object; anda magnet configured to alter a path of the beam and to direct the beam towards the interior surface of the object.2. The system in accordance with claim 1 , wherein said magnet is configured to direct the path of the beam through an open end of the object and into an interior of the object.3. The system in accordance with claim 1 , wherein an orientation of said magnet is configured to be modified such that the beam impinges against the ...

SYSTEMS AND METHOD OF COATING AN INTERIOR SURFACE OF AN OBJECT

A system for use in coating an interior surface of an object is provided. The system includes a vacuum chamber enclosure defining an interior cavity configured to receive the object, an anode positioned within the interior cavity of the vacuum chamber enclosure, and a cathode positioned within the interior cavity of said vacuum chamber enclosure such that a space between the anode and the cathode is at least partially defined by the interior surface of the object. At least a portion of the cathode vaporizes when current is supplied thereto such that vaporized cathode material coats the interior surface of the object. 1. A system for use in coating an interior surface of an object , said system comprising:a vacuum chamber enclosure defining an interior cavity configured to receive the object;an anode positioned within said interior cavity of said vacuum chamber enclosure; anda cathode positioned within said interior cavity of said vacuum chamber enclosure such that a space between said anode and said cathode is at least partially defined by the interior surface of the object, wherein at least a portion of said cathode vaporizes when current is supplied thereto such that vaporized cathode material coats the interior surface of the object.2. The system in accordance with claim 1 , wherein at least one of said anode and said cathode are sized for insertion through an open end of the object and into an interior cavity of the object.3. The system in accordance with claim 2 , wherein a clearance is defined between the interior surface of the object and said at least one of said anode and said cathode when positioned in the interior cavity of the object.4. The system in accordance with further comprising an insulator extending over at least a portion of said cathode and configured to sustain electrical discharge on a face of said cathode when current is supplied to said cathode.5. The system in accordance with claim 4 , wherein said insulator defines an exposed portion of ...

ELECTRIC ARC APPARATUS FOR PROCESSING AN OPTICAL FIBER, AND RELATED SYSTEMS AND METHODS

An electric arc apparatus for processing an optical fiber includes one or more first electrodes and one or more second electrodes. The first electrode(s) each have an end portion that terminates at an opening defined by the first electrode(s). The opening is configured to accommodate the optical fiber extending along a longitudinal axis. The second electrode(s) each have an end portion that terminates at a location spaced from the opening defined by the first electrode(s). The first electrode(s) or second electrode(s) are configured to receive a voltage that generates a plasma field between the first electrode(s) and second electrode(s), which are shaped to focus the plasma field so that the plasma field extends across the longitudinal axis and modifies the end of the optical fiber. Methods of processing an optical fiber with an electric arc apparatus are also disclosed. 1. An electric arc apparatus for processing at least one optical fiber , comprising:one or more first electrodes each having an end portion that terminates at an opening defined by the one or more first electrodes, the opening being configured to accommodate the at least one optical fiber extending along a longitudinal axis; andone or more second electrodes each having an end portion that terminates at a location spaced from the opening defined by the one or more first electrodes;wherein the one or more first electrodes or one or more second electrodes are configured to receive a voltage that generates a plasma field between the one or more first electrodes and the one or more second electrodes, and further wherein the one or more first electrodes and the one or more second electrodes are shaped to focus the plasma field so that the plasma field extends across the longitudinal axis and modifies the end of the optical fiber.2. An electric arc apparatus according to claim 1 , wherein the end portion(s) of the one or more first electrodes each at least partially converges before terminating at the ...

METHOD FOR FABRICATING ELECTROCHROMIC DEVICE

The present invention discloses a method for fabricating an electrochromic device, which adopts the vacuum cathodic arc-plasma deposition to comprise five layers with an ionic conduction layer (electrolyte) in contact with an electrochromic (EC) layer and an ion storage (complementary) layer, all sandwiched between two transparent conducting layers sequentially on a substrate. The method owns superior deposition efficiency and the fabricated thin film structures have higher crystalline homogeneity. In addition, thanks to the nanometer pores in the thin film structures, the electric capacity as well as the ion mobility are greater. Consequently, the reaction efficiency for bleaching or coloring is enhanced. 1. A method for fabricating electrochromic device , comprising steps of:depositing a first transparent electrode having a plurality of island structures on a substrate using vacuum cathodic arc-plasma deposition;depositing an ion storage layer having a plurality of first pore structures on said first transparent electrode using vacuum cathodic arc-plasma deposition;depositing an ion transport layer having a plurality of second pore structures on said ion storage layer using vacuum cathodic arc-plasma deposition;injecting lithium ions or hydrogen ions into said ion storage layer via said ion transport layer using a liquid solution immersion method;depositing an electrochromic layer having a plurality of third pore structures on said ion transport layer using vacuum cathodic arc-plasma deposition; anddepositing a second transparent electrode on said electrochromic layer using vacuum cathodic arc-plasma deposition.2. The method for fabricating electrochromic device of claim 1 , wherein the material of said first transparent electrode and said second transparent electrode is selected from the group consisting of gallium zinc oxide (GaZnO) claim 1 , indium tin oxide (ITO) claim 1 , and indium zinc tin oxide (IZTO).3. The method for fabricating electrochromic device of ...

WATER/WASTEWATER RECYCLE AND REUSE WITH PLASMA, ACTIVATED CARBON AND ENERGY SYSTEM

The present invention provides a system that includes a glow discharge cell and a plasma arc torch. A first valve is connected to a wastewater source. An eductor has a first inlet, a second inlet and an outlet, wherein the first inlet is connected to the outlet of the electrically conductive cylindrical vessel, the second inlet is connected to the first valve, and the outlet is connected to the tangential inlet of the plasma arc torch. A second valve is connected between the tangential outlet of the plasma arc torch and the inlet of the glow discharge cell, such that the plasma arc torch provides the electrically conductive fluid to the glow discharge cell and the glow discharge cell provides a treated water via the outlet centered in the closed second end. 1. A system comprising: an electrically conductive cylindrical vessel having a first end and a closed second end, an inlet proximate to the first end, and an outlet centered in the closed second end,', 'a hollow electrode aligned with a longitudinal axis of the electrically conductive cylindrical vessel and extending at least from the first end into the electrically conductive cylindrical vessel, wherein the hollow electrode has an inlet and an outlet,', 'a first insulator that seals the first end of the electrically conductive cylindrical vessel around the hollow electrode and maintains a substantially equidistant gap between the electrically conductive cylindrical vessel and the hollow electrode, and', 'a non-conductive granular material disposed within the substantially equidistant gap, wherein the non-conductive granular material allows an electrically conductive fluid to flow between the electrically conductive cylindrical vessel and the hollow electrode, and the combination of the non-conductive granular material and the electrically conductive fluid prevents electrical arcing between the cylindrical vessel and the hollow electrode during an electric glow discharge;, 'a glow discharge cell comprising a ...

GLOW DISCHARGE LAMP

The disclosure includes a glow-discharge lamp including: an elongate casing transparent to illuminating radiation and containing a plasma gas; a device for applying an electric field for maintaining a plasma in the so-called positive column region of the casing, the device including two electrodes forming an anode and a cathode located in the casing at each end thereof; and a radio-frequency or microwave cathode plasma source arranged in the casing in relation to the cathode-forming electrode, such as to generate a high-frequency discharge located on the surface of the electrode in order to generate the plasma. The disclosure also includes a lighting method of such a glow-discharge lamp. 1. A glow discharge lamp comprising:an elongated envelope, transparent to lighting radiation and containing a plasma gas;a device for applying an electric field suitable for maintaining a plasma in the region of the envelope called a positive column, including two electrodes constituting an anode and a cathode situated in the envelope, at each end of the envelope; anda microwave or radio-frequency cathode plasma source positioned in the envelope relative to the electrode constituting the cathode so as to generate a localized high-frequency discharge on the surface of the electrode to generate the plasma.2. The lamp of claim 1 , which is supplied with a periodic voltage at 50 Hz or 60 Hz claim 1 , the lamp further comprising two cathode plasma sources situated in the envelope relative to each of the two electrodes so as to generate a localized radio-frequency or microwave plasma at the surface of each of the electrodes.3. The lamp of claim 1 , wherein each cathode plasma source is an inductive radio-frequency source.4. The lamp of claim 1 , wherein each cathode plasma source is a microwave source.5. The lamp of claim 1 , wherein the pressure inside the envelope is less than 10 torr (1330 Pa).6. The lamp of claim 5 , wherein each cathode plasma source is an inductive radio-frequency ...

SURFACE-COATED CUTTING TOOL

To improve the adhesion resistance and wear resistance of a surface-coated cutting tool. The surface-coated cutting tool includes a tool substrate, and a single-component coating layer composed of a composite nitride of Cr (chromium), Al (aluminum), and V (vanadium) and disposed on the surface of the tool substrate. The composite nitride is characterized by being represented by a compositional formula: CrAlVN satisfying the following relations: 2. A surface-coated cutting tool according to claim 1 , wherein the single-component coating layer has both a hexagonal phase and a cubic phase.3. A surface-coated cutting tool according to claim 2 , wherein the single-component coating layer exhibits a peak intensity ratio (IA/IB) of 1.5 or more and 5.8 or less as determined by X-ray diffractometry claim 2 , whereinIA represents the peak intensity of (111) plane of the cubic phase, andIB represents the peak intensity of (100) plane of the hexagonal phase.4. A surface-coated cutting tool according to claim 3 , wherein the single-component coating layer exhibits a peak intensity ratio (IA/IC) of 0.9 or more as determined through X-ray diffractometry claim 3 , whereinIC represents the peak intensity of (200) plane of the cubic phase.5. A surface-coated cutting tool according to claim 2 , wherein the single-component coating layer exhibits a peak intensity ratio (IA/IC) of 0.9 or more as determined through X-ray diffractometry claim 2 , whereinIC represents the peak intensity of (200) plane of the cubic phase. The present invention relates to a surface-coated cutting tool.A known surface-coated cutting tool (see Patent Document 1) includes a substrate, and multiple layers (i.e., an inner layer and an outer layer) disposed on the substrate. The inner layer is formed of a compound (mainly a cubic-crystal compound) containing at least Al, at least one element of Cr and V, and one or more elements selected from among nitrogen, carbon, and oxygen. The outer layer is formed of a ...

Apparatus and Method for Generating Nitric Oxide in Controlled and Accurate Amounts

A nitric oxide generator generates nitric oxide from a mixture of nitrogen and oxygen such as air treated by a pulsating electrical discharge. The desired concentration of nitric oxide is obtained by controlling at least one of a frequency of the pulsating electrical discharge and duration of each electrical discharge pulse. 1. (canceled)2. An apparatus comprising:an inlet configured to receive a reactant gas containing nitrogen and oxygen;an outlet configured to provide a product gas containing nitric oxide, wherein the product gas is formed by a synthesis of the reactant gas;a reaction chamber arranged between the inlet and the outlet;one or more pairs of electrodes within the reaction chamber and configured to initiate a series of electric arcs to synthesize the reactant gas to the product gas;a sensor configured to measure a flow of a gas in a ventilator into which the product gas is provided through the outlet; anda controller in communication with the one or more pairs of electrodes and the sensor, the controller being configured to:adjust at least one of energy generated by the one or more pairs of electrodes, arc frequency, arc current, and a voltage supplied to the one or more pairs of electrodes based on the measured flow to control a concentration of nitric oxide in the product gas.3. The apparatus of claim 2 , wherein the one or more pairs of electrodes include a noble metal.4. The apparatus of claim 2 , further comprising a filter arranged upstream of the inlet.5. The apparatus of claim 2 , wherein the controller adjusts the at least one of a pulse width claim 2 , pulse period claim 2 , pulse count per pulse group claim 2 , pulse groups per second claim 2 , energy generated by the one or more pairs of electrodes claim 2 , arc frequency claim 2 , arc current claim 2 , and a voltage to minimize a concentration of NOin the product gas.6. The apparatus of claim 2 , wherein the controller controls the nitric oxide concentration of the product gas with the ...

COATED CUTTING TOOL AND PRODUCTION METHOD THEREFOR

Provided is a coated cutting tool having a base material side single layer portion and a laminated portion provided as a hard coating in order from a base material side. The base material side single layer portion is formed of a nitride-based hard coating in which a proportion of Al is highest among metal (including metalloid) elements, a sum of Al and Cr in a content ratio (atomic ratio) is 0.9 or more, and at least B is contained. In the laminated portion, a nitride-based a layer in which a proportion of Ti is highest among metal (including metalloid) elements and at least B is contained, and a nitride-based b layer in which a proportion of Al is highest among metal (including metalloid) elements and at least Cr and B are contained are alternately laminated. 1. A coated cutting tool having a hard coating on a base material ,wherein a base material side single layer portion and a laminated portion are provided as the hard coating in order from a base material side,the base material side single layer portion is formed of a nitride-based hard coating in which a proportion of Al is highest among metal (including metalloid) elements, a sum of Al and Cr in a content ratio (atomic ratio) is 0.9 or more, and at least B is contained,in the laminated portion, a nitride-based a layer in which a proportion of Ti is highest among metal (including metalloid) elements and at least B is contained, and a nitride-based b layer in which a proportion of Al is highest among metal (including metalloid) elements and at least Cr and B are contained are alternately laminated,a lamination period of the a layer and the b layer in a coating thickness direction is 5 to 100 nm, andan X-ray diffraction pattern of a portion formed of the base material side single layer portion and the laminated portion has a single fcc structure.2. The coated cutting tool according to claim 1 ,{'b': '1', 'wherein a coating thickness (t) of the base material side single layer portion is 1.0 to 5 μm,'}{'b': '2', ' ...

Plasma Spark Discharge Reactor and Durable Electrode

A plasma spark discharge reactor for treating water. The plasma spark discharge reactor comprises a HV electrode with a head and ground electrode that surrounds at least a portion of the HV electrode. A passage for gas may pass through the reactor to a location proximate to the head to provide controlled formation of gas bubbles in order to facilitate the plasma spark discharge in a liquid environment. 1. A plasma spark discharge reactor comprising:a HV electrode having a head;a ground electrode surrounding at least a portion of the HV electrode; anda gas passage extending to an outlet at a location proximate to the head of the HV electrode.2. The plasma spark discharge reactor of claim 1 , wherein the HV electrode and the ground electrode are co-axial.3. The plasma spark discharge reactor of claim 1 , wherein the gas passage extends longitudinally through the HV electrode.4. The plasma spark discharge reactor of claim 1 , wherein the gas passage extends longitudinally in an area between the ground electrode and the HV electrode.5. The plasma spark discharge reactor of claim 1 , further comprising an insulator.6. The plasma spark discharge reactor of claim 5 , wherein the gas passage extends longitudinally through the insulator.7. The plasma spark discharge reactor of claim 1 , wherein the reactor further comprises a side passage fluidly connected to the gas passage and the side passage extends at an angle from the gas passage to an outlet proximate to the head of the HV electrode.8. The plasma spark discharge reactor of claim 1 , wherein the reactor further comprises a plurality of side passages fluidly connected to the gas passage and the side passages each extend at an angle from the gas passage to an outlet proximate to the head of the HV electrode.9. The plasma spark discharge reactor of claim 1 , wherein the HV electrode and ground electrode are oriented substantially vertically.10. The plasma spark discharge reactor of claim 1 , wherein the head of the HV ...

PLASMA GENERATOR

In a plasma generator, a reaction chamber is divided into a pair of insertion portions, for inserting a pair of electrodes, and a connecting segment that connects the pair of insertion portions. The connecting segment is narrower than the pair of insertion portions. Since the connecting segment is narrower than the insertion portions, the volume of the connecting segment is small. Accordingly, the process gas having a small volume is converted into plasma over the entire region of the connecting segment and along the wall surfaces that are continuous from each insertion portion to the connecting segment, thereby enabling the process gas to be converted to plasma efficiently. Further, the junctures of each of the pair of insertion portions and the connecting segment are smooth surfaces. As a result, heat from discharging is dispersed over the entire smooth surface, thereby suppressing carbonization from discharging. 14.-. (canceled)5. A plasma generator , comprising:a first block having a reaction chamber,a pair of electrodes inserted into the reaction chamber for converting a process gas into plasma in the reaction chamber, anda nozzle for ejecting the gas, converted to plasma in the reaction chamber, toward a process target,wherein the reaction chamber is divided into a pair of first insertion portions, for inserting the pair of electrodes, and a first connecting segment narrower than the pair of first insertion portions, and junctures of each of the pair of first insertion portions with the first connecting segment are smooth surfaces.6. The plasma generator according to claim 5 , whereinthe nozzle has a slit-shaped nozzle port, and the plasma generator includes a plate-like member, being disposed between the first block and the nozzle, having a plurality of communication holes that enable communication between the reaction chamber and the nozzle port.7. The plasma generator according to claim 5 , wherein (a) a pair of second insertion portions communicating with ...

Apparatus and Method for Generating Nitric Oxide in Controlled and Accurate Amounts

A nitric oxide generator generates nitric oxide from a mixture of nitrogen and oxygen such as air treated by a pulsating electrical discharge. The desired concentration of nitric oxide is obtained by controlling at least one of a frequency of the pulsating electrical discharge and duration of each electrical discharge pulse. 1. (canceled)2. A nitric oxide generation system , comprising:a plasma chamber including two electrodes configured to generate a product gas containing nitric oxide using a flow of a reactant gas through the plasma chamber;a controller configured to regulate the amount of nitric oxide generated in the product gas by the two electrodes in the plasma chamber using one or more parameters as input to a control algorithm, at least one of the one or more parameters being related to the flow rate of the reactant gas into the plasma chamber;in input for connection to an external a pressurized reactant gas source to provide reactant gas to the plasma chamber;a control valve positioned between the reactant gas source and the plasma chamber and configured to provide a flow of the reactant gas from the reactant gas source based on a measurement associated with a medical gas into which the product gas flows; and{'sub': '2', 'a filter configured to remove NOfrom the product gas generated by the plasma chamber,'}wherein the concentration of NO in the combined product gas and medical gas is a target value.3. The nitric oxide generation system of claim 2 , wherein the measurement associated with the medical gas is the flow rate of the medical gas such that the air flow of the reactant gas through the plasma chamber is proportional to the flow rate of the medical gas.4. A nitric oxide generation system claim 2 , comprising:a plasma chamber including two electrodes configured to generate a product gas containing nitric oxide using a flow of a reactant gas through the plasma chamber;a controller configured to regulate the amount of nitric oxide generated in the ...

PVD SYSTEM WITH REMOTE ARC DISCHARGE PLASMA ASSISTED PROCESS

An arc coating system includes a coating chamber having a peripheral chamber wall, a top wall, and a bottom wall. The peripheral chamber wall, the top wall, and the bottom wall define a coating cavity and a chamber center. A plasma source is positioned at the chamber center wherein the plasma source comprises a central cathode rod and a plurality of cathode rods surrounding the central cathode rod. The coating system also includes a sample holder that holds a plurality of substrates to be coated. Characteristically, the sample holder rotatable about the chamber center at a first distance from the chamber center. 1. A coating system comprising:a coating chamber having a peripheral chamber wall, a top wall, and a bottom wall, the peripheral chamber wall, the top wall, and the bottom wall defining a coating cavity and a chamber center;a plasma source positioned at the chamber center wherein the plasma source comprises a central cathode rod and a plurality of cathode rods surrounding the central cathode rod; anda sample holder that holds a plurality of substrates to be coated, the sample holder rotatable about the chamber center at a first distance from the chamber center.2. The coating system of further comprising a central coil surrounding the central cathode rod.3. The coating system of further comprising at least one remote anode positioned at a second distance from the chamber center proximate to the peripheral chamber wall.4. The coating system of wherein the plurality of cathode rods includes 1 to 10 rod-shaped cathodes having a longitudinal axis aligned parallel to the peripheral chamber wall.5. The coating system of wherein each cathode rod in the plurality of cathode rods are rotatable about the longitudinal axis.6. The coating system of further comprising a plurality of blocking shields such that a blocking shield is positioned between alternating pairs of cathode rods in the plurality of cathode rods.7. The coating system of further comprising a first ...

PLASMA CORRIDOR FOR HIGH VOLUME PE-CVD PROCESSING

A coating system includes a coating chamber having a peripheral chamber wall, a top wall, and a bottom wall. The peripheral chamber wall defines a chamber center. A plasma source is positioned at the chamber center. The coating system also includes a sample holder that holds a plurality of substrates to be coated which is rotatable about the chamber center at a first distance from the chamber center. A first isolation shield is positioned about the chamber center at a second distance from the chamber center, the first isolation shield being negatively charged. 1. A coating system comprising:a coating chamber having a peripheral chamber wall, a top wall, and a bottom wall, the peripheral chamber wall defining a chamber center;a plasma source positioned at the chamber center;a sample holder that holds a plurality of substrates to be coated, the sample holder rotatable about the chamber center at a first distance from the chamber center; anda first isolation shield positioned about the chamber center at a second distance from the chamber center, the first isolation shield being negatively charged.2. The coating system of further comprising at least one remote anode positioned at a third distance from the chamber center that is greater than the first distance and the second distance.3. The coating system of wherein the first isolation shield is a metal mesh screen.4. The coating system of wherein the second distance is greater than the first distance.5. The coating system of further comprising a second isolation shield positioned at a fourth distance from the chamber center that is less than the first distance.6. The coating system of wherein the first isolation shield is an outer metal mesh screen and the second isolation shield is an inner metal mesh screen.7. The coating system of wherein substrates are bias to the same potential as the inner metal mesh screen.8. The coating system of wherein the outer metal mesh screen and the inner metal mesh screen have openings ...

ENHANCED CATHODIC ARC SOURCE FOR ARC PLASMA DEPOSITION

An improved cathodic arc source and method of DLC film deposition with a carbon containing directional-jet plasma flow produced inside of cylindrical graphite cavity with depth s of the cavity approximately equal to the cathode diameter. The generated carbon plasma expands through the orifice into ambient vacuum resulting in plasma flow strong self-constriction. The method represents a repetitive process that includes two steps: the described above plasma generation/ deposition step that alternates with a recovery step. This step provides periodical removal of excessive amount of carbon accumulated on the cavity wall by motion of l o the cathode rod inside of the cavity in direction of the orifice. The cathode rod protrudes above the orifice, and moves back to the initial cathode tip position. The said steps periodically can be reproduced until the film with target thickness is deposited. Technical advantages include the film hardness, density, and transparency improvement, high reproducibility, long duration operation, and particulate reduction. 111-. (canceled)12. An apparatus for generation of directional carbon containing plasma flow in a cathodic arc source comprising:a cylindrical graphite cathode rod and an anode formed from of a plurality of spaced baffles, wherein the cylindrical graphite cathode rod and the anode are separated by an annular shaped shield, the shield further including an insulator tube with thin wall graphite bushing inlaid inside of the insulator tube that coaxially surrounds at least a portion of the cathode rod;a bent solenoidal magnetic filter following the cathodic arc source; anda graphite cavity formed by extending the shield from a top surface of the cathode rod, thereby creating a semi-confined space with a cavity orifice at least partially shaped identical to a shape of the top surface of the cathode rod.13. The apparatus of claim 12 , wherein the cathodic arc source further comprising a mechanism configured to selectively move ...

MAGNETIC FILTER TUBE

The present invention discloses a magnetic filter tube, and relates to the technical field of magnetic filters. The magnetic filter tube includes a first rectangular tube and a second rectangular tube, where one end of the first rectangular tube is fixedly connected to one end of the second rectangular tube; the other end of the first rectangular tube forms an inlet of the magnetic filter tube; the inlet of the magnetic filter tube is connected with a cathode target flange; the other end of the second rectangular tube forms an outlet of the magnetic filter tube; the outlet of the magnetic filter tube is connected with a vacuum chamber; an inner wall of the first rectangular tube and an inner wall of the second rectangular tube are each provided with a protrusion and a groove; the protrusion is filled with cold water. 1. A magnetic filter tube , comprising a first rectangular tube and a second rectangular tube , wherein a first end of the first rectangular tube is fixedly connected to a first end of the second rectangular tube; a second end of the first rectangular tube forms an inlet of the magnetic filter tube; the inlet of the magnetic filter tube is connected with a cathode target flange; a second end of the second rectangular tube forms an outlet of the magnetic filter tube; the outlet of the magnetic filter tube is connected with a vacuum chamber; an inner wall of the first rectangular tube and an inner wall of the second rectangular tube are each provided with a protrusion and a groove; the protrusion is filled with cold water.2. The magnetic filter tube according to claim 1 , wherein the first rectangular tube and the second rectangular tube are each a copper tube.3. The magnetic filter tube according to claim 1 , wherein there are a plurality of protrusions and a plurality of grooves; each protrusion of the plurality of protrusions is spaced apart from an adjacent groove of the plurality of grooves by 2-10 mm.4. The magnetic filter tube according to claim 1 ...

METHOD OF PRODUCING AN ANTI-WEAR LAYER AND ANTI-WEAR LAYER PRODUCED BY MEANS OF SAID METHOD

The invention relates to the production of wear-resistant layers which are exposed to friction wear on surfaces of components of internal combustion engines. In the process, wear-resistant layers are formed on the respective surface by electric arc discharge under vacuum conditions. The wear-resistant layers are formed from at least approximately hydrogen-free tetrahedrally amorphous (ta-C) comprising a mixture of sp2 and sp3 hybridized. carbon and have a microhardness of at least 3500 HV and an arithmetical mean roughness value Ra of 0.1 μm without a mechanical, physical and/or chemical surface processing taking place. 161014. A method of producing wear-resistant layers on surfaces of components of internal combustion engines which are exposed to frictional wear , wherein a plasma is formed by means of pulse-operated laser radiation from sequentially ignited electrical arc discharges under vacuum conditions , wherein the electrical arc discharge is operated between an anode () and a cathode () of graphite and ionized parts of the plasma are deposited. on a surface of at least one component () as a layer which is formed from at least approximately hydrogen-free tetrahedrally amorphous (ta-C) comprising a mixture of sp2 and sp3 hybridized carbon , wherein{'b': 14', '6', '5', '5', '6, 'the plasma by means of an absorber electrode positively charged ions of the plasma are deflected in the direction of the at least one component () and in this respect at least approximately the same electric voltage is applied at the anode () and at the absorber electrode () and while the electrical arc discharges are operated and an electric current flows through the absorber electrode () which is at least 1.5 times greater than the electric current which flows through the anode (), and'}{'b': '14', 'no mechanical and/or chemical machine finishing of the coated surface of the at least one component () is carried out which leads to a smoothing of the surface.'}256. A method in ...

Adjustable non-dissipative voltage boosting snubber network for achieving large boost voltages

This disclosure describes a non-dissipative snubber circuit configured to boost a voltage applied to a load after the load's impedance rises rapidly. The voltage boost can thereby cause more rapid current ramping after a decrease in power delivery to the load which results from the load impedance rise. In particular, the snubber can comprise a combination of a unidirectional switch, a voltage multiplier, and a current limiter. In some cases, these components can be a diode, voltage doubler, and an inductor, respectively.

LIQUID TREATMENT APPARATUS INCLUDING FIRST ELECTRODE, SECOND ELECTRODE, AND FIRST AND SECOND INSULATORS SURROUNDING LATERAL SURFACE OF FIRST ELECTRODE

A liquid treatment apparatus includes a liquid storing vessel, a first electrode, a second electrode at least partly arranged inside the vessel, a tubular first insulator surrounding a first-electrode lateral surface with a first space interposed therebetween, and including a first opening in an end surface in contact with the liquid, a tubular second insulator surrounding the first-electrode lateral surface inside the first insulator, a gas supply device supplying gas into the first space and ejecting the gas into the liquid through the first opening, and a power supply applying a voltage between the first and second electrodes and producing plasma. The second insulator is arranged with a second space interposed between the first and second insulators. Portions of the first and second insulators, those portions being positioned inside the vessel, are covered with the gas when the gas is supplied into the first space by the gas supply device. 1. A liquid treatment apparatus comprising:a vessel for storing a liquid;a first electrode;a second electrode at least a part of which is arranged inside the vessel;a first insulator having a tubular shape and a first opening at an end of the first insulator, the first insulator surrounding a lateral surface of the first electrode with a first space interposed between the first insulator and the lateral surface of the first electrode;a second insulator having a tubular shape, the second insulator surrounding the lateral surface of the first electrode;a gas supply device that supplies gas into the first space and ejects the gas into the liquid through the first opening; anda power supply that applies a voltage between the first electrode and the second electrode and produces plasma, wherein:the first insulator surrounds the second insulator, the second insulator is arranged with a second space interposed betweenthe first insulator and the second insulator,the first opening of the first insulator is arranged to be in contact with ...

Apparatus and Method for Generating Nitric Oxide in Controlled and Accurate Amounts

A nitric oxide generator generates nitric oxide from a mixture of nitrogen and oxygen such as air treated by a pulsating electrical discharge. The desired concentration of nitric oxide is obtained by controlling at least one of a frequency of the pulsating electrical discharge and duration of each electrical discharge pulse. 1. An apparatus for generating nitric oxide comprising:a reaction chamber enclosing two electrodes separated by a gap,a gas inlet port for introducing a gas mixture containing oxygen and nitrogen into said reaction chamber,an electronic control circuit for delivering a pulsed DC electric discharge between the two said electrodes to generate nitric oxide;a magnetic field generator proximate to said gap between the electrodes; anda gas outlet port for delivering the gas mixture from said reaction chamber.2. The apparatus of wherein the magnetic field generator is a permanent magnet.3. The apparatus of wherein the magnetic field generator is two permanent magnets claim 1 , one on each side of the gap.4. The apparatus of wherein the magnetic field generator is an electric coil claim 1 , which is energized by an electric current to provide the magnetic field.5. The apparatus of wherein the magnetic field generator is four permanent magnets claim 1 , two on each side of the gap.6. The apparatus of wherein the electronic control circuit is configured to control a pulse frequency of the pulsed DC electric discharge and to control a pulse duration of the pulsed DC electric discharge independent of the pulse frequency to produce a desired concentration of nitric oxide.7. The apparatus of wherein the electronic control circuit is configured to provide a substantially constant current during the electrical discharge.8. The apparatus of further including a user input control communicating with the electronic control circuit configured to set a desired concentration of nitric oxide by a user.9. The apparatus of further including a flow device communicating ...

CATHODIC ARC SOURCE

A cathodic arc evaporation apparatus including 2. Apparatus according to claim 1 , characterized in that the apparatus comprises a ferromagnetic central limiter electrically floating for modifying the trajectory of the magnetic fields lines that exit the front-target surface in order to make them essentially parallel to the plane of the front-target surface.3. Method for operating the apparatus according to claim 1 , characterized in that during operation of the apparatus within a vacuum chamber claim 1 , three plasma zones or plasma regions are produced claim 1 , wherein:a first plasma zone comprises electrons crossing the magnetic fields without having access to the anode, because of the magnetic field lines that exit the front-target surface and end in the inner surface of the confinement member,a second plasma zone, in which electrons are drifted to the anode by the magnetic field lines that exit the front-target surface and end in the electron receiving surface of the anode, anda third plasma zone, in which there are not any magnetic field lines which neither exit the front-target surface and end in the inner surface of the confinement member nor exit the front-target surface and end in the electron receiving surface.4. Method according to claim 3 , characterized in that:the electron temperature in the first plasma zone is between 1 eV und 5 eV, andthe electron temperature in the second plasma zone and in the third plasma zone is between 0.3 eV und 1 eV.5. Method according to claim 3 , characterized in that the method comprises at least one step in which a reactive gas is introduced in the vacuum chamber and the apparatus is operated while the reactive gas is introduced in the vacuum chamber claim 3 , wherein the first plasma zone comprises more reactive gas ions than the second plasma zone and the third plasma zone claim 3 , consequently the reactive gas ion density in the first plasma zone being higher than the reactive gas ion density in the second and third ...

PLASMA PROCESSING APPARATUS

In a vacuum arc discharge deposition apparatus, an orifice plate having an opening is arranged in a state of being insulated from a magnetic field duct including at least one curved portion for transporting a deposition particle in the middle of the at least one curved portion, in which a neutral particle and a charged particle are removed by applying a voltage to the orifice plate. 1. A plasma processing apparatus comprising:a chamber configured to generate a plasma beam by ionizing a target arranged inside the chamber with an arc plasma generated by an arc discharge;a processing chamber configured to accommodate a substrate to be processed by the plasma beam; one end connected to the chamber;', 'another end connected to the processing chamber; and', 'at least one curved portion;, 'a duct comprisinga magnetic field generation unit configured to generate a magnetic field along a longitudinal direction of the duct; anda first orifice plate having an opening, which is arranged in a state of being electrically insulated from the duct at the at least one curved portion inside the duct,wherein the first orifice plate is applied with a voltage by one of a direct-current voltage source and a high frequency voltage source.2. The plasma processing apparatus according to claim 1 , wherein an angle between a surface of the target and a surface of the first orifice plate is in a range from 22.5 degrees to 55 degrees.3. The plasma processing apparatus according to claim 1 , wherein an angle between a surface of the target and a surface of the first orifice plate is in a range from 35 degrees to 45 degrees.4. The plasma processing apparatus according to claim 1 , wherein a diameter of the opening of the first orifice plate is in a range from 20 mm to 60 mm.5. The plasma processing apparatus according to claim 1 , wherein the magnetic field generation unit comprises a magnetic coil arranged on an outer circumferential portion of the duct.6. The plasma processing apparatus ...

Sputtering cathode, sputtering device, and method for producing film-formed body

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

METHOD OF EXTRACTING AND ACCELERATING IONS

A method of extracting and accelerating ions is provided. The method includes providing a ion source. The ion source includes a chamber. The ion source further includes a first hollow cathode having a first hollow cathode cavity and a first plasma exit orifice and a second hollow cathode having a second hollow cathode cavity and a second plasma exit orifice, the first and second hollow cathodes being disposed adjacently in the chamber. The ion source further includes a first ion accelerator between and in communication with the first plasma exit orifice and the chamber. The first ion accelerator forms a first ion acceleration cavity. The ion source further includes a second ion accelerator between and in communication with the second plasma orifice and the chamber. The second ion accelerator forms a second ion acceleration cavity. The method further includes generating a plasma using the first hollow cathode and the second hollow cathode. The first hollow cathode and the second hollow cathode are configured to alternatively function as electrode and counter-electrode. The method further includes extracting and accelerating ions. Each of the first ion acceleration cavity and the second ion acceleration cavity are sufficient to enable the extraction and acceleration of ions. 1) A method of extracting and accelerating ions comprising: a chamber;', 'a first hollow cathode having a first hollow cathode cavity and a first plasma exit orifice and a second hollow cathode having a second hollow cathode cavity and a second plasma exit orifice, the first and second hollow cathodes being disposed adjacently in the chamber;', 'a first ion accelerator between and in communication with the first plasma exit orifice and the chamber, wherein the first ion accelerator forms a first ion acceleration cavity; and', 'a second ion accelerator between and in communication with the second plasma orifice and the chamber, wherein the second ion accelerator forms a second ion acceleration ...

Sputtering System And Method Including An Arc Detection

A sputtering system that includes a sputtering chamber having a target material serving as a cathode, and an anode and a work piece. A direct current (DC) power supply supplies electrical power to the anode and the cathode sufficient to generate a plasma within the sputtering chamber. A detection module detects the occurrence of an arc in the sputtering chamber by monitoring an electrical characteristic of the plasma. In one embodiment the electrical characteristic monitored is the impedance of the plasma. In another embodiment the electrical characteristic is the conductance of the plasma.

Apparatus and Method for Generating Nitric Oxide in Controlled and Accurate Amounts

A nitric oxide generator generates nitric oxide from a mixture of nitrogen and oxygen such as air treated by a pulsating electrical discharge. The desired concentration of nitric oxide is obtained by controlling at least one of a frequency of the pulsating electrical discharge and duration of each electrical discharge pulse. 18-. (canceled)9. An apparatus for generating nitric oxide comprising:(i) a reaction chamber;(ii) an inlet to provide a flow of reactant gas comprising nitrogen and oxygen to the reaction chamber;(iii) a pair of electrodes located in the reaction chamber and separated by a gap;(iv) a flow meter for measuring a gas flow from an external regulated source to determine the flow of the reactant gas through the reaction chamber;(v) an electronic control circuit in communication with the flow meter and the electrodes to generate an electric arc discharge across the gap, wherein the electronic control circuit is configured to control a pulse frequency of the electric arc discharge and a pulse duration of the electric arc discharge independent of the frequency; and wherein the electric arc discharge across the gap determines a concentration of nitric oxide generated in the reactant gas to produce a product gas comprising nitric oxide; and(vi) an outlet for the product gas comprising nitric oxide.10. The apparatus of claim 9 , wherein the electronic control circuit is configured to provide a constant current during the electric discharge.11. The apparatus of claim 9 , further comprising a gas pump.12. The apparatus of claim 9 , wherein the flow meter is positioned between the inlet and the reaction chamber.13. The apparatus of claim 9 , wherein the flow meter is configured to provide the flow of the reactant gas based on a measurement associated with a medical gas into which the product gas flows.14. The apparatus of claim 13 , wherein the measurement associated with the medical gas is a flow rate of the medical gas such that the flow of the reactant gas ...

MODIFIABLE MAGNET CONFIGURATION FOR ARC VAPORIZATION SOURCES

A method for coating substrates in an arc vaporization source for generating hard surface coatings on tools is provided. The method includes providing an arc-vaporization source with at least one electric solenoid and a permanent magnet arrangement including marginal permanent magnets and a central permanent magnet. The method further includes adjusting the position of the central and marginal permanent magnets relative to the target surface in at least three settings, adjusting the strength of the generated magnetic field based on the position of the central and marginal permanent magnets among the at least three settings, and coating the substrates by an ARC vaporization coating process performed by the ARC vaporization source at each of the at least three settings. 1. A method for coating substrates in an ARC vaporization installation , the method comprising:providing an ARC vaporization source with a magnetic field arrangement, the magnetic field arrangement including marginal permanent magnets, a central permanent magnet, and at least one ring coil placed behind a target comprising coating material;the magnetic field arrangement generating magnetic fields on and above a surface of the target;adjusting a position of the central and marginal permanent magnets in at least three settings, the at least three settings comprising:(a) a first setting at which the central and marginal permanent magnets take up a first position in which their poles are closest to the coating material, wherein an end of a pole of the marginal permanent magnet that is closest to the coating material, and the end of the pole of the central permanent magnet that is closest to the coating material, and the end of the ring coil that is closest to the coating material, lie in one plane;(b) a second setting at which the central and marginal permanent magnets take up a second position at a distance between 5 mm and 50 mm further from the surface of the target than the first position, wherein in ...

Gas Flow Control for Millisecond Anneal System

Systems and methods for gas flow in a thermal processing system are provided. In some example implementations a gas flow pattern inside the process chamber of a millisecond anneal system can be improved by implementing one or more of the following: (1) altering the direction, size, position, shape and arrangement of the gas injection inlet nozzles, or a combination hereof; (2) use of gas channels in a wafer plane plate connecting the upper chamber with the lower chamber of a millisecond anneal system; and/or (3) decreasing the effective volume of the processing chamber using a liner plate disposed above the semiconductor substrate. 1. A thermal processing system , comprising:a processing chamber comprising a top chamber separated from a bottom chamber by a wafer plane plate;a plurality of heat sources configured to provide heat for the thermal treatment of a substrate;a plurality of gas inlets configured to inject gas into the processing chamber;wherein one or more of the direction, size, position, shape, or arrangement of the gas inlets are configured to increase laminar flow across the wafer plane plate.2. The thermal processing system of claim 1 , wherein the plurality of gas inlets are arranged in separate top corners of the top chamber claim 1 , the gas inlets oriented to point to the substrate.3. The thermal processing system of claim 1 , wherein at least one of the plurality of gas inlets is positioned proximate to the wafer plane plate.4. The thermal processing system of claim 1 , wherein at least one of the plurality of gas inlets is positioned a first distance from a ceiling of the top chamber and a second distance from the wafer plane plate claim 1 , the first distance being greater than the second distance.5. The thermal processing system of claim 4 , wherein the system further comprises a plurality of gas inlets located in separate top corners of the top chamber.6. The thermal processing system of claim 1 , wherein at least one of the plurality of gas ...

COATED CUTTING TOOL AND A PROCESS FOR ITS MANUFACTURE

A coated cutting tool and a process for manufacturing a coated cutting tool consisting of a substrate and a single-layer or multi-layer hard material coating. The substrate is selected from cemented carbide, cermet, ceramics, cubic boron nitride, polycrystalline diamond or high-speed steel. The hard coating includes at least one layer of AlCrMeON, wherein a+b+c+d+e=1, a, b, d and e each are >0, c=0 or c>0, a≥b, c/(a+b+c)≤0.1, wherein Me is at least one element selected from the group consisting of Ti, Zr, Ta, Nb, Hf, Si, and V, and wherein the AlCrMeONlayer is deposited by an arc vapor deposition process (Arc-PVD) using targets containing Al and Cr with an Al:Cr atomic ratio in the range of 95:5 to 50:50. 2. The process according to claim 1 , wherein the Al:Cr atomic ratio in the target(s) is in the range of 90:10 to 50:50.3. The process according to claim 1 , wherein the total gas pressure is ≥8 Pa and/or the total gas pressure is ≤15 Pa.4. The process according to claim 1 , wherein (flow rate (O)+flow rate (N))/flow rate (inert gas)≥5 or the reaction gas mixture contains no inert gas.5. The process according to claim 1 , wherein a ratio of overall evaporator current (measured in Ampere [A]) to Oflow (measured in sccm) is in the range of 15:1 to 6:1.6. The process according to claim 1 , wherein the bias voltage is in the range of 20 to 100 V.7. The process according to claim 1 , wherein the Opartial pressure is in the range of 0.01 to 0.1 Pa.8. A coated cutting tool comprising:a substrate; and{'sub': a', 'b', 'c', 'd', 'e, 'a single-layer or multi-layer hard material coating, the substrate being selected from cemented carbide, cermet, ceramics, cubic boron nitride (cBN), polycrystalline diamond (PCD) or high-speed steel, wherein the hard material coating includes at least one layer of AlCrMeON, wherein a, b, c, d, and e are atomic ratio and wherein'}i) a+b+c+d+e=1,ii) a, b, d and e each are ≥0,iii) c=0 or c≥0,iv) a≥b,v) c/(a+b+c)≤0.1vi) 0.1≤d/(d+e)≤0.5,{'sub': a', ...

SYSTEMS AND METHODS FOR OPTIMAL SOURCE MATERIAL DEPOSITION ALONG HOLE EDGES

A method for depositing a coating of a source material onto a panel is disclosed. The method includes providing a cathodic arc, the cathodic arc including a target surface, the target surface disposed along a target deposition axis and able to emit the source material as a generally cloud of source material vapor and a generally conical stream of liquid particles of the source material. The method further includes positioning the panel relative to the target surface based on a deposition angle, the deposition angle being between the target surface and an outer limit of the generally conical stream of liquid particles o the source material. The method may further include emitting the source material from the target surface as the generally conical cloud of source material vapor and coating the edge with the cloud of source material vapor to provide an edge coating. 1. A system for depositing a coating of a source material onto at least one panel , the at least one panel defining an edge and a front panel surface , the system comprising:a cathodic arc including a target surface, the target surface disposed along a target deposition axis, and able to emit the source material as both a cloud of source material vapor and a generally conical stream of liquid particles of the source material, the cloud of source material vapor used to coat the edge with the source material to provide an edge coating; anda coating deposition structure, the coating deposition structure positioning one or both of the cathodic arc and the panel, such that the panel is positioned relative to the target surface based on a deposition plane, the deposition plane being defined by the target deposition axis, wherein the entire panel is positioned above or below the deposition plane and within the generally conical stream of liquid particles.2. The system of claim 1 , wherein the coating deposition structure positions the panel substantially perpendicular to the target deposition axis.3. The system ...

Anode assembly of a vacuum-arc cathode plasma source

An anode unit is connected with an arc power supply having a positive terminal. The unit includes—an anode with an inlet,—a focusing coil encircling the anode, generating a focusing magnetic field,—a deflection coil being a conductive cooled pipe within an electro-conductive shell mounted in the anode, generating a deflection field opposite to the focusing one, having a distal butt end distal to the inlet and a proximal butt end proximal thereto, and a beginning turn,—a deflection permanent magnet inside the deflection coil facing the proximal end, generating a permanent deflection field, and—an additional permanent magnet inside the deflection coil facing the distal end, generating an additional magnetic field opposite to the permanent deflection one. The positive terminal is connected to the anode through the focusing coil and to the shell through the deflection coil. The beginning turn has a thermal contact with the shell.

Hard coating film and method for producing same

A hard film whose composition formula satisfies M 1-a-b C a N b , in which M is at least one element selected from Ti, Cr and Al, or is the element and at least one element selected from Group 4 elements except for Ti, Group 5 elements, Group 6 elements except for Cr, Si, Y, and rare earth elements. Atomic ratios of M, C and N satisfy: 0.01≦a≦0.50; 0.10≦b≦0.50; and 0<1-a-b. A ratio y of C-to-C bonding to all C bonding in the film is 0.20 or more.

FLUORINE ION IMPLANTATION SYSTEM WITH NON-TUNGSTEN MATERIALS AND METHODS OF USING

A system and method for fluorine ion implantation is described, which includes a fluorine gas source used to generate a fluorine ion species for implantation to a subject, and an arc chamber that includes one or more non-tungsten materials (graphite, carbide, fluoride, nitride, oxide, ceramic). The system minimizes formation of tungsten fluoride during system operation, thereby extending source life and promoting improved system performance. Further, the system can include a hydrogen and/or hydride gas source, and these gases can be used along with the fluorine gas to improve source lifetime and/or beam current. 1. A system for implanting fluorine ion species into a substrate , the system comprising:a gas source comprising a fluorine compound, wherein the fluorine compound is capable of generating at least one fluorine ion species when ionized; andan arc chamber comprising from one or more materials comprising a graphite-containing material, a carbide-containing material, a fluoride-containing material, a nitride-containing material, a oxide-containing material, or a ceramic.2. The system of wherein the one or more materials comprising a graphite-containing material claim 1 , a carbide-containing material claim 1 , a fluoride-containing claim 1 , a nitride-containing claim 1 , a oxide-containing material claim 1 , or a ceramic are present in all or a portion of one or more of arc chamber liner(s) or arc chamber piece(s).3. The system of wherein the one or more materials comprising a graphite-containing material claim 1 , a carbide-containing material claim 1 , a fluoride-containing claim 1 , a nitride-containing claim 1 , a oxide-containing material claim 1 , or a ceramic can be non-graded claim 1 , surface graded claim 1 , or surface coated claim 1 , on an arc chamber liner(s) or arc chamber piece(s).4. The system of wherein the graphite-containing material claim 1 , the carbide-containing material claim 1 , a fluoride-containing claim 1 , a nitride-containing ...

Method for forming perovskite layers using atmospheric pressure plasma

Improved deposition of optoelectronically active perovskite materials is provided with a two step process. In the first step, precursors are deposited on a substrate. In the second step, the deposited precursors are exposed to an atmospheric pressure plasma which efficiently cures the precursors to provide the desired perovskite thin film. The resulting films can have excellent optical properties combined with superior mechanical properties. 1. A method of forming an optoelectronically active layer of a perovskite material , the method comprising:depositing one or more precursors on a substrate to provide deposited precursors;exposing the deposited precursors to a plasma to form the optoelectronically active layer of a perovskite material, wherein the plasma discharge is an atmospheric pressure plasma.2. The method of claim 1 , wherein the exposing the deposited precursors to a plasma to form the optoelectronically active layer of a perovskite material provides simultaneousa) solvent removal,b) precursor bond rearrangement, andc) crystallization of perovskite structure, andd) evolution of reaction byproducts.3. The method of claim 1 , wherein the exposing the deposited precursors to a plasma to form the optoelectronically active layer of a perovskite material comprises a method selected from the group consisting of: exposing the deposited precursors directly to a plasma discharge claim 1 , exposing the deposited precursors to an afterglow region of a plasma discharge and exposing the deposited precursors to a plasma jet region of a plasma discharge.4. The method of claim 1 , wherein the plasma discharge is provided by lateral injection.5. The method of claim 1 , wherein the plasma discharge is provided by central injection.6. The method of claim 1 , wherein the plasma discharge is selected from the group consisting of: arc discharges claim 1 , dielectric barrier discharges claim 1 , corona discharges claim 1 , radio-frequency capacitive discharges claim 1 , ...

Sputtering Cathode, Sputtering Device, and Method for Producing Film-Formed Body

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

Coating apparatus and method for use thereof

A cathode arc evaporator of metals and alloys for coating in a vacuum chamber, including an ignition device adapted for initiating an arc discharge, at least one anode, a water-cooled, consumable tubular cathode arranged along a longitudinal axis and rotatable thereabout, an electromagnetic system disposed within the cathode and adapted for forming an arch-like magnetic field, formed by at least one electromagnetic coil, in the vicinity of a surface of the cathode, resulting in a displaceable cathode spot, which is steerable by the magnetic field, at least one sensor responsive to the proximity of the cathode spot, and a controller which is configured to switch the polarity of the current of the at least one electromagnetic coil in response to the signals received from the at least one sensor.

NON-PLUGGING D.C. PLASMA GUN

A plasma gun system comprising: a plasma gun comprising an outlet, wherein the plasma gun is configured to generate a plasma stream and provide the plasma stream to the outlet; and a plasma gun extension assembly configured to be coupled to the plasma gun, wherein the plasma gun extension assembly comprises an extension chamber and a port, the extension chamber having an interior diameter defined by a chamber wall and being configured to receive the plasma stream from the outlet of the plasma gun and to enable the plasma stream to expand upon entering the extension chamber, and the port being configured to introduce a powder to the expanded plasma stream at a location outside of the plasma gun. 1. A method of using a plasma gun system , the method comprising:generating a plasma stream using a plasma gun, wherein the plasma stream flows through an outlet of the plasma gun and into an extension chamber having an interior diameter defined by a chamber wall, the plasma stream expanding upon entering the extension chamber; andflowing a powder into the expanded plasma stream in the extension chamber via a port fluidly coupled to the extension chamber, wherein the port introduces the powder to the expanded plasma stream at a location outside of the plasma gun.2. The method of claim 1 , wherein the port is disposed on a faceplate that is coupled between the plasma gun and the extension chamber.3. The method of claim 2 , wherein the faceplate comprises a circular ring shape and the outlet of the plasma gun is aligned with the center of the faceplate to enable the plasma stream to pass the faceplate and flow into the extension chamber.4. The method of claim 2 , wherein the faceplate comprises copper.5. The method of claim 2 , wherein the chamber wall comprises a ceramic material.6. The method of claim 5 , wherein the chamber wall comprises boron nitride.7. The method of claim 2 , wherein the chamber wall comprises a substantially tubular shape.8. The method of claim 2 , ...

FILTER APPARATUS FOR ARC ION EVAPORATOR USED IN CATHODIC ARC PLASMA DEPOSITION SYSTEM

A filter apparatus for arc ion evaporator used in the cathodic arc plasma deposition system according to this invention is characterized by a set of multiple straight tubes placing in parallel to one another wherein the size and/or amount of large particles, which could contaminate the plasma beam, can be controlled. The filter apparatus further comprises a set of solenoid coils which coil around the filter to generate a magnetic field to drive plasma to the targeting object or material. 1. A filter apparatus for arc ion evaporator used in the cathodic arc plasma deposition system characterizes by a parallel set of multiple straight tubes to filter the neutral particles including large particles out of the plasma beam from arc ion evaporator or cathodic arc source wherein the multiple straight tubes comprising:{'b': '105', 'a straight innermost tube () transparent to a plasma stream in line of sight perpendicular to cathode plane;'}{'b': '106', 'a set of adjacent straight tubes ();'}{'b': 107', '103, 'a set of subsequent adjacent straight tube () placing in parallel manner to one another and containing inside the outermost straight tube () in a concentric ring manner; and'}{'b': 104', '103, 'a set of solenoid coils () chosen from metal or electric conducting wires placing around the outermost straight tube () in helical manner in order for the solenoid field or magnetic field to be generated to guide or move plasma out of the filter system.'}2. The filter apparatus for arc ion evaporator used in the cathodic arc plasma deposition system according to wherein the filter apparatus is equipped with an arc ion evaporator or a cathodic arc source.3. The filter apparatus for arc ion evaporator used in the cathodic arc plasma deposition system according to any of or wherein the filter apparatus is a built-in apparatus as a single unit or is welded to or fastened with the arc ion evaporator or the cathodic arc source.4. A filter apparatus for arc ion evaporator used in the ...

Distributed, Non-Concentric Multi-Zone Plasma Source Systems, Methods and Apparatus

A chamber top for a processing chamber is provided. The chamber top includes a first plasma source oriented horizontally over the chamber top and a second plasma source oriented horizontally over the chamber top. The second plasma source is arranged concentrically around the first plasma source. Also included is a first plurality of ferrites encircling the first plasma source and a second plurality of ferrites encircling the second plasma source. A first primary winding is disposed around an outer circumference of the first plasma source and a second primary winding disposed around an outer circumference of the second plasma source. The first and second primary windings pass through the respective plurality of ferrites. A plurality of outlets is disposed on a lower portion of the first and second plasma sources, and the plurality of outlets is oriented between adjacent ones of the first and second plurality of ferrites. The plurality of outlets is configured to connect the first and second plasma sources of the chamber top to the processing chamber. 1. A chamber top for a processing chamber , comprising ,a first plasma source oriented horizontally over the chamber top;a second plasma source oriented horizontally over the chamber top, the second plasma source is arranged concentrically around the first plasma source;a first plurality of ferrites encircling the first plasma source, and a second plurality of ferrites encircling the second plasma source;a first primary winding disposed around an outer circumference of the first plasma source and a second primary winding disposed around an outer circumference of the second plasma source, such that the first and second primary windings pass through the respective plurality of ferrites; anda plurality of outlets disposed on a lower portion of the first and second plasma sources, the plurality of outlets being oriented between adjacent ones of the first and second plurality of ferrites;wherein the plurality of outlets is ...

Apparatus and method for producing a plasma, and use of such an apparatus

The invention relates to an apparatus ( 1 ) for producing a plasma, having at least one first electrode ( 3 ), at least one second electrode ( 5 ), which is arranged at a distance from the first electrode ( 3 ), a voltage source ( 7 ), which is connected to at least one electrode ( 3,59 ) selected from the first electrode ( 3 ) and the second electrode ( 5 ) such that a potential difference between the at least one first electrode ( 3 ) and the at least one second electrode ( 5 ) can be produced by the voltage source ( 7 ), wherein the at least one first electrode ( 3 ) and the at least one second electrode ( 5 ) define at least one discharge path ( 9 ) for an electrical discharge in a discharge region ( 11 ) between the at least one first electrode ( 3 ) and the at least one second electrode ( 5 ). In this case, a magnetic field arrangement ( 15 ) is provided that is set up and arranged relative to the at least one first electrode ( 3 ) and the at least one second electrode ( 5 ), to provide a magnetic field in the discharge region ( 11 ), so that a magnetic field vector (B) of the magnetic field is oriented at an angle to the discharge path ( 9 ).

VACUUM ARC SOURCE

A vacuum arc source for arc evaporation of boride includes: a cathode made of at least 90 at-% of boride, in particular made of more than 98 at-% of boride; an anode, which is preferably in the shape of a disk; a body made of a material which is less preferred by arc discharge compared to the cathode, the body surrounding the cathode in such a way that during operation of the vacuum arc source, movement of an arc on an arc surface of the cathode is limited by the body. At least 90 at-% of the material of the anode is of the same chemical composition as the cathode. 115-. (canceled)16. A vacuum arc source for arc evaporation , the vacuum arc source comprising:a cathode made of at least 90 at-% of boride;an anode;a body made of a material which is less preferred by arc discharge compared with said cathode, said body being disposed to surround said cathode and, during an operation of the vacuum arc source, to limit a movement of an arc on an arc surface of said cathode; andat least 90 at-% of a material of said anode being of a same chemical composition as said cathode.17. The vacuum arc source according to claim 16 , wherein said cathode is made of more than 98 at-% of boride.18. The vacuum arc source according to claim 16 , wherein said anode is a disk-shaped anode.19. The vacuum arc source according to claim 16 , wherein said cathode is made of a material selected from the group consisting of TiB claim 16 , ZrB claim 16 , VB claim 16 , TaB claim 16 , CrB claim 16 , NbB claim 16 , WB claim 16 , WB claim 16 , HfB claim 16 , AIB claim 16 , MoB claim 16 , MoB claim 16 , and mixtures thereof.20. The vacuum arc source according to claim 16 , wherein a shape of said cathode is prismatic or cylindrical and/or a shape of said body is prismatic or cylindrical.21. The vacuum arc source according to claim 20 , wherein the shape of said cathode and the shape of said body are at least substantially equal.22. The vacuum arc source according to claim 20 , wherein said cathode ...

ARC SOURCE SYSTEM FOR A CATHODE

An arc source system, comprising a cooling body () and a holder body () adapted to be detachably fastened to said cooling body and for holding a cathode body (), wherein the system comprises a membrane () which is arranged between the holder body and a lower portion () of said cooling body; and wherein said lower portion () of said cooling body is provided with at least one cooling fluid channel (), and wherein said holder body () is provided with an inner fastening arrangement configured to be coupled with a corresponding outer fastening arrangement on a cathode body (). 1. An arc source system , comprising a cooling body anda holder body adapted to be detachably fastened to said cooling body and for holding a cathode body, the cooling body comprising a lower portion and an upper portion,wherein the system comprises a membrane which is arranged between the holder body and the lower portion of said cooling body; andwherein said lower portion of said cooling body is provided with at least one cooling fluid channel, andwherein said holder body is provided with an inner fastening arrangement configured to be coupled with a corresponding outer fastening arrangement on a cathode body,wherein said holder body is detachably fastened to said cooling body by at least two fastening devices, andwherein said fastening devices further are arranged to engage said membrane.2. The arc source system as claimed in claim 1 , wherein said fastening arrangement comprises an inner threaded portion of the holder portion claim 1 , configured to be in a threaded coupling with a corresponding outer threaded portion of the cathode body claim 1 , or wherein said fastening arrangement comprises a bayonet mount.3. The arc source system as claimed in claim 1 , wherein the membrane is made of copper claim 1 , aluminum claim 1 , or alloys or mixtures thereof.4. The arc source system as claimed in claim 3 , wherein said membrane is made from brass.5. The arc source system as claimed in claim 1 , ...

Plasma Source

This invention relates to magnetically enhanced cathodic plasma deposition and cathodic plasma discharges where the charged particles can be guided in a rarefied vacuum system. Specifically, a cluster or combination of cathodic plasma sources is described where a least two plasma source units are arranged in a rarefied gas vacuum system in such way that the resulting magnetic field interaction offers a guided channelling escape path of electrons in essentially perpendicular direction to the main bulk of neutral particles and droplets generated in the cathodic plasma source. In addition the cathodic plasma source arrangement of the present invention would generate a zone of very low magnetic field where the electrons are trapped via electric and magnetic fields. Ions generated by the plasma cluster would follow electrons via escape paths determined by electric and magnetic fields. The direction for the ions is fundamentally different from those of the neutral particles offering in this manner a charged particles filtering method. The invention could take form in different embodiments and different arrangements of these plasma clusters, interacting by magnetic interactions in such a way that the plasma would cross areas for the desired plasma treatment and/or coating of suitable substrates. 1. A plasma source comprising: a first and a second , spaced-apart plasma source unit each plasma source unit comprising a target and a magnetic means; wherein the magnetic means each create a magnetic field which forms a closed loop magnetic trap over their respective targets; and which fields interact to form: an area of substantially very low magnetic field strength in a region located between the plasma sources; and a guiding magnetic field extending away from the region located between the plasma source units.2. The plasma source of claim 1 , further comprising means for electrically biasing the plasma source units.3. The plasma source of claim 2 , wherein the electrical bias ...

Apparatus and Method for Generating Nitric Oxide in Controlled and Accurate Amounts

A nitric oxide generator generates nitric oxide from a mixture of nitrogen and oxygen such as air treated by a pulsating electrical discharge. The desired concentration of nitric oxide is obtained by controlling at least one of a frequency of the pulsating electrical discharge and duration of each electrical discharge pulse. 18-. (canceled)9. A method for generating nitric oxide comprising: (a) a reaction chamber;', '(b) an inlet to provide the flow of the reactant gas comprising nitrogen and oxygen to the reaction chamber', '(c) a pair of electrodes in the reaction chamber and separated by a gap;', '(d) an electronic control circuit in communication with the electrodes to generate an electric arc discharge across the gap, wherein the electronic control circuit is configured to control a pulse frequency of the electric arc discharge and a pulse duration of the electric arc discharge independent of the frequency;', '(e) an outlet for a product gas comprising nitric oxide;, '(i) providing a flow of a reactant gas comprising nitrogen and oxygen to an apparatus comprising(ii) promoting the electric arc discharge across the electrodes through the gas flow while controlling the pulse frequency of the electric arc discharge and the pulse duration of the electric arc discharge to produce the product gas comprising nitric oxide; and(iii) outputting the product gas comprising nitric oxide.10. The method of claim 9 , wherein the electronic control circuit is configured to provide a constant current during the electric discharge.11. The method of claim 9 , wherein the product gas comprising nitric oxide is generated using a flow of the reactant gas through the reaction chamber.12. The method of claim 11 , wherein the apparatus further comprises a flow device to provide the flow of the reactant gas through the reaction chamber.13. The method of claim 12 , wherein the flow device is selected from the group consisting of: a flow sensor for measuring the gas flow from an external ...

Coaxial Hollow Cathode Plasma Assisted Directed Vapor Deposition and Related Method Thereof

A plasma generation process that is more optimized for vapor deposition processes in general, and particularly for directed vapor deposition processing. The features of such an approach enables a robust and reliable coaxial plasma capability in which the plasma jet is coaxial with the vapor plume, rather than the orthogonal configuration creating the previous disadvantages. In this way, the previous deformation of the vapor gas jet by the work gas stream of the hollow cathode pipe can be avoided and the carrier gas consumption needed for shaping the vapor plume can be significantly decreased. 137-. (canceled)38. A method for depositing at least one evaporant onto at least one substrate , said method comprising:providing at least one substrate,providing at least one evaporant source,impinging said at least one evaporant source with an energetic beam to generate a vapor plume,generating a plasma and discharging a current that is aligned with said vapor plume,emitting at least one plasma forming gas in a direction that is at least substantially aligned with said vapor plume,electrostatically attracting said discharge current towards at least one anode, andinteracting said plasma with said substrate.39. The method of claim 38 , wherein said discharge current is emitted by at least one hollow cathode operating in a high-current claim 38 , low-voltage arc mode claim 38 , forming a low-voltage electron beam.40. The method of claim 38 , wherein said at least one evaporant source is a solid.41. The method of claim 38 , wherein said discharge current is changed to modulate or control the plasma density.42. The method of claim 39 , wherein said at least one hollow cathode emits said plasma-forming gas such as to generate a plasma jet streaming off of the hollow cathode's orifice.43. The method of claim 42 , wherein the axis and/or momentum of said plasma jet and of said low-voltage electron beam is at least substantially aligned with that of the said hollow cathode.44. The ...

Apparatus and Method for Generating Nitric Oxide in Controlled and Accurate Amounts

A nitric oxide generator generates nitric oxide from a mixture of nitrogen and oxygen such as air treated by a pulsating electrical discharge. The desired concentration of nitric oxide is obtained by controlling at least one of a frequency of the pulsating electrical discharge and duration of each electrical discharge pulse. 1. (canceled)2. A method of generating nitric oxide comprising:collecting information related to one or more conditions of a respiratory system associated with a patient;determining one or more control parameters based on the collected information, the one or more control parameters being determined by a controller in electrical communication with at least one sensor for collecting the information related to one or more condition of the respiratory system;receiving a gas flow containing oxygen and nitrogen into a reaction chamber having a first and second electrodes separated by a gap;promoting electrical discharges across the first and second electrodes through the gas flow based on the determined control parameters while controlling a pulse frequency of the electrical discharges and a pulse duration of the electrical discharges to produce a predetermined concentration of nitric oxide in the gas flow; andoutputting the gas flow and nitric oxide from the reaction chamber;wherein the one or more conditions include an inspiration event of the patient.3. A method comprising:collecting information related to one or more conditions of a respiratory system associated with a patient;determining one or more control parameters based on the collected information, the one or more control parameters being determined by a controller in electrical communication with at least one sensor for collecting the information related to one or more condition of the respiratory system; andinitiating a series of electric pulse discharges external to the patient to generate nitric oxide based on the determined control parameters, the determined control parameters being ...

Apparatus and Method for Generating Nitric Oxide in Controlled and Accurate Amounts

A nitric oxide generator generates nitric oxide from a mixture of nitrogen and oxygen such as air treated by a pulsating electrical discharge. The desired concentration of nitric oxide is obtained by controlling at least one of a frequency of the pulsating electrical discharge and duration of each electrical discharge pulse. 1. (canceled)2. An apparatus for generating nitric oxide comprising:a pair of electrodes;a filter arranged downstream of the electrodes;one or more sensors in communication with a controller;the controller further in communication with the electrodes and configured to supply an electrical signal to the electrodes that controls timing and sparking characteristics of the electrodes; andwherein the sparking characteristics of the electrodes determine a concentration of nitric oxide generated by the electrodes.3. The apparatus of claim 2 , wherein the electrodes comprise a nobel metal.4. The apparatus of claim 2 , wherein the one or more sensors includes a flow sensor to measure the flowrate of gas.5. The apparatus of claim 2 , wherein a transformer is in communication with the controller and the electrodes.6. The apparatus of claim 5 , wherein the controller is further configured to instruct the transformer to supply stored electrical energy to the electrodes.7. The apparatus of claim 2 , wherein the electrical signal supplied to the electrodes controls at least one of a pulse frequency of the electrical discharge or a pulse duration of the electrical discharge independent of the pulse frequency.8. The apparatus of claim 7 , wherein the controller is further configured to vary at least one of a pulse frequency of the electrical discharge or a pulse duration of the electrical discharge independent of the pulse frequency.9. The apparatus of claim 2 , further comprising a gas pump arranged upstream of the electrodes.10. The apparatus of claim 2 , wherein the one or more sensors provide an indication of inspiration.11. The apparatus of claim 10 , ...

Apparatus and Method for Generating Nitric Oxide in Controlled and Accurate Amounts

A nitric oxide generator generates nitric oxide from a mixture of nitrogen and oxygen such as air treated by a pulsating electrical discharge. The desired concentration of nitric oxide is obtained by controlling at least one of a frequency of the pulsating electrical discharge and duration of each electrical discharge pulse. 18-. (canceled)9. An apparatus for generating nitric oxide comprising:(i) a plasma chamber;(ii) a pair of electrodes located in the plasma chamber and separated by a gap;(iii) a controller in communication with the electrodes to generate an electric arc discharge across the gap;wherein the electric arc discharge across the gap determines a concentration of nitric oxide generated.10. The apparatus of claim 9 , further comprising an inlet to provide a reactant gas comprising nitrogen and oxygen to the plasma chamber and an outlet to provide a product gas comprising nitric oxide.11. The apparatus of claim 10 , wherein the plasma chamber arranged between the inlet and the outlet.12. The apparatus of claim 9 , wherein the controller is configured to control at least one of a frequency of the electric arc discharge and/or a duration of the electric arc discharge independent of the frequency.13. The apparatus of claim 10 , wherein the product gas containing nitric oxide is generated using a flow of the reactant gas through the plasma chamber.14. The apparatus of claim 13 , further comprising a flow device to provide flow of the reactant gas through the reaction chamber.15. The apparatus of claim 14 , wherein the flow device is selected from the group consisting of: a flow sensor measuring gas flow from an external regulated source to produce the known gas flow claim 14 , a pump system operating to produce the known gas flow without flow sensing claim 14 , a control valve claim 14 , and a pump system with a flow sensor system providing feedback control of the pump system to produce the known gas flow.16. The apparatus of claim 14 , wherein the flow ...

Systems and Methods for Optimal Source Material Deposition Along Hole Edges

A method for depositing a coating of a source material onto a panel is disclosed. The method includes providing a cathodic arc, the cathodic arc including a target surface, the target surface disposed along a target deposition axis and able to emit the source material as a generally cloud of source material vapor and a generally conical stream of liquid particles of the source material. The method further includes positioning the panel relative to the target surface based on a deposition angle, the deposition angle being between the target surface and an outer limit of the generally conical stream of liquid particles o the source material. The method may further include emitting the source material from the target surface as the generally conical cloud of source material vapor and coating the edge with the cloud of source material vapor to provide an edge coating.

TI-AL-TA-BASED COATING EXHIBITING ENHANCED THERMAL STABILITY

A wear resistant coating system including a tantalum-containing multilayered film having n A layers and m B layers, where n and m are integral numbers larger than I, deposited alternating one on each other. The multilayered film exhibits crystalline cubic structure, and is characterized in that the B layers include tantalum and the A layers exhibit a higher defect density than the B layers. 120104810. Wear resistant coating system () comprising a tantalum containing multilayered film () consisting of n A layers () and m B layers () , where n and m are integral numbers larger than 1 , deposited alternate one on each other , said multilayered film () exhibiting crystalline cubic structure , characterized in that the B layers comprises tantalum and the A layers exhibit a higher defect density than the B layers.2. Coating system according to claim 1 , characterized in that the chemical composition of the A and B layers is given by the formulas with the coefficients in atomic percentage:{'sup': 1', '2, 'sub': 1−x', 'x', 'z', '1−z', '1-x-y', 'x', 'y', 'z', '1−z, 'MeAlNXfor the A layers and MeAlTaNX, for the B layers, where{'sup': '1', 'Meis one or more elements from: Ti, Cr, V, Ta, Nb, Zr, Hf, Mo, Si and W, and'}{'sup': '2', 'Meis one or more elements from: Ti, Cr, V, Nb, Zr, Hf, Mo, Si and W, and'}X is one or more elements from: O, C and B, and0.2≦X≦0.7, 0.7≦Z≦1, 0.02≦y≦0.803112233. Coating system according to claims 2 , characterized in that the thickness of the B layers is smaller than the thickness of the A layers: A>B claims 2 , A>B claims 2 , A>B . . . An>Bm.4112233. Coating system according to claims 3 , characterized in that the thickness of the A layers is at least 15% larger than the thickness of the B layers: A≧1.15 B claims 3 , A≧1.15 B claims 3 , A≧1.15 B . . . An≧1.15 Bm.51201. Coated body comprising a body () and a coating system () according to deposited on at least a portion of the surface of the body ().641020. Coated body according to clam claim 1 , ...