Plasma pinch system and method of using same
Номер патента: CA1307356C
Опубликовано: 08-09-1992
Автор(ы): John F. Asmus, Keith Boyer, Ralph H. Lovberg
Принадлежит: UNIVERSITY OF CALIFORNIA
Опубликовано: 08-09-1992
Автор(ы): John F. Asmus, Keith Boyer, Ralph H. Lovberg
Принадлежит: UNIVERSITY OF CALIFORNIA
Реферат: PLASMA PINCH SYSTEM AND METHOD OF USING SAME Abstract of the Disclosure A plasma pinch system includes a fluid-jet pinch device for establishing a plasma source composed of a tenuous vapor preconditioning cloud surrounding a central narrow flowing find stream of fluid under pressure. A discharge device is connected electrically to the fluid-jet pinch device for supplying an electrical flow through a portion of the fluid stream for establishing an incoherent light emitting plasma therealong. A method of using the plasma pinch system for manufacturing semiconductors, includes exposing a semiconductor wafer to the incoherent light emitted by the plasma for either annealing or etching purposes.
Electrodes, lithium-ion batteries, and methods of making and using same
Номер патента: US20240282934A1. Автор: Gleb Yushin,Benjamin Hertzberg,Patrick Dixon,Oleksandr Magazynskyy. Владелец: Sila Nanotechnologies Inc. Дата публикации: 2024-08-22.