Technique for fabricating complementary dielectrically isolated wafer
Номер патента: CA1297210C
Опубликовано: 10-03-1992
Автор(ы): Daniel David Leffel, William Graham Easter
Принадлежит: American Telephone and Telegraph Co Inc
Опубликовано: 10-03-1992
Автор(ы): Daniel David Leffel, William Graham Easter
Принадлежит: American Telephone and Telegraph Co Inc
Реферат: Technique For Fabricating Complementary Dielectrically Isolated Wafer Abstract A method has been developed for providing tub regions with various resistivities in a dielectrically isolated (DI) structure. The starting substrate material is etched to expose the locations designated for a resistivity modification, and epitaxial material of the modified resistivity value is used to fill the exposed tubs. The remainder of the fabrication process follows conventional DI fabrication techniques. The procedure may simply be used to create a DI structure containingboth n-type and p-type tub regions. The idea may also be extended, however, to providing separate tubs with, for example, n+ resistivity, n- resistivity, p-resistivity and p+ resistivity, all within the same DI structure.
Bulk Nanosheet with Dielectric Isolation
Номер патента: US20230197781A1. Автор: Kangguo Cheng,Bruce B. Doris,Junli Wang. Владелец: Tessera LLC. Дата публикации: 2023-06-22.