Method of preparing monocrystalline layers
Номер патента: GB948997A
Опубликовано: 05-02-1964
Автор(ы):
Принадлежит: SIEMENS AG, Siemens and Halske AG
Опубликовано: 05-02-1964
Автор(ы):
Принадлежит: SIEMENS AG, Siemens and Halske AG
Реферат: <PICT:0948997/C3/1> A monocrystalline layer of a semi-conductor is vapour deposited on a substrate such as quartz or rock salt, through an adjustable aperture such as an iris diaphragm, placed between the source and the substrate, so that the initial deposit is in the form of a punctiform speck and the aperture is then enlarged to give the required area of deposit. The coating materials are Si, Ge, or other substances of Group 4 of the Periodic Table and the intermetallic compounds Aiii Bv, Aii Bvi, Ai Bvii. Doping materials such as phosphorus and boron may also be evaporated either separately or together with the semi-conductor materials. As shown in the drawing an iris diaphragm 6 is placed between a source rod 1 and a carrier 4 heated by heater 5, the diaphragm being closed at the start so that the carrier can be outgassed and the initial vapour which may be contaminated is deposited on the diaphragm. The carrier 4 is heated to below the melting temperature of the coating material and several layers of material of different conductivity may be deposited by evaporating rods of different conductivity through separate diaphragms. The substrate may also be moved relative to the diaphragm which may be in the form of a wedge shaped slot.
Method of producing composite substrate sic and method of making a semiconductor substrate
Номер патента: RU2720397C2. Автор: Содзи АКИЯМА,Йосихиро КУБОТА,Хироюки НАГАСАВА. Владелец: Кусик Инк.. Дата публикации: 2020-04-29.