Heterojunction p-i-n diode and method of making the same
Опубликовано: 02-02-2005
Автор(ы): David Russell Hoag, James Joseph Brogle, Timothy Edward Boles
Принадлежит: MA Com Inc
Реферат: A heterojunction P-I-N diode (300) switch comprises a first (20) layer of doped semiconductor material of a first doping type, a second layer (40) of doped semiconductor material of a second doping type and a substrate(50) on which is disposed the first and second layers (20, 40). An intrinsic layer (30) of semiconductor material is disposed between the first layer (20) and second layer (40). The semiconductor material composition of at least one of the first layer (20) and second layer (40) is sufficiently different from that of the intrinsic layer (30) so as to form a heterojunction therebetween, creating an energy barrier in which injected carriers from the junction are confined by the barrier, effectively reducing the series resistance within the I region of the P-I-N diode and the insertion loss relative to that of homojunction P-I-N diodes.
Heterojunction p-i-n diode and method of making the same
Номер патента: WO2003094245A1. Автор: Timothy Edward Boles,James Joseph Brogle,David Russell Hoag. Владелец: M/A-Com, Inc.. Дата публикации: 2003-11-13.