Integrated circuit device including stacked transistors and methods of fabrication the same.

Integrated circuit device including stacked transistors and methods of fabrication the same

Номер патента: US20240363633A1
Опубликовано: 31-10-2024
Автор(ы): Jaehong Lee, Kang-ill Seo, Myung YANG, Seungchan Yun, Sooyoung Park
Принадлежит: SAMSUNG ELECTRONICS CO LTD
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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