Aufbringung von Schutzmaterial auf Wafer-Ebene bei einem Eingangsprozess für Frühphasen-Teilchen- und -Feuchtigkeitsschutz

Ein Halbleiterbauelement und ein Verfahren zur Herstellung desselben werden derart bereitgestellt, dass ein Element mit mikroelektromechanischen Systemen (MEMS-Element) in einer frühen Herstellungsphase geschützt wird. Ein Verfahren zum Schützen eines MEMS-Elements beinhaltet folgende Schritte: Bereitstellen zumindest eines MEMS-Elements mit einem empfindlichen Bereich auf einem Substrat; und Aufbringen, vor einem Package-Zusammenbau-Prozess, eines Schutzmaterials über dem empfindlichen Bereich des zumindest einen MEMS-Elements, so dass der empfindliche Bereich zumindest eines MEMS-Elements vor einer äußeren Umgebung abgedichtet ist, wobei das Schutzmaterial eine Sensorfunktionalität des zumindest einen MEMS-Elements erlaubt. A semiconductor device and a method of making the same are provided so as to protect an element with microelectromechanical systems (MEMS element) in an early manufacturing stage. A method for protecting a MEMS element includes the steps of: providing at least one MEMS element having a sensitive area on a substrate; and applying, prior to a package assembly process, a protective material over the sensitive area of the at least one MEMS element such that the sensitive area of at least one MEMS element is sealed from an external environment, the protective material having a sensor functionality of the at least one MEMS -Elements allowed.

Substrate device and sticking method

A substrate device includes a first substrate, a second substrate stacked on the first substrate, and a sticking piece. The first substrate contains a surface-modified area. The second substrate cooperates with the first substrate to define a space and contains a surface-modified area bound to the surface-modified area of the first substrate. The sticking piece is disposed into the space and is used to bind the first substrate to the second substrate. The substrate device in this invention has advantages of preventing separation of the first substrate and the second substrate due to external force and preventing entrance of moisture via an interface between the first substrate and the second substrate. The invention also provides a sticking method adapted for making the same.

Sensor with protective layer

DEPOSITION OF PROTECTIVE MATERIAL AT WAFER LEVEL IN FRONT END FOR EARLY STAGE PARTICLE AND MOISTURE PROTECTION

A semiconductor device and a method of manufacturing the same are provided such that a microelectromechanical systems (MEMS) element is protected at an early manufacturing stage. A method for protecting a MEMS element includes: providing at least one MEMS element, having a sensitive area, on a substrate; and depositing, prior to a package assembly process, a protective material over the sensitive area of the at least one MEMS element such that the sensitive area of at least one MEMS element is sealed from an external environment, where the protective material permits a sensor functionality of the at least one MEMS element.

SENSOR PACKAGE

A sensor package is disclosed. One embodiment provides a sensor device having a carrier, a semiconductor sensor mounted on the carrier and an active surface. Contact elements are electrically connecting the carrier with the semiconductor sensor. A protective layer made of an inorganic material covers at least the active surface and the contact elements.

Actuator layer patterning with polysilicon and etch stop layer

A method includes forming an etch stop layer over a first side of a device wafer. The method also includes forming a polysilicon layer over the etch stop layer. A handle wafer is fusion bonded to the first side of the device wafer. A eutectic bond layer is formed on a second side of the device wafer. A micro-electro-mechanical system (MEMS) features are etched into the second side of the device wafer to expose the etch stop layer. The exposed etch stop layer is removed to expose the polysilicon layer. The exposed polysilicon layer is removed to expose a cavity formed between the handle wafer and the device wafer.

Verfahren zur Herstellung eines MEMS-Sensors

Die Erfindung betrifft ein Verfahren zum Herstellen eines MEMS-Sensors, umfassend die Schritte- Bereitstellen einer MEMS-Struktur, welche zumindest einen Zugang für eine Aussparung in der MEMS-Struktur aufweist,- Aufbringen der MEMS-Struktur auf einer Trägerstruktur, dergestalt, sodass durch die Aussparung der MEMS-Struktur eine Kaverne zwischen Trägerstruktur und MEMS-Struktur gebildet wird, die über den zumindest einen Zugang mit einem Medium beaufschlagbar ist,- Abdichten eines Zwischenraums zwischen der MEMS-Struktur und der Trägerstruktur, sodass die Kaverne bis auf den zumindest einen Zugang abgedichtet ist, und- Verfüllen der Kaverne und des zumindest einen Zugangs über den zumindest einen Zugang mit einem Medium.

Environmentally protected sensing device

A device includes a die comprising a sensor. The device also includes a substrate that is coupled to the die via the electrical coupling. The device further includes a packaging container. The packaging container and the substrate form a housing for the die. The packaging container comprises an opening that exposes at least a portion of the die to an environment external to the housing. The exposed surfaces of the die, interior of the housing, the electrical coupling, and the substrate to the environment external to the housing through the opening are coated with a conformal film. The conformal film prevents liquid, e.g., water, gas, etc., contact to the exposed surfaces of the die, the electrical coupling and the substrate.

WAFER-LEVEL PACKAGE WITH ENHANCED PERFORMANCE

The present disclosure relates to a wafer-level package that includes a first thinned die, a multilayer redistribution structure, a first mold compound, and a second mold compound. The first thinned die includes a first device layer formed from glass materials. The multilayer redistribution structure includes redistribution interconnects that connect the first device layer to package contacts on a bottom surface of the multilayer redistribution structure. Herein, the connections between the redistribution interconnects and the first device layer are solder-free. The first mold compound resides over the multilayer redistribution structure and around the first thinned die, and extends beyond a top surface of the first thinned die to define an opening within the first mold compound and over the first thinned die. The second mold compound fills the opening and is in contact with the top surface of the first thinned die. 1. An apparatus comprising:a first thinned die comprising a first device layer, which is formed from glass materials and comprises a plurality of first die contacts at a bottom surface of the first device layer;a multilayer redistribution structure comprising a plurality of package contacts on a bottom surface of the multilayer redistribution structure and redistribution interconnects that connect the plurality of package contacts to certain ones of the plurality of first die contacts, wherein connections between the redistribution interconnects and the plurality of first die contacts are solder-free;a first mold compound residing over the multilayer redistribution structure and around the first thinned die, and extending beyond a top surface of the first thinned die to define an opening within the first mold compound and over the first thinned die, wherein the top surface of the first thinned die is exposed at a bottom of the opening; anda second mold compound filling the opening and in contact with the top surface of the first thinned die.2. The ...

Substrate assembly and method of bonding substrates

A substrate assembly includes a first substrate, a second substrate and a bonding member. The first substrate includes a first surface-modified region having a functionality different from that of a remainder region of the first substrate. The second substrate includes a second surface-modified region connected to the first surface-modified region through a physical interaction and having a functionality different from that of a remainder region of the second substrate. The first and second substrates cooperatively define a space therebetween. The bonding member is disposed within said space to bond said first and second substrates together. A method for bonding substrates is also disclosed.

3D stacked piezoresistive pressure sensor

마이크로기계 층 어셈블리

... 본 발명은, 수직으로 서로 겹쳐서 배열되고 기능적으로 서로 결합되며 서로 독립적으로 구조화된 적어도 2개의 기계적 활성 기능 층(10, 20)을 포함하는 마이크로기계 층 어셈블리(100)에 관한 것이다.

Wearable Device with Combined Sensing Capabilities

Halbleitersensorbauelement und Verfahren zum Herstellen desselben

Ein Halbleitersensorbauelement kann umfassen: ein Substrat umfassend eine erste Hauptfläche und eine zweite Hauptfläche gegenüber der ersten Hauptfläche, ein Halbleiterelement umfassend einen Erfassungsbereich, wobei das Halbleiterelement auf der ersten Hauptfläche des Substrats angeordnet und elektrisch an das Substrat gekoppelt ist, einen Deckel, der auf der ersten Hauptfläche des Substrats angeordnet ist und einen Hohlraum bildet, wobei das Halbleiterelement in dem Hohlraum angeordnet ist, und eine aufgedampfte dielektrische Beschichtung, die das Halbleiterelement und die erste Hauptfläche des Substrats bedeckt, wobei die aufgedampfte dielektrische Beschichtung eine Öffnung über dem Erfassungsbereich besitzt, wobei die zweite Hauptfläche des Substrats von der aufgedampften dielektrischen Schicht mindestens teilweise frei ist.

SENSOR WITH PROTECTIVE LAYER

A sensor comprises a sensor layer comprising a ceramic material; an adhesion layer comprising chromium, the adhesion layer adhered to one or more portions of a liquid facing surface of the sensor layer; and an isolator film comprising a polymer, the isolator film overlaying a liquid facing surface of the adhesion layer. The isolator film may be used to protect the sensor from corrosive and high temperature fluids, for example to protect the sensor from long term exposure to hot water between 85 °C and 100 °C.

보호층을 구비한 센서

... 센서는 세라믹 재료를 포함하는 센서층; 크롬을 포함하는 접착층으로서 센서층의 액체 대향면의 하나 이상의 부분에 부착된 접착층; 및 중합체를 포함하는 절연체 필름으로서 접착층의 액체 대향면을 덮는 절연체 필름을 포함한다. 절연체 필름은 부식성 유체 및 고온의 유체로부터 센서를 보호하기 위해, 예컨대, 85℃ 내지 100℃의 온수에의 장기간 노출로부터 센서를 보호하기 위해 사용될 수 있다.

Hybrid Diamond-Polymer Thin Film Sensors And Fabrication Method

An implantable device is provided. The implantable device includes a flexible polymeric substrate that extends through an aperture in an electrically conductive material to form an anchor that partially covers the electrically conductive material. Methods for fabricating the implantable device are also provided.

DEPOSITION OF PROTECTIVE MATERIAL AT WAFER LEVEL IN FRONT END FOR EARLY STAGE PARTICLE AND MOISTURE PROTECTION

A semiconductor device and a method of manufacturing the same are provided such that a microelectromechanical systems (MEMS) element is protected at an early manufacturing stage. A method for protecting a MEMS element includes: providing at least one MEMS element, having a sensitive area, on a substrate; and depositing, prior to a package assembly process, a protective material over the sensitive area of the at least one MEMS element such that the sensitive area of at least one MEMS element is sealed from an external environment, where the protective material permits a sensor functionality of the at least one MEMS element.

MIKROFONGEHÄUSE FÜR VOLLUMMANTELTE ASIC UND DRÄHTE UND DARAUF GERICHTETES HERSTELLUNGSVERFAHREN

Mikrofonvorrichtung, umfassend:ein Gehäuse, das ein Substrat mit einer ersten Oberfläche und einer über dem Substrat angeordneten Abdeckung umfasst, wobei das Gehäuse eine Schallöffnung zwischen dem Inneren des Gehäuses und der Außenseite des Gehäuses umfasst;einen Mikroelektromechanisches-System (MEMS) -Wandler, der auf dem Substrat montiert ist;eine integrierte Schaltung (IC), die auf dem Substrat montiert ist;den MEMS-Wandler, der elektrisch mit der IC verbunden ist;wobei die IC elektrisch mit einem Leiter auf dem Substrat verbunden ist;ein Ummantelungsmaterial, das den IC bedeckt; undeine Ummantelungsmaterial-Einschließungsstruktur, die zwischen dem MEMS-Wandler und dem IC angeordnet ist, wobei die Ummantelungsmaterial-Einschließungsstruktur das Ummantelungsmaterial wenigstens teilweise um den IC herum einschließt;wobei die Ummantelungsmaterial-Einschließungsstruktur einen Wandabschnitt umfasst, der zwischen dem MEMS-Wandler und dem IC angeordnet ist; undwobei das Substrat einen Hohlraum ...

MEMS device and method of forming the same

The embodiments of the disclosure relates to a microelectromechanical system (MEMS) device and method of forming the same, including depositing a first electrode layer over a first piezoelectric layer. A hard mask layer is then deposited over the first electrode layer. A photoresist mask is formed on the hard mask layer with a first-electrode pattern. Using the photoresist mask, a first etch is performed into the hard mask layer to transfer the first-electrode pattern to the hard mask layer. The photoresist mask is then removed. A second etch is performed using the hard mask layer to transfer the first-electrode pattern to the first electrode layer, and the hard mask layer is removed.

VHF etch barrier for semiconductor integrated microsystem

The present disclosure relates to an integrated microsystem with a protection barrier structure, and an associated method. In some embodiments, the integrated microsystem comprises a first die having a plurality of CMOS devices disposed thereon, a second die having a plurality of MEMS devices disposed thereon and a vapor hydrofluoric acid (vHF) etch barrier structure disposed between the first die and the second die. The second die is bonded to the first die at a bond interface region. The vHF etch barrier structure comprises a vHF barrier layer over an upper surface of the first die, and a stress reduction layer arranged between the vHF etch barrier layer and the upper surface of the first die.

Hermetisch abgeschlossener Halbleiter-Drucksensor

Ein Halbleitersensor umfasst eine Halbleiteranordnung mit einer Oberseite und einer Unterseite; einem Substrat mit einer Kavität; einer Membran an der Unterseite des Substrats, im Bereich der Kavität; ein Sensierelement an der Membran; und einen Anschluss, der elektrisch mit dem Sensierelement verbunden ist. Dabei ist der Anschluss von der Oberseite des Substrats aus zugänglich.

3D-gestapelter piezoresistiver Drucksensor

In einem Mikroelektromechaniksystem(MEMS)-Drucksensor werden dünne und empfindliche Bonddrähte, die im Stand der Technik verwendet werden, um ein MEMS-Druckmesselement mit einem anwendungsspezifischen integrierten Schaltkreis (ASIC) für die Eingangs- und Ausgangs-Signale zwischen diesen beiden Chips zu verbinden, ersetzt durch Stapeln des ASIC auf das MEMS-Druckmesselement und Miteinanderverbinden unter Verwendung von leitfähigen Kontaktierungen, die in dem ASIC ausgebildet sind. Gel, das zum Schutz der Bonddrähte, des ASIC und des MEMS-Druckmesselements verwendet wird, kann weggelassen werden, falls Bonddrähte nicht weiter verwendet werden. Das Stapeln des ASIC auf dem MEMS-Druckmesselement und das Verbinden dieser unter Verwendung von leitfähigen Kontaktierungen ermöglicht eine Verringerung hinsichtlich Größe und Kosten eines Gehäuses, in welchem die Vorrichtungen platziert und geschützt sind.

MICRO-ELECTROMECHANICAL SYSTEM AND METHOD FOR FABRICATING MEMS HAVING PROTECTION WALL

A micro electromechanical system (MEMS) includes a substrate, a semiconductor device and a protection wall. The substrate has a surface. The semiconductor device is disposed on the surface. The protection wall has a poly-silicon layer surrounding the semiconductor device and connecting to the surface.

METHOD AND DEVICE FOR PREVENTING CORROSION ON SENSORS

A device for preventing corrosion on sensors and a method of fabricating the same is disclosed, wherein the device comprises an insulation layer (400) and an adhesion layer (200) covering a metallization layer (300) of a silicon sensor with a corrosion resistant layer (100) located over the adhesion layer (200).

STRUCTURE FOR DEVICE WITH INTEGRATED MICROELECTROMECHANICAL SYSTEMS

L'invention concerne un procédé de fabrication d'une structure comprenant la fourniture d'un substrat donneur comportant une face avant et une face arrière et d'un substrat support (20), ledit substrat donneur comprenant une couche d'arrêt (2) enterrée et une couche active fine (3) présentant une première épaisseur inférieure à l'épaisseur utile, entre la face avant du substrat donneur et la couche d'arrêt, la formation d'une couche intermédiaire (30) sur la face avant du substrat donneur ou sur le substrat support, l'assemblage desdits substrats pour disposer la couche intermédiaire entre eux, l'amincissement de la face arrière du substrat donneur pour former une couche utile (100) d'une épaisseur utile présentant une première face disposée sur la couche intermédiaire et une seconde face (12') libre, le retrait dans des premières zones (110) de la structure d'une couche active épaisse (4) délimitée par la seconde face libre de la couche utile et la couche d'arrêt.

STRUCTURE POUR DISPOSITIF AVEC MICROSYSTEMES ELECTROMECANIQUES INTEGRES

L'invention concerne un procédé de fabrication d'une structure comprenant la fourniture d'un substrat donneur comportant une face avant et une face arrière et d'un substrat support (20), ledit substrat donneur comprenant une couche d'arrêt (2) enterrée et une couche active fine (3) présentant une première épaisseur inférieure à l'épaisseur utile, entre la face avant du substrat donneur et la couche d'arrêt, la formation d'une couche intermédiaire (30) sur la face avant du substrat donneur ou sur le substrat support, l'assemblage desdits substrats pour disposer la couche intermédiaire entre eux, l'amincissement de la face arrière du substrat donneur pour former une couche utile (100) d'une épaisseur utile présentant une première face disposée sur la couche intermédiaire et une seconde face (12') libre, le retrait dans des premières zones (110) de la structure d'une couche active épaisse (4) délimitée par la seconde face libre de la couche utile et la couche d'arrêt.

Release chemical protection for integrated complementary metal-oxide-semiconductor (cmos) and micro-electro-mechanical (mems) devices

本發明提供系統及方法，其保護CMOS層免於暴露於釋放化學物質。該釋放化學物質被用於釋放與CMOS晶圓集積的微機電(MEMS)裝置。在互補金屬氧化物半導體(CMOS)晶圓中創建的鈍化開口的側壁暴露出該CMOS晶圓的介電層，其可能在與釋放化學物質接觸時而受到損傷。在一個態樣中，為了保護CMOS晶圓以及避免介電層的暴露，該鈍化開口的側壁可以用對該釋放化學物質具有抗性的金屬阻障層覆蓋。額外地或可選地，絕緣阻障層可以沉積在CMOS晶圓的表面上，以保護鈍化層免於暴露於釋放化學物質。

CMOS Based Devices for Harsh Media

A semiconductor device comprises a first doped semiconductor layer, a second doped semiconductor layer, an oxide layer covering the first doped semiconductor layer and the second doped semiconductor layer, and an interconnect. The first doped semiconductor layer is electrically connected with the second doped semiconductor layer by means of the interconnect which crosses over a sidewall of the second doped semiconductor layer. The interconnect comprises a metal filled slit in the oxide layer. At least one electronic component is formed in the first and/or second semiconductor layer. The semiconductor device moreover comprises a passivation layer which covers the first and second doped semiconductor layers and the oxide layer.

Microphone package for fully encapsulated ASIC and wires

A microphone device includes a housing including a substrate having a first surface and a cover disposed over the substrate, the housing including a sound port between the interior of the housing and the exterior of the housing. The device also includes a microelectromechanical systems (MEMS) transducer mounted on the substrate and an integrated circuit (IC) mounted on the substrate. The MEMS transducer of the device is electrically connected to the IC, and the IC of the device is electrically connected to a conductor on the substrate. An encapsulating material covers the IC. And an encapsulating material confinement structure is disposed between the MEMS transducer and the IC, wherein the encapsulating material confinement structure at least partially confines the encapsulating material around the IC.

CMOS-MEMS INTEGRATED DEVICE WITH SELECTIVE BOND PAD PROTECTION

A method and system for preparing a semiconductor wafer are disclosed. In a first aspect, the method comprises providing a passivation layer over a patterned top metal on the semiconductor wafer, etching the passivation layer to open a bond pad in the semiconductor wafer using a first mask, depositing a protection layer on the semiconductor wafer, patterning the protective layer using a second mask, and etching the passivation layer to open other electrodes in the semiconductor wafer using a third mask. The system comprises a MEMS device that further comprises a first substrate and a second substrate bonded to the first substrate, wherein the second substrate is prepared by the aforementioned steps of the method.

REFLECTIVE DEVICE

A reflective device comprising, a comprising, a movable element which comprises a reflective surface, wherein the movable element can oscillate about at least one oscillation axis to scan light; one or more holder elements which co-operate with the movable element to hold the movable element in a manner which will allow the movable element to oscillate about the at least one oscillation axis to scan light, wherein the one or more holder elements are configured to define a region which can receive at least a portion of the movable element as the movable element oscillates when the reflective device is mounted on a surface; a magnetic element which is secured to a fixed part of the reflective device; one or more electrically conductive means positioned on the movable element so that one or more electrically conductive means can operatively co-operate with a magnetic field provided by the magnetic element to effect oscillation of the moveable element, wherein the one or more electrically conductive means are completely embedded in the movable element. There is further provided a projection device having such a reflective device and a corresponding method of manufacturing a reflective device

Planarization layers over silicon dies

A microfluidic apparatus may include, in an example, a substrate, at least one silicon die embedded into the substrate, and a planarization layer layered over, at least, a portion of the substrate that interfaces with the silicon die to prevent a fluid from contacting an edge of the silicon die.

Mikroelektromechanisches Bauteil sowie ein Verfahren zu seiner Herstellung

Bei einem erfindungsgemäßen mikroelektromechanisches Bauteil sind mindestens ein mikroelektromechanisches Element (5), elektrische Kontaktierungselemente (3) und eine Isolationsschicht (2.2) und darauf eine Opferschicht (2.1), die mit Siliziumdioxid gebildet ist, auf einer Oberfläche eines CMOS-Schaltkreissubstrates (1) ausgebildet und das mikroelektromechanische Element (5) ist in mindestens einem Freiheitsgrad frei beweglich angeordnet. Am äußeren Rand des mikroelektromechanischen Bauteils, radial um alle Elemente des CMOS-Schaltkreises umlaufend ist eine gegenüber Flusssäure resistente, gas- und/oder fluiddichte geschlossene Schicht (4), die mit Silizium, Germanium oder Aluminiumoxid gebildet ist, auf der Oberfläche des CMOS-Schaltkreissubstrates (1) ausgebildet.

Mikromechanische Schichtenanordnung

Mikromechanische Schichtenanordnung (100), aufweisend: wenigstens zwei voneinander unabhängig strukturierte mechanisch aktive Funktionsschichten (10, 20), die vertikal übereinander angeordnet und funktional miteinander gekoppelt sind.

Mikroelektronische Bauelementanordnung und entsprechendes Herstellungsverfahren für eine mikroelektronische Bauelementanordnung

Die Erfindung schafft eine mikroelektronische Bauelementanordnung und ein entsprechendes Herstellungsverfahren für eine mikroelektronische Bauelementanordnung. Die mikroelektronische Bauelementanordnung umfasst einen Sensor, wobei der Sensor zumindest eine Detektionsfläche aufweist und ein Auswertesubstrat mit einer Montagefläche, wobei der Sensor mittels einer Aufbau- und Verbindungseinrichtung auf dem Auswertesubstrat aufgebracht ist und die Detektionsfläche der Montagefläche einen Zwischenraum aufweisend gegenüberliegt, und wobei in dem Zwischenraum zumindest bereichsweise ein drucksensitives Material angeordnet ist und das drucksensitiven Material mittelbar oder unmittelbar mit der Detektionsfläche in Kontakt steht. The invention provides a microelectronic component arrangement and a corresponding production method for a microelectronic component arrangement. The microelectronic component arrangement comprises a sensor, wherein the sensor has at least one detection surface and an evaluation substrate with a mounting surface, the sensor being mounted on the evaluation substrate by means of a construction and connection device and the detection surface of the mounting surface having a gap, and wherein in the intermediate space at least in regions, a pressure-sensitive material is arranged and the pressure-sensitive material is indirectly or directly in contact with the detection surface.

Method for producing a microelectromechanical component, and wafer assembly

The invention relates to a method for producing a microelectromechanical component, and to a wafer assembly. The method comprises the following steps: providing a first wafer having a plurality of microelectromechanical base elements (110a); forming a container structure (112a) on top of or against each of the microelectromechanical base elements (110a) at the wafer level; and arranging an oil (40) or a gel within the container structures (112a).

High performance sealed-gap capacitive microphone

Some preferred embodiments include a microphone system for receiving sound waves, the microphone including a back plate, a radiation plate, first and second electrodes, first and second insulator layers, a power source and a microphone controller. The radiation plate is clamped to the back plate so that there is a hermetically sealed circular gap between the radiation plate and the back plate. The first electrode is fixedly attached to a side of the back plate proximate to the gap. The second electrode is fixedly attached to a side of the radiation plate. The insulator layers are attached to the back plate and/or the radiation plate, on respective gap sides thereof, so that the insulator layers are between the electrodes. The microphone controller is configured to use the power source to drive the microphone at a selected operating point comprising normalized static mechanical force, bias voltage, and relative bias voltage level. A radius and height of the gap, and a thickness of the radiation plate, are determined using the selected operating point so that a sensitivity of the microphone at the selected operating point is an optimum sensitivity for the selected operating point.

RELEASE CHEMICAL PROTECTION FOR INTEGRATED COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) AND MICRO-ELECTRO-MECHANICAL (MEMS) DEVICES

Systems and methods that protect CMOS layers from exposure to a release chemical are provided. The release chemical is utilized to release a micro-electro-mechanical (MEMS) device integrated with the CMOS wafer. Sidewalls of passivation openings created in a complementary metal-oxide-semiconductor (CMOS) wafer expose a dielectric layer of the CMOS wafer that can be damaged on contact with the release chemical. In one aspect, to protect the CMOS wafer and prevent exposure of the dielectric layer, the sidewalls of the passivation openings can be covered with a metal barrier layer that is resistant to the release chemical. Additionally, or optionally, an insulating barrier layer can be deposited on the surface of the CMOS wafer to protect a passivation layer from exposure to the release chemical. 1. An integrated device , comprising:a complementary metal-oxide-semiconductor (CMOS) wafer; anda micro-electro-mechanical (MEMS) device integrated with the CMOS wafer, wherein the MEMS device comprises sacrificial layer that is removable by utilization of a release chemical, andwherein the CMOS wafer comprises a passivation layer with an opening having a sidewall that exposes a dielectric layer of the CMOS wafer and a barrier material, comprising a metal resistant to the release chemical, that covers the sidewall.2. The integrated device of claim 1 , wherein the barrier material is formed by depositing the metal on the integrated circuit substrate and patterning the metal to leave a portion of the metal that forms the barrier layer on the sidewall.3. The integrated device of claim 2 , wherein the depositing comprises depositing the barrier material based on sputtering.4. The integrated device of claim 2 , wherein the depositing comprises depositing the barrier material based on evaporation.5. The integrated device of claim 2 , wherein the depositing comprises depositing the barrier material based on atomic layer deposition.6. The integrated device of claim 2 , wherein the ...

MICROPHONE PACKAGE

A microphone includes a housing including a substrate and a cover disposed over the substrate, the housing including a sound port between the interior of the housing and the exterior of the housing. The microphone also includes a microelectromechanical systems (MEMS) transducer and an integrated circuit (IC) positioned within the housing and mounted on a common surface of the housing, where the MEMS transducer is electrically connected to the IC, and the IC is electrically connected to a conductor on the substrate. The microphone further includes an encapsulating material covering the IC, and an encapsulating material confinement structure disposed between the MEMS transducer and the IC, where the encapsulating material confinement structure at least partially confines the encapsulating material around the IC. 1. A microphone device , comprising:a housing including a substrate and a cover disposed over the substrate, the housing including a sound port between the interior of the housing and the exterior of the housing;a microelectromechanical systems (MEMS) transducer and an integrated circuit (IC) positioned within the housing and mounted on a common surface of the housing, the MEMS transducer electrically connected to the IC, and the IC electrically connected to a conductor on the substrate;an encapsulating material covering the IC; andan encapsulating material confinement structure disposed between the MEMS transducer and the IC, wherein the encapsulating material confinement structure at least partially confines the encapsulating material around the IC.2. The microphone device of claim 1 , wherein the encapsulating material completely covers the IC.3. The microphone device of claim 1 , wherein the encapsulating material confinement structure includes a wall portion disposed between the MEMS transducer and the IC.4. The microphone device of claim 3 , wherein the substrate is the common surface of the housing claim 3 , wherein the MEMS transducer and the IC are ...

METHOD TO PROTECT ELECTRODES FROM OXIDATION IN A MEMS DEVICE

In some embodiments, the present disclosure relates to a method for forming a microelectromechanical system (MEMS) device, including depositing a first electrode layer over a first piezoelectric layer. A hard mask layer is then deposited over the first electrode layer. A photoresist mask is formed on the hard mask layer with a first-electrode pattern. Using the photoresist mask, a first etch is performed into the hard mask layer to transfer the first-electrode pattern to the hard mask layer. The photoresist mask is then removed. A second etch is performed using the hard mask layer to transfer the first-electrode pattern to the first electrode layer, and the hard mask layer is removed.

ACTUATOR LAYER PATTERNING WITH POLYSILICON AND ETCH STOP LAYER

A method includes forming an etch stop layer over a first side of a device wafer. The method also includes forming a polysilicon layer over the etch stop layer. A handle wafer is fusion bonded to the first side of the device wafer. A eutectic bond layer is formed on a second side of the device wafer. A micro-electro-mechanical system (MEMS) features are etched into the second side of the device wafer to expose the etch stop layer. The exposed etch stop layer is removed to expose the polysilicon layer. The exposed polysilicon layer is removed to expose a cavity formed between the handle wafer and the device wafer.

Method for producing a microelectromechanical component and water assembly

3D stacked piezoresistive pressure sensor

A pressure sensor device 600 comprises: a MEMS pressure sensing element 602 with first and second sides, a flexible diaphragm and a Wheatstone bridge on the first side; a first integrated circuit (IC) 204 comprising a substrate with first and second sides, electronic circuitry on the first side and a recess 222 on the second side, the second side being attached to the first side of the sensing element 602, the recess defining an evacuated cavity between the IC and sensing element; and a plurality of conductive vias 206 in the first IC substrate, connecting the Wheatstone bridge to circuitry on the IC. In a second aspect the device also comprises: a housing with a pocket enclosing the device and a pressure port allowing fluid to apply pressure to the diaphragm; and a lead frame extending from an electrical contact on the first side of the IC, comprising a solder bump and conductive adhesive, through the housing. In a third aspect the device also comprises: a bond wire extending from the ...

REFLECTIVE DEVICE

A reflective device comprising, a comprising, a movable element which comprises a reflective surface, wherein the movable element can oscillate about at least one oscillation axis to scan light; one or more holder elements which co-operate with the movable element to hold the movable element in a manner which will allow the movable element to oscillate about the at least one oscillation axis to scan light, wherein the one or more holder elements are configured to define a region which can receive at least a portion of the movable element as the movable element oscillates when the reflective device is mounted on a surface; a magnetic element which is secured to a fixed part of the reflective device; one or more electrically conductive means positioned on the movable element so that one or more electrically conductive means can operatively co-operate with a magnetic field provided by the magnetic element to effect oscillation of the moveable element, wherein the one or more electrically conductive means are completely embedded in the movable element. There is further provided a projection device having such a reflective device and a corresponding method of manufacturing a reflective device.

High performance sealed-gap capacitive microphone

Some preferred embodiments include a microphone system for receiving sound waves, the microphone including a back plate, a radiation plate, first and second electrodes, first and second insulator layers, a power source and a microphone controller. The radiation plate is clamped to the back plate so that there is a hermetically sealed circular gap between the radiation plate and the back plate. The first electrode is fixedly attached to a side of the back plate proximate to the gap. The second electrode is fixedly attached to a side of the radiation plate. The insulator layers are attached to the back plate and/or the radiation plate, on respective gap sides thereof, so that the insulator layers are between the electrodes. The microphone controller is configured to use the power source to drive the microphone at a selected operating point comprising normalized static mechanical force, bias voltage, and relative bias voltage level. A radius and height of the gap, and a thickness of the radiation ...

Dielectric cladding of microelectromechanical systems (MEMS) elements for improved reliability

In described examples, a method of forming a microelectromechanical device comprises: forming a first metallic layer comprising a conducting layer on a substrate; forming a first dielectric layer on the first metallic layer, wherein the first dielectric layer comprises one or more individual dielectric layers; forming a sacrificial layer on the first dielectric layer; forming a second dielectric layer on the sacrificial layer; forming a second metallic layer on the second dielectric layer; and removing the sacrificial layer to form a spacing between the second dielectric layer and the first dielectric layer. Removing the sacrificial layer enables movement of the second dielectric layer relative to the first dielectric layer in at least one direction.

MIKROFONGEHÄUSE FÜR VOLLUMMANTELTE ASIC UND DRÄHTE

Eine Mikrofonvorrichtung umfasst ein Substrat mit einem Hohlraum. Die Vorrichtung umfasst auch einen mikroelektromechanischen System (MEMS)-Wandler, der auf dem Substrat außerhalb des Hohlraums montiert ist, und eine anwendungsspezifische integrierte Schaltung, die in dem Hohlraum montiert ist. Ein erster Satz von Bonddrähten verbindet den MEMS-Wandler mit dem ASIC und ein zweiter Satz von Bonddrähten verbindet die ASIC mit einem Leiter innerhalb des Hohlraums. Ein Ummantelungsmaterial bedeckt die ASIC und wenigstens einen Teil des zweiten Kabelsatzes vollständig und ist im Wesentlichen im Hohlraum eingeschlossen. Eine Abdeckung ist über dem Substrat angebracht, um den MEMS-Wandler, das Ummantelungsmaterial, die ASIC, den ersten Satz Bonddrähte und den zweiten Satz Bonddrähte abzudecken.

MEMS device and manufacturing method thereof and electronic device

Microphone package

A microphone includes a substrate defining an embedded cavity between a first surface of the substrate and an opposing second surface of the substrate, the first surface defining a first opening into the embedded cavity, a distance between the first surface and the second surface defining a substrate thickness. A cover is disposed over the first surface of the substrate and forms a housing, the cover including a port, the substrate thickness being greater than a height of the cover from the first surface of the substrate. A microelectromechanical systems (MEMS) transducer is disposed in the housing and mounted on the first surface of the substrate over the first opening, and an integrated circuit (IC) is disposed in the housing and electrically coupled to the MEMS transducer. The MEMS transducer and the IC are disposed in a front volume of the housing defined by the cover and the substrate.

A MICROFLUIDIC SENSOR

A microfluidic sensor comprising: a first substrate; a second substrate; a cavity formed between the first substrate and the second substrate, the cavity comprising a reservoir portion and a channel portion extending from the reservoir portion; a capacitive element disposed between the first substrate and the second substrate, the capacitive element being at least partially disposed in the channel portion of the cavity; and a dielectric sensing liquid provided in the reservoir portion. Upon application of a force to the first substrate adjacent the reservoir portion, the reservoir portion is configured to deform and displace the sensing liquid along the channel portion, so as to change the capacitance of the capacitive element within the channel portion.

ナノ構造物を含む3次元ナノ素子

... 3Dナノ構造物を含む3Dナノ素子を提供する。3Dナノ素子は、基板の上に設けられた振動部と振動部の長さ方向の両端部を支持する支持部とを備える1つ以上のナノ構造物と、ナノ構造物の支持部を支持するために基板上に形成される支持台と、基板の上部、下部、又は両方に形成され、ナノ構造物を制御する1つ以上の制御部と、振動部上に形成され、外部から流入される物質を感知する感知部とを含む。これにより一般の平面構造とは異なり、ナノ素子と基板との間に発生する不純物形成を低減し、機械的振動を引き起こすことができる。特に、3Dナノ構造物は、機械的及び電気的特性を有するため、新しいナノ構造物を含む3Dナノ素子がナノ電気機械特性を用いて提供される。単電子素子、スピン素子、SET-FETハイブリッド素子を平面素子とは異なる処理を用いて形成することができる。 ...

MEMS-Mikrofon mit reduzierter parasitärer Kapazität und Verfahren zur Herstellung eines MEMS-Mikrofons

MEMS-Mikrofon, aufweisend:- eine Membran (M) in einer Membranschicht, eine erste Rückplatte (BP) in einer ersten Rückplattenschicht, ein Ankerelement (AN) in einer Ankerschicht zwischen der Membranschicht und der ersten Rückplattenschicht, eine Schutzschicht (PF),- eine aktive Region (AAR) und eine Randregion (RR), die die aktive Region (AAR) umgibt,wobei- die Schutzschicht (PF) die erste Rückplatte (BP) und/oder das Ankerelement (AN) in der Randregion (RR) abdeckt,- das Ankerelement die Rückplatte mechanisch mit der Membran verbindet,- das Ankerelement in lateraler Richtung bündig mit der ersten Rückplatte abschließt, so dass· die Randfläche des Ankerelements und die Randfläche der ersten Rückplatte direkt übereinander angeordnet sind und· die Schutzschicht die Randfläche des Ankerelements und die Randfläche der ersten Rückplatte gleichzeitig abdeckt, so dass ein Ätzmittel das Material des Ankerelements von der Randseite des Mikrofons aus nicht beschädigen kann.

3D STACKED PIEZORESISTIVE PRESSURE SENSOR

In a microelectromechanical system (MEMS) pressure sensor, thin and fragile bond wires that are used in the prior art to connect a MEMS pressure sensing element to an application specific integrated circuit (ASIC) for the input and output signals between these two chips are replaced by stacking the ASIC on the MEMS pressure sensing element and connecting each other using conductive vias formed in the ASIC. Gel used to protect the bond wires, ASIC and MEMS pressure sensing element can be eliminated if bond wires are no longer used. Stacking the ASIC on the MEMS pressure sensing element and connecting them using conductive vias enables a reduction in the size and cost of a housing in which the devices are placed and protected.

CMOS-MEMS INTEGRATED DEVICE WITH SELECTIVE BOND PAD PROTECTION

A method and system for preparing a semiconductor wafer are disclosed. In a first aspect, the method comprises providing a passivation layer over a patterned top metal on the semiconductor wafer, etching the passivation layer to open a bond pad in the semiconductor wafer using a first mask, depositing a protection layer on the semiconductor wafer, patterning the protective layer using a second mask, and etching the passivation layer to open other electrodes in the semiconductor wafer using a third mask. The system comprises a MEMS device that further comprises a first substrate and a second substrate bonded to the first substrate, wherein the second substrate is prepared by the aforementioned steps of the method. 1. A method , comprising:depositing a protection layer over an etched passivation layer and at least one bond pad on a semiconductor wafer;bonding the semiconductor wafer to another wafer; andetching the protection layer from the at least one bond pad of the semiconductor wafer.2. The method of claim 1 , wherein the depositing the protection layer comprises depositing a non-conductive protection layer.3. The method of claim 1 , wherein the depositing the protection layer comprises depositing at least one of an oxide layer claim 1 , a silicon nitride (SiN) layer claim 1 , or a titanium nitride (TiN) layer.4. The method of claim 1 , wherein the depositing the protection layer comprises depositing a material employed as the etched passivation layer of the semiconductor wafer claim 1 , wherein the etched passivation layer is disposed over a top metal layer of the semiconductor wafer.5. The method of claim 4 , further comprising:etching the passivation layer to create the etched passivation layer and to open the at least one bond pad in the semiconductor wafer using a first mask; andpatterning the protection layer using a second mask.6. The method of claim 1 , wherein the etching the protection layer from the at least one bond pad comprises at least one of ...

Hybrid diamond-polymer thin film sensors and fabrication method

An implantable device is provided. The implantable device includes a flexible polymeric substrate that extends through an aperture in an electrically conductive material to form an anchor that partially covers the electrically conductive material. Methods for fabricating the implantable device are also provided.

Method and device for preventing corrosion on sensors

A device for preventing corrosion on sensors and a method of fabricating the same is disclosed, wherein the device comprises an insulation layer (400) and an adhesion layer (200) covering a metallization layer (300) of a silicon sensor with a corrosion resistant layer (100) located over the adhesion layer (200).

Sensor mit Schutzschicht

Ein Sensor umfasst eine Sensorschicht, umfassend ein Keramikmaterial; eine Haftschicht, die Chrom umfasst, wobei die Haftschicht an einem oder mehreren Abschnitten einer einer Flüssigkeit zugewandten Oberfläche der Sensorschicht haftet; und eine Isolatorfolie, die ein Polymer umfasst, wobei die Isolatorfolie über einer einer Flüssigkeit zugewandten Oberfläche der Haftschicht liegt. Die Isolatorfolie kann zum Schützen des Sensors gegen korrosive und Hochtemperaturfluide, beispielsweise zum Schützen des Sensors gegen Langzeitexposition heißem Wasser zwischen 85°C und 100°C gegenüber, verwendet werden.

CMOS-MEMS integrated device with selective bond pad protection

A method and system for preparing a semiconductor wafer are disclosed. In a first aspect, the method comprises providing a passivation layer over a patterned top metal on the semiconductor wafer, etching the passivation layer to open a bond pad in the semiconductor wafer using a first mask, depositing a protection layer on the semiconductor wafer, patterning the protective layer using a second mask, and etching the passivation layer to open other electrodes in the semiconductor wafer using a third mask. The system comprises a MEMS device that further comprises a first substrate and a second substrate bonded to the first substrate, wherein the second substrate is prepared by the aforementioned steps of the method.

MICROFLUIDIC PASSAGE WITH PROTECTIVE LAYER

A microfluidic die may include a microfluidic passage and a protective layer provided adjacent to internal surfaces of the microfluidic passage. The protective layer may include a protective nano-crystalline material and a protective amorphous matrix encapsulating the protective nano-crystalline material.

GAS SENSOR AND MANUFACTURING METHOD THEREOF

Provided is a gas sensor including a substrate, a first membrane disposed on the substrate, a heating structure disposed on the first membrane, a second membrane disposed on the heating structure, a sensing electrode disposed on the second membrane, and a sensing material structure disposed on the sensing electrode. Here, the substrate provides an isolation space defined by a recessed surface obtained as a portion of a top surface of the substrate is spaced downward from a bottom surface of the first membrane, and the first membrane provides a first membrane etching hole that vertically extends to connect a top surface and the bottom surface of the first membrane and is connected with the isolation space. Also, the first membrane etching hole has a diameter of about 3 μm to about 20 μm.

A corrosion tolerant micro-electromechanical fluid ejection device

Aspects of the present disclosure are directed to an apparatus including a circuit region and a fluidic region. In a particular example, the circuit region with logical circuits thereon, includes a thermal oxide layer on a silicon substrate, and a dielectric layer over the field oxide layer, the dielectric layer including a doped dielectric film. The microfluidic device further includes a fluidic region including fluid ports formed through a surface of the apparatus and including an un-doped dielectric film. The fluidic region includes an aperture in the dielectric layer, where the aperture is defined by a dielectric wall which forms part of the dielectric layer. A sealing film deposited over the dielectric wall may prevent the doped dielectric film from contacting fluid contained in the fluid port.

Microelectromechanical component and method for producing same

In a microelectromechanical component according to the invention, at least one microelectromechanical element (5), electrical contacting elements (3) and an insulation layer (2.2) and thereon a sacrificial layer (2.1) formed with silicon dioxide are formed on a surface of a CMOS circuit substrate (1) and the microelectromechanical element (5) is arranged freely movably in at least one degree of freedom. At the outer edge of the microelectromechanical component, extending radially around all the elements of the CMOS circuit, a gas- and/or fluid-tight closed layer (4) which is resistant to hydrofluoric acid and is formed with silicon, germanium or aluminum oxide is formed on the surface of the CMOS circuit substrate (1).

Method to protect electrodes from oxidation in a MEMS device

In some embodiments, the present disclosure relates to a method for forming a microelectromechanical system (MEMS) device, including depositing a first electrode layer over a first piezoelectric layer. A hard mask layer is then deposited over the first electrode layer. A photoresist mask is formed on the hard mask layer with a first-electrode pattern. Using the photoresist mask, a first etch is performed into the hard mask layer to transfer the first-electrode pattern to the hard mask layer. The photoresist mask is then removed. A second etch is performed using the hard mask layer to transfer the first-electrode pattern to the first electrode layer, and the hard mask layer is removed.

THREE DIMENSIONAL NANO DEVICES INCLUDING NANO STRUCTURE

본 발명은 3차원 나노 구조물을 이용한 3차원 나노 소자에 관한 것으로, 본 3차원 나노 소자는 기판 상부에 부양된 진동부와 상기 진동부의 길이 방향의 양단부를 지지하는 지지부를 구비하는 하나이상의 나노 구조물; 상기 나노 구조물의 지지부를 지지하기 위해 상기 기판 상에 형성되는 지지대; 상기 나노 구조물의 진동부 하부에 상기 나노 구조물과 교차되도록 형성되어 상기 나노 구조물을 제어하는 하나이상의 제어부; 및 상기 진동부 상에 형성되어 외부에서 유입 및 흡착되는 물질을 감지하는 감지부를 포함한다. The present invention relates to a three-dimensional nano-device using a three-dimensional nanostructure, the three-dimensional nano-device comprises at least one nanostructure having a vibrating portion supported on the substrate and the support for supporting both ends in the longitudinal direction of the vibrating portion; A support formed on the substrate to support the support of the nanostructure; At least one controller formed under the vibrating portion of the nanostructure to cross the nanostructure to control the nanostructure; And a sensing unit formed on the vibrating unit and sensing a material introduced and adsorbed from the outside. 이에 따라, 일반적인 평면 구조에서 나노 소자와 기판 사이에 발생하는 불순물 형성을 줄일 수 있으며, 평면 구조에서 발생하지 않는 기계적 떨림 현상을 형성 시킬 수 있다. 특히, 3차원 나노구조물을 형성함으로써 기계적 전기적 특성을 가지게 하여 나노 전기적 기계특성(nanomechanical system; nems)으로부터 새로운 형태의 나노 구조물을 포함한 3차원 나노 소자를 제공할 수 있을 뿐만 아니라 평면 구조에서 형성하기 어려웠던 단전자 소자, 스핀 소자, 단전자 소자와 전계효과 트랜지스터와의 결합 등을 용이하게 형성할 수 있다. Accordingly, it is possible to reduce the formation of impurities generated between the nano device and the substrate in a general planar structure, and to form a mechanical shaking phenomenon that does not occur in the planar structure. In particular, by forming a three-dimensional nanostructure has a mechanical and electrical properties to provide a three-dimensional nanodevice including a new type of nanostructure from nano-electromechanical system (nanomechanical system; nems) as well as difficult to form in a planar structure It is possible to easily form a single electron element, a spin element, a combination of a single electron element and a field effect transistor, and the like. 3차원 나노 구조물, 진동부, 질량 분석 소자, 전자 소자 3D nano structure, ...

STRESSED DECOUPLED MICRO-ELECTRO-MECHANICAL SYSTEM SENSOR

A semiconductor device may include a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device. The stress decoupling structure may include a set of trenches that are substantially perpendicular to a main surface of the semiconductor device. The first region may include a micro-electro-mechanical (MEMS) structure. The semiconductor device may include a sealing element to at least partially seal openings of the stress decoupling structure.

AMORPHOUS THIN METAL FILM

An amorphous thin film stack can include a first layer including a combination metals or metalloids including: 5 at % to in 90 at % of a metalloid; 5 at % to 90 at % of a first metal and a second metal independently selected from titanium, vanadium, chromium, iron, cobalt, nickel, niobium, molybdenum, ruthenium, rhodium, palladium, tantalum, tungsten, osmium, iridium, or platinum. The three elements may account for at least 70 at % of the amorphous thin film stack. The stack can further include a second layer formed on a surface of the first layer. The second layer can be an oxide layer, a nitride layer, or a combination thereof. The second layer can have an average thickness of 10 angstroms to 200 microns and a thickness variance no greater than 15% of the average thickness of the second layer. 1. An amorphous thin film stack , comprising: 5 at % to 90 at % of a metalloid, wherein the metalloid is carbon, silicon, or boron,', '5 at % to 90 at % of a first metal, wherein the first metal is titanium, vanadium, chromium, iron, cobalt, nickel, niobium, molybdenum, ruthenium, rhodium, palladium, tantalum, tungsten, osmium, iridium, or platinum, and', '5 at % to 90 at % of a second metal, wherein the second metal is titanium, vanadium, chromium, iron, cobalt, nickel, niobium, molybdenum, ruthenium, rhodium, palladium, tantalum, tungsten, osmium, iridium, or platinum, wherein the second metal is different than the first metal,', 'wherein the metalloid, the first metal, and the second metal account for at least 70 at % of the amorphous thin metal film; and, 'a first layer of an amorphous thin metal film, comprisinga second layer formed on a surface of the first layer, the second layer being an oxide layer, a nitride layer, or a combination thereof, and the second layer having an average thickness of 10 angstroms to 200 microns and having a thickness variance no greater than 15% of the average thickness of the second layer.2. The amorphous thin film stack of claim 1 , ...

INSULATED SENSORS

The present disclosure is drawn to an insulated sensor including a silicon substrate with active circuitry on a surface thereof, an electrode disposed on the silicon substrate, a passivation layer having a thickness from greater than 500 Angstroms to 3,000 Angstroms disposed on the active circuitry, and an electrode insulating layer having a thickness from 10 Angstroms to 500 Angstroms disposed on the electrode.

Structure for device with integrated microelectromechanical systems

A method for manufacturing a structure comprises a) providing a donor substrate comprising front and rear faces; b) providing a support substrate; c) forming an intermediate layer on the front face of the donor substrate or on the support substrate; d) assembling the donor and support substrates with the intermediate layer therebetween; e) thinning the rear face of the donor substrate to form a useful layer of a useful thickness having a first face disposed on the intermediate layer and a second free face; and wherein the donor substrate comprises a buried stop layer and a fine active layer having a first thickness less than the useful thickness, between the front face of the donor substrate and the stop layer; and after step e), removing, in first regions of the structure, a thick active layer delimited by the second free face of the useful layer and the stop layer.

Sensor device manufacturing method and sensor device

A method for manufacturing a sensor device is provided. The method prevents corrosion of metal electrodes of a sensor due to outside air with high humidity and preventing the occurrence of warpage of the sensor due to resin sealing of the sensor, thereby reducing the influence on sensor characteristics, and provides the sensor device. The method includes arranging a sensor on a substrate, the sensor having a fixed part, a movable part positioned inside the fixed part, a flexible part connecting the fixed part and the movable part, and a plurality of metal electrodes, electrically connecting the plurality of metal electrodes of the sensor and a plurality of terminals of the substrate with bonding wires, and covering portions of the plurality of metal electrodes of the sensor connected to the bonding wires with a resin so that a part of the bonding wires between the plurality of metal electrodes and the plurality of terminals is exposed.

Corrosion tolerant micro-electromechanical fluid ejection device

A microfluidic device including a fluid ejection channel defined by a fluid barrier and an orifice, or nozzle, for containing and/or passing fluids, and further including micro-electromechanical systems (MEMS) and/or electronic circuitry may be fabricated on a silicon substrate and included in a fluid ejection system. Various microfabrication techniques used for fabricating semiconductor devices may be used to manufacture such microfluidic devices.

Mikroelektromechanische Struktur enthaltendes Halbleiterbauelement; MEMS-Sensor und Verfahren

Ein Halbleiterbauelement kann eine Spannungsentkopplungsstruktur zum zumindest teilweisen Entkoppeln eines ersten Gebiets des Halbleiterbauelements und eines zweiten Gebiets des Halbleiterbauelements enthalten. Die Spannungsentkopplungsstruktur kann eine Gruppe von Gräben enthalten, die im Wesentlichen senkrecht zu einer Hauptfläche des Halbleiterbauelements verlaufen. Das erste Gebiet kann eine MEMS-Struktur (MEMS, mikroelektromechanisches System) enthalten. Das Halbleiterbauelement kann ein Dichtungselement zum zumindest teilweisen Abdichten von Öffnungen der Spannungsentkopplungsstruktur enthalten.

A REFLECTIVE DEVICE

A reflective device comprising, a comprising, a movable element which comprises a reflective surface, wherein the movable element can oscillate about at least one oscillation axis to scan light; one or more holder elements which co-operate with the movable element to hold the movable element in a manner which will allow the movable element to oscillate about the at least one oscillation axis to scan light, wherein the one or more holder elements are configured to define a region which can receive at least a portion of the movable element as the movable element oscillates when the reflective device is mounted on a surface; a magnetic element which is secured to a fixed part of the reflective device; one or more electrically conductive means positioned on the movable element so that one or more electrically conductive means can operatively co-operate with a magnetic field provided by the magnetic element to effect oscillation of the moveable element, wherein the one or more electrically conductive ...

Circuit device

A circuit device is provided which can be manufactured at reduced costs and which is highly reliable. The circuit device includes a Sensor area formed on part of a semiconductor substrate, a circuit area formed around the sensor area on the semiconductor substrate to process electric signals produced at the sensor area, and a sealring disposed between the sensor area and the circuit area. The sealring is disposed between the outer periphery of the sensor area and the inner periphery of the circuit area to surround the sensor area. In the circuit device, the sealring prevents water or moisture from infiltrating from the sensor area into the circuit area.

Sensorvorrichtung, Sensorpackage und Verfahren

Eine Sensorvorrichtung kann eine Basisschicht und ein auf der Basisschicht angeordnetes ASIC-Element aufweisen. Das ASIC-Element kann mehrere elektrische Kontaktpunkte aufweisen. Die Sensorvorrichtung kann ein MEMS-Element aufweisen. Das MEMS-Element kann mehrere Silizium-Durchkontaktierungen aufweisen. Die Sensorvorrichtung kann mehrere leitende Kontaktelemente aufweisen. Jedes leitende Kontaktelement kann zwischen einer jeweiligen Silizium-Durchkontaktierung und einem jeweiligen elektrischen Kontaktpunkt angeordnet sein und diese elektrisch koppeln. Die Sensorvorrichtung kann eine zwischen dem ASIC-Element und dem MEMS-Element angeordnete Schutzschicht aufweisen. Die Schutzschicht kann aus einem oder mehreren Materialien mit einer physikalischen Eigenschaft bestehen, die definiert ist, um zu ermöglichen, dass die Schutzschicht vom ASIC-Element auf das MEMS-Element einwirkende mechanische Spannungskräfte abschwächt, Korrosion verhindert und/oder einen Leckstrom zwischen elektrischen Verbindungen ...

Sensorelement zur kapazitiven Differenzdruckmessung

Es wird ein kapazitiver Differenzdrucksensor mit einem einfachen Aufbau vorgeschlagen, der auch in aggressiven Messumgebungen zuverlässige Messergebnisse liefert. Das Sensorelement (10) zur kapazitiven Differenzdruckmessung umfasst eine Sensormembran (11), die in einem Schichtaufbau auf einem Halbleitersubstrat (1) realisiert ist und eine Kaverne (12) überspannt. In die Kaverne (12) mündet ein Druckanschluss (13). Das Sensorelement (10) umfasst ferner einen Messkondensator mit einer beweglichen Elektrode (15) auf der Sensormembran (11) und einer feststehenden Gegenelektrode (16), die gegenüber der beweglichen Elektrode (15) auf dem Boden der Kaverne (12) angeordnet ist. Erfindungsgemäß ist die Kaverne (12) mit einem dielektrischen Fluid (17) verfüllt.

WAFER-LEVEL PACKAGE WITH ENHANCED PERFORMANCE

Structure for device with integrated microelectromechanical systems

MEMS-MICROPHONE WITH REDUCED PARASITIC CAPACITANCE

A MEMS microphone with reduced parasitic capacitance is provided. Therefore, a microphone comprises a protection film covering a rim-sided area of the backplate.

THREE DIMENSIONAL NANO DEVICES INCLUDING NANO STRUCTURES CAPABLE OF BEING USED FOR ACTIVE DRIVING DEVICES AND SENSORS

PURPOSE: A three dimensional nano device including nano structures is provided to complement electrical devices and optical devices to each other by improving electrical characteristics of nano device presented in a two-dimensional plane structure. CONSTITUTION: A three dimensional nano device including nano structures comprises: at least one nano structure having a vibration unit(111) formed above a substrate and a support unit(112) supporting the both ends of the vibration unit; a support stand(120) formed on the substrate to support the support unit of the nano structures; a controller, formed in an upper part or lower part of the substrate or both sides of the upper part and lower part, for controlling the nano structures; a sensing unit(150) formed on the vibration unit to sense materials which are flowed in from the outside; and an external vibration unit formed in the lower part of the substrate. © KIPO 2009 ...

Environmentally protected sensing device

A device includes a die comprising a sensor. The device also includes a substrate that is coupled to the die via the electrical coupling. The device further includes a packaging container. The packaging container and the substrate form a housing for the die. The packaging container comprises an opening that exposes at least a portion of the die to an environment external to the housing. The exposed surfaces of the die, interior of the housing, the electrical coupling, and the substrate to the environment external to the housing through the opening are coated with a conformal film. The conformal film prevents liquid, e.g., water, gas, etc., contact to the exposed surfaces of the die, the electrical coupling and the substrate.

Method of improving getter efficiency by increasing superficial area

The present disclosure relates to a method of gettering that provides for a high efficiency gettering process by depositing a gettering material on a roughened substrate surface, and an associated apparatus. In some embodiments, the method is performed by providing a substrate into a processing chamber having residual gases. One or more cavities are formed in the substrate at locations between bonding areas on a top surface of the substrate. Respective cavities have roughened interior surfaces that vary in a plurality of directions. A getter layer is deposited into the one or more cavities. The roughened interior surfaces of the one or more cavities enable the substrate to more effectively absorb the residual gases, thereby increasing the efficiency of the gettering process.

SENSOR PACKAGE

A sensor device may include a base layer, and an ASIC element disposed on the base layer. The ASIC element may include a plurality of electrical contact points. The sensor device may include a MEMS element. The MEMS element may include a plurality of through-silicon vias. The sensor device may include a plurality of conductive contact elements. Each conductive contact element may be disposed between, and electrically coupling, a respective through-silicon via and a respective electrical contact point. The sensor device may include a protective layer disposed between the ASIC element and the MEMS element. The protective layer may be composed of material(s) having a physical property defined to permit the protective layer to mitigate stress forces directed from the ASIC element to the MEMS element, to prevent corrosion, and/or to prevent leakage current between electrical connections due to pollution and/or humidity.

Structure for device with integrated microelectromechanical systems

The invention relates to a method for manufacturing a structure (410, 410', 410'', 420, 430) comprising: (a) the provision of a donor substrate comprising a front face and a rear face; (b) the provision of a support substrate (20); (c) the formation of an intermediate layer (30) on the front face of the donor substrate or on the support substrate (20); (d) the assembly of the donor substrate and support substrate (20) in order to dispose the intermediate layer (30) between the two substrates; (e) the thinning of the rear face of the donor substrate in order to form a useful layer (100) of a useful thickness having a first face disposed on the intermediate layer (30) and a second free face (12'); the method being remarkable in that: the donor substrate comprises a buried stop layer (2) and a fine active layer (3) having a first thickness less than the useful thickness, between the front face of the donor substrate and the stop layer (2); after step (e), the method comprises the removal, ...

Semiconductor Sensor Device and Method for Fabricating the Same

A semiconductor sensor device includes a substrate including a first main face and a second main face opposite the first main face, a semiconductor element including a sensing region, the semiconductor element on the first main face of the substrate and being electrically coupled to the substrate, a lid on the first main face of the substrate and forming a cavity, wherein the semiconductor element is in the cavity, and a vapor deposited dielectric coating covering the semiconductor element and the first main face of the substrate, the vapor deposited dielectric coating having an opening over the sensing region, wherein the second main face of the substrate is at least partially free of the vapor deposited dielectric layer.

Device Package with Reduced Radio Frequency Losses

A device package includes a semiconductor device. The semiconductor device is disposed on a substrate. The device package further includes a covering. The covering is disposed on the substrate and surrounds the semiconductor device. The covering includes a void, a first layer, and a second layer. The void is between an interior surface of the covering and the semiconductor device. The first layer has a first electrical conductivity and a first thickness. The second layer is disposed under the first layer. The second layer has a second electrical conductivity and a second thickness. The first electrical conductivity is greater than the second electrical conductivity. The first thickness is less than the second thickness.

METHOD FOR PRODUCING A MICROELECTROMECHANICAL COMPONENT AND WAFER SYSTEM

A method for producing a microelectromechanical component as well as a wafer system includes steps of: providing a first wafer having a plurality of microelectromechanical base elements; forming a respective container structure on the microelectromechanical base elements at the wafer level; and disposing an oil or a gel within the container structures.

MEMS-Mikrofon mit reduzierter parasitärer Kapazität

Es wird ein MEMS-Mikrofon mit reduzierter parasitärer Kapazität bereitgestellt. Daher weist ein Mikrofon eine Schutzschicht auf, der einen randseitigen Bereich der Rückplatte abdeckt.

Microelectromechanical component and method of manufacturing the same

Manufacturing a corrosion tolerant micro-electromechanical fluid ejection device

Aspects are directed to techniques for fabricating a microfluidic device on a substrate. In a particular example, a method of manufacturing a microfluidic device includes growing a thermal oxide layer on a substrate and depositing a dielectric layer, including doped a dielectric film, over the thermal oxide layer. Next, an aperture defined by a dielectric wall which forms part of the dielectric layer is formed in the dielectric layer by selectively removing the dielectric film. Finally, the aperture is sealed with a sealing film to prevent the dielectric film from being exposed to a fluid contained in the aperture. The sealing film may be of an electrically insulating material resistive to corrosive attributes of the fluid contained in the aperture.

3D stacked piezoresistive pressure sensor

In a microelectromechanical system (MEMS) pressure sensor, thin and fragile bond wires that are used in the prior art to connect a MEMS pressure sensing element to an application specific integrated circuit (ASIC) for the input and output signals between these two chips are replaced by stacking the ASIC on the MEMS pressure sensing element and connecting each other using conductive vias formed in the ASIC. Gel used to protect the bond wires, ASIC and MEMS pressure sensing element can be eliminated if bond wires are no longer used. Stacking the ASIC on the MEMS pressure sensing element and connecting them using conductive vias enables a reduction in the size and cost of a housing in which the devices are placed and protected.

CMOS based devices for harsh media

A semiconductor device comprises a first doped semiconductor layer, a second doped semiconductor layer, an oxide layer covering the first doped semiconductor layer and the second doped semiconductor layer, and an interconnect. The first doped semiconductor layer is electrically connected with the second doped semiconductor layer by means of the interconnect which crosses over a sidewall of the second doped semiconductor layer. The interconnect comprises a metal filled slit in the oxide layer. At least one electronic component is formed in the first and/or second semiconductor layer. The semiconductor device moreover comprises a passivation layer which covers the first and second doped semiconductor layers and the oxide layer.

MICROMECHANICAL LAYER SYSTEM

A micromechanical layer system, having at least two mechanically active functional layers patterned independently of each other, which are arranged vertically one on top of the other and are functionally coupled to each other. 110-. (canceled)11. A micromechanical layer system , comprising:at least two mechanically active functional layers, patterned independently of each other, which are arranged vertically one on top of the other and are functionally coupled to each other.12. The micromechanical layer system as recited in claim 11 , wherein at least one of the two functional layers has a spring element.13. The micromechanical layer system as recited in claim 11 , wherein a bottom side of the second functional layer has a reflective coating.14. The micromechanical layer system as recited in claim 11 , wherein the second functional layer is an SOI wafer or a silicon wafer.15. The micromechanical layer system as recited in claim 11 , wherein the layer system is capped on top by a third functional layer and on the bottom by a fourth functional layer.16. The micromechanical layer system as recited in claim 15 , wherein the third functional layer has notches on top.17. The micromechanical layer system as recited in claim 15 , wherein the fourth functional layer is one of planar or kinked.18. The micromechanical layer system as recited in claim 11 , wherein a defined gas atmosphere is enclosed in a cavity between the functional layers.19. A method for producing a micromechanical layer system claim 11 , comprising:providing and patterning a first functional layer;providing and patterning a second functional layer; andarranging the two functional layers vertically one on top of the other, the two functional layers being functionally coupled to each other.20. The method as recited in claim 19 , further comprising:providing a third and a fourth functional layer;arranging the third functional layer on the layer system made up of the first functional layer and the second ...

METHOD AND DEVICE FOR PREVENTING CORROSION ON SENSORS

A device for preventing corrosion on sensors and a method of fabricating the same is disclosed, wherein the device comprises an insulation layer and an adhesion layer covering a metallization layer of a silicon sensor with a corrosion resistant layer located over the adhesion layer.

SEMICONDUCTOR CHIP

Aspects of the invention relate to a semiconductor chip comprising a substrate and a stack arranged on the substrate. The stack comprises one or more insulating layers and one or more metal layers. The chip comprises a sensor device arranged in a sensor area (SA) of the semiconductor chip and processing circuitry arranged in a processing area (PA) of the semiconductor chip. The chip further comprises connection circuitry configured to provide an electrical connection between the sensor device and the processing circuitry. A first seal ring structure is arranged between an outer edge (ED) of the chip and an inner area (IA) of the chip. The inner area (IA) of the chip encompasses the sensor area (SA) and the processing area (PA). A second seal ring structure is arranged between the sensor area (SA) and the processing area (PA) and configured to constrain an infiltration of contaminants from the sensor area (SA) to the processing area (PA).

Insulated sensors

The present disclosure is drawn to an insulated sensor including a silicon substrate with active circuitry on a surface thereof, an electrode disposed on the silicon substrate, a passivation layer having a thickness from greater than 500 Angstroms to 3,000 Angstroms disposed on the active circuitry, and an electrode insulating layer having a thickness from 10 Angstroms to 500 Angstroms disposed on the electrode.

Sensorbaustein

Es wird ein Sensorbaustein offenbart. Eine Ausführungsform stellt ein Sensorbauelement mit einem Träger, einem auf dem Träger montierten Halbleitersensor und einer aktiven Oberfläche bereit. Kontaktelemente verbinden den Träger elektrisch mit dem Halbleitersensor. Eine aus einem anorganischen Material hergestellte Schutzschicht bedeckt mindestens die aktive Oberfläche und die Kontaktelemente.

MEMS-microphone with reduced parasitic capacitance

A MEMS microphone with reduced parasitic capacitance is provided. A microphone includes a protection film covering a rim-sided area of the backplate.

SUBSTRATE ASSEMBLY AND METHOD OF BONDING SUBSTRATES

A substrate assembly includes a first substrate, a second substrate and a bonding member. The first substrate includes a first surface-modified region having a functionality different from that of a remainder region of the first substrate. The second substrate includes a second surface-modified region connected to the first surface-modified region through a physical interaction and having a functionality different from that of a remainder region of the second substrate. The first and second substrates cooperatively define a space therebetween. The bonding member is disposed within said space to bond said first and second substrates together. A method for bonding substrates is also disclosed. 1. A substrate assembly , comprising:a first substrate including a first surface-modified region, which has a functionality different from that of a remainder region of said first substrate,a second substrate including a second surface-modified region connected to said first surface-modified region through a physical interaction, and having a functionality different from that of a remainder region of said second substrate, said first and second substrates cooperatively defining a space therebetween; anda bonding member disposed within said space to bond said first and second substrates together.2. The substrate assembly as claimed in claim 1 , wherein:said second substrate is formed with a recess, said recess being defined by a recess-defining surface that has a second connecting surface and a surrounding surface extending upwardly from said second connecting surface, said second connecting surface having said second surface-modified region; andsaid first substrate is disposed within said recess and further includes a first connecting surface and a first peripheral surface connected to and angularly extending from said first connecting surface, said first connecting surface having said first surface-modified region, said first peripheral surface and said recess-defining surface ...

Anordnung mit einem Trägersubstrat und einem Leistungsbauelement

Es wird eine Anordnung (10) vorgeschlagen. Die Anordnung (10) umfasst ein Trägersubstrat (12) und ein Leistungsbauelement (14). Das Trägersubstrat (12) weist mindestens eine Leiterbahn (16) auf. Das Leistungsbauelement (14) weist Anschlusskontakte (20) auf und ist mit der Leiterbahn (16) elektrisch kontaktiert. Um die Anschlusskontakte (20) ist eine Metallisierung (24) ausgebildet.

METHOD FOR PRODUCING A MICROELECTROMECHANICAL SENSOR AND MICROELECTROMECHANICAL SENSOR

A method for producing a microelectromechanical sensor. The microelectromechanical sensor is produced by connecting a cap wafer to a sensor wafer. The cap wafer has a bonding structure for connecting the cap wafer to the sensor wafer. The sensor wafer has a sensor core having a movable structure. The cap wafer has a stop structure for limiting an excursion of the movable structure. The method includes a first step and a second step following the first step, the stop surface of the stop structure being situated at the level of the original surface of the unprocessed cap wafer. 19-. (canceled)10. A method for producing a microelectromechanical sensor , the method comprising:connecting a cap wafer with a sensor wafer, the cap wafer having a bonding structure for connecting the cap wafer with the sensor wafer, the sensor wafer having a sensor core having a movable structure, and the cap wafer having a stop structure configured to limit an excursion of the movable structure;wherein the method has a first step and a second step following the first step, a hard mask being applied onto a subregion of the cap wafer in the first step, the masked subregion of the cap wafer defining a stop surface of the stop structure, a bonding layer being applied onto the cap wafer in the second step, and the bonding structure being produced by etching the bonding layer.11. The method as recited in claim 10 , wherein the movable structure of the sensor core includes two substructures connected to one another by a polysilicon bridge claim 10 , such that claim 10 , in a rest state of the movable structure claim 10 , the polysilicon bridge is at a distance claim 10 , in a direction of excursion claim 10 , from an immovable structure of the sensor core.12. The method as recited in claim 10 , wherein claim 10 , in a third step claim 10 , preceding the first step claim 10 , an oxide layer is applied onto the cap wafer and a protective structure is produced by etching the oxide layer claim 10 , the ...

RELEASE CHEMICAL PROTECTION FOR INTEGRATED COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) AND MICRO-ELECTRO-MECHANICAL (MEMS) DEVICES

Systems and methods that protect CMOS layers from exposure to a release chemical are provided. The release chemical is utilized to release a micro-electro-mechanical (MEMS) device integrated with the CMOS wafer. Sidewalls of passivation openings created in a complementary metal-oxide-semiconductor (CMOS) wafer expose a dielectric layer of the CMOS wafer that can be damaged on contact with the release chemical. In one aspect, to protect the CMOS wafer and prevent exposure of the dielectric layer, the sidewalls of the passivation openings can be covered with a metal barrier layer that is resistant to the release chemical. Additionally or optionally, an insulating barrier layer can be deposited on the surface of the CMOS wafer to protect a passivation layer from exposure to the release chemical. 1. A method , comprising:creating an opening in a passivation layer of a integrated circuit substrate, wherein a sidewall of the opening exposes a dielectric layer of the integrated circuit substrate; anddepositing a barrier layer on the sidewall to protect the dielectric layer from a release chemical employable to release a micro-electro-mechanical (MEMS) device integrated with the integrated circuit substrate, wherein the barrier layer comprises a metal.2. The method of claim 1 , wherein the depositing comprises depositing the metal on the integrated circuit substrate and patterning the metal to leave a portion of the metal that forms the barrier layer on the sidewall.3. The method of claim 2 , wherein the depositing the metal comprises depositing at least one of Aluminum claim 2 , Aluminum-Copper claim 2 , Titanium claim 2 , or Titanium Nitride.4. The method of claim 1 , further comprising:exposing the MEMS device integrated with the integrated circuit substrate to the release chemical, wherein the exposing facilitates a removal of a sacrificial layer of the MEMS device.5. The method of claim 4 , wherein the exposing comprises exposing the MEMS device to at least one of ...

SUBSTRATE ASSEMBLY AND METHOD OF BONDING SUBSTRATES

A substrate assembly includes a first substrate, a second substrate and a bonding member. The first substrate includes a first surface-modified region having a functionality different from that of a remainder region of the first substrate. The second substrate includes a second surface-modified region connected to the first surface-modified region through a physical interaction and having a functionality different from that of a remainder region of the second substrate. The first and second substrates cooperatively define a space therebetween. The bonding member is disposed within said space to bond said first and second substrates together. A method for bonding substrates is also disclosed. 1. A substrate assembly , comprising:a first substrate including a first connecting surface, a first non-connecting surface opposite to said first connecting surface, a first peripheral surface interconnecting said first connecting surface to said first non-connecting surface, and a first surface-modified region which is formed on said first connecting surface, and which has a functionality different from those of said first non-connecting surface and said first peripheral surface,a second substrate including a second connecting surface, a second peripheral surface extending from said second connecting surface, and a second surface-modified region that is formed on said second connecting surface, and that is directly connected to said first surface-modified region through a physical interaction, said second surface-modified region having a functionality different from that of said second peripheral surface; anda bonding member bonding said first and second substrates together, said bonding member being filled in a space which is formed between said first substrate and said second substrate, and which steers clear of an interface between said first surface-modified region and said second surface-modified region.2. The substrate assembly as claimed in claim 1 , wherein:said second ...

A CORROSION TOLERANT MICRO-ELECTROMECHANICAL FLUID EJECTION DEVICE

A microfluidic device including a fluid ejection channel defined by a fluid barrier and an orifice, or nozzle, for containing and/or passing fluids, and further including micro-electromechanical systems (MEMS) and/or electronic circuitry may be fabricated on a silicon substrate and included in a fluid ejection system. Various microfabrication techniques used for fabricating semiconductor devices may be used to manufacture such microfluidic devices. 1. An apparatus comprising: a thermal oxide layer on a silicon substrate;', 'a dielectric layer over the thermal oxide layer, the dielectric layer including the doped dielectric film; and, 'a circuit region with logical circuits thereon and including a doped dielectric film, the circuit region including an aperture in the dielectric layer, wherein the aperture is defined by a dielectric wall which forms part of the dielectric layer; and', 'a sealing film over the dielectric wall that prevents the doped dielectric film from contacting fluid contained in the fluid port., 'a fluidic region including a fluid port formed through a surface of the apparatus, the fluidic region including2. The apparatus of claim 1 , wherein the sealing film includes an un-doped dielectric film over the dielectric wall.3. The apparatus of claim 1 , wherein the sealing film is an electrically insulating and corrosion resistant barrier to the doped dielectric film.4. The apparatus of claim 1 , wherein a portion of the aperture terminates at a termination point in the thermal oxide layer.5. The apparatus of claim 1 , wherein a portion of the aperture terminates at a termination point in the substrate.6. The apparatus of claim 1 , wherein a portion of the aperture terminates at the thermal oxide layer.7. The apparatus of claim 1 , wherein a portion of the aperture terminates at the silicon substrate.8. An apparatus to receive a fluid having corrosive attributes claim 1 , the apparatus comprising: a thermal oxide layer on a substrate;', 'a doped ...

RELEASE CHEMICAL PROTECTION FOR INTEGRATED COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) AND MICRO-ELECTRO-MECHANICAL (MEMS) DEVICES

Systems and methods that protect CMOS layers from exposure to a release chemical are provided. The release chemical is utilized to release a micro-electro-mechanical (MEMS) device integrated with the CMOS wafer. Sidewalls of passivation openings created in a complementary metal-oxide-semiconductor (CMOS) wafer expose a dielectric layer of the CMOS wafer that can be damaged on contact with the release chemical. In one aspect, to protect the CMOS wafer and prevent exposure of the dielectric layer, the sidewalls of the passivation openings can be covered with a metal barrier layer that is resistant to the release chemical. Additionally or optionally, an insulating barrier layer can be deposited on the surface of the CMOS wafer to protect a passivation layer from exposure to the release chemical. 1. A device , comprising:an integrated circuit substrate comprising a passivation opening having a sidewall that exposes a dielectric layer of the integrated circuit substrate;a first barrier layer deposited on the sidewall that prohibits exposure of the dielectric layer to a release chemical employable to release a micro-electro-mechanical (MEMS) device integrated with the integrated circuit substrate, wherein the first barrier layer comprises a metal; anda second barrier layer comprising an electrically insulating layer deposited on a portion the first barrier layer, wherein the second barrier layer is at least partially resistant to the release chemical.2. The device of claim 1 , wherein the passivation opening exposes a metal pad of the integrated circuit substrate.3. The device of claim 2 , wherein the passivation opening facilitates a bonding that bonds the integrated circuit substrate to the MEMS device via the metal pad claim 2 , wherein the bonding comprises at least one of an eutectic bonding claim 2 , metal compression bonding claim 2 , fusion bonding claim 2 , anodic bonding claim 2 , or copper-to-copper bonding.4. The device of claim 2 , wherein the passivation ...

GLASS-SENSOR STRUCTURES

The present invention generally relates to glass-sensor structures and methods of making the same. 1. A glass-sensor structure: comprising: Layer A: a flat glass layer, optionally comprising: a reflective surface on its top or bottom; and,', 'a sensory element;, 'a sensor glass layer, comprising Layer B: a flat glass layer located on top of and at least partially in contact with Layer A, provided that if Layer B is present, Layer C is also present;', 'Layer C: a flat glass layer located on top of and at least partially in contact with Layer B, if present, or Layer A if Layer B is not present, and optionally comprising: a reflective surface on its top or bottom;', 'Layer D: a flat glass layer located on the bottom of and at least partially in contact with Layer A, provided that if Layer D is present, Layer E is also present; and', 'Layer E: a flat glass layer located on the bottom of and at least partially in contact with Layer D, if present, or Layer A if Layer D is not present, and optionally comprising: a reflective surface on its top or bottom., 'optionally, the glass-sensor structure, further comprises: from 1-4 layers selected from;'}2. The glass-sensor structure of claim 1 , wherein:the sensor glass layer, comprises: a plurality of sensory elements.3. The glass-sensor structure of claim 1 , whereinthe sensory element is in contact with at least a portion of the top of Layer A and has a smaller surface area than Layer A.4. The glass-sensor structure of claim 3 , wherein:the glass of Layer A near the edges of the sensory element is partially absent.5. The glass-sensor structure of claim 3 , wherein:the reflective surface is present on Layer A.6. The glass-sensor structure of claim 5 , wherein:the reflective surface is on the bottom of Layer A.7. The glass-sensor structure of claim 3 , wherein:Layers B and C are present.8. The glass-sensor structure of claim 7 , wherein:a middle portion of Layer B is absent, such that an inner portion of Layer B is near the edges ...

Method of Improving Getter Efficiency by Increasing Superficial Area

The present disclosure relates to a method of gettering that provides for a high efficiency gettering process by depositing a gettering material on a roughened substrate surface, and an associated apparatus. In some embodiments, the method is performed by providing a substrate into a processing chamber having residual gases. One or more cavities are formed in the substrate at locations between bonding areas on a top surface of the substrate. Respective cavities have roughened interior surfaces that vary in a plurality of directions. A getter layer is deposited into the one or more cavities. The roughened interior surfaces of the one or more cavities enable the substrate to more effectively absorb the residual gases, thereby increasing the efficiency of the gettering process.

HIGH PERFORMANCE SEALED-GAP CAPACITIVE MICROPHONE

Some preferred embodiments include a microphone system for receiving sound waves, the microphone including a back plate, a radiation plate, first and second electrodes, first and second insulator layers, a power source and a microphone controller. The radiation plate is clamped to the back plate so that there is a hermetically sealed circular gap between the radiation plate and the back plate. The first electrode is fixedly attached to a side of the back plate proximate to the gap. The second electrode is fixedly attached to a side of the radiation plate. The insulator layers are attached to the back plate and/or the radiation plate, on respective gap sides thereof, so that the insulator layers are between the electrodes. The microphone controller is configured to use the power source to drive the microphone at a selected operating point comprising normalized static mechanical force, bias voltage, and relative bias voltage level. A radius and height of the gap, and a thickness of the radiation plate, are determined using the selected operating point so that a sensitivity of the microphone at the selected operating point is an optimum sensitivity for the selected operating point. 125-. (canceled)27. The method of claim 26 , wherein the sound waves include the range of human-audible sound waves claim 26 , and the gap contains a vacuum.28. The method of claim 26 , wherein the gap radius a is related to a minimum gap radius acorresponding to the optimum sensitivity at the operating point claim 26 , and the radiation plate thickness tis related to a minimum radiation plate thickness tcorresponding to the optimum sensitivity at the operating point claim 26 , by a selected scaling constant K claim 26 , such that a=(K)a claim 26 , and t=(K)t.29. The method of claim 26 , wherein the first insulator layer and a second insulator layer will be disposed such that: both insulator layers are fixedly coupled to the radiation plate claim 26 , or both insulator layers are fixedly ...

MICROPHONE DEVICE WITH INGRESS PROTECTION

A microphone device includes a base and a microelectromechanical system (MEMS) transducer and an integrated circuit (IC) disposed on the base. The microphone device also includes a cover mounted on the base and covering the MEMS transducer and the IC. The MEMS transducer includes a diaphragm attached to a surface of the substrate and a back plate mounted on the substrate and in a spaced apart relationship with the diaphragm. The diaphragm is attached to the surface of the substrate along at least a portion of a periphery of the diaphragm. The diaphragm can include a silicon nitride insulating layer, and a conductive layer, that faces a conductive layer of the back plate. The MEMS transducer can include a peripheral support structure that is disposed between at least a portion of the diaphragm and the substrate. The diaphragm can include one or more pressure equalizing apertures. 1. A microelectromechanical system (MEMS) acoustic transducer comprising:a substrate having an opening formed therein;a diaphragm;a peripheral support structure suspending the diaphragm over the substrate, the peripheral support structure attached to at least a portion of a periphery of the diaphragm and constraining the diaphragm at the periphery, the peripheral support structure comprising a sidewall having an aperture that is structured to provide fluid communication between a front volume and a back volume of the MEMS acoustic transducer; anda back plate separated from the diaphragm and positioned on a first side of the diaphragm, wherein the substrate is positioned on a second side of the diaphragm opposite the first side of the diaphragm.2. The MEMS acoustic transducer of claim 1 , wherein the peripheral support structure includes a sacrificial material.3. The MEMS acoustic transducer of claim 2 , wherein a radially inward-facing edge of the sacrificial material includes a tapered profile between the substrate and the diaphragm.4. The MEMS acoustic transducer of claim 1 , wherein the ...

WEARABLE DEVICE WITH COMBINED SENSING CAPABILITIES

The present invention discloses a wearable device with combined sensing capabilities, which includes a wearable assembly and at least one multi-function sensor module. The wearable assembly is suitable to be worn on a part of a user's body. The wearable assembly includes at least one light-transmissible window. The multi-function sensor module is located inside the wearable assembly, for performing an image sensing function and an infrared temperature sensing function. The multi-function sensor module includes an image sensor module for sensing a physical or a biological feature of an object through the light-transmissible window by way of image sensing; and an infrared temperature sensor module for sensing temperature through the light-transmissible window by way of infrared temperature sensing. 12-. (canceled)4. The wearable device with combined sensing capabilities of claim 3 , wherein the image sensor module includes a light source and an image sensor claim 3 , the cap covering a part of the substrate and the at least one partitioning member being on the substrate claim 3 , to form at least three chambers for accommodating the light source claim 3 , the image sensor and the infrared temperature sensor module claim 3 , respectively claim 3 , wherein each of the at least three chambers has a light-transmissible zone claim 3 , and a light beam is allowed to transmit between the light-transmissible zone and the light-transmissible window of the wearable assembly.5. The wearable device with combined sensing capabilities of claim 3 , wherein the image sensor module includes a light source and an image sensor claim 3 , the image sensor and the infrared temperature sensor module being integrated as one single module.6. The wearable device with combined sensing capabilities of claim 5 , wherein the at least one multi-function sensor module further includes a substrate claim 5 , a cap and at least one partitioning member claim 5 , the cap covering a part of the substrate ...

Microphone device with ingress protection

A microphone device includes a base and a microelectromechanical system (MEMS) transducer and an integrated circuit (IC) disposed on the base. The microphone device also includes a cover mounted on the base and covering the MEMS transducer and the IC. The MEMS transducer includes a diaphragm attached to a surface of the substrate and a back plate mounted on the substrate and in a spaced apart relationship with the diaphragm. The diaphragm is attached to the surface of the substrate along at least a portion of a periphery of the diaphragm. The diaphragm can include a silicon nitride insulating layer, and a conductive layer, that faces a conductive layer of the back plate. The MEMS transducer can include a peripheral support structure that is disposed between at least a portion of the diaphragm and the substrate. The diaphragm can include one or more pressure equalizing apertures.

Electromechanical device, related manufacturing method, and related electronic device

An electromechanical device may include a first substrate, a second substrate, a connector, and a protector. The connector may be formed of a first dielectric material and may be positioned between the first substrate and the second substrate. A first side of the connector may directly contact the first substrate. The protector may be formed of a second dielectric material and may directly contact a second side of the connector.

Microelectronic device having protected connections and manufacturing process thereof

A microelectronic device includes a chip housing a functional part and carrying first electrical contact regions in electrical connection with the functional part through first protected connections extending over or in the chip. A substrate has a first contact area and a second contact area, which is remote from the first contact area. The first contact area carries second electrical contact regions, and the second contact area carries external connection regions. The second contact regions and the external connection regions are in mutual electrical connection through second protected connections extending over or in the substrate. A protection-ring structure surrounds the first and second electrical contact regions and delimits a first chamber closed with respect to the outside. The first electrical contact regions and the second electrical contact regions are in mutual electrical contact.

MICROELECTROMECHANICAL COMPONENT AND METHOD FOR PRODUCING SAME

In a microelectromechanical component according to the invention, at least one microelectromechanical element (), electrical contacting elements () and an insulation layer () and thereon a sacrificial layer () formed with silicon dioxide are formed on a surface of a CMOS circuit substrate () and the microelectromechanical element () is arranged freely movably in at least a degree of freedom. At the outer edge of the microelectromechanical component, extending radially around all the elements of the CMOS circuit, a gas- and/or fluid-tight closed layer () which is resistant to hydrofluoric acid and is formed with silicon, germanium or aluminum oxide is formed on the surface of the CMOS circuit substrate (). 1. A microelectromechanical component in which at least one microelectromechanical element , electrical contacting elements and an insulation layer and thereon a sacrificial layer formed with silicon dioxide are formed on a surface of a CMOS circuit substrate and the microelectromechanical element is arranged freely movably in at least one degree of freedom , and the at least on micromechanical element is moveable because of a local defined removal of the sacrificial layer ,wherein at the outer edge of the microelectromechanical component, extending radially around all the elements of the CMOS circuit, a gas- and/or fluid-tight closed layer which is resistant to hydrofluoric acid and is formed with silicon, germanium or aluminium oxide is formed on the surface of the CMOS circuit substrate.2. The component as claimed in claim 1 , wherein the fluid-tight closed layer is formed with amorphous silicon.3. The component as claimed in claim 1 , wherein the fluid-tight closed layer is formed with doped amorphous silicon or a chemical compound of silicon and germanium.4. The component as claimed in claim 1 , wherein a barrier layer composed of aluminium oxide is formed at that surface of the component at which the microelectromechanical element is movably arranged.5. The ...

STRUCTURE FOR DEVICE WITH INTEGRATED MICROELECTROMECHANICAL SYSTEMS

A method for manufacturing a structure comprises a) providing a donor substrate comprising front and rear faces; b) providing a support substrate; c) forming an intermediate layer on the front face of the donor substrate or on the support substrate; d) assembling the donor and support substrates with the intermediate layer therebetween; e) thinning the rear face of the donor substrate to form a useful layer of a useful thickness having a first face disposed on the intermediate layer and a second free face; and wherein the donor substrate comprises a buried stop layer and a fine active layer having a first thickness less than the useful thickness, between the front face of the donor substrate and the stop layer; and after step e), removing, in first regions of the structure, a thick active layer delimited by the second free face of the useful layer and the stop layer. 1. A method for manufacturing a structure , comprising:a) providing a donor substrate comprising a front face and a rear face;b) providing a support substrate;c) forming an intermediate layer on the front face of the donor substrate or on the support substrate;d) assembling the donor substrate and the support substrate so as to dispose the intermediate layer between the donor substrate and the support substrate;e) thinning the rear face of the donor substrate so as to form a useful layer of a useful thickness having a first face disposed on the intermediate layer and a second free face; andwherein:the donor substrate comprises a buried stop layer and a fine active layer having a first thickness less than the useful thickness, the fine active layer disposed between the front face of the donor substrate and the stop layer; andafter step e), the method comprises the removal, in first regions of the structure, of a thick active layer delimited by the second free face of the useful layer and the stop layer, the buried stop layer being continuous over the entire extent of the structure.2. The method of claim ...

PLANARIZATION LAYERS OVER SILICON DIES

A microfluidic apparatus may include, in an example, a substrate, at least one silicon die embedded into the substrate, and a planarization layer layered over, at least, a portion of the substrate that interfaces with the silicon die to prevent a fluid from contacting an edge of the silicon die. 1. A microfluidic apparatus , comprising:a substrate;at least one silicon die embedded into the substrate; anda planarization layer layered over, at least, a portion of the substrate that interfaces with the silicon die to prevent a fluid from contacting an edge of the silicon die.2. The microfluidic apparatus of claim 1 , wherein the substrate is epoxy mold compound (EMC).3. The microfluidic apparatus of claim 1 , wherein the planarization layer is SU8.4. The microfluidic apparatus of claim 1 , wherein the planarization layer planarizes a surface created by the embedded silicon die and the substrate.5. The microfluidic apparatus of claim 1 , further comprising a lid placed over the substrate and silicon die to form a microfluidic channel between the lid and a surface created by the substrate and silicon die.6. The microfluidic apparatus of claim 1 , wherein the planarization layer is 2-5 microns thick.7. The microfluidic apparatus of claim 1 , further comprising a redistribution layer wherein the redistribution layer is claim 1 , at least claim 1 , partially covered by the planarization layer.8. A method claim 1 , comprising:embedding at least one silicon die into a substrate;laying down a planarization layer over, at least, a portion of the substrate that interfaces with the silicon die to prevent a fluid from contacting an edge of the silicon die.9. The method of claim 8 , further comprising forming a lid over the embedded silicon dies to form a fluid channel between the lid and the silicone dies.10. The method of claim 9 , further comprising removing a portion of the planarization layer formed over the silicon die to expose the silicon die to the fluid channel.11. The ...

HIGH PERFORMANCE SEALED-GAP CAPACITIVE MICROPHONE

Some preferred embodiments include a microphone system for receiving sound waves, the microphone including a back plate, a radiation plate, first and second electrodes, first and second insulator layers, a power source and a microphone controller. The radiation plate is clamped to the back plate so that there is a hermetically sealed circular gap between the radiation plate and the back plate. The first electrode is fixedly attached to a side of the back plate proximate to the gap. The second electrode is fixedly attached to a side of the radiation plate. The insulator layers are attached to the back plate and/or the radiation plate, on respective gap sides thereof, so that the insulator layers are between the electrodes. The microphone controller is configured to use the power source to drive the microphone at a selected operating point comprising normalized static mechanical force, bias voltage, and relative bias voltage level. A radius and height of the gap, and a thickness of the radiation plate, are determined using the selected operating point so that a sensitivity of the microphone at the selected operating point is an optimum sensitivity for the selected operating point. 2. The microphone system of claim 1 , wherein the gap comprises a hole machined into the substrate claim 1 , and the back plate comprises a portion of the substrate forming a floor of the gap.3. The microphone system of claim 1 ,wherein the first electrode covers at least 80% of the area of the back plate on the side of the back plate proximate to the gap, andwherein the second electrode covers at least 80% of the area of the radiation plate on the side of the radiation plate proximate to the gap.4. The microphone system of claim 1 , wherein the sound waves are human-audible and the gap contains a vacuum.5. The microphone system of claim 1 , wherein the gap radius a claim 1 , the gap height t claim 1 , and the radiation plate thickness tare determined using the operating point so that the ...

VHF ETCH BARRIER FOR SEMICONDUCTOR INTEGRATED MICROSYSTEM

The present disclosure relates to an integrated microsystem with a protection barrier structure, and an associated method. In some embodiments, the integrated microsystem comprises a first die having a plurality of CMOS devices disposed thereon, a second die having a plurality of MEMS devices disposed thereon and a vapor hydrofluoric acid (vHF) etch barrier structure disposed between the first die and the second die. The second die is bonded to the first die at a bond interface region. The vHF etch barrier structure comprises a vHF barrier layer over an upper surface of the first die, and a stress reduction layer arranged between the vHF etch barrier layer and the upper surface of the first die. 1. An integrated microsystem with a protection barrier structure , comprising:a first die having a plurality of CMOS devices disposed thereon;a second die having a plurality of MEMS devices disposed thereon, wherein the second die is bonded to the first die at a bond interface region; anda vapor hydrofluoric acid (vHF) etch barrier structure disposed between the first die and the second die, wherein the vHF etch barrier structure comprises a vHF etch barrier layer over an upper surface of the first die, and a stress reduction layer arranged between the vHF etch barrier layer and the upper surface of the first die.2. The protection barrier structure of claim 1 , wherein the upper surface of the first die comprises a conductive interconnect feature at the bond interface region claim 1 , and further comprising:a conductive bonding element extending between the conductive interconnect feature and a MEMS device on the second die;wherein the stress reduction layer is a conductive material covering the upper surface of the first die at the bond interface region; andwherein the vHF barrier layer extends over portions of the upper surface of the first die without extending over the bond interface region.3. The protection barrier structure of claim 1 , wherein the stress reduction ...

Manufacturing method of sensor device and sensor device

A method for manufacturing a sensor device is provided. The method prevents corrosion of metal electrodes of a sensor due to outside air with high humidity and preventing the occurrence of warpage of the sensor due to resin sealing of the sensor, thereby reducing the influence on sensor characteristics, and provides the sensor device. The method includes arranging a sensor on a substrate, the sensor having a fixed part, a movable part positioned inside the fixed part, a flexible part connecting the fixed part and the movable part, and a plurality of metal electrodes, electrically connecting the plurality of metal electrodes of the sensor and a plurality of terminals of the substrate with bonding wires, and covering portions of the plurality of metal electrodes of the sensor connected to the bonding wires with a resin so that a part of the bonding wires between the plurality of metal electrodes and the plurality of terminals is exposed.

A kind of MEMS device and its manufacturing method and electronic device

本发明提供一种MEMS器件及其制造方法和电子装置，涉及半导体技术领域。所述方法包括：提供第一衬底和第二衬底，形成覆盖第二衬底的正面以及所述凹槽的底部和侧壁的牺牲材料层，并将第一衬底的第一表面和所述第二衬底的正面相键合；对第一衬底进行减薄处理；图案化第一衬底，以形成上电极；去除部分牺牲材料层，使所牺牲材料层的侧壁与上电极的侧壁对齐，并在牺牲材料层暴露的侧壁上形成保护层；对第二衬底的背面进行刻蚀，以形成下电极以及空腔；刻蚀去除部分牺牲材料层，以使上电极悬浮，位于上电极与第二衬底之间剩余的牺牲材料层作为锚点。根据本发明的方法，避免在湿法刻蚀过程对牺牲材料层造成的过蚀刻，提高MEMS器件的良率和性能。

Encapsulants for protecting MEMS devices during post-packaging release etch

The present invention relates to methods to protect a MEMS or microsensor device through one or more release or activation steps in a “package first, release later” manufacturing scheme: This method of fabrication permits wirebonds, other interconnects, packaging materials, lines, bond pads, and other structures on the die to be protected from physical, chemical, or electrical damage during the release etch(es) or other packaging steps. Metallic structures (e.g., gold, aluminum, copper) on the device are also protected from galvanic attack because they are protected from contact with HF or HCL-bearing solutions.

Microphone arrangement with inlet guard

一种麦克风设备包括基底和微机电系统(MEMS)换能器以及设置在基底上的集成电路(IC)。该麦克风设备还包括盖，该盖安装在基底上并覆盖MEMS换能器和IC。MEMS换能器包括附接至基板的表面的振膜以及安装在基板上并与振膜成间隔开的关系的背板。振膜沿着振膜的外围的至少一部分附接至基板的表面。振膜可以包括氮化硅绝缘层和面向背板的导电层的导电层。MEMS换能器可以包括设置在振膜的至少一部分与基板之间的外围支撑结构。振膜可以包括一个或更多个均压孔。

High performance sealed-gap capacitive microphone

Some preferred embodiments include a microphone system for receiving sound waves, the microphone including a back plate, a radiation plate, first and second electrodes, first and second insulator layers, a power source and a microphone controller. The radiation plate is clamped to the back plate so that there is a hermetically sealed circular gap between the radiation plate and the back plate. The first electrode is fixedly attached to a side of the back plate proximate to the gap. The second electrode is fixedly attached to a side of the radiation plate. The insulator layers are attached to the back plate and/or the radiation plate, on respective gap sides thereof, so that the insulator layers are between the electrodes. The microphone controller is configured to use the power source to drive the microphone at a selected operating point comprising normalized static mechanical force, bias voltage, and relative bias voltage level. A radius and height of the gap, and a thickness of the radiation plate, are determined using the selected operating point so that a sensitivity of the microphone at the selected operating point is an optimum sensitivity for the selected operating point.

Sensor package

A sensor package is disclosed. One embodiment provides a sensor device having a carrier, a semiconductor sensor mounted on the carrier and an active surface. Contact elements are electrically connecting the carrier with the semiconductor sensor. A protective layer made of an inorganic material covers at least the active surface and the contact elements.

Method and device for preventing corrosion on sensors

A device for preventing corrosion on sensors and a method of fabricating the same is disclosed, wherein the device comprises an insulation layer (400) and an adhesion layer (200) covering a metallization layer (300) of a silicon sensor with a corrosion resistant layer (100) located over the adhesion layer (200).

Method for manufacturing a MEMS sensor

本发明涉及一种用于制造MEMS传感器的方法，包括步骤：‑提供MEMS结构，具有用于MEMS结构中的空缺部的至少一个入口，‑将MEMS结构施加在载体结构上，使得通过MEMS结构中的空缺部形成载体结构和MEMS结构之间的腔，该腔能够通过至少一个入口加载以介质，‑密封MEMS结构和载体结构之间的中间空间，使得腔除了至少一个入口之外是密封的，并且‑通过至少一个入口使腔和至少一个入口填充以介质。

Semiconductor structure and its manufacturing method

本申请公开了一种半导体结构及其制造方法，该半导体结构包括：半导体衬底；牺牲层，位于半导体衬底上；功能层，位于牺牲层上；焊盘，位于功能层上；保护层，覆盖功能层，保护层包括开口，焊盘经由开口暴露；以及至少一个通孔，贯穿保护层与功能层，至少部分牺牲层经由至少一个通孔暴露。该半导体结构通过将焊盘形成在功能层上，经由保护层的开口暴露，因此在经由通孔去除部分牺牲层后，不需要去除保护层，可以直接在暴露的焊盘上进行后续引线工艺，达到了简化制造工艺步骤的目的、提高了生产效率、减少了制造成本。

Semiconductor device for use in harsh media

A semiconductor device comprising a first and second doped semiconductor layer wherein the first layer is a monosilicon layer and the second layer is a polysilicon layer, an oxide layer covering the first and second layer, and an interconnect which electrically connects the first and second layer comprises a metal alloy which has a first part in contact with the first layer and a second part in contact with the second layer, wherein a part of the metal alloy between the first and the second part crosses over a sidewall of the second layer; at least one electronic component is formed in the first and/or second layer; the semiconductor device moreover comprises a stoichiometric passivation layer which covers the first and second layer and the oxide layer.

MEMS microphone with reduced parasitic capacitance

Sensor with protective layer

센서는 세라믹 재료를 포함하는 센서층; 크롬을 포함하는 접착층으로서 센서층의 액체 대향면의 하나 이상의 부분에 부착된 접착층; 및 중합체를 포함하는 절연체 필름으로서 접착층의 액체 대향면을 덮는 절연체 필름을 포함한다. 절연체 필름은 부식성 유체 및 고온의 유체로부터 센서를 보호하기 위해, 예컨대, 85℃ 내지 100℃의 온수에의 장기간 노출로부터 센서를 보호하기 위해 사용될 수 있다. The sensor includes a sensor layer comprising a ceramic material; An adhesive layer comprising chromium, which is attached to at least one portion of the liquid-facing surface of the sensor layer; And an insulator film covering the liquid-facing surface of the adhesive layer as an insulator film containing a polymer. The insulator film can be used to protect the sensor from corrosive fluids and high temperature fluids, for example, to protect the sensor from prolonged exposure to hot water at 85°C to 100°C.

Cmos based devices for harsh media

A semiconductor device (100) comprising: a first doped semiconductor layer (112), a second doped semiconductor layer (122), an oxide layer (127) covering the first doped semiconductor layer (112) and the second doped semiconductor layer (122), and comprising an interconnect (129); the first doped semiconductor layer (112) is electrically connected with the second doped semiconductor layer (122) by means of the interconnect (129) which crosses over a sidewall of the second doped semiconductor layer; the interconnect comprises a metal filled slit (123) in the oxide layer (127); at least one electronic component (115) is formed in the first and/or second semiconductor layer (112, 122); the semiconductor device moreover comprises a passivation layer (128) which covers the first and second doped semiconductor layers (112, 122) and the oxide layer (127).

Microphone device with ingress protection

A microphone device includes a base and a microelectromechanical system (MEMS) transducer and an integrated circuit (IC) disposed on the base. The microphone device also includes a cover mounted on the base and covering the MEMS transducer and the IC. The MEMS transducer includes a diaphragm attached to a surface of the substrate and a back plate mounted on the substrate and in a spaced apart relationship with the diaphragm. The diaphragm is attached to the surface of the substrate along at least a portion of a periphery of the diaphragm. The diaphragm can include a silicon nitride insulating layer, and a conductive layer, that faces a conductive layer of the back plate. The MEMS transducer can include a peripheral support structure that is disposed between at least a portion of the diaphragm and the substrate. The diaphragm can include one or more pressure equalizing apertures.

Release chemical protection for integrated complementary metal-oxide-semiconductor (cmos) and micro-electro-mechanical (mems) devices

Systems and methods that protect CMOS layers from exposure to a release chemical are provided. The release chemical is utilized to release a micro-electromechanical (MEMS) device integrated with the CMOS wafer. Sidewalls of passivation openings created in a complementary metal-oxide-semiconductor (CMOS) wafer expose a dielectric layer of the CMOS wafer that can be damaged on contact with the release chemical. In one aspect, to protect the CMOS wafer and prevent exposure of the dielectric layer, the sidewalls of the passivation openings can be covered with a metal barrier layer that is resistant to the release chemical. Additionally or optionally, an insulating barrier layer can be deposited on the surface of the CMOS wafer to protect a passivation layer from exposure to the release chemical.

Actuator layer patterning with polysilicon and etch stop layer

一種方法包括在裝置晶圓的第一側上面形成蝕刻停止層。該方法也包括在該蝕刻停止層上面形成多晶矽層。處理晶圓與該裝置晶圓的第一側熔融接合。在該裝置晶圓的第二側上形成共晶接合層。在該裝置晶圓的第二側蝕刻微電子機械系統(MEMS)特徵，以暴露該蝕刻停止層。經暴露的蝕刻停止層被移除以暴露該多晶矽層。經暴露的多晶矽層被移除以暴露在該處理晶圓及該裝置晶圓之間形成的凹部。

Micro-electro-mechanical system device and forming method thereof

本公开实施例涉及一种微机电系统装置及其形成方法，所述方法包括在第一压电层之上沉积第一电极层。接着在第一电极层之上沉积硬掩模层。在硬掩模层上形成具有第一电极图案的光刻胶掩模。使用光刻胶掩模向硬掩模层中进行第一刻蚀，以将第一电极图案转移到硬掩模层。接着移除光刻胶掩模。使用硬掩模层进行第二刻蚀，以将第一电极图案转移到第一电极层，以及移除硬掩模层。

A method of manufacturing an apparatus to receive a fluid, in particular a fluid having corrosive attributes

態樣係針對用以在一基材上製造一微流體裝置之技術。於一特定實例中，一種製造一微流體裝置之方法包含在一基材上增長一熱氧化物層以及在該熱氧化物層上沉積一介電層，該介電層包含摻雜式介電膜。其次，藉著形成介電層之部分之一介電壁面而界定之一開口係藉由選擇地移除介電膜而形成在該介電層內。最後，開口係以一密封膜密封以防止介電膜曝露至該開口中包含之一流體。密封膜可為抵抗開口中包含之流體之腐蝕屬性之一電氣式絕緣材料所製成。

Microphone device with ingress protection

A microphone device includes a base and a microelectromechanical system (MEMS) transducer and an integrated circuit (IC) disposed on the base. The microphone device also includes a cover mounted on the base and covering the MEMS transducer and the IC. The MEMS transducer includes a diaphragm attached to a surface of the substrate and a back plate mounted on the substrate and in a spaced apart relationship with the diaphragm. The diaphragm is attached to the surface of the substrate along at least a portion of a periphery of the diaphragm. The diaphragm can include a silicon nitride insulating layer, and a conductive layer, that faces a conductive layer of the back plate. The MEMS transducer can include a peripheral support structure that is disposed between at least a portion of the diaphragm and the substrate. The diaphragm can include one or more pressure equalizing apertures.

Circuit equipment

CMOS-MEMS integrated device with selective bond pad protection

揭露一種用來製備半導體晶圓的方法和系統。在第一態樣中，該方法包含：在該半導體晶圓上的圖案化頂部金屬上方設置鈍化層；使用第一掩膜蝕刻該鈍化層，以在該半導體晶圓中開啟接合墊；在該半導體晶圓上沉積保護層；使用第二掩膜圖案化該保護層；以及使用第三掩膜蝕刻該鈍化層，以在該半導體晶圓中開啟其它電極。該系統包含MEMS裝置，其還包含第一基板和接合至該第一基板的第二基板，其中，該第二基板是由該方法的前述步驟所製備。

Wafer-level package with enhanced performance

The present disclosure relates to a wafer-level package that includes a first thinned die (12), a multilayer redistribution structure (18), a first mold compound (20), and a second mold compound (22). The first thinned die includes a first device layer (24) formed from glass materials. The multilayer redistribution structure includes redistribution interconnects that connect the first device layer to package contacts (44) on a bottom surface of the multilayer redistribution structure. Herein, the connections between the redistribution interconnects and the first device layer are solder-free. The first mold compound resides over the multilayer redistribution structure and around the first thinned die, and extends beyond a top surface of the first thinned die to define an opening within the first mold compound and over the first thinned die. The second mold compound fills the opening and is in contact with the top surface of the first thinned die.

Microphone device with ingress protection

A microphone device includes a base and a microelectromechanical system (MEMS) transducer and an integrated circuit (IC) disposed on the base. The microphone device also includes a cover mounted on the base and covering the MEMS transducer and the IC. The MEMS transducer includes a diaphragm attached to a surface of the substrate and a back plate mounted on the substrate and in a spaced apart relationship with the diaphragm. The diaphragm is attached to the surface of the substrate along at least a portion of a periphery of the diaphragm. The diaphragm can include a silicon nitride insulating layer, and a conductive layer, that faces a conductive layer of the back plate. The MEMS transducer can include a peripheral support structure that is disposed between at least a portion of the diaphragm and the substrate. The diaphragm can include one or more pressure equalizing apertures.

CMOS-based devices for harsh media

本申请公开了用于苛刻介质的基于CMOS的器件。一种半导体器件(100)，包括：第一掺杂半导体层(112)、第二掺杂半导体层(122)、氧化物层(127)，并且包括互连(129)，该氧化物层(127)覆盖第一掺杂半导体层(112)和第二掺杂半导体层(122)；第一掺杂半导体层借助互连(129)与第二掺杂半导体层(122)电连接，该互连(129)跨越第二掺杂半导体层(122)的侧壁(133)；互连包括所述氧化物层(127)中的金属填充的狭缝(123)；至少一个电子组件(115)，被形成在第一半导体层(112)和/或第二半导体层(122)中；该半导体器件还包括钝化层(128)，该钝化层(128)覆盖第一掺杂半导体层(112)、第二掺杂半导体层(122)和氧化物层(127)。

CMOS-MEMS integrated device with selective bond pad protection

A method and system for preparing a semiconductor wafer are disclosed. In a first aspect, the method comprises providing a passivation layer over a patterned top metal on the semiconductor wafer, etching the passivation layer to open a bond pad in the semiconductor wafer using a first mask, depositing a protection layer on the semiconductor wafer, patterning the protective layer using a second mask, and etching the passivation layer to open other electrodes in the semiconductor wafer using a third mask. The system comprises a MEMS device that further comprises a first substrate and a second substrate bonded to the first substrate, wherein the second substrate is prepared by the aforementioned steps of the method.

Method for protecting bond pads from corrosion and corresponding device

The method includes providing a wafer having a plurality of circuits, each of the plurality of circuits having a plurality of bond pads including a first metal; applying a coating (170) onto at least the plurality of bond pads (160); etching a hole (172) in the coating (170) on each of the plurality of bond pads (160) to provide an exposed portion of the plurality of bond pads (160); dicing the wafer to separate each of the plurality of circuits; die bonding each of the plurality of circuits to a respective packaging substrate; and performing a bonding process to bond a second, dissimilar metal (150) to the exposed portion of each of the plurality of bond pads (160) such that the second, dissimilar metal (150) encloses the hole (172) in the coating (170) of each of the plurality of bond pads (160), thereby enclosing the exposed portion.

Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren

Die Erfindung schafft ein mikromechanisches Bauelement und ein entsprechendes Herstellungsverfahren. Das mikromechanische Bauelement ist ausgestattet mit einem Substrat (1), einem auf dem Substrat (1) angebrachten Funktionschip (2) mit einer dem Substrat (1) abgewandten Hauptoberfläche (2a), wobei auf der Hauptoberfläche (2a) ein oder mehrere Bondpads (30) vorgesehen sind, die über einen jeweiligen Bonddraht (3) auf das Substrat (1) gebondet sind, wobei auf der Hauptoberfläche (2a) oder oberhalb der Hauptoberfläche (2a) des Funktionschips (2) ein Abdeckchip (15a; 15b; 15c; 15d; 15e) als Diffusionsbarriere zur einer Moldverpackung (4) angebracht ist, welcher aus einem Chipmaterial gebildet ist, das diffusionshemmend auf in der Moldmasse (4) befindliche Halogenionen wirkt, wobei der Abdeckchip (15a; 15b; 15c; 15d; 15e) die Hauptoberfläche (2a) im Wesentlichen vollständig überdeckt; und der Moldverpackung (4), in welcher der Funktionschip (2) zusammen mit dem Abdeckchip (15a; 15b; 15c; 15d; 15e) verpackt ist.

红外mems桥梁柱结构及工艺方法

本发明公开了一种红外MEMS桥梁柱结构及形成方法，所述结构采用多层薄膜复合结构，包括第一释放保护层、金属介质层以及第二释放保护层；所述第一释放保护层为氧化硅层；所述第二释放保护层为四层结构，从下至上依次为氮氧化硅与氧化硅的混合层、氧化硅层、氮氧化硅层、氧化硅层；所述金属介质层包括三层结构，从下至上依次是Ti、TiN以及Ti层。本发明在淀积金属介质层时将薄膜层追加一层金属Ti层，在刻蚀DARC时，金属Ti层可以有效的阻挡刻蚀去胶时氧离子的轰击导致TiN层被氧化，后续湿法刻蚀更容易去除干净，防止残留。

Adhesive silicon oxynitride film

The invention relates generally to use of a silicon oxynitride film which exhibits desirable physical and chemical properties; superiority in adhesion to metals including noble metals and other metals, transparent conductive oxides, and semiconductor materials compared to silicon dioxide and silicon nitride; is wet-etchable, dry-etchable, or both; and operates as a high-performance overcoat barrier dielectric. The silicon oxynitride film meets performance requirements via a process that does not require an adhesion layer for deposition, and does not contaminate, obscure, or damage the device through incorporation or processing of additional adhesion layers.

Method to protect electrodes from oxidation in a mems device

In some embodiments, the present disclosure relates to a piezomicroelectromechanical system (piezoMEMS) device that includes a second piezoelectric layer arranged over the first electrode layer. A second electrode layer is arranged over the second piezoelectric layer. A first contact is arranged over and extends through the second electrode layer and the second piezoelectric layer to contact the first electrode layer. A dielectric liner layer is arranged directly between the first contact and inner sidewalls of the second electrode layer and the second piezoelectric layer. A second contact is arranged over and electrically coupled to the second electrode layer, wherein the second contact is electrically isolated from the first contact.

Pizoelectric MEMS device with electrodes having low surface roughness

In some embodiments, the present disclosure relates to a piezomicroelectromechanical system (piezoMEMS) device that includes a second piezoelectric layer arranged over the first electrode layer. A second electrode layer is arranged over the second piezoelectric layer. A first contact is arranged over and extends through the second electrode layer and the second piezoelectric layer to contact the first electrode layer. A dielectric liner layer is arranged directly between the first contact and inner sidewalls of the second electrode layer and the second piezoelectric layer. A second contact is arranged over and electrically coupled to the second electrode layer, wherein the second contact is electrically isolated from the first contact.

Microelectronic device having protected connections and manufacturing process thereof

A microelectronic device includes a chip housing a functional part and carrying first electrical contact regions in electrical connection with the functional part through first protected connections extending over or in the chip. A substrate has a first contact area and a second contact area, which is remote from the first contact area. The first contact area carries second electrical contact regions, and the second contact area carries external connection regions. The second contact regions and the external connection regions are in mutual electrical connection through second protected connections extending over or in the substrate. A protection-ring structure surrounds the first and second electrical contact regions and delimits a first chamber closed with respect to the outside. The first electrical contact regions and the second electrical contact regions are in mutual electrical contact.

具有受保护的连接件的微电子设备及其制造工艺

本公开的实施例涉及具有受保护的连接件的微电子设备及其制造工艺。微电子设备包括芯片，芯片容纳功能部分并且承载第一电接触区域，第一电接触区域与功能部分通过第一受保护的连接件电连接，第一受保护的连接件在芯片之上或者在芯片中延伸。基板具有第一接触区和第二接触区，第二接触区远离第一接触区。第一接触区承载第二电接触区域，并且第二接触区承载外部连接区域。第二接触区域和外部连接区域通过第二受保护的连接件相互电连接，第二受保护的连接件在基板之上或者在基板中延伸。保护环结构围绕第一电接触区域和第二电接触区域，并且界定相对于外部封闭的第一腔室。第一电接触区域和第二电接触区域相互电接触。

Halbleitersensorbauelement und Verfahren zum Herstellen desselben

Halbleitersensorbauelement (100), aufweisend:ein Substrat (110) aufweisend eine erste Hauptfläche (112) und eine zweite Hauptfläche (114) gegenüber der ersten Hauptfläche,ein Halbleiterelement (120) aufweisend einen Erfassungsbereich (122), wobei das Halbleiterelement (120) auf der ersten Hauptfläche (112) des Substrats (110) angeordnet und elektrisch an das Substrat (110) gekoppelt ist,einen Deckel (130), der auf der ersten Hauptfläche (112) des Substrats (110) angeordnet ist und einen Hohlraum (160) ausbildet, wobei das Halbleiterelement (120) in dem Hohlraum (160) angeordnet ist,eine aufgedampfte dielektrische Beschichtung (140), die das Halbleiterelement (120) und die erste Hauptfläche (112) des Substrats (110) bedeckt, wobei die aufgedampfte dielektrische Beschichtung (140) eine Öffnung (142) über dem Erfassungsbereich (122) besitzt,wobei die zweite Hauptfläche (114) des Substrats (110) von der aufgedampften dielektrischen Schicht (140) mindestens teilweise frei ist, undein Glob Top (170), über dem Erfassungsbereich (122) angeordnet, wobei das Glob Top (170) von der aufgedampften dielektrischen Beschichtung (140) an der Öffnung (142) mindestens teilweise exponiert ist.

微機械構件和相應的生產方法

本發明提供一種微機械構件及一種相應的生產方法。該微機械構件裝備有：基板（1）；功能晶片（2），其施加於該基板（1）上，其中主表面（2a）具有背對該基板（1）之；一或多個結合襯墊（30），其藉助於各別結合線（3）結合至該基板（1）上，該一或多個結合襯墊設置於該主表面（2a）上；覆蓋晶片（15a；15b；15c；15d；15e），其由對含於模具組成物（4）中之鹵素離子具有擴散抑制效應的晶片材料形成，該覆蓋晶片係作為針對於模具封裝（4）之擴散障壁而施加於該功能晶片（2）之該主表面（2a）上或該主表面（2a）上方，該覆蓋晶片（15a；15b；15c；15d；15e）實質上完全覆蓋該主表面（2a）；及該模具封裝（4），該功能晶片（2）與該覆蓋晶片（15a；15b；15c；15d；15e）一起封裝於該模具封裝中。

在前端中在晶片级沉积保护材料以进行早期颗粒和水分保护

提供了一种半导体器件以及制造该半导体器件的方法，使得微机电系统(MEMS)元件在早期制造阶段受到保护。一种用于保护MEMS元件的方法包括：在衬底上提供具有敏感区的至少一个MEMS元件；以及在封装体组装工艺之前，在所述至少一个MEMS元件的所述敏感区之上沉积保护材料，使得所述至少一个MEMS元件的所述敏感区被密封而与外部环境隔开，其中所述保护材料允许所述至少一个MEMS元件的传感器功能。

用于全封闭的asic和导线的麦克风封装件

一种麦克风装置包括具有腔体的基板。所述装置还包括安装在基板上的腔体外部的微机电系统(MEMS)换能器以及安装在所述腔体中的专用集成电路。第一组焊接线将MEMS换能器连接至ASIC，第二组焊接线将ASIC连接至腔体内的导线。封装材料完全覆盖ASIC和第二组导线的至少一部分，并且基本上被限制在腔体内。在基板上方安装有盖以覆盖MEMS换能器、封装材料、ASIC、第一组焊接线以及第二组焊接线。

用于制造微机电传感器的方法和微机电传感器

本发明提出一种用于制造微机电传感器(1)的方法，其中，微机电传感器(1)通过罩晶片(2)与传感器晶片(3)的连接制造，其中，罩晶片(2)具有用于使罩晶片(2)与传感器晶片(3)连接的键合结构(4)，其中，传感器晶片(3)具有传感器芯(5)，该传感器芯具有可运动结构(6)，并且罩晶片(2)具有用于限界可运动结构(6)的偏移的止挡结构(7)，其中，方法具有第一步骤和在第一步骤之后进行的第二步骤，其中，止挡结构(7)的止挡面位于未加工的罩晶片的初始面的水平上。

マイクロ流体センサ

マイクロ流体センサは、第１の基板と、第２の基板と、第１の基板と第２の基板との間に形成されたキャビティであり、キャビティが、貯水部分と、貯水部分から延在する流路部分とを含むキャビティと、第１の基板と第２の基板との間に配置された容量性素子であり、容量性素子がキャビティの流路部分に少なくとも部分的に配置される容量性素子と、貯水部分に設けられた誘電性検出液体とを備える。貯水部分に隣り合った第１の基板に対する力の印加時に、貯水部分は、流路部分内で容量性素子の容量を変化させるように、流路部分に沿って検出液体を変形および変位するように構成される。【選択図】 図１

マイクロエレクトロメカニカルセンサを製造する方法およびマイクロエレクトロメカニカルセンサ

MEMS device and method for making the same

A microelectromechanical system device includes a substrate, a dielectric layer, an electrode, a surface modification layer and a membrane. The dielectric layer is formed on the substrate, and is formed with a cavity that is defined by a cavity-defining wall. The electrode is formed in the dielectric layer. The surface modification layer covers the cavity-defining wall, and has a plurality of hydrophobic end groups. The membrane is connected to the dielectric layer, and seals the cavity. The membrane is movable toward or away from the electrode. A method for making a microelectromechanical system device is also provided.

微机电系统（mems）元件的用于改善可靠性的介电包覆

本申请涉及微机电系统(MEMS)元件的用于改善可靠性的介电包覆。在所描述的示例中，一种形成微机电器件的方法包括：在衬底上形成(102)包括导电层的第一金属层；在第一金属层上形成(104)第一介电层，其中第一介电层包括一个或多个单独的介电层；在第一介电层上形成(106)牺牲层；在牺牲层上形成(108)第二介电层；在第二介电层上形成(110)第二金属层；以及移除(112)牺牲层以便在第二介电层与第一介电层之间形成间隔。移除牺牲层使得第二介电层能够在至少一个方向上相对于第一介电层移动。

用于制造微机电构件的方法和晶片组件

本发明涉及一种用于制造微机电构件的方法。所述方法具有以下步骤：提供具有多个微机电基本元件(110a)的第一晶片；在所述微机电基本元件(110a)上或处以晶片级构造相应的容器结构(112a)；和将油(40)或凝胶布置在所述容器结构(112a)内部。

用于制造微机电传感器的方法和微机电传感器

本发明提出一种用于制造微机电传感器(1)的方法，其中，微机电传感器(1)通过罩晶片(2)与传感器晶片(3)的连接制造，其中，罩晶片(2)具有用于使罩晶片(2)与传感器晶片(3)连接的键合结构(4)，其中，传感器晶片(3)具有传感器芯(5)，该传感器芯具有可运动结构(6)，并且罩晶片(2)具有用于限界可运动结构(6)的偏移的止挡结构(7)，其中，方法具有第一步骤和在第一步骤之后进行的第二步骤，其中，止挡结构(7)的止挡面位于未加工的罩晶片的初始面的水平上。

致動器層圖案化的方法和裝置

一種方法包括在裝置晶圓的第一側上面形成蝕刻停止層。該方法也包括在該蝕刻停止層上面形成多晶矽層。處理晶圓與該裝置晶圓的第一側熔融接合。在該裝置晶圓的第二側上形成共晶接合層。在該裝置晶圓的第二側蝕刻微電子機械系統(MEMS)特徵，以暴露該蝕刻停止層。經暴露的蝕刻停止層被移除以暴露該多晶矽層。經暴露的多晶矽層被移除以暴露在該處理晶圓及該裝置晶圓之間形成的凹部。

Hydrogen barriers in a copper interconnect process

A microelectronic system including hydrogen barriers and copper pillars for wafer level packaging and method of fabricating the same are provided. Generally, the method includes: forming an insulating hydrogen barrier over a surface of a first substrate; exposing at least a portion of an electrical contact to a component in the first substrate by removing a portion of the insulating hydrogen barrier, the component including a material susceptible to degradation by hydrogen; forming a conducting hydrogen barrier over at least the exposed portion of the electrical contact; and forming a copper pillar over the conducting hydrogen barrier. In one embodiment, the material susceptible to degradation is lead zirconate titanate (PZT) and the microelectronic systems device is a ferroelectric random access memory including a ferroelectric capacitor with a PZT ferroelectric layer. Other embodiments are also disclosed.

Semiconductor device for use in harsh media

Plasma shielding for an electrostatic mems device

A micro-electromechanical system, MEMS, device configured to actuate a first part relative to a second part, the MEMS device comprising: a first electrode and a second electrode configured such that, in use, application of a voltage to the first electrode and the second electrode would cause a force to be applied to the first part relative to the second part; and a first baffle configured to prevent ingress of a fluid or transmission of radiation from an environment outside of the MEMS device into a space occupied by the first electrode and the second electrode.

Wearable device with combined sensing capabilities

The present invention discloses a wearable device with combined sensing capabilities, which includes a wearable assembly and at least one multi-function sensor module. The wearable assembly is suitable to be worn on apart of a user's body. The wearable assembly includes at least one light-transmissible window. The multi-function sensor module is located inside the wearable assembly, for performing an image sensing function and an infrared temperature sensing function. The multi-function sensor module includes an image sensor module for sensing a physical or a biological feature of an object through the light-transmissible window by way of image sensing; and an infrared temperature sensor module for sensing temperature through the light-transmissible window by way of infrared temperature sensing.

微机电系统装置及其形成方法

本公开实施例涉及一种微机电系统装置及其形成方法，所述方法包括在第一压电层之上沉积第一电极层。接着在第一电极层之上沉积硬掩模层。在硬掩模层上形成具有第一电极图案的光刻胶掩模。使用光刻胶掩模向硬掩模层中进行第一刻蚀，以将第一电极图案转移到硬掩模层。接着移除光刻胶掩模。使用硬掩模层进行第二刻蚀，以将第一电极图案转移到第一电极层，以及移除硬掩模层。

Corrosion tolerant micro-electromechanical fluid ejection device

Aspects of the present disclosure are directed to an apparatus including a circuit region and a fluidic region. In a particular example, the circuit region with logical circuits thereon, includes a thermal oxide layer on a silicon substrate, and a dielectric layer over the field oxide layer, the dielectric layer including a doped dielectric film. The microfluidic device further includes a fluidic region including fluid ports formed through a surface of the apparatus and including an un-doped dielectric film. The fluidic region includes an aperture in the dielectric layer, where the aperture is defined by a dielectric wall which forms part of the dielectric layer. A sealing film deposited over the dielectric wall may prevent the doped dielectric film from contacting fluid contained in the fluid port.

マイクロエレクトロメカニカルセンサを製造する方法およびマイクロエレクトロメカニカルセンサ

マイクロエレクトロメカニカルセンサ（１）を製造する方法が提案される。マイクロエレクトロメカニカルセンサ（１）がキャップウェハ（２）とセンサウェハ（３）と結合することによって製造され、キャップウェハ（２）がキャップウェハ（２）をセンサウェハ（３）に結合するためのボンディング構造体（４）を有し、センサウェハ（３）が可動式構造（６）を有するセンサコア（５）を含み、キャップウェハ（２）が可動式構造（６）の変位を制限するためのストッパ構造体（７）を含み、当該方法が、第１のステップと、第１のステップに続く第２のステップとを備え、ストッパ構造体（７）のストッパ表面が未加工のキャップウェハの元の表面のレベルに位置する。

在前端中在晶片级沉积保护材料以进行早期颗粒和水分保护

提供了一种半导体器件以及制造该半导体器件的方法，使得微机电系统(MEMS)元件在早期制造阶段受到保护。一种用于保护MEMS元件的方法包括：在衬底上提供具有敏感区的至少一个MEMS元件；以及在封装体组装工艺之前，在所述至少一个MEMS元件的所述敏感区之上沉积保护材料，使得所述至少一个MEMS元件的所述敏感区被密封而与外部环境隔开，其中所述保护材料允许所述至少一个MEMS元件的传感器功能。