Method and system for controlling refresh in volatile memories
A memory system for controlling memory refresh is provided. An embodiment of the memory system includes a memory configured to operate in a self-refresh mode and an auto-refresh mode, the memory having a plurality of memory locations, and a memory controller configured to access a first one of the memory locations while a second one of the memory locations is being refreshed in the auto-refresh mode. Another embodiment of the memory system includes a memory that can communicate its self refresh address to the memory controller A further embodiment includes a memory controller that can communicate an auto-refresh address to a memory. 1. A memory system, comprising: A memory, is configured to be in a self-refresh mode and an auto-refresh mode of operation, the memory having a plurality of storage positions; and A memory controller, is configured to be in the auto-refresh mode of the memory locations in the 2nd is a refresh access the memory location at the same time one of the 1st, Wherein the memory includes a plurality of storage library, the storage position of the 1st gear in the storage library in a 1st, and the storage position of the 2nd gear in the storage library in a 2nd, Wherein the memory further comprises a refresh address register, it is disposed in order to be in the self-refresh mode sequentially through a plurality of memory address, the memory address corresponding to each of the to be in the self-refresh mode, the refreshing of one of the storage position, and wherein said memory controller to the read address register access, Wherein the memory further comprises a coupled to the refresh-address register readable register, the memory controller through the-readable register to the read address register access. 2. Memory system according to Claim 1, wherein the readable register includes a mode register. 3. Memory system according to Claim 1, wherein the memory is further configured to be in the auto-refresh mode of operation using the read address of the address in the register. 4. Memory system according to Claim 3, wherein the memory controller is further configured to lower in the auto-refresh mode to an auto-refresh order to offer to the memory, and the memory is further configured to, in response to the auto-refresh order is changed in the read address register of the address. 5. Memory system according to Claim 1, wherein the memory controller further comprises a register, it is disposed in order to change from the self-refresh mode is the auto-refresh mode from the refresh-address register included in the address. 6. Memory system according to Claim 5, wherein the memory controller is further configured to the register in the auto-refresh mode sequentially through a plurality of address, and the use of the memory controller to the address in the register in the auto-refresh mode, refresh the memory. 7. Memory system according to Claim 6, wherein the memory controller is further configured to change from the auto-refresh mode to the self-refresh mode of the memory controller in the register of the address provided to the memory. 8. Memory system according to Claim 7, wherein the memory is further configured to be received from the memory controller included in the address in the refresh address register. 9. A refresh is provided with a self-refresh mode and an auto-refresh mode of the method of memory, the memory having a plurality of storage positions, said method comprising: To provide a memory controller when the memory in the auto-refresh mode of operation in the storage position in the 2nd being refreshed at the same time, in the memory in the memory location of a 1st to the access, wherein the memory includes a plurality of storage library, the storage position of the 1st gear in the storage library in a 1st, and the storage position of the 2nd gear in the storage library in a 2nd, wherein the memory further comprises a refresh address register, it is disposed in order to be in the self-refresh mode sequentially through a plurality of memory address, the memory address corresponding to each of the to be in the self-refresh mode, the refreshing of one of the storage position; and To the memory controller provides the refresh address to the address in the register access, wherein the refresh-address register of the address is loaded into the in the memory in a readable register, and the address is read from the readable register in to the memory controller, the memory controller to provide access to the address. 10. Method according to Claim 9, wherein the readable register includes a mode register. 11. Method according to Claim 9, wherein the read address register is further configured in the auto-refresh mode sequentially through a plurality of memory address, the method further includes when the the auto-refresh mode of operation using the read address register to the address in the refresh of the corresponding memory location. 12. Method according to Claim 11, further comprising: when in the auto-refresh mode of operation will be an auto-refresh order to provide from the memory controller to the memory; and in response to the auto-refresh command and change the read address of the address in the register. 13. Method according to Claim 9, further comprising in the auto-refresh mode will be at the beginning of the address from the read address register loaded into the memory in a register in the controller. 14. Method according to Claim 13, wherein the memory controller is further configured to the register in the auto-refresh mode sequentially through a plurality of memory address, the method further includes when the the auto-refresh mode of operation using the memory controller in the address of the register to refresh the corresponding storage position. 15. Method according to Claim 14, further comprising the memory from the auto-refresh mode is changed into the self-refresh mode, and the period of the transition of the memory controller in the register of the address provided to the memory. 16. Method according to Claim 15, further comprising the memory from the memory controller included in said received address in the refresh address register. 17. A is configured in a self-refresh mode and an auto-refresh mode of the memory operation, which comprises: a plurality of storage library, it is disposed so that in the auto-refresh mode an external device in the storage library in a 2nd one or more than one storage location at the same time positive refresh access the storage library are a 1st; A refresh address register, it is disposed in order to be in the self-refresh mode sequentially through a plurality of memory address, the memory address corresponding to each of the to be in the self-refresh mode, refresh of the memory location of a person, the refresh-address register by the external device access; and A readable register, the refresh-address register by the external device through the-readable register access. 18. Memory according to Claim 17, wherein the readable register includes a mode register. 19. Memory according to Claim 17, further comprising a strobe generator, through the gating produces the configuration that is necessary to refresh each of the memory position a in generating a strobe, the strobe generator in rollable band During the new mode of internal control, the memory is further configured to provide the auto-refresh mode to the external control of the strobe generator. 20. Memory according to Claim 17, it further includes a refresh strobe generator, the refresh strobe generated to the heating during the self-refresh mode to be refreshed in the memory location of each of the generating a refresh strobe, the memory is further configured to during the auto-refresh mode to be refreshed in the memory location of each of the external device from receiving a refresh strobe. 21. Memory according to Claim 17, wherein the memory is further configured to during in the auto-refresh mode from the external device receives a memory address sequence, the received memory address for each of the refresh the storage position in the storage position of a corresponding. 22. Memory according to Claim 17, wherein the read address register is loaded from the external device. 23. A is configured in an auto-refresh mode and a self-refresh mode control with a plurality of memory banks of the memory of the memory controller, the memory controller comprises: An address queue, it is disposed in order to store that are used to access the memory address to the memory; Refresh address logic, it is disposed in order to from the address row receive a team for the storage library in the memory address of the 1st, and from a refresh-address register receives a to the 2nd in a storage library of a refresh address, the refresh address logic in the further configured to the 1st in a storage library are different from the storage library when the 2nd in the auto-refresh mode of the queue from the address of the memory address provided to the memory, wherein the read address in the auto-refresh mode in a internal under control; and A storage register, the storage register in a from the self-refresh mode to the auto-refresh mode in a during a transition period from the memory refresh address to load and a from the auto-refresh mode to the self-refresh mode to the memory, during a transition period of the refresh address. 24. The memory controller according to Claim 23, it further includes a refresh strobe generator, the refresh strobe generating through the configured to generate a refresh strobe, the refresh strobe during the auto-refresh mode is provided to the memory, and is used for the auto-refresh mode in memory register during the change of the refresh address. 25. A is configured in an auto-refresh mode and a self-refresh mode control with a plurality of memory banks of the memory of the memory controller, the memory controller comprises: An address queue, it is disposed in order to store that are used to access the memory address to the memory; Refresh address logic, it is disposed in order to from the address row receive a team for the storage library in the memory address of the 1st, and from a refresh-address register receives a to the 2nd in a storage library of a refresh address, the refresh address logic in the further configured to the 1st in a storage library are different from the storage library when the 2nd in the auto-refresh mode of the queue from the address of the memory address provided to the memory, wherein the read address during the auto-refresh mode is controlled by an external source; and A storage register, the storage register in a from the self-refresh mode to the auto-refresh mode in a during a transition period from the memory refresh address to load and a from the auto-refresh mode to the self-refresh mode to the memory, during a transition period of the refresh address. 26. The memory controller according to Claim 25, it further includes a refresh strobe generator, the brush Newly selected through a controller configured to generate a refresh strobe, the refresh strobe during the auto-refresh mode is provided to the memory, and is used for the auto-refresh mode in memory register during the change of the refresh address.