MACHINE OF VACUUM DEPOSIT, ON A SUBSTRATE, MATERIALS IN THIN LAYERS, BY CATHODE SPUTTERING.

The present invention relates to a machine for depositing, vacuum, materials in thin layers to a substrate.

The thin film deposition technology is used in many industries, mainly uses with two large.

The first is the understanding that is deposited on a substrate generally translucent at least one thin layer (with a thickness of between a few tens of nanometers to several microns) of material to provide surface finishes such as anti-reflective, optical filters, anti-scratch coating, metal layer or a semi-metallic. The substrate is in this case glass or transparent organic material. Substrates so treated are characterized by a large thickness (of the order of a few mm), modest dimensions (of the order of a few cm, to the m) and discontinuous parts. The materials deposited may be metals or dielectrics.

The second is the microelectronic wherein depositing thin layers of materials substantially metallic is applied to the production of filters anti-electromagnetic radiation. The substrate is in this case a very thin film of organic material braided or non-braided flexible, paper, synthetic fabric or plastic film. Substrates so treated are characterized by low thicknesses (of the order of a few 10^emes of mm) and continuous film to a presentation of the greatest possible dimensions (of the order of several tens or hundreds of m).

In the field of thin film deposition, the sputtering method (sputtering English) is known and most prevalent. The principle of the method is to provide a molecular tearing metal particles or dielectric from a target made of a material, vacuum and gas plasma, to project said material to a substrate, which deposits.

The sputtering method is based on the use of an anode and a cathode between which is applied a potential difference. The substrate is disposed between the anode and the cathode. The material to be deposited is placed, in the shape of a target disposed at and associated with the cathode. The application of said potential difference, in an enclosure under a high vacuum, creates a plasma, gradually disintegrates said target and projects the derived material towards the anode. During this projection said material meets the substrate at the surface of which it is encased and performs deposition.

A version of the sputtering method increased by at least one magnetron, for increasing the coating amount of (magnetron sputtering English), is also known.

Also, it is known the use of magnetrons to increase the efficiency of the ion etching (etching and English).

The size of the sputtering chambers is up to date Guests for reasons related to the principle. An increase in size requires removal of the anode and the cathode, to introduce the substrate into the gap. This is accompanied by a unavoidable dispersion of the projection beam which does not permit ensure good uniformity of the sputtered layer. In practice, for a distance greater than 170 mm anode/cathode, it is no longer possible to realize uniform and dense layers.

Among the deposit machines, vacuum, existing of thin layers, include laboratory machines generally having a single chamber size processing reduced, thereby limiting the maximum size of the processed substrates, that the attainable production rate.

Also provided machines comprising more successive modules each dedicated to a material. A pollution by a deposition material or a reactive gas is detrimental to the quality of the deposit obtained. Also, so as not to mix the environment within the successive modules, these machines are generally equipped with sealed lock between the modules. These lock, produced by gate valves, are generally closed and are opened only for passage to the substrates from one module to the other, between two deposition steps. Such function step-by-step or periodically, batch-processes the substrates each step/period and does not allow processing substrates continuous-type film.

The present invention overcomes these various disadvantages by for treating larger pieces, continuous or discontinuous, with high productivity.

The features of the invention can provide useful modules functional sputtering cathode/anode with a distance of the order of 400 mm.

Furthermore, it is possible to design the modules double spray cathode/anode with a distance of the order of 2x400 mm.

The invention relates to a machine vacuum deposition, on a substrate, a thin-layered material by sputtering, comprising a transport path and guide for carrying the substrate to the transit from a module insertion gate of the blank substrate, to a lock module extraction of the treated substrate, while successively passing through and in the order of at least one module of preparing the substrate, and at least one sputtering module, all modules having an atmosphere individually pressure-controlled, temperature, and reactive gas partial pressure, a transfer chamber having a controlled atmosphere low limit pressure, temperature, and reactive gas partial pressure, bringing together all modules so that the substrate passes through the transfer chamber to each modulus change.

According to another feature of the invention, the machine further comprises a rolling device the vacuum on each transition between a module and the transfer chamber, or between the transfer chamber and a module, to allow the passage of the substrate while restricting the exchange of gas between the modules.

According to another feature of the invention, the rolling device the vacuum includes fins controlled in orientation about an axis parallel to the plane of travel of the substrate.

According to another feature of the invention, said modules are aligned and the transfer chamber is rectilinear and disposed above the modules.

According to another feature of the invention, the preparation module of the substrate is an ion etching.

According to another feature of the invention, a sputtering module includes at least one anode, the anode being integral with the conveying path and guide, and disposed to the substrate.

According to another feature of the invention, a sputtering module further comprises a plurality of at least one cathode, said cathode being remote from the substrate.

According to another feature of the invention, the anode-cathode distance is at least equal to 400 mm.

According to another feature of the invention, a reactive gas injector is arranged closest to said cathode.

According to another feature of the invention, said cathode is cylindrical and rotatable about an axis parallel to the plane of travel of the substrate.

According to another feature of the invention, said cathode is provided with a mask interposed between said cathode and the substrate, closest to said cathode, said mask having a shape capable of homogenizing a plasma from said cathode, to produce a uniform material deposition.

According to another feature of the invention, the mask is substantially planar, and has an opening ovoid with a major axis aligned with the axis of the cathode.

According to another feature of the invention, said mask has two walls, and the gas injector reagent is disposed between the two walls.

According to another feature of the invention, said cathode is paired with a mask within a subset generally replaceable.

According to another feature of the invention, said cathode is disposed on a door of the sputtering module opens to the outside.

According to another feature of the invention, the transport path and guide, within a sputtering module, has a forward path and return substantially U-shaped, about a central anode, presenting the face of the substrate to the deposition face at a first plurality of at least one cathode during the outward and face at a second plurality of at least one cathode during the return path.

According to another feature of the invention, the plurality of cathodes are movable along a direction parallel to the plane of travel of the substrate.

A second arrangement for driving a rotary tool, having a first wing comprising a machine according to any of the preceding embodiments, a second wing comprising a machine according to any of the preceding embodiments, the modules of retrieving both lock wings merges into a single lock module extraction, extraction lock said module being preceded by a pressing module, performing a pressing operation of the processed substrates from the two wings, one against the other.

According to another feature of the invention, the module performs pressing, under vacuum and at low temperature, a pressing operation of the two substrates from said two wings, whose sides have received the deposit (s) being arranged facing one against the other.

According to another feature of the invention, the two wings have the same number of module.

Other features, details and advantages of the invention shall become apparent more clearly of the detailed description given below as an indicator in connection with the accompanying drawings on which:

figure 1-has a first deposition machine,

figure 2-presents the interface between a module and a transfer chamber,

-figure 3 illustrates a preparation module,

figure 4-illustrates a sputtering module,

-figure 5 has a second deposition machine.

A Figure 1 is represented a first machine vacuum deposition, on a substrate 18, of rotary tool, according to the invention.

Such machine is operated as fully automatic and is constructed around the path of the substrate 18. It comprises a transport path 17 and guide said substrate 18. The conveying path and guide 17 can change based on a size, shape, and material type (continuous, discontinuous) of the substrate 18. It is capable of conveying the substrate 18, through the machine, to the transit from a module insertion gate 2, 16, 18 of the blank substrate, to a extraction lock 3, 4, of the treated substrate 18' after depositing one or more layers of material. The, the substrate 18 passes, successively and in order, through at least one preparation module of the substrate 6, 7, 14, 15, and at least one sputtering module 8-13.

The sputtering method requires a highly controlled environment in terms of vacuum pressure, temperature and, optionally, of reactive gas partial pressure. 2-16 All modules have an atmosphere individually pressure-controlled, temperature, and reactive gas partial pressure, and this may be completely automatic. The accuracy very demanding of the different control climate control is according to the needs of the sputtering method.

Pushed To address the requirements in terms of vacuum, thermal control and reactive gas partial pressure, of necessary insulation between the successive modules 2-16 the machine components, and in order to avoid any risk of pollution of the module by the other, while ensuring continuity in ambient conditions (a chain breaks vacuum is incompatible with the expected quality of the finished product), while allowing a transit a substrate 18, continuous or non-, said machine advantageously includes a transfer chamber 1 2-16 bringing together all modules. The transfer chamber 1 is designed in such a manner that the substrate 18 passes by the transfer chamber 1 to each passage between two successive modules 2-16. Therefore, upon a change of module 2-16, the substrate 18 is out of a module, transiting the transfer chamber 1 and enters the next module. Therefore, the substrate 18 passes never directly module having the ambience can be loaded with a reactive gas and/or for a material to be sprayed, to another module containing an atmosphere which may be different in terms of gas or material. The transfer chamber 1, a priori material free and reactive gas, thus as a buffer between two modules 2-16 pollution control. Furthermore, the transfer chamber 1 has, as in existing modules 2-16, an atmosphere pressure-controlled, temperature, and reactive gas partial pressure. The pressure setpoints and temperature are substantially the same as in the modules 2-16, the transfer chamber 1 and around the substrate 18 provides a continuity of the surround.

The transfer chamber 1 is also advantageously not bring together two successive modules 2-16 and hold between two such modules 2-16 an access space for maintenance, for example at least equal to 1200 mm.

Figure 2 is a detail of the junction between the transfer chamber 1 and any of the modules 8. Guided and driven by the conveying path and guide 17, a substrate 18 before treatment, herein a continuous substrate film-like, is received on the transfer chamber 1. It enters the module 8 by a first opening 20 II through the module 8 for forward and reverse is processed. The substrate 18 'after treatment by a second spring opening 20' for returning in the transfer chamber 1. Path It can then continue to a subsequent module. Figure 2 illustrates an important feature of the present invention: a rolling device vacuum, for example fins 19, is disposed at the junction between the module 7 and the transfer chamber 1. The rolling vacuum 19 seals the entire joint surface, excluding the two openings 20, 20'

The fins 19 are driven as orientation to performing rolling vacuum. Regulation of the reactive gas partial pressures within the modules 2-16 an automatic, screens the driving rolling or movable vanes 19 is performed based on the values measured can be indicated by: automatic regulating power plants gas streams or "mass-flow", partial pressure measurements, data from a mass spectrometer, of the running speed of the substrates, optionally of optical measurements, performed in situ, for controlling the thickness of the deposited layer of material, to allow the rolling screen 19 to open or close as a function of the measured values, to maintain the desired nominal partial pressure, and this despite the presence of the openings 20, 20'.

This type of equipment 19 is disposed at the interface between each module 2-16 of the machine and the transfer chamber 1.

The transfer chamber 1 is equipped with at least one cryogenic pump 22 for realizing the vacuum. 2-16 The modules are provided, each, of at least one cryogenic pump 21 dedicated to the drawing. These pumps 21, 22 are also provided with vacuum rolling screens 19.

The fins 19 rolling constitute a major component for operating said new principle pressure control. They avoid closing of a slide valve as in the prior art machines currently marketed (Pégasus , Sputter in-line systems, Leybold and other), while assuring perfect stability of the partial pressures programmed for each reactive gas within each module.

The fins 19 and allow the line openings 20, 20 ', which allow for the free circulation of the substrates 18, 18' continuously in the machine. Such treatment continuously reduces the production time compared to a periodic mode batch processing. This allows especially to the use of continuous long.

The ambient pressure and temperature, is controlled in the entire machine. The transfer chamber permits a transfer between the different modules 2-16 without interrupting said surround.

At both ends of the machine, are arranged two modules particular lock. At the first end or inlet end, the machine comprises a module insertion gate 2, 16, or loading. At the second end or outlet end, the machine comprises a module extraction lock 3, 4, or unloading. Lock These modules 2, 3, 4, 16, both introduction and extraction are substantially identical.

A introduction module is provided for introducing substrates or the blank 18 in the machine. A substrate of continuous type film is in the form of a roller which will be executed by the conveying path and guide 17 from the module insertion gate 2, 16. An extraction module 3, or 4 for removing the substrates 18' of the machine after treatment.

Lock These modules 2, 3, 4, 16, operate in the following manner. A module lock 2, 3, 4, 16, is connected to the transfer chamber 1 by an opening selectively closeable, for example by means of a slide valve. A module lock 2, 3, 4, 16, is further connected to the outside world to the machine by a door. When the opening is closed, the door can be opened to admit, respectively out, the substrate 18, 18', for example in the form of a roll. The machine is designed to accommodate rollers winding widths of 1400 mm for a length of 100 to 200 m. Opening the door causes the environment in the module returns to atmospheric pressure. In order to avoid, or at least reduce, the possibility of pollution, lock the modules 2, 3, open advantageously on clean rooms, for example 1000 quality. The door is then closed. Vacuum is then formed inside the lock module 2, 3, 4, 16, to present an environment comparable with that of the transfer chamber 1 and of the entire machine. The set indicative vacuum used is 2.10'⁶ mB. At this point, the valves drawers may be opened and the substrate is capable of transitioning between the transfer chamber 1 and the module 2, 3. Drawers The opening valves can be automatically triggered by reaching the desired vacuum.

In the case of a module insertion gate 2, handling and transport of the substrate 18 to the transfer chamber 1 can also be automatically triggered by reaching the desired vacuum.

Advantageously, a module lock 2, 3, is equipped with a cryogenic trap particles, such as " polycold ", placed under the slide valve. The trap pollution senses optionally introduced during the opening. Furthermore, the trap senses. prior to entry of the substrate 18 in the transfer chamber 1, water vapor from the desorption of the substrates 18. Therefore, a module lock 2, 3, mainly an introduction module 2, primer and participates in the degassing of the substrate 18.

The materials of the substrates 18 to be treated are distributed into five categories:

the mineral material (the optical lenses) that can withstand temperatures up to 400 °C,

the crystalline materials and metalloids,

ferrous and non-ferrous metals,

organic materials which cannot in all instances heated, the tissues can in no case be heated.

For the organic materials, a temperature substantially equal to 35° is preferred, both for storage, as for the treatment.

In the case of a module extraction lock 3, it may be useful to add a heating means, of regulating and maintaining the temperature between 35 °C and 38 °C.

When the atmospheric pressure (opening of a door of a lock module), single nitrogen is injected into the module 2, 3.

Illustratively, the internal dimension of a lock module 2, 3, can be: 2000 mm 1400 mm Depth x Width x Height 2300 mm. In a second embodiment of a detailed second machine further, the extraction module 3, 4, is caused to receive a roll produced larger. In the latter case, the dimensions are increased: 2000 mm 1600 mm Depth x Width x Height 2300 mm.

The arrangement one lock 2, 3, can be modified to accommodate a substrate 18 continuous roll with a carrier for automatically scrolling, or one or more substrates discontinuous with a support adapted to the shapes and sizes of substrates, processed in batches, continuously or periodically.

Generally, the ambient temperature in the entire machine is 35 °C. Regulation on this preset pressure is carried out taking into account warming, that may be important, of the substrate 18 during its passage in the sputtering 8-13 modules.

For permit discharge of calories produced thereby, a closed fluid circuit (water) can circulate in the cold modules 2-16 and the transfer chamber 1. This water cycled always has a temperature below the dew point. Efficient cooling is obtained with a water flowing under a pressure of 6 to 8 bar and a flow rate of 300 L/min.

A second circuit closed fluid (water) can circulate in the modules 2-16 and the transfer chamber 1. This water cycled has a temperature of 85 °C and a pressure greater than 5 bar. A cycling of the hot water for 2 hours is applied, preventive maintenance phase weekly, to perform degassing of all the components of the machine.

Between the module insertion gate 2 and lock the extraction module 3, is arranged a series of modules 2-16.

A first module, positioned immediately after the insertion module 2, is a preparation module 6, 15 of the substrate 18. Such a preparation module typically includes a module 6, 15, ion etching. The module 6, 15, performs a etching of the substrate 18, required before any cathodic deposition.

Such module 6, 15, shown in Figure 3, is equipped with means to perform the stripping of surface of the substrate 18 by a process Etching. One such method comprises, for example, ion milling performed by gas plasma 27, by means of at least an ion gun 26, such as a low voltage direct current. Such operation is typically carried out under a reactive gas partial pressure between 5.10'³ mB and 5.10'² mB. In order to provide a permanent plasma in the module 6, gas inputs can be made with neutral gases such as argon, neon or oxygen, the reactive gas can be changed in accordance with the material of the substrate having a surface to be stripped.

Referring to Figure 3, is represented such a module 6. Sharing The module 6, with all other modules 2-16, the following features. It is connected to the transfer chamber 1. The interface with said chamber 1 is equipped with fins 19 of the vacuum. The module comprises at least one control device 25 of the reactive gas also named mass-flow. The enclosure said module is advantageously closed by at least one (herein two) door 23, used only for maintenance purposes. The door 25 advantageously has at least one viewing window 24. The substrate 18 is advantageously guided through the module by the conveying path and guide 17 in a reciprocating forward and reverse. The vacuum is secured in the enclosure of the module by at least one central void comprising at least one cryogenic pump 21.

2-16 A module can also, advantageously, include, optionally, a slide valve 31, for completely isolate the module with respect to the transfer chamber 1. This is primarily used for maintenance operations, to need, during operations on a module or 2-16 on the transfer chamber 1, to atmospheric pressure, the entire machine.

The module 6 further comprises the specific characteristics of a module following ion etching. It comprises at least one barrel (herein four) stripping 26. The electron gun 26, electrostatic type, comprises a cathode and anode 28 is driven by a centrally disposed, connected to the conveying path and guide 17 and placed closest to the substrate 18, said substrate being interposed between said barrel and said anode stripping 26 28 27 to receive the bombardment. The anode 28 can be similar to the modules 29 anode sputtering.

Optionally, the machine may also include a second module 7, 14, for the preparation, placed after the etching module 6, 15. Such a second preparation module 7, 14, comprises a heating module 7, 14, of the substrate 18. A module Heating 7, 14, is necessarily located upstream of the modules 8-13 sputtering. The module 7, 14, mainly relates to the mineral materials which can withstand temperatures up to 400 °C.

A module Heating 7, 14, placed at the start of the production line, is beneficial to activation of the degassing water vapor, existing necessarily. It contributes to enhanced quality of preparing the substrate 18, , improving the quality of the deposition processes subsequently formed, and thus, an improvement in the quality of the products obtained.

The heating module 7, 14, comprises means for heating indicative power between 15 and 20 kW. It comprises regulation means to a bearing and control of the temperature of very high precision.

Illustratively, the internal dimension of a preparation module 6, 7, 14, 15, can be: 2000 mm 1100 mm Depth x Width x Height 2300 mm. The set indicative vacuum used is 2.10"⁷ mB.

In another embodiment, it is still possible to combine the stripping module 6, 15, and the heating module 7, 14, in the form of a single module performing the two functions of etching and then heating.

Referring again to Figure 1, the machine according to the invention is advantageously organized such that said modules 2-16 are aligned, the transfer chamber 1 being rectilinear. In accordance with an advantageous feature of the invention, the transfer chamber 1 is disposed above the modules 2-16, as shown.

After the module preparation 6, 7, always in the transportation direction of the substrate 18, is arranged at least one sputtering module 8-13 within which is performed at least one further coating deposition named. A sputtering module 8-13 is represented in Figure 4.

Illustratively, the internal dimension of a sputtering module 8-13, can be: 2000 mm 1100 mm Depth x Width x Height 2300 mm. The set indicative vacuum used is 2.10"⁷ mB.

In addition to the general characteristics, shared with all modules 2-16, as described above, a sputtering module 8-13 has the following features. It comprises at least one anode 29 (herein two). Said anode 29 is secured to electrically from the conveying path and guide 17, and is disposed to the substrate 18. The module 8-13 further comprises a plurality of cathodes 30. 8 For the module represented, said plurality of lugs comprises two blocks each including six cathodes 30. A first block is arranged on the side of "forward" circulation of substrate 18 and a second block is arranged on the side "return".

Sputtering 8-13 The modules are advantageously provided with magnetrons. A magnetron according to a known method, creates a magnetic field proximate to the substrate 18 which accelerates the particles projected and thus increases the quality of the deposited layer.

Note that all modules sputtering 8-13 can advantageously be totally identical. Each has its own control means, thereby creating and maintaining a specific atmosphere in its enclosure. The only element that is movable from a sputtering module to each other is the one or more materials deposited. All the parameters associated with a change in material deposited are configurable or controllable. Thus a spray module is actually universal. The change material is by changing cathode 30. The change in reactive gas is effected by changing the supply of said gas. If it is necessary to change a temperature, a vacuum pressure, a gas partial pressure or a potential difference anode/cathode, these parameters can be controlled, in order to adapt the module to its new function.

A module can still not be used. Thus a machine comprising a number of modules can perform 0 to N treatments, thereby providing great versatility to the machine.

In the case where a module is not used for a manufacturing, the substrate can normally pass through the module, which does not operate, but has a surround in continuity with the rest of the machine. Alternatively optional, it is still possible that the conveying path and guide 17 a switch allows direct, does not turn the substrate 18 in the module. The linear form of the transfer chamber 1 combined with the forward path and return of the substrate 18 in the modules 2-16 interfaces transfer chamber/1 module 2-16 on a single side of a module 2-16. Therefore, avoiding a 2-16 a switch module can be easily performed. This is an advantage of the linear form of the transfer chamber 1

2-16 If the module includes a slide valve 31 optional input, it is in this case possible to insulate the unused 2-16 module.

It is advantageous that said cathode 30 is as far as possible from the anode 29 and of the substrate 18. A large space between cathode and anode 30 29 of introduction 18 large substrate mainly according to the thickness, while allowing away from the cathode 30 relative to the substrate 18.

A large distance between the cathode and the substrate 30 18 prevents the heat the cathode 30 does not cause overheating of the substrate 18, detrimental for organic materials. This fact is very important, in that it contributes (with an effective cooling system) to allow the machine to process materials having a low melting point, such as plastic films.

In the machine according to the invention, the distance between anode and cathode 29 30 is at least equal to 400 mm.

When sputtering is in operation, on account of the presence of a potential difference between cathode and anode 30 29, an even deposit of pulverized material requires a relative movement of the substrate relative to the plurality of cathodes 30. The substrate 18 is, under the action of the conveying path and guide 17, subjected to scrolling movement smooth and continuous in the entire machine and particularly within a module 8. The plurality of cathodes 30 can be fixed and ensure an even deposit of material by transferring the substrate 18 to the cathode 30.

It is known to those skilled in the art today, that beyond 170 mm of distance between anode and cathode, the spray becomes too erratic weakening-rate and sputtering yield and product irregular deposits. To deposited quality at a distance greater than 400 mm, the invention comprises the following desirable features.

To implement the sputtering, the presence of a reactive gas neutral is necessary to allow the production of a plasma that allows the spraying for depositing material on the substrate 18. To control the quantity of this gas and injecting it where it is necessary, a reactive gas injector (not shown) is advantageously disposed as near the cathode 30.

The injection of reactive gas closest to the cathode 30 improves the plasma focus.

The sputtering method requires a material to be sprayed and to be projected onto the substrate 18. The material is formed as a target 32, formed of said material, generally high purity and agglomerated by example, by sintering. The target 32 is placed in close proximity to the cathode 30 and merges with said cathode 30. Until now, the targets/cathodes have been made in square shapes, rectangular or round, but still substantially planar and parallel to the plane of the substrate 18. Such a form does not provide control of the shape of the plasma and, further, said plasma changes substantially according to the wear of the cathode following spraying.

In one important feature of the invention, the target 32/cathode 30 is cylindrical and rotatable about the axis of said cylinder, said axis being disposed parallel to the plane of travel of the substrate 18. Advantageously, this axis is still perpendicular to the direction of travel. Such arrangement enables to have the substrate 18 a sector of a cylinder. The shape of that sector, and thus its influence on the shape of the plasma, little change in accordance with the change of the diameter of said cylinder, which variation results from the unavoidable wear of said target 32. It is, to maintain a plasma substantially identical in shape, containing the variation between a maximum diameter and a minimum diameter given. Such a form cylindrical be controlled the shape of the plasma. The cylindrical shape still allows for easy refilling when the minimum diameter is reached. Rotation allows, further, distribute wear of the target 32, while reproducing the target 32 almost the same as itself and thereby increase its working life before reaching the minimum diameter. The machine according to the invention accepts targets 32 of length (along the axis of the cylinder) of the order of 1.80 m. This can be sprayed on a substrate 18 of a width of 1.50 m.

In accordance with another important feature for focusing the plasma and thus to increase the anode/cathode distance, each cathode 30 is accompanied by a mask 33. The mask 33 is interposed between said cathode 30 and the substrate 18. Advantageously, said mask 33 is placed nearest to the target/32 the cathode 30. The mask 33 has a form capable of homogenizing a plasma from said cathode 30 to produce a uniform material deposition.

This form said mask 33 accurately determined by the numerical modeling plasma, by optimizing the shape of the mask 33 until uniform plasma.

For this purpose, the mask 33 is in the form of a plate, substantially planar, -shielding between the target 32 and the substrate 18. The shield plate has an opening 34 at its center for the passage of the material projected. The opening 34 is symmetrical, according to an axis obtained by orthogonal projection of the axis of rotation of the cathode 30 on the plane of said plate 33.

Surprisingly, while a rectangular opening (of constant width along said axis of symmetry) seemed stomp, it has been found as a narrowing of said opening 34 at the ends of said cylinder of the target 32 has, on the contrary, homogenize the plasma from said cathode 30 to obtain uniform deposition across the entire length of the cathode 30, or equivalent, over the entire width of the substrate 18. A ovate shape of the opening 34 of said mask 33 is therefore an important feature for performing a uniform deposition.

An advantageous embodiment according to the invention of performing said mask 33 to that it has two substantially parallel walls. In with more the output of the reactant gas injector between the two walls, the reactive gas is injected so as to exit said opening 34, closest to the cathode/target 30 plasma 32.

The shape of said opening 34 is adapted as a function of the material of the target 32/cathode 30 which produces a uniform spray. It is advantageous, in order to prevent any risk of confusion in a torque-target mask 32 33, matching each cathode/target 30 32 33 with its mask within a subset. The subassembly is advantageously removable from the module 8-13 in one piece. Therefore, when a cathode 30 is to be disassembled to be re-loaded with target material, it remains with its mask 33.

In order to simplify dismounting said cathode 30, during servicing, for a charging operation or to alter the configuration of the module by changing 8-13 deposited material, a cathode 30 is advantageously provided to a door 23 of the sputtering module. Thus said cathode 30 is easily accessible from outside the module to be replaced.

In accordance with an advantageous feature of the invention, the transport path and guide 17, within a module 8-13 sputtering, has a forward path and return substantially U-shaped, about a central anode 29, with the face of the substrate 18 to receive a deposition face at a first plurality of at least one cathode 30 during the outward and face at a second plurality of at least one cathode 30 during the return path.

The in that the substrate 18 is guided through the module 8-13 according to a forward path to a first cathode block 30, and then with a return path to a second cathode block 30, could configure module 8-13 sputtering for depositing a first material by means of the first block according to a first layer and, a second material by means of the second block according to a second layer. Of course the first and second materials may be the same thereby attaining a deposited material layer of double thickness.

It is still possible, within a single block containing many cathodes 30, associate a target 32 of different material for each cathode 30 to spray different materials.

The targets is normally carried out by sintering, it is possible, within a same target 32/cathode 30, of split more materials that, in this case, will be sprayed together to form a single layer composite.

The change of the material of the target 32, from materials metallic or dielectric, is able to change the deposited material and the function of the module 8-13.

It has been seen previously that relative movement of a substrate relative to the cathode 18 30 was required for an even deposit. This movement can be obtained by advancing the substrate 18. Advantageously, the cathode 30, or a set of cathodes, all of the cathodes or the first or second plurality of cathodes 30, is movable.

Such Disabled in a plane parallel to the plane of travel of the substrate 18, in a direction parallel to the movement of the substrate 18, can realize uniform deposition on a substrate stationary. This can be applied to a periodic process substrate, traveling by successive steps, for example with locking in each of the modules 2-16. This can be applied to substrates treated discontinuous batch, or a continuous substrate but moved periodically by sections of a length corresponding to a module 8-13.

Such Disabled, which can be combined with a displacement movement of the substrate 18, in the same direction or opposite direction, can still reduce heating of the substrate 18 by limiting the exposure time of the substrate 18 to the cathode 30.

These are just provide the deposition machine many design possibilities and, as well, great versatility.

Thus Such first machine, configurably to select and the succession of the constituent materials, perform, on a substrate 18 to a continuous film, deposition of successive thin layers of higher quality. Therefore, it is useful in treating rollers 200 m substrate film having a width of 1500 mm with the first machine.

A particularly useful product in the field of electromagnetic shielding is obtained by bonding, one on the other, a first and a second substrates processed film 18 by depositing successive sprayed layers, the face of the first substrate comprising depositing against the face of the second substrate comprising depositing.

Automatically To make such a product, it is desirable to construct a second arrangement for driving a rotary tool. The second machine, shown in Figure 5, comprises a first wing 2, 3, 6-10, comprising a machine similar to the first machine described above, and a second wing 4, 11-16, comprising a machine similar to the first machine described above. Extraction lock The modules 3, 4, of the treated substrate 18' of the two wings merges into a single lock module extraction, herein shown at the center. Lock The module extraction, 3, 4, eventually becoming somewhat larger to accommodate a roll of substrate 18' double, superimposing the processed substrates from the two wings.

The module extraction lock 3, 4, is, further, preceded by a pressing module 5, performing a pressing operation of the processed substrates 18' from the two wings, one against the other.

The pressing process, which alternatively patent of which the applicant is aware, performs, under certain conditions, a connection of two processed substrates particularly high performance. These conditions are more particularly described in said another patent. For the purposes of present patent, it is know that the conditions include: a particular material deposited in the last module 10, 11, a high vacuum environment in the enclosure of the pressing module 5, a mechanical action pressing the substrates together and also a very low temperature.

Therefore, said pressing module 5 performs, under vacuum and at low temperature, a pressing operation of the two substrates from said two wings, whose sides have received the deposit (s) being arranged facing one against the other.

The pressing performs a particularly effective bonding of the two substrates processed form, after pressing, a single continuous film which wraps around a roll in the extraction module single 3.

Illustratively, the internal size of the pressing module 5, can be:

X Depth 2000 mm Width x 1600 mm Height 2500 mm. The set indicative vacuum used is 2.10'⁷ mB.

The two substrates processed 18' from the two wings are directed by the transfer path in the module 17 pressing 5. The module includes two guide rolls which direct the processed substrates to two press rolls, by lowering the temperature of said substrates, two press rolls whose pressure is automatically adjusted.

The module pressing 5 is entirely made of a double wall forming a cavity of a thickness of 50 mm. Inside said cavity flows, at a rate of 300 litres/s, in a closed circuit, a fluid from the cooling system. Its temperature does not exceed the limit of the dew point. The stability of the partial pressures is performed automatically, by rolling of the pump flow.

A first set of cryogenic engineering (polycold , pipe nests, radiators and thermocouples) is integrated into the pressing module 5 and provides negative temperatures below :-150°C to + /-10 °C. The threshold for adjusting the temperature is :-110°C.

A second set of cryogenic engineering is integrated in the module pressing 5. Its performance refrigerant are identical to the first set, but it is provided with a control accuracy of finer temperature: + /-150 °C -2 °C. The second refrigerant system is connected to the two guide rollers and pressing.

In accordance with an advantageous feature, the machine is symmetrical in that it comprises for each of its wings, the same number of modules. Sputtering 8-13 The modules being identical and universal, it is possible to realize two films with deposits of different materials for each wing. The materials as-deposited may however be complementary between the two substrates. Instead, it is possible to realize two films with sequences of deposited materials perfectly identical for each wing. This is particularly suitable for the production of certain electromagnetic filters which take advantage of such a mirror symmetry of the layers deposited on the two substrates.

Such machine having two wings enables, advantageously, provide a "sandwich" double film with deposited layers protected between two films. It also enables, by configuring, use the two wings separately to simply double the production of a product substrate Mono. In the latter case, the substrates 18' are not pressed into the compression mold, and the lock of extracting comprises two rollers, if continuous are processed.

The machine, both the first and the second, is equipped with an automatic interfacing driving all sensors (temperature, pressure, partial pressure, position, speed, contact, mass spectrometer, deposition thickness, force, ..) and all the actuators (doors, fins, valves, motors, pumps, Heating, cryogenic generator, ion guns, rotation of the targets, Disabled cathodes, conveying path and guide, ...), to control the entire operation of the machine and the course of the process in a fully automated manner. The automatic drive includes a human machine interface to configure, previously, the method, control, and then tracking during its course.