СПОСОБ И УСТРОЙСТВО ДЛЯ УДАЛЕНИЯ С НЕСУЩЕЙ ПОДЛОЖКИ ОБРАТИМО МОНТИРУЕМОЙ ПОЛУПРОВОДНИКОВОЙ ПЛАСТИНЫ СО СФОРМИРОВАННЫМИ ПРИБОРАМИ

... 1. Кольцевой фиксатор для разделения соединенных подложек, где упомянутый кольцевой фиксатор имеет плоский корпус, главным образом, круглой формы и центральное отверстие, при этом упомянутый корпус содержит: ! круговую внутреннюю боковую стенку; ! круговую наружную боковую стенку; ! верхнюю поверхность, проходящую между внутренней боковой стенкой и наружной боковой стенкой; ! соприкасающуюся с пластиной поверхность, проходящую наружу от внутренней боковой стенки, причем упомянутая соприкасающаяся с пластиной поверхность заканчивается в месте корпуса, которое находится на расстоянии от наружной боковой стенки; и ! проходящий внутрь круговой выступ, который имеет наклон внутрь от упомянутого места и на удалении от соприкасающейся с пластиной поверхности, ! при этом упомянутая соприкасающаяся с пластиной поверхность и кольцевой выступ совместно образуют принимающую подложку выемку. ! 2. Кольцевой фиксатор по п.1, в котором упомянутый корпус является кольцевым фиксатором с одной прорезью, имеющим ...

МНОГОПЕРЕХОДНЫЙ СОЛНЕЧНЫЙ ЭЛЕМЕНТ, ИМЕЮЩИЙ ПОКРОВНОЕ СТЕКЛО ИЗ ПЛАВЛЕНОГО КВАРЦА

Verfahren zum Herstellen eines Halbleiter-stromtores und Vorrichtung zum Durchfuehren dieses Verfahrens

Laserbearbeitungsvorrichtung

Eine Fokussiereinheit einer Laserbearbeitungsvorrichtung beinhaltet: eine Fokuslinse, die einen Laserstrahl, der durch eine Oszillationseinheit für einen Laserstrahl oszilliert wird, fokussiert; und eine sphärische Aberrationsverlängerungslinse, welche die sphärische Aberration der Fokussierlinse verlängert. Ein gepulster Laserstrahl wird von der Fokussiereinheit auf einem Werkstück aufgebracht, das an einem Einspanntisch gehalten wird, um Abschirmtunnel auszubilden, von denen jeder aus einem feinen Loch und einem amorphen Bereich, der das feine Loch abschirmt, besteht, wobei die Abschirmtunnel sich von einer oberen Oberfläche zu einer unteren Oberfläche des Werkstücks erstrecken.

Wasser-Bearbeitungsverfahren

Es wird ein Wafer-Bearbeitungsverfahren zum Aufteilen eines Wafers in einzelne Bauelemente entlang von Trennlinien offenbart, die an der Vorderseite des Wafers ausgebildet sind. Das Wafer-Bearbeitungsverfahren schließt einen Schutzbandanbringschritt zum Anbringen eines Schutzbands, das eine Haftschicht aufweist, an der Vorderseite einer Funktionsschicht des Wafers in einem Zustand ein, in dem die Haftschicht des Schutzbands mit der Vorderseite der Funktionsschicht in Kontakt ist, und einen Wafer-Teilungsschritt zum Halten des Wafers mit dem Schutzband an einer Haltefläche eines Spanntischs in dem Zustand, in dem das Schutzband mit der Haltefläche in Kontakt ist, und als nächstes Aufbringen eines Laserstrahls, der eine Absorptionswellenlänge für das Substrat und die Funktionsschicht des Wafers aufweist, entlang jeder Trennlinie von der Rückseite des Substrats aus, um eine laserbearbeitete Nut mit einer Tiefe auszubilden, welche das Schutzband entlang jeder Trennlinie erreicht, wodurch der ...

TRANSPORTSYSTEM

Ein Transportsystem zum Transportieren eines Werkstücks zu jeder von mehreren Bearbeitungsvorrichtungen beinhaltet einen Transportdurchgang, ein automatisiertes Transportfahrzeug zum Bewegen auf dem Transportdurchgang, wobei das automatisierte Transportfahrzeug ein Aufnahmeelement für ein Werkstück, einen Bewegungsmechanismus und einen Empfänger beinhaltet, eine Speichereinheit, die eine Haltebasis für ein Aufnahmeelement und einen Empfänger beinhaltet, und eine Transporteinheit für ein Aufnahmeelement zum Transportieren des Aufnahmeelements für ein Werkstück zwischen einem Bereich des Transportdurchgangs oberhalb der Speichereinheit und der Haltebasis für ein Speicherelement oder zwischen einem Bereich des Transportdurchgangs oberhalb der Bearbeitungsvorrichtung und dem Inneren der Bearbeitungsvorrichtung.

Laser-Chipschneidvorrichtung

Laser-Chipschneidvorrichtung, die veranlasst, dass Laserlicht, von welchem eine Konzentrationsstelle zu dem Inneren eines Wafers angeordnet ist, durch die Oberfläche des Wafers einfällt, während das Laserlicht gescannt wird, und den Wafer durch Ausbilden eines modifizierten Bereichs innerhalb des Wafers in Chips zerschneidet, um den Wafer in einzelne Chips zu teilen, wobei die Laser-Chipschneidvorrichtung folgendes aufweist: eine Positionserfassungsvorrichtung, die eine Position bezüglich der Dickenrichtung der Oberfläche des Wafers bei der Einfallstelle des Laserlichts erfasst; eine zweite Positionserfassungsvorrichtung, die getrennt von der ersten Positionsvorrichtung vorgesehen ist und eine Position bezüglich der Dickenrichtung der Oberfläche des Wafers im Voraus erfasst; und einen Steuerabschnitt, der die Position bezüglich der Dickenrichtung der Konzentrationsposition innerhalb des Wafers steuert, wobei der Steuerabschnitt dann, wenn das Laserlicht von der Außenseite einer Peripherie ...

Vorrichtung und Verfahren zum Doppelseitenpolieren eines Werkstücks

Es werden eine Doppelseitenpoliervorrichtung und ein Doppelseitenpolierverfahren bereitgestellt, die ein Doppelseitenpolieren eines Werkstücks so beenden können, dass das Werkstück selbst dann, wenn Doppelseitenpolieren des Werkstücks wiederholt durchgeführt wird, eine gewünschte Form aufweist. Das Steuermittel 20 bestimmt von einem basierend auf der Amplitude der Änderung der Temperatur der Trägerplatte 3 bestimmten Referenzzeitpunkt eine Versatzzeit für die nächste Charge, während der zusätzliches Doppelseitenpolieren durchgeführt wird; und beendet das Doppelseitenpolieren nach Ablauf der bestimmten Versatzzeit von dem Referenzzeitpunkt. Die Versatzzeit wird basierend auf einem vorhergesagten Wert des Formindexes des Werkstücks 1 in der nächsten Charge bestimmt, der anhand des tatsächlichen Werts des Formindexes des in einer oder mehreren vorherigen Chargen doppelseitenpolierten Werkstücks 1 und einer Differenz der Versatzzeit zwischen Chargen vorhergesagt wird.

Vorrichtung zum Debonden von Dünnwafern

Eine Debondierstation (6) zum Trennen von miteinander mittels einer Adhäsiv-Schicht (3) zu Waferstacks (1) verbundenen Systemwafern (4) und Trägerwafern (2) weist eine Trennstation (12) auf, mittels der die Adhäsionskraft der Adhasiv-Schicht (3) thermisch soweit aufgehoben wird, dass ein Roboter (10) den dünnen Systemwafer (4) vom Trägerwafer (2) lösen kann, ohne dass der Systemwafer (4) beschädigt wird. Anschließend wird durch eine Folienabziehvorrichtung (15) der Trägerwafer (2) aufbereitet, so dass er wieder mit einem Systemwafer (4) bestückt werden kann.

Haltetisch und Verwendung des Haltetischs

Haltetisch (5) zum Halten eines Wafers (W), der einen Bauelementbereich (83), an dem mehrere Bauelemente ausgebildet sind, und einen Umfangsrandbereich (84), der den Bauelementbereich (83) umgibt, an einer Vorderseite (80) des Wafers (W) aufweist, wobei der Wafer (W) ferner einen an einer Rückseite (81) des Umfangsrandbereichs (84) ausgebildeten ringförmigen Verstärkungsabschnitt (85) aufweist; der Haltetisch (5) eine obere Oberfläche aufweist, die mit einer ringförmigen Austrittsnut (53) zum Ermöglichen des Austritts eines Laserstrahls ausgebildet ist, wobei die ringförmige Austrittsnut (53) so ausgebildet ist, dass sie einem Grenzabschnitt (86) zwischen dem Bauelementbereich (83) und dem ringförmigen Verstärkungsabschnitt (85) des an der oberen Oberfläche des Haltetischs (5) gehaltenen Wafers (W) entspricht, und ein unteres Ende (54) der Austrittsnut (53) angeschrägt und mit feinen Unebenheiten zum Streuen des Laserstrahls ausgebildet ist.

HALBLEITER-BAUELEMENTCHIP UND HERSTELLUNGSVERFAHREN FÜR EINEN HALBLEITER-BAUELEMENTCHIP

Ein Halbleiter-Bauelementchip beinhaltet ein Halbleiter-Substrat, das eine erste Oberfläche und eine zweite Oberfläche gegenüber der ersten Oberfläche aufweist, ein Halbleiter-Bauelement, das an der ersten Oberfläche des Halbleiter-Substrats angeordnet ist, eine Verbindungsanordnung, die ein Ende verbunden mit dem Halbleiter-Bauelement und ein anderes Ende freiliegend an einer Oberfläche einer Funktionsschicht aufweist, die an der ersten Oberfläche des Halbleiter-Substrats angeordnet ist, mehrere externe Verbindungselektroden, die an der Oberfläche der Funktionsschicht montiert sind und elektrisch mit dem anderen Ende der Verbindungsanordnung verbunden sind, einen Abschirmfilm für eine elektromagnetische Welle zum Abschirmen elektromagnetischer Wellen, der an der zweiten Oberfläche des Halbleiter-Substrats und seitlichen Oberflächen der Funktionsschicht angeordnet ist, und eine Erdungsverbindung, die elektrisch mit dem elektromagnetischen Abschirmfilm verbunden und an der Funktionsschicht ...

Laserbearbeitungsvorrichtung

Einrichtung zum Vereinzeln von Silizium-Wafern von einem Stapel

Die Erfindung betrifft eine Einrichtung zum Vereinzeln von feuchten Silizium-Wafern (2) von einem Waferstapel (1), wobei die feuchten Wafer (2) einzeln vom Waferstapel (1) trennbar und an sich anschließende Förderelemente (7) übergebbar sind, wobei die Einrichtung Vereinzelungswalzen (4) aufweist, auf denen der Waferstapel (1) aufsetzbar ist, wobei durch Drehung der Vereinzelungswalzen (4) der unterste Wafer (2.1) unter einer Abstreifleiste (5) durch eine waferdicke Lücke zwischen Walzenebene (I) und Abstreifleiste (5) schiebbar und durch elastische Pressung von einem übereinanderliegenden, mit gleicher Drehzahl angetriebenen Auszugswalzenpaar (6.1 und 6.2) aus dem Waferstapel (1) herausziehbar ist.

Verfahren und Stoffmischung zur Montage und Demontage von Halbleiterscheiben

Electronic apparatus for manufacturing liquid crystal display device comprises unitary vacuum processing chamber, upper and lower stages confronting each other at upper and lower spaces, and first substrate lifting system

An electronic apparatus comprises unitary vacuum processing chamber (110), upper and lower stages (121, 122) confronting each other at upper and lower spaces inside the vacuum processing chamber to bond first and second substrates (510, 520), and first substrate lifting system (400) formed in the lower stage for lifting the second substrate. An independent claim is also included for a method for manufacturing liquid crystal display device comprising placing substrate on first substrate lifting system through moving the first substrate lifting system along upward direction, and placing substrate on upper surface of lower stage through moving the first substrate lifting system along downward direction.

Device used in production of electronic components comprises plate-like bodies, one having upper side with pattern made from recesses

A device comprises a first plate-like body (1) having an upper side (31) and a second plate-like body (2) having an upper side (32). The upper sides are joined and the upper side of the first body has a pattern made from recesses (3). The pattern represents the individual pieces to be produced, the pieces being surrounded by the recesses. The depth of the recesses corresponds to the depth of the individual pieces to be produced. An Independent claim is also included for a process for separating the plate-like bodies. Preferred Features: The first plate-like body is a multiple layered ceramic substrate and is a semiconductor wafer whose upper side carries integrated circuits. The individual pieces are chips to be thinly ground.

Improvements relating to the manufacture of semi-conductor devices

... 1,098,398. Severing by grinding. LICENTIA PATENT - VERWALTUNGS G.m.b.H. April 26, 1965, No. 17525/65. Heading B3D. [Also in Division H1] A metal-coated silicon plate 2 is divided into smaller rectangular discs by the use of a cutting tool consisting of a set of spaced diamond saw blades 5. The blades and the spacers 6 between them are secured to a common rotary shaft 3 and each blade is a disc of steel or bronze with a bevelled edge clad with diamond powder, the included angle 8 of the symmetrically bevelled tip being between 30 and 120 degrees. The metal of the metal-coated plate may be gold, with or without an underlying layer of nickel. The silicon may contain one or more PN junctions, the completed devices thus constituting diodes or transistors. The silicon is supported during cutting by cementing it to a support plate, e.g. of glass.

Handler system for cutting a semiconductor package device

Improvements in electrical translating devices such as contact rectifiers

... 599,341. Grinding and polishing. WESTERN ELECTRIC CO., Inc. Sept. 14, 1945, No. 23834. Convention date, March 24. 1944. [Class 60] [Also in Group XL] Wedge shaped units of silicon of the form shown in Fig. 7 for use in crystal detectors are formed by grinding the surface of flat rectangular wafers of silicon. The wafers 2 are cemented into recesses in a chuck plate 3 at the desired angle. The chuck plate 3 is driven by shaft 4 which imparts both a rotary and an oscillatory movement relative to a grooved meta] lap 6 which is rotated at the bottom of a suitable bath 5, an abrasive such as boron carbide being used. After one face 12 has been formed on the silicon wedge the grinding lap 6 is by a polishing lap. The units are then removed und cemented into the chuck again in reversed position and the second face 12 is ground and then polished.

Method and device for facilitating separation of sliced wafers

METHOD AND APPARATUS FOR FORMING OBLIQUE GROOVE IN SEMICONDUCTOR DEVICE

Bonding of diamond wafers to carrier substrates

Integrated circuit handling process and apparatus

CUT PROCEDURE FOR A TAPE AND DEVICE FOR CUTTING A TAPE

VERFAHREN UND VORRICHTUNG ZUM BONDEN VON WAFERN

The invention relates to a process and a device for bonding at least two substrates (1, 2), in particular semiconductor substrates or wafers, having the following features: a) a lower pressure plate (5) for holding the substrates (1, 2) and transferring pressure and, in particular, heat to the substrates (1, 2), b) an upper pressure plate (6) located opposite the lower pressure plate (5) for transferring pressure and, in particular, heat to the substrates (1, 2), c) heating means (7, 8) for heating up the substrates (1, 2), in particular to temperatures above 250° C., and d) pressure charging means, in particular an actuator (9), for charging the lower (5) and/or upper pressure plate (6) with a pressing force F, in particular higher than 500 N, preferably higher than 1,000 N. According to the invention, the upper pressure plate (6) and/or the lower pressure plate (5) are substantially free from the chemical elements Ti and Mo at least on one substrate contact surface (5o, 6o) facing the ...

DEVICE FOR THE SEPARATION FROM TWO ONE ON THE OTHER ARRANGEMENTS SCHEIBENFÍRMIGEN ELEMENTS WITH THE WITHDRAWAL

ULTRASONIC CLEANING MODULE AND PROCEDURE

KOMBINATION AUS EINEM TRÄGER UND EINEM WAFER

PROCESSING DEVICE

Eine Verarbeitungsvorrichtung schließt einen Spanntisch zum Halten eines Werkstücks, eine Verarbeitungseinheit zur Verarbeitung des auf dem Spanntisch gehaltenen Werkstücks, während dem Werkstück Prozesswasser zugeführt wird, und eine an dem Boden der Verarbeitungsvorrichtung befestigte Wasserwanne zur Aufnahme des Prozesswassers bei Wasserleckage ein.

A system for testing wafers AlignedPairsRelated handling techniques globaux sand

Es werden ein System und ein Verfahren im industriellen Maßstab zum Handhaben präzise aufeinander ausgerichteter und zentrierter Halbleitersubstrat (zum Beispiel Wafer)-Paare für Substrat-zu-Substrat (zum Beispiel Wafer-zu-Wafer)-Ausrichtungs- und Bondungsanwendungen bereitgestellt. Einige Ausführungsformen umfassen eine Vorrichtung für den Transport aufeinander ausgerichteter Substrate, die ein Rahmenelement und eine Abstandshalteranordnung aufweist. Die zentrierten Halbleitersubstratpaare können innerhalb eines Verarbeitungssystems, das die Vorrichtung für den Transport aufeinander ausgerichteter Substrate verwendet, optional unter Robotersteuerung, positioniert werden. Die zentrierten Halbleitersubstratpaare können ohne Gegenwart der Vorrichtung für den Transport aufeinander ausgerichteter Substrate in der Bondungsvorrichtung miteinander verbondet werden. Die Bondungsvorrichtung kann eine zweite Abstandshalteranordnung umfassen, die in Abstimmung mit derjenigen für die Vorrichtung für ...

Apparatus and method for releasing a first substrate

Die vorliegende Erfindung betrifft eine Vorrichtung zum Lösen eines Trägerwafers (8) von einem Produktwafer (6) in einer Löserichtung (L) mit mindestens zwei quer zur Löserichtung (L) und in einer Radialrichtung (R) zum Trägerwafer (8) geführten Klemmelementen (1, 1', 1", 1'''), die vorzugsweise an die Außenkontur des Trägerwafers angepasst sind, zur Klemmung des Trägerwafers (8) quer zur Löserichtung (L), wobei die Klemmelemente (1, 1', 1", 1"') elastische Konturaufnahmeelemente (3, 3') zur Aufnahme und Fixierung einer jeden Waferkante aufweisen sowie einer Substrathalterung (11, 11') zum Halten des Produktwafers (6) und Mitteln zum Lösen des Trägerwafers (8) vom Produktwafer (6) durch Bewegung der Substrathalterung (11, 11') entgegen der Löserichtung (L). Weiterhin betrifft die vorliegende Erfindung ein korrespondierendes Verfahren zum Lösen der Wafer voneinander.

PROCEDURE AND SYSTEM FOR THE REACTIVE ATOMIC PLASMA PROCESSING WITH ATMOSPHERIC PRESSURE FOR SURFACE MODIFICATIONS

DEVICE AND PROCEDURE FOR SPLITTING

VORRICHTUNG UND VERFAHREN ZUM AUFBRINGEN UND/ODER ABLÖSEN EINES WAFERS AUF EINEN/VON EINEM TRÄGER

The invention relates to a device for applying and/or detaching a wafer to/from a carrier with a deformable membrane which can be aligned parallel to the contact surface of the wafer, with one contact side for at least partial contact-making with the contact surface, deformation means which are located backward to the contact side for deformation of the membrane which can be controlled in a defined manner and adhesion means for adhesion of the wafer to the membrane and process for detaching and/or applying a wafer to/from a carrier with a corresponding device.

VORRICHTUNG UND VERFAHREN ZUM AUFBRINGEN UND/ODER ABLÖSEN EINES WAFERS AUF EINEN/VON EINEM TRÄGER

The invention relates to a device for applying and/or detaching a wafer to/from a carrier with a deformable membrane which can be aligned parallel to the contact surface of the wafer, with one contact side for at least partial contact-making with the contact surface, deformation means which are located backward to the contact side for deformation of the membrane which can be controlled in a defined manner and adhesion means for adhesion of the wafer to the membrane and process for detaching and/or applying a wafer to/from a carrier with a corresponding device.

METHOD AND APPARATUS FOR BONDING TWO WAFERS

Die vorliegende Erfindung betrifft eine Vorrichtung zum Bonden zweier Wafer (2, 3) an einer Verbindungsfläche V der Wafer (2, 3) wobei ein Druckübertragungsmittel mit einer Druckfläche D zur Beaufschlagung der Wafer (2, 3) mit einem Bonddruck an der Druckfläche D vorgesehen ist, dadurch gekennzeichnet, dass die Druckfläche D kleiner als die Verbindungsfläche V ist. Weiterhin betrifft die vorliegende Erfindung ein Verfahren zum Bonden zweier Wafer (2, 3) an einer Verbindungsfläche V der beiden Wafer (2, 3), wobei durch Druckübertragungsmittel (1) mit einer Druckfläche D zur Beaufschlagung der Wafer (2, 3) ein Bonddruck nacheinander auf Teilabschnitte der Verbindungsfläche V aufgebracht wird.

VERFAHREN UND VORRICHTUNG ZUM BONDEN ZWEIER WAFER

The invention relates to a device for bonding two wafers (2, 3) at a connection surface (V) of said wafers (2, 3), a means for transmitting pressure being provided which comprises a pressure surface (D) for applying, at said pressure surface (D), a bonding pressure to the wafers (2, 3), and said device being characterised in that the pressure surface (D) is smaller than the connection surface (V). The invention additionally relates to a method for bonding two wafers (2, 3) at a connection surface (V) of the two wafers (2, 3), using pressure-transmitting means (1) with a pressure surface (D) for applying pressure to the wafers (2, 3) in order to apply a bonding pressure to successive subsections of the connection surface (V).

Method and apparatus for aligning and centering of wafers

Eine Vorrichtung zum Zentrieren von kreisrunden Wafern, mit einem Chuck zum Stützen eines kreisrunden Wafers auf einer Oberseite des Chucks und zum Zentrieren und Ausrichten des Wafers (20, 30), indem zwei drehbewegliche Ausrichtungsarme (460A, 460B) in Richtung Mitte (465) des Chucks (222, 232, 464) drehbar sind, wobei ein dritter Ausrichtungsarm (460C) linear entlang einer ersten Achse in Richtung Mitte (465) des Chucks (222, 232, 464) bewegbar ist, bis ein Ausnehmungsfinder (472) in eine am Umfangsrand des Wafers (20, 30) ausgebildete Ausnehmung (469) eingreift, und wobei der Ausnehmungsfinder (472) linear entlang der ersten Achse bewegbar ist und eine vordere längliche Komponente (473a) aufweist, die sich entlang einer Achse koplanar zum Chuck (222, 232, 464) erstreckt und senkrecht zur ersten Achse verläuft, wobei eine Platte (488) auf einer Seite der vorderen länglichen Komponente (473a) angeordnet ist, wobei bei Antrieb des Ausnehmungsfinders (472) entlang der ersten Achse eine Distanz ...

Method and apparatus for leveling, force compensation and contact sensing wherein semiconductor wafers

Eine Waferbondervorrichtung umfasst eine untere Aufspannvorrichtung, eine obere Aufspannvorrichtung, eine Prozesskammer und drei Einstellmechanismen. Die drei Einstellmechanismen sind um einen oberen Deckel herum und voneinander beabstandet angeordnet und sind außerhalb der Prozesskammer angeordnet. Jeder Einstellmechanismus umfasst eine Komponente zum Erfühlen eines Kontakts mit der oberen Aufspannvorrichtung, eine Komponente zum Einstellen der Vorbelastungskraft der oberen Aufspannvorrichtung und eine Komponente zur Nivellierung der oberen Aufspannvorrichtung.

PROCEDURE FOR THE PRODUCTION OF A SPLICING TAPE FROM A DISK-SHAPED SEMICONDUCTOR SUBSTRATE ON FLEXIBLE ADHÄSIVEN A TRANSPORTATION CARRIER AS WELL AS MECHANISM TO THE EXECUTION OF THIS PROCEDURE

METHOD AND APPARATUS FOR REMOVING A WAFER FROM A CARRIER SUBSTRATE REVERSIBLY MOUNTED MODULE

Neue Demontageverfahren und -vorrichtungen zum Trennen temporär, permanent oder semipermanent verklebter Substrate und Gegenstände, die aus diesen Verfahren und Vorrichtungen hergestellt werden, werden bereitgestellt. Die Verfahren umfassen das Demontieren eines Bausteinwafers von einem Trägerwafer oder -substrat, die nur an ihren Außenumfängen stark verklebt wurden. Die Kantenklebeverbindungen werden chemisch, mechanisch, akustisch oder thermisch erweicht, aufgelöst oder zerstört, um zu ermöglichen, die Wafer leicht mit sehr geringen Kräften und bei oder in der Nähe von Raumtemperatur in dem passenden Stadium in dem Herstellungsverfahren zu trennen.

VERFAHREN UND VORRICHTUNG ZUR ENTFERNUNG EINES REVERSIBEL MONTIERTEN BAUSTEINWAFERS VON EINEM TRÄGERSUBSTRAT

New demounting methods and apparatuses for separating temporarily, permanently, or semi-permanently bonded substrates and articles formed from those methods and apparatuses are provided. The methods comprise demounting a device wafer from a carrier wafer or substrate that have only been strongly bonded at their outer perimeters. The edge bonds are chemically, mechanically, acoustically, or thermally softened, dissolved, or disrupted to allow the wafers to be easily separated with very low forces and at or near room temperature at the appropriate stage in the fabrication process. A clamp for facilitating separation of the bonded substrates is also provided.

VERFAHREN UND VORRICHTUNG ZUM AUSGERICHTETEN ZUSAMMENFÜHREN VON SCHEIBENFÖRMIGEN HALBLEITERSUBSTRATEN

Procedure for dividing several semiconductor arrangements

PROCEDURE AND DEVICE FOR BONDING AND DEBONDEN OF SYSTEMWAFERN ON TRÄGERWAFERN

Method and apparatus for cleaving a substrate

Device and method for mechanically texturing a silicon wafer intended to comprise a photovoltaic cell, and resulting silicon wafer

The invention relates to a novel solution for texturing silicon wafers (4) intended to comprise photovoltaic (PV) cells. Silicon wafers can be produced, the surface of which include uniformly engraved patterns having a depth of between 5 and 50 m.

DIE HEAD FOR HARDENING ADHESIVE COMPOUNDS BY THERMOCOMPRESSION

PROCESS AND APPARATUS FOR DISENGAGING SEMICONDUCTOR DIE FROM AN ADHESIVE FILM

Substrate processing apparatus, substrate support apparatus, substrate processing method, and substrate fabrication method

METHOD AND APPARATUS FOR SPLITTING SEMICONDUCOR WAFER

ARTICULATING ENDOSCOPIC SURGICAL APPARATUS

A surgical instrument is provided for use in endoscopic or laparoseopic procedures. The instrument includes a handle portion, an endoscopic portion extending from the handle portion, an articulating section pivotably connect ed to a distal end portion of the endoscopic portion, and a retractor assembly operatively associated with the articulating section. Structure is provided for manipulating the articulating section relative to the longitudinal axis of the endoscopic portion within an angular degree of rotation. An injection port may also be provided to delive r fluids through the endoscopic portion to the operative site.

SUBSTRATE PROCESSING APPARATUS AND METHOD

One wafer is placed on a wafer support table with its frontside facing upward, and the other wafer is chucked by a wafer chuck portion with its frontside facing upward. The wafer chuck portion is pivoted about a shaft through about 180.degree. to make the two wafers face each other substantially parallel. In response to the cancel of the chucking of the upper wafer by the wafer chuck portion, the central portion of the upper wafer is pressed by a press pin to superimpose the two wafers.

SUBSTRATE PROCESSING APPARATUS AND METHOD

One wafer is placed on a wafer support table with its frontside facing upward, and the other wafer is chucked by a wafer chuck portion with its frontside facing upward. The wafer chuck portion is pivoted about a shaft through about 180.degree. to make the two wafers face each other substantially parallel. In response to the cancel of the chucking of the upper wafer by the wafer chuck portion, the central portion of the upper wafer is pressed by a press pin to superimpose the two wafers.

Verfahren zum Zerlegen einer Halbleiterscheibe

Verfahren zum Herstellen einer Vielzahl von Halbleiterbauelementen

Verfahren zum Zertrennen von plattenförmigen Halbleiterkörpern in kleinflächigere Körper

Verfahren zum Zerteilen metallbeschichteter Si-Scheiben

VERFAHREN ZUM ABLOESEN VON HALBLEITERCHIPS VON EINER UNTERLAGE OHNE STOERUNG DER CHIP-ORIENTIERUNG.

Chip binder.

Device for pressing semiconductor chips located on a substrate.

Eine Vorrichtung zum Anpressen von auf einem Substrat (1) angeordneten Halbleiterchips (2) umfasst eine Substratauflage (3) und ein relativ zur Substratauflage in einer vorbestimmten Bewegungsrichtung (4) bewegbares Werkzeug (5), das mehrere in Bewegungsrichtung des Werkzeugs verschiebbar gelagerte Anpressstempel (13) zum Anpressen der Halbleiterchips aufweist. Das Werkzeug weist eine mit Druckluft beaufschlagbare Druckkammer (10) auf. Alle Anpressstempel sind entlang einer Geraden (12) angeordnet. Jeder der Anpressstempel weist einen an seinem der Druckkammer zugewandten Ende einen senkrecht zur Bewegungsrichtung des Werkzeugs und senkrecht zur genannten Geraden verlaufenden Balken (17) auf. Im Bereich zwischen der Druckkammer und den Anpressstempeln sind Kolben (14) angeordnet, die in Bewegungsrichtung des Werkzeugs verschiebbar sind. Die eine Seite der Kolben (14) ist dem in der Druckkammer herrschenden Druck ausgesetzt und die andere Seite liegt auf einem der Balken der Anpressstempel ...

Bonding head for mounting components.

Ein Bondkopf (1) für die Montage von Bauelementen umfasst einen Schaft (2) und ein Gehäuseteil (3), in dem der Schaft (2) gelagert ist. Die Lagerung des Schafts (2) ermöglicht sowohl eine Drehung des Schafts (2) um eine Achse (6) als auch eine Verschiebung des Schafts (2) in der Längsrichtung der Achse (6) um einen vorbestimmten Hub H. Der Bondkopf (1) umfasst weiter einen Elektromotor, der einen Stator und einen Rotor umfasst, wobei der Stator am Gehäuseteil (3) und der Rotor am Schaft (2) befestigt ist, einen Encoder, um die Drehlage des Schafts (2) zu messen, und einen Kraftgeber, um den Schaft (2) mit einer Kraft zu beaufschlagen. Der Stator umfasst mit Strömen beaufschlagbare Spulen (7), der Rotor umfasst eine Vielzahl von Permanentmagneten (8). Eine in Längsrichtung der Achse (6) gemessene Länge der Permanentmagnete (8) ist um wenigstens den Hub H kürzer oder länger als eine in Längsrichtung der Achse (6) gemessene wirksame Länge der Spulen (7).

Bonding head for mounting components and the bonder with such a bonding head.

Ein Bondkopf (1) für die Montage von Bauelementen umfasst einen Schaft (2) und ein Gehäuseteil (3), in dem der Schaft (2) gelagert ist. Die Lagerung des Schafts (2) ermöglicht sowohl eine Drehung des Schafts (2) um eine Achse (6), als auch eine Verschiebung des Schafts (2) in der Längsrichtung der Achse (6) um einen vorbestimmten Hub H. Der Bondkopf (1) umfasst weiter einen Elektromotor, der einen Stator und einen Rotor umfasst, wobei der Stator am Gehäuseteil (3) und der Rotor am Schaft (2) befestigt ist, einen Encoder, um die Drehlage des Schafts (2) zu messen, und einen Kraftgeber, um den Schaft (2) mit einer Kraft zu beaufschlagen. Der Stator umfasst mit Strömen beaufschlagbare Spulen (7), der Rotor umfasst eine Vielzahl von Permanentmagneten (8). Eine in Längsrichtung der Achse (6) gemessene Länge der Permanentmagnete (8) ist um wenigstens den Hub H kürzer oder länger als eine in Längsrichtung der Achse (6) gemessene wirksame Länge der Spulen (7).

Positioning device.

Die Erfindung betrifft eine Positionierungsvorrichtung (100) zum Positionieren eines Substrats (101), insbesondere eines Wafers, mit: einer Prozesskammer; einem Grundkörper (105); einem Trägerelement (107), welches eine Auflage (109) zum Auflegen des Substrats (101) umfasst, wobei das Trägerelement (107) über dem Grundkörper (105) angeordnet und hinsichtlich seines Abstandes vom Grundkörper (105) bewegbar ausgebildet ist; und einer Halterung (111) für ein weiteres Substrat (103), insbesondere für einen weiteren Wafer oder eine Maske, wobei die Halterung (111) gegenüber dem Trägerelement (107) angeordnet ist. Zwischen dem Grundkörper (105) und dem Trägerelement (107) liegt ein abgedichteter Hohlraum (113) vor, welcher mit einem Druck, insbesondere einem Unterdruck, beaufschlagbar ist, um eine ungewollte Bewegung des Trägerelements (107) aufgrund einer externen Krafteinwirkung zu verhindern.

POLISHING METHOD AND POLISHING APPARATUS

A polishing method capable of preventing damage to a substrate is disclosed. The polishing method includes inspecting a periphery of a substrate for an abnormal portion, polishing the substrate if the abnormal portion is not detected, and not polishing the substrate if the abnormal portion is detected. The abnormal portion of the substrate may be an foreign matter, such as an adhesive, attached to the periphery of the substrate. After polishing of the substrate, the periphery of the substrate may be inspected again for an abnormal portion.

Method and device for bonding of substrates

The invention relates to a device for bonding first substrates (2) to second substrates (2'), said device having the following features: a receptacle for receiving a carrier substrate (1), a placement means for placing a plurality of first substrates (2) on a substrate side (1s) of the carrier substrate (1) facing away from the receptacle and a fixing means for fixing each of the first substrates (2) on the substrate side (1s) to at least one fixing section (2a) of each first substrate (2). The invention furthermore relates to a method for bonding first substrates (2) to second substrates (2'), having the following steps, particularly the following order: placing a plurality of first substrates (2) on a substrate side (1s) of a carrier substrate (1) received on a receptacle and fixing each of the first substrates (2) on the substrate side (1s) to at least one fixing section (2a) of each first substrate (2).

Device and method for aligning substrates

Device for pressure maintenance and material return of SIP substrate

Chemical mechanical polishing apparatus and methods

Plasma processing apparatus and plasma processing method

Solar cell film material assembling device

Material overturning device, battery slice cutting device and series welding machine

Semiconductor wafer processing method

Substrate polishing method

Wafer processing method

Substrate holding device, substrate holding method, and method of manufacturing laminated glass

Processing device

Electric device of processing control of semiconductors

Electronic circuit substrate gluing procedure, uses conductive thermoplastic film heated and compressed between substrate and base

L'invention conceme un procédé de collage d'au moins un substrat (72) sur une semelle (74) d'un circuit électronique par un film thermoplastique conducteur chauffé et comprimé entre le substrat et la semelle par un dispositif de presse afin d'effectuer la mise en oeuvre du film thermoplastique et le collage du substrat sur la semelle. L'invention concerne aussi le dispositif de mise en oeuvre du procédé comportant un bâti (30), une plaque de répartition (44) pouvant se déplacer entres une première (42) et une seconde (40) faces fixes du bâti, une enceinte gonflable (32) placée entre la première (42) face fixe du bâti et la plaque de répartition (44) produisant l'écartement de la plaque de répartition (44) de la première face (42) fixe du bâti et la compression de l'élément de collage (76) entre le substrat (72) et la semelle (74) en contact avec la seconde face (40) fixe du bâti. Applications : collage rapide et économique des substrats des circuits électroniques.

PROCEEDED OF JOINING GAUGES IN THICKNESS BETWEEN AT LEAST TWO SUBSTRATES

MACHINE OF VACUUM DEPOSIT, ON A SUBSTRATE, MATERIALS IN THIN LAYERS, BY CATHODE SPUTTERING.

METHOD OF SEVERING A SEMICONDUCTOR WAFER

APPARATUS OF JOINING OF SUBSTRATE FOR a DISPLAY PANEL HAS Liquid crystals.

Appareil de collage de substrat pour un panneau d'affichage à cristaux liquides (LCD). L'appareil de collage de substrat qui colle un premier substrat et un second substrat en utilisant un procédé d'aération comporte une plaque de préhension inférieure qui retient par préhension le second substrat, et une plaque de préhension supérieure qui comporte une pluralité de blocs (933A, 933B). comportant chacun un trou d'aération principal (946), dans lequel la plaque de préhension supérieure retient par préhension le premier substrat conformément à une opération de préhension des blocs, et libère ultérieurement le premier substrat retenu par préhension de telle manière que le premier substrat tombe vers le second substrat. Appareil dans lequel des trous d'aération (946, 947a, 947b) sont répartis, permettant ainsi d'obtenir une augmentation d'uniformité de l'aération.

SYSTEM OF CONNECTION AND MANUFACTORING PROCESS Of a SEMICONDUCTOR SUBSTRATE

L'invention concerne un système qui superpose des premier et second substrats après que leurs surfaces ont été nettoyées et/ou activées dans une chambre (201) dont l'intérieur est isolé de l'espace extérieur. L'état des surfaces des premier et second substrats est mesuré à l'aide d'un dispositif (218) et les surfaces des substrats sont nettoyées d'après le résultat de cette mesure, avant que les substrats soient superposés et liés. Domaine d'application : Fabrication de substrats du type silicium sur isolant, etc...

Substrate bonding apparatus

첩부 장치

... 기판이 파손될 우려를 회피하고, 기판과 지지체를 접착층을 개재하여 균일하게 첩부하는 것이 가능한 첩부 장치를 제공한다. 첩부 장치 (1) 는 세라믹스로 이루어지는 재치 플레이트 (12) 및 압압 플레이트 (22) 를 구비하고 있다. 상기 재치 플레이트 (12) 및 압압 플레이트 (22) 는 비압압시의 평면도가 1.0 ㎛ 이하이다.

APPARATUS FOR FABRICATING BONDED SUBSTRATE AND METHOD FOR BODING SUBSTRATE

BONDING APPARATUS, BONDING SYSTEM AND BONDING METHOD

유지 부재 관리 장치, 적층 반도체 제조 장치, 및 유지 부재 관리 방법

... 반도체 기판을 유지하는 유지 부재의 관리를 높은 효율로 실시한다. 복수의 반도체 기판을 접합함으로써 적층 반도체 장치를 제조하는 제조 장치에 있어서 반도체 기판을 유지하는 기판 유지 부재를 관리하는 유지 부재 관리 장치로서, 상기 기판 유지 부재를 식별하는 식별 정보에 대응시켜 상기 기판 유지 부재의 사용 이력을 격납하는 이력 격납부와, 상기 이력 격납부에 격납된 상기 사용 이력에 기초하여, 사용을 중지해야 할 상기 기판 유지 부재의 식별 정보를 특정하여 출력하는 유지 부재 특정부를 구비하는 유지 부재 관리 장치가 제공된다.

A METHOD FOR MANUFACTURING A SEGMENT FROM AN OBJECT

DICING SHEET, MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS

기판 처리 장치 및 기판 처리 방법

... 기판 처리 장치는 웨이퍼에 있어서의 서포트 플레이트가 첩부되어 있는 면과는 반대측인 피지지면의 내주부를 지지하는 지지부에 의해 지지된 적층체를 감압 환경하에서 반송하는 반송 유닛을 구비하고 있다.

ENERGY-BEAM-CURABLE THERMAL-RELEASABLE PRESSURE-SENSITIVE ADHESIVE SHEET AND METHOD FOR PRODUCING CUT PIECES USING THE SAME

Bonding unit control unit and multi-layer bonding method

A multi-layer bonding method of the present invention includes: forming a first bonded substrate by bonding a first substrate and an intermediate substrate in a bonding chamber; conveying a second substrate inside said bonding chamber when said first bonded substrate is arranged inside said bonding chamber; and forming a second bonded substrate by bonding said first bonded substrate and said second substrate in said bonding chamber. According to such a multi-layer bonding method, the upper-side substrate can be bonded with an intermediate substrate and then a first bonded substrate is bonded with a lower-side substrate without taking out the first bonded substrate from the bonding chamber. For this reason, a second bonded substrate can be produced at high speed and at a low cost.

Method for molecular adhesion bonding at low pressure

The present invention relates to a method for molecular adhesion bonding between at least a first wafer and a second wafer involving aligning the first and second wafers, placing the first and second wafers in an environment having a first pressure (P 1 ) greater than a predetermined threshold pressure; bringing the first wafer and the second wafer into alignment and contact; and initiating the propagation of a bonding wave between the first and second wafer after the wafers are aligned and in contact by reducing the pressure within the environment to a second pressure (P 2 ) below the threshold pressure. The invention also relates to the three-dimensional composite structure that is obtained by the described method of adhesion bonding.

Laser processing method and laser processing apparatus

The present disclosure relates to laser processing and a laser processing apparatus for processing materials using laser. Processing performed after loading a wafer on a work stage and a laser processing apparatus for implementing such processing, among others, are disclosed. The laser processing includes loading a wafer on a work stage; determining the number of chips formed on the wafer loaded on the work stage, performing chip defect inspection and aligning the wafer while moving the work stage; measuring a height of a surface of the wafer loaded on the work stage using a displacement sensor; monitoring output power of a processing laser using a power meter; and shifting the work stage while irradiating a laser beam on the wafer to process the wafer.

Cutting and clamping device

A cutting and clamping device includes an electrical control box. A base board is mounted atop the electrical control box and includes slide rails and a slide block. A supply mechanism is mounted to the base board for supplying an un-processed part strip. A conveyance mechanism is mounted to the slide block and has one end adjacent to the supply mechanism. A forwarding mechanism is mounted on the conveyance mechanism and includes a sharp tip, which is releasably insertable into positioning holes defined in the part strip. A cutting mechanism is mounted to the slide block and is connected to an opposite end of the conveyance mechanism. The cutting mechanism includes a cutting blade assembly and defines a cutting zone into which the cutting blade assembly is extendable. A clamping and retaining mechanism includes a first clamp assembly, a second clamp assembly, and a retaining assembly.

Apparatus for laminating a film on a wafer

An apparatus for laminating a film on a wafer includes a cutting mechanism and a laminating mechanism. The cutting mechanism has a cutting device disposed thereon for pre-cutting a dry film. The cutting mechanism has a supporter disposed adjacent to the cutting device for positioning a wafer. The cutting mechanism has a suction member disposed and corresponding to the cutting device for sucking the cut dry film to allow the cutting device pre-cutting the dry film and moving the cut dry film to the supporter. The laminating mechanism has a first lower member provided for positioning the wafer and a first upper member disposed above the first lower member for laminating the cut dry film with electrically heating to adhere the cut dry film on the wafer.

Bonding apparatus and bonding method

A bonding apparatus has an upper chuck and a lower chuck for holding wafers. The upper chuck is configured such that the center portion is bent to be convex when pressurized with a predetermined pressure. On the bottom surface of the lower chuck, there is an insulating ring formed of a combination of a plurality of insulating members to support the periphery of the lower chuck. The bottom surface of the insulating ring is supported by a support ring formed of a combination of a plurality of supporting members. The supporting members and the lower chuck are fixed by a bolt provided for each of the supporting members. The bolt is inserted through a through hole and a through hole which are formed in the insulating members and the supporting members, respectively, the through holes having a diameter larger than a diameter of the bolt.

Method and Apparatus for Forming a Thin Lamina

A method for producing a lamina from a donor body includes implanting the donor body with an ion dosage and separably contacting the donor body with a susceptor assembly, where the donor body and the susceptor assembly are in direct contact. A lamina is exfoliated from the donor body, and a deforming force is applied to the lamina or to the donor body to separate the lamina from the donor body.

Systems and Methods For Ultrasonically Cleaving A Bonded Wafer Pair

Systems and methods for the ultrasonic cleaving of bonded wafer pairs are described. The system includes a tank for containing a volume of liquid, a wafer boat having a recess formed therein for receiving the bonded wafer pair. The recess has a pair of opposing, spaced-apart sidewalls disposed at an angle from a vertical axis. An ultrasonic agitator is configured to ultrasonically agitate the volume of liquid. The ultrasonic agitation of the volume of liquid results in the cleaving of the bonded wafer pair.

Method for releasing a thin semiconductor substrate from a reusable template

The present disclosure relates to methods and apparatuses for releasing a thin semiconductor substrate from a reusable template. The method involves forming a mechanically weak layer conformally on a semiconductor template. Then forming a thin semiconductor substrate conformally on the mechanically weak layer. The thin semiconductor substrate, the mechanically weak layer and the template forming a wafer. Then defining the border of the thin-film semiconductor substrate to be released by exposing the peripheral of the mechanically weak layer. Then releasing the thin-film semiconductor substrate by applying a controlled air flow parallel to said mechanically weak layer wherein the controlled air flow separates the thin semiconductor substrate and template according to lifting forces.

Substrate loader and unloader having an air bearing support

A substrate separation chuck adapted to separate a substrate from an adhering surface. The substrate separation chuck has a support adapted to support the adhering surface. An air bearing surface is adapted to support the substrate, the air bearing surface axially moveable relative to the support. The air bearing surface has a first position adjacent the substrate with the substrate coupled to the adhering surface. The air bearing surface is moveable from the first position to a second position separating the substrate from the adhering surface without contact between the substrate and the air bearing surface.

Use of megasonic energy to assist edge bond removal in a zonal temporary bonding process

New methods of weakening the bonds between a bonded pair of wafers or substrates are provided. The substrates are preferably bonded at their outer peripheries. When it is desired to separate the substrates, they are contacted with a solvent system suitable for weakening, softening, and/or dissolving the bonding composition at their outer peripheries. Megasonic energy is simultaneously directed at the substrates (and preferably the bonding composition itself), so as to increase solvent penetration into the composition, thus decreasing the time needed for substrate separation and increasing throughput.

Manufacturing means and process

A production device ( 2 ) and a method for forming multilayered ( 3, 4, 5, 6, 7 ) modules, in particular solar modules ( 1 ), which have at least one translucent sheet-like layer ( 3, 6 ) and at least one solar- or light-active element is provided. The production device ( 2 ) forms the layer structure and has an applicator ( 33 ) for a connecting layer ( 5, 7 ) for the aforementioned layers ( 3, 4, 6 ). Furthermore, the device has a controllable curve(arch)-forming device ( 17 ) for bending and rolling a sheet-like layer ( 3, 6 ) while the layers are being applied.

Ablation method for die attach film

An ablation method of applying a laser beam to a die attach film to perform ablation. The ablation method includes a protective film forming step of applying a liquid resin containing a fine powder of oxide having absorptivity to the wavelength of the laser beam to at least a subject area of the die attach film to be ablated, thereby forming a protective film containing the fine powder on at least the subject area of the die attach film, and a laser processing step of applying the laser beam to the subject area coated with the protective film, thereby performing ablation through the protective film to the subject area of the die attach film after performing the protective film forming step.

Methods and systems for laser processing of coated substrates

Examples of methods and systems for laser processing of materials are disclosed. Methods and systems for singulation of a wafer comprising a coated substrate can utilize a laser outputting light that has a wavelength that is transparent to the wafer substrate but which may not be transparent to the coating layer(s). Using techniques for managing fluence and focal condition of the laser beam, the coating layer(s) and the substrate material can be processed through ablation and internal modification, respectively. The internal modification can result in die separation.

Design system for semiconductor device, method for manufacturing semiconductor device, semiconductor device and method for bonding substrates

The terminals that oppose each other when substrates are bonded are designed to be reliably joined. Comprised in a semiconductor device design system are a numerical value acquiring part, which acquires the respective numerical values of a plurality of calculation parameters, a junction estimating part, which, in the case in which a plurality of substrates has been pressed at a prescribed pressure so that the bump front end faces come into contact, estimates whether or not the respective mutually opposing bumps will be joined based on the respective numerical values of the calculation parameters acquired by the numerical value acquiring part, and a change processing part, which, in the case in which it has been estimated by the junction estimating part that any of the bumps will not be joined, gives a warning or performs processing so as to change the numerical value of at least one calculation parameter among the plurality of calculation parameters.

Semiconductor equipment

Semiconductor equipment is provided to include a reaction chamber, a movable frame, and at least one cleaning brush head. The cleaning brush head is configured to operate on at least one dirty portion to be cleaned within the reaction chamber. The movable frame is disposed within the reaction chamber. The movable frame is capable of carrying a susceptor. The cleaning brush head is capable of touching the dirty portion. The cleaning brush head is capable of moving relative to the dirty portion for removing the residue which is attached to the portion to be cleaned.

Apparatus and method of separating wafer from carrier

A method of separating a wafer from a carrier includes placing a wafer assembly on a platform. The wafer assembly includes the wafer, the carrier, and a layer of wax between the wafer and the carrier. A wafer frame is mounted on the wafer of the wafer assembly. The layer of wax is softened. The wafer and the wafer frame mounted thereon are separated, by a first robot arm, from the carrier.

Peeling system, peeling method, and computer storage medium

A peeling system includes: a carry-in/carry-out station that loads/unloads substrates to be processed, support substrates, or stacked substrates in which these are made to adhere; a peeling process station that carries out prescribed processing on substrates to be processed, support substrates and stacked substrates; and a transport station provided between the carry-in/carry-out station and the peeling process station. The peeling process station has a peeling device that peels the stacked substrates, a first washing apparatus that washes peeled substrates to be processed, and a second washing apparatus that washes the peeled support substrates. The pressure inside the transport station is a positive pressure in relation to the pressure inside the peeling device, the pressure inside the first washing apparatus, and the pressure inside the second washing apparatus. The pressure inside a transport apparatus is a positive pressure in relation to the pressure inside the peeling device and the pressure inside the first washing apparatus.

Endpointing detection for chemical mechanical polishing based on spectrometry

Methods and apparatus for spectrum-based endpointing. An endpointing method includes selecting a reference spectrum. The reference spectrum is a spectrum of white light reflected from a film of interest on a first substrate and has a thickness greater than a target thickness. The reference spectrum is empirically selected for particular spectrum-based endpoint determination logic so that the target thickness is achieved when endpoint is called by applying the particular spectrum-based endpoint logic. The method includes obtaining a current spectrum. The current spectrum is a spectrum of white light reflected from a film of interest on a second substrate when the film of interest is being subjected to a polishing step and has a current thickness that is greater than the target thickness. The method includes determining, for the second substrate, when an endpoint of the polishing step has been achieved. The determining is based on the reference and current spectra.

Manufacturing apparatus and method of organic light emitting diode display

A manufacturing apparatus for an organic light emitting diode (OLED) display includes a stage mounted with an organic light emitting display panel and a supporting substrate of the organic light emitting display panel, a porous sheet attachable to and detachable from a thin film encapsulation layer of the organic light emitting display panel, and a porous sheet attaching/detaching apparatus configured to be separable from the organic light emitting display panel and to attach and detach the porous sheet to and from the thin film encapsulation layer of the organic light emitting display panel. The porous sheet attaching/detaching apparatus is configured to remove an attaching/detaching gas from between the porous sheet and the thin film encapsulation layer to attach the porous sheet to the thin film encapsulation layer.

Nozzled device to align a substrate on a surface

A method system and device, to align a substrate on a surface, the device including a first intake and a second intake where the first intake is configured to accept a first fluid and the second intake is configured to accept a second fluid. The first fluid is channeled into the device to vertically move the device a distance, and the second fluid calibrated and channeled into the nozzle, the nozzle having a focusing outlet, and where the fluids are configured to exert a force to facilitate the alignment of the substrate on the surface.

Bendable carrier mount, device and method for releasing a carrier substrate

A flexible carrier mount for mounting of a carrier substrate when the carrier substrate is detached from a product substrate, detachment means being provided for debonding the product substrate with bending of the carrier substrate. A device for detaching a carrier substrate from one product substrate in one detachment direction having: a carrier mount flexible in the detachment direction for mounting the carrier substrate, a substrate mount for mounting the product substrate, and detachment means for debonding the carrier substrate from the product substrate with bending of the carrier substrate. A method for detaching a carrier substrate from a product substrate in one detachment direction with the steps: mounting the product substrate with a substrate mount and mounting the carrier substrate with a carrier mount flexible in the detachment direction and debonding the carrier substrate from the product substrate with bending of the product substrate.

Bonding-substrate fabrication method, bonding substrate, substrate bonding method, bonding-substrate fabrication apparatus, and substrate assembly

[Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.

Lamination method and lamination system

To provide a lamination method and a lamination system capable of excellently laminating a film-type laminate without damage even though the semiconductor is a brittle lamination target such as a foil-type semiconductor or a semiconductor made of highly brittle material. In a lamination method for laminating a film-type laminate to a brittle lamination target by overlapping the brittle lamination target and the film-type laminate and heating and pressing the brittle lamination target and the film-type laminate, with respect to the brittle lamination target mounted on a mount member and carried into a lamination device, an eleastic film member is expanded into a vacuum chamber of the lamination device from the above to press and laminate the brittle lamination target and the film-type laminate.

Apparatus for Cleaning a Semiconductor Substrate

An apparatus for processing a substrate is provided. The apparatus includes a solid material having a support side and a contact side. The contact side has an outer surface, and the outer surface is configured to become softer relative to a remainder of the solid material when exposed to an activation solution. The apparatus includes a support structure configured to support the solid material from the support side of the solid material, such that the contact side of the solid material is oriented to face a surface of the substrate, when the substrate is present. Also provided is a gimbaled structure connected to the support structure. The gimbaled structure enabling the outer surface of the contact side to substantially align in a coplanar arrangement with the surface of the substrate, when the substrate is present. A force application structure is coupled to the gimbaled structure. The force application structure is configured for moving the solid material toward and away from the surface of the substrate, when the substrate is present, and further configured for applying a force that presses the outer surface of the solid material against the surface of the substrate, when the substrate is present. 1. An apparatus for processing a substrate , comprising:a solid material having a support side and a contact side, the contact side having an outer surface, the outer surface configured to become softer relative to a remainder of the solid material when exposed to an activation solution;a support structure configured to support the solid material from the support side of the solid material, such that the contact side of the solid material is oriented to face a surface of the substrate, when the substrate is present;a gimbaled structure connected to the support structure, the gimbaled structure enabling the outer surface of the contact side to substantially align in a coplanar arrangement with the surface of the substrate, when the substrate is present; anda force ...

Method for molecular adhesion bonding at low pressure

A method for bonding first and second wafers by molecular adhesion. The method includes placing the wafers in an environment having a first pressure (P1) greater than a predetermined threshold pressure above which initiation of bonding wave propagation is prevented, bringing the first wafer and the second wafer into alignment and contact, and spontaneously initiating the propagation of a bonding wave between the wafers after they are in contact solely by reducing the pressure within the environment to a second pressure (P2) below the threshold pressure.

Method for processing edge surface and edge surface processing apparatus

An aspect of the present embodiment, there is provided a method of fabricating a semiconductor device, including grinding a second surface of a wafer, the second surface opposite to a first surface of the wafer being stuck with a surface protection material, forming a protective film on the first surface, irradiating a portion including an outside edge of the wafer with laser light to remove the portion including the outside edge in a state that the wafer is rotating and an irradiation position of the laser light is approaching to a rotation axis of the wafer, an absorption ratio of the wafer to the laser light being higher than an absorption ratio of the surface protection material to the laser light, and removing the protective film.

Laser processing method and device

A laser processing method which can efficiently perform laser processing while minimizing the deviation of the converging point of a laser beam in end parts of an object to be processed is provided. This laser processing method comprises a preparatory step of holding a lens at an initial position set such that a converging point is located at a predetermined position within the object; a first processing step (S 11 and S 12 ) of emitting a first laser beam for processing while holding the lens at the initial position, and moving the lens and the object relative to each other along a main surface so as to form a modified region in one end part of a line to cut; and a second processing step (S 13 and S 14 ) of releasing the lens from being held at the initial position after forming the modified region in the one end part of the line to cut, and then moving the lens and the object relative to each other along the main surface while adjusting the gap between the lens and the main surface after the release, so as to form the modified region.

Low Oxide Trench Dishing Chemical Mechanical Polishing

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(−)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.

Method of Manufacturing a Semiconductor Device

A semiconductor device manufacturing method comprising the steps of providing a matrix substrate having a main surface with plural device areas formed thereon, fixing plural semiconductor chips to the plural device areas respectively, then sealing the plural semiconductor chips all together with resin to form a block sealing member, dividing the block sealing member and the matrix substrate for each of the device areas by dicing, thereafter rubbing a surface of each of the diced sealing member portions with a brush, then storing semiconductor devices formed by the dicing once into pockets respectively of a tray, and conveying the semiconductor devices each individually from the tray. Since the substrate dividing work after block molding is performed by dicing while vacuum-chucking the surface of the block sealing member, the substrate division can be done without imposing any stress on an external terminal mounting surface of the matrix substrate.

COMPLIANT POLISHING PAD AND POLISHING MODULE

A polishing device includes a housing, a flexible base coupled to the housing, and a contact region disposed on a first side of the flexible base, wherein the flexible base expands and contracts based on pressure contained within the housing and a second side of the flexible base to form a contact area on the first side that is less than a surface area of the flexible base. 1. A polishing device , comprising:a housing;a flexible base coupled to the housing; anda contact region disposed on a first side of the flexible base, wherein the flexible base expands and contracts based on pressure contained within the housing and a second side of the flexible base to form a contact area on the first side that is less than a surface area of the flexible base.2. The device of claim 1 , wherein the contact region is raised from the flexible base.3. The device of claim 1 , wherein the contact region is positioned on the base along an arc segment.4. The device of claim 1 , wherein the contact region comprises a plurality of contact pads.5. The device of claim 1 , wherein the flexible base comprises a raised lip at a perimeter thereof.6. The device of claim 1 , wherein the contact area is adjustable.7. The device of claim 6 , wherein the adjustment of the contact area is based on a process recipe.8. The device of claim 1 , wherein the contact region is arc-shaped.9. The device of claim 1 , wherein the contact region is circular.10. A polishing module claim 1 , comprising:a chuck having a substrate receiving surface and a perimeter; anda polishing pad positioned about the perimeter of the chuck, the polishing pad comprising a contact region positioned about a center of a flexible base, wherein the polishing pad is inflatable by pressure application to a backside of the flexible base.11. The module of claim 10 , wherein the contact region is detachably coupled to the flexible base.12. The module of claim 10 , wherein the contact region is arc-shaped.13. The module of claim 10 , ...

DEVICES FOR METHODOLOGIES RELATED TO WAFER CARRIERS

Disclosed are systems, devices and methodologies for handling wafers in wafer processing operations through use of wafer carriers. In an example situation, a wafer carrier can be configured as a plate to allow bonding of a wafer thereto to provide support for the wafer during some processing operations. Upon completion of such operations, the processed wafer can be separated from the support plate so as to allow further processing. Various devices and methodologies related to such wafer carriers for efficient handling of wafers are disclosed. 1. An apparatus to separate a semiconductor wafer from a disk , the apparatus comprising:a bonded assembly including a semiconductor wafer, an adhesive layer, and an optically transparent disk dimensioned to receive the semiconductor wafer and bonded to the semiconductor wafer by the adhesive layer to provide support for the semiconductor wafer, the optically transparent defining a circular perimeter with first and second corner profiles, at least one of the first and second corner profiles having a chamfered profile to reduce likelihood of chipping; anda debonding chuck including a first surface that defines a recess, a second surface disposed in the recess and separated from the first surface to define a depth of the recess, the second surface defining at least one suction opening configured to facilitate delivery of a suction force to the semiconductor wafer via the recess, and a side wall that joins the first and second surfaces, the side wall defining at least one opening dimensioned to limit a pressure different between the recess and outside of the recess during the application of the suction force.2. The apparatus of wherein a diameter of the optically transparent disk is larger than a diameter of the semiconductor wafer by approximately 3% or more.3. The apparatus of wherein the chamfered profile is substantially symmetrical with respect to the first and second corner profiles.4. The apparatus of wherein both of the ...

SEGMENTED EDGE PROTECTION SHIELD

A segmented edge protection shield for plasma dicing a wafer. The segmented edge protection shield includes an outer structure and a plurality of plasma shield edge segments. The outer structure defines an interior annular edge configured to correspond to the circumferential edge of the wafer. Each one of the plurality of plasma shield edge segments is defined by an inner edge and side edges. The inner edge is interior to and concentric to the annular edge of the outer structure. The side edges extend between the inner edge and the annular edge. 1. A method of plasma dicing a wafer , comprising:providing a wafer that has been patterned to expose kerf lines on a surface of the wafer;providing a segmented edge protection shield above the surface of the wafer; andplasma etching the surface of the wafer through the segmented edge protection shield to singulate die within the kerf lines and to singulate a plurality of wafer edge areas that are spaced apart around a circumferential edge of the wafer.2. The method of claim 1 , wherein singulating the plurality of wafer edge areas comprises etching interconnected kerf lines of partial die that are adjacent to and exterior to a plurality of edge segments claim 1 , wherein each one of the plurality of edge segments is defined by an inner edge that is concentric to the circumferential edge of the wafer and side edges that extend between the inner edge and the circumferential edge of the wafer.3. The method of claim 2 , wherein singulating the plurality of wafer edge areas comprises the inner edge of the plurality of edge segments having a length that is greater than a maximum distance between adjacent kerf lines.4. The method of claim 2 , wherein singulating the plurality of wafer edge areas comprises the side edges of the plurality of edge segments having a same length.5. The method of claim 2 , wherein singulating die within the kerf lines comprises singulating die between the side edges of adjacent ones of the plurality of ...

Surface Treatment in a Chemical Mechanical Process

A method is presented that includes the step of polishing a wafer positioned on a platen. After polishing the wafer, the method includes initiating a high pressure rinse on the wafer while the wafer is positioned on the platen, wherein the high pressure rinse includes a hydrophilic solution. The wafer is soaked in the hydrophilic solution, and after soaking the wafer, the wafer is cleaned.

Multi-axis flattening tool and method

A multi-axis flattening tool and method are described. In an example, the multi-axis flattening tool includes a support structure to constrain a bowed wafer along a support perimeter, and a pair of flattening structures independently movable relative to the support structure. For example, a first flattening structure may grip the wafer within the support perimeter and move axially relative to the support structure to bend the wafer about a first plane, and a second flattening structure may grip the wafer within the support perimeter and move axially relative to the support structure to bend the wafer about a second plane orthogonal to the first plane. The multi-axis bending of the wafer may flatten the wafer.

WAFER TO WAFER BONDING METHODS AND WAFER TO WAFER BONDING APPARATUSES

In a wafer to wafer bonding method, a first wafer is vacuum suctions on a first surface of a lower stage and a second wafer is vacuum suctioned on a second surface of an upper stage. Pressure is applied to a middle portion of the first wafer by a lower push rod and pressure is applied to a middle portion of the second wafer by an upper push rod. Bonding of the first and second wafers propagates radially outwards. A bonding propagation position of the first and second wafers is detected. A ratio of protruding lengths of the lower push rod and the upper push rod is changed according to the bonding propagation position. 1. A wafer bonding apparatus , comprising:a vacuum pump;a lower stage having a first surface and including a plurality of first suction holes in the first surface, wherein the lower stage is configured to vacuum suction a first wafer on the first surface based on a vacuum pressure being supplied to the plurality of first suction holes from the vacuum pump;an upper stage having a second surface and including a plurality of second suction holes in the second surface, wherein the upper stage is configured to vacuum suction a second wafer on the second surface based on the vacuum pressure being supplied to the plurality of second suction holes from the vacuum pump;a lower push rod movable through a first center hole in a middle portion of the lower stage to contact and apply pressure to a middle region of the first wafer that overlaps with the first center hole;an upper push rod movable through a second center hole in a middle portion of the upper stage to contact and apply pressure to a middle region of the second wafer that overlaps with the second center hole;a position detection sensor configured to generate wafer position information indicating a bonding propagation position of the first wafer and the second wafer based on detecting at least one of the first wafer or the second wafer through a detection hole in at least one stage of the lower stage or ...

LASER MACHINING DEVICE AND LASER MACHINING METHOD

Provided are a laser machining device and a laser machining method capable of stably operating an autofocus function without causing an unfavorable state such as an overshoot etc. A laser machining device and a laser machining method of the present invention performs a normal AF (autofocus) control when a scan position of the machining laser light and the detecting laser light is located in a work central portion, and performs a slow-tracking AF (autofocus) control with a trackability to a displacement of a main surface of a work reduced to be lower than a trackability of the normal AF control when the scan position of the machining laser light and the detecting laser light is located in a work end portion. 1. A laser machining device which condenses a machining laser light inside a work to form a modified region inside the work along a planned dividing line , the laser machining device comprising:a condensing lens configured to condense the machining laser light and a detecting laser light toward the work;a scanner configured to relatively move the condensing lens and the work in a direction orthogonal to an optical axis direction of the condensing lens, to scan the machining laser light and the detecting laser light over the work;an adjuster configured to adjust a distance between the condensing lens and the work;a detector configured to detect a reflected light to output a detection signal according to a height of a main surface of the work, the reflected light being the detecting laser light reflected on the main surface of the work;a first controller configured to control, based on the detection signal output by the detector, the adjuster so as to cause a light condensing point of the detecting laser light to track a displacement of the main surface of the work, in case where a scan position of the machining laser light and the detecting laser light is in a central portion of the work; anda second controller configured to control, based on the detection signal ...

Bonding apparatus and bonding method

[Solution] A bonding device 10 for thermally bonding an electronic component 100 to a substrate 110 or to another electronic component via an adhesive material 112, the bonding device being provided with: a bonding tool 40 comprising a bonding distal-end portion 42 which includes a bonding surface 44 and tapered side surfaces 46 formed in a tapering shape becoming narrower toward the bonding surface 44, the bonding surface 44 having a first suction hole 50 for suction-attaching the electronic component 100 via an individual piece of a porous sheet 130, the tapered side surfaces 46 having second suction holes 52, 54 for suction-attaching the porous sheet 130; and a bonding control unit 30 which controls the first suction hole 50 and the second suction holes 52, 54 independently from each other.

Apparatus and Method for Processing a Semiconductor Substrate

A method includes placing a semiconductor substrate on a first curved surface of a first bending tool, using a second bending tool with a second surface to apply pressure to the semiconductor substrate, thereby pressing the semiconductor substrate onto the first curved surface and bending the semiconductor substrate, and removing the bended semiconductor substrate from the first bending tool.

WAFER PART AND CHIP PACKAGING METHOD

A wafer part and a chip packaging method are provided. The wafer part is obtained by processing a round wafer. A profile of the wafer part is an inscribed closed pattern of a profile of the round wafer, and area of the inscribed closed pattern is larger than area of an inscribed square of the profile of the round wafer; the inscribed closed pattern includes an even number of straight edges, and each one of straight edges is parallel to another of the straight edges and has a length equal to that of the another of the straight edges. The chip packaging method includes: fixing the plurality of wafer parts on a first panel level substrate and forming a packaging structure on each chip; wherein the plurality of wafer parts are arranged closely on the first panel level substrate without being overlapped with each other. 1. A wafer part which is obtained by processing a round wafer , a profile of the wafer part being an inscribed closed pattern of a profile of the round wafer , wherein area of the inscribed closed pattern is larger than area of an inscribed square of the profile of the round wafer; and whereinthe inscribed closed pattern comprises an even number of straight edges, and each one of straight edges is parallel to another of the straight edges and has a length equal to that of the another of the straight edges.2. The wafer part according to claim 1 ,wherein the profile of the wafer part is an inscribed polygon of the profile of the round wafer.3. The wafer part according to claim 2 ,wherein the profile of the wafer part is an inscribed regular hexagon of the profile of the round wafer.4. The wafer part according to claim 2 ,wherein the profile of the wafer part is an inscribed octagon of the profile of the round wafer.5. The wafer part according to claim 1 ,wherein the inscribed closed pattern further comprises an arced corner between two adjacent straight edges, and the arced corner is arc segment of the profile of the round wafer.6. The wafer part according ...

SUBSTRATE PROCESSING METHOD

There is provided a processing method for a package substrate having a plurality of division lines formed on the front side. The processing method includes the steps of holding the back side of the package substrate by using a holding tape and fully cutting the package substrate along the division lines to such a depth corresponding to the middle of the thickness of the holding tape by using a profile grinding tool, thereby dividing the package substrate into individual semiconductor packages. The profile grinding tool has a plurality of projections for cutting the package substrate respectively along the plural division lines. Each projection has an inclined side surface. 1. A substrate processing method for dividing a substrate along a plurality of division lines formed on the front side of said substrate to obtain individual chips and simultaneously providing a desired shape on each chip , said substrate processing method comprising:a holding step of holding the back side of said substrate by using a holding tape or a holding jig; anda dividing step of fully cutting said substrate along said division lines to such a depth corresponding to the middle of the thickness of said holding tape or said holding jig by using a shaped abrasive member after performing said holding step, thereby dividing said substrate into said individual chips;said shaped abrasive member having a projection for cutting said substrate, said projection having an inclined side surface or a vertical side surface with a step portion;said dividing step including the steps of cutting said substrate along each division line by using said projection to thereby divide said substrate into said individual chips and simultaneously forming an inclined side surface or a stepped side surface on each chip according to said inclined side surface or said vertical side surface with said step portion of said projection, wherein said inclined side surface or said stepped side surface on each chip is formed so ...

Workpiece grinding method

A workpiece grinding method includes a groove formation step, a groove removal step, and a full surface grinding step. In the groove formation step, the workpiece is ground by performing grinding feed of a grinding unit while rotating a spindle without rotation of a chuck table, so that an arcuate groove is formed with a depth not reaching a finish thickness on a side of a back surface of the workpiece. In the groove removal step, rotation of the chuck table is started with the spindle kept rotating, so that the groove is ground at side walls thereof and is removed from the workpiece. In the full surface grinding step, grinding feed of the grinding unit is performed while the spindle and chuck table are rotated, so that the workpiece is ground in an entirety thereof on the side of the back surface until the workpiece has the finish thickness.

Protective component forming apparatus

A protective component forming apparatus includes a chuck table, a resin supply unit having a pump and a pipe that supply a liquid resin from a tank to a resin sheet held by the chuck table, a pressing unit that presses a workpiece against the liquid resin supplied to the resin sheet held by the chuck table, a curing unit that irradiates the liquid resin pressed by the pressing unit with ultraviolet and cures the liquid resin, a resin inspecting part that senses the viscosity of the liquid resin, and an informing unit.

Workpiece management method and sheet cutting machine

A workpiece management method includes a frame unit forming step of forming a frame unit with a workpiece supported in an opening of an annular frame via a resin sheet, a printing step of, after performing the frame unit forming step, printing identification information of the workpiece on the resin sheet in an area between an outer periphery of the workpiece and an inner periphery of the annular frame, a processing step of processing the workpiece by a processing machine, a separation step of separating the processed workpiece from the resin sheet, and a storage step of storing the resin sheet from which the workpiece has been separated. A sheet cutting machine suitable for use in the workpiece management method is also disclosed.

LASER PROCESSING APPARATUS

A calculating section of a control unit calculates a vertical position Defocus for a condensing lens using a height value H of a modified layer in a wafer that is set by a setting section according to the equation (1) below. 1. A laser processing apparatus comprising:a processing unit for positioning a focused point of a laser beam that is transmittable through a workpiece and that is focused by a condensing lens, within the workpiece to cause the focused point to form a modified layer within the workpiece;a chuck table having a holding surface for holding the workpiece thereon;a processing feed unit for processing-feeding the chuck table and the processing unit relatively to each other in a direction parallel to the holding surface;lifting and lowering means for moving the condensing lens in a direction perpendicular to the holding surface; anda control unit, wherein a setting section for setting a height value from a lower surface of the workpiece at a predetermined vertical position from the lower surface of the workpiece in order to form the modified layer at the predetermined vertical position within the workpiece, and', {'br': None, 'i': b', 'a, 'Defocus=(thickness of the workpiece−height value−)/\u2003\u2003(1)'}, 'a calculating section for calculating a vertical position Defocus for the condensing lens according to the height value of the modified layer that is set by the setting section and the equation (1) below,'}], 'the control unit includes'}where “a” and “b” represent constants, and positions the condensing lens at at least two points at different heights, forming at least two modified layers at different depths, while lowering the focused point of the condensing lens stepwise from an upper surface of the wafer,', 'plots spots corresponding to the at least two modified layers in a coordinate system having a vertical axis representing distance Depth from the modified layer to the upper surface of the workpiece and a horizontal axis representing vertical ...

LASER PROCESSING APPARATUS AND LASER PROCESSING METHOD

A laser processing method includes holding a single crystal silicon wafer as a workpiece, selecting a laser beam having a wavelength of 1950 nm or more in a transmission wavelength region to the single crystal silicon wafer, and applying the laser beam to the single crystal silicon wafer along a predetermined area with the focal point of the laser beam set inside the wafer, thereby forming a plurality of shield tunnels arranged along the predetermined area. Each shield tunnel is composed of a fine hole and an amorphous region formed around the fine hole for shielding the fine hole. The fine hole extends from a beam applied surface of the wafer where the laser beam is applied to the other surface opposite to the beam applied surface. 1. A laser processing apparatus comprising:a chuck table for holding a workpiece, said workpiece including a single crystal silicon wafer; anda laser beam applying unit including focusing means having a focusing lens for applying a laser beam to said workpiece held on said chuck table to thereby process said workpiece;said laser beam applying unit further including a laser oscillator for oscillating a pulsed laser beam having a wavelength of 1950 nm or more in a transmission wavelength region to said single crystal silicon wafer as said laser beam.2. The laser processing apparatus according to claim 1 , wherein the numerical aperture of said focusing lens is set so that the value obtained by dividing the numerical aperture of said focusing lens by the refractive index of single crystal silicon falls within the range of 0.05 to 0.2.3. A laser processing method using a laser processing apparatus including a chuck table for holding a workpiece and a laser beam applying unit including focusing means having a focusing lens for applying a laser beam to said workpiece held on said chuck table to thereby process said workpiece claim 1 , said laser processing method comprising:a single crystal silicon wafer selecting step of selecting a single ...

BLADE MOUNTING AND DISMOUNTING JIG, BLADE MOUNTING AND DISMOUNTING METHOD, BLADE EXTRACTING METHOD, AND CUTTING APPARATUS

A blade mounting and dismounting jig is provided for mounting a blade on and dismounting a blade from a flange of a cutting apparatus which includes a boss, a blade mount for mounting the blade fitted thereover, the flange having an annular end face for supporting the blade thereon and being fixed to a distal end of a spindle, and a holder that cooperates with the flange in gripping and securing the blade in position. The blade mounting and dismounting jig includes a cylindrical jig body, a grip coupled to the jig body and having a diameter larger than the jig body, a plurality of first air ejection ports defined in a distal end portion of the jig body, a plurality of second air ejection ports defined in the jig body at a juncture between the jig body and the grip. 1. A blade mounting and dismounting jig for mounting a blade on and dismounting a blade from a flange of a cutting apparatus which includes at least a boss , a blade mount for mounting the blade fitted thereover , the flange having an annular end face for supporting the blade thereon and being fixed to a distal end of a spindle , and a holder that cooperates with the flange in gripping and securing the blade in position , said blade mounting and dismounting jig including:a cylindrical jig body having a recess defined in a distal end portion thereof, the distal end portion having a diameter same as that of said blade mount, said recess being receptive of said boss fitted therein;a grip coupled to said jig body and having a diameter larger than said jig body;a plurality of first air ejection ports defined in the distal end portion of the jig body;a plurality of second air ejection ports defined in the jig body at a juncture between said jig body and said grip;a first fluid communication route for bringing said first air ejection ports into fluid communication with an air source under control of a controller; anda second fluid communication route for bringing said second air ejection ports into fluid ...

MATERIAL PROCESSING APPARATUS AND OPERATING METHOD THEREOF

A material processing apparatus includes a processing chamber having an internal space, an external pressure source, a vacuum generator, a temperature regulator and a controller. The external pressure source is connected to the processing chamber for positive pressure action on the internal space. The vacuum generator is connected to the processing chamber for negative pressure action on the internal space. The temperature regulator is arranged in the processing chamber to adjust the temperature in the internal space. The controller is configured to control the external pressure source to increase the pressure in the processing chamber from a normal pressure to a first predetermined pressure, and configured to control the vacuum generator to reduce the pressure in the processing chamber to a second predetermined pressure less than the normal pressure after the pressure rises to the first predetermined pressure. An operating method of a material processing apparatus is also provided. 1. A material processing apparatus , comprising:a processing chamber, having an internal space;an external pressure source, connected to the processing chamber for positive pressure action on the internal space;a vacuum generator, connected to the processing chamber for negative pressure action on the internal space;a temperature regulator, arranged in the processing chamber and configured to adjust a temperature in the internal space; anda controller, configured to control the external pressure source to increase a pressure in the processing chamber from a normal pressure to a first predetermined pressure, and configured to control the vacuum generator to, after the pressure in the processing chamber rises to the first predetermined pressure, reduce the pressure in the processing chamber to a second predetermined pressure less than the normal pressure.2. The material processing apparatus according to claim 1 , further comprising at least one motor arranged outside the processing chamber ...

FILM FORMING SYSTEM

A film forming system includes: a treatment station that performs a predetermined treatment on a substrate; and a transfer-in/out station configured to retain a plurality of substrates and transfer the substrates in/out from/to the treatment station. The treatment station includes: a coating apparatus that applies a coating solution onto a front surface of the substrate to form a containing film; a thermal treatment apparatus that thermally treats the substrate on which the coating film has been formed; a grinding apparatus that grinds the coating film on the front surface of the substrate which has been thermally treated; a cleaning apparatus that cleans the substrate whose coating film has been ground; and a transfer region for transferring the substrate. 1. A film forming system for forming a coating film on a substrate having a plurality of circuits formed on a front surface thereof , said system comprising:a treatment station that performs a predetermined treatment on the substrate; anda transfer-in/out station configured to retain a plurality of substrates and transfer the substrates in/out from/to said treatment station, a coating apparatus that applies a coating solution onto the front surface of the substrate to form a containing film;', 'a thermal treatment apparatus that thermally treats the substrate on which the coating film has been formed;', 'a grinding apparatus that grinds the coating film on the front surface of the substrate which has been thermally treated;', 'a cleaning apparatus that cleans the substrate whose coating film has been ground; and', 'a transfer region for transferring the substrate to said coating apparatus, said thermal treatment apparatus, said grinding apparatus, and said cleaning apparatus., 'said treatment station comprising2. The film forming system according to claim 1 ,wherein the coating solution is a coating material for sealing the circuits.3. The film forming system according to claim 1 ,wherein said thermal treatment ...

In-Situ Acoustic Monitoring of Chemical Mechanical Polishing

A method of controlling chemical mechanical polishing includes polishing a substrate having a plurality of protrusions, monitoring the substrate during polishing with an in-situ monitoring system to generate a signal, the in-situ monitoring system including an acoustic sensor, a motor current sensor or a motor torque sensor, and detecting breakage of the protrusions based on the signal. 1. A method of controlling chemical mechanical polishing , comprising:polishing a substrate having a plurality of protrusions;during polishing, monitoring the substrate with an in-situ monitoring system to generate a signal, the in-situ monitoring system including an acoustic sensor, a motor current sensor or a motor torque sensor;detecting breakage of the protrusions based on the signal.2. The method of claim 1 , wherein detecting breakage comprises comparing a signal intensity to a threshold value.3. The method of claim 2 , comprising calculating the signal intensity from a root mean square of the signal4. The method of claim 2 , comprising performing a Fast Fourier Transform on the signal to generate a transformed signal claim 2 , and calculating the signal intensity based on an intensity of a frequency band of the transformed signal.5. The method of claim 2 , comprising performing a wavelet packet transform on the signal to generate a plurality of signal components claim 2 , and calculating the signal intensity based on an intensity of a signal component.6. The method of claim 1 , comprising halting polishing upon detecting breakage of the protrusions.7. The method of claim 1 , wherein detecting breakage of the protrusions triggers reducing a pressure and/or a relative speed of polishing for a subsequent substrate.8. The method of claim 1 , wherein the protrusions comprise stubs of through silicon vias in the substrate.9. A chemical mechanical polishing apparatus claim 1 , comprising:a platen to support a polishing pad;a carrier head to hold a substrate in contact with the ...

SURFACE PASSIVATION OF SUBSTRATE BY MECHANICALLY DAMAGING SURFACE LAYER

An apparatus comprises a substrate having a trap rich surface layer produced by mechanically grinding a surface of the substrate, an electrical contact disposed on the trap rich surface layer of the substrate, and an electronic device electrically connected to the electrical contact. 1. An apparatus , comprising:a substrate having a trap rich surface layer produced by mechanically grinding a surface of the substrate;an electrical contact disposed on the trap rich surface layer of the substrate; andan electronic device electrically connected to the electrical contact.2. The apparatus of claim 1 , further comprising a via extending through the substrate claim 1 , wherein the electronic device is electrically connected to the electrical contact through the via.3. The apparatus of claim 2 , wherein the substrate forms a lid over the electronic device claim 2 , and the electronic device is disposed on an additional substrate bonded to the substrate.4. The apparatus of claim 3 , further comprising:an additional trap rich surface layer produced by mechanically grinding a surface of the additional substrate; andan additional electrical contact disposed between the electronic device and the additional trap rich surface layer.5. The apparatus of claim 2 , wherein the electronic device is disposed on a first side of the substrate and the electrical contact is disposed on a second side of the substrate opposite the first side claim 2 , wherein the via extends between the first and second sides of the substrate.6. The apparatus of claim 5 , further comprising:an additional trap rich surface layer produced by mechanically grinding the first side of the substrate; andan additional electrical contact disposed between the electronic device and the additional trap rich surface layer.7. The apparatus of claim 1 , wherein the electronic device is disposed on the substrate over the electrical contact.8. The apparatus of claim 7 , further comprising a lid formed over the electronic ...

EXPANDING METHOD AND EXPANDING APPARATUS

An expanding method includes a plate cooling step of cooing a plate of a cooling/heating unit, which includes the plate for contact with a workpiece and a Peltier element for cooling or heating the plate, a workpiece cooling step of bringing the plate into contact with the workpiece through the expansion sheet to cool the workpiece, after the plate cooling step is performed, an expanding step of expanding the expansion sheet, after the workpiece cooling step is performed, a plate heating step of heating the plate, after the expanding step is performed, and a workpiece heating step of bringing the plate into contact with the workpiece through the expansion sheet to heat the workpiece, after the plate heating step is performed. 1expanding means expanding the expansion sheet;cooling/heating means that includes a plate having a contact surface for contact with the workpiece and brought into contact with the workpiece through the expansion sheet, and a Peltier element for cooling or heating the plate; andpolarity change-over means changing over the polarity of a current passed to the Peltier element.. An expanding apparatus for expanding an expansion sheet to which a workpiece including at least a ductile material is adhered, the expanding apparatus comprising: This is a divisional application of application Ser. No. 16/376,391 filed Apr. 5, 2019, which claims the benefit of Japanese Patent Application No. 2018-077120, filed on Apr. 12, 2018.The present invention relates to an expanding method and an expanding apparatus.At the time of dividing a die attach film (DAF) by expanding an expansion sheet, the expansion is conducted while cooling the workpiece in a cooling chamber, for enhancing the dividability of the DAF which is a ductile material (see, for example, Japanese Patent Laid-Open No. 2009-64905 and Japanese Patent Laid-Open No. 2007-189057).However, the dividing method described in Japanese Patent Laid-Open No. 2009-64905 and Japanese Patent Laid-Open No. 2007- ...

APPARATUS, SYSTEM, AND METHOD FOR HANDLING ALIGNED WAFER PAIRS

An industrial-scale apparatus, system, and method for handling precisely aligned and centered semiconductor wafer pairs for wafer-to-wafer aligning and bonding applications includes an end effector having a frame member and a floating carrier connected to the frame member with a gap formed therebetween, wherein the floating carrier has a semi-circular interior perimeter. The centered semiconductor wafer pairs are positionable within a processing system using the end effector under robotic control. The centered semiconductor wafer pairs are bonded together without the presence of the end effector in the bonding device. 1. A system for placing aligned wafer pairs into a processing device , the system comprising:an end effector having a frame member and a floating carrier for carrying wafers in spaced alignment, wherein the floating carrier is movably connected to the frame member;a robotic arm connected to the end effector; anda processing device having a processing chamber, wherein the frame member and floating carrier are positioned within the processing chamber, and wherein the floating carrier is decoupled from the frame member.2. The system of claim 1 , wherein a plurality of vacuum pads are connected to the floating carrier claim 1 , wherein each of the plurality of vacuum pads extend inward of the semi-circular interior perimeter of the floating carrier.3. The system of claim 1 , wherein the plurality of vacuum pads are movably connected to the floating carrier and radially adjustable along the semi-circular interior perimeter.4. The system of claim 2 , wherein the floating carrier is movably connected to the frame member and adjustable along an axis of the semi-circular interior perimeter claim 2 , wherein a size of a gap formed between the frame member and the floating carrier is adjustable.5. The system of claim 1 , wherein a plurality of limit features loosely couple the floating carrier to the frame member.6. The system of claim 1 , further comprising a ...

Wafer bonding apparatus and wafer bonding system using the same

A wafer bonding apparatus includes a first bonding chuck to fix a first wafer on a first surface thereof, a second bonding chuck to fix a second wafer on a second surface thereof facing the first surface, a bonding initiation member at a center of the first bonding chuck to push the first wafer towards the second surface, and a membrane member including a protrusion protruding from a center portion of the second surface towards the first surface, and a planar portion defining the protrusion on an outer region surrounding the center portion.

POROUS CHUCK TABLE

A porous chuck table for holding a plate-like workpiece under suction includes a porous plate having a porous structure, the porous plate having a holding surface for holding the workpiece under suction thereon, and a frame surrounding the porous plate and having a face side lying flush with the holding surface. The porous plate is at least made of spherical glass particles, adjacent ones of the glass particles are partly joined together, and interstices between adjacent ones of the partly joined glass particles function as pores through which a fluid can flow. 1. A porous chuck table for holding a plate-like workpiece under suction , comprising:a porous plate having a porous structure, the porous plate having a holding surface for holding the workpiece under suction thereon; anda frame surrounding the porous plate and having a face side lying flush with the holding surface,wherein the porous plate is at least made of spherical glass particles, adjacent ones of the glass particles are partly joined together, and interstices between adjacent ones of the partly joined glass particles function as pores through which a fluid flows.2. The porous chuck table according to claim 1 , wherein the holding surface of the porous plate is flat.3. The porous chuck table according to claim 1 , wherein the glass particles have particle diameters selected in a predetermined range from 3 μm to 4 mm.4. The porous chuck table according to claim 1 , wherein the frame is made of glass.5. The porous chuck table according to claim 1 , wherein porosity of the porous plate represented by a ratio of a volume of the pores to the volume of the porous plate is in a range from 5% to 40%.6. A method of manufacturing a porous chuck table claim 1 , comprising the steps of:filling a mold frame with spherical glass particles having particle diameters selected in a predetermined range from 3 μm to 4 mm;sintering the glass particles that have filled the mold frame to partly join adjacent ones of the ...

LASER PROCESSING APPARATUS

A laser beam irradiation unit of laser processing apparatus includes a pulse laser beam oscillating unit, a condenser that condenses a pulse laser beam and emits the beam to a workpiece held by a chuck table, a dichroic mirror disposed between the pulse laser beam oscillating unit and the condenser, a strobe light irradiation unit that emits light to a path on which the dichroic mirror and the condenser are disposed, a beam splitter disposed between the strobe light irradiation unit and the dichroic mirror, and an imaging unit disposed on the path of light split by the beam splitter. A controller actuates the strobe light irradiation unit and the imaging unit according to the timing of the pulse laser beam, and detects the width of a laser-processed groove immediately after emission of the pulse laser beam on the basis of an image signal from the imaging unit. 1. A laser processing apparatus comprising:a chuck table that holds a workpiece;laser beam irradiating means that irradiates the workpiece held by the chuck table with a pulse laser beam;X-axis direction moving means that moves the chuck table and the laser beam irradiating means relatively in an X-axis direction that is a processing feed direction;Y-axis direction moving means that moves the chuck table and the laser beam irradiating means relatively in a Y-axis direction that is an indexing feed direction orthogonal to the X-axis direction; andcontrol means that controls the laser beam irradiating means, the X-axis direction moving means, and the Y-axis direction moving means, pulse laser beam oscillating means that oscillates the pulse laser beam,', 'a condenser that condenses the pulse laser beam oscillated from the pulse laser beam oscillating means and emits the pulse laser beam to the workpiece held by the chuck table,', 'a dichroic mirror that is disposed between the pulse laser beam oscillating means and the condenser and reflects the pulse laser beam oscillated from the pulse laser beam oscillating ...

Apparatus, hybrid laminated body, method, and materials for temporary substrate support

A hybrid laminated body is provided that includes a light-transmitting support, a latent release layer disposed upon the light-transmitting support, a joining layer disposed upon the latent release layer, and a thermoplastic priming layer disposed upon the joining layer. The hybrid laminated body can further include a substrate to be processed such as, for example, a silicon wafer to be ground. Also provided is a method for manufacturing the provided laminated body.

ORBITAL POLISHING WITH SMALL PAD

A chemical mechanical polishing apparatus includes a plate on which a substrate is received, and a movable polishing pad support and coupled polishing pad which move across the substrate and orbit a local region of the substrate during polishing operation. The load of the pad against the substrate, the revolution rate of the pad, and the size, shape, and composition of the pad, may be varied to control the rate of material removed by the pad.

POLISHING METHOD AND POLISHING APPARATUS

A polishing method capable of preventing damage to a substrate is disclosed. The polishing method includes inspecting a periphery of a substrate for an abnormal portion, polishing the substrate if the abnormal portion is not detected, and not polishing the substrate if the abnormal portion is detected. The abnormal portion of the substrate may be an foreign matter, such as an adhesive, attached to the periphery of the substrate. After polishing of the substrate, the periphery of the substrate may be inspected again for an abnormal portion. 1. A polishing method , comprising:inspecting a periphery of a substrate for an abnormal portion;polishing the substrate if the abnormal portion is not detected; andnot polishing the substrate if the abnormal portion is detected.2. The polishing method according to claim 1 , further comprising:after polishing of the substrate, inspecting the periphery of the substrate again for an abnormal portion.3. The polishing method according to claim 2 , further comprising:not starting polishing of a subsequent substrate if the abnormal portion is detected in the periphery of the polished substrate.4. The polishing method according to claim 2 , further comprising:changing polishing conditions for a subsequent substrate if the abnormal portion is detected in the periphery of the polished substrate.5. The polishing method according to claim 1 , wherein inspecting the periphery of the substrate for an abnormal portion comprises obtaining an image of the periphery of the substrate and inspecting the periphery of the substrate for an abnormal portion based on the image.6. The polishing method according to claim 5 , wherein inspecting the periphery of the substrate for an abnormal portion based on the image comprises inspecting the periphery of the substrate for an abnormal portion by comparing an index value claim 5 , which indicates a characteristic of the abnormal portion appearing on the image claim 5 , with a predetermined threshold value.7. ...

Bonding device and bonding method

A bonding device for bonding substrates together, includes: a first holding unit configured to hold a first substrate on a lower surface thereof; a second holding unit located below the first holding unit and configured to hold a second substrate on an upper surface thereof; a moving mechanism configured to move the first holding unit or the second holding unit in a horizontal direction and a vertical direction; a first image pickup unit located in the first holding unit and configured to pick up an image of the second substrate held in the second holding unit; and a second image pickup unit located in the second holding unit and configured to pick up an image of the first substrate held in the first holding unit, at least one of the first image pickup unit and the second image pickup unit including an infrared camera.

Die Bonding Apparatus and Manufacturing Method for Semiconductor Device

A die bonding apparatus includes a first illumination device for irradiating a die with light along an optical axis of a photographing device, and a second illumination device that is located above the first illumination device and irradiates the die with light having a predefined angle with respect to the optical axis. The second illumination device includes a second light emitting section, and a light path control member that limits a light path of second irradiation light emitted from the second light emitting section. The second illumination device is disposed in such a way that the second irradiation light, the light path of which is limited by the light path control member, passes through the cylinder of the first illumination device, and the top surface of the die is irradiated with the second irradiation light.

BENDABLE CARRIER MOUNT, DEVICE AND METHOD FOR RELEASING A CARRIER SUBSTRATE

A flexible carrier mount for mounting of a carrier substrate when the carrier substrate is detached from a product substrate, detachment means being provided for debonding the product substrate with bending of the carrier substrate. A device for detaching a carrier substrate from one product substrate in one detachment direction having: a carrier mount flexible in the detachment direction for mounting the carrier substrate, a substrate mount for mounting the product substrate, and detachment means for debonding the carrier substrate from the product substrate with bending of the carrier substrate. A method for detaching a carrier substrate from a product substrate in one detachment direction with the steps: mounting the product substrate with a substrate mount and mounting the carrier substrate with a carrier mount flexible in the detachment direction and debonding the carrier substrate from the product substrate with bending of the carrier substrate.

POLISHING WITH EDDY CURRENT FEED MEAUREMENT PRIOR TO DEPOSITION OF CONDUCTIVE LAYER

A method of controlling polishing includes storing a base measurement, the base measurement being an eddy current measurement of a substrate after deposition of at least one layer overlying a semiconductor wafer and before deposition of a conductive layer over the at least one layer, after deposition of the conductive layer over the at least one layer and during polishing of the conductive layer on substrate, receiving a sequence of raw measurements of the substrate from an in-situ eddy current monitoring system, normalizing each raw measurement in the sequence of raw measurement to generate a sequence of normalized measurements using the raw measurement and the base measurement, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on at least the sequence of normalized measurements. 1. A computer program product , encoded on one or more non-transitory computer storage media , comprising instructions that when executed by one or more computers cause the one or more computers to perform operations comprising:storing a base measurement, the base measurement being an eddy current measurement of a substrate after deposition of at least one layer overlying a semiconductor wafer and before deposition of a conductive layer over the at least one layer;after deposition of the conductive layer over the at least one layer and during polishing of the conductive layer on substrate, receiving a sequence of raw measurements of the substrate from an in-situ eddy current monitoring system;normalizing each raw measurement in the sequence of raw measurement to generate a sequence of normalized measurements using the raw measurement and the base measurement; anddetermining at least one of a polishing endpoint or an adjustment for a polishing rate based on at least the sequence of normalized measurements.2. The computer program product of claim 1 , wherein the at least one layer overlying the semiconductor wafer comprises an underlying ...

Bonding apparatus

A bonding apparatus includes an upper holding unit, a lower holding unit, a pushing unit and an attracting/holding unit. The upper holding unit is configured to hold a first substrate from a top surface thereof which is a non-bonding surface. The lower holding unit is provided under the upper holding unit and is configured to hold a second substrate from a bottom surface thereof while allowing the second substrate to face the first substrate. The pushing unit is configured to press a central portion of the first substrate from above to bring the central portion of the first substrate into contact with the second substrate. The attracting/holding unit is configured to be moved up and down with respect to the upper holding unit and hold a part of the top surface of the first substrate by attraction before the first substrate is held by the upper holding unit.

ELECTROSTATIC CHUCK TABLE

An electrostatic chuck table for holding a workpiece includes: a plate-shaped base transmittable with respect to a laser beam having a predetermined wavelength allowing the laser beam to be transmitted through the workpiece, the plate-shaped base having a first surface and a second surface opposite the first surface; an electrostatic attraction electrode assembly transmittable with respect to the laser beam having the predetermined wavelength, the electrostatic attraction electrode assembly being formed on the first surface of the base; and a resin layer transmittable with respect to the laser beam having the predetermined wavelength, the resin layer covering the electrode assembly and providing a holding surface for holding the workpiece thereon. The electrostatic chuck table is used in forming a modified layer within the workpiece held on the holding surface with the laser beam that is applied to the workpiece from the side of the second surface of the base. 1. An electrostatic chuck table for holding a workpiece , comprising:a plate-shaped base transmittable with respect to a laser beam having a predetermined wavelength allowing the laser beam to be transmitted through the workpiece, said plate-shaped base having a first surface and a second surface opposite said first surface;an electrostatic attraction electrode assembly transmittable with respect to said laser beam having the predetermined wavelength, the electrostatic attraction electrode assembly being formed on the first surface of said base; anda resin layer transmittable with respect to said laser beam having the predetermined wavelength, the resin layer covering said electrode assembly and providing a holding surface for holding said workpiece thereon;wherein said chuck table is adapted for use when said laser beam is applied to said workpiece held on said holding surface from a side of the second surface of said base to form a modified layer within said workpiece.2. The electrostatic chuck table ...

DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

A method for producing a display device includes locating a substrate, including a plurality of pixels, on a jig including a magnet; locating a plate formed of a magnetic material on the substrate to secure the substrate; and folding back an end portion of the substrate in a state where the substrate is held between the jig and the plate. 1. A method for producing a display device , comprising:locating a substrate, including a plurality of pixels, on a jig including a magnet;locating a plate formed of a magnetic material on the substrate to secure the substrate by a magnetic force; andfolding back an end portion of the substrate in a state where the substrate is held between the jig and the plate.2. The method for producing a display device according to claim 1 , wherein folding back the end portion of the substrate includes folding back the substrate with a spacer being held inside.3. The method for producing a display device according to claim 2 , wherein:the substrate has a first marker and a second marker provided thereon at different positions from each other; andthe end portion of the substrate is folded while being positionally aligned by use of the first marker and the second marker.4. The method for producing a display device according to claim 1 , wherein:the jig includes a protrusion for positional alignment;the plate has a hole having a size sufficiently large to allow the protrusion to be inserted thereinto; andthe plate is located on the substrate such that the protrusion is fit into the hole.5. The method for producing a display device according to claim 1 , wherein the substrate is located on the jig while being positionally aligned by use of a marker or a recessed portion provided on or in the jig.6. The method for producing a display device according to claim 1 , wherein:the plate has a recessed portion formed therein; andthe plate is located on the substrate such that a part of the substrate is fit into the recessed portion.7. The method for ...

Machine Learning Systems for Monitoring of Semiconductor Processing

Operating a substrate processing system includes receiving a plurality of sets of training data, storing a plurality of machine learning models, storing a plurality of physical process models, receiving a selection of a machine learning model from the plurality of machine learning models and a selection of a physical process model from the plurality of physical process models, generating an implemented machine learning model according to the selected machine learning model, calculating a characterizing value for each training spectrum in each set of training data thereby generating a plurality of training characterizing values with each training characterizing value associated with one of the plurality of training spectra, training the implemented machine learning model using the plurality of training characterizing values and plurality of training spectra to generate a trained machine learning model, and passing the trained machine learning model to a control system of the substrate processing system. 1. A method of operating a substrate processing system , comprising:receiving a plurality of sets of training data, each set of training data including a plurality of raw training values, a timestamp for each raw training value from the plurality of raw training values, and a starting characterizing value and/or an ending characterizing value for the plurality of raw training values;storing a plurality of machine learning models, each machine learning model providing at least one different hyperparameter;storing a plurality of physical process models, each physical process model providing a different function to generate characterizing values as a different function of time and/or a different physical process parameter;receiving a selection of a machine learning model from the plurality of machine learning models and a selection of a physical process model from the plurality of physical process models to provide a combination of a selected machine learning model and a ...

DEVICE AND METHOD FOR BONDING OF SUBSTRATES

A method for bonding a first substrate with a second substrate at respective contact faces of the substrates with the following steps: holding the first substrate to a first sample holder surface of a first sample holder with a holding force Fand holding the second substrate to a second sample holder surface of a second sample holder with a holding force F; contacting the contact faces at a bond initiation point and heating at least the second sample holder surface to a heating temperature T; bonding of the first substrate with the second substrate along a bonding wave running from the bond initiation point to the side edges of the substrates, wherein the heating temperature Tis reduced at the second sample holder surface during the bonding. 1. A device for bonding a first substrate with a second substrate , comprising:a measuring means configured to detect a bonding wave to enable control of the bonding wave.2. The device according to claim 1 , wherein the measuring means is further configured to detect a back side of the first substrate.3. The device according to claim 1 , wherein the measuring means is further configured to measure the bonding wave.4. The device according to claim 1 , further comprising:{'sub': 'H1', 'a first substrate holder configured to hold the first substrate with a first holding force F; and'}{'sub': 'H2', 'a second substrate holder configured to hold the second substrate with a second holding force F,'}{'sub': H1', 'H2, 'wherein at least one of the first and second holding forces Fand Fis reduced to 0 to control the bonding wave.'}5. The device according to claim 1 , wherein the measuring means is further configured to detect a state of the bonding wave and an advance of the bonding wave.6. The device according to claim 1 , wherein the measuring means is further configured to detect at least one of a position of the bonding wave and a size of a bonded area.7. The device according to claim 1 , wherein the measuring means comprises at least ...

Device and method for bonding of substrates

A method and a corresponding device for bonding a first substrate with a second substrate at mutually facing contact faces of the substrates. The method includes holding of the first substrate to a first holding surface of a first holding device and holding of the second substrate to a second holding surface of a second holding device. A change in curvature of the contact face of the first substrate and/or a change in curvature of the contact face of the second substrate are controlled during the bonding.

METHOD AND DEVICE FOR THE PRODUCTION OF WAFERS WITH A PRE-DEFINED BREAK INITIATION POINT

The present invention relates to a method for the production of layers of solid material, in particular for use as wafers. The method may include the following steps: providing a workpiece for the separation of the layers of solid material with the workpiece optionally having at least one exposed surface, producing and/or providing a carrier unit for receiving at least one layer of solid material having the carrier unit optionally having a receiving layer for holding the layer of solid material, attaching the receiving layer to the exposed surface of the workpiece forming a composite structure, producing a break initiation point by means of pre-defined local stress induction in the peripheral region, including at the edge, of the workpiece, and separating the layer of solid material from the workpiece starting from the break initiation point. 1. A method for generation of individual layers of solid material from a workpiece in the form of individual wafers , which layers are separated , including:a pre-defined stress distribution such that an even thickness distribution of the separated wafer is produced,wherein the workpiece comprises silicon carbide or sapphire,wherein the pre-defined stress distribution is induced indirectly by mean of at least one radiation source,wherein the stresses are induced in a region between an outer edge of the workpiece and the center of the workpiece,wherein the pre-defined stress distribution within the workpiece is induced in order to influence a separation sequence when separating the layer of solid material from the workpiece and the layer of solid material is separated from the workpiece along a plane extending within the workpiece according to the separating sequence influenced by the pre-defined stress distribution,wherein stresses are generated by means of sound waves which come above the limit stress, andwherein sound waves are injected into the solid such that at one point sufficient energy is introduced in order to exceed ...

BONDING APPARATUS AND BONDING METHOD

A bonding apparatus includes a first holder, a second holder, an imaging unit and a moving device. The first holder is configured to hold a first substrate. The second holder is disposed to face the first holder and configured to hold a second substrate to be bonded to the first substrate. The imaging unit includes a first imaging device configured to image a first alignment mark formed on a surface of the first substrate facing the second substrate and a second imaging device configured to image a second alignment mark formed on a surface of the second substrate facing the first substrate. The moving device is configured to move the imaging unit in a first direction and a second direction intersecting with the first direction within a plan region between the first holder and the second holder. 1. A bonding apparatus , comprising:a first holder configured to hold a first substrate;a second holder disposed to face the first holder and configured to hold a second substrate to be bonded to the first substrate;an imaging unit comprising a first imaging device configured to image a first alignment mark formed on a surface of the first substrate facing the second substrate and a second imaging device configured to image a second alignment mark formed on a surface of the second substrate facing the first substrate; anda moving device configured to move the imaging unit in a first direction and a second direction intersecting with the first direction within a plan region between the first holder and the second holder.2. The bonding apparatus of claim 1 ,wherein, in the imaging unit, an optical axis of an objective lens belonging to the first imaging device and an optical axis of an objective lens belonging to the second imaging device lie on a same straight line.3. The bonding apparatus of claim 2 ,wherein the first imaging device comprises a first objective lens and a second objective lens having a magnification higher than that of the first objective lens,the second ...

VACUUM CHUCK FOR BONDING SUBSTRATES, APPARATUS FOR BONDING SUBSTRATES INCLUDING THE SAME, AND METHOD OF BONDING SUBSTRATES USING THE SAME

A vacuum chuck for bonding substrates includes a chucking plate including vacuum holes to hold the substrate, partitions arranged in the chucking plate, the partitions dividing the chucking plate into regions, and a temperature control member in each one of the regions, the temperature control member to independently control temperature in each of the regions to selectively expand or contract portions of the substrate in contact with each of the regions. 1. A vacuum chuck for bonding substrates , the vacuum chuck comprising:a chucking plate including vacuum holes to hold a substrate;partitions arranged in the chucking plate, the partitions dividing the chucking plate into regions; anda temperature control member in each one of the regions, the temperature control member to independently control temperature in each of the regions to selectively expand or contract portions of the substrate in contact with each of the regions.2. The vacuum chuck as claimed in claim 1 , wherein the partitions are radially extended from a center point of the chucking plate.3. The vacuum chuck as claimed in claim 2 , wherein the partitions are spaced apart from each other by a uniform angle.4. The vacuum chuck as claimed in claim 2 , wherein the temperature control member extends in parallel to a bottom of the chucking plate and in a radial direction relative to the center point of the chucking plate.5. The vacuum chuck as claimed in claim 1 , wherein the partitions include an adiabatic material.6. The vacuum chuck as claimed in claim 1 , wherein the temperature control member includes a heat pipe in each one of the regions.7. The vacuum chuck as claimed in claim 1 , wherein the temperature control member includes a Peltier element in each of the regions.8. An apparatus for bonding substrates claim 1 , the apparatus comprising:an upper vacuum chuck including an upper vacuum hole to hold an upper substrate; a chucking plate arranged under the upper vacuum chuck and having vacuum holes to ...

Wiping device and stack manufacturing apparatus

An object is to eliminate a harmful effect when a film is bonded by wiping an adhering sealant ( 30 a ). Characterized is a wiping device ( 200 ) including a stage ( 230 ) that supports a sheet-like member ( 220 ), a wiping means ( 210 ) that wipes an adhering object ( 30 a ) adhering on a peripheral portion of the sheet-like member ( 220 ), a wiping cloth ( 241 ) that is attachably and detachably provided for the wiping means ( 210 ), and a solvent ( 261 ) that adheres to the wiping cloth ( 241 ), in which the wiping means ( 210 ) is provided with the wiping cloth ( 241 ), makes the solvent ( 261 ) adhere to the wiping cloth ( 241 ), and wipes the adhering object ( 30 a ), or a stack manufacturing apparatus ( 1000 ) including such a wiping device ( 200 ).

Transfer device and method for transferring substrate without unexpected rotation

A transfer device for transferring a substrate is provided, including a base plate, at least one suction unit disposed on a side of the base plate to generate suction on the substrate, and a plurality of movement restriction units disposed on the side of the base plate to limit the movement of the substrate during transfer. Each of the movement restriction units includes a main body, an abutting member, and a pusher. The main body is attached to the base plate and has a chamber therein. The abutting member is movably received in the chamber and has an abutting portion that protrudes beyond the main body to abut the substrate. The pusher is received in the chamber and configured to push the abutting member to move toward the substrate.

RETAINING RING FOR CMP

A retaining ring includes a generally annular body having an inner surface to constrain a substrate and a bottom surface, the bottom surface having a plurality of channels extending from an outer surface to the inner surface, and a plurality of islands separated by the channels and providing a contact area to contact a polishing pad, wherein the contact area is about 15-40% of a plan area of the bottom surface. 1. A retaining ring , comprising:a generally annular body having an inner surface to constrain a substrate and a bottom surface, the bottom surface having a plurality of channels extending from an outer surface to the inner surface, and a plurality of islands separated by the channels and providing a contact area to contact a polishing pad, wherein the contact area is about 15-40% of a plan area of the bottom surface.2. The retaining ring of claim 1 , wherein the contact area is about 25-30% of the plan area of the bottom surface.3. The retaining ring of claim 1 , wherein the plurality of channels are spaced uniformly around the annular body.4. The retaining ring of claim 3 , wherein there are eight to thirty channels.5. The retaining ring of claim 1 , wherein each channel of the plurality of channels comprises an inlet portion at the outer surface claim 1 , a constriction extending substantially perpendicular to the width of the retaining ring claim 1 , and an outlet portion extending from the constriction to the inner surface.6. The retaining ring of claim 4 , wherein the outlet portion widens toward the inner surface.7. The retaining ring of claim 5 , wherein the inlet portion is circumferentially longer than the outlet portion.8. The retaining ring of claim 1 , wherein each channel of the plurality of channels comprises a leading edge and a trailing edge claim 1 , and wherein the leading and trailing edge are not symmetric across a centerline of the channel.9. The retaining ring of claim 8 , wherein the leading edge comprises a linear segment extending ...

Apparatus for Controlling a Movement of a Grinding Wheel, Semiconductor Wafer Grinding System and Method for Forming Semiconductor Devices

An apparatus for controlling a movement of a grinding wheel of a semiconductor wafer grinding system includes: an interface to obtain a feedback signal including grinding force information indicating a force applied to a semiconductor wafer by the grinding wheel; and a control module to generate a control signal for controlling the movement of the grinding wheel based on the grinding force information. The control module generates the control signal to trigger a forward movement of the grinding wheel according to a desired velocity profile during the grinding, if the grinding force information indicates that a force applied by the grinding wheel is below a force threshold. The control module generates the control signal to trigger a movement of the grinding wheel slower than the desired velocity profile during the grinding, if the grinding force information indicates that the force applied by the grinding wheel is above the force threshold. 1. An apparatus for controlling a movement of a grinding wheel of a semiconductor wafer grinding system , the apparatus comprising:at least one interface configured to obtain a feedback signal comprising grinding force information indicating a force applied to a semiconductor wafer by the grinding wheel; anda control module configured to generate a control signal for controlling the movement of the grinding wheel based on the grinding force information,wherein the control module is configured to generate the control signal to trigger a forward movement of the grinding wheel according to a desired velocity profile during grinding of the semiconductor wafer if the grinding force information indicates that a force applied by the grinding wheel is below a force threshold,wherein the control module is configured to generate the control signal to trigger a movement of the grinding wheel slower than the desired velocity profile during grinding of the semiconductor wafer if the grinding force information indicates that the force applied ...

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

A substrate processing apparatus includes a holder configured to hold a combined substrate; a peripheral modifying device configured to form a peripheral modification layer to an inside of a first substrate along a boundary between a peripheral portion and a central portion; an internal modifying device configured to form an internal modification layer to the inside of the first substrate along a plane direction; a holder moving mechanism configured to move the holder in a horizontal direction. The peripheral modifying device radiates laser light for periphery to the inside of the first substrate while moving the holder to perform eccentricity correction. The internal modifying device radiates laser light for internal surface without performing the eccentricity correction at least at a center portion of the inside of the first substrate. 1. A substrate processing apparatus configured to process a substrate , comprising:a holder configured to hold, in a combined substrate in which a first substrate and a second substrate are bonded to each other, the second substrate;a detector configured to detect a boundary between a bonding region where the first substrate and the second substrate are bonded and a non-bonding region located at an outside of the bonding region;a peripheral modifying device configured to form a peripheral modification layer by radiating laser light for periphery to an inside of the first substrate held by the holder along a boundary between a peripheral portion of the first substrate as a removing target and a central portion thereof;an internal modifying device configured to form an internal modification layer by radiating laser light for internal surface to the inside of the first substrate held by the holder along a plane direction of the first substrate;a holder moving mechanism configured to move the holder in a horizontal direction; anda controller configured to calculate an eccentric amount between a center of the holder and a center of the ...

METHOD FOR PRODUCING SEMICONDUCTOR WAFERS BY MEANS OF A WIRE SAW

Semiconductor wafers with improved geometry are produced from a workpiece by processing the workpiece by means of a wire saw, by 15.-. (canceled)6. A method for producing semiconductor wafers from a workpiece by processing the workpiece by means of a wire saw , comprisingfeeding the workpiece through an arrangement of wires which are tensioned between wire guide rollers and move in a running direction;producing kerfs when the wires engage into the workpiece;determining at last one placement error of the kerfs; andinducing a compensating movement of the workpiece as a function of the determined placement error(s) along a longitudinal axis of the workpiece during the feeding of the workpiece through the arrangement of wires.7. The method of claim 6 , comprising determining a placement error of the kerfs during the feeding of the workpiece through the arrangement of wires.8. The method of claim 6 , comprising determining a placement error of the kerfs by measuring the position of the kerfs by means of irradiating the kerfs with optical radiation claim 6 , IR radiation claim 6 , X-radiation or γ radiation claim 6 , by mechanical sensing of the kerfs or by inductive or capacitive measurement of the kerfs claim 6 , and comparing the measured position with a setpoint position of the kerfs.9. The method of claim 7 , comprising determining a placement error of the kerfs by measuring the position of the kerfs by means of irradiating the kerfs with optical radiation claim 7 , IR radiation claim 7 , X-radiation or γ radiation claim 7 , by mechanical sensing of the kerfs or by inductive or capacitive measurement of the kerfs claim 7 , and comparing the measured position with a setpoint position of the kerfs.10. The method of claim 6 , further comprising tracking changes in a wire saw-specific correction profile in the course of the processing of a plurality of workpieces claim 6 , and initiating a predictive maintenance measure if the changes have exceeded an established ...

HEATING AND COOLING APPARATUS FOR BONDING MACHINE AND MANUFACTURING METHOD THEREOF

A heating and cooling arrangement of a bonder is disclosed which includes a heating-wire plate (), a cooling-pipe plate (), a heating wire (), a cooling pipe () and a solder layer. The heating wire () and the cooling pipe () are welded in respective channels in the heating-wire plate () and the cooling-pipe plate () and uniformly welded together by the solder layer. The heating wire () is configured to connect to an external heating device, the cooling pipe () is configured to connect to an external cooling device. A method of fabricating such a heating and cooling arrangement of a bonder is also disclosed. In the bonder heating and cooling arrangement, the heating wire and the cooling pipe are uniformly welded together by the solder layer to form an integrated assembly with a smaller overall thickness, a shortened heat transfer path and increased cooling efficiency. This reduces the work load of a required vacuum pump, enhances the surface flatness of the component and increases bonding accuracy. 1. A heating and cooling arrangement of a bonder , comprising a heating-wire plate , a cooling-pipe plate , a heating wire , a cooling pipe and a solder layer , the heating wire and the cooling pipe being welded in respective channels in the heating-wire plate and the cooling-pipe plate and uniformly welded together by the solder layer , the heating wire configured to connect to an external heating device , the cooling pipe configured to connect to an external cooling device.2. The heating and cooling arrangement of a bonder according to claim 1 , wherein the external heating device is an electric heater.3. The heating and cooling arrangement of a bonder according to claim 1 , wherein the external cooling device is filled with a cooling substance as a refrigerant.4. The heating and cooling arrangement of a bonder according to claim 1 , wherein one of or each of the heating wire and the cooling pipe is a uniform spiral.5. The heating and cooling arrangement of a bonder ...

Substrate cleaning apparatus and substrate cleaning method

A substrate cleaning apparatus includes a substrate holding mechanism holding the substrate, a rotation mechanism rotating the substrate held by the substrate holding mechanism, and a cleaning mechanism cleaning the substrate. The cleaning mechanism includes a support column, an arm extending from the support column and having a fixed height position, a cleaning tool supported by the arm and cleaning a surface of the substrate by contacting the surface, a lift mechanism moving the cleaning tool vertically with respect to the arm between an raised position separated from the substrate and a lowered position in contact with the substrate, and a controller controlling at least a speed at which the cleaning tool descends.

POLISHING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD

A polishing apparatus according to an embodiment includes a first polishing part, a second polishing part, and an annular part. The second polishing part includes a mounting surface for a semiconductor substrate, and rubs the semiconductor substrate mounted on the mounting surface while pressing the semiconductor substrate against the first polishing part. The annular part includes a support part provided in the second polishing part, and a plurality of convex portions that project from the support part toward the first polishing part, are arranged in a circumferential direction around the mounting surface while being supported by the support part, and are movable in a radial direction of the semiconductor substrate. 1. A polishing apparatus comprising:a first polishing part;a second polishing part comprising a mounting surface for a semiconductor substrate, and rubbing the semiconductor substrate mounted on the mounting surface while pressing the semiconductor substrate against the first polishing part; andan annular part comprising a support part provided in the second polishing part, and a plurality of convex portions that project from the support part toward the first polishing part, are arranged in a circumferential direction around the mounting surface while being supported by the support part, and are movable in a radial direction of the semiconductor substrate.2. The apparatus of claim 1 , whereinthe annular part comprises a first moving part moving the convex portions in the radial direction, andthe first moving part moves each of the convex portions according to rotation of the second polishing part in a state where each of the convex portions is in contact with the first polishing part.3. The apparatus of claim 2 , wherein the first moving part moves each of the convex portions in a radially inward direction when the second polishing part rotates in a same direction as when the second polishing part rubs the semiconductor substrate claim 2 , and moves ...

SEMICONDUCTOR DIE SINGULATION METHODS

In one embodiment, a method of singulating semiconductor die from a semiconductor wafer includes forming a material on a surface of a semiconductor wafer and reducing a thickness of portions of the material. Preferably, the thickness of the material is reduced near where singulation openings are to be formed in the semiconductor wafer. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. A cutting tool comprising:a central support section having a major axis;a cutting tip;a cutting surface adjacent to the cutting tip and extending from the cutting tip toward the central support section terminating in a distal end of the cutting surface wherein the cutting surface is attached to the central support section;a depth stop spaced a first distance from the cutting tip toward the central support section wherein, a first volume is formed by a portion of the cutting surface extending from the cutting tip to the depth stop; andan accumulation region adjacent to the central support section and extending away from the cutting surface, the accumulation region having a second volume that approximates the first volume.12. The cutting tool of wherein the accumulation region extends from the distal end of the cutting surface away from the cutting tip.13. The cutting tool of wherein the depth stop has a first portion that is configured to engage with a surface of a conductor on a semiconductor wafer to limit a depth of penetration of the cutting tip into the conductor.14. The cutting tool of wherein the central support section is rotatingly coupled to the cutting surface.15. The cutting tool of wherein the cutting surface angularly extends from the cutting tip to the central support section.16. The cutting tool of wherein the accumulation region is formed as a recess disposed within the central support section claim 11 , the accumulation region positioned adjacent to the distal end of the cutting ...

CHEMICAL MECHANICAL POLISHING APPARATUS AND METHODS

Embodiments of the invention provide a non-uniform substrate polishing apparatus that includes a polishing pad with two or more zones, each zone adapted to apply a different slurry chemistry to a different area on a substrate to create a film thickness profile on the substrate having at least two different film thicknesses. Polishing methods and systems adapted to polish substrates are also provided, as are numerous other aspects. 1. A non-uniform substrate polishing apparatus , comprising:a polishing pad having two or more zones, each zone adapted to apply a different slurry chemistry to a different area on a substrate to create a film thickness profile on the substrate having at least two different film thicknesses.2. The substrate polishing apparatus of claim 1 , including a linear polishing platform wherein the two or more zones are arranged across a width.3. The substrate polishing apparatus of claim 1 , including a rotary polishing platform wherein the two or more zones are arranged as concentric annuli.4. The substrate polishing apparatus of claim 1 , including a distributor adapted to dispense at least two of the different slurry chemistries to the two or more zones.5. The substrate polishing apparatus of claim 4 , wherein the distributor includes a first set of outlets adapted to dispense a first slurry chemistry to one of the two or more zones claim 4 , and a second set of outlets adapted to dispense a second slurry component to another of the two or more zones.6. The substrate polishing apparatus of claim 1 , wherein each zone has a width of about 2 mm or more.7. The substrate polishing apparatus of claim 1 , wherein a first zone has a chemistry applied having a material preservation function.8. The substrate polishing apparatus of claim 1 , wherein a first zone has a chemistry applied having a material removal function.9. The substrate polishing apparatus of claim 1 , wherein a first zone has a chemistry applied having a relatively aggressive material ...

SCANNER OVERLAY CORRECTION SYSTEM AND METHOD

A method includes performing a semiconductor fabrication process on a plurality of substrates. The plurality of substrates are divided into a first subset and a second subset. A rework process is performed on the second subset of the plurality of substrates but not on the first subset. A respective mean value of at least one exposure parameter for a lithography process is computed for each respective one of the first and second subsets of the plurality of substrates. A scanner overlay correction and a mean correction are applied to expose a second plurality of substrates on which the rework process has been performed. The mean correction is based on the computed mean values. 1. A control apparatus comprising:a controller configured to determine whether a semiconductor substrate to be exposed by a scanner has been subjected to a rework process; anda non-transitory, machine readable storage medium containing a mean correction value to be applied to the scanner for exposing the semiconductor substrate if the semiconductor substrate has been subjected to the rework process, wherein:the controller is configured to control the scanner using a scanner overlay correction, andthe controller is further configured to apply the mean correction value to adjust an exposure parameter of the scanner if the semiconductor substrate to be exposed by the scanner has been subjected to the rework process.2. The apparatus of claim 1 , wherein the controller is configured to control the scanner to expose substrates claim 1 , on which the rework process has not been performed claim 1 , without using the mean correction.3. The apparatus of claim 1 , wherein the controller is configured to compute the mean correction as a difference between:a mean of the exposure parameter among a first plurality of substrates that have been processed by the semiconductor fabrication process and the rework process, anda mean of the exposure parameter among a second plurality of substrates that have been ...

WASTE LIQUID TREATING APPARATUS

A waste liquid treating apparatus for purifying a waste liquid discharged from a processing apparatus includes a waste liquid accommodating tank for the waste liquid discharged by the processing apparatus, a spray water seal type pump that sucks a spray together with air in a processing region where a processing unit is disposed, a sealing water reservoir tank that recovers the spray and reserves the spray as a waste liquid, and a waste liquid filter unit that filters that waste liquid and the waste liquid in the waste liquid accommodating tank, to purify the waste liquid into fresh water. A fresh water reservoir tank reserves the fresh water obtained by filtering the waste liquid, and a pure water producing unit purifies the fresh water reserved in the fresh water reservoir tank into pure water. A temperature control unit controls the temperature of the pure water. 1. A waste liquid treating apparatus for purifying a waste liquid discharged from a processing apparatus , the waste liquid treating apparatus comprising:a waste liquid accommodating tank that accommodates a waste liquid discharged by the processing apparatus;a spray water seal type pump that sucks a spray together with air in a processing region where a processing unit of the processing apparatus is disposed;a sealing water reservoir tank that recovers the spray sucked by the spray water seal type pump and reserves the spray as the waste liquid;a waste liquid filter unit that filters the waste liquid reserved in the sealing water reservoir tank and the waste liquid in the waste liquid accommodating tank, to purify the waste liquids into fresh water;a fresh water reservoir tank that reserves the fresh water obtained by filtering the waste liquid by the waste liquid filter unit;a pure water producing unit that purifies the fresh water reserved in the fresh water reservoir tank into pure water; anda temperature control unit that controls the pure water obtained by purifying the fresh water by the pure ...

Substrate processing apparatus and substrate processing method

A substrate processing apparatus configured to process a substrate includes a holder configured to hold, in a combined substrate in which a first substrate and a second substrate are bonded to each other, the second substrate; and a modifying device configured to form, to an inside of the first substrate held by the holder, a peripheral modification layer by radiating laser light for periphery along a boundary between a peripheral portion of the first substrate as a removing target and a central portion thereof, and, also, configured to form an internal modification layer by radiating laser light for internal surface along a plane direction of the first substrate. The modifying device switches the laser light for periphery and the laser light for internal surface by adjusting at least a shape or a number of the laser light for periphery and the laser light for internal surface.

Substrate polishing apparatus and method

A substrate polishing apparatus includes a top ring for pressing a substrate against a polishing pad to perform substrate polishing; a spectrum generating unit that directs light onto a surface of the substrate of interest for polishing, receives reflected light, and calculates a reflectivity spectrum corresponding to the wavelength of the reflected light; and a storage that stores a plurality of thickness estimating algorithms for estimating the thickness of the polished surface in accordance with the reflectivity spectrum. A plurality of thickness estimating algorithms is selected among the thickness estimating algorithms stored in the storage, and a switching condition is set. The thickness of the polished surface is estimated by using the set thickness estimating algorithms, and if the switching condition is satisfied, the thickness estimating algorithm to be applied is switched.

Wafer bonding for 3d device packaging fabrication

An apparatus and method bond a first wafer to a second wafer. The apparatus includes a first pressure application device configured to apply pressure at a central region of the first wafer in a direction toward the second wafer to initiate a bonding process between the first wafer and the second wafer. The apparatus also includes one or more second pressure application devices configured to apply pressure between the central region and an outer edge of the first wafer to complete the bonding process. The one or more second pressure application devices apply pressure on the first wafer after the first pressure application device has initiated the bonding process and while the first pressure application device continues to apply pressure at the central region. A controller controls the first pressure application device and the one or more second pressure application devices.

SECURING MECHANISM AND METHOD FOR WAFER BONDER

Disclosed are various features associated with a securing mechanism for a wafer bonder. In certain situations, operation of securing mechanisms can generate undesirable particles and debris, and some them can be introduced to a wafer being bonded. In certain implementations, a securing mechanism can be configured to reduce the likelihood of such particles and debris being introduced to the wafer. 1. (canceled)2. An apparatus for bonding a wafer to a plate , the apparatus comprising:a base member having a platform surface dimensioned to receive thereon a wafer and a plate that are configured to be bonded;a lid pivotally coupled to the base member by a hinge, the lid being pivotable between a closed position adjacent the base member and an open position apart from the base member, where in the closed position the wafer and plate are interposed between the platform surface of the base member and a contact surface of the lid, where the open position facilitates the positioning of the wafer and the plate on the base member prior to bonding and facilitates the removal of the bonded assembly of wafer and plate from the base member after completion of bonding; anda clamp mechanism configured to engage and apply a force onto a side of the lid opposite the contact surface when in the closed position to thereby push the lid against the base member.3. The apparatus of wherein the contact portion includes a diaphragm configured to apply a bonding force onto the wafer and the plate when the lid is in the closed position.4. The apparatus of wherein the lid includes a flow path in fluid communication with the diaphragm claim 3 , the flow path configured to direct pressurized gas to the diaphragm to pressurize the diaphragm to thereby allow the diaphragm to apply the bonding force to the wafer and plate.5. The apparatus of wherein the base member includes a flow pathway configured to receive pressurized gas from a source claim 4 , the flow pathway configured to be placed in fluid ...

LED WAFER PROCESSING METHOD

An LED wafer is formed from a sapphire substrate having a front side. A plurality of crossing division lines are formed on the front side of the sapphire substrate to thereby define a plurality of separate regions where a plurality of LEDs are respectively formed. An LED wafer processing method includes preparing a V-blade having an annular cutting edge whose outer circumferential portion has a V-shaped cross section, rotatably mounting the V-blade in a cutting unit, holding the LED wafer on a holding table with the back side of the LED wafer exposed upward, and then relatively moving the cutting unit and the holding table to form a chamfered portion on the back side of the LED wafer along an area corresponding to each division line formed on the front side of the LED wafer.

Apparatus and Method for Bending a Substrate

A method includes placing a substrate on a first curved surface of a first bending tool, using a second bending tool with a second surface to apply pressure to the substrate, thereby pressing the substrate onto the first curved surface and bending the substrate, and removing the bended substrate from the first bending tool.

METHOD AND SUBSTRATE HOLDER FOR CONTROLLED BONDING OF SUBSTRATES

A method and a device for bonding a first substrate with a second substrate at mutually facing contact faces of the substrates. 1. A method for bonding a first substrate with a second substrate at respective mutually facing contact faces of the first and second substrates , the method comprising:holding the first substrate to a first holding surface of a first holding device having a plurality of fixing elements, and holding the second substrate to a second holding surface of a second holding device having a plurality of fixing elements,respectively fixing the first and second substrates to the first and second holding surfaces by switching on the plurality of fixing elements of the first and second holding devices, andcurvature of at least one of the contact faces of the first and second substrates before contacting of the contact faces of the first and second substrates,wherein after the contacting of the contact faces of the first and second substrates, switching off only those fixing elements of the first and second holding devices which are arranged uniaxially along a single contacting axis, and keeping switched on the remaining fixing elements of the first and second holding devices, so that the first and second substrates are first joined together only uniaxially along the contacting axis, andwherein the remaining fixing elements of the first and second holding devices are thereafter switched off, so that the first and second substrates are joined together over a whole area.2. The method according to claim 1 , wherein the plurality of fixing elements of the first and second holding devices are arranged in a grid shape.3. The method according to claim 1 , wherein the plurality of fixing elements of the first and second holding devices are switched off sequentially.4. The method according to claim 1 , wherein the plurality of fixing elements of the first and second holding devices are switched off simultaneously along a curve.5. The method according to claim 1 ...

Support Table, Support Table Assembly, Processing Arrangement, and Methods Thereof

According to various embodiments, a support table may include: a baseplate including a support structure, the support structure defining a support region over the baseplate to support at least one of a workpiece or a workpiece carrier therein; and one or more light-emitting components disposed between the baseplate and the support region. The one or more light-emitting components are configured to emit light into the support region. 1. A support table assembly for processing a workpiece , the support table assembly comprising:a workpiece carrier comprising a tape frame and a tape attached to the tape frame, the tape comprising a base layer and a light-sensitive adhesive layer configured to adhere a workpiece to the workpiece carrier; anda support table configured to support the workpiece carrier and comprising one or more light-emitting components configured to emit light into a direction of the tape when the workpiece carrier is supported by the support table,wherein the base layer of the tape is transparent for the light emitted by the one or more light-emitting components, for illumination of at least the light-sensitive adhesive layer of the tape.2. The support table assembly of claim 1 , wherein the workpiece is a semiconductor wafer claim 1 , and wherein the workpiece carrier is a wafer carrier.3. The support table assembly of claim 1 , wherein the tape is a dicing tape.4. The support table assembly of claim 1 , wherein the base layer comprises a polymer.5. The support table assembly of claim 4 , wherein the polymer is a poly olefin.6. The support table assembly of claim 1 , wherein the base layer has a layer thickness in a range from about 60 μm to about 300 μm.7. The support table assembly of claim 1 , wherein the light-sensitive adhesive layer comprises an adhesive material configured to reduce an adhesion strength of the light-sensitive adhesive layer when exposed to ultra-violet light.8. The support table assembly of claim 1 , wherein the light-sensitive ...

STACKING APPARATUS AND STACKING METHOD

A stacking apparatus that stacks substrate and a second substrate includes: a plurality of holding members that hold the first substrate, wherein the plurality of bolding members correct positional misalignment of the first substrate relative to the second substrate by preset amounts of correction, and the plurality of holding members include holding members having the amounts of correction that are different from each other. The stacking apparatus may further include a carrying unit that carries a holding member that is selected from among the plurality of holding members and holds the first substrate from a position here the holding member is housed to a position where the first substrate is held. 126-. (canceled)27. A method for stacking a first substrate and a second substrate , the stacking method comprising:selecting, from a plurality of holding members, a holding member that is able to hold the first substrate such that after the first substrate is joined with the second substrate a positional misalignment between the first substrate and the second substrate does not exceed a threshold.28. The method according to claim 27 , further comprisingthe selecting including selecting the holding member based on at least one of information about at least one of the first substrate and the second substrate and information about a factor to cause a fluctuation of state of at least one of the first substrate and the second substrate.29. The method according to claim 28 , further comprisingmeasuring the information about at least one of the first substrate and the second substrate before the first substrate is joined with the second substrate.30. The method according to claim 28 , further comprising measuring the information about at least one of the first substrate and the secondsubstrate after the first substrate is joined with the second substrate, whereinthe selecting includes selecting the holding member in a subsequent stacking process based on the measurement result ...

EXPANDING METHOD AND EXPANDING APPARATUS

An expanding method includes a frame securing step of securing an annular frame of a workpiece unit with frame securing means, an expanding step of, after the frame securing step, pressing a portion of an expandable sheet that lies between an outer circumferential edge of the workpiece and an inner circumferential edge of the annular frame, with an expanding drum to expand the expandable sheet, and a heating step of, after the expanding step, heating and shrinking a slackening portion of the expandable sheet which has been formed by expansion of the expandable sheet. The heating step includes a fully circumferential heating step of heating a full outer circumferential portion of the workpiece and an additional heating step of additionally heating a local area of the full outer circumferential portion of the workpiece. 1. An expanding method of expanding an expandable sheet of a workpiece unit that includes a workpiece , the expandable sheet affixed to the workpiece , and an annular frame to which an outer circumferential portion of the expandable sheet is affixed , the expanding method comprising the steps of:securing the annular frame of the workpiece unit with frame securing means;after the step of securing the annular frame, pressing a portion of the expandable sheet that lies between an outer circumferential edge of the workpiece and an inner circumferential edge of the annular frame, with pressing means to expand the expandable sheet; andafter the step of pressing the portion of the expandable sheet to expand the expandable sheet, heating and shrinking a slackening portion of the expandable sheet which has been formed by expansion of the expandable sheet, wherein heating a full outer circumferential portion of the workpiece, and', 'additionally heating a local area of the full outer circumferential portion of the workpiece., 'the step of heating and shrinking the slackening portion of the expandable sheet includes the steps of'}2. The expanding method according ...

Methods of aligning a semiconductor wafer for singulation

Implementations of a method for aligning a semiconductor wafer for singulation may include: providing a semiconductor wafer having a first side and a second side. The first side of the wafer may include a plurality of die and the plurality of die may be separated by streets. The semiconductor wafer may include an edge ring around a perimeter of the wafer on the second side of the wafer. The wafer may also include a metal layer on the second side of the wafer. The metal layer may substantially cover the edge ring. The method may include grinding the edge ring to create an edge exclusion area and aligning the semiconductor wafer with a saw using a camera positioned in the edge exclusion area on the second side of the wafer. Aligning the wafer may include using three or more alignment features included in the edge exclusion area.

Method and Apparatus for Plasma Dicing a Semi-conductor Wafer

The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

PROCESSING DEVICE

A processing device forms, in an object to be processed, a modified spot constituting a modified region. The processing device includes a first irradiation unit configured to irradiate the object with first light to temporarily increase absorptivity in a partial region of the object as compared with the absorptivity before irradiation of the first light, and a second irradiation unit configured to irradiate the partial region with second light in an absorptivity increase period in which the absorptivity of the partial region is temporarily increased. 1. A processing device for forming , in an object to be processed , a modified spot constituting a modified region , the processing device comprising:a first irradiation unit configured to irradiate the object with first light to temporarily increase absorptivity in a partial region of the object as compared with the absorptivity before irradiation of the first light; anda second irradiation unit configured to irradiate the partial region with second light in an absorptivity increase period in which the absorptivity of the partial region is temporarily increased.2. The processing device according to claim 1 , wherein energy of the second light is greater than energy of the first light.3. The processing device according to claim 1 , wherein peak intensity of the second light is lower than peak intensity of the first light.4. The processing device according to claim 1 , wherein a wavelength of the second light is different from a wavelength of the first light.5. The processing device according to claim 1 , wherein the second light is light with which no modified spot is formed when being singly applied to the object.6. The processing device according to claim 1 , wherein an irradiation direction of the second light with respect to the object is different from an irradiation direction of the first light with respect to the object.7. The processing device according to claim 1 , wherein an angle at which the second light ...

METHOD OF FORMING A SEMICONDUCTOR DIE CUTTING TOOL

In one embodiment, a method of singulating semiconductor die from a semiconductor wafer includes forming a material on a surface of a semiconductor wafer and reducing a thickness of portions of the material. Preferably, the thickness of the material is reduced near where singulation openings are to be formed in the semiconductor wafer. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. (canceled)12. (canceled)13. (canceled)14. (canceled)15. (canceled)16. (canceled)17. (canceled)18. (canceled)19. (canceled)20. A method of forming a tool for a semiconductor wafer comprising:forming the tool to reduce a thickness of a material formed on a semiconductor wafer;forming the tool with a cutting tip and cutting surfaces that are configured to penetrate into the material to form reduced thickness regions in the material; andforming an accumulation region of the tool with a recess having a first volume for accepting portions of the material displaced from within the material by the penetration.21. The method of wherein forming the tool with the cutting tip and cutting surfaces includes forming the cutting surfaces to have a cutting volume and wherein the first volume is no less than the cutting volume.22. (canceled)23. (canceled)25. (canceled)26. (canceled)27. The method of further including forming a cutting tip and a cutting surface adjacent to the cutting tip and extending from the cutting tip toward a central support section and terminating in a distal end of the cutting surface wherein the cutting surface is attached to the central support section.28. The method of further including forming a depth stop spaced a first distance from the cutting tip toward the central support section wherein a cutting volume is formed by a portion of the cutting surface extending from the cutting tip to the depth stop and wherein the cutting volume is approximately equal to the first volume.29. The method of ...

Chemical Mechanical Planarization Of Films Comprising Elemental Silicon

Chemical Mechanical Planarization (CMP) polishing compositions comprising abrasive particles and additives to boost removal rates of films comprising elemental silicon such as poly-silicon and Silicon-Germanium.