Device and method for aligning substrates

Technical Field

The invention is directed to a semiconductor die package or carrier loading the method, the method comprises the following steps: provide 1st tool part, the 1st tool part is constructed and arranged to the associated with the 1st most of the position of the tool part, supporting multiple semiconductor crystal grain, and the associated with the 1st the position of the tool part, provides most of the semiconductor crystal grain; to provide 2nd tool part, the 2nd tool part is provided with a plurality of element, the element is constructed and arranged to by the component to the provision of said 1st tool part on the surface area of the semiconductor die of the applied pressure; the 1st and 2nd tool part of the joint, the 1st and 2nd define a space between the tool parts, the semiconductor crystal grain is disposed in the space; the semiconductor crystal grains of the element to exert pressure on the area of surface of; the 1st and 2nd separation of part of the tool; and removing the processed semiconductor product. The invention further and the corresponding semiconductor die package or carrier for the loading apparatus.

Background Art

For example, the method can be a semiconductor die package method, the method further comprises in making said element on the semiconductor crystal grain of the predetermined surface area after pressure is applied, the material of the liquid state is introduced into the space; and making said material from the liquid state into a solid state. The method may, for example, further a semiconductor crystal grain carrier loading method, the method further includes providing a semiconductor die carrier, the carrier with the semiconductor crystal grain material has adhesive between the; 1st tool part on the provide the semiconductor crystal grains in the step of, in the stated 1st tool part is provided on the semiconductor die with the carrier; and allow the states mounts the material hardening. The method and the corresponding device is known, and therefore generally the semiconductor using the element to provide pressure on the surface of the crystalline grain relevant. In the semiconductor package in the case of the method, the use of certain of the semiconductor die to protect the semiconductor product packaging material.

The semiconductor crystal grain itself is made in a variety of other methods of oxygen SOI waferSIMOX SOI, for example, on the silicon wafer is made of, and in general comprises most of the integrated circuit (IC). Other semiconductor grains can be makes in on the glass substrate. The embodiment of the semiconductor die for the chip, sensor, power supply IC, flip-chip memory (MEM), passive not continuous contact pads (for example, in the use of solar energy), light emitting diode (LED), microfluidic chip, the biological sensor, like, and combinations thereof. The purpose described in this invention, the semiconductor product will be referred to as semiconductor crystal grain. Grain can be separated from the finished semiconductor wafer. The upper tool part 1st provides bare grain, but may also be disposed on the grain carrier to provide the semiconductor crystal grain. The majority of the contact pads of the grain may need to be kept open, therefore should not be encapsulated. The purposes of the sensor, generally speaking the area of sensor is maintained open, the purposes and for the power supply IC, the window on the radiator must be kept open, in order to allow the power supply IC is connected to the radiator and the environment of the good thermal contact between the. When the crystal grains are packaged, it may be necessary to most of the open area or window. In order to form the package of the open window, when the maintenance of the semiconductor product in the 1st and 2nd is the space between the tool parts, to grain contact with the semiconductor component, in the encapsulation method, the 1st and 2nd to 1st and 2nd tool portion of the outer insert element. The element or insert element (also referred to as inserts) can be fixed manner to the additional 2nd tool part, or can have load-spring pressure is applied by known method. In the two, and the insert in contact with the grain (the semiconductor product) the height of the surface of the, should be able to provide good contact. "Too high" of the insert element the surface of the crystalline grain in the grain is too high pressure is applied, which may damage the grain. "Too low" of the surface of the crystalline grain is inserted into the element and exerting sufficient pressure on the surface, causing the encapsulation material on the opening window extrusion or leach out. Strictly limit the height restrictions of the encapsulated process of processing window.

Furthermore, by the (can be displacement) is inserted into the element exerts force to be constant, however, if the insertion element is a wide than when the grain, probably because the packing material of the in the space and offset forces. The lower part of said insert element to provide the packing material of the the grain "overflow", will cause the offset by another force of the force, and thus by the insert element for exerting pressure on the grain. In the 1st and 2nd of the outer insert element in the space between the grain configuration will further make the packaging material in the lower part of the grain, the grain is supplied with a force, this force is applied relative to the strength of the insert element. Therefore, the applied to the crystal grains will increase of the total pressure, damage to the grain. The phenomenon even further limits the packaging process of the processing window.

In the semiconductor crystal grain carrier in the case of loading method, pressure is applied to the semiconductor crystal grains, in the stated states mounts when the material hardens, the material states mounts in the semiconductor crystal grains between with said carrier to provide good adhesion. This method is known as the sintering process. In this method, generally also in contact with the inserted element existing in the surface of the crystalline grain height variation, therefore, the pressure exerted on the grain is too high or too low. Too high pressure may also cause damage to the grain, and is too low in pressure between the grain and the carrier is unable to form sufficient adhesion and/or contact. In this case, the processing window is also strictly limited to the semiconductor product of the height restrictions on.

Content of the invention

An objective of this invention to provide half-conductor die package or carrier loading method, the method provides processing window, the insertion element by contact of the semiconductor crystal grain changes in the height of a surface of the restriction.

One or other of the present invention alternative target to provide half-conductor die package or carrier loading method, the stated method of the semiconductor crystal grain to provide clearly defined pressure, at least most of the pressure has nothing to do with the majority processing variables.

For this invention, still another or alternative objective is to provide a reliable method and apparatus, in order to keep clean the exposed area of the encapsulation processing, in particular for having a large number of highly changing products.

For this invention, still another or alternative objective to provide a method and apparatus, which can be inserted at the beginning of the treatment to the semiconductor element on the surface of the crystalline grain is set to the pressure exerted by the low value.

For this invention, still another or alternative objective to provide a method and apparatus, which allows the supporting substrate (lead frame) or tool part on the further processing is to be the majority of the semiconductor crystal grain, can have to the height change high permissibility, and then save the cost.

One or more of the target may be through semiconductor die package or carrier loading method to realize, the method comprises the following steps:

-Provides 1st tool part, the 1st tool part is constructed and arranged to in the associated with the 1st most position of the tool parts, support multiple (more than one) semiconductor crystal grain;

-In the associated with the 1st tool part of the position provides the majority of semiconductor crystal grain;

-Providing 2nd tool part, the 1st and the 2nd one of the tool parts can be inserted into the element includes a plurality of displacement, the displacement is inserted into the element is constructed and arranged to allow the displacement of each of the insert element can be provided on the tool part 1st of the semiconductor crystal surface pressure is applied to the region, the associated with the 1st tool part the position of each position can be with one or more of displacement of the associated insert element;

-The 1st and 2nd tool part of the joint, so in the 1st and 2nd define a space between the tool parts, arranged in the stated space of the semiconductor die;

-The insert element to the displacement of the surface of the semiconductor products exert forces on the area;

-Monitoring the displacement of each of the forces exerted by the insert element;

-By each can be displacement force exerted by the insert element is adjusted to a predetermined force;

-Separate the stated 1st and 2nd tool part; and

-Removing the processed semiconductor crystal grain.

In the specific embodiment of the invention, the displacement of each of the insert element is applied by the proportional-integral-differential (PID) to the adjusted under the control of, the PID control has a set point of the representative of the predetermined force, this is verified as a method for setting by the insert with the control force exerted by the effective method.

In a preferred embodiment, the displacement of each of the forces exerted by the insert element, is composed to each of the expandable device can be inserted into the element on displacement of the function provided by the pressure of the fluid, in a particular embodiment, can be inserted into each component of the displacement pressure of the fluid acting on the same. The air pressure can be accurate, fast, effective control, and by the insert element very good pressure regulation. Advantageously, the expandable device comprises at least a piston, a breaking, to provide an expandable insert element is proved to be reliable method.

In another preferred specific embodiment, the displacement can be inserted into the element is inclined, therefore the displacement of the contact surface of the insert element with the semiconductor crystal grains aligned parallel to the surface of, the displacement of the insertion element in the force is applied to the rear surface. This allows the insert component is suitable for the said 1st tool element provided with inclined form of the semiconductor die, or to other reasons because of the semiconductor crystal surface is inclined. To the applicability of the inclined surface of the semiconductor die, providing a uniform pressure can be cross and states surface. This makes it possible to change with a large inclination is suitable for the grain. Otherwise, the surface will "relatively high" part of the high pressure is applied, the resulting from the damage of the semiconductor die, the semiconductor die to the surface of the part of the "relatively low" form a low pressure.

In a particular embodiment, the method further includes on the semiconductor crystal and the displacement between the insert element the steps of providing the plastic film. The plastic thin film of the semiconductor die to improve the cleaning of the surface area of.

In another particular embodiment, the expansion device of the at least one deformable element is inserted into the movable element, this in certain applications of the expansible device starts permits majority of the insertion piece. In fact, the method can be adjusted very fast, in order to deal with another arrangement of semiconductor products. Efficient is, the deformable element comprises a flexible material, for example, silicone resin material.

In another specific embodiment, the flat panel of the device around the center point of the inclined, the displacement of the two or three can be applied on the insert element and of substantially equal strength, this can be proved in processing most of the small-sized semiconductor products of the arrangement.

The invention is further concerned with a method for packaging semiconductor die, the method further comprises the following steps:

-In the inserted into the displacement of the element to the surface of the semiconductor die after the applied force on the area, is introduced into a liquid state in the packaging material to said space;

-Monitoring the pressure in the space;

-By the displacement of the force exerted by the insert element adjusted to the predetermined force, the predetermined force and related to the pressure in the space; and

-The packaging material from the liquid state to the solid state.

The invention is still further of the semiconductor die carrier loading the method, the method further comprises the following steps:

-On the carrier to provide the semiconductor crystal grain, in the carrier and between the semiconductor die with adhesive material;

-Stated 1st tool part is provided in the steps of the semiconductor die, in the 1st tool part is provided on the of the semiconductor die with the carrier; and

-In the displacement of the insert element the force exerted when adjusted to the predetermined force, the material hardens the states mounts.

In another aspect, the invention is compared with the corresponding semiconductor die package or carrier the loading apparatus, the apparatus including:

-1st tool part, the 1st tool part is constructed and arranged to support multiple (more than one) semiconductor crystal grain;

-2nd tool part, the 1st and 2nd tool part is arranged, thus allowing for the 1st and 2nd tool part of the joint, and the 1st and 2nd define a space between the tool parts, the synergistic effect of 1st tool part on the supporting the semiconductor die, the semiconductor is disposed in the space of the grain, and the 1st and 2nd one of the tool parts can be inserted into the element includes a plurality of displacement, the displacement is inserted into the element is constructed and arranged to allow the displacement of each insertion element to provide 1st tool part on the semiconductor crystal surface pressure is applied to the region, the associated with the 1st tool part the position of each position can be with one or more of displacement of the associated insert element;

-Insertion element power-monitoring device, the monitoring device is constructed and arranged to control the displacement of each of the forces exerted by the insert element; and

-Adjusting device, the adjusting device is constructed and arranged to be displaceable by each force exerted by the insert element is adjusted to a predetermined force.

In a particular embodiment, the semiconductor die package device includes:

-Filling device, the filling device is constructed and arranged to the liquid state of underfill material is introduced to the space in between; and

-space pressure monitoring device, the monitoring device is constructed and arranged to monitor the pressure in the space.

In another specific embodiment, the apparatus includes a power-controller, is configured to the proportional-integral-differential control of the displacement by the force exerted by the insert element, the representative of PID control has the set point of the predetermined force.

In another specific embodiment, the apparatus comprises an expansion device and the fluid flow device, the expansion device for the displacement of the insert element, and the fluid flow device is disposed in the expansion device to provide fluid pressure, to provide from each can be displacement of the force exerted by the insert element. The expansion device can include a piston, at least one of the breaking of the film.

In a further specific embodiment, the displacement is inserted into the element is constructed and is arranged to be inclined, therefore can be displacement of each of the insert element of the contact surface are connected with the semiconductor products is aligned parallel to the surface of, the displacement of the insertion element for exerting forces on said surface.

In a particular embodiment, the expansion device comprises a deformable element, the deformable element is constructed at least one can be disposed in order to effect the displacement is inserted into the element. The deformable element may include silicone resin material.

In another particular embodiment, the expansion device comprises a flat plate, the flat plate is constructed and arranged in two or three can be displacement of the insert element, and around the central point of the flat plate can be inclined, so that the each insertion element exerts substantially equal forces.

The invention also and semiconductor products, the semiconductor products according to the method of the invention, the semiconductor die package or carrier load processing is made by the method.

WO2007/150012A and EP1939926A the majority of the adhesive refers to the apparatus of the semiconductor substrate. However, these open invention with the two single semiconductor wafer relating to adhesion to each other, a very large area of base plate. By these to the Publication of the semiconductor wafer is associated with the proposed solution of the problem, and according to this invention used for die package or carrier loading of the method and apparatus provided by the associated with the solution of the problem is very different and not relevant manner.

Description of drawings

The majority of this invention further characteristic and advantage by the non-limiting and non-platoon the way he specific embodiment, the description of the present invention more clearly. These specific embodiments and non-structure, in order to in order to limit the concept of the protection. Prospects for the concept of this invention can be in various other specific embodiments. Now states follows -schema describes the reference the most specific embodiment of the present invention, wherein similar or identical reference symbol Callouts similar, the same or corresponding parts, and wherein:

Figure 1 shows an external mold, the outer mould with displaceable insert element, the semiconductor crystal grains of the outer part of the 1st and 2nd in the space between the, in order to carry on the semiconductor die package;

Figure 2a and Figure 2b show Figure 1 the displacement can be inserted into the element respectively in recover the insertion position for the majority of the details;

Figure 3 show Figure 1 and the section 2 of the insert element of the majority of the details with the expandable element, said expandable element acts on the displaceable on the insert element;

Figure 4a, Figure 4b and Figure 4c show the majority of the semiconductor die containing carrier, the top surface of the semiconductor die is inclined (Figure 4b and Figure 4c) or not inclined (Figure 4a);

Fig. 5 schematic view showing fluid flow device, in order to exert pressure on the insert element;

Figure 6a, Figure 6b and Figure 6c display semiconductor die package method most of the application instance;

Fig. 7 display used for carriers adhesion method of the two-part tool, between the two tool parts with multiple semiconductor die;

Figure 8a and Figure 8b display according to the invention most other specific schematic view of the embodiment; and

Figure 9a and Figure 9b are respectively displayed according to the invention another specific embodiment, from the side of and above the schematic view.

Mode of execution

Figure 1 in the majority of semiconductor products displayed in 10 of the encapsulation use in the method 100, the semiconductor product 10 is or comprises a plurality of semiconductor crystal grain. The graphic display for part of the (outer) 1st tool 110 and 2nd tool (outer) portion 120 of space between 130 to provide the semiconductor product or grain. In the illustrated embodiment, the semiconductor carrier grain product 10 including disposed on carrier 20 of the grain 11, in the grain and 11 with the carrier 20 the majority electronic contacts (not shown) provided between the majority of the contact wire 12. In the outer mould part 110 and 120, the carrier 20 with the semiconductor product 10 open space between 130 to provide the packing material of the liquid state, to the semiconductor product packaging, the semiconductor products are made by grain, and the part of said carrier. The introduction of the liquid encapsulation material, the liquid sealing material to solidify to provide the semiconductor products and/or grain of the final package. Packaging method and corresponding apparatus is it knows, it is no longer further discloses. Figure 1 further shows the external part (tool) 2nd 120 products and with the semiconductor thin film is provided between the carrier 121, the encapsulated material in order to avoid stick to the outer mould. Before the provision of the semiconductor products, the tool part 110,120 use one or two thin film. The thin film preferably an extendable film, for example, of the Teflon film.

The semiconductor product can include the use of different semiconductor made of the various product types. Can include chip, a power supply IC, sensor, flip-chip memory (MEM), light emitting diode (LED), like, and combinations thereof. bare crystal grain of the semiconductor product can be, but can also be provided on the base plate or carrier grain, in order to provide the semiconductor product. Generally speaking, the semiconductor product including the use of various kinds of semiconductor technology of oxygen SOI waferSIMOX SOI and the like is made, or from the wafer, and so on the separated grain, such as for example, by implantation, chemical vapor deposition, etching projection technology, like.

Figure 1 further display and providing said 2nd tool part 120 insert the element 200. The insertion element 200 is displayed with the semiconductor products in 10 the grain 11 contact, between the same with the thin film 121, providing the insert element 200 in the semiconductor product to provide an open area or window. The insertion element 200 in the semiconductor product 10 exert pressure on, and the pressure is carefully selected. Too high a pressure may damage the semiconductor product, and excessively low pressure may make the packaging material to enter to the semiconductor product from the insert element between the (thin film), caused by the so-called extrusion and leakage.

The insertion element (referred to as inserts or short) can be substantially in perpendicular to the semiconductor crystal grain and the insert 200 displacement in the direction of the contact surface, in Figure 1 the direction in the vertical direction, and to allow of the insertion piece by the applied forces and pressure (per unit of surface area). Fig. 2a displays the 1st and 2nd tool part 110,120 before the joint together with the insert 200 position. The insert 200 is located in the 2nd tool part 120 are in the retracted position. Fig. 2b displays the 1st and 2nd tool part as shown in Figure 1 the joint together. The insert 200 with the semiconductor crystal 11 contact, between the same with a thin film 121. Can basically two ways from the Figure 2a into the state of fig. 2b state. A way of taking into account the 1st and 2nd the first tool part of the joint together, and then with respect to the 2nd tool part displacement of the way of the insertion element, the insertion piece in contact with the semiconductor die. 2nd way 2nd take into account the relative to the first tool part displacement the insert, so that the insertion piece is projecting from the 2nd tool part. Furthermore, the 1st and 2nd tool part of the joint together. In the 1st and 2nd contact before the tool part, the insert will have contact with the semiconductor die. When the 1st and 2nd contact with the tool part of the joint together, the insert will thus moved back to the 2nd tool part.

The configuration of the displacement of the insertion element 200 can form a kind of inclined moving, the grain with the semiconductor is to be contact with the surface of the insert surface, with the can be aligned on the surface of the semiconductor die. For this purpose, provided with a convex, radiused and/or punctiform end of middle component 300, contact with the insert element, allows the insert 200 with the said intermediate element 300 inclined contact point of the. The insert 200 and the intermediate element 300 is limited by the movement of the said 2nd tool part 120 and the intermediate flat plate 320 of the recess 310, such as the section 4 as shown in the Figure.

The intermediate element 300 by the displacement of the expansible device 400 drive, this further in Figure 3 in the display. The expansible device 400 comprises a piston 410, the piston 410 will be piston block 420 in the mobile. In the piston 410 and the piston block 420 provided between most of the X-ring 430 of the form of seal. The piston block 420 in the piston 410 is arranged above the fluid chamber 440, to the piston 410 application of fluid pressure. The fluid pressure through the intermediate element 300 to the insert 200 is applied, and thus applied to the semiconductor product 10 on. The fluid can be air, through the fluid flow device 500 fluid channel 510 is supplied to the flow chamber 440. The expansion device may include a breaking, because the states expands and contracts the pouch the result of the applied fluid pressure, causing the expansion or contraction states expands and contracts the pouch.

Fig. 3 display multiple displaceable insert element, each of which is associated with the 1st associated with the location of the tool part, is used for positioning the semiconductor crystal grain. The 1st tool portion suitable for supporting multiple semiconductor crystal grains, its general can be the integrted in certain larger semiconductor products hundreds of semiconductor crystal grain. The method and the corresponding apparatus allows very high yield, each time many crystal grains can be processed. Through the insert and keep open the grain surface area is 0.2 to 20 square millimeters of size. Displacement of the insert can be applied to for example the pressure of 1 bar, 5 bar to several dozen or even hundreds of a size, for example 100 bar. The temperature can be from several tens of degrees Celsius range of several hundred degrees Celsius, for example at 300 degrees.

Figure 4a, Figure 4b and Figure 4c show semiconductor products 10 of various configuration, the semiconductor product 10 may including the fact that the carrier 20. Figure 4a shows a more or less ideal situation, including the states the crystal grain the semiconductor products 11 and its bottom the top surface of the surface is parallel to and, therefore, the top surface of the tool component with the 1st 110 parallel to the contact surface. The height of the top surface of the semiconductor die in the 1st Ha the contact surface of the tool component more than the height of the specified. Figure 4b shows another kind of comparable configuration of the semiconductor products. Its top surface is inclined, and the height of which Hb1 and Hb2 states the low side in the height of the reference height is not equal to the all Ha. Figure 4c shows another grain 11 configuration, the adhesive material 30 adhesion to the base plate 20. Because non-uniform to provide the states mounts and the material, therefore, the semiconductor product 10 is not parallel to the top surface of the 1st tool part 110 of the contact surface, and the two height Hc1 and Hc2 Ha are not equal to the reference height. The insertion element 200 will apply to Figure 4a, Figure 4b and Figure 4c is shown in the configuration, the semiconductor products in the top surface of the uniform predetermined pressure is applied. The semiconductor product which allows a 100 mm the height of the size of the inclined admissibility.

Figure 5 shows the fluid flow device 500 a schematic presentation. Factory air supply to provide air conditioner factory 540, and then utilize the booster 550 form, for example, factory air pressure approximately eighteen times higher pressure. Then the fluid (air) through the fluid channel 520 to main valve 565 and the proportional-integral-differential (PID) pressure controller 560, said PID pressure controller 560 control the main valve 565. In the 1st and 2nd in the space of the outer part to provide composite pressure sensor 590, in order to monitor or the package in the space the pressure of the composite material. The pressure sensor 590 signal is transmitted to the system controller 580. The system controller 580 providing said PID pressure controller 560 the fluid passage 510 and the fluid chamber 440 of the fluid (air) pressure set point.

The fluid passage 510 and the fluid chamber 440 by the pressure of said PID pressure controller 560 (including pressure sensor) monitor, is also sent back to the system controller 580. Further use of the system controller 580 setting said PID pressure controller 560 proportional, integrating and differential parameter, the parameter is used for adjusting the main valve 565, in order to set the the fluid flow rate. Allow certain fluid from the fluid channel 510 through adjustable needle valve 570 to leave, because the fluid can be through the adjustable needle valve 570 leave from the flow chamber, and can reduce the flow chamber 440 pressure setting in.

The flow chamber 440 determines the fluid pressure in the plug-in element 200 applied forces. The insertion element 200 is proportional to the applied force the flow chamber 440 in the pressure chamber. Monitoring the flow chamber 440 therefore also the pressure in the monitoring by the inserted element 200 of the forces applied, and therefore monitoring the pressure exerted on semiconductor products. Said PID pressure controller 560 is therefore only as a kind of the under the control of the PID, control by the insert 200 of the force exerted by the PID pressure controller. The pressure of the flow chamber, and can be inserted into the so that the forces of displacement of the member applies to the field of real-time monitoring and adjusting the frequency, the frequency bandwidth of the size of the is several hundred Hz can be, for example, 200 Hz, but if necessary can also be a lower or higher frequency bandwidth.

Figure 6a embodiment in display applications. In 1st of the outer part 110 on the semiconductor product is provided that includes crystal grain 10, and the insert member 200 is applied to the semiconductor products force F1, in the semiconductor products caused by the pressure is applied. Then utilize the (not shown) liquid encapsulation or composite material filling the outer part of the 1st and 2nd 110,120 and the insert 200 space between 130. Generally speaking the encapsulated material in order to most pill provides, the introduction of the pill to the space 130 is melted before. The need for the forces F1 to provide a predetermined pressure in order to keep the product 10 grain top side open and clean. The use of the composite material filling the spatial 130 during the period, the composite material will in the insert 200 increase the pressure is applied, its form a composite force FC, this will offset the force F1. By the insert therefore exert extra force F2, in order to keep in the the product 10 the fixing pressure is applied. Similarly, in the composite (package) during material hardens, usually the composite pressure will change. So, the composite pressure sensor 590 (not in Figure 6a in shown, but shown in Figure 5 in) measuring the pressure of the composite material, and is transmitted to the system controller 580, in order to offer the value to states of the correction set pressure PID pressure controller 560. Also the pressure in the space by said pressure sensor 590 to bandwidth real-time monitoring, the frequency bandwidth can the fluid chamber 440 compared with in the frequency bandwidth of the pressure measurement. By the insert 200 the grain of the semiconductor products imposed on the power is set, by the insert 200 is applied to said product space pressure exceeds the of the compound pressure, for example, more than in the space of the composite pressure 1-20%.

Figure 6b shows another application example of the in. In 1st of the outer part 110 on the spatial 130 provide semiconductor products in 10, the semiconductor product 10 includes a mounting for the radiator 50 IC the power supply. The insert 200 is used for the availability of the radiator 50 the product 10 the predetermined pressure is applied (in the absence of the composite materials is composed of a force F1 to provide). In order to offset to said space by filling 130 formed by the composite material in the pressure effect, by the insert to exert additional forces F2, because again by the same adjusting the expandable device 400 in states influence of the pressure of a fluid.

Figure 6c display semiconductor products, the semiconductor product includes a sensor crystal grain 11, the sensor crystal grain 11 by the adhesion material adhesion to the carrier 20. 1st similarly in states of the outer part 110 to provide the product, during the packaging process, and the insertion piece 200 pressure is applied to said products. states mounts the material of the composite material can be provided to the open space. In this embodiment the composite material will provide the composite pressure, the composite pressure by the insert for the additional force F1 strength F2 offset, by the insert on the semiconductor product 10 to apply a fixed on crystalline grain of the net pressure.

Fig. 7 display two-part tool, in order to utilize adhesive material 30 in carrier 20 fixed on the grain 11, like is fixed on the guide frame. This forms the method disclosed above can be utilized with the device of the other package (packaging) a semiconductor product. states mounts by the process can be a kind of sintering process, wherein on the carrier 20 with the grain 11 provide agglutination paste between. The stated agglutination paste may include pure silver (Ag) particles, the particles when during a predetermined time interval under a predetermined pressure when heated to a predetermined temperature of the variable conversion is the pure silver layer. Interconnect to form a silver particle pore structure, which is also interconnected to the semiconductor product crystal grain and the base plate. Generally speaking, the agglutination paste may include other conductor, as another kind of metal, such as copper (cu). In the grains can be oriented toward the surface of the substrate on a large scale, or even its complete range, or for example, in the range of choice of the material states mounts provided on, for example, to provide (local) electric conductivity and/or thermal conductivity. In the adhesion or the sintering process, the pressure exerted by the insert element with the grain or related to the temperature of the semiconductor products, in the semiconductor is inserted into the displacement of the power element is applied. For example, can be set with the semiconductor product or grain temperature-dependent pressure curve, for example, the temperature of the grain has been reached at 130 degrees before, the maximum set pressure is applied.

In order to provide the predetermined pressure, the 1st tool part 110 including the crystal grain is provided on, the substrate and the states mounts the material of the semiconductor product. In the 1st tool part 110 can provide a displacement of the insert member 200 of the 2nd tool part 120. Then utilize the disclosed method for the encapsulation of the equivalent method, by the insert 200 to the predetermined pressure to force the grain. During heating of the stated agglutination paste , by the insert and by the monitoring of the pressure exerted is in need. By the insert applied pressure generally between 1-150 pakistani, for example 40 bar, this will as required for the particular application. In fig. 7 in the 1st and 2nd tool part shows in states 110,120 in the space between the most provided with multiple semiconductor products of the crystal grain, in order to carry on batch processing. Each semiconductor products has a single associated insert. From each of the insertion piece by the pressure exerted by the overall maintenance and monitoring. Each insert itself such as the above-mentioned reference view 1 to fig. 6, the disclosed, the its associated adjusting becomes in the height of the semiconductor crystal grains with the inclination. With most of the crystal grain of the three semiconductor products are an example of the display for different height and inclination. Can adapt to 100 micron scale the size of the differences in height and/or slope, such as a 400 micron.

Fig. 8a schematic display other in a specific embodiment. The graphic display disposed on the 1st tool part 110 with most of the crystal grain on the multiple semiconductor product 10. Each of the semiconductor products can be associated with the displacement of the insert member 200. Only for each of the semiconductor product display insertion piece, which can be for each product application more than one insert. As disclosed by the embodiment of the previous specific general, the piston component 410 in the insert 200 force is applied. The elastic and/or deformable element 350, like deformable silicone resin sheet wheat is disposed on the piston element 410 and multiple displaceable insert 200 between. The configuration can also be in order to make the flow chamber pressure directly acts on the elastic/deformable element 350 on, but does not need to be fixed in piston element. The said resilient/deformable element then as the class the piston element. In another configuration, the elastic/deformable element 350 the thin-film is arranged, as shown in Figure 8b as shown, the external circumference of the film is attached (directly or indirectly) to the 2nd tool part 120. The elastic and/or deformable element allows adjustment of an insertion piece each of the semiconductor products association of the crystal grain to the height of the the inclined, therefore can be substantial by each insert to exert equal forces on the products with uniform pressure. The individual insert 200 of the joint the expandable device of the elastic and/or deformable element 350, allows adjustment of the height of the individual semiconductor products for the inclination change. Figure 8a and Figure 8b display the resilient/deformable element has due to the strength of the insert formed by applying the majority of the dent. The insert 200 additional to the resilient/deformable element 350, the stated elastic/deformable element 350 is in a not yet in the diagramme display but has been aware of the method the additional to the piston 410.

In the Figure 9a and Figure 9b still schematic display another specific embodiment. The diagramme display located in 1st tool part 110 with most of the crystal grain on the majority of the semiconductor product 10, each product has related expandable insert 200. The insert 200 is connected to the plate 360, the plate 360 can be inclined with respect to said insert. The insert 200 is therefore the top with a rounded corner, but the tilt can also be realized by using another way. The plate 360 further connected to the piston 410. Connected to the piston is also so that the flat-plate 360 can be on the piston inclined. In the actual embodiment, this can be a and Figure 2a, Figure 2b and Figure 3 can be compared with the method in the. In the actual specific embodiment, relative to said middle element 300 speaking, the flat panel 360 (and the insert 200) is sealed into said 2nd tool part 120 in. The piston to is connected to the central position of the flat plate. And not shown the insert and the piston is connected to the flat plate, but it has already been noted. Through the flat plate 360 to the insert and connection configuration of the piston, the plate will be inclined to use, therefore is applicable for the semiconductor product of the height variation, each semiconductor products and to exert substantially equal forces. The insert is connected to the flat panel can be further inclined in the insertion piece the use of, the semiconductor products to be applicable to all kind of inclination change of.

Already discloses various embodiments, wherein the 1st tool part for the bottom tool part, on the 1st tool part is provided with a majority of the semiconductor die or the majority of the semiconductor die includes a plurality of semiconductor product, and wherein said 2nd tool part to the upper tool part, the 2nd tool part is provided with a plurality of displaceable insert element. However, provided with said grain of the above 1st tool part can also be the upper tool part, and the lower tool part are provided with displacement of the insert element of the said 2nd tool part. In other specific embodiment, the 1st tool part including the displacement is inserted into the element, and is configured to support the semiconductor crystal grain (or with the semiconductor crystal grain of the semiconductor product) the two. Generally speaking, the 1st tool part is the bottom tool part, on the specific embodiment, the offer of the crystal grain is face down on the carrier is disposed. Furthermore, the 2nd tool part is a closed tool part, to the joint when the two tool parts, of the crystal grain the arrangement states space provided. When already reading disclosed with the diagramme after content, technical personnel to the field of the invention and the various other specific embodiment will also be clear, its all fall with the accompanying of the present invention the concept of request in the right.