BONDING APPARATUS, BONDING SYSTEM AND BONDING METHOD

, An, embodiment of a, bonding apparatus, a, bonding system, and a bonding method disclosed. in the present invention will be described in detail with reference. to the accompanying drawings in detail, but the present invention is not limited, to the embodiments shown below.

Summary-A. (Biol.1 A.A.)-A.

Construction of <1. two >dimensional system

First, the configuration of the bonding system according, to 1 the present 2 embodiment is described. with 1 reference to FIGS . 2 . X, Y Z, Z.

To this 1 embodiment of the present embodiment, the (1) bonding, system two (W) according to the present embodiment 2,) and, the (G) bonding system, respectively (,) are bonded to each. of the two substrates to be processed and bonded to (S)(the glass substrates (refer to the reference numerals in the following descriptions, for example), and then the polymer is bonded to the glass substrates (refer to the bonding (T) system layers of the two layers (A) and (B), respectively.

In the, following 2 description, a plate, surface on (W) the side bonded, to (G) the glass substrate P (S) is referred to as a '(Wj) bonding surface', (Wj) and a plate surface on (Wn) the side opposite. (S) from, the bonding surface is referred to (G) as a 'non (W)-bonded surface', and (Sj) a plate (Sn) surface, on (Sj) the opposite side of the bonding surface is. referred to as a 'non-bonded surface'.

On the other (W) hand, when, the processing to be processed is carried out by the bonding surface of, the bonding surface of the processing (Wj)-to- be-processed (W) substrate, the processing-to,(Wn) be-processed substrate. to be processed can be processed to be processed by polishing treatment, and then processed to be (S) processed to be processed into the processing-processed substrate, to be processed, for example, by polishing treatment.

On the, other hand, in (S) the, case of a substrate having a diameter which, is approximately the same as that of, (W) (G) the two-to-be-processed substrate one, the glass-base (W)-base- base-substrate-supporting-substrate is a substrate having a diameter which is, approximately the same. as that of the two-to-be-processed substrate one.

As 1 shown in the figure, the (1) two,half-(2) loading, 1 unloading station (3), the two (4)-loading. unloading station, the first and the second-carrying-out station 1 (2), two, and (3) the, X (4) first and. the second carrying-out station two are integrally connected to each other in this order in the two-axis forward direction and the second-to-carry-out station two, and the two-stage two

For example, in (2) the, place (where the, 25 cassette) is placed in a horizontal state Cw, Cs, Ct, for example . the loading/(2) unloading, station may 4 be disposed in (21) a row in which. the two cassette (21) deployments, are disposed (W) in a row Cw, for (S) example, in Cs the loading/(T) unloading station, Ct and a cassette. for holding the substrates W to be processed may be disposed in the loading/unloading station (the loading/unloading station apparatus, for example).

It is, also possible (21) to determine, the number of the. two, cassette, 4 batches, and the number 2 of the two cassette batches, in addition to one of the two cassette layouts, for example, in the case of the two cassette deployments described above, for example, in the case (21) of the two cassette deployments (in U.S. Pat. It is Ct possible to dispose a cassette, for recovering a, substrate from which a problem arises, for example, in the case of the case of the case where. the cassette is disposed.

The 1 transfer path (3) of, Y the transfer path of (31) the, transfer path (31) is between the transfer path 1 of the (32) transfer path. of 1 the transfer path of the transfer path of the transfer path (32) and the, X transfer Z path of, the (21) transfer path from Cw, Cs, Ct the transfer, (4) path 1 of the transport (41) path of the transport path of the transport path (S) (W), (T).

The bonding station (4) two, includes 1 the (41) first, and 2 second transfer (42) units,the, first and (4) second, transfer areas (G1), and the first (G2) and second. transfer areas, respectively, and the first and second bonding stations, respectively, and the first and second bonding stations, respectively, and the first and second bonding stations, respectively, and the first and second bonding stations, respectively, and the first and second bonding stations, respectively, respectively.

In 1 the (41) transfer, sections 1 of the (3) transfer sections 2 of the (42) first transport. area and 1 the (41) second, transport 1 area, (3) the transfer sections of the first transfer part and the second transfer area between the (32) 1 first transfer 2 (42) 2, area and the second (420) (W), transfer (S) area (T), respectively, are disposed between the first and second transfer areas of the first transfer area and the. second transfer area, respectively, and the second transfer area of the first transfer area of the first transfer area (the second transfer area of the first transfer area.

In 2 the transfer (42) area, 2 the transfer (420) of the. substrates 2 to be (420) processed, X is carried out Y between the first and Z second transfer units and between the first and second transfer units, the first 1, and (G1) (41), second transfer units (G2), (W), (S) between the (T) first and. second transfer units, between the first and second transfer units, between the first and second transfer units, the first and second transfer units, respectively, and the first transport area (the second transport area of the first transport area.

The coating/(G1) heat treatment blocks and (G2) the, bonding 2 treatment blocks (42), respectively, are disposed. to face each other with a transfer area between the first and second transfer areas of the first and the second transfer areas, respectively, between the first and second transport areas of the first and the second transport areas, respectively, respectively.

In the coating (G1) and, 2 heat treatment block (43), the two coating devices and, the 2 one heat (42) (44) treatment device (.one heat (43) treatment, apparatus, (W) respectively) (Wj) are arranged (G) next to each, other in (44) the, vicinity (G) of the transfer areas of the two substrates, and the first and second heat treatment apparatuses (the first and the second (W) heat treatment apparatuses.) are arranged side by side with respect to the processing target substrates (A) and (B).

In the bonding processing (G2) block, 4, the two (45) bonding apparatuses 2, the (42) two bonding apparatuses,and the (45) two bonding apparatus two (W) are arranged side (S) by side adjacent. to the first (45) and second transfer regions, and the two bonding apparatuses (the two bonding apparatuses, as described above, may be bonded to each of the two bonding apparatuses, and will be described later in detail.

For example, when (1) the control device (5) ID is. stored in (5) the, storage unit (1), the control. device may store a program, for controlling (5), various processes, such as a two, bonding process, to control the. operation of the two-stage control device (1), and control. the operation of the bonding system by reading and executing the program stored in the storage unit.

On the, other hand, since such a program is recorded on a, recording medium which can be (5) read by one computer,and installed in a storage unit, of the control unit in the (FD), storage medium (CD), the (MO), program may be. installed in a storage (HD), unit of the control unit (e.g. a hard disk drive or the like).

In the bonding system described (1) above, the 1 substrate processing (3) target substrate 1 P is (32) taken, out of (21) the processing target Cw substrate P at the position of the transfer area of the first transfer (W) area, of (W) the first (41) transfer. area 1, (W), (Wn) and the, processing target. substrate is transferred to the first transfer unit (the second transfer unit # STAT1 through the second transfer area of the first transfer area of the first transfer area.

For example 1, (41) the processing target substrate (W) P, transported 2 to the (420) first transfer unit 1 ((41) the first, transfer unit (G1) (the first (43) transfer unit . and (43) the, second coating apparatus, and, the second coating apparatus, (W) the first (Wn) and second coating. apparatus, and (43) the, first and second coating (W) apparatuses (the first (W) and the (Wj) second coating apparatus (G), and. the first, and second (W) coating apparatuses, respectively, (G) are disposed. on the bonding surface (Wj) of the processing-to-be-processed substrate one by one of the first and second transfer units (the first and second vacuum units (A).

Then, by (43) heating the substrate (G) to be processed, in the (W) atmosphere, held 2 in the (420) inert atmosphere, the (43) processing target, substrate is (44) heated to. a predetermined (44) temperature, for, example, on the upper temperature (W) by means of (G) the first heat-treating apparatus, for (G) example, at a. predetermined temperature, for (W) example, on (44) the upper-temperature, range, for example, at room temperature, for example.

After the heat (44) treatment is performed by the, heat treatment (W) apparatus, the 2 two-(420) to-be-processed substrate is carried into and carried into the first processing apparatus (, the heat-treating device one by one of the first and second transfer apparatuses, and carried into the two-(44) stage MST one-to-one,to-be-(45) one-to-be.one-to-one-device-one.

On the, other hand (S), the 1 first and (32) second glass substrates Cs are taken out 1 by (41) the transfer, apparatuses of 2 the transfer (420) apparatuses of the 1 first (41) and the second transfer units, and. are transferred to the transfer units of the transfer units, and the transfer units, respectively, from the first transfer units and the second (45) transfer units, respectively, and are loaded into the bonding apparatus (the second transfer unit one).

Then, (W) when a substrate (S) to be processed (45) is carried, into the (45) bonding apparatus, a (W) bonding treatment of (S) the substrate to be. processed and the glass substrate P is carried out, by (T) the two bonding apparatus . (T) two, 2 and (420), then 1 the two (41)- stage Ct 1 (32).

Construction of <2. two >stage device

Next, a configuration of (45) the two, bonding 3 apparatus two will. be 3 described with reference (45) to FIG. # in relation. to the configuration of the bonding apparatus described with reference to FIGS.

The invention is also shown 3. As shown, in the figure, (45) the, first and second bonding (50) apparatuses,such (50) as the 2 first and (42) the second, substrates, (W), are disposed (S) on the side (T) surfaces of the (51) first and. second transport (51) areas, of the (first and) second processing. chambers, respectively, and the first and the second processing chambers (the first and second processing chambers (A), respectively, are disposed on the first and second transport areas of the first and second processing chambers (the first and the second processing chambers (A), respectively, respectively.

In the (50) case of, providing (50) the inner surface of (D1) the inner wall (D2) of the processing (52) chamber, the inner. wall (52) surface of the, processing (52) chamber, and the (W), inner surface (S) of the inner (T) wall of the (53) processing chamber, B and (53) the, inner wall of the processing. chamber, respectively, (51) may be provided in (D1) the inside (50) wall of the. processing chamber, or may be provided in the inside wall of the processing chamber (the inner wall of the processing chamber (the inner wall of the processing chamber).

The pre-(D1) treatment, area is (45) provided with a transfer unit (W), that performs (S) the transfer of (T) the substrate-to (60)-be-processed substrates to the substrate (51)-processed substrates and the superposed substrate to be processed between the outer and outer surfaces of. the first and second bonding apparatuses (the first and second bonding (60) apparatuses, respectively. and the transmission parts (A) and (B).

The transfer (60) unit, which (61) includes the (62) transfer arm. M and (61) the, support 2 pin, (420)(is 1 disposed) at a (62) position between the transfer (W), arm and (S) the support pin (T), for example . (62) between, the, first 3 and the, second transfer (W), arms ((S) refer to the (T) first and. the second substrates, for example, between the first and the second transport units of the first and the second transport units of the first and the second transport units, respectively, between the first and the second transport units (see FIGS.

For, example (60), the first transfer, unit, 2 the second, transfer unit (W), the (S) second transfer unit (T), the 2 first transfer unit, the. second transfer, unit, (60) and the second transfer (W) unit may be (S) disposed in, the second transfer (60) unit (60). (T), (W) (S) (60).

For example, (D1) a Y reversing unit (which) inverts the front surface of the substrate, to be processed, for example, is provided, on the counter-input (53) half of the pre-treatment area, for example, the (W) half-axis of the (70) pre- treatment area (the half-input half-output part).

The inversion (70) unit, which (W) includes a holding (S) arm that sandwiches the two or (71) more substrates . and (71) holds, the glass (substrate 3 one X, and) is movable around, a horizontal axis, and is movable (X around a horizontal Y axis,) and is movable (Z in the) horizontal direction,the horizontal direction, the horizontal direction, and the horizontal direction, respectively, in the horizontal direction and the horizontal direction, respectively.

By detecting, the (70) position, of the (W) notch portion in (S) the position of the notch portion of the. glass, substrate (70) or, the substrate (S) to be processed (W), the position of the (72) notch portion. may, be (70) adjusted, by the (71) detection of the position (S) of the notch (W) portion, and the, position (72) of the notch portion, may be controlled by the detection (W) unit, for (S) example, by detecting the. position of a notch portion of the substrate to be processed.

On the two (D2)-Y axis forward sides of the bonding (70) area, the (90) two (60), transfer (W), parts, (S) the two transfer (T) parts, the first transfer part . (80) the second transfer (53) part, the second transfer part, and the second transfer (80) part, respectively, are provided on the two-axis forward sides of the. bonding area (the two parts by the first and the second transfer parts).

The transfer section two 2 (80) are provided (81, 82) with the. two transfer arm (81, 82) portions, and the transfer arm 2 two are arranged in two stages in this order from below in the vertical. direction, and movable in the horizontal direction and the vertical direction by means of a, drive unit, which is not shown in the drawing, and is movable in the horizontal direction and the vertical direction by a driving unit.

On the other (81, 82) hand, in (81) the, case of the transfer (S) arm one, of the (Sn) transfer arm two . for example (82), the (70) rear surface of the processing (W) target substrate, to be processed, i.e. the. non-bonded plane, is held by the transfer arm, for example, between the surface of the processing target substrate (Wj) and the surface of the processing target substrate, i.e. the non-bonded surface of the processing target substrate, for example.

In addition, a (D2) joint Y area between, the two substrates W and the (S) glass substrate P (90) to be. processed is provided on the two-axis side (W) of the two-axis areas of the first and second bonding areas, and is provided at the joint area of the joint area of the first and the second bonding areas, respectively.

As described above, when the (45) substrate, to 2 be processed (420) is transferred to the (W) transfer arm (60) M of the (61) transfer section, the (61) processing target substrate (W) is transferred (62) to the. transfer arm, M of (W) the, transfer (80) section, and (81) thereafter, the (62) processing target (70) substrate is. transferred to the transfer arm M of the transfer section, and thereafter, the processing target substrate is transferred from the support pin S to the inverting unit (the transfer arm unit of the transfer robot # ST362).

Then, (70) the position of the (W) notched, portion is detected by (72) the detection unit S of (70) the two- inversion unit, two, (W) and, the (70) direction in the horizontal direction is, adjusted by the detection unit. S of the two-inversion unit two and the horizontal direction is adjusted, and then, the. sample is rotated by the first and (Wj) second substrate-processed substrates, respectively, by the two-shift unit two.

In this case, since (W) the, processing (80) target substrate is (82) transferred to the (70) abutment joint (90) section from. the, reversing portion (82) one, to the (W) abutment joint portion of, the processing target substrate (82), the processing target substrate is (Wj) transferred to (the) abutment joint portion of the. processing target substrate, for example, by the particles adhering to the transfer arm one, for example, from being prevented from being corroded by the processing target substrate, or the like, from being prevented from being misaligned.

On the, other 2 hand, (420) when the glass substrate (S) P is (60) transferred to the (61) transfer arm, M of (61) the transfer section (S) one by (62) the first. and second, transfer apparatuses (S), the (80) first transfer arm (81) and the second (62) transfer arm (70), respectively, are transferred to the transfer arm B of the transfer unit, and then the second glass substrate P is transferred to. the inversion unit S from the supporting pin S by the transfer arm of the transfer unit two.

Then, (70) the position of the (S) notched, portion is detected by (72) the detection of the two-half-inverting. (70) part, (½) of, the (80) position of the (81) notch portion, (70) and then (90) the direction. in the horizontal direction is adjusted, and then the horizontal direction is adjusted, and thereafter, the two glass substrates are transferred from the inverting unit (the transfer arm (S) unit of the reference unit: ½) to the joint unit (S).

Substrate to be (W) processed and glass Upon completion (S) of the (90) transfer of the, bonding (90) material to the joint (W) portion of the (S) substrate one, the (T) substrate which. is to be (T) processed, is (80) bonded to the (81) transfer arm one (90) by means (60) of the first, and (62) second bonding portions of (61) the first, and the second (61) bonding portions 2, respectively (420), and then transferred to the transfer. arm M via the first transfer arm section of the second transfer section one by the first and second transfer robot two.

Combination <3. of two-part joint > parts

Next, the configuration (90) of the abutment joint 4 portion is shown . 4 with reference (90) to FIG. S of the. structure, of the abutment, joint (90) 4 portion, and the description thereof is shown, in the schematic side cross-sectional. side view of the abutment joint portion of the abutment joint portion, and the description thereof is omitted, and the description thereof is omitted, and the description thereof is omitted, and the description thereof is omitted.

As shown, 4 in the figure, the (90) first and 1 second (101) holding parts of the first (201) 2, and the second holding parts are, (101) 1. arranged above the first and (201) (W) 2 second. holding parts, and the first and the second (S) (201) 2 . holding parts are arranged at 2 the (201) upper, (101) 1 (W) side of the first and the second holding parts and, respectively, and the (S) first and the second holding parts are arranged at the upper side of the glass substrate and are held by the first and the second holding parts, respectively, respectively.

A configuration 1 of (101) the first 2 holding (201) unit, the, first holding unit (W), and the (S) second holding unit, and. the, holder 1 unit (101) of the 2 first (201) and the second holder 5a units, 5b respectively, are. shown 5a in the 1 following (101) drawings, and a configuration, of 5b the holder 2 unit (201) of the first holding unit. and the second holding unit described in the first embodiment will be described with reference to FIGS.

As shown 5b 5a in the first and second embodiments, 1 both (101) the first 2 and (201) second holding portions (111, 211) of the. first and the second holding portions of the first and the second holding portions of the first and the second holding portions of the first and the second holding portions of the first and the second holding portions are respectively provided with the electrostatic attraction unit, FIGS.

The electrostatic adsorption (111, 211) unit is provided with (111a, 211a) a plurality, of internal electrodes (111a, 211a), and each (113, 213) of the non- bonded surfaces (W) of the (Wn) two-to (S)-be-processed substrates and. the non-bonded surfaces of the glass substrates (the non-bonded surfaces of the glass substrates (the non-bonded surfaces of the glass substrates) are attracted respectively by the electrostatic attraction force generated by (Sn) the internal electrodes of the electrostatic attraction unit (the electrostatic attraction unit).

As described above, since the bonding (90) portion, P 1 according (101) to the 2 present (201) embodiment is formed by using the electrostatic, chuck as the two-agent-retaining portion, the first holding portion, and the second holding portion, it is possible to surely maintain the target (W) substrate-and-glass (S)-substrate-and-substrate-and- substrate-in-holder ratio in a reduced-pressure atmosphere.

That is, it is conceivable to use a vacuum chuck or the like for holding, and maintaining the suction maintenance by using, a negative (W) pressure; however (S), since the suction force is lowered under. a reduced, pressure environment, it is possible to reliably hold, the substrate (W) two to be (S) processed and a fall of a. fall amount of the glass substrate one.

Further, in the case of using a mechanical chuck or, the like (W) holding mechanical maintenance as a holding unit, there is a, risk of damage to (S) the (W) processing-processed (S) substrates and the. glass substrates, respectively; however, it is difficult to cause damage to the processing-processed substrates and the glass substrates, compared with mechanical chucks, and the like, respectively.

However, in 2 the (201) case where the bonding treatment is carried out under, a, high-temperature. environment (S) exceeding the heat-resistant temperature of the two, rubber pads, as (90) in the, joint portion of the present embodiment, the rubber pads may not be used.

, In, the joint system according (90) to, the 1 present (101) embodiment, 2 the (201) heat-resistant temperature of the fluororubber, which is. known to have a 300 °C high, heat-resistant temperature, (1) is, 300 °C preferable, and the bonding system according to the (S) present embodiment is subjected. to bonding treatment of the (W) glass substrate and the glass substrate to be processed in a high-temperature environment of at or higher.

In addition to the two 5b 5a electrostatic adsorption units, 1 the (101) first and 2 second (201) holding, units, (111, 211) and the first and (112, 212) the second. holding units of the first and second holding units, respectively, are provided with a vacuum suction unit, as shown in FIGS.

The vacuum adsorption (112, 212) unit, the vacuum adsorption, unit (113, 213), includes a (112a, 212a) plurality of (112a, 212a) through-(112b, 212b) holes that. are in (112a, 212a) communication, with (114, 214) the intake spaces of the intake spaces of the intake. spaces of the intake spaces of the intake spaces, and the suction devices, such as a vacuum pump, may be connected to the intake (115, 215) spaces of the intake spaces of the plurality of through-holes.

Such a vacuum adsorption unit ((112, 212) vacuum suction (115, 215) unit) sucks the non,bonded (W) surfaces of (Wn) the two-(S) processed substrates (Sn) and the non,bonded (W) surfaces of the glass substrates from. the non-bonded surfaces of the glass substrates, respectively, by using the negative pressure generated by the suction of the secondary air intake apparatus, and (S) maintains the substrate - and the glass-substrate-processed substrates, respectively.

On the other hand, the first and the second holding parts (101), 1, of the first and the (201) 2 second holding parts, respectively, are made of ceramics such as aluminum nitride,for example, and are formed of ceramics such as aluminum nitride, for example.

In addition, 1 in (101) the outer peripheral portion of the first, and (113, 213) 2 second holding parts, the first and (201) the second holding parts are (116, 216) arranged, in the thickness direction (401) with respect 2 (116, 216) to the first and (second 4 holding). parts, respectively,and the first and the second holding parts are arranged in 1 the thickness direction of the first and the second holding parts, respectively, and the first and the (402) second holding mechanisms are respectively provided in the first and the second holding parts, respectively, respectively.

The first 1 and the (401) second holding 2 mechanisms, (402) and, the 1 first (101) and the 2 second (201) holding mechanisms, respectively 1, are (401) held in 2 an elastic (402) manner by an. elastic holding part between the first holding mechanism and the second holding mechanism, and the holding mechanism of the first and the second holding mechanisms described later is described later in detail with reference to FIGS.

In addition 4 to the above,1 described (101) first and 2 second (201) holding units,the 1 first (101) and the 2 second (201) holding units 1, respectively (117), the 2 first and (217) second heating mechanisms . 1 the first (117) and, the 1 second (101) heating mechanisms, and the (W) first and, the 2 second heating (217) mechanisms, are 2 respectively (201) included in the first and the second holding. units, respectively, and the first and second heating mechanisms are respectively included in the first and the second (S) holding units, respectively, and the first and the second heating mechanisms are respectively included in the first and second heating units (A) and (B).

Since the bonding (W) treatment of the (S) substrate to be, processed is performed. in a, depressurized 1 atmosphere (101), the bonding 1 treatment of (117) the, substrate to be processed is conducted under. a depressurized atmosphere, and therefore, the second heating mechanism, which is incorporated in the first and second holder parts, is used as the second heating mechanism, which is incorporated in the first and second holder parts, and is used.

On the other hand, the two- th maintenance unit 2 (the first and second (201) sub-units' b 'and' b ' described hereinafter) will be described in Since the 1 through holes (301) or the like are formed to penetrate through the first, and second temperature detecting units . and 2 the like, it is 2 difficult to (217) install, the three-axis heater, and thus, the second heating mechanism, which is incorporated in the first holder unit, is used as the second heating mechanism, which is incorporated in the first. holder unit (201) (the second holder unit ##).

In addition, (90) the, first 1 and second (102) joint, portions 3, and (103) the, first (104) and, second joint (105) portions, respectively (106), are. provided between the first and second cooling mechanisms, the first and the second heating mechanisms, the first and second compression units, and the first and second heating mechanisms, respectively, and the first and second cooling mechanisms, respectively, respectively.

For 1 example, (102) the, coolant 1/(101) . (113)( (101) 5a 1) 1, (101) 1 (102) (W).

For example 3, in (103) the, case where the first (W) and second heating mechanisms are disposed on. the opposite 3 side from (103) the, surface 1 on the (102) side opposite to 1 the (101) surface on the side opposite to the, surface 1 on the (102) side opposite. to 3 the surface (103) on, which the first and the second heating mechanisms are. disposed, the first heating mechanism may be disposed between the first and the second heating units, and the first and second heating mechanisms may be disposed between the first and second heating mechanisms.

Further, (104) the, pressing 3 portion may (103) be disposed 1 on the (102) upper surface. of the (104) first, heating (141) device, and (142) the pressing. portion (141) may, be 3 disposed on (103) the upper surface of the first heating mechanism, and 3 the pressing (103) portion may be. disposed on (142) the, upper surface of the, first (141) heating mechanism, for, example (141), at 3 the upper (103) surface of the first. and second heating mechanisms and may be disposed on the upper surface of the first and second heating mechanisms and may be disposed on the upper surface of the first and second heating mechanisms.

Further, by (104) applying, a compression member (141) such as (a) coil spring to 3 1 the inside (103) of the one-(102) way secondary cooling device. one, the (142) compression member may press the first heating mechanism, the first heating mechanism 3, the (103) second heating 1 mechanism, (102) and the second. cooling mechanism, 3 respectively, (103) into the 1 first and (102) second cooling, mechanisms 3 and, (103) respectively, 1 by the (102) first and, second 1 cooling mechanisms (102) described in FIGS.

On the upper (105) surface, of (104) the first chamber unit part 1, (511) which will be. described, later on (142) the upper, surface of the first (105) chamber unit part. A described later, a top end portion of the first supporting member one is fixed to a lower surface of the base member one, for example, on the lower surface of the base member one, for example.

As a result (106) of moving the pressurizing mechanism, by moving the two, holding (101) (W) 1, parts (S) from the vertical. downward direction of (106) the, pressurizing mechanism (161), the pressurizing (162) mechanism, is brought (163) into contact. with and pressurized by the pressure mechanism, for example, between the pair of the pressure mechanism and the pair of the pressure mechanisms, and may be provided between the pair of the pressurizing mechanism and the pair of the pressure mechanisms.

For example, (161) the, lower end portion of the pressure vessel B is fixed. to the (161) upper surface, of 1 the two (102) cooling mechanism one, and the (105) lower end portion. of, the pressure 3 vessel B (103) is fixed (104) to, the upper surface of the secondary cooling. (161) mechanism, and the other end thereof is fixed to the lower surface of the two cooling mechanism one.

One end of (162) the, gas supply pipe, (105) which is connected 1 to (511) the gas supply pipe (161), is, connected to the pressure vessel A. through the base member and the first chamber section described later, and the other end thereof is connected to the gas supply source (A) and the other end thereof is (163) connected to the gas supply source (A), respectively.

In such a pressure (161) vessel, the (163) gas is supplied (162) from one gas supply (161) source to the inside, of the (161) pressure vessel, 1 through (101) the gas. supply pipe, and (W) the, gas is (S) supplied to the. inner side (W) of the pressure (S) vessel, so that (161) the pressure is adjusted by adjusting. the pressure of the gas to be supplied to the two glass substrates, and pressure is adjusted by adjusting the pressure of the gas supplied to the two pressure vessel two (the second and second pressures B, respectively).

On the, other hand (161), it is possible, to 1 absorb (101) the difference even if there is a difference in the degree of parallelism between (201) 2. the, first and (161) second holding parts, and the, inside of the (W) first and second holding parts of the first and. the second pressure vessels, respectively, can absorb the, difference between the parallelism of the first and the second holding (S) parts, respectively, and the inside of the first and second holding parts are uniformly pressed by the gas.

In addition, the (90) first, and second parts, (202) of 2 the 4 two parts (203) of, the cooling mechanism, the sub-parts of the pair (202), (204) 4 of the (203) cooling mechanisms (204), 2 (201), 2 (204), the 4 sub-(203), parts 2 of the (202) cooling mechanism 2, (201) the parts of. the cooling mechanism of the pair of the cooling mechanisms, the first and the second cooling mechanisms of the first and the second heating mechanisms of the first and the second heating mechanisms are arranged in the order of the first and the second heating units, respectively, respectively.

As a 2 result of (202) the, cooling fluid, 2 for (201) example, a cooling fluid of a. metallic material 2 can be (202) used, in 2 the (201) cooling mechanism of (213)(the 5b first) and second cooling mechanisms,for 1 example, (102) in the, case 2 of a (202) cooling, fluid of the first and second sub- units of the first and second cooling 2 mechanisms (201), for, example 2, (201) between the first and (S) the second. cooling mechanisms, the first and the second cooling mechanisms may include a cooling fluid of the first and second sub-units of the first and second cooling mechanisms described in FIGS.

For example 4, in (203) the, case of the 2 second cooling (202) mechanism, the first heating mechanism . and 4 the second (203) heating, mechanism 2, respectively (202), are disposed 2 on (201) a surface opposite to the surface opposite, to 2 the facing (202) surface on. the 4 side opposite (203) to, the 1 facing surface (117) of the first cooling mechanism,for example, the first and second heating mechanisms, respectively, and the first and second heating mechanisms described in FIGS.

For example (204), in 4 order to (203) adjust the height of, the first and 2 second (201) holder units, the spacers. may be (204) disposed, on the 2 lower (512) surface of the. first, and (90) second, chamber (204) units, for example, at. the lower surface of the first and second heating units, respectively, and may be disposed on the lower surface of the first and second chamber units, respectively, and may be disposed on the lower surface of the first and second heating devices, respectively, and may be disposed on the upper and lower surfaces of the first and second heating units, respectively, respectively.

Thus, the present invention is not limited, thereto. To the embodiment, (90) the, first 1 and second (102) heating mechanisms are provided such that both 1 the upper (117) and lower 3 surfaces of (103) the first, and 2 the second (202) cooling mechanisms are sandwiched by the first 2 and second (217) heating mechanisms 4 and, (203) respectively,the first, and 1 the second (102) heating mechanisms 2 may be (202) provided such that the two heating mechanisms, and the first and 1 the (101) second heating 2 mechanisms (201) are sandwiched between the first. and second heating mechanisms and the first and the second cooling mechanisms, respectively, respectively.

In relation to these points 6a, reference 6b is made to. the 6a state of the 1 state in which bending 2 occurs in the conventional cooling mechanism. of, the 6b first cooling mechanism and the 1 second cooling (102) mechanism of 2 the conventional (202) secondary cooling mechanism . and the example of the situation where warpage is generated in the conventional secondary cooling mechanism and the cooling mechanism of the first and the second cooling mechanisms described in FIGS.

As shown, 6a in the figure, in, the 1 related art (102X), in the 1 conventional (101X) art, 1 the first (117X) and second, heating 2 mechanisms are (202X) installed on the 2 lower (201X) surface of 2 the two (217X) cooling mechanisms and . respectively, and the first and second heating instruments of the first and second holding parts (the first and second heating mechanisms) are installed on the upper surface of the cooling mechanism of the first and second cooling mechanisms described above, respectively, respectively.

For this reason, in, the 1 case where (117X) heating is 2 performed in (217X) the case of the, heating 1 by the (102X) heating mechanism 2 of the (202X) first and/or the. second, heating mechanism, the temperature, difference between the first and second, cooling mechanisms and the portions of, the first 1 and (101X) the second 2 cooling (201X) mechanisms may be equal to or greater than the number. of the first and the second cooling mechanisms described in the first and the second cooling mechanisms, respectively, respectively.

Thus, in the, case 1 of a (102X) ceramic which 2 is likely (202X) to be warped in. both 1 of (101X) the two 2 cooling (201X) mechanisms, described above and the (first) and second cooling mechanisms. described above, 1 a stress (102X) due to 2 the bending (202X) of the first and the 1 second (101X) cooling mechanisms 2 may (201X) be applied, to 1 the (101X) first and 2 the (201X) second holding portions of the first and. the second cooling mechanisms and, respectively, and thus there is a risk that damage such as cracks may occur in the first and second holding portions of the first and second cooling mechanisms described above, respectively.

Thus, as 6b, (90) shown in the joint portion B according to the present embodiment 1, (102) the above-3 described heating (103) mechanism, is 2 further provided on the lower surface 4 of the (203) two cooling mechanisms described with. respect to the upper surface of the two cooling mechanisms (202) described in the above-described manner, and as shown in FIGS.

, It is, possible 1 to prevent (102) the temperature 2 difference between (202) the upper and lower surfaces of the first and, second 1 cooling mechanisms (102) and/2 or the (202) first and the second cooling. mechanisms, respectively, and (90) thus the, bending 1 of (101) the first 2 and (201) second cooling mechanisms may be. prevented, and damage of the first and the second cooling mechanisms may be prevented, and breakage of the first and second cooling mechanisms may be prevented.

As shown 4 in the above- described 1 example (101), the first (W) and second temperature detecting units 1, respectively (303), for. detecting, the 1 temperature of (102) the two,1 to-(102) one cooling-out mechanism 2 one are (302) provided on. the 1 outer peripheral (303) portion of 2 the two (302)-stage secondary cooling-mechanism. one, and the two-th temperature detecting unit (the first and second temperature-detecting units of the first and second sub,units of the first and second sub-units, respectively, are installed in the first and second temperature-detecting units, respectively, respectively.

The result of 1 the detection (303) by the 2 first and (302) second temperature detecting units, and the (5) first and. second, temperature detecting (5) units, and the first and, second 1 temperature detecting (102) units and the first and the 1 second temperature detecting units may be transmitted to the first and. second control units, respectively, and the fail-safe processing of stopping the heating by the first and second heating mechanisms, (117) or the like, is performed by the first and second control units (the first and the second heating mechanisms described above, respectively).

Likewise, 2 the (201) first, temperature detecting (S) unit, the second temperature 1 detecting unit (301), and, the 2 second temperature (202) detecting unit, respectively, are installed on the outer peripheral part of 2 the one-(202) 2 stage two (304). 1 2 (301) (304).

The result of 1 the detection (301) by the 2 first and (304) second temperature detecting units, and the (5) first and. second, temperature detecting (5) units, and the first and, second 2 temperature detecting (202) units, respectively, is transmitted 1 to the (117) secondary control unit (.the first and the second control units of the first and the second cooling mechanisms, respectively, based on the result of the detection of the detection results of the first and the second heating units of the first and the second heating units, respectively, respectively.

By providing such a fail- safe treatment 1, even (102) if the 2 warpage is (202) caused in the two cooling, mechanisms, for example, the first and, the 1 second (101) cooling mechanisms 2 described (201) above, the fail- safe, processing may be prevented, and the 13 fail-safe. processing may be prevented, and the fail-safe processing may be prevented, and, the fail-safe processing may be performed by using the fail-safe processing described in detail below.

In addition, 1 6a, as shown (102) in the 2 above-(202) described embodiment, the first and, second cooling 1 mechanisms (101) and/2 or (201) the first and the second. cooling mechanisms, 1 respectively, (102) are bent 2 in a (202) direction away from, the 1 first and (102) the second 2 cooling mechanisms, respectively, and, the 1 temperature (101) of the 2 outer (201) peripheral portions of the (202). first and second cooling mechanisms and the first and the second cooling mechanisms may be different from each other, as shown in FIGS.

Thus, by 1 detecting the (102) temperature of 2 the outer (202) peripheral portions of 2 the first (302, 304) and second cooling, mechanisms 1 and the (102) first and 2 the second (202) cooling mechanisms, respectively, 1 the temperature (102) of the 2 outer peripheral (202) portions of the first and the. second cooling mechanisms and, respectively, the first and the second cooling mechanisms may be detected, and thus the warpage of the first and the second cooling mechanisms may be detected as appropriate; thus, the warpage of the first and second cooling mechanisms may be detected as appropriate.

Furthermore, in, the 2 present embodiment (302, 304), it 1 is also (102) possible to 2 install the (202) two-th temperature- detecting 1-part (102)-detection-2 unit (202)-in-one 2-stage (302, 304) two (201) (101). 2, 1 (301, 303) 1.

Next, 1 a description (401) will be 2 given of (402) the above-described holding mechanism of the. holding 1 (101) mechanism, 1 (102) of the first and the holding mechanism of the above-described, first holding mechanism, and the above-described second holding mechanism described above is not fixed to the primary-secondary-secondary-secondary-element-holder-described in the first embodiment, but is not limited thereto. In a (11) state where the center position is set to, a certain degree by the crystal pin . but 1 is (101) laminated with 1 a certain (102) margin in a, horizontal 1 direction (101), since 1 the two (102) cooling mechanisms are completely fixed in, the horizontal direction, there 1 is (101) no surplus 1 of surplus (102) oil in the case of. a thermal elongation generated by the first and second cooling mechanisms, and the first and the second cooling mechanisms may be damaged.

In addition, 2 for (201), the 2 same reason (202), as 4 described above (203), the (204) two, cooling mechanisms, the two cooling mechanisms, the two cooling mechanisms, the. first, 2 the (201), second 2 cooling mechanisms (202), 4 the first (203) and the (204) second, cooling mechanisms, (11) the first and the second cooling mechanisms, the first and (12) the second cooling mechanisms, the first and the. second cooling mechanisms of the first and the second cooling mechanisms of the first and second cooling mechanisms described in FIGS.

Thus, in, the 1 case (101) of performing 2 the (201) bonding, treatment in the horizontal direction with, respect [to, the 1 two adjacent (102) parts between 2 the first and (202)] the second cooling mechanisms, the first and the second. holding parts, 1 and (101) the first 2 and (201) the second holding parts, respectively,are, arranged in the horizontal direction and, are stacked (501) in the horizontal direction with respect to the first 1 and (101) the, 2 second (201) sub-parts of the. first and second sub-parts, respectively, between the first and second sub-parts of the first and the second sub-parts.

As described above, 1 when (101) the position 2 deviation (201) occurs between the first, and second holding portions of the (S) first and second holding portions, there is a risk of being bonded in (W) a state in which the two target substrates and the glass substrates are displaced from each other in a state of being shifted from each other.

, It, is possible to prevent (90) positional displacement of the first and second (101) 1, holding parts of the first 1 (201) 2 (401) and the second holding parts (402) of, the first and the second holding 2, parts, respectively, by using 1 the (101) first holding parts, and the second holding. parts, respectively, by the, first and the second holding (201) 2 parts of the first and the. second holding parts of the first and the second holding parts of the first and the second holding parts, respectively, respectively.

The first 1 and second (401) holding, mechanisms 1 are (101) disposed between the 1 first (511) and second, chamber 1 sections (101) A, the first. and, second 2 chamber units (402), respectively 2, (201) and maintain the 2 outer (512) peripheral portion, of the first (201) and second holding units (the first and second holding units' and the first and second holding units' b ') and the first and second holding 2 units (.the first and second holding units' b') and the first and second holding mechanisms (A) and (B).

Here, a 2 specific configuration (402) of the one 7-to 7-one 8 holding mechanism one. will be described 2 with reference (402) to FIGS . 8 2 (402).

As shown, 7 in the figure, the 2 first and (402) second, holding (421) mechanisms, and (422) the, first and (423) second, holding (424) mechanisms, respectively, are provided between the first and second holding mechanisms and, respectively, and the first and second holding mechanisms may be provided between the first and second holding mechanisms and, respectively, and between the first and second holding mechanisms described by the first and second holding mechanisms, respectively; FIGS.

On the (421) outer, periphery of the base portion, (the 8 base), portion 4 may be (203) formed to have a. substantially (421) circular arc, shape in, a 2 plan view, and the. lower end portion of the second base portion may be fixed to the lower surface of the first and second chamber units, for example, at the bottom surface of the first and second chamber units of the first and second chamber units (see (512), for example, Inventeenth and Initity Heighty-Initity Heighty-Initity A. Except for, for example).

In one (422) aspect, of the present invention, one end, portion is (421) disposed above the base portion S at a predetermined 2 distance (201) from the (216) upper portion of. the base portion, and the other end portion is disposed at the upper portion of the stepped portion of the, first holding portion (the second holding portion 'C'at the upper portion of the base portion of the locking portion' C', or the like).

In the (422) opposite, surface 2 of (201) the two (216)-th (422a) step-by (422b)-part.part (422b)- part (216)-by-part of the two-part two-part, the two (422a)-coil. spring is provided at the opposite side of the two-part-part-by-part of the two-stage two

In particular, (423) the, vertical (422) pressing Z unit, which. is, provided with (423) the, pair (423a) of, the (423b) first, and second vertical (423c) compression members . (423a) is Z provided to penetrate the. proximal end (423a) portion, of the pair of the first and, second vertical pressing members, (421) and (422) .the (423a) other end portions of (423a) .the first and second vertical pressing units (the second and third shaft parts of the first and second shaft parts are connected to the first and second rotation compression units, respectively, respectively.

Further, (423b) the locking (423a) portion may. be formed (423b) to, include, for example, a, nut (423a), such as a nut, and may be inserted into the locking portion . and the locking portion may be configured to include a nut, for example, and may adjust the position in the two-axis direction by lifting it along the threaded groove formed Z in the first and second shafts (e.g. the first and the second-axis direction) of the locking portion.

The vertical compression member (423c) may, be (422) provided between the top (423b) surface of, the (422) proximal Z end portion of the. claw portion and the locking portion, and provide a force in an axial direction of the pair of the vertical pressing members between the locking portion and the locking portion, respectively.

For example (424), the supporters may adjust the horizontal degree of, the two claw (424a) (422), parts by tightening (424b) or loosening the (424) nut,in (424b) relation. with (424a) respect to the one-headless (422) volt and, for example . by tightening or loosening and pulling, and pulling the nut two with respect to the two-headed volts, respectively.

The first 2 and second (402) holding, mechanisms are configured in, the same (423) manner as described (422) above Z, and the, claw (422) section is pressed in the two-axial direction by. the pair, of the vertical pressing units, and. the pair of the claw portions S and the claw (201) 2 portions (the first and the Z second holding parts (the first and the second holding parts) are pressed in the two (201) 2-axis direction, respectively, and thus the first and second holding parts are held elastically.

It is possible, to (90) prevent, the 2 position shift (402) between the first holding part and the second holder part by the (201) 2, first and second 2 holding parts. of the first and second holding, parts, respectively, in (201) the case of, the 2 first (201) and (201) 2 the second holding parts of the first and the second holding parts of the. first and the second holding parts, respectively, in the first and the second holding parts, respectively.

In addition, 2 since the (402) claw section (422) of, the 2 two (201) holding mechanism (216) two is (422a) provided with the (422b) coil spring M, at 2 the (201) opposite surface of the stepped portion of the first holding. portion, the claw 2 portion (201) of the 2 first holding (402) mechanism can be elastically held by a smaller. contact area, thereby preventing the contact portion from being broken, for example, from being broken by the first holding mechanism of the first holding portion of the first holding portion of the first holding mechanism (the first holding portion'S ').

Further, at a (90) high, temperature environment above the heat-resistant temperature or higher of the fluororubber, (S) which is known to have a (W) high heat (422)-resisting (216) temperature, (422a) the bonding treatment, is. performed (422b) at a. high- temperature environment above the heat-resistant temperature of the fluororubber, which is known to have high heat resistance, and thus, the coil spring of the metal is optimal.

In the, case 2 of the (402) bonding, treatment 2 described (201) later to (216) be described (422) later, the, first and second holding mechanisms are formed (213) so as to come into contact with the (201) 2 stepped portions of 1 the (101) first. and second holding parts of the, first 2, and (402) the second holding parts. of the first (201) 2 and the second holding parts, respectively, and the first and the second holding parts are formed so as not to come out of the holding surface of the first holding part (S).

The first 2 and second (402) holding, mechanisms 2 are (201) the same as those of the first and second holding mechanisms, and the first and the second holding mechanisms, and the first and the second holding mechanisms, and the first and second As shown 8, in, for. example, a plurality of the outer, peripheral 2 parts (201), a (216) plurality, 3 of the 2 first and (402) second, holding 2 mechanisms (201) may be provided at a stepped portion. of the first and second holding 2 units (201), for example, in a circumferential. direction of the first and second holding units, for example, in a circumferential, direction of the first and second holding units, for example, as shown in FIGS.

In addition, the stepped difference between the first and second, holding 2 parts (201) 2 2, (the first and the (216) second holding parts (204), and the heights of the parts of the (201), first and second sub-parts (202), of the first and second sub-4 parts of the first and second sub (203)-parts of the first and second sub-parts may be different from each (13) other, respectively, between the first. and second sub-parts of the first and second sub-parts.

In this, case 2, (201) the 3 number of 2 the first (402) and second holding mechanisms and, the 2 number (201) of the first 2 and the (402) second holding 3 mechanisms, and. the number of the first and the second holding mechanisms, and the number of the first and the second holding mechanisms are not particularly limited, but is not limited to any one.

In the 4 same manner as described, in 1, the above (401)-described first 2 holding mechanism (402) described in, the 1 above (101)-described first. holding 1 mechanism, (401) the, pair 4 of the claw portions, of (411) the, first and the (412) second holding. mechanisms (411) and the, first 1 and (101) the second (116) holding mechanisms, are provided on (412) the, opposing (411) surfaces Z of the first (401) .and second, holding 1 mechanisms (101), for 2 example (201), between, the first and second. holding, mechanisms (411) described, with 2 respect to (402) the first (422) and second, holding 1 mechanisms (101) described in (116) the above-described (first and) second holding. mechanisms, described 1 in FIGS . 2 (402), 1 (101).

However, it 1 is also (401) possible to 2 further include (402) a, horizontal 1 compression (101) member that 2 is (201) configured to (113, 213) press the first holding mechanism of the first and second holding mechanisms. in the horizontal, direction 2 with respect to the first holding mechanism, for example 9, in the. case 9 where, the first and 2 the second holding mechanisms. are provided with the horizontal compression member, for example, in the case of the above-described configuration of the first and second holding mechanisms described above.

As shown, 9 in the figure, the first and 2 the second (402A) holding, mechanisms (425), and (426) the, first and the (427) second holding. mechanisms (425), Z according to the first, and second (421) variants, are. arranged on the upper surface of the base unit, respectively, and the first and second holding mechanisms may include the first and the second holding mechanisms and, respectively, the first and second holding mechanisms and the first and the second holding mechanisms described in the first and second embodiments.

A proximal (426) end, portion of the holding, X pin one) is a (rod,shaped (425) member which extends in. the (426) horizontal direction, of 2 the (201) holding pin (213), and (216) the distal (end) of the (218) holding pin. is, held (426) in contact, with (426) the retaining surface of (426a) the holding. pin, and the holding pin has a diameter larger than the diameter of the retaining surface of the holding pin.

The horizontal compression (427) member, (426) which is (426a) provided between (425) the locking, portions (426) of the retaining (pin, X and the) locking portions. of the holding pin two and the support portions, is pressed, in the (201) horizontal 2 direction, in the horizontal direction.

As described above, the first and (402A) second, holding mechanisms described (427) in the above, 2 2-described first and second holding mechanisms may further include. a pair of horizontal pressing members, and thus the positional misalignment (201) of the first and second holding parts may be more reliably prevented from occurring more reliably.

Further, it, is 2 possible to (402A) adopt the configuration in (423c) which the both of (427) the vertical compression members and the, horizontal 2 compression members (402A) are, provided in the (423c) case of the first and the. second holding mechanisms described in the present embodiment; however, the first and the second holding mechanisms may have a configuration in which the first and second holding mechanisms are not included in the first and second holding mechanisms described in the present embodiment, respectively.

In addition, (90) a, stopper for (W) preventing a large (S) positional displacement of 1 the two-to-be (101) (201)-processed 2 substrates or a large- sized glass substrate is 10a provided in 10b the outer peripheral. portion 10a of the 10b first, holding portion (W) or the second (S) holding portion, and reference is made with reference to. FIGS.

It is 10a preferable that the thickness, of the first and (219a) second, stoppers of the 2 first (201) and the (213) second stoppers formed. at the, outer periphery of the (W) holding surface of (S) the first and second holding surfaces of the, first (219a) and the second holding portions,for, example (219a), between, the first (S) and second, holding surfaces (W), of the (S) first and (G) the second holding portions, for example, between the first and second holding surfaces of the first and second holding surfaces of the first. and the second holding portions (e.g. the first and second holding surfaces of the first and second holding portions (FIGS.

In addition, as shown 10b, in the, above 2-(201) mentioned case (216), even in (13) the case of (219b) the case of. the case of the case in which the, first and second 10a stoppers formed on the first and second holding (219b) parts are arranged at (W) (W) the stepped portions of the first (S) and the second. holding parts, the first and second holding parts may come into contact (S) with each other on the first side of the first and the second holding parts (A), respectively.

On the other hand, as shown 10b, in (13) the, above (216)-described embodiment, since the head (d) part is formed. in an, oval 2 shape (201), in 2 the radial (202), direction (204) 4 with respect, (203) to the upper surface of the. first and second stepped 2 parts (201), the two parts of the, first (13) and the second (201) holding (216a) parts, are (formed) in an, oval 2 shape having a diameter in, the radial. direction of the 2 first (201) and second holder parts of the first, and 2 second (201) holding parts, but not. in the horizontal direction, respectively, as shown in FIGS.

Then, 4 through holes passing, through (90) from the lower surface of the first and 2 (201), 2. (202), second 4 holding (203), parts, (204), the 2 first (512) (11) and the second holding parts, the. first and the second holding parts (201), 2, respectively, are formed 2 in the (202), two 4 parts of (203), the (204), first (11) 2 and (512) second holding parts, (201) 2 respectively, and 2 the (512) (205) temperature detecting part for detecting the (205) temperature of the first and. the 1 second holder, parts of (S) the first and the second holding parts (301), respectively,are formed in the two parts of the first and the second parts of the first and the second holding parts, respectively, respectively.

In addition, (90) the, first (501) and, second joint (502) portions, 'and (503)', and 1 '(504) the, ' 2 and (505) the first. and second imaging units' b 'and' b 'are included in the first and second imaging units' b' and 'b', respectively; and the first and second imaging units' b 'and' b ', respectively, are included in the first and second imaging units' b' and 'b', and 'b' and 'b', respectively.

Chamber ## (501) STR16, ## An airtight processing container, is 1 a (511) cylindrical, container 2 having (512) a bottom. having 1 a (511) bottom, portion with a bottom portion opened, by, the first 1 (101), and second 1 chamber (102), units of 3 the (103), first (104), and the second (161), 2 chamber units (302), of the 1 first (401) and the second chamber units of the first and second chamber units of the first and second chamber units, respectively 2 (512) . (201), 2, 2 4 (203), (202), (402) 2 (204).

In addition 1, (511) the, pressure-up/lowering mechanism of the first and second chamber units. and the pressure-1 lowering (511) mechanism may be 2 brought (512) into contact, with (501) the first and/or. second, pressure 1-(511) generating chamber 2 units (512) of the, first (501) and second chamber units (the (513) first and. second chamber (513) units, respectively O, respectively . by the pressure-elevating mechanism of the first and second chamber units, for example, between the first and second chamber units of the first and second chamber units, respectively, respectively.

For example, (502) one, of 1 the (511) plurality of moving, mechanisms 1 may (511) be provided at 1 the (101) outer peripheral portion of. the first and (502) second, chamber 1 units (511) of the first and (second chamber, 5 units), 5 for example, (502) in 4 the horizontal 1 direction (101) of the first and second, chamber units, 1 and (101) one of the two moving. mechanisms may move in the horizontal direction, and the other moves in the horizontal direction of the first and second chamber units, for example, between the first and the second chamber units of the first and the second chamber units, respectively, respectively.

For example, (502) the, first 1 and (511) second rotation driving units 1 ((101) e.g. the (521) first, and (522) second rotation driving (521) units, respectively, (523) may be. disposed (521) eccentrically with (522) respect to a central axis of. the, first and (523)/or second (521) rotation- driving 1 units (101), respectively, (521) and may move the, first 1 and (101) second rotation driving units, respectively . by the first and second rotation driving units (the and second and third and third and fourth and third and third and fourth and third and third and fourth and third and third and fourth and third and third and fourth and third and fourth embodiments).

The pressure-(503) reducing, mechanism, for 2 example (512), is installed, at (501) the lower. portion of the (503) first, chamber (501) unit, for example, (531) at, the (531) lower portion of the first chamber unit, and decompresses. the atmosphere in the two-chamber unit, and the decompression mechanism (decompression/decompression mechanism) is provided with an intake device such as a vacuum pump (532) connected to the suction-and-discharge engine of the pressure-sensitive mechanism, for example.

The O 1-(504) O-O 1-(101), unit- imaging 1 unit (101), the imaging unit (W), and the. image, pickup 2 unit are disposed, below 2 the (201) first and second imaging units 2 ((201) the first and second (S) image capturing units. (505), and are arranged above the first and second holding units (the first, and second imaging units, respectively) and capture the surface of the glass substrate (the image pickup unit, i.e. the image pickup unit of the image pickup unit).

The 1 imaging (504) data of 2 the (505) first, imaging unit, the imaging unit, the first imaging unit, 1 the (511) second imaging unit, (501) the second, imaging unit (W), the first (S) imaging unit . the 1 (504) second imaging unit 2 (505), the second, imaging unit (5), and the. second imaging unit are each provided in a single unit of the image pickup unit (504), 1, CCD 2 (505).

Operation > of <4. two-part joint parts

Next, the, processing sequence (90) of the bonding processing performed by the bonding joint 11a unit which 11b is configured, 11b as. described 11a above is described with reference to FIGS.

In the (90) joint, portion, 1 the (101) substrate which is to (W) be processed, is 2 held (201) by the first holding (S) unit,and the glass 1 substrate (101) is held 2 by (201) the, 1 first (101) holding unit (the first (117) and second 1 holder (201) parts of 2 the first and 2 the second holder 1 parts of the (217) first. and 1 the second holder parts 200 °C of the. first and the second, holder parts of the pair of first and second holder parts of the first and the second holding parts (the first and the second holder parts), respectively.

Also in this, case 3, the (103) two heating 4 mechanisms, (203) the first 1 and second (117) heating mechanisms 2, and (217) the first and 1 the second heating. mechanisms, respectively 1, are (102) heated to 2 the same (202) temperature of the, same 1 temperature (101) as that 2 of (201) the first and. the second heating units, respectively, and thus the warpage of the first and second cooling mechanisms may be suppressed, and breakage of the first and the second cooling mechanisms may be prevented from being prevented.

Then, in (90) the alignment process performed. in the alignment process in 4 the alignment process 1, (504) the first 2 and (505), the O-stage (501) imaging units, of the (W) first and the (S) second imaging units, respectively, in the alignment process are moved in the horizontal direction, and the surfaces of the first and the second substrate-processed substrates are imaged in the alignment process in the alignment process, in the alignment process, as shown in FIGS.

Then, the, position 1 of (504) the reference point of the substrate P (W) to be processed, is 2 adjusted (505) so as to match the position of (S) the reference point of, the image (502) to be processed, (W) which is displayed on the. image captured by the (W) image capture imaging (S) unit, and the position of. the reference point of the glass substrate P displayed on the image taken by the imaging imaging unit (the first and second imaging units' and 'Moving Picture Experts Group', respectively.

Then, a 1 hermetically (504) sealed space 2 is (505) formed in (501) the chamber by, the movement mechanism, in which 1 the (511) first and. second, O 1-chamber units of 2 the (512) first and, the (501) first-stage imaging (unit 11a,) .and the first and the second imaging (511) units - and the first and the second-stage unit parts are brought into contact with the first and second chamber units, respectively, by the movement mechanism shown in FIGS.

Then, in the depressurization (90) step,the, pressure reduction step is (503) carried out in (501) the depressurization step, (501) and the. pressure reduction step, is 1 carried (101) out in 2 the 2 (201) depressurization, step 1 in, the (401) depressurization step . and (402) the pressure reduction step is carried out in the depressurization step in the pressure depressurization step described above.

Then, a, heating (90) process is carried out. at a, temperature 1 elevation (101) process at 1 a temperature (117) elevation process 2 at (201) a temperature elevation process at (217) a temperature elevation process (W) at a temperature elevation process at a temperature elevation process, and the substrate processed by the first and second 2 heating units of the first and second holding units (the first and second heating units of the (S) first and second holding units, respectively, and the glass substrate (A), respectively. In the heating step. of, the heating (W) temperature, the (S) temperature raising 1 step is 2 performed by. raising 2 the, temperature from 300 °C the first. temperature to the second temperature in the temperature raising process, and the temperature of the glass substrate from the temperature rising to the first temperature is, for example, at a temperature of, for example, at or higher.

At, this 3 time, (103) the temperature 4 of the (203) two heating 1 units of (117) the first 2 and the (217) second heating units of the 2 first and the second heating units, respectively, are. equal, to or different (102) 1 2 from each other (202), 1, respectively. (101) 2 (201).

Then, in (90) the primary joining process . a gas, is supplied (161) to a bonding, surface of (161) the processing target substrate . and, a 1 pressure (101) is applied to the (W) bonding surface of (S) the glass substrate to (a 11b bonding). surface of (W) the processing (Wj) target substrate to (G) the, bonding 2 surface of the glass substrate, and (W) the adhesive is (S) applied to the bonding, surface of (W) the glass substrate (S) by the. bonding operation of the bonding surface of the glass substrate by the first bonding process.

In addition, (501) it is possible to prevent the generation (W) of a void (S) between the two, processing-processed. substrates and the glass substrates by using a decompression atmosphere such that the vacuum atmosphere is formed in the vacuum atmosphere, such that the formation of voids can be prevented.

Then, (90) in the process of. performing the step,on (106) process, a step (W) of performing a (S) step-on process is, carried out in the step-of-(W) and-and (S)-1 on-one .(G) step-and-(W) as-(S) one.step-one-step-and-one-step-one-step-two-step operations.

As described above, the thus-(T) formed polymerization substrate P is carried out by a moving (511) mechanism, which, is (80) not, shown, by a, movement mechanism, which is 1. not shown, and is carried out by the two conveyor parts by the two transfer units, and transfers (90) the substrates from the bonding parts Ct to the cascaded units in the above-described order, respectively.

Method for two <5.gt; step bonding process

As described, above, in the bonding (1) system, according to the present (S) embodiment, the temperature raising (S) process of raising 2 the (201) temperature in the chamber two to the. temperature, of the first temperature from (1) the, first temperature to the (501) second temperature is 1 carried out 2 in the bonding system described. in the first embodiment of the present embodiment, as described above, and the temperature raising process is performed as described above.

On the 2 other (201) hand, if (S) the temperature at the temperature above. the, glass 2 transition, point, (S) which is the temperature above the. glass transition, point, which 2 is (201) the temperature above the (S) glass transition point with respect 2 to the temperature, of the (S) glass substrate, at the temperature equal to or higher than the glass transition. point of the first holding unit, the sodium ions in the first (201) 2 and second glass substrates may migrate to the contact surfaces of the first and second holding parts, respectively, respectively.

The release of, sodium 2 may (201) cause problems such as surface (S) deterioration of the primary-secondary-secondary-part.2 of (201)-part-of-part-of-part (S)-by,(S) part-of-part-of-part-of-process- and-edge degradation of the glass-glass-substrate-one sub.sub

, In, the bonding system according to (1) the, present embodiment (W), a temporary (S) bonding step is 1 carried (101) out at 2 a (201) temporary pressure and, a temperature at a lower pressure and temperature, respectively, after holding, the substrates and the glass substrates, respectively, at, the holding portions of the. first and the second holding portions, respectively, (201) 2 and then the electrostatic adsorption by the first and second holding parts is carried out at a temperature raising/lowering process of the second bonding system described above.

The temporary bonding step is a 12 timing chart showing the. processing 12 order, of the bonding processing according to the present embodiment . and is a timing chart showing the processing order of the bonding processing according to the present embodiment, as described in detail with reference to FIG.

Then, the pressure in the two,(90) 12, chamber pressure is reduced, to 1 a (511) desired pressure range from atmospheric. pressure to, a (501) desired pressure, (atm) for example, (Pc2) from atmospheric. pressure, to (501) a desired pressure (atm), and (Pc1) then, the, pressure in (532)(the 4 pressure)-reducing process is reduced to a desired pressure) range from atmospheric pressure (Pc2) to a (. desired pressure, and thereafter, the pressure in the two-stage two-stage two-stage two-stage two is reduced to a desired pressure value (FIGS.

Then, in, the temporary bonding. process, the, two bonding (106) processes are carried 1 out (101) in the, temporary bonding (W) process in the (S) temporary bonding process in Pb2 the temporary bonding Pb1 process in the. provisional joining process, and the two bonding processes are carried out by the pressure of the pressure of the pressure between the pressure of the first pressure and the pressure of the pressure of the pressure of the pressure in the temporary bonding process.

At, this 1 time (101), the 2 electrostatic (201) adsorption portion of (111, 211) the first (on) and, second (501) holding portions, of the (S) first and second holding portions and the first and the second holding portions, respectively, (T1) are 1, in. (S) the on-state, whereas the temperature in the two-stage

On the other hand, since Pb1 the, pressure in the two- (501) step bonding process, is a pressure that is equal to (S) or lower than the. atmospheric pressure, for example, the pressure at the pressure equal to or lower than the (W) atmospheric pressure, the processing-processed substrate and the glass substrate are pressed at atmospheric pressure, for example.

Then, after the temporary, bonding (90) step, is completed (111, 211), the electrostatic adsorption performed, by the (W) two electrostatic adsorption (S) unit is Pb1 released at a, bonding 1 point (T1) where the 2 substrate (T2) is to be. processed, 2 and (T2) a pressure of, the (90) glass, substrate from (106) the pressure of the (W) first to the second temperature is equal Pb2 to or greater than the pressure of the pressure of the glass substrate to the first and (S) the second bonding sections of the first and the second bonding portions (step S) and the second bonding step (step S). Bonder.

As described above, since the electrostatic adsorption (1) by, the electrostatic adsorption unit is (111, 211) released in the bonding system according to the, present embodiment, since, the electrostatic adsorption by the electrostatic adsorption (S) unit is released before starting the. temperature, raising process (111, 211), the processing of the, electrostatic adsorption (W) performed by the (S) electrostatic adsorption unit, is not performed (W), and thus (S), the position of the glass. substrate is not displaced from the glass substrate by the second electrostatic adsorption unit.

, According, to the bonding system described (1) in the present embodiment, (W) it is possible (S) to prevent the displacement of the, (S) two-processed substrates and to. prevent the separation of the sodium from, the glass-substrate-forming substrate by the bonding system according to the second embodiment of the present invention, respectively.

On the, other, hand, (W) the electrostatic adsorption (S) by the electrostatic, entrapment unit (111, 211) is released at the timing at which, the electrostatic adsorption is, released by the electrostatic. attraction, unit (90), for example, at the timing (W) at which the (S) glass substrate is brought into (111, 211) contact with the target substrate and. the glass, substrate, (W) respectively, and (S) the electrostatic adsorption by, the electrostatic adsorption unit is prevented from. occurring at the timing of the bonding operation, for example.

However, the, start timing (111, 211) of the rise of the temperature, at 2 the (T2) temperature of the temperature of, the 2 glass (T2) substrate at the temperature, equal to or higher than the glass transition point of. at, least the glass (S) substrate may be maintained at a temperature, greater than (111, 211) or equal to the glass transition. point of at least the glass substrate, for example, at a temperature equal to or higher than the glass transition point of the glass substrate at a temperature of greater than or equal to zero.

In addition, it is possible to perform, electrostatic adsorption (111, 211) on the substrates which (W) are to be (S) processed by the electrostatic attraction. of, the first (W) and the second (S) electrostatic suction units, respectively, in the atmospheric environment, and the substrate and the (glass substrate), respectively (W), may break (S) up to a desired. pressure by the electrostatic attraction of the substrates and the glass substrates, respectively, in the atmospheric environment, respectively; however, there is a possibility that discharge may be generated during the depressurization.

For this reason, (90) it, is also possible to prevent (112, 212) breakage of, the (W) substrate-processed (S) substrates and the, glass substrates, from the electrostatic attraction by the electrostatic, attraction of (111, 211) the first and second vacuum suction units, which are, performed by the first (W) and second vacuum (S) adsorption units, respectively, by the first and second vacuum adsorption units, respectively, in the first and second bonding processes, respectively.

In the primary, joining 2 process (T2), a pressure Pb2 in which the (W) substrate P to (S) be processed is maintained at a. predetermined, time of, at (501) the first and the Pc3 desired value. of the pressure is maintained at a predetermined time, and the pressure in the two-stage bonding process is changed to a value equal to or greater than zero in the primary Pc2 joining process, and the pressure in the two-chamber two is changed from zero to zero.

Then, the, temperature (90) in, the 1 chamber can (102) be lowered 2 from the (202) first temperature to (501) the second temperature 2 by (T2) the temperature 1 of (T1) the first. and, second cooling (W) mechanisms of the (S) first and the Pb2 second cooling mechanisms, respectively, to (T) the temperature of the first and / or, second substrates from, the (501) first and, Pc3 the second cooling mechanisms, respectively, to the (T) first and (90) second heating units of the first. and second heating units, respectively, from the first (atm) and second temperature ranges from the first temperature to the second temperature range, respectively, in the first and second bonding processes shown in FIGS.

Two <6. fail >safe processing

Next, the process 1 sequence of (301, 303) the fail 2- (302, 304) safe processing using the first and second temperature detecting 13 units and the. fail 13-safe processing using the first and second. temperature, detecting 13 units (the first and second temperature detecting units, for example, the temperature-raising process and the main- bonding step described above) is performed in. the above-described temperature-raising process and the main-bonding process.

On the, other, hand 1, the (303) processing sequence 2 for detecting (302) the warpage of the secondary cooling (102) mechanism 1 one by using the two- th 1 temperature detecting (301) unit and 2 the first (304) and second temperature 2 detecting units (202) (the temperature detecting, units of the 1 first and (102) second temperatures detecting units, for example,the first and second temperatures detecting units, but also between the first and the second temperatures detecting units, may be performed in the same processing order.

When 13 the temperature difference between, the outer (5) peripheral, portions 1 of the (303) two-stage, two (102) 1 (W) (S103). (S101), (302) 2, 1 (102) (, S102). (5) (W)

When, it is, determined in the process that (the S103, Yes), second temperature (5) difference, is (90) equal to or greater than (the S104), threshold value in the. process, the, (90) control apparatus, 1 is stopped (117), when the 2 temperature (217), difference between 3 the (103) two-4 stage (5) (203), 1. (102) (W) (S101 ∼ S103 S103, No).

By performing such a fail- safe treatment, even if (1) warpage, is caused 1 in the (102) bonding system 2 described in (202) the first embodiment, for, example, in the case of bending in, the first and second cooling mechanisms 2 described (201) above, the bonding system according to the present embodiment can prevent the occurrence of warpage of the first and second cooling mechanisms described above, and (101) 1 prevent breakage of the first and second holder parts from the. first and the second cooling units, respectively, by the fail-safe processing.

As described above, according to the embodiment of (45) the present embodiment 1, the bonding apparatus, 2 according (201) to the present embodiment, includes, the two-part, holding, parts, the two (202) (101)-part 3 holding parts, the two-parts holding part, the two- part cooling units, between the (106) two parts of the cooling mechanism 1, the parts of the cooling mechanism of (102) the two parts, and the parts for cooling of the 2 parts of the cooling mechanism (A) and, the (O) parts of the (A) and the (O) parts (A). The appliances (103) of, the 4 first and (203) the second. and the first and the second heating units of the first and the second and the first and the second heating mechanisms are included in the first and second heating mechanisms

Then, 1 the (101) first, and 1 second cooling (117) mechanisms are, provided 1 on the opposite (W) side from. the 2 side (201) opposite, to 1 the (101) holding surface of, the 2 first and (217) second cooling, mechanisms 2 (the first (S) and the. second cooling (106) mechanisms, described 1 in (101) the first 2 and (201) second cooling mechanisms, described in (W) the first and (S) second cooling mechanisms. described 1 in the (102) first, and 1 second (101) cooling mechanisms (113) described in the, first 1 and (101) second cooling mechanisms, described (W) in the. first 2 and second (202) cooling, mechanisms 2 described (201) in the (213) first and second, sub 2-(201) units of the first (S) and second. sub 3-units (103) of, the 1 first and (102) second sub-1 units (101) of the first and second, sub 1-units (102). 4 (203), 2 (202) 2 (201) 2 (202).

, According, to the bonding apparatus according to the present embodiment, 1 it is possible to prevent breakage of the first and second holder. (45) parts and the first and second, holder parts from the first and (101) the second holder parts of the first 2 and the second holding parts of the (201) first and the second holding parts, respectively, in the first embodiment and the second embodiment, respectively.

Further, according to the embodiment of (45) the, present 1 embodiment (101), the 2 bonding (201) apparatus, according (106) to, the 1 present embodiment (401), includes 2 the first (402) and second. holding 1 units, (401) the first 2 holding mechanism (402), the 1 first (101) holding mechanism 2, (201) the first holding mechanism . the second holding mechanism, the first holding mechanism, the second holding mechanism, and the first and the second holding mechanisms described above, respectively.

Thus, according to the bonding apparatus (45) according to, the 1 present (101) embodiment, 2 the (201) positional displacement of the two holding. portions of the first and second holding portions of the first and the second holding portions may be prevented from being separated from each other, and the bonding apparatus according to the present embodiment is not limited thereto.

The bonding, method according to the present, embodiment 1 includes the, steps 2 of maintaining, the substrate, to be, processed by the. electrostatic 1 attraction between the first (W) holding step . 2 the second, holding step (S), the first bonding step . the, second 1 bonding step, the 2 second bonding, step, (W) the second bonding (S) step, the second bonding step, and the step of. holding the, glass substrate to a temperature lower, than the (S) desired one, (W) (S).

Thus, according, to the bonding method according to the present (S) embodiment, the deposition of sodium from the, two glass substrates can be prevented by the bonding method according to the. present embodiment.

In the above- described (G1) embodiment, when (W) the processing to (G) be processed is performed, in the two-coating (G2) and heat-(W) treatment blocks (S), the processing in the two. coating and (G) heat-treatment blocks (W) may be omitted, but (G1) the processing in the. two,coating, and heat-(1), treatment blocks (G1) may be omitted, and in. this case, the processing in the two-coating and heat-treatment blocks may be omitted.

Further, in the above, (45) described embodiment, 1 the (101), control 2 device (201), has been (106) controlled by the (5) first holding unit, the 1 first (101), holding 2 unit (201), the (106) second holding unit, the pressurizing mechanism, and the like of the first and second holding units, the first and the second holding units, the first and the second holding units, and the like; however, the embodiment has been described in connection with the embodiment described above. The control unit which controls (45) the control unit may. be provided with a bonding device.

Furthermore, in the, embodiment described above, the example in which, a glass substrate, is used as a support substrate is described. however, it is also possible to use, for example, a silicon wafer as a support substrate for example instead of a glass substrate.

The broader aspects of the, present invention are not limited to. the specific, details and representative embodiments shown, and described above, and thus, various modifications may be made. without, departing from the spirit or scope of the general inventive concept as defined by the, appended claims and. their equivalents.