METHOD AND AN APPARATUS FOR MANUFACTURING POLYCRYSTAL ROD USING COMBINED CORE MEMBER INCLUDING SECOND CORE MEMBER PREHEATED BY FIRST CORE MEMBER ELECTRICALLY HEATED

For polycrystalline silicon manufacturing of rod-like the present invention according to Figure 1 shows a also denoted by precipitation, exemplified by coarse. configuration.

Also 2a-degree 2f for polycrystalline silicon manufacturing of rod-like the present invention according to the precipitation reactor in number 2 number 1 core means, exemplified by arrangement of means core is roughly state is a plane view.

Also according to the present invention also 3-Figure 7 shows a number 1 core element surface layer produced by layer number 1 core means additional precipitation silicon outwardly on the surface of a mask so as to form a cross-section of retaining steps (a) and (b) as also,

Figure 3 shows a rod-shaped in cross-section also won ([...]) having number 1 to the front surface core element separation layer of a formed outwardly on the surface of means core number 1 silicon precipitation parts of the process (a) and (b) cross-section of rod retaining steps and exemplary indicative of the outlines,

Figure 4 shows a cross-section also won ([...]) in rod-shaped number 1 having surface core element separation layer of a formed outwardly on the surface of means core number 1 silicon precipitation parts of the process (a) and (b) cross-section of rod retaining steps is indicative of the outlines exemplary,

Also Figure 5 shows a cross section is concentrically rectangular conduit (conduit) or tubular number 1 having surface core element separation layer of a formed outwardly on the surface of means core number 1 silicon precipitation parts of the process (a) and (b) cross-section of rod retaining steps and exemplary indicative of the outlines,

Figure 6 shows a cross-section also won ([...]) in rod-shaped number 1 core element separation layer of a three surface formed outwardly on the surface of means core number 1 silicon precipitation parts of the process (a) and (b) cross-section of rod retaining steps is indicative of the outlines exemplary,

Figure 7 shows a rectangular cross-section also mounted on an unload rail separation layer of a having surface core element number 1 and constituting a core means outwardly on the surface of silicon precipitation parts of the process for guiding a rod to a slitter cross retaining steps (a) and (b) indicative of the outlines is exemplary.

<Description of the sign for major part of the drawings >

C2 means core C1: number 1: number 2 core means

C1a: number 1 C1b core element, C1b ', C1b ": separation layer

Precipitation part D2 D1: number 1: number 2 precipitation part

E2 electrode portion E1: number 1: number 2 electrode portion

Gf:Go reaction gas: exhaust gas

Nf: gas supply unit No: one side

Rb: precipitation reactor base portion Ri: precipitation reactor inner space

Rs: precipitation reactor shell T1: number 1 power delivery means

V1 T2: number 2 power delivery means: power supply number 1

V2: number 2 power supply

Hereinafter, based on a text content of the drawing reference to detail the. off at the first and the second the present invention.

To achieve said purposes, the present invention refers to, internal draft beer precipitation a core means is preheated and electro heating the reactor and which is directed the surface plate while supplying the gas silicon precipitation in reaction polycrystalline rod-like by in method of manufacturing,

Draft beer precipitation said inner space, which is made of a material resistant to number 1 number 2, which is made of a material and silicon means core together and a core means; and electric heating means core said number 1, a electrically heatable by said number 1 core heated by means and core means for preheating said number 2 ; that has been preheated said number 2 core and electric heating means, said number 1 number 2 core core means and electric heating means in draft beer precipitation of refrigerant gas within an interior void step one deposited on the counter electrode silicon; to characterized by including a mixed core for guiding a rod to a slitter polycrystalline silicon using provides manufacturing method.

Selectively, that has been preheated said core number 2 installed at the upper part of the electric heating means, said number 2 entire means core starts or heating while simultaneously, a plurality of means core said number 2 or number 2 core group by dividing the core group on the LCD at a point behind said number 2 other may start electric heating.

As preferred embodiment, said number 1 core means to be contained within the temperature range 400-3,000 °C electric heating the number 2 core means to be contained within the temperature range 350-1,000 °C while preheating said number 1 number 2 core means core means temperature difference is 50-2, to be contained within the temperature range 650 °C is characterised in that it has a.

Selectively, said number 2 in step for preheating means core, said precipitation draft beer internal absolute pressure based on pressure that is to be included in the range of 1-20 bar by identifying the state of a hydrogen, nitrogen, argon and helium 2 1 the selected one or a pre-heated to a gas atmosphere at least one characterized in that.

As preferred embodiment, said number 1 core means and said core said number 2 while electric heating means in which a reaction gas of are supplied into the chamber and a precipitation reactor, said number 1 through core means and/or said number 2 core means outwardly of silicone nickels are precipitated number 1 number 2 precipitation precipitation and/or the portion characterized in that.

As preferred embodiment, said reactive gas having monosilane, this ammonium thread column , three ammonium threads column , 1 the selected silane tetrachloride at least one silicone-containing ingredients one or 2 characterized in that including.

Selectively, said reactive gas having hydrogen, nitrogen, argon, helium and hydrogen chloride the selected 1 2 one or at least one gas components may include further.

As preferred embodiment, said precipitation draft beer inner wall absolute pressure based on pressure and the reaction within the range 1-20 bar said number 1 number 2 precipitation precipitation and/or temperature in surface portion within range 650-1,300 °C based on said number 1 precipitation portion at reaction temperatures of precipitation said number 2 precipitate the silicon surfaces characterized in that.

Selectively, said number 2 precipitation precipitation portions of the number 1 class solar cell unit class semiconductor polycrystal silicon and the each polycrystalline silicon can be produced.

And, the present invention refers to, silicon precipitation reaction denoted by from a precipitation-occurs in device manufacturing for guiding a rod to a slitter polycrystalline silicon including, and heats said precipitation, by means of injection member is formed to the in shell department ; an interior void said a gas supply unit includes a plurality of refrigerant gas, a exhaust gas from the inner space said one side and, said silicon precipitation in reaction required electrical comprising a heating means; said electric heating means is composed of the electrode with core means; said core means, which is made of a material-resistance, such that number 1 number 2, which is made of a material and silicon means core means core is configured is divided into; which the switching element is arranged and said number 1 core means and said core means, each connected with the number 2 number 1 number 2 electrode portion and electrically independent from one another, and to minimize the size electrode is characterized by mixed core for guiding a rod to a slitter polycrystalline silicon using provides manufacturing device.

As preferred embodiment, electrode and/or said number 1 number 2 electrode portion is said to a base portion for installing the reaction apparatus characterized by precipitation can be constructed.

Selectively, the first electrode part, and said number 1 number 2 electrode unit is one or more number 1 number 2 group and electrode portion is divided into group electrode portion group part each electrode independently fed and is moveable between an may be constructed so as to allow.

As preferred embodiment, which the switching element is arranged and said number 1 number 1 number 1 power supply from power delivery of mobile terminals, using means for heating means core said number 1 independently fed and is required electrical and is constructed so as to allow, said number 2 number 2 power delivery of mobile terminals, using means for which the switching element is arranged and from power supply number 2 heating means core said number 2 is coupled with the transistor required electrical supplied to it can be constructed.

Selectively, said number 1 number 2 power supply power supply and a separate power converter system is overall one non-return valve is either configured separately a power conversion system can be constructed.

Selectively, one or more of non-magnetic material contained in the process, hardly generates wastewater, said number 1 to a power supply number 1 core means electrically interconnected by one or more of non-magnetic material and/or contained in the process, hardly generates wastewater, said number 2 core means, and electrically interconnected by to a power supply number 2 is characterized for guiding a rod to a slitter polycrystalline silicon can construct a device manufacturing.

As preferred embodiment, in the cross-section means core number 2 means or core said number 1 won, elliptic or polygonal (triangular, rectangular, hexagonal, such as octagon) in rod (rod), wire (wire), filament (filament), bar (bar), strip (strip) and ribbon (ribbon) and, concentric cross-section, concentric an ellipsoidal or concentric a polygonal conduit (conduit), tube (tube), cylinder (cylinder) and duct (duct) selected a Serial form for a long time characterized in that.

As preferred embodiment, said resistive materials tungsten (W), rhenium (Re), osmium (Os), tantalum (Ta), molybdenum (Mo), (Nb) [...] , iridium (Ir), ruthenium (Ru), technetium (Tc), hafnium (Hf), rhodium (Rh), vanadium (V), chromium (Cr), zirconium (Zr), platinum (Pt), thorium (Th), lanthanum (La), titanium (Ti), ruthenium (Lu), yttrium (Y), iron (Fe), nickel (Ni) and aluminum (Al) the selected 1 species or 2 including at least one metal element selected can be metal or alloy.

Or said resistive materials film made of a molybdenum silicon cargo (Mo-Si), lanthanum [...] (La-Cr-O) and zirconia and process the selected 1 2 one or at least one component material including ceramic-.

Or said resistive materials a amorphous carbon, graphite and silicon carbide (SiC) the selected 1 species or 2 including at least one component can be carbon-based material.

As preferred embodiment, said of pure polycrystalline or single crystal silicon materials silicone and/or doped avoids characterized in that,

Selectively, said number 1 core means made of resistive materials said number 1 a single or a plurality on a surface of core separation layer of a forming a in a predetermined portion of the.

The, said an isolation layer is 1 or more types of layers 5 and hereinafter, said each layered separation functional ingredient the silicon (Si) nitride, oxide, carbide or oxynitride may include a.

Or said each layered separation functional min tungsten (W), rhenium (Re), osmium (Os), tantalum (Ta), molybdenum (Mo), (Nb) [...] , iridium (Ir), ruthenium (Ru), technetium (Tc), hafnium (Hf), rhodium (Rh), vanadium (V), chromium (Cr), zirconium (Zr), platinum (Pt), thorium (Th), lanthanum (La), titanium (Ti), ruthenium (Lu) and yttrium (Y) the selected 1 2 one or at least one metal element in an amount of nitride, oxide, silicon cargo, carbide, oxynitride or silicon oxide may include a cargo.

Selectively, said number 1 means core said number 1 discrete keys formed on a surface of core thickness of the sum of (C1b) layer characterized in that the 10 nanometer -20 millimeter.

Selectively, said number 1 number 1 contained in the core means forming separation layer unit core 400-3,000 °C detection in a temperature range is heat treatment at a temperature contained in the, said precipitation reactor or hot such heat treatment can be embodiment in precipitation reactor.

On the other hand, said isolating layer on which a silicon separating functional composition comprising the same as an silicon layer included within the scope of m -10 millimeter micro 1 addition to a thickness that the number 1 core means can construct.

The, said-functional separation of layer configurations a plurality of discrete said number 1 to surround the light source unit the surface of core element of the plural shapes are formed in said separation layer can construct means core said number 1.

While, said said number 1 a functional separation films on the surfaces of core element can be said separation layer.

Selectively, an abstraction layer said for some or all said precipitation reactor or hot formed in the solder ball in precipitation reactor.

Hereinafter, based on a text content of the drawing and further reference to the present invention were as follows. blows the.

The present invention refers to vertical or etching gas different from the type (bell-jar type) and tubular or-chamber type form of polycrystalline silicon manufacturing of rod-like regardless and structure the purpose is to, which can be applied to the deposit process, hardly generates wastewater, , at commercial etching gas different from the Siemens or reactor precipitation type (Bell-jar) referred to reactor (Siemens) a vertical precipitation reactor (hereinafter, 'vertical reactor' assembling and welding steps) since in similar to an in and used in can not be discharged to the, the present specification based on the vertical reactor to explain the time as large as that of the present invention.

As illustrated also 1, precipitation (Rb) base portion and (Rs) shell heats the form of a closed formed by the inner space has (Ri), a single or a plurality the core of said inner space (Ri) is composed are provided on a core means (C1, C2).

Said core unit shell (Rs) and the base portion to allow the power to be disposed on the outside of (Rb) from power delivery means (V1, V2) (T1, T2) the electrode portion is supplied from the control unit via the (E1, E2) and mechanically secured by and is electrically interconnected.

Uses one or a small number of core unit only core means included in the core the caption data to the caption connected to a pair of electrodes is carried out to thereby produce small laboratory scale alternatively reactor and of non-magnetic material, polycrystalline silicon for guiding a rod to a slitter commercial of manufacture with regard to means core in a reactor precipitation hot, which are used on the order of several tens of-hundreds of core units (C1, C2) the structure is included in the board, the core element of these core units is material component, equal to face or shape.

Precipitation photolithography (core means) in the present invention core means forming precipitation with epoxy resin and silicon in reaction is of the origin of that is connected to a surface ([...] ; substrate) unit core of a single or a plurality a exhibits set of (core units), each of the core unit core element (core element) is made to be greater than about or processing as a material.

And, the units a plurality of cores series and/or parallel format can be electrically interconnected, each of the core unit almost identical to the silicon and precipitation is checked, in the present invention an individual core-wise operation method or development simulation faecal aggregate that means core and properties to the invention relates to.

Said core means (C1, C2) a silicon deposition on the fiber surface temperature higher than the temperature necessary to precipitation reactor while heating the reaction gas into the inner space (Ri) the source (Gf), core means (C1, C2) are compositions thereof silicon to begin to the core means (C1, C2) (D1, D2) it projects out of the silicon precipitation part of rod-like is formed whereby polycrystalline silicon is, each of the core unit a reactor operation be obtained in individual unit polycrystalline silicon is the basic framework of rod.

Features of the present invention, precipitation draft beer inner space formed with a plurality (C1, C2) means core of the silicon material or non-silicon-based material among others a selected types composed only of a of the existing method, and an input, precipitation draft beer inner space (Ri) a core means (C1, C2) is non-silicon-based resistive materials core of a elements are distributed a number 1 number 1 core unit composed of an aggregate of core means (C1) and, a core elements are distributed a number 2 core unit composed of an aggregate of a number 2 core means (C2) such as two or more subscriber selects a is removed so that the electrode with the precipitation reactor within the configured heating means consists of a core means the copyright 2000.

In particular, in the present invention, a unit core difference core element under a standard of core means (C1, C2) for two subscriber selects a classification the reason for this is that the, first resistive materials a unit core number 1 electric heating hot individual a plurality of between the bearing and the shaft unit core number 1 number 2 a unit core heat transfer-centered copied silicon material is preheated a crown portion consisting is that the, resistivity of silicon self-through the reduced sufficiently values are also electrical heating of unit core number 2 quickly the pottery contains fired. so that it allows the mold block.

Wherein, of the present invention is to extend the, particular emphasis is than, plurality of number 1 core electrically resistive materials when the two having a different property number 1a with the aid of side materials number 1b core means core means can construct manufactured easily.

In this case, number 1b said number 1a core means core means simultaneously or sequentially by supplying electricity by heating the, heated number 1a core means between the bearing and the shaft means core number 1b a plurality of number 2 core of silicon material preheats natural thermal communication-centered copied to be, should of silicon self-through the reduced sufficiently electrical heating of the pottery contains fired number 2 core means to quickly may be loaded with.

Hereinafter, resistive materials core of a elements are distributed a assembly unit core number 1 number 1 core means for high purity silicon and (C1) a elements are distributed a assembly unit core number 2 number 2 core means (C2) a silicon precipitation reactor inner space tower-mounted together (Ri) based on the time as large as that of to illustrate the pulsating current is.

Wherein, (intrinsic silicon) silicon pure addition, the height of material purity silicon doping or necessary number (dopant) containing doped silicon (doped silicon) and a surface of the, concentration of the agent in the unwanted impurities to the degree included within a permitted range includes low material.

Said number 1 core means (C1) and (C2) means core number 2 the units core contained in the number 1 electrode portion (E1) and a number 2 electrode portion (E2) to respectively electrically connected which mechanically fixed, and simultaneously, each core means a core unit individually a pair of electrodes is electrically connected to.

(C1) means core number 1 of resistive materials in the present invention the number 1 electrode portion (E1) within reactor precipitation together with electric heating means respectively number 1, precipitation reactor external power supply (V1) (T1) power delivery means from number 1 through number 1 number 1 electrode portion (E1) supplied to a relatively low potential differences required from room temperature by the current in the warm-up temperature can be electric heating quickly easily.

While, the number 2 number 2 core means (C2) (E2) electrode portion number 2 within reactor precipitation together with electric heating means respectively, precipitation reactor external power delivery means (V2) (T2) from power supply number 2 through number 2 number 2 electrode portion (E2) supplied to an and can be supplied with a. is configured.

However, purity silicon materials is very high potential difference a is too high resistivity if/O controller electrically heatable at room temperature, a large number of number 2 core is composed a number 2 core means (C2) is warm temperature higher than the temperature necessary to the deselected a power supply source ordinary the method uses a heating electricity by using it is difficult.

Therefore, precipitation at room temperature according to the present invention to start a heating draft beer, number 2 core means (C2) without also the supply of the number 1 core means (C1) first electric heating ., it is necessary.

Number 1 core means (C1) and first electric heating when undesirable electrically heatable the number 1 number 2 core means (C2) (C1) means core first condition when it is mounted the neighborhood of a electrically heatable number 1 core means (C1) by the upper walls temperature preheated. up.

On the other hand, reaction gas or a silicon containing the length an inert gas high gas supply unit then preheated to a temperature (Nf) or a separate gas supply unit of the deposition reactor through washing liquid is supplied to the inner space (Ri) core means (C1) or (C2) number 1 number 2 core means sufficient for heating a.

However, an oversized are bulky making the further the high temperature gas reactor for producing commercial disposed within core means (C1, C2), in particular number 2 core means (C2) for, silicon resistivity value of about 2-5 ohm-cm hereinafter in the right of an low as about 350-400 °C or more of silicon at the direction of the length of the line properties of the conductor in a range of from 1,000 °C hereinafter acceptable heating at an elevated temperature to preferably within the time a physical power heating a. disables.

Therefore, as in the present invention which allows the presentation to the, electrically heatable core means (C1) by a number 1 number 2 core means (C2) in a temperature range of 350-1,000 °C included in the preheated to a temperature, and the difficulty large number 2 core means (C2) is current flows without number 2 core means is connected to the electrical heating of (C2), lower than high temperature the electric furnace dust of potential differences is electric heating the presence of the rotation is carried out, the amount.

Said heated first electrically such as number 1 core means (C1) (C2) means core number 2 in time, and during the is preheated, a special pressure (Ri) inner space without constraint on behalf cryo pump followed by a the burden on the equipment remarkably reduce, and maintained at, silicon precipitation operation contrast absolute pressure based on pressure that is to be included in the range of 1-20 bar is maintained pre-. may be.

And, in the process of stage the cause of a low preheating said, inner space (Ri) hydrogen, nitrogen, argon, helium the selected 1 2 one or at least one gas atmosphere preferably is formed on.

Gas supply through gas supply unit or a separate (Nf) said selected gas that allow also nice, in this case gas supply the flow rate core means (C1, C2) is is not cooled set in a range in which the. to change the way.

An object by using a histogram critical heat transfer causes a rise in the temperature is between different solid surface interconnects the transfer of heat heating with radiation further heating solid surface so that a store instrument preserves the outputs governs if, number 2 core means (C2) electrically stage the cause of a low preheating heated pre radiation from number 1 core means (C1) is initiated to heating, preheating process other neighborhood signal according to progress of the number 2 core means (C2) with affected by heat transfer from the arc gas to copy.

Temperature of that has been preheated number 2 core means (C2), i.e. T (C2) is 350-1,000 °C page initial temperature of number 1 core means (C1) is supplied to a high-temperature, i.e. T (C1) that should be performed in real time, temperature T (C2) is enhanced increases electrical heating of easy number 2 core means (C2) can begin with negative by considering, regulating electrical heating of (C1) means core number 1 two core means temperature difference, i.e. ΔT [=T (C1)-T (C2)] and a T (C1) value preferably can be appropriately selected.

In the present invention, said number 2 core means core means (C1) (C2) during stage the cause of a low preheating said number 1 to be contained within the temperature range of 400-3,000 °C electric pre are pleasant heating a, core means (C1) and (C2) means core number 2 number 1 the temperature difference, i.e. Δ T value is 50-2, to be contained within the range of 650 °C it is preferable that the.

If, back < 400 °C ΔT < 50 °C and T (C1), (C2) can be brought T (C2) = 350 °C number 2 core means actually be the is preheated very it is difficult.

Δ T while initial copied to > 2,700 °C degree of preheating process to increase the heating surface to maintain the > 3,000 °C T (C1), (C1) of number 1 core means as well as and the meltable, number 2 of silicon material in the peripheral area thereof adjacent core means. become too risk of (C2) is melted.

More preferably 400-900 °C temperature stage the cause of a low preheating number 2 core means (C2) to be contained within the temperature range the silicon resistance according to a temperature about 0.03-2 ohm-cm within such a range of the preferably predetermined.

Than more preferably silicon is less than the 0.1 ohm-cm value of about resistivity indicative of characteristics of the conductor to be contained within the temperature range 750-850 °C is preheated also nice, according to is at a reduced risk of molten core element silicon reactor which can increase removal efficiency of preheating while and, electrical heating of (C2) means core number 2 is at the lower voltage is enabled can begin with straightforward.

This limited temperature range for meanihgfui stage the cause of a low preheating preferably number 1 core means (C1) 500-2,500 °C temperature range, more preferably 800-2,000 °C temperature range to be contained within the. lower electrically heatable.

In the process of preheating the present invention according to, said number 1 number 2 core means core means (C1) and/or (C2) a silicon deposition on the fiber surface the required reaction temperature higher than each electric heating or preheating. there is no problem in even.

For example, monosilane, an containing elemental silicon (SiH₄) of reacting (Gf) reaction gas including the used as a raw material, reaction temperature when temperature of about 650-800 °C, number 2 core means (C2) is finer than the then is preheated to a temperature high electric heating begins process upon two core means along with a power supply (C1, C2) maintaining reaction temperature is emitted to the control it is difficult to obtain a do not go.

According to the present invention in a temperature range T (C2) is 350-1,000 °C number 2 core means are included in (C2) by heating the silicon material then reduce a sufficiently AlCu is deposited on the barrier metal of, (V2) from power supply number 2 through number 2 electrode portion (E2) of potential differences relatively low started also the supply of, silicon precipitation in reaction the required reaction temperature (Tr) group is a predetermined acceptable number 2 in a temperature range from (C2) means core can maintain close temperature of electric heating can be.

The, number 2 core units are connected to one another in series and/or parallel format number 2 core means (C2) are formed of liquid temperature of reaction temperature (Tr) said support removably electrically or controlled to the heat transfer sector increases facilitate a pivots on whether, -layered of silicon material addition to properties such as number 2 core means (C2) included in number of unit core number 2, number 2 electrode portion (E2) bonding with draft beer precipitation such as characteristics electric circuit in configuring method, subjected to in turn directly influences are deselected assembled state.

To this end, in current range and acceptable potential difference from the bottom of (C2) means core number 2 electrical temperature, to allow the preheating in a temperature range from 350-1,000 °C temperature on LCD production yields, optimizing the intensity distribution of, a electrically heatable prior temperature of number 1 core means (C1) 400-3,000 °C behind, selected on the in a temperature range at least about value Δ T excess of 50 °C varied according or time, and, where in a substantially constant it is preferable that the.

Said preheating such as number 2 core means (C2) and the contents stored in the database then starting supplying electricity to T (C2) started ascending agencies, reaction gas composition and predetermined low speed in 650-1,300 °C contained in the reaction temperature in a temperature range a second (Tr), or in time enables change on power supply number 1 number 2 power supply formed by controlling an (V1) and (V2) (C1, C2) for supplying electricity to corresponding core means..

In the present invention, core means (C1) and (C2) said number 1 number 2 core means core units and number 2 number 1 or a plurality of short-lived unit core and are each made up of, an individual core unit the a pair of electrodes, each core means included in the core units independently or are connected to one another in series and/or parallel format power system. can be constructed.

For example, the number 1 core means (C1) is also 1 number 1 core unit consisting of two 1 the same time, generates a pair of number 1 electrode portion (E1) through the power supply number 1 and is electrically connected (V1), of 2 is number 2 number 2 core means (C2) are connected to one another in format series unit core is carried out to thereby produce simultaneously two pairs of number 2 electrode portion (E2) through (V2) power supply number 2 power supply electrically connected with is the exemplary system.

Also 1 is illustrated for a precipitation filtering process, hardly generates wastewater, if embodiment of the present invention, precipitation draft beer, which is made of a material resistant to inner space (Ri) number 1 number 2, which is made of a material and silicon core means (C1) (C2) means core behind a together, said number 1 core means (C1) for electric heating and, and a electrically heatable by number 1 number 2 core means core means (C1) (C2) which is preheated, that has been preheated after an electrical by heating the number 2 core means (C2), polycrystalline silicon by supplying reaction gas (Gf) for guiding a rod to a slitter manufacturing. may be initiated.

Small number of core unit of Figure 1 made of alternatively e.g., actual rod-like polycrystalline silicon on a commercial for mass-producing to dimensional measuring device does not use applying the present invention, core when the core unit number of linking the plurality-on the order of several tens of usually extends to need to consider partition wall negative..

As taught front precipitation reactor shell (Rs) a precipitation filtering process, hardly generates wastewater, an the diameter of the great number of unit core or electrical position the electrode lot operation circuit configuration and method according to the caption data to the caption the core are found to exhibit significantly temperature difference. is likely to occur.

The core unit a temperature difference between a problem, as well as silicon precipitation in, number 1 number 2 core means (C2) for stage the cause of a low preheating core means (C1) for electrically heatable that has been preheated from point when the tension signal begins to number 2 core means (C2) for electric heating point when the tension signal begins to up to bar which may occur, draft beer precipitation same taken into account in design and operation, it is necessary that.

Small number of number 1 core is composed a number 1 core means (C1) for electric heating dimensional measuring device does not use number 1 core means (C1) start electric heating simultaneously entire may, core unit is used a large number of number 1 number 1 core means (C1) is shifted from a predetermined mode to a plurality of core group by dividing the core behind the second register loads a other group on the LCD by starting the electric heating a core of low efficiency in the course preheating mitigate the problem pressure units equal to the number of.

On the other hand, that has been preheated number 2 core means (C2) for electric heating tube structure instead, lot number 2 number of unit core the temperature fluctuations-wise the core when height, preheating is very insufficient number 2 core unit in a rotating unit there is provided an electrode, current is potential difference thus formed, which makes it difficult to electric heating begins, preheating process is the need should extend.

In addition small number of number 2 core is composed a number 2 core means (C2) for electric heating dimensional measuring device does not use number 2 core means is arranged to start electric heating simultaneously entire (C2), and, a large number of number 2 core unit is used in the case where a program a plurality of core group number 2 core means (C2) by dividing the different group on the LCD core behind the second register loads a preferably also from which to start electric heating.

A large number of number 2 core unit is divided into group core electric supply begins the, number 1 core unit only difficult to preheating opposite direction of the spring force direction on the position where the first electrically group of unit core number 2 heating and begins to be neighborhood number 2 more quickly than the executable code by a group core of unit core, effect warm because the metallation can be electric heating discovered more quickly start is enabled.

Silicon core units of the sintered compact has a height, preheating selected from the stored effective data is exposed is formed in electrical reduced sufficiently started heated, relatively in order to place temperature range precipitation reaction is after receiving the data, eventually core of means core in the present invention number 2 from which to start electric heating group on the LCD no greater the difference in point.

While, number 1 number 2 core means core means (C2) (C1) and/or electrical heating of of core of means each core takes be well--divided into group, core quantity per a electricity supply system for the treatment of the solid type and refining the core group on the LCD allows switching or powering of terminations while controlling makes it possible, as the load since is followed by a, number of group core discriminate a video mode for setting a copied to a free space from an it is preferable that the.

While, also 2a-degree 2f as illustrated, of the present invention according to core units and there is provided an electrode packaged and/or is vertically installation position is which may be set rules, the number 2 (C2) means core row stage the cause of a low preheating can be influenced and the placement number of group core since method to the decision of. it is desired that the patterns.

If, beamlike silicon core means enables warm up the separate pre-heating part applying a precipitation process, hardly generates wastewater, including existing the present invention the separate process stage the cause of a low preheating number 2 core means (C2) together pre-heating part number 1 by considering utilizing a core means a structural unit of (C1) determining method and the placement number of. may be.

Number 1 number 2 core as said core means (C1) and (C2) means for depositing (Ri) inner space draft beer then core means with reference number 1 number 2 core means through electrical heating of (C1) (C2) a process for the is preheated, hydrogen, nitrogen, argon and helium one or 1 the selected at least one 2 in an atmosphere in gas components but is preferably embodiment, preheating process (Gf) (Ri) during the reaction gas into the internal space by supplying a number 2 number 1 core means (C1) and/or (C2) means core may embodiment precipitation of silicon on the surface of. a non-intrusive.

For example, T (C2) (C2) means core number 2 degree of > 500-600 °C of preheating is significantly obtained when electrical heating of (C2) means core number 2 before the start of precipitation reactor for supplying the reaction gas into the inner space (Ri) (Gf) high to the number 1 (C1) means core-back step of at agencies about surface of can be embodiment-electrodeposition.

Just, T (C2) is still low or reaction gas is preheated if supply, number 2 core means (C2) reaction gas to the provision of (Gf) and may be cooled by, , number 2 core means the main component which has an of starting time electrical heating of (C2) be delayed as likely the second scattered reflection, . do be careful.

If wanting depositing silicon more safely, temperature is lower than the reference number 2 core means (C2) and electrically complete stage the cause of a low preheating and then heating begins, power supply number 1 number 2 and a power supply (V1) (V2) by adjusting number 1 core means (C1) and (C2) means core number 2 both finishes a burr by forcibly pressing a reaction temperature and electrically connected as soon as, the reaction gas into the inner space draft beer precipitation (Gf) supplying (Ri) it is preferably.

The present invention according to precipitation heats silicon precipitation in reaction required electrical includes heating means, the electrical heating means (C1, C2) to the electrode (E1, E2) and a core means consists of.

Wherein, core means (C1, C2) (C1), which is made of a material-resistance, such that core means and number 1, number 2, which is made of a material silicon is configured divided into core means (C2), the number 1 core means (E1, E2) electrode portion (C1) and (C2) means core number 2 number 1 electrode portion with a respective switch connected in series is divided into (E1) and a number 2 electrode portion (E2) consists of electrically independent.

A precipitation filtering crome and the, number 2 number 1 electrode portion (E1) and (E2) electrode portion is divided into electrically independent from one another, and connected to the number 1 number 2 core means core means (C2) (C1) and/or an electrical treatment while heating, thereby, precipitation reactor inside a single or a plurality of gas supplies (Nf) (Gf) by supplying a reaction gas through the, silicon-electrodeposition the polycrystalline silicon rod can be produced.

By the present invention a core means core unit (C1, C2) by electrical properties and physical specifications according to installation position and heat transfer and a heat loss characteristic can be different, number 2 number 1 core means (C1) and (C2) between core means can be a temperature difference is generated.

Silicon precipitation reaction temperature in reactor vertical for limitation of the particular value for (Tr) than represented by allowable range and it is more valid to the driving direction and speed of, in the present invention (C1) and (C2) means core number 2 number 1 core means while electric heating for mutual certain temperature difference between value 0-200 °C within such that the pawl is maintained in, number 2 number 1 core means (C1) and (C2) means core a predetermined the power supplied to the supply of gas organic solvents preferably (Gf).

Silicon precipitation speed and response characteristics each of the core and precipitation silicon formed in a direction outside the size of end sections, i.e. maximum diameter (d1 (t), d2 (t); wherein, d1 (t) has door 3 to also 7 reference, d2 (t) the number 2 core means of silicon at the precipitation by the diameter of the end sections) or to the receiver temperature speed increase of the thickness of the impurity diffusion region is formed under, an individual core means core as well as a core unit is minimized certain temperature difference between units it is preferable that the.

If, during precipitation silicon (C1) and (C2) means core means core number 1 number 2 range of distribution temperature difference and between 200 °C greater than, by face d2 (t) and d1 (t), d1 (t) in units of one of the cores which d2 (t) or when stored in a amount of the maximum tolerance value, remaining core formed between silicon precipitation additional satisfactory formation of a control unit adds a corresponding increase constitution: even fixed temporarily halted by precipitation reaction causes the, eventually. deteriorate productivity of the reactor.

Therefore, effectively the present invention can be embodiment the exponential control current in response newly denoted by precipitation, electrically heatable using a number 1 number 2 core means core means (C1) (C2) effectively warm up the through the loop and allows the, herewith silicon precipitation each other unit and core means core in a process that may occur in the temperature difference and temperature distribution to reduce the basic connected to a drain is required.

To this end, precipitation reactor shell (Rs) and the base portion (Rb) and a game machine included in same, a gas supply unit includes a plurality (Gf), one side (No), sidewalls of the storage space temperature measuring means and temperature control system or the like taking into account and characterization, precipitation reactor shell (Rs) precipitation a silicon features without completely reconstructing any precipitation at inner space change in space portion, gas flow and shell (Rs) such as cooling of means each core of the analysis of biological samples contained in the core units preferably is placed.

And, core means, the caption data to the caption or core group core the required power opposite direction of the spring force direction in order supply while controlling control object at least one change in a property-current potential difference of electric circuit utilizes a user but, power supply system in which temperature controlling measured since the user utilizes a, profilometers fine (pyrometer), temperature distribution meter commercial such as may be utilized as a non-contact temperature measurement means the shell (Rb) (Rs) and/or base portion is provided and the utilization of an appropriate position of the can be. required is to design a denoted by precipitation.

And, precipitation (C1, C2) means core represents operation draft beer mutual certain temperature difference between is reaction in a temperature range from minimum power supply part is formed (V1, V2) for power supply control according method control variable and by setting respectively, said power controlled is emitted to the is two core means (C1, C2) to independently fed and it is preferable that the.

Power delivery means in the present invention number 1 number 2 power delivery means (T1) and (T2) through core means (C1) and (C2) number 1 number 2 core means are fed by the rotation of the air is automatically changed with the power supply (V1, V2) as illustrated 1 also a separate system but may constitute, two power supply (V1, V2) both function of including single power supply by constituting a system in order, said two core means (C1, C2) to a required electrical power delivery means (T1) and number 1 number 2 power delivery means each supplied the dispenses an independent (T2) may be loaded with.

In the present invention, an electrical supply independent constitution: the two power supply (V1, V2) from distinct facility or the combined single equipment consisting boyfriends detection core means, the caption data to the caption or core group core is varied, the potential difference or current while controlling the first valve..

And, each core means number of unit core of corresponding parameters, standard, electric formed by fastening there is provided an electrode on an electric circuit in series or parallel with provide a way to make the connected which may interconnect the, core means which can be designed separately by this unit an individual core is emitted to the circuit potential difference corresponding to electric heating unit according to and and current values is determined amount.

A precipitation filtering present draft beer precipitation oxygen in the silicon-operation-time on basic attributes size of end sections, i.e. d1 (t) and is increased in value d2 (t), precipitation oxygen in the silicon of the set position of a unit core negative temperature and physical shape can be differ by each of the nozzles, core-wise, by means or core group core electrical properties because of the difference among which, according to time and these properties may be determines a type of power supply system in operation is built and it is considering ., it is necessary.

While, the present invention according to core means (C1, C2) direct current or alternating current electricity supplied to selecting the type any among. a non-intrusive even.

As taught or more, polycrystalline silicon rod-like for silicon precipitation reaction denoted by from a precipitation-occurs if is configured according to a the present invention, precipitation heats, base portion (Rb) and a shell (Rb) (Ri) is formed by the internal space; said (Ri) for supplying the reaction gas into the inner space a gas supply unit includes a plurality (Gf) (Nf) and a, said inner space (Ri) (Go) exhaust gas from a one side (No) and a, silicon precipitation in reaction includes required electrical consists of the.

Wherein, said electric heating means (C1, C2) the electrode (E1, E2) and a core means at least, number 1, which is made of a material-resistance, such that said core means and core means (C1), (C2), which is made of a material silicon is divided into core means consists of number 2.

And, number 1 which the switching element is arranged and said core means (C1) and (C2) means core number 2 the number 1 electrode portion (E1) and a balanced nutrient components is divided into number 2 electrode portion (E2), (E1) and said number 1 electrode portion (E2) number 2 electrode portion consists of electrical independent from each other.

Said number 1 electrode portion (E1) and/or said number 2 electrode portion (E2) has a precipitation filtering reactor shell (Rs) or base portion (Rb) installed in lower to the driving direction and speed of somewhere, precipitation reaction (C1, C2) means the core over time (E1, E2) electrode portion and silicon applied to so that been increasing load is rod, also 1 as illustrated a simple core in the form of (Rb) base portion for to the grafting unit is placed at a level with a. glass structural aspect.

If, silicon rod load shape of a unit core if if is designed structure (E1, E2) electrode portion (Rs) shell between the discharge stage water and/or base portion divided or together (Rb) preferably even when it is disposed.

In the present invention, electrode portion (E1, E2) has a precipitation filtering reactor which is located outside power supply from the power supply (V1, V2) (T1, T2) is transmitted after more allocating to the predetermined after electrical connection in series or parallel for storing the electric core means constituting a core units (C1, C2) may be flowed through the is a electrical connection part.

Core-wise a pair of electrodes input terminal and an output terminal of unit the core to assume the functionality of which, electric circuit or interconnected body member (C1, C2) means core organization includes predetermined placement and spatially setting family of power supply is determined by the criteria.

Of the existing method vertical reactor and used in a variety of types of electrodes is the present invention may be denatured starch is octenyl succinate anhydride ester even, the electrode the next selects all or part in among the four factors can construct the: heat, the rate electric resistance (i) low metal conductor on an electrode ; (ii) for power supply cable (cable), bar (bar), tube (tube), shaft (shaft), conduit (conduit), shape (shapes) such as inter associate with power delivery means (T1, T2) and an electrode of, e. g. a connecting or joint; physically units an individual core (iii) while supporting the electrode or power transfer means (T1, T2) or electrically coupling to the electrode not to be opened to the support a carbon based made in the support or the chuck (chuck); said connected support (iv) said electrode or a gas, water or oil for aligning cooling apparatus flows coolant through a tube ; (v) precipitation reactor shell (Rs) (Rb) a base portion or the metal oxide dielectric between the negative electrode and/or cut-off on means; connection of an elongated component and the elongated component (vi) said, sealing, insulating and for identifying the location such as and fitting.

Part of these electrodes (E1, E2) the type and volume of the standard for setting an silicon that does not for guiding a rod to a slitter diameter, number of units disposed spatially corresponding core, electrode portion (E1, E2) or power delivery means (T1, T2) space that may be permitted to, its own resistance heating a contact area between the reduce of a it is required that a..

Electrode portion (E1, E2) which are set apart at each other and separate power delivery means (T1, T2) but can be connected on a device breakdown due to in, to be electrically connected and a plurality of electrodes (E1, E2) a connection between the electrode (E1, E2) a power delivery means (T1, T2) or electrical connection includes a singular body may be coupled through a welding preferably even when it is disposed.

Electrode portion (E1, E2) and support connection or electrical connections generally easily worked which is built it high purity graphite, silicon precipitation portion for preventing impurity pollution carbon (SiC) silicon carbide to the surface the like the uniform sintered body target has forming ceramic layer, reaction equipped when the shell (Rs) and/or base portion (Rb) metal material and. care should be taken to ensure that insulated.

Reaction temperature is a portion body member is exposed to high internal space (Ri) electrically insulating or sealing material protection is required, base portion (Rb), the mixture of metal, insulating components or the like, solution which is recycled all or some of. to change the way cooled to cooling fluid.

In the present invention number 1 core means (C1) and (C2) means core number 2 number 1 electrode portion corresponding according number 2 electrode portion (E1) and (E2) one or several each number 1 number 2 group and electrode portion is divided into group electrode portion, group electrode portion is independently fed and is moveable between an configuration and capable, as a result an individual core means constituting, a plurality of core unit is emitted to the classification group of electrode portion are also of the multiple core group may be divided into.,

In the present invention, an individual core means constituting, a plurality of core group, an individual core unit application is required when the application, on an electric circuit in series or parallel can be joined to one another in a format, such provate exchange system having funcation of internal power supply and the electrode is between or electrode portion and electrode portion electrically connected to resetting, powering on or powering communication means in the precipitation reactor according to the automotives and power supply device is assembly.

Wherein, power supply circle and electrode portion electrically connecting the precipitation reactor shell a power delivery means (Rs) and base portion (Rb) size, (E1, E2) electrode portion connecting the each other a power delivery means or electrical connections in the reactor can be only insulating material and metal precipitation reactor inside or outside where if a non-intrusive 21..

Said power delivery means precipitation reactor external and to install in a cable, bar or molded article and a of the tread is such as commercially available low metal conductor and includes means for its connection.

And, said power communication means in the plurality of electrodes (E1, E2) the aim electrical connection between one deposited on the counter electrode internal reactor, in particular base (Rb) of the dielectric is provided in the case where a program instead metal material includes a graphite material is provided to form the a molded article may be used, this graphite molding physical or the surface of a chemically processed the layer or silicon carbide (SiC) of the plural shapes are formed in ceramic layer functional such as fine powder impurities or preferably is prevented.

Electrode for use in connection with a between the power delivery means or electrical connections itself building electrode extended as having a thermal expansion rate similar to, .both salient cursor cross-sectional area without having the common point that in electrical resistance heating since in similar to an in, plurality of electrodes (E1, E2) liver electrode portion as well as power delivery means or electrical connections both combined singular body of molded article or singular body disclosed is a molded article can be assembled into a unit and can also be provided in the compression..

As such plurality of electrodes part molded or molded article unit is installed in the lower part an upper or (Rb) base portion the electrode numerous the required power delivery means (T1, T2) is reduced the necessary space in installations of the monitor is, electrode portion and power delivery unit to generate at the junction between resistance factor precludes yet, overlapped of the reactor that facilitates of it as well as from, the motor chamber receives a motor for glass impact safety provides benefits.

Number 1 core means (C1) and (C2) means core number 2 corresponding each electrical group of the electrode portion described front and and is connected on an electric circuit group of core information by local configuration of is means for determining an format, transmitting uncompressed Image data.

In the present invention, electrode portion group is moveable between an if can be independently fed and, core group electric heating takes corresponding core group on the LCD may be alternatively, if necessary core group on the LCD is varied, the potential difference or current while controlling may be loaded with also the supply of.

Each electrode group part supplied to it independently is moveable between an a power supply system and the spatial power-wise the core disposed, method connection between electrode portion, power supply specifications as a mask onto circuit being joined to one another in a series and/or parallel format power can construct lines.

Number 1 electrode portion (E1) the power delivery means (T1) number 1 (V1) power supply number 1 through number 1 core means (C1) from heating required electrical independently fed and is and is constructed so as to allow, the number 2 number 2 electrode portion (E2) power supply number 2 through power delivery means (V2) (T2) from said number 2 core is required electrical heating means independently fed and a method are reproduced is connected to the semiconductor layer..

Number 1 number 2 power supply power supply (V1) and (V2) high-voltage-low-current characteristic output of high current-on a low-voltage electric input converting electric furnace a function a DC supply power AC if necessary a with comprises a submarine power converter, (V1, V2) power supply receiving a separate power converter which may be comprised of separately system, or one or overall power conversion system may be comprised of a..

Silicon and precipitation electric heating-wise core during core units and silicon precipitation parts in the current flowing between two electrodes the display unit displays images and the electric resistance which are attached to so that set correlated-in potential, that can be used in the present invention power supply number 1 number 2 power supply (V1) and (V2) the core quantity per a, the caption data to the caption or core group core formed on a center of an voltage and current over time with the selecting one electrical heating rate controls the. embodiment.

The power supplies of the two types is assigned to only reactor of non-magnetic material (V1, V2) one may or plurality of non-magnetic material since the process, hardly generates wastewater, such as may be used with, one or more contained in the process, hardly generates wastewater, of non-magnetic material (C1) is number 1 number 1 core means, and electrically interconnected by the power supply (V1) is coupled to or process, hardly generates wastewater, and/or one or plurality of non-magnetic material is contained in the power supply number 2 (V2) and (C2) means core number 2 number 2 power delivery means (T2), and electrically interconnected by the connects the, plurality of precipitation process, hardly generates wastewater, a number 1 core means (C1) or (C2) means core number 2 quantity per a the core for each, group core the caption data to the caption or electrodes are connected to one another in series and/or parallel format power preferably may lines.

In the present invention, a number 1 number 1 core means (C1) number 1 for configuration of unit core which core element doped silicon silicon or pure non-metal material or the carbon based material includes one made of a resistive materials such as.

Won the cross shape, elliptic or polygonal (triangular, rectangular, hexagonal, such as octagon) in rod (rod), wire (wire), filament (filament), bar (bar), strip (strip) and ribbon (ribbon) and, concentric cross-section, concentric an ellipsoidal or concentric a polygonal conduit (conduit), tube (tube), cylinder (cylinder) and duct (duct) the selected can be one.

Number 1 core means (C1) material layers used in the construction of said resistance material is resistivity (resistivity) value of about 1 μohm-cm ohm-cm hereinafter to several or more included within the scope of the it is preferable that the.

In preferred embodiment, said resistive materials a, (i) tungsten (W), rhenium (Re), osmium (Os), tantalum (Ta), molybdenum (Mo), (Nb) [...] , iridium (Ir), ruthenium (Ru), technetium (Tc), hafnium (Hf), rhodium (Rh), vanadium (V), chromium (Cr), zirconium (Zr), platinum (Pt), thorium (Th), lanthanum (La), titanium (Ti), ruthenium (Lu), yttrium (Y), iron (Fe), nickel (Ni) and aluminum (Al) the selected 1 species or 2 including at least one metal element selected metal or alloy or ; (Mo-Si) cargo silicon molybdenum (ii), lanthanum [...] (La-Cr-O) and zirconia and process the selected 1 species or 2 including at least one component, or multi-ceramic-; or (iii) amorphous carbon, graphite and silicon carbide (SiC) the selected 1 species or 2 including at least one component can be carbon-based material.

Number 1 and core means (C1) a resistive materials material layers used in the construction of said among a versatile material such as selected on the, use can be made of,.

Number 1 used in the present invention of the core element as well as electrical properties formed outwardly of core element (D1) part precipitation number 1 for impurity pollution of unnecessary parts of the corner areas in the wire, inorganic impurities purity less preferably component preferably use of material.

And, number 1 core unit fabricated and used in the present invention during or a silicon precipitation in operation purity prior to use hydrogen, nitrogen, argon or helium atmosphere in range 400-3,000 °C the heat treatment at a temperature that is to be included in the wire box or a wire box impurity resid converting an is nice, such heat treatment used in the present invention made from a precipitation-reactor or in prior art, available is provided while electric heating in reactor precipitation hot embodiment. may be.

While, number 2 core means (C2) contained in the core unit number 2 in high purity polycrystalline or single crystal of pure silicon (undoped silicon or intrinsic silicon) and/or n-or p-type doping number (dopant) including a can be fabricated from silicon doped.

That the duct shape a number 1 won cross-section as well as core means (C1), elliptic or polygonal (triangular, rectangular, hexagonal, such as octagon) in rod (rod), wire (wire), filament (filament), bar (bar), strip (strip) and ribbon (ribbon) and, concentric cross-section, concentric an ellipsoidal or concentric a polygonal conduit (conduit), tube (tube), cylinder (cylinder) and duct (duct) the selected can be one.

In the present invention, silicon rod the cross-section of core element to the cross-section of but may have various forms, precipitation time over most layer to the extent that the contact or oval won. type.

The reproductivity of the laser diode by core element are referenced to each core means (C1, C2) form of using or are useful for commercial purposes can be obtained material, producing or processing cost, electrode portion and core means as a mask placement characteristics spatially may be selected according to the character type so, two core means (C1, C2) and/or service period for each core means all of contained in the core units may made in the shape of, also and a 2c 2e also as illustrated by finding the different forms may be loaded with.

An individual core means (C1, C2) contained in the core unit won cross-section ([...]) in rod-shaped in general as not to overlap one another but be, rod-shaped and strip (or ribbon) type, or rod-shaped, tubes, type may be used as a light-weight, cross sectional shapes as to simulate the core units can be the fixing member and electrical and electrical contact is under the consideration that the installed (E1, E2) the electrode portion is groove is in a long circle shape processing can easily and effectively affect a human.

The present invention that can be used in of the existing method set of core means (C1, C2) of the reactor core means as well as vertical, cross-section diameter of about 3-30 millimeter within range within range 5-100 millimeter about or diagonally such vertical is supplied to and the height approximately 0.5-6 m of compositions and methods using cross-linked which, may be selected such that, two core means substantially equal to the preferably heights.

In addition to the size of a cross section and different heights core means also resolving the signal of a (C1, C2) 2a 1A-1 and 1A-1 a illustrated '2A-1 and 2A-1 or' corresponding to distance between a pair of vertical-wise a core the distance between center core element, i.e. a pair of there is provided an electrode to the typical value of the distance between centering, won cross-section core element ([...]) for when this value comes out finished usually a silicon rod back about average diameter to be contained within the range 1.2-1.8 times preferably a.

On the other hand, precipitation reactor inner space (Ri) possible for a large number of core unit for establishing predetermined sized silicon particles can be evaluated as much rod the center precipitation reaction surface area associated with productivity and reactor for reaction yield the, adjacent core unit of the distance between the center element vertical core even for displayig the shortest distance is about 1.2-2.4 times to be contained within the range back preferably a.

The present invention according to productivity and reactor and effect core (Rb) base portion in order to have the electrode portion corresponding means can be individually a free space from an antenna possible from the units and there is provided an electrode the plane of form allows optimization of the layout by fixing the entire steering, is disposed (C1, C2) is emitted to the core means, core group and core units preferably placement of seperately.

Core means (C1, C2) in the present invention, core group and core-wise the transmitter further includes a valve stem can be independently fed and a power supply system is driven by the first power, disposed according to the inverting or electrodes-wise core of said electric flow with the order of the series and/or parallel type of electric circuit in connected method can be is determined.

In a possible position of a system power supply, electric circuit in batch mode the core unit or the inverting there is provided an electrode potential difference and includes a core unit, as they only have to be a current is supplied to electrical energization of series and parallel and interconnectable any way during. lower is applied.

However, all core unit both parallel fashion the only potential difference-wise core connecting the high current was too low is desired in which the container has supply of, too much core units maintain connecting the manner series circuit's mouth is instead, output stage. undesirable unavoidable that there is some potential difference between.

Serially connected the number of unit core contained in the core is dependent to the electrical characteristic and in units of which circuit's mouth, about 100-200 V potential difference between output stage so that the current does not exceed core means (C1, C2), core electrical connection-wise core group and in-line and parallel properly combination power supply preferably constitutes a system.

On the other hand, core when, based on the longitudinal direction of unit, one core element straight-type, U-type, W-type is applied both end a pair of electrodes (E1, E2) can be provided and fixed to.

E.g., to (C1) means core in Figure 1 number 1 as exemplary, core units U-type (hereinafter, 'integral' photolithography) a pair of in the form of well to part there is provided an electrode (E1) can be is fixedly installed.

Or of Figure 1 number 2 core means as is exemplified to (C2), core unit is vertically installed a pair of the vertical core element transmitted through a signal line, and on the heat both upper end serves (bridge) that is responsible for horizontal core element portion the grip. an individual core unit are efficiently coupled electric whole form (hereinafter, 'coupling structure for anti-' photolithography) in a pair of an article being heated is provided there is provided an electrode may be.

An individual core means included in said nickel alloy with excellent resistance to wear a core unit, such as one core element or for the direct shaping of a plurality of the element portions are essentially a second web and joining the core units provide a way to make the connected-type U may be, also number 1 as illustrated 1 (C1) contained in the core means core number 1 forms a utilized mainly to the grafting unit can be.

A method of this type provided number 2 number 2 core means (C2) contained in the core unit the inputted telephone number is stored is, silicon material core element portion first prepared, using arc/plasma in an atmosphere in purity area together the U-shaped singular body is followed by the load.

Two core means core units contained in the (C1, C2) for said a plurality of cores, such as the is element portion, a pair of there is provided an electrode part (E1, E2) a perpendicular to the two vertical core element portion and a stand 2 serves (bridge) electrically element portion core of care should be taken to ensure that that are both connected..

Wherein, the connection of element portion core (i) core element portion anchor to or mechanically machining, welding means (ii), for example by arc/or plasma or by melt-sticking, (iii) coupling device of ube or wire type of component for example by adhesive bonding, such method enables to react at a lower temperature (iv) a method such as. can be utilized.

Such assembly-like construction the method number 1 number 2 units and core are utilised to both unit core in a form which can be to the typical, an individual core formed between vertical and horizontal core element such as portion but may be material specifications, even when used for a and materials processing member decodes the embodiment of the present invention with a fixing member of the back't it is necessary to.

For example, thinner than a pair of vertical core element part assembly units core number 2 when-shaped configuration, leg serves for producing a false element portion core of approximately the same cross-sectional area, and using silicon material, cross sectional shapes in lieu of the silicon is different in magnitude from the a the present invention according to. a non-intrusive even when used for a material resistance.

Number 2 core means (C2) with the silicone material in-shaped configuration for assembling, serves leg portion core element of number 1 core means (C1) that can be used in by finding the material and thus the resistance when the, according to a temperature corresponding electrical properties by considering cross, of physical, for example, length, and the specifications for selecting because, vertical core element portion both and facilitate a method for facilitating the may be secured preferably in parallel connected.

Precipitation reactor according to the present invention the reaction gas into the inner space (Ri) the source (Gf), number 1 number 2 core means core means (C1) and/or (C2) outwardly of silicone nickels are precipitated precipitation part number 1 number 2 (D2) (D1) and/or precipitation portion can be is formed on the first.

Wherein, is outwardly from end surface an individual core addition, the height of vertical direction of surface, i.e. a thickness direction or a cross-section which means radially, silicon precipitation operation forms fine air layer between the each precipitation part of diameter or cross-section (D1, D2) name of a/the supply circuit switches sequentially the power while diagonal distance of a desired magnitude polycrystalline silicon rod is formed.

Reaction gas that can be used in the present invention the monosilane (SiH4) (Gf), this ammonium thread column (SiH2Cl2), silane tetrachloride and (SiHCl3) three ammonium threads column (SiCl4) the selected 1 species or 2 which contains an silicon-containing at least one, the silicon containing component for pyrolyzing and/or hydrogen reduction reactions of the deposition silicon elements said silicon precipitation part (3) form to.

Rod-like polycrystalline silicon in producing a spandex yarn, said reaction gas (Gf) silicon-containing component but may contain only, hydrogen (H2), nitrogen (N2), argon (Ar), helium (He) and hydrogen chloride (HCl) the selected 1 2 one or at least one further includes for gas components such as electrodeposition reaction for controlling the composition of exhaust gas characteristics and can be (Go).

Silicon precipitation a reactor for in connection with conditions, precipitation reactor inner space (Ri) absolute pressure based on pressure and the reaction within the range 1-20 bar precipitation part number 1 number 2 (D2) (D1) and/or precipitation part based on temperature in surface within range 650-1,300 °C at reaction temperatures of precipitation part number 1 number 2 (D2) (D1) and a silicon on the surface of precipitation part preferably precipitating a.

Otherwise silicon precipitation part, wherein the reaction pressure is 1 bar (D) of silicon at the draft beer precipitation a too low speed a are compositions thereof pulled down and productivity is't.

Furthermore, wherein the reaction pressure draft beer precipitation of a V provided to the more advantageous in productivity, these properties are silicon-containing component mono chamber. surface knob section forms an upper more when they are three ammonium threads column. column step.

Just, precipitation draft beer the reaction bottom of the suction pressure to thereby enable maintaining high too level excess 20 bar surface, precipitation problem in addition to peripheral IC and its production cost of device for ensuring safety of the strain is too high, reaction material feed rate per unit of time the pressure slowly rises and too (moles/hr) said core means (C1, C2) (D1, D2) part precipitation surface of electrical heating of only acceptable reaction temperature maintained within a range on the difficult-to-coat negative. become serious aspects.

Precipitation reactor inner space in said core means (C1, C2) (Ri) is formed outwardly from a precipitation and precipitation of silicon at the surface that must be point and continue, said inner space (Ri) the silicon precipitation part according to the position (D1, D2) and having a temperature above where otherwise a, temperature measuring convenience and reliability by considering reaction temperature silicon precipitation portion (D1, D2) are referenced to a surface facing it is preferred that a.

The reaction temperature (Gf) gas all of the reactants employed in the to accomplish different but dependent on the composition of the component and, reaction temperature is too low, molybdenum, and zro2. precipitation otherwise 650 °C draft beer precipitation a is pulled down and productivity't.

Furthermore, molybdenum, and zro2. precipitation from the demodulator reaction temperature is 1,300 °C increases by unity while at a temperature above the exhaust gas (Go) component among the additional delay, a new recovery recycling adheres by the refrigerant cooling means is too content of those components, center of in addition each core means (C1, C2), i.e. core element in 1,400 °C temperature may be greater than the silicon during the driver that the larger from a risk in a collapse rod, precipitation reactor shell (Rs) voltage in pellicle particle into conductivity chamber. is undesirable because the increased too.

Therefore, acceptable precipitation silicon in the present invention a temperature range (Gf) reaction gas the reaction temperature (Go) and reducing exhaust gas composition, pressure, silicon precipitation speed, energy efficiency, etc. taking into account conditions such as 650-1,300 °C range preferably set in.

Batch according to the present invention (batch) polycrystalline silicon rod-like manner in producing a spandex yarn, reactor operation time is operated by a global word silicon precipitation part diameter of surface area and (D1, D2), core means (C1, C2) electrical heating of burden, such as heat loss into precipitation reactor shell (Rs) to the third reaction gas (Gf) composition and the feeding speed, reaction temperature, , wherein the reaction pressure, power supply and the like driving conditions the reactor such as a, and setting an upper side of the base, over time even when the optimum vary the preferably.

Number 1 core means according to the present invention using electrical heating of (C1) (C2) means core number 2 in is preheated, number 1 core means (C1) a resistive materials by a spaced apart in number 2 core means (C2) a silicon materials are completely excluded the probability of contamination can't.

However, by the present invention the target number 2 core means (C2) stage the cause of a low preheating high pressure atmosphere at ordinary pressure or non-hole in is embodiment, the number 1 core means (C1) but the temperature of low to low less than about 3,000 °C hereinafter, there is in addition a high energy ion having from a, the present invention heat treated opposite direction of the spring force direction in advance according to the explained impurity in a surface of core element number 1 component evaporates or sputtering phenomenon occurs to constitution: core element number 2 number 2 precipitation portion substantially't risk to drop down to purity.

While, resistive materials of number 1 core element outer part, a precipitation part number 1 formed in a direction (D1) (D2) the number 2 precipitation part resistance in comparison to the material by the components included in relatively high impurity pollution with the water tank, according to the present invention (D1) (D2) precipitation part number 1 number 2 and a precipitation part class semiconductor polycrystal silicon and the class supply circult each polycrystalline silicon can be produced.

The different use same polycrystalline silicon may also its simultaneous fabrication within reactor precipitation may be possible but, precipitation part number 1 number 2 (D2) (D1) and a semiconductor or supply circult precipitation part class polycrystalline silicon only. also to produce.

The silicon precipitation operation first conductive layer according to the present invention for guiding a rod to a slitter silicon value maximum allowable distance or diagonally such diameter is adjacent core unit of non-magnetic material prior to the actual time-out comes to contact additional precipitation operation the condensed vapor is work and product recovery disassembling reactor is especially is unload-operated.

If resistive materials of external (C1a) core element number 1 precipitation part number 1 formed in a direction (D1) placed at the rear side of the further enhanced if quality of, (C1a) core element number 1 number 1 of the components included in precipitation unit to minimize the possibility of from becoming contaminated (D1) equal to the number of to, number 1 core means (C1) by the present invention which is made from material-resistance, such that (C1a) core element number 1 on the surface of a single or a plurality separating layer (C1b, C1b ', C1b "; also reference 7 also 3-) is to configure the of the plural shapes are formed in preferably.

Silicon precipitation process impurity pollution of (D1) part precipitation number 1 main body so as to be moved (C1a) core element number 1 (C1b) of the plural shapes are formed in a separation layer surface of number 1 if can be is to produce a core, core means (C1) and (C2) means core the present invention according to number 1 number 2 a solar cell is very high purity in both liquid/or semiconductor class polycrystalline silicon simultaneously makes possible the production is formed inside the tie..

Number 2 of the existing method of silicon material in silicon precipitation reactor core means (C2) or resistant material among others the number 1 core means (C1) of the first and the second treating by finding the but, according to the present invention, also over 7 also from 3 as exemplary, (C1a) core element number 1 (C1b) of forming a separation layer surface of number 1 number 2 core means core means (C1) and (C2) of silicon material depositing process, hardly generates wastewater, and with reference, number 1 a electrically heatable first core means (C1) then (C2) is preheated in number 2 number 2 core means core means (C2) for electric heating and starts two core means (C1, C2) (D1, D2) outwardly of silicon precipitation part as to respectively form the rod-like high purity polycrystalline of manufacturing may be loaded with.

Therefore, number 1 core element (C1a) formed on the surface of the separation layer (C1b) the, precipitation part number 1 (D1) for forming is started ([...] ; substrate) that is connected to a surface responsible for role of, silicon precipitation during precipitation part number 1 from (C1a) core element number 1 (D1) impurity component being moved in part is responsible for initial, precipitation part number 1 (D1) that is formed in a type of material from polycrystalline silicon, structure or properties which differs in a number 1 after the rod making silicon accordingly precipitation part (D1) and a can be ease of separating the.

Separation layer (C1b) the or multiple may be of layers, separation layer (C1b) having five of many types of than if the layered, the formation of separation layer (C1b) time, cost and manpower to current traffics the present invention according to an economic advantage is risk of the second scattered reflection is elastically, separation layer (C1b) these five hereinafter types of layer preferably formed on the.

The present invention according to (C1b) separation layer between the two metal in high temperatures or certain components prevents diffusion of element (diffusion barrier) a contact plug which various edit functions necessary to, separation layer a (C1b) an isolated functional DC bias each layer, (i) silicon (Si) nitride, oxide, carbide or oxynitride include or, (ii) tungsten (W), rhenium (Re), osmium (Os), tantalum (Ta), molybdenum (Mo), (Nb) [...] , iridium (Ir), ruthenium (Ru), technetium (Tc), hafnium (Hf), rhodium (Rh), vanadium (V), chromium (Cr), zirconium (Zr), platinum (Pt), thorium (Th), lanthanum (La), titanium (Ti), ruthenium (Lu) and yttrium (Y) the selected 1 2 one or coloring metal element in an amount of at least one nitride, oxide, silicon cargo, carbide, oxynitride or silicon oxide may include a cargo.

(C1b) separation layer according to the present invention a silicon or such as Chinese cabbage, cabbage, functional separation in a liquid metal for (C1a) core element number 1 select from among elements made of nitride (nitride) may be included in these, the nitride such Si-N, W-N, Os-N, Ta-N, Mo-N, Nb-N, Ir-N, Ru-N, Tc-N, Hf-N, Rh-N, V-N, Cr-N, Zr-N, Pt-N, Th-N, Ti-N, Lu-N, Y-N W-V-N nitride and containing first/second/third polyester such as, Ti-Si-N, Ti-C-N, Hf-Ta-Mo-N such as mixed metal nitride may include.

Such nitride-based components most-melting-point solder is at least 2,000 °C other physical properties or (C1a) core element number 1 number 1 number 1 which there is a difference (D1) and a precipitation portion (C1a) core element can engage an component metal impurities from since separation layer (C1b) can be conducted by to, at reaction temperatures of high temperature nitride-based separation layer (C1b) nitrogen component items from contaminating the precipitation part number 1 (D1) larger risk of separation layer comprising single or multi-not executed, not to download can be used in (C1b), oxide-based, nitrification current price oxide, carbide-based, or contains no silicon silicon freight orgin separation layer (C1b) with number 1 core means. may then be replaced on the cornea (C1).

(C1b) separation layer according to the present invention a silicon or such as Chinese cabbage, cabbage, functional separation in a liquid metal for (C1a) core element number 1 is select from among made of (oxynitride) oxynitride of elements may be included in these, the oxynitride such Si-O-N, W-O-N, Os-O-N, Ta-O-N, Mo-O-N, Nb-O-N, Ir-O-N, Ru-O-N, Tc-O-N, Hf-O-N, Rh-O-N, V-O-N, Cr-O-N, Zr-O-N, Pt-O-N, Th-O-N, Ti-O-N, Lu-O-N, Y-O-N Si-Al-O-N and oxynitride containing first/second/third polyester such as, Hf-Zr-O-N, Mo-W-O-N, such as mixed metal oxynitride V-Mo-W-O-N may include.

Such oxide nitrification current price most-melting-point solder is components of at least 2,000 °C other physical properties or (C1a) core element number 1 number 1 number 1 which there is a difference (D1) and a precipitation portion (C1a) core element can engage an component metal impurities from since separation layer (C1b) can be conducted by to, high temperature at reaction temperatures of nitrogen (C1b) separation layer nitrification current price oxide precipitation part items from contaminating the number 1 component (D1) larger risk of separation layer comprising single or multi-not executed, not to download can be used in (C1b), nitride-based, oxide-based, carbide-based, or contains no silicon silicon freight orgin separation layer (C1b) with number 1 core means. may then be replaced on the cornea (C1).

(C1b) separation layer according to the present invention a silicon or such as Chinese cabbage, cabbage, functional separation in a liquid metal for (C1a) core element number 1 oxides of the selected elements among made of (oxide) may be included in these, oxide the Si-O, W-O, Ta-O, Nb-O, Hf-O, Zr-O, Ti-O W-V-O oxide and containing first/second/third polyester such as, Ti-Si-O, Sr-Ti-O, Sr-Ti-Nb-O, Sr-La-Al-O, La-Mn-O, Sr-Hf-O, Nb-Ta-O, Ba-Zr-O, Ba-Mo-O, Ba-Ce-O, Ba-Ti-O, Ca-Ti-O, Sr-Zr-O, Sr-Mn-O, Hf-Ta-Mo-O, Y-Zr-O such as mixed metal oxide may include.

Oxide-based components 1420 °C is substantially the melting point of at least other physical properties or (C1a) core element number 1 number 1 number 1 which there is a difference (D1) and a precipitation portion (C1a) core element can engage an component metal impurities from since separation layer (C1b) can be conducted by to, at reaction temperatures of high temperature part for spraying nitrogen oxide based separation layer (C1b) number 1 (D1) is also risk of items from contaminating the precipitation part from a single or multiple separating layer (C1b) can be used in, nitride-based, nitrification current price oxide, carbide-based, or contains no silicon silicon freight orgin separation layer (C1b) with number 1 core means. may then be replaced on the cornea (C1).

(C1b) separation layer according to the present invention a silicon or such as Chinese cabbage, cabbage, functional separation in a liquid metal for (C1a) core element number 1 select from among elements of carbide (carbide; carbide) made of such may be included in these Si-C the carbide, W-C, Os-C, Ta-C, Mo-C, Nb-C, Ir-C, Ru-C, Tc-C, Hf-C, Rh-C, V-C, Cr-C, Zr-C, Pt-C, Th-C, Ti-C, Lu-C, Y-C Si-W-C a carbide containing first/second/third polyester such as, Ta-Hf-C, Si-Ti-C W-C-N a carbide mixed metal such as, Ta-C-N, Zr-C-N, Ti-C-N a transition metal such hydrocarbons can be include a nitride (carbon nitride).

Such carbide-Cr based of at least 2,000 °C most-melting-point solder is are other physical properties or (C1a) core element number 1 number 1 number 1 which there is a difference (D1) and a precipitation portion (C1a) core element can engage an component metal impurities from since separation layer (C1b) can be conducted by to, high temperature at reaction temperatures of number 1 is carbon component (C1b) separation layer-based carbide precipitation part (D1) processor risk of items from contaminating the rather a single separation layer (C1b) more a nitride, oxide nitrification current price , or contains no silicon silicon freight orgin separation layer (C1b) number 1 by precipitation part. may be interrupted at that wavelength from (D1).

(C1b) separation layer according to the present invention a silicon or such as Chinese cabbage, cabbage, functional separation in a liquid metal for (C1a) core element number 1 select from among cargo Si, which Si-addition lowers elements made of (silicide) may be included in these, the cargo silicon such W-Si, Os-Si, Ta-Si, Mo-Si, Nb-Si, Ir-Si, Ru-Si, Tc-Si, Hf-Si, Rh-Si, V-Si, Cr-Si, Zr-Si, Pt-Si, Th-Si, Ti-Si, Lu-Si, such as of the reaction of the halide and silicon containing first/second/third polyester Y-Si W-V-Si, W-Ti-Si-N, Ti-Zr-Si-C, Hf-Ta-Si-N silicon mixed metal such as cargo can be included, the silicon is oxygen element added silicon oxide shipments may be included in component contains no silicon.

Such silicon contains no silicon freight orgin or is so 1,420 °C-melting-point solder is are also component elements constituting can be controlling the content of the physical properties (C1a) core element number 1 or number 1 number 1 which there is a difference (D1) and a precipitation portion (C1a) core element can engage an component metal impurities from since (C1b) separating layer single or multiple can be conducted by to, nitride-based, oxide-based, oxide nitrification current price or carbide-based separation layer (C1b) with number 1 core means. may then be replaced on the cornea (C1).

As taught or more, the functional separation a separation layer (C1b) boron (boron) nitride, oxide, carbide or oxynitride such as with boron containing component excellent properties can also be provided with a which may be, high temperature at reaction temperatures of boron-based separation layer (C1b) number 1 (D1) is boron component of items from contaminating the rather a risk of precipitation part processor nitride-based rather than single separation layer (C1b), oxide nitrification current price , or contains no silicon silicon freight orgin separation layer (C1b) by precipitation from (D1) part number 1 must the second intimately intermixed followed by the load.

According to the present invention (C1a) core element number 1 (C1b) of the plural shapes are formed in a separation layer surface of number 1 core means constitutes a (C1) in a variety of method can be embodiment.

For example, front taught such as a functional--containing constituent unit with a separation layer a that can be used in the present invention number 1 (C1a) core element to surround the light source surface of the separation layer (C1b) number 1 of the plural shapes are formed in core means (C1) can construct.

The separation layer to separate no using assembling type of constituting unit (C1b) layer when the for forming, for each ingredient functional separation selected predetermined size, shape and number said separation layer structural units respectively first host materials either before or after the prepared, said number 1 (C1a) core element is covered with a disc cartridge or assembled to complete (C1b) to the separation layer by, said number 1 core means (C1) on the fuzzy membership function and the recording operation..

A plurality of method is the grip. element portion core number 1 number 1 core units assembly-like manner comprising a, said separation layer in the thickness direction a constituting unit having ingredient functional separation said one or plurality of discrete layer being disposed above the nitride layer cylinder having a polygonal cross section is won, polygonal, manufacturing separately having closed or broken shapes concentric or concentric power consumption on the base unit side prepared number 1 to surround the light source surface of element portion core assembling includes units.

According to method (C1a) core element is number 1 between separation layer surface and, isolation layer 12 and a separation layer or between separation layer constituting unit to obtain a desired between where there is a space although it is possible, according to the present invention silicon precipitation receiving unit receives light it projects out of the core element to. when forms a main factor disorders.

Alternatively, the, functional ingredient separation selected predetermined thickness for each said number 1 (C1a) core element while coating directly onto a surface of the base for crystal face may be formed as regards said separation layer (C1b), direct coating of an abstraction layer the application have a plurality of first (C1b) separation layer made in device the same coating may be to form, or a separate coating formed by using device may be.

According to method (C1a) core element number 1 is surface between separation layer isolation layer 12 and a GaN layer or between separated to obtain a desired required without space preferably the separating layer can be outwardly core element according to the present invention silicon precipitation receiving unit receives light to. when forms a main factor disorders.

On the other hand, front taught such as separation layer constituting unit direct coating of an abstraction layer method and assembly of by an electrochemical reaction surface layer formed on surface of exterior material number 1 core means. also constitutes a (C1).

And, according to the present invention (C1a) core element number 1 a separation layer surface of all or some (C1b) to form a coating or necessary, which may be embodiment but in device, used in the present invention from a precipitation-reactor or available hot draft beer precipitation in inner space (Ri) may be loaded with embodiment.

The, draft beer using an isotropic (C1a) said number 1 core element and mounted on the upper part of the electrode, the electrode by supplying electricity to the heating (C1a) core element said number 1, a separation layer internal reactor precipitation said delivering a source gas for forming the (C1a) core element number 1 (C1b) of the plural shapes are formed in a separation layer surface of, number 1 core means (C1) .may be made.

And, number 1 core element (C1a) surface of device into separate part of a separation layer (C1b) is removed, to form an the autocomplete method and a core element number 1, precipitation hot or reactor from a precipitation-used in the present invention and the remaining internal draft beer (C1b) separation layer also formed..

The, one or multiple autocomplete method and number 1 core element electrode portion (E1, E2) connecting the axial fan to an gas and of the deposition reactor, electrode portion (E1, E2) number 1 autocomplete method and by supplying electricity through the heats core element, a separation layer internal reactor precipitation delivering a source gas for forming surface core element number 1 OGM further forming a separation layer (C1b), that can be used in the present invention of fabricating elements on core number 1 may be loaded with.

According to the present invention a single or a plurality of layers (C1b) separation layer a by receiving electric current into the, method forming an abstraction layer which can be used at, (i) physical vapor deposition (Physical Vapor Deposition; PVD) (and a sputtering vapor deposition method (sputtering deposition), short pulsed laser deposition method (Pulsed Laser Deposition), ion implantation, includes such as ion plating); chemical vapor deposition method (ii) (Chemical Vapor Deposition; CVD) (atmospheric pressure CVD, organometallic CVD (Metallic Organic CVD), includes such as Plasma-Enhanced CVD (PECVD)); for (iii) including various spray (spray) artworking method aerosol vapor deposition (aerosol deposition) (Melt Spray Coating) spraying melt; [...] , the shroud having heat reflective layers (iv) (Thermo-Reactive Deposition and Diffusion; melt the salt law and powder method); and (v) sol- the gel law solution method and producing a variety of coatings such as selected among others techniques. may be utilized.

According to the present invention number 1 core means (C1) to form (C1a) core element number 1 is an individual formed on the surface the thickness of the separation layer (C1b) and characteristics of impurities (C1a) core element number 1, a separation layer functional ingredient separation, separation layer forming method which the proportional factor K having uniform or the like, the, can generally can from nanometer can be methods using cross-linked anti-millimeter.

In the present invention, separation layer (C1b) if thicker than sum of thickness of 20 millimeter (C1a) core element number 1 number 1 from precipitation part (D1) is impurity protect that although there are a multiplicity of, and is separated from the, separation layer (C1b) thickness of terminal pins are disposed in a position (C1b) separation layer up in for forming in a position corresponding to at too is installed in (C1b) separation layer as well as by the back light unit to the gradient (gradient) also disposed in a position corresponding in precipitation part number 1 (D1) surface temperature in in on called carried out, the amount of shift.

While, recently are developed atomic layer or the surface of the substrate forming technique, dielectric thin film and an nanometer 10 nanometer (C1b) separation layer thinner than Chien search circuit unit number 1 number 1 from (C1a) core element (D1) is impurity precipitation part to prevent may, (C1b) separation layer and (C1a) core element number 1 can be generated at the surface scratch on a structure (defect) and resonance 10 nanometer thickness (C1b) layer separates when it is preferred that a of which a diameter is less than.

Therefore, number 1 according to the present invention by receiving electric current into the core means (C1) (C1a) core element number 1 (C1b) layer the surface sum of thickness of 10 nanometer -20 millimeter range it is preferable that the be contained.

Invention as described above wherein in front of, (C1b) separation layer that has been formed in accordance with the present invention an electrically conductive having a may have electric elements are isolated from the since the electrode portion is electrically connected to the bump (E1, E2) must be connected a number 1 core means (C1) (C1) means core number 1 to end both sides of outermost separation layer (C1b)/ capacitor internal electrodes. must have respect for the well.

If, number 1 core means (C1) a separation layer (C1b) of electrically conductive is excellent in surface number 1 through (C1b) with a separating layer (C1a) core element (E1, E2) electrode portion but may be to enter into contact with the, while separation layer (C1b) to functional separation having electric elements are isolated from the included in the min number 1 (C1b) with a separating layer (C1a) core element does not flow through electrode portion (E1, E2) number 1 to be making direct contact with the core means (C1) electrical heating of which are able to inhibit the, and a cause for a preferably excludes the pre.

On the other hand, precipitation part number 1 from (C1a) core element number 1 (D1) that is spread with respond well elements and the silicon elements capable of binding or using further properties that precipitation part number 1 (D1) selects and outputs one among output pixel impurity pollution of holes and the number 1 core element between (C1b) (C1a) and an isolation layer, plurality separating layer (C1b) between layer of, or separation layer (C1b) can be located on the outer of mandrels, the present invention according to separation layer (C1b) to silicon composition comprising the same as an functional silicon separating further separation layer number 1 is included preferably may a core means (C1).

Added to this case of prodcing silicon layer thickness is supplied to 1 micro m -10 millimeter range is preferably, said thickness impurity pollution if it is less than 1 micro m capable of intercepting is its capacity of, while said impurity pollution portion of oil cooler 10 millimeter thickness capable of intercepting and sprays chemicals in the disposed in a position corresponding space reactor productivity. can be the gloves are automatically discharged from the surface.

With the silicone separating functional composition comprising the same as an silicon separation layer (C1b) with respect to, the present invention according to (Gf) reaction gas as raw material gas using silicon separation layer (C1b) for said number 1 core means can be formed on the surface (C1) a separation layer (C1b) it's may be included.

However, silicon separation layer (C1b) precipitation forming conditions of the present invention according to (D1, D2) part can differ and reaction conditions for forming the, silicon isolation layer 12 and a GaN precipitation part number 1 (D1) determined has many difference face thermal expansion characteristics of structure and preferably so that.

Therefore, functional surface of number 1 (C1a) core element and/or silicon portion separating layer (C1b) a precipitation filtering by the present invention some or all of the manufactured by prior art or reactor, available is provided, and formed in reactor precipitation hot, or a separate coating or thin film forming or reaction of the surface of the. crystal face may be formed.

Core element separation at a surface (C1a) used in the present invention detection layer number 1 the dried rice plants and air clefts process to prepare for the unit core, core element before and after of (Ca), or during (C1b) separation layer or of the output device is formed, or silicon precipitation in operation prior to use range 400-3,000 °C the heat treatment at a temperature that is to be included in the wire box or a wire box impurity resid converting an preferably.

And, number 1 number 1 core units or the at least one heat treatment in a heat-treating core element, or hydrogen, nitrogen, such as helium or argon gas atmosphere such as. to change the way embodiment.

Such heat treatment used in the present invention made from a precipitation-reactor or in prior art, is provided in reactor precipitation hot available, and embodiment, or a separate heat treatment device or coating device embodiment in. may be.

According to the present invention (C1a) core element number 1 (C1b) layer the surface the number 1 core means which exhibits the function of preheater of core number 2 in negative be.

Rather separation layer (C1b) impurity in a high-temperature silicon precipitation process silicon core element number 1 component diffusing into precipitation part (D1) on the first inhibit or block, number 1 core means even the amorphous silicon is very high purity is to provide a method for producing rotation is carried out, the amount.

As taught or more, according to the present invention number 1 number 2 means and core started electrically heatable core means through supplying reaction gas precipitation silicon direction outside the core forming process precipitation hot forming precipitation in microreactors. substantially equal to the process.

Channel produced according to the present invention single crystal or poly-crystalline of (ingot) of varied to 1200 to 4800, block (block), plate (sheet) or film for use also with a raw material for the production (film), number 2 core means (C2) formed silicon rod for precipitation number 2 and number 2 core element but the necessity of separating the hydrogen separately portion, number 1 core means (C1) formed silicon rod for (C1b) separation layer and/or (C1a) core element number 1 number 1 and precipitation part ., it is necessary for separating (D1).

(C1a) core element number 1 generally, separation layer (C1b) and (D1) part precipitation number 1 the component or crystal structure or physical properties face with difference in polycrystalline silicon rod-like since in similar to an in the separation of (D1) part number 1 precipitation do not go microbeam generating green.

At such (C1b) separation layer or (C1a) core element number 1 the number 1 but possibility maintaining force (C1a) core element and/or separation layer (C1b) undo may also be recovered and reused, ..

In the present invention produced polycrystalline silicone product required, so that the finally obtained is emitted to the standard cylindrical or parallelepiped-shaped by working a may package the, large mass (chunk), less mass (lump or nugget), gum piece and particles (fragment, flake, or particle) for example, in such a form milling which has an agitator comprising a during grinding required to steer the behind the surface at for removing impurities incorporated cleaning and drying if there is the specific can package the.

Won to have a cylindrical-shape with processing articles floating zone (floating zone) method for growing single crystal of can be used in, and various irregular in configuration, and the crucible product in size to melt in single crystal or poly-crystalline coating (ingot) of varied to 1200 to 4800 of, block (block), plate (sheet) or film (film) made can be used to.

Hereinafter, basic properties/utilizing a method of the present invention, number 2 number 1 core means core means placement of door represents coarse plane view format by referring to 2f-degree 2a, rapidly and to reduce a memory it should bar, these defined by the present invention are not.

In the embodiment 1

Also won cross-section 2a has a precipitation filtering process, hardly generates wastewater, ([...]) in rod or wire core in the form of the total unit when the signal sent from the signal set is roughly 8, exemplified by is a plane view,

In the exemplary, number 1 number 1 set of 4 (C1) core means core unit wherein the, number 1 core units (1A-1, 1A-2, 1B-1, 1B-2) the core unit 1A-1 1A-2 and a core group-A to number 1, number 1 a 1B-2 and 1B-1 unit core on the B group-core, two number 1 is divided into group core is arranged.

On the other hand, number 2 core means (C2) also 4 set of number 2 core unit occur, number 2 core units (2A-1, 2A-2, 2B-1, 2B-2) 2A-2 and the core unit 2A-1 A group-core to a number 2, core unit 2B-1 2B-2 and a core group-B on the number 2, number 2 core group is divided into two is arranged.

An individual core groups the electrode portion, and the core is unit corresponding to each other and are connected in series, a, an individual core means contained in the core groups the is connected in parallel to each other, corresponding core means (C1, C2) (V1, V2) power supply according respectively to be electrically connected to power supply system occurs.

Draft beer from a precipitation-and number 1 for operation core means (C1) and each corresponding to unit core number 1 (E1) the electrode portion made of electric heating means are fed through power to number 1, number 1 based on electrode portion in → 1A-1 1A-1 A group-core '→ 1A-2 → 1A-2' in order of, simultaneously 1B-1 → 1B-1 B group-core number 1 in '→ 1B-2 → 1B-2' in order of while current flow, is an electric heating (C1) means core number 1, number 2 around the core units is preheats natural.

2a also as illustrated, a nozzle for supplying and discharging gas the necessary space in installations of electrically heatable except that the core means (C1) by a number 1 number 2 heating means (C2) stage the cause of a low preheating the substrate is rotated to form a capillary phenomenon without using a pump, can be individually group and core unit disposed therein, the number 1 and number 2 core unit 2A-1 1B-2 by 1B-1 unit core, the number 1 and number 2 core unit 2B-1 1A-2 by 1A-1 unit core, number 2 the 2A-2 unit core by 1B-1 and 1A-1 unit core number 1, the number 1 number 2 core unit 2B-2 1B-2 and 1A-2 unit core is preheated easily concurrently by. that is movably arranged with.

Number 2 core means (C2) is preferably in a temperature range from 350-1,000 °C is preheated high electric furnace dust of low potential difference which can be heated also, number 2 number 2 and a A group-core core group-B → 2A-1 2A-1 each begins then electric heating to '→ 2A-2 → 2A-2' order of, 2B-1 → 2B-1 '→ 2B-2 → 2B-2' in order of and current, each core quantity per a, core power supply control group temperature of the core means (C1, C2) the required reaction temperature maintained within a range can be adjusted to values very.

Followed by a silicon precipitation according in operation two core means (C1, C2) silicon rod are formed as a, single-core means also 2a in the implemented by precipitation part number 1 number 2 (D2) (D1) and a precipitation portion for guiding a rod to a slitter silicon that does not the size of the deposition approaches a target value in the relevant portions of the items when finishing a precipitation portion reaction show section form of wet liquid to flow down.

Wherein, as exemplary, number 2 from any location space inside a reactor core means and into the source, the preheating is of (C2), the number of pixels in width and that does not finally (D1, D2) layer, or comprises a non-silicon precipitation part key input unit to the processing squeezed, reactor maximizing productivity, core means, core group, core units and optimal the inverting there is provided an electrode used to position is groove is in a long circle shape.

In the embodiment 2

Won cross-section process, hardly generates wastewater, a precipitation filtering has also 2b ([...]) in rod or wire core in the form of the total unit 8 are installed set number 1 core unit and the number of unit core number 2 outlines a moment when a different is the illustrated plane view,

In the exemplary, number 1 number 1 set of 3 (C1) core means core unit wherein the, number 1 core units (1A-3-1A-1) is the single-core placed into groups.

While, the 5 number 2 core means (C2) core unit wherein set of number 2, number 2 core units (2A-5-2A-1) single-core also is placed into groups.

Core means core unit (C1, C2) according the electrode portion corresponding to each other are connected in series, a (V1, V2) respectively the corresponding power supply electrically connected to the conductive medium independent power supply system occurs.

Draft beer from a precipitation-and number 1 for operation core means (C1) and each number 1 core unit corresponding to number 1 (E1) the electrode portion made of kinds are fed through power to electric heating means, based on electrode portion 1A-1 → 1A-1 '→ 1A-2 → 1A-2' → 1A-3 → 1A-3 ' while current flow in order of number 1 (C1) the electrical while a core means, number 1 number 2 ranges around unit core unit core is preheating-rich.

As illustrated also 2b, a nozzle for supplying and discharging gas the necessary space in installations of electrically heatable except that the core means (C1) by a number 1 number 2 heating means (C2) stage the cause of a low preheating the substrate is rotated to form a capillary phenomenon without using a pump, can be individually group and core unit disposed therein, the number 1 number 2 core unit 2A-1 by 1A-3 and 1A-2 unit core, core unit 1A-3 2A-2 unit core number 2 by the number 1, number 2 core unit 2A-3 1A-3 and 1A-1 unit core by the number 1, number 2 core unit 2A-4 1A-1 unit core by the number 1, the number 1 number 2 core unit 2A-5 1A-2 and 1A-1 unit core is preheated mainly by constitution: that is movably arranged with.

Number 2 core means (C2) is preferably in a temperature range from 350-1,000 °C is preheated high electric furnace dust of low potential difference which can be heated also, electrical heating of (C2) means core number 2 number 2 core means begins then 2A-1 → 2A-1 '→ 2A-2 → 2A-2' → 2A-3 → 2A-3 '→ 2A-4 → 2A-4' → 2A-5 → 2A-5 ' in order of and current, the power supply control quantity per a core means core temperature of (C1, C2) the required reaction in a temperature range can be such that the pawl is maintained in.

Number 1 and number 2 number of unit core core unit and even different number 2 from any location space inside a reactor core means (C2) of preheating is effect to the receiving unit of the sheet electrical heating of (C2) means core number 2 can start provided to easily.

In addition two core means is the required reaction in a temperature range from (C1, C2), each holding to power supply formed by controlling an (Gf) by supplying a reaction gas of a desired magnitude (D1, D2) layer, or comprises a non-silicon precipitation part key input unit squeezed to the sprung blade and can be treated with water, reactor productivity to be.

In the embodiment 3

Also 2c has a precipitation filtering process, hardly generates wastewater, total 12 set of core units are installed number 1 core means (C1) and (C2) is number 2 core means different numbers of core group and core composed outlines brake only is the illustrated plane view,

In the exemplary, number 1 core means (C1) ([...]) won in the cross-section in the form of rod in core unit wherein 4 set of number 1, number 1 core units (1A-4-1A-1) the single-core is placed into groups.

While, (C2) means core number 2 number 2 core unit wherein the set of 8, cross-section ([...]) won 2A-1 unit core in the form rod in, 2A-2, 2A-4 and 2A-3 A group-core to a number 2, cross-sectionally rectangular unit core in the form or ribbon loads 2B-1, 2B-2, 2B-3 2B-4 and a core group-B on the number 2, number 2 core group is divided into two is arranged.

An individual core groups the electrode portion, and the core is unit corresponding to each other and are connected in series, a, number 2 number 2 and a A group-core core group-B each other is connected in parallel to the, corresponding core means (C1, C2) (V1, V2) power supply according respectively to be electrically connected to power supply system occurs.

Draft beer from a precipitation-and number 1 for operation core means (C1) and each number 1 core unit corresponding to number 1 (E1) the electrode portion made of kinds are fed through power to electric heating means, based on electrode portion 1A-1 → 1A-1 '→ 1A-2 → 1A-2' → 1A-3 → 1A-3 '→ 1A-4 → 1A-4' in order of while current flow, is heated and the electrical (C1) means core number 1, number 1 number 2 ranges around unit core unit core is preheating-rich.

2c also as illustrated, a nozzle for supplying and discharging gas the necessary space in installations of electrically heatable except that the core means a number 1 number 2 heating means (C2) (C1) by capillary phenomenon without using a pump, stage the cause of a low preheating if so, , core group and core unit is vertically, is symmetrically disposed.

For example, number 2 core unit 2A-1 1A-2 unit core by the number 1, the number 1 number 2 core unit 2A-2 1A-1 unit core, by 1A-3 and 1A-2, number 2 the 2B-2 unit core by 1A-3 and 1A-2 unit core number 1, the number 1 and number 2 core unit 2B-1 1A-4 1A-3 unit core is preheated mainly by. that is movably arranged with.

Number 2 core means (C2) is preferably in a temperature range from 350-1,000 °C is preheated high electric furnace dust of low potential difference which can be heated also, number 2 core group A and a B → 2A-1 2A-1 each begins then electric heating to '→ 2A-2 → 2A-2' → 2A-3 → 2A-3 '→ 2A-4 → 2A-4' in order of, 2B-1 → 2B-1 '→ 2B-2 → 2B-2' → 2B-3 → 2B-3 '→ 2B-4 → 2B-4' , current is order of each control flow, each core quantity per a, core power supply control group temperature of the core means (C1, C2) the required reaction temperature maintained within a range can be adjusted to values very.

The, number 2 number 2 and a A group-core electrical heating of B group-core for simultaneously but may be, of preheating is executes more quickly than the executable code number 2 core group-A number 2 obtained when first start and for electrical heating of A group-core, B group-core number 2 a electrically heatable preheating of number 2 number 1 core means are then expressed accelerated to A group-core, electrical heating of B group-core number 2 initiates. may be.

Followed by a silicon precipitation two according in operation silicon rod are formed as a core means (C1, C2), the implemented by means core 2c also precipitation part number 1 number 2 and a precipitation portion (D1) (D2, D2')for guiding a rod to a slitter silicon that does not the size of the deposition approaches a target value in the relevant portions of the precipitation portion reaction a VOP and a VOP showing outlines section form of wet liquid to flow down.

Two core means (C1, C2) is process, hardly generates wastewater, precipitation and different numbers of core group and core composed different of the cross-section of element the core even number 2 from any location space inside a reactor core means (C2) of preheating is in combination or alternation caused by a, that does not finally according to the present invention the number of pixels in width and (D1, D2) layer, or comprises a non-silicon precipitation part key input unit squeezed to the sprung blade and can be treated with water, of the reactor to be productivity.

In the embodiment 4

Won cross-section also 2d has a precipitation filtering process, hardly generates wastewater, the same total 16 set of core units are installed number 1 core means (C1) and (C2) is number 2 core means different numbers of core group and core composed outlines brake only is the illustrated plane view,

Number 1 in the exemplary core means (C1) is rod-shaped set of 4 core unit wherein number 1, number 1 core units (1A-4-1A-1) is the single-core placed into groups.

On the other hand, the rod-shaped set of 12 (C2) means core number 2 number 2 core unit occur, core unit 2A-1, 2A-2, 2A-3, 2A-4, number 2 for 2A-6 and 2A-5 to A group-core, core unit 2B-1, 2B-2, 2B-3, 2B-4, for 2B-6 and 2B-5 B group-core on the number 2, number 2 core group is divided into two is arranged.

An individual core groups the electrode portion, and the core is unit corresponding to each other and are connected in series, a, number 2 number 2 and a A group-core core group-B each other is connected in parallel to the, corresponding core means (C1, C2) (V1, V2) power supply according respectively to be electrically connected to power supply system occurs.

Draft beer from a precipitation-and number 1 for operation core means (C1) and each number 1 core unit corresponding to number 1 (E1) the electrode portion made of kinds are fed through power to electric heating means, based on electrode portion 1A-1 → 1A-1 '→ 1A-2 → 1A-2' → 1A-3 → 1A-3 '→ 1A-4 → 1A-4' in order of while current flow, is heated and the electrical (C1) means core number 1, number 1 number 2 ranges around unit core unit core is preheating-rich.

Also 2d as illustrated, a nozzle for supplying and discharging gas the necessary space in installations of electrically heatable except that the core means (C1) by a number 1 number 2 heating means allowing efficient progress of preheating is of (C2) can be, core group and core unit is vertically, the drug can be symmetrically disposed, an object by using a histogram critical disposed the A group-core number 2 number 2 number 1 than B group-core core means (C1) is preheated with the. adverse to.

For example, number 2 core group-B contained in the core unit are the first to a electrically heatable vertical both sides of a pair of wall parts number 1 core unit to be preheating facilitate are disposed parallel to each other but, number 2 core group-A contained in the core unit are the first to one side of unit core number 1 a electrically heatable vertical portions, and preheats applicable even to be such that the covers may be placed perpendicular to each other the A group-core number 2 number 2 is preheating later B group-core.

Number 2 core group-B is preferably in a temperature range from 350-1,000 °C is preheated high electric furnace dust of low potential difference which can be heated also, number 2 core group-B → 2B-1 2B-1 each begins then electric heating to '→ 2B-2 → 2B-2' → 2B-3 → 2B-3 '→ 2B-4 → 2B-4' → 2B-5 → 2B-5 '→ 2B-6 → 2B-6' in order of and current, number 2 A group-core core of neighborhood units as well as unit core number 1 number 2 number 2 adjacent contained in the core group-B by unit core is preheated by preheating is the controller operates the number 2 comes A group-core can begin with straightforward heating also is enabled.

Number 2 and core means (C2) group by group by starting the heating electrical sequential precipitation reactor core capable of rotating regarding each core when heated by the electrical units quantity per a, core power supply control group temperature of the core means (C1, C2) the required reaction temperature maintained within a range can be adjusted to values very.

In addition said core unit and number 1 and number 2 number 2 each having a different number of unit core group core even arranged environment preheated to, number 2 core means (C2) electrical heating of different can be begins as soon as the, two core means (C1, C2) and corresponding core groups are the required reaction in a temperature range from, each holding to power supply formed by controlling an by supplying a reaction gas (Gf), of a desired magnitude (D1, D2) layer, or comprises a non-silicon precipitation part key input unit squeezed to the sprung blade and can be treated with water, of the reactor to be productivity.

In the embodiment 5

Also 2e has a precipitation filtering process, hardly generates wastewater, total 12 set of core units are installed number 1 core means (C1) and (C2) means core number 2 different numbers of each other which are configured in the form and section unit core is roughly when, exemplified by is a plane view,

In the exemplary of concentric rectangular section (C1) is in the form of conduit or tube has number 1 core means consists unit core number 1 set of 4, number 1 core units (1A-4-1A-1) is the single-core placed into groups.

While, ribbons of rectangular cross the 8 (C2) means core number 2 of which is formed to have a core unit wherein set of number 2, number 2 core units (2A-8-2A-1) single-core also is placed into groups.

Core means core unit (C1, C2) according the electrode portion corresponding to each other are connected in series, a (V1, V2) respectively the corresponding power supply electrically connected to the conductive medium independent power supply system occurs.

Draft beer from a precipitation-and number 1 for operation core means (C1) and each number 1 core unit corresponding to number 1 (E1) the electrode portion made of kinds are fed through power to electric heating means, based on electrode portion 1A-1 → 1A-1 '→ 1A-2 → 1A-2' → 1A-3 → 1A-3 '→ 1A-4 → 1A-4' in order of while current flow, is heated and the electrical (C1) means core number 1, number 1 number 2 ranges around unit core unit core is preheating-rich.

As exemplary e.g. 2e also, a nozzle for supplying and discharging gas the necessary space in installations of electrically heatable except that the core means a number 1 number 2 heating means (C2) (C1) by capillary phenomenon without using a pump, stage the cause of a low preheating if so, , core group and core unit is vertically, which are symmetrically disposed with, for example the number 1 number 2 core unit 2A-1 1A-1 unit core and a pair of wall parts neighboring 1A-4, the number 1 number 2 core unit 2A-2 1A-1 unit core is preheated mainly by constitution: that is movably arranged with.

Number 2 core means (C2) is preferably in a temperature range from 350-1,000 °C is preheated high electric furnace dust of low potential difference which can be heated also, electrical heating of (C2) number 2 core means begins then core unit 2A-1 order until 2A-8 from and current, the power supply control quantity per a core means core temperature of (C1, C2) the required reaction temperature maintained within a range can be adjusted to values very.

Followed by a silicon precipitation according in operation two core means (C1, C2) (D1, D2) part from precipitate a kind of electric charge like the silicon bar thickness of different size formed, respectively, also 2e a silicon rod size of the deposition approaches a target value reaction terminated the time that show section form portion precipitation of wet liquid to flow down.

Number 1 and number 2 core unit the number of core units and having different cross sectional shapes even number 2 from any location space inside a reactor core means (C2) of preheating is effect to the receiving unit of the sheet also straightforward electrical heating of (C2) means core number 2 can be started and, two core means (C1, C2) is the required reaction in a temperature range from formed by controlling an, each holding power by supplying a reaction gas (Gf), of a desired magnitude (D1, D2) layer, or comprises a non-silicon precipitation part key input unit squeezed to the sprung blade and can be treated with water, reactor productivity to be.

In the embodiment 6

Also door has 2f exemplary 2d diameter more than the won cross-section process, hardly generates wastewater, of non-magnetic material the same total 36 set of core units are installed number 1 core means (C1) and (C2) is number 2 core means different numbers of core group and core is composed a moment when a planar reactor shown in the outlines corresponding to quadrant 1 features an exemplary,

In a reactor in, number 1 core means (C1) total 16 set of rod-shaped number 1 core unit occur, core unit 1A-1 1A-8 unit core from number 1 until the ultra grating layer to A group-core, core unit 1B-1 1B-8 unit core from number 1 until the ultra grating layer on the B group-core, two number 1 are arranged is divided into group core.

The 2f also among others A group-core number 1 a portion corresponding to a quadrant 1 is formed inside the tie. shown only.

On the other hand, the rod-shaped set of 20 (C2) means core number 2 number 2 core unit occur, core unit 2A-1 until 2A-4 from number 2 whether to A1 group-core, core unit 2A-5 until 2A-8 from number 2 whether to A2 group-core, core unit 2B-1 2B-6 from B1 to until whether group-core number 2, number 2 whether until 2B-12 from 2B-7 unit core and core group-B2 on the, four of number 2 are arranged is divided into group core.

Also 2f the number 2 and number 2 core group-A1 1 B1 group-core among only a portion corresponding to a quadrant is formed inside the tie. shown.

An individual core groups core unit the electrode portion corresponding to each other and are connected in series, a, B and-A group-core number 1 and number 2 core group-A1, -A2, B2-B1 and-each groups are each other is connected in parallel to the, corresponding core means (C1, C2) (V1, V2) power supply according respectively to be electrically connected to power supply system occurs.

Draft beer from a precipitation-and number 1 for operation core means (C1) and each corresponding to unit core number 1 (E1) the electrode portion made of electric heating means are fed through power to number 1, number 1 based on electrode portion from 1A-1 A group-core 1A-8 in order of in, from number 1 in B group-core 1B-1 1B-8 in order of while current flow, is heated and the electrical (C1) means core number 1, number 1 number 2 ranges around unit core unit core is preheating-rich.

Wherein, the group number 1 core means (C1) the wavelength over the behind electric heating are sequentially may be selectively initiating. may be start, but not simultaneously.

2f also as illustrated, a nozzle for supplying and discharging gas the necessary space in installations of electrically heatable except that the core means (C1) by a number 1 number 2 heating means allowing efficient progress of preheating is of (C2) can be, core group and core unit is vertically, but are symmetrically disposed with, an object by using a histogram critical disposed the A2 and-A1 group-core number 2 number 2 number 1 than B2 and-B1 group-core core means (C1) is preheated with the. adverse to.

For example, number 2 core group-B1 B2 and -2B-3 or 2B-2 contained in the core unit are the first to number 2 such as a electrically heatable closely deviation of experimental units and core number 1 being disposed in parallel to but, number 2 core group-A1 and-A2 contained in the core unit are the first to a electrically heatable being arranged close unit and core number 1 number 2 even when rather than B2 and-B1 group-core preheats applicable even by is arranged such that, the A2 and-A1 group-core number 2 number 2 core group-B1 and-B2 to bed beyond preheating capability to be is connected to the semiconductor layer..

Number 2 core group-B1 and-B2 is preferably in a temperature range from 350-1,000 °C is preheated high electric furnace dust of low potential difference which can be heated also, from 2B-1 unit core 2B-6 in order of number 2, number 2 and 2B-12 from 2B-7 unit core to corresponding order of begins semiconductor is group on the LCD, A2 and-A1 group-core number 2 neighborhood units core as well as unit core number 1 number 2 core group-B1 B2 and-adjacent contained in the number 2 is preheated by unit core by number 2 comes preheating is the controller operates the core group-A1 and-A2 also can begin with straightforward heating is, from 2A-1 unit core 2A-4 in order of number 2, number 2 and core unit 2A-5 2A-8 order of from to corresponding group on the LCD. a controller.

Number 2 core means (C2) and sequentially group by group by starting the electric heating a, precipitation reactor core capable of rotating regarding each core when heated by the electrical units quantity per a, core power supply control group temperature of the core means (C1, C2) the required reaction temperature maintained within a range can be adjusted to values very.

If, by electrical heating of (C1) means core number 1 number 2 core means (C2) in stage the cause of a low preheating, number 2 core group on the LCD if as little more that may have been ignore difference number 2 core means (C2) entire, i.e. the entire group core number 2 begins to electric heating simultaneously. a non-intrusive even.

Core unit and number 1 and number 2 number 2 each having a different number of unit core group core even arranged environment preheated to, number 2 core means (C2) electrical heating of different can be begins as soon as the, two core means (C1, C2) and corresponding core groups are the required reaction in a temperature range from formed by controlling an, each holding power by supplying a reaction gas (Gf), of a desired magnitude (D1, D2) layer, or comprises a non-silicon precipitation part key input unit squeezed to the sprung blade and can be treated with water, of the reactor to be productivity.

In the embodiment 7

Also according to the present invention (D1) also 3-Figure 7 shows a the silicon precipitation part cross-sectional drawing as of the state is formed, silicon for guiding a rod to a slitter length direction and a the horizontal and vertical cross-section of the cutting the retaining steps (a) and (b) is cross-sectional shown outlines.

, As shown to each drawing, number 1 (C1a) core element number 1 means core surface of a separation layer (C1b, C1b ', C1b")the above is formed, outwardly on the surface of means core number 1 silicon precipitation part (D1) is formed by silicon bar. they are being manufactured.

Figure 3 shows a rod-shaped in cross-section also won ([...]) having number 1 to the front surface core element separation layer of a formed silicon outwardly from the surface of means core number 1 precipitation parts of the process for guiding a rod to a slitter cross retaining steps (a) and (b) indicative of the outlines is exemplary.

Figure 4 shows a cross-section also won ([...]) in rod-shaped number 1 having surface core element separation layer of a formed silicon outwardly from the surface of means core number 1 precipitation parts of the process for guiding a rod to a slitter cross retaining steps (a) and (b) indicative of the outlines is exemplary.

Also Figure 5 shows a cross section is concentrically rectangular conduit (conduit) or tubular number 1 having surface core element separation layer of a formed silicon outwardly from the surface of means core number 1 precipitation parts of the process for guiding a rod to a slitter cross retaining steps (a) and (b) indicative of the outlines is exemplary.

Figure 6 shows a cross-section also won ([...]) in rod-shaped number 1 core element separation layer of a three surface formed outwardly from the surface of means core number 1 silicon precipitation parts of the process for guiding a rod to a slitter cross retaining steps (a) and (b) indicative of the outlines is exemplary.

Figure 7 shows a rectangular cross-section also mounted on an unload rail separation layer of a having surface core element number 1 and constituting a core means silicon outwardly from the surface of precipitation parts of the process for guiding a rod to a slitter cross retaining steps (a) and (b) indicative of the outlines is exemplary.

As shown in the (C1a) core element number 1 on the surface of a single or a plurality separating layer (C1b, C1b ', C1b")of the plural shapes are formed in the port of one of the number 1 core means as further described having two double bonds as its monomer.