FIELD EFFECT TRANSISTOR CAPABLE OF CONTROLLING BAND GAP

The present invention refers to various modification may have bar can apply in various forms, in the embodiment herein detailed drawing and example are specific to broadcast receiver. However, the present invention is defined with respect to a particular disclosure form be but is, all changing range of idea and techniques of the present invention, including the water to replacement should understood to evenly. Each drawing are described as well as a component while similar references in a similar.

Not defined differently, scientific or technical terms so that all terms in the present invention thus is provided to the person with skill in the art will generally have the meanings etc. by same. Dictionary used for such as generally defined on the context of respective technical terms have the meanings must be consistent semantics and having interprets, the application will not become manifest in defining, or overly formal sense interpreted not ideal.

Hereinafter, reference drawing objects, more detailed broadcast receiver of the present invention preferred embodiment.

In the embodiment

Figure 1 shows a cross-section of the present invention preferred embodiment according to field effect transistor also shown are disclosed.

The reference also 1, field effect transistor includes a substrate (100), pin channel region (120), band gap regulating layer (140) and gate (160) to consists of.

Substrate (100) can be composed of a semiconductor or insulating. Substrate (100) is composed of a semiconductor when, said substrate (100) having the silicon preferably.

In addition, pin channel region (120) to opposite sides of the heavily doped source and drain regions can be formed. Semiconductor substrate comprised of (100) when, for example ion implantation process the doped source and drain regions can be formed.

If, substrate (100) is made of an insulator when, said substrate (100) is installed on semiconductor layer preferably further coated with. For example, SOI (Silicon On Insulator) in the form of substrate (100) using epitaxial process on a semiconductor layer such as polycrystalline silicon constituting third can be. In addition, the pin channel region formed separate semiconductor layer (120) heavily doped source and drain regions are formed on both sides about can be. Said substrate (100) if alternatively the semiconductor material can be, for example Si or Ge of monoatomic-based semiconductors, such as GaN or GaAs semiconductor underlayer 2 such as compound semiconductor can be used.

Substrate (100) on the pin channel region (120) is combined with each other. Said pin channel region (120) substrate (100) that engages an approximately vertical from the surface of shape combined with each other. Said pin channel region (120) has a semiconductor material. If, substrate (100) provided with semiconductor material, said pin channel region (120) preferably is made from a same material as the substrate. In this case, pin channel region (120) substrate (100) for photolithography unit is tearoom waitress [su[su] pattern forming and photoresist pattern can be etched using. The, said pin channel region (120) of the Si or Ge monoatomic-based semiconductors, such as GaN or GaAs compound semiconductor material such as semiconductor underlayer 2 may have.

A channel region of semiconductor material having a pin (120) on band gap regulating layer (140) formed therein. Said band gap regulating layer (140) the fan channel region (120) work function (work function) number used for covalent linkage to a polymer material and possible, for control of properties can be composed of various materials.

For example said band gap control layer molecular scaffold molecule and rotor may have bonded structure of the following formula 1.

[Formula 1]

In the formula 1 Ar1 polycyclic aromatics into benzene, naphthalene or anthracene and, carbon atoms is 2 to 6 carbon atoms in alkene or 3 WS conjugated bond alkenes in L1. In addition, the Ar2 polycyclic aromatics into benzene, naphthalene or anthracene and, 1 to 4 carbon atoms is ED electron groups in alkoxy, halogen or - CN group are put EW is multiplexed. In addition, the integer 1 or 2 and n1, n2 is an integer 1 or 2.

In a molecular scaffold and said formula 1 (- L1 - Ar1 - ≡), (ED) (EW) n2 n1 - Ar2 - a molecular cage rotor disclosed. In addition, oxygen atoms of scaffold molecules pin engages with the silicon channel region, a molecular - C ≡ C - enabling rotational movement of the rotor and, extending the entire structure surface molecules such as returning electronic communication.

In addition, L1 in said formula 1 the pin channel region of silicon atoms may be combined with or, in the case of forming a natural oxide film on said silicon atoms combined with oxygen, oxygen can be combined with said L1 in said formula 1.

In addition, molecules are put in a rotor and has an effect on electron polarization according to electric dipole moment group is group EW ED, resonant operation can rotate according to the frequency of an applied electric field a plurality of hierarchies.

Ar1 molecule and a molecular rotor rotor aromatic compound Ar2 aromatic compound scaffold molecules along planar compounds are each aromatic group may be parallel to each other, intersecting each other or the Optocomponents defines a plane.

For example, scaffold molecules and to planar aromatic compound is an aromatic compound Ar1 Ar2 rotor planar molecule π - 0 and the intensity of conjugate bond parallel to each other, and orthogonal to each other when, the intensity of the π - conjugate bond resin coated foil substrate. Π - ground state density function when the intensity of the conjugate bond strongly at its wide, band gap which decreases, the intensity of the bandgap of silicon pin channel region that are weakened π - conjugate bond is increased ix.. , the electric field applied to generate rotational movement of the rotor can be molecules, through pin channel region of band gap can be altered.

Figure 2 shows a drawing of the present invention is a silicon quantum dot based on light absorption spectrum are also shown and, based on the emission spectrum of Figure 3 of the present invention is a silicon quantum dot are shown are disclosed.

The reference 2 also and also 3, octyl silicon quantum dot, styryl silicon quantum dot and 4 - ethynyl neel [su[su] mote reel silicon quantum dot order absorption spectrum of wavelength band which is shown, the light wavelength emission spectrum appearing therein.

This π - π π electrons by an increased length of the conjugate bond electronic water energy due the number of levels is increased, silicon quantum dot distribution of consumer interaction with secondary batteries arrogance conduct through stage generating a band gap's oldest state density in such a way.

The increase of the length of the change of the π - conjugate bond according to infer a probability density in each band gap capping layer through disapproval.

Figure 4 shows a graph illustrates the probability density of electrons also gap dizzily layer according to position in and, Figure 5 is a timing graph probability density of holes according to position in the capping layer.

The reference also 4 and 5 also, approximately spherical silicon quantum dot center exists and, silicon quantum dot having a predetermined thickness surrounding gate structures is modeled. Silicon quantum dot from the center of outer and lengths up to and the standard 10, the probability density of electrons and holes in capping layer located outside silicon quantum dot are speculatively.

Also according to said 4, 6 is the probability density of electrons in the jade [thil[thil] crossroad capping layer. 9% and, styryl configured with a probability density of electrons in the capping layer 14. 65% and, 4 - ethynyl neel [su[su] mote reel crossroad a probability density of electrons in the capping layer 20. 1% as shown by the other.

In addition, also according to said 5, configured jade [thil[thil] crossroad probability density of holes in the capping layer 9. 5%, styryl configured with a probability density of holes in the capping layer 20. 2%, 4 - ethynyl neel [su[su] mote reel crossroad 28% probability density of holes in the capping layer is presented as a substrate.

the data analysis, jade [thil[thil], styryl and 4 - ethynyl neel [su[su] mote reel π - increased length of conjugate bond order. In addition, π - high probability density have increased according to the increase of the length of conjugate bond electrons or holes. Wide distribution of user state density silicon quantum dots capable of supporting in conducting consumer which, through band gap decreases by a goniophotometer. The reduction of the carrier's probability density enhance band gap.

I.e., silicon atoms binding to π - specific binding agents or intensity according to length change of the conjugate bond band gap change can be identify.

Figure 6 shows a general outline of the present invention preferred embodiment according to band gap control layer to explain the behavior also are disclosed.

6 also reference the, band gap control layer specific substrate combined with each other. The silicon channel region having said specific mounting in Figure 1 disclosure be a pin.

Band gap control layer molecules (molecular scafold) on scaffold molecules have rotor (molecule rotor). Molecular scaffold and molecules having rotor is preferably composition of said formula 1.

The scaffold molecules which will bind to the silicon atom of a channel region of said pin said in Figure 1, the electric field applied along the length of π - conjugate bond has a mobile object descriptor.

In addition, according to the electric field applied rotor and said molecules to perform a rotational motion, said molecules scaffold of the electric field applied along the length of conjugate bond π - change in a substrate.

For example, molecules with said rotor is - CN - 2, 3 - 6, 7 - die the maul [thok[thok] tentative plan sprout it countedcar step knit reel die emits - OMe (6, 7 a-dimethoxyanthracene-a 2, 3 a-dicarbonitrile) implementation being. - CN - OMe and negative charges due to electric dipole moment of said molecules has a positive charge of the rotor, has a specific frequency resonance features.

In addition, molecular scaffold molecule and rotor generated when compressing the externally applied electric field is because the intensity of the friction should.

If, according to the electric field applied to encode a planar plane parallel to each other and to scaffold molecules represented rotor of if, π - length of conjugate bond are maximized. I.e., molecular or atomic molecules participating conjugate bond increased rotor length. The electric field applied against each other orthogonal or by two planes, if combination is retained in the form of curved, the length of the conjugate bond π - reduced substrate.

The increased length of the conjugate bond at its π - side as aforementioned the memory in an increased gap ix. state density is reduced.

This components outside the electric field applied is changed by band gap, a gate insulating layer having the low density of the applying voltage according to can be.

1 also again reference surface, said band gap regulating layer (140) on the gate (160) is combined with each other. Gate (160) includes a gate dielectric film (161) and a gate electrode (163) has a.

Gate dielectric film (161) and conventional dielectric material or made of an insulating material, preferably silicon can be comprised of an oxide. In addition, gate electrode (163) the gate dielectric film (161) is formed on, polycrystalline silicon or metal section of the conductive material with heat can will if available.

In the present invention gate dielectric film (161) pin channel region (120) between band gap regulating layer (140) is interposed substrate. Band gap regulating layer (140) intervention due to pin channel region (120) gate electrode surface band gap (163) in applied voltage can be reduced or increased. A specific level through cross the pin channel region (120) from the group consisting of band gap constituting can be reduce, through can be caused to change in threshold voltage. In particular, channel region formed pin (120) preferably has a thickness of 10 nm hereinafter the channels in the set. In the form of adhesive layer formed on the thin film channel band gap (140) according to intervention, silicon quantum dot can be applied in the same or similar field effect. Modulating transistor through the band gap, can be implementing low voltage operation.