LIGHT EMITTING DIODE APPARATUS AND MANUFACTURING METHOD THEREOF

Hereinafter, with respect to various embodiment example of the present invention, with reference to the attached drawing described as follows. The specification the contents a, specific embodiment of the present invention range form adjacent frames but is, various modification example embodiment (modifications), uniform water (equivalents), and/or including a should is understood to substitute (alternatives). In relation to the description of drawings, similar components can be used for the same or similar references.

In addition, the specification in one component (for example: number 1 component) is functional or to other components (for example: number 2 component) communicatively connected (coupled) (operatively or communicatively) is faulty, mentioned that is connected (connected to), each components connected directly or, through other components (for example: number 3 component) can be understood to include both when indirectly connected to the should. While, some component (for example: number 1 component) to other components (for example: number 2 component) "directly connected" or folder "directly connected to" referred to that when, any configuration element and other components between other components (for example: number 3 component) can be understood to does not exist.

The terms used in the specification (disclosure), is used to account for example any embodiment, not intending to be limiting the range of other example embodiment can be. In addition, the specification may also be used but in using a single representation [...] descriptions, it is apparent that in order to providing language translators is not differently, can be interpreted as meaning to including a plurality representation. In addition, the specification generally by person with skill in the art used in terms are read in the art is a device may have the same meaning. The terms used in the specification is general among a pre-defined terms, related techniques of providing language translators can be interpreted as semantics and having same or similar meaning, the become manifest in the specification are not defined, or overly formal sense interpreted not ideal. In some cases, the terms defined in embodiment examples of even the specification specification number times interpreted to psychology.

In hereinafter, various embodiment of the present invention using examples appended drawing for specifically described as follows.

One embodiment of the present invention also for example Figure 1 shows a device according to LED (Light Emitting Diode) (1000) to account for surface are disclosed. According to also 1, LED device (1000) comprises a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3), transparent heat sink (20), phosphor (30 - 1, 30 - 2) and a plurality of light emitting diode (40 - 1, 40 - 2, 40 - 3) having a predetermined wavelength.

A plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) can be growing the semiconductor material on a top surface thereof. In particular, hexagonal lattice structure (hexagonal crystal system) sapphire substrate layer having nitride layer can be grown.

A plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) includes a plurality of subpixel corresponding to each can be. I.e., sapphire substrate layer (10 - 1) is applied to the R sub-pixel, sapphire substrate layer (10 - 2) is applied to the G sub-pixel, sapphire substrate layer (10 - 3) can be B the corresponding sub-pixel.

Only, a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) are identical to each other and configuration, can be used as optical sensing. In addition, a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) through an optical waveguide equal, phosphor (30 - 1, 30 - 2) can be divided by sub-pixel characteristics.

A plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) is formed on a respective plurality of light emitting diodes (40 - 1, 40 - 2, 40 - 3) functions as a light guide plate for guiding light generated from (light guide plate) can be. I.e., a plurality of light emitting diode (40 - 1, 40 - 2, 40 - 3) from the light produced is a plurality of light emitting diode (40 - 1, 40 - 2, 40 - 3) a plurality of sapphire substrate layer corresponding to each (10 - 1, 10 - 2, 10 - 3) is incident on the lower portion of a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) emitted into the top of, only a part of a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) each monocarboxylic acid emission therefrom.

But, [...] metallic material includes a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) each side so as to surround the can be coated. And, by the sapphire substrate layer metallic materials (10 - 1, 10 - 2, 10 - 3) each light emitted monocarboxylic acid a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) each can be internally reflecting.

On the other hand, the pluralities of or more sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) described but using, limited to are not correct. For example, LED (Light Emitting Diode) device (1000) comprises a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) a plurality of silicone layer instead of disapproval.

Transparent heat sink (20) includes a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) stacked on the top, a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) in the area between the pattern processing in the nanometer range.

Transparent heat sink (20) comprises a plurality of pixels corresponding to the matrix form can be patterned. For example, transparent heat sink (20) display of the FHD 1920 × 1080 × 3=6220800 matrix form corresponding to implement two sub-pixels can be patterned. Transparent heat sink (20) transparent but the portions thereof corresponding sub pixel, sub-pixel not correspond to the periphery of the black can be patterned.

Transparent heat sink (20) includes a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) in the area between the processed black pattern, a plurality of light emitting diode (40 - 1, 40 - 2, 40 - 3) are released from the plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) a plurality of mutually oriented so that mixing ofan can respectively pass.

Transparent heat sink (20) includes a plurality of light emitting diode (40 - 1, 40 - 2, 40 - 3) heat generated from phosphor (30 - 1, 30 - 2) can be from being transferred to a blocking. For example, transparent heat sink (20) is be a such as polycrystalline silicon. Thus, phosphor (30 - 1, 30 - 2) improves the life of process from.

In addition, transparent heat sink (20) includes the oxide layer can be extend. For the specific description will be described later.

Phosphor (30 - 1, 30 - 2) is the same is light-emitting material absorbs energy of a red, green, emit the light of such a material, Quantum Dot etc. disclosed. Phosphor (30 - 1, 30 - 2) comprises a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) to correspond to at least a portion of transparent heat sink (20) can be stacked on top of each other. For example, phosphor (30 - 1, 30 - 2) comprises a plurality of sapphire substrate layer (10 - 1, 10 - 2) transparent heat sink (20) is provided at the upper laminated it becomes, sapphire substrate layer (10 - 3) transparent heat sink (20) is provided at the upper thereof can unlaminated.

Phosphor (30 - 1, 30 - 2) when the stacked plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) characteristics are divided. For example, a plurality of light emitting diode (40 - 1, 40 - 2, 40 - 3) is equal to emit the light of blue can be, sapphire substrate layer (10 - 1) and a sapphire substrate layer (10 - 2) transparent heat sink (20) is provided at the upper phosphor (30 - 1, 30 - 2) R subpixel and G each laminate sub-pixel can be operating. The, phosphor (30 - 1, 30 - 2) not been deposited the sapphire substrate layer (10 - 3) can be operating the B sub.

The, phosphor (30 - 1, 30 - 2) comprises a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) R sub-pixel during corresponding the sapphire substrate layer (10 - 1) stacked on number 1 phosphor and a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) G sub-pixel during corresponding the sapphire substrate layer (10 - 2) can be stacked on number 2 phosphor. Only, and are not limited to, other types of phosphor with as much as disapproval.

On the other hand, as described above, a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) functions as a lower plate is a plurality of light emitting diode (40 - 1, 40 - 2, 40 - 3) collected from each emitting light since viewing angle can be narrowed. Thus, phosphor (30 - 1, 30 - 2) comprises a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) converting light incident from the corresponding subpixel wavelength, wavelength change therein is leaked and emits diffusion of material in a can. I.e., phosphor (30 - 1, 30 - 2) and second substrates due to diffusion material can be included.

Only, and are not limited to, phosphor (30 - 1, 30 - 2) through the narrowing the viewing angle is not material may be filled. For example, in the case of preventing exposure viewing angle display used in a public place is more important rather than personal information element may be, in this case diffusion material may be filled not in use.

A plurality of light emitting diode (40 - 1, 40 - 2, 40 - 3) excessive is electronic, hole pair recombination by emitting a light by big p a-n junction diode. A plurality of light emitting diode (40 - 1, 40 - 2, 40 - 3) n-type semiconductor layer is p-type semiconductor layer in a forward direction left to the electron hole recombination facilitates working fluid substrate.

A plurality of light emitting diode (40 - 1, 40 - 2, 40 - 3) comprises a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) can be formed on each. A plurality of light emitting diode (40 - 1, 40 - 2, 40 - 3) a voltage is applied to the optical emission, emitted light is a plurality of sapphire substrate layer corresponding to each (10 - 1, 10 - 2, 10 - 3) and phosphor like through emission therefrom. Hereinafter the pluralities of light emitting diode (40 - 1, 40 - 2, 40 - 3) is disclosed that emit blue light to each other. Only, and are not limited to, as much as disapproval emit the light of the different colors. Phosphor (30 - 1, 30 - 2) kind of plurality of light emitting diodes (40 - 1, 40 - 2, 40 - 3) depending on the color of the light can be emitted.

Also shown in Figure 2 shows a LED device also 1 (1000) indicating block construction details of are disclosed. Also selects 1 2 also shown in construct and subjected to omit details shown are provided which diffuse to the description.

LED device (1000) in addition to the configuration of Figure 1 black sealant (50), glass layer (60), a color filter layer (70 - 1, 70 - 2, 70 - 3), metallic materials (80) and a plurality of pads (90) can be further comprises.

Black sealant (50) includes a glass layer (60) at least partially transparent material, a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) black in the area between the patterned transparent heat sink (20) can be includes first.

In addition, black sealant (50) includes a transparent heat sink (20) signals and control of a plurality of light emitting diode (40 - 1, 40 - 2, 40 - 3) are released from the plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) a plurality of mutually oriented so that mixing ofan can respectively pass.

The above-mentioned phosphor (30 - 1, 30 - 2) is black sealant (50) can be formed between. I.e., number 1 number 2 phosphor and phosphor black sealant (50) can be formed between.

Glass layer (60) a black sealant (50) and phosphor (30 - 1, 30 - 2) can be formed on top of the. Black sealant (50) includes a transparent heat sink (20) and the glass layer (60) can be sealing.

Glass layer (60) oxygen, substance from low temperature (30 - 1, 30 - 2) can be protecting. On the other hand, glass layer (60) and are in one embodiment for example, polyimide, PET may be employed such as disapproval.

A color filter layer (70 - 1, 70 - 2) the phosphor (30 - 1, 30 - 2) at the top corresponding to at least a subset of pixels that may be stacked to disclosed. A color filter layer (70 - 1, 70 - 2) R sub-pixel the corresponding phosphor (30 - 1) red wavelengths of light thereby upper color filter layer number 1 (70 - 1) and G sub-pixel corresponding phosphor (30 - 2) a green wavelengths of light thereby upper color filter layer number 2 (70 - 2) can be comprising.

Or, color filter layer (70 - 3) can be even if not the phosphor laminate. For example, color filter layer (70 - 3) corresponding to the subpixel B sapphire substrate layer (10 - 3) can be laminated upper away from a disapproval. A color filter layer (70 - 3) can be blue wavelengths of light thereby, sapphire substrate layer (10 - 3) and color filter layer (70 - 3) unoccupied space between the be.

A color filter layer (70 - 3) may be the Narrow Band Color Filter, can be color purity without loss.

On the other hand, a plurality of light emitting diode (40 - 1, 40 - 2, 40 - 3) each sub-pixels black color when voltage is prevented from being applied to him one, a bright light that is reflected response incident from outside the black color visible as a door number flow tides.

A color filter layer (70 - 1, 70 - 2, 70 - 3) incident from outside is reflected back light and filtering a plurality of light emitting diode (40 - 1, 40 - 2, 40 - 3) when voltage is prevented from being applied to produce each color pixel black color can be. I.e., a color filter layer (70 - 1, 70 - 2, 70 - 3) where there is a color filter layer (70 - 1, 70 - 2, 70 - 3) if the color of the brighter than can be seen disclosed.

Metallic materials (80) includes a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) coated so as to surround each side plane, a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) each side plane radiation on a surface of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) each capable of internally reflecting.

I.e., metallic materials (80) which mutually oriented so that ofan mixing between a sub pixel, pixel luminance can be increased.

Metallic materials (80) aluminum, titanium and calcination can be implemented. Only, and are not limited to, materials that can reflect light if there disclosed.

A plurality of pads (90) comprises an outer power output to a plurality of light emitting diodes (40 - 1, 40 - 2, 40 - 3) can be formed on each. A plurality of pads (90) and a plurality of light emitting diode receives external power (40 - 1, 40 - 2, 40 - 3) each be capable of applying a voltage.

P-type semiconductor layer and n-type semiconductor layer are connected to respective ones of the light emitting diode pads to be capable of applying a voltage.

On the other hand, influx LED device having a structure in which (1000) substrate, mold, gold wires to a stand-alone number cost and, by metallic materials can be improving efficiency. In addition, influx LED device having a structure in which (1000) be made smaller than the bar has a curved size while prolonging the life of device can be.

In the LED device hereinafter (1000) for manufacturing method of heat-sensors other.

Hereinafter for use in a "deposition", "growth", "laminated" form a layer of semiconductor material such as sense of term meaning that reduces and, various embodiment of the present invention examples layer or thin film is formed through the organic metal vapor deposition (metal non-organic chamical vapor deposition: MOCVD) or molecular beam growth (molecular beam epitaxy: MBE) can be grown in a growth chamber (chamber) using or, even out of the PECVD, APCVD, LPCVD, UHCVD, PVD, electron beam type, can be coated in various ways such as by resistance heating.

The reference also 3, first sapphire substrate layer (10) of light emitting diode layer (40) formed on the substrate. But, chamber number number bath process in sapphire substrate layer (10) on top of the light emitting diode layer (40) can be formed. In addition, in Figure 3 p-type semiconductor layer and n-type semiconductor layer includes information stored in the memory and illustrated but, chamber number number bath process can be sequentially in two layers. Only, and the present invention and n-type semiconductor layer stacked sequence independent p-type semiconductor layer, which layer is first laminated even there disclosed.

On the other hand, sapphire substrate layer (10) on top of the GaN layer is grown on a, light emitting diode layer (40) can be formed. Wherein, light emitting diode layer (40) is able to emit blue light. Only, and are not limited to, light emitting diode layer (40) which a material which can be formed even if there disclosed.

Hereinafter also 4a to 4c also includes a sapphire substrate layer of (10) and light emitting diode layer (40) etch photoresist (Photo Resistor) for drawing to explain application method are disclosed. In the sapphire substrate layer for facilitating descriptions of Figure 3 also 4a to 4c also (10) and light emitting diode layer (40) was shown placement of the calculator.

First, such as 4a also, light emitting diode layer (40) by a photolithography register (400) coated substrate. Wherein, photoresist (400) for use [...] exposure is applied.

And, such as 4b also, photoresist (400) and corresponds to a predetermined pixel number of it became work mask (500) placed.

It became work mask corresponds to a predetermined pixel number (500) are not used as a subpixel is photoresist of the region (400) number mask for a stand-alone (500) are disclosed. I.e., mask (500) subpixel is used as photoresist of the region (400) so as to block a small number from exposure can be disclosed.

And, such as 4c also, photoresist (400) of the exposed region by exposure through the exposure machine process pixels through use photoresist portion (400) is left to be coated. I.e., photoresist (400) are not used as a sub pixel number for reparing over both sides of the lower area of the region, photoresist (400) lower region of the remaining region used as a sub pixel region are disclosed.

After the sapphire substrate layer such as number bath process also 5 also 3 (10) and light emitting diode layer (40) again placement of calculator described substrate.

As shown in fig. 5, photoresist (400) number after a partial section of a stand-alone, sapphire substrate layer (10) on the patterned transparent heat sink (20) a deposit disclosed.

Transparent heat sink (20) comprises a plurality of pixels corresponding to one another patterned in a matrix form. I.e., transparent heat sink (20) used as a sub pixel formed in the transparent, are not used as a sub-pixel formed in the black can be patterned. In addition, transparent heat sink (20) the pattern of the photoresist (400) can be is number for reparing over regions.

Figure 6 shows a pattern also corresponds to sapphire substrate layer (10) and light emitting diode layer (40) is formed by etching the transparent heat sink (20) includes gate of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) and a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) each of a plurality of light emitting diode (40 - 1, 40 - 2, 40 - 3) is formed are disclosed. Sapphire substrate layer (10) and light emitting diode layer (40) so that the exposed surface of photoresist remaining (400) number are both stationary substrate.

Wherein, transparent heat sink (20) does not using, a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) and includes a plurality of light emitting diodes (40 - 1, 40 - 2, 40 - 3) can be formed is patterned. In this case, it is required that a new substrate moving a display for use with additional lower electrode disclosed.

I.e., transparent heat sink (20) sapphire substrate layer (10) and light emitting diode layer (40) so that the exposed surface a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) and includes a plurality of light emitting diodes (40 - 1, 40 - 2, 40 - 3) connecting configuration are disclosed. Conventional technique, but each pixel being at lower electrode substrate, transparent heat sink (20) by using moving without itself can be used as a displayed as.

In addition, transparent heat sink (20) between a black patterned ofan mixing can mutually oriented so that sub-pixel. I.e., transparent heat sink (20) includes a plurality of light emitting diode (40 - 1, 40 - 2, 40 - 3) are released from the plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) through respectively a plurality of mutually oriented so that a plurality of sapphire substrate layer not mixing (10 - 1, 10 - 2, 10 - 3) in the area between the black can be patterned.

On the other hand, transparent heat sink (20) can be altering the resolution of resulting display by applying the drawing process. The respect, also 12a and 12b also described therein.

Then, a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) to correspond to at least a portion of transparent heat sink (20) upper phosphor (30 - 1, 30 - 2) being piled together disclosed. Or, black sealant (50) is evaporated on one phosphor (30 - 1, 30 - 2) at a side of the disapproval. Hereinafter the black sealant (50) first laminated phosphor (30 - 1, 30 - 2) depositing described but, one embodiment example is only disclosed.

Figure 7 shows a plurality of sapphire substrate layer also (10 - 1, 10 - 2, 10 - 3) each side plane so as to surround the metallic materials (80) surface coating are disclosed. Wherein, metallic materials (80) includes a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) each side plane radiation on a surface of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) each capable of internally reflecting.

On the other hand, metallic materials (80) includes a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) as well as each side plane, a plurality of light emitting diode (40 - 1, 40 - 2, 40 - 3) encloses a portion of each side surface coated to disapproval.

Metallic materials (80) between a sub pixel mixing ofan and mutually oriented so that, aluminum, titanium and calcination can be implemented.

In addition, metallic materials (80) sputtering through a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) can be formed on each side. Wherein, sputtering is preferably the same is relatively low vacuum line between generating plasma ionized gas such as argon plasma jet impinges on the target accelerating an atom, in the vicinity method or circuit formed with a joined substrate.

Only, and are not limited to, a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) can be any method that the even side coating the face of each independent disclosed.

Metallic materials (80) by the sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) each side surface and the light is projected through release of the billion number, each sub-pixel luminance can be improve.

And, a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) is in the area between the patterned transparent heat sink (20) includes first black sealant (50) and form.

Black sealant (50) includes a transparent heat sink (20) signals and control of a plurality of light emitting diode (40 - 1, 40 - 2, 40 - 3) are released from the plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) a plurality of mutually oriented so that mixing ofan can respectively pass.

On the other hand, in Figure 7 includes a phosphor (30 - 1, 30 - 2) before depositing metallic materials (80) and black sealant (50) disclosed that but form, limited to are not correct. For example, phosphor (30 - 1, 30 - 2) laminated first, then metallic materials (80) and black sealant (50) can be formed in the disapproval. In addition, black sealant (50) is first formed, metallic materials (80) may be formed, disapproval formed at the same time.

Figure 8 shows a plurality of sapphire substrate layer also (10 - 1, 10 - 2, 10 - 3) to correspond to at least a portion of transparent heat sink (20) upper phosphor (30 - 1, 30 - 2) stacked surface are disclosed. In addition, phosphor (30 - 1, 30 - 2) is black sealant (50) can be stacked between 2000.

Phosphor (30 - 1, 30 - 2) comprises a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) converting light incident from the corresponding subpixel wavelength, wavelength change therein is leaked and emits diffusion of material in a can. For example, phosphor (30 - 1, 30 - 2) is for emitting light of RGB can be red or green emission.

Phosphor (30 - 1, 30 - 2) emits light comprises a red phosphor emits light green phosphor and number 1 number 2 can be. A plurality of phosphor number 1 sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) R sub-pixel during corresponding the sapphire substrate layer (10 - 1) stacked on top, a plurality of sapphire substrate layer phosphor number 2 (10 - 1, 10 - 2, 10 - 3) G sub-pixel during corresponding the sapphire substrate layer (10 - 2) can be stacked on top of each other.

Or, blue phosphor emits light number 3 phosphor disapproval. In this case, a plurality of phosphor number 3 sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) B sub-pixel during corresponding the sapphire substrate layer (10 - 3) can be stacked on top of each other. In particular, number 3 phosphor a plurality of light emitting diode (40 - 1, 40 - 2, 40 - 3) is not light emitted from blue light can be used.

On the other hand, number 1 number 2 phosphor and phosphor black sealant (50) can be formed between.

Figure 9 shows a also phosphor (30 - 1, 30 - 2) corresponds to sub-pixels of the color filter layer (70 - 1, 70 - 2, 70 - 3) is laminated are disclosed. As described above, color filter layer (70 - 1, 70 - 2, 70 - 3) can be thereby corresponding wavelengths of light. In addition, color filter layer (70 - 1, 70 - 2, 70 - 3) from the outside light by the light incident and reflected light front part is black color pixel number can be a stand-alone appear to effect.

On the other hand, B sub-pixel is also 9 corresponding the sapphire substrate layer (10 - 2) color filter layer on top (70 - 3) shown but use, limited to are not correct. For example, color filter layer (70 - 3) has structure with no using also disclosed. Or, all color filter layer (70 - 1, 70 - 2, 70 - 3) not using may be filled.

On the other hand, color filter layer also 9 (70 - 1, 70 - 2, 70 - 3) black sealant (50) over part of shown that radiates heat, limited to are not correct. For example, color filter layer (70 - 1, 70 - 2, 70 - 3) a black sealant (50) formed over the entire disapproval. Or, color filter layer (70 - 1, 70 - 2, 70 - 3) the phosphor (30 - 1, 30 - 2) such as black sealant (50) formed between the disapproval. In this case, phosphor (30 - 1, 30 - 2) black sealant thickness (50) thinner thickness thereof can.

Figure 10 shows a also black sealant (50) and color filter layer (70 - 1, 70 - 2, 70 - 3) on glass layer (60) surface formed are disclosed. But, color filter layer (70 - 1, 70 - 2, 70 - 3) when not being used, glass layer (60) a black sealant (50) and phosphor (30 - 1, 30 - 2) can be formed on top of the.

And, glass layer (60) to UV (ultraviolet rays) by the black sealant (50) can be curing. Black sealant (50) includes a transparent heat sink (20) and the glass layer (60) can be sealing.

Also Figure 11 shows a plurality of light emitting diodes (40 - 1, 40 - 2, 40 - 3) receives an external static random access for a plurality of pads (90) is the exposure light are disclosed. For example, a plurality of light emitting diode (40 - 1, 40 - 2, 40 - 3) each can be lower two of pads are formed, n-type semiconductor layer and two pad is connected between the diode device further p can be connected. And two screw holes are light emitting diodes, the light emitting diode to emit therefrom.

Abnormalities such as number bath method is applied, each of the existing method LED separating, mounting and selectively exposed to light, LED array process is used as such rejections. In addition, the wetting ability of the existing method according to the resolution of the display of the number of number one number to a minimum distance is maintained assembled mounting pivotably dielectric layer.

According to one embodiment of the present invention also includes a drawing process for drawing to explain example 12a and 12b also are disclosed.

During the drawing process may process raw material compressed to be big. The drawing process may a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) and a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) each of a plurality of light emitting diode (40 - 1, 40 - 2, 40 - 3) as an etch mask after, transparent heat sink (20) can be applied.

Stretching process transparent heat sink (20) to an and, as shown in also 12b transparent heat sink (20) and economically extends therefrom. Transparent heat sink (20) pattern regions are portion includes a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) and a plurality of light emitting diode (40 - 1, 40 - 2, 40 - 3) extend due not to be coated.

In addition, transparent heat sink (20) in left and right directions or up and down through the piston length which the drawing process, a plurality of sapphire substrate layer (10 - 1, 10 - 2, 10 - 3) between first and distance between sub-pixel of a display that can be.

First, drawing process before applying LED device (1000) when using, e.g. 12a also can be a number such as resolution display drawing under high pressure liquid coolant.

And, applying drawing process of LED device (1000) when using, for example can be a number such as resolution display 12b also drawing under high pressure liquid coolant.

I.e., drawing process according to change of resolution process from application of display. In addition, applying a desired resolution of the display of the number pivotably depending how much oxide or drawing process.

The same wafer area through conventional contrast stretching process ensure high utilization can be thousands %.

Figure 13 shows a one embodiment of the present invention indicating LED device according to number of example 3 dimensional forms on the bath process also are disclosed.

In the form of LED device and number 2 or more dimensional bath method to go up. But, this is for facilitating descriptions, such as in the form of LED device at the time of 3 dimensional number number number bath chamber 13 also is 1308. bath.

I.e., sapphire substrate layer (10) and light emitting diode layer (40) is a current predetermined interval in row directions be etched in predetermined intervals.

Then, LED device of Figure 13 number bath process on a transparent heat sink (20) on top of black sealant (50) can be formed. Black sealant (50) includes a transparent heat sink (20) and corresponds to a plurality of columns and rows of economically can be formed along.

Then, phosphor (30 - 1, 30 - 2), glass layer (60), a color filter layer (70 - 1, 70 - 2, 70 - 3), metallic materials (80) and a plurality of pads (90) is formed, the light transmissive electrode power supply number bath 1308.

Figure 14 shows a one embodiment of the present invention example number of bath method according to LED device also describe flow are disclosed.

First, the lower sapphire substrate light emitting diodes formed on the substrate layer (S1410). And, sapphire substrate patterned transparent layer is heat laminated (S1420). And, pattern corresponds to sapphire substrate layer and light emitting diode layer of the transparent heat sink includes gate of sapphire substrate layer and a plurality of sapphire substrate layer each of a plurality of light emitting diodes (S1430) form. And, a plurality of sapphire substrate layer laminated on at least a portion of transparent heat sink corresponding phosphor (S1440).

Wherein, are formed by a plurality of sapphire substrate through transparent heat sink includes a plurality of light emitting diode are released from a plurality of mutually oriented so that mixing ofan, black in the area between the plurality of sapphire substrate layer can be patterned.

On the other hand, the steps of depositing phosphor (S1440) comprises a plurality of sapphire substrate layer corresponding R sub-pixel number 1 a conductive phosphor layer is the sapphire substrate, the sapphire substrate layer is a plurality of sapphire substrate layer corresponding G sub-pixel number 2 phosphor deposit disclosed.

Wherein, the patterned transparent heat sink region between a plurality of sapphire substrate region further includes forming a black sealant, number 1 number 2 phosphor and phosphor can be formed between the black sealant.

And, black UV (ultraviolet rays) and the glass layer on the glass sealant and phosphor layer additionally includes curing the sealant by the black, black sealant layer can be transparent heat sink and glass sealing.

On the other hand, incident light from a plurality of sapphire substrate corresponding phosphor converts the subpixel wavelength, wavelength change therein is leaked and emits diffusion of material in a can.

In addition, phosphor corresponding to the pixels in a color filter layer further includes the steps of depositing at least a subset of the upper can.

On the other hand, coating each side plane so as to surround the plurality of sapphire substrate layer further includes metallic materials, metallic material includes a plurality of sapphire substrate layer each side plane radiation on a surface of each internally reflecting layer capable of sapphire substrate.

In addition, the plurality of light emitting diodes each of a plurality of generator receives an external-mix can further include the step of.

And, transparent heat sink comprises a plurality of pixels corresponding to the matrix form can be patterned.

In addition, sapphire substrate layer and light emitting diode layer is etched, transparent heat sink prestretch can further include the step of applying.

At this time according to various embodiment of the present invention example, LED device be made smaller than the size of the device can be provided bar and prolonging the life of, device number of bath can be time is shortened.

On the other hand, disclosed that by etch chemical or more freely, limited to are not correct. For example, capping layer may be filled using sapphire substrate layer and light emitting diode laser.

In addition, in or more R, G, B including sub-pixels of a display number bath described but, limited to are not correct. For example, monochromatic illumination device without phosphor is used to bath number can also be disclosed.

And, R, G, B sub-pixels of this set is utilized as described but, limited to are not correct. For example, R, G, B sub-pixels individually separating using configuration also disclosed.

On the other hand, the various embodiment example according to method can be programmed are various storage media. The, various types of electronic device performing a storage medium of an intervening various embodiment example according to method can be distributors.

Specifically, the above method is performed sequentially number non-temporary readable medium storing a program number is co 1308. (non non-transitory computer readable medium).

Non-temporary readable medium stores register, cache, memory storing data medium such as short spillage during rather than semi-permanently stores data, read by big-available media device (reading). Specifically, the above-mentioned application or programs include various CD, DVD, hard disk, BLU-ray disc, USB, memory card, readable medium such as ROM non-temporary stored 1308. ball number.

In addition, in a preferred embodiment of the present invention example but more series and described, the present invention refers to the use of a specific embodiment example correspondingly defined above, in the claims claim the subject matter of invention made without deviating from the invention belongs in the art 155.520 thereby enabling as well as various modified embodiment, these modified embodiment of the present invention are technical idea must not be understood to or separately from the outlook will.