METHOD FOR FORMING ATYPICAL ETCHING INTERFACE BY UNDERWATER PLASMA INDUCTION
The present invention refers to the energy source of the handling directional irradiation-resist surface can be unique scrambling pattern structure, particle contamination in a polysilicon layer or an explosive process around cracks in water by means of induction plasma etching method to form the station interface are disclosed. To date laser such as energy source for guiding the electrical conduction layer etching process is plasma coated substrate embodiment but in air, materials and an explosive process plasma is created, the plasma vapor by cooling process is formed much, the particles are adhered to a substrate a surface number door been ([2 also] reference). In addition an enormous increase in plasma heat by etching back the peripheral pad portion may number been door ([3 also] reference). In addition, etching a scrambling pattern forming plasma for inducing interface is necessary such as intensity or energy source which operation is to be swung, in this case the aforementioned particle contamination and etching site peripheral crack in the rear door is further number to be coated. The present invention refers to a coating layer is etched to form peripheral crack door number particle contamination and etching site allows a number [...] interface and forming the pin is non-etching method. The present invention refers to the aforementioned and then the number "(a) applied on one surface turns water at the step; (b) irradiating said membrane portion for coating substrates plasma induction energy source; and (c) said diameter 1 mm or more air bubbles to output the energy source to generate a plasma with height, so that the etching non-polyvinylidene; including a water station interface formed by means of induction plasma etching method" a number [...] substrate. According to the present invention next effect flow tides. 1. Polyurethane coated with cooling effect and reduced or billion number particle generation according to etching, plasma induced by heat dissipation in water that is delivered to the substrate along the etching line peripheral crack are minimized. 2. According to etching the coating in water prepared to etching without whirling toilet bowl water out either to the peripheral line and, when water flow-repellency to the flushing away of particles is more polarization component. 3. Plasma for inducing the energy source output generated with the plasma height (diameter 1 mm or more) can be identified with the human eye size of bubble size is reached, etching plasma is separated from the non-peripheral interface temperatures are fast etching interface formed therein. 4. Non-uniform etching interface has been provided as a circumference of incident light transparent film coated on the transparent substrate capable of opaque pattern. 5. Non-uniform etching interface formed by etching back the interface is large since the bio is divided individual microorganism can be increasing the number installed in the implantation. The present invention is [also 1] ruptures the plasma induction the energy source output line height laser beams to the amorphous state can be removed photographs are disclosed. In the vapor phase etching line when the peripheral upper surface of the etching [also 2] is corrupted by the photographs particle formation state are disclosed. In the vapor phase etching [3 also] when excess heat by etching back the upper surface of the printed circuit board around line photographs States are disclosed. [4 also] is in water by means of induction plasma etching method by applying etching line cracks photographs and contamination of the perimeter of irradiation are disclosed. The present invention refers to the aforementioned and then the number "(a) applied on one surface turns water at the step; (b) irradiating said membrane portion for coating substrates plasma induction energy source; and (c) said diameter 1 mm or more air bubbles to output the energy source to generate a plasma with height, so that the etching non-polyvinylidene; including a water station interface formed by means of induction plasma etching method" a number [...] substrate. Each antenna in the present invention hereinafter detailed as follows. 1. (A) step The stage may be applied on one surface turns step water are disclosed. Underwater is used to perform the task one for coating by means of induction plasma etching, dry etching process due to the cooling water temperature as a result due to particle formation in which reduced or billion number, equal to or higher than the particle generated whirling toilet bowl water exits ([4 also] reference). Plasma etching process particle number of special effect when flowing water by means of induction of branches is further combined each other. In addition, heat dissipation in water that is delivered to the induction plasma etching substrate along the peripheral line crack are minimized ([4 also] reference). The present invention can be applied to substrates about the free number. Glass, ceramic, plastic, carbon-based, oil, inorganic hybrid-based or the like can be applied as material substrate, the thickness of the substrate, and the light transmission with respect to the number limit free. But, according to the active desktop interface with the coating film in order to form non-reflection pattern etching said transparent (light transmissivity at 50% or more) preferably applying. In addition, electrical characteristics for various utilization using electric conduction layer can be applying said coating film. Said electrically conducting coating is ceramic-based, ceramic alloy orgin, doping-based, metal-based, organic based and organic hybrid orgin can be like. In addition said electric conduction layer transparent conduction layer (TCO, Transparent Conductive Oxide) may be characterized by 0.1, specifically said transparent conducting coating is ITO (Indium Tin Oxide), FTO (F non-doped Tin Oxide), AZO (Antimony Zinc Oxide), ATO (Antimon Tin Oxide), ATO (Aluminum Tin Oxide), ZnO (Zinc oxide) either can be characterized. In addition to transparent conduction layer to said carbon nanotube, yes pin, metal nanowires, metal nano-film, conductive polymer, whether geometric live lead, nanoparticle dispersion system and the like disapproval. 2. (B) step The plasma induction energy source irradiating step said membrane portion for coating substrates are disclosed. Said plasma induction energy source structure are, ultraviolet lamp, electromagnetic, microwave, radiation, neutron, gamma-ray, IR heating, electron beam, applying either 110a can, specifically substrate material according to plasma induced the energy source of interaction and plasma induction with an energy source electrically conducting absorbent unit decides interactions of the coating film can be. A soft plasma etch process can be carried out in solution into water to perform the task value by which occurs when servicing the contamination or the crack around second magnetic and a polysilicon layer. 3. (C) step The stage may be said to generate air bubbles with diameter 1 mm or more to output the energy source plasma height, so that the etching non-polyvinylidene are disclosed. The (c) step (b) when the hydrogen is [also 4] as shown in particle contamination and free from cracks, the energy source is in the range of uniform etching pattern generated irradiation angle formed therein. However, illuminated from the energy source and improving the water output which becomes large when the size of bubble generated with the plasma along, said bubble (diameter 1 mm or more) will be identified with the human eye is reached near the interface with the high flow of bubbles which state the plasma etching, etching interface such as [1 also] on a non-JPO. Plasma generated with a cell size of types to be irradiated with the energy source, according to the temperature of different but, to be irradiated with the energy source output identified as 1 mm diameter preventing bubbles into the human eye height entered upon a [1 also] such as non-uniform etching interface formed therein. Said non-uniform etching the interface may be in an irregular following which a water form, the present invention embodiment flowing water when a water (water flow direction) is equal to directional but having irregular. This non-uniform etching interface is diffusely reflected incident to such transparent substrate can be opaque only at this site, etching interface can be large specific surface of the gussets. The present invention above through specifically for flaws on the specific in the embodiment. In the embodiment above but is defined by the present invention refers to however, the subject matter of invention without deviating from the range of [...] modified and deformable disclosed. The claims of the invention within the scope of the present invention range this true comprising modified and deformation. Not The present invention relates to a method for forming an atypical etching interface by an underwater plasma induction which can form an etching surface with a unique irregular pattern structure without an operation such as an irradiation direction of an energy source and does not generate a particle contamination or a crack around an etching region during the process. The method for forming an atypical etching interface by an underwater plasma induction comprises: a step (a) of putting a substrate with a coating film formed on one surface thereof into water; a step (b) of irradiating a coating film region of the substrate with a plasma induction energy source; and a step (c) of increasing an output of the energy source so that bubbles having a diameter of 1 mm or more are generated together with the plasma to form an atypical etching interface. COPYRIGHT KIPO 2017 (A) applied on one surface turns water at the step; (b) irradiating said membrane portion for coating substrates plasma induction energy source; and (c) said diameter 1 mm or more air bubbles to output the energy source to generate a plasma with height, so that the etching non-polyvinylidene; including a water station interface formed by means of induction plasma etching method. According to Claim 1, characterized in that said step (a) said gas stream flowing through the water for water substrate station interface formed by means of induction plasma etching method. According to Claim 1 or Claim 2, characterized in that said electrically conducting the coating film-forming method by means of induction water plasma etching station interface. According to Claim 1 or Claim 2, characterized in that said transparent water-treated with the coating film forming method by means of induction plasma etching station interface.
