METAL OXIDE STRUCTURE AND PRODUCTION METHOD OF SAME

One embodiment of the present invention forms a liquid-metal body and protrude from a surface of said body thereby (nano tip), surface to volume ratio maximizes metal oxide structure are disclosed.

Hereinafter, with reference to the drawing of the present invention specific embodiment form produced in less than 1000. The present invention refers to the number and sends an exemplary but not one.

<Metal oxide structure>

Of the present invention comprise a metal oxide structure includes a body and nano tip (nano tip).

Nano tip (nano tip) which protrude from a surface of the body of metal oxide structure extended in a direction away from the surface of the body as formed. In market direction up to a length of the major axis of the nanotip of for the vertical section is formed at the nano level, metal oxide structure can be is quickly, due to such surface [...] semiconductor and the gate can be a remarkable improvement in the time.

For example, in the embodiment according to the major axis of the vertical section of one of the present invention for implementation being 999 nm to 1 nm in market direction field length.

In addition, market direction length of 1 nm to 100 micro m field implementation being.

Nano tip of said major axis length or market direction length metal oxide structures are used properly according of a component can be.

(C) of Figure 2 1 and also as shown, one in the embodiment according to the shape of the fiber of the present invention alternatively be field.

The metal oxide structure size and surface shape such as conventional lithography conductive implementing difficult or impossible size and shape and, more powerful shock-absorbing area of such tips and mirror number prior art contrast the present invention according to effect can be disclosed.

In the embodiment according to the surface area of the field of the present invention one nano-tip formed in etching component of compositions, concentration, heat treatment time and temperature etc. can be depending, for example, body 2 of the surface area of 10 to bail be. Said condition is satisfied when the surface area of field can be suitable for achieving purpose of the invention.

For example, in the case of carry in the embodiment 2, the surface area of the liquid-metal bail be surface may include a body of about 3. This nano tips identical area (100 nm * 100 nm) metal oxide structure about 4 times the surface area of the metal oxide structure in the embodiment according to the contrast (reference 3 also) lines are big.

The present invention according to the shape and size of the body metal oxide structure and method for selecting an upper surface which may be formed into shapes and sizes there to be significantly number one isn't any time. For example in the form of a cylindrical shape, a conical-shaped, triangular-shaped, square column-like, hexagon column-like, rod-like such as a hexagonal prism shape, spherical, thin film type etc. disclosed. In addition, the number of the nano level cannot be sized to one particular size may be filled.

The present invention according to the same body and liquid-crystal structure are disclosed. The magnetic circuit with the same body and liquid-crystal structure, the physical properties of the nanotip body selected from a uniform flat when using such a polysilicon-metal body thereof can therewith may have more securely.

In the embodiment according to one of the present invention a monocrystalline body be a nanotip are integrally formed. Field body integrally formed single crystal is formed thereby, minimizing interface deficiency nanotip body element is when using carrier a rapid flow of current is supplied from a detecting...copyright 2001.

For example nickel (Ni) metal oxide of the present invention, cobalt (Co), iron (Fe), platinum (Pt), gold (Au), aluminum (Al), chromium (Cr), copper (Cu), magnesium (Mg), manganese (Mn), molybdenum (Mo), rhodium (Rh), silicon (Si), tantalum (Ta), tungsten (W), uranium (U), vanadium (V), zirconium (Zr), zinc (Zn), titanium (Ti), calcium (Ca), lithium (Li), strontium (Sr), indium (In), column other [nem (La), tin (Sn), niobium (Nb), yttrium (Y), scandium (Sc), samarium (Sm) and a gallium arsenide (Ga) group can be selected and their 2 sum of at least one oxide, zinc (Zn) and titanium (Ti) preferably one of oxide or alloys thereof can be oxides.

<Number bath method of metal oxide structures>

In the embodiment according to Figure 2 of the present invention indicating the SEM photograph number bath metal oxide structure one decoded signal are disclosed.

First, a high pressure liquid coolant number parent metal oxide substrate.

Metal oxide is the aforementioned metal oxide can be used, the present invention according to a publicly known method can be a high pressure liquid coolant back it was found parent metal oxide number is a number can be used without method. For example, chemical vapor deposition (CVD) can be is used as the alkali. (A) of Figure 2 is made of zinc oxide in the embodiment according to one of the present invention photograph disclosed.

Next, said parent metal oxide etching composition coated onto the surface of the substrate.

(B) of Figure 2 is made of one of the present invention surface etching methods of applying zinc oxide in the embodiment according to photograph are disclosed.

3 To 10 carbon atoms and carboxylic acid compound and said etching composition comprises comprise a cyclic ketone.

3 To 10 carbon atoms etching composition comprises carboxylic acid compound and comprising cyclic ketone can be used without significantly only by a number.

Carboxylic acid compounds at a high temperature which does not cause volatilization by a preform used for surface etching of parent metal oxide can be used without a number if it was found publicly known carboxylic acid compound can be. Preferably carboxylic acid polymer with compound disclosed.

Effect of the present invention 3 to 10 carbon atoms suitable for cyclic ketone is preferably cyclo pentanone (C₅ H₈ O) implementation being.

In the embodiment according to one of the present invention 3 to 10 carbon atoms carboxylic acid compound and the content of cyclic ketone adjustable degree of etching can be special number one single heating, 10 to 90% by weight of the whole etching composition independently of each other for example implementation being. When the purpose of the invention can be also said makes it desirable to achieve.

In the embodiment of the present invention as one, 3 to 10 carbon atoms carboxylic acid compound and etching composition include carboxylic acid compound and 3 to 10 carbon atoms including cyclic ketone including cyclic ketone can be a photo-resist composition. For example, the photoresist compositions having carboxyl group is carboxylic acid compound in the solution is alkali-soluble resin, ketone 3 to 10 carbon atoms used as a solvent for the photoresist composition can be used as a cyclic ketone.

If necessary, prior to the application with the same etching composition further includes a solvent dilution can be the etching composition.

the solvent dilution divided into, purpose of the invention according to nano tip for forming a 3 to 10 carbon atoms in the carboxylic acid compound and etching composition can be controlling the content of the cyclic ketone.

Etching composition for etching process for etching composition nano tip can be performed smoothly performed so that if a jacket, it was found the number can be used without a coating method is publicly known. For example, spin-coating can be performed.

The purpose of the invention is preferably, of the present invention exceeds 10000 rpm hereinafter 10 seconds to 10 minutes in the embodiment according to spin-coating is spin rate 0 rpm to one can be performed.

Etching composition applied metal oxide parent by heat treatment of a liquid-form (nano tip) body and protrude from a surface of the base.

(C) zinc oxide structure of Figure 2 of the present invention is one in the embodiment according to the part of the disclosed.

Made of metal oxide by heat treatment capable of etching while body and nano tip formed.

The heat treatment temperature at which the body and nano tips can be applied without significantly if a number, for example, 300 to 2000 °C in 10 seconds to 15 can be performed during time. Depending on the type of metal oxide can be applied depending, heat resistant metal oxide timing heat treatment temperature and time can be increased. For example titanium oxide or zinc oxide parent parent in a subsequent thermal processing can be performed during time in 300 to 1000 °C 10 seconds to 15 when the heat treatment, preferably 750 to 850 °C can be performed in 1 to 30 minutes.

Figure 4 shows a zinc oxide (ZnO) optionally at least one surface made of thermal etching is etched in a mimetic indicating mechanism are disclosed.

In etching composition temperature heat treatment and zinc oxide (ZnO) is included in the cyclic ketone molecules carboxylic acid compounds made of surface oxygen density from public (vacancy; vacancy) weak portion O, Zn reaction of each of the can.

Ketone (ketone) acidity greater than normal alkanes (alkane) artificial pearl substrate. Cyclic ketone (cyclic ketone) aldol (aldol) which is involved it is yellow the [thu result of positive effect (enolate) ions formed by reaction de determined substrate. Α - (nucleophilic reaction) nine nuclear reactions of hydrogen relative to the clip and to acidic is ketone, keto - enol mutual transitions (keto-a enol tautomer) is oxygen ions to form OH number as well as a stand-alone oxygen leaving public determined substrate.

Etching composition to reduce the volume of such etching molecules by pivotably. In the case of cyclic ketones, α - position has a large reactive hydrogen atoms with oxygen in the reaction for forming string (bond) can be involved. When carboxylic acid, carbonyl (carbonyl) groups is hydroxide carboxyl leaving substrate. Two coupling group carbon atoms bonding straps include free disclosed. Further, the second straps include oxygen atoms in hydroxyl radicals resulting in useful for bonding engagement. Zn atom is free straps include can be acetate (acetate) can be react to form ions.

If necessary, the heat treatment can be carried out together with the gas injection.

Gas is a gas used in heat treatment used without significantly number but publicly known it was found, for example nitrogen, hydrogen, argon, oxygen and air may be at least one selected from the group consisting, can be preferably is nitrogen.

<Semiconductor, electronic devices and including same Field Light-emitting device>

The present invention refers to the aforementioned metal oxide structure including semiconductor number [...] substrate.

By the aforementioned metal oxide, semiconductor performance is dramatically rejections.

In addition, the present invention refers to the aforementioned number [...] electronic device including a semiconductor substrate.

Electronic component includes a semiconductor may also be included if the display electronics stores a number but a publicly known mops and applied without, for example LED, solar cell, optical sensor, gas sensor etc. disclosed.

In one of the gas sensor when applied to large surface area due to gas leakage sensing sensitivity pattern are contrast can be significantly improved.

In addition, the present invention refers to the aforementioned metal oxide structure including an electroluminescent element number [...] substrate.

By the aforementioned metal oxide, EL has a sharp nano tip blocking the aperture and can be reduce release of is turn a-off threshold.

Hereinafter, a preferred embodiment of the present invention at one number to aid in understanding, the present invention is exemplified ephemeral number appended claim these in the embodiment is a relayed but is, in the embodiment of the present invention feature category and to perform various changes and modifications within the range in which it is apparent that vertical to one skilled in the, of relay and modifying these modified of course also belonging to claim are disclosed.

In the embodiment

In the embodiment 1

Zinc oxide (ZnO) in the form of posts 15 μm and 500 nm diameter in hexagonal PR thinner under AA (AZ 1500 Thinner, AZ Electronic Maaterials): alkali-soluble resin containing material and pen hit rice field Positive photoresist composition (PR S provided 1813G, DOW Electronic Materials)=3:1 dilution to 1 minutes after spin coating an etching composition at the rotational speed of 4000 rpm, 30 minutes in a nitrogen ambient under 800 °C in temperature by heat surface etched zinc oxide structure number was high pressure liquid coolant.

Zinc oxide prepared by the number of the structure is saved in the SEM of Figure 1 a) and h) is shown.

In the embodiment 2 To 4

In the embodiment 2 to 4 number bath used in the photoresist composition of each photoresist pattern is removed in the embodiment 1 (PR S provided 1813G, DOW Electronic Materials) 2 times, 3 times, in the range of 0.1 to 4 shift operation PR thinner dilution and number [...] (hanger, number irradiation), high pressure liquid coolant to a number in the embodiment 2 in the embodiment 1 to 4 was the same method.

In the embodiment 2 to 4 is saved in the SEM of Figure 1 b of each number produced therewith), c), d) have shown to.

In the embodiment 5 To 7

Each time thermal treatment steps 1 minutes, 5 minutes, 10 minutes in the embodiment 5 to 7 in the embodiment 1 and the same method number is a number in the range of 0.1 [...] performing his high pressure liquid coolant.

In the embodiment 5 prepared by the number 7 is saved in the SEM of each to of Figure 1 e), f), g) is shown.

Experiment example 1

The main body in the embodiment 1 prepared by the number of liquid-crystalline, directional, whether identifying components, zinc oxide film after etching is used in the crystal structure of surface deformation or spent determines which code for such as conducting experiments.

Zinc oxide (ZnO) of Figure 5 (a) is made of one of the present invention in the embodiment according to EDX spectrum pictures and TEM are disclosed. The process and, zinc oxide (ZnO nano rod) of hexagonal base of crystalline (001) direction can be sure that the show uniform planar stack. In addition, [...] interval 0. For example ZnO 52 nm on standard as well is properly adjusted, the EDX spectrum is Zn and O can be sure that only contain only. Zinc oxide (ZnO) single crystal base is by electronic points of the diffraction point and right at or.

(B) zinc oxide (ZnO) structure of Figure 5 is a longitudinal direction of the transmission electron microscope photograph are disclosed.

Through body and nano tip cross-section were visible. Zinc oxide (ZnO) structure formed on the surface of a liquid-metal upper end (FFT) of hexagonal ZnO is saved in the axial direction of C - in addition and Fast Fourer Transform HRTEM of parent and the same grid interval (ZnO) and zinc oxide and show, ZnO single crystal original characteristics were verify. In addition, Zn and O through confirms the presence of the EDX spectrum were. The main body is liquid-crystalline, directional, components were confirmed.

In addition, indicating light luminescence (photo-a luminescence) Figure 6 said in the embodiment 1 are disclosed. Fuel having a light luminescence measurement result to OLEDs energy change for each relevant peaks match known zinc oxide can be boosted.

The result of said, body and nano-tip is formed but it grows, was generated using the etching can be predetermined position characterized in that it has, in addition, the number of the present invention method it became work where the zinc oxide structure even after deformation or crystal structure of zinc oxide etch reaction materials are not at or surface contamination.

Experiment example 2

In the embodiment 1 prepared by the number of zinc oxide structure (gas sensor 1) and surface etch not zinc oxide structure (gas sensor 2) (represented in Figure 7 ZnO or hygrometer included) each including a gas sensor 1 and 2 a small number-gate.

It became work gas sensor 1 and 2 number using CH₄ , NH₃ , For sensing when the performing CO gas, each gas generating sensing each resistance value by measuring the change of Figure 8 a), b), c) is shown. In addition, of Figure 8 d) according to the density variation of each gas measured resistance value is shown.

In the embodiment according to the experiment corresponded approximately 3 to 4 times than zinc oxide structure (gas sensor 1) 2 X-sensitive gas sensor sensitivity purges.