Radio frequency switches with controllable resonant frequency

27-04-2021 дата публикации
Номер:
US0010992334B2
Контакты:
Номер заявки: 94-56-1681
Дата заявки: 11-03-2020







Цитирование НПИ

455/77
Hettak et al., “High-power broadband GaN HEMT SPST/SPDT switches based on resonance inductors and shunt-stacked transistors” IEEE 2012, in 4 pages.
Yu et al., “A DC-50 GHz SPDT switch with maximum insertion loss of 1.9 dB in a commercial 0.13-μm SOI technology” IEEE 2015, in 2 pages.
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