Radio frequency switches with controllable resonant frequency
27-04-2021 дата публикации
Номер:
US0010992334B2
Автор: Amr Reda Saad Ezz, Yousri Abozaid Mohamed Ahmed, EZZ AMR REDA SAAD, AHMED YOUSRI ABOZAID MOHAMED, Ezz, Amr Reda Saad, Ahmed, Yousri Abozaid Mohamed
Контакты:
Номер заявки: 94-56-1681
Дата заявки: 11-03-2020









CPC - классификация
HH0H01H01QH01Q3H01Q3/H01Q3/3H01Q3/30H03H03FH03F1H03F1/H03F1/5H03F1/56H03F1/565H03F2H03F22H03F220H03F2200H03F2200/H03F2200/2H03F2200/29H03F2200/294H03F2200/4H03F2200/45H03F2200/451H03F3H03F3/H03F3/1H03F3/19H03F3/195H03F3/2H03F3/20H03F3/24H03F3/245H03F3/6H03F3/68H03F3/7H03F3/72H03KH03K1H03K17H03K17/H03K17/6H03K17/68H03K17/687H03K17/6871H03K17/69H03K17/693H04H04BH04B1H04B1/H04B1/4H04B1/44H04B1/48IPC - классификация
HH0H01H01QH01Q3H01Q3/H01Q3/3H01Q3/30H03H03FH03F3H03F3/H03F3/2H03F3/20H03KH03K1H03K17H03K17/H03K17/6H03K17/68H03K17/687H04H04BH04B1H04B1/H04B1/4H04B1/44Цитирование НПИ
455/77Hettak et al., “High-power broadband GaN HEMT SPST/SPDT switches based on resonance inductors and shunt-stacked transistors” IEEE 2012, in 4 pages.
Yu et al., “A DC-50 GHz SPDT switch with maximum insertion loss of 1.9 dB in a commercial 0.13-μm SOI technology” IEEE 2015, in 2 pages.