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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 6042. Отображено 100.
12-01-2012 дата публикации

Amplifier with wide gain range

Номер: US20120007673A1
Автор: Ying-Chung Chiu
Принадлежит: NOVATEK MICROELECTRONICS CORP

An amplifier with wide gain range includes a signal converting unit, a channel unit, and multiple amplifiers. The signal converting unit receives a gain modulation signal and accordingly outputs multiple modulation signals and multiple selection signals. Based on a level of the gain modulation signal, one of the selection signals is set at a first logic state and the other selection signals are at a second logic state. The channel unit has multiple channels, respectively controlled by the selection signals, so as to conduct the channel with at the first logic state. The amplifiers are connected in series. Output terminals of the amplifiers are also respectively output to the channels of the channel unit. The amplifiers are also controlled by the modulation signals of the signal converting unit.

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21-06-2012 дата публикации

Push-pull low noise amplifier with variable gain, push-pull low noise amplifier with common gate bias circuit and amplifier with auxiliary matching

Номер: US20120154045A1
Автор: Ming-Da Tsai, Yu-Hsin Lin
Принадлежит: MediaTek Inc

A push-pull low noise amplifier (LNA) includes at least one amplifier block. Each amplifier block includes a bypass stage and at least one gain cell. The bypass stage has a first node and a second node. The gain cell has an input terminal and an output terminal, comprising a loading stage and a driving stage. When the push-pull LNA is in a first gain mode, the loading stage is enabled and the bypassing stage is disabled; and when the push-pull LNA is in a second gain mode, the loading stage is disabled and the bypassing stage is enabled.

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30-08-2012 дата публикации

Low noise amplifier (lna) suitable for use in different transmission environments and receiver using such an lna

Номер: US20120220255A1
Автор: Ramin Khoini-Poorfard
Принадлежит: Silicon Laboratories Inc

A low-noise amplifier includes first and second transconductance paths and first and second variable capacitive dividers. The first transconductance path has a first terminal for receiving a first input signal, a control terminal, and a second terminal for providing a first output signal. The second transconductance path has a first terminal for receiving a second input signal, a control terminal, and a second terminal for providing a second output signal. The first variable capacitive divider has a first terminal for receiving the first input signal, a second terminal coupled to a reference voltage terminal, and an intermediate terminal coupled to the control terminal of the second transconductance path. The second variable capacitive divider has a first terminal for receiving the second input signal, a second terminal coupled to the reference voltage terminal, and an intermediate terminal coupled to the control terminal of the first transconductance path.

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01-11-2012 дата публикации

Low noise-linear power distributed amplifier

Номер: US20120274406A1
Автор: Kevin W. Kobayashi
Принадлежит: RF Micro Devices Inc

The present disclosure describes a distributed amplifier (DA) that includes active device cells within sections that are configured to provide an input gate termination that is conducive for relatively low noise and high linearity operation. A section adjacent to an output of the DA is configured to effectively terminate the impedance of an input transmission line of the DA. Each active device cell includes transistors coupled in a cascode configuration that thermally distributes a junction temperature among the transistors. In this manner, noise generated by a common source transistor of the cascode configuration is minimized. The transistors coupled in the cascode configuration may be fabricated using gallium nitride (GaN) technology to reduce physical size of the DA and to further reduce noise.

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24-01-2013 дата публикации

Method and System for Sharing a Single Antenna for Frequency Modulation (FM) Reception or FM Transmission and Near Field Communication (NFC)

Номер: US20130023223A1
Принадлежит: Broadcom Corp

Aspects of a method and system for sharing a single antenna for frequency modulation (FM) transmission or FM reception, and near field communication (NFC) are presented. Aspects of a system may include at least one circuit that enables, via a single antenna, simultaneous transmission of an FM signal and transmission of an NFC signal or reception of an NFC signal.

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07-02-2013 дата публикации

Amplifier and associated receiver

Номер: US20130033324A1
Автор: Chih-Fan Liao
Принадлежит: MediaTek Inc

An amplifier is arranged to receive an input signal and provide an output signal in response, and includes a main amplifier core and an auxiliary circuit. The main amplifier core includes an input node, an output node and a sum node with the input node coupled to the input signal, and is arranged to provide an interior signal to the sum node and output the output signal at the output node in response to signals provided to the sum node. The auxiliary circuit is coupled between the input node and the sum node, and is arranged to match an impedance of the input node and provide a cancelling signal to the sum node in response to the input signal. An associated receiver is also disclosed.

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28-02-2013 дата публикации

Amplifier circuit with noise suppression and related noise suppression method thereof

Номер: US20130049866A1

An amplifier circuit includes an amplifier and a noise suppression block. The amplifier is arranged for receiving an input signal at an input port and generating an output signal at an output port according to the input signal. The noise suppression block is coupled between the input port and the output port of the amplifier, and arranged for receiving the input signal and the output signal and applying noise suppression to the output signal generated from the amplifier according to the received input signal and the received output signal.

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28-03-2013 дата публикации

Transmit-Receive Front End

Номер: US20130078931A1
Принадлежит: RALINK TECHNOLOGY CORP

The present invention discloses a transmit-receive (TR) front end. The TR front end includes a low-noise amplifier (LNA); a power amplifier (PA); a transformer, coupled to the PA, for increasing a voltage swing and a power transmission of the PA; and a TR switch, coupled between the transformer and the LNA. The LNA is single ended and there is no transformer between the LNA and the TR switch.

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25-04-2013 дата публикации

Variable Impedance Device

Номер: US20130099797A1

A variable impedance device includes a passive tuner that includes at least one variable component, which is controllable to apply a variable impedance value to an input signal of the passive tuner. A low noise amplifier is configured to supply the input signal to the passive tuner by amplifying an input RF (radio frequency) signal.

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09-05-2013 дата публикации

Amplifier supporting multi mode and amplifying method thereof

Номер: US20130114471A1
Автор: Jong Hyun Lee
Принадлежит: SAMSUNG ELECTRONICS CO LTD

An amplifier and an amplifying method are provided. The amplifier includes: an amplifying unit amplifying and transferring a transmission target signal to a TDD switch; the TDD switch transferring a signal received from the amplifying unit to a filter unit when the amplifier operates in a TDD mode, and transferring a signal received from the filter unit to a duplex mode selection switch; the duplex mode selection switch transferring a signal received from the filter unit to a receiving side; and a controller controlling the duplex mode selection switch to transfer the signal received from the filter unit to the receiving side without passing through the TDD switch when the received duplex mode selection signal is a FDD mode selection signal.

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16-05-2013 дата публикации

Dc offset cancelation circuit

Номер: US20130120048A1
Автор: Hyun Hwan Yoo, Yoo Sam Na
Принадлежит: Samsung Electro Mechanics Co Ltd

There is provided a DC offset cancellation circuit including: a capacitor circuit unit including at least one capacitor connected between an input terminal and an input of an amplifier; a MOSFET circuit unit including a plurality of MOSFETs connected in series between a first connection node connected to a predetermined one of both terminals of the capacitor circuit unit and a ground and operating in a linear region; and a switching circuit unit including a plurality of switch elements for selecting several MOSFETs previously selected from among the plurality of MOSFETs of the MOSFET circuit unit, respectively.

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23-05-2013 дата публикации

Amplifier circuit

Номер: US20130127544A1
Автор: Tadamasa Murakami
Принадлежит: Samsung Electro Mechanics Co Ltd

According to embodiments of the present invention, an over-input signal may be limited to be within a range between adjustable upper limit voltage and lower limit voltage while suppressing deterioration of a noise figure. An amplifier circuit includes an input transistor; an input transistor; a resistor element having a first terminal connected to a gate of the input transistor and a second terminal connected to a bias voltage; and a protective circuit connected to the gate of the input transistor and limiting an input to the gate of the input transistor to be within a range between an upper limit voltage and lower limit voltage adjustable based on the bias voltage.

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30-05-2013 дата публикации

Reception signal processing device

Номер: US20130136213A1
Принадлежит: Panasonic Corp

A reception signal processing devices includes a converter which converts an analog signal amplified by an amplifying section to a digital signal, switches respectively provided in post-stages of variable gain amplifiers of the amplifying section, a bypass switch section which sets to open and close a path in which outputs of the variable gain amplifiers go around the variable gain amplifiers of the post-stages and are inputted to the converter, a switch controller which controls the switches and the bypass switch section and a DC offset controller which sets a correction value of a DC offset in accordance with a gain set to the variable gain amplifier as an object to be corrected.

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06-06-2013 дата публикации

Method and Apparatus of an Input Resistance of a Passive Mixer to Broaden the Input Matching Bandwidth of a Common Source/Gate LNA

Номер: US20130143511A1
Автор: Zaw Soe
Принадлежит: Tensorcom Inc

A cascode common source and common gate LNAs operating at 60 GHz are introduced and described. The cascode common source LNA is simulated to arrive at an optimum ratio of upper device width to the lower device width. The voltage output of the cascode common source LNA is translated into a current to feed and apply energy to the mixer stage. These input current signals apply the energy associated with the current directly into the switched capacitors in the mixer to minimize the overall power dissipation of the system. The LNA is capacitively coupled to the mixer switches in the I and Q mixers and are enabled and disabled by the clocks generated by the quadrature oscillator. These signals are then amplified by a differential amplifier to generate the sum and difference frequency spectra.

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04-07-2013 дата публикации

Amplifier and Transceiver Including the Amplifier

Номер: US20130169364A1

An amplifier and a transceiver including the amplifier are provided. The amplifier includes an input terminal; a first transistor of a first conductivity and a second transistor of a second conductivity, each transistor comprising a source terminal, a gate terminal and a drain terminal respectively, the source terminal of the first transistor being coupled to the source terminal of the second transistor, and the gate terminal of the first transistor and the gate terminal of the second transistor being coupled to the input terminal; and an output terminal coupled to the drain terminal of the first transistor and the drain terminal of the second transistor.

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26-09-2013 дата публикации

Electronic device

Номер: US20130250536A1
Автор: Hirotaka Satake
Принадлежит: Hitachi Metals Ltd

An electronic device comprising a laminate comprising pluralities of insulator layers each provided with conductor patterns, and an amplifier-constituting semiconductor device mounted to a mounting electrode formed on an upper surface of the laminate, a first ground electrode being formed on an insulator layer near an upper surface of the laminate; a second ground electrode being formed on an insulator layer near a lower surface of the laminate; the first ground electrode being connected to the mounting electrode through pluralities of via-holes; conductor patterns constituting the first circuit block being disposed in a region below the amplifier-constituting semiconductor device between the first ground electrode and the second ground electrode; and at least part of a conductor pattern for a line connecting the first circuit block to the amplifier-constituting semiconductor device being disposed on an insulator layer sandwiched by the mounting electrode and the first ground electrode.

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26-09-2013 дата публикации

Low noise amplifier

Номер: US20130251080A1
Автор: Kunal Jayant Dadia

A low noise amplifier for use in a front end includes a multiple-input interference canceller configured to receive a plurality of input signals, and output a signal from which an interference component is removed. The multiple-input interference canceller includes a plurality of gain control blocks configured to receive each of the input signals, and perform gain control, and a coupling block configured to couple output signals of the gain control blocks.

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24-10-2013 дата публикации

Reconfigurable lna for increased jammer rejection

Номер: US20130281042A1
Принадлежит: Qualcomm Inc

A reconfigurable LNA for increased jammer rejection is disclosed. An exemplary embodiment includes an LNA having a tunable resonant frequency, and a detector configured to output a control signal to tune the resonant frequency of the LNA to increase jammer suppression. An exemplary method includes detecting if a jammer is present, tuning a resonant frequency of an LNA away from the jammer to increase jammer rejection if the jammer is present, and tuning the resonant frequency of the LNA to a selected operating frequency if the jammer is not present.

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07-11-2013 дата публикации

Frequency tuning for lc circuits

Номер: US20130295863A1
Автор: Hyman Shanan
Принадлежит: Analog Devices Inc

Apparatus and methods are disclosed related to tuning a resonant frequency of an LC circuit. In some implementations, the LC circuit can be embodied in a low noise amplifier (LNA) of a receiver. The receiver can include a component configured to generate an indicator of received signal strength indication (RSSI) of a radio frequency (RF) signal received by the receiver. A control block can adjust the resonant frequency of the LC circuit based at least in part on the indicator of RSSI. As another example, the receiver can include an oscillator, such as a VCO, separate from the LC circuit that can be used to tune the resonant frequency of the LC circuit. These apparatus can compensate for variation in a zero imaginary component of an impedance across the LC circuit.

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16-01-2014 дата публикации

System and Method for a Low Noise Amplifier

Номер: US20140015614A1
Принадлежит: INFINEON TECHNOLOGIES AG

In accordance with an embodiment, a low noise amplifier (LNA) includes a transistor, and a transformer having a first winding coupled between a LNA input terminal and a control node of the transistor, and a second winding magnetically coupled to the first winding coupled between a reference node of the transistor and a LNA reference terminal. An output of the LNA is coupled to an output node of the transistor.

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16-01-2014 дата публикации

Semiconductor device, manufacturing method of the same, and mobile phone

Номер: US20140018126A1
Автор: Atsushi Isobe, Kengo Asai
Принадлежит: Renesas Electronics Corp

A technique capable of maintaining the filter characteristics of a transmitting filter and a receiving filter by reducing the influences of heat from the power amplifier given to the transmitting filter and the receiving filter as small as possible in the case where the transmitting filter and the receiving filter are formed on the same semiconductor substrate together with the power amplifier in a mobile communication equipment typified by a mobile phone is provided. A high heat conductivity film HCF is provided on a passivation film PAS over the entire area of a semiconductor substrate 1 S including an area AR 1 on which an LDMOSFET is formed and an area AR 2 on which a thin-film piezoelectric bulk wave resonator BAW is formed. The heat mainly generated in the LDMOSFET is efficiently dissipated in all directions by the high heat conductivity film HCF formed on the surface of the semiconductor substrate 1 S.

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06-02-2014 дата публикации

Amplifier for a Wireless Receiver

Номер: US20140035675A1
Принадлежит: St Ericsson SA

Amplifier ( 6 ) for a wireless receiver, the amplifier comprising a voltage amplifier module having a voltage gain switchable between a first voltage gain value and a second voltage gain value higher than the first gain value, and a resistance module having a resistance switchable between a first resistance value and a second resistance value higher than the first resistance value, an output of the voltage amplifier module being connected to an input of the resistance module, the amplifier further comprising a set of switches configured to set the voltage gain value and the resistance value, the amplifier being operable in:—a nominal mode of operation in which the voltage gain value is set to the second voltage gain value, the resistance value being set to the second resistance value, and—a high linearity mode of operation in which the voltage gain value is set to the first voltage gain value to improve linearity of the amplifier, the resistance value being set to the first resistance value to have the same ratio of the voltage gain value to the resistance value as in the nominal mode of operation.

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27-03-2014 дата публикации

Efficient Linear Integrated Power Amplifier Incorporating Low And High Power Operating Modes

Номер: US20140085006A1
Принадлежит: DSP Group Israel Ltd

A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.

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01-01-2015 дата публикации

LOW-NOISE AMPLIFIER

Номер: US20150002225A1
Принадлежит:

A common source or common emitter LNA circuit for amplifying signals at an operating frequency f in a receiver circuit is disclosed. The LNA circuit comprises an input transistor arranged to, in operation, be biased to have a transconductance gat the operating frequency f, and having a first terminal, which is a gate or base terminal, operatively connected to an input terminal of the LNA circuit. The LNA circuit further comprises a shunt-feedback capacitor operatively connected between the first terminal of the input transistor and a second terminal, which is a drain or collector terminal, of the input transistor. Furthermore, the LNA circuit comprises an output capacitor operatively connected between the second terminal of the input transistor and an output terminal of the LNA circuit. The output capacitor has a capacitance value C Подробнее

07-01-2021 дата публикации

RF Power Detector With A Variable Threshold

Номер: US20210003613A1
Принадлежит:

A radio frequency (RF) power detector with a variable threshold for dynamic power detection. The RF power detector includes stacked transistors of an input stage and stacked transistors of an output stage. A DC bias voltage plus an input RF signal are applied to a control electrode on the input stage and the same DC bias voltage plus an additional DC bias voltage are applied to a control electrode on the output stage. Depending on the input power of the RF signal, a Δ current is generated in the output stage, and the output capacitor is either charged or discharged, and the output capacitor voltage is compared to a threshold to generate an output signal. The output signal may be averaged over time by two capacitors, miller capacitor and output capacitor. The output voltage of the RF power detector is an integration over time of the input RF power. 1. A radio frequency (RF) power detector , comprising:a first transistor of a first conductivity type having a first electrode coupled to an output node, a control electrode for receiving an input RF signal and a direct current (DC) bias voltage, and a second electrode;a second transistor of a second conductivity type opposite the first conductivity type having a first electrode coupled to the first electrode of the first transistor, a control electrode coupled to the first electrode of the second transistor, and a second electrode coupled to a supply voltage;a third transistor of the first conductivity type having a first electrode coupled to the output node, a control electrode for receiving the DC bias voltage and an additional DC bias voltage, and a second electrode;a fourth transistor of the second conductivity type having a first electrode coupled to the first electrode of the third transistor, a control electrode coupled to the first electrode of the fourth transistor, and a second electrode coupled to the supply voltage; anda comparator for comparing an output signal on the output node to a reference signal.2. The ...

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05-01-2017 дата публикации

Differential amplifier linearization in a radio frequency system

Номер: US20170005623A1
Принадлежит: Skyworks Solutions Inc

A linearization circuit reduces intermodulation distortion in a differential amplifier that includes a first stage and a second stage. The linearization circuit receives a first signal that includes a first frequency and a second frequency and generates a difference signal having a frequency approximately equal to the difference of the first frequency and the second frequency, generates an envelope signal based at least in part on a power level of the first signal, and adjusts a magnitude of the difference signal based on the envelope signal. When the differential amplifier receives the first signal at an input terminal, the first stage receives the adjusted signal, and the second stage does not receive the adjusted signal, intermodulation between the adjusted signal and the first signal cancels at least a portion of the intermodulation between the first frequency and the second frequency from the output of the differential amplifier.

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05-01-2017 дата публикации

PARALLEL AMPLIFIER LINEARIZATION IN A RADIO FREQUENCY SYSTEM

Номер: US20170005624A1
Принадлежит:

A linearization circuit reduces intermodulation distortion in a parallel amplifier that includes a first stage and a second stage. The linearization circuit receives a first signal that includes a first frequency and a second frequency and generates a difference signal having a frequency approximately equal to the difference of the first frequency and the second frequency, generates an envelope signal based at least in part on a power level of the first signal, and adjusts a magnitude of the difference signal based on the envelope signal. When the parallel amplifier receives the first signal at an input terminal, the first stage receives the adjusted signal, and the second stage does not receive the adjusted signal, intermodulation between the adjusted signal and the first signal cancels at least a portion of the intermodulation between the first frequency and the second frequency from the output of the parallel amplifier. 1. A method to improve amplifier linearity for a parallel amplifier , the method comprising:receiving at an input terminal of a parallel amplifier a first signal including signal components having a first frequency and signal components having a second frequency, the parallel amplifier including at least a first amplifier circuit and a second amplifier circuit configured in parallel;generating a second signal having a third frequency approximately equal to the difference between the first frequency and the second frequency;adjusting an amplitude of the second signal based at least in part on a power level of the first signal; andapplying the second signal to the first amplifier circuit and not to the second amplifier circuit to cancel at least a portion of intermodulation components in a third signal being output from the parallel amplifier.2. The method of wherein the intermodulation components include third order intermodulation products of the first and second frequencies.3. The method of wherein the first amplifier circuit includes one or more ...

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05-01-2017 дата публикации

AMPLIFIER LINEARIZATION IN A RADIO FREQUENCY SYSTEM

Номер: US20170005625A1
Принадлежит:

A linearization circuit that reduces intermodulation distortion in an amplifier output receives a first signal that includes a first frequency and a second frequency and generates a difference signal having a frequency approximately equal to the difference of the first frequency and the second frequency. The linearization circuit generates an envelope signal based at least in part on a power level of the first signal and adjusts a magnitude of the difference signal based on the envelope signal. When the amplifier receives the first signal at an input terminal and the adjusted signal at a second terminal, intermodulation between the adjusted signal and the first signal cancels at least a portion of the intermodulation products that result from the intermodulation of the first frequency and the second frequency. 1. A method to improve amplifier linearity , the method comprising:receiving at a first terminal of an amplifier a first signal including first signal components having a first frequency and second signal components having a second frequency;generating a second signal having a third frequency approximately equal to the difference of the first frequency and the second frequency;adjusting an amplitude of the second signal based at least in part on a power level of the first signal; andapplying the second signal to a second terminal of the amplifier to generate an intermodulation between the first and the second signals to cancel at least a portion of intermodulation components in a third signal being output from the amplifier.2. The method of wherein the intermodulation components include third order intermodulation products of the first and second frequencies.3. The method of wherein the amplifier includes one or more field effect transistors.4. The method of wherein the first terminal includes a gate terminal.5. The method of wherein the second terminal includes a drain terminal.6. The method of wherein the amplifier includes one or more bipolar junction ...

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05-01-2017 дата публикации

CASCADE AMPLIFIER LINEARIZATION IN A RADIO FREQUENCY SYSTEM

Номер: US20170005626A1
Принадлежит:

A linearization circuit reduces intermodulation distortion in a cascade amplifier that includes a first stage and a second stage. The linearization circuit receives a first signal that includes a first frequency and a second frequency and generates a difference signal having a frequency approximately equal to the difference of the first frequency and the second frequency, generates an envelope signal based at least in part on a power level of the first signal, and adjusts a magnitude of the difference signal based on the envelope signal. When the cascade amplifier receives the first signal at an input terminal, the first stage receives the adjusted signal, and the second stage does not receive the adjusted signal, intermodulation between the adjusted signal and the first signal cancels at least a portion of the intermodulation between the first frequency and the second frequency from the output of the cascade amplifier. 1. A method to improve amplifier linearity for a cascade amplifier , the method comprising:receiving at an input terminal of a cascade amplifier a first signal including first signal components having a first frequency and second signal components having a second frequency, the cascade amplifier including at least a first amplifier circuit and a second amplifier circuit configured in series;generating a second signal having a third frequency approximately equal to the difference between the first frequency and the second frequency;adjusting an amplitude of the second signal based at least in part on a power level of the first signal; andapplying the second signal to the first amplifier circuit and not to the second amplifier circuit to cancel at least a portion of intermodulation components in a third signal being output from the cascade amplifier.2. The method of wherein the intermodulation components include third order intermodulation products of the first and second frequencies.3. The method of wherein the first amplifier circuit includes one or ...

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05-01-2017 дата публикации

SCALEABLE RF TUNED LOW NOISE AMPLIFIER

Номер: US20170005630A1
Принадлежит: SUNRISE MICRO DEVICES, INC.

A power-efficient neutralized signal amplifier for use in ultra-low power narrowband receiver applications. A neutralized signal amplifier having: an impedance transformation element coupled to an amplifier input and having a differential output; a gain cell, having a differential input and a differential output, the differential input coupled to the differential output of the impedance transformation element and the differential output coupled to the amplifier output; and a neutralization element coupled to the gain cell differential output and cross-coupled to the differential output of the impedance transformation element, where the coupling of the neutralization element to the differential output of the impedance transformation element provides that the input impedance of the neutralized signal amplifier is substantially determined by reflected resistive parasitics of the impedance transformation element. 1. A neutralized signal amplifier having an input and an output , comprising:a transformer, having a primary winding and a differential secondary winding, the primary winding coupled to the amplifier input;a scaleable transconductance-gain cell, having a differential input and a differential output, the differential input coupled to the transformer differential secondary winding and the differential output coupled to the amplifier output;neutralization capacitors coupled to the gain cell differential output and cross-coupled to the transformer differential secondary winding; anda capacitive element coupled across the transformer differential secondary winding, where the coupling of the neutralization capacitors and the capacitive element to the differential secondary winding provides that reflected resistive parasitics of the transformer substantially determine an input impedance of the neutralized signal amplifier.2. The neutralized signal amplifier of claim 1 , where the transformer primary winding is single-ended.3. The neutralized signal amplifier of claim ...

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05-01-2017 дата публикации

NOISE-BASED GAIN ADJUSTMENT AND AMPLITUDE ESTIMATION SYSTEM

Номер: US20170005632A1
Автор: Johnson James A.
Принадлежит:

Methods and systems for amplitude estimation and gain adjustment using noise as a reference are described. An example receiver can include an antenna and a front end amplifier coupled to the antenna. The receiver can also include a detector circuit coupled to the front end amplifier. The receiver can be configured to determine a power of a received signal at the antenna based on a gain of the receiver. The gain of the receiver can be determined based on a noise figure of the front end amplifier and a noise amplitude. 119.-. (canceled)20. A non-transitory computer-readable medium having software instructions stored thereon that , when executed by a processor , cause the processor to perform operations comprising:determining a system gain of a receiver system based on a noise figure and an amplitude of a system signal from within circuitry of the receiver system in the absence of a transmitter signal received by the antenna; andestimating a power of the transmitter signal being received by the antenna based on the system gain.21. The non-transitory computer-readable medium of claim 20 , wherein the operation of determining a system gain of the receiver includes measuring a power level of the system signal at a detector connected to the circuitry in an absence of the transmitter signal being received by the receiver.24. The non-transitory computer-readable medium of claim 20 , wherein the operations further comprise:recomputing the system gain in response to a change in at least one selected from the system gain, a bandwidth of the receiver system, and frequency tuning.25. The non-transitory computer-readable medium of claim 20 , wherein the operations further comprise:adjusting the system gain in a plurality of physical channels of the receiver system using at least one corresponding programmable attenuator in a respective one of the plurality of physical channels.26. The non-transitory computer-readable medium of claim 20 , wherein the operations further comprise: ...

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07-01-2021 дата публикации

RADIO-FREQUENCY MODULE AND COMMUNICATION APPARATUS

Номер: US20210005578A1
Автор: Matsumoto Sho
Принадлежит: MURATA MANUFACTURING CO., LTD.

A radio-frequency module is capable of being connected to an external substrate and includes a mounting substrate having a main face and a main face, which are opposed to each other, multiple ground terminals with which the mounting substrate is electrically connected to the external substrate, a PA mounted on the main face, and an LNA mounted on the main face. A communication apparatus includes the radio-frequency module. 1. A radio-frequency module comprising:a mounting substrate having a first main face and a second main face, which are opposed to each other;a transmission power amplifier mounted on the first main face; anda low noise reception amplifier mounted on the second main face.2. The radio-frequency module of claim 1 , wherein the radio-frequency module is configured to be electrically connected to an external substrate.3. The radio-frequency module of claim 1 , further comprising:an antenna connection terminal;a transmission power amplifier; andan antenna switch that is connected to the antenna connection terminal and is configured to controllably switch between connection and non-connection states between the antenna connection terminal and the transmission power amplifier,wherein the antenna switch is arranged on the second main face.4. The radio-frequency module of claim 3 , further comprising:an impedance matching circuit arranged on the first main face, and connected to an output terminal of the transmission power amplifier.5. The radio-frequency module of claim 4 , further comprising:a reception switch connected to an input terminal of the low noise reception amplifier, and arranged on the second main face.6. The radio-frequency module according to claim 1 ,wherein, in a plan view of the radio-frequency module in a direction vertical to the first main face and the second main face, a footprint of the transmission power amplifier does not overlap a footprint of the low noise reception amplifier.7. The radio-frequency module according to claim 1 , ...

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07-01-2021 дата публикации

RADIO-FREQUENCY MODULE AND COMMUNICATION APPARATUS

Номер: US20210005579A1
Автор: Matsumoto Sho
Принадлежит: MURATA MANUFACTURING CO., LTD.

A radio-frequency module including a mounting substrate that has mounting faces opposed to each other; a PA that is mounted on the mounting face, that is a radio-frequency component, and that has an emitter terminal; a through electrode that is connected to the emitter terminal of the PA and that passes through the mounting faces of the mounting substrate; and a ground terminal connected to the through electrode. 1. A radio-frequency module comprising:a mounting substrate having a first face and a second face, which is opposed to the first face;a transmission power amplifier mounted on the first face, the transmission power amplifier including an emitter terminal;an electrode connected to the emitter terminal of the transmission power amplifier, wherein the electrode passes through the mounting substrate between the first face and the main face; anda ground terminal connected to the electrode.2. The radio-frequency module of claim 1 , whereinthe radio-frequency module is connected to an external substrate, andthe ground terminal is connected to the external substrate.3. The radio-frequency module of claim 1 , further comprising:first resin formed on the first main face that covers at least part of the transmission power amplifier.4. The radio-frequency module of claim 3 , further comprising:a circuit component mounted on the second face; andsecond resin formed on the second face that covers at least part of the circuit component.5. The radio-frequency module of claim 4 , whereinthe ground terminal is arranged on the second resin.6. The radio-frequency module of claim 5 , further comprising:a ground electrode layer formed of a planar wiring pattern in the mounting substrate; anda first shield electrode layer formed to cover a top face and side faces of the first resin and connected to the ground electrode layer at side faces of the mounting substrate.7. The radio-frequency module of claim 5 , further comprising:a second shield electrode layer formed on side faces of ...

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02-01-2020 дата публикации

METHOD AND SYSTEM FOR A TRACK AND HOLD AMPLIFIER WITH EXTENDED DYNAMIC RANGE

Номер: US20200005882A1
Автор: Zabroda Oleksiy
Принадлежит:

Systems and methods for a track and hold amplifier with extended dynamic range may include a track amplifier comprising a first PMOS transistor coupled to a first NMOS transistor, a second PMOS transistor coupled to a second NMOS transistor, a capacitor at gates of each NMOS and PMOS transistor, and a plurality of switches. The track and hold amplifier is operable to, during a tracking mode of the track and hold amplifier, couple a differential input signal to each NMOS and PMOS transistor via a first switch coupled to a first capacitor coupled to the gate of the first PMOS transistor and a second capacitor coupled to the gate of the first NMOS transistor, and via a second switch coupled to a third capacitor coupled to the gate of the second PMOS and a fourth capacitor coupled to the gate of the second NMOS transistor. 1. A method for communication , the method comprising: operatively coupling a differential input signal to each NMOS and PMOS transistor via a first switch coupled to a first capacitor coupled to the gate terminal of the first PMOS transistor and a second capacitor coupled to the gate terminal of the first NMOS transistor, and via a second switch coupled to a third capacitor coupled to the gate terminal of the second PMOS and a fourth capacitor coupled to the gate terminal of the second NMOS transistor;', 'operatively coupling the gate terminal of the first PMOS transistor to the gate terminal of the second PMOS transistor via a third switch;', 'operatively coupling the gate terminal of the first NMOS transistor to the gate terminal of the second NMOS transistor via a fourth switch;', 'operatively coupling a first common mode voltage to the gate terminals of the first and second PMOS transistors; and', 'operatively coupling a second common mode voltage to the gate terminals of the first and second NMOS transistors., 'during a tracking mode of the track and hold amplifier, 'in a track and hold amplifier comprising a first PMOS transistor coupled to a ...

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04-01-2018 дата публикации

LOW SUPPLY CLASS AB OUTPUT AMPLIFIER

Номер: US20180006620A1
Автор: KAUFFMAN John G.
Принадлежит:

An apparatus is provided which comprises: a differential input amplifying stage including a current source and a first node; a first matched pair of transistors coupled to the first node, wherein one of the transistors of the first matched pair is coupled to an output node of a driving stage; a second matched pair of transistors coupled to a second node to bias the second matched pair of transistors, wherein one of the transistors of the second matched pair of transistors is coupled to the output node of the driving stage, and wherein the second node is to be charged according to a first bias of the current source; and a resistive device coupled to the first and second nodes. 1. An apparatus comprising:a differential input amplifying stage including a current source and a first node;a first matched pair of transistors coupled to the first node, wherein one of the transistors of the first matched pair is coupled to an output node of a driving stage;a second matched pair of transistors coupled to a second node to bias the second matched pair of transistors, wherein one of the transistors of the second matched pair of transistors is coupled to the output node of the driving stage, and wherein the second node is to be charged according to a first bias of the current source; anda resistive device coupled to the first and second nodes.2. The apparatus of comprises a bias transistor coupled to a supply terminal and the second node claim 1 , wherein the bias transistor is biased according to a second bias different from the first bias.3. The apparatus of claim 1 , wherein another transistor of the first matched pair of transistors is coupled to the first node.4. The apparatus of comprises:a capacitor coupled to the output node of the driving stage; anda resistor coupled in series with the capacitor, the resistor also coupled to the first node.5. The apparatus of comprises a current mirror coupled to the second node claim 1 , wherein the current mirror includes:a diode ...

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07-01-2021 дата публикации

POWER MANAGEMENT IN TRANSCEIVERS

Номер: US20210006216A1
Принадлежит: Intel Corporation

Various embodiments are directed to apparatuses and methods to generate a first signal representing modulation data and a second signal representing an amplitude of the modulation data, the first signal and the second signal to depend on an output signal and vary a power supply voltage to a gain stage in proportion to the amplitude of the modulation data. 124.-. (canceled)25. An apparatus , comprising:circuitry to provide a power supply voltage for a power amplifier based on a feedback loop, the circuitry comprising:a first circuit to determine an amplitude for a modulated carrier signal to be amplified by the power amplifier and to generate a pulse-width modulated signal based on the feedback loop; anda second circuit to output an amplitude varying bias signal based on the pulse-width modulated signal, to provide a bias signal to the power amplifier to cause the provided power supply voltage to vary based on the amplitude of the modulated carrier signal.26. The apparatus of claim 25 , further comprising a digital-to-analog converter to couple with the power amplifier to provide a bias current.27. The apparatus of claim 25 , wherein the bias signal comprises an amplitude varying signal based on the amplitude of the modulated carrier signal.28. The apparatus of claim 25 , further comprising a transconductance amplifier as the power amplifier.29. The apparatus of claim 28 , wherein the amplitude varying bias signal is a bias voltage for the power amplifier.30. The apparatus of claim 29 , the power amplifier comprised in a radio frequency (RF) transceiver.31. The apparatus of claim 25 , further comprising a modulated data generator to output a first digital signal representing modulation data and a second digital signal representing an amplitude of the modulation data.32. The apparatus of claim 25 , wherein the feedback loop comprises a digital feedback signal.33. The apparatus of claim 25 , wherein the feedback loop comprises an analog feedback signal.34. A method ...

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07-01-2021 дата публикации

MULTIPLEXER AND FRONTEND MODULE COMPRISING A MULTIPLEXER

Номер: US20210006233A1
Автор: Heijna Roeland
Принадлежит:

A multiplexer circuit with good isolation characteristics and a compensated frequency characteristic at the transmission side is presented. The multiplexer circuit has a reception filter notch circuit (RFNC) active at a frequency within a passband of a reception filter (RXF) and coupled between an input port and a transmission filter (TXF). 1. A multiplexer circuit comprisingan input port, a common port, an output port and a signal line between the input port and the common port,a transmission filter between the input port and the common port,a reception filter coupled to the output port,a reception filter notch circuit coupled between the input port and the transmission filter, whereinthe reception filter has a passband andthe reception filter notch circuit is active at a frequency within the passband of the reception filter.2. The multiplexer of claim 1 , wherein the reception filter comprises a capacitive element.3. The multiplexer of claim 2 , wherein the capacitive element of the reception filter notch circuit electrically connects the signal line to ground.421. The multiplexer of claim 1 , wherein the reception filter notch circuit is provided to create a notch in the transfer function S.5. The multiplexer of claim 1 , whereinthe multiplexer is a duplexer and the transmission filter and the reception filter are filters of the duplexer, orthe multiplexer is a multiplexer of a degree higher than 2, and the multiplexer comprises an additional reception filter.6. The multiplexer of claim 1 , wherein the reception filter notch circuit improves reception cross isolation in a carrier aggregation system.7. The multiplexer of claim 1 , further comprising an impedance matching circuit between the input port and the transmission filter.8. The multiplexer of claim 1 , further comprisinga power amplifier connected to the input port and the transmission filter and/ora low noise amplifier connected to the output port.9. A frontend module claim 1 , comprising the multiplexer ...

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03-01-2019 дата публикации

METHOD FOR IMPROVING LINEARITY OF RADIO FREQUENCY POWER AMPLIFIER, COMPENSATION CIRCUIT AND COMMUNICATIONS TERMINAL

Номер: US20190007001A1
Автор: BAI Yunfang
Принадлежит:

A method for improving the linearity of a radio frequency power amplifier, a compensation circuit () for implementing the method, and a communications terminal with the compensation circuit (). In the method, a compensation circuit () is connected between a base (a) and a collector (b) of a transistor of a common emitter amplifier (), in order to neutralize the impact of a variation in capacitance between the base (a) and the collector (b) of the transistor () according to a radio frequency signal. No additional direct-current power consumption is needed, and degradation in performance of other radio frequency power amplifiers can be avoided. The corresponding compensation circuit () can be easily integrated with a main amplification circuit, without affecting other performance of the main amplification circuit, and provides high adjustability. 1. A method for improving linearity of a radio frequency power amplifier , whereina compensation circuit is connected between a base and a collector of a transistor of a common emitter amplifier, and the compensation circuit is configured to neutralize an impact of a variation in capacitance between the base and the collector of the transistor according to a radio frequency signal.2. The method for improving linearity of a radio frequency power amplifier according to claim 1 , whereinthe compensation circuit is implemented by using a non-linear capacitance variation of a diode under different bias conditions.3. A compensation circuit claim 1 , configured to implement the method for improving linearity of a radio frequency power amplifier according to claim 1 , whereinthe compensation circuit comprises an inductor, a capacitor, and a diode that have a common node, the other end of the inductor is connected to a bias voltage, and the other end of the capacitor is connected to a base of the transistor; and an anode of the diode is connected to a collector of the transistor, and a cathode thereof is connected to the common node.4 ...

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03-01-2019 дата публикации

APPARATUS AND METHODS FOR OVERLOAD PROTECTION OF LOW NOISE AMPLIFIERS

Номер: US20190007002A1
Автор: Wallis Leslie Paul
Принадлежит:

Apparatus and methods for overload protection of low noise amplifiers (LNAs) are provided herein. In certain configurations, an LNA system includes a switch having an analog control input, an LNA configured to provide amplification to a radio frequency (RF) input signal received from the switch, a detector configured to generate a detection current based on detecting a signal level of the LNA, and an error amplifier configured to amplify the detection current to generate an overload protection signal that controls the analog control input. 1. A low noise amplifier system comprising:a switch having an analog control input;a low noise amplifier configured to provide amplification to a radio frequency input signal received from the switch;a detector configured to generate a detection current based on detecting a signal level of the low noise amplifier; andan error amplifier configured to amplify the detection current to generate an overload protection signal that controls the analog control input.2. The low noise amplifier system of wherein the error amplifier is configured to amplify a difference between the detection current and a reference current.3. The low noise amplifier system of wherein the detector includes a bipolar transistor having an emitter electrically connected to a signal node of the low noise amplifier.4. The low noise amplifier system of wherein the detector further includes a capacitor configured to filter a current flowing through the bipolar transistor claim 3 , the detector configured to generate the detection current based on a voltage across the capacitor.5. The low noise amplifier system of wherein the low noise amplifier includes an amplification transistor and a cascode transistor claim 1 , the detector including an input electrically connected to a signal node between the amplification transistor and the cascode transistor.6. The low noise amplifier system of further comprising a feedback enable circuit electrically connected between an ...

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03-01-2019 дата публикации

RADIO FREQUENCY RECEIVER

Номер: US20190007003A1
Автор: Sivonen Pete
Принадлежит: NORDIC SEMICONDUCTOR ASA

A radio frequency receiver device comprises: a receiver input arranged to receive signals having one or more frequency components within a frequency spectrum; a filter having a filter output impedance; and an amplifier comprising: an amplifier input () connected to the filter output; an amplifier output ); at least one radio frequency input transistor (); and a feedback circuit including at least one feedback resistor (). The device is arranged to be selectably operable in: a first mode wherein the amplifier has first feedback resistance and transconductance values respectively such that the amplifier input impedance and the filter output impedance are substantially the same; and a second mode having second feedback resistance and transconductance values such that upon connection of a predetermined external impedance matching circuit () between the filter and the amplifier, the amplifier input impedance and the filter output impedance are substantially the same. 1. A radio frequency receiver device comprising:a receiver input arranged to receive signals having one or more frequency components within a frequency spectrum;a filter having a filter output impedance; andan amplifier comprising: an amplifier input connected to the filter output; an amplifier output; at least one radio frequency input transistor; and a feedback circuit including at least one feedback resistor, said feedback circuit being connected between the amplifier input and the amplifier output; a first mode wherein the amplifier has first feedback resistance and transconductance values respectively such that the amplifier input impedance and the filter output impedance are substantially the same; and', 'a second mode wherein the amplifier has second feedback resistance and transconductance values respectively such that upon connection of a predetermined external impedance matching circuit between the filter and the amplifier, the amplifier input impedance and the filter output impedance are ...

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03-01-2019 дата публикации

HIGH GAIN RESONANT AMPLIFIER FOR RESISTIVE OUTPUT IMPEDANCE

Номер: US20190007004A1
Принадлежит:

In some implementations, there is provided an apparatus comprising a resonant amplifier circuit including a first inductor having a first inductive input and a first inductive output; a second inductor having a second inductive input and a second inductive output; a first switch coupled to the first inductive output; and a second switch coupled to the second inductive output, wherein the first switch and the second switched are driven out of phase, wherein the first inductor is configured to be resonant with a first capacitance associated with the first switch, and wherein the second inductor is configured to be resonant with a second capacitance associated with the second switch. Related systems and articles of manufacture are also provided. 1. A resonant amplifier circuit comprising:a first inductor having a first inductive input and a first inductive output;a second inductor having a second inductive input and a second inductive output;a first switch coupled to the first inductive output; anda second switch coupled to the second inductive output, wherein the first switch and the second switched are driven out of phase, wherein the first inductor is configured to be resonant with a first capacitance associated with the first switch, and wherein the second inductor is configured to be resonant with a second capacitance associated with the second switch.2. The resonant amplifier of claim 1 , wherein a first terminal of the first switch and a first terminal of the second switch are coupled to a power source.3. The resonant amplifier of further comprising:a power source having a first output and a second output.4. The resonant amplifier of claim 3 , wherein the first output comprises a negative output of the power source claim 3 , wherein the second output comprises a positive output of the power source claim 3 , wherein the positive output is coupled in parallel to the first inductive input and the second inductive input.5. The resonant amplifier of claim 4 , wherein ...

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03-01-2019 дата публикации

COMPACT BYPASS AND DECOUPLING STRUCTURE FOR MILLIMETER-WAVE CIRCUITS

Номер: US20190007017A1
Принадлежит:

The disclosure generally relates to a compact bypass and decoupling structure that can be used in a millimeter-wave radio frequency integrated circuit (RFIC). For example, according to various aspects, an RFIC incorporating the compact bypass and decoupling structure may comprise a grounded substrate, a mid-metal ground plane, a bypass capacitor disposed between the grounded substrate and the mid-metal ground plane, and a decoupling inductor disposed over the mid-metal ground plane. The bypass capacitor may close a current loop in the RFIC and the decoupling inductor may provide damping in a supply network associated with the RFIC. Furthermore, the decoupling conductor may have a self-resonance substantially close to an operating band associated with the RFIC to increase series isolation, introduce substrate losses that facilitate the damping in the supply network, and prevent high-Q resonances. 1. A radio frequency integrated circuit , comprising:a grounded substrate;a mid-metal ground plane;a bypass capacitor disposed between the grounded substrate and the mid-metal ground plane, the bypass capacitor configured to close a current loop in the radio frequency integrated circuit; anda decoupling inductor disposed over the mid-metal ground plane, the decoupling inductor configured to provide damping in a supply network associated with the radio frequency integrated circuit.2. The radio frequency integrated circuit recited in claim 1 , further comprising:a supply pin connecting the decoupling inductor to the supply network; anda circuit pin coupling the bypass capacitor and the decoupling inductor to a signal path associated with the radio frequency integrated circuit.3. The radio frequency integrated circuit recited in claim 1 , wherein the decoupling inductor has a self-resonance substantially close to an operating band associated with the radio frequency integrated circuit to increase series isolation in the radio frequency integrated circuit claim 1 , to introduce ...

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02-01-2020 дата публикации

LOW NOISE DIFFERENTIAL AMPLIFIER

Номер: US20200007089A1

In one general aspect, an amplifier can include an input amplifier circuit configured to receive a bias current and receive, as an input, a signal pair connected differentially to the input amplifier circuit, the input amplifier circuit configured to output a differential output signal pair based on the received differential input signal pair, a feedback amplifier circuit configured to receive an average of the differential output signal pair and configured to provide a bias setting output for controlling the bias current, and an output buffer circuit configured to buffer the differential output signal pair, the buffering resulting in a buffered differential output signal pair capable of driving a resistive load. 1. A pre-amplifier comprising: a feedback amplifier circuit configured to control an output voltage swing of an output differential signal pair in relation to a bias current by providing a constant output voltage signal gain for the output differential signal pair;', 'an input amplifier circuit configured to receive the bias current and configured to receive, as an input, an input differential signal pair connected differentially to the input amplifier circuit through a blocking capacitor, the input amplifier circuit configured to output the output differential signal pair based on the input differential signal pair and the bias current, the input amplifier circuit including a transistor and resistor block controllable to switch output load resistors to the input amplifier circuit; and, 'a first stage including 'a buffer circuit configured to amplify an output signal of the output differential signal pair to generate a buffered output signal configured to drive a resistive load included in a gain module.', 'a second stage including2. The pre-amplifier of claim 1 , further comprising a DC bias module configured to set a high pass filter frequency for the amplifier.3. The pre-amplifier of claim 2 , wherein the DC bias module includes a plurality of resistors ...

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02-01-2020 дата публикации

LOW-NOISE AMPLIFIER SYSTEM

Номер: US20200007093A1
Принадлежит:

A low-noise amplifier system is disclosed. The low-noise amplifier system includes a low-noise amplifier having an input node and an output node in a receive path and a capacitance equalization network coupled to the output node. Compensation capacitance of the capacitance equalization network sums with non-linear capacitance of the low-noise amplifier such that a total capacitance at the output node varies by no more than ±5% over an output voltage range within voltage headroom limits of the low-noise amplifier for a given supply voltage of the low-noise amplifier. In at least some exemplary embodiments, the compensation capacitance of the capacitance equalization network is a function of output signal voltage at the output node. 1. A low-noise amplifier system comprising:a low-noise amplifier having an input node and an output node in a receive path; anda first capacitance equalization network coupled to the output node, wherein the first capacitance equalization network is configured to generate a compensation capacitance as a function of output signal voltage at the output node such that the compensation capacitance sums with a non-linear capacitance of the low-noise amplifier to provide a total capacitance at the output node that varies by no more than ±5% over an output voltage range within voltage headroom limits of the low-noise amplifier for a given supply voltage of the low-noise amplifier.2. The low-noise amplifier system of wherein the total capacitance at the output node varies by no more than ±1% over the output voltage range within the voltage headroom limits of the low-noise amplifier for the given supply voltage.3. The low-noise amplifier system of wherein the total capacitance at the output node varies by no more than ±0.2% over the output voltage range within the voltage headroom limits of the low-noise amplifier for the given supply voltage.4. The low-noise amplifier system of wherein the given supply voltage is in a range from 0.5 V to 1.8 V.5. ...

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03-01-2019 дата публикации

Efficient Front End Module

Номер: US20190007080A1
Принадлежит:

Example aspects of the present disclosure are directed to front end modules for use in communication systems. In one example aspect, a front end module can include a receive path. The receive path can include a low noise amplifier. The receive path can include an analog to digital converter (ADC) circuit operable to receive an analog signal from the low noise amplifier and convert the analog signal to a digital RF receive signal. The receive path can include an ADC post processing circuit operable to process the digital RF receive signal in the digital domain. The front end module can include a transmit path. The transmit path can include a digital to analog converter circuit operable to convert the digital RF transmit signal to an analog RF transmit signal. The transmit path can include a power amplifier. 1. A front end module comprising: a low noise amplifier operable to receive an RF signal from an antenna;', 'an analog to digital converter (ADC) circuit operable to receive an analog signal from the low noise amplifier and convert the analog signal to a digital RF receive signal;', 'an ADC post processing circuit operable to process the digital RF receive signal in the digital domain;', 'a digital down converter circuit operable to convert the digital RF receive signal to a digital baseband receive signal;, 'a receive path, the receive path comprising a digital up converter circuit operable to convert the digital baseband transmit signal to a digital RF transmit signal;', 'a digital to analog converter circuit operable to convert the digital RF transmit signal to an analog RF transmit signal;', 'a power amplifier configured to provide the analog RF transmit signal to the antenna., 'a transmit path, the transmit path comprising2. The front end module of claim 1 , wherein the ADC circuit is operable to convert analog RF signals across a span of about 800 MHz or greater in the 5 GHz band.3. The front end module of claim 1 , wherein the ADC circuit is a gigabit ADC ...

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03-01-2019 дата публикации

Ultra-low power receiver

Номер: US20190007088A1

An ultra-low-power receiver includes a low-noise amplifier configured to receive an input analog signal and generate an amplified signal and a mixer electrically coupled to the low-noise amplifier. The mixer is configured to convert said amplified signal into an intermediate frequency signal. A progressively reduced intermediate frequency filter is configured to process the intermediate frequency signal from the mixer in discrete time.

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20-01-2022 дата публикации

Power detector

Номер: US20220018882A1
Принадлежит: Qualcomm Inc

In certain aspects, a method is provided for measuring power using a resistive element coupled between a power amplifier and an antenna. The method includes squaring a voltage from a first terminal of the resistive element to obtain a first signal, squaring a voltage from a second terminal of the resistive element to obtain a second signal, and generating a measurement signal based on a difference between the first signal and the second signal. In some implementations, the resistive element is implemented with a power switch.

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02-01-2020 дата публикации

COMPENSATOR, ELECTRONIC CIRCUIT ASSEMBLY FOR OPERATING AN ANTENNA, AND ANTENNA DEVICE

Номер: US20200007181A1
Принадлежит:

A compensator for compensating line or coupling losses of a signal transmission path for transmitting a communication signal between an antenna and an electronic control unit, including at least one first interface for connecting to the antenna and a second interface for connecting to the electronic control unit, and which is furthermore notable in that, in addition to the communication signal, the compensator is configured to output a position signal for position determination. An electronic circuit arrangement for operating at least one antenna and an antenna device is also disclosed. 1. A compensator for compensating line or coupling losses of a signal transmission path for transmitting a communication signal between an antenna and an electronic control unit , including at least one first interface for connecting to an antenna and a second interface for connecting to an electronic control unit , wherein , in addition the communication signal , the compensator is configured to output a position signal for position determination and/or a synchronization signal for time synchronization , and wherein the compensator is configured to output the position signal and/or the synchronization signal via the second interface.2. (canceled)3. The compensator according to claim 1 , characterized in that the compensator has at least one modulation device claim 1 , which is configured to modulate the position signal and/or the synchronization signal onto a carrier for output.4. The compensator according to claim 1 , wherein the compensator has at least one modulation device which is configured to modulate the position signal and/or the synchronization signal onto a carrier to be transmitted via the second interface for output via the second interface.5. The compensator according to claim 1 , wherein the compensator is designed to modulate a clock signal with the position signal and/or to modulate the communication signal with the position signal and/or to modulate a supply ...

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20-01-2022 дата публикации

CASCODE GAIN BOOSTING AND LINEAR GAIN CONTROL USING GATE RESISTOR

Номер: US20220021347A1
Автор: GOLAT Joseph, Kovac David
Принадлежит:

Methods and apparatuses for controlling gain of a single stage cascode FET amplifier are presented. According to one aspect, a series-connected resistor and capacitor is coupled to a gate of a cascode FET transistor of the amplifier, the capacitor providing a short at frequencies of operation of the amplifier. According to another aspect, values of the resistor can be used to control gain of the amplifier. According to yet another aspect, the resistor is a variable resistor whose value can be controlled/adjusted to provide different gains of the amplifier according to a linear function of the resistor value. An input matching network coupled to an input of the amplifier can be used to compensate for different noise figure degradations from different values of the resistor. 1. An amplifier circuit , comprising:an input transistor and an output transistor arranged according to single stage cascode amplifier coupled between a supply voltage and a reference ground, the input transistor and the output transistor being field-effect transistors (FETs); anda capacitor and a resistor in series connection between a gate of the output transistor and the reference ground; the amplifier circuit is configured to operate over a frequency range of operation, and', and', 'a value of the resistor is configured to provide a gain of the amplifier circuit that is higher than a gain of the amplifier circuit for a value of the resistor equal to about zero Ohms., 'over the frequency range of operation,'}], 'wherein'}2. The amplifier circuit according to claim 1 , wherein the frequency range of operation is from about 4 GHz to about 5 GHz.3. The amplifier circuit according to claim 1 , wherein the value of the resistor is in a range from about 5 Ohms to about 20 Ohms.4. The amplifier circuit according to claim 1 , wherein the value of the resistor is in a range from about 5 Ohms to about 30 Ohms.5. The amplifier circuit according to claim 1 , wherein the gain is higher by about 2 dB.6. The ...

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20-01-2022 дата публикации

APPARATUS AND METHODS FOR OVERLOAD PROTECTION OF RADIO FREQUENCY AMPLIFIERS

Номер: US20220021351A1
Автор: Wallis Leslie Paul
Принадлежит:

Radio frequency (RF) amplifiers with overload protection are provided herein. In certain configurations, an RF amplifier system includes an RF amplifier that receives an RF signal from an input terminal. The RF amplifier includes an amplification field-effect transistor (FET) having a gate that receives the RF signal, and a degeneration circuit connected between a source of the amplifier FET and a ground voltage. The RF amplifier system further includes an electrostatic discharge protection circuit including a plurality of protection diodes electrically connected in series between the input terminal and the ground voltage, and a detector having an input connected along an electrical path through the plurality of protection diodes and an output that generates a detection signal operable to control an amount of degeneration provided by the degeneration circuit. 1. A radio frequency amplifier system comprising:an input terminal configured to receive a radio frequency signal;a radio frequency amplifier configured to amplify the radio frequency signal, the radio frequency amplifier including an amplification field-effect transistor having a gate configured to receive the radio frequency signal, and a degeneration circuit connected between a source of the amplifier field-effect transistor and a ground voltage; andan electrostatic discharge protection circuit including a first plurality of protection diodes electrically connected in series between the input terminal and the ground voltage, and a detector having an input connected along an electrical path through the first plurality of protection diodes and an output configured to generate a detection signal operable to control an amount of degeneration provided by the degeneration circuit.2. The radio frequency amplifier system of wherein the first plurality of protection diodes includes a first protection diode having an anode coupled to the ground voltage and a cathode coupled to the input of the detector claim 1 , and a ...

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20-01-2022 дата публикации

Two-Stage LNA with Mutual Coupling

Номер: US20220021354A1
Автор: Jiang Rong, Shah Khushali
Принадлежит:

Compact low noise amplifiers that have wide-band coverage while meeting necessary input matching and output matching characteristics. Embodiments include a wide-band, two-stage LNA with minimum degradation in performance compared to multiple narrow-band, single-stage LNAs. A generalized embodiment includes a first amplifier stage having a terminal coupled to a mutually coupled inductor circuit and to a second amplifier stage. The second amplifier stage includes a terminal coupled to the mutually coupled inductor circuit. The mutually coupled inductor circuit comprises electromagnetically coupled inductors L, L. Second terminals of the first and second amplifier stages are coupled to respective degeneration inductors. The electromagnetically coupled inductors L, L of the inductor circuit substantially increase the output bandwidth of the LNA with minimum degradation in performance. 1. A low noise amplifier , including:(a) a first amplifier stage having an input configured to receive a radio frequency (RF) input signal, and an output for an amplified RF signal;(b) a second amplifier stage having an input configured to receive the amplified RF signal from the first amplifier stage, and an output for a further amplified RF signal; (1) a first inductor coupled to the output of the first amplifier stage and configured to be coupled to a first supply voltage; and', '(2) a second inductor coupled to the output of the second amplifier stage and configured to be coupled to a second supply voltage;, '(c) an inductor circuit includingwherein the first inductor and the second inductor are electromagnetically coupled such that a mutual coupling factor K exists between the first inductor and the second inductor of the inductor circuit.2. The invention of claim 1 , wherein the mutual coupling factor K is equal to or greater than about −0.5 and less than or equal to about +0.5.3. The invention of claim 1 , wherein the mutual coupling factor K is equal to or greater than about −0.3 ...

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20-01-2022 дата публикации

RADIO-FREQUENCY MODULE AND COMMUNICATION DEVICE

Номер: US20220021404A1
Принадлежит: MURATA MANUFACTURING CO., LTD.

A radio-frequency module includes a mounting substrate, a first power amplifier, a second power amplifier, a circuit component (IC chip), and an external connection terminal. The mounting substrate has a first main surface and a second main surface on opposite sides of the mounting substrate. The first power amplifier is mounted on the first main surface of the mounting substrate. The second power amplifier is mounted on the first main surface of the mounting substrate. The circuit component is mounted on the second main surface of the mounting substrate. The external connection terminal is disposed on the second main surface of the mounting substrate. The external connection terminal is connected to a power supply that supplies a power supply voltage to the first power amplifier and the second power amplifier. 1. A radio-frequency module comprising:a mounting substrate having a first main surface and a second main surface on opposite sides of the mounting substrate;a first power amplifier that is mounted on the first main surface of the mounting substrate;a second power amplifier that is mounted on the first main surface of the mounting substrate;a circuit component, which is different from the first power amplifier and the second power amplifier, is mounted on the second main surface of the mounting substrate; and disposed on the second main surface of the mounting substrate,', 'connected to a power supply that supplies a power supply voltage to the first power amplifier and the second power amplifier, and', 'connected to both the first power amplifier and the second power amplifier., 'an external connection terminal that is'}2. The radio-frequency module according to claim 1 , further comprising:an antenna terminal, a switch connected to the antenna terminal, and', 'a low-noise amplifier, and, 'wherein the circuit component is an IC chip that includes'}the external connection terminal is closer to the first power amplifier and the second power amplifier than to ...

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08-01-2015 дата публикации

High-frequency signal processing apparatus and wireless communication apparatus

Номер: US20150011256A1
Принадлежит: Murata Manufacturing Co Ltd

A high-frequency signal processing apparatus and a wireless communication apparatus can achieve a decrease in power consumption. For example, when an indicated power level to a high-frequency power amplifier is equal to or greater than a second reference value, envelope tracking is performed by causing a source voltage control circuit to control a high-speed DCDC converter using a detection result of an envelope detecting circuit and causing a bias control circuit to indicate a fixed bias value. The source voltage control circuit and the bias control circuit indicate a source voltage and a bias value decreasing in proportion to a decrease in the indicated power level when the indicated power level is in a range of the second reference value to the first reference value, and indicate a fixed source voltage and a fixed bias value when the indicated power level is less than the first reference value.

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12-01-2017 дата публикации

Detection of Excessively High Interference Signal Levels During Reception of Global Navigation Satellite System Signals

Номер: US20170010360A1

A high-linear amplifier receives, from an input bandpass filter, input signals including weak process signals and strong interference signals, amplifies the input signals, and transmits the amplified signals to an output bandpass filter. The high-linear amplifier includes a transistor and a feedback circuit that stabilizes the operating current of the transistor. The operating current includes the direct-current and low-frequency output signal currents of the transistor. The feedback circuit includes an interference detector that rectifies a portion of the high-frequency output signals of the transistor and extends the linear range of the high-linear amplifier. An interference indicator unit alerts an operator to the presence of excessively high levels of interference before the high-linear amplifier enters the non-linear mode. Amplified signals rejected by the output bandpass filter are reflected back to the high-linear amplifier stage. A directional coupler prevents the reflected signals from disrupting the operation of the interference detector. 1. A high-linear amplifier stage configured to receive a first plurality of signals from a first bandpass filter , amplify the first plurality of signals to generate a second plurality of signals , transmit the second plurality of signals to a second bandpass filter , and receive a third plurality of signals reflected back from the second bandpass filter , wherein the first bandpass filter has a first low cutoff frequency and a first high cutoff frequency , the second bandpass filter has a second low cutoff frequency and a second high cutoff frequency , the second low cutoff frequency is greater than the first low cutoff frequency , and the second high cutoff frequency is less than the first high cutoff frequency , the high-linear amplifier stage comprising: a transistor output terminal; and', 'a transistor control terminal;, 'a high-linear transistor comprising an operational-amplifier inverting terminal;', 'an ...

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27-01-2022 дата публикации

ELECTRONIC DEVICE AND METHOD FOR PROCESSING HARMONIC SIGNAL

Номер: US20220029643A1
Автор: LEE Wonsang, OH Kiyoung
Принадлежит:

According to various embodiments, an electronic device in a wireless communication system may include a Power Amplifier (PA) for a first frequency band, a Low Noise Amplifier (LNA) for a second frequency band at least partially overlapping a frequency band which is twice the first frequency band, and an impedance tuner which is in a first impedance state or a second impedance state under the control of the processor. The PA and the impedance tuner may be electrically coupled. A harmonic output level of the PA in the first impedance state may be greater than a harmonic output level of the PA in the second impedance state. The processor may be configured to control the impedance tuner to be in the second impedance state when communication is performed both in the first frequency band and the second frequency band, and control the impedance tuner to be in the first impedance state when communication is performed only in the first frequency band. 1. An electronic device in a wireless communication system , comprising:a processor,a power amplifier (PA) for a first frequency band;a low noise amplifier (LNA) for a second frequency band at least partially overlapping a frequency band which is twice the first frequency band; andan impedance tuner which is in a first impedance state or a second impedance state under the control of the processor,wherein the PA and the impedance tuner are electrically coupled,wherein a harmonic output level of the PA in the first impedance state is greater than a harmonic output level of the PA in the second impedance state, and control the impedance tuner to be in the second impedance state when communication is performed both in the first frequency band and the second frequency band; and', 'control the impedance tuner to be in the first impedance state when communication is performed only in the first frequency band., 'wherein the processor is configured to2. The electronic device of claim 1 , further comprising:a first notch filter ...

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14-01-2016 дата публикации

Circuits and devices related to fast turn-on of radio-frequency amplifiers

Номер: US20160013760A1
Автор: Lui Lam, Vinu Govind
Принадлежит: Skyworks Solutions Inc

Circuits, methods and devices are disclosed, related to fast turn-on of radio-frequency (RF) amplifiers. In some embodiments, an RF amplifier circuit includes an amplification path implemented to amplify an RF signal, where the amplification path includes a switch and an amplifier. In some embodiments, each of the switch and the amplifier are configured to be ON or OFF to thereby enable or disable the amplification path, respectively. In some embodiments, the RF amplifier circuit includes a compensation circuit coupled to the amplifier, where the compensation circuit is configured to compensate for a slow transition of the amplifier between its ON and OFF states resulting from a signal applied to the switch.

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10-01-2019 дата публикации

Tunable Filter for RF Circuits

Номер: US20190013796A1
Автор: Desclos Laurent
Принадлежит:

A tunable filter is described where the frequency response as well as bandwidth and transmission loss characteristics can be dynamically altered, providing improved performance for transceiver front-end tuning applications. The rate of roll-off of the frequency response can be adjusted to improve performance when used in duplexer applications. The tunable filter topology is applicable for both transmit and receive circuits. A method is described where the filter characteristics are adjusted to account for and compensate for the frequency response of the antenna used in a communication system. 17-. (canceled)8. A communication system , comprising:at least one tunable filter circuit capable of dynamic adjustment of a center frequency, bandwidth, or transmission loss characteristics;a processor;a lookup table (LUT) resident in the process or other memory cell;wherein frequency channel information is provided by the processor and the look-up table is accessed to determine a tuning component state to alter the tunable filter circuit center frequency, bandwidth, or transmission loss.910-. (canceled)11. The communication system of claim 8 , further comprising an antenna.12. The communication system of claim 11 , wherein the antenna comprises an isolated magnetic dipole antenna.13. The communication system of claim 11 , wherein the processor is configured to adjust a bandwidth of the tunable filter such that the tunable filter and the antenna provide a frequency response characteristic for the communication system.14. The communication system of claim 8 , wherein the at least one tunable filter circuit comprises a first tunable filter circuit in a transmit path and a second tunable filter circuit in a receive path.15. The communication system of claim 8 , wherein the first tunable filter circuit is coupled to an output of a power amplifier.16. The communication system of claim 8 , wherein the second tunable filter circuit is coupled to an input of a low noise amplifier.18. ...

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14-01-2021 дата публикации

Cascode Amplifier Bias Circuits

Номер: US20210013841A1
Принадлежит:

Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit. 1. An amplifier circuit including:(a) a cascode amplifier having at least two serially connected field effect transistor (FET) stages, each FET stage having a gate, a drain, and a source, the bottom FET stage having an input configured to be coupled to an RF input signal to be amplified, and the top FET stage of the cascode amplifier having an output for providing an amplified RF input signal;(b) a cascode reference circuit having at least two serially connected FET stages, each FET having a gate, a drain, and a source, the gates of the bottom two FET stages of the cascode reference circuit being coupled to the corresponding gates of the bottom two FET stages of the cascode amplifier, for biasing the cascode amplifier to output a final current approximately equal to a multiple of a mirror current in the cascode reference circuit;(c) a current source, coupled to the drain of the top FET stage of the cascode reference circuit; and(d) a source follower FET having a gate, a drain, and a source, the drain of the source follower FET ...

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14-01-2021 дата публикации

High frequency amplifier circuit and communication device

Номер: US20210013846A1
Автор: Atsushi Ono
Принадлежит: Murata Manufacturing Co Ltd

A high frequency amplifier circuit includes an input terminal and an output terminal, transmission power amplifiers ( 11 L, 11 H) that amplify a high frequency signal in first and second frequency bands, each of which is a part of a communication band, at equal to or higher than a prescribed amplification factor, respectively, switches ( 21, 31 ) that exclusively switch connection between the input terminal, the transmission power amplifier ( 11 L), and the output terminal, and connection between the input terminal, the transmission power amplifier ( 11 H), and the output terminal, and a transmission filter that is connected between the output terminal and the switch ( 31 ) and has a communication band as a pass band, the first frequency band including a frequency band other than the second frequency band, the second frequency band including a frequency band other than the first frequency band.

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14-01-2021 дата публикации

TRANSCEIVER MODULE

Номер: US20210013853A1
Автор: Ito Masahiro
Принадлежит:

A transceiver module according to an embodiment of the present disclosure includes a power amplifier, a first transformer, a low-noise amplifier, and a second transformer. The power amplifier amplifies a transmission signal for outputting to an antenna terminal. The first transformer includes a first winding and a second winding. The first winding is connected to the antenna terminal, and the second winding is connected to an output side of the power amplifier. The low-noise amplifier amplifies a reception signal inputted through the antenna terminal. The second transformer includes the first winding and a third winding connected to an input side of the low-noise amplifier. 1. A transceiver module comprising:a power amplifier that amplifies a transmission signal for output to an antenna terminal;a first transformer including a first winding and a second winding, the first winding being connected to the antenna terminal, the second winding being connected to an output side of the power amplifier;a low-noise amplifier that amplifies a reception signal inputted through the antenna terminal; anda second transformer including the first winding and a third winding connected to an input side of the low-noise amplifier.2. The transceiver module according to claim 1 , wherein at least one of the power amplifier or the low-noise amplifier is a differential amplifier.3. The transceiver module according to claim 1 , further comprising a switch unit for opening or closing a circuit through which a reception signal is sent from the second transformer to the low-noise amplifier.4. The transceiver module according to claim 3 , wherein the switch unit includes a switch claim 3 , one end of the switch being connected to an end of the third winding claim 3 , and another end of the switch being connected to ground.5. The transceiver module according to claim 3 , whereinthe low-noise amplifier is a differential amplifier, andthe switch unit includes a first switch and a second switch, ...

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09-01-2020 дата публикации

AMPLIFICATION WITH POST-DISTORTION COMPENSATION

Номер: US20200014340A1
Принадлежит:

Amplification with post-distortion compensation is disclosed. In an example aspect, an apparatus includes a voltage rail and a cascode amplifier. The cascode amplifier includes an amplification node, a cascode node, and a common-source node. The cascode amplifier also includes at least one cascode transistor, an input transistor, and a compensation transistor. The cascode transistor is coupled between the amplification node and the cascode node. The input transistor is coupled between the cascode node and the common-source node. The compensation transistor is coupled between the voltage rail and the cascode node. 1. An apparatus for amplification comprising:a voltage rail; and an amplification node;', 'a cascode node;', 'a common-source node;', 'at least one cascode transistor coupled between the amplification node and the cascode node;', 'an input transistor coupled between the cascode node and the common-source node; and', 'a compensation transistor coupled between the voltage rail and the cascode node the compensation transistor including a gate terminal, a source terminal, and a drain terminal, the compensation transistor comprising a diode-connected transistor in which the gate terminal is coupled to the drain terminal, the gate terminal and the drain terminal being coupled to the cascode node., 'a cascode amplifier including2. (canceled)3. The apparatus of claim 3 , wherein:the at least one cascode transistor comprises an n-type metal-oxide-semiconductor (NMOS) field effect transistor (FET) (NFET);the input transistor comprises another NFET; andthe compensation transistor comprises a p-type metal-oxide-semiconductor (PMOS) FET (PFET).4. The apparatus of claim 1 , wherein the at least one cascode transistor comprises:a compensation cascode transistor coupled between the amplification node and the cascode node; anda regular cascode transistor coupled between the amplification node and the cascode node.5. The apparatus of claim 4 , further comprising:a bias ...

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09-01-2020 дата публикации

WIRELESS COMMUNICATIONS CIRCUIT AND ASSOCIATED WIRELESS COMMUNICATIONS DEVICE WITH REDUCED POWER LOSS AND REDUCED CIRCUIT AREA

Номер: US20200014346A1
Принадлежит:

A wireless communications circuit and an associated wireless communications device are provided. The wireless communications circuit may include a power amplifier with integrated filter (PAMiF) module and a two-stage switch module, and the two-stage switch module may include a first switch and a second switch. For example, a first port of the first switch is coupled to a filter port of the PAMiF module, and a second port of the first switch at an opposite side to the first port of the first switch is coupled to a first antenna. In addition, a first port of the second switch is coupled to a third port of the first switch at the opposite side to the first port of the first switch, and a second port of the second switch is coupled to a second antenna. 1. A wireless communications circuit , comprising:a power amplifier with integrated filter (PAMiF) module; and a first switch, wherein a first port of the first switch is coupled to a filter port of the PAMiF module, and a second port of the first switch at an opposite side to the first port of the first switch is coupled to a first antenna; and', 'a second switch, wherein a first port of the second switch is coupled to a third port of the first switch at the opposite side to the first port of the first switch, and a second port of the second switch is coupled to a second antenna., 'a two-stage switch module, comprising2. The wireless communications circuit of claim 1 , further comprising:another PAMiF module, wherein a fourth port of the first switch at a same side as the first port of the first switch is coupled to a filter port of the other PAMiF module.3. The wireless communications circuit of claim 2 , wherein the first switch comprises at least one internal path that is switchable to couple one of the first and the fourth ports of the first switch to one of the second and the third ports of the first switch.4. The wireless communications circuit of claim 1 , wherein the first switch comprises at least one internal ...

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09-01-2020 дата публикации

LOW NOISE TRANS-IMPEDANCE AMPLIFIERS BASED ON COMPLEMENTARY CURRENT-INJECTION FIELD-EFFECT TRANSISTOR DEVICES

Номер: US20200014349A1
Принадлежит:

The present invention relates to a novel and inventive compound device structure for a low noise current amplifier or trans-impedance amplifier. The trans-impedance amplifier includes an amplifier portion, which converts current input into voltage using a complimentary pair of novel n-type and p-type current-injection field-effect transistors (NiFET and PiFET), and a bias generation portion using another complimentary pair of NiFET and PiFET. Trans-impedance of NiFET and PiFET and its gain may be configured and programmed by a ratio of width (W) over length (L) of source channel over the width (W) over length (L) of drain channel (W/L of source channel/W/L of drain channel). 1. A trans-impedance amplifier , comprising:a. a first complementary pair of a first n-type current-injection field-effect transistor (NiFET) and a first p-type current-injection field-effect transistor (PiFET); a source, a drain, a gate, and a diffusion of a corresponding conductivity type of said each of said PiFET and NiFET, defining a source channel between said source and said diffusion, and a drain channel between said drain and said diffusion, and said gate is capacitively coupled to said source channel and said drain channel;', 'wherein said source of said NiFET of said each pair is connected to negative power supply and said source of said PiFET of said each pair is connected to positive power supply, and said drains of said NiFET and said PiFET are connected together to form an output; and', 'wherein said gates of said first complimentary pair and said gates of said second complementary pair are connected with said output of said second complementary pair to for generating a bias voltage output;', 'at least one or both of said diffusion of said first NiFET and said diffusion of said first PiFET receives input current; and', 'said output of said first complementary pair forms a voltage output of said trans-impedance amplifier., 'wherein each of said NiFETs and PiFETs comprises, 'b. a ...

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09-01-2020 дата публикации

MULTIPLEXER, HIGH-FREQUENCY FRONT END CIRCUIT, AND COMMUNICATION DEVICE

Номер: US20200014370A1
Принадлежит:

A hybrid multiplexer includes a filter configured to allow a high-frequency signal of an HB to pass therethrough, and a filter configured to allow a high-frequency signal of an MB to pass therethrough, in which the filter includes a matching circuit, a first resonance circuit defined by one of an LPF and an HPF, and a second resonance circuit defined by the other of the LPF and the HPF, the LPF includes an inductor and a parallel arm resonator, the HPF includes a serial arm resonator and an inductor, and a resonant frequency of the parallel arm resonator and an anti-resonant frequency of the serial arm resonator are both located between a frequency at a low-band end of the HB and a frequency at a high-band end of the HB. 1. A multiplexer comprising:a common terminal;a first filter connected to the common terminal and configured to allow passing of a first frequency band;a second filter connected to the common terminal and configured to allow passing of a second frequency band which does not overlap with the first frequency band; wherein a matching circuit connected to the common terminal;', 'a first resonance circuit cascade connected to the matching circuit and defining one of a low pass filter and a high pass filter; and', 'a second resonance circuit cascade connected to the first resonance circuit and defining another of the low pass filter and the high pass filter;, 'the second filter includes a first inductor provided on a signal path connecting a first terminal and a second terminal of the second filter; and', 'a first parallel arm resonator that is an acoustic wave resonator connected between a node on the signal path and a ground;, 'the low pass filter includes a first serial arm resonator that is an acoustic wave resonator provided on the signal path; and', 'a second inductor connected between a node on the signal path and the ground; and, 'the high pass filter includesa resonant frequency of the first parallel arm resonator and an anti-resonant frequency ...

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19-01-2017 дата публикации

INTEGRATED RF FRONT END SYSTEM

Номер: US20170018607A1
Принадлежит:

Systems and methods are disclosed for integrating functional components of front-end modules for wireless radios. Front-end modules disclosed may be dual-band front-end modules for use in 802.11ac-compliant devices. In certain embodiments, integration of front-end module components on a single die is achieved by implementing a high-resistivity layer or substrate directly underneath, adjacent to, and/or supporting SiGe BiCMOS technology elements. 1. (canceled)2. A semiconductor device for an integrated front-end module comprising:a high-resistivity bulk silicon substrate having a first impurity type and a top surface that lies in a top plane;a silicon germanium bipolar transistor disposed above the high-resistivity bulk silicon substrate;a well located between the silicon germanium bipolar transistor and a passive device, the well providing at least partial electrical isolation between the bipolar transistor and the passive device; anda trench disposed between a sub-collector region of the silicon germanium bipolar transistor and the well, the trench a distance away from the sub-collector region and configured to impede movement across the trench of carriers in the high-resistivity bulk silicon substrate.3. The semiconductor device of wherein the sub-collector region is of a second impurity type that differs from the first impurity type.4. The semiconductor device of further comprising a low-resistivity epitaxial layer disposed adjacent to the top surface and lying in a plane parallel to the top plane.5. The semiconductor device of wherein a resistivity of the low-resistivity epitaxial layer is within a range of around 1-100 Ohms*cm.6. The semiconductor device of wherein the low-resistivity epitaxial layer is of a second impurity type that differs from the first impurity type.7. The semiconductor device of wherein a resistivity of the high-resistivity bulk silicon substrate is at least approximately 1000 Ohms*cm.8. The semiconductor device of wherein the well has a ...

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21-01-2016 дата публикации

SYSTEMS AND METHODS RELATED TO SWITCHABLE OUTPUT STAGES IN POWER AMPLIFIERS

Номер: US20160020732A1
Автор: Wallis Leslie Paul
Принадлежит:

Systems and method related to switchable output stages in power amplifiers. In some embodiments, a power amplifier (PA) circuit can include a driver stage configured to amplify a radio-frequency (RF) signal. The PA circuit can further include a plurality of output stages, with each output stage being configured to be capable of further amplification the RF signal. The PA circuit can further include a switch implemented to route the amplified RF signal from the driver stage to a selected one of the plurality of output stages, such that the selected output stage further amplifies the amplified RF signal.

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21-01-2016 дата публикации

Electronic Device With Low Noise Amplifier Module

Номер: US20160020737A1
Принадлежит:

An electronic device may include an antenna, a transceiver, and a low noise amplifier module that amplifies receive signals from the antenna to the transceiver circuitry in a first configuration and passes transmit signals from the transceiver to the antenna in a second configuration. The low noise amplifier module may include a first switching circuit coupled to the antenna, a second switching circuit coupled to the transceiver, at least one low noise amplifier coupled between the first and second switching circuits, and a transmit bypass path coupled between the first and second switching circuits. The transceiver may be located in a first electronic device region, whereas the low noise amplifier module and the antenna may be located in a second region. The low noise amplifier module may help compensate for signal loss between the first and second regions and allow for transmit signals to pass to the antenna.

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21-01-2016 дата публикации

DIVERSITY AMP MODULE AND APPARATUS COMPRISING THE SAME

Номер: US20160020738A1
Автор: LEE Jae Hoon, SEO Ho Soo
Принадлежит:

An amplifying module having one input terminal and one output terminal and passing an antenna signal input through the input terminal towards the output terminal. The amplifying module includes a first switch connected to the input terminal, a plurality of filters selectable by the first switch, a plurality of amplifiers respectively connected to the plurality of filters and amplifying a signal that has passed through the filters, and a second switch for connecting the amplified signal to the output terminal. 1. An amplifying module having one input terminal and one output terminal and providing a signal path for an antenna signal input via the input terminal and output via the output terminal , comprising:a first switch electrically connected to the input terminal;a plurality of filters selectable for electrical connection by the first switch;a plurality of amplifiers electrically connected to the plurality of filters, respectively, and each one amplifier is configured to amplify a signal output by a respective one of the plurality of filters; anda second switch that is electrically connected to the output terminal and that selectively electrically connects to one of the plurality of amplifiers to provide a path for the amplified signal to the output terminal.2. The amplifying module of claim 1 , wherein the first switch and second switch interwork with each other.3. The amplifying module of claim 1 , wherein the output terminal is connected to a front end module (FEM) through a single path.4. The amplifying module of claim 1 , further comprising a bypass path that bypasses the plurality of amplifiers claim 1 , and that is selectable by the first switch to provide a bypass for the antenna signal from the first switch to the second switch without amplification by one of the plurality of amplifiers.5. The amplifying module of claim 4 , further comprising claim 4 , a Low Noise Amplifier (LNA) arranged in the bypass path between the first switch and the second switch.6 ...

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19-01-2017 дата публикации

LOW NOISE AMPLIFIER

Номер: US20170019074A1
Принадлежит:

A low noise amplifier includes: first and seventh transistors configured to respectively receive first and second input signals; second, third, and fifth transistors connected to the first transistor; eighth, ninth, and eleventh transistors connected to the seventh transistor; a third resistive element; fourth and tenth transistors respectively connected to the third and ninth transistors; sixth and twelfth transistors respectively connected to second and first output terminals; and first and second resistive elements. 1. A low noise amplifier which receives first and second input signals and outputs first and second output signals , the low noise amplifier comprising:a first transistor configured to receive the first input signal at its gate;a second transistor having its gate biased, its source electrically connected to a first potential, and its drain electrically connected to a drain of the first transistor;a third transistor having its gate biased and its source electrically connected to the drain of the first transistor;a fourth transistor having its gate biased, its source electrically connected to a second potential, and its drain electrically connected to a drain of the third transistor;a fifth transistor having its gate electrically connected to the drain of the fourth transistor, its source electrically connected to the second potential, and its drain electrically connected to a source of the first transistor;a sixth transistor having its gate electrically connected to the drain of the fourth transistor, its source electrically connected to the second potential, and its drain electrically connected to a second output terminal configured to output the second output signal;a first resistive element, one terminal of which is electrically connected to the first potential and the other terminal of which is electrically connected to the second output terminal;a seventh transistor configured to receive the second input signal at its gate;an eighth transistor ...

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19-01-2017 дата публикации

Rf amplifier

Номер: US20170019075A1
Автор: Gian Hoogzaad
Принадлежит: NXP BV

An RF amplifier comprising an input-transistor having an input-transistor-base terminal, an input-transistor-collector terminal and an input-transistor-emitter terminal; a degeneration-component connected between the input-transistor-emitter terminal and a ground terminal; and a protection-transistor having a protection-transistor-base terminal, a protection-transistor-collector terminal and a protection-transistor-emitter terminal. The input-transistor-base terminal is connected to the protection-transistor-emitter terminal, and the protection-transistor-base terminal is connected to the input-transistor-emitter.

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19-01-2017 дата публикации

Mobile device, radio transceiver circuit, and impedance adjustment device

Номер: US20170019134A1
Принадлежит: Intel Corp

A mobile phone device, a radio frequency transceiver circuit and an impedance adjusting device. The present invention discloses a mobile phone device. The mobile phone device comprises a baseband processor, an antenna, a duplexer and a radio frequency transceiver circuit. The antenna is used to receive and send radio frequency signals. The duplexer is electrically connected to the antenna. The radio frequency transceiver circuit is connected to the baseband processor and the duplexer, respectively. The radio frequency transceiver circuit comprises a first power amplifier and an impedance adjusting device. The first power amplifier has a first output impedance. The impedance adjusting device is electrically connected between the first power amplifier and the duplexer, and comprises at least one switch, wherein the baseband processor is connected to and control the at least one switch of the impedance adjusting device to adjust an impedance value of the impedance adjusting device, such that a first load impedance of the first power amplifier and the first output impedance match one another.

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03-02-2022 дата публикации

Heterogeneous Semiconductor Transceiver Integrated Circuit

Номер: US20220038066A1
Автор: Farkas David Scott
Принадлежит:

A transceiver integrated circuit comprised of multiple semiconductor technologies that are heterogeneously integrated. The main functions of the transceiver integrated circuit being a power amplifier, low noise amplifier, switch and digital functions. Each function is designed in the desired semiconductor technology where the critical parts of that semiconductor technology are combined with passive components of that function on another semiconductor technology. The result is a transceiver integrated circuit with improved performance and lower cost. 1. The transceiver integrated circuit containing multiple semiconductor technologies heterogeneously integrated through the direct bonding of each component onto a host semiconductor wafer comprising a power amplifier , a low noise amplifier , a switch , and digital control functions.2. The transceiver integrated circuit as defined in further comprising:A host semiconductor wafer comprised of silicon carbide;A power amplifier comprised of gallium nitride active transistor devices bonded to the host semiconductor wafer containing the power amplifier passive components;A low noise amplifier comprised of indium phosphide active transistor devices bonded to the host semiconductor wafer containing the low noise amplifier passive components;A switch comprised of gallium nitride active transistor devices bonded to the host semiconductor wafer containing the switch passive components;A digital control component comprised of silicon active transistor devices and passive components bonded to the host wafer.3. The transceiver integrated circuit as defined in further comprising:A host semiconductor wafer comprised of silicon carbide;A power amplifier comprised of gallium arsenide active transistor devices bonded to the host semiconductor wafer containing the power amplifier passive components;A low noise amplifier comprised of indium phosphide active transistor devices bonded to the host semiconductor wafer containing the low noise ...

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18-01-2018 дата публикации

Source Switched Split LNA

Номер: US20180019710A1
Автор: Emre Ayranci, Miles SANNER
Принадлежит: PSemi Corp

A receiver front end capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. Further switches used for switching degeneration inductors, gate capacitors and gate to ground caps for each legs can be used to further improve the matching performance of the invention.

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18-01-2018 дата публикации

RECONFIGURABLE TRANSCEIVERS

Номер: US20180019759A1
Принадлежит:

A transceiver including: a reconfigurable circuit including a plurality of units including at least a converter, the converter including: a digital-to-analog converter (DAC); successive approximation register (SAR) logic configured to selectively couple to the DAC; and a plurality of switches configured to reconfigure the plurality of units of the reconfigurable circuit to operate the transceiver in a receive mode or transmit mode. 1. A transceiver comprising: a digital-to-analog converter (DAC);', 'successive approximation register (SAR) logic configured to selectively couple to the DAC; and, 'a reconfigurable circuit including a plurality of units comprising at least a converter, the converter comprisinga plurality of switches configured to reconfigure the plurality of units of the reconfigurable circuit to operate the transceiver in a receive mode or transmit mode.2. The transceiver of claim 1 , wherein the converter is operable to be configured as an analog-to-digital converter (ADC) in the receive mode via connection of the SAR logic claim 1 , using one or more of the plurality of switches claim 1 , to the DAC.3. The transceiver of claim 2 , wherein the converter further comprises: a comparator; and a sample and hold circuit coupled to a first input of the comparator.4. The transceiver of claim 3 , wherein the converter is operable to be further configured as the ADC via:connection of a first input of the sample and hold circuit, using one or more of the plurality of switches, to a transceiver branch;connection of a second input of the comparator, using one or more of the plurality of switches, to the DAC; anddisconnection of an output of the DAC, using one or more of the plurality of switches, from the transceiver branch.5. The transceiver of claim 1 , wherein the converter is operable to be configured as the DAC in the transmit mode via disconnection of the SAR logic claim 1 , using one or more of the plurality of switches claim 1 , from the DAC.6. The ...

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18-01-2018 дата публикации

RADIO FREQUENCY (RF) TRANSCEIVER AND OPERATING METHOD THEREOF

Номер: US20180019782A1
Автор: YUN Seok Ju
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A radio frequency (RF) transceiver includes a first oscillator configured to generate a first oscillation frequency associated with an RF signal, a second oscillator configured to generate a second oscillation frequency associated with a clock frequency, a counter configured to generate a counter output signal using the first oscillation frequency and the second oscillation frequency, and a comparer configured to generate a digital output signal associated with the RF signal by comparing an output value of the counter output signal to a reference value. 1. A radio frequency (RF) transceiver comprising:a first oscillator configured to generate a first oscillation frequency associated with an RF signal;a second oscillator configured to generate a second oscillation frequency associated with a clock frequency;a counter configured to generate a counter output signal using the first oscillation frequency and the second oscillation frequency; anda comparer configured to generate a digital output signal associated with the RF signal by comparing an output value of the counter output signal to a reference value.2. The RF transceiver of claim 1 , wherein the counter output signal is associated with a ratio of the first oscillation frequency to the second oscillation frequency.3. The RF transceiver of claim 1 , wherein the first oscillator comprises:an antenna configured to receive the RF signal;a negative R-generator electrically connected to the antenna; anda capacitor bank connected in parallel with the antenna and the negative R-generator.4. The RF transceiver of claim 1 , further comprising:a quenching wave generator configured to generate a quenching signal that controls a negative R-generator of the first oscillator using the second oscillation frequency.5. The RF transceiver of claim 4 , further comprising:an auto gain calibration controller configured to disable the quenching wave generator and the negative R-generator in response to an input power of the RF signal ...

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18-01-2018 дата публикации

CIRCUIT FOR ENHANCING SENSITIVITY OF MOBILE DEVICE

Номер: US20180019858A1
Автор: PEI Weiwei
Принадлежит:

A circuit for enhancing sensitivity of a mobile device is provided. The mobile device includes a transceiver and an antenna. The circuit is coupled between the transceiver and the antenna. The circuit includes a first terminal, a second terminal, a control terminal, a first switch circuitry, a second switch circuitry, and at least one low-noise amplifier. The first terminal is coupled to the transceiver. The second terminal is coupled to the antenna. The control terminal receives a control signal. When the antenna receives a signal, the circuit, according to the control signal, controls the first terminal coupled to the second terminal through the first switch circuitry, the low-noise amplifier, and the second switch circuitry. Through the above circuit, the sensitivity of the antenna is enhanced, the performance of the antenna is improved, and user experience is improved. 1. A circuit for enhancing sensitivity of a mobile device , the mobile device comprising a transceiver and an antenna , the circuit being coupled between the transceiver and the antenna , and the circuit comprising:a first terminal coupled to the transceiver;a second terminal coupled to the antenna;a control terminal receiving a control signal;a first switch circuitry;a second switch circuitry; andat least one low-noise amplifier,wherein when the antenna receives a signal, the circuit, according to the control signal, controls the first terminal coupled to the second terminal through the first switch circuitry, the at least one low-noise amplifier, and the second switch circuitry.2. The circuit for enhancing sensitivity as claimed in claim 1 , wherein when strength of the signal is greater than a predetermined signal-strength threshold claim 1 , the circuit claim 1 , according to the control signal claim 1 , controls the first terminal to be coupled to the second terminal through the first switch circuitry.3. The circuit for enhancing sensitivity as claimed in claim 2 ,wherein the at least one low ...

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17-01-2019 дата публикации

METHOD AND APPARATUS FOR POWER COMBINING

Номер: US20190020093A1
Принадлежит: CommScope Technologies LLC

A stripline radial power combiner is provided. The stripline radial combiner comprises a first stripline level comprising N radial combiner arms coupled to a first common node; a second stripline level comprising a common port coupled to a second common node; wherein the first stripline level is mounted over the second stripline level; and wherein the first common node and the second common node are coupled by a conductive via through the first stripline level and the second stripline level. 1. A stripline radial power combiner , comprising:a first stripline level comprising N radial combiner arms coupled to a first common node;a second stripline level comprising a common port coupled to a second common node;wherein the first stripline level is mounted over the second stripline level; andwherein the first common node and the second common node are coupled by a conductive via through the first stripline level and the second stripline level.2. The stripline radial power combiner of claim 1 , wherein each edge of the common port has a non-linear taper.3. The stripline radial power combiner of claim 2 , wherein the edges of the common port have a Klopfenstein taper.4. The stripline radial power combiner of claim 1 , wherein the common port is curved.5. The stripline radial power combiner of claim 4 , wherein the curve of the common port is a modified Fibonacci spiral.6. The stripline radial power combiner of claim 1 , wherein each pair of adjacent radial arms are separated by an angle equal to three hundred and sixty degrees divided by N.7. The stripline radial power combiner of claim 1 , further comprising an intermediary dielectric layer separating the first stripline level and the second stripline level; andwherein the conductive via passes through the intermediary dielectric layer.8. A stripline radial power combiner system claim 1 , comprising: a first stripline level comprising a first set of N first radial combiner arms coupled to a first common node;', 'a second ...

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17-01-2019 дата публикации

RF AMPLIFIER WITH CONDUCTOR-LESS REGION UNDERLYING FILTER CIRCUIT INDUCTOR, AND METHODS OF MANUFACTURE THEREOF

Номер: US20190020314A1
Принадлежит:

An amplifier includes a semiconductor substrate. A first conductive feature partially covers the bottom substrate surface to define a conductor-less region of the bottom substrate surface. A first current conducting terminal of a transistor is electrically coupled to the first conductive feature. Second and third conductive features may be coupled to other regions of the bottom substrate surface. A first filter circuit includes an inductor formed over a portion of the top substrate surface that is directly opposite the conductor-less region. The first filter circuit may be electrically coupled between a second current conducting terminal of the transistor and the second conductive feature. A second filter circuit may be electrically coupled between a control terminal of the transistor and the third conductive feature. Conductive leads may be coupled to the second and third conductive features, or the second and third conductive features may be coupled to a printed circuit board. 1. A semiconductor die comprising:a semiconductor substrate having a top substrate surface and a bottom substrate surface;a first conductive feature coupled to the bottom substrate surface, wherein the first conductive feature spans a first portion of the bottom substrate surface, and a first conductor-less region in which the conductive feature is not present spans a second portion of the bottom substrate surface;a first transistor at the top substrate surface, wherein the first transistor is electrically connected to the first conductive feature, and the first transistor includes a first current conducting region within the semiconductor substrate, a second current conducting region within the semiconductor substrate, a first control terminal, a first current conducting terminal connected to the first current conducting region, and a second current conducting terminal connected to the second current conducting region; anda first inductor electrically coupled to the second current ...

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17-01-2019 дата публикации

Optimized Multi Gain LNA Enabling Low Current and High Linearity Including Highly Linear Active Bypass

Номер: US20190020322A1
Автор: Ayranci Emre, Sanner Miles
Принадлежит:

An LNA having a plurality of paths, each of which can be controlled independently to achieve a gain mode. Each path includes at least an input FET and an output FET coupled in series. A gate of the output FET is controlled to set the gain of the LNA. Signals to be amplified are applied to the gate of the input FET. Additional stacked FETs are provided in series between the input FET and the output FET. 140-. (canceled)41. A low noise amplifier (LNA) comprising:(a) a first path comprising a first input field effect transistor (FET) having a gate and a source, the first input FET coupled in series with a first output FET having a gate, the gate of the first output FET being coupled to a first bias voltage source;(b) a second path comprising a second input FET having a gate and a source, the second in-put FET coupled in series with a second output FET having a gate, the gate of the first input FET coupled to the gate of the second input FET and the gate of the second output FET selectively coupled to a second bias voltage source, and(c) a source switch coupled between the source of the first input FET and the source of the second input FET such that when the source switch is closed, the source of the first in-put FET is coupled to the source of the second input FET and when the source switch is open, the source of the first input FET is disconnected from the source of the second in-put FET.42. The LNA of claim 41 , the LNA further comprising a cap switch having a first and second terminal and a first capacitive element having a first and second terminal claim 41 , the first terminal of the first capacitive element coupled to the gate of the first input FET the second terminal of the first capacitive element coupled to the first terminal of the cap switch and the second terminal of the cap switch coupled to the source of the first input FET.43. The LNA of claim 41 , the first output FET having a drain claim 41 , the LNA further comprising a resistance and a switch ...

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17-01-2019 дата публикации

FRONT END MODULE FOR 5.6 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

Номер: US20190020328A1
Принадлежит:

A front end module (FEM) for a 5.6 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.6 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.6 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.6 GHz PA, a 5.6 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device. 1. A 5.6 GHz front end module (FEM) device , the device comprising:a power amplifier (PA) electrically coupled to an input node;a 5.6 GHz resonator electrically coupled to the PA; anda diversity switch electrically coupled the 5.6 GHz BAW resonator, an output node, and an antenna.2. The device of wherein the PA comprises a 5.6 GHz power amplifier.3. The device of wherein the 5.6 GHz BAW resonator comprises a 5.6 GHz bulk acoustic wave (BAW) resonator.4. The device of wherein the diversity switch comprises a single pole two throw (SP2T) switch.5. The device of further comprising a low noise amplifier (LNA) electrically coupled to an LNA input node and an LNA output node.6. The device of wherein the LNA comprises a bypassable LNA.7. The device of further comprising a DC power detector having a voltage output claim 1 , the DC power detector being electrically coupled to the PA.8. The device of further comprising an RF power detector having an RF output from a directional coupler claim 1 , the RF power detector being electrically coupled to the PA.9. A 5.6 GHz front end module (FEM) device claim 1 , the device comprising:a power amplifier ...

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16-01-2020 дата публикации

CIRCUIT MODULE

Номер: US20200020645A1
Автор: NAKAJIMA Reiji
Принадлежит:

A circuit module () includes an electronic component (), a plurality of conductor posts (), a mold layer () that seals a plurality of the electronic components () and the plurality of conductor posts (), and a shield layer () on the mold layer (). The electronic components () include a first electronic component () and second electronic components (). The plurality of conductor posts () includes a group of conductor posts () traversing between the first electronic component () and the second electronic components (). The shield layer () includes a slit () that, with respect to each conductor post () included in the group () of conductor posts, in a plan view, passes and extends between the conductor post () and the first electronic component (), or between the conductor post () and the second electronic components (). 1. A circuit module , comprising:a circuit board having an electrical insulating layer and a ground layer, wherein the electrical insulating layer has a mounting surface, and the ground layer is provided on a side of the electrical insulating layer opposite to the mounting surface;a plurality of electronic components mounted on the mounting surface and including a first electronic component and a second electronic component, wherein the first electronic component acts as a source of noise and the second electronic component is an object to be protected from the noise generated in the first electronic component;a plurality of conductor posts including a group of conductor posts arranged so as to traverse between the first electronic component and the second electronic component on the mounting surface and electrically connected to the ground layer;a mold layer having electrical insulation and provided on the mounting surface so as to seal the plurality of electronic components and the plurality of conductor posts; anda shield layer covering a surface on a side of the mold layer opposite to the mounting surface,wherein the shield layer includes a slit, ...

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16-01-2020 дата публикации

FILTER DEVICE, HIGH-FREQUENCY MODULE, AND COMMUNICATION DEVICE

Номер: US20200021275A1
Автор: Ueno Kouichi
Принадлежит:

A transmission filter is arranged in a first filter region and has one or more acoustic wave resonators, a plurality of terminal electrodes, and a plurality of wires. A reception filter is arranged in a second filter region and has one or more acoustic wave resonators, a plurality of terminal electrodes, and a plurality of wires. The first filter region and the second filter region are arranged adjacently to each other and have at least sides constituting a pair and opposing to each other. At least either one of the first filter region and the second filter region has no wire extending along one side in a forbidden region that is defined by a width including a terminal electrode nearest to the one side, along the one side and over the one side opposing to the other filter region. 1. A filter device comprising:a first filter and a second filter arranged adjacently to each other, whereineach of the first filter and the second filter has one or more resonators, a plurality of terminal electrodes, and a plurality of wires connected to at least one terminal electrode out of the plurality of terminal electrodes,the first filter is arranged in a first filter region, the second filter is arranged in a second filter region, and the first filter region and the second filter region are arranged adjacently to each other and have at least one pair of sides opposing to each other, andone or both of the first filter region and the second filter region has a forbidden region, wherein the forbidden region is present along and extended over one side of the pair of sides, and has a width large enough to include a terminal electrode nearest to the one side among the plurality of terminal electrodes, wherein no wire extending along the one side is present in the forbidden region.2. The filter device according to claim 1 , whereinthe first filter comprises a first filter element, andthe second filter comprises a second filter element different from the first filter element.3. The filter ...

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21-01-2021 дата публикации

WIRELESS RECEIVER

Номер: US20210021240A1
Принадлежит:

A low noise amplifier (LNA) includes a pair of n-type transistors, each configured to provide a first transconductance; a pair of p-type transistors, each configured to provide a second transconductance; a first pair of coupling capacitors, cross-coupled between the pair of n-type transistors, and configured to provide a first boosting coefficient to the first transconductance; and a second pair of coupling capacitors, cross-coupled between the pair of p-type transistors, and configured to provide a second boosting coefficient to the second transconductance, wherein the LNA is configured to use a boosted effective transconductance based on the first and second boosting coefficients, and the first and second transconductances to amplify an input signal. 1. A low noise amplifier (LNA) , comprising:a first transistor configured to provide a first transconductance; anda second transistor configured to provide a second transconductance; and an amplifier; and', 'a first resistor having a first end coupled to a first input of the amplifier and a second end, opposite the first end, coupled to a drain of the first transistor, wherein an output of the amplifier is coupled to a gate of the first transistor, and, 'a common-mode feedback circuit, wherein the common-mode feedback circuit compriseswherein the LNA is configured to use a sum of the first and second transconductances to amplify an input signal, and wherein respective source ends of the first and second transistors are coupled to a blocking capacitor.2. The LNA of claim 1 , wherein the first transistor is an n-type metal-oxide-semiconductor field-effect-transistor claim 1 , and the second transistor is a p-type metal-oxide-semiconductor field-effect-transistor.3. The LNA of claim 1 , further comprising:a second resistor having a third end coupled to the first input of the amplifier; anda third transistor having the first transconductance type, wherein a fourth end of the second resistor, opposite the third end, is ...

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21-01-2021 дата публикации

RADIO FREQUENCY SIGNAL TRANSMISSION CIRCUIT WITH A HIGH SWITCHING SPEED

Номер: US20210021290A1
Принадлежит:

A radio frequency signal transmission circuit includes a direct current blocking unit, a biasing impedance circuit, and a radio frequency element. The direct current blocking unit has a first terminal for receiving an input signal, and a second terminal coupled to a first bias voltage terminal. The biasing impedance circuit has a first terminal coupled to the first bias voltage terminal for providing a first bias voltage, and a second terminal coupled to a second bias voltage terminal for receiving a second bias voltage. The radio frequency element is coupled to the first bias voltage terminal, and receives and processes the input signal. When the biasing impedance circuit operates in a first mode, the biasing impedance circuit provides a first impedance. When the biasing impedance circuit operates in a second mode, the biasing impedance circuit provides a second impedance greater than the first impedance. 1. A radio frequency signal transmission circuit comprising:a direct current blocking unit having a first terminal configured to receive an input signal, and a second terminal coupled to a first bias voltage terminal;a first biasing impedance circuit having a first terminal coupled to the first bias voltage terminal for providing a first bias voltage, and a second terminal coupled to a second bias voltage terminal for receiving a second bias voltage; anda radio frequency element coupled to the first bias voltage terminal, and configured to receive and process the input signal;wherein:when the first biasing impedance circuit operates in a first mode, the first biasing impedance circuit is further configured to provide a first impedance; andwhen the first biasing impedance circuit operates in a second mode, the first biasing impedance circuit is further configured to provide a second impedance, wherein the first impedance is smaller than the second impedance.2. The radio frequency signal transmission circuit of claim 1 , wherein when the first biasing impedance ...

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26-01-2017 дата публикации

Method And Apparatus For Adaptive Transmit Power Control

Номер: US20170026014A1
Автор: PETROVIC Branislav
Принадлежит:

Systems and methods for dynamically adjusting transmit gain in a transceiver. The gain is adjusted in order to provide the maximum gain. The amount of distortion is measured. The gain is increased until the distortion reaches a predetermined limit. The gain of several components can be adjusted independently. 1. A transceiver comprising:a variable gain power amplifier (PA), the PA configured to receive a signal to be transmitted, and provide gain to the signal to be transmitted; a first resistor having a first and second terminal, the first terminal of the first resistor coupled to an output of the PA;', 'a switch having a first and second terminal, the second terminal of the first resistor coupled to the first terminal of the switch; and', 'a second resistor having a first and second terminal, the first terminal of the second resistor coupled to the second terminal of the switch and the second terminal of the second resistor coupled to an input to a low noise amplifier (LNA); and, 'a circuit comprising coupled to the PA and to an output of the circuit; and', provide the signal to be transmitted to the PA;', 'measure whether distortion to the signal coupled from the output of the circuit is above an acceptable limit;', 'if the amount of distortion is below the acceptable limit, provide a signal to the PA to increase the gain provided by the PA; and', 'if the amount of distortion is above the acceptable limit, reduce the gain provided by the PA., 'configured to], 'a control module that is2. The transceiver of claim 1 , comprising:a) a transmit block, wherein signals coupled from the control module to an input of the PA are coupled through the transmit block; andb) wherein signals coupled from the circuit to the control module are coupled through the LNA.3. The transceiver of claim 2 , comprising a receive block claim 2 , wherein signals coupled between the LNA and the control module are coupled through the receive block.4. The transceiver of claim 2 , comprising a ...

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25-01-2018 дата публикации

Logarithmic Detector Amplifier System for Use as High Sensitivity Selective Receiver Without Frequency Conversion

Номер: US20180026591A1
Принадлежит:

A logarithmic detector amplifying (LDA) system is provided for use as a high sensitivity receive booster or replacement for a low noise amplifier in a receive chain of a communication device. The LDA system includes an amplifying circuit configured to receive an input signal having a first frequency and generate an oscillation based on the input signal, a sampling circuit coupled to the amplifying circuit and configured to terminate the oscillation based on a predetermined threshold to periodically clamp and restart the oscillation to generate a series of pulses modulated by the oscillation and by the input signal, and one or more resonant circuits coupled with the amplifying circuit and configured to establish a frequency of operation and to generate an output signal having a second frequency, the second frequency being substantially the same as the first frequency. 1. A system for use in a receive chain of a communication device , the system comprising: an amplifying circuit configured to receive a first LDA input signal at the first LDA input from a system input having a first frequency and to generate an oscillation based on the first LDA input signal;', 'a sampling circuit coupled to the amplifying circuit and configured to terminate the oscillation based on a predetermined threshold so as to periodically clamp and restart the oscillation to generate a series of voltage spikes as a first LDA output signal at the first LDA output, wherein the series of voltage spikes have a frequency, wherein the frequency of the voltage spikes varies substantially with a logarithm of a power of the first LDA input signal; and', 'a resonant circuit coupled to the amplifying circuit and configured to generate a second LDA output signal at the second LDA output; and', 'a phase lock loop (PLL) coupled between the first LDA output, the second LDA output and a second LDA input, the phase lock loop including a comparator, a switch and a low pass filter, the comparator being configured ...

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25-01-2018 дата публикации

HIGH-FREQUENCY SIGNAL PROCESSING APPARATUS AND WIRELESS COMMUNICATION APPARATUS

Номер: US20180027503A1
Принадлежит:

A high-frequency signal processing apparatus and a wireless communication apparatus can achieve a decrease in power consumption. For example, when an indicated power level to a high-frequency power amplifier is equal to or greater than a second reference value, envelope tracking is performed by causing a source voltage control circuit to control a high-speed DCDC converter using a detection result of an envelope detecting circuit and causing a bias control circuit to indicate a fixed bias value. The source voltage control circuit and the bias control circuit indicate a source voltage and a bias value decreasing in proportion to a decrease in the indicated power level when the indicated power level is in a range of the second reference value to the first reference value, and indicate a fixed source voltage and a fixed bias value when the indicated power level is less than the first reference value. 1. A wireless communication apparatus comprising:a first power amplifying circuit configured to amplify a first input signal and output a first output signal; and wherein the first power amplifying circuit is configured to:', 'receive a first source voltage increasing in proportion to an increase of an average power level of the first output signal in the first operation mode, and', 'receive a second source voltage having a fixed voltage value in the second operation mode,, 'first and second operation modes,'} receive a first bias increasing in proportion to the increase of the average power level in the first operation mode, and', 'receive a second bias having a first fixed value in the second operation mode,, 'wherein the first power amplifying circuit is configured towherein the first operation mode is performed when the average power level is equal to or greater than a first reference value, andwherein the second operation mode is performed when the average power level is smaller than the first reference value.2. The wireless communication apparatus according to claim ...

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10-02-2022 дата публикации

HIGH LINEARITY LOW NOISE AMPLIFIER

Номер: US20220045650A1
Принадлежит:

An amplifier circuit is disclosed. The amplifier circuit includes an input terminal configured to receive an input signal, an output terminal configured to transmit an output signal, and a first signal path including a first amplifying circuit, where the first amplifying circuit is configured to receive the input signal and to transmit a first amplified output to the output terminal, and where the first amplified output includes first amplifier circuit harmonic noise. The amplifier circuit also includes a second signal path including a second amplifying circuit, where the second amplifying circuit receives the input signal and transmits a second amplified output to the output terminal, and where the second amplified output includes second amplifier circuit harmonic noise. The output signal includes the first and second amplified outputs, and the first amplifying circuit harmonic noise is at least partially canceled by the second amplifying circuit harmonic noise in the output signal. 1. An amplifier circuit , comprising:an input terminal configured to receive an input signal;an output terminal configured to transmit an output signal;a first signal path comprising a first amplifying circuit, wherein the first amplifying circuit is configured to receive the input signal and to transmit a first amplified output to the output terminal, and wherein the first amplified output includes first amplifier circuit harmonic noise;a second signal path comprising a second amplifying circuit, wherein the second amplifying circuit is configured to receive the input signal and to transmit a second amplified output to the output terminal, and wherein the second amplified output includes second amplifier circuit harmonic noise,wherein the output signal comprises the first and second amplified outputs, and wherein the first amplifying circuit harmonic noise is at least partially canceled by the second amplifying circuit harmonic noise in the output signal.2. The amplifier circuit of ...

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10-02-2022 дата публикации

MULTI-FREQUENCY BAND COMMUNICATION BASED ON FILTER SHARING

Номер: US20220045653A1
Принадлежит:

The present disclosure relates to systems and methods for operating transceiver circuitry to transmit or receive signals on various frequency ranges. To do so, a transmitter or a receiver of the transceiver circuitry is selectively coupled to or uncoupled from an antenna of the transceiver circuitry. Additionally, radio frequency filters may be individually or collectively coupled to and/or uncoupled from the antenna to filter different frequencies in the transmitting or receiving signals. 120-. (canceled)21. A device , comprising:one or more antennas;transmission circuitry;receiver circuitry;a first filter communicatively coupled to the one or more antennas;a second filter communicatively coupled to the receiver circuitry;a first switch configured to couple the transmission circuitry to the first filter and the one or more antennas; anda second switch configured to couple the first filter and the one or more antennas to the second filter and the receiver circuitry.22. The device of claim 21 , comprising a controller configured to transmit a transmit signal on a first frequency band byclosing the first switch to couple the transmission circuitry to the first filter and the one or more antennas, andopening the second switch to uncouple the first filter and the one or more antennas from the second filter and the receiver circuitry.23. The device of claim 22 , wherein the controller is configured to transmit the transmit signal on a second frequency band non-overlapping with the first frequency band byclosing the first switch to couple the transmission circuitry to the first filter and the one or more antennas, andclosing the second switch to couple the first filter and the one or more antennas to the second filter and the receiver circuitry.24. The device of claim 23 , wherein the controller is configured to select between the first frequency band and the second frequency band based on an indication of a communication mode.25. The device of claim 23 , comprising a ...

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24-01-2019 дата публикации

AMPLIFIER

Номер: US20190028070A1
Принадлежит:

An amplifier according to an embodiment of the present disclosure includes a first transistor and a first matching circuit. The first matching circuit is connected between an input terminal and a control terminal of the first transistor. A first terminal of the first transistor is connected to a ground. A second terminal of the first transistor is connected to a power supply and an output terminal. The first matching circuit includes a first inductor, a second inductor, and a first switch. The first inductor has an end connected to the control terminal. The second inductor has an end connected to the other end of the first inductor. The first switch is configured to selectively switch between electrical continuity between the input terminal and the other end of the first inductor and electrical continuity between the input terminal and the other end of the second inductor. 1. An amplifier having an input terminal and an output terminal , for amplifying a signal input from the input terminal and outputting an amplified signal from the output terminal , comprising:a first transistor including a control terminal, a first terminal, and a second terminal; anda first matching circuit connected between the input terminal and the control terminal of the first transistor, wherein:the first terminal of the first transistor is connected to a ground,the second terminal of the first transistor is connected to a power supply and the output terminal, and a first inductor having a first end and a second end, the first end of the first inductor being connected to the control terminal,', 'a second inductor having a first end and a second end, the first end of the second inductor being connected to the second end of the first inductor, and', 'a first switch configured to selectively connect the input terminal to the second end of the first inductor or the second end of the second inductor., 'the first matching circuit comprises2. The amplifier according to claim 1 , wherein the first ...

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24-01-2019 дата публикации

COMMUNICATION UNIT

Номер: US20190028074A1
Принадлежит:

A communication unit includes a first input terminal to which a first transmission signal based on a first communication standard is input, a second input terminal to which a second transmission signal based on a second communication standard is input, a first transmission signal amplifier circuit outputting a first amplified transmission signal, or outputting a second amplified transmission signal, a first input-output terminal outputting the first amplified transmission signal or the second amplified transmission signal, and at least one of a first reception signal and a second reception signal inputted to the first input-output terminal, a first reception signal amplifier circuit performing at least one of operation of outputting a first amplified reception signal and operation of outputting a second amplified reception signal, a first output terminal outputting the first amplified reception signal, and a second output terminal outputting the second amplified reception signal. 1. A communication unit comprising:a first communication module comprising:a first input terminal to which a first transmission signal based on a first communication standard is input;a second input terminal to which a second transmission signal based on a second communication standard is input, the second communication standard being different from the first communication standard;a first transmission signal amplifier circuit configured to amplify the first transmission signal and output a first amplified transmission signal, or amplify the second transmission signal and output a second amplified transmission signal;a first input-output terminal configured to output the first amplified transmission signal or the second amplified transmission signal, and receive at least one of a first reception signal based on the first communication standard and a second reception signal based on the second communication standard;a first reception signal amplifier circuit configured to amplify the first ...

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24-01-2019 дата публикации

SEMICONDUCTOR INTEGRATED CIRCUIT

Номер: US20190028075A1
Автор: KAMEZAWA Sho, Kanno Tohru
Принадлежит:

A semiconductor integrated circuit including a differential amplifier circuit, a first output circuit, a second output circuit, a selection circuit, and a feedback circuit. The differential amplifier circuit is configured to operate at a first source voltage. The first output circuit is configured to receive an output of the differential amplifier circuit, output a first output, and operate at the first source voltage. The second output circuit is configured to receive an output of the differential amplifier circuit, output a second output, and operate at a second source voltage lower than the first source voltage. The selection circuit is configured to select one of the first output from the first output circuit and the second output from the second output circuit according to an operating phase determined by an external control signal. The feedback circuit is connected between the differential amplifier circuit and the selection circuit. The feedback circuit is configured to feed the selected output back to the differential amplifier circuit. 1. A semiconductor integrated circuit comprising:a differential amplifier circuit to operate at a first source voltage;a first output circuit electrically connectable to the differential amplifier circuit to receive an output of the differential amplifier circuit and output a first output, the first output circuit operating at the first source voltage;a second output circuit electrically connectable to the differential amplifier circuit to receive an output of the differential amplifier circuit and output a second output, the second output circuit operating at a second source voltage lower than the first source voltage;a selection circuit electrically connectable to each of the first output circuit and the second output circuit, to select one of the first output from the first output circuit and the second output from the second output circuit according to an operating phase determined by an external control signal; anda ...

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05-02-2015 дата публикации

NOISE CANCELING LOW-NOISE AMPLIFIER

Номер: US20150035602A1
Принадлежит:

A noise-canceling LNA circuit for amplifying signals at an operating frequency f in a receiver circuit is disclosed. The LNA circuit comprises a first and a second amplifier branch, each having an input terminal connected to an input terminal of the LNA circuit. The first amplifier branch comprises an output terminal for supplying an output current of the first amplifier branch and a common source or common emitter main amplifier. The main amplifier has an input transistor having a first terminal, which is a gate or base terminal, operatively connected to the input terminal of the first amplifier branch, a shunt-feedback capacitor operatively connected between the first terminal of the input transistor and a second terminal, which is a drain or collector terminal, of the input transistor, and an output capacitor operatively connected between the second terminal of the input transistor and the output terminal of the first amplifier branch. The second amplifier branch comprises an output terminal for supplying an output current of the second amplifier branch. The LNA circuit comprises circuitry for combining the output current of the first amplifier branch and the output current of the second amplifier branch, thereby generating a total output current of the LNA circuit.

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02-02-2017 дата публикации

HIGH LINEARITY STRUCTURE FOR AMPLIFIER

Номер: US20170033744A1
Принадлежит:

An apparatus includes an input amplifier stage and a switch that has a first terminal at a virtual ground input of the input amplifier stage. 1. An apparatus comprising:an input amplifier stage;a switch that has a first terminal at a virtual ground input of the input amplifier stage; anda control signal generator coupled to a control terminal of the switch via a multiplexer and configured to generate a control voltage that substantially tracks a voltage at a second terminal of the switch, the second terminal coupled via a first feedback device to an output of a main amplifier stage.2. The apparatus of claim 1 , wherein the switch is configured to output a first feedback current to an input resistance of the input amplifier stage based on a first control signal.3. The apparatus of claim 2 , wherein a feedback path includes the switch and is coupled to the output of the main amplifier stage.4. The apparatus of claim 3 , further comprising a second feedback path that couples an output of an auxiliary amplifier stage to the virtual ground input claim 3 , wherein the second feedback path includes a second switch.5. The apparatus of claim 4 , wherein the second switch is configured to output a second feedback current to the input amplifier stage based on a second control signal.6. (canceled)7. (canceled)8. The apparatus of claim 1 , further comprising the main amplifier stage coupled to an output of the input amplifier stage claim 1 , wherein the output of the main amplifier stage is coupled to an audio output port.9. The apparatus of claim 1 , wherein a gate voltage of the switch is controlled by the multiplexer.10. An apparatus comprising:means for amplifying, the means for amplifying including an input and an output;means for switching coupled to the input of the means for amplifying;means for conducting feedback current from the output of the means for amplifying via the means for switching to the input of the means for amplifying; andmeans for generating a control ...

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04-02-2016 дата публикации

Dual-band amplifier

Номер: US20160036392A1
Автор: Anup Savla, Mounir Bohsali
Принадлежит: Qualcomm Inc

An apparatus includes: a first amplifier stage configured to receive an input signal through a first gate inductor and a first source inductor; and a second amplifier stage configured to receive the input signal through the first gate inductor in series with a second gate inductor and the first source inductor in series with a second source inductor.

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04-02-2016 дата публикации

APPARATUS AND METHODS FOR OVERDRIVE PROTECTION OF RADIO FREQUENCY AMPLIFIERS

Номер: US20160036395A1
Принадлежит:

Provided herein are apparatus and methods for overdrive protection of radio frequency (RF) amplifiers. In certain configurations, an RF amplifier includes a plurality of amplification stages and an overdrive detection circuit. The overdrive detection circuit determines whether or not the RF amplifier is in an overdrive condition based on a current of an input amplification stage. Additionally, when the overdrive detection circuit detects an overdrive condition, the overdrive detection circuit controls an impedance of one or more feedback circuits of one or more amplification stages subsequent to the input amplification stage in a signal path of the RF amplifier to reduce the RF amplifier's gain. The overdrive protection schemes herein can be used to limit large current and voltage swing conditions manifesting within amplification transistors of the RF amplifier. 1. A radio frequency (RF) amplification system comprising:a plurality of RF amplification stages configured to amplify an RF input signal to generate an RF output signal, the plurality of RF amplification stages including a first amplification stage and a second amplification stage that is subsequent to the first amplification stage in a signal path, the second amplification stage including a second stage transistor and a second stage feedback circuit electrically connected between an input and an output of the second stage transistor; andan overdrive detection circuit configured to sense a current of the first amplification stage to detect when an overdrive condition is present, the overdrive detection circuit further configured to decrease an impedance of the second stage feedback circuit in response to detection of the overdrive condition.2. The RF amplification system of wherein the first amplification stage is an input amplification stage and the second amplification stage is an output amplification stage.3. The RF amplification system of wherein the first amplification stage is an input amplification ...

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31-01-2019 дата публикации

CIRCUIT DEVICE, PHYSICAL QUANTITY MEASURING DEVICE, ELECTRONIC APPARATUS, AND VEHICLE

Номер: US20190033431A1
Принадлежит:

A circuit device includes an analog front-end circuit that receives a target signal is input, and a processing circuit that performs arithmetic processing based on an output signal from the analog front-end circuit. The analog front-end circuit includes a plurality of comparator circuits that compare the voltage level of the target signal to a plurality of threshold voltages and output a plurality of comparison result signals. The processing circuit obtains the transition timing of the target signal based on the comparison result signals and delayed-time information of the analog front-end circuit. 1. A circuit device comprising:an analog front-end circuit that receives a target signal; anda processing circuit that performs arithmetic processing based on an output signal from the analog front-end circuit,wherein the analog front-end circuit includes first to n-th comparator circuits that compare a voltage level of the target signal to first to n-th threshold voltages (n is an integer of 2 or greater) and output first to n-th comparison result signals, andthe processing circuit obtains a transition timing of the target signal based on the first to n-th comparison result signals and delayed-time information of the analog front-end circuit.2. The circuit device according to claim 1 , obtains time-voltage characteristic information based on the first to n-th comparison result signals, the time-voltage characteristic information indicating characteristics of voltage change of the target signal with time, and', 'obtains the delayed-time information based on the time-voltage characteristic information., 'wherein the processing circuit'}3. The circuit device according to claim 1 ,wherein the analog front-end circuit includes a measurement circuit that measures a measurement voltage based on the voltage level of the target signal, at a transition timing of at least one of the first to n-th comparison result signals, andthe processing circuit obtains the delayed-time ...

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01-02-2018 дата публикации

SELECTING BETWEEN BOOSTED SUPPLY AND BATTERY SUPPLY

Номер: US20180034415A1
Принадлежит:

Certain aspects of the present disclosure provide methods and apparatus for generating an envelope tracking power supply voltage. For example, certain aspects of the present disclosure provide an envelope tracking power supply having a linear amplifier having an output coupled to a power supply node of an amplifier, wherein a power supply node of the linear amplifier is coupled to a first voltage supply node. The envelope tracking power supply may also include a switch mode power supply having an output coupled to the power supply node of the amplifier. Certain aspects also include a circuit having a first switch coupled to the first voltage supply node and a second switch coupled to a second voltage supply node, wherein a power supply node of the switch mode power supply is coupled to the first switch and the second switch. 1. An envelope tracking power supply , comprising:a linear amplifier having an output coupled to a power supply node of an amplifier, wherein a power supply node of the linear amplifier is coupled to a first voltage supply node;a switch mode power supply (SMPS) having an output coupled to the power supply node of the amplifier; anda circuit having a first switch coupled to the first voltage supply node and a second switch coupled to a second voltage supply node, wherein a power supply node of the SMPS is coupled to the first switch and the second switch.2. The envelope tracking power supply of claim 1 , further comprising:a demultiplexer coupled to the first switch and the second switch.3. The envelope tracking power supply of claim 2 , wherein the demultiplexer is configured to control the first switch and the second switch based on a control signal claim 2 , wherein the control signal is generated based on an envelope of an input signal to the amplifier and a voltage at the first voltage supply node.4. The envelope tracking power supply of claim 1 , wherein:the first switch couples the first voltage supply node to the power supply node of the ...

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01-02-2018 дата публикации

POWER SUPPLY CONTROL

Номер: US20180034417A1
Принадлежит:

Certain aspects of the present disclosure provide methods and apparatus for adjusting voltage regulators of a power supply, such as an envelope tracking power supply. Certain aspects provide a power supply. The power supply may include a first voltage regulator having an output coupled to a voltage supply node of an amplifier. The power supply may further include a second voltage regulator having an output coupled to the voltage supply node of the amplifier. The power supply may further include a controller for adjusting a ratio of an average current supplied by the first voltage regulator to an average current supplied by the second voltage regulator to the voltage supply node of the amplifier based on an output voltage supplied to the voltage supply node of the amplifier by the first voltage regulator and the second voltage regulator. 1. An apparatus , comprising:a first voltage regulator having an output coupled to a voltage supply node of an amplifier;a second voltage regulator having an output coupled to the voltage supply node of the amplifier; anda controller configured to adjust a ratio of an average current supplied by the first voltage regulator to an average current supplied by the second voltage regulator to the voltage supply node of the amplifier based on an output voltage supplied to the voltage supply node of the amplifier by the first voltage regulator and the second voltage regulator.2. The apparatus of claim 1 , wherein the first voltage regulator comprises a switch mode power supply claim 1 , and wherein the second voltage regulator comprises a linear regulator.3. The apparatus of claim 2 , wherein the average current supplied by the switch mode power supply decreases and the average current supplied by the linear regulator increases as the output voltage increases.4. The apparatus of claim 2 , wherein the linear regulator is coupled to a feedback path from the voltage supply node of the amplifier claim 2 , the linear regulator being configured ...

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01-02-2018 дата публикации

AMPLIFIER ADAPTED FOR NOISE SUPPRESSION

Номер: US20180034420A1
Принадлежит:

Systems and methods of noise suppression by an amplifier are presented. In one exemplary embodiment, an amplifier comprises first and fourth transistors configured as a first differential pair of transistors in a common-gate configuration, and second and third transistors configured as a second differential pair of transistors in a common-source configuration. The first and fourth transistors are operative to receive, from a differential input, by a source of each first and fourth transistor, a differential input signal. Further, a drain of each first and fourth transistor is coupled to respective first and second outputs configured as a differential output. The second and third transistors are operative to output, from a drain of each second and third transistor, to the respective second and first outputs, a differential output signal. Further, a gate of each second and third transistor is coupled to the respective first and second inputs. 1. An amplifier adapted for noise suppression , comprising:first and fourth transistors configured as a first differential pair of transistors in a common-gate configuration and operative to receive, from first and second inputs configured as a differential input, by a source of each respective first and fourth transistor, a differential input signal, with a drain of each first and fourth transistor coupled to respective first and second outputs configured as a differential output;second and third transistors configured as a second differential pair of transistors in a common-source configuration and operative to output, from a drain of each respective second and third transistor, to the respective second and first outputs, a differential output signal, with a gate of each second and third transistor coupled to the respective first and second inputs; andwherein a transconductance of each second and third transistor exceeds a transconductance of the respective first and fourth transistors.2. The amplifier of claim 1 , wherein the ...

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