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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 54. Отображено 54.
26-12-2017 дата публикации

Increased contact alignment tolerance for direct bonding

Номер: US0009852988B2
Автор: Paul M. Enquist, Gaius Gillman Fountain, Jr., Javier A. DeLaCruz, ENQUIST PAUL M, FOUNTAIN JR GAIUS GILLMAN, DELACRUZ JAVIER A, Enquist Paul M., Fountain, Jr. Gaius Gillman, DeLaCruz Javier A.
Принадлежит: INVENSAS BONDING TECHNOLOGIES, INC., INVENSAS BONDING TECH INC

A bonded device structure including a first substrate having a first set of conductive contact structures, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the contact structures on the first substrate, a second substrate having a second set of conductive contact structures, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the contact structures on the second substrate, and a contact-bonded interface between the first and second set of contact structures formed by contact bonding of the first non-metallic region to the second non-metallic region. The contact structures include elongated contact features, such as individual lines or lines connected in a grid, that are non-parallel on the two substrates, making contact at intersections. Alignment tolerances are thus improved while minimizing dishing and parasitic capacitance.

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Номер записи: 1
24-04-2018 дата публикации

Conductive barrier direct hybrid bonding

Номер: US0009953941B2
Автор: Paul M. Enquist, ENQUIST PAUL M, Enquist, Paul M.
Принадлежит: INVENSAS BONDING TECHNOLOGIES, INC., INVENSAS BONDING TECH INC

A method for forming a direct hybrid bond and a device resulting from a direct hybrid bond including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, capped by a conductive barrier, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads capped by a second conductive barrier, aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads capped by conductive barriers formed by contact bonding of the first non-metallic region to the second non-metallic region.

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Номер записи: 2
30-07-2019 дата публикации

Three dimensional device integration method and integrated device

Номер: US0010366962B2
Автор: Paul M. Enquist, Gaius Gillman Fountain, Jr., ENQUIST PAUL M, FOUNTAIN JR GAIUS GILLMAN, Enquist, Paul M., Fountain, Jr., Gaius Gillman
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC, INVENSAS BONDING TECHNOLOGIES, INC.

A method may include the steps of directly bonding a semiconductor device having a substrate to an element; and removing a portion of the substrate to expose a remaining portion of the semiconductor device after bonding. The element may include one of a substrate used for thermal spreading, impedance matching or for RF isolation, an antenna, and a matching network comprised of passive elements. A second thermal spreading substrate may be bonded to the remaining portion of the semiconductor device. Interconnections may be made through the first or second substrates. The method may also include bonding a plurality of semiconductor devices to an element, and the element may have recesses in which the semiconductor devices are disposed.

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Номер записи: 3
18-05-2021 дата публикации

Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics

Номер: US0011011494B2
Автор: Guilian Gao, Gaius Gillman Fountain, Jr., Laura Wills Mirkarimi, Rajesh Katkar, Ilyas Mohammed, Cyprian Emeka Uzoh, GAO GUILIAN, FOUNTAIN JR GAIUS GILLMAN, MIRKARIMI LAURA WILLS, KATKAR RAJESH, MOHAMMED ILYAS, UZOH CYPRIAN EMEKA, Gao, Guilian, Fountain, Jr., Gaius Gillman, Mirkarimi, Laura Wills, Katkar, Rajesh, Mohammed, Ilyas, Uzoh, Cyprian Emeka
Принадлежит: INVENSAS BONDING TECHNOLOGIES, INC., INVENSAS BONDING TECH INC, Invensas Bonding Technologies, Inc.

Layer structures for making direct metal-to-metal bonds at low temperatures and shorter annealing durations in microelectronics are provided. Example bonding interface structures enable direct metal-to-metal bonding of interconnects at low annealing temperatures of 150° C. or below, and at a lower energy budget. The example structures provide a precise metal recess distance for conductive pads and vias being bonded that can be achieved in high volume manufacturing. The example structures provide a vertical stack of conductive layers under the bonding interface, with geometries and thermal expansion features designed to vertically expand the stack at lower temperatures over the precise recess distance to make the direct metal-to-metal bonds. Further enhancements, such as surface nanotexture and copper crystal plane selection, can further actuate the direct metal-to-metal bonding at lowered annealing temperatures and shorter annealing durations.

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Номер записи: 4
02-06-2020 дата публикации

Microelectronic assembly from processed substrate

Номер: US0010672654B2
Автор: Cyprian Emeka Uzoh, Laura Wills Mirkarimi, UZOH CYPRIAN EMEKA, MIRKARIMI LAURA WILLS, Uzoh, Cyprian Emeka, Mirkarimi, Laura Wills
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

Representative implementations of techniques, methods, and formulary provide repairs to processed semiconductor substrates, and associated devices, due to erosion or “dishing” of a surface of the substrates. The substrate surface is etched until a preselected portion of one or more embedded interconnect devices protrudes above the surface of the substrate. The interconnect devices are wet etched with a selective etchant, according to a formulary, for a preselected period of time or until the interconnect devices have a preselected height relative to the surface of the substrate. The formulary includes one or more oxidizing agents, one or more organic acids, and glycerol, where the one or more oxidizing agents and the one or more organic acids are each less than 2% of formulary and the glycerol is less than 10% of the formulary.

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Номер записи: 5
16-02-2021 дата публикации

Cavity packages

Номер: US0010923408B2
Автор: Shaowu Huang, Javier A. DeLaCruz, Liang Wang, Rajesh Katkar, Belgacem Haba, HUANG SHAOWU, DELACRUZ JAVIER A, WANG LIANG, KATKAR RAJESH, HABA BELGACEM, Huang, Shaowu, DeLaCruz, Javier A., Wang, Liang, Katkar, Rajesh, Haba, Belgacem
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

An integrated device package is disclosed. The integrated device package can include an integrated device die, an element, a cavity, and an electrical interconnect. The element can have an antenna structure. The element can be attached to a surface of the integrated device. The cavity can be disposed between the integrated device die and the antenna structure. The electrical interconnect can connect the integrated device die and the antenna structure.

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Номер записи: 6
29-12-2020 дата публикации

Bonded structures

Номер: US0010879207B2
Автор: Liang Wang, Rajesh Katkar, Javier A. DeLaCruz, Arkalgud R. Sitaram, WANG LIANG, KATKAR RAJESH, DELACRUZ JAVIER A, SITARAM ARKALGUD R, Wang, Liang, Katkar, Rajesh, DeLaCruz, Javier A., Sitaram, Arkalgud R.
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC, INVENSAS BONDING TECHNOLOGIES, INC.

A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.

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Номер записи: 7
27-11-2018 дата публикации

Room temperature metal direct bonding

Номер: US0010141218B2
Автор: Qin-Yi Tong, Paul M. Enquist, Anthony Scot Rose, TONG QIN-YI, ENQUIST PAUL M, ROSE ANTHONY SCOT, Tong, Qin-Yi, Enquist, Paul M., Rose, Anthony Scot
Принадлежит: INVENSAS BONDING TECHNOLOGIES, INC., INVENSAS BONDING TECH INC

A bonded device structure including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads formed by contact bonding of the first non-metallic region to the second non-metallic region. At least one of the first and second substrates may be elastically deformed.

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Номер записи: 8
23-04-2019 дата публикации

Die processing

Номер: US0010269756B2
Автор: Cyprian Emeka Uzoh, UZOH CYPRIAN EMEKA, Uzoh, Cyprian Emeka
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

Representative implementations provide techniques and systems for processing integrated circuit (IC) dies. Dies being prepared for intimate surface bonding (to other dies, to substrates, to another surface, etc.) may be processed with a minimum of handling, to prevent contamination of the surfaces or the edges of the dies. The techniques include processing dies while the dies are on a dicing sheet or other device processing film or surface. Systems include integrated cleaning components arranged to perform multiple cleaning processes simultaneously.

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Номер записи: 9
29-12-2020 дата публикации

Processed stacked dies

Номер: US0010879212B2
Автор: Cyprian Emeka Uzoh, Guilian Gao, Laura Wills Mirkarimi, Gaius Gillman Fountain, Jr., UZOH CYPRIAN EMEKA, GAO GUILIAN, MIRKARIMI LAURA WILLS, FOUNTAIN JR GAIUS GILLMAN, Uzoh, Cyprian Emeka, Gao, Guilian, Mirkarimi, Laura Wills, Fountain, Jr., Gaius Gillman
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

Representative implementations of techniques and methods include processing singulated dies in preparation for bonding. A plurality of semiconductor die components may be singulated from a wafer component, the semiconductor die components each having a substantially planar surface. Particles and shards of material may be removed from edges of the plurality of semiconductor die component. Additionally, one or more of the plurality of semiconductor die components may be bonded to a prepared bonding surface, via the substantially planar surface.

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Номер записи: 10
16-04-2019 дата публикации

Conductive barrier direct hybrid bonding

Номер: US0010262963B2
Автор: Paul M. Enquist, ENQUIST PAUL M, Enquist, Paul M.
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC, INVENSAS BONDING TECHNOLOGIES, INC.

A method for forming a direct hybrid bond and a device resulting from a direct hybrid bond including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, capped by a conductive barrier, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads capped by a second conductive barrier, aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads capped by conductive barriers formed by contact bonding of the first non-metallic region to the second non-metallic region.

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Номер записи: 11
17-11-2020 дата публикации

Chemical mechanical polishing for hybrid bonding

Номер: US0010840205B2
Автор: Gaius Gillman Fountain, Jr., Chandrasekhar Mandalapu, Cyprian Emeka Uzoh, Jeremy Alfred Theil, FOUNTAIN JR GAIUS GILLMAN, MANDALAPU CHANDRASEKHAR, UZOH CYPRIAN EMEKA, THEIL JEREMY ALFRED, Fountain, Jr., Gaius Gillman, Mandalapu, Chandrasekhar, Uzoh, Cyprian Emeka, Theil, Jeremy Alfred
Принадлежит: INVENSAS BONDING TECHNOLOGIES, INC., INVENSAS BONDING TECH INC, Invensas Bonding Technologies, Inc.

Methods for hybrid bonding include depositing and patterning a dielectric layer on a substrate to form openings in the dielectric layer, depositing a barrier layer over the dielectric layer and within a first portion of the openings, and depositing a conductive structure over the barrier layer and within a second portion of the openings not occupied by the barrier layer, at least a portion of the conductive structure in the second portion of the openings coupled or contacting electrical circuitry within the substrate. The conductive structure is polished to reveal portions of the barrier layer deposited over the dielectric layer and not in the second portion of the openings. Further, the barrier layer is polished with a selective polish to reveal a bonding surface on or at the dielectric layer.

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Номер записи: 12
09-11-2021 дата публикации

Interlayer connection of stacked microelectronic components

Номер: US0011171117B2
Автор: Guilian Gao, Belgacem Haba, GAO GUILIAN, HABA BELGACEM
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

Representative techniques and devices including process steps may be employed to form a common interconnection of a multi-die or multi-wafer stack. Each device of the stack includes a conductive pad disposed at a predetermined relative position on a surface of the device. The devices are stacked to vertically align the conductive pads. A through-silicon via is formed that electrically couples the conductive pads of each device of the stack.

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Номер записи: 13
31-03-2020 дата публикации

Increased contact alignment tolerance for direct bonding

Номер: US0010607937B2
Автор: Paul M. Enquist, Gaius Gillman Fountain, Jr., Javier A. DeLaCruz, ENQUIST PAUL M, FOUNTAIN JR GAIUS GILLMAN, DELACRUZ JAVIER A, Enquist, Paul M., Fountain, Jr., Gaius Gillman, DeLaCruz, Javier A.
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC, INVENSAS BONDING TECHNOLOGIES, INC.

A bonded device structure including a first substrate having a first set of conductive contact structures, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the contact structures on the first substrate, a second substrate having a second set of conductive contact structures, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the contact structures on the second substrate, and a contact-bonded interface between the first and second set of contact structures formed by contact bonding of the first non-metallic region to the second non-metallic region. The contact structures include elongated contact features, such as individual lines or lines connected in a grid, that are non-parallel on the two substrates, making contact at intersections. Alignment tolerances are thus improved while minimizing dishing and parasitic capacitance.

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Номер записи: 14
09-11-2021 дата публикации

Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects

Номер: US0011169326B2
Автор: Shaowu Huang, Javier A. Delacruz, Liang Wang, Guilian Gao, HUANG SHAOWU, DELACRUZ JAVIER A, WANG LIANG, GAO GUILIAN
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects are provided. An example optical interconnect joins first and second optical conduits. A first direct oxide bond at room temperature joins outer claddings of the two optical conduits and a second direct bond joins the inner light-transmitting cores of the two conduits at an annealing temperature. The two low-temperature bonds allow photonics to coexist in an integrated circuit or microelectronics package without conventional high-temperatures detrimental to microelectronics. Direct-bonded square, rectangular, polygonal, and noncircular optical interfaces provide better matching with rectangular waveguides and better performance. Direct oxide-bonding processes can be applied to create running waveguides, photonic wires, and optical routing in an integrated circuit package or in chip-to-chip optical communications without need for conventional optical couplers. An example wafer-level ...

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Номер записи: 15
04-05-2021 дата публикации

Interface structures and methods for forming same

Номер: US0010998265B2
Автор: Shaowu Huang, Javier A. DeLaCruz, HUANG SHAOWU, DELACRUZ JAVIER A, Huang, Shaowu, DeLaCruz, Javier A.
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC, INVENSAS BONDING TECHNOLOGIES, INC.

A stacked and electrically interconnected structure is disclosed. The stacked structure can include a first element comprising a first contact pad and a second element comprising a second contact pad. The first contact pad and the second contact pad can be electrically and mechanically connected to one another by an interface structure. The interface structure can comprise a passive equalization circuit that includes a resistive electrical pathway between the first contact pad and the second contact pad and a capacitive electrical pathway between the first contact pad and the second contact pad. The resistive electrical pathway and the capacitive electrical pathway form an equivalent parallel resistor-capacitor (RC) equalization circuit.

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Номер записи: 16
31-12-2019 дата публикации

Bonded structures

Номер: US0010522499B2
Автор: Paul M. Enquist, Liang Wang, Rajesh Katkar, Javier A. DeLaCruz, Arkalgud R. Sitaram, ENQUIST PAUL M, WANG LIANG, KATKAR RAJESH, DELACRUZ JAVIER A, SITARAM ARKALGUD R, Enquist, Paul M., Wang, Liang, Katkar, Rajesh, DeLaCruz, Javier A., Sitaram, Arkalgud R.
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

A bonded structure can include a first element having a first interface feature and a second element having a second interface feature. The first interface feature can be bonded to the second interface feature to define an interface structure. A conductive trace can be disposed in or on the second element. A bond pad can be provided at an upper surface of the first element and in electrical communication with the conductive trace. An integrated device can be coupled to or formed with the first element or the second element.

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Номер записи: 17
19-01-2021 дата публикации

Systems and methods for efficient transfer of semiconductor elements

Номер: US0010896902B2
Автор: Cyprian Emeka Uzoh, Paul M. Enquist, Gaius Gillman Fountain, Jr., UZOH CYPRIAN EMEKA, ENQUIST PAUL M, FOUNTAIN JR GAIUS GILLMAN, Uzoh, Cyprian Emeka, Enquist, Paul M., Fountain, Jr., Gaius Gillman
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

Systems and methods for efficient transfer of elements are disclosed. A film which supports a plurality of diced integrated device dies can be provided. The plurality of diced integrated device dies can be disposed adjacent one another along a surface of the film. The film can be positioned adjacent the support structure such that the surface of the film faces a support surface of the support structure. The film can be selectively positioned laterally relative to the support structure such that a selected first die is aligned with a first location of the support structure. A force can be applied in a direction nonparallel to the surface of the film to cause the selected first die to be directly transferred from the film to the support structure.

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Номер записи: 18
30-04-2019 дата публикации

Structure comprising at least a first element bonded to a carrier having a closed metallic channel waveguide formed therein

Номер: US0010276909B2
Автор: Shaowu Huang, Javier A. DeLaCruz, Belgacem Haba, HUANG SHAOWU, DELACRUZ JAVIER A, HABA BELGACEM, Huang, Shaowu, DeLaCruz, Javier A., Haba, Belgacem
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC, INVENSAS BONDING TECHNOLOGIES, INC.

A structure can include a first element and a carrier bonded to the first element along an interface. A waveguide can be defined at least in part along the interface between the first element and the carrier. The waveguide can comprise an effectively closed metallic channel and a dielectric material within the effectively closed metallic channel, as viewed from a side cross-section of the structure. Various millimeter-wave or sub-terahertz components or circuit structures can also be created based on the waveguide structures disclosed herein.

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Номер записи: 19
15-10-2019 дата публикации

Interface structures and methods for forming same

Номер: US0010446487B2
Автор: Shaowu Huang, Javier DeLaCruz, HUANG SHAOWU, DELACRUZ JAVIER, Huang, Shaowu, DeLaCruz, Javier
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC, INVENSAS BONDING TECHNOLOGIES, INC.

A stacked and electrically interconnected structure is disclosed. The stacked structure can include a first element comprising a first contact pad and a second element comprising a second contact pad. The first contact pad and the second contact pad can be electrically and mechanically connected to one another by an interface structure. The interface structure can comprise a passive equalization circuit that includes a resistive electrical pathway between the first contact pad and the second contact pad and a capacitive electrical pathway between the first contact pad and the second contact pad. The resistive electrical pathway and the capacitive electrical pathway form an equivalent parallel resistor-capacitor (RC) equalization circuit.

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Номер записи: 20
08-10-2019 дата публикации

Method of room temperature covalent bonding

Номер: US0010434749B2
Автор: Qin-Yi Tong, TONG QIN-YI, Tong, Qin-Yi
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC, INVENSAS BONDING TECHNOLOGIES, INC.

A method of bonding includes using a bonding layer having a fluorinated oxide. Fluorine may be introduced into the bonding layer by exposure to a fluorine-containing solution, vapor or gas or by implantation. The bonding layer may also be formed using a method where fluorine is introduced into the layer during its formation. The surface of the bonding layer is terminated with a desired species, preferably an NH2 species. This may be accomplished by exposing the bonding layer to an NH4OH solution. High bonding strength is obtained at room temperature. The method may also include bonding two bonding layers together and creating a fluorine distribution having a peak in the vicinity of the interface between the bonding layers. One of the bonding layers may include two oxide layers formed on each other. The fluorine concentration may also have a second peak at the interface between the two oxide layers.

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Номер записи: 21
07-01-2020 дата публикации

Probe methodology for ultrafine pitch interconnects

Номер: US0010529634B2
Автор: Javier A. Delacruz, Paul M. Enquist, Gaius Gillman Fountain, Jr., Ilyas Mohammed, DELACRUZ JAVIER A, ENQUIST PAUL M, FOUNTAIN JR GAIUS GILLMAN, MOHAMMED ILYAS, Delacruz, Javier A., Enquist, Paul M., Fountain, Jr., Gaius Gillman, Mohammed, Ilyas
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

Representative implementations of devices and techniques provide a temporary access point (e.g., for testing, programming, etc.) for a targeted interconnect located among multiple finely spaced interconnects on a surface of a microelectronic component. One or more sacrificial layers are disposed on the surface of the microelectronic component, overlaying the multiple interconnects. An insulating layer is disposed between a conductive layer and the surface, and includes a conductive via through the insulating layer that electrically couples the conductive layer to the target interconnect. The sacrificial layers are configured to be removed after the target interconnect has been accessed, without damaging the surface of the microelectronic component.

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Номер записи: 22
15-06-2021 дата публикации

Techniques for processing devices

Номер: US0011037919B2
Автор: Cyprian Emeka Uzoh, Laura Wills Mirkarimi, Guilian Gao, Gaius Gillman Fountain, Jr., UZOH CYPRIAN EMEKA, MIRKARIMI LAURA WILLS, GAO GUILIAN, FOUNTAIN JR GAIUS GILLMAN, Uzoh, Cyprian Emeka, Mirkarimi, Laura Wills, Gao, Guilian, Fountain, Jr., Gaius Gillman
Принадлежит: INVENSAS BONDING TECHNOLOGIES, INC., INVENSAS BONDING TECH INC, Invensas Bonding Technologies, Inc.

Representative techniques provide process steps for forming a microelectronic assembly, including preparing microelectronic components such as dies, wafers, substrates, and the like, for bonding. One or more surfaces of the microelectronic components are formed and prepared as bonding surfaces. The microelectronic components are stacked and bonded without adhesive at the prepared bonding surfaces.

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Номер записи: 23
15-09-2020 дата публикации

Heterogeneous device

Номер: US0010777533B2
Автор: Paul M. Enquist, Gaius Gillman Fountain, ENQUIST PAUL M, FOUNTAIN GAIUS GILLMAN, Enquist, Paul M., Fountain, Gaius Gillman
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

A method of integrating a first substrate having a first surface with a first insulating material and a first contact structure with a second substrate having a second surface with a second insulating material and a second contact structure. The first insulating material is directly bonded to the second insulating material. A portion of the first substrate is removed to leave a remaining portion. A third substrate having a coefficient of thermal expansion (CTE) substantially the same as a CTE of the first substrate is bonded to the remaining portion. The bonded substrates are heated to facilitate electrical contact between the first and second contact structures. The third substrate is removed after heating to provided a bonded structure with reliable electrical contacts.

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Номер записи: 24
24-12-2019 дата публикации

Die processing

Номер: US0010515925B2
Автор: Cyprian Emeka Uzoh, UZOH CYPRIAN EMEKA, Uzoh, Cyprian Emeka
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

Representative implementations provide techniques and systems for processing integrated circuit (IC) dies. Dies being prepared for intimate surface bonding (to other dies, to substrates, to another surface, etc.) may be processed with a minimum of handling, to prevent contamination of the surfaces or the edges of the dies. The techniques include processing dies while the dies are on a dicing sheet or other device processing film or surface. Systems include integrated cleaning components arranged to perform multiple cleaning processes simultaneously.

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Номер записи: 25
08-06-2021 дата публикации

Diffusion barrier collar for interconnects

Номер: US0011031285B2
Автор: Rajesh Katkar, Cyprian Emeka Uzoh, KATKAR RAJESH, UZOH CYPRIAN EMEKA, Katkar, Rajesh, Uzoh, Cyprian Emeka
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

Representative implementations of techniques and devices are used to reduce or prevent conductive material diffusion into insulating or dielectric material of bonded substrates. Misaligned conductive structures can come into direct contact with a dielectric portion of the substrates due to overlap, especially while employing direct bonding techniques. A barrier interface that can inhibit the diffusion is disposed generally between the conductive material and the dielectric at the overlap.

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Номер записи: 26
04-05-2021 дата публикации

Offset pads over TSV

Номер: US0010998292B2
Автор: Bongsub Lee, Guilian Gao, LEE BONGSUB, GAO GUILIAN, Lee, Bongsub, Gao, Guilian
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

Representative techniques and devices including process steps may be employed to mitigate the potential for delamination of bonded microelectronic substrates due to metal expansion at a bonding interface. For example, a metal pad may be disposed at a bonding surface of at least one of the microelectronic substrates, where the contact pad is positioned offset relative to a TSV in the substrate and electrically coupled to the TSV.

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Номер записи: 27
19-05-2020 дата публикации

Selective recess

Номер: US0010658313B2
Автор: Javier A. Delacruz, Rajesh Katkar, Shaowu Huang, Gaius Gillman Fountain, Jr., Liang Wang, Laura Wills Mirkarimi, DELACRUZ JAVIER A, KATKAR RAJESH, HUANG SHAOWU, FOUNTAIN JR GAIUS GILLMAN, WANG LIANG, MIRKARIMI LAURA WILLS, Delacruz, Javier A., Katkar, Rajesh, Huang, Shaowu, Fountain, Jr., Gaius Gillman, Wang, Liang, Mirkarimi, Laura Wills
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

Representative implementations of techniques and devices are used to remedy or mitigate the effects of damaged interconnect pads of bonded substrates. A recess of predetermined size and shape is formed in the surface of a second substrate of the bonded substrates, at a location that is aligned with the damaged interconnect pad on the first substrate. The recess encloses the damage or surface variance of the pad, when the first and second substrates are bonded.

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Номер записи: 28
26-10-2021 дата публикации

Molded direct bonded and interconnected stack

Номер: US0011158606B2
Автор: Guilian Gao, Cyprian Emeka Uzoh, Jeremy Alfred Theil, Belgacem Haba, Rajesh Katkar, GAO GUILIAN, UZOH CYPRIAN EMEKA, THEIL JEREMY ALFRED, HABA BELGACEM, KATKAR RAJESH, Gao, Guilian, Uzoh, Cyprian Emeka, Theil, Jeremy Alfred, Haba, Belgacem, Katkar, Rajesh
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

Dies and/or wafers are stacked and bonded in various arrangements including stacks, and may be covered with a molding to facilitate handling, packaging, and the like. In various examples, the molding may cover more or less of a stack, to facilitate connectivity with the devices of the stack, to enhance thermal management, and so forth.

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Номер записи: 29
26-10-2021 дата публикации

Interconnect structures

Номер: US0011158573B2
Автор: Cyprian Emeka Uzoh, Gaius Gillman Fountain, Jr., Jeremy Alfred Theil, UZOH CYPRIAN EMEKA, FOUNTAIN JR GAIUS GILLMAN, THEIL JEREMY ALFRED, Uzoh, Cyprian Emeka, Fountain, Jr., Gaius Gillman, Theil, Jeremy Alfred
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

Representative techniques and devices, including process steps may be employed to mitigate undesired dishing in conductive interconnect structures and erosion of dielectric bonding surfaces. For example, an embedded layer may be added to the dished or eroded surface to eliminate unwanted dishing or voids and to form a planar bonding surface. Additional techniques and devices, including process steps may be employed to form desired openings in conductive interconnect structures, where the openings can have a predetermined or desired volume relative to the volume of conductive material of the interconnect structures. Each of these techniques, devices, and processes can provide for the use of larger diameter, larger volume, or mixed-sized conductive interconnect structures at the bonding surface of bonded dies and wafers.

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Номер записи: 30
07-07-2020 дата публикации

Processing stacked substrates

Номер: US0010707087B2
Автор: Cyprian Emeka Uzoh, Guilian Gao, UZOH CYPRIAN EMEKA, GAO GUILIAN, Uzoh, Cyprian Emeka, Gao, Guilian
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

Representative implementations provide techniques for processing integrated circuit (IC) dies and related devices, in preparation for stacking and bonding the devices. The disclosed techniques provide removal of processing residue from the device surfaces while protecting the underlying layers. One or more sacrificial layers may be applied to a surface of the device during processing to protect the underlying layers. Processing residue is attached to the sacrificial layers instead of the device, and can be removed with the sacrificial layers.

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Номер записи: 31
18-05-2021 дата публикации

3D IC method and device

Номер: US0011011418B2
Автор: Paul M. Enquist, Gaius Gillman Fountain, Jr., Qin-Yi Tong, ENQUIST PAUL M, FOUNTAIN JR GAIUS GILLMAN, TONG QIN-YI, Enquist, Paul M., Fountain, Jr., Gaius Gillman, Tong, Qin-Yi
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC, INVENSAS BONDING TECHNOLOGIES, INC.

A method of three-dimensionally integrating elements such as singulated die or wafers and an integrated structure having connected elements such as singulated dies or wafers. Either or both of the die and wafer may have semiconductor devices formed therein. A first element having a first contact structure is bonded to a second element having a second contact structure. First and second contact structures can be exposed at bonding and electrically interconnected as a result of the bonding. A via may be etched and filled after bonding to expose and form an electrical interconnect to interconnected first and second contact structures and provide electrical access to this interconnect from a surface.

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Номер записи: 32
10-08-2021 дата публикации

Multi-metal contact structure in microelectronic component

Номер: US0011088099B2
Автор: Rajesh Katkar, Cyprian Emeka Uzoh, KATKAR RAJESH, UZOH CYPRIAN EMEKA, Katkar, Rajesh, Uzoh, Cyprian Emeka
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC, Invensas Bonding Technologies Inc.

A first conductive material having a first hardness is disposed within a recess or opening of a microelectronic component, in a first preselected pattern, and forms a first portion of an interconnect structure. A second conductive material having a second hardness different from the first hardness is disposed within the recess or opening in a second preselected pattern and forms a second portion of the interconnect structure.

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Номер записи: 33
19-06-2018 дата публикации

Bonded structures

Номер: US0010002844B1
Автор: Liang Wang, Rajesh Katkar, Javier A. DeLaCruz, Arkalgud R. Sitaram, WANG LIANG, KATKAR RAJESH, DELACRUZ JAVIER A, SITARAM ARKALGUD R, Wang, Liang, Katkar, Rajesh, DeLaCruz, Javier A., Sitaram, Arkalgud R.
Принадлежит: INVENSAS BONDING TECHNOLOGIES, INC., INVENSAS BONDING TECH INC

A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.

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Номер записи: 34
29-12-2020 дата публикации

Bonded structures

Номер: US0010879210B2
Автор: Paul M. Enquist, Liang Wang, Rajesh Katkar, Javier A. DeLaCruz, Arkalgud R. Sitaram, ENQUIST PAUL M, WANG LIANG, KATKAR RAJESH, DELACRUZ JAVIER A, SITARAM ARKALGUD R, Enquist, Paul M., Wang, Liang, Katkar, Rajesh, DeLaCruz, Javier A., Sitaram, Arkalgud R.
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

A bonded structure can include a first element having a first interface feature and a second element having a second interface feature. The first interface feature can be bonded to the second interface feature to define an interface structure. A conductive trace can be disposed in or on the second element. A bond pad can be provided at an upper surface of the first element and in electrical communication with the conductive trace. An integrated device can be coupled to or formed with the first element or the second element.

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Номер записи: 35
20-04-2021 дата публикации

Die processing

Номер: US0010985133B2
Автор: Cyprian Emeka Uzoh, UZOH CYPRIAN EMEKA, Uzoh, Cyprian Emeka
Принадлежит: INVENSAS BONDING TECHNOLOGIES, INC., INVENSAS BONDING TECH INC

Representative implementations provide techniques and systems for processing integrated circuit (IC) dies. Dies being prepared for intimate surface bonding (to other dies, to substrates, to another surface, etc.) may be processed with a minimum of handling, to prevent contamination of the surfaces or the edges of the dies. The techniques include processing dies while the dies are on a dicing sheet or other device processing film or surface. Systems include integrated cleaning components arranged to perform multiple cleaning processes simultaneously.

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Номер записи: 36
29-09-2020 дата публикации

Low temperature bonded structures

Номер: US0010790262B2
Автор: Cyprian Emeka Uzoh, Jeremy Alfred Theil, Liang Wang, Rajesh Katkar, Guilian Gao, Laura Wills Mirkarimi, UZOH CYPRIAN EMEKA, THEIL JEREMY ALFRED, WANG LIANG, KATKAR RAJESH, GAO GUILIAN, MIRKARIMI LAURA WILLS, Uzoh, Cyprian Emeka, Theil, Jeremy Alfred, Wang, Liang, Katkar, Rajesh, Gao, Guilian, Mirkarimi, Laura Wills
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

Devices and techniques including process steps make use of recesses in conductive interconnect structures to form reliable low temperature metallic bonds. A fill layer is deposited into the recesses prior to bonding. First conductive interconnect structures are bonded at ambient temperatures to second metallic interconnect structures using direct bonding techniques, with the fill layers in the recesses in one or both of the first and second interconnect structures.

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Номер записи: 37
04-12-2018 дата публикации

3D IC method and device

Номер: US0010147641B2
Автор: Paul M. Enquist, Gaius Gillman Fountain, Jr., Qin-Yi Tong, ENQUIST PAUL M, FOUNTAIN JR GAIUS GILLMAN, TONG QIN-YI, Enquist, Paul M., Fountain, Jr., Gaius Gillman, Tong, Qin-Yi
Принадлежит: INVENSAS BONDING TECHNOLOGIES, INC., INVENSAS BONDING TECH INC

A method of three-dimensionally integrating elements such as singulated die or wafers and an integrated structure having connected elements such as singulated dies or wafers. Either or both of the die and wafer may have semiconductor devices formed therein. A first element having a first contact structure is bonded to a second element having a second contact structure. First and second contact structures can be exposed at bonding and electrically interconnected as a result of the bonding. A via may be etched and filled after bonding to expose and form an electrical interconnect to interconnected first and second contact structures and provide electrical access to this interconnect from a surface.

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Номер записи: 38
24-12-2019 дата публикации

Multi-metal contact structure

Номер: US0010515913B2
Автор: Rajesh Katkar, Cyprian Emeka Uzoh, KATKAR RAJESH, UZOH CYPRIAN EMEKA, Katkar, Rajesh, Uzoh, Cyprian Emeka
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

A first conductive material having a first hardness is disposed within a recess or opening of a microelectronic component, in a first preselected pattern, and forms a first portion of an interconnect structure. A second conductive material having a second hardness different from the first hardness is disposed within the recess or opening in a second preselected pattern and forms a second portion of the interconnect structure.

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Номер записи: 39
22-09-2020 дата публикации

Interface structures and methods for forming same

Номер: US0010784191B2
Автор: Shaowu Huang, Belgacem Haba, Javier A. DeLaCruz, HUANG SHAOWU, HABA BELGACEM, DELACRUZ JAVIER A, Huang, Shaowu, Haba, Belgacem, DeLaCruz, Javier A.
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC, INVENSAS BONDING TECHNOLOGIES, INC.

A stacked and electrically interconnected structure is disclosed. The structure can comprise a first element and a second element directly bonded to the first element along a bonding interface without an intervening adhesive. A filter circuit can be integrally formed between the first and second elements along the bonding interface.

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Номер записи: 40
14-07-2020 дата публикации

Die processing

Номер: US0010714449B2
Автор: Cyprian Emeka Uzoh, UZOH CYPRIAN EMEKA, Uzoh, Cyprian Emeka
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

Representative implementations provide techniques and systems for processing integrated circuit (IC) dies. Dies being prepared for intimate surface bonding (to other dies, to substrates, to another surface, etc.) may be processed with a minimum of handling, to prevent contamination of the surfaces or the edges of the dies. The techniques include processing dies while the dies are on a dicing sheet or other device processing film or surface. Systems include integrated cleaning components arranged to perform multiple cleaning processes simultaneously.

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Номер записи: 41
11-05-2021 дата публикации

Bonded structures

Номер: US0011004757B2
Автор: Rajesh Katkar, Laura Wills Mirkarimi, Bongsub Lee, Gaius Gillman Fountain, Jr., Cyprian Emeka Uzoh, KATKAR RAJESH, MIRKARIMI LAURA WILLS, LEE BONGSUB, FOUNTAIN JR GAIUS GILLMAN, UZOH CYPRIAN EMEKA, Katkar, Rajesh, Mirkarimi, Laura Wills, Lee, Bongsub, Fountain, Jr., Gaius Gillman, Uzoh, Cyprian Emeka
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC, INVENSAS BONDING TECHNOLOGIES, INC.

A bonded structure is disclosed. The bonded structure includes a first element and a second element that is bonded to the first element along a bonding interface. The bonding interface has an elongate conductive interface feature and a nonconductive interface feature. The bonded structure also includes an integrated device that is coupled to or formed with the first element or the second element. The elongate conductive interface feature has a recess through a portion of a thickness of the elongate conductive interface feature. A portion of the nonconductive interface feature is disposed in the recess.

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Номер записи: 42
28-07-2020 дата публикации

Techniques for processing devices

Номер: US0010727219B2
Автор: Cyprian Emeka Uzoh, Laura Wills Mirkarimi, Guilian Gao, Gaius Gillman Fountain, Jr., UZOH CYPRIAN EMEKA, MIRKARIMI LAURA WILLS, GAO GUILIAN, FOUNTAIN JR GAIUS GILLMAN, Uzoh, Cyprian Emeka, Mirkarimi, Laura Wills, Gao, Guilian, Fountain, Jr., Gaius Gillman
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

Representative techniques provide process steps for forming a microelectronic assembly, including preparing microelectronic components such as dies, wafers, substrates, and the like, for bonding. One or more surfaces of the microelectronic components are formed and prepared as bonding surfaces. The microelectronic components are stacked and bonded without adhesive at the prepared bonding surfaces.

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Номер записи: 43
15-10-2019 дата публикации

Systems and methods for efficient transfer of semiconductor elements

Номер: US0010446532B2
Автор: Cyprian Emeka Uzoh, Paul M. Enquist, Gaius Gillman Fountain, Jr., UZOH CYPRIAN EMEKA, ENQUIST PAUL M, FOUNTAIN JR GAIUS GILLMAN, Uzoh, Cyprian Emeka, Enquist, Paul M., Fountain, Jr., Gaius Gillman
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC, INVENSAS BONDING TECHNOLOGIES, INC.

Systems and methods for efficient transfer of elements are disclosed. A film which supports a plurality of diced integrated device dies can be provided. The plurality of diced integrated device dies can be disposed adjacent one another along a surface of the film. The film can be positioned adjacent the support structure such that the surface of the film faces a support surface of the support structure. The film can be selectively positioned laterally relative to the support structure such that a selected first die is aligned with a first location of the support structure. A force can be applied in a direction nonparallel to the surface of the film to cause the selected first die to be directly transferred from the film to the support structure.

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Номер записи: 44
17-12-2019 дата публикации

Seal for microelectronic assembly

Номер: US0010508030B2
Автор: Rajesh Katkar, Liang Wang, Cyprian Emeka Uzoh, Shaowu Huang, Guilian Gao, Ilyas Mohammed, KATKAR RAJESH, WANG LIANG, UZOH CYPRIAN EMEKA, HUANG SHAOWU, GAO GUILIAN, MOHAMMED ILYAS, Katkar, Rajesh, Wang, Liang, Uzoh, Cyprian Emeka, Huang, Shaowu, Gao, Guilian, Mohammed, Ilyas
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

Representative implementations of techniques and devices provide seals for sealing the joints of bonded microelectronic devices as well as bonded and sealed microelectronic assemblies. Seals are disposed at joined surfaces of stacked dies and wafers to seal the joined surfaces. The seals may be disposed at an exterior periphery of the bonded microelectronic devices or disposed within the periphery using the various techniques.

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Номер записи: 45
06-07-2021 дата публикации

Bonding surfaces for microelectronics

Номер: US0011056348B2
Автор: Jeremy Alfred Theil, THEIL JEREMY ALFRED, Theil, Jeremy Alfred
Принадлежит: INVENSAS BONDING TECHNOLOGIES, INC., INVENSAS BONDING TECH INC, Invensas Bonding Technologies, Inc.

Improved bonding surfaces for microelectronics are provided. An example method of protecting a dielectric surface for direct bonding during a microelectronics fabrication process includes overfilling cavities and trenches in the dielectric surface with a temporary filler that has an approximately equal chemical and mechanical resistance to a chemical-mechanical planarization (CMP) process as the dielectric bonding surface. The CMP process is applied to the temporary filler to flatten the temporary filler down to the dielectric bonding surface. The temporary filler is then removed with an etchant that is selective to the temporary filler, but nonreactive toward the dielectric surface and toward inner surfaces of the cavities and trenches in the dielectric bonding surface. Edges of the cavities remain sharp, which minimizes oxide artifacts, strengthens the direct bond, and reduces the bonding seam.

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Номер записи: 46
04-06-2019 дата публикации

Method for low temperature bonding and bonded structure

Номер: US0010312217B2
Автор: Qin-Yi Tong, Gaius Gillman Fountain, Jr., Paul M. Enquist, TONG QIN-YI, FOUNTAIN JR GAIUS GILLMAN, ENQUIST PAUL M, Tong, Qin-Yi, Fountain, Jr., Gaius Gillman, Enquist, Paul M.
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC, INVENSAS BONDING TECHNOLOGIES, INC.

A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. The method may also include removing by-products of interface polymerization to prevent a reverse polymerization reaction to allow room temperature chemical bonding of materials such as silicon, silicon nitride and SiO2. The surfaces to be bonded are polished to a high degree of smoothness and planarity. VSE may use reactive ion etching or wet etching to slightly etch the surfaces being bonded. The surface roughness and planarity are not degraded and may be enhanced by the VSE process. The etched surfaces may be rinsed in solutions such as ammonium hydroxide or ammonium fluoride to promote the formation of desired bonding species on the surfaces.

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Номер записи: 47
30-03-2021 дата публикации

DBI to Si bonding for simplified handle wafer

Номер: US0010964664B2
Автор: Chandrasekhar Mandalapu, Gaius Gillman Fountain, Jr., Guilian Gao, MANDALAPU CHANDRASEKHAR, FOUNTAIN JR GAIUS GILLMAN, GAO GUILIAN, Mandalapu, Chandrasekhar, Fountain, Jr., Gaius Gillman, Gao, Guilian
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

Devices and techniques include process steps for preparing various microelectronic components for bonding, such as for direct bonding without adhesive. The processes include providing a first bonding surface on a first surface of the microelectronic components, bonding a handle to the prepared first bonding surface, and processing a second surface of the microelectronic components while the microelectronic components are gripped at the handle. In some embodiments, the processes include removing the handle from the first bonding surface, and directly bonding the microelectronic components at the first bonding surface to other microelectronic components.

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Номер записи: 48
23-04-2019 дата публикации

Increased contact alignment tolerance for direct bonding

Номер: US0010269708B2
Автор: Paul M. Enquist, Gaius Gillman Fountain, Jr., Javier A. DeLaCruz, ENQUIST PAUL M, FOUNTAIN JR GAIUS GILLMAN, DELACRUZ JAVIER A, Enquist, Paul M., Fountain, Jr., Gaius Gillman, DeLaCruz, Javier A.
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC, INVENSAS BONDING TECHNOLOGIES, INC.

A bonded device structure including a first substrate having a first set of conductive contact structures, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the contact structures on the first substrate, a second substrate having a second set of conductive contact structures, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the contact structures on the second substrate, and a contact-bonded interface between the first and second set of contact structures formed by contact bonding of the first non-metallic region to the second non-metallic region. The contact structures include elongated contact features, such as individual lines or lines connected in a grid, that are non-parallel on the two substrates, making contact at intersections. Alignment tolerances are thus improved while minimizing dishing and parasitic capacitance.

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Номер записи: 49
18-05-2021 дата публикации

Direct-bonded optoelectronic interconnect for high-density integrated photonics

Номер: US0011011503B2
Автор: Liang Wang, Rajesh Katkar, WANG LIANG, KATKAR RAJESH, Wang, Liang, Katkar, Rajesh
Принадлежит: INVENSAS BONDING TECHNOLOGIES, INC., INVENSAS BONDING TECH INC, Invensas Bonding Technologies, Inc.

Direct-bonded optoelectronic interconnects for high-density integrated photonics are provided. A combined electrical and optical interconnect enables direct-bonding of fully-processed optoelectronic dies or wafers to wafers with optoelectronic driver circuitry. The photonic devices may be III-V semiconductor devices. Direct-bonding to silicon or silicon-on-insulator (SOI) wafers enables the integration of photonics with high-density CMOS and other microelectronics packages. Each bonding surface has an optical window to be coupled by direct-bonding. Coplanar electrical contacts lie to the outside, or may circumscribe the respective optical windows and are also direct-bonded across the interface using metal-to-metal direct-bonding, without interfering with the optical windows. Direct hybrid bonding can accomplish both optical and electrical bonding in one overall operation, to mass-produce mLED video displays. The adhesive-free dielectric-to-dielectric direct bonding and solder-free metal-to-metal ...

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Номер записи: 50
29-12-2020 дата публикации

Stacked dies and methods for forming bonded structures

Номер: US0010879226B2
Автор: Cyprian Emeka Uzoh, Arkalgud R. Sitaram, Paul Enquist, UZOH CYPRIAN EMEKA, SITARAM ARKALGUD R, ENQUIST PAUL, Uzoh, Cyprian Emeka, Sitaram, Arkalgud R., Enquist, Paul
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC, INVENSAS BONDING TECHNOLOGIES, INC.

In various embodiments, a method for forming a bonded structure is disclosed. The method can comprise mounting a first integrated device die to a carrier. After mounting, the first integrated device die can be thinned. The method can include providing a first layer on an exposed surface of the first integrated device die. At least a portion of the first layer can be removed. A second integrated device die can be directly bonded to the first integrated device die without an intervening adhesive.

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Номер записи: 51
28-01-2020 дата публикации

Bonded structures

Номер: US0010546832B2
Автор: Liang Wang, Rajesh Katkar, Javier A. DeLaCruz, Arkalgud R. Sitaram, WANG LIANG, KATKAR RAJESH, DELACRUZ JAVIER A, SITARAM ARKALGUD R, Wang, Liang, Katkar, Rajesh, DeLaCruz, Javier A., Sitaram, Arkalgud R.
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC, INVENSAS BONDING TECHNOLOGIES, INC.

A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.

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Номер записи: 52
12-02-2019 дата публикации

Stacked dies and methods for forming bonded structures

Номер: US0010204893B2
Автор: Cyprian Emeka Uzoh, Arkalgud R. Sitaram, Paul Enquist, UZOH CYPRIAN EMEKA, SITARAM ARKALGUD R, ENQUIST PAUL, Uzoh, Cyprian Emeka, Sitaram, Arkalgud R., Enquist, Paul
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC, INVENSAS BONDING TECHNOLOGIES, INC.

In various embodiments, a method for forming a bonded structure is disclosed. The method can comprise mounting a first integrated device die to a carrier. After mounting, the first integrated device die can be thinned. The method can include providing a first layer on an exposed surface of the first integrated device die. At least a portion of the first layer can be removed. A second integrated device die can be directly bonded to the first integrated device die without an intervening adhesive.

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Номер записи: 53
06-10-2020 дата публикации

Die tray with channels

Номер: US0010796936B2
Автор: Cyprian Emeka Uzoh, UZOH CYPRIAN EMEKA, Uzoh, Cyprian Emeka
Принадлежит: Invensas Bonding Technologies, Inc., INVENSAS BONDING TECH INC

Representative implementations of devices and techniques provide a device and a technique for processing integrated circuit (IC) dies. The device comprises a die tray (such as a pick and place tray, for example) for holding the dies during processing. The die tray may include an array of pockets sized to hold individual dies. The technique can include loading dies on the die tray, cleaning the top and bottom surfaces of the dies, and ashing and activating both surfaces of the dies while on the die tray, eliminating the need to turn the dies over during processing.

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Номер записи: 54