MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor,and a biological sensor. 1. A monolithically integrated multi-sensor (MIMs) comprising: a microphone configured to measure an parameter; and', 'a first MEMs sensor configured to measure a first parameter; and', 'a second MEMs sensor configured to measure a second parameter wherein the the first parameter, the second parameter and the parameter measured by the microphone are different and wherein the microphone, the first MEMs sensor, and the second MEMs sensor are formed on or in a single semiconductor substrate., 'a first integrated circuit comprising2. The MIMS of wherein at least one of the microphone claim 1 , the first MEMs sensor claim 1 , or the second MEMs sensor is exposed to an external environment and wherein at least one of the microphone claim 1 , the first MEMs sensor claim 1 , or the second MEMs sensor is sealed from the external environment.3. The MIMS of wherein at least one layer of the first integrated circuit is shared in common with the microphone claim 1 , the first MEMs sensor claim 1 , and the second MEMs sensor and wherein at least a portion of the at least one layer is etched.4. The MIMS of wherein at least one layer of ...

SYSTEM HAVING AN AREAL DENSITY OF DEVICES AND/OR ELECTRO-MECHANICAL MICROELECTROMECHANICAL INCREASED

Système nanoélectronique comportant n dispositifs microélectromécaniques et/ou nanoélectromécaniques disposés sur un support de connexion destiné à connecter électriquement les n dispositifs, chacun des dispositifs comportant une zone d'interaction (2), au moins un ancrage mécanique (X) et une première borne (O), une deuxième borne (c) et une troisième borne (a),, la disposition relative des première (O), deuxième (c) et troisième (a) bornes, de la zone d'ancrage (X) et de la zone d'interaction (2) étant identiques ou similaires pour les n capteurs, la première borne (O) de chaque dispositif étant destinée à récupérer un signal émis par chaque dispositif représentatif de l'état de la zone d'interaction (2). Au moins une partie des dispositifs est disposée de telle sorte que l'emplacement géométrique de la première borne (O) d'un des dispositifs adjacents est identique à l'emplacement géométrique de la première borne dudit autre dispositif adjacent, lesdites premières bornes étant confondues ...

System with an increased surface density of microelectromechanical or nanoelectromechanical devices

A nanoelectronic system comprised of n microelectromechanical or nanoelectromechanical devices arranged on a connection support to electrically connect the n devices, each device with an interaction area, at least one mechanical anchor and a first terminal, a second terminal and a third terminal, the relative arrangement of the first, second and third terminals, the anchor area and the interaction area being identical or similar for the n sensors, the first terminal of each device being intended to recover a signal emitted by each representative device of the interaction area state. At least part of the devices are arranged in such a way that the geometric location of the first terminal of one of the adjacent devices is identical to the geometric location of the first terminal of said other adjacent device, the first terminals being coincident.

MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

Transducer module and electron device thereof

本实用新型公开涉及换能器模块及其电子装置。换能器模块(10)包括：支持衬底(23)，具有第一侧(23a)和第二侧(23b)；盖(27)，在支持衬底的第一侧上方延伸并且与支持衬底一起限定内部彼此隔离的第一室(108)和第二室(109)；第一换能器(1)，位于第一室(8)中；第二换能器(42)，位于第二使(18)中；以及控制芯片(22)，至少部分地在第一室和/或第二室中延伸，并且功能性地耦合至第一换能器和第二换能器，用于在使用中分别接收由第一和第二换能器转换的信号。本实用新型具有成本低、空间占用小的优点。

Transportation device having a monolithically integrated multi-sensor device on a semiconductor substrate and method therefor

A transportation device is provided having multiple sensors configured to detect and measure different parameters of interest. The transportation device includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The transportation device couples a first parameter to be measured directly to the direct sensor. Conversely, the transportation device can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the transportation device by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors such as a microphone, an accelerometer, and a temperature sensor to reduce cost, complexity, simplify assembly, while increasing performance.

회로 플랫폼에 대한 측부 표면 접점의 결합

... 장치는 일반적으로 마이크로전자기계 시스템 구성요소에 관한 것이다. 그러한 장치에서, 마이크로전자기계 시스템 구성요소는 하부 표면, 상부 표면, 제1 측부 표면들 및 제2 측부 표면들을 갖는다. 제1 측부 표면들의 표면적이 제2 측부 표면들의 표면적보다 크다. 마이크로전자기계 시스템 구성요소는 제1 측부 표면들 중 제1 측부 표면에 부착되어 제1 측부 표면으로부터 멀어지게 연장되는 복수의 와이어 본드 와이어들을 갖는다. 와이어 본드 와이어들은 자립형이고 제1 측부 표면들 중 제1 측부 표면에 대해 외팔보식으로 지지된다.

Coupling of side surface contacts to a circuit platform

An apparatus relates generally to a microelectromechanical system component. In such an apparatus, the microelectromechanical system component has a lower surface, an upper surface, first side surfaces, and second side surfaces. Surface area of the first side surfaces is greater than surface area of the second side surfaces. The microelectromechanical system component has a plurality of wire bond wires attached to and extending away from a first side surface of the first side surfaces. The wire bond wires are self-supporting and cantilevered with respect to the first side surface of the first side surfaces.

SYSTEM WITH AN INCREASED SURFACE DENSITY OF MICROELECTROMECHANICAL OR NANOELECTROMECHANICAL DEVICES

A nanoelectronic system comprised of n microelectromechanical or nanoelectromechanical devices arranged on a connection support to electrically connect the n devices, each device with an interaction area, at least one mechanical anchor and a first terminal, a second terminal and a third terminal, the relative arrangement of the first, second and third terminals, the anchor area and the interaction area being identical or similar for the n sensors, the first terminal of each device being intended to recover a signal emitted by each representative device of the interaction area state. At least part of the devices are arranged in such a way that the geometric location of the first terminal of one of the adjacent devices is identical to the geometric location of the first terminal of said other adjacent device, the first terminals being coincident. 1. A microelectronic system comprised of n microelectromechanical or nanoelectromechanical devices , so-called devices , n being greater than or equal to 2 , arranged on a connection support configured to electrically connect the n devices , each device comprising an interaction area , at least one mechanical anchor , at least one first electric terminal configured to recover a signal emitted by each device representative of the state of the interaction area , at least a second electrical terminal and a third electrical terminal , each terminal having a given function , in which , amongst the n devices , at least some of the devices is arranged in such a way that the geometric location of at least one of the terminals among the first , second and third terminals of one of the adjacent devices is identical to the geometric location of the other terminal of said other adjacent device having the same function , said terminals of said two adjacent devices being coincident , in which , among the n devices , at least some of the devices is arranged so that the mechanical anchorages of the two adjacent devices are coincident , the ...

MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor. 1. A monolithically integrated multi-sensor (MIMs) comprising: a humidity sensor configured to measure a parameter; and', 'a first MEMs sensor configured to measure a first parameter; and', 'a second MEMs sensor configured to measure a second parameter wherein the first parameter, the second parameter and the parameter measured by the humidity sensor are different and wherein the humidity sensor, the first MEMs sensor, and the second MEMs sensor are formed on or in a single semiconductor substrate., 'a first integrated circuit comprising2. The MIMS of wherein at least one of the humidity sensor claim 1 , the first MEMs sensor claim 1 , or the second MEMs sensor is exposed to an external environment and wherein at least one of the humidity sensor claim 1 , the first MEMs sensor claim 1 , or the second MEMs sensor is sealed from the external environment.3. The MIMS of wherein at least one layer of the first integrated circuit is shared in common with the humidity sensor claim 1 , the first MEMs sensor claim 1 , and the second MEMs sensor and wherein at least a portion of the at least one layer is etched.4. The MIMS of ...

Coupling of side surface contacts to a circuit platform

An apparatus relates generally to a microelectromechanical system component. In such an apparatus, the microelectromechanical system component has a lower surface, an upper surface, first side surfaces, and second side surfaces. Surface area of the first side surfaces is greater than surface area of the second side surfaces. The microelectromechanical system component has a plurality of wire bond wires attached to and extending away from a first side surface of the first side surfaces. The wire bond wires are self-supporting and cantilevered with respect to the first side surface of the first side surfaces.

DISTRIBUTED SENSOR SYSTEM

A distributed sensor system is disclosed that provides spatial and temporal data in an operating environment. The distributed sensor nodes can be coupled together to form a distributed sensor system. For example, a distributed sensor system comprises a collection of Sensor Nodes (SN) that are physically coupled and are able to collect data about the environment in a distributed manner. For example, a first sensor node and a second sensor node is formed respectively in a first region and a second region of the semiconductor substrate. A flexible interconnect is formed overlying the semiconductor substrate and couples the first sensor node to the second sensor node. A portion of the semiconductor substrate is removed by etching beneath the flexible interconnect such that the distributed sensor system has multiple degrees of freedom that support following surface contours or sudden changes of direction. 1. A distributed sensor system comprising:a first sensor node formed on or in a first region of a semiconductor substrate;a second sensor node formed on or in a second region the semiconductor substrate wherein the first and second sensor nodes are formed at the same time on or in the semiconductor substrate;a first flexible interconnect coupling the first sensor node and the second sensor node wherein the first flexible interconnect is formed overlying the semiconductor substrate, wherein a portion of the semiconductor substrate is removed thereby separating the first region from the second region of the semiconductor substrate such that the first flexible interconnect couples the first region to the second region of the semiconductor substrate.2. The distributed sensor system of wherein the semiconductor substrate comprises:a silicon on insulator (SOI) substrate;a buried oxide layer (BOX) overlying the SOI substrate; anda single crystal silicon layer.3. The distributed sensor system of wherein the first and second sensor nodes are formed in the single crystal silicon ...

COUPLING OF SIDE SURFACE CONTACTS TO A CIRCUIT PLATFORM

MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor. 1 a first sensor configured to measure a first parameter; and', 'a second sensor configured to measure a second parameter; and', 'a third sensor configured to measure a third parameter wherein the first, second, and third sensors are configured to measure different parameters, wherein the first, second, and third sensors are formed on or in a single semiconductor substrate, wherein the first, second, and third sensors share a common layer, and wherein the common layer is configured to move in at least one sensor, and wherein the common layer does not move in at least one sensor., 'an integrated circuit includes three or more sensors wherein the integrated circuit comprises. A monolithically integrated multi-sensor (MIMs) comprising: This application is a continuation of U.S. application Ser. No. 15/893,649 filed on 2018 Feb. 11 the disclosure of which is hereby incorporated by reference in it entirety. Application Ser. No. 15/893,649 is a continuation of U.S. application Ser. No. 15/049,339 filed on Feb. 22, 2016 the disclosure of which is hereby incorporated herein by reference in its entirety. Application Ser. No. 15/ ...

Multi-chamber transducer module, apparatus including the multi-chamber transducer module and method of manufacturing the multi-chamber transducer module

A transducer module, comprising: a supporting substrate, having a first side and a second side; a cap, which extends over the first side of the supporting substrate and defines therewith a first chamber and a second chamber internally isolated from one another; a first transducer in the first chamber; a second transducer in the second chamber; and a control chip, which extends at least partially in the first chamber and/or in the second chamber and is functionally coupled to the first and second transducers for receiving, in use, the signals transduced by the first and second transducers.

MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor. 1. A monolithically integrated multi-sensor (MIMs) comprising: a pressure sensor configured to measure a parameter; and', 'a first MEMs sensor configured to measure a first parameter; and', 'a second MEMs sensor configured to measure a second parameter wherein the first parameter, the second parameter and the parameter measured by the pressure sensor are different and wherein the pressure sensor, the first MEMs sensor, and the second MEMs sensor are formed on or in a single semiconductor substrate., 'a first integrated circuit comprising2. The MIMS of wherein at least one of the pressure sensor claim 1 , the first MEMs sensor claim 1 , or the second MEMs sensor is exposed to an external environment and wherein at least one of the pressure sensor claim 1 , the first MEMs sensor claim 1 , or the second MEMs sensor is sealed from the external environment.3. The MIMS of wherein at least one layer of the first integrated circuit is shared in common with the pressure sensor claim 1 , the first MEMs sensor claim 1 , and the second MEMs sensor and wherein at least a portion of the at least one layer is etched.4. The MIMS of ...

CELL PHONE HAVING A MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR

A cell phone is provided having multiple sensors configured to detect and measure different parameters of interest. The cell phone includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The cell phone couples a first parameter to be measured directly to the direct sensor. Conversely, the cell phone can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the cell phone by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors such as a microphone, an accelerometer, and a temperature sensor to reduce cost, complexity, simplify assembly, while increasing performance.

DISTRIBUTED SENSOR SYSTEM

A distributed sensor system is disclosed that provides spatial and temporal data in an operating environment. The distributed sensor nodes can be coupled together to form a distributed sensor system. For example, a distributed sensor system comprises a collection of Sensor Nodes (SN) that are physically coupled and are able to collect data about the environment in a distributed manner. An example of a distributed sensor system comprises a first sensor node and a second sensor node. Each sensor node has a plurality of sensors or a MIMS device. Each sensor node can also include electronic circuitry or a power source. A joint region is coupled between a first flexible interconnect region and a second flexible interconnect region. The first sensor node is coupled to the first flexible interconnect region. Similarly, the second sensor node is coupled to the second flexible interconnect region.

Multi-chamber transducer module, apparatus including the multi-chamber transducer module and method of manufacturing the multi-chamber transducer module

MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor. 1. A monolithically integrated multi-sensor (MIMS) having three or more sensors the MIMS comprising:a first MEMS sensor configured to measure a first parameter;a second MEMS sensor configured to measure a second parameter;a third sensor configured to measure a third parameter wherein the first, second, and third parameters are different, wherein the first, second, and third sensors are formed on or in a single semiconductor substrate using a monolithic semiconductor process, and wherein the a layer of the monolithic semiconductor process is common to the first, second, and third sensors.2. The MIMS of wherein the layer forms a static structural component in at least one of the first claim 1 , second claim 1 , or third sensors and wherein the layer forms a dynamic structural component in at least one of the first claim 1 , second claim 1 , or third sensors.3. The MIMS of wherein the layer is configured to form one or more pillars or one or more walls to support the static structural components for improved mechanical strength.4. The MIMS of wherein the dynamic structural component is a proof mass or a suspension spring.5 ...

Monolithically integrated multi-sensor device on a semiconductor substrate and method therefor

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

Coupling side surface contacts to circuit platform

Dual-Layer Micro-ribbon MEMS Light Modulator

An optical system including a dual-layer microelectromechanical systems (MEMS) device, and methods of fabricating and operating the same are disclosed. Generally, the MEMS device includes a substrate having an upper surface; a top modulating layer including a number of light modulating micro-ribbons, each micro-ribbon supported above and separated from the upper surface of the substrate by spring structures in at least one lower actuating layer; and a mechanism for moving one or more of the micro-ribbons relative to the upper surface and/or each other. The spring structures are operable to enable the light modulating micro-ribbons to move continuously and vertically relative to the upper surface of the substrate while maintaining the micro-ribbons substantially parallel to one another and the upper surface of the substrate. The micro-ribbons can be reflective, transmissive, partially reflective/transmissive, and the device is operable to modulate a phase and/or amplitude of light incident ...

Monolithically integrated multi-sensor device on a semiconductor substrate and method therefor

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

Monolithically integrated multi-sensor device on a semiconductor substrate and method therefor

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor. 1. A monolithically integrated multi-sensor (MIMs) comprising: an inertial sensor;', 'a first micro-electromechanical system (MEMS) sensor;', 'a second MEMS sensor wherein the inertial sensor, the first MEMS sensor, and the second MEMS sensor are formed on a single semiconductor substrate and wherein the inertial sensor is sealed from an external environment by one or more layers of the monolithic integrated circuit process., 'an integrated circuit formed using a monolithic integrated circuit process comprising2. The monolithically integrated multi-sensor (MIMs) of wherein the inertial sensor claim 1 , the first MEMS sensor claim 1 , and the second MEMS sensor each measure a different parameter.3. The monolithically integrated multi-sensor (MIMs) of further including at least a third MEMS sensor wherein the inertial sensor claim 1 , the first MEMS sensor claim 1 , the second MEMS sensor claim 1 , and the third MEMS sensor measures each measure a different parameter.4. The monolithically integrated multi-sensor (MIMs) of wherein the inertial sensor is one of an accelerometer or a gyroscope.5. The monolithically ...

MULTI-CHAMBER TRANSDUCER MODULE, APPARATUS INCLUDING THE MULTI-CHAMBER TRANSDUCER MODULE AND METHOD OF MANUFACTURING THE MULTI-CHAMBER TRANSDUCER MODULE

A transducer module, comprising: a supporting substrate, having a first side and a second side; a cap, which extends over the first side of the supporting substrate and defines therewith a first chamber and a second chamber internally isolated from one another; a first transducer in the first chamber; a second transducer in the second chamber; and a control chip, which extends at least partially in the first chamber and/or in the second chamber and is functionally coupled to the first and second transducers for receiving, in use, the signals transduced by the first and second transducers. 1. A transducer module , comprising:a supporting substrate having a first side and a second side, first and second through vias extending from the first side to the second side;a conductive path at the second side of the supporting substrate, the conductive path coupled to the first and second through vias;a cap coupled to the first side of the supporting substrate to form a first chamber and a second chamber, the second chamber being internally isolated from the first chamber, the first through via being in the supporting substrate at the first chamber, the second through via being in the supporting substrate at the second chamber;a first sensor chip coupled to the first side of the supporting substrate in the first chamber, the first sensor chip integrating a first microelectromechanical (MEMS) transducer configured to detect a first environmental quantity and to generate a first transduced signal as a function of the first environmental quantity detected;a second sensor chip coupled to the first side of the supporting substrate in the second chamber, the second sensor chip integrating a second microelectromechanical (MEMS) transducer configured to detect a second environmental quantity and to generate a second transduced signal as a function of the second environmental quantity detected; anda control chip in the first chamber, the control chip being functionally coupled to the ...

DEVICE, METHOD AND COMPUTER-READABLE RECORDING MEDIUM FOR DETECTING EARTHQUAKE IN MEMS-BASED AUXILIARY SEISMIC OBSERVATION NETWORK

Provided are a device, method, and computer-readable recording medium for detecting an earthquake in a microelectromechanical system (MEMS)-based auxiliary seismic observation network. The method includes performing detrending of removing a moving average from original acceleration data received from single sensors of an MEMS-based auxiliary seismic observation network to preprocess the acceleration data, calculating a short-term average/long-term average (STA/LTA) value using a filter parameter value specified on the basis of the preprocessed acceleration data, generating an event occurrence message or event end message on the basis of the calculated STA/LTA value and transmitting the event occurrence message or event end message, when the event occurrence message is generated, calculating an earthquake probability through an earthquake detection deep learning model using the preprocessed acceleration data as an input, and analyzing noise by calculating a power spectral density (PSD) from ...

Wearable device having a monolithically integrated multi-sensor device on a semiconductor substrate and method therefor

A wearable device is provided having multiple sensors configured to detect and measure different parameters of interest. The wearable device includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The wearable device couples a first parameter to be measured directly to the direct sensor. Conversely, the wearable device can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the wearable device by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device.

Monolithically integrated multi-sensor device on a semiconductor substrate and method therefor

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

Monolithically integrated multi-sensor device on a semiconductor substrate and method therefor

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

DISTRIBUTED SENSOR SYSTEM

A distributed sensor system is disclosed that provides spatial and temporal data in an operating environment. The distributed sensor nodes can be coupled together to form a distributed sensor system. For example, a distributed sensor system comprises a collection of Sensor Nodes (SN) that are physically coupled and are able to collect data about the environment in a distributed manner. For example, a first sensor node and a second sensor node is formed respectively in a first region and a second region of the semiconductor substrate. A flexible interconnect is formed overlying the semiconductor substrate and couples the first sensor node to the second sensor node. A portion of the semiconductor substrate is removed by etching beneath the flexible interconnect such that the distributed sensor system has multiple degrees of freedom that support following surface contours or sudden changes of direction.

HIERARCHICAL MICRO ASSEMBLER SYSTEM

A method of manufacturing and using micro assembler systems are described. A method of manufacturing includes disposing a first plurality of electrodes above a first zone of the substrate, wherein the first plurality of electrodes has a first range of spacing. The method further includes disposing a second plurality of electrodes above a second zone of the substrate, wherein the second plurality of electrodes has a second range of spacing that is less than the first range of spacing. A method of using micro assembler systems includes disposing a mobile particle at least partially submersed in an assembly medium above a substrate, a first plurality of electrodes and a second plurality of electrodes. The method further includes conducting a field through individual electrodes of the first plurality of electrodes and the second plurality of electrodes to generate electrophoretic forces or dielectrophoretic forces on the mobile particle. 1. A method comprising:providing a substrate;disposing a first plurality of electrostatic potential presenting electrodes above a first zone of the substrate, wherein the first plurality of electrodes has a first range of spacing; anddisposing a second plurality of electrostatic potential presenting electrodes above a second zone of the substrate, wherein the second plurality of electrodes has a second range of spacing that is less than the first range of spacing.2. The method of claim 1 , further comprising:disposing a dielectric layer above the first plurality of electrostatic potential presenting electrodes and the second plurality of electrodes.3. The method of further comprising:disposing a transfer film above the first plurality of electrostatic potential presenting electrodes and the second plurality of electrostatic potential presenting electrodes, wherein the transfer film is detachable from the first plurality of electrostatic potential presenting electrodes and the second plurality of electrostatic potential presenting ...

MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor. 1. A monolithically integrated multi-sensor (MIMs) comprising: a first sensor configured to measure a first parameter;', 'a second sensor configured to measure a second parameter;', 'a third sensor configured to measure a third parameter;', 'a fourth sensor configured to measure a fourth parameter;', 'a fifth sensor configured to measure a fifth parameter; and', 'a sixth sensor configured to measure a sixth parameter wherein the first, second, and third parameters are different and wherein at least one of the first, second, third, fourth, fifth, or sixth sensors is a MEMs sensor., 'A first integrated circuit comprising2. The MIMS of further including a second integrated circuit having at least one sensor wherein the second integrated circuit is coupled to the first integrated circuit via conductive bumps or wirebonds.3. The MIMS of a third integrated circuit having control circuitry wherein the first integrated circuit is coupled to the first integrated circuit via conductive bumps or wirebonds.4. The MIMS of wherein at least one of the first claim 1 , second claim 1 , third claim 1 , fourth claim 1 , fifth claim 1 , or ...

Hierarchical micro assembler system

A method of manufacturing and using micro assembler systems are described. A method of manufacturing includes disposing a first plurality of electrodes above a first zone of the substrate, wherein the first plurality of electrodes has a first range of spacing. The method further includes disposing a second plurality of electrodes above a second zone of the substrate, wherein the second plurality of electrodes has a second range of spacing that is less than the first range of spacing. A method of using micro assembler systems includes disposing a mobile particle at least partially submersed in an assembly medium above a substrate, a first plurality of electrodes and a second plurality of electrodes. The method further includes conducting a field through individual electrodes of the first plurality of electrodes and the second plurality of electrodes to generate electrophoretic forces or dielectrophoretic forces on the mobile particle.

Distributed sensor system

A distributed sensor system is disclosed that provides spatial and temporal data in an operating environment. The distributed sensor nodes can be coupled together to form a distributed sensor system. For example, a distributed sensor system comprises a collection of Sensor Nodes (SN) that are physically coupled and are able to collect data about the environment in a distributed manner. An example of a distributed sensor system comprises a first sensor node and a second sensor node. Each sensor node has a plurality of sensors or a MIMS device. Each sensor node can also include electronic circuitry or a power source. A joint region is coupled between a first flexible interconnect region and a second flexible interconnect region. The first sensor node is coupled to the first flexible interconnect region. Similarly, the second sensor node is coupled to the second flexible interconnect region.

Multi-chamber transducer module, apparatus including the multi-chamber transducer module and method of manufacturing the multi-chamber transducer module

A transducer module, comprising: a supporting substrate, having a first side and a second side; a cap, which extends over the first side of the supporting substrate and defines therewith a first chamber and a second chamber internally isolated from one another; a first transducer in the first chamber; a second transducer in the second chamber; and a control chip, which extends at least partially in the first chamber and/or in the second chamber and is functionally coupled to the first and second transducers for receiving, in use, the signals transduced by the first and second transducers.

Palpation probe and its manufacturing method

Addressing ignition circuit for MEMS microthruster array chip and preparation method

WEARABLE DEVICE HAVING A MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR

A wearable device is provided having multiple sensors configured to detect and measure different parameters of interest. The wearable device includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The wearable device couples a first parameter to be measured directly to the direct sensor. Conversely, the wearable device can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the wearable device by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors to reduce form factor, cost, complexity, simplify assembly, while increasing performance. 1. A monolithically integrated multi-sensor (MIMs) comprising:an infrared sensor configured to measure a parameter; anda first MEMs sensor configured to measure a first parameter; anda second MEMs sensor configured to measure a second parameter wherein the first parameter, the second parameter and the parameter measured by the infrared sensor are different and wherein the infrared sensor, the first MEMs sensor, and the second MEMs sensor are formed at the same time on or in a single semiconductor substrate.2. The MIMS of wherein the integrated circuit is operatively coupled to a wearable device and wherein the single semiconductor substrate is silicon.3. The MIMS of wherein at least one layer of the integrated circuit is shared in common with the infrared sensor claim 1 , the first MEMs sensor claim 1 , or the second MEMs sensor and wherein at least a portion of the at least one layer is etched on or in the single semiconductor substrate.4. The MIMS of wherein at least one layer of the integrated circuit forms a cap on at least one of the infrared sensor claim 1 , the first MEMs sensor claim 1 , or ...

MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor. 1. A monolithically integrated multi-sensor (MIMS) comprising:a first sensor configured to measure a first parameter;a second sensor configured to measure a second parameter;a third sensor configured to measure a third parameter wherein the first, second, and third parameters are different, wherein the first, second, and third sensors are formed on or in a single semiconductor substrate using a monolithic semiconductor process, and wherein the a layer of the monolithic semiconductor process is common to the first, second, and third sensors.2. The monolithically integrated multi-sensor of wherein the first sensor is a micro-electrical-mechanical system (MEMS) sensor.3. The monolithically integrated multi-sensor of wherein the second sensor is a MEMS sensor.4. The monolithically integrated multi-sensor of wherein the third sensor comprises a MEMS sensor.5. The monolithically integrated multi-sensor of wherein the layer of the monolithic semiconductor process is patterned and etched simultaneously on the first claim 1 , second claim 1 , and third sensors.6. The monolithically integrated multi-sensor of wherein the ...

WEARABLE DEVICE HAVING A MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR

A wearable device is provided having multiple sensors configured to detect and measure different parameters of interest. The wearable device includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The wearable device couples a first parameter to be measured directly to the direct sensor. Conversely, the wearable device can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the wearable device by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors to reduce form factor, cost, complexity, simplify assembly, while increasing performance.

MULTI-CHAMBER TRANSDUCER MODULE, APPARATUS INCLUDING THE MULTI-CHAMBER TRANSDUCER MODULE AND METHOD OF MANUFACTURING THE MULTI-CHAMBER TRANSDUCER MODULE

A transducer module, comprising: a supporting substrate, having a first side and a second side; a cap, which extends over the first side of the supporting substrate and defines therewith a first chamber and a second chamber internally isolated from one another; a first transducer in the first chamber; a second transducer in the second chamber; and a control chip, which extends at least partially in the first chamber and/or in the second chamber and is functionally coupled to the first and second transducers for receiving, in use, the signals transduced by the first and second transducers. 1. A transducer module , comprising:a supporting substrate having a first side and a second side;a cap coupled to the first side of the supporting substrate to form a first chamber and a second chamber, the second chamber being internally isolated from the first chamber;a first sensor chip coupled to the first side of the supporting substrate in the first chamber, the first sensor chip integrating a first MEMS transducer configured to detect a first environmental quantity and to generate a first transduced signal as a function of the first environmental quantity detected;a second sensor chip coupled to the first side of the supporting substrate in the second chamber, the second sensor chip integrating a second MEMS transducer configured to detect a second environmental quantity and to generate a second transduced signal as a function of the second environmental quantity detected; anda control chip at least partially exposed in at least one of the first chamber and in the second chamber, the control chip being functionally coupled to the first and second MEMS transducers and configured to receive, in use, the first and the second transduced signals.2. The transducer module according to claim 1 , wherein the cap has a partition wall coupled to the supporting substrate claim 1 , the partition wall internally isolating the first and second chambers from each other claim 1 , the first ...

TRANSPORTATION DEVICE HAVING A MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR

A transportation device is provided having multiple sensors configured to detect and measure different parameters of interest. The transportation device includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The transportation device couples a first parameter to be measured directly to the direct sensor. Conversely, the transportation device can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the transportation device by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors such as a microphone, an accelerometer, and a temperature sensor to reduce cost, complexity, simplify assembly, while increasing performance.

Cell phone having a monolithically integrated multi-sensor device on a semiconductor substrate and method therefor

A cell phone is provided having multiple sensors configured to detect and measure different parameters of interest. The cell phone includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The cell phone couples a first parameter to be measured directly to the direct sensor. Conversely, the cell phone can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the cell phone by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors such as a microphone, an accelerometer, and a temperature sensor to reduce cost, complexity, simplify assembly, while increasing performance.

Distributed sensor system

A distributed sensor system is disclosed that provides spatial and temporal data in an operating environment. The distributed sensor nodes can be coupled together to form a distributed sensor system. For example, a distributed sensor system comprises a collection of Sensor Nodes (SN) that are physically coupled and are able to collect data about the environment in a distributed manner. For example, a first sensor node and a second sensor node is formed respectively in a first region and a second region of the semiconductor substrate. A flexible interconnect is formed overlying the semiconductor substrate and couples the first sensor node to the second sensor node. A portion of the semiconductor substrate is removed by etching beneath the flexible interconnect such that the distributed sensor system has multiple degrees of freedom that support following surface contours or sudden changes of direction.

MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR

An integrated circuit having an indirect sensor and a direct sensor formed on a common semiconductor substrate is disclosed. The direct sensor requires the parameter being measured to be directly applied to the direct sensor. Conversely, the indirect sensor can have the parameter being measured to be indirectly applied to the indirect sensor. The parameter being measured by the direct sensor is different than the parameter being measured by the indirect sensor. In other words, the direct sensor and indirect sensor are of different types. An example of a direct sensor is a pressure sensor. The pressure being measured by the pressure sensor must be applied to the pressure sensor. An example of an indirect sensor is an accelerometer. The rate of change of velocity does not have to be applied directly to the accelerometer. In one embodiment, the direct and indirect sensors are formed using photolithographic techniques.

MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

COUPLING OF SIDE SURFACE CONTACTS TO A CIRCUIT PLATFORM

An apparatus relates generally to a microelectromechanical system component. In such an apparatus, the microelectromechanical system component has a lower surface, an upper surface, first side surfaces, and second side surfaces. Surface area of the first side surfaces is greater than surface area of the second side surfaces. The microelectromechanical system component has a plurality of wire bond wires attached to and extending away from a first side surface of the first side surfaces. The wire bond wires are self-supporting and cantilevered with respect to the first side surface of the first side surfaces. 1. An apparatus , comprising:a microelectromechanical system component having a lower surface, an upper surface, first side surfaces, and second side surfaces;wherein surface area of the first side surfaces is greater than surface area of the second side surfaces;the microelectromechanical system component having a plurality of wire bond wires attached to and extending away from a first side surface of the first side surfaces;the plurality of wire bond wires having attached thereto solder balls at distal ends of the plurality of wire bond wires with respect the first side surface; andwherein the wire bond wires are self-supporting and cantilevered with respect to the first side surface of the first side surfaces with the solder balls attached thereto.27.-. (canceled)8. The apparatus according to claim 1 , wherein the plurality of wire bond wires are attached to and extend away from the first side surface in a direction generally perpendicular to the first side surface in a row on the first side surface.9. The apparatus according to claim 1 , wherein the plurality of wire bond wires are attached to and extend away from the first side surface in a direction generally perpendicular to the first side surface in a column on the first side surface.10. The apparatus according to claim 1 , wherein the plurality of wire bond wires attached to and extending away from the ...

Methods Of Forming Patterns, And Methods Of Forming Integrated Circuits

Some embodiments include methods of forming patterns in substrates by utilizing block copolymer assemblies as patterning materials. A block copolymer assembly may be formed over a substrate, with the assembly having first and second subunits arranged in a pattern of two or more domains. Metal may be selectively coupled to the first subunits relative to the second subunits to form a pattern of metal-containing regions and non-metal-containing regions. At least some of the block copolymer may be removed to form a patterned mask corresponding to the metal-containing regions. A pattern defined by the patterned mask may be transferred into the substrate with one or more etches. In some embodiments, the patterning may be utilized to form integrated circuitry, such as, for example, gatelines.

Forming nanometer-sized patterns by electron microscopy

A method for forming nanometer-sized patterns and pores in a membrane is described. The method comprises incorporating a reactive material onto the membrane, the reactive material being a material capable of lowering an amount of energy required for forming a pore and/or pattern by irradiating the membrane material with an electron beam, thus leading to a faster pore and/or pattern formation.

Nonvolatile nano-electromechanical system device

A nonvolatile nano-electromechanical system device is provided and includes a cantilever structure, including a beam having an initial shape, which is supported at one end thereof by a supporting base and a beam deflector, including a phase change material (PCM), disposed on a portion of the beam in a non-slip condition with a material of the beam, the PCM taking one of an amorphous phase or a crystalline phase and deflecting the beam from the initial shape when taking the crystalline phase.

APERTURE PLATE PERIMETER ROUTING USING ENCAPSULATED SPACER CONTACT

This disclosure provides systems, methods and apparatus for locating at least a portion of the routing interconnects on the aperture plate to reduce or completely eliminate bezel space, reduce line resistance, reduce line capacitance and increase power savings. In some implementations, one aspect, the routing interconnects may electrically connect row interconnects from an array of pixels to a row voltage driver. In some implementations, a conductive spacer may be coupled between an aperture plate and a light modulator substrate and may electrically connect at least one row interconnect on the light modulator substrate to at least one routing interconnect on the aperture plate. Some or all of the routing interconnects may run through the display area of the electromechanical device. Some or all of the conductive spacers may make contact with a row interconnect and a routing interconnected within the display area, for example via a conductive contact pad. 1. A display , comprising: at least one light modulator;', 'at least one row interconnect; and', 'at least one column interconnect;, 'a substrate including a plurality of pixels, each respective pixel includingan aperture plate including at least one routing interconnect formed thereon; anda conductive spacer coupled between the substrate and the aperture plate, the conductive spacer being an electrical connection between the at least one row interconnect and the at least one routing interconnect.2. The display of claim 1 , wherein the substrate includes at least one routing interconnect.3. The display of claim 1 , wherein each of the at least one routing interconnects is formed on the aperture plate.4. The display of claim 1 , further comprising a bezel area claim 1 , wherein the at least one routing interconnect runs through the bezel area.5. The display of claim 4 , wherein the conductive spacer makes electrical contact with the at least one routing interconnect in the bezel area.6. The display of claim 1 , ...

MEMS DEVICES ON FLEXIBLE SUBSTRATE

A flexible film including one or more MEMS elements and articles including the flexible film are described. The flexible film includes a polymer layer between two metal layers with one of the metal layers containing a perforation. The polymer layer includes voided regions that allow for relative movement of the two metal layers. 2. The flexible film of claim 1 , wherein the first voided region is aligned with the first perforation such that a first continuous open region extends between the first outer major surface of the first metallic layer to the second inner major surface of the second metallic layer.3. The flexible film of claim 2 , wherein the second metallic region includes a pattern aligned with the first voided region such that the first continuous open region extends between the first outer major surface of the first metallic layer to the second outer major surface of the second metallic layer.4. The flexible film of claim 1 , wherein the first perforation includes 1 to about 100 holes and each hole has a diameter between about 30 microns and about 200 microns.5. The flexible film of claim 1 , wherein each MEMS element further includes one or more vias extending from the second metallic layer to the first metallic layer.6. The flexible film of claim 1 , wherein each MEMS element is selected from the group consisting of a spring resonator claim 1 , a serpentine resonator claim 1 , a fixed-guided-fixed resonator claim 1 , a cantilever beam claim 1 , a clamped membrane and an inter-digitated comb-drive resonator.8. The flexible film of claim 7 , wherein the second voided region is aligned with the second perforation such that a second continuous open region extends between the third outer major surface of the third metallic layer to the second outer major surface of the second metallic layer.9. The flexible film of claim 1 , wherein the movement is in a direction substantially normal to the second outer major surface.10. The flexible film of claim 1 , ...

Integrated ultrasonic transducers

Described are transducer assemblies and imaging devices comprising: a microelectromechanical systems (MEMS) die including a plurality of piezoelectric elements; a complementary metal-oxide-semiconductor (CMOS) die electrically coupled to the MEMS die by a first plurality of bumps and including at least one circuit for controlling the plurality of piezoelectric elements; and a package secured to the CMOS die by an adhesive layer and electrically connected to the CMOS die.

SUBMILLIMETER-WAVE PHASED ARRAYS FOR ELECTRONIC BEAM SCANNING

A phased array system comprising an array of antennas outputting or receiving electromagnetic radiation to or from a steerable direction, wherein the electromagnetic radiation is at submillimeter wavelengths. The system further comprises a plurality of waveguides outputting or receiving the signals to or from the antennas, each of the waveguides with individual phase tuning. The waveguides are configured and dimensioned to guide an electromagnetic wave comprising the signals having a frequency in a range of 100 gigahertz (GHz) to 1000 terahertz (THz). The system further comprises means for phase shifting the signal by means of shifting or varying one or more phases of the signals relative to one another so as to vary, steer, or scan a direction of the electromagnetic radiation. 1. A phased array system , comprising:an array of antennas outputting or receiving electromagnetic radiation to or from a steerable direction, wherein the electromagnetic radiation is at one or more submillimeter wavelengths; anda plurality of waveguides outputting or receiving signals to or from the antennas, each of the waveguides with individual phase tuning, and the waveguides configured and dimensioned to guide an electromagnetic wave comprising the signals having a frequency in a range of 100 gigahertz (GHz) to 1000 terahertz (THz); andmeans for phase shifting the signals by means of shifting or varying one or more phases of the signals relative to one another so as to vary, steer, or scan the steerable direction.2. The phased array system of claim 1 , wherein:the antennas comprise n antennas, the means for shifting comprises n phase shifters, the waveguides comprise n waveguides, the signals comprise n signals, and the phases comprise n phases, where n is an integer,{'sup': th', 'th', 'th', 'th', 'th, 'the nphase shifter is coupled to the nwaveguide so as to vary the nphase of the nsignal in the nwaveguide,'}{'sup': th', 'th', 'th', 'th', 'th', 'th', 'th, 'the nphase shifter increases ...

Method for treating pattern structure, method for manufacturing electronic device, and treatment liquid for inhibiting collapse of pattern structure

Provided are a method for treating a pattern structure which is capable of inhibiting collapse of a pattern structure, a method for manufacturing an electronic device including such a treatment method, and a treatment liquid for inhibiting collapse of a pattern structure. The method for treating a pattern structure includes applying a treatment liquid containing a fluorine-based polymer having a repeating unit containing a fluorine atom to a pattern structure formed of an inorganic material.

SYSTEM FOR DRIVING AN ARRAY OF MEMS STRUCTURES AND CORRESPONDING DRIVING METHOD

A system for driving a MEMS array having a number of MEMS structures, each defining at least one row terminal and one column terminal, envisages: a number of row driving stages, each for supplying row-biasing signals to the row terminal of each MEMS structure associated to a respective row; a number of column driving stages, each for supplying column-biasing signals to the column terminal of each MEMS structure associated to a respective column; and a control unit, for supplying row-address signals to the row driving stages for generation of the row-biasing signals and for supplying column-address signals to the column driving stages for generation of the column-biasing signals. The control unit further supplies row-deactivation and/or column-deactivation signals to one or more of the row and column driving stages, for causing deactivation of one or more rows and/or columns of the MEMS array. 1. A system , comprising:an array of MEMS structures arranged in rows and columns, each of the MEMS structures including a row terminal and a column terminal; and a column driving stage high-side transistor coupled between a first voltage and each of the column terminals of a respective column of the MEMS structures;', 'a column driving stage low-side transistor coupled between a second voltage and each of the column terminals of the respective column of the MEMS structures; and', 'a column driving stage control block configured to supply, based on a column-address signal, a first column control voltage to a control terminal of the column driving stage high-side transistor and a second column control voltage to a control terminal of the column driving stage low-side transistor, the column driving stage control block further configured to turn off the column driving stage high-side transistor and low-side transistor, based on a column-deactivation signal., 'a plurality of column driving stages, each of the column driving stages being coupled to a respective column of the MEMS ...

DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

Provided is a display device, including: a sealing member including an opening and surrounding a space defined by a pair of light transmissive substrates; an end seal for closing the opening of the sealing member to form an encapsulation space; oil filled in the encapsulation space; a spacer for maintaining an interval between the pair of light transmissive substrates; a shutter; a drive portion arranged in the oil, for mechanically driving the shutter; and a wall portion formed on at least one of opposed surfaces of the pair of light transmissive substrates. The wall portion includes a part arranged at a position interrupting a shortest path between the opening of the sealing member and a display region. The wall portion is made of a material forming the spacer, the shutter, and the drive portion. 1. A display device , comprising:a pair of light transmissive substrates space apart by a distance;an edge seal coupled to opposing surfaces of the pair of light transmissive substrates, the edge seal including an opening and surrounding a space between the pair of light transmissive substrates;an end seal closing the opening of the edge seal to encapsulate the space;a fluid in the space;a spacer, positioned within the space to maintain the distance between the pair of light transmissive substrates;a plurality of shutter-based light modulators positioned within the space defining a display region; anda wall portion formed on at least one of the opposing surfaces of the pair of light transmissive substrates at a position interrupting a shortest path between the opening of the end seal and the display region, the wall portion being fabricated from at least one material also included in the shutter-based light modulators and the spacer.2. The display device according to claim 1 , wherein the wall portion contacts both of the opposing surfaces of the pair of light transmissive substrates.3. The display device according to claim 2 ,wherein the wall portion is arranged so as to ...

THERMAL METAMATERIAL FOR LOW POWER MEMS THERMAL CONTROL

A thermal metamaterial device comprises at least one MEMS thermal switch, comprising a substrate layer including a first material having a first thermal conductivity, and a thermal bus over a first portion of the substrate layer. The thermal bus includes a second material having a second thermal conductivity higher than the first thermal conductivity. An insulator layer is over a second portion of the substrate layer and includes a third material that is different from the first and second materials. A thermal pad is supported by a first portion of the insulator layer, the thermal pad including the second material and having an overhang portion located over a portion of the thermal bus. When a voltage is applied to the thermal pad, an electrostatic interaction occurs to cause a deflection of the overhang portion toward the thermal bus, thereby providing thermal conductivity between the thermal pad and the thermal bus. 1. A device comprising: a substrate layer including a first material having a first thermal conductivity;', 'a thermal bus over a first portion of the substrate layer, the thermal bus including a second material having a second thermal conductivity that is higher than the first thermal conductivity;', 'an insulator layer over a second portion of the substrate layer, the insulator layer including a third material that is different from the first and second materials, the insulator layer including a first portion having a first height, and a second portion having a second height that is less than the first height; and', 'a thermal pad supported by the first portion of the insulator layer, the thermal pad including the second material and having an overhang portion, wherein the overhang portion is located over a portion of the thermal bus;, 'at least one micro-electro-mechanical (MEMS) thermal switch, comprisingwherein when a voltage is applied to the thermal pad, an electrostatic interaction occurs between the thermal pad and the thermal bus to cause a ...

Mixed-technology combination of programmable elements

The present subject matter relates to systems and methods for arranging and controlling programmable combinations of tuning elements in which more than one form of switching technology is combined in a single array. Specifically, such an array can include one or more first switchable elements including a first switching technology (e.g., one or more solid-state-controlled devices) and one or more second switchable elements including a second switching technology that is different than the first switching technology (e.g., one or more micro-electro-mechanical capacitors). The one or more first switchable elements and the one or more second switchable elements can be configured, however, to deliver a combined variable reactance.

Use of Shear to Incorporate Tilt into the Microstructure of Reversible Gecko-Inspired Adhesives

The present invention relates to an easy, scalable method, relying on conventional and unconventional techniques, to incorporate tilt in the fabrication of synthetic polymer-based dry adhesives mimicking the gecko adhesive system. These dry, reversible adhesives demonstrate anisotropic adhesion properties, providing strong adhesion and friction forces when actuated in the gripping direction and an initial repulsive normal force and negligible friction when actuated in the releasing direction.

MEMS ELEMENTS ON NON-PLANAR SURFACE

A Micro Electrical Mechanical Systems (MEMS) article including a non-planar surface and a continuous film conforming to the non-planar surface is described. The continuous film includes a polymer layer disposed between two metal layers and is patterned to define one or more MEMS elements. 1. A Micro Electrical Mechanical Systems (MEMS) article , comprising:a non-planar surface; anda continuous film conforming to the non-planar surface, the continuous film comprising first and second metallic layers and a first polymer layer disposed therebetween, the continuous film being patterned to define one or more MEMS elements therein.2. The article of claim 1 , wherein the continuous film is patterned such that each MEMS element in the one or more MEMS elements includes:a first metallic region in the first metallic layer, the first metallic region including a first perforation;a first voided region in the first polymer layer, the first voided region extending continuously through a thickness of the first polymer layer; anda second metallic region in the second metallic layer, the second metallic region including a portion that is capable of a movement relative to the first metallic region.3. The article of claim 2 , wherein the first voided region is aligned with the first perforation.4. The article of claim 3 , wherein the second metallic region includes a pattern aligned with the first voided region.5. The article of claim 2 , wherein the first perforation includes 1 to about 100 holes and each hole has a diameter between about 30 microns and about 200 microns.6. The article of claim 2 , wherein the continuous film further comprises:a second polymer layer disposed on the second metallic layer opposite the first polymer layer; anda third metallic layer disposed on the second polymer layer opposite the second metallic layer.7. The article of claim 6 , wherein the continuous film is patterned such that each MEMS element in the one or more MEMS elements further includes:a ...

WIRING STRUCTURE, MEMS DEVICE, LIQUID EJECTING HEAD, LIQUID EJECTING APPARATUS, METHOD FOR MANUFACTURING MEMS DEVICE, METHOD FOR MANUFACTURING LIQUID EJECTING HEAD AND METHOD FOR MANUFACTURING LIQUID EJECTING APPARATUS

A wiring structure includes a connecting terminal array formed on a first substrate and a connected terminal array formed on a second substrate, which are electrically connected, wherein a dummy terminal that is not used for transmission and reception of an electrical signal is provided on at least one end of the connecting terminal array in a terminal arrangement direction, and an anisotropic conductive film containing a conductive particle which is disposed between the first substrate and the second substrate extends to the dummy terminal such that an end of the anisotropic conductive film is located on a surface of the dummy terminal. 1. A wiring structure comprising: a connecting terminal array formed on a first substrate; and a connected terminal array formed on a second substrate , which are electrically connected , whereina dummy terminal that is not used for transmission and reception of an electrical signal is provided on at least one end of the connecting terminal array in a terminal arrangement direction, andan anisotropic conductive film containing a conductive particle which is disposed between the first substrate and the second substrate extends to the dummy terminal such that an end of the anisotropic conductive film is located on a surface of the dummy terminal.2. The wiring structure according to claim 1 , wherein a width of the anisotropic conductive film is smaller than a width of the dummy terminal in a direction vertical to the terminal arrangement direction and at least one end of the anisotropic conductive film is located on a surface of the dummy terminal.3. The wiring structure according to claim 1 , wherein an area of the dummy terminal is the same as an area of a largest connecting terminal among a plurality of connecting terminals that form the connecting terminal array.4. A MEMS device comprising: a first substrate; and a second substrate claim 1 , which are electrically connected by the wiring structure according to .5. A MEMS device ...

NANO COMPOSITE STRUCTURE WITH NANO PATTERNED STRUCTURE ON ITS SURFACE AND METHOD OF PRODUCING THE SAME

Provided are a method of producing a nano composite structure and a nano composite structure produced by using the same. The method comprises producing a substrate; placing a metal net structure above the substrate; and plasma treating the substrate above which the metal net structure is placed. The nano composite structure includes a substrate having a plurality of first protrusions constituting a nano pattern on its surface; and an inorganic particle disposed on an end of at least a portion of the first protrusions. 1. A method of producing a nano composite structure comprising:providing a substrate;placing a metal net structure above the substrate; andplasma treating the substrate above which the metal net structure is placed.2. The method of claim 1 , whereinthe substrate comprises at least one selected from a plastic, a fiber, a glass, a metal, a ceramic, and a carbon-based material.3. The method of claim 2 , whereinthe plastic comprises at least one selected from a polypropylene, polyethylene terephthalate, polystyrene, polymethyl methacrylate, polyvinylidene fluoride, polytetrafluoroethylene, and a copolymer thereof.4. The method of claim 2 , whereinthe fiber comprises a natural fiber, synthetic fiber, or a combination thereof.5. The method of claim 2 , whereinthe carbon-based material comprises at least one selected from graphite, carbon fiber, diamond, and graphene.6. The method of claim 1 , whereinthe metal net structure is placed above the substrate with a gap of about 0 to about 10 mm.7. The method of claim 2 , whereinthe metal net structure comprises at least one selected from Ti, Cu, Au, Ag, Cr, Pt, Fe, Al, Si, an alloy thereof, and an oxide thereof.8. The method of claim 1 , whereinthe metal net structure comprises metal wires, wherein adjacent wires are spaced apart from each other with a gap of about 10 μm to about 500 μm.9. The method of claim 1 , whereinthe plasma treating comprisesdepositing a metal or metal oxide particle disposed from the metal ...

HINGED MEMS DIAPHRAGM AND METHOD OF MANUFACTURE THEREOF

A micromechanical structure, comprising a substrate having a through hole; a residual portion of a sacrificial oxide layer peripheral to the hole; and a polysilicon layer overlying the hole, patterned to have a planar portion; a supporting portion connecting the planar portion to polysilicon on the residual portion; polysilicon stiffeners formed extending beneath the planar portion overlying the hole; and polysilicon ribs surrounding the supporting portion, attached near a periphery of the planar portion. The polysilicon ribs extend to a depth beyond the stiffeners, and extend laterally beyond an edge of the planar portion. The polysilicon ribs are released from the substrate during manufacturing after the planar region, and reduce stress on the supporting portion. 1. A micromechanical structure , comprising:a substrate having a through hole;a residual portion of a sacrificial oxide layer peripheral to the through hole formed on the substrate; and a planar portion;', 'at least one supporting portion connecting the planar portion to a portion of the polysilicon layer on the residual portion of the sacrificial oxide layer peripheral to the through hole;', 'a first pattern of polysilicon stiffeners formed extending beneath the planar portion overlying the through hole, configured to stiffen the planar portion; and', 'a second pattern of polysilicon ribs selectively disposed surrounding the at least one supporting portion, attached near a periphery of the planar portion, wherein the polysilicon ribs extend from the planar portion to a depth beyond a depth of the polysilicon stiffeners, and extend laterally beyond an edge of the planar portion., 'a polysilicon layer overlying the through hole, patterned to have2. The micromechanical structure according to claim 1 , wherein the polysilicon ribs have a height at least 10 times a thickness of the planar portion.3. The micromechanical structure according to claim 1 , wherein the polysilicon stiffeners intersect the ...

METHOD FOR SEALING CAVITIES USING MEMBRANES

A method for sealing cavities using membranes, the method including a) forming cavities arranged in a matrix, of a depth p, a characteristic dimension a, and spaced apart by a spacing b; and b) forming membranes, sealing the cavities, by transferring a sealing film. The method further includes a step a1), executed before step b), of forming a first contour on the front face and/or on the sealing face, the first contour comprising a first trench having a width L and a first depth p1, the formation of the first contour being executed such that after step b) the cavities are circumscribed by the first contour, said first contour being at a distance G from the cavities between one-fifth of b and five b. 1. A method for sealing a plurality of cavities using a plurality of membranes , the method comprising:a) a step of forming a plurality of cavities opening at a front face of a support substrate or at a sealing face of a sealing film, the cavities advantageously arranged in a matrix, have a depth p, a characteristic dimension a, and are spaced apart by a spacing b; and{'b': '19', 'b) a step of forming a plurality of membranes (), sealing each of the cavities, by transferring the sealing film overlapping with the front face, the transfer comprising assembly the sealing face with the front face,'}wherein the method further comprises a step a1), executed before step b), of forming a first contour on one and/or the other of the front face and the sealing face, the first contour comprising a continuous first trench having a width L and a first depth p1, the formation of the first contour being executed such that after step b) the plurality of cavities is circumscribed by the first contour, said first contour being at an essentially constant distance G from the plurality of cavities between one-fifth of b and five b.2. The method according to claim 1 , wherein the width L is between one-fifth of a and five a.3. The method according to claim 1 , wherein the cavities are of ...

Controlled Fabrication of Nanopores in Nanometric Solid State Materials

There is provided a nanometric structure that includes a self-supporting nanometric material having a thickness of no more than about 5 nm. A plurality of nanopores is provided in the nanometric material, and the nanopore plurality has a density of at least about 1000 nanopores/cm. Each nanopore in the plurality of nanopores has a diameter that is no greater than about 10 nm. The plurality of nanopores is monodisperse in diameter with a variation of about ±30%. In a further nanometric structure provided herein there is included a self-supporting nanometric material having a thickness of no more than about 5 nm. A plurality of nanopores in the nanometric material includes at least about 50 nanopores. Each nanopore in the plurality of nanopores has a diameter that is no greater than about 10 nm. The plurality of nanopores is monodisperse in diameter with a variation of about ±30%. 1. A nanometric structure comprising:a self-supporting nanometric material having a thickness of no greater than about 5 nm; and{'sup': '2', 'a plurality of nanopores in the nanometric material, the nanopore plurality having a density of at least about 1000 nanopores/cm, each nanopore in the plurality having a diameter no greater than about 10 nm and the plurality of nanopores being monodisperse in diameter with a variation of about ±30%.'}2. The nanometric structure of wherein the nanometric material has a thickness of no greater than about 3 nm.3. The nanometric structure of wherein each nanopore has a diameter no greater than about 4 nm.4. The nanometric structure of wherein the nanometric material is selected from the group consisting of graphene claim 1 , few-layer graphene claim 1 , fluorographene claim 1 , graphane claim 1 , and graphene oxide.5. The nanometric structure of wherein the nanometric material is selected from the group consisting of hexagonal-BN claim 1 , mono-atomic glasses claim 1 , MoS claim 1 , WS claim 1 , MoSe claim 1 , MoTe claim 1 , TaSe claim 1 , NbSe claim 1 , ...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

A semiconductor device includes a semiconductor substrate comprising a MOS transistor. A MEMS device is integrally constructed above the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm. 1. A semiconductor device , comprising:a semiconductor substrate comprising a MOS transistor; anda MEMS device integrally constructed above the MOS transistor, wherein the MEMS device comprising a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.2. The semiconductor device according to further comprising:a first inter-metal dielectric (IMD) layer, wherein the second topmost metal layer is embedded in the first IMD layer;a second IMD layer on the first IMD layer;a topmost metal layer embedded in the second IMD layer;a dielectric layer covering the topmost metal layer and the second IMD layer, wherein the pad metal layer is disposed on the dielectric layer; anda passivation layer on the pad metal layer.3. The semiconductor device according to claim 2 , wherein the dielectric layer comprises an opening directly above the cavity.4. The semiconductor device according to claim 3 , wherein the diaphragm is situated within the opening.5. The semiconductor device according to claim 2 , wherein the pad metal layer comprises AlCu alloy claim 2 , and wherein the topmost metal layer and the second topmost metal layer comprise copper.6. The semiconductor device according to further comprising a via opening penetrating through the passivation layer claim 2 , wherein the via opening communicates with the cavity.7. The semiconductor device according to claim 6 , wherein the via opening partially exposes a sidewall surface of the diaphragm claim 6 , but does not penetrate through the diaphragm.8. The semiconductor device according to claim 1 , wherein the MEMS device ...

Distributed sensor system

A distributed sensor system is disclosed that provides spatial and temporal data in an operating environment. The distributed sensor nodes can be coupled together to form a distributed sensor system. For example, a distributed sensor system comprises a collection of Sensor Nodes (SN) that are physically coupled and are able to collect data about the environment in a distributed manner. An example of a distributed sensor system comprises a first sensor node and a second sensor node. Each sensor node has a plurality of sensors or a MIMS device. Each sensor node can also include electronic circuitry or a power source. A joint region is coupled between a first flexible interconnect region and a second flexible interconnect region. The first sensor node is coupled to the first flexible interconnect region. Similarly, the second sensor node is coupled to the second flexible interconnect region.

Rubbing-Induced Site-Selective Growth Of Device Patterns

The superior electronic and mechanical properties of 2D-layered transition metal dichalcogenides and other 2D layered materials could be exploited to make a broad range of devices with attractive functionalities. However, the nanofabrication of such layered-material-based devices still needs resist-based lithography and plasma etching processes for patterning layered materials into functional device features. Such patterning processes lead to unavoidable contaminations, to which the transport characteristics of atomically-thin layered materials are very sensitive. More seriously, such lithography-introduced contaminants cannot be safely eliminated by conventional material wafer cleaning approaches. This disclosure introduces a rubbing-induced site-selective growth method capable of directly generating few-layer molybdenum disulfide device patterns without the need of any additional patterning processes. This method consists of two critical steps: (i) a damage-free mechanical rubbing process for generating microscale triboelectric charge patterns on a dielectric surface, and (ii) site-selective deposition of molybdenum disulfide or the like within rubbing-induced charge patterns.

FABRICATION OF NANOWIRE ARRAYS

The present invention generally relates to nanowire arrays and methods of fabricating such arrays. In certain embodiments, the fabrication methods can consistently form NW arrays with reproducible configurations at nanoscale sites and produce NWs of specified heights, diameters, and densities. In some cases, the methods also allow formation of NW arrays containing barriers between regions, which would be prohibitively expensive if prepared by other methods. 1. A method of preparing an array of nanowires , the method comprising:providing a substrate,coating the substrate with a positive resist,exposing the resist to a pre-determined pattern of photons or electrons to form a pattern of nanosites,developing the resist so that the pattern of the nanosites is converted to a pattern of nanoholes in the resist,depositing a hard etch mask into each of the nanoholes,uplifting the resist thereby leaving a pattern of nanospots each covered by the hard etch mask, the pattern of the nanospots being the same as the pattern of the nanoholes, andetching the substrate to a desired depth to yield an array of nanowires, the hard etch masks protecting the covered nanospots and the substrate beneath there from being etched,{'sup': '2', 'whereby the nanowires are formed at a plurality of positions arranged in two dimensions and have a local density of 0.001 to 10 nanowires per micrometer (μm).'}2. The method of claim 1 , wherein the nanowires are formed in a plurality of columns and a plurality of rows.3. The method of any one of or claim 1 , wherein the hard etch mask contains aluminum claim 1 , aluminum oxide claim 1 , or a combination thereof.43. The method of any one of - claims 1 , further comprising claims 1 , before the etching step claims 1 , applying a protective cover to one or more regions of the substrate claims 1 , thereby further protecting the regions from being etched.54. The method of any one of - claims 1 , wherein the substrate is a silicon substrate.65. An array of ...

ENVIRONMENTALLY RESPONSIVE OPTICAL MICROSTRUCTURED HYBRID ACTUATOR ASSEMBLIES AND APPLICATIONS THEREOF

Microstructured hybrid actuator assemblies in which microactuators carrying designed surface properties to be revealed upon actuation are embedded in a layer of responsive materials. The microactuators in a microactuator array reversibly change their configuration in response to a change in the environment without requiring an external power source to switch their optical properties. 120-. (canceled)22. The apparatus of claim 21 , wherein the microactuators are configured to deform in response to the volume change.23. The apparatus of claim 22 , wherein the microactuators are configured to bend in response to the volume change.24. The apparatus of claim 22 , wherein the microactuators are configured to twist or buckle in response to the volume change.25. The apparatus of claim 22 , wherein the microactuators are configured to tilt in response to the volume change.26. The apparatus of claim 21 , wherein the microactuators are cylindrical objects that are fully embedded or partially embedded in the hydrogel layer.27. The apparatus of claim 21 , wherein the plurality of microactuators is an array of deformable geometrical features including posts claim 21 , blades claim 21 , cones claim 21 , pyramids or inverted cones embedded fully or partially in the hydrogel layer.28. The apparatus of claim 21 , wherein each microactuator of the plurality of microactuators has a cross-sectional shape claim 21 , defined in a plane parallel to the surface of the substrate claim 21 , that is circular claim 21 , square claim 21 , oval claim 21 , rectangular or irregular.29. The apparatus of claim 21 , wherein each microactuator of the plurality of microactuators has a cross-sectional shape claim 21 , defined in a plane parallel to the surface of the substrate claim 21 , that is a combination of at least two of: circular claim 21 , square claim 21 , oval claim 21 , rectangular and irregular.30. The apparatus of claim 21 , wherein each microactuator of the plurality of microactuators has ...

MICROMECHANICAL COMPONENT INCLUDING A DIFFUSION STOP CHANNEL

A method for manufacturing a micromechanical component is provided including a substrate and including a cap, which is connected to the substrate and, together with the substrate, encloses a first cavity, a first pressure prevailing and a first gas mixture having a first chemical composition being enclosed in the first cavity, the cap together with the substrate enclosing a second cavity, a second pressure prevailing and a second gas mixture having a second chemical composition being enclosed in the second cavity. A recess situated essentially between the first cavity and the second cavity is formed for diverting at least one first particle type of the first gas mixture and/or at least one second particle type of the second gas mixture. 1. A method for manufacturing a micromechanical component including a substrate and a cap connected to the substrate , the cap , together with the substrate , enclosing a first cavity , a first pressure prevailing and a first gas mixture having a first chemical composition being enclosed in the first cavity , the cap , together with substrate enclosing a second cavity , a second pressure prevailing and a second gas mixture having a second chemical composition being enclosed in the second cavity , the method comprising:in a first method step, forming an access opening connecting the first cavity to surroundings of the micromechanical component in the substrate or in the cap;in a second method step, adjusting at least one of the first pressure and the first chemical composition, in the first cavity;in a third method step, sealing the access opening by introducing energy or heat into an absorbing part of the substrate or the cap, with the aid of a laser; andin a fourth method step, forming a recess essentially between the first cavity and the second cavity for diverting at least one of: i) at least one first particle type of the first gas mixture, and ii) at least one second particle type of the second gas mixture.2. The method as ...

Systems and methods for selecting an operating voltage of a display apparatus

This disclosure provides systems, methods and apparatus for selecting an operating voltage of a display apparatus. In one aspect, a display apparatus can include a plurality of a plurality of image-forming display elements and optically inactive display elements. The image-forming display elements and optically inactive display elements can have a common architecture. Each optically inactive display element can have one or more design parameters that are different from a corresponding design parameter of the image-forming display elements. At least one test voltage can be applied to the optically inactive display elements, and their shutter response times can be measured. An operating voltage for the display apparatus can be selected based on the measured response times.

Microelectromechanical device with multiple hinges

An example microelectromechanical system (MEMS) switch comprises a hinge plane having two or more intersecting hinges; a switch plate; and a plurality of electrostatic pads. Selective activation of the electrostatic pads causes torsion of at least one of the two or more intersecting hinges to tilt the switch plate to a selected one of three or more positions.

MICRO-ASSEMBLER SYSTEM FOR CONTROLLING PLACEMENT OF MICRO-OBJECTS

Disclosed are methods and systems of controlling the placement of micro-objects on the surface of a micro-assembler. Control patterns may be used to cause phototransistors or electrodes of the micro-assembler to generate dielectrophoretic (DEP) and electrophoretic (EP) forces which may be used to manipulate, move, position, or orient one or more micro-objects on the surface of the micro-assembler. 1. A method , comprising:depositing a set of micro-objects onto a surface of a micro-assembler, wherein the micro-assembler comprises a two-dimensional array of force generating pixels; andmanipulating the set of micro-objects individually on the surface of the micro-assembler using a set of control patterns simultaneously, wherein each control pattern of the set of control patterns indicates a force pattern on a portion of the two-dimensional array of force generating pixels.2. The method of claim 1 , wherein each control pattern of the set of control patterns further indicates a center position and an orientation for a respective force pattern.3. The method of claim 1 , wherein each control pattern of the set of control patterns is determined based on one or more of:user input provided by a user of the micro-assembler;an analysis of the set of micro-objects performed by a computing device; anda pre-determined order or timing for the set of control patterns.4. The method of claim 1 , wherein manipulating the set of micro-objects on the surface of the micro-assembler comprises:moving the set of micro-objects across the surface of the micro-assembler relative to one or more of a reference structure or a second set of micro-objects, using the set of control patterns.5. The method of claim 1 , wherein manipulating the set of micro-objects on the surface of the micro-assembler comprises:rotating the set of micro-objects with respect to the surface of the micro-assembler or relative to one or more of a reference structure or a second set of micro-objects, using the set of ...

Device for Dynamic Fluid Pinning

The present disclosure provides microstructured hydrophobic surfaces and devices for gripping wet deformable surfaces. The surfaces and devices disclosed herein utilize a split contact Wenzel-Cassie mechanism to develop multi-level Wenzel-Cassie structures. The Wenzel-Cassie structures are separated with a spatial period corresponding to at least one wrinkle eigenmode of a wet deformable surface to which the microstructure or device is designed to contact, allowing grip of the deformable surface without slippage. Microstructures of the present invention are specifically designed to prevent the formation of Shallamach waves when a shear force is applied to a deformable surface. The multi-level Wenzel-Cassie states of the present disclosure develop temporally, and accordingly are characterized by hierarchical fluid pinning, both in the instance of slippage, and more importantly in the instance of localization. This temporal aspect to the multi-level Wenzel-Cassie state delays or prevents the transition from a wrinkled eigenmode state in a deformable surface to a buckled state in a deformable surface. 1. A device comprising a microstructured surface having at least two hierarchical levels that are self-similar , including a first level and a second level , each of the first and second levels include microfeatures wherein the first level microfeatures have a width of 1 to 20 microns , a height of 1 to 20 microns , and a pitch between adjacent microfeatures of 1 to 20 microns , the second level microfeatures have a width of 10 to 500 microns , a height of 10 to 500 microns , and a pitch between adjacent microfeatures of 10 to 500 microns , the first level being disposed about the second level , the at least two hierarchical levels produce a Wenzel-Cassie fluid pinning state when placed in contact with a wet surface , and the at least two hierarchical levels produce a split contact Wenzel-Cassie wetting state.2. The device of claim 1 , wherein the at least two ...

CHARGE PUMP SYSTEMS, DEVICES, AND METHODS

The present subject matter relates to charge pump devices, systems, and methods in which a first plurality of series-connected charge-pump stages is connected between a supply voltage node and a first circuit node, wherein the first plurality of charge-pump stages are operable to produce a first electrical charge at the first circuit node, the first electrical charge having a first polarity; and a second plurality of series-connected charge-pump stages is connected between the supply voltage node and a second circuit node, wherein the second plurality of charge-pump stages are operable to produce a second electrical charge at the second circuit node, the second electrical charge having a second polarity. 1. A charge pump comprising:a first plurality of series-connected charge-pump stages connected between a supply voltage node and a first circuit node, wherein the first plurality of charge-pump stages are operable to produce a first electrical charge at the first circuit node; anda second plurality of series-connected charge-pump stages connected between the supply voltage node and a second circuit node, wherein the second plurality of charge-pump stages are operable to produce a second electrical charge at the second circuit node.2. The charge pump of claim 1 , wherein each of the charge-pump stages comprises a silicon-on-insulator (SOI) device.3. The charge pump of claim 1 , wherein the first circuit node and the second circuit node are connected to a common output node.4. The charge pump of claim 3 , comprising a single clock driver circuit in communication with both of the first plurality of series-connected charge-pump stages and the second plurality of series-connected charge-pump stages claim 3 , wherein the single clock driver circuit is configured to selectively drive charge through one or both of the first plurality of series-connected charge-pump stages and the second plurality of series-connected charge-pump stages to supply one or both of the first ...

CHARGE PUMP SYSTEMS, DEVICES, AND METHODS

The present subject matter relates to charge pump devices, systems, and methods in which a plurality of series-connected charge-pump stages are connected between a supply voltage node and a primary circuit node, and a discharge circuit is connected to the plurality of charge-pump stages, wherein the discharge circuit is configured to selectively remove charge from the primary circuit node. 1. A controllable power supply comprising:a plurality of series-connected charge-pump stages connected, at a first end, to a supply voltage node and, at a second end, to a common primary circuit node; anda discharge circuit, comprising a plurality of sub-circuits or circuit elements, the discharge circuit being connected, at a first discharge end, to the common primary circuit node and, at a second discharge end, to a reference, wherein the discharge circuit is configured to selectively remove charge from the common primary circuit node.2. The controllable power supply of claim 1 , wherein the discharge circuit is also connected to the plurality of charge-pump stages at a location other than the common primary circuit node.3. The controllable power supply of claim 1 , wherein each of the charge-pump stages comprises a silicon-on-insulator (SOI) device.4. The controllable power supply of claim 1 , wherein the discharge circuit comprises:a plurality of transistors arranged in a cascaded array between the common primary circuit node and the reference, wherein each of the plurality of transistors is connected between two charge pump stages of the plurality of charge pump stages or between a charge pump stage and either the common primary circuit node or the supply voltage node; anda shorting switch connected between the plurality of transistors and the reference.5. The controllable power supply of claim 4 , wherein each of the plurality of transistors comprises a silicon-on-insulator (SOI) device.6. The controllable power supply of claim 4 , wherein the discharge circuit comprises a ...

Nanowire array, optoelectronic device and preparation method thereof

Provided is a nanowire array, in which a plurality of nanowires are densely packed and in contact with each other via side walls to form a three-dimensional, compact layer structure, wherein the plurality of nanowires are formed from InGaN-based material. Also provided is an optoelectronic device comprising the nanowire array which is epitaxially grown on a surface of a substrate (12). Further provided are methods for preparing the nanowire array and the optoelectronic device.

Methods for fabricating high aspect ratio probes and deforming high aspect ratio nanopillars and micropillars

Methods for fabricating of high aspect ratio probes and deforming micropillars and nanopillars are described. Use of polymers in deforming nanopillars and micropillars is also described.

MICROMECHANICAL SENSOR UNIT AND METHOD FOR MANUFACTURING A MICROMECHANICAL SENSOR UNIT

A micromechanical sensor unit, including: a substrate and an edge layer, which is situated on the substrate and laterally frames an inner area above the substrate; at least one diaphragm, which spans the inner area and forms a covered cavity above the substrate; at least one support point, which is situated between the substrate and the diaphragm inside the cavity and attaches the diaphragm to the edge layer and/or to the at least one support point. The support point separates the diaphragm into at least one measuring area that is movable through force action and at least one reference area that is not movable through force action. The substrate and the diaphragm, inside the cavity, include electrodes, which face one another in the measuring area and the reference area. 112-. (canceled)13. A micromechanical sensor unit , comprising:a substrate, and an edge layer which is situated on the substrate and laterally frames an inner area above the substrate;at least one diaphragm which spans the inner area and forms a covered cavity above the substrate; andat least one support point, situated between the substrate and the diaphragm inside the cavity, the diaphragm being attached to the edge layer and to the at least one support point, the support point separating the diaphragm into at least one measuring area that is movable through force action and at least one reference area that is not movable through force action;wherein the substrate and the diaphragm, inside the cavity, include electrodes which face one another, the electrodes being in the measuring area and the reference area;wherein the diaphragm includes multiple rectangular, or polygonal, or round measuring areas; andwherein the diaphragm includes an identical number of measuring areas and reference areas, which are interconnected with one another in the form of a Wheatstone bridge.14. The sensor unit as recited in claim 13 , wherein the support points claim 13 , in a top view onto the substrate claim 13 , are ...

CHARGE PUMP SYSTEMS, DEVICES, AND METHODS

The present subject matter relates to charge pump devices, systems, and methods in which a plurality of series-connected charge-pump stages are connected between a supply voltage node and a primary circuit node, and a discharge circuit is connected to the plurality of charge-pump stages, wherein the discharge circuit is configured to selectively remove charge from the primary circuit node. 1. A micro-electro-mechanical systems (MEMS) array comprising:a plurality of charge pumps, each of the plurality of charge pumps comprising a plurality of series-connected charge-pump stages connected between a supply voltage node and a primary circuit node; at least one fixed electrode; and', 'a movable beam including at least one movable electrode that is spaced apart from the at least one fixed electrode and is movable with respect to the at least one fixed electrode;, 'a plurality of MEMS devices, each of the plurality of MEMS devices connected to one of the plurality of charge pumps and comprisingwherein the primary circuit node of the one of the plurality of charge pumps is connected to one of the at least one movable electrode or the at least one fixed electrode;wherein the plurality of charge pumps are selectively operable to drive a corresponding combination of the plurality of MEMS devices.2. The micro-electro-mechanical systems (MEMS) array of claim 1 , wherein each of the charge-pump stages comprises a silicon-on-insulator (SOI) device.3. The micro-electro-mechanical systems (MEMS) array of claim 1 , wherein each of the plurality of charge pumps comprises a discharge circuit connected to the plurality of charge-pump stages claim 1 , wherein the discharge circuit is configured to selectively remove charge from the primary circuit node.4. The micro-electro-mechanical systems (MEMS) array of claim 1 , wherein the discharge circuit comprises a plurality of transistors arranged in a cascaded array between the primary circuit node and a reference claim 1 , wherein each of ...

HIERARCHICAL MICRO ASSEMBLER SYSTEM

An electrode array including a substrate. The electrode array includes a first plurality of electrodes disposed above a first zone of the substrate, wherein the first plurality of electrodes has a first range of spacing. The electrode array further includes a second plurality of electrodes disposed above a second zone of the substrate, wherein the second plurality of electrodes has a second range of spacing that is less than the first range of spacing. 1. An electrode array comprising:a substrate;a first plurality of electrodes disposed above a first zone of the substrate, wherein the first plurality of electrodes has a first range of spacing; anda second plurality of electrodes disposed above a second zone of the substrate, wherein the second plurality of electrodes has a second range of spacing that is less than the first range of spacing.2. The electrode array of claim 1 , further comprising:a dielectric layer disposed above the first plurality of electrodes and the second plurality of electrodes.3. The electrode array of claim 1 , wherein the first range of spacing of the first plurality of electrodes is between 15-1000 microns claim 1 , inclusive.4. The electrode array of claim 1 , wherein the second range of spacing of the second plurality of electrodes is between 1-50 microns claim 1 , inclusive.5. The electrode array of claim 1 , further comprising a transfer film disposed above the first plurality of electrodes and the second plurality of electrodes claim 1 , wherein the transfer film is translatable relative to the first plurality of electrodes and the second plurality of electrodes.6. The electrode array of claim 1 , wherein the first range of spacing corresponds to different sizes in spacing between pairs of electrodes of the first plurality of electrodes and the second range of spacing corresponds to different sizes in spacing between pairs of electrodes of the second plurality of electrodes.7. The electrode array of claim 6 , wherein the first range of ...

Nano-engineered surfaces for actively reversible and reusable dry adhesion systems and related methods

An actively reversible and reusable dry adhesion system, and related methods for using the same, may comprise a first plurality of nanoparticles, e.g., carbon nanotubes, formed on a first substrate that may be selectively reconfigured in response to an active stimulus, e.g., electrical current, temperature gradient, magnetism, etc.; a second plurality of nanoparticles, e.g., carbon nanotubes, formed on a second substrate that may be selectively reconfigured in response to the active stimulus; and a switch or button that may be operably connected to the first and second substrates. The switch or button may be configured to selectively apply the active stimulus. When the switch or button is activated, the first and second pluralities of nanoparticles may interlock to adhere the first substrate to the second substrate. The dry adhesion system may form an interlocking fastener on a nanoscale, and may be reversible and reusable.

INTEGRATED ULTRASONIC TRANSDUCERS

A transducer assembly includes: a microelectromechanical systems (MEMS) die including a plurality of piezoelectric elements; a complementary metal-oxide-semiconductor (CMOS) die electrically coupled to the MEMS die by a first plurality of bumps and including at least one circuit for controlling the plurality of piezoelectric elements; and a package secured to the CMOS die by an adhesive layer and electrically connected to the CMOS die. 1. A transducer assembly , comprising: a complementary metal-oxide-semiconductor (CMOS) die electrically coupled to the MEMS die by a first plurality of bumps and including at least one circuit for controlling the plurality of piezoelectric elements; and', 'a package secured to the CMOS die by an adhesive layer and electrically connected to the CMOS die., 'a microelectromechanical systems (MEMS) die including a plurality of piezoelectric elements;'}2. The transducer assembly of claim 1 , wherein each of the plurality of piezoelectric elements includes:a substrate;a membrane disposed on the substrate; anda stack of layers disposed on at least one of the membrane and substrate and having a bottom electrode, a piezoelectric layer and a top electrode.3. The transducer assembly of claim 2 , further comprising:a plurality of electrical wires formed on the MEMS die,wherein at least one electrical wire of the plurality of electrical wires is in direct contact with the first plurality of bumps.4. The transducer assembly of claim 2 , further comprising:a cover layer for covering the substrates of the plurality of piezoelectric elements and formed of an impedance matching material.5. The transducer assembly of claim 2 , wherein the substrate includes a cavity and a portion of the substrate thinned by the cavity corresponds to the membrane and wherein the stack of layers vibrates the membrane to generate a pressure wave that propagates from the membrane.6. The transducer assembly of claim 1 , wherein the adhesive layer is formed of acoustic ...

Charge pump systems, devices, and methods

The present subject matter relates to charge pump devices, systems, and methods in which a plurality of series-connected charge-pump stages are connected between a supply voltage node and a primary circuit node, and a discharge circuit is connected to the plurality of charge-pump stages, wherein the discharge circuit is configured to selectively remove charge from the primary circuit node. 1. A charge pump comprising:a plurality of series-connected charge-pump stages connected between a supply voltage node and a primary circuit node; anda discharge circuit connected to the plurality of charge-pump stages, wherein the discharge circuit is configured to selectively remove charge from the primary circuit node.2. The charge pump of claim 1 , wherein each of the charge-pump stages comprises a silicon-on-insulator (SOI) device.3. The charge pump of claim 1 , wherein the discharge circuit comprises:a plurality of transistors arranged in a cascaded array between the primary circuit node and a reference, wherein each of the plurality of transistors is connected to one of the plurality of charge pump stages; anda shorting switch connected between the plurality of transistors and the reference.4. The charge pump of claim 3 , wherein each of the plurality of transistors comprises a silicon-on-insulator (SOI) device.5. The charge pump of claim 3 , wherein the discharge circuit comprises a diode connected between a gate and a drain of each of the plurality of transistors.6. The charge pump of claim 3 , wherein the shorting switch comprises a gate of a one of the plurality of transistors that is closest to the reference.7. The charge pump of claim 1 , comprising a clock driver circuit in communication with the series-connected charge-pump stages.8. The charge pump of claim 1 , comprising a voltage measurement device configured to measure a present charge state of at the primary circuit node;wherein the voltage measurement device is connected in communication with one of the ...

Contact pads for electrical module assembly with multidimensional transducer arrays

For multidimensional transducer array interconnection, circuit boards with electronics are stacked to form a surface for connection with the array. The surface of the circuit boards for connecting with the transducer array is metalized and diced. Rather than relying on small exposed traces, larger contact pads are formed by metalizing the surface and then dicing the surface. This forms an array of contact pads for connecting with the z-axis or other connectors for elements of the multidimensional transducer array. 1. A multidimensional transducer array system , the system comprising:a first printed circuit board having a first surface with ends of traces, the ends of the traces electrically connecting to metallic contact pads separated by kerfs in the first surface;a multidimensional transducer array having first elements in electrical contact with the metallic contact pads; andan integrated circuit connected with the first printed circuit board such that signals on the contact pads are provided at the integrated circuit by the traces, the integrated circuit connected on a second surface of the first printed circuit board different than the first surface.2. The system of wherein the ends of the traces and the contact pads on the first surface have a first pitch of the first elements of the multidimensional transducer array.3. The system of wherein the metallic contact pads include a noble metal layer.4. The system of wherein the kerfs in the first surface are patterned to match kerfs separating the first elements of the multidimensional transducer array.5. The system of wherein the contact pads have a surface area parallel to the first surface at least ten times greater than the ends of the traces.6. The system of wherein none of the first printed circuit board extends past the contact pads of the first surface.7. The system of further comprising ground pads on the first surface or a third surface of the first printed circuit board claim 1 , the ground pads ...

MEMS PRESSURE SENSING ELEMENT

The present invention discloses an MEMS pressure sensing element, including a substrate provided with a groove; a pressure-sensitive film disposed above the substrate, the pressure-sensitive film sealing an opening of the groove to form a sealed cavity; and a movable electrode plate and a fixed electrode plate which are located in the sealed cavity and form a capacitor structure, wherein the fixed electrode plate is fixed on a bottom wall of the groove of the substrate, and the movable electrode plate is suspended above the fixed electrode plate and opposite to the fixed electrode plate; and the pressure-sensitive film is connected to the movable electrode plate so as to drive the movable electrode plate to move under the action of an external pressure. According to the MEMS pressure sensing element, pressure sensitivity and electrical detection are separated, the pressure-sensitive film is exposed in air, the capacitor structures are disposed in the sealed cavity defined by the pressure-sensitive film and the substrate, and the movable electrode plates of the capacitor structures can be driven by the pressure-sensitive film. In this way, not only is a pressure-sensitive function finished, but also external electromagnetic interferences on the capacitor structures are shielded. 110-. (canceled)11. An MEMS pressure sensing element , comprising:a substrate provided with a groove;a pressure-sensitive film disposed above the substrate, the pressure-sensitive film sealing an opening of the groove to form a sealed cavity; anda movable electrode plate and a fixed electrode plate which are located in the sealed cavity and form a capacitor structure,wherein the fixed electrode plate is fixed on a bottom wall of the groove of the substrate, and the movable electrode plate is suspended above the fixed electrode plate and opposite to the fixed electrode plate; and the pressure-sensitive film is connected to the movable electrode plate so as to drive the movable electrode plate ...

FORMATION OF RELIEFS ON THE SURFACE OF A SUBSTRATE

A method for forming reliefs on a face of a substrate is provided, successively including forming a protective screen for protecting at least a first zone of the face; an implanting to introduce at least one species comprising carbon into the substrate from the face of the substrate, the forming of the protective screen and the implanting being configured to form, in the substrate, at least one carbon modified layer having a concentration of implanted carbon greater than or equal to an etching threshold only from a second zone of the face of the substrate not protected by the protective screen; removing the protective screen; and etching the substrate from the first zone selectively with respect to the second zone. 1. A method for forming reliefs on a face of a substrate , successively comprising:forming a protective screen for protecting at least a first zone of the face of the substrate, the forming comprising depositing a layer for defining patterns on the face of the substrate, and then forming, using the deposited layer for defining patterns, at least one pattern in the first zone, the deposited layer for defining patterns comprising at least one carbon species;an implanting to introduce at least one species comprising carbon into the substrate from the face of the substrate, the forming of the protective screen and the implanting being configured to form, in the substrate, at least one carbon modified layer having a concentration of implanted carbon greater than or equal to an etching threshold only from a second zone of the face of the substrate not protected by the protective screen,the implanting comprising using an ion beam to:remove, from the layer for defining patterns, at least carbon ions of the at least one carbon species, andmake carbon ions penetrate into the substrate and from the second zone so as to at least partially form the at least one carbon modified layer;removing the protective screen; andetching the substrate from the first zone ...

ARTIFICIAL MATERIAL

An apparatus includes a base having a first surface and an array of pillars. Each pillar of the array of pillars includes (i) a first end attached to the first surface of the base; (ii) a second end having an electric charge retention portion; (iii) a physical separation from adjacent pillars of the array of pillars; and (iv) an electrical conductor configured to electrically connect the electric charge retention portion with a bus structure. The bus structure is configured to addressably connect with the electrical conductor of each respective pillar of the array of pillars. 1. An apparatus comprising:a base having a first surface; (i) a first end attached to the first surface of the base;', '(ii) a second end having an electric charge retention portion;', '(iii) a physical separation from adjacent pillars of the array of pillars; and', '(iv) an electrical conductor configured to electrically connect the electric charge retention portion with a bus structure;, 'an array of pillars, each pillar of the array of pillars includeswherein the bus structure is configured to addressably connect with the electrical conductor of each respective pillar of the array of pillars.2. The apparatus of claim 1 , wherein the base includes the bus structure.3. (canceled)4. The apparatus of claim 1 , wherein the base includes a flexible base.5. The apparatus of claim 1 , wherein the base includes a flexible material wearable by or integratable into a fabric wearable by a human user.6. (canceled)7. The apparatus of claim 1 , wherein the base includes an electronic substrate material.8. The apparatus of claim 1 , wherein the base includes a material structured to propagate surface acoustic waves.9. The apparatus of claim 1 , wherein the base includes a material structured to propagate bulk acoustic waves.10. The apparatus of claim 1 , wherein the base includes a second surface opposite the first surface and configured to reflect electromagnetic waves.11. The apparatus of claim 1 , ...

METHOD FOR FABRICATING MEMS DEVICE INTEGRATED WITH A SEMICONDUCTOR INTEGRATED CIRCUIT

A method for fabricating a semiconductor device is disclosed. A semiconductor substrate comprising a MOS transistor is provided. A MEMS device is formed over the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm. 1. A method for fabricating a semiconductor device , comprising:providing a semiconductor substrate comprising a metal-oxide-semiconductor (MOS) transistor; andforming a Micro-Electro-Mechanical Systems (MEMS) device over the MOS transistor, wherein the MEMS device comprising a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm, wherein the bottom electrode is a continuous planar structure.2. The method for fabricating a semiconductor device according to further comprising:forming a first inter-metal dielectric (IMD) layer on the semiconductor substrate;forming the second topmost metal layer in the first IMD layer;forming a second IMD layer on the first IMD layer;forming a topmost metal layer in the second IMD layer;forming a dielectric layer covering the topmost metal layer and the second IMD layer; andforming an opening in the dielectric layer, wherein the opening partially exposes a top surface of the topmost metal layer.3. The method for fabricating a semiconductor device according to further comprising:forming the pad metal layer on the dielectric layer and in the opening; andforming a passivation layer on the pad metal layer.4. The method for fabricating a semiconductor device according to further comprising:forming a via opening penetrating through the passivation layer and partially exposing the top surface of the topmost metal layer; andetching away the topmost metal layer through the via opening, thereby forming the cavity.5. The method for fabricating a semiconductor device according to claim 4 , wherein the topmost ...

Chip level sensor with multiple degrees of freedom

A sensing assembly device includes a substrate, a chamber above the substrate, a first piezoelectric gyroscope sensor positioned within the chamber, and a first accelerometer positioned within the chamber.

Method of forming an electromechanical power switch for controlling power to integrated circuit devices and related devices

A method of forming an electromechanical power switch for controlling power to integrated circuit (IC) devices and related devices. At least some of the illustrative embodiments are methods comprising forming at least one IC device on a front surface of a semiconductor substrate. The at least one IC device includes at least one circuit block and at least one power switch circuit. A dielectric layer is deposited on the IC device, and first and second electromechanical power switches are formed on the dielectric layer. The first power switch gates a voltage to the circuit block and the second power switch gates the voltage to the IC device. The first power switch is actuated by the power switch circuit, and the voltage to the circuit block is switched off. Alternatively, the second power switch is actuated by the power switch circuit, and the voltage to the IC device is switched off.

Monolithically integrated multi-sensor device on a semiconductor substrate and method therefor

An integrated circuit having an indirect sensor and a direct sensor formed on a common semiconductor substrate is disclosed. The direct sensor requires the parameter being measured to be directly applied to the direct sensor. Conversely, the indirect sensor can have the parameter being measured to be indirectly applied to the indirect sensor. The parameter being measured by the direct sensor is different than the parameter being measured by the indirect sensor. In other words, the direct sensor and indirect sensor are of different types. An example of a direct sensor is a pressure sensor. The pressure being measured by the pressure sensor must be applied to the pressure sensor. An example of an indirect sensor is an accelerometer. The rate of change of velocity does not have to be applied directly to the accelerometer. In one embodiment, the direct and indirect sensors are formed using photolithographic techniques.

Semiconductor device having microelectromechanical systems devices with improved cavity pressure uniformity

Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes an interconnect structure disposed over a semiconductor substrate. A dielectric structure is disposed over the interconnect structure. A plurality of cavities are disposed in the dielectric structure. A microelectromechanical system (MEMS) substrate is disposed over the dielectric structure, where the MEMS substrate comprises a plurality of movable membranes, and where the movable membranes overlie the cavities, respectively. A plurality of fluid communication channels are disposed in the dielectric structure, where each of the fluid communication channels extend laterally between two neighboring cavities of the cavities, such that each of the cavities are in fluid communication with one another.

Method for sealing cavities using membranes

The invention relates to a method of sealing cavities (11) using membranes, the method comprising: na) forming cavities (11) which are arranged in the manner of a matrix and which have a depth p and a characteristic dimension a and are spaced apart by a spacing b; b) forming membranes which seal the cavities (11) by transferring a sealing film; the method comprises a step a1), which is carried out before step b), of forming a first contour on the front face (10a) and/or on the sealing face (16a), the first contour comprising a first channel (21) which has a width L and a first depth p1, the formation of the first contour being carried out so that, at the end of step b), the cavities (11) are circumscribed by the first contour, the first contour being at a distance G from the cavities which is between one fifth of b and five b.

一种环境传感器及其制造方法

本发明公开了一种环境传感器及其制造方法，包括基材，在所述基材的上端设有至少一个凹槽，还包括位于基材上方的敏感膜层，所述敏感膜层包括固定在基材端面上的固定部，以及伸入至凹槽内的弯曲部，所述弯曲部与凹槽的侧壁构成了用于检测信号的电容器；其中，所述弯曲部、固定部与凹槽形成了密闭的容腔。本发明的环境传感器，将传统设置在基材表面的电容器结构，改为垂直伸入基材内部的电容器结构，加大凹槽的深度即可增大电容器两个极板之间的感测面积，由此可大大缩小电容器在基材上的覆盖面积，满足了现代电子器件的轻薄化发展。

A semiconductor device having microelectromechanical systems devices with improved cavity pressure uniformity

본 개시내용의 다양한 실시예들은 반도체 디바이스에 관한 것이다. 반도체 디바이스는, 반도체 기판 위에 배치되는 인터커넥트 구조체를 포함한다. 유전체 구조체가 인터커넥트 구조체 위에 배치된다. 복수의 캐비티들이 유전체 구조체 내에 배치된다. 미세 전자 기계 시스템(MEMS) 기판이 유전체 구조체 위에 배치되고, 여기서 MEMS 기판은 복수의 이동가능 멤브레인들을 포함하고, 여기서 이동가능 멤브레인들은 각각 캐비티들 위에 놓인다. 복수의 유체 연통 채널들이 유전체 구조체 내에 배치되고, 여기서 유체 연통 채널들 각각은 캐비티들 중 2개의 이웃하는 캐비티들 사이에서 횡방향으로 연장되어, 캐비티들 각각이 서로 유체 연통된다. Various embodiments of the present disclosure relate to semiconductor devices. A semiconductor device includes an interconnect structure disposed over a semiconductor substrate. A dielectric structure is disposed over the interconnect structure. A plurality of cavities are disposed within the dielectric structure. A microelectromechanical system (MEMS) substrate is disposed over the dielectric structure, wherein the MEMS substrate comprises a plurality of movable membranes, each movable membrane overlying the cavities. A plurality of fluid communication channels are disposed within the dielectric structure, wherein each of the fluid communication channels extends transversely between two neighboring cavities of the cavities, such that each of the cavities is in fluid communication with each other.

자성 나노 입자 배열, 이의 제조방법 및 이를 이용한 자기저장매체

본 발명은 수직 자기이방성을 가지는 자성 나노 입자를 포함하는 나노 적층 구조물, 이의 제조방법 및 이를 이용한 자기저장매체에 관한 것으로, 보다 상세하게는 다공성 박막을 주형으로 하고 전기적 증착 방법을 통해 자성 나노 입자를 상기 박막의 동공 내에 증착시켜 나노 적층물을 제조함으로써, 상기 나노 입자의 간격이 균일하고 크기가 작으며, 나노 입자 간의 극성상호작용을 받지 않아 각각 자성을 가지뿐만 아니라 수직방향의 자성 특성을 구현할 수 있는 자성 나노 입자를 포함하는 나노 적층 구조물, 이의 제조방법 및 이를 이용한 자기저장매체에 관한 것이다. 박막 나노 적층 구조물, 자성 나노 입자, 메조 동공 박막, 나노자성체, 자기저장매체

Charge pump system, apparatus and method

本主题涉及电荷泵设备、系统和方法，其中，第一多个串联连接的电荷泵级被连接在电源电压节点和第一电路节点之间，其中，第一多个电荷泵级可操作用于在第一电路节点处产生第一电荷，第一电荷具有第一极性；以及，第二多个串联连接的电荷泵级被连接在电源电压节点和第二电路节点之间，其中第二多个电荷泵级可操作用于在第二电路节点处产生第二电荷，第二电荷具有第二极性。

Nano-pore is controllably made in nano solid material

在纳米材料中形成纳米孔的方法，在纳米材料的侧边缘内部的位置上如下来形成纳米孔成核位置：将选自离子束和中性原子束的第一能量束引导到该内部位置持续第一持续时间，其施加了第一束剂量，这导致从该内部位置上除去不超过5个内部原子以在该内部位置处产生具有多个边缘原子的纳米孔成核位置。然后通过将选自电子束、离子束和中性原子束的第二能量束引导到该纳米孔成核位置来在该纳米孔成核位置上形成纳米孔，该第二能量束具有除去该纳米孔成核位置上的边缘原子但是不从该纳米材料中除去体原子的束能量。

Method for producing a multi-mirror arrangement with a plurality of displaceable individual mirrors

Bei einem Verfahren zur Herstellung einer Vielspiegel-Anordnung (19) mit einer Vielzahl von verlagerbaren Einzelspiegeln (20) wird eine strahlungsreflektierende Beschichtung (28) auf die Vorderseite eines Wafers (34) aufgebracht, bevor die Einzelspiegel (20) aus dem Wafer (34) ausgelöst werden.

Controlled fabrication of nanopores in nanometer semiconductor materials

Plate-shaped substrate structured with ultrasonic lobes

Mit Ultraschallschwingläppen strukturiertes plattenförmiges Substrat (1) mit folgenden Merkmalen: das Substrat (1) weist eine erste Plattenseite (2) und eine dazu gegenüberliegende zweite Plattenseite (3) auf, das Substrat (1) weist quer zu den Plattenseiten (2, 3) eine Anzahl von Elementlöchern (4) auf, wobei die Anzahl der Elementlöcher (4) zumindest in einem Teilbereich des Substrates (1) zwischen 10 und 50 pro cm 2 liegt, die Elementlöcher (4) sind Durchgangslöcher, deren Durchmesser einen Median aufweisen, der im Bereich von 0,35 mm bis 1,2 mm, bevorzugt von 0,4 mm bis 1,1 mm liegt, wobei, bezogen auf eine Plattenseite (2, 3), eine Hauptmenge von mindestens 80% der Elementlöcher (4) einen Durchmesser aufweist, dessen Durchmesserabweichung von dem Median der Durchmesser in einem Intervall mit einer Breite von ≤ 20 µm liegt, wobei das Intervall nach unten begrenzt ist durch den 10%-Quantil und nach oben begrenzt ist durch den 90%-Quantil der Elementlöcher (4). Plate-shaped substrate (1) structured with ultrasonic lobes and having the following features: the substrate (1) has a first plate side (2) and a second plate side (3) opposite thereto, the substrate (1) has a number of element holes (4) transversely to the plate sides (2, 3), the number of element holes (4) being between 10 and 50 per cm 2 at least in a partial region of the substrate (1), the element holes (4) are through-holes whose diameters have a median which is in the range of 0.35 mm to 1.2 mm, preferably 0.4 mm to 1.1 mm, wherein, with respect to a plate side (2, FIG. 3), a major amount of at least 80% of the element holes (4) has a diameter whose diameter deviation from the median of the diameters is in an interval with a width of ≤ 20 μm, the interval being bounded below by the 10% quantile and is bounded above by the 90% quantile of the element holes (4).

Graphene pattern and process for preparing the same

그라펜 패턴 및 그의 형성방법이 제공된다. 상기 그라펜 패턴은 기판 상에 그라펜이 소정 형상으로 패턴화된 것으로서, 이는 기판 상에 소정 패턴의 그래파이트화 촉매를 형성한 후, 여기에 탄소계 물질을 접촉 및 열처리하여 형성될 수 있다. A graphene pattern and a method of forming the same are provided. The graphene pattern may be formed by patterning graphenes in a predetermined shape on a substrate, which is formed by forming a graphitizing catalyst having a predetermined pattern on a substrate, and then contacting and heat-treating the carbon-based material.

Process for sealing cavities with membranes

L’invention concerne un procédé de scellement de cavités (11) par des membranes, le procédé comprenant : a) la formation de cavités (11) agencées de manière matricielle, d’une profondeur p, d’une dimension caractéristique a, et espacées d’un espacement b ; b) la formation de membranes, scellant les cavités (11), par report d’un film de scellement ; le procédé comprend une étape a1), exécutée avant l’étape b), de formation d’un premier contour sur la face avant (10a) et/ou sur la face de scellement (16a), le premier contour comprenant une première tranchée (21) présentant une largeur L et une première profondeur p1, la formation du premier contour étant exécutée de sorte qu’à l’issue de l’étape b) les cavités (11) soient circonscritent par le premier contour, ledit premier contour étant à une distance G des cavités comprise entre un cinquième de b et cinq b. Figure pour l’abrégé : figure 10a. The invention relates to a method of sealing cavities (11) by membranes, the method comprising: a) forming cavities (11) arranged in a matrix manner, of depth p, of characteristic dimension a, and spaced apart. a spacing b; b) the formation of membranes, sealing the cavities (11), by transfer of a sealing film; the method comprises a step a1), executed before step b), of forming a first contour on the front face (10a) and / or on the sealing face (16a), the first contour comprising a first trench ( 21) having a width L and a first depth p1, the formation of the first contour being carried out so that at the end of step b) the cavities (11) are circumscribed by the first contour, said first contour being at a distance G of the cavities between one fifth of b and five b. Figure for the abstract: Figure 10a.

MICROELECTROMECHANICAL AND / OR NANOELECTROMECHANICAL DEVICE OFFERING INCREASED ROBUSTNESS

Dispositif microélectromécanique et/ou nanoélectromécanique comportant une partie fixe (4), au moins une partie suspendue (2) destinée à être mobile dans le plan dudit dispositif par rapport à la partie fixe (4) le long au moins d'une première direction (Y), un premier moyen de suspension (6) de ladite partie suspendue (2), ledit premier moyen de suspension (6) comportant deux éléments de suspension (8.1, 8.2) chaque élément de suspension (8.1, 8.2) comportant une première extrémité fixée directement à la partie suspendue (2) et une deuxième extrémité reliée à la partie fixe (4), chaque élément de suspension (8.1, 8.2) présentant une forme de demi-ellipse dans le plan et s'étendant entre la première extrémité et la deuxième extrémité, les deux éléments de suspension (8.1, 8.2) étant disposés l'un par rapport à l'autre de sorte à former une ellipse. Microelectromechanical and / or nanoelectromechanical device comprising a fixed part (4), at least one suspended part (2) intended to be movable in the plane of said device with respect to the fixed part (4) along at least a first direction ( Y), a first suspension means (6) of said suspended part (2), said first suspension means (6) comprising two suspension elements (8.1, 8.2) each suspension element (8.1, 8.2) comprising a first end attached directly to the suspended part (2) and a second end connected to the fixed part (4), each suspension element (8.1, 8.2) having the shape of a semi-ellipse in the plane and extending between the first end and the second end, the two suspension elements (8.1, 8.2) being arranged relative to each other so as to form an ellipse.

Method for transferring nanostructures

A method for transferring nanostructures includes providing a growth substrate and a number of nanostructures located on the growth substrate. The nanostructures are transferred by an adhesive layer from the growth substrate to a target substrate. The nanostructures are between the target substrate and the adhesive layer, and at least partial of nanostructures is in contact with a surface of the target substrate. The adhesive layer is covered by a metal layer. The adhesive layer together with the metal layer is separated from the nanostructures and the target substrate in an organic solvent by an external force, wherein the organic solvent permeates into an interface between the adhesive layer and the nanostructures.

Micromechanical component and method for its production

Das mikromechanische Bauelement ist an einer Oberfläche eines Substrats angeordnet. Unter einem Hohlraum (H) ist eine Gegenelektrode eines Kondensators einer Zelle angeordnet, die beispielsweise ein erster Teil einer unteren leitenden Schicht ist. Über dem Hohlraum (H) ist eine beispielsweise kreisförmige Membran angeordnet, die als Elektrode des Kondensators wirkt. Die Membran ist homogen und weist eine im wesentlichen gleichförmige Dicke auf. Die Membran ist beispielsweise Teil einer oberen leitenden Schicht, die sich vorzugsweise auf einen zweiten Teil der unteren leitenden Schicht abstützt. An den Hohlraum (H) schließt sich seitlich ein Ätzkanal (A) an, über den zur Erzeugung des Hohllraums (H) eine Opferschicht entfernt wird. Der Ätzkanal (A) weist eine vertikale Abmessung auf, die gleich einer vertikalen Abmessung des Hohlraums (H) ist. Ein Verschluß (V) grenzt von oben an den Ätzkanal (A) an und ist außerhalb der Membran angeordnet. Das Bauelement ist als Drucksensor geeignet. Es kann mehrere Zellen aufweisen, wobei eine Zelle an sechs nächste benachbarte Zellen angrenzt. The micromechanical component is arranged on a surface of a substrate. A counter electrode of a capacitor of a cell is arranged under a cavity (H), which is, for example, a first part of a lower conductive layer. A circular membrane, for example, is arranged above the cavity (H) and acts as an electrode of the capacitor. The membrane is homogeneous and has a substantially uniform thickness. The membrane is, for example, part of an upper conductive layer, which is preferably supported on a second part of the lower conductive layer. An etching channel (A) adjoins the cavity (H), via which a sacrificial layer is removed to create the cavity (H). The etching channel (A) has a vertical dimension which is equal to a vertical dimension of the cavity (H). A closure (V) adjoins the etching channel (A) from above and is arranged outside the membrane. The component is suitable as a pressure sensor. It ...

Nanostructure transfer method

一种纳米结构的转移方法，包括以下步骤：提供一生长基底，该生长基底表面具有一纳米结构层；提供一粘胶层覆盖所述纳米结构层；通过移动所述粘胶层和所述生长基底中至少一个，使所述粘胶层远离所述生长基底，从而使所述纳米结构层与所述生长基底分离，至少部分纳米结构层从所述粘胶层暴露出来；提供一目标基底，将该粘胶层与所述目标基底层叠设置，使所述纳米结构层位于所述粘胶层与所述目标基底之间，并与所述目标基底接触设置；在所述粘胶层远离目标基底的表面设置一金属层；提供一有机溶剂，使该有机溶剂从所述粘胶层与纳米结构层接触的界面渗透使所述粘胶层分解；采用外力使所述粘胶层连同所述金属层与所述纳米结构层及目标基底分离。

MEMS and MEMS array comprising movable structural elements

本发明涉及一种MEMS，该MEMS包括基板，该基板具有在基板平面上方升高的基板延伸部。该MEMS包括可移动结构元件、将可移动结构元件机械地连接到基板延伸部的第一弹簧元件、以及将可移动结构元件机械地连接到基板延伸部的第二弹簧元件。第一弹簧元件和第二弹簧元件形成可移动结构元件相对于基板延伸部的平行四边形引导件。

High aspect ratio microstructure and method of fabricating the same and high aspect ratio microstructure array and method of fabricating the same

본 발명에 의한 고종횡비 미세 구조물의 제조방법은, 투명 기판의 표면에 패턴 홈을 갖는 포토 마스크를 부착하는 포토 마스크 부착단계와, 포토 마스크의 표면에 네가티브 포토레지스트를 부착하는 포토레지스트 부착단계와, 투명 기판의 포토 마스크가 부착된 부분의 반대쪽에서 빛을 조사하여 패턴 홈을 통해 네가티브 포토레지스트로 조사되는 빛으로 네가티브 포토레지스트의 일부를 경화시키는 노광 단계와, 네가티브 포토레지스트의 노광되지 않은 부분을 제거하여 네가티브 포토레지스트가 경화되어 이루어진 미세 구조물을 드러내는 현상 단계를 포함하는 것을 특징으로 한다. 본 발명에 의하면, 포토리소그라피 공정을 이용하여 미세 구조물을 저렴하고 간편하게 제조할 수 있다. The method for manufacturing a high aspect ratio microstructure according to the present invention includes a photomask attaching step of attaching a photomask having a pattern groove to a surface of a transparent substrate, a photoresist attaching step of attaching a negative photoresist to a surface of the photomask, An exposure step of irradiating light on the opposite side of the transparent substrate to which the photomask is attached to cure a portion of the negative photoresist with light irradiated to the negative photoresist through the pattern groove, and removing an unexposed portion of the negative photoresist. The negative photoresist is characterized in that it comprises a development step of revealing the microstructure formed by curing. According to the present invention, microstructures can be manufactured at low cost and easily using a photolithography process.

Mixed-technology combination of programmable elements

Silicon nanowire chip and mass spectrum detection method based on silicon nanowire chip

本发明公开了一种硅纳米线芯片及基于硅纳米线芯片的质谱检测方法，检测方法，包括如下步骤：步骤一，制造硅纳米线芯片；将单晶硅片经表面洗涤预处理后经过金属辅助刻蚀、碱后刻蚀得到具有尖端的硅纳米线芯片；对硅纳米线芯片进行表面化学或纳米材料修饰；步骤二，硅纳米线芯片质谱性能评估；步骤三，顶端接触取样及原位离子化质谱检测；本发明充分利用硅纳米线芯片的纳米结构特性和半导体特性，将接触式萃取转印和免基质质谱检测集合于一体，大大简化了复杂样本的采集、预处理和检测过程；本发明制造出的硅纳米线芯片能够同时具备吸附、萃取功能与质谱检测功能，还能保留有空间异质性的样本的原位信息。

Microelectromechanical system (mems) on application specific integrated circuit (asic)

FIELD: electronics. SUBSTANCE: invention relates to components of electronic devices, namely, to methods and devices for assembly of packages for mobile devices. Package assembly includes an application specific integrated circuit (ASIC) and a micro-electromechanical system (MEMS) having an active and an inactive sides; the MEMS is connected directly with the ASIC through one or more inter-element connectors, MEMS, ASIC and one or more inter-element connectors form a cavity, such that the MEMS active section is within the cavity, the second MEMS and the second one or more inter-element connectors, herewith the second MEMS is connected directly with the ASIC through the second one or more inter-element connectors, herewith the second MEMS, the ASIC and the second one or more inter-element connectors form the second cavity between the second MEMS, the ASIC and the second one or more inter-element connectors, and the inter-element connection of the first one or more connections is connected to the redistribution level (RDL) of the ASIC. EFFECT: invention ensures reduction of dimensions and reduction of costs and production time. 20 cl, 11 dwg, 25 ex РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (51) МПК H01L 25/18 (13) 2 602 746 C2 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ (21)(22) Заявка: ИЗОБРЕТЕНИЯ К ПАТЕНТУ 2014152357/28, 28.06.2013 (24) Дата начала отсчета срока действия патента: 28.06.2013 (72) Автор(ы): ОФНЕР Геральд (DE), МЕЙЕР Торстен (DE) (73) Патентообладатель(и): ИНТЕЛ АйПи КОРПОРЕЙШН (US) (43) Дата публикации заявки: 20.07.2016 Бюл. № 20 R U Приоритет(ы): (22) Дата подачи заявки: 28.06.2013 (45) Опубликовано: 20.11.2016 Бюл. № 32 (85) Дата начала рассмотрения заявки PCT на национальной фазе: 23.12.2014 2 6 0 2 7 4 6 (56) Список документов, цитированных в отчете о поиске: US 2008/0157238 A1, 03.07.2008;GB 2493246 A, 30.01.2013. WO 2012/051340 A1, 19.04.2012. US 2005/0189635 A1, 01.09.2005. US 2009/0101998 A1, 23.04.2009. RU 2007107952 ...

Method for micro-and nano-fabrication by selective template removal

公开了一种移除薄膜材料的、否则会均匀地沉积在一模板上的选定部分的方法。该方法依赖于一适当的灌封材料来封装并移除沉积在所述模板顶点上的材料。该方法可在单个处理步骤中产生一个和/或两个器件：(i)具有由模板顶点形状限定的微米孔和/或纳米孔的薄膜材料，以及(ii)通过模板顶点的设计而成形和定位在灌封材料中的微米和/或纳米颗粒。用这种方法制成的器件可以应用于机械、化学、电气和光学器件的制造中。

Semiconductor device, display device, and electronic apparatus

根据本公开的一个实施例的半导体器件设置有：衬底；多个结构，被布置为矩阵并具有平面部；以及多个压电致动器，其设置在衬底上，并且分别沿着垂直于衬底的一个表面的方向移动结构。

Method for the production of conical nanostructures on substrate surfaces

The invention relates to a method for producing conical nanostructures on substrate surfaces, in particular in optical devices, solar cells, and sensors. The method according to the invention comprises at least the steps of: a) providing a substrate surface covered with nanoparticles; b) etching the substrate surface covered with nanoparticles, wherein the nanoparticles act as an etching mask and the etching parameters are set in such a way that hyperboloid structures are produced underneath the nanoparticles; c) breaking the hyperboloid structures in the region of the smallest diameter by exerting mechanical forces, wherein the structures remaining on the substrate surface have a conical shape.

Charge pump system, device and method

本主题涉及电荷泵设备、系统和方法，其中多个串联连接的电荷泵级被连接在电源电压节点和主电路节点之间，以及放电电路被连接到多个电荷泵级，其中放电电路被配置为选择性地从所述主电路节点移除电荷。

Micro-channel structure method and apparatus

提供一种形成用在生物传感装置中的微通道结构的方法。提供具有微通道的第一构造的主结构，微通道的第一构造具有对应的第一液流特性。使用流体喷射工艺将一个或多个材料区域沉积在主结构上，以便将第一构造改性成与具有与第一液流特性不同的对应的第二液流特性的第二构造。还描述了使用该方法形成的功能生物传感装置。

Measurement system

A system for performing measurements on a biological subject, the system including: at least one substrate including a plurality of plate microstructures configured to breach a stratum corneum of the subject; at least one sensor operatively connected to at least one microstructure, the at least one sensor being configured to measure response signals from the at least one microstructure; and, one or more electronic processing devices configured to: determine measured response signals; and, at least one of: provide an output based on measured response signals; perform an analysis at least in part using the measured response signals; and, store data at least partially indicative of the measured response signals.

A system for determining fluid level in a biological subject

A system for performing fluid level measurements on a biological subject, the system including at least one substrate including a plurality of microstructures configured to breach a stratum corneum of the subject, at least some microstructures including an electrode, a signal generator operatively connected to at least one microstructure to apply an electrical stimulatory signal to the at least one microstructure and at least one sensor operatively connected to at least one microstructure, the at least one sensor being configured to measure electrical response signals from at least one microstructure. The system also includes one or more electronic processing devices that determine measured response signals, the response signals being at least partially indicative of a bioimpedance and perform an analysis at least in part using the measured response signals to determine at least one indicator at least partially indicative of fluid levels in the subject.

Method for processing pattern structure, method for manufacturing electronic device, and processing liquid for suppressing collapse of pattern structure

本發明提供一種可抑制圖案構造的倒塌的圖案構造的處理方法、包含所述處理方法的電子元件的製造方法及圖案構造的倒塌抑制用處理液。所述圖案構造的處理方法對包含無機材料的圖案構造賦予含有氟系聚合物的處理液，所述氟系聚合物具有含氟原子的重複單元。

Substrate bonding method and MEMS component

Ultrasonic transducer element, method for manufacturing same, and ultrasonic image pickup device

This ultrasonic transducer element is configured by being provided with: a substrate; a lower electrode formed on a first main surface of the substrate; a first insulating film formed on the lower electrode; a first cavity layer formed on the first insulating film; a second insulating film formed on the first cavity layer; an upper electrode, which is formed on the second insulating film, and is disposed at a position overlapping the first cavity layer when viewed from the upper surface; a third insulating film formed on the upper electrode; a second cavity layer formed on the third insulating film; a fourth insulating film formed on the second cavity layer; a fixed section configured from the second to fourth insulating films surrounding the outer periphery of the first cavity layer when viewed from the upper surface of the first main surface of the substrate; a movable section, which is a membrane region further toward the inside than the second cavity layer, said membrane being configured from the upper electrode and the second to fourth insulating films formed on the first cavity layer; and a first connecting section, and a second connecting section laminated by being separated from the first connecting section, as connecting sections that connect the movable section and the fixed section to each other, said connecting sections being configured from the second to fourth insulating films.

Substrate bonding method and electronic component thereof

A substrate bonding method has a film forming step of forming an insulating film for bonding in such a manner that an SiO 2 film made of TEOS is deposited on at least one of a first substrate and a second substrate by a CVD method, and a bonding step of bonding the first substrate and the second substrate with the insulating film for bonding being interposed between the first substrate and the second substrate.

Environmental sensor and manufacturing method thereof

An environmental sensor and manufacturing method thereof. The environmental sensor comprises: a substrate (1) comprising at least one recess (1a) disposed at an upper portion of the substrate (1); and a sensitive film layer (3) disposed above the substrate (1), comprising a fixed portion (3b) fixed on an end surface of the substrate (1) and a bent portion (3a) configured to extend inside the recess (1a). The bent portion (3a) and a side wall of the recess (1a) form a capacitor configured to detect a signal. The bent portion (3a), fixed portion (3b), and the recess (1a) form a closed cavity. A conventional capacitive structure configured on a substrate surface is changed to a capacitive structure of the environmental sensor vertically extending into the inside of the substrate, increasing a depth of the recess, and in turn, increasing a sensing area between two polar plates of the capacitor, significantly shrinking a coverage area of the capacitor on the substrate, and satisfying a requirement of a modern compact electronic component.

Processable self-organizing nanoparticle

A method of forming a composition includes adding together a plurality of particle brush systems wherein each of the particle brush systems includes a particle and a polymer brush including a plurality of polymer chains attached to the particle. The plurality of polymer chains of the polymer brush exhibit two chain conformations as the degree of polymerization of the polymer chains increases so that the polymer brush includes a concentrated polymer brush region with stretched polymer chains and a semi-dilute polymer brush region with relaxed chains that is radially outside of the concentrated polymer brush region. The degree of polymerization of the polymer brush is no less than 10% less than a critical degree of polymerization and no more than 20% greater than the critical degree of polymerization. The critical degree of polymerization is defined as the degree of polymerization required to achieve a transition from the concentrated polymer brush region to the semi-dilute polymer brush region.

Controlled fabrication of nanopores in nanometric solid state materials

在纳米材料中形成纳米孔的方法，在纳米材料的侧边缘内部的位置上如下来形成纳米孔成核位置：将选自离子束和中性原子束的第一能量束引导到该内部位置持续第一持续时间，其施加了第一束剂量，这导致从该内部位置上除去不超过5个内部原子以在该内部位置处产生具有多个边缘原子的纳米孔成核位置。然后通过将选自电子束、离子束和中性原子束的第二能量束引导到该纳米孔成核位置来在该纳米孔成核位置上形成纳米孔，该第二能量束具有除去该纳米孔成核位置上的边缘原子但是不从该纳米材料中除去体原子的束能量。