ИНТЕРФЕРЕНЦИОННЫЙ ОПТИЧЕСКИЙ МОДУЛЯТОР, ПРИМЕНЯЮЩИЙ ЗАПОЛНЯЮЩИЙ МАТЕРИАЛ И СПОСОБ ИЗГОТОВЛЕНИЯ

... 1. Устройство с микроэлектромеханическими системами, содержащее подложку; деформируемый слой; поддерживающую структуру, поддерживающую деформируемый слой; подвижный проводник, расположенный между подложкой и деформируемым слоем; и соединитель, прикрепляющий подвижный проводник к деформируемому слою; в котором по меньшей мере, один из соединителя и поддерживающей структуры содержит первый компонент и второй компонент, по меньшей мере часть первого компонента располагается по периметру, по меньшей мере, одного из соединителя и поддерживающей структуры; и первый компонент содержит электроизолирующий заполняющий материал. 2. Устройство по п.1, в котором поддерживающая структура содержит множество поддерживающих опор, в котором поддерживающие опоры поддерживаются подложкой и поддерживают деформируемый слой. 3. Устройство по п.1, в котором заполняющий материал содержит самовыравнивающий материал. 4. Устройство по п.1, в котором заполняющий материал содержит материал, выбранный из группы, состоящей ...

СИСТЕМА И СПОСОБ ДЛЯ УСТРОЙСТВА ОТОБРАЖЕНИЯ С АКТИВНЫМ УСИЛИВАЮЩИМ ВЕЩЕСТВОМ

... 1. Устройство отображения, содержащее прозрачную подложку, интерференционный модулятор, предназначенный для модуляции света, проходящего через прозрачную подложку, объединительную плату, прикрепленную к прозрачной подложке, активное усиливающее вещество, находящееся в контакте с объединительной платой и предназначенное для обеспечения структурного усиления объединительной платы. 2. Устройство отображения по п.1, отличающееся тем, что активное усиливающее вещество является десикантом. 3. Устройство отображения по п.2, отличающееся тем, что десикант расположен в слабой точке объединительной платы. 4. Устройство отображения по п.3, отличающееся тем, что слабой точкой объединительной платы является угол углубления в объединительной плате. 5. Устройство отображения по п.2, отличающееся тем, что десикант содержит одно вещество, выбранное из группы, состоящей из цеолитов, сульфата кальция, оксида кальция, силикагеля, молекулярных сит, поверхностных абсорбентов, объемных абсорбентов, химических ...

Mikromechanisches Bauteil für eine kapazitive Sensorvorrichtung und Herstellungsverfahren für ein mikromechanisches Bauteil für eine kapazitive Sensorvorrichtung

Herstellungsverfahren für ein mikromechanisches Bauteil für eine kapazitive Sensorvorrichtung mit den Schritten:Bilden einer ersten Elektrode (10) zumindest teilweise aus einer ersten Halbleiter- und/oder Metallschicht (13); undAbscheiden zumindest einer Isolierschicht (18) über der ersten Elektrode (10);Bilden zumindest einer zu der ersten Elektrode (10) ausgerichteten Innenseite einer Schicht (20) einer zweiten Elektrode (36) aus einer zweiten Halbleiter- und/oder Metallschicht (21) auf der Isolierschicht (18), wobei durch die die Innenseite bildende Schicht (20) der zweiten Elektrode (36) durchgehende Aussparungen (22) strukturiert werden;Bilden eines Hohlraums (26) zwischen der ersten Elektrode (10) und der die Innenseite bildende Schicht (20) der zweiten Elektrode (36) durch Wegätzen eines Teilbereichs zumindest der Isolierschicht (18) durch die durchgehenden Aussparungen (22) in der die Innenseite bildende Schicht (20) der zweiten Elektrode (36) hindurch; undAbdichten der durchgehenden ...

MEMS device and process

A MEMS transducer with a flexible membrane 501 and a vent structure comprising at least one moveable portion 502 which in response to differential pressure across the vent structure tilts such that one edge of the moveable portion 502 deflects below the plane of a membrane 501, whilst an opposite edge of the moveable portion 502 deflects above the plane of the membrane 501. In response to differential pressure across the vent, the moveable portion 502 may rotate about two axes (R1, Fig. 5a) & R2 to allow a variable acoustic impedance. The vent bleed holes may allow for pressure equalisation between cavities and may thus prevent damage or overload of the diaphragm 501. Rotation may expose an aperture which provides a flow path for pressure change. The moveable portion 502 may be connected to the membrane 501 by a joint structure. The microelectromechanical transducer may use capacitive sensing with electrodes and may be utilised as a microphone in mobile telephones, computing devices or ...

TORSION BAR FOR MEMS STRUCTURE

IMPROVED ACTUATOR WITH THERMAL BEND

SYSTEM AND METHOD FOR DISPLAY DEVICE WITH REINFORCING SUBSTANCE

A package structure and method of packaging an interferometric modulator with a reinforcing substance to help support the integrity of the package. In some embodiments the reinforcing substance is a desiccant integrated into the backplate or the transparent substrate.

A method of manufacturing a micromechanical timepiece piece and said micromechanical timepiece.

L’invention se rapporte à un procédé de fabrication d’une pièce micromécanique horlogère à partir d’un substrat à base de silicium (1), comprenant, dans l’ordre, les étapes de: a) former des pores (2) à la surface d’au moins une partie d’une surface dudit substrat à base de silicium (1) d’une profondeur déterminée, b) remplir entièrement lesdits pores (2) d’un matériau choisi parmi le diamant, le carbone-diamant (DLC), l’oxyde de silicium, le nitrure de silicium, des céramiques, des polymères et leurs mélanges, afin de former dans les pores (2) une couche dudit matériau d’une épaisseur au moins égale à la profondeur des pores (2). L’invention concerne également une pièce micromécanique horlogère comprenant un substrat à base de silicium (1) qui présente, à la surface d’au moins une partie d’une de ses surfaces, des pores (2) d’une profondeur déterminée, lesdits pores (2) étant entièrement remplis d’une couche d’un matériau choisi parmi le diamant, le carbone-diamant (DLC), l’oxyde de silicium ...

A method of manufacturing a micromechanical timepiece piece and said micromechanical timepiece.

L’invention se rapporte à un procédé de fabrication d’une pièce micromécanique horlogère comprenant un substrat à base de silicium (1), comprenant, dans l’ordre, les étapes de: a) former des pores (2) à la surface d’au moins une partie d’une surface dudit substrat à base de silicium (1) d’une profondeur déterminée, b) remplir entièrement lesdits pores (2) d’un matériau choisi parmi le diamant, le carbone-diamant (DLC), l’oxyde de silicium, le nitrure de silicium, des céramiques, des polymères et leurs mélanges, afin de former dans les pores (2) une couche dudit matériau d’une épaisseur au moins égale à la profondeur des pores (2), la forme finale du substrat à base de silicium (1) en fonction de la pièce micromécanique horlogère à fabriquer étant donnée avant l’étape a) ou après l’étape b). L’invention concerne également une pièce micromécanique horlogère comprenant un substrat à base de silicium (1) qui présente, à la surface d’au moins une partie d’une de ses surfaces, des pores (2) d ...

A method of manufacturing a silicon balance for timepieces.

L’invention se rapporte à un procédé de fabrication d’un spiral en silicium pour l’horlogerie d’une raideur finale déterminée comportant les étapes de fabrication d’un spiral selon des dimensions surépaissies, de détermination de la raideur initiale du spiral formé afin de retirer le volume de matériau pour obtenir le spiral aux dimensions nécessaires à ladite raideur finale déterminée.

Multi-layer composite backplate for micromechanical microphone

Movable structure and micro-mirror element using the same

A movable structure wherein the tensile stiffness and bending stiffness are increased while the torsional stiffness of the hinge part is suppressed, thus the stability of the oscillating movement of a movable plate is increased. A ladder-shaped hinge part (3) having open sections (3c) is formed by a pair of support columns (3a) and crosspieces (3b) that cross between this pair of support columns (3a), thus rotatably supporting a movable plate (2). By means of open sections (3c) of the hinge part (3), the tensile stiffness and bending stiffness are increased, while the torsional stiffness about the rotation axis of hinge part (3) is suppressed.

FLEXIBLE MEMBRANE COMPRISING OF THE NOTCHES

Production process for a semiconductor element especially a micromechanical element such as a sensor forms a membrane over a cavity on a structured layer by epitaxy

Procédé de fabrication d'un composant semi-conducteur notamment d'un capteur à membrane micromécanique ainsi que du semi-conducteur obtenu selon ce procédé.

ELECTRONIC MICROCOMPONENT OF the CAPACITY TYPE VARIABLE OR MICROSWITCH, OR MANUFACTORING PROCESS Of SUCH a COMPONENT

Procédé de fabrication de microcomposants électroniques, du type capacité variable ou microswitch, comprenant une armature fixe (1) et une membrane (20) déformable situées en regard l'une de l'autre, caractérisé en en ce qu'il comporte les étapes suivantes, consistant : . à déposer une première couche métallique sur une couche d'oxyde (2), ladite première couche métallique étant destinée à former l'armature la plaque fixe; . à déposer un ruban métallique (10, 11) sur au moins une partie de la périphérie et de part et d'autre de l'armature fixe (1), ledit ruban étant destiné à servir d'espaceur entre l'armature fixe (1) et la membrane déformable (20); . à déposer une couche de résine sacrificielle (15) sur au moins la superficie de ladite armature fixe (1); . à générer par lithographie une pluralité de caissons, sur la surface de ladite couche de résine sacrificielle; . à déposer par électrolyse, à l'intérieur des caissons formés sur la résine sacrificielle (15), au moins une zone métallique ...

Method for manufacturing a micromechanical timepiece part and said micromechanical timepiece part

Display apparatus incorporating corrugated beam actuators

This disclosure provides systems, methods and apparatus for shutter-based EMS light modulators controlled by electrode actuators that include complementary sets of corrugations or teeth along the opposing beams of the actuators. The complementary sets of corrugations substantially engage one another when drawn together via an actuation voltage. By applying the actuation voltage across the opposing beams of such an actuator, the beams are drawn together both by the electromotive force resulting from the electric field acting between the portions of the beams that are substantially perpendicular to the direction of actuation of the actuator, and by fringing fields between the sides of the corrugations, which are substantially parallel to the direction of actuation. The additional fringing fields provide for increased electromotive force for a given input voltage.

Semiconductor device package and method of manufacturing the same

The present disclosure relates to a semiconductor device package. The semiconductor device package includes a substrate, a support structure, an electronic component and an adhesive. The support structure is disposed on the substrate. The electronic component is disposed on the support structure. The adhesive is disposed between the substrate and the electronic component and covers the support structure. A hardness of the support structure is less than a hardness of the electronic component.

MICRO-ELECTROMECHANICAL SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF

The micro-electromechanical semiconductor component is provided with a first semiconductor substrate (1), which has an upper face, and a second semiconductor substrate (5), which has an upper face. Both semiconductor substrates (1, 5) are bonded resting on the upper faces thereof. A cavity (4) is introduced into the upper face of at least one of the two semiconductor substrates (1, 5). The cavity (4) is defined by lateral walls (3) and opposing ceiling and floor walls, which are formed by the two semiconductor substrates (1, 5). The ceiling or the floor wall acts as a reversibly deformable membrane and an opening (98) extending through the respective semiconductor substrate (1, 5) is arranged in the other of said two walls of the cavity (4).

REFLECTIVE SPATIAL LIGHT MODULATOR WITH HIGH STIFFNESS TORSION SPRING HINGE

A spatial light modulator for use in display applications. The spatial light modulator includes a support substrate and a flexible member coupled to the support substrate. The spatial light modulator also includes a mirror plate coupled to the flexible member and characterized by an activated position. The mirror plate is adapted to rotate in relation to the flexible member from the activated position to a second activated position in a time less than 6.0 µs.

MICROMECHANICAL COMPONENT COMPRISING A MEMBRANE AND METHOD FOR THE PRODUCTION OF SAID TYPE OF COMPONENT

The invention relates to a micromechanical component having a layered structure on a semi-conductor substrate (8). The layered structure comprises at least one dielectric membrane layer (30, 34) which is arranged above a support structure (28) which is located in the semi-conductor substrate (8). The support structure (28) is made of one or several hollow columns (26) which are made of, essentially, silicon oxide. The invention also relates to a method for producing said type of micromechanical component. According to the invention, the support structure (28) is formed and/or will be formed by one or several hollow columns (26) which are made, essentially, from silicon oxide.

STIFFENED SURFACE MICROMACHINED STRUCTURES AND PROCESS FOR FABRICATING THE SAME

Stiffened surface micromachined structures and a method to fabricate the same. A silicon substrate (10) is first etched to produce a mold containing a plurality of trenches or grooves (14) in a lattice configuration. Sacrificial oxide (15) is then grown on the silicon substrate (10) and then a stiffening member (16) (silicon nitride) is deposited over the surface of the substrate, thereby backfilling the grooves with silicon nitride. The silicon nitride is patterned to form mechanical members and metal (40) is then deposited and patterned to form the leads and capacitors for electrostatic actuation of mechanical members. The underlying silicon and sacrificial oxides are removed by etching the mold from underneath the fabricated micromachined devices, leaving free-standing silicon nitride devices with vertical ribs. The devices exhibit increased out-of-plan bending stiffness because of the presence of stiffening ribs. Silicon nitride biaxial pointing mirrors with stiffening ribs are also ...

MOVABLE STRUCTURE AND MICRO-MIRROR ELEMENT USING THE SAME

A movable structure wherein the tensile stiffness and bending stiffness are increased while the torsional stiffness of the hinge part is suppressed, thus the stability of the oscillating movement of a movable plate is increased. A ladder-shaped hinge part (3) having open sections (3c) is formed by a pair of support columns (3a) and crosspieces (3b) that cross between this pair of support columns (3a), thus rotatably supporting a movable plate (2). By means of open sections (3c) of the hinge part (3), the tensile stiffness and bending stiffness are increased, while the torsional stiffness about the rotation axis of hinge part (3) is suppressed.

Scanning device and fabrication method thereof

A scanning device includes a mirror unit formed on a substrate so as to be pivotable centering around one axis for adjusting the direction of reflected light; a support frame formed at one surface of the mirror unit for preventing dynamic deflection of the mirror unit and supporting the mirror unit; and a driving unit provided on the substrate and driving the mirror unit. Thus, a dynamic deflection phenomenon does not occur when the mirror unit is pivoted centering around the pivoting axis. Accordingly, stable operation is possible and the angle of rotation of the mirror unit can be accurately adjusted, so that the scanning device can be effectively used in a high-speed precision scanning system.

MOVING STRUCTURE AND MICRO-MIRROR DEVICE USING THE SAME

In a moving structure, stability of swing motion of a moving plate is increased by enhancing tensional rigidity or flexural rigidity while restraining torsion rigidity of the hinge units. The hinge units of ladder shape with honeycombed portions are formed by twin supporting rods and crosspieces bridged between the twin supporting rods so as to support the moving plate rotatably. The tensional rigidity or the flexural rigidity is increased while restraining the torsion rigidity of the hinge units by the honeycombed portions of the hinge units.

ELECTRONIC DEVICE, PHYSICAL QUANTITY SENSOR, PRESSURE SENSOR, VIBRATOR, ALTIMETER, ELECTRONIC APPARATUS, AND MOVING OBJECT

A physical quantity sensor includes a substrate, a piezoresistive element that is arranged on one face side of the substrate, a wall portion that is arranged to surround the piezoresistive element on the one face side of the substrate in a plan view of the substrate, a ceiling portion that is arranged on the opposite side of the wall portion from the substrate and constitutes a cavity portion with the wall portion, and an inside beam portion that is arranged on the substrate side of the ceiling portion and includes a material of which the thermal expansion rate is smaller than the thermal expansion rate of the ceiling portion.

MICROELECTROMECHANICAL SYSTEM DEVICES HAVING CRACK RESISTANT MEMBRANE STRUCTURES AND METHODS FOR THE FABRICATION THEREOF

Methods for fabricating crack resistant Microelectromechanical (MEMS) devices are provided, as are MEMS devices produced pursuant to such methods. In one embodiment, the method includes forming a sacrificial body over a substrate, producing a multi-layer membrane structure on the substrate, and removing at least a portion of the sacrificial body to form an inner cavity within the multi-layer membrane structure. The multi-layer membrane structure is produced by first forming a base membrane layer over and around the sacrificial body such that the base membrane layer has a non-planar upper surface. A predetermined thickness of the base membrane layer is then removed to impart the base membrane layer with a planar upper surface. A cap membrane layer is formed over the planar upper surface of the base membrane layer. The cap membrane layer is composed of a material having a substantially parallel grain orientation.

MICROELECTROMECHANICAL MICROPHONE

This disclosure provides systems, methods and apparatus including microelectromechanical system microphones. In one aspect, the systems include a substrate made of a low dielectric material, such as glass. A layer of semiconductor material extends, substantially continuously over a surface of the substrate and includes an array of display elements that modulate light to form an image and a movable diaphragm that detects acoustic signals. The diaphragm is held away from the substrate by springs that include beams having an aspect ratio of about four to one. 1. A microphone , comprisinga substrate,a plurality of anchors attached to the substrate and extending away from the substrate,a diaphragm, anda plurality of springs each having a first end connected to a respective anchor and a second end connected to the diaphragm to hold the diaphragm away from the substrate, and each having a beam with a cross-section having an aspect ratio of greater than 4:1 and extending from the anchor to the diaphragm.2. The microphone of claim 1 , wherein the aspect ratio is between 4:1 and 16:1.3. The microphone of claim 1 , wherein the substrate comprises a low dielectric material.4. The microphone of claim 1 , further comprising a lip facing the substrate and extending along a peripheral edge of the diaphragm.5. The microphone of claim 1 , further comprising a rib connected to a peripheral edge of the diaphragm to reduce warping of the substrate.6. The microphone of claim 1 , further comprising a plurality of apertures formed on the diaphragm to reduce air resistance as the diaphragm moves toward the substrate.7. The microphone of claim 6 , further comprising a wall formed along a peripheral edge of an aperture and facing the substrate.8. The microphone of claim 1 , wherein one of the plurality of springs includes two parallel beams joined at respective ends of the beams to form a flexible connector.9. The microphone of claim 1 , wherein the beam and the diaphragm are integrally ...

MEMS SENSOR AND METHOD FOR MANUFACTURING A MEMS SENSOR

A MEMS sensor, including a substrate, and at least three functional layers, which are connected to the substrate on top of one another and spaced apart from one another. A first of the at least three functional layers is deflectably situated. A first electrode, which includes at least two areas being situated at the first functional layer. A first area of the first electrode together with a second electrode of a second of the at least three functional layers form a first capacitance, and a second area of the first electrode together with at least one area of a third electrode of a third functional layer form a second capacitance. The electrodes are situated in such a way that, upon a change in the distance of the electrodes of the first capacitance, a contrary change in the distance of the electrodes of the second capacitance takes place.

Multi-zone microstructure spring

A method to create a multi-zone microstructure spring includes releasing a buckling layer from a substrate, wherein the buckling layer displaces into a curved shape after the releasing. The buckling layer is displaced, relative to the substrate, through at least one of a first zone, a second zone, and a third zone, wherein the buckling layer provides positive stiffness in the first zone, zero stiffness in a second zone, and negative stiffness in a third zone, and the buckling layer must pass through the first zone to reach the second zone and the buckling layer must pass through the second zone to reach the third zone. A multi-zone microstructure spring includes a substrate and a buckling layer. The buckling layer has a surface area. The buckling layer has a positive stiffness in a first zone, zero stiffness in a second zone, and a negative stiffness in a third zone. The buckling layer must pass through the first zone to reach the second zone and the buckling layer must pass through the ...

Device and method of fabricating such a device

There is disclosed a device and method for fabricating such a device. The device includes cavities formed in a substrate. A laminated membrane is mounted to the substrate and spans the cavities. The laminated membrane includes a layer of a flexible material, typically a polymer, and a layer of a two-dimensional material that is typically graphene.

MIRROR UNIT AND OPTICAL MODULE

A mirror unit 2 includes a mirror device 20 including a base 21 and a movable mirror 22, an optical function member 13, and a fixed mirror 16 that is disposed on a side opposite to the mirror device 20 with respect to the optical function member 13. The mirror device 20 is provided with a light passage portion 24 that constitutes a first portion of an optical path between the beam splitter unit 3 and the fixed mirror 16. The optical function member 13 is provided with a light transmitting portion 14 that constitutes a second portion of the optical path between the beam splitter unit 3 and the fixed mirror 16. A second surface 21b of the base 21 and a third surface 13a of the optical function member 13 are joined to each other.

MICRO-ELECTROMECHANICAL SEMICONDUCTOR COMPONENT

SEMICONDUCTOR SENSOR COMPONENT

System and method for protecting microelectromechanical systems array using back-plate with non-flat portion

Disclosed is an electronic device utilizing interferometric modulation and a package of the device. The packaged device includes a substrate 101, an interferometric modulation display array 111 formed on the substrate 101, and a back-plate 130. The back-plate is placed over the display array 111 with a gap 124 between the back-plate and the display array. The depth of the gap may vary across the back-plate. The back-plate can be curved or have a recess on its interior surface facing the display array. Thickness of the back-plate may vary. The device may include reinforcing structures which are integrated with the back-plate.

Methods of fabricating mems with a carrier for patterned mechanical strips and devices formed by same

Methods of fabricating a microelectromechanical systems (MEMS) device with a carrier for patterned mechanical strips and MEMS devices formed by the same are disclosed. In one embodiment, a MEMS device is fabricated by laminating a front substrate and a carrier, each of which has components preformed thereon. The front substrate is provided with stationary electrodes formed thereover. A carrier including movable electrodes formed thereover is attached to the front substrate. The movable electrodes are formed on the carrier by, for example, deposition and patterning. The carrier of some embodiments is released after transferring the movable electrodes to the front substrate. In other embodiments, the carrier stays over the front substrate, and serves as a backplate for the MEMS device. The methods not only reduce the manufacturing costs, but also provide a higher yield. The resulting MEMS devices can trap smaller volumes between laminated substrates and are less susceptible to pressure variations ...

Verfahren zum Herstellen einer Zwischenkomponente in einer mikromechanischen Fabry-Perot-Interferometervorrichtung, Verfahren zum Herstellen einer mikromechanischen Fabry-Perot-Interferometervorrichtung und mikromechanische Fabry-Perot-Interferometervorrichtung

Die vorliegende Erfindung schafft ein Verfahren zum Herstellen einer Zwischenkomponente (Z, Z1, ..., Zn) in einer mikromechanischen Fabry-Perot-Interferometervorrichtung (FPI) umfassend ein Aufbringen (S1b) einer ersten Opferschicht (O1) auf einem Substrat (Sub);- Aufbringen (S2) einer zweiten Opferschicht (02) zumindest bereichsweise auf die erste Opferschicht (O1); ein Strukturieren (S3) der zweiten Opferschicht (02) in zumindest zwei Teilbereiche (02-1, 02-2, ..., O2-n) und dabei Einbringen von Gräben (G1) in die zweite Opferschicht (02), welche sich bis zur ersten Opferschicht (O1) erstrecken; ein Aufbringen (S4) einer dritten Opferschicht (03) zumindest bereichsweise auf die Teilbereiche (02-1, 02-2, ..., O2-n) der zweiten Opferschicht (02) und in die Gräben (G); ein Erzeugen (S5) von zumindest einem Durchgangsloch (D) in der dritten Opferschicht (03) und über zumindest einem der Teilbereiche (02-1, 02-2, ..., O2-n) der zweiten Opferschicht (02), wobei sich das Durchgangsloch (D) durch ...

Piezoresistive pressure sensor device

A microelectromechanical system (MEMS) pressure sensor has a diaphragm with space piezoresitive elements forming a Wheatstone bridge. The linearity is improved by using a cross-stiffener formed of orthogonal beam sections, formed as part of the top of the diaphragm. The piezoresistors are formed in anchors at each end of the beam sections. An epitaxial layer may be etched to form the top section, with the reverse of a silicon substrate etched to form a cavity in order to manufacture the diaphragm. The perimeter of the diaphragm on the cross-stiffener side may be larger, in the form of a closed polygon.

Piezoresistive pressure sensor device

MEMS device and process

A MEMS transducer comprising a flexible membrane 501 with a vent structure comprising at least one moveable portion 502 which, in response to differential pressure across the vent, is rotatable about two axes of rotation R1, R2 which are in the plane of the membrane 501. The vent bleed holes allow for pressure equalisation between cavities and the double hinge reduces the effect of high pressure impulses by utilising a double hinge thus preventing damage or overload of the diaphragm 501. The dual axes may allow a variable acoustic impedance. Rotation about R1 may cause deflection away from the membrane plane, whilst rotation about R2 may cause tilting, exposing an aperture which provides a flow path for pressure change. A joint or beam between the triangular, rectangular, or square shaped membrane 501 and flap 502 may be provided off-centre along an edge. The microeletromechanical transducer may use capacitive sensing with electrodes and may be utilised as a microphone in mobile telephones ...

A microelectromechanical device having a stiffened support beam, and methods of forming stiffened support beams in mems

SYSTEM AND METHOD FOR PROTECTING MICROELECTROMECHANICAL SYSTEMS ARRAY USING BACK-PLATE WITH NON-FLAT PORTION

Disclosed is an electronic device utilizing interferometric modulation and a package of the device. The packaged device includes a substrate 101, an interferometric modulation display array 111 formed on the substrate 101, and a back-plate 130. The back-plate is placed over the display array 111 with a gap 124 between the back-plate and the display array. The depth of the gap may vary across the back-plate. The back-plate can be curved or have a recess on its interior surface facing the display array. Thickness of the back-plate may vary. The device may include reinforcing structures which are integrated with the back-plate.

DEVICE AND SENSORS FOR ENERGY ACCUMULATION AND METHODS FOR THEIR PRODUCTION AND USE

Micro mechanical devices with an improved recess or cavity structure

Micro rocking device having torsion bar

METHOD OF MANUFACTURING A SEMICONDUCTOR COMPONENT AND RESULTING COMPONENT, IN PARTICULAR A SENSOR MEMBRANE

MICROCOMPONENT PROVIDED With ONE SURGES DELIMITEE BY a CAP HAS MECHANICAL RESISTANCE AMELIOREE

MICROCOMPONENT PROVIDED With ONE SURGES DELIMITEE BY a CAP HAS RESISTANCE MECANIQUEAMELIOREE

Il s'agit d'un microcomposant comportant une cavité (13) délimitée par un capot (12) enfermant une partie active (10) supportée par un substrat (11). Le capot (13) comprend une paroi sommitale (12a) comportant des moyens de rigidification avec au moins un élément de rigidification en saillie (12b), cet élément de rigidification (12b) étant situé entre deux zones en retrait (12c) de la paroi sommitale (12a) et ayant une extrémité (14) éloignée des zones en retrait (12c) et sans contact avec le substrat (11).

ELECTROMECHANICAL MICROSYSTEM INCLUDING/UNDERSTANDING A BEAM SE DEFORMING BY INFLECTION

Un microsystème électromécanique comprend une poutre (1) et une électrode (10) couplée par une interaction électrostatique avec la poutre. La poutre est adaptée pour subir des déformations élastiques par flexion et possède un motif de section sensiblement constant. La poutre (1) est constituée de plusieurs pans (P1-P4) s'étendant sur la longueur de la poutre (L), et ayant chacun une épaisseur inférieure à une dimension extérieure du motif de section (w, t). Une fréquence de vibration par flexion de la poutre est alors accrue par rapport à une poutre pleine de mêmes dimensions extérieures. Un tel microsystème est adapté pour des applications à durées de transition très courtes, ou pour réaliser des oscillateurs et des résonateurs à haute fréquence.

DEVICE HAS CAPACITY ELECTRIC VARIABLE INTEGREE AND METHOD FOR REALIZATION Of SO-AND-SO DEVICE

MEMS DEVICE AND METHOD OF MAKING A MEMS DEVICE

MEMS 디바이스 및 MEMS 디바이스를 제조하는 방법이 개시된다. 일 실시예에서, 반도체 디바이스는 기판, 가동(moveable) 전극 및 카운터 전극을 포함하고, 가동 전극 및 카운터 전극은 기판에 기계적으로 연결된다. 가동 전극은 가동 멤브레인(moveable membrane)의 내부 영역을 강화시키도록 구성된다.

FABRICATION OF MEMS BASED CANTILEVER SWITCHES BY EMPLOYING A SPLIT LAYER CANTILEVER DEPOSITION SCHEME

Embodiments discussed herein generally disclose novel alternative methods that can be employed to overcome the gradient stress formed in refractory materials to be used for thin film MEMS cantilever switches. The use of a 'split layer' cantilever fabrication method, as described herein enables thin film MEMS cantilever switches to be fabricated resulting in low operating voltage devices while maintaining the mechanical rigidity of the landing portion of the final fabricated cantilever switch.

A MICROELECTROMECHANICAL DEVICE HAVING A STIFFENED SUPPORT BEAM, AND METHODS OF FORMING STIFFENED SUPPORT BEAMS IN MEMS

A microelectromechanical device (MEMD) defined within a substrate of a MEMS includes a mass element defining an area of interest. The device also includes a support beam supporting the mass element in spaced-apart relationship from the substrate. The support beam includes a first beam member defined by a first fixed end connected to the substrate, and a first free end connected to the mass element. The support beam further includes a second beam member defined by a second fixed end connected to the substrate, and a second free end connected to the mass element. The beam members are in spaced-apart relationship from one another. A first cross member connects the first beam member and the second beam member. Preferably, the support beam includes a plurality of cross members. Two such support beams can be used to support a mass element in a MEMD in a bridge configuration.

MEMS device and manufacturing method thereof

A MEMS device includes a substrate, a supporter, a first back plate, a second back plate and a diaphragm. The substrate has a cavity. The supporter is over the substrate. The first back plate is over the cavity and fixed on the supporter. The second back plate is over the cavity and fixed on the supporter. The diaphragm is between the first back plate and the second back plate. The diaphragm includes a first sub-diaphragm and a second sub-diaphragm over the cavity and fixed on the supporter.

MEMS device structure and methods of forming same

A microelectromechanical system (MEMS) device may include a MEMS structure above a first substrate. The MEMS structure comprising a central static element, a movable element, and an outer static element. A portion of bonding material between the central static element and the first substrate. A second substrate above the MEMS structure, with a portion of a dielectric layer between the central static element and the second substrate. A supporting post comprises the portion of bonding material, the central static element, and the portion of dielectric material.

Flexure shear and strain actuator

Systems and apparatuses are provided for increasing the possible force and/or travel generated in MEMS devices. For example, comb fingers may be utilized to form a strain actuator to generate larger forces. As another example, the force advantage of a parallel plate actuator is leveraged while also leveraging the travel advantage of comb drives to increase force and/or travel capable of being generated. The systems and apparatuses disclosed may utilize one or more comb drives operationally attached to one or more flexures and/or frames.

Surface micromachined optical system with reinforced mirror microstructure

Various embodiments of reinforced mirror microstructures for a surface micromachined optical system are disclosed. Multi-layered and structurally reinforced mirror microstructures are disclosed, including both two and three-layer microstructures. Adjacent structural layers in these multi-layered mirror microstructures may be structurally reinforced and interconnected by a plurality of vertically disposed columns, or by a plurality of at least generally laterally extending rails or ribs, or some combination thereof. Various embodiments of a single layered mirror microstructure with a structural reinforcement assembly that cantilevers from a lower surface thereof is also disclosed.

Optical device

In an optical device, an elastic support unit includes a pair of levers which face in a second direction perpendicular to a first direction, a pair of first torsion support portions which are connected between the levers and the base, a pair of second torsion support portions which are connected between the pair of levers and the movable unit, and a first link member that bridges the levers. The levers and the first link member define a light passage opening. Each of connection positions between the levers and the first torsion support portions is located on a side opposite to the movable unit with respect to the center of the light passage opening in a third direction perpendicular to the first direction and the second direction. A maximum width of the light passage opening in the second direction is defined by a gap between the levers in the second direction.

Micromechanical Sensor

A micromechanical sensor comprising a substrate (5) and at least one mass (6) which is situated on the substrate (5) and which moves relative to the substrate (5) is used to detect motions of the sensor based on an acceleration force and/or Coriolis force which occur(s). The mass (6) and the substrate (5) and/or two masses which move toward one another are connected by at least one bending spring device (1) for a relative rotational motion. The bending spring device (1) has multiple, in particular two, spring bars (2) extending essentially parallel to one another for improving the linear spring characteristic of the bending spring device during the rotational motion, and at least one meander (3) on at least one, preferably on all, of the spring bars (2).

MEMS SENSOR

The MEMS sensor according to the present invention includes a diaphragm. In the diaphragm, an angle formed by two straight lines connecting supporting portions and the center of a main portion with one another respectively is set to satisfy the relation of the following formula (1): (A2/A1)/(B2/B1)>=1 (1) A2: maximum vibrational amplitude of the diaphragm in a case of working a physical quantity of a prescribed value on the diaphragm A1: maximum vibrational amplitude of the diaphragm in a case of working the physical quantity on the diaphragm in an omitting structure obtained by omitting one of the supporting portions from the diaphragm B2: maximum stress caused in the diaphragm in the case of working the physical quantity on the diaphragm B1: maximum stress caused in the diaphragm in the case of working the physical quantity on the diaphragm in the omitting structure ...

MEMS DEVICE, ASSEMBLY COMPRISING THE MEMS DEVICE, AND METHOD OF OPERATING THE MEMS DEVICE

Proposed is a MEMS device comprising a layer stack having at least one second layer formed between a first layer and a third layer. A cavity is formed in the second layer. The MEMS device further comprises two laterally deflectable elements arranged laterally spaced apart in the cavity. Each of the two laterally deflectable elements comprises a respective end connected to a side wall of the cavity. Additionally, the MEMS device comprises a connecting element connected to the two laterally deflectable elements to couple the movement of the two laterally deflectable elements. A plurality of first fingers are arranged discretely spaced between the two laterally deflectable elements on the side wall of the cavity. Further, a plurality of second fingers are arranged discretely spaced between the two laterally deflectable elements on the connecting element. The plurality of second fingers interdigitate with the plurality of first fingers. Further, the plurality of second fingers are laterally ...

MOVABLE DEVICE, MEMS DEVICE AND OPTICAL SCANNING APPARATUS

A movable device includes a movable portion and a drive structure configured to drive the movable portion. The movable device includes a support frame that surrounds the movable portion and supports the drive structure. The movable device includes electrodes electrically coupled to the drive structure. The movable device includes pseudo electrodes electrically isolated from the drive structure. The electrodes and the pseudo electrodes are provided on the support frame.

MICRO-MIRROR DEVICE AND ARRAY THEREOF

PROBLEM TO BE SOLVED: To provide a micro mirror device and an array thereof. SOLUTION: An outer frame 52 is formed at a position distanced from a mirror plate 51, thereby reducing a dynamic deformation of the mirror plate 51, preventing degradation of beam reflected from the mirror plate 51, and enabling to maintain the degree of the flatness of the mirror plate 51. Further, a frame structure supporting a diaphragm of the mirror plate 51 is made to be thinner as it is distanced from the central axis of the mirror plate 51, thereby reducing the dynamic deformation of the mirror plate 51 to a great extent and embodying the lightness of an element. COPYRIGHT: (C)2007,JPO&INPIT ...

УСТРОЙСТВА МЭМС, ИМЕЮЩИЕ ПОДДЕРЖИВАЮЩИЕ СТРУКТУРЫ, И СПОСОБЫ ИХ ИЗГОТОВЛЕНИЯ

... 1. Способ изготовления устройства МЭМС, согласно которому: ! берут подложку; ! наносят на нее электродный слой; ! наносят поверх электродного слоя временный слой; ! формируют во временном слое рельеф с образованием отверстий; ! наносят поверх временного слой подвижный слой и ! формируют поддерживающие структуры, расположенные над подвижным слоем и по меньшей мере частично в отверстиях в временном слое. ! 2. Способ по п.1, согласно которому подвижный слой содержит механический подслой и отражающий подслой. ! 3. Способ по п.2, согласно которому механический подслой формируют непосредственно поверх отражающего подслоя. ! 4. Способ по п.2, согласно которому при нанесении подвижного слоя на временный слой: ! наносят поверх временного слоя отражающий подслой; ! формируют рельеф в отражающем подслое; ! наносят второй временный слой после отражающего подслоя и поверх него и ! после отражающего подслоя и поверх него наносят механический подслой. ! 5. Способ по п.2, согласно которому отражающий подслой ...

Verfahren zur Herstellung eines mikromechanischen Bauelements mit einer Membran

Verfahren zur Herstellung eines mikromechanischen Bauelements mit einem Schichtaufbau auf einem Halbleitersubstrat (8), wobei der Schichtaufbau wenigstens eine dielektrische Membranschicht (30, 34) umfasst, die oberhalb einer im Halbleitersubstrat (8) befindlichen Stützstruktur (28) angeordnet ist, und die Stützstruktur (28) durch eine oder mehrere Hohlsäulen (26), bestehend im Wesentlichen aus Siliziumoxid, gebildet wird, dadurch gekennzeichnet, dass das Verfahren die aufeinander folgenden Verfahrensschritte Beschichten eines Halbleitersubstrats (8) mit einer Siliziumnitridschicht (16), Strukturieren der Nitridschicht (16), Herstellung von Säulen- bzw. Stützstrukturen (28) im Halbleitersubstrat (8) mittels Grabenätzen, Beschichten der Säulenstrukturen (28) und/oder der nicht mit Nitrid maskierten Oberfläche des Halbleitersubstrats (8) mit einer Siliziumoxidschicht (24), Entfernen des Maskiernitrids, Entfernen der aus Halbleitermaterial bestehenden Säulenkerne (22) bzw. von die Säulenkerne ...

HALBLEITERVORRICHTUNG, MIKROFON UND VERFAHREN ZUM HERSTELLEN EINER HALBLEITERVORRICHTUNG

Vorgeschlagen wird eine Halbleitervorrichtung. Die Halbleitervorrichtung beinhaltet eine Membranstruktur mit einer Öffnung. Ferner beinhaltet die Halbleitervorrichtung eine erste Rückplattenstruktur, die auf einer ersten Seite der Membranstruktur angeordnet ist, sowie eine zweite Rückplattenstruktur, die auf einer zweiten Seite der Membranstruktur angeordnet ist. Die Halbleitervorrichtung beinhaltet weiterhin eine vertikale Verbindungsstruktur, die die erste Rückplattenstruktur mit der zweiten Rückplattenstruktur verbindet. Dabei erstreckt sich die vertikale Verbindungsstruktur durch die Öffnung.

Method and wafer for fabricating transducer devices

A wafer for use in fabricating MEMS microphone devices comprises a bracing structure that partitions the wafer into a plurality of device fabrication regions 1051-4, and a plurality of MEMS microphone devices fabricated in the fabrication regions. The bracing structures comprise inoperative dummy MEMS microphone structures that do not comprise a back volume and are not thinned and provide structural reinforcement to the thinned operative devices in the fabrication regions. The bracing structures may comprise combinations of radial, circular, rectangular and hexagonal arrangements.

THREE-DIMENSIONAL STRUCTURE WITH VERY HIGH ONE DENSITY

COMPOUND LINK IN AN INTERFEROMETRIC OPTICAL MODULATOR AND MANUFACTURING PROCESS

Improved thermal bend actuator

Energy harvesting devices and sensors, and methods of making and use thereof

Disclosed herein are energy harvesting devices and sensors, and methods of making and use thereof. The energy harvesting devices can comprise a membrane disposed on a substrate, wherein the membrane comprises a two-dimensional (2D) material and one or more ripples; and a component electrically, magnetically, and/or mechanically coupled to the membrane and/or the substrate, such that the component is configured to harvest energy from the membrane. The sensors can comprise a membrane disposed on a substrate, wherein the membrane comprises a two-dimensional material one or more ripples; and a component electrically, magnetically, and/or mechanically coupled to the membrane and/or the substrate, such that the component is configured to detect a signal from the membrane.

VARIABLE CAPACITY ELECTRONIC MICROCOMPONENT OR MICROSWITCH OR PROCESS FOR FABRICATING SUCH A COMPONENT

... ▓▓▓▓ ProcÚdÚ de fabrication de microcomposants Úlectroniques, du type capacitÚ▓variable ou microswitch, comprenant une armature fixe (1) et une membrane (20)▓dÚformable situÚes en regard l'une de l'autre, caractÚrisÚ en ce qu'il ▓comporte les▓Útapes suivantes, consistant :▓~ Ó dÚposer une premiÞre couche mÚtallique sur une couche d'oxyde (2),▓ladite premiÞre couche mÚtallique Útant destinÚe Ó former l'armature fixe ;▓~ Ó dÚposer un ruban mÚtallique (10, 11) sur au moins une partie de la▓pÚriphÚrie et de part et d'autre de l'armature fixe (1), ledit ruban Útant▓destinÚ Ó servir d'espaceur entre l'armature fixe (1) et la membrane▓dÚformable (20) ;▓~ Ó dÚposer une couche de rÚsine sacrificielle (15) sur au moins la superficie▓de ladite armature fixe (1) ;▓~ Ó gÚnÚrer par lithographie une pluralitÚ de caissons, sur la surface de ▓ladite▓couche de rÚsine sacrificielle ;▓~ Ó dÚposer par Úlectrolyse, Ó l'intÚrieur des caissons formÚs sur la rÚsine▓sacrificielle (15), au moins une zone mÚtallique ...

STRUCTURE OF MOVING-COIL LOUDSPEAKER HAS TECHNOLOGY MEMS

Cette structure de haut-parleur électrodynamique à technologie MEMS, du type comportant des moyens formant stator (2), des moyens formant diaphragme (3) et des moyens élastiquement déformables (4), de liaison de ces moyens, est caractérisée en ce que les moyens formant stator (2), les moyens formant membrane (3) et les moyens de liaison (4) sont formés d'une seule pièce par usinage d'une pastille de silicium.

IMPROVED THERMAL BEND ACTUATOR

A thermal bend actuator (6) is provided with upper arms (23, 25, 26) and lower arms (27, 28) which are non planar, so increasing the stiffness of the arms. The arms (23, 25, 26,27,28) may be spaced transversely of each other and do not overly each other in plan view, so enabling all arms to be formed by depositing a single layer of arm forming material. © KIPO & WIPO 2007 ...

MICROMECHANICAL STRUCTURE AND METHOD TO FABRICATE SAME

A micromechanical structure comprises a substrate and a functional structure arranged on the substrate. The functional structure has a functional region configured to deflect with respect to the substrate responsive to a force acting on a functional region. The functional structure comprises a conductive base layer and a functional structure comprising a stiffening structure having a stiffening structure material arranged on the conductive base layer, and only partially covering the conductive base layer on the functional region. The stiffening structure material comprises a silicon material and at least a carbon material. COPYRIGHT KIPO 2016 ...

SEMICONDUCTOR SENSOR, WHICH INCLUDES A SENSING REGION OF A SEMICONDUCTOR THIN FILM, AND A METHOD FOR MANUFACTURING THE SAME

PURPOSE: A semiconductor sensor and a method for manufacturing the same are provided to vary the shape and the dimension of an insulating layer, which is remained on the periphery of a sensing region, by regulating a timing point for converting a rapid etching operation to a slow etching operation. CONSTITUTION: A first semiconductor layer(22) is formed. An insulating layer(23) is formed on the first semiconductor layer. A second semiconductor layer(24) is formed on the insulating layer. A concave part(26) from the lower side of the first semiconductor layer to the upper side of the insulating layer is formed. The sensing region of the second semiconductor layer(25) is exposed excluding the upper periphery of the concave part. COPYRIGHT KIPO 2011 ...

MICRO-ELECTRO-MECHANICAL SYSTEM SWITCH WITHOUT MALFUNCTION DUE TO IMPACT AND A MANUFACTURING METHOD THEREOF

PURPOSE: A micro-electro-mechanical system(MEMS) switch and a manufacturing method thereof are provided to connect a passive beam to a first terminal by bending a driving beam using an external impact. CONSTITUTION: A micro-electro-mechanical system(MEMS) switch includes a substrate(110), a first terminal(120), a second terminal(130), a support stand, and a driving beam(150). The MEMS switch additionally includes a guide beam(160) for restricting unnecessary motions fluctuated in a particular direction of the driving beam. The MEMS switch performs a switching process which electrically and mutually connects the first terminals using an external impact. The MEMS switch is manufactured through photolithography, evaporation, plating, and plasma-etching processes in order to be formed into a micro size. COPYRIGHT KIPO 2012 ...

Micromechanical z-inertial sensor

Micromechanical z-inertial sensor (100), comprising: a movable MEMS structure (20a) formed in a second functional layer(20); first spring elements (12a) formed in a first functional layer (12) and a first electrode (12d) formed in the first functional layer (12), wherein the first spring elements (12a) are connected to the movable MEMS structure (20a) and to a substrate (10), wherein the first functional layer (12) is arranged below the second functional layer (20); second spring elements (22a) formed in a third functional layer (22) and a second electrode (22d) formed in the third functional layer (22), wherein the second spring elements (22a) are connected to the movable MEMS structure (20a) and to the substrate (10), wherein the third functional layer (22) is arranged above the second functional layer (20); wherein the movable MEMS structure (20a), by means of the spring elements (12a, 22a), is deflectable in the z-direction and is non- deflectable in a defined manner in the x-direction ...

MICRO-ELECTROMECHANICAL SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF

The micro-electromechanical semiconductor component is provided with a first silicon semiconductor substrate (16) having an upper face, into which a cavity (18) delimited by lateral walls and a floor wall is introduced, and having a second silicon semiconductor substrate (13) comprising a silicon oxide layer (14) and a polysilicon layer (15) applied thereon having a defined thickness. The polysilicon layer (15) of the second silicon semiconductor substrate (13) faces the upper face of the first silicon semiconductor substrate (16), the two silicon semiconductor substrates are bonded, and the second silicon semiconductor substrate (13) covers the cavity (18) in the first silicon semiconductor substrate (16). Grooves (19) that extend up to the polysilicon layer (15) are arranged in the second silicon semiconductor substrate (13) in the region of the section thereof that covers the cavity (18).

MICROMIRROR WITH IMPROVED SHOCK AND VIBRATION PERFORMANCE

A layered hinge design providing an improved shock and vibration performance for a two-axis MEMS Micromirror featuring combs drive actuation with independent drive and control for rotating the Micromirror along two-axis of rotation. The two-axis MEMS Micromirror is fabricated using Double SOI wafer as the primary starting material. In addition, a plurality of actuation voltages are driven via conductive layers forming one or more hinges allowing the Micromirror to rotate along the two-axis of rotation. The layered hinge design achieves set angles that are highly stable over time and provides a robust and reliable micromirror that is easy to drive with multiple DC voltages, and moderately insensitive to temperature, shock and vibration.

MEMS sensor

The MEMS sensor according to the present invention includes a diaphragm. In the diaphragm, an angle formed by two straight lines connecting supporting portions and the center of a main portion with one another respectively is set to satisfy the relation of the following formula (1): (A2/A1)/(B2/B1)1(1) A2: maximum vibrational amplitude of the diaphragm in a case of working a physical quantity of a prescribed value on the diaphragm A1: maximum vibrational amplitude of the diaphragm in a case of working the physical quantity on the diaphragm in an omitting structure obtained by omitting one of the supporting portions from the diaphragm B2: maximum stress caused in the diaphragm in the case of working the physical quantity on the diaphragm B1: maximum stress caused in the diaphragm in the case of working the physical quantity on the diaphragm in the omitting structure ...

Microstructure having a membrane and a wedge beneath and methods for manufacture of same

A microstructure comprising a spider-like membrane and a wedge beneath is designed and fabricated on the silicon substrate using common IC techniques and silicon anisotropic etching process. The wedge beneath can contact the membrane to provide mechanical support, or form a narrow gap with the membrane to realize several device functions. The microstructures are adaptable for many applications and can be easily implemented into standard CMOS chips.

Reduced stiffness micro-mechanical structure

Apparatuses and method are described to create a reduced stiffness microstructure (RSM). A RSM is made by forming a first buckled membrane along a first buckling direction and forming a second buckled membrane along a second buckling direction. The second buckling direction is opposite to the first buckling direction and the first buckled membrane is in contact with the second buckled membrane over a contact area. Within an operating zone, a stiffness of the reduced stiffness microstructure spring is less than an absolute value of a stiffness of either the first buckled membrane or the second buckled membrane when the contact area translates along either one of the buckling directions. In the operating zone the stiffness can approach or equal zero.

MEMS SENSOR

A MEMS sensor has a frame portion 2 formed in a rectangular frame shape and a convexoconcave shaped membrane 3 that is constructed within the frame portion 2, the convexoconcave shape of the membrane 3 extend to two direction where a concave and a convex are orthogonal to each other, and square concave portions 3 a and square convex portions 3 b are disposed in a web shape within a whole in-plane area of the membrane 3.

MEMS Device and Method for Manufacturing a MEMS Device

A MEMS device comprises a first membrane structure having a reinforcement region formed from one piece of the first membrane structure, wherein the reinforcement region has a larger layer thickness than an adjoining region of the first membrane structure. The MEMS device includes an electrode structure, wherein the electrode structure is vertically spaced apart from the first membrane structure.

SYSTEM AND METHOD FOR PROTECTING MICROELECTROMECHANICAL SYSTEMS USING BACKPLATE WITH NON-FLAT SECTION

PROBLEM TO BE SOLVED: To incorporate various features to protect MEMS elements from being damaged by external force in association with packaging of the MEMS devices. SOLUTION: A packaged device includes a substrate 101, an interferometric modulation display array 111 formed on the substrate 101, and a backplate 121. The backplate is placed over the display array 111 with a gap 124 between the backplate and the display array. The depth of the gap may vary across the backplate. The backplate can be curved or have a recess on its interior surface facing the display array. Thickness of the backplate may vary. The device may include a reinforcing structure which is integrated with the backplate. COPYRIGHT: (C)2010,JPO&INPIT ...

MIKROELEKTROMECHANISCHES MIKROFON MIT EINER ROBUSTEN RÜCKPLATTE

Es werden Technologien für mikroelektromechanische Mikrofone bereitgestellt, die gegenüber erheblichen Druckänderungen in der Umgebung, in der die mikromechanischen Mikrofone arbeiten, robust sein können. In einigen Ausführungsformen kann eine mikroelektromechanische Mikrofonvorrichtung eine starre Platte umfassen, die mehrere Öffnungen definiert, die den Durchgang einer Druckwelle ermöglichen. Die mikroelektromechanische Mikrofonvorrichtung umfasst auch ein Versteifungselement, das in die starre Platte integriert ist. Das Versteifungselement bewirkt eine Spannungsverteilung innerhalb der starren Platte als Reaktion auf die Druckwelle, die eine Verformung der starren Platte bewirkt.

Gehäuse mit einer Halbleiter-Sensoranordnung und Verfahren zu deren Herstellung

Micromechanical component, such as micromechanical actuator based on semiconductor

A micromechanical component has a semiconductor body (11) with at least one structural layer (1,10) which is movable relative to the semiconductor body and which includes a flat, elongated portion(10). Electrodes (2,3) are provided for forming a sensor or actuator. At least one further portion (1) is provided normal to the flat, elongated portion (10) and has, in a plane coplanar to the flat, elongated portion, in at least one direction, a dimension which, at the most is equal to twice the thickness of the flat, elongated portion, the further portion (1) of the structural layer specifically being designed electrically conductively as an electrode arranged opposite an electrode (2,3) fixedly mounted relative to the semiconductor body (11).

MEMS-Vorrichtung und Verfahren zur Herstellung einer MEMS-Vorrichtung

Vorrichtung (100, 300, 400, 500, 600) umfassend: ein Substrat (140); und eine von dem Substrat (140) getragene Rückplatte (150), wobei die Rückplatte (150) längliche Vorsprünge (236); eine Mittelregion; und mit dem Substrat (140) verbundene Ankerbrücken (238) umfasst, wobei die länglichen Vorsprünge (236) auf den Ankerbrücken (238) angeordnet sind.

Method and wafer for fabricating transducer devices

Mems device and process

MEMS devices and circuits including same

A capacitive RF microelectromechanical systems (MEMS) switch comprising: a substrate; a co-planar waveguide on the substrate, the co-planar waveguide comprising a signal conductor 702 supported on the substrate and ground conductors 703, 704 supported on either side of the signal conductor; and a MEMS bridge 50 comprising an electrically conductive switching portion. The electrically conducting switching portion comprises a switching signal conductor region being provided over the signal conductor. The MEMS is movable to change the impedances between the respective switching signal conductor region and the signal conductor. There is a bridged portion 52 over which the MEMS bridge extends and an offset portion 54 offset from the bridged portion wherein the characteristic impedance of the signal conductor tapers up in magnitude as it extends from the offset portion to the bridged portion and the width may narrow. An antenna circuit, attenuator circuit and an RF splitter and/or combiner circuit ...

Microfabricated filter and method of making same

MEMS DEVICES HAVING SUPPORT STRUCTURES AND METHODS OF FABRICATING THE SAME

Embodiments of MEMS devices comprise a conductive movable layer spaced apart from a conductive fixed layer by a gap, and supported by rigid support structures, or rivets, overlying depressions in the conductive movable layer, or by posts underlying depressions in the conductive movable layer. In certain embodiments, portions of the rivet structures extend through the movable layer and contact underlying layers. In other embodiments, the material used to form the rigid support structures may also be used to passivate otherwise exposed electrical leads in electrical connection with the MEMS devices, protecting the electrical leads from damage or other interference.

MICRO MECHANICAL COMPONENT AND PRODUCTION PROCESS THEREOF

A micro mechanical component of the present invention comprises a base, and at least one drive portion supported on the base and relatively driving to the base, in which the drive portion is formed from a diamond layer. Thus, because the drive portion has excellent mechanical strength and modulus of elasticity, the operational performance can be greatly improved as a micro mechanical component processed in a fine shape, from the conventional level. Further, because the drive portion exhibits excellent device characteristics under severe circumstances, the range of applications as a micro mechanical component can be widely expanded from the conventional range.

Radio telecommunication filters variable integrated capacity mechanism/manufacture method having membrane with rigid rib section upper face forming moving armature/facing fixed armature

La présente invention concerne un dispositif à capacité variable intégrée comprenant au moins une membrane (12) formant au moins une armature mobile et présentant au moins une face principale en regard d'au moins une armature fixe. Conformément à l'invention, la membrane présente au moins une nervure (32) de rigidité se dressant dans une direction perpendiculaire à ladite face principale. Application à la réalisation de filtres résonnants.

MASS-SPRING SYSTEM CROSS-SEAL PACKAGING

L'invention concerne un système masse-ressort (30) comprenant un support (34), une masse mobile (32) par rapport au support, au moins un premier et un deuxième ressort (36A, 36B) reliant la masse au support et permettant un déplacement de la masse par rapport au support selon une première direction (Ox), le premier ressort étant le symétrique du deuxième ressort par rapport à un axe (C), chaque premier et deuxième ressort comprenant au moins des première et deuxième poutres (38A, 38B, 39A, 39B) en série agencées en zigzag et un premier cadre fermé (40) entourant la masse, à distance de la masse et du support, chaque première poutre (38A, 38B) comprenant une première extrémité reliée au support et une deuxième extrémité fixée au premier cadre et chaque deuxième poutre (39A, 39B) comprenant une troisième extrémité fixée au premier cadre et une quatrième extrémité reliée à la masse.

Actuator device and input apparatus

An actuator device includes an actuator having one end as a fixed end and the other end as a free end, and bendable when a voltage is applied; and a base member having a fixed section that fixes the fixed end of the actuator. A projecting section is provided at the base member. In a state where the actuator is bent, when a force is applied and the free end is deformed toward a direction that is reverse to the bending direction, the actuator contacts the projecting section. The projecting section is a fulcrum of the displacement and a generating load is capable of being large by the principle of material mechanics without losing the displacement amount.

Mems device and composite substrate for an mems device

An MEMS device and a composite substrate for an MEMS device are provided. The MEMS device comprises a first silicon structure layer and a second silicon structure layer fixedly connecting to the first silicon structure layer. The first silicon structure layer has a twistable rod and a first plane. The first silicon structure layer has a first crystal direction with a miller index of <100> and a second crystal direction with a miller index of <110>. The first crystal direction and the second crystal direction are both parallel to the first plane. The rod has an axis direction, which is parallel to the first plane and intersected by the second crystal direction. In this manner, the torsional stiffness of the rod can be improved.

Micromechanical component and manufacturing method for a micromechanical component

A micromechanical component having a fixing point and a seismic weight, which is connected to the fixing point by at least one spring and is made at least partially out of a first material, the first material being a semiconductor material, the seismic weight being additionally made out of at least one second material, and the second material having a higher density than the first material. In addition, a manufacturing method for a micromechanical component is provided, having the steps of forming a seismic weight at least partially out of a first material, the first material being a semiconductor material, connecting the seismic weight to a fixing point of the micromechanical component, using at least one spring, and forming the seismic weight from the first material and at least one second material, which has a higher density than the first material.

Method for mems device fabrication and device formed

The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.

Nanoelectromechanical Structures Exhibiting Tensile Stress And Techniques For Fabrication Thereof

Improved nano-electromechanical system devices and structures and systems and techniques for their fabrication. In one embodiment, a structure comprises an underlying substrate separated from first and second anchor points by first and second insulating support points, respectively. The first and second anchor points are joined by a beam. First and second deposition regions overlie the first and second anchor points, respectively, and the first and second deposition regions exert compression on the first and second anchor points, respectively. The compression on the first and second anchor points causes opposing forces on the beam, subjecting the beam to a tensile stress. The first and second deposition regions suitably exhibit an internal tensile stress having an achievable maximum varying with their thickness, so that the tensile stress exerted on the beam depends at least on part on the thickness of the first and second deposition regions.

Nonvolatile nano-electromechanical system device

A nonvolatile nano-electromechanical system device is provided and includes a cantilever structure, including a beam having an initial shape, which is supported at one end thereof by a supporting base and a beam deflector, including a phase change material (PCM), disposed on a portion of the beam in a non-slip condition with a material of the beam, the PCM taking one of an amorphous phase or a crystalline phase and deflecting the beam from the initial shape when taking the crystalline phase.

Plate, Transducer and Methods for Making and Operating a Transducer

A plate, a transducer, a method for making a transducer, and a method for operating a transducer are disclosed. An embodiment comprises a plate comprising a first material layer comprising a first stress, a second material layer arranged beneath the first material layer, the second material layer comprising a second stress, an opening arranged in the first material layer and the second material layer, and an extension extending into opening, wherein the extension comprises a portion of the first material layer and a portion of the second material layer, and wherein the extension is curved away from a top surface of the plate based on a difference in the first stress and the second stress.

Micro-electro-mechanical system (mems) and related actuator bumps, methods of manufacture and design structures

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming a wiring layer on a substrate comprising actuator electrodes and a contact electrode. The method further includes forming a MEMS beam above the wiring layer. The method further includes forming at least one spring attached to at least one end of the MEMS beam. The method further includes forming an array of mini-bumps between the wiring layer and the MEMS beam.

Electromechanical transducer

An electromechanical transducer ( 1 ) has a pressurizing chamber ( 21 ) and a side-chamber ( 23 ) formed in a plate ( 11 ). On a driven film ( 13 ) forming the upper wall surface ( 21 a ) of the pressurizing chamber ( 21 ) and the side-chamber ( 23 ), a lower electrode ( 33 ), a driving member, and an upper electrode ( 35 ) are formed in this order. The driving member is composed of an operation section ( 31 p ) located over the pressurizing chamber ( 21 ), and an extended section ( 31 a ) extending from the operation section ( 31 p ) to over the side-chamber ( 23 ). The side-chamber ( 23 ) has a smaller width than the pressurizing chamber ( 21 ) in a second direction perpendicular to a first direction in which the side-chamber ( 23 ) is located beside the pressurizing chamber ( 21 ). The extended section ( 31 a ) of the driving member has a smaller width than the side-chamber ( 23 ) in the second direction.

Micro-electromechanical semiconductor component

The micro-electromechanical semiconductor component is provided with a semiconductor substrate in which a cavity is formed, which is delimited by lateral walls and by a top and a bottom wall. In order to form a flexible connection to the region of the semiconductor substrate, the top or bottom wall is provided with trenches around the cavity, and bending webs are formed between said trenches. At least one measuring element that is sensitive to mechanical stresses is formed within at least one of said bending webs. Within the central region surrounded by the trenches, the top or bottom wall comprises a plurality of depressions reducing the mass of the central region and a plurality of stiffening braces separating the depressions.

Pressure sensor having nanostructure and manufacturing method thereof

The present disclosure relates to a pressure sensor having a nanostructure and a method for manufacturing the same. More particularly, it relates to a pressure sensor having a nanostructure attached on the surface of the pressure sensor and thus having improved sensor response time and sensitivity and a method for manufacturing the same. The pressure sensor according to the present disclosure having a nanostructure includes: a substrate; a source electrode and a drain electrode arranged on the substrate with a predetermined spacing; a flexible sensor layer disposed on the source electrode and the drain electrode; and a nanostructure attached on the surface of the flexible sensor layer and having nanosized wrinkles.

MICRO-ELECTROMECHANICAL DEVICE AND USE THEREOF

The micro-electromechanical device has a substrate. Integrated into the substrate is a micromechanical component that has a bending element which can be bent reversibly and which has a first end connected to the substrate and extends from the first end over a free space. The bending element has at least one web having two side edges, the course of which is defined by depressions introduced into the bending element and adjacent to the side edges. In order to form a homogenization region located within the web, in which mechanical stresses occurring during bending of the bending element are substantially equal, the mutual spacing of the side edges of the web decreases, as viewed from the first end of the bending element. The device further comprises at least one microelectronic component that is sensitive to mechanical stresses and embedded in the web in the homogenization region of the latter. 1. A micro-electromechanical device comprising:a substrate suitable for the production of microelectronic components, in particular a semiconductor substrate,{'b': '3', 'a micromechanical component integrated into the substrate, the micromechanical component comprising a bending element which can be bent reversibly and which has a first end connected to the substrate and extends from the first end over a free space (),'}the bending element comprising at least one web having two side edges, the course of the side edges being defined by depressions introduced into the bending element and adjacent to the side edges,wherein, to form a homogenization region located within the web, in which mechanical stresses occurring during bending of the bending element are substantially equal, the mutual spacing of the side edges of the web decreases, as viewed from the first end of the bending element, andat least one microelectronic component sensitive to mechanical stresses, the microelectronic component being integrated in the web within the homogenization region of the web.2. The micro- ...

MICROMECHANICAL COMPONENT HAVING A DIAPHRAGM

Measures are described with the aid of which not only a rupture, but also cracks may be detected in the diaphragm structure of a micromechanical component with the aid of circuit means integrated into the diaphragm structure. At least some circuit elements are integrated for this purpose into the bottom side of the diaphragm, i.e., into a diaphragm area directly adjoining the cavern below the diaphragm. 1. A micromechanical component , comprising:at least one diaphragm which spans a cavern in a layer structure of the component; andat least one circuit element integrated into the diaphragm for electrically detecting cracks in the diaphragm;wherein at least one of the at least one circuit elements extend across a diaphragm area directly adjoining the cavern.2. The component as recited in claim 1 , wherein connecting contacts claim 1 , via which at least one diaphragm layer directly adjoining the cavern is energized claim 1 , are provided on a surface of the component in an area of one of an edge of the diaphragm or a frame of the diaphragm claim 1 , and a monitor is provided to monitor current flow through the diaphragm layer.3. The component as recited in claim 2 , wherein in the diaphragm layer directly adjoining the cavern claim 2 , at least one resistor element is provided which extends at least across an entire length or width of the diaphragm and is contacted via the connecting contacts.4. The component as recited in claim 3 , wherein the resistor element extends across an entire surface of the diaphragm.5. The component as recited in claim 3 , wherein at least four connecting contacts are situated in the area of one of the edge of the diaphragm or the frame of the diaphragm claim 3 , and are interconnected in such a way that one of the diaphragm layer directly adjoining the cavern or the at least one resistor element may be energized in two different directions.6. The component as recited in claim 5 , wherein the one of the diaphragm layer directly adjoining ...

Method for coating micromechanical parts with dual diamond coating

Method for coating micromechanical components of a micromechanical system, in particular a watch movement, comprising: providing a substrate ( 4 ) component to be coated; providing said component with a first diamond coating ( 2 ) doped with boron; providing said component with a second diamond coating ( 3 ); wherein: said second diamond coating ( 3 ) is provided by CVD in a reaction chamber; during CVD deposition, during the last portion of the growth process, a controlled increase of the carbon content within the reaction chamber is provided, thereby providing an increase of the sp2/sp3 carbon ( 6 ) bonds up to an sp2 content substantially between 1% and 45%. Corresponding micromechanical components are also provided.

MEMS PROCESS AND DEVICE

A method of fabricating a micro-electrical-mechanical system (MEMS) transducer comprises the steps of forming a membrane on a substrate, and forming a back-volume in the substrate. The step of forming a back-volume in the substrate comprises the steps of forming a first back-volume portion and a second back-volume portion, the first back-volume portion being separated from the second back-volume portion by a step in a sidewall of the back-volume. The cross-sectional area of the second back-volume portion can be made greater than the cross-sectional area of the membrane, thereby enabling the back-volume to be increased without being constrained by the cross-sectional area of the membrane. The back-volume may comprise a third back-volume portion. The third back-volume portion enables the effective diameter of the membrane to be formed more accurately. 1. A micro-electrical-mechanical system (MEMS) package , comprising:a package substrate; and wherein the MEMS capacitive microphone comprises:', 'a substrate;', 'a membrane formed relative to a first side of the substrate; and', 'a back-volume formed through the substrate from a second side of the substrate;', 'wherein the back-volume comprises a first back-volume portion and a second back-volume portion, the first back-volume portion being separated from the second back-volume portion by a discontinuity in a sidewall of the back-volume; and', 'wherein the cross sectional area of the second back-volume portion is greater than the cross sectional area of the first back-volume portion, for enabling the effective height of the MEMS capacitive microphone to be reduced for a given volume of back-volume., 'a MEMS capacitive microphone situated on the package substrate;'}2. A MEMS package as claimed in claim 1 , wherein the discontinuity comprises a discontinuity in the cross-sectional area of the back volume in a plane parallel to the substrate.3. A MEMS package as claimed in claim 1 , wherein the discontinuity comprises a ...

Microscale Metallic CNT Templated Devices and Related Methods

A microscale device comprises a patterned forest of vertically grown and aligned carbon nanotubes defining a carbon nanotube forest with the nanotubes having a height defining a thickness of the forest, the patterned forest defining a patterned frame that defines one or more components of a microscale device. A conformal coating of substantially uniform thickness at least partially coats the nanotubes, defining coated nanotubes and connecting adjacent nanotubes together, without substantially filling interstices between individual coated nanotubes. A metallic interstitial material infiltrates the carbon nanotube forest and at least partially fills interstices between individual coated nanotubes. 1. A microscale device , comprising:a patterned forest of vertically grown and aligned carbon nanotubes defining a carbon nanotube forest with the nanotubes having a height defining a thickness of the forest, the patterned forest defining a patterned frame that defines one or more components of a microscale device;a conformal coating of substantially uniform thickness at least partially coating the nanotubes, defining coated nanotubes and connecting adjacent nanotubes together, without substantially filling interstices between individual coated nanotubes; anda metallic interstitial material infiltrating the carbon nanotube forest and at least partially filling interstices between individual coated nanotubes.2. The device of claim 1 , wherein at least one component of the patterned frame is fixed and at least one component of the patterned frame is moveable relative to the fixed component.3. The device of claim 1 , wherein the metallic interstitial material is applied by an electroplating process.4. The device of claim 1 , wherein conformal coating comprises a carbon material.5. The device of claim 1 , wherein the thickness of the carbon nanotube forest is between 3 μm (microns) and 9 mm.6. The device of claim 1 , wherein the microscale device comprises a MEMS device.7. The ...

ACOUSTIC TRANSDUCERS WITH PERFORATED MEMBRANES

A MEMS device, such as a microphone, uses a perforated plate. The plate comprises an array of holes across the plate area. The plate has an area formed as a grid of polygonal cells, wherein each cell comprises a line of material following a path around the polygon thereby defining an opening in the centre. In one aspect, the line of material forms a path along each side of the polygon which forms a track which extends at least once inwardly from the polygon perimeter towards the centre of the polygon and back outwardly to the polygon perimeter. This defines a meandering hexagon side wall, which functions as a local spring suspension. 1. A MEMS device comprising at least one membrane ,wherein the at least one membrane has an area including a grid of convex polygonal cells, wherein each cell comprises a line of material of constant width following a path around the polygon thereby defining an opening in the centre of the polygon,wherein the line of material forms a path along each side of the polygon which forms a track which, for each side of the polygon, extends at least once inwardly from the polygon perimeter towards the centre of the polygon and back outwardly to the polygon perimeter, wherein the polygon comprises one of a triangle, a pentagon and a hexagon.2. A device as claimed in claim 1 , wherein the polygon comprises the hexagon.3. A device as claimed in claim 2 , wherein each cell comprises a closed path around the hexagon claim 2 , with indents at the hexagon corners towards the hexagon centre.4. A device as claimed in claim 2 , wherein each side of the hexagon comprises a line between the corners claim 2 , which extends inwardly once towards the centre of the hexagon and outwardly once towards the centre of an adjacent hexagon.5. A device as claimed in claim 4 , wherein each side of the hexagon is rotationally 180 degrees symmetric.6. A device as claimed in claim 4 , wherein each side of the hexagon comprises a line between the corners claim 4 , which ...

Method for mems device fabrication and device formed

The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.

HYBRID INTERGRATED COMPONENT AND METHOD FOR THE MANUFACTURE THEREOF

Measures are proposed by which the design freedom is significantly increased in the case of the implementation of the micromechanical structure of the MEMS element of a component, which includes a carrier for the MEMS element and a cap for the micromechanical structure of the MEMS element, the MEMS element being mounted on the carrier via a standoff structure. The MEMS element is implemented in a layered structure, and the micromechanical structure of the MEMS element extends over at least two functional layers of this layered structure, which are separated from one another by at least one intermediate layer. 1. A component , comprising:a carrier;a standoff structure;an MEMS element including a micromechanical structure and mounted on the carrier via the standoff structure; and the MEMS element is implemented in a layered structure including a plurality of functional layers, and', 'the micromechanical structure of the MEMS element extends over at least two functional layers of the layered structure that are separated from one another by at least one intermediate layer., 'a cap situated above the micromechanical structure of the MEMS element, wherein2. The component as recited in claim 1 , wherein the micromechanical structure of the MEMS element includes at least one section that extends over the at least two functional layers and at least one section that only extends over one of the at least two functional layers.3. The component as recited in claim 1 , wherein the at least two functional layers of the MEMS element are monocrystalline silicon layers.4. The component as recited in claim 1 , wherein one functional layer of the MEMS element is formed by a functional layer of an SOI wafer claim 1 , and an other functional layer of the MEMS element is formed by an SOI carrier substrate.5. The component as recited in claim 1 , wherein the at least two functional layers of the MEMS element are formed by two functional layers of a two-layer SOI wafer.6. The component as ...

HYBRIDLY INTEGRATED COMPONENT AND METHOD FOR THE PRODUCTION THEREOF

A hybridly integrated component includes an ASIC element having a processed front side, a first MEMS element having a micromechanical structure extending over the entire thickness of the first MEMS substrate, and a first cap wafer mounted over the micromechanical structure of the first MEMS element. At least one structural element of the micromechanical structure of the first MEMS element is deflectable, and the first MEMS element is mounted on the processed front side of the ASIC element such that a gap exists between the micromechanical structure and the ASIC element. A second MEMS element is mounted on the rear side of the ASIC element. The micromechanical structure of the second MEMS element extends over the entire thickness of the second MEMS substrate and includes at least one deflectable structural element. 1. A hybridly integrated component , comprising:an ASIC element having a processed front side;a first MEMS element having a first substrate and a first micromechanical structure extending over the entire thickness of the first substrate, wherein at least one structural element of the first micromechanical structure is deflectable, and wherein the first MEMS element is mounted on the processed front side of the ASIC element such that a gap exists between the first micromechanical structure and the ASIC element;a first cap wafer mounted over the first micromechanical structure of the first MEMS element;a second MEMS element mounted on a rear side of the ASIC element, the second MEMS element having a second substrate and a second micromechanical structure extending over the entire thickness of the second substrate, wherein the second MEMS element includes at least one deflectable structural element, and wherein a gap exists between the second micromechanical structure and the ASIC element; anda second cap wafer mounted over the second micromechanical structure of the second MEMS element.2. The component as recited in claim 1 , wherein in the ASIC element ...

WAFER LEVEL MEMS FORCE DIES

A composite wafer level MEMS force dies including a spacer coupled to a sensor is described herein. The sensor includes at least one flexible sensing element, such as a beam or diaphragm, which have one or more sensor elements formed thereon. Bonding pads connected to the sensor elements are placed on the outer periphery of the sensor. The spacer, which protects the flexible sensing element and the wire bonding pads, is bonded to the sensor. For the beam version, the bond is implemented at the outer edges of the die. For the diaphragm version, the bond is implemented in the center of the die. An interior gap between the spacer and the sensor allows the flexible sensing element to deflect. The gap can also be used to limit the amount of deflection of the flexible sensing element in order to provide overload protection. 1. A MEMS force die , comprising:a spacer for receiving an applied force; and 'wherein at least one of the spacer and the sensor defines a gap, the gap being arranged between the spacer and the sensor, and a depth of the gap being configured to limit an amount of deflection of the flexible sensing element.', 'a sensor bonded to the spacer, the sensor comprising at least one flexible sensing element having one or more sensor elements formed thereon, the flexible sensing element being configured to deflect in response to the applied force received by the spacer and transferred to the sensor, and the sensor elements changing at least one electrical characteristic based on an amount or magnitude of the applied force,'}2. The MEMS force die of claim 1 , wherein the sensor further comprises a plurality of flexible sensing elements claim 1 , each of the flexible sensing elements being supported by a support structure.3. The MEMS force die of claim 2 , wherein the sensor defines an upper side and a bottom side claim 2 , the bottom side of the sensor being etched to form the flexible sensing elements and the support structure claim 2 , and at least one of the ...

Electronic device and method of manufacturing the same

An electronic device includes a substrate, an electrode formed on the substrate, and a movable portion provided above the electrode, the movable portion being elastically deformable, in which the movable potion includes a shape memory alloy film.

INTEGRATED ACOUSTIC TRANSDUCER IN MEMS TECHNOLOGY, AND MANUFACTURING PROCESS THEREOF

A MEMS acoustic transducer, for example, a microphone, includes a substrate provided with a cavity, a supporting structure, fixed to the substrate, a membrane having a perimetral edge and a centroid, suspended above the cavity and fixed to the substrate the membrane configured to oscillate via the supporting structure. The supporting structure includes a plurality of anchorage elements fixed to the membrane, and each anchorage element is coupled to a respective portion of the membrane between the centroid and the perimetral edge of the membrane. 1. A process for manufacturing a MEMS acoustic transducer , comprising:providing a substrate;forming, on said substrate, a supporting structure, fixed to said substrate;forming a membrane suspended above and fixed to said substrate through said supporting structure and configured to oscillate;forming a cavity in the substrate underneath the membrane; andforming a plurality of anchorage elements arranged between said membrane and said supporting structure, each anchorage element being fixed to a respective portion of said membrane comprised between a centroid and a perimetral edge of said membrane.2. The process according to claim 1 , further comprising forming a structural layer and defining said structural layer so as to form said supporting structure and an electrode electrically and mechanically separated from said supporting structure.3. The process according to wherein forming the membrane and the supporting structure further comprises:forming a first sacrificial layer on the substrate;forming a membrane layer on said first sacrificial layer;defining said membrane layer;forming a second sacrificial layer on said membrane layer;removing selective portions of said second sacrificial layer in areas that are to form the anchorage elements;depositing and defining said structural layer on said second sacrificial layer;removing said first sacrificial layer, so that said membrane is suspended above the substrate; andpartially ...

Detachable components for space-limited applications through micro and nanotechnology (decal-mnt)

The invention relates to space-saving micro- and nano-components and to methods for producing same. The components are characterized in that they do not comprise a rigid substrate having a considerable thickness. The mechanical stresses, which result in deformations and/or warpage within a component, are compensated by means of a mechanically stress-compensated design and/or by means of active mechanical stress compensation by depositing suitable stress compensation layers such that there is no need for relatively thick substrates. Thus, the overall thickness of the components is decreased and the integration options thereof in technical systems are improved. In addition, the field of application of such components is expanded.

Semiconductor structures provided within a cavity and related design structures

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity. The method for forming the cavity further includes forming at least one first vent hole of a first dimension which is sized to avoid or minimize material deposition on a beam structure during sealing processes. The method for forming the cavity further includes forming at least one second vent hole of a second dimension, larger than the first dimension.

ACCELERATION SENSOR

A first sensor section installed in an acceleration sensor employs a first elastic member which is elastically movable according to acceleration in the first and third directions and is stiff against acceleration in second direction so as to restrict elasticity in second direction. Thereby, the first sensor section is provided as a biaxial acceleration sensor which detects the first and third directional acceleration according to a change of electrostatic capacity between a first weight (i.e. the first movable electrode) made movable according to acceleration and the first fixed electrode. A second sensor section installed in the acceleration sensor is structurally identical with the first sensor section and configured to detect acceleration in second and third directions. Thereby, such combination of the first sensor section and the second sensor section constitutes a three-dimensional acceleration sensor. 1. An acceleration sensor comprising:a substrate;a first elastic member that is fixed to the substrate at one end thereof and configured to move elastically according to acceleration with respect to two different directions one of which is a first direction parallel to a plane of the substrate and other one of which is a third direction perpendicular to the plane of the substrate;a second elastic member that is fixed to the substrate at one end thereof and configured to move elastically according to acceleration with respect to two different directions one of which is a second direction being perpendicular to the first direction and parallel to the plane of the substrate, and other one of which is the third direction;a first weight which is connected to the other end of the first elastic member and movably supported apart from the substrate;a second weight which is connected to the other end of the second elastic member and movably supported apart from the substrate; anda set of three sensor sections comprising a first sensor section, a second sensor section and ...

MOTION CONTROL STRUCTURE AND ACTUATOR

The present invention provides a motion control structure and a actuator. The motion control structure includes a motion platform, a first actuator having a first execution unit arranged on opposite sides of the motion platform along an X-axis direction and a second execution unit arranged on opposite sides of the motion platform along a Y-axis direction. The first execution unit includes a first actuating element displaced along the X-axis direction. The second execution unit includes a second actuating element displaced along the Y-axis direction. A second actuator surrounds an inner periphery of the motion platform and includes a third execution unit having an assembly portion displaced along the Z-axis direction. The motion control structure of the invention has the advantages that the motion platform can be driven to realize motion in six degrees of freedom. 1. A motion control structure , including:a motion platform, used for connecting with a driven object;a first actuator, used for driving the motion platform to translate along an X-axis or a Y-axis or rotate around a Z-axis, wherein the first actuator surrounds an outer periphery of the motion platform, and the first actuator includes a first execution unit arranged on opposite sides of the motion platform along the X-axis direction and a second execution unit arranged on opposite sides of the motion platform along the Y-axis direction; the first execution unit includes a first actuating element connected to the motion platform, and the first actuating element can be displaced along the X-axis direction; the second execution unit includes a second actuating element connected to the motion platform, and the second actuating element can be displaced along the Y-axis direction; anda second actuator, used for driving the motion platform to translate along the Z-axis or rotate around the X-axis or the Y-axis, wherein the second actuator surrounds an inner periphery of the motion platform, and the second actuator ...

Sensor element and method of manufacturing the same

Provided are sensor elements and a method of manufacturing the same. The sensor element includes a die, an active part including a frame surrounded by the die, a first trench disposed between the die and the active part, and a bridge connecting the die and the frame and a second trench being formed in the bridge, whereby electrical connection from the active part to an electrode pad may be secured and transfer of external stress to the active part may be significantly reduced through the second trench.

Mems device and process

The present application describes MEMS transducer having a membrane and a membrane electrode. The membrane and membrane electrode form a two-layer structure. The membrane electrode is in the form of a lattice of conductive material. The pitch of the lattice and/or the size of the openings varies from a central region of the membrane electrode to a region laterally outside the central region.

MICROMECHANICAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

A micromechanical structure in accordance with various embodiments may include: a substrate; and a functional structure arranged at the substrate; wherein the functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region; and wherein at least a section of the functional region has an elastic modulus in the range from about 5 GPa to about 70 GPa. 1. A micromechanical structure , comprising:a substrate; anda functional structure arranged at the substrate;wherein the functional structure comprises a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region; andwherein at least a section of the functional region has an elastic modulus in the range from about 5 GPa to about 70 GPa.2. The micromechanical structure of claim 1 , wherein the at least a section comprises a material having a density in the range from about 1 g/cmto about 16 g/cm.3. The micromechanical structure of claim 1 , wherein the at least a section comprises a material having a coefficient of thermal expansion (CTE) in the range from about 1·10/Kelvin to about 6·10/Kelvin.4. The micromechanical structure of claim 1 , wherein the at least a section comprises a compound material comprising at least two elements.5. The micromechanical structure of claim 1 , wherein the at least a section comprises amorphous hydrogenated silicon carbide (a-SiC:H).6. The micromechanical structure of claim 5 , wherein the a-SiC:H has a carbon content in the range from about 1 at.-% to about 99 at.-%.7. The micromechanical structure of claim 5 , wherein the a-SiC:H has a hydrogen content in the range from about 1 at.-% to about 66 at.-%.8. The micromechanical structure of claim 1 , wherein the at least a section comprises amorphous hydrogenated carbon (a-C:H).9. The micromechanical structure of claim 1 , wherein the at least a section comprises a base material that is ...

STRESSED DECOUPLED MICRO-ELECTRO-MECHANICAL SYSTEM SENSOR

A semiconductor device may include a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device. The stress decoupling structure may include a set of trenches that are substantially perpendicular to a main surface of the semiconductor device. The first region may include a micro-electro-mechanical (MEMS) structure. The semiconductor device may include a sealing element to at least partially seal openings of the stress decoupling structure. 1. A semiconductor device , comprising: wherein the stress decoupling structure includes a set of trenches that are substantially perpendicular to a main surface of the semiconductor device, and', 'wherein the first region includes a micro-electro-mechanical (MEMS) structure; and, 'a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device,'}a sealing element to at least partially seal openings of the stress decoupling structure.2. The semiconductor device of claim 1 , wherein the stress decoupling structure further includes a cavity that at least partially separates the first region from the second region.3. The semiconductor device of claim 1 , wherein the sealing element includes a cap that at least partially seals the openings of the stress decoupling structure.4. The semiconductor device of claim 3 , wherein the cap includes a stress decoupling structure to decouple the first region and the second region.5. The semiconductor device of claim 3 , wherein the cap is formed from silicon or glass.6. The semiconductor device of claim 3 , wherein the cap is affixed to the first region and the second region using a wafer bonding process.7. The semiconductor device of claim 3 , wherein the cap is formed from an elastic material.8. The semiconductor device of claim 7 , wherein the elastic material at least partially fills the set of trenches of the stress ...

MICROMECHANICAL SPRING FOR AN INERTIAL SENSOR

A micromechanical spring for an inertial sensor includes first and second spring elements situated parallel to each other and anchored on an anchoring element of the inertial sensor; and a third spring element situated between the two spring elements, anchored on the anchoring element, and having on both external sides a defined number of nub elements that are formed so as to have an increasing distance from the spring elements in a defined fashion as the distance from the anchoring element increases. 19-. (canceled)10. A micromechanical spring for an inertial sensor , having:an anchor;a first spring element anchored to the anchor;a second spring element anchored to the anchor and extending in parallel to the first spring element; and along a length of a first of two external two external sides of the third spring element extending from the anchor a first plurality of nub elements that each extends from the third spring element towards the first spring element, wherein respective distances of the nub elements of the first plurality from the first spring element vary such that the further the nub element from the anchor the greater the distance of the nub element from the first spring element; and', 'along a length of a second of two external two external sides of the third spring element extending from the anchor a second plurality of nub elements that each extends from the third spring element towards the second spring element, wherein respective distances of the nub elements of the second plurality from the second spring element vary such that the further the nub element from the anchor the greater the distance of the nub element from the second spring element., 'a third spring element anchored to the anchor, extending from the anchor between the first and second spring elements, and including111. The micromechanical spring of claim , wherein the first and second spring elements are connected to each other at their end regions by a connecting element.121. The ...

CURABLE SILICONE FORMULATIONS AND RELATED CURED PRODUCTS, METHODS, ARTICLES, AND DEVICES

The invention comprises a butyl acetate-silicone formulation comprising (A) an organopolysiloxane containing an average of at least two silicon-bonded alkenyl groups per molecule, (B) an organosilicon compound containing an average of at least two silicon-bonded hydrogen atoms per molecule; (C) a hydrosilylation catalyst; and a coating effective amount of (D) butyl acetate. The invention also comprises related silicone formulations made by removing a portion, or all, of (D) butyl acetate therefrom, and related cured products, methods, articles and devices. 1. A butyl acetate-silicone formulation comprising (A) an organopolysiloxane containing an average , per molecule , of at least two silicon-bonded alkenyl groups; (B) an organosilicon compound containing an average of at least two silicon-bonded hydrogen atoms per molecule; (C) a hydrosilylation catalyst; and a coating effective amount of (D) butyl acetate; with the proviso that the formulation lacks each of the following constituents: a thermally conductive filler; an organopolysiloxane having , on average , at least two silicon-bonded aryl groups and at least two silicon-bonded hydrogen atoms in the same molecule; a phenol; a fluoro-substituted acrylate; iron; and aluminum.2. A concentrated silicone formulation made by removing most claim 1 , but not all claim 1 , butyl acetate from the butyl acetate-silicone formulation of without curing same claim 1 , the formulation consisting essentially of (A) an organopolysiloxane containing an average claim 1 , per molecule claim 1 , of at least two alkenyl groups; (B) an organosilicon compound containing an average claim 1 , per molecule claim 1 , of at least two silicon-bonded hydrogen atoms in a concentration sufficient to cure the formulation; a catalytic amount of (C) a hydrosilylation catalyst; and a residual amount of (D) butyl acetate; with the proviso that the formulation lacks each of the following constituents: a thermally conductive filler; an ...

Micromechanical Semiconductor Sensing Device

A micromechanical semiconductor sensing device is disclosed. In an embodiment the sensing device includes a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, the piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal. 1. A micromechanical semiconductor sensing device comprising:a micromechanical sensing structure including a sensing device responsive to an external force on the micromechanical semiconductor sensing device, the micromechanical sensing structure configured to output an electrical sensing signal responsive to the external force; andmeans for sensing a mechanical stress in the micromechanical sensing structure due to the external force on the micromechanical semiconductor sensing device; andmeans for outputting an electrical disturbance signal responsive to the sensed mechanical stress, wherein the means for sensing the mechanical stress and the means for outputting the electrical disturbance signal are embedded in the micromechanical sensing structure.2. A method for sensing an external force on a micromechanical semiconductor sensing device , the method comprising:simultaneously obtaining an electrical sensing signal and an electrical disturbance signal, the electrical sensing signal obtained from a first sensing device of a micromechanical sensing structure of the micromechanical semiconductor sensing device, wherein the electrical disturbance signal is obtained for a second sensing device embedded in the micromechanical sensing structure, wherein the electrical sensing signal is responsive to an external force on the micromechanical semiconductor sensing device, and wherein the electrical disturbance signal is responsive to a ...

MEMS DEVICES AND PROCESSES

A MEMS transducer structure comprises a substrate comprising a cavity. A membrane layer is supported relative to the substrate to provide a flexible membrane. A peripheral edge of the cavity defines at least one perimeter region that is convex with reference to the center of the cavity. The peripheral edge of the cavity may further define at least one perimeter region that is concave with reference to the center of the cavity. 1. A MEMS transducer structure comprising:a substrate, the substrate comprising a cavity;a membrane layer supported relative to the substrate to provide a flexible membrane;wherein a peripheral edge of the cavity defines at least one perimeter region that is convex with reference to the center of the cavity.2. A MEMS transducer as claimed in claim 1 , wherein the peripheral edge of the cavity further defines at least one perimeter region that is concave with reference to the center of the cavity.3. A MEMS transducer as claimed in claim 1 , wherein the membrane comprises an active central region and a plurality of support arms which extend laterally from the active central region for supporting the active central region of the membrane.4. A MEMS transducer as claimed in claim 3 , wherein a convex portion of the peripheral edge of the cavity underlies a center region of a support arm of the membrane.5. A MEMS transducer as claimed in claim 4 , wherein the apex of a convex portion substantially underlies the center of a supporting arm in a width wise direction.6. A MEMS transducer as claimed in claim 3 , wherein a concave portion of the peripheral edge of the cavity underlies an edge of a support arm.7. A MEMS transducer as claimed in claim 3 , wherein a convex portion is positioned around the periphery of the cavity such that claim 3 , upon deflection of the flexible membrane during use towards the cavity claim 3 , the flexible membrane makes contact with the convex portion of the peripheral edge of the cavity prior to another portion of the ...

Strain detection element, pressure sensor, microphone, blood pressure sensor, and touch panel

A strain detection element is provided above a deformable membrane. Moreover, this strain detection element includes an electrode and a stacked body, the stacked body including: a first magnetic layer whose magnetization direction is variable according to a deformation of the membrane; a second magnetic layer provided facing the first magnetic layer; and an intermediate layer provided between these first magnetic layer and second magnetic layer, and at least part of the first magnetic layer is amorphous, and the electrode includes a metal layer configured from a Cu—Ag alloy.

Planar cavity mems and related structures, methods of manufacture and design structures

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

MEMS DEVICE HAVING A MICROPHONE STRUCTURE, AND METHOD FOR THE PRODUCTION THEREOF

A microphone structure of an MEMS device has a layer construction including: a base substrate; a deflectable microphone diaphragm at least partly spanning a through-opening in the substrate; a deflectable electrode of a microphone condenser system; a stationary counter-element having ventilation openings situated in the layer construction over the microphone diaphragm and acting as a bearer for a stationary electrode of the microphone condenser system. The diaphragm is bonded into the layer construction on the substrate via a flexible beam. The otherwise free edge region of the diaphragm is curved in a pan shape, so that it extends both vertically and also in some regions laterally beyond the edge region of the through-opening, and the edge region of the through-opening forms a lower stop for the diaphragm movement. 1. A MEMS device having a microphone structure realized in a layer construction on a base substrate , comprising:the base substrate;a deflectable microphone diaphragm which (i) at least partly spans a through-opening in the base substrate, and (ii) is provided with at least one deflectable electrode of a microphone condenser system; anda stationary counter-element having ventilation openings which are situated in the layer construction over the microphone diaphragm, the stationary counter-element acting as a bearer for at least one stationary electrode of the microphone condenser system;wherein the mid-region of the microphone diaphragm is fashioned essentially plane-parallel to the substrate plane, and in the rest state the mid-region of the microphone diaphragm is situated inside the through-opening in the base substrate, and wherein the microphone diaphragm is bonded into the layer construction on the base substrate via at least one flexible beam, and wherein a free edge region of the microphone diaphragm is curved in the manner of a pan so that the free edge region extends both vertically and, at least in some areas, also laterally beyond the edge ...

Layer structure and method of manufacturing a layer structure

A layer structure may include a carrier, a two-dimensional layer, and a holding structure. The holding structure is arranged on the carrier and holds the two-dimensional layer on the carrier such that at least a portion of the two-dimensional layer is spaced apart from the carrier. The holding structure includes a holding portion extending from the two-dimensional layer towards the carrier beyond the at least a portion of the two-dimensional layer spaced apart from the carrier.

PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity. 1. A structure , comprising:at least one fixed plate;an insulator layer covering the at least one fixed plate; and{'sub': '3', 'a TiN/TiAllayer between the at least one fixed plate and the insulator layer,'}wherein the insulator layer has a tapered profile.2. The structure of claim 1 , further comprising:at least one beam that is moveable over the at least one fixed plate; anda chamber over the at least one beam.3. The structure of claim 1 , wherein the at least one fixed plate is a patterned wiring layer.4. The structure of claim 1 , wherein the insulator layer is one or more films over the at least one fixed plate and exposed portions of an underlying substrate.5. The structure of claim 1 , wherein the at least one fixed plate contains aluminum.6. The structure of claim 1 , wherein the insulator layer comprises AlO(alumina).7. The structure of claim 1 , wherein the insulator layer covers sidewall surfaces of the at least one fixed plate.8. The structure of claim 1 , wherein the insulator layer is structured to prevent formation of aluminum silicide with a sacrificial material deposition.9. The structure of claim 1 , wherein the insulator layer is a conformal barrier comprising TaO(tantalum pentaoxide).10. The structure of claim 1 , wherein the at least one fixed plate includes an undercut of AlCu.11. The ...

PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending. 1. A method of forming a Micro-Electro-Mechanical System (MEMS) , comprising:forming a beam;forming a first sacrificial layer on the beam;forming an insulator layer on the first sacrificial layer;forming a cavity via in the insulator layer, exposing a portion of the first sacrificial layer;forming an electrode on the insulator layer;forming a second sacrificial layer over the beam and in the cavity via;forming a lid material over the second sacrificial layer and the electrode; andproviding a vent hole in the lid material to expose at least the second sacrificial layer; andventing the first sacrificial layer and the second sacrificial layer to form at least a lower cavity and an upper cavity.2. The method of claim 1 , wherein the beam and the upper cavity are remote from the electrode.3. The method of claim 1 , wherein the vent hole is rounded or chamfered.4. The method of claim 1 , wherein the vent hole is octagonal.5. The method of claim 1 , wherein the first sacrificial layer and the second sacrificial layer are silicon material.6. The method of claim 1 , further comprising performing a hafnium clean to remove oxide and hydrogen on exposed surfaces of the second sacrificial layer prior to venting the first sacrificial layer and the second sacrificial layer.7. The method of claim 6 , wherein the venting the first sacrificial layer and the second sacrificial layer is a selective etch to silicon material.8. The method of claim 1 , wherein the vent hole is provided greater than 5 ...

MICRO-ELECTROMECHANICAL TRANSDUCER

A micro-electromechanical transducer including one or more moveable members, and a viscoelastic substance having a predetermined viscoelasticity, the viscoelastic substance being adapted to influence the response of the transducer in a predetermined manner. The micro-electromechanical transducer of the present invention may include a MEMS transducer, such as a MEMS microphone, a MEMS vibration sensor, a MEMS acceleration sensor, a MEMS receiver. 120-. (canceled)21. A micro-electromechanical transducer comprising:one or more moveable members, anda viscoelastic substance having a predetermined viscoelasticity, wherein the one or more moveable members are configured to provide stretch or shear to the viscoelastic substance, and wherein the viscoelasticity of the viscoelastic substance is selected so as to damp a resonance peak of the transducer in a predetermined manner.22. A micro-electromechanical transducer according to claim 21 , wherein the one or more moveable members comprise a hinged portion and a free hanging portion.23. A micro-electromechanical transducer according to claim 21 , wherein gaps are provided between the one or more moveable members and/or between the one or more moveable members and a frame structure.24. A micro-electromechanical transducer according to claim 23 , wherein the viscoelastic substance is arranged to seal at least part of the gaps provided between the one or more moveable members and/or to seal at least part of the gaps provided between the one or more moveable members and the frame structure.25. A micro-electromechanical transducer according to claim 24 , wherein the viscoelastic substance is arranged to form one or more suspension members for at least one moveable member.26. A micro-electromechanical transducer according to claim 21 , further comprising one or more moveable masses for influencing the response of the transducer claim 21 , wherein the one or more moveable masses are secured to respective ones of the one or more ...

Suspended type nanowire and manufacturing method thereof

Provided is a suspended type nanowire that is fixed and electrically connected to each of a first electrode disposed on a substrate and a second electrode disposed on the substrate and spaced apart from the first electrode and suspended on the substrate. Here, a cross-section in a direction perpendicular to a longitudinal direction of the suspended type nanowire includes at least one curved part, and the curve part includes a reference surface and at least one side surface extending downward from the reference surface.

MEMS COMPONENT INCLUDING A SOUND-PRESSURE-SENSITIVE DIAPHRAGM ELEMENT

A MEMS microphone component including at least one sound-pressure-sensitive diaphragm element is formed in the layer structure of the MEMS component, which spans an opening in the layer structure. The diaphragm element is attached via at least one column element in the central area of the opening to the layer structure of the component. The deflections of the diaphragm element are detected with the aid of at least one piezosensitive circuit element, which is implemented in the layer structure of the diaphragm element and is situated in the area of the attachment of the diaphragm element to the column element. 1. A MEMS component , comprising:a layer structure;at least one sound-pressure-sensitive diaphragm element formed in the layer structure, the diaphragm element spanning an opening in the layer structure and being attached to the layer structure of the component via at least one column element in a central area of the opening;at least one piezosensitive circuit element to detect deflections of the diaphragm element, the piezosensitive element implemented in the layer structure of the diaphragm element and being situated in an area of the attachment of the diaphragm element to the column element.2. The MEMS component as recited in claim 1 , wherein the column element situated essentially at least one of centrally or eccentrically in the opening and with respect to the diaphragm area.3. The MEMS component as recited in claim 1 , wherein the diaphragm element extends on all sides at least up to an edge of the opening in the layer structure.4. The MEMS component as recited in claim 1 , wherein the diaphragm element includes multiple paddle-like diaphragm elements claim 1 , which are each connected at one end to the column element and extend therefrom at least up to the edge of the opening in the layer structure.5. The MEMS component as recited in claim 4 , wherein the opening includes multiple partial openings claim 4 , which are each spanned by one paddle-like ...

MEMS COMPONENT INCLUDING A DIAPHRAGM ELEMENT WHICH IS ATTACHED VIA A SPRING STRUCTURE TO THE COMPONENT LAYER STRUCTURE

Measures are provided, by which mechanical stresses within the diaphragm structure of a MEMS component may be intentionally dissipated, and which additionally enable the implementation of diaphragm elements having a large diaphragm area in comparison to the chip area. The diaphragm element is formed in the layer structure of the MEMS component. It spans an opening in the layer structure and is attached via a spring structure to the layer structure. The spring structure includes at least one first spring component, which is oriented essentially in parallel to the diaphragm element and is formed in a layer plane below the diaphragm element. Furthermore, the spring structure includes at least one second spring component, which is oriented essentially perpendicularly to the diaphragm element. The spring structure is designed in such a way that the area of the diaphragm element is greater than the area of the opening which it spans. 1. A MEMS component , comprising:a layer structure;at least one diaphragm element formed in the layer structure, the diaphragm element spans an opening in the layer structure and is attached via a spring structure to the layer structure;wherein the spring structure includes at least one first spring component which is oriented essentially in parallel to the diaphragm element and is formed in a layer plane below the diaphragm element, the spring structure includes at least one second spring component, which is oriented essentially perpendicularly to the diaphragm element, and the spring structure is designed in such a way that the area of the diaphragm element is greater than the area of the opening which the diaphragm element spans.2. The MEMS component as recited in claim 1 , wherein the diaphragm element is essentially closed.3. The MEMS component as recited in claim 1 , wherein the first spring component is essentially closed.4. The MEMS component as recited in claim 1 , wherein openings claim 1 , which enable a slow pressure equalization ...

PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending. 1. A Micro-Electro-Mechanical System (MEMS) structure comprising a moveable beam comprising at least one insulator layer on a lower electrode such that a volume of the lower electrode is adjusted to modify beam bending characteristics; andan upper electrode over the at least one insulator layer on top of the lower electrode,wherein the modified beam bending characteristics are provided over an entire temperature range including a lower limit of about −55° C. to an upper limit of about 125° C., andthe lower electrode has a slotted layout and the upper electrode is thinned to match a metal volume of the lower electrode with a metal volume of the upper electrode.2. The MEMS structure of claim 1 , wherein the metal volume of the lower electrode and the metal volume of the upper electrode are further based at least on a layout of the upper electrode.3. The MEMS structure of claim 2 , wherein the lower electrode and the upper electrode are formed of a same material.4. The MEMS structure of claim 2 , wherein the lower electrode and the upper electrode have identical layouts and same thicknesses.5. The MEMS structure of claim 1 , wherein the moveable beam is formed from one or more metal layers claim 1 , comprising a top metal and a bottom metal with an oxide layer therebetween.6. The MEMS structure of claim 1 , wherein the lower electrode is in a trench.7. The MEMS structure of claim 1 , wherein the lower electrode and the upper electrode are composed of Ti/AlCu/Ti/TiN.8. The MEMS ...

PIEZOELECTRIC MEMS DIAPHRAGM MICROPHONE

A piezoelectric microelectromechanical systems diaphragm microphone can be mounted on a printed circuit board. The microphone can include a substrate with an opening between a bottom end of the substrate and a top end of the substrate. The microphone can have two or more piezoelectric film layers disposed over the top end of the substrate and defining a diaphragm structure. Each of the two or more piezoelectric film layers can have a predefined residual stress that substantially cancel each other out so that the diaphragm structure is substantially flat with substantially zero residual stress. The microphone can include one or more electrodes disposed over the diaphragm structure. The diaphragm structure is configured to deflect when the diaphragm is subjected to sound pressure via the opening in the substrate. 1. A piezoelectric microelectromechanical systems diaphragm microphone , comprising:a substrate defining an opening between a bottom end of the substrate and a top end of the substrate;two or more piezoelectric film layers disposed over the top end of the substrate and defining a diaphragm structure, each of the two or more piezoelectric film layers having a predefined residual stress that substantially cancel each other out so that the diaphragm structure is substantially flat with substantially zero residual stress; andone or more electrodes disposed over the diaphragm structure,wherein the diaphragm structure is configured to deflect when the diaphragm structure is subjected to sound pressure via the opening in the substrate.2. The microphone of wherein the diaphragm structure has a circular shape.3. The microphone of wherein the one or more electrodes disposed over the diaphragm structure include a circumferential electrode disposed over a circumference of the diaphragm structure and a center electrode disposed generally over a center of the diaphragm structure claim 2 , at least a portion of the center electrode spaced apart from the circumferential ...

MICROELECTROMECHANICAL SENSOR DEVICE WITH IMPROVED STABILITY TO STRESS

A microelectromechanical sensor device has a detection structure including: a substrate having a first surface; a mobile structure having an inertial mass suspended above the substrate at a first area of the first surface so as to perform at least one inertial movement with respect to the substrate; and a fixed structure having fixed electrodes suspended above the substrate at the first area and defining with the mobile structure a capacitive coupling to form at least one sensing capacitor. The device further includes a single monolithic mechanical-anchorage structure positioned at a second area of the first surface separate from the first area and coupled to the mobile structure, the fixed structure, and the substrate and connection elements that couple the mobile structure and the fixed structure mechanically to the single mechanical-anchorage structure. 1. A microelectromechanical sensor device , comprising:a substrate having a first surface with a first area and a second area, the second area positioned outside of the first area in a lateral direction;a mobile structure including an inertial mass suspended above the substrate at the first area of the top surface;a fixed structure including fixed electrodes suspended above the substrate at the first area of the top surface;at least one sensing capacitor including the mobile structure capacitively coupled to the fixed structure;a single monolithic anchor coupled to the substrate at the second area, the single monolithic anchor coupled to the mobile structure and the fixed structure; anda plurality of connection elements coupled to the mobile structure, the fixed structure, and to the single monolithic anchor.2. The microelectromechanical sensor device according to claim 1 , further comprising:a supporting element; a first connection element and a second connection element coupled to a respective set of the fixed electrodes and the single monolithic anchor; and', 'a third connection element coupled to the ...

MICRO MECHANICAL DEVICES WITH AN IMPROVED RECESS OR CAVITY STRUCTURE

A sensor includes a first substrate and a second substrate. The first substrate includes a first side and an opposing second side, with the first side having a recess. The recess is defined by one or more side walls and a bottom wall. One or more of the side walls are substantially perpendicular to the bottom wall. A sensing diaphragm is defined between the second side of the first substrate and the bottom wall of the recess. A boss extends from the bottom wall of the recess. The second substrate may include a first side and an opposing second side, where the first side has a recess. The first side of the first substrate may be secured to the first side of the second substrate such that the recess in the first substrate faces and is in fluid communication with the recess in the second substrate. 120-. (canceled)21. A sensor , comprising: a first side and an opposing second side, the first side having a recess;', 'the recess defined by one or more side walls and a bottom wall, wherein the one or more side walls are substantially perpendicular to the bottom wall;', 'a sensing diaphragm defined between the second side of the first substrate and the bottom wall of the recess;', 'a boss extending from the bottom wall of the recess and into the recess, the boss defined by side walls, wherein the side walls of the boss are substantially perpendicular to the bottom wall of the recess;, 'a first substrate comprising a first side and an opposing second side;', 'the first side having a recess;, 'a second substrate comprisingwherein the first side of the first substrate is secured to the first side of the second substrate such that the recess in the first substrate faces and is in fluid communication with the recess in the second substrate;wherein the sensing diaphragm is positioned above the boss, wherein an oxide layer is positioned between the sensing diaphragm and the boss.22. The sensor of claim 21 , wherein the recess in the second substrate is in registration with the ...

Planar cavity mems and related structures, methods of manufacture and design structures

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

MICRO-ELECTRO-MECHANICAL DEVICE AND MANUFACTURING PROCESS THEREOF

A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body. 118.-. (canceled)19. A method , comprising:forming a first buried cavity in a monolithic body of semiconductor material; andforming a sensitive region in the monolithic body facing the first buried cavity, wherein forming the sensitive region includes forming a single trench that extends into the monolithic body as far as the first buried cavity, the single trench extending around the sensitive regions so that a first end of the single trench overlaps a second end of the single trench.20. The method of claim 19 , further comprising forming a second buried cavity in the sensitive region claim 19 , the second buried cavity overlapping the first buried cavity.21. The method of claim 19 , further comprising coupling a perimeter of a membrane to the sensitive region claim 19 , the membrane being arranged over the sensitive region.22. The method of claim 21 , wherein the membrane is spaced apart from the sensitive region by a cavity.23. The method of claim 19 , further comprising coupling a cap element to a surface of the peripheral portion of the monolithic body.24. The method of claim 19 , wherein the single trench has a spiral shape that extends around an entire perimeter of the sensitive region.25. The method of claim 24 , wherein the single trench has a first end portion and a second end portion claim 24 , the first end portion and the second end portion extending along a same side of the sensitive region.26. A method claim 24 , comprising:forming a buried cavity in a monolithic body ...

MEMS DEVICE MANUFACTURING METHOD, MEMS DEVICE, AND SHUTTER APPARATUS USING THE SAME

Provided is a method including at least the thermal treatment step of thermally treating a SOI substrate having a first silicon layer at a first temperature that the diffusion flow rate of an interstitial silicon atom in a silicon single crystal is higher than the diffusion flow rate of an interstitial oxygen atom and the processing step of processing the SOI substrate after the thermal treatment step to obtain a displacement enlarging mechanism. 1. A MEMS device manufacturing method comprising: at leasta thermal treatment step of thermally treating a substrate having a silicon layer at a first temperature that a diffusion flow rate of an interstitial silicon atom in a silicon single crystal is higher than a diffusion flow rate of an interstitial oxygen atom; anda processing step of processing the substrate after the thermal treatment step to obtain a MEMS device.2. The MEMS device manufacturing method according to claim 1 , whereinat the step performed after the thermal treatment step, a temperature applied to the silicon layer is equal to or lower than a second temperature that the diffusion flow rate of the interstitial oxygen atom in the silicon single crystal is higher than the diffusion flow rate of the interstitial silicon atom and precipitated oxide contained in the silicon layer does not substantially grow.3. The MEMS device manufacturing method according to claim 1 , whereinthe substrate is a multilayer bonded substrate configured such that a handle layer, an insulating layer, and a device layer are stacked on each other in this order, andthe device layer is the silicon layer, and is formed using a silicon substrate manufactured by a Czochralski (CZ) method.4. The MEMS device manufacturing method according to claim 1 , wherein{'sup': 17', '3', '18', '3, 'the silicon layer contains a predetermined concentration of oxygen, and the predetermined concentration is in a range of 5×10/cmto 1×10/cm.'}5. The MEMS device manufacturing method according to claim 1 , ...

NON-DESTRUCTIVE DETECTING DEVICE FOR COMPONENT RESIDUAL STRESS GRADIENT

The present disclosure relates to the technical field of non-destructive detecting of residual stress, and in particular to a non-destructive detecting device for component residual stress gradient. the non-destructive detecting device comprises: groups of transmitting transducers and receiving transducers arranged symmetrically to each other, the transmitting transducers closer to the symmetry axis have greater excitation frequencies; an acoustic wedge coupled to the groups of transmitting transducers and receiving transducers, wherein groups of cylindrical transmitting tunnels and receiving tunnels are provided obliquely within the transmitting connection area and the receiving connection area through their top surfaces and toward their bottom surfaces, the transmitting transducers are coupled to the transmitting tunnels in a one-to-one correspondence, the receiving transducers are coupled to the receiving tunnels in a one-to-one correspondence, and the bottom surfaces of the transmitting connection area and the receiving connection area are pressed against the surface of the detected component; and a calculation processing module electrically connected to the transmitting transducers and the receiving transducers. The non-destructive detecting device solves the problem that the residual stress values of components at different penetration depths cannot be detected at the same time. 1. A non-destructive detecting device for component residual stress gradient , comprising:groups of transmitting transducers and receiving transducers, wherein one transmitting transducer and one receiving transducer arranged symmetrically to each other forms a group, symmetry axes of the groups coincide, the transmitting transducers of different groups have different excitation frequencies, and the transmitting transducers closer to the symmetry axis have greater excitation frequencies;an acoustic wedge coupled to the groups of transmitting transducers and receiving transducers, ...

Mems device and process

A MEMS capacitive transducer with increased robustness and resilience to acoustic shock. The transducer structure includes a flexible membrane supported between a first volume and a second volume, and at least one variable vent structure in communication with at least one of the first and second volumes. The variable vent structure includes at least one moveable portion which is moveable in response to a pressure differential across the moveable portion so as to vary the size of a flow path through the vent structure. The variable vent may be formed through the membrane and the moveable portion may be a part of the membrane, defined by one or more channels, that is deflectable away from the surface of the membrane. The variable vent is preferably closed in the normal range of pressure differentials but opens at high pressure differentials to provide more rapid equalisation of the air volumes above and below the membrane.

Micromechanical Structure and Method for Fabricating the Same

A micromechanical structure includes a substrate and a functional structure arranged at the substrate. The functional structure has a functional region configured to deflect with respect to the substrate responsive to a force acting on the functional region. The functional structure includes a conductive base layer and a functional structure comprising a stiffening structure having a stiffening structure material arranged at the conductive base layer and only partially covering the conductive base layer at the functional region. The stiffening structure material includes a silicon material and at least a carbon material. 1. A micro mechanical structure comprising:a substrate; anda functional structure arranged at the substrate;wherein the functional structure comprises a functional region configured to deflect with respect to the substrate responsive to a force acting on the functional region;wherein the functional structure comprises a conductive base layer;wherein the functional structure comprises a stiffening structure having a stiffening structure material arranged at the conductive base layer and only partially covering the conductive base layer at the functional region; andwherein the stiffening structure material comprises a silicon material and at least a carbon material.2. The micro mechanical structure according to claim 1 , wherein the stiffening structure material comprises the carbon material with a concentration that is at least 1% of the concentration of the silicon material.3. The micro mechanical structure according to claim 1 , wherein the stiffening structure material additionally comprises at least one of a nitrogen material claim 1 , an oxygen material claim 1 , a titanium material claim 1 , a molybdenum material and a tantalum material with a material concentration.4. The micro mechanical structure according to claim 3 , wherein the material concentration varies along a thickness direction of the stiffening structure.5. The micro mechanical ...

Microelectromechanical system device

A microelectromechanical system (MEMS) device includes a substrate and at least one MEMS unit disposed on the substrate. The MEMS unit includes at least one first electrode, at least one second electrode, at least one landing element, and a hinge layer. The first electrode is disposed on the substrate. The second electrode is disposed on the substrate. The landing element is disposed on the substrate. The hinge layer includes a hinge portion and at least one cantilever portion. The hinge portion is connected to the second electrode. The cantilever portion is connected to the hinge portion. The cantilever portion has a first opening and at least one spring disposed in the first opening and connected to at least one side of the first opening. When a voltage difference exists between the first electrode and the second electrode, the hinge portion is distorted and the spring thus touches the landing element.

ACTUATOR DEVICE

An actuator device includes a support portion, a movable portion, a connection portion which connects the movable portion to the support portion on a second axis so that the movable portion is swingable about the second axis, a first wiring which is provided on the connection portion, and a second wiring which is provided on the support portion. The rigidity of a first metal material forming the first wiring is higher than that of a second metal material forming the second wiring. The second wiring is connected to a surface opposite to the support portion in a first connection part located on the support portion in the first connection part. 1. An actuator device comprising:a support portion;a movable portion;a connection portion which connects the movable portion to the support portion on a predetermined axis so that the movable portion is swingable about the axis;a first wiring which is provided on the connection portion; anda second wiring which is provided on the support portion,wherein rigidity of a first metal material forming the first wiring is higher than that of a second metal material forming the second wiring, andwherein the second wiring is connected to a surface opposite to the support portion in a first connection part located on the support portion in the first wiring.2. The actuator device according to claim 1 ,wherein the first connection part is separate from the axis by a predetermined distance.3. The actuator device according to claim 2 ,wherein the distance is larger than ½ times a minimum width of the connection portion.4. The actuator device according to claim 1 ,wherein a cross-sectional area of the first wiring is larger than a cross-sectional area of the second wiring.5. The actuator device according to claim 4 ,wherein a width of the first wiring is larger than a width of the second wiring.6. The actuator device according to claim 1 , further comprising:a coil which is provided with the movable portion;a magnetic field generator which ...

ACTUATOR DEVICE

An actuator device includes: a support portion; a movable portion; a first connection portion connecting the movable portion to the support portion on a first axis so that the movable portion is swingable around the first axis; and a first wiring provided on the first connection portion. The first wiring includes a first main body formed of a metal material having a Vickers hardness of 50 HV or more. The first main body includes a first surface facing the first connection portion and a second surface other than the first surface. The second surface has a shape in which a curvature is continuous over the entire second surface in a cross-section perpendicular to an extension direction of the first wiring. 1. An actuator device comprising:a support portion;a movable portion;a first connection portion connecting the movable portion to the support portion on a first axis so that the movable portion is swingable around the first axis; anda first wiring provided on the first connection portion,wherein the first wiring includes a first main body formed of a metal material having a Vickers hardness of 50 HV or more,wherein the first main body includes a first surface facing the first connection portion and a second surface other than the first surface, andwherein the second surface includes at least one curved portion curved to protrude toward the first connection portion in a cross-section perpendicular to an extension direction of the first wiring.2. The actuator device according to claim 1 ,wherein the second surface intersects the first surface so as to form an acute angle in a cross-section perpendicular to the extension direction of the first wiring.3. The actuator device according to claim 1 ,wherein the second surface intersects the first surface so as to form an angle of 45° or less in a cross-section perpendicular to the extension direction of the first wiring.4. The actuator device according to claim 1 ,wherein the at least one curved portion includes a plurality ...

MEMS STRUCTURE WITH AN ETCH STOP LAYER BURIED WITHIN INTER-DIELECTRIC LAYER

A MEMS structure includes a substrate, an inter-dielectric layer on a front side of the substrate, a MEMS component on the inter-dielectric layer, and a chamber disposed within the inter-dielectric layer and through the substrate. The chamber has an opening at a backside of the substrate. An etch stop layer is disposed within the inter-dielectric layer. The chamber has a ceiling opposite to the opening and a sidewall joining the ceiling. The sidewall includes a portion of the etch stop layer. 1. A MEMS structure , comprising:a substrate;an inter-dielectric layer on a front side of the substrate;a MEMS component on the inter-dielectric layer;a chamber disposed within the inter-dielectric layer and through the substrate and having an opening at a backside of the substrate; and the chamber has a ceiling opposite to the opening and a sidewall joining the ceiling, and', 'the sidewall comprises a portion of the first etch stop layer., 'a first etch stop layer disposed within the inter-dielectric layer, wherein,'}2. The MEMS structure according to claim 1 , further comprising a metal structure in the inter-dielectric layer claim 1 , wherein claim 1 , the metal interconnect structure comprises a top metal layer claim 1 , a bottom metal layer and a metal layer between the top metal layer and the bottom metal layer claim 1 , and the first etch stop layer is formed to extend onto the metal layer.3. The MEMS structure according to claim 1 , further comprising a metal interconnect structure in the inter-dielectric layer claim 1 , wherein claim 1 , the metal structure comprises a first metal layer claim 1 , a second metal layer claim 1 , a third metal layer claim 1 , a fourth metal layer claim 1 , a fifth metal layer and a sixth metal layer in the order from bottom to top claim 1 , and the first etch stop layer is formed to extend onto the third or fourth metal layer.4. The MEMS structure according to claim 1 , further comprising a second etch stop layer disposed on the first ...

PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES

A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity includes forming a first sacrificial cavity layer over a wiring layer and substrate. The method further includes forming an insulator layer over the first sacrificial cavity layer. The method further includes performing a reverse damascene etchback process on the insulator layer. The method further includes planarizing the insulator layer and the first sacrificial cavity layer. The method further includes venting or stripping of the first sacrificial cavity layer to a planar surface for a first cavity of the MEMS. 1. A planar MEMS structure , comprising:a lower cavity having a planar upper surface;an upper cavity having a planar upper surface;a via connecting the upper cavity to the lower cavity;electrodes formed in the upper cavity which act as beams for the MEMS structure; anda fixed wire formed in the lower cavity, below the beams.2. The structure of claim 1 , further comprising an opening over the lower cavity.3. The structure of claim 1 , further comprising an oxide film formed over the electrodes.4. The structure of claim 1 , further comprising:an insulator material formed over the fixed wire;a first electrode of the electrodes formed over the insulator material;a second insulator material formed over the first electrode and exposed portions of the insulator material;a second electrode of the electrodes formed over the second insulator layer, and within vias to contact the first electrode;a trench in the insulator material, exposing portions of the lower cavity.5. The structure of claim 1 , wherein at least one of a corner of the upper cavity and the lower cavity are chamfered.6. The structure of claim 5 , wherein the chamfering is at a 45 degree corner angle. The invention relates to semiconductor structures and methods of manufacture and, more particularly, to planar cavity Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures.Integrated ...

PHYSICAL QUANTITY SENSOR, SENSOR DEVICE, ELECTRONIC DEVICE, AND VEHICLE

A physical quantity sensor includes a substrate, a movable body that is provided displaceably in a state of being opposed to the substrate and is provided with a first through-hole and a second through-hole as through-holes, and a protrusion configured integrally with the substrate at a side of the movable body of the substrate, and in which the protrusion is provided at a position where the protrusion overlaps the through-hole and the movable body in plan view. 1. A physical quantity sensor comprising:a substrate;a movable body that is provided displaceably in a state of being opposed to the substrate and is provided with a through-hole; anda protrusion configured integrally with the substrate at a side of the movable body of the substrate, whereinthe protrusion is provided at a position where the protrusion overlaps the through-hole and the movable body in plan view.2. The physical quantity sensor according to claim 1 , wherein{'b': 1', '2', '1', '2, 'W Подробнее

Sensor element, method for manufacturing sensor element, detection device, and method for manufacturing detection device

There is provided a sensor element including: a semiconductor base member having a first main surface and a second main surface located opposite to the first main surface, and having a cavity structure formed on the second main surface side; and a detection element formed on the first main surface side in a region where the cavity structure is formed, the second main surface of the semiconductor base member including a convexly and concavely shaped portion, and a tip of a convex portion of the convexly and concavely shaped portion having a curved shape.

MEMS Sensor, Especially Pressure Sensor

A MEMS sensor with improved overload resistance for metrological registering of a measured variable comprises a plurality of layers, especially silicon layers, arranged on one another. The layers include at least one inner layer, which is arranged between a first layer and a second layer, and in the inner layer there is provided extending perpendicularly to the plane of the inner layer through the inner layer at least one cavity, on which borders externally at least sectionally and forming a connecting element, a region of the inner layer, which is connected with the first layer and the second layer. A lateral surface of the connecting element externally at least sectionally bordering the cavity has in an end region facing the first layer a rounding decreasing the cross sectional area of the cavity in the direction of the first layer, and has in an end region facing the second layer a rounding decreasing the cross sectional area of the cavity in the direction of the second layer. 115-. (canceled)16. A MEMS sensor for metrological registering of a measured variable , comprising:a plurality of layers arranged on one another, wherein:said plurality of layers include at least one inner layer, which is arranged between a first layer and a second layer, andin said inner layer there is provided extending perpendicularly to the plane of said inner layer through said inner layer at least one annular cavity, on which borders externally and forming a connecting element, a region of said inner layer, which is connected with said first layer and said second layer, and which surrounds said cavity annularly; said connecting element in the region of said inner layer is isolated by said cavity completely from an additional region surrounded by said cavity; anda lateral surface of said connecting element externally bordering said cavity has in an end region facing said first layer a rounding decreasing the cross sectional area of said cavity in the direction of said first layer, and ...

MEMS DEVICE AND PROCESS

The application describes improvements to (MEMS) transducers () having a flexible membrane () with a membrane electrode (), especially where the membrane is crystalline or polycrystalline and the membrane electrode is metal or a metal alloy. Such transducers may typically include a back-plate having at least one back-plate layer () coupled to a back-plate electrode (), with a plurality of holes () in the back-plate electrode corresponding to a plurality back-plate holes () through the back-plate. In embodiments of the invention the membrane electrode has at least one opening () in the membrane electrode wherein, at least part of the area of the opening corresponds to the area of at least one back-plate hole, in a direction normal to the membrane, and there is no hole in the flexible membrane at said opening in the membrane electrode. There may be a plurality of such openings. The openings effectively allow a reduction in the amount of membrane electrode material, e.g. metal, that may undergo plastic deformation and permanently deform the membrane. The openings are at least partly aligned with the back-plate holes to minimise any loss of capacitance. 142.-. (canceled)44. The MEMS transducer as claimed in claim 43 , wherein the MEMS transducer comprises a flexible membrane to which the membrane electrode is coupled.45. The MEMS transducer as claimed in claim 43 , wherein the MEMS transducer comprises a backplate claim 43 , wherein the backplate electrode is supported by the backplate.46. The MEMS transducer as claimed in claim 45 , wherein the holes in the backplate electrode correspond to a plurality of backplate holes through the backplate.47. The MEMS transducer as claimed in wherein said flexible membrane comprises a crystalline or polycrystalline material.48. The MEMS transducer as claimed in wherein said flexible membrane comprises silicon nitride.49. The MEMS transducer as claimed in wherein said flexible membrane has intrinsic stress.50. The MEMS transducer as ...

MICROMECHANICAL SENSOR CORE FOR AN INERTIAL SENSOR

A micromechanical sensor core for an inertial sensor, having a movable seismic mass, a defined number of anchor elements, by which the seismic mass is fastened on a substrate, a defined number of stop devices fastened on the substrate for stopping the seismic mass, a first springy stop element, a second springy stop element and a solid stop element being developed on the stop device. The stop elements are designed in such a way that the seismic mass is able to strike in succession against the first springy stop element, the second springy stop element and the solid stop element. 1. A micromechanical sensor core for an inertial sensor , comprising:a movable seismic mass;a defined number of anchor elements, by which the seismic mass is fastened on a substrate;a defined number of stop devices fastened on the substrate for stopping the seismic mass; anda first springy stop element, a second springy stop element and a solid stop element developed on each of the stop devices, wherein the first springy stop element, the second springy stop element, and the solid stop element being designed in such a way that the seismic mass is able to strike in succession against the first springy stop element, the second springy stop element and the solid stop element.2. The micromechanical sensor core as recited in claim 1 , wherein a stiffness of the second springy stop element is greater by a defined measure than a stiffness of the first springy stop element.3. The micromechanical sensor core as recited in claim 1 , wherein per each stop device claim 1 , respectively two springy first stop elements claim 1 , two springy second stop elements claim 1 , and two solid stop elements are developed symmetrically with respect to the seismic mass.4. The micromechanical sensor core as recited in claim 3 , wherein the defined number of stop devices includes two stop devices claim 3 , which are developed symmetrically with respect to the seismic mass.5. An inertial sensor having a micromechanical ...

Piezoelectric MEMS microphone

The present invention provides a piezoelectric MEMS microphone having a base with a cavity, a piezoelectric diaphragm, and a restraining element. The base has a ring base circumferentially forming a cavity, a support column. The piezoelectric diaphragm includes diaphragm sheets each having a fixing end connected to a support column and a free end suspended over the cavity. The restraining element has one end fixedly connected to the free end, the other end connected to the part on the base that is not connected to the fixing end. The piezoelectric MEMS microphone of the invention can constrain the deformation of the diaphragm sheet, thereby improving the resonant frequency of the piezoelectric diaphragm, reducing the noise of the whole piezoelectric MEMS microphone. 1. A piezoelectric MEMS microphone comprising:a base including a ring base circumferentially forming a cavity;a piezoelectric diaphragm mounted on the base, comprising a plurality of diaphragm sheets each having a fixing end connected to the support column and a free end suspended over the cavity;a restraining element connecting the base and the piezoelectric diaphragm;a support column arranged in the cavity and spaced from the ring base; whereinthe restraining element has one end fixedly connected to the free end, and another end connected to a part of the base that is not connected to the fixing end.2. The piezoelectric MEMS microphone as described in claim 1 , wherein one end of the restraining element has one end fixedly connected to the free end claim 1 , and another end connected to the ring base.3. The piezoelectric MEMS microphone as described in claim 1 , wherein the base further comprises a plurality of support beams each having one end fixedly connected to the support column and another end connected to the ring base so as to separate the cavity into a plurality of subcavities.4. The piezoelectric MEMS microphone as described in claim 3 , wherein the restraining element has one end fixedly ...

AMORPHOUS CARBON AND ALUMINUM MEMBRANE

A membrane including at least one aluminum layer and at least one amorphous carbon layer. At least one polymer layer may also be included. Aluminum layer(s) can provide improved gas impermeability to the membrane. Amorphous carbon layer(s) can provide corrosion resistance. Polymer layer(s) can provide improved structural strength. 1. A micro electro mechanical system comprising:a. a membrane separated from a conducting layer by electrically insulative separators, forming a hollow center that is hermetically separated from gas surrounding the system;b. the membrane comprising a stack of thin film layers including an aluminum layer, a polymer layer, and an amorphous carbon layer.2. The system of claim 1 , wherein the system is a speaker or a capacitive pressure sensor.3. A membrane device comprising a stack of thin film layers including an aluminum layer claim 1 , a polymer layer claim 1 , and an amorphous carbon layer.4. The device of claim 3 , wherein hybridization of carbon in the amorphous carbon layer is:a. less than 25% sp3 hybridization; andb. greater than 75% sp2 hybridization.5. The device of claim 3 , wherein the amorphous carbon layer is a hydrogenated amorphous carbon layer.6. The device of claim 5 , wherein an atomic percent of hydrogen in the hydrogenated amorphous carbon layer is between 1% and 10%.7. The device of claim 3 , wherein the polymer is a polyimide.8. The device of claim 3 , wherein:a. a mass percent of aluminum in the aluminum layer is at least 95%;b. a mass percent of polymer in the polymer layer is at least 95%;c. a mass percent of carbon and hydrogen in the amorphous carbon layer is at least 95%.9. The device of claim 3 , wherein:a. the amorphous carbon layer comprises a first amorphous carbon layer and a second amorphous carbon layer;b. the aluminum layer comprises a first aluminum layer and a second aluminum layer; andc. an order of the layers in the stack of thin film layers is the first amorphous carbon layer, the first aluminum layer ...

MICROMECHANICAL COMPONENT AND METHOD FOR MANUFACTURING A MICROMECHANICAL COMPONENT

A micromechanical component comprising a substrate having a main plane of extension, comprising a movable element, and comprising a spring arrangement assemblage is provided, the movable element being attached to the substrate by way of the spring arrangement assemblage, the movable element being deflectable out of a rest position into a deflection position, the movable element encompassing a first sub-element and a second sub-element connected to the first sub-element, the first sub-element extending mainly along the main plane of extension of the substrate, the second sub-element extending mainly along a functional plane, the functional plane being disposed substantially parallel to the main plane of extension of the substrate, the functional plane being spaced away from the main plane of extension. 1. A micromechanical component , comprising:a substrate having a main plane of extension;a movable element;a spring arrangement assemblage, the movable element being attached to the substrate by the spring arrangement assemblage, the movable element being deflectable out of a rest position into a deflection position;wherein the movable element includes a first sub-element and a second sub-element connected to the first sub-element, the first sub-element extending mainly along the main plane of extension of the substrate,wherein the second sub-element extends mainly along a functional plane, which is disposed substantially parallel to the main plane of extension of the substrate, the functional plane being spaced away from the main plane of extension.2. The micromechanical component of claim 1 , wherein the movable element includes a third sub-element connected to the second sub-element claim 1 , the third sub-element extending mainly along a further functional plane claim 1 , the further functional plane being disposed substantially parallel to the main plane of extension of the substrate claim 1 , the further functional plane being spaced away from the functional ...

MICROMECHANICAL SENSOR THAT INCLUDES A STRESS DECOUPLING STRUCTURE

A micromechanical sensor is described that includes: a substrate; a first functional layer that is situated on the substrate; a second functional layer that is situated on the first functional layer and that includes movable micromechanical structures; a cavity in the substrate that is situated below the movable mechanical structures; and a vertical trench structure that surrounds the movable micromechanical structures of the second functional layer and extends into the substrate down to the cavity. 110.-. (canceled)11. A micromechanical sensor , comprising:a substrate;a first functional layer situated on the substrate;a second functional layer situated on the first functional layer and including movable micromechanical structures;a cavity in the substrate that is situated below the movable mechanical structures; anda vertical trench structure that surrounds the movable micromechanical structures of the second functional layer and extends into the substrate down to the cavity.12. The micromechanical sensor as recited in claim 11 , further comprising:a diaphragm that is at least one of vertically anchored and laterally anchored on the substrate, wherein the diaphragm is formed in the first functional layer and delimited by the trench structure.13. The micromechanical sensor as recited in claim 11 , further comprising:situating fixing elements of the movable micromechanical structures on the first functional layer, wherein the fixing elements of the first functional layer on the substrate are situated essentially one above the other.14. The micromechanical sensor as recited in claim 11 , wherein the cavity is provided by one of an APSM cavity claim 11 , an SON cavity claim 11 , and a cSOI substrate.15. The micromechanical sensor as recited in claim 11 , further comprising:a bridging element for bridging the vertical trench structure.16. The micromechanical sensor as recited in claim 15 , wherein the bridging element includes a spring-like form.17. The micromechanical ...

MEMS microphone and manufacturing method for making same

The present invention provides a manufacturing method for MEMS structure. The method includes steps of: S: providing a substrate, including a structural layer and a silicon-based layer overlapped with the structural layer; S: carrying out a main etching process for etching out a cavity hole from an end of the silicon-based layer, which is far away from the structural layer, in a direction toward the structural layer until the cavity hole contacts the structural layer; and S: carrying out an over-etching process for deepening the cavity hole and control an included angle α between a side wall of the cavity hole and the structural layer to be larger than 10° but smaller than 90°. The invention also provides a MEMS structural and a MEMS microphone manufactured by the method. 1. A manufacturing method for MEMS structure , comprising following steps:{'b': '1', 'S: providing a substrate, including a structural layer and a silicon-based layer overlapped with the structural layer;'}{'b': '2', 'S: carrying out a main etching process for etching out a cavity hole from an end of the silicon-based layer, which is far away from the structural layer, in a direction toward the structural layer until the cavity hole contacts the structural layer; and'}{'b': '3', 'S: carrying out an over-etching process for deepening the cavity hole and control an included angle α between a side wall of the cavity hole and the structural layer to be larger than 10° but smaller than 90°.'}2. The manufacturing method for MEMS structure as described in claim 1 , wherein the cavity hole is deeper than 100 μm.323. The manufacturing method for MEMS structure as described in claim 1 , wherein both of S and S use Bosch process for etching.4. A MEMS structure claim 1 , comprising a structural layer and a silicon-based layer overlapped with the structural layer claim 1 , wherein the silicon-based layer is provided with a cavity hole which penetrates the silicon-based layer claim 1 , and an included angle α ...

THIN FILM MATERIAL TRANSFER METHOD

A method of transferring a two-dimensional material such as graphene onto a target substrate for use in the fabrication of micro- and nano-electromechanical systems (MEMS and NEMS). The method includes providing the two-dimensional material in a first lower state of strain; and applying the two-dimensional material onto the target substrate whilst the two-dimensional material is under a second higher state of strain. A device comprising a strained two-dimensional material suspended over a cavity. 1. A method of applying a two-dimensional material onto a target substrate , the method comprising the steps of:a) providing the two-dimensional material in a first state of strain; andb) applying the two-dimensional material onto the target substrate whilst subjecting the two-dimensional material to a tensile stressing force which produces a second state of strain in the two-dimensional material;wherein the strain of the two-dimensional material in the second state of strain is higher than the strain of the two-dimensional material in the first state of strain.2. The method according to claim 1 , wherein the second state of strain is at least partially maintained in the two-dimensional material on the target substrate after step b).3. The method according to claim 1 , wherein step a) involves removing the two-dimensional material from an originator substrate.4. The method according to claim 1 , wherein step a) involves adhering the two-dimensional material to a transfer substrate.5. The method according to claim 4 , wherein at least a part of the two-dimensional material is freely suspended between a first part and a second part of the transfer substrate.6. The method according to claim 1 , wherein the target substrate comprises a cavity and step b) involves at least partially suspending the two-dimensional material over the cavity.7. The method according to claim 1 , wherein the first state of strain is a strain of below 0.2%.8. The method according to claim 1 , wherein ...

Rotation rate sensor, method for manufacturing a rotation rate sensor

A rotation rate sensor including a substrate, a drive structure, which is movable with regard to the substrate, a detection structure, and a Coriolis structure, the drive structure, the Coriolis structure, and the detection structure being essentially situated in a layer, in that an additional layer is situated essentially in parallel to the layer above or underneath the layer, a mechanical connection between the Coriolis structure and the drive structure being established with a first spring component, the first spring component being configured as a part of the additional layer, and/or a mechanical connection between the detection structure and the substrate being established with a second spring component, the second spring component being configured as a part of the additional layer.

MEMS DEVICE AND PROCESS

The application describes a MEMS transducer comprising a layer of conductive material provided on a surface of a layer of membrane material. The layer of conductive material comprises first and second regions, wherein the thickness and/or the conductivity of the/each first and second regions is different. 1. A MEMS transducer comprisinga substrate having a cavity;a layer of membrane material provided relative to the substrate, wherein the membrane material extends over the cavity; anda layer of conductive material provided on a surface of the layer of membrane material;the layer of conductive material comprising at least one first region having a first thickness and a first conductivity and at least one second region having a second thickness and a second conductivity, wherein the thickness and/or the conductivity of the/each first and second regions is different.2. A MEMS transducer as claimed in claim 2 , wherein the first region and the second region of the conductive material exhibit different thicknesses.3. A MEMS transducer as claimed in claim 1 , wherein the first and second regions form an electrically continuous conductive layer on the surface of the membrane4. A MEMS transducer as claimed in claim 1 , wherein the second region of the layer of conductive material comprises first and second sub-layers of conductive material.5. A MEMS transducer as claimed in claim 4 , wherein at least one of the sub-layers comprises a layer of conductive material having at least one opening.6. A MEMS transducer as claimed in claim 1 , wherein at least one first region is provided on a region of the membrane which overlies the substrate cavity.7. A MEMS transducer as claimed in claim 1 , wherein the conductive material forming the first region comprises a continuous sheet of conductive material.8. A MEMS transducer as claimed in claim 1 , wherein the conductive material forming the first region comprises a layer of conductive material having at least one opening.9. A MEMS ...

PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via. 1. A method in a computer-aided design system for generating a functional design model of a MEMS , the method comprising:generating a functional representation of an electrode remote from a beam structure;generating a functional representation of at least one sacrificial layer over the beam structure, and remote from the electrode;generating a functional representation of a lid structure over the at least one sacrificial layer and the electrode;generating a functional representation of simultaneously providing a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode;generating a functional representation of venting the sacrificial layer to form a cavity; andgenerating a functional representation of forming a final via in the lid structure to the electrode, through the partial via,wherein the partial via has a larger cross section diameter than a remaining portion of the final via, andthe functional design model of the MEMS is generated to manufacture a MEMS device.2. The method of claim 1 , further comprising:generating a functional representation of forming a sacrificial material on ...

Mirror device, scanning laser device and scanning display including same mirror device, and method for manufacturing mirror device

A mirror device includes a frame body, a shaft member provided inside the frame body and connected to the frame body at both end portions, and a reflection member fixed to the shaft member and provided so as to be capable of swinging around an axis of the shaft member. The reflection member has a base portion provided along an axial direction of the shaft member and a reflection portion provided on the base portion. The base portion has a three-dimensional uneven structure including a bottom wall portion having a main surface provided along the axial direction of the shaft member and a plurality of side wall portions extending from the bottom wall portion on the side opposite to the reflection portion.

Micromechanical mirror device

A micromechanical mirror device has: a plate-shaped mirror having a reflecting surface for reflecting light, the reflecting surface being configured to be planar; a closed frame structure supporting the plate-shaped mirror and completely framing an edge of the plate-shaped mirror; a spring arrangement having at least two spring structures arranged mirror-symmetrically and connecting the closed frame structure to a stationary support structure, the spring arrangement being configured such that the closed frame structure and the plate-shaped mirror can be brought into a resonant vibrational state with respect to the support structure; and a connecting arrangement having at least four connecting spring structures arranged mirror-symmetrically and each connecting the plate-shaped mirror to the closed frame structure; the connecting spring structures being configured to be elastically deformable and arranged such that they deform back and forth in the resonant vibrational state so that the plate-shaped mirror is partially mechanically decoupled from the closed frame structure.

PRESSURE SENSING DEVICE HAVING CONTACTS OPPOSITE A MEMBRANE

Pressure sensors that may be used in harsh or corrosive environments. One example may provide a pressure sensor having membrane with a top surface that may be free of components or electrical connections. Instead, components and electrical connections may be located under the membrane. By providing a top surface free of components and electrical connections, the top surface of the pressure sensor may be placed in harsh or corrosive environments, while components and electrical connections under the membrane may remain protected. 19-. (canceled)10. A pressure sensing device comprising:a first silicon layer having a membrane over a well area, the well area defined by a bottom of the membrane and a sidewall;a plurality of components formed in the first silicon layer, at least one of the plurality of components extending from a bottom of the first silicon layer, along the side wall, and to the bottom of the membrane;a second silicon layer below the first silicon layer, the second silicon layer having a plurality of vias aligned with contact areas on the plurality of components; anda plurality of contacts, each extending through one of the plurality of vias and contacting a contact area on one of the plurality of components.11. The pressure sensing device of wherein the plurality of components comprises implant resistors.12. The pressure sensing device of further comprising a first oxide layer between the first silicon layer and the second silicon layer.13. The pressure sensing device of further comprising a second oxide layer on the top side of the first silicon layer.14. The pressure sensing device of further comprising a third oxide layer on the bottom of the second silicon layer.15. The pressure sensing device of further comprising a protective layer over the top of the pressure sensing device.16. The pressure sensing device of wherein the plurality of contacts form electrical connections with a plurality of conductors.17. The pressure sensing device of wherein the ...

MEMS MICROPHONE AND METHOD OF MANUFACTURING THE SAME

A MEMS microphone includes a substrate having a cavity, a back plate being disposed over the substrate and having a plurality of acoustic holes, a diaphragm disposed between the substrate and the back plate, the diaphragm being spaced apart from the substrate and the back plate, covering the cavity to form an air gap between the back plate, and being configured to generate a displacement with responding to an acoustic pressure and a plurality of anchors extending from an end portion of the diaphragm to be integrally formed with the diaphragm, the anchors being arranged along a circumference of the diaphragm to be spaced apart from each other, and having lower surfaces making contact with an upper surface of the substrate to support the diaphragm. Thus, the MEMS microphone may have improved rigidity and flexiblity. 1. A MEMS microphone comprising:a substrate having a cavity;a back plate disposed over the substrate and defining a plurality of acoustic holes;a diaphragm disposed between the substrate and the back plate, the diaphragm being spaced apart from the substrate and the back plate, covering the cavity to form an air gap between the back plate, and configured to generate a displacement corresponding to an applied acoustic pressure; anda plurality of anchors extending from an end portion of the diaphragm and integrally formed with the diaphragm, the anchors arranged along a circumference of the diaphragm and spaced apart from each other, and the plurality of anchors each having lower surfaces in contact with an upper surface of the substrate to support the diaphragm.2. The MEMS microphone of claim 1 , wherein an empty space is formed between the anchors adjacent to each other to provide a passage through which the applied acoustic pressure can pass.3. The MEMS microphone of claim 1 , further comprising an upper insulation layer covering the back plate and holding the back plate to space the back plate from the diaphragm such that the air gap is maintained.4. The ...

DRIVE MODE AND SENSE MODE RESONANCE FREQUENCY MATCHING

In some embodiments, a micro electro mechanical system (MEMS) includes a proof mass, sense electrodes, sense circuitry, and a frequency matching circuitry. The proof mass is configured to move responsive to stimuli. The sense electrodes are configured to generate a signal responsive to the proof mass moving. The sense circuitry is coupled to the sense electrodes. The sense circuitry is configured to receive the generated signal and further configured to process the generated signal. The frequency matching circuitry is configured to apply a DC voltage to the sense electrodes. The DC voltage is configured to change a stiffness of a spring of the proof mass. According to some embodiments, the change in the stiffness of the spring matches a resonance frequency between a sense mode and a drive mode. According to some embodiments, the sense electrodes are a comb structure. 1. A micro electro mechanical system (MEMS) comprising:a proof mass configured to move responsive to stimuli;sense electrodes configured to generate a signal responsive to the proof mass moving;sense circuitry coupled to the sense electrodes, wherein the sense circuitry is configured to receive the generated signal and further configured to process the generated signal; anda frequency matching circuitry configured to apply a direct current (DC) voltage to the sense electrodes, wherein the DC voltage is configured to change a stiffness of a spring of the proof mass and wherein the change in the stiffness of the spring matches a resonance frequency between a sense mode and a drive mode.2. The MEMS as described in claim 1 , wherein the sense electrodes are a comb structure.3. The MEMS as described in claim 1 , wherein the frequency matching circuitry comprises:a diode;a capacitor coupled to the diode; andan NMOS switch, wherein the diode is configured to charge the capacitor when the NMOS switch is open, and wherein the NMOS switch is configured to electrically connect the capacitor to the sense electrodes ...

Method for producing a mems sensor, and mems sensor

In accordance with an embodiment, a MEMS structure is produced on a front side of a substrate. A decoupling structure which has recesses is produced in the substrate, which decoupling structure decouples a first region from a second region of the substrate in terms of stresses. In a rear side, situated opposite the front side, of the substrate, a first cavity is produced by means of a first etching process and a second cavity is produced by means of a second etching process. The first cavity and the second cavity are produced such that the second cavity encompasses the first cavity and such that the second cavity adjoins a base region of the MEMS structure and a base region of the decoupling structure.

SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF

A semiconductor package and a method of manufacturing a semiconductor package. As a non-limiting example, various aspects of this disclosure provide a semiconductor package, and a method of manufacturing thereof, that comprises a first semiconductor die, a plurality of adhesive regions spaced apart from each other on the first semiconductor die, and a second semiconductor die adhered to the plurality of adhesive regions. 120-. (canceled)21. A semiconductor device comprising:a substrate;a first semiconductor die having a top first die surface and a bottom first die surface, wherein the bottom first die surface is coupled to the substrate, and the first semiconductor die is electrically connected to the substrate; the perimeter region laterally surrounds an interior region above the top first die surface;', 'the perimeter region comprises perimeter adhesive material; and', 'the interior region is free of adhesive material; and, 'a perimeter region on a perimeter of the top first die surface, whereina second semiconductor die comprising a micro electro-mechanical systems (MEMS) device and having a top second die surface and a bottom second die surface, wherein the bottom second die surface is adhered to the perimeter adhesive material, and the second semiconductor die is electrically connected to the substrate,wherein the only material in the perimeter region is perimeter adhesive material that bridges an entire vertical gap between the top first die surface and the bottom second die surface.22. The semiconductor device of claim 21 , wherein the entire volume directly between the first semiconductor die and the second semiconductor die comprises only adhesive material and air.23. The semiconductor device of claim 21 , wherein:the perimeter adhesive material comprises a plurality of corner adhesive portions; andeach of the plurality of corner adhesive portions is positioned at a respective corner of the bottom second die surface and extends laterally outward from the ...

PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via. 1. A method of forming at least one Micro-Electro-Mechanical System (MEMS) , comprising:forming a beam over a first sacrificial layer;forming an insulator layer on the first sacrificial layer;forming a cavity via in the insulator layer, exposing a portion of the first sacrificial layer;forming an electrode on the insulator layer;forming a second sacrificial layer over the beam and in the cavity via;forming a lid material over the second sacrificial layer and the electrode;providing simultaneously a vent hole in the lid material to expose at least the second sacrificial layer and to form a partial via over the electrode;venting the first sacrificial layer and the second sacrificial layer to form at least a lower cavity and an upper cavity, respectively;sealing the vent hole with a dielectric material and a nitride cap; andforming a final via through the lid material by etching the lid material through the partial via, to the electrode,wherein the partial via is formed at a same time as the vent hole, andwherein the vent hole is provided greater than 5 microns away from both the partial via and the final via.2. The method of claim 1 , wherein the ...

Pressure sensor including deformable pressure vessel(s)

Techniques are described herein that perform pressure sensing using pressure sensor(s) that include deformable pressure vessel(s). A pressure vessel is an object that has a cross section that defines a void. A deformable pressure vessel is a pressure vessel that has at least one curved portion that is configured to structurally deform (e.g., bend, shear, elongate, etc.) based on a pressure difference between a cavity pressure in a cavity in which at least a portion of the pressure vessel is suspended and a vessel pressure in the pressure vessel.

METHOD FOR MANUFACTURING MEMS DEVICES USING MULTIPLE PHOTOACID GENERATORS IN A COMPOSITE PHOTOIMAGEABLE DRY FILM

A three-dimensional (“3D”) structure for handling fluids, a fluid handling device containing the 3D structure, and a method of making the 3D structure. The 3D structure includes a composite photoresist material that includes: (a) a first layer having a first photoacid generator therein having at least a first radiation exposure wavelength and (b) at least a second layer having a second photoacid generator therein having a second radiation exposure wavelength that is different from the first radiation exposure wavelength, and wherein the composite photoresist material is devoid of an adhesion promotion layer between layers of the composite photoresist material. 1. A three-dimensional (“3D”) structure comprising a composite photoresist material that includes: (a) a first layer having a first photoacid generator therein having at least a first radiation exposure wavelength and (b) at least a second layer having a second photoacid generator therein having a second radiation exposure wavelength that is different from the first radiation exposure wavelength , and wherein the composite photoresist material is devoid of an adhesion promotion layer between layers of the composite photoresist material.2. The 3D structure of claim 1 , wherein the composite photoresist material comprises at least a third layer of photoresist material.3. The 3D structure of claim 2 , wherein the third layer of photoresist material has a third photoacid generator therein having a third radiation exposure wavelength that is different from the first and second radiation exposure wavelengths.4. The 3D structure of claim 2 , wherein third layer photoresist material has the first photoacid generator therein having a third radiation exposure wavelength that is different from the first and second radiation exposure wavelengths.5. The 3D structure of claim 2 , wherein the third layer photoresist material has the second photoacid generator therein having the second radiation exposure wavelength.6. The 3D ...

METHOD FOR MANUFACTURING MEMS DEVICES AND NANO DEVICES WITH VARYING DEGREES OF HYDROPHOBICITY AND HYDROPHILICITY IN A COMPOSITE PHOTOIMAGEABLE DRY FILM

A three-dimensional (“3D”) structure for handling fluids, a fluid handling device containing the 3D structure, and a method of making the 3D structure. The method includes providing a composite photoresist material that includes: (a) a first layer devoid of a hydrophobicity agent and (b) at least a second layer comprising the hydrophobicity agent. The composite photoresist material is devoid of an adhesion promotion layer between layers of the composite photoresist material. 1. A three-dimensional (“3D”) structure comprising a composite photoresist material that includes: (a) a first photoresist layer devoid of a hydrophobicity agent and (b) at least a second photoresist layer comprising the hydrophobicity agent , wherein the composite photoresist material is devoid of an adhesion promotion layer between layers of the composite photoresist material.2. The 3D structure of claim 1 , wherein the composite photoresist material comprises at least a third layer of photoresist material that is devoid of a hydrophobicity agent.3. The 3D structure of claim 1 , wherein the composite photoresist material has a thickness ranging from about 6 to about 150 μm.4. The 3D structure of claim 1 , wherein each photoresist layer of the composite photoresist material is imaged with a radiation exposure wavelength selected from the group consisting of e-line claim 1 , g-line claim 1 , h-line claim 1 , i-line claim 1 , mid ultraviolet (UV) claim 1 , and deep UV radiation.5. The 3D structure of claim 1 , wherein each photoresist layer of the composite photoresist material is imaged with a different radiation exposure wavelength selected from the group consisting of e-line claim 1 , g-line claim 1 , h-line claim 1 , i-line claim 1 , mid ultraviolet (UV) claim 1 , and deep UV radiation.6. A method for making a three-dimensional (“3D”) structure from a composite photoresist film comprising the steps of:(A) applying a first layer of photoresist material to a carrier film, the first layer being ...

METHOD OF DEPOSITING NANOTWINNED NICKEL-MOLYBDENUM-TUNGSTEN ALLOYS

The present invention is directed to the synthesis of metallic nickel-molybdenum-tungsten films and coatings with direct current sputter deposition, which results in fully-dense crystallographically textured films that are filled with nano-scale faults and twins. The as-deposited films exhibit linear-elastic mechanical behavior and tensile strengths above 2.5 GPa, which is unprecedented for materials that are compatible with wafer-level device fabrication processes. The ultra-high strength is attributed to a combination of solid solution strengthening and the presence of the dense nano-scale faults and twins. These films also possess excellent thermal and mechanical stability, high density, low CTE, and electrical properties that are attractive for next generation metal MEMS applications. Deposited as coatings these films provide protection against friction and wear. The as-deposited films can also be heat treated to modify the internal microstructure and attendant mechanical properties in a way that provides a desired balance of strength and toughness. 1. A film comprising:an alloy of nickel (Ni), molybdenum (Mo), tungsten (W) (Ni—Mo—W) having very high predetermined tensile strength, thermal and mechanical stability of predetermined levels, predetermined high density, predetermined low CTE, predetermined electrical properties that are similar to the bulk alloy, and a structure of nano-scale stacking faults and twins lying in a plane of the film; andwherein the alloy is deposited as a coating or freestanding thin film or device.2. The film of wherein the deposition of the alloy is achieved with direct current sputter deposition.3. The film of further comprising a crystallographic structure possessing a predetermined strong <111> crystallographic texture and a predetermined high density of nano-scale planar defects (stacking faults and twins) oriented in the plane of the film.4. The film of further comprising a tensile strength of above 2.5 GPa.5. The film of that ...

PHYSICAL QUANTITY SENSOR, COMPLEX SENSOR, INERTIAL MEASUREMENT UNIT, PORTABLE ELECTRONIC DEVICE, ELECTRONIC DEVICE, AND VEHICLE

A physical quantity sensor includes: a movable body that includes a beam portion as a rotation shaft, a coupling portion that is connected with the beam portion and is provided in a direction intersecting with the beam portion, and a first and a second mass portions as a mass portion that are connected with the coupling portion; a first and a second fixed electrodes as a measurement electrode that are provided on a support substrate and are opposed to the first and the second mass portions; and a protrusion that is provided in a region where the first and the second fixed electrodes are provided and protrudes from the support substrate toward the first and the second mass portions, in which a length of the coupling portion in the intersecting direction is 1.4 or more times a length from the beam portion to the first and the second mass portions. 1. A physical quantity sensor comprising:a movable body that includes a rotation shaft, a coupling portion that is connected with the rotation shaft and is provided in a direction intersecting with the rotation shaft, and a mass portion that is connected with the coupling portion;a measurement electrode that is provided on a support substrate and is opposed to the mass portion; anda protrusion that is provided in a region where the measurement electrode is provided and protrudes from the support substrate toward the mass portion,wherein a length of the coupling portion in the intersecting direction is 1.4 or more times a length from the rotation shaft to the mass portion.2. The physical quantity sensor according to claim 1 ,wherein the movable body has a slit that is formed between the coupling portion and the mass portion,wherein the mass portion has an opening that penetrates in a lattice shape, andwherein an interval between the opening and the slit is wider than an interval between adjacent openings.3. The physical quantity sensor according to claim 1 ,wherein, in a plan view, the coupling portion overlaps the ...

Three-dimensional micro devices and method for their production

Three-dimensional micro devices usable as electromagnetic and magnetomechanical energy converters, as micromagnetic motors or generators, and methods for their production. The three-dimensional micro devices exhibit high efficiency even at dimensions on the microscale and below, and the method for production, as well as mass production, is simple and economical. Moreover, the three-dimensional micro devices at least include one three-dimensional device produced using roll-up technology. This three-dimensional device includes all functional and structural components for full functionality. At least one functional or structural component is an element that is at least partially freely movable at least partially within a surrounding element and is arranged such that it can be rotated at least around one of its axes.

Micro-electro-mechanical system device having differential capacitors of corresponding sizes

The invention provides a micro-electro-mechanical device having differential capacitor of corresponding sizes, which includes a substrate; a top fixed electrode; a bottom fixed electrode; a mass, having a top electrode and a bottom electrode, wherein the top electrodes form a top capacitor with the top fixed electrode and the bottom electrodes form a bottom capacitor with the bottom fixed electrode; a top fixed electrode extension wall having an upper end connected to the top fixed electrode and a lower end connected to the substrate; and a bottom fixed electrode extension wall having a lower end connected to the substrate through the bottom electrode, wherein the bottom fixed electrode extension wall has no upper end connected to the top fixed electrode, and total areas of the top fixed electrode extension wall and the top fixed electrode facing the mass are substantially equal to total areas of the bottom fixed electrode extension wall and the bottom fixed electrode facing the mass.

MEMS MICROPHONE AND METHOD FOR MANUFACTURE

An improved method for manufacturing an MEMS microphone with a double fixed electrode is specified which results in a microphone which likewise has improved properties. 1. A microphone of miniaturized MEMS designhaving a substrate comprising silicon and a patterned layer construction arranged thereon,wherein the layer construction comprises partial layers arranged one above another for the following functional layers:a bottom fixed electrode, thereabovea membrane and thereabovea top fixed electrode,wherein the membrane is areally divided intoan outer edge region,a freely oscillating region, which is completely enclosed by the outer edge region and in which the membrane is embodied in substantially planar fashion,an anchor region within the outer edge region, in which the membrane is vertically fixed between bottom and top fixed electrodes, wherein the outer edge region substantially consists of the anchor region,a connection region within the outer edge region, in which an electrical lead to the membrane is arranged,wherein a perforation is arranged through the substrate below the entire freely oscillating region, and wherein the anchor region is arranged outside the area region of the perforation above an inner edge region of the substrate.2. The microphone according to claim 1 ,wherein all partial layers of the layer construction are produced directly one above another as a layer composite assembly, and wherein the membrane is fixed in the anchor region in the original layer composite assembly.3. The microphone according to claim 1 ,wherein the membrane has in the anchor region a first bulge, by which it is supported on the bottom fixed electrode.4. The microphone according to claim 3 ,wherein the top fixed electrode has in the anchor region a second bulge, by which it is supported on the membrane.5. The microphone according to claim 3 ,wherein first and second bulges bear only loosely on the respectively adjacent partial layer of the layer construction, such that ...

PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending. 1. A Micro-Electro-Mechanical System (MEMS) structure comprising:a moveable beam comprising at least one insulator layer on a lower electrode; andan upper electrode over the at least one insulator layer,wherein the lower electrode and the upper electrode are asymmetric or different, and a thickness of one of the lower electrode and the upper electrode with a lower pattern factor is thickened to balance a metal volume of the lower electrode with a metal volume of the upper electrode.2. The MEMS structure of claim 1 , wherein the upper electrode is deposited within tapered vias of the at least one insulator layer.3. The MEMS structure of claim 1 , wherein the lower electrode and the upper electrode are formed of a same material.4. The MEMS structure of claim 3 , wherein the lower electrode and the upper electrode are composed of Ti/AlCu/Ti/TiN.5. The MEMS structure of claim 4 , wherein a coefficient of thermal expansion (CTE) of the lower electrode and the upper electrode is approximated by AlCu.6. The MEMS structure of claim 1 , wherein one of the lower electrode and the upper electrode is a slotted or holed layout and one of the upper electrode and the lower electrode claim 1 , respectively claim 1 , has a thickness of the slotted or holed layout claim 1 , to match the metal volume of the lower electrode with the metal volume of the upper electrode.7. The MEMS structure of claim 1 , wherein a pattern factor ratio of the lower electrode to the upper electrode comprises 0.8:1.8. ...

PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending. 1. A Micro-Electro-Mechanical System (MEMS) structure comprising:a moveable beam comprising at least one insulator layer on a lower electrode; andan upper electrode over the at least one insulator layer,wherein the lower electrode has a slotted layout to match a metal volume of the lower electrode with a metal volume of the upper electrode.2. The MEMS structure of claim 1 , wherein the metal volume of the lower electrode and the metal volume of the upper electrode are based at least on a layout of the upper electrode.3. The MEMS structure of claim 2 , wherein the lower electrode and the upper electrode are formed of a same material.4. The MEMS structure of claim 2 , wherein the lower electrode and the upper electrode have identical layouts and same thicknesses.5. The MEMS structure of claim 1 , wherein the moveable beam is formed from one or more metal layers claim 1 , comprising a top metal and a bottom metal with an oxide layer therebetween.6. The MEMS structure of claim 1 , wherein the lower electrode is in a trench.7. The MEMS structure of claim 1 , wherein the lower electrode and the upper electrode are composed of Ti/AlCu/Ti/TiN.8. The MEMS structure of claim 1 , wherein the upper electrode is U-shaped with a via between opposing sides of the upper electrode.9. The MEMS structure of claim 1 , wherein the lower electrode and the upper electrode are asymmetric relative to one another.10. The MEMS structure of claim 1 , wherein the upper electrode is thinned compared to the ...

Planar cavity mems and related structures, methods of manufacture and design structures

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

SENSOR, MICROPHONE, BLOOD PRESSURE SENSOR, AND TOUCH PANEL

According to one embodiment, a sensor includes a structure body including a deforming portion, and a first sensing element provided at the deforming portion. The first sensing element includes first to fourth magnetic layers and a first intermediate layer. The first magnetic layer is provided between the second and third magnetic layers. The fourth magnetic layer is provided between the first and third magnetic layers. The first intermediate layer is provided between the second and first magnetic layers. The third magnetic layer includes at least one of a first material or a second material. The first material includes at least one selected from the group consisting of Ir—Mn, Pt—Mn, Pd—Pt—Mn, and Ru—Rh—Mn. The second material includes at least one of CoPt, (CoPt)Cr, or FePt. A crystallinity of at least a portion of the fourth magnetic layer is higher than a crystallinity of the first magnetic layer. 1. A sensor , comprising:a structure body including a deforming portion, the deforming portion being deformable; anda first sensing element provided at the deforming portion,the first sensing element including first to fourth magnetic layers and a first intermediate layer,the first magnetic layer being provided between the second magnetic layer and the third magnetic layer,the fourth magnetic layer being provided between the first magnetic layer and the third magnetic layer,the first intermediate layer being provided between the second magnetic layer and the first magnetic layer,{'sub': x', '100-x', '100-y', 'y, 'the third magnetic layer including at least one of a first material or a second material, the first material including at least one selected from the group consisting of Ir—Mn, Pt—Mn, Pd—Pt—Mn, and Ru—Rh—Mn, the second material including at least one of CoPt (a ratio of Co being not less than 50 at. % and not more than 85 at. %), (CoPt)Cr(x being not less than 50 at. % and not more than 85 at. %, and y being not less than 0 at. % and not more than 40 at. %), or ...

Adjustable Ventilation Openings in MEMS Structures

A MEMS structure and a method for operation a MEMS structure are disclosed. In accordance with an embodiment of the present invention, a MEMS structure comprises a substrate, a backplate, and a membrane comprising a first region and a second region, wherein the first region is configured to sense a signal and the second region is configured to adjust a threshold frequency from a first value to a second value, and wherein the backplate and the membrane are mechanically connected to the substrate. 1. A MEMS structure comprising:a substrate;a backplate; anda membrane comprising an adjustable ventilation opening,wherein the backplate and the membrane are mechanically connected to the substrate.2. The MEMS structure according to claim 1 , wherein the membrane comprises a central region and an outer region claim 1 , the out region encompassing the central region claim 1 , and wherein the adjustable ventilation opening is located in the outer region.3. The MEMS structure according to claim 1 , wherein the backplate is a structured backplate having a first electrode and a second electrode claim 1 , and wherein the adjustable ventilation opening corresponds to the second electrode but not to the first electrode.4. The MEMS structure according to claim 1 , wherein the adjustable ventilation opening is configured to move toward the substrate if actuated.5. The MEMS structure according to claim 1 , wherein the adjustable ventilation opening is configured to move toward the backplate if actuated.6. The MEMS structure according to claim 1 , wherein the adjustable ventilation opening comprises a cantilever claim 1 , and wherein the cantilever is without ventilation openings.7. The MEMS structure according to claim 1 , wherein the adjustable ventilation opening comprises a cantilever claim 1 , and wherein the cantilever comprises ventilation openings.8. The MEMS structure according to claim 1 , wherein the adjustable ventilation opening comprises a plurality of adjustable ...

Microfabricated ultrasonic transducer having individual cells with electrically isolated electrode sections

An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another.

Mems device and method for forming the same

A MEMS device includes a first layer and a second layer including a same material, a third layer disposed between the first layer and the second layer, a first air gap separating the first layer and the third layer, a second air gap separating the second layer and the third layer, a plurality of first pillars exposed to the first air gap and arranged in contact with the first layer and the third layer, a plurality of second pillars exposed to the second air gap and arranged in contact with the second layer and the third layer.

MEMS ACTUATION SYSTEMS AND METHODS

A micro-electrical-mechanical system (MEMS) actuator includes a first set of actuation fingers, a second set of actuation fingers, and a first spanning structure configured to couple at least two fingers of the first set of actuation fingers while spanning at least one finger of the second set of actuation fingers. 1. A micro-electrical-mechanical system (MEMS) actuator comprising:a first set of actuation fingers;a second set of actuation fingers; anda first spanning structure configured to couple at least two fingers of the first set of actuation fingers while spanning at least one finger of the second set of actuation fingers.2. The micro-electrical-mechanical system (MEMS) actuator of wherein the first spanning structure is configured to span the at least one finger of the second set of actuation fingers at a distance configured to define a maximum level of first-axis/first-direction deflection for the at least one finger of the second set of actuation fingers.3. The micro-electrical-mechanical system (MEMS) actuator of wherein the first spanning structure is configured to define a first gap between the first spanning structure and the at least one finger of the second set of actuation fingers claim 2 , wherein this first gap is in the range of 0.1 μm and 5 μm.4. The micro-electrical-mechanical system (MEMS) actuator of further comprising:a second spanning structure configured to couple at least two fingers of the second set of actuation fingers while spanning at least one finger of the first set of actuation fingers.5. The micro-electrical-mechanical system (MEMS) actuator of wherein the second spanning structure is configured to span the at least one finger of the first set of actuation fingers at a distance configured to define a maximum level of first-axis/second-direction deflection for the at least two fingers of the second set of actuation fingers.6. The micro-electrical-mechanical system (MEMS) actuator of wherein the first spanning structure is ...