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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 12942. Отображено 100.
12-01-2012 дата публикации

Guided self-assembly of block copolymer line structures for integrated circuit interconnects

Номер: US20120009390A1
Принадлежит: Massachusetts Institute of Technology

Complex self-assembled patterns can be created using a sparse template and local changes to the shape or distribution of the posts of the template to direct pattern generation of block copolymer. The post spacing in the template is formed commensurate with the equilibrium periodicity of the block copolymer, which controls the orientation of the linear features. Further, the posts can be arranged such that the template occupies only a few percent of the area of the final self-assembled patterns. Local aperiodic features can be introduced by changing the period or motif of the lattice or by adding guiding posts. According to one embodiment, an array of carefully spaced and shaped posts, prepared by electron-beam patterning of an inorganic resist, can be used to template complex patterns in a cylindrical-morphology block copolymer. These complex self-assembled patterns can form a mask used in fabrication processes of arbitrary structures such as interconnect layouts.

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26-01-2012 дата публикации

Process for manufacturing a micromechanical structure having a buried area provided with a filter

Номер: US20120018819A1
Принадлежит: STMICROELECTRONICS SRL

A process for manufacturing a micromechanical structure envisages: forming a buried cavity within a body of semiconductor material, separated from a top surface of the body by a first surface layer; and forming an access duct for fluid communication between the buried cavity and an external environment. The method envisages: forming an etching mask on the top surface at a first access area; forming a second surface layer on the top surface and on the etching mask; carrying out an etch such as to remove, in a position corresponding to the first access area, a portion of the second surface layer, and an underlying portion of the first surface layer not covered by the etching mask until the buried cavity is reached, thus forming both the first access duct and a filter element, set between the first access duct and the same buried cavity.

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26-01-2012 дата публикации

Bonded Microelectromechanical Assemblies

Номер: US20120019598A1
Принадлежит: Fujifilm Dimatix Inc

A MEMS device is described that has a body with a component bonded to the body. The body has a main surface and a side surface adjacent to the main surface and smaller than the main surface. The body is formed of a material and the side surface is formed of the material and the body is in a crystalline structure different from the side surface. The body includes an outlet in the side surface and the component includes an aperture in fluid connection with the outlet.

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23-02-2012 дата публикации

Methods Of Forming Patterns, And Methods Of Forming Integrated Circuits

Номер: US20120045891A1
Автор: Dan Millward, Scott Sills
Принадлежит: Micron Technology Inc

Some embodiments include methods of forming patterns in substrates by utilizing block copolymer assemblies as patterning materials. A block copolymer assembly may be formed over a substrate, with the assembly having first and second subunits arranged in a pattern of two or more domains. Metal may be selectively coupled to the first subunits relative to the second subunits to form a pattern of metal-containing regions and non-metal-containing regions. At least some of the block copolymer may be removed to form a patterned mask corresponding to the metal-containing regions. A pattern defined by the patterned mask may be transferred into the substrate with one or more etches. In some embodiments, the patterning may be utilized to form integrated circuitry, such as, for example, gatelines.

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08-03-2012 дата публикации

MEMS Sensor Package

Номер: US20120056280A1
Принадлежит: Individual

A MEMS sensor package includes a support and a MEMS sensor chip having a mounting side adhered on the support by a point-shaped adhesive or a linear-shaped adhesive in such a way that the MEMS sensor chip has a free side opposite to the mounting and suspended above the support. Because the MEMS sensor chip has the free side that is not restrained on the support, the stress due to deformation of the support will not affect the accuracy of the MEMS sensor chip.

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22-03-2012 дата публикации

Substrate bonding with metal germanium silicon material

Номер: US20120068325A1
Принадлежит: FREESCALE SEMICONDUCTOR INC

In one embodiment, a semiconductor structure including a first substrate, a semiconductor device on the first substrate, a second substrate, and a conductive bond between the first substrate and the second substrate that surrounds the semiconductor device to seal the semiconductor device between the first substrate and the second substrate. The conductive bond comprises metal, silicon, and germanium. A percentage by atomic weight of silicon in the conductive bond is greater than 5%.

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29-03-2012 дата публикации

Bond ring for a first and second substrate

Номер: US20120074554A1

The present disclosure provides a device having a plurality of bonded substrates. The substrates are bonded by a first bond ring and a second bond ring. In an embodiment, the first bond ring is a eutectic bond and the second bond ring is at least one of an organic material and a eutectic bond. The second bond ring encircles the first bond ring. The first bond ring provides a hermetic region of the device. In a further embodiment, a plurality of wafers are bonded which include a third bond ring disposed at the periphery of the wafers.

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12-04-2012 дата публикации

Package systems and manufacturing methods thereof

Номер: US20120086126A1

A package system includes a first substrate and a second substrate. The second substrate is electrically coupled with the first substrate. The second substrate includes at least one first opening. At least one electrical bonding material is disposed between the first substrate and the second substrate. A first portion of the at least one electrical bonding material is at least partially filled in the at least one first opening.

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12-04-2012 дата публикации

Package systems and manufacturing methods thereof

Номер: US20120086127A1

A package system includes a first substrate. A second substrate is electrically coupled with the first substrate. At least one electrical bonding material is disposed between the first substrate and the second substrate. The at least one electrical bonding material includes a eutectic bonding material. The eutectic bonding material includes a metallic material and a semiconductor material. The metallic material is disposed adjacent to a surface of the first substrate. The metallic material includes a first pad and at least one first guard ring around the first pad.

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03-05-2012 дата публикации

Channel and method of forming channels

Номер: US20120107194A1
Принадлежит: CORNELL UNIVERSITY

A device is made by forming sacrificial fibers on a substrate mold. The fibers and mold are covered with a first material. The substrate mold is removed, and the covered fibers are then removed to form channels in the first material.

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10-05-2012 дата публикации

Disposable Bond Gap Control Structures

Номер: US20120111492A1
Автор: Buu Diep, Roland W. Gooch
Принадлежит: Raytheon Co

In certain embodiments, a bond gap control structure (BGCS) is placed outwardly from a substrate. The BGCS is configured to control a geometry of a bond line of a joining material. The joining material is deposited outwardly from the substrate. The substrate is bonded to another substrate with the joining material. The BGCS is at least partially removed from the substrate.

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24-05-2012 дата публикации

Systems and methods for a four-layer chip-scale mems device

Номер: US20120126348A1
Автор: Robert D. Horning
Принадлежит: Honeywell International Inc

Systems and methods for a micro-electromechanical system (MEMS) apparatus are provided. In one embodiment, a system comprises a first double chip that includes a first base layer; a first device layer bonded to the first base layer, the first device layer comprising a first set of MEMS devices; and a first top layer bonded to the first device layer, wherein the first set of MEMS devices is hermetically isolated. The system also comprises a second double chip that includes a second base layer; a second device layer bonded to the second base layer, the second device layer comprising a second set of MEMS devices; and a second top layer bonded to the second device layer, wherein the second set of MEMS devices is hermetically isolated, wherein a first top surface of the first top layer is bonded to a second top surface of the second top layer.

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24-05-2012 дата публикации

Pattern forming method

Номер: US20120127454A1
Принадлежит: Individual

According to one embodiment, a pattern including first and second block phases is formed by self-assembling a block copolymer onto a film to be processed. The entire block copolymer present in a first region is removed under a first condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in a region other than the first region. The first block phase present in a second region is selectively removed under a second condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in an overlap region between a region other than the first region and a region other than the second region, and leaving a pattern of second block phase in the second region excluding the overlap region. The film is etched with the left patterns as masks.

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24-05-2012 дата публикации

Method and system for packaging a display

Номер: US20120127556A1
Принадлежит: Qualcomm Mems Technologies Inc

A package structure and method of packaging for an interferometric modulator. A transparent substrate having an interferometric modulator formed thereon is provided. A backplane is joined to the transparent substrate with a seal where the interferometric modulator is exposed to the surrounding environment through an opening in either the backplane or the seal. The opening is sealed after the transparent substrate and backplane are joined and after any desired desiccant, release material, and/or self-aligning monolayer is introduced into the package structure.

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31-05-2012 дата публикации

Micromechanical component

Номер: US20120133003A1
Автор: Jochen Reinmuth
Принадлежит: ROBERT BOSCH GMBH

A micromechanical component includes: a substrate having a multitude of trench structures which separate a first and a second mass element of the substrate from a web element of the substrate, in such a way that the first and second mass elements enclose the web element along an extension direction of the main surface of the substrate and are disposed to allow movement relative to the substrate in the direction of a surface normal of the main surface; a first electrode layer applied on the main surface of the substrate and forms a first electrode on the web element between the first and second mass elements; and a second electrode layer applied on the first and second mass elements and forming a self-supporting second electrode above the first electrode in the area of the web element, the first and second electrode forming a capacitance.

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31-05-2012 дата публикации

Self-assembly of lithographically patterned polyhedral nanostructures and formation of curving nanostructures

Номер: US20120135237A1
Принадлежит: JOHNS HOPKINS UNIVERSITY

The self-assembly of polyhedral nanostructures having at least one dimension of about 100 nm to about 900 nm with electron-beam lithographically patterned surfaces is provided. The presently disclosed three-dimensional nanostructures spontaneous assemble from two-dimensional, tethered panels during plasma or wet chemical etching of the underlying silicon substrate. Any desired surface pattern with a width as small as fifteen nanometers can be precisely defined in all three dimensions. The formation of curving, continuous nanostructures using extrinsic stress also is disclosed.

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07-06-2012 дата публикации

Mems switches and fabrication methods

Номер: US20120138436A1
Принадлежит: International Business Machines Corp

MEMS switches and methods of fabricating MEMS switches. The switch has a vertically oriented deflection electrode having a conductive layer supported by a supporting layer, at least one drive electrode, and a stationary electrode. An actuation voltage applied to the drive electrode causes the deflection electrode to be deflect laterally and contact the stationary electrode, which closes the switch. The deflection electrode is restored to a vertical position when the actuation voltage is removed, thereby opening the switch. The method of fabricating the MEMS switch includes depositing a conductive layer on mandrels to define vertical electrodes and then releasing the deflection electrode by removing the mandrel and layer end sections.

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07-06-2012 дата публикации

Resin bonding method by photoirradiation, method for producing resin article, resin article produced by the same method, method for producing microchip, and microchip produced by the same method

Номер: US20120140335A1
Принадлежит: Alps Electric Co Ltd

A resin bonding method according to the present invention is a resin bonding method for bonding a first resin and a second resin including (I) a step of irradiating spaces containing oxygen molecules with vacuum ultraviolet light having a wavelength of 175 nm or less, the spaces being in contact with surfaces of the first and second resins; and (II) a step of, after the irradiation, subjecting the surfaces to temperature rise while the surfaces are in contact with each other, to bond the first resin and the second resin together with the surfaces serving as bonding surfaces. In the step (I), the surfaces of the first and second resins may be further irradiated with the vacuum ultraviolet light. In this case, a light amount of the vacuum ultraviolet light having reached the surfaces is preferably, for example, 0.1 J/cm 2 or more and 10 J/cm 2 or less.

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14-06-2012 дата публикации

Method to prevent metal pad damage in wafer level package

Номер: US20120149152A1

The present disclosure provide a method of manufacturing a microelectronic device. The method includes forming a bonding pad on a first substrate; forming wiring pads on the first substrate; forming a protection material layer on the first substrate, on sidewalls and top surfaces of the wiring pads, and on sidewalls of the bonding pad, such that a top surface of the bonding pad is at least partially exposed; bonding the first substrate to a second substrate through the bonding pad; opening the second substrate to expose the wiring pads; and removing the protection material layer.

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21-06-2012 дата публикации

Forming nanometer-sized patterns by electron microscopy

Номер: US20120152902A1

A method for forming nanometer-sized patterns and pores in a membrane is described. The method comprises incorporating a reactive material onto the membrane, the reactive material being a material capable of lowering an amount of energy required for forming a pore and/or pattern by irradiating the membrane material with an electron beam, thus leading to a faster pore and/or pattern formation.

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19-07-2012 дата публикации

Method for mems device fabrication and device formed

Номер: US20120181638A1
Принадлежит: Cavendish Kinetics Inc

The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.

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26-07-2012 дата публикации

Methods for self-aligned self-assembled patterning enhancement

Номер: US20120190205A1
Принадлежит: International Business Machines Corp

Methods for producing self-aligned, self-assembled sub-ground-rule features without the need to use additional lithographic patterning. Specifically, the present disclosure allows for the creation of assist features that are localized and self-aligned to a given structure. These assist features can either have the same tone or different tone to the given feature.

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02-08-2012 дата публикации

Method and apparatus for etching the silicon oxide layer of a semiconductor substrate

Номер: US20120196445A1
Автор: Kwon-Taek Lim
Принадлежит: Pukyong National University

An aspect of the invention is to provide a method and apparatus for etching the silicon oxide layer of a semiconductor substrate, whereby the processing time for cleaning or rinsing, as well as any undesired aftereffects by residual hydrofluoric acid, may be reduced, in using the dry etching method involving the use of dense carbon dioxide that contains hydrofluoric acid, during the manufacturing process of a micro-electronic device.

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16-08-2012 дата публикации

MEMS and Protection Structure Thereof

Номер: US20120205808A1
Принадлежит: United Microelectronics Corp

A protection structure of a pad is provided. The pad is disposed in a dielectric layer on a semiconductor substrate and the pad includes a connection region and a peripheral region which encompasses the connection region. The protection structure includes at least a barrier, an insulation layer and a mask layer. The barrier is disposed in the dielectric layer in the peripheral region. The insulation layer is disposed on the dielectric layer. The mask layer is disposed on the dielectric layer and covers the insulation layer and the mask layer includes an opening to expose the connection region of the pad.

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23-08-2012 дата публикации

Method of producing nanopatterned articles, and articles produced thereby

Номер: US20120211871A1
Принадлежит: Individual

A nanopatterned surface is prepared by forming a block copolymer film on a miscut crystalline substrate, annealing the block copolymer film, then reconstructing the surface of the annealed block copolymer film The method creates a well-ordered array of voids in the block copolymer film that is maintained over a large area. The nanopatterned block copolymer films can be used in a variety of different applications, including the fabrication of high density data storage media.

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30-08-2012 дата публикации

Polyhedral oligomeric silsesquioxane compositions, methods of using these compositions, and structures including these compositions

Номер: US20120219793A1
Принадлежит: Georgia Tech Research Corp

Embodiments of the present disclosure include functionalized polyhedral oligomeric silsesquioxane compositions or mixtures, methods of using functionalized polyhedral oligomeric silsesquioxane compositions, structures including functionalized polyhedral oligomeric silsesquioxane, and the like.

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06-09-2012 дата публикации

Method for producing an integrated device

Номер: US20120222294A1
Принадлежит: International Business Machines Corp

An article for producing an integrated device includes a deformable layer and one or more components releasably attached on one surface of the deformable layer.

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20-09-2012 дата публикации

Method for Electrochemical Fabrication

Номер: US20120234688A1
Автор: Adam L. Cohen
Принадлежит: University of Southern California USC

An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed.

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25-10-2012 дата публикации

Method for disposing a component

Номер: US20120269971A1
Автор: Hidekazu Arase
Принадлежит: Panasonic Corp

Provided is a method for disposing a component on a substrate ( 100 ), the method comprising steps of: a step (a) of preparing the substrate ( 100 ), a first liquid, and a component-dispersing liquid; a step (b) of applying the first liquid to the substrate ( 100 ) along the +X direction continuously to dispose the first liquid on hydrophilic lines ( 112 ) and hydrophilic body regions ( 111 ) along the +X direction alternately; a step (c) of bringing the component-dispersing liquid in contact with the first liquid disposed on the hydrophilic region ( 111 ); and a step (d) of removing the first liquid and the second liquid from the substrate ( 100 ) to dispose the component on the hydrophilic region ( 111 ).

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25-10-2012 дата публикации

Low temperature bi-cmos compatible process for mems rf resonators and filters

Номер: US20120270351A1
Принадлежит: International Business Machines Corp

A method of removal of a first and second sacrificial layer wherein an O 2 plasma or an O 2 -containing environment is introduced to a cavity and a gap region through a plurality of via holes in a cavity capping material.

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01-11-2012 дата публикации

Self-assembly of block copolymers on topographically patterned polymeric substrates

Номер: US20120276346A1
Принадлежит: Individual

Highly-ordered block copolymer films are prepared by a method that includes forming a polymeric replica of a topographically patterned crystalline surface, forming a block copolymer film on the topographically patterned surface of the polymeric replica, and annealing the block copolymer film. The resulting structures can be used in a variety of different applications, including the fabrication of high density data storage media. The ability to use flexible polymers to form the polymeric replica facilitates industrial-scale processes utilizing the highly-ordered block copolymer films.

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15-11-2012 дата публикации

Processes and mounting fixtures for fabricating electromechanical devices and devices formed therewith

Номер: US20120286380A1
Принадлежит: EVIGIA SYSTEMS

Processes and fixtures for producing electromechanical devices, and particularly three-dimensional electromechanical devices such as inertial measurement units (IMUs), through the use of a fabrication process and a three-dimensional assembly process that entail joining single-axis device-IC chips while positioned within a mounting fixture that maintains the orientations and relative positions of the chips during the joining operation.

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22-11-2012 дата публикации

Nonvolatile nano-electromechanical system device

Номер: US20120293236A1
Автор: David J. Frank, Guy Cohen
Принадлежит: International Business Machines Corp

A nonvolatile nano-electromechanical system device is provided and includes a cantilever structure, including a beam having an initial shape, which is supported at one end thereof by a supporting base and a beam deflector, including a phase change material (PCM), disposed on a portion of the beam in a non-slip condition with a material of the beam, the PCM taking one of an amorphous phase or a crystalline phase and deflecting the beam from the initial shape when taking the crystalline phase.

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13-12-2012 дата публикации

Method of preventing stiction of mems devices

Номер: US20120313189A1
Принадлежит: InvenSense Inc

A method and apparatus are disclosed for reducing stiction in MEMS devices. The method comprises patterning a CMOS wafer to expose Titanium-Nitride (TiN) surface for a MEMS stop and patterning the TiN to form a plurality of stop pads on the top metal aluminum surface of the CMOS wafer. The method is applied for a moveable MEMS structure bonded to a CMOS wafer. The TiN surface and/or plurality of stop pads minimize stiction between the MEMS structure and the CMOS wafer. Further, the TiN film on top of aluminum electrode suppresses the formation of aluminum hillocks which effects the MEMS structure movement.

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13-12-2012 дата публикации

Semiconductor apparatus

Номер: US20120313246A1

The disclosure relates to integrated circuit fabrication, and more particularly to a semiconductor apparatus with a metallic alloy. An exemplary structure for an apparatus comprises a first silicon substrate; a second silicon substrate; and a contact connecting each of the first and second substrates, wherein the contact comprises a Ge layer adjacent to the first silicon substrate, a Cu layer adjacent to the second silicon substrate, and a metallic alloy between the Ge layer and Cu layer.

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27-12-2012 дата публикации

Microfabricated elastomeric valve and pump systems

Номер: US20120328834A1

A method of fabricating an elastomeric structure, comprising: forming a first elastomeric layer on top of a first micromachined mold, the first micromachined mold having a first raised protrusion which forms a first recess extending along a bottom surface of the first elastomeric layer; forming a second elastomeric layer on top of a second micromachined mold, the second micromachined mold having a second raised protrusion which forms a second recess extending along a bottom surface of the second elastomeric layer; bonding the bottom surface of the second elastomeric layer onto a top surface of the first elastomeric layer such that a control channel forms in the second recess between the first and second elastomeric layers; and positioning the first elastomeric layer on top of a planar substrate such that a flow channel forms in the first recess between the first elastomeric layer and the planar substrate.

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03-01-2013 дата публикации

Manufacturing method for a micromechanical component, corresponding composite component, and corresponding micromechanical component

Номер: US20130001711A1
Принадлежит: Individual

A micromechanical component including a first composite of a plurality of semiconductor chips, the first composite having a first front and back surfaces, a second composite of a corresponding plurality of carrier substrates, the second composite having a second front and back surfaces; wherein the first front surface and the second front surface are connected via a structured adhesion promoter layer in such a way that each semiconductor chip is connected, essentially free of cavities, to a corresponding carrier substrate corresponding to a respective micromechanical component.

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10-01-2013 дата публикации

Alignment methods in fluid-filled mems displays

Номер: US20130010341A1
Принадлежит: Pixtronix Inc

This application relates to a display including a first layer of material including a first aperture having at least one side, a first substrate separated from the first layer of material by a gap, where the first substrate is arranged to pass through a portion of light emitted from a light source into the gap. The display further includes a movable shutter arranged within the gap, where the shutter is movable to at least a first position and a second position, to obstruct passage of the portion of light through the first aperture at the first position. The movable shutter has a first edge, and in the first position, the movable shutter is aligned with the first aperture such that the first edge extends a first length past the at least one side of the first aperture.

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10-01-2013 дата публикации

Multilayer antireflection coatings, structures and devices including the same and methods of making the same

Номер: US20130011561A1
Принадлежит: Micron Technology Inc

Multi-layer antireflection coatings, devices including multi-layer antireflection coatings and methods of forming the same are disclosed. A block copolymer is applied to a substrate and self-assembled into parallel lamellae above a substrate. The block copolymer may optionally be allowed to self-assemble into a multitude of domains oriented either substantially parallel or substantially perpendicular to an underlying substrate.

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24-01-2013 дата публикации

Block copolymer for manufacturing nanowire and method for manufacturing thereof

Номер: US20130020278A1
Принадлежит: UNIST Academy Industry Research Corp

A block copolymer for manufacturing a nanowire and a method of manufacturing the same are disclosed. The block copolymer and the method of manufacturing a nanowire using the same are used to fabricate a nanowire having a diameter of less than or equal to 30 nm and a porous nanowire having a diameter within the same range and pores with a diameter of less than or equal to 10 nm.

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31-01-2013 дата публикации

Lid, fabricating method thereof, and mems package made thereby

Номер: US20130028450A1

A lid for a MEMS device and the relative manufacturing method. The lid includes: a first board with opposite first and second surfaces having first and second metal layers disposed thereon, respectively, wherein a through cavity extends through the first board and the first and second metal layers; a second board with opposite third and fourth surfaces; an adhesive layer sandwiched between the second surface of the first board and the third surface of the second board to couple the first and second boards together such that the through cavity is closed by the second board, thereby forming a recess; and a first conductor layer coating the bottom and the side surfaces of the recess.

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31-01-2013 дата публикации

Method for making a reinforced silicon micromechanical part

Номер: US20130029157A1
Автор: Nakis Karapatis
Принадлежит: Montres Breguet SA

A method of fabricating a reinforced silicon micromechanical part includes: micromachining the part, or a batch of parts in a silicon wafer; forming a silicon dioxide layer over the entire surface of the part, in one or plural operations, so as to obtain a thickness of silicon dioxide that is at least five times greater than the thickness of native silicon dioxide; and removing the silicon dioxide layer by etching.

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31-01-2013 дата публикации

Free form printing of silicon micro- and nanostructures

Номер: US20130029480A1
Принадлежит: Individual

A method of making a three-dimensional structure in semiconductor material includes providing a substrate ( 20 ) is provided having at least a surface including semiconductor material. Selected areas of the surface of the substrate are exposed to a focussed ion beam whereby the ions are implanted in the semiconductor material in the selected areas. Several layers of a material selected from the group consisting of mono-crystalline, poly-crystalline or amorphous semiconductor material, are deposited on the substrate surface and between depositions focussed ion beam is used to expose the surface so as to define a three-dimensional structure. Material not part of the final structure ( 30 ) defined by the focussed ion beam is etched away so as to provide a three-dimensional structure on the substrate ( 20 ).

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07-02-2013 дата публикации

Metal thin shield on electrical device

Номер: US20130032385A1
Принадлежит: Qualcomm Mems Technologies Inc

This disclosure provides systems and methods for forming a metal thin film shield over a thin film cap to protect electromechanical systems devices in a cavity beneath. In one aspect, a dual or multi layer thin film structure is used to seal a electromechanical device. For example, a metal thin film shield can be mated over an oxide thin film cap to encapsulate the electromechanical device and prevent degradation due to wafer thinning, dicing and package assembly induced stresses, thereby strengthening the survivability of the electromechanical device in the encapsulated cavity. During redistribution layer processing, a metal thin film shield, such as a copper layer, is formed over the wafer surface, patterned and metalized.

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28-02-2013 дата публикации

Glass as a substrate material and a final package for mems and ic devices

Номер: US20130050227A1
Принадлежит: Qualcomm Mems Technologies Inc

This disclosure provides systems, methods and apparatus for glass packaging of integrated circuit (IC) and electromechanical systems (EMS) devices. In one aspect, a glass package may include a glass substrate, a cover glass and one or more devices encapsulated between the glass substrate and the cover glass. The cover glass may be bonded to the glass substrate with an adhesive such as an epoxy, or a metal bond ring. The glass package also may include one or more signal transmission pathways between the one or more devices and the package exterior. In some implementations, a glass package including an EMS and/or IC device is configured to be directly attached to a printed circuit board (PCB) or other integration substrate by surface mount technology.

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07-03-2013 дата публикации

Integrated circuit and method for fabricating the same

Номер: US20130056858A1
Принадлежит: United Microelectronics Corp

A method for fabricating integrated circuit is provided. First, a substrate having a micro electromechanical system (MEMS) region is provided. A first interconnect structure and a hard mask layer have been disposed on the MEMS region in sequence. Next, an anisotropic etching process is performed by using the hard mask layer as a photo mask to etch a portion of the first interconnect structure exposed by the hard mask layer. Accordingly, a MEMS structure is formed. A portion of the substrate in MEMS region is exposed by the MEMS structure. Then, an isotropic etching process is performed for removing the portion of the substrate in MEMS region to form a cavity with a center region and a ring-like indentation region. The center region is surrounded by the ring-like indentation region and the MEMS structure suspends above the cavity. An integrated circuit is also provided.

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11-04-2013 дата публикации

Micro-electromechanical semiconductor component

Номер: US20130087865A1
Автор: Arnd Ten Have
Принадлежит: ELMOS SEMICONDUCTOR SE

The micro-electromechanical semiconductor component is provided with a semiconductor substrate in which a cavity is formed, which is delimited by lateral walls and by a top and a bottom wall. In order to form a flexible connection to the region of the semiconductor substrate, the top or bottom wall is provided with trenches around the cavity, and bending webs are formed between said trenches. At least one measuring element that is sensitive to mechanical stresses is formed within at least one of said bending webs. Within the central region surrounded by the trenches, the top or bottom wall comprises a plurality of depressions reducing the mass of the central region and a plurality of stiffening braces separating the depressions.

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25-04-2013 дата публикации

Method for Making Micro-Electro-Mechanical System Device

Номер: US20130102100A1
Принадлежит: PixArt Imaging Inc

The present invention discloses a method for making a MEMS device, comprising: providing a zero-layer substrate; forming a MEMS device region on the substrate, wherein the MEMS device region is provided with a first sacrificial region to separate a suspension structure of the MEMS device from another part of the MEMS device; removing the first sacrificial region by etching; and micromachining the zero-layer substrate.

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02-05-2013 дата публикации

Semiconductor structure

Номер: US20130105920A1
Принадлежит: International Business Machines Corp

Micro-Electro-Mechanical System (MEMS) structures, metrology structures and methods of manufacture are disclosed. The method includes forming one or metrology structure, during formation of a device in a chip area. The method further includes venting the one or more metrology structure after formation of the device.

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16-05-2013 дата публикации

Polymeric substrate having an etched-glass-like surface and a microfluidic chip made of said polymeric substrate

Номер: US20130121892A1
Принадлежит: Sony Corp, SONY DADC AUSTRIA AG

The present invention relates to a polymeric substrate having a glass-like surface, in particular an etched-glass-like surface and to a chip made of at least one such polymeric substrate. The present invention also relates to a method of providing a polymeric substrate with an etched-glass-like surface. Moreover, the present invention relates to a kit for manufacturing a chip using such polymeric substrate. Moreover, the present invention relates to the use of a polymeric substrate having a glass-like surface, in particular an etched-glass-like surface for manufacturing a chip.

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23-05-2013 дата публикации

Air cavity package configured to electrically couple to a printed circuit board and method of providing same

Номер: US20130128487A1
Принадлежит: UBOTIC INTELLECTUAL PROPERTY CO Ltd

In some examples, a semiconductor package can be configured to electrically couple to a printed circuit board. The semiconductor package can include: (a) a lid having one or more first electrically conductive leads; (b) a base having a top, a bottom and one or more sides between the top and the bottom, the base having one or more second electrically conductive leads electrically coupled to the one or more first electrically conductive leads; (c) one or more first semiconductor devices mechanically coupled to the lid and electrically coupled to the one or more first electrically conductive leads; and (d) one or more first micro-electrical-mechanical system devices mechanically coupled to the lid and electrically coupled to the one or more first electrically conductive leads. The lid can be coupled to the base and at least one of the lid or the base has at least one port hole. The one or more second electrically conductive leads can be configured to couple to the printed circuit board at a first side of the one or more sides of the base. Other embodiments are disclosed.

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20-06-2013 дата публикации

Method for Wafer-Level Surface Micromachining to Reduce Stiction

Номер: US20130157005A1
Автор: Fang Liu, Kuang Yang
Принадлежит: Analog Devices Inc

An array of microbumps with a layer or coating of non-superhydrophobic material yields a superhydrophobic surface, and may also have a contact angle hysteresis of 15 degrees or less. A surface with such an array may therefore be rendered superhydrophobic even though the surface structure and materials are not, by themselves, superhydrophobic.

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04-07-2013 дата публикации

Nano-structure and method of making the same

Номер: US20130168253A1
Принадлежит: Hewlett Packard Development Co LP

A nano-structure ( 100, 100 ′) includes an oxidized layer ( 14 ′), and at least two sets ( 24, 24 ′) of super nano-pillars ( 20 ) positioned on the oxidized layer ( 14 ′). Each of the at least two sets ( 24, 24 ′) of super nano-pillars ( 20 ) includes a plurality of super nano-pillars ( 20 ), where each set ( 24, 24 ′) is separated a spaced distance from each other set ( 24, 24 ′).

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25-07-2013 дата публикации

Micro-Electro-Mechanical System Device, Out-of-Plane Sensor and Method for Making Micro-Electro-Mechanical System Device

Номер: US20130186201A1
Принадлежит: PixArt Imaging Inc

The present invention discloses a micro-electro-mechanical system (MEMS) device, comprising: a mass including a main body and two capacitor plates located at the two sides of the main body and connected with the main body, the two capacitor plates being at different elevation levels; an upper electrode located above one of the two capacitor plates, forming one capacitor therewith; and a lower electrode located below the other of the two capacitor plates, forming another capacitor therewith, wherein the upper and lower electrodes are misaligned with each other in a horizontal direction.

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25-07-2013 дата публикации

Directed assembly of block copolymer films between a chemically patterned surface and a second surface

Номер: US20130189504A1
Принадлежит: WISCONSIN ALUMNI RESEARCH FOUNDATION

Provided are methods of fabricating thin film structures that involve assembling block copolymer materials in the presence of condensed phase surfaces on both sides of the thin film, at least one of which is a chemically patterned surface configured to direct the assembly of the block copolymer material. According to various embodiments, the other of the condensed phase surfaces can be a chemically homogenous surface or a chemically patterned surface. Also provided are structures, morphologies, and templates formed in the domain structure of block copolymer materials. In certain embodiments, complex 3-D morphologies and related structures not present in bulk block copolymer materials are provided.

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08-08-2013 дата публикации

Capped integrated device with protective cap, composite wafer incorporating integrated devices and process for bonding integrated devices with respective protective caps

Номер: US20130203235A1
Принадлежит: STMICROELECTRONICS SRL

A capped integrated device includes a semiconductor chip, incorporating an integrated device and a protective cap, bonded to the semiconductor chip for protection of the integrated device by means of a bonding layer made of a bonding material. The bonding material forms anchorage elements within recesses, formed in at least one between the semiconductor chip and the protective cap.

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29-08-2013 дата публикации

Method for the production of a substrate comprising embedded layers of getter material

Номер: US20130221497A1
Автор: Xavier Baillin

A method for producing a substrate with buried layers of getter material, including: making a first stack including one layer of a first getter material, arranged on a first support; making a second stack including one layer of a second getter material, arranged on a second support; and bringing the first stack into contact with the second stack and performing thermocompression, the layers of the first and of the second getter material being arranged between the first and the second support, at a temperature greater than or equal to a lowest temperature among thermal activation temperatures of the first and of the second getter material, to bond the layers of the first and second getter materials together.

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05-09-2013 дата публикации

High aspect ratio mems devices and methods for forming the same

Номер: US20130230939A1
Автор: Te-Hao Lee

An HF vapor etch etches high aspect ratio openings to form MEMS devices and other tightly-packed semiconductor devices with 0.2 μm air gaps between structures. The HF vapor etch etches oxide plugs and gaps with void portions and oxide liner portions and further etches oxide layers that are buried beneath silicon and other structures and is ideally suited to release cantilevers and other MEMS devices. The HF vapor etches at room temperature and atmospheric pressure in one embodiment. A process sequence is provided that forms MEMS devices including cantilevers and lateral, in-plane electrodes that are stationary and vibration resistant.

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12-09-2013 дата публикации

Method for coating micromechanical parts with dual diamond coating

Номер: US20130234165A1

Method for coating micromechanical components of a micromechanical system, in particular a watch movement, comprising: providing a substrate ( 4 ) component to be coated; providing said component with a first diamond coating ( 2 ) doped with boron; providing said component with a second diamond coating ( 3 ); wherein: said second diamond coating ( 3 ) is provided by CVD in a reaction chamber; during CVD deposition, during the last portion of the growth process, a controlled increase of the carbon content within the reaction chamber is provided, thereby providing an increase of the sp2/sp3 carbon ( 6 ) bonds up to an sp2 content substantially between 1% and 45%. Corresponding micromechanical components are also provided.

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03-10-2013 дата публикации

Disposable bond gap control structures

Номер: US20130255876A1
Автор: Buu Diep, Roland Gooch
Принадлежит: Raytheon Co

In certain embodiments, a bond gap control structure (BGCS) is placed outwardly from a substrate. The BGCS is configured to control a geometry of a bond line of a joining material. The joining material is deposited outwardly from the substrate. The substrate is bonded to another substrate with the joining material. The BGCS is at least partially removed from the substrate.

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03-10-2013 дата публикации

Semiconductor device and method of manufacturing the same

Номер: US20130256813A1
Автор: Yumi Maruyama
Принадлежит: Denso Corp

The semiconductor device has a sensor unit including a sensing part, and a semiconductor substrate. The semiconductor substrate is bonded to the sensor unit through an insulation film such that the sensing part is disposed in an air-tightly sealed chamber provided between a recessed portion of the semiconductor substrate and the sensor unit. A surface of the semiconductor substrate provided on a periphery of the recessed portion includes a boundary region at a perimeter of the recessed portion and a bonding region on a periphery of the boundary region. The bonding region has an area greater than an area of the boundary region. The bonding region of the semiconductor substrate is bonded to the sensor unit through the insulation film.

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14-11-2013 дата публикации

Method for mems device fabrication and device formed

Номер: US20130299926A1
Принадлежит: Cavendish Kinetics Inc

The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.

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21-11-2013 дата публикации

Composite Wafer Semiconductor

Номер: US20130307095A1
Автор: Bruce C.S. Chou

A composite wafer semiconductor device includes a first wafer and a second wafer. The first wafer has a first side and a second side, and the second side is substantially opposite the first side. The composite wafer semiconductor device also includes an isolation set is formed on the first side of the first wafer and a free space is etched in the isolation set. The second wafer is bonded to the isolation set. A floating structure, such as an inertia sensing device, is formed in the second wafer over the free space. In an embodiment, a surface mount pad is formed on the second side of the first wafer. Then, the floating structure is electrically coupled to the surface mount pad using a through silicon via (TSV) conductor.

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28-11-2013 дата публикации

Standardized topographical arrangements for template regions that orient self-assembly

Номер: US20130318483A1
Принадлежит: Massachusetts Institute of Technology

This disclosure relates generally to systems and methods of providing standardized topographical configurations for template regions. In one embodiment, a set of array arrangements is selected. Arrays of template structures are then formed on at least one substrate. Each of the arrays is arranged in accordance with an array arrangement in the set of array arrangements such that the arrays correspond surjectively onto the set of array arrangements. After the arrays are formed, a self-assembly material is provided on the arrays. Self-assembly patterns formed by self-assembling material as a result of the arrays may be empirically observed and used to map a set of self-assembly pattern arrangements surjectively onto the set of array arrangements. Using this mapping, a combination of the self-assembly pattern arrangements that match a target pattern arrangement can be used to select a combination of array arrangements from the set of array arrangements for a template region.

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12-12-2013 дата публикации

Structures and methods for electrically and mechanically linked monolithically integrated transistor and mems/nems devices

Номер: US20130328109A1
Автор: Amit Lal, Kwame Amponsah
Принадлежит: CORNELL UNIVERSITY

A device including a NEMS/MEMS machine(s) and associated electrical circuitry. The circuitry includes at least one transistor, preferably JFET, that is used to: (i) actuate the NEMS/MEMS machine; and/or (ii) receive feedback from the operation of the NEMS/MEMS machine The transistor (e.g., the JFET) and the NEMS/MEMS machine are monolithically integrated for enhanced signal transduction and signal processing. Monolithic integration is preferred to hybrid integration (e.g., integration using wire bonds, flip chip contact bonds or the like) due to reduce parasitics and mismatches. In one embodiment, the JFET is integrated directly into a MEMS machine, that is in the form of a SOI MEMS cantilever, to form an extra-tight integration between sensing and electronic integration. When a cantilever connected to the JFET is electrostatically actuated; its motion directly affects the current in the JFET through monolithically integrated conduction paths (e.g., traces, vias, etc.) In one embodiment, devices according to the present invention were realized in 2?m thick SOI cross-wire beams, with a MoSi2 contact metallization for stress minimization and ohmic contact. In this embodiment, the pull-in voltage for the MEMS cantilever was 21V and the pinch-off voltage of the JFET was −19V.

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19-12-2013 дата публикации

MEMS Sensing Device and Method for the Same

Номер: US20130334623A1
Принадлежит: PixArt Imaging Inc

The present invention discloses a MEMS sensing device which comprises a substrate, a MEMS device region, a film, an adhesive layer, a cover, at least one opening, and a plurality of leads. The substrate has a first surface and a second surface opposite the first surface. The MEMS device region is on the first surface, and includes a chamber. The film is overlaid on the MEMS device region to seal the chamber as a sealed space. The cover is mounted on the MEMS device region and adhered by the adhesive layer. The opening is on the cover or the adhesive layer, allowing the pressure of the air outside the device to pressure the film. The leads are electrically connected to the MEMS device region, and extend to the second surface.

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09-01-2014 дата публикации

Manufacturing method of electronic packaging

Номер: US20140007425A1
Принадлежит: Merry Electronics Co Ltd

A manufacturing method of electronic packaging includes the steps of preparing a metallic plate having an array of cover portions, soldering the metallic plate to a circuit board having encapsulated areas corresponding to the cover portions and employing a cutting process to obtain multiple electronic packages. Thus, the invention has the advantages of low cost and high efficiency

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16-01-2014 дата публикации

Mems device

Номер: US20140016798A1
Принадлежит: Wolfson Microelectronics plc

A method of fabricating a micro-electrical-mechanical system (MEMS) apparatus on a substrate comprises the steps of processing the substrate so as to fabricate an electronic circuit; depositing a first electrode that is operably coupled with the electronic circuit; depositing a membrane so that it is mechanically coupled to the first electrode; applying a sacrificial layer; depositing a structural layer and a second electrode that is operably coupled with the electronic circuit so that the sacrificial layer is disposed between the membrane and the structural layer so as to form a preliminary structure; singulating the substrate; and removing the sacrificial layer so as to form a MEMS structure, in which the step of singulating the substrate is carried out before the step of removing the sacrificial layer.

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06-02-2014 дата публикации

Fabrication of a floating rocker mems device for light modulation

Номер: US20140036345A1
Принадлежит: Cavendish Kinetics Inc

The current disclosure shows how to make a fast switching array of mirrors for projection displays. Because the mirror does not have a via in the middle connecting to the underlying spring support, there is an improved contrast ratio that results from not having light scatter off the legs or vias like existing technologies. Because there are no supporting contacts, the mirror can be made smaller making smaller pixels that can be used to make higher density displays. In addition, because there is not restoring force from any supporting spring support, the mirror stays in place facing one or other direction due to adhesion. This means there is no need to use a voltage to hold the mirror in position. This means that less power is required to run the display.

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20-02-2014 дата публикации

Detachable components for space-limited applications through micro and nanotechnology (decal-mnt)

Номер: US20140049933A1
Принадлежит: Harting AG and Co KG

The invention relates to space-saving micro- and nano-components and to methods for producing same. The components are characterized in that they do not comprise a rigid substrate having a considerable thickness. The mechanical stresses, which result in deformations and/or warpage within a component, are compensated by means of a mechanically stress-compensated design and/or by means of active mechanical stress compensation by depositing suitable stress compensation layers such that there is no need for relatively thick substrates. Thus, the overall thickness of the components is decreased and the integration options thereof in technical systems are improved. In addition, the field of application of such components is expanded.

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27-02-2014 дата публикации

Semiconductor structures provided within a cavity and related design structures

Номер: US20140054728A1

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity. The method for forming the cavity further includes forming at least one first vent hole of a first dimension which is sized to avoid or minimize material deposition on a beam structure during sealing processes. The method for forming the cavity further includes forming at least one second vent hole of a second dimension, larger than the first dimension.

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06-03-2014 дата публикации

Mems packaging scheme using dielectric fence

Номер: US20140061824A1
Принадлежит: STMicroelectronics lnc USA

A packaging scheme for MEMS device is provided. A method of packaging MEMS device in a semiconductor structure includes forming an insulation fence that surrounds the MEMS device on the semiconductor structure. The method further includes attaching a wafer of dielectric material to the insulation fence. The lid wafer, the insulation fence, and the semiconductor structure enclose the MEMS device.

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06-03-2014 дата публикации

Sensor packaging method and sensor packages

Номер: US20140061948A1
Принадлежит: FREESCALE SEMICONDUCTOR INC

A method ( 80 ) entails providing ( 82 ) a structure ( 117 ), providing ( 100 ) a controller element ( 102, 24 ), and bonding ( 116 ) the controller element to an outer surface ( 52, 64 ) of the structure ( 117 ). The structure includes a sensor wafer ( 92 ) and a cap wafer ( 94 ). Inner surfaces ( 34, 36 ) of the wafers ( 92, 94 ) are coupled together, with sensors ( 30 ) interposed between the wafers ( 92, 94 ). One wafer ( 94, 92 ) includes a substrate portion ( 40, 76 ) with bond pads ( 42 ) formed on its inner surface ( 34, 36 ). The other wafer ( 94, 92 ) conceals the substrate portion ( 40, 76 ). After bonding, methodology ( 80 ) entails forming ( 120 ) conductive elements ( 60 ) on the element ( 102, 24 ), removing ( 126 ) material sections ( 96, 98, 107 ) from the wafers ( 92, 94, 102 ) to expose the bond pads ( 42 ), forming ( 130 ) electrical interconnects ( 56 ), applying ( 134 ) packaging material ( 64 ), and singulating ( 138 ) to produce sensor packages ( 20, 70 ).

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13-03-2014 дата публикации

Pattern forming method

Номер: US20140069325A1
Автор: Ayako KAWANISHI
Принадлежит: Toshiba Corp

According to one embodiment, a pattern forming method includes forming a graphoepitaxy on a substrate, a process of forming a first self-assembly material layer that contains a first segment and a second segment in a depressed portion of the graphoepitaxy, a process of forming a first self-assembly pattern that has a first region containing the first segment, and a second region containing the second segment by performing a phase separation of the first self-assembly material layer, a process of forming a second self-assembly material layer containing a third segment and a fourth segment on a projected portion of the graphoepitaxy, and the first self-assembly pattern, a process of forming a second self-assembly pattern that has a third region containing the third segment, and a fourth region containing the fourth segment by performing a phase separation of the second self-assembly material layer.

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01-01-2015 дата публикации

OSCILLATION FREQUENCY MEASURING SYSTEM AND METHOD FOR A MEMS SENSOR

Номер: US20150000402A1
Принадлежит:

A MEMS sensor has at least a movable element designed to oscillate at an oscillation frequency, and an integrated measuring system coupled to the movable element to provide a measure of the oscillation frequency. The measuring system has a light source to emit a light beam towards the movable element and a light detector to receive the light beam reflected back from the movable element, including a semiconductor photodiode array. In particular, the light detector is an integrated photomultiplier having an array of single photon avalanche diodes. 1. A device , comprising: a movable element configured to oscillate at an oscillation frequency; and', a light source configured to emit a light beam towards the movable element; and', 'a light detector configured to receive the light beam reflected back from the movable element, the light detector including a semiconductor photodiode array., 'an integrated measuring system coupled to the movable element and configured to provide a measure of the oscillation frequency, the measuring system including], 'a MEMS sensor including2. The device according to wherein the light detector is an integrated photomultiplier including an array of single-photon avalanche diodes.3. The device according to wherein the measuring system is integrated in a body including semiconductor material claim 1 , and the movable element is coupled to the body claim 1 , suspended above a front surface of the body claim 1 , the moveable element having a bottom surface that faces the front surface claim 1 , the light beam being configured to hit the bottom surface of the moveable element and reflect back to the front surface.4. The device according to wherein the light source is optically confined within the body by a surrounding confinement region claim 3 , separating the light source from the light detector within the body.5. The device according to claim 1 , further comprising an electronic detection circuit claim 1 , operatively coupled to the light ...

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06-01-2022 дата публикации

CAVITY SOI SUBSTRATE

Номер: US20220002142A1
Принадлежит:

A cavity SOI substrate that includes a first silicon substrate having a cavity; a second silicon substrate bonded to the first silicon substrate, wherein the second silicon substrate includes a first portion oppositely aligned with the cavity of the first silicon substrate and that is thicker than a second portion of the second silicon substrate that is bonded to the first silicon substrate; and a silicon oxide film interposed between the first silicon substrate and the second silicon substrate. 1. A cavity SOI substrate comprising:a first silicon substrate having a cavity; anda second silicon substrate bonded to the first silicon substrate, wherein the second silicon substrate includes a first portion oppositely aligned with the cavity of the first silicon substrate and that is thicker than a second portion of the second silicon substrate that is bonded to the first silicon substrate; anda silicon oxide film interposed between the first silicon substrate and the second silicon substrate.2. The cavity SOI substrate according to claim 1 , wherein a surface of the second silicon substrate on a side thereof bonded to the first silicon substrate has a thickness that increases linearly in a direction from the second portion bonded to the first silicon substrate toward the first portion oppositely aligned with the cavity.3. The cavity SOI substrate according to claim 2 , wherein a central region of the first portion oppositely aligned with the cavity includes a zone with a constant thickness.4. The cavity SOI substrate according to claim 1 , wherein a surface of the second silicon substrate on a side thereof bonded to the first silicon substrate has a curved shape with a thickness that increases in a direction from the second portion bonded to the first silicon substrate toward the first portion oppositely aligned with the cavity.5. The cavity SOI substrate according to claim 4 , wherein a central region of the first portion oppositely aligned with the cavity includes a ...

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06-01-2022 дата публикации

Device and method for monitoring surface condition of contact surface of detected object

Номер: US20220002148A1
Принадлежит: National Taiwan University NTU

A surface monitoring device is for monitoring a contact surface of a detected object. The surface monitoring device and the detected object are disposed on a substrate. The surface monitoring device includes a resonant mechanical part, having a contact tip adjacent to the contact surface by a preset gap in a static state. A driving circuit, applying an AC input signal to drive the resonant mechanical part to cause the contact tip to vibrate with respect to the contact surface at a plurality of sampling frequencies. The contact tip substantially hits the contact surface in a tapping bandwidth within the sampling frequencies. An analysis circuit to analyze a ratio of an output voltage to an input voltage of the input signal and determine the tapping bandwidth, wherein the ratio in the tapping bandwidth is jumping to a flatten phase.

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03-01-2019 дата публикации

MULTILAYER FLUIDIC DEVICES AND METHODS FOR THEIR FABRICATION

Номер: US20190001328A1
Принадлежит:

A method of making a flowcell includes bonding a first surface of an organic solid support to a surface of a first inorganic solid support via a first bonding layer, wherein the organic solid support includes a plurality of elongated cutouts. The method further includes bonding a surface of a second inorganic solid support to a second surface of the organic solid support via a second bonding layer, so as to form the flowcell. The formed flowcell includes a plurality of channels defined by the surface of the first inorganic solid support, the surface of the second inorganic solid support, and walls of the elongated cutouts. 138-. (canceled)39. A method of making a flowcell , the method comprising:bonding a first surface of an organic solid support to a surface of a first inorganic solid support via a first bonding layer, wherein the organic solid support includes a plurality of elongated cutouts;bonding a surface of a second inorganic solid support to a second surface of the organic solid support via a second bonding layer, so as to form the flowcell;wherein the formed flowcell comprises a plurality of channels defined by the surface of the first inorganic solid support, the surface of the second inorganic solid support, and walls of the elongated cutouts.40. The method of claim 39 , further comprising:before bonding the first surface of the organic solid support to the surface of the first inorganic solid, forming the first bonding layer on an entirety of the surface of the first inorganic solid support; andbefore bonding the surface of the second inorganic solid support to the second surface of the organic solid support, forming the second bonding layer on an entirety of the surface of the first inorganic solid support.41. The method of claim 39 , wherein:each of the first and second bonding layers is formed of a radiation-absorbing material;bonding the first surface of the organic solid support to the surface of the first inorganic solid comprises irradiating the ...

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07-01-2021 дата публикации

Surface micromechanical element and method for manufacturing the same

Номер: US20210002127A1
Принадлежит:

The present publication discloses a micromechanical structure including at least one active element, the micromechanical structure comprising a substrate, at least one layer formed on the substrate forming the at least part of the at least one active element, mechanical contact areas through which the micromechanical structure can be connected to other structures like printed circuit boards and like. In accordance with the invention the micromechanical structure includes weakenings like trenches around the mechanical contact areas for eliminating the thermal mismatch between the active element of the micromechanical structure and the other structures. 1. An arrangement comprising:a microelectromechanical, MEMS, structure including at least one active element, the MEMS structure comprising a substrate, at least one layer formed on the substrate forming at least part of the at least one active element, mechanical contact areas through which the MEMS structure is connectable to other structures, and trench weakenings included around the mechanical contact areas for eliminating thermal mismatch between the at least one active element of the MEMS structure and the other structures, andan integrated circuit, whereinthe MEMS structure comprises an encapsulation, the MEMS structure being assembled directly on the integrated circuit, the integrated circuit forming part of the encapsulation.2. The micromechanical structure of claim 1 , wherein the integrated circuit comprises a read-out application specific integrated circuit claim 1 , ASIC.3. The micromechanical structure of claim 2 , wherein the MEMS structure comprises one of the following: a resonator claim 2 , a gyroscope claim 2 , an accelerometer claim 2 , an acoustic or ultrasonic microphone claim 2 , a capacitive micromechanical ultrasonic transducer claim 2 , a piezo micromechanical ultrasonic transducer claim 2 , a micromechanical mirror structure claim 2 , a magnetometer claim 2 , a Fabry-Perot interferometer ...

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07-01-2021 дата публикации

ENCLOSED CAVITY STRUCTURES

Номер: US20210002128A1
Принадлежит:

An example of a cavity structure comprises a cavity substrate comprising a substrate surface, a cavity extending into the cavity substrate, the cavity having a cavity bottom and cavity walls, and a cap disposed on a side of the cavity opposite the cavity bottom. The cavity substrate, the cap, and the one or more cavity walls form a cavity enclosing a volume. A component can be disposed in the cavity and can extend above the substrate surface. The component can be a piezoelectric or a MEMS device. The cap can have a tophat configuration. The cavity structure can be micro-transfer printed from a source wafer to a destination substrate. 1. A cavity structure , comprising:a cavity substrate comprising a substrate surface;a cavity extending into the cavity substrate away from the substrate surface, the cavity having one or more cavity walls; anda cap disposed on or over the cavity substrate, wherein (i) the cap is disposed on the substrate surface, or (ii) the cap is disposed on a structure disposed on the substrate surface,wherein the cavity substrate, the cap, and the one or more cavity walls form at least a portion of an enclosed cavity that encloses a volume.2. The cavity structure of claim 1 , wherein the cavity comprises a cavity bottom disposed in the cavity substrate that claim 1 , in part claim 1 , encloses the volume.3. The cavity structure of claim 1 , wherein at least a portion of the one or more cavity walls are disposed on and extend away from the substrate surface toward the cap.4. The cavity structure of claim 1 , comprising a destination substrate claim 1 , the cavity substrate is disposed on the destination substrate claim 1 , and wherein the cavity extends through the cavity substrate to the destination substrate and at least a portion of the destination substrate forms a cavity bottom.5. The cavity structure of claim 4 , wherein the cap is disposed on the destination substrate or a layer disposed on the destination substrate.6. The cavity structure of ...

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07-01-2021 дата публикации

CAPPING PLATE FOR PANEL SCALE PACKAGING OF MEMS PRODUCTS

Номер: US20210002130A1
Принадлежит: OBSIDIAN SENSORS, INC.

A method of manufacturing MEMS housings includes: providing glass spacers; providing a window plate; attaching the window plate to the glass spacers; aligning the glass spacers with a device glass plate having MEMS devices thereon; bonding the glass spacers to the device glass plate; and singulating the glass spacers, window plate, and device glass plate to produce the MEMS housings. 1. A method of manufacturing microelectromechanical systems (“MEMS”) products comprising:providing glass spacers;providing a window plate;attaching the window plate to the glass spacers;aligning the glass spacers with a MEMS device glass plate;bonding the glass spacers to the MEMS device glass plate; andsingulating the glass spacers, window plate, and MEMS device glass plate to produce the MEMS products.2. The method of claim 1 , wherein the MEMS device glass plate and the window plate each measure at least 750 mm by 620 mm.3. The method of claim 1 , wherein the window plate is sufficiently thick and stiff to provide structural support.4. The method of claim 1 , wherein providing a window plate comprises depositing an anti-reflective coating on the glass spacers and coupling a wavelength-specific transmissive window to the anti-reflective coating.5. The method of claim 4 , wherein depositing the anti-reflective coating comprises thin-film depositing at least two layers with different refractive indexes.6. The method of claim 1 , wherein providing a window plate comprises thin-film depositing a wavelength-specific transmissive window.7. The method of claim 1 , wherein providing glass spacers comprises:providing a glass substrate; andforming the glass spacers from the glass substrate, wherein depositing the anti-reflective coating precedes forming the glass spacers from the glass substrate.8. The method of claim 1 , wherein providing glass spacers comprises:providing a glass substrate; andforming the glass spacers from the glass substrate.9. The method of claim 8 , wherein attaching a ...

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07-01-2021 дата публикации

METHOD FOR MANUFACTURING MICROMECHANICAL STRUCTURES IN A DEVICE WAFER

Номер: US20210002131A1
Автор: Fujii Hidetoshi
Принадлежит:

The disclosure relates to a method for manufacturing recessed micromechanical structures in a MEMS device wafer. First vertical trenches in the device wafer define the horizontal dimensions of both level and recessed structures. The horizontal face of the device wafer and the vertical sidewalls of the first vertical trenches are then covered with a self-supporting etching mask which is made of a self-supporting mask material, which is sufficiently rigid to remain standing vertically in the location where it was deposited even as the sidewall upon which it was deposited is etched away. Recess trenches are then etched under the protection of the self-supporting mask. The method allows a spike-preventing aggressive etch to be used for forming the recess trenches, without harming the sidewalls in the first vertical trenches. 1. A method for manufacturing micromechanical structures in a device wafer , wherein the manufactured structures include at least one level micromechanical structure which is level with regard to a horizontal face of the device wafer , and at least one recessed micromechanical structure which is recessed with regard to the horizontal face of the device wafer , and the method comprises the steps of:a) patterning two or more etching masks on the horizontal face of the device wafer, wherein a level etching mask defines at least the horizontal dimensions of the level micromechanical structures, and one or more recess etching masks which define at least the horizontal dimensions of the recessed micromechanical structures,b) etching first vertical trenches in the regions of the device wafer which are not protected by either the level or recess etching masks,c) removing one recess etching mask from the horizontal face of the device wafer,d) covering the horizontal face of the device wafer and the vertical sidewalls of the first vertical trenches with a self-supporting etching mask which is made of a self-supporting material,e) removing the self-supporting ...

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07-01-2021 дата публикации

Semiconductor Device, Microphone and Methods for Forming a Semiconductor Device

Номер: US20210002132A1
Принадлежит:

A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide. 1. A method for forming a semiconductor device , the method comprising:forming a structured metal layer above a semiconductor substrate, wherein a thickness of the structured metal layer is more than 100 nm; andforming a covering layer after forming the structured metal layer, such that the covering layer lies adjacent to a front side of the structured metal layer and adjacent to a side wall of the structured metal layer, wherein the covering layer comprises amorphous silicon carbide doped or alloyed with chromium (Cr).2. The method as claimed in claim 1 , wherein forming the covering layer is carried out at a temperature of less than 450° C.3. The method as claimed in claim 1 , wherein the covering layer is formed by performing a plasma deposition claim 1 , and wherein the plasma deposition is carried out at a pressure of less than 70 kPa.4. The method as claimed in claim 3 , wherein helium is used as dilution gas during the plasma deposition.5. The method as claimed in claim 4 , wherein a helium concentration during the plasma deposition is more than 20%.6. The method as claimed in claim 1 , further comprising producing a membrane structure of the semiconductor device.7. The method as claimed in claim 6 , further comprising removing a sacrificial layer below the membrane structure after forming the covering layer in order to form a cutout below the membrane structure.8. The method as claimed in claim 7 , wherein the sacrificial layer is an oxide layer claim 7 , and wherein ...

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07-01-2016 дата публикации

SEMICONDUCTOR DEVICE WITH THROUGH MOLDING VIAS AND METHOD OF MAKING THE SAME

Номер: US20160002027A1
Принадлежит:

A method of forming a semiconductor device includes bonding a capping wafer and a base wafer to form a wafer package. The base wafer includes a first chip package portion, a second chip package portion, and a third chip package portion. The capping wafer includes a plurality of isolation trenches. Each isolation trench of the plurality of isolation trenches is substantially aligned with a corresponding trench region of one of the first chip package portion, the second chip package portion or the third chip package portion. The method also includes removing a portion of the capping wafer to expose a first chip package portion contact, a second chip package portion contact, and a third chip package portion contact. The method further includes separating the wafer package into a first chip package configured to perform a first operation, a second chip package configured to perform a second operation, and a third chip package configured to perform a third operation. 1. A method of forming a semiconductor device , the method comprising:bonding a capping wafer and a base wafer to form a wafer package, the base wafer comprises a first chip package portion, a second chip package portion, and a third chip package portion, and', 'the capping wafer comprises a plurality of isolation trenches, each isolation trench of the plurality of isolation trenches is substantially aligned with a corresponding trench region of one of the first chip package portion, the second chip package portion or the third chip package portion;, 'wherein'}removing a portion of the capping wafer to expose a first chip package portion contact, a second chip package portion contact, and a third chip package portion contact; andseparating the wafer package into a first chip package configured to perform a first operation, a second chip package configured to perform a second operation, and a third chip package configured to perform a third operation.2. The method of claim 1 , further comprising:bonding the ...

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07-01-2016 дата публикации

Integrated cmos and mems sensor fabrication method and structure

Номер: US20160002028A1
Автор: Peter Smeys
Принадлежит: InvenSense Inc

A method of providing a CMOS-MEMS structure is disclosed. The method comprises patterning a first top metal on a MEMS actuator substrate and a second top metal on a CMOS substrate. Each of the MEMS actuator substrate and the CMOS substrate include an oxide layer thereon. The method includes etching each of the oxide layers on the MEMS actuator substrate and the base substrate, utilizing a first bonding step to bond the first patterned top metal of the MEMS actuator substrate to the second patterned top metal of the base substrate. Finally the method includes etching an actuator layer into the MEMS actuator substrate and utilizing a second bonding step to bond the MEMS actuator substrate to a MEMS handle substrate.

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07-01-2016 дата публикации

METHOD OF FABRICATION OF AI/GE BONDING IN A WAFER PACKAGING ENVIRONMENT AND A PRODUCT PRODUCED THEREFROM

Номер: US20160002029A1
Принадлежит:

A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer. 1. A method for bonding a first substrate wafer and a second substrate wafer , a patterned aluminum layer disposed on the first substrate wafer , a patterned germanium layer disposed on the second substrate wafer , the method comprising:placing the first substrate wafer in a first chuck;placing the second substrate wafer in a second chuck;aligning the first substrate wafer and the second substrate wafer; andforming a eutectic bond between the patterned germanium layer and the patterned aluminum layer, wherein the eutectic bond is formed by applying a force across the first chuck and the second chuck, and ramping the temperature over the eutectic point of the aluminum/germanium bond to a second predetermined temperature that is less than 450° C.2. The method of claim 1 , wherein one of the first and second substrate wafers is a cover wafer.3. The method of claim 1 , wherein providing an insulating layer between the second substrate wafer and a portion of the patterned germanium layer.4. A method for bonding a first substrate wafer and a second substrate wafer claim 1 , an aluminum layer disposed on the first substrate wafer claim 1 , a germanium layer disposed on the second substrate wafer claim 1 , the method comprising:placing the first substrate wafer in a first chuck;placing the second substrate wafer in a second chuck; ...

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05-01-2017 дата публикации

Microstructure plating systems and methods

Номер: US20170001856A1
Принадлежит: Honeywell International Inc

Microstructure plating systems and methods are described herein. One method includes depositing a plating-resistant material between a microstructure and a bonding layer, wherein the microstructure comprises a plating process base material and immersing the microstructure in a plating solution.

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05-01-2017 дата публикации

Sensor element and method of manufacturing the same

Номер: US20170001857A1
Принадлежит: Samsung Electro Mechanics Co Ltd

Provided are sensor elements and a method of manufacturing the same. The sensor element includes a die, an active part including a frame surrounded by the die, a first trench disposed between the die and the active part, and a bridge connecting the die and the frame and a second trench being formed in the bridge, whereby electrical connection from the active part to an electrode pad may be secured and transfer of external stress to the active part may be significantly reduced through the second trench.

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05-01-2017 дата публикации

Electronic systems with through-substrate interconnects and mems device

Номер: US20170001858A1
Принадлежит: Kionix Inc

Disclosed are systems, methods, and computer program products for electronic systems with through-substrate interconnects and mems device. An interconnect formed in a substrate having a first surface and a second surface, the interconnect includes: a bulk region; a via extending from the first surface to the second surface; an insulating structure extending through the first surface into the substrate and defining a closed loop around the via, wherein the insulating structure comprises a seam portion separated by at least one solid portion; and an insulating region extending from the insulating structure toward the second surface, the insulating region separating the via from the bulk region, wherein the insulating structure and insulating region collectively provide electrical isolation between the via and the bulk region.

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05-01-2017 дата публикации

MEMS Devices and Fabrication Methods Thereof

Номер: US20170001860A1
Принадлежит:

A device includes a carrier having a plurality of cavities, a micro-electro-mechanical system (MEMS) substrate bonded on the carrier, wherein the MEMS substrate comprises a shielding layer on the carrier and coupled to ground, a plurality of vias coupled between the shielding layer and a bottom electrode of the MEMS substrate and a moving element over the bottom electrode and a semiconductor substrate bonded on the MEMS substrate, wherein the semiconductor substrate comprises a top electrode, and wherein the moving element is between the top electrode and the bottom electrode. 1. A semiconductor device comprising:a carrier having a plurality of cavities; a shielding layer on the carrier and coupled to ground;', 'a plurality of vias coupled between the shielding layer and a bottom electrode of the MEMS substrate; and', 'a moving element over the bottom electrode; and, 'a micro-electro-mechanical system (MEMS) substrate bonded on the carrier, wherein the MEMS substrate comprisesa semiconductor substrate bonded on the MEMS substrate, wherein the semiconductor substrate comprises a top electrode, and wherein the moving element is between the top electrode and the bottom electrode.2. The semiconductor device of claim 1 , wherein:the MEMS substrate comprises a plurality of air channels coupled to the cavities of the carrier.3. The semiconductor device of claim 1 , wherein:the shielding layer is formed of polysilicon; andthe bottom electrode is formed of polysilicon.4. The semiconductor device of claim 1 , further comprising:an oxide layer over and in contact with the shielding layer.5. The semiconductor device of claim 4 , wherein:the plurality of vias extend through the oxide layer.6. The semiconductor device of claim 1 , wherein:the shielding layer is in contact with the carrier.7. The semiconductor device of claim 1 , further comprising:a conductive layer formed between the semiconductor substrate and the MEMS substrate, wherein the conductive layer is thinner than the ...

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05-01-2017 дата публикации

METHOD OF INCREASING MEMS ENCLOSURE PRESSURE USING OUTGASSING MATERIAL

Номер: US20170001861A1
Принадлежит:

Semiconductor manufacturing processes include providing a first substrate having a first passivation layer disposed above a patterned top-level metal layer, and further having a second passivation layer disposed over the first passivation layer; the second passivation layer has a top surface. The processes further include forming an opening in a first portion of the second passivation layer, and the opening exposes a portion of a surface of the first passivation layer. The processes further include patterning the second and first passivation layers to expose portions of the patterned top-level metal layer and bonding a second substrate and the first substrate to each other. The bonding occurs within a temperature range in which at least the exposed portion of the first passivation layer undergoes outgassing. 2. The method of claim 1 , wherein the second passivation layer is disposed on the first passivation layer.3. The method of claim 1 , wherein the first passivation layer comprises silicon oxide and the second passivation layer comprises silicon nitride.4. The method of claim 1 , wherein forming the conformal layer of material comprises exposing the first substrate to a high density plasma.5. The method of claim 1 , wherein forming the conformal layer of material comprises forming an oxide dielectric layer by high density plasma deposition.6. The method of claim 1 , wherein planarizing comprises chemical mechanical planarization (CMP).7. The method of claim 1 , wherein bonding comprises forming an AlGe eutectic.8. The method of claim 1 , wherein bonding the second substrate and the first substrate to each other forms sealed enclosures.9. The method of claim 8 , wherein the sealed cavities are formed before the material undergoes outgassing claim 8 , and wherein outgassing increases enclosure pressure.10. The method of claim 9 , wherein the first substrate contains transistor circuits.11. A method of forming a plurality of microelectromechanical system (MEMS)- ...

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04-01-2018 дата публикации

3D MEMS DEVICE WITH HERMETIC CAVITY

Номер: US20180002163A1
Автор: Boysel Robert Mark
Принадлежит:

A three dimensional (3D) micro-electro-mechanical system (MEMS) device is provided. The device comprises a central MEMS wafer, and top and bottom cap wafers. The MEMS wafer includes a MEMS structure, such as an inertial sensor. The 5 top cap wafer, the bottom cap wafer and the MEMS wafers are stacked along a stacking axis and together form at least one hermetic cavity enclosing the MEMS structure. At least one of the top cap wafer and the bottom cap wafer is a silicon-on- insulator (SOI) cap wafer comprising a cap device layer, a cap handle layer and a cap insulating layer interposed between the cap device layer and the cap handle layer. At 10 least one electrically conductive path extends through the SOI cap wafer, establishing an electrical convection between an outer electrical contact provided on the SOI cap wafer and the MEMS structure. 1. A three dimensional (3D) micro-electro-mechanical system (MEMS) device comprising:a MEMS wafer including a MEMS structure, the MEMS wafer having opposed first and second sides;a top cap wafer and a bottom cap wafer respectively bonded to the first side and the second side of the MEMS wafer, the top cap wafer, the bottom cap wafer and the MEMS wafer being stacked along a stacking axis and together forming at least one hermetic cavity enclosing the MEMS structure, at least one of the top cap wafer and the bottom cap wafer being a silicon-on-insulator (SOI) cap wafer comprising a cap device layer, a cap handle layer and a cap insulating layer interposed between the cap device layer and the cap handle layer, one of the cap handle layer and of the cap device layer having an inner side bonded to the MEMS wafer, and the other one of the cap handle layer and of the cap device layer having an outer side with outer electrical contacts formed thereon; andan electrically conductive path extending through the cap handle layer and through the cap device layer of the SOI cap wafer, the electrically conductive path establishing an electrical ...

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04-01-2018 дата публикации

Protective Coating on Trench Features of a Wafer and Method of Fabrication Thereof

Номер: US20180002165A1
Автор: Mikko Va Suvanto
Принадлежит: Akustica Inc, ROBERT BOSCH GMBH

A coating for protecting a wafer from moisture and debris due to dicing, singulating, or handling the wafer is provided. A semiconductor sensor device comprises a wafer having a surface and at least one trench feature and the protective coating covering the trench feature. The trench feature comprises a plurality of walls and the walls are covered with the protective coating, wherein the walls of the trench feature are formed as a portion of the semiconductor sensor device. The semiconductor sensor device further comprises a patterned mask formed on the wafer before the trench feature is formed, wherein the protective coating is formed directly to the trench feature and the patterned mask. The semiconductor sensor device is selected from a group consisting of a MEMS die, a sensor die, a sensor circuit die, a circuit die, a pressure die, an accelerometer, a gyroscope, a microphone, a speaker, a transducer, an optical sensor, a gas sensor, a bolometer, a giant megnetoresistive sensor (GMR), a tunnel magnetoresistive (TMR) sensor, an environmental sensor, and a temperature sensor.

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04-01-2018 дата публикации

MEMS Device with Multi Pressure

Номер: US20180002166A1

Micro-electromechanical (MEMS) devices and methods of forming are provided. The MEMS device includes a first substrate including a first conductive feature, a first movable element positioned over the first conductive feature, a second conductive feature, and a second movable element positioned over the second conductive feature. The MEMS device also includes a cap bonded to the first substrate, where the cap and the first substrate define a first sealed cavity and a second sealed cavity. The first conductive feature and the first movable element are disposed in the first sealed cavity and the second conductive feature and the second movable element are disposed in the second sealed cavity. A pressure of the second cavity is higher than a pressure of the first sealed cavity, and an out gas layer is disposed in a recess of the cap that partially defines the second sealed cavity.

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04-01-2018 дата публикации

MICROMECHANICAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20180002167A1
Принадлежит:

A micromechanical structure in accordance with various embodiments may include: a substrate; and a functional structure arranged at the substrate; wherein the functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region; and wherein at least a section of the functional region has an elastic modulus in the range from about 5 GPa to about 70 GPa. 1. A micromechanical structure , comprising:a substrate; anda functional structure arranged at the substrate;wherein the functional structure comprises a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region; andwherein at least a section of the functional region has an elastic modulus in the range from about 5 GPa to about 70 GPa.2. The micromechanical structure of claim 1 , wherein the at least a section comprises a material having a density in the range from about 1 g/cmto about 16 g/cm.3. The micromechanical structure of claim 1 , wherein the at least a section comprises a material having a coefficient of thermal expansion (CTE) in the range from about 1·10/Kelvin to about 6·10/Kelvin.4. The micromechanical structure of claim 1 , wherein the at least a section comprises a compound material comprising at least two elements.5. The micromechanical structure of claim 1 , wherein the at least a section comprises amorphous hydrogenated silicon carbide (a-SiC:H).6. The micromechanical structure of claim 5 , wherein the a-SiC:H has a carbon content in the range from about 1 at.-% to about 99 at.-%.7. The micromechanical structure of claim 5 , wherein the a-SiC:H has a hydrogen content in the range from about 1 at.-% to about 66 at.-%.8. The micromechanical structure of claim 1 , wherein the at least a section comprises amorphous hydrogenated carbon (a-C:H).9. The micromechanical structure of claim 1 , wherein the at least a section comprises a base material that is ...

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02-01-2020 дата публикации

MEMS Package and Method of Manufacturing the Same

Номер: US20200002160A1
Принадлежит:

A MEMS package has a MEMS chip, and a package substrate which the MEMS chip is adhered. The MEMS chip has an element substrate which a movable element is formed. The MEMS package has a plurality of bonding bumps adhered to both of an opposing surface, of the element substrate and the package substrate. The MEMS package has unevenly arranged structure which all the plurality of bonding bumps are unevenly arranged in a part of the opposing surface. 1. A MEMS package comprising:a MEMS chip, and a package substrate which the MEMS chip is adhered;wherein the MEMS chip comprises an element substrate which a movable element is formed,wherein the MEMS package comprises a plurality of bonding bumps adhered to both an opposing surface, of the element substrate, which opposes the package substrate and the package substrate,wherein the MEMS package comprises an unevenly arranged structure which all the plurality of bonding bumps are unevenly arranged in a part of the opposing surface.2. The MEMS package according to claim 1 ,wherein the opposing surface comprises a boding area, which all the plurality of bonding bumps are arranged, and a non-bonding area, which the bonding bumps are not arranged, the size of the non-bonding area is larger than the size of the boding area.3. The MEMS package according to claim 1 ,wherein the opposing surface comprises a boding area, which all the plurality of bonding bumps are arranged, and a non-bonding area, which the bonding bumps are not arranged, the size of the non-bonding area is larger than the size of the boding area,wherein the MEMS package further comprises a dummy bump which is arranged in the non-bonding area, and which is adhered to the opposing surface and is not adhered to the package substrate.4. The MEMS package according to claim 2 ,wherein the element substrate is formed in a rectangular-shape in a plan view,wherein the bonding area is assigned to an area including only one of the four corner parts of the opposing surface.5. ...

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02-01-2020 дата публикации

SEMICONDUCTOR DEVICE PACKAGES AND METHODS OF MANUFACTURING THE SAME

Номер: US20200002162A1

A semiconductor device package includes a semiconductor device, a non-semiconductor substrate over the semiconductor device, and a first connection element extending from the semiconductor device to the non-semiconductor substrate and electrically connecting the semiconductor device to the non-semiconductor substrate. 1. A semiconductor device package , comprising:a semiconductor device;a non-semiconductor substrate over the semiconductor device; anda first connection element extending from the semiconductor device to the non-semiconductor substrate and electrically connecting the semiconductor device to the non-semiconductor substrate.2. The semiconductor device package of claim 1 , further comprising a patterned insulation layer between the semiconductor device and the non-semiconductor substrate.3. The semiconductor device package of claim 2 , wherein the non-semiconductor substrate comprises a through hole claim 2 , the first connection element extending from the semiconductor device into the through hole.4. The semiconductor device package of claim 3 , further comprising a second connection element in the through hole of the non-semiconductor substrate and surrounding the first connection element.5. The semiconductor device package of claim 4 , wherein the second connection element at least partially fills the through hole thereby forming a space between the semiconductor device claim 4 , the patterned insulation layer claim 4 , and the non-semiconductor substrate.6. The semiconductor device package of claim 2 , wherein the first connection element comprises solder material.7. The semiconductor device package of claim 1 , wherein the non-semiconductor substrate further comprises a patterned conductive layer on a surface away from the semiconductor device.8. The semiconductor device package of claim 1 , wherein the non-semiconductor substrate is narrower than the semiconductor device claim 1 , the first connection element extending from the semiconductor device ...

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03-01-2019 дата публикации

METHOD OF STICTION PREVENTION BY PATTERNED ANTI-STICTION LAYER

Номер: US20190002273A1
Принадлежит:

The present disclosure relates to a MEMS apparatus with a patterned anti-stiction layer, and an associated method of formation. The MEMS apparatus has a handle substrate defining a first bonding face and a MEMS substrate having a MEMS device and defining a second bonding face. The handle substrate is bonded to the MEMS substrate through a bonding interface with the first bonding face toward the second bonding face. An anti-stiction layer is arranged between the first and the second bonding faces without residing over the bonding interface. 1. A microelectromechanical systems (MEMS) apparatus comprising:a handle substrate defining a first bonding face;a MEMS substrate having a MEMS device and defining a second bonding face, the handle substrate being bonded to the MEMS substrate through a bonding interface with the first bonding face toward the second bonding face; andan anti-stiction layer arranged between the first and the second bonding faces without residing over the bonding interface.2. The MEMS apparatus of claim 1 , wherein the handle substrate comprises a handle feature associated with the MEMS device claim 1 , wherein the anti-stiction layer is arranged on one or more of a MEMS-facing surface and one or more sidewalls of the handle feature.3. The MEMS apparatus of claim 1 , wherein the MEMS device comprises a MEMS feature claim 1 , wherein the anti-stiction layer is arranged on one or more surfaces selected from a group consisting of a handle-facing surface of the MEMS substrate and one or more sidewalls of the MEMS feature.4. The MEMS apparatus of claim 1 , wherein the anti-stiction layer is arranged on both of the handle substrate and the MEMS substrate.5. The MEMS apparatus of claim 1 , wherein the anti-stiction layer is associated with one or more predetermined locations of the handle substrate claim 1 , and wherein the one or more predetermined locations comprise one or more bonding locations claim 1 , wherein the handle substrate and MEMS substrate are ...

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03-01-2019 дата публикации

MICROMECHANICAL COMPONENT

Номер: US20190002277A1
Автор: SCHELLING Christoph
Принадлежит:

A micromechanical component, having a carrier wafer having at least one micromechanical structure that is situated in a cavern; a thin-layer cap situated on the carrier wafer, by which the cavern is hermetically sealed; and a cap wafer situated on the thin-layer cap in the region of the cavern having the micromechanical structure, the cap wafer hermetically sealing a region of the thin-layer cap above the cavern. 113-. (canceled)14. A micromechanical component , comprising:a carrier wafer having at least one micromechanical structure that is situated in a cavern;a thin-layer cap situated on the carrier wafer by which the cavern is hermetically sealed; anda cap wafer situated on the thin-layer cap in a region of the cavern having the micromechanical structure, the cap wafer hermetically sealing a region of the thin-layer cap above the cavern.15. The micromechanical component as recited in claim 14 , wherein the cap wafer is a glass cap wafer.16. The micromechanical component as recited in claim 14 , wherein the cap wafer is an ASIC wafer.17. The micromechanical component as recited in claim 14 , wherein the carrier wafer has a buried wiring level in the carrier wafer underneath the micromechanical structure.18. The micromechanical component as recited in claim 14 , wherein two micromechanical structures are in the carrier wafer claim 14 , a respective micromechanical structure being situated in a respective cavern claim 14 , regions above the caverns being hermetically sealed by the cap wafer claim 14 , a fluid duct being formed between a cavern of the cap wafer and a cavern of the carrier wafer.19. The micromechanical component as recited in claim 14 , wherein filled insulating trenches are in the thin-layer cap.20. The micromechanical component as recited in claim 19 , wherein a metallic layer is on the thin-layer cap in a region of the filled insulating trenches.21. The micromechanical component as recited in claim 14 , wherein the micromechanical component is an ...

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04-01-2018 дата публикации

CONTROLLED DEPOSITION OF METAL AND METAL CLUSTER IONS BY SURFACE FIELD PATTERNING IN SOFT-LANDING DEVICES

Номер: US20180002806A1
Принадлежит:

A soft-landing (SL) instrument for depositing ions onto substrates using a laser ablation source is described herein. The instrument of the instant invention is designed with a custom drift tube and a split-ring ion optic for the isolation of selected ions and is capable of operating at atmospheric pressure. The drift tube allows for the separation and thermalization of ions formed after laser ablation through collisions with an inert bath gas that allow the ions to be landed at energies below 1 eV onto substrates. The split-ring ion optic is capable of directing ions toward the detector or a landing substrate for selected components. 1. An apparatus comprising:an ionization region comprising a laser capable of releasing at least one of: metal ions, metal ion clusters, or metal nanoparticles, from a metal;an ion mobility region in communication with the metal comprising a plurality of electrically conductive concentric rings;a soft landing area comprising a surface; anda detector capable of detecting molecules, clusters or nanoparticles that land on the surface of the soft landing area.2. The apparatus of claim 1 , further comprising a safety housing to contain the laser or ions.3. The apparatus of claim 1 , wherein the apparatus is capable of operating at atmospheric pressure.4. The apparatus of claim 1 , wherein the ionization region comprises a laser is an incident beam laser claim 1 , a pulsed laser claim 1 , a Nd:YAG laser.5. The apparatus of claim 1 , wherein the metal is silver claim 1 , gold claim 1 , molybdenum claim 1 , or nickel.6. The apparatus of claim 1 , wherein the apparatus is equipped to deposit the metal generated by laser ablation claim 1 , vacuum hardware claim 1 , and a manipulator for detector coverage.7. The apparatus of claim 1 , wherein a noble gas is introduced into at least one of: the ionization region claim 1 , the ion mobility region or the movable soft landing area.8. The apparatus of claim 1 , wherein the detector is at least one of: ...

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