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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 5528. Отображено 100.
26-04-2012 дата публикации

HEAVILY DOPED PbSe WITH HIGH THERMOELECTRIC PERFORMANCE

Номер: US20120097906A1
Автор: G. Jeffrey Snyder, Heng Wang, Yanzhong Pei
Принадлежит: California Institute of Technology CalTech

The present invention discloses heavily doped PbSe with high thermoelectric performance. Thermoelectric property measurements disclosed herein indicated that PbSe is high zT material for mid-to-high temperature thermoelectric applications. At 850 K a peak zT>1.3 was observed when n H ˜1.0×10 20 cm −3 . The present invention also discloses that a number of strategies used to improve zT of PbTe, such as alloying with other elements, nanostructuring and band modification may also be used to further improve zT in PbSe.

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Номер записи: 1
07-06-2012 дата публикации

SYNTHESIS OF MULTINARY CHALCOGENIDE NANOPARTICLES COMPRISING Cu, Zn, Sn, S, AND Se

Номер: US20120138866A1
Автор: Hugh W. Hillhouse, Qijie Guo, Rakesh Agrawal
Принадлежит: PURDUE RESEARCH FOUNDATION

Nanoparticle compositions and methods for synthesizing multinary chalcogenide CZTSSe nanoparticles containing Cu, Zn, and Sn in combination with S, Se or both are described. The nanoparticles may be incorporated into one or more ink solutions alone or in combination with other chalcogenide-based particles to make thin films useful for photovoltaic applications, including thin films from multilayer particle films having a composition profile. The composition and stoichiometry of the thin films may be further modified by subjecting the particle films to gas or liquid phase chalcogen exchange reactions.

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Номер записи: 2
28-06-2012 дата публикации

Affecting the thermoelectric figure of merit (zt) and the power factor by high pressure, high temperature sintering

Номер: US20120161084A1
Автор: Abds-Sami Malik, Francis J. DiSalvo, Yongkwan Dong
Принадлежит: Diamond Innovations Inc

A method for increasing the ZT of a semiconductor, involves creating a reaction cell including a semiconductor in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the semiconductor, and recovering the semiconductor with an increased ZT.

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Номер записи: 3
19-07-2012 дата публикации

Methods Of Forming A Tellurium Alkoxide And Methods Of Forming A Mixed Halide-Alkoxide Of Tellurium

Номер: US20120184781A1
Автор: Stefan Uhlenbrock
Принадлежит: Micron Technology Inc

A method of forming a tellurium alkoxide includes providing a tellurium halide and a non-tellurium alkoxide in a liquid organic solvent. The liquid organic solvent has less moles of alcohol, if any, than moles of tellurium halide in the liquid organic solvent. The tellurium halide and the non-tellurium alkoxide within the liquid organic solvent are reacted to form a reaction product halide and a tellurium alkoxide. The liquid organic solvent is removed from the reaction product halide and the tellurium alkoxide to leave a liquid and/or solid mixture comprising the reaction product halide and the tellurium alkoxide. The mixture is heated effective to gasify the tellurium alkoxide from the reaction product halide. Other implementations are disclosed, including methods of forming a mixed halide-alkoxide of tellurium.

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Номер записи: 4
23-08-2012 дата публикации

Thermoelectric conversion material and its manufacturing method, and thermoelectric conversion device using the same

Номер: US20120211045A1
Автор: Cheol-Hee Park, Se-Hui Sohn, Seung-Tae Hong, Tae-hoon Kim, Won-Jong Kwon
Принадлежит: LG Chem Ltd

Disclosed is a new thermoelectric conversion material represented by the chemical formula 1: Bi 1-x Cu 1-y O 1-z Te, where 0≦x<1, 0≦y<1, 0≦z<1 and x+y+z>0. A thermoelectric conversion device using said thermoelectric conversion material has good energy conversion efficiency.

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Номер записи: 5
08-11-2012 дата публикации

Nanoparticles having reduced ligand spheres

Номер: US20120283462A1
Автор: Frank Stefan Riehle, Gerald Urban, Michael Krüger, Yunfei Zhou
Принадлежит: Bayer Intellectual Property GmbH

The invention relates to the technical field of nanoparticles. The subject matter of the invention is a method for treating nanoparticles for the reduction of ligand spheres.

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Номер записи: 6
13-12-2012 дата публикации

HYDRAZINE-COORDINATED Cu CHALCOGENIDE COMPLEX AND METHOD OF PRODUCING THE SAME

Номер: US20120315210A1
Автор: Hidenori Miyamoto, Koichi Misumi, Masaru Kuwahara
Принадлежит: Tokyo Ohka Kogyo Co Ltd

A hydrazine-coordinated Cu chalcogenide complex obtainable by reacting Cu or Cu 2 Se and a chalcogen in dimethylsulfoxide in the presence of hydrazine and free of an amine solvent, and adding a poor solvent to the resulting solution or subjecting the resulting solution to concentration and filtration; and a method of producing a hydrazine-coordinated Cu chalcogenide complex, including reacting Cu or Cu 2 Se and a chalcogen in dimethylsulfoxide in the presence of hydrazine and free of an amine solvent, and adding a poor solvent to the resulting solution or subjecting the resulting solution to concentration and filtration.

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Номер записи: 7
10-01-2013 дата публикации

New compound semiconductors and their application

Номер: US20130009107A1
Автор: Cheol-Hee Park, Tae-hoon Kim
Принадлежит: LG Chem Ltd

Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: In x Co 4 Sb 12-n-z Q′ n Se z , where Q′ is at least one selected from the group consisting of O and S, 0<x≦0.5, 0<n≦2 and 0≦z<2.

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Номер записи: 8
10-01-2013 дата публикации

New compound semiconductors and their application

Номер: US20130009108A1
Автор: Cheol-Hee Park, Tae-hoon Kim
Принадлежит: LG Chem Ltd

Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: In x M y Co 4-m-a A m Sb 12-n-z-b X n Te z , where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; 0<x<1; 0<y<1; 0≦m≦1; 0≦n<9; 0<z≦2; 0≦a≦1; 0<b≦3; and 0<n+z+b<12.

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Номер записи: 9
10-01-2013 дата публикации

Compound semiconductors and their application

Номер: US20130009116A1
Автор: Cheol-Hee Park, Tae-hoon Kim
Принадлежит: LG Chem Ltd

Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: In x Co 4-a Sb 12-z Q z , where Q is at least one selected from the group consisting of O, S, Se and Te, 0<x≦0.5, 0<a≦1 and 0≦z≦4.

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Номер записи: 10
10-01-2013 дата публикации

New compound semiconductors and their application

Номер: US20130009117A1
Автор: Cheol-Hee Park, Tae-hoon Kim
Принадлежит: LG Chem Ltd

Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: In x Co 4 Sb 12-z Se z , where 0<x≦0.5 and 0<z≦2.

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Номер записи: 11
07-03-2013 дата публикации

Metal Oxide Semiconductor Films, Structures, and Methods

Номер: US20130056691A1
Автор: Henry W. White, Tae-Seok Lee, Yungryel Ryu
Принадлежит: Moxtronics Inc

Materials and structures for improving the performance of semiconductor devices include ZnBeO alloy materials, ZnCdOSe alloy materials, ZnBeO alloy materials that may contain Mg for lattice matching purposes, and BeO material. The atomic fraction x of Be in the ZnBeO alloy system, namely, Zn 1-x Be x O, can be varied to increase the energy band gap of ZnO to values larger than that of ZnO. The atomic fraction y of Cd and the atomic fraction z of Se in the ZnCdOSe alloy system, namely, Zn 1-y Cd y O 1-z Se z , can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped, or p-type or n-type doped, by use of selected dopant elements.

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Номер записи: 12
25-04-2013 дата публикации

Semiconductor nanocrystal-polymer composite, method of preparing the same, and composite film and optoelectronic device including the same

Номер: US20130099213A1
Автор: Eun Joo Jang, Hyo Sook JANG, Hyun A Kang, Shin Ae Jun, Soo Kyung Kwon
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal, a polymer comprising a plurality of carboxylate anion groups (—COO − ) bindable to a surface of the semiconductor nanocrystal, and a metal cation bindable to a carboxylate anion group of the plurality of carboxylate anion groups.

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Номер записи: 13
25-04-2013 дата публикации

METHOD OF FORMING PHASE CHANGE MATERIAL LAYER USING GE(II) SOURCE, AND METHOD OF FABRICATING PHASE CHANGE MEMORY DEVICE

Номер: US20130101491A1
Автор: Bae Byoung-Jae, Cho Sung-Lae, Kim Do-Hyung, Lee Jin-Il, Park Hye-Young
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NRRR, where R, Rand Rare each independently at least one selected from the group consisting of H, CH, CH, CH, CH, Si(CH), NH, NH(CH), N(CH), NH(CH) and N(CH). 1. A method of forming a phase change material layer , the method comprising:supplying a reaction gas including the composition of Formula 1 into a reaction chamber; andsupplying at least a first source which includes Ge(II) into the reaction chamber; {'br': None, 'sub': 1', '2', '3, 'NRRR\u2003\u2003Formula 1'}, 'wherein a start of supplying the reaction gas into the reaction chamber occurs after supplying of the first source into the reaction chamber is stopped;'}{'sub': 1', '2', '3', '3', '2', '5', '3', '7', '4', '9', '3', '3', '2', '3', '3', '2', '2', '5', '2', '5', '2, 'wherein R, Rand Rare each independently at least one selected from the group consisting of H, CH, CH, CH, CH, Si(CH), NH, NH(CH), N(CH), NH(CH) and N(CH).'}2. The method according to claim 1 , further comprising: supplying a second source wherein the reaction gas is not supplied to the reaction chamber during supplying the second source into the reaction chamber.3. The method according to claim 2 , wherein supplying of the first source and supplying of the second source are at least partially overlapped.4. The method according to claim 2 , wherein supplying of the second source occurs after supplying of the first source is stopped and before supplying of the reaction gas starts.5. The method according to claim 2 , wherein supplying the reaction gas occurs after supplying of the first source is stopped and before supplying the second source starts.6. The method according to claim 1 , wherein the first source ...

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Номер записи: 14
23-05-2013 дата публикации

Tellurium (Te) Precursors for Making Phase Change Memory Materials

Номер: US20130129603A1
Автор: Gaffney Thomas Richard, Xiao Manchao
Принадлежит: AIR PRODUCTS AND CHEMICALS, INC.

Tellurium (Te)-containing precursors, Te containing chalcogenide phase change materials are disclosed in the specification. A method of making Te containing chalcogenide phase change materials using ALD, CVD or cyclic CVD process is also disclosed in the specification in which at least one of the disclosed tellurium (Te)-containing precursors is introduced to the process. 2. The process of claim 1 , wherein the organotellurol is selected from the group consisting of N-Butyltellurol-D and T-Butyltellurol-D.3. The process of claim 1 , wherein the process further comprising a step of introducing hydrogen or hydrogen plasma after each step of depositing; or after all three steps of depositing.4. The process of claim 1 , wherein at least two depositing steps are carried out concurrently.5. The process of claim 1 , wherein the depositing is carried out by a process selected from the group consisting of ALD claim 1 , CVD claim 1 , and cyclic CVD process.6. The process of claim 2 , wherein the depositing is carried out by a process selected from the group consisting of ALD claim 2 , CVD claim 2 , and cyclic CVD process.7. A Te containing chalcogenide phase change material synthesized by the process of .8. A Te containing chalcogenide phase change material synthesized by the process of .10. The process of claim 9 , wherein the process further comprising a step of introducing hydrogen or hydrogen plasma after each step of depositing.11. The process of claim 9 , wherein the process further comprising a step of introducing hydrogen or hydrogen plasma after the three steps of depositing.12. The process of claim 9 , wherein at least two depositing steps are carried out concurrently.13. The process of claim 9 , wherein the depositing is carried out by a process selected from the group consisting of ALD claim 9 , CVD claim 9 , and cyclic CVD process.14. A Te containing chalcogenide phase change material synthesized by the process of .16. The process of claim 15 , wherein the ...

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Номер записи: 15
13-06-2013 дата публикации

METHOD OF PRODUCING PHARMACOLOGICALLY PURE CRYSTALS

Номер: US20130149232A1
Автор: Kottwitz Ortwin, Stiefel Thomas
Принадлежит: BIOSYN ARZNEIMITTEL GMBH

The present invention relates to means and methods for producing crystals or crystalline substances. In particular, crystals or crystalline substances which are useful as pharmaceutical ingredients can be manufactured. 1. A process for manufacturing a crystalline substance comprising the steps ofa) delivering an unsaturated solution of the substance to be crystallized into a fluidized bed dryer, under pressure and temperature conditions of applying a vacuum and maintaining a temperature range, in order to dry the solution of a substance to be crystallized to thereby obtain a supersaturated solution, in which crystallization takes place, andb) applying vacuum and maintaining a temperature range in the fluidized bed dryer after completion of the step of delivering the unsaturated solution of the substance to be crystallized, wherein the vacuum and the temperature are regulated in a manner in order to obtain the desired crystalline product as a homogenous product.2. The process of claim 1 , wherein the method does not contain a step of adding a seed crystal.3. The process of claim 1 , wherein in step a) the unsaturated solution is delivered by spraying claim 1 , pumping or sprinkling.4. The process of claim 1 , wherein the unsaturated solution of the substance to be crystallized is delivered into a fluidized bed dryer claim 1 , which is a mechanically created fluidized bed dryer claim 1 , wherein the crystallization takes place under mechanical agitation.5. The process of claim 1 , wherein the crystalline substance is an inorganic or organic salt.6. The process of claim 1 , wherein the temperature and/or vacuum are controlled in step a) and b).7. The process of claim 6 , wherein the temperature and/or vacuum are controlled in step a) and b) in order to avoid sticking of dry substance to the surface of the fluidized bed dryer.8. The process of claim 1 , further comprisingc) adding an amount of free solvent into the fluidized bed dryer, and/ord) regulating pressure and ...

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Номер записи: 16
18-07-2013 дата публикации

METHODS OF PRODUCING CADMIUM SELENIDE MULTI-POD NANOCRYSTALS

Номер: US20130183442A1
Автор: Zhang Wenjin, Zhong Xinhua
Принадлежит: EAST CHINA UNIVERSITY OF SCIENCE AND TECHNOLOGY

A detecting device for assembly position of vehicle body side walls includes a first detecting device for location surface of front position and/or a second detecting device for location surface of reverse position. The first detecting device includes two first rules (22) and a front detecting sample (21), of which the top surface (27) is flat, and the lower surface (26) is a measuring surface. The two first rules (22) are arranged at the both ends of sides of the front detecting sample (21). The first rules (22) are perpendicular to the top surface (27) of the front detecting sample (21). The second detecting device includes two second rulers (32) and a reverse detecting sample (31), of which the top surface (37) is flat, and the lower (36) surface is a measuring surface. The two second rules (32) are arranged at the both ends of sides of the reverse detecting sample (31). The detecting device can detect and adjust the transverse deflection, longitudinal linearity and tortuosity of one of the location surfaces in the assembly positions better, thus avoiding the accumulating error in detecting in the prior art. A detecting method for assembly position of vehicle body side walls is provided. 1. A method of producing a semiconductor nanocrystal , the method comprising:degassing a mixture comprising a first inorganic compound, a second inorganic compound, a ligand, and a carboxylic acid in a non-coordinating solvent at a temperature of about 20° C. to about 120° C.,wherein the first inorganic compound comprises a period II to period VI element and the second inorganic compound comprises a period IV to period VI element;heating the mixture to elevate the temperature of the mixture from the degassing temperature to a temperature of about 160° C. to about 300° C. to produce the semiconductor nanocrystal, andwherein the semiconductor nanocrystal comprises a multi-podal semiconductor nanocrystal.26.-. (canceled)7. The method of claim 1 , wherein the semiconductor ...

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Номер записи: 17
08-08-2013 дата публикации

Hybrid particles and associated methods

Номер: US20130200313A1
Автор: Chivin Sun, Joshua J. Pak, René Rodríguez, Robert V. Fox
Принадлежит: Battelle Energy Alliance Llc

Hybrid particles that comprise a coating surrounding a chalcopyrite material, the coating comprising a metal, a semiconductive material, or a polymer; a core comprising a chalcopyrite material and a shell comprising a functionalized chalcopyrite material, the shell enveloping the core; or a reaction product of a chalcopyrite material and at least one of a reagent, heat, and radiation. Methods of forming the hybrid particles are also disclosed.

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Номер записи: 18
12-09-2013 дата публикации

Methods of Synthesizing Thermoelectric Materials

Номер: US20130234375A1
Автор: Bo Yu, Gang Chen, Hengzhi Wang, HUI Wang, Shuo Chen, Wei-Shu Liu, Zhifeng Ren
Принадлежит: Bo Yu, Gang Chen, Hengzhi Wang, HUI Wang, Shuo Chen, Wei-Shu Liu, Zhifeng Ren

Methods for synthesis of thermoelectric materials are disclosed. In some embodiments, a method of fabricating a thermoelectric material includes generating a plurality of nanoparticles from a starting material comprising one or more chalcogens and one or more transition metals; and consolidating the nanoparticles under elevated pressure and temperature, wherein the nanoparticles are heated and cooled at a controlled rate.

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Номер записи: 19
12-09-2013 дата публикации

BROAD-EMISSION NANOCRYSTALS AND METHODS OF MAKING AND USING SAME

Номер: US20130236388A1
Автор: Bowers Michael J., McBride James R., Rosenthal Sandra J.
Принадлежит:

In one aspect, the invention relates to an inorganic nanoparticle or nanocrystal, also referred to as a quantum dot, capable of emitting white light. In a further aspect, the invention relates to an inorganic nanoparticle capable of absorbing energy from a first electromagnetic region and capable of emitting light in a second electromagnetic region, wherein the second electromagnetic region comprises an at least about 50 nm wide band of wavelengths and to methods for the preparation thereof. In further aspects, the invention relates to a frequency converter, a light emitting diode device, a modified fluorescent light source, an electroluminescent device, and an energy cascade system comprising the nanoparticle of the invention. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention. 1. A method of preparing an inorganic nanoparticle comprising the steps of:{'sub': 8', '20, 'a) heating a reaction mixture comprising a Cto Calkyl- or arylphosphonic acid and a source of cadmium or zinc to a temperature of greater than about 300° C.;'}{'sub': 2', '10, 'b) adding to the reaction mixture an injection mixture comprising a Cto Ctrialkyl- or triarylphosphine and a source of selenium, sulfur, or tellurium; and'}c) decreasing the temperature of the reaction mixture to less than about 300° C.2. The method of claim 1 , wherein the reaction mixture further comprises at least one of a Cto Ctrialkyl- or triarylphosphine oxide claim 1 , or a Cto Calkylamine or arylamine claim 1 , or a mixture thereof.3. The method of claim 1 , wherein the injection mixture further comprises a Cto Chydrocarbon.4. The method of claim 1 , further comprising the step of adding a solvent to the reaction mixture so as to decrease the temperature of the reaction mixture to less than about 250° C.5. The method of claim 1 , wherein the source of cadmium or zinc comprises cadmium oxide.6. The method of claim 1 , ...

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Номер записи: 20
26-09-2013 дата публикации

Selenium recovery from bioreactor sludge

Номер: US20130248443A1
Автор: Hong Zhou, Jie Guan, Jungang Zhang, Minggang She, Oijia Fu, Weiqing Xu, Yan Jin, Yanping Liu
Принадлежит: General Electric Co

Wastewater, for example flue gas desulphurization blowdown water, containing soluble selenium is treated in a bioreactor. Microorganisms in the reactor reduce the selenium to elemental selenium, which is insoluble. The elemental selenium is discharged from the reactor in waste sludge also comprising biomass and other suspended solids. Non-microbial suspended solids are removed by way of acid dissolution followed by de-watering. The remaining sludge is burned at a temperature below the selenium oxidation temperature to remove biomass while leaving selenium particles behind.

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Номер записи: 21
03-10-2013 дата публикации

BIOCHEMICAL PROCESS FOR SELENIUM RECOVERY FROM BIOREMEDIATION EFFLUENT OR SLUDGE

Номер: US20130260444A1
Автор: Huang Yan, Jin Yan, Xu Weiqing
Принадлежит:

Wastewater containing selenium in a soluble form is treated in a bioreactor. Microorganisms in the reactor reduce the selenium to elemental selenium, which is insoluble. The elemental selenium is discharged from the reactor in waste sludge. The waste sludge is thickened and then treated with a cell lysis reagent to break down or dissolve micro-organism cells in the sludge. After lysis, the sludge is treated to physically separate out the remaining solids, which includes elemental selenium, for reuse. 1. A process for recovering an insoluble element such as selenium , a rare earth or a heavy metal from a bioremediation sludge or effluent , the sludge or effluent comprising the insoluble element and microorganisms capable of reducing soluble forms of the insoluble element , the process comprising steps of ,a) mixing a cell lysis reagent into the sludge or effluent;b) physically separating particles of the insoluble element from lysed cells of the sludge or effluent.2. The process of wherein the cell lysis reagent comprises an enzyme.3. The process of wherein the sludge or effluent is maintained generally at its ambient pH during step a).4. The process of wherein step b) comprises passing the sludge or effluent through a centrifuge.5. A process for treating a wastewater comprising soluble forms of selenium comprising the steps of claim 1 ,a) treating the wastewater in a bioreactor containing selenium reducing microorganisms;b) withdrawing a sludge comprising particles of elemental selenium and microorganisms from the reactor;c) disintegrating cells of the microorganisms; and,d) passing the sludge through a solid-liquid separation device to remove at least some of the particles of elemental selenium from the remainder of the sludge.6. The process of wherein at least a portion of the sludge remaining after step d) is recycled to claim 5 , or upstream of claim 5 , the bioreactor.7. The process of wherein step c) comprises adding a cell lysis reagent to the sludge.8. The ...

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Номер записи: 22
17-10-2013 дата публикации

Conductive Thick Film Paste For Solar Cell Contacts

Номер: US20130269772A1
Автор: Lei Wang, Matthias HÖRTEIS, Weiming Zhang
Принадлежит: Heraeus Precious Metals North America Conshohocken LLC

The present invention relates to an inorganic reaction system used in the manufacture of electroconductive pastes. The inorganic reaction system comprises a lead containing matrix forming composition and a tellurium oxide additive. Preferably the lead containing matrix forming composition is between 5-95 wt. % of the inorganic reaction system, and the tellurium oxide additive is between 5-95 wt. % of the inorganic reaction system. The lead containing matrix forming composition may be a glass frit, and may comprise lead oxide. Another aspect of the present invention relates to an electroconductive paste composition that comprises metallic particles, an inorganic reaction system as previously disclosed, and an organic vehicle. Another aspect of the present invention relates to an organic vehicle that comprises one or more of a binder, a surfactant, a solvent, and a thixatropic agent. Another aspect of the present invention relates to a solar cell printed with an electroconductive paste composition as disclosed, as well as an assembled solar cell module. Another aspect of the present invention relates to a method of producing a solar cell.

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Номер записи: 23
14-11-2013 дата публикации

Power factor enhanced thermoelectric material and method of producing same

Номер: US20130299754A1
Автор: Byung Ki RYU, Kyung Han AHN, Sang Il Kim, Sung Woo Hwang
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A thermoelectric material including a compound represented by Chemical Formula 1 M x Cu y Bi 2-x (Te 1-z Se z ) 3   (1) wherein in the Chemical Formula, M is at least one metal element, and x, y, and z independently satisfy the following ranges 0<x≦0.1, 0<y≦0.05, and 0≦z≦0.5.

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Номер записи: 24
14-11-2013 дата публикации

GAMMA RADIATION SOURCE

Номер: US20130302236A1
Автор: III John J., MUNRO, SCHEHR Kevin J.
Принадлежит:

A gamma radiation source comprises Selenium wherein the Selenium is provided in the form of compounds, alloys or mixtures with one or more nonmetals which upon irradiation do not produce products capable of sustained emission of radiation which would unacceptably interfere with the gamma radiation of Selenium. A further gamma radiation source comprises Selenium wherein the Selenium is provided in the form of compounds, alloys or mixtures with one or more metals or nonmetals, the neutron irradiation of which does produce products capable of sustained emission of radiation which would acceptably complement the gamma radiation of Selenium. Further, the gamma radiation source may have components that are separately irradiated before being combined and the components may be of natural isotopic composition or of isotopically modified composition so that the subsequent radiation peaks may also be adjusted in relative frequency. 1. A gamma radiation source comprising: Selenium or a precursor thereof , wherein the Selenium is provided in the form of one or more thermally stable compounds or mixtures , and with one or more nonmetals the neutron irradiation of which does not produce products capable of sustained emission of radiation which would unacceptably interfere with the gamma radiation of Selenium.2. A gamma radiation source as defined in claim 1 , wherein the one or more nonmetals may comprise a natural isotopic composition claim 1 , an enriched isotopic composition claim 1 , or a depleted isotopic composition.3. A gamma radiation source as defined in claim 2 , wherein the gamma radiation peaks of the composition may be adjusted in relative frequency.4. The gamma radiation source as defined in claim 1 , wherein said one or more nonmetals comprises Germanium or Silicon.5. The gamma radiation source as defined in claim 3 , wherein said one or more nonmetals comprises Ge or Si.6. A gamma radiation source comprising: Selenium or a precursor thereof claim 3 , wherein the ...

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Номер записи: 25
19-12-2013 дата публикации

AL-SB-TE PHASE CHANGE MATERIAL USED FOR PHASE CHANGE MEMORY AND FABRICATION METHOD THEREOF

Номер: US20130334469A1
Автор: LIU Bo, Peng Cheng, Rao Fang, Song Zhitang, Wu Liangcai, ZHOU Xilin, ZHU Min
Принадлежит:

The present invention discloses an Al—Sb—Te phase change material used for PCM and fabrication method thereof. Said phase change material, which can be prepared by PVD, CVD, ALD, PLD, EBE, and ED, is a mixture of three elements aluminum (Al), antimony (Sb) and tellurium (Te) with a general formula of Al(SbTe), where 0 Подробнее

Номер записи: 26
26-12-2013 дата публикации

Highly efficient method for producing ceramic microparticles

Номер: US20130343979A1
Автор: Daisuke Honda, Jun Kuraki, Masakazu Enomura, Masaki Maekawa
Принадлежит: M Technique Co Ltd

Provided is a more suitable method for producing ceramic microparticles. The present invention uses at least two types of fluids to be processed; at least one of the fluids to be processed is a fluid containing a ceramic starting material liquid that mixes and/or dissolves a ceramic starting material in a basic solvent; of the fluids aside from the ceramic starting material liquid, at least one of the fluids to be processed is a fluid containing a solvent for precipitating ceramic microparticles; and ceramic microparticles are precipitated by mixing the fluid containing the ceramic starting material liquid and the fluid containing the solvent for precipitating ceramic microparticles within a thin film fluid formed between at least two surfaces ( 1,2 ) for processing that are provided facing each other, are able to approach and separate each other, and of which one is able to rotate with respect to the other. Ceramic microparticles having as increased crystallinity are obtained by mixing the fluid containing the precipitated ceramic microparticles precipitate and a fluid containing an acidic substance.

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Номер записи: 27
09-01-2014 дата публикации

Preparation of Nanocrystals for Thermoelectric and Solar Cell Applications Using Sulfide-based Nanocrystal Precursors in Colloidal Systems

Номер: US20140010750A1
Автор: Ballinger Clinton T., Bosak Gregg, Fiske Katie, Nally Luke, Peng Adam Z., Perera Susanthri, Waring Alfred
Принадлежит:

Disclosed herein is a method of synthesizing a nanocrystal. The method can include reacting a bismuth material, an antimony material, and a ligand together with a heat source. The method may also include injecting a sulfur precursor at a predetermined temperature and maintaining the predetermined temperature for a predetermined amount of time to form a plurality of precursor nanocrystals. The precursor nanocrystals may include BiSbSnanocrystals. 1. A method of synthesizing a nanocrystal comprising:reacting a bismuth material, an antimony material, and a ligand together with a heat source;injecting a sulfur precursor at a predetermined temperature; and{'sub': 0.5', '1.5', '3, 'maintaining the predetermined temperature for a predetermined amount of time to form a plurality of precursor nanocrystals, the precursor nanocrystals comprising BiSbSnanocrystals.'}2. The method of claim 1 , wherein the reacting is done under a vacuum claim 1 , an inert gas claim 1 , or a combination thereof.3. The method of claim 1 , wherein the injecting is done at a temperature of approximately 100° C. to approximately 150° C.4. The method of claim 3 , wherein the temperature is approximately 130° C.5. The method of claim 1 , wherein the predetermined amount of time includes approximately 2 minutes to approximately 12 minutes.6. The method of claim 5 , wherein the predetermined amount of time includes approximately 5 minutes.7. The method of claim 1 , further comprising:washing the plurality of precursor nanocrystals.8. The method of claim 1 , further comprising:performing at least one ionic exchange, wherein a Te containing material is added to the plurality of precursor nanocrystals; and{'sub': '3', 'isolating a plurality of BiSbTenanocrystals.'}9. The method of claim 8 , wherein the performing at least one ionic exchange includes:performing a first ionic exchange with a SbBi material; andperforming a second ionic exchange with a SbTe material.10. The method of claim 8 , wherein the ...

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Номер записи: 28
09-01-2014 дата публикации

Group XIII Selenide Nanoparticles

Номер: US20140011317A1
Автор: Gresty Nathalie, Masala Ombretta, Newman Christopher, Pickett Nigel, Whitelegg Stephen
Принадлежит:

A method of preparing Group XIII selenide nanoparticles comprises reacting a Group XIII ion source with a selenol compound. The nanoparticles have an MSesemiconductor core (where M is In or Ga) and an organic capping ligand attached to the core via a carbon-selenium bond. The selenol provides a source of selenium for incorporation into the semiconductor core and also provides the organic capping ligand. The nanoparticles are particularly suitable for solution-based methods of preparing semiconductor films. 1. A method of producing Group XIII selenide nanoparticles , the method comprising:reacting a Group XIII ion precursor with a selenol compound.2. The method of claim 2 , wherein the Group XIII ion precursor is a chloride claim 2 , acetate claim 2 , or acetylacetonate of a Group XIII element.3. The method of claim 1 , wherein the Group XIII ion precursor is selected from the group consisting of InCl claim 1 , In(OAc) claim 1 , In(acac) claim 1 , GaCl claim 1 , Ga(OAc)and Ga(acac).4. The method of claim 1 , wherein the selenol is an alkyl claim 1 , alkenyl claim 1 , alkynyl claim 1 , or aryl selenol.5. The method of claim 1 , wherein the selenol contains 4 to 14 carbon atoms.6. The method of claim 1 , wherein the selenol compound is octane selenol.7. The method of claim 1 , further comprising adding a second selenium compound to the Group XIII ion precursor.8. The method of claim 7 , wherein the second selenium source is a trioctylphosphine selenide.9. The method of claim 1 , wherein the nanoparticles have diameters below about 200 nm.10. The method of claim 1 , wherein the nanoparticles have diameters of about 2 to about 100 nm.11. The method of claim 1 , wherein the nanoparticles have diameters less than about 10 nm.12. Group XIII selenide nanoparticles prepared by a method comprising: reacting a Group XIII ion precursor with a selenol compound.13. A composition comprising: a nanoparticle comprising a core and an organic capping ligand claim 1 , wherein the core ...

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Номер записи: 29
13-02-2014 дата публикации

SYSTEM FOR REMOVING SELENIUM FROM A FEED STREAM

Номер: US20140045248A1
Автор: Wallace Paul Steven
Принадлежит: Enviro Water Minerals Company, Inc.

A system for removing selenium from a solid feed stream includes a selenium dissolver configured to selectively dissolve elemental selenium from the solid feed stream and to produce a selenium rich solution and a crystallizer coupled to the selenium dissolver and configured to receive the selenium rich solution from the dissolver, to add an acid to the selenium rich solution, to remove purified selenium from the selenium rich solution, and to remove sulfur dioxide from the selenium rich solution. 1. A system for removing selenium from a solid feed stream , comprising:a selenium dissolver configured to selectively dissolve elemental selenium from the solid feed stream and to produce a selenium rich solution; anda crystallizer coupled to the selenium dissolver and configured to receive the selenium rich solution from the dissolver, to add an acid to the selenium rich solution, to remove purified selenium from the selenium rich solution, and to remove sulfur dioxide from the selenium rich solution.2. The system of claim 1 , comprising a centrifuge coupled to the crystallizer and configured to receive the purified selenium from the crystallizer.3. The system of claim 2 , comprising a dryer coupled to the centrifuge and configured to receive the purified selenium from the centrifuge and to dry the purified selenium.4. The system of claim 3 , comprising a dust collector system coupled to the dryer and configured to remove particles from air used in the dryer.5. The system of claim 1 , wherein the selenium dissolver is configured to selectively dissolve the elemental selenium from the solid feed stream using a sodium sulfite solution.6. The system of claim 1 , comprising a filtration system disposed between the selenium dissolver and the crystallizer and configured to remove at least one of biosolids claim 1 , heavy metal sulfides claim 1 , bacteria claim 1 , or fines claim 1 , or any combination thereof claim 1 , from the selenium rich solution.7. The system of claim 6 , ...

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Номер записи: 30
20-02-2014 дата публикации

Sodium Iron(II)-Hexacyanoferrate(II) Battery Electrode and Synthesis Method

Номер: US20140050982A1
Автор: Sean Andrew VAIL, Yuhao Lu
Принадлежит: Sharp Laboratories of America Inc

A method is provided for synthesizing sodium iron(II)-hexacyanoferrate(II). A Fe(CN) 6 material is mixed with the first solution and either an anti-oxidant or a reducing agent. The Fe(CN) 6 material may be either ferrocyanide ([Fe(CN) 6 ] 4− ) or ferricyanide ([Fe(CN) 6 ] 3− ). As a result, sodium iron(II)-hexacyanoferrate(II) (Na 1+X Fe[Fe(CN) 6 ] Z .M H 2 O is formed, where X is less than or equal to 1, and where M is in a range between 0 and 7. In one aspect, the first solution including includes A ions, such as alkali metal ions, alkaline earth metal ions, or combinations thereof, resulting in the formation of Na 1+X A Y Fe[Fe(CN) 6 ] Z .M H 2 O, where Y is less than or equal to 1. Also provided are a Na 1+X Fe[Fe(CN) 6 ] Z .M H 2 O battery and Na 1+X Fe[Fe(CN) 6 ] Z .M H 2 O battery electrode.

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Номер записи: 31
02-01-2020 дата публикации

CHALCOGEN-CONTAINING COMPOUND, ITS PREPARATION METHOD AND THERMOELECTRIC ELEMENT COMPRISING THE SAME

Номер: US20200002168A1
Автор: JUNG Myung Jin, KIM Min Kyoung, KO Kyung Moon, MIN Yu Ho, PARK Chee Sung, PARK Cheol Hee
Принадлежит: LG CHEM, LTD.

A chalcogen-containing compound of the following chemical formula which exhibits an excellent thermoelectric performance index (ZT) through an increase in power factor and a decrease in thermal conductivity, a method for preparing the same, and a thermoelectric element including the same: MVSnSbTe, wherein V is vacancy, M is at least one alkali metal, x≥6, and 0 Подробнее

Номер записи: 32
05-01-2017 дата публикации

Tellurium compound nanoparticles, composite nanoparticles, and production methods therefor

Номер: US20170002265A1
Автор: Daisuke OYAMATSU, Kouta SUGIURA, Tatsuya Kameyama, Tsukasa Torimoto, Yujiro ISHIGAMI
Принадлежит: Nagoya University NUC, Nichia Corp

Tellurium compound nanoparticles, including: an element M 1 where M 1 is at least one element selected from Cu, Ag, and Au; an element M 2 where M 2 is at least one element selected from B, Al, Ga, and In; Te; and optionally an element M 3 where M 3 is at least one element selected from Zn, Cd, and Hg; wherein a crystal structure of the tellurium compound nanoparticles is a hexagonal system, the tellurium compound nanoparticles are of a rod shape and have an average short-axis length of 5.5 nm or less, and when irradiated with light at a wavelength in a range of 350 nm to 1,000 nm, the tellurium compound nanoparticles emit photoluminescence having a wavelength longer than the wavelength of the irradiation light.

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Номер записи: 33
01-01-2015 дата публикации

EXFOLIATION OF THERMOELECTRIC MATERIALS AND TRANSITION METAL DICHALCOGENIDES USING IONIC LIQUIDS

Номер: US20150004733A1
Автор: Frazier Rachel M., Guo Lingling, McCrary Parker D., Quan Haiyu, Rogers Robin D., Wang Hung-Ta
Принадлежит:

Disclosed are methods of exfoliating a thermoelectric material, such as bismuth telluride or antimony telluride, using one or more ionic liquids. Also disclosed is the exfoliated thermoelectric material provided by the disclosed methods. Further disclosed are compositions comprising the exfoliated thermoelectric material and methods of making and using the compositions. Additionally disclosed are exfoliated transition metal dichalcogenide compositions, methods of making and using such compositions. 1. A method for making exfoliated two-dimensional sheets of a thermoelectric material or a transition metal dichalcogenide , the method comprising:homogenizing a mixture comprising the thermoelectric material or the transition metal dichalcogenide and at least one ionic liquid to form a homogenous suspension of the two dimensional sheets of the thermoelectric material or the transition metal dichalcogenide in the ionic liquid.2. The method of claim 1 , further comprising extracting the exfoliated two dimensional sheets of the thermoelectric material or the transition metal dichalcogenide from the mixture.3. The method of claim 1 , wherein substantially homogenizing the mixture comprises imparting energy to the mixture.4. The method of claim 1 , wherein substantially homogenizing the mixture comprises sonicating the mixture for a period of time sufficient to exfoliate the thermoelectric material or the transition metal dichalcogenide to form the two dimensional sheets of the thermoelectric material or the transition metal dichalcogenide and substantially homogenize the mixture.5. The method of claim 1 , wherein the two dimensional sheets of the thermoelectric material or the transition metal dichalcogenide are two-dimensional quintuple sheets or a few layer stacks of quintuple sheets.6. The method of claim 1 , wherein the at least one ionic liquid comprises an optionally substituted cation that comprises a stoichiometric or non-stoichiometric mixture of heterocyclic claim ...

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Номер записи: 34
20-01-2022 дата публикации

PHASE-CHANGE MATERIAL AND ASSOCIATED RESISTIVE PHASE-CHANGE MEMORY

Номер: US20220020923A1
Автор: Cyrille Marie-Claire, NAVARRO Gabriele
Принадлежит:

A phase-change material includes germanium Ge, tellurium Te and antimony Sb, including at least 37% germanium Ge, the ratio between the quantity of antimony Sb and the quantity of tellurium Te being between 1.5 and 4. 1. A phase-change material comprising germanium Ge , tellurium Te and antimony Sb , wherein the phase-change material comprises at least 37% germanium Ge and wherein a ratio between a quantity of antimony Sb and a quantity of tellurium Te is comprised between 2.3 and 2.5.2. The phase-change material according to claim 1 , comprising between 37% and 90% germanium Ge.3. The phase-change material according to claim 1 , comprising between 65% and 80% germanium Ge claim 1 , between 15% and 25% antimony Sb and between 5% and 11% tellurium Te.4. The phase-change material according to claim 1 , consisting of germanium Ge claim 1 , tellurium Te claim 1 , and antimony Sb claim 1 , with optionally at least one dopant.5. The phase-change material according to claim 1 , comprising at least one dopant chosen from the following group: nitrogen N claim 1 , carbon C claim 1 , titanium Ti claim 1 , oxygen O claim 1 , phosphorus P claim 1 , arsenic As claim 1 , boron B claim 1 , gallium Ga or silicon Si.6. The phase-change material according to claim 1 , being a stack of layers claim 1 , with each one of the layers having a thickness less than or equal to 10 nm.7. The phase-change material according to claim 6 , wherein the stack comprises a first layer of GeSbTe claim 6 , a second layer of antimony Sb and a third layer of germanium Ge doped with nitrogen N.8. The phase-change material according to claim 6 , wherein the stack of layers comprises a first layer of material comprising germanium Ge claim 6 , antimony Sb and tellurium Te claim 6 , and a second layer of germanium Ge doped with nitrogen N.9. The phase-change material according to claim 1 , being a single layer.11. The resistive phase-change memory according to claim 10 , wherein the active layer claim 10 , ...

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Номер записи: 35
14-01-2016 дата публикации

A Scalable Process for Producing Exfoliated Defect-Free, Non-Oxidised 2-Dimensional Materials in Large Quantities

Номер: US20160009561A1
Автор: Coleman Jonathan, Paton Keith
Принадлежит:

A process for exfoliating untreated 3-dimensional material to produce a 2-dimensional material, said process comprising the steps of mixing the untreated 3-dimensional material in a liquid to provide a mixture; applying shear force to said mixture to exfoliate the 3-dimensional material and produce dispersed exfoliated 2-dimensional material in solution; and removing the shear force applied to said mixture, such that the dispersed exfoliated 2-dimensional material remains free and unaggregated in solution. 1. A process for exfoliating an untreated 3-dimensional layered material to produce a 2-dimensional material , said process comprising the steps of:mixing the untreated 3-dimensional layered material in a liquid to provide a mixture;applying shear force to said mixture to exfoliate the 3-dimensional layered material and produce a dispersed and exfoliated 2-dimensional material in solution; andremoving the shear force applied to said mixture, such that the dispersed exfoliated 2-dimensional material remains free and unaggregated in solution.2. A process according to claim 1 , wherein flakes of 2-dimensional material and unexfoliated 3-dimensional layered material are removed from the solution by low-speed centrifugation claim 1 , gravity settling claim 1 , filtration or flow separation.3. A process according to where the shear force generates a shear rate greater than 1000 s-1.4. A process according to any one of claim 1 , wherein the 2-dimensional material is substantially non-oxidised.5. A process according to claim 1 , further comprising the step of allowing the formation of a thin film layer from said mixture.6. A process according to claim 1 , further comprising the step of allowing the formation of a thin film layer from said mixture and wherein the step of forming the thin film layer is formed by vacuum filtration or accelerated evaporation.7. A process according to claim 1 , wherein the layered material is selected from any 3-dimensional layered compound ...

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Номер записи: 36
08-01-2015 дата публикации

CATHODES AND ELECTROLYTES FOR RECHARGEABLE MAGNESIUM BATTERIES AND METHODS OF MANUFACTURE

Номер: US20150010832A1
Автор: Datta Moni Kanchan, KUMTA PRASHANT N., Manivannan Ayyakkannu, Saha Partha
Принадлежит: University of Pittsburgh - of the Commonwealth System of Higher Education

The invention relates to Chevrel-phase materials and methods of preparing these materials utilizing a precursor approach. The Chevrel-phase materials are useful in assembling electrodes, e.g., cathodes, for use in electrochemical cells, such as rechargeable batteries. The Chevrel-phase materials have a general formula of MoZand the precursors have a general formula of MMoZ. The cathode containing the Chevrel-phase material in accordance with the invention can be combined with a magnesium-containing anode and an electrolyte. 1. An electrochemical cell , comprising:an alkali-metal-containing anode; {'sub': 6', '8', 'x', '6', '8, 'a Chevrel-phase material of a formula MoZderived from a precursor material of a formula MMoZ, wherein M is a metallic element, x is a number from 1 to 4 and Z is a chalcogen with or without a presence of oxygen; and'}, 'a cathode, comprisingan electrolyte.2. The electrochemical cell of claim 1 , wherein the alkali-metal-containing anode comprises magnesium.3. The electrochemical cell of claim 1 , wherein the metallic element is selected from the group consisting of Li claim 1 , Na claim 1 , Mg claim 1 , Ca claim 1 , Sc claim 1 , Cr claim 1 , Mn claim 1 , Fe Co claim 1 , Ni claim 1 , Cu claim 1 , Zn claim 1 , Sr claim 1 , Y claim 1 , Pd claim 1 , Ag claim 1 , Cd claim 1 , In claim 1 , Sn claim 1 , Ba claim 1 , La claim 1 , Pb claim 1 , Ce claim 1 , Pr claim 1 , Nd claim 1 , Sm claim 1 , Eu claim 1 , Gd claim 1 , Tb claim 1 , Dy claim 1 , Ho claim 1 , Er claim 1 , Tm claim 1 , Yb claim 1 , Lu and mixtures thereof.4. The electrochemical cell of claim 1 , wherein the chalcogen Z is selected from chemical elements in Periodic Table Group 16.5. The electrochemical cell of claim 1 , wherein Z is selected from the group consisting of sulfur claim 1 , selenium claim 1 , tellurium and mixtures thereof.4. (canceled)5. (canceled)6. The electrochemical cell of claim 1 , wherein the Chevrel-phase material is of a formula MoSwhich is derived from a ...

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Номер записи: 37
27-01-2022 дата публикации

CORE-SHELL TYPE QUANTUM DOT, PREPARATION METHOD AND USE THEREOF

Номер: US20220025253A9
Автор: ZHANG Aidi
Принадлежит:

The present disclosure relates to a core-shell type quantum dot, comprising a quantum dot core, a light-transmitting inorganic mesoporous material layer on a surface of the quantum dot core, and a filler different from the inorganic mesoporous material in mesopores of the light-transmitting inorganic mesoporous material layer. The present disclosure also relates to the preparation and use of the core-shell type quantum dot core. The quantum dot core is coated with the light-transmitting inorganic mesoporous material and the mesopores of the inorganic mesoporous material are filled with the filler different from the inorganic mesoporous material, and the core-shell type quantum dots thus obtained not only have improved optical stability and chemical stability, but also have adjustable optical properties. 1. A core-shell type quantum dot comprising a quantum dot core , a light-transmitting inorganic mesoporous material layer on a surface of the quantum dot core , and a filler different from the inorganic mesoporous material in mesopores of the light-transmitting inorganic mesoporous material layer.2. The core-shell type quantum dot according to claim 1 , wherein the filler is fixed in the mesopores by chemical bonding.3. The core-shell type quantum dot according to claim 1 , wherein the core-shell type quantum dot further comprises a light-transmitting metal oxide passivation layer on a surface of the light-transmitting inorganic mesoporous material layer away from the quantum dot core.4. The core-shell type quantum dot according to claim 1 , wherein the filler is a fluorescent-responsive substance.5. The core-shell type quantum dot according to claim 4 , wherein the fluorescent responsive substance is one or more substances selected from the group consisting of: a) an upconversion nanoparticle; b) a fluorescent dye; and c) a self-luminous material used in an OLED device not used for a) and b).6. The core-shell type quantum dot according to claim 5 , wherein the ...

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Номер записи: 38
11-01-2018 дата публикации

MICROBIALLY-MEDIATED METHOD FOR SYNTHESIS OF METAL CHALCOGENIDE NANOPARTICLES

Номер: US20180010153A1
Автор: Armstrong Beth L., GRAHAM David E., Ivanov Ilia N., JACOBS Christopher B., Jang Gyoung Gug, JOSHI Pooran C., KIDDER Michelle K., Moon Ji Won, OREMLAND Ronald, PHELPS Tommy Joe
Принадлежит:

A method for producing metal chalcogenide nanoparticles, the method comprising: (i) producing hydrogen chalcogenide-containing vapor from a microbial source, wherein said microbial source comprises: (a) chalcogen-reducing microbes capable of producing hydrogen chalcogenide vapor from a chalcogen-containing source; (b) a culture medium suitable for sustaining said chalcogen-reducing microbes; (c) at least one chalcogen-containing compound that can be converted to hydrogen chalcogenide vapor by said chalcogen-reducing microbes; and (d) at least one nutritive compound that provides donatable electrons to said chalcogen-reducing microbes during consumption of the nutritive compound by said chalcogen-reducing microbes; and (ii) directing said hydrogen chalcogenide-containing vapor into a metal-containing solution comprising a metal salt dissolved in a solvent to produce metal chalcogenide nanoparticles in said solution, wherein said chalcogen is sulfur or selenium, and said chalcogenide is sulfide or selenide, respectively. The invention is also directed to metal chalcogenide nanoparticle compositions produced as above and having distinctive properties. 2. The method of claim 1 , wherein said metal chalcogenide nanoparticles have a secondary particle size of up to or less than 100 nm.3. The method of claim 1 , wherein the metal in said metal salt is one or more metals selected from the group consisting of transition metals and main group metals.4. The method of claim 1 , wherein the metal in said metal salt is one or more metals selected from the group consisting of Zn claim 1 , Cu claim 1 , Sn claim 1 , Cd claim 1 , Fe claim 1 , Ga claim 1 , In claim 1 , Pb claim 1 , and Hg.5. The method of claim 1 , wherein said reducible chalcogen-containing compound is a reducible sulfur-containing or selenium-containing compound and said chalcogen-reducing microbes are sulfur-reducing or selenium-reducing microbes claim 1 , respectively.6. The method of claim 5 , wherein said ...

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Номер записи: 39
10-01-2019 дата публикации

METHOD FOR RECYCLING COPPER INDIUM GALLIUM SELENIUM MATERIALS

Номер: US20190010578A1
Автор: Gao Yongtao, LIU Junfei, Wang Guan, Wu Guofa
Принадлежит: Hanergy New Material Technology Co., Ltd.

A method for recycling copper indium gallium selenium materials comprises the steps of leaching by using sulfuric acid and hydrogen peroxide, reduction of selenium by using sulfur dioxide, separation of copper by using hydrolysis, alkali separation of indium and gallium, replacement of indium, hydrolysis of gallium, and the like. Leaching is carried out by using sulfuric acid in cooperation with hydrogen peroxide, so that the leaching rate is greatly improved, and acid gas pollution is reduced; PH differential copper is separated by using metal ion hydrolysis, so that costs are low; and in addition, alkali separation of gallium is carried out, separation between indium and gallium can be implemented by merely adjusting the PH of a solution, the separation effect is good, the purities of obtained indium and gallium products are high. 1. A method for recovering copper indium gallium selenide material , comprising the following steps:step A, in which the copper indium gallium selenide material is placed in a ball mill for ball milling;step B, in which the ball milled alloy powders obtained in step A are mixed with a diluted concentrated sulfuric acid and heated up, followed by introducing hydrogen peroxide for leaching; after the leaching is completed, the residue is filtered out to give a leachate;step C, in which the leachate is heated up, followed by introducing sulfur dioxide gas to reduce selenium;step D, in which a sodium hydroxide solution is directly added to the solution after selenium removal; the mixture is stirred at ambient temperature and then allowed to stand, followed by drawing the supernatant; gallium hydroxide and indium hydroxide precipitates and a copper sulfate supernatant are obtained by filtration;step E, in which the copper sulfate supernatant is directly evaporated and crystallized to give copper sulphate pentahydrate;step F, in which a sodium hydroxide solution is added to the gallium hydroxide and indium hydroxide precipitates; the mixture ...

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Номер записи: 40
09-01-2020 дата публикации

Wavelength Tuning of ZnSe Quantum Dots Using In3+ Salts as Dopants

Номер: US20200010761A1
Автор: IPPEN Christian, Manders Jesse, PLANTE Ilan Jen-La, TRUSKIER Jonathan
Принадлежит:

The invention pertains to the field of nanotechnology. More particularly, the invention relates to highly luminescent nanostructures, particularly highly luminescent nanostructures comprising an indium-doped ZnSe core and ZnS and/or ZnSe shell layers. The invention also relates to methods of producing such nanostructures. 1. A nanostructure comprising a core surrounded by at least one shell , wherein the core comprises ZnSe and an indium dopant , wherein the at least one shell comprises ZnS , and wherein the emission wavelength of the nanostructure is between about 435 nm and about 500 nm.23.-. (canceled).4. The nanostructure of claim 1 , wherein the core is surrounded by one shell.56.-. (canceled).7. The nanostructure of claim 1 , wherein the nanostructure further comprises a buffer layer between the core and the at least one shell.8. The nanostructure of any one of claim 7 , wherein the buffer layer comprises ZnSe.910.-. (canceled).11. The nanostructure claim 1 , wherein the photoluminescence quantum yield of the nanostructure is between 50% and 90%.12. (canceled).13. The nanostructure of claim 1 , wherein the full width at half-maximum of the nanostructure is between about 10 nm and about 40 nm.14. (canceled).15. The nanostructure of claim 1 , wherein the nanostructure comprises a buffer layer comprising between 2 and 6 monolayers of ZnSe and at least one shell comprising between 3 and 8 monolayers of ZnS.1618.-. (canceled).19. A method of producing a nanocrystal core comprising:(a) admixing a selenium source and at least one ligand to produce a reaction mixture; and(b) contacting the reaction mixture obtained in (a) with a zinc source and at least one indium salt; to provide a nanocrystal core comprising ZnSe and an indium dopant.20. The method of claim 19 , wherein the selenium source in (a) is selected from the group consisting of trioctylphosphine selenide claim 19 , tri(n-butyl)phosphine selenide claim 19 , tri(sec-butyl) phosphine selenide claim 19 , tri( ...

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Номер записи: 41
09-01-2020 дата публикации

RHODOCOCCUS AETHERIVORANS BCP1 AS CELL FACTORY FOR THE PRODUCTION OF INTRACELLULAR TELLURIUM AND/OR SELENIUM NANOSTRUCTURES (NANOPARTICLES OR NANORODS) UNDER AEROBIC CONDITIONS

Номер: US20200010857A1
Автор: ANIKOVSKIY Max, CAPPELLETTI Martina, PIACENZA Elena, PRESENTATO Alessandro, Turner Raymond, ZANNONI Davide
Принадлежит:

The present disclosure relates generally to the production of tellurium and selenium nanostructures in bacteria. The nanostructures are unique in size, shape, length and stability. 1Rhodococcus aetherivorans. A method of producing tellurium nanostructures , comprising: culturing (BCP1) bacteria in a medium comprising tellurite.2. The method of claim 1 , wherein said culturing comprises pre-culturing said bacteria in said medium to generate a pre-culture claim 1 , followed by culturing a portion of said pre-culture in said medium comprising tellurite to form a first culture.3. The method of or further comprising a culturing a portion of said first culture in said medium comprising tellurite to form a second culture.4. The method of one of to claim 1 , wherein said culturing is performed under aerobic conditions.5. The method of any one of to claim 1 , wherein said culturing is performed under aerobic conditions at temperatures 20-40° C..6. The method of any one of to claim 1 , wherein said tellurite comprises TeO claim 1 , HTeO claim 1 , HTeO claim 1 , KTeO claim 1 , or NaTeO.7. The method of any one of to claim 1 , wherein the concentration of said tellurite is between about 0.4 mM (100 μg/ml) to about 2 mM (500 μg/ml).8. The method of one of to claim 1 , wherein said tellurium nanostructures are formed in the shape of uniform nanorods or and not crystals.9. The method of any one of to claim 1 , wherein said tellurium nanostructures are formed in the shape of uniform spherical nanoparticles.10. The method of any one of to claim 1 , wherein said tellurium nanostructures that are formed are stable claim 1 , dispersed and non-aggregated.11. The method of any one of to claim 1 , wherein said tellurium nanorods have a length of about 100 nm to about 1000 nm.12. The method of any one of to claim 1 , further comprising isolating said produced tellurium nanostructures.13. The method of claim 12 , wherein said isolating comprises collecting said BCP1 cells claim 12 , washing ...

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Номер записи: 42
11-01-2018 дата публикации

METHOD FOR FORMING TELLURIUM/TELLURIDE NANOWIRE ARRAYS AND TELLURIUM/TELLURIDE NANOWIRE THERMOELECTRIC DEVICES

Номер: US20180013051A1
Автор: Chou Ting-mao, JAO Yun-Ting, LI Ying-Chun, Lin Zong-Hong
Принадлежит:

A method for forming tellurium/telluride nanowire arrays on a conductive substrate is provided. The method is used for forming tellurium/telluride nanowire thermoelectric materials and producing thermoelectric devices, and the method includes: preparing a conductive substrate; preparing a mixture solution comprising a tellurium precursor and a reducing agent; immersing the conductive substrate into the mixture solution; reacting the tellurium precursor and the reducing agent for forming a plurality of tellurium/telluride nanowires on the conductive substrate; and arranging the tellurium/telluride nanowires for forming tellurium/telluride nanowire arrays. 1. A method for forming tellurium/telluride nanowire arrays on a conductive substrate , wherein the method is used for forming tellurium/telluride nanowire thermoelectric materials and producing thermoelectric devices , the method comprises:preparing a conductive substrate;preparing a mixture solution comprising a tellurium precursor and a reducing agent;immersing the conductive substrate into the mixture solution;reacting the tellurium precursor and the reducing agent for forming a plurality of tellurium/telluride nanowires on the conductive substrate; andarranging the tellurium/telluride nanowires for forming tellurium/telluride nanowire arrays.2. The method of claim 1 , wherein the conductive substrate is rigid or flexible.3. The method of claim 1 , wherein the conductive substrate is fiber shaped claim 1 , thin-film shaped claim 1 , bulk shaped claim 1 , sheet shaped claim 1 , irregularly shaped claim 1 , mesh shaped or porously shaped.4. The method of claim 3 , wherein the conductive substrate is mesh shaped or fiber shaped and comprises crossly arranged substrate units claim 3 , and the tellurium/telluride nanowires are surrounded on a surface of the conductive substrate.5. The method of claim 1 , wherein the conductive substrate has strong reducibility claim 1 , and the conductive substrate is made from ...

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Номер записи: 43
10-01-2019 дата публикации

Technique for Achieving Large-Grain Ag2ZnSn(S,Se)4 Thin Films

Номер: US20190013424A1
Автор: GERSHON TALIA S., Gordon Michael S., LEE YUN SEOG
Принадлежит:

Techniques for increasing grain size in AZTSSe absorber materials are provided. In one aspect, a method for forming an absorber film on a substrate includes: contacting the substrate with an Ag source, a Zn source, a Sn source, and an S source and/or an Se source under conditions sufficient to form the absorber film on the substrate having a target composition of: AgZnSn(S,Se), wherein 1.7 Подробнее

Номер записи: 44
03-02-2022 дата публикации

METHOD FOR MAKING TRANSITION METAL DICHALCOGENIDE CRYSTAL

Номер: US20220033261A1
Автор: FAN SHOU-SHAN, Li Hao, Wu Yang
Принадлежит:

A method for making a transition metal dichalcogenide crystal having a chemical formula represented as MXis provided, wherein M represents a central transition metal element, and X represents a chalcogen element. The method includes providing a MXpolycrystalline powder, a MXseed crystal, and a transport medium. The MXpolycrystalline powder and the transport medium are placed in a first reaction chamber. The first reaction chamber and the MXseed crystal are placed in a second reaction chamber having a source end and a deposition end opposite to the source end. The first reaction chamber is placed at the source end, and the MXseed crystal is placed at the deposition end. 1. A method of making a transition metal dichalcogenide crystal having a chemical formula represented as MX , wherein M represents a central transition metal element , and X represents a chalcogen element , comprising:{'sub': 2', '2, 'providing MXpolycrystalline powder, MXseed crystals, and a transport medium;'}{'sub': '2', 'providing a first reaction chamber defining an opening at one end of the first reaction chamber, wherein the MXpolycrystalline powder and the transport medium are placed in the first reaction chamber; and'}{'sub': 2', '2, 'providing a second reaction chamber comprising a source end and a deposition end opposite to the source end, wherein the first reaction chamber and the MXseed crystals are placed in the second reaction chamber, the first reaction chamber is placed at the source end, and the MXseed crystals are placed at the deposition end.'}2. The method of claim 1 , wherein the MXpolycrystalline powder is obtained by direct solid-state reactions of a mixture of the central transition metal element M and the chalcogen element X.3. The method of claim 1 , wherein the MXseed crystals comprise a plurality of single crystals.4. The method of claim 3 , wherein average sizes of the MXseed crystals are in a range from 500 μm to 1 mm.5. The method of claim 1 , wherein a method for ...

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Номер записи: 45
03-02-2022 дата публикации

Compound and Thermoelectric Conversion Material

Номер: US20220033273A1
Автор: Atsunori DOI, Satoshi Shimano, Yasujiro Taguchi, Yoshinori Tokura
Принадлежит: RIKEN Institute of Physical and Chemical Research, Sumitomo Chemical Co Ltd

A compound containing Sn, Te and Mn, and further containing either one or both of Sb and Bi.

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Номер записи: 46
09-01-2020 дата публикации

COMPOSITE NANOPARTICLE COMPOSITIONS AND ASSEMBLIES

Номер: US20200013939A1
Автор: Carroll David L., DUN Chaochao, HEWITT Corey, SUMMERS Robert
Принадлежит:

Composite nanoparticle compositions and associated nanoparticle assemblies are described herein which, in some embodiments, exhibit enhancements to one or more thermoelectric properties including increases in electrical conductivity and/or Seebeck coefficient and/or decreases in thermal conductivity. In one aspect, a composite nanoparticle composition comprises a semiconductor nanoparticle including a front face and a back face and sidewalls extending between the front and back faces. Metallic nanoparticles are bonded to at least one of the sidewalls establishing a metal-semiconductor junction. 1. A composite nanoparticle composition comprising:a semiconductor nanoparticle including a front face and a back face and sidewalls extending between the front and back faces; andmetallic nanoparticles bonded to at least one of the sidewalls establishing a metal-semiconductor junction.2. The composite nanoparticle of claim 1 , wherein the metallic nanoparticles are bonded to a plurality of the sidewalls establishing multiple metal-semiconductor junctions.3. The composite nanoparticle of claim 1 , wherein a Schottky barrier is established at the metal-semiconductor junction.4. The composite nanoparticle of claim 3 , wherein the Schottky barrier has a height of at least 100 meV.5. The composite nanoparticle of claim 1 , wherein the semiconductor nanoparticles is a chalcogenide.6. The composite nanoparticle of claim 5 , wherein the metallic nanoparticles are formed of one or more transition metals.7. The composite nanoparticle of claim 6 , wherein the one or more transition metals are selected from Groups IVA-VIIIA and Group IB of the Periodic Table.8. The composite nanoparticle of claim 6 , wherein the one or more transition metals are a noble metal.9. The composite nanoparticle of claim 1 , wherein the semiconductor nanoparticle is a platelet.10. The composite nanoparticle of further comprising an interfacial transition region between the semiconductor nanoparticle and ...

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Номер записи: 47
03-02-2022 дата публикации

METHOD FOR PURIFYING AN INORGANIC MATERIAL USING A TUBE HAVING A BEND BETWEEN A FIRST END AND A SECOND END OF THE TUBE

Номер: US20220033993A1
Автор: Kanatzidis Mercouri G., Lin Wenwen
Принадлежит:

Methods for purifying reaction precursors used in the synthesis of inorganic compounds and methods for synthesizing inorganic compounds from the purified precursors are provided. Also provided are methods for purifying the inorganic compounds and methods for crystallizing the inorganic compounds from a melt. γ and X-ray detectors incorporating the crystals of the inorganic compounds are also provided. 1. A method for forming a purified thallium compound , the method comprising:combining: at least one starting oxidized thallium compound or at least two solid starting inorganic precursor materials, wherein at least one of said at least two solid starting inorganic precursor materials comprises oxidized thallium; and a carbon powder in a reaction vessel;sealing the reaction vessel under vacuum;melting the at least one oxidized thallium compound or the at least two solid starting inorganic precursor materials, wherein the carbon from the carbon powder reduces the thallium oxide to form a reduced, thallium compound or a reduced, thallium-containing inorganic precursor material; andsolidifying the melt.2. The method of claim 1 , wherein the at least one starting oxidized thallium compound is combined with the carbon powder and solidifying the melt provides a solid purified thallium compound having a lower oxygen concentration than the starting oxidized thallium compound.3. The method of claim 1 , wherein the purified thallium compound is TlSI claim 1 , TlSBr claim 1 , TlSeI claim 1 , TlHgI claim 1 , TlGaSe claim 1 , TlBr claim 1 , TlAsSe claim 1 , TlAsSe claim 1 , TlInSe claim 1 , TlSnI5 claim 1 , or TlPbI.4. The method of claim 1 , wherein the at least two solid starting inorganic precursor materials are combined with the carbon powder claim 1 , the two or more inorganic precursor materials claim 1 , react to form the thallium compound in the melt claim 1 , and solidifying the melt provides a solid purified thallium compound.5. The method of claim 4 , wherein the two or ...

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Номер записи: 48
18-01-2018 дата публикации

METHOD FOR MAKING SEMIMETAL COMPOUND OF PT

Номер: US20180016700A1
Автор: FAN SHOU-SHAN, Wu Yang, YAN MING-ZHE, ZHANG KE-NAN, ZHOU SHU-YUN
Принадлежит:

The disclosure relates to a method for making semimetal compound of Pt. The semimetal compound is a single crystal material of PtTe. The method comprises: placing pure Pt and pure Te in a reacting chamber as reacting materials; evacuating the reacting chamber to be vacuum less than 10 Pa; heating the reacting chamber to a first temperature from 600 degree Celsius to 800 degree Celsius and keeping for 24 hours to 100 hours; cooling the reacting chamber to a second temperature from 400 degree Celsius to 500 degree Celsius and keeping for 24 hours to 100 hours at a cooling rate from 1 degree Celsius per hour to 10 degree Celsius per hour to obtain a crystal material of PtTe; and separating the excessive reacting materials from the crystal material of PtTe. 1. A method for making semimetal compound of Pt , the method comprising:providing a quartz tube having an open end and a sealed end opposite to the open end;filling quartz slag in the quartz tube so that the quartz slag to form a supporter at the sealed end;filling quartz cotton fiber in the quartz tube so that the quartz cotton fiber to form a filter on the quartz slag;placing pure Pt and pure Te in the quartz tube as reacting materials;evacuating the quartz tube to be vacuum with a pressure lower than 10 Pa;sealing the open end;vertically accommodating the quartz tube in a steel sleeve so that the reacting materials is located at a bottom of the quartz tube and the quartz slag and the quartz cotton fiber are located at a top of the quartz tube;heating the steel sleeve to a first temperature from about 600 degree Celsius to about 800 degree Celsius and keeping the first temperature for a first period from about 24 hours to about 100 hours;{'sub': '2', 'cooling the steel sleeve to a second temperature from 400 degree Celsius to 500 degree Celsius and keeping the second temperature for a second period from about 24 hours to about 100 hours at a cooling rate from about 1 degree Celsius per hour to about 10 degree ...

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Номер записи: 49
18-01-2018 дата публикации

SEMIMETAL COMPOUND OF PT AND METHOD FOR MAKING THE SAME

Номер: US20180016707A1
Автор: FAN SHOU-SHAN, Wu Yang, YAN MING-ZHE, ZHANG KE-NAN, ZHOU SHU-YUN
Принадлежит:

The disclosure relates to a semimetal compound of Pt and a method for making the same. The semimetal compound is a single crystal material of PtTe. The method comprises: providing a PtTepolycrystalline material; placing the PtTepolycrystalline material in a reacting chamber; placing chemical transport medium in the reacting chamber; evacuating the reacting chamber to be vacuum less than 10 Pa; placing the reacting chamber in a temperature gradient, wherein the reacting chamber has a first end in a temperature from 1200 degree Celsius to 1000 degree Celsius and a second end opposite to the first end and in a temperature from 1000 degree Celsius to 900 degree Celsius; and keeping the reacting chamber in the temperature gradient for 10 days to 30 days. 1. A semimetal compound of Pt , wherein the semimetal compound of Pt is single crystal PtTe.2. The semimetal compound of Pt of claim 1 , wherein the single crystal PtTeis type-II Dirac semimetals.3. The semimetal compound of Pt of claim 1 , wherein the single crystal PtTehas tilted Dirac cone.4. The semimetal compound of Pt of claim 1 , wherein the single crystal PtTeexhibits anomalous negative magnetoresistance.5. A method for making semimetal compound of Pt claim 1 , the method comprising:{'sub': '2', 'placing a PtTepolycrystalline material and a chemical transport medium in a reacting chamber;'}evacuating the reacting chamber to be vacuum with a pressure lower than 10 Pa;{'sub': '2', 'placing the reacting chamber in a temperature gradient, wherein the reacting chamber has a first end in a first temperature from about 1200 degree Celsius to about 1000 degree Celsius and a second end opposite to the first end and in a second temperature from about 1000 degree Celsius to about 9000 degree Celsius, and the PtTepolycrystalline material is located at the first end; and'}keeping the reacting chamber in the temperature gradient for 10 days to 30 days.6. The method of claim 5 , wherein the chemical transport medium is selected ...

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Номер записи: 50
17-01-2019 дата публикации

METHOD FOR CATALYTICALLY REDUCING SELENIUM

Номер: US20190016599A1
Автор: GUO Xueyi, Li Dong, TIAN QINGHUA, XU Runze
Принадлежит: CENTRAL SOUTH UNIVERSITY

Provided is a method for catalytically reducing selenium. Hydrogen peroxide is used as a catalyst, and a reducer is added to a hexavalent-selenium-containing solution for reaction so as to reduce the selenium to elemental selenium, wherein the standard oxidation-reduction potential of the reducer is lower than the standard oxidation-reduction potential of the conversion of the hexavalent selenium to elemental selenium. The present method can further reduce a hexavalent-selenium element-containing selenic acid or selenate solution to an elemental selenium product in one step. In the present method, the hydrogen peroxide effectively lowers the descending speed of the reduction potential of the solution while having a catalytic effect, so that the reduction reaction process is carried out gently, thereby effectively preventing the selenium in the solution from overreducing to generate negatively bivalent selenium ions or compounds thereof, and solving problems such as a low recovery rate caused by selenium overreduction. 1. A method for catalytically reducing selenium , wherein hydrogen peroxide is used as a catalyst , and a reducer is added into a hexavalent-selenium-containing solution for reaction so as to reduce the selenium to elemental selenium , in which the solution is a hexavalent-selenium-containing selenic acid or selenate solution , including a hexavalent-selenium-containing solution generated in chemical or metallurgical scientific research or industrial production , and a ratio of a volume of the hydrogen peroxide to a concentration of selenium in the solution is not lower than 10 mL:1 g/L.2. The method according to claim 1 , wherein a standard oxidation-reduction potential of the reducer is lower than a standard oxidation-reduction potential of a conversion of hexavalent selenium to elemental selenium.3. The method according to claim 2 , wherein the reducer is one or more of hydrazine hydrate claim 2 , sulfur dioxide claim 2 , sulfite and sodium ...

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Номер записи: 51
21-01-2021 дата публикации

PREPARATION METHOD FOR QUANTUM DOTS

Номер: US20210017449A1
Автор: CHENG Luling, YANG Yixing
Принадлежит:

The present application discloses a preparation method for quantum dots (QDs). The method includes providing initial QD cores, and mixing the initial QD cores with an organic carboxylic acid to bond the organic carboxylic acid to the surface of the initial QD cores; preparing a shell layer on the surface of the initial QD cores in a shell-growth reaction system containing an organic carboxylic acid; and mixing and heating the solution system, obtained after a completion of shell-layer growth reaction, with an organic amine, an organic phosphine, or a mixed solution of the organic amine and the organic phosphine. 121-. (canceled)22. A preparation method for quantum dots (QDs) , comprising:providing initial QD cores, and mixing the initial QD cores with an organic carboxylic acid to bond the organic carboxylic acid to a surface of the initial QD cores;preparing a shell layer on the surface of the initial QD cores in a shell-growth reaction system containing an organic carboxylic acid; andmixing and heating a solution system, obtained after a completion of shell-layer growth reaction, with an organic amine, an organic phosphine, or a mixed solution of the organic amine and the organic phosphine.231. The method according to claim , wherein a source of the organic carboxylic acid in the shell-growth reaction system includes at least one of:remaining organic carboxylic acid after mixing the initial QD cores with the organic carboxylic acid to bond the organic carboxylic acid to the surface of the initial QD cores; andorganic carboxylic acid added to the shell-growth reaction system during preparation of the shell layer on the surface of the initial QDs.241. The method according to claim , wherein mixing the initial QD cores and the organic carboxylic acid to bond the organic carboxylic acid to the surface of the initial QD cores includes at least one of:mixing the initial QD cores and the organic carboxylic acid according to a mass-molar ratio of 10 mg of the initial QD ...

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Номер записи: 52
18-01-2018 дата публикации

Humic Acid-Based Supercapacitors

Номер: US20180019070A1
Автор: Chai Song-Hai, Jang Bor Z., Zhamu Aruna
Принадлежит: Nanotek Instruments, Inc.

A supercapacitor electrode comprising a mixture of graphene sheets and humic acid, wherein humic acid occupies 0.1% to 99% by weight of the mixture and the graphene sheets are selected from a pristine graphene material having essentially zero % of non-carbon elements, or a non-pristine graphene material having 0.001% to 5% by weight of non-carbon elements wherein said non-pristine graphene is selected from graphene oxide, reduced graphene oxide, graphene fluoride, graphene chloride, graphene bromide, graphene iodide, hydrogenated graphene, nitrogenated graphene, chemically functionalized graphene, or a combination thereof; and wherein said mixture has a specific surface area greater than 500 m/g. 1. A supercapacitor electrode comprising a mixture of graphene sheets and humic acid , wherein said humic acid occupies 0.1% to 99% by weight of the mixture and said graphene sheets are selected from a pristine graphene material having essentially zero % of non-carbon elements , or a non-pristine graphene material having 0.001% to 5% by weight of non-carbon elements wherein said non-pristine graphene is selected from the group consisting of graphene oxide , reduced graphene oxide , graphene fluoride , graphene chloride , graphene bromide , graphene iodide , hydrogenated graphene , nitrogenated graphene , chemically functionalized graphene , and a combination thereof; and wherein said mixture has a specific surface area greater than 500 m/g.2. A supercapacitor electrode comprising humic acid molecules having an oxygen content of 0. 01% to 42% by weight as an electrode active material , wherein said electrode has a specific surface area greater than 500 m/g.3. The supercapacitor electrode of claim 2 , wherein said oxygen content is from 0.01% to 5% by weight.4. The supercapacitor electrode of claim 2 , wherein said electrode comprises multiple particulates that are porous and each particulate is composed of multiple humic acid molecules packed into a spherical or ellipsoidal ...

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Номер записи: 53
17-01-2019 дата публикации

Cu2XSnY4 Nanoparticles

Номер: US20190019906A1
Автор: Gresty Nathalie, Harris James, Masala Ombretta, Newman Christopher, Pickett Nigel, Wylde Laura
Принадлежит:

Materials and methods for preparing CuXSnYnanoparticles, wherein X is Zn, Cd, Hg, Ni, Co, Mn or Fe and Y is S or Se, (CXTY) are disclosed herein. The nanoparticles can be used to make layers for use in thin film photovoltaic (PV) cells. The CXTY materials are prepared by a colloidal synthesis in the presence of labile organo-chalcogens. The organo-chalcogens serves as both a chalcogen source for the nanoparticles and as a capping ligand for the nanoparticles. 1. A method for preparing an absorber layer for a photovoltaic (PV) device , the method comprising: [{'sub': 2', '4, 'a semiconductor nanocrystal having an outer surface, the semiconductor nanocrystal having the formula CuXSnY, where X is Cd, Hg, Ni, Co, Mn, or Fe and Y is S or Se; and'}, 'a surface coating on the outer surface of the semiconductor nanocrystal and consisting of labile organo-chalcogen ligands;, 'dissolving or dispersing a population of nanoparticles in a solvent to form a nanoparticle ink, each nanoparticle comprisingdepositing the nanoparticle ink on a substrate to form a nanoparticle film;annealing the substrate and nanoparticle film at a first temperature for a first time interval; andannealing the substrate and nanoparticle film at a second temperature for a second time interval,wherein the second temperature is higher than the first temperature.2. The method of claim 1 , wherein the solvent is a non-polar solvent.3. The method of claim 1 , wherein the nanoparticle ink is deposited on the substrate by any one of spin-coating claim 1 , slit-coating claim 1 , drop-casting claim 1 , doctor blading claim 1 , and inkjet printing.4. The method of claim 1 , wherein the first temperature is between 260 and 350° C.5. The method of claim 1 , wherein the first time interval is between 3 and 10 minutes.6. The method of claim 1 , wherein the second temperature is between 350 and 440° C.7. The method of claim 1 , wherein the second time interval is between 3 and 10 minutes.8. The method of claim 1 , ...

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Номер записи: 54
17-01-2019 дата публикации

COVER GLASS FOR SOLAR CELL, SOLAR CELL MODULE PROVIDED WITH COVER GLASS FOR SOLAR CELL, AND TRANSPARENT PROTECTIVE FILM

Номер: US20190019910A1
Автор: OKAMURA Isao
Принадлежит:

A provided cover glass for a solar cell panel has excellent transparency, and minimal incidence so-called “glass surface turbidity” due to reactions with components contained in a glass substrate. The cover glass for the solar cell panel comprises: the glass substrate including a surface; and a transparent protective film containing zinc telluride for coating the surface. Particularly, in the cover glass for the solar cell panel, the transparent protective film is preferably formed by bonding the zinc telluride with silica binders. Such a transparent protective film has excellent transparency, and reactions of the contained zinc telluride inhibit the surface of the glass substrate, which is a base of the solar cell, from becoming turbid. 1. A cover glass for a solar cell , the cover glass comprising:a glass substrate including a surface; anda transparent protective film containing zinc telluride for coating the surface, the transparent protective film is formed by coating a coating liquid containing zinc telluride on a surface of a glass substrate; and', 'a pH of the coating liquid is not less than nine., 'wherein2. The cover glass as defined in claim 1 , wherein said transparent protective film is formed by bonding the zinc telluride with silica binders.3. The cover glass as defined in claim 1 , wherein said transparent protective film contains titanium oxide.4. The cover glass as defined in claim 1 , wherein said transparent protective film has thickness of 20-1200 nanometers.5. The cover glass as defined in claim 1 , wherein said glass substrate contains elements belonging to at least one of alkali metal and alkaline earth metal.6. A solar cell module claim 1 , including the cover glass as defined in .7. A transparent protective film containing zinc telluride claim 1 ,wherein:the transparent protective film is formed by coating a coating liquid containing zinc telluride on a surface of a glass substrate; anda pH of the coating liquid is not less than nine.8. The ...

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Номер записи: 55
10-02-2022 дата публикации

PROCESS FOR THE CONTINUOUS PRODUCTION OF SUB-MICRON TWO-DIMENSIONAL MATERIALS SUCH AS GRAPHENE

Номер: US20220040600A1
Автор: Glasgow Lee, Ladislaus Paul
Принадлежит:

A system and a method of continuously separating submicron thickness laminar solid particles from a solid suspension, segregating the suspension into a submicron thickness particle fraction suspension and a residual particle fraction suspension, the method comprising the steps of; providing a continuous centrifuge apparatus; providing a suspension of submicron thickness laminar solid particles in a solid suspension; wherein the solid suspension comprises the submicron thickness solid particles in a liquid continuous phase; separating the solid suspension in the apparatus. 1. A method of continuously separating a solid suspension containing submicron thickness laminar solid particles into a submicron thickness particle fraction suspension and a residual particle fraction suspension , the method comprising the steps of:providing a continuous centrifuge apparatus;providing a solid suspension of submicron thickness laminar solid particles; 'wherein the solid suspension comprises the submicron thickness laminar solid particles in a liquid continuous phase.', 'separating the solid suspension in the apparatus;'}2. The method of wherein the continuous centrifuge apparatus is a disc stack centrifuge.3. The method of claim 1 , wherein the submicron scale laminar solid particles comprise particles of a material having a crystalline structure comprising atomically thin layers claim 1 , which have been partially delaminated into atomically thin nano-platelets.4. The method of claim 1 , wherein the submicron laminar solid particles comprise particles of partially delaminated graphite claim 1 , hexagonal boron nitride claim 1 , molybdenum disulphide claim 1 , tungsten diselenide or other transition metal dichalcogenides.5. The method of claim 1 , wherein the submicron laminar solid particles comprise particles of partially delaminated graphite or hexagonal boron nitride.6. The method of claim 1 , wherein the submicron laminar solid particles comprise particles of partially ...

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Номер записи: 56
26-01-2017 дата публикации

Preparation of Nanoparticle Materials

Номер: US20170022627A1
Автор: "OBrien Paul", Pickett Nigel
Принадлежит:

A method of producing nanoparticles comprises effecting conversion of a molecular cluster compound to the material of the nanoparticles. The molecular cluster compound comprises a first ion and a second ion to be incorporated into the growing nanoparticles. The conversion can be effected in the presence of a second molecular cluster compound comprising a third ion and a fourth ion to be incorporated into the growing nanoparticles, under conditions permitting seeding and growth of the nanoparticles via consumption of a first molecular cluster compound. 1. A method of producing nanoparticles comprising:effecting conversion of a molecular cluster compound to a material of the nanoparticles,said molecular cluster compound comprising a first ion and a second ion to be incorporated into the nanoparticles,wherein said conversion is effected under conditions permitting seeding and growth of the nanoparticles via consumption of other molecular cluster compounds.2. The method of claim 1 , wherein the first ion is a Group 13 element and the second ion is a Group 15 element.3. The method claim 2 , wherein the Group 13 element is indium (In) and the Group 15 element is phosphorus (P).4. The method of claim 1 , wherein the molecular cluster compound is selected from the group consisting of [RInPR′] claim 1 , [RInPR′] claim 1 , and [RInNR′] claim 1 , wherein{'sub': 3', '3', '7', '6', '2', '3', '3', '2', '5, 'R is Cl, Br, I, CH, CH, CH(CH), CH, and'}{'sub': 6', '5', '3', '3', '7', '3', '3', '2', '6', '13', '6', '2', '3', '3', '4', '9', '6', '5', '6', '4, 'R′ is Si(CH), Si(CH), Si(CH)(CH), CH(CH), CH, CF, CHF.'}5. The method of claim 1 , wherein the molecular cluster compound has a formula of [X][MSe(SPh)] claim 1 , wherein{'sup': 30', '+', '+, 'sub': 3', '3', '3, 'X is Li, (CH)NH, EtNH, and'}M is Zn, Cd.6. The method of claim 1 , wherein the molecular cluster compound is Zn(SEt)Et.7. The method of claim 1 , wherein conversion of the molecular cluster compound is effected under ...

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Номер записи: 57
23-01-2020 дата публикации

MINERAL SUPPLEMENTATION IN ALGAE

Номер: US20200022384A1
Автор: Gross Martin, Wen Zhiyou, Zhao Xuefei
Принадлежит:

A method of producing mineral-rich algae by growing algae with an algae biofilm growing apparatus, wherein the algae is fed a mineral-rich feed stock. Furthermore, the mineral-rich algae is harvested and used as a foodstuff for human and animal consumption. 1. A method of producing a selenium-rich algae , the steps comprising:providing an algae biofilm growing apparatus;growing algae using the algae biofilm growing apparatus;feeding the algae a selenium-rich feedstock thereby growing a selenium-rich algae;harvesting the selenium-rich algae.2. The method of wherein the selenium-rich feedstock is an inorganic selenium.3. The method of wherein the selenium-rich feedstock is an organic selenium.4. The method of wherein the selenium-rich feedstock includes a selenium salt.5. The method of wherein the selenium-rich feedstock includes sodium selenite.6. The method of wherein the selenium-rich feedstock includes sodium selenate.7. The method of wherein the algae absorbs the selenium-rich feedstock thereby producing a bio-available selenium.8. The method of wherein the algae adsorbs the selenium-rich feedstock on the algae cells' surface thereby producing a bio-available selenium.9. The method of wherein the algae absorbs and adsorbs the selenium-rich feedstock thereby producing a bio-available selenium.10. The method of wherein the algae contains extracellular polymeric substances which enhance adsorption of selenium by the algae.11. The method of wherein the algae contains extracellular polymeric substances which protect the algae from toxic effects of high concentrations of selenium.12. The method of wherein the algae biofilm growing apparatus is exposed to air claim 1 , wherein the temperature of the air within the algae biofilm apparatus is controlled.13. The method of wherein the algae biofilm growing apparatus is exposed to light claim 1 , wherein the light within the algae biofilm growing apparatus is controlled.14. The method of wherein the selenium-rich algae is ...

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Номер записи: 58
24-01-2019 дата публикации

PROCESSES FOR SYNTHESIZING NANOCRYSTALS

Номер: US20190023571A1
Автор: JANG Eun Joo, JANG Hyo Sook, JUN Shin Ae
Принадлежит:

A process of synthesizing Ga—Se nanocrystals is provided, the process including: 115.-. (canceled)16. A nanoparticle including a nanocrystal of a compound represented by Chemical Formula 1 or Chemical Formula 1-1:{'br': None, 'sub': x', 'y, 'GaSeA\u2003\u2003[Chemical Formula 1]'}{'br': None, 'sub': 'x', 'GaSe\u2003\u2003[Chemical Formula 1-1]'}wherein x is about 1.1 to 1.5, y is about 0.1 to 4, and A is S, Te, N, P, As, Al, In, Zn, Cd, Mg, Mn, Ag, Au, or a combination thereof.171. The nanoparticle of claim , wherein the nanoparticle comprises the nanocrystal of the compound represented by Chemical Formula 1-1.181. The nanoparticle of claim , wherein x is greater than or equal to about 1.2191. The nanoparticle of claim , wherein x is less than or equal to about 1.36.201. The nanoparticle of claim , wherein the nanocrystal of the compound represented by Chemical Formula 1 or Chemical Formula 1-1 is a selenium-rich Ga—Se nanocrystal.211. The nanoparticle of claim , wherein the A is S , Te , N , P , As , Al , Zn , Cd , Mg , Mn , Ag , Au , or a combination thereof.221. The nanoparticle of claim , wherein the nanoparticle has a core shell structure comprising a first nanocrystal and the nanocrystal of the compound represented by Chemical Formula 1 or Chemical Formula 1-1 is disposed on a surface of the first nanocrystal.23. The nanoparticle of claim 22 , wherein the first nanocrystal comprises a Group II-VI compound claim 22 , a Group III-V compound claim 22 , a Group IV-VI compound claim 22 , or a combination thereof.24. The nanoparticle of claim 23 , wherein the Group III-V compound further includes a Group II metal.25. The nanoparticle of claim 22 , wherein the first nanocrystal comprises a Group semiconductor nanocrystal core.26. The nanoparticle of claim 22 , wherein the first nanocrystal is a core-shell type semiconductor nanocrystal.27. The nanoparticle of claim 22 , wherein the first nanocrystal comprises ZnS claim 22 , ZnSe claim 22 , ZnTe claim 22 , ZnO claim ...

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Номер записи: 59
25-01-2018 дата публикации

2H TO 1T PHASE BASED TRANSITION METAL DICHALCOGENIDE SENSOR FOR OPTICAL AND ELECTRONIC DETECTION OF STRONG ELECTRON DONOR CHEMICAL VAPORS

Номер: US20180024085A1
Автор: Campbell Paul M., Culbertson James C., Friedman Adam L., Hanbicki Aubrey T., Perkins F. Keith
Принадлежит: The Government of the United States of America, as represented by the Secretary of the Navy

Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors. 1. A method for detecting whether an unknown chemical vapor comprises a strong electron donor , comprising:providing at least one sensor comprising a transition metal chalcogenide thin film comprising at least one region having a 2H phase;exposing the at least one sensor to an unknown chemical vapor;evaluating the transition metal chalcogenide thin film comprising at least one region having a 2H phase to determine whether the phase of the at least one region is 2H or 1T; anddetecting that the unknown chemical vapor comprises a strong electron donor if the phase of the at least one region of the transition metal chalcogenide thin film has changed from 2H to 1T.2. The method of claim 1 , wherein the transition metal chalcogenide thin film is evaluated using Raman spectroscopy claim 1 , photoluminescence spectroscopy claim 1 , or electronic resistance measurement.3. The method of claim 1 , further comprising annealing the at least one region of the transition metal chalcogenide thin film after the phase has changed from 2H to 1T claim 1 , thereby returning the at least one region of the transition metal chalcogenide thin film to the 2H phase.4. The method of claim 3 , wherein the annealing is carried out ...

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Номер записи: 60
28-01-2021 дата публикации

METHOD FOR PREPARING NANOCRYSTAL WITH CORE-SHELL STRUCTURE

Номер: US20210024356A1
Автор: CHENG Luling, YANG Yixing
Принадлежит:

Method for preparing nanocrystals with a core-shell structure is provided. The method includes: providing quantum dot cores; and performing N growth processes of shell layers on a quantum dot core to form a nanocrystal with a core-shell structure. A shell source includes a shell source cation precursor and a shell source anion precursor, and the shell source cation precursor is a metal organic carboxylate. The N growth processes include one or more groups of M growth processes of adjacent shell layers, where N and M are positive integers, N≥2 and N/3≤M≤N−1. Before and/or after performing each group of the M growth processes of adjacent shell layers, one of organic amine and organic carboxylic acid is mixed into a shell-layer-growth-reaction-system after a previous shell layer has formed, to form a mixed system to heat. A subsequent shell layer is grown over the previous shell layer. 1. A method for preparing nanocrystals , the method comprising:providing quantum dot cores; a shell source for performing the N growth of the shell layers includes a shell source cation precursor and a shell source anion precursor, and the shell source cation precursor is a metal organic carboxylate, and', {'b': '1', 'the N growth processes include one or more groups of M growth processes of adjacent shell layers, N is a positive integer greater than or equal to 2, and M is a positive integer and N/3≤M≤N−; and'}], 'performing N growth processes of shell layers on the quantum dot cores, thereby preparing N shell layers on a quantum dot core to form a nanocrystal with a core-shell structure, whereinbefore and/or after performing each group of the M growth processes of adjacent shell layers, mixing one of organic amine and organic carboxylic acid into a shell-layer-growth-reaction-system after a previous shell layer has formed, to form a mixed system, and heating the mixed system, and{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'growing a subsequent shell layer over the previous shell ...

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Номер записи: 61
23-01-2020 дата публикации

COMPACT AND HOMOGENEOUS QUANTUM DOTS AND METHODS OF MAKING THE SAME

Номер: US20200025772A1
Автор: Ma Liang, SMITH Andrew M., Tu Chunlai
Принадлежит:

The present disclosure provides quantum dots and methods of making the quantum dots comprising a substantially homogeneous population of monomeric nanocrystals, of a very small size, about 7 nm to about 12 nm in diameter. The method comprises mixing a nanocrystal coated with weakly binding ligands or ions with a polymer in a solution and incubating at a temperature greater than about 100° C., thereby forming a quantum dot having a substantially homogenous population of monomeric nanocrystals. The quantum dots can be further conjugated to bioaffinity molecules, enabling broad utilization of compact, biofunctional quantum dots for studying crowded macromolecular environments. 1. A method of making a quantum dot having a substantially homogeneous population of monomeric nanocrystals , the method comprising mixing a nanocrystal coated with weakly binding ligands or ions with at least one polymer in a solution and incubating at a temperature greater than about 100° C. , thereby forming a quantum dot having a substantially homogeneous population of monomeric nanocrystals.2. A method of making a quantum dot having a substantially homogeneous population of monomeric nanocrystals , the method comprising:coating a nanocrystal that is substantially free of hydrophobic ligands with weakly binding ligands or ions to form a nanocrystal coated with weakly binding ligands or ions;mixing the nanocrystal coated with weakly binding ligands or ions with at least one polymer in a solution;incubating at a temperature greater than about 100° C.; andforming a quantum dot having a substantially homogeneous population of monomeric nanocrystals.3. A method of making a quantum dot having a substantially homogeneous population of monomeric nanocrystals , the method comprising:removing hydrophobic ligands from a nanocrystal;coating the nanocrystal with a plurality of weakly binding ligands or ions to form a nanocrystal coated with weakly binding ligands or ions;mixing the nanocrystal coated with ...

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Номер записи: 62
24-04-2014 дата публикации

SEPARATION OF TELLURIUM BY SOLVENT EXTRACTION METHOD

Номер: US20140112860A1
Автор: CHOI Joon Chul, JEE Jae Gyu, Lee Hwa Young, LEE Joong Kee
Принадлежит:

A method for separating tellurium includes separating and recovering tellurium (Te) from a dissolved solution containing the tellurium using a solvent extraction by an extractant, which contains one selected from a group consisting of tributyl phosphate (TBP), tris(2-ethylhexyl) phosphate (TEHP) and a combination thereof. The method may separate and recover the tellurium as a high-priced metallic element from a material, such as a BiTe-based waste thermoelectric material, which contains not only the tellurium but also other metallic elements, simply and economically using a solvent extraction, whereby the tellurium with high yield and high purity can be separated, recovered and recycled. 1. A method for separating tellurium , comprising a procedure of separating and recovering tellurium (Te) from a dissolved solution containing the tellurium with a solvent extraction by an extractant , which contains one selected from the group consisting of tributyl phosphate (TBP) , tris(2-ethylhexyl) phosphate (TEHP) and a combination thereof.2. The method of claim 1 , wherein the dissolved solution contains hydrochloric acid.3. The method of claim 1 , wherein the solvent extraction comprises steps of:(1) preparing an extraction crude solution by mixing hydrochloric acid with the dissolved solution and mixing the extraction crude solution with the extractant as an organic phase so as to prepare a first extract solution containing metallic elements extracted from the dissolved solution;(2) mixing the first extract solution with a hydrochloric acid solution to prepare a second extract solution as an organic phase, which impurities have been removed from the first extract solution; and(3) mixing the second extract solution with water to prepare a recovery solution as an aqueous solution containing tellurium (Te).4. The method of claim 3 , wherein in the step (1) claim 3 , the hydrochloric acid is mixed such that a concentration of the hydrochloric acid is in a range of 4 to 10 mol/l ...

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Номер записи: 63
02-02-2017 дата публикации

METHOD FOR THE SYNTHESIS OF LAYERED LUMINESCENT TRANSITION METAL DICHALCOGENIDE QUANTUM DOTS

Номер: US20170029962A1
Автор: Damien Dijo, Gopalakrishnan Deepesh, Manikoth Shaijumon Mancheri
Принадлежит: INDIAN INSTITUTE OF SCIENCE EDUCATION AND RESEARCH , THIRUVANANTHAPURAM (IISER-TVM)

The invention discloses a method for the synthesis of monodispersed luminescent quantum dots of transition metal dichalcogenides (TMDC), single- or few-layered, using a single-step electrochemical exfoliation that involves dilute ionic liquid and water. The method disclosed helps to obtain nanoclusters of TMDC of desired size including small sizes ranging up to 6 nm, by varying the concentration of the electrolyte and the applied DC voltage. The invention further discloses a method by which mono- or few-layered luminescent transition metal dichalcogenides can be directly deposited onto conducting substrates in a uniform manner. The monodispersed single- or few-layered luminescent TMDC and electro-deposited substrates exhibit improved electronic conductivity and new active sites, making them suitable as high-performance electrocatalysts in hydrogen evolution reactions in solar water-splitting applications and also as electrodes for solar cell applications. 1. A method of synthesizing quantum dots , the method comprising:providing an electrochemical cell comprising an anode, a cathode, and an electrolytic solution, wherein the anode and the cathode are formed from a dichalcogenide material; andapplying an electric potential between the anode and the cathode for a suitable period to form quantum dots in the electrolytic solution.2. The method of claim 1 , wherein the dichalcogenide has a general formula MX claim 1 , wherein M is selected from a group consisting of one or more group VI metals claim 1 , and X is a chalcogen selected from a group consisting of S claim 1 , Se claim 1 , Te or Po.3. The method claim 2 , wherein M is selected from the group consisting of Mo or W.4. The method of claim 1 , wherein the electrolyte solution comprises 1-butyl-3-methylimidazoliumchloride ([BMIm]Cl) claim 1 , 1-ethyl-3-methylimidazolium chloride ([EMIm]Cl) claim 1 , or lithium bis(trifluoromethylsulphonyl)imide (LiTFSI) claim 1 , lithium perchlorate (LiClO) claim 1 , sodium ...

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Номер записи: 64
04-02-2016 дата публикации

COVER GLASS FOR SOLAR CELL, SOLAR CELL MODULE PROVIDED WITH COVER GLASS FOR SOLAR CELL, COATING LIQUID FOR FORMING TRANSPARENT FILM, AND METHOD FOR FORMING TRANSPARENT PROTECTIVE FILM

Номер: US20160035923A1
Автор: OKAMURA Isao
Принадлежит:

A provided cover glass for a solar cell panel has excellent transparency, and minimal incidence so-called “glass surface turbidity” due to reactions with components contained in a glass substrate. The cover glass for the solar cell panel comprises: the glass substrate including a surface; and a transparent protective film containing zinc telluride for coating the surface. Particularly, in the cover glass for the solar cell panel, the transparent protective film is preferably formed by bonding the zinc telluride with silica binders. Such a transparent protective film has excellent transparency, and reactions of the contained zinc telluride inhibit the surface of the glass substrate, which is a base of the solar cell, from becoming turbid. 1. Cover glass for a solar cell , the cover glass comprising:a glass substrate including a surface; anda transparent protective film containing zinc telluride for coating the surface.2. The cover glass as defined in claim 1 , wherein said transparent protective film is formed by bonding the zinc telluride with silica binders.3. The cover glass as defined in claim 1 , wherein said transparent protective film contains titanium oxide.4. The cover glass as defined in claim 1 , wherein said transparent protective film has thickness of 20-1200 nanometers.5. The cover glass as defined in claim 1 , wherein said glass substrate contains elements belonging to at least one of alkali metal and alkaline earth metal.6. A solar cell module claim 1 , including the cover glass as defined in .7. Coating liquid for forming a transparent protective film claim 1 , containing zinc telluride claim 1 , wherein a pH of the coating liquid is not less than nine.8. The coating liquid as defined in claim 7 , containing the zinc telluride of 0.1-20 wt % based on total 100 wt % of the coating liquid.9. The coating liquid as defined in claim 7 , further containing silica binders of 0.1-20 wt % in terms of SiObased on the total 100 wt % of the coating liquid.10. ...

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Номер записи: 65
11-02-2016 дата публикации

PROCESS FOR MAKING PRECISION NANOPARTICLES BY HYDROTHERMAL FLOW MANUFACTURING

Номер: US20160039673A1
Автор: MOUDGIL BRIJ M., Powers Kevin William, SAHA AJOY K., SCHEIFFELE GARY WAYNE, SHARMA PARVESH, SVORONOS SPYROS A., ZHOU JIAQING
Принадлежит:

A continuous reaction system (CRS) allows a method to prepare quantum dots (QDs) in a continuous manner with high precision. The CRS pumps a plurality of reagent fluids into one or more mixing sites to form a reaction fluid that is carried through a heating chamber at elevated pressures to carry out hydrothermal growth of the QDs. The pumps and heating chamber are controlled with a high precision by employing a detector downstream of the heating chamber to provide a signal that is dependent on the composition and size of the QDs. The signal is provided to a signal processor that provides a signal that control the flow rates and temperature parameters in the system. The QDs produced in this manner are consistent in size and composition and can be of a single semiconductor composition or can be core-shell QDs with a shell semiconductor formed on a core semiconductor. 1. A continuous reaction system (CRS) for preparation of nanoparticles , comprising:a plurality of reagent fluid reservoirs;a plurality of pumps, wherein each of said pumps is connected to a fluid velocity control means and directs fluid flow through a first conduit from a single reservoir of said plurality of reservoirs;at least one first junction or first mixing means, wherein at least two of said conduits connect for mixing of said reagent fluids to form a first combined fluid and directing said first combined fluid to at least one second conduit, and, optionally, at least one second junction or second mixing means, wherein at least two of said first conduits and/or second conduits connect for mixing of said reagent fluids and/or said combined fluid to form plurally combined fluid, wherein said combined fluid or said plurally combined fluid is a reaction fluid in at least one reaction conduit exiting the last of said first junction, said first mixing means, said second junction or said second mixing means;a heating chamber comprising a heater, optionally, a cooler, a heat transfer medium, a temperature ...

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Номер записи: 66
30-01-2020 дата публикации

CHALCOGENIDE MEMORY DEVICE COMPONENTS AND COMPOSITION

Номер: US20200035753A1
Автор: Fantini Paolo, Gealy F. Daniel, Lengade Swapril A., Varesi Enrico
Принадлежит:

Systems, devices, and methods related to or that employ chalcogenide memory components and compositions are described. A memory device, such as a selector device, may be made of a chalcogenide material composition. A chalcogenide material may have a composition that includes one or more elements from the boron group, such as boron, aluminum, gallium, indium, or thallium. A selector device, for instance, may have a composition of selenium, arsenic, and at least one of boron, aluminum, gallium, indium, or thallium. The selector device may also be composed of germanium or silicon, or both. The relative amount of boron, aluminum, gallium, indium, or thallium may affect a threshold voltage of a memory component, and the relative amount may be selected accordingly. A memory component may, for instance have a composition that includes selenium, arsenic, and some combination of germanium, silicon, and at least one of boron, aluminum, gallium, indium, or thallium. 1. (canceled)2. A composition of matter , comprising:silicon;germanium; andat least one element selected from a group of consisting of boron, aluminum, gallium, indium, and thallium, wherein a combination of the silicon, the germanium, and the at least one element selected from the group consisting of boron, aluminum, gallium, indium, and thallium is in an amount greater than or equal to 20% by weight, relative to a total weight of the composition.3. The composition of claim 2 , further comprising selenium.4. The composition of claim 3 , wherein the selenium is in an amount greater than or equal to 40% by weight claim 3 , relative to the total weight of the composition.5. The composition of claim 2 , further comprising arsenic.6. The composition of claim 5 , wherein the arsenic is in an amount ranging from 10% to 35% by weight claim 5 , relative to the total weight of the composition.7. The composition of claim 2 , wherein the at least one element selected from the group consisting of boron claim 2 , aluminum claim ...

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Номер записи: 67
07-02-2019 дата публикации

Porous Membranes Comprising Nanosheets and Fabrication Thereof

Номер: US20190039028A1
Автор: Bedanga SAPKOTA, Meni Wanunu
Принадлежит: Northeastern University Boston

A porous membrane comprising stacked layers of nanosheets, each nanosheet comprising one to three atomic layers of a 2D material comprising or consisting of one or more transition metal dichalcogenides is provided. The nanosheets have pores and the membrane comprises a network of water permeation pathways including through-pathways formed by the pores, horizontal pathways formed by gaps between the layers, and vertical pathways formed by gaps between adjacent nanosheets and stacking defects between the layers. Also provided is a method for making the membrane.

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Номер записи: 68
08-02-2018 дата публикации

SEMICONDUCTOR NANOCRYSTALS

Номер: US20180040749A1
Автор: Allen Peter Matthew, Bawendi Moungi G.
Принадлежит: Massachusetts Institute of Technology

A semiconductor nanocrystal include a first semiconductor material and have a luminescence quantum yield of at least 10%, at least 20%, or at least 30%. The nanocrystal can be substantially free of toxic elements. Populations of the nanocrystals can have an emission FWHM of no greater than 0.35 eV. 141.-. (canceled)42. A semiconductor nanocrystal comprising a core including a first semiconductor material , wherein the nanocrystal has a luminescence quantum yield of at least 20% , wherein the nanocrystal has a peak luminescence emission wavelength in the range of 540 nm to no more than 975 nm ,wherein the nanocrystal is a member of a nanocrystal population having an emission FWHM of no greater than 0.35 eV,wherein the group IB element is copper and the group IIIA element is indium.4341. The semiconductor nanocrystal of claim , wherein the nanocrystal has a luminescence quantum yield of at least 30%.4441. The semiconductor nanocrystal of claim , wherein the nanocrystal does not contain gallium.4541. The semiconductor nanocrystal of claim , wherein the nanocrystal does not include sulfur.4641. The semiconductor nanocrystal of claim , wherein the nanocrystal is a member of a nanocrystal population having an emission FWHM of no greater than 0.2 eV.4741. The semiconductor nanocrystal of claim , wherein the first IB-IIIA-VIA semiconductor material includes a smaller molar amount of copper than indium.4841. The semiconductor nanocrystal of claim , wherein the first IB-IIIA-VIA semiconductor material includes copper and indium in a ratio of less than 1:2.4941. The semiconductor nanocrystal of claim , wherein the group VIA element is sulfur.5041. The semiconductor nanocrystal of claim , wherein the nanocrystal is a member of a nanocrystal population having a deviation from mean radius of no greater than 15% rms.5141. The semiconductor nanocrystal of claim , wherein the core further includes a group IIB element.5241. The semiconductor nanocrystal of claim , wherein the first ...

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Номер записи: 69
06-02-2020 дата публикации

OXIDATIVE DEHYDROGENATION CATALYSTS

Номер: US20200038847A1
Автор: Barnes Marie, de Wit Perry, Gao Xiaoliang, Kim Yoonhee, Simanzhenkov Vasily, Sullivan David
Принадлежит: NOVA CHEMICALS (INTERNATIONAL) S.A.

Provided in this disclosure are oxidative dehydrogenation catalysts that include a mixed metal oxide having the empirical formula: 1. An oxidative dehydrogenation catalyst comprising a mixed metal oxide having the empirical formula:{'br': None, 'sub': 1.0', '0.12-0.49', '0.05-0.17', '0.10-0.20', 'd, 'MoVTeNbO'} d is a number to satisfy the valence of the oxide, and', 'the oxidative dehydrogenation catalyst is characterized by having XRD diffraction peaks (2θ degrees) at 22±0.2, 27±0.2, 28.0±0.2, and 28.3±0.1., 'wherein2. The oxidative dehydrogenation catalyst of claim 1 , wherein the catalyst is prepared by a process comprising wet ball milling a pretreated oxidative dehydrogenation catalyst having the empirical formula:{'br': None, 'sub': 1.0', '0.12-0.49', '0.05-0.17', '0.10-0.20', 'd, 'MoVTeNbO'}wherein d is a number to satisfy the valence of the oxide.3. The oxidative dehydrogenation catalyst of claim 1 , wherein the aspect ratio of the peak at 27±0.2 to the peak at 22±0.2 is 0.55:1 to 0.65:1.4. The oxidative dehydrogenation catalyst of claim 1 , wherein the aspect ratio of the peak at 27±0.2 to the peak at 22±0.2 is about 0.60:1.5. The oxidative dehydrogenation catalyst of claim 1 , wherein the aspect ratio of the peak at 28.3±0.1 to the peak at 27±0.2 is 0.50:1 to 0.80:1.6. The oxidative dehydrogenation catalyst of claim 1 , wherein the aspect ratio of the peak at 28.3±0.1 to the peak at 27±0.2 is 0.60:1 to 0.70:1.7. The oxidative dehydrogenation catalyst of claim 1 , wherein the aspect ratio of the peak at 28.3±0.1 to the peak at 27±0.2 is about 0.65:1.8. The oxidative dehydrogenation catalyst of claim 1 , wherein the aspect ratio of the peak at 28.0±0.2 to the peak at 28.2±0.1 is 0.8:1 to 1.1:1.9. The oxidative dehydrogenation catalyst of claim 1 , wherein the aspect ratio of the peak at 28.0±0.2 to the peak at 28.2±0.1 is 0.9:1 to 1:1.10. The oxidative dehydrogenation catalyst of claim 1 , wherein the aspect ratio of the peak at 28.2±0.1 to the peak at 28.4 ...

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Номер записи: 70
18-02-2021 дата публикации

SYNTHESIS OF LUMINESCENT 2D LAYERED MATERIALS USING AN AMINE-METAL COMPLEX AND A SLOW SULFUR-RELEASING PRECURSOR

Номер: US20210047561A1
Автор: DANIELS Steven
Принадлежит:

Methods of synthesizing transition metal dichalcogenide nanoparticles include forming a metal-amine complex, combining the metal-amine complex with a chalcogen source in at least one solvent to form a solution, heating the solution to a first temperature for a first period of time, and heating the solution to a second temperature that is higher than the first temperature for a second period of time. 1. A method of preparing a transition metal dichalcogenide (TMDC) nanoparticle , the method comprising:forming a metal-amine complex;combining the metal-amine complex with a chalcogen source in at least one solvent to form a solution;heating the solution to a first temperature for a first period of time; andheating the solution to a second temperature that is higher than the first temperature for a second period of time.2. The method of claim 1 , wherein the amine of the metal-amine complex is an unsaturated fatty amine.3. The method of claim 2 , wherein the unsaturated fatty amine is oleylamine.4. The method of claim 2 , wherein the unsaturated fatty amine is hexadecylamine.5. The method of claim 1 , wherein the metal of the metal-amine complex is a transition metal.6. The method of claim 1 , wherein the chalcogen source is an organo-chalcogen compound that supplies the chalcogen via the cleavage of a chalcogen-carbon bond.7. The method of claim 6 , wherein the organo-chalcogen compound is an alkyl thiol.8. The method of claim 7 , wherein the alkyl thiol is 1-dodecanethiol.9. The method of claim 6 , wherein the organo-chalcogen compound is an alkyl selenol.10. The method of claim 9 , wherein the alkyl selenol is octane selenol.11. The method of claim 1 , wherein the metal of the metal-amine complex is molybdenum.12. The method of claim 1 , wherein the metal of the metal-amine complex comprises a metal carbonyl.13. The method of claim 12 , wherein the metal carbonyl is molybdenum hexacarbonyl.14. The method of claim 1 , wherein the at least one solvent is a coordinating ...

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Номер записи: 71
18-02-2016 дата публикации

TWO-DIMENSIONAL LARGE-AREA GROWTH METHOD FOR CHALCOGEN COMPOUND, METHOD FOR MANUFACTURING CMOS-TYPE STRUCTURE, FILM OF CHALCOGEN COMPOUND, ELECTRONIC DEVICE COMPRISING FILM OF CHALCOGEN COMPOUND, AND CMOS-TYPE STRUCTURE

Номер: US20160047059A1
Автор: KIM Sun-kook, RHYEE Jong-soo
Принадлежит: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY

Provided is a two-dimensional large-area growth method for a chalcogen compound, the method including: depositing a film of a transition metal element or a Group V element on a substrate; thereafter, uniformly diffusing a vaporized chalcogen element, a vaporized chalcogen precursor compound or a chalcogen compound represented by M′X′within the film; and, thereafter, forming a film of a chalcogen compound represented by MXby forming the chalcogen compound represented by MXthrough post-heating. 1. A two-dimensional large-area growth method for a chalcogen compound , the method comprising:forming a film of a transition metal element or a Group V, or Group VI element by depositing the transition metal element or the Group V, or Group VI element on a substrate;{'sub': 2+δ', '2+δ, 'diffusing the chalcogen element, the chalcogen precursor compound or the chalcogen compound represented by M′X′into the film of the transition metal element or the Group V, or Group VI element by contacting through vaporization at least one selected from the group consisting of a chalcogen element, a chalcogen precursor compound and a chalcogen compound represented by M′X′and combinations thereof with the film of the transition metal element or the Group V, or Group VI element, wherein M′ is a transition metal element or a Group V, or Group VI element, X′ is a chalcogen element, and 0≦δ≦0.5; and'}{'sub': 2', '2+δ, 'forming a film of the chalcogen compound represented by MXby post-heating the film of the transition metal element or the Group V, or Group VI element including the resultant diffused chalcogen element, chalcogen precursor compound or chalcogen compound represented by M′X′, wherein M is a transition metal element or a Group V, or Group VI element and X is a chalcogen element.'}21. The two-dimensional large-area growth method according to claim , wherein the transition metal is at least one selected from the group including Cr , Mo , W , Sn and combinations thereof , and the Group V , ...

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Номер записи: 72
16-02-2017 дата публикации

METHOD FOR PRODUCING DISPERSIONS OF NANOSHEETS

Номер: US20170044683A1
Автор: BUCKLEY David, CULLEN Patrick Linden, Howard Christopher, Skipper Neal
Принадлежит:

The present invention provides a method for producing a solution of nanosheets, comprising the step of contacting an intercalated layered material with a polar aprotic solvent to produce a solution of nanosheets, wherein the intercalated layered material is prepared from a layered material selected from the group consisting of a transition metal dichalcogenide, a transition metal monochalcogenide, a transition metal trichalcogenide, a transition metal oxide, a metal halide, an oxychalcogenide, an oxypnictide, an oxyhalide of a transition metal, a trioxide, a perovskite, a niobate, a ruthenate, a layered III-VI semiconductor, black phosphorous and a V-VI layered compound. The invention also provides a solution of nanosheets and a plated material formed from nanosheets. 1. A method for producing a solution of nanosheets , comprising the step of contacting an intercalated layered material with a polar aprotic solvent to produce a solution of nanosheets , wherein the intercalated layered material is prepared from a layered material selected from the group consisting of a transition metal dichalcogenide , a transition metal monochalcogenide , a transition metal trichalcogenide , a transition metal oxide , a metal halide , an oxychalcogenide , an oxypnictide , an oxyhalide of a transition metal , a trioxide , a perovskite , a niobate , a ruthenate , a layered III-VI semiconductor , black phosphorous and a V-VI layered compound.2. The method according to claim 1 , wherein the layered material is selected from the group consisting of a transition metal dichalcogenide claim 1 , a transition metal monochalcogenide claim 1 , a transition metal trichalcogenide claim 1 , a transition metal oxide claim 1 , a layered III-VI semiconductor claim 1 , black phosphorous and a V-VI layered compound.3. The method according to claim 2 , wherein the layered material is selected from the group consisting of a transition metal dichalcogenide claim 2 , a transition metal monochalcogenide ...

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Номер записи: 73
18-02-2016 дата публикации

HOMOGENEOUS PRECURSOR FORMATION METHOD AND DEVICE THEREOF

Номер: US20160049542A1
Автор: Agrawal Rakesh, Handwerker Carol, Walker Bryce Chryst, Zhang Ruihong
Принадлежит: PURDUE RESEARCH FOUNDATION

A direct solution method based on a versatile amine-thiol solvent mixture which dissolves elemental metals, metal salts, organometallic complexes, metal chalcogenides, and metal oxides is described. The metal containing and metal chalcogenide precursors can be prepared by dissolving single or multiple metal sources, chalcogens, and/or metal chalcogenide compounds separately, simultaneously, or stepwise. Multinary metal chalcogenides containing at least one of copper, zinc, tin, indium, gallium, cadmium, germanium, and lead, with at least one of sulfur, selenium, or both are obtained from the above-mentioned metal chalcogenide precursors in the form of thin films, nanoparticles, inks, etc. Furthermore, infiltration of metal containing compounds into a porous structure can be achieved using the amine-thiol based precursors. In addition, due to the appreciable solubility of metal sources, metal chalcogenides, and metal oxides in the mixture of amine(s) and thiol(s), this solvent mixture can be used to remove these materials from a system. 1. A method of dissolving at least one metal source , comprising contacting a starting material with a mixture of at least one amine and at least one thiol.2. The method of claim 1 , wherein the starting material comprises at least one an elemental metal claim 1 , a metal alloy claim 1 , a metal salt claim 1 , and/or an organometallic complex.3. The method of claim 2 , wherein the elemental metal comprises at least one Cu claim 2 , Zn claim 2 , Sn claim 2 , and/or Cd claim 2 , and the metal alloy comprises at least two elemental metals of Cu claim 2 , Zn claim 2 , Sn claim 2 , and Cd.4. The method of claim 1 , wherein the amine is a primary claim 1 , secondary claim 1 , tertiary amine claim 1 , and/or polyamine claim 1 , and the carbon chain ranges from C2 to C24.5. The method of claim 1 , wherein the thiol has the structure of R5-SH and/or HS—R6-SH claim 1 , with the carbon chain ranging in size from C2 to C16; R5 represents any ...

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Номер записи: 74
18-02-2016 дата публикации

TIN SELENIDE SINGLE CRYSTALS FOR THERMOELECTRIC APPLICATIONS

Номер: US20160049568A1
Автор: Kanatzidis Mercouri G., Zhao Li-Dong
Принадлежит:

Thermoelectric materials and thermoelectric cells and devices incorporating the thermoelectric materials are provided. Also provided are methods of using the cells and devices to generate electricity and to power external electronic devices. The thermoelectric materials comprise SnSe single crystals, including hole doped SnSe single crystals. 1. A thermoelectric material having a length and comprising SnSe single crystals having an a-axis , a b-axis and a c-axis , wherein not all crystalline orientations of the SnSe single crystals are represented equally along the length of the material , such that SnSe single crystals oriented along their b-axial direction or their c-axial direction , as defined with respect to the room temperature crystal structure of the SnSe , are selectively favored relative to those oriented along their a-axial direction; and further wherein the thermoelectric material has a ZTvalue of at least about 1.3 at a temperature of greater than 800 K , as measured along the length of the thermoelectric material.2. The material of having a ZTvalue of at least 1.4 at a temperature of 973 K claim 1 , as measured along the length of the material.3. The material of claim 1 , wherein greater than 80% of the SnSe single crystals are oriented claim 1 , to within ±10° claim 1 , along their b-axial direction along the length of the material claim 1 , as defined with respect to the room temperature crystal structure of the SnSe claim 1 , and the thermoelectric material has a ZTvalue of at least about 2 at a temperature of greater than 800 K claim 1 , as measured along the length of the material.4. The material of claim 1 , wherein greater than 90% of the SnSe single crystals are oriented claim 1 , to within ±5° claim 1 , along their b-axial direction along the length of the material claim 1 , as defined with respect to the room temperature crystal structure of the SnSe claim 1 , and the thermoelectric material has a ZTvalue of at least about 2 at a temperature ...

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Номер записи: 75
25-02-2016 дата публикации

CATALYST FOR CONVERSION OF PROPYLENE TO PRODUCT COMPRISING A CARBOXYLIC ACID MOIETY

Номер: US20160051968A1
Автор: Irshad Zaheer, Karim Khalid
Принадлежит:

In accordance with the invention, there is provided a novel catalyst composition comprising MoVGaPdNbXY, wherein X comprises La, Te, Ge, Zn, In, or W; and Y comprises Al or Si; wherein Mo, V, Ga, Pd, Nb, La, Te, Ge, Zn, In, W, Al, or Si are optionally present in combination with oxygen; wherein the catalyst does not comprise an additional element that acts as a catalyst in the conversion of a propylene to the product. Also, disclosed is a method for the conversion of a propylene to a carboxylic acid moiety by contacting the propylene with the disclosed catalyst. 1. A catalyst for the conversion of a propylene to a product comprising a carboxylic acid moiety , wherein the catalyst comprises:{'br': None, 'MoVGaPdNbXY,'} X comprises La, Te, Ge, Zn, In, or W; and', 'Y comprises Al or Si;, 'wherein'} 'one or more of Mo, V, Ga, Pd, Nb, La, Te, Ge, Zn, In, W, Al, and/or Si are optionally present in combination with oxygen;', 'wherein'}wherein the catalyst does not comprise an additional element that acts as a catalyst in the conversion of the propylene to the product.2. The catalyst according to claim 1 , wherein the product does not comprise substantially any acrolein.3. The catalyst of claim 1 , wherein the product does not comprise any acrolein.4. The catalyst of claim 1 , wherein the additional element is a metal.5. The catalyst of claim 1 , wherein the additional element comprises Sb or Cs claim 1 , or a combination thereof.6. A catalyst for the conversion of a propylene to a product comprising a carboxylic acid moiety claim 1 , wherein the catalyst consists essentially of:{'br': None, 'MoVGaPdNbXY,'} X comprises La, Te, Ge, Zn, In, or W; and', 'Y comprises Al or Si;, 'wherein'} 'Mo, V, Ga, Pd, Nb, La, Te, Ge, Zn, In, W, Al, and/or Si are optionally present in combination with oxygen.', 'wherein'}7. The catalyst of claim 6 , wherein the catalyst is present on a support.8. The catalyst of claim 6 , wherein the catalyst comprises:{'br': None, 'sub': a', 'b', 'c', 'd', ' ...

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Номер записи: 76
26-02-2015 дата публикации

HYDROMETALLURGICAL PROCESS FOR THE RECOVERY OF TELLURIUM FROM HIGH LEAD BEARING COPPER REFINERY ANODE SLIME

Номер: US20150053572A1
Автор: Bhattacharya Indra Narayan, Dash Barsha, Ghosh Malay Kumar, Mishra Barada Kanta, Sanjay Kali, Sarangi Chinmaya Kumar, Sheik Abdul Rauf, Subbaiah Tondepu
Принадлежит:

A hydrometallurgical process is provided for the recovery of tellurium as elemental tellurium powder from copper refinery anode slime containing high amount of lead. The process involves the removal of copper and lead from anode slime followed by the recovery of tellurium as elemental powders. An economical and environment friendly process is provided for producing tellurium from a high lead bearing anode slime as it involves only hydrometallurgical techniques and thereby avoids emission of any polluting gases and has an efficiency of 85 to 90%. The developed process of recovering tellurium as elemental powders from copper refinery anode slime is beneficial in the production of pure tellurium instead of tellurium compounds. It helps raise the profit margin of a non-ferrous metal industry dealing with extraction of copper from ores and treatment of anode slime for the recovery of other metal values. 1. A hydrometallurgical process for the recovery of tellurium as elemental powder from high lead bearing copper refinery anode slimes , wherein the process comprises:decopperisation of an anode slime bearing lead and tellurium;removal of the lead from the decopperised anode slime;solubilisation of the tellurium in an alkali bath; andelectrowinning of tellurium powders from the alkali bath.2. The process of claim 1 , wherein copper is removed by acid leaching of anode slime in a solution containing 0.9 to 1.3 M sulphuric acid.3. The process of claim 1 , wherein tellurium co-dissolved during decopperisation step is cemented out as copper telluride by adding copper powder with Te to Cu ratio of 1:5 in the sulphate solution.4. The process of claim 1 , wherein lead is separated from the decopperised anode slime by brine leaching using a leachant containing 5.5 to 6.0 M NaCl.5. The process of claim 1 , wherein lead is recovered as lead sulphide through precipitation by adding sodium sulphide with Pb to NaS ratio of 2:1 in the lead chloride solution.6. The process of claim 3 , ...

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Номер записи: 77
25-02-2016 дата публикации

HEAT TREATMENT METHOD AND THE PRODUCT PREPARED THEREFROM

Номер: US20160052786A1
Автор: Chen Tzu, Hou William Weijien, Li Sheng Han
Принадлежит:

The present invention provides a heat treatment method, particularly a heat treatment method in which a protective layer is directly applied onto a precursor to ensure that the precursor on each portion of the substrate is treated based on substantially the same conditions so that the quality of the prepared product layer is improved. The method of the present invention comprises: () providing a substrate; () applying a precursor onto the surface of the substrate; () covering the precursor-applied substrate with a protective layer to bring the substrate and the protective layer into direct contact; () placing the substrate obtained from step () into a heat chamber for heat treatment; and () removing the protective layer. A product prepared by said heat treatment method is also provided. 1. A heat treatment method , comprising the following steps:(1) providing a substrate;(2) applying a precursor onto a surface of the substrate;(3) covering the precursor-applied substrate with a protective layer to bring the substrate and the protective layer into direct contact;(4) placing the substrate obtained from step (3) into a heat chamber for heat treatment; and(5) removing the protective layer.2. The method according to claim 1 , wherein steps (2) to (4) or steps (2) to (5) are optionally repeated.3. The method according to claim 1 , wherein the substrate obtained from step (3) is placed in the heat chamber in a manner such that the protective layer faces the top of the heat chamber.4. The method according to claim 1 , wherein the heat treatment is carried out at a temperature ranging from room temperature to 1200° C.5. The method according to claim 1 , wherein the protective layer is a material consisting of carbon claim 1 , a quartz glass or a ceramic material.6. The method according to claim 1 , wherein the precursor comprises one or more elements selected from the group consisting of Cu claim 1 , In claim 1 , Zn claim 1 , Sn claim 1 , Ga and Cd and at least one element ...

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Номер записи: 78
26-02-2015 дата публикации

Semiconductor structure with insulator coating

Номер: US20150053914A1
Автор: Juanita N. Kurtin, Weiwen Zhao
Принадлежит: Individual

Semiconductor structures having insulators coatings and methods of fabricating semiconductor structures having insulators coatings are described. In an example, a method of coating a semiconductor structure involves adding a silicon-containing silica precursor species to a solution of nanocrystals. The method also involves, subsequently, forming a silica-based insulator layer on the nanocrystals from a reaction involving the silicon-containing silica precursor species. The method also involves adding additional amounts of the silicon-containing silica precursor species after initial forming of the silica-based insulator layer while continuing to form the silica-based insulator layer to finally encapsulate each of the nanocrystals.

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Номер записи: 79
25-02-2016 дата публикации

QUANTUM DOTS, RODS, WIRES, SHEETS, AND RIBBONS, AND USES THEREOF

Номер: US20160053174A1
Автор: Deng Zhengtao, Liu Yan, YAN Hao
Принадлежит:

Described are ZnCdSSe/ZnSSecore/shell nanocrystals, CdTe/CdS/ZnS core/shell/shell nanocrystals, optionally doped Zn(S,Se,Te) nano- and quantum wires, and SnS quantum sheets or ribbons, methods for making the same, and their use in biomedical and photonic applications, such as sensors for analytes in cells and preparation of field effect transistors. 1. A nanowire of the formula Zn(S ,Se ,Te) having a diameter between about 1 nm and 10 nm , wherein the nanowire is optionally doped with one or metal selected from the group consisting of Fe , Co , Ni , Mn , Au , Ag , and Cu.2. The nanowire of claim 1 , wherein the nanowire is single-crystalline.3. The nanowire of having a length between about 5 nm and about 250 nm.4. The nanowire of that is doped with about 0.1 to 2.0 mol. % manganese.5. The nanowire of having an absorption maximum between about 400 nm and 700 nm.6. The nanowire of claim 1 , further comprising a monolayer formed over the surface of the nanowire claim 1 , the monolayer comprising molecules of the formula claim 1 , X—Y—Z claim 1 , wherein X is a functional group capable of reacting with or coordinating with the surface of the nanowire; Y is a divalent linking group; and Z is a functional molecule.7. The nanowire of claim 6 , wherein X is a thiol or carboxylic acid group.8. The nanowire of claim 6 , wherein Z is one half of a specific binding pair.9. The nanowire of claim 8 , wherein Z is a nucleic acid claim 8 , avidin claim 8 , streptavidin claim 8 , biotin claim 8 , a protein claim 8 , an enzyme antagonist claim 8 , agonist claim 8 , partial agonist claim 8 , or partial antagonist claim 8 , or an antigen.10. The nanowire of of the formula ZnS.11. The nanowire of of the formula ZnSe.12. The nanowire of of the formula ZnTe.13. The nanowire of that is Mn-doped.14. A dispersion comprising the nanowire of and a solvent.15. The dispersion of claim 14 , wherein the solvent comprises an alkane. This application is a Divisional of U.S. application Ser. No. 14/ ...

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Номер записи: 80
25-02-2021 дата публикации

Semiconductor nanoparticles and core/shell semiconductor nanoparticles

Номер: US20210054273A1
Автор: Ryosuke Motoyoshi, Takafumi Moriyama
Принадлежит: Shoei Chemical Inc

An object of the present invention is to provide semiconductor nanoparticles having high quantum efficiency (QY) and a narrow full width at half maximum (FWHM). Semiconductor nanoparticles according to an embodiment of the present invention are semiconductor nanoparticles including at least, In, P, Zn and S, wherein the semiconductor nanoparticles include the components other than In in the following ranges: 0.50 to 0.95 for P, 0.30 to 1.00 for Zn, 0.10 to 0.50 for S, and 0 to 0.30 for halogen, in terms of molar ratio with respect to In.

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Номер записи: 81
25-02-2021 дата публикации

II-II-VI ALLOY QUANTUM DOT, PREPARATION METHOD THEREFOR AND APPLICATION THEREOF

Номер: US20210054274A1
Автор: ZHOU Jianhai
Принадлежит:

The disclosure provides a II-II-VI alloy quantum dot, a preparation method and application thereof. The preparation method includes: step S1: reacting a precursor containing a second Group II element and a precursor containing a first Group VI element to form a II-VI semiconductor nanocluster; step S2: mixing the II-VI semiconductor nanocluster with a precursor containing a first Group II element, and performing cation exchange and in-situ growth to obtain a first system containing the II-II-VI alloy quantum dot 1. A preparation method of II-II-VI alloy quantum dot , wherein comprising step S1: reacting a precursor containing a second Group II element and a precursor containing a first Group VI element to form a II-VI semiconductor nanocluster;step S2: mixing said II-VI semiconductor nanocluster with a precursor containing a first Group II element, and performing cation exchange and in-situ growth to obtain a first system containing the II-II-VI alloy quantum dot2. The preparation method in accordance with claim 1 , wherein a size of said II-VI semiconductor nanocluster is 1 nm or less.3. The preparation method in accordance with claim 1 , wherein said II-VI semiconductor nanocluster is one of ZnSe nanocluster claim 1 , ZnS nanocluster claim 1 , CdSe nanocluster and CdS nanocluster.4. The preparation method in accordance with claim 1 , wherein a reaction temperature range of said step S1 is 150˜310° C.5. The preparation method in accordance with claim 1 , wherein a precursor of said first Group VI element is a selenium precursor.6. The preparation method in accordance with claim 1 , wherein a precursor of said second Group II element is a carboxylate claim 1 , and preferably claim 1 , a carboxylate group of said precursor of said second Group II element is a carboxylate group having a carbon chain length of 8 to 22.7. The preparation method in accordance with claim 1 , wherein a precursor of said first Group II element is a carboxylate claim 1 , and preferably claim ...

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Номер записи: 82
21-02-2019 дата публикации

NANOCRYSTAL PREPARATION METHOD, NANOCRYSTALS, AND APPARATUS FOR PREPARING AND STORING DISSOLVED GAS

Номер: US20190055126A1
Автор: Wang Junzuo, Wang Yunjun
Принадлежит: Suzhou Xingshou Nanotech Co., Ltd.

A nanocrystal preparation method comprises the following steps: dissolving, in a first selected solvent, a first precursor which is in a gaseous state under normal temperature and normal pressure, to form a first precursor solution; dissolving a second precursor in a second selected solvent to form a second precursor solution, wherein the second precursor is a precursor of a metal element of Group I, Group II, Group III or Group IV; and in an inert gas atmosphere, adding the first precursor solution into a reaction vessel which contains the second precursor solution, wherein the first precursor chemically reacts with the second precursor to generate a nanocrystal. The present invention further discloses a nanocrystal prepared by the above method and an apparatus for preparing and storing a gas-dissolved solution. With the preparation method according to the invention, the amount of the first precursor in a gaseous state can be accurately controlled, the reaction is more uniform and more controllable, and the obtained nanocrystal has uniform volume distribution and a higher luminescent quantum yield. 1. A method for preparing nanocrystals , comprising the following steps:dissolving, in a first selected solvent, a first precursor which is in a gaseous state under normal temperature and normal pressure, to form a first precursor solution;dissolving a second precursor in a second selected solvent to form a second precursor solution, wherein the second precursor is a precursor of a metal element of Group I, Group II, Group III, or Group IV; andadding, in an inert gas atmosphere, the first precursor solution into a reaction vessel which contains the second precursor solution, wherein the first precursor chemically reacts with the second precursor to generate a nanocrystal.2. The method according to claim 1 , wherein dissolving the first precursor in the first selected solvent is a physical change.3. The method according to claim 1 , wherein the first precursor solution is ...

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Номер записи: 83
01-03-2018 дата публикации

DETECTION AND REMOVAL OF SELENATE FROM AQUEOUS SOLUTION

Номер: US20180057371A1
Автор: Scherson Daniel A., Strobl Jonathan
Принадлежит:

Systems and methods for detecting and/or removing selenate from an aqueous selenate-containing solution are described. The method includes adding sufficient acid to the aqueous selenate-containing solution to acidify the aqueous selenate-containing solution; contacting the acidic aqueous selenate-containing solution with an underpotantial deposited copper-coated electrode; and removing selenate from the aqueous selenate-containing solution by forming copper-selenide on the underpotential copper-coated electrode. 1. A method for removing selenate from an aqueous selenate-containing solution , comprising the steps of:adding sufficient acid to the aqueous selenate-containing solution to acidify the aqueous selenate-containing solution;contacting the acidic aqueous selenate-containing solution with an underpotential copper-coated electrode; andremoving selenate from the aqueous selenate-containing solution by forming copper-selenide on the underpotential copper-coated electrode.2. The method of claim 1 , wherein the underpotential copper-coated electrode is formed by contacting an electrode with an acidic copper-containing aqueous solution and applying sufficient potential to the electrode to form an underpotential copper-coated electrode.3. The method of claim 2 , wherein the copper-containing aqueous solution is formed by contacting an acidic aqueous selenate-containing solution with a copper (II) salt.4. The method of claim 2 , wherein the potential of the electrode is from about 0.55 to 0.33 V RHE during formation of the underpotential copper-coated electrode.5. The method of claim 1 , wherein the electrode is a gold electrode.6. The method of claim 1 , further comprising the step of regenerating the electrode.7. The method of claim 6 , wherein the electrode is regenerated by removing copper from the copper-selenide-coated electrode claim 6 , and then releasing selenium from the electrode by applying a positive voltage to the electrode.8. The method of claim 1 , ...

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Номер записи: 84
22-05-2014 дата публикации

METHOD FOR PREPARING SEMICONDUCTOR NANOCRYSTALS

Номер: US20140140918A1
Автор: Breen Craig, Liu Wenhao
Принадлежит: QD VISION, INC.

A method for making semiconductor nanocrystals is disclosed, the method comprising adding a secondary phosphine chalcogenide to a solution including a metal source and a liquid medium at a reaction temperature to form a reaction product comprising a semiconductor comprising a metal and a chalcogen, and quenching the reaction mixture to form quantum dots. Methods for overcoating are also disclosed. Semiconductor nanocrystals are also disclosed. 1. A method for making semiconductor nanocrystals , the method comprising:adding a secondary phosphine chalcogenide to a solution including a metal source and a liquid medium at a reaction temperature to form a reaction product comprising a semiconductor comprising a metal and a chalcogen, andquenching the reaction mixture resulting in quantum dots.25-. (canceled)6. A method in accordance with wherein the solution further includes a phosphonate species.7. A method in accordance with wherein the solution further includes a phosphonite species.8. A method in accordance with wherein the solution further includes carboxylate species.9. A method in accordance with wherein the solution further includes phosphonite species.10. (canceled)11. A method in accordance with wherein the reaction temperature is greater than 200° C.12. A method in accordance with wherein the step of quenching includes rapidly cooling the reaction mixture immediately upon completion of addition of the secondary phosphine chalcogenide.13. A method in accordance with wherein the step of quenching includes rapidly cooling the reaction mixture immediately upon completion of addition of the secondary phosphine chalcogenide to stop growth of the semiconductor nanocrystals formed in reaction mixture.14. A method in accordance with wherein the reaction mixture is cooled to a temperature that is about 200° C. or below.15. A method in accordance with wherein the reaction mixture is cooled to a temperature that is about 100° C. or below and further comprising isolating ...

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Номер записи: 85
04-03-2021 дата публикации

SEMICONDUCTOR NANOCRYSTAL PARTICLE, METHOD FOR PREPARING SAME, AND DEVICE INCLUDING SAME

Номер: US20210066543A1
Автор: HAN Yong Seok, JANG Eun Joo, JANG Hyo Sook, KIM Jin A, KIM Sung Woo, Kim Tae Hyung, LEE Jeong Hee, PARK Kun Su, WON Yuho
Принадлежит:

A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed. 1. A quantum dot comprisinga core comprising a first semiconductor nanocrystal comprising zinc and selenium, and optionally sulfur and/or tellurium, anda shell comprising a second semiconductor nanocrystal comprising zinc and at least one of sulfur or selenium,wherein the quantum dot has an average particle diameter of greater than or equal to about 13 nanometers, an emission peak wavelength in a range of about 440 nanometers to about 470 nanometers, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nanometers,wherein the quantum dot is cadmium-free.2. The quantum dot of claim 1 , wherein the quantum dot has an average particle diameter of about 13 nanometers to about 20 nanometers claim 1 , and an emission peak wavelength in a range of about 445 nanometers to about 460 nanometers.3. The quantum dot of claim 1 , wherein the quantum dot exhibits a quantum efficiency of greater than or equal to about 70%.4. The quantum dot of claim 1 , wherein the first semiconductor nanocrystal comprises zinc and selenium claim 1 , or zinc claim 1 , selenium claim 1 , and tellurium.5. The quantum dot of claim 1 , wherein the second semiconductor nanocrystal comprises zinc and selenium claim 1 , or zinc and sulfur.6. The quantum dot of claim 1 , wherein the ...

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Номер записи: 86
17-03-2022 дата публикации

SEMICONDUCTOR NANOCRYSTAL PARTICLES, PRODUCTION METHODS THEREOF, AND DEVICES INCLUDING THE SAME

Номер: US20220081614A1
Автор: JANG Eun Joo, KANG Hyun A, KIM Jin A, KIM Sung Woo, Kim Tae Hyung, LEE Jeong Hee, WON Yuho
Принадлежит:

A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: 120-. (canceled)21. Quantum dots , each comprising:a core comprising zinc, tellurium, and selenium; anda shell disposed on at least a portion of the core and comprising zinc; and selenium and optionally sulfur,wherein the quantum dots do not comprise cadmium,wherein the quantum dots comprise a mole ratio of tellurium with respect to selenium of greater than or equal to about 0.001.wherein in the quantum dots, a mole amount of selenium is greater than a mole amount of tellurium,wherein a maximum luminescent emission peak of the quantum dots is in a wavelength range from about 440 nanometers to about 560 nanometers,wherein a quantum efficiency of the quantum dots is greater than or equal to about 60% and less than or equal to 100%, andwherein a full width at half maximum of the quantum dots is less than or equal to about 45 nm.22. The quantum dots of claim 21 , wherein the maximum luminescent emission peak of the quantum dots is in a wavelength range from about 455 nanometers to about 530 nanometers.23. The quantum dots of claim 21 , wherein the maximum luminescent emission peak of the quantum dots is in a wavelength range of greater than or equal to about 450 nanometers and less than or equal to about 470 nanometers claim 21 , andwherein the quantum dots comprise a mole ratio of tellurium with respect to selenium of greater than or equal to about 0.001 and less than about 0.03.24. The quantum dots of claim 21 , wherein the maximum luminescent emission peak of the quantum dots is in a wavelength range from about 500 nanometers to about 540 nanometers.25. The quantum dots of claim 21 , wherein the shell comprises zinc claim 21 , selenium claim 21 , and sulfur.26. The quantum dots of claim 21 , ...

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Номер записи: 87
17-03-2022 дата публикации

METHOD FOR FORMING A COMPOSITE HAVING SEMICONDUCTOR STRUCTURES INCLUDING A NANOCRYSTALLINE CORE AND SHELL EMBEDDED IN A MATRIX

Номер: US20220085254A1
Автор: Carillo Matthew J., Hughes Steven M., Kurtin Juanita, Masson Georgeta, Park Oun-Ho, Theobald Brian
Принадлежит:

Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core. 1. A lighting apparatus , comprising:a light emitting diode; anda composite coating the light emitting diode, the composite comprising a matrix material; and a quantum dot comprising a nanocrystalline core comprising a first semiconductor material and a nanocrystalline shell comprising a second, different, semiconductor material at least partially surrounding the nanocrystalline core, the quantum dot having a photoluminescence quantum yield (PLQY) of at least 90%; and', 'an insulator layer encapsulating the quantum dot., 'a plurality of semiconductor structures embedded in the matrix material, each semiconductor structure comprising2. The lighting apparatus of claim 1 , wherein emission from each quantum dot is mostly claim 1 , or entirely claim 1 , from the nanocrystalline core.3. The lighting apparatus of claim 2 , wherein emission from the nanocrystalline core is at least approximately 75% of the total emission from the quantum dot.4. The lighting apparatus of claim 1 , wherein an absorption spectrum and an emission spectrum of each quantum dot are essentially non-overlapping.5. The lighting apparatus of claim 1 , wherein an absorbance ratio of each quantum dot for absorbance at 400 nanometers versus absorbance at an exciton peak for the quantum dot is approximately in the range of 5-35.6. The lighting apparatus of claim 1 , wherein each quantum dot is a down-converting quantum dot.7. The ...

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Номер записи: 88
08-03-2018 дата публикации

Minimizing Tin Loss During Thermal Processing of Kesterite Films

Номер: US20180069146A1
Автор: Todorov Teodor K.
Принадлежит:

Techniques for minimizing loss of volatile components during thermal processing of kesterite films are provided. In one aspect, a method for annealing a kesterite film is provided. The method includes: placing a cover over the kesterite film; and annealing the cover and the kesterite film such that, for an entire duration of the annealing, the cover is at a temperature T and the kesterite film is at a temperature T, wherein the temperature T is greater than or equal to the temperature T. Optionally, during a cool down segment of the annealing, conditions can be reversed to have the temperature T be less than the temperature T. A solar cell and method for formation thereof using the present annealing techniques are also provided. 1. A method for annealing a kesterite film , comprising:placing a cover over the kesterite film; and{'b': 1', '2', '1', '2, 'annealing the cover and the kesterite film such that, for an entire duration of the annealing, the cover is at a temperature T and the kesterite film is at a temperature T, wherein the temperature T is greater than or equal to the temperature T.'}2. The method of claim 1 , further comprising:{'b': 1', '2, 'annealing the cover and the kesterite film both i) from a top of the cover at the temperature T and ii) from a bottom of the kesterite film at the temperature T.'}3. The method of claim 2 , wherein the cover and the kesterite film are annealed from the top of the cover using a first heating plate over the cover claim 2 , and wherein the cover and the kesterite film are annealed from the bottom of the kesterite film using a second heating plate below the kesterite film.4. The method of claim 1 , wherein the kesterite film comprises copper (Cu) claim 1 , zinc (Zn) claim 1 , tin (Sn) claim 1 , and at least one of sulfur (S) and selenium (Se).5. The method of claim 1 , wherein the cover comprises a quartz annealing chamber.612. The method of claim 1 , wherein the temperature T and the temperature T are each greater than ...

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Номер записи: 89
28-02-2019 дата публикации

HIGHER MANGANESE SILICIDE BASED TELLURIDE COMPOSITE FOR THERMOELECTRIC CONVERSION AND PREPARATION METHOD THEREOF

Номер: US20190067545A1
Автор: DONG Jin-Feng, HIRONO Shinsuke, LI Jing-Feng, LI Zhiliang
Принадлежит:

Provided is a higher manganese silicide based telluride composite for thermoelectric conversion, represented by the following general formula (): 1. A higher manganese silicide based telluride composite for thermoelectric conversion represented by the following general formula (1):{'br': None, 'sub': 1.740±0.015', '1 x', 'x, '(MnSi)(MnTe)\u2003\u2003(1)'}{'br': None, 'wherein'}x is the molar fraction of manganese telluride in the higher manganese silicide based telluride composite for thermoelectric conversion and satisfies the relation 0 Подробнее

Номер записи: 90
09-03-2017 дата публикации

NANOSTRUCTURED LAYERS OF THERMOELECTRIC MATERIALS

Номер: US20170069813A1
Автор: Chabinyc Michael, Coates Nelson, Forster Jason, Lynch Jared, Russ Boris, Sahu Ayaskanta, Urban Jeffrey J.
Принадлежит: The Regents of the University of California

This disclosure provides systems, methods, and apparatus related to thermoelectric materials. In one aspect, a method includes providing a plurality of nanostructures. The plurality of nanostructures comprise a thermoelectric material, with each nanostructure of the plurality of nanostructures having first ligands disposed on a surface of the nanostructure. The plurality of nanostructures is mixed with a solution containing second ligands and a ligand exchange process occurs in which the first ligands disposed on the plurality of nanostructures are replaced with the second ligands. The plurality of nanostructures is deposited on a substrate to form a layer. The layer is thermally annealed. 1. A method comprising:(a) providing a plurality of nanostructures, the plurality of nanostructures comprising a thermoelectric material, each nanostructure of the plurality of nanostructures having first ligands disposed on a surface of the nanostructure;(b) mixing the plurality of nanostructures with a solution containing second ligands and a ligand exchange process occurring in which the first ligands disposed on the plurality of nanostructures are replaced with the second ligands;(c) depositing the plurality of nanostructures on a substrate to form a layer; and(d) thermally annealing the layer.2. The method of claim 1 , wherein the plurality of nanostructures comprises nanostructures selected from a group consisting of nanorods claim 1 , nanowires claim 1 , nanoparticles claim 1 , and quantum dots.3. The method of claim 1 , wherein the first ligands comprise oleylamine ligands.4. The method of claim 1 , wherein the plurality of nanostructures comprises CuSe or CuSe.5. The method of claim 1 , wherein operation (c) is performed with a solution processing technique.6. The method of claim 5 , wherein the solution processing technique is selected from a group consisting of spin coating claim 5 , dip coating claim 5 , spray coating claim 5 , doctor blade claim 5 , and inkjet ...

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Номер записи: 91
05-06-2014 дата публикации

NANOPARTICLES PASSIVATED WITH CATIONIC METAL-CHALCOGENIDE COMPOUND

Номер: US20140151612A1
Автор: CHO Kyung-sang, CHOI Byoung-lyong, CHOI Dong-hyeok, Kim Sang-wook, KIM Tae-ho
Принадлежит:

Provided are nanoparticles passivated with a cationic metal-chalcogenide complex (MCC) and a method of preparing the same. A passivated nanoparticle includes: a core nanoparticle; and a cationic metal-chalcogenide compound (MCC) fixed on a surface of the core nanoparticle 1. A cationic metal-chalcogenide compound.2. The cationic metal-chalcogenide compound of claim 1 , wherein the cationic metal-chalcogenide compound is selected from the group consisting of ZnS claim 1 , ZnSe claim 1 , ZnTe claim 1 , CuS claim 1 , CuSe claim 1 , CuTe claim 1 , MnS claim 1 , MnSe claim 1 , MnTe claim 1 , FeS claim 1 , FeSe claim 1 , FeTe claim 1 , CoS claim 1 , CoSe claim 1 , CoTe claim 1 , and mixtures thereof.3. A passivated nanoparticle comprising:a core nanoparticle; anda cationic metal-chalcogenide compound (MCC) fixed on a surface of the core nanoparticle.4. The passivated nanoparticle of claim 3 , wherein the cationic MCC is selected from the group consisting of ZnS claim 3 , ZnSe claim 3 , ZnTe claim 3 , CuS claim 3 , CuSe claim 3 , CuTe claim 3 , MnS claim 3 , MnSe claim 3 , MnTe claim 3 , FeS claim 3 , FeSe claim 3 , FeTe claim 3 , CoS claim 3 , CoSe claim 3 , CoTe claim 3 , and mixtures thereof.5. The passivated nanoparticle of claim 3 , wherein the core nanoparticle is a quantum dot claim 3 , a metal nanocrystal (NC) claim 3 , a magnetic NC claim 3 , an oxide NC claim 3 , a nanowire claim 3 , or a nanoplate.6. The passivated nanoparticle of claim 5 , wherein the quantum dot is selected from the group consisting of CdS claim 5 , CdSe claim 5 , CdTe claim 5 , ZnS claim 5 , ZnSe claim 5 , ZnTe claim 5 , ZnO claim 5 , HgS claim 5 , HgSe claim 5 , HgTe claim 5 , CdSeS claim 5 , CdSeTe claim 5 , CdSTe claim 5 , ZnSeS claim 5 , ZnSeTe claim 5 , ZnSTe claim 5 , HgSeS claim 5 , HgSeTe claim 5 , HgSTe claim 5 , CdZnS claim 5 , CdZnSe claim 5 , CdZnTe claim 5 , CdHgS claim 5 , CdHgSe claim 5 , CdHgTe claim 5 , HgZnS claim 5 , HgZnSe claim 5 , CdHgZnTe claim 5 , CdZnSeS claim 5 , ...

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Номер записи: 92
15-03-2018 дата публикации

Contacts for Bi-Te-Based Materials and Methods of Manufacture

Номер: US20180076372A1
Автор: Liu Weishu, Ren Zhifeng
Принадлежит: UNIVERSITY OF HOUSTON SYSTEM

Systems and methods of manufacturing thermoelectric devices comprising at least one electrical contact fabricated using hot-pressing to increase the bonding strength at the contact interface(s) and reducing the contact resistance. The hot pressed component may include a first and a second metallic layer each in contact with a thermoelectric layer, and where a contact resistance between the first metallic layer and the thermoelectric layer or between the second metallic layer and the thermoelectric layer is less than about 10 μΩ cm. When interlayers are employed in a thermoelectric device, first hot pressed contact interface is formed between the thermoelectric layer and the first interlayer and a second hot pressed contact interface is formed between the thermoelectric layer and the second interlayer, and at least one of the first and the second hot pressed contact interfaces comprises a bonding strength of at least 16 MPa. 1. A thermoelectric device comprising: a first metallic layer in contact with a first thermoelectric layer;', 'a second metallic layer in contact with the first thermoelectric layer;, 'a hot-pressed component comprising{'sup': '2', 'wherein at least one of a contact resistance between the first metallic layer and the first thermoelectric layer and a contact resistance between the second metallic layer and the first thermoelectric layer is less than about 10 μΩ cm.'}2. The device of claim 1 , wherein the contact resistance between the first metallic layer and the first thermoelectric layer is less than about 5 μΩ cm.3. The device of claim 1 , wherein the contact resistance between the second metallic layer and the first thermoelectric layer is less than about 5 μΩ cm.4. The device of claim 1 , wherein the contact resistance between the first metallic layer and the first thermoelectric layer is less than about 1 μΩ cm.5. The device of claim 1 , wherein the contact resistance between the second metallic layer and the first thermoelectric layer is ...

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Номер записи: 93
16-03-2017 дата публикации

BiSbTeSe-based Thermoelectric Material

Номер: US20170077374A1
Автор: Bin Lin, Yiping Luo
Принадлежит: Leizig (guangdong) Thermoelectric Technologies Co Ltd

The present invention discloses a BiSbTeSe-based thermoelectric material, whose general formula is Bi m Sb n Te x Se y M z ; wherein, m=0.4-0.6, n=1.4-1.6, x=2.7-2.9, y=0.075-0.3, z=0.02-0.15, M is one or more elements of S, Si, P, Ge, Sn, Ce, Li, I, Br, Al, Cu, Ag, Yb, Tm, La, Gd and Dy. The BiSbTeSe-based thermoelectric material is prepared through powder mixing, alloy smelting and other steps. The BiSbTeSe-based thermoelectric material in the present invention has the advantages of low thermal conductivity and good thermoelectric properties, which expands the application area of thermoelectric material.

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Номер записи: 94
18-03-2021 дата публикации

2H TO 1T PHASE BASED TRANSITION METAL DICHALCOGENIDE SENSOR FOR OPTICAL AND ELECTRONIC DETECTION OF STRONG ELECTRON DONOR CHEMICAL VAPORS

Номер: US20210080419A1
Автор: Campbell Paul M., Culbertson James C., Friedman Adam L., Hanbicki Aubrey T., Perkins F. Keith
Принадлежит: The Government of the United States of America, as represented by the Secretary of the Navy

Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors. 1. A system for detecting whether a chemical vapor comprises a strong electron donor , comprising:at least one sensor comprising a transition metal chalcogenide thin film comprising at least one region having a 2H phase;an apparatus for evaluating the transition metal chalcogenide thin film comprising at least one region having a 2H phase to assess whether the phase of the at least one region is 2H or 1T; anda transmitter that generates a signal indicating that the chemical vapor comprises a strong electron donor if the phase of the at least one region of the transition metal chalcogenide thin film has changed from 2H to 1T.2. The system of claim 1 , wherein the apparatus for evaluating the transition metal chalcogenide thin film is a Raman spectrometer claim 1 , photoluminescence spectrometer claim 1 , or electronic resistance sensor.3. The system of claim 1 , further comprising a heating element for annealing the at least one region of the transition metal chalcogenide thin film after the phase has changed from 2H to 1T claim 1 , thereby returning the at least one region of the transition metal chalcogenide thin film to the 2H phase.4. The system of claim 3 , wherein the heating element is provided ...

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Номер записи: 95
23-03-2017 дата публикации

Two-dimensional large-area growth method for chalcogen compound, method for manufacturing cmos-type structure, film of chalcogen compound, electronic device comprising film of chalcogen compound, and cmos-type structure

Номер: US20170081778A1
Автор: Jong-soo RHYEE, Sun-kook KIM
Принадлежит: Industry Academic Cooperation Foundation of Kyung Hee University

Provided is a two-dimensional large-area growth method for a chalcogen compound, the method including: depositing a film of a transition metal element or a Group V element on a substrate; thereafter, uniformly diffusing a vaporized chalcogen element, a vaporized chalcogen precursor compound or a chalcogen compound represented by M′X′ 2+δ within the film; and, thereafter, forming a film of a chalcogen compound represented by MX 2 by forming the chalcogen compound represented by MX 2 through post-heating.

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Номер записи: 96
31-03-2022 дата публикации

TWINNED TWO-DIMENSIONAL TELLURIUM CRYSTALS WITH CO-EXISTING OPPOSITE CHIRALITY

Номер: US20220098038A1
Автор: Wang Yixiu, Wu Wenzhuo
Принадлежит:

Processes for synthesizing substrate-free twinned 2D tellurium crystals with co-existing opposite chirality, and twinned 2D tellurium crystals produced thereby. The substrate-free twinned 2D tellurium crystals include a first wing and a second wing, the first wing and second wing have opposite chirality, and the first wing and the second wing are joined together at an angle to form a V-shaped crystal. 1. A substrate-free twinned 2D tellurium crystal with co-existing opposite chirality , the twinned 2D tellurium crystal comprising a first wing and a second wing , the first wing and second wing having opposite chirality , and the first wing and the second wing are joined together at an angle to form a V-shaped crystal.2. The substrate-free twinned 2D tellurium crystal of claim 1 , wherein the angle between the first wing and the second wing of the V-shaped crystal is angles ranged from 73 to 78.5 degrees.3. The substrate-free twinned 2D tellurium crystal of claim 1 , wherein the angle between the first wing and the second wing of the V-shaped crystal is 76.2±0.80 degrees.4. The substrate-free twinned 2D tellurium crystal of claim 1 , wherein the first and second wings adjoin each other at a crystal boundary.5. The substrate-free twinned 2D tellurium crystal of claim 1 , wherein the twinned 2D tellurium crystal has a crystal structure made up of spiral chains of bonded atoms in a hexagonal array.6. The substrate-free twinned 2D tellurium crystal of claim 5 , wherein the twinned 2D tellurium crystal comprises three tellurium atoms per turn in each spiral chain.7. The substrate-free twinned 2D tellurium crystal of claim 6 , wherein the three tellurium atoms per turn in each spiral chain form an equilateral triangle shape.8. The substrate-free twinned 2D tellurium crystal of claim 1 , wherein the first wing and the second wing each independently has a width of 10 to 20 nm.9. A process of producing the substrate-free twinned 2D tellurium crystal of claim 1 , wherein the ...

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Номер записи: 97
14-03-2019 дата публикации

CHALCOGENIDE MEMORY DEVICE COMPONENTS AND COMPOSITION

Номер: US20190081103A1
Автор: Fantini Paolo, Gealy F. Daniel, LENGADE SWAPNIL A., Varesi Enrico
Принадлежит:

Systems, devices, and methods related to or that employ chalcogenide memory components and compositions are described. A memory device, such as a selector device, may be made of a chalcogenide material composition. A chalcogenide material may have a composition that includes one or more elements from the boron group, such as boron, aluminum, gallium, indium, or thallium. A selector device, for instance, may have a composition of selenium, arsenic, and at least one of boron, aluminum, gallium, indium, or thallium. The selector device may also be composed of germanium or silicon, or both. The relative amount of boron, aluminum, gallium, indium, or thallium may affect a threshold voltage of a memory component, and the relative amount may be selected accordingly. A memory component may, for instance have a composition that includes selenium, arsenic, and some combination of germanium, silicon, and at least one of boron, aluminum, gallium, indium, or thallium. 1. A composition of matter , comprising:selenium in an amount greater than or equal to 40% by weight, relative to a total weight of the composition;arsenic in an amount ranging from 10% to 35% by weight, relative to the total weight of the composition; andat least one element selected from a group consisting of boron, aluminum, gallium, indium, and thallium in an amount ranging from 0.15% to 35% by weight, relative to the total weight of the composition.2. The composition of claim 1 , further comprising:germanium in an amount ranging from 1% to 20% by weight, relative to the total weight of the composition.3. The composition of claim 2 , further comprising:silicon, wherein a combination of the silicon, the germanium, and the at least one element selected from the group consisting of boron, aluminum, gallium, indium, and thallium is an amount greater than or equal to 20% by weight, relative to the total weight of the composition.4. The composition of claim 1 , further comprising:silicon in an amount ranging from 1% ...

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Номер записи: 98
23-03-2017 дата публикации

VARIABLE RESISTANCE MATERIAL LAYERS AND VARIABLE RESISTANCE MEMORY DEVICES INCLUDING THE SAME

Номер: US20170084834A1
Автор: Ahn Dong-ho, Cho Sung-Lae, Kim Do-Hyung, KIM Jong-uk
Принадлежит:

A variable resistance material layer including germanium (Ge), antimony (Sb), tellurium (Te), and at least one type of impurities X. The variable resistance material layer having a composition represented by a chemical formula of X(GeSbTe), wherein an atomic concentration of the impurities X is in a range of 0 Подробнее

Номер записи: 99
02-04-2015 дата публикации

Crystals of semiconductor material having a tuned band gap energy and method for preparation thereof

Номер: US20150090942A1
Автор: Anastasia BRIF, Boaz Pokroy
Принадлежит: Technion Research and Development Foundation Ltd

The present invention provides a semiconductor crystal comprising a semiconductor material having a tuned band gap energy, and methods for preparation thereof. More particularly, the invention provides a semiconductor crystal comprising a semiconductor material and amino acid molecules, peptides, or a combination thereof, incorporated within the crystal lattice, wherein the amino acid molecules, peptides, or combination thereof tune the band gap energy of the semiconductor material.

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Номер записи: 100