Cathode material for fuel cell, cathode for fuel cell including the same, method of manufacturing the cathode, and solid oxide fuel cell including the cathode

A cathode material for a fuel cell, the cathode material for a fuel cell including a lanthanide metal oxide having a perovskite crystal structure; and a bismuth metal oxide represented by Chemical Formula 1 below, Bi 2-x-y A x B y O 3 ,  Chemical Formula 1 wherein A and B are each a metal with a valence of 3, A and B are each independently at least one element selected from a rare earth element and a transition metal element, A and B are different from each other, and 0<x≦0.3 and 0<y≦0.3.

Thermoelectric conversion material and its manufacturing method, and thermoelectric conversion device using the same

Disclosed is a new thermoelectric conversion material represented by the chemical formula 1: Bi 1-x Cu 1-y O 1-z Te, where 0≦x<1, 0≦y<1, 0≦z<1 and x+y+z>0. A thermoelectric conversion device using said thermoelectric conversion material has good energy conversion efficiency.

PREPARATION APPARATUS FOR NANOCOMPOSITE MATERIAL AND SELF-ASSEMBLY PREPARATION METHOD

The present invention relates to a self-assembly preparation method of a nanocomposite material, and more particularly, relates to a self-assembly preparation method of a nanocomposite material comprising steps of: spraying a drug-containing solution onto metal aerosol nanoparticles to form a drug layer on the metal aerosol nanoparticles; and spraying a polymer-containing solution onto the metal aerosol nanoparticles, on which the drug layer is formed, to form a polymer layer on the drug layer, whereby since the method involves no liquid chemical process upon producing the metal aerosol nanoparticles, the processes are simple and can be performed even at a low temperature to suppress deformation of an organic or a drug, and the release rate of the drug, or the like can be easily controlled through metal types of metal aerosol nanoparticles, modification, and the like. 1. A preparation apparatus for a nanocomposite material comprising:a discharge part which comprises a pair of conductive rods spaced apart at a predetermined interval to form an interval and containing a metal, and a power supply part for applying a voltage to the conductive rods, wherein metal nanoparticles are generated at the interval between the conductive rods by spark discharge;a first spray part which comprises a drug injector for injecting a drug-containing solution onto the metal nanoparticles generated in the interval between the conductive rods, and forms a drug layer surrounding the metal nanoparticles; anda second spray part which comprises a polymer injector for injecting a polymer-containing solution onto the metal nanoparticles on which the drug layer is formed, and forms a polymer layer surrounding the drug layer.2. The preparation apparatus for a nanocomposite material according to claim 1 , wherein the metal is one or more selected from the group consisting of a transition metal claim 1 , a transition metal oxide claim 1 , a transition metal sulfur group element adduct claim 1 , a ...

MIXED OXIDES AND SULPHIDES OF BISMUTH AND COPPER FOR PHOTOVOLTAIC USE

The invention relates to a material comprising at least one compound having formula BiMCuM′OSM″, the methods for producing said material and the use thereof as a semiconductor, such as for photovoltaic or photochemical use and, in particular, for supplying a photocurrent. The invention further relates to photovoltaic devices using said compounds. 2. A process for preparing a material according to claim 1 , the process comprising solid milling a mixture comprising at least one of the inorganic compounds of bismuth and copper claim 1 , andoptionally at least one oxide, sulfide, oxysulfide, halide or oxyhalide of at least one element chosen from Bi and elements from group (A), andoptionally at least one oxide, sulfide, oxysulfide, halide or oxyhalide of at least one element chosen from Cu and elements from group (B).3. A process for preparing a material according to claim 1 , the process comprising:(a) preparation of at least one solution comprising metallic precursors in the form of at least one salt of the inorganic compounds of bismuth, andoptionally at least one oxide, sulfide, oxysulfide, halide or oxyhalide of at least one element chosen from Bi and elements from group (A) consisting of Pb, Sn, Hg, Ca, Sr, Ba, Sb, In, Tl, Mg, rare earth metals, and(b) preparation of at least one solution comprising metallic precursors in the form of at least one salt of the inorganic compounds of copper, andoptionally at least one oxide, sulfide, oxysulfide, halide or oxyhalide of at least one element chosen from Cu and elements from group (B) consisting of Ag, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Ga, Mg, Al, Cd, and(c) optionally preparation of at least one solution comprising a source of sulfur,(d) precipitation by mixing the solutions obtained on conclusion of steps (a), (b) and optionally (c),(e) filtration, and washing if necessary, of the compound of formula (I) obtained on conclusion of step (d).4. A process for preparing a material according to claim 1 , the process comprising ...

Systems and Methods for Separating Radium from Lead, Bismuth, and Thorium

Systems for separating Ra from a mixture comprising at least Ra, Pb, Bi, and Th are provided. The systems can include: a first vessel housing a first media and Th or Bi; a second vessel in fluid communication with the first vessel, the second vessel housing a second media and Pb; and a third vessel in fluid communication with the second vessel, the third vessel housing a third media and Ra, wherein at least one of the first, second, or third medias are different from the other media. 1. A system for separating Ra from a mixture comprising at least Ra , Pb , Bi , and Th , the system comprising:a first vessel housing a first media and either Pb or Bi and/or Th; anda second vessel in fluid communication with the first vessel, the second vessel housing a second media and Ra, wherein the first media is different from the second media.2. The system of wherein the first media is associated with Bi and/or Th and comprises a quaternary amine on a polystyrene divinylbenzene copolymer.3. The system of wherein the second media is associated with Ra and comprises a silica support.4. The system of wherein the first media is associated with Pb and comprises 18-crown-6 and 1-octanol on Amberchrom CG-71 polymer support.5. The system of wherein the second media is associated with Ra comprises a on silica support.6. The system of wherein the first media size is less than 100 μm.7. The system of wherein the second media size is greater than 100 μm.8. A system for separating Ra from a mixture comprising at least Ra claim 1 , Pb claim 1 , Bi claim 1 , and Th claim 1 , the system comprising:a first vessel housing a first media and Th and/or Bi; anda second vessel in fluid communication with the first vessel, the second vessel housing a first media and Pb, wherein the first media is different from the second media.9. The system of wherein the first vessel is in fluid communication with raw material supply.10. The system of wherein the first vessel is in fluid communication with a wash ...

Piezoceramic lead-free material

The invention relates to a piezoelectric lead-free material based on bismuth sodium titanate, to a method for the production thereof, and to the use thereof.

THERMOELECTRIC CONVERSION TECHNIQUE

The present disclosure provides a thermoelectric conversion material having a composition represented by a chemical formula of BaSrCaKMgBiSb. In the chemical formula, the following relationships are satisfied: 0.002≤a≤0.1, 0≤b, 0≤c, a+b+c≤1, and 0≤d≤2. In addition, the thermoelectric conversion material has a LaO-type crystal structure. 1. A thermoelectric conversion material having a composition represented by a chemical formula of BaSrCaKMgBiSb , [{'br': None, 'i': 'a≤', '0.002≤0.1,'}, {'br': None, 'i': '≤b,', '0'}, {'br': None, 'i': '≤c,', '0'}, {'br': None, 'i': 'a+b+c≤', '1, and'}, {'br': None, 'i': 'd≤', '0≤2,'}], 'where'}wherein{'sub': 2', '3, 'the thermoelectric conversion material has a LaO-type crystal structure.'}2. The thermoelectric conversion material according to claim 1 , whereinthe thermoelectric conversion material has a p-type polarity.3. A p-type thermoelectric conversion device claim 1 , comprising a thermoelectric converter claim 1 ,wherein{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the thermoelectric converter comprises the thermoelectric conversion material according to .'}4. A thermoelectric conversion device comprising:a p-type thermoelectric converter;an n-type thermoelectric converter;a first electrode;a second electrode; anda third electrode,whereina first end of the p-type thermoelectric converter and a first end of the n-type thermoelectric converter are electrically connected to each other via the first electrode,a second end of the p-type thermoelectric converter is electrically connected to the second electrode,a second end of the n-type thermoelectric converter is electrically connected to the third electrode, and{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the p-type thermoelectric converter comprises the thermoelectric conversion material according to .'}5. A method for obtaining electrical power by using a thermoelectric conversion material claim 1 , the method comprising:applying a temperature difference to the ...

Peroxide indicator

An indicator for detecting peroxide can detect the peroxide through change of hue thereof by reacting the peroxide according to a predefined concentration and a predefined sterilization treatment condition thereof. The indicator has better resistance against weather or light and preservation stability than those of prior indicators including inorganic compounds or organic compounds as discoloration components, can clearly change an arbitrary hue thereof under suitable discoloration rate, and has visible distinguishability. The indicator for detecting peroxide includes powdery metal sulfide, that undergoes discoloration by reacting with the peroxide. In particular a discoloration layer including the metal sulfide is applied onto at least a portion of a base substrate.

METHOD FOR PREVENTING OR REDUCING GROWTH OF A MICROORGANISM ON A SURFACE

Methods of synthesizing BiS—CdS particles in the form of spheres as well as properties of these BiS—CdS particles are described. Methods of photocatalytic degradation of organic pollutants employing these BiS—CdS particles and methods of preventing or reducing microbial growth on a surface by applying these BiS—CdS particles in the form of a solution or an antimicrobial product onto the surface are also specified. 17-. (canceled)8. A method for preventing or reducing growth of a microorganism on a surface , the method comprising:{'sub': 2', '3, 'applying BiS—CdS particles onto the surface;'} [{'sub': 2', '3, 'the BiS—CdS particles comprise bismuth(III) sulfide and cadmium(II) sulfide;'}, {'sub': 2', '3, 'the BiS—CdS particles are in the form of spheres; and'}, {'sub': 2', '3, 'the BiS—CdS particles are in contact with the surface for 1-24 hours.'}], 'wherein9. The method of claim 8 , wherein an atomic ratio of bismuth to cadmium in the BiS—CdS particles is in a range of 0.5:1 to 4:1 claim 8 , and an atomic ratio of sulfur to bismuth in the BiS—CdS particles is in a range of 3:2 to 8:1.10. The method of claim 8 , wherein the BiS—CdS particles have a BET surface area of 5-25 m/g claim 8 , a pore size of 10-50 nm claim 8 , and a pore volume of 0.02-0.2 cm/g.11. The method of claim 8 , wherein the BiS—CdS particles are applied onto the surface as a solution comprising a solvent and 1 μg/mL to 50 mg/mL of the BiS—CdS particles relative to a total volume of the solution.12. The method of claim 11 , wherein the solvent comprises dimethyl sulfoxide and water.13. The method of claim 8 , wherein the BiS—CdS particles are applied onto the skin of a subject as an antimicrobial cream comprising 0.01 wt %-50 wt % of the BiS—CdS particles relative to a total weight of the antimicrobial cream.14Acinetobacter baumannii, Enterobacter aerogenes, Escherchia coli, Klebsiella oxytocaKlebsiella pneumoniae.. The method of claim 8 , wherein the microorganism is at least one gram-negative ...

Method for chlorination and dehydrogenation of ethane

The present invention relates to a method for chlorination and dehydrogenation of ethane, comprising: mixing and reacting a low-melting-point metal chloride with C 2 H 6 , such that the low-melting-point metal chloride is reduced to a liquid-state low-melting-point metal, and the C 2 H 6 is chlorinated and dehydrogenized to give a mixed gas containing HCl, C 2 H 6 , C 2 H 4 , C 2 H 2 and C 2 H 3 Cl. In the method, the low-melting-point metal chloride is used as a raw material for chlorination and dehydrogenation, and the low-melting-point metal produced after the reaction is used as an intermediate medium. The method has the characteristics of simple process, low cost and high yield. Moreover, some acetylene and vinyl chloride can be produced as by-products at the same time when the ethylene is produced, by controlling the ratio of ethane to the chloride as desired in production.

BISMUTH-TITANIUM OXIDE NANOWIRE MATERIAL USED FOR PHOTOCATALYSIS, AND PREPARATION METHOD

The present invention relates to bismuth-titanium oxide composite nanowires used for photocatalysis and a preparation method, belonging to the field of inorganic nanomaterials. The preparation of the bismuth-titanium oxide composite nanowires is: polyvinylpyrrolidone (PVP) and bismuth nitrate are added to N-N dimethylformamide (DMF), tetrabutyl titanate and acetylacetone are added after magnetic stirring has been performed for a period of time, continual stirring is performed for more than six hours, and a transparent, stable solution is obtained. Electrospinning is performed on the solution in an electrospinning generation device under certain conditions, and the obtained electrospinning precursor nano fibres are air-fired in a muffle furnace to remove organic matter. After being cooled to room temperature, the electrospinning precursor nano fibres are placed in a tube furnace to be reduced and sintered in a hydrogen atmosphere. The method is energy-saving and environmentally friendly, the conditions are easy to control, costs are low, and large-scale industrial production is easy. The obtained bismuth-titanium oxide nanowires exhibit good degradation activity on methyl orange under illumination, where the methyl orange degradation rate is reaching more than 95% in a reaction lasting for 20 minutes. The obtained bismuth-titanium oxide nanowires have wide application prospects in relation to sewage treatment. 1. A bismuth-titanium oxide nanowire material used for photo catalysis , comprising a microstructure of a 200 nm-diameter porous linear structure , wherein a composition of the bismuth-titanium oxide nanowire material comprises a metal bismuth of JCPDS No. 44-1246 and a titanium oxide having a rutile structure of JCPDS No. 21-1272.2. A method for preparing a bismuth-titanium oxide nanowire material according to claim 1 , comprising:(1) adding polyvinylpyrrolidone (PVP) and bismuth nitrate to N-N dimethylformamide (DMF), adding tetrabutyl titanate and ...

LEAD-BASED ALLOY AND RELATED PROCESSES AND PRODUCTS

A lead-based alloy containing alloying additions of bismuth, antimony, arsenic, and tin is used for the production of doped leady oxides, lead-acid battery active materials, lead-acid battery electrodes, and lead-acid batteries. 1. A process for the production of doped leady oxide , the process comprising: 0.0090% to 0.0600% bismuth;', '0.0075% to 0.0125% antimony;', '0.0075% to 0.0125% arsenic;', '0.0035% to 0.0060% tin;', 'up to 0.0100% silver;', 'up to 0.0010% thallium; and', 'balance lead and incidental impurities;, 'charging lead-based alloy ingots into a ball mill, wherein the lead-based alloy ingots comprise, in percent by total alloy weightmilling the lead-based alloy ingots in air;oxidizing the lead-based alloy during the milling to form doped leady oxide; andforming powder particles of the doped leady oxide during the milling.2. The process of claim 1 , wherein the lead-based alloy ingots comprise claim 1 , in percent by total alloy weight claim 1 , 0.0001% to 0.0010% thallium.3. The process of claim 1 , wherein the lead-based alloy ingots comprise claim 1 , in percent by total alloy weight claim 1 , up to 0.0005% thallium.4. The process of claim 1 , wherein the lead-based alloy ingots comprise claim 1 , in percent by total alloy weight claim 1 , from 0.0001% to 0.0005% thallium.5. The process of claim 1 , wherein the lead-based alloy ingots comprise claim 1 , in percent by total alloy weight claim 1 , from 0.0090% to 0.0150% bismuth.6. The process of claim 1 , wherein the lead-based alloy ingots comprise claim 1 , in percent by total alloy weight claim 1 , from 0.0090% to 0.0110% antimony.7. The process of claim 1 , wherein the lead-based alloy ingots comprise claim 1 , in percent by total alloy weight claim 1 , from 0.0090% to 0.0110% arsenic.8. The process of claim 1 , wherein the lead-based alloy ingots comprise claim 1 , in percent by total alloy weight:0.0090% to 0.0150% bismuth;0.0090% to 0.0110% antimony;0.0090% to 0.0110% arsenic;0.0035% to 0.0060 ...

COATING LIQUID FOR FORMING SULFIDE SEMICONDUCTOR, SULFIDE SEMICONDUCTOR THIN FILM, AND THIN FILM SOLAR CELL

The present invention aims to provide a sulfide semiconductor-forming coating liquid capable of easily forming a sulfide semiconductor having a large area, the sulfide semiconductor being useful as a semiconductor material for photoelectric conversion materials. The present invention also aims to provide a sulfide semiconductor thin film produced using the sulfide semiconductor-forming coating liquid; and a thin film solar cell. The present invention provides a sulfide semiconductor-forming coating liquid, the coating liquid containing a complex containing a metal element of group 15 of the periodic table and sulfur. 1. A sulfide semiconductor-forming coating liquid , comprising a complex containing a metal element of group 15 of the periodic table and sulfur.2. The coating liquid according to claim 1 , obtained from materials comprising at least a metal-containing compound containing a metal element of group 15 of the periodic table claim 1 , a sulfur-containing compound claim 1 , and an organic solvent.3. A sulfide semiconductor thin film produced by applying claim 1 , to a substrate claim 1 , the sulfide semiconductor-forming coating liquid according to .4. A thin film solar cell claim 1 , comprising a sulfide semiconductor produced using the sulfide semiconductor-forming coating liquid according to claim 1 ,the sulfide semiconductor serving as a photoelectric conversion layer.5. The thin film solar cell according to claim 4 ,wherein the photoelectric conversion layer further comprises an organic semiconductor adjacent to the sulfide semiconductor.6. A sulfide semiconductor thin film produced by applying claim 2 , to a substrate claim 2 , the sulfide semiconductor-forming coating liquid according to .7. A thin film solar cell claim 2 , comprising a sulfide semiconductor produced using the sulfide semiconductor-forming coating liquid according to claim 2 ,the sulfide semiconductor serving as a photoelectric conversion layer. The present invention relates to a ...

ANTIMICROBIAL AGENT FOR POWDER COATING COMPOSITIONS

A microbe-resistant powder coating composition including an antimicrobial agent is described. The antimicrobial agent is an inorganic bismuth-containing compound, and may be used in conjunction with other bismuth-containing compounds or other biocidal agents or methods. 1. A method comprising:(a) providing a powder coating composition including an effective amount of at least one antimicrobial agent comprising at least one inorganic bismuth-containing compound;(b) depositing the powder coating composition onto at least a portion of an article; and(c) forming a film from the powder coating composition to create a coated article.2. A composition comprising , a powder coating composition including an effective amount of at least one antimicrobial agent comprising at least an inorganic bismuth-containing compound.3. A composition or method according to any of the preceding claims , wherein the inorganic bismuth-containing compound is a bismuth salt of a metal oxyanion.4. The composition or method according to any of the preceding claims , wherein the inorganic bismuth-containing compound is bismuth aluminate.5. The composition or method according to any of the preceding claims , wherein the antimicrobial agent further comprises an organic bismuth-containing compound.6. The composition or method according to any of the preceding claims , wherein the powder coating composition comprises at least one thermoset polymer and forming a film comprises curing the at least one thermoset polymer.7. The composition or method according to any of the preceding claims , wherein the powder coating composition comprises at least one thermoplastic polymer and forming a film comprises hardening the at least one thermoplastic polymer.8. The composition or method according to any of the preceding claims , wherein the powder coating composition further comprises one or more pigments , crosslinking agents , dispersing agents , additives , fillers , carriers or combinations thereof.9. The ...

METHODS OF DEGRADING ORGANIC POLLUTANTS AND PREVENTING OR TREATING MICROBE USING Bi2S3-CdS PARTICLES

Methods of synthesizing BiS—CdS particles in the form of spheres as well as properties of these BiS—CdS particles are described. Methods of photocatalytic degradation of organic pollutants employing these BiS—CdS particles and methods of preventing or reducing microbial growth on a surface by applying these BiS—CdS particles in the form of a solution or an antimicrobial product onto the surface are also specified. 1. A method for degrading an organic pollutant , the method comprising:{'sub': 2', '3, 'contacting BiS—CdS particles with an aqueous solution comprising the organic pollutant to form a mixture;'}illuminating the mixture with a light at a wavelength in a range of 200-700 nm for 0.1-6 hours thereby degrading the organic pollutant; [{'sub': 2', '3, 'the BiS—CdS particles comprise bismuth(III) sulfide and cadmium(II) sulfide;'}, {'sub': 2', '3, 'the BiS—CdS particles are in the form of spheres; and'}, 'the organic pollutant is present in the aqueous solution at a concentration of 1-1,000 mg/L relative to a total volume of the aqueous solution., 'wherein2. The method of claim 1 , wherein an atomic ratio of bismuth to cadmium in the BiS—CdS particles is in a range of 0.5:1 to 4:1 claim 1 , and an atomic ratio of sulfur to bismuth in the BiS—CdS particles is in a range of 3:2 to 8:1.3. The method of claim 1 , wherein the BiS—CdS particles are in the form of spheres with an average diameter of 0.3-5 μm.4. The method of claim 1 , wherein the BiS—CdS particles have a BET surface area of 5-25 m/g claim 1 , a pore size of 10-50 nm claim 1 , and a pore volume of 0.02-0.2 cm/g.5. The method of claim 1 , wherein an amount of the BiS—CdS particles in the mixture is in a range of 0.1-10 g/L relative to a total volume of the mixture.6. The method of claim 1 , wherein at least 30% by mole of the organic pollutant is degraded within 2 hours of illuminating.7. The method of claim 1 , wherein the organic pollutant comprises methyl orange claim 1 , methyl green claim 1 , or both ...

Thermoelectric conversion material and producing method thereof, and thermoelectric conversion element using the same

Compound semiconductors, expressed by the following formula: Bi 1-x M x Cu w O a-y Q1 y Te b-z Q2 z . Here, M is at least one element selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Eu, Sm, Mn, Ga, In, Tl, As and Sb; Q1 and Q2 are at least one element selected from the group consisting of S, Se, As and Sb; x, y, z, w, a, and b are 0≦x<1, 0<w≦1, 0.2<a<4, 0≦y<4, 0.2<b<4 and 0≦z<4. These compound semiconductors may be used for various applications such as solar cells or thermoelectric conversion elements, where they may replace compound semiconductors in common use, or be used along with compound semiconductors in common use.

Mixed oxides and sulphides of bismuth and silver for photovoltaic use

The invention relates to a material comprising at least one compound having formula Bi 1−x M x Ag 1−y−ε M′ y OS 1−z M″ z , the methods for producing said material and the use thereof as a semiconductor, such as for photovoltaic or photochemical use and, in particular, for supplying a photocurrent. The invention further relates to photovoltaic devices using said compounds.

Solid electrolyte material, solid electrolyte layer, and all solid state battery

A solid electrolyte material that includes a composite oxide containing Li and Bi, and at least one solid electrolyte having a garnet structure, a perovskite structure, and a LISICON structure.

METHOD FOR PREPARING BISMUTH IODIDE ARTICLE AND METHOD FOR MANUFACTURING RADIATION DETECTING ELEMENT

A method for preparing a bismuth iodide article includes heat-treating bismuth iodide at a temperature less than the melting point of bismuth iodide in an atmosphere containing iodine. 1. A method for preparing a bismuth iodide article , comprising:heat-treating bismuth iodide at a temperature less than the melting point of bismuth iodide in an atmosphere containing iodine.2. The method according to claim 1 , wherein the step of heat-treating is performed by heating an air-tight container in which the bismuth iodide is enclosed.3. The method according to claim 2 , further comprising depositing the iodine from the atmosphere in the air-tight container by applying a temperature gradient in the air-tight container so that the iodine is deposited in a region having a lower temperature than the region where the heat-treated bismuth iodide is placed.4. The method according to claim 2 , wherein the partial pressure of the iodine in the air-tight container is set in the range of 5.0×10MPa to 1.5×10MPa in the step of heat-treating.5. The method according to claim 1 , wherein the bismuth iodide is heat-treated under a condition where the temperature of the bismuth iodide is 200° C. or less.6. The method according to claim 1 , wherein the bismuth iodide is a monocrystalline crystal or a film.7. A method for manufacturing a radiation detecting element claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'performing the step of heat-treating as set forth in ; and'}forming an electrode on the bismuth iodide or the bismuth iodide article.8. The method according to claim 7 , wherein the bismuth iodide is in the form of a film on a substrate claim 7 , and the electrode is formed on the surface of the film of the bismuth iodide opposite the substrate.9. A method for manufacturing a radiation detector comprising: electrically connecting the radiation detecting element as set forth in to a signal processing unit configured to read signals from the electrode of the ...

PLASMA PROCESSING DETECTION INDICATOR USING INORGANIC SUBSTANCE AS A COLOR-CHANGE LAYER

The present invention provides a plasma treatment detection indicator including a color-changing layer that changes color by plasma treatment, exhibiting excellent heat resistance, with the gasification of the color-changing layer or the scattering of the fine debris of the color-changing layer caused by the plasma treatment being suppressed to such a degree as to not affect the electronic device properties. Specifically, the present invention provides a plasma treatment detection indicator including a color-changing layer that changes color by plasma treatment, the color-changing layer containing at least one metal element selected from the group consisting of Mo, W, Sn, V, Ce, Te, and Bi in the form of a simple substance and/or an inorganic compound containing at least one metal element selected from the group consisting of Mo, W, Sn, V, Ce, Te, and Bi. 1. A plasma treatment detection indicator comprising a color-changing layer that changes color by plasma treatment , the color-changing layer comprising at least one metal element selected from the group consisting of Mo , W , Sn , V , Ce , Te , and Bi in the form of a simple substance and/or an inorganic compound containing at least one metal element selected from the group consisting of Mo , W , Sn , V , Ce , Te , and Bi.2. The plasma treatment detection indicator according to claim 1 , wherein the valence of the at least one metal element contained in the inorganic compound is at least one member selected from the group consisting of Mo(II) to Mo(VI) claim 1 , W(II) to W(VI) claim 1 , Sn(II) claim 1 , Sn(IV) claim 1 , V(II) to V(V) claim 1 , Ce(III) to Ce(IV) claim 1 , Te(II) claim 1 , Te(IV) claim 1 , Te(VI) claim 1 , Bi(III) claim 1 , and Bi(V).3. The plasma treatment detection indicator according to claim 1 , wherein the inorganic compound is at least one member selected from the group consisting of oxides claim 1 , hydroxides claim 1 , carbonates claim 1 , oxide salts claim 1 , oxoacids claim 1 , oxoacid ...

ANODE MATERIAL FOR LITHIUM-ION BATTERY AND ANODE FOR LITHIUM-ION BATTERY

The present invention relates to an anode material for lithium-ion batteries. The anode material for lithium-ion batteries is represented by the molecular formula: MNTiO, where: 0≤x≤8, 1≤y≤8, and 1≤z≤8; M is an alkali metal selected from the group consisting of Li, Na, and K; and N is a group Velement selected from the group consisting of P, Sb, and Bi or a rare earth metal selected from the group consisting of Nd, Pm, Sm, Eu, Yb, and La. The anode material of the present invention has a delithiation potential of 0.8 to 1.2 V vs. Li/Li, and has a better potential plateau, better cycle performance, and better output-input properties, than a titanium-based anode material. 1. An anode material for lithium-ion batteries , the anode material being represented by a molecular formula: MNTiO , where:0≤x≤8, 1≤y≤8, and 1≤z≤8;M is an alkali metal selected from the group consisting of Li, Na, and K; and{'sub': 'A', 'N is a group Velement selected from the group consisting of P, Sb, and Bi or a rare earth metal selected from the group consisting of Nd, Pm, Sm, Eu, Yb, and La.'}2. The anode material for lithium-ion batteries according to claim 1 , wherein 0≤x≤5 claim 1 , 1≤y≤5 claim 1 , and 1≤z≤5.3. The anode material for lithium-ion batteries according to claim 1 , wherein M is Li or Na claim 1 , and N is Bi or Eu.4. The anode material for lithium-ion batteries according to claim 1 , wherein the anode material is LiEuTiO claim 1 , NaBiTiO claim 1 , LiBiTiO claim 1 , or BiTiO.5. The anode material for lithium-ion batteries according to claim 1 , wherein the anode material has a particle size of 0.1 to 20 μm.6. An anode for lithium-ion batteries comprising the anode material for lithium-ion batteries according to as an active material. The present invention relates to a new anode material for lithium-ion batteries and an anode for lithium-ion batteries comprising the anode material, particularly to an anode material having a delithiation potential of 0.8 to 1.2 V vs. Li/Li. ...

BISMUTH-BASED ENERGETIC MATERIALS

Energetic compounds based on bismuth salts with reduced toxicity that are obtained through the reaction of soluble bismuth salts with soluble salts of organic or inorganic energetic compounds based on azides, derivatives aromatic nitro compounds or nitrogenous heterocyclic compounds, together with the methods for their preparation and application. 1. A method for the preparation of energetic compounds based on bismuth salts with reduced toxicity , having properties of primary explosives , said method comprising reacting soluble bismuth salts with the soluble salts of organic or inorganic energetic compounds , wherein the organic or inorganic compounds are based on azides , aromatic nitro compounds , or derivatives thereof , or nitrogenous heterocyclic compounds , thereby forming a bismuth salt having a bismuch cation and an anion selected from the group consisting of an azide anion , an aromatic polynitro nitro anion , or derivative thereof , and a nitrogenous heterocyclic anion.2. A method for the preparation of a soluble bismuth oxo-perchlorate salt for the production of energetic compounds based on bismuth salts with reduced toxicity , having properties of primary explosives , said method comprising:reacting a concentrated perchloric acid with metal bismuth and its oxides or with oxo-carbonates, thereby obtaining bismuth perchlorate; andhydrolysing the bismuth perchlorate by dilution with water, thereby obtaining the soluble bismuth oxo-perchlorate salt.3. The method according to claim 1 , wherein the bismuth cation is selected from the group consisting of Bi(3+) claim 1 , BiO(+) claim 1 , Bi(OH)(+) claim 1 , Bi(OH)(2+) claim 1 , (BiO)OH(4+) claim 1 , and BiO(OH)(6+).4. The method according to claim 1 , wherein the anion is selected from the group consisting of inorganic azides claim 1 , polynitro-phenols claim 1 , polynitro-azido-phenols claim 1 , derivatives of polynitro-diazo-chinones claim 1 , polynitro-furoxanes and five-membered nitrogenous heterocycles.5. ...

METHOD AND APPARATUS FOR MANUFACTURING A LOW MELTING POINT NANO GLASS POWDER

Disclosed is a method for manufacturing a low melting point nano glass powder. The method includes the steps of: preparing a bismuth-based low melting point glass powder precursor of a micro size, having bismuth (Bi) as the main ingredient; injecting the glass powder precursor into a reaction chamber of a plasma treatment device; applying thermal plasma via a direct current power source to the glass powder precursor injected into the reaction chamber, to vaporize the glass powder precursor; and generating nano glass powder having a nano size by quenching the gas generated by vaporizing the glass powder precursor. 1. A method of preparing nano glass powders , comprising:preparing a micro-sized bismuth based low melting point glass powder precursor containing bismuth as a main constituent;injecting the glass powder precursor into a reaction tube of a plasma processing apparatus;vaporizing the glass powder precursor by applying thermal plasma generated by direct current power to the glass powder precursor injected into the reaction tube; andproducing nano-sized nano glass powders by rapidly cooling a gas formed when the glass powder precursor is vaporized.2. The method according to claim 1 , wherein electric power applied to generate the thermal plasma is 6 to 15 kW.3. The method according to claim 1 , wherein an assist gas is selectively injected into the reaction tube claim 1 , the assist gas preserving an amorphous structure of the nano glass powders by suppressing reduction and crystallization of the produced nano glass powders.4. The method according to claim 3 , wherein the assist gas is oxygen gas.5. The method according to claim 1 , wherein the glass powder precursor comprises bismuth oxide (BiO) claim 1 , aluminum oxide (AlO) and boron oxide (BO) claim 1 , and further comprises at least one type of constituents selected from RO(R designates an alkaline earth metal) and MO (M designates a transition metal).6. The method according to claim 1 , wherein the ...

PHOTOCATALYSTS BASED ON BISMUTH OXYHALIDE, PROCESS FOR THEIR PREPARATION AND USES THEREOF

The invention provides a process for the preparation of bismuth oxyhalide, comprising a precipitation of bismuth oxyhalide in an acidic aqueous medium in the presence of a reducing agent. Also provided are bismuth oxyhalide compounds doped with elemental bismuth B, The use of Bidoped bismuth oxyhalide as photocatalysts in water purification is also described. 1) A process for the preparation of bismuth oxyhalide , comprising a precipitation of bismuth oxyhalide in an acidic aqueous medium in the presence of a reducing agent.2) A process according to claim 1 , comprising combining at least one bismuth salt and at least one halide source in an acidic aqueous medium in the presence of a reducing agent claim 1 , and isolating a precipitate formed.3) A process according to claim 2 , wherein the halide source is an organic halide salt.4) A process according to claim 3 , wherein the organic halide salt is selected from the group consisting of quaternary ammonium salts represented by the formulas N+RRRRCl claim 3 , N+RRRRBr and their mixture claim 3 , wherein R claim 3 , R claim 3 , Rand Rare alkyl groups claim 3 , which may be the same or different.5) A process according to claim 1 , wherein the reducing agent comprises hydride.6) A process according to claim 5 , wherein the reducing agent is borohydride.7) A process according to claim 1 , wherein the acidic aqueous medium comprises an organic acid.8) A process according to claim 1 , wherein the bismuth oxyhalide is selected from the group consisting of BiOCl claim 1 , BiOBr and BiOClBrwherein y is in the range from 0.5 to 0.95.9) A process according to claim 8 , wherein the bismuth oxyhalide is BiOClBrwherein y is in the range from 0.6 to 0.95.10) A process according to claim 1 , wherein the so-formed bismuth oxyhalide is doped with elemental bismuth Bi.11) A process according to claim 10 , wherein the bismuth oxyhalide is selected from the group consisting of:){'sup': '(0)', 'Bidoped-BiOCl;'}{'sup': '(0)', 'Bidoped-BiOBr ...

UV-PROTECTIVE COMPOSITIONS AND THEIR USE

Disclosed are compositions comprising inorganic UV-absorbing agents and the use of such compositions, in particular for protecting a subject or the surface of an inanimate object against a harmful effect of ultraviolet radiation. 1. A UV-protective composition which comprises particles of at least one inorganic UV-absorbing agent selected from the group consisting of (i) barium titanate (BaTiO) and (ii) bismuth vanadate (BiVO) , and which optionally comprises particles of an additional inorganic UV-absorbing agent selected from the group consisting of (iii) bismuth oxide (Bi2O) and (iv) doped zinc oxide (ZnO).2. The UV-protective composition according to claim 1 , wherein said at least one inorganic UV-absorbing agent is present in the composition as nanoparticles having at least one dimension of up to about 100 nm and said additional inorganic UV-absorbing agent claim 1 , if included claim 1 , is present in the composition as nanoparticles having at least one dimension of up to about 100 nm.3. The UV-protective composition according to or claim 1 , wherein at least 50% claim 1 , at least 90% claim 1 , at least 95% claim 1 , at least 97.5% or at least 99% of the number or of the volume of nanoparticles of the inorganic UV-absorbing agent(s) and/or of the additional inorganic UV-absorbing agent(s) claim 1 , if included claim 1 , present in the composition have each independently at least one dimension of up to about 100 nm.4. The UV-protective composition of claim 3 , wherein at least 90% of the number or the volume of nanoparticles of the inorganic UV-absorbing agent(s) and/or of the additional inorganic UV-absorbing agent(s) claim 3 , if included claim 3 , present in the composition have each independently at least one dimension of up to about 100 nm.5. The UV-protective composition of claim 4 , wherein at least 95% of the number or the volume of nanoparticles of the inorganic UV-absorbing agent(s) and/or of the additional inorganic UV-absorbing agent(s) claim 4 , ...

TWO-DIMENSIONAL (2D) BISMUTH NANOCOMPOSITE, AND PREPARATION METHOD AND USE THEREOF

The disclosure relates to a two-dimensional (2D) bismuth nanocomposite, and a preparation method and use thereof, and belongs to the field of nanobiotechnology. The 2D bismuth nanocomposite of the disclosure is an ultra-thin bismuth nanosheet that is loaded with platinum nanoparticles and modified with indocyanine green (ICG) and surface targeting polypeptide Ang-2. The 2D bismuth nanocomposite Bi@Pt/ICG-Ang2 of the disclosure can not only realize the targeted photothermal and photodynamic combination therapy for tumors, but also realize the dual-mode imaging combining CT and fluorescence imaging. 1. A two-dimensional (2D) bismuth nanocomposite , the 2D bismuth nanocomposite comprising:an ultra-thin bismuth nanosheet that is loaded with platinum nanoparticles and modified with indocyanine green (ICG) and surface targeting polypeptide Ang-2, wherein the ultra-thin bismuth nanosheet has a thickness of 1 nm to 5 nm.2. The 2D bismuth nanocomposite according to claim 1 , wherein claim 1 , the ultra-thin bismuth nanosheet has an irregular shape claim 1 , and a length of 10 nm to 300 nm.3. A method for preparing the 2D bismuth nanocomposite according to claim 1 , the method comprising the following steps:1) mixing a bismuth powder with an exfoliation solvent, and then grinding a resulting mixture to obtain a bismuth particle solution;2) subjecting the bismuth particle solution obtained in step 1) to probe ultrasonic exfoliation in an ice bath and then to a first centrifugation, and collecting a resulting supernatant to obtain an ultra-thin bismuth nanosheet solution; subjecting the ultra-thin bismuth nanosheet solution to a second centrifugation, and collecting a resulting precipitate to obtain a bismuth nanosheet; adding water to the bismuth nanosheet to obtain a bismuth nanosheet solution; and subjecting the bismuth nanosheet solution to lyophilization to obtain a bismuth nanosheet powder;3) placing the bismuth nanosheet powder obtained in step 2) in an atomic deposition ...

Battery with Novel Components

A battery cell having an anode or cathode comprising an acidified metal oxide (“AMO”) material, preferably in monodisperse nanoparticulate form 20 nm or less in size, having a pH<7 when suspended in a 5 wt % aqueous solution and a Hammett function H>−12, at least on its surface. 1. A battery cell comprising an anode , an electrolyte , and a cathode , wherein one of the anode or cathode comprises at least one solid metal oxide nanomaterial including a surface that is acidic but not superacidic , the surface having a pH<5 when re-suspended , after drying , in water at 5 wt % and a Hammet function H>−12.2. The battery cell of claim 1 , wherein the solid metal oxide nanomaterial has at least one particle dimension <100 nm in size.3. The battery cell of claim 1 , wherein the solid metal oxide nanomaterial has at least one particle dimension <20 nm in size.4. The battery cell of claim 1 , wherein the solid metal oxide nanomaterial has at least one particle dimension <10 nm in size.5. The battery cell of claim 1 , wherein the solid metal oxide nanomaterial includes a substantially monodispersed nanoparticulate form.6. The battery cell of claim 1 , wherein the surface has a pH<4 when re-suspended claim 1 , after drying claim 1 , in water at 5 wt % and a Hammet function H>−12.7. The battery cell of claim 1 , wherein the surface has a pH<3 when re-suspended claim 1 , after drying claim 1 , in water at 5 wt % and a Hammet function H>−12.8. A battery cell having an electrode comprising at least one solid metal oxide material claim 1 , wherein the metal oxide is surface functionalized with a material that is substantially monodispersed and provides acidic electron withdrawing groups having a molecular weight of less than 200.9. The battery cell of claim 8 , wherein the material that surface functionalizes the surface of the metal oxide is acidic but not superacidic claim 8 , having a pH<7 when suspended in an aqueous solution at 5 wt % and a Hammet function H>−12.10. The battery ...

AQUEOUS-BASED METHOD OF PREPARING METAL CHALCOGENIDE NANOMATERIALS

Provided is a method for producing metal chalcogenide nanomaterials, comprising the steps of forming an aqueous solution of a chalcogen precursor, a reducing agent and a metal salt; mixing the aqueous solution for a duration of time at a reaction temperature of between about 10° C. to about 40° C., inclusively; and separating the produced metal chalcogenide nanomaterials from the aqueous solution. Also provided is a method of converting metal chalcogenide nanoparticles into metal chalcogenide nanotubes or nanosheets, comprising the steps of forming an aqueous mixture of a chalcogen precursor, a reducing agent and the metal chalcogenide nanoparticles in water; and forming the nanotubes or nanosheets by stirring or not stirring the aqueous mixture, respectively. 1. A method for producing metal chalcogenide nanomaterials , comprising the steps of:forming an aqueous solution of a chalcogen precursor, a reducing agent and a metal salt;mixing the aqueous solution for a duration of time at a reaction temperature of between about 10° C. to about 40° C., inclusively; and,separating a produced metal chalcogenide nanomaterial from the aqueous solution.2. The method of claim 1 , wherein the metal chalcogenide nanomaterial is produced without use of a surfactant.3. The method of claim 1 , wherein the reaction temperature is between about 10° C. to about 30° C. claim 1 , inclusively.4. The method of claim 1 , wherein the reaction temperature is between about 20° C. to about 30° C. claim 1 , inclusively.5. The method of claim 1 , wherein the reaction temperature is about room temperature.6. The method of claim 5 , wherein external heating is not used.7. The method of claim 1 , wherein the produced metal chalcogenide nanomaterial has a formula of ME claim 1 , where:M is Bi, Cu, Pb, Ag, In, Sn, or Sb;E is O, S, Se or Te when M is Cu, or E is S, Se or Te when M is Bi, Pb, Ag, In, Sn, or Sb; and1≤x≤2 and 1≤y≤3.8. The method of claim 1 , wherein the produced metal chalcogenide ...

PHOTOCATALYTIC DEGRADATION OF PHARMACEUTICAL DRUGS AND DYES USING VISIBLE ACTIVE BIOX PHOTOCATALYST

Provided is a visible active photocatalyst of formula BiOX wherein X=P or S and process of preparation and use thereof. Use of the catalyst is demonstrated in the photocatalytic degradation of pharmaceutical drug pollutants and pollutant dyes using solar radiation or artificial radiation. 1. A visible active photocatalyst active in the visible and UV regions of the electromagnetic spectrum , of formula BiOX wherein X=P or S , said catalyst active for degradation of an organic compound.2. The visible active photocatalyst according to claim 1 , wherein the photocatalyst is selected from the group consisting of BiOS and BiOP.3. The visible active photocatalyst according to in porous particle form.4. The visible active photocatalyst according to claim 3 , wherein the photocatalyst is BiOS particles having a size in the range of from 80 nm to 240 nm claim 3 , and a surface area in the range of 100 to 110.2 m/g.5. The visible active photocatalyst according to claim 3 , wherein a BiOS photocatalyst has an average pore size of 3.95 nm and an average pore volume of 0.109 cm/g.6. A process for the preparation of visible active photocatalyst active in the visible and UV regions of the electromagnetic spectrum claim 3 , of formula BiOX wherein X=P or S claim 3 , said process comprising steps of:(a) adding bismuth (III) oxide to ethanol to form a mixture;(b) stirring the mixture of step (a) and adding concentrated sulfuric acid or phosphoric acid at 40° C. to form a reaction mixture;(c) sonicating the reaction mixture of step (b) for 1 hr; and(d) calcining the sonicated product of (c) at 500° C. for 12 hrs. to produce the photocatalyst.7. The process of wherein the product of step (c) is washed with ethanol or deionized water or alternately with ethanol and with deionized water and vacuum dried before calcination.8. A process of degrading at least one organic pollutant comprising: exposing the pollutant in liquid medium claim 6 , the pollutant in a concentration range of 1-1000 ...

DIELECTRIC COMPOSITION AND ELECTRIC COMPONENTS

The present invention relates to the dielectric composition including barium titanate, strontium titanate, titanium oxide and bismuth oxide. In case when the content of barium titanate, converted to BaTiO, is a mol %, the content of strontium titanate, converted to SrTiO, is b mol %, the content of titanium oxide and bismuth oxide, converted to BiTiO, is c mol %, and a+b+c=100, a, b and c are values within a scope surrounded by the following four points, i.e. point A, point B, point C and point D in a three-dimensional phase diagram. Point A: (a, b, c)=(52.1, 40.0, 7.9); point B: (a, b, c)=(86.5, 5.6, 7.9); point C: (a, b, c)=(91.0, 5.6, 3.4); point D: (a, b, c)=(56.6, 40.0, 3.4). 1. A dielectric composition comprising barium titanate , strontium titanate , titanium oxide and bismuth oxide , wherein{'sub': '3', 'a content of barium titanate, converted to BaTiO, is a mol %,'}{'sub': '3', 'a content of strontium titanate, converted to SrTiO, is b mol %,'}{'sub': 2', '3', '9, 'claim-text': {'br': None, 'i': 'a+b+c=', '100, and'}, 'a content of titanium oxide and bismuth oxide, converted to BiTiO, is c mol %,'}a, b and c are values within a scope surrounded by the following four points, point A, point B, point C and point D, in a three-dimensional phase diagram,point A: (a, b, c)=(52.1, 40.0, 7.9)point B: (a, b, c)=(86.5, 5.6, 7.9)point C: (a, b, c)=(91.0, 5.6, 3.4)point D: (a, b, c)=(56.6, 40.0, 3.4).2. The dielectric composition according to claim 1 , whereina, b and c are values within a scope surrounded by the following four points, point A′, point B, point C and point D′ in a three-dimensional phase diagram,point A′: (a, b, c)=(64.1, 28.0, 7.9)point B: (a, b, c)=(86.5, 5.6, 7.9)point C: (a, b, c)=(91.0, 5.6, 3.4)point D′: (a, b, c)=(70.8, 25.8, 3.4).3. The dielectric composition according to claim 1 , wherein{'sub': 2', '3', '9, 'the total content of the titanium oxide and the bismuth oxide, converted to BiTiO, is 100 wt %, and'}the titanium oxide and the bismuth ...

Additive Composition And Composition Binding Agent For Superhard Material And Preparation Thereof, And Self-Sharpening Diamond Grinding Wheel And Preparation Thereof

Disclosed are an additive raw material composition and an additive for superhard material product, a method for preparing the additive, a composite binding agent, a superhard material product, a self-sharpening diamond grinding wheel and a method for manufacturing the same. The raw material composition consisting of components in following mass percentage: Bi2O3 25%˜40%, B2O3 25%˜40%, ZnO 5%˜25%, SiO2 2%˜10%, Al2O3 2%˜10%, Na2CO3 1%˜5%, Li2CO3 1%˜5%, MgCO3 0%˜5%, and CaF2 1%˜5%. The composite binding agent is prepared from the additive and a metal composite binding agent. The self-sharpening diamond grinding wheel prepared from the composite binding agent has high self-sharpness, high strength, and fine texture, is uniformly consumed during the grinding process, does not need to be trimmed during the process of being used, and maintains good grinding force all the time, fundamentally solving the problems of long trimming time and high trimming cost of the diamond grinding wheel. 1. An additive raw material composition for a superhard material product , consisting of components in a mass percentage as follows:{'sub': 2', '3', '2', '3', '2', '2', '3', '2', '3', '2', '3', '3', '2, 'BiO25%˜40%, BO25%˜40%, ZnO 5%˜25%, SiO2%˜10%, AlO2%˜10%, NaCO1%˜5%, LiCO1%˜5%, MgCO0%˜5%, and CaF1%˜5%.'}2. An additive for a superhard material product , made from raw materials in a mass percentage as follows:{'sub': 2', '2', '3', '7', '2', '3', '2', '3', '2', '3', '3', '2, 'BiO 25%˜40%, BO25%˜40%, ZnO 5%˜25%, SiO2%˜10%, AlO2%˜10%, NaCO1%˜5%, LiCO1%˜5%, MgCO0%˜5%, and CaF1%˜5%.'}3. A method for preparing the additive according to claim 2 , comprising steps of:{'sub': 2', '3', '2', '3', '2', '2', '3', '2', '3', '2', '3', '3, '1) mixing BiO, BO, ZnO, SiO, AlO, NaCO, LiCO, and MgCOof the mass percentages, heating up to 1200˜1400° C. and keeping temperature for 1˜3 h to provide a mixture;'}{'sub': '2', '2) cooling the mixture obtained in Step 1) to 850˜950° C., adding CaFof the formula ratio ...

Battery with Novel Components

A battery cell having an anode or cathode comprising an acidified metal oxide (“AMO”) material, preferably in monodisperse nanoparticulate form 20 nm or less in size, having a pH<7 when suspended in a 5 wt % aqueous solution and a Hammett function H>−12, at least on its surface. 1. A battery cell having an electrode comprising at least one solid metal oxide material , wherein the metal oxide is surface functionalized with a material that is substantially monodispersed and provides acidic electron withdrawing groups having a molecular weight of less than 200.2. The battery cell of claim 1 , wherein the material that surface functionalizes the surface of the metal oxide is acidic but not superacidic claim 1 , having a pH<7 when suspended in an aqueous solution at 5 wt % and a Hammett function H>−12.3. The battery cell of claim 2 , wherein the material that surface functionalizes the surface of the metal oxide is acidic but not superacidic claim 2 , having a pH<5 when suspended in an aqueous solution at 5 wt % and a Hammett function H>−12 claim 2 , at least on its surface.4. The battery cell of claim 2 , wherein the acidic metal oxide comprises tin.5. The battery cell of claim 4 , wherein the acidic metal oxide comprising tin is surface-functionalized with chloride.6. The battery cell of claim 4 , wherein the acidic metal oxide comprising tin is surface functionalized with sulfate.7. The battery cell of claim 2 , wherein the acidic metal oxide comprises iron.8. The battery cell of claim 7 , wherein the acidic metal oxide comprising iron is surface functionalized with chloride.9. The battery cell of claim 7 , wherein the acidic metal oxide comprising iron is surface functionalized with sulfate. This is a divisional application claiming priority to U.S. patent application Ser. No. 15/949,805, filed Apr. 10, 2018, which claims the benefit of U.S. provisional patent application Ser. No. 62/483,789, filed on Apr. 10, 2017, entitled “Blended Acidified Metal Oxide Additive ...

SUBSTRATE-FREE CRYSTALLINE 2D BISMUTHENE

The present disclosure generally relates to compositions comprising substrate-free crystalline 2D bismuthene, and the method of making and using the substrate-free crystalline 2D bismuthene. 1. A composition comprising substrate-free crystalline 2D bismuthene nanoflakes.2. The composition of claim 1 , wherein the crystalline 2D bismuthene nanoflakes have single crystalline nature.3. The composition of claim 1 , wherein the crystalline 2D bismuthene nanoflakes have substantially equilateral triangle shape.4. The composition of claim 3 , wherein the length of each side of the substantially equilateral triangle shape is 0.1-100 μm.5. The composition of claim 1 , wherein the crystalline 2D bismuthene nanoflakes have multilayer structure with a thickness of 0.1-30 nm.6. The composition of claim 1 , wherein the crystalline 2D bismuthene nanoflakes are characterized by an X-ray diffraction pattern (CuKα radiation claim 1 , λ=1.54056 A) comprising a peak at 26.16 (2θ±0.1°) claim 1 , and optionally one or more peaks selected from the group consisting of 36.99 claim 1 , 38.64 claim 1 , 47.67 claim 1 , and 55.14 (2θ±0.1°).7. A method of preparing substrate-free crystalline 2D bismuthene nanoflakes claim 1 , wherein the method comprises reductive reaction of NaBiOwith a capping polymer and a polyol.8. The method of claim 7 , wherein the method comprises steps:dissolving the capping polymer in the polyol to form a mixture of the capping polymer and the polyol;heating the mixture to an elevated temperature for a period of time and then cooling the mixture to ambient temperature;{'sub': '3', 'adding NaBiOto the mixture of the capping polymer and the polyol, and heating the newly formed mixture to an elevated temperature for a period of time; and'}cooling the reaction mixture to ambient temperature to provide the substrate-free crystalline 2D bismuthene nanoflakes.9. The method of claim 7 , wherein the polyol is ethylene glycol claim 7 , the capping polymer is polyvinylpyrrolidone ...

Battery with Acidified Cathode and Lithium Anode

A battery comprising an acidified metal oxide (“AMO”) material, preferably in monodisperse nanoparticulate form 20 nm or less in size, having a pH <7 when suspended in a 5 wt % aqueous solution and a Hammett function H, at least on its surface. 1. A battery cell having an electrode comprising at least one solid metal oxide material , wherein the metal oxide is surface functionalized with a material that is substantially monodispersed and provides acidic electron withdrawing groups having a molecular weight of less than 200 , and having an opposing electrode comprising at least 50% metallic lithium when the battery cell is constructed.2. The battery cell of claim 1 , wherein the material that surface functionalizes the surface of the metal oxide is acidic but not superacidic claim 1 , having a pH <7 when suspended in an aqueous solution at 5 wt % and a Hammett function H>−12.3. The battery cell of claim 2 , wherein the material that surface functionalizes the surface of the metal oxide is acidic but not superacidic claim 2 , having a pH <5 when suspended in an aqueous solution at 5 wt % and a Hammett function H>−12.4. The battery cell of claim 2 , wherein the opposing electrode is 95% or greater metallic lithium when the battery cell is constructed.5. The battery cell of claim 2 , wherein a surface of the opposite electrode comprises pure metallic when the battery cell is constructed.6. The battery cell of claim 2 , wherein at least a geometric portion of the opposing electrode consists of metallic lithium when the battery cell is constructed.7. A battery cell having a cathode comprising a solid metal oxide nanomaterial being in a form MOG claim 2 , where Mis a metal claim 2 , Ois total oxygen claim 2 , MOis a metal oxide claim 2 , G is at least one electron-withdrawing surface group claim 2 , and “/” makes a distinction between the metal oxide and the electron-withdrawing surface group claim 2 , the battery electrode solid metal oxide nanomaterial having a pH<5 when ...

Lead-based alloy and related processes and products

A lead-based alloy containing alloying additions of bismuth, antimony, arsenic, and tin is used for the production of doped leady oxides, lead-acid battery active materials, lead-acid battery electrodes, and lead-acid batteries.

Hydrothermal Synthesis of Bismuth Germanium Oxide

A method for the hydrothermal synthesis of bismuth germanium oxide comprises dissolving a bismuth precursor (e.g., bismuth nitrate pentahydrate) and a germanium precursor (e.g., germanium dioxide) in water and heating the aqueous solution to an elevated reaction temperature for a length of time sufficient to produce the eulytite phase of bismuth germanium oxide (E-BGO) with high yield. The E-BGO produced can be used as a scintillator material. For example, the air stability and radioluminescence response suggest that the E-BGO can be employed for medical applications. 1. A method for the hydrothermal synthesis of bismuth germanium oxide , comprising;dissolving a bismuth precursor and a germanium precursor in water to provide an aqueous solution, andheating the aqueous solution to a reaction temperature for a length of time sufficient to produce an eulytite phase of bismuth germanium oxide.2. The method of claim 1 , wherein the bismuth precursor comprises bismuth nitrate or bismuth acetate.3. The method of claim 2 , wherein the bismuth nitrate comprises bismuth nitrate pentahydrate.4. The method of claim 1 , wherein the germanium precursor comprises germanium dioxide.5. The method of claim 1 , wherein an amount of germanium precursor in excess of the stoichiometric amount is dissolved in the aqueous solution.6. The method of claim 5 , wherein the excess germanium precursor is removed from the bismuth germanium oxide produced by washing with water or by thermal treatment.7. The method of claim 1 , wherein the aqueous solution is heated to a reaction temperature in the range of 150 to 200° C.8. The method of claim 7 , wherein the reaction temperature is about 185° C.9. The method of claim 8 , wherein the aqueous solution is heated to about 185° C. for a length of time greater than 12 hours.10. The method of claim 1 , wherein the eulytite phase of bismuth germanium oxide is produced with a yield of greater than about 80%.11. The method of claim 1 , further comprising ...

DOUBLE PEROVSKITE

The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B]; (iii) one or more trications [B]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B] selected from Cu, Ag and Au; (iii) one or more trications [B]; and (iv) one or more halide anions [X]. 138-. (canceled)39. A semiconductor device comprising a semiconducting material , wherein the semiconducting material comprises a double perovskite compound of formula (Ia):{'br': None, 'sub': 2', '6, 'sup': I', 'III, 'ABB[X]\u2003\u2003(Ia);'} [{'sup': +', '+', '+, 'sub': 3', '3', '2', '2, 'A is one first monocation which is Cs, (CHNH) or (HN—C(H)═NH);'}, {'sup': I', '+', '+', '+', '+, 'Bis one second monocation which is Cu, Ag, Au or Hg;'}, {'sup': III', '3+', '3+, 'Bis one trication which is Sb or Bi; and'}, '[X] one or more halide anions., 'wherein40. The semiconductor device according to claim 39 , wherein the one or more first monocations [A] are selected from metal monocations and organic monocations.41. The semiconductor device according to claim 39 , wherein the first monocation A is (CHNH) or (CHCHNH).42. The semiconductor device according to claim 39 , wherein the second monocation Bis Cu claim 39 , Ag or Au.43. The semiconductor device according to claim 39 , wherein the trication Bis Bi.44. The semiconductor device according to claim 39 , wherein the one or more halide anions [X] are selected from I claim 39 , Br claim 39 , Cl and F.45. The semiconductor device according to claim 39 , wherein the one or more halide anions [X] are selected from I and Br.46. The semiconductor device according to claim 39 , ...

MIXED BISMUTH AND COPPER OXIDES AND SULPHIDES FOR PHOTOVOLTAIC USE

The present invention relates to the use of a material comprising at least one compound of formula (I): BiCuOSSeTe(I), where 0≦z≦0.2; 0≦a≦2; 0≦b≦2; 0≦c≦2; 0≦d≦2; and a+b+c+d=2, as a p-type semiconductor, for providing a photocurrent. The invention also relates to the photovoltaic devices using these semiconductors. 2. The method of claim 1 , in which z=0 claim 1 , a=1 claim 1 , b=1 claim 1 , c=0 and d=0.3. The either method of claim 1 , in which the compound of formula (I) is used in the form of isotropic or anisotropic objects having at least one dimension of less than 50 μm.4. The method of claim 3 , in which the compound of formula (I) is used in the form of particles with dimensions of less than 10 μm.5. The method of claim 4 , in which the compound of formula (I) is in the form of anisotropic particles of platelet type claim 4 , or of agglomerates of a few dozen to a few hundred particles of this type.6. The method of claim 3 , in which the compound of formula (I) is in the form of a continuous layer based on a compound of formula (I) whose thickness is less than 50 μm claim 3 , in which the layer based on a compound of formula (I) is a layer comprising compound of formula (I) in a proportion of at least 95% by mass.7. The method of claim 3 , in which the compound of formula (I) is in the form of a continuous layer based on a compound of formula (I) whose thickness is less than 50 μm claim 3 , in which the layer based on a compound of formula (I) comprises a polymer matrix and claim 3 , dispersed in this matrix claim 3 , particles based on a compound of formula (I) with dimensions of less than 5 μm.9. A process for preparing particles with dimensions of less than 5 μm based on BiCuOSin which 0≦z≦0.2; 0≦a<2; 0≦b<2 which process comprises the following steps:(a) supplying a mixture of bismuth and copper mineral compounds in dispersed form, and a source of sulphur;(b) dissolving the mixture in water or an aqueous medium under hydrothermal conditions; and{'sub': 1− ...

METAL CHALCOGENIDE SYNTHESIS METHOD AND APPLICATIONS

A method for synthesizing a metal chalcogenide nanocrystal (NC) material includes reacting a metal material and an ammonium chalcogenide material in an organic solvent material. The method provides that the metal chalcogenide nanocrystal material may be synthesized by a heating-up method at large scale (i.e., greater than 30 grams). Ammonium chalcogenide salts exhibit high reactivity and metal chalcogenide nanocrystals can be synthesized at low temperatures (i.e., less than 200° C.) with high conversion yields (i.e., greater than 90 percent). 1. A synthetic method comprising reacting in an organic solvent material a metal material and an ammonium chalcogenide material to form a metal chalcogenide nanocrystal material.2. The method of wherein the organic solvent material comprises an anhydrous organic solvent material.3. The method of wherein the reacting produces greater than 30 grams of metal chalcogenide nanocrystal material in a single reaction batch.4. The method of wherein the metal chalcogenide nanocrystal material has a monodispersity less than 10 percent.5. The method of wherein the metal material is selected from the group consisting of a metal oxide claim 1 , a metal coordination complex and a metal salt.6. The method of wherein the metal material comprises a metal cation selected from the group consisting of Ti claim 5 , Mn claim 5 , Fe claim 5 , Co claim 5 , Ni claim 5 , Cu claim 5 , Zn claim 5 , Ga claim 5 , Mo claim 5 , Ag claim 5 , Cd claim 5 , In claim 5 , Sn claim 5 , Sb claim 5 , W claim 5 , Hg claim 5 , Pb claim 5 , and Bi metal cations.7. The method of wherein the metal salt comprises an anion selected from the group consisting of carboxylate claim 5 , diketonate claim 5 , halide claim 5 , perchlorate and amide anions.8. The method of wherein the ammonium chalcogenide is selected from the group consisting of ammonium sulfide claim 1 , ammonium selenide and ammonium telluride.9. The method of wherein the reacting is undertaken at a temperature ...

PHOTOCHROMIC NANOMATERIAL CAPABLE OF BLOCKING ULTRAVIOLET RAYS, PRODUCTION METHOD AND USE THEREOF

The present disclosure provides a photochromic nanomaterial capable of blocking ultraviolet rays with a general formula of MOX, a production method and use thereof, wherein the M, O and X and a, b and c are as defined herein. The nanomaterial may be prepared by the following method: heating a mixture of an M-containing cation source compound, a polyol, a surfactant and first solvent under agitation, to obtain a hot first solution; mixing an X-containing anion source compound and a second solvent, to obtain a second solution; injecting the second solution into the hot first solution, to perform a reaction and obtain a reaction mixture; and subjecting the reaction mixture to post-treatment. The nanomaterial of the present disclosure can block 80% or more of UV rays, in particular, may change to a transparent dark color and reduce the transmittance under irradiation by strong light, whereas may restore colorless transparent state under irradiation by weak or non-strong light. Additionally, the present disclosure may have following features: a simple processing flow, low cost, high productivity, applicability in the industrial production, etc. 1. A photochromic nanomaterial capable of blocking ultraviolet rays with a general formula of MOX , wherein M represents one or more selected from tin , indium , antimony and bismuth , or one or more selected from tin , indium , antimony and bismuth in combination with one or more selected from titanium , barium , nickel , vanadium , zinc and copper; O represents an oxygen atom; X represents one or more selected from a tungstate radical moiety , a molybdate radical moiety , a vanadate radical moiety , fluorine , chlorine , bromine and iodine that are able to form a compound with the (MO) moiety in the general formula MOX , or one or more selected from a tungstate radical moiety , a molybdate radical moiety , a vanadate radical moiety , fluorine , chlorine , bromine and iodine that are able to form a compound with the (MO) moiety ...

ROOM TEMPERATURE STABLE DELTA-PHASE BISMUTH(III) OXIDE

Provided is room temperature stable δ-phase BiO. Ion conductive compositions comprise at least 95 wt % δ-phase BiO, and, at 25° C., the compositions are stable and have a conductivity of at least 10S/cm. Related methods, electrochemical cells, and devices are also disclosed. 1. An ion conductive composition comprising δ-phase BiO , wherein the composition comprises at least 95 wt % BiOand , at 25° C. , the composition is stable and has a conductivity of at least 10S/cm.2. The composition according to claim 1 , wherein said composition is stable for at least one year at 25° C.3. The composition according to claim 1 , said composition comprising greater than or equal to 99 wt % of the δ-phase BiO.4. The composition according to claim 1 , said composition comprising greater than 99.9 mole % of the δ-phase BiO.5. The composition according to claim 1 , wherein said composition does not comprise titanium claim 1 , manganese claim 1 , lead claim 1 , yttrium claim 1 , or erbium.6. The composition according to claim 1 , wherein said composition is pinhole free.7. The composition according to claim 1 , wherein at least 99 vol % of said composition is pinhole free.8. The composition according to claim 1 , having a conductivity of 10to 10S/cm.9. The composition according to claim 1 , wherein said composition is free of any secondary BiOphases.10. The composition according to claim 1 , having a grain size of 4 nm to 1 claim 1 ,000 claim 1 ,000 nm.11. A film comprising the composition according to .12. The film according to claim 11 , having a thickness of 10 nm to 10 claim 11 ,000 nm.13. An electrochemical device comprising the composition according to .14. The electrochemical device according to claim 13 , wherein the composition is in the form of a monolithic film.15. The electrochemical device according to claim 13 , wherein said device comprises a solid oxide fuel cell (SOFC) claim 13 , an oxygen sensor claim 13 , or a metal-air battery.16. A method of making the composition ...

DIELECTRIC MATERIAL, METHOD OF MANUFACTURING THEREOF, AND DIELECTRIC DEVICES AND ELECTRONIC DEVICES INCLUDING THE SAME

A dielectric material, a method of manufacturing thereof, and a dielectric device and an electronic device including the same. A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of the monolayer nanosheets, or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure and the two-dimensional layered material is represented by Chemical Formula 1. 1. A dielectric material , comprisinga layered metal oxide comprising a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of the monolayer nanosheets, or a combination thereof,wherein the dielectric material comprises a two-dimensional layered material having a two-dimensional crystal structure, and {'br': None, 'sub': m', '(n-1-d)', 'n', '(3n+1), 'X[AB′O]\u2003\u2003Chemical Formula 1'}, 'the two-dimensional layered material is represented by Chemical Formula 1'}{'sub': 2', '2, 'wherein in Chemical Formula 1, X comprises H, BiO, a cationic compound, or a combination thereof,'}A comprises Bi, Ba, Ca, Pb, Sr, or a combination thereof,B′ comprises W, Mo, Cr, Ta, Nb, Ti, or a combination thereof,1≤m≤2, n≥1, 0≤d≤1, and n-1-d≥0.2. The dielectric material of claim 1 , wherein the monolayer nanosheet comprises a second layer exfoliated from the layered metal oxide.3. The dielectric material of claim 2 , wherein the monolayer nanosheet comprises the cationic compound attached to a surface of the second layer.4. The dielectric material of claim 1 , wherein the two-dimensional layered material has an average longitudinal diameter of about 0.1 micrometers to about 100 micrometers.5. The dielectric material of claim 1 , ...

TUNGSTEN OXIDE PRIMER COMPOSITIONS

A primer composition is provided having a primary explosive and an oxidizer system containing at least one tungsten oxide or one tungstate compound. The oxidizer system can by non-hydroscopic and non-toxic. The primer can include reducing agents, sensitizers, binders and gas producing agents. The primer composition generally is applicable to any application or device that employs ignition of a propellant, a fuel, a relay charge, a delay charge, or a booster charge, including, but not limited to, air bag gas generator systems, signaling devices, ejection seats, small, medium or large arms ammunition primers, and the like. 2. A primer composition comprising:a. no more than about 70% by weight of a percussion-sensitive organic primary explosive compound;b. from about 15% to about 50% by weight of a oxidizer;c. from about 5% to about 30% by weight of a reducing agent;d. from 0% to about 30% by weight of a sensitizer;e. from 0% to about 25% by weight of a gas producing agent;f. from 0% to about 20% by weight of a friction agent;g. from 0% to about 10% by weight of a decoppering agent; andh. from 0% to about 20% by weight of a conductive component.3. The primer composition of claim 2 , wherein the percussion-sensitive organic primary explosive compound comprises a compound chosen from salts of trinitroresorcinol claim 2 , dinitrobenzofuroxan (DNBF) claim 2 , potassium dinitrobenzofuroxane (KDNBF) claim 2 , diazodinitrophenol (DDNP) claim 2 , lead azide claim 2 , silver azide claim 2 , salts of fulminate claim 2 , salts of hydrazoic acid claim 2 , salts of 5-nitrotetrazole claim 2 , tetrazene claim 2 , salts of tetrazene claim 2 , salts of amino guanidine claim 2 , salts of cyanamide claim 2 , nitrocyanamide salts claim 2 , nitrophenol salts claim 2 , nitrosophenol salts nitramine salts claim 2 , salts of metazonic acid claim 2 , oxalic salts claim 2 , peroxides claim 2 , acetylide salts claim 2 , nitrogen sulphide claim 2 , nitrogen selenide claim 2 , thiocyanic salts ...

Bismuth-based energetic materials

Energetic compounds based on bismuth salts with reduced toxicity that are obtained through the reaction of soluble bismuth salts with soluble salts of organic or inorganic energetic compounds based on azides, derivatives aromatic nitro compounds or nitrogenous heterocyclic compounds, together with the methods for their preparation and application.

X-RAY SHIELDING MATERIAL AND METHOD OF PREPARATION THEREOF

The present disclosure relates to a process for synthesis of barium bismuth sulfide nanofibers, having equivalent shielding capacity as lead. The present disclosure also relates to a radiation shielding articles and cosmeceuticals. 1. A process for synthesis of barium bismuth sulfide nanofibers , said process comprising the following steps;a. dissolving barium nitrate, bismuth nitrate pentahydrate and thiourea in a solvent system to obtain a dispersion containing complex of barium bismuth sulfide; andb. mixing at least one surfactant in the dispersion under continuous agitation to obtain a mixture;c. heating the mixture at a temperature ranging between 120° C. and 180° C. in an apparatus for 24 hours followed by cooling at a temperature ranging between 20° C. and 30° C. to obtain a precipitate; andd. washing the precipitate by employing at least one solvent selected from the group consisting of water, ethanol, methanol, isopropanol and acetone to obtain nanofibers of barium bismuth sulfide.2. The process as claimed in claim 1 , wherein the solvent system is a combination of ethylene glycol and water at a proportion ranging between 1:1 and 3:1.3. The process as claimed in claim 1 , wherein the surfactant is at least one selected from the group consisting of cetyl trimethylammonium bromide claim 1 , polyvinyl alcohol and polyethylene glycol p-(1 claim 1 ,1 claim 1 ,3 claim 1 ,3-tetramethylbutyl)-phenyl ether.4. The process as claimed in claim 1 , wherein the average diameter of the nanofibers is between 20 nm and 50 nm.5. The process as claimed in claim 1 , wherein the average length of the nanofibers is between of 1 μm and 3 μm.6. Barium bismuth sulfide nanofibers obtained by the process as claimed in ; said nanofibres characterized by (a) diameter of 20 nm to 50 nm and (b) the length of 1 μm to 3 μm and the X-Ray diffraction pattern having 20 values at 28.58 claim 1 , 24.95 claim 1 , 46.52 claim 1 , 31.82 claim 1 , 52.7 claim 1 , 45.53 claim 1 , 32.87 claim 1 , 39. ...

Double perovskite

The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B I ]; (iii) one or more trications [B III ]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B I ] selected from Cu + , Ag + and Au + ; (iii) one or more trications [B III ]; and (iv) one or more halide anions [X].

Battery with Novel Components

A battery cell having an anode or cathode comprising an acidified metal oxide (“AMO”) material, preferably in monodisperse nanoparticulate form 20 nm or less in size, having a pH<7 when suspended in a 5 wt % aqueous solution and a Hammett function H>−12, at least on its surface. 1. A battery cell comprising an anode , an electrolyte , and a cathode , wherein one of the anode or cathode comprises at least one solid metal oxide nanomaterial including a surface that is acidic but not superacidic , the surface having a pH<5 when re-suspended , after drying , in water at 5 wt % and a Hammet function H>−12.2. The battery cell of claim 1 , wherein the solid metal oxide nanomaterial has at least one particle dimension <100 nm in size.3. The battery cell of claim 1 , wherein the solid metal oxide nanomaterial has at least one particle dimension <20 nm in size.4. The battery cell of claim 1 , wherein the solid metal oxide nanomaterial has at least one particle dimension <10 nm in size.5. The battery cell of claim 1 , wherein the solid metal oxide nanomaterial includes a substantially monodispersed nanoparticulate form.6. The battery cell of claim 1 , wherein the surface has a pH<4 when re-suspended claim 1 , after drying claim 1 , in water at 5 wt % and a Hammet function H>−12.7. The battery cell of claim 1 , wherein the surface has a pH<3 when re-suspended claim 1 , after drying claim 1 , in water at 5 wt % and a Hammet function H>−12.8. A battery cell having an electrode comprising at least one solid metal oxide material claim 1 , wherein the metal oxide is surface functionalized with a material that is substantially monodispersed and provides acidic electron withdrawing groups having a molecular weight of less than 200.9. The battery cell of claim 8 , wherein the material that surface functionalizes the surface of the metal oxide is acidic but not superacidic claim 8 , having a pH<7 when suspended in an aqueous solution at 5 wt % and a Hammet function H>−12.10. The battery ...

APPARATUS EXPOSBLE IN BYPRODUCE CARCONACEOUS MATERIAL FORMATION ENVIRONMENT AND ASSOCIATED METHOD

An apparatus has a surface exposable to a byproduct carbonaceous material formation environment and comprising a perovskite material having an ABOperovskite structure and being of formula ABO, wherein 0.9 Подробнее

AMORPHOUS INORGANIC ANION EXCHANGER, RESIN COMPOSITION FOR ELECTRONIC COMPONENT SEALING, AND PROCESS FOR PRODUCING AMORPHOUS BISMUTH COMPOUND

The object is to provide an amorphous inorganic anion exchanger having excellent anion exchangeability and suppressed corrosivity toward metals and to provide a production process that can produce an amorphous bismuth compound having excellent anion exchangeability and suppressed corrosivity toward metals. 1. An amorphous inorganic anion exchanger , represented by Formula (1) , havingan average primary particle size observed with an electron microscope of at least 1 nm but no greater than 500 nm, and{'sub': '3', 'claim-text': {'br': None, 'BiO(OH)\u2003\u2003(1).'}, 'an NOcontent of no greater than 1 wt % of the whole,'}2. The amorphous inorganic anion exchanger according to claim 1 , wherein the specific surface area by the BET method is at least 10 m/g.3. The amorphous inorganic anion exchanger according to claim 1 , wherein the median diameter on a volume basis measured by a laser diffraction type particle size distribution analyzer is within the range 0.01 μM to 20 μM.4. The amorphous inorganic anion exchanger according to claim 1 , wherein the maximum particle size measured by a laser diffraction type particle size distribution analyzer is no greater than 20 μm.5. The amorphous inorganic anion exchanger according to claim 1 , wherein the anion exchange capacity is at least 2.0 meq/g.6. The amorphous inorganic anion exchanger according to claim 1 , wherein the anion exchange rate at 25° C. for 10 minutes is at least 2.5 meq/g.7. The amorphous inorganic anion exchanger according to claim 1 , wherein a suspension thereof in deionized water has a supernatant conductivity of no greater than 50 μS/cm.8. A resin composition for electronic component sealing claim 1 , comprising the amorphous inorganic anion exchanger according to .9. The resin composition for electronic component sealing according to claim 8 , wherein the resin composition further comprises an inorganic cation exchanger.10. A resin for electronic component sealing that is formed by curing the resin ...

PHOTOCATALYSTS BASED ON BISMUTH OXYHALIDE, PROCESS FOR THEIR PREPARATION AND USES THEREOF

The invention provides a process for the preparation of bismuth oxyhalide, comprising a precipitation of bismuth oxyhalide in an acidic aqueous medium in the presence of a reducing agent. Also provided are bismuth oxyhalide compounds doped with elemental bismuth Bi. The use of Bidoped-bismuth oxyhalide as photocatalysts in water purification is also described. 1. Bi-doped bismuth oxyhalide , wherein the halide is chloride , bromide or mixed chloride-bromide , wherein the molar concentration of the Bidopant is from 0.1 to 7.0% , calculated relative to the total amount of the trivalent and zerovalent bismuth.2. Bi-doped bismuth oxyhalide according to claim 1 , wherein the molar concentration of the Bidopant is from 0.1 to 5.0%.3. Bi-doped bismuth oxyhalide according to claim 1 , selected from the group consisting of Bidoped-BiOCl claim 1 , Bidoped-BiOBr and Bidoped-BiOClBrwherein y is in the range from 0.6 to 0.95.4. Bi-doped bismuth oxyhalide according to claim 3 , which is Bidoped-BiOClBrwherein y is in the range from 0.7 to 0.95.5. Bi-doped bismuth oxyhalide according to claim 1 , characterized in that its X-ray photoelectron emission spectrum exhibits a peak at 157±1 eV assigned to metallic bismuth. This application is a divisional of U.S. application Ser. No. 14/910,202 filed Feb. 4, 2016, which is the U.S. national phase of International Application No. PCT/IL2014/050702 filed Aug. 4, 2014, which designated the U.S. and claims the benefit of U.S. Provisional Application Nos. 62/007,946 filed Jun. 5, 2014 and 61/862,101 filed Aug. 5, 2013, the entire contents of each of which are hereby incorporated by reference.Compounds exhibiting photocatalytic activity are capable of accelerating oxidation reactions in response to light irradiation and are hence potentially useful in decomposing organic contaminants present in water. The TiOpowder manufactured by Degussa Corporation under the name P-25 is an example of a commercially available photocatalyst.Bismuth oxyhalides ...

Lead-based alloy and related processes and products

A lead-based alloy containing alloying additions of bismuth, antimony, arsenic, and tin is used for the production of doped leady oxides, lead-acid battery active materials, lead-acid battery electrodes, and lead-acid batteries.

DIELECTRIC FILM, ELECTRONIC COMPONENT, THIN FILM CAPACITOR, AND ELECTRONIC CIRCUIT BOARD

This dielectric film is a dielectric film comprising an oxide having a perovskite structure. The oxide comprises (1) Bi, Na and Ti, (2) at least one of Ba and Ca, and (3) at least one element Ln selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Yb and Y. When ratios of the numbers of atoms of Bi, Ba and Ca to the total of the numbers of atoms of Bi, Na, Ba and Ca in the oxide are represented by X, Xand X, respectively, the ratios satisfy 0.2≤X/(X+X)≤5. 1. A dielectric film comprising an oxide having a perovskite structure , whereinthe oxide comprises:(1) Bi, Na and Ti;(2) at least one of Ba and Ca; and(3) at least one element Ln selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Yb and Y, and{'sub': Bi', 'Ba', 'Ca, 'claim-text': {'br': None, 'i': X', 'X', '+X, 'sub': Bi', 'Ba', 'Ca, '0.2≤/()≤5.'}, 'when ratios of the numbers of atoms of Bi, Ba and Ca to the total of the numbers of atoms of Bi, Na, Ba and Ca in the oxide are represented by X, Xand X, respectively, the ratios satisfy'}2. The dielectric film according to claim 1 , wherein when a ratio of the number of atoms of Na to the total of the numbers of atoms of Bi claim 1 , Na claim 1 , Ba and Ca in the oxide is represented by X claim 1 , the ratio satisfies{'br': None, 'i': X', '≤X', 'X, 'sub': Bi', 'Na', 'Bi, '0.9≤1.1.'}3. The dielectric film according to claim 1 , wherein a ratio of the number of atoms of Ti to the total of the numbers of atoms of Bi claim 1 , Na claim 1 , Ba and Ca in the oxide is 80% or more and 120% or less.4. The dielectric film according to claim 1 , wherein a ratio of the number of atoms of Ln to the total of the numbers of atoms of Bi claim 1 , Na claim 1 , Ba and Ca in the oxide is 0.5 to 20%.5. A dielectric film comprising an oxide having a perovskite structure claim 1 , whereinthe oxide comprises:(1) Bi, K and Ti;(2) at least one selected from the group consisting of Ba, Sr and Ca; and(3) at least one element Ln selected from ...

Plasma-processing detection indicator in which metal oxide fine particles are used as color-change layer

The present invention provides a plasma treatment detection indicator including a color-changing layer that changes color by plasma treatment, exhibiting excellent heat resistance, with the gasification of the color-changing layer or the scattering of the fine debris of the color-changing layer caused by the plasma treatment being suppressed to the extent that electronic device properties are not affected. Specifically, the present invention provides a plasma treatment detection indicator comprising a color-changing layer that changes color by plasma treatment, the color-changing layer comprising metal oxide fine particles containing at least one element selected from the group consisting of Mo, W, Sn, V, Ce, Te, and Bi, the metal oxide fine particles having a mean particle size of 50 μm or less.

MULTI-ELEMENT PEROVSKITE MATERIAL AS WELL AS PREPARATION AND LUMINESCENT APPLICATION THEREOF

The present invention discloses a multi-element perovskite material, and a single crystal, powder and a film thereof, as well as the applications thereof in photoluminescence and electroluminescence, in which the multi-element perovskite material is a multi-element fully-inorganic salt of non-lead metal halide and has a perovskite structure; and the chemical formula of the multi-element perovskite material is CsNaAgInBiCl, wherein 0≤x≤1, 0≤y≤1. Meanwhile, based on the very strong self-trapped excitors states of the double perovskite, the present invention proposes a high-efficiency single-phase broadband phosphor and an electroluminescent device.

LEAD-FREE DOUBLE PEROVSKITES FOR PHOTOVOLTAIC APPLICATIONS

The present disclosure is directed to double perovskite oxide semiconductors. In particular, the present disclosure is directed to lead-free double perovskite oxides that provide excellent stability and are used, for example, as photovoltaic materials.

Sorting Two-Dimensional Nanomaterials by Thickness

The Present teachings provide, in part, methods of separating two-dimensional nanomaterials by atomic layer thickness. In certain embodiments, the present teachings provide methods of generating graphene nanomaterials having a controlled number of atomic layer(s).

SOLID ELECTROLYTE MATERIAL AND BATTERY

A solid electrolyte material contains Li, M, and X. M is at least one selected from metallic elements, and X is at least one selected from the group consisting of Cl, Br, and I. A plurality of atoms of X form a sublattice having a closest packed structure. An average distance between two adjacent atoms of X among the plurality of atoms of X is 1.8% or more larger than a distance between two adjacent atoms of X in a rock-salt structure composed only of Li and X. 1. A solid electrolyte material comprising:Li, M, and X, whereinM is at least one selected from metallic elements,X is at least one selected from the group consisting of Cl, Br, and I,a plurality of atoms of X form a sublattice having a closest packed structure, andan average distance between two adjacent atoms of X among the plurality of atoms of X is 1.8% or more larger than a distance between two adjacent atoms of X in a rock-salt structure composed only of Li and X.2. The solid electrolyte material according to claim 1 , wherein{'sup': −1', '−1, 'a first converted pattern, which is obtained by converting an X-ray diffraction pattern of the solid electrolyte material such that a horizontal axis represents, instead of diffraction angle 2θ, q, includes a reference peak in a range of q of 2.11 Åor more and 2.31 Åor less,'}q=4π sin θ/λ where λ is a wavelength of an X-ray,{'sub': 2', '2', '2', '2, 'a second converted pattern, which is obtained by converting the X-ray diffraction pattern such that the horizontal axis represents, instead of diffraction angle 2θ, q/q, includes a peak in at least one selected from the group consisting of a first range of q/qof 0.50 or more and 0.52 or less, a second range of q/qof 1.28 or more and 1.30 or less, and a third range of q/qof 1.51 or more and 1.54 or less, and'}{'sub': '2', 'qis a value of q corresponding to the reference peak in the first conversion pattern.'}3. The solid electrolyte material according to claim 2 , wherein claim 2 , in the second conversion pattern ...

Additive Raw Material Composition and Additive for Superhard Material Product, Preparation Method of the Additive, Composite Binding Agent and Superhard Material Product, Self-Sharpening Diamond Grinding Wheel and Preparation Method of the Same

Disclosed are an additive raw material composition and an additive for superhard material product, a composite binding agent, a superhard material product, a self-sharpening diamond grinding wheel and a method for manufacturing the same. The raw material composition consisting of components in following mass percentage: BiO25%˜40%, BO25%˜40%, ZnO 5%˜25%, SiO2%˜10%, AlO2%˜10%, NaCO1%˜5%, LiCO1%-5%, MgCO0%˜5%, and CaF1%˜5%. The composite binding agent is prepared from the additive and a metal composite binding agent. The self-sharpening diamond grinding wheel prepared from the composite binding agent has high self-sharpness, high strength, and fine texture, is uniformly consumed during the grinding process, does not need to be trimmed during the process of being used, and maintains good grinding force all the time, fundamentally solving the problems of long trimming time and high trimming cost of the diamond grinding wheel (FIG. ). 1. An additive for a superhard material product , made from raw materials in a mass percentage as follows:{'sub': 2', '3', '2', '3', '2', '2', '3', '2', '3', '2', '3', '3', '2, 'BiO25%˜40%, BO25%˜40%, ZnO 5%˜25%, SiO2%˜10%, AlO2%˜10%, NaCO1%˜5%, LiCO1%˜5%, MgCO0%˜5%, and CaF1%˜5%.'}2. A self-sharpening diamond grinding wheel claim 1 , comprising an abrasive block claim 1 , wherein raw materials of the abrasive block comprise a metal binding agent claim 1 , MoS claim 1 , SG abrasive claim 1 , diamond and the additive of ; andthe content of mass percentage of the additive in the raw materials of the abrasive block is 1%˜10%.3. The self-sharpening diamond grinding wheel according to claim 2 ,{'sub': 2', '3', '2', '3', '2', '2', '3', '2', '3', '2', '3', '3', '2, 'wherein the additive is made from raw materials in a mass percentage as follows: BiO25%˜35%, BO25%˜35%, ZnO 5%˜10%, SiO5%˜10%, AlO5%˜10%, NaCO1%˜5%, LiCO1%˜5%, MgCO1%˜5%, and CaF1%˜5%.'}4. The self-sharpening diamond grinding wheel according to claim 2 , wherein the additive is ...

Complex and method for producing same

A complex has a structure of formula (1A): SnX n ·(m)L, wherein X is at least one type of halogen atoms, L is a polar solvent molecule, n is a value from 1.5 to 2.5, and m is a value from 0.3 to 1.9. A perovskite compound has a structure of formula (2A): RSnX j , wherein Sn has an oxidation number from 1.5 to 2.5, R is at least one type of a monovalent cation, X is at least one type of halogen atoms, and j is a value from 2.5 to 3.5, and the perovskite compound is free of tin oxide; or a perovskite compound has a structure of formula (2B): R 2 M 2 BiX 1 , wherein R is at least one type of a monovalent cation, X is at least one type of halogen atoms; M 2 is a monovalent metal, and i is a value from 5.0 to 7.0.

Cathode active material and fluoride ion battery

A main object of the present disclosure is to provide a cathode active material used for a fluoride ion battery, the cathode active material comprising: a first active material having a composition represented by Pb2−xCu1+xF6, wherein 0≤x<2; and a second active material containing a Bi element and a F element.

METHOD FOR MAKING MNBI2TE4 SINGLE CRYSTAL

A method for making MnBiTesingle crystal is provided. The method includes: providing a mixture of polycrystalline MnTe and polycrystalline BiTein Molar ratio of 1.1:1˜1:1.1; heating the mixture in a vacuum reaction chamber to 700° C.˜900° C., cooling the mixture to 570° C.˜600° C. slowly with a speed less than or equal to 1° C./hour, and annealing the mixture at 570° C.˜600° C. for a time above days to obtain an intermediate product; and air quenching the intermediate product from 570° C.˜600° C. to room temperature. The method for making MnBiTesingle crystal is simple and has low cost. 1. A method for making MnBiTesingle crystal , the method comprising:{'sub': 2', '3, 'providing a mixture of polycrystalline MnTe and polycrystalline BiTein Molar ratio of 1.1:1˜1:1.1;'}heating the mixture in a vacuum reaction chamber to 700° C.˜900° C., cooling the mixture to 570° C.˜600° C. at a speed less than or equal to 1° C./hour, and annealing the mixture at 570° C.˜600° C. for at least 10 days to obtain an intermediate product; andair quenching the intermediate product from 570° C.˜600° C. to room temperature.2. The method of claim 1 , wherein the providing the mixture of polycrystalline MnTe and polycrystalline BiTecomprises: making the polycrystalline MnTe and polycrystalline BiTefirst respectively; and mixing the polycrystalline MnTe and polycrystalline BiTe.3. The method of claim 2 , wherein the polycrystalline MnTe is made by following steps: mixing elemental Mn and Te in Molar ratio of 1:1 to obtain a Mn/Te mixture;sintering the Mn/Te mixture in a vacuum room at 700° C.˜1000° C. for approximately 3˜5 days to obtain a reaction product; and natural cooling the reaction product.4. The method of claim 2 , wherein the polycrystalline BiTeis made by following steps: mixing elemental Bi and Te in Molar ratio of 2:3 to obtain a Bi/Te mixture; sintering the Bi/Te mixture in a vacuum room at 700° C.˜1000° C. for approximately 24˜40 hours; cooling the vacuum room to 560° C.˜580° C. ...

CHALCOGEN-CONTAINING COMPOUND, ITS PREPARATION METHOD AND THERMOELECTRIC ELEMENT COMPRISING THE SAME

A chalcogen-containing compound of the following Chemical Formula 1 which exhibits excellent phase stability at a temperature corresponding to the driving temperature of a thermoelectric element, and also exhibits an excellent thermoelectric performance index (ZT) through an increase in a power factor and a decrease in thermal conductivity, a method for preparing the same, and a thermoelectric element including the same: 1. A chalcogen-containing compound represented by the following Chemical Formula 1:{'br': None, 'sub': 1-x', 'x', '4-y', 'y', '2', '7-z', 'z, 'VMSnPbBiSeTe\u2003\u2003[Chemical Formula 1]'}wherein, in the above Formula 1, V is a vacancy, M is an alkali metal, x is greater than 0 and less than 1, y is greater than 0 and less than 4, and z is greater than 0 and less than or equal to 1.2. The chalcogen-containing compound of claim 1 , wherein the M is at least one alkali metal selected from the group consisting of Li claim 1 , Na claim 1 , and K.3. The chalcogen-containing compound of claim 1 , wherein the compound has a face-centered cubic crystal lattice structure.4. The chalcogen-containing compound of claim 3 , wherein the V is a vacant site excluding the sites filled with Se claim 3 , Sn claim 3 , Pb claim 3 , Bi claim 3 , and Te in the face-centered cubic lattice structure claim 3 , and the M is filled in at least some of the vacant (V) sites.5. The chalcogen-containing compound of claim 3 , wherein the Se is filled in an anion site of the face-centered cubic lattice structure claim 3 , the Sn claim 3 , Pb claim 3 , and Bi are filled in a cation site of the face-centered cubic lattice structure claim 3 , the Pb is substituted by replacing a part of the Sn claim 3 , the V is a vacant site of the remaining cationic sites excluding the sites filled with Sn claim 3 , Pb claim 3 , and Bi claim 3 , the M is filled in at least a part of the V claim 3 , and the Te is substituted by replacing a part of the Se.6. The chalcogen-containing compound of claim ...

LIQUID COMPOSITION FOR FORMING PIEZOELECTRIC FILM AND METHOD FOR FORMING PIEZOELECTRIC FILM IN WHICH SAID LIQUID COMPOSITION IS USED

A liquid composition for forming a piezoelectric film formed of a metal oxide including at least Bi, Na, and Ti. A raw material of the Na is a sodium alkoxide, a raw material of the Ti is a titanium alkoxide, a diol and an amine-based stabilizer are included, and a molar ratio of the amine-based stabilizer with respect to the titanium alkoxide (titanium alkoxide:amine-based stabilizer) is 1:0.5 to 1:4. It is preferable that the metal oxide is included as 4% by mass to 20% by mass with respect to 100% by mass of the liquid composition. 1. A liquid composition for forming a piezoelectric film comprising:a metal oxide including at least Bi, Na, and Ti;wherein a raw material of the Na is a sodium alkoxide,a raw material of the Ti is a titanium alkoxide,a diol and an amine-based stabilizer are included, anda molar ratio of the amine-based stabilizer to the titanium alkoxide (titanium alkoxide:amine-based stabilizer) is 1:0.5 to 1:4.2. The liquid composition according to claim 1 , further comprising:any one selected from the group consisting of Ba, K, Mg, Zn, and Ni.3. The liquid composition according to claim 1 , further comprising:Sr and Zr.4. The liquid composition according to claim 1 ,wherein the metal oxide is included as 4% by mass to 20% by mass with respect to 100% by mass of the liquid composition.5. A method for forming a crystallized piezoelectric film by coating a substrate with the liquid composition according to and carrying out pre-firing claim 1 , and then carrying out firing.6. A piezoelectric film formed of a metal oxide including at least Bi claim 1 , Na claim 1 , and Ti claim 1 ,wherein a film density of the piezoelectric film is 84% to 99% when measured by a scanning electron microscope.7. The piezoelectric film according to claim 6 , further comprising:any one selected from the group consisting of Ba, K, Mg, Zn, and Ni.8. The piezoelectric film according to claim 6 , further comprising:Sr and Zr.9. The piezoelectric film according to claim 6 , ...

Manufacturing methods for nanomaterial dispersions and products thereof

Methods for manufacturing nanomaterial dispersions, such as nanomaterial concentrates, and related nanotechnology are provided. The nanomaterial concentrates provided can be more cheaply stored and transported compared to non-concentrate nanomaterial forms.

Manufacturing methods for nanomaterial dispersions and products thereof

Methods for manufacturing nanomaterial dispersions, such as nanomaterial concentrates, and related nanotechnology are provided. The nanomaterial concentrates provided can be more cheaply stored and transported compared to non-concentrate nanomaterial forms.

Process for impregnating porous materials and process for preparing nanostructured product

The invention relates to a process for preparing a porous material comprising metal, metalloid, or non-metal precursor, said process comprising the steps of: - dispersing the porous material in a hydrophobic solvent; - adding a metal, metalloid, or non-metal precursor solution in a hydrophilic solvent to the dispersed porous material and the hydrophobic solvent, thereby forming a mixture; and - selectively removing the hydrophilic solvent from the mixture; thereby impregnating the porous material with the metal, metalloid, or non-metal precursor solution; thereby preparing a porous material comprising metal, metalloid, or non-metal precursor. The process may additionally comprise a step of converting the precursor, and a step of removing the porous material. Also described is a nanostructured metal, metalloid, or non-metal decomposition product; or metal, metalloid, or non-metal; or metal, metalloid, or non-metal oxide. ln a preferred embodiment, nanostructured bismuth is prepared using mesoporous silica or mesoporous titania as the porous material, viz. template.

Method for preparation of superconductor powders

An improved process for preparing superconducting ceramic powder includes calcining superconducting precursor compounds in an atmosphere having a controlled amount of oxygen, generally not more than that found in air, the remainder of the atmosphere composed of a gas or mixture of gases inert with respect to the ceramic. A preferred process includes forming the precursor compounds into a slurry, granulating the slurry, drying the granules (a binder can be added to the slurry to promote green strength), and calcining in the controlled atmosphere to provide the desired HTSC (high temperature superconductor) composition.

Battery with novel components

A battery cell having an anode or cathode comprising an acidified metal oxide (“AMO”) material, preferably in monodisperse nanoparticulate form 20 nm or less in size, having a pH<7 when suspended in a 5 wt % aqueous solution and a Hammett function H0>12, at least on its surface.

Bismuth based pigments and process for their preparation

纳米材料分散体的制造方法及其产品

制造纳米材料分散体的方法及相关的纳米技术。说明了存贮和运输更为廉价的纳米材料浓缩物。

Cathode active material and fluoride ion battery

[과제] 본 개시는, 용량 유지율이 양호한 정극 활물질을 제공하는 것을 주목적으로 한다. [해결 수단] 본 개시에 있어서는, 불화물 이온 전지에 이용되는 정극 활물질로서, Pb 2-x Cu 1+x F 6 (0≤x<2)으로 나타나는 조성을 가지는 제 1 활물질과, Bi 원소 및 F 원소를 함유하는 제 2 활물질을 가지는 정극 활물질을 제공함으로써, 상기 과제를 해결한다. [Problem] The main purpose of the present disclosure is to provide a positive electrode active material having a good capacity retention rate. [Solution means] In the present disclosure, as a positive electrode active material used in a fluoride ion battery, a first active material having a composition represented by Pb 2-x Cu 1+x F 6 (0≦x<2), and a Bi element and an F element The said subject is solved by providing the positive electrode active material which has a 2nd active material containing.

Anticorrosion paint composition

복합체, 그 제조방법, 이를 포함하는 애노드 활물질, 이를 포함하는 애노드 및 이를 채용한 리튬 이차 전지

리튬 티타늄 산화물 및 비스무스 티타늄 산화물을 포함하는 복합체, 이를 포함하는 애노드 활물질, 이를 포함하는 애노드 및 이를 구비하여 셀 성능이 개선된 리튬 이차전지가 개시된다.

Combined cracking and selective hydrogen combustion for catalytic cracking

A catalyst system and process for combined cracking and selective hydrogen combustion of hydrocarbons are disclosed. The catalyst comprises: (1) at least one solid acid component, (2) at least one metal-based component comprised of (i) at least one of oxygen and sulfur (ii) one or more elements from Groups 5–15 of the Periodic Table of the Elements; and (iii) one or more elements from at least one of (a) Groups 1–2 and (b) Group 4; of the Periodic Table of the Elements; and (3) at least one of at least one support, at least one filler and at least one binder. The process is such that the yield of hydrogen is less than the yield of hydrogen when contacting the hydrocarbons with the solid acid component alone.

一种制备镍包覆铋硫氯的方法

本发明公开了一种制备镍包覆铋硫氯的方法，属于材料制备技术领域。本发明所述方法通过液相辅助溶剂热还原法在铋硫氯晶粒表面包覆一层镍单质。方法包括：铋硫氯粉体研磨、稀盐酸浸泡清洗除杂；超声震荡分散；浸泡氢氧化钠溶液10～20min；加入硫酸镍溶液使表面形成氢氧化镍颗粒包覆；使用液相辅助溶剂热还原法还原氢氧化镍；离心、洗涤、干燥得到晶粒表面均匀包覆镍单质的包镍铋硫氯材料。本发明所述方法工艺简单，设备要求低，通过包覆镍修饰铋硫氯晶粒表面，维持铋硫氯自身较高的初始塞贝克系数，电导率性能得到了极大的改善。

Chalcogen-containing compound, its preparation method and thermoelectric element comprising the same

본 발명에서는 열전소자의 구동 온도에 대응하는 온도에서 우수한 상(phase) 안정성을 나타내며, 출력인자 증가 및 열전도도 감소를 통해 우수한 열전 성능지수(ZT)를 나타내는, 하기 화학식 1의 신규 칼코겐 화합물, 이의 제조 방법 및 이를 포함하는 열전소자가 제공된다: [화학식 1] V 1-x M x Sn 4-y Pb y Bi 2 Se 7-z Te z 상기 화학식 1에서, V는 공공(Vacancy)이고, M은 알칼리 금속이며, x는 0 초과 1 미만, y는 0 초과 4 미만, z는 0 초과 1 이하이다. In the present invention, a novel chalcogen compound represented by the following Chemical Formula 1, which exhibits excellent phase stability at a temperature corresponding to the driving temperature of the thermoelectric element, and exhibits excellent thermoelectric performance index (ZT) through an increase in output factor and a decrease in thermal conductivity, A method of manufacturing the same and a thermoelectric element comprising the same are provided: [Formula 1] V 1-x M x Sn 4-y Pb y Bi 2 Se 7-z Te z In Chemical Formula 1, V is a vacancy, M is an alkali metal, x is greater than 0 and less than 1, y is greater than 0 and less than 4, and z is greater than 0 and less than 1.

Zeolite, and production method and use therefor

本发明提供制备卤氧化铋的方法，包括在还原剂的存在下使卤氧化铋在酸性水性介质中沉淀。本发明也提供了用单质铋Bi (0) 掺杂的卤氧化铋化合物。本发明也描述了Bi (0) 掺杂的卤氧化铋用作水纯化中的光催化剂的用途。

Mixed oxidation and bismuth sulfide and copper for photovoltaic applications

Bismuth-titanium-silicon oxide, bismuth-titanium-silicon oxide thin film and manufacturing method thereof

METHOD FOR PRODUCING BISMUTH GERMANATE Bi2Ge3O9

FIELD: chemistry. SUBSTANCE: invention relates to chemistry and can be used in producing initial charge for growing monocrystals for laser equipment. Method of producing bismuth germanate Bi 2 Ge 3 O 9 includes mechanical mixing of initial powders of bismuth oxide Bi 2 O 3 and germanium GeO 2 oxide in molar ratio of 1:3. Mixture is heated to 1200 ± 20 °C is held until transition of melt into a liquid state, glass is obtained and annealed at 940 ± 20 °C. EFFECT: invention enables to obtain a pure end product. 1 cl, 4 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 687 924 C1 (51) МПК C01G 29/00 (2006.01) C01G 17/00 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (52) СПК C01G 29/00 (2018.08); C01G 17/00 (2018.08) (21)(22) Заявка: 2018123249, 26.06.2018 (24) Дата начала отсчета срока действия патента: 16.05.2019 Приоритет(ы): (22) Дата подачи заявки: 26.06.2018 (56) Список документов, цитированных в отчете о поиске: O.M. Bordun et al., Termally (45) Опубликовано: 16.05.2019 Бюл. № 14 stimulated Luminescence of bismuth germanate ceramics with the benitoite, eulitine and sillenite structeres, J. of Applied Spectroscopy, 75, (3), 379-384, 2008. Xing-Hua MA et al., Synthesis and microwave dielectric properties of Bi2Ge3O9 ceramics for application as advanced ceramic substrate, J. of the Eurohean (см. прод.) 2 6 8 7 9 2 4 (54) Способ получения германата висмута Bi 2 Ge 3 O 9 (57) Реферат: Изобретение относится к области химии и может быть использовано при получении исходной шихты для выращивания монокристаллов для лазерной техники. Способ получения германата висмута Bi2Ge3O9 включает механическое смешивание исходных порошков оксида висмута Bi2O3 и оксида германия GeO2 при мольном соотношении 1:3. Смесь нагревают до 1200±20°С, выдерживают до перехода расплава в жидкотекучее состояние, получают стекло и отжигают его при 940±20°С. Изобретение обеспечивает получение чистого целевого продукта. 4 ил. R U (56) (продолжение): Ceramic ...

Preparation method of bismuth oxychloride crystal and bismuth oxychloride crystal

本发明公开了一种氯氧化铋晶体的制备方法及氯氧化铋晶体，该制备方法将尿素、阳离子嵌段聚合物和盐酸水溶液混合搅拌，获得pH在0.8‑1.2的混合溶液，其中，所述阳离子嵌段聚合物由两种以上性质不同的聚合物链段组成，所述聚合物链段至少包括有一种阳离子聚合物和一种水溶性聚合物；向所述混合溶液中滴加铋盐溶液，反应完成后纯化、干燥，获得氯氧化铋晶体。该制备方法可调控氯氧化铋晶体的形貌和尺寸，可制备不同尺寸的晶体，且制得的晶体分散性好、均一、无碎片、无团聚、形貌规整、光泽性优异、固含量高，整个制备工艺操作简单，易于工业化生产。

A kind of preparation method of richness bismuth bismuth oxybromide photocatalyst

本发明公开了一种富铋溴氧化铋光催化剂的制备方法，属于光催化领域。其主要特征是：在一定的pH值和聚合物导向的作用下，可以实现溴氧化铋自身的重掺杂，得到新型富铋溴氧化铋Bi 4 O 5 Br 2 这一光催化材料，且表现出较好的可见光催化活性。制备步骤为：将丙三醇和去离子水以一定比例混合至烧杯中，先加入五水硝酸铋，搅拌至澄清透明时加入溴源，充分搅拌后再加入聚合物导向剂，并用氢氧化钠溶液调节溶液的pH值，继续搅拌直至形成均一的白色悬浮液后将其转入高压反应釜中，高温下反应一定时间，将所得产物离心分离，洗涤数次并烘干，即可得到富铋溴氧化铋Bi 4 O 5 Br 2 光催化剂。该方法工艺简单，成本低廉，易于操作实现，制备的富铋溴氧化铋Bi 4 O 5 Br 2 光催化剂具有较高的可见光催化活性，有望应用于环境污染物的降解。

Oxide Material, Method for Preparing Oxide Thin Film and Element Using Said Material

본 발명은 퍼로브스카이트 또는 층형 퍼로브스카이트 구조 산화물에 Si, Ge 및 Sn으로 이루어지는 군에서 선택되는 1종 이상의 IV족 원소를 함유하는 촉매 물질이 고용하여 형성된 산화물 재료에 관한 것이다. 본 발명에 따르면, 퍼로브스카이트 또는 층형 퍼로브스카이트 구조 산화물 재료를 저온에서 결정화할 수 있고, 이들 산화물 재료의 특성을 유지 또는 개선할 수 있다. The present invention relates to an oxide material formed by solid solution of a catalytic material containing at least one group IV element selected from the group consisting of Si, Ge, and Sn in a perovskite or layered perovskite structure oxide. According to the present invention, the perovskite or layered perovskite structure oxide materials can be crystallized at low temperatures, and the properties of these oxide materials can be maintained or improved.

Dielectric material, metod of manufacturing thereof, and dielectric devices and electronic devices including the same

유전체, 그 제조 방법, 이를 포함하는 유전체 소자 및 전자 소자가 제공된다. 전술한 유전체는 양전하를 띄는 제1층과 음전하를 띄는 제2층이 교번적으로 적층되어 있는 층상금속 산화물, 층상금속 산화물로부터 박리된 단층 나노시트, 및 단층 나노시트가 2 이상 적층된 나노시트 적층체 중 적어도 하나를 포함하되, 2차원 결정 구조를 갖는 2차원 층상 소재를 포함하며, 2차원 층상 소재는 하기 화학식 1로 표현된다. 화학식 1은 상세한 설명에 기재되어 있다. Provided are a dielectric, a method for manufacturing the same, a dielectric device and an electronic device including the same. The aforementioned dielectric is a layered metal oxide in which a first layer having a positive charge and a second layer having a negative charge are alternately stacked, a single-layer nanosheet peeled from the layered metal oxide, and a nanosheet stack in which two or more single-layer nanosheets are stacked It includes at least one of the sieves, but includes a two-dimensional layered material having a two-dimensional crystal structure, and the two-dimensional layered material is represented by the following formula (1). Formula 1 is described in the detailed description.

Lead-free piezoelectric ceramic composition, and preparation method thereof

The present invention provides lead-free piezoelectric ceramic composition, and a preparation method thereof. According to the present invention, the lead-free piezoelectric ceramic composition has a structure in which the bismuth-based ferroelectric particles represented by any one selected from a group consisting of chemical formula 3 or 5 is dispersed in a specific content range in the bismuth-based ferroelectric particles represented by chemical formula 1 or 2 bismuth-based ferroelectric so as to be environmentally friendly due to excluding a lead. The present invention has an excellent electric field organic variation ratio in low electric field condition of 4 kV/mm or less, thereby being used in various fields of piezoelectric applications in which piezoelectric materials are used.

Cerium (IV) oxide-based composition, preparation method and use thereof

본 발명은 조성물이 세륨(Ⅳ)산화물과 그 이외에도 철, 비스무트, 니켈, 주석 및 크롬으로 구성된 군에서 선택되는 적어도 1종의 기타 금속 원소 Ｍ의 산화물 또는 이들의 혼합물을 함유하고, 상기 산화물이 바람직하게는 상기 언급된 세륨 산화물과의 고체 용액 상태임을 특징으로 하는 개량된 산소 저장능을 가진 세륨(Ⅳ)산화물계 신규 조성물에 관한 것이다. 이 조성물의 합성 방법은 우선(ⅰ)세륨(Ⅳ)산화물 또는 세륨(Ⅳ)수산화물과 (ⅱ)산화물로 열 분해 가능한 근속원소 Ｍ의 수산화물 또는 염으로 구성된 적어도 1종의 첨가제와의 친밀한 혼합물을 제조한 다음,이 혼합물을 하소시켜 산화물계 목적 조성물을 수득하는 것으로 이루어진다. 본 발명에 따른 조성물은 촉매 및/또는 촉매 지지체, 특히 내부 연소기관으로 부터의 배기 가스의 처리용 촉매의 제조에서 특히 유용하다.

METHOD FOR PRODUCING Bi12SiO20 BISMUTH SILICATE BY CASTING METHOD

Изобретение относится к области химии и может быть использовано в области пьезо- и оптоэлектроники. Способ получения силиката висмута BiSiОметодом литья включает предварительное механическое смешивание исходных компонентов ВiОи SiOи нагрев полученной смеси в платиновом тигле до заданной температуры. При этом нагрев осуществляют в интервале 900-1200°С с выдержкой в данном интервале не менее 15 минут, после чего полученный расплав льют на платиновую подложку. Техническим результатом является получение силиката висмута с формулой BiSiOбез загрязнений и посторонних примесей и сокращение времени синтеза. 5 ил., 1 пр. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (51) МПК C01G 29/00 C22B 30/06 C01B 33/20 C30B 29/34 (11) (13) 2 669 677 C1 (2006.01) (2006.01) (2006.01) (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (52) СПК C01G 29/00 (2006.01) (21)(22) Заявка: 2018110216, 22.03.2018 (24) Дата начала отсчета срока действия патента: 12.10.2018 Приоритет(ы): (22) Дата подачи заявки: 22.03.2018 (56) Список документов, цитированных в отчете о поиске: H.W. GUO, X.F. WANG, D.N. GAO, (45) Опубликовано: 12.10.2018 Бюл. № 29 (54) Способ получения силиката висмута Bi 12 SiO 20 методом литья (57) Реферат: Изобретение относится к области химии и может быть использовано в области пьезо- и оптоэлектроники. Способ получения силиката висмута Bi12SiО20 методом литья включает предварительное механическое смешивание исходных компонентов Вi2О3 и SiO2 и нагрев осуществляют в интервале 900-1200°С с выдержкой в данном интервале не менее 15 минут, после чего полученный расплав льют на платиновую подложку. Техническим результатом является получение силиката висмута с формулой Bi12SiO20 без загрязнений и посторонних полученной смеси в платиновом тигле до заданной температуры. При этом нагрев примесей и сокращение времени синтеза. 5 ил., 1 пр. R U 2 6 6 9 6 7 7 A novel method for preparation of pure Bi2SiO5 crystals, Journal Materials Letters 67, 2012, p. 280-282;RU ...

The preparation method of rodlike molybdenum oxide and the preparation method for aoxidizing molybdenum composite material

本发明涉及一种棒状氧化钼的制备方法以及氧化钼复合材料的制备方法。根据本发明的棒状氧化钼的制备方法可在低温低压的条件下进行，并因此具有能够大量生产棒状氧化钼的优点。而且，根据本发明的氧化钼复合材料的制备方法可以在等于或低于乙醇的沸点的温度下合成，并且减少使用的乙醇溶剂的量。

Sodium bismuth titanate-based film with positive and negative electrocaloric effects and preparation method thereof

本发明属于电子功能材料与器件领域，具体涉及一种兼具正负电卡效应的钛酸铋钠基薄膜及其制备方法。本发明的钛酸铋钠基薄膜由基片、底电极、铁电薄膜层和顶电极组成，所述薄膜的组成通式为Na 0.5×a Bi 0.5×b (Ti 1‑x‑y W x Fe y )O 3 ，其中，1.01≤a≤1.02，1.01≤b≤1.04，0.01≤x≤0.02，0.01≤y≤0.02。在143 ℃附近，正绝热温变和等温熵变的峰值为目前报导中最大值：∆ T ~55 K，∆ S ~64 J K ‑1 kg ‑1 ；在同一制冷循环内，54 ℃附近，负绝热温变和等温熵变的峰值为：∆ T ~‑17 K，∆ S ~‑26 J K ‑1 kg ‑1 。通过化学溶液法制备的该钛酸铋钠基薄膜具有电卡性能优异、环境友好、工艺简单以及成本低等优点，在芯片制冷、传感器及电子器件等温度控制领域具有广泛的应用前景。

A kind of preparation method of sheet BiOCl photochemical catalysts and obtained photochemical catalyst and application

本发明提供了一种片状BiOCl光催化剂的制备方法及制得的光催化剂和应用，所述制备方法包括：(1)在水中加入硝酸铋和木糖醇，超声得到溶液；所述硝酸铋和木糖醇的摩尔用量比例为：1：(0.5‑10)；(2)将步骤(1)得到的所述溶液置于封闭装置中，所述封闭装置设置一开孔用于滴入氯化物溶液，所述氯化物溶液滴入所述溶液中，搅拌均匀，得到混合物溶液；(3)将步骤(2)得到的所述混合物溶液的pH值调节至5.5‑6.5，得到反应物；(4)将步骤(3)所得反应物在150‑160℃下进行反应24‑30h，得到沉淀；(5)将步骤(4)得到的所述沉淀洗涤，干燥，得到片状形貌的BiOCl。本发明制备了优异光降解活性的片状纳米光催化剂BiOCl，在可见光下可高效降解污染物。

Method for producing hollow microspheres of bismuth ferrite

Изобретение может быть использовано для получения наноструктурированных порошков феррита висмута BiFeO, применяемых в микроэлектронике, спинтронике, устройствах для магнитной записи информации, в производстве фотокатализаторов, материалов для фотовольтаики. Способ получения полых микросфер феррита висмута включает ультразвуковое воздействие на смесь нитратов железа и висмута, взятых в стехиометрическом соотношении, сушку и последующее прокаливание. Ультразвуковому воздействию подвергают водный раствор смеси нитратов железа и висмута с концентрацией 0,24-0,48 моль/л в пересчете на феррит висмута. Водный раствор переводят во взвешенное состояние с образованием аэрозоля, частицы которого подаются в зону сушки, а затем в зону прокаливания. Частота ультразвукового воздействия 1,7–3,0 МГц, скорость подачи воздуха 0,150–0,185 м/с. Полученный продукт сушат при 250-350°С и прокаливают при 800-820°С. Изобретение позволяет сократить процесс получения полых микросфер феррита висмута до нескольких секунд. 4 ил., 4 пр. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 663 738 C1 (51) МПК C01G 29/00 (2006.01) C01G 49/00 (2006.01) B01J 13/04 (2006.01) B01J 19/10 (2006.01) B22F 9/16 (2006.01) B82B 3/00 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА B82Y 30/00 (2011.01) ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ B01J 23/843 (2006.01) B01J 35/08 (2006.01) (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (52) СПК C01G 29/00 (2018.05); C01G 49/0018 (2018.05); B01J 13/043 (2018.05); B01J 13/0095 (2018.05); B01J 19/10 (2018.05); B22F 9/16 (2018.05); B82B 3/00 (2018.05); B82Y 30/00 (2018.05); B01J 23/8437 (2018.05); B01J 35/08 (2018.05) 2017140965, 24.11.2017 (24) Дата начала отсчета срока действия патента: 24.11.2017 (73) Патентообладатель(и): Федеральное государственное бюджетное учреждение науки Институт химии твердого тела Уральского отделения Российской академии наук (RU) 09.08.2018 Приоритет(ы): (22) Дата подачи заявки: 24.11.2017 2 6 6 3 7 3 8 R U Адрес для переписки: 620990, Сверловская обл., г. Екатеринбург, ул. Первомайская, 91 ...

Rod-shaped bismuth sulfide hollow nano-microsphere and preparation method thereof

本发明公开了一种棒状硫化铋中空纳米微球及其制备方法，其是将单分散的多级孔结构ZnS纳米微球和硫脲均匀分散在醇溶液中，在80～130℃下搅拌、保温10min，随后再快速注入完全溶解在醇溶液里的铋盐，敞口反应10～30min，自然冷却至室温、离心洗涤后即得到目标产物棒状Bi 2 S 3 中空纳米微球。本发明首次通过在敞口体系下，于溶液相中合成了棒状Bi 2 S 3 中空纳米微球，合成方法简单、反应条件温和、所得的产物形貌均一、生产成本较低、适合产业化放大生产。

Methods for production of nanomaterials dispersion and products on its basis

Изобретение относится к композиции материала, содержащей концентрированную дисперсию из наноматериала и композиции растворителя, к продукту, приготовленному с использованием данной композиции, и способам приготовления данной композиции. Сущность изобретения заключается в том, что получают композицию материала, содержащую концентрированную дисперсию из наноматериала и композиции растворителя, в которой объемная плотность концентрированной дисперсии по меньшей мере в три раза более высокая, чем объемная плотность наноматериала в сухой форме, концентрат требует меньшего объема для хранения и транспортировки по сравнению с объемом, который требуется для сухого наноматериала, и наполнение наноматериала в концентрированной дисперсии составляет по меньшей мере 40 мас.%. При этом композицию растворителя выбирают таким образом, что коэффициент межфазного соответствия Хансена между наноматериалом и композицией растворителя составляет менее 20. Технический результат заключается в том, что композиции наноматериалов могут храниться и транспортироваться более дешево по сравнению с сухим наноматериалом. 4 н. и 12 з.п. ф-лы, 1 табл., 1 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2 398 621 (13) C2 (51) МПК B01F 3/00 (2006.01) B82B 1/00 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (21), (22) Заявка: 2008102114/15, 30.05.2006 (24) Дата начала отсчета срока действия патента: 30.05.2006 (73) Патентообладатель(и): ППГ ИНДАСТРИЗ ОГАЙО, ИНК. (US) R U (30) Конвенционный приоритет: 21.06.2005 US 11/157,164 (72) Автор(ы): ЯДАВ Тапеш (US) (43) Дата публикации заявки: 27.07.2009 2 3 9 8 6 2 1 (45) Опубликовано: 10.09.2010 Бюл. № 25 (56) Список документов, цитированных в отчете о поиске: US 2003218258 A1, 27.11.2003. JP 2003192331 A, 09.07.2003. RU 2258671 C2, 27.03.2005. US 5480456 A, 02.01.1996. US 6221275 B1, 24.04.2001. US 5122298 A, 16.06.1992. JP 11140131 A, 25.05.1999. 2 3 9 8 6 2 1 R U (86) Заявка PCT: US 2006/ ...

A phosphor for white LED, and white light emitting device including the same

본 발명은 하기 화학식 1로 표시되는 알칼리 토금속 실리케이트계 형광체 및 이를 포함하는 LED를 제공한다. The present invention provides an alkaline earth metal silicate-based phosphor represented by Formula 1 below and an LED including the same. <화학식 1> &Lt; Formula 1 > (M1 1-x-y A x B y ) a Mg b M2 c O d Z e (M1 1-xy A x B y ) a Mg b M2 c O d Z e 상기 식 중, Wherein, M1은 Ba, Ca 및 Sr으로 이루어진 군으로부터 선택된 하나이고, M1 is one selected from the group consisting of Ba, Ca and Sr, M2는 Si 및 Ge 중에서 선택된 하나 이상이고, M2 is at least one selected from Si and Ge, A,B는, 각각 독립적으로, Eu, Ce, Mn, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Bi, Sn 및 Sb로 이루어진 군으로부터 선택된 하나이고, A and B are each independently one selected from the group consisting of Eu, Ce, Mn, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Bi, Sn and Sb, Z는 1가 또는 2가 원소, H 및 N으로 이루어진 군으로부터 선택된 하나 이상이고, Z is at least one selected from the group consisting of monovalent or divalent elements, H and N, 0<x<1, 0≤y≤1, 6.3<a<7.7, 0.9<b<1.1, 3.6<c<4.4, 14.4<d<17.6, 14.4<d+e<17.6 및 0≤e≤0.18이다. 0 <x <1, 0≤y≤1, 6.3 <a <7.7, 0.9 <b <1.1, 3.6 <c <4.4, 14.4 <d <17.6, 14.4 <d + e <17.6 and 0≤e≤0.18 . 상기 화학식 1로 표시되는 알칼리 토금속 실리케이트계 형광체는 넓은 여기 파장 영역을 갖기 때문에, 백색 발광 소자를 구현하는데 있어서, UV-LED 및 청색 LED 모두 적용 가능하고, 또한, 발광 스펙트럼의 총 발광 면적이 종래 사용되는 형광체에 보다 더 크기 때문에 더 우수한 발광 효율을 나타낸다. Since the alkaline earth metal silicate-based phosphor represented by Chemical Formula 1 has a wide excitation wavelength region, both a UV-LED and a blue LED may be applied to implement a white light emitting device, and the total light emitting area of the emission spectrum is conventionally used. Since the phosphor is larger than the phosphor, it shows a better luminous efficiency.

Preparation of porous Bi under inert atmosphere 5 O 7 Method for preparing I material

本发明涉及多孔光催化材料制备技术领域，具体提供一种多孔Bi5O7I材料的制备方法。具体的，将碘盐和铋盐溶于水中，调节pH和硝酸根浓度，然后进行水热反应，得到中间产物A，将中间产物A于惰性气氛中煅烧，得多孔Bi 5 O 7 I样品，本发明制备的Bi 5 O 7 I样品与惰性气氛中得到，相较于富养条件，催化活性更高，而且所制备材料表面均匀分布孔结构且孔结构尺寸可随工艺参数变化调整。具有丰富的表面缺陷，能够有效调控其光催化性能。该制备方法工艺易于调整，操作简单，反应条件温和，适于大批量工业生产。

Plasma processing detection indicator using inorganic substance as a color-change layer

The present invention provides a plasma treatment detection indicator including a color-changing layer that changes color by plasma treatment, exhibiting excellent heat resistance, with the gasification of the color-changing layer or the scattering of the fine debris of the color-changing layer caused by the plasma treatment being suppressed to such a degree as to not affect the electronic device properties. Specifically, the present invention provides a plasma treatment detection indicator including a color-changing layer that changes color by plasma treatment, the color-changing layer containing at least one metal element selected from the group consisting of Mo, W, Sn, V, Ce, Te, and Bi in the form of a simple substance and/or an inorganic compound containing at least one metal element selected from the group consisting of Mo, W, Sn, V, Ce, Te, and Bi.

Ink composition for plasma processing detection, and indicator for plasma processing detection using said ink composition

The present invention provides an ink composition for forming a color-changing layer that changes color by plasma treatment, the ink composition exhibiting excellent heat resistance, with the gasification of the color-changing layer or the scattering of the fine debris of the color-changing layer caused by plasma treatment being suppressed to the extent that electronic device properties are not affected. The invention provides an ink composition for forming a color-changing layer that changes color by plasma treatment, the ink composition comprising metal oxide particles containing at least one element selected from the group consisting of Mo, W, Sn, V, Ce, Te, and Bi, and a binder resin.

Bismuth germanate-silicate production method

FIELD: chemistry. SUBSTANCE: invention relates to chemistry and can be used to produce a metastable compound with Bi 2 GeO 5 crystal structure with the addition of silicon oxide (SiO 2 ) without changing the crystal structure of the material. Method of producing germanate-silicate of bismuth involves preliminary mechanical mixing of initial powders: bismuth oxide Bi 2 O 3 – 50 mol%, germanium oxide GeO 2 – 10–49 mol% and silicon oxide SiO 2 – 10–40 mol%, heating the obtained mixture in a platinum crucible to 1,100–1,200 °C is cured in this temperature range for 15–60 minutes, after which the obtained melt in the crucible is removed from the furnace and cooled in air. EFFECT: laminar materials with a crystal structure of Auervillius are obtained, free from extraneous impurity phases. 1 cl, 10 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) (19) RU (11) (13) 2 724 760 C1 (51) МПК C30B 29/32 (2006.01) C30B 29/34 (2006.01) C30B 29/68 (2006.01) C04B 35/493 (2006.01) C04B 35/626 (2006.01) C01G 17/00 (2006.01) C01G 29/00 (2006.01) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (52) СПК C30B 29/32 (2020.02); C30B 29/34 (2020.02); C30B 29/68 (2020.02); C04B 35/453 (2020.02); C04B 35/62645 (2020.02); C04B 2235/3298 (2020.02); C01G 17/00 (2020.02); C01G 29/00 (2020.02); C01P 2002/50 (2020.02); C01P 2002/72 (2020.02); C01P 2004/02 (2020.02) (21)(22) Заявка: 2020105807, 06.02.2020 06.02.2020 25.06.2020 Приоритет(ы): (22) Дата подачи заявки: 06.02.2020 (54) Способ получения германата-силиката висмута (57) Реферат: Изобретение относится к области химии и может быть использовано для получения метастабильного соединения с кристаллической структурой Bi2GeO5 с добавлением оксида кремния (SiO2) без изменения кристаллической структуры материала. Способ получения германата-силиката висмута включает предварительное механическое смешивание исходных порошков: оксида висмута Bi2O3 - 50 R U 2 7 2 4 7 6 0 Адрес для переписки: 660025, г. Красноярск, пр-т Красноярский рабочий, ...

METHOD OF PRODUCING BISMUTH GERMANATE Bi2GeO5

FIELD: chemistry. SUBSTANCE: method involves preliminary mechanical mixing of the initial bismuth oxide powders Bi 2 O 3 and germanium oxide GeO 2 , heating the resulting mixture in a platinum crucible to a temperature of 1050-1160°C, holding in the molten state in the crucible for, at least, 15 minutes followed by cooling also in the crucible. EFFECT: producing bismuth germanate with a high number of internal stresses, which allows to extract it from the platinum crucible by simple tapping and shaking, which allows to prolong the life of an expensive crucible, since extraction of the material synthesized from it takes place without destruction and severe deformation. 4 dwg, 1 ex РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 636 090 C1 (51) МПК C01G 17/00 (2006.01) C01G 29/00 (2006.01) C04B 35/453 (2006.01) C04B 35/622 (2006.01) C04B 35/626 (2006.01) B01J 37/08 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА B01J 23/14 (2006.01) ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ B01J 23/18 (2006.01) (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (21)(22) Заявка: 2017110974, 31.03.2017 (24) Дата начала отсчета срока действия патента: 31.03.2017 (72) Автор(ы): Бермешев Тимофей Владимирович (RU), Жереб Владимир Павлович (RU) 20.11.2017 Приоритет(ы): (22) Дата подачи заявки: 31.03.2017 crystallization behaviour of bismuth germanate glasses, "Journal of Materials Science", 1991, Vol. 26, No.15, pp 4215-4219. JP 58167429 А, 03.10.1983. ВОРОНЧИХИНА М.Е. и др. СОЗДАНИЕ ПРОЗРАЧНОГО СТЕКЛОКРИСТАЛЛИЧЕСКОГО МАТЕРИАЛА НА ОСНОВЕ КРИСТАЛЛИЗАЦИИ СТЕКОЛ В СИСТЕМЕ Bi 2 O 3 -GeO 2 ДЛЯ СЦИНТИЛЛЯТОРОВ, "УСПЕХИ В ХИМИИ И (см. прод.) R U 2 6 3 6 0 9 0 (54) СПОСОБ ПОЛУЧЕНИЯ ГЕРМАНАТА ВИСМУТА Bi2GeO5 (57) Реферат: Изобретение относится к области химии и может быть использовано для катализаторов при получении необходимых в промышленности газов и для синтеза высокопрочной керамики. Способ получения германата висмута Bi2GeO5 включает предварительное механическое смешивание исходных порошков оксида висмута Bi2О3 и оксида германия GeO2, нагрев ...

METHOD FOR OBTAINING A BISMUTH GERMANATE Bi4Ge3O12

FIELD: technological processes. SUBSTANCE: invention relates to a technology for the preparation of bismuth germanate Bi 4 Ge 3 O 12 , which can be used as a starting material for the cultivation of pure, defect-free single crystals, as well as in gamma spectroscopy, nuclear industry, in medicine, optoelectronics, high-energy physics. Method includes a preliminary mechanical mixing of the initial bismuth oxide powders Bi 2 O 3 and germanium oxide GeO 2 , heating of the obtained mixture in a platinum crucible under a predetermined temperature, the obtained melt being pre-heat treated at a temperature of from 1,160±20 °C with an exposure of at least 15 minutes, then the melt is cooled to 1,060±10 °C…1,090±40 °C with isothermal holding in this temperature range for at least 15 minutes and then is cooled in the oven at a speed of no higher than 20 deg/min. EFFECT: technical result is to increase the efficiency of the process by reducing the time and obtaining a single-phase Bi 4 Ge 3 O 12 . 1 cl, 4 dwg, 1 ex РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 654 946 C1 (51) МПК C30B 29/32 (2006.01) C01G 29/00 (2006.01) C01G 17/00 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (52) СПК C30B 29/32 (2018.01); C01G 29/00 (2018.01); C01G 17/00 (2018.01); C01P 2006/80 (2018.01) (21)(22) Заявка: 2017135731, 05.10.2017 (24) Дата начала отсчета срока действия патента: 23.05.2018 Приоритет(ы): (22) Дата подачи заявки: 05.10.2017 (56) Список документов, цитированных в отчете о поиске: CN 103014864 В, 03.08.2016. SU (45) Опубликовано: 23.05.2018 Бюл. № 15 (54) СПОСОБ ПОЛУЧЕНИЯ ГЕРМАНАТА ВИСМУТА Bi 4 Ge 3 O 12 может быть использован в качестве исходного материала для выращивания чистых, бездефектных монокристаллов, а также в гаммаспектроскопии, ядерной промышленности, в медицине, оптоэлектронике, физике высоких энергий. Способ включает предварительное механическое смешивание исходных порошков оксида висмута Bi2O3 и оксида германия GeO2, (57) ...