17-01-2019 дата публикации
Номер: US20190019655A1
Принадлежит:
Described herein are components of a semiconductor processing apparatus, where at least one surface of the component is resistant to a halogen-containing reactive plasma. The component includes a solid structure having a composition containing crystal grains of yttrium oxide, yttrium fluoride or yttrium oxyfluoride and at least one additional compound selected from an oxide, fluoride, or oxyfluoride of neodymium, cerium, samarium, erbium, aluminum, scandium, lanthanum, hafnium, niobium, zirconium, ytterbium, hafnium, and combinations thereof. 1. A component of a semiconductor processing apparatus , wherein a surface of the component is resistant to a halogen-comprising reactive plasma , the component comprising: crystal grains selected from a group consisting of yttrium oxide, yttrium fluoride and yttrium oxyfluoride, and', 'at least one additional compound selected from a group consisting of an oxide, fluoride, or oxyfluoride of neodymium, cerium, samarium, erbium, aluminum, scandium, lanthanum, hafnium, niobium, zirconium, ytterbium and combinations of an oxide, fluoride or oxyfluoride of at least one of these elements., 'a solid structure having an overall uniform composition, wherein the composition comprises2. The component of claim 1 , wherein the composition further comprises an amorphous phase comprising yttrium and fluorine.3. The component of claim 1 , wherein the composition comprises a yttrium aluminum oxyfluoride (Y—Al—O—F) amorphous phase.4. The component of claim 1 , wherein the composition comprises a yttrium oxide.5. The component of claim 1 , wherein in the composition comprises a yttrium fluoride.6. The component of claim 1 , wherein the composition comprises a yttrium oxyfluoride.7. The component of claim 1 , wherein the at least one additional compound comprises aluminum oxide claim 1 , aluminum fluoride or aluminum oxyfluoride.8. The component of claim 1 , wherein the at least one additional compound comprises zirconium oxide claim 1 , ...
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