СПОСОБ ПОДАЧИ ГАЗОВ В РЕАКТОР ДЛЯ ВЫРАЩИВАНИЯ ЭПИТАКСИАЛЬНЫХ СТРУКТУР НА ОСНОВЕ НИТРИДОВ МЕТАЛЛОВ III ГРУППЫ И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ

Verfahren und Anlage zum Herstellen einer Dünnfilm-Elektroluminescentenvorrichtung

CONTROLLING VELOCITY OF FINE PARTICLES

APPARATUS AND METHOD FOR PRODUCING A LAMINAR FLOW OF CONSTANT VELOCITY FLUID ALONG A SUBSTRATE

PROCESS FOR FORMING A METAL OR METAL COMPOUND COATING ON A FACE OF A CONTINUOUSLY LONGITUDINALLY MOVING GLASS RIBBON AND APPARATUS FOR USE IN FORMING SUCH COATING

A process for forming a metal or metal compound coating on a face of a continuously longitudinally moving glass ribbon which comprises the steps of contacting the glass ribbon face while it is at elevated temperature, at a zone along the ribbon path, with a fluid medium containing a substance which undergoes chemical reaction or decomposition to form the metal or metal compound on the face, discharging at least part of the fluid medium against the face in stream formation having (1) a velocity component in the direction of movement of the glass ribbon and (23 an inclination to the face so that the acute or mean acute angle of incidence of the stream formation on the face, measured in a plane normal to the face and parallel with the direction of the glass ribbon movement, is not more than 60.degree..

Vortex chamber lids for atomic layer deposition

Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing a centrally positioned gas dispersing channel, wherein a converging portion of the gas dispersing channel tapers towards a central axis of the gas dispersing channel and a diverging portion of the gas dispersing channel tapers away from the central axis. The chamber lid assembly further contains a tapered bottom surface extending from the diverging portion of the gas dispersing channel to a peripheral portion of the chamber lid assembly, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate and two conduits are coupled to gas inlets within the converging portion of the gas dispersing channel and positioned to provide a circular gas flow through the gas dispersing channel.

APPARATUS FOR CHEMICAL VAPOR DEPOSITION

본 발명은 화학 기상 증착 장치의 구조를 개선하여 증착이 이루어지는 반응로 내부로 유입되는 반응가스의 유동 속도가 실질적으로 균일하게 될 수 있도록 하여 피증착체에 대한 박막의 성장이 실질적으로 균일하게 이루어질 수 있도록 하는 화학 기상 증착 장치를 제공한다. The present invention improves the structure of the chemical vapor deposition apparatus so that the flow rate of the reaction gas flowing into the reactor in which the deposition is made can be substantially uniform, so that the growth of the thin film on the deposit can be made substantially uniform. A chemical vapor deposition apparatus is provided. 본 발명의 일 실시예에 따른 화학 기상 증착 장치는 ,챔버; 상기 챔버 내에 마련되어 피증착체에 대한 증착이 이루어지는 반응로; 및 외부로부터 도입되는 반응가스를 저장하여 상기 반응로로 유입되도록 하며, 도입되는 반응가스의 유동 경로를 따라 단면적이 변화하는 리저버를 포함한다. Chemical vapor deposition apparatus according to an embodiment of the present invention, the chamber; A reactor provided in the chamber to deposit the deposited material; And a reservoir for storing the reaction gas introduced from the outside to be introduced into the reactor, and having a cross-sectional area changed along the flow path of the reaction gas to be introduced.

VORTEX CHAMBER LIDS FOR ATOMIC LAYER DEPOSITION

Gas feeding device, treating device, treating method, and storage medium

Provided is a gas feeding device (3) comprising a body portion (31) forming a substantially conical gas passage space (32) for passing gases from the side of a radially reduced end (32a) to the side of a radially enlarged end (32b), gas introduction ports (61a to 63a, 61b to 63b and 64) formed in the gas passage space (32) on the side of the radially reduced end (32a), for introducing the gases into the gas passage space (32), and a plurality of partition members (41 to 46) disposed in the gas passage space (32) and defining the gas passage space (32) concentrically. The diverging degree of one of the partition members (42 to 46) is larger than the diverging degree of that of the partition members (41 to 45), which is adjacent, on the radially inner side, to the former. As a result, the conductance in the gas passage inside of the gas feeding device can be made larger than that of the gas shower head of the prior art, thereby improving the replaceability of the gases in the gas passage.

PROCESS GAS DELIVERY FOR SEMICONDUCTOR PROCESS CHAMBER

Methods and apparatus for a gas delivery assembly are provided herein. In some embodiments, the gas delivery assembly includes a gas inlet funnel having a first volume; and a gas conduit having an inlet to receive a gas and an outlet to facilitate the flow of the gas out of the gas conduit and into the first volume, wherein the gas conduit has a second volume less than the first volume, and an increasing cross-section from a first cross-section proximate the inlet to a second cross-section proximate the outlet, wherein the second cross-section is non-circular. In some embodiments, each conduit has a longitudinal axis that intersects a central axis of the gas inlet funnel.

ATOMIC-LAYER-DEPOSITED TANTALUM NITRIDE AND ALPHA-PHASE TANTALUM AS BARRIER LAYERS FOR COPPER METALLIZATION

A method for forming a metal interconnect on a substrate is provided. In one aspect, the method comprises depositing a refractory metal containing barrier layer having a thickness of less than 2nm so as to exhibit a crystalline like structure and is being sufficient to inhibit atomic migration on at least a portion of a metal layer by alternately introducing one or more pulses of a metal-containing compound and one or more pulses of a nitrogen-containing compound; depositing a seed layer on at least a portion of the barrier layer; and depositing a second metal layer on at least a portion of the seed layer.

FILM CASSETTE FOR GASEOUS VAPOR DEPOSITION

A cassette for supporting a film during a gaseous vapor deposition process includes a central shaft having first and second end plates. A rib on each end plate forms a spiral groove able to accept an edge of a film. Each rib has a cross sectional configuration having substantially linear major edges, a predetermined width dimension and a predetermined average thickness dimension, and a width-to-thickness aspect ratio of at least 2:1. The rib could be substantially rectangular with an optional flow spoiler at the free end or substantially wedge-shaped. The inter spoke spacing between end plates is at least three hundred millimeters (300 mm) and is also greater than the width dimension of a film substrate at a gaseous deposition temperature. The width dimension of each rib is between about 0.5% to about 2.0% of the interspoke spacing.

ENHANCED COPPER GROWTH WITH ULTRATHIN BARRIER LAYER FOR HIGH PERFORMANCE INTERCONNECTS

A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

DEPOSITION REACTOR WITH PLASMA SOURCE

REACTOR FOR GAS TREATMENT OF A SUBSTRATE

REACTION APPARATUS

PURPOSE: To minimize the lowering of efficiency due to the interference with the wall surface of a downstream chamber or the diffusion of a stream, by constituting a reaction apparatus by arranging a flow control system by a contraction and expansion nozzle. CONSTITUTION: A flow control system by a contraction and expansion nozzle 1 is arranged to constituted a reaction apparatus and the stream of a stock material or reaction product is formed into a beam state. When the stream from the outflow port 1C of the contraction and expansion nozzle 1 comes to a proper expansion stream, said stream comes to one having speed distribution almost uniform in the cross-sectional direction along the inner wall surface direction of the outflow port 1C of the contraction and expansion nozzle 1 to be formed into a beam like stream. Because the stream is formed into the beam like one and the diffusion thereof is suppressed to a min. degree, the stock material or reaction product injected from the contraction ...

РЕАКТОР ДЛЯ ОСАЖДЕНИЯ С ПЛАЗМЕННЫМ ИСТОЧНИКОМ

FIELD: metallurgy. SUBSTANCE: invention relates to reactor and to deposition of metal plies on the substrate. Reactor feeder confines the expansion space meant for forcing the reagents as a downward flow from plasma source (110) to reaction chamber. Expansion space is expanded toward the reaction chamber (335). Lifting mechanism is meant for loading of at least one substrate (360) in reaction chamber from top side of reaction chamber (335). EFFECT: deposition by means of serial self-saturating surface reactions. 13 cl, 17 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 571 547 C2 (51) МПК C23C 16/455 (2006.01) C23C 14/32 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ (21)(22) Заявка: ИЗОБРЕТЕНИЯ К ПАТЕНТУ 2013148924/02, 07.04.2011 (24) Дата начала отсчета срока действия патента: 07.04.2011 (43) Дата публикации заявки: 20.05.2015 Бюл. № 14 (73) Патентообладатель(и): ПИКОСАН ОЙ (FI) R U Приоритет(ы): (22) Дата подачи заявки: 07.04.2011 (72) Автор(ы): КИЛЬПИ, Вяйнё (FI), ЛИ, Вэй-Минь (FI), МАЛИНЕН, Тимо (FI), КОСТАМО, Юхана (FI), ЛИНДФОРС, Свен (FI) (45) Опубликовано: 20.12.2015 Бюл. № 35 (85) Дата начала рассмотрения заявки PCT на национальной фазе: 07.11.2013 2 5 7 1 5 4 7 (56) Список документов, цитированных в отчете о поиске: US20050271812A1, 08.12.2005. RU2405063C2, 27.11.2010. RU2099440C1, 20.12.1997. SU769834A1, 07.09.1981. UA69453C2, 15.09.2004. ЕА12961В1, 26.02.2010. US20100183825A1,22.07.2010. US20050019494A1,27.01.2005. FI 2011/050302 (07.04.2011) C 2 C 2 (86) Заявка PCT: (87) Публикация заявки PCT: R U 2 5 7 1 5 4 7 WO 2012/136875 (11.10.2012) Адрес для переписки: 197101, Санкт-Петербург, а/я 128, "АРСПАТЕНТ", С.В. Новоселовой (54) РЕАКТОР ДЛЯ ОСАЖДЕНИЯ С ПЛАЗМЕННЫМ ИСТОЧНИКОМ (57) Реферат: Изобретение относится к реактору и способу Подъемный механизм предназначен для загрузки осаждения слоев металла на подложку. Подающее по меньшей мере одной подложки (360) в устройство реактора ограничивает реакционную камеру с верхней стороны ...

Atomic layer deposition apparatus

An apparatus 1 for processing a target comprising an outer chamber 2 for containing a first environment and an inner chamber 3 positioned within the outer chamber. The inner chamber is arranged when in use to contain the target and a process environment for applying a process to the target. A control system is used to provide the outer chamber with the first environment and the inner chamber with the process environment. The outer chamber can be made of an aluminium alloy and the inner chamber from stainless steel. Heaters 16 and a fan 15 are present for heating and cooling the chambers. The control system may take the form of a gas delivery system comprising a number of nozzles. A method of processing a target within the chamber is also disclosed.

REACTION APPARATUS

A reaction apparatus is provided which comprises a flow control system provided with a convergent-divergent nozzle. This nozzle is operated under the optimum expansion condition, and the differential coefficient of the streamline of the channel inside the nozzle varies continuously and reaches zero at a throat of the nozzle.

INVERTED POSITIVE VERTICAL FLOW CHEMICAL VAPOR DEPOSITION CHAMBER

Film cassette for gaseous vapor deposition

Apparatuses and methods for atomic layer deposition of hafnium-containing high-k dielectric materials

METHOD FOR ADJUSTING THE RATE OF FINE PARTICLES

POLLUTION CONTROL DEVICE FOR RACK UPRIGHT GAS PHASE DEPOSITION.

APPAREIL POUR REGULER L'ECOULEMENT DE PARTICULES FINES

L'INVENTION CONCERNE UN APPAREIL POUR REGULER L'ECOULEMENT DE PARTICULES FINES. IL COMPREND PLUSIEURS TUYERES CONVERGENTES-DIVERGENTES 1 PLACEES SUR LE TRAJET D'ECOULEMENT DES PARTICULES FINES D'UNE CHAMBRE AMONT 3 VERS UNE CHAMBRE AVAL 4 DANS LAQUELLE EST DISPOSE UN SUBSTRAT 6. UNE POMPE 5 ETABLIT LE VIDE DANS LA CHAMBRE 4 ET LA CHAMBRE 3 EST ALIMENTEE EN GAZ PORTEUR ET EN PARTICULES FINES. DOMAINE D'APPLICATION : PROJECTION DE PARTICULES FINES POUR FORMER DES FILMS, DES PELLICULES, DES MATERIAUX COMPOSITES, POUR LE DOPAGE, ETC.

Appareil de dépôt chimique en phase vapeur pour former un film mince

L'invention concerne un dispositif formant un film mince qui est configuré pour éjecter une matière gazeuse contre un substrat supporté dans une chambre de réaction afin de former un film mince sur le substrat. Selon l'invention, une douche de gaz de contrôle 6 est disposée pour entourer la douche 2 de matière gazeuse afin d'éjecter un écoulement de gaz de contrôle pour configurer l'écoulement de la matière gazeuse sous la forme d'un faisceau, laquelle se dirige vers un substrat 3. L'invention s'applique notamment à la formation de couches minces en électronique.

REACTION SYSTEM FOR GROWING A THIN FILM

An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet. © KIPO & WIPO 2007 ...

VORTEX CHAMBER LIDS FOR ATOMIC LAYER DEPOSITION

Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing a centrally positioned gas dispersing channel, wherein a converging portion of the gas dispersing channel tapers towards a central axis of the gas dispersing channel and a diverging portion of the gas dispersing channel tapers away from the central axis. The chamber lid assembly further contains a tapered bottom surface extending from the diverging portion of the gas dispersing channel to a peripheral portion of the chamber lid assembly, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate and two conduits are coupled to gas inlets within the converging portion of the gas dispersing channel and positioned to provide a circular gas flow through the gas dispersing channel. © KIPO & WIPO 2009 ...

Reaction system for growing a thin film

Reactor for gas treatment of a substrate

The present document discloses a gas inlet device (21, 21a-21k) for use in a reactor for gas treatment of a substrate. The gas inlet device comprises an inlet niche having a back wall (233), and a side wall (234, 235) extending in a downstream direction (F) from the back wall (233) towards an inlet niche opening (212), an impingement surface (243), a gas orifice (210), which is configured to direct a gas flow towards the impingement surface (243), and a taper surface (244, 245), extending downstream of the impingement surface (243), such that a flow gap (213) having, along the downstream direction (F), gradually increasing cross sectional area, is formed between the side wall (234, 235) and the taper surface (244, 245). The document further discloses a mixing device, a gas outlet device a reactor and the use of such reactor.

APPARATUS FOR CYCLICAL DEPOSITION OF THIN FILMS

An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.

MODULAR GAS INJECTION DEVICE

Embodiments of the invention relate to a modular injector (100) for injecting a gas into a processing chamber (42), comprising at least two adjacent injectors (1 ), each injector comprising an inlet for receiving a gas wave or a gas flow, a flow shaping section (2) having left and right sidewalls that diverge according to a divergence angle relative to a propagation axis of the gas, for expanding the gas in a direction perpendicular to the propagation axis, and an outlet for expelling the gas. The modular injector forms an equivalent large injector having an equivalent large outlet which includes the outlets of the adjacent injectors and expands the gas over the equivalent large outlet.

Process gas delivery for semiconductor process chambers

Methods for gas delivery to a process chamber are provided herein. In some embodiments, a method may include flowing a process gas through one or more gas conduits, each gas conduit having an inlet and an outlet for facilitating the flow of gas through the gas conduits and into a gas inlet funnel having a second volume, wherein each gas conduit has a first volume less than the second volume, and wherein each gas conduit has a cross-section that increases from a first cross-section proximate the inlet to a second cross-section proximate the outlet but excluding any intersection points between the gas inlet funnel and the gas conduit, and wherein the second cross-section is non-circular; and delivering the process gas to the substrate via the gas inlet funnel.

Film-forming system and film-forming method

A method and apparatus for performing multiple deposition processes is provided. In one embodiment, the apparatus includes a chamber body (102) and a gas distribution assembly (130) disposed on the chamber body. The method comprises positioning a substrate surface (110) to be processed within the chamber body, delivering two or more compounds into the chamber body utilizing the gas distribution assembly on the chamber body to deposit a film comprising a first material, and then delivering two or more compounds into the chamber body utilizing the gas distribution assembly disposed on the chamber body to deposit a film comprising a second material. The gas distribution assembly includes a gas conduit in fluid communication with the chamber body, two or more isolated gas inlets equipped with one or more high speed actuating valves (140A, 140B) in fluid communication with the gas conduit, and a mixing channel in fluid communication with the gas conduit. The valves are adapted to alternately ...

COATING METHOD

基板洗浄装置及び真空処理システム

Depositing semiconductor film on wafer used in production of semiconductor device comprises allowing gas to flow approximately horizontally to surface of wafer

Depositing a semiconductor film on a wafer comprises allowing a gas to flow approximately horizontally to the surface of the wafer. The speed and/or the pressure of the gas can be changed so that the gas is introduced at a constant flow rate. An Independent claim is also included for a device for carrying out the process comprising a reactor (10) containing the wafer (100) and having a gas inlet opening (21) for introducing the gas onto the wafer, a speed control unit for controlling the speed of the of the gas, and a pressure control unit for controlling the pressure of gas. Preferred Features: The pressure of the gas is adjusted to 0.01-2 atmospheres.

CONTROLLING DENISITY OF PARTICLES

A process for controlling a density of fine particles comprises: providing a convergent-divergent nozzle 1 in a flow path of said fine particles; and allowing said fine particles to pass through said nozzle. The ratio of upstream to downstream pressure (vacuum) and the ratio of the nozzle throat to the nozzle outlet cover may also be selected to ensure the density. ...

CONTROLLING FLOW OF PARTICLES

An apparatus for controlling a flow of fine particles comprises a plurality of convergent-divergent nozzles 1 in the flow path of said fine particles. The particles impinge on a target 6 in a vacuum chamber 4. The particles may be ionised. ...

APPARATUS FOR CONTROLLING FLOW OF FINE PARTICLES

COATING OF GLASS

... 1516032 Coating glass BFG GLASS GROUP 4 April 1977 [13 April 1976] 15063/76 Heading C1M In coating a moving continuous glass ribbon 1, a fluid medium 10 which comprises the coating material or a precursor thereof is supplied to the hot ribbon face in a stream or streams at least one of which has a velocity component in the direction of motion 2 of the ribbon and which forms an angle of not more than 60‹ with the glass surface. The glass may be a ribbon produced by a float process. The fluid may be a vapour or liquid spray.

CONTROLLING VELOCITY OF PARTICLES

A process for controlling a velocity of fine particles comprises: providing a convergent-divergent nozzle 1 in a flow path of said fine particles; and causing a pressure ratio P/Po of a pressure P in a downstream side to a pressure Po in a upstream side to become a critical ratio of pressure or less. The apparatus may comprise also flow chamber 3, vacuum chambers 4a and b, adjustable orifice skimmer 7, shut off valve 13 and target 6 movable by cylinder 14. ...

REACTION APPARATUS

A reaction apparatus is provided which comprises a flow control system provided with a convergent-divergent nozzle. This nozzle is operated under the optimum expansion condition, and the differential coefficient of the streamline of the channel inside the nozzle varies continuously and reaches zero at a throat of the nozzle.

APPARATUS AND PROCESS FOR CONTROLLING FLOW OF FINE PARTICLES

An apparatus for controlling a flow of fine particles is provided which comprises a convergentdivergent nozzle in a flow path of the fine particles. The nozzle may be operated under an optimum expansion condition, and the differential coefficient of the streamline at the channel inside the nozzle varies continuously and is equal to zero at a throat portion of the nozzle.

FILM FORMING APPARATUS

APPARATUS TO CONTROL the FLOW OF FINE PARTICLES

L'INVENTION CONCERNE UN APPAREIL POUR REGULER L'ECOULEMENT DE PARTICULES FINES. IL COMPREND PLUSIEURS TUYERES CONVERGENTES-DIVERGENTES 1 PLACEES SUR LE TRAJET D'ECOULEMENT DES PARTICULES FINES D'UNE CHAMBRE AMONT 3 VERS UNE CHAMBRE AVAL 4 DANS LAQUELLE EST DISPOSE UN SUBSTRAT 6. UNE POMPE 5 ETABLIT LE VIDE DANS LA CHAMBRE 4 ET LA CHAMBRE 3 EST ALIMENTEE EN GAZ PORTEUR ET EN PARTICULES FINES. DOMAINE D'APPLICATION : PROJECTION DE PARTICULES FINES POUR FORMER DES FILMS, DES PELLICULES, DES MATERIAUX COMPOSITES, POUR LE DOPAGE, ETC. THE INVENTION RELATES TO AN APPARATUS FOR REGULATING THE FLOW OF FINE PARTICLES. IT INCLUDES SEVERAL CONVERGENT-DIVERGENT TULES 1 PLACED ON THE FLOW PATH OF THE FINE PARTICLES FROM AN UPPER CHAMBER 3 TO A DOWNSTREAM CHAMBER 4 IN WHICH A SUBSTRATE 6 IS AVAILABLE. A PUMP 5 ESTABLISHES THE VACUUM IN CHAMBER 4 AND CHAMBER 3 IS SUPPLIED WITH CARRIER GAS AND FINE PARTICLES. FIELD OF APPLICATION: PROJECTION OF FINE PARTICLES TO FORM FILMS, FILMS, COMPOSITE MATERIALS, FOR DOPING, ETC.

METHOD OF

GAS FEEDING DEVICE, TREATING DEVICE, TREATING METHOD, AND STORAGE MEDIUM

Atomic layer deposition with plasma source

FILM FORMATION APPARATUS, FILM FORMATION METHOD, AND STORAGE MEDIUM

In forming an oxide film on a substrate, the present invention is to obtain an oxide film with good properties without using a heating tool to heat a substrate and also to prevent excessive pressure increase in a treatment vessel. A film formation apparatus is configured so that the substrate is to be alternately located on a first area and a second area repetitively, by rotating a table relatively as to the first area and the second area. A raw material gas is supplied to the first area, and a processing space forming member is elevated relatively as to the table in the second area. In the processing space configured by the processing space forming part, an atmospheric gas including ozone is supplied and also energy is supplied to forcibly dissolve the ozone, and thus oxidation of the raw material is performed by the dissolution of the ozone. Also, installed is a partition tool which converts the processing space into a state of being connected to a buffer area to which an inert gas is ...

ATOMIC-LAYER-DEPOSITED TANTALUM NITRIDE AND ALPHA-PHASE TANTALUM AS BARRIER LAYERS FOR COPPER METALLIZATION

A method for forming a metal interconnect on a substrate is provided. In one aspect, the method comprises depositing a refractory metal containing barrier layer having a thickness of less than 2nm so as to exhibit a crystalline like structure and is being sufficient to inhibit atomic migration on at least a portion of a metal layer by alternately introducing one or more pulses of a metal- containing compound and one or more pulses of a nitrogen-containing compound; depositing a seed layer on at least a portion of the barrier layer; and depositing a second metal layer on at least a portion of the seed layer. © KIPO & WIPO 2007 ...

Reaction system for growing a thin film

Plasma processing apparatus

A plasma processing apparatus includes a plasma generation chamber in which plasma active species are generated, a process chamber configured to accommodate processing target objects stacked in a vertical direction, the plasma active species generated in the plasma generation chamber being supplied into the process chamber, a plasma source gas supply pipe disposed inside the plasma generation chamber and extending in the vertical direction, a plasma source gas being introduced from one end of the plasma source gas supply pipe and discharged through gas discharge holes formed in the plasma source gas supply pipe in the vertical direction, and a pair of plasma electrodes, arranged to face each other, configured to apply an electric field to the plasma source gas discharged into the plasma generation chamber. A size of a discharge area interposed between the pair of plasma electrodes is varied in the vertical direction.

HIGH ACCURACY VAPOR GENERATION AND DELIVERY FOR THIN FILM DEPOSITION

The present invention involves injecting a liquid and gas into a vapor holding chamber held at a sufficiently high temperature to insure all the liquid injected is vaporized and held in the chamber 30 as a vapor. The gas/vapor mixture is then delivered to the deposition chamber 70 in which the deposition substrate is held.

Reaction apparatus which introduces one reacting substance within a convergent-divergent nozzle

A reaction apparatus is provided which comprises a flow control system provided with a convergent-divergent nozzle. This nozzle is operated under the optimum expansion condition, and the differential coefficient of the streamline of the channel inside the nozzle varies continuously and reaches zero at a throat of the nozzle.

Modular gas injection device

Embodiments of the device relate to a modular injector (100) for injecting a gas into a processing chamber (42), comprising at least two adjacent injectors (1), each injector comprising an inlet for receiving a gas wave or a gas flow, a flow shaping section (2) having left and right sidewalls that diverge according to a divergence angle relative to a propagation axis of the gas, for expanding the gas in a direction perpendicular to the propagation axis, and an outlet for expelling the gas. The modular injector forms an equivalent large injector having an equivalent large outlet which includes the outlets of the adjacent injectors and expands the gas over the equivalent large outlet.

PLASMA ATOMIC LAYER DEPOSITION SYSTEM AND METHOD

A gas deposition chamber includes a volume expanding top portion and a substantially constant volume cylindrical middle portion and optionally a volume reducing lower portion. An aerodynamically shaped substrate support chuck is disposed inside the gas deposition chamber with a substrate support surface positioned in the cylindrical middle portion. The top portion reduces gas flow velocity, the aerodynamic shape of the substrate support chuck reduces drag and promotes laminar flow over the substrate support surface, and the lower portion increases gas flow velocity after the substrate support surface. The gas deposition chamber is configurable to 200 mm diameter semiconductor wafers using ALD and or PALD coating cycles. A coating method includes expanding process gases inside the deposition chamber prior to the process gas reaching a substrate surface. The method further includes compressing the process gases inside the deposition chamber after the process gas has flowed passed the substrate ...

Integration of ALD tantalum nitride and alpha-phase tantalum for copper metallization application

A method for forming a metal interconnect on a substrate is provided. In one aspect, the method comprises depositing a refractory metal containing barrier layer having a thickness that exhibits a crystalline like structure and is sufficient to inhibit atomic migration on at least a portion of a metal layer by alternately introducing one or more pulses of a metal-containing compound and one or more pulses of a nitrogen-containing compound; depositing a seed layer on at least a portion of the barrier layer; and depositing a second metal layer on at least a portion of the seed layer.

MODULAR GAS INJECTION DEVICE

Embodiments of the device relate to a modular injector (100) for injecting a gas into a processing chamber (42), comprising at least two adjacent injectors (1), each injector comprising an inlet for receiving a gas wave or a gas flow, a flow shaping section (2) having left and right sidewalls that diverge according to a divergence angle relative to a propagation axis of the gas, for expanding the gas in a direction perpendicular to the propagation axis, and an outlet for expelling the gas. The modular injector forms an equivalent large injector having an equivalent large outlet which includes the outlets of the adjacent injectors and expands the gas over the equivalent large outlet.

СПОСОБ ПОДАЧИ ГАЗОВ В РЕАКТОР ДЛЯ ВЫРАЩИВАНИЯ ЭПИТАКСИАЛЬНЫХ СТРУКТУР НА ОСНОВЕ НИТРИДОВ МЕТАЛЛОВ III ГРУППЫ И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ

FIELD: chemical industry.SUBSTANCE: invention relates to the coatings chemical application technology by the gaseous compounds decomposition, in particular, to the gases into the reaction chamber introduction methods. Gases to the reactor supplying method for the group III metals nitrides based epitaxial structures growing includes supply into the reactor 5 of at least two streams of reactive gases through inputs 1, 2, at least one of which is mixed with the carrier gas, at that, as the group III metals source using the trimethyl aluminum, trimethyl indium, trimethylgallium, triethylgallium, or mixtures thereof, and ammonia as the nitrogen source, at that, before supply into the reactor 5, the gas flows 1, 2 are directed to connected to the reactor 5 at least one mixing chamber 3 for the gaseous mixture preparation, after which the resultant gaseous mixture is directed to the reactor 5 through the flow generator 4, configured to supply gases to the reactor 5 under laminar flow conditions, wherein, the chamber 3 walls and the flow generator 4 are heated and maintained at the temperature of 40÷400 °C, at that, the mixing chamber 3 internal volume satisfies the relation V < Q ⋅ (P/ P) 4T / T) ⋅ 1 s, where V is the mixing chamber internal volume, cm; Q is the full total gas flow through the chamber, expressed in cm/s, under standard conditions; P, Tare the temperature and pressure standard values (P = 10 Pa, T = 273.15 K); P is the pressure in the mixing chamber; T is the minimum temperature in the mixing chamber. Due to these solutions, into the reactor a gaseous mixture with the specified parameters is supplied, and at the same time the vortices generation is eliminated. Mixing chamber maximum allowable volume is chosen taking into account the process parameters and the heterojunctions required sharpness.EFFECT: as a result, enabling the possibility to obtain the Group III metals nitrides based multilayer epitaxial structures with specified parameters with ...

АТОМНО-СЛОЕВОЕ ОСАЖДЕНИЕ С ПЛАЗМЕННЫМ ИСТОЧНИКОМ

... 1. Способ, включающий:эксплуатацию реактора плазменного атомно-слоевого осаждения, конфигурация которого обеспечивает осаждение материала в реакционной камере на по меньшей мере одну подложку посредством последовательных самонасыщающихся поверхностных реакций, иобеспечение потока газа из источника химически неактивного газа в расширительное устройство для подачи радикалов, открывающееся в реакционную камеру, по существу в течение всего цикла осаждения.2. Способ по п. 1, отличающийся тем, чтообеспечение потока газа из источника химически неактивного газа в устройство для подачи радикалов через плазменный источник осуществляют в течение периода импульса плазменного прекурсора, входящего в период плазменного атомно-слоевого осаждения, причем газ в течение этого периода импульса функционирует как газ-носитель для генерируемых радикалов.3. Способ по п. 1, отличающийся тем, чтообеспечение потока газа из источника химически неактивного газа в устройство для подачи радикалов через плазменный источник ...

Apparatus for cyclical deposition of thin films

REACTION APPARATUS

Dispositif d'introduction des gaz dans la chambre d'un réacteur d'épitaxie, chambre de réacteur comportant un tel dispositif d'introduction de gaz, et utilisation d'une telle chambre pour la réalisation de couches semiconductrices.

Dispositif d'introduction des gaz dans la chambre d'un réacteur d'épitaxie en phase vapeur, laquelle inclut au moins un porte-échantillon (14), ce dispositif comprenant une ou plusieurs voies d'introduction de gaz débouchant dans le réacteur par des orifices. Les orifices sont des fentes (1a, 1b) disposées de manière à permettre l'introduction des gaz sous la forme de flux laminaires parallèles au porte-échantillon (14). Dans un exemple de mise en ùoeuvre, le dispositif comporte plusieurs fentes indépendantes, parallèles et superposées, disposées à faible distance les unes des autres dans un plan perpendiculaire à celui de l'échantillon et de la direction du flux gazeux. Dans un autre exemple, le dispositif ne comporte qu'une fente. L'utilisation du dispositif prévoit l'introduction par chaque fente soit d'un seul gaz, soit de plusieurs gaz qui ne réagissent pas entre eux. Application: Réalisation de couches semiconductrices par MOVPE.

Injector for injecting gas in treatment chamber, comprises inlet for receiving gas wave or gas pulse, curved section for dilating the gas in a direction perpendicular to propagation axis of gas, and outlet for ejecting the gas

L'invention concerne un injecteur (11) pour injecter un gaz dans une chambre de traitement, comprenant une entrée (21) pour recevoir une onde de gaz ou une impulsion de gaz, une section de mise en forme (20) pour dilater le gaz dans une direction (YY') perpendiculaire à un axe de propagation (XX', X1X1') du gaz, et une sortie (22) pour éjecter le gaz. La section de mise en forme présente une première et une deuxième paroi (23) qui divergent selon un angle de divergence (A1) par rapport à l'axe de propagation du gaz, et comprend des moyens pour ralentir la vitesse du gaz à proximité du centre de la section de mise en forme, par rapport à la vitesse du gaz à proximité d'au moins une paroi.

성막 장치, 성막 방법, 기억 매체

... 기판에 산화막을 성막함에 있어서, 기판을 가열하는 가열 기구를 사용하지 않고 양호한 성질의 산화막을 얻음과 함께, 처리 용기 내의 과잉의 압력 상승을 방지하는 것. 제1 영역 및 제2 영역에 대하여 테이블이 상대적으로 회전함으로써, 기판이 제1 영역과 제2 영역에 교대로 반복해서 위치되도록 장치를 구성한다. 제1 영역에는 원료 가스가 공급되고, 제2 영역에서는 테이블에 대하여 상대적으로 처리 공간 형성 부재가 승강한다. 상기 처리 공간 형성부에 의해 구성되는 처리 공간에는, 오존을 포함하는 분위기 가스가 공급됨과 함께 오존이 강제적으로 분해되도록 에너지가 공급되어, 이 오존의 분해에 의해 원료의 산화를 행한다. 또한, 처리 공간을 불활성 가스가 공급되는 버퍼 영역에 연통한 상태와, 버퍼 영역으로부터 구획된 상태로 전환하는 구획 기구가 설치되어, 상기 분해시의 처리 공간의 압력 상승을 억제한다.

반도체 처리를 위한 가스 분배 샤워헤드

... 본 명세서에 개시된 실시예들은 일반적으로 반도체 처리 챔버 내로 처리 가스들의 개선된 균일한 분배를 제공하기 위한 가스 분배 어셈블리에 관한 것이다. 가스 분배 어셈블리는 가스 분배 플레이트, 차단 플레이트, 및 이중 구역 샤워헤드를 포함한다. 가스 분배 어셈블리는 독립적인 중심 대 에지 유동 구역성, 독립적인 2 프리커서 전달, 혼합 매니폴드를 통한 2 프리커서 혼합, 및 가스 분배 플레이트 내에서의 순환적 질량 흐름 분배를 제공한다.

DEPOSITION APPARATUS WHICH UNIFORMLY SUPPLIES PROCESSING GAS PASSING THROUGH A GAS MOVEMENT PIPE TO A SUBSTRATE

PURPOSE: A deposition apparatus is provided to directly supply source gases on a substrate by allowing a gas extrusion part to eject source gases supplied to the substrate, in the same direction of the substrate. CONSTITUTION: A deposition apparatus includes a substrate support(160); a reaction chamber wall(161) dividing the reaction chamber in a state of being contacted with the substrate support; a gas inlet tube(110) having a plurality of divided gas inlets for flowing a plurality of different reaction source gases separately; a gas movement pipe(130) for being connected to the gas inlet tube and supplying the gas to the reaction zone; a perforated plate having a plurality of minute pipes; and a spiral flow inducement board(132) equipped between the perforated plate and gas movement pipe. © KIPO 2009 ...

Thin film encapsulation processing system and process kit

GAS SUPPLY DEVICE

A gas supply device disposed opposite to a substrate mounted on a stage in a processing container and supplying a process gas for processing the substrate comprises a top plate member having a recess formed to spread gradually toward the stage in order to constitute a gas diffusion space at a position facing the substrate on the stage, and a gas supply nozzle projecting into the recess from the top thereof and having a plurality of gas supply holes along the circumferential direction of the recess.

APPARATUS FOR GASEOUS VAPOR DEPOSITION

A vapor deposition apparatus includes an insert within which a material is deposited on the surface of a film. A cassette includes end plates each having a rib that edgewise receive a spiral wrapping of a film at least 300 mm wide. Spaces between turns of the wrapping define a gas flow channel and spaces between adjacent turns of one rib define inlet openings that communicate with the channel. Each rib has a predetermined width dimension, a predetermined average thickness dimension, and a width-to-thickness aspect ratio of at least 2:1. The spacing between end plates is at least 300 mm and is also greater than the film width at deposition temperature. The width dimension of each rib is between about 0.5% to about 2.0% of the end plate spacing. A diverging flow director contacts one end plate to directing gaseous fluid toward the inlet openings in that end plate.

Integration of ALD tantalum nitride and alpha-phase tantalum for copper metallization application

A method for forming a metal interconnect on a substrate is provided. The method includes depositing a refractory metal-containing barrier layer having a thickness less than about 20 angstroms on at least a portion of a metal layer by alternately introducing one or more pulses of a metal-containing compound and one or more pulses of a nitrogen-containing compound. The method also includes depositing a seed layer on at least a portion of the barrier layer, and depositing a second metal layer on at least a portion of the seed layer. The barrier layer provides adequate barrier properties and allows the grain growth of the metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

Metal compound coating on a face of a continuously longitudinally moving glass ribbon and apparatus for use in forming such coating

A process for forming a metal or metal compound coating on a face of a continuously longitudinally moving glass ribbon which comprises the steps of contacting the glass ribbon face while it is at elevated temperature, at a zone along the ribbon path, with a fluid medium containing a substance which undergoes chemical reaction or decomposition to form the metal or metal compound on the face, discharging at least part of the fluid medium against the face in stream formation having (1) a velocity component in the direction of movement of the glass ribbon and (2) an inclination to the face so that the acute or mean acute angle of incidence of the stream formation on the face, measured in a plane normal to the face and parallel with the direction of the glass ribbon movement, is not more than 60 DEG .

METHOD OF FEEDING GASES INTO A REACTOR TO GROW EPITAXIAL STRUCTURES BASED ON GROUP III NITRIDE METALS AND A DEVICE FOR CARRYING OUT SAID METHOD

The invention relates to methods for the chemical application of coatings by the decay of gaseous compounds, in particular to methods for injecting gases into a reaction chamber. The invention also relates to means for feeding gases into a reaction chamber, said means providing for the regulation of streams of reactive gases, and ensures the possibility of obtaining multi-layer epitaxial structures having set parameters and based on nitrides of group III metals while simultaneously increasing the productivity and cost-effectiveness of the process of the epitaxial growth thereof. Before being fed into a reactor, all of the gas streams are sent to a mixing chamber connected to the reactor, and are then fed into the reactor via a flux former under laminar flow conditions. The mixing chamber and the flux former are equipped with means for maintaining a set temperature. As a result of these solutions, a gaseous mixture with set parameters is fed into the reactor, and the formation of vortices ...

Method and system for controlling coating in non-line-of-sight locations

A method for coating a turbine engine component, said method includes the steps of: placing the component into a chamber; injecting a non-reactive carrier gas containing a coating material into the chamber; and forming a coating on a desired portion of the component by locally heating the desired portion of the component by redirecting a directed energy beam onto the desired portion of the component.

SUBSTRATE CLEANING APPARATUS AND VACUUM PROCESSING SYSTEM

A substrate cleaning apparatus includes a supporting unit, provided in a processing chamber having a gas exhaust port, for supporting a substrate; one or more nozzle units, each for ejecting gas clusters to a peripheral portion of the substrate supported by the supporting unit to remove unnecessary substances from the peripheral portion; and a moving mechanism for changing relative positions of the supporting unit and the nozzle unit during ejecting the gas clusters. Each nozzle unit discharges a cleaning gas having a pressure higher than that in the processing chamber so that the cleaning gas is adiabatically expanded to form aggregates of atoms and/or molecules.

GASZUFÜHRVORRICHTUNG ZUR ABSCHEIDUNG VON ATOMAREN SCHICHTEN

REAKTIONSAPPARATUR

CONTROLLING DENSITY OF FINE PARTICLES

Injector and method

METHOD AND APPARATUS FOR COATING A SUBSTRATE

FORMING A METAL COMPOUND COATING ON A FACE OF A CONTINUOUSLY

APPARATUS AND PROCESS FOR CONTROLLING FLOW OF FINE PARTICLES

In-situ chamber treatment and deposition process

Embodiments of the invention provide a method for treating the inner surfaces of a processing chamber and depositing a material on a during a vapor deposition process, such as atomic layer deposition (ALD) or by chemical vapor deposition (CVD). In one embodiment, the inner surfaces of the processing chamber and the substrate may be exposed to a reagent, such as a hydrogenated ligand compound during a pretreatment process. The hydrogenated ligand compound may be the same ligand as a free ligand formed from the metal-organic precursor used during the subsequent deposition process. The free ligand is usually formed by hydrogenation or thermolysis during the deposition process.; In one example, the processing chamber and substrate are exposed to an alkylamine compound (e.g., dimethylamine) during the pretreatment process prior to conducting the vapor deposition process which utilizes a metal-organic chemical precursor having alkylamino ligands, such as pentakis(dimethylamino) tantalum (PDMAT ...

A METHOD FOR REGULATING THE DENSITY OF FINE PARTICLES

PROCESS OF

METHOD AND DEVICE FOR PRODUCING A METAL OR A METAL COMPOUND OF A FACE OF A GLASS RIBBON MOVING CONTINUOUS LONGITUDINAL

DEVICE Of MODULAR GAS INJECTION

ALD SYSTEMS AND METHODS

A gas deposition system (1000) configured as a dual-chamber "tower" includes a frame (1140) for supporting two reaction chamber assemblies (3000), one vertically above the other. Each chamber assembly (3000) includes an outer wall assembly surrounding a hollow chamber (3070) sized to receive a single generation 4.5 (GEN 4.5) glass plate substrate through a load port. The substrate is disposed horizontally inside the hollow chamber (3070) and the chamber assembly (3000) includes removable and cleanable triangular shaped input (3150) and output (3250) plenums disposed external to the hollow chamber (3070) and configured to produce substantially horizontally directed laminar gas flow over a top surface of the substrate. Each chamber includes a cleanable and removable chamber liner assembly (6000) disposed inside the hollow chamber (3070) to contain precursor gases therein thereby preventing contamination of chamber outer walls (3010, 3020, 3030, 3040).

APPARATUS AND METHOD FOR UNLOADING A FILM CASSETTE FOR GASEOUS VAPOR DEPOSITION

The present invention is an apparatus and method for unloading a film cassette for gaseous vapor deposition. A coated film is transferred from a film cassette and immediately laminated to a protective film while minimizing touching, creasing or cracking the coated film.

ALD SYSTEMS AND METHODS

A gas deposition system (1000) configured as a dual-chamber "tower" includes a frame (1140) for supporting two reaction chamber assemblies (3000), one vertically above the other. Each chamber assembly (3000) includes an outer wall assembly surrounding a hollow chamber (3070) sized to receive a single generation 4.5 (GEN 4.5) glass plate substrate through a load port. The substrate is disposed horizontally inside the hollow chamber (3070) and the chamber assembly (3000) includes removable and cleanable triangular shaped input (3150) and output (3250) plenums disposed external to the hollow chamber (3070) and configured to produce substantially horizontally directed laminar gas flow over a top surface of the substrate. Each chamber includes a cleanable and removable chamber liner assembly (6000) disposed inside the hollow chamber (3070) to contain precursor gases therein thereby preventing contamination of chamber outer walls (3010, 3020, 3030, 3040).

VORTEX CHAMBER LIDS FOR ATOMIC LAYER DEPOSITION

Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing a centrally positioned gas dispersing channel, wherein a converging portion of the gas dispersing channel tapers towards a central axis of the gas dispersing channel and a diverging portion of the gas dispersing channel tapers away from the central axis. The chamber lid assembly further contains a tapered bottom surface extending from the diverging portion of the gas dispersing channel to a peripheral portion of the chamber lid assembly, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate and two conduits are coupled to gas inlets within the converging portion of the gas dispersing channel and positioned to provide a circular gas flow through the gas dispersing channel.

VORTEX CHAMBER LIDS FOR ATOMIC LAYER DEPOSITION

Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates (210) during atomic layer deposition processes. In one embodiment, a chamber (200) for processing substrates (210) is provided which includes a chamber (200) lid assembly (232) containing a centrally positioned gas dispersing channel (234), wherein a converging portion of the gas dispersing channel (234) tapers towards a central axis of the gas dispersing channel (234) and a diverging portion of the gas dispersing channel (234) tapers away from the central axis. The chamber (200) lid assembly (232) further contains a tapered bottom surface (260) extending from the diverging portion of the gas dispersing channel (234) to a peripheral portion of the chamber (200) lid assembly (232), wherein the tapered bottom surface (260) is shaped and sized to substantially cover the substrate and two conduits are coupled to gas inlets (236a,b) within the converging portion of the gas dispersing channel ...

ALD SYSTEMS AND METHODS

A gas deposition system (1000) configured as a dual-chamber "tower" includes a frame (1140) for supporting two reaction chamber assemblies (3000), one vertically above the other. Each chamber assembly (3000) includes an outer wall assembly surrounding a hollow chamber (3070) sized to receive a single generation 4.5 (GEN 4.5) glass plate substrate through a load port. The substrate is disposed horizontally inside the hollow chamber (3070) and the chamber assembly (3000) includes removable and cleanable triangular shaped input (3150) and output (3250) plenums disposed external to the hollow chamber (3070) and configured to produce substantially horizontally directed laminar gas flow over a top surface of the substrate. Each chamber includes a cleanable and removable chamber liner assembly (6000) disposed inside the hollow chamber (3070) to contain precursor gases therein thereby preventing contamination of chamber outer walls (3010, 3020, 3030, 3040).

Reaction system for growing a thin film

An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

Reaction system for growing a thin film

An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

Reaction chamber with removable liner

A reaction chamber assembly for thin film deposition processes or the like includes an outer wall assembly for enclosing an outer volume and a removable liner installed into the outer volume through an outer aperture for preventing precursors or reactants from coming into contact with internal surfaces of the outer wall assembly and forming thin film layers thereon. The removable liner encloses a reaction chamber and includes substrate support trays or the like for supporting substrates being coated. Thin film layers are formed onto internal surfaces of the removable liner instead of onto surfaces of the outer wall assembly. The removable liner may be disposable or may comprise stainless steel, which can be removed when contaminated, cleaned by abrasive blasting such as bead blasting, and replaced. Two removable liners can be used to periodically swap removable liners and clean one of the liners while the other is in service with minimal disruption to production coating schedules. Other removable cleanable elements such as input and output plenums, door liners and conduits comprising stainless steel can be periodically removed and cleaned by abrasive blasting.

STRUCTURE FOR IMPROVED GAS ACTIVATION FOR CROSS-FLOW TYPE THERMAL CVD CHAMBER

Embodiments described herein generally relate to a processing apparatus having a preheat ring for preheating the process gas. The preheat ring is disposed on a ring support. The preheat ring may have a segment adjacent a process gas inlet. The segment includes a top surface, and the top surface includes features to increase the surface area. In one embodiment, the feature is a plurality of protrusions. In another embodiment, the feature is a plurality of linear fins. In another embodiment, the preheat ring includes a first sub ring and a second sub ring disposed on the first sub ring, wherein the features are located on one segment of the second sub ring. 1. An apparatus for processing a substrate , comprising:a chamber body having a side wall and a bottom wall defining an interior processing region;a substrate support disposed in the interior processing region of the chamber body;a ring support; anda preheat ring disposed on the ring support, wherein the preheat ring comprises a plurality of fins disposed adjacent a process gas inlet.2. The apparatus of claim 1 , wherein the ring support is a lower liner coupled to the side wall.3. The apparatus of claim 1 , wherein the plurality of fins comprise silicon carbide or graphite coated with silicon carbide.4. The apparatus of claim 1 , wherein each of the plurality of fins has a first end and a second end that is opposite the first end claim 1 , and wherein the first and second ends are tapered to a point.5. The apparatus of claim 1 , wherein the plurality of fins occupy a segment that is one third of the preheat ring.6. The apparatus of claim 1 , wherein the plurality of fins are aligned along a flow path of process gases.7. The apparatus of claim 1 , wherein the plurality of fins are parallel to a center line bisecting the preheat ring.8. An apparatus for processing a substrate claim 1 , comprising:a chamber body having a side wall and a bottom wall defining an interior processing region;a substrate support disposed ...

Atomic layer deposition chamber with counter-flow multi inject

A chamber lid assembly includes: a central channel having an upper portion and a lower portion and extending along a central axis; a housing at least partially defining a first and a second annular channel, each fluidly coupled to the central channel; a first plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the first annular channel and the central channel; a second plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the second annular channel and the central channel, wherein the first and the second plurality of apertures are angled differently with respect to the central axis so as to induce opposing rotational flow of gases about the central axis; and a tapered bottom surface extending from the lower portion of the central channel to a peripheral portion of the chamber lid assembly.

Atomic Layer Deposition with Plasma Source

The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus. 1. A method comprising:operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions;pulsing a non-metal precursor in a three-way pulsing valve upstream of a remote plasma source into a carrier gas flow;generating radicals from the non-metal precursor in the plasma source;providing radicals as a top to bottom flow into the reaction chamber; andproviding a metal precursor into the reaction chamber from the side of the reaction chamber.2. The method of claim 1 , comprising:pulsing oxygen containing gas in the three-way pulsing valve upstream of a remote plasma source into the carrier gas flow.3. The method of claim 1 , comprising:generating radicals from oxygen gas in the plasma source.4. The method of claim 1 , wherein the non-metal precursor pulsed into the carrier gas flow is selected from the group consisting of nitrogen gas claim 1 , hydrogen gas claim 1 , ammonia gas claim 1 , and oxygen gas.5. The method of claim 1 , wherein a plurality of pulsing valves are provided in a carrier gas line implemented as a single gas line from a carrier gas source to the plasma source.6. The method of claim 5 , comprising:pulsing respective non-metal precursor in a respective three-way pulsing valve upstream of the remote plasma source into the carrier gas flow.7. The method of claim 1 , wherein the carrier gas is selected from the group consisting of argon gas and helium gas.8. The method of claim 1 , wherein the plasma ...

Plasma Processing Apparatus

A plasma processing apparatus includes a plasma generation chamber in which plasma active species are generated, a process chamber configured to accommodate processing target objects stacked in a vertical direction, the plasma active species generated in the plasma generation chamber being supplied into the process chamber, a plasma source gas supply pipe disposed inside the plasma generation chamber and extending in the vertical direction, a plasma source gas being introduced from one end of the plasma source gas supply pipe and discharged through gas discharge holes formed in the plasma source gas supply pipe in the vertical direction, and a pair of plasma electrodes, arranged to face each other, configured to apply an electric field to the plasma source gas discharged into the plasma generation chamber. A size of a discharge area interposed between the pair of plasma electrodes is varied in the vertical direction. 1. A plasma processing apparatus comprising:a plasma generation chamber in which plasma active species are generated;a process chamber configured to accommodate therein processing target objects which are stacked in a vertical direction, the plasma active species generated in the plasma generation chamber being supplied into the process chamber;a plasma source gas supply pipe disposed inside the plasma generation chamber and extending in the vertical direction, a plasma source gas serving as a plasma source being introduced from one end of the plasma source gas supply pipe and discharged through a plurality of gas discharge holes which is formed in the plasma source gas supply pipe in the vertical direction; anda pair of plasma electrodes, arranged to face each other, configured to apply an electric field to the plasma source gas discharged into the plasma generation chamber,wherein a size of a discharge area interposed between the pair of plasma electrodes is varied in the vertical direction.2. The plasma processing apparatus of claim 1 , wherein a ...

REACTOR SYSTEM INCLUDING A GAS DISTRIBUTION ASSEMBLY FOR USE WITH ACTIVATED SPECIES AND METHOD OF USING SAME

A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area. 1. A reactor system comprising:a first reaction chamber;a first remote plasma unit fluidly coupled to the first reaction chamber; anda gas distribution assembly that receives activated species from the first remote plasma unit, a gas distribution device;', 'a gas expansion area; and', 'a showerhead plate downstream of the gas distribution device and the expansion area, and, 'wherein the gas distribution assembly compriseswherein the gas distribution device distributes the activated species within the gas expansion area.2. The reactor system of claim 1 , wherein the gas distribution device comprises one or more holes.3. The reactor system of claim 1 , wherein the gas distribution device comprises one or more radially extending channels.4. The reactor system of claim 1 , wherein at least a portion of a surface of the gas distribution assembly is coated with aluminum oxide.5. The reactor system of claim 4 , wherein a thickness of the aluminum oxide is between about 100 nm and about 1 μm.6. The reactor system of claim 1 , wherein at least a portion of a surface of the gas distribution assembly is coated with yttrium oxide.7. The reactor system of claim 6 , wherein a thickness of the yttrium oxide is between about 100 nm and about 1 μm.8. The reactor system of claim 1 , wherein the showerhead plate comprises a first set of holes proximate a perimeter of the showerhead plate and a second set of holes proximate a center of the showerhead plate claim 1 , wherein a diameter of the first set of holes is greater than a diameter of the second set of holes.9. The reactor system of claim 1 , further comprising a second reaction chamber fluidly coupled to the first remote plasma unit.10. The reactor ...

Gas supply device, processing apparatus, processing method, and storage medium

A gas supply device 3 includes a device body 31 forming a substantially conical gas-conducting space 32 for conducting gases therethrough from a diametrally reduced end 32 a of the space 32 to a diametrally enlarged end 32 b thereof, gas introduction ports 61 a to 63 a, 61 b to 63 b , and 64 , each provided near the diametrally reduced end 32 a of the gas-conducting space 32 in the device body 31 to introduce the gases into the gas-conducting space 32 , and a plurality of partitioning members 41 to 46 provided in the gas-conducting space 32 of the device body 31 to partition the gas-conducting space 32 concentrically. The partitioning members 42 to 46 arranged adjacently to each other at a radially outer side of the gas-conducting space 32 are greater than the adjacently arranged partitioning members 41 to 45 at a radially inner side in dimensionally diverging rate per partitioning member. Thus, internal gas flow channels of the gas supply device have high gas conductance and enhanced gas replaceability, compared with those of the conventional gas showerhead.

Film forming apparatus

A film forming apparatus according to an embodiment includes: a film forming chamber configured to house therein a substrate to perform film forming processing; a gas supplier located in an upper part of the film forming chamber and configured to supply a process gas onto the substrate; and a heater configured to heat the substrate, wherein the film forming chamber has a temperature-increase suppression region being a lower part of the gas supplier and suppressing a temperature increase of the gas supplied to an upper part of the heater.

SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER READABLE RECORDING MEDIUM

A substrate processing apparatus capable of suppressing generation of by-products in a buffer space in even a single-wafer apparatus using the buffer space, and a method of manufacturing a semiconductor device are provided. The substrate processing apparatus includes a process chamber including a placement unit having a placing surface whereon a substrate is placed, a shower head including a buffer chamber and installed at upstream side of the process chamber, a gas supply system configured to alternately supply at least two types of gases into the process chamber via the buffer chamber of the shower head, and a heating unit configured to heat the buffer chamber to a first temperature and the process chamber to a second temperature which is higher than the first temperature while the at least two types of gases are supplied via the gas supply system. 1. A substrate processing apparatus comprising:a process chamber including a placement unit having a placing surface whereon a substrate is placed;a shower head including a buffer chamber and installed upstream side of the process chamber;a gas supply system configured to alternately supply at least two types of gases into the process chamber via the buffer chamber of the shower head; anda heating unit configured to heat the buffer chamber to a first temperature and the process chamber to a second temperature which is higher than the first temperature while the at least two types of gases are supplied via the gas supply system, wherein the heating unit comprises at least a first heating unit embedded in the placement unit and a second heating unit installed upstream side of the buffer chamber, and a temperature of the second heating unit is lower than that of the first heating unit while the at least two types of gases are supplied into the process chamber.2. (canceled)3. The substrate processing apparatus of claim 1 , wherein the second heating unit is provided on a lid of the shower head.4. The substrate processing ...

SUBSTRATE PROCESSING APPARATUS

A substrate processing apparatus includes a substrate support part provided with a first heating part, configured to heat a substrate, a gas supply part installed above the substrate support part and configured to supply a process gas to the substrate, a first exhaust port configured to exhaust an atmosphere of a process space existing above the substrate support part, a gas distribution part installed to face the substrate support part, a lid part provided with a second exhaust port configured to exhaust a buffer space existing between the gas supply part, and the gas distribution part, a rectifying part installed within the buffer space and provided with a second heating part at least partially facing the second exhaust port, the rectifying part configured to rectify the process gas, and a control part configured to control the second heating part. 1. A substrate processing apparatus , comprising:a substrate support part provided with a first heating part configured to heat a substrate;a gas supply part installed above the substrate support part and configured to supply a process gas to the substrate;a first exhaust port configured to exhaust an atmosphere of a process space existing above the substrate support part;a gas distribution part installed to face the substrate support part;a lid part provided with a second exhaust port configured to exhaust a buffer space existing between the gas supply part and the gas distribution part;a rectifying part installed within the buffer space and provided with a second heating part at least partially facing the second exhaust port, the rectifying part configured to rectify the process gas; anda control part configured to control the second heating part.2. The apparatus of claim 1 , wherein the second heating part is divided into a plurality of zones claim 1 , andthe control part is configured to control the second heating part such that a temperature of a zone facing the second exhaust port becomes higher than a temperature ...

METHODS AND APPARATUSES FOR SHOWERHEAD BACKSIDE PARASITIC PLASMA SUPPRESSION IN A SECONDARY PURGE ENABLED ALD SYSTEM

Disclosed are methods of depositing films of material on semiconductor substrates employing the use of a secondary purge. The methods may include flowing a film precursor into a processing chamber and adsorbing the film precursor onto a substrate in the processing chamber such that the precursor forms an adsorption-limited layer on the substrate. The methods may further include removing at least some unadsorbed film precursor from the volume surrounding the adsorbed precursor by purging the processing chamber with a primary purge gas, and thereafter reacting adsorbed film precursor while a secondary purge gas is flowed into the processing chamber, resulting in the formation of a film layer on the substrate. The secondary purge gas may include a chemical species having an ionization energy and/or a disassociation energy equal to or greater than that of O. Also disclosed are apparatuses which implement the foregoing processes. 1. An apparatus for depositing a film of material on a semiconductor substrate , the apparatus comprising:a processing chamber;a substrate holder in the processing chamber;a showerhead for flowing film precursor and primary purge gas into the processing chamber;a showerhead collar for flowing a secondary purge gas into the processing chamber;one or more primary flow valves for controlling flow of film precursor and flow of primary purge gas through the showerhead;one or more secondary flow valves for controlling flow of secondary purge gas through the showerhead collar;a valve-operated vacuum source for removing primary and secondary purge gases from the processing chamber, and for removing film precursor from the volume surrounding the substrate in the processing chamber;a plasma generator for generating a plasma in the processing chamber; and (a) operating the primary flow valve(s) to flow a film precursor into the processing chamber;', '(b) controlling conditions within the processing chamber such that film precursor adsorbs onto the ...

REACTOR FOR GAS TREATMENT OF A SUBSTRATE

The present document discloses a gas inlet device (-) for use in a reactor for gas treatment of a substrate. The gas inlet device comprises an inlet niche having a back wall (), and a side wall () extending in a downstream direction (F) from the back wall () towards an inlet niche opening (), an impingement surface (), a gas orifice (), which is configured to direct a gas flow towards the impingement surface (), and a taper surface (), extending downstream of the impingement surface (), such that a flow gap () having, along the downstream direction (F), gradually increasing cross sectional area, is formed between the side wall () and the taper surface (). 1. A gas inlet device for use in a reactor for gas treatment of a substrate , comprising:an inlet niche having a back wall, and a side wall extending in a downstream direction from the back wall towards an inlet niche opening,an impingement surface,a gas orifice, which is configured to direct a gas flow towards the impingement surface, anda taper surface, extending downstream of the impingement surface, such that a flow gap having, along the downstream direction, gradually increasing cross sectional area, is formed between the side wall and the taper surface.2. The gas inlet device as claimed in claim 1 , wherein the impingement surface is perpendicular±10 degrees claim 1 , preferably ±5 degrees claim 1 , to the gas flow directed by the gas orifice.3. The gas inlet device as claimed in claim 1 , wherein a gas orifice opening is flush with the back wall.4. The gas inlet device as claimed in claim 1 , wherein a gas orifice opening extends out of back wall towards the impingement surface.5. The gas inlet device as claimed in claim 1 , wherein the impingement surface presents a recess.6. The gas inlet device as claimed in claim 5 , wherein the gas orifice extends into the recess.712.-. (canceled)13. The gas inlet device as claimed in claim 1 , further comprising a throttling arrangement claim 1 , which is configured ...

EFFECTIVE AND NOVEL DESIGN FOR LOWER PARTICLE COUNT AND BETTER WAFER QUALITY BY DIFFUSING THE FLOW INSIDE THE CHAMBER

Embodiments described herein generally relate to a processing chamber having one or more gas inlet ports located at a bottom of the processing chamber. Gas flowing into the processing chamber via the one or more gas inlet ports is directed along a lower side wall of the processing chamber by a plate located over each of the one or more gas inlet ports or by an angled opening of each of the one or more gas inlet ports. The one or more gas inlet ports and the plates may be located at one end of the processing chamber, and the gas flow is directed towards an exhaust port located at the opposite end of the processing chamber by the plates or the angled openings. Thus, more gas can be flowed into the processing chamber without dislodging particles from a lid of the processing chamber. 1. A processing chamber , comprising:a bottom having an oval shape;a lower side wall disposed on the bottom;an upper side wall disposed on the lower side wall, the upper side wall having a circular shape;a lid disposed on the upper side wall;a process gas injection port disposed on the lid;one or more gas inlet ports located in the bottom adjacent to the lower side wall; andan exhaust enclosure coupled to the bottom.2. The processing chamber of claim 1 , wherein each gas inlet of the one or more gas inlets has a first cross-sectional area and each gas inlet port of the one or more gas inlet ports has a second cross-sectional area claim 1 , wherein the second cross-sectional area is larger than the first cross-sectional area.3. The processing chamber of claim 2 , wherein each gas inlet port of the one or more gas inlet ports is a slit-like opening that conforms to an azimuth of the lower side wall.4. The processing chamber of claim 3 , wherein the slit-like opening forms an angle of about zero degrees with the bottom.5. The processing chamber of claim 3 , wherein the slit-like opening forms an angle greater than zero degrees with the bottom.6. The processing chamber of claim 1 , further ...

DOGBONE INLET CONE PROFILE FOR REMOTE PLASMA OXIDATION CHAMBER

Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux. 1. A flow divider , comprising:an inlet end opposite an exit end;a contoured top comprising a first segment, a second segment, and a third segment, wherein the first segment is triangular shaped, the second segment is triangular shaped with a first curved edge, and the third segment is triangular shaped with a second curved edge; anda bottom.2. The flow divider of claim 1 , wherein the exit end has a curved face.3. The flow divider of claim 1 , wherein the flow divider varies in height.4. A processing chamber comprising the flow divider of claim 1 , further comprising:a chamber body, wherein the chamber body comprises a first side and a second side opposite the first side; a conduit expanding laterally from an inlet to an outlet of a flow member; and', 'the flow divider; and, 'a flow assembly disposed in the first side, wherein the flow assembly comprisesa distributed pumping structure adjacent to the second side.5. The processing chamber of claim 4 , wherein a first side of the flow divider has a first length claim 4 , the first side of the flow assembly has a second length claim 4 , and wherein the first length is between ¾ and ⅘ of the second length.6. The processing chamber of claim 4 , wherein a first side of the ...

Chemical control features in wafer process equipment

Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

DOGBONE INLET CONE PROFILE FOR REMOTE PLASMA OXIDATION CHAMBER

Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux. 1. A processing chamber , comprising:a chamber body, wherein the chamber body comprises a first side and a second side opposite the first side; an exit end having a face that is curved;', 'an inlet end opposite the exit end;', 'a contoured top; and', 'a bottom; and, 'a flow divider, wherein the flow divider comprises, 'a flow assembly disposed in the first side, wherein the flow assembly comprisesa distributed pumping structure adjacent to the second side.2. The processing chamber of claim 1 , wherein the contoured top comprises:a first segment;a second segment; anda third segment.3. The processing chamber of claim 2 , wherein the first segment is triangular shaped claim 2 , the second segment is triangular shaped with a first curved edge claim 2 , and the third segment is triangular shaped with a second curved edge.4. The processing chamber of claim 1 , wherein the flow divider varies in height.5. The processing chamber of claim 1 , wherein the first side of the flow divider has a first length claim 1 , the first side of the flow assembly has a second length claim 1 , and wherein the first length is between ¾ and ⅘ of the second length.6. The processing chamber of claim 1 , wherein the flow assembly comprises a recess.7. ...

GAS DISTRIBUTION APPARATUS FOR IMPROVED FILM UNIFORMITY IN AN EPITAXIAL SYSTEM

A gas distribution system is disclosed in order to obtain better film uniformity on a wafer. The better film uniformity may be achieved by utilizing an expansion plenum and a plurality of, for example, proportioning valves to ensure an equalized pressure or flow along each gas line disposed above the wafer. 1. A reaction system for processing a substrate , comprising:a reaction chamber, the reaction chamber holding a wafer to be processed;a gas source;an inlet gas feed line configured to receive a gas from the gas source;a pair of symmetrical feeds, the symmetrical feeds configured to split a flow of the gas from the inlet gas feed line;an expansion plenum with a plurality of outlet ports, wherein the expansion plenum receives gas from the pair of symmetrical feeds; anda plurality of valves configured to control flow of the gas from the plurality of outlet ports into the reaction chamber; andwherein the plurality of valves maintains a substantially equalized pressure across the plurality of outlet ports.2. The reaction system of claim 1 , wherein the plurality of valves comprise proportioning or metering valves.3. The reaction system of claim 2 , wherein the plurality of valves controls a flow rate of the gas to a lower gas feed line.4. The reaction system of claim 1 , wherein the plurality of valves are configured to create restrictions to counteract a cascading flow of gas across the expansion plenum.5. The reaction system of claim 1 , wherein the inlet gas feed line comprises at least one of: a gas line claim 1 , bends claim 1 , and fittings.6. The reaction system of claim 1 , further comprising an injection flange coupled to the plurality of outlet ports.7. The reaction system of claim 1 , wherein the expansion plenum is configured to receive the gas from opposite ends of the expansion plenum through the pair of symmetrical feeds.8. The reaction system of claim 1 , wherein the expansion plenum reduces a velocity of the gas when the gas fills the expansion plenum ...

Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium

A technology for forming a uniform film in a plane of a substrate involves a substrate processing apparatus including: a substrate support where a substrate is placed; a cover facing at least a portion of the substrate support, the cover including a gas supply channel at a center thereof; a gas supply structure connected to the gas supply channel; a reactive gas supply unit connected to the gas supply structure and including a plasma generating unit; a tube connected to the reactive gas supply unit and extending from the gas supply structure to the gas supply channel; and a gas supply unit connected to the gas supply structure and configured to supply a gas to a space between an outer surface of the tube and an inner surface of the gas supply structure.

MODULAR GAS INJECTION DEVICE

Embodiments of the device relate to a modular injector () for injecting a gas into a processing chamber (), comprising at least two adjacent injectors (), each injector comprising an inlet for receiving a gas wave or a gas flow, a flow shaping section () having left and right sidewalls that diverge according to a divergence angle relative to a propagation axis of the gas, for expanding the gas in a direction perpendicular to the propagation axis, and an outlet for expelling the gas. The modular injector forms an equivalent large injector having an equivalent large outlet which includes the outlets of the adjacent injectors and expands the gas over the equivalent large outlet. 1. A method for injecting a gas wave or a gas flow into a processing chamber , the method comprising:expanding the gas in a direction perpendicular to a propagation axis of the gas,then injecting the gas into the processing chamber,wherein the injecting the gas into the processing chamber uses a modular injector comprising at least two adjacent injectors, each injector comprising an inlet for receiving a gas, a flow-shaping section having left and right sidewalls which diverge according to a divergence angle relative to a propagation axis of the gas, for expanding the gas in a direction perpendicular to the propagation axis, and an outlet for expelling the gas, the modular injector forming an equivalent large injector having an equivalent large outlet including the outlets of the adjacent injectors and expanding the gas over the equivalent large outlet.2. The method according to claim 1 , wherein the modular injector comprises a connection area extending between adjacent sidewalls of the injectors claim 1 ,and comprising configuring each injector so that it expels the gas in a vicinity of the connection area with a greater flow rate than near a center of its outlet, to compensate for a lack of gas expulsion in the connection area.31090. The method according to claim 2 , comprising configuring ...

INTEGRATED CLUSTER TOOL FOR SELECTIVE AREA DEPOSITION

Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot. 1. A substrate processing method , comprising:transferring a substrate to a first process chamber and performing a surface modification process on the substrate in the first process chamber;transferring the substrate from the first process chamber to a second process chamber via a transfer chamber;performing a self-assembled monolayer treatment process on the substrate in the second process chamber;transferring the substrate from the second process chamber to a third process chamber via the transfer chamber;performing an atomic layer deposition process on the substrate in the third process chamber;transferring the substrate from the third process chamber to a fourth process chamber via the transfer chamber; andperforming an anneal process on the substrate in the fourth process chamber.2. The method of claim 1 , wherein the transfer chamber is maintained under vacuum during each of the substrate transfer processes.3. The method of claim 1 , wherein the anneal process is performed at a temperature greater than a vaporization temperature of a self-assembled monolayer material.4. The method of claim 1 , wherein the surface modification process is a pre-clean process.5. The method of claim 4 , wherein the pre-clean process modifies surface terminal groups on the substrate.6. The method of claim 1 , where the self-assembled ...

GAS DISTRIBUTION SHOWERHEAD FOR SEMICONDUCTOR PROCESSING

Embodiments disclosed herein generally relate to a gas distribution assembly for providing improved uniform distribution of processing gases into a semiconductor processing chamber. The gas distribution assembly includes a gas distribution plate, a blocker plate, and a dual zone showerhead. The gas distribution assembly provides for independent center to edge flow zonality, independent two precursor delivery, two precursor mixing via a mixing manifold, and recursive mass flow distribution in the gas distribution plate. 1. A gas distribution assembly , comprising: at least one gas supply inlet;', 'a plurality of channels forming a path splitting manifold operatively connected to the gas supply inlet; and', 'a first plurality of gas holes disposed within the plurality of channels and through the gas distribution plate;, 'a gas distribution plate, comprising an inner zone comprising a second plurality of gas holes;', 'an outer zone comprising a third plurality of gas holes; and', 'a first barrier wall separating the inner zone from the outer zone;, 'a blocker plate coupled to the gas distribution plate, comprising an inner zone comprising a fourth plurality of gas holes;', 'an outer zone comprising a fifth plurality of gas holes; and', 'a trench disposed between the inner zone and the outer zone, wherein the trench is configured to accept the first barrier wall such that the inner zone of the dual zone showerhead is physically separated from the outer zone of the dual zone showerhead; and, 'a dual zone showerhead coupled to the blocker plate, comprisingwherein the second plurality of gas holes and the fourth plurality of gas holes are patterned to avoid a co-axial flow, and wherein the third plurality of gas holes and the fifth plurality of gas holes are patterned to avoid a co-axial flow.2. The gas distribution assembly of claim 1 , wherein the inner zone of the dual zone showerhead is aligned with the inner zone of the blocker plate.3. The gas distribution assembly ...

GAS DISTRIBUTION SHOWERHEAD FOR SEMICONDUCTOR PROCESSING

Embodiments disclosed herein generally relate to a gas distribution assembly for providing improved uniform distribution of processing gases into a semiconductor processing chamber. The gas distribution assembly includes a gas distribution plate, a blocker plate, and a dual zone showerhead. The gas distribution assembly provides for independent center to edge flow zonality, independent two precursor delivery, two precursor mixing via a mixing manifold, and recursive mass flow distribution in the gas distribution plate. 1. A processing chamber comprising:a chamber body at least partially defining a processing volume within the chamber body;a substrate support disposed in the processing volume and coupled with the chamber body;an inlet adapter; a mixing manifold defining a plurality of mixing channels;', an inner zone defining a first plurality of gas holes;', 'an outer zone defining a second plurality of gas holes; and', 'a first barrier wall separating the inner zone from the outer zone;, 'a blocker plate comprising, an inner zone defining a third plurality of gas holes;', 'an outer zone defining a fourth plurality of gas holes; and', 'a trench disposed between the inner zone and the outer zone, wherein the trench is configured to accept the first barrier wall such that the inner zone of the dual zone showerhead is physically separated from the outer zone of the dual zone showerhead; and, 'a dual zone showerhead coupled with the blocker plate comprising, 'wherein the first plurality of gas holes and the third plurality of gas holes are patterned to avoid a co-axial flow, and wherein the second plurality of gas holes and the fourth plurality of gas holes are patterned to avoid a co-axial flow., 'a gas distribution assembly comprising2. The processing chamber of claim 1 , wherein the inner zone of the dual zone showerhead is aligned with the inner zone of the blocker plate.3. The processing chamber of claim 1 , wherein the outer zone of the dual zone showerhead is ...

FILM FORMATION APPARATUS, FILM FORMATION METHOD, AND STORAGE MEDIUM

Film formation apparatus includes: rotation mechanism to repeat alternately placing the substrate in first region and second region; raw material gas supply unit to supply the first region with gaseous raw material; processing space formation member to move up and down to form processing space isolated from the first region; atmosphere gas supply unit to supply atmosphere gas for forming ozone atmosphere where chain decomposition reaction is generated; energy supply unit to forcibly decompose the ozone by supplying energy to the ozone atmosphere and to obtain the oxide by oxidizing the raw material adsorbed to surface of the substrate; buffer region connected to the processing space and being supplied with inert gas; and partition unit to partition the buffer region off from the processing space when the atmosphere gas is supplied to the processing space and to have the buffer region communicate with the processing space when ozone is decomposed. 1. A film formation apparatus configured to obtain a thin film by stacking a molecule layer of oxide on a surface of a substrate loaded onto a table under a vacuum atmosphere formed within a vacuum chamber , the film formation apparatus comprising:a rotation mechanism configured to repeat alternately placing the substrate in a first region and a second region disposed in a circumference direction of the table over the table by rotating the table with respect to the first region and the second region;a raw material gas supply unit configured to supply the first region with a raw material in a gaseous state as a raw material gas so that the raw material is adsorbed to the substrate;a processing space formation member configured to move up and down with respect to the table in order to form a processing space near the substrate placed in the second region, the processing space being isolated from the first region;an atmosphere gas supply unit configured to supply an atmosphere gas for forming an ozone atmosphere including an ...

ATOMIC LAYER DEPOSITION CHAMBER WITH COUNTER-FLOW MULTI INJECT

A chamber lid assembly includes: a central channel having an upper portion and a lower portion and extending along a central axis; a housing at least partially defining a first and a second annular channel, each fluidly coupled to the central channel; a first plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the first annular channel and the central channel; a second plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the second annular channel and the central channel, wherein the first and the second plurality of apertures are angled differently with respect to the central axis so as to induce opposing rotational flow of gases about the central axis; and a tapered bottom surface extending from the lower portion of the central channel to a peripheral portion of the chamber lid assembly. 1. A chamber lid assembly comprising:a central channel having an upper portion and a lower portion and extending along a central axis;a housing having an inner region and at least partially defining a first annular channel and a second annular channel, wherein the first and second annular channels are fluidly coupled to the central channel;an insert disposed within the inner region of the housing;a first plurality of apertures disposed along a first horizontal plane through the insert to provide a multi-aperture inlet between the first annular channel and the central channel, wherein each aperture of the first plurality of apertures is angled with respect to the central axis so as to induce a rotational flow of a gas about the central axis in a first rotational direction;a second plurality of apertures disposed along a second horizontal plane through the insert to provide a multi-aperture inlet between the second annular channel and the central channel, wherein each aperture of the second plurality of apertures is angled with respect to the central ...

CHEMICAL CONTROL FEATURES IN WAFER PROCESS EQUIPMENT

Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates. 1. (canceled)2. A gas distribution assembly , comprising:an annular body characterized by an inner annular wall located at an inner diameter, an outer annular wall located at an outer diameter, an upper surface, and a lower surface;an upper plate coupled with the annular body along the upper surface, wherein the upper plate defines a plurality of first apertures;an intermediate plate coupled with the upper plate, wherein the intermediate plate defines a plurality of second apertures and a plurality of third apertures, and wherein the plurality of second apertures are axially aligned with the plurality of first apertures; anda lower plate coupled with the annular body and the intermediate plate, wherein the lower plate defines a plurality of fourth apertures, a plurality of fifth apertures, and a plurality of sixth apertures, wherein the plurality of fourth apertures are axially aligned with the plurality of first apertures and the plurality of second apertures, wherein the plurality of fifth apertures are axially aligned with the plurality of third apertures, and wherein the upper plate, the intermediate plate, and the lower plate are coupled with one another such that the plurality of first apertures, the plurality of second apertures, and the plurality of fourth apertures form a plurality of first fluid channels extending through the upper plate, the intermediate plate, and the lower plate.3. The gas distribution assembly of claim 2 , wherein the plurality of third apertures and the plurality of ...

Gas supply manifold and method of supplying gases to chamber using same

A gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas feeds including a first feed for feeding a first gas into the tubular gas manifold conduit and a second feed for feeding a second gas into the tubular gas manifold conduit. Each feed has two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, and the injection ports of each of the gas feeds are evenly distributed along a circumference of the tubular gas manifold conduit at the first axial position.

Gas distribution apparatus for improved film uniformity in an epitaxial system

A gas distribution system is disclosed in order to obtain better film uniformity on a wafer. The better film uniformity may be achieved by utilizing an expansion plenum and a plurality of, for example, proportioning valves to ensure an equalized pressure or flow along each gas line disposed above the wafer.

Integration of ALD tantalum nitride and alpha phase tantalum for copper electrode formation applications

Gas supply manifold and method for supplying gas to chamber using gas supply manifold

Gas supply manifold and method of supplying gases to chamber using same

웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템이, 웨이퍼 프로세싱 반응기의 가스 주입구 포트에 연결되도록 된 튜브형 가스 매니폴드 도관; 및 제 1 가스를 상기 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 제 1 공급부 및 제 2 가스를 상기 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 제 2 공급부를 포함한 가스 공급부들을 구비한다. 각각의 공급부는 튜브형 가스 매니폴드 도관의 제 1 축 방향 포지션에서 튜브형 가스 매니폴드 도관에 연결된 둘 이상의 주입 포트들을 가지고, 가스 공급부들 중 각각의 가스 공급부의 주입 포트들은 제 1 축 방향 포지션에서 튜브형 가스 매니폴드 도관을 따라 균일하게 분포된다. A gas inlet system for a wafer processing reactor comprising: a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas supplies including a first supply for supplying a first gas into the tubular gas manifold conduit and a second supply for supplying a second gas into the tubular gas manifold conduit. each supply having two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, the injection ports of each of the gas supplies having the tubular gas in the first axial position Evenly distributed along the manifold conduit.

Inverted positive vertical flow chemical vapor deposition reactor chamber

A chemical vapor deposition (CVD) reactor system comprising a substantially vertical reactor tube (14) having a gas inlet (22) and a gas outlet (28), a pedestal (40) mounted within the reactor tube (14) having means (46, 54, 56) for securing a substrate (50) thereto so that a surface of the substrate (50) is exposed downward, and means for providing a gas mixture (24) to the reactor tube (14), the gas mixture (24) being introduced into the reactor tube (14) via the gas inlet (22) and subsequently withdrawn via the gas outlet (28), the gas inlet (22) and outlet (24) being positioned, with respect to the substrate (50), below and above, respectively. The gas mixture (24) is maintained in substantially uniform plug flow as it is directed into close proximity to the exposed surface of the substrate (50). This permits the CVD growth of physically uniform layers, both in terms of thickness and composition, having low contamination concentrations over large substrate surface areas.

Inverted positive vertical flow chemical vapor deposition reactor chamber

A chemical vapor deposition (CVD) reactor system is described comprising a substantially vertical reactor tube having a gas inlet and a gas outlet, a pedestal mounted within the reactor tube having a structure for securing a substrate thereto so that a surface of the substrate is exposed downward, and apparatus for providing a gas mixture to the reactor tube, the gas mixture being introduced into the reactor tube via the gas inlet and subsequently withdrawn via the gas outlet, the gas inlet and outlet being positioned, with respect to the substrate, below and above, respectively. The gas mixture is maintained in substantially uniform plug flow as it is directed into close proximity to the exposed surface of the substrate. This permits the CVD growth of physically uniform layers, both in terms of thickness and composition, having low contamination concentrations over large substrate surface areas.

作为用于铜金属化的阻挡层的原子层沉积氮化钽和α相钽

本发明提供了一种用于在衬底上形成金属互连的方法。一方面，本方法包括沉积含难熔金属的阻挡层，所述阻挡层的厚度小于2nm使得其呈现类晶体结构，并足以抑制至少一部分金属层上的原子迁移；通过交替地引入一次或多次含金属化合物的脉冲和一次或多次含氮化合物的脉冲，在至少一部分阻挡层上沉积晶种层；并在至少一部分晶种层上沉积第二金属层来生成互连。

Effective and novel design for lower particle count and better wafer quality by diffusing the flow inside the chamber

본 명세서에 설명된 실시예들은 일반적으로 처리 챔버의 저부에 위치된 하나 이상의 가스 유입 포트를 갖는 처리 챔버에 관한 것이다. 하나 이상의 가스 유입 포트를 통해 처리 챔버 내로 유동하는 가스는 하나 이상의 가스 유입 포트 각각의 위에 위치된 플레이트에 의해, 또는 하나 이상의 가스 유입 포트 각각의 각진 개구에 의해, 처리 챔버의 하부 측벽을 따라 지향된다. 하나 이상의 가스 유입 포트 및 플레이트들은 처리 챔버의 한 단부에 위치될 수 있고, 가스 유동은 플레이트들 또는 각진 개구들에 의해 처리 챔버의 대향 단부에 위치된 배기 포트를 향해 지향된다. 따라서, 처리 챔버의 리드로부터 입자들을 이탈시키지 않고서 더 많은 가스가 처리 챔버 내로 유동될 수 있다. Embodiments described herein generally relate to a processing chamber having one or more gas inlet ports located at the bottom of the processing chamber. Gas flowing into the process chamber through the one or more gas inlet ports is directed along a lower sidewall of the process chamber by a plate positioned over each of the one or more gas inlet ports, or by an angled opening in each of the one or more gas inlet ports . One or more gas inlet ports and plates may be located at one end of the processing chamber, and gas flow is directed towards an exhaust port located at an opposite end of the processing chamber by the plates or angled openings. Accordingly, more gas can be flowed into the processing chamber without dislodging particles from the lid of the processing chamber.

Gas delivery apparatus for atomic layer deposition

원자층 증착과 같은, 순환적 층 증착 프로세스를 형성하기 위한 장치 및 방법이 제공된다. 하나의 양태에서, 장치는 기판 수용면을 가지는 기판 지지부, 및 챔버 리드를 포함하고, 챔버 리드는 챔버 리드의 중앙부로부터 연장하는 테이퍼진 통로와 통로로부터 챔버 리드의 주변부로 연장하는 바닥면을 포함하며, 바닥면은 기판 수용면을 거의 덮는 크기 및 형상을 가진다. 또한 장치는 점차적으로 확장하는 채널에 결합되는 하나 이상의 밸브, 및 각각의 밸브에 결합되는 하나 이상의 가스를 포함한다. An apparatus and method are provided for forming a cyclic layer deposition process, such as atomic layer deposition. In one aspect, the apparatus includes a substrate support having a substrate receiving surface, and a chamber lid, wherein the chamber lid includes a tapered passage extending from the center portion of the chamber lid and a bottom surface extending from the passage to the periphery of the chamber lid; The bottom surface has a size and shape that almost covers the substrate receiving surface. The apparatus also includes one or more valves coupled to gradually expanding channels, and one or more gases coupled to each valve.

Inverted vertical flow chemical vapor deposition reactor chamber

The chemical vapour deposition reactor for forming uniform epitaxial layers has a vertical reactor tube with cap which lower part of the tube is conical, terminating at a gas inlet. A lip projecting from the inner surface provides support for a pedestal, susceptor and substrate sub-assembly. The pedestal is cap-shaped with a recessed inner base portion forming an opening for the substrate, and the susceptor. Reactant gass enter the tube through the bottom inlet, becoming laminal and producing plug flow. Decomposed gases are thus directed onto the exposed surface of the substrate.

Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

본 발명은 부생성물의 발생을 억제하여 기판의 면내 균일성을 향상시킬 수 있는 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체를 제공한다. 기판을 처리하는 처리실; 상기 처리실 내에 적어도 프리커서가 되는 원료 가스, 상기 프리커서와 반응하는 반응 가스 및 퍼지 가스를 포함하는 처리 가스를 상기 기판의 중심부와 상기 기판의 주연부(周緣部) 각각에 독립적으로 공급하는 가스 공급공을 구비하는 가스 공급부; 상기 처리실 내를 배기하는 배기부; 및 상기 처리실 내에 상기 원료 가스를 공급하고, 상기 원료 가스를 공급 후에 상기 퍼지 가스를 공급하고, 상기 퍼지 가스를 공급 후에 상기 반응 가스를 상기 기판의 주연부에 공급하고, 상기 반응 가스를 상기 기판의 주연부에 공급한 후에 상기 반응 가스를 상기 기판의 중심부에 공급하고, 상기 반응 가스를 공급한 후에 상기 퍼지 가스를 공급하도록 상기 가스 공급부를 제어하는 제어부;를 포함한다. The present invention provides a substrate processing apparatus, a method of manufacturing a semiconductor device, and a recording medium capable of suppressing generation of by-products to improve in-plane uniformity of the substrate. A processing chamber for processing the substrate; A gas supply source for independently supplying a process gas including at least a precursor, a reaction gas reacting with the precursor, and a purge gas to the central portion of the substrate and the periphery of the substrate, A gas supply unit for supplying the gas; An exhaust unit for exhausting the inside of the process chamber; And supplying the purge gas after supplying the source gas, supplying the purge gas to the periphery of the substrate after supplying the purge gas, and supplying the reactive gas to the periphery of the substrate, And supplying the reactive gas to the central portion of the substrate, and controlling the gas supply unit to supply the purge gas after supplying the reactive gas.

Thin Film Encapsulation Processing System and Process Kit

본 개시내용은 박막 캡슐화(TFE)를 위한 방법들 및 장치에 관한 것이다. 일 실시예에서, 원자 층 증착(ALD) 챔버에서 사용하기 위한 프로세스 키트가 개시되며, 이는 유전체 윈도우, 밀폐 프레임, 및 밀폐 프레임과 연결된 마스크 프레임을 포함하고, 마스크 프레임은 내부에서 이 마스크 프레임의 대향 측면들 상에 형성된 가스 유입구 채널 및 가스 유출구 채널을 갖는다. The present disclosure relates to methods and apparatus for thin film encapsulation (TFE). In one embodiment, a process kit for use in an atomic layer deposition (ALD) chamber is disclosed, which includes a dielectric window, a seal frame, and a mask frame connected to the seal frame, the mask frame being internally opposite the mask frame. It has a gas inlet channel and a gas outlet channel formed on the sides.

Reaction system for growing a thin film

원자층증착(ALD) 박막증착장치는, 그 내부에 형성된 공간부 내에 배치된 웨이퍼 상에 박막을 증착하도록 구성된 증착 챔버를 포함한다. 상기 증착 챔버는 상기 공간부와 연결된 가스 입구를 포함한다. 가스 시스템은 상기 증착 챔버의 가스 입구로 가스를 이송하도록 구성된다. 상기 가스 시스템의 적어도 일부분은 상기 증착 챔버 위에 위치한다. 상기 가스 시스템은 복수의 가스 흐름들을 혼합하도록 구성된 혼합기를 포함한다. 이송 부재는 상기 혼합기 및 상기 가스 입구와 유체 연통된다. 상기 이송 부재는, 상기 가스가 상기 가스 입구로 들어오기 전에 상기 가스를 수평 방향으로 확산시키도록 구성된, 수평 방향으로 분기하는 한 쌍의 벽을 포함한다. An atomic layer deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer disposed in a space formed therein. The deposition chamber includes a gas inlet connected to the space portion. The gas system is configured to transfer gas to a gas inlet of the deposition chamber. At least a portion of the gas system is located above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas flows. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member includes a pair of horizontally diverging walls configured to diffuse the gas horizontally before the gas enters the gas inlet.

Atomic layer deposition with plasma source

Изобретение относится к реакторам осаждения с плазменным источником. Установка для плазменного атомно-слоевого осаждения содержит газовую линию от источника химически неактивного газа к расширительному устройству для подачи радикалов, открывающемуся в реакционную камеру, удаленный плазменный источник, систему управления потоком газа из источника химически неактивного газа через удаленный плазменный источник к расширительному устройству для подачи радикалов в течение всего периода плазменного атомно-слоевого осаждения, реактор плазменного атомно-слоевого осаждения, выполненный с возможностью осаждения материала в реакционной камере на по меньшей мере одну подложку посредством последовательных самонасыщающихся поверхностных реакций. Обеспечивается возможность атомно-слоевого осаждения на термочувствительные подложки при очень низких температурах. 6 з.п. ф-лы, 8 ил., 1 пр. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 584 841 C2 (51) МПК C23C 16/455 (2006.01) H01L 21/365 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ (21)(22) Заявка: ИЗОБРЕТЕНИЯ К ПАТЕНТУ 2013148923/02, 07.04.2011 (24) Дата начала отсчета срока действия патента: 07.04.2011 (43) Дата публикации заявки: 20.05.2015 Бюл. № 14 (73) Патентообладатель(и): ПИКОСАН ОЙ (FI) R U Приоритет(ы): (22) Дата подачи заявки: 07.04.2011 (72) Автор(ы): КИЛЬПИ, Вяйнё (FI), ЛИ, Вэй-Минь (FI), МАЛИНЕН, Тимо (FI), КОСТАМО, Юхана (FI), ЛИНДФОРС, Свен (FI) (45) Опубликовано: 20.05.2016 Бюл. № 14 (85) Дата начала рассмотрения заявки PCT на национальной фазе: 07.11.2013 (86) Заявка PCT: 2 5 8 4 8 4 1 (56) Список документов, цитированных в отчете о поиске: US 2005271812 A1, 08.12.2005. RU 2258764 C1, 20.08.2005. SU 810085 A, 28.02.1981. US 2005/0019494 A1, 27.01.2005. WO 2010024671 A1, 04.03.2010. WO 2009130375 A1, 29.10.2009. 2 5 8 4 8 4 1 R U (87) Публикация заявки PCT: C 2 C 2 FI 2011/050303 (07.04.2011) WO 2012/136876 (11.10.2012) Адрес для переписки: 197101, Санкт-Петербург, а/я 128, "АРСПАТЕНТ", С.В. ...

Atomic layer deposition with plasma source

본 발명은 순차적인 자기포화(self-saturating) 표면 반응들에 의해 상기 반응 챔버 내에서 상기 적어도 하나의 기판 상에 물질을 퇴적하도록 구성된 플라즈마 원자층 퇴적 반응기를 동작시키는 단계; 및 본질적으로 전체 퇴적 사이클 동안에, 비활성 가스 소오스로부터의 가스를 상기 반응 챔버를 향하여 개방된 넓어지는 래디컬 인피드 부분 속으로 흐르도록 허용하는 단계를 포함하는 방법에 관한 것이다. 또한, 본 발명은 대응하는 장치에 관한 것이다. The present invention operates a plasma atomic layer deposition reactor configured to deposit material on the at least one substrate in the reaction chamber by sequential self-saturating surface reactions; And essentially during the entire deposition cycle, allowing gas from an inert gas source to flow into the widening radical infeed portion open towards the reaction chamber. Further, the present invention relates to a corresponding device.

Gas supply for a processing furnace

The invention is related to a gas supply (30) for a processing furnace (6) with a plurality of gas inlets (32a-d) each opening into an inflow canal (34a-d) which opens into a furnace chamber (12) of the processing furnace (6). It is proposed that the plurality of gas inlets (32a-d) are furnished with different inlet cross sections and the plurality of inflow canals (34a-d) are furnished with different inflow cross sections opening into the furnace chamber (12).

Gas delivery apparatus and method for atomic layer deposition

One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the expanding channel to a peripheral portion of the covering member. One or more gas conduits are coupled to the expanding channel in which the one or more gas conduits are positioned at an angle from a center of the expanding channel. One embodiment of a chamber comprises a substrate support having a substrate receiving surface. The chamber further includes a chamber lid having a passageway at a central portion of the chamber lid and a tapered bottom surface extending from the passageway to a peripheral portion of the chamber lid. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. In one aspect, the bottom surface of the chamber lid may be tapered. In another aspect, a reaction zone defined between the chamber lid and the substrate receiving surface may comprise a small volume. In still another aspect, the passageway may comprise a tapered expanding channel extending from the central portion of the chamber lid. Another embodiment of the chamber comprises a substrate support having a substrate receiving surface. The chamber further comprises a chamber lid having an expanding channel extending from a central portion of the chamber lid and having a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid. One or more gas conduits are disposed around an upper portion of the expanding channel in which the one or more gas conduits are disposed at an angle from a center of the expanding channel. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

Gas delivery apparatus for atomic layer deposition

An apparatus and method for performing a cyclical layer deposition process, such as atomic layer deposition is provided. In one aspect, the apparatus includes a substrate support having a substrate receiving surface, and a chamber lid comprising a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The apparatus also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve.

Apparatus and method for hybrid chemical processing

A method and apparatus for performing multiple deposition processes is provided. In one embodiment, the apparatus includes a chamber body and a gas distribution assembly disposed on the chamber body. In one embodiment, the method comprises positioning a substrate surface to be processed within a chamber body, delivering two or more compounds into the chamber body utilizing a gas distribution assembly disposed on the chamber body to deposit a film comprising a first material, and then delivering two or more compounds into the chamber body utilizing a gas distribution assembly disposed on the chamber body to deposit a film comprising a second material. In one aspect of these embodiments, the gas distribution assembly includes a gas conduit in fluid communication with the chamber body, two or more isolated gas inlets equipped with one or more high speed actuating valves in fluid communication with the gas conduit, and a mixing channel in fluid communication with the gas conduit. The valves are adapted to alternately pulse one or more compounds into the gas conduit, and the mixing channel is adapted to deliver a continuous flow of one or more compounds into the gas conduit.

Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system

The embodiments of the invention describe a process chamber, such as an ALD chamber, that has gas delivery conduits with gradually increasing diameters to reduce Joule-Thompson effect during gas delivery, a ring-shaped gas liner leveled with the substrate support to sustain gas temperature and to reduce gas flow to the substrate support backside, and a gas reservoir to allow controlled delivery of process gas. The gas conduits with gradually increasing diameters, the ring-shaped gas liner, and the gas reservoir help keep the gas temperature stable and reduce the creation of particles.

Integration of ALD tantalum nitride for copper metallization

A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.

Apparatus for cyclical depositing of thin films

An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.

Gas distribution showerhead for semiconductor processing

Embodiments disclosed herein generally relate to a gas distribution assembly for providing improved uniform distribution of processing gases into a semiconductor processing chamber. The gas distribution assembly includes a gas distribution plate, a blocker plate, and a dual zone showerhead. The gas distribution assembly provides for independent center to edge flow zonality, independent two precursor delivery, two precursor mixing via a mixing manifold, and recursive mass flow distribution in the gas distribution plate.

Gas delivery apparatus for atomic layer deposition

Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel, The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

Gas delivery apparatus and method for atomic layer deposition

Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

Gas delivery apparatus and method for atomic layer deposition

Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

Gas delivery apparatus for atomic layer deposition

An apparatus and method for performing a cyclical layer deposition process, such as atomic layer deposition is provided. In one aspect, the apparatus includes a substrate support having a substrate receiving surface, and a chamber lid comprising a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The apparatus also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve.

Gas delivery apparatus and method for atomic layer deposition

One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the expanding channel to a peripheral portion of the covering member. One or more gas conduits are coupled to the expanding channel in which the one or more gas conduits are positioned at an angle from a center of the expanding channel. One embodiment of a chamber comprises a substrate support having a substrate receiving surface. The chamber further includes a chamber lid having a passageway at a central portion of the chamber lid and a tapered bottom surface extending from the passageway to a peripheral portion of the chamber lid. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. In one aspect, the bottom surface of the chamber lid may be tapered. In another aspect, a reaction zone defined between the chamber lid and the substrate receiving surface may comprise a small volume. In still another aspect, the passageway may comprise a tapered expanding channel extending from the central portion of the chamber lid. Another embodiment of the chamber comprises a substrate support having a substrate receiving surface. The chamber further comprises a chamber lid having an expanding channel extending from a central portion of the chamber lid and having a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid. One or more gas conduits are disposed around an upper portion of the expanding channel in which the one or more gas conduits are disposed at an angle from a center of the expanding channel. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

Integration of ALD tantalum nitride and alpha-phase tantalum for copper metallization application

A method for forming a metal interconnect on a substrate is provided. In one aspect, the method comprises depositing a refractory metal containing barrier layer having a thickness that exhibits a crystalline like structure and is sufficient to inhibit atomic migration on at least a portion of a metal layer by alternately introducing one or more pulses of a metal-containing compound and one or more pulses of a nitrogen-containing compound; depositing a seed layer on at least a portion of the barrier layer; and depositing a second metal layer on at least a portion of the seed layer.

Apparatus for cyclical depositing of thin films

An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.

Apparatus for cyclical depositing of thin films

An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.

Apparatus and method for hybrid chemical processing

In one embodiment, an apparatus for performing an atomic layer deposition process is provided which includes a chamber body having a substrate support, a lid assembly attached to the chamber body, and delivery sub-assemblies coupled to the lid assembly and configured to deliver process gases into a centralized expanding conduit, which extends through the lid assembly and expands radially outward. The first gas delivery sub-assembly contains an annular mixing channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular mixing channel is adapted to deliver a first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. A first gas inlet may be coupled to the annular mixing channel and positioned to provide the first process gas to the annular mixing channel. The second gas delivery sub-assembly contains a second gas inlet in fluid communication to the centralized expanding conduit.

Apparatuses for atomic layer deposition

Embodiments of the invention provide apparatuses and methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one embodiment, a chamber contains a substrate support with a receiving surface and a chamber lid containing an expanding channel formed within a thermally insulating material. The chamber further includes at least one conduit coupled to a gas inlet within the expanding channel and positioned to provide a gas flow through the expanding channel in a circular direction, such as a vortex, a helix, a spiral or derivatives thereof. The expanding channel may be formed directly within the chamber lid or formed within a funnel liner attached thereon. The chamber may contain a retaining ring, an upper process liner, a lower process liner or a slip valve liner. Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic. In an alternative embodiment, a deposition system contains a catalytic water vapor generator connected to an ALD chamber.

Methods for atomic layer deposition of hafnium-containing high-K dielectric materials

Embodiments of the invention provide methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one embodiment, a chamber contains a substrate support with a receiving surface and a chamber lid containing an expanding channel formed within a thermally insulating material. The chamber further includes at least one conduit coupled to a gas inlet within the expanding channel and positioned to provide a gas flow through the expanding channel in a circular direction, such as a vortex, a helix, a spiral, or derivatives thereof. The expanding channel may be formed directly within the chamber lid or formed within a funnel liner attached thereon. The chamber may contain a retaining ring, an upper process liner, a lower process liner or a slip valve liner. Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic. In an alternative embodiment, a deposition system contains a catalytic water vapor generator connected to an ALD chamber.

Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system

The embodiments of the invention describe a process chamber, such as an ALD chamber, that has gas delivery conduits with gradually increasing diameters to reduce Joule-Thompson effect during gas delivery, a ring-shaped gas liner leveled with the substrate support to sustain gas temperature and to reduce gas flow to the substrate support backside, and a gas reservoir to allow controlled delivery of process gas. The gas conduits with gradually increasing diameters, the ring-shaped gas liner, and the gas reservoir help keep the gas temperature stable and reduce the creation of particles.

Methods for atomic layer deposition of hafnium-containing high-k dielectric materials

Embodiments of the invention provide methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one embodiment, a chamber contains a substrate support with a receiving surface and a chamber lid containing an expanding channel formed within a thermally insulating material. The chamber further includes at least one conduit coupled to a gas inlet within the expanding channel and positioned to provide a gas flow through the expanding channel in a circular direction, such as a vortex, a helix, a spiral, or derivatives thereof. The expanding channel may be formed directly within the chamber lid or formed within a funnel liner attached thereon. The chamber may contain a retaining ring, an upper process liner, a lower process liner or a slip valve liner. Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic. In an alternative embodiment, a deposition system contains a catalytic water vapor generator connected to an ALD chamber.

Apparatuses and methods for atomic layer deposition of hafnium-containing high-k dielectric materials

Embodiments of the invention provide methods for depositing dielectric materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one example, a method includes sequentially exposing a substrate to a hafnium precursor and an oxidizing gas to deposit a hafnium oxide material thereon. In another example, a hafnium silicate material is deposited by sequentially exposing a substrate to the oxidizing gas and a process gas containing a hafnium precursor and a silicon precursor. The oxidizing gas usually contains water vapor formed by flowing a hydrogen source gas and an oxygen source gas through a water vapor generator. In another example, a method includes sequentially exposing a substrate to the oxidizing gas and at least one precursor to deposit hafnium oxide, zirconium oxide, lanthanum oxide, tantalum oxide, titanium oxide, aluminum oxide, silicon oxide, aluminates thereof, silicates thereof, derivatives thereof or combinations thereof.

Gas distribution showerhead for semiconductor processing

Embodiments disclosed herein generally relate to a gas distribution assembly for providing improved uniform distribution of processing gases into a semiconductor processing chamber. The gas distribution assembly includes a gas distribution plate, a blocker plate, and a dual zone showerhead. The gas distribution assembly provides for independent center to edge flow zonality, independent two precursor delivery, two precursor mixing via a mixing manifold, and recursive mass flow distribution in the gas distribution plate.

Gas distribution showerhead for semiconductor processing

Embodiments disclosed herein generally relate to a gas distribution assembly for providing improved uniform distribution of processing gases into a semiconductor processing chamber. The gas distribution assembly includes a gas distribution plate, a blocker plate, and a dual zone showerhead. The gas distribution assembly provides for independent center to edge flow zonality, independent two precursor delivery, two precursor mixing via a mixing manifold, and recursive mass flow distribution in the gas distribution plate.

Chemical vapor deposition apparatus

Provided is a chemical vapor deposition apparatus. The apparatus includes a reaction chamber, a gas introduction unit, and a gas exhaust unit. The reaction chamber includes a susceptor on which a wafer is loaded and a reaction furnace in which the wafer is processed by chemical vapor deposition. The gas introduction unit is disposed at an outer wall of the reaction chamber to supply reaction gas from an outside of the reaction furnace to a center portion of the reaction furnace. The gas exhaust unit is disposed at a center portion of the reaction chamber to discharge the reaction gas to an upper or lower outside of the reaction chamber after the reaction gas is used for a reaction in the reaction furnace. Therefore, the gas density inside the chamber can be kept at a substantially uniform state even when process pressure is increased for growing a high-temperature deposition layer.

Carbon/carbon composite material production system and method

本发明公开了一种碳/碳复合材料生产系统及方法，包括炉体，所述炉体从上至下内径逐渐增大，所述炉体的底部开设有上料口，所述上料口处设与炉体可拆卸连接的密封炉盖，所述炉体的内侧表面和密封炉盖的内侧表面均覆盖有隔热层，所述密封炉盖的顶部中心外设有旋转座，所述密封炉盖的底部中心设有驱动旋转座转动的驱动组件，所述旋转座的顶部中心设有用于支撑坯体的罩体，所述罩体的内侧表面由外至内依次覆盖有石英层和隔热层，所述罩体内的石英层和隔热层之间设有加热层，所述密封炉盖的底部还设有用于升降密封炉盖的升降组件，所述炉体的侧壁顶部开设有进气口，所述炉体的侧壁底顶部开设有出气口。

Vortex chamber lids for ald

本发明的实施方式是关于在原子层沉积工艺期间沉积材料至衬底上的设备和方法。在一实施方式中，提供用于处理衬底的处理室，其包括含有置中设置的气体分配道的室盖组件，其中气体分配道的汇流部往气体分配道的中心轴逐渐变细，气体分配道的分流部则背离中心轴逐渐变细。室盖组件还包含从气体分配道的分流部延伸至室盖组件的周围部分的锥形底面，其中锥形底面经构形及调整大小以基本上覆盖住衬底，且二导管耦接至气体分配道的汇流部的气体入口并设置以提供遍及气体分配道的环形气流。

Patent JPH043254B2

Gas distribution showerhead for semiconductor processing

본 명세서에 개시된 실시예들은 일반적으로 반도체 처리 챔버 내로 처리 가스들의 개선된 균일한 분배를 제공하기 위한 가스 분배 어셈블리에 관한 것이다. 가스 분배 어셈블리는 가스 분배 플레이트, 차단 플레이트, 및 이중 구역 샤워헤드를 포함한다. 가스 분배 어셈블리는 독립적인 중심 대 에지 유동 구역성, 독립적인 2 프리커서 전달, 혼합 매니폴드를 통한 2 프리커서 혼합, 및 가스 분배 플레이트 내에서의 순환적 질량 흐름 분배를 제공한다. Embodiments disclosed herein generally relate to a gas distribution assembly for providing improved uniform distribution of process gases into a semiconductor processing chamber. The gas distribution assembly includes a gas distribution plate, a shutoff plate, and a dual zone showerhead. The gas distribution assembly provides independent center-to-edge flow zones, independent 2 precursor delivery, 2 precursor mixing through the mixing manifold, and cyclic mass flow distribution within the gas distribution plate.

CHEMICAL VAPOR DEPOSITION APPARATUS FOR FORMING THIN FILM

L'invention concerne un dispositif formant un film mince qui est configuré pour éjecter une matière gazeuse contre un substrat supporté dans une chambre de réaction afin de former un film mince sur le substrat. Selon l'invention, une douche de gaz de contrôle 6 est disposée pour entourer la douche 2 de matière gazeuse afin d'éjecter un écoulement de gaz de contrôle pour configurer l'écoulement de la matière gazeuse sous la forme d'un faisceau, laquelle se dirige vers un substrat 3. L'invention s'applique notamment à la formation de couches minces en électronique. Disclosed is a thin film device which is configured to eject a gaseous material against a substrate supported in a reaction chamber to form a thin film on the substrate. According to the invention, a control gas shower 6 is arranged to surround the shower 2 of gaseous material in order to eject a flow of control gas to configure the flow of the gaseous material in the form of a bundle, which is directed towards a substrate 3. The invention applies in particular to the formation of thin films in electronics.

METHOD FOR ADJUSTING THE DENSITY OF FINE PARTICLES

METHOD FOR ADJUSTING THE SPEED OF FINE PARTICLES

L'INVENTION CONCERNE UN PROCEDE DE REGLAGE DE LA VITESSE DE PARTICULES FINES AU MOYEN D'UNE TUYERE. IL CONSISTE A PLACER UNE TUYERE CONVERGENTE-DIVERGENTE 1 DANS LE TRAJET D'ECOULEMENT DES PARTICULES FINES ENTRE UNE CHAMBRE AMONT 3 ET UNE CHAMBRE AVAL 4 DANS CHACUNE DESQUELLES UN VIDE EST ETABLI AU MOYEN D'UNE POMPE 5, ET A DONNER AU RAPPORT PP D'UNE PRESSION P REGNANT D'UN COTE AVAL A UNE PRESSION P D'UN COTE AMONT, UNE VALEUR EGALE OU INFERIEURE A UN RAPPORT CRITIQUE DE PRESSION. DOMAINE D'APPLICATION : PROJECTION DE PARTICULES FINES ET ULTRA-FINES POUR FORMER DES PELLICULES, DES FILMS, DES MATERIAUX COMPOSITES, POUR REALISER UN DOPAGE, ETC. THE INVENTION RELATES TO A METHOD FOR ADJUSTING THE SPEED OF FINE PARTICLES BY MEANS OF A TUBE. IT CONSISTS OF PLACING A CONVERGENT-DIVERGENT PIPE 1 IN THE FLOW PATH OF THE FINE PARTICLES BETWEEN AN UPSTREAM CHAMBER 3 AND A DOWNSTREAM CHAMBER 4 IN EACH OF WHICH A VACUUM IS ESTABLISHED BY MEANS OF A PUMP 5, AND GIVE THE PP REPORT FROM A PRESSURE P GOING FROM A DOWNSTREAM SIDE TO A PRESSURE P FROM AN UPPER SIDE, A VALUE AT OR LESS THAN A CRITICAL PRESSURE RATIO. FIELD OF APPLICATION: PROJECTION OF FINE AND ULTRA-FINE PARTICLES TO FORM FILMS, FILMS, COMPOSITE MATERIALS, TO MAKE DOPING, ETC.

Gas distribution showerhead for semiconductor processing

于此所公开的实施例通常关于用于提供处理气体到半导体处理腔室中的改进的均匀分配的气体分配组件。气体分配组件包括气体分配板、区隔板和双区喷头。气体分配组件提供独立的中心到边缘的流动地带性、独立的两种前驱物输送、经由混合歧管的两种前驱物混合及气体分配板中的递归质量流量分配。

Effective and novel design for lower particle count and better wafer quality by diffusing the flow inside the chamber

於此所述的實施例通常關於一種處理腔室，具有一或多個氣體入口埠位於處理腔室的底部處。經由一或多個氣體入口埠進入處理腔室的氣體藉由位於一或多個氣體入口埠的每一個之上的板或藉由一或多個氣體入口埠的每一個的成角度的開口而沿著處理腔室的下側壁引導。一或多個氣體入口埠和板可位於處理腔室的一端，且氣流藉由板或成角度的開口而指向位於處理腔室的相對端處的排氣埠。因此，更多的氣體可流入處理腔室而不會從處理腔室的蓋子上逐出顆粒。

Gas supply device

본 발명은, 처리 용기 내의 적재대에 적재되는 기판에 대향하도록 배치되어, 상기 기판에 대하여 처리하기 위한 처리 가스를 공급하는 가스 공급 장치에 있어서, 상기 적재대 상의 기판과 대향하는 위치에 가스의 확산 공간을 구성하기 위해, 상기 적재대를 향해 끝이 넓어지는 형상으로 형성된 오목부를 갖는 천판 부재와, 상기 오목부의 정점부로부터 그 오목부 내에 돌출되고, 상기 오목부의 둘레 방향을 따라 복수의 가스 공급 구멍을 갖는 가스 공급 노즐을 포함하는 것을 특징으로 하는 가스 공급 장치이다. In the gas supply apparatus which is arrange | positioned so as to oppose the board | substrate mounted on the mounting board in a process container, and supplies the process gas for processing with respect to the said board | substrate, the gas spreads in the position which opposes the board | substrate on the said mounting board. In order to form a space, a top plate member having a concave portion formed in a shape in which the end is widened toward the mounting table, and protrudes from the apex portion of the concave portion into the concave portion, and a plurality of gas supply holes along the circumferential direction of the concave portion. It is a gas supply apparatus characterized by including the gas supply nozzle which has.

Carbon/carbon composite material production system and method

本发明公开了一种碳/碳复合材料生产系统及方法，包括炉体，所述炉体从上至下内径逐渐增大，所述炉体的底部开设有上料口，所述上料口处设与炉体可拆卸连接的密封炉盖，所述炉体的内侧表面和密封炉盖的内侧表面均覆盖有隔热层，所述密封炉盖的顶部中心外设有旋转座，所述密封炉盖的底部中心设有驱动旋转座转动的驱动组件，所述旋转座的顶部中心设有用于支撑坯体的罩体，所述罩体的内侧表面由外至内依次覆盖有石英层和隔热层，所述罩体内的石英层和隔热层之间设有加热层，所述密封炉盖的底部还设有用于升降密封炉盖的升降组件，所述炉体的侧壁顶部开设有进气口，所述炉体的侧壁底顶部开设有出气口。

Gas delivery apparatus and method for atomic layer deposition

One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the expanding channel to a peripheral portion of the covering member. One or more gas conduits are coupled to the expanding channel in which the one or more gas conduits are positioned at an angle from a center of the expanding channel. One embodiment of a chamber comprises a substrate support having a substrate receiving surface. The chamber further includes a chamber lid having a passageway at a central portion of the chamber lid and a tapered bottom surface extending from the passageway to a peripheral portion of the chamber lid. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. In one aspect, the bottom surface of the chamber lid may be tapered. In another aspect, a reaction zone defined between the chamber lid and the substrate receiving surface may comprise a small volume. In still another aspect, the passageway may comprise a tapered expanding channel extending from the central portion of the chamber lid. Another embodiment of the chamber comprises a substrate support having a substrate receiving surface. The chamber further comprises a chamber lid having an expanding channel extending from a central portion of the chamber lid and having a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid. One or more gas conduits are disposed around an upper portion of the expanding channel in which the one or more gas conduits are disposed at an angle from a center of the expanding channel. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

Processes for depositing metal compound coatings

A metal compound having a metal radical containing one or more metals, and a radical containing hydrogen and one or more of the elements C, N, O and B is thermally decomposed in the presence of a substrate to form a coating of a metal oxide, nitride carbide or boride on the substrate. In one embodiment of the invention, the metal compound is entrained in a supersonic molecular beam which, upon impact with the surface to be coated, thermally decomposes, forming a refractory metal coating and gaseous by-products.

Gas supply device

本发明是一种气体供给装置，其与在处理容器内的载置台上载置的基板对置地配置，供给对上述基板进行处理的处理气体。包括：在与上述载置台上的基板对置的位置，为了构成气体扩散空间而具有形成朝向上述载置台逐渐扩展的形状的凹部的顶板部件；从上述凹部的顶部向该凹部内突出，并具有多个沿着该凹部的周向的气体供给孔的气体供给喷嘴。

Plasma processing apparatus

A plasma processing apparatus includes a plasma generation chamber in which plasma active species are generated, a process chamber configured to accommodate processing target objects stacked in a vertical direction, the plasma active species generated in the plasma generation chamber being supplied into the process chamber, a plasma source gas supply pipe disposed inside the plasma generation chamber and extending in the vertical direction, a plasma source gas being introduced from one end of the plasma source gas supply pipe and discharged through gas discharge holes formed in the plasma source gas supply pipe in the vertical direction, and a pair of plasma electrodes, arranged to face each other, configured to apply an electric field to the plasma source gas discharged into the plasma generation chamber. A size of a discharge area interposed between the pair of plasma electrodes is varied in the vertical direction.

Inverted positive vertical flow chemical vapor deposition chamber

ABSTRACT OF THE DISCLOSURE A chemical vapor deposition (CVD) reactor system is described comprising a substantially vertical reactor tube (14) having a gas inlet (22) and a gas outlet (28), a pedestal (40) mounted within the reactor tube (14) having means (46, 54, 56) for securing a substrate (50) thereto so that a surface of the substrate (50) is ex-posed downward, and means for providing a gas mixture (24) to the rector tube (14), the gas mixture (24) being introduced into the reactor tube (14) via the gas inlet (22) and subsequently withdrawn via the gas outlet (28), the gas inlet (22) and outlet (24) being positioned, with respect to the substrate (50), below and above, respectively. The gas mixture (24) is maintained in substantially uniform plug flow as it is directed into close proximity to the exposed surface of the substrate (50). This permits the CVD growth of physically uniform layers, both in terms of thickness and composition, having low contamination concentrations over large substrate surface areas.

Method of feeding gases into a reactor to grow epitaxial structures based on group iii nitride metals and a device for carrying out said method

The invention relates to methods for the chemical application of coatings by the decay of gaseous compounds, in particular to methods for injecting gases into a reaction chamber. The invention also relates to means for feeding gases into a reaction chamber, said means providing for the regulation of streams of reactive gases, and ensures the possibility of obtaining multi-layer epitaxial structures having set parameters and based on nitrides of group III metals while simultaneously increasing the productivity and cost-effectiveness of the process of the epitaxial growth thereof. Before being fed into a reactor, all of the gas streams are sent to a mixing chamber connected to the reactor, and are then fed into the reactor via a flux former under laminar flow conditions. The mixing chamber and the flux former are equipped with means for maintaining a set temperature. As a result of these solutions, a gaseous mixture with set parameters is fed into the reactor, and the formation of vortices is simultaneously prevented. The maximum allowable volume of the mixing chamber is chosen to take into account the process parameters and the required rarity of heterojunctions.

Apparatus and method for loading a film cassette for gaseous vapor deposition

The present invention is an apparatus and method for loading a film cassette for gaseous vapor deposition. The invention comprises careful alignment of a film cassette and a supply roll such that film can be transferred from the supply roll to the cassette while minimizing touching, ceasing or cracking the film.

Modular injector to inject gas in treatment chamber, comprises injectors including inlet to receive gas wave, curved section to dilate gas in direction perpendicular to propagation axis of gas and outlet to eject gas, and connection zone

The modular injector (11) comprises injectors including an inlet for receiving a gas wave or a gas pulse, a curved section (20) for dilating the gas in a direction perpendicular to a propagation axis of the gas and an outlet for ejecting the gas, and a connection zone. The section includes first and second walls (23), which diverge according to an angle of divergence with respect to the gas propagation axis. The connection zone extends between walls, and includes a unit for ejecting the gas in the vicinity of the connection zone. The modular injector (11) comprises injectors including an inlet for receiving a gas wave or a gas pulse, a curved section (20) for dilating the gas in a direction perpendicular to a propagation axis of the gas and an outlet for ejecting the gas, and a connection zone. The section includes first and second walls (23), which diverge according to an angle of divergence with respect to the gas propagation axis. The connection zone extends between walls, and includes a unit for ejecting the gas in the vicinity of the connection zone at a rate greater than the ejection of gas near the center of the outlet to compensate the lack of gas ejected in the connection zone. The gas ejected by the outlet has a velocity profile with a variation of less than 90%. The injectors further include a diffusion plate including openings for the passage of gas, a constriction region, a first dilation region (25) in which the walls diverge according to a first angle of divergence, and a second dilation region (26) in which the walls diverge according to a second angle of divergence, which is lower than the first divergence angle. A height of the section varies according to an axis perpendicular to the propagation axis. The constriction region has a first height close to the center of the section and a second height close to the wall. The first height is lower than the second height so as to slow down the velocity of the gas close to the center of the section and the ...

Atomic layer deposition with plasma source

The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber (335) on at least one substrate (360) by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.

Apparatus and method for atomic layer deposition of hafnium-containing high dielectric constant dielectric materials

PROCESS AND APPLIANCE FOR COATING A SUBSTRATE

Apparatus and method for hybrid chemical processing

In one embodiment, an apparatus for performing an atomic layer deposition (ALD) process is provided which includes a chamber body containing a substrate support, a lid assembly attached to the chamber body, a remote plasma system (RPS) in fluid communication with the reaction zone, a centralized expanding conduit extending through the lid assembly and expanding radially outwards, a first gas delivery sub-assembly configured to deliver a first process gas, and a second gas delivery sub-assembly configured to deliver a second process gas into the centralized expanding conduit. The first gas delivery sub-assembly contains an annular channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular channel is adapted to deliver the first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. The second gas delivery sub-assembly contains a gas inlet in fluid communication to the centralized expanding conduit.

Device for introducing gases into the chamber of an epitaxy reactor, reactor chamber including such a gas-introduction device, and use of such a chamber for producing semiconducting layers

Device for introducing gases into the chamber of an epitaxy reactor in the vapour phase, which includes at least one sample-carrier (14), this device comprising one or more gas introduction channels opening out into the reactor through orifices. The orifices are slots (1a, 1b) arranged in such a way as to allow gases to be introduced in the form of laminar flows parallel to the sample-carrier (14). In one illustrative embodiment, the device includes several independent slots, which are parallel and superimposed, arranged at a slight distance from one another in a plane perpendicular to that of the sample and of the direction of the gaseous flow. In another example, the device includes only one slot. The use of the device allows for the introduction through each slot of either a single gas, or of several gases which do not react together. Application: production of semiconducting layers by MOVPE.

High accuracy vapor generation and delivery for thin film deposition

Integrated cluster tool for selective area deposition

본원에서 설명되는 실시예들은, 기판을 프로세싱하기 위한 장치 및 방법들에 관한 것이다. 일 실시예에서, 이송 챔버 및 사전-세정 챔버, SAM(self-assembled monolayer) 증착 챔버, ALD(atomic layer deposition) 챔버, 및 이송 챔버 주위에 배치된 사후-프로세싱 챔버를 갖는 클러스터 툴 장치가 제공된다. 기판은 클러스터 툴에 의해 프로세싱될 수 있고, 사전-세정 챔버, SAM 증착 챔버, ALD 챔버, 그리고 사후-프로세싱 챔버 사이에서 이송될 수 있다. 챔버들 각각 사이에서의 기판의 이송은, 이송 로봇을 하우징하는 이송 챔버에 의해 용이해질 수 있다. Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. . The substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by a transfer chamber housing the transfer robot.

Thin film encapsulation processing system and process kit

The present disclosure relates to methods and apparatus for a thin film encapsulation (TFE). In one embodiment a process kit for use in an atomic layer deposition (ALD) chamber is disclosed and includes a dielectric window, a sealing frame, and a mask frame connected with the sealing frame, wherein the mask frame has a gas inlet channel and a gas outlet channel formed therein on opposing sides thereof.