Methods for atomic layer deposition of hafnium-containing high-K dielectric materials

09-10-2012 дата публикации

Номер:

US8282992B2

Автор: Craig R. Metzner, Kenric Cho, Nyi Oo Myo, Paul Deaten, Pravin Narwankar, Shreyas Kher, Steve Poppe

Принадлежит: Applied Materials Inc

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

C C2 C23 C23C C23C1 C23C16 C23C16/C23C16/0 C23C16/00 C23C16/02 C23C16/027 C23C16/0272 C23C16/4 C23C16/40 C23C16/401 C23C16/405 C23C16/44 C23C16/441 C23C16/4412 C23C16/448 C23C16/4488 C23C16/45 C23C16/455 C23C16/4552 C23C16/45529 C23C16/4553 C23C16/45531 C23C16/4554 C23C16/45544 C23C16/4558 C23C16/45582 C23C16/5 C23C16/56 Y Y0 Y02 Y02T Y02T5 Y02T50 Y02T50/Y02T50/6 Y02T50/60 Y1 Y10 Y10T Y10T1 Y10T13 Y10T137 Y10T137/Y10T137/0 Y10T137/03 Y10T137/035 Y10T137/0357 Y10T137/039 Y10T137/0396 Y10T137/2 Y10T137/20 Y10T137/208 Y10T137/2087

IPC - классификация

C C2 C23 C23C C23C1 C23C16 C23C16/C23C16/0 C23C16/02 C23C16/027 C23C16/0272 C23C16/1 C23C16/10 C23C16/5 C23C16/56

Получить PDF