СПОСОБ И УСТАНОВКА ДЛЯ ЭПИТАКСИАЛЬНОГО ВЫРАЩИВАНИЯ ПОЛУПРОВОДНИКОВ ТИПА III-V, УСТРОЙСТВО ГЕНЕРАЦИИ НИЗКОТЕМПЕРАТУРНОЙ ПЛАЗМЫ ВЫСОКОЙ ПЛОТНОСТИ, ЭПИТАКСИАЛЬНЫЙ СЛОЙ НИТРИДА МЕТАЛЛА, ЭПИТАКСИАЛЬНАЯ ГЕТЕРОСТРУКТУРА НИТРИДА МЕТАЛЛА И ПОЛУПРОВОДНИК

Изобретение относится к установкам и способам эпитаксиального выращивания монокристаллов осаждением из паровой или газовой фазы. Сущность изобретения: вакуумная установка для эпитаксиального выращивания полупроводников типа III-V содержит вакуумную камеру, в которой поддерживается давление от приблизительно 10-3 мбар до 1 мбар во время эпитаксиального выращивания, размещенный в вакуумной камере подложкодержатель, установленный с возможностью закрепления и нагрева подложек, источники испарения веществ и ввода частиц пара в вакуумную камеру, которые являются частицами металлов в элементной форме, металлических сплавов и легирующих примесей, систему ввода и распределения газов в вакуумную камеру, источник подачи плазмы в вакуумную камеру, генератор магнитного поля для создания магнитного поля, позволяющего придать требуемую форму плазме в вакуумной камере. Вакуумная камера выполнена с возможностью осуществления в ней диффузного распространения частиц газов и паров металлов, активизации газов ...

Verfahren zum Herstellen kristalliner Siliziumschichten fuer photoelektrische Zwecke

Process for the manufacture of nuclear matters comprising a metal component, in particular ceramic nuclear fuels, and installation allowing the realization of this process.

System and process for high-density,low-energy plasma enhanced vapor phase epitaxy

An apparatus and process for fast epitaxial deposition of compound semiconductor layers includes a low-energy, high-density plasma generating apparatus for plasma enhanced vapor phase epitaxy. The process provides in one step, combining one or more metal vapors with gases of non-metallic elements in a deposition chamber. Then highly activating the gases in the presence of a dense, low-energy plasma. Concurrently reacting the metal vapor with the highly activated gases and depositing the reaction product on a heated substrate in communication with a support immersed in the plasma, to form a semiconductor layer on the substrate. The process is carbon-free and especially suited for epitaxial growth of nitride semiconductors at growth rates up to 10 nm/s and substrate temperatures below 1000°C on large-area silicon substrates. The process requires neither carbon-containing gases nor gases releasing hydrogen, and in the absence of toxic carrier or reagent gases, is environment friendly.

Verfahren zum Aufdampfen einkristalliner Siliziumschichten auf aus einkristallinem Silizium bestehenden Trägerkörpern

Verfahren zur Herstellung von Einkristallen von Kernbrennstoffen mit metallischer Komponente, insbesondere von keramischen Kernbrennstoffen, und Anordnung zur Durchführung des Verfahrens

SiC-MONOCRYSTAL GROWTH CRUCIBLE

Differentiated-temperature reaction chamber

The present invention relates to a reaction chamber (1) for an epitaxial reactor, provided with walls delimiting an inner cavity (10), specifically a lower wall (3) and an upper wall (2) and at least two side walls (4,5); the lower wall (3) and the upper wall (2) have different configurations and/or arc made of different materials; this allows the lower wall (3) to be heated to a higher temperature than the upper wall (2). The present invention also relates to a method for heating a reaction chamber.

EQUIPMENT Of EPITAXY BY MOLECULAR JET

Équipement d'épitaxie comprenant une enceinte d'épitaxie sous vide contenant un support du substrat, et à au moins une cellule d'évaporation sous vide du matériau d'épitaxie fermée par un diaphragme présentant au moins une lumière et communiquant avec l'enceinte d'épitaxie par une bride de liaison. Il comprend en outre une plaque mobile dont la section correspond à la section du diaphragme, placée en regard dudit diaphragme perforé.

CELLULE POUR EPITAXIE PAR JETS MOLECULAIRES ET PROCEDE ASSOCIE

CELLULE POUR EPITAXIE PAR JETS MOLECULAIRES. ELLE COMPORTE UNE CHAMBRE DE VAPORISATION 21 CONTENANT LE MATERIAU 23 A VAPORISER, MUNIE D'AU MOINS UNE OUVERTURE DE SECTION DETERMINEE POUR MAINTENIR LE MATERIAU A VAPORISER 23 A L'ETAT LIQUIDE A L'INTERIEUR DE LADITE CHAMBRE 21 ET POUR EMETTRE DES JETS MOLECULAIRES A FLUX CONTROLE, UN MANCHON 35 SOLIDAIRE DE LA CHAMBRE DE VAPORISATION 21, ENTOURANT LA (OU LES) OUVERTURES(S) 27 A SECTION DETERMINEE, DES MOYENS DE CHAUFFAGE 37 POUR MAINTENIR LA CHAMBRE DE VAPORISATION 21 ISOTHERME ET OBTENIR UNE TEMPERATURE SUFFISANTE DANS LE MANCHON 35 AFIN D'EVITER LA CONDENSATION DU MATERIAU VAPORISE DANS LEDIT MANCHON ET DANS LA (OU LES) OUVERTURES(S) A SECTION DETERMINEE.

SiC WAFER AND MANUFACTURING METHOD OF SiC WAFER

In a SiC wafer, a difference between a threading dislocation density of threading dislocations exposed on a first surface and a threading dislocation density of threading dislocations exposed on a second surface is 10% or less of the threading dislocation density of the surface with a higher threading dislocation density among the first surface and the second surface, and 90% or more of the threading dislocations exposed on the surface with a higher threading dislocation density among the first surface and the second surface extend to the surface with a lower threading dislocation density.

METHODS FOR THE SYNTHESIS, PURIFICATION AND CRYSTAL GROWTH OF INORGANIC CRYSTALS FOR HARD RADIATION DETECTORS

Methods for purifying reaction precursors used in the synthesis of inorganic compounds and methods for synthesizing inorganic compounds from the purified precursors are provided. Also provided are methods for purifying the inorganic compounds and methods for crystallizing the inorganic compounds from a melt. γ and X-ray detectors incorporating the crystals of the inorganic compounds are also provided.

SUPERCONDUCTOR-SEMICONDUCTOR FABRICATION

A mixed semiconductor-superconductor platform is fabricated in phases. In a masking phase, a dielectric mask is formed on a substrate, such that the dielectric mask leaves one or more regions of the substrate exposed. In a selective area growth phase, a semiconductor material is selectively grown on the substrate in the one or more exposed regions. In a superconductor growth phase, a layer of superconducting material is formed, at least part of which is in direct contact with the selectively grown semiconductor material. The mixed semiconductor-superconductor platform comprises the selectively grown semiconductor material and the superconducting material in direct contact with the selectively grown semiconductor material.

MOLECULAR BEAM EPITAXY EQUIPMENT

Epithaxy equipment comprising an epitaxy vacuum chamber containing a substrate support and at least one cell for vacuum evaporation of epitaxy material closed by a diaphragm having at least one opening and communicating with the epitaxy chamber by a connecting brace element. The inventive equipment also comprises a moveable plate whose cross-section corresponds to the cross-section of the diaphragm and which is placed opposite said perforated diaphragm.

Cell for epitaxial growth by molecular jets, and associated process

It comprises a vaporization chamber containing the material to be vaporized and provided with at least one opening with a given cross-section for maintaining the material to be vaporized in the liquid state within said chamber and for emitting controlled flow molecular beams, a sleeve integral with the vaporization chamber surrounding the opening or openings having a given cross-section, heating means for maintaining the vaporization chamber isothermal and for obtaining an adequate temperature in the sleeve to prevent condensation of the vaporized material in said sleeve and in the opening or openings having a given cross-section.

Method and apparatus for conducting heat to or from an article being treated under vacuum

A method and apparatus are disclosed for providing heat conduction between a semiconductor wafer (24) being treated in a vacuum chamber under vacuum, and a support member (36) via a gas under pressure of about 0.5 to 2.0 Torr injected between the wafer and the support member. The wafer is clamped to the support member by a clamp (43) and the support member which is cooled to cool the wafer which in the particular example is subjected to ion implantation. A seal (47) is provided between the wafer and the support member adjacent the periphery of the wafer although this is not essential. By heating the support member the wafer may be heated by thermal conduction through the gas in other suitable vacuum treatments.

Transparent heating apparatus having at least two zones at different temperatures

Behälter aus pyrolytischem Bornitrid und seine Herstellung

Vorrichtung zum Herstellen von SiC-Einkristallen

WÄRMEISOLIERENDES ABSCHIRMUNGSELEMENT UND EINKRISTALL-HERSTELLUNGSVORRICHTUNG, WELCHE DIESES AUFWEIST

Durch die vorliegende Erfindung wird ein wärmeisolierendes Abschirmungselement bereitgestellt, das zwischen einem SiC-Quellengehäuse (3) und einem Substratträger (4) in einer Einkristall-Herstellungsvorrichtung (10) angeordnet ist und verwendet wird, wobei die Einkristall-Herstellungsvorrichtung (10) einen Kristallzüchtungsbehälter (2) und ein Heizelement (5), das am Außenrand des Kristallzüchtungsbehälters (2) angeordnet ist, aufweist, wobei der Kristallzüchtungsbehälter (2) das SiC-Quellengehäuse (3), das an einem unteren Abschnitt der Vorrichtung angeordnet ist, und den Substratträger (4), der oberhalb des SiC-Quellengehäuses (3) angeordnet ist und ein für die Kristallzüchtung verwendetes Substrat (S) derart trägt, dass es dem SiC-Quellengehäuse (3) zugewandt ist, aufweist und wobei die Einkristall-Herstellungsvorrichtung (10) dafür ausgelegt ist, einen Einkristall (W) aus einer SiC-Quelle (M) auf dem Substrat (S) durch Sublimation der SiC-Quelle (M) von dem SiC-Quellengehäuse (3) zu ...

METHOD AND APPARATUS FOR CONDUCTING HEAT TO OR FROM AN ARTICLE BEING TREATED UNDER VACUUM

Kristallzüchtungsvorrichtung, Verfahren zum Herstellen eines Siliziumkarbid-Einkristalls, Siliziumkarbid-Einkristallsubstrat und Siliziumkarbid-Epitaxiesubstrat

Eine Kristallzüchtungsvorrichtung (50) umfasst: eine Kammer (20) mit einem Gaseinlass (21), einem Gasauslass (22), einem Schweißabschnitt und einem Wasserkühlungsabschnitt, der zum Kühlen eines Abschnitts mit Wasser ausgebildet ist, der wenigstens den Schweißabschnitt umfasst; eine Absaugpumpe (30), die mit dem Gasauslass (22) verbunden ist; ein Taupunktinstrument (40), das zwischen dem Gasauslass (22) und der Absaugpumpe (30) angeordnet ist, wobei das Taupunktinstrument (40) ausgebildet ist, um einen Taupunkt von Gas zu messen, das durch den Gasauslass (22) hindurchtritt.

PROCEDURE FOR DONATING OF CESIUM AND YOUR USE FOR the PRODUCTION OF SCREENS OF TYPE ßOLEDß

SUBSTRATE HEATING APPARATUS FOR MOLECULAR BEAM EPITAXY

A substrate heating arrangement suitable for use in ultra-high vacuum MBE includes a filament responsive to a DC current for generating thermal energy, a metallic enclosure surrounding the filament and having an aperture at one end thereof, an intermediate semiconductor substrate parallel to and separated from a semiconductor growth substrate, and a substrate support mounted to the enclosure capable of holding the substrates in the prescribed relationship. The intermediate semiconductor substrate regulates the temperature on the surface of the semiconductor growth substrate to be less than or equal to a fixed temperature (approximately 1100.degree.C for silicon) regardless of the DC current applied to the filament.

METHOD AND APPARATUS FOR THE CONTINUOUS PRODUCTION AND FUNCTIONALIZATION OF SINGLE-WALLED CARBON NANOTUBES USING A HIGH FREQUENCY INDUCTION PLASMA TORCH

An integrated method and apparatus to continuously produce purified Single Wall Carbon Nanotubes (SWNT) from a continuous supply of solid carbon powder fed to an induction plasma torch. The method incorporates a two stage catalytic process that both aids in the growth of the SWNT from the carbon feed stock and also assist in creating the appropriate plasma conditions necessary for the efficient transfer of energy to the SWNT growth region within the plasma. The method and apparatus further incorporates a purification process that increases the purity of the as grown SWNT to levels > 75% in an entirely pH-neutral environment.

SUBSTRATE HEATING APPARATUS FOR MOLECULAR BEAM EPITAXY

EQUIPMENT Of EPITAXY BY MOLECULAR JET

CELL FOR EPITAXY BY MOLECULAR JETS AND PROCESS ASSOCIATES

DEVICE Of EVAPORATION OF VACUUM MERCURY HAS a CONSTANT LEVEL FOR CELL INTENDED FOR the EPITAXIAL GROWTH OF SEMICONDUCTORS

METHOD AND DEVICE OF PREPARATION OF MONOCRYSTALS FROM THE GAS PHASE

Method of preparation of monocrystals by sublimation

METHOD FOR THE VAPOUR-PHASE GROWTH OF SINGLE CRYSTALS

DISPOSITIF CHAUFFANT TRANSPARENT COMPRENANT AU MOINS DEUX ZONES A TEMPERATURES DIFFERENTES

L'INVENTION SE RAPPORTE AUX FOURS A PLUSIEURS ZONES. ELLE CONCERNE UN DISPOSITIF CHAUFFANT TRANSPARENT AYANT AU MOINS DEUX ZONES DE TRAVAIL POUVANT ETRE CHAUFFEES A DES TEMPERATURES DIFFERENTES, QUI COMPREND UNE ENCEINTE TRANSPARENTE OUVRABLE, FORMEE D'AU MOINS DEUX PARTIES 20, 21 AMOVIBLES ET ACCOUPLABLES DE FACON ETANCHE, CETTE ENCEINTE ETANT POURVUE D'UN ORIFICE 22 POUVANT ETRE RELIE A UNE SOURCE DE VIDE POUSSE OU A DES MOYENS D'INTRODUCTION D'UNE ATMOSPHERE, CARACTERISE EN CE QU'IL COMPREND, EN OUTRE, DES MOYENS DE CHAUFFAGE CONSTITUES PAR AU MOINS UNE COUCHE ELECTROCONDUCTRICE RESISTANTE TRANSPARENTE 24, 25, 26 EN CONTACT D'ECHANGE THERMIQUE AVEC UNE PORTION AU MOINS DE LADITE ENCEINTE, ET DES MOYENS D'APPLICATION D'UN COURANT ELECTRIQUE EN AU MOINS DEUX POINTS ESPACES DE LADITE COUCHE, DE FACON A PERMETTRE LE CHAUFFAGE DE L'ENCEINTE PAR EFFET JOULE. UTILISATION NOTAMMENT POUR LA PRODUCTION DE MONOCRISTAUX D'HGI.

PROCESS Of EVAPORATION AND CAST IRON OF SILICON AND DEVICE FOR SA IMPLEMENTED

Silicon carbide substrate

The silicon carbide substrate according to the present disclosure is provided with a main surface. The maximum diameter thereof is 150 mm or greater. In the main surface, the total area of regions in which the concentrations of sodium, aluminum, potassium, calcium, titanium, iron, copper and zinc are each lower than 5*1010 atoms/cm2 amounts to 95% or more relative to the area of the main surface.

FORFARANDE OCH ANORDNING FOR SMELTNING OCH FORANGNING AV KISEL

DIFFERENTIATED-TEMPERATURE REACTION CHAMBER

The present invention relates to a reaction chamber (1) for an epitaxial reactor, provided with walls delimiting an inner cavity (10), specifically a lower wall (3) and an upper wall (2) and at least two side walls (4,5); the lower wall (3) and the upper wall (2) have different configurations and/or arc made of different materials; this allows the lower wall (3) to be heated to a higher temperature than the upper wall (2). The present invention also relates to a method for heating a reaction chamber.

DEVICE AND PROCESS FOR PRODUCING SiC SINGLE CRYSTALS

In a process and a device for producing SiC single crystals (20), a reaction chamber (2), in which there is a seed crystal (21) for the separation of a SiC single crystal (20) from the gas phase, is connected to a storage chamber (4) which is at least partly filled with a supply of SiC (40) by a gas channel (3) with a predetermined cross-section for conveying the SiC in the gas phase. The supply of SiC (40) is sublimated in a heating device (6) and a temperature gradient is created in the reaction chamber (2). It is thus possible to produce SiC single crystals of high crystalline quality and single-crystal yield, and having any cross-sectional area because the conveyance rate of the gas molecules can be precisely adjusted.

PYROLYTIC BORON NITRIDE CONTAINER

PROBLEM TO BE SOLVED: To provide a pyrolytic boron nitride container, capable of melting and depositing the vapor of a substance reactive with pyrolytic boron nitride or boron and nitrogen and having wide general-purpose properties. SOLUTION: This pyrolytic boron nitride container is composed by forming a protecting layer comprising preferably carbon or a high-melting metal unreactive with a melt in the container so as not to react the pyrolytic boron nitride or its decomposition product with the melt on the inner or the whole surface of the container, in the pyrolytic boron nitride container made of the pyrolytic boron nitride as a substrate. COPYRIGHT: (C)1997,JPO ...

СПОСОБ, УСТАНОВКА ДЛЯ ЭПИТАКСИАЛЬНОГО ВЫРАЩИВАНИЯ ПОЛУПРОВОДНИКОВ, УСТРОЙСТВО ГЕНЕРАЦИИ НИЗКОТЕМПЕРАТУРНОЙ ПЛАЗМЫ ВЫСОКОЙ ПЛОТНОСТИ, ЭПИТАКСИАЛЬНЫЙ СЛОЙ НИТРИДА МЕТАЛЛА, ЭПИТАКСИАЛЬНАЯ ГЕТЕРОСТРУКТУРА НИТРИДА МЕТАЛЛА И ПОЛУПРОВОДНИК

... 1. Вакуумная установка для эпитаксиального выращивания полупроводников, содержащая вакуумную камеру (20, 200) с регулируемым давлением, размещенный в вакуумной камере подложкодержатель (50, 230), установленный с возможностью закрепления и нагрева подложек (54, 400), источники (40, 40', 62, 62', 300, 300') испарения веществ и ввода частиц пара в вакуумную камеру, которые являются частицами металлов в элементной форме, металлических сплавов и легирующих примесей, систему (22', 23', 240') ввода и распределения газов в вакуумную камеру, источник (31, 100) подачи плазмы в вакуумную камеру (20, 200), дополнительный генератор (70, 250) магнитного поля создания магнитного поля, позволяющего придать требуемую форму плазме (36, 140) в вакуумной камере (20, 200), отличающаяся тем, что она выполнена с возможностью осуществления диффузного распространения частиц газов и паров металлов в вакуумной камере (20, 200), активизации газов и паров металлов плазмой (36, 140) для вступления в реакцию и формирования ...

Kristallzüchtungsanlage zur Herstellung eines Einkristalls

Kristallzüchtungsanlage umfassend einen Wachstumstiegel zur Herstellung und/oder Vergrößerung eines Einkristalls (4),wobei die Kristallzüchtungsanlage eine erste thermische Isolation (5) mit einer ersten Wärmeleitfähigkeit und eine zweite thermische Isolation (12) mit einer zweiten Wärmeleitfähigkeit aufweist,wobei der Wachstumstiegel einen Tiegelboden, eine Tiegelseitenwand und einen Tiegeldeckel aufweist, wobei die Tiegelseitenwand mittelbar oder unmittelbar von der ersten thermischen Isolation (5) umgeben ist, wobei die zweite thermische Isolation (12) mittelbar oder unmittelbar oberhalb des Tiegeldeckels angeordnet ist,und wobei die zweite Wärmeleitfähigkeit größer als die erste Wärmeleitfähigkeit ist.

APPARATUS FOR THE GROWTH OF SEMICONDUCTOR CRYSTALS

An apparatus for the growth of semiconductor crystals in which the surface of a substrate is irradiated with molecular beam containing elements by which semiconductor thin films are formed on the substrate within a molecular beam epitaxial growth chamber in a high vacuum, thereby achieving molecular beam epitaxial growth of semiconductor thin films onto the substrate, wherein said molecular beam epitaxial growth chamber comprises an optical window through which light is introduced into said growth chamber and irradiates the surface of said substrate during molecular beam epitaxial growth.

GROWTH OF COMPOUND SEMICONDUCTOR CRYSTAL

MANUFACTURING SEMICONDUCTOR DEVICES

Vorrichtung zum Züchten von Kristallen mit einer thermischen Umhüllungseinheit

Die Erfindung betrifft eine Vorrichtung (200) zum Züchten von Kristallen, umfassend einen Tiegel (201) und eine diesen umgebende Umhüllungseinheit (206) zur thermischen Dämmung des Tiegels (201). Mittels einer Halteeinheit (207) ist die Umhüllungseinheit (206) in ihrer Position relativ bezüglich des Tiegels (201) an diesem gehalten. Die Halteeinheit (207) umfasst zumindest ein länglich ausgebildetes, bevorzugt biegeschlaffes, Halteelement (208) mit einem ersten und zweiten Endabschnitt (209, 210). Das Halteelement (208) umgibt die Umhüllungseinheit (206) umfänglich an der vom Tiegel (201) abgewendeten Seite und liegt an dieser an. Die beiden Endabschnitte (209, 210) sind miteinander gekoppelt, wobei vom Halteelement (208) eine in radialer Richtung auf die Umhüllungseinheit (206) wirkende Haltekraft aufgebracht ist.

DEVICE TO AXIAL GRADIENT TRANSPORT AND PROCEDURE FOR THE PRODUCTION OF LARGE SIZED SILICON CARBIDE SINGLE CRYSTALS

APPARATUS AND METHOD FOR MOLECULAR BEAM EPITAXY

An apparatus and method for molecular beam epitaxy are described herein. The apparatus comprises an enclosure defining a vacuum chamber. A substrate holder is mounted within the vacuum chamber. At least one molecular beam source is in fluid communication with the vacuum chamber. A cooling shroud having at least one surface is mounted within the vacuum chamber spaced from the substrate holder. A cryocooler having at least a portion extending into the vacuum chamber is operatively coupled to the cooling shroud for extracting heat therefrom, and cooling the at least one surface of the cooling shroud to cryogenic temperatures.

MBE DEVICE AND METHOD FOR THE OPERATION THEREOF

A molecular beam epitaxy (MBE) device (100) which is designed for the reactive deposition of a group III nitride compound semiconductor comprises a vacuum chamber (10) which comprises at least one molecular beam source (11) and at least one injector (12) designed to inject ammonia into the vacuum chamber (10), a first cold trap device (20) comprising at least one cold trap (21, 22) designed to condense excess ammonia, a pump device (30) comprising at least one pump (31, 33, 35) designed to evacuate the vacuum chamber (10), and a barrier device (40), by means of which the first cold trap device (20) can be separated from the vacuum chamber (10). A method for operating an MBE device is also described.

NANOMETER SIZED STRUCTURES GROWN BY PULSED LASER DEPOSITION

Nanometer sized materials can be produced by exposing a target to a laser source to remove material from the target and deposit the removed material onto a surface of a substrate to grow a thin film in a vacuum chamber.

Process for the manufacture of nuclear matter monocrystals comprising a metal component, in particular ceramic nuclear fuels, and installation allowing the realization of this process

탄화규소 단결정의 제조 방법

... 본 발명은 도가니 내의 원료의 가열 상태를 더 정확하게 검출하고, 성장 조건을 제어하면서 SiC 단결정을 제조할 수 있는 승화 재결정법에 의한 제조 방법을 제공한다. 상기 방법은, 유도 가열 코일에 흐르게 하는 고주파 전류를 얻기 위하여, 교류 전류를 직류 전류로 변환하는 컨버터 수단과, 컨버터 수단으로부터 출력되는 직류 전류를 고주파 변환하여 고주파 전류를 얻는 인버터 수단을 가지고 있고, 미리, 탄화규소 단결정의 성장 시에 있어서의 상기 컨버터 수단에서 변환한 직류 전압값(DCV)과 직류 전류값(DCI)으로부터 산출되는 직류 등가 저항값(DCV/DCI)의 경시적 변화와, 성장시킨 탄화규소 단결정에 형성된 마이크로 파이프 밀도의 관계를 파악하고, 상기 미리 파악한 직류 등가 저항값과 마이크로 파이프 밀도의 관계에 기초하여, 상기 컨버터 수단의 DCV 또는 DCI 중 적어도 하나를 조정하는 것을 특징으로 한다.

SiC seed crystal and method thereof, SiC ingot produced by growing said SiC seed crystal and method thereof, and SiC wafer produced from said SiC ingot and SiC wafer with epitaxial film and methods respectively for producing said SiC wafer

The present invention addresses the problem of providing a novel technique whereby it becomes possible to provide a high-quality SiC seed crystal, a SiC ingot, a SiC wafer and a SiC wafer with an epitaxial film. The present invention is a method for producing a SiC seed crystal for growing a SiC ingot, the method including a heat treatment step S1 of heat-treating a SiC single crystal body 10 under an atmosphere containing a Si element and a C element. It becomes possible to produce a high-quality SiC seed crystal 11 by heat-treating the SiC single crystal body 10 under an atmosphere containing a Si element and a C element.

Crystal growth apparatus and crystal growth method

The present invention pertains to a crystal growth apparatus for growing a SiC crystal on a SiC seed substrate by a sublimation method wherein a SiC starting material is sublimated by heating, said apparatus comprising: a main body which houses the SiC starting material; a growth container which is made of graphite and provided with a lid body, said lid body also serving as a base for bonding the SiC seed substrate thereto and being attached to the upper part of the main body with the SiC seed substrate facing inward; a heat insulating material surrounding the growth container; and a heater heating the SiC starting material, characterized in that the ratio t2/t1 (wherein t1 stands for the thickness of the SiC seed substrate and t2 stands for the thickness of the base) is less than 5. Thus, provided is a crystal growth apparatus wherein a stress caused by a difference in properties between the SiC seed substrate and the graphite base is absorbed so that the crystalline qualities of the SiC ...

DEVICE FOR MEASURING DISTRIBUTION OF THERMAL FIELD IN CRUCIBLE

A device for measuring distribution of thermal field in a crucible comprises a crucible comprising an upper lid, a body, a growth chamber and a material source zone; a thermally insulating material disposed outside the crucible; a movable heating component for heating the crucible; a plurality of thermocouples enclosed by insulating, high temperature resistant material and disposed in the crucible after being inserted into a plurality of holes on the upper lid to measure distribution of thermal field in the crucible. The thermocouples enclosed by insulating, high temperature resistant material are effective in measuring and adjusting temperature distribution in the crucible to achieve optimal temperature distribution for crystal growth in the crucible.

СПОСОБ ПОЛУЧЕНИЯ ЮВЕЛИРНОГО КАМНЯ

Изобретение относится к ювелирной промышленности и может быт использовано при изготовлении вставок в ювелирные изделия, имитирующие алмаз. Монокристаллический карбид кремния выращивают путём сублимации на расположенный в реакционной камере на подложке-ленте затравочный кристалл, например SiC-монокристалл политипа 4Н, 6H или 3C. Внутреннюю стенку реакционной камеры, по меньшей мере часть которой изготовлена из карбида кремния, нагревают до 2100-2300 °С. Реакционную камеру вакуумируют, регулируя давление воздуха в ней в интервале 1000-10000 Па. К поверхности подложки-ленты подают карбид кремния в жидком состоянии, одновременно перемещая подложку-ленту в горизонтальной плоскости со скоростью 0,2-2,0 м/мин. Выращенные кристаллы разделяют на отдельные кристаллы, подвергают огранке и шлифовке до обработанного драгоценного камня. Огранку можно проводить на абразивных дисках с размером зерна от 20 до 100 мкм или на шлифовальных дисках с размером зерна абразива от 3 до 10 мкм. Поверхности граней ...

n-Typ-SiC-Einkristallsubstrat, Verfahren zur Herstellung desselben und SiC-Epitaxiewafer

Es wird ein n-Typ-SiC-Einkristallsubstrat gemäß der vorliegenden Erfindung bereitgestellt, das ein Substrat ist, welches sowohl mit einem Donor als auch mit einem Akzeptor dotiert ist und eine Differenz zwischen der Donorkonzentration und der Akzeptorkonzentration in einem äußeren Umfangsabschnitt aufweist, die kleiner als eine Differenz zwischen der Donorkonzentration und der Akzeptorkonzentration in einem zentralen Abschnitt ist und die kleiner als 3,0 × 10/cmist.

Behälter aus pyrolytischem Bornitrid und seine Herstellung

Apparatus for crystal growth

A METHOD FOR THE GROWTH OF A COMPOUND SEMICONDUCTOR CRYSTAL

DEVICES FOR MOLECULAR BEAM EPITAXY

Vorrichtung zum Züchten von Kristallen mit einer thermischen Umhüllungseinheit

Die Erfindung betrifft eine Vorrichtung (200) zum Züchten von Kristallen, umfassend einen Tiegel (201) und eine diesen umgebende Umhüllungseinheit (206) zur thermischen Dämmung des Tiegels (201). Mittels einer Halteeinheit (207) ist die Umhüllungseinheit (206) in ihrer Position relativ bezüglich des Tiegels (201) an diesem gehalten. Die Halteeinheit (207) umfasst zumindest ein länglich ausgebildetes, bevorzugt biegeschlaffes, Halteelement (208) mit einem ersten und zweiten Endabschnitt (209, 210). Das Halteelement (208) umgibt die Umhüllungseinheit (206) umfänglich an der vom Tiegel (201) abgewendeten Seite und liegt an dieser an. Die beiden Endabschnitte (209, 210) sind miteinander gekoppelt, wobei vom Halteelement (208) eine in radialer Richtung auf die Umhüllungseinheit (206) wirkende Haltekraft aufgebracht ist.

METHOD AND DEVICE OF PREPARATION OF MONOCRYSTALS FROM THE GAS PHASE

CELL FOR EPITAXY BY MOLECULAR JETS AND PROCESS ASSOCIATES

Dispositif d'evaporation du mercure sous vide a un niveau constant pour cellule destinee a la croissance epitaxiale de semi-conducteurs

La presente invention est du domaine de l'evaporation du mercure sous vide pour la croissance epitaxiale des semi-conducteurs, notamment des semi-conducteurs constitues par des elements des groupes II a VI de la classification periodique. Selon l'invention, on prevoit un dispositif d'alimentation d'une cellule d'evaporation du mercure sous vide a niveau constant. Ce dispositif est constitue d'une cellule d'evaporation du mercure 1 associee a des moyens 6, 7, 8, 9 permettant le remplissage, la mise a niveau ou le vidage du mercure dans la cellule par deplacement en translation verticale des moyens d'alimentation 12 en mercure, ce deplacement pouvant etre effectue soit manuellement soit par l'intermediaire de moyens moteurs, eventuellement associes a des moyens electro-informatiques de controle.

PROCEDE D'EVAPORATION ET DE FONTE DU SILICIUM ET DISPOSITIF POUR SA MISE EN OEUVRE

CE PROCEDE UTILISE POUR FORMER UN BAIN DE FUSION DE SILICIUM UN CORPS SOLIDE 10 DE SILICIUM QUI EST PERCE POUR FOURNIR DES ALESAGES DANS LESQUELS SERONT INSEREES DES ELECTRODES 13, 24, 25. LES ELECTRODES SONT DE PREFERENCE AUSSI EN SILICIUM ET UN COURANT ELECTRIQUE PASSE A TRAVERS LES ELECTRODES 24, 25 POUR FORMER UN ARC QUI PROVOQUE LA FUSION DU CORPS EN CREUSANT A L'INTERIEUR DE CELUI-CI UNE CAVITE CONTENANT LA MASSE EN FUSION. LA MASSE EN FUSION EST UTILISEE POUR TIRER DES BARRES DE SILICIUM, RECOUVRIR DE SILICIUM, SOUS FORME DE VAPEUR, OBTENU A PARTIR DU BAIN DE FUSION OU UN SUBSTRAT PLACE DANS UNE CHAMBRE SOUS VIDE.

METHOD OF MANUFACTURING A CRYSTALLIZED METAL OXIDE THIN FILM CRYSTALLIZING THE THIN FILM WHILE IRRADIATING ULTRAVIOLET RADIATION, AND USAGE THEREOF

PURPOSE: A method of manufacturing a crystallized metal oxide thin film and usage thereof are provided to make a phosphor thin film material of high performance by forming the crystallized thin film containing Y2O3 on a substrate. CONSTITUTION: An organic metal thin film or a metal oxide film containing at least one type of rare-earth metal element selected from a group comprised of Y, Dy, Sm, Gd, Ho, Eu, Tm, Tb, Er, Ce, Pr, Yb, La, Nd and Lu formed on a substrate is retained in at a temperature of 25 to 600 deg.C. The organic metal thin film or the metal oxide film is crystallized while irradiating ultraviolet radiation having a wavelength of 200 nm or less. The organic metal thin film or the metal oxide film is prepared by sputtering, MBE(Molecular Beam Epitaxy), vacuum deposition, CVD, or a chemical solution deposition method. © KIPO 2008 ...

SINGLE CRYSTAL GROWING APPARATUS

This invention provides a single crystal growing apparatus characterized in that a cylindrical guide member (6) comprising an internal passage narrowed from a raw material (3) side toward a seed crystal (5) side is provided, and, in the guide member (6), a second cylindrical member (8) is disposed through a heat insulating layer (23) on the inner side of a first cylindrical member (7).In the apparatus, a high-quality single crystal of silicon carbide can be grown even in crystal growth for a long period of time by keeping the inner wall temperature (Tg2) of the second cylindrical member (8) during the crystal growth above the surface temperature (Tc) of a single crystal (9) of silicon carbide.

SHIELDING MEMBER AND MONOCRYSTAL GROWTH DEVICE PROVIDED THEREWITH

Disclosed is a shielding member that has a remarkable radial equalizing effect on the surface temperatures of a seed crystal and a grown crystal, making it possible to manufacture long, high-quality monocrystals. Also disclosed is a monocrystal growth device provided with said shielding member. In the disclosed monocrystal growth device, a feedstock is sublimated from a feedstock storage section, thereby growing a monocrystal, comprising the feedstock, on a substrate. The monocrystal growth device is provided with: a crystal growth container; the aforementioned feedstock storage section, which is positioned in the bottom part of the crystal growth chamber; a substrate support section that is disposed above the feedstock storage section and that supports the substrate so as to face the feedstock storage section; and a heating device disposed on the outside edge of the crystal growth container. The shielding member is used between the feedstock storage section and the substrate support section ...

IMPROVED AXIAL GRADIENT TRANSPORT (AGT) GROWTH PROCESS AND APPARATUS UTILIZING RESISTIVE HEATING

A crucible has a first resistance heater is disposed in spaced relation above the top of the crucible and a second resistance heater with a first resistive section disposed in spaced relation beneath the bottom of the crucible and with a second resistive section disposed in spaced relation around the outside of the side of the crucible. The crucible is charged with a seed crystal at the top of an interior of the crucible and a source material in the interior of the crucible in spaced relation between the seed crystal and the bottom of the crucible. Electrical power of a sufficient extent is applied to the first and second resistance heaters to create in the interior of the crucible a temperature gradient of sufficient temperature to cause the source material to sublimate and condense on the seed crystal thereby forming a growing crystal.

DEVICE AND PROCESS FOR PRODUCING SiC SINGLE CRYSTALS

In a process and a device for producing SiC single crystals (20), a reaction chamber (2), in which there is a seed crystal (21) for the separation of a SiC single crystal (20) from the gas phase, is connected to a storage chamber (4) which is at least partly filled with a supply of SiC (40) by a gas channel (3) with a predetermined cross-section for conveying the SiC in the gas phase. The supply of SiC (40) is sublimated in a heating device (6) and a temperature gradient is created in the reaction chamber (2). It is thus possible to produce SiC single crystals of high crystalline quality and single-crystal yield, and having any cross-sectional area because the conveyance rate of the gas molecules can be precisely adjusted.

Channel evaporator

An evaporator for containing a second material which is to be evaporated onto a remotely located surface after a first evaporation of a first material, comprises a tubular member having crimped ends for preventing the second material from combining with the first material during the first evaporation thereof and an aperture for allowing the escape of the second material from the evaporator during evaporation of the second material, the aperture being formed on a flattened area of the tubular member.

METHOD FOR GROWING CRYSTALS

A method for growing crystals using PVT or PVD or CVD, includes: providing: a chamber for crystal growth, a crucible in the chamber including at least one deposition section with a seed crystal and a base material for crystal growth, at least one temperature monitoring device, a gas supply device and at least one fluid inlet and outlet, and a pressure monitoring device; evacuating the chamber using a pumping device; flushing the chamber with an inert gas; heating the chamber to a growth temperature of 2000 to 2400° C. using at least one heating device; decreasing pressure to 0.1 to 100 mbar; supplying a dopant, (during a growth process); regulating process parameters in the growth process; increasing chamber pressure at the growth process end; cooling down the chamber; wherein the heating of the chamber from an ambient temperature to the growth temperature occurs within 10 to 10000 minutes.

CRYSTAL GROWTH FURNACE SYSTEM

A crystal growth furnace system, including an external heating module, a furnace, a first driven device, a second driven device, and a control device, is provided. The furnace is movably disposed in the external heating module. The first driven device drives the furnace to move along an axis. The second driven device drives the furnace to rotate around the axis. The control device is electrically connected to the first driven device, the second driven device, and the external heating module.

Equipment for manufacturing a semiconductor device using a solid source

CRYSTAL GROWTH DEVICE BY MOLECULAR RAY

PURPOSE: To control angle-dependent properties of intensity of atomic, molecular, or ionic rays released from a crucible, by attaching collimeters having through holes to the crucible having the interior packed with a raw material for atomic or molecular rays and the outer periphery on which a heater is wound. CONSTITUTION: The Langmuir's crucible 7 consisting of a high-purity material having reaction resistance is packed with the raw material 10 for atomic or molecular rays. The heater 6 is wound on the outer periphery of the crucible. The heater 6 heats the raw material 10 for atomic or molecular rays, evaporates or sublimates it, heats the crucible 7 mainly by heat radiation, and is held by the heater supporting member 13. The first, the second, and the third collimeters 20, 21, and 22 are set in the crucible 7. The collimeters 22 is provided with the plural disklike through-holes 23, and the through-hole 24 at the center, and the first collimeter 20 and the second collimeter 21 are ...

MBE-Einrichtung und Verfahren zu deren Betrieb

Eine Molekularstrahlepitaxie(MBE)-Einrichtung (100), die zur reaktiven Abscheidung einer Gruppe III-Nitrid-Verbindungshalbleiters eingerichtet ist, umfasst eine Vakuumkammer (10), die mindestens eine Molekularstrahl-Quelle (11) und mindestens einen Injektor (12) aufweist, der zu Injektion von Ammoniak in die Vakuumkammer (10) eingerichtet ist, eine erste Kühlfalleneinrichtung (20) mit mindestens einer Kühlfalle (21, 22), die zum Kondensieren von überschüssigem Ammoniak eingerichtet ist, eine Pumpeneinrichtung (30) mit mindestens einer Pumpe (31, 33, 35), die zur Evakuierung der Vakuumkammer (10) eingerichtet ist, und eine Sperreinrichtung (40), mit der die erste Kühlfalleneinrichtung (20) von der Vakuumkammer (10) trennbar ist. Es wird auch ein Verfahren zum Betrieb einer MBE-Einrichtung beschrieben.

Verfahren zur Regelung eines Epitaxieaufwachsverfahrens in einem Epitaxiereaktor, Regler und Datenanlysemodul für Epitaxieaufwachsverfahren

Verfahren zur Regelung eines Aufwachsverfahrens in einem Epitaxiereaktor, wobei das Verfahren Folgendes umfasst: die Durchführung eines ersten Durchlaufs des Epitaxieaufwachsverfahrens und die Regelung der Temperatur des Epitaxieaufwachsverfahrens während des ersten Durchlaufs durch eine Temperaturmessvorrichtung, die die Temperatur basierend auf einem ersten Thermoelement-Abweichungsparameterwerts bestimmt; die Optimierung der Thermoelement-Abweichungsparameter für einen zweiten Durchlauf durch die folgenden Schritte: die Messung eines tatsächlichen Ausgangsparameterwerts des Aufwachsverfahrens des ersten Durchlaufs; die Aufstellung eines modellierten Ausgangsparameterwerts als eine Funktion des tatsächlichen Ausgangsparameterwerts und eines zweiten Thermoelement-Abweichungsparameterwerts; die Bestimmung eines Abstands zwischen einem Zielausgangsparameterwert und dem modellierten Ausgangsparameterwert; die Bestimmung des zweiten Thermoelement-Abweichungswert als Thermoelement-Abweichungswert ...

Apparatus for crystal growth

METHODS OF AND APPARATUS FOR THE MELTING OF SILICON

A high-purity method of forming a silicon melt utilizes a solid silicon body which is drilled to provide bores into which electrodes are inserted. The electrodes preferably are also of silicon and an electric arc-current is passed through the electrodes to generate an arc which melts out the body to define a cavity therein containing the melt. The melt may be used for the drawing of a silicon bar or for the deposition of silicon in vapor form from the melt upon a substrate in a vacuum chamber.

Improvements in or relating to the production of silicon monocrystals

... Silicon is deposited as a monocrystalline layer on a surface of monocrystalline silicon heated to a temperature of at least 800 DEG C. from vapour formed by an intermittent electric discharge between silicon electrodes at a pressure of not more than 10-5 mm. of Hg. A spark or arc discharge may be employed. The spark gap may be 5 mm. The electrodes may have a diameter of at least 1-2 cm. and may be rotated. They may be moved alternately towards and away from the deposition surface. They may be preheated. The vessel walls and electrode mountings may be cooled. The deposition surface may have been etched with chlorine. Deposition may be effected on a plurality of small silicon crystals attached to an electrically heated base of molydenum, silicon or siliconized graphite, resistance, induction or capacitive heating being employed. The deposition surface may be 7 cm. from the electrodes. A doped layer may be produced from doped electrodes. As shown in Fig. 4, silicon from ...

Substrate heating apparatus for molecular beam epitaxy

A substrate heating arrangement suitable for use in ultra-high vacuum MBE includes a filament responsive to a DC current for generating thermal energy, a metallic enclosure surrounding the filament and having an aperture at one end thereof, an intermediate semiconductor substrate parallel to and separated from a semiconductor growth substrate, and a substrate support mounted to the enclosure capable of holding the substrates in the prescribed relationship. The intermediate semiconductor substrate regulates the temperature on the surface of the semiconductor growth substrate to be less than or equal to a fixed temperature (approximately 1100 DEG C. for silicon) regardless of the DC current applied to the filament.

Superconductor-semiconductor fabrication

Improvements in and relating to sputter deposition methods

... In an atmosphere containing an electro-negative gas, a coating of a compound of the gas is deposited by sputtering, maintaining the substrate positive relative to an anode; the substrate is then maintained negative relative to the anode and another coating deposited. The gas may react with the coating or the substrate to form the compound. Apparatus comprises a vacuum vessel formed by a bell jar 13 and a base 14 within which a substrate 10, an anode 11, a movable shutter 19 and a cathode 12 having an earthed shield 18 are disposed. Inert gas and the electro-negative reactive gas are introduced into the vessel through valved conduits 23, 24 and another valved conduit 20 is connected to a vacuum pump. To deposit tantalum on a glass substrate, a tantalum oxide adhesive layer is formed by passing argon and 1/2 % oxygen into the vessel applying a positive bias to the substrate of 3-5 volts with respect to the anode to attract oxygen ions to the substrate, and initiating ...

Molecular beam epitaxy equipment

MAGNETRON SPUTTER SOURCE FOR MBE APPARATUS

A magnetron sputter source is adapted to fit into a K-cell port in a molecular beam epitaxy apparatus. The MSE source has a protruding cylindrical body for insertion into the K-cell port. The cylindrical body is attached at its proximal end to a flange and has its distal end open. An array of permanent magnets is arranged at the distal end of the cylindrical body. A magnet return piece is mounted behind the permanent magnets. A sputter target is mounted in front of the permanent magnets, and cooling ducts within the cylindrical body carry a cooling medium to the sputter target.

METHOD AND APPARATUS FOR THE CONTINUOUS PRODUCTION AND FUNCTIONALIZATION OF SINGLE-WALED CARBON NANOTUBES USING A HIGH FREQUENCY PLASMA TORCH

n-TYPE SiC SINGLE CRYSTAL SUBSTRATE, METHOD FOR PRODUCING SAME AND SiC EPITAXIAL WAFER

GROWTH OF LARGE ALUMINUM NITRIDE SINGLE CRYSTALS WITH THERMAL-GRADIENT CONTROL

GENERATEUR DE JETS MOLECULAIRES PAR CRAQUAGE THERMIQUE POUR LA FABRICATION DE SEMI-CONDUCTEURS PAR DEPOT EPITAXIAL

LE CRAQUAGE DE L'ARSINE OU DE LA PHOSPHINE UTILISEE POUR FORMER UN JET MOLECULAIRE D'ARSENIC OU DE PHOSPHORE EST REALISE SUR LES SURFACES INTERIEURES D'UN CONDUIT DE CRAQUAGE 11 CONSTITUE DE QUARTZ OU DE NITRURE DE BORE ET CHAUFFE DE L'EXTERIEUR PAR LE RAYONNEMENT D'UN FILAMENT 30. DES CLOISONS INTERIEURES PERCEES 6A, 6B, 6C ET 6D AUGMENTENT LA SURFACE DE CRAQUAGE ET EMPECHENT UNE MOLECULE DE TRAVERSER LE CONDUIT EN LIGNE DROITE. APPLICATION A LA FABRICATION DE COMPOSANTS OPTOELECTRONIQUES.

TRANSPARENT HEATING DEVICE INCLUDING/UNDERSTANDING AT LEAST TWO ZONES HAS DIFFERENT TEMPERATURES

LOW CARBON GROUP-III NITRIDE CRYSTALS

APPARATUS FOR FABRICATING INGOT

Disclosed is an apparatus for fabricating an ingot. The apparatus comprises a crucible to receive a source material, and a temperature difference compensating part on the source material. The temperature difference compensating part comprises a plurality of holes.

Apparatus and methods for alignment of a susceptor

The embodiments described herein generally relate to a stem assembly for coupling a susceptor to a process chamber. The stem assembly includes a pivot mechanism, a first flexible seal coupled to the pivot mechanism, a second flexible seal coupled to a plate on a first side of the plate, the plate having a second side coupled to the first flexible seal, a housing coupled to the second flexible seal, and a motion assembly adapted to move the housing in an X axis and a Y axis, and position the susceptor angularly relative to an X-Y plane of the process chamber.

Fabrication methods

Various fabrication method are disclosed. In one such method, at least one structure is formed on a substrate which protrudes outwardly from a plane of the substrate. A beam is used to form a layer of material, at least part of which is in direct contact with a semiconductor structure on the substrate, the semiconductor structure comprising at least one nanowire. The beam has a non-zero angle of incidence relative to the normal of the plane of the substrate such that the beam is incident on one side of the protruding structure, thereby preventing a portion of the nanowire in a shadow region adjacent the other side of the protruding structure in the plane of the substrate from being covered with the material.

METHOD OF MEASURING A GRAPHITE ARTICLE, APPARATUS FOR A MEASUREMENT, AND INGOT GROWING SYSTEM

Example embodiments relate to a method of measurement, an apparatus for measurement, and an ingot growing system that measure properties relating an induction heating characteristic of a graphite article. The method of measurement comprises an arranging step of arranging a graphite article to the coil comprising a winded conducting wire; and a measuring step of applying power for measurement to the coil through means of measurement connected electronically to the coil, and measuring electromagnetic properties induced in the coil. The method of measurement and the like measure electromagnetic properties of graphite articles like an ingot growing container, and an insulating material, and provide data required for selecting so that further enhanced reproducibility for growth of an ingot can be secured.

SIC MONOCRYSTAL GROWTH DEVICE AND SIC CRYSTAL GROWTH METHOD

An SiC single-crystal growth apparatus and a method of growing an SiC crystal are provided capable of reducing variations in the temperature distribution in the seed crystal and/or reducing deformation of, and/or damage to, the seed crystal, thereby growing an SiC single crystal with reduced defects and/or cracks. An SiC single-crystal growth apparatus (1) includes: a heating vessel (10) including a source material-containing portion (12) adapted to contain a solid source material of SiC in one of an upper portion or a lower portion (e.g., on the bottom portion 13) of an interior space S defined by a cylindrical peripheral side portion (14), and including a seat (17) located in another portion located opposite to said one portion (e.g., lid (16)) for allowing a seed crystal (2) of SiC to be mounted thereon; and a heating member (3) adapted to heat the solid source material M(s), where: the seed crystal (12) is mounted on the seat (17) with a first anisotropic sheet (41) positioned therebetween ...

Substrate processing apparatus and solid raw material replenishing method

Disclosed is a substrate processing apparatus that includes: a processing chamber that accommodates a substrate; and a raw material supply system that sublimates a solid raw material to generate a gas raw material used for processing of the substrate, and supplies the generated gas raw material to the processing chamber. The raw material supply system includes: a solid raw material container that stores the solid raw material; a first piping connected between the solid raw material container and the processing chamber; and a second piping connected with the solid raw material container and equipped with an attachment portion to which a raw material replenishing container that holds the solid raw material for replenishment is attached.

High heat-resistant member, method for producing the same, graphite crucible and method for producing single crystal ingot

A high heat-resistant member includes a graphite substrate including isotropic graphite and a carbide coating film including a carbide, such as tantalum carbide, and covering a surface of the graphite substrate, the carbide coating film having a randomly oriented isotropic grain structure in which crystallites having a size indexed by a full width at half maximum of a diffraction peak of an X-ray diffraction spectrum of not more than 0.2° from (111) planes are accumulated at substantially random. The orientation of the carbide coating film is determined by whether degree of orientation (F) in any Miller plane calculated based on an XRD spectrum using the Lotgering method is within a range from −0.2 to 0.2.

Perovskite manganese oxide thin film

An article including a perovskite manganese oxide thin film is composed of a substrate; and a perovskite manganese oxide thin film formed on the substrate and having an orientation that is an (m 10 ) orientation where 19≧m≧2. When m is 2 the perovskite manganese oxide thin film has a ( 210 ) orientation. The invention provides a perovskite manganese oxide thin film having a transition temperature at room temperature or above, which is higher than that of the bulk oxide, by exploiting the substrate strain and the symmetry of the crystal lattice.

HIGHLY EPITAXIAL THIN FILMS FOR HIGH TEMPERATURE/HIGHLY SENSITIVE CHEMICAL SENSORS FOR CRITICAL AND REDUCING ENVIRONMENT

An oxygen sensor includes an epitaxial oxide thin film double perovskite oxygen sensor formed on a single crystal oxide substrate. The thin film includes a lanthanide element, barium, cobalt, and oxygen. 1. An oxygen sensor , comprising:a single crystal oxide substrate,a thin film double perovskite epitaxial oxide formed on the single crystal oxide substrate, wherein the thin film oxide comprises a lanthanide element, barium, cobalt, and oxygen;wherein the thin film oxide has a thickness such that the thin film oxide is capable of undergoing a reversible reaction with oxygen.2. The oxygen sensor of claim 1 , wherein the thin film oxide comprises (LnBa)CoOwhere Ln is a lanthanide element.3. The oxygen sensor of claim 1 , wherein the thin film oxide comprises (LaBa)CoO.4. The oxygen sensor of claim 1 , wherein the single crystal oxide substrate comprises LaAlO.5. The oxygen sensor of claim 1 , wherein the thin film oxide has a thickness of less than 500 nm.6. A method of making an oxygen sensor comprising: forming a thin film double perovskite epitaxial oxide on a single crystal oxide substrate claim 1 , wherein the thin film oxide comprises a lanthanide element claim 1 , barium claim 1 , cobalt claim 1 , and oxygen.7. The method of claim 6 , wherein the thin film oxide is formed on the single crystal oxide substrate using pulsed laser deposition.8. The method of claim 6 , wherein the thin film oxide is formed on the single crystal oxide substrate using pulsed laser deposition with a wavelength of 248 nm.9. The method of claim 6 , wherein the thin film oxide comprises (LnBa)CoOwhere Ln is a lanthanide element.10. The method of claim 6 , wherein the thin film oxide comprises (LaBa)CoO.11. The method of claim 6 , wherein the single crystal oxide substrate comprises LaAlO.12. The method of claim 6 , wherein the thin film oxide has a thickness of less than 500 nm.13. A method of detecting the presence of oxygen claim 6 , comprising:locating an oxygen sensor comprising a ...

APPARATUS AND METHOD FOR PRODUCTION OF ALUMINUM NITRIDE SINGLE CRYSTAL

The invention is an apparatus for production of an aluminum nitride single crystal that produces the aluminum nitride single crystal by heating an aluminum nitride raw material to sublimate the raw material, thereby to recrystallize the aluminum nitride onto a seed crystal, which includes a growth vessel that accommodates the aluminum nitride raw material, and is composed of a material that has corrosion resistance with respect to the aluminum gas generated upon sublimation of the aluminum nitride raw material, and a heating element that is arranged on the outside of the growth vessel, and heats the aluminum nitride raw material through the growth vessel, wherein the growth vessel includes a main body which has an accommodation section that accommodates the aluminum nitride and a lid which seals the accommodation section of the main body hermetically, and wherein the heating element is composed of a metal material containing tungsten. 1. An apparatus for production of an aluminum nitride single crystal that produces the aluminum nitride single crystal by heating an aluminum nitride raw material to sublimate the raw material , thereby to recrystallize the aluminum nitride onto a seed crystal , the apparatus comprising:a growth vessel that accommodates the aluminum nitride raw material, and is composed of a material that has corrosion resistance with respect to the aluminum gas generated upon sublimation of the aluminum nitride raw material, anda heating element which is arranged on the outside of the growth vessel, and heats the aluminum nitride raw material through the growth vessel, whereinthe growth vessel comprises a main body which has the accommodation section that accommodates the aluminum nitride and a lid which seals the accommodation section of the main body hermetically, and whereinthe heating element is composed of a metal material containing tungsten.2. The apparatus for production of an aluminum nitride single crystal according to claim 1 , wherein the ...

Non-polar plane of wurtzite structure material

The present invention relates to a method for growing a novel non-polar (13 0) plane epitaxy layer of wurtzite structure, which comprises the following steps: providing a single crystal oxide with perovskite structure; using a plane of the single crystal oxide as a substrate; and forming a non-polar (13 0) plane epitaxy layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process. The present invention also provides an epitaxy layer having non-polar (13 0) plane obtained according to the aforementioned method. 1. A method for growing a non-polar (13 0) plane epitaxy layer of wurtzite structure , which comprises the following steps:providing a single crystal oxide with perovskite structure;selecting a plane of the single crystal oxide as a substrate; and{'o': {'@ostyle': 'single', '4'}, 'forming a non-polar (13 0) plane epitaxy layer of wurtzite semiconductors on the plane of the substrate by a vapor deposition process.'}2. The method of claim 1 , wherein the single crystal oxide is an oxide with perovskite structure of LaAlO claim 1 , LaNiO claim 1 , LaGaO claim 1 , SrTiO claim 1 , (LaSr)(AlTa)O claim 1 , PrAlO claim 1 , or NdAlO.3. The method of claim 1 , wherein the non-polar (13 0) plane epitaxy layer is a zinc oxide claim 1 , or a Group III nitride.4. The method of claim 1 , wherein the zinc oxide is further doped with magnesium claim 1 , calcium claim 1 , strontium claim 1 , barium claim 1 , cadmium claim 1 , aluminum claim 1 , gallium claim 1 , indium claim 1 , or combinations thereof.5. The method of claim 3 , wherein the Group III nitride is gallium nitride claim 3 , indium nitride claim 3 , aluminum nitride claim 3 , indium gallium nitride claim 3 , aluminum gallium nitride claim 3 , aluminum indium nitride claim 3 , or aluminum indium gallium nitride.6. The method of claim 1 , wherein the plane is a crystal plane or a cross section of the single crystal oxide.7. The method of claim 1 , wherein the plane is a plane ...

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

A method for manufacturing silicon carbide single crystal having a diameter larger than 100 mm by sublimation includes the following steps. A seed substrate made of silicon carbide and silicon carbide raw material are prepared. Silicon carbide single crystal is grown on the growth face of the seed substrate by sublimating the silicon carbide raw material. In the step of growing silicon carbide single crystal, the maximum growing rate of the silicon carbide single crystal growing on the growth face of the seed substrate is greater than the maximum growing rate of the silicon carbide crystal growing on the surface of the silicon carbide raw material. Thus, there can be provided a method for manufacturing silicon carbide single crystal allowing a thick silicon carbide single crystal film to be obtained, when silicon carbide single crystal having a diameter larger than 100 mm is grown. 1. A method for manufacturing silicon carbide single crystal having a diameter larger than 100 mm by sublimation , said method comprising the steps of:preparing a seed substrate made of silicon carbide and silicon carbide raw material, andgrowing said silicon carbide single crystal on a growth face of said seed substrate by sublimating said silicon carbide raw material,in said step of growing said silicon carbide single crystal, a maximum growing rate of said silicon carbide single crystal growing on said growth face of said seed substrate being greater than a maximum growing rate of silicon carbide crystal growing on a surface of said silicon carbide raw material.2. The method for manufacturing silicon carbide single crystal according to claim 1 , wherein a maximum height of said silicon carbide single crystal growing on said seed substrate exceeds 20 mm in said step of growing said silicon carbide single crystal.3. The method for manufacturing silicon carbide single crystal according to claim 1 , wherein a maximum height of said silicon carbide single crystal growing on said seed ...

System and process for high-density, low-energy plasma enhanced vapor phase epitaxy

A process for epitaxial deposition of compound semiconductor layers includes several steps. In a first step, a substrate is removably attached to a substrate holder that may be heated. In a second step, the substrate is heated to a temperature suitable for epitaxial deposition. In a third step, substances are vaporized into vapor particles, such substances including at least one of a list of substances, comprising elemental metals, metal alloys and dopants. In a fourth step, the vapor particles are discharged to the deposition chamber. In a fifth step, a pressure is maintained in the range of 10̂-3 to 1 mbar in the deposition chamber by supplying a mixture of gases comprising at least one gas, wherein vapor particles and gas particles propagate diffusively. In a sixth optional step, a magnetic field may be applied to the deposition chamber. In a seventh step, the vapor particles and gas particles are activated by a plasma in direct contact with the sample holder. In an eighth step, vapor particles and gas particles are allowed to react, so as to form a uniform epitaxial layer on the heated substrate by low-energy plasma-enhanced vapor phase epitaxy.

PROCESS FOR GROWING SILICON CARBIDE SINGLE CRYSTAL BY PHYSICAL VAPOR TRANSPORT METHOD AND ANNEALING SILICON CARBIDE SINGLE CRYSTAL IN SITU

A technology for growing silicon carbide single crystals by PVT (Physical Vapor Transport) and a technology for in-situ annealing the crystals after growth is finished is provided. The technology can achieve real-time dynamic control of the temperature distribution of growth chamber by regulating the position of the insulation layer on the upper part of the graphite crucible, thus controlling the temperature distribution of growth chamber in real-time during the growth process according to the needs of the technology, which helps to significantly improve the crystal quality and production yield. After growth is finished, the inert gas pressure in growth chamber is raised and the temperature gradient of the growth chamber is reduced so that in-situ annealing the silicon carbide crystals can be carried out under a small one, which helps to reduce the stress between the crystal and the crucible lid as well as that in sublimation grown crystals to reduce the breakage ratio and improve the yield ratio during the subsequent fabrication process. 1. A process for growing silicon carbide single crystals by Physical Vapor Transport , which can achieve real-time dynamic control of the temperature distribution of a growth chamber by regulating the position of an insulation layer on the upper part of the graphite crucible , for controlling the temperature distribution of the growth chamber in real-time during the growth process according to the needs of the technology , wherein said process comprises:on loading a crucible inside the furnace, regulating the position of the insulation layer by an automatic drive and then recording a relative position of it inside the furnace body; during the growth process, using the automatic drive to adjust the relative position of the insulation layer according to the needs of the technology to make the temperature distribution of growth chamber form a desired one, wherein the structures of the upper thermal insulation layer are fitted with the ...

Large Diameter, High Quality SiC Single Crystals, Method and Apparatus

A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations.

Physical Vapor Transport Growth System For Simultaneously Growing More Than One SIC Single Crystal and Method of Growing

The present invention relates to a configuration and in particular a physical vapor transport growth system for simultaneously growing more than one silicon carbide (SiC) bulk crystal. Furthermore, the invention relates to a method for producing such a bulk SiC crystal. A physical vapor transport growth system for simultaneously growing more than one SiC single crystal boule comprises a crucible containing two growth compartments for arranging at least one SiC seed crystal in each of them, and a source material compartment for containing a SiC source material, wherein said source material compartment is arranged symmetrically between said growth compartments and is separated from each of the growth compartments by a gas permeable porous membrane.

Wavelength Converter for an LED, Method of Making, and LED Containing Same

A wavelength converter for an LED is described that comprises a substrate of monocrystalline garnet having a cubic crystal structure, a first lattice parameter and an oriented crystal face. An epitaxial layer is formed directly on the oriented crystal face of the substrate. The layer is comprised of a monocrystalline garnet phosphor having a cubic crystal structure and a second lattice parameter that is different from the first lattice parameter wherein the difference between the first lattice parameter and the second lattice parameter results in a lattice mismatch within a range of ±15%. The strain induced in the phosphor layer by the lattice mismatch shifts the emission of the phosphor to longer wavelengths when a tensile strain is induced and to shorter wavelengths when a compressive strain is induced. Preferably, the wavelength converter is mounted on the light emitting surface of a blue LED to produce an LED light source.

LATTICE MATCHING LAYER FOR USE IN A MULTILAYER SUBSTRATE STRUCTURE

A lattice matching layer for use in a multilayer substrate structure comprises a lattice matching layer. The lattice matching layer includes a first chemical element and a second chemical element. Each of the first and second chemical elements has a hexagonal close-packed structure at room temperature that transforms to a body-centered cubic structure at an α-β phase transition temperature higher than the room temperature. The hexagonal close-packed structure of the first chemical element has a first lattice parameter. The hexagonal close-packed structure of the second chemical element has a second lattice parameter. The second chemical element is miscible with the first chemical element to form an alloy with a hexagonal close-packed structure at the room temperature. A lattice constant of the alloy is approximately equal to a lattice constant of a member of group III-V compound semiconductors. 1. A lattice matching layer for use in a multilayer substrate structure , the lattice matching layer including:a first chemical element, the first chemical element having a hexagonal close-packed structure at room temperature that transforms to a body-centered cubic structure at an α-β phase transition temperature higher than the room temperature, the hexagonal close-packed structure of the first chemical element having a first lattice parameter; anda second chemical element, the second chemical element having a hexagonal close-packed structure at room temperature with similar chemical properties to the first chemical element, the hexagonal close-packed structure of the second chemical element having a second lattice parameter, the second chemical element being miscible with the first chemical element to form an alloy with a hexagonal close-packed structure at the room temperature,wherein a lattice constant of the alloy is approximately equal to a lattice constant of a member of group III-V compound semiconductors.2. The lattice matching layer of claim 1 , wherein a linear ...

Silicon carbide crystal and method of manufacturing silicon carbide crystal

An SiC crystal has Fe concentration not higher than 0.1 ppm and Al concentration not higher than 100 ppm. A method of manufacturing an SiC crystal includes the following steps. SiC powders for polishing are prepared as a first source material. A first crystal is grown by sublimating the first source material through heating and precipitating an SiC crystal. A second source material is formed by crushing the first SiC crystal. A second SiC crystal is grown by sublimating the second source material through heating and precipitating an SiC crystal. Thus, SiC crystal and a method of manufacturing an SiC crystal capable of achieving suppressed lowering in quality can be obtained.

Scintillator, method of fabricating the same and x-ray detector including the scintillator

A scintillator, which can prevent a data error due to light diffusion or spreading by improving light collimation, a method of fabricating the same and an X-ray detector including the scintillator are disclosed. The scintillator includes a substrate and a scintillator layer fanned on the substrate and having columnar crystals and non-columnar crystals, wherein each of the columnar crystals has an aspect ratio of 80:1 or greater.

CRUCIBLE AND METHOD FOR PRODUCING SINGLE CRYSTAL

A crucible has a bottom and a cylindrical side surface. In the crucible, a source material is sublimated to grow a single crystal. The crucible includes a third region configured to receive a source material, a second region extending from the third region in a direction away from the bottom, and a first region extending from the second region in a direction away from the bottom. The crucible includes a first wall and a second wall inside the side surface. The first wall surrounds the first region, the second wall surrounds the second region. The crucible includes a first chamber between the first wall and the side surface and a second chamber between the second wall and the side surface. The distance between horizontal opposite portions on the first wall is constant or increases as the horizontal opposite portions approach the bottom. 1. A crucible for sublimating a source material to grow a single crystal , comprising:a bottom; anda cylindrical side surface,wherein the crucible includes a third region configured to receive the source materiala second region extending from the third region in a direction away from the bottom, anda first region extending from the second region in a direction away from the bottom,the crucible includes a first wall and a second wall inside the side surface, the first wall surrounding the first region, the second wall surrounding the second region,the crucible includes a first chamber between the first wall and the side surface and a second chamber between the second wall and the side surface,a distance between horizontal opposite portions on the first wall is constant or increases as the horizontal opposite portions approach the bottom, and a distance between horizontal opposite portions on the second wall increases as the horizontal opposite portions approach the bottom,an inclination angle α of the first wall with respect to a direction perpendicular to the bottom is smaller than an inclination angle β of the second wall with ...

FURNACE FOR SEEDED SUBLIMATION OF WIDE BAND GAP CRYSTALS

An apparatus for physical vapor transport growth of semiconductor crystals having a cylindrical vacuum enclosure defining an axis of symmetry; a reaction-cell support for supporting a reaction cell inside the vacuum enclosure; a cylindrical reaction cell made of material that is transparent to RF energy and having a height Hcell defined along the axis of symmetry; an RF coil provided around exterior of the vacuum enclosure and axially centered about the axis of symmetry, wherein the RF coil is configured to generate a uniform RF field along at least the height Hcell; and, an insulation configured for generating thermal gradient inside the reaction cell along the axis of symmetry. The ratio of height of the RF induction coil, measured along the axis of symmetry, to the height Hcell may range from 2.5 to 4.0 or from 2.8 to 4.0. 1. An induction furnace apparatus for growing semiconductor crystals by seeded sublimation growth , comprising:a quartz vacuum chamber;a cylindrical RF induction coil positioned coaxially with the quartz vacuum chamber;an RF power supply coupled to the RF induction coil;a reaction cell configured for containing a seed crystal and source material, the reaction cell defining an axial length measured as the reaction cell height along its axis of rotational symmetry;an arrangement of insulation layers around the cell configured for generating a thermal gradient inside the reaction cell;a support for placing the reaction cell inside the quartz vacuum chamber;wherein the RF induction coil is configured for generating a uniform electromagnetic field around the reaction cell when the reaction cell is positioned co-axially with the induction coil, coaxially to the quartz vacuum chamber, and near or at the center of the coil with respect to its axial length; and,wherein a ratio of height of the RE induction coil, measured along the axis of rotational symmetry, to the axial length of the reaction cell is from 2.5 to 4.0.2. (canceled)3. The apparatus of ...

METHOD FOR GROWING NON-POLAR M-PLANE EPITAXIAL LAYER OF WURTZITE SEMICONDUCTORS ON SINGLE CRYSTAL OXIDE SUBSTRATES

The present invention relates to a method for growing a non-polar m-plane epitaxial layer on a single crystal oxide substrate, which comprises the following steps: providing a single crystal oxide with a perovskite structure; using a plane of the single crystal oxide as a substrate; and forming an m-plane epitaxial layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process, wherein the non-polar m-plane epitaxial layer may be GaN, or III-nitrides. The present invention also provides an epitaxial layer having an m-plane obtained according to the aforementioned method. 1. A method for growing a non-polar m-plane epitaxial layer on a single crystal oxide substrate , comprising the following steps:providing a single crystal oxide with a perovskite structure;using a plane of the single crystal oxide as a substrate; andforming a non-polar m-plane epitaxial layer of wurtzite semiconductors on the substrate by a vapor deposition process,wherein the non-polar m-plane epitaxial layer is III-nitrides.2. The method as claimed in claim 1 , further comprising the following steps:forming an oxide layer on the single crystal oxide;using a plane of the oxide layer as a substrate; andforming a non-polar m-plane epitaxial layer of wurtzite semiconductors on the substrate by a vapor deposition process,wherein, the compositions of the oxide layer and the single crystal oxide are the same or different.3. The method as claimed in claim 1 , wherein the lattice mismatch between the substrate and the non-polar m-plane epitaxial layer is 10% or less.4. The method as claimed in claim 1 , wherein the single crystal oxide is LaAlO claim 1 , SrTiO claim 1 , (La claim 1 , Sr)(Al claim 1 , Ta)O claim 1 , or an LaAlOalloy with a lattice constant difference of 10% or less compared to LaAlO.5. The method as claimed in claim 1 , wherein the III nitride is gallium nitride claim 1 , indium nitride claim 1 , aluminum nitride claim 1 , indium gallium nitride ...

System For Efficient Manufacturing Of A Plurality Of High-Quality Semiconductor Single Crystals, And Method Of Manufacturing Same

A system for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport (PVT) includes a plurality of reactors and a common vacuum channel connecting at least a pair of reactors of the plurality of reactors. Each reactor has an inner chamber adapted to accommodate a PVT growth structure for growth of a single semiconductor crystal. The common vacuum channel is connectable to a vacuum pump system for creating and/or controlling a common gas phase condition in the inner chambers of the pair of reactors.

APPARATUS AND METHODS FOR ALIGNMENT OF A SUSCEPTOR

The embodiments described herein generally relate to a stem assembly for coupling a susceptor to a process chamber. The stem assembly includes a pivot mechanism, a first flexible seal coupled to the pivot mechanism, a second flexible seal coupled to a plate on a first side of the plate, the plate having a second side coupled to the first flexible seal, a housing coupled to the second flexible seal, and a motion assembly adapted to move the housing in an X axis and a Y axis, and position the susceptor angularly relative to an X-Y plane of the process chamber. 1. A thermal processing chamber comprising:a chamber body;a susceptor positioned in the chamber body;a pivot mechanism is coupled to the chamber body;a first flexible seal coupled between the pivot mechanism and the vertical actuator;a stem coupled to the susceptor; anda motion assembly coupled to the stem outside of chamber body, the motion assembly comprising a lateral adjustment device and a tilt adjustment mechanism, both the lateral adjustment device and the tilt mechanism adapted to position a major surface of the susceptor in plane that is parallel to an X-Y plane of the chamber body and position the stem along a longitudinal axis of the chamber, wherein the pivot mechanism is configured to provide angular movement of the motion assembly relative to the chamber body.2. The chamber of claim 1 , wherein the motion assembly comprises the first flexible seal and a second flexible seal.3. The chamber of claim 2 , wherein one of the first or second flexible seals is substantially limited to movement in an X axis or a Y axis.4. The chamber of claim 2 , wherein one of the first or second flexible seals is substantially limited to movement along the longitudinal axis of the chamber.5. The chamber of claim 2 , wherein the lateral adjustment device comprises an X adjustment plate and a Y adjustment plate that are coupled to adjacent sides of a base plate disposed adjacent to one of the first or second flexible seals ...

MANUFACTURING METHOD OF SILICON CARBIDE WAFER AND SEMICONDUCTOR STRUCTURE

A manufacturing method of a silicon carbide wafer includes the following. A raw material containing carbon and silicon and a seed located above the raw material are provided in a reactor. A nitrogen content in the reactor is reduced, which includes the following. An argon gas is passed into the reactor, where a flow rate of passing the argon gas into the reactor is 1,000 sccm to 5,000 sccm, and a time of passing the argon gas into the reactor is 2 hours to 48 hours. The reactor and the raw material are heated to form a silicon carbide material on the seed. The reactor and the raw material are cooled to obtain a silicon carbide ingot. The silicon carbide ingot is cut to obtain a plurality of silicon carbide wafers. A semiconductor structure is also provided. 1. A manufacturing method of a silicon carbide wafer , comprising:providing a raw material containing carbon and silicon and a seed located above the raw material in a reactor; 'passing an argon gas into the reactor, wherein a flow rate of passing the argon gas into the reactor is 1,000 sccm to 5,000 sccm, and a time of passing the argon gas into the reactor is 2 hours to 48 hours;', 'reducing a nitrogen content in the reactor, comprisingheating the reactor and the raw material to form a silicon carbide material on the seed;cooling the reactor and the raw material to obtain a silicon carbide ingot; andcutting the silicon carbide ingot to obtain a plurality of silicon carbide wafers.2. The manufacturing method as described in claim 1 , wherein reducing the nitrogen content in the reactor comprises: before passing the argon gas into the reactor claim 1 , performing a first vacuum process on the reactor claim 1 , such that an air pressure in the reactor is 0.1 torr to 100 torr.3. The manufacturing method as described in claim 1 , wherein a resistivity of the silicon carbide ingot is 0.1 ohm/cm to 10 ohms/cm claim 1 , and a resistivity of each of the silicon carbide wafers is 0.1 ohm/cm to 10 ohms/cm.4. The ...

SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME

A silicon carbide wafer and a method of fabricating the same are provided. In the silicon carbide wafer, a ratio (V:N) of a vanadium concentration to a nitrogen concentration is in a range of 2:1 to 10:1, and a portion of the silicon carbide wafer having a resistivity greater than 10Ω·cm accounts for more than 85% of an entire wafer area of the silicon carbide wafer. 1. A silicon carbide wafer , wherein in the silicon carbide wafer , a ratio (V:N) of a vanadium concentration to a nitrogen concentration is in a range of 2:1 to 10:1 , and a portion of the silicon carbide wafer having a resistivity greater than 10Ω·cm accounts for more than 85% of an entire wafer area of the silicon carbide wafer.2. The silicon carbide wafer according to claim 1 , wherein in the silicon carbide wafer claim 1 , the nitrogen concentration is within a range of 10atom/cmto 9.9*10atom/cm claim 1 , and the vanadium concentration is within a range of 10atom/cmto 9*10atom/cm.3. The silicon carbide wafer according to claim 2 , wherein in the silicon carbide wafer claim 2 , the nitrogen concentration is within a range of 10atom/cmto 5*10atom/cm claim 2 , and the vanadium concentration is within a range of 10atom/cmto 3.5*10atom/cm.4. The silicon carbide wafer according to claim 2 , wherein in the silicon carbide wafer claim 2 , the nitrogen concentration is within a range of 5*10atom/cmto 7*10atom/cm claim 2 , and the vanadium concentration is within a range of 3.5*10atom/cmto 5*10atom/cm.5. The silicon carbide wafer according to claim 1 , wherein the ratio (V:N) of the vanadium concentration to the nitrogen concentration is in a range of 4.5:1 to 10:1 claim 1 , and the portion of the silicon carbide wafer having a resistivity greater than 10Ω·cm accounts for more than 90% of the entire wafer area of the silicon carbide wafer.6. The silicon carbide wafer according to claim 1 , wherein the ratio (V:N) of the vanadium concentration to the nitrogen concentration is in a range of 7:1 to 10:1 claim 1 ...

APPARATUS AND METHODS FOR ALIGNMENT OF A SUSCEPTOR

The embodiments described herein generally relate to a stem assembly for coupling a susceptor to a process chamber. The stem assembly includes a pivot mechanism, a first flexible seal coupled to the pivot mechanism, a second flexible seal coupled to a plate on a first side of the plate, the plate having a second side coupled to the first flexible seal, a housing coupled to the second flexible seal, and a motion assembly adapted to move the housing in an X axis and a Y axis, and position the susceptor angularly relative to an X-Y plane of the process chamber. 1. A thermal processing chamber comprising:a susceptor;a stem coupled to the susceptor; anda motion assembly coupled to the stem, the motion assembly comprising a lateral adjustment device and a tilt adjustment mechanism adapted to position a major surface of the susceptor in plane that is parallel to an X-Y plane of the chamber and position the stem along a longitudinal axis of the chamber.2. The chamber of claim 1 , wherein the motion assembly comprises at least two flexible seals.3. The chamber of claim 2 , wherein one of the at least two flexible seals is substantially limited to movement in an X axis or a Y axis.4. The chamber of claim 2 , wherein one of the at least two flexible seals is substantially limited to movement along the longitudinal axis of the chamber.5. The chamber of claim 2 , wherein the lateral adjustment device comprises an X adjustment plate and a Y adjustment plate that are coupled to adjacent sides of a base plate disposed adjacent to one of the at least two flexible seals.6. The chamber of claim 5 , wherein each of the X adjustment plate and the Y adjustment plate comprise a set screw that is coupled to a housing coupled to the stem.7. The chamber of claim 1 , wherein the motion assembly further comprises a vertical actuator having a base disposed in a plane that is substantially normal to the longitudinal axis claim 1 , and a bracket disposed in a plane that is substantially normal to ...

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

A method for manufacturing a silicon carbide single crystal sublimates a silicon carbide raw material in a growth container to grow a silicon carbide single crystal on a seed crystal substrate. The seed crystal substrate used is a substrate having a {0001} plane with an off angle of 1° or less as a surface to be placed on the growth container, and a convex-shaped end face of a grown ingot as a crystal growth surface. A diameter of the seed crystal substrate is 80% or more of an inner diameter of the growth container. Thereby, the method for manufacturing a silicon carbide single crystal enables high straight-body percentage and little formation of different polytypes even in growth with no off-angle control, i.e., the growth is directed onto a basal plane which is not inclined from a C-axis <0001>. 1 a {0001} plane with an off angle of 1° or less as a surface to be placed on the growth container; and', 'a convex-shaped end face of a grown ingot as a crystal growth surface, and, 'a substrate used as the seed crystal substrate comprisesa diameter of the seed crystal substrate is 80% or more of an inner diameter of the growth container.. A method for manufacturing a silicon carbide single crystal by sublimating a silicon carbide raw material in a growth container to grow a silicon carbide single crystal on a seed crystal substrate, wherein The present invention relates to a method for manufacturing silicon carbide in which a silicon carbide crystal is grown by a sublimation method.Recently, inverter circuits have been commonly used in electric vehicles and electric air-conditioners. This creates demands for semiconductor crystal of silicon carbide (hereinafter may also be referred to as SiC) because of the properties of less power loss and higher breakdown voltage in devices than those using semiconductor Si crystal.As a typical and practical method for growing a crystal with a high melting point or a crystal that is difficult to grow by liquid phase growth such as SiC ...

METHOD FOR PURIFYING AN INORGANIC MATERIAL USING A TUBE HAVING A BEND BETWEEN A FIRST END AND A SECOND END OF THE TUBE

Methods for purifying reaction precursors used in the synthesis of inorganic compounds and methods for synthesizing inorganic compounds from the purified precursors are provided. Also provided are methods for purifying the inorganic compounds and methods for crystallizing the inorganic compounds from a melt. γ and X-ray detectors incorporating the crystals of the inorganic compounds are also provided. 1. A method for forming a purified thallium compound , the method comprising:combining: at least one starting oxidized thallium compound or at least two solid starting inorganic precursor materials, wherein at least one of said at least two solid starting inorganic precursor materials comprises oxidized thallium; and a carbon powder in a reaction vessel;sealing the reaction vessel under vacuum;melting the at least one oxidized thallium compound or the at least two solid starting inorganic precursor materials, wherein the carbon from the carbon powder reduces the thallium oxide to form a reduced, thallium compound or a reduced, thallium-containing inorganic precursor material; andsolidifying the melt.2. The method of claim 1 , wherein the at least one starting oxidized thallium compound is combined with the carbon powder and solidifying the melt provides a solid purified thallium compound having a lower oxygen concentration than the starting oxidized thallium compound.3. The method of claim 1 , wherein the purified thallium compound is TlSI claim 1 , TlSBr claim 1 , TlSeI claim 1 , TlHgI claim 1 , TlGaSe claim 1 , TlBr claim 1 , TlAsSe claim 1 , TlAsSe claim 1 , TlInSe claim 1 , TlSnI5 claim 1 , or TlPbI.4. The method of claim 1 , wherein the at least two solid starting inorganic precursor materials are combined with the carbon powder claim 1 , the two or more inorganic precursor materials claim 1 , react to form the thallium compound in the melt claim 1 , and solidifying the melt provides a solid purified thallium compound.5. The method of claim 4 , wherein the two or ...

SiC-MONOCRYSTAL GROWTH CRUCIBLE

Provided is an SiC-monocrystal growth crucible that includes, at the interior thereof, a monocrystal installation part and a raw-material installation part, and that serves as a crucible for obtaining an SiC monocrystal by means of sublimation, wherein the gas permeability of a first wall of the crucible, which surrounds at least a portion of a first region positioned closer to the raw-material installation part relative to the monocrystal installation part, is lower than the gas permeability of a second wall of the crucible, which surrounds at least a portion of a second region positioned on the opposite side from the raw-material installation part relative to the monocrystal installation part. 1. A crucible for growing a SiC single crystal which is a crucible for obtaining a SiC single crystal by a sublimation method ,the crucible comprising, in an interior thereof:a single crystal setting section; anda raw material setting section,wherein a gas permeability of a first wall of said crucible surrounding at least a part of a first region located on said raw material setting section side with reference to said single crystal setting section is lower than a gas permeability of a second wall of said crucible surrounding at least a part of a second region located on an opposite side of said raw material setting section with reference to said single crystal setting section.2. The crucible for growing a SiC single crystal according to claim 1 , wherein a gas permeability of said first wall is 90% or less of a gas permeability of said second wall.3. The crucible for growing a SiC single crystal according to either claim 1 , wherein a part of said first wall comprises a gas shielding member.4. The crucible for growing a SiC single crystal according to claim 3 , wherein said gas shielding member is provided inside or on an outer periphery of said first wall.5. The crucible for growing a SiC single crystal according to either claim 3 , wherein said gas shielding member is any ...

DOPED RARE EARTH NITRIDE MATERIALS AND DEVICES COMPRISING SAME

Disclosed herein are magnesium-doped rare earth nitride materials, some of which are semi-insulating or insulating. Also disclosed are methods for preparing the materials. The magnesium-doped rare earth nitride materials may be useful in the fabrication of, for example, spintronics, electronic and optoelectronic devices. 1. A magnesium-doped rare earth nitride material , wherein the rare earth nitride is selected from the group consisting of lanthanum nitride (LaN) , praseodymium nitride (PrN) , neodymium nitride (NdN) , samarium nitride (SmN) , europium nitride (EuN) , gadolinium nitride (GdN) , terbium nitride (TbN) , dysprosium nitride (DyN) , holmium nitride (HoN) , erbium nitride (ErN) , thulium nitride (TmN) , ytterbium nitride (YbN) , and lutetium nitride (LuN) , and alloys of any two or more thereof.2. (canceled)3. A magnesium-doped rare earth nitride material as claimed in claim 1 , wherein the magnesium-doped rare earth nitride material has a resistivity of at least about 25 Ω.cm.4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. (canceled)12. (canceled)13. (canceled)14. (canceled)15. (canceled)16. A magnesium-doped rare earth nitride material as claimed in claim 1 , comprising about 10-10atoms/cmof magnesium.17. A magnesium-doped rare earth nitride material as claimed in claim 1 , further comprising one or more additional dopant(s).18. (canceled)19. (canceled)20. A magnesium-doped rare earth nitride material as claimed in claim 1 , wherein the magnesium-doped rare earth nitride material is ferromagnetic below about 70 K.21. A magnesium-doped rare earth nitride material as claimed in claim 1 , wherein the magnesium-doped rare earth nitride material has substantially the same XRD measurements as the undoped rare earth nitride.22. A magnesium-doped rare earth nitride material as claimed in claim 1 , wherein the magnesium-doped rare earth nitride material is a thin film.23. (canceled)24. (canceled)25. (canceled)26. ...

FABRICATION METHODS

Various fabrication method are disclosed. In one such method, at least one structure is formed on a substrate which protrudes outwardly from a plane of the substrate. A beam is used to form a layer of material, at least part of which is in direct contact with a semiconductor structure on the substrate, the semiconductor structure comprising at least one nanowire. The beam has a non-zero angle of incidence relative to the normal of the plane of the substrate such that the beam is incident on one side of the protruding structure, thereby preventing a portion of the nanowire in a shadow region adjacent the other side of the protruding structure in the plane of the substrate from being covered with the material. 1. A fabrication method comprising:forming at least one structure on a substrate which protrudes outwardly from a plane of the substrate; andusing a beam to form a layer of material, at least part of which is in direct contact with a semiconductor structure on the substrate, the semiconductor structure comprising at least one nanowire, wherein the beam has a non-zero angle of incidence relative to the normal of the plane of the substrate such that the beam is incident on one side of the protruding structure, thereby preventing a portion of the nanowire in a shadow region adjacent the other side of the protruding structure in the plane of the substrate from being covered with the material.2. The method of claim 1 , wherein the protruding structure is adjacent the nanowire claim 1 , the shadow region extending across the width of the nanowire such that a section of the nanowire is not covered by the superconductor material across its entire width claim 1 , thereby forming a junction between two further sections of the nanowire claim 1 , both of which are at least partially covered by the superconductor material.3. The method of claim 1 , wherein the protruding structure is a dielectric structure.4. The method of claim 1 , wherein the protruding dielectric ...

METHOD FOR PRODUCING SINGLE CRYSTAL

A method for producing a single crystal includes a step of placing a source material powder and a seed crystal within a crucible, and a step of growing a single crystal on the seed crystal. The crucible includes a peripheral wall part and a bottom part and a lid part that are connected to the peripheral wall part to close the openings of the peripheral wall part, the lid part having a holder that holds the seed crystal. The bottom part has a connection region connected to the peripheral wall part and a thick region that is thicker than the connection region and that surrounds a central axis passing through a center of gravity of orthogonal projection of the bottom part, the orthogonal projection being formed on a plane perpendicular to a growth direction of the single crystal, the central axis extending in the growth direction of the single crystal. 1. A method for producing a single crystal , comprising:a step of placing a source material powder and a seed crystal within a crucible; anda step of growing a single crystal on the seed crystal, a peripheral wall part being hollow and having openings at both ends,', 'a bottom part connected to the peripheral wall part to close one of the openings of the peripheral wall part, and', 'a lid part connected to the peripheral wall part to close the other one of the openings of the peripheral wall part and having a holder that holds the seed crystal,, 'wherein the crucible includes'}the bottom part has a connection region connected to the peripheral wall part and a thick region that is thicker than the connection region and that surrounds a central axis passing through a center of gravity of orthogonal projection of the bottom part, the orthogonal projection being formed on a plane perpendicular to a growth direction of the single crystal, the central axis extending in the growth direction of the single crystal,in the step of placing the source material powder and the seed crystal within the crucible, the source material ...

TUNED MATERIALS, TUNED PROPERTIES, AND TUNABLE DEVICES FROM ORDERED OXYGEN VACANCY COMPLEX OXIDES

A single-crystalline LnBMOor LnBMOcompound is provided, which includes an ordered oxygen vacancy structure; wherein Ln is a lanthanide, B is an alkali earth metal, M is a transition metal, O is oxygen, and 0≦δ≦1. Methods of making and using the compound, and devices and compositions including same are also provided. 1. A single-crystalline LnBMOor LnBMOcompound , comprising an ordered oxygen vacancy structure; whereinLn is a lanthanide,B is an alkali earth metal,M is a transition metal,O is oxygen, and0≦δ≦1.2. The compound of claim 1 , wherein Ln is La claim 1 , Pr claim 1 , Nd claim 1 , Sm claim 1 , or Gd.3. The compound of claim 1 , wherein B is Ba claim 1 , Sr claim 1 , or Ca.4. The compound of claim 1 , wherein M is Co claim 1 , Mn claim 1 , Fe claim 1 , or Ni.5. The compound of claim 1 , wherein the compound has a double perovskite structure.6. A composition claim 1 , comprising the compound of in epitaxial contact with a single-crystalline substrate.7. The composition of claim 6 , wherein the substrate comprises Nb-doped SrTiO.8. A single-crystalline LnBMOor LnBMOcompound claim 6 , δ being ≧0 and ≦1 claim 6 , produced by a process comprising:forming, on a single-crystalline substrate, a thin film comprising Ln, B, M, and O, wherein Ln is a lanthanide, B is an alkali earth metal, M is a transition metal, and O is oxygen;annealing said thin film in an oxygen-containing gas, to form an oxygen-annealed film and cooling9. The compound of claim 8 , wherein forming said thin film comprises pulsed laser desorption of a target compound comprising Ln claim 8 , B claim 8 , M claim 8 , and O.10. The compound of claim 8 , wherein annealing said thin film in an oxygen-containing gas comprises beating said thin film at 800° C. in 400 Torr oxygen for 15 minutes.11. The compound of claim 8 , wherein annealing said oxygen-annealed film comprises heating said oxygen-annealed film at 800° C. at a pressure lower than 1*10Torr for 15 minutes.12. The compound of claim 8 , wherein ...

Electron Beam Heating and Atomic Surface Restructuring of Sapphire Surface

Systems, methods, and devices of the various embodiments may provide a mechanism to enable the growth of a rhombohedral epitaxy at a lower substrate temperature by energizing the atoms in flux, thereby reducing the substrate temperature to a moderate level. In various embodiments, sufficiently energized atoms provide the essential energy needed for the rhombohedral epitaxy process which deforms the original cubic crystalline structure approximately into a rhombohedron by physically aligning the crystal structure of both materials at a lower substrate temperature. 1. A method for heating a wafer to support epitaxy film growth on the wafer , comprising:providing the wafer;heating the wafer with a radiative heating element;applying irradiation to the wafer with an electron beam until a surface of the wafer reaches a selected surface temperature for a selected duration; andgrowing the epitaxy film on the wafer after applying the irradiation.2. The method of claim 1 , wherein applying the irradiation comprises uniformly applying the irradiation.3. The method of claim 2 , wherein the selected surface temperature is from about 400° C. to about 500° C.4. The method of claim 3 , wherein the selected duration is from about 1 minute to about 2 minutes.5. The method of claim 4 , wherein the selected surface temperature is about 500° C. and the selected duration is about 2 minutes.6. The method of claim 3 , wherein the wafer comprises sapphire.7. The method of claim 6 , wherein the epitaxy film comprises SiGe claim 6 , CdTe claim 6 , or GaN.8. The method of claim 2 , further comprising rotating the wafer while applying the irradiation.9. A vacuum deposition system claim 2 , comprising:a growth chamber configured to support a wafer therein;a radiative heating element configured to heat the wafer; andan electron beam gun configured to irradiate a surface of the wafer with an electron beam until the surface reaches a selected surface temperature for a selected duration; anda ...

MANUFACTURING METHOD OF SILICON CARBIDE INGOT

A manufacturing method of a silicon carbide ingot includes the following. A raw material containing carbon and silicon and a seed located above the raw material are provided in a reactor. A first surface of the seed faces the raw material. The reactor and the raw material are heated, where part of the raw material is vaporized and transferred to the first surface of the seed and a sidewall of the seed and forms a silicon carbide material on the seed, to form a growing body containing the seed and the silicon carbide material. The growing body grows along a radial direction of the seed, and the growing body grows along a direction perpendicular to the first surface of the seed. The reactor and the raw material are cooled to obtain a silicon carbide ingot. A diameter of the silicon carbide ingot is greater than a diameter of the seed. 1. A manufacturing method of a silicon carbide ingot , comprising:providing a raw material containing carbon and silicon and a seed located above the raw material in a reactor, wherein a first surface of the seed faces the raw material;heating the reactor and the raw material, wherein part of the raw material is vaporized and transferred to the first surface of the seed and a sidewall of the seed and forms a silicon carbide material on the seed, to form a growing body containing the seed and the silicon carbide material, wherein the growing body grows along a radial direction of the seed, and the growing body grows along a direction perpendicular to the first surface of the seed; andcooling the reactor and the raw material to obtain the growing body that has completed growth, wherein the growing body that has completed growth is a silicon carbide ingot, and a diameter of the silicon carbide ingot is greater than a diameter of the seed.2. The manufacturing method as described in claim 1 , wherein the diameter of the seed is D1 claim 1 , the diameter of the silicon carbide ingot is D2 claim 1 , and D1:D2 is 1:8 to 7.5:83. The manufacturing ...

SIC SINGLE CRYSTAL(S) DOPED FROM GAS PHASE

An apparatus for sublimation growth of a doped SiC single crystal includes a growth crucible, an envelope, a heater, and a passage for introducing into the envelope from a source outside the envelope a doping gas mixture. The gas mixture includes a gaseous dopant precursor that, in response to entering a space between the growth crucible and the envelope, undergoes chemical transformation and releases into the space between the growth crucible and the envelope dopant-bearing gaseous products of transformation which penetrate the wall of the crucible, move into the crucible, and absorb on a growth interface of a growing SiC crystal thereby causing doping of the growing crystal. A sublimation growth method is also described. 1. A method of growing a doped silicon carbide (SiC) single crystal by sublimation , comprising:providing SiC source material and a SiC single crystal seed in spaced relation within a growth crucible;holding the growth crucible in an envelope, and providing passages for a gas between an exterior surface of the growth crucible and an interior surface of the envelope;heating the SiC source material to form sublimated material, establishing a temperature gradient between the SiC source material and the SiC single crystal seed, and causing the sublimated material to be transported to and precipitate on the SiC single crystal seed; andusing the passages to introduce into the envelope, from a source outside the envelope, a doping gas mixture including a gaseous dopant precursor, and heating the gaseous dopant precursor, within the passages, to a temperature between 2000° C. and 2400° C., such that the gaseous dopant precursor undergoes a chemical transformation and releases into the space between the growth crucible and the envelope dopant-bearing gaseous products which penetrate the crucible wall, move into the crucible, and absorb on a growth interface of a growing SiC crystal.2. The method of claim 1 , further comprising holding the envelope in a ...

CRYSTAL GROWTH APPARATUS

A crystal growth apparatus, comprising a crucible, a heat-insulating material which covers a circumference of the crucible, and a heating member which is located on the outside of the heat-insulating material and is configured to perform induction heating of the crucible, wherein the heat-insulating material has a movable part, wherein the movable part forms an opening in the heat-insulating material by the movement of the movable part to control an opening ratio of the opening in the heat-insulating material. 1. A crystal growth apparatus , comprisinga crucible,a heat-insulating material which covers a circumference of the crucible, anda heating member which is located on the outside of the heat-insulating material and is configured to perform induction heating of the crucible, whereinthe heat-insulating material has a movable part, wherein the movable part forms an opening in the heat-insulating material by the movement of the movable part to control an opening ratio of the opening of the heat-insulating material.2. The crystal growth apparatus according to claim 1 , wherein the movable part is configured to move symmetrically with the crucible as a center claim 1 , when the apparatus is observed in planar view from a vertical direction of a supporting surface by which the crucible is supported.3. The crystal growth apparatus according claim 1 , wherein the movable part is located below the crucible.4. The crystal growth apparatus according to claim 1 , whereinthe movable part has a first inclined surface which is inclined relative to an operating direction of the movable part, andthe opening ratio is controlled by a distance between the first inclined surface and a second inclined surface which faces the movable part of the heat-insulating material.5. The crystal growth apparatus according to claim 1 , wherein the movable part has an annular shape in plain view.6. The crystal growth apparatus according to claim 1 , whereinthe movable part is configured to move ...

METHOD FOR PRODUCING BULK SILICON CARBIDE

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material. 1. A method of forming silicon carbide , comprising: a crucible having an upper region, a lower region, and one or more vent holes,', 'a crucible cover sealing the crucible,', 'a substantially solid silicon carbide precursor contained within a source module that is positioned in the lower region of the crucible, wherein the source module is removable from the crucible,', 'a stand-alone seed module, removable from the crucible, that, when suspended in the upper region of the crucible, forms a space between the crucible cover and an entire top surface of an upper section of a seed holder of the seed module, the seed module having a plurality of vapor release openings and a silicon carbide seed disposed within the seed holder, wherein the plurality of vapor release openings are formed in the seed holder below a bottom surface of the silicon carbide seed as a plurality of holes around a center axis that is perpendicular to the bottom surface of the silicon carbide seed, and', 'a vapor release ring having one or more holes, wherein at least one of the one or more holes of the vapor release ring is aligned with at least one of the one or more vent holes of the crucible;, 'providing a sublimation furnace comprising a furnace shell, at least one heating element positioned ...

Synthesis and processing of novel phase of carbon (q-carbon)

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

METHOD FOR PRODUCING SINGLE CRYSTAL

A method for producing a single crystal includes a step of placing a source material powder and a seed crystal within a crucible; and a step of growing a single crystal on the seed crystal. The crucible includes a peripheral wall part and a bottom part and a lid part that are connected to the peripheral wall part to close the openings of the peripheral wall part. In the step of growing the single crystal on the seed crystal, the crucible is disposed on a spacer so as to form a space starting directly below an outer surface of the bottom part, and the peripheral wall part and an auxiliary heating member that is placed so as to face the outer surface of the bottom part with the space therebetween are heated by induction heating to sublime the source material powder to cause recrystallization on the seed crystal. 1. A method for producing a single crystal , comprising:a step of placing a source material powder and a seed crystal within a crucible; anda step of growing a single crystal on the seed crystal, a peripheral wall part being hollow and having openings at both ends,', 'a bottom part connected to the peripheral wall part to close one of the openings of the peripheral wall part, and', 'a lid part connected to the peripheral wall part to close the other one of the openings of the peripheral wall part and having a holder that holds the seed crystal,, 'wherein the crucible includes'}in the step of placing the source material powder and the seed crystal within the crucible, the source material powder is placed so as to be in contact with an inner surface of the bottom part and the seed crystal is placed so as to be held by the holder, andin the step of growing the single crystal on the seed crystal, the crucible is disposed on a spacer so as to form a space starting directly below an outer surface of the bottom part, and the peripheral wall part and an auxiliary heating member that is placed so as to face the outer surface of the bottom part with the space ...

Synthesis and processing of q-carbon, graphene, and diamond

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

SYNTHESIS AND PROCESSING OF NOVEL PHASE OF BORON NITRIDE (Q-BN)

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite. 1. Q-BN.2. A method comprising:melting boron nitride into an undercooled state by a laser pulse in an environment at ambient temperature and pressure; andquenching the undercooled boron nitride from the undercooled state to create Q-BN.3. The method of claim 2 , wherein the boron nitride is hexagonal boron nitride.4. The method of claim 2 , wherein the melting comprises nanosecond pulsed laser melting at ambient temperatures and atmospheric pressure in air.5. The method of claim 2 , further comprising:melting the Q-BN; andquenching the melted Q-BN to create cubic boron nitride.6. The method of claim 4 , further comprising:depositing diamond on the cubic boron nitride by pulsed laser deposition of carbon to create a cubic boron nitride and diamond heterostructure, the cubic boron nitride acting as a template for epitaxial diamond growth.7. The method of claim 2 , wherein the quenching the melted Q-BN includes quenching the melted Q-BN to create phase-pure cubic boron nitride.8. The method of claim 2 , further comprising:before the melting, depositing the boron nitride as a film on a substrate at room temperature.9. The method of claim 8 , wherein the substrate is tungsten carbide claim 8 , silicon claim 8 , sapphire claim 8 , glass claim 8 , or a polymer.10. The method of claim 2 , wherein the created cubic boron nitride is a nanodot claim 2 , microcrystal claim 2 , nanoneedle claim 2 , microneedle or large area single crystal film.11. The method of claim 9 , including using the substrate ...

DIRECT CONVERSION OF H-BN INTO C-BN AND STRUCTURES FOR A VARIETY OF APPLICATIONS

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite. 1. A process comprising:melting hexagonal boron nitride into an undercooled state by a laser pulse in an environment at ambient temperature and pressure; andquenching the undercooled hexagonal boron nitride to create cubic boron nitride.2. The process of claim 1 , wherein the quenching includes quenching the undercooled hexagonal boron nitride to phase-pure cubic boron nitride.3. The process of claim 1 , further comprising:depositing a film of the hexagonal boron nitride on a substrate and using the substrate as a template for epitaxial growth.4. The process of claim 1 , wherein the created cubic boron nitride is a nanodot claim 1 , microcrystal claim 1 , nanoneedle claim 1 , microneedle claim 1 , or large area single crystal film.5. The process of claim 3 , wherein the substrate is tungsten carbide claim 3 , silicon claim 3 , copper claim 3 , sapphire claim 3 , glass claim 3 , or a polymer.6. The process of claim 1 , the melting comprising melting the hexagonal boron nitride in an undercooled state by a laser pulse in an environment at ambient temperature and pressure.7. A process comprising:depositing a film of hexagonal boron nitride on a substrate by laser pulse deposition;melting a first portion of the hexagonal boron nitride film into an undercooled state by a first laser pulse in an environment at ambient temperature and pressure;quenching the melted first portion of the hexagonal boron nitride film from the undercooled state to create a first cubic boron nitride portion;moving the ...

METHOD AND APPARATUS FOR THE SELECTIVE DEPOSITION OF EPITAXIAL GERMANIUM STRESSOR ALLOYS

A method and apparatus for forming heterojunction stressor layers is described. A germanium precursor and a metal precursor are provided to a chamber, and an epitaxial layer of germanium-metal alloy formed on the substrate. The metal precursor is typically a metal halide, which may be provided by subliming a solid metal halide or by contacting a pure metal with a halogen gas. The precursors may be provided through a showerhead or through a side entry point, and an exhaust system coupled to the chamber may be separately heated to manage condensation of exhaust components. 1. An apparatus for forming a stressor layer on a substrate , comprising:a rotatable substrate support disposed in an enclosure;a plurality of gas inlets formed in a first wall of the enclosure;at least one gas outlet formed in a second wall of the enclosure;a reactive precursor source coupled to a gas inlet by a first conduit;a non-reactive precursor source coupled to a gas inlet by a second conduit; andan exhaust system comprising a condensation trap.2. The apparatus of claim 1 , wherein at least one gas inlet of the plurality of gas inlets is formed in the first wall of the enclosure near the rotatable substrate support.3. The apparatus of claim 1 , wherein the exhaust system further comprises jacketed piping and valves.4. The apparatus of claim 3 , wherein the exhaust system further comprises a vacuum pump and the jacketed piping ends at an inlet of the vacuum pump.5. The apparatus of claim 3 , wherein the exhaust system further comprises an adhesion reducing coating.6. The apparatus of claim 1 , wherein the reactive precursor source is coupled to a metal halide source.7. The apparatus of claim 1 , wherein the non-reactive precursor source is a germanium hydride source.8. The apparatus of claim 1 , further comprising a metal precursor contact chamber coupled with the first conduit claim 1 , wherein the contact chamber contains a bed of solid metal or metal halide crystals.9. The apparatus of ...

Conversion of boron nitride into n-type and p-type doped cubic boron nitride and structures

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

MAGNETIC MATERIAL INCLUDING a"-Fe16(NxZ1-x)2 OR A MIXTURE OF a"-Fe16Z2 AND a"-Fe16N2, WHERE Z INCLUDES AT LEAST ONE OF C, B, OR O

A magnetic material may include α″-Fe(NZ)or a mixture of α″-FeNand α″-FeZ, where Z includes at least one of C, B, or O, and x is a number greater than zero and less than one. In some examples, the magnetic material including α″-Fe(NZ)or a mixture of α″-FeNand α″-FeZmay include a relatively high magnetic saturation, such as greater than about 219 emu/gram, greater than about 242 emu/gram, or greater than about 250 emu/gram. In addition, in some examples, the magnetic material including α″-Fe(NZ)or a mixture of α″-FeNand α″-FeZmay include a relatively low coercivity. Techniques for forming the magnetic material are also described. 1. A magnetic material comprising:{'sub': 16', 'x', '1-x', '2', '8', 'x', '1-x, 'at least one of an α″-Fe(NZ)phase domain or an α′-Fe(NZ) phase domain, wherein Z includes at least one of C, B, or O, and wherein x is a number greater than zero and less than one.'}2. The magnetic material of claim 1 , wherein x is equal to about 0.5.3. The magnetic material of claim 1 , wherein x is equal to about 0.46674. The magnetic material of claim 1 , wherein Z consists of C.5. The magnetic material of claim 1 , further comprising at least one of an α″-FeNphase domain claim 1 , an α″-FeZphase domain claim 1 , a α′-Fe(N) phase domain claim 1 , or an α′-Fe(Z) phase domain.6. The magnetic material of claim 1 , comprising a saturation magnetization of at least about 219 emu/gram.7. The magnetic material of claim 1 , comprising a magnetic coercivity of less than or equal to about 10 Oerstads.8. The magnetic material of claim 1 , wherein at least about 35 volume percent of the magnetic material is the at least one of the α″-Fe(NZ)phase domain or the α′-Fe(NZ) phase domain.9. The magnetic material of claim 1 , wherein at least about 60 volume percent of the magnetic material is the at least one of the α″-Fe(NZ)phase domain or the α′-Fe(NZ) phase domain.10. The magnetic material of claim 1 , wherein the at least one of the α″-Fe(NZ)phase domain or the α′-Fe(NZ) ...

DEVICES AND METHODS FOR GROWING CRYSTALS

The present disclosure provides a device for preparing a crystal and a method for growing a crystal. The device may include a growth chamber configured to execute a crystal growth; and a temperature control system configured to heat the growth chamber to cause that a radial temperature difference in the growth chamber does not exceed a first preset range of an average temperature in the growth chamber during the crystal growth. The method may include placing a seed crystal and a source material in a growth chamber to grow a crystal; and controlling a heating component based on information of a temperature sensing component, to cause that a radial temperature difference in the growth chamber does not exceed a first preset range of an average temperature in the growth chamber during a crystal growth. 1. A device for preparing a crystal , comprising:a growth chamber configured to execute a crystal growth; anda temperature control system configured to heat the growth chamber to cause that a radial temperature difference in the growth chamber does not exceed a first preset range of an average temperature in the growth chamber during the crystal growth.26-. (canceled)7. The device of claim 1 , wherein the temperature control system causes that the radial temperature difference in the growth chamber does not exceed the first preset range of the average temperature in the growth chamber at least during a crystal growth sub-interval of the crystal growth claim 1 , wherein the crystal growth sub-interval is a first 80% time period of a crystal growth interval of the crystal growth.8. The device of claim 1 , wherein the temperature control system causes that a radial temperature gradient in the growth chamber does not exceed a preset radial temperature gradient threshold during the crystal growth.913-. (canceled)14. The device of claim 1 , wherein the temperature control system causes that an axial temperature gradient in the growth chamber maintains stable during the crystal ...

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

A method for manufacturing a silicon carbide single crystal sublimates a solid silicon carbide raw material in a growth container to grow a silicon carbide single crystal on a seed crystal substrate. The method includes: mixing a tantalum (Ta) powder with a carbon powder; attaching the mixture to the solid silicon carbide raw material in the growth container; and heating the resultant for sintering to form a tantalum carbide (TaC) coating film on a surface of the solid silicon carbide raw material. A silicon carbide single crystal is grown after or while the coating film is formed. Thereby, the method for manufacturing a silicon carbide single crystal has few carbon inclusions. 1. A method for manufacturing a silicon carbide single crystal by sublimating a solid silicon carbide raw material in a growth container to grow a silicon carbide single crystal on a seed crystal substrate , the method comprising:mixing a tantalum (Ta) powder with a carbon powder;attaching the mixture to the solid silicon carbide raw material in the growth container; andheating the resultant for sintering to form a tantalum carbide (TaC) coating film on a surface of the solid silicon carbide raw material, whereina silicon carbide single crystal is grown after or while the coating film is formed.2. The method for manufacturing a silicon carbide single crystal according to claim 1 , whereinthe growth container is made of carbon, anda mixture of a tantalum (Ta) powder and a carbon powder is further attached to an inner wall of the growth container. The present invention relates to a method for manufacturing silicon carbide in which a silicon carbide crystal is grown by a sublimation method.Recently, inverter circuits have been commonly used in electric vehicles and electric air-conditioners. This creates demands for semiconductor crystal of silicon carbide (hereinafter may also be referred to as SiC) because of the properties of less power loss and higher breakdown voltage in devices than those ...

SILICON CARBIDE INGOT MANUFACTURING METHOD AND SILICON CARBIDE INGOT MANUFACTURED THEREBY

A silicon carbide ingot manufacturing method and a silicon carbide ingot manufacturing system are provided. The silicon carbide ingot manufacturing method and the silicon carbide ingot manufacturing system may change a temperature gradient depending on the growth of an ingot by implementing a guide which has a tilted angle to an external direction from the interior of a reactor, in an operation to grow an ingot during a silicon carbide ingot manufacturing process.

Shielding member and apparatus for single crystal growth

This shielding member that is placed between a SiC source loading portion and a crystal installation portion in an apparatus for single crystal growth, wherein the device includes a crystal growth container including the SiC source loading portion which accommodates a SiC source in an inner bottom portion, and the crystal installation portion facing the SiC source loading portion, and a heating unit that is configured to heat the crystal growth container, and the device grows a single crystal of the SiC source on a crystal installed on the crystal installation portion by sublimating the SiC source from the SiC source loading portion; the shielding member includes a plurality of shielding plates, wherein each area of the plurality of shielding plates is 40% or less of a base area of the crystal growth container, and wherein, in a case where the SiC source loading portion is filled with a SiC source, a shielding ratio provided by a projection surface of the plurality of shielding plates, which is projected on an internal circle of the SiC source loading portion at SiC source surface, is 0.5 or more.

IMPURITY CONTROL DURING FORMATION OF ALUMINUM NITRIDE CRYSTALS AND THERMAL TREATMENT OF ALUMINUM NITRIDE CRYSTALS

In various embodiments, single-crystal aluminum nitride boules and substrates are formed from the vapor phase with controlled levels of impurities such as carbon. Single-crystal aluminum nitride may be heat treated via quasi-isothermal annealing and controlled cooling to improve its ultraviolet absorption coefficient and/or Urbach energy. 1104.-. (canceled)105. A light-emitting diode (LED) comprising a light-emitting device structure disposed over a single-crystal AlN substrate , configured to emit ultraviolet (UV) light at a wavelength ranging from 228 nm to 238 nm , and having an external quantum efficiency ranging from 0.02% to 0.5%.106. The LED of claim 105 , wherein the AlN substrate has an ultraviolet (UV) absorption coefficient of less than 10 cmfor an entire wavelength range of 220 nm to 280 nm.107. The LED of claim 106 , wherein the UV absorption coefficient is no less than approximately 5 cmfor the entire wavelength range of 220 nm to 280 nm.108. The LED of claim 106 , wherein the UV absorption coefficient is constant within ±2 cmfor the entire wavelength range of 220 nm to 280 nm.109. The LED of claim 105 , wherein the AlN substrate has an ultraviolet (UV) absorption coefficient of less than 30 cmfor an entire wavelength range of 210 nm to 220 nm.110. The LED of claim 109 , wherein the UV absorption coefficient is no less than approximately 5 cmfor the entire wavelength range of 210 nm to 220 nm.111. The LED of claim 105 , wherein the AlN substrate has an ultraviolet (UV) absorption coefficient of less than 8 cmfor an entire wavelength range of 240 nm to 280 nm.112. The LED of claim 111 , wherein the UV absorption coefficient is no less than approximately 5 cmfor the entire wavelength range of 240 nm to 280 nm.113. The LED of claim 105 , wherein the AlN substrate has an ultraviolet (UV) absorption coefficient of less than 20 cmfor an entire wavelength range of 215 nm to 220 nm.114. The LED of claim 113 , wherein the UV absorption coefficient is no less ...

DEVICE FOR GROWING MONOCRYSTALLINE CRYSTAL

A device for growing large-sized monocrystalline crystals, including a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region; a thermally insulating material disposed outside the crucible and below a heat dissipation component; and a plurality of heating components disposed outside the thermally insulating material to provide heat sources, wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material. 1. A device for growing monocrystalline crystals , comprising:a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region;a thermally insulating material disposed outside the crucible and below a heat dissipation component; anda plurality of heating components disposed outside the thermally insulating material to provide heat sources,wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material.2. The device of claim 1 , wherein the crucible is a graphite crucible.3. The device of claim 1 , wherein the heat dissipation inner diameter equals one of 10˜250 mm and 1%-85% of an outer diameter of an upper portion of the crucible.4. The device of claim 1 , wherein the heat dissipation height equals 5˜200 mm.5. The device of claim 1 , wherein the heat dissipation component is made of one of a porous claim 1 , thermally insulating carbon material claim 1 , a graphite claim 1 , and a graphite felt.6. The device of claim 1 , wherein the thermally insulating material is a graphite felt.7. The device of claim 1 , wherein the material source region contains the material source.8. The device of claim 1 , wherein the material source is ...

VAPOR PHASE TRANSPORT SYSTEM AND METHOD FOR DEPOSITING PEROVSKITE SEMICONDUCTORS

Vapor phase transport systems and methods of depositing perovskite films are described. In an embodiment, a deposition method includes feeding a perovskite solution or constituent powder to a vaporizer, followed by vaporization and depositing the constituent vapor as a perovskite film. In an embodiment, a deposition system and method includes vaporizing different perovskite precursors in different vaporization zones at different temperatures, followed by mixing the vaporized precursors to form a constituent vapor, and depositing the constituent vapor as a perovskite film. 1. A vapor phase transport system comprising:a vacuum chamber;a first vaporization zone coupled with the vacuum chamber;a second vaporization zone coupled with the vacuum chamber;a first precursor supply assembly coupled with an inlet to the first vaporization zone;a second precursor supply assembly coupled with an inlet to the second vaporization zone; anda substrate holder.2. The vapor phase transport system of claim 1 , wherein the second precursor supply assembly is a solid precursor supply assembly.3. The vapor phase transport system of claim 2 , wherein the solid precursor supply assembly includes a powder supply coupled with a carrier gas source to carry a powder from the powder supply to the second vaporization zone.4. The vapor phase transport system of claim 3 , further comprising a filter within the second vaporization zone or downstream from the second vaporization zone.5. The vapor phase transport system of claim 2 , wherein the first precursor supply assembly is a liquid precursor supply assembly.6. The vapor phase transport system of claim 5 , wherein the liquid precursor supply assembly includes a liquid precursor supply component coupled with a gas inflow component to supply an aerosolized solution to the first vaporization zone.7. The vapor phase transport system of claim 6 ,wherein the first vaporization zone is with in a first vaporizer that includes a tube which is completely ...

METHOD FOR PRODUCING BULK SILICON CARBIDE

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material. 1. A method of forming silicon carbide comprising the steps of a) a crucible having an upper region and a lower region;', 'b) a crucible cover sealing the crucible;', 'c) a substantially solid silicon carbide precursor positioned in the lower region of the crucible; and', 'd) a seed module positioned in the upper region of the crucible, the seed module comprising a silicon carbide seed having a top surface and a bottom surface exposed to the upper region of the crucible, the bottom surface facing the substantially solid silicon carbide precursor,, 'i) providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation, the hot zone comprising'}ii) heating the hot zone with the heating element to sublimate the substantially solid silicon carbide precursor, andiii) forming silicon carbide on the bottom surface of the silicon carbide seed.2. The method of claim 1 , wherein the substantially solid silicon carbide precursor is contained within a source module and wherein the source module is positioned in the lower region of the crucible.3. The method of claim 2 , wherein the source module comprises a precursor chamber and wherein the ...

METHOD AND APPARATUS FOR PRODUCING BULK SILICON CARBIDE USING A SILICON CARBIDE SEED

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material. 1. A method of forming silicon carbide comprising the steps of a) a crucible having an upper region and a lower region;', 'b) a crucible cover sealing the crucible;', 'c) a silicon carbide precursor positioned in the lower region of the crucible; and', 'd) a seed module positioned in the upper region of the crucible, the seed module comprising a silicon carbide seed having a top surface and a bottom surface exposed to the upper region of the crucible, the bottom surface facing the substantially solid silicon carbide precursor mixture,, 'i) providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation, the hot zone comprising'}ii) heating the hot zone with the heating element to sublimate the silicon carbide precursor; andiii) forming silicon carbide on the bottom surface of the silicon carbide seed.2. The method of claim 1 , wherein the seed module comprises a seed holder having at least one vapor release opening claim 1 , and the silicon carbide seed is positioned within the seed holder.3. The method of claim 2 , wherein the seed holder comprises a plurality of vapor release openings.4. The method of claim 3 , wherein the seed ...

METHOD AND APPARATUS FOR PRODUCING BULK SILICON CARBIDE FROM A SILICON CARBIDE PRECURSOR

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material. 1. A method of forming silicon carbide comprising the steps of a) a crucible having an upper region and a lower region;', 'b) a crucible cover sealing the crucible;', 'c) a substantially solid silicon carbide precursor mixture comprising silicon carbide positioned in the lower region of the crucible, wherein the substantially solid silicon carbide precursor mixture is prepared by heating a particulate mixture comprising silicon particles and carbon particles; and', 'd) a silicon carbide seed positioned in the upper region of the crucible, the silicon carbide seed having a top surface and a bottom surface, the bottom surface facing the substantially solid silicon carbide precursor mixture;, 'i) providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation, the hot zone comprising'}ii) heating the hot zone with the heating element to sublimate the substantially solid silicon carbide precursor mixture; andiii) forming silicon carbide on the bottom surface of the silicon carbide seed.2. The method of claim 1 , wherein the substantially solid silicon carbide precursor mixture is contained within a source module and wherein the source ...

APPARATUS FOR PRODUCING BULK SILICON CARBIDE

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material. 1. A sublimation furnace for forming silicon carbide comprising a furnace shell , at least one heating element positioned outside the furnace shell , and a hot zone positioned inside the furnace shell surrounded by insulation , the hot zone comprisinga) a crucible having an upper region and a lower region;b) a crucible cover sealing the crucible;c) a substantially solid silicon carbide precursor positioned in the lower region of the crucible; andd) a seed module positioned in the upper region of the crucible, the seed module comprising a silicon carbide seed having a top surface and a bottom surface exposed to the upper region of the crucible, the bottom surface facing the substantially solid silicon carbide precursor.2. The sublimation furnace of claim 1 , wherein the substantially solid silicon carbide precursor is contained within a source module and wherein the source module is positioned in the lower region of the crucible.3. The sublimation furnace of claim 2 , wherein the source module comprises a precursor chamber and wherein the substantially solid silicon carbide precursor is contained within the precursor chamber.4. The sublimation furnace of claim 1 , wherein the substantially solid silicon carbide precursor is porous.5. The sublimation furnace of claim 4 ...

Fabrication Method for Multi-junction Solar Cells

A fabrication method for high-efficiency multi junction solar cells, including: providing a Ge substrate for semiconductor epitaxial growth; growing an emitter region over the Ge substrate (as the base) to form a first subcell with a first band gap; forming a second subcell with a second band gap larger than the first band gap and lattice matched with the first subcell over the first subcell via MBE; forming a third subcell with a third band gap larger than the second band gap and lattice matched with the first and second subcells over the second subcell via MOCVD; and forming a fourth subcell with a fourth band gap larger than the third band gap and lattice matched with the first, second and third subcells over the third subcell via MOCVD.

METHOD AND SYSTEM FOR FABRICATION OF CRYSTALS USING LASER-ACCELERATED PARTICLE BEAMS OR SECONDARY SOURCES

A system and a method for fabricating crystals, the method comprising heating an irradiation target to a temperature comprised in a range between a boiling point temperature of a material of the irradiation target and a critical point temperature of the material of the irradiation target, thereby generating a plasma plume of particles ablated from a surface of the irradiation target. 1. A method for fabrication of crystals , comprising heating an irradiation target to a temperature comprised in a range between a boiling point temperature of a material of the irradiation target and a critical point temperature of the material of the irradiation target , thereby generating a plasma plume of particles ablated from a surface of the irradiation target.2. The method of claim 1 , wherein said heating the irradiation target comprises irradiating the irradiation target with a laser-accelerated particle beam.3. The method of claim 1 , wherein said heating the irradiation target comprises irradiating the irradiation target with a beam of one of: electrons claim 1 , neutrons and X-rays.4. The method of claim 1 , wherein said heating the irradiation target comprises irradiating the irradiation target with a laser-accelerated particle beam of intensity of at least 10W/cmand pulse duration of at most 1 ps claim 1 , under vacuum claim 1 , for at most 100 ns.5. The method of claim 1 , wherein said heating the irradiation target comprises irradiating the irradiation target with a beam from a laser-accelerated particle source and selecting at least one of: i) a distance between the source and the irradiation target; ii) a number of laser-accelerated particles per unit of irradiated surface of the irradiation target; iii) an irradiation time of the surface of the irradiation target; and iv) a driving laser's power.6. The method of claim 1 , further comprising positioning a deposition target at a distance from the irradiation target and depositing particles of the plasma plume on a ...

SHIELD MEMBER AND APPARATUS FOR GROWING SINGLE CRYSTAL EQUIPPED WITH THE SAME

A shield member and an apparatus for growing a single crystal equipped with the shield member. Such a shield member includes: a vessel for growing the single crystal; a raw material storage part positioned at a lower portion of the vessel for growing the single crystal; a substrate supporting part, positioned above the raw material storage part to support the substrate; and a heating apparatus positioned at an outer periphery of the vessel for growing the single crystal, thereby sublimating the raw material from the raw material storage part to grow the single crystal of the raw material onto the substrate, in which a plurality of permeation holes through which the raw material gas passes is formed. The shield member is configured such that the heat capacity thereof increases from the center to the outer periphery. 1. A shield member which is placed between a raw material storage part and a substrate supporting part in an apparatus for growing a single crystal and is placed apart from a raw material held in the raw material storage part ,the apparatus comprising: a vessel for growing the single crystal; a raw material storage part positioned at a lower portion of the vessel for growing a crystal; a substrate supporting part, positioned above the raw material storage part so as to be opposed to the raw material storage part to support the substrate; and a heating apparatus positioned at an outer periphery of the vessel for growing the single crystal, thereby sublimating the raw material from the raw material storage part to grow the single crystal of the raw material onto the substrate, whereinthe shield member consists of a single member,a plurality of permeation holes through which the raw material gas passes is formed, andthe shield member is configured such that the thickness of the shield member increases from the center to the outer periphery and the shield member has the heat capacity which increases from the center to the outer periphery due to the ...

CRYSTAL GROWTH APPARATUS, METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, AND SILICON CARBIDE EPITAXIAL SUBSTRATE

A crystal growth apparatus includes: a chamber including a gas inlet, a gas outlet, a welded portion, and a water-cooling portion configured to water-cool a portion at least including the welded portion; an exhaust pump connected to the gas outlet; a dew point instrument disposed between the gas outlet and the exhaust pump, the dew point instrument being configured to measure a dew point of gas passing through the gas outlet. 16-. (canceled)7: A silicon carbide single crystal substrate , whereinthe silicon carbide single crystal substrate has a diameter of not less than 100 mm,{'sup': 17', '−3, 'the silicon carbide single crystal substrate has an oxygen concentration of not more than 1×10cm,'}{'sup': 4', '−2, 'the silicon carbide single crystal substrate has a dislocation density of not more than 2×10cm, and'}the silicon carbide single crystal substrate has a stacking fault area ratio of not more than 2.0%.8: The silicon carbide single crystal substrate according to claim 7 , wherein the diameter is not less than 150 mm.9: The silicon carbide single crystal substrate according to claim 7 ,wherein the diameter is not less than 200 mm.10. (canceled) The present disclosure relates to a crystal growth apparatus, a method for manufacturing a silicon carbide single crystal, a silicon carbide single crystal substrate, and a silicon carbide epitaxial substrate.U.S. Pat. No. 7,314,520 (Patent Document 1) discloses a method for manufacturing a silicon carbide single crystal substrate having a diameter of not less than 76 mm.A crystal growth apparatus in the present disclosure includes: a chamber including a gas inlet, a gas outlet, a welded portion, and a water-cooling portion configured to water-cool a portion at least including the welded portion; an exhaust pump connected to the gas outlet; a dew point instrument disposed between the gas outlet and the exhaust pump, the dew point instrument being configured to measure a dew point of gas passing through the gas outlet.A ...

SINGLE-CRYSTALLINE METAL FILMS

According to an example of the present invention, a physical vapour deposition method comprises depositing a metal seed layer on a substrate, wherein the seed layer being deposited under a first temperature of between 20% and 90% of a melting temperature of the metal, and depositing more of the metal on the seed layer at a second temperature, lower than the first temperature, until a continuous single-crystalline film of the metal is complete and has a thickness of 10-2000 nanometres. 1. A physical vapour deposition method comprising:depositing a metal seed layer of a metal on a substrate, wherein the seed layer is deposited under a first temperature of between 20% and 90% of a melting temperature of the metal, anddepositing more of the metal on the seed layer at a second temperature lower than the first temperature, until a continuous single-crystalline film of the metal is complete, the film having a thickness of 10-2000 nanometres.2. The method according to claim 1 , wherein the seed layer is non-continuous.3. The method according to claim 2 , wherein the seed layer comprises flat islands of the metal.4. The method according to claim 1 , wherein the substrate comprises at least one of the following: silicon claim 1 , sapphire claim 1 , diamond claim 1 , magnesium oxide claim 1 , sodium chloride claim 1 , gallium arsenide claim 1 , gallium nitride claim 1 , indium arsenide claim 1 , gallium antimonide claim 1 , indium antimonide claim 1 , germanium claim 1 , cadmium-zinc-telluride or a mica substrate.5. The method according to claim 1 , further comprising annealing the continuous single-crystalline film to reduce a density of defects and to improve a film crystalline structure and surface roughness.6. The method according to claim 1 , wherein the method is performed under vacuum conditions between 1×10Torr and 1×10Torr.7. The method according to claim 1 , wherein the seed layer is deposited in Frank-van-der-Merwe growth mode.8. The method according to claim 1 , ...

n-TYPE 4H-SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING n-TYPE 4H-SiC SINGLE CRYSTAL SUBSTRATE

In an n-type 4H-SiC single crystal substrate of the present disclosure, the concentration of the element N as a donor and the concentration of the element B as an acceptor are both 3×10 18 /cm 3 or more, and a threading dislocation density is less than 4,000/cm 2 .

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

After growing a silicon carbide single crystal, silicon carbide single crystal is cooled. The step of growing silicon carbide single crystal includes a step of growing silicon carbide single crystal while maintaining the temperature of a second main surface of a base opposite to a first main surface to be lower than the temperature of a surface of silicon carbide single crystal facing a silicon carbide source material. In the step of cooling silicon carbide single crystal, silicon carbide single crystal is cooled while maintaining the temperature of second main surface of base to be not less than the temperature of surface of silicon carbide single crystal. 1. A method for manufacturing a silicon carbide single crystal comprising steps of:preparing a silicon carbide source material and a seed crystal, said silicon carbide source material being provided in an accommodation unit, said seed crystal being provided to face said silicon carbide source material, said seed crystal being fixed to a first main surface of a base;growing a silicon carbide single crystal on said seed crystal by sublimating said silicon carbide source material; andcooling said silicon carbide single crystal after the step of growing said silicon carbide single crystal,the step of growing said silicon carbide single crystal including a step of growing said silicon carbide single crystal while maintaining a temperature of a second main surface of said base opposite to said first main surface to be lower than a temperature of a surface of said silicon carbide single crystal facing said silicon carbide source material,the step of cooling said silicon carbide single crystal including a step of cooling said silicon carbide single crystal while maintaining the temperature of said second main surface of said base to be not less than the temperature of said surface of said silicon carbide single crystal.2. The method for manufacturing the silicon carbide single crystal according to claim 1 , wherein in ...

SiC SINGLE CRYSTAL MANUFACTURING APPARATUS

The present invention provides a SiC single crystal manufacturing apparatus, including a crystal growth vessel which has a source loading portion to hold a SiC source, and a lid which is provided with a seed crystal support to hold a seed crystal; an insulating material which has at least one through-hole and covers the crystal growth vessel; a heater which is configured to heat the crystal growth vessel; and a temperature measuring instrument which is configured to measure the temperature of the crystal growth vessel through the through-hole, wherein the inner wall surface of the through-hole of the insulating material is coated with a coating material which contains a heat-resistant metal carbide or a heat-resistant metal nitride. 1. A SiC single crystal manufacturing apparatus , comprising:a crystal growth vessel which has a source loading portion to hold a SiC source, and a lid which is provided with a seed crystal support to hold a seed crystal;an insulating material which has at least one through-hole and covers the crystal growth vessel;a heater which is configured to heat the crystal growth vessel; anda temperature measuring instrument which is configured to measure a temperature of the crystal growth vessel through the through-hole,wherein an inner wall surface of the through-hole of the insulating material is coated with a coating material which contains a heat-resistant metal carbide or a heat-resistant metal nitride.2. The SiC single crystal manufacturing apparatus according to claim 1 , wherein the heat-resistant metal carbide or the heat-resistant metal nitride is a carbide or a nitride of at least one metal selected from the group consisting of tantalum claim 1 , molybdenum claim 1 , hafnium claim 1 , niobium claim 1 , titanium claim 1 , zirconium claim 1 , tungsten claim 1 , and vanadium.3. The SiC single crystal manufacturing apparatus according to claim 2 , wherein the inner wall surface of the through-hole of the insulating material is coated with ...

SINGLE CRYSTAL GROWTH METHOD

The present invention provides a single crystal growth method capable of suppressing the recrystallization of the raw material gas subjected to sublimation on the surface of the raw material, and suppressing the generation of different polytypes in the crystal growing single crystal. The single crystal growth method is carried out in a crucible comprising an inner bottom for providing a raw material and a crystal mounting part facing the inner bottom. The method comprises in the following order: providing the raw material in the inner bottom; covering at least a part of a surface of the raw material with a metal carbide powder in a plan view from the crystal mounting part; and growing a single crystal disposed in the crystal mounting part by sublimating the raw material by heating. 1. A single crystal growth method , which is carried out in a crucible comprising an inner bottom for providing a raw material and a crystal mounting part facing the inner bottom ,the method comprising in the following order:providing the raw material in the inner bottom;covering at least a part of a surface of the raw material with a metal carbide powder in a plan view from the crystal mounting part; andgrowing a single crystal disposed in the crystal mounting part by sublimating the raw material by heating.2. The single crystal growth method according to claim 1 ,wherein in the covering step, an area covered with the metal carbide powder includes a central area of the surface of the raw material, andthe central area is an area of 20 area % from a center of the surface of the raw material.3. The single crystal growth method according to claim 1 ,wherein in the covering step, the metal carbide powder covers the entire surface of the raw material.4. The single crystal growth method of claim 1 ,wherein a particle diameter of the metal carbide powder is 0.1 mm or more and 2.0 mm or less.5. The single crystal growth method of claim 1 ,wherein the metal carbide powder is a tantalum carbide ...

SINGLE CRYSTAL GROWTH CRUCIBLE AND SINGLE CRYSTAL GROWTH METHOD

The present invention provides a single crystal growth crucible and a single crystal growth method which can suppress the recrystallization of the raw material gas which has been sublimated on the surface of the raw material and can suppress the generation of different polytypes in single crystal growth. The single crystal growth crucible includes an inner bottom, a crystal mounting part, and a deposition preventing member, wherein a raw material is provided in the inner bottom, the crystal mounting part faces the inner bottom, the deposition preventing member has a first surface comprising metal carbide, a first surface is disposed to face the crystal mounting part, the deposition preventing member is disposed in a central area of the inner bottom in a plan view from the crystal mounting part, and the first surface is disposed in accordance with the position of the surface of the raw material. 1. A single crystal growth crucible , comprising:an inner bottom,a crystal mounting part, anda deposition preventing member,wherein a raw material is provided in the inner bottom,the crystal mounting part faces the inner bottom,the deposition preventing member has a first surface comprising metal carbide,the first surface is disposed to face the crystal mounting part,the deposition preventing member is disposed in a central area of the inner bottom in a plan view from the crystal mounting part, andthe central area has a similar shape as a cross section of the inner bottom at a position of the surface of the raw material in a plan view from the crystal mounting part, and the central area is an area of 20 area % of a cross sectional area of the cross section from a center.2. The single crystal growth crucible according to claim 1 ,wherein the first surface on the crystal mounting part side of the deposition preventing member is in a range within 20 mm from the surface of the raw material provided in the inner bottom.3. The single crystal growth crucible according to claim 1 , ...

FABRICATION METHODS

Various fabrication methods are disclosed. In one such method, at least one structure is formed on a substrate which protrudes outwardly from a plane of the substrate. A beam is used to form a layer of material, at least part of which is in direct contact with a semiconductor structure on the substrate, the semiconductor structure comprising at least one nanowire. The beam has a non-zero angle of incidence relative to the normal of the plane of the substrate such that the beam is incident on one side of the protruding structure, thereby preventing a portion of the nanowire in a shadow region adjacent the other side of the protruding structure in the plane of the substrate from being covered with the material. 1. A method of fabricating a pattern on a substrate , the method comprising:forming a patterning structure on the substrate, the patterning structure comprising one or more shadow walls extending outwardly from a plane in which a surface of the substrate substantially lies;in a first deposition phase, selectively depositing a first layer of material on the surface of the substrate using a first beam; andin a second deposition phase, selectively depositing a second layer of material on the surface of the substrate using a second beam,wherein the first and second beams have a non-zero angle of incidence relative to an axis normal to the surface of the substrate and different azimuthal angles about said axis, such that, in the first deposition phase, the first beam is incident on one side of a shadow wall of the patterning structure whereby the shadow wall prevents deposition in a first exposed shadow region adjacent the opposite side of the shadow wall in the plane of the substrate, and, in the second deposition phase, the second beam is incident on one side of the shadow wall or another shadow wall of the patterning structure whereby that shadow wall prevents deposition in a second exposed shadow region adjacent the opposite side of that shadow wall in the plane ...

MANUFACTURING METHOD OF SiC INGOT

A manufacturing method of a SiC ingot includes a crystal growth step of growing a crystal on a principal plane having an offset angle with respect to a {0001} plane, in which, at least in a latter half growth step of the crystal growth step, after the crystal in the crystal growth step grows 7 mm or more from the principal plane, and in which, the crystal is grown by setting an acute angle, between the {0001} plane and an inclined plane which is perpendicular to a cut section cut along an offset direction and passes through both a center of a crystal growth surface and an offset downstream end portion of the crystal growth surface, to be equal to or more than an angle smaller than an offset angle by 2° and equal to or less than 8.6°. 1. A manufacturing method of a SiC ingot , comprising:a crystal growth step of growing a crystal on a principal plane having an offset angle with respect to a {0001} plane,wherein, at least in a latter half growth step of the crystal growth step, after the crystal in the crystal growth step grows 7 mm or more from the principal plane, andthe crystal is grown by setting an acute angle, between the {0001} plane and an inclined plane which is perpendicular to a cut section cut along an offset direction and passes through both a center of a crystal growth surface and an offset downstream end portion of the crystal growth surface, to be equal to or more than an angle smaller than an offset angle by 2° and equal to or less than 8.6°.2. The manufacturing method of a SiC ingot according to claim 1 ,wherein, in all crystal growth processes of the crystal growth step, the acute angle is set to be equal to or more than the angle smaller than the offset angle by 2° and equal to or less than 8.6°.3. The manufacturing method of a SiC ingot according to claim 1 ,wherein the offset angle is 4° or less.4. The manufacturing method of a SiC ingot according to claim 1 ,wherein, in the latter half growth step of the crystal growth step, an angle change in ...

METHOD FOR MANUFACTURING A SEMICONDUCTOR MATERIAL INCLUDING A SEMI-POLAR III-NITRIDE LAYER

The present invention relates to a method for manufacturing a semiconductor material including a semi-polar III-nitride layer from a semi-polar starting substrate including a plurality of grooves periodically spaced apart, each groove including a first inclined flank of crystallographic orientation C (0001) and a second inclined flank of different crystallographic orientation, the method comprising the phases consisting in: 12. Method for manufacturing a semiconductor material including a semi-polar III-nitride layer from a starting substrate including a plurality of grooves periodically spaced apart by a distance L , each groove including a first inclined flank of crystallographic orientation C (0001) and a second inclined flank of different crystallographic orientation , forming first III-nitride crystals on the first inclined flanks of the grooves, the growth parameters of the III-nitride crystals being adapted to favour lateral growth of said crystals such as to induce overlapping between adjacent III-nitride crystals and to form extended cavities in line with the overlapping areas between the first crystals in the meeting plane between the first crystals, at the intersection between two first adjacent overlapping crystals;', 'forming a two-dimensional III-nitride layer on the III-nitride crystals formed beforehand., 'the method comprising the phases consisting in22. Method according to claim 1 , which further comprises a phase (bis) consisting in forming second crystals on the first crystals claim 1 , the growth parameters of the second III-nitride crystals being adapted to favour lateral growth of said second crystals such as to induce overlapping between adjacent second III-nitride crystals and to form cavities in line with the overlapping areas of the second crystals.3. Method according to claim 1 , in which growth of the III-nitride crystals is carried out by metal organic vapour phase epitaxy MOVPE or by hydride vapour phase epitaxy HYPE claim 1 , and the ...

Axial Gradient Transport (AGT) Growth Process and Apparatus Utilizing Resistive Heating

A crucible has a first resistance heater is disposed in spaced relation above the top of the crucible and a second resistance heater with a first resistive section disposed in spaced relation beneath the bottom of the crucible and with a second resistive section disposed in spaced relation around the outside of the side of the crucible. The crucible is charged with a seed crystal at the top of an interior of the crucible and a source material in the interior of the crucible in spaced relation between the seed crystal and the bottom of the crucible. Electrical power of a sufficient extent is applied to the first and second resistance heaters to create in the interior of the crucible a temperature gradient of sufficient temperature to cause the source material to sublimate and condense on the seed crystal thereby forming a growing crystal. 1. An apparatus for axial gradient growth of silicon carbide by sublimation comprising:a crucible having a top, a bottom and a side that extends between the top of the crucible and the bottom of the crucible, said crucible adapted to support a seed crystal at the top of an interior of the crucible and a source material in the interior of the crucible in spaced relation between the seed crystal and the bottom of the crucible, the space between the source material and the bottom of the crucible defining a cavity in the interior of the crucible;a first resistance heater disposed in spaced relation above the top of the crucible; anda second resistance heater having a first section disposed in spaced relation beneath the bottom of the crucible and a second section disposed in spaced relation around the outside of the side of the crucible.2. The apparatus of claim 1 , wherein the first and second resistance heaters are operative for PVT growing on the seed crystal disposed at the top of the interior of the crucible a growth crystal having a convex growth interface claim 1 , wherein a ratio of a radius of curvature of the convex growth ...

Apparatus for fabricating ingot

Disclosed is an apparatus for fabricating an ingot. The apparatus comprises a crucible to receive a source material, and a temperature difference compensating part on the source material. The temperature difference compensating part comprises a plurality of holes.

Rhombohedron Epitaxial Growth with Molten Target Sputtering

Some aspects relate to methods of forming an epitaxial layer. In some examples, the methods include ejecting atoms from a molten metal sputtering material onto a heated crystalline substrate and growing a single epitaxial layer on the substrate from the ejected atoms, where the atoms are ejected with sufficient energy that the grown epitaxial layer has at least a partial rhombohedral lattice, and wherein the crystalline substrate is heated to a temperature of about 600 degrees Celsius or less, or about 500 degrees or less. Other aspects relate to materials, such as a material including a single epitaxial layer on top of a crystalline substrate, the layer including one or more semiconductor materials and having at least a partial rhombohedral lattice, or a substantially rhombohedral lattice. 1. A material comprising:a single epitaxial layer on top of a crystalline substrate, the layer comprising one or more semiconductor materials, wherein about 99% or more of the single epitaxial layer has a rhombohedral lattice.2. The material of claim 1 , wherein the one or more semiconductor materials are selected from the group consisting of Silicon claim 1 , Germanium claim 1 , Carbon claim 1 , and Tin.3. The material of claim 1 , wherein the crystalline substrate comprises a sapphire material.4. The material of claim 1 , wherein the crystalline substrate comprises one or more other triagonally structured crystalline materials.5. The material of claim 1 , wherein about 99% or more of the rhombohedral lattice has the same relative orientation.6. The material of claim 1 , wherein the single epitaxial layer has a thickness that is about 10 or more micrometers.7. The material of claim 6 , wherein the single epitaxial layer has a thickness that is about 100 or more micrometers.8. The material of claim 7 , wherein about 70% or more of the atoms of the single epitaxial layer are Germanium claim 7 , and substantially all of the remaining atoms are Silicon.9. The material of claim 8 , ...

LATTICE MATCHABLE ALLOY FOR SOLAR CELLS

An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, GaInNAsSbwith a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for GaInNAsSbare 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03. 1. An electron generating junction comprising a semiconductor alloy composition , wherein the semiconductor alloy composition is GaInNAsSb , wherein ,the content values for x, y, and z are within composition ranges as follows: 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03;{'sup': '2', 'the content levels are selected such that the semiconductor alloy composition exhibits a bandgap from 0.9 eV to 1.1 eV; and a short circuit current density Jsc greater than 13 mA/cmand an open circuit voltage Voc greater than 0.3 V when illuminated with a filtered 1 sun AM1.5D spectrum in which all light having an energy greater than the bandgap of GaAs is blocked.'}2. The electron generating junction of claim 1 , wherein the semiconductor alloy composition is characterized by a thickness from 1 μm to 2 μm.3. The electron generating junction of claim 1 , wherein the semiconductor alloy composition is characterized by a thickness greater than 1 μm.4. The electron generating junction of claim 1 , wherein the semiconductor alloy composition is substantially lattice matched to GaAs.5. The electron generating junction of claim 1 , wherein the semiconductor alloy composition is substantially lattice matched to Ge.6. The electron generating junction of claim 1 , wherein the semiconductor alloy composition is n-doped.7. The electron generating junction of claim 1 , wherein the semiconductor alloy composition is p-doped.8. The electron generating junction of claim 1 , wherein the semiconductor alloy ...

SOLID-STATE BATTERY AND METHODS OF FABRICATION

The present disclosure generally provides for a solid-state battery, and methods of fabricating embodiments of the solid-state battery. Embodiments of the present disclosure may include an electrode for a solid-state battery, the electrode including: a current collector region including a conductive, lithium electroactive material; and a plurality of nanowires contacting the current collector region. 1. A method of fabricating an electrode for a solid-state battery , the method comprising:forming a conductive, lithium electroactive layer on a substrate;forming a plurality of electrode nanowires on the conductive, lithium electroactive layer; andlithiating the plurality of electrode nanowires to yield a plurality of lithiated electrode nanowires.2. The method of claim 1 , wherein the forming of the conductive claim 1 , lithium electroactive layer includes:contacting the substrate with a graphene oxide media (GO);applying a voltage to the GO media;drying the GO media; andpartially extracting oxygen from the GO media to form a reduced graphene oxide (RGO).3. The method of claim 1 , further comprising forming a plurality of branch nanowires on each of the plurality of electrode nanowires.4. The method of claim 1 , wherein the forming of the plurality of electrode nanowires includes:forming a metal on the conductive, lithium electroactive layer;heating the metal; andcontacting the heated metal with a pressurized mixture including silicon to form the plurality of electrode nanowires.5. The method of claim 4 , further comprising extracting oxygen from the metal.6. The method of claim 1 , wherein the lithiating includes depositing lithium during the forming of the plurality of electrode nanowires.7. The method of claim 1 , wherein the lithiating includes contacting the plurality of electrode nanowires with an electrolyte including lithium.{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'The method of , further comprising removing the substrate, following the forming of ...

METHOD AND APPARATUS FOR PRODUCING SiC SUBSTRATE

An apparatus for producing an SiC substrate, by which an SiC substrate having a thin base substrate layer is able to be produced, while suppressing deformation or breakage, includes a main container which is capable of containing an SiC base substrate, and which produces a vapor pressure of a vapor-phase species containing elemental Si and a vapor-phase species containing elemental C within the internal space by means of heating; and a heating furnace which contains the main container and heats the main container so as to form a temperature gradient, while producing a vapor pressure of a vapor-phase species containing elemental Si within the internal space. The main container has a growth space in which a growth layer is formed on one surface of the SiC base substrate, and an etching space in which the other surface of the SiC base substrate is etched. 1. A device for manufacturing a SiC substrate comprising:a main container capable of accommodating a SiC base substrate and configured to generate vapor pressure of a gaseous species containing Si element and a gaseous species containing C element in an internal space by heating; anda heating furnace that accommodates the main container, generates vapor pressure of a gaseous species containing Si element in an internal space, and performs heating in a manner to form a temperature gradient,the main container including a growth space in which a growth layer is formed on one surface of the SiC base substrate, and an etching space in which another surface of the SiC base substrate is etched.2. The device for manufacturing a SiC substrate according to claim 1 , wherein the growth space is formed by making a portion of the main container arranged on a high temperature side of the temperature gradient face the SiC base substrate in a state where the SiC base substrate is arranged on a low temperature side of the temperature gradient.3. The device for manufacturing a SiC substrate according to claim 1 , wherein the etching ...

MBE Growth Method To Enable Temperature Stability

Methods and systems for growing thin films via molecular-beam epitaxy (MBE) on substrates are provided. The methods and systems utilize a thermally conductive backing plate including an infrared-absorbing coating (IAC) formed, for example, on one side of the thermally conductive backing plate to provide an asymmetric emissivity that absorbs infrared radiation (IR) on the side having the IRC and does not on the non-coated side of the thermally conductive backing plate (e.g., refractive metal or alloy). The asymmetric emissivity shields the thin film being deposited on a substrate from the IR during formation. 1. A molecular-beam epitaxy (MBE) system , comprising:(a) an ultra-high vacuum (UHV) chamber;(b) a heater;(c) a thermally conductive backing plate including a first surface and a second surface, wherein at least the first surface includes an infrared-absorbing coating (IAC) thereon;(d) a substrate positioned on the second surface of the thermally conductive backing plate; and(e) at least one effusion cell directed towards the substrate.2. The MBE system of claim 1 , wherein the heater emits infrared radiation.3. The MBE system of claim 2 , wherein the heater also emits radiation within wavelengths from about 400 nanometers to about 700 nanometers.4. The MBE system of claim 1 , whereinthe heater is located separately from the thermally conductive backing plate,the IAC is located proximal to the heater, andthe substrate is located distal to the heater.5. The MBE system of claim 4 , wherein the heater indirectly supplies heat to the IAC.6. The MBE system of claim 1 , wherein the system further comprises a vacuum device operatively connected to the UHV chamber.7. The MBE system of claim 1 , wherein the thermally conductive backing plate comprises a material having a thermal conductivity of at least about 20 W/m*K at 20° C.8. The MBE system of claim 1 , whereinthe thermally conductive backing plate comprises a metal or a metal alloy, andthe metal or the metal alloy ...

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

A crucible having a top surface, a bottom surface opposite to the top surface, and a tubular side surface located between the top surface and the bottom surface, a resistive heater provided outside of the crucible and made of carbon, a source material provided in the crucible, and a seed crystal provided to face the source material in the crucible are prepared. A silicon carbide single crystal is grown on the seed crystal by sublimating the source material with the resistive heater. In the step of growing a silicon carbide single crystal, a value obtained by dividing a value of a current flowing through the resistive heater by a cross-sectional area of the resistive heater perpendicular to a direction in which the current flows is maintained at 5 A/mmor less. 1. A method of manufacturing a silicon carbide single crystal , comprising steps of: a crucible having a top surface, a bottom surface opposite to said top surface, and a tubular side surface located between said top surface and said bottom surface,', 'a resistive heater provided outside of said crucible and made of carbon,', 'a source material provided in said crucible, and', 'a seed crystal provided to face said source material in said crucible; and, 'preparing'}growing a silicon carbide single crystal on said seed crystal by sublimating said source material with said resistive heater,{'sup': '2', 'in said step of growing a silicon carbide single crystal, a value obtained by dividing a value of a current flowing through said resistive heater by a cross-sectional area of said resistive heater perpendicular to a direction in which said current flows being maintained at 5 A/mmor less.'}2. The method of manufacturing a silicon carbide single crystal according to claim 1 , whereinin said step of growing a silicon carbide single crystal, a temperature of said resistive heater is maintained at 2000° C. or more and 2400° C. or less.3. The method of manufacturing a silicon carbide single crystal according to claim 1 , ...

DEVICE OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

A device of manufacturing a silicon carbide single crystal includes a crucible, a first resistive heater, a second resistive heater, and a first support portion. The crucible has a top surface, a bottom surface opposite to the top surface, and a tubular side surface located between the top surface and the bottom surface. The first resistive heater is disposed to face the bottom surface. The second resistive heater is provided to surround the side surface. The first support portion supports the crucible such that the bottom surface is separated from the first resistive heater, and the side surface is separated from the second resistive heater. The first support portion is in contact with at least one of the top surface and the side surface. 1. A device of manufacturing a silicon carbide single crystal , comprising:a crucible having a top surface, a bottom surface opposite to said top surface, and a tubular side surface located between said top surface and said bottom surface;a first resistive heater disposed to face said bottom surface;a second resistive heater provided to surround said side surface; anda support portion that supports said crucible such that said bottom surface is separated from said first resistive heater, and said side surface is separated from said second resistive heater,said support portion being in contact with at least one of said top surface and said side surface.2. The device of manufacturing a silicon carbide single crystal according to claim 1 , whereinsaid second resistive heater has a first surface located on the side close to said top surface, and a second surface located on the side close to said bottom surface, in a direction from said top surface toward said bottom surface, andsaid support portion is disposed to be in contact with said side surface and to face said first surface.3. The device of manufacturing a silicon carbide single crystal according to claim 2 , whereinsaid second surface is located between said bottom surface and ...

VAPOR PHASE TRANSPORT SYSTEM AND METHOD FOR DEPOSITING PEROVSKITE SEMICONDUCTORS

Vapor phase transport systems and methods of depositing perovskite films are described. In an embodiment, a deposition method includes feeding a perovskite solution or constituent powder to a vaporizer, followed by vaporization and depositing the constituent vapor as a perovskite film. In an embodiment, a deposition system and method includes vaporizing different perovskite precursors in different vaporization zones at different temperatures, followed by mixing the vaporized precursors to form a constituent vapor, and depositing the constituent vapor as a perovskite film. 1. A vapor phase transport system comprising:a vacuum chamber;a first vaporization zone coupled with the vacuum chamber;a second vaporization zone coupled with the vacuum chamber;a first precursor supply assembly coupled with an inlet to the first vaporization zone;a second precursor supply assembly coupled with an inlet to the second vaporization zone; anda substrate holder.2. The vapor phase transport system of claim 1 , wherein the second precursor supply assembly is a solid precursor supply assembly.3. The vapor phase transport system of claim 2 , wherein the solid precursor supply assembly includes a powder supply coupled with a carrier gas source to carry a powder from the powder supply to the second vaporization zone.4. The vapor phase transport system of claim 3 , further comprising a filter within the second vaporization zone or downstream from the second vaporization zone.5. The vapor phase transport system of claim 2 , wherein the first precursor supply assembly is a liquid precursor supply assembly.6. The vapor phase transport system of claim 5 , wherein the liquid precursor supply assembly includes a liquid precursor supply component coupled with a gas inflow component to supply an aerosolized solution to the first vaporization zone.7. The vapor phase transport system of claim 6 ,wherein the first vaporization zone is with in a first vaporizer that includes a tube which is completely ...

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SUBSTRATE

A method for manufacturing a silicon carbide single crystal includes the steps of: preparing a supporting member having a bond portion and a stepped portion, the stepped portion being disposed at at least a portion of a circumferential edge of the bond portion; and disposing a buffer material on the stepped portion. The bond portion and the buffer material constitutes a supporting surface. Furthermore, this manufacturing method includes the steps of: disposing a seed crystal on the supporting surface and bonding the bond portion and the seed crystal to each other; and growing a single crystal on the seed crystal. 1. A method for manufacturing a silicon carbide single crystal , the method comprising the steps of:preparing a supporting member having a bond portion and a stepped portion, the stepped portion being disposed at at least a portion of a circumferential edge of the bond portion;disposing a buffer material on the stepped portion, the bond portion and the buffer material constituting a supporting surface;disposing a seed crystal on the supporting surface and bonding the bond portion and the seed crystal to each other; andgrowing a single crystal on the seed crystal.2. The method for manufacturing the silicon carbide single crystal according to claim 1 , whereinthe supporting surface has a circular planar shape, and{'sub': 1', '1, 'if it is assumed that the supporting surface has a diameter d, the stepped portion is located outside a central region that includes a central point of the supporting surface and that has a diameter of not less than 0.5d.'}3. The method for manufacturing the silicon carbide single crystal according to claim 1 , wherein in the step of disposing the buffer material claim 1 , the buffer material is disposed in axial symmetry to a center axis of the supporting member.4. The method for manufacturing the silicon carbide single crystal according to claim 1 , wherein in the step of disposing the buffer material claim 1 , the buffer material ...

Direct Growth of Graphene by Molecular Beam Epitaxy for the Formation of Graphene Heterostructures

Growth of single- and few-layer macroscopically continuous graphene films on CoO(111) by molecular beam epitaxy (MBE) has been characterized using low energy electron diffraction (LEED), Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS). MBE of Co on sapphire(0001) at 750 K followed by annealing in UHV (1000 K) results in ˜3 monolayers (ML) of CoO(111) due to O segregation from the bulk. Subsequent MBE of C at 1000 K from a graphite source yields a graphene LEED pattern incommensurate with that of the oxide, indicating graphene electronically decoupled from the oxide, as well as a spC(KVV) Auger lineshape, and π→π* C(1s) XPS satellite. The data strongly suggest the ability to grow graphene on other structurally similar magnetic/magnetoelecric oxides, such as CrO(111)/Si for spintronic applications. 1. A composition of matter comprising a substrate , a metal oxide formed on said substrate , and up to ten ML graphene formed on said metal oxide.2. The composition of matter of claim 1 , wherein said metal oxide is selected from the group consisting of cobalt oxide claim 1 , chromium oxide claim 1 , magnesium oxide and nickel oxide.3. The composition of matter of claim 1 , wherein said substrate is an insulating substrate.4. The composition of matter of claim 3 , wherein said substrate is comprised of AlOor SiO.5. The composition of matter of claim 1 , wherein said substrate is semiconductive.6. The composition of matter of claim 5 , wherein said substrate comprises silicon.7. A semiconductor logic device claim 5 , comprising a substrate claim 5 , a metal oxide formed on said substrate and up to ten ML graphene formed on said metal oxide.8. A spintronic device claim 5 , comprising a substrate claim 5 , a metal oxide formed on said substrate and up to ten ML graphene formed on said metal oxide.9. The composition of matter of claim 1 , wherein said graphene monolayers are continuous claim 1 , well ordered and in registry with each other.10. The ...

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

A method for manufacturing a silicon carbide single crystal includes: packing a silicon carbide source material into a crucible, the silicon carbide source material having a flowability index of not less than 70 and not more than 100; and sublimating the silicon carbide source material by heating the silicon carbide source material. 1. A method for manufacturing a silicon carbide single crystal , the method comprising:packing a silicon carbide source material into a crucible, the silicon carbide source material having a Carr's flowability index of not less than 70 and not more than 100; andsublimating the silicon carbide source material by heating the silicon carbide source material,a seed crystal having a diameter of not less than 150 mm being used.2. The method for manufacturing the silicon carbide single crystal according to claim 1 , wherein the flowability index of the silicon carbide source material is not less than 80 and not more than 100.3. The method for manufacturing the silicon carbide single crystal according to claim 1 , wherein the flowability index of the silicon carbide source material is not less than 90 and not more than 100.4. A method for manufacturing a silicon carbide single crystal claim 1 , the method comprising:packing a silicon carbide source material into a crucible, the silicon carbide source material having a Carr's flowability index of not less than 90 and not more than 100; andsublimating the silicon carbide source material by heating the silicon carbide source material,a seed crystal having a diameter of not less than 150 mm being used. The present disclosure relates to a method for manufacturing a silicon carbide single crystal.Japanese National Patent Publication No. 2012-510951 (Patent Document 1) discloses a method for manufacturing a silicon carbide single crystal through a sublimation method.PTD 1: Japanese National Patent Publication No. 2012-510951An object of the present disclosure is to provide a silicon carbide single ...

SIC SINGLE CRYSTAL PRODUCTION APPARATUS

The invention provides a SiC single crystal production apparatus with high uniformity of temperature distribution in a crystal growth vessel. The SiC single crystal production apparatus includes a crystal growth vessel containing SiC raw material; an insulation part covering the periphery of the crystal growth vessel; a heater used to heat the crystal growth vessel; and a holding member used to hold the crystal growth vessel, wherein the crystal growth vessel is held in a suspended state by the holding member.

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

A device for manufacturing a silicon carbide single crystal is prepared. The device includes a first resistive heater, a heat insulator, and a chamber. The heat insulator is provided with a first opening in a position facing the first resistive heater. The chamber is provided with a second opening in communication with the first opening. The first resistive heater has a first slit extending from an upper end surface toward a lower end surface of the first resistive heater and a second slit extending from the lower end surface toward the upper end surface, the first and second slits being alternately arranged along a circumferential direction, and the first resistive heater is provided with a third opening penetrating the first resistive heater and being in communication with the first and second openings. 1. A method of manufacturing a silicon carbide single crystal , comprising the step of preparing a device for manufacturing a silicon carbide single crystal ,said device including a first resistive heater which is an annular body in which a crucible can be disposed, a heat insulator disposed to surround the circumference of said first resistive heater, and a chamber that accommodates said first resistive heater and said heat insulator, said heat insulator being provided with a first opening in a position facing said first resistive heater, said chamber being provided with a second opening in communication with said first opening, said first resistive heater having a first slit extending from an upper end surface toward a lower end surface of said annular body and a second slit extending from said lower end surface toward said upper end surface, said first and second slits being alternately arranged along a circumferential direction, said first resistive heater being provided with a third opening penetrating said annular body and being in communication with said first and second openings,said device further including a first pyrometer disposed outside said chamber, ...

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

A method of manufacturing a silicon carbide single crystal includes steps of preparing a crucible, a source material disposed toward a bottom surface in the crucible, a seed crystal disposed to face the source material toward a top surface in the crucible, a resistive heater, and a heat insulator configured to be able to accommodate the crucible therein, measuring a mass of at least a portion of the heat insulator, comparing a measured value of the mass obtained in the measuring step with a threshold value, and growing a silicon carbide single crystal on the seed crystal by sublimation of the source material by heating the crucible placed in the heat insulator with the resistive heater. When the measured value of the mass is lower than the threshold value in the comparing step, the step of growing a silicon carbide single crystal is performed at least one or more times. 1. A method of manufacturing a silicon carbide single crystal , comprising steps of: a crucible having a top surface, a bottom surface opposite to said top surface, and a tubular side surface located between said top surface and said bottom surface,', 'a source material disposed toward said bottom surface in said crucible,', 'a seed crystal disposed to face said source material toward said top surface in said crucible,', 'a heater for heating said crucible, and', 'a heat insulator configured to be able to accommodate said crucible therein;, 'preparing'}measuring a mass of at least a portion of said heat insulator;comparing a measured value of said mass obtained in said measuring step with a threshold value; andgrowing a silicon carbide single crystal on said seed crystal by sublimation of said source material by heating said crucible placed in said heat insulator with said heater,when said measured value of said mass is lower than said threshold value in said comparing step, said step of growing a silicon carbide single crystal being performed at least one or more times.2. The method of manufacturing ...

Sic crystal and wafer cut from crystal with low dislocation density

A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crystal on a periphery of top and bottom surfaces of the seed crystal, and where the graphite container does not contact a side surface of the seed crystal; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the graphite container in a furnace; heating the furnace; evacuating the furnace; filling the furnace with an inert gas; and maintaining the furnace to support crystal growth to thereby form the SiC crystal.

Fabrication Method for Growing Single Crystal of Multi-Type Compound

A fabricating method for growing a single crystal of a multi-type compound comprises steps of: (a) providing a seed crystal at a deposition region; (b) providing a powder material at a high purity source region; and (c) undertaking a vacuum process, a heating process, a growing process, a cooling process to prepare the singe crystal, wherein a heating source is used to move to control a temperature gradient within a gas temperature control region to form a temperature gradient motion so that the temperature gradient presents a variation. By reducing the possibility of other deficiencies being continuously induced in the following crystal growth process owing to the local slime occurring at the rear side of the seed crystal from the void deficiencies at the rear side of the original seed crystal may be excluded, but also the possibility of other multi-type bodies being induced by the above vacancies.

SIC CRYSTAL AND WAFER CUT FROM CRYSTAL WITH LOW DISLOCATION DENSITY

A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crystal on a periphery of top and bottom surfaces of the seed crystal, and where the graphite container does not contact a side surface of the seed crystal; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the graphite container in a furnace; heating the furnace; evacuating the furnace; filling the furnace with an inert gas; and maintaining the furnace to support crystal growth to thereby form the SiC crystal. 1. A graphite container for use in a furnace for performing SiC crystal growth on a disk-shaped seed having a known diameter , comprising:a graphite cylindrical container having a sidewall and an open top configured for accepting a graphite lid;a cylindrical shelf formed on an upper part of the sidewall and having an interior diameter slightly smaller than the diameter of the seed, the cylindrical shelf being formed at a defined distance below the open top, thereby enabling placing and supporting the seed thereupon;a graphite lid configured for forming a closure with the open top.2. The graphite container of claim 1 , wherein the cylindrical shelf is formed integrally with the sidewall.3. The graphite container of claim 1 , wherein the cylindrical shelf is formed as a ring of graphite bonded to the sidewall.4. The graphite container of claim 1 , further comprising means for preventing the seed from contacting the lid.5. The graphite container of claim 1 , further comprising at least one cushion ring having a diameter slightly smaller than the diameter of the seed and configured for placement below or above the seed.6. The graphite container of claim 5 , wherein the at least one cushion ring comprises molybdenum or graphite.7. The graphite ...

VAPOUR-PHASE EPITAXIAL GROWTH METHOD, AND METHOD FOR PRODUCING SUBSTRATE EQUIPPED WITH EPITAXIAL LAYER

In a state in which a SiC container () of a material including polycrystalline SiC is housed in a TaC container () of a material including TaC and in which an underlying substrate () is housed in the SiC container (), the TaC container () is heated in an environment where a temperature gradient occurs in such a manner that inside of the TaC container () is at a Si vapor pressure. Consequently, C atoms sublimated by etching of the inner surface of the SiC container () are bonded to Si atoms in an atmosphere so that an epitaxial layer () of single crystalline 3C-SiC thereby grows on the underlying substrate (). 1. A vapor-phase epitaxial growth method for performing an epitaxial layer growth step , whereinin a state in which a SiC container of a material including polycrystalline SiC is housed in a TaC container of a material including TaC and in which an underlying substrate is housed in the SiC container,the TaC container is heated with a temperature gradient such that inside of the TaC container is at a Si vapor pressure, andC atoms sublimated by etching of an inner surface of the SiC container are bonded to Si atoms in an atmosphere, thereby causing an epitaxial layer of single crystalline SiC to grow on the underlying substrate.2. The vapor-phase epitaxial growth method according to claim 1 , wherein a material for the underlying substrate is an Al compound or a N compound.3. The vapor-phase epitaxial growth method according to claim 1 , whereina material for the underlying substrate is SiC.4. The vapor-phase epitaxial growth method according to claim 1 , whereinin the epitaxial layer growth step, the temperature gradient is 2° C./mm or less.5. The vapor-phase epitaxial growth method according to claim 1 , whereinin the epitaxial layer growth step, the underlying substrate comprises a plurality of underlying substrates, andthe plurality of underlying substrates are placed in the SIC container so that the epitaxial layer grows on each of the underlying substrates. ...

SiC SUBSTRATE AND SiC SINGLE CRYSTAL MANUFACTURING METHOD

A SiC substrate contains tantalum or niobium of which the content is equal to or more than 3×10cmand equal to or less than 1×10cm, and nitrogen of which the content is equal to or more than 1×10cm and equal to or less than 1×10cm. 1. A SiC substrate comprising:{'sup': 14', '−3', '15', '−3, 'tantalum or niobium of which a content is equal to or more than 3×10cmand equal to or less than 1×10cm; and'}{'sup': 16', '−3', '20', '−3, 'nitrogen of which a content is equal to or more than 1×10cmand equal to or less than 1×10cm.'}2. The SiC substrate according to claim 1 , wherein{'sup': 16', '−3, 'a content of aluminum is less than 1×10cm.'}3. The SiC substrate according to claim 1 , wherein{'sup': 16', '−3, 'a content of boron is less than 1×10cm.'}4. The SiC substrate according to claim 1 , wherein{'sup': 14', '−3, 'a content of a heavy metal element is less than 1×10cm.'}5. The SiC substrate according to claim 1 , whereincontent ratio of tantalum or niobium differ between those on a first surface and a second surface perpendicular to a thickness direction.6. The SiC substrate according to claim 1 , further comprising:a first surface and a second surface perpendicular to a thickness direction,wherein a content ratio of tantalum or niobium decreases toward the second surface from the first surface.7. A SiC single crystal manufacturing method using a sublimation method in which a single crystal is grown by recrystallizing a gas sublimated from a raw material on a surface of a seed crystal claim 1 , whereinthe raw material contains tantalum or niobium.8. The SiC single crystal manufacturing method according to claim 7 , whereina concentration of tantalum or niobium in the raw material is substantially constant.9. The SiC single crystal manufacturing method according to claim 7 , whereina concentration of tantalum or niobium on a surface of the raw material which faces the seed crystal is lower than a concentration of tantalum or niobium inside the raw material.10. The SiC ...

FILM FORMATION METHOD, VACUUM PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD OF MANUFACTURING SEMICONDUCTOR ELECTRONIC ELEMENT, SEMICONDUCTOR ELECTRONIC ELEMENT, AND ILLUMINATING APPARATUS

The present invention provides a film formation method and a film formation apparatus which can fabricate an epitaxial film with +c polarity by a sputtering method. In one embodiment of the present invention, the film formation method of epitaxially growing a semiconductor thin film with a wurtzite structure by the sputtering method on an epitaxial growth substrate heated to a predetermined temperature by a heater includes the following steps. First, the substrate is disposed on a substrate holding portion including the heater to be located at a predetermined distance away from the heater. Then, the epitaxial film of the semiconductor film with the wurtzite structure is formed on the substrate with the impedance of the substrate holding portion being adjusted. 1. A film formation method of forming an epitaxial film of a semiconductor thin film with a wurtzite structure on a substrate by a sputtering method using a vacuum processing apparatus , the vacuum processing apparatus including:a vacuum chamber capable of being vacuumed;a substrate holding portion which supports the substrate in the vacuum chamber;a heater capable of heating the substrate held by the substrate holding portion to a given temperature;a target electrode which is provided in the vacuum chamber and to which a target is attachable;a radio-frequency power supply which inputs radio-frequency power into the target via the target electrode;an electrode portion which is disposed around the substrate held by the substrate holding portion and which forms part of a return route through which the radio-frequency power inputted from the radio-frequency power supply returns to a ground; andan impedance adjuster which adjusts impedance of the electrode portion, the film formation method comprising:a substrate transporting step of causing the substrate holding portion to hold the substrate at a predetermined distance away from a substrate facing surface of the heater;a film formation step of forming the ...

Rhombohedron Epitaxial Growth with Molten Target Sputtering

Some aspects relate to methods of forming an epitaxial layer. In some examples, the methods include ejecting atoms from a molten metal sputtering material onto a heated crystalline substrate and growing a single epitaxial layer on the substrate from the ejected atoms, where the atoms are ejected with sufficient energy that the grown epitaxial layer has at least a partial rhombohedral lattice, and wherein the crystalline substrate is heated to a temperature of about 600 degrees Celsius or less, or about 500 degrees or less. Other aspects relate to materials, such as a material including a single epitaxial layer on top of a crystalline substrate, the layer including one or more semiconductor materials and having at least a partial rhombohedral lattice, or a substantially rhombohedral lattice. 1. A method comprising:ejecting atoms from a molten metal sputtering material onto a heated crystalline substrate; andgrowing a single epitaxial layer of the ejected atoms on the substrate;wherein the atoms are ejected with sufficient energy such that the formation of epitaxial layer has at least a partially rhombohedral lattice, and wherein the crystalline substrate is heated to a temperature of about 600 degrees Celsius or less.2. The method of claim 1 , wherein the crystalline substrate is heated to a temperature of about 500 degrees Celsius or less.3. The method of claim 1 , wherein about 99% or more of the single epitaxial layer has a rhombohedral lattice.4. The method of claim 1 , wherein the single epitaxial layer has a thickness that is about 10 or more micrometers.5. The method of claim 4 , wherein the single epitaxial layer has a thickness that is about 100 or more micrometers.6. The method of claim 1 , wherein the ejected atoms include one or more of Silicon claim 1 , Germanium claim 1 , Carbon claim 1 , and Tin claim 1 , and wherein the crystalline substrate comprises a sapphire material or one or more other triagonally structured crystalline materials.7. The method ...

Method for Formation of a Transition Metal Dichalcogenide (TMDC) Material Layer

A method for formation of a transition metal dichalcogenide (TMDC) material layer on a substrate arranged in a process chamber of a molecular beam epitaxy tool is provided. The method includes evaporating metal from a solid metal source, forming a chalcogen-including gas-plasma, and introducing the evaporated metal and the chalcogen-including gas-plasma into the process chamber thereby forming a TMDC material layer on the substrate. 1. A method for formation of a transition metal dichalcogenide (TMDC) material layer on a substrate arranged in a process chamber of a molecular beam epitaxy tool , the method comprising:evaporating metal from a solid metal source;forming a chalcogen-including gas-plasma; andintroducing the evaporated metal and the chalcogen-including gas-plasma into the process chamber thereby forming the TMDC material layer on the substrate.2. The method according to claim 1 , wherein a pressure in the process chamber during formation of the TMDC material layer lies within a range of 1×10to 1×10Torr.3. The method according to claim 1 , further comprising heating the substrate with a heating element having a temperature in a range of 20 to 650° C. during formation of the TMDC material layer.4. The method according to claim 1 , wherein the substrate is rotated during formation of the TMDC material layer.5. The method according to claim 1 , wherein the TMDC material layer is formed as a crystalline layer comprising one or more monolayers of the TMDC material.6. The method according to claim 5 , wherein the crystalline layer is a mono-crystalline layer.7. The method according to claim 1 , wherein the chalcogen-including gas-plasma is formed by introducing a chalcogen-including gas in a cavity and applying an electromagnetic field to the chalcogen-including gas in the cavity.8. The method according to claim 7 , wherein the electromagnetic field is applied with a power exceeding 300 W.9. The method according to claim 7 , wherein the forming of the chalcogen- ...

Method for forming magnesium oxide thin film and processed plate

A method for depositing a magnesium oxide thin film on a substrate by a laser abrasion method using a sintered body or single crystal of magnesium oxide as a target. In this method, a flat processed film made of magnesium oxide having a (111) plane as its front surface is prepared, using a substrate made of strontium titanate having a (111) plane as its principal surface or yttria-stabilized zirconia having a (111) plane as its principal surface, by directly depositing a film on the principal surface of the substrate and epitaxially growing the film.

THERMAL CONTROL FOR FORMATION AND PROCESSING OF ALUMINUM NITRIDE

In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication. 1. A method of forming single-crystal aluminum nitride (AlN) , the method comprising:providing a bulk polycrystalline AlN ceramic;disposing at least a portion of the AlN ceramic into a first crucible; (i) heating the at least a portion of the AlN ceramic at a first temperature ranging from 1100° C. to 1900° C. for a first time ranging from 2 hours to 25 hours, and (ii) thereafter, heating the at least a portion of the AlN ceramic at a second temperature ranging from 1900° C. to 2250° C. for a second time ranging from 3 hours to 15 hours, or', '(i) heating the at least a portion of the AlN ceramic during a temperature ramp to a third temperature ranging from 1900° C. to 2250° C. over a third time ranging from 5 hours to 25 hours, and (ii) thereafter, heating the at least a portion of the AlN ceramic at a fourth temperature ranging from 1900° C. to 2250° C. for a fourth time ranging from 3 hours to 25 hours;, 'annealing and densifying the at least a portion of the AlN ceramic in the first crucible, thereby forming a polycrystalline AlN source, the annealing and densifying comprisingcooling the AlN source to approximately room temperature;disposing within a furnace a second crucible containing the AlN source and a seed crystal comprising single-crystal AlN;heating the second crucible with the furnace to a growth temperature of at least 2000° C.;maintaining the second crucible at the growth temperature for a soak time ranging from 1 hour to 10 hours;after the soak time, while the second crucible is at the growth temperature, (i) condensing vapor comprising aluminum and nitrogen on the seed crystal, thereby forming a single-crystalline AlN boule extending from the seed ...

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

Quality of a silicon carbide single crystal is improved. A crucible having first and second sides is prepared. A solid source material for growing silicon carbide with a sublimation method is arranged on the first side. A seed crystal made of silicon carbide is arranged on the second side. The crucible is arranged in a heat insulating container. The heat insulating container has an opening facing the second side. The crucible is heated such that the solid source material sublimes. A temperature on the second side is measured through the opening in the heat insulating container. The opening has a tapered inner surface narrowed toward the outside of the heat insulating container. 19-. (canceled)10. A silicon carbide single crystal substrate , comprising a main surface in a shape encompassing a circle having a diameter of 100 mm , angle distribution in a direction obtained by projecting a c axis on said main surface being within 1°.111. The silicon carbide single crystal substrate according to claim , whereinsaid main surface has an off angle greater than 1° with respect to a {0001} plane. 1. Field of the InventionThe present invention relates to a method of manufacturing a silicon carbide single crystal and a silicon carbide single crystal substrate.2. Description of the Background ArtUse of silicon carbide (SiC) as a semiconductor material has actively been studied in recent years. Wide band gap of SiC can contribute to enhancement of performance of a semiconductor device. In manufacturing an SiC semiconductor, normally, an SiC substrate is required. An SIC substrate (wafer) can he formed by slicing an SiC single crystal (ingot).Japanese Patent Laying-Open No. 2001-294499 (Patent Document 1) discloses a silicon carbide single crystal wafer having a diameter not smaller than 50 mm and used for a substrate for growing an epitaxial thin film. According to this publication, deviation in orientation of a growth surface between any two points in a wafer plane can be not ...

Method of manufacturing silicon carbide substrate

A method of manufacturing a silicon carbide substrate has the following steps. A silicon carbide source material is partially sublimated. After partially sublimating the silicon carbide source material, a seed substrate having a main surface is placed in a growth container. By sublimating the remainder of the silicon carbide source material in the growth container, a silicon carbide crystal grows on the main surface of the seed substrate. In this way, an increase of dislocations in the main surface of the seed substrate can be suppressed, thereby providing a method of manufacturing a silicon carbide substrate having few dislocations.

Substrate for epitaxial growth, and crystal laminate structure

Provided is a substrate for epitaxial growth, which enables the improvement in quality of a Ga-containing oxide layer that is formed on a β-Ga 2 O 3 single-crystal substrate. A substrate ( 1 ) for epitaxial growth comprises β-Ga 2 O 3 single crystals, wherein face (010) of the single crystals or a face that is inclined at an angle equal to or smaller than 37.5° with respect to the face (010) is the major face. A crystal laminate structure ( 2 ) comprises: the substrate ( 1 ) for epitaxial growth; and epitaxial crystals ( 20 ) which are formed on the major face ( 10 ) of the substrate ( 1 ) for epitaxial growth and each of which comprises a Ga-containing oxide.

WAFER TEMPERATURE GRADIENT CONTROL TO SUPPRESS SLIP FORMATION IN HIGH-TEMPERATURE EPITAXIAL FILM GROWTH

A method of operating a reactor system to provide wafer temperature gradient control is provided. The method includes operating a center temperature sensor, a middle temperature sensor, and an edge temperature sensor to sense a temperature of a center zone of a wafer on a susceptor in reaction chamber of the reactor system, to sense a temperature of a middle zone of the wafer, and to sense a temperature of an edge zone of the wafer. The temperatures of the center, middle, and edge zones of the wafer are processed with a controller to generate control signals based on a predefined temperature gradient for the wafer. First, second, and third sets of heater lamps are operated based on the temperature of the center, middle, and edge zones to heat the center, the middle, and the edge zone of the wafer. Reactor systems are also described. 1. A method of operating a reactor system to provide wafer temperature gradient control , comprising:operating a center temperature sensor, a middle temperature sensor, and an edge temperature sensor to sense a temperature of a center zone of a wafer on a susceptor in reaction chamber of the reactor system, to sense a temperature of a middle zone of the wafer, and to sense a temperature of an edge zone of the wafer;with a controller, processing the temperatures of the center, middle, and edge zones of the wafer to generate control signals based on a predefined temperature gradient for the wafer; andoperating, based on the control signals, a first set of heater lamps based on the temperature of the center zone to heat the center zone of the wafer, a second set of heater lamps based on the temperature of the middle zone to heat the middle zone of the wafer, and a third set of heater lamps based on the temperature of the edge zone to heat the edge zone of the wafer.2. The method of claim 1 , wherein the center claim 1 , middle claim 1 , and edge temperature sensors each comprise a pyrometer receiving electromagnetic radiation from ...

LARGE DIAMETER SILICON CARBIDE SINGLE CRYSTALS AND APPARATUS AND METHOD OF MANUFACTURE THEREOF

In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed. 1. A Physical Vapor Transport (PVT) growth apparatus for PVT growing an SiC single crystal comprising:a growth chamber;a growth crucible positioned in the growth chamber, the growth crucible configured to be charged with a SiC source material at a bottom of the growth crucible and a single crystal SiC seed at a top or lid of the growth crucible with the SiC source material and the single crystal SiC seed in spaced relation;thermal insulation surrounding the growth crucible inside of the growth chamber, the thermal insulation including a side insulation piece between a side of the growth crucible and a side of the growth chamber, a bottom insulation piece between the bottom of the growth crucible and a bottom of the growth chamber, a top insulation piece between the top of the growth crucible and a top of the growth chamber, and an insulation insert positioned in an opening in the top insulation piece, wherein the insulation insert has a thickness between 20 mm and 50 mm and a largest dimension between 90% and 120% of a largest dimension of the single crystal SiC seed; anda heater positioned between the bottom of the growth crucible and the bottom insulation piece, wherein a geometry of the insulation insert is tuned to control ...

METHODS OF PRODUCING LARGE GRAIN OR SINGLE CRYSTAL FILMS

Highly textured [111] oriented films such as MgO crystalline films are deposited by e-beam evaporation on ordinary soda-lime glass. Semiconductor films such as silicon can be deposited on these MgO films using eutectics at temperatures below the softening point of ordinary glass and having extremely high textured and strong [111] orientation. The invention may be used for efficient and cost effective solar cells, displays, etc. 1. Method of growing crystalline , oriented films comprising:positioning a substrate in a vacuum system of an electron beam evaporation system;holding the system at a constant temperature thereby controlling growth kinetics;positioning an evaporation source a distance between 5 and 10 inches from said substrate;holding the system at a base pressure and an oxygen pressure;coating a film from the evaporation source on the substrate; andcooling the film coated substrate.2. The method of claim 1 , wherein the base pressure is better than 1×10Torr.3. The method of claim 1 , wherein the oxygen pressure is better than 10Torr.4. The method of claim 1 , further comprising monitoring a deposition rate of the evaporation source using a quartz crystal thickness monitor.5. The method of claim 1 , wherein the base pressure is better than 1×10Torr6. The method of claim 1 , wherein the evaporation source is MgO crystals.7. The method of claim 1 , wherein the film is cooled to 30° C./min.8. The method of claim 1 , wherein the substrate is soda-lime glass.9. The method of claim 1 , wherein the constant temperature is between 300° C. and 600° C. This application claims priority to U.S. Provisional Patent Application Ser. No. 61/879,275, filed Sep. 18, 2013, entitled “Methods of Depositing Magnesium Oxide (MgO) Films,” which is hereby incorporated by reference in its entirety.The present invention relates to producing large grain or single crystal films such as Magnesium Oxide (MgO) films.Magnesium oxide (MgO) thin films have assumed significant importance in ...

METHOD OF PRODUCING HIGH-PURITY CARBIDE MOLD

A method of producing a high-purity carbide mold includes the steps of (A) providing a template; (B) putting the template at a deposition region in a growth chamber; (C) putting a carbide raw material in the growth chamber; (D) providing a heating field; (E) introducing a gas; (F) depositing the carbide raw material; and (G) removing the template. The method is able to produce a mold from a high-purity carbide with a purity of 93% or above and therefore is effective in solving known problems with carbide molds, that is, low hardness and low purity. 1. A method of producing a high-purity carbide mold , comprising the steps of:(A) providing a template made of a carbon high-temperature material;(B) putting the template in a growth chamber, wherein a surface of the template functions as a deposition surface which a carbide raw material deposits on;(C) putting the carbide raw material in the growth chamber, wherein the carbide raw material and the template are disposed at two opposing ends of the growth chamber, respectively;(D) providing a heating field, wherein the heating field is provided for the growth chamber by a heating field device enclosing the growth chamber, wherein a location of the heating field device is adjusted to allow the carbide raw material to be positioned at a relatively hot end of the heating field, allow the carbide raw material to sublime because of the heating field, and allow the template to be positioned at a relatively cold end of the heating field, wherein temperature of the heating field ranges from room temperature to 3000° C., and temperature gradient of the heating field is 2.5-100° C./cm or above;(E) introducing a gas, including introducing an inert gas into the growth chamber;(F) depositing the carbide raw material, wherein the location of the heating field device is continually adjusted to allow the carbide raw material to sublime because of the heating field as recited in step (D), thereby depositing gaseous said carbide raw ...