Foam pressure sensor

Measuring element for measuring a pressure and printing measuring sensor.

Es wird ein MEMS-Chip (3) zum Messen eines Druckes in einem Druckraum (D), umfassend ein MEMS-Substrat und ein Trägersubstrat, die flächig entlang ihrer Längsachse (A) aufeinandergebondet sind, wobei der MEMS-Chip (3) einen messenden Bereich (4) mit elektromechanischen Messmitteln und einen über Leitungen (8) mit dem messenden Bereich (4) verbundenen Kontaktierungsbereich (6) mit Kontakten (16) aufweist, beschrieben, wobei die Durchführung in einen Druckraum vereinfacht ist und auf störungsanfällige Bondingdrähte verzichtet wird. Dies wird dadurch gelöst, dass der MEMS-Chip (3) stabförmig ausgestaltet ist, wobei der messende Bereich (4) und der Kontaktierungsbereich (6) in Richtung Längsachse (A) durch einen Durchführungsbereich (11) voneinander beabstandet sind, wobei der MEMS-Chip (3) zur druckdichten Anordnung in einer Durchführung geeignet ist, welche durch ein vollumfängliches Umhüllen der Oberfläche des Durchführungsbereichs (11) normal zur Längsachse (A) ausbildbar ist.

MEMS pressure sensor with thermal compensation

A semiconductor device having a capacitive pressure sensor structure includes a substrate, an interlayer dielectric layer on the substrate, a bottom electrode of a pressure sensor within the interlayer dielectric layer, a pressure sensing cavity above the bottom electrode, a sensing film above the pressure sensing cavity and covering a portion of the interlayer dielectric layer, a cover layer on the interlayer dielectric layer and on the sensing film, the cover layer having an opening exposing a portion of the sensing film, and a high thermal expansion coefficient material layer disposed on cover layer and sidewalls of the opening. Through the use of the high thermal expansion coefficient material layer, the capacitive pressure sensor structure is not susceptible to changes in ambient temperature to enhance the sensitivity of the capacitive pressure sensor structure.

EMBEDDED MEMS SENSORS AND RELATED METHODS

Embodiments of embedded MEMS sensors and related methods are described herein. Other embodiments and related methods are also disclosed herein.

CAPACITIVE PRESSURE SENSOR AND INPUT DEVICE

Provided is a capacitive pressure sensor wherein an initial strain is hard to occur in a diaphragm. An upper surface of a fixed electrode substrate (32) is covered by a dielectric film (33). A recess (34) (convex portion) is formed in one direction of the upper surface or the lower surface of a compressive stress film (38). An upper substrate (35) is stacked on the dielectric film (33). An area facing the recess (34) among the upper substrate (35) comprises the diaphragm capable of being elastically deformed. The compressive stress film (38) is formed on at least a portion of the upper surface of the diaphragm. COPYRIGHT KIPO 2015 ...

Druckmesseinrichtung

Es ist eine in einem großen Temperaturbereich einsetzbare Druckmesseinrichtung mit einem keramischen Drucksensor (1), der einen Grundkörper (3) und eine unter Einschluss einer Druckkammer (5) auf dem Grundkörper (3) angeordnete, in Abhängigkeit von einem darauf einwirkenden zu messenden Druck (p) verformbare Messmembran (7) aus Keramik umfasst, der einen eine auf der Messmembran (7) angeordnete Elektrode (19) und eine auf dem Grundkörper (3) angeordnete Gegenelektrode (21) umfassenden Kondensator (C) aufweist, und dessen Elektrode (19) aus einem eine temperaturabhängige Impedanz aufweisenden Material besteht, beschrieben, der sich dadurch auszeichnet, dass ein induktiv zu Schwingungen anregbarer elektrischer Schwingreis vorgesehen ist, der den Kondensator und eine als elektrisch leitfähige Beschichtung auf eine Oberfläche des Drucksensors (1) aufgebrachte, insb. durch physikalische Abscheidung aus der Gasphase, insb. durch Sputtern, aufgebrachte Sensorinduktivität (LS) umfasst, und eine ...

Foam pressure sensor

A pressure sensor includes a first plate (102), a second plate (104) and a foam (106) disposed between the first and second plate. The foam is a polyurethane foam having an average cell size of about 50 to 250 urn and a density of between 5 to 30 lbs/ft3.

PIEZOELECTRIC MICROMACHINED PRESSURE TRANSDUCER WITH HIGH SENSITIVITY AND RELATED MANUFACTURING PROCESS

Micromachined pressure transducer including: a fixed body (5) of semiconductor material, which laterally delimits a main cavity (7); a transduction structure (6), which is suspended on the main cavity (7) and includes at least a pair of deformable structures (10) and a movable region (8), which is formed by semiconductor material and is mechanically coupled to the fixed body (5) through the deformable structures (10). Each deformable structure (10) includes: a support structure (15) of semiconductor material, which includes a first and a second beam (20,22), each of which has ends fixed respectively to the fixed body (5) and to the movable region (8), the first beam (20) being superimposed, at a distance, on the second beam (22); and at least one piezoelectric transduction structure (12,14), mechanically coupled to the first beam (20). The piezoelectric transduction structures (12,14) are electrically controllable so that they cause corresponding deformations of the respective support structures ...

Foam pressure sensor

Cavity with silicon on insulator MEMS pressure sensing device with an extended shallow polygon cavity

The MEMS pressure sensor has an extended shallow polygon cavity on a top side of a silicon supporting substrate. A buried silicon dioxide layer is formed between the top side of the supporting substrate and a bottom side of a device layer. Piezoresistors and bond pads are formed and located on a top side of the device layer and produce measureable voltage changes responsive to a fluid pressure applied to the device layer. The extended shallow polygon cavity improves the device sensitivity while avoiding low pressure nonlinearity during. A Cavity SOI process is described which enables shrinking the die size of the MEMS pressure sensing device. Corner metal bond pads having a keep-out distance to prevent a wire bonder from breaking the thin diaphragm.

静電容量型圧力センサ及びその製造方法

Sensoreinrichtung und Verfahren zur Herstellung einer Sensoreinrichtung

Die vorliegende Erfindung schafft eine Sensoreinrichtung (1) umfassend, ein Substrat (2) mit einer Oberseite (2a) und mit einer Kavität (3) im Substrat (2), welche von der Oberseite (2a) im Substrat (2) ausgeformt ist; einen Träger (4) umfassend ein Füllmaterial (MT), welcher auf der Oberseite (2a) des Substrats (2) angeordnet ist und zumindest teilweise einen Randbereich (3a) der Kavität (3) bedeckt und die Kavität (3) zumindest teilweise überdeckt; eine sensitive Schicht (5), welche strukturiert auf dem Träger (4), an einer dem Substrat (2) abgewandten Seite und über der Kavität (3), angeordnet ist, wobei eine laterale Ausdehnung der Kavität (3) zumindest in einer Richtung bezüglich der sensitiven Schicht (5) zentriert ist; und eine Passivierung (6), welche die sensitive Schicht (5) und den Träger (4) an einer dem Substrat (2) abgewandten Seite abdeckt.

MEMS CHIP, MEASURING ELEMENT AND PRESSURE SENSOR FOR MEASURING A PRESSURE

Micro-electro-mechanical system chip (MEMS chip) for measuring a pressure in a pressure space (D), comprising a MEMS substrate (30) and a carrier substrate (31) which are bonded to one another in a two-dimensional manner, wherein the MEMS chip (3) is in the form of a rod and has a measuring region (4) with electromechanical measuring means, then a bushing region (11), then a contact-making region (6) which is connected to the measuring region (4) via lines (8) and has contacts (16), and wherein the MEMS chip (3) in the bushing region (11) is suitable for pressure-tight arrangement in a bushing. According to the invention, the electromechanical measuring means are configured in such a manner that the MEMS substrate (30) has a cavity (5) forming a blind hole, the edge of which forms a membrane (7) in the MEMS substrate (30), and a measuring bridge (19) comprising piezoresistive elements (2) on that side of this membrane (7) which faces away from the cavity (5). The MEMS substrate (30) is ...

SEMICONDUCTOR PRESSURE SENSOR AND MANUFACTURING METHOD THEREOF

The present invention relates to a semiconductor pressure sensor and a manufacturing method thereof and, more specifically, relates to a semiconductor pressure sensor capable of stably maintaining a position of a strain gauge sensor fixated to a diaphragm; and a method of manufacturing the same. The present invention provides a semiconductor pressure sensor comprising: a diaphragm; a glass frit layer provided on a surface of the diaphragm; and a strain gauge sensor attached by the glass frit layer wherein the glass frit layer is formed of a plurality of layers having different glass transition temperatures and different thermal expansion coefficients, and a method of manufacturing the same. COPYRIGHT KIPO 2017 ...

Halbleiterdrucksensor

Bereitgestellt wird ein Halbleiterdrucksensor, der zur Regulierung einer Spannung keine Wärmebehandlung benötigt und der betriebssicherer ist. Ein Halbleiterdrucksensor 100A umfasst eine stationäre Elektrode 18, die an einer Hauptseite eines Halbleitersubstrats 11 angeordnet ist, und eine Membran 61, die durch einen Luftspalt 51 in einer Dickenrichtung des Halbleitersubstrats 11 zumindest in einem Bereich bewegbar ist, wo die Membran gegenüberliegend zu der stationären Elektrode 18 ist. Die Membran 61 umfasst: eine bewegbare Elektrode 39; eine erste Isolierschicht 39d, die bezüglich der bewegbaren Elektrode 39 näher an dem Luftspalt 51 angeordnet ist; eine zweite Isolierschicht 58, die bezüglich der bewegbaren Elektrode 39 gegenüberliegend zu dem Luftspalt 51 angeordnet ist, wobei die zweite Isolierschicht von demselben Schichttyp ist wie die erste Isolierschicht 39d; und ein Abschirmschicht 59, die die zweite Isolierschicht 58 zwischen sich und der bewegbaren Elektrode 39 aufnimmt.

Thin film apparatus

Capacitive Pressure Sensors and Other Devices Having a Suspended Membrane and Having Rounded Corners at an Anchor Edge

Capacitive pressure sensors and other devices are disclosed. In an embodiment a semiconductor device includes a first electrode, a cavity over the first electrode and a second electrode including a suspended membrane over the cavity and electrically conductive anchor trenches laterally surrounding the cavity, wherein the anchor trenches include an inner anchor trench and an outer anchor trench, the outer anchor trench having rounded corners.

Cavity with silicon on insulator MEMS pressure sensing device with an extended shallow polygon cavity

Pressure sensor and microphone

According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

Pressure sensor and microphone

According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

Embedded MEMS sensors and related methods

Embodiments of embedded MEMS sensors and related methods are described herein. Other embodiments and related methods are also disclosed herein.

Micromechanical pressure sensor device including a diaphragm system and corresponding manufacturing method

A micromechanical pressure sensor device and a corresponding manufacturing method. The micromechanical pressure sensor device is equipped with a sensor substrate; a diaphragm system that is anchored in the sensor substrate and that includes a first diaphragm and a second diaphragm situated spaced apart therefrom, which are circumferentially connected to one another in an edge area and enclose a reference pressure in an interior space formed in between; and a plate-shaped electrode that is suspended in the interior space and that is situated spaced apart from the first diaphragm and from the second diaphragm and forms a first capacitor with the first diaphragm and forms a second capacitor with the second diaphragm. The first diaphragm and the second diaphragm are designed in such a way that they are deformable toward one another when acted on by an external pressure.

Druckerfassungsvorrichtung mit verlängerter, flacher polygonförmiger Kavität

Die vorliegende Erfindung betrifft eine MEMS-Druckerfassungsvorrichtung (600), die eine verlängerte, flache, polygonförmige Kavität (602) aufweist, die in einer Oberseite (604) eines Silizium-Trägersubstrats (606) gebildet ist. Eine eingebettete Silizium-Dioxid-Schicht (610) ist zwischen der Oberseite (604) des Trägersubstrats (606) und einer Unterseite einer Vorrichtungsschicht (616) gebildet. Es sind Piezowiderstände (618) und Bondpads (810) gebildet, die sich auf einer Oberseite der Vorrichtungsschicht (616) befinden und messbare Spannungsänderungen als Reaktion auf einen Fluiddruck erzeugen, der auf die Vorrichtungsschicht (616) aufgebracht wird. Der Zweck der verlängerten, flachen, polygonförmigen Kavität (602) besteht darin, bei Erhalten einer geringen Drucknichtlinearität die Empfindlichkeit zu verbessern oder den Messbereich zu vergrößern, während die Matrizengröße des MEMS-Druckerfassungsvorrichtungs-Dies mit metallische Eck-Bondpads (800) verkleinert wird, die von der Kavität ...

Mikromechanische Drucksensorvorrichtung und entsprechendes Herstellungsverfahren

Die Erfindung schafft eine mikromechanische Drucksensorvorrichtung und ein entsprechendes Herstellungsverfahren. Die mikromechanische Drucksensorvorrichtung ist ausgestattet mit einem Sensorsubstrat (SS); einer im Sensorsubstrat (SS) verankerten Membrananordung, welche eine erste Membran (M1) und eine davon beabstandete zweite Membran (M2), welche in einem Randbereich (R; R") umlaufend miteinander verbunden sind und in einem dazwischen gebildeten Innenraum (IR) einen Referenzdruck (P0) einschließen; und einer in dem Innenraum (IR) aufgehängten plattenförmigen Elektrode (E1), welche von der ersten Membran (M1) und von der zweiten Membran (M2) beabstandet angeordnet ist und welche mit der ersten Membran (M1) eine erste Kapazität und mit der zweiten Membran (M2) eine zweite Kapazität bildet. Die erste Membran (M1) und die zweite Membran (M1) sind derart ausgestaltet, dass sie bei Beaufschlagung mit einem äußeren Druck (PA; PA, PA') zueinander hin deformierbar sind.

Cavity with silicon on insulator MEMS pressure sensing device with an extended shallow cross-shaped cavity

An improved microelectromechanical system (MEMS) pressure sensing device has an extended shallow polygon cavity on a top side of a silicon supporting substrate. A buried silicon dioxide layer is formed between the top side of the supporting substrate and a bottom side of a device layer. Piezoresistors and bond pads are formed and located on a top side of the device layer and produce measureable voltage changes responsive to a fluid pressure applied to the device layer. The purpose of the extend shallow polygon cavity is to improve the sensitivity or increase the span while keep a low pressure nonlinearity during shrinking the die size of the MEMS pressure sensing device die with corner metal bond pads having a keep-out distance to prevent a wire bonder from breaking the thin diaphragm.

반도체 압력 센서 및 그 제조 방법

... 본 발명은 반도체 압력 센서 및 그 제조 방법에 관한 것으로서, 상세하게는 다이어 프램에 고정되는 스트레인 게이지 센서의 위치를 안정적을 유지시킬 수 있는 반도체 압력 센서 및 그 제조 방법에 관한 것이다. 이러한 본 발명은 다이어 프램과; 다이어 프램의 표면에 마련되는 글래스 프릿층과; 상기 글래스 프릿층에 의하여 부착되는 스트레인 게이지 센서를 포함하되, 상기 글래스 프릿층은 서로 다른 유리 전이 온도와 서로 다른 열팽창 계수를 갖는 복수의 층으로 구현되는 것을 특징으로 하는 반도체 압력 센서 및 그 제조 방법을 제공한다.

circuito integrado de sistema micro-eletro-mecânico, elemento de medição e sensor de pressão

EMBEDDED MEMS SENSORS AND RELATED METHODS

Embodiments of embedded MEMS sensors and related methods are described herein. Other embodiments and related methods are also disclosed herein.

Vorrichtung zum Bestimmen eines Drucks und Verfahren zum Herstellen derselben

Die Erfindung schafft eine Vorrichtung (1; 100; 200; 300; 400) zum Bestimmen eines Drucks und ein Verfahren zum Herstellen derselben. Die Vorrichtung ist ausgebildet mit: einem Gehäuse (10) mit einem Hohlraum (12) und mit einer ersten Dichtungsstruktur (14; 114); einer Sensoreinrichtung (20; 120; 320; 520) mit einer zweiten Dichtungsstruktur (24; 124; 524), welche sich mit der ersten Dichtungsstruktur (14; 114) derart in Eingriff befindet, dass eine Mündung (13) des Hohlraums (12) durch die Sensoreinrichtung (20; 120; 220) verschließbar ist; wobei die Sensoreinrichtung (20; 120; 320; 520) dazu ausgebildet ist, einen Druck, mit welchem der Hohlraum (12) beaufschlagt ist, zu bestimmen; und einer Dichtungseinrichtung (50; 150; 250; 350; 450), welche zumindest teilweise in dem Hohlraum (12) angeordnet ist und welche dazu ausgebildet ist, durch Ausüben einer Anpresskraft auf die Sensoreinrichtung (20; 120; 320; 520) die zweite Dichtungsstruktur (24; 124; 524) an die erste Dichtungsstruktur ( ...

CAPACITIVE PRESSURE SENSOR AND METHOD FOR MANUFACTURING SAME

... [Problem] To provide a capacitive pressure sensor particularly in which satisfactory sealing properties and sensitivity can be achieved and parasitic capacitance can be minimized, also to provide a method for manufacturing this capacitive pressure sensor. [Solution] A capacitive pressure sensor has a movable electrode (11) and a fixed electrode (12) made of silicon, and an insulating layer (13) for bonding the electrodes together. The movable electrode (11) has a pressure-sensitive diaphragm (14) capable of being displaced, and a peripheral edge part (16) bonded via the fixed electrode (12) and the insulating layer (13). The movable electrode (11) is formed farther inward than an external peripheral surface (12a) of the fixed electrode (12), a protruding surface (20) of the fixed electrode (12) widens to the periphery of the movable electrode (11), and the insulating layer (13) is formed over the entire protruding surface (20) from between the peripheral edge part (16) and the fixed electrode ...

Pressure sensor and microphone

According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

Semiconductor pressure sensor

A semiconductor pressure sensor includes a fixed electrode placed at a principal surface of a semiconductor substrate, and a diaphragm movable through an air gap in a thickness direction of the semiconductor substrate at least in an area where the diaphragm is opposed to the fixed electrode. The diaphragm includes: a movable electrode; a first insulation film placed closer to the air gap with respect to the movable electrode; a second insulation film placed opposite to the air gap with respect to the movable electrode, the second insulation film being of a same film type as the first insulation film; and a shield film that sandwiches the second insulation film with the movable electrode.

Mikromechanisches Bauteil und Herstellungsverfahren für ein mikromechanisches Bauteil

Die Erfindung betrifft ein mikromechanisches Bauteil mit einer Trägerstruktur (10) mit mindestens zwei Membranen (12), wobei die mindestens zwei Membranen (12) bei einer Druckgleichheit auf einer ersten Seite (10a) der Trägerstruktur (10) und einer von der ersten Seite (10a) weg gerichteten zweiten Seite (10b) der Trägerstruktur (10) in einer von einer ersten Raumrichtung (x) und einer senkrecht zu der ersten Raumrichtung (x) ausgerichteten zweiten Raumrichtung (y) aufgespannten Ebene vorliegen und mittels eines Druckunterschieds verwölbbar sind, und mindestens einer Aktorelektrode (18), welche mittels einer Verwölbung der mindestens zwei Membranen (12) aus ihrer jeweiligen Ausgangsstellung verstellbar ist, wobei jede der mindestens zwei Membranen (12) mit einer gleichen ersten Ausdehnung (a1) in der ersten Raumrichtung (x) und einer gleichen zweiten Ausdehnung (a2) in der zweiten Raumrichtung (y) ausgebildet ist, wobei die erste Ausdehnung (a1) um zumindest einen Faktor von 1,25 größer ...

Schaum-Drucksensor

Ein Drucksensor, aufweisend eine erste Platte, eine zweite Platte und einen Schaum, der zwischen der ersten und zweiten Platte angeordnet ist. Der Schaum ist ein Polyurethanschaum mit einer durchschnittlichen Zellgröße von etwa 50 bis 250 µm und einer Dichte von etwa 5 bis 30 lbs/ft3.

PRESSURE SENSOR AND MICROPHONE

According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

Semiconductor device and electronic device

Halbleiterdrucksensor

Halbleiterdrucksensor (100A, 100B, 100C, 100D, 100E, 100F), aufweisend:• eine stationäre Elektrode (18), die an einer Hauptseite eines Halbleitersubstrats (11) angeordnet ist; und• eine Membran (61), die durch einen Luftspalt (51) in einer Dickenrichtung des Halbleitersubstrats zumindest in einem Bereich bewegbar ist, wo die Membran gegenüberliegend zu der stationären Elektrode ist, wobei die Membran• eine bewegbare Elektrode (39);• eine erste Isolierschicht (39d), die mit Bezug auf die bewegbare Elektrode näher an dem Luftspalt angeordnet ist;• eine zweite Isolierschicht (58), die mit Bezug auf die bewegbare Elektrode gegenüberliegend zu dem Luftspalt angeordnet ist, wobei die zweite Isolierschicht von demselben Schichttyp ist wie die erste Isolierschicht; und• eine Abschirmschicht (59), die die zweite Isolierschicht zwischen sich und der bewegbaren Elektrode aufnimmt, aufweist,dadurch gekennzeichnet, dass die bewegbare Elektrode eine erste Polysiliziumschicht (39a), die eine Druckeigenspannung ...

Silicon carbide-based combined temperature-pressure micro-electro-mechanical system (MEMS) sensor chip and preparation method thereof

A silicon carbide-based micro-electro-mechanical system (MEMS) combined temperature-pressure sensor chip and a preparation thereof. The chip includes a peripheric pressure-measuring unit and a center temperature-measuring unit. The pressure-measuring unit includes a silicon carbide substrate with a raised island and a pressure sensitive diaphragm formed by etching the back of the substrate. The raised island and the pressure-sensitive diaphragm constitute a membrane-island structure. Four piezoresistive strips are arranged symmetrically along a circumferential direction of a root of the pressure-sensitive diaphragm and between the raised island and the pressure-sensitive diaphragm. The temperature-measuring unit includes the raised island and a thin-film thermocouple arranged thereon.

MEMS 칩, 측정 소자 및 압력을 측정하기 위한 압력 센서

... 본 발명은 2차원 방식으로 서로에 본딩되어 있는 MEMS 기판(30) 및 캐리어 기판(31)을 포함하는 압력 공간(D) 내의 압력을 측정하는 마이크로-전자-기계 시스템 칩(MEMS 칩)에 관한 것으로, 상기 MEMS 칩(3)은 막대의 형태이고, 전자 기계적 측정 수단을 구비한 측정 영역(4), 그 다음에 부싱 영역(11), 그 다음에 라인(8)을 통해 측정 영역(4)과 연결되는 접촉 형성 영역(6)을 가지며, 접촉부(16)를 갖고, 부싱 영역(11) 내에서 MEMS 칩(3)은 부싱 내의 압력 밀폐형 배치를 위해 적합하다. 본 발명에 따르면, 전자 기계적 측정 수단은 상기 MEMS 칩(3)이 그 에지가 상기 MEMS 기판(30) 내에 멤브레인(7)을 형성하는 블라인드 홀을 형성하는 공동(5)을 갖고, 피에조저항 소자(2)를 포함하는 측정 브릿지(19)가 상기 공동(5)으로부터 떨어져서 마주보는 이 멤브레인(7)의 측면 상에 배치되도록 하는 방식으로 구성된다. 상기 MEMS 기판(30)은 상기 캐리어 기판(31)이 상기 멤브레인(7) 아래에 형성된 상기 공동(5)의 바닥 벽(50)을 형성하도록 상기 캐리어 기판(31)을 마주보는 상기 공동(5)의 측면과 함께 상기 캐리어 기판(31)에 본딩된다.

ELECTROSTATIC CAPACITANCE TYPE PRESSURE SENSOR AND MANUFACTURING METHOD OF ELECTROSTATIC CAPACITANCE TYPE PRESSURE SENSOR

PROBLEM TO BE SOLVED: To provide an electrostatic capacitance type pressure sensor capable of achieving cost reduction and miniaturization. SOLUTION: A pressure sensor 1 includes: a silicon substrate 2 which has a reference pressure chamber 8 formed in it; a diaphragm 9 which is composed of a part of the silicon substrate 2 and is formed in the surface layer part of the silicon substrate 2 in such a manner that it partitions the reference pressure chamber 8; and an isolation insulating layer 10 which surrounds the perimeter of the diaphragm 9 and isolates the diaphragm 9 from a remaining part 11 of the silicon substrate 2. The diaphragm 9 has through-holes 12 formed in it which communicate with the reference pressure chamber 8, and a filling body 14 is disposed in the through-holes 12. COPYRIGHT: (C)2012,JPO&INPIT ...

EMBEDDED MEMS SENSORS AND RELATED METHODS

Embodiments of embedded MEMS sensors and related methods are described herein. Other embodiments and related methods are also disclosed herein.

Capacitance type pressure sensor and method for manufacturing a capacitance type pressure sensor

A capacitance type pressure sensor includes a semiconductor substrate having a reference pressure compartment formed therein, a diaphragm formed of a portion of the semiconductor substrate and formed in a surface layer portion of the semiconductor substrate to define the reference pressure compartment, the diaphragm having a through-hole communicating with the reference pressure compartment, fillers arranged within the through-hole, and an isolation insulating layer surrounding the diaphragm to isolate the diaphragm from the remaining portion of the semiconductor substrate.

Capacitive pressure sensors and other devices having a suspended membrane and having rounded corners at an anchor edge

Capacitive pressure sensors and other devices are disclosed. In an embodiment a semiconductor device includes a first electrode, a cavity over the first electrode and a second electrode including a suspended membrane over the cavity and electrically conductive anchor trenches laterally surrounding the cavity, wherein the anchor trenches include an inner anchor trench and an outer anchor trench, the outer anchor trench having rounded corners.

CAPACITANCE TYPE PRESSURE SENSOR AND METHOD FOR MANUFACTURING A CAPACITANCE TYPE PRESSURE SENSOR

A capacitance type pressure sensor includes a semiconductor substrate having a reference pressure compartment formed therein, a diaphragm formed of a portion of the semiconductor substrate and formed in a surface layer portion of the semiconductor substrate to define the reference pressure compartment, the diaphragm having a through-hole communicating with the reference pressure compartment, fillers arranged within the through-hole, and an isolation insulating layer surrounding the diaphragm to isolate the diaphragm from the remaining portion of the semiconductor substrate.

Differential pressure sensor with a capacitive read out system

A differential pressure sensor comprises a cavity having a base including a base electrode and a membrane suspended above the base which includes a membrane electrode, wherein the first membrane is sealed with the cavity defined beneath the first membrane. A first pressure input port is coupled to the space above the sealed first membrane. A capacitive read out system is used to measure the capacitance between the base electrode and membrane electrode. An interconnecting channel is between the cavity and a second pressure input port, so that the sensor is responsive to the differential pressure applied to opposite sides of the membrane by the two input ports.

Thin film apparatus

A thin film apparatus having a plurality of thin film cells is disclosed. Each thin film cell includes a crystalline layer and a surrounding layer. The crystalline layer has a shape of polygon. The surrounding layer is partially located on the crystalline layer. The crystalline layer is surrounded by the surrounding layer.

MEMS chip, measuring element and pressure sensor for measuring a pressure

A micro-electro-mechanical system (MEMS) chip for measuring a pressure in a pressure space includes a MEMS substrate having a measuring region, a contact-making region connected to the measuring region via lines and having contacts, and a bushing region disposed between the measuring region and the contact-making region. The MEMS substrate defines a cavity formed as a blind hole that defines an opening through one side of the MEMS substrate, the bottom of the blind hole forming a membrane. A measuring bridge includes piezoresistive elements disposed on that side of the membrane which faces away from the cavity's opening. A carrier substrate is disposed over the cavity's opening and bonded to the MEMS substrate in a two-dimensional manner to form a rod, with the result that the carrier substrate forms a bottom wall of the cavity spaced apart from the membrane.

MEMS chip, measuring element and pressure sensor for measuring pressure

CAPACITIVE PRESSURE SENSORS AND OTHER DEVICES HAVING A SUSPENDED MEMBRANE AND HAVING ROUNDED CORNERS AT AN ANCHOR EDGE

Foam pressure sensor

TWO-PHASE STAINLESS STEEL, THIN SHEET MATERIAL AND DIAPHRAGM USING TWO-PHASE STAINLESS STEEL

To provide a two-phase stainless steel, a thin sheet material and a diaphragm including the same capable of achieving high strength and excellent corrosion resistance as well as obtaining a smooth surface state. The two-phase stainless steel of the present invention includes a composition of Cr: 24 to 26 mass %, Mo: 2.5 to 3.5 mass %, Ni: 5.5 to 7.5 mass %, C0.03 mass %, N: 0.08 to 0.3 mass %, remaining part: Fe and unavoidable impurities, in which 2.0 mass % or less of Mn is contained if necessary, and the particle size of inclusion particles including an Al oxide or a Mn oxide caused by unavoidable impurities Al and Mn existing in a metal structure is 3 m or less.

Differential Pressure Sensor

A differential pressure sensor comprises a cavity having a base including a base electrode and a membrane suspended above the base which includes a membrane electrode, wherein the first membrane is sealed with the cavity defined beneath the first membrane. A first pressure input port is coupled to the space above the sealed first membrane. A capacitive read out system is used to measure the capacitance between the base electrode and membrane electrode. An interconnecting channel is between the cavity and a second pressure input port, so that the sensor is responsive to the differential pressure applied to opposite sides of the membrane by the two input ports.

ELECTRONIC DEVICE, PHYSICAL QUANTITY SENSOR, PRESSURE SENSOR, ALTIMETER, ELECTRONIC APPARATUS, AND MOVING OBJECT

A physical quantity sensor includes a substrate, a piezoelectric resistive element that is disposed on one surface side of the substrate, a wall portion that is disposed on the one surface side of the substrate so as to surround the piezoelectric resistive element in a plan view of the substrate, and a ceiling portion that is disposed on an opposite side to the substrate with respect to the wall portion and forms a cavity along with the wall portion, in which an inner circumferential edge of an end portion of the wall portion on an opposite side to the substrate includes curved portions which are curved in the plan view.

Thin film apparatus

A thin film apparatus having a plurality of thin film cells is disclosed. Each thin film cell includes a crystalline layer and a surrounding layer. The crystalline layer has a shape of polygon. The surrounding layer is partially located on the crystalline layer. The crystalline layer is surrounded by the surrounding layer.

Foam pressure sensor

A pressure sensor includes a first plate, a second plate and a foam disposed between the first and second plate. The foam is a polyurethane foam having an average cell size of about 50 to 250 [mu]m and a density of between 5 to 30 lbs/ft3.

Method of manufacturing physical quantity sensor device and physical quantity sensor device

An inner housing part has through-holes for connecting first lead pins (power supply terminal, output terminal, ground terminal) with the connector pins. The inner housing part has grooves that house second lead pins for adjusting output signals of a sensor chip. Three of the grooves each has a shape in which a distance between opposing sides of the groove is less than a diameter of the second lead pin that corresponds to the groove. The inner housing part is fixed to a case by a thermoset adhesive so as to house lead pins arranged in the case included in a sensor element. The second lead pins are fitted in the grooves, suppressing lifting of the inner housing part during curing of the adhesive.

FOAM PRESSURE SENSOR

A pressure sensor includes a first plate (102), a second plate (104) and a foam (106) disposed between the first and second plate. The foam is a polyurethane foam having an average cell size of about 50 to 250 urn and a density of between 5 to 30 lbs/ft3.

MEMS CHIP, MEASURING ELEMENT AND PRESSURE SENSOR FOR MEASURING A PRESSURE

A micro-electro-mechanical system (MEMS) chip for measuring a pressure in a pressure space includes a MEMS substrate having a measuring region, a contact-making region connected to the measuring region via lines and having contacts, and a bushing region disposed between the measuring region and the contact-making region. The MEMS substrate defines a cavity formed as a blind hole that defines an opening through one side of the MEMS substrate, the bottom of the blind hole forming a membrane. A measuring bridge includes piezoresistive elements disposed on that side of the membrane which faces away from the cavity's opening. A carrier substrate is disposed over the cavity's opening and bonded to the MEMS substrate in a two-dimensional manner to form a rod, with the result that the carrier substrate forms a bottom wall of the cavity spaced apart from the membrane.

Electronic device, physical quantity sensor, pressure sensor and altimeter

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

An object of the present invention is to suppress an error in the value detected by a pressure sensor, which may be caused when environmental temperature varies. A semiconductor substrate has a first conductivity type. A semiconductor layer is formed over a first surface of the semiconductor substrate. Each of resistance parts has a second conductivity type, and is formed in the semiconductor layer. The resistance parts are spaced apart from each other. A separation region is a region of the first conductivity type formed in the semiconductor layer, and electrically separates the resistance parts from each other. A depressed portion is formed in a second surface of the semiconductor substrate, and overlaps the resistance parts, when viewed planarly. The semiconductor layer is an epitaxial layer.

PRESSURE SENSOR AND MICROPHONE

According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

MICROMECHANICAL PRESSURE SENSOR DEVICE AND CORRESPONDING MANUFACTURING METHOD

A micromechanical pressure sensor device and a corresponding manufacturing method. The micromechanical pressure sensor device is equipped with a sensor substrate; a diaphragm system that is anchored in the sensor substrate and that includes a first diaphragm and a second diaphragm situated spaced apart therefrom, which are circumferentially connected to one another in an edge area and enclose a reference pressure in an interior space formed in between; and a plate-shaped electrode that is suspended in the interior space and that is situated spaced apart from the first diaphragm and from the second diaphragm and forms a first capacitor with the first diaphragm and forms a second capacitor with the second diaphragm. The first diaphragm and the second diaphragm are designed in such a way that they are deformable toward one another when acted on by an external pressure.

静電容量型圧力センサおよび静電容量型圧力センサの製造方法

THIN FILM APPARATUS

A thin film apparatus having a plurality of thin film cells is disclosed. Each thin film cell includes a crystalline layer and a surrounding layer. The crystalline layer has a shape of polygon. The surrounding layer is partially located on the crystalline layer. The crystalline layer is surrounded by the surrounding layer.

SILICON CARBIDE-BASED COMBINED TEMPERATURE-PRESSURE MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) SENSOR CHIP AND PREPARATION METHOD THEREOF

A silicon carbide-based micro-electro-mechanical system (MEMS) combined temperature-pressure sensor chip and a preparation thereof. The chip includes a peripheric pressure-measuring unit and a center temperature-measuring unit. The pressure-measuring unit includes a silicon carbide substrate with a raised island and a pressure sensitive diaphragm formed by etching the back of the substrate. The raised island and the pressure-sensitive diaphragm constitute a membrane-island structure. Four piezoresistive strips are arranged symmetrically along a circumferential direction of a root of the pressure-sensitive diaphragm and between the raised island and the pressure-sensitive diaphragm. The temperature-measuring unit includes the raised island and a thin-film thermocouple arranged thereon.

Semiconductor device and manufacturing method thereof

An object of the present invention is to suppress an error in the value detected by a pressure sensor, which may be caused when environmental temperature varies. A semiconductor substrate has a first conductivity type. A semiconductor layer is formed over a first surface of the semiconductor substrate. Each of resistance parts has a second conductivity type, and is formed in the semiconductor layer. The resistance parts are spaced apart from each other. A separation region is a region of the first conductivity type formed in the semiconductor layer, and electrically separates the resistance parts from each other. A depressed portion is formed in a second surface of the semiconductor substrate, and overlaps the resistance parts, when viewed planarly. The semiconductor layer is an epitaxial layer.

Apparatus for determining pressure and method of manufacturing the same

Foam pressure sensor

A pressure sensor includes a first plate (102), a second plate (104) and a foam (106) disposed between the first and second plate. The foam is a polyurethane foam having an average cell size of about 50 to 250 urn and a density of between 5 to 30 lbs/ft3.

MEMS pressure sensor using capacitive technique

A micro-electro-mechanical system (MEMS) pressure sensor includes a silicon spacer defining an opening, a silicon membrane layer mounted above the spacer, a silicon sensor layer mounted above the silicon membrane layer, and a capacitance sensing circuit. The silicon membrane layer forms a diaphragm opposite of the spacer opening, and a stationary perimeter around the diaphragm and opposite the spacer. The silicon sensor layer includes an electrode located above the diaphragm of the silicon membrane layer. The capacitance sensing circuit is coupled to the electrode and the silicon membrane layer. The electrode and the silicon membrane layer move in response to a pressure applied to the diaphragm. The movement of the silicon membrane layer causes it to deform, thereby changing the capacitance between the electrode and the silicon membrane layer by an amount proportional to the change in the pressure.

Semiconductor device and manufacturing method thereof

圧力センサ及びマイクロフォン

Pressure-sensor device

A pressure-sensor device ( 1 ) comprises: —a pressure-sensitive component ( 9 ) having a body, defined in which is a blind cavity, and having a membrane portion ( 9 a ), operatively associated to which is a detection element (R); and —a connection structure ( 2 ), which has a duct in communication with the cavity of the pressure-sensitive component ( 9 ) and is to receive a fluid, a pressure of which is to be detected. The connection structure ( 2 ) comprises a supporting body ( 2 a ) of the pressure-sensitive component ( 9 ), which defines a respective passage ( 2 b ), and a compressible element ( 12, 18 ) that is designed to be in contact with the fluid and is configured for compensating possible variations of volume thereof. The compressible element ( 12, 18 ) is positioned at least in part within the cavity ( 11 ) of the pressure-sensitive component ( 9 ) and/or in a stretch of the passage ( 2 b ) of the supporting body ( 2 a ) that is close to the cavity ( 11 ) of the pressure-sensitive component ( 9 ).

Thin Semiconductor Device Having Embedded Die Support and Methods of Making the Same

Ultra-thin semiconductor devices, including piezoresistive sensing elements can be formed in a wafer stack that facilitates handling many thin device dice at a wafer level. Three embodiments are provided to form the thin dice in a wafer stack using three different fabrication techniques that include anodic bonding, adhesive bonding and fusion bonding. A trench is etched around each thin die to separate the thin die from others in the wafer stack. A tether layer, also known as a tether, is used to hold thin dice or dice in a wafer stack. Such as wafer stack holds many thin dice together at a wafer level for handling and enables easier die picking in packaging processes.

High temperature strain sensor

An example sensor that includes a first Schottky diode, a second Schottky diode and an integrated circuit. The sensor further includes a voltage generator that generates a first voltage across the first Schottky diode and a second voltage across the second Schottky diode. When the first Schottky diode and the second Schottky diode are subjected to different strain, the integrated circuit measures the values of the currents flowing through the first Schottky diode and the second Schottky diode to determine the strain on an element where the first Schottky diode and the second Schottky diode are attached.

Robust design of high pressure sensor device

In a pressure sensing element made of piezoresistors formed into a silicon substrate, thermally-induced stresses on the piezoresistors and thermally-induced voltage offsets can be reduced by thinning the substrate prior to forming the resistors and then forming the resistors into the thinned-out recess. Forming a circular or disk-shaped recess in the substrate and then forming the resistors therein is believed to cause thermally-induced stresses to be evenly distributed and/or cancelled out on all four piezoresistors of a Wheatstone bridge circuit.

Manufacturing method for a micromechanical component, corresponding composite component, and corresponding micromechanical component

A micromechanical component including a first composite of a plurality of semiconductor chips, the first composite having a first front and back surfaces, a second composite of a corresponding plurality of carrier substrates, the second composite having a second front and back surfaces; wherein the first front surface and the second front surface are connected via a structured adhesion promoter layer in such a way that each semiconductor chip is connected, essentially free of cavities, to a corresponding carrier substrate corresponding to a respective micromechanical component.

Deep well process for mems pressure sensor

A micromechanical systems (MEMs) pressure sensor includes a semiconductor substrate having a deep well located within a first surface and a cavity located within a second, opposing surface. The semiconductor substrate has a first doping type. The deep well has a second doping type, with a gradient doping profile, thereby forming a PN junction within the substrate. The cavity forms a diaphragm, which is a substrate section that is thinner than the surrounding substrate sections, that comprises the deep well. One or more pizeoresistor elements are located within the deep well. The piezoresistors are sensitive to deformations, such as bending, in the diaphragm caused by changes in the pressure of the cavity.

Apparatus and Method for Minimizing Drift of a Piezo-Resistive Pressure Sensor Due to the Progressive Release of Mechanical Stress Over Time

An absolute piezo-resistive pressure sensor system and method employing multiple pressure sensing elements operating simultaneously to detect pressure. Both pressure sensing elements being subject to a common reference pressure within a sealed cavity. The first pressure sensing element detecting an offset voltage resulting from the progressive release of mechanical stress at an assembly interface between the sensing element and a base plate on which the sensing elements are assembled. Electronic circuitry compensates the pressure measured by the second pressure sensing element based on the offset voltage detected by the first pressure sensing element. 1. An absolute piezo-resistive pressure sensor system comprising:a single wafer having respective first and second cavities etched therein forming respective first and second deflectable membranes serving as respective first and second pressure sensing elements; the first deflectable membrane having an aperture defined therethrough, while the second deflectable membrane does not; a first surface of each of the first and second deflectable membranes being exposed to a pressure within the respective first and second cavities; an opposing second surface of each of the first and second deflectable membranes being enclosed in a common hermetically sealed chamber formed by a cover assembled to the single wafer, wherein a pressure within the chamber is substantially constant;a piezo-resistive material is assembled to the opposing second surface of each of the first and second deflectable membranes subject to the same pressure within the sealed chamber; anda base plate having a single hole defined therein; the wafer being assembled to the base plate with the hole substantially aligned with the second pressure sensing element.2. The system in accordance with claim 1 , wherein the wafer is made of silicon and the base plate is made of glass.3. The system in accordance with claim 1 , wherein the aperture defined therethrough the ...

Pressure sensor

A pressure sensor includes a detecting circuit configured to detect the difference between outputs from a first pressure variation sensor and a second pressure variation sensor. The first pressure variation sensor and the second pressure variation sensor have a lower limit frequency which provides sensitivity equal to or higher than a predetermined value as the effectively same frequency characteristics in accordance at least with a capacity of a cavity or a distance of a gap. The gap of the first pressure variation sensor communicates the exterior of the pressure sensor and the interior of the cavity of the first pressure variation sensor, and the gap of the second pressure variation sensor communicates the interior of the cavity of the first pressure variation sensor and the interior of the cavity of the second pressure variation sensor.

Catheter die

A catheter die is provided and includes an elongate body having first and second opposing end portions and an end face at the first one of the first and second opposing end portions. The elongate body defines a cavity within the first end portion with an interior facing surface of the cavity disposed to extend alongside at least a portion of the first end face. At least one or more piezoresistive pressure sensors are operably disposed proximate to the cavity.

PRESSURE SENSING DEVICE WITH STEPPED CAVITY TO MINIMIZE THERMAL NOISE

A pressure sensing element may include a diaphragm and a stepped cavity. The pressure sensing element may include a plurality of piezoresistors, which are operable to generate an electrical signal based on an amount of deflection of the diaphragm in response to a sensed pressure of the fluid. The pressure sensing element may be mounted onto a housing substrate using an adhesive so that a portion of the adhesive is attached to walls of a first cavity and to a step surface of the stepped cavity to redistribute thermally induced stresses on the pressure sensing element. The stepped cavity may be included in a MEMS pressure sensing element to reduce or eliminate thermal noise, such as temperature coefficient of offset voltage output (TCO). 1. An apparatus , comprising: a stepped cavity formed into a base surface of the pressure sensing element, by a plurality of walls of a first cavity, a step surface, a plurality of walls of a second cavity, and a bottom surface of a diaphragm; and', 'a plurality of piezoresistors on a top surface of the diaphragm., 'a pressure sensing element, including2. The apparatus of claim 1 , further comprising:at least one substrate; andan adhesive that connects the substrate to the base surface such that the walls of the first cavity and the step surface of the stepped cavity are adhered to at least a portion of the adhesive.3. The apparatus of claim 2 , wherein the adhesive further comprises:a base portion;an outer fillet portion integrally formed with the base portion, the outer fillet portion adjacent the at least one outer surface when the pressure sensing element is connected to the at least one substrate; andan inner fillet portion integrally formed with the base portion, the inner fillet portion substantially disposed in the first cavity when the pressure sensing element is connected to the at least one substrate.4. The apparatus of claim 2 , wherein the portion of the adhesive that is attached to the walls of the first cavity and to ...

Pressure detection module and pressure sensor device having such a pressure detection module

A pressure detection module of a pressure sensor device includes a receptacle part for receiving a carrier substrate. The carrier substrate is located on a first side with a pressure detection unit, and is inserted into the receptacle part with a second side facing away from the first side. The carrier substrate is fixed with its second side on a base of a receptacle groove. In order to construct the pressure detection module as small as possible, and to manufacture it in a cost-effective way, the receptacle part, the receptacle groove and a peripheral flange around the receptacle groove are, for example, provided with a plate-shaped design. The base has a contacting opening, through which contact surfaces of the carrier substrate, which are exposed at the contacting opening, are electrically contactable.

PRESSURE SENSOR DEVICE

A pressure sensor device comprises a support substrate including a thin film area which is bendable by a pressure, a sensor film comprising a first electrode provided on the thin film area, a second electrode provided on the first electrode, a reference layer provided between the first electrode and the second electrode, a free layer provided between the reference layer and the first electrode or between the reference layer and the second electrode, a spacer layer provided between the reference layer and the free layer, a shield provided on a side of the support substrate. 1. A pressure sensor device comprising:a support substrate comprising a thin film area bendable by a pressure and a support part fixing the thin film area;a sensor film comprising a first electrode provided on the thin film area, a second electrode provided on the first electrode, a reference layer provided between the first electrode and the second electrode, a free layer provided between the reference layer and the first electrode or between the reference layer and the second electrode, and a spacer layer provided between the reference layer and the free layer, wherein the magnetization of the free layer is changeable when the thin film area is bent;a shield provided on a side of the support substrate, the shield comprised of a soft magnetic material.2. The device of claim 1 , wherein the support part is formed so as to surround the thin film area.3. The device of claim 1 , a material of the thin film area is different from a material of the support substrate.4. The device of claim 1 , wherein the first electrode and the second electrode are comprised of a soft magnetic material.5. The device of claim 1 , wherein an absolute value of a magnetostrictive constant of the free layer is larger than an absolute value of a magnetostrictive constant of each of the shield claim 1 , the first electrode claim 1 , and the second electrode.6. The device of claim 1 , wherein the shield is comprised of NiFe ...

Method and Apparatus for Fabricating Piezoresistive Polysilicon by Low-Temperature Metal Induced Crystallization

The present invention provides a method and apparatus for fabricating piezoresistive polysilicon on a substrate by low-temperature metal induced crystallization by: (1) providing the substrate having a passivation layer; (2) performing, at or near room temperature in a chamber without breaking a vacuum or near-vacuum within the chamber, the steps of: (a) creating a metal layer on the passivation layer, and (b) creating an amorphous silicon layer on the metal layer, wherein the metal layer and the amorphous silicon layer have approximately the same thickness; (3) annealing the substrate, the passivation layer, the metal layer and the amorphous silicon layer at a temperature equal to or less than 600° C. and a period of time equal to or less than three hours to form a doped polysilicon layer below a residual metal layer; and (4) removing the residual metal layer to expose the doped polysilicon layer.

FLEXIBLE BIMODAL SENSOR

A flexible bimodal sensor includes a gate electrode; a flexible substrate; a source electrode disposed on the flexible substrate; a drain electrode disposed on the flexible substrate apart from the source electrode; a channel layer disposed on the source electrode and the drain electrode and a portion of the flexible substrate between the source electrode and the drain electrode; and a gate insulating layer comprising a plurality of protrusions, the gate insulating layer being disposed on the channel layer and arranged between the channel layer and the gate electrode. The drain electrode outputs a current signal simultaneously indicating a temperature value and a pressure value sensed by the flexible bimodal sensor. 1. A flexible bimodal sensor comprising:a gate electrode;a flexible substrate;a source electrode disposed on the flexible substrate;a drain electrode disposed on the flexible substrate apart from the source electrode;a channel layer disposed on the source electrode and the drain electrode and a portion of the flexible substrate between the source electrode and the drain electrode; anda gate insulating layer comprising a plurality of protrusions, the gate insulating layer being disposed on the channel layer and arranged between the channel layer and the gate electrode and,wherein the drain electrode outputs a current signal simultaneously indicating a temperature value and a pressure value sensed by the flexible bimodal sensor.2. The flexible bimodal sensor of claim 1 , wherein the channel layer comprises one of silicon claim 1 , an organic semiconductor claim 1 , and a semiconductor oxide.3. The flexible bimodal sensor of claim 2 , further comprising an encapsulating layer that covers the channel layer and is disposed between the channel layer and the gate insulating layer.4. The flexible bimodal sensor of claim 3 , wherein the encapsulating layer comprises one of an organic material comprising tetratetracontane (TTC) or methylcycloheane (MCH) claim 3 , ...

VACNT-BASED FLEXIBLE ELECTRONICS FOR SENSING AND CAPACITANCE APPLICATIONS

Flexible and stretchable electronics, including supercapacitors and pressure sensors, are made using carbon nanostructures produced by providing a first composite structure which includes a temporary substrate and an array of carbon nanotubes arranged in a stack on a surface of the temporary substrate such that the stack of carbon nanotubes is oriented generally perpendicular to the surface of the temporary substrate, which may include silicon dioxide. The stack of carbon nanotubes is transferred from the temporary substrate to another substrate, which includes a curable polymer, thereby forming another composite structure comprising the stack of carbon nanotubes and the cured polymer. 1. A method of fabricating a carbon nanotube structure , comprising the steps of:providing a first composite structure which includes a first substrate and an array of carbon nanotubes arranged in a stack on a surface of said first substrate such that said stack of carbon nanotubes is oriented generally perpendicular to said surface of said first substrate and such that each of said carbon nanotubes has a first end embedded in said first substrate and a second end distal to said first substrate;providing a second substrate which includes a curable polymer;partially curing said polymer;placing said stack of carbon nanotubes into contact with said second substrate such that said second end of each of said carbon nanotubes is partially embedded in said second substrate while said polymer is partially cured;fully curing said polymer while said second end of each of said carbon nanotubes is partially embedded in said second substrate, whereby a second composite structure is formed which includes said first substrate, said second substrate and said stack of carbon nanotubes between said first and second substrates; anddelaminating said first substrate from said stack of carbon nanotubes to thereby form a third composite structure which includes said stack of carbon nanotubes and said second ...

PRESSURE SENSOR DEVICE FOR MEASURING A DIFFERENTIAL NORMAL PRESSURE TO THE DEVICE AND RELATED METHODS

A pressure sensor device is to be positioned within a material where a mechanical parameter is measured. The pressure sensor device may include an IC having a ring oscillator with an inverter stage having first doped and second doped piezoresistor couples. Each piezoresistor couple may include two piezoresistors arranged orthogonal to one another with a same resistance value. Each piezoresistor couple may have first and second resistance values responsive to pressure. The IC may include an output interface coupled to the ring oscillator and configured to generate a pressure output signal based upon the first and second resistance values and indicative of pressure normal to the IC. 1. A pressure sensor device to be positioned within a material where a mechanical parameter is measured , the pressure sensor device comprising: a ring oscillator comprising at least one inverter stage comprising first doped and second doped piezoresistor couples,', 'each piezoresistor couple comprising two piezoresistors arranged orthogonal to one another with a same resistance value,', 'each piezoresistor couple having first and second resistance values responsive to pressure, and', 'an output interface coupled to said ring oscillator and configured to generate a pressure output signal based upon the first and second resistance values and indicative of pressure normal to said IC., 'an integrated circuit (IC) comprising'}2. The pressure sensor device of wherein said first doped piezoresistor couple comprises a semiconductor material having a first conductivity type; and wherein said second doped piezoresistor couple comprises semiconductor material having a second conductivity type.3. The pressure sensor device of wherein said output interface comprises a wireless transmitter.4. The pressure sensor device of wherein said output interface comprises a modulator coupled upstream of said wireless transmitter and configured generate the pressure output signal by modulating an output of said ...

PRESSURE SENSOR ELEMENT AND METHOD OF MANUFACTURING THE SAME

A pressure sensor element includes a die; a concave groove formed in one surface of the die; a partition wall formed in the concave groove to be spaced apart from side walls, the partition wall partitioning the concave groove into a trench and a cavity; and a membrane formed on the die and covering the concave groove. 1. A pressure sensor element comprising:a die;a concave groove formed in one surface of the die;a partition wall formed in the concave groove to be spaced apart from side walls, the partition wall partitioning the concave groove into a trench and a cavity; anda membrane formed on the die and covering the concave groove.2. The pressure sensor element of claim 1 , wherein the trench is disposed to enclose the cavity.3. The pressure sensor element of claim 1 , wherein the membrane includes a sensing membrane part formed in a region corresponding to the cavity and an external force blocking membrane part formed in a region corresponding to the trench claim 1 , in relation to a region at which the membrane meets the partition wall.4. The pressure sensor element of claim 3 , wherein a pressure sensing part is formed on the membrane claim 3 , andthe pressure sensing part is disposed on the sensing membrane part.5. The pressure sensor element of claim 4 , wherein a wiring pattern is formed on the die and the membrane claim 4 , and the wiring pattern is electrically connected to the pressure sensing part.6. The pressure sensor element of claim 1 , wherein the membrane is fixed integrally with an upper surface of the partition wall.7. A method of manufacturing a pressure sensor element claim 1 , comprising:forming a trench and a cavity in a die; andforming a membrane to cover the trench and the cavity.8. The method of claim 7 , wherein the forming of the trench and the cavity in the die includes etching the die using a mask on which a slit pattern corresponding to the trench and the cavity is formed.9. The method of claim 7 , wherein the forming of the membrane ...

PRESSURE SENSOR

A pressure sensor according to an embodiment includes: a support member; a membrane supported by the support and having flexibility; and a strain detection element formed on the membrane. The strain detection element includes a first magnetic layer formed on the membrane and having a magnetization, a second magnetic layer having a magnetization, and an intermediate layer formed between the first magnetic layer and the second magnetic layer. A direction of at least one of the magnetization of the first magnetic layer and the magnetization of the second magnetic layer changes relatively to that of the other depending on a strain of the membrane. Moreover, the membrane includes an oxide layer that includes aluminum. 1. A pressure sensor , comprising:a support member;a membrane supported by the support and having flexibility; anda strain detection element formed on the membrane,the strain detection element including a first magnetic layer formed on the membrane and having a magnetization, a second magnetic layer having a magnetization, and an intermediate layer formed between the first magnetic layer and the second magnetic layer, and a direction of at least one of the magnetization of the first magnetic layer and the magnetization of the second magnetic layer changing relatively to that of the other depending on a strain of the membrane, andthe membrane including an oxide layer that includes aluminum.2. The pressure sensor according to claim 1 , whereinthe membrane comprises:a first film mounted with the strain detection element and including an oxide that includes aluminum;a second film positioned on a side of the support and including an oxide that includes aluminum; anda third film sandwiched between the first film and the second film.3. The pressure sensor according to claim 1 , whereinthe membrane comprises: a first film including an oxide that includes aluminum; and a third film, andthe third film is positioned between the first film and the strain detection ...

PRESSURE SENSOR SUITED TO MEASURING PRESSURE IN AN AGGRESSIVE ENVIRONMENT

A pressure sensor to measure low pressures, including: a body extending in a plane, the body including a measurement zone situated at an end of the body, a connection zone situated at another end of the body, the measurement zone including a cavity delimited by a wall, that is deformable under effect of a difference in pressure between inside of the cavity and an external environment, the deformable wall situated at rest in a plane parallel to the plane of the sensor; a mechanism measuring deformation of the deformable wall, the measurement mechanism situated in the cavity; an electrical connection connecting the measurement mechanism to the connection zone, the electrical connection arranged in the body. 118-. (canceled)19. A facility comprising:a medium, a pressure of which is to be measured;a wall separating the medium from an external environment;at least one passage passing through the wall; andat least one pressure sensor configured to measure at least low pressures, comprising a body extending in a sensor plane, the body comprising a first end and a second end, a measurement zone, located at the first end of the body, a connection zone located at the second end of the body, the measurement zone comprising at least one cavity delimited by at least one wall being movable or deformable under effect of a pressure difference between inside of the cavity and an external medium, the movable or deformable wall being located at least at rest in a plane parallel to the sensor plane;the pressure sensor further comprising:a measurement device measuring displacement or deformation of the movable or deformable wall, the measurement device being located in the cavity,at least one electrical connector connecting the measurement device to the connection zone, the at least one electrical connector being disposed in the body, the body configured to be disposed at least partly in the medium such that the first end is in the medium, and the connection zone configured to be ...

SYSTEM AND METHOD FOR SECURING SENSE DIE IN FORCE SENSOR

A force sensor may comprise a sense die comprising a top part and a bottom part. Generally, the top part may comprise a first surface and a second surface, and the bottom part may comprise a first surface for direct contact with a substrate. Typically, the bottom part may be formed by removing a portion of the material of the sense die around the edges of a first face of the sense die. Typically, adhesive may replace the portion of the sense die material removed from the edges of the first face of the sense die. Thus, the adhesive may secure the first surface of the bottom part of the sense die directly to the substrate without serving as an interface between the bottom part of the sense die and the substrate. 1. A method for assembling a force sensor , the method comprising:removing sense die material from a bottom portion of a sense die while not removing sense die material from a top portion of the sense die, the sense die material being removed around the edges of a bottom face of the sense die leaving sense die material at the center to form a bottom support;applying sense elements to the top portion of the sense die;applying to the sense die adhesive to where the sense die material was removed; andsecuring, using the adhesive, the sense die to a substrate with the bottom support of the sense die situated between the top portion of the sense die and the substrate.2. The method of claim 1 , wherein removing sense die material from the sense die around the edges of the bottom face of the sense die comprises etching the sense die material.3. The method of claim 1 , wherein the bottom face of the sense die along the bottom of the bottom support remains free of adhesive after the sense die is secured to the substrate.4. The method of claim 1 , wherein the adhesive is applied to laterally facing side walls of the bottom support of the sense die revealed as a result of the sense die material being removed.5. The method of claim 1 , wherein etching of the edges of the ...

Electronic Devices with Submersion Detection Circuitry

A portable electronic device may include submersion detection circuitry for detecting when the electronic device is submerged in water or other liquids. The submersion detection circuitry may include a barometric pressure sensor that gathers air pressure information. Control circuitry in the electronic device may monitor the air pressure sensor for sharp changes in air pressure indicating that the electronic device has been dropped or submerged in water. Various actions may be taken in response to determining that the electronic device is in water. If the electronic device is not intended to operate underwater, a power management unit may automatically power down electrical components in the electronic device in response to determining that the electronic device is in water. If the electronic device is intended to operate underwater, control circuitry may determine and track a water depth level at which the electronic device is submerged based on the air pressure information. 1. A portable electronic device having a housing , comprising:at least one electrical component mounted in the housing;an air pressure sensor in the housing that gathers air pressure information; andcontrol circuitry that determines whether the portable electronic device is in water based on the air pressure information and that automatically powers down the at least one electrical component in response to determining that the portable electronic device is in water.2. The portable electronic device defined in wherein the at least one electrical component is a display module.3. The portable electronic device defined in wherein the control circuitry comprises a power management unit.4. The portable electronic device defined in wherein the air pressure sensor comprises a piezo-resistive pressure sensor.5. The portable electronic device defined in wherein the air pressure sensor and the power management unit are mounted to a printed circuit board in the electronic device and wherein the printed ...

Method of Making a Dual-Cavity Pressure Sensor Die

A pressure sensor die especially suitable for high-temperature, high-pressure operating environment and delivering accurate and reliable pressure measurement at low cost. A single crystalline silicon includes a cap, a substrate and a base connected together. A recess formed on the cap creates an upper sealed cavity with the substrate. A silicon oxide layer is formed between the substrate and the cap. A recess formed on the base creates a lower sealed cavity with the substrate. The upper sealed cavity and the lower sealed cavity overlap in their projections. The substrate includes at least two sets of piezoresistive sensing elements located within the overlapping projections, perpendicular to each other, and oriented in different crystallographic directions. 1. A pressure sensor die fabrication process comprising the following steps:Step 1, grow or deposit a silicon oxide layer on the top surface of a substrate silicon wafer;Step 2, using photolithography and ion implantation, dope selective regions on the top surface of said substrate silicon wafer, thus forming a plurality of piezoresistive sensing elements with the opposite dopant type to said substrate silicon wafer;Step 3, using photolithography and ion implantation, highly dope selective regions on the top surface of said substrate silicon wafer, thus forming highly conductive regions with the opposite dopant type to said substrate silicon wafer;Step 4, using photolithography and ion implantation, highly dope selective regions on the top surface of said substrate silicon wafer, thus forming highly conductive regions with the same dopant type as said substrate silicon wafer; afterward grow or deposit a silicon oxide layer on the top surface of said substrate silicon wafer; and activate said implanted dopant species in said piezoresistive sensing elements, said highly conductive regions with the opposite dopant type to said substrate silicon wafer, and said highly conductive regions with the same dopant type as ...

PRESSURE SENSOR

A pressure sensor according to the present invention includes a diaphragm () including a first principal surface (A) and a second principal surface (B) that is opposite thereto, the first principal surface receiving a pressure of a fluid; a semiconductor chip () provided with resistors that constitute a strain gauge; and at least three support members () made of an insulating material, each support member being fixed to the second principal surface at one end thereof and to the semiconductor chip at the other end thereof and extending perpendicularly to the second principal surface so as to support the semiconductor chip. One of the support members () is provided at a center () of the diaphragm in plan view. At least two of the other support members () are provided at positions point-symmetrical about the center of the diaphragm in plan view in a region in which the diaphragm is deformed when a pressure greater than a pressure applied to the second principal surface is applied to the first principal surface. 1. A pressure sensor comprising:a diaphragm including a first principal surface and a second principal surface, the first principal surface receiving a pressure of a fluid that serves as a measurement object the second principal surface being opposite to the first principal surface;a semiconductor chip having a rectangular shape and provided with resistors that constitute a strain gauge; andat least three support members made of an insulating material each support member being fixed to the second principal surface at one end thereof and to the semiconductor chip at the other end thereof and extending perpendicularly to the second principal surface so as to support the semiconductor chip,wherein one of the support members is provided at a center of the diaphragm in plan view,wherein at least two of the other support members are provided in a region in which the diaphragm is deformed when a pressure greater than a pressure applied to the second principal surface ...

PHYSICAL QUANTITY SENSOR

A physical quantity sensor detects a physical quantity using a piezoresistive effect and includes a first-conductivity-type well layer disposed on a first insulating layer, a plurality of second-conductivity-type piezoresistive layers disposed on a surface side of the first-conductivity-type well layer, and a second-conductivity-type isolation layer disposed between the plurality of second-conductivity-type piezoresistive layers so as to pass through the first-conductivity-type well layer from a surface of the first-conductivity-type well layer to a surface of the first insulating layer. 1. A physical quantity sensor which detects a physical quantity using a piezoresistive effect , comprising:a first-conductivity-type well layer disposed on a first insulating layer;a plurality of second-conductivity-type piezoresistive layers disposed on a surface side of the first-conductivity-type well layer; anda second-conductivity-type isolation layer disposed between the plurality of second-conductivity-type piezoresistive layers so as to pass through the first-conductivity-type well layer from a surface of the first-conductivity-type well layer to a surface of the first insulating layer.2. The physical quantity sensor according to claim 1 , wherein the plurality of second-conductivity-type piezoresistive layers include a first piezoresistive layer disposed at a position close to a power source pad and a second piezoresistive layer disposed at a position far from the power source pad;a bridge circuit is constituted by a first piezoresistive element including the first piezoresistive layer and a second piezoresistive element including the second piezoresistive layer; andthe isolation layer is disposed between the first piezoresistive element and the second piezoresistive element.3. The physical quantity sensor according to claim 1 , wherein the second-conductivity-type isolation layer is disposed so as to surround the first-conductivity-type well layer.4. The physical quantity ...

FLEXIBLE TWO-DIMENSIONAL SHEET ARRAY OF ELECTRONIC SENSOR DEVICES

A flexible electronic sensor array apparatus comprising: a continuous flexible sheet having a length defining a first axis, a width defining a second axis and a thickness comprising a third axis; wherein the flexible sheet comprises multiple flexible sheet layers formed of one or more flexible materials stacked along the third axis; a plurality of electronic sensors disposed within the flexible sheet, each respective sensor comprising at least two conductive pattern layers, the two conductive pattern layers of the respective sensor spaced apart from one another along the third axis by one of the flexible sheet layers interposed between the conductive pattern layers; and wherein each respective sensor of the plurality of sensors is disposed at a different respective position along the first axis or the second axis of the flexible sheet from the remaining sensors, thereby forming an array of sensors spaced along the first and second axes. 1. A flexible electronic sensor array apparatus comprising:a continuous flexible sheet having a length defining a first axis, a width defining a second axis and a thickness comprising a third axis;wherein the flexible sheet comprises multiple flexible sheet layers formed of one or more flexible materials stacked along the third axis;a plurality of electronic sensors disposed within the flexible sheet, each respective sensor comprising at least two conductive pattern layers formed of an electrically conductive material, the two conductive pattern layers of the respective sensor being spaced apart from one another along the third axis by at least one of the flexible sheet layers interposed between the conductive pattern layers; andwherein each respective sensor of the plurality of sensors is disposed at a different respective position along at least one of the first axis and the second axis of the flexible sheet from the remaining sensors, thereby forming an array of sensors spaced along the first and second axes within the flexible ...

Ultra-Miniature Multi-Hole Flow Angle Probes

This disclosure provides example methods, devices, and systems for an ultra-miniature, multi-hole flow angle probe. The construction, packaging of a multitude of absolute and or differential pressure transducers or sensors are invented for the purpose of providing highly accurate measurement of flow properties, flow angle in particular. The unique placement of sensors leads to further miniaturization relative to current state of the art. Further the use of closely coupled, differential transducer or transducers achieves higher accuracy measurement of small pressure variations coupled with large mean or average baseline pressures, as is demanded in modern aerodynamic or turbo-machinery devices. The use and installation of ultra-miniature sensors insider the device invented herein achieves higher frequency response than allowable via previous state of the part. 1. A probe , comprising:a housing having a front portion with a first oblique side and a second oblique side;a first aperture and a second aperture, wherein the first aperture is disposed on the first oblique side and the second aperture is disposed on the second oblique side;a first transducer disposed in the housing and proximate the first aperture, wherein the first transducer is configured to measure a first environmental condition received at the first aperture;a second transducer disposed in the housing and proximate the second aperture, wherein the second transducer is configured to measure a second environmental condition received at the second aperture; andwherein the width of the housing is less than about five-tenths of an inch and the length is less than about three inches.2. The probe of claim 1 , further comprising:a first tube having a first end and a second end, wherein the first end of the first tube is coupled to the first aperture and the second end of the first tube is coupled to the first transducer; anda second tube having a first end and a second end, wherein the first end of the second ...

PRESSURE SENSOR SYSTEM

A pressure sensor system with at least two absolute pressure sensors can have an external sensor with a pressure sensitive surface in contact with atmospheric pressure (proximal) and internal sensors each with a pressure sensitive surface in contact with one or more regions at an unknown pressure (distal). The unknown pressure is determined by a means to calculate the difference between the first sensor and the internal sensors. 1. A differential pressure sensor system with at least two absolute pressure sensors comprisingan external absolute pressure sensor with a pressure sensitive surface in contact with atmospheric pressure;at least one internal absolute pressure sensor, each internal absolute pressure sensor with a pressure sensitive surface in contact with one or more regions at an unknown pressure; anda means to calculate a difference between the external sensor and at least one internal absolute pressure sensor to derive the pressure in one or more regions.2. The differential pressure sensor system of wherein the at least one internal absolute pressure sensor is located along the length of a catheter away from the proximal end of the catheter claim 1 , and the external absolute pressure sensor is located at or near the proximal end of the catheter.3. The differential pressure sensor system of claim 2 , wherein the catheter is filled with a filler material.4. The differential pressure sensor system of wherein a pressure signal derived from the external absolute pressure sensor is subtracted from pressure signals from each internal absolute pressure sensor and a result is interpreted as the differential pressure of each region with respect to atmospheric pressure.5. The differential pressure sensor system of wherein the external absolute pressure sensor and the at least one internal absolute pressure sensor are a piezo-resistive MEMs sensor.6. The differential pressure sensor system of wherein each absolute pressure sensor is part of a Wheatstone bridge ...

Pressure sensor

To suppress variations in the shift amount of the zero point of a sensor output when a pipe is connected to a pressure sensor via a clamp. A pressure sensor includes two semiconductor chips in two straight lines, orthogonal to each other, that pass through a center of a diaphragm in plan view, two resistors in the region between two supporting members supporting one semiconductor chip, and two other resistors in the region between two other supporting members supporting the other semiconductor chip.

Pressure sensor

A pressure sensor includes a diaphragm having a first principal surface and a second principal surface, a semiconductor chip in which resistors constituting a strain gauge are formed, a first structural body having one end coupled to a center of a second principal surface of the diaphragm and the other end coupled to the other surface of the semiconductor chip, and at least two second structural bodies disposed in two straight lines, orthogonal to each other, that pass through the center of the diaphragm in plan view so as to be disposed separately from the first structural body, and having one ends coupled to the second principal surface and the other ends coupled to the other surface of the semiconductor chip, in which the resistors are formed in regions between the first structural body and the second structural bodies in plan view in the semiconductor chip.

PRESSURE SENSOR

If the bridge circuit fails due to damage of the diaphragm, the damage is detected at an early stage. A pressure sensor comprises: a substrate provided with a diaphragm; a bridge circuit having four resistor devices provided at the diaphragm, the bridge circuit being applied with high-voltage-side voltage and low-voltage-side voltage, and having two output terminals; a detecting unit for detecting a first output at a first output terminal and a second output at a second output terminal, each output terminal being of the bridge circuit; and a failure detecting unit for detecting failure of the bridge circuit based on a detection result at the detecting unit. 1. A pressure sensor , comprising:a substrate provided with a diaphragm;a bridge circuit having four resistor devices provided at the diaphragm, the bridge circuit being applied with high-voltage-side voltage and low-voltage-side voltage, and having two output terminals;a detecting unit for detecting a first output at a first output terminal and a second output at a second output terminal, each output terminal being of the bridge circuit; anda failure detecting unit for detecting failure of the bridge circuit based on a detection result by the detecting unit.2. The pressure sensor according to claim 1 , whereinthe failure detecting unit determines that the bridge circuit is in failure when at least one of the first output and the second output is out of a predetermined range, which includes an intermediate voltage between the high-voltage-side voltage and the low-voltage-side voltage.3. The pressure sensor according to claim 2 ,wherein the failure detecting unit further comprises a voltage control unit for varying at least one of the high-voltage-side voltage and the low-voltage-side voltage so that the intermediate voltage between the high-voltage-side voltage and the low-voltage-side voltage varies when the first output and the second output are within a predetermined range, which includes the intermediate ...

PRESSURE DETECTION DEVICE

Provided is a pressure detection device which includes: a pressure detection unit configured to detect a pressure transmitted to a diaphragm; a flow passage unit in which a flow passage and a diaphragm are formed, a fluid being made to flow through the flow passage along a flow direction from an inflow port to an outflow port, and the diaphragm being configured to transmit a pressure of the fluid flowing through the flow passage to the diaphragm; and a nut configured to allow the flow passage unit to be detachably mounted on the pressure detection unit. The pressure detection unit includes a mounting detection sensor configured to detect that the flow passage unit is mounted on the pressure detection unit in a state where the diaphragm and the diaphragm are in contact with each other. 1. A pressure detection device comprising:a pressure detection unit configured to detect a pressure transmitted to a pressure detection surface;a flow passage unit in which a flow passage and a pressure transmitting surface are formed, a fluid being made to flow through the flow passage along a flow direction from an inflow port to an outflow port, the pressure transmitting surface being configured to transmit a pressure of the fluid flowing through the flow passage to the pressure detection surface; anda mounting mechanism configured to allow the flow passage unit to be detachably mounted on the pressure detection unit, wherein:the pressure detection unit includes a detection part configured to detect that the flow passage unit is mounted on the pressure detection unit in a state where the pressure detection surface and the pressure transmitting surface are in contact with each other.2. The pressure detection device according to claim 1 , wherein:the pressure detection unit includes a pair of guide parts having groove portions configured to guide a portion of the flow passage on an inflow port side and a portion of the flow passage on an outflow port side to a predetermined mounting ...

PNEUMATIC SENSOR AND ELECTRONIC CIGARETTE HAVING SAME

The invention discloses a pneumatic sensor and an electronic cigarette having same, wherein the pneumatic sensor comprises a main body, a trigger component and a waterproof and breathable membrane, wherein the main body is provided with an internal cavity and at least one suction hole communicated with the internal cavity, the waterproof and breathable membrane is mounted in the main body and covers each of the suction holes, and the triggering component is mounted in the internal cavity and is triggered when the airflow is sucked from the suction hole to the outside. The technical solution of the invention effectively prevents the phenomenon that tobacco liquid and condensed water penetrate into the sensor, thereby causing damage to the sensor. 1. A pneumatic sensor comprising a main body , a trigger component and a waterproof and breathable membrane , wherein the main body is provided with an internal cavity and at least one suction hole communicated with the internal cavity , the waterproof and breathable membrane is mounted in the main body and covers each of the at least one suction hole , and the triggering component is mounted in the internal cavity and is triggered when the airflow is sucked from the suction hole to outside.2. The pneumatic sensor according to claim 1 , wherein the waterproof and breathable membrane comprises an anti-wrinkle ring and a substrate having waterproof and breathable property claim 1 , the anti-wrinkle ring covers the edge of the substrate so that when the substrate is mounted in the main body claim 1 , a middle part of the substrate which does not cover the anti-wrinkle ring covers each of the at least one suction hole claim 1 , and forms a breathable part claim 1 , and the breathable part is communicated with the suction hole through an air channel.351. The pneumatic sensor according to claim 2 , wherein the waterproof and breathable membrane further comprises an adhesive layer claim 2 , the adhesive layer is provided on a ...

HIGH TEMPERATURE PROTECTED WIRE BONDED SENSORS

Systems and methods are disclosed for packaging sensors for use in high temperature environments. In one example implementation, a sensor device includes a header; one or more feedthrough pins extending through the header; and a sensor chip disposed on a support portion of the header. The sensor chip includes one or more contact pads. The sensor device further includes one or more wire bonded interconnections in electrical communication with the respective one or more contact pads and the respective one or more feedthrough pins. The sensor device includes a first sealed enclosure formed by at least a portion of the header. The first sealed enclosure is configured for enclosing and protecting at last the one or more wire bonded interconnections and the one or more contact pads from an external environment. 1. A method , comprising:positioning one or more feedthrough pin assemblies in a sensor header, each of the one or more feedthrough pin assemblies comprising a feedthrough pin and a respective pin insert, the sensor header comprising a sensor support portion, one or more feedthrough pin apertures extending through the sensor header, and respective one or more feedthrough pin contact pads that are electrically isolated from the sensor header;electrically connecting the one or more feedthrough pin assemblies to the respective one or more feedthrough pin contact pads of the sensor header;securing, with electrically isolating seals, the one or more feedthrough pin assemblies to the respective one or more feedthrough pin apertures in the sensor header;mounting a sensor chip to the sensor support portion of the sensor header, wherein the sensor chip comprises one or more sensor contact pads; andelectrically connecting the one or more sensor contact pads of the sensor chip directly to the respective one or more feedthrough pin contact pads of the sensor header.2. The method of claim 1 , further comprising:inserting each feedthrough pin of the one or more feedthrough pin ...

Pressure sensor with built in stress buffer

A semiconductor pressure sensor comprising: a semiconductor substrate having a through-opening extending from a top surface to a bottom surface of the substrate, the through-opening forming a space between an inner part and an outer part of said substrate; a pressure responsive structure arranged on said inner part; a number of flexible elements extending from said inner part to said outer part for suspending the inner part within said through-opening; the through-opening being at least partly filled with an anelastic material. A method of producing such a semiconductor pressure sensor.

PRESSURE SENSOR DEVICE AND MANUFACTURING METHOD

A manufacturing method includes providing a semiconductor substrate having a pressure sensor structure; and forming, during a BEOL process (BEOL=back-end-of-line), a metal-insulator-stack arrangement on the semiconductor substrate, wherein the metal-insulator-stack arrangement is formed to comprise (1) a cavity adjacent to the pressure sensor structure and extending over the pressure sensor structure, and (2) a pressure port through the metal-insulator-stack arrangement for providing a fluidic connection between the cavity and an environmental atmosphere, wherein the pressure port has a cross-sectional area, which is smaller than 10% of a footprint area of the pressure sensor structure within the cavity. 1. A manufacturing method , comprising:providing a semiconductor substrate having a pressure sensor structure; and a cavity adjacent to the pressure sensor structure and extending over the pressure sensor structure; and', 'a pressure port through the metal-insulator-stack arrangement for providing a fluidic connection between the cavity and an environmental atmosphere, wherein the pressure port has a cross-sectional area, which is smaller than 10% of a footprint area of the pressure sensor structure., 'forming, during a BEOL process (BEOL=back-end-of-line), a metal-insulator-stack arrangement on the semiconductor substrate, wherein the metal-insulator-stack arrangement is formed to comprise2. The method according to claim 1 , wherein the step of forming claim 1 , during the BEOL process claim 1 , the metal-insulator-stack arrangement further comprises:forming, during the BEOL process, a metal-insulator-stack on the semiconductor substrate, wherein the metal-insulator-stack comprises a recess which is adjacent to the pressure sensor structure and extends over the pressure sensor structure, the recess being at least partially filled with a sacrificial material;forming an access port through the metal-insulator-stack to the sacrificial material in the recess; ...

Hydraulic Pressure Sensor For A Vehicle

A hydraulic pressure sensor for a vehicle comprises a sensor housing which comprises a fluid chamber, a sensor element for detecting the pressure of a fluid in the fluid chamber, and an electronic signal processing component which is electrically connected to the sensor element, for processing an electric signal characterizing the fluid pressure. Electrically conductive contacts for forwarding the electric signals processed by the electronic signal processing components are formed on an external main surface of the sensor housing. 1. A hydraulic pressure sensor for a vehicle , havinga sensor housing, which has a fluid chamber;a deformable element adjoining the fluid chamber;a sensor element for sensing the pressure of a fluid in the fluid chamber, which is arranged on the deformable element on the side of the deformable element that is facing away from the fluid chamber;and an electronic signal processing component, which is electrically connected to the sensor element and is intended for processing an electrical signal characteristic of the fluid pressure, characterized in thatelectrically conducting contacts for passing on the electrical signal processed by the electronic signal processing component, the electronic signal processing component and the sensor element are arranged on a common outer area of the sensor housing that is part of the outer surface of the sensor housing.2. The hydraulic pressure sensor according to claim 1 , wherein the sensor element is arranged lying between the electronic signal processing component and the fluid chamber formed in the sensor housing.3. The hydraulic pressure sensor as according to claim 1 , wherein the sensor housing has a fluidic connection area for fluidically connecting the fluid chamber formed in the sensor housing to a fluid channel of a hydraulic control unit.4. The hydraulic pressure sensor according to claim 3 , wherein the outer area of the sensor housing on which the electrically conducting contacts are formed ...

SENSOR AND ELECTRONIC DEVICE

According to one embodiment, a sensor includes a first film, a first sensor portion, and first to fourth terminals. The first film includes first to second electrode layers, and a piezoelectric layer. The first film is deformable. The first sensor portion is fixed to a portion of the first film. A first direction from the portion of the first film toward the first sensor portion is aligned with a direction from the second electrode layer toward the first electrode layer. The first sensor portion includes first to second sensor conductive layers, first to second magnetic layers, and a first intermediate layer. The first terminal is electrically connected to the first electrode layer. The second terminal is electrically connected to the second electrode layer. The third terminal is electrically connected to the first sensor conductive layer. The fourth terminal is electrically connected to the second sensor conductive layer. 1. A sensor , comprising:a first film including a first electrode layer, a second electrode layer, and a piezoelectric layer provided between the first electrode layer and the second electrode layer, the first film being deformable;a first sensor portion fixed to a portion of the first film, a first direction from the portion of the first film toward the first sensor portion being aligned with a direction from the second electrode layer toward the first electrode layer, the first sensor portion including a first sensor conductive layer, a second sensor conductive layer, a first magnetic layer provided between the first sensor conductive layer and the second sensor conductive layer, a second magnetic layer provided between the first magnetic layer and the second sensor conductive layer, and a first intermediate layer provided between the first magnetic layer and the second magnetic layer;a first terminal electrically connected to the first electrode layer;a second terminal electrically connected to the second electrode layer;a third terminal ...

PRESSURE SENSOR, PRODUCTION METHOD FOR PRESSURE SENSOR, PRESSURE SENSOR MODULE, ELECTRONIC APPARATUS, AND VEHICLE

A pressure sensor includes a semiconductor substrate, an insulating layer which is placed on the semiconductor substrate and is provided with a cavity section, and a semiconductor layer which is placed on the insulating layer and includes a diaphragm that is placed so as to cover the cavity section. The diaphragm includes a through-hole which communicates with the cavity section. 1. A pressure sensor , comprising:a semiconductor substrate;an insulating layer which is placed on one surface of the semiconductor substrate and is provided with a cavity section; anda semiconductor layer which is placed on the opposite side to the semiconductor substrate of the insulating layer and includes a diaphragm that is placed so as to cover the cavity section.2. The pressure sensor according to claim 1 , whereinthe diaphragm includes a through-hole which communicates with the cavity section and has a sealing section which seals the through-hole.3. The pressure sensor according to claim 2 , wherein in a plan view of the semiconductor substrate claim 2 , a plurality of through-holes are placed along the outer edge of the diaphragm.4. The pressure sensor according to claim 1 , wherein the pressure sensor has a piezoresistive element placed in the diaphragm.5. The pressure sensor according to claim 1 , wherein the pressure sensor has an edge section which is placed on an inner circumferential surface facing the cavity section of the insulating layer and surrounds at least a part of the cavity section in a plan view of the semiconductor substrate.6. The pressure sensor according to claim 1 , whereinthe semiconductor substrate contains silicon,the insulating layer contains silicon oxide, andthe semiconductor layer contains silicon.7. A production method for a pressure sensor claim 1 , comprising:preparing an SOI substrate which has a first silicon layer, a second silicon layer, and an oxide silicon layer located between the first silicon layer and the second silicon layer;placing a ...

Sensor device, and sensor system configured to determine abnormalities in a signal processing circuit and in a pressure-temperature detection unit by changing a supply voltage

A sensor device changes a supply voltage, and examines whether output signals of a signal processing circuit including a pressure signal and a temperature signal change in a manner that follows the supply voltage change caused by a voltage variation control unit, for a determination of whether a signal processing circuit is normal or abnormal.

CMOS COMPATIBLE CAPACITIVE ABSOLUTE PRESSURE SENSORS

Monolithic integration of microelectromechanical systems (MEMS) sensors with complementary oxide semiconductor (CMOS) electronics for pressure sensors is a very challenging task. This is primarily due to the requirement for a very high quality thin diaphragm to provide the pressure dependent MEMS deformation that can be sensed and, when seeking absolute rather than relative pressure sensors, a sealed reference cavity. Accordingly, a new manufacturing process is established based upon back-etching and bonding of a monolithic absolute silicon carbide (SiC) capacitive pressure sensor. Beneficially, the process embeds the critical features of the MEMS within a shallow trench formed within the silicon substrate and then processing the CMOS circuit. The process further benefits as it maintains that those elements of the MEMS element fabrication process that are CMOS compatible are implemented concurrently with those CMOS steps as well as the metallization steps. However, the CMOS incompatible processing is partitioned discretely. 1. A method comprising:manufacturing a first portion of a microelectromechanical systems (MEMS) element for monolithic integration with a complementary oxide semiconductor (CMOS) integrated circuit (IC) using a high temperature MEMS processing process;manufacturing the CMOS integrated circuit;manufacturing a second portion of the MEMS element at least one of during and subsequent to the CMOS integrated circuit; whereinthe second portion of the MEMS element is formed with a low temperature MEMS processing.2. The method according to claim 1 , whereinthe first portion of the MEMS element is formed within a trench formed within the surface of a substrate within which the CMOS element is subsequently formed.3. The method according to claim 1 , whereinthe first portion of the MEMS element is formed within a trench formed within a substrate within which the CMOS element is to be formed; andthe surface of the substrate is planarized post-formation of the ...

PRESSURE SENSOR

An object of the present invention is to realize a pressure sensor with a small variation in sensor characteristics. The pressure sensor includes a diaphragm having longitudinal and lateral sides, and four strain gauges disposed on the diaphragm. The four strain gauges are arranged at a center of the diaphragm. Two of the four strain gauges are arranged along a lateral direction, and other two strain gauges are arranged along a longitudinal direction. 1. A pressure sensor comprising a diaphragm having longitudinal and lateral sides , and four strain gauges disposed on the diaphragm , wherein:the four strain gauges are arranged at a center of the diaphragm; andtwo of the four strain gauges are arranged along a lateral direction, and other two strain gauges are arranged along a longitudinal direction.2. The pressure sensor according to claim 1 , wherein the diaphragm is configured to have a maximum dimension in the lateral direction claim 1 , which is defined by a center and an end portion of the diaphragm in the longitudinal direction larger than a dimension in the lateral direction at a position around the center in the longitudinal direction.3. A pressure sensor comprising a diaphragm having longitudinal and lateral sides claim 1 , a sensor chip formed on the diaphragm claim 1 , and four strain gauges disposed on the sensor chip claim 1 , wherein:the sensor chip is applied on the diaphragm so that the four strain gauges are positioned at a center of the diaphragm; andtwo of the four strain gauges are arranged along a lateral direction, and other two strain gauges are arranged along a longitudinal direction.4. The pressure sensor according to claim 3 , wherein the diaphragm is configured to have a maximum dimension in the lateral direction claim 3 , which is defined by a center and an end portion of the diaphragm in the longitudinal direction larger than a dimension in the lateral direction at a position around the center in the longitudinal direction.5. The ...

LOW-STRESS FLOATING-CHIP PRESSURE SENSORS

Systems and methods are disclosed for a pressure sensor device. The pressure sensor device includes a header that defines an interior cavity including one or more tether connecting regions. The header further defines an outer portion in communication with the interior cavity; the outer portion includes a plurality of through bores in communication with an exterior portion of the header for insertion of header pins through the header. The pressure sensor device includes a pressure sensor chip disposed within the interior cavity of the header. One or more anchoring tethers are attached to the corresponding one or more tether connecting regions. The pressure sensor chip is free to move within the interior cavity of the header, and the one or more anchoring tethers are in communication with the pressure sensor chip and are configured to limit movement of the pressure sensor chip within the header. 1. A pressure sensor device comprising: an interior cavity comprising one or more tether connecting regions;', 'an outer portion in communication with the interior cavity, the outer portion comprising a plurality of through bores; and', 'an exterior portion;, 'a header, the header defininga pressure sensor chip disposed within the interior cavity of the header; andone or more anchoring tethers attached to the corresponding one or more tether connecting regions;wherein the pressure sensor chip is free to move within the interior cavity of the header, and wherein the one or more anchoring tethers are in communication with the pressure sensor chip and are configured to limit movement of the pressure sensor chip within the header.2. The pressure sensor device of claim 1 , further comprising a plurality of conductive header pins extending from the exterior portion of the header and through the corresponding plurality of through bores claim 1 , and wherein the header pins are sealed to the header.3. The pressure sensor device of claim 2 , wherein the pressure sensor chip comprises a ...

MICRO MECHANICAL DEVICES WITH AN IMPROVED RECESS OR CAVITY STRUCTURE

A sensor includes a first substrate and a second substrate. The first substrate includes a first side and an opposing second side, with the first side having a recess. The recess is defined by one or more side walls and a bottom wall. One or more of the side walls are substantially perpendicular to the bottom wall. A sensing diaphragm is defined between the second side of the first substrate and the bottom wall of the recess. A boss extends from the bottom wall of the recess. The second substrate may include a first side and an opposing second side, where the first side has a recess. The first side of the first substrate may be secured to the first side of the second substrate such that the recess in the first substrate faces and is in fluid communication with the recess in the second substrate. 120-. (canceled)21. A sensor , comprising: a first side and an opposing second side, the first side having a recess;', 'the recess defined by one or more side walls and a bottom wall, wherein the one or more side walls are substantially perpendicular to the bottom wall;', 'a sensing diaphragm defined between the second side of the first substrate and the bottom wall of the recess;', 'a boss extending from the bottom wall of the recess and into the recess, the boss defined by side walls, wherein the side walls of the boss are substantially perpendicular to the bottom wall of the recess;, 'a first substrate comprising a first side and an opposing second side;', 'the first side having a recess;, 'a second substrate comprisingwherein the first side of the first substrate is secured to the first side of the second substrate such that the recess in the first substrate faces and is in fluid communication with the recess in the second substrate;wherein the sensing diaphragm is positioned above the boss, wherein an oxide layer is positioned between the sensing diaphragm and the boss.22. The sensor of claim 21 , wherein the recess in the second substrate is in registration with the ...

Sensor for detecting pressure, filling level, density, temperature, mass and/or flow rate

A sensor for detecting pressure, filling level, density, temperature, mass and/or flow rate, wherein at least one central sensor component is coupled to a further component by nanowires and wherein the sensor component is stiffened, fixed and/or electrically contacted this way.

PRESSURE GAUGE COMPRISING A DEVICE FOR DEFLECTING AN ISOLATION DIAPHRAGM

Disclosed is a pressure gauge comprising a pressure sensor, a pressure transmitter connected upstream of the pressure sensor and having an isolation diaphragm, the outer side of which can be supplied with pressure and under which a pressure receiving chamber is enclosed, and comprising a hydraulic pressure transmission path connected to the pressure receiving chamber and filled with a pressure transmitting fluid. The diaphragm seal comprises a deflection device actuated by a controller connected to the pressure sensor and/or to a temperature sensor, and which is designed to exert a force on the isolation diaphragm, or on an element connected to the isolation diaphragm, said force deflecting the isolation diaphragm in the direction of its diaphragm bed, at times that are determined by the controller and that are based on a pressure measured continuously by the pressure sensor and/or a temperature measured continuously by the temperature sensor. 114-. (canceled)15. A pressure gauge , comprising:a pressure sensor;a pressure transmitter connected upstream of the pressure sensor and having an isolation diaphragm, to the outer side of which a pressure can be applied and beneath which a pressure receiving chamber is enclosed; anda hydraulic pressure transmission path which is connected to the pressure receiving chamber and filled with a pressure transmitting fluid, and which transmits to the pressure sensor the pressure acting on the outer side of the isolation diaphragm,wherein the pressure transmitter includes a deflection device which can be controlled by means of a controller connected to the pressure sensor and/or to a temperature sensor and which is designed to apply a force to the isolation diaphragm, or to an element connected to the isolation diaphragm, said force deflecting the isolation diaphragm in the direction of its diaphragm bed, at times that are determined by the controller and that are based on a pressure measured continuously by the pressure sensor and/ ...

PRESSURE SENSOR

A pressure sensor () includes a diaphragm (); a semiconductor chip () that includes a plurality of resistors (R to R) constituting a strain gauge and that has a square shape in plan view; four first structures (to ) each having one end joined to a region of the second main surface of the diaphragm that is deformed when a pressure is applied to a first main surface (A) of the diaphragm and having other ends respectively connected to four corners of the semiconductor chip, the first structures extend downward to a second main surface (B); and a second structure () having one end joined to a center () of the diaphragm on the second main surface in plan view and having the other end joined to a center () of the semiconductor chip in plan view, the second structure extending downward to the second main surface. 1. A pressure sensor comprising:a diaphragm that has a first main surface that receives a pressure of a measurement object fluid and a second main surface opposite to the first main surface;a semiconductor chip that has one surface on which a plurality of resistors that constitute a strain gauge are formed, the semiconductor chip having a square shape in plan view;four first structures that each have one end joined in a region of the second main surface in which the diaphragm is deformed when a pressure larger than a pressure applied to the second main surface is applied to the first main surface and that have other ends respectively connected to four corners of an other surface of the semiconductor chip, the four first structures extending downward to the second main surface; anda second structure that has one end joined to a center of the diaphragm on the second main surface in plan view and that has an other end joined to a center of the other surface of the semiconductor chip in plan view, the second structure extending downward to the second main surface,wherein the plurality of resistors are formed on a periphery of a circle that shares a center with the ...

PRESSURE SENSOR HAVING A HELMHOLTZ RESONATOR

This disclosure provides example methods, devices, and systems for a sensor having a Helmholtz resonator. In one embodiment, a system may comprise a sensing element; a header coupled to the sensing element; a housing coupled to the header; an adapter coupled to the housing; a screen disposed in an opening of the housing, wherein a first cavity is disposed between the screen and the sensing element and a second cavity is disposed between the adapter and the sensing element, and the screen in combination with the first cavity and the second cavity form a Helmholtz resonator. 1. A method , comprising:providing a sensing element having a front-side and a back-side;coupling a header to the back-side of the sensing element;coupling a housing to the header;coupling an adapter to the housing; andforming a first cavity between at least a portion of the adapter and the sensing element such that at least the front-side of the sensing element is isolated from a stress applied at the adapter.2. The method of claim 1 , further comprising securing the adapter to the housing.3. The method of claim 1 , wherein forming the first cavity defines a first gap between the sensing element and the adapter claim 1 , wherein the first gap is between 0.001 inches to 0.015 inches.4. The method of claim 1 , further comprising forming a second cavity between the header and the adapter.5. The method of claim 4 , wherein forming the second cavity at least partially isolates the header from a stress applied at the adaptor.6. The method of claim 4 , wherein forming the second cavity between the header and the adapter defines a second gap between the header and the adapter claim 4 , wherein the second gap is between 0.005 inches to 0.040 inches.7. The method of claim 1 , further comprising forming a front seal between the sensing element and a mating surface.8. The method of claim 1 , further comprising measuring an environmental condition with the sensing element.9. The method of claim 8 , wherein ...

DIFFERENTIAL PRESSURE SENSOR CHIP, DIFFERENTIAL PRESSURE TRANSMITTER, AND METHOD FOR MANUFACTURING DIFFERENTIAL PRESSURE SENSOR CHIP

A differential pressure sensor chip () includes: first and second pressure introduction holes (_ and _); first and second diaphragms (_ and _) formed to cover the first and second pressure introduction holes; first and second depressions (_ and _) each in a form of a depression respectively provided to face the first and second pressure introduction holes with the first and second diaphragms interposed therebetween; a first communication channel () that makes a chamber between the first depression and the first diaphragm and a chamber between the second depression and the second diaphragm communicate to each other; a pressure-transmission-material introduction passage () an end of which is an opening and another end of which is joined to the first communication channel; a pressure transmission material () that fills the first communication channel, the two chambers, and the pressure-transmission-material introduction passage; and a sealing member () formed of a metal formed to seal a depression on a metal layer () formed on a surface of the opening of the pressure-transmission-material introduction passage. 1. A differential pressure sensor chip comprising:a first base portion including a first main surface, a second main surface opposite to the first main surface, and a first pressure introduction hole and a second pressure introduction hole that are each open on the first main surface and the second main surface;a semiconductor film formed on the second main surface of the first base portion; anda second base portion including a third main surface and a fourth main surface opposite to the third main surface, the third main surface being bonded to the semiconductor film, a first diaphragm configured to cover an end of the first pressure introduction hole,', 'a second diaphragm configured to cover an end of the second pressure introduction hole,', 'a first strain gauge provided for the first diaphragm and configured to detect a pressure of a fluid that is a ...

Sensor Element for Measuring Pressure and Temperature

A sensor element and a method for making a sensor element are disclosed. In an embodiment, a sensor element includes a main part with a membrane and an edge zone arranged around the membrane and an electrically conductive layer having a first region arranged over the membrane of the main part and a second region arranged over the edge zone of the main part, wherein the membrane is a pressure-sensitive zone of the main part such that the membrane is configured to undergo deformation as a function of a pressure differential between an upper side and an underside of the membrane, wherein the edge zone is a pressure-insensitive zone, and wherein the electrically conductive layer is structured in the second region such that at least one temperature-dependent resistance is formed in the second region of the electrically conductive layer. 115-. (canceled)16. A sensor element comprising:a main part with a membrane and an edge zone arranged around the membrane; andan electrically conductive layer having a first region arranged over the membrane of the main part and a second region arranged over the edge zone of the main part,wherein the membrane is a pressure-sensitive zone of the main part such that the membrane is configured to undergo deformation as a function of a pressure differential between an upper side and an underside of the membrane,wherein the edge zone is a pressure-insensitive zone of the main part,wherein the electrically conductive layer is structured in the second region such that at least one temperature-dependent resistance is formed in the second region of the electrically conductive layer, andwherein the sensor element is configured to measure pressure and temperature.17. The sensor element according to claim 16 , wherein the electrically conductive layer claim 16 , in the first region and in the second region claim 16 , is constituted of the same material.18. The sensor element according to claim 16 , wherein the electrically conductive layer is ...

WIDE-RANGE PRECISION CONSTANT VOLUME GAS THERMOMETER

A Constant Volume Gas Thermometer (CVTG) device for measuring the temperature with high precision over a wide temperature range comprises a pressure measurement device, which comprises a mechanical assembly forming a membrane. The capillary tube communicates with the bottom side of the membrane and a first pressure measurement element on the membrane generates a signal in dependence of a deformation of the membrane. Further, the CVTG comprises electronic means for reading and correlating the signal of said first pressure measurement element to the temperature of the gas cartridge. The gas volume inside the pressure measurement device is minimized by careful design and tight tolerances. To measure pressures below 0.1 MPa inside the CVGT with sufficient accuracy, the CVGT include a second pressure measurement device which is based on the Pirani measurement principle. A Pirani measurement device measures the thermal conductivity of the surrounding gas. To this end, a thermally insulated wire or surface is heated electrically to a defined temperature, while the surrounding gas is at ambient temperature. If the thermal conductivity of the surrounding gas changes, either the Pirani element's temperature changes, or the electrical heating power needs to be adapted in order to maintain the Pirani element's temperature. 1. A Constant Volume Gas Thermometer (CVGT)comprising a gas cartridge , a pressure measurement device , and a capillary tube , which connects the gas cartridge to the pressure measurement device , wherein the pressure measurement device comprises a mechanical assembly forming a membrane wherein the capillary tube communicates with the bottom side of the membrane , a pressure measurement element on the membrane generating a signal in dependence of a deformation of the membrane , and electronic means for correlating the signal of said pressure measurement element to the temperature of the gas cartridge.2. The thermometer according to claim 1 , wherein the ...

PIEZOELECTRIC PRESSURE SENSOR

A piezoelectric pressure sensor includes a sensor housing enclosing a membrane, a piezoelectric sensor, an electrode arrangement and a pre-stressing body. The membrane captures a pressure profile causing polarization charges generated on the piezoelectric sensor. The electrode arrangement receives the polarization charges generated and includes a charge-pick-off and a charge output. The charge pick-off is electrically and mechanically connected to the charge output, which is electrically is mechanically connected to the pre-stressing body via an electrical feedthrough arrangement on a side of the pre-stressing body that faces away from the membrane and seals the third gap in a pressure-tight manner from an environment of the third gap. 1. A piezoelectric pressure sensor comprising:a sensor housing assembly;a membrane configured and disposed in the sensor housing assembly for capturing a pressure profile;a piezoelectric sensor disposed in the sensor housing assembly and configured for generating polarization charges from the pressure profile captured by the membrane;an electrode arrangement disposed in the sensor housing assembly to receive the generated polarization charges and including a charge output and a charge-pick-off electrically and mechanically connected to the charge output;a pre-stressing body disposed in the sensor housing assembly and electrically insulated from the charge output by a third gap; andan electrical feedthrough arrangement disposed in the sensor housing assembly and that seals the third gap from an environment in a pressure-tight manner and mechanically connects the charge output to the pre-stressing body on a side of the pre-stressing body that faces away from the membrane.2. The piezoelectric pressure sensor according to claim 1 , wherein the charge pick-off is connected to the charge output by material bonding or integrally.3. The piezoelectric pressure sensor according to claim 1 , further comprising:a first electric insulation body ...

Sensor package

A sensor package includes a pressure sensor, a computation unit that performs specified computation in accordance with a result of detection performed by the pressure sensor, a lead frame through which a result of computation performed by the computation unit is output to an outside, a main housing that is formed of resin and that holds the lead frame, and a sensor housing that is formed of ceramic and that has an inner space in which the pressure sensor is disposed. The pressure sensor is disposed in the main housing using the sensor housing.

PRESSURE SENSOR

A pressure sensor includes a sensor assembly and an evaluation unit. The; sensor assembly includes a sensor and an electrode arrangement. The sensor is configured to generate signals under the action of a pressure profile. The electrode arrangement is configured to transmit the signals to the evaluation unit. The evaluation unit includes an electric circuit board. The electric circuit board includes a base material that is electrically insulating with a specific volume resistance that is at least equal to 10Ωcm at room temperature. The electric circuit board includes a high temperature region facing the sensor assembly and a normal temperature region that faces away from the sensor assembly. 1. A pressure sensor comprising:a sensor assembly including a sensor that generates signals under the action of a pressure profile, the sensor assembly including an electrode arrangement configured to transmit the signals from the sensor to an evaluation unit; and{'sup': '15', 'an evaluation unit including an electric circuit board that includes a base material that is electrically insulating with a specific volume resistance of at least 10Ωcm at room temperature; and'}wherein the electric circuit board includes a high temperature region facing the sensor assembly and a normal temperature region that faces away from the sensor assembly.2. The pressure sensor according to claim 1 , wherein the sensor is a piezoelectric sensor that produces piezoelectric charges under the action of a pressure profile; and the electrode arrangement receives the piezoelectric charges from the piezoelectric sensor and transmits the received piezo-electric charges as signals to the evaluation unit.3. The pressure sensor according to claim 1 , wherein the high temperature region extends over 80% of the length of the electric circuit board along a longitudinal axis claim 1 , preferably over 50% of the length of the electric circuit board along a longitudinal axis claim 1 , preferably over 30% of the ...

Pressure sensor having cap-defined membrane

Structures and methods of protecting membranes on pressure sensors. One example may provide a pressure sensor having a backside cavity defining a frame and under a membrane formed in a device layer. The pressure sensor may further include a cap joined to the device layer by a bonding layer. A recess for a reference cavity may be formed in one or more of the cap, bonding layer, and membrane or other device layer portion. The recess may have a width that is narrower than a width of the backside cavity in at least one direction. In other examples, the recess may be shaped such that it has an outer edge that is within an outer edge of the backside cavity. This may reinforce a junction of the device layer and frame. The recess may define an active membrane spaced away from the device layer and backside cavity junction.

Pressure sensor

According to an example aspect of the present invention, there is provided a MEMS pressure sensor, comprising: a sensor portion comprising a deformable membrane and a first volume, and a valve portion comprising a first output to a first side of the pressure sensor and a second output to a second side of the pressure sensor. The valve portion is operable to close the second output and open the first output to equalize pressure in the first volume with pressure at the first side of the pressure sensor for calibrating the sensor; and close the first output and open the second output to equalize pressure in the first volume with pressure at the second side of the pressure sensor for pressure measurement.

Device And A Method For Measuring A Fluid Pressure And For Verifying The Fluid Pressure That Has Been Measured

A device for measuring a fluid pressure and for verifying the fluid pressure that has been measured comprises a sensor element having a fluid chamber and an element that adjoins said fluid chamber and can be deformed under fluid pressure, a resistance bridge being arranged on the deformable element side that faces away from said fluid chamber, for the purpose of generating a transverse bridge voltage dependent on said fluid pressure. The device also comprises a voltage divider which is connected in parallel to said resistance bridge for generating a differential voltage. 115.-. (canceled)16. A hydraulic control unit comprising a device for measuring a fluid pressure and for verifying the fluid pressure that has been measured , wherein the device comprises:a sensor element which has a fluid chamber and an element which adjoins the fluid chamber and can be deformed under fluid pressure, wherein a resistance measurement bridge is arranged on that side of the deformable element which is averted from the fluid chamber, for generating a transverse bridge voltage which is dependent on the fluid pressure,a voltage divider which is connected in parallel to the resistance measurement bridge, for generating a differential voltage between the voltage divider which is connected in parallel to the resistance measurement bridge and the resistance measurement bridge, andan electronic signal processing component which is designed to alternately select the transverse bridge voltage and the differential voltage for the purpose of further processing by the electronic signal processing component, wherein the differential voltage that has been processed is used for verifying the transverse bridge voltage that has been measured and processed.17. The control unit of claim 16 , wherein the voltage divider has two resistance elements which are connected in series.18. The control unit of claim 16 , wherein the resistance measurement bridge has two voltage dividers which are connected in ...

Method for producing a pressure sensor and corresponding sensor

The invention relates to a method for producing a pressure sensor, comprising the following steps: assembling a support substrate with a deformable membrane on which strain gauges have been deposited, wherein the deformable membrane comprises a thinned area at the centre thereof, the support substrate is disposed on top of the deformable membrane, the support substrate comprises an upper surface and a lower surface in contact with the deformable membrane, and the support substrate also comprises lateral recesses arranged on top of the strain gauges and a central recess arranged on top of the thinned area of the membrane, so as to obtain a micromechanical structure; and, once the assembly has been obtained, depositing, in a single step, at least one conductive material on the upper surface of the support and in the lateral recesses of the support, said conductive material extending into the recesses in order to be in contact with the strain gauges so as to form electrical contacts in contact with the strain gauges.

PROVISION OF DISTRIBUTED PAGING OCCASIONS

According to some embodiments, methods are provided to operate a base station of a wireless communication network. For example, parameters may be generated that define a plurality of potential PDCCH monitoring occasions and that define a plurality of paging occasions, wherein each one of the plurality of paging occasions includes a respective subset of the plurality of potential PDCCH monitoring occasions, wherein consecutive paging occasions are spaced apart in time with at least one of the potential PDCCH monitoring occasions therebetween not being included in any of the plurality of paging occasions. The parameters are transmitted over a radio interface to a wireless device. Related methods of operating wireless devices, related base stations, and related wireless devices are also discussed. 1. A method of operating a base station of a wireless communication network , the method comprising:generating a set of parameters that define a plurality of potential, Physical Downlink Control Channel, PDCCH, monitoring occasions and that define a plurality of paging occasions being associated with a paging frame, wherein the set of parameters comprise a parameter indicative of a number of consecutive potential PDCCH monitoring occasions of each one of the plurality of paging occasions;wherein the set of parameters further include other parameters defining respective offsets for the respective paging occasions with respect to a beginning of the paging frame; andtransmitting the set of parameters over a radio interface to a wireless device.2. The method of claim 1 , wherein the set of parameters are generated for consecutive paging occasions that are spaced apart in time with at least one of the potential PDCCH monitoring occasions therebetween not being included in any of the plurality of paging occasions.3. The method of claim 1 , wherein the set of parameters include a first parameter defining the plurality of potential PDCCH monitoring occasions claim 1 , the first ...

SYSTEMS AND METHODS FOR SWITCHED MULTI-TRANSDUCER PRESSURE SENSORS AND COMPENSATION THEREOF

Systems and methods are disclosed for a switched, multiple range sensor system including multiple transducers. In one embodiment, a method is provided that includes receiving and measuring at a first transducer and a second transducer, a pressure to generate a respective first and second pressure signal; amplifying the first and second pressure signals with corresponding first and second fixed-gain amplifier to generate first and second amplified pressure signals; selecting for monitoring, the first or second amplified pressure signal; converting the selected amplified pressure signal to an intermediate digital pressure signal; measuring, at a thermal sensor associated with the selected amplified pressure signal, a temperature; compensating, based on the measured temperature, the intermediate digital pressure signal to generate a compensated digital pressure output signal; and outputting the compensated digital pressure output signal. 1. A method , comprising:receiving, at a first transducer and a second transducer, a pressure, wherein the first transducer is associated with a first pressure range and the second transducer is associated with a second pressure range;measuring, at one or more of the first transducer and the second transducer, the pressure to generate one or more of a first pressure signal and a second pressure signal;amplifying the one or more of the first pressure signal and the second pressure signal with a programmable-gain amplifier;selecting for monitoring, the first or second amplified pressure signal;converting the selected amplified pressure signal to an intermediate digital pressure signal;measuring, at a thermal sensor associated with the selected amplified pressure signal, a temperature;compensating, based on the measured temperature, the intermediate digital pressure signal to generate a compensated digital pressure output signal; andoutputting the compensated digital pressure output signal.2. The method of claim 1 , further comprising: ...

PRESSURE TRANSDUCER, SYSTEM AND METHOD

A diaphragm pressure transducer includes a body having an outer surface and a diaphragm, a strain gauge including a resistive element located on the outer surface, a fluidic inlet, and a fluidic cavity enclosed by the body in fluidic communication with the fluidic inlet, the fluidic cavity having an upper surface. The diaphragm is located between the upper surface of the fluidic cavity and the outer surface of the body. The diaphragm includes a variable thickness across a region defined between the upper surface of the fluidic cavity and the outer surface located below the strain gauge. 1. A diaphragm pressure transducer comprising:a body having an outer surface and a diaphragm;a strain gauge including a resistive element located on the outer surface;a fluidic inlet; anda fluidic cavity enclosed by the body in fluidic communication with the fluidic inlet, the fluidic cavity having an upper surface,wherein the diaphragm is located between the upper surface of the fluidic cavity and the outer surface of the body, and wherein the diaphragm includes a variable thickness across a region defined between the upper surface of the fluidic cavity and the outer surface located below the strain gauge.2. The diaphragm pressure transducer of claim 1 , wherein the fluidic cavity includes a circular cross section and wherein the region of the diaphragm is a circular region having a region radius claim 1 , and wherein the region of the diaphragm includes a circumferential channel in the upper surface of the fluidic cavity having an outer channel radius and an inner channel radius claim 1 , the circumferential channel reducing a thickness of the diaphragm relative to a portion of the circular region not characterized by the circumferential channel.3. The diaphragm pressure transducer of claim 2 , wherein the outer channel radius of the circumferential channel is less than the region radius of the circular region.4. The diaphragm pressure transducer of claim 3 , wherein the circular ...

MICROMACHINED ULTRA-MINIATURE PIEZORESISTIVE PRESSURE SENSOR AND METHOD OF FABRICATION OF THE SAME

A method of fabrication of one or more ultra-miniature piezoresistive pressure sensors on silicon wafers is provided. The diaphragm of the piezoresistive pressure sensors is formed by fusion bonding. The piezoresistive pressure sensors can be formed by silicon deposition, photolithography and etching processes. 1. A device , comprising:a first silicon-on-insulator structure comprising a first silicon layer deposited on a first oxide layer over a first bulk silicon layer;a second silicon-on-insulator structure comprising a second silicon layer deposited on a second oxide layer over a second bulk silicon layer, wherein the first silicon layer and the second silicon layer are bonded together with the first silicon layer and the second silicon layer facing each other after the second bulk silicon layer and the second oxide layer are removed to leave the second silicon layer of the second silicon-on-insulator structure overlying the first silicon layer;one or more openings of predetermined shape and dimension formed to expose a portion of the second silicon layer;one or more piezoresistors formed on the one or more openings of the second silicon layer;a patterned trench formed within the second silicon layer and the first silicon layer, stopping at the first oxide layer;a piezoresistor pressure sensor formed within the patterned trench after the first bulk silicon layer is removed.2. The device of claim 1 , wherein the first silicon layer has a thickness of between about 5 μm and about 100 μm.3. The device of claim 1 , wherein the second silicon layer has a thickness of between about 0.5 μm and about 5 μm.4. The device of claim 1 , wherein the first silicon-on-insulator structure is provided with a patterned cavity already formed within the first silicon layer.5. The device of claim 1 , further comprising:a patterned cavity formed on the surface of the first silicon layer of the silicon-on-insulator structure.6. The device of claim 1 , wherein the patterned trench within ...

Absolute Pressure Sensor With Improved Bonding Boundary

A pressure sensor includes a top cap with a recess formed in an end of the top cap and a cavity formed in the end of the top cap to communicate with the recess. The cavity extends further axially into the top cap than the recess thereby having depth greater than a depth of the recess. Outer edges of the recess extend laterally outward beyond outer edges of the cavity thereby defining a bonding boundary. A silicon substrate has a sensing circuit on a top side thereof. The top cap is bonded to the top side of the silicon substrate in a range from the outer edges of the top cap to the bonding boundary. The recess and the cavity of the top cap face the top side of the silicon substrate and form a reference vacuum cavity. When pressure is exerted on a backside of the substrate, a portion of the substrate is constructed and arranged to deflect. 1. A pressure sensor comprising:a top cap;a recess formed in an end of the top cap;a cavity formed in the end of the top cap and communicating with the recess such that the cavity extends further axially into the top cap than the recess thereby having depth greater than a depth of the recess, outer edges of the recess extend laterally outward beyond outer edges of the cavity thereby defining a bonding boundary; anda silicon substrate having a sensing circuit associated with a top side thereof, the top cap being bonded to the top side of the silicon substrate in a range from the outer edges of the top cap to the bonding boundary;wherein the recess and the cavity of the top cap face the top side of the silicon substrate and form a reference vacuum cavity and wherein, when pressure is exerted on a backside of the substrate, a portion of the silicon substrate is constructed and arranged to deflect.2. The sensor of claim 1 , wherein the recess is generally rectangular having rounded corners.3. The sensor of claim 1 , wherein the depth of the recess is less than about 10 μm and the depth of the cavity is greater than about 100 μm.4. The ...

Sensor co-located with an electronic circuit

This disclosure provides example methods, devices, and systems for a sensor co-located with an electronic circuit. In one embodiment, a sensor assembly may comprise a semiconductor device configured to include a sensor having a sensing element, an electronic circuit and wherein the sensing element and the electronic circuit are hermetically sealed in the same sensor assembly; and wherein the sensor assembly is capable of outputting an environmental condition signal associated with an environmental condition measured by the sensor.

Pressure Measuring Device

Provided is a pressure measuring device that can stably bond a strain detection element even to a diaphragm made of metal having a large coefficient of thermal expansion. In order to achieve the above object, the pressure measuring device of the present invention includes: a metal housing including a pressure introduction unit and a diaphragm deformed by a pressure introduced via the pressure introduction unit; and a strain detection element for detecting strain generated in the diaphragm, wherein a base made of a first brittle material is provided on the metal housing, and the strain detection element is bonded to the base via a second brittle material having a melting point lower than a melting point of the base. 1. A pressure detection device , comprising:a metal housing including a pressure introduction unit and a diaphragm deformed by a pressure introduced via the pressure introduction unit; anda strain detection element for detecting strain generated in the diaphragm, whereina base made of a first brittle material is provided on the metal housing, andthe strain detection element is bonded to the base via a second brittle material having a melting point lower than a melting point of the base.2. The pressure measuring device according to claim 1 , wherein a main component of the second brittle material is glass containing vanadium.311. The pressure measuring device according to caim claim 1 , wherein the melting point of the second brittle material is equal to or lower than 400° C.4. The pressure measuring device according to claim 3 , wherein a melting point of the first brittle material is equal to or higher than 800° C.5. The pressure measuring device according to claim 1 , whereinthe strain detection element is subjected to anodic bonding with a glass substrate, andthe glass substrate is bonded to the base via the second brittle material.6. The pressure measuring device according to claim 1 , wherein the base is formed by stacking a plurality of brittle ...

Hermetic pressure sensor

A hermetic pressure sensor for measuring a fluid pressure includes a hermetic housing, formed of a first housing structure with a membrane section, a second housing structure hermetically connected to the first structure, and one or more strain sensing elements attached to the membrane section. The second housing structure includes openings for one or more electrical pins while a non-conductive hermetic seal holds the electrical pins in place. The pressure sensor measures the pressure of fluid entering the housing while also providing a hermetic seal.

Absolute Pressure Sensor

An absolute pressure sensor assembly configured to generate a pressure output representing pressure of a target media modified to take into account pressure loss of a sensor cavity of the absolute pressure sensor. 1. An absolute pressure sensor assembly comprising:a first diaphragm between a sensor cavity sealed under vacuum and a pressure media to be measured;a first strain gauge of the first diaphragm configured to measure pressure of the pressure media relative to pressure of the sensor cavity;a second diaphragm between an error cavity sealed under vacuum and an error counter-cavity sealed under vacuum; anda second strain gauge of the second diaphragm configured to measure pressure of the error counter-cavity relative to the error cavity to identify a pressure error of the absolute pressure sensor assembly;wherein the absolute pressure sensor assembly is configured to generate a pressure output that includes the pressure of the pressure media as measured by the first strain gauge modified by the pressure error measured by the second strain gauge.2. The absolute pressure sensor of claim 1 , wherein the first diaphragm and the second diaphragm are on a single substrate.3. The absolute pressure sensor of claim 1 , wherein the first strain gauge and the second strain gauge include electrodes.4. The absolute pressure sensor of claim 1 , further comprising a sensor counter-cavity opposite to the sensor cavity;wherein the sensor counter-cavity is configured to receive the pressure media to be measured.5. The absolute pressure sensor of claim 1 , wherein the pressure media to be measured includes at least one of air claim 1 , oil claim 1 , and hydraulic fluid.6. The absolute pressure sensor of claim 1 , wherein the absolute pressure sensor assembly is calibrated with the sensor cavity and the error cavity at the same pressure.7. The absolute pressure sensor of claim 1 , wherein the sensor cavity and the error cavity are configured such that pressure loss of the sensor ...

Piezoresistive Pressure Sensor Provided With A Calibration Resistor Of The Offset

The piezoresistive pressure sensor () comprises a rigid flat support (), a flat flexible membrane () having a flat external face () exposed to a pressure of a fluid and a flat internal face () delimiting in cooperation with a flat internal face () of the support () a chamber () accommodating the deformation of the membrane (), an electrical measuring circuit comprising a resistive Wheatstone bridge () applied on the flat internal face () of the membrane () for detecting the deformation of the membrane (), and at least an electrical resistor (Rc) for calibrating the value of the output signal when the fluid is at a reference pressure, the calibration resistor (Rc) being applied on the flat internal face () of the membrane (). 11234572931053353. A piezoresistive pressure sensor () comprising a rigid flat support () , a flat flexible membrane () having a flat external face () exposed to a pressure of a fluid and a flat internal face () delimiting in cooperation with a flat internal face () of said support () a chamber () accommodating a deformation of said membrane () , an electrical measuring circuit comprising a resistive Wheatstone bridge () applied on the flat internal plane () of said membrane () for detecting the deformation of said membrane () , and at least an electrical resistor (Rc) for compensating a value of said output signal when said fluid is at a reference pressure , wherein the calibration resistor (Rc) is applied on said flat internal face () of said membrane ().2121112131410151617181061516. The piezoresistive pressure sensor () according to claim 1 , wherein the support () has a first pair of through-holes ( claim 1 , ) passing through a wall thickness thereof claim 1 , clad in electrically conductive material ( claim 1 , ) and electrically connected to two supply terminals (V claim 1 , V) of said resistive bridge () claim 1 , a second pair of through-holes ( claim 1 , ) coated with electrically-conductive material ( claim 1 , ) and electrically ...

HIGH TEMPERATURE PROTECTED WIRE BONDED SENSORS

Systems and methods are disclosed for packaging sensors for use in high temperature environments. In one example implementation, a sensor device includes a header; one or more feedthrough pins extending through the header; and a sensor chip disposed on a support portion of the header. The sensor chip includes one or more contact pads. The sensor device further includes one or more wire bonded interconnections in electrical communication with the respective one or more contact pads and the respective one or more feedthrough pins. The sensor device includes a first sealed enclosure formed by at least a portion of the header. The first sealed enclosure is configured for enclosing and protecting at last the one or more wire bonded interconnections and the one or more contact pads from an external environment. 1. A sensor device , comprising:a header;one or more feedthrough pins extending through the header;a sensor chip disposed on a support portion of the header, the sensor chip comprising one or more contact pads;one or more wire bonded interconnections in electrical communication with the respective one or more contact pads, the one or more wire bonded interconnections are in electrical communication with the respective one or more feedthrough pins, the one or more wire bonded interconnections are further in direct mechanical communication between the one or more contact pads and the respective one or more feedthrough pins; anda first sealed enclosure formed by at least a portion of the header, the first sealed enclosure isolating at least the one or more wire bonded interconnections and the one or more contact pads from an external environment.2. The sensor device of claim 1 , wherein the first sealed enclosure is further formed by at least a first portion of the sensor chip claim 1 , wherein the sensor chip is sealed to at least a portion of the header claim 1 , the first sealed enclosure further isolating at least the first portion of the sensor device from an ...

PIEZORESISTIVE SENSOR WITH SPRING FLEXURES FOR STRESS ISOLATION

A MEMS device includes a backing wafer with a support portion and central back plate connected to the support portion with spring flexures, a diaphragm wafer with a support portions and a sensing portion connected to the support portion with spring flexures, a passivation layer on the diaphragm, and a topping wafer. The device allows for stress isolation of a diaphragm in a piezoresistive device without a large MEMS die. 1. A method of making a sensor device comprises:processing a topping wafer; a backing support portion, and', 'a central backing plate connected to the backing support portion by one or more backing springs;, 'making a backing wafer comprising a diaphragm support portion, and', depositing a first passivation layer onto a silicon wafer,', 'adding a piezoresistive layer on the first passivation layer,', 'depositing a metal film on the first passivation layer,', 'depositing a top passivation layer on the metal film,', 'etching a diaphragm into the silicon wafer opposite the piezoresistive layer,', 'etching spring reliefs into the silicon wafer surrounding the diaphragm, and', 'etching fine features of the diaphragm springs;, 'a sensing portion connected to the diaphragm support portion by one or more diaphragm springs, wherein creating the diaphragm wafer comprises], 'creating a diaphragm wafer comprisingprocessing a base wafer; andassembling a wafer stack with the topping wafer, the backing wafer, the diaphragm wafer, and the base wafer, such that the backing wafer and the diaphragm wafer are connected with frit, and the diaphragm wafer and the topping wafer are connected with frit.213. The method of claim , wherein assembling a wafer stack comprises:bonding the wafers together;metalizing the base wafer;soldering the base wafer to a package;wire bonding electrical feedthrough pins to the diaphragm wafer; andattaching a cap header.314. The method of claim , wherein bonding the wafers together comprises:bonding the backing wafer to the base wafer;bonding ...

Pressure sensor device

A pressure sensor device of the present invention includes a first board including external connection terminals, a second board stacked on an upper surface of the first board and including a first through hole and a second through hole, a pressure sensor element including a diaphragm structure and mounted on an upper surface of the second board such that the first through hole is closed by the diaphragm structure, and a cover that is mounted on the upper surface of the second board to cover the pressure sensor element and in which a first channel for guiding a first fluid to an upper surface of the diaphragm structure is formed. A second channel is formed between the first board and the second board to lead from the second through hole to the first through hole and guide a second fluid to a lower surface of the diaphragm structure.

PRESSURE TRANSDUCER, SYSTEM AND METHOD

Disclosed is a pressure transducer including a body made of a material having a first coefficient of thermal expansion, a fluidic inlet and a fluidic cavity enclosed by the body in fluidic communication with the fluidic inlet. The pressure transducer further includes a strain gauge including a resistive element in operable contact with the body. At least a portion of the resistive element made of a material having a second coefficient of thermal expansion that is different from the first coefficient of thermal expansion of the body. Disclosed further is a pressure transducer including a filler body located in a fluidic cavity of the pressure transducer configured to reduce adiabatic thermal effects on a transducer body. Disclosed are systems and methods incorporating the pressure transducers described herein.

PRESSURE SENSOR, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING PRESSURE SENSOR

In the pressure sensor of the present application, at least two resistors are simultaneously formed on the foldable portion and the fixed portion to ensure the uniformity and consistency of the resistance values of all the resistors, and at least one is a strain sensing resistor R the foldable portion is folded to the fixed portion, and the resistors are electrically connected to form a pressure measuring circuit. Connecting the pressure sensor to the desired panel can accurately detect the curved deformation of the panel. The resistors in a pressure measuring circuit are adjacently distributed, and the resistance value of the resistor changes with temperature at the same time, so that the influence of the temperature change on the pressure measuring circuit is very small, and the interference against the external environment is good. 1. A pressure sensor , comprising:a substrate, the substrate comprises at least one sensing area, wherein the sensing area is provided with a hollow groove, and a foldable portion is formed inside of the hollow groove, and the sensing area further comprises: a fixed portion attached to the foldable portion along a broken line, the foldable portion having a first mounting surface and a first bonding surface disposed opposite to each other, the fixed portion having a second mounting surface and a second bonding surface disposed opposite to each other, the first mounting surface being on the same side as the second mounting surface, and the first bonding surface being on the same side as the second bonding surface; andat least one pressure measuring circuit, the number of the at least one pressure measuring circuits is equal to the number of the at least one sensing areas, each of the at least one pressure measuring circuits is disposed correspondingly on one of the at least one sensing area, each of the at least one pressure measuring circuits having at least two resistors simultaneously molded on the corresponding sensing area, wherein ...

DEVICE FOR MEASURING AND SYSTEM FOR MEASURING A PRESSURE COMPRISING A PRESSURE SENSOR

The invention provides a pressure measurement device comprising a pressure sensor () comprising a printed circuit card () having a portion that is to be subjected to the pressure for measurement, the printed circuit card having strain detectors () mounted on said portion to measure deformation of the printed circuit card under the influence of said pressure. 1. A device for measuring the pressure of a vehicle tire , the device comprising:a sensor comprising a printed circuit card having a portion that is to be subjected to the pressure for measurement, the printed circuit card having strain detectors mounted on said portion to measure deformation of the printed circuit card under the influence of said pressure, the sensor being designed to be secured to the tire of pressure that it is desired to measure; and 'the printed circuit card having a first main face and a second main face, the components of the sensor that serve as coupling components between the sensor and the stationary portion of the sensor being arranged on the second main face of said printed circuit card outside the portion that is to be subjected to the pressure for measurement.', 'a stationary portion subjected to be secured to the vehicle facing a path of the sensor to receive measurements acquired by the sensor;'}2. The device according to claim 1 , wherein the printed circuit card includes a central orifice extending from the second main face towards the first main face but without opening out into said first main face claim 1 , the portion that is to be subjected to the pressure for measurement thus being formed by the central zone of minimum thickness defined on top by the bottom of the orifice and at the bottom by the first main face.3. The device according to claim 1 , wherein the printed circuit card includes an orifice extending inside said printed circuit card without opening out in said first main face or said second main face claim 1 , the portion that is to be subjected to the pressure ...

STRUCTURE FOR ATTACHING PRESSURE DETECTOR

An attachment structure for a pressure detector that is such that the pressure detector is attached in an airtight manner within an insertion hole of an attachment tool main body attached to a mechanical device or pipelines, with a pipe, a gasket presser, a gasket, a split ring, and a bonnet. The configuration is such that the gasket presser and the split ring are inserted into the insertion hole of the attachment tool main body, the bonnet is inserted into the insertion hole, the bonnet is fastened to the attachment tool main body side, the gasket presser and the gasket are pressed by the split ring, and sealing portions are formed between the bottom surface of the insertion hole and one end surface of the gasket and between the tip end surface of the gasket restraint and the other end surface of the gasket. 1. A structure for attaching a pressure detector air-tightly into an insertion hole of an attachment tool main body attached to pipelines or mechanical devices comprising: a casing forming a pressure introduction hole,', 'a pressure receiving chamber being provided in the casing and communicating with the pressure introduction hole,', 'a diaphragm displacing depending on the pressure of the pressure receiving chamber, and', 'a pressure detecting element converting a pressure caused by the displacement of the diaphragm into an electrical signal; and, 'a pressure detector having a pipe protruding outwardly on the casing and forming the pressure introduction hole;', 'an annular gasket presser with a diameter larger than the pipe provided at the front end of the pipe;', 'an annular gasket provided on the bottom face of the insertion hole of the attachment tool main body and abutting against the front end surface of the gasket presser;', 'a split ring abutting against the face opposite to the front end face of the gasket presser; and', 'a bonnet pressing the split ring removably inserted into the insertion hole of the attachment tool main body, wherein:, 'the ...

INTEGRATED PRESSURE SENSOR WITH DOUBLE MEASURING SCALE, PRESSURE MEASURING DEVICE INCLUDING THE INTEGRATED PRESSURE SENSOR, BRAKING SYSTEM, AND METHOD OF MEASURING A PRESSURE USING THE INTEGRATED PRESSURE SENSOR

A pressure sensor with double measuring scale includes: a flexible body designed to undergo deflection as a function of a the pressure; piezoresistive transducers for detecting the deflection; a first focusing region designed to concentrate, during a first operating condition, a first value of the pressure in a first portion of the flexible body so as to generate a deflection of the first portion of the flexible body; and a second focusing region designed to concentrate, during a second operating condition, a second value of said pressure in a second portion of the flexible body so as to generate a deflection of the second portion of the flexible body. The piezoresistive transducers correlate the deflection of the first portion of the flexible body to the first pressure value and the deflection of the second portion of the flexible body to the second pressure value. 1. A pressure sensor with double measuring scale , comprising:a flexible body configured to undergo, at least in part, deflection as a function of a pressure acting in a direction;a substrate arranged facing a first side of the flexible body;a transduction assembly configured to generate a first output signal and a second output signal as a function of deflections of respective first and second portions of the flexible body;a first focusing region arranged between the substrate and the flexible body and configured to concentrate, during a first operating condition, a first pressure value of said pressure in the first portion of the flexible body and generate a deflection of the first portion of the flexible body; anda second focusing region fixed to the flexible body and configured to contact the first substrate, during a second operating condition, concentrate a second pressure value of said pressure in the second portion of the flexible body, and generate a deflection of the second portion of the flexible body.2. The pressure sensor according to claim 1 , further comprising a cavity between the ...

Pressure sensor, altimeter, electronic apparatus, and moving object

A pressure sensor includes a pressure sensor device including a diaphragm that undergoes bending deformation under pressure and a sensor section disposed on the diaphragm and a pressure sensor device including a diaphragm that undergoes bending deformation under pressure and a sensor section disposed on the diaphragm, and one of the sensor sections has a positive temperature characteristic, and the other has a negative temperature characteristic.

Dynamic Pressure Sensor

According to various embodiments, a dynamic pressure sensor includes a substrate, a reference volume formed in the substrate, a deflectable membrane sealing the reference volume, a deflection sensing element coupled to the membrane and configured to measure a deflection of the membrane, and a ventilation hole configured to equalize an absolute pressure inside the reference volume with an absolute ambient pressure outside the reference volume. 1. A pressure sensor , comprising:a substrate comprising a cavity;a deflectable membrane sealing the cavity to form a reference volume in the substrate;a ventilation hole extending through the deflectable membrane and connecting an external volume to the reference volume; anda deflection sensing element forming within the deflectable membrane, the deflection sensing element configured to generate a signal in response to a deflection of the deflectable membrane.2. The pressure sensor of claim 1 , wherein the deflection sensing element comprises a piezo-sensor.3. The pressure sensor of claim 2 , wherein the piezo-sensor comprises at least one of a piezoelectric material or a piezoresistive material.4. The pressure sensor of claim 1 , comprising a bandpass frequency response comprising an infrasonic low frequency cutoff and a high frequency cutoff.5. The pressure sensor of claim 4 , wherein the infrasonic low frequency cutoff is about 0.1 Hz.6. The pressure sensor of claim 4 , wherein the high frequency cutoff is about 1 kHz.7. The pressure sensor of claim 4 , wherein the high frequency cutoff is about 10 Hz.8. The pressure sensor of claim 1 , further comprising a readout circuit coupled to the deflection sensing element claim 1 , the readout circuit configured to read out the signal generated by the deflection sensing element in response to the deflection of the deflectable membrane.9. A pressure sensing system claim 1 , comprising:an absolute pressure sensor configured to determine a static external pressure; and a deflectable ...

Flat Covered Leadless Pressure Sensor Assemblies Suitable for Operation in Extreme Environments

This disclosure provides example methods, devices and systems associated with flat covered leadless pressure sensor assemblies suitable for operation in extreme environments. In one embodiment, a system may comprise a semiconductor substrate having a first side and a second side; a diaphragm disposed on the first side of the semiconductor substrate; a first cover coupled to the first side of the semiconductor substrate such that it overlays at least the diaphragm, wherein a pressure applied at the first cover is transferred to the diaphragm; and a sensing element disposed on the second side of the semiconductor substrate, wherein the sensing element is used to measure the pressure. 1. A system , comprising:a semiconductor substrate having a first side and a second side;a diaphragm disposed on the first side of the semiconductor substrate, the diaphragm comprising a first boss region; a bottom surface having a second boss region, wherein at least a portion of the bottom surface is in communication with the diaphragm; and', 'a uniformly flat outermost surface; and, 'a first cover overlaying at least the diaphragm, the first cover comprisinga sensing element disposed on the second side of the semiconductor substrate, wherein the sensing element is configured to measure a pressure.2. The system of claim 1 , wherein the sensing element claim 1 , the diaphragm claim 1 , and the cover are mechanically coupled such that a pressure applied to the uniformly flat outermost surface of the first cover is in communication with the sensing element.3. The system of claim 1 , wherein the diaphragm includes a membrane region disposed on the first side of the semiconductor substrate.4. The system of claim 1 , wherein the sensing element is a piezoresistive network.5. The system of claim 1 , further comprising a second cover coupled to the second side of the semiconductor substrate such that the second cover overlays at least the sensing element.6. The system of claim 5 , wherein the ...

PIEZORESISTIVE MICROPHONE WITH ARC-SHAPED SPRINGS

The present disclosure relates to a design method for a piezoresistive-sensing-type microphone with an arc-shaped spring structure for ultra-miniaturization and high sensitivity. With the addition of the spring structure to the membrane, it is possible to minimize the membrane that has greater area for high sensitivity, and further, it is possible to minimize the area while providing the same effect as beam-shape springs and serpentine springs through an arc-shape spring design. A piezoresistor such as silicon nanowires with good piezoresistive properties as a sensing element is included in the spring structure to achieve high sensitivity, and the piezoresistor is placed in the spring structure at each location where the maximum tension occurs and where the maximum compression occurs through simulation. This allows both single-mode and differential-mode measurement, thereby ensuring the maximum resistance change and SNR. 1. A microphone comprising:a membrane;a spring structure that surrounds at least a part of the membrane, the spring structure spaced apart from the membrane;at least one first connecting part that connects the membrane to the spring structure;an anchor structure that surrounds at least a part of the spring structure, the anchor structure spaced apart from the spring structure;at least one second connecting part that connects the anchor structure to the spring structure;at least one piezoresistor formed on the spring structure; andat least one electrode disposed on the anchor structure to sense an electrical signal from a change of the piezoresistor,wherein the membrane, the spring structure, the first connecting part, and the second connecting part float in air by a cavity formed in the anchor structure.2. The microphone according to claim 1 , wherein deformation occurs in the membrane and the spring structure in response to sound pressure introduced from outside through the cavity claim 1 , and the deformation occurs to a greater extent in the ...

MICROMECHANICAL SENSOR SYSTEM AND CORRESPONDING MANUFACTURING METHOD

A micromechanical sensor system includes a micromechanical sensor chip surrounded at least laterally by a molded housing which has a front side and a rear side. The micromechanical sensor chip includes a chip area on the rear side, which is omitted from the molded housing, and a rewiring device formed on the rear side, which, starting from the chip area, extends to the surrounding molded housing on the rear side, and from there, past at least one via from the rear side to the front side of the molded housing. 1. A micromechanical sensor system comprising:a micromechanical sensor chip; anda molded housing;wherein the micromechanical sensor chip is surrounded at least laterally by the molded housing which includes a front side and a rear side, and wherein the micromechanical sensor chip includes a chip area on the rear side, wherein the chip area is not covered by the molded housing, and wherein a rewiring device is formed on the front side, said rewiring device extends, starting from the chip area, initially to the surrounding molded housing on the rear side, and subsequently past at least one via from the rear side to the front side of the molded housing.2. The micromechanical sensor system as recited in claim 1 , wherein the micromechanical sensor chip is affixed one of on the rear side or on the front side to a carrier substrate.3. The micromechanical sensor system as recited in claim 2 , wherein an isolation layer is provided at least one of on and in the front side in which the rewiring device is formed.4. The micromechanical sensor system as recited in claim 3 , wherein stress relief trenches are formed in the molded housing claim 3 , starting from at least one of the front side and the rear side in the periphery of the micromechanical sensor chip.5. The micromechanical sensor system as recited in claim 3 , wherein the chip area includes a diaphragm area.6. The micromechanical sensor system as recited in claim 5 , wherein the chip area includes at least one ...

RESISTIVE PRESSURE SENSOR INCLUDING PIEZO-RESISTIVE ELECTRODE

Provided is a pressure sensor including an elastic thin film including a first surface and a second surface that face each other, the elastic thin film including an elastomer material, a plurality of protruding deformable structures patterned on the first surface; a piezoresistive electrode formed along surfaces of the plurality of protruding deformable structures; and a counter electrode disposed to face the piezoresistive electrode. 1. A pressure sensor comprising:an elastic thin film comprising a first surface and a second surface that face each other, the elastic thin film comprising an elastomer material;a plurality of protruding deformable structures patterned on the first surface;a piezoresistive electrode formed along surfaces of the plurality of protruding deformable structures; anda counter electrode disposed to face the piezoresistive electrode.2. The pressure sensor of claim 1 , wherein the elastic thin film comprises at least one of thermoplastic rubber claim 1 , silicone rubber claim 1 , fluoro silicone rubber claim 1 , vinyl methyl silicone rubber claim 1 , styrene-butadiene rubber claim 1 , styrene-ethylene-butylene-strylene rubber claim 1 , acryl rubber claim 1 , butadiene rubber claim 1 , chloro isobutylene isoprene rubber claim 1 , polychloroprene rubber claim 1 , epichlorohydrin rubber claim 1 , ethylene propylene rubber claim 1 , ethylene propylene diene rubber claim 1 , polyether urethane rubber claim 1 , polyisoprene rubber claim 1 , isobutylene isoprene butyl rubber claim 1 , acrylonitrile butadiene rubber claim 1 , polyurethane rubber claim 1 , and polydimethylsiloxane (PDMS).3. The pressure sensor of claim 1 , wherein the piezoresistive electrode comprises a mixture of a flexible or elastic polymer material and a conductive material.4. The pressure sensor of claim 3 , wherein the conductive material comprises at least one of conductive polymer claim 3 , metal nanowire claim 3 , metal nanoparticles claim 3 , carbon nanotubes claim 3 , and ...

SEMICONDUCTOR DIE WITH PRESSURE AND ACCELERATION SENSOR ELEMENTS

In some implementations a semiconductor die comprises a semiconductor chip. The semiconductor chip comprises a piezoresistive pressure sensor element and at least one capacitive acceleration sensor element. The piezoresistive pressure sensor element is arranged to the side of the capacitive acceleration sensor element. In some implementations, a method for producing a semiconductor die includes applying an insulation layer to the semiconductor wafer. A section of the monocrystalline cover layer may be exposed by structuring the insulation layer. A semiconductor layer having a monocrystalline section and a polycrystalline section may be generated by deposition of a semiconductor material. 1. A semiconductor die comprising:a semiconductor chip, a piezoresistive pressure sensor element, and', 'at least one capacitive acceleration sensor element,, 'wherein the semiconductor chip compriseswherein the piezoresistive pressure sensor element is arranged to a side of the at least one capacitive acceleration sensor element.2. The semiconductor die of claim 1 ,wherein the piezoresistive pressure sensor element comprises a buried cavity.3. The semiconductor die of claim 2 ,wherein a gas pressure in the buried cavity is less than 15 mbar.4. The semiconductor die of claim 1 ,wherein the piezoresistive pressure sensor element comprises a membrane made from a monocrystalline semiconductor material.5. The semiconductor die of claim 1 ,wherein the acceleration sensor element is a multi-axial acceleration sensor element.6. The semiconductor die of claim 1 ,wherein the acceleration sensor element comprises a movable acceleration mass which is made of a polycrystalline semiconductor material.7. The semiconductor die of claim 1 , further comprising:a cover chip,wherein the cover chip is connected to the semiconductor chip by bonding.8. The semiconductor die of claim 7 ,wherein the acceleration sensor element comprises a movable acceleration mass which is made of a polycrystalline ...

PRESSURE DETECTION DEVICE AND PRESSURE SENSOR

Provided is a pressure detection device, wherein a pressure detection unit includes: a pressure detecting diaphragm; a second connection portion; and four strain resistance portions. One of either a first connection portion or the second connection portion is formed of a magnet, and the other of either the first connection portion or the second connection portion is formed of a magnet or a magnetic body. The first connection portion and the second connection portion are arranged such that the first connection portion and the second connection portion are attracted by a magnetic force in a state where a flow passage unit is mounted on the pressure detection unit. The four strain resistance portions are attached to a region of a second surface of a pressure detecting diaphragm other than a center portion. 1. A pressure detection device comprising:a flow passage unit in which a flow passage for introducing a fluid is formed;a pressure detection unit configured to detect a pressure of the fluid; anda mounting mechanism by which the flow passage unit is detachably mounted on the pressure detection unit, wherein a pressure receiving diaphragm configured to be displaced upon receiving the pressure of the fluid flowing through the flow passage on a first surface of the pressure receiving diaphragm; and', 'a first connection portion attached to a second surface of the pressure receiving diaphragm,, 'the flow passage unit includes a pressure detecting diaphragm having a first surface to which a pressure is to be transmitted from the first connection portion;', 'a second connection portion attached to a center portion of a second surface of the pressure detecting diaphragm; and', 'four strain resistance portions attached to the second surface of the pressure detecting diaphragm, the strain resistance portions being connected to each other so as to form a Wheatstone bridge circuit,, 'the pressure detection unit includesone of either the first connection portion or the second ...

Pressure sensor including deformable pressure vessel(s)

Techniques are described herein that perform pressure sensing using pressure sensor(s) that include deformable pressure vessel(s). A pressure vessel is an object that has a cross section that defines a void. A deformable pressure vessel is a pressure vessel that has at least one curved portion that is configured to structurally deform (e.g., bend, shear, elongate, etc.) based on a pressure difference between a cavity pressure in a cavity in which at least a portion of the pressure vessel is suspended and a vessel pressure in the pressure vessel.

METHOD FOR PRODUCING A MICROELECTROMECHANICAL COMPONENT AND WAFER SYSTEM

A method for producing a microelectromechanical component as well as a wafer system includes steps of: providing a first wafer having a plurality of microelectromechanical base elements; forming a respective container structure on the microelectromechanical base elements at the wafer level; and disposing an oil or a gel within the container structures. 111-. (canceled)12. A method for producing a microelectromechanical component , the method comprising:providing a first wafer with a plurality of microelectromechanical base elements;while the plurality of microelectromechanical base elements are on the first wafer, connecting a second wafer to the first wafer to attach at least one microelectromechanical or micromechanical structure on the microelectromechanical base elements, thereby forming a respective container structure around or on respective ones of the microelectromechanical base elements; anddisposing an oil or a gel within the container structures.13. The method of claim 12 , wherein:the disposing is of the oil;the disposing of the oil is performed by filling the oil into a filler opening in the container structure; andafter disposing the oil the filler opening is closed.14. The method of claim 12 , wherein:the microelectromechanical base elements are pressure sensors that each includes a respective pressure sensor diaphragm; andthe respective container structures are each disposed and developed such that an outer side of the pressure sensor diaphragm of the respective base element of the respective container structure is covered by the oil or gel disposed in the respective container structure.15. The method of claim 12 , wherein claim 12 , within the container structure claim 12 , in addition to the oil or the gel claim 12 , a respective application-specific integrated circuit (ASIC) is disposed and connected electrically and mechanically to the respective microelectromechanical base element.16. The method of claim 12 , wherein:the microelectromechanical ...

DIFFERENTIAL PRESSURE SENSOR INCORPORATING COMMON MODE ERROR COMPENSATION

A differential pressure sensor may provide a common mode corrected differential pressure reading. The differential pressure sensor may include two pressure sensing diaphragms. The pressure sensor may be configured so that the first diaphragm measures the differential pressure between two sections of a fluid. The pressure sensor may also be configured so that the second diaphragm measures the common mode error experienced by the die at the time the differential pressure is read by the first diaphragm. Electrical connectors may be configured so that the differential pressure outputs a common mode error corrected differential pressure reading based on the readings of the first and second diaphragm. 1. A differential pressure sensor comprising:a sensor housing including a base plate having a hole therein, wherein a first side of the base plate is configured to be in fluid communication with a first fluid at a first pressure and a second side of the base plate is configured to be in fluid communication with a second fluid at a second pressure;a first pressure sensing die assembly attached to the first side of the base plate, said first pressure sensing die assembly including: (1) a first pressure sensing die including a first diaphragm having an upper side configured to be in fluid communication with said first fluid and a lower side configured to be in fluid communication with said hole in said base plate and said second fluid; and (2) at least one pressure sensitive electrical element, formed in or on the first diaphragm, configured to exhibit a varying resistance responsive to deflection of said first diaphragm representative of a differential pressure between the first pressure and the second pressure;a second pressure sensing die assembly attached to the first side of the base plate, said second pressure sensing die assembly including: (1) a second pressure sensing die including a second diaphragm having an upper side configured to be in fluid communication with ...

MEASURING DEVICE FOR MEASURING A PHYSICAL QUANTITY

Disclosed is a measuring device for measuring a physical quantity. The physical quantity could be a pressure and/or a force. The measuring device comprises a circular sensing structure comprising a membrane section which is deflected by force variations acting on the circular sensing structure. A first and second strain gauge are attached to the membrane section. The first strain gauge is configured to measure radial strain in a first surface area of the membrane section. The second strain gauge is configured to measure tangential strain in a second surface area of the membrane section. An increase in force acting on the sensing structure results in shrinking of the first surface area measured by the first strain gauge and stretching of the second surface area measured by the second strain gauge. 1. A measuring device for measuring a physical quantity , the measuring device comprising:a circular sensing structure comprising a membrane section which is deflected by force variations acting on the circular sensing structure; and,a first strain gauge and second strain gauge attached to the membrane section, the first strain gauge configured to measure strain in a first surface area of the membrane section, the second strain gauge configured to measure strain in a second surface area of the membrane section, such that an increase in force acting on the sensing structure results in shrinking of the first surface area measured by the first strain gauge and stretching of the second surface area measured by the second strain gauge, the first strain gauge configured to measure radial strain in the membrane section and the second strain gauge configured to measure tangential strain in the membrane section.2. The measuring device according to claim 1 , wherein the first strain gauge and the second strain gauge are piezo-resistive elements.3. The measuring device according to claim 1 , wherein a resistance change in the first strain gauge due to a predefined increase in force is ...

DOUBLE-ACTING PRESSURE SENSOR

A pressure sensor includes a base having a bottom wall and a first sidewall enclosed with the bottom wall to form a first receiving space. A pressure sensitive film is located in the first receiving space and the peripheral portion of the pressure sensitive film is arranged on the first sidewall. An elastic cover has a top wall, a second sidewall, and a protrusion. The top wall and the second sidewall are enclosed to form a second receiving space. The second sidewall is located on the first sidewall of the base, the protrusion extends from the top wall to the second receiving space and makes contact with the pressure sensitive film, transferring an external pressure to the pressure sensitive film. The resistance of the pressure sensitive film is virtually linear corresponding to the external pressure. 1. A pressure sensor comprisinga base including a bottom wall and a first sidewall forming a first receiving space;a pressure sensitive film located in the first receiving space and having a peripheral portion arranged on the first sidewall, the pressure sensitive film having the resistance changed in a linear variation range within a pressure range; anda elastic cover including a top wall, a second sidewall, and a protrusion, the top wall and the second sidewall form a second receiving space, the second sidewall is positioned on the first sidewall of the base, and the protrusion extending from the top wall to the second receiving space contacts the pressure sensitive film so that a force from the external pressure is transferred to the pressure sensitive film, whereby the resistance of the pressure sensitive film changes in the linear variation range.2. The pressure sensor of claim 1 , wherein the height of the protrusion is larger than the height of the second sidewall.3. The pressure sensor of claim 1 , wherein the thickness of the pressure sensitive film is less than 1 mm.4. The pressure sensor of claim 1 , wherein the pressure sensitive film is selected from one ...

SEMICONDUCTOR PRESSURE SENSOR

Provided is a semiconductor pressure sensor which includes: five connection pads having plate shapes and formed of conductive materials, respectively, and arranged in parallel with each other; and four semiconductor resistance units connecting a predetermined pair of the connection pads to each other among the connection pads and having resistance values varying in proportion to a variation of a length due to the external pressure, wherein the five connection pads include a power supply pad, a first output voltage pad, a first ground pad, a second output voltage pad, and a second ground pad. 1. A semiconductor pressure sensor provided on a measurement target object to measure an external pressure applied to the measurement target object , the semiconductor pressure sensor comprising:five connection pads having plate shapes and formed of conductive materials, respectively, and arranged in parallel with each other; andfour semiconductor resistance units connecting a predetermined pair of the connection pads to each other among the connection pads and having resistance values varying in proportion to a variation of a length due to the external pressure,wherein the five connection pads include a power supply pad, a first output voltage pad, a first ground pad, a second output voltage pad, and a second ground pad,the power supply pad is disposed in a middle, the first output voltage pad and the first ground pad are disposed on one side of the power supply pad, and the second output voltage pad and the second ground pad are disposed on an opposite side of the power supply pad, andthe first output voltage pad connects the first ground pad to the power supply pad, and the second output voltage pad connects the second ground pad to the power supply pad.2. The semiconductor pressure sensor of claim 1 , wherein the five connection pads constitute a single full Wheatstone bridge.3. The semiconductor pressure sensor of claim 1 , wherein each of the semiconductor resistance units ...

Media isolated pressure sensor

A pressure sensor includes a pressure sensing element and a top cap. The pressure sensing element includes a bonded wafer substrate having a buried sealed cavity. A wall of the buried sealed cavity forms a sensing diaphragm. One or more sense elements may be supported by the sensing diaphragm and one or more bond pads are supported by the upper side of the bonded wafer substrate. Each of the bond pads may be positioned adjacent to the sensing diaphragm and electrically connected to one or more of the sense elements. The top cap may be secured to the upper side of the bonded wafer substrate such that an aperture in the top cap facilitates passage of a media in a downward direction to the sensing diaphragm. The top cap may be configured to isolate the bond pads from the media.

MICROELECTROMECHANICAL TRANSDUCER WITH THIN-MEMBRANE FOR HIGH PRESSURES, METHOD OF MANUFACTURING THE SAME AND SYSTEM INCLUDING THE MICROELECTROMECHANICAL TRANSDUCER

Microelectromechanical transducer comprising a semiconductor body, four cavities buried within the semiconductor body and four membranes, each membrane being suspended over a respective cavity and being capable of being deflected by the action of a pressure external to the microelectromechanical transducer; the microelectromechanical transducer further comprising four transducer elements housed by a respective membrane and electrically coupled to one another in a Wheatstone bridge configuration to convert said external pressure into an electrical signal. 1. A microelectromechanical transducer comprising:a monolithic semiconductor body;a first cavity, a second cavity, a third cavity, and a fourth cavity buried within the semiconductor body;a first membrane, a second membrane, a third membrane, and a fourth membrane covering the first cavity, the second cavity, the third cavity, and the fourth cavity, respectively, and forming a portion of a surface of the semiconductor body, the first, second, third, and fourth membranes being configured to deflect in response to an external pressure acting on the surface of the semiconductor body; anda first transducer element, a second transducer element, a third transducer element, and a fourth transducer element at least partially in the first, second, third, and fourth membranes, respectively, and electrically coupled to one another in a Wheatstone bridge configuration to convert the external pressure into an electrical signal.2. The microelectromechanical transducer according to claim 1 , wherein the first claim 1 , second claim 1 , third claim 1 , and fourth transducer elements are made of piezoresistive material claim 1 , and wherein:the first and third transducer elements are arranged so as to be subject to deformations caused by deflections of the first and third membranes, respectively, and thereby cause a reduction in resistance; andthe second and fourth transducer elements are arranged so as to be subject to deformations ...

PRESSURE-SENSING CIRCUIT, METHOD FOR DRIVING PRESSURE-SENSING CIRCUIT, AND DISPLAY DEVICE

A pressure-sensing circuit, a method for driving the pressure-sensing circuit and a display device are provided. The pressure-sensing circuit includes pressure-sensing gating lines arranged in rows, pressure-sensing reading lines arranged in columns, piezoresistance sensing circuits arranged in N rows and M columns, a pressure-sensing sub-circuit, a current input control circuit, and a current supply circuit for supplying a pressure-sensing current, where each of N and M is an integer greater than 1. The current input control circuit includes N current input control sub-circuits. The pressure-sensing sub-circuit is connected to each of the pressure-sensing reading lines and configured to perform a pressure-sensing operation in accordance with a voltage signal acquired from each of the pressure-sensing reading lines. 1. A pressure-sensing circuit , comprising pressure-sensing gating lines arranged in rows , pressure-sensing reading lines arranged in columns , piezoresistance sensing circuits arranged in N rows and M columns , a pressure-sensing sub-circuit , a current input control circuit , and a current supply circuit for supplying a pressure-sensing current , where each of N and M is an integer greater than 1;{'sup': th', 'th', 'th', 'th', 'th', 'th, 'a piezoresistance sensing circuit in an nrow and an mcolumn comprises a piezoresistance sensor in the nrow and the mcolumn and a switching circuit in the nrow and the mcolumn, where n is a positive integer smaller than or equal to N, and m+1 is a positive integer smaller than or equal to M;'}{'sup': th', 'th', 'th', 'th', 'th', 'th', 'th', 'th', 'th', 'th', 'th', 'th', 'th, 'a first end of the piezoresi stance sensor in the nrow and the mcolumn is connected to the pressure-sensing reading line in the mcolumn, a control end of the switching circuit in the nrow and the mcolumn is connected to the pressure-sensing gating line in the nrow, a first end of the switching circuit in the nrow and the mcolumn is connected to a ...

PRESSURE SENSOR, ACOUSTIC MICROPHONE, BLOOD PRESSURE SENSOR, AND TOUCH PANEL

According to one embodiment, a pressure sensor includes a film part, and a sensing unit. A circumscribing rectangle circumscribing a configuration of a film surface of the film part has a first side, a second side, a third side connected to one end of the first side and one end of the second side, a fourth side connected to one other end of the first side and one other end of the second side, and a centroid of the circumscribing rectangle. The circumscribing rectangle includes a first region enclosed by the first side, line segments connecting the centroid to the one end of the first side, and to the one other end of the first side. The sensing unit includes sensing elements provided on a portion of the film surface overlapping the first region. Each sensing element includes a first, second magnetic layers, and a spacer layer. 1: A sensor , comprising:a film part supported by a support unit, the film part being flexible, the film part having a film surface; anda sensing unit fixed to the film surface,the sensing unit including a first sensing group, and a second sensing group,the first sensing group including a plurality of first sensing elements, and the second sensing group including a plurality of second sensing elements,the first sensing elements being arranged along a first direction,the second sensing elements being arranged along the first direction,a distance in the first direction between two of the first sensing elements being shorter than a distance in a second direction between one of the first sensing elements and one of the second sensing elements, the second direction crossing the first direction,a distance in the first direction between two of the second sensing elements being shorter than the distance in the second direction between one of the first sensing elements and one of the second sensing elements,the first sensing elements being connected in series with each other, and the second sensing elements being connected in series with each other, ...

BURIED CAVITY SENSE DIE DIAPHRAGM STOP FOR FORCE SENSORS

A pressure sensor may comprise a first wafer comprising a plurality of recesses formed thereon; a second wafer bonded to the first wafer over the plurality of recesses, wherein the second wafer comprises a plurality of sensing diaphragms defined by an area of the second wafer disposed over each recess, and wherein the each recess forms a cavity between the first wafer and the second wafer; one or more sense elements supported by each sensing diaphragm, wherein the at least one sensing diaphragm is configured to contact a surface of the respective cavity to prevent overforce on the at least one sensing diaphragm, and wherein the one or more sense elements on the at least one sensing diaphragm continue to provide an indication of a pressure when the at least one sensing diaphragm is in contact with the surface of the respective cavity. 1. A pressure sensor comprising:a first wafer comprising a plurality of recesses formed thereon;a second wafer bonded to the first wafer over the plurality of recesses, wherein the second wafer comprises a plurality of sensing diaphragms, wherein each sensing diaphragm of the plurality of sensing diaphragms is defined by an area of the second wafer disposed over each recess of the plurality of recesses, and wherein the each recess of the plurality of recesses forms a cavity between the first wafer and the second wafer;one or more sense elements supported by each sensing diaphragm of the plurality of sensing diaphragms, wherein at least one sensing diaphragm of the plurality of sensing diaphragms is configured to flex toward a respective cavity in response to pressure, wherein the at least one sensing diaphragm is configured to contact a surface of the respective cavity to prevent overforce on the at least one sensing diaphragm, and wherein the one or more sense elements on the at least one sensing diaphragm continue to provide an indication of a pressure when the at least one sensing diaphragm is in contact with the surface of the ...

Pressure sensor, microphone, ultrasonic sensor, blood pressure sensor, and touch panel

A pressure sensor of an embodiment includes a support portion, a transformable membrane part and a sensor portion. The membrane part includes an end portion supported by the support portion, and a first area and a second area. The first area is positioned between a center of the membrane part and the end portion and has a first rigidity. The second area is positioned between the first area and the end portion, and has a second rigidity lower than the first rigidity. The sensor portion is provided at the first area and includes a first magnetic layer, a second magnetic layer and a first intermediate layer provided between the first magnetic layer and the second magnetic layer. An end-side distance between the first area and the end portion is shorter than a center-side distance between the second area and the center of the membrane part.

SENSOR DEVICE, PORTABLE APPARATUS, ELECTRONIC APPARATUS, AND MOVING OBJECT

An electronic apparatus includes: a pressure sensor including a diaphragm portion that is deflected and deformed under pressure; an acceleration sensor that detects acceleration in a normal direction of the diaphragm portion; and a control unit that corrects a detection result of the pressure sensor using a detection result of the acceleration sensor. The acceleration sensor detects acceleration about three axes orthogonal to one another. 1. A sensor device comprising:a pressure sensor including a diaphragm portion that is deflected and deformed under pressure;an acceleration sensor that detects acceleration in a normal direction of the diaphragm portion; anda correction unit that corrects a detection result of the pressure sensor using a detection result of the acceleration sensor.2. The sensor device according to claim 1 , whereinthe acceleration sensor detects acceleration about three axes orthogonal to one another.3. The sensor device according to claim 1 , further comprising a casing collectively accommodating the pressure sensor and the acceleration sensor and including an opening.4. The sensor device according to claim 3 , further comprising a pressure transmission medium in the form of liquid or gel filled in the casing.5. The sensor device according to claim 1 , whereinthe correction unit obtains the detection result of the pressure sensor at a first sampling frequency and obtains the detection result of the acceleration sensor at a second sampling frequency, which is a common multiple of the first sampling frequency, andthe correction unit makes corrections by synchronizing the detection result of the pressure sensor with the detection result of the acceleration sensor.6. The sensor device according to claim 1 , whereinthe pressure sensor includes a piezoresistive element provided in the diaphragm portion.7. The sensor device according to claim 1 , wherein a substrate in which the diaphragm portion is provided, and', 'a stacked structure forming a pressure ...

Pressure sensing element and pressure sensor

Disclosed is a pressure sensing element that is formed using a semiconductor substrate, the pressure sensing element including: a frame; a diaphragm that is supported by the frame; and a piezoresistor that is arranged on the diaphragm. The diaphragm includes a trench and a plurality of beams, the beams are arranged such that the beams connect a portion around an edge of the diaphragm to a portion around a center of the diaphragm and the beams cross each other in the portion around the center of the diaphragm, and a beam that is each of the beams includes a narrow portion that has a first width and a wide portion that has a second width wider than the first width.

CERAMIC PRESSURE SENSOR AND METHOD FOR PRODUCTION THEREOF

A method for production of a pressure sensor including a flat flexible membrane made of a ceramic material and a flat rigid support thereof made of a ceramic material is provided. Steps include: —establishing an electric circuit on the membrane; —establishing an electric contact with the outside on the support; —depositing an electrically conductive material on the support; —establishing an electrical and mechanical coupling between the membrane and the support. The electrical coupling between the membrane and the support are performed by deposition and sintering of at least one layer of an electrically conductive sinterable electrical connection material. The mechanical coupling between the membrane and the support are performed by deposition and sintering of at least one layer of sinterable mechanical connection material that is electrically insulating and/or isolated from the layer of sinterable electrical connection material. The layer of sinterable electrical connection material and the layer of sinterable mechanical connection material undergo re flow together in a single step in a sintering furnace. 1. A method for production of a pressure sensor comprising a flat flexible membrane made of a ceramic material and a flat rigid support thereof made of a ceramic material , comprising:establishing an electric circuit on the membrane;establishing an electric contact with the outside on the support;depositing an electrically conductive material on the support;establishing an electrical and mechanical coupling between the membrane and the support;wherein the electrical coupling between the membrane and the support is performed by deposition and sintering of at least one layer of electrically conductive sinterable electrical connection material,wherein the mechanical coupling between the membrane and the support is performed by deposition and sintering of at least one layer of sinterable mechanical connection material that is electrically insulating and/or isolated ...

Pressure Sensor Module for Wearable Applanation Tonometer

An interface pressure sensor includes a fluid pressure sensor disposed in a volume defined by a shear wall. The volume is enclosed, and the fluid pressure sensor is encapsulated by, an infill material. The infill material defines a sensing surface that, when pressed, can impart a force that is detectable by the fluid pressure sensor. The interface pressure sensor can be used for applanation tonometry. 1. An electronic device configured for biometric sensing , the electronic device comprising:a sensing surface configured to detect pressure variations deforming an external surface of an object; and a stiffener;', 'a substrate supported by the stiffener;', a first frame coupled to the substrate and defining a first volume;', 'a first fluid pressure sensor disposed within the first volume; and', 'a first infill encapsulating the first fluid pressure sensor within the first volume and at least partially defining the sensing surface; and, 'a first pressure sensing module disposed on the substrate and comprising, a second frame coupled to the substrate and defining a second volume;', 'a second fluid pressure sensor disposed within the second volume; and', 'a second infill encapsulating the first fluid pressure sensor within the second volume and at least partially defining the sensing surface., 'a second pressure sensor modules disposed on the substrate, offset from the first pressure sensing module and comprising], 'an interface pressure sensing system at least partially defining the sensing surface, the interface pressure sensing system comprising2. The electronic device of claim 1 , further comprising a processor operably coupled to the interface pressure sensing system and operable to:receive a first output from the first fluid pressure sensor; andreceive a second output from the second fluid pressure sensor.3. The electronic device of claim 1 , wherein:the object is a user of the electronic device;the external surface is an epidermis region of the user.4. The ...

Pressure Sensing in Portable Electronic Devices

An interface pressure sensor includes a fluid pressure sensor disposed in a volume defined by a shear wall. The volume is enclosed, and the fluid pressure sensor is encapsulated by, an infill material. The infill material defines a sensing surface that, when pressed, can impart a force that is detectable by the fluid pressure sensor. 1. An electronic device comprising: an interior surface; and', 'an exterior surface opposite the interior surface;, 'an enclosure defining an outer shear wall defining a module volume; and', an inner shear wall defining a sensor volume;', 'a fluid pressure sensor disposed within the sensor volume; and', 'an infill encapsulating the fluid pressure sensor within the sensor volume; and, 'an array of pressure sensor modules within the module volume, each pressure sensor module comprising, 'an encapsulation encapsulating the array of pressure sensor modules within the module volume., 'an interface pressure sensor at least partially coupled to the interior surface, the interface pressure sensor comprising2. The electronic device of claim 1 , comprising a processor operably coupled to the interface pressure sensor and configured to receive claim 1 , as input claim 1 , an output of the interface pressure sensor that corresponds to a pressure applied to the exterior surface of the enclosure.3. The electronic device of claim 1 , wherein the outer shear wall is configured to redirect shear forces applied to the interface pressure sensor.4. The electronic device of claim 3 , wherein each respective inner shear wall of each respective pressure sensor module of the array of pressure sensor modules is configured to redirect shear forces applied to the interface pressure sensor.5. The electronic device of claim 1 , comprising a display defining at least a portion of the interior surface such that a pressure applied to the display is received by the interface pressure sensor.6. The electronic device of claim 1 , wherein each respective infill of each ...