Bewertungsverfahren für Halbleiterwafer sowie Herstellungsverfahren für Halbleiterwafer

Bereitgestellt wird ein Verfahren zur Bewertung von Halbleiterwafern, einschließend: Aufnahme eines Querschnittsbildes eines zu bewertenden Halbleiterwafers; wobei das Querschnittsbild einen Grenzbereich einschließt zwischen einer abgeschrägten Oberfläche eines äußeren Randbereichs eines Wafers und einer Waferoberfläche, welche zu der abgeschrägten Oberfläche benachbart ist; Anfertigung eines vergrößerten Bildes des aufgenommenen Querschnittsbildes durch Vergrößern des aufgenommenen Querschnittsbildes in allein der Wafer-Dickenrichtung; sowie Bewerten einer Form des Grenzbereichs im angefertigten vergrößerten Bild.

VERFAHREN UND VORRICHTUNG ZUR DETEKTION VON MUSTERFEHLERN.

TOPOGRAFISCHE REKONSTRUKTION EINER PROBE

Ausrichtverfahren zur Verwendung in einer Halbleiterinspektionsvorrichtung

Es wird ein Ausrichtverfahren zur Verwendung in einer Halbleiterinspektionsvorrichtung (10) offenbart. Die Halbleiterinspektionsvorrichtung (10) weist einen Objekttisch (11) und einen Berührungssteuerbildschirm (13) auf. Das Ausrichtverfahren weist Folgendes auf: Definieren einer Referenzrichtung, Anzeigen eines Bilds (191) eines durch den Objekttisch (11) unterstützten Messobjekts (19) auf dem Berührungssteuerbildschirm (13), Detektieren eines ersten Berührungspunkts (231) und eines zweiten Berührungspunkts (132), die sich auf dem Berührungssteuerbildschirm (13) ergeben, Definieren einer geraden Linie entsprechend dem ersten Berührungspunkt (231) und dem zweiten Berührungspunkt (132), Berechnen eines durch die Gerade und die Referenzrichtung definierten eingeschlossenen Winkels θund Drehen des Objekttisches (11) entsprechend dem eingeschlossenen Winkel θ.

Image processing device for objects, determines angle of inclination based upon edge detection

The image processing is carried out by a system that has a camera (90) coupled to a computer (101) that provides output to an operations unit (102). The image data is subjected to an edge detection process to provide input to the computer to determine any changes in a direction, and so determines the angle of inclination. Independent claims are included for an image processing method.

An electronic component authentication system

Methods for analysis of silicon chips and other electrical components are presently slow, often requiring much human intervention. An electronic component authentication system is provided comprising apparatus for obtaining images, of an electronic component to be authenticated, in the visible spectrum, the infrared spectrum, and the ultraviolet spectrum, the system further comprising apparatus for obtaining X-ray images of the electronic component and for processing at least some of those X-ray images to provide a 3D tomosynthesis image of the electronic component, the system further comprising a processor configured to analyse the obtained images to ascertain criteria relating to the electronic component for use in authenticating it against a set of known criteria.

MITTELPUNKTBESTIMMUNG VON JUSTIERMARKEN

WAS BASED INSPECTION OF PRINTED PRINTED CIRCUIT BOARDS

A MORPHOLOGIC INSPECTION PROCEDURE BASED ON SKELETON FORMATION

WAS BASED CLASSIFICATION OF PIXELS IN THE INSPECTION OF ARTICLES

SYSTEM AND METHOD FOR PROCESS VARIATION MONITOR

A METHOD OF LOCAL TRACING OF CONNECTIVITY AND SCHEMATIC REPRESENTATIONS PRODUCED THEREFROM

A schematic diagram detailing a circuit that was reverse engineered from a plurality of images taken of the circuit is provided. The schematic diagram comprises at least one circuit element that was represented as an object in at least one of the plurality of images, such that signal continuity information was determined through local tracing of connectivity between a first image and a second image of the plurality of images. A method of tracing the connectivity within the plurality of images to produce the schematic diagram is also disclosed.

Submicron wafer alignment

WAFER SINGULATION PROCESS CONTROL

Pattern evaluating apparatus, pattern evaluating method and program

Solar cell broken gate defect detection method based on convolutional neural network

Submicron wafer alignment

DETECTION OF DEFECTS CONTAINING CHARACTERISTICS

L'invention concerne un procédé d'inspection d'un substrat configuré, caractérisé en ce qu'il comprend les étapes consistant à : a. préparer une image de référence et une image de test (610); b. extraire des particularités à partir de l'image de référence et extraire des particularités à partir de l'image de test (620); c. mettre en concordance des particularités de l'image de référence et les particularités de l'image de test (625); et d. comparer des particularités de l'image de référence et de l'image de test afin d'identifier des défauts (630). L'invention concerne aussi un appareil correspondant ainsi qu'un produit programme informatique comprenant un support lisible par ordinateur contenant des instructions de commande d'un système informatique caractérisé en ce que ces instructions consistent à mettre en oeuvre les étapes citées ci-dessus.

PROCESS OF CHARACTERIZATION Of a REASON

La présente invention concerne un procédé de caractérisation d'un motif comportant les étapes de : - détermination d'une image du contour du motif à caractériser au moyen d'une instrumentation d'imagerie ; - traitement de ladite image incluant la détermination d'une pluralité de points localisés le long dudit contour et échantillonnés selon un pas d'échantillonnage donné ; - pour chaque point, identification d'un point localisé sur un contour de référence et correspondant au même numéro de pas d'échantillonnage et détermination d'un coefficient intermédiaire sans dimension représentatif de l'écart entre ledit point et le point correspondant sur ledit contour de référence ; - détermination d'un coefficient final sans dimension à partir de l'ensemble des coefficients intermédiaires correspondant à ladite pluralité de points, ledit coefficient final étant représentatif de l'écart entre le contour du motif à caractériser et le contour de référence.

PROCESS OF FOLLOW-UP IN REAL-TIME OF the EVOLUTION Of a DIFFRACTING REASON

Method for realization of an image of reference synthesized for the inspection of objects

Procédé de réalisation d'une image de référence synthétisée pour l'inspection d'objets. A partir d'une image descriptive de l'objet à inspecter, on effectue les opérations suivantes: détermination (110), dans l'image descriptive, d'éléments caractéristiques de l'objet; détermination (204) des coordonnées des éléments caractéristiques dans l'image descriptive acquisition (202) d'au moins une image réelle de l'objet définie dans un second format relatif à la prise de vues; prélèvement (224), sur l'image réelle de l'objet, d'échantillons contenant chacun l'image réelle d'au moins un élément caractéristique centrage (226) des échantillons; positionnement (300) des échantillons sur l'image descriptive. Application à l'inspection des circuits intégrés.

PROCESS OF DETECTION OF DEFECTS AND MEANS OF MEMORY FOR THE IMPLEMENTATION OF THIS ONE

La présente invention concerne un procédé de détection de défauts. Il comprend les étapes consistant à : (a) acquérir (310) une première image d'un objet à inspecter et une deuxième image associée; (b) aligner (320) la première image avec la deuxième image; (c) créer (330) un premier tracé en traçant les niveaux de gris des pixels provenant de la première image en fonction des niveaux de gris des pixels correspondants provenant de la deuxième image; (d) créer (340) un deuxième tracé en filtrant le premier tracé; (e) créer (350) un masque tel que le profil du masque est défini par la configuration du deuxième tracé; et (f) utiliser (380) le masque pour détecter des défauts représentés dans la première image. Un filtrage (340) peut être exécuté en utilisant un filtre morphologique. Une extension du masque peut être ajustée (360) par l'utilisateur. L'invention concerne en outre un support lisible par informatique utilisé pour la mise en oeuvre de ce procédé.

FAULT DETECTION METHOD AND DEVICE THEREFOR

FAULT DETECTION METHOD AND DEVICE THEREFOR

L'invention concerne un procédé de détermination de la taille d'un défaut de type trou sur une face supérieure d'une structure comprenant une couche superficielle disposée sur un substrat, ledit défaut étant situé dans la couche superficielle ; le procédé comprenant : a) une étape d'introduction de la structure dans un dispositif de microscopie en champ sombre par réflexion pour générer, à partir d'un rayon lumineux diffusé par la face supérieure, un premier signal de défauts et un second signal de rugosité ; b) une étape de capture sur une pluralité de pixels de l'intensité du second signal de rugosité ; Le procédé étant remarquable en ce qu'il comprend en outre : c) une étape de traitement pour comparer l'intensité captée par chaque pixel avec celles captées par des pixels voisins et définir si ledit pixel est inclus dans une zone anormale ; d) une étape d'extraction de l'écart-type des valeurs des intensités captées par les pixels de la zone anormale ; e) une étape de détermination de ...

PATTERN MATCHING APPARATUS AND RECORDING MEDIUM

METHODS AND SYSTEMS FOR DETECTING DEFECTS ON A RETICLE

PATTERN INSPECTION METHOD AND INSPECTION APPARATUS

MONITORING CHANGES IN PHOTOMASK DEFECTIVITY

DEFECT INSPECTION METHOD

기판 처리 장치, 기판 처리 방법 및 그 기판 처리 방법을 실행시키기 위한 프로그램을 기록한 컴퓨터 판독 가능한 기록 매체

... 본 발명은 주변 노광과 기판 검사 중 어느 한쪽의 처리에 이용되는 부분에 이상이 발생했을 때에, 기판 처리가 정지하는 것을 방지할 수 있는 기판 처리 장치를 제공하는 것을 목적으로 한다. 기판 유지부(33)에 유지된 기판을 회전 구동부(34)에 의해 회전시키면서, 기판의 주변부에 광을 조사하여 주변 노광 처리를 수행하는 주변 노광부(50)와, 기판을 이동 구동부(35)에 의해 이동시키면서, 기판을 촬상한 화상에 기초하여 기판 검사 처리를 수행하는 기판 검사부(70)와, 제어부(80)를 갖는다. 제어부(80)는 정해진 기판 처리에 주변 노광 처리가 포함되어 있으면, 정해진 기판 처리를 정지시키고, 기판 검사부(70)에 이상이 발생했을 때, 주변 노광부(50) 및 반송부(32) 모두에 이상이 발생하지 않았고, 정해진 기판 처리에 기판 검사 처리가 포함되어 있으면, 기판 검사 처리를 스킵하도록 제어한다.

METHOD FOR RECOGNIZING PATTERN OF ALIGN MARK ON WAFER

패턴 검사 장치 및 패턴 검사 방법

... 본 발명의 일 태양의 패턴 검사 장치는, 제1 검사광의 조명 형상을 변경 가능한 투과 조명 광학계와, 대물 렌즈와 편광 소자를 가지며, 대물 렌즈와 편광 소자를 이용하여 마스크 기판에 제2 검사광을 조명하고 마스크 기판으로부터의 반사광을 통과시키는 반사 조명 광학계와, 편광 소자를 광로 외부로부터 광로 상으로 이동시키는 것이 가능하고 또한 편광 소자를 광로 상으로부터 광로 외부로 이동시키는 것이 가능한 구동 기구와, 스테이지가 이동하는 중에 제1 검사광이 조명된 마스크 기판으로부터의 투과광을 수광하는 센서와, 마스크 기판과 센서의 사이에 배치되며, 마스크 기판으로부터 대물 렌즈로 투과광이 입사 가능한 개구수(NA)가 고개구수인 상태와 저개구수인 상태의 사이에서 전환 가능해지도록 상기 투과광의 광속 직경을 조정하는 개구 조리개를 구비한 것을 특징으로 한다.

POLARIZED IMAGE OBTAINING APPARATUS, PATTERN INSPECTING APPARATUS, POLARIZED IMAGE OBTAINING METHOD AND PATTERN INSPECTING METHOD

COMPOSITE DEFECT CLASSIFIER

DEFECT CLASSIFICATION USING TOPOGRAPHICAL ATTRIBUTES

타겟 콤포넌트 및 기준 콤포넌트에 대한 일관된 변조를 사용하여 제조된 타깃 콤포넌트에서의 결함을 검출하기 위한 시스템, 방법, 및 컴퓨터 프로그램 제품

... 타겟 콤포넌트와 기준 콤포넌트 사이의 일관된 변조를 갖는 제조된 디바이스가 제공된다. 제조된 디바이스는 제1 변조를 갖는 타겟 콤포넌트를 포함한다. 제조된 디바이스는 제1 기준 콤포넌트 및 제2 기준 콤포넌트를 포함하는 타겟 콤포넌트를 위한 적어도 2개의 기준 콤포넌트를 더 포함하고, 제1 기준 콤포넌트 및 제2 기준 콤포넌트는 각각 제1 변조를 갖는다. 또한, 타겟 콤포넌트 및 기준 콤포너트에 대하여 일관된 변조를 사용하여 제조된 타겟 콤포넌트에서의 결함을 검출하기 위한 시스템, 방법, 및 컴퓨터 프로그램 제품이 제공된다.

METHOD AND SYSTEM FOR DIAGNOSING SEMICONDUCTOR WAFER

A method and system for diagnosing a semiconductor wafer are provided. A target image is obtained according to graphic data system (GDS) information of a specific layout in the semiconductor wafer, wherein the target image includes a first contour having a first pattern corresponding to the specific layout. Image-based alignment is performed to capture a raw image from the semiconductor wafer according to the first contour. The semiconductor wafer is analyzed by measuring the raw image, so as to provide a diagnostic result. Accordingly, the present invention can reduce the tooling time of image capturing mechanism and stabilize a process capability index. COPYRIGHT KIPO 2017 (S110) Obtain a target image according to GDS information (S120) Perform image-based alignment to collect a raw image according to the target image (S130) Analyze a semiconductor wafer according to the target image to provide a diagnostic result ...

COMPUTER-IMPLEMENTED METHODS AND SYSTEMS FOR CLASSIFYING DEFECTS ON A SPECIMEN

Various computer-implemented methods for classifying defects on a specimen are provided. One method includes assigning individual defects detected on the specimen to defect groups based on one or more characteristics of the individual defects. The method also includes displaying information about the defect groups to a user. In addition, the method includes allowing the user to assign a classification to each of the defect groups. Systems configured to classify defects on a specimen are also provided. One system includes program instructions executable on a processor for assigning individual defects detected on the specimen to defect groups based on one or more characteristics of the individual defects. The system also includes a user interface configured for displaying information about the defect groups to a user and allowing the user to assign a classification to each of the defect groups. © KIPO & WIPO 2008 ...

METHOD FOR TESTING SEMICONDUCTOR DEVICE CAPABLE OF IMPROVING PRECISION OF DEFECT TEST IN BALL OR PRINTED CIRCUIT BOARD

PURPOSE: A method for testing a semiconductor device is provided to improve precision of a defect test in a ball or a printed circuit board of the semiconductor device by obtaining a lighting image and a coaxial image. CONSTITUTION: A light image is obtained as light image information(S10). A coaxial image is obtained as coaxial image information(S20). An annular image is obtained by subtracting the coaxial image information from the lighting image information(S30). A region between inner and outer diameters are uniformly divided(S40). A binary value of the divided region is analyzed(S50). It is judged whether there are pixels having a binary value of 1 in the divided regions(S60). When there is at least one pixel having a binary value of 1, it is judged that a corresponding region is a normal(S70). It is judged whether a rate of the normal region is equal to or greater than a set value(S80). When the rate of the normal region is equal to or greater than a set value, it is judged that a ...

Method of inspecting a wafer

APPARATUS AND METHOD FOR MEASURING PROCESS ERROR AND APPARATUS AND METHOD FOR MEASURING OVERLAY BY USING THE SAME

PURPOSE: A method for measuring a process error is provided to minimize a process error occurring in each area of a measuring target by feeding back a correction value in each area on the measuring target so that the correction value is reflected in a unit process. CONSTITUTION: At least two areas on the measuring target on which a predetermined unit process is finished are designated(S10). A process error value in each area is detected(S12). A correction value in each area is calculated from the process error value(S14). The calculated correction value is fed back to a previous unit process apparatus(S16). © KIPO 2003 ...

다이 내부 검사에 있어서의 등록 및 설계 주변부에서 야기된 노이즈의 저감

... 다이 내부 검사에서 관심 패턴(POI) 이미지 등록 및 POI 주변부 설계 패턴에서 야기되는 노이즈가 감소된다. POI는 동시발생하는 주변 등록 타겟들에 의해 정렬 그룹으로 그룹화된다. 정렬 그룹은 동시발생하는 근접한 등록 타겟들을 사용하여 등록된다. 관심 패턴 각각이 이상치인 정도를 측정할 수 있는 투표에 의한 등록이 수행된다. POI는 동일한 주변 설계 효과를 가진 적어도 하나의 주변 그룹으로 그룹화된다.

표준 기준 이미지로부터 결정된 속성에 기초한 결함 검출 및 분류

... 웨이퍼 상의 검출된 결함들을 분류하기 위한 시스템 및 방법이 제공된다. 하나의 방법은 검사 시스템에 의해 웨이퍼를 위해 생성된 출력에 기초해서 웨이퍼 상의 결함들을 검출하는 단계를 포함한다. 본 방법은, 결함들 중 적어도 하나의 결함에 대응하는 표준 기준 이미지의 부분들에 기초해서 결함들 중 적어도 하나의 결함을 위한 하나 이상의 속성들을 결정하는 단계를 또한 포함한다. 본 방법은 하나 이상의 결정된 속성에 적어도 부분적으로 기초해서 결함들 중 적어도 하나의 결함을 분류하는 단계를 더 포함한다.

MICROSTRUCTURE INSPECTION METHOD, MICROSTRUCTURE INSPECTION APPARATUS, AND MICROSTRUCTURE INSPECTION PROGRAM

대량의 패턴 서칭을 위한 검사와 디자인 간의 드리프트의 자동 보정 시스템 및 방법

... 대량의 패턴 서치를 위한 검사와 디자인 간의 드리프트의 자동 보정 시스템 및 방법이 여기에 개시된다. 결함이 웨이퍼의 스캔에서 식별된다. 결함은 툴 좌표와 연관된다. SEM 검토 툴이 센터링된 결함 이미지를 캡처링한다. SEM 검토 툴은 임포팅된 디자인 파일 내의 디자인 다각형을 이용하여 웨이퍼와 정렬된다. 디자인 좌표가 익스포팅되어, 관심 패턴을 규정하고 그 관심 패턴의 위치를 식별하는 데에 사용된다.

SURFACE INSPECTING APPARATUS

A wafer (W) to be inspected is placed on an XY stage (1), and after an area to be inspected is positioned below an objective lens (2), inspecting images (R, B, G signals) are photographed by a camera (3). Then, a fetched reference image and the inspection image are converted into hue by a computer (4). Then, the both images converted into hue are compared, and based on the results, defects are inspected. At that time, as for a pixel, which has a table of combination of values (R, G, B) having high possibility of generating pseudo defects in defect detection and has the values (R, G, B) existing on the table among the reference images, defects are not regarded as defects even when they are detected. © KIPO & WIPO 2008 ...

METHOD AND APPARATUS FOR MEASURING PATTERN CD OF SEMICONDUCTOR DEVICE USING REFERENCE PATTERNS FOR IMPROVING EXACTNESS OF CD MEASUREMENT IN REAL PATTERN

PURPOSE: A method and apparatus for measuring a pattern CD(Critical Dimension) of a semiconductor device are provided to obtain stably an exact CD from a real pattern by using a variety of reference patterns. CONSTITUTION: A plurality of reference patterns are set(ST12). One out of the plurality of reference patterns is designated corresponding to CD of a real pattern of a semiconductor substrate(ST14). The real pattern is compared with the corresponding reference pattern by overlapping the corresponding reference pattern with the real pattern on the semiconductor substrate(ST18). The real pattern is reconciled with the corresponding reference pattern by adjusting the real pattern or the corresponding reference pattern(ST19). The CD of the real pattern is measured(ST20). © KIPO 2006 ...

광학적 검사 및 광학적 리뷰로부터의 결함 속성에 기초한 전자 빔 리뷰를 위한 결함 샘플링

... 전자 빔 리뷰를 위한 결함 샘플을 생성하기 위한 다양한 실시형태가 제공된다. 하나의 방법은, 결함 단위 기반으로, 결함이 검출되었던 웨이퍼의 광학적 검사에 의해 결정되는 결함에 대한 하나 이상의 제1 속성을, 웨이퍼의 광학적 리뷰에 의해 결정되는 결함에 대한 하나 이상의 제2 속성과 결합하여, 결함에 대한 결합된 속성을 생성하는 것을 포함한다. 방법은 또한, 결함에 대한 결합된 속성에 기초하여 결함을 빈으로 분리하는 것을 포함한다. 빈은 상이한 결함 분류에 대응한다. 또한, 방법은, 빈 ― 결함이 이 빈으로 분리되었음 ― 에 기초하여, 전자 빔 리뷰를 위한 결함 중 하나 이상을 샘플링하여, 전자 빔 리뷰를 위한 결함 리뷰 샘플을 생성하는 것을 포함한다.

REGISTRATION OF CAD DATA WITH SEM IMAGES

An image processing method includes providing a microscopic image of a structure manufactured on a substrate and computer-aided design (CAD) data used in manufacturing the structure. The microscope image is processed by a computer to generate a first directionality map which includes, for a matrix of points in the microscopic image, respective directionality vectors corresponding to magnitudes and directions of edges at the points irrespective of a sign of the magnitudes. The CAD data are processed by the computer to calculate a simulated image based on the CAD data, and to generate a second directionality map based on the simulated image. The first and the second directionality maps are compared by the computer to register the CAD data and the microscope image. COPYRIGHT KIPO 2016 ...

METHOD AND SYSTEM FOR WAFER REGISTRATION CAPABLE OF INSPECTING A WAFER EDGE WITHOUT AN EXCLUSIVE STAGE

PURPOSE: A method and a system for wafer registration are provided to reduce the time of a wafer inspection cycle by not using a preliminary alignment system for arranging a notch of the wafer. CONSTITUTION: A wafer is moved by an X-Y stage. A wafer edge area image(42) is obtained. The wafer edge area image is processed to find the location of the edge of the wafer. A notch or flat of the wafer are detected. An alignment of the wafer is decided base on at least one of the positions and the shape of the edge. COPYRIGHT KIPO 2012 ...

Process robust overlay metrology based on optical scatterometry

An e-beam defect review system

The present invention relates a defect review system, and/or particularly, to an apparatus and method of defect review sampling, review method and classification on a semiconductor wafer or a pattern lithography reticle during integrated circuit fabrication. These objects are achieved in comparing a reviewed image with a reference image pick-up through a smart sampling filter. A clustering computer system base on high speed network will provide data cache and save operation time and memory. A smart review sampling filter automatically relocate abnormal pattern or defects and classify the device location extracted from design database and/or from golden die image on the same substrate. The column of the present defect review system is comprised of the modified SORIL type objective lens. This column provides solution of improving throughput during sample review, material identification, better image quality, and topography image of defect. One embodiment of the present invention adopts an ...

Computer-implemented method, non-transitory computer-readable medium, and system for detecting defects on a wafer

Methods and systems for detecting defects on a wafer using defect-specific information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest formed on the wafer and a known DOI occurring proximate to or in the pattern of interest. The information includes an image of the target on the wafer. The method also includes searching for target candidates on the wafer or another wafer. The target candidates include the pattern of interest. The target and target candidate locations are provided to defect detection. In addition, the method includes detecting the known DOI in the target candidates by identifying potential DOI locations in images of the target candidates and applying one or more detection parameters to images of the potential DOI locations.

Pattern-measuring apparatus and semiconductor-measuring system

It is an object of the present invention to provide a semiconductor-measuring system and a pattern-measuring apparatus capable of obtaining an evaluation result for appropriately selecting a treatment intended for a semiconductor device. To achieve this object, there is proposed in the present invention a pattern-measuring apparatus provided with an arithmetic unit for comparing the circuit pattern of the electronic device and a reference pattern. The arithmetic unit classifies the circuit pattern in circuit-pattern treatment units on the basis of a comparison between the measurement result between the circuit pattern and the reference pattern, and at least two thresholds.

Systems and methods for automatically verifying correct die removal from film frames

A skeleton wafer inspection system includes an expansion table displaceable relative to a camera configured for capturing segmental images of a skeleton wafer on a film frame. During segmental image capture, illumination is directed to the top and/or bottom of the film frame. Segmental images are digitally stitched together to produce a composite image, which can be processed to identify die presence or absence therein at active area die positions having counterpart die positions in a process wafer map. A composite image of a diced wafer on a film frame can also be generated, and used as a navigation aid or guide during die sort operations, or to verify whether a die sort apparatus has correctly detected a reference die prior to die sort operations. A composite image of a skeleton wafer can similarly be generated for use as a navigation aid or guide for film frame repopulation operations.

Systems and methods for region-adaptive defect detection

A defect detection method includes acquiring a reference image; selecting a target region of the reference image; identifying, based on a matching metric, one or more comparative regions of the reference image corresponding to the target region; acquiring a test image; masking the test image with the target region of the reference image and the one or more comparative regions of the reference image; defining a defect threshold for the target region in the test image based on the one or more comparative regions in the test image; and determining whether the target region of the test image contains a defect based on the defect threshold.

Alignment apparatus

The present invention, in an alignment apparatus for detecting an alignment mark of a wafer, provides a technology to detect the circumference of a wafer with a high precision. The apparatus of the present invention comprises: an imaging unit for imaging from the bottom side of the wafer for forming a strip-shaped imaging area extended in the direction of the diameter of the wafer over the edge of the wafer; a rotating unit for rotating the mounting unit where the wafer is mounted; an irradiating unit for irradiating light toward the imaging area from the bottom surface side of the wafer; and a reflecting member for reflecting the light irradiated toward the top of the wafer through the external side of the wafer toward the imaging area and to make the brightness of the external side of the wafer greater than the brightness of the circumference of the wafer in a brightness distribution pattern in the direction of the diameter of the wafer obtained by imaging the imaging area. Based on the ...

Air pocket detection methods and systems

Methods and systems for use in detecting an air pocket in a single crystal material are described. One example method includes providing a matrix including a plurality of data units, the plurality of data units including image data related to a region of interest of the single crystal material; determining, by a processor, a difference between data units of the matrix and a corresponding data unit of the matrix, wherein the corresponding data unit is defined by a first operation of the matrix; calculating, by the processor, a first index value based on the differences of the corresponding data units; and identifying an air pocket within the single crystal material based on the first index value and a predetermined threshold.

Multi-dimensional model of optical dispersion

Methods and systems for estimating values of parameters of interest from optical measurements of a sample early in a production flow based on a multidimensional optical dispersion (MDOD) model are presented herein. An MDOD model describes optical dispersion of materials comprising a structure under measurement in terms of parameters external to a base optical dispersion model. In some examples, a power law model describes the physical relationship between the external parameters and a parameter of the base optical dispersion model. In some embodiments, one or more external parameters are treated as unknown values that are resolved based on spectral measurement data. In some embodiments, one or more external parameters are treated as known values, and values of base optical dispersion model parameters, one or more external parameters having unknown values, or both, are resolved based on spectral measurement data and the known values of the one or more external parameters.

Variation-based segmentation for wafer defect detection

Defects of interest and nuisance can be separated into different segments which enables detection of the defects of interest in only one segment. A region of an image can be segmented into a plurality of segments. A range attribute of the segments can be determined. Thresholding can be used to select one of the segments from the range attribute. The segment that is selected can be dilated.

Reference image generation for semiconductor applications

Methods and systems for generating a reference image for use in a process performed for a specimen are provided. One system includes a virtual system configured to receive output generated by actual systems for specimens, each of which has device areas of the same type formed thereon. The virtual system is configured for identifying defective portions of the device areas based on the output generated for the specimens by at least two of the actual systems and eliminating the defective portions of the device areas from the device areas in which the defective portions were identified to thereby generate remaining portions of the device areas. In addition, the virtual system is configured for generating a reference image from the output generated for the remaining portions of at least one device area on a first of the specimens and at least one device area on a second of the specimens.

Image processing method, image processor and bonding device

The object of the present invention is to highly accurately detect a position without performing pattern matching in a rotating direction even in the case that a detection object is arranged in a posture including a position deviation in the rotating direction and to efficiently execute the generation of a mask pattern. To solve the problem, inter-image subtraction is performed between a detection object image and a template image decided by a reticule mark 42 and a mark pattern image is generated/stored by utilizing the result (area hatched). In runtime, the area corresponding to the mask pattern image is excluded from the object of pattern matching.

METHODS FOR GENERATING A STANDARD REFERENCE DIE FOR USE IN A DIE TO STANDARD REFERENCE DIE INSPECTION AND METHODS FOR INSPECTING A WAFER

Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer are provided. One computer-implemented method for generating a standard reference die for use in a die to standard reference die inspection includes acquiring output of an inspection system for a centrally located die on a wafer and one or more dies located on the wafer. The method also includes combining the output for the centrally located die and the one or more dies based on within die positions of the output. In addition, the method includes generating the standard reference die based on results of the combining step.

DEFECT INSPECTING APPARATUS

A semiconductor wafer (11) is irradiated with a charged particle beam (6) and scanned, secondary charged particles (9) obtained from the semiconductor wafer (11) by having the wafer irradiated with the charged particle beam (6) are detected, a detection image of an inspection area, said detection image having been obtained on the basis of scanning information and detection signals of the secondary charged particles (9), and a detection image of a reference area are compared with each other, and a defect candidate is detected by comparing the difference between the detection images and a threshold value with each other. Defect information, including the positional information of the defect candidate, is generated such that the information includes, the relative positions of predetermined feature points in the repeated patterns formed on the semiconductor wafer (11), with respect to the origins of the coordinate regions set to respective repeated patterns, and a relative position of the defect ...

IMAGE BINARIZING METHOD, IMAGE PROCESSING DEVICE, AND COMPUTER PROGRAM

Provided is a binarizing method for binarizing an original image having taken an electrode pad on a substrate. This method comprises the electrode image processing step of creating a binary image of an electrode by binarizing the original image with a first threshold value, the contact trace area calculating step of calculating a contact trace area containing the portion imagined as the trace, at which an object has contacted with the electrode, from the binary image of the electrode, the contact trace image processing step of creating a contact trace area binary image by binarizing the original image of the area corresponding to the contact trace area, with a second threshold value different from the first threshold value, and the image synthesizing step of synthesizing the binary image of the electrode and the contact trace binary image by taking their logical sum for each corresponding pixel.

SYSTEM AND METHOD FOR INSPECTING A WORKPIECE SURFACE BY ANALYZING SCATTERED IN A FRONT QUARTERSPHERE REGION ABOVE THE WORKPIECE

A surface inspection system, as well as related components and methods, are provided. The surface inspection system includes a beam source subsystem, a beam scanning subsystem, a workpiece movement subsystem, an optical collection and detection subsystem, and a processing subsystem. The optical collection and detection system features, in the front quartersphere, a light channel assembly for collecting light reflected from the surface of the workpiece, and a front collector and wing collectors for collecting light scattered from the surface, to, greatly improve the measurement capabilities of the system. The light channel assembly has a switchable edge exclusion mask and a reflected light detection system for improved detection of the reflected light.

IMAGE PROCESSING DEVICE, DISTORTION CORRECTION MAP CREATION DEVICE, AND SEMICONDUCTOR MEASUREMENT DEVICE

An image processing device comprises: an interpolation process image acquisition means for acquiring an interpolation process image of a prescribed size which includes an interpolation point of an inputted image; a Fourier conversion means for Fourier converting the interpolation process image which is acquired with the interpolation process image acquisition means; a phase change means for changing, on the basis of the shift theorem, such that the interpolation point moves to a desired nearby integer coordinate location, the phase of each value of the post-conversion interpolation process image which is Fourier converted with the Fourier conversion means; an inverse Fourier conversion means for inverse Fourier converting the interpolation process image which is phase changed by the phase change means; and an interpolation value establishment means for setting a value of a pixel which is in the integer coordinate location from the post-conversion interpolation process image which is inverse ...

METHOD FOR MEASURING OVERLAY, MEASURING DEVICE, SCANNING ELECTRON MICROSCOPE, AND GUI

A method for measuring overlay of a semiconductor device on which a circuit pattern is formed using a plurality of exposure steps, wherein the method for measuring overlay is characterized in being provided with an image-capturing step for capturing an image of a plurality of regions of the semiconductor device, a reference-image-setting step for setting a reference image based on a plurality of images captured in the image-capturing step, a difference-quantifying step for quantifying the difference between the reference image set in the reference-image-setting step and the plurality of images captured in the image-capturing step, and an overlay calculation step for calculating overlay on the basis of the difference quantified in the difference-quantifying step.

METHODS AND SYSTEMS FOR DETERMINING A POSITION OF INSPECTION DATA IN DESIGN DATA SPACE

Various methods and systems for determining a position of inspection data in design data space are provided. One computer-implemented method includes determining a centroid of an alignment target formed on a wafer using an image of the alignment target acquired by imaging the wafer. The method also includes aligning the centroid to a centroid of a geometrical shape describing the alignment target. In addition, the method includes assigning a design data space position of the centroid of the alignment target as a position of the centroid of the geometrical shape in the design data space. The method further includes determining a position of inspection data acquired for the wafer in the design data space based on the design data space position of the centroid of the alignment target.

METHOD OF HIGH PASS FILTERING A DATA SET

An improved method of high pass filtering a data set includes flattening the data set and then filtering the flattened data set with an adaptive filter. The data set is flattened by fitting it to a predetermined function, and then obtaining the difference between the original data set and the fitted data set. Beneficially, the predetermined function is a polynomial. The adaptive filter includes a masking function that has a constant, non-zero value (e.g., 1) within the bounds of the original data set and value of zero outside the bounds of the original data set.

METHOD FOR OPTICALLY DETECTING LOCAL DEFECTS IN A PERIODIC STRUCTURE

The invention relates to a method for detecting local defects in a periodic structure using an optical scanning system. Said structure has at least one pattern that is iterative within a period and is detected at least in part by the scanning system. According to the invention, the original value of at least one current segment of a period is compared with at least two original values of corresponding segments of other periods. The median of the analysed original values is determined and used in a representation as the segment value of the periodic structure that corresponds to the actual segment and a differential image is formed from the representation and the original values, or the median of the analysed original values is determined and the differential value between the median and the original value of the current segment is used as the value of the relevant segment in a differential image of the periodic structure, whereby at least the differential image is used to determined the ...

IMAGE PROCESSING METHOD, IMAGE PROCESSING DEVICE, DETECTION METHOD, DETECTION DEVICE, EXPOSURE METHOD AND EXPOSURE SYSTEM

An image is acquired that contains a plurality of areas where two adjacent areas have mutually different image features (steps 111-114). Image features, for example, difference in texture in adjacent areas in the image thus obtained are used to analyze the image (step 115) and determine boundary information between the two adjacent areas (step 116). Shape information and position information in an attentional area in the image are detected based on the obtained boundary information to thereby detect the shape information, position information, optical characteristic information and the like of an object (step 117). As a result, the shape information, position information, optical characteristic information and the like of an object can be detected accurately.

METHOD, APPARATUS AND SYSTEM FOR VERIFICATION OF PATTERNS

A method, apparatus and system for verifying the establishment of a pattern includes means for storing a template of the pattern, means for acquiring an image of the established pattern, a first image processing means to alter at least one of said template and acquired images to produce at least two resultant images, comparison means to compare the two resultant images with the other of said template and acquired image and means to evaluate the results of each comparison to determine if the established pattern includes a defect. Both gray scale and binary processing and comparisons are disclosed for use as required.

APPARATUS AND METHODS FOR PREDICTING WAFER-LEVEL DEFECT PRINTABILITY

Disclosed are methods and apparatus for qualifying a photolithographic reticle. A reticle inspection tool is used to acquire images at different imaging configurations from each of a plurality of pattern areas of a test reticle. A reticle near field for each of the pattern areas of the test reticle is recovered based on the acquired images from each pattern area of the test reticle. A lithography model is applied to the reticle near field for the test reticle to simulate a plurality of test wafer images, and the simulated test wafer images are analyzed to determine whether the test reticle will likely result in an unstable or defective wafer.

IMAGE PROCESSING METHOD AND PROCESS SIMULATION APPARATUS

An image processing method includes the steps of detecting edge information from an input image, identifying a plurality of lines from the edge information, dividing the input image into a plurality of areas based on the relative locations of the plurality of identified lines, calculating a similarity between adjacent areas of the plurality of divided areas, detecting boundaries between the adjacent areas as line segments partitioning the adjacent areas based on a degree of dissimilarity of the adjacent areas, wherein each of the line segments is at least a portion of the plurality of lines, and connecting the line segments forming the boundaries, and generating a connected shape using the boundaries.

High Accuracy Beam Placement for Local Area Navigation

An improved method of high accuracy beam placement for local area navigation in the field of semiconductor chip manufacturing. Preferred embodiments of the present invention can also be used to rapidly navigate to one single bit cell in a memory array or similar structure, for example to characterize or correct a defect in that individual bit cell. High-resolution scanning is used to scan only a strip of cells on the one edge of the array (along either the X axis and the Y axis) to locate a row containing the desired cell followed by a similar high-speed scan along the located row (in the remaining direction) until the desired cell location is reached. This allows pattern-recognition tools to be used to automatically count the cells necessary to navigate to the desired cell, without the large expenditure of time required to image the entire array.

Method and system for fast inspecting defects

A method and system for inspecting defects saves scanned raw data as an original image so as to save time for repeated scanning and achieve faster defect inspection and lower false rate by reviewing suspicious defects and other regions of interest in the original image by using the same or different image-processing algorithm with the same or different parameters.

METHODS AND SYSTEMS FOR INSPECTION OF WAFERS AND RETICLES USING DESIGNER INTENT DATA

Methods and systems for inspection of wafers and reticles using designer intent data are provided. One computer-implemented method includes identifying nuisance defects on a wafer based on inspection data produced by inspection of a reticle, which is used to form a pattern on the wafer prior to inspection of the wafer. Another computer-implemented method includes detecting defects on a wafer by analyzing data generated by inspection of the wafer in combination with data representative of a reticle, which includes designations identifying different types of portions of the reticle. An additional computer-implemented method includes determining a property of a manufacturing process used to process a wafer based on defects that alter a characteristic of a device formed on the wafer. Further computer-implemented methods include altering or simulating one or more characteristics of a design of an integrated circuit based on data generated by inspection of a wafer.

Pattern inspection apparatus and method

A pattern inspection apparatus is used for inspecting a fine pattern, such as a semiconductor integrated circuit (LSI), a liquid crystal panel, and a photomask (reticle) for the semiconductor or the liquid crystal panel, which are fabricated based on data for fabricating the fine pattern such as design data. The pattern inspection apparatus includes a reference pattern generation device configured to generate a reference pattern represented by one or more lines, comprising one of a line segment and a curve, from the data, an image generation device configured to generate the image of the pattern to-be-inspected, a detecting device configured to detect an edge of the image of the pattern to-be-inspected, and an inspection device configured to inspect the pattern to-be-inspected by comparing the edge of the image of the pattern to-be-inspected with the one or more lines of the reference pattern.

Method and system for inspecting a wafer

A method for inspecting a wafer includes acquiring, prior to an application of a layer onto the wafer, a first optical image of a region of the wafer surface to be inspected. After at least partial removal of the layer, a second optical image is acquired. The region of the wafer surface is inspected by comparing the first and the second images.

Method for detecting defects

A method for inspecting a substrate for defects, including: (a) obtaining an inspected pixel and a reference pixel; (b) calculating an inspected value and a reference value, the inspected value representative of the inspected pixel and the reference value representative of the reference pixel; (c) selecting a threshold in response to a selected value out of the inspected value and the reference value; and (d) determining a relationship between the selected threshold, the reference value and the inspected value to indicate a presence of a defect.

Appearance inspection apparatus and method

An appearance inspection apparatus comprises an inspection part for detecting a defect of a pattern on the basis of an image of a surface of a substrate on which the pattern is formed, which is captured by an imaging part. The inspection part comprises an image transfer part for transferring image data which is obtained by imaging a region to be inspected on the substrate and stored in an image storing memory by the imaging part to a plurality of image processing memories and a plurality of GPUs for taking image data corresponding to respective regions to be processed out of transferred image data which are transferred to the image processing memories by the image transfer part and performing an inspection process for defect detection on the image data. The inspection part further comprises an image processing control part for acquiring inspection tasks each prescribing inspection details from an inspection task holding part and controlling the plurality of GPUs in accordance with the inspection ...

METHOD OF INSPECTING A SEMICONDUCTOR DEVICE AND AN APPARATUS THEREOF

A method and apparatus of inspecting a sample, in which the sample is inspected under a plurality of inspection conditions, and inspection data obtained by inspecting the sample under each of the plurality of inspection conditions and position information on the sample of the inspection date in correspondence with the respective inspection conditions, are stored. The inspection data for each of the plurality of inspection conditions is against each other by the use of the position information on the sample to determine a position to be inspected in detail, and an image of the sample at a position to be inspected in detail is obtained. The obtained image is classified, the inspection condition of the sample by the use of information of classification of the image is determined.

Image inspection method

An image inspection method includes capturing a target object image, which the target object image comprises a plurality of graphical features; choosing a block image comprising a specific graphical feature of the plurality of graphical features from the target object image; capturing all the graphical features of the block image to obtain a region of interest (ROI); executing a filtering process or a recovering process on the ROI to obtain a pre-processed region; and inspecting, according to the pre-processed region, the target object image to determine whether the target object image has defects.

HIDDEN DEFECT DETECTION AND EPE ESTIMATION BASED ON THE EXTRACTED 3D INFORMATION FROM E-BEAM IMAGES

A method for determining the existence of a defect in a printed pattern may include obtaining a) a captured image of a printed pattern from an image capture device, and b) a simulated image of the printed pattern generated by a process model. The method may include generating a combined image as a weighted combination of portions of the captured image and the simulated image. The method may include determining whether a defect exists in the printed pattern based on the combined image.

Double inspection of reticle or wafer

During mask or reticle inspection, each region is scanned at least twice, using an overlap between each pair of consecutive frames. System contamination and camera blemishes have approximately constant frame coordinates, while mask defects have constant reticle coordinates, but inconstant scan frame coordinates. True defects are detected at different coordinates in consecutive frames with a known displacement therebetween.

Defect inspection apparatus, defect inspection method and program

A reference image and an inspection image indicating pattern on a substrate are acquired and a specified pixel value range (63) is set on the basis of a histogram (62a) of pixel values of the reference image. Then, a transfer curve (71) having a large inclination in the specified pixel value range (63) is obtained. The inspection image and the reference image are converted in accordance with an LUT having transfer characteristics indicated by the transfer curve (71), an enhanced differential image between a converted inspection image and a converted reference image is generated and each pixel value of the enhanced differential image is compared with a predetermined threshold value, to thereby perform a detection of defective pixel. With this, a value of pixel in the enhanced differential image which corresponds to a pixel in the reference image (or inspection image) having the pixel value in the specified pixel value range (63) is enhanced, and appropriate inspection is thereby performed ...

Single tool defect classification solution

Methods and apparatus for efficiently analyzing defects in-line on a wafer by wafer basis are provided. In general terms, embodiments of the present invention provide a simple interface for setting up the entire inspection and defect analysis process in a single set up procedure. In one embodiment, an apparatus for analyzing defects on specimens is disclosed. The apparatus includes an inspection station for inspecting a specimen for potential defects and a review station for analyzing a sample of the potential defects to determine a classification of such potential defects. The apparatus further includes a computer system having an application interface operable to allow a user to set up the inspection station and the review station during a same setup phase so as to allow the inspection station and the review station to then operate automatically to provide defect information for one or more specimens based on the user set up. Techniques for using such apparatus are also disclosed.

Charged particle beam apparatus

It is an object of the present invention to obtain an image which is focused on all portions of a sample and to provide a charged particle beam apparatus capable of obtaining a two-dimensional image which has no blurred part over an entire sample. In order to achieve the above object, the present invention comprises means for changing a focus of a charged particle beam emitted from a charged particle source, a charged particle detector for detecting charged particles obtained at a portion of said sample irradiated with the charged particle beam, and means for composing a two-dimensional image of the sample as viewed from a direction of said charged particle beam source, based on signals on which said charged particle beam is focused, said signals being among signals output from the charged particle detector.

Method and apparatus for reviewing defects

In apparatuses for automatically acquiring and also for automatically classifying images of defects present on a sample such as a semiconductor wafer, a classifying system is provided which are capable of readily accepting even such a case that a large number of classification classes are produced based upon a request issued by a user, and also even such a case that a basis of the classification class is changed in a high frequency. When the user defines the classification classes, a device for designating attributes owned by the respective classification classes is provided. The classifying system automatically changes a connecting mode between an internally-provided rule-based classifier and an example-based classifier, so that such a classifying system which is fitted to the classification basis of the user is automatically constructed.

Micropattern measuring method, micropattern measuring apparatus, and computer-readable recording medium on which a micropattern measuring program is recorded

A micropattern measuring method disclosed herein comprises acquiring an image of a micropattern including plural layers; extracting a rough outline of the micropattern in the image as a sequence of points including plural points; dividing the plural points composing the sequence of points into groups; making each of the groups as each of patterns belong to any of the plural layers; and acquiring edge coordinates of a pattern to be measured from the patterns which are made to belong to the respective layers.

Method and apparatus for reviewing defects

The invention provides an apparatus and a method each capable of highly accurately reviewing at a high speed very small foreign matters and pattern defects occurring during a device production process for forming a circuit pattern on a substrate of semiconductor devices, etc. An objective lens having high NA is installed inside a vacuum chamber for an inspection object having a transparent film formed on the surface thereof and an illumination optical path is formed inside the objective lens so that dark visual field illumination can be made and reflected and scattered light of foreign matters or defects on the surface of the inspection object can be detected with high sensitivity.

Specific part searching method and device for memory LSI

An object of the present invention is to provide a device for and a method of searching a really defective cell by removing influence of poor accuracy of a stage shifting mechanism or a numerical operation error of the device. The method of the present invention is a method of searching a specific cell of memory LSI, said method being employed in performing analysis, processing and observation operation with reference to a part of a physical address which corresponds to a logical address outputted as a result of an electrical test performed on memory LSI of array structure in which a plurality of memory cells are repeatedly arranged. Further, position coordinates are continuously observed with reference to an area including the end point of the array structure of said memory cell, the memory cells and a part between the memory cells; the number of memory cells on memory cell LSI is counted according to changes in brightness or luminosity; and a part in which said counted value and the value ...

Wafer map analysis aid system, wafer map analyzing method and wafer processing method

In order to solve various problems of a wafer, two-dimensional analysis using a wafer map is aided. An image of the wafer map is classified and displayed on a screen for each item such as a manufacturing step, a device and inspection. A trend chart is also attached in addition to the image of the wafer map.

Data handling system for pattern inspector or writer

A laser pattern inspection and/or writing system which writes or inspects a pattern on a target on a stage, by raster scanning the target pixels. Inspection can also be done by substage illumination with non-laser light. A database, organized into frames and strips, represents an ideal pattern as one or more polygons. Each polygon's data description is contained within a single data frame. The database is transformed into a turnpoint polygon representation, then a left and right vector representation, then an addressed pixel representation, then a bit-mapped representation of the entire target. Most of the transformations are carried out in parallel pipelines. Guardbands around polygon sides are used for error filtering during inspection. Guardbands are polygons, and frames containing only guardband information are sent down dedicated pipelines. Error filtering also is done at the time of pixel comparisons of ideal with real patterns, and subsequently during defect are a consolidation.

Correction of overlay offset between inspection layers

A method for determining the offset between at least three origins of a coordinate system used for at least three different defect inspection spaces. The method comprises: collecting multiple sets of data spanning defect inspection spaces; filtering the data sets to remove points that introduce noise into correlation calculations; determining whether different data sets show correlation; selecting pairs of data sets showing correlation greater than or equal to a metric; and calculating coordinate offsets of the at least three origins based on the said selected pairs of said data sets. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understand that it will not be used to interpret or limit the scope or meaning of the claims. 37 CFR 1.72(b).

Methods and systems to classify features in electronic designs

Methods for matching features in patterns for electronic designs include inputting a set of pattern data for semiconductor or flat panel displays, where the set of pattern data comprises a plurality of features. Each feature in the plurality of features is classified, where the classifying is based on a geometrical context defined by shapes in a region. The classifying uses machine learning techniques.

Automated wafer defect inspection system and a process of performing such inspection

An automated defect inspection system has been invented and is used on patterned wafers, whole wafers, broken wafers, partial wafers, sawn wafers such as on film frames, JEDEC trays, Auer boats, die in gel or waffle packs, MCMs, etc., and is specifically intended and designed for second optical wafer inspection for such defects as metalization defects (such as scratches, voids, corrosion, and bridging), diffusion defects, passivation layer defects, scribing defects, glassivation defects, chips and cracks from sawing, solder bump defects, and bond pad area defects.

Lock in thermal laser stimulation through one side of the device while acquiring lock-in thermal emission images on the opposite side

Controlled amount of heat is injected into a stacked die using a light beam, and the propagated heat is measuring with LIT camera from the other side of the die. The thermal image obtained can be characterized so that it can be used to calibrate the phase shift from a given stack layer, or can be used to identify defects in the stacked die. The process can be repeated for each die in the stack to generate a reference for future testing. The thermal image can be investigated to detect faults, such as voids in vias, e.g., TSV.

Defect image processing apparatus, defect image processing method, semiconductor defect classifying apparatus, and semiconductor defect classifying method

A defect image processing apparatus uses a normalized cross correlation to image-match a layout image ( 52 ) acquired from a design data with an image acquired by removing, from a defect image ( 53 ), the defect area portions thereof, and displays, as a result of that matching, a layout image and defect image ( 54 ) on the display device. In the displayed layout image & defect image ( 54 ), not only the layout image, the layer of which is the same as that of the defect image ( 53 ), but also a layout image of another layer is displayed superimposed on the defect image ( 53 ). This makes it easier to analyze the factor of a systematic defect having occurred due to a positional relationship with another layer.

Method of detecting defect in pattern and apparatus for performing the same

A method and apparatus for detecting a defect in a pattern are provided. The method includes: obtaining a pattern image from a pattern in a region of interest on a semiconductor substrate and obtaining a reference image are obtained; matching the obtained pattern image and the obtained reference image to select a pixel group including pixels indicating defect information of the pattern image; adjusting a defect detection threshold of the selected pixel group; comparing the obtained pattern image and the obtained reference image to detect a pattern defect in a detection region corresponding to the selected pixel group of the pattern image, according to the adjusted defect detection threshold.

Defects inspecting apparatus and defects inspecting method

An inspecting apparatus and method including first and second illuminating units for illuminating a surface of a specimen to be inspected with different incident angles and first and second detecting optical units arranged at different elevation angle directions to the surface of the specimen for detecting images of the specimen illuminated by the first and second illuminating units.

Method of Extracting Contour Lines of Image Data Obtained By Means of Charged Particle Beam Device, and Contour Line Extraction Device

The present invention is intended to provide a contour extraction method and a contour extraction device with an objective of either suppression of unnecessary contouring processings or selective contouring of necessary portions. To attain the objective, provided are a contour extraction method, and a device, with which contours of pattern edges on an image formed based on charged particles emitted from a sample are extracted and, when contouring of a pattern located in an overlapping region provided in connecting images of plural image-capturing regions to form a synthesized image is performed, either areas of the pattern in the plurality of image-capturing regions, or a pre-set measurement portion is found, and selective contour extraction of the pattern with respect to an image of an image-capturing region is carried out either on a side where the area is large, or on a side where a measurement portion regarding the pattern is located.

Method and apparatus for reviewing defects

Disclosed is a method for reviewing defects in a large number of samples within a short period of time through the use of a defect review apparatus. To collect defect images steadily and at high throughput, a defect detection method is selected before imaging and set up for each of review target defects in the samples in accordance with the external characteristics of the samples that are calculated from the design information about the samples. The defect images are collected after an imaging sequence is set up for the defect images and reference images in such a manner as to reduce the time required for stage movement in accordance with the defect coordinates of the samples and the selected defect detection method.

Template matching processing device and template matching processing program

The present invention is a template matching processing device capable of evaluating a similarity degree which supports even a case of intensive morphological change between a design image and a photographic image. In the template matching processing device, matching processing between the design image and the photographic image is performed, a partial design image is obtained by clipping a portion having the highest correlation (step 101 ), and processing for deforming the photographic image in accordance with the clipped design image (steps 102 to 105 ) is performed, so that correlation between the deformed image obtained and the design image is taken to be set as the similarity degree.

Method for creating template for patternmatching, and image processing apparatus

Disclosed is a method for creating a template for the purpose of performing pattern matching on the basis of a template image having high contrast. Also disclosed is an image processing apparatus. In the method for creating the template, design data is partially extracted, and on the basis of the extracted partial region, the template for template matching is created. In the image processing apparatus, such method is performed. In the method and the apparatus, a density of edges that belong to a predetermined region in the design data equivalent to the region to be searched for in the template matching is obtained.

Air Pocket Detection Methods and Systems

Methods and systems for use in detecting an air pocket in a single crystal material are described. One example method includes providing a matrix including a plurality of data units, the plurality of data units including image data related to a region of interest of the single crystal material; determining, by a processor, a difference between data units of the matrix and a corresponding data unit of the matrix, wherein the corresponding data unit is defined by a first operation of the matrix; calculating, by the processor, a first index value based on the differences of the corresponding data units; and identifying an air pocket within the single crystal material based on the first index value and a predetermined threshold.

System and method for alignment in semiconductor device fabrication

A method of determining overlay error in semiconductor device fabrication includes receiving an image of an overlay mark formed on a substrate. The received image is separated into a first image and a second image, where the first image includes representations of features formed on a first layer of the substrate and the second image includes representations of the features formed on a second layer of the substrate. A quality indicator is determined for the first image and a quality indicator is determined for the second image. In an embodiment, the quality indicators include asymmetry indexes

Defect inspection method and defect inspection device

There is provided a defect inspection method including the steps of: acquiring image data sets of a sample under a plurality of imaging conditions; storing a plurality of image data sets acquired under the plurality of imaging conditions in an image storage unit; acquiring a defect candidate from each of the plurality of image data sets; cutting out, from the image data sets acquired under at least two imaging conditions and stored in the image storage unit, a partial images each including a position of the defect candidate detected in any of the plurality of image data sets and the periphery of the defect candidate position; and integrating the partial images acquired under at least two imaging conditions corresponding to the defect candidates, thereby classifying the defect candidates.

Method and apparatus for inspecting patterns formed on a substrate

The pattern inspection apparatus of the present invention performs comparison between images of regions corresponding to patterns formed to be same patterns, thereby determining mismatch portions across the images to be defects. The apparatus includes multiple sensors that synchronously acquire images of shiftable multiple detection systems different from one another, and an image comparator section corresponding thereto. In addition, the apparatus includes a means for detecting a statistical offset value from the feature amount to be a defect, thereby properly detecting the defect even when a brightness difference is occurring in association with film a thickness difference in a wafer.

Pattern measuring apparatus, pattern measuring method, and computer-readable recording medium on which a pattern measuring program is recorded

There is provided a technique to correctly select and measure a pattern to be measured even when contours of the pattern are close to each other in a sample including a plurality of patterns on a substantially same plane. A pattern measuring apparatus that scans a sample with charged particles, forms a detected image by detecting secondary charged particles or backscattered charged particles generated from the sample, and measures a pattern imaged on the detected image includes: an image acquiring section acquiring a plurality of detected images taken at a substantially same location on the sample under different imaging conditions; a contour extracting section extracting a plurality of pattern contours from the plurality of detected images; a contour reconstructing section reconstructing a contour to be measured by combining the plurality of pattern contours; and a contour measuring section making a measurement using the reconstructed contour to be measured.

Apparatus and method for defect detection including patch-to-patch comparisons

A system receives, based on processing of an inspected frame of an inspected image generated by collecting signals indicative of a pattern on an article, at least one candidate defect location in the inspected frame. The system defines a candidate patch within the inspected frame. The candidate patch is associated with the candidate defect location. The system identifies at least one similar patch in the inspected frame using a predefined similarity criterion and determines whether a defect exists at the candidate defect location based on a comparison of at least a portion of the candidate patch with at least a corresponding portion of the at least one similar patch.

Semiconductor circuit pattern measuring apparatus and method

Included is a multiple resolution image generating unit which applies a plurality of noise removing filters to a semiconductor circuit pattern image and generates a multiple resolution image, a multiple resolution differential image generating unit which generates a multiple resolution differential image from a difference of images between hierarchies of the multiple resolution image, and a contour extracting unit which extracts a contour of the semiconductor circuit pattern based on an intensity signal of the semiconductor circuit pattern image. The contour extracting unit calculates an intensity signal level upon extracting a contour of the semiconductor circuit pattern from the multiple resolution image by using an image signal of the multiple resolution differential image, and extracts a contour of the semiconductor circuit pattern based on the calculated intensity signal level.

Automated Inspection Scenario Generation

Methods and systems for determining inspection scenarios without input from a user are presented. Inspection scenarios include at least one acquisition mode, defect detection parameter values, and classification parameter values. In one example, a number of defect events are determined by a hot inspection of a wafer surface. The defect events are classified and attributes associated with each defect event are identified. The defect events are labeled with this information. Based on the identified attributes and classification, inspection scenarios are determined. The inspection scenarios are solutions in a mathematical space formed by the identified attributes. In some examples, a plurality of inspection scenarios are determined and a desired inspection scenario is selected from the plurality based on the number of defects of interest and the number of nuisance events captured by the selected inspection scenario.

TDI Imaging System With Variable Voltage Readout Clock Signals

A Time Delay and Integration (TDI) imaging system utilizing variable voltage readout clock signals having progressively increasing amplitudes defined as a function of pixel row location, where pixel rows positioned to receive/collect/transfer image-related charges at the start of the TDI imaging process are controlled using lower amplitude readout clock signals than pixel rows positioned to receive/collect/transfer image-related charges near the end of the TDI process. The clock signal amplitude for each pixel row is determined by the expected maximum amplitude needed to hold and transfer image charges by the pixels of that row. Multiple (e.g., three) primary phase signals are generated that are passed through splitters to provide multiple identical secondary phase signals, and then drivers having gain control circuitry are utilized to produce voltage readout clock signals having the same phases as the primary phase signals, but having two or more different voltage amplitudes. 1. A Time Delay and Integration (TDI) imaging system , comprising:a sensor including an array of pixels arranged in a plurality of rows and a plurality of columns,phase signal generating means for generating a plurality of primary phase signals;means for splitting each of said plurality of primary phase signals into a plurality of secondary phase signals such that a first said primary phase signal is split into a plurality of identical first secondary phase signals, and a second said primary phase signal is split into a plurality of second secondary phase signals;a plurality of drivers for generating a plurality of readout clock signals in accordance with said plurality of secondary phase signals, said plurality of drivers being coupled to said sensor such that each row of said pixels receives at least two readout clock signals respectively generated by associated said drivers in accordance with associated secondary phase signals; andgain control means for controlling the plurality of drivers ...

INTERFEROMETRIC ROLL-OFF MEASUREMENT USING A STATIC FRINGE PATTERN

An apparatus for measuring the surface contour of a target area of a substrate has a light source to emit a measurement light beam. A beam splitting element defines a measurement axis and a reference axis. A substrate holder disposes the target area along the measurement axis and tilted away from normal incidence, about a tilt axis that orthogonally intersects the measurement axis, according to a predetermined tilt angle that is a function of the measurement light beam wavelength. An imaging sensor records a fringe pattern generated from the measurement light beam and a reference light beam. A computer extracts frequency profiles from the recorded fringe pattern, each profile taken in a direction that is orthogonal to the direction of the tilt axis, wherein the programmed instructions further compute changes in the contour of the target area surface according to the frequency profiles. 1. An apparatus for measuring the surface contour of a target area of a substrate , the apparatus comprising:a light source energizable to emit a measurement light beam;a beam splitting element that defines a measurement axis and a reference axis;a substrate holder that disposes the target area of the substrate along the measurement axis and tilted away from normal incidence, about a tilt axis that orthogonally intersects the measurement axis, according to a predetermined tilt angle that is a function of the measurement light beam wavelength;an imaging sensor energizable to record a fringe pattern for the target area, the fringe pattern generated from the measurement light beam and a reference light beam from the reference axis; anda computer in signal communication with the imaging sensor and programmed with instructions to extract a plurality of frequency profiles from the recorded fringe pattern, each profile taken in a direction that is substantially orthogonal to the direction of the tilt axis, wherein the programmed instructions further compute changes in the contour of the ...

Block-to-Block Reticle Inspection

Block-to-block reticle inspection includes acquiring a swath image of a portion of a reticle with a reticle inspection sub-system, identifying a first occurrence of a block in the swatch image and at least a second occurrence of the block in the swath image substantially similar to the first occurrence of the block and determining at least one of a location, one or more geometrical characteristics of the block and a spatial offset between the first occurrence of the block and the at least a second occurrence of the block. 1. A method for design database assisted block-to-block reticle inspection comprising:identifying a set of repeating blocks of a reticle within a design database of the reticle;determining one or more spatial characteristics associated with the set of repeating blocks of the reticle;storing the one or more spatial characteristics associated with the set of repeating blocks of the reticleacquiring an image of a portion of the reticle with a reticle inspection sub-system;identifying a first portion of the acquired image corresponding with a first member of the set of repeating blocks according to the stored spatial characteristics associated with the set of repeating blocks;identifying a second portion of the acquired image that corresponds to a second member of the set of repeating blocks according to the stored spatial characteristics associated with the set of repeating blocks;aligning the first portion of the acquired image and the second portion of the acquired image;generating a difference of image by performing a subtraction routine on the first portion of the acquired image and the second portion of the acquired image; andidentifying one or more defects on the reticle with the generated difference image.2. The method of claim 1 , wherein the generating a difference of image by performing a subtraction routine on the first portion of the acquired image and the second portion of the acquired image comprises:determining a difference in intensity ...

METHOD FOR MANUFACTURING REFLECTIVE MASK BLANK, AND METHOD FOR MANUFACTURING REFLECTIVE MASK

A method of manufacturing a reflective mask blank comprising a multilayer reflective film formed on a substrate so as to reflect EUV light; and a laminated film formed on the multilayer reflective film. The method includes the steps of depositing the multilayer reflective film on the substrate to form a multilayer reflective film formed substrate; carrying out defect inspection for the multilayer reflective film formed substrate; depositing the laminated film on the multilayer reflective film of the multilayer reflective film formed substrate; forming a fiducial mark for an upper portion of the laminated film to thereby form a reflective mask blank comprising the fiducial mark, the fiducial mark serving as a reference for a defect position in defect information; and carrying out defect inspection of the reflective mask blank by using the fiducial mark as a reference. 1. A method of manufacturing a reflective mask blank comprising a multilayer reflective film formed on a substrate so as to reflect EUV light; and a laminated film formed on the multilayer reflective film;the method comprising the steps of:depositing the multilayer reflective film on the substrate to form a multilayer reflective film formed substrate;carrying out defect inspection for the multilayer reflective film formed substrate;depositing the laminated film on the multilayer reflective film of the multilayer reflective film formed substrate;forming a fiducial mark for an upper portion of the laminated film to thereby form a reflective mask blank comprising the fiducial mark, the fiducial mark serving as a reference for a defect position in defect information; andcarrying out defect inspection of the reflective mask blank by using the fiducial mark as a reference.2. A method of manufacturing a reflective mask blank comprising a multilayer reflective film formed on a substrate so as to reflect EUV light; and an absorber film formed on the multilayer reflective film so as to absorb the EUV light;the ...

INSPECTION TOOL AND INSPECTION METHOD

Apparatuses, systems, and methods for inspecting a semiconductor sample are disclosed. In some embodiments, the sample may comprise a structure having a plurality of openings in a top layer of the structure. In some embodiments, the method may comprise generating an image of the structure using a SEM; inspecting an opening of the plurality of openings by determining a dimension of the opening based on the image and determining an open-state of the opening, based on a contrast of the image; and determining a quality of the opening based on both the determined dimension and the determined open-state of the opening. 1. A method of inspecting a semiconductor sample , the sample comprising a structure having a plurality of openings in a top layer of the structure , the method comprising:generating an image of the structure using a SEM; determining a dimension of the opening or the plurality of openings based on the image; and', 'determining an open-state of the opening or the plurality of openings, based on a contrast of the image; and, 'inspecting an opening or the plurality of openings bydetermining a quality of the opening or the plurality of openings based on both the determined dimension and the determined open-state.2. The method according to claim 1 , wherein the contrast comprises a difference in intensity observed inside the opening and outside the opening claim 1 , on the image.3. The method according to claim 1 , wherein the dimension of the opening comprises a diameter of the opening and determining the diameter of the opening comprises applying an ellipse fitting algorithm to the image.4. The method according to claim 1 , wherein the dimension of the opening comprises a diameter of the opening and wherein the diameter of the opening is determined based on an intensity distribution along a line across the image claim 1 , the line crossing the opening on the image.5. The method according to claim 1 , wherein determining an open-state of the opening comprises ...

METHOD AND APPARATUS FOR ANALYZING A DEFECTIVE LOCATION OF A PHOTOLITHOGRAPHIC MASK

The present invention relates to a method for analyzing at least one defective location of a photolithographic mask, having the following steps: (a) obtaining measurement data for the at least one defective location of the photolithographic mask; (b) determining reference data of the defective location from computer-aided design (CAD) data for the photolithographic mask; (c) correcting the reference data with at least one location-dependent correction value; and (d) analyzing the defective location by comparing the measurement data to the corrected reference data. 1. A method for analyzing at least one defective location of a photolithographic mask , wherein the method comprises the following steps:a. obtaining measurement data for the at least one defective location of the photolithographic mask;b. determining reference data of the defective location from computer-aided design (CAD) data for the photolithographic mask;c. correcting the reference data with at least one location-dependent correction value; andd. analyzing the defective location by comparing the measurement data to the corrected reference data.2. The method for analyzing at least one defective location of a photolithographic mask , wherein the method comprises the following steps:a. obtaining measurement data for the at least one defective location of the photolithographic mask;b. determining reference data of the defective location from computer-aided design (CAD) data for the photolithographic mask;c. determining a contour of the at least one defective location from the measurement data and the reference data; andd. analyzing the defective location by correcting the contour of the at least one defective location with at least one location-dependent correction value.3. The method of claim 1 , wherein obtaining measurement data for the at least one defective location of the photolithographic mask comprises: scanning the at least one defective location with a particle beam.4. The method of claim 1 , ...

APPARATUS AND METHOD FOR HIGHLY ACCURATE REAL-TIME PHOTOELECTRIC GLASS SUBSTRATE IDENTIFICATION

The present invention provides an apparatus for highly accurate and real-time photoelectric glass substrate identification. The apparatus includes: a laser device for emitting a laser beam; a glass substrate that has a first surface and a second surface and is configured to receive the laser beam to generate a first laser beam point and a second laser beam point; and, a charged coupled device (CCD) camera inspecting equipment. The first laser beam point has a first point area, and the second laser beam point has a second point area. Once the first point area is moved for a glass distance number and is aligned with the second point area, the CCD camera inspecting equipment can obtain a thickness value of the glass substrate with a resolution value and the glass distance number. In addition, the present invention also provides a method for highly accurate and real-time photoelectric glass substrate identification. 1. An apparatus for highly accurate real-time photoelectric glass substrate identification , comprising:a laser device configured to emit a laser beam;a glass substrate having a first surface and a second surface and configured to receive the laser beam, wherein a first laser beam point is generated on the first surface, a second laser beam point is generated on the second surface, the laser beam generates a first reflecting light beam at the first laser beam point, and the laser beam generates a second reflecting light beam at the second laser beam point; anda charged coupled device (CCD) camera inspecting equipment configured to receive the first reflecting light beam and the second reflecting light beam;wherein the first laser beam point has a first point area, the second laser beam point has a second point area, and the CCD camera inspecting equipment determines whether a position of the first point area and a position of the second point area are aligned with each other with the first reflecting light beam and the second reflecting light beam; if the ...

Pattern-Measuring Apparatus and Semiconductor-Measuring System

An object of the present invention is to provide a pattern-measuring apparatus and a semiconductor-measuring system which are able to obtain an evaluation result for suitably selecting processing with respect to a semiconductor device. In the present invention for attaining the object described above, there is proposed a pattern-measuring apparatus including an arithmetic device which compares a circuit pattern of an electronic device with a reference pattern, in which the arithmetic device classifies the circuit pattern in processing unit of the circuit pattern on the basis of a comparison of a measurement result between the circuit pattern and the reference pattern with at least two threshold values. 1. A pattern-measuring apparatus comprising an arithmetic device which compares a circuit pattern of an electronic device with a reference pattern ,wherein the arithmetic device classifies the circuit pattern in processing unit of the circuit pattern on the basis of a comparison of a measurement result between the circuit pattern and the reference pattern with at least two threshold values.2. The pattern-measuring apparatus according to claim 1 ,wherein the arithmetic device classifies whether the circuit pattern is a target for correcting layout data of the circuit pattern or a mask, or a target for monitoring by a measuring apparatus.3. The pattern-measuring apparatus according to claim 1 ,wherein the arithmetic device classifies a measurement target pattern of a layer which is a measurement target according to determination of whether or not a pattern of the other layer which is connected to the measurement target pattern exists.4. The pattern-measuring apparatus according to claim 1 ,wherein the arithmetic device classifies a measurement portion of the circuit pattern on the basis of relationship information of a measurement result between the circuit pattern and the reference pattern, and the other layer of the measurement portion of the circuit pattern.5. A ...

DETECTION APPARATUS, LITHOGRAPHY APPARATUS, METHOD OF MANUFACTURING ARTICLE, AND DETECTION METHOD

The present invention provides a detection apparatus which detects a position of a mark on a substrate, the apparatus comprising an image capturing unit having an image sensor configured to capture an image of the mark, and a processor configured to control the image capturing unit such that second image capturing is performed after first image capturing is performed, and determine the position of the mark based on an image obtained by the second image capturing, wherein the processor controls the first image capturing such that an accumulation period of charges in the image sensor becomes shorter than that in the second image capturing, and determines an image capturing condition of the second image capturing based on an output of the image sensor in the first image capturing. 1. A detection apparatus which detects a position , of a mark on a substrate , the apparatus comprising:an image capturing unit having an image sensor configured to capture an image of the mark; anda processor configured to control the image capturing unit such that second image capturing is performed after first image capturing is performed, and determine the position of the mark based on an image obtained by the second image capturing,wherein the processor controls the first image capturing such that an accumulation period of charges in the image sensor becomes shorter than that in the second image capturing, and determines an image capturing condition of the second image capturing based on an output of the image sensor in the first image capturing.2. The apparatus according to claim 1 , whereinthe substrate is held, by a movable stage, andthe processor controls the image capturing unit such that the first image capturing is started at a timing when the stage moves to a target position and a vibration of the stage falls within a first allowable range, and then the second image capturing is started at a timing when the vibration of the stage falls within a second allowable range narrower ...

METHOD AND DEVICE FOR INSPECTION OF A SEMICONDUCTOR DEVICE

A method for inspection of a semiconductor device is disclosed. In one aspect, the method includes performing a processing step in manufacturing of the semiconductor device, wherein a compound is at least in contact with the semiconductor device. The method also includes capturing an image on a two-dimensional image sensor of an area of at least part of the semiconductor device, wherein the captured image comprises spectral information for a plurality of positions in the area, and wherein the spectral information comprises intensity of incident electro-magnetic radiation for a plurality of different wavelength bands across a spectrum of wavelengths. The method also includes processing the spectral information of the captured image for each of the plurality of positions to determine whether residue of the compound is present in the position. The method also includes outputting information indicating positions for which residue of the compound is present for controlling a subsequent processing step in manufacturing of the semiconductor device. 1. A method for inspection of a semiconductor device in manufacturing of the semiconductor device , the method comprising:performing a processing step in manufacturing of the semiconductor device, wherein a compound is at least in contact with the semiconductor device;capturing an image on a two-dimensional image sensor of an area of at least part of the semiconductor device, wherein the captured image comprises spectral information for a plurality of positions in the area, wherein the spectral information comprises intensity of incident electro-magnetic radiation for a plurality of different wavelength bands across a spectrum of wavelengths;processing the spectral information of the captured image for each of the plurality of positions to determine whether residue of the compound is present in the position; andoutputting information indicating positions for which residue of the compound is present for controlling a subsequent ...

METHODS AND SYSTEMS FOR EXPEDITING MULTI-PERSPECTIVE WAFER ANALYSIS

Disclosed herein is method for multi-perspective-based wafer analysis. The method includes (i) scanning a plurality of pages, or portions thereof, one after the other, wherein each page, or a portion thereof, is successively scanned, in each of a multiplicity of perspectives, and (ii) analyzing scan data of a last scanned page while scanning a next page from the plurality of pages. At least some of the pages include multiple slices of the wafer. The analysis of the scan data includes identifying defects in the scanned pages, based on an integrated analysis combining scan data from each of the multiplicity of perspectives. Further disclosed is a computerized system configured to implement the method. 2. The method of claim 1 , further comprising claim 1 , upon completion of the analysis of the scan data of each page from the plurality of pages claim 1 , storing the analysis results of the scan data of the page and discarding the scan data of the page.3. The method of claim 1 , wherein the multiplicity of perspectives comprises two or more of at least one illumination spectrum claim 1 , at least one collection spectrum claim 1 , at least one illumination polarization claim 1 , at least one collection polarization claim 1 , an incidence angle(s) claim 1 , a collection angle(s) claim 1 , an amplitude of collected light claim 1 , a phase of collected light claim 1 , Fourier filtering of diffusely reflected light claim 1 , and one or more foci of the illuminating light beam.4. The method of claim 1 , wherein the analysis of the scan data comprises for each of a plurality of scanned areas in each scanned page claim 1 , and for each of a plurality of sub-areas of the scanned area:computing a respective first set of sub-area values based on corresponding scan data in each of the multiplicity of perspectives;computing a respective reference set of sub-area values based on corresponding reference scan data in each of the multiplicity of perspectives;generating a respective set ...

MISALIGNMENT MEASURING APPARATUS AND MISALIGNMENT MEASURING METHOD

According to one embodiment, a misalignment measuring apparatus includes: an input circuit; a storage medium; a first circuit configured to, in a first calibration pattern, calculate a second misalignment amount; a second circuit configured to, using a first image of a second calibration pattern, calculate a third misalignment amount; a third circuit configured to calculate a coefficient indicating; and a fourth circuit configured to, using a second image corresponding to the first and second patterns, calculate a third center position of a third contour and calculate the first misalignment amount between the first pattern and the second pattern based on the fourth misalignment amount and the coefficient. 1. A misalignment measuring apparatus that measures a first misalignment amount between a first pattern and a second pattern formed on the first pattern , the misalignment measuring apparatus comprising:an input circuit configured to receive an image;a storage medium configured to store the image;a first circuit configured to, in a first calibration pattern including a third pattern corresponding to the first pattern and a fourth pattern formed on the third pattern, calculate a second misalignment amount between the third pattern and the fourth pattern;a second circuit configured to, using a first image of a second calibration pattern including a fifth pattern corresponding to the first pattern and a sixth pattern formed on the fifth pattern and corresponding to the second pattern, calculate a first center position of a first contour based on a first threshold corresponding to the fifth pattern and a second center position of a second contour based on a second threshold corresponding to the fifth pattern, and calculate a third misalignment amount between the first center position and the second center position;a third circuit configured to calculate a coefficient indicating a relation between the second misalignment amount and the third misalignment amount; anda ...

APPARATUS AND METHOD OF MEASURING UNIFORMITY BASED ON PUPIL IMAGE AND METHOD OF MANUFACTURING MASK BY USING THE METHOD

An apparatus and method of measuring pattern uniformity, and a method of manufacturing a mask by using the measurement method are provided. The measurement apparatus includes a light source configured to generate and output light, a stage configured to support a measurement target, an optical system configured to transfer the light, output from the light source, to the measurement target supported on the stage, and a first detector configured to detect light reflected and diffracted by the measurement target, or diffracted by passing through the measurement target, wherein the first detector is configured to detect a pupil image of a pupil plane and to measure pattern uniformity of an array area of the measurement target on the basis of intensity of at least one of zero-order light and 1-order light of the pupil image. 1. An apparatus for measuring pattern uniformity on the basis of a pupil image , the apparatus comprising:a light source configured to generate and output light;a stage configured to support a measurement target;an optical system configured to transfer the light, output from the light source, to the measurement target supported on the stage; anda first detector configured to detect light reflected and diffracted by the measurement target, or diffracted by passing through the measurement target,{'sup': 'st', 'wherein the first detector is configured to detect a pupil image of a pupil plane and to measure pattern uniformity of an array area of the measurement target on the basis of intensity of at least one of zero-order light and 1-order light of the pupil image.'}2. The apparatus of claim 1 , whereinthe measurement target comprises a mask,the first detector is configured to detect a pupil image corresponding to light diffracted by passing through the mask, anda size of one shot of the first detector is about 40 μm*40 μm.3. The apparatus of claim 2 , wherein claim 2 , based on a diffraction angle of diffracted light in the array area differing from a ...

Pattern Matching Device and Computer Program for Pattern Matching

The purpose of the present invention is to provide a pattern matching device and computer program that carry out highly accurate positioning even if edge positions and numbers change. The present invention proposes a computer program and a pattern matching device wherein a plurality of edges included in first pattern data to be matched and a plurality of edges included in second pattern data to be matched with the first pattern data are associated, a plurality of different association combinations are prepared, the plurality of association combinations are evaluated using index values for the plurality of edges, and matching processing is carried out using the association combinations selected through the evaluation. 1. A pattern matching device comprising:a calculation processing device that executes pattern matching by using design data or pattern data formed on the basis of a captured image,wherein the calculation processing device associates a plurality of edges included in a first pattern data and a plurality of edges included in a second pattern data with each other between the first pattern data to be matched and the second pattern data to be matched with the first pattern data, prepares a plurality of different association combinations, evaluates the plurality of association combinations by using index values regarding the plurality of edges, and executes matching processing using the association combination selected through the evaluation.2. The pattern matching device according to claim 1 ,wherein the calculation processing device associates a plurality of edges candidates included in the first pattern data and a plurality of edges candidates included in the second pattern data with each other, and generates a plurality of association combinations having different types of association.3. The pattern matching device according to claim 1 ,wherein the calculation processing device executes the evaluation by using an edge intensity included in the first ...

Dual mode inspector

A dual mode inspector includes an optical inspector configured to detect a defect located at a first location on a sample, a microscope configured to capture an image of the defect at the first location on the sample, and a platform that is configured to support the sample. The sample is not removed from the platform between the detecting of the defect located at the first location on the sample and the capturing of the image of the defect at the first location on the sample. The dual mode optical inspector also includes a controller that causes the optical inspector to detect the defect located at the first location on the sample and causes the microscope to capture the image of the defect at the first location on the sample. The dual mode inspector also performs scanning lens distortion correction to improve the capturing of defect images.

Method Of Utilizing Information On Shape Of Frequency Distribution Of Inspection Result In A Pattern Inspection Apparatus

A pattern inspection method includes: generating an image of an inspection area including a pattern to be inspected; obtaining, from the image, measured values representing two-dimensional shape information of the pattern to be inspected; producing a frequency distribution of the measured values; calculating a statistic of the measured values; calculating a change in the statistic while carrying out an inspection operation which comprises repeating the processes from generating the image to calculating the statistic; and terminating the inspection operation if the change in the statistic is smaller than a threshold value. 1. A pattern inspection method comprising:generating an image of an inspection area including a pattern to be inspected;obtaining, from the image, measured values representing two-dimensional shape information of the pattern to be inspected;producing a frequency distribution of the measured values;calculating a statistic of the measured values;calculating a change in the statistic while carrying out an inspection operation which comprises repeating the processes from generating the image to calculating the statistic; andterminating the inspection operation if the change in the statistic is smaller than a threshold value.2. The pattern inspection method according to claim 1 , further comprising:classifying the measured values according to pattern information using design data if there are a plurality of peaks in the frequency distribution or there are outliers in the frequency distribution.3. The pattern inspection method according to claim 1 , wherein the two-dimensional shape information of the pattern to be inspected is a Critical Dimension value of the pattern to be inspected or a representative value of two-dimensional pattern shape information.4. The pattern inspection method according to claim 2 , wherein the design data include at least one pattern information selected from a group consisting of a line width of the pattern to be inspected ...

Systems and methods of using z-layer context in logic and hot spot inspection for sensitivity improvement and nuisance suppression

Systems and methods for removing nuisance data from a defect scan of a wafer are disclosed. A processor receives a design file corresponding to a wafer having one or more z-layers. The processor receives critical areas of the wafer and instructs a subsystem to capture corresponding images of the wafer. Defect locations are received and the design file is aligned with the defect locations. Nuisance data is identified using the potential defect location and the one or more z-layers of the aligned design file. The processor then removes the identified nuisance data from the one or more potential defect locations. 1. A method for removing nuisance data comprising:receiving, at a processor, a design file corresponding to a wafer, the design file having one or more z-layers;receiving, at the processor, one or more critical areas of the wafer;instructing an image data acquisition subsystem to capture one or more images corresponding to the one or more critical areas of the wafer;receiving, at the processor, one or more potential defect locations in the one or more images corresponding to the one or more critical areas of the wafer;aligning, using the processor, the design file with the one or more potential defect locations corresponding to the one or more critical areas of the wafer;identifying, using the processor, nuisance data in the one or more potential defect locations based on each potential defect location and the one or more z-layers of the aligned design file; andremoving, using the processor, the identified nuisance data from the one or more potential defect locations.2. The method of claim 1 , further comprising:analyzing the design file, using the processor, to determine the one or more critical areas of the wafer based on pre-determined design rules.3. The method of claim 1 , wherein the nuisance data is identified based on whether the location of each potential defect location is proximal to pattern data in each z-layer of the aligned design file.4. The ...

INSPECTION METHOD, INSPECTION SYSTEM, AND METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE USING THE SAME

An inspection method includes generating first layout data including information on a shape of a first pattern group, generating second layout data including information on a shape of a second pattern group, obtaining a target image including images of the first and second pattern groups, and detecting a defect pattern from the target image by comparing the first and second layout data with the target image. The first pattern group, the second pattern group, and the defect pattern are provided at different heights from each other, from a top surface of a substrate. 1. An inspection method comprising:generating first layout data, the first layout data including information on a first shape of a first pattern group;generating second layout data, the second layout data including information on a second shape of a second pattern group;obtaining a target image, the target image including images of the first pattern group and the second pattern group; and 'the first pattern group, the second pattern group, and the defect pattern are patterns at different heights relative to a top surface of a substrate.', 'detecting a defect pattern based on the first layout data, the second layout data, and the target image, wherein'}2. The inspection method of claim 1 , wherein the detecting of the defect pattern comprises:selecting a portion of the target image as an image of the defect pattern such that the portion of the target image does not coincide with the information on the first shape and the second shape.3. (canceled)4. The inspection method of claim 3 , wherein the obtaining the first image obtain the first image using light incident in a direction inclined to the top surface of the substrate.5. The inspection method of claim 3 , wherein the detecting of the first defect pattern comprises:selecting a portion of the first image as an image of the first defect pattern such that the portion of the first image does not coincide with the information on the shape in the first ...

SUBSTRATE DEFECT INSPECTION APPARATUS, METHOD OF ADJUSTING SENSITIVITY PARAMETER VALUE FOR SUBSTRATE DEFECT INSPECTION, AND NON-TRANSITORY STORAGE MEDIUM

A method of adjusting a sensitivity parameter value for substrate defect inspection used in a substrate defect inspection apparatus compares, for each pixel value of a selected virtual inspection substrate, using reference pixel data to be used after adjustment, the deviation amount from an allowable range corresponding to the position thereof and the sensitivity parameter value before the adjustment when each pixel value is deviated from the allowable range, and updates the deviation amount as a new sensitivity parameter value when the deviation amount exceeds the sensitivity parameter value and a difference between the deviation amount and the sensitivity parameter value is equal to or less than a threshold value. 1. A substrate defect inspection apparatus for inspecting a substrate for a defect , configured to compare , for each pixel value of image data obtained by picking up an image of an entire front surface of a substrate being an inspection object , using reference pixel data made by associating each position and an allowable range of the pixel value , a deviation amount from the allowable range and a sensitivity parameter value being an allowable deviation amount when each pixel value is deviated from the allowable range corresponding to the position thereof , and determine the substrate to be a defective substrate when the deviation amount exceeds the sensitivity parameter value , the substrate defect inspection apparatus comprising:a reference pixel data creation unit that creates, at adjustment time of the sensitivity parameter value, reference pixel data to be used after the adjustment;an adjustment unit for the sensitivity parameter value for adjusting the sensitivity parameter value; anda virtual inspection substrate selection unit that selects a plurality of virtual inspection substrates which are used for adjusting the sensitivity parameter value and on which virtual inspection being inspection for adjusting the sensitivity parameter is to be ...

METHOD AND SYSTEM FOR EVALUATING EFFICIENCY OF MANUAL INSPECTION FOR DEFECT PATTERN

A method for evaluating an efficiency of a manual inspection for a defect pattern is provided according to an embodiment of the disclosure, which comprises: enabling an evaluation program; loading a test image automatically by the enabled evaluation program and displaying the test image in a user interface; detecting a user behavior of a user after the user watches the test image; generating original data according to the user behavior, wherein the original data reflects at least one of whether the user identifies the defect pattern in the test image and a type of the defect pattern identified by the user; and performing a quantitative operation on the original data to generate evaluation data corresponding to the efficiency of the manual inspection, wherein the evaluation data reflects an evaluation result corresponding to the efficiency of the manual inspection. 1. A method for evaluating an efficiency of a manual inspection for a defect pattern , comprising:enabling an evaluation program;loading a test image automatically by the enabled evaluation program and displaying the test image in a user interface;detecting a user behavior of a user after the user watches the test image;generating original data according to the user behavior, wherein the original data reflects at least one of whether the user identifies the defect pattern in the test image and a type of the defect pattern identified by the user; andperforming a quantitative operation on the original data to generate evaluation data corresponding to the efficiency of the manual inspection, wherein the evaluation data reflects an evaluation result corresponding to the efficiency of the manual inspection.2. The method according to claim 1 , wherein the test image comprises a non-defect image and a defect image claim 1 , the defect image comprises the defect pattern claim 1 , and the non-defect image does not comprise the defect pattern.3. The method according to claim 2 , wherein a ratio of a number of the ...

DEFECT INSPECTION SYSTEM AND METHOD USING ARTIFICIL INTELLIGENCE

A defect inspection system, connected to an automatic visual inspection device, is provided, including the followings. A re-inspection server (VRS) receives a defect image and a defect location. A training terminal stores trained modules. A classification terminal receives the defect image and the defect location, reads a target trained module corresponding to the defect image, classifies the defect image according to the target trained module to obtain a labeled defect image, and sends the labeled defect image to the VRS. A re-inspection terminal receives the labeled defect image from the VRS, and sends a verified operation corresponding to the labeled defect image to the VRS. A labeling re-inspection terminal receives the verified operation and the labeled defect image, and a labeling result corresponding to the labeled defect image. The VRS sends the labeling result and the labeled defect image to the training terminal to train a corresponding training module. 1. A defect inspection system using artificial intelligence and connected to an automatic visual inspection device , the defect inspection system comprising:a re-inspection server, connected to the automatic visual inspection device and receiving a defect image and a defect location from the automatic visual inspection device;a training terminal, connected to the re-inspection server and storing at least one trained module;a classification terminal, connected to the re-inspection server and the training terminal, receiving the defect image and the defect location from the re-inspection server, reading a target trained module corresponding to the defect image in the at least one trained module, classifying the defect image according to the target trained module to generate a labeled defect image, and sending the labeled defect image to the re-inspection server;a re-inspection terminal, connected to the re-inspection server, receiving the labeled defect image sent from the re-inspection server, receiving a ...

RANKING OF OBJECTS WITH NOISY MEASUREMENTS

A method includes, for each data object of a plurality of data objects, performing a measurement on a plurality of instances of the data object to generate a plurality of measurement values for the data object, and generating a distribution of the measurement values for the data object. The method further includes generating an aggregate distribution based on each of the distributions of the measurement values generated for the data objects, and scoring a first data object of the plurality of data objects based on the distribution of the measurement values for the first data object and the aggregate distribution. 1. At least one machine readable storage medium having instructions stored thereon , the instructions when executed by a machine to cause the machine to: perform a measurement on a plurality of instances of the data object to generate a plurality of measurement values for the data object; and', 'generate a distribution of the measurement values for the data object;, 'for each data object of a plurality of data objectsgenerate an aggregate distribution based on each of the distributions of the measurement values generated for the data objects; andscore a first data object of the plurality of data objects based on the distribution of the measurement values for the first data object and the aggregate distribution.2. The at least one medium of claim 1 , wherein generating the aggregate distribution comprises:for each bin of a plurality of bins that are each associated with a distinct measurement value range, aggregating a count of instances of the data objects that have a measurement value within a measurement value range of the bin, andassociating the aggregated counts of instances with corresponding bins of the aggregate distribution.3. The at least one medium of claim 2 , wherein the instructions when executed are to cause the machine to determine the widths of the plurality of bins based on the measurement values generated for the data objects.4. The at ...

BROAD BAND PLASMA INSPECTION BASED ON A NUISANCE MAP

A noise map is used for defect detection. One or more measurements of intensities at one or more pixels are received and an intensity statistic is determined for each measurement. The intensity statistics are grouped into at least one region and stored with at least one alignment target. A wafer can be inspected with a wafer inspection tool using the noise map. The noise map can be used as a segmentation mask to suppress noise. 1. A system comprising: an imaging system; and', 'a chuck configured to hold a wafer; and, 'a wafer inspection tool including determining an intensity statistic for each of one or more measurements of intensities at one or more pixels;', 'grouping the intensity statistics into one or more regions; and', 'storing the intensity statistics., 'a processor in electronic communication with the imaging system, wherein the processor is configured to generate a noise map and send instructions to the wafer inspection tool to inspect the wafer using the noise map, wherein the noise map is used as a segmentation mask to suppress noise, and wherein generating the noise map includes2. The system of claim 1 , wherein the processor is disposed in the wafer inspection tool.3. The system of claim 1 , wherein the intensity statistic is a range of the one or more measurements of intensities.4. The system of claim 1 , wherein the intensity statistic is a variance of the one or more measurements of intensities.5. The system of claim 1 , wherein the processor is further configured to correlate the noise map with design information.6. The system of claim 1 , wherein the processor is further configured to correlate the noise map with care areas.7. The system of claim 7 , wherein the care area is from a different layer on the wafer.8. The system of claim 1 , wherein the processor is further configured to create an automatic region during a recipe setup.9. The system of claim 1 , wherein the processor is further configured to apply the noise map to an alignment target ...

Electronic Component Handler And Electronic Component Tester

An electronic component handler includes: a region where an electronic component placing unit on which an electronic component is placed is capable of being disposed; a transport unit having a first hand and a second hand for holding and transporting the electronic component; a light irradiation unit which is capable of emitting light toward the electronic component placing unit and capable of adjusting an emitting direction of the light; a capturing unit which is capable of capturing an image of the electronic component placing unit irradiated with the light via a space between the first hand and the second hand; and a control unit which performs determination processing about the presence or absence of the electronic component in the electronic component placing unit based on the image captured by the capturing unit. 1. An electronic component handler comprising:a region for accommodating an electronic component support on which an electronic component is placed;a transporter having a first hand and a second hand for holding and transporting the electronic component;a light source which is configured to emit light toward the electronic component support and configured to adjust an emitting direction of the light;a camera which is configured to capture an image of the electronic component support irradiated with the light via a space between the first hand and the second hand;a display which displays the image captured by the camera; anda controller which controls the transporter, the light source, and the camera, and is configured to determine a presence or absence of the electronic component on the electronic component support based on the image captured by the camera,wherein the camera captures a first image when the transporter is positioned at a first position and captures a second image when the transporter is positioned at a second position different from the first position, andwherein the controller displays the first image and the second image together the ...

PATTERN EDGE DETECTION METHOD

A method capable of accurately detecting an edge of a pattern on an upper layer and an edge of a pattern on a lower layer is disclosed. The pattern edge detection method includes: generating a sample image of an upper-layer pattern and a lower-layer pattern; applying a first image processing, which is for emphasizing an edge of the upper-layer pattern, to the sample image, thereby generating a first processed image; detecting the edge of the upper-layer pattern based on a brightness profile of the first processed image; applying a second image processing, which is for emphasizing an edge of the lower-layer pattern, to the sample image, thereby generating a second processed image; and detecting the edge of the lower-layer pattern based on a brightness profile of the second processed image. 1. A pattern edge detection method comprising:generating a sample image of an upper-layer pattern and a lower-layer pattern;applying a first image processing, which is for emphasizing an edge of the upper-layer pattern, to the sample image, thereby generating a first processed image;detecting the edge of the upper-layer pattern based on a brightness profile of the first processed image;applying a second image processing, which is for emphasizing an edge of the lower-layer pattern, to the sample image, thereby generating a second processed image; anddetecting the edge of the lower-layer pattern based on a brightness profile of the second processed image.2. The pattern edge detection method according to claim 1 , wherein:the first image processing is a tone-curve processing that emphasizes the edge of the upper-layer pattern; andthe second image processing is a tone-curve processing that emphasizes the edge of the lower-layer pattern.3. The pattern edge detection method according to claim 2 , wherein:the tone-curve processing applied to the first image processing is a process of lowering a brightness value at an intermediate level between a brightness value of the upper-layer pattern ...

WIRELESS CAMERA WAFER FOR VACUUM CHAMBER DIAGNOSTICS

In some embodiments, the present disclosure relates to a process tool which includes a housing that defines a vacuum chamber. A wafer chuck is in the housing, and a carrier wafer is on the wafer chuck. A structure that is used for deposition processes is arranged at a top of the housing. A camera is integrated on the wafer chuck such that the camera faces a top of the housing. The camera is configured to wirelessly capture images of the structure used for deposition processes within the housing. Outside of the housing is a wireless receiver. The wireless receiver is configured to receive the images from the camera while the vacuum chamber is sealed. 1. A process tool , comprising:a housing defining a vacuum chamber;a wafer chuck in the housing;a carrier wafer on the wafer chuck;a structure used for deposition processes arranged at a top of the housing;a camera integrated on the carrier wafer, wherein the camera faces the top of the housing and is configured to wirelessly capture images of the structure used for deposition processes within the housing; anda wireless receiver outside the housing and configured to wirelessly receive the images from the camera while the vacuum chamber is sealed.2. The process tool of claim 1 , wherein the structure used for deposition processes comprises a target material for physical vapor deposition.3. The process tool of claim 1 , wherein the structure used for deposition processes is a shower head used for chemical vapor deposition.4. The process tool of claim 1 , wherein the wireless receiver is configured to determine if the structure used for deposition processes comprises defects.5. The process tool of claim 1 , wherein the camera is configured to take a two-dimensional image of the structure used for deposition processes.6. The process tool of claim 1 , further comprising:a light source within the housing and arranged below the structure used for deposition processes, wherein the light source is configured to apply light ...

MONITORING OF PROCESS CHAMBER

The present disclosure describes a method for controlling a wet processing system includes dispensing one or more chemicals into a processing chamber according to one or more process parameters. The method also includes injecting one or more illumination markers into the processing chamber and obtaining images representing locations of the one or more illumination markers. The method further includes determining a trajectory of an illumination marker of the one or more illumination markers based on the images and determining whether the determined trajectory is outside a predetermined trajectory range. In response to the determined trajectory being outside the predetermined trajectory range, the method further includes adjusting the one or more process parameters. 1. A method for controlling a wet processing system , comprising:dispensing one or more chemicals into a processing chamber according to one or more process parameters;injecting one or more illumination markers into the processing chamber;obtaining images representing locations of the one or more illumination markers;determining a trajectory of an illumination marker of the one or more illumination markers based on the images;determining whether the determined trajectory is outside a predetermined trajectory range; andin response to the determined trajectory being outside the predetermined trajectory range, adjusting the one or more process parameters.2. The method of claim 1 , wherein the dispensing the one or more chemicals comprises dispensing claim 1 , by a spray nozzle claim 1 , one or more wet chemical solutions into a target inspection area of the processing chamber.3. The method of claim 2 , wherein the one or more process parameters comprise at least one of an angle of the spray nozzle claim 2 , a height of the spray nozzle claim 2 , and a lateral scanning speed of the spray nozzle.4. The method of claim 1 , wherein the one or more process parameters comprise at least one of a flow rate and a ...

Using E0 Exposures for Track/Cluster Monitoring

Techniques for using open frame (E0) exposures for lithographic tool track/cluster monitoring are provided. In one aspect, a method for monitoring a lithographic process includes: performing open frame exposures E0 of at least one wafer coated with a photoresist using a photolithography tool; baking and developing the at least one wafer; performing a defect inspection of the at least one wafer to generate a haze map; grouping haze data from the haze map; and analyzing the haze data to identify a maximum E0 response dose E′. 1. A method for monitoring a photolithographic process , the method comprising:performing open frame exposures E0 of at least one wafer coated with a photoresist using a photolithography tool;baking and developing the at least one wafer;performing a defect inspection of the at least one wafer to generate a haze map;grouping haze data from the haze map; andanalyzing the haze data to identify a maximum E0 response dose E′.2. The method of claim 1 , wherein the open frame exposures are performed using an extreme ultraviolet (EUV) scanner.3. The method of claim 1 , wherein performing the defect inspection of the at least one wafer comprises:performing a full surface scan of the at least one wafer.4. The method of claim 3 , wherein the full surface scan of the at least one wafer is performed using a defect inspection tool that detects and analyzes oblique light scattered from a surface of the at least one wafer.5. The method of claim 1 , wherein the haze data is grouped into columns.6. The method of claim 1 , wherein the open frame exposures E0 are performed at varying doses across a surface of the at least one wafer.7. The method of claim 6 , further comprising:determining a mean haze data value for each of the doses.8. The method of claim 7 , further comprising:using the mean haze data value to identify E′ for each wafer exposure.9. The method of claim 1 , further comprising:determining whether E′ has shifted outside of a predetermined E′ response ...

ALERT DEVICE AND ALERT METHOD THEREOF

The present disclosure provides an alert device and an alert method. The alert device includes an image capturing unit, an input/output unit and a processing unit. The image capturing unit is configured to capture at least one image of a wafer transportation system. The processing unit is configured to: retrieve the at least one image from the image capturing unit; define a first boundary in the at least one image; identify a wafer chuck of the wafer transportation system in the at least one image; determine whether the wafer chuck intersects the first boundary in the at least one image; and transmit an alert signal to the wafer transportation system via the input/output unit when the wafer chuck is determined to intersect the first boundary in the at least one image. 1. An alert device , comprising:an image capturing unit, being configured to capture at least one image of a wafer transportation system;an input/output unit, being configured to communicate with the wafer transportation system; retrieve the at least one image from the image capturing unit;', 'define a first boundary in the at least one image;', 'identify a wafer chuck of the wafer transportation system in the at least one image;', 'determine whether the wafer chuck intersects the first boundary in the at least one image; and', 'transmit an alert signal to the wafer transportation system via the input/output unit when the wafer chuck is determined intersect the first boundary in the at least one image., 'a processing unit, being connected to the input/output unit and the image capturing unit electrically, and configured to2. The alert device of claim 1 , wherein the processing unit is further configured to:define a second boundary in the at least one image;determine whether the wafer chuck intersects the second boundary in the at least one image; andtransmit the alert signal to the wafer transportation system via the input/output unit when the wafer chuck is determined intersect the second boundary in ...

APPARATUS AND METHOD FOR INSPECTING PINS ON A PROBE CARD

Embodiments described herein generally relate to methods and apparatuses for ensuring the integrity of probe card assemblies and verifying that probe cards are ready for testing. In one embodiment, an apparatus includes a stage that allows stable and precise movement of a sensor. The stage includes a first support, a second support, and a sensor carrier. A plurality of lifting devices is coupled to the second support and the sensor carrier, providing a more stable and precise movement for the sensor carrier. Methods for identifying objects other than the probes disposed on a surface of a probe card and to determine whether the probe card is ready for use are disclosed. 1. An apparatus for analyzing a probe card , comprising: a base;', 'a first support;', 'a second support, wherein the second support is coupled to a first plurality of lifting devices;', 'a sensor carrier disposed over the first and second supports, wherein the sensor carrier is coupled to a second plurality of lifting devices; and', 'a sensor disposed on the sensor carrier., 'a stage, wherein the stage comprises2. The apparatus of claim 1 , wherein the first support comprises two substantially parallel rails that are fixed to the base.3. The apparatus of claim 2 , wherein the second support comprises a first beam disposed between the two rails of the first support claim 2 , a rotor disposed over the first beam claim 2 , and a second beam disposed over the rotor.4. The apparatus of claim 3 , further comprising one or more pairs of air bearings disposed on the two rails of the first support claim 3 , wherein the first beam of the second support is disposed between each pair of air bearings.5. The apparatus of claim 3 , further comprising a bracket coupled to the sensor carrier claim 3 , and the second beam of the second support is disposed between the bracket and the sensor carrier.6. The apparatus of claim 5 , wherein the sensor carrier includes a first beam claim 5 , a sensor support claim 5 , and a ...

Failure pattern obtaining method and apparatus

A failure pattern obtaining method and apparatus are provided. The method includes that: a chip test result picture for a wafer is obtained, the chip test result picture being marked with a plurality of failure test points; a vector for every two points among all failure test points is calculated; a plurality of failure test points having a same vector are designated as a same group; a plurality of pending failure patterns are separated from each of groups; a failure pattern is obtained based on the plurality of the pending failure patterns.

METHOD AND APPARATUS FOR RETICLE OPTIMIZATION

A method includes determining topographic information of a substrate for use in a lithographic imaging system, determining or estimating, based on the topographic information, imaging error information for a plurality of points in an image field of the lithographic imaging system, adapting a design for a patterning device based on the imaging error information. In an embodiment, a plurality of locations for metrology targets is optimized based on imaging error information for a plurality of points in an image field of a lithographic imaging system, wherein the optimizing involves minimizing a cost function that describes the imaging error information. In an embodiment, locations are weighted based on differences in imaging requirements across the image field. 1. A method comprising:determining topographic information of a substrate for use in a lithographic imaging system;determining or estimating, by a hardware computer system based on the topographic information, imaging error information for a plurality of points in an image field of the lithographic imaging system; andadapting a design for a patterning device based on the imaging error information.2. A method as in claim 1 , wherein the adapting the design comprises determining locations of metrology targets on the patterning device.3. A method as in claim 1 , wherein the adapting the design comprises adapting a layout of the design.4. A method as in claim 3 , wherein the adapting the layout comprises adapting a die layout of the design.5. A method as in claim 3 , wherein the adapting the layout comprises adapting a functional block layout of the design.6. A method as in claim 1 , wherein the imaging error information comprises a non-correctible error information of the lithographic imaging system.7. A method as in claim 1 , further comprising determining imaging parameters for a plurality of points in the image field of the lithographic imaging system for an imaging recipe to be used with the patterning device. ...

Wafer nanotopography metrology for lithography based on thickness maps

A method for lithography nanotopography metrology is provided. The method includes receiving wafer thickness data for a plurality of wafers and applying an elongated filter to the wafer thickness data to produce a filtered thickness map for each of the plurality of wafers. The filter has a first cutoff wavelength in the x-direction and a second cutoff wavelength in the y-direction. The method further includes generating a report including at least one wafer metric associated with the filtered thickness map.

APPARATUS AND METHODS FOR PREDICTING WAFER-LEVEL DEFECT PRINTABILITY

Disclosed are methods and apparatus for qualifying a photolithographic reticle. A reticle inspection tool is used to acquire images at different imaging configurations from each of the pattern areas of a calibration reticle. A reticle near field is recovered for each of the pattern areas of the calibration reticle based on the acquired images from each pattern area of the calibration reticle. Using the recovered reticle near field for the calibration reticle, a lithography model for simulating wafer images is generated based on the reticle near field. Images are then acquired at different imaging configurations from each of the pattern areas of a test reticle. A reticle near field for the test reticle is then recovered based on the acquired images from the test reticle. The generated model is applied to the reticle near field for the test reticle to simulate a plurality of test wafer images, and the simulated test wafer images are analyzed to determine whether the test reticle will likely result in an unstable or defective wafer. 1. A method of qualifying a photolithographic reticle , the method comprising:using an optical reticle inspection tool, acquiring a plurality of images at different imaging configurations from each of a plurality of pattern areas of a calibration reticle;recovering a reticle near field for each of the pattern areas of the calibration reticle based on the acquired images from each pattern area of the calibration reticle;using the recovered reticle near field for the calibration reticle, generating a lithography model for simulating a plurality of wafer images based on the reticle near field;using an optical reticle inspection tool, acquiring a plurality of images at different imaging configurations from each of a plurality of pattern areas of a test reticle;recovering a reticle near field for each of the pattern areas of the test reticle based on the acquired images from each pattern area of the test reticle;applying the generated model to ...

METHOD OF ANALYZING LATTICE STRAIN OF SEMICONDUCTOR DEVICE

A method of analyzing lattice strain of a semiconductor device includes generating a spectrum image by performing a Fourier Transform on an image of a semiconductor device, providing a first hybrid mask filter t filter designed to select at least one peak frequency from the spectrum image, filtering the spectrum image using the first hybrid mask filter to generate a filtered spectrum image, and generating a first strain image by performing an inverse Fourier Transform on the filtered spectrum image. 1. A method of analyzing lattice strain of a semiconductor device , the method comprising:generating a spectrum image by performing a Fourier Transform on an image of a semiconductor device;providing a first hybrid mask filter based on a hybrid function obtained by combining a plurality of different functions;filtering the spectrum image using the first hybrid mask filter to generate a filtered spectrum image; andgenerating a first strain image by performing an inverse Fourier Transform on the filtered spectrum image.3. The method of claim 1 , further comprising digitizing spatial resolution and noise of the first strain image.4. The method of claim 3 , wherein the spatial resolution is a minimum separation distance by which two peaks in the first strain image are distinguished from each other claim 3 , and the digitized noise is determined from a standard deviation of the hybrid function.5. The method of claim 4 , wherein the two peaks have a valley therebetween claim 4 , which has an intensity value equal to or less than a predetermined percentage of a lesser intensity value of intensity values of the two peaks.6. The method of claim 3 , wherein the spatial resolution is digitized by the Rayleigh Criterion.7. The method of claim 2 , wherein designing the first hybrid mask filter comprises calculating preliminary strain images based on arbitrary first and second parameter values for the first and second parameters claim 2 , measuring a digitized spatial resolution and ...

Repeater Defect Detection

Repeater defects on a wafer can be detected by fusing multiple die images. In an instance, multiple die images are statistically fused to form a die-fused image. Each of the die images can be of a different die on a wafer. A presence of a repeater defect is detected in the die-fused image. The die images can be generated using a laser-scanning system or other systems. 1. A method comprising:statistically fusing a plurality of die images to form a die-fused image using a controller, wherein each of the die images is of a different die, and wherein the plurality of die images includes images from multiple inspection channels; anddetecting, using the controller, a presence of a repeater defect in the die-fused image.2. The method of claim 1 , wherein the detecting uses statistical image processing.3. The method of claim 1 , wherein the statistically fusing includes fusing signals.4. The method of claim 1 , wherein the statistically fusing includes fusing a signal-to-noise ratio.5. The method of claim 1 , wherein the multiple inspection channels include a bright field inspection channel and a dark field inspection channel.6. The method of claim 1 , wherein each of the die images is of a single wafer.7. The method of claim 1 , further comprising subtracting a background using the controller and scaling for background noise using the controller.8. The method of claim 1 , wherein the plurality of die images includes at least three of the die images.9. The method of claim 1 , wherein the die images are formed using at least one of laser inspection and broad band plasma inspection.10. A non-transitory computer readable medium storing a program configured to instruct a processor to:statistically fuse a plurality of die images to form a die-fused image, wherein each of the die images is of a different die, and wherein the plurality of die images includes images from multiple inspection channels; anddetect a presence of a repeater defect in the die-fused image.11. The non- ...

WAFER INSPECTING APPARATUS

A micro camera is placed in an appropriate image capturing position therefor on the basis of a center-to-center distance depending on a rotational angle of a holding table. Even in the case where the center C of a holding surface and the center C of a wafer are displaced out of alignment with each other, allowing a position in X-axis directions of an outer circumference of the wafer to vary as the holding table rotates, a control unit can make an image capturing range of the micro camera follow the varying position of the outer circumference of the wafer. Therefore, the image capturing range of the micro camera can be determined with ease. Both a surface of the wafer and the outer circumference of the wafer can be inspected simply when two cameras are moved along the X-axis directions by a single X-axis moving mechanism. 1a macro camera for capturing images of the surface of the wafer;a micro camera for capturing an image of the outer circumference of the wafer, the micro camera having a narrower image capturing range and a higher magnification ratio than the macro camera;a holding table having a holding surface for holding the wafer thereon;an electric motor for rotating the holding table about an axis at a center of the holding surface;an angle recognizer for recognizing a rotational angle of the holding table that is rotated by the electric motor;a support supporting the macro camera and the micro camera thereon;an X-axis moving mechanism for moving the support in X-axis directions parallel to the holding surface; anda control unit, a center calculating section for moving the macro camera to a position capable of capturing the image of the outer circumference of the wafer, recognizing coordinates of at least three points on the outer circumference of the wafer from the images captured by the macro camera, and calculating center coordinates of the wafer on the basis of the coordinates of the three points, and', 'a distance calculating section for acquiring a ...

UNSUPERVISED CLUSTERING TO IDENTIFY ANOMALIES

Images are accessed representing a status in a fabrication of a semiconductor chip corresponding to a particular stage in the fabrication. Distortion is removed from the images and actual features of the semiconductor chip are extracted from the images. Synthesized ideal features of the semiconductor chip associated with completion of the particular stage in the fabrication are determined from the one or more images. The actual features are compared to the ideal features to determine whether anomalies associated with the particular stage exist in the semiconductor chip 1. At least one machine-readable storage medium with instructions stored thereon , wherein the instructions are executable by a machine to cause the machine to:receive an input, wherein the input comprises one or more images representing a status in a fabrication of a semiconductor chip, wherein the status corresponds to a stage in the fabrication;remove distortion from the one or more images;extract actual features of the semiconductor chip as observed from the one more images;determine synthesized ideal features of the semiconductor chip associated with completion of the stage in the fabrication from the one or more images; andcompare the actual features to the ideal features to determine whether anomalies associated with the stage exist in the semiconductor chip.2. The storage medium of claim 1 , wherein the determination of the ideal features comprises using historical data to determine the ideal features from the one or more images.3. The storage medium of claim 1 , wherein the determination of the ideal features comprises using a design layout for the semiconductor chip to determine the ideal features from the one or more images.4. The storage medium of claim 1 , wherein the extraction of actual features comprises detecting contours visible on the one or more images.5. The storage medium of claim 4 , wherein the contours are detected based on differing colors in the one or more images.6. The ...

Method of inspecting a semiconductor processing chamber using a vision sensor, and method for manufaturing a semiconductor device using the same

A method of inspecting a semiconductor processing chamber includes providing a vision sensor into the semiconductor processing chamber, aligning the vision sensor on a target in the semiconductor processing chamber, obtaining an object image of the target using an image scanning module of the vision sensor, generating a three dimensional model of the target based on the object image, and obtaining a physical quantity of the target from the three dimensional model. The obtaining of the object image of the target includes projecting a pattern onto the target using an illuminator of the image scanning module, and scanning an image of the target in which the pattern is projected, using a camera of the image scanning module.

HIGH ACCURACY BEAM PLACEMENT FOR LOCAL AREA NAVIGATION

An improved method of high accuracy beam placement for local area navigation in the field of semiconductor chip manufacturing. Preferred embodiments of the present invention can also be used to rapidly navigate to one single bit cell in a memory array or similar structure, for example to characterize or correct a defect in that individual bit cell. High-resolution scanning is used to scan only a “strip” of cells on the one edge of the array (along either the X axis and the Y axis) to locate a row containing the desired cell followed by a similar high-speed scan along the located row (in the remaining direction) until the desired cell location is reached. This allows pattern-recognition tools to be used to automatically “count” the cells necessary to navigate to the desired cell, without the large expenditure of time required to image the entire array. 1. A method for high accuracy beam placement and navigation to a feature of interest having a known cell address X , Y within an array of cells on a sample surface , comprising:loading a sample into a particle beam system;acquiring an image of at least a portion of the array at a first image resolution, the image having a field of view large enough to include the location of the feature of interest and at least one corner of the array;forming at least one fiducial on the sample surface at a location near the estimated location of the feature of interest;obtaining an image of an edge strip along an edge of the array, said edge strip image having a resolution high enough that the pixel size is less than half of the minimum repeating dimension of the cells in the array, and the edge strip image being at least X cells in length and substantially smaller than the field of view in the first image;using pattern recognition to automatically count X cells to determine the location of the desired row containing the feature of interest;obtaining a row strip image along the desired row, said row strip image having a resolution ...

PATTERN CHARACTERISATION METHOD

A method of characterizing a pattern includes determining an image of the contour of the pattern to be characterized with an imagining instrumentation; processing the image, the processing including determining a plurality of points located along the contour and sampled according to a given sampling interval; for each point, identifying a point located on a reference contour and corresponding to the same sampling interval number and determining a dimensionless intermediate coefficient representative of the deviation between the point and the corresponding point on the reference contour; determining a final dimensionless coefficient on the basis of the set of intermediate coefficients corresponding to the plurality of points, the final coefficient being representative of the deviation between the contour of the pattern to be characterized and the reference contour. 1. A method of characterising a pattern comprising:determining an image of a contour of the pattern to be characterised using imagery instrumentation;processing said image, said processing including determining a plurality of points located along said contour and sampled at a given sampling rate;for each point, identifying a point located on a reference contour and corresponding to a same sampling step number and determining an intermediate dimensionless coefficient representing a difference between said point and the corresponding point on said reference contour;determining a final dimensionless coefficient using all intermediate coefficients corresponding to said plurality of points, said final coefficient being representative of the difference between the contour of the pattern to be characterised and the reference contour.2. The method according to claim 1 , wherein the number of points determined along the contour is more than or equal to a ratio between a length of the contour and a predetermined resolution value.3. The method according to claim 1 , wherein each sampled point is identified by a pair ...

Pattern Sensing Device and Semiconductor Sensing System

An object of the invention is to provide a pattern measuring device for generating appropriate reference pattern data while suppressing an increase in the manufacturing cost that would occur when manufacturing conditions are finely changed. A pattern measuring device has an arithmetic processing unit for measuring a pattern formed on a sample. The arithmetic processing unit, on the basis of signals obtained with a charged particle beam device, acquires or generates image data or contour line data on a plurality of circuit patterns created under different manufacturing conditions of a manufacturing apparatus, and generates reference data to be used for measurement of a circuit pattern from the image data or contour line data. 1. A pattern measuring device comprising an arithmetic processing unit configured to measure a pattern formed on a sample on the basis of an image obtained with a charged particle beam device , wherein:the arithmetic processing unit, on the basis of signals obtained with the charged particle beam device, acquires or generates image data or contour line data on a plurality of circuit patterns created under different manufacturing conditions of a manufacturing apparatus, and generates reference data to be used for measurement of a circuit pattern from the image data or the contour line data.2. The pattern measuring device according to claim 1 , wherein the arithmetic processing unit claim 1 , on the basis of measurement results of dimensions of the image data or the contour line data on the plurality of circuit patterns claim 1 , selects a plurality of manufacturing conditions that satisfy a predetermined condition claim 1 , and generates the reference data from the image data or the contour line data on a plurality of patterns formed under the plurality of manufacturing conditions.3. The pattern measuring device according to claim 1 , wherein the arithmetic processing unit claim 1 , on the basis of measurement results of dimensions of the image ...

Image Processing Architecture

An inspection system that receives image data corresponding to an image and processes the image data to produce a report corresponding to characteristics of the image. Interface cards receive the image data in a flow, where each interface card receives image data corresponding to a different portion of the image. Process nodes connect to the interface cards, and receive the image data from the interface cards. A host computer is connected to the process nodes, and job managers implemented in the host computer manage the flow of image data to and from the process nodes. The job managers remain operable during a crash of one of the process nodes. Process node programs are implemented in the process nodes, and analyze a portion of the image data and produce the report corresponding to the characteristics of the analyzed portion of the image data. At least one process node program is implemented in each process node. The process node programs rapidly analyze the image. The process node programs are isolated from the job managers so that a crash of a process node program does not crash the job manager. 1. An inspection system adapted to receive image data corresponding to an image and process the image data to produce a report corresponding to characteristics of the image , the inspection system comprising:interface cards adapted to receive the image data in a flow, where each interface card receives image data corresponding to a different portion of the image,process nodes connected to the interface cards and adapted to receive the image data from the interface cards,a host computer connected to the process nodes,job managers implemented in the host computer and adapted to manage the flow of image data to and from the process nodes, the job managers adapted to remain operable during a crash of one of the process nodes, andprocess node programs implemented in the process nodes and adapted to analyze a portion of the image data and produce the report corresponding to the ...

Die Bonding Apparatus and Manufacturing Method for Semiconductor Device

A die bonding apparatus includes a first illumination device for irradiating a die with light along an optical axis of a photographing device, and a second illumination device that is located above the first illumination device and irradiates the die with light having a predefined angle with respect to the optical axis. The second illumination device includes a second light emitting section, and a light path control member that limits a light path of second irradiation light emitted from the second light emitting section. The second illumination device is disposed in such a way that the second irradiation light, the light path of which is limited by the light path control member, passes through the cylinder of the first illumination device, and the top surface of the die is irradiated with the second irradiation light.

PROCESS PROXIMITY CORRECTION METHOD AND THE COMPUTING DEVICE FOR THE SAME

A process proximity correction method is performed by a process proximity correction computing device which performs a process proximity correction (PPC) through at least one of a plurality of processors. The process proximity correction method includes: converting a target layout including a plurality of patterns into an image, zooming-in or zooming-out the image at a plurality of magnifications to generate a plurality of input channels, receiving the plurality of input channels and performing machine learning to predict an after-cleaning image (ACI), comparing the predicted after-cleaning image with a target value to generate an after-cleaning image error, and adjusting the target layout on the basis of the after-cleaning image error. 1. A process proximity correction method performed by a process proximity correction computing device which performs a process proximity correction (PPC) through at least one of a plurality of processors , the process proximity correction method comprising:converting a target layout including a plurality of patterns into an image;zooming-in or zooming-out the image at a plurality of magnifications to generate a plurality of input channels;receiving the plurality of input channels and performing machine learning to predict an after-cleaning image (ACI);comparing the predicted after-cleaning image with a target value to generate an after-cleaning image error; andadjusting the target layout on the basis of the after-cleaning image error.2. The process proximity correction method of claim 1 , wherein the machine learning includes deep learning.3. The process proximity correction method of claim 2 , wherein the deep learning uses a generative adversarial network (GAN).4. The process proximity correction method of claim 2 , wherein the deep learning uses a convolutional neural network (CNN).5. The process proximity correction method of claim 2 , wherein the deep learning uses an artificial neural network (ANN).6. The process proximity ...

METHOD AND APPARATUS FOR DETERMINING THE POSITION OF STRUCTURE ELEMENTS OF A PHOTOLITHOGRAPHIC MASK

The invention relates to a method and an apparatus for determining a position of at least one structure element of a photolithographic mask, wherein the method comprises the following steps: (a) providing a reference image of the at least one structure element; (b) deriving a data record for the reference image, said data record comprising metadata relating to the reference image; (c) providing at least one measured image of the at least one structure element of the photolithographic mask; and (d) optimizing the reference image by use of the derived data record and correlating the at least one measured image and the optimized reference image. 1. A method for determining a position of at least one structure element of a photolithographic mask , the method comprising the following steps:a. providing a reference image of the at least one structure element;b. deriving a data record for the reference image, said data record comprising metadata relating to the reference image;c. providing at least one measured image of the at least one structure element of the photolithographic mask; andd. optimizing the reference image by use of the derived data record and correlating the at least one measured image and the optimized reference image.2. The method according to claim 1 , wherein the metadata relate to at least one of the following aspects:at least one defect of the reference image;at least one incorrect setting of a measurement table, which holds a reference mask while recording the reference image; andat least one parameter setting of an optical system of a position determination apparatus while recording the reference image.3. The method according to claim 2 , wherein the at least one defect of the reference image comprises at least one of the following causes: a positioning error of the at least one structure element of the reference image claim 2 , a critical dimension of the at least one structure element which lies outside of a predetermined range claim 2 , and noise ...

Technique for measuring overlay between layers of a multilayer structure

A method for determining overlay between layers of a multilayer structure may include obtaining a given image representing the multilayer structure, obtaining expected images for layers of the multilayer structure, providing a combined expected image of the multilayer structure as a combination of the expected images of said layers, performing registration of the given image against the combined expected image, and providing segmentation of the given image, thereby producing a segmented image, and maps of the layers of said multilayered structure. The method may further include determining overlay between any two selected layers of the multilayer structure by processing the maps of the two selected layers together with the expected images of said two selected layers.

HYBRID METROLOGY TECHNIQUE

A computerized system and method are provided for use in measuring at least one parameter of interest of a structure. The system comprises a server utility configured for data communication with at least first and second data provider utilities. The server utility receives, from the server provider utilities, measured data comprising first and second measured data pieces of different types indicative of parameters of the same structure; and is capable of processing the first and second measured data pieces for optimizing one or more first parameters values of the structure in one of the first and second measured data pieces by utilizing one or more second parameters values of the structure of the other of said first and second measured data pieces. 1. A computerized system for use in measuring at least one parameter of interest of a structure , the system comprising:a server utility configured for data communication with at least first and second data provider utilities, for receiving therefrom measured data comprising first and second measured data pieces of different types indicative of parameters of the same structure, said server utility being configured and operable for concurrently processing said first and second measured data pieces for optimizing one or more first parameters values of the structure in one of the first and second measured data pieces by utilizing one or more second parameters values of the structure of the other of said first and second measured data pieces.2. The system of claim 1 , wherein the server utility comprises:a first processing utility connected to the first data provider for receiving the first measured data piece and determining said one or more first parameters values;a second processing utility connected to the second data provider for receiving the second measured data piece and determining said one or more second parameters values; anda hybrid co-optimization utility connected to the first and second processing utilities, ...

Inspection of Noisy Patterned Features

Methods and systems for detecting defects on a specimen are provided. One system includes an inspection subsystem configured to generate images of a specimen and one or more computer subsystems configured for detecting defect candidates on the specimen. Detecting the defect candidates includes identifying a patterned feature in a test image included in the images generated of the specimen. Detecting the defect candidates also includes, for at least one pixel in the test image located within the patterned feature, determining a difference between a characteristic of the at least one pixel and the characteristic of other pixels in the test image located within a predetermined window of the at least one pixel. In addition, detecting the defect candidates includes detecting a defect candidate at the at least one pixel based on the determined difference. 1. A system configured to detect defects on a specimen , comprising:an inspection subsystem configured to generate images of a specimen; and identifying a patterned feature in a test image included in the images generated of the specimen;', 'for at least one pixel in the test image located within the patterned feature, determining a difference between a characteristic of the at least one pixel and the characteristic of other pixels in the test image located within a predetermined window of the at least one pixel; and', 'detecting a defect candidate at the at least one pixel based on the determined difference., 'one or more computer subsystems configured for detecting defect candidates on the specimen, wherein detecting the defect candidates comprises2. The system of claim 1 , wherein the patterned feature comprises a line on a redistribution layer.3. The system of claim 1 , wherein the patterned feature is formed of metal.4. The system of claim 1 , wherein the determining and detecting steps are performed without a reference image.5. The system of claim 1 , wherein said identifying comprises applying a mask to the test ...

DEFECT INSPECTION METHOD AND DEFECT INSPECTION DEVICE

In order to reduce the amount of time it takes to collect images of defects, this defect inspection device is provided with the following: a read-out unit that reads out positions of defects in a semiconductor wafer that have already been detected; a first imaging unit that takes, at a first magnification, a reference image of a chip other than the chip where one of the read-out defects is; a second imaging unit that takes, at the first magnification, a first defect image that contains the read-out defect; a defect-position identification unit that identifies the position of the defect in the first defect image taken by the second imaging unit by comparing said first defect image with the reference image taken by the first imaging unit; a third imaging unit that, on the basis of the identified defect position, takes a second defect image at a second magnification that is higher than the first magnification; a rearrangement unit that rearranges the read-out defects in an order corresponding to a path that goes through each of the read-out defects exactly once; and a stage-movement-path generation unit that selects the chip where the reference image corresponding to each defect is to be taken and generates a stage-movement path by determining stage-movement positions for the first and second imaging units.

MASK INSPECTION APPARATUS AND MASK INSPECTION METHOD

In a mask inspection apparatus, a defect detection unit includes a first memory region, a second memory region, an inspection condition reconfiguring unit, and a comparison unit. The inspection condition reconfiguring unit obtains a difference between gray scales of an optical image stored in the second memory region and a reference image stored in the first memory region. The existence of the defect is determined in the case where the difference is larger than a first threshold value. Further in the case where the number of defects is larger than a second threshold value, an inspection condition is re-estimated and configured and the reference image is regenerated. A comparison unit compares the stored reference image with the stored optical image in the case where the inspection condition is not reconfigured, and compares the regenerated reference image with the stored optical image in the case where the inspection condition is reconfigured.

AUGMENTED AUTOMATIC DEFECT CLASSIFICATION

A method for managing defects for an augmented automatic defect classification (ADC) process is disclosed. The method includes receiving a defect record based on an inspection of a target specimen; extracting, from a design database, relevant design data associated with a patch surrounding a location of a defect from the defect record; performing, by a processor, lithographic simulation on the relevant design data associated with the patch to determine a context patch; comparing, by the processor, the context patch with an image of the defect from the defect record to determine whether there exists a match between the context patch and the image of the defect; and defining the defect as a systematic defect based on a determination that there exists a match between the context patch and the image of the defect. 1. A method for managing defects for an augmented automatic defect classification (ADC) process , comprising:receiving a defect record based on an inspection of a target specimen;extracting, from a design database, relevant design data associated with a patch surrounding a location of a defect from the defect record;performing, by a processor, lithographic simulation on the relevant design data associated with the patch to determine a context patch;comparing, by the processor, the context patch with an image of the defect from the defect record to determine whether there exists a match between the context patch and the image of the defect; anddefining the defect as a systematic defect based on a determination that there exists a match between the context patch and the image of the defect.2. The method of claim 1 , further comprising:defining the defect as a non-systematic defect based on a determination that there does not exist a match between the context patch and the image of the defect.3. The method of claim 1 , further comprising sorting the defect into a defect group selected from a plurality of defect groups based on similarity of the image of the ...

SAMPLE OBSERVATION METHOD AND SAMPLE OBSERVATION DEVICE

An inspection method uses a charged particle microscope to observe a sample and view a defect site or a circuit pattern. A plurality of images is detected by a plurality of detectors and a mixed image is generated by automatically adjusting and mixing weighting factors required when the plurality of images are synthesized with each other. The sample is irradiated and scanned with a charged particle beam so that the plurality of detectors arranged at different positions from the sample detects a secondary electron or a reflected electron generated from the sample. The mixed image is generated by mixing the plurality of images of the sample with each other for each of the plurality of detectors, which are obtained by causing each of the plurality of detectors arranged at the different positions to detect the secondary electron or the reflected electron. The generated mixed image is displayed on a screen. 1. A sample observation method for observing a sample by using a charged particle microscope , the method comprising:causing a plurality of detectors arranged at different positions from the sample to detect a secondary electron or a reflected electron generated from the sample by irradiating and scanning the sample with a charged particle beam;generating a mixed image by mixing a plurality of images of the sample with each other for each of the plurality of detectors, which are obtained in such a way that each of the plurality of detectors arranged at the different positions detects the secondary electron or the reflected electron; andoutputting the generated mixed image.2. The sample observation method according to claim 1 ,wherein the mixed image is generated by mixing the plurality of images of the sample for each of the plurality of detectors, which are obtained in such a way that each of the plurality of detectors arranged at the different positions detects the secondary electron or the reflected electron, so as to output an image whose visibility of a defect ...

TOOL HEALTH MONITORING AND MATCHING

Systems and methods for tool health monitoring and matching through integrated real-time data collection, event prioritization, and automated determination of matched states through image analysis are disclosed. Data from the semiconductor production tools can be received in real-time. A control limit impact (CLI) of the parametric data and the defect attributes data can be determined and causation factors can be prioritized. Image analysis techniques can compare images and can be used to judge tool matching, such as by identifying one of the states at which the two or more of the semiconductor manufacturing tools match. 1. A system comprising:an interface in electronic communication with a plurality of semiconductor manufacturing tools; and a control limit impact (CLI) module that is configured to send an alert if a CLI of the parametric data and the defect attributes data is above a specification;', 'a defects count identification module that is configured to identify a relationship between a defects count and the parametric data;', 'a defect attributes identification module that is configured to identify a relationship between at least one trend of the defect attributes data and the parametric data;', 'a prioritization module that is configured to prioritize causation factors;', 'a collection module that collects data at different states from the parametric data for two or more of the semiconductor manufacturing tools; and', 'an image analysis module that is configured to identify one of the states at which the two or more of the semiconductor manufacturing tools match., 'a process control unit in electronic communication with the interface, wherein the process control unit is configured to receive production data from the plurality of semiconductor manufacturing tools, wherein the production data include measurements of one or more semiconductor wafers manufactured using the semiconductor manufacturing tools, wherein the production data include parametric data ...

USER INTERFACE AND MAINTENANCE GUIDANCE METHOD

Disclosed is a user interface including an operation screen on which prescribed information of an apparatus is displayed and which is used for predetermined operation, and an operation section which performs an operation of the operation screen. The operation screen includes a maintenance mode for performing maintenance for the apparatus. In the maintenance mode, a maintenance screen corresponding to the predetermined maintenance item among a plurality of maintenance items of which maintenance operations are stored in the storage unit is displayed on the operation screen. In the maintenance screen the contents of maintenance of the relevant maintenance item is displayed as the screen for each procedure based on the information of the storage unit In each screen for each procedure, an image illustrating the description of the procedure and the maintenance location is displayed. 1. A user interface comprising:an operation screen on which prescribed information of an apparatus is displayed and which is used for a predetermined operation; andan operation section on which an operation of the operation screen is performed,wherein the operation screen includes a maintenance mode for performing maintenance for the apparatus,in the maintenance mode, a maintenance screen corresponding to a predetermined maintenance item among a plurality of maintenance items of which maintenance operations are stored in a storage unit is displayed on the operation screen, andin the maintenance screen, contents of maintenance of a relevant maintenance item is displayed as a screen for each procedure based on information of the storage unit, and in the corresponding screen for each procedure, an image showing description of the procedure and the maintenance location is displayed.2. The user interface of claim 1 , wherein the image is a photographed image or a 3D-CAD image of the maintenance location.3. The user interface of claim 1 , wherein a maintenance operation is displayed in the image.4. ...

SUBSTRATE POSITION ADJUSTMENT METHOD, STORAGE MEDIUM AND SUBSTRATE TREATMENT SYSTEM

The method includes a step of executing a rotation treatment in a rotation treatment apparatus; a step of imaging a substrate on which the rotation treatment has been executed, in an inspection apparatus; a step of acquiring change amount information stored in advance, being information on an amount of change in orientation of the substrate while the substrate is moved from the rotation treatment apparatus to the inspection apparatus; a step of acquiring, as an execution result information, information on an execution result of the rotation treatment along a circumferential direction of the substrate, based on an imaging result in the inspection apparatus; and a step of correcting a position of the substrate at a time of the rotation treatment, based on the change amount information and the execution result information. 1. A substrate position adjustment method for adjusting a position of a substrate at a time of a rotation treatment in a substrate treatment system comprising a rotation treatment apparatus configured to execute the rotation treatment , the rotation treatment being a predetermined treatment performed on the substrate while rotating the substrate ,the substrate treatment system comprising an inspection apparatus configured to image a front surface of the substrate for inspection of the substrate,the substrate position adjustment method comprising:a rotation treatment step of executing the rotation treatment in the rotation treatment apparatus;an imaging step of imaging the substrate on which the rotation treatment has been executed, in the inspection apparatus;a change amount information acquisition step of acquiring change amount information stored in advance, being information on an amount of change in orientation of the substrate while the substrate is moved from the rotation treatment apparatus to the inspection apparatus;a result information acquisition step of acquiring, as an execution result information, information on an execution result of ...

WAFER SINGULATION PROCESS CONTROL

A method for monitoring and controlling a substrate singulation process is described. Device edges are imaged and identified for analysis. Discrepancies in device edges are noted and used to modify a singulation process and to monitor the operation of singulation processes for anomalous behavior. 1. An improved singulation process comprising:separating at least a portion of a contiguous substrate into at least a first IC device and a second IC device, the first and the second IC devices having adjoining edges;capturing at least one image of each of the adjoining edges of the first and second IC devices;establishing a profile of each of the adjoining edges of the first and second IC devices;overlaying the profiles of the adjoining edges;identifying discrepant portions of the adjoining edges from the overlaid profiles of the adjoining edges, if any; and,modifying the separating step and/or an apparatus for carrying out the separating step to reduce the likelihood that the separating step will result in a discrepant portion of subsequently formed adjoining edges of at least another first IC device and another second IC device.2. The improved singulation process of where in the identifying step further comprises determining whether a gap between the profiles of the adjoining edges is one of a chip and a delamination.3. The improved singulation process of wherein a chip is determined by identifying a gap between the profiles of the adjoining edges.4. The improved singulation process of wherein a delamination is determined by identifying an overlap between the profiles of the adjoining edges.5. A method of characterizing a singulation process comprising:identifying a profile of a predetermined portion of a peripheral edge of a first IC device that has been separated from a substrate;identifying a profile of a predetermined portion of a peripheral edge of a second IC device that has been separated from the substrate, the predetermined portion of the peripheral edge of the ...

PATTERN GROUPING METHOD BASED ON MACHINE LEARNING

A pattern grouping method may include receiving an image of a first pattern, generating a first fixed-dimensional feature vector using trained model parameters applying to the received image, and assigning the first fixed-dimensional feature vector a first bucket ID. The method may further include creating a new bucket ID for the first fixed-dimensional feature vector in response to determining that the first pattern does not belong to one of a plurality of buckets corresponding to defect patterns, or mapping the first fixed-dimensional feature vector to the first bucket ID in response to determining that the first pattern belongs to one of a plurality of buckets corresponding to defect patterns. 1. A method for group mapping , comprising:receiving an image of a first pattern;generating a first fixed-dimensional feature vector using trained model parameters, the model parameters being based on the received image; andassigning the first fixed-dimensional feature vector a first bucket identity (ID).2. The method of claim 1 , wherein assigning the first fixed-dimensional feature vector the first bucket ID further comprises:creating a new bucket ID for the first fixed-dimensional feature vector in response to a determination that the first pattern does not belong to one of a plurality of buckets corresponding to defect patterns.3. The method of claim 1 , wherein assigning the first fixed-dimensional feature vector the first bucket ID further comprises:mapping the first fixed-dimensional feature vector to the first bucket ID in response to a determination that the first pattern belongs to one of a plurality of buckets corresponding to defect patterns.4. The method of claim 2 , wherein the defect patterns comprise GDS information associated with defects.5. The method of claim 4 , wherein the defect patterns comprise information derived from the GDS information that includes number of sides claim 4 , number of angles claim 4 , dimension claim 4 , shape claim 4 , or a ...

OPTICAL VERIFICATION SYSTEM AND METHODS OF VERIFYING MICRO DEVICE TRANSFER

An optical verification method and mass transfer system described. In an embodiments, a mass transfer sequence may be accompanied by optical imaging and inspection to detect pick and place errors. The optical imaging and inspection techniques may be performed in-situ. 1. A mass transfer system comprising:a motion system that is translatable along a translation track between a donor substrate stage and a receiving substrate stage;an encoder secured to the motion system; and an illumination system to illuminate the motion system;', 'an inspection camera;', 'an optical imaging system to relay optical energy reflected from the motion system to the inspection camera; and', 'a frame grabber., 'an image capture system including2. The mass transfer system of claim 1 , wherein the motion system includes a transfer head assembly.3. The mass transfer system of claim 2 , wherein the encoder is located on the transfer head assembly.4. The mass transfer system of claim 3 , wherein the motion system further comprises a stage claim 3 , wherein the transfer head assembly is secured to the stage and encoder is located on the stage.5. The mass transfer system of claim 2 , further comprising a micro pick up array (MPA) secured to the transfer head assembly claim 2 , wherein the MPA includes an array of transfer heads.6. The mass transfer system of claim 5 , wherein the MPA includes the encoder adjacent to the array of transfer heads.7. The mass transfer system of claim 6 , wherein the encoder is located adjacent a leading side of the MPA as the motion system is translated over the image capture system toward the receiving substrate stage such that the encoder passes over the image capture system prior to the array of transfer heads.8. The mass transfer system of claim 7 , further comprising a second encoder located at a trailing side of the MPA as the motion system is translated over the image capture system toward the receiving substrate stage such that the encoder passes over the ...

OVERLAY METROLOGY METHOD AND OVERLAY CONTROL METHOD AND SYSTEM

The present disclosure provides an overlay metrology method, an overlay control method and an overlay control system. The overlay metrology method includes capturing a current layer image of a current overlay mark on a current layer with a current focal length and capturing a previous layer image of a previous overlay mark on a previous layer with a previous focal length. Then, the overlay metrology method further includes combining the current layer image with the previous layer image to form an overlay mark image and determining an overlay error between the current overlay mark and the previous overlay mark based on the overlay mark image. 1. An overlay metrology method , comprising:capturing a current layer image of a current overlay mark on a current layer with a current focal length;capturing a previous layer image of a previous overlay mark on a previous layer with a previous focal length;combining the current layer image with the previous layer image to form an overlay mark image; anddetermining an overlay error between the current overlay mark and the previous overlay mark based on the overlay mark image.2. The overlay metrology method of claim 1 , further comprising:measuring a thickness of the previous layer; anddetermining the previous focal length based on at least the thickness of the previous layer.3. The overlay metrology method of claim 1 , further comprising:measuring a dielectric constant of the previous layer; anddetermining the previous focal length based on at least the dielectric constant of the previous layer.4. The overlay metrology method of claim 1 , further comprising:measuring a refractive index of the previous layer; anddetermining the previous focal length based on at least the refractive index of the previous layer.5. The overlay metrology method of claim 1 , further comprising:measuring a thickness of a dielectric layer adjacent to the previous layer; anddetermining the previous focal length based on at least the thickness of the ...

INKJET PRINTING SYSTEM AND METHOD FOR PROCESSING SUBSTRATES

Inkjet printing system for processing substrates including a chuck for placement of a substrate and an inkjet printing head with at least one nozzle. Each chuck has chuck reference marks, each of which is associated with an associated camera. An electronic controller assembly is configured to take a set of images each instance a substrate having substrate reference marks has been placed on a chuck, with each image containing a chuck reference mark and a substrate reference mark. For each image, the position of the chuck relative to the camera and the position of the substrate relative to the camera is determined. Subsequently, the substrate position relative to the chuck is calculated and based thereon the firing of the at least one nozzle is timed and the movement of the printing motion assembly is controlled so that the liquid drops are accurately positioned on the substrate. 2. The inkjet printing system according to claim 1 , wherein at least one of the chuck reference marks has a shape that defines a length and a direction claim 1 , wherein the size of the shape is such that a plurality of pixels of an associated camera is involved for forming a representation of said chuck reference mark in the image.3. The inkjet printing system according to claim 1 , wherein the first threshold value is 5 micrometer or less.4. The inkjet printing system according to claim 1 , wherein the second threshold value is 50 micrometer or less.5. The inkjet printing system according to claim 1 , wherein the system is configured for processing rectangular substrates having four substrate edge parts of which two substrate edge parts are parallel and extend in a first direction and of which two other substrate edge parts are parallel and extend in a second direction claim 1 , wherein the first and the second direction are substantially orthogonal claim 1 , wherein the placement area is substantially rectangular and bounded by four boundary lines which extend parallel to the substrate ...

X-RAY BASED MEASUREMENTS IN PATTERNED STRUCTURE

A method and system are presented for use in X-ray based measurements on patterned structures. The method comprises: processing data indicative of measured signals corresponding to detected radiation response of a patterned structure to incident X-ray radiation, and subtracting from said data an effective measured signals substantially free of background noise, said effective measured signals being formed of radiation components of reflected diffraction orders such that model based interpretation of the effective measured signals enables determination of one or more parameters of the patterned structure, wherein said processing comprises: analyzing the measured signals and extracting therefrom a background signal corresponding to the background noise; and applying a filtering procedure to the measured signals to subtract therefrom signal corresponding to the background signal, resulting in the effective measured signal. 1. A method for use in X-ray based measurements on patterned structures , the method being carried out by a computer system and comprising:processing, by a processor utility of the computer system, data indicative of measured signals corresponding to a detected radiation response of a patterned structure to incident X-ray radiation, wherein the processing comprising image processing of measured signals indicative of a) an angular span of diffraction orders that were scattered from the patterned structure, and (b) background signals; andapplying a filtering procedure to the measured signals, the applying comprises subtracting from measured signals within the angular span, the background signals to provide effective measured signals that are substantially free of the background signals.2. A measurement system for use in X-ray based measurements on patterned structures , the system comprising:an illumination unit configured and operable to define an illumination channel for directing illuminating X-Ray radiation onto a measurement plane for interacting ...

IMAGE PROCESSING SYSTEM

Provided is an image processing system capable of estimating a three-dimensional shape of a semiconductor pattern or a particle by solving problems of measurement reduction in a height direction and taking an enormous amount of time at a time of acquiring learning data. The image processing system according to the disclosure stores a detectable range of a detector provided in a charged particle beam device in a storage device in advance, generates a simulated image of a three-dimensional shape pattern using the detectable range, and learns a relationship between the simulated image and the three-dimensional shape pattern in advance. 1. An image processing system that estimates a three-dimensional shape of a sample based on a measurement image of the sample acquired by a charged particle beam device , the image processing system comprising:a storage unit that stores a detectable range of a detector detecting secondary particles generated from the sample when the charged particle beam device irradiates the sample with a charged particle beam;a calculation unit that outputs a simulated image obtained by simulating images of one or more three-dimensional shape patterns acquired by the charged particle beam device in accordance with the detectable range;a learner that learns a relationship between the one or more three-dimensional shape patterns and the simulated image; andan output unit that outputs a three-dimensional shape of the sample obtained from the learner by inputting the measurement image to the learner.2. The image processing system according to claim 1 , whereinthe calculation unit is configured to estimate the detectable range using an image of a calibration pattern having a known three-dimensional shape,the image processing system further comprises an interface that allows the calibration pattern to be input,the interface is configured to select, as the calibration pattern, at least one of: any one of lists listing predetermined shape patterns; a shape ...

DETERMINING COORDINATES FOR AN AREA OF INTEREST ON A SPECIMEN

Methods and systems for determining coordinates for an area of interest on a specimen are provided. One system includes one or more computer subsystems configured for, for an area of interest on a specimen being inspected, identifying one or more targets located closest to the area of interest. The computer subsystem(s) are also configured for aligning one or more images for the one or more targets to a reference for the specimen. The image(s) for the target(s) and an image for the area of interest are acquired by an inspection subsystem during inspection of the specimen. The computer subsystem(s) are further configured for determining an offset between the image(s) for the target(s) and the reference based on results of the aligning and determining modified coordinates of the area of interest based on the offset and coordinates of the area of interest reported by the inspection subsystem. 1. A system configured to determine coordinates for an area of interest on a specimen , comprising:an inspection subsystem comprising at least an energy source and a detector, wherein the inspection subsystem is configured to scan energy generated by the energy source over specimens while the detector detects energy from the specimens and generates images responsive to the detected energy; and for an area of interest on another specimen being inspected, identifying one or more targets located closest to the area of interest;', 'determining an offset between the one or more images for the one or more targets and the reference based on results of said aligning; and', 'aligning one or more images for the one or more targets to a reference for the other specimen, wherein the one or more images for the one or more targets and an image for the area of interest are acquired by the inspection subsystem during inspection of the other specimen, 'determining modified coordinates of the area of interest based on the offset and coordinates of the area of interest reported by the inspection ...

Detecting Defects on a Wafer Using Defect-Specific and Multi-Channel Information

Methods and systems for detecting defects on a wafer using defect-specific and multi-channel information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest (POI) formed on the wafer and a known defect of interest (DOI) occurring proximate to or in the POI. The method also includes detecting the known DOI in target candidates by identifying potential DOI locations based on images of the target candidates acquired by a first channel of an inspection system and applying one or more detection parameters to images of the potential DOI locations acquired by a second channel of the inspection system. Therefore, the image(s) used for locating potential DOI locations and the image(s) used for detecting defects can be different. 1. A system configured to detect defects on a wafer , comprising:an inspection subsystem configured to acquire information for a target on a wafer, wherein the inspection subsystem comprises at least first and second channels, wherein the target comprises a pattern of interest formed on the wafer and a known defect of interest occurring proximate to or in the pattern of interest, and wherein the information comprises a first image of the pattern of interest on the wafer acquired by imaging the pattern of interest on the wafer with the first channel of the inspection subsystem and a second image of the known defect of interest on the wafer acquired by imaging the known defect of interest with the second channel of the inspection subsystem;wherein the inspection subsystem is further configured to search for target candidates in one die on the wafer or on another wafer, wherein the target candidates comprise the pattern of interest; anda computer system configured to detect the known defect of interest in the target candidates by identifying potential defect of interest locations based on images of the target candidates acquired by the first channel and applying one or more detection ...

ANALYSIS METHOD AND ANALYSIS SYSTEM OF VOLTAGE CONTRAST DEFECT

A voltage contrast defect analysis method including the following steps is provided. A voltage contrast defect detection is performed on a die to be tested by using an electron beam inspection machine to find out a defect address of a voltage contrast defect. A first scanning electron microscope image at the defect address of the die to be tested is obtained by using a scanning electron microscope. A first critical dimension of the first scanning electron microscope image at the defect address of the die to be tested is measured. The first critical dimension on the die to be tested is compared with a corresponding second critical dimension on a reference die where no voltage contrast defect occurs at the defect address to determine whether the first critical dimension and the second critical dimension are the same. 1. A voltage contrast defect analysis method , comprising:performing a voltage contrast defect detection on a die to be tested by using an electron beam inspection machine to find out a defect address of a voltage contrast defect;obtaining a first scanning electron microscope image at the defect address of the die to be tested by using a scanning electron microscope;measuring a first critical dimension of the first scanning electron microscope image at the defect address of the die to be tested; andcomparing the first critical dimension on the die to be tested with a corresponding second critical dimension on a reference die where no voltage contrast defect occurs at the defect address to determine whether the first critical dimension and the second critical dimension are the same.2. The voltage contrast defect analysis method according to claim 1 , wherein the die to be tested and the reference die are derived from the same wafer.35100. The voltage contrast defect analysis method according to claim 1 , wherein an inspection coverage of the voltage contrast defect detection is % to % of a device region to be tested on the die to be tested.4. The voltage ...

3D STRUCTURE INSPECTION OR METROLOGY USING DEEP LEARNING

Methods and systems for determining information for a specimen are provided. Certain embodiments relate to bump height 3D inspection and metrology using deep learning artificial intelligence. For example, one embodiment includes a deep learning (DL) model configured for predicting height of one or more 3D structures formed on a specimen based on one or more images of the specimen generated by an imaging subsystem. One or more computer systems are configured for determining information for the specimen based on the predicted height. Determining the information may include, for example, determining if any of the 3D structures are defective based on the predicted height. In another example, the information determined for the specimen may include an average height metric for the one or more 3D structures. 1. A system configured to determine information for a specimen , comprising:an imaging subsystem configured to generate images of a specimen, wherein one or more three-dimensional structures are formed on the specimen;one or more computer systems; andone or more components executed by the one or more computer systems, wherein the one or more components comprise a deep learning model configured for predicting a height of the one or more three-dimensional structures based on one or more of the images; andwherein the one or more computer systems are configured for determining information for the specimen based on the predicted height of the one or more three-dimensional structures.2. The system of claim 1 , wherein the one or more three-dimensional structures are one or more bumps formed on a wafer.3. The system of claim 1 , wherein determining the information comprises determining if any of the one or more three-dimensional structures are defective.4. The system of claim 1 , wherein the information comprises an average height metric for the one or more three-dimensional structures.5. The system of claim 1 , wherein the one or more of the images used for predicting the ...

METHOD FOR MEASURING OVERLAY AND MEASURING APPARATUS, SCANNING ELECTRON MICROSCOPE, AND GUI

A method for measuring overlay at a semiconductor device on which circuit patterns are formed by a plurality of exposure processes is characterized in including an image capturing step for capturing images of a plurality of areas of the semiconductor device, a reference image setting step for setting a reference image based on a plurality of the images captured in the image capturing step, a difference quantifying step for quantifying a difference between the reference image set in the reference image setting step and the plurality of images captured in the image capturing step, and an overlay calculating step for calculating the overlay based on the difference quantified in the difference quantifying step. 115-. (canceled)16. A method for measuring overlay at a semiconductor device on which circuit patterns are formed by a plurality of exposure processes , comprising:an image capturing step for capturing a plurality of images of areas in the semiconductor device;a reference image setting step for setting a reference image on the basis of the plurality of images captured in the image capturing step;a difference quantifying step for quantifying a difference between the reference image set in the reference image setting step and the plurality of images captured in the image capturing step; andan overlay calculating step for calculating the overlay on the basis of the difference quantified in the difference quantifying step.17. The method according to claim 16 , whereinin the difference quantifying step, a positional deviation amount of each of the circuit patterns between the reference image and the plurality of images is quantified for each of the circuit patterns formed by each of the plurality of exposure processes, andin the overlay calculating step, the positional deviation amount is calculated for each of the circuit patterns formed by each of the plurality of exposure processes.18. The method according to claim 16 , further comprising a circuit pattern ...

METHODS OF DETECTING FAULTS IN REAL-TIME FOR SEMICONDUCTOR WAFERS

Systems for and methods of detecting faults in semiconductor wafers are provided. One method includes, for instance: monitoring, with at least one sensor, a recipe for manufacturing a semiconductor wafer; tracking, with a fault detection system, a set of steps for the recipe; determining a start of a step; sensing a set of data related to at least one parameter of the step; generating, by an imaging system, an image of the set of data; displaying, on a display, the image of the set of data; calculating, by the fault detection system, a pixel area ratio from the image of the set of data; determining if a fault exists in the wafer based upon the pixel area ratio; and displaying, on the display, an indication of the fault during real-time and at an end of the step. 1. A method of detecting faults in a semiconductor wafer , the method comprising:monitoring, with at least one sensor, a recipe for manufacturing a semiconductor wafer;tracking, with a fault detection system, a set of steps for the recipe;determining, by the fault detection system, a start of a step;sensing, by the at least one sensor, a set of data related to at least one parameter of the step;generating, by an imaging system, an image of the set of data;displaying, on a display, the image of the set of data;calculating, by the fault detection system, a pixel area ratio from the image of the set of data;determining if a fault exists in the wafer, by the fault detection system, based upon the pixel area ratio; anddisplaying, on the display, an indication of the fault at an end of the step.2. The method of claim 1 , wherein the sensing comprises a real-time sensing.3. The method of claim 2 , wherein the sensing is continuous.4. The method of claim 3 , wherein the pixel area ratio comprises a comparison of a pre-pixel area of the image to a post-pixel area of the image for a duration of the step.5. The method of claim 1 , wherein the step includes reactive ion etching.6. The method of claim 1 , wherein the ...

Defect Detection Device and Production System

Provided is a defect detection device capable of measuring the volume of surface defects. The defect detection device includes: an imaging device configured to image an image of an inspection object; a binarization processing unit configured to subject the image to first and second binarization processing by use of different first and second binarization thresholds, so as to calculate first and second sizes for an identical defect in the image; a ratio calculation unit configured to calculate a first ratio of the second size to the first size; and a depth determination unit configured to determine a depth of the defect depending on the first ratio. 1. A defect detection device comprising:a camera configured to image an image of an inspection object;a binarization processor configured to subject the image to first and second binarization processing by use of different first and second binarization thresholds, so as to calculate first and second sizes for an identical defect in the image;a ratio calculation processor configured to calculate a first ratio of the second size to the first size; anda depth determination processor configured to determine a depth of the defect depending on the first ratio.2. The defect detection device according to claim 1 , further comprising:a volume calculation processor configured to calculate a volume of the defect depending on the depth of the defect determined, and calculate a sum of volumes of all defects in the image; anda quality determination processor configured to determine whether the inspection object is fine or inferior according to the sum of the volumes of the all defects.3. The defect detection device according to claim 1 , wherein:the binarization processing processor subjects the image to third binarization processing by use of a third binarization threshold different from the first and second binarization thresholds, so as to calculate a third size for the identical defect in the image;the ratio calculation processor ...

PATTERN DEFECT DETECTION METHOD

A pattern defect detection method capable of detecting a pattern defect of a semiconductor integrated circuit with higher accuracy is disclosed. The pattern defect detection method includes: extracting an image of an inspection target pattern from an image of a specimen; identifying a reference pattern from design data, the reference pattern having the same shape and the same position as those of the inspection target pattern; calculating a brightness index value indicating a brightness of an entirety of the inspection target pattern; repeating said extracting an inspection target pattern, said identifying a reference pattern, and said calculating a brightness index value, thereby building mass data containing brightness index values of inspection target patterns and corresponding reference patterns; determining a standard range of brightness index value based on the brightness index values contained in the mass data; and detecting a defect of the inspection target pattern based on whether or not the calculated brightness index value is within the standard range. 1. A pattern defect detection method comprising:generating an image of a specimen with a scanning electron microscope;extracting an image of an inspection target pattern from the image of the specimen;identifying a reference pattern from design data, the reference pattern having the same shape and the same position as those of the inspection target pattern;calculating a brightness index value indicating a brightness of an entirety of the inspection target pattern;repeating said extracting an inspection target pattern, said identifying a reference pattern, and said calculating a brightness index value, thereby building mass data containing brightness index values of inspection target patterns and corresponding reference patterns;determining a standard range of brightness index value based on the brightness index values contained in the mass data; anddetecting a defect of the inspection target pattern based ...

SYSTEMS, APPARATUS AND METHODS FOR FORMING METAL STRIPS INTO DIES

A system for forming a metal strip into a die having a predetermined shape through a series of forming operations is described herein. The system includes a base configured to support the metal strip as the metal strip undergoes the series of forming operations; a feeding device configured to advance the metal strip between each forming operation of the series of forming operations and grip the metal strip during each forming operation; a bending device configured to bend a portion of the metal strip extending from the feeding device as one of the series of forming operations; a forming head configured to house a pair of forming tools and provide features to the portion of the metal strip extending from the feeding device as one of the series of forming operations using the one or more forming tools; a robotic arm configured to selectively provide the one or more forming tools to the forming head; and a computing unit in communication with the robotic arm and configured to transmit a control signal to cause the robotic arm to retrieve the pair of forming tools and provide the pair of forming tools to the forming head. 1. A system for forming a metal strip into a die having a predetermined shape through a series of forming operations , the system comprising:a base configured to support the metal strip as the metal strip undergoes the series of forming operations;a feeding device coupled to the base and configured to advance the metal strip between each forming operation of the series of forming operations and grip the metal strip during each forming operation;a bending device coupled to the base adjacent to the feeding device, the bending device configured to bend a portion of the metal strip extending from the feeding device as one of the series of forming operations;a forming head coupled to the base, the forming head configured to house a pair of forming tools and provide features to the portion of the metal strip extending from the feeding device as one of the ...

SYSTEM AND METHOD FOR ADJUSTING BRIGHTNESS OF LIGHT SOURCE OF CRITICAL DIMENSION MEASURING DEVICE

The present disclosure provides a system and a method for adjusting brightness of a light source of a critical dimension measuring device. The system for adjusting brightness of the light source comprises: a calibration mark unit which is formed on a display panel by photolithography and is provided with a plurality of marks; a mark pattern acquiring unit which is configured to acquire patterns of the plurality of marks; a mark data collecting unit which is configured to obtain actual line widths and actual line spaces of the plurality of marks based on the patterns of the plurality of marks, and to calculate a ratio of a sum of an average value of the actual line width and an average value of the actual line space to a sum of a predefined line width and a predefined line space; a mark data determining unit which is configured to determine whether the ratio is within a predefined range; and a unit for automatically adjusting brightness of light source which is configured to generate a brightness adjusting signal of the light source to adjust a driving voltage of the light source if the mark data determining unit determines that the ratio is outside of the predefined range. The accuracy of the critical dimension measuring is improved by properly adjusting the brightness of the light source. 1. A system for adjusting brightness of a light source of a critical dimension measuring device , which comprises:a calibration mark unit which is formed on a display panel by photolithography and is provided with a plurality of marks;a mark pattern acquiring unit which is configured to acquire patterns of the plurality of marks;a mark data collecting unit which is configured to obtain actual line widths and actual line spaces of the plurality of marks based on the patterns of the plurality of marks, and to calculate a ratio of a sum of an average value of the actual line width and an average value of the actual line space to a sum of a predefined line width and a predefined line ...

METHOD FOR RECONSTRUCTING AN IMAGE

A method for constructing an image includes: defining a foreground area associated with an object in an original image; identifying a plurality of contour points defining a contour of the object; for each of the contour points, obtaining a reference contour point set that includes at least one reference contour point on each of two sides of the contour point; obtaining a plurality of characteristic lines, each associated with the reference contour point set and defined by an end point obtained from the contour points; and aligning the end points on one side to form a straight edge and making the characteristic lines adjoin each other side by side, so as to construct a reconstructed image. 1. A method for constructing an image , the method to be implemented using a processor of an electronic device and comprising steps of:a) obtaining an original image;b) defining a foreground area that is associated with an object in the original image;c) identifying a plurality of contour points that define a contour of the object;d) for each of the plurality of contour points, obtaining a reference contour point set that includes, on each of two sides of the contour points, at least one reference contour point which is another one of the plurality of contour points;e) obtaining a plurality of characteristic lines, each of the characteristic lines being defined by an end point obtained from the contour points, is associated with the corresponding reference contour point set, and has a pre-defined length and a predetermined width;f) obtaining, for each of the characteristic lines, a plurality of pixel value sets that correspond respectively with the a plurality of pixels on the original image that constitute the characteristic line; andg) rearranging the characteristic lines by aligning the end points on one side to form a straight edge and making the characteristic lines adjoin each other side by side, so as to construct a reconstructed image.2. The method of claim 1 , wherein step ...

AUTO QUALIFICATION DEVICE AND AUTO QUALIFICATION METHOD

An auto qualification device for a test target device includes a camera that generates device image data by capturing a device image of the test target device, a detector that marks a label at a target object within the device image of the test target device by using a detection learning model trained based on a detection training set of device image training data and label image training data corresponding to the device image training data, a region determiner that determines a qualification region within the device image of the test target device based on a position of the label, and a qualification determiner that determines whether the target object within the qualification region is defective by using a qualification learning model trained based on a qualification training set of qualification region image training data and a training qualification result for the qualification region image training data. 1. An auto qualification device for a test target device , the auto qualification device comprising:a camera that generates device image data by capturing a device image of the test target device;a detector that marks a label at a target object within the device image of the test target device by using a detection learning model trained based on a detection training set of device image training data and label image training data corresponding to the device image training data;a region determiner that determines a qualification region within the device image of the test target device based on a position of the label; anda qualification determiner that determines whether the target object within the qualification region is defective by using a qualification learning model trained based on a qualification training set of qualification region image training data and a training qualification result for the qualification region image training data.2. The auto qualification device of claim 1 , wherein a color of the label marked by the detector is different from a ...

DEEP LEARNING BASED DEFECT DETECTION

Methods and systems for detecting defects on a specimen are provided. One system includes one or more computer systems and one or more components executed by the one or more computer systems. The component(s) include a deep learning model configured for, for a location on a specimen, generating a gray scale simulated design data image from a high resolution image generated at the location by a high resolution imaging system. The computer system(s) are configured for generating a simulated binary design data image for the location from the gray scale simulated design data image. The computer system(s) are also configured for detecting defects at the location on the specimen by subtracting design data for the location from the simulated binary design data image. 1. A system configured to detect defects on a specimen , comprising:one or more computer systems; andone or more components executed by the one or more computer systems, wherein the one or more components comprise a deep learning model configured for, for a location on a specimen, generating a gray scale simulated design data image from a high resolution image generated at the location, andwherein the high resolution image is generated at the location by a high resolution imaging system;wherein the one or more computer systems are configured for generating a simulated binary design data image for the location from the gray scale simulated design data image; andwherein the one or more computer systems are further configured for detecting defects at the location on the specimen by subtracting design data for the location from the simulated binary design data image.2. The system of claim 1 , wherein the deep learning model is further configured as a generative adversarial network.3. The system of claim 1 , wherein the deep learning model is further configured to transfer artifacts of one or more defects in the high resolution image to the gray scale simulated design data image.4. The system of claim 1 , wherein ...

PATTERN INSPECTION APPARATUS AND PATTERN INSPECTION METHOD

According to one aspect of the present invention, a pattern inspection apparatus includes reference outline creation processing circuitry configured to create a reference outline of a reference figure pattern, which serves as a reference, by using pattern data of a design pattern that serves as a base of a figure pattern formed on a substrate; outline extraction processing circuitry configured to extract an outline of the figure pattern in the measurement image from the measurement image using, as starting points, a plurality of points that are positioned on the reference outline; and comparison processing circuitry configured to compare the reference outline with the outline of the figure pattern. 1. A pattern inspection apparatus comprising:a measurement image acquisition mechanism configured to acquire a measurement image, which is a secondary electron image or an optical image of a figure pattern, from a substrate on which the figure pattern is formed by using electron beams or laser beams;reference outline creation processing circuitry configured to create a reference outline of a reference figure pattern, which serves as a reference, by using pattern data of a design pattern that serves as a base of the figure pattern formed on the substrate;outline extraction processing circuitry configured to extract an outline of the figure pattern in the measurement image from the measurement image using, as starting points, a plurality of points that are positioned on the reference outline; andcomparison processing circuitry configured to compare the reference outline with the outline of the figure pattern.2. The apparatus according to claim 1 , further comprising:alignment processing circuitry configured to perform alignment of the reference outline and the outline of the figure pattern,wherein the comparison processing circuitry compares the reference outline subjected to the alignment and the outline of the figure pattern subjected to the alignment.3. The apparatus ...

Method of automatically focusing a charged particle beam on a surface region of a sample, method of calculating a converging set of sharpness values of images of a charged particle beam device and charged particle beam device for imaging a sample

A method of automatically focusing a charged particle beam on a surface region of a sample is provided. The method includes acquiring a plurality of images for a corresponding plurality of focusing strength values; calculating a plurality of sharpness values based on the plurality of images, the plurality of sharpness values are calculated with a sharpness function provided as a sum in a frequency space based on the plurality of images; and determining subsequent focusing strength values of the plurality of focusing strength values with a golden ratio search algorithm based one the calculated sharpness values.

INTERACTIVE AND ITERATIVE TRAINING OF A CLASSIFICATION ALGORITHM FOR CLASSIFYING ANOMALIES IN IMAGING DATASETS

A method includes detecting a plurality of anomalies in an imaging dataset of a wafer. The wafer includes a plurality of semiconductor structures. The method also includes executing multiple iterations. At least some of the iterations include determining a current classification of the plurality of anomalies using a machine-learned classification algorithm and tiles of the imaging dataset associated with the plurality of anomalies. The current classification includes a current set of classes into which the anomalies of the plurality of anomalies are binned. The method further includes, based on at least one decision criterion, selecting at least one anomaly of the plurality of anomalies for a presentation to a user. In addition, the method includes, based on an annotation of the at least one anomaly provided by the user with respect to the current classification, re-training the classification algorithm. 1. A method , comprising:detecting a plurality of anomalies in an imaging dataset of a wafer, the wafer comprising a plurality of semiconductor structures; and determining a current classification of the plurality of anomalies using a machine-learned classification algorithm and tiles of the imaging dataset associated with the plurality of anomalies, the current classification comprising a current set of classes into which the anomalies of the plurality of anomalies are binned;', 'based on at least one decision criterion, selecting at least one anomaly of the plurality of anomalies for presentation to a user; and', 'based on an annotation of the at least one anomaly provided by the user with respect to the current classification, re-training the classification algorithm., 'executing multiple iterations, at least some iterations of the multiple iterations comprising2. The method of claim 1 , wherein the at least one anomaly comprises multiple anomalies claim 1 , and the at least one decision criterion comprises a similarity measure between the multiple anomalies.3. ...

USING PHOTONIC EMISSION TO DEVELOP ELECTROMAGNETIC EMISSION MODELS

A method and apparatus related to developing electromagnetic emission and power models for a target device using photonic emissions thereof are provided. Data of photonic emissions of a target device during a first period of time with the target device in one or more modes is recorded. Data of electromagnetic emissions of the target device during the first period of time with the target device in the one or more modes is also recorded. The recorded data of the photonic emissions and the recorded data of the electromagnetic emissions are correlated to establish one or more electromagnetic emission models for the target device. The one or more electromagnetic emission models enable predictive analysis of emissions by the target device. 1. A method , comprising:measuring electromagnetic emissions of a target device in a second context; andidentifying an anomaly condition associated with the target device by comparing a result of the measuring to one or more electromagnetic emission models developed for the target device based on photonic emissions of the target device in a baseline context.2. The method of claim 1 , further comprising:developing the one or more electromagnetic emission models for the target device based on the photonic emissions of the target device in the baseline context by:recording data of the photonic emissions of the target device using Picosecond Imaging Circuit Analysis (PICA) during a first period of time with the target device in one or more modes;recording data of the electromagnetic emissions of the target device during the first period of time with the target device in the one or more modes; andcorrelating the recorded data of the photonic emissions and the recorded data of the electromagnetic emissions to establish the one or more electromagnetic emission models for the target device.3. The method of claim 2 , wherein the measuring of the electromagnetic emissions of the target device in the test context comprises recording data of the ...

METHOD OF DETECTING DEFECTS IN AN OBJECT

A method, system, and computer program product of detecting defects in an object using a processor operatively connected to a memory, the method comprising: accommodating in the memory an image group comprising a reference image and an image; generating a set of correction parameters to be applied to pixels of an image from the image group, wherein the parameters are determined to minimize a combination of a first factor indicative of variability of the set, and a second factor indicative of a difference between an image from the image group as enhanced by applying the set and another image in the image group, wherein the combination increases as any factor increases; applying the set to the image of the image group to obtain an enhanced image; generating an optimal difference image between the enhanced image and the other image; and using the optimal difference image for detecting defect candidates. 1. A method of detecting one or more defects in an object using a processor operatively connected to a memory , the method comprising:accommodating in the memory an image group comprising a reference image of the object and an image of the object;generating at least a first set of correction parameters to be applied to a plurality of pixels of an image from the image group, wherein correction parameters of the first set are determined so as to minimize a value of a combination of: a first factor indicative of variability of the first set of correction parameters, and a second factor indicative of a difference between an image from the image group as enhanced by applying the first set of correction parameters and another image in the image group, wherein the value increases as the first factor and/or the second factor increases;applying the first set of correction parameters to the image of the image group to obtain a first enhanced image;generating an optimal difference image between the first enhanced image and the another image from the image group; andusing the ...

Method of visualizing defect using design data and defect detection method

A method of visualizing a defect of a pattern constituting a semiconductor device with a high accuracy in a wide range is disclosed. The method of visualizing a defect, includes: generating pattern images with a scanning electron microscope; superimposing the pattern images while aligning positions of patterns in the pattern images; calculating a variance of gray level over the pattern images for each of inspection areas on the patterns; creating a false-color image by color-coding the inspection areas according to magnitude of the variance; and displaying the false-color image.

Image-Based Overlay Metrology and Monitoring Using Through-Focus Imaging

A metrology system includes a controller coupled to a detector to image a sample based on the light captured by an objective lens, where an object plane of the detector with respect to the sample is adjustable. The controller may direct the detector to generate reference images of an overlay target on the sample at multiple object planes including at least a first reference image at a first sample layer and a second reference image at a second sample layer. The controller may further determine a reference overlay between the first layer and the second layer at the overlay target based on the first reference image and the second reference image. The controller may further select a measurement object plane for single-image overlay determination that corresponds to the reference overlay within a selected tolerance. The controller may further determine overlay for additional overlay targets at the measurement plane.