07-01-2016 дата публикации
Номер: US20160005541A1
Принадлежит:
A stacked ceramic capacitor that includes a ceramic body formed by stacking dielectric ceramic layers and internal electrodes mainly composed of Ni; and an external electrode formed on an outer surface of ceramic body. The dielectric ceramic layers are formed by using a dielectric ceramic composition that includes a main ingredient expressed by (KNaLiM2)(NbTaMgM4)O, where M2 is at least one of Ca, Sr and Ba, M4 is at least one of Zr, Hf and Sn, and a, b, c, d, w, x, y, and z satisfy predetermined relationships; and includes 2 to 15 molar parts of Mn with respect to 100 molar parts of a total content of Nb, Ta, Mg, and M4. 1. A dielectric ceramic composition comprising:{'sub': a', 'b', 'c', 'd', 'w', 'x', 'y', 'z', '3, 'claim-text': M2 is at least one of Ca, Sr and Ba,', 'M4 is at least one of Zr, Hf and Sn,', 'w+x+y+z=1,', '0.07≦a≦0.92,', '0≦b≦0.81,', '0≦c≦0.09,', '0.57≦a+b+c≦0.95,', '0.1≦d≦0.4,', '0.95≦a+b+c+d≦1.05,', '0.73≦w+x≦0.93,', '0≦x/(w+x)≦0.3,', '0.02≦y≦0.07, and', '0.05≦z≦0.2; and, 'a main ingredient expressed by (KNaLiM2)(NbTaMgM4)O, where'}2 to 15 molar parts of Mn with respect to 100 molar parts of a total content of Nb, Ta, Mg, and M4.2. A stacked ceramic capacitor comprising:a ceramic body including a plurality of stacked dielectric ceramic layers and a plurality of internal electrodes comprising Ni along an interface between said dielectric ceramic layers; andan external electrode on an outer surface of said ceramic body, wherein{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'said dielectric ceramic layers comprise the dielectric ceramic composition as recited in .'}3. A method of forming a stacked ceramic capacitor , the method comprising:forming a plurality of ceramic green sheets from a dielectric ceramic composition;forming an internal electrode patterns comprising Ni on respective ceramic green sheets of the plurality of ceramic green sheets;stacking the plurality of ceramic green sheets such that the internal electrode patterns are at an ...
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