Plasma cvd apparatus

The disclosed plasma CVD apparatus ( 1 ) is provided with a vacuum chamber ( 3 ); a pair of deposition rollers ( 2, 2 ) disposed within the vacuum chamber ( 3 ) that are connected to both poles of an AC power supply and around which a substrate (W) is wound; a gas-supplying device ( 5 ) that supplies process gas containing a source gas to a deposition zone (D) which is a portion of or all of the region that is on one side of a line linking the centers of rotation of the pair of deposition rollers ( 2, 2 ); and a magnetic-field-generating device ( 7 ) that, by means of the AC power supply being applied to each of the deposition rollers ( 2, 2 ), forms a magnetic field that causes the source gas in a predetermined region to become plasma. The magnetic-field-generating device ( 7 ) causes the source gas in the region adjacent to the surface of the portion of the pair of deposition rollers ( 2, 2 ) located within the deposition zone (D) to become plasma, forming a plasma region (P). The substrate (W) is wound around the pair of deposition rollers ( 2, 2 ) so as to pass through the plasma region (P).

Method and device for plasma-treating workpieces

The method and device are used to plasma-treat workpieces. The workpiece is inserted into a chamber of a treatment station that can be at least partially evacuated. The plasma chamber is bounded by a chamber bottom, a chamber cover, and a lateral chamber wall. The method process is optically monitored at least at times. In the optical monitoring, spectral lines of the radiation of the plasma above 500 nanometers are evaluated. Preferably, the evaluation is performed for frequencies above 700 nanometers.

Electrostatic chuck and semiconductor/liquid crystal manufacturing equipment

An electrostatic chuck includes, a chuck function portion including a plurality of chuck regions on which an attractable object is placed respectively, and a concave surface portion provided in an outer region of the chuck regions, and electrodes arranged in an inner part of the chuck function portion corresponding to the chuck regions and an inner part of the chuck function portion corresponding to the concave surface portion, respectively.

Film deposition method and film deposition apparatus

A film deposition method including: a step of carrying a substrate into a vacuum chamber, and placing the substrate on a turntable; a step of rotating the turntable; and an adsorption-formation-irradiation step of supplying a first reaction gas to the substrate from a first reaction gas supply part to adsorb the first reaction gas on the substrate; supplying a second reaction gas from a second reaction gas supply part so that the first reaction gas adsorbed on the substrate reacts with the second reaction gas so as to form a reaction product on the substrate; and supplying a hydrogen containing gas to a plasma generation part that is separated from the first reaction gas supply part and the second reaction gas supply part in a circumferential direction of the turntable so as to generate plasma above the turntable and to irradiate the plasma to the reaction product.

Treatment-target modification device, treatment-target modification system, image forming system, and image forming method

A treatment-target modification device is configured to modify a treatment target being conveyed, with discharge. The treatment-target modification device includes: a hydrophilization unit configured to perform hydrophilization treatment on the treatment target ( 20 ; and a measurement unit configured to measure two-dimensional distribution of a reflectance spectrum of light reflected from the hydrophilization-treated treatment target.

Film forming apparatus

A film forming apparatus for forming a thin film on a flexible substrate. The film forming apparatus forms a thin film on a flexible substrate under vacuum. The film forming apparatus includes a first zone into which a first gas is introduced and a second zone into which a second gas is introduced in a vacuum chamber. Zone separators have openings through which the flexible substrate passes. The film forming apparatus includes a mechanism that reciprocates the flexible substrate between the zones. Further, the film forming apparatus includes a mechanism that supplies a raw material gas containing metal or silicon to the first zone, and a mechanism that performs sputtering of a material containing metal or silicon as a target material in the second zone.

GLASS PALLET FOR SPUTTERING SYSTEMS

Pallets for transporting one or more glass substrates in a substantially vertical orientation through a sputtering system. In some cases, a pallet comprising a frame with an aperture and an adjustable grid array within the aperture. The adjustable grid array is configurable to hold a plurality of glass substrates of different shapes and/or sizes. In one case, the adjustable grid array comprises a system of vertical and horizontal support bars, wherein the vertical support bars configured to both support the plurality of glass substrates at their vertical edges, wherein the horizontal support bars are configured to support the plurality of glass substrates at their horizontal edges, wherein the ends of the horizontal support bars are slideably engaged with the vertical support bars. 163-. (canceled)64. A pallet for transporting at least one rectangular glass substrate through a sputtering apparatus , the pallet comprising:a frame; andan aperture in the frame; andwherein the pallet is configured to hold the at least one glass substrate by at least two edges, and in a substantially vertical orientation during transport through the sputtering apparatus,wherein the at least one rectangular glass substrate has dimensions of between 60 inches and 130 inches along one side and between 72 inches and 205 inches along an other side, and wherein the at least one rectangular glass substrate has a thickness of between 2 mm and 20 mm.65. The pallet of claim 64 , further comprising an electrically conductive component configured to establish electrical communication with an electrically conductive coating on a work surface of the at least one rectangular glass substrate.66. The pallet of claim 65 , wherein the electrically conductive component comprises one or more springs.67. The pallet of claim 64 , wherein the pallet is configured to maintain its temperature to within +5° C. of the temperature of the at least one rectangular glass substrate during sputtering.68. The pallet of ...

Apparatus for coating substrates

An apparatus for coating substrates includes a vacuum chamber having an opening through which substrates can be received and a door configured to seal the opening; one or more targets arranged in the vacuum chamber; a cooling unit configured to cool the substrates and/or a heating unit configured to heat the substrates; rotating means configured to rotate substrates relative to the one or more targets, the cooling unit and/or the heating unit; and a lifting chamber that communicates with the interior of the vacuum chamber and is configured to receive the cooling unit and the heating unit. The vacuum chamber defines a lifting axis along which the cooling unit and/or the heating unit and the lifting chamber are arranged, and the apparatus further comprises displacement means configured to displace the cooling unit and/or the heating unit along the lifting axis and between the vacuum chamber and the lifting chamber.

Substrate Processing Apparatus and Substrate Processing Method

A substrate processing apparatus includes: a mounting stand provided with a substrate mounting region in which a workpiece substrate is mounted; a process vessel for defining a process chamber including a first region and a second region through which the substrate mounting region passes in order; a precursor gas supply unit for supplying a precursor gas to the first region; a process gas supply unit for supplying a first gas or a second gas differing from the first gas to the second region; at least one plasma generating unit for generating plasma of the first gas or the second gas in the second region; and a control unit for executing a repetition control of repeating a first operation for supplying the first gas to the second region for a first time and a second operation for supplying the second gas to the second region for a second time. 117-. (canceled)18. A substrate processing method implemented in a substrate processing apparatus which includes a mounting stand provided with a substrate mounting region in which a workpiece substrate is mounted , the mounting stand being installed so as to rotate about an axis such that the substrate mounting region is moved in a circumferential direction , and a process vessel configured to define a process chamber which accommodates the mounting stand therein , the process chamber including a first region and a second region through which the substrate mounting region moving about the axis in the circumferential direction upon rotation of the mounting stand passes in order , the method comprising:an adsorption process in which an adsorption layer is formed on a surface of the workpiece substrate by supplying a precursor gas to the first region;a reaction process in which the surface of the workpiece substrate is subjected to reaction by supplying a reaction gas to the second region and generating plasma of the reaction gas; anda modifying process in which the surface of the workpiece substrate is modified by supplying a ...

ROLL-TO-ROLL HYBRID PLASMA MODULAR COATING SYSTEM

The present invention relates to a roll-to-roll hybrid plasma modular coating system, which comprises: at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit, a metallic film and at least one substrate feeding unit. Each of the arc plasma processing unit is formed with a first chamber and an arc plasma source. Each of the magnetron sputtering plasma processing unit is formed with a second chamber and at least one magnetron sputtering plasma source. The metallic film is disposed in the arc plasma processing unit to avoid chamber wall being deposited by the arc plasma source; There are at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit and at least one winding/unwinding unit connected in series to lay at least one thin layer by arc plasma deposition or by magnetron sputtering plasma onto substrate material. 1. A roll-to-roll hybrid plasma modular coating system , comprising:at least one arc plasma processing unit, each formed with a first chamber and an arc plasma source for producing arc plasma that is housed inside the first chamber;at least one magnetron sputtering plasma processing unit, each formed with a second chamber and a magnetron sputtering plasma source for producing magnetron sputtering plasma that is housed inside the second chamber;a metallic film, disposed in the arc plasma processing unit to avoid deposition of target material on a wall in the deposition chamber; andat least one substrate feeding unit, for feeding a substrate, formed with a third chamber;whereas the at least one arc plasma processing unit, the at least one magnetron sputtering plasma processing unit and the at least one substrate feeding unit are connected in series to be used for depositing at least one thin layer by arc plasma deposition or at least one thin layer by magnetron sputtering plasma on a web substrate during the feeding of the web substrate.2. The roll-to-roll hybrid plasma modular ...

Heat-Transfer Roller for Sputtering and Method of Making the Same

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

REACTOR SYSTEM COUPLED TO AN ENERGY EMITTER CONTROL CIRCUIT

A microwave energy source that generates a microwave energy is disclosed. The microwave energy source has an on-state and an off-state. A control circuit is coupled to the microwave energy source and includes an output to generate a control signal that adjusts a pulse frequency of the microwave energy. A voltage generator applies a non-zero voltage to the microwave energy source during the off-state. A frequency and a duty cycle of the non-zero voltage is based on a frequency and a duty cycle of the control signal. A waveguide is coupled to the microwave energy source. The waveguide has a supply gas inlet that receives a supply gas, a reaction zone that generates a plasma, a process inlet that injects a raw material into the reaction zone, and an outlet that outputs a powder based on a mixture of the supply gas and the raw material within the plasma. 1. A reactor system comprising:a microwave energy source configured to generate a microwave energy, the microwave energy source having an on-state and an off-state;a control circuit coupled to the microwave energy source and including an output to generate a control signal configured to at least partially adjust a pulse frequency of the microwave energy;a voltage generator configured to apply a non-zero voltage to the microwave energy source during the off-state, wherein a frequency and a duty cycle of the non-zero voltage is based on a frequency and a duty cycle of the control signal; and a supply gas inlet configured to receive a supply gas;', 'a reaction zone configured to generate a plasma in response to excitation of the supply gas by the microwave energy;', 'a process inlet configured to inject a raw material into the reaction zone; and', 'an outlet configured to output a carbon-containing powder based on a mixture of the supply gas and portions of the raw material within the plasma., 'a field-enhancing waveguide (FEWG) coupled to the microwave energy source and including a field-enhancing zone having a cross- ...

APPARATUS FOR TREATING OBJECTS WITH PLASMA, USE OF THIS APPARATUS AND METHOD OF USING THIS APPARATUS

Apparatus for treating the surface of objects with plasma, having: an enclosure; a means for placing this enclosure under vacuum; a zone for storing objects to be treated, which is called the upstream storing zone; a zone for storing treated objects, which is called the downstream storing zone; at least two plasma treatment chambers having a means for injecting an active gas mixture, a means for creating an electrical discharge and a means for confining the plasma to the volume inside the chamber; and a means for transferring between the storing zones and the chambers, characterized in that the transferring means are conveying means defining a conveying direction, and in that the various chambers are placed one behind the other, in the conveying direction, and in that the atmospheres of the various plasma treatment chambers are not hermetically sealed off from one another. 1. An apparatus for treating the surface of objects with plasma , comprising{'b': 10', '110, 'an enclosure (; ),'}{'b': 45', '46, 'a means (P, P) for placing this enclosure under vacuum,'}{'b': 20', '120, 'a zone for storing objects to be treated, which is called the upstream storing zone (; ),'}{'b': 70', '120, 'a zone for storing treated objects, which is called the downstream storing zone (; ),'}{'b': 40', '50', '60', '140', '150', '42', '42', '142', '142', '43', '143, 'at least two plasma treatment chambers (, , ; , ) comprising a means for injecting an active gas mixture (A, B; A; B), a means for creating an electric discharge (; ) and a means for confining the plasma to the volume inside the chamber,'}{'b': 30', '130, 'a means for transferring (; ) between the storing zones and the chambers,'}{'b': 30', '130', '30', '130, 'wherein the means for transferring is a conveying means (; ) defining a conveying direction (F; F),'}wherein the various chambers are placed one behind the other, in the conveying direction, andwherein the atmospheres of the different plasma treatment chambers are not ...

In-line deposition system with enhanced adhesion of molybdenum on bottom shield

An in-line sputtering system includes a chamber and a sputtering target near a top region of the chamber. The system also includes a moving device located on a bottom region of the chamber configured to move a plurality of planar substrates loaded horizontally in a row with at least a gap distance between any neighboring substrates, The gap distance allows the bottom region to be subjected to a deposition from the sputtering target as the gap distance moves across the entire bottom region along with the plurality of planar substrates by the moving device, The system further includes a bottom shield disposed to cover entire bottom region except the moving device and configured to adhere the deposition through the gap distance from the sputtering target for preventing a deposition buildup.

Apparatus and method for continuous synthesis of carbon film or inorganic material film

An apparatus for continuous synthesis of carbon film or inorganic material film includes an external chamber having a gas intake gate and a gas exhaust gate; a substrate transporting apparatus disposed inside the external chamber and including a rolling-out member, a plurality of rollers, a rolling-in member, and a moving path; a substrate with metal conveyed along the moving path; a temperature controller correspondingly disposed above or under the substrate transporting apparatus, wherein when the substrate with metal passes through the temperature controller, the temperature controller heats the substrate with metal; a vacuum system connected to the external chamber and inhaling a gas through the gas intake gate and exhausting the gas through the gas exhaust gate; and a gas source controller connected to the external chamber and controlling a supply of the gas, wherein the gas includes a carbon source or an inorganic material source. 1. An apparatus for continuous synthesis of carbon film or inorganic material film , comprising:an external chamber including a gas intake gate and a gas exhaust gate;a substrate transporting apparatus installed in the external chamber, comprising a rolling-out member, a plurality of rollers, a rolling-in member, and a moving path; a substrate with metal being conveyed along the moving path;a temperature controller being correspondingly disposed above or under the substrate transporting apparatus, wherein when the substrate with metal passes through the temperature controller, the temperature controller heats the substrate with metal;a vacuum system connected to the external chamber, the vacuum system inhaling a gas through the gas intake gate and exhausting the gas through the gas exhaust gate;a gas source controller connected to the external chamber and controlling a supply of the gas, wherein the gas includes a carbon source or an inorganic material source; anda plasma system providing energy for pyrolyzing the gas.2. The ...

PLASMA TREATMENT METHOD, PLASMA TREATMENT APPARATUS, AND PLASMA-TREATED LONG OBJECT

A plasma treatment method subjects a long object to be treated to plasma treatment by placing the long object to be treated in contact with plasma, the density distribution of which varies while selectively passing the long object to be treated through an area having high plasma density so that a surface of the long object can be thoroughly and uniformly subjected to plasma treatment. The method is applied to a plasma treatment apparatus, and a plasma-treated long object can be obtained by the method. 1. A plasma treatment method in which a lengthy object to be treated is subjected to plasma treatment by being placed in contact with plasma , wherein:density distribution of plasma varies at least within a cross-section that is perpendicular to a conveying direction of the lengthy object to be treated; anda surface of the lengthy object to be treated is thoroughly and uniformly subjected to plasma treatment while being selectively passed through an area having high plasma density.2. A plasma treatment apparatus comprising:a first cylindrical portion in which plasma is generated therein;at least two or more of ring-shaped electrodes provided in a longitudinal direction on an outer circumferential surface of the first cylindrical portion, which electrodes generate plasma, the distribution density of which varies in a radial direction within the first cylindrical portion;a plasma generating gas introducing portion that introduces plasma generating gas into the first cylindrical portion; anda guide portion that is provided on the inner side of the first cylindrical portion and guides a lengthy object to be treated such as to advance through an area having high plasma density.3. The plasma treatment apparatus according to claim 2 , wherein:the guide portion is composed of a plurality of guide members which are arranged in the longitudinal direction of the first cylindrical portion; andthe plurality of guide members are formed into a shape enabling the lengthy object to be ...

DEPOSITION DEVICE

Provided is a deposition device which can secure work space without vertical overlap of the deposition unit and the units upstream and downstream thereof. This deposition device is provided with a deposition unit (), and upstream and downstream units () arranged to the left and right thereof. The deposition unit () is provided with: a deposition roller (); multiple guide rollers (); a main chamber () having a deposition roller housing unit () and, thereabove, a guide roller housing unit (); first and second process chambers () which house multiple deposition process devices () to the left and right of the deposition roller housing unit (); and process chamber support units () for supporting the first and second process chambers () so as to allow the first and second process chambers () to move between a regular position for deposition and a retracted position retracted to the left or right, and between the retracted position and an exposure position separated in the front/back direction. 1. A deposition device performing deposition on a surface of a belt-shaped film substrate while conveying the film substrate in the longitudinal direction thereof , comprising:a deposition unit, an upstream unit arranged on the upstream side in the conveying direction of the film substrate than the deposition unit, and a downstream unit arranged on the downstream side in the conveying direction of the film substrate than the deposition unit, whereinthe deposition unit has a deposition roller rotatable around a horizontal rotation center axis, a plurality of deposition process devices arranged around the deposition roller, a plurality of guide rollers arranged so as to guide the film substrate between the upstream and downstream units and the deposition roller, a main chamber having a deposition roller housing unit which houses the deposition roller and a guide roller housing unit which is located on the upper side thereof and houses at least a part of the guide rollers, first and ...

Device for Processing Plasma with a Circulation of Process Gas in Multiple Plasmas

The device for plasma processing as per the invention is comprised of a processing chamber with at least two plasma processing zones with process gas flowing through them, a gas inlet that is suitable for feeding the process gas to the at least two plasma processing zones, and a gas outlet that is suitable for discharging exhaust gas from the processing chamber, as well as a circulation unit with a circulation line and a circulation pump, wherein the circulation unit is suitable for feeding at least a portion of the exhaust gas into the gas inlet and wherein the exhaust gas that is fed into the gas inlet is a mixture of gases that are discharged from at least two of the plasma processing zones. Because of the mixture of exhaust gases from at least two of the plasma processing zones and their renewed feeding into the gas inlet, the components of the process gas from the at least two plasma processing zones that have already been converted, but also those that have not yet been converted, are mixed and a homogenization of the process gas is therefore achieved that is fed into the plasma processing zones. This reduces the inhomogeneity of the plasma processing among individual substrates that arises from differences in the plasma process in different plasma processing zones. 1. Device for plasma processing , comprising: at least two plasma processing zones with process gas flowing through them,', 'a gas inlet that is suitable for feeding the process gas into the at least two plasma processing zones, and', 'a gas outlet that is suitable for discharging an exhaust gas from the processing chamber, and, 'a processing chamber witha circulation unit with a circulation line and a circulation pump, wherein the circulation unit is suitable for feeding at least a portion of the exhaust gas into the gas inlet,wherein the exhaust gas fed into the gas inlet is a mixture of gases that are discharged from at least two of the plasma processing zones.2. Device for plasma processing ...

PLASMA SYSTEM

A plasma system comprises a first electrode which connecting to a power generator and a second electrode which is grounded and disposed corresponding to the first electrode, and a spacing between the first electrode and the second electrode. A conveying device transmits a substrate of non-conductive material into and through the spacing without touching the first electrode or the second electrode. A first gas-import device is positioned closed to the first electrode and comprises a plurality of first gas-import sections. A second gas-import device is positioned closed to the second electrode. A working gas imported into the spacing between the first electrode and the second electrode is stimulated by the power generator, and plasma is generated simultaneously on both sides of the substrate. 1. A plasma system , comprising:a first electrode;a second electrode oppositely disposing and having a spacing with respect to the first electrode;a conveying device transmitting a substrate passing through the spacing without contacting either the first electrode or the second electrode;a first gas-import device being positioned closer to the first electrode than to the spacing, and the first gas-import device comprises a plurality of first gas-import sections which each of the first gas-import section comprises a first gas-inlet and a first gas-outlet; anda second gas-import device being positioned closer to the second electrode than to the spacing;wherein the first gas-outlet of the first gas-import device faces and is communicative to the first electrode; andwherein the substrate is made of non-conductive material, the first electrode is connected to a power generator and the second electrode is electrically connected with ground potential, and a working gas imported into the spacing between the first electrode and the second electrode is stimulated by the power generator, and plasma is generated simultaneously on both sides of the substrate.2. The plasma system as claimed in ...

LARGE AREA ENERGETIC ION SOURCE

An RF antenna system for a plasma chamber comprises an RF input coupling a trunk to an RO power supply; two main branches electrically connected to the main trunk, each of the two main branches coupled to a plurality of rod antennas; a plurality of tuning devices, each provided between one of the rod antennas and the corresponding main branch. 1. An RF antenna for a plasma chamber , comprising:a first set of conductive rods having an input end on a side of a first sidewall of the plasma chamber and a grounded end on a side of an opposite sidewall of the plasma chamber;a second set of conductive rods having a grounded end on a side of the first sidewall and an input end on a side of the opposite sidewall, wherein the first set of conductive rods and the second set of conductive rods are arranged in an interlaced manner;a first set of variable tuning elements, each connected to the input end of a respective one of the first set of conductive rods;a second set of variable tuning elements, each connected to the input end of a respective one of the second set of conductive rods;a first RF branch connected to the first set of variable tuning elements;a second RF branch connected to the second set of variable tuning elements, wherein the first RF branch and the second RF branch are commonly couple to an RF source.2. The RF antenna of claim 1 , further comprising a plurality of quartz tubes and wherein each of the conductive rods is inserted in one of the quartz tubes.3. The RF antenna of claim 1 , further comprising a plurality of magnets claim 1 , each configured to be positioned over one of the conductive rods.4. The RF antenna of claim 1 , wherein each of the variable tuning elements comprises a variable capacitor.5. The RF antenna of claim 1 , wherein all of the conductive rods are arranged parallel to each other claim 1 , and any two of the conductive rods define a parallelogram with the first sidewall and the opposite sidewall of the plasma chamber.6. A plasma ...

Atomic layer etching of metal oxide

A method for etching a metal oxide layer on a semiconductor substrate, comprising providing a plurality of cycles, is provided. Each cycle comprises exposing the metal oxide layer to a reactive hydrogen-containing gas or plasma to transform a part of the metal oxide layer into a layer of metal hydride, stopping the exposing the metal oxide layer to the reactive hydrogen-containing gas or plasma, heating the layer of metal hydride to at least a sublimation temperature to sublime the layer of metal hydride, and cooling the metal oxide layer to a temperature below the sublimation temperature.

COMMON DEPOSITION PLATFORM, PROCESSING STATION, AND METHOD OF OPERATION THEREOF

An apparatus for depositing a thin film on a substrate is described. The apparatus includes a substrate support having an outer surface for guiding the substrate along a surface of the substrate support through a first vacuum processing region and at least one second vacuum processing region, a first deposition sources corresponding to the first processing region and at least one second deposition source corresponding to the at least one second vacuum processing region. The apparatus further includes one or more vacuum flanges providing at least a further gas outlet between the first deposition source and the at least one second deposition source. 1. An apparatus for depositing a thin film on a substrate , comprising:a substrate support having a curved outer surface; an electrode having a surface opposing the curved outer surface of the substrate support;', 'a processing gas inlet and a processing gas outlet arranged at opposing sides of the surface of the electrode;', 'a first separation wall surrounding the surface of the electrode, the processing gas inlet, and the processing gas outlet; and', 'at least one separation gas inlet having one or more separation gas inlet openings surrounding the surface of the electrode, the processing gas inlet, the processing gas outlet, and the first separation wall; and, 'a first deposition source corresponding to a first processing region at the curved outer surface and at least one second deposition source corresponding to at least one second vacuum processing region at the curved outer surface, wherein at least the first deposition source comprisesa first vacuum flange for evacuation of the processing gas of the first deposition source.2. The apparatus according to claim 1 , further comprising:one or more vacuum flanges providing at least a further gas outlet between the first deposition source and the at least one second deposition source, wherein the one or more vacuum flanges are provided between a first separation gas ...

GLASS PALLET FOR SPUTTERING SYSTEMS

Pallets for transporting one or more glass substrates in a substantially vertical orientation through a sputtering system. In some cases, a pallet comprising a frame with an aperture and an adjustable grid array within the aperture. The adjustable grid array is configurable to hold a plurality of glass substrates of different shapes and/or sizes. In one case, the adjustable grid array comprises a system of vertical and horizontal support bars, wherein the vertical support bars configured to both support the plurality of glass substrates at their vertical edges, wherein the horizontal support bars are configured to support the plurality of glass substrates at their horizontal edges, wherein the ends of the horizontal support bars are slideably engaged with the vertical support bars. 1. A pallet for transporting a plurality of glass substrates through a sputtering apparatus , the pallet comprising:a frame comprising an aperture; andan adjustable grid array within the aperture, the adjustable grid array configurable to hold the plurality of glass substrates of different shapes and/or sizes; wherein the pallet is configured to hold said plurality glass substrates, each by at least two edges, and in a substantially vertical orientation during transport through the sputtering apparatus.2. The pallet of claim 1 , wherein the aperture is between about 60 inches and 130 inches along a first dimension claim 1 , and between about 72 inches and about 205 inches along a second dimension3. The pallet of claim 1 , further comprising said plurality of glass substrates claim 1 , wherein a work surface of each of the plurality of glass substrates is masked about its periphery between about 2 mm and about 15 mm.4. The pallet of claim 1 , further comprising an electrically conductive component configured to establish electrical communication with an electrically conductive coating on a work surface of each of the plurality of glass substrates.58-. (canceled)9. The pallet of claim 1 , ...

Metal wire with anti-corrosive coating and installation and method for coating a metal wire

An installation for continuously coating wires by means of plasma deposition includes at least one plasma deposition chamber having a pressure-tight inlet and a pressure-tight outlet which are capable of maintaining a reduced pressure inside the chamber when they are passed through by a wire which travels through the chamber. At least one generator of plasma rays is provided in the chamber for the deposition of a target material on the external surface of the wire in a portion thereof which is between the pressure-tight inlet and the pressure-tight outlet. A transport system is provided in the installation in order to progressively draw the wire through the plasma deposition chamber.

THERMAL SPRAYING METHOD AND DEVICE THEREFOR

The invention relates to a thermal spraying method, in particular for coating a surface by means of a plasma beam, using a shaped plasma beam, wherein a first plasma beam by means of at least one second plasma beam is controlled and/or shaped, wherein the second plasma beam at least partially and at least temporarily penetrates the first plasma beam. 1. Thermal spraying method for coating a surface by means of a plasma beam , wherein a first plasma beam by means of at least one second plasma beam is unified and/or shaped to form the plasma beam , wherein the second plasma beam at least partially and at least temporarily penetrates the first plasma beam.2. Thermal spraying method according to claim 1 , wherein the plasma beam resulting from the first plasma beam and from the second plasma beam claim 1 , compared with the first and the second plasma beam claim 1 , has a wider and more homogenous plasma jet.3. Thermal spraying method according to claim 1 , wherein the at least one second plasma beam in relation to the first plasma beam is aligned at a predefinable angle claim 1 , wherein the angle will be unequal to 0 or 180°.4. Thermal spraying method according to claim 3 , wherein the at least one second plasma beam in relation to the first plasma beam is aligned at a predefinable angle between 15 and 45 degrees.5. Thermal spraying method according to claim 1 , wherein a coating powder is added to the first plasma beam.6. Thermal spraying method according to claim 4 , wherein the surface is a surface of a running strip claim 4 , and that the second plasma beam is aligned counter to the running direction of the running strip to be coated.7. Device for carrying out a thermal spraying method by means of a plasma beam claim 4 , having a first source for a first plasma beam claim 4 , wherein a second source for a second plasma beam claim 4 , which second source is disposable in such a manner that the second plasma beam at least partially and at least temporarily ...

GAS SEPARATION BY ADJUSTABLE SEPARATION WALL

An apparatus for coating a thin film on a flexible substrate is described. The apparatus includes a coating drum having an outer surface for guiding the flexible substrate through a first vacuum processing region and at least one second vacuum processing region, a gas separation unit for separating the first vacuum processing region and at least one second vacuum processing region and adapted to form a slit through which the flexible substrate can pass between the outer surface of the coating drum and the gas separation unit, wherein the gas separation unit is adapted to control fluid communication between the first processing region and the second processing region by adjusting the position of the gas separation unit. 1. An apparatus for coating a thin film on a substrate , comprising:a substrate support having an outer surface for guiding the substrate through a first vacuum processing region and at least one second vacuum processing region; anda gas separation unit separating the first vacuum processing region from the at least one second vacuum processing region, wherein the gas separation unit is positioned to form a slit through which the substrate can pass between the outer surface of the substrate support and the gas separation unit, wherein the gas separation unit is directly mounted to a body of a deposition source corresponding to the first vacuum processing region or the second vacuum processing region.2. The apparatus according to claim 1 , wherein the substrate support is a coating drum having an axis.3. The apparatus according to claim 2 , wherein an actuator is provided between the body of the deposition source and a chamber wall of the apparatus.4. The apparatus according to claim 2 , further comprising a support element connected to the gas separation unit and the axis of the coating drum.5. The apparatus according to claim 4 , wherein the support element is a disk or a portion of a disk.6. The apparatus according to claim 5 , wherein the disk or ...

METHOD FOR NITRIDING GRAIN-ORIENTED ELECTRICAL STEEL SHEET

Provided is a method for nitriding a grain-oriented electrical steel sheet which is very useful in obtaining excellent magnetic properties with no variation, that enables generating glow discharge between positive electrodes and negative electrodes disposed in a nitriding zone and irradiating the generated plasma to a strip to perform appropriate nitriding. 1. A method for nitriding a grain-oriented electrical steel sheet comprising plasma nitriding a strip by glow discharge using an apparatus after cold rolling and before secondary recrystallization annealing during producing a grain-oriented electrical steel sheet , the apparatus comprising:a nitriding zone for nitriding the strip;a cooling zone for cooling the strip; andan optional heating zone provided upstream of the nitriding zone for heating the strip,wherein the nitriding zone contains positive electrodes for glow discharge provided opposite to the strip and negative electrodes for glow discharge provided proximate to the strip between the positive electrodes and the strip, and glow discharge is generated between the positive electrodes and the negative electrodes and the generated plasma is applied to the strip to nitride the strip.2. The method according to claim 1 , wherein the nitriding zone is kept under reduced pressure.3. The method according to claim 2 , wherein at least one of the heating zone and the cooling zone is kept at a state with a lower degree of pressure reduction compared to the nitriding zone and reduced pressure compared to atmospheric pressure.4. The method according to claim 1 , further comprising an upstream atmosphere adjusting zone provided between the heating zone and the nitriding zone claim 1 , and a downstream atmosphere adjusting zone provided between the nitriding zone and the cooling zone.5. The method according to claim 4 , wherein the upstream atmosphere adjusting zone and the downstream atmosphere adjusting zone are each divided into multiple air chambers where the ...

High throughput Vacuum Deposition Sources and System

A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber. 1. A high throughput deposition apparatus , comprising:a process chamber;a plurality of deposition sources that form a first closed loop in the process chamber;a first substrate carrier assembly configured to hold one or more substrates inside the first closed loop, wherein the one or more substrates are configured to face outward to receive a deposition material from the plurality of deposition sources in the first closed loop, wherein the deposition sources are configured to produce vapor for chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD); anda transport mechanism configured to move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.2. The high throughput deposition apparatus of claim 1 , further comprising:a plurality of deposition sources that form a second closed loop in the process chamber; anda second substrate carrier assembly configured to hold one or more substrates and configured to receive a deposition material from the plurality of deposition sources in the second closed loop, wherein the one or more substrates held by the second substrate carrier assembly are parallel to the one or more substrates held by the first substrate carrier assembly.3. The high throughput deposition apparatus of claim 1 , wherein the ...

DEVICE, METHOD AND USE FOR THE COATING OF LENSES

A device, a method, and a use for coating lenses are proposed, wherein the lenses to be coated are arranged in pairs over parallel, tubular targets. The distance of the targets to each other and/or to the lenses is varied for individual adaption. Further, the lenses are coated from both sides. 112-. (canceled)13. Device for coating lenses , by means of sputtering , comprising:at least two targets, anda carrier for holding at least one lens to be coated,wherein the targets are elongated and/or tubular,with at least one of the following features:the targets are adjustable to change the distance to the at least one lens to be coated and/or the distance of the targets; and/orthe device is designed for two-sided coating of the at least one lens to be coated.14. Device according to claim 13 , wherein the device has an adjustment drive for common adjustment of the targets.15. Device according to claim 13 , wherein the targets are adjustable obliquely and/or symmetrically to a center plane.16. Device according to claim 13 , wherein the targets each are adjustably guided in a restricted guidance.17. Device according to claim 13 , wherein the targets and/or their axes of rotation run parallel to one another.18. Device according to claim 13 , wherein the targets are arranged on opposite sides of the lens and/or the carrier.19. Device according to claim 13 , wherein two of the targets are arranged on one side and two others of the targets are arranged on the opposite side of the lens and/or the carrier.20. Method for coating curved surfaces of lenses by means of sputtering claim 13 , comprising:providing at least two elongated and/or tubular, parallel targets; andadjusting the targets for changing the distance to at least one lens to be coated and/or the distance of the targets, in order to adapt the coating behavior to the lens.21. Method for coating lenses claim 13 , by means of sputtering claim 13 , wherein at least one lens is coated in a device and/or coating chamber claim ...

System, method and support for coating eyeglass lenses

An installation, a carrier, and a method for coating eyeglass lenses are proposed, wherein a carrier with eyeglass lenses held in a rotatable manner is conveyed in succession in different coating devices or coating lines, in order to coat in an alternating manner opposite sides of the eyeglass lenses and/or to apply different coatings. In particular, the carriers with the eyeglass lenses are conveyed from a coating device or coating line by means of an evacuated transfer chamber to another coating device or coating line.

ROLL TO ROLL FABRICATION APPARATUS FOR PREVENTING THERMAL IMPACT

A roll to roll fabrication apparatus includes: a vacuum chamber having an installation chamber and a process chamber; a preprocessing unit in the installation chamber to process a surface of a film which is transferred to enhance a film characteristic in a subsequent CVD process; a process drum in the process chamber to wind the film thereon; a process treatment unit in the process chamber to form a layer by performing a CVD process on the film wound on the process drum; and a plurality of heaters in the installation chamber and the process chamber to gradually increase a temperature of the film wound on the process drum to prevent application of a thermal impact to the film due to the high-temperature process drum. 1. A roll to roll fabrication apparatus , comprising:a vacuum chamber having an installation chamber and a process chamber;a preprocessing unit in the installation chamber to process a surface of a film which is transferred;a process drum in the process chamber to wind the film thereon;a process treatment unit in the process chamber to process the film wound on the process drum; anda plurality of heaters in at least one chamber of the installation chamber and the process chamber to gradually increase a temperature of the film wound on the process drum.2. The roll to roll fabrication apparatus of wherein the heater includes:at least one first heaters in the installation chamber; andat least one second heaters in the process chamber.3. The roll to roll fabrication apparatus of wherein the heaters include an infrared ray lamp.4. The roll to roll fabrication apparatus of claim 1 , further comprising a drum heater at the process drum.5. The roll to roll fabrication apparatus of wherein the process treatment unit is a CVD processor using plasma gas.6. The roll to roll fabrication apparatus of wherein the preprocessing unit processes a surface of a film by using plasma gas.7. The roll to roll fabrication apparatus of claim 6 , further comprising:a first vacuum ...

Roll-to-roll sputtering process with hybrid target and product thereof

The present invention provides a roll-to roll sputtering process with a hybrid target comprising: unwinding a flexible polymer substrate from an unwinding axis; sputtering a hybrid target to the flexible polymer substrate for forming a first metal film, and a second metal film; and rewinding the flexible polymer substrate to a rewinding axis, and further comprising the following steps of: using laser to form a first electrode section and a second electrode section on the first metal film and the second metal film; and disposing a detecting substance layer on the second electrode section. Moreover, a product made by the roll-to-roll sputtering process is provided. Compared to the prior art, the hybrid target of the present invention is formed by multiple metals and can be sputtered to the substrate for forming multiple metal thin films. The present invention has an advantage of shortening the processing time and saving cost.

Barrier film or sheet and laminated packaging material comprising the film or sheet and packaging container made therefrom

Barrier films comprising a PECVD barrier coating with diamond-like carbon are disclosed, along with methods of manufacturing such films, and laminated packaging materials comprising such films, in particular intended for liquid food packaging are disclosed. Packaging containers comprising the laminated packaging material or being made from the laminated packaging material, in particular to a packaging container intended for liquid food packaging are also disclosed.

Sputtering cathode, sputtering device, and method for producing film-formed body

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

PLASMA-TREATMENT INSTRUMENT

A plasma-treatment instrument for treating a surface with a dielectric-barrier plasma field generated between an electrode and the surface has a high a.c. voltage supplied to the electrode by a controller. The electrode forms with a dielectric surrounding the electrode a cylindrical roller that is rotatably supported in a grip housing. The plasma-treatment instrument has a shell surface and is capable of being rolled along the surface. The plasma-treatment allows an efficient and safe treatment of the surface by virtue of the fact that the electrode includes at least two partial electrodes arranged alongside one another at equal intervals from the shell surface and which are insulated from one another by the dielectric. The at least two partial electrodes are connected to different terminals of a source of high a.c. voltage. 1. A plasma-treatment instrument for treating a surface with a dielectric-barrier plasma field which is generated between an electrode , supplied with a high alternating current (a.c.) voltage by a controller , and the surface ,wherein the electrode forms with a dielectric surrounding the electrode a cylindrical roller,wherein the cylindrical roller is rotatably supported in a grip housing with a shell surface, and is configured to be rolled along the surface,wherein the electrode comprises at least two partial electrodes arranged alongside one another at equal intervals from the shell surface, wherein the at least two partial electrodes are insulated from one another by the dielectric, wherein the at least two partial electrodes are connected or connectable to different terminals of a source of high a.c. voltage,wherein adjacent partial electrodes of the at least two partial electrodes are fed by the controller with equal-but-opposite, with respect to the waveform and the voltage level, partial a.c. voltages compensating each other.2. The plasma-treatment instrument according to claim 1 , wherein the at least two partial electrodes each have ...

DEVICE FOR THE TREATMENT OF A WEB SUBSTRATE IN A PLASMA ENHANCED PROCESS

A device for treating a web substrate in a plasma enhanced process. The device includes a treatment station with a vacuum process chamber. A plasma treatment unit is allocated to the treatment station which is designed to form a plasma zone within the process chamber for treating a surface of the web substrate. The device further includes a transporting system for continuously transporting the web substrate through the treatment station with an unwind roller and a rewind roller, wherein the transporting system defines a transporting path of the web substrate through the process chamber. The plasma treatment unit includes an extensive antenna and a radiofrequency generator for exciting the extensive antenna to a resonant frequencies. 1. A device for continuously treating a web substrate in a plasma enhanced process , the device comprising:at least one treatment station including a process chamber, wherein at least one plasma treatment unit is allocated to the at least one treatment station which is designed to form a plasma zone within the process chamber for treating a surface of the web substratea transporting system configured to continuously transport the web substrate through the at least one treatment station, with an unwind roller and a rewind roller, wherein the transporting system defines a transporting path of the web substrate through the process chamber,wherein the at least one plasma treatment unit comprises at least one extensive antenna and at least one radiofrequency generator configured to excite said at least one extensive antenna to at least one of its resonant frequencies,wherein the at least one extensive antenna comprises a plurality of interconnected elementary resonant meshes, each of the resonant meshes comprising at least two conductive legs and at least two capacitors,and wherein the transporting system in the process chamber defines a treatment path section for the web substrate, wherein the treatment path section for the web substrate ...

Laminate film, organic electroluminescence device, photoelectric conversion device, and liquid crystal display

Provided is a laminate film having a substrate and at least one thin film layer which is formed on at least one surface of the substrate, wherein at least one of the thin film layers satisfies all of the following conditions (i) to (iv): (i) silicon atoms, oxygen atoms, and carbon atoms are contained, (ii) a content ratio X (at %) of the number of carbon atoms relative to a sum of the number of silicon atoms, the number of oxygen atoms, and the number of carbon atoms is 3 to 25 at %, (iii) an average density d (g/cm 3 ) is 2.12 g/cm 3 or higher and is less than 2.25 g/cm 3 , and (iv) the content ratio X (at %) of the number of carbon atoms and the average density d (g/cm 3 ) satisfy a condition represented by the following formula (1): d >(2.22−0.008 X )  (1).

Sputtering Cathode, Sputtering Device, and Method for Producing Film-Formed Body

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

COMPACT PORTABLE PLASMA REACTOR

Embodiments of the subject invention relate to a small modular self-contained surface plasma device for decontamination of air and surfaces within enclosed volumes. Embodiments of the subject invention relate to a method and apparatus using the technical process of dielectric barrier discharge (DBD) surface plasma generation from ambient atmosphere for decontamination of air and surfaces within enclosed volumes. The primary application mode is for preservation of perishable commodities within industrial shipping containers through reduction of surface spoilage organisms and destruction of evolved gaseous ethylene that causes premature ripening. Additional implementations include deployment for oxidation of surfaces and/or container atmospheres in applications to diminish or eradicate pesticides, toxins, chemical residues, and other natural or introduced contaminants. Other embodiments envisioned include incorporation of device capabilities and or ancillary modules for feedback input (e.g. ozone sensor(s) to maintain steady state levels, self-tuning circuitry to adjust operating frequency), communication (e.g. among modules, RFID data loggers, Wi-Fi output), and programing (e.g. user input of container volume, transit time, ozone level, etc.). 1. A power supply system , comprising:a power amplifier connected to a load, a transformer; and', 'an inductor,, 'wherein the at least one power amplifier comprises receive a supply voltage at an operating frequency; and', 'output a supply power to the load at the operating frequency;, 'wherein the transformer is configured towherein the power amplifier further comprises a variable capacitor in parallel with a transistor,wherein a resonance frequency of the transformer connected to the load is set based on values of the inductor and the variable capacitor, andwherein the variable capacitor is configured to be adjusted to tune its capacitance value to match an impedance of the power amplifier with an impedance of the load.2. The ...

Substrate processing apparatus

A substrate processing apparatus of the present disclosure includes a placing table provided to be rotatable around an axis; a gas supplying section that supplies gas to regions through which a substrate sequentially passes while being moved in a circumferential direction with respect to the axis as the placing table is rotated; and a plasma generating section that generates plasma using the supplied gas. The plasma generating section includes an antenna that radiates microwaves, and a coaxial waveguide that supplies the microwaves to the antenna. Line segments constituting a plane shape of the antenna when viewed in a direction along the axis include two line segments which are spaced to be distant from each other as being spaced away from the axis. The coaxial waveguide supplies the microwaves to the antenna from a gravity center of the antenna.

PLANETARY GEAR ASSEMBLY FOR SPUTTERING MULTIPLE BALLOON CATHETER DISTAL ENDS

An apparatus includes an assembly and hollow templates. The assembly includes multiple hinges mounted thereon. The assembly is configured to rotate about a first axis, and each of the hinges is additionally configured to rotate about a respective second axis. The hollow templates are fitted on the respective hinges and are each configured to contain a balloon-based distal end of a medical instrument, each template having a patterned opening through which one or more electrodes are deposited on the distal end. 1. An apparatus , comprising:an assembly, which comprises multiple hinges mounted thereon, wherein the assembly is configured to rotate about a first axis and each of the hinges is additionally configured to rotate about a respective second axis; andhollow templates, which are fitted on the respective hinges and are each configured to contain a balloon-based distal end of a medical instrument, wherein each template has a patterned opening through which one or more electrodes are deposited on the distal end.2. The apparatus according to claim 1 , and comprising a motor assembly claim 1 , which is configured to rotate the assembly about the first axis in a first direction at a first angular velocity claim 1 , and to rotate at least one of the hinges about the respective second axis in a second direction at a second angular velocity.3. The apparatus according to claim 2 , wherein the first direction differs from the second direction.4. The apparatus according to claim 2 , and comprising a controller claim 2 , which is configured to control the motor assembly.5. The apparatus according to claim 1 , and comprising a vacuum chamber claim 1 , which is configured to contain the assembly in vacuum environment.6. The apparatus according to claim 5 , and comprising a sputtering target made from a given material claim 5 , which is configured to sputter atoms or ions of the given material in the vacuum chamber.7. The apparatus according to claim 1 , wherein each of the ...

Apparatus and Method for Applying Surface Coatings

The present invention provides a method for applying a surface coating on, for example, a sheet of fabric and further provides a plasma chamber () for coating a sheet of fabric, e.g. a textile material, with a polymer layer, the plasma chamber () comprising a plurality of electrode layers (RF, M) arranged successively within the plasma chamber, wherein at least two adjacent electrode layers are radiofrequency electrode layers (RF) or ground electrode layers (M), thereby providing a surface coating on both sides of a fabric sheet. 1. A plasma chamber for coating a sheet of fabric , such as a textile material , with a polymer layer , the plasma chamber having a plurality of electrode layers each having a generally planar or plate like form arranged successively within the plasma chamber , wherein at least two adjacent electrode layers are radiofrequency electrode layers or ground electrode layers.2. A plasma chamber according to having at least two pairs of electrode layers claim 1 , and wherein the outer pair of electrode layers are either ground electrode layers or radiofrequency electrode layers.3. A plasma chamber according to any preceding claim claim 1 , having a first electrode set and a second electrode set claim 1 , the first and second electrode sets being arranged either side of a passage for receiving a fabric.4. A plasma chamber according to claim 3 , wherein one or both of the first and second electrode sets has an inner electrode layer and a pair of outer electrode layers.5. A plasma chamber according to claim 4 , wherein either the inner electrode layer is a radiofrequency electrode and the outer electrode layers are ground electrodes claim 4 , or the inner electrode layer is a ground electrode and the outer electrode layers are radiofrequency electrodes.6. A plasma chamber according to any preceding claim claim 4 , wherein the radiofrequency electrode layer or layers includes heat regulating means.7. A plasma chamber according to any preceding claim ...

Plasma processing apparatus and substrate processing apparatus provided with same

Provided is a plasma processing apparatus including: a rotary mounting table supported by a rotatory shaft arranged rotatably within a processing chamber and including multiple substrate placement units arranged side by side in a circumferential direction; a processing gas supplying section for supplying processing gas into the processing chamber; a plasma generating section wherein multiple microwave introducing mechanisms, each provided on the ceiling of the processing chamber so as to face the rotary mounting table and used for generating a plasma of the processing gas, are arranged in multiple rows spaced apart from each other from the inside of the movement path of the substrates when the rotary mounting table is rotated to the outside, each row of microwave introducing mechanisms being formed by arranging the microwave introducing mechanisms annularly side by side along the circumferential direction; and an exhaust unit that evacuates an inside of the processing chamber.

VACUUM PROCESSING APPARATUS AND METHOD FOR VACUUM PROCESSING SUBSTRATES

A vacuum treatment apparatus includes a vacuum treatment recipient with a circular opening between an inside and exterior of the recipient. The recipient houses a turntable, which defines a plane (P) along its table surface, is drivingly rotatable around a central axis perpendicular to plane (P), and exhibits a plurality of circular substrates supports. The opening is arranged such that during a turn of the turntable the area of each of the substrate supports and the opening are fully aligned and completely face each other. The vacuum treatment apparatus also includes a PVD deposition source attached to the opening. The PVD source has a a circular material target and a static magnet arrangement. The magnet arrangement is arranged in a plane (M) in parallel to plane (P) and is not rotationally symmetric around a central axis running centrally through the magnet arrangement and being perpendicular to the plane (M). 1. A vacuum treatment apparatus comprising{'b': 12', '13', '12', '1, 'claim-text': defines a plane (P) along its table surface;', 'is drivingly rotatable around a central axis (B) perpendicular to plane (P)', {'b': 2', '9, 'and exhibits a plurality of circular substrate supports (, . . . );'}], 'a vacuum treatment recipient () with at least one sealable, circular opening () between an inside (i) and exterior (e) of said recipient (), said recipient housing a turntable (), which'}{'b': 13', '1', '2', '9', '13, 'said at least one opening () being arranged such that during a turn of the turntable () the area of each of the substrate supports (, . . . ) and the opening () are fully aligned and completely face each other;'}{'b': 14', '13, 'claim-text': {'b': 15', '11', '11, 'claim-text': being arranged in a plane (M) in parallel to plane (P); and', 'not being rotational symmetric around a central axis (C) running centrally through said magnet arrangement and being perpendicular to said plane (M)., 'said PVD source exhibiting at least a circular material target ...

APPARATUS AND METHODS FOR DEFINING A PLASMA

Apparatus comprising: a support arranged to transport a moving substrate; a plasma generator arranged to generate plasma; and an electrode arranged to bias ions within the plasma towards the moving substrate to form an ion flux. The ion flux has an energy level between 3.6 eV and 250 eV. Alternatively, apparatus for defining plasma having a plurality of spaced race track portions. 128-. (canceled)29. An apparatus for curing a radiation curable material on a substrate , the apparatus comprising:a cylindrical drum arranged to rotate to transport a moving substrate;a plasma generator arranged to generate plasma;a radiation curable material delivery device arranged to deliver radiation curable material towards the cylindrical drum such that the radiation curable material will, in use, condense on the substrate; andone or more electrodes arranged to bias positive ions within the plasma towards the cylindrical drum to form a positive ion flux for curing radiation curable material condensed on the substrate, the ion flux having an energy level between 3.6 eV and 250 eV, the cylindrical drum defining one of the one or more electrodes.30. An apparatus according to claim 29 , further comprising a magnet array arranged to spatially define the plasma.31. An apparatus according to arranged to provide a unit energy dose which is no greater than 15 J/cm.32. An apparatus according to claim 29 , wherein the cylindrical drum is arranged to move the substrate at a speed through the ion flux such that the dwell time is no greater than 5 minutes.33. An apparatus according to claim 29 , further comprising a gas delivery system arranged to deliver a primary gas from which the plasma is generated and one or more further gases that are distinct from the primary gas.34. An apparatus for defining a plasma comprising:a drum arranged to transport a moving substrate;a plasma generator arranged to generate a plasma; and a first race track portion that is adjacent to a first surface region of the ...

LINEAR SCANNING SPUTTERING SYSTEM AND METHOD

A sputtering system having a processing chamber with an inlet port and an outlet port, and a sputtering target positioned on a wall of the processing chamber. A movable magnet arrangement is positioned behind the sputtering target and reciprocally slides behinds the target. A conveyor continuously transports substrates at a constant speed past the sputtering target, such that at any given time, several substrates face the target between the leading edge and the trailing edge. The movable magnet arrangement slides at a speed that is at least several times faster than the constant speed of the conveyor. A rotating zone is defined behind the leading edge and trailing edge of the target, wherein the magnet arrangement decelerates when it enters the rotating zone and accelerates as it reverses direction of sliding within the rotating zone. 1. A method for processing substrate by sputtering , comprising:placing plurality of substrates on a conveyor;operating the conveyor to transport the plurality of substrates at a constant speed and in an orientation facing the target, such that at any given time, several substrates face the target between a leading edge and a trailing edge of the target;reciprocally scanning a magnet arrangement behind the target while sustaining plasma in a space between the target and the substrates; and,wherein the step of reciprocally scanning the magnet arrangement is performed at a speed that is at least several times faster than the constant speed of the conveyor.2. The method of claim 1 , wherein the step of reciprocally scanning the magnet arrangement is performed at a speed that is at least five times the constant speed of the substrate transport.3. The method of claim 1 , wherein the step of reciprocally scanning the magnet arrangement is performed at a speed that is at least seven times the constant speed of the substrate transport.4. The method of claim 1 , further comprising defining rotating zones behind leading edge and trailing edge of ...

APPARATUS FOR VACUUM DEPOSITION ON A SUBSTRATE AND METHOD FOR MASKING THE SUBSTRATE DURING VACUUM DEPOSITION

An apparatus for vacuum deposition on a substrate is provided. The apparatus includes a vacuum chamber having a deposition area, one or more deposition sources in the deposition area and configured for vacuum deposition on the substrate while the substrate is transported along a transport direction past the one or more deposition sources, and a masking arrangement in the deposition area and configured for masking at least one of a first edge portion and a second edge portion of the substrate while the substrate passes the masking arrangement and the one or more deposition sources. The first edge portion and the second edge portion are opposite edge portions of the substrate. 1. An apparatus for vacuum deposition on a substrate , comprising:a vacuum chamber having a deposition area;one or more deposition sources in the deposition area and configured for vacuum deposition on the substrate while the substrate is transported along a transport direction past the one or more deposition sources; anda masking arrangement in the deposition area and configured for masking at least one of a first edge portion and a second edge portion of the substrate while the substrate passes the masking arrangement and the one or more deposition sources, wherein the first edge portion and the second edge portion are opposite edge portions of the substrate.2. The apparatus of claim 1 , wherein the first edge portion is an upper edge portion of the substrate and the second edge portion is a lower edge portion of the substrate.3. The apparatus of claim 1 , wherein the masking arrangement is configured to be moveable in a direction different from the transport direction.4. The apparatus of claim 3 , wherein a substrate motion is substantially horizontal.5. The apparatus of claim 3 , further including one or more actuators configured to move the masking arrangement continuously or stepwise.6. The apparatus of claim 5 , wherein the one or more actuators are configured to move the masking ...

APPARATUS FOR PROCESSING A SURFACE OF SUBSTRATE AND METHOD OPERATING THE APPARATUS

The invention relates to an apparatus for processing a surface of a substrate by atomic layer deposition and to a method for operating the apparatus. The apparatus includes a deposition chamber and one or more lead-through connections provided between one or more side chambers and the deposition chamber. The one or more lead through connections includes one or more lead-through chambers and a secondary pressure device operatively connected to the one or more lead-through chambers. 117.-. (canceled)19. The apparatus according to claim 18 , wherein the primary pressure device and the secondary pressure device are independently controllable.20. The apparatus according to claim 18 , wherein the side chamber is provided with a side chamber pressure device for controlling the pressure inside of the side chamber.21. The apparatus according to claim 18 , wherein the side chamber is a loading chamber for loading the web-like substrate to the deposition chamber claim 18 , and the lead-through connection is a substrate lead-through connection via which the web-like substrate transported between the loading chamber and the deposition chamber; orthe side chamber is a process chamber inside which the substrate is processed, and the lead-through connection is a substrate lead-through connection via which the web-like substrate transported between the process chamber and the deposition chamber; orthe apparatus is a process line, the deposition chamber forming a deposition unit in the process line and the side chamber is a process unit or process chamber in the process line arranged before or after the deposition chamber.22. The apparatus according to claim 21 , wherein the apparatus comprises:the side chamber or the loading chamber and a transport mechanism arranged to transport the web-like substrate from the side chamber or the loading chamber to the deposition chamber and from the deposition chamber to the side chamber or the loading chamber via the substrate lead-through ...

FACILITY FOR TREATING THE SURFACE OF A MOVING SUBSTRATE IN A CONTROLLED ATMOSPHERE, AND METHOD FOR DEFINING THE SIZE THEREOF

This facility comprises a support () for the substrate, a pressing roll (), capable of pressing the substrate against said support, a treatment unit positioned downstream of the pressing roll, with reference to the direction of travel of the substrate, said unit comprising injection means () for injecting a treatment gas towards said support and means () for transforming the surface of the moving substrate. According to the invention, this facility further comprises a containment cover () open in the direction of the support, this cover and this support defining an inner volume in which said treatment unit is received, this cover comprising a front wall called the upstream wall (), facing towards said pressing roll, wherein the smallest distance (d) between the end edge (′) of said upstream front wall and the pressing roll, the smallest distance (d) between said upstream front wall () and the treatment unit and the smallest distance (d) between the upstream end () of the treatment unit and the support (), are such that they define a recirculation volume (VR) for the treatment gas, defined by the end edge of said upstream front wall, the pressing roll, the support and the upstream end of the treatment unit. 1. Facility for treating the surface of a moving substrate (SUB) , comprising{'b': 1', '101', '201, 'a support (; ; ) for the substrate,'}{'b': 2', '102', '202, 'a pressing roll (; ; ) able to press the substrate against said support'}a treatment unit positioned downstream of the pressing roll, with reference to the direction of travel of the substrate, said unit comprising{'b': 37', '137', '137', '137', '237', '237, 'injection means (; , ′, ″; , ′) for injecting a treatment gas towards said support;'}{'b': 8', '108', '108', '108', '208', '208, 'means (; , ′, ″; , ′) for transforming the surface of the moving substrate; characterized in that this facility further comprises'}{'b': 4', '104', '204', '42', '142', '242', '42', '142', '242', '42', '142', '242', '2', ' ...

POST-DISCHARGE PLASMA COATING DEVICE FOR WIRED SUBSTRATES

A post-discharge plasma coating device for a wired substrate comprising an inner tubular electrode on an inner tubular wall for receiving the substrate and a precursor moving axially in a working direction; an outer tubular electrode coaxial with, and surrounding, the inner tubular electrode. The inner and outer electrodes are configured to be supplied with an electrical power source for producing a plasma when a plasma gas is supplied between the electrodes and is thereby excited, the plasma excited gas flowing axially in the working direction and reacting with the precursor in a coating area at the end of the inner tubular wall in the direction. The inner tubular wall extends axially towards the coating area at least until, in various instances beyond, the end of the outer electrode, in the working direction and at least one dielectric tubular wall extends axially between the inner tubular electrode and the outer tubular electrode. 119.-. (canceled)20. A post-discharge plasma coating device for a wired substrate , said device comprising:an inner tubular electrode on an inner tubular wall for receiving a substrate and a precursor moving axially in a working direction; andan outer tubular electrode coaxial with, and surrounding, the inner electrode;wherein the inner and outer electrodes are configured to be supplied with an electrical power source for producing a plasma when a plasma gas is supplied between the electrodes and is thereby excited, the plasma excited gas flowing axially in the working direction and reacting with the precursor in a coating area at the end of the inner tubular wall in the working direction; andwherein the inner tubular electrode extends axially towards the coating area at least until the end of the outer electrode in the working direction and in that at least one dielectric tubular wall extends axially between the inner electrode and the outer electrode.21. The post-discharge plasma coating device according to claim 20 , wherein the ...

Sputtering device and method for replacing film roll in sputtering device

In a sputtering device, a supply-side film roll chamber includes a supply-side vacuum pump and a supply-side main valve. A storage-side film roll chamber includes a storage-side vacuum pump and a storage-side main valve. A supply-side load-lock valve is provided between the supply-side film roll chamber and a layer forming chamber. A storage-side load-lock valve is provided between the storage-side film roll chamber and the layer forming chamber. In a method for replacing a film roll, a supply-side main valve and a supply-side load-lock valve are closed when replacing a supply-side film roll. A storage side-main valve and a storage-side load-lock valve are closed when replacing a storage-side film roll.

Method for controlling the deposition rate of thin films in a vacuum multi-nozzle plasma system and a device for performing of the method

A method of controlling deposition rate of a film deposition in a vacuum multi-plasma-jet system utilizing plasma-chemical reactions in an active discharge zone, wherein the system comprises at least one series of plasma nozzles, the working tubes of which are terminated by a hollow cathode whose mouth is located in the vicinity of the top area of the holding system with the stored substrate, wherein the principle of the solution consists in the deposition of the thin film on the substrate after the individual ignition of the discharges in each plasma nozzle and in the control of their parameters by means of external sources of voltage, the temperature of each hollow cathode is monitored by means of contactless temperature measurement and based on the evaluation of the measured temperature values, the settings of the discharge parameters is provided, with help of an control unit, in particular it is regulated the effective current in each of the plasma nozzles so that the deposition rates of all the hollow cathodes of the plasma nozzles are the same. A device to provide a method for controlling the deposition rate is also provided.

PLASMA PROCESSING APPARATUS

A plasma processing apparatus includes a vacuum container, a conveyance unit including a rotator and circulating and carrying a workpiece through the conveyance path, a cylindrical member having an opening at one end extended in the direction toward the conveyance path, a window member provided at the cylindrical member, and dividing a gas space from the exterior thereof, a supply unit supplying the process gas in the gas space, and an antenna generating inductive coupling plasma on the workpiece. The supply unit supplies the process gas from plural locations where a passing time at which the surface of the rotator passes through a process region is different, and the plasma processing apparatus further includes an adjusting unit individually adjusting the supply amounts of the process gas from the plural locations of the supply unit per a unit time in accordance with the passing time. 1. A plasma processing apparatus comprising:a vacuum container capable of achieving a vacuumed interior;a conveyance unit that comprises a rotator provided in the vacuum container and rotating with a workpiece being mounted thereon, and circulates and carries the workpiece along a circular conveyance path by rotating the rotator;a cylindrical member having an opening at one end extended in a direction toward the conveyance path in the vacuum container;a window member provided at the cylindrical member, and dividing a gas space between the interior of the cylindrical member and the rotator where a process gas is introduced from an exterior;a supply unit supplying the process gas in the gas space; andan antenna installed near the window member and outside the gas space, and causing the process gas in the gas space to generate inductive coupling plasma for plasma processing on the workpiece passing through the conveyance path when power is applied,wherein:the supply unit supplies the process gas from plural locations where a passing time at which a surface of the rotator passes through a ...

APPARATUS AND METHODS FOR MODIFYING WEBS OF MATERIAL WITH PLASMA

Using electrostatic means, such as plasma, webs can be cut, and webs can be bonded together. A plasma is created and directed at an intervening poly or a nonwoven to sever the fabric, either continuously or intermittently, or to bond and sever two more material layers together. 1. A method for processing webs of material , the system comprising:providing at least one web of nonwoven material into a web processing system;supplying an anode and a cathode and a plasma between said anode and cathode; andpassing said at least one web of material through said plasma to process said at least one web of nonwoven material by bonding individual fibers of said nonwoven web of material;creating a disposable product at least in part from said at least one web of nonwoven material.2. A method according to claim 1 , said method further comprising carrying at least one of said anode and said cathode on a first rotating body claim 1 , carrying at least one of said anode and said cathode on a second rotating body and passing said at least one web through said plasma between said first and second rotating bodies.3. A method according to claim 2 , said plasma being generated between a first raised surface and a second raised surface claim 2 , wherein the first raised surface is on one of said first and second rotating bodies and the second raised surface is on the other of said first and second rotating bodies.4. A method according to claim 2 , said method further comprising severing a discrete piece from said at least one web of nonwoven material and drawing said discrete piece into at least one of said first and said second rotating bodies. This application is a division of co-pending U.S. patent application Ser. No. 15/054,802, filed 26 Feb. 2016, which claims the benefit of U.S. Provisional Patent Application No. 62/120,989, filed 26 Feb. 2015.This invention relates to a method and apparatus for rapidly and accurately modifying, such as by cutting or bonding, discrete articles or a ...

Film formation apparatus and film formation method

A film formation apparatus is configured so as to be equipped with: a film-forming chamber for forming a thin film using plasma on a substrate at a film formation position; an abnormal discharge-detecting section for detecting an abnormal discharge of the plasma; an imaging device for imaging abnormal plasma, which is the plasma when an abnormal discharge is detected, or an abnormal substrate surface, which is the substrate surface on which a thin film is formed when an abnormal discharge is detected; and a storage unit for storing the images taken by the imaging device.

Laminated film

A laminated film including: a substrate; and a thin film layer stacked on at least one surface of the substrate, the thin film layer containing silicon atoms, oxygen atoms, and carbon atoms, the thin film layer having at least three extrema, a difference between a maximum value of local maxima and a minimum value of the local maxima of 14 at % or less, and a maximum value of 23 at % to 33 at % in a carbon distribution curve that represents a relationship between a thickness-wise distance in the thin film layer from a surface of the thin film layer and a proportion of the number of carbon atoms (atomic proportion of carbon) to a total number of silicon atoms, oxygen atoms, and carbon atoms contained in the thin film layer at a point positioned away from the surface by the distance, and the thin film layer including at least one discontinuous region that satisfies a relationship of formulae (1) to (3), 3 at %≤ a−b   (1) 3 at %≤ b−c   (2) 0.5<( a−c )/ dx   (3).

Composite conducting wire, method for manufacturing the same, and apparatus for manufacturing the same

An apparatus for manufacturing a composite conducting wire is provided, which includes a gas tube, a hydrocarbon gas source connected to a front part of the gas tube for providing hydrocarbon gas through the gas tube. The apparatus also includes a microwave generator to generate a microwave passing a middle part of the gas tube through a waveguide, such that the hydrocarbon gas in the middle part of the gas tube forms a microwave plasma torch. The apparatus includes a wire guide device to guide a metal wire pass through the middle part of the gas tube. The hydrocarbon gas is decomposed by the microwave plasma torch to form a graphene film wrapping a surface of the metal wire.

PLASMA REACTOR WITH ELECTRODE FILAMENTS

A plasma reactor includes a chamber body having an interior space that provides a plasma chamber and having a ceiling, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece facing the ceiling, an intra-chamber electrode assembly that includes an insulating frame and a filament extending laterally through the plasma chamber between the ceiling and the workpiece support, the filament including a conductor at least partially surrounded by an insulating shell that extends from the insulating frame, and a first RF power source to supply a first RF power to the conductor of the intra-chamber electrode assembly. 1. A plasma reactor comprising:a chamber body having an interior space that provides a plasma chamber and having a ceiling;a gas distributor to deliver a processing gas to the plasma chamber;a pump coupled to the plasma chamber to evacuate the chamber;a workpiece support to hold a workpiece facing the ceiling;an intra-chamber electrode assembly comprising an insulating frame and a filament extending laterally through the plasma chamber between the ceiling and the workpiece support, the filament including a conductor at least partially surrounded by an insulating shell that extends from the insulating frame; anda first RF power source to supply a first RF power to the conductor of the intra-chamber electrode assembly.2. The plasma reactor of claim 1 , wherein the insulating shell comprises a cylindrical shell that surrounds and extends along an entirety of the conductor within the plasma chamber.3. The plasma reactor of claim 1 , wherein the insulating shell is formed from silicon claim 1 , or an oxide claim 1 , nitride or carbide material claim 1 , or a combination thereof.4. The plasma reactor of claim 3 , wherein the insulating shell is formed from silica claim 3 , sapphire or silicon carbide.5. The plasma reactor of claim 1 , wherein the ...

Plasma reactor with electrode filaments extending from ceiling

A plasma reactor includes a chamber body having an interior space that provides a plasma chamber and having a ceiling, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, and an intra-chamber electrode assembly. The intra-chamber electrode assembly includes an insulating frame, a first plurality of coplanar filaments that extend laterally through the plasma chamber between the ceiling and the workpiece support along a first direction, and a second plurality of coplanar filaments that extend in parallel through the plasma chamber along a second direction perpendicular to the first direction. Each filament of the first and second plurality of filaments includes a conductor at least partially surrounded by an insulating shell. A first RF power source supplies a first RF power to the conductor of the intra-chamber electrode assembly.

Apparatus and Methods for Defining a Plasma

Apparatus comprising: a support arranged to transport a moving substrate; a plasma generator arranged to generate plasma; and an electrode arranged to bias ions within the plasma towards the moving substrate to form an ion flux. The ion flux has an energy level between 3.6 eV and 250 eV. Alternatively, apparatus for defining plasma having a plurality of spaced race track portions. 1. An apparatus comprising:a support arranged to transport a moving substrate;a plasma generator arranged to generate plasma;an electrode arranged to bias ions within the plasma towards the moving substrate to form an ion flux, wherein the ion flux has an energy level between 3.6 eV and 250 eV.2. The apparatus of claim 1 , further comprising a delivery device arranged to deliver radiation curable material to the substrate claim 1 , the apparatus being arranged such that the radiation curable material condenses on the substrate.3. The apparatus of claim 1 , further comprising a magnet array arranged to spatially define the plasma.4. The apparatus of claim 1 , wherein the electrode and plasma generator are arranged to provide a unit energy dose which is no greater than 15 J/cm.5. The apparatus of claim 1 , wherein the support is arranged to move the substrate at a speed through the ion flux such that the dwell time is no greater than 5 minutes.6. The apparatus of claim 1 , further comprising a gas delivery system arranged to deliver a primary gas from which the plasma is generated and one or more further gases that are distinct from the primary gas.7. A method comprising:providing a moving substrate;generating a plasma; andbiasing ions within the plasma towards the moving substrate to form an ion flux, the ion flux having an energy level between 3.6 eV and 250 eV.8. The method of claim 7 , further comprising condensing a radiation curable material on the substrate and curing the radiation curable material with the ion flux.9. The method of claim 7 , whereby the substrate is moving at a line ...

BATCH TYPE SUBSTRATE PROCESSING APPARATUS

Provided is a substrate processing apparatus. The substrate processing apparatus includes a tube configured to provide a processing space, a partition wall configured to provide a discharge space in which plasma is generated, a gas supply pipe configured to supply a process gas to the discharge space, and a plurality of electrodes configured to generate plasma in the discharge space. At least one of the plurality of electrodes is disposed outside the partition wall, and at least one of the plurality of electrodes is disposed inside the partition wall. 1. A batch type substrate processing apparatus comprising:a tube configured to provide a processing space in which a plurality of substrates are accommodated;a partition wall which is separated from the processing space, provides a discharge space in which plasma is generated, and extends in a longitudinal direction of the tube;a gas supply pipe configured to supply a process gas required for processing the plurality of substrates to the discharge space; anda plurality of electrodes extending in the longitudinal direction of the tube and configured to generate plasma in the discharge space,wherein at least one of the plurality of electrodes is disposed outside the partition wall, and at least one of the plurality of electrodes is disposed inside the partition wall.2. The batch type substrate processing apparatus of claim 1 , wherein the plurality of electrodes comprise:a first electrode disposed outside the partition wall; anda second electrode disposed inside the partition wall,wherein the first electrode is connected to an RF power source, and the second electrode is grounded.3. The batch type substrate processing apparatus of claim 2 , wherein the first electrode claim 2 , the second electrode claim 2 , and the gas supply pipe are spaced apart from each other in the circumferential direction of the tube claim 2 , andthe gas supply pipe is disposed outside the partition wall.4. The batch type substrate processing ...

Film forming apparatus and film forming method

A film forming apparatus includes: a processing chamber; a sputtered particle emitter; a substrate mounting unit; and a sputtered particle shielding plate that is provided between the sputtered particle emitter and the substrate mounting unit and has a passage hole that allows the sputtered particles emitted from the sputtered particle emitter to pass through and allows the sputtered particles to be obliquely incident on a substrate mounted on the substrate mounting unit.

Film forming apparatus, method for manufacturing film-formed product, and method for manufacturing electronic component

A film forming apparatus includes a chamber that is a container in which a sputter gas is introduced, a carrying unit provided inside the chamber, and circulating and carrying a work-piece on a trajectory of a circular circumference, and a film formation processing unit including a sputter source depositing, on the work-piece circulated and carried by the carrying unit, a film formation material by sputtering to form a film, and a dividing member dividing a film forming position where the film is formed on the work-piece by the sputter source. The dividing member is installed so as to divide the film forming position in a way that, in the trajectory of the circular circumference, a trajectory of passing through a region other than the film forming position performing the film formation is longer than a trajectory of passing through the film forming position performing the film formation.

CARRIER WITH VERTICAL GRID FOR SUPPORTING SUBSTRATES IN COATER

Various embodiments herein relate to carriers for supporting one or more substrate as the substrates are passed through a processing apparatus. In many cases, the substrates are oriented in a vertical manner The carrier may include a frame and vertical support bars that secure the glass to the frame. The carrier may lack horizontal support bars. The carrier may allow for thermal expansion and contraction of the substrates, without any need to provide precise gaps between adjacent pairs of substrates. The carriers described herein substantially reduce the risk of breaking the processing apparatus and substrates, thereby achieving a more efficient process. Certain embodiments herein relate to methods of loading substrates onto a carrier. 1. A carrier for holding at least one substrate in a substantially vertical orientation while passing through a coater that provides a coating on at least a front surface of the at least one substrate , the carrier comprising:a bottom tap bar;a top tap bar;a plurality of vertical support bars, each vertical support bar having a length permitting engagement with both the top tap bar and the bottom tap bar, wherein the plurality of vertical support bars comprise at least a leftmost and a rightmost vertical support bar, and wherein the plurality of vertical support bars in combination with the bottom and top tap bars define one or more aperture; anda plurality of attachments for engaging with the bottom tap bar and the top tap bar to permit horizontal movement of at least one of the plurality of vertical support bars along the bottom and top tap bars.2. The carrier of claim 1 , further comprising a plurality of fasteners for fastening ends of the substrate to the vertical support bars claim 1 ,wherein each vertical support bar has a plurality of fastener attachment positions for attaching to the plurality of fasteners at a plurality of vertical positions.3. The carrier of claim 1 , wherein each vertical support bar engages with the ...

Substrate supports for a sputtering device

A sputtering device and method including a chamber, a target disposed within the chamber, and a substrate support including at least a portion consisting essentially of a non-aluminous and non-magnetic metallic material disposed within the chamber. The substrate support may include a carrier and a fixture for holding a substrate. In some embodiments, at least the target-facing surface of the carrier consists essentially of a non-aluminous and non-magnetic metallic material. In some embodiments, the fixture consists essentially of a non-aluminous and non-magnetic metallic material. The sputtering device may be drum sputtering device. The sputtering method may be a magnetron sputtering method.

PLANETARY GEAR ASSEMBLY FOR SPUTTERING MULTIPLE BALLOON CATHETER DISTAL ENDS

An apparatus includes an assembly and hollow templates. The assembly includes multiple rods or shafts mounted thereon. The assembly is configured to rotate about a first axis, and each of the rods or shafts is additionally configured to rotate about a respective second axis. The hollow templates are fitted on the respective rods or shafts and are each configured to contain a balloon-based distal end of a medical instrument, each template having a patterned opening through which one or more electrodes are deposited on the distal end. 1. A method for producing medical instruments , the method comprising:inserting into multiple hollow templates respective balloon-based distal ends of the medical instruments;fitting the hollow templates on multiple respective rotatable rods that are mounted on a rotatable assembly;rotating the distal ends by simultaneously rotating the assembly about a first axis and each of the rods about a respective second axis; anddepositing, through patterned openings in the templates, electrodes on the rotated distal ends.2. The method according to claim 1 , wherein inserting the balloon-based distal ends comprises inserting inflatable balloons made from polyethylene terephthalate (PET).3. The method according to claim 1 , wherein inserting the balloon-based distal ends comprises inflating the balloon-based distal ends with an inert gas.4. The method according to claim 1 , wherein depositing the electrodes comprises sputtering atoms or ions through the patterned openings.5. The method according to claim 4 , wherein sputtering the atoms or ions comprises impinging electrons or ions on a sputtering target.6. The method according to claim 1 , and comprising claim 1 , before depositing the electrodes through the patterned openings claim 1 , attaching external surfaces of the balloon-based distal ends to internal surfaces of the hollow templates claim 1 , by creating vacuum around the balloon-based distal ends.7. The method according to claim 1 , ...

Shaped Electrodes For Improved Plasma Exposure From Vertical Plasma Source

Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode. The RF hot electrode can include a leg and optional triangular portion near the leg that extends at an angle to the body of the RF hot electrode. A cladding material on one or more of the RF hot electrode and the return electrode can be variably spaced or have variable properties along the length of the plasma gap.

Timing apparatus and method to selectively bias during sputtering

A system and method for sputtering using a plurality of different bias voltages, a plurality of target-cathodes that can be powered at different voltages disposed along said path of travel, and a controller configured to selectively vary the target-cathode voltage and the pallet bias voltage while the pallet moves along the path of travel. The target-cathodes are spaced apart along the path of travel by a distance less than a length of the pallet and on both sides of the path of travel. The controller can include a timing circuit for synchronizing changes in the target-cathode voltages with changes in the pallet bias voltage.

Timing apparatus and method to selectively bias during sputtering

A system and method for sputtering using a plurality of different bias voltages, a plurality of target-cathodes that can be powered at different voltages disposed along said path of travel, and a controller configured to selectively vary the target-cathode voltage and the pallet bias voltage while the pallet moves along the path of travel. The target-cathodes are spaced apart along the path of travel by a distance less than a length of the pallet and on both sides of the path of travel. The controller can include a timing circuit for synchronizing changes in the target-cathode voltages with changes in the pallet bias voltage.

Graphene roll-to-roll coating apparatus and graphene roll-to-roll coating method using the same

There are provided a graphene roll-to-roll coating apparatus and a graphene roll-to-roll coating method on the basis of a continuous process.

Thin film forming apparatus and method for forming thin film

Apparatus for manufacturing photovoltaic devices

溅射阴极、溅射装置和成膜体的制造方法

本发明涉及溅射阴极、溅射装置和成膜体的制造方法。溅射阴极具有溅射靶，所述溅射靶具有横截面形状具有相互相对的一对长边部的管状的形状且侵蚀面朝向内侧。使用该溅射阴极，在由溅射靶包围的空间的上方，使具有宽度比溅射靶的长边部窄的成膜区域的被成膜体与溅射靶的一端面平行地且沿与长边部垂直的方向以恒定速度移动，同时进行放电使得产生沿着溅射靶的内表面环绕的等离子体，利用由溅射气体产生的等离子体中的离子使溅射靶的长边部的内表面进行溅射，从而在被成膜体的成膜区域进行成膜。

プラズマ化学蒸着用ガスインジェクター

(57)【要約】 【課題】 プラズマ化学蒸着用のガスインジェクターを 提供する。 【解決手段】 ポート（４２）の回りに絶縁材料を有す るガスインジェクター（１２）の使用は、プラズマ化学 蒸着に使用するとき、プラズマトーチがガスインジェク ター（１２）に形成されず、且つ、ガスが早期に電離し ないという、利点を有する。このことが被覆の品質に加 わり、装置を高アンペアで、かくして高ライン速度で使 用することができる。ポートで絶縁プラグ（４２）を使 用することは、ポートを容易に修理し、且つ、交換する ことができる。

Substrate processing apparatus

본 발명은 처리 용기 내에서의 가스의 흐름의 치우침을 억제하는 것을 제공한다. 복수의 기판을 선반 형상으로 유지하는 기판 유지구와, 복수의 기판 및 기판 유지구를 수용하는 내통과, 내통의 외측에 배치되는 외통을 갖는 처리 용기와, 처리 용기 내에 수용되는 복수의 기판의 피처리면에 대하여 평행하게 처리 가스를 공급하는 가스 공급 수단과, 가스 출구를 통해서 처리 용기 내의 처리 가스를 배기하는 배기 수단과, 기판 유지구를 개재해서 가스 공급 수단에 대향하는 측의 내통 측벽에 형성되는 배기구와, 처리 용기의 둘레 방향에 있어서 배기구와 가스 출구와의 사이의 내통의 외주벽 또는 외통의 내주벽에 설치되는 정류판을 구비하고, 정류판은, 기판 유지구의 하단에 대응하는 위치보다도 하방으로부터, 적어도 배기구의 하단에 대응하는 위치까지 상방을 향해서 연장되도록, 처리 용기의 연직 방향을 따라서 설치되는, 기판 처리 장치가 제공된다. The present invention provides suppressing the bias of the gas flow in the processing vessel. A substrate holder for holding a plurality of substrates in a form of a shelf; an inner passage for accommodating the plurality of substrates and the substrate holder; a processing container having an outer cylinder disposed outside the inner cylinder; Which is formed on the inner wall side wall of the side opposite to the gas supply means via the substrate holding port, for discharging the processing gas in the processing vessel through the gas outlet; And a rectifying plate provided on an outer peripheral wall of an inner cylinder or an inner peripheral wall of an outer cylinder between the exhaust port and the gas outlet in the circumferential direction of the processing container, wherein the rectifying plate is disposed below the position corresponding to the lower end of the substrate holding opening , And is provided along the vertical direction of the processing container so as to extend upward at least to a position corresponding to the lower end of the exhaust port The processing apparatus is provided.

System for processing substrate

The present invention relates to a system for processing a substrate and, more specifically, relates to a system for processing a substrate having a plurality of process tubes. According to an embodiment of the present invention, the system for processing a substrate comprises: first and second process tubes arranged to be spaced in a first axial direction, and providing an independent space with each other; a substrate boat in which a plurality of substrates are stacked, wherein the substrate boat is provided to each process space of the first and second process tubes; and first and second boat elevator provided to the first and second process tubes and elevating the substrate boat. Moreover, the first and second boat elevators can comprise an elevating member disposed in a space between the first and second process tubes.

移動基材のプラズマ表面処理の装置、方法および当該方法の使用

An apparatus for continuous plasma polymerizing with a vertical chamber

본 발명은 수직챔버를 구비한 플라즈마중합 연속처리장치에 관한 것으로서, 다수의 챔버를 구비하며, 챔버내부로 이동하는 기재의 표면에 플라즈마 중합에 의한 표면처리를 수행하는 플라즈마중합 연속처리장치에 있어서, 챔버 내에서 기재의 이동 방향이 수직이며 적어도 하나 이상의 전극을 포함하는 수직챔버를 적어도 하나 이상 포함하여 구성되는 수직챔버를 구비한 플라즈마중합연속처리장치를 제공한다. The present invention relates to a plasma polymerization continuous processing apparatus having a vertical chamber, comprising: a plasma polymerization continuous processing apparatus including a plurality of chambers and performing surface treatment by plasma polymerization on a surface of a substrate moving into the chamber. Provided is a plasma polymerization continuous processing apparatus having a vertical chamber configured to include at least one or more vertical chambers in which the moving direction of the substrate is vertical in the chamber and includes at least one or more electrodes.

Film forming device

Plasma cvd device

本发明的等离子CVD装置具备：真空腔室；真空排气部，将上述真空腔室内真空排气；气体供给部，向上述真空腔室内供给原料气体；等离子产生电源，使供给到上述真空腔室内的原料气体产生等离子；多个自转保持部，以自转的状态保持上述基材；和多个公转机构，使上述多个自转保持部绕与上述自转保持部的旋转轴轴心平行的公转轴公转；上述多个公转机构分别被分到第1组和第2组的任一个中，所述第1组连接在上述等离子产生电源的一个极上，所述第2组连接在上述等离子产生电源的另一个极上。

Photovoltage devices and deposition assembly

내용 없음. No content.

Substrate processing apparatus

本发明提供一种基板处理装置。基板处理装置包括：基板保持器具，呈搁板状保持多个基板；处理容器，具有用于收容多个基板以及基板保持器具的内筒、和配置于内筒的外侧的外筒；气体供给部件，与收容于处理容器内的多个基板的被处理面平行地向该被处理面供给处理气体；排气部件，经由气体出口对处理容器内的处理气体进行排气；排气口，设置于内筒的隔着基板保持器具与气体供给部件相对的那一侧的侧壁；整流板，设置于内筒的外周壁或外筒的内周壁的在处理容器的周向上位于排气口和气体出口之间的部分，整流板以从比与基板保持器具的下端相对应的位置靠下方的位置至少朝向上方延伸到与排气口的下端相对应的位置的方式沿着处理容器的铅垂方向设置。

Vacuumised coiling device

FIELD: electrical engineering. SUBSTANCE: chamber (15) is capable to maintain a vacuum state. The first electrode (18), roller-shaped, is installed inside the chamber (15) so that to enable rotation. The electrode (18) has the part the target product being treated (5) contacts and the part the target product being treated (5) fails to contact. The gas supply unit (20) includes the second electrode (23) mounted opposite the first electrode (18) inside the chamber and capable to supply process gas into the area between the product (5) and the second electrode (23). The third electrode (6) has a surface positioned opposite the first electrode (18) part the target product being treated (5) fails to contact. AC source (3) for supply of AC voltage into the area between the third electrode (6) and the first electrode (18). EFFECT: AC voltage is supplied to the roller electrode (18) in a contactless way so that no contact-induced wear occurs with electrodes service life extended. 8 cl, 3 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2 482 219 (13) C2 (51) МПК C23C 16/509 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (21)(22) Заявка: 2011122610/02, 27.10.2009 (24) Дата начала отсчета срока действия патента: 27.10.2009 (72) Автор(ы): ХИРОНО Такайоси (JP), ТАДА Исао (JP) (73) Патентообладатель(и): УЛВАК, ИНК. (JP) R U Приоритет(ы): (30) Конвенционный приоритет: 05.11.2008 JP 2008-283914 (43) Дата публикации заявки: 20.12.2012 Бюл. № 35 2 4 8 2 2 1 9 (45) Опубликовано: 20.05.2013 Бюл. № 14 2 4 8 2 2 1 9 R U (85) Дата начала рассмотрения заявки PCT на национальной фазе: 06.06.2011 C 2 C 2 (56) Список документов, цитированных в отчете о поиске: JP 2008-031521 А, 14.02.2008. RU 54375 U1, 27.06.2006. RU 2285912 C2, 20.10.2006. RU 2167955 C1, 27.05.2001. RU 2208658 C2, 20.07.2003. JP 09-228054 A, 02.09.1997. JP 3183782 A, 09.08.1991. JP 51112489 A, 04.10.1976. WO 02/086932 A1, 31.10.2002. (86) Заявка PCT: JP 2009/005652 (27.10.2009) (87) ...

Glass pallet for sputtering systems

Pallets for transporting one or more glass substrates in a substantially vertical orientation through a sputtering system. In some cases, a pallet comprising a frame with an aperture and an adjustable grid array within the aperture. The adjustable grid array is configurable to hold a plurality of glass substrates of different shapes and/or sizes. In one case, the adjustable grid array comprises a system of vertical and horizontal support bars, wherein the vertical support bars configured to both support the plurality of glass substrates at their vertical edges, wherein the horizontal support bars are configured to support the plurality of glass substrates at their horizontal edges, wherein the ends of the horizontal support bars are slideably engaged with the vertical support bars.

Apparatus of treating plasma and method of treating plasma subatrate using the same

플라즈마 처리 장치는 기판 지지 유닛, 플라즈마 유닛, 제1 회전 구동 유닛 및 가스 공급부를 포함한다. 상기 기판 지지 유닛은 기판을 지지한다. 상기 플라즈마 유닛은 플라즈마를 생성하고, 상기 플라즈마 유닛은 상기 생성된 상기 플라즈마를 상기 기판 측으로 제공한다. 상기 제1 회전 구동 유닛은 상기 플라즈마 유닛과 결합되어 상기 플라즈마 유닛을 상기 기판 지지 유닛에 대해 회전시킨다. 상기 가스 공급부는 상기 플라즈마 유닛 측으로 소오스 가스를 제공한다. 상기 플라즈마 유닛은, 바디, 상기 바디에 내장되는 제1 전극, 상기 바디에 내장되어 상기 제1 전극과 마주하는 제2 전극, 및 상기 제1 전극과 상기 제2 전극 사이에 상기 소오스 가스가 흐르는 배관을 포함한다. The plasma processing apparatus includes a substrate supporting unit, a plasma unit, a first rotation driving unit, and a gas supply unit. The substrate support unit supports the substrate. The plasma unit generates plasma, and the plasma unit provides the generated plasma to the substrate. The first rotation driving unit is coupled to the plasma unit to rotate the plasma unit relative to the substrate support unit. The gas supply unit provides a source gas to the plasma unit. The plasma unit includes a body, a first electrode built into the body, a second electrode built into the body to face the first electrode, and a pipe through which the source gas flows between the first electrode and the second electrode. includes

Device for continuous film forming

FIELD: machine building. ^ SUBSTANCE: settling drums (2 and 3) of device are arranged opposite and parallel to each other to ensure padding S wound on them facing each drum. Elements 12 and 13 generate magnetic field converging plasma to surface of the drum facing gap 5 between the drums. The said elements are installed in each drum 2 and 3 for sedimentation. The device is equipped with source of plasma 14, polarity of which is alternately reversed between one electrode and another electrode. Pipe 8 supplies gas for formation of film into gap 5. The gap is vacuumised with a device for vacuumising. One electrode of source 14 of plasma feed is connected with one settling drum 2, while its another electrode is connected with another settling drum 3. ^ EFFECT: reduced sedimentation of film on internal part of vacuum chamber and prevention of film de-lamination. ^ 5 cl, 7 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2 417 275 (13) C1 (51) МПК C23C 16/54 (2006.01) C23C 16/513 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (21)(22) Заявка: 2009134196/02, 15.01.2008 (24) Дата начала отсчета срока действия патента: 15.01.2008 (73) Патентообладатель(и): КАБУСИКИ КАЙСЯ КОБЕ СЕЙКО СЕ (JP) R U Приоритет(ы): (30) Конвенционный приоритет: 13.02.2007 JP 2007-031585 (72) Автор(ы): ТАМАГАКИ Хироси (JP) (45) Опубликовано: 27.04.2011 Бюл. № 12 2 4 1 7 2 7 5 (56) Список документов, цитированных в отчете о поиске: JP 2003-0499273 A, 21.02.2003. RU 2208658 C2, 20.07.2003. RU 2167955 C2, 10.04.2001. RU 2024647 C1, 15.12.1994. JP 3183782 A, 09.08.1991. JP 51112489 A, 04.10.1976. WO 02/086932 A1, 31.10.2002. 2 4 1 7 2 7 5 R U (86) Заявка PCT: JP 2008/050348 (15.01.2008) C 1 C 1 (85) Дата начала рассмотрения заявки PCT на национальной фазе: 14.09.2009 (87) Публикация заявки РСТ: WO 2008/099630 (21.08.2008) Адрес для переписки: 129090, Москва, ул.Б.Спасская, 25, стр.3, ООО "Юридическая фирма Городисский и Партнеры", А.В. ...

In-line plasma CVD device

提供一种即使持续长时间使用也不花费清扫等工夫、能够在维持稳定的成膜条件的同时以高生产效率进行成膜处理的等离子体化学气相沉积装置（100）。等离子体化学气相沉积装置（100）包括成膜室（1）和与成膜室（1）分开的加载互锁真空室（20、30），是在这些室间输送基材并在基材上生成成膜的连续式。成膜室（1）包括真空腔室（2）、将真空腔室（2）内的空气排出的真空排气机构（3）、向真空腔室（2）内供给原料气体的气体供给部（9）、和使真空腔室（2）内产生等离子体的等离子体产生电源（10）。在成膜室（1）中，基材被分为与等离子体产生电源（10）的一极连接的第1组（18）、和与等离子体产生电源（10）的另一极连接的第2组（19），在相互为不同极性的第1组（18）的基材与第2组（19）的基材之间产生等离子体。

IMPROVED PLASMA REACTOR PROVIDED WITH ELECTROMAGNETIC WAVE COUPLING MEANS

Device and method for producing microwave plasma with a high plasma density

The invention relates to a device for producing microwave plasma with a high plasma density, comprising at least one microwave supply that is surrounded by an outer dielectric tube (3). Said microwave supply is surrounded by, in addition to the outer dielectric tube (3), at least one inner dielectric tube (2) that extends inside the outer dielectric tube (3). Said tubes (2, 3) form at least one area that is suitable for receiving and conducting a fluid. The above mentioned device can be cooled by means of a fluid. A process gas can be fed (7) into the plasma region by the outer dielectric tube (3).

Continuous film forming apparatus

一种连续成膜装置，具有：一对成膜辊(2)、(3)，以所卷架的基材(S)对置的方式，平行地对置配置；磁场产生构件(12)、(13)，设置在所述各成膜辊(2)、(3)的内部，以使等离子体收敛于与所述成膜辊之间的对置空间(5)相面对的辊表面附近的方式产生磁场；等离子体电源(14)，其一个电极与另一个电极的极性交替地反转；气体供给管(8)，对所述对置空间(5)供给成膜气体；以及真空排气单元，对所述对置空间进行真空排气。所述等离子体电源(14)的一个电极与一个成膜辊(2)连接，另一个电极与另一个成膜辊(3)连接。

System and method for cleaning surface of substrate using roll-to-roll plasma generating device

본 개시는 플라즈마 발생 장치를 이용하는 롤투롤 표면 세정 처리 시스템 및 방법을 제공한다. 이 시스템은, 제1 플라즈마 발생 장치 및 제1 플라즈마 발생 장치에 의해 생성된 플라즈마 빔이 토출되는 노즐과 대향하며 유연성 기재를 감아서 이송하는 제1 이송 롤러를 수용하며, 가스유입구, 유연성 기재가 유입되는 출입구 및 유연성 기재가 배출되는 배출구가 형성되어 있는 상부 하우징, 상부 하우징의 출입구와 연결되고, 제2 플라즈마 발생 장치 및 제2 플라즈마 발생 장치에 의해 생성된 플라즈마 빔이 토출되는 노즐과 대향하며 유연성 기재를 감아서 이송하는 제2 이송 롤러를 수용하며, 가스배출구 및 유연성 기재가 유입되는 유입구가 형성되어 있는 하부 하우징을 포함하며, 가스 유입구를 통해 저온 냉매 가스를 도입함으로써 상부 하우징이 저온의 분위기가 유지되도록 구성될 수 있다. The present disclosure provides a roll-to-roll surface cleaning treatment system and method using a plasma generating device. The system includes a first plasma generating device and a first transport roller facing the nozzle from which the plasma beam generated by the first plasma generating device is discharged and winding and transporting the flexible substrate, the gas inlet and the flexible substrate are introduced An upper housing having an outlet and an outlet through which the flexible substrate is discharged, connected to the inlet of the upper housing, and facing the second plasma generating device and the nozzle from which the plasma beam generated by the second plasma generating device is discharged, and facing the flexible substrate It accommodates a second conveying roller for winding and conveying, and includes a lower housing having a gas outlet and an inlet through which a flexible substrate is introduced, and the upper housing maintains a low-temperature atmosphere by introducing a low-temperature refrigerant gas through the gas inlet. It can be configured to be

Plasma processing apparatus of batch type

배치식 플라즈마 처리 장치는 폐쇄 단부와 이것에 대향하는 개방 단부를 갖는 동시에, 피처리 기판을 수납하는 처리 영역을 갖는 통체 형상의 처리 용기를 포함하고, 처리 용기는 통체 형상의 절연성 본체를 갖는다. 장치는 또한, 간격을 두고 피처리 기판을 유지하는 유지구와, 유지구를 처리 용기 내에 대해 반입 및 반출하는 로딩 기구와, 로딩 기구에 배치되어 개방 단부를 기밀하게 폐쇄하는 덮개부를 포함한다. 처리 용기의 폐쇄 단부에 제1 전극이 배치되고, 덮개부에 제2 전극이 배치되어, 제1 및 제2 전극은 평행 평판 전극쌍을 구성한다. 제1 및 제2 전극의 한쪽에 플라즈마 발생용 고주파 전력을 인가하는 고주파 전원이 접속된다. The batch plasma processing apparatus includes a tubular processing container having a closed end and an open end opposite thereto, and having a processing area for receiving a substrate to be processed, the processing container having a tubular insulating body. The apparatus also includes a holder for holding the substrate to be processed at intervals, a loading mechanism for carrying in and taking out the holder into the processing container, and a lid portion disposed in the loading mechanism to hermetically close the open end. A first electrode is disposed at the closed end of the processing container, and a second electrode is disposed at the lid portion, so that the first and second electrodes constitute a parallel plate electrode pair. A high frequency power source for applying high frequency power for plasma generation to one of the first and second electrodes is connected. 배치식 플라즈마 처리 장치, 유지구, 처리 용기, 피처리 기판, 고주파 전원 Batch type plasma processing apparatus, holder, processing vessel, substrate to be processed, high frequency power supply

Film formation device

提供一种能够不将成膜单元及其上游侧和下游侧单元上下重叠而确保作业空间的成膜装置。成膜装置包括成膜单元（16）、和配置在其左右的上游侧及下游侧单元（14、18）。成膜单元（16）具有：成膜辊（70）；多个引导辊（72）；主腔室（64），具有成膜辊收纳部（74）及其上侧的引导辊收纳部（76）；第1加工腔室和第2加工腔室（66、68），在成膜辊收纳部（74）的左右收纳多个成膜加工用设备（84、86）；和加工腔室支承部（104），将加工腔室（66、68）支承为，该加工腔室（66、68）能够在成膜用的通常位置与向左右退避的退避位置之间移动，并且能够在该退避位置与在前后方向上离开的露出位置之间移动。

sputtering device

본 발명은 스퍼터링 장치에 관한 것으로, 유도 결합 플라즈마 발생 장치를 이용하여 박막의 스텝 커버리지가 우수하고 치밀한 막질을 형성할 수 있는 스퍼터링 장치를 제공한다. 이를 위하여, 본 발명의 일실시 예에 따른 스퍼터링 장치는, 진공 배기 가능한 챔버; 피처리체의 탑재를 위하여 상기 챔버 내에 형성되는 탑재 수단; 외부로부터 유입되는 기체를 플라즈마(plasma)화하여 상기 챔버 내부로 유입시키기 위하여 상기 챔버의 일측에 형성되는 유도 결합 플라즈마(Inductively Coupled Plasma; ICP) 방출기; 및 상기 유입되는 플라즈마에 의하여 이온화될 타겟 물질을 탑재하기 위하여 상기 챔버 내에 형성되는 스퍼터 건(sputter gun)을 포함한다. 그럼으로써, 스텝 커버리지를 향상시키고 치밀한 막질을 얻을 수 있으며 저온 증착이 가능한 스퍼터링 장치를 제공할 수 있는 이점이 있다. 스퍼터링, 유도 결합 플라즈마, ICP

Foul prevented continuous surface treatment device of heat exchanger with gate valve

본 발명의 오염이 방지되도록 게이트 밸브가 설치되는 열교환기 표면처리장치는 조립되어진 열교환기(200)가 장착되는 캐리어(101)와, 그 캐리어(101)를 순차적으로 이송시키기 위한 이송부(103)와, 상기 캐리어(101)에 의하여 이송되는 열교환기(200)들의 전체 표면에 표면처리막을 연속적으로 형성시키기 위한 표면처리부(102)와, 그 표면처리부(102)의 양측에 배치되어 열교환기(200)들이 장착된 캐리어(101)를 표면처리부(102)에 로딩/언로딩하기 위한 트랜스퍼(104)와, 상기 캐리어(101)가 표면처리부(102)를 통과할때에 캐리어(101)에 장착된 열교환기(200)에 전원을 인가하기 위한 전원인가부(105)로 구성되는 표면처리장치에서, 상기 표면처리부(102)가 클리닝챔버(112), 중합챔버(113), 포스트챔버(114), 언로딩챔버(115)로 구성되고, 그 각 챔버들에는 게이트 밸브(116)를 설치하되, 그 게이트 밸브(116)를 중합챔버(113)를 중심으로 외측에 위치되도록 각각 설치하여, 중합챔버(113)에서 증착시 오-링의 소손에 의한 오염물질에 의해 오염발생이 방지된다. The heat exchanger surface treatment apparatus in which the gate valve is installed to prevent contamination of the present invention includes a carrier 101 on which the assembled heat exchanger 200 is mounted, a transfer part 103 for sequentially transferring the carrier 101, and The surface treatment part 102 for continuously forming the surface treatment film on the entire surface of the heat exchangers 200 carried by the carrier 101 and the heat treatment part 200 are disposed on both sides of the surface treatment part 102. Transfer 104 for loading / unloading the loaded carrier 101 to the surface treatment unit 102 and the heat exchanger mounted on the carrier 101 when the carrier 101 passes through the surface treatment unit 102. In the surface treatment apparatus consisting of a power supply unit 105 for applying power to the machine 200, the surface treatment unit 102 is a cleaning chamber 112, a polymerization chamber 113, a post chamber 114, It is composed of a loading chamber 115, each of which is equipped with a gate valve 116 But, in each installed so as to be located to the gate valve 116 on the outside around the polymerization chamber 113, Be deposition in the polymerization chamber 113 - the contamination is prevented by contaminants due to burn out of the ring.

Glass tray for spray systems

Изобретение относится к поддону для транспортировки одной или нескольких стеклянных подложек по существу в вертикальном положении через распылительную установки (варианты) и системе осаждения методом распыления. Поддон содержит раму с отверстием и регулируемую опорную матрицу в отверстии. Регулируемая опорная матрица выполнена с возможностью удержания множества стеклянных подложек различной формы и/или размеров. В одном из вариантов регулируемая опорная матрица состоит из системы вертикальных и горизонтальных опорных стержней, в которой вертикальные опорные стержни выполнены с возможностью поддержки множества стеклянных подложек на их вертикальных кромках, в которой горизонтальные опорные стержни выполнены с возможностью поддержки множества стеклянных подложек на их горизонтальных кромках, при этом концы горизонтальных опорных стержней соединены с возможностью скольжения с вертикальными стержнями. 9 н. и 27 з.п. ф-лы, 6 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (51) МПК C23C 14/34 C23C 14/50 C03B 25/12 B65G 13/02 (11) (13) 2 698 028 C2 (2006.01) (2006.01) (2006.01) (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (52) СПК C23C 14/34 (2013.01); C23C 14/50 (2013.01); C03B 25/12 (2013.01); B65G 13/02 (2013.01) (21)(22) Заявка: 2015154983, 09.06.2014 (24) Дата начала отсчета срока действия патента: Дата регистрации: (73) Патентообладатель(и): ВЬЮ, ИНК. (US) 21.08.2019 10.06.2013 US 61/833,366 (43) Дата публикации заявки: 13.07.2017 Бюл. № 20 (45) Опубликовано: 21.08.2019 Бюл. № 24 (56) Список документов, цитированных в отчете о поиске: US 8092607 B2, 10.01.2012. RU 2297988 C1, 27.04.2007. SU 1616861 A2,30.12.1990. SU 1491821 А1, 07.07.1989. SU 1719327 A1, 15.03.1992 . US 4626207 A, 02.12.1986. US 3942967 A, 09.03.1976. (85) Дата начала рассмотрения заявки PCT на национальной фазе: 11.01.2016 2 6 9 8 0 2 8 Приоритет(ы): (30) Конвенционный приоритет: R U 09.06.2014 (72) Автор(ы): ФРЭНК, Тревор (US), РОЗБИКИ, Роберт Т. (US), САТЕРН, ...

Film formation apparatus, method for manufacturing a product with film formed and method for manufacturing a electric component

[과제] 냉각 수단을 이용하지 않아도, 전자 부품의 온도 상승을 억제하여, 마이크론 레벨의 성막을 할 수 있는 성막 장치, 성막 제품의 제조 방법 및 전자 부품의 제조 방법을 제공한다. [해결수단] 스퍼터 가스(G)가 도입되는 용기인 챔버(200)와, 챔버(200) 내에 마련되어, 워크(W)를 원주의 궤적으로 순환 반송하는 반송부(300)와, 반송부(300)에 의해 순환 반송되는 워크(W)에, 스퍼터링에 의해 성막 재료를 퇴적시켜 성막하는 스퍼터원(4)을 가지며, 스퍼터원(4)에 의해 워크(W)가 성막되는 성막 포지션(M)을 구획하는 구획부를 갖는 성막 처리부(400)를 갖는다. 구획부(5)는, 원주의 궤적 중, 성막 중의 성막 포지션(M)을 통과하는 궤적보다, 성막 중의 성막 포지션(M) 이외의 영역을 통과하는 궤적이 길어지도록, 각 성막 처리부(400)를 구획하도록 배치되어 있다.

Device for plasmochemical sedimentation from vapor phase of winding type

FIELD: metallurgy. SUBSTANCE: invention relates to device for plasmochemical sedimentation from vapor phase of winding type for formation of coating layer on film. Film (22) is kept between couple of mobile drums, located at side of outlet and side of inlet of sedimentation section (25) relative to direction of movement of film (22). Then film (22) is forced to move linear into place of sedimentation. Distance between lattice for dispersion (37) and film (22) is kept constant, and quality of layer is homogeneous. Film is heated by means of metallic strip (40), simultaneously moving at reverse side of film. Movable drums are lifted from the position of sedimentation into position of self-cleaning, and film (22) can be separated from lattice for dispersion (37). Self-cleaning can be implemented on the way of sedimentation on film, closing slot of mask (51) by shutter (65) and, thereby, preventing dispersion of cleaning gas. EFFECT: invention provides receiving of layer's high quality ensured by feeding of reactionary gas evenly to sedimentation area of film, and it is possible to implemented self-cleaning process of sedimentation area on the way of sedimentation on film. 19 cl, 7 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2 371 515 (13) C2 (51) МПК C23C C23C C23C C23C 16/44 16/04 16/22 16/54 (2006.01) (2006.01) (2006.01) (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (21), (22) Заявка: 2007141737/02, 10.05.2006 (24) Дата начала отсчета срока действия патента: 10.05.2006 (43) Дата публикации заявки: 20.05.2009 (73) Патентообладатель(и): УЛВАК, ИНК. (JP) (85) Дата перевода заявки PCT на национальную фазу: 09.11.2007 C 2 2 3 7 1 5 1 5 (86) Заявка PCT: JP 2006/309387 (10.05.2006) (87) Публикация PCT: WO 2006/121068 (16.11.2006) R U C 2 (56) Список документов, цитированных в отчете о поиске: JP 2002-15513 A, 24.05.2002. SU 522281 A, 07.10.1976. RU 2063473 C1, 10.07.1996. RU 2099440 C1, 20.12. ...

DEVICE AND METHOD OF NITROGEN SHEET FROM TEXTURED ELECTROTECHNICAL STEEL

РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2015 139 687 A (51) МПК C23C 8/38 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ЗАЯВКА НА ИЗОБРЕТЕНИЕ (21)(22) Заявка: 2015139687, 18.02.2014 (71) Заявитель(и): ДжФЕ СТИЛ КОРПОРЕЙШН (JP) Приоритет(ы): (30) Конвенционный приоритет: 18.02.2013 JP 2013-029356 (85) Дата начала рассмотрения заявки PCT на национальной фазе: 18.09.2015 (86) Заявка PCT: (87) Публикация заявки PCT: WO 2014/125839 (21.08.2014) R U (54) УСТРОЙСТВО И СПОСОБ АЗОТИРОВАНИЯ ЛИСТА ИЗ ТЕКСТУРИРОВАННОЙ ЭЛЕКТРОТЕХНИЧЕСКОЙ СТАЛИ (57) Формула изобретения 1. Устройство для азотирования листа из текстурированной электротехнической стали для непрерывного азотирования полосы непрерывно подаваемой после холодной прокатки и перед вторичным рекристаллизационным отжигом в линии производства листа из текстурированной электротехнической стали, содержащее зону азотирования для азотирования полосы; зону охлаждения для охлаждения полосы; и необязательную зону нагрева для нагрева полосы, расположенную перед зоной азотирования, при этом зона азотирования включает в себя положительные электроды для тлеющего разряда, расположенные напротив полосы, и отрицательные электроды для тлеющего разряда, расположенные вблизи полосы между положительными электродами и полосой, причем между положительными и отрицательными электродами генерируется тлеющий разряд, образующий плазму, подводимую к полосе для ее азотирования. 2. Устройство по п. 1, в котором в зоне азотирования поддерживается пониженное давление. 3. Устройство по п. 2, в котором по меньшей мере одна из зон нагрева и охлаждения имеет меньшую степень снижения давления, чем зона азотирования, и пониженное давление по сравнению с атмосферным давлением. 4. Устройство по п. 1, дополнительно содержащее предшествующую зону контроля Стр.: 1 A 2 0 1 5 1 3 9 6 8 7 A Адрес для переписки: 109012, Москва, ул. Ильинка, 5/2, ООО "Союзпатент" 2 0 1 5 1 3 9 6 8 7 JP 2014/000815 (18.02.2014) R U (43) Дата публикации заявки: 23.03 ...

Plasma cvd apparatus

감긴 기재(S)가 대향하도록 평행하게 대향하여 배치된 한 쌍의 성막롤(2, 3)과, 상기 각 성막 롤(2, 3)의 내부에 설치되어, 상기 성막 롤 사이의 대향 공간(5)에 면한 롤 표면 부근에 플라즈마를 수렴시키도록 자장을 발생시키는 자장 발생 부재(12, 13)와, 한쪽의 전극과 다른 쪽의 전극이 교대로 극성이 반전되는 플라즈마 전원(14)과, 상기 대향 공간(5)에 성막 가스를 공급하는 가스 공급관(8) 및 상기 대향 공간을 진공 배기하는 진공 배기 수단을 갖는다. 상기 플라즈마 전원(14)은, 그 한쪽의 전극이 한쪽의 성막 롤(2)에 접속되고, 다른 쪽의 전극이 다른 쪽의 성막 롤(3)에 접속된다. A pair of film-forming rolls 2 and 3 arranged in parallel to face each other so as to face the wound base material S, and provided in the interior of each of the film-forming rolls 2 and 3 to face an opposing space 5 between the film-forming rolls. Magnetic field generating members 12 and 13 for generating a magnetic field so as to converge the plasma in the vicinity of the roll surface facing the surface), a plasma power supply 14 in which one electrode and the other electrode are reversed in polarity, and the opposite And a gas supply pipe 8 for supplying the deposition gas to the space 5 and vacuum exhaust means for evacuating the opposing space. One electrode of the plasma power supply 14 is connected to one film forming roll 2, and the other electrode is connected to the other film forming roll 3. 기재, 성막 롤, 자장 발생 부재, 극성, 가스 공급관 Base material, film formation roll, magnetic field generating member, polarity, gas supply pipe