МИШЕНЬ ДЛЯ РАСПЫЛЕНИЯ, ИМЕЮЩАЯ УВЕЛИЧЕННУЮ ЭНЕРГЕТИЧЕСКУЮ СОВМЕСТИМОСТЬ

Изобретение относится к системе центрирования пластины, которая имеет пластину с держателем, в которой пластина центруется в держателе как при комнатной температуре, так и при более высоких температурах, независимо от теплового расширения пластины и держателя, и пластина может свободно расширяться в держателе при более высоких температурах. Изобретение относится в частности к мишени, имеющей рамочное крепление мишени, которое очень хорошо подходит для использования в источнике покрытия для покрытия мишени импульсным магнетронным распылением большой мощности. Технический результат - предотвращение разрушения мишени под воздействием гидростатического давления в охлаждающем трубопроводе. 2 н. и 4 з.п. ф-лы, 6 ил.

МИШЕНЬ ДЛЯ РАСПЫЛЕНИЯ, ИМЕЮЩАЯ УВЕЛИЧЕННУЮ ЭНЕРГЕТИЧЕСКУЮ СОВМЕСТИМОСТЬ

Cathodic sputtering apparatus with adjustable target

A cathodic sputter deposition apparatus has one or more sputter targets (32, 42, 52) which match the substrate (60). The targets can be inserted into one or more cavities (70, 80, 90) defined by one or more substrate faces (72, 74, 82, 84, 92, 94) to be coated. Preferably, the or each sputter cathode (30, 40, 50) is loosely mounted on a holder plate (15), so that the distance between the or each cathode and the holder plate can be varied. There is a tubular anode (37, 47, 57) which holds the insulated target at one end and which can be displaced through an opening in the holder plate (15). Also claimed is a magnetron sputter cathode for use in the above apparatus. The cathode includes a cylindrical target which has side and front sputter faces and which contains a cavity for accommodating a magnet. Further claimed is an arrangement for use in the above apparatus, comprising several individually controllable sputter cathodes with target surfaces matching the shape of the substrate to be ...

Target used in sputtering processes comprises a slanted surface formed around the body of the target in a region in which a sputtering surface and a peripheral surface of the body of the target cross each other

Target (T) comprises a slanted surface formed around the body of the target in a region in which a sputtering surface and a peripheral surface of the body of the target cross each other. An independent claim is also included for a sputtering process using the above target.

Plasma assisted sputter deposition.

A plasma-assisted sputter deposition system 1 comprising a reactor into which a process gas is introduced to be used for producing plasma and an annular electrode 2 made of a material for sputtering by said plasma. The lower surface of said annular electrode is arranged at an angle or parallel to the surface of a wafer 9 to be deposited with said material. Two or more circular magnets with different diameters 19a, 19b are arranged above the electrode. The magnets are arranged to have alternate polarities facing the electrode so as to generate one or more close loop magnetic flux lines 37 below the electrode. The electrode is connected to an electrical power source 10 and a wafer holder 5 for holding said wafer in a stationary position for film deposition is provided.

Cathode arc source with target feeding apparatus

Apparatus for feeding a target into a chamber of a cathode arc source, comprises support structure (22, 23, 24) attached to or integral with the cathode arc source (10), a cathode station (16, 17, 18) for receiving a target (18) in electrical connection with an arc power supply, wherein the cathode station is mounted for movement (21, 37) on the support structure, and means for movement of the cathode station (21, 37) relative to the chamber so as to feed the target into the chamber. The apparatus can also have means (27) in the chamber for removing an upper portion of the target. A graphite target for feeding into the source is a composite of at least inner and outer sections, said inner section comprising graphite powder and having a density in the range 1.7-2.0 g/cm3 and said outer section comprising graphite powder and having a density that is at least 0.1 g/cm3 less than that of the inner section.

Magnetron cathode for cathodic evaporation installations

A magnetron cathode for cathodic evaporation apparatus with a target holder (10) for releasably securing a plate-like target (9). The associated magnet arrangement (7) has pole faces (7c, 7d) for producing at least one circumferentially closed tunnel of magnetic field lines which overlaps the target. The magnet arrangement (7) is accommodated in a housing of non-ferromagnetic material which extends over the pole faces. To increase the utilization factor of the target material without the pole faces or housing parts participating in the atomization process, (a) the projections of the target (9 ) and the pole faces (7c, 7d) in a common plane parallel to the target face (9a) do not intersect each other, (b) in the zone of the pole faces (7c, 7d), the housing (16) is extended in the atomization direction in front of the target face (9a) or in the extreme case lies in the plane of the target face (9a), and (c) the housing (16) together with the magnet system (7) is electrically insulated as ...

MAGNETRON CATHODE

ROHRTARGET

PROCEDURE FOR COOLING TARGETS AS WELL AS COOLING EQUIPMENT FOR TARGETS.

Sputtering Target und Verfahren zur Herstellung

Die Erfindung betrifft ein Sputtering Target aus einer Mo-Legierung, die zumindest ein Metall der Gruppe 5 des Periodensystems enthält, wobei der mittlere Gehalt an Gruppe 5 Metall 5 bis 15 At% und der Mo-Gehalt 80 At% 5 betragen. Das Sputtering Target weist ein mittleres C/O Verhältnis in (At% I At%) von 1 auf. Die erfindungsgemäßen Sputtering Targets lassen sich durch Umformung herstellen und weisen ein verbessertes Sputterverhalten auf.

CATHODIC SPUTTERING TURNING CATHODE WITH SEVERAL TARGETS

TUBING TARGET

Processes for low pressure, cold bonding of solid lithium to metal substrates

Processes of bonding lithium plates to other metal substrates are provided, using lithium plates preformed with a surface having indentations imposed therein, wherein that surface is placed against the substrate, which reduces the force required to achieve interface bonding.

Processes for low pressure, cold bonding of solid lithium to metal substrates

Processes of bonding lithium plates to other metal substrates are provided, using lithium plates preformed with a surface having indentations imposed therein, wherein that surface is placed against the substrate, which reduces the force required to achieve interface bonding.

TARGET FOR A SPUTTERING SOURCE

A target for a sputtering source can be subdivided into a plurality of exchangeable target segments (9). Each target segment (9) contains coating material, wherein each target segment (9) borders on at least two adjacent target segments (9', 9"), wherein each target segment is connectable to a base body (2, 13, 15) by means of at most one securing means (7, 8, 10) ...

SPUTTERING TARGET HAVING INCREASED POWER COMPATIBILITY

The invention relates to a plate centering system, comprising a plate having a holder, wherein the plate is centered in the holder both at room temperatures and at higher temperatures, independently of the heat expansion of the plate and the holder, and wherein the plate can freely expand in the holder at higher temperatures. The invention relates in particular to a target having a target comprising a frame-shaped target mount, which is very well suited in a coating source for high power impulse magnetron sputtering of the target.

HIGH-SPEED CATHODIC SPUTTERING DEVICE.

HIGH-SPEED ATOMIZATION DEVICE.

Cathode assembly

Cathode sputterion device with permanent magnet structure

기판 프로세스 챔버를 위한 핀형 셔터 디스크

... 프로세스 챔버들에서 사용하기 위한 셔터 디스크들이 본원에서 제공된다. 몇몇 실시예들에서, 프로세스 챔버에서 사용하기 위한 셔터 디스크는, 외측 둘레를 갖는 본체, 본체의 정상부 표면 ― 정상부 표면은, 실질적으로 수평인 평면 표면을 갖는 중앙 부분, 및 중앙 부분의 방사상 외측으로 배치된 적어도 하나의 경사진 구조를 포함하고, 적어도 하나의 경사진 구조의 각각은 정상부 부분 및 정상부 부분으로부터 방사상 외측 방향으로 외측 둘레를 향하여 하방 각도로 배치된 경사진 표면을 가짐 ―, 및 본체의 바닥부 표면을 포함할 수 있다.

Tube target

The invention relates to a tube target (50) for sputtering, with a target (46) disposed on a cylindrical carrier tube. This target (46) is divided into several segments. The target (46) includes at least one groove (51-54) extending obliquely with respect to its rotational axis.

Sputter target design with improved sputtering plate material utilization

Sputtering device and method for manufacturing film

MULTITARGET SPUTTER SOURCE AND METHOD FOR THE DEPOSITION OF MULTI-LAYERS

Apparatus and methods for sputtering are provided, which are useful for sputtering high magnetization Saturation materials. In one embodiment, a plurality of sputtering target arrangements (1a, 1b, 2, 3a, 3b) are arranged concentrically, wherein independent magnetic fields can be generated at least partially above the respective target arrangements. One or several target arrangements can include respective upper (1a, 3a) and lower parts (1b, 3b) that are spaced from one another but arranged in essentially parallel planes. Methods include co-sputtering from multiple target arrangements to produce sputtered alloy layers on a Substrate, as well as alternately sputtering from different target arrangements to produce a plurality of sputtered layers on the substrate.

Centering of a plate in a holder both at room temperatures and at higher temperatures

A system that has a plate with a holder, in which the plate is centered in the holder both at room temperatures and at higher temperatures, independently of the thermal expansion of the plate and the holder, and in which the plate can freely expand in the holder at higher temperatures.

Controlled multi-step magnetron sputtering process

A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.

Method of pretexturing a cathode sputtering target and sputter coating an article therewith

A sputtering target is pretextured, prior to being subjected to the initial sputter precleaning and use in a sputter processing apparatus, by artificially roughening the sputtering surface of the target to produce a texture which functions, when used in the sputter coating of substrates, in a manner equivalent to the surface of a target roughened by an hour or more of a sputter burn-in process. The surface is textured by the machining of grooves or other irregular microstructure therein, by chemical etching, by mechanical abrading, or by another means other than sputter processing. A 0.05 to 3.0 millimeter texture size such as achieved with annular V-grooves 0.025 inches deep and spaced at 0.0625 inches is preferred.

Magnetron sputtering target for reduced contamination

A magnetron sputtering target is formed with a plurality of radially extending circumferential grooves to reduce particle contamination during sputtering. The grooves attract redeposited sputter material which is quickly resputtered during the early stages of fine particle nucleation.

Target sidewall design to reduce particle generation during magnetron sputtering

An apparatus for a physical vapor deposition system includes a target having a sidewall having an undercut thereon defining a net erosion area and a net redeposition area.

Diffusion-bonded sputter target assembly and method of manufacturing

A method of making a diffusion bonded sputter target assembly is provided. A target blank comprising a first metal or alloy has a first surface defining a sputtering surface and a second surface. A second metal or alloy is placed around the target blank. A backing plate is provided adjacent the second metal or alloy that is positioned alongside of the second target surface. This assembly is then diffusion bonded, and a portion of the second metal overlying the sputtering surface of the target is removed to expose the target sputtering surface. W target or W alloy target/Ti or Ti alloy backing plate assemblies are provided with an Al interlayer positioned intermediate the W or W alloy target and backing plate. The assembly has a bond strength exceeding 50 MPa.

Sputtering target with backside cooling grooves

Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.

Electrochromic devices

Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices. In various embodiments, a counter electrode is fabricated to include a base anodically coloring material and one or more additives.

METHOD OF SPUTTER-COATING SUBSTRATES OR OF MANUFACTURING SPUTTER COATED SUBSTRATES AND APPARATUS

Whenever substrates are rotationally and continuously conveyed in a vacuum recipient around a common axis and past a magnetron sputter source, sputtering of the target, rotating around a central target axis, by the stationary magnetron plasma is adapted to the azimuthal extents radially differently spaced areas of the substrates become exposed to the target thereby improving homogeneity of deposited layer thickness on the substrates and ensuring that the complete sputter surface of the target is net-sputtered.

Target arrangement for mounting/dismouting and method of manufacturing

So as to provide a target arrangement with improved mounting and dismounting ability, the target arrangement comprises a plate along a plane (E) which has a border (7) defined by a first wedge surface (5u) angled to the addressed general plane (E) and a second wedge surface (51) which is substantially planar as well and angled with respect to the generic plane (E). The two wedge surfaces mutually convert in a direction along the addressed plane (E) and from a more central area of the plate outwardly.

Coating device for coating a substrate and method for same

Die Erfindung betrifft eine Verdampfungsvorrichtung (1) zur Verdampfung eines Targetmaterials (200, 201, 202). Die Verdampfungsvorrichtung (1) umfasst eine Prozesskammer (3) zur Errichtung und Aufrechterhaltung einer Gasatmosphäre, die einen Einlass (4) und einen Auslass (5) für ein Prozessgas aufweist, sowie eine Anode (6, 61) und eine als Target (2, 21, 22) ausgestaltete zylinderförmige Verdampfungskathode (2, 21, 22), welche zylinderförmige Verdampfungskathode (2, 21, 22) das Targetmaterial (200, 201, 202) umfasst. Weiter ist eine elektrische Energiequelle (7, 71, 72) zur Erzeugung einer elektrischen Spannung zwischen der Anode (6, 61) und der Kathode (2, 21, 22) vorgesehen, so dass mittels der elektrischen Energiequelle (7, 71, 72) das Targetmaterial (200, 201, 202) der zylinderförmigen Kathode (2, 21, 22) in eine Dampfphase überführbar ist, wobei eine ein Magnetfeld erzeugende Magnetfeldquelle (8, 81, 82) vorgesehen ist. Erfindungsgemäss ist in der Prozesskammer (3) gleichzeitig eine ...

Magnetron sputter apparatus and method for forming films by using the same apparatus

A magnetron sputter apparatus according to the present invention is constructed so as to satisfy a predetermined optimum relationship between the size of the erosion area (14) on the surface of a target (4) and that of a film forming region (15). Further the distance (Ds) between the target (4) and substances has a value perdetermined for the relationship between the size of the erosion area on the surface of the target (4) and that of the film forming region (15). By using the magnetron sputter apparatus according to the present invention it is possible to form a homogeneous thin film excellent in the step coverage, having a film thickness distribution, in which variations are small over a large area.

УСТРОЙСТВО ДЛЯ УДЕРЖИВАНИЯ МИШЕНИ

... 1. Устройство для крепления мишени или сегмента (9) мишени в источнике покрытия, содержащем мишень или сегмент (9) мишени и устройство (1) удерживания мишени, которое снабжено теплоотводом (13) и соединительными средствами (6, 7, 8, 11) для крепления мишени или сегмента мишени на теплоотводе, отличающееся тем, что соединительные средства (3, 6, 7, 8, 10, 11) содержат электропроводные и/или теплопроводные средства, так что токоподвод осуществляется с равномерным распределением по мишени или сегменту мишени, а возникающее во время процесса нанесения покрытия в мишени или сегменте мишени тепло равномерно отводится в теплоотвод. 2. Устройство по п.1, отличающееся тем, что предусмотрена Т-образная гайка (8) для приема крепежного винта (7) для соединения сегмента мишени с теплоотводом (13). 3. Устройство по п.2, отличающееся тем, что Т-образная гайка и/или крепежный винт (7) снабжены контактной пластиной (3), при этом за счет контактной пластинки (3) обеспечивается возможность создания электропроводного ...

Target für Kathodenzerstäubungsanlagen

Zerstäubungsvorrichtung mit einer Kathode mit Permanentmagnetanordnung

Zerstäubungsvorrichtung mit einer Kathode mit Permanentmagnetanordnung

Zylinderförmiges Sputtertarget und Verfahren zu seiner Herstellung

Sputtertarget und Verfahren zur Verarbeitung elnes Sputtertarget

Aufgabe: Ein Sputtertarget zu schaffen, welches es ermöglicht, dass Metallbestandteil mittels eines einfaches Prozesses und eines Verfahrens zum Verarbeiten des Sputtertarget voneinander getrennt werden können. Lösung: Ein Verfahren zur Verarbeitung eines Sputtertarget gemäß der vorliegenden Erfindung führt einen Wasserstoffversprödungsprozess im Bezug auf ein Sputtertarget (1) durch, welches einen ersten Targetabschnitt (3), der aus einem ersten Material hergestellt ist, das ein mit Wasserstoff nicht versprödendes Material ist, und einen zweiten Targetabschnitt (4) aufweist, der aus einem zweiten Material hergestellt ist, das ein Wasserstoffversprödungsmaterial ist, welche miteinander verbunden sind, um auf diese Weise von dem Sputtertarget (1) den ersten Targetabschnitt (4) zu trennen, das zweite Material zu sammeln und das erste Material zu sammeln. Durch Verwenden des Unterschieds bezüglich der Wasserstoffversprödung zwischen dem ersten Material und dem zweiten Material werden das erste ...

Zylindrisches Sputter-Target-Material

Angegeben wird ein zylindrisches Sputter-Target-Material, gebildet aus Kupfer oder einer Kupferlegierung, worin ein Durchschnittswert der speziellen Korngrenzlängenverhältnisse LN/LN, die gemessen werden in Bezug auf die äußeren peripheren Oberflächen von beiden Endbereichen und die äußere periphere Oberfläche des Mittenbereiches in einer Achsen-O-Richtung auf gleich oder mehr als 0,5 eingestellt wird, und jeder Messwert in einem Bereich von ±20 % in Bezug auf den Durchschnittswert der speziellen Korngrenzlängenverhältnisse LN/LN liegt, und die Gesamtmenge an Si und C, die Verunreinigungselemente sind, gleich oder kleiner als 10 Masse-ppm und die Menge an O gleich oder kleiner als 50 Masse-ppm ist.

Cathode ARC source with target feeding apparatus

ATOMIZATION CATHODE AFTER THE MAGNETRONPRINZIP.

ATOMIZATION DEVICE WITH A TUBING CATHODE AND PROCEDURE FOR THE OPERATION OF THIS ATOMIZATION DEVICE

MAGNETRON SPUTTERQUELLE ONE, SPUTTERING COATING PLANT AND PROCEDURE FOR THE COATING OF A SUBSTRATE

Sputtering Target und Verfahren zur Herstellung

Die Erfindung betrifft ein Sputtering Target aus einer Mo-Legierung, die zumindest ein Metall der Gruppe 5 des Periodensystems enthält, wobei der mittlere Gehalt an Gruppe 5 Metall 5 bis 15 At% und der Mo-Gehalt 80 At% betragen. Das Sputtering Target weist ein mittleres C/O Verhältnis in (At% / At%) von 1 auf. Die erfindungsgemäßen Sputtering Targets lassen sich durch Umformung herstellen und weisen ein verbessertes Sputterverhalten auf.

ROHRTARGET

Die Erfindung beschreibt ein Rohrtarget aus Refraktärmetall oder einer Refraktärmetalllegierung, das zumindest einen Rohrabschnitt X mit einer relativen Dichte RDx und zumindest einen Rohrabschnitt Y mit einer relativen Dichte RDy umfasst, wobei zumindest ein Rohrabschnitt X zumindest bereichsweise einen größeren Außendurchmesser als zumindest bereichsweise ein Rohrabschnitt Y aufweist und das Dichteverhältnis die Beziehung (RDy-RDx)/RDy = 0,001 erfüllt. Weiters beschreibt die Erfindung ein Verfahren zur Herstellung eines Rohrtargets aus Refraktärmetall oder einer Refraktärmetall-Legierung durch Sintern und örtlich unterschiedlich hohes Verformen. Das Rohrtarget weist einen über die gesamte Oberfläche gleichmäßigeren Sputterabtrag auf im Vergleich zu Rohrtargets gemäß dem Stand der Technik. Die Rohrtargets neigen weder zum Arcen, noch zur Teilchengenerierung.

TARGET FOR CATHODE SPUTTERING

Cylindrical magnetron shield structure

MAGNETRON SPUTTERING TARGETS

A magnetron sputter coating device having a target of material to be sputtered and a magnetic means for producing a closed-loop magnetic tunnel capable of confining a glow discharge adjacent a surface of the target is disclosed. A groove is provided in the surface of the target along at least part of the erosion region. The groove affects the sputtering voltage and profile of the sputtering surface as it erodes. The dimensions and location of the groove can be selected to optimize the effects for particular magnetron sputtering devices.

METHOD AND APPARATUS FOR SPUTTER COATING STEPPED WAFERS

CYLINDRICAL MAGNETRON SHIELD STRUCTURE

An improved shield structure for use in a sputtering apparatus for depositing a film on a substrate is disclosed. The cylindrically shaped shield structure, which extends over the ends of a cylindrical sputtering target, has at least one annular structure extending around an outside surface of the shield. The annular structure is dimensioned to interrupt or suppress movement of any arc which might otherwise travel across its outside surface. In a preferred embodiment, the annular structure is a groove capable of trapping any such arc therein and preventing its escape therefrom. In another preferred embodiment, the improved shield structure is electrically isolated such that it is prevented from becoming an anode. In this manner, the electrically isolated shield structure inhibits the formation of severe arcs between it and the cathodic target. Further, with its arc-suppressing annular structure, the electrically isolated shield structure inhibits movement of any such severe arcs which might ...

TARGET FOR CATHODE SPUTTERING

... 2098725 9213115 PCTABS00014 A sputtering target and target assembly (12) includes a target member (10) having a substantially continuously concave top surface (17) and a bottom surface (18) with a central, downwardly directed hub (21) and at least three annular regions of differing radius of curvature (23, 27, 25). The shape of the target member (10) bottom surface (18) conforms to a backplate (11) to which it is mounted, thereby facilitating accurate mounting of the target member (10) during sputtering. The corresponding shapes of the target member (10) and backplate (11) promote maximum utilization of sputtering material.

Sputtering cathode, sputtering device and a method for producing the film

Finned shutter disk for a substrate process chamber

TARGET FOR DEPOSITING MAGNETIC MATERIAL BY SPUTTERING MAGNETRON

SPUTTERING APPARATUS, A DRIVING METHOD THEREOF AND A METHOD FOR MANUFACTURING A PANEL USING THE SAME, CAPABLE OF REDUCING ENTIRE SIZE

PURPOSE: A sputtering apparatus, a driving method thereof and a method for manufacturing a panel using the same are provided to reduce the entire size by making a target device to be rotatable for reducing relatively the width of the target device. CONSTITUTION: A sputtering apparatus includes a susceptor and a plurality of target devices located facing to the susceptor. A substrate is mounted on the susceptor and a positive power is applied to the substrate. Each target devices comprise a target, baking plate and a magnet. The target devices(20a,20c) are mounted to be rotatable by a predetermined axis(24a,24c) parallel to a substrate(22). The axises are formed respectively on each target devices. © KIPO 2008 ...

원통형 스퍼터링 타깃용 소재의 제조 방법

... 구리 또는 구리 합금으로 이루어지는 원통형 스퍼터링 타깃용 소재의 제조 방법으로서, 연속 주조기 또는 반연속 주조기를 사용하여, 평균 결정 입경이 20 ㎜ 이하인 원통상 주괴를 주조하는 연속 주조 공정과, 이 원통상 주괴에 대하여 냉간 가공과 열처리를 반복하여 실시함으로써, 외주면에 있어서의 평균 결정 입경이 10 ㎛ 이상 150 ㎛ 이하, 또한, 평균 결정 입경에 대하여 2 배 이상의 결정립이 차지하는 면적 비율이 전체 결정 면적의 25 ％ 미만으로 된 상기 원통형 스퍼터링 타깃용 소재를 성형하는 냉간 가공 공정 및 열처리 공정을 구비하고 있다.

TUBE TARGET

SPUTTERING TARGETS, SPUTTER REACTORS, METHODS OF FORMING CAST INGOTS, AND METHODS OF FORMING METALLIC ARTICLES

The invention encompasses a method of forming a metallic article. An ingot of metallic material is provided, and such ingot has an initial thickness. The ingot is subjected to hot forging. The product of the hot forging is quenched to fix an average grain size of less than 250 microns within the metallic material. The quenched material can be formed into a three dimensional physical vapor deposition target. The invention also includes a method of forming a cast ingot. In particular aspects, the cast ingot is a high-purity copper material. The invention also includes physical vapor deposition targets, and magnetron plasma sputter reactor assemblies. © KIPO & WIPO 2008 ...

ROTATABLE SPUTTER TARGET

원통형 스퍼터링 타깃용 소재

... 구리 또는 구리 합금으로 이루어지는 원통형 스퍼터링 타깃용 소재로서, 외주면의 결정 조직에 있어서, EBSD 법에 의해서 측정한 단위 면적 1 ㎟ 당의 단위 전체 입계 길이 (LN) 와 단위 면적 1 ㎟ 당의 단위 전체 특수 입계 길이 (LσN) 에 의해서 특수 입계 길이 비율 (LσN/LN) 을 정의한 경우에, 축선 (O) 방향의 양단부의 외주면과 중앙부의 외주면에서 측정된 상기 특수 입계 길이 비율 (LσN/LN) 의 평균값이 0.5 이상이 됨과 함께, 각각의 측정값이, 상기 특수 입계 길이 비율 (LσN/LN) 의 평균값에 대하여 ±20 ％ 의 범위 내로 되어 있고, 또한, 불순물 원소인 Si 와 C 의 함유량의 총계가 10 질량ppm 이하, O 함유량이 50 질량ppm 이하로 되어 있다.

Method of producing raw material for rotary sputtering target

A method of producing raw material for a rotary sputtering target consisted of copper or copper alloy is provided. The method includes the steps of: continuous-casting a tubular ingot with the average crystal grain size of 20 mm or less using a continuous casting machine or a semicontinuous casting machine; and cold-working and heat-treating in which the tubular ingot is subjected to cold-working and heating-treating repeatedly to form the raw material for the rotary sputtering target, in which an average crystal grain size on an outer periphery is 10 [mu]m or more and 150 [mu]m or less and an area ratio of crystal grains with a crystal grain size twice as much as the average crystal grains or more relative to an area of an entire crystal surface is less than 25 %.

ROTATABLE SPUTTER TARGET

A target arrangement for providing material to be deposited on a substrate is provided. The target arrangement includes a target part (210) made of the material to be deposited. The target part may substantially have the shape of a hollow cylinder having an inner (260) and an outer (250) diameter, wherein the hollow cylinder includes a cylindrical surface (211) and two face surfaces (212). The target arrangement may further include a connection arrangement comprising a recess (230) within at least one of the face surfaces of target part. Also, a deposition apparatus including the target arrangement and a method for mounting a target arrangement in a deposition chamber are described.

MULTIPLE GROOVED VACUUM COUPLING

The present invention relates to a coupling system (10) to releasably clamp a cylindrical target (12) to a spindle (14) by means of an interface ring (22) and a clamping ring (26), whereby the interface ring (22) and the cylindrical target (12) have engaging surfaces comprising two or more circular grooves (18). In another embodiment the clamping ring and the interface ring are the same piece. The advantage of the present coupling system is that it allows a square fitting and avoids high mechanical stresses.

Magnetic targets for use in sputter coating apparatus

Magnetron sputter coating sources are usually designed for vacuum deposition of nonmagnetic materials. Such sources employ nonmagnetic sputter targets. In some cases it is desired to use the same magnetron sources to dispense magnetic materials. It is therefore desired to use magnetic sputter targets interchangeably with nonmagnetic sputter targets. The novel design approach of the present invention employs a magnetic sputter target comprising first and second magnetic target portions separated by a gap. These magnetic target portions serve as virtual pole pieces. The fringing magnetic field adjacent the gap serves to position and enhance the glow discharge. By controlling the configurations of these virtual pole pieces and the gap between them, the glow discharge and the corresponding target erosion pattern may, within limits, be shaped as desired. The magnetic target portions need not be magnetically saturated. Hence they may be made relatively thick in cross-section, thereby providing ...

Silicon target assembly

A target-backing plate assembly for use in physical vapor deposition (PVD) processes. The lower curved surface of the target of the assembly is received in a conformingly-shaped backing plate, while a planar upper surface is presented for PVD. The shape of the target increases the amount of material dissipated and the quality of the film and reduces the amount of necessary machining in production.

APPARATUS AND METHOD FOR LOADING A SUBSTRATE INTO A VACUUM PROCESSING MODULE, APPARATUS AND METHOD FOR TREATMENT OF A SUBSTRATE FOR A VACUUM DEPOSITION PROCESS IN A VACUUM PROCESSING MODULE, AND SYSTEM FOR VACUUM PROCESSING OF A SUBSTRATE

The present disclosure provides an apparatus for loading a substrate into a vacuum processing module. The apparatus includes a Bernoulli-type holder having a surface configured to face the substrate, and a gas supply configured to direct a stream of gas between the surface and the substrate, wherein the Bernoulli-type holder is configured to provide a pressure between the substrate and the surface configured for levitation of the substrate. The substrate is a large area substrate.

Target for a sputtering source

A target for a sputtering source can be subdivided into a plurality of exchangeable target segments ( 9 ). Each target segment ( 9 ) contains coating material, wherein each target segment ( 9 ) borders on at least two adjacent target segments ( 9', 9 ''), wherein each target segment is connectable to a base body ( 2, 13, 15 ) by means of at most one securing means ( 7, 8, 10 ).

TUBULAR TARGET

Ionized PVD source to produce uniform low-particle deposition

The present invention generally provides a target structure that allows uniform erosion and efficient utilization of a sputterable material while reducing particle generation caused by backscatter deposition. The target (10) has an annular region (42) comprised of sputterable material and a central region (44) configured to receive direct deposition rather than backscatter deposition. The annular region (42) of the target (10) provides an exposed surface (12) that is generally concave, but is preferably substantially frustoconical. The central region (44) of the target (10) provides an exposed surface (46, 46a) having a configuration that is either substantially planar or convex1 but is preferably substantially convex frustoconical.

Process for producing optical recording medium, sputtering method and sputtering target

An optical recording medium having on a substrate an optical recording film and an inorganic dielectric film containing a target element of a metal or metalloid, such as Si or Ge, is produced by forming the inorganic dielectric film by subjecting a sputtering target comprising a crystal of the target element to DC sputtering in a reactive gas atmosphere. Abnormal discharge leading to inferior products and a lower productivity is suppressed by constituting the sputtering target to have a sputtering surface conforming to a lattice plane of the crystal free from a void allowing intrusion of an atom, ion or radical originating from the reactive gas into the unit lattice. In case of an Si single crystal having a diamond structure, the sputtering surface is preferably conformed to a lattice plane represented by Miller indices (1,0,0) or (1,1,1). The sputtering target is preferably provided with a chamfer adjacent to the sputtering surface. ...

Target cooling procedure and device for cooling targets

Vorrichtung zur Kathodenzerstäubung

Vorrichtung zur Beschichtung von Substraten für Kathodenzerstäubungsanlagen

ZERSTAEUBUNGSKATODE NACH DEM MAGNETRONPRINZIP

VORRICHTUNG ZUR FERROMAGNETISCHEN SCHNELLZERSTAEUBUNG

Magnetronzerstäubungsanlage

Hochvakuum-Sputter-Vorrichtung und zu behandelndes Substrat

Vorrichtung zur Beschichtung von Substraten für Kathodenzerstäubungsanlagen.

MAGNETRON-ZERSTAEUBUNGS-VORRICHTUNG MIT EBENEN UND KONKAVEN AUFTREFFPLATTEN.

RINGFÖRMIGES SPUTTERTARGET

COATING APPARATUS

SPUTTERING ELECTRODES

ATOMIZATION DEVICE WITH A CATHODE WITH PERMANENT MAGNET ARRANGEMENT

CYLINDRICAL PVD TARGET

TARGET ARRANGEMENT

Rohrförmiges Target

The invention relates to a target (2a) for a cathode sputtering apparatus, comprising a tubular target body (4a) from a sputtering material and two connecting pieces (10a) that can be fixed to the target body (4a) for connecting the target body (4a) to the cathode sputtering apparatus, wherein a first connecting piece is connectable to a first end of the target body (4a) and a second connecting piece to a second end of the target body (4a), and wherein at least one locking means (12a-d) is formed on each connecting piece (10a) in order to connect the respective connecting piece (10a) to the target body (4a) in a rotationally fixed manner.

VACUUM CLUTCH WITH SEVERAL GROOVES

CYLINDRIC SPUTTERING TARGET AND PROCEDURE FOR ITS PRODUCTION

CYLINDRICAL TARGET WITH OSCILLATING MAGNET FROM MAGNETRON SPUTTERING

TARGET FOR THE REACTIVE SPUTTER DEPOSITION OF ELECTRICALLY INSULATING LAYERS

A target has a target surface designed to prevent production of spark discharge to an anode in a coating chamber. A first region of the target surface is made of a first material (M1) which is composed of one or more elements that, in a reaction with a reactive gas, result in an M I -containing composite material corresponding to a composition of a desired layer material for coating substrates that are to be coated. A second region of the target surface is made of a second, different, material (M2), which is composed of one or more elements that are inert against the reactive gas or that, in a reaction with the reactive gas, result in an M2-containing composite material with a higher electrical conductivity than the M1 -containing composite material. In a mixing region of a beveled target surface region the first and second materials are situated next to each other.

Target and backing plate assembly

Integrated anode and activated reactive gas source for use in a magnetron sputtering device

The invention relates to an integrated anode and activated reactive gas source for use in a magnetron sputtering device and a magnetron sputtering device incorporating the same. The integrated anode and activated reactive gas source comprises a vessel having an interior conductive surface, comprising the anode, and an insulated outer body isolated from the chamber walls of the coating chamber. The vessel has a single opening with a circumference smaller that that of the vessel in communication with the coating chamber. Sputtering gas and reactive gas are coupled through an input into the vessel and through the single opening into the coating chamber. A plasma is ignited by the high density of electrons coming from the cathode and returning to the power supply through the anode. A relatively low anode voltage is sufficient to maintain a plasma of activated reactive gas to form stoichiometric dielectric coatings.

Sputter target

In one aspect of the invention, a sputter target is provided comprising a backing plate ( 40 ) comprising a front surface and a back surface; and a sputtering plate mounted on said backing plate, the sputtering plate comprising a sputtering surface and a back surface. At least one of the back surface of the sputtering plate, the front surface of the backing plate, or the back surface of the backing plate has at least one groove ( 30 ) that is shaped and sized to correspond to an observed region of higher sputtering of the sputtering plate relative to an adjacent area of the sputtering plate. An insert ( 50 ) is placed in the groove(s). The backing plate comprises a first material, the sputtering plate comprises a second material, and an insert comprises a third material. In yet another aspect of the sputter target, a method of controlling the electromagnetic properties of a sputter target is provided.

Sputtering Cathode, Sputtering Cathode Assembly, and Sputtering Apparatus

The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target. 1. A sputtering cathode assembly , comprising:a pair of long-side portions each comprising a hollow cylindrical sputtering target supported by a shaft for rotation about a longitudinal central axis thereof, with the long-side portions being arranged parallel to each other and opposing each other across an interior region of the sputtering cathode assembly;a pair of short-side portions, with each of the pair of short-side portions extending between the pair of long-side portions near respective ends thereof and being arranged perpendicularly to the long-side portions and opposing each other across the interior region of the sputtering cathode assembly, the short-side portions each having a rectangular cross-section taken at a lengthwise central portion thereof;a long-side permanent magnet disposed within the hollow cylindrical sputtering target comprising each of the long-side portions, with each of the long-side permanent magnets extending lengthwise within its associated hollow cylindrical sputtering target with a north pole disposed toward one side of the associated hollow cylindrical sputtering target and a south pole disposed toward an opposite side of the associated hollow cylindrical sputtering target;a set of short-side permanent magnets associated with each of the short-side portions on a side thereof that is distal ...

SHIELDED SPUTTER DEPOSITION APPARATUS AND METHOD

A sputter deposition system and method, the system including a process module containing a vacuum enclosure configured to receive a moving substrate, a first sputtering target disposed in the vacuum enclosure and including a target material, and a shield disposed between the first sputtering target and the substrate, the shield having upper and lower edges. At least a portion of each of the upper and lower edges is not parallel to a movement direction of the substrate past the first sputtering target. 1. A sputter deposition system comprising a process module comprising:a vacuum enclosure configured to receive a moving substrate;a first sputtering target disposed in the vacuum enclosure and comprising a target material; anda shield disposed between the first sputtering target and the substrate, the shield having upper and lower edges,wherein at least a portion of each of the upper and lower edges is not parallel to a movement direction of the substrate past the first sputtering target.2. The deposition system of claim 1 , wherein:the upper and lower edges are saw tooth-shaped, V-shaped, or sinusoidal; orthe upper and lower edges have one or more V-shaped or U-shaped notches.3. The deposition system of claim 1 , further comprising an unshielded second sputtering target disposed in the vacuum enclosure and comprising a target material.4. The deposition system of claim 3 , wherein the vacuum enclosure comprises:a first vacuum chamber housing the first target; anda second vacuum chamber housing the second target.5. The deposition system of claim 3 , wherein the first and second targets comprise the same type of target material.6. The deposition system of claim 5 , wherein the target material comprises a transparent conductive oxide.7. The deposition system of claim 6 , wherein the transparent conductive oxide comprises indium tin oxide claim 6 , zinc oxide claim 6 , or a doped zinc oxide.8. The deposition system of claim 1 , wherein the deposition system further ...

SHIELDED SPUTTER DEPOSITION APPARATUS AND METHOD

A shielded sputter deposition system and method, the system including a process module including: a vacuum enclosure configured to receive a moving substrate, sputtering targets disposed in the vacuum enclosure, each sputtering target including a target material, and a peripheral shield disposed between the and substrate and an interstitial space located between adjacent sputtering targets. The peripheral shield may be configured to at least partially block indirect deposition of sputtered target material onto the substrate and to permit direct deposition of the sputtered target material onto the substrate. 1. A sputter deposition system comprising a process module comprising:a vacuum enclosure configured to receive a moving substrate;sputtering targets disposed in the vacuum enclosure, each sputtering target comprising a target material; anda peripheral shield disposed between the substrate and an interstitial space located between adjacent sputtering targets, the peripheral shield configured to at least partially block indirect deposition of sputtered target material onto the substrate and to permit direct deposition of the sputtered target material onto the substrate.2. The deposition system of claim 1 , wherein the peripheral shield comprises apertures claim 1 , each aperture configured to directly expose a portion of the substrate to a corresponding sputtering target.3. The deposition system of claim 2 , wherein at least one of the apertures is configured so that opposing first and second edge regions of the substrate are exposed to a higher amount of indirect deposition than a central region of the substrate.4. The deposition system of claim 2 , wherein at least one of the apertures is configured such that the peripheral shield exposes opposing first and second edge regions of the substrate to indirect deposition of sputtered target material from at least one of the sputtering targets claim 2 , and blocks substantially all indirect deposition of the sputtered ...

MAGNETRON PLASMA APPARATUS

A magnetron plasma apparatus boosted by hollow cathode plasma includes at least one electrically connected pair of a first hollow cathode plate and a second hollow cathode plate placed opposite to each other at a separation distance of at least 0.1 mm and having an opening following an outer edge of a sputter erosion zone on a magnetron target so that a magnetron magnetic field forms a perpendicular magnetic component inside a hollow cathode slit between plates and, wherein the plates and are connected to a first electric power generator together with the magnetron target to generate a magnetically enhanced hollow cathode plasma in at least one of a first working gas distributed in the hollow cathode slit and a second working gas admitted outside the slit in contact with a magnetron plasma generated in at least one of the first working gas and the second working gas. 1. A magnetron plasma apparatus boosted by hollow cathode plasma for plasma processing on a substrate in a reactor , comprising a parallel plate hollow cathode with a slit wherein a hollow cathode effect can be excited , magnetron sputtering apparatus with a magnetron target , an electric power generator for generation of plasma and a magnetic system generating a magnetron magnetic field giving form to an erosion zone on the magnetron target surface and spatial shape of the magnetron plasma , whereinat least one electrically connected pair of a first hollow cathode plate and a second hollow cathode plate placed opposite to each other at a separation distance of at least 0.1 mm has an opening following an outer edge of a sputter erosion zone on magnetron target so that a magnetron magnetic field forms a perpendicular magnetic induction component inside a hollow cathode slit between said plates and;said pair of plates and is connected to a first electric power generator together with said target to generate a magnetically enhanced hollow cathode plasma in at least one of a first working gas distributed in ...

Sputtering target with backside cooling grooves

Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.

Plasma Process and Reactor for the Thermochemical Treatment of the Surface of Metallic Pieces

The reactor (R) has a reaction chamber (RC) provided with a support (S) for metallic pieces and with a system of an anode, connected to a ground, and of a cathode system connected to the support (S) and to a pulsating DC power supply. In the reaction chamber (RC), heated and supplied with a gas load, is formed, by means of an electric discharge in the cathode, a gas plasma. A liquid or gas precursor is admitted in at least one tubular cracking chamber associated with a high voltage energy source. It may be provided at least one tubular sputtering chamber associated with an electric power supply receiving a solid precursor. A potential difference is applied between the anode and one and/or other of said tubular chambers, to release the alloy elements to be ionically bombarded against the metallic pieces, either simultaneously or individually and in any order. 1. A process for the thermochemical treatment of the surface of metallic pieces , in a plasma reactor (R) having a reaction chamber (RC) provided with:a support (S) carrying the metallic pieces; a system of anode and cathode having one of its electrodes associated with a pulsating DC power supply;an inlet of ionizable gas load; an inlet of liquid or gas precursor; and an outlet for exhaustion of gas load, characterized in that it comprises the steps of:a) connecting the anode to a first electrode and to a ground and connecting the cathode to the support (S), operating as the other electrode of the system of anode and cathode, and to a negative potential of the pulsating DC power supply;b) statically positioning the metallic pieces on the support (S) associated with the cathode in the interior of the reaction chamber (RC);c) surrounding the support (S) and the metallic pieces with an ionizable gas load supplied to the reaction chamber (RC) through the inlet;d) heating the interior of the reaction chamber (RC) to a working temperature;e) applying to the cathode, associated with the support (S) and with the ...

TABLET FOR PLASMA COATING SYSTEM, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING A THIN FILM USING THE METHOD OF MANUFACTURING THE TABLET

A tablet for a plasma coating system having a first part that includes a first material having a first sublimation point at a first pressure and a second part that is disposed on the first part and comprises a second material having a second melting point at the first pressure, wherein the second melting point is lower than the first sublimation point. 1. A tablet for a plasma coating system , the tablet comprising:a first part that comprises a first material having a first sublimation point at a first pressure; anda second part that is disposed on the first part and comprises a second material having a second melting point at the first pressure,wherein the second melting point is lower than the first sublimation point.2. The tablet of claim 1 , wherein the first material is a tin oxide.3. The tablet of claim 1 , wherein the second material is tin.4. The tablet of claim 1 , wherein the second material is a mixture that comprises at least one of a tin oxide claim 1 , a phosphorus oxide claim 1 , a boron phosphate claim 1 , a tin fluoride claim 1 , a niob oxide claim 1 , a zinc oxide claim 1 , or a boron oxide claim 1 , and a tungsten oxide.5. The tablet of claim 1 , wherein the second part occupies a volume in a range from about 10% to about 50% of the whole tablet and the first part occupies a volume in a range from about 50% to about 90% of the whole tablet.6. The tablet of claim 1 , wherein a central portion of an upper surface of the first part is concaved towards a lower surface of the first part.7. The tablet of claim 1 , wherein the second part is formed in a single piece or a plurality of pieces.8. A method of forming a tablet that comprises a first part and a second part for a plasma coating system claim 1 , the method comprising:forming the first part by grinding, compressing, and sintering a first material having a first sublimation point at a first pressure; andforming a second part by locating a second material having a second melting point at the first ...

Method of coating high aspect ratio features

A sputtering apparatus includes a chamber for containing a feed gas. An anode is positioned inside the chamber. A cathode assembly comprising target material is positioned adjacent to an anode inside the chamber. A magnet is positioned adjacent to cathode assembly. A platen that supports a substrate is positioned adjacent to the cathode assembly. An output of the power supply is electrically connected to the cathode assembly. The power supply generates a plurality of voltage pulse trains comprising at least a first and a second voltage pulse train. The first voltage pulse train generates a first discharge from the feed gas that causes sputtering of a first layer of target material having properties that are determined by at least one of a peak amplitude, a rise time, and a duration of pulses in the first voltage pulse train. The second voltage pulse train generates a second discharge from the feed gas that causes sputtering of a second layer of target material having properties that are determined by at least one of a peak amplitude, a rise time, and a duration of pulses in the second voltage pulse train.

Sputter System for Uniform Sputtering

A sputter system for applying a coating on a substrate is described. The sputter system comprises at least two cylindrical sputter units for the joint sputtering of a single coating. Each sputter unit comprising an elongated magnet configuration and at least one elongated magnet configuration comprising a plurality of magnet structures and magnet structure control systems along the length direction of the elongated magnet configuration. At least one magnet structure is adjustable in position and/or shape by a magnet structure control system, while a sputter target is mounted on the sputter unit. 122-. (canceled)23. A sputter system for applying a coating on a substrate , the sputter system comprising:a substrate holder, upon which a substrate can be positioned, in such a way that the substrate is substantially stationary during the application of the coating;at least two cylindrical sputter units for the joint sputtering of a coating, each sputter unit comprising an elongated sputter magnet configuration;wherein at least one elongated magnet configuration comprises a plurality of magnet structures and magnet structure control systems along the length direction of the elongated magnet configuration, wherein at least one magnet structure is adjustable in position and/or shape by a magnet structure control system, while a sputter target is mounted on the sputter unit, in order to influence the homogeneity of the sputtered coating on the substrate.24. A sputter system according to claim 23 , wherein at least part of the elongated magnet configurations comprises a plurality of magnet structures and magnet structure control systems along the length direction of the elongated magnet configurations claim 23 , whereby a part of the magnet structure is remotely adjustable in position and/or shape by a magnet structure control system.25. A sputter system according to claim 23 , wherein the cylindrical sputter units are oriented substantially parallel with respect to each other ...

SILVER-BASED CYLINDRICAL TARGET AND PROCESS FOR MANUFACTURING SAME

A silver-based cylindrical target is provided. The target consists of silver or a single-phase silver alloy in which an additive component is solid-soluted, wherein a ratio A/B is 0.8-1.2, A being a diameter of crystal grains in a direction along a central axis of a cylinder in a cross section including the central axis of the cylinder; and B being a diameter of crystal grains in a direction perpendicular to the central axis, an oxygen content is 100 ppm or less, and a content of non-metallic inclusions is 20 ppm or less. 1. A silver-based cylindrical target consisting of silver or a single-phase silver alloy in which an additive component is solid-soluted , whereina ratio A/B is 0.8-1.2, A being a diameter of crystal grains in a direction along a central axis of a cylinder in a cross section including the central axis of the cylinder; and B being a diameter of crystal grains in a direction perpendicular to the central axis,an oxygen content is 100 ppm or less, anda content of non-metallic inclusions is 20 ppm or less.2. The silver-based cylindrical target according to claim 1 , wherein an average grain size of the crystal grains is 30 μm or more and 400 μM or less claim 1 , and a dispersion of the grain size of the crystal grains is 20% or less of the average grain size.3. The silver-based cylindrical target according to claim 1 , wherein the silver-based cylindrical target consists of the silver alloy claim 1 , and the additive component is at least one selected from a group consisting of Mg claim 1 , Al claim 1 , Zn claim 1 , Ga claim 1 , Pd claim 1 , In claim 1 , Sn claim 1 , Sb claim 1 , and Au.4. A method of producing a silver-based cylindrical target comprising the steps of:performing a hot extrusion process in which a silver ingot or an ingot solid-soluting an additive component is subjected to extrusion work into a cylindrical shape in a condition where an extrusion ratio is 4 or more and 15 or less and a material temperature immediately after extrusion is ...

SPUTTERING TARGET WITH BACKSIDE COOLING GROOVES

Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate. 1. A sputtering target for a sputtering chamber , the sputtering target comprising: a plurality of circular grooves which are spaced apart from one another; and', 'at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of the sputtering plate; and, 'a sputtering plate with a backside surface having radially inner, middle and outer regions, the backside surface havingan annular-shaped backing plate mounted to the sputtering plate, wherein the annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.2. The sputtering target of claim 1 , wherein the circular grooves are concentric grooves.3. The sputtering target of claim 2 , wherein the circular grooves comprises from about 20 to about 30 grooves.4. The sputtering target of claim 1 , wherein all of the circular grooves are located at the radially middle region of the backside surface.5. The sputtering target of claim 1 , wherein the backside surface has at least 8 arcuate channels.6. The sputtering target of claim 5 , wherein the arcuate channels are spaced apart from one another by an angle of from about 30 to about 90 degrees ...

SPUTTERING TARGET HAVING REVERSE BOWNG TARGET GEOMETRY

Generally planar sputter targets having a reverse bow surface (i.e., convexity) facing the magnets in a magnetron assembly is provided. Methods of making Cu and Cu alloy targets are provided including an annealing step performed at temperatures of from 1100-1300 F for a period of about 1-2 hours. Targets made by the methods have increased grain sizes on the order of 30-90 microns. 1. A generally planar sputter target that has an initial reverse bow in the form of a convex surface exhibiting a percent bowing of greater than 0.04% , said reverse bow adapted for continued bowing during sputtering.2. A sputter target as recited in wherein said percent bowing is between about 0.04%-0.25%.3. A sputter target as recited in composed of Cu claim 1 , Al claim 1 , Ti claim 1 , or Ta claim 1 , or alloys of these elements.4. A sputter target as recited in wherein said sputter target comprises Cu or Cu alloy claim 3 , and wherein said sputter target is a monolithic sputter target.5. A sputter target as recited in in combination with a backing plate claim 3 , said sputter target and said backing plate bonded together via a mechanical interlocking bond.6. A sputter target adapted for reception in a sputtering chamber of the type having a substrate that is to be coated with material sputtered from said target claim 3 , and a magnet source proximate said target for producing a magnetic field within said chamber claim 3 , said sputter target having a sputter surface from which said material is sputtered onto said substrate and an opposing surface proximate said magnet source claim 3 , said opposing surface comprising a convex surface facing said magnet source.7. A sputter target as recited in wherein said target is a generally planar monolithic target.8. A sputter target as recited in wherein said sputter surface of said target comprises a generally concave shape.9. A sputter target as recited in wherein said convex surface has a percent bowing of greater than 0.04%.10. A sputter ...

LARGE-GRAIN TIN SPUTTERING TARGET

The present disclosure relates generally to a planar sputtering target. In particular, the present disclosure provides a planar sputtering target comprising a planar sputtering surface and a back surface opposite the planar sputtering surface. The planar sputtering target is formed from a 2N purity tin having an average grain size from at least 10 mm to at most 100 mm. The present disclosure provides a method of manufacturing the tin planar sputtering target having an average grain size from at least 10 mm to at most 100 mm. 1. A planar sputtering target comprising:a planar sputtering surface; and,a back surface opposite the planar sputtering surface;wherein the planar sputtering target is formed from a 2N purity tin having an average grain size from at least 10 mm to at most 100 mm.2. The planar sputtering target of claim 1 , wherein the average grain size is from at least 20 mm to at most 50 mm.3. The planar sputtering target of claim 1 , wherein the average grain size is uniformly distributed.4. The planar sputtering target of claim 1 , wherein the tin is a high purity tin having an impurity content of at most 15 ppm.5. The planar sputtering target of having an impurity content of at most 10 ppm.6. The planar sputtering target of claim 1 , wherein the tin is a high purity tin having an alpha count of less than 0.01 cph/cm.7. A method of manufacturing the planar sputtering target of claim 1 , the method consisting of the steps:casting molten tin of at least 2N purity;thermomechanical processing the cast tin to form a thermomechanically processed tin; andheat treating the thermomechanically processed tin at a temperature of from at least 175° C. to at most 225° C. for a time of from at least 2 hours to at most 48 hours to form a planar sputtering target having an average grain size from at least 10 mm to at most 100 mm.8. The method of claim 7 , wherein the step of casting molten tin includes having a crucible temperature of from about 235° C. to about 350° C. for ...

Heat-Transfer Roller for Sputtering and Method of Making the Same

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

MAGNETRON PLASMA APPARATUS

A magnetron plasma apparatus boosted by hollow cathode plasma includes at least one electrically connected pair of a first hollow cathode plate and a second hollow cathode plate placed opposite to each other at a separation distance of at least 0.1 mm and having an opening following an outer edge of a sputter erosion zone on a magnetron target so that a magnetron magnetic field forms a perpendicular magnetic component inside a hollow cathode slit between plates and, wherein the plates and are connected to a first electric power generator together with the magnetron target to generate a magnetically enhanced hollow cathode plasma in at least one of a first working gas distributed in the hollow cathode slit and a second working gas admitted outside the slit in contact with a magnetron plasma generated in at least one of the first working gas and the second working gas. 1. A magnetron plasma apparatus boosted by hollow cathode plasma for plasma processing on a substrate in a reactor , comprising a parallel plate hollow cathode with a slit wherein a hollow cathode effect can be excited , magnetron sputtering apparatus with a magnetron target , an electric power generator for generation of plasma and a magnetic system generating a magnetron magnetic field giving form to an erosion zone on the magnetron target surface and spatial shape of the magnetron plasma , whereinat least one electrically connected pair of a first hollow cathode plate and a second hollow cathode plate placed opposite to each other at a separation distance of at least 0.1 mm has an opening following an outer edge of a sputter erosion zone on magnetron target so that a magnetron magnetic field forms a perpendicular magnetic induction component inside a hollow cathode slit between said plates and;said pair of plates and is connected to a first electric power generator together with said target to generate a magnetically enhanced hollow cathode plasma in at least one of a first working gas distributed in ...

Apparatus and method for coating inner wall of metal tube

An apparatus and a method for coating an inner wall of a metal tube are provided. The apparatus for coating an inner wall of a metal tube includes mounting posts on which both end openings of a metal tube are mounted and configured to block the inside of the metal tube from the ambient air so that a pressure in the metal tube is adjustable by the vacuum exhaust and inflow of process gases, a sputtering target metal tube installed inside the metal tube coaxially with the metal tube, a pulse electromagnet installed around an outside perimeter of the metal tube coaxially with the metal tube to apply a pulse magnetic field in an axial direction of the metal tube, an electromagnetic pulse power supply unit configured to apply pulse power to the pulse electromagnet, and a sputtering pulse power supply unit configured to synchronize a negative high-voltage pulse with the pulse power applied to the pulse electromagnet and apply to the sputtering target metal tube.

CYLINDRICAL SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME

The cylindrical sputtering target is a Cu—Ga alloy cylindrical sputtering target made of a Cu alloy containing 15 atom % to 35 atom % of Ga, in which the Cu alloy has a granular crystal structure. 1. A cylindrical sputtering target formed through casting , wherein ,the cylindrical sputtering target is a Cu alloy containing 15 atom % to 35 atom % of Ga, andan average value of ratios of a long axis to a short axis of crystal grains in the Cu alloy is 2.0 or lower.2. The cylindrical sputtering target according to claim 1 ,wherein a thickness of the target is 3 mm or greater.3. The cylindrical sputtering target according to claim 1 ,wherein an average equivalent circle diameter of the crystal grains projected from a sputtering surface is 5 mm or lower.4. The cylindrical sputtering target according to claim 1 ,wherein a concentration of oxygen in the Cu alloy is 50 ppm by mass or lower.5. The cylindrical sputtering target according to claim 1 ,wherein a difference between a maximum value and a minimum value of a concentration of Ga in a sputtering portion is 2.0 atom % or lower.6. The cylindrical sputtering target according to claim 1 ,wherein the casting is a centrifugal casting method.7. The cylindrical sputtering target according to claim 1 ,wherein the casting is a continuous casting method.8. A method for manufacturing the cylindrical sputtering target according to claim 1 ,wherein a centrifugal force applied to a molten metal of a Cu alloy containing 15 atom % to 35 atom % of Ga is 50 times to 150 times the force of gravity in a centrifugal casting method.9. A method for manufacturing the cylindrical sputtering target according to claim 1 ,wherein the molten metal of the Cu alloy containing 15 atom % to 35 atom % of Ga is poured into a cooled cylindrical casting mold and is continuously cast at a drawing rate of 10 mm/min or greater. The present invention relates to a Cu—Ga alloy sputtering target used for the formation of a light-absorbing layer in a compound ...

SPUTTERING TARGET

A sputtering target comprising a target material, wherein a sputtering face of the target material has a ramp provided to reduce a thickness of the target material at a position where erosion concentrates most intensively during sputtering. 1a thickness of the ramp is 0.5 mm to 5 mm.. A sputtering target comprising a target material, wherein a sputtering face of the target material has a circular shape and a ramp, wherein the ramp has been provided so as to reduce a thickness of the target material, toward inner part of the sputtering face in the radial direction of the sputtering face, at a position in a range of 14% or more and less than 60% of a diameter of the sputtering face, and This application is a Divisional application of co-pending application Ser. No. 15/935,605, filed on Mar. 26, 2018, which claims the benefit under 35 U.S.C. § 119(a) to Patent Application No. 2017-064985, filed in Japan on Mar. 29, 2017 and Patent Application No. 2017-183878, filed in Japan on Sep. 25, 2017, all of which are hereby expressly incorporated by reference into the present application.The present invention relates to a sputtering target.Sputtering is a process in which an inert gas such as argon is introduced under vacuum and a high voltage is applied between a substrate and a target material to thereby collide the inert gas being plasmatized (or being ionized) with the target material and to sputter target atoms included in the target material, leading to deposition of the sputtered atoms on the substrate to form a thin film on the substrate.For example, there has generally been known magnetron sputtering in which a magnet is arranged on the back side of a sputtering face of the target material (i.e., face of a side where the inert gas made into plasma (or being ionized) is brought into collision in the target material), thereby enhancing a deposition rate.A sputtering target used in such sputtering typically has a plate shape, a cylindrical shape, or a disc shape. ...

BACKING PLATE-INTEGRATED METAL SPUTTERING TARGET AND METHOD OF PRODUCING SAME

Provided is a backing plate-integrated metal sputtering target comprising a flange part that is formed integrally with a target of which periphery becomes a backing plate, wherein the flange part comprises a structure obtained by repeating partial forging. By increasing the mechanical strength of only the flange part of the target in a backing plate-integrated sputtering target as described above, it is possible to inhibit the deformation of the target during sputtering and a change in the conventional sputtering properties; thereby the formation of thin films having superior uniformity can be realized, and the yield and reliability of semiconductor products, which are being subject to further miniaturization and higher integration, can be improved. 1. A backing plate-integrated metal sputtering target comprising a flange part that is formed integrally with a target of which periphery becomes a backing plate , wherein the flange part comprises a structure obtained by repeating partial forging , and an outer periphery of the target after forging is machined to eliminate portions containing strain resulting from forging.2. (canceled)3. The backing plate-integrated metal sputtering target according to claim 1 , wherein the backing plate-integrated metal sputtering target is of a disk shape claim 1 , an oval shape or a rectangular shape.4. The backing plate-integrated metal sputtering target according to claim 3 , wherein the backing plate-integrated metal sputtering target is made from titanium or titanium alloy claim 3 , and Vickers hardness Hv of the flange part that acts as a backing plate is 110 or more.5. A method of producing a backing plate-integrated metal sputtering target claim 3 , wherein claim 3 , upon forging a flange part that acts as a backing plate claim 3 , partial forging is performed claim 3 , and the flange part is obtained by ultimately forging an entire outer periphery of a material claim 3 , and an outer periphery of the target is machined after ...

Rotating magnetron sputtering target and corresponding magnetron sputtering device

The present invention relates to a rotating magnetron sputtering target and a corresponding magnetron sputtering device. The rotating magnetron sputtering target comprises a cylindrical target, a pole shoe and a plurality of magnetrons. The magnetron comprises a first magnetic pole arranged on a central portion thereof and two second magnetic poles arranged on both sides thereof, and the first and the second magnetic poles have opposite polarities. The rotating magnetron sputtering target and the corresponding magnetron sputtering device of the present invention improve the plasma density within a coating region, so that it forms a film with better quality and better uniformity.

Cylindrical compact, manufacturing method of cylindrical sputtering target, and manufacturing method of cylindrical sintered compact

A cylindrical sputtering target includes a plurality of cylindrical sintered compacts adjacent to each other while having a space therebetween. The plurality of cylindrical sintered compacts have a relative density of 99.7% or higher and 99.9% or lower. The plurality of cylindrical sintered compacts adjacent to each other have a difference therebetween in the relative density of 0.1% or smaller.

SPUTTERING TARGET CAPABLE OF STABILIZING IGNITION

A sputtering target comprising a flat part and a tapered part on a sputter surface, wherein of the tapered part includes a crystal distortion having an average KAM value of 0.5° or more. It is possible to lower the ignition failure rate of ignition (plasma ignition), and start the sputter process stably. Because the downtime of the device can thereby be shortened, it is possible to contribute to the improvement in throughput and cost performance. 1. A sputtering target comprising a flat part and a tapered part on a sputter surface exposed to plasma , wherein at least a surface portion of the tapered part includes a crystal distortion having an average KAM value of 0.5° or more.2. The sputtering target according to claim 1 , wherein a region of the tapered part including a crystal distortion having an average KAM value of 0.5° or more reaches a region which is 0.4 mm or more in depth from the surface.3. The sputtering target according to claim 2 , wherein a portion including a crystal distortion having an average KAM value of 0.5° or more is only the tapered part.4. The sputtering target according to claim 3 , wherein a shape of a portion of the tapered part including a crystal distortion is a knurled shape having a maximum depth of 500 μm claim 3 , a width of 1 mm or less claim 3 , and a pitch of 2 mm or less.5. The sputtering target according to claim 4 , wherein the sputtering target is formed from tantalum having a purity of 4N5 or higher.6. The sputtering target according to claim 1 , wherein a portion including a crystal distortion having an average KAM value of 0.5° or more is only the tapered part.7. The sputtering target according to claim 1 , wherein a shape of a portion of the tapered part including a crystal distortion is a knurled shape having a maximum depth of 500 μm claim 1 , a width of 1 mm or less claim 1 , and a pitch of 2 mm or less.8. The sputtering target according to claim 1 , wherein the sputtering target is formed from tantalum having a ...

Sputtering Cathode, Sputtering Cathode Assembly, and Sputtering Apparatus

The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target. 1. A shared-target sputtering cathode assembly , comprising:a left long-side portion, a right long-side portion, and a central long-side portion, with each long-side portion comprising a hollow cylindrical sputtering target supported by a shaft for rotation about a longitudinal central axis thereof, with the long-side portions being arranged parallel to each other and with the left long-side portion opposing the central long-side portion across a left interior region of the sputtering cathode assembly and the right long-side portion opposing the central long-side portion across a right interior region of the sputtering cathode assembly;a first pair of short-side portions, with each of the first pair of short-side portions extending between the left long-side portion and the central long-side portion near respective ends thereof and being arranged perpendicularly to the left and central long-side portions and opposing each other across the left interior region of the sputtering cathode assembly, the first pair of short-side portions each having a rectangular cross-section taken at a lengthwise central portion thereof;a second pair of short-side portions, with each of the second pair of short-side portions extending between the right long-side portion and the central long-side portion near respective ends thereof and being ...

Sputtering Target Product And Method For Producing Recycled Sputtering Target Product

The disclosure is related to reducing the cost of sputtering target products. Provided is a sputtering target product wherein: the sputtering target product includes a target, a backing plate or backing tube, and insert material layer; at least a part of the non-sputtering side of the target is profiled so as to have protrusions and recesses that have plane symmetry; the insert material layer is formed so as to adhere closely to the profiled side, and the insert material is made of metal with specific gravity that is at least less than those of the metal constituting the target.

Diffusion-bonded sputter target assembly and method of manufacturing

A method of making a diffusion bonded sputter target assembly is provided. A target blank comprising a first metal or alloy has a first surface defining a sputtering surface and a second surface. A second metal or alloy is placed around the target blank. A backing plate is provided adjacent the second metal or alloy that is positioned alongside of the second target surface. This assembly is then diffusion bonded, and a portion of the second metal overlying the sputtering surface of the target is removed to expose the target sputtering surface. W target or W alloy target/Ti or Ti alloy backing plate assemblies are provided with an Al interlayer positioned intermediate the W or W alloy target and backing plate. The assembly has a bond strength exceeding 50 MPa.

SPUTTERING TARGET AND METHOD OF PRODUCING THE SAME

A sputtering target according to an embodiment of the present invention includes: a plate-shaped target body formed of a metal material. The target body includes a target portion and a base portion. The target portion has a sputtering surface. The base portion has a cooling surface and includes a gradient strength layer, the cooling surface being positioned on a side opposite to the sputtering surface and having hardness higher than that of the sputtering surface, the gradient strength layer having tensile strength that gradually decreases from the cooling surface toward the target portion. 1. A sputtering target , comprising: a target portion having a sputtering surface, and', 'a base portion that has a cooling surface and includes a gradient strength layer, the cooling surface being positioned on a side opposite to the sputtering surface and having hardness higher than that of the sputtering surface, the gradient strength layer having tensile strength that gradually decreases from the cooling surface toward the target portion., 'a plate-shaped target body formed of a metal material, the target body including'}2. The sputtering target according to claim 1 , whereinthe gradient strength layer is a work hardened layer.3. The sputtering target according to claim 1 , whereinthe metal material is a metal material that mainly contains aluminum,{'sup': '2', 'the target portion has tensile strength of 35 N/mmor less, and'}{'sup': 2', '2, 'the gradient strength layer has tensile strength of 30 N/mmor more and 55 N/mmor less.'}4. The sputtering target according to claim 3 , whereinan average value of crystal orientation ratios (200/111) of the sputtering surface is 1.3 or more and 7.0 or less, andan average value of crystal orientation ratios (200/111) of the cooling surface is 0.8 or more and 1.2 or less.5. The sputtering target according to claim 3 , further comprisinga cylindrical flange portion that is bonded to a periphery of the cooling surface and formed of a metal ...

TARGET, FILM FORMING APPARATUS, AND METHOD OF MANUFACTURING FILM FORMATION OBJECT

An object is to extend the life of the target member. The target (TA) is designed to have a symmetrical structure so as to realize an invertible configuration. According to this, even if the consumption of the target member () is large on the side closer to the plasma generation unit where the plasma density is high, the portion of the target member () which has been located on the side closer to the film formation object where the plasma density is low and is thus consumed less can be rearranged on the side closer to the plasma generation unit where the plasma density is high, by inverting the target (TA). 1. A target comprising:a target member having a cylindrical shape; anda support member configured to support the target member,wherein the support member has a wall portion in contact with the target member via an adhesive member, a first portion formed to have a first thickness;', 'a second portion formed to have a second thickness thicker than the first thickness; and', 'a third portion formed to have the first thickness,, 'wherein the wall portion includeswherein the second portion is sandwiched between the first portion and the third portion, andwherein the first portion and the third portion are symmetrically arranged with respect to a virtual plane which is orthogonal to a center line of the cylindrical shape and divides the target member into equal halves.2. The target according to claim 1 ,wherein the second portion includes a concave portion which is thicker than the first portion and is thinner than the second thickness.3. The target according to claim 1 ,wherein the target member is formed to have a cylindrical shape.4. A film forming apparatus comprising:a holding unit configured to hold a film formation object;a plasma generation unit configured to generate plasma;a target provided between the holding unit and the plasma generation unit; anda fixing unit configured to fix the target, a target member having a cylindrical shape; and', 'a support member ...

Profiled sputtering target and method of making the same

A sputtering target comprising a sputtering material and having a non-planar sputtering surface prior to erosion by use in a sputtering system, the non-planar sputtering surface having a circular shape and comprising a central axis region including a concave curvature feature at the central axis region. The central axis region having a wear profile after erosion by use in a sputtering system for at least 1000 kWhrs including a protuberance including a first outer circumferential wear surface having a first slope. A reference, protruding convex curvature feature for a reference target after sputtering use for the same time includes a second outer circumferential wear surface having a second slope. The protuberance provides a sputtered target having reduced shadowing relative to the reference, protruding convex curvature feature, wherein the first slope is less steep than a second slope.

Rectangular Hollow Sputter Source and Method of use Thereof

A rectangular hollow sputtering source includes a box-shaped cathode including therethrough an aperture that is open at a first side and a second side of the box-shaped cathode. A cooling block surrounds the box-shaped cathode and a number of magnets are disposed in the cooling block around the aperture. An electrical insulating part surrounds and electrically isolates the cooling block, the bar magnets, and the cathode from an anode which surrounds the exterior of the electrical insulating part. 1. A rectangular hollow sputtering source comprising:a box-shaped cathode including therethrough an aperture that is open at a first side and a second side of the box-shaped cathode;a cooling block surrounding the box-shaped cathode;a plurality of magnets in the cooling block around the aperture;an anode; andan electrical insulating part surrounding and electrically isolating the cooling block, the bar magnets, and the cathode from the anode which surrounds the exterior of the electrical insulating part.2. The rectangular hollow sputtering source of claim 1 , wherein the cathode is comprised of a plurality of target segments coupled to the cooling block.3. The rectangular hollow sputtering source of claim 1 , further including a flange configured for positioning the rectangular hollow sputter source inside of an enclosure claim 1 , in spaced relation to the enclosure.4. The rectangular hollow sputtering source of claim 1 , wherein the cooling block includes a cooling line configured to receive a cooling fluid.5. A sputtering method comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, '(a) providing the rectangular hollow sputtering source of inside of a vacuum enclosure;'}(b) positioning a first substrate on the first side of the aperture; and(c) generating a plasma that causes atoms to be sputtered from the cathode onto a side of the first substrate that faces the aperture.6. The sputtering method of claim 5 , further including claim 5 , prior to step (c) claim 5 , ...

METHODS AND APPARATUS FOR UNIFORMITY CONTROL IN SELECTIVE PLASMA VAPOR DEPOSITION

Methods and apparatus for producing a uniform deposition layer for a selective plasma vapor deposition (PVD) chamber. Flux generated by a cylindrical target is adjusted using a magnetron assembly that controls the amount of flux that passes through a slit in the selective PVD chamber. In some embodiments, a magnetron assembly disposed within the cylindrical has a magnetic field strength that varies along a length of the magnetron assembly. The magnetron assembly disposed within the cylindrical target may have a center height greater than either end such that flux generated during processing for a center region of the cylindrical target is directed away from the opening. In some embodiments, a magnetron assembly disposed within the cylindrical target is rotatable such that flux generated during processing for a center region of the cylindrical target is directed away from the opening or towards the opening. 1. A magnetron assembly for a cylindrical target , comprising:a magnet yoke;a first polarity magnet assembly on the magnet yoke; anda second polarity magnet assembly on the magnet yoke, the second polarity magnet assembly surrounding the first polarity magnet assembly,wherein a magnetic field strength between the first polarity magnet assembly and the second polarity magnet assembly varies along a length of the magnetron assembly such the magnetic field strength is less in a center region of the magnetron assembly than in outer regions of the magnetron assembly.2. The magnetron assembly of claim 1 , wherein the first polarity magnet assembly or the second polarity magnet assembly uses magnetic materials with less magnetic field strength in the center region of the magnetron assembly than in the outer regions of the magnetron assembly such that the magnetic field strength along the length of the magnetron assembly varies.3. The magnetron assembly of claim 1 , wherein the first polarity magnet assembly or the second polarity magnet assembly uses fewer magnetic ...

TARGET ASSEMBLY FOR SAFE AND ECONOMIC EVAPORATION OF BRITTLE MATERIALS

The present invention discloses a target assembly which allows safe, fracture-free and economic operation of target materials with low fracture toughness and/or bending strength during arc evaporation processes as well as in sputtering processes. The present invention discloses a target assembly for PVD processes, comprising a target, and a target holding device (), characterized in that the target () comprises a first bayonet lock and the target holding device () comprises a counterbody for the first bayonet lock of the target and a second bayonet lock for engaging the target assembly in the cooling means of the deposition chamber. 1. A target assembly for PVD processes comprising:a target for operation in an arc or sputtering plasma, and a target holding device, wherein the target comprises a first bayonet lock and the target holding device comprises a counterbody for the first bayonet lock of the target and a second bayonet lock for engaging the target assembly in a cooling means of a deposition chamber, wherein [{'sub': '1', 'a target front side to be exposed to the arc or sputtering plasma during operation which exhibits a first outer diameter Dbeing a largest diameter of the target corresponding to a first portion of the target, and'}, {'sub': 2', '1, 'a second inner diameter Dcorresponding to a second portion of the target being smaller than D, and'}, 'a target backside designed to be in contact with the cooling means, and', {'sub': 2', '1, 'at least two target protrusions in a third portion of the target, which protrude along a circumference of the target body over the inner diameter Din a radial direction but do not protrude over the outer diameter D, the target protrusions thereby form a first part of the first bayonet lock, and'}], 'the target further comprises 'at least two sets of outer and inner protrusions, wherein the inner protrusions form the counterbody for the first bayonet lock of the target protrusions and the outer protrusions form the second ...

SPUTTERING TARGET AND METHOD OF PRODUCING THIN FILM BY USING SPUTTERING TARGET

There is provided a sputtering target for forming an amorphous film, the sputtering target including an electrically conductive mayenite compound, wherein electron density of the electrically conductive mayenite compound is greater than or equal to 3×10cm, and wherein the electrically conductive mayenite compound includes one or more elements that are selected from a group including C, Fe, Na, and Zr. 1. A sputtering target for forming an amorphous film , the sputtering target including an electrically conductive mayenite compound ,{'sup': 20', '−3, 'wherein electron density of the electrically conductive mayenite compound is greater than or equal to 3×10cm, and'}wherein the electrically conductive mayenite compound includes one or more elements that are selected from a group including C, Fe, Na, and Zr.2. The sputtering target according to claim 1 ,wherein the electrically conductive mayenite compound includes the one or more elements that are selected from a group including C, Fe, and Zr.3. The sputtering target according to claim 1 ,wherein the electrically conductive mayenite compound includes Na.4. The sputtering target according to claim 1 ,wherein the sputtering target is any one of a disk-shaped flat target having a diameter of greater than or equal to 50 mm, a rectangular flat target such that a size of a long side is greater than or equal to 50 mm, and a cylindrical target such that a height of a cylinder is greater than or equal to 50 mm.5. A method of producing a thin film of an electride of an amorphous oxide including a calcium atom and an aluminum atom claim 1 ,wherein the thin film of the electride of the amorphous oxide including the calcium atom and the aluminum atom is formed on a substrate by a sputtering method while using a sputtering target under a low oxygen partial pressure atmosphere,wherein the sputtering target includes an electrically conductive mayenite compound,{'sup': 20', '−3, 'wherein electron density of the electrically conductive ...

PVD APPARATUS FOR DIRECTIONAL MATERIAL DEPOSITION, METHODS AND WORKPIECE

Directional material deposition in physical vapor deposition (PVD) technology. In particular, the invention concerns PVD apparatus, which comprises a vacuum tight outer vessel accommodating a material source, at least two substrates arranged to define a substrate plane spaced apart from said material source, substrates facing the material source with a surface to be treated. The diameter of this material source is smaller, in particular significantly smaller, than the diameter of any of the substrates. Narrow angular distribution and a high level of uniformity is achieved at low substrate temperature. 2. The apparatus according to claim 1 , wherein the PVD apparatus is a sputtering apparatus claim 1 , in particular a magnetron sputtering apparatus.3. The apparatus according to claim 1 , wherein the material source is at least one of:a single source,a sputtering target, andoriented substantially parallel to the substrate plane.4. The apparatus according to claim 1 , wherein the number of substrates is 2 or at least 3 or at least 4 claim 1 , in particular 3 or 4 and/or each of the centres of the substrates are arranged on a circle and equally spaced from each other claim 1 , said circle being located in the substrate plane.5. The apparatus according to claim 1 , wherein the substrates are rotatable during PVD processing claim 1 , in particular in a planetary motion.6. The apparatus according to claim 1 , wherein the substrates are tiltable to form a tilt angle with the substrate plane claim 1 , wherein in particular the tilt angle is between 0-20° claim 1 , further in particular between 0-15°.7. The apparatus according to claim 1 , wherein the distance between the material source and the substrate plane is between 6-20 times larger than the diameter of the material source claim 1 , in particular 6-10 times larger claim 1 , further in particular 7-9 times larger.8. The apparatus according to claim 1 , wherein the diameter of an individual substrate is between 2-6 ...

FILM FORMING APPARATUS

A film forming apparatus includes a stage provided in the processing chamber; three or more targets uniformly arranged along a circle centering around a vertical axis line that passes through a center of the stage, each of the targets having a substantially rectangular shape; a shutter provided between the targets and the stage, the shutter including an opening which allows one of the targets to be selectively exposed to the stage; and a rotation shaft coupled to the shutter, the rotation shaft extending along the vertical axis line. A width of the opening in a tangent direction to the circle centering around the vertical axis line is set such that two adjacent targets in a circumferential direction of the circle among the targets are allowed to be partially and simultaneously exposed to the stage. 1. A film forming apparatus comprising:a processing chamber;a stage provided in the processing chamber;three or more targets uniformly arranged along a circle centering around a vertical axis line that passes through a center of the stage in a vertical direction, each of the targets having a substantially rectangular shape;a gas supply unit configured to supply a gas into the processing chamber;a power supply configured to generate a negative DC voltage to be applied to the targets;a shutter provided between the targets and the stage, the shutter including an opening which allows one of the targets to be selectively exposed to the stage; anda rotation shaft coupled to the shutter, the rotation shaft extending along the vertical axis line,wherein a width of the opening in a tangent direction to the circle centering around the vertical axis line is set such that two adjacent targets in a circumferential direction of the circle among the targets are allowed to be partially and simultaneously exposed to the stage.2. The film forming apparatus of claim 1 , wherein the width of the opening is greater than a minimum distance between two adjacent targets in the circumferential ...

SPUTTERING APPARATUS

A sputtering apparatus includes a chamber, a target section disposed in the chamber, and a stage facing the target section. The target section includes a first target having a first diameter and a second target having a second diameter different from the first diameter. The first target and the second target each extend in a longitudinal direction and have a cylindrical shape, and the first and second diameters are respectively measured along a cross-section of corresponding first and second targets taken along a direction perpendicular to the longitudinal direction. 1. A sputtering apparatus , comprising:a chamber; a first target having a first diameter; and', 'a second target having a second diameter different from the first diameter; and, 'a target section disposed in the chamber, the target section comprisinga stage facing the target section,wherein:the first target and the second target each extend in a longitudinal direction and have a cylindrical shape; andthe first and second diameters are respectively measured along a cross-section of corresponding first and second targets taken along a direction perpendicular to the longitudinal direction.2. The sputtering apparatus of claim 1 , wherein the first diameter is greater than the second diameter.3. The sputtering apparatus of claim 2 , wherein:first targets are respectively disposed on both ends of the target section; andthe second target is disposed between the first targets.4. The sputtering apparatus of claim 3 , further comprising:a substrate disposed on the stage,wherein the distance between the first target and the substrate is less than the distance between the second target and the substrate.5. The sputtering apparatus of claim 2 , wherein the distance between the first target and the stage is less than the distance between the second target and the stage.6. The sputtering apparatus of claim 1 , wherein the first target and the second target are disposed in plural.7. The sputtering apparatus of claim 6 ...

FILM FORMING APPARATUS AND FILM FORMING METHOD

A film forming apparatus includes a processing container, a substrate holder configured to hold a substrate inside the processing container, a cathode unit disposed above the substrate holder, and a gas introducing mechanism configured to introduce a plasma generating gas into the processing container. The cathode unit includes a target, a power supply configured to supply electric power to the target, a magnet provided on a rear side of the target, and a magnet driving part configured to drive the magnet. The magnet driving part includes an oscillation driver configured to oscillate the magnet along the target, and a perpendicular driver configured to drive the magnet in a direction perpendicular to a main surface of the target independently of driving performed by the oscillation driver. Sputtered particles are deposited on the substrate by magnetron sputtering. 1. A film forming apparatus comprising:a processing container;a substrate holder configured to hold a substrate inside the processing container;a cathode unit disposed above the substrate holder; anda gas introducing mechanism configured to introduce a plasma generating gas into the processing container,wherein the cathode unit further comprises:a target configured to emit sputtered particles to the substrate;a power supply configured to supply electric power to the target;a magnet provided on a rear side of the target, and configured to apply a leakage magnetic field to the target; anda magnet driving part configured to drive the magnet, andwherein the magnet driving part comprises:an oscillation driver configured to oscillate the magnet along the target; anda perpendicular driver configured to drive the magnet in a direction perpendicular to a main surface of the target independently of driving performed by the oscillation driver,wherein magnetron plasma is formed near the target, and the sputtered particles are deposited on the substrate by magnetron sputtering.2. The film forming apparatus of claim 1 , ...

Hot tile sputtering system

A method of sputter coating a glass substrate includes providing a glass substrate and providing a sputtering assembly for sputtering a coating onto the glass substrate in a vacuum deposition chamber. The sputtering assembly includes a backing plate and a separating element disposed on the backing plate. At least one target element is provided and disposed at and in contact with a surface of the separating element. The target element is not bonded the separating element when disposed at and in contact with the surface of the separating element. An expansion gap is provided at or adjacent to the target element to allow for expansion of the target element during the sputtering process. Material from the target element is sputtered and the target element is heated to a substantially elevated temperature during the sputtering process. The sputtering process coats a surface of the glass substrate with the target element material.

MAGNETRON PLASMA APPARATUS

A magnetron plasma apparatus boosted by hollow cathode plasma includes at least one electrically connected pair of a first hollow cathode plate and a second hollow cathode plate placed opposite to each other at a separation distance of at least 0.1 mm and having an opening following an outer edge of a sputter erosion zone on a magnetron target so that a magnetron magnetic field forms a perpendicular magnetic component inside a hollow cathode slit between plates and, wherein the plates and are connected to a first electric power generator together with the magnetron target to generate a magnetically enhanced hollow cathode plasma in at least one of a first working gas distributed in the hollow cathode slit and a second working gas admitted outside the slit in contact with a magnetron plasma generated in at least one of the first working gas and the second working gas. 110-. (canceled)11. A method of plasma processing , comprising:providing a magnetron sputtering apparatus comprising a magnetron target and having a magnetron magnetic field giving form to a spatial shape of a magnetron plasma;providing a hollow cathode comprising an electrically connected pair of a first hollow cathode plate and a second hollow cathode plate separated from each other allowing a hollow cathode effect to be excited in a slit between said first hollow cathode plate and said second hollow cathode plate, wherein said magnetron magnetic field forms a perpendicular magnetic induction component inside said slit; andusing said perpendicular magnetic induction component inside said slit to magnetically enhance a hollow cathode plasma formed by said hollow cathode.12. The method of claim 11 , wherein said perpendicular magnetic induction component inside said slit is parallel to a pendulum motion of electrons in said hollow cathode effect in said hollow cathode.13. The method of claim 11 , further comprising placing at least one of said first hollow cathode plate and said second hollow cathode ...

Sputtering Target And Method For Production Thereof

A sputtering target according to the disclosure includes 5 wtppm to 10,000 wtppm of Cu and the balance of In and has a relative density of 99% or more and an average grain size of 3,000 μm or less. 1. A sputtering target comprising:5 wtppm to 10,000 wtppm of Cu; andthe balance of In,the sputtering target having a relative density of at least 99%, an average grain size of at most 3,000 μm and an oxygen concentration of at most 20 wtpmm.2. The sputtering target according to claim 1 , wherein the average grain size is from 10 μm to 1 claim 1 ,000 μm.3. The sputtering target according to claim 2 , wherein the average grain size is from 10 μm to 500 μm.4. The sputtering target according to claim 3 , wherein the average grain size is from 10 μm to 300 μm.5. (canceled)6. The sputtering target according to claim 1 , further comprising at most 100 wtppm of at least one selected from S claim 1 , Cd claim 1 , Zn claim 1 , Se claim 1 , Mg claim 1 , Ca claim 1 , and Sn.7. The sputtering target according to claim 1 , which has a cylindrical shape.8. A method for producing a sputtering target claim 1 , the method comprising:forming a sputtering target raw material in such a manner that the sputtering target raw material is bonded to a surface of a supporting substrate, wherein the sputtering target raw material comprises 5 wtppm to 10,000 wtppm of Cu and the balance of In; andthen subjecting the sputtering target raw material to plastic working in a thickness direction of the sputtering target raw material at a thickness reduction rate in the range of 10% to 80%.9. The method for producing a sputtering target according to claim 8 , wherein the sputtering target raw material further comprises at most 100 wtppm claim 8 , in total claim 8 , of at least one selected from S claim 8 , Cd claim 8 , Zn claim 8 , Se claim 8 , Mg claim 8 , Ca claim 8 , and Sn.10. The method for producing a sputtering target according to claim 8 , wherein the supporting substrate is a cylindrical backing ...

Ion Source Device, Sputtering Apparatus and Method

An ion source device () includes a first magnetron cathode () and a second magnetron cathode (), each having a respective central longitudinal axis (M, M) and an ion source unit () that emits ions to pass through a space between the cathodes, a surface () of the ion source unit facing generally the cathodes, the central longitudinal axes being spaced apart from each other by a distance A, a shortest line (D) joining a surface of the cathodes is of a distance B, a centre of the ion source unit lying on a line (E) perpendicular to and bisecting the shortest line, the shortest distance between the surface of the ion source unit and the shortest line is C, with B>10 mm and C<4 A. 1. An ion source device including:at least a first magnetron cathode and a second magnetron cathode, each having a respective central longitudinal axis, andan ion source unit with a surface facing generally said first magnetron cathode and said second magnetron cathode,wherein said ion source unit is adapted to emit ions to pass through a space between said first magnetron cathode and said second magnetron cathode.2. A device according to claim 1 , wherein said central longitudinal axis of said first magnetron cathode and said central longitudinal axis of said second magnetron cathode are spaced apart from each other by a distance A claim 1 , wherein a shortest line joining a surface of said first magnetron cathode and a surface of said second magnetron cathode is of a distance B claim 1 , wherein a centre of said ion source unit lies on a line substantially perpendicular to and bisecting said shortest line claim 1 , wherein a shortest distance between said surface of said ion source unit and said shortest line is C claim 1 , and wherein B>10 mm and C<4 A.3. A device according to claim 1 , wherein at least one of said first magnetron cathode and said second magnetron cathode is in a shape of a cylinder or rectangular prism.4. A device according to claim 1 , wherein said ion source unit is in a ...

TARGET MATERIAL FOR SPUTTERING AND METHOD FOR MANUFACTURING SAME

Provided is a sputtering target having extremely low occurrence of arcing or nodules, and a method for manufacturing such a sputtering target. A flat plate-shaped or cylindrical target material () is obtained by processing a material composed of an oxide sintered body. In doing so, a grindstone having a specified grade is used to perform rough grinding of a surface of the material that will become a sputtering surface () one or more times in accordance to the grade of the grindstone, after which zero grinding is performed one or more times so that the surface roughness of the sputtering surface () has an arithmetic mean roughness Ra of 0.9 μm or more, a maximum height Rz of 10.0 μm or less, and Rzroughness of 7.0 μm or less. A sputtering target () is obtained by bonding the obtained target material () to a backing body () by way of a bonding layer (). 1. A target material for sputtering composed of an oxide sintered body and having a sputtering surface , the surface roughness of the sputtering surface having an arithmetic mean roughness Ra of 0.9 μm or more , a maximum height Rz of 10.0 μm or less , and a 10-point mean roughness Rzof 7.0 μm or less.2. The target material for a sputtering surface according to claim 1 , wherein the arithmetic mean roughness Ra is within the range 0.9 μm to 1.5 μm claim 1 , the maximum height Rz is within the range 5.0 μm to 10.0 μm claim 1 , and the 10-point mean roughness Rzis within the range 4.0 μm to 7.0 μm.3. A manufacturing method for a target material for sputtering claim 1 , comprising a processing process of obtaining a target material for sputtering by processing a material that is composed of an oxide sintered body; wherein in the processing process claim 1 , rough grinding using a grindstone having a specified grade is performed on a surface of the target material for sputtering of the material that will become the sputtering surface claim 1 , after which zero grinding is performed so that the surface roughness of the ...

Plasma Process and Reactor for the Thermochemical Treatment of the Surface of Metallic Pieces

The reactor (R) has a reaction chamber (RC) provided with a support (S) for metallic pieces and with a system of an anode, connected to a ground, and of a cathode system connected to the support (S) and to a pulsating DC power supply. In the reaction chamber (RC), heated and supplied with a gas load, is formed, by means of an electric discharge in the cathode, a gas plasma. A liquid or gas precursor is admitted in at least one tubular cracking chamber associated with a high voltage energy source. It may be provided at least one tubular sputtering chamber associated with an electric power supply receiving a solid precursor. A potential difference is applied between the anode and one and/or other of said tubular chambers, to release the alloy elements to be ionically bombarded against the metallic pieces, either simultaneously or individually and in any order. 112-. (canceled)13. A process for the thermochemical treatment of the surface of metallic pieces , in a plasma reactor (R) having a reaction chamber (RC) provided with: a support (S) carrying the metallic pieces; a system of anode and cathode having one of its electrodes associated with a high voltage pulsating DC power supply; an inlet of ionizable gas load; and an outlet , for exhaustion of gas load , characterized in that it comprises the steps of:a) connecting the anode to a first electrode and to a ground and connecting the cathode to the support (S), operating as the other electrode of the system of anode and cathode, and to a negative potential of the pulsating DC power supply;b) statically positioning the metallic pieces in the support (S) associated with the cathode in the interior of the reaction chamber (RC);c) surrounding the support (S) and the metallic pieces with an ionizable gas load supplied to the reaction chamber (RC) through the inlet;d) heating the interior of the reaction chamber (RC) to a working temperature;e) applying to the cathode, associated with the support (S) and with the metallic ...

High throughput Vacuum Deposition Sources and System

A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber. 1. A high throughput deposition apparatus , comprising:a process chamber;a plurality of deposition sources that form a first closed loop in the process chamber;a first substrate carrier assembly configured to hold one or more substrates inside the first closed loop, wherein the one or more substrates are configured to face outward to receive a deposition material from the plurality of deposition sources in the first closed loop, wherein the deposition sources are configured to produce vapor for chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD); anda transport mechanism configured to move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.2. The high throughput deposition apparatus of claim 1 , further comprising:a plurality of deposition sources that form a second closed loop in the process chamber; anda second substrate carrier assembly configured to hold one or more substrates and configured to receive a deposition material from the plurality of deposition sources in the second closed loop, wherein the one or more substrates held by the second substrate carrier assembly are parallel to the one or more substrates held by the first substrate carrier assembly.3. The high throughput deposition apparatus of claim 1 , wherein the ...

SPUTTERING TARGET

A sputtering target comprising a flat part and a tapered part, wherein a machined groove for use in ignition is arranged on a sputtering surface of the target. With the sputtering target of the present invention, the ignition failure rate during ignition (plasma ignition) can be reduced, and the sputtering process can be started stably. It is thereby possible to shorten the downtime of the device, and consequently contribute to improved throughput and enhanced cost performance. 1. A sputtering target comprising a flat part and a tapered part on a sputtering surface , wherein a machined groove is arranged on a tapered part of the sputtering target.2. The sputtering target according to claim 1 , wherein an area ratio of the machined groove of the tapered part of the sputtering surface is 0.6% or more.3. The sputtering target according to claim 2 , wherein an area ratio of the machined groove of the flat part of the sputtering surface is 10% or less.4. The sputtering target according to claim 3 , wherein a depth of the machined groove is 0.1 mm or more.5. The sputtering target according to claim 4 , wherein the sputtering target is formed from tantalum having a purity of 4N5 or higher.6. The sputtering target according to claim 5 , wherein a cross-section shape of the machined groove is a V-shape claim 5 , a U-shape claim 5 , or a square shape.7. The sputtering target according to claim 1 , wherein an area ratio of the machined groove of the flat part of the sputtering surface is 10% or less.8. The sputtering target according to claim 1 , wherein a depth of the machined groove is 0.1 mm or more.9. The sputtering target according to claim 1 , wherein the sputtering target is formed from tantalum having a purity of 4N5 or higher.10. The sputtering target according to claim 1 , wherein a cross-section shape of the machined groove is a V-shape claim 1 , a U-shape claim 1 , or a square shape. The present invention relates to a sputtering target capable of stably performing ...

VACUUM ION SPUTTERING TARGET DEVICE

A vacuum ion sputtering target device is disclosed, which has an accommodating space provided with a substrate, a magnetron, a target, and a back plate disposed therein. The target is disposed above the back plate, the magnetron is provided below the back plate, the substrate is disposed above the target; wherein a shape of the target depends on a distribution of a magnetic field strength. Target utilization is quiet high, and there is basically no target remaining, so costs will be reduced. 1. A vacuum ion sputtering target device , comprising: an accommodating space provided with a substrate , a magnetron , a target , and a back plate therein , the target being disposed above the back plate , the magnetron being provided below the back plate , the substrate being disposed above the target; wherein a shape of the target depends on a distribution of a magnetic field strength; wherein the target has a greater thickness in a region corresponding to a higher magnetic field strength , the target has a smaller thickness in a region corresponding to a lower magnetic field strength; the target is an integrally molded structure;wherein during a vacuum sputtering process, the magnetron generates a magnetic field between the target and the substrate, when the accommodating space is provided with plasma, the plasma accelerated in the electric field hits the target, and sputters a large number of target atoms, the target atoms are deposited on the substrate to form a thin film.2. The vacuum ion sputtering target device as claimed in claim 1 , wherein when the distribution of the magnetic field strength shows a wavy shape claim 1 , a lower surface of the target shows the wavy shape claim 1 , an upper surface of the back plate shows the wavy shape claim 1 , and a peak at the lower surface of the target matches to a valley at the upper surface of the back plate claim 1 , so that the target and the back plate are closely combined.3. The vacuum ion sputtering target device as ...

System, method and support for coating eyeglass lenses

An installation, a carrier, and a method for coating eyeglass lenses are proposed, wherein a carrier with eyeglass lenses held in a rotatable manner is conveyed in succession in different coating devices or coating lines, in order to coat in an alternating manner opposite sides of the eyeglass lenses and/or to apply different coatings. In particular, the carriers with the eyeglass lenses are conveyed from a coating device or coating line by means of an evacuated transfer chamber to another coating device or coating line.

Tubular target and method of producing a tubular target

A tubular target is formed of refractory metal or a refractory metal alloy. The target has at least one tubular portion X with a relative density RDx and at least one tubular portion Y with a relative density RDy. At least one tubular portion X has, at least in some regions, a larger outer diameter than a tubular portion Y at least in some regions. A density ratio satisfies the relation (RDy−RDx)/RDy≧0.001. There is also described a method for producing a tubular target from refractory metal or refractory metal alloy by sintering and local deformation of different degree. The tubular target has a more uniform sputter removal over the entire surface area compared with prior tubular targets. The tubular targets do not exhibit any tendency to arcing or to particle regeneration.

PHYSICAL VAPOR DEPOSITION (PVD) TARGET HAVING LOW FRICTION PADS

Embodiments of target assemblies for use in substrate processing chambers are provided herein. In some embodiments, a target assembly includes a plate comprising a first side including a central portion and a support portion; a target disposed on the central portion; a plurality of recesses formed in the support portion; and a plurality of pads partially disposed in the plurality of recesses. 1. A target assembly for a substrate processing chamber , comprising:a plate comprising a first side including a central portion and a support portion, wherein the central portion is configured to support target source material;a plurality of recesses formed in the support portion; anda plurality of pads partially disposed in the plurality of recesses.2. The target assembly of claim 1 , wherein the plurality of recesses are circumferentially spaced around the plate.3. The assembly of claim 1 , wherein the plurality of recesses are similarly sized.4. The target assembly of claim 1 , wherein the plurality of pads are press fit into corresponding ones of the plurality of recesses to provide interference with the recess.5. The target assembly of claim 4 , wherein the interference is about 0.15 mm along an edge of the recess.6. The target assembly of claim 1 , wherein each of the plurality of pads is secured to the support portion via a fastener disposed through the pad.7. The target assembly of claim 6 , wherein each of the plurality of pads includes a bearing surface claim 6 , a countersunk recess having a first diameter that extends partially into a body of the pad claim 6 , and a through hole having a second diameter that is smaller than the first diameter.8. The target assembly of claim 7 , wherein the fastener is disposed in the countersunk recess and through hole.9. The target assembly of claim 8 , wherein a head of the fastener is one of countersunk below the bearing surface or planar with the bearing surface.10. The target assembly of claim 8 , wherein a shaft of the ...

TARGET, ADAPTED TO AN INDIRECT COOLING DEVICE, HAVING A COOLING PLATE

A device for cooling a target, having a component that includes a cooling duct and having an additional thermally conductive plate that is detachably fastened to the cooling side of the component, the cooling side being the side on which the cooling duct exerts its cooling action, characterized in that between the additional thermally conductive plate and the cooling side of the component, a first self-adhesive carbon film is provided, which is extensively and self-adhesively glued to the one side of the additional thermally conductive plate that faces the cooling side. 1. A device for cooling a target , comprising:a component that includes a cooling duct and having an additional thermally conductive plate that is detachably fastened to a cooling side of the component, the cooling side being the side on which the cooling duct exerts its cooling action, wherein between the additional thermally conductive plate and the cooling side of the component, a first self-adhesive carbon film is provided, which is extensively and self-adhesively glued to a side of the additional thermally conductive plate that faces the cooling side.2. The device for cooling a target according to claim 1 , wherein on a side of the additional thermally conductive plate opposite the side that faces the cooling side of the component claim 1 , a second self-adhesive carbon film is provided claim 1 , which is glued to the additional thermally conductive plate in an extensive claim 1 , self-adhesive fashion.3. The device according to claim 1 , wherein the additional thermally conductive plate contains copper and/or molybdenum.4. The device according to claim 1 , wherein the additional thermally conductive plate is selected to be thick enough that it lends the self-adhesive carbon film(s) sufficient stability for a simple handling.5. The device according to claim 4 , wherein the additional thermally conductive plate is at least 3 millimeters thick.6. A target with a cooling device according to claim 1 ...

TARGET FOR PVD SPUTTERING SYSTEM

Embodiments of apparatus for physical vapor deposition are provided. In some embodiments, a target assembly for use in a substrate processing system to process a substrate includes a plate having a first side and an opposing second side, wherein the second side comprises a target supporting surface extending from the second side in a direction normal to the second side, wherein the target supporting surface has a first diameter and is bounded by a first edge; and a target having a first side bonded to the target supporting surface, wherein a diameter of the target is greater than the first diameter of the target supporting surface.

Sputtering cathode, sputtering device, and method for producing film-formed body

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

SPUTTERING SOURCE ARRANGEMENT, SPUTTERING SYSTEM AND METHOD OF MANUFACTURING METAL-COATED PLATE-SHAPED SUBSTRATES

For coating substrates (S) having along their surfaces to be coated high aspect ratio vias, a sputtering system has a sputtering source arrangement, which includes a first DC pulse operated magnetron sub-source () and a second frame-shaped magnetron sub-source () which latter is arranged, in the system, between the substrate (S) and the first magnetron sub-source (). The second magnetron sub-source () may be operated in DC, pulsed DC, thereby also HIPIMS mode. The first magnetron sub-source () is advantageously also operated in HIPIMS mode. The substrate (S) is biased by an Rf power source (). 1. A sputtering source arrangement comprisingA second magnetron sub-source with a close-frame shaped second target of said material and along the periphery of and electrically isolated from said first target, said second target having a second sputtering surface arranged around said geometric axis, a second magnet arrangement along and adjacent a back-surface of said second target, so as to establish a second magnetron magnetic field along said second sputtering surface.Around a geometric axis, a first magnetron sub-source with a first target of a material having a first sputtering surface defining a plane perpendicular to said geometric axis and comprising a first magnet arrangement adjacent a back surface of said first target, drivingly movable along said first sputtering surface so as to establish a moving close loop first magnetron magnetic field, movable along said first sputtering surface;2. The sputtering source arrangement of claim 1 , wherein said first target is at least one of plane and of circular.3. The sputtering source arrangement of claim 1 , wherein said second sputtering surface defines claim 1 , in a cross-sectional planes containing said geometric axis claim 1 , a pair of substantially straight lines.4. The sputtering source arrangement of claim 1 , wherein said second sputtering surface defines around said geometric axis claim 1 , a surface one of parallel ...

SURROUNDING FIELD SPUTTERING SOURCE

A sputtering cathode includes a magnet having a body of length L defining a north magnetic pole at a first end of the body and a south magnetic pole at a second, opposite end of the body. A sputtering target of length L surrounds the body of the magnet, but not ends of the magnet. 1. A sputtering cathode comprising:{'b': '1', 'a magnet having a body of length L defining a north magnetic pole at a first end of the body and a south magnetic pole at a second, opposite end of the body; and'}{'b': '2', 'a sputtering target of length L surrounding the body of the magnet, but not ends of the magnet.'}22. The sputtering cathode of claim 1 , wherein magnetic field lines produced by the magnet extend in a direction of length L along an outward facing surface of the sputtering target.3121. The sputtering cathode of claim 1 , wherein (0.75·L)≦L≦L.4. The sputtering cathode of claim 1 , wherein the sputtering target is made from a single material.5. The sputtering cathode of claim 1 , wherein:the sputtering target is comprised of multiple pieces of material; andeach piece is made from the same material.6. The sputtering cathode of claim 1 , wherein:the sputtering target is comprised of plural pieces of material; andeach piece is made from a different material.7. The sputtering cathode of claim 1 , further including a plurality of magnets surrounded by the sputtering target8. The sputtering cathode of claim 7 , wherein:the north magnetic poles of the plurality of magnets are oriented facing a first direction; andthe south magnetic poles of the plurality of magnets are oriented facing a second, opposite direction.9. The sputtering cathode of claim 7 , wherein the plurality of magnets is positioned side-by-side in spaced relation claim 7 , in a plane.10. The sputtering cathode of claim 9 , wherein longitudinal axes of the plurality of magnets extend in the same direction.11. The sputtering cathode of claim 10 , wherein longitudinal axes of the plurality of magnets are parallel.12. ...

SPUTTERING TARGET PACKAGING STRUCTURE AND METHOD OF PACKAGING SPUTTERING TARGET

A sputtering target packaging structure comprising: 1. A sputtering target packaging structure comprising:a sputtering target including a cylinder part, a flange part disposed on an opening part at one end of the cylinder part, and a cap disposed on an opening part at the other end of the cylinder part; anda packing material made up of a sheet and covering an inner surface and an outer surface of the sputtering target in a close contact state, whereinthe packing material includes seal parts on both end sides of the sputtering target.2. The sputtering target packaging structure according to claim 1 , wherein the seal parts are located outside both ends of the sputtering target.3. The sputtering target packaging structure according to claim 1 , wherein a vacuum state is achieved between the packing material and the sputtering target.4. The sputtering target packaging structure according to claim 1 , wherein a gap between the flange part of the sputtering target and the packing material of the packaging structure is less than 10 mm after one week under atmospheric pressure at 20° C. from the time of packaging.5. A sputtering target packaging structure comprising:a sputtering target including a cylinder part, a flange part disposed on an opening part at one end of the cylinder part, and a cap disposed on an opening part at the other end of the cylinder part; anda packing material made up of a sheet, whereina vacuum state is achieved between the sputtering target and the packing material and/or the sputtering target and the packing material are in a close contact state, and whereina gap between the flange part of the cylindrical sputtering target and the packing material is less than 10 mm after one week under atmospheric pressure at 20° C. from the time of packaging.6. The sputtering target packaging structure according to claim 1 , wherein the packing material has a characteristic of hardly allowing permeation of oxygen and water.7. The sputtering target packaging ...

ELECTROCHROMIC DEVICES

Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices. In various embodiments, a counter electrode is fabricated to include a base anodically coloring material and one or more additives. 1. (canceled)2. A method of fabricating an electrochromic device , the method comprising:(a) forming a cathodically coloring layer comprising a cathodically coloring electrochromic material;(b) forming an anodically coloring layer comprising an anodically coloring electrochromic material and one or more additives, wherein the cathodically coloring layer and the anodically coloring layer are in contact with one another to form a stack;(c) exposing the stack to lithium; and(d) heating the stack to form an ionically conducting and electrically insulating material at an interface between the cathodically coloring layer and the anodically coloring layer.3. The method of claim 2 , wherein (a) comprises forming a superstoichiometric oxygenated form of the cathodically coloring electrochromic material.4. The method of claim 2 , wherein the cathodically coloring electrochromic material comprises at least one metal oxide selected from the group consisting of: tungsten oxide claim 2 , molybdenum oxide claim 2 , niobium oxide claim 2 , titanium oxide claim 2 , vanadium oxide claim 2 , and combinations thereof.5. The method of claim 4 , ...

CONTOURED TARGET FOR SPUTTERING

Provided herein is an apparatus that includes a body with a top surface and a recess in the top surface. The top surface, excluding the recess, is substantially planar. The recess is confined to an area that is defined by an inner diameter of the top surface of the body. 1. An apparatus , comprising:a body with a substantially planar top surface having an inner diameter, a middle diameter and an outer diameter,wherein the top surface is substantially planar from the outer diameter to the middle diameter, andwherein the outer diameter is defined by an edge of the body; and a recess located within an area of the top surface defined by the inner diameter,wherein a thickness of the body in the recess is less than a thickness of the body at the outer diameter.2. The apparatus of claim 1 ,wherein a centroid of the recess is located proximate to a center of the top surface of the body.3. The apparatus of claim 2 ,wherein the thickness of the body in the recess at the centroid is in a range of approximately 80% to 99.9% the thickness of the body at the outer diameter, as measured from a bottom surface of the body to the top surface of the body.4. (canceled)5. The apparatus of claim 4 ,wherein the middle diameter includes a diameter that is approximately half of the outermost diameter of an edge of the body.6. The apparatus of claim 5 ,wherein the recess has a depth in a range of approximately 0.1% to approximately 20% of the thickness of the body at the outer diameter.7. The apparatus of claim 1 ,wherein the recess has a radius of curvature in a range of approximately 0.1 inches to approximately 10 inches.8. The apparatus of claim 1 , wherein:the body has a diameter of 6.5 inches; andthe recess has a diameter of approximately 1 inch.9. The apparatus of claim 1 ,wherein the body comprises cobalt and an oxide.10. An apparatus claim 1 , comprising:a body with a top surface; and wherein the top surface excluding the recess is substantially planar, and', 'wherein the recess is ...

HIGH-POWER RESONANCE PULSE AC HEDP SPUTTERING SOURCE AND METHOD FOR MATERIAL PROCESSING

A method of sputtering using a high energy density plasma (HEDP) magnetron includes configuring an anode and cathode target magnet assembly in a vacuum chamber with a sputtering cathode target and substrate, applying regulated unipolar voltage pulses to a tunable pulse forming network, and adjusting amplitude and frequency of the unipolar voltage pulses to cause a resonance mode associated with the tunable pulse forming network and an output AC waveform generated from the pulse forming network. The output AC waveform is operatively coupled to the sputtering cathode target, and the output AC waveform includes a negative voltage exceeding the amplitude of the unipolar voltage pulses during sputtering discharge of the HEDP magnetron. An increase in the amplitude of the unipolar voltage pulses causes a constant amplitude of the negative voltage of the output AC waveform in response to the pulse forming network being in the resonance mode, thereby causing the HEDP magnetron sputtering discharge to form the layer on the substrate. A corresponding apparatus and computer-readable medium are disclosed. 1. A method of sputtering a layer on a substrate using a high energy density plasma (HEDP) magnetron , the method comprising:positioning the HEDP magnetron in a vacuum chamber with a sputtering cathode target and the substrate;providing feed gas;applying a plurality of unipolar voltage pulses comprising high frequency voltage oscillations to a pulse forming network, the pulse forming network comprising a plurality of inductors and capacitors; andadjusting an amplitude and a frequency associated with the plurality of unipolar voltage pulses to cause a resonance mode associated with the pulse forming network and an output AC voltage waveform generated from the pulse forming network, the output AC voltage waveform operatively coupled to the sputtering cathode target from the HEDP magnetron, the output AC voltage waveform comprising a negative voltage and a positive voltage, an ...

MANUFACTURING METHOD OF CYLINDRICAL SPUTTERING TARGET MATERIAL

A manufacturing method of a cylindrical sputtering target material formed of copper or a copper alloy is provided, the method including: a continuous casting step of casting a cylindrical ingot having an average crystal grain diameter equal to or smaller than 20 mm using a continuous casting machine or a semi-continuous casting machine; and a cold working step and a heat treatment step of repeatedly performing cold working and a heat treatment with respect to the cylindrical ingot, to form the cylindrical sputtering target material in which an average crystal grain diameter of an outer peripheral surface is from 10 μm to 150 μm and a proportion of the area of crystal grains having a crystal grain diameter more than double the average crystal grain diameter is less than 25% of the entire crystal area. 1. A manufacturing method of a cylindrical sputtering target material formed of copper or a copper alloy , the method comprising:a continuous casting step of casting a cylindrical ingot having an average crystal grain diameter equal to or smaller than 20 mm using a continuous casting machine or a semi-continuous casting machine; anda cold working step and a heat treatment step of repeatedly performing cold working and a heat treatment with respect to the cylindrical ingot or a cylindrical worked material obtained by working the cylindrical ingot, to form the cylindrical sputtering target material in which an average crystal grain diameter of an outer peripheral surface is from 10 μm to 150 μm and a proportion of the area of crystal grains having a crystal grain diameter more than double the average crystal grain diameter is less than 25% of the entire crystal area.2. The manufacturing method of a cylindrical sputtering target material according to claim 1 ,wherein a tube expansion step of increasing an outer diameter of the cylindrical ingot or the cylindrical worked material in a range exceeding 0% and equal to or smaller than 30% and changing a sectional area after ...

CYLINDRICAL SPUTTERING TARGET MATERIAL

Provided is a cylindrical sputtering target material formed of copper or a copper alloy, in which an average value of the special grain boundary length ratios Lσ/Lwhich are measured with respect to the outer peripheral surfaces of both end portions and the outer peripheral surface of the center portion in an axis O direction is set to be equal to or greater than 0.5, and each measured value is in a range of ±20% with respect to the average value of the special grain boundary length ratios Lσ/L, and the total amount of Si and C which are impurity elements is equal to or smaller than 10 mass ppm and the amount of O is equal to or smaller than 50 mass ppm. 1. A cylindrical sputtering target material formed of copper or a copper alloy ,{'sub': N', 'N', 'N', 'N, 'sup': 2', '2, 'wherein, when special grain boundary length ratios Lσ/Lare defined by a unit total grain boundary length Lwhich is obtained by measuring a total grain boundary length L of crystal grain boundaries in a measurement range and converting the total grain boundary length L into a value per unit area of 1 mmand a unit total special grain boundary length Lσwhich is obtained by measuring a total special grain boundary length Lσ of special grain boundaries in a measurement range and converting the total special grain boundary length Lσ into a value per unit area of 1 mmby an EBSD method;'}{'sub': N', 'N', 'N', 'N, 'an average value of the special grain boundary length ratios Lσ/Lwhich are measured with respect to outer peripheral surfaces of both end portions and an outer peripheral surface of a center portion in an axis direction is set to be equal to or greater than 0.5, and each value of special grain boundary length ratios Lσ/Lmeasured with respect to the outer peripheral surfaces of both end portions and the outer peripheral surface of the center portion in an axis direction is in a range of ±20% with respect to the average value; and'}a total amount of Si and C which are impurity elements is equal to ...

WARP CORRECTION METHOD FOR SPUTTERING TARGET WITH BACKING PLATE

Provided is a warp correction method which can correct warping in a warped sputtering target with a backing plate (BP) by a simple method. This warp correction method involves: an arrangement step of arranging a BP-attached sputtering target on a lower pressing surface of a pressing device in such a way that a target side located above, the pressing device including an upper pressing surface and the lower pressing surface opposing each other in a vertical direction, and of arranging a spacer between outer edge of the backing plate side of the BP-attached target and the lower pressing surface; and a pressing step of pressing the BP-attached target in the vertical direction by means of the pressing device after the arrangement step, wherein the target is a composite including at least one of metal oxide and carbon, the at least one of metal oxide and carbon being dispersed in a matrix metal. 1. A warp correction method for a sputtering target with a backing plate , the method being for decreasing warping in the sputtering target with the backing plate , the sputtering target being bonded to the backing plate through a brazing filler metal , the sputtering target with the backing plate being warped convexly on the sputtering target side and being warped concavely on the backing plate side , the method comprising:an arrangement step of arranging the sputtering target with the backing plate on a lower pressing surface of a pressing device in such a way that the sputtering target side located above, the pressing device including an upper pressing surface and the lower pressing surface opposing each other in a vertical direction, the pressing device being capable of pressing a substance to be pressed arranged on the lower pressing surface in the vertical direction, and of arranging a spacer between outer edge of the backing plate side of the sputtering target with the backing plate and the lower pressing surface of the pressing device; anda pressing step of pressing the ...

TANTALUM SPUTTERING TARGET

A tantalum sputtering target containing niobium and tungsten as essential components in a total amount of 1 massppm or more and less than 10 massppm, and having a purity of 99.9999% or higher excluding niobium, tungsten and gas components. Provided is a high purity tantalum sputtering target comprising a uniform and fine structure which is adjusted to be within an optimal range and which enables deposition of a uniform film at a high deposition rate in a stable manner. 1. A disk-shaped tantalum sputtering target having a diameter of 450 mmφ and containing niobium and tungsten as essential components in a total amount of 1 massppm or more and less than 10 massppm , and having a purity of 99.9999% or higher excluding niobium , tungsten and gas components , wherein an average crystal grain size is 50 μm or more and 150 μm or less , variation of the crystal grain size is 20% or less , deposition rate is 8 to 10 Å/sec , and sheet resistance distribution is 1.0 to 2.0%.23-. (canceled) The present invention relates to a high purity tantalum sputtering target comprising a uniform structure and which enables uniform sputtering at a high deposition rate in a stable manner.In recent years, the sputtering method for forming films from metals, ceramics and other materials has been used in numerous fields such as electronics, corrosion resistant materials and ornaments, catalysts, as well as in the manufacture of cutting/polishing materials and abrasion resistant materials.While the sputtering method itself is a well-known method in the foregoing fields, recently, particularly in the electronics field, a tantalum sputtering target suitable for forming films of complex shapes, forming circuits or forming barrier films is in demand.Generally speaking, this tantalum target is manufactured by repeating the forging and annealing (heat treatment) of an ingot or billet formed by performing electron beam melting and casting to a tantalum raw material, and thereafter performing rolling ...

TUBULAR TARGET

A target for a cathode atomization system has a tubular target body made of an atomization material and two connection pieces, fastenable to the target body, for connecting the target body to a cathode atomization system. A first connection piece is connectable to a first end of the target body and a second connection piece is connectable to a second end of the target body. At least one locking device is formed on each connection piece, in order to connect the respective connection piece to the target body so that it is secured against rotation. 111-. (canceled)12. A target for a cathode atomization system , comprising:a tubular target body formed of an atomization material, said target body having a first end and a second end;first and second connection pieces, connectable to said target body, for connecting said target body to the cathode atomization system, wherein said first connection piece is connectable to said first end of said target body and said second connection piece is connectable to said second end of said target body;at least one locking device formed on each of said first and second connection pieces and configured to secure the respective said connection piece against rotation relative to said target body.13. The target according to claim 12 , wherein said at least one locking device is integrally formed in one piece with the respective said connection piece.14. The target according to claim 12 , wherein said at least one locking device is configured to engage into at least one recess formed in said target body.15. The target according to claim 12 , wherein said at least one locking device is a flange having at least one recess formed therein.16. The target according to claim 12 , wherein said at least one locking device comprises a latching element configured to latch into a corresponding latching receptacle formed on said target body.17. The target according to claim 12 , wherein said at least one locking device is a bayonet closure element.18. ...

Sputtering Cathode, Sputtering Device, and Method for Producing Film-Formed Body

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

ROTATABLE SPUTTERING TARGET

A rotatable sputtering target has a target material, a back tube and a joint piece. The joint piece is disposed between the target material and the back tube. The joint piece has a compressible structure and an electrically and thermally conductive adhesive. Particularly, the compressible structure being a compressible blanket or a compressible sheet has multiple through holes and thus the electrically and thermally conductive adhesive is filled in the through holes and then directly formed between the target material and the back tube. Using the joint piece to joint the target material and the back tube not only maintains the joint strength but also elevates the tolerable power of the rotatable sputtering target, which can increase the sputtering efficiency. 1. A rotatable sputtering target comprising:a target material;a back tube;a joint piece disposed between the target material and the back tube;the joint piece comprising a compressible structure and an electrically and thermally conductive adhesive;the compressible structure being a compressible blanket or a compressible sheet and having multiple through holes, and the electrically and thermally conductive adhesive formed between the target material and the back tube and filled in the through holes.2. The rotatable sputtering target as claimed in claim 1 , wherein the joint piece is composed of the compressible structure adsorbed with the electrically and thermally conductive adhesive claim 1 , and the electrically and thermally conductive adhesive is filled into the through holes and formed between the target material and the back tube.3. The rotatable sputtering target as claimed in claim 1 , wherein the compressible structure is a graphite blanket claim 1 , a graphite sheet claim 1 , a carbon blanket claim 1 , a carbon sheet or any combination thereof.4. The rotatable sputtering target as claimed in claim 1 , wherein the thermal conductivity of the joint piece is more than 20 W/m.5. The rotatable sputtering ...

COPPER-GALLIUM SPUTTERING TARGET

A Ga-containing and Cu-containing sputtering target has a Ga content of from 30 to 68 at %. The sputtering target contains only CuGaas Ga-containing and Cu-containing intermetallic phase or the proportion by volume of CuGais greater than the proportion by volume of CuGa. The sputtering target is advantageously produced by spark plasma sintering or cold gas spraying. Compared to CuGa, CuGais very soft, which aids the production of defect-free sputtering targets having homogeneous sputtering behavior. 125-. (canceled)26. A sputtering target , comprising:a Ga content of from 30 to 68 at %; andat least one Ga-containing and Cu-containing intermetallic phase;{'sub': 2', '2', '9', '4, 'said at least one Ga-containing and Cu-containing intermetallic phase containing only CuGaor a proportion by volume of CuGabeing greater than a proportion by volume of CuGa.'}27. The sputtering target according to claim 26 , which further comprises regions having said at least one Ga-containing and Cu-containing intermetallic phase with an average microhardness of <500 HV0.01.28. The sputtering target according to claim 26 , wherein at least 90% of said Ga is present as CuGa.29. The sputtering target according to claim 26 , wherein said Ga content is from 40 to 68 at %.30. The sputtering target according to claim 26 , which further comprises a Cu-rich phase having a Cu content of >80 at % and being selected from the group consisting of pure Cu and Ga-containing Cu mixed crystal.31. The sputtering target according to claim 30 , wherein said Cu-rich phase is pure Cu.32. The sputtering target according to claim 26 , which further comprises >30% by volume of said CuGa.33. The sputtering target according to claim 26 , which further comprises a volume ratio of CuGa/CuGabeing >2.34. The sputtering target according to claim 26 , which further comprises a total of from 0.01 to 5 at % of at least one element selected from the group of alkali metals.35. A sputtering target claim 26 , comprising:a Ga ...

MONOCRYSTALLINE SILICON SPUTTERING TARGET

A sputtering target formed from monocrystalline silicon is provided, wherein a sputter surface of the sputtering target is a plane inclined at an angle that exceeds 1° and is less than 10° from a {100} plane. The sputtering target formed from monocrystalline silicon provides a sputtering target which yields superior mechanical strength as well as exhibiting a sputter performance which is equivalent to that of a {100} plane. From a different perspective, in addition to superior mechanical strength, the monocrystalline silicon sputtering target yields superior particle characteristics, sputtering rate, crack resistance, surface shape uniformity and other characteristics. 1. A sputtering target formed from monocrystalline silicon , wherein a sputter surface of the sputtering target is a plane inclined at an angle that exceeds 1° and is less than 10° from a {100} plane.2. The sputtering target according to claim 1 , wherein a mean value of three-point bending strengths at angles of 0° claim 1 , 15° claim 1 , 30° claim 1 , and 45° relative to a baseline which passes through a center of the sputter surface is 150 MPa or more.3. The sputtering target according to claim 2 , wherein a ratio of a difference between a maximum value and a minimum value relative to the mean value of the three-point bending strengths is 4.0% or less.4. The sputtering target according to claim 3 , wherein the sputter surface is a plane in which the {100} plane is rotated around a <110> axis.5. The sputtering target according to claim 4 , wherein the angle is 2° or more and 8° or less.6. The sputtering target according to claim 5 , wherein the monocrystalline silicon contains a p-type dopant or an n-type dopant.7. The sputtering target according to claim 6 , wherein the sputtering target has a diameter of 300 mm or more.8. The sputtering target according to claim 7 , wherein the sputtering target has a thickness of 4 mm or more.9. The sputtering target according to claim 3 , wherein the sputter ...

SPUTTERING DEVICE COMPONENT WITH MODIFIED SURFACE AND METHOD OF MAKING

A sputtering target assembly for use in a vapor deposition apparatus, the sputtering target assembly comprising a sputtering surface; a sidewall extending from the sputtering surface at an angle to the sputtering surface; a particle trap formed of a roughness located along the sidewall and extending radially from the sputtering surface, wherein the roughness of the particle trap has a macrostructure and a microstructure. 1. A sputtering target assembly for use in a vapor deposition apparatus , the sputtering target assembly comprising:a sputtering surface;a sidewall formed on a second surface extending from the sputtering surface at an angle to the sputtering surface; anda particle trap formed of a roughness on the second surface, the particle trap extending radially from the sputtering surface;wherein the sputtering target assembly has a carbon atomic concentration of less than 40 percent at a depth less than 80 angstroms from the sputtering surface.2. The sputtering target assembly of claim 1 , wherein the particle trap includes a macrostructure and a microstructure.3. The sputtering target assembly of claim 2 , wherein the macrostructure defines a first surface roughness having a first height and the microstructure defines a second surface roughness having a second height claim 2 , and wherein the second height is less than one half the first height.4. The sputtering target assembly of claim 1 , wherein the particle trap includes a macrostructure that includes projections formed by a CNC lathe and a microstructure that includes a surface texture formed on the projections by bead blasting.5. The sputtering target assembly of claim 1 , wherein the particle trap includes a macrostructure formed by a CNC lathe and a microstructure formed on the macrostructure by bead blasting and plasma etching.6. The sputtering target assembly of claim 2 , wherein the macrostructure comprises projections formed by a CNC lathe and the microstructure comprises a surface texture formed ...

Tablet for plasma coating system, method of manufacturing the same, and method of manufacturing a thin film using the method of manufacturing the tablet

A tablet for a plasma coating system having a first part that includes a first material having a first sublimation point at a first pressure and a second part that is disposed on the first part and comprises a second material having a second melting point at the first pressure, wherein the second melting point is lower than the first sublimation point.

Methods and apparatus for multi-cathode substrate processing

Methods and apparatus for processing substrates with a multi-cathode chamber. The multi-cathode chamber includes a shield with a plurality of holes and a plurality of shunts. The shield is rotatable to orient the holes and shunts with a plurality of cathodes located above the shield. The shunts interact with magnets from the cathodes to prevent interference during processing. The shield can be raised and lowered to adjust gapping between a target of a cathode and a hole to provide a dark space during processing.

SPUTTERING TARGET AND PROCESS FOR PRODUCING IT

A sputtering target is composed of an Mo alloy containing at least one metal of group 5 of the Periodic Table, where the average content of group 5 metal is from 5 to 15 at % and the Mo content is ≧80 at %. The sputtering target has an average C/O ratio in (at %/at %) of ≧1. The sputtering targets can be produced by shaping or forming and have an improved sputtering behavior. 122-. (canceled)23. A sputtering target , comprising:an Mo alloy containing at least one metal of group 5 of the Periodic Table;{'sub': 'M', 'an average content Cof the group 5 metal of from 5 to 15 at %;'}an Mo content of ≧80 at %; andan average CIO ratio of the sputtering target in (at %/at %) of ≧1.24. The sputtering target according to claim 23 , wherein the group 5 metal is completely dissolved in the Mo.25. The sputtering target according to claim 23 , wherein the sputtering target has a forming texture.26. The sputtering target according to claim 25 , wherein the forming texture has the following dominant orientations:a. in a forming direction: 110; andb. perpendicular to the forming direction: at least one orientation selected from the group consisting of 100 and 111.27. The sputtering target according to claim 25 , which further comprises a dand a dof a grain size distribution claim 25 , measured perpendicular to a last forming direction claim 25 , satisfying the following relationship: d/d≦5.28. The sputtering target according to claim 23 , which further comprises an O content of ≦0.04 at %.29. The sputtering target according to claim 23 , wherein the sputtering target is free of oxides.30. The sputtering target according to claim 23 , which further comprises a relative density being >99.5% of a theoretical density.31. The sputtering target according to claim 23 , wherein the group 5 metal is uniformly distributed in solution claim 23 , and a standard deviation a of the group 5 metal distribution satisfies the following relationship: σ≦C×0.15.32. The sputtering target according to ...

VACUUM PROCESSING APPARATUS AND METHOD FOR VACUUM PROCESSING SUBSTRATES

A vacuum treatment apparatus includes a vacuum treatment recipient with a circular opening between an inside and exterior of the recipient. The recipient houses a turntable, which defines a plane (P) along its table surface, is drivingly rotatable around a central axis perpendicular to plane (P), and exhibits a plurality of circular substrates supports. The opening is arranged such that during a turn of the turntable the area of each of the substrate supports and the opening are fully aligned and completely face each other. The vacuum treatment apparatus also includes a PVD deposition source attached to the opening. The PVD source has a a circular material target and a static magnet arrangement. The magnet arrangement is arranged in a plane (M) in parallel to plane (P) and is not rotationally symmetric around a central axis running centrally through the magnet arrangement and being perpendicular to the plane (M). 1. A vacuum treatment apparatus comprising{'b': 12', '13', '12', '1, 'claim-text': defines a plane (P) along its table surface;', 'is drivingly rotatable around a central axis (B) perpendicular to plane (P)', {'b': 2', '9, 'and exhibits a plurality of circular substrate supports (, . . . );'}], 'a vacuum treatment recipient () with at least one sealable, circular opening () between an inside (i) and exterior (e) of said recipient (), said recipient housing a turntable (), which'}{'b': 13', '1', '2', '9', '13, 'said at least one opening () being arranged such that during a turn of the turntable () the area of each of the substrate supports (, . . . ) and the opening () are fully aligned and completely face each other;'}{'b': 14', '13, 'claim-text': {'b': 15', '11', '11, 'claim-text': being arranged in a plane (M) in parallel to plane (P); and', 'not being rotational symmetric around a central axis (C) running centrally through said magnet arrangement and being perpendicular to said plane (M)., 'said PVD source exhibiting at least a circular material target ...

SPUTTER TRAP HAVING MULTIMODAL PARTICLE SIZE DISTRIBUTION

A sputter trap formed on at least a portion of a sputtering chamber component has a plurality of particles and a particle size distribution plot with at least two different distributions. A method of forming a sputter trap having a particle size distribution plot with at least two different distributions is also provided. 1. A sputtering target assembly comprising:a front surface;a back surface opposite the front surface;a sputtering target on at least a portion of the front surface;a flange extending radially from the sputtering target; anda sputter trap formed on at least a portion of a front surface of the flange, the sputtering trap including a plurality of particles and having a particle size distribution plot with at least two distinct normal distributions, the plurality of particles comprising metals and metal alloys,wherein the sputtering target assembly is a monolithic sputtering target assembly.2. The sputtering target assembly of claim 1 , wherein the plurality of particles of the sputter trap include titanium particles claim 1 , titanium alloy particles or combinations thereof.3. The sputtering target assembly of claim 2 , wherein the plurality of particles of the sputter trap consist of titanium particles.4. The sputtering target assembly of claim 1 , wherein the plurality of particles of the sputter trap include nickel alloy particles.5. The sputtering target assembly of claim 1 , wherein the sputter trap has a surface roughness (Ra) of at least 38 μm.6. The sputtering target assembly of claim 1 , wherein the particle size distribution plot has at least three distinct normal distributions.7. A method of forming a sputter trap on a sputtering target assembly claim 1 , the method comprising:adhering particles to at least a portion the sputtering target assembly by a cold spray technique or a thermal spray technique, wherein the particle size distribution plot of the particles adhered has at least two distinct normal distributions, and the plurality of ...

Sputtering Cathode, Sputtering Cathode Assembly, and Sputtering Apparatus

The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target. 1. A sputtering device , comprising: a hollow sputtering target with a rectangular interior region and having a rectangular tubular configuration that extends in a lengthwise direction with a rectangular cross-section taken transverse to the lengthwise direction, the sputtering target having an open end at each end thereof and comprising a) a pair of major side walls that extend in the lengthwise direction of the sputtering target and that oppose each other across the rectangular interior region of the sputtering target, with opposing inner surfaces of the major side walls constituting sputtering erosion surfaces; and b) a pair of short side walls that extend in the lengthwise direction of the sputtering target and that oppose each other across the rectangular interior region of the sputtering target, the pair of short side walls connecting the pair of major side walls such that the rectangular interior region of the sputtering target is bounded by and delimited by the pair of major side walls along long sides thereof and by the pair of short side walls along short sides thereof;', 'a magnetic field-generating assembly consisting of a pair of permanent-magnet units disposed near outer surfaces of each of the major side walls of the sputtering target with one permanent-magnet unit disposed toward each open end of the sputtering ...

DURABLE 3D GEOMETRY CONFORMAL ANTI-REFLECTION COATING

Methods and systems for depositing a thin film are disclosed. The methods and systems can be used to deposit a film having a uniform thickness on a substrate surface that has a non-planar three-dimensional geometry, such as a curved surface. The methods involve the use of a deposition source that has a shape in accordance with the non-planar three-dimensional geometry of the substrate surface. In some embodiments, multiple layers of films are deposited onto each other forming multi-layered coatings. In some embodiments, the multi-layered coatings are antireflective (AR) coatings for windows or lenses.

CYLINDRICAL SPUTTERING TARGET, CYLINDRICAL COMPACT, MANUFACTURING METHOD OF CYLINDRICAL SPUTTERING TARGET, AND MANUFACTURING METHOD OF CYLINDRICAL SINTERED COMPACT

A cylindrical sputtering target includes a plurality of cylindrical sintered compacts adjacent to each other while having a space therebetween. The plurality of cylindrical sintered compacts have a relative density of 99.7% or higher and 99.9% or lower. The plurality of cylindrical sintered compacts adjacent to each other have a difference therebetween in the relative density of 0.1% or smaller. 1. A cylindrical sputtering target , comprising:a plurality of cylindrical sintered compacts adjacent to each other while having a space therebetween, the plurality of cylindrical sintered compacts containing ITO or IGZO and having a relative density of 99.7% or higher and 99.9% or lower, and the plurality of cylindrical sintered compacts adjacent to each other having a difference therebetween in the relative density of 0.1% or smaller.2. A manufacturing method of a cylindrical sputtering target , comprising:sintering a plurality of cylindrical compacts having a relative density of 54.5% or higher and 58.0% or lower and containing ITO or IGZO to form a plurality of cylindrical sintered compacts having a relative density of 99.7% or higher and 99.9% or lower; andlocating the plurality of cylindrical sintered compacts to be adjacent to each other having a difference therebetween in the relative density of 0.1% or smaller.3. The manufacturing method of a cylindrical sputtering target according to claim 2 , further comprising performing cold isostatic pressing at a pressure of 100 MPa or higher and 200 MPa or lower to form the plurality of cylindrical compacts.4. A manufacturing method of a cylindrical sintered compact claim 2 , comprising:sintering a cylindrical compact having a relative density of 54.5% or higher and 58.0% or lower and containing ITO or IGZO, the cylindrical sintered compact having a relative density of 99.7% or higher and 99.9% or lower.5. The manufacturing method of a cylindrical sintered compact according to claim 4 , further comprising performing cold ...

Sputtering Target Assembly

Provided is a sputtering target assembly comprising two or more sputtering target-backing plate bonded bodies B aligned in the width direction, wherein the sputtering target-backing plate bonded bodies B each include a cylindrical target having a diameter of 100 mm or more and a length of 1000 mm or more and composed of three or more target pieces A being divided such that the dividing lines lie in the circumferential direction and being bonded or placed onto a cylindrical or columnar backing plate, wherein the bonded bodies B are arranged to form the sputtering target assembly in such a manner that the dividing lines between the three target pieces of one bonded body B are not present at the same positions of the dividing lines between fractional target pieces of adjacent another bonded body B. It is an object of the present invention to provide a sputtering target assembly that can reduce defects due to occurrence of particles originated from the piece-bonding area.

CYLINDRICAL SPUTTERING TARGET

A cylindrical sputtering target includes a cylindrical substrate and a cylindrical sputtering target member joined together with a joining material. Where the joining material has a thickness of d (μm), the joining material has a coefficient of thermal expansion of α(μm/μmK), and a melting point of the joining material and room temperature have a difference of ΔT (K), a surface of the cylindrical sputtering target member on the side of the joining material has a value of ten-point average roughness (Rz) fulfilling: 1. A cylindrical sputtering target , comprising:a cylindrical substrate and a cylindrical sputtering target member joined together with a joining material;{'sub': '1', 'claim-text': {'br': None, 'i': d', 'T', 'Rz, 'sub': '1', '(μm)×α(μm/μmK)×Δ(K)≦(μm).'}, 'wherein where the joining material has a thickness, estimated from a difference between an inner diameter of the cylindrical sputtering target member and an outer diameter of the cylindrical substrate, of d (μm), the joining material has a coefficient of thermal expansion of α(μm/μmK), and a melting point of the joining material and room temperature have a difference of ΔT (K), a surface of the cylindrical sputtering target member on the side of the joining material has a value of ten-point average roughness (Rz) fulfilling2. The cylindrical sputtering target according to claim 1 , wherein the surface of the cylindrical sputtering target member on the side of the joining material has a value of arithmetic average roughness (Ra) fulfilling:{'br': None, 'i': d', 'T', 'Ra, 'sub': '1', '(μm)×α(μm/μmK)×Δ(K)×0.1≦(μm).'}3. The cylindrical sputtering target according to claim 1 , wherein the cylindrical sputtering target member is formed of ITO claim 1 , IZO claim 1 , IGZO or ITZO.4. The cylindrical sputtering target according to claim 1 , wherein the joining material contains In or InSn.5. The cylindrical sputtering target according to any one of claim 1 , wherein the joining material has a thickness d ...

DUAL POWER FEED ROTARY SPUTTERING CATHODE

A rotary sputtering cathode assembly is provided that comprises a rotatable target cylinder having a first end and an opposing second end. A first power transfer apparatus is configured to carry radio frequency power to the first end of the target cylinder, and a second power transfer apparatus is configured to carry radio frequency power to the second end of the target cylinder. Radio frequency power signals are simultaneously delivered to both of the first and second ends of the target cylinder during a sputtering operation. 1. A rotary sputtering cathode assembly , comprising:a rotatable target cylinder having a first end and an opposing second end;a first end-block connected to the first end of the rotatable target cylinder, wherein the first end block includes a first set of rotary water seals configured to provide separation between water and atmosphere, and a first set of rotary vacuum seals configured to provide separation between vacuum and atmosphere;a first power transfer apparatus operatively coupled to the first end-block, the first power transfer apparatus including a first power supply bus and a first static conductive element coupled to the first power supply bus, wherein the first static conductive element is in contact with a first rotary electrical contact connected to the rotatable target cylinder;a second end-block coupled to the second end of the rotatable target cylinder, wherein the second end block includes a second set of rotary water seals configured to provide separation between water and atmosphere, a second set of rotary vacuum seals configured to provide separation between vacuum and atmosphere;a second power transfer apparatus operatively coupled to the second end-block, the second power transfer apparatus including a second power supply bus and a second static conductive element coupled to the second power supply bus, wherein the second static conductive element is in contact with a second rotary electrical contact connected to the ...

APPARATUS CONFIGURED FOR SPUTTER DEPOSITION ON A SUBSTRATE, SYSTEM CONFIGURED FOR SPUTTER DEPOSITION ON A SUBSTRATE, AND METHOD FOR SPUTTER DEPOSITION ON A SUBSTRATE

The present disclosure provides an apparatus configured for sputter deposition on a substrate. The apparatus includes a cylindrical sputter cathode rotatable around a rotational axis, and a magnet assembly configured to provide a first plasma racetrack and a second plasma racetrack on opposite sides of the cylindrical sputter cathode, wherein the magnet assembly includes two, three or four magnets each having two poles and one or more sub-magnets, wherein the two, three or four magnets are configured for generating both the first plasma racetrack and the second plasma racetrack. 1. An apparatus configured for sputter deposition on a substrate , comprising:a cylindrical sputter cathode rotatable around a rotational axis; anda magnet assembly within the cylindrical sputter cathode and configured to provide a first plasma racetrack and a second plasma racetrack, wherein the magnet assembly includes two, three or four magnets each having two poles and one or more sub-magnets, wherein the two, three or four magnets are configured for generating both the first plasma racetrack and the second plasma racetrack.2. The apparatus of claim 1 , wherein the two claim 1 , three or four magnets are three magnets including a first magnet having one or more first sub-magnets and a pair of second magnets each having one or more second sub-magnets claim 1 , and wherein the first magnet and the pair of second magnets are configured for generating both the first plasma racetrack and the second plasma racetrack.3. The apparatus of claim 1 , wherein the magnet assembly is stationary in the cylindrical sputter cathode.4. The apparatus of claim 2 , wherein the first magnet is centered in the cylindrical sputter cathode.5. The apparatus of claim 2 , wherein the first magnet and the pair of second magnets are symmetrical with respect to the rotational axis of the cylindrical sputter cathode.6. The apparatus of claim 1 , wherein the magnet assembly is configured to provide the first plasma ...

Cathode Assembly

A cathode assembly is provided in which, while preventing the occurrence of abnormal electric discharging between a projected portion of a backing plate and a side surface of a target, particles can be prevented from being generated. The cathode assembly for a sputtering apparatus of this invention has: a target made of an insulating material; a backing plate bonded to one surface of the target; and, where such a side of the backing plate as is on the side of the target is defined as a lower side, an annular shield plate disposed to lie opposite to the lower side of that projected portion of the backing plate which is projected outward beyond an outer peripheral end of the target. The cathode assembly has a bonding portion arranged to be protruded relative to the projected portion. An inner peripheral edge portion of the shield plate is positioned in a clearance between that extended portion of the target which is extended outward beyond the bonding portion in a state in which the target is kept bonded to the bonding portion, and the projected portion of the backing plate.

SPUTTERING TARGET

A sputtering target comprising a target material, wherein a sputtering face of the target material has a ramp provided to reduce a thickness of the target material at a position where erosion concentrates most intensively during sputtering. 1. A sputtering target comprising a target material , wherein a sputtering face of the target material has a ramp provided to reduce a thickness of the target material at a position where erosion concentrates most intensively during sputtering.2. The sputtering target according to claim 1 , wherein the position where the erosion concentrates most intensively is a part with a maximum horizontal magnetic field strength during sputtering.3. The sputtering target according to claim 1 ,wherein the sputtering face has a circular shape, andthe ramp is formed at a position in a range of 60% or more and less than 90% of a diameter of the sputtering face so as to reduce the thickness of the target material toward a peripheral part of the sputtering face in the radical direction of the sputtering face.4. The sputtering target according to claim 3 , wherein the target material includes a flat circular first region positioned at a center of the sputtering face claim 3 , a flat ring-shaped second region positioned around the first region claim 3 , and a flat ring-shaped third region positioned around the second region claim 3 ,wherein the ramp exists between the second region and the third region, and a thickness of the third region is smaller than a thickness of the second region;wherein the thickness of the third region is equal to or larger than a thickness of the first region and a diameter of the first region accounts for 14% or more and less than 60% of the diameter of the sputtering face; andwherein an inner diameter of the third region accounts for less than 90% of the diameter of the sputtering face.5. The sputtering target according to claim 4 , wherein a ratio of the thickness of the third region to a ring width of the third region ...

Indium Cylindrical Sputtering Target And Manufacturing Method Thereof

Provided are an indium cylindrical sputtering target capable of providing good film thickness distribution and a method for production thereof. The indium cylindrical target comprises crystal grains whose average size is 1 mm to 20 mm over its surface to be sputtered. The method for manufacturing the indium cylindrical target includes the steps of: casting a semi-finished product of an indium cylindrical target integrated with a backing tube; and subjecting the semi-finished product to plastic working in its radial direction, wherein the plastic working is performed with a total thickness reduction rate of at least 10% over its longitudinal direction. 1. An indium cylindrical target comprising crystal grains whose average size is 1 mm to 20 mm over its surface to be sputtered.2. The indium cylindrical target according to claim 1 , comprising crystal grains with a straight-line grain boundary on its surface to be sputtered claim 1 , wherein the straight-line grain boundary has a protrusion of grain boundary from a line segment defined by a straight line drawn between adjacent corners of a crystal grain and has an at least 50 μm long straight-line region claim 1 , the protrusion being less than 0.1 mm in a direction of a normal to the line segment.3. The indium cylindrical target according to claim 2 , wherein at least part of the straight-line grain boundary is a coincidence boundary.4. The indium cylindrical target according to claim 3 , wherein the coincidence boundary has a Σ value of 7.5. The indium cylindrical target according to claim 2 , wherein an area proportion of the crystal grains with a straight-line grain boundary is at least 5%.6. The indium cylindrical target according to claim 1 , wherein the standard deviation of average crystal grain size is 6 mm or less over its surface to be sputtered.7. The indium cylindrical target according to claim 1 , wherein the standard deviation of average crystal grain sizes at three places including a central portion ...

SPUTTERING TARGET WITH BACKSIDE COOLING GROOVES

Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.

SPUTTERING TARGETS AND METHODS

Multi-component sputtering target structures suitable for deposition of metallic alloy films are provided. The multi-component target may be formed by winding wires of different materials around a target support structure to form a dense winding. The sputtering target structures and methods of the invention can be used to produce a variety of refractory metal alloy films. 1. A sputtering target structure comprisinga) a tubular target support; and i) a first component of a first material, the first component being coiled around the target support;', 'ii) a second component of a second material, the second component being coiled around the target support;, 'b) a multi-component target at least partially covering the outer surface of the target support, the multi-component target comprising'}wherein the coils of the first and the second component are interlocking and are in contact with each other and the target support.2. The sputtering target structure of claim 1 , wherein the first and the second component are each in the form of a coiled wire.3. The sputtering target structure of claim 2 , wherein the cross-section of each of the first and the second component is circular.4. The sputtering target structure of wherein the diameter of the first and the second component is from 0.20 to 3 mm.5. The sputtering target structure of claim 2 , wherein the cross-section of each of the first and the second component is other than circular claim 2 , the first component is described by a first maximum height and a first maximum width and the second component is described by a second maximum width and a second maximum height claim 2 ,6. The sputtering target structure of claim 5 , wherein a first contact region is formed between the outer surface of the first component and the outer surface of the target support where the width of the first contact region is greater than or equal to 2% the average width of the first component.7. The sputtering target structure of claim 5 , ...

Profiled sputtering target and method of making the same

A sputtering target comprising a sputtering material and having a non-planar sputtering surface prior to erosion by use in a sputtering system, the non-planar sputtering surface having a circular shape and comprising a central axis region including a concave curvature feature at the central axis region. The central axis region having a wear profile after erosion by use in a sputtering system for at least 1000 kWhrs including a protuberance including a first outer circumferential wear surface having a first slope. A reference, protruding convex curvature feature for a reference target after sputtering use for the same time includes a second outer circumferential wear surface having a second slope. The protuberance provides a sputtered target having reduced shadowing relative to the reference, protruding convex curvature feature, wherein the first slope is less steep than a second slope.

HEAT-TRANSFER ROLLER FOR SPUTTERING AND METHOD OF MAKING THE SAME

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed. 1. A cylindrical heat-transfer roller for cooling or heating an item passing around the roller , comprising:a cylinder wall encircling a hollow interior of the roller and having two opposite ends;an end plate attached to each of the two ends of the cylinder wall; anda centrally located shaft member extending from each end plate to support the roller for rotation about a longitudinally extending central axis of the roller;wherein one or more flow-through passages are embedded within the cylinder wall and provide a conduit or conduits through which a heat-transfer medium can flow from near one end of the cylinder wall to the other end of the cylinder wall;wherein each of the shaft members has a longitudinally extending central passage that is in fluid communication with the one or more flow-through passages in the cylinder wall near a respective one of the two ends of the cylinder wall; andwherein through-holes are formed in the end plates so that the hollow interior of the roller is in fluid communication with exterior regions surrounding the roller, whereby pressure can be ...

DESIGN AND ASSEMBLY OF GRADED-OXIDE TANTALUM POROUS FILMS FROM SIZE-SELECTED NANOPARTICLES AND DENTAL AND BIOMEDICAL IMPLANT APPLICATION THEREOF

A porous film made of size-selected tantalum nanoparticles is formed on a substrate, the porous film having a graded oxidation profile perpendicular to a surface of the substrate. 1. A porous film made of size-selected tantalum nanoparticles , formed on a substrate , the porous film having a graded oxidation profile perpendicular to a surface of the substrate.2. The porous film made of size-selected tantalum nanoparticles according to claim 1 , wherein oxidation of the tantalum nanoparticles is higher on a top surface of the film and is progressively lower towards a bottom surface of the film that is on the substrate.3. The porous film made of size-selected tantalum nanoparticles according to claim 1 , further comprising a mono-disperse layer of silver (Ag) deposited on the porous film claim 1 , thereby providing enhanced antimicrobial properties.4. The porous film made of size-selected tantalum nanoparticles according to claim 2 , further comprising a mono-disperse layer of silver (Ag) deposited on the porous film claim 2 , thereby providing enhanced antimicrobial properties.5. A dental implant comprising:an implant base; anda porous film made of size-selected tantalum nanoparticles, formed on the implant base, the porous film having a graded oxidation profile perpendicular to a surface of the implant base.6. The dental implant according to claim 5 , wherein oxidation of the tantalum nanoparticles in the porous film is higher on a top surface of the film and is progressively lower towards a bottom surface of the film that is on the implant base.7. The dental implant according to claim 5 , further comprising a monodisperse layer of silver (Ag) deposited on the porous film claim 5 , thereby providing enhanced antimicrobial properties.8. The dental implant according to claim 6 , further comprising a monodisperse layer of silver (Ag) deposited on the porous film claim 6 , thereby providing enhanced antimicrobial properties.9. The dental implant according to claim 5 , ...

METHODS FOR SURFACE PREPARATION OF SPUTTERING TARGET

Methods for finishing a sputtering target to reduce particulation and to reduce burn-in time are disclosed. The surface of the unfinished sputtering target is blasted with beads to remove machining-induced defects. Additional post-processing steps include dust blowing-off, surface wiping, dry ice blasting, removing moisture using hot air gun, and annealing, resulting in a homogeneous, ultra-clean, residual-stress-free, hydrocarbon chemicals-free surface. 1. A method for finishing a surface of a sputtering target , comprising:blasting the surface of the sputtering target with spherical beads to remove machining defects and contaminants from the surface.2. The method of claim 1 , further comprising cleaning the blasted surface.3. The method of claim 2 , wherein the cleaning is performed by blowing off the surface claim 2 , wiping the surface claim 2 , blasting the surface using dry ice (solid CO) claim 2 , blowing hot air over the surface to remove moisture claim 2 , and combinations thereof.4. The method of claim 2 , wherein the cleaning is performed by dry ice blasting claim 2 , and subsequently blowing hot air over the surface to remove moisture5. The method of claim 1 , further comprising annealing the sputtering target to remove surface residual stress.6. The method of claim 5 , wherein the annealing is conducted with inert gas protection or under vacuum.7. The method of claim 1 , wherein the beads are made of zirconia claim 1 , alumina claim 1 , silica claim 1 , or another metal oxide.8. The method of claim 1 , wherein the sputtering target comprises tantalum (Ta) claim 1 , iridium (Ir) claim 1 , cobalt (Co) claim 1 , ruthenium (Ru) claim 1 , tungsten (W) claim 1 , an iron-cobalt-boron alloy claim 1 , or magnesium oxide claim 1 , or an alloy selected from the group consisting of FeCoB claim 1 , FeCoB claim 1 , FeCoB.9. The method of claim 1 , wherein the beads have an average particle size of from about 10 microns to about 100 microns.10. The method of claim 1 , ...

ELECTRICALLY AND MAGNETICALLY ENHANCED IONIZED PHYSICAL VAPOR DEPOSITION UNBALANCED SPUTTERING SOURCE

A method of depositing a layer on a substrate includes applying a first magnetic field to a cathode target, electrically coupling the cathode target to a first high power pulse resonance alternating current (AC) power supply, positioning an additional cylindrical cathode target electrode around the cathode, applying a second magnetic field to the additional cylindrical cathode target electrode, electrically coupling the additional cylindrical cathode target electrode to a second high power pulse resonance AC power supply, generating magnetic coupling between the cathode target and an anode, providing a feed gas, and selecting a time shift between negative voltage peaks associated with AC voltage waveforms generated by the first high power pulse resonance AC power supply and the second high power pulse resonance AC power supply. An apparatus includes a vacuum chamber, cathode target magnet assembly, first high power pulse resonance AC power supply, additional electrode, additional electrode magnet assembly, second high power pulse resonance AC power supply, and feed gas. 1. A method of depositing a layer on a substrate , the method comprising:applying a first magnetic field to a cathode target, the first magnetic field generating an unbalanced magnetic field and a magnetron configuration on the cathode target;electrically coupling the cathode target to a first high power pulse resonance alternating current (AC) power supply;positioning an additional cylindrical cathode target electrode around the cathode;applying a second magnetic field to the additional cylindrical cathode target electrode, the second magnetic field forming a magnetron configuration on the cylindrical cathode target electrode;electrically coupling the additional cylindrical cathode target electrode to a second high power pulse resonance AC power supply;generating magnetic coupling between the cathode target and an anode;providing a feed gas;igniting plasma discharge with at least one of the first ...

Upright target structure and sputtering equipment

An upright target structure includes a target main body. The target main body has a first surface and a second surface opposite to each other. The first surface is configured to connect with a back plate. The target main body further has a third surface, a fourth surface, a fifth surface and a sixth surface. The third surface connects with the first surface and the second surface. The fourth surface is opposite to the third surface and connects with the first surface. The fifth surface is opposite to the third surface and connects with the second surface. The sixth surface connects with the fourth surface and the fifth surface. The sixth surface is away from the first surface as getting close to the fifth surface.

SPUTTERING TARGET

Objects of the present invention consist in achievement of both of elongation of life of a sputtering target as well as uniformity of a thickness of a resulting thin coating layer formed on a substrate during the period. The present invention provides a sputtering target comprising a target material, which is characterized in that the target material has a sputtering surface having a first area placed at the center, which is circular and flat; and a second area placed outside of the first area and concentrically with the first area, which has a ring shape, wherein the first area is positioned at a location lower than that of the second area by 15% of thickness of the second area at most, and the first area has a diameter which is ranging from 60% to 80% of a circumferential diameter of the sputtering surface. 1. A sputtering target comprising a target material , which is characterized in that a first area placed at the center, which is circular and flat; and', 'a second area placed outside of the first area and concentrically with the first area, which has a ring shape,, 'the target material has a sputtering surface having'}wherein the first area is positioned at a location lower than that of the second area by 15% of thickness of the second area at most, and the first area has a diameter which is ranging from 60% to 80% of a circumferential diameter of the sputtering surface.2. The sputtering target according to claim 1 , which is characterized in that the first area is positioned at a location lower than that of the second area by from 4% to 12% of thickness of the second area.3. The sputtering target according to claim 1 , which is characterized in that the first area of the target material has a thickness from 20 mm to 30 mm.4. The sputtering target according to claim 1 , which is characterized in that the second area of the target material has a thickness from 25 mm to 35 mm.5. The sputtering target according to claim 1 , which is characterized in that the ...

SILICON SPUTTERING TARGET WITH ENHANCED SURFACE PROFILE AND IMPROVED PERFORMANCE AND METHODS OF MAKING THE SAME

A sputtering target assembly and method of manufacturing the sputtering target assembly is provided. The sputtering target assembly may have a target blank. The target blank may have at least one planar surface with a thickness T and a concave center with a thickness T, wherein T is less than T 11221. A sputtering target assembly comprising a target blank and a backing plate , wherein said target blank has at least one planar surface with thickness T , a concave center with a thickness T and wherein T is less than T.2331. The sputtering target assembly of claim 1 , wherein said target blank further comprises a first beveled edge with a thickness T around a perimeter of said target blank and wherein T is less than T.3. The sputtering target assembly of claim 2 , wherein said target assembly is generally circular and wherein said first beveled edge is a continuous beveled edge around the circumference of said target blank.4. The sputtering target assembly of claim 1 , wherein said target blank comprises silicon (Si).5. The sputtering target assembly of claim 1 , wherein said backing plate is made of materials selected from the group consisting of Al claim 1 , Mo claim 1 , Ti claim 1 , Zr claim 1 , Ta claim 1 , Hf claim 1 , Nb claim 1 , W claim 1 , Cu claim 1 , combinations thereof claim 1 , and alloys thereof.6. The sputtering target assembly of claim 5 , wherein said backing plate is molybdenum with a purity equal to or greater than 2N5.7. The sputtering target assembly of claim 6 , wherein said backing plate is a molybdenum copper composite with copper diffusion bonded or coated to said pure molybdenum blank.81221. A method of making a sputtering target claim 6 , said method comprising machining a target blank to have a machined surface having at least one planar surface with a thickness T claim 6 , a concave center with a thickness T and wherein T is less than T.9331. The method of claim 8 , further comprising machining a first beveled edge with a thickness T ...

MAGNETIC ANODE FOR SPUTTER MAGNETRON CATHODE

A rotary sputter magnetron assembly for use in sputtering target material onto a substrate is provided. The assembly comprises a longitudinally extending target tube having a longitudinal central axis, said target tube extending about a magnet array that is configured to generate a plasma confining magnetic field adjacent the target tube, said target tube supported for rotation about its longitudinal central axis and a pair of side shunts positioned parallel to the longitudinal central axis, and on opposing lengthwise sides of said target tube. 1a longitudinally extending target tube having a longitudinal central axis, said target tube extending about a magnet array that is configured to generate a plasma confining magnetic field adjacent the target tube, said target tube supported for rotation about its longitudinal central axis; and. A rotary sputter magnetron assembly for use in sputtering target material onto a substrate, the assembly comprising: The present invention generally relates to magnetron cathode sputter apparatus. More specifically to the sputtering of indium tin oxide (ITO) on large substrates or over large areas.Indium tin oxide (ITO) is used in many applications because it is both optically clear and electrically conductive. Typically, ITO is deposited by magnetron sputtering. Recently, rotary magnetron ITO targets have become commercially available. Rotary magnetrons have several advantages over planar magnetrons including: Improved target cooling, stable operation, longer production runs and higher power operation. While these advantages are attractive, the desired ITO optical and electrical film properties, achieved with planar magnetron sputtering, have not been matched with existing rotary magnetron magnetic plasma confinement designs.In magnetron sputtering of ITO, the strength of the plasma confinement magnetic field significantly effects film properties. This sensitivity is less pronounced for other materials. In sputtering ITO, a strong ...

Sputtering Cathode, Sputtering Cathode Assembly, and Sputtering Apparatus

The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target.

Sputtering Cathode, Sputtering Cathode Assembly, and Sputtering Apparatus

The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target.

SPUTTERING TARGET WITH BACKSIDE COOLING GROOVES

Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate. 1. A sputtering target for a sputtering chamber , the sputtering target comprising: a plurality of circular grooves which are spaced apart from one another; and', 'at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of the sputtering plate; and, 'a sputtering plate with a backside surface having radially inner, middle and outer regions, the backside surface havingan annular-shaped backing plate mounted to the sputtering plate, wherein the annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.2. The sputtering target of claim 1 , wherein the circular grooves are concentric grooves.3. The sputtering target of claim 2 , wherein the circular grooves comprises from about 20 to about 30 grooves.4. The sputtering target of claim 1 , wherein all of the circular grooves are located at the radially middle region of the backside surface.5. The sputtering target of claim 1 , wherein the backside surface has at least 8 arcuate channels.6. The sputtering target of claim 5 , wherein the arcuate channels are spaced apart from one another by an angle of from about 30 to about 90 degrees ...

Sputtering Target for PVD Chamber

Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber. 1. A physical vapor deposition target comprising a front face defining sputterable target surface , the front face extending between peripheral edges of the target , the sputterable target surface defining an overall concave shape substantially between the peripheral edges , the overall concave shape defined by a substantially flat central region surrounded by a sloped region , wherein the target comprises one or more of aluminum , titanium or tungsten and the target peripheral edges define a target diameter Rand the flat central region has a diameter R , and the central region diameter is such that the ratio R/Ris about 68.5% , the sloped region has an angle of about 7 degrees such that a thickness at the peripheral edge of the target is in the range of about ⅛ inch to about ¾ inch and is greater than a thickness at the central region , and the angle of the sloped region and R/Rare configured to deposit a film of uniform thickness on a flat substrate surface.2. The physical vapor deposition target of claim 1 , wherein the sloped region extends to the peripheral edge.3. The physical vapor deposition target of claim 1 , wherein the sloped region extends to an outer peripheral front face area.4. The physical vapor deposition target of claim 3 , wherein the outer peripheral front face comprises not more than about 30% of sputterable surface area.5. The physical vapor deposition target of claim 1 , further comprising a backing plate in contact with a back face of the target.6. The physical vapor deposition target of claim 5 , wherein the backing plate is joined to the target by one or more of welding claim 5 , brazing or mechanical fasteners.7. The physical vapor deposition target of ...

(Ga) Zn Sn Oxide Sputtering Target

A sputtering target having a one-piece top coat comprising a mixture of oxides of zinc, tin, and optionally gallium, characterized in that said one-piece top coat has a length of at least 80 cm; a method for forming such a sputtering target and the use of such a target for forming films. 117-. (canceled)18. A sputtering target having a one-piece top coat of a length of at least 80 cm comprising a mixture of oxides of zinc , tin , and optionally gallium , wherein the mixture of oxides comprises zinc stannate oxide and the proportion of tin in said mixture of oxides relative to the total amount of gallium , zinc and tin is from 15 to 55 at %.19. The sputtering target according to claim 18 , wherein the proportion of Ga in said mixture of oxides relative to the total amount of Ga claim 18 , Zn and Sn is from 3 to 15 at %.20. The sputtering target according to claim 18 , wherein the proportion of Zn in said mixture of oxides relative to the total amount of Ga claim 18 , Zn and Sn is from 15 to 85 at %.21. The sputtering target according to claim 18 , wherein the sum of all zinc stannate oxides in at % present in said top coat is higher than any other oxide present therein.22. The sputtering target according to claim 18 , wherein the material constitutive of said one-piece top coat has a resistivity lower than 10 Ω·m claim 18 , said resistivity being measured by a four points probe resistivity measuring device having two outer probes claim 18 , said resistivity being measured on a one piece top coat of said material having a thickness of at least two times the outer probes distance of said device.23. The sputtering target according to claim 18 , wherein said top coat has a porosity of less than 10% as measured by cross-sectional SEM image analysis.24. The sputtering target according to claim 18 , wherein said mixture of oxides amounts for at least 99 at % of said top coat.25. The sputtering target according to having a cylindrical shape.26. The sputtering target ...