ОПТОЭЛЕКТРОННОЕ УСТРОЙСТВО ДЛЯ ВЫСОКОСКОРОСТНОЙ ПЕРЕДАЧИ ДАННЫХ, ОСНОВАННОЕ НА СДВИГЕ КРАЯ СТОП-ЗОНЫ РАСПРЕДЕЛЕННОГО БРЭГГОВСКОГО ОТРАЖАТЕЛЯ ЗА СЧЕТ ЭЛЕКТРООПТИЧЕСКОГО ЭФФЕКТА

Вертикально интегрированное оптоэлектронное устройство служит для высокоскоростной передачи данных путем прямой или непрямой модуляции интенсивности испускаемого света. Прибор включает в себя по меньшей мере один многослойный интерференционный отражатель и по меньшей мере один резонатор. В одном варианте осуществления изобретения отражатель работает в качестве модулирующего элемента под управлением приложенного напряжения. Край стоп-зоны подвергается настройке электрооптическими методами благодаря квантово-ограниченному эффекту Штарка вблизи резонансной моды, что создает модуляцию коэффициента пропускания отражателя и, таким образом, производит непрямую модуляцию интенсивности света. В другом варианте осуществления изобретения профиль оптического поля в резонаторе является функцией смещения длины волны стоп-зоны, и устройство работает в качестве излучателя света с настраиваемой длиной волны. В другом варианте осуществления изобретения в отражателе создаются две или более периодичности в ...

ЛАЗЕРНЫЙ ЭЛЕМЕНТ ПОВЕРХНОСТНОГО ИСПУСКАНИЯ, СПОСОБ ДЛЯ ИЗГОТОВЛЕНИЯ ЛАЗЕРНОГО ЭЛЕМЕНТА ПОВЕРХНОСТНОГО ИСПУСКАНИЯ И АТОМНЫЙ ОСЦИЛЛЯТОР

Лазерный элемент поверхностного испускания включает в себя полупроводниковую подложку и множество лазеров поверхностного испускания, сконфигурированных с возможностью испускания света со взаимно различными длинами волн. Каждый лазер поверхностного испускания включает в себя нижний брэгговский отражатель, обеспеченный на полупроводниковой подложке, резонатор, обеспеченный на нижнем брэгговском отражателе, верхний брэгговский отражатель, обеспеченный на резонаторе, и слой регулирования длины волны, обеспеченный внутри верхнего брэгговского отражателя или нижнего брэгговского отражателя. Слои регулирования длины волны, включенные в лазеры поверхностного испускания, имеют взаимно различные толщины, причем, по меньшей мере, один из слоев регулирования длины волны включает в себя слои регулирования, образованные из двух видов материалов, и числа слоев регулирования, включенных в слои регулирования длины волны, взаимно различаются. Технический результат заключается в возможности обеспечения регулирования ...

ЛАЗЕР ПОВЕРХНОСТНОГО ИЗЛУЧЕНИЯ С ВЕРТИКАЛЬНЫМ РЕЗОНАТОРОМ С ПЕРЕСТРОЙКОЙ ДЛИНЫ ВОЛНЫ И СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ

... 1. Полупроводниковый лазер поверхностного излучения с вертикальным резонатором с перестройкой длины волны, содержащий a) подложку; b) нижнее зеркало, сформированное над подложкой отражателем Брегга; c) активный элемент, который содержит i) слой генерирования света, излучающий свет при воздействии на него инжекционного тока при приложении прямого смещения, ii) первую легированную n-область растекания тока над подложкой и под слоем генерирования света, iii) первую легированную p-область растекания тока над слоем генерирования света, iv) токовые апертуры, расположенные между каждой соседней областью, и v) устройство управления активным элементом посредством напряжения смещения, прикладываемого между легированной n-областью растекания тока и легированной p-областью растекания тока с возможностью инжектирования тока в слой, генерирующий свет, для генерирования света; d) элемент регулировки фазы, который содержит i) слой модуляции, расположенный над первой легированной p–областью растекания тока ...

ПОЛУПРОВОДНИКОВЫЙ ЛАЗЕР НАКЛОННЫМ РЕЗОНАТОРОМ (ППЛНР), И СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ

... 1. Полупроводниковый лазер, содержащий: а) нижний отражатель, б) верхний отражатель; и в) резонатор, расположенный между нижним отражателем и верхним отражателем, содержащий активную область, расположенную в указанном резонаторе; при этом резонатор и активная область выполнены с возможностью того, чтобы световое излучение распространялось в резонаторе в направлении, наклоненном и относительно перпендикуляра к поперечной плоскости, и относительно самой поперечной плоскости. 2. Полупроводниковый лазер по п. 1, который дополнительно содержит подложку под нижним отражателем. 3. Полупроводниковый лазер по п. 2, в котором а) активная область излучает свет под воздействием на нее инжекционного тока при приложении прямого смещения; и б) резонатор также содержит: i) первую ограничивающую область под активной областью; ii) вторую ограничивающую область над активной областью; iii) первую имеющую донорную примесь область растекания тока над подложкой и под первой ограничивающей областью; iv) первую ...

OBERFLÄCHENEMITTIERENDE LASER MIT VERTIKALEM RESONATOR UND DARIN ENTHALTENEN STRUKTUREN

LICHTEMITTIERENDES ELEMENT UND VERFAHREN ZU SEINER HERSTELLUNG

Dieses lichtemittierende Element ist mit einer laminierten Struktur 20, die aus einem GaN-basierten Verbundhalbleiter gebildet ist, ausgestattet, wobei die laminierte Struktur darin laminiert Folgendes aufweist: eine erste Verbundhalbleiterschicht 21, die eine erste Oberfläche 21a und eine zweite Oberfläche 21b auf der Rückseite der ersten Oberfläche 21a enthält; eine aktive Schicht 23, die zu der zweiten Oberfläche 21b der ersten Verbundhalbleiterschicht 21 weist; und eine zweite Verbundhalbleiterschicht 22, die eine erste Oberfläche 22a, die zu der aktiven Schicht 23 weist, und eine zweite Oberfläche 22b auf der Rückseite der ersten Oberfläche 22a enthält. Das lichtemittierende Element ist außerdem mit Folgendem ausgestattet: einer ersten Lichtreflexionsschicht 41, die auf der Seite der ersten Oberfläche 21a der ersten Verbundhalbleiterschicht 21 vorgesehen ist; und einer zweiten Lichtreflexionsschicht 42, die auf der Seite der zweiten Oberfläche 22b der zweiten Verbundhalbleiterschicht ...

3D-Laserscanner

Es wird ein Modul zur Vermessung eines in einer Ortungszone positionierten Objekts vorgeschlagen, wobei das Modul zur Erzeugung eines Primärstrahls konfiguriert ist, wobei das Modul eine Scanspiegelstruktur aufweist, wobei die Scanspiegelstruktur derart steuerbar ist, dass von dem Primärstrahl eine Scanbewegung in der Ortungszone durchgeführt wird, wobei das Modul derart konfiguriert ist, dass ein Sekundärsignal detektierbar ist, wenn das Sekundärsignal durch Wechselwirkung des Primärstrahls mit dem Objekt in einer Ablenkstellung der Scanspiegelstruktur erzeugt wird, wobei das Modul zur Erzeugung einer Ortungsinformation in Abhängigkeit der Ablenkstellung der Scanspiegelstruktur konfiguriert ist, wobei das Modul ein Halbleiterlaserbauelement aufweist, wobei das Halbleiterlaserbauelement zur Erzeugung des Primärstrahls und zur Detektion des Sekundärsignals konfiguriert ist.

Optoelektronisches Bauelement in II-VI-Halbleitermaterial

The component has an active layer (4), barrier layers (3, 5) and optionally a buffer layer (2) at least one of which contains a beryllium-containing chalcogenide. The active layer comprises several strata, for example a super-lattice of BeTe/ZnSe or BeTe/ZnCdSe. Where an active ZnSe layer on a GaAs substrate (1) is used, matching of the III-V materials and II-VI materials is achieved with low electrical resistance by a pseudo-graduated buffer layer (2) by incorporation of a beryllium-containing chalcogenide.

A phonton source and method of operating a photon source

Vertical cavity surface emitting semiconductor lasers

The laser is formed by fusing together two substrates, one of which includes a multi-quantum well layer 16 and the other of which has channels 18 formed in its surface in order to enable the formation of an oxide layer with an aperture 22. The laser includes a GaAs/AlGaAs Bragg mirror stack 20 on a GaAs substrate 24 and a dielectric mirror 12.

PROCEDURE AND LASER DEVICE FOR THE OPTICAL TRANSMISSION OF NEWS

Current-controlled polarization switching vertical cavity surface emitting laser

Method of fabricating a distributed bragg reflector by controlling material composition using molecular beam epitaxy

Method of manufacturing a semiconductor surface emitting laser

Current leveling layer integrated with aperture for intracavity device

DISTRIBUTED FEEDBACK DIODE LASER

A laser having layers of a first material interleaved with layers of a second material with the first material having a different index of refraction and bandgap than those of the second material. The thicknesses of the layers of the first and second materials satisfy the relationship t = where m is the laser mode and n is the index of refraction of the material, such that the right and left going waves of the light produced by the layers of the first material when the laser is pumped are coupled and reinforced in a coherent manner by the layers of the second material such that reflections from the second material are in phase, thus allowing laser operation in the absence of discrete end mirrors.

ELECTRICALLY PUMPED VERTICAL CAVITY LASER

Disclosed is an electrically pumped vertical cavity laser structure operating in the mid-infrared region, which has demonstrated room-temperature continuous wave operation. This structure uses an interband cascade gain region, two distributed mirrors, and a low-loss refractive index waveguide. A preferred embodiment includes at least one wafer bonded GaAs-based mirror.

HIGH POWER LASER GRID STRUCTURE

Disclosed herein are various embodiments for laser apparatuses. In an example embodiment, the laser apparatus comprises (1) a laser-emitting epitaxial structure having a front and a back, wherein the laser-emitting epitaxial structure is back-emitting and comprises a plurality of laser regions within a single mesa structure, each laser region having an aperture through which laser beams are controllably emitted, (2) a micro-lens array located on the back of the laser-emitting epitaxial structure, wherein each micro-lens of the micro-lens array is aligned with a laser region of the laser-emitting epitaxial structure, and (3) a non-coherent beam combiner positioned to non-coherently combine a plurality of laser beams emitted from the apertures.

VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH INTRA-CAVITY STRUCTURES

... 2135182 9322813 PCTABS00028 Vertical-cavity surface-emitting lasers (VCSELs) are disclosed having various intra-cavity structures to achieve low series resistance, high power efficiencies, and TEM mode radiation. In one embodiment of the invention, a VCSEL comprises a laser cavity disposed between an upper mirror (70) and a lower mirror (20). The laser cavity comprises upper spacer (50) and lower spacer (30) layers sandwiching an active region (40). A stratified electrode (60) for conducting electrical current to the active region (40) is disposed between the upper mirror (70) and the upper spacer (50). The stratified electrode (60) comprises a plurality of alternating high and low doped layers (62, 63, 64) for achieving low series resistance without increasing the optical absorption. The VCSEL further comprises a current aperture as a disk shaped region formed in the stratified electrode for suppressing higher mode radiation. The current aperture is formed by reducing or eliminating the ...

OPTOELECTRONIC DEVICES UTILIZING MULTIPLE QUANTUM WELL PIN STRUCTURES AND A PROCESS FOR FABRICATING THE SAME

Optoelectronic devices such as photodetectors, modulators and lasers with improved optical properties are provided with an atomically smooth transition between the buried conductive layer and quantum-well-diode-containing intrinsic region of a p-i-n structure. The buried conductive layer is grown on an underlying substrate utilizing a surfactant-assisted growth technique. The dopant and dopant concentration are selected, as a function of the thickness of the conductive layer to be formed, so that a surface impurity concentration of from 0.1 to 1 monolayer of dopant atoms is provided. The presence of the impurities promotes atomic ordering at the interface between the conductive layer and the intrinsic region, and subsequently results in sharp barriers between the alternating layers comprising the quantum-well-diodes of the intrinsic layer.

CONDUCTIVE ELEMENT WITH LATERAL OXIDATION BARRIER

A conductive element with a lateral oxidation barrier is provided for t he control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation. The quality of material directly below the oxidation barrier may be preserved. Related applications include the formation of vertical cavity surface emitting lasers on non-GaAs substrates and on GaAs substrates.

VCSEL 구조

... 본 발명은 신규 격자 반사기에 기초한 VCSEL 구조에 관한 것이다. 격자 반사기는 격자 구조를 가진 인접한 코어 격자 영역을 가진 격자 층을 포함하며, 여기에서 격자 구조의 고-지수 섹션들의 굴절률은 적어도 2.5이며, 상기 격자 구조의 저-지수 섹션들의 굴절률은 2 미만이다. 상기 코어 격자 영역은 격자 층에 수직하는 방향으로 투사를 정의한다. 상기 격자 반사기는 격자 층에 인접한 캡 층을 추가로 포함하고, 캡 층으로의 코어 격자 영역의 투사 내에서 캡 층의 굴절률은 적어도 2.5이며, 코어 격자 영역의 투사 내에서, 상기 캡 층은 제 1 고체 유전체 저-지수 층에 의해 인접하게 되며, 상기 제 1 저-지수 층 또는 공기의 굴절률은 2 미만이며; 상기 코어 격자 영역의 투사 내에서, 상기 격자 층은 또한 제 2 저-지수 층에 의해 및/또는 공기에 의해 인접하게 되며, 상기 제 2 저-지수 층 또는 공기의 굴절률은 2 미만이다. VCSEL 구조는 뿐만 아니라 공동 및 증폭을 제공하기 위해 제 1 반사기 및 활성 영역을 포함한다.

VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAY

Disclosed is a method for controlling the emission wavelength of a vertical-cavity surface-emitting laser through the lateral mode size to achieve optical signal generation from two or more devices at two or more distinct wavelengths.

HYBRID VERTICAL CAVITY LASER WITH BURIED INTERFACE

A vertical cavity laser (Figure 3 )includes an optical cavity (116) adjacent to a first mirror (112), the optical cavity (116) having a semiconductor portion (130) and a dielectric spacer layer (160). A dielectric DBR (114) is deposited adjacent to the dielectric spacer layer (160). The interface (162) between the semiconductor portion (130) of the optical cavity (116)and the dielectric spacer layer (160) is advantageously located at or near a null (164) in the optical standing wave intensity pattern (166) of the vertical cavity laser ( Figure 3 ) to reduce the losses or scattering associated with that interface (162).

WAVELENTH-TUNABLE VERTICAL CAVITY SURFACE EMITTING LASER AND METHOD OF MAKING SAME

A wavelength tunable semiconductor vertical cavity surface emitting laser which includes at least one active element including an active layer generating an optical gain by injection of a current, and at least one phase control element, and mirrors. The phase control element contains a modulator exhibiting a strong narrow optical absorption peak on a short wavelength side from the wavelength of the laser generation. The wavelength control is realized by using a position-dependent electro-optical effect. If a reverse bias is applied, the absorption maximum is shifted to longer wavelengths due to the Stark effect. If a forward bias is applied, a current is injected and results in the bleaching and reduction of the peak absorption. In both cases a strong modulation of the refractive index in the phase control element occurs. The effect tunes the wavelength of the cavity mode, and the sign and the value of the wavelength shift are defined by the position of the modulator.

SEMICONDUCTOR LASER ARRAY DEVICE EMPLOYING MODULATION DOPED QUANTUM WELL STRUCTURES

An optoelectronic integrated circuit comprises a substrate, a multilayer structure formed on the substrate, and an array of thyristor devices and corresponding resonant cavities formed in the multilayer structure. The resonant cavities, which are adapted to process different wavelengths of light, are formed by selectively removing portions of said multilayer structure to provide said resonant cavities with different vertical dimensions that correspond to the different wavelengths. Preferably, that portion of the multilayer structure that is selectively removed to provide the multiple wavelengths includes a periodic substructure formed by repeating pairs of an undoped spacer layer and an undoped etch stop layer. The multilayer structure may be formed from group III-V materials. In this case, the undoped spacer layer and undoped etch stop layer of the periodic substructure preferably comprises undoped GaAs and undoped AlAs, respectively. The undoped AlAs functions as an etch stop during etching ...

A SEMICONDUCTOR LASER BASED ON THE EFFECT OF PHOTONIC BAND GAP CRYSTAL-MEDIATED FILTRATION OF HIGHER MODES OF LASER RADIATION AND METHOD OF MAKING SAME

A semiconductor laser having a low beam divergence is disclosed. The laser includes at least one waveguide comprising an active layer generating an optical gain by injection of a current, a photonic band gap crystal having the refractive index modulation in the direction perpendicular to the propagation of the emitted light, and at least one defect. The active layer is preferably placed within the defect. The photonic band gap crystal and the defect are optimized such that the fundamental mode of laser radiation is localized at the defect and decays away from the defect, while the other optical modes are extended over the photonic band gap crystal. Localization of the fundamental mode at the defect results in the relative enhancement of the amplitude of the mode with respect to the other modes. Therefore, there is a larger confinement factor of the fundamental mode as compared to the confinement factor of the other modes. This enables efficient single-mode lasing from the laser having an ...

CONTACT SCHEME FOR INTRACAVITY-CONTACTED VERTICAL-CAVITY SURFACE-EMITTING LASER

A vertical cavity surface emitting laser, or VCSEL, (10) includes a semiconductor device having a pair of mirror portions (18, 20), an active region (14), a tunnel junction (16), a pair of cladding layers (12a, 12b) and a substrate (32). Heat generated by the VCSEL (10) dissipates through the cladding layers (12a, 12b), which utilize an indium phosphide material. The VCSEL (10) also includes selective etches that are used to aperture the active region (14) to allow electric current to be injected into the active region (14).

Hybrid vertical cavity light emitting sources

Vertical cavity light emitting sources that utilize patterned membranes as reflectors are provided. The vertical cavity light emitting sources have a stacked structure that includes an active region disposed between an upper reflector and a lower reflector. The active region, upper reflector and lower reflector can be fabricated from single or multi-layered thin films of solid states materials (membranes) that can be separately processed and then stacked to form a vertical cavity light emitting source.

Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system

A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Electro-optical element and method for manufacturing thereof, optical module and method for driving thereof

An electro-optical element is provided including a light-emitting element part and a light-receiving element part, wherein an optical thickness d of the light-receiving element part satisfies the following condition: d=mλ/2 where λ is a design wavelength of the light-emitting element part, and m is a natural number greater than or equal to one.

Laser-emitting component having an injection zone of limited width

A vertical-cavity surface-emitting laser component operating at a wavelength lying in the range 1.3 mu m to 1.55 mu m, the component comprising a layer of active material having an injection zone of width that is smaller than the width of the component, said zone emitting radiation when an electrical current is injected therein, the component also comprising an amplifying medium for amplifying the radiation and two mirrors that are reflective at the emission wavelength and disposed respectively above and below the amplifying medium. The amplifying medium includes a circular barrier extending facing the active material, said barrier opposing the passage of current and defining a current-passing channel in its center facing the injection zone, said channel being of a width that is smaller than the width of the injection zone.

Surface-emitting type semiconductor laser and method for manufacturing the same

A surface-emitting type semiconductor laser includes: an upper mirror and a lower mirror each composed of alternately formed first semiconductor layers and second semiconductor layers; an active layer disposed between the upper mirror and the lower mirror, wherein the surface-emitting laser emits laser light in a direction in which the first semiconductor layers and the second semiconductor layers are formed; a thick film layer formed with one of the first semiconductor layers composing the lower mirror, the thick film layer being thicker than other of the first semiconductor layers; and a third semiconductor layer provided between the thick film layer and one of the second semiconductor layers on the thick film layer, the third semiconductor layer having a refractive index between a refractive index of the first conductive layer and a refractive index of the second semiconductor layer.

Tunable multi-frequency vertical cavity surface emitting laser

A tunable Vertical Cavity Surface Emitting Laser (VCSEL) is disclosed that produces N frequencies of visible light. The VCSEL comprises an array of quantum wells (QWMs) which replaces one of the normally present Distributive Bragg Reflectors (DBR) at one end of a laser cavity of the VCSEL. These N independent QWMs produce N independent frequency in the laser cavity of the VCSEL device.

Lateral injection vertical cavity surface-emitting laser

A lateral injection VCSEL comprises upper and lower mirrors forming a cavity resonator, an active region disposed in the resonator, high conductivity upper and lower contact layers located on opposite sides of the active region, upper and lower electrodes disposed on the upper and lower contact layers, respectively, and on laterally opposite sides of the upper mirror, and a current guide structure including an apertured high resistivity layer for constraining current to flow in a relatively narrow channel through the active region, characterized in that a portion of the lower contact layer that extends under the top electrode has relatively high resistivity. This feature of our invention serves two purposes. First, it suppresses current flow in parallel paths and, therefore, tends to make the current density distribution in the aperture more favorable for the fundamental mode. Second, it reduces parasitic capacitance.

Opto-electronic component made from II-VI semiconductor material

A component has an active layer, barrier layers and, if appropriate, a buffer layer and at least one of these layers contains a beryllium-containing chalcogenide. The active layer is a multiple layer, for example a superlattice made of BeTe/ZnSe or of BeTe/ZnCdSe. When using an active layer of ZnSe on a substrate of GaAs, matching with low electrical resistance is achieved between the III-V materials and the II-VI materials by means of a pseudo-graded buffer layer including a beryllium-containing chalcogenide.

Long wavelength vertical cavity surface emitting laser

Selectively oxidized vertical cavity lasers emitting at about 1290 nm using InGaAsN quantum wells that operate continuous wave below, at and above room temperature are reported. The lasers employ a semi-insulating GaAs substrate for reduced capacitance, high quality, low resistivity AlGaAs DBR mirror structures, and a strained active region based on InGaAsN. In addition, the design of the VCSEL reduces free carrier absorption of 1.3 mum light in the p-type materials by placing relatively higher p-type dopant concentrations near standing wave nulls.

GALLIUM NITRIDE CROSS-GAP LIGHT EMITTERS BASED ON UNIPOLAR-DOPED TUNNELING STRUCTURES

Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.

SURFACE EMITTING SEMICONDUCTOR LASER AND METHOD OF FABRICATING THE SAME

A lower mirror is formed on an n-type GaAs substrate. Next, an ion implanted region serving as a current confining region is formed through shallow ion implantation. Then, a SiO2 film mask is formed, and a multilayer structure including an active region and an upper mirror is selectively grown on an area not covered with the SiO2 film mask. In this manner, a surface emitting semiconductor laser with a low resistance and a low threshold current is obtained by using ion implantation and selective oxidation through a simplified fabrication process.

Semiconductor light emitting devices and methods

A method for producing an optical output, including the following steps: providing first and second electrical signals; providing a bipolar light-emitting transistor device that includes collector, base, and emitter regions; providing a collector electrode coupled with the collector region and an emitter electrode coupled with the emitter region, and coupling electrical potentials with respect to the collector and emitter electrodes; providing an optical coupling in optical communication with the base region; providing first and second base electrodes coupled with the base region; and coupling the first and second electrical signals with the first and second base electrodes, respectively, to produce an optical output emitted from the base region and coupled into the optical coupling, the optical output being a function of the first and second electrical signals.

LED DBR structure with reduced photodegradation

A distributed Bragg reflector (DBR) structure on a substrate includes a high refractive index layer comprising titanium oxide (TiO2) and a low refractive index layer having a high carbon region and at least one low carbon region that contacts the high refractive index layer. Multiple layers of the high refractive index layer and the low refractive index layer are stacked. Typically, the multiple layers of the high refractive index layer and the low refractive index layer are stacked to a thickness of less than 10 microns. Each of the respective layers of the high refractive index layer and the low refractive index layer have a thickness of less than 0.2 microns.

Devices with optical gain in silicon

A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion.

Rigid High Power and High Speed Lasing Grid Structures

Disclosed herein are various embodiments for stronger and more powerful high speed laser arrays. For example, an apparatus is disclosed that comprises an epitaxial material comprising a mesa structure in combination with an electrical waveguide, wherein the mesa structure comprises a plurality of laser regions within the mesa structure itself, each laser region of the mesa structure being electrically isolated within the mesa structure itself relative to the other laser regions of the mesa structure. 1. An apparatus comprising:an electrical waveguide;an epitaxial material comprising a mesa structure, wherein the mesa structure comprises a plurality of laser regions within the mesa structure itself, each laser region of the mesa structure being electrically isolated within the mesa structure itself relative to the other laser regions of the mesa structure;a substrate;a contact layer that extends beneath the mesa structure and is positioned above the substrate; anda structure separated from and around a periphery of the mesa structure, wherein the structure provides a contact that shorts the structure to the contact layer to provide a path for a current flow from the electrical waveguide to deliver energy to the laser regions;wherein the electrical waveguide is configured to provide the current flow to the laser regions and the structure via a plurality of electrical waveguide contacts, the electrical waveguide contacts comprising a first contact for electrical connection with the laser regions and a second contact for electrical connection with the structure contact; andwherein the contact layer is adapted to carry a current load from the electrical waveguide and spread current horizontally through the contact layer to the mesa structure including interior laser region portions of the mesa structure for injecting the laser regions with current to produce lasing from the laser regions.2. The apparatus of wherein the epitaxial material claim 1 , the structure claim 1 , ...

Bandgap isolated light emitter

WAVELENGTH CONTROLLED SURFACE EMITTING SEMICONDUCTOR LASER

PURPOSE: To provide a large variability of oscillating wavelength by forming at a side or both sides of an oscillator a bulk layer of lower refractive index, and a multiple quantum well DBR layer constituted of repetition of multiple quantum well layers of higher refractory index than that of the bulk layer. CONSTITUTION: A double heterodyne structure is constituted of an n type semiconductor layer 4, an active layer 5 and a p type semiconductor layer 8, and laser oscillating electrodes are formed at the lower part of an n type semiconductor substrate 2 and the upper part of a p type GaInAsP cntact layer 9 respectively. At a periphery of the active layer 5, a p type semiconductor blocking layer 6 and an n type semiconductor blocking layer 7 are formed and at the lower of the n type semiconductor layer 4, an etching stopping layer and a reflecting mirror 15 paired with the multiple quantum well DBR layer are formed. Applying electric voltage to the wavelength controlling electrodes 11 and ...

VCSEL С ВНУТРИРЕЗОНАТОРНЫМИ КОНТАКТАМИ

Использование: для создания лазерного устройства с высокой эффективностью преобразования мощности. Сущность изобретения заключается в том, что лазерное устройство образовано по меньшей мере одним поверхностно-излучающим лазером с вертикальным резонатором с внутрирезонаторными контактами, причем упомянутый поверхностно-излучающий лазер с вертикальным резонатором содержит эпитаксиальную слоистую структуру с активной областью между первым распределенным брэгговским отражателем и вторым распределенным брэгговским отражателем, первым слоем токовой инжекции первого типа проводимости между первым распределенным брэгговским отражателем и активной областью и вторым слоем токовой инжекции второго типа проводимости между вторым распределенным брэгговским отражателем и активной областью, и при этом дополнительно содержит токовую апертуру, причем упомянутые первый и второй слои токовой инжекции находятся в контакте с первым и вторым металлическими контактами соответственно, в котором упомянутые первый ...

BANDLÜCKENISOLIERTE LICHTEMITTIERENDE VORRICHTUNG

Oberflächenemittierender Laser

Herstellungsverfahren für einen Oberflächenemittierenden Laser

OBERFLÄCHENEMITTIERENDER HALBLEITERLASERCHIP

Oberflächenemittierender Halbleiterlaserchip (1) mit einem Träger (20), einem auf dem Träger (20) angeordneten Schichtenstapel (10) mit einer senkrecht zur Stapelrichtung (R) verlaufenden Schichtenebene (L), einem Vorderseitenkontakt (310) und einem Rückseitenkontakt (320), bei demim Betrieb vermittels Stromeinschnürung im Schichtenstapel (10) eine vorgegebene Verteilung einer Stromdichte (I) erzielt wird, wobeiim Träger (20) eine elektrische Durchkontaktierung (200) vorgesehen ist, welche sich von einer von dem Schichtenstapel (10) abgewandten Bodenfläche (20a) des Trägers (20) bis zu einer dem Schichtenstapel (10) zugewandten Fläche des Trägers (20) erstreckt, unddie Verteilung der Stromdichte (I) durch Form und Größe des Querschnitts der Durchkontaktierung (200) parallel zur Schichtenebene (L) an der dem Schichtenstapel zugewandten Fläche maßgeblich beeinflusst ist.

Herstellungsverfahren einer optoelektrischen Halbleitervorrichtung, und Vorrichtung oder Matrix von Vorrichtungen hergestellt unter Verwendung dieses Verfahrens

Oberflächenemittierender Halbleiterlaser mit Lichtempfänger, Herstellungsverfahren, und Sensor unter Verwendung desselben

Steuerbarer Bragg-Reflektor

Es wird ein steuerbarer Bragg-Reflektor vorgeschlagen, welcher geeignet ist, einfallendes Licht zu reflektieren. Dieser umfasst mindestens eine Schicht eines Übergitters, wobei das Übergitter mindestens eine Schicht aus einem ersten Gruppe-3-Nitrid und mindestens eine zweite Schicht aus einem zweiten Gruppe-3-Nitrid umfasst. Ferner umfasst der Bragg-Reflektor mindestens eine Schicht bestehend aus einem Halbleitermaterial. Zudem werden mindestens zwei Elektroden umfasst, wobei mindestens eine Elektrode transparent für das einfallende Licht ist oder eine geeignete Struktur aufweist, die zumindest teilweisen Lichteinfall in die Halbleiter- und Übergitterschichten gewährleistet und wobei zwischen besagten Elektroden eine Spannung (U) anlegbar ist.

Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers

Verfahren zur Herstellung einer oberflächenemittierenden Halbleitervorrichtung

Optoelectronic device

Resonant cavity laser having oxide spacer region

A resonant-cavity optical device, eg a vertical cavity surface emitting laser, has a substrate upon which are provided a Bragg reflector multilayer bottom mirror, a semiconductor lower spacer region, an active region, and a dielectric region which surrounds the bottom mirror, the active region and the lower spacer region. An upper spacer region and a top mirror are provided on top of the active region. The top mirror has a window in which a metal terminal is provided. The terminal is in direct contact with the upper spacer region which is formed of a transparent electrically conducting oxide, eg indium tin oxide.

Resonant-cavity optical device

SEMICONDUCTOR LASER DEVICE

Integration of transistors with vertical cavity surface emitting lasers

LASERS OR LEDS BASED ON NANOWIRES GROWN ON GRAPHENE TYPE SUBSTRATES

A device, such as a light-emitting device, e.g. a laser device, comprising: a plurality of group III-V semiconductor NWs grown on one side of a graphitic substrate, preferably through the holes of an optional hole-patterned mask on said graphitic substrate; a first distributed Bragg reflector or metal mirror positioned substantially parallel to said graphitic substrate and positioned on the opposite side of said graphitic substrate to said NWs; optionally a second distributed Bragg reflector or metal mirror in contact with the top of at least a portion of said NWs; and wherein said NWs comprise ann-type doped region and a p-type doped region and optionally an intrinsic region there between.

VERTICAL CAVITY SURFACE EMITTING LASER HAVING MULTIPLE TOP-SIDE CONTACTS

OCT SYSTEM WITH BONDED MEMS TUNABLE MIRROR VCSEL SWEPT SOURCE

A microelectromechanical systems (MEMS)-tunable vertical-cavity surfaceemitting laser (VCSEL) in which the MEMS mirror is a bonded to the active region. This allows for a separate electrostatic cavity, that is outside the laser's optical resonant cavity. Moreover, the use of this cavity configuration allows the MEMS mirror to be tuned by pulling the mirror away from the active region. This reduces the risk of snap down. Moreover, since the MEMS mirror is now bonded to the active region, much wider latitude is available in the technologies that are used to fabricate the MEMS mirror. This is preferably deployed as a swept source in an optical coherence tomography (OCT) system.

VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAY DISPLAY SYSTEM

... 2133977 9321673 PCTABS00027 A visual display system is disclosed which utilizes one- and/or two-dimensional arrays of visible emitting vertical-cavity surface-emitting lasers (VCSELs) (200) in order to provide a desired visual display within an observer's field of view (220). Sweep and subscanning techniques are employed, individually or in combination, to create a full M x N image from 1 x L or K x L arrays of VCSELs, where M and N are multiple integers of K and L, respectively. Preferably, the VCSELs (200) are contained within a display housing which may be attached to the head of the user by an attachment mechanism or may alternatively be hand held or mounted to a surface. The circular symmetry and low divergence of the emitted VCSEL radiation as well as the availability of multiple wavelengths, particularly, red, blue, and green, allow high resolution monochrome or color images to be generated.

CURRENT CONFINEMENT FOR A VERTICAL CAVITY SURFACE EMITTING LASER

A vertical cavity surface emitting laser having a planar structure, having an implantation or diffusion at the top of the mirror closest to the substrate or at the bottom of the mirror farthest from the substrate, to provide current confinement with the gain region, and having an active region and another minor formed subsequent to the implantation or diffusion. This structure has an implantation or diffusion that does not damage or detrimentally affect the gain region, and does provide dimensions of current confinement that are accurately ascertained. Alternatively, the implantation or diffusion for current confinement ma y be placed within the top mirror, and several layers above the active region, still with minimal damage to the gain region and having a well-ascertained current confinement dimension.

PROCESS AND DEVICES Of EMISSION OR LASER RECEPTION FOR the TRANSMISSION Of INFORMATION PER OPTICAL WAY

The surface emitting laser device.

MANUFACTORING PROCESS Of a LASER EMISSION BY SURFACE HAS

Laser device with emission of surface

Ce laser intégré à émission par la surface comprend un substrat (3) et une cavité optique (5) perpendiculaire au substrat (3) présentant au moins une face latérale perpendiculaire au substrat et au moins une face parallèle au substrat d'émission de lumière, caractérisé en ce que la cavité (5) est du type à rétroaction distribuée.

Optoelectronic laser transmitter and pin diode receiver - has active layer with adjacent diffraction grating which allows transmission at one wavelength and reception at another

SEMICONDUCTOR LASER HAS EMISSION BY SURFACE

Afin d'augmenter son rendement et de diminuer l'échauffement, le laser comporte entre une couche active (CA) enterrée et un miroir (MH) une couche de blocage de courant (B) munie d'une ouverture centrée sur la couche active (CA) et de dimensions inférieures à celle-ci. Application notamment aux systèmes de télécommunication optiques.

SURFACE-EMITTING LASER ELEMENT, FABRICATION METHOD THEREOF, SURFACE-EMITTING LASER ARRAY, AND FABRICATION METHOD THEREOF

Surface-Emitting Laser Element, Fabrication Method Thereof, Surface-EmittingLaser Array, and Fabrication Method ThereofA fabrication method of a surface-emitting laser element (1) includes a step of preparing a conductive GaN multiple-region substrate including a high dislocation density high conductance region (10a), a low dislocation density high conductance region (10b) and a low dislocation density low conductance region (10c), as a conductive GaN substrate (10); a semiconductor layer stack formation step of forming a plurality of group III-V compound semiconductor layer stack (20) including an emission layer (200) on the substrate; and an electrode formation step of forming a semiconductor side electrode (15) and a substrate side electrode (11). The semiconductor layer and electrodes are formed such that an emission region (200a) into which carriers flow in the emission layer (200) is located above and within the span of the low dislocation density high conductance region (10b). Thus ...

ELECTRICALLY-PUMPED (GA,IN, AI) N VERTICAL-CAVITY SURFACE-EMITTING LASER

A vertical-cavity surface-emitting laser (VCSEL) comprising a low-loss thin metal contact and current spreading layer within the optical cavity that provides for improved ohmic contact and lateral current distribution, a substrate including a plano concave optical cavity, a (Ga,In,A1)N multiple quantum well (MQW) active region contained within the optical cavity that generates light when injected by an electrical current, and an integrated micromirror fabricated onto the substrate that provides for optical mode control of the light generated by the active region. A relatively simple process is used to fabricate the VCSEL.

SURFACE EMITTING LASER AND OPTICAL COHERENCE TOMOGRAPHY APPARATUS

A surface emitting laser is provided which requires a smaller number of components, and which can reduce the cost. A surface emitting laser includes a cavity constituted by a first reflecting mirror (101) and a second reflecting mirror (102), and having a resonant wavelength that is changed by changing a cavity length with movement (106) of the first reflecting mirror (101) in a direction facing the second reflecting mirror. The surface emitting laser further includes an active layer (105) arranged in the cavity and emitting light, a third reflecting mirror (103) arranged on the opposite side of the active layer (105) with respect to the second reflecting mirror (102), and a light receiving element (104) arranged to receive light passing through the third reflecting mirror. The wavelength sweeping VCSEL may comprise a first DBR (101) on a deformable support (303) which is in turn supported by a further support (302). The active layer (105) may be a MQW on a second DBR (102) on a substrate ...

VCSEL WITH INTRACAVITY CONTACTS

The present invention relates to a laser device being formed of at least one VCSEL (15) with intracavity contacts. The VCSEL comprises a layer structure (18) with an active region (6) between a first DBR (4) and a second DBR (10), a first current-injection layer (5) of a first conductivity type between the first DBR (4) and the active region (6), and a second current-injection layer (8) of a second conductivity type between the second DBR (10) and the active region (6). The first and second current-injection layers (5, 8) are in contact with a first and a second metallic contact (11, 12), respectively. The first and/or second DBR (4, 10) are formed of alternating Aluminum oxide and Al(x)Ga(1-x)As containing layers. The proposed design of this VCSEL allows an increased efficiency and lower production costs of such a laser since the top and bottom DBRs may be formed of a considerable reduced thickness.

DEVICES WITH OPTICAL GAIN IN SILICON

A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that from a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion.

SEMICONDUCTOR COMPONENTS WITH STEEP PHOSPHORUS PROFILE IN A GERMANIUM LAYER

The invention relates to a semiconductor component and to a method for limiting a dopant diffusion, in particular a phosphorus diffusion in germanium. According to the invention, an Si spike is used for this purpose.

Vertical-cavity surface emitting laser assay display system

A visual display system is disclosed which utilizes one- and/or two-dimensional arrays of visible emitting vertical-cavity surface-emitting lasers (VCSELs) in order to provide a desired visual display within an observer's field of view. Sweep and subscanning techniques are employed, individually or in combination, to create a full M×N image from 1×L or K×L arrays of VCSELs, where M and N are multiple integers of K and L, respectively. Preferably, the VCSELs are contained within a display housing which may be attached to the head of the user by an attachment mechanism or may alternatively be hand held or mounted to a surface. The circular symmetry and low divergence of the emitted VCSEL radiation as well as the availability of multiple wavelengths, particularly, red, blue and green, allow high resolution monochrome or color images to be generated.

Vertical cavity surface emitting laser diode operable in 1.3 μm or 1.5 μm wavelength band with improved efficiency

A vertical cavity surface emitting laser diode includes an active layer of a group III-V compound semiconductor device containing N and As as the group V elements. The active layer has exposed lateral edges wherein the N atoms are substituted by the As atoms at the exposed lateral edges by an annealing process conducted in a AsH3 atmosphere.

III-V Photonic Integration on Silicon

Photonic integrated circuits on silicon are disclosed. By bonding a wafer of HI-V material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. The coupling between the silicon waveguide and the III-V gain region allows for integration of low threshold lasers, tunable lasers, and other photonic integrated circuits with Complimentary Metal Oxide Semiconductor (CMOS) integrated circuits.

Nitride semiconductor vertical cavity surface emitting laser

In one aspect, a VCSEL includes a base region that has a vertical growth part laterally adjacent a first optical reflector and a lateral growth part that includes nitride semiconductor material vertically over at least a portion of the first optical reflector. An active region has at least one nitride semiconductor quantum well vertically over at least a portion of the lateral growth part of the base region and includes a first dopant of a first electrical conductivity type. A contact region includes a nitride semiconductor material laterally adjacent the active region and a second dopant of a second electrical conductivity type opposite the first electrical conductivity type. A second optical reflector is vertically over the active region and forms with the first optical reflector a vertical optical cavity overlapping at least a portion of the at least one quantum well of the active region. A method of fabricating a VCSEL also is described.

III-nitride light emitting devices fabricated by substrate removal

Devices and techniques for fabricating InAlGaN light-emitting devices are described that result from the removal of light-emitting layers from the sapphire growth substrate. In several embodiments, techniques for fabricating a vertical InAlGaN light-emitting diode structure that result in improved performance and or cost-effectiveness are described. Furthermore, metal bonding, substrate liftoff, and a novel RIE device separation technique are employed to efficiently produce vertical GaN LEDs on a substrate chosen for its thermal conductivity and ease of fabrication.

Light emitting devices with layered III -V semiconductor structures, and modules and systems for computer, network and optical communication, using such devices

A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and light emissions, wherein the amount of lattice strains in the quantum well layer is in excess of 2% against either the semiconductor substrate or cladding layer and, alternately, the thickness of the quantum well layer is in excess of the critical thickness calculated after Matthews and Blakeslee.

OPTICALLY MATCHED VERTICAL-CAVITY SURFACE-EMITTING LASER (VCSEL) WITH PASSIVATION

A vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a mesa structure disposed on a substrate. The mesa structure has a first reflector, a second reflector, and an active cavity material structure disposed between the first and second reflectors. The mesa structure defines an optical window through which the VCSEL is configured to emit light. The mesa structure further includes a passivation layer disposed at least within the optical window. The passivation layer is designed to seal the mesa structure to reduce the humidity sensitivity of the VCSEL and to protect the VCSEL from contaminants. The passivation layer also provides an improvement in overshoot control, broader modulation bandwidth, and faster pulsing of the VCSEL such that the VCSEL may provide a high speed, high bandwidth signal with controlled overshoot and dumping behavior.

Apparatus for and method of frequency conversion

Apparatus for frequency conversion of light, the apparatus comprises: a light-emitting device for emitting a light having a first frequency, the light-emitting device being an edge-emitting semiconductor light-emitting diode having an extended waveguide selected such that a fundamental transverse mode of the extended waveguide is characterized by a low beam divergence. The apparatus further comprises a light-reflector, constructed and designed so that the light passes a plurality of times through an external cavity, defined between the light-emitting device and the light-reflector, and provides a feedback for generating a laser light having the first frequency. The apparatus further comprises a non-linear optical crystal positioned in the external cavity and selected so that when the laser light having the first frequency passes a plurality of times through the non-linear optical crystal, the first frequency is converted to a second frequency being different from the first frequency.

Miniature self-pumped monolithically integrated solid state laser

The present invention is an integrated, diode laser-pumped, solid state laser which can be fabricated entirely with semiconductor fabrication techniques. The laser includes a substrate, a semiconductor light source grown over the substrate to provide pump light and a solid state laser grown over the substrate. The semiconductor light source produces pump light at a wavelength useful for pumping the solid state laser. The solid state laser includes a pump mirror transparent to the pump light, an output mirror, and a doped semiconductor layer deposited between the pump and output mirrors, the semiconductor, dielectric or polymer layer being doped with active metal ions. The pump light from the semiconductor light source is closely coupled to the solid state laser and passes through the pump mirror to pump the active metal ions.

Semiconductor laser based on the effect of photonic band gap crystal-mediated filtration of higher modes of laser radiation and method of making same

A semiconductor laser having a low beam divergence is disclosed. The laser includes at least one waveguide comprising an active layer generating an optical gain by injection of a current, a photonic band gap crystal having the refractive index modulation in the direction perpendicular to the propagation of the emitted light, and at least one defect. The active layer is preferably placed within the defect. The photonic band gap crystal and the defect are optimized such that the fundamental mode of laser radiation is localized at the defect and decays away from the defect, while the other optical modes are extended over the photonic band gap crystal. Localization of the fundamental mode at the defect results in the relative enhancement of the amplitude of the mode with respect to the other modes. Therefore, there is a larger confinement factor of the fundamental mode as compared to the confinement factor of the other modes. This enables efficient single-mode lasing from the laser having an ...

METHOD OF MANUFACTURE OF ADVANCED HETEROJUNCTION TRANSISTOR AND TRANSISTOR LASER

Methods of manufacture of advanced heterojunction transistors and transistor lasers, and their related structures, are described herein. Other embodiments are also disclosed herein.

Conductive element with lateral oxidation barrier

A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation. The quality of material directly below the oxidation barrier may be preserved. Related applications include the formation of vertical cavity surface emitting lasers on non-GaAs substrates and on GaAs substrates.

Surface-emitting type semiconductor laser and method for manufacturing the same

A reliable surface-emitting type semiconductor laser and a method for manufacturing the same, is capable of controlling polarization planes of laser light without lowering the energy usage efficiency. The surface-emitting type semiconductor laser has a first mirror, an active layer and a second mirror formed above a substrate, a first columnar section formed adjacent to the active layer and including a dielectric layer defining an opening section and a second columnar section formed above the first columnar section. A planar configuration of the second columnar section has anisotropy.

Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation

A semiconductor device includes a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum well structure, an n-type modulation doped quantum well structure, and a fourth plurality of layers including a p-type ohmic contact layer. Etch stop layers are used to form contacts to the n-type ohmic contact layer and contacts to the n-type modulation doped quantum well structure. Thin capping layers are also provided to protect certain layers from oxidation. Preferably, each such etch stop layer is made sufficiently thin to permit current tunneling therethrough during operation of optoelectronic/electronic devices realized from this structure (including heterojunction thyristor devices, n-channel HFET devices, p-channel HFET devices, p-type quantum-well-base bipolar transistor devices, and n-type quantum-well-base bipolar transistor devices). In another aspect of the present invention, a ...

Optoelectronic semiconductor device

Optoelectronic devices, such as optical transmitters and optical amplifiers, are provided. The optoelectronic devices are suitable for use in connection with optical communications systems, and related components and devices, such as may be used in the transmission, reception and processing of data and other information. The optoelectronic devices are implemented as various types of semiconductors. The form, structure, properties and functionality of a particular optoelectronic semiconductor device are determined with reference to the application(s) in connection with which the optoelectronic device is to be employed.

A SEMICONDUCTOR LASER BASED ON THE EFFECT OF PHOTONIC BAND GAP CRYSTAL-MEDIATED FILTRATION OF HIGHER MODES OF LASER RADIATION AND METHOD OF MAKING SAME

A semiconductor laser (100) having a low beam divergence is disclosed. The laser includes at least one waveguide comprising an active layer (108) generating an optical gain by injection of a current, a photonic band gap crystal (120) having the refractive index modulation in the direction perpendicular to the propagation of the emitted light, and at least one defect (121). The active layer (108) is preferably placed within the defect (121). The photonic band gap crystal (120) and the defect are optimized such that the fundamental mode of laser radiation is localized at the defect (121) and decays away from the defect (121), while the other optical modes are extended over the photonic band gap crystal. Localization of the fundamental mode at the defect (121) results in the relative enhancement of the amplitude of the mode with respect to the other modes. Therefore, there is a larger confinement factor of the fundamental mode as compared to the confinement factor of the other modes. This ...

Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication

Optoelectronic devices utilizing multiple quantum well pin structures and a process for fabricating the same

Optoelectronic devices such as photodetectors, modulators and lasers with improved optical properties are provided with an atomically smooth transition between the buried conductive layer and quantum-well-diode-containing intrinsic region of a p-i-n structure. The buried conductive layer is grown on an underlying substrate utilizing a surfactant-assisted growth technique. The dopant and dopant concentration are selected, as a function of the thickness of the conductive layer to be formed, so that a surface impurity concentration of from 0.1 to 1 monolayer of dopant atoms is provided. The presence of the impurities promotes atomic ordering at the interface between the conductive layer and the intrinsic region, and subsequently results in sharp barriers between the alternating layers comprising the quantum-well-diodes of the intrinsic layer. ...

OPTO-ELECTRONIC DEVICE USING DISABLED TUNNEL JUNCTION FOR CURRENT CONFINEMENT

PROBLEM TO BE SOLVED: To provide an opto-electronic device of a high performance having an etched mechanism at a low cost. SOLUTION: The opto-electronic device comprises an active region 120, a semiconductor region 140, a tunnel junction between the active region 120 and the semiconductor region 140, and a current blocking region 135 between the active region 120 and the semiconductor region 140. The current blocking region 135 operates as an inversely biased PN junction and confines a current between the active region 120 and the semiconductor region 140 to a region via a limited area of the tunnel junction. A method of manufacturing the opto- electronic device is also provided. COPYRIGHT: (C)2003,JPO ...

LIGHT EMITTING DIODE

PURPOSE: To provide a novel light emitting semiconductor device and a product comprising such a device. CONSTITUTION: A device utilizing the real space transfer comprises a confronting effective conductive region separated by a barrier layer 32. Within the first region 31 (called 'emitter') containing at least two contacts 370, 371, when a proper bias is applied between the two contacts as well as between the emitter and the second region 36, hot carrier is implanted in the second region 36 to emit light in the second region 36. This invention can be applied to coherent light source similar to incoherent light source. A preferable embodiment is vertical cavity face light emitting laser. This device can be actuated as a new logic element having electric input and optical output thereby enabling normally hard to get logic function to be discharged. COPYRIGHT: (C)1992,JPO ...

ОПТОЭЛЕКТРОННОЕ УСТРОЙСТВО ДЛЯ ВЫСОКОСКОРОСТНОЙ ПЕРЕДАЧИ ДАННЫХ

... 1. Полупроводниковое оптоэлектронное устройство содержащее: ! a) по меньшей мере одну область резонатора, ! b) по меньшей мере один многослойный интерференционный отражатель, ! c) по меньшей мере одну область модуляции, которая электрооптически настраивает длину волны края стоп-зоны многослойного интерференционного отражателя по отношению к резонансной длине волны первого резонатора, ! d) по меньшей мере один светогенерирующий элемент, содержащий область усиления, который генерирует свет при приложении к области усиления прямого смещения, и ! e) по меньшей мере три электрических контакта, которые независимо подают смещение к области модуляции и к светогенерирующему элементу, ! при этом настройка происходит через варьирование оптического пропускания многослойного интерференционного отражателя. ! 2. Полупроводниковое оптоэлектронное устройство по п.1, в котором область модуляции настраивает длину волны края стоп-зоны многослойного интерференционного отражателя относительно по меньшей мере ...

Surface emitting laser, light source, and optical module

A surface emitting laser includes lower and upper multilayer mirrors, first-conductivity-type and second-conductivity-type contact layers formed between the lower and the upper multilayer mirrors, an active layer formed between the first-conductivity-type and the second-conductivity-type contact layers, a current confinement layer formed between the second-conductivity-type contact layer and the active layer, and first and second composition gradient layers formed facing each other across the current confinement layer. The first composition gradient layer and the second composition gradient layer are formed such that bandgap energy of each of the layers is monotonically decreased from the current confinement layer to an adjacent layer and approach bandgap energy of the adjacent layer in a growth direction.

Three-terminal vertical cavity surface emitting laser (vcsel) and a method for operating a three-terminal vcsel

A three-terminal VCSEL is provided that has a reduced fall time that allows the VCSEL to be operated at higher speeds. Methods of operating the three-terminal VCSEL are also provided. The VCSEL can be operated at higher speeds without decreasing the optical output of the VCSEL when its in the logical HIGH state.

Hybrid laser light sources for photonic integrated circuits

A light source for a photonic integrated circuit may comprise a reflection coupling layer formed on a substrate in which an optical waveguide is provided, at least one side of the reflection coupling layer being optically connected to the optical waveguide; an optical mode alignment layer provided on the reflection coupling layer; and/or an upper structure provided on the optical mode alignment layer and including an active layer for generating light and a reflection layer provided on the active layer. A light source for a photonic integrated circuit may comprise a lower reflection layer; an optical waveguide optically connected to the lower reflection layer; an optical mode alignment layer on the lower reflection layer; an active layer on the optical mode alignment layer; and/or an upper reflection layer on the active layer.

Method for the reuse of gallium nitride epitaxial substrates

A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.

Surface emitting semiconductor laser, surface emitting semiconductor laser device, light transmission apparatus, and information processing apparatus

A surface emitting semiconductor laser includes a substrate, a first semiconductor multi-layer reflector formed on the substrate and including a pair of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index which are laminated, a semi-insulating i type AlGaAs layer formed on the first semiconductor multi-layer reflector, an n type semiconductor layer formed on the AlGaAs layer, an active region formed on the semiconductor layer, a p type second semiconductor multi-layer reflector formed on the active region and including a pair of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index which are laminated, an n side first electrode electrically connected to the semiconductor layer, and a p side second electrode electrically connected to the second semiconductor multi-layer reflector.

VERTICAL CAVITY SURFACE EMITTING LASER ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER ARRAY ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, LIGHT SOURCE DEVICE, AND OPTICAL MODULE

Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of AlGaAs (0.8≦x≦1) and a high-refractive-index layer formed of AlGaAs (0≦y≦x), at least one of the low-refractive-index layer and the high-refractive-index layer being of n-type; and a lower electrode provided between the lower multilayer film reflecting mirror and the active layer and configured to inject an electric current into the active layer. 1. (canceled)3. The surface emitting laser element according to claim 2 , wherein the low-refractive-index layer of the lower multilayer film reflecting mirror includes AlGaAs claim 2 , where 0.855 Подробнее

Lateral electrochemical etching of iii-nitride materials for microfabrication

Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

Hybrid vertical cavity laser for photonic integrated circuit

According to example embodiments, a hybrid vertical cavity laser for a photonic integrated circuit (PIC) includes: a grating mirror between first and second low refractive index layers, an optical waveguide optically coupled to one side of the grating mirror, a III-V semiconductor layer including an active layer on an upper one of the first and second low refractive index layers, and a top mirror on the III-V semiconductor layer. The grating mirror includes a plurality of bar-shaped low refractive index material portions arranged parallel to each other. The low refractive index material portions include a plurality of first portions having a first width and a plurality of second portions having second width in a width direction. The first and second widths are different.

LIGHT EMITTING ELEMENT

A light emitting element includes a laminated structure formed by laminating a first light reflecting layer , a light emitting structure , and a second light reflecting layer . The light emitting structure is formed by laminating, from the first light reflecting layer side, a first compound semiconductor layer , an active layer , and a second compound semiconductor layer . In the laminated structure , at least two light absorbing material layers are formed in parallel to a virtual plane occupied by the active layer 1. A light emitting element comprising a laminated structure formed by laminating:a first light reflecting layer;a light emitting structure; anda second light reflecting layer, whereinthe light emitting structure is formed by laminating:from the first light reflecting layer side,a first compound semiconductor layer;an active layer; anda second compound semiconductor layer, andin the laminated structure, at least two light absorbing material layers are formed in parallel to a virtual plane occupied by the active layer.2. The light emitting element according to claim 1 , wherein at least four light absorbing material layers are formed.3. The light emitting element according to claim 1 , wherein{'sub': eq', '0, 'claim-text': {'br': None, 'i': m·λ', 'n', 'L', 'm·λ', 'n, 'sub': 0', 'eq', '0', '0', 'eq, '0.9×{()/(2·)}≤≤1.1×{()/(2·)}'}, 'when an oscillation wavelength is represented by Ao, an equivalent refractive index of a whole of the two light absorbing material layers and a portion of the laminated structure located between the light absorbing material layers is represented by n, and a distance between the light absorbing material layers is represented by L,'}is satisfied.Provided that m is 1 or any integer of 2 or more including 1.4. The light emitting element according to claim 1 , wherein the light absorbing material layers have a thickness of λ0/(4·n) or less.5. The light emitting element according to claim 1 , wherein the light absorbing material ...

Micro Laser Diode Display Device and Electronics Apparatus

A micro laser diode display device and an electronics apparatus are disclosed. The micro laser diode display device comprises: a substrate ()/receiving substrate (). wherein first type electrodes () are arranged on the substrate ()/receiving substrate (); a micro laser diode () array of at least one color bonded on the substrate ()/receiving substrate (), wherein a first side of micro laser diodes () in the micro laser diode array is connected to the first type electrodes (); and second type electrodes () connected to a second side of the micro laser diodes (). 1. A micro laser diode display device , comprising:a substrate, wherein one or more first type electrodes are arranged on the substrate;a micro laser diode array comprising a plurality of micro laser diodes of at least one color bonded on the substrate, wherein a first side of the micro laser diodes in the micro laser diode array is connected to the first type electrodes; andone or more second type electrodes connected to a second side of the micro laser diodes.2. The micro laser diode display device according to claim 1 , wherein the micro laser diodes comprise a vertical cavity surface emitting laser structure claim 1 , which includes a lower contact layer claim 1 , a lower Bragg reflector layer claim 1 , a lower spacer layer claim 1 , an active layer claim 1 , an upper spacer layer claim 1 , an upper Bragg reflector layer and an upper contact layer.3. The micro laser diode display device according to claim 1 , further comprising a dielectric filler layer is filled among the micro laser diodes.4. The micro laser diode display device according to claim 1 , wherein at least one part of the second type electrodes is formed at a lateral side of the micro laser diodes.5. The micro laser diode display device according to claim 3 , wherein the second type electrodes are formed on top of the micro laser diodes and the dielectric filler layer claim 3 , and are patterned so that the micro laser diodes are exposed.6. ...

SURFACE EMITTING LASER, SURFACE EMITTING LASER ELEMENT AND ATOMIC OSCILLATOR

A surface emitting laser for emitting light with a wavelength λ includes a first reflection mirror provided on a semiconductor substrate; a resonator region including an active layer provided on the first reflection mirror; a second reflection mirror, including plural low refraction index layers and plural high refraction index layers, provided on the resonator region; a contact layer provided on the second reflection mirror; a third reflection mirror provided on the contact layer; and an electric current narrowing layer provided between the active layer and the second reflection mirror or in the second reflection mirror. Optical lengths of at least one of thicknesses of the low refraction index layers and the high refraction index layers formed between the electric current narrowing layer and the contact layer are (2N+1)×λ/4 (N=1, 2, . . . ). 1. A surface emitting laser for emitting light with a wavelength λ , comprising:a first reflection mirror provided on a semiconductor substrate;a resonator region including an active layer provided on the first reflection mirror;a second reflection mirror, including a plurality of low refraction index layers and a plurality of high refraction index layers, provided on the resonator region;a contact layer provided on the second reflection mirror;a third reflection mirror provided on the contact layer; andan electric current narrowing layer provided between the active layer and the second reflection mirror or in the second reflection mirror, wherein optical lengths of at least one of thicknesses of the low refraction index layers and the high refraction index layers formed between the electric current narrowing layer and the contact layer are (2N+1)×λ/4 (N=1, 2, . . . ).2. The surface emitting laser as claimed in claim 1 , wherein the optical lengths of the thicknesses of at least one of the low refraction index layers formed between the electric current narrowing layer and the contact layer are (2N+1)×λ/4 (N=1 claim 1 , 2 claim ...

OCT System with Bonded MEMS Tunable Mirror VCSEL Swept Source

A microelectromechanical systems (MEMS)-tunable vertical-cavity surface-emitting laser (VCSEL) in which the MEMS mirror is bonded to the active region. This allows for a separate electrostatic cavity that is outside the laser's optical resonant cavity. Moreover, the use of this cavity configuration allows the MEMS mirror to be tuned by pulling the mirror away from the active region. This reduces the risk of snap down. Moreover, since the MEMS mirror is now bonded to the active region, much wider latitude is available in the technologies that are used to fabricate the MEMS mirror. This is preferably deployed as a swept source in an optical coherence tomography (OCT) system. 1. An optical coherence analysis system , comprising:an interferometer that divides a swept optical signal between a reference arm and a sample arm and combines optical signals returning from the reference arm and the sample arm to generate an interference signal;a MEMS tunable VCSEL that generates the swept optical signal, the MEMS tunable VCSEL including an active region substrate having active layers that amplify light, and an optical membrane device that is attached to the active region substrate; anda detection system that detects the interference signal.2. The system of claim 1 , wherein the MEMS VCSEL comprises:an optical bench on which the MEMS tunable VCSEL is installed, the MEMS tunable VCSEL emitting the swept optical signal, which propagates parallel to a top surface of the optical bench.3. A system as claimed in claim 2 , further comprising a focusing lens secured to the optical bench for coupling the swept optical signal into an optical fiber for transmission to the interferometer.4. A system as claimed in claim 2 , further comprising a hermetic package containing the optical bench.5. A system as claimed in claim 4 , further comprising a thermoelectric cooler installed between the optical bench and in the hermetic package to control a temperature of the optical bench.6. A system as ...

Rigid High Power and High Speed Lasing Grid Structures

Disclosed herein are various embodiments for stronger and more powerful high speed laser arrays. For example, an apparatus is disclosed that comprises (1) a single laser emitting epitaxial structure that comprises a plurality of laser regions, each laser region of the single laser emitting epitaxial structure being electrically isolated within the single laser emitting epitaxial structure itself relative to the other laser regions of the single laser emitting epitaxial structure, and (2) an electrical waveguide configured to provide current to the laser regions. 1. An apparatus comprising:a single laser emitting epitaxial structure that comprises a plurality of laser regions, each laser region of the single laser emitting epitaxial structure being electrically isolated within the single laser emitting epitaxial structure itself relative to the other laser regions of the single laser emitting epitaxial structure; andan electrical waveguide configured to provide current to the laser regions.2. The apparatus of wherein the electrical waveguide comprises a plurality of electrical contacts located on a second platform or chip.3. The apparatus of wherein the single laser emitting epitaxial structure comprises a single vertical cavity surface emitting laser (VCSEL) epitaxial structure.4. The apparatus of wherein the single VCSEL epitaxial structure does not include a plurality of mesas.5. The apparatus of wherein the single laser emitting epitaxial structure further comprises a plurality of holes extending therethrough claim 1 , each hole having a layer of oxidation around it claim 1 , the holes and the oxidation layers being positioned to define and electrically isolate the laser regions.6. The apparatus of wherein the single laser emitting epitaxial structure further comprises a plurality of conductive regions formed by ion implantation claim 1 , the ion implantation being positioned to define and electrically isolate the laser regions.7. The apparatus of further ...

ETCHED PLANARIZED VCSEL

An etched planarized VCSEL includes: an active region; a blocking region over the active region, and defining apertures therein; and conductive channel cores in the apertures, wherein the conductive channel cores and blocking region form an isolation region. A method of making the VCSEL includes: forming the active region; forming the blocking region over the active region; etching the apertures in the blocking region; and forming the conductive channel cores in the apertures of the blocking region. Another etched planarized VCSEL includes: an active region; a conductive region over the active region, and defining apertures therein; and blocking cores in the apertures, wherein the blocking cores and conductive region form an isolation region. A method of making the VCSEL includes: forming the active region; forming the conductive region over the active region; etching the apertures in the conductive region; and forming the blocking cores in the apertures of the conductive region. 1. An etched planarized vertical cavity surface emitting laser (VCSEL) comprising:an active region;a blocking region over the active region, the blocking region defining one or more apertures therein; andone or more conductive channel cores in the one or more apertures of the blocking region, wherein the one or more conductive channel cores and blocking region form an isolation region.2. The VCSEL of claim 1 , further comprising:a bottom mirror region below the active region; anda top mirror region above the isolation region.3. The VCSEL of claim 1 , wherein the blocking region has a thickness from 1 nm to 500 nm.4. The VCSEL of claim 1 , wherein the conductive channel core has a diameter of about 1 micron to about 10 microns.5. The VCSEL of claim 1 , further comprising a plurality of the conductive channel cores in the blocking region.6. The VCSEL of claim 1 , wherein the conductive channel core has higher refractive index than the blocking region.7. The VCSEL of claim 1 , wherein the ...

SEMICONDUCTOR MODIFICATION PROCESS AND STRUCTURES

There is herein described a process for providing improved device performance and fabrication techniques for semiconductors. More particularly, the present invention relates to a process for forming features, such as pixels, on GaN semiconductors using a p-GaN modification and annealing process. The process also relates to a plasma and thermal anneal process which results in a p-GaN modified layer where the annealing simultaneously enables the formation of conductive p-GaNand modified p-GaN regions that behave in an n-like manner and block vertical current flow. The process also extends to Resonant-Cavity Light Emitting Diodes (RCLEDs), pixels with a variety of sizes and electrically insulating planar layer for electrical tracks and bond pads. 1. A fabrication process for electronic components comprising the following steps:depositing a mask feature onto a GaN p-layer to form a structure wherein some areas of the structure are protected by the mask feature and others are not, forming unprotected mask regions; andwherein processing of unprotected mask regions is capable of forming areas with modified electrical characteristics.2. A fabrication process for electronic components according to claim 1 , wherein the processing of unprotected mask regions causes a reversal in the effective doping of the p-GaN regions such that it behaves as n-doped GaN.3. A fabrication process for electronic components according to claim 1 , wherein the process comprises:exposing the structure to a plasma treatment;wherein the areas not protected by the mask feature are exposed to the plasma treatment and form modified n-doped behaving regions due to the plasma and the areas protected by the mask are shielded from the plasma treatment and remain unmodified p-GaN.4. A fabrication process for electronic components according to claim 3 , wherein after plasma treatment claim 3 , an annealing process is applied to the structure claim 3 , and wherein optionally the mask is removed or retained ...

OCT System with Bonded MEMS Tunable Mirror VCSEL Swept Source

A microelectromechanical systems (MEMS)-tunable vertical-cavity surface-emitting laser (VCSEL) in which the MEMS mirror is bonded to the active region. This allows for a separate electrostatic cavity that is outside the laser's optical resonant cavity. Moreover, the use of this cavity configuration allows the MEMS mirror to be tuned by pulling the mirror away from the active region. This reduces the risk of snap down. Moreover, since the MEMS mirror is now bonded to the active region, much wider latitude is available in the technologies that are used to fabricate the MEMS mirror. This is preferably deployed as a swept source in an optical coherence tomography (OCT) system. 1. A method for fabricating a microelectromechanical systems (MEMS)-tunable vertical-cavity surface-emitting laser (VCSEL) , the method comprising:providing an active region substrate having active layers that amplify light; andbonding an optical membrane device to the active region substrate.2. A method as claimed in claim 1 , wherein bonding the optical membrane device to the active region substrate comprises metal bonding the optical membrane device to the active region substrate.3. A method as claimed in claim 1 , wherein bonding the optical membrane device to the active region substrate comprises solder bonding the optical membrane device to the active region substrate.4. A method as claimed in claim 1 , wherein bonding the optical membrane device to the active region substrate comprises thermocompression bonding the optical membrane device to the active region substrate.5. A method as claimed in claim 1 , wherein a distance between the active region substrate and the membrane device is less than a micrometer.6. A method as claimed in claim 1 , further comprising fabricating the optical membrane device by releasing a membrane structure by partially removing a release layer.7. A method as claimed in claim 6 , wherein the membrane structure is deflected between 1 and 3 μm to tune the VCSEL.8. A ...

A WAVELENGTH TUNABLE PHOTON SOURCE WITH SEALED INNER VOLUME

There is presented a method of providing a wavelength tunable photon source (), comprising bonding a first element () with a first mirror (), a second element () with a second mirror () and a third element () with a photon emitter together in a structure enclosing an inner volume () being a sealed volume, and forming a bonding interface () which is gas-tight, so that the first mirror () is placed in the inner volume () so the first mirror () may move within the inner volume (). The method provides a relatively simple way of obtaining a tunable photon source where the inner volume is sealed. The invention furthermore relates to a corresponding photon source, and use of such photon source. 223-. (canceled)24. The method according to claim 1 , wherein forming the bonding interface comprises forming the bonding interface by direct bonding.25. The method according to claim 1 , wherein the step of forming the bonding interface is preceded by a step of providing a pressure above or below an atmospheric pressure claim 1 , so as to provide a corresponding pressure above or below the atmospheric pressure in the inner volume after the step of forming the bonding interface.26. The method according to claim 1 , wherein the method comprises placing an anti-reflection coating on at least a portion of a surface of the third element which delimits the inner volume.28. The wavelength tunable photon source according to claim 27 , wherein the electrical claim 27 , piezo-electrical claim 27 , thermal or mechanical actuator that is configured to move the first minor within the inner volume comprises an electrode for supporting an electrical field between the first mirror and the electrode so as to move the first minor.29. The wavelength tunable photon source according to claim 28 , wherein the electrical field is arranged for moving the first minor in a direction away from the second minor.30. The wavelength tunable photon source according to claim 27 , wherein the photon emitter is a ...

ELECTRO-OPTICAL COMPONENT

The invention relates, inter alia, to a method for producing an electro-optical component () suitable for emitting electromagnetic radiation (), wherein in the method 114-. (canceled)1560. An electro-optical component suitable for emitting electromagnetic radiation , comprising a buried , locally modified first intermediate layer () , in which as a result of the local modification in a lateral direction a refractive index jump is produced which brings about a lateral waveguiding of the electromagnetic radiation in the unmodified region of the first intermediate layer.16. The component as claimed in claim 15 , whereinthe thickness of the buried first intermediate layer and the lateral dimensions of the unmodified section of the buried first intermediate layer are chosen in such a way that the lateral mode or the lateral modes of the electromagnetic radiation is/are guided by the unmodified region of the buried intermediate layer,a second intermediate layer is grown on the locally modified first intermediate layer and is locally strained as a result of the modification of the buried first intermediate layer,a third intermediate layer is grown epitaxially on the locally strained second intermediate layer, in which third intermediate layer at least one material parameter is location-dependent on account of the local strain in the second intermediate layer,the electromagnetic radiation is generated exclusively in that region of the third intermediate layer which is situated above the unmodified section of the first intermediate layer, andthe regions of the third intermediate layer which are situated above the modified sections of the first intermediate layer are transparent to the electromagnetic radiation generated. The invention relates to a method for producing an electro-optical component suitable for emitting electromagnetic radiation.A method of this type is known from the International Patent Application WO 2007/062625. In the previously known method, lateral ...

Electro-Optic Modulator Device, Optical Device and Method of Making an Optical Device

An electro-optic modulator device includes a modulation region, a reflecting region, a conductive line and an anti-reflecting region. The modulation region includes a doped region. The reflecting region is over the modulation region. The conductive line is connected to the doped region. The conductive line extends through the reflecting region. The anti-reflecting region is on an opposite surface of the modulation region from the reflecting region.

Laser With Perovskite Gain Layer

Within examples, a laser includes a first electrode and a second electrode; a first transport layer and a second transport layer that are between the first electrode and the second electrode; a gain layer positioned between the first transport layer and the second transport layer, where the gain layer comprises a material having a Perovskite crystal structure; and a substrate on which the first electrode, the second electrode, the first transport layer, the second transport layer, and the gain layer are formed, where a distributed feedback (DFB) waveguide is formed within the first transport layer, and where the laser is configured such that a current flowing through the gain layer between the first electrode and the second electrode causes the gain layer to emit coherent light. Examples also include methods for fabricating the laser, as well as additional lasers and methods for forming those lasers. 119-. (canceled)20. A method of fabricating a laser , the method comprising:forming a first distributed Bragg reflector (DBR) on a substrate;forming a first electrode on the first DBR;forming a first transport layer on the first electrode;forming, via spin coating deposition or evaporation deposition, a gain layer on the first transport layer, wherein the gain layer comprises a material having a Perovskite crystal structure;forming a second transport layer on the gain layer;forming a second electrode on the second transport layer such that the second electrode comprises an aperture; andforming a second DBR within the aperture of the second electrode.2125-. (canceled)26. The method of claim 20 , further comprising:forming an electrically insulating layer between the first transport layer and the first electrode, wherein the electrically insulating layer includes a second aperture,wherein a portion of the first electrode is positioned within the second aperture.2732-. (canceled)33. The method of claim 20 , wherein the material having the Perovskite crystal structure ...

Method to fabricate GaN-based vertical-cavity surface-emitting devices featuring silicon-diffusion defined current blocking layer

This invention discloses a method for the fabrication of GaN-based vertical cavity surface-emitting devices featuring a silicon-diffusion defined current blocking layer (CBL). Such devices include vertical-cavity surface-emitting laser (VCSEL) and resonant-cavity light-emitting diode (RCLED). The silicon-diffused P-type GaN region can be converted into N-type GaN and thereby attaining a current blocking effect under reverse bias. And the surface of the silicon-diffused area is flat so the thickness of subsequent optical coating is uniform across the emitting aperture. Thus, this method effectively reduces the optical-mode field diameter of the device, significantly decreases the spectral width of LED, and produces single-mode emission of VCSEL

SYSTEM AND METHOD FOR COMPACT ELECTRO-OPTICAL INTERFACE

An electro-optical interface system is disclosed which incorporates a housing, an electrical circuit supported from the housing and configured to interface to a plurality of remote electrical components, an electronics subsystem and an optical subsystem. The electronics subsystem is housed within the housing and in communication with the electrical circuit. The optical subsystem is housed within the housing and in communication with the electronics subsystem. The optical subsystem receives electrical signals from the electronics subsystem which are representative of electrical signals received from the remote electrical components, and converts the received electrical signals into optical signals for transmission to a remote subsystem. 1. An electro-optical interface system comprising:a housing;an electrical circuit supported from the housing and configured to interface to a plurality of remote electrical components;an electronics subsystem housed within the housing and in communication with the electrical circuit;an optical subsystem housed within the housing and in communication with the electronics subsystem for receiving electrical signals from the electronics subsystem representative of electrical signals received from the remote electrical components, and converting the received electrical signals into optical signals for transmission to a remote subsystem.2. The system of claim 1 , further comprising a length of optical fiber at least partially housed in the housing and in communication with the optical subsystem for transmitting the optical signals to the remote subsystem.3. The system of claim 1 , further comprising a graded index (GRIN) rod element disposed adjacent the optical subsystem claim 1 , the GRIN rod element configured to collimate and focus the optical signals.4. The system of claim 2 , further comprising a ferrule sleeve housed within the housing for encasing a portion of the optical fiber.5. The system of claim 1 , wherein the housing ...

Light-emitting element and method of manufacturing the same

A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21 a and a second surface 21 b that is opposed to the first surface 21 a , an active layer 23 that faces the second surface 21 b of the first compound semiconductor layer 21 , and a second compound semiconductor layer 22 including a first surface 22 a that faces the active layer 23 and a second surface 22 b that is opposed to the first surface 22 a are laminated; a first light reflection layer 41 that is provided on the first surface 21 a side of the first compound semiconductor layer 21 ; and a second light reflection layer 42 that is provided on the second surface 22 b side of the second compound semiconductor layer 22 . The first light reflection layer 41 includes a concave mirror portion 43 , and the second light reflection layer 42 has a flat shape.

Rigid High Power and High Speed Lasing Grid Structures

Disclosed herein are various embodiments for stronger and more powerful high speed laser arrays. For example, an apparatus is disclosed that comprises an epitaxial material comprising a mesa structure in combination with an electrical waveguide, wherein the mesa structure comprises a plurality of laser regions within the mesa structure itself, each laser region of the mesa structure being electrically isolated within the mesa structure itself relative to the other laser regions of the mesa structure. 1. An apparatus comprising:an electrical waveguide;an epitaxial material comprising an active mesa structure, wherein the active mesa structure comprises a plurality of laser regions within the active mesa structure itself, each laser region of the active mesa structure being electrically isolated within the active mesa structure itself relative to the other laser regions of the active mesa structure;a substrate;a contact layer that extends beneath the active mesa structure and is positioned above the substrate; anda structure separated from the active mesa structure, wherein the structure provides a contact that shorts the structure to the contact layer to provide a path for a current flow from the electrical waveguide to deliver energy to the laser regions;wherein the electrical waveguide is configured to provide the current flow to the laser regions and the structure via a plurality of electrical waveguide contacts, the electrical waveguide contacts comprising a first contact for electrical connection with the laser regions and a second contact for electrical connection with the structure contact; andwherein the contact layer is adapted to carry a current load from the electrical waveguide and spread current horizontally through the contact layer to the active mesa structure including interior laser region portions of the active mesa structure for injecting the laser regions with current to produce lasing from the laser regions.2. The apparatus of wherein the ...

LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME

A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer. 1. A method of manufacturing a light emitting element comprising , sequentially:(a) forming a first light reflecting layer having a convex shape formed from a multilayer film on a substrate for manufacturing a light emitting element;(b) forming a layered structure body by layering a first compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, an active layer formed from a GaN-based compound semiconductor, which contacts the second surface of the first compound semiconductor layer, and a second compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, and in which the first surface contacts the active layer on the substrate for manufacturing a light emitting element that includes the first light reflecting layer;(c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film;(d) fixing the second light ...

Packaging optoelectronic components and cmos circuitry using silicon-on-insulator substrates for photonics applications

Package structures and methods are provided to integrate optoelectronic and CMOS devices using SOI semiconductor substrates for photonics applications. For example, a package structure includes an integrated circuit (IC) chip, and an optoelectronics device and interposer mounted to the IC chip. The IC chip includes a SOI substrate having a buried oxide layer, an active silicon layer disposed adjacent to the buried oxide layer, and a BEOL structure formed over the active silicon layer. An optical waveguide structure is patterned from the active silicon layer of the IC chip. The optoelectronics device is mounted on the buried oxide layer in alignment with a portion of the optical waveguide structure to enable direct or adiabatic coupling between the optoelectronics device and the optical waveguide structure. The interposer is bonded to the BEOL structure, and includes at least one substrate having conductive vias and wiring to provide electrical connections to the BEOL structure.

Data center transmission systems

In the examples provided herein, a data center transmission system includes a VCSEL (vertical-cavity surface-emitting laser) that lases in a single spatial mode with a side mode suppression ratio of at least 25 dB, where the VCSEL is formed on a substrate and lases at a wavelength transparent to the substrate, and further where an output of the VCSEL exits through the substrate. Also, the VCSEL is directly modulated. The system further includes an optical fiber having a first end to receive the output of the VCSEL for propagation along the optical fiber. The optical fiber supports a single spatial mode without supporting higher order spatial modes over a range of wavelengths between 1260 nm and 1360 nm. The system also includes a receiver to receive the directly modulated output of the VCSEL after propagation through the optical fiber.

Silicon dbr structure-integrated light element, and preparation method

The present invention relates to a silicon DBR structure-integrated light device, and a preparation method thereof, and more specifically, to a silicon DBR structure-integrated light device or vertical cavity light emitting diode, and a preparation method thereof, enabling preparation by a small number of layers and capable of reducing process time and costs due to a large contrast in refractive index of a silicon DBR structure formed by depositing silicon in a slanted or vertical manner.

Long wavelength vcsel and integrated vcsel systems on silicon substrates

VCSELs designed to emit light at a characteristic wavelength in a wavelength range of 910-2000 nm and formed on a silicon substrate are provided. Integrated VCSEL systems are also provided that include one or more VCSELs formed on a silicon substrate and one or more electrical, optical, and/or electro-optical components formed and/or mounted onto the silicon substrate. In an integrated VCSEL system, at least one of the one or more electrical, optical, and/or electro-optical components formed and/or mounted onto the silicon substrate is electrically or optically coupled to at least one of the one or more VSCELs on the silicon substrate. Methods for fabricating VCSELs on a silicon substrate and/or fabricating an integrated VCSEL system are also provided.

Devices with ultra-small vertical cavity surface emitting laser emitters incorporating beam steering

A laser array includes a plurality of laser emitters arranged in a plurality of rows and a plurality of columns on a substrate that is non-native to the plurality of laser emitters, and a plurality of driver transistors on the substrate adjacent one or more of the laser diodes. A subset of the plurality of laser emitters includes a string of laser emitters that are connected such that an anode of at least one laser emitter of the subset is connected to a cathode of an adjacent laser emitter of the subset. A driver transistor of the plurality of driver transistors is configured to control a current flowing through the string.

LATERAL ELECTROCHEMICAL ETCHING OF III-NITRIDE MATERIALS FOR MICROFABRICATION

Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs. 1. A III-nitride DBR device comprising:a multi-layer structure having first and second layers formed of III-nitride material, wherein a conductivity of the first layers is different from a conductivity of the second layers;a MQW structure formed adjacent the multi-layer structure, wherein the MQW structure comprises an active region of the device;vias formed into the multi-layer structure proximal to the MQW structure; andregions adjacent the vias in which portions of the second layers have been completely removed to form at least two first layers separated by one or more layers of air.2. The DBR device of claim 1 , wherein the MQW structure forms an active region of a laser.3. The DBR device of claim 1 , wherein the first layers and second layers comprise GaN.4. The DBR device of claim 3 , wherein the second layers comprise high n-type conductivity material.5. The DBR device of claim 1 , wherein the thicknesses of the first layers are substantially the same.6. The DBR device of claim 1 , wherein the thicknesses of the first layers correspond to approximately one-quarter of a selected emission wavelength for the laser.7. The DBR device of claim 1 , wherein the removed portions of the second layers and remaining first layers form a structure having periodic contrast of optical refractive index. This application claims the benefit of U.S. provisional application Ser ...

LOW IMPEDANCE VCSELS

In example implementations of a vertical-cavity surface-emitting laser (VCSEL), the VCSEL includes a p-type distributed Bragg reflector (p-DBR) layer and a p-type ohmic (p-ohmic) contact layer adjacent to the p-DBR layer. The p-DBR layer may include an oxide aperture and the p-ohmic contact layer may have an opening that is aligned with the oxide aperture. The opening may be filled with a dielectric material. A metal layer may be coupled to the p-ohmic contact layer and encapsulate the dielectric material. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. A method , comprising:creating on a substrate a p-type distributed Bragg reflector (p-DBR) layer having a p-type ohmic (p-ohmic) contact layer, wherein the p-DBR layer comprises an alternating stack of high refractive index layers and low refractive index layers, wherein the p-ohmic contact layer has an opening;applying a wet oxidation to the p-DBR layer to oxidize at least one low refractive index layer to form an oxide aperture, wherein the oxide aperture is aligned with the opening;filling the opening in the p-ohmic contact layer with a dielectric material; andencapsulating the dielectric material with a metal layer coupled to the p-ohmic contact layer.10. The method of claim 9 , wherein the alternating stack of the p-DBR layer comprises less than 30 layers.11. The method of claim 9 , further comprising:applying a polyimide or a benzo-cyclo-butane to the p-DBR layer;creating vias to the p-ohmic contact layer and an n-type ohmic (n-ohmic) contact layer; andadding a pad and interconnect metal over the polyimide or the benzo-cyclo-butane and coupled to the p-ohmic contact layer and the n-ohmic contact layer.12. The method of claim 9 , further comprising:creating on the substrate a n-type distributed Bragg reflector (n-DBR) layer; andcreating on the substrate a laser cavity layer adjacent to the n-DBR layer and the p-DBR layer,13. A method claim 9 , comprising ...

Semiconductor laser

A semiconductor laser includes a contact carrier having electrical contact surfaces to electrically contact a semiconductor layer sequence, an electrical connecting line from a main side of the semiconductor layer sequence facing away from the contact carrier and a plurality of capacitors, wherein the connecting line is located on or in the semiconductor layer sequence, at least two of the capacitors are present, the capacitances of which differ by at least a factor of 50, the capacitor having a smaller capacitance is configured to supply the active zone with current immediately after a switch-on operation, and the capacitor having the larger capacitance is configured to a subsequent current supply, the capacitor having the smaller capacitance directly electrically connects to the active zone, and a resistor is arranged between the capacitor having the larger capacitance and the active zone, the resistor having a resistance of at least 100 Ω.

LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME

A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer. 1. A light emitting element comprising:a layered structure body formed by layering a first compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, an active layer formed from a GaN-based compound semiconductor, which contacts the second surface of the first compound semiconductor layer, and a second compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, and in which the first surface contacts the active layer;a first electrode and a first light reflecting layer; anda second electrode and a second light reflecting layer formed from a multilayer film formed on the second surface of the second compound semiconductor layer,wherein a concavity with a forward tapered side surface is formed on the first surface of the first compound semiconductor layer,the first light reflecting layer is formed on at least the concavity, andthe first electrode is formed on at least the first surface of the first compound ...

LIGHT EMITTING DEVICE WITH TRANSPARENT CONDUCTIVE GROUP-III NITRIDE LAYER

A group III-nitride semiconductor device comprises a light emitting semiconductor structure comprising a p-type layer and an n-type layer operable as a light emitting diode or laser. On top of the p-type layer there is arranged an n+ or n++-type layer of a group III-nitride, which is transparent to the light emitted from the underlying semiconductor structure and of sufficiently high electrical conductivity to provide lateral spreading of injection current for the light-emitting semiconductor structure. 120.-. (canceled)21. A method for manufacturing a light-emitting semiconductor device , the method comprising:depositing an n-type layer composed of a nitride of at least one group-III element;depositing a p-type layer using metal organic vapor phase epitaxy, the p-type layer being p-type and composed of a nitride of at least one group-III element; anddepositing a transparent, current spreading layer on the p-type layer using molecular beam epitaxy, the transparent, current spreading layer being n-type and composed of a nitride of at least one group-III element, the transparent, current spreading layer being configured to be transparent to light emitted from the light-emitting semiconductor structure and of sufficiently high electrical conductivity to provide lateral spreading of injection current for the light-emitting semiconductor structure within the transparent, current spreading layer.22. The method according to claim 21 , wherein the n-type layer is deposited using metal organic vapor phase epitaxy.23. The method according to claim 21 , wherein as deposited the p-type layer has passivated dopants claim 21 , the method further comprising activating said passivated dopants in at least a portion of the p-type layer.24. The method according to claim 23 , wherein the passivated dopants are activated in said portion of the p-type layer by applying a local heat treatment.25. The method according to claim 21 , further comprising producing a current aperture stop ...

Surface-mount compatible vcsel array

A VCSEL/VECSEL array design is disclosed that results in arrays that can be directly soldered to a PCB using conventional surface-mount assembly and soldering techniques for mass production. The completed VCSEL array does not need a separate package and no precision sub-mount and flip-chip bonding processes are required. The design allows for on-wafer probing of the completed arrays prior to singulation of the die from the wafer. Embodiments relate to semiconductor devices, and more particularly to multibeam arrays of semiconductor lasers for high power and high frequency applications and methods of making and using the same.

VCSEL WITH SELF-ALIGNED MICROLENS TO IMPROVE BEAM DIVERGENCE

In some embodiments, the present disclosure relates to a method of making a microlens for a VCSEL device. The method includes forming a first lens layer over a second reflector layer. The first lens layer has a first average concentration of a first element. A first additional reflector layer is formed over the first lens layer. A second lens layer is formed over the first additional reflector layer. The second lens layer has a second average concentration of the first element greater than the first average concentration. A second additional reflector layer is formed over the second lens layer. An oxidation process is performed to oxidize peripheral portions of the first and second lens layers to form oxidized peripheral portions of the first and second lens layer. The oxidized peripheral portions of the second lens layer are wider than the oxidized peripheral portions of the first lens layer. 1. A method of making a microlens for a vertical cavity surface emitting laser (VCSEL) device , the method comprising:forming a first lens layer over a second reflector layer and comprising a first average concentration of a first element;forming a first additional reflector layer over the first lens layer;forming a second lens layer over the first additional reflector layer and comprising a second average concentration of the first element greater than the first average concentration;forming a second additional reflector layer over the second lens layer; andperforming an oxidation process to oxidize peripheral portions of the first and second lens layers to form oxidized peripheral portions of the first lens layer and oxidized peripheral portions of the second lens layer, wherein the oxidized peripheral portions of the second lens layer are wider than the oxidized peripheral portions of the first lens layer.2. The method of claim 1 , further comprises:performing an etch process according to a masking layer to remove outermost edges of the first lens layer, the first ...

A Surface-Mount Compatible VCSEL Array

A VCSELNECSEL array design is disclosed that results in arrays that can be directly soldered to a PCB using conventional surface-mount assembly and soldering techniques for mass production. The completed VCSEL array does not need a separate package and no precision sub-mount and flip-chip bonding processes are required. The design allows for on-wafer probing of the completed arrays prior to singulation of the die from the wafer. Embodiments relate to semiconductor devices, and more particularly to multibeam arrays of semiconductor lasers for high power and high frequency applications and methods of making and using the same. 1. An array of vertical-cavity surface-emitting lasers or other semiconductor light-emitting devices on a single semiconductor die , comprising:a first distributed Bragg reflector (DBR) including an intracavity layer, the intracavity contact layer configured to allow lateral conduction across a semiconductor wafer;a second DBR and p-n junction gain regions between the first DBR and the second DBR;a plurality of mesas fabricated by etching layers through the second DBR, the p-n junction gain regions, and a portion of the first DBR to the intracavity contact layer so that the p-n junction regions of the mesas are separated and the intracavity contact layer is exposed for making electrical contact to a surface of the intracavity contact layer, wherein the plurality of mesas include shorted mesas and laser mesas;a metallic contact deposited on the intracavity contact layer configured to conduct current laterally from near each of the laser mesas to connect to the shorted mesas to reduce current spreading loss in the intracavity contact layer;each laser mesa including a first ohmic contact at a top of a laser mesa structure and being insulated on sides of the laser mesa structure by a dielectric layer that prevents shorting of each p-n junction gain region of each laser mesa so that current flows through each p-n junction gain region of each laser ...

Rigid High Power and High Speed Lasing Grid Structures

Disclosed herein are various embodiments for stronger and more powerful high speed laser arrays. For example, an apparatus is disclosed that comprises an active mesa structure in combination with an electrical waveguide, wherein the active mesa structure comprises a plurality of laser regions within the active mesa structure itself, each laser region of the active mesa structure being electrically isolated within the active mesa structure itself relative to the other laser regions of the active mesa structure. 1. A multi-laser semiconductor apparatus comprising:an electrical waveguide;an active mesa structure, wherein the active mesa structure comprises a plurality of semiconductor laser regions within the active mesa structure itself, each semiconductor laser region of the active mesa structure being electrically isolated within the active mesa structure itself relative to the other semiconductor laser regions of the active mesa structure;a substrate;a contact layer that extends beneath the active mesa structure and is positioned above the substrate; anda structure separated from the active mesa structure, wherein the structure provides a contact that shorts the structure to the contact layer to provide a path for a current flow from the electrical waveguide to deliver energy to the semiconductor laser regions;wherein the electrical waveguide is configured to provide the current flow to the semiconductor laser regions and the structure via a plurality of electrical waveguide contacts, the electrical waveguide contacts comprising a first contact for electrical connection with the semiconductor laser regions and a second contact for electrical connection with the structure contact; andwherein the contact layer is adapted to carry a current load from the electrical waveguide and spread current horizontally through the contact layer to the active mesa structure including interior semiconductor laser region portions of the active mesa structure for injecting the ...

Waveguide-coupled vertical cavity laser

An integrated circuit includes an optical source that provides an optical signal to an optical waveguide. In particular, the optical source may be implemented by fusion-bonding a III-V semiconductor to a semiconductor layer in the integrated circuit. In conjunction with surrounding mirrors (at least one of which is other than a distributed Bragg reflector), this structure may provide a cavity with suitable optical gain at a wavelength in the optical signal along a vertical direction that is perpendicular to a plane of the semiconductor layer. For example, the optical source may include a vertical-cavity surface-emitting laser (VCSEL). Moreover, the optical waveguide, defined in the semiconductor layer, may be separated from the optical source by a horizontal gap in the plane of the semiconductor layer. During operation of the optical source, the optical signal may be optically coupled across the gap from the optical source to the optical waveguide.

Light emitting element

A light emitting element includes at least a first light reflecting layer formed on a surface of a substrate, a laminated structural body made of a first compound semiconductor layer, an active layer and a second compound semiconductor layer formed on the first light reflecting layer, and a second electrode and a second light reflecting layer formed on the second compound semiconductor layer, the laminated structural body is configured from a plurality of laminated structural body units, a light emitting element unit is configured from each of the laminated structural body units, and a resonator length in the light emitting element unit is different in every light emitting element unit.

Laser Diode and Method for Manufacturing a Laser Diode

A laser diode and a method for manufacturing a laser diode are disclosed. In an embodiment a laser diode includes a surface emitting semiconductor laser configured to emit electromagnetic radiation and an optical element arranged downstream of the semiconductor laser in a radiation direction, wherein the optical element includes a diffractive structure or a meta-optical structure or a lens structure, and wherein the optical element and the semiconductor laser are cohesively connected to each other.

ETCHED PLANARIZED VCSEL

An etched planarized VCSEL includes: an active region; a blocking region over the active region, and defining apertures therein; and conductive channel cores in the apertures, wherein the conductive channel cores and blocking region form an isolation region. A method of making the VCSEL includes: forming the active region; forming the blocking region over the active region; etching the apertures in the blocking region; and forming the conductive channel cores in the apertures of the blocking region. Another etched planarized VCSEL includes: an active region; a conductive region over the active region, and defining apertures therein; and blocking cores in the apertures, wherein the blocking cores and conductive region form an isolation region. A method of making the VCSEL includes: forming the active region; forming the conductive region over the active region; etching the apertures in the conductive region; and forming the blocking cores in the apertures of the conductive region. 1. A vertical cavity surface emitting laser (VCSEL) array comprising:an active region;a blocking region disposed above the active region and including a plurality of laterally arranged apertures;a plurality of conductive channel cores in the plurality of laterally arranged apertures;a bottom mirror region disposed below the active region;a top mirror region disposed above the conductive channel cores; anda light emitting surface associated with the plurality of conductive channel cores; andwherein the plurality of conductive channel cores, the top mirror region, and the light emitting surface are planarized.2. The VCSEL array of claim 1 , wherein the VCSEL array is devoid of a mesa structure.3. The VCSEL array of claim 1 , wherein the plurality of conductive channel cores and the blocking region form an isolation region.4. The VCSEL array of claim 1 , wherein the bottom mirror region is disposed below the plurality of conductive channel cores.5. The VCSEL array of claim 1 , wherein the ...

METHOD AND APPARATUS INCLUDING IMPROVED VERTICAL-CAVITY SURFACE-EMITTING LASERS

VCSELs and methods having improved characteristics. In some embodiments, these include a semiconductor substrate; a vertical-cavity surface-emitting laser (VCSEL) on the substrate; a first electrical contact formed on the VCSEL; a second electrical contact formed on the substrate, wherein the VCSEL includes: a first resonating cavity having first and second mirrors, at least one of which partially transmits light incident on that mirror, wherein the first second mirrors are electrically conductive. A first layer is between the first mirror and the second mirror and has a first aperture that restricts the path of current flow. A second layer is between the first layer and the second mirror and also restricts the electrical current path. A multiple-quantum-well (MQW) structure is between the first mirror and the second mirror, wherein the first and second apertures act together to define a path geometry of the current through the MQW structure. 121-. (canceled)22. An apparatus comprising:a semiconductor substrate; a first mirror structure;', 'a second mirror structure;', 'at least a first aluminum-containing layer and a second aluminum-containing layer between the first and second mirror structures; and', 'a multiple-quantum-well (MQW) structure between the first and second mirror aluminum-containing layers, the MQW structure comprising one or more GaInP quantum wells;, 'a vertical-cavity surface-emitting laser (VCSEL) formed on the substrate, wherein the VCSEL includeswherein an emission wavelength of the VCSEL is greater than 700 nm.23. The apparatus of claim 22 , wherein the MQW structure comprises GaInAlP barrier layers interposed between the one or more GaInP quantum wells.24. The apparatus of claim 22 , wherein the first and second aluminum-containing layers are AlGaInP layers.25. The apparatus of claim 22 , wherein at least one of the first and second mirror structures comprises a plurality of layers.26. The apparatus of claim 25 , wherein each of the first and ...

Semiconductor modification process for conductive and modified electrical regions and related structures

There is herein described a process for providing improved device performance and fabrication techniques for semiconductors. More particularly, the present invention relates to a process for forming features, such as pixels, on GaN semiconductors using a p-GaN modification and annealing process. The process also relates to a plasma and thermal anneal process which results in a p-GaN modified layer where the annealing simultaneously enables the formation of conductive p-GaN and modified p-GaN regions that behave in an n-like manner and block vertical current flow. The process also extends to Resonant-Cavity Light Emitting Diodes (RCLEDs), pixels with a variety of sizes and electrically insulating planar layer for electrical tracks and bond pads.

PLANARIZATION OF BACKSIDE EMITTING VCSEL AND METHOD OF MANUFACTURING THE SAME FOR ARRAY APPLICATION

A method of forming a flip chip backside Vertical Cavity Surface Emitting Laser (VCSEL) package comprising: forming a VCSEL pillar array; applying a dielectric layer to the VCSEL pillar array, the dielectric layer filling trenches in between pillars forming the VCSEL pillar array and covering the pillars; planarizing the VCSEL pillar array to remove the dielectric layer covering the pillars exposing a metal layer on a top surface of the pillars; applying a metal coating on the metal layer on a top surface of the pillars, the metal layer defining a contact pattern of the VCSEL pillar array; and applying solder on the metal coating to flip chip mount the VCSEL pillar array to a substrate package. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. (canceled)12. (canceled)13. (canceled)14. (canceled)15. (canceled)16. (canceled)17. (canceled)18. A flip chip backside Vertical Cavity Surface Emitting Laser (VCSEL) package comprising:a VCSEL pillar array;a dielectric layer filling trenches in between pillars forming the VCSEL pillar array, wherein the VCSEL pillar array is planarized to expose a metal layer on a top surface of the pillars;a metal coating on the metal layer on the top surface of the pillars, the metal layer defining a contact pattern of the VCSEL pillar array, wherein the metal coating attaches a plurality of pillars together;solder applied on the metal coating to flip chip mount the VCSEL pillar array to a substrate package.19. The flip chip backside VCSEL package of claim 18 , comprising electrical connections formed around a perimeter of the VCSEL pillar array.20. The flip chip backside VCSEL package of claim 18 , comprising an optical device attached to a backside of the VCSEL array. This patent application is related to U.S. Provisional Application No. 62/622,668 filed Jan. 26, 2018, entitled “FLIP CHIP PACKAGE OF BACKSIDE ILLUMINATING VCSEL FOR 3D SENSING ARRAY” and U.S ...

LOW IMPEDANCE VCSELS

In example implementations of a vertical-cavity surface-emitting laser (VCSEL), the VCSEL includes a p-type distributed Bragg reflector (p-DBR) layer end a p-type ohmic (p-ohmic) contact layer adjacent to the p-DBR layer. The p DBR layer may include an oxide aperture and the p-ohmic contact layer may have an opening that is aligned with the oxide aperture. The opening may be filled with a dielectric material. A metal layer may be coupled to the p-ohmic contact layer and encapsulate the dielectric material. 1. A vertical-cavity surface-emitting laser (VCSEL) , comprising:a p-type distributed Bragg reflector (p-DBR) layer; wherein the p-DBR layer comprises an oxide aperture;a p-type ohmic (p-ohmic) contact layer adjacent to the p-DBR layer, wherein the p-ohmic contact layer has an opening aligned with the oxide-aperture;a dielectric material filling the opening: anda metal layer encapsulating the dielectric material, wherein the metal layer is coupled to the p-ohmic contact layer,2. The VCSEL of claim 1 , wherein the p-DBR layer comprises a stack of less than 30 alternating layers of a high concentration of aluminum (Al) in an aluminum gallium arsenide (AlGaAs) layer and a low concentration of Al in an AlGaAs layer.3. The VCSEL of claim 2 , wherein the high concentration of Al comprises 92% or greater and the low concentration of Al comprises 12% or less.4. The VCSEL of claim 1 , wherein the dielectric material comprises a material having a refractive index less than 2.5. The VCSEL of claim 1 , wherein the metal layer is patterned to enhance a reflectivity of a particular polarization of light.6. The VCSEL of claim 5 , wherein the metal layer is patterned as a wire grid polarizer.7. The VCSEL of claim 1 , wherein the metal layer comprises a metal that bonds to a top metal layer of the p-ohmic contact layer.8. The VCSEL of claim 1 , further comprising;a diffusion barrier between the p-ohmic contact layer and the metal layer,9. A method claim 1 , comprising:creating on ...

PLANARIZATION OF BACKSIDE EMITTING VCSEL AND METHOD OF MANUFACTURING THE SAME FOR ARRAY APPLICATION

A method of forming a flip chip backside Vertical Cavity Surface Emitting Laser (VCSEL) package comprising: forming a VCSEL pillar array; applying a dielectric layer to the VCSEL pillar array, the dielectric layer filling trenches in between pillars forming the VCSEL pillar array and covering the pillars; planarizing the VCSEL pillar array to remove the dielectric layer covering the pillars exposing a metal layer on a top surface of the pillars; applying a metal coating on the metal layer on a top surface of the pillars, the metal layer defining a contact pattern of the VCSEL pillar array; and applying solder on the metal coating to flip chip mount the VCSEL pillar array to a substrate package. 1. A method of forming a flip chip backside Vertical Cavity Surface Emitting Laser (VCSEL) package comprising:forming a VCSEL pillar array,applying a dielectric layer to the VCSEL pillar array, the dielectric layer filling trenches in between pillars forming the VCSEL pillar array and covering the pillars;planarizing the VCSEL pillar array to remove the dielectric layer covering the pillars exposing a metal layer on a top surface of the pillars;applying a metal coating on the metal layer on a top surface of the pillars, the metal layer defining a contact pattern of the VCSEL pillar array; andapplying solder on the metal coating to flip chip mount the VCSEL pillar array to a substrate package.2. The method of claim 1 , comprising forming electrical connections around a perimeter of the VCSEL pillar array connecting a back side of a substrate of the VCSEL array and the substrate package.3. The method of claim 2 , wherein forming the electrical connections comprises forming at least one wrap around connection.4. The method of claim 2 , wherein forming the electrical connections comprises forming at least one conductive via.5. The method of claim 1 , wherein forming a VCSEL pillar array comprises:forming a first mirror device on a substrate;forming an active region on the first ...

Modified emitter array

An emitter array, may comprise a first set of emitters that has a nominal optical output power at an operating voltage. The emitter array may comprise a second set of emitters that has substantially less than the nominal optical output power or no optical output power at the operating voltage. The first set of emitters and the second set of emitters may be interleaved with each other to form a two-dimensional regular pattern of emitters that emits a random pattern of light at the nominal optical output power at the operating voltage. The first set of emitters and the second set of emitters may be electrically connected in parallel.

Resonant optical cavity light emitting device

Resonant optical cavity light emitting devices are disclosed, where the device includes an opaque substrate, a first reflective layer, a first spacer region, a light emitting region, a second spacer region, and a second reflective layer. The light emitting region is configured to emit a target emission deep ultraviolet wavelength and is positioned at a separation distance from the reflector. The second reflective layer may have a metal composition comprising elemental aluminum and a thickness less than 15 nm. The device has an optical cavity comprising the first spacer region, the second spacer region and the light emitting region, where the optical cavity has a total thickness less than or equal to K·λ/n. K is a constant ranging from 0.25 to 10, λ is the target wavelength, and n is an effective refractive index of the optical cavity at the target wavelength.

Nitride semiconductor multilayer structure, light emitting element, light source apparatus, and method for producing nitride semiconductor multilayer structure

A nitride semiconductor multilayer structure includes a first nitride semiconductor layer; a second nitride semiconductor layer; and a third nitride semiconductor layer formed between the first nitride semiconductor layer and the second nitride semiconductor layer. The third nitride semiconductor layer includes a first region and a second region that surrounds the first region in a same plane, and an indium content of the second region is lower than an indium content of the first region.

GRATING STRUCTURE FOR SURFACE-EMITTING LASER

A vertical-cavity surface-emitting laser (VCSEL) may include at least one layer forming a grating structure with a selected period, depth, and fill factor, wherein the period, the depth, and the fill factor of the grating structure are configured to achieve greater than a threshold level of efficiency for the VCSEL, less than a threshold current increase caused by power loss from higher order diffraction associated with the grating structure, and greater than a threshold polarization selectivity at an emission wavelength of the VCSEL. 1. A vertical-cavity surface-emitting laser (VCSEL) , comprising: 'wherein the period, the depth, and the fill factor of the grating structure are configured to achieve greater than a threshold level of efficiency for the VCSEL, less than a threshold current increase caused by power loss from higher order diffraction associated with the grating structure, and greater than a threshold polarization selectivity at an emission wavelength of the VCSEL.', 'at least one layer forming a grating structure with a selected period, depth, and fill factor,'}2. The VCSEL of claim 1 , wherein the threshold polarization selectivity is greater than or equal to 10 decibels (dB) polarization selectivity.3. The VCSEL of claim 1 , wherein the threshold current increase is less than 10% current increase.4. The VCSEL of claim 1 , wherein the threshold level of efficiency is greater than 32% wall-plug efficiency.5. The VCSEL of claim 1 , wherein the threshold polarization selectivity is greater than or equal to 10 decibels (dB) polarization selectivity claim 1 , the current increase is less than 10% current increase claim 1 , and the threshold level of efficiency is greater than 32% wall-plug efficiency.6. The VCSEL of claim 1 , wherein the emission wavelength is between 850 nm and 1550 nm.7. The VCSEL of claim 1 , wherein an index contrast of the grating structure is less than a threshold index contrast.8. The VCSEL of claim 1 , wherein the period claim 1 , ...

Method for a gan vertical microcavity surface emitting laser (vcsel)

Methods and structures for forming vertical-cavity light-emitting devices are described. An n-side or bottom-side layer may be laterally etched to form a porous semiconductor region and converted to a porous oxide. The porous oxide can provide a current-blocking and guiding layer that aids in directing bias current through an active area of the light-emitting device. Distributed Bragg reflectors may be fabricated on both sides of the active region to form a vertical-cavity surface-emitting laser. The light-emitting devices may be formed from III-nitride materials.

III-V Photonic Integration on Silicon

Photonic integrated circuits on silicon are disclosed. By bonding a wafer of HI-V material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. The coupling between the silicon waveguide and the III-V gain region allows for integration of low threshold lasers, tunable lasers, and other photonic integrated circuits with Complimentary Metal Oxide Semiconductor (CMOS) integrated circuits.

METHOD FOR THE REUSE OF GALLIUM NITRIDE EPITAXIAL SUBSTRATES

A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates. 1. A method for reusing a III-nitride substrate , comprising:providing an epitaxy-ready bulk III-nitride substrate;growing one or more sacrificial layers on or above the substrate;growing one or more device layers on or above the sacrificial layers; andselectively etching the sacrificial layers to separate the device layers from the substrate without substantially etching the device layers or the substrate.2. A structure , comprising:an epitaxy-ready bulk III-nitride substrate;one or more sacrificial layers on or above the substrate; andone or more device layers on or above the sacrificial layers;wherein the sacrificial layers are selectively etched layers used to separate the device layers from the substrate without the device layers or the substrate being substantially etched. This application is a continuation under 35 U.S.C. Section 120 of co-pending and commonly-assignedU.S. Utility patent application Ser. No. 14/839,405, filed on Aug. 28, 2015, by Casey Holder, Daniel Feezell, Steven P. DenBaars, and Shuji Nakamura, entitled “METHOD FOR THE REUSE OF GALLIUM NITRIDE EPITAXIAL SUBSTRATES” attorney's docket number 30794.446-US-C2 (2012-505-4), which is a continuation under 35 U.S.C. Section 120 of co-pending and commonly-assignedU.S. Utility patent application Ser. No. 14/493,099, filed on Sep. 22, 2014, by Casey Holder, Daniel Feezell, Steven P. DenBaars, and Shuji Nakamura, entitled “METHOD FOR THE REUSE OF GALLIUM NITRIDE EPITAXIAL SUBSTRATES” attorney's docket number 30794.446-US-C1 (2012-505 ...

LASER DIODE ARRAY, METHOD OF MANUFACTURING THE SAME, PRINTER, AND OPTICAL COMMUNICATION DEVICE

A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface. 1. A laser diode array comprising:a support substrate including a support base, a first insulating layer, an adhesive layer, a metal layer, and a second insulating layer; anda plurality of vertical resonator structures, each having columnar shape and electrically connected to the metal layer, where each of the vertical resonator structures includes a first contact layer directly connected to the metal layer, a first DBR layer, a first spacer layer, an active layer, a second spacer layer, a second DBR layer, and a second contact layer sequentially from the metal layer side;wherein an aperture is formed in a second insulating layer so as to expose a portion of the metal layer, andwherein the second insulating layer is formed over said each of the vertical resonator structures.2. An optical communication module comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the laser diode array according to .'}3. The optical communication module according to claim 2 , further comprising:a waveguide member optically coupled to the laser diode array.4. The laser diode array according to claim 1 , wherein ...

VERTICAL CAVITY SURFACE EMITTING LASER

A vertical cavity surface emitting laser (VCSEL) has first and second electrical contacts, and an optical resonator. The optical resonator has first and second distributed Bragg reflectors (DBRs), an active layer, a distributed heterojunction bipolar phototransistor (DHBP), and an optical guide. The DHBP has a collector layer, light sensitive layer; a base layer; and an emitter layer. There is an optical coupling between the active layer and the DHBP for providing an active carrier confinement by the DHBP. The optical guide guides an optical mode within the optical resonator during operation. The optical guide is outside a current flow which can be provided by the first and second electrical contacts during operation of the VCSEL. The optical guide is outside a layer sequence between the first and second electrical contacts in the vertical direction of the VCSEL. The optical guide has an oxide aperture arranged in the second DBR. 1. A vertical cavity surface emitting laser comprising:a first electrical contact;a second electrical contact; and a first distributed Bragg reflector;', 'an active layer;', 'a distributed heterojunction bipolar phototransistor;', 'a second distributed Bragg reflector; and', 'an optical guiding structure,, 'an optical resonator, the optical resonator comprisingwherein the distributed heterojunction bipolar phototransistor comprises a collector layer, a light sensitive layer, a base layer, and an emitter layer,wherein the distributed heterojunction bipolar phototransistor is arranged such that there is an optical coupling between the active layer and the distributed heterojunction bipolar phototransistor for providing an active carrier confinement by means of the distributed heterojunction bipolar phototransistor,wherein the optical guiding structure is arranged to guide an optical mode within the optical resonator of the vertical cavity surface emitting laser during operation of the vertical cavity surface emitting laser,wherein the optical ...

Devices incorporating integrated detectors and ultra-small vertical cavity surface emitting laser emitters

A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.

OCT System with Bonded MEMS Tunable Mirror VCSEL Swept Source

A microelectromechanical systems (MEMS)-tunable vertical-cavity surface-emitting laser (VCSEL) in which the MEMS mirror is bonded to the active region. This allows for a separate electrostatic cavity that is outside the laser's optical resonant cavity. Moreover, the use of this cavity configuration allows the MEMS mirror to be tuned by pulling the mirror away from the active region. This reduces the risk of snap down. Moreover, since the MEMS mirror is now bonded to the active region, much wider latitude is available in the technologies that are used to fabricate the MEMS mirror. This is preferably deployed as a swept source in an optical coherence tomography (OCT) system.

Nonequilibrium pulsed femtosecond semiconductor disk laser

A surface-emitting semiconductor laser system contains at least one MQW unit of at least three constituent QWs, axially separated from one another substantially non-equidistantly. The MQW unit is located within the axial extent covered, in operation of the laser, by a half-cycle of the standing wave of the field at a wavelength within the gain spectrum of the gain medium; immediately neighboring nodes of the standing wave are on opposite sides of the MQW unit. So-configured MQW unit can be repeated multiple times and/or complemented with individual QWs disposed outside of the half-cycle of the standing wave with which such MQW unit is associated. The semiconductor laser further includes a pump source configured to input energy in the semiconductor gain medium and a mode-locking element to initiate mode-locking.

VCSEL array with tight pitch and high efficiency

An optoelectronic device includes a semiconductor substrate. A first set of thin-film layers is disposed on the substrate and defines a lower distributed Bragg-reflector (DBR) stack. A second set of thin-film layers is disposed over the lower DBR stack and defines an optical emission region, which is contained in a mesa defined by multiple trenches, which are disposed around the optical emission region without fully surrounding the optical emission region. A third set of thin-film layers is disposed over the optical emission region and defines an upper DBR stack. Electrodes are disposed around the mesa in gaps between the trenches and are configured to apply an excitation current to the optical emission region. 1. An optoelectronic device , comprising:a semiconductor substrate;a first set of thin-film layers disposed on the substrate and defining a lower distributed Bragg-reflector (DBR) stack;a second set of thin-film layers disposed over the lower DBR stack and defining an optical emission region, which is contained in a mesa defined by multiple trenches, which are disposed around the optical emission region without fully surrounding the optical emission region;a third set of thin-film layers disposed over the optical emission region and defining an upper DBR stack; andelectrodes, which are disposed around the mesa in gaps between the trenches and are configured to apply an excitation current to the optical emission region.2. The device according to claim 1 , and comprising a transparent conductive layer in electrical contact with the electrodes and extending across the mesa over at least the second set of thin-film layers.3. The device according to claim 1 , wherein the third set of thin-film layers comprises dielectric layers.4. The device according to claim 3 , wherein the electrodes comprise a metal claim 3 , which is deposited in vias that extend through the third set of thin-film layers.5. The device according to claim 1 , wherein the third set of thin-film ...

MICROPILLAR OPTOELECTRONIC DEVICE

The invention discloses a semiconductor optoelectronic micro-device comprising at least one cavity and at least one multilayer interference reflector. The device represents a micrometer-scale pillar with an arbitrary shape of the cross section. The device includes a vertical optical cavity, a gain medium and means of injection of nonequilibrium carriers into the gain medium, most preferably, via current injection in a p-n-junction geometry. To allow high electric-to-optic power conversion at least one contact is placed on the sidewalls of the micropillar overlapping with at least one doped section of the device. Means for the current path towards the contacts and for the heat dissipation from the gain medium are provided. Arrays of micro-devices can be fabricated on single wafer or mounted on single carrier. Devices with different cross-section of the micropillar emit light at different wavelengths. 1. A micropillar semiconductor optoelectronic device comprisingi) at least one cavity;ii) at least one multilayer interference reflector, a p-doped semiconductor section, and', 'a p-n junction sandwiched between said n-doped semiconductor section and said p-doped semiconductor section,, 'iii) an n-doped semiconductor section, and'}iv) a gain medium placed within said p-n junction, and 'further comprising at least one n-contact and at least one p-contact,', 'v) at least two electric contacts,'}wherein said at least one multilayer interference reflector represents a micropillar having lateral dimensions smaller than five micrometers;wherein said micropillar further comprises a sidewall;wherein at least one contact of said at least two contacts is placed on said sidewall of said micropillar overlapping with said at least one doped semiconductor section.2. The micropillar semiconductor optoelectronic device of claim 1 , wherein said aperture has an aperture area,', 'wherein said aperture is fabricated using a method selected from the group of the methods consisting of:', I) ...

VERTICAL-CAVITY SURFACE-EMITTING LASER WITH DENSE EPI-SIDE CONTACTS

An emitter may include a substrate, a conductive layer on at least a bottom surface of a trench, and a first metal layer to provide a first electrical contact of the emitter on an epitaxial side of the substrate. The first metal layer may be within the trench such that the first metal layer contacts the conductive layer within the trench. The emitter may further include a second metal layer to provide a second electrical contact of the emitter on the epitaxial side of the substrate, and an isolation implant to block lateral current flow between the first electrical contact and the second electrical contact. 1. An emitter , comprising:a substrate;a conductive layer on at least a bottom surface of a trench; 'wherein the first metal layer is within the trench such that the first metal layer contacts the conductive layer within the trench;', 'a first metal layer to provide a first electrical contact of the emitter on an epitaxial side of the substrate,'}a second metal layer to provide a second electrical contact of the emitter on the epitaxial side of the substrate; andan isolation implant to block lateral current flow between the first electrical contact and the second electrical contact.2. The emitter of claim 1 , wherein the isolation implant surrounds an aperture of the emitter and is between the aperture and an interior sidewall of the trench.3. The emitter of claim 1 , wherein a bottom of the trench is within a contact layer of the emitter.4. The emitter of claim 1 , wherein a width of the trench is less than or equal to approximately 10 microns.5. The emitter of claim 1 , wherein a width of the trench is smaller than a depth of the trench.6. The emitter of claim 1 , wherein a portion of the first metal layer contacts a portion of the second metal layer over an emission area of the emitter.7. The emitter of claim 1 , wherein the first metal layer is not present over an emission area of the emitter.8. The emitter of claim 1 , wherein the first electrical contact is ...

Increase VCSEL Power Using Multiple Gain Layers

System and method for increasing VCSEL power by using multiple gain layers 10, separated by insulated layers 12, bounded on top and bottom by DBR mirrors 11, connected in parallel through electrodes embedded within, resulting in a modified VCSEL system of higher power, lower resistive loss, higher device speed, and higher beam quality.

SURFACE EMITTING LASER LUMINESCENT DIODE STRUCTURE

The present invention is a surface emitting laser luminescent diode structure which is characterized in that a recess comprises two tilted slopes on two sides and a protruding trapezoidal cylinder located at the bottom center of the recess is disposed at the bottom of a laser resonant cavity. Thus, a reflecting mirror disposed along the surface of the recess includes two tilted side surfaces as leak-proof sides, which reduces the divergence angle and avoid the lateral light leakage. Additionally, a current isolating layer is disposed on the reflecting mirror and is designed to satisfy the condition (¼*wavelength*1/refractive index) of an optical film, thereby allowing the reflecting mirror to receive an excellent reflectance. Besides, the current isolating layer limits the flow direction of the current, thus increasing operating speed.

PASSIVATION OF VCSEL SIDEWALLS

A semiconductor structure configured for use in a VCSEL or RCLED. The semiconductor structure includes an oxidizing layer constructed from materials that can be oxidized during a lithographic process so as to create an oxide aperture. The semiconductor structure further includes a number of layers near the oxidizing layer. A passivation material is disposed on the layers near the oxidizing layer. The passivation material is configured to inhibit oxidation of the layers. 1. A semiconductor structure configured for use in an optical semiconductor device comprising:an oxidizing layer constructed from materials that can be oxidized during a process so as to create an oxide aperture; a thermal conduction layer disposed above the oxidizing layer,', 'a mirror above the thermal conduction layer, and', 'a stop etch layer disposed above the oxidizing layer and below the mirror; and, 'a plurality of layers near the oxidizing layer comprisinga passivation material disposed on the thermal conduction layer and the mirror, the passivation material configured to inhibit oxidation of the thermal conduction layer and the mirror.2. The semiconductor structure of claim 1 , wherein the passivation material is not disposed on the oxidizing layer allowing the oxidizing layer to be oxidized to form the oxide aperture in the oxidizing layer.3. The semiconductor structure of claim 1 , wherein the mirror comprises a DBR mirror.4. The semiconductor structure of claim 1 , wherein the plurality of layers above the oxidizing layer comprise one or more layers with a composition defined approximately by Al(x)Ga(1−x)As where x is approximately greater than 0.95.57-. (canceled)8. The semiconductor structure of claim 1 , wherein the passivation material is Silicon Nitride.9. The semiconductor structure of claim 1 , wherein the passivation material is Silicon Dioxide.1011-. (canceled)12. The semiconductor structure of claim 1 , wherein the thermal conduction layer is formed in an epitaxial structure.13 ...

VERTICAL CAVITY SURFACE EMITTING LASER DEVICE WITH INTEGRATED PHOTODIODE

A vertical cavity surface emitting laser includes four contacts and an optical resonator (having two Bragg reflectors, a photodiode, and an active layer between the Bragg reflectors). The second Bragg reflector has three parts. The first part has a pair of layers with different refractive indices and a second conductivity type. The second part has a pair of layers with different refractive indices and a first conductivity type. The third part has a pair of layers with different refractive indices and the second conductivity type. A light absorption structure of the photodiode is between the second and third parts. The first and second electrical contacts provide a current to pump the resonator. The light absorption structure is outside the current path. The third and fourth electrical contacts contact the photodiode. The second and third electrical contact respectively contact the first and second parts and are separated by a semiconductor layer. 1. A vertical cavity surface emitting laser device comprising:a first electrical contact;a third electrical contact;a fourth electrical contact; andan optical resonator, a first distributed Bragg reflector;', 'a photodiode;', 'a second distributed Bragg reflector; and', 'an active layer for light emission,, 'wherein the optical resonator compriseswherein the active layer is arranged between the first distributed Bragg reflector and the second distributed Bragg reflector,wherein the second distributed Bragg reflector comprises a first part, a second part, and a third part,wherein the first part comprises at least one first pair of layers with different refractive indices,wherein the at least one first pair of layers is of a second conductivity type, wherein the second part comprises at least one second pair of layers with different refractive indices,wherein the at least one second pair of layers is is of a first conductivity type different than the second conductivity type,wherein the third part comprises at least one third ...

Micro light emission element and image display device

Provided is a micro light emission element including a compound semiconductor in which an N-side layer, a light emission layer, and a P-side layer are laminated sequentially from a side of a light emitting surface, in which an N-electrode coupled to the N-side layer and a P-electrode coupled to the P-side layer are disposed on another surface opposite to the light emitting surface, the P-electrode is disposed on the light emission layer, the N-electrode is disposed in an isolation region which is a boundary region of the micro light emission element and isolates the light emission layer from a light emission layer of another micro light emission element, a surface of the N-electrode on a side of the other surface and a surface of the P-electrode on the side of the other surface are flush with each other, and the N-electrode and the P-electrode are both formed of a single interconnection layer.

Compound semiconductor and method for manufacturing same

A nitride compound semiconductor having a low resistivity that is conventionally difficult to be manufactured is provided. Since the nitride compound semiconductor exhibits a high electron mobility, a high-performance semiconductor device may be configured. The present invention may provide, at a high productivity, a group 13 nitride semiconductor of an n-type conductivity that may be formed as a film on a substrate having a large area size and has a mobility of 70 to 140 cm2/(V·s) by a pulsed sputtering method performed in a process atmosphere at room temperature to 700° C.

Light emitting device and method of manufacturing the same

A light emitting device, includes a selective growth mask layer 44 ; a first light reflection layer 41 thinner than the selective growth mask layer 44 ; a laminated structure including a first compound semiconductor layer 21 , an active layer 23 , and a second compound semiconductor layer 22 , the first compound semiconductor layer 21 being formed on the first light reflection layer 41 ; and a second electrode 32 formed on the second compound semiconductor layer 22 , and a second light reflection layer 42 , in which the second light reflection layer 42 is opposed to the first light reflection layer 41 , and the second light reflection layer is not formed on an upper side of the selective growth mask layer 44.

WIDELY TUNABLE SWEPT SOURCE

A high-speed, single-mode, high power, reliable and manufacturable wavelength-tunable light source operative to emit wavelength tunable radiation over a wavelength range contained in a wavelength span between about 950 nm and about 1150 nm, including a vertical cavity laser (VCL), the VCL having a gain region with at least one compressively strained quantum well containing Indium, Gallium, and Arsenic. 1. A wavelength-tunable light source operative to emit wavelength tunable radiation over a wavelength range contained in a wavelength span between about 950 nm and about 1150 nm , said wavelength tunable light source comprising a vertical cavity laser (VCL) , said VCL having a gain region with at least one compressively strained quantum well containing Indium , Gallium , and Arsenic , said vertical cavity laser further comprising a first portion including a first mirror , a second portion including a second mirror attached to a mechanical structure including a flexible membrane with a support structure , an adjustable airgap between said second portion and said first portion , a first means for electrical injection of electrons and holes into said gain region , said first means including a tunnel junction , a second means for adjusting said airgap , and a third means for obtaining substantially single longitudinal and transverse mode operation over said wavelength tuning range , wherein a peak room-temperature photoluminescence wavelength of said gain region is more than about 50 nm shorter than a maximum operating wavelength of said tunable laser.2. The wavelength tunable light source of claim 1 , further comprising a fourth means for constricting electrical current injection to an aperture.3. The wavelength tunable light source of claim 2 , wherein said fourth means comprises an oxidized aperture.4. The wavelength tunable light source of claim 2 , wherein said fourth means comprises a buried tunnel junction.5. The wavelength tunable light source of claim 1 , further ...

LED DBR STRUCTURE WITH REDUCED PHOTODEGRADATION

A distributed Bragg reflector (DBR) structure on a substrate includes a high refractive index layer comprising titanium oxide (TiO2) and a low refractive index layer having a high carbon region and at least one low carbon region that contacts the high refractive index layer. Multiple layers of the high refractive index layer and the low refractive index layer are stacked. Typically, the multiple layers of the high refractive index layer and the low refractive index layer are stacked to a thickness of less than 10 microns. Each of the respective layers of the high refractive index layer and the low refractive index layer have a thickness of less than 0.2 microns. 1. A DBR structure on a substrate , comprising:{'sub': '2', 'high refractive index layers each comprising titanium oxide (TiO); and'}low refractive index layers each having a high carbon region and at least one low carbon region that contacts at least one of the high refractive index layers.2. (canceled)3. The DBR structure of claim 1 , wherein the high refractive index layers and the low refractive index layers are stacked to a thickness of less than 10 microns.4. The DBR structure of claim 1 , wherein each of the respective layers of the high refractive index layers and the low refractive index layers have a thickness of less than 0.2 microns.5. The DBR structure of claim 1 , wherein each of the low refractive index layers further comprises at least one of AlOand SiO.6. The DBR structure of claim 1 , wherein the high carbon region of the low refractive index layers further comprises AlOformed from an organometallic precursor.7. The DBR structure of claim 1 , wherein the high carbon region of the low refractive index layers further comprises AlOformed from Trimethyl Aluminum.8. The DBR structure of claim 1 , wherein the low carbon region of the low refractive index layers further comprises AlOformed from a halide precursor.9. The DBR structure of claim 1 , wherein the low carbon region of the low refractive ...

LED DBR STRUCTURE WITH REDUCED PHOTODEGRADATION

A distributed Bragg reflector (DBR) structure on a substrate includes a high refractive index layer comprising titanium oxide (TiO2) and a low refractive index layer having a high carbon region and at least one low carbon region that contacts the high refractive index layer. Multiple layers of the high refractive index layer and the low refractive index layer are stacked. Typically, the multiple layers of the high refractive index layer and the low refractive index layer are stacked to a thickness of less than 10 microns. Each of the respective layers of the high refractive index layer and the low refractive index layer have a thickness of less than 0.2 microns. 1. A light emitting diode (LED) device comprising:a substrate;a semiconductor diode structure on the substrate and comprising a first light output surface oppositely positioned from the substrate; and [{'sub': '2', 'a high refractive index layer comprising titanium oxide (TiO); and'}, 'a low refractive index layer having a high carbon region and at least one low carbon region that contacts the high refractive index layer., 'a DBR structure on the substrate, the DBR structure comprising2. The LED device of claim 1 , further comprising a wavelength converting layer on the semiconductor diode structure comprising a second light output surface oppositely positioned from the first light output surface of the semiconductor diode structure.3. The LED device of claim 2 , further comprising sidewalls adjacent to the semiconductor structure and comprising the DBR structure claim 2 ,wherein the DBR structure is arranged to reflect light emitted by at least one of the semiconductor diode structure and the wavelength converting layer in a first direction away from the substrate.4. The LED device of claim 3 , wherein the substrate comprises a second DBR structure claim 3 , the second DBR structure comprising:{'sub': '2', 'a second high refractive index layer comprising titanium oxide (TiO); and'}a second low refractive ...

Surface emission type semiconductor laser, method and apparatus for producing the same

A surface emission type semiconductor laser has insulation layers (107, 108) embedding separation grooves for partially separating the waveguide path in an optical resonator formed by a pair of reflecting mirrors, namely a distributed reflection type multilayer film mirror (104) and a dielectric multilayer film mirror (111), and a quantum well active layer (105). A surface emission type semiconductor laser is designed such that the lasing wavelength λ G of an edge emission type semiconductor laser having the same semiconductor layers as those of the optical resonator is set to be shorter than a desired lasing wavelength λ EM of the surface emission type semiconductor laser by a given differential wavelength (gain offset) Δλ EM .

Surface-emitting laser diode having reduced device resistance and capable of performing high output operation, surface-emitting laser diode array, electrophotographic system, surface-emitting laser diode module, optical telecommunication system, optical interconnection system using the surface-emitting laser diode, and method of fabricating the surface-emitting laser diode

A surface-emitting laser diode device that oscillates in a direction perpendicular to the substrate is provided. This surface-emitting laser diode device includes: an active layer; a resonator structure including a first distributed Bragg reflector and a second distributed Bragg reflector that face each other and sandwich the active layer; a hole passage that extends from a first electrode to the active layer; an electron passage that extends from a second electrode to the active layer; a hole restricting structure that is located in the hole passage and defines a region for confining holes to the active layer; and an optical mode control structure that includes a non-oxide region provided in the resonator structure and an oxide region surrounding the non-oxide region, each region containing Al as a constituent element. In this surface-emitting laser diode, the area of the non-oxide region is smaller than the area of the hole restricting structure.

Diode laser

A diode laser includes a p-contact layer, a n-contact layer, and a wafer body disposed between the p-contact layer and the n-contact layer, the wafer body having a front end and a back end. The diode laser further includes a first grating comprising a plurality of grooves defined in the wafer body and extending between the front end and the back end at a first tilt angle, and a second grating comprising a plurality of grooves defined in the wafer body and extending between the front end and the back end at a second tilt angle, the second tilt angle opposite to the first tilt angle. A coupling region is defined in the wafer body by interleaving portions of the first grating and the second grating. The interleaving portions provide coherent coupling of laser beams flowing through the first grating and the second grating.

Surface emitting laser element, surface emitting laser array using the surface emitting laser element, electrophotographic system, surface emitting laser module, optical communication system, optical interconnection system, and surface emitting laser element manufacturing method

Vertical-cavity surface emitting laser

본 발명에 따른 면 발광 레이저는 기판 및 상기 기판 상에 성장된 제1 미러와, 상기 제1 미러 상에 성장되며 상기 제1 미러와 광을 공진시키는 제2 미러와, 상기 제1 및 제2 미러의 사이에 위치되며 상기 광을 생성 및 증폭시키는 활성층과, 상기 활성층 상에 성장되며 상기 활성층에 전류를 인가하는 상부 전극 및 상기 기판 상에 형성되며 상기 활성층에 전류를 인가하기 위한 하부 전극과, 상기 활성층 및 제2 미러가 매몰되게 상기 제1 미러 상에 형성된 평탄화용 폴리머와, 상기 상부 전극으로부터 상기 평탄화용 폴리머의 상부에 노출되게 수직 상향 연장된 제1 외부 단자 및 상기 하부 전극으로부터 상기 평탄화용 폴리머의 상부에 일면이 노출되게 연장된 제2 외부 단자를 포함한다. The surface-emitting laser according to the present invention includes a substrate and a first mirror grown on the substrate, a second mirror grown on the first mirror and resonating light with the first mirror, and the first and second mirrors. An active layer disposed between the active layer to generate and amplify the light, an upper electrode grown on the active layer to apply a current to the active layer, and a lower electrode formed on the substrate to apply current to the active layer; The planarizing polymer formed on the first mirror so that the active layer and the second mirror are buried, the first external terminal extending vertically upwardly to be exposed to the upper part of the planarizing polymer from the upper electrode, and the planarizing polymer from the lower electrode It includes a second external terminal extending to expose one surface on the top of. 면 발광 레이저, 공진, 반도체 Surface emitting laser, resonance, semiconductor

面発光レーザの製造方法

(57)【要約】 【課題】 実施が簡単で基板の組成の如何にかかわらず 適用することができる発振型半導体レーダの製造方法を 提供する。 【解決手段】 レーザの共振空洞を規定するミラー（Ｍ Ｓ、ＭＩ）の良好な電気閉じ込め性および良好な平面性 を確保するするために、 − アンダーカット層を成長させる段階と、 − アンダーカット層上で、少なくとも一回成長させる 段階と、 − アンダーカット層を露出させるメサを形成する段階 と、 − アンダーカット層の側面の制御エッチングを行う段 階とにより、電気閉じ込め層（ａ１、ａ２）を作製する ことから成る方法。ＩｎＰおよびＧａＡｓなどのＩＩＩ −Ｖ族基板上での半導体レーザの製造に適用される。

半導体素子

Surface emitting semiconductor laser, method for fabricating surface emitting semiconductor laser, module, light source apparatus, data processing apparatus, light sending apparatus, optical spatial transmission apparatus, and optical spatial transmission system

본 발명은 모드 제어를 효과적으로 행할 수 있는 VCSEL을 제공하는 것을 과제로 한다. An object of the present invention is to provide a VCSEL capable of effectively performing mode control. VCSEL(100)은 p형의 GaAs 기판(102)과, GaAs 기판(102) 상에 형성된 p형의 하부 DBR(106)과, 하부 DBR(106) 상에 형성되고, 광을 발생하는 활성층(112)과, 활성층(112) 상에 형성되고, 발진 파장의 광을 선택적으로 흡수 또는 반사하며, 레이저광의 모드를 제어하는 광 모드 제어층(120)과, 광 모드 제어층(120) 상에 형성된 상부 DBR(124)을 갖는다. The VCSEL 100 is formed on a p-type GaAs substrate 102, a p-type lower DBR 106 formed on the GaAs substrate 102, and an active layer 112 formed on the lower DBR 106 and generating light. And an optical mode control layer 120 formed on the active layer 112 and selectively absorbing or reflecting light having an oscillation wavelength and controlling the mode of the laser light, and an upper portion formed on the optical mode control layer 120. Has a DBR 124. VCSEL, DBR, 활성층, 광 모드 제어층 VCSEL, DBR, active layer, optical mode control layer

Vertical cavity surface emitting laser having multiple top-side contacts

本发明公开了一种具有未掺杂镜的VCSEL。在衬底上形成基本上未掺杂的底部DBR镜。在该底部DBR镜上形成周期性掺杂的第一传导层区。在光电场为约最小值处重度掺杂该第一传导层区。在第一传导层区上为包括量子阱的活性层。周期性掺杂的第二传导层区连接到该活性层。在光电场为最小值处重度掺杂该第二传导层区。在位于量子阱上方的外延结构中形成孔径。顶部镜连接到该周期性掺杂的第二传导层区。该顶部镜基本上未掺杂并且形成为台地结构。在该台地结构周围形成氧化物以在湿氧化工艺期间保护该顶部镜。

유전체 dbr을 갖는 인듐 인화물 vcsel

광전자 디바이스는, 기판의 구역 상에 배치되고 교번하는 제1 유전체 층 및 반도체 층을 포함하는 하위 분포 브래그 반사기(DBR) 스택(24)과 함께, 캐리어 기판(22)을 포함한다. 에피택셜 층들(26, 28, 30, 31, 34)의 세트가 하위 DBR 위에 배치되며, 여기서 에피택셜 층들의 세트는 하나 이상의 III-V족 반도체 재료들을 포함하고 양자 우물 구조(28) 및 구속 층(31)을 정의한다. 상위 DBR 스택(38)은 에피택셜 층들의 세트 위에 배치되고, 교번하는 제2 유전체 층 및 반도체 층을 포함한다. 전극들(40, 42)이 양자 우물 구조에 여자 전류를 인가하도록 커플링된다.

Quantum dot based optoelectronic device and method of making same

실리콘 기판 상에 광학 활성 영역을 형성하는 방법은 실리콘 기판 상에 실리콘 버퍼 층을 에피택셜 성장시키는 단계 및 복수의 양자 점 배열이 배치된 SiGe 클래딩 층을 에피택셜 성장시키는 단계를 포함하고, 양자 점은 실리콘 버퍼 층과 격자 부정합을 갖는 화합물 반도체 재료로 형성된다. 광학 활성 영역은 발광 다이오드, 레이저 다이오드 및 광검출기와 같은 소자에 포함될 수 있다. A method of forming an optically active region on a silicon substrate includes epitaxially growing a silicon buffer layer on the silicon substrate and epitaxially growing a SiGe cladding layer having a plurality of quantum dot arrays disposed thereon, the quantum dots being It is formed of a compound semiconductor material having lattice mismatch with the silicon buffer layer. Optically active regions can be included in devices such as light emitting diodes, laser diodes, and photodetectors. 광학 활성 영역(optically active region), 에피택셜 성장(epitaxially growing), SiGe 클래딩 층(cladding layer), InGaAs, 양자 점(quantum dots) Optically active region, epitaxially growing, SiGe cladding layer, InGaAs, quantum dots

Surface emitting type semiconductor laser

【課題】マルチモード型光ファイバ用の光源に適した表面発光型半導体レーザを提供する。 【解決手段】下部多層反射膜２と、活性領域３と、上部多層反射膜５とが積層された基板１と、上部多層反射膜５上に設けられ、且つ活性領域３で発生したレーザ光の出射領域を画定する第１の開口部９ａが形成された上部電極９と、上部電極９と下部多層反射膜２との間に設けられ、且つレーザ光の発光領域を画定する第２の開口部を有する光閉じ込め領域１２とを備え、第１の開口部９ａの径が第２の開口部の径よりも１乃至５ミクロン小さい。 【選択図】　　　図１

Vertical-cavity surface emitting laser assay display system

A visual display system is disclosed which utilizes one- and/or two-dimensional arrays of visible emitting vertical-cavity surface-emitting lasers (VCSELs) in order to provide a desired visual display within an observer's field of view. Sweep and subscanning techniques are employed, individually or in combination, to create a full M×N image from 1×L or K×L arrays of VCSELs, where M and N are multiple integers of K and L, respectively. Preferably, the VCSELs are contained within a display housing which may be attached to the head of the user by an attachment mechanism or may alternatively be hand held or mounted to a surface. The circular symmetry and low divergence of the emitted VCSEL radiation as well as the availability of multiple wavelengths, particularly, red, blue and green, allow high resolution monochrome or color images to be generated.

Surface emitting semiconductor laser and manufacture thereof

(57)【要約】 【課題】 イオン注入および選択酸化を用いながら、低 抵抗で低しきい電流を達成し、かつ製造工程が簡単な面 発光半導体レーザを提供する。 【解決手段】 ｎ形ＧａＡｓ基板１０１上に下部ミラー １０２を形成する。次に、浅いイオン注入を行い、電流 狭窄領域となるイオン注入領域１０８を形成する。その 後、ＳｉＯ 2 膜マスク１０９を形成し、ＳｉＯ 2 膜マスク １０９に覆われていない領域の上に活性領域１０４およ び上部ミラー１０５を含んだ積層構造を選択成長させ る。

Hybrid vertical cavity laser for photonics integrated circuit

광 집적 회로용 하이브리드 수직 공명 레이저가 개시된다. 개시된 수직 공명 레이저는 두개의 저 굴절률 층 사이에서 실리콘으로 이루어진 그레이팅 미러와, 상기 그레이팅 미러에 광학적으로 연결된 광 도파로와, 상기 저 굴절률 층 상에서 활성층을 포함하는 Ⅲ-Ⅴ족 반도체층과, 상기 반도체층 상의 상부 미러를 포함한다. 상기 그레이팅 미러는 상기 실리콘층에서, 서로 평행한 복수의 바 형상의 저 굴절률 물질부를 구비한다. 상기 저 굴절률 물질부는 그 폭 방향으로 서로 크기가 다른 적어도 두 개의 폭을 가진다.

Surface emission type semiconductor laser, manufacturing method thereof, film forming apparatus and etching apparatus (Surface emission type semiconductor laser, method and apparatus for producing the same)

표면 방출형 반도체 레이저는 반사 미러쌍 즉, 분포 반사형 다층막 미러(104) 및 유전체 다층막 미러(11)로 형성된 광 공진기내에서 도파 경로를 부분적으로 분리하는 분리 그루브들을 매립하는 절연층(107, 108) 및, 양자 우물 활성층(105)을 구비한다. 표면 방출형 반도체 레이저는 광 공진기와 동일한 반도체층을 갖는 에지 방출형 반도체 레이저의 레이저 출력 파장 λ G 이 표면 방출형 반도체 레이저의 소망의 레어저 출력 파장 λ EM 보다 소정의 차동 파장(이득 오프셋) △λ EM 만큼 더 작게 설정되도록 설계된다(제1도).

Optoelectronic device using a disabled tunnel junction for current confinement

An optoelectronic device such as a vertical cavity surface emitting laser (VCSEL) includes a tunnel junction that conducts a current of holes tunneling into an active region. Tunneling in a selected area of the tunnel junction is disabled to form a current blocking region that confines the current to desired regions. Tunneling can be disabled in the selected area using techniques including but not limited to implanting or diffusing dopants, disrupting crystal structure, or etching to remove part of the tunnel junction.

Surface emitting semiconductor laser and manufacturing method thereof

Organic micro-cavity laser

An organic micro-cavity lasers which can reduce an optical loss and derive the lasing by the electrical pumping is disclosed. The laser of the present invention has a bottom mirror layer formed on a substrate, a bottom electrode formed on the bottom mirror layer, an active layer formed on the bottom electrode, a top electrode formed on a peripheral portion of the active layer and a top mirror layer formed on the active layer except the peripheral portion. Therefore, the laser of the present invention can greatly reduce the optical loss since it has the bottom mirror layer, the active layer and the top mirror layer. Also, the injection of current can sufficiently accomplished because the top electrode having a ring shape is formed at the peripheral portion of the active layer so as to inject the current to the active layer.

DNA biosensor and methods for making and using the same

Disclosed herein are biosensors and methods for making and using the same. In one embodiment, the sensor for detecting an analyte comprises: a substrate, recognition elements specific for the analyte, an excitation source, a detector, a chamber located between the substrate and the excitation source and between the substrate and the detector, and an emission filter. The recognition elements are tethered to the substrate such that the recognition elements can be exposed to a sample. The excitation source is capable of emitting a first light having a first light peak intensity at a first wavelength, wherein the first light can excite a luminophore to emit a second light when the recognition elements interact with the analyte. The detector is capable of detecting the second light emitted by the luminophore. The emission filter is capable of filtering in a band gap that includes the first light peak intensity.

Surface type optical semiconductor device and method of manufacturing the same

Vertical cavity surface emitting laser with undoped top mirror

A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate. A doped bottom mirror is formed on the substrate. An active layer that includes quantum wells is formed on the bottom mirror. A periodically doped conduction layer is formed on the active layer. The periodically doped conduction layer is heavily doped at locations where the optical energy is at a minimum when the VCSEL is in operation. A current aperture is used between the conduction layer and the active region. An undoped top mirror is formed on the heavily doped conduction layer.

Vertical cavity surface emitting laser having multiple top-side contacts

A VCSEL with undoped mirrors. An essentially undoped bottom DBR mirror is formed on a substrate. A periodically doped first conduction layer region is formed on the bottom DBR mirror. The first conduction layer region is heavily doped at a location where the optical electric field is at about a minimum. An active layer, including quantum wells, is on the first conduction layer region. A periodically doped second conduction layer region is connected to the active layer. The second conduction layer region is heavily doped where the optical electric field is at a minimum. An aperture is formed in the epitaxial structure above the quantum wells. A top mirror coupled to the periodically doped second conduction layer region. The top mirror is essentially undoped and formed in a mesa structure. An oxide is formed around the mesa structure to protect the top mirror during wet oxidation processes.

Lens comprising at least one oxidized layer and method for forming same

A lens having at least one oxidized layer is provided. Numerous structures for the lens are discussed. Additionally, methods for manufacturing the lens are also discussed. The methods include: 1) variation in thickness of oxidizable layers; 2) variation in thickness of non-oxidizable layers; 3) variation in Al concentration of oxidizable layers; 4) variation in Al concentration of non-oxidizable layers; 5) variation in doping concentration of oxidizable layers; 6) use of interdiffusion between oxidizable and non-oxidizable; 7) local variation in ion implantation dose; and 8) variation in mesa diameter.

Pre-fusion oxidized and wafer-bonded vertical cavity laser

It was proposed to combine two successful VCL technologies, wafer fusion and selective oxidation, in a new way to form a long wavelength VCL. The Al(ga)As oxidation is performed via fusion channels before the actual wafer fusion step. By doing so, the structure combines the advantages of two different, successful long wavelength VCL structures; the double fused and the single fused, oxygen implanted VCL.

Lattice-relaxed verticle optical cavities

A monolithic long-wavelength vertical optical cavity device built up along a vertical direction. The device, when designed as a surface emitting laser, has a bottom Distributed Bragg Reflector (DBR), an active region consisting of active bulk medium or quantum wells, a current confinement layer next to the active layer, and a top DBR. The bottom DBR and the active region are lattice matched to the lattice defining material, while the top DBR is lattice relaxed. The design achieves high reflectivity, low absorption and diffraction loss. The design also ensures low production cost due to low precision requirement and wafer size production. The device can be used as a light detector when the active region is replaced by a spacer or a optical filter.