ЛАЗЕРНЫЙ ЭЛЕМЕНТ ПОВЕРХНОСТНОГО ИСПУСКАНИЯ, СПОСОБ ДЛЯ ИЗГОТОВЛЕНИЯ ЛАЗЕРНОГО ЭЛЕМЕНТА ПОВЕРХНОСТНОГО ИСПУСКАНИЯ И АТОМНЫЙ ОСЦИЛЛЯТОР

Лазерный элемент поверхностного испускания включает в себя полупроводниковую подложку и множество лазеров поверхностного испускания, сконфигурированных с возможностью испускания света со взаимно различными длинами волн. Каждый лазер поверхностного испускания включает в себя нижний брэгговский отражатель, обеспеченный на полупроводниковой подложке, резонатор, обеспеченный на нижнем брэгговском отражателе, верхний брэгговский отражатель, обеспеченный на резонаторе, и слой регулирования длины волны, обеспеченный внутри верхнего брэгговского отражателя или нижнего брэгговского отражателя. Слои регулирования длины волны, включенные в лазеры поверхностного испускания, имеют взаимно различные толщины, причем, по меньшей мере, один из слоев регулирования длины волны включает в себя слои регулирования, образованные из двух видов материалов, и числа слоев регулирования, включенных в слои регулирования длины волны, взаимно различаются. Технический результат заключается в возможности обеспечения регулирования ...

ОПТОЭЛЕКТРОННЫЕ УСТРОЙСТВА

Изобретение относится к интегральным оптоэлектронным устройствам, содержащим светоизлучающие полевые транзисторы. Описано оптоэлектронное устройство, содержащее светоизлучающий полевой транзистор (LEFET) с активным слоем из органического полупроводника и волноводом, сформированным в канале светоизлучающего полевого транзистора. Активный слой находится поверх волновода и истокового и стокового электродов. Гребень волновода содержит материал, имеющий более высокий показатель преломления, чем органический полупроводник. На светоизлучающий полевой транзистор подается смещение для управления положением рекомбинации носителей заряда противоположной полярности в канале, гребень выравнивается с положением рекомбинации, так что свет управляемо вводится в гребень волновода. Технический результат заключается в повышении эффективности ввода света в волновод. 5 н. и 25 з.п. ф-лы, 14 ил.

ТВЕРДОТЕЛЬНЫЙ ЛАЗЕРНЫЙ ПРИБОР С ОПТИЧЕСКОЙ НАКАЧКОЙ С САМОРЕГУЛИРУЮЩЕЙСЯ ОПТИКОЙ НАКАЧКИ И УЛУЧШЕННЫМ УСИЛЕНИЕМ

Изобретение относится к лазерной технике. Твердотельный лазерный прибор с оптической накачкой содержит лазерную среду в лазерном резонаторе. Резонатор образован первым зеркалом резонатора, расположенным с первой стороны лазерной среды, и вторым зеркалом резонатора, расположенным со второй стороны, противоположной первой стороне. Первое зеркало резонатора образовано из распределенного брэгговского отражателя, на котором расположена твердотельная лазерная среда. Первые и вторые зеркала резонатора выполнены и расположены с возможностью направлять лазерное излучение из резонатора по двум различным прямым путям через лазерную среду. Лазерный диод накачки выполнен и расположен с возможностью оптически накачивать упомянутую лазерную среду путем отражения излучения накачки на отражающем излучение накачки зеркале. Отражающее излучение накачки зеркало расположено на второй стороне и выполнено с возможностью отражать излучение накачки к лазерной среде. Отражающее излучение накачки зеркало и второе ...

ПОЛУПРОВОДНИКОВЫЙ ЛАЗЕР НАКЛОННЫМ РЕЗОНАТОРОМ (ППЛНР), И СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ

... 1. Полупроводниковый лазер, содержащий: а) нижний отражатель, б) верхний отражатель; и в) резонатор, расположенный между нижним отражателем и верхним отражателем, содержащий активную область, расположенную в указанном резонаторе; при этом резонатор и активная область выполнены с возможностью того, чтобы световое излучение распространялось в резонаторе в направлении, наклоненном и относительно перпендикуляра к поперечной плоскости, и относительно самой поперечной плоскости. 2. Полупроводниковый лазер по п. 1, который дополнительно содержит подложку под нижним отражателем. 3. Полупроводниковый лазер по п. 2, в котором а) активная область излучает свет под воздействием на нее инжекционного тока при приложении прямого смещения; и б) резонатор также содержит: i) первую ограничивающую область под активной областью; ii) вторую ограничивающую область над активной областью; iii) первую имеющую донорную примесь область растекания тока над подложкой и под первой ограничивающей областью; iv) первую ...

Anordnung zur optischen Verbindung

Oberflächen emittierender Vielfachhalbleiterlaser mit verteilter Rückkopplung und mit Talbot-Filterwirkung

Surface-emitting laser diode array and photodetector array

The LD array 100 includes a plurality of surface-emitting LDs 101a to 1011 each including a secondary diffraction grating 16. These LDs are radially arranged on a substrate 10 so that the diffraction gratings face a center point. The laser oscillation regions of the adjacent LDs are spaced apart so that the respective LDs are not affected by adjacent LDs and operate with high stability. When these LDs are oscillated with the same driving current, a high power laser light, comprising a plurality of laser emissions from the respective LDs and having the same phase and wavelength, is output stably in a prescribed direction. On the other hand, when the LDs are oscillated with different driving currents, a phase composite wave is output stably in a prescribed direction. The LDs may be DFB or DBR type including a primary diffraction grating. An array of photodetectors and a multi-wavelength optical communication system is also described. ...

Enhanced emission of light from organic light emitting diodes

Surface emitting optical devices

LIGHT DETECTION DEVICE WITH DIFFRACTION GRATING

SEMICONDUCTOR LIGHT-EMITTING DEVICE AND ITS MANUFACTURING METHOD

SURFACE-EMITTING LASER LIGHT SOURCE USING TWO-DIMENSIONAL PHOTONIC CRYSTAL

A surface-emitting laser light source for generating a linearly polarized laser beam having a single-peak beam profile where the intensity at and near the center is the highest. A two-dimensional photonic crystal where a vacancy (311 or 312) is made in a plate (31) and arranged in a tetragonal lattice is disposed on one side of an active layer (23). The planar shape (surface B) of the vacancies (311, 312) shown on the plan view on the emission side is smaller than the planar shape (surface C) on the active layer side. The position of the center of gravity of the planar shape of surface B is apart in the in-plane direction from that of the planer shape of surface C. With this, the symmetry in the plane of the two-dimensional photonic crystal is degraded, and a linearly-polarized single-peak laser beam can be generated.

GRATING COUPLED WAVEGUIDE LASER APPARATUS

PHOTONIC CHIP WITH FOLDING OF OPTICAL PATH AND INTEGRATED COLLIMATING STRUCTURE

LASER DEVICE AND METHOD OF MANUFACTURING SUCH A LASER DEVICE

L'invention concerne un dispositif laser (1) disposé dans et/ou sur silicium et à hétéro structure III-V comprenant ○ un milieu amplificateur (3) à hétérostructure III-V, et ○ un guide d'onde optique en arête (11), disposé en regard du milieu amplificateur (3) et comprenant un guide d'onde en ruban (15) doté d'une arête longitudinale (17), le guide d'onde optique en arête (11) étant disposé dans du silicium. Le guide d'onde optique en arête (11) est orienté de manière à ce qu'au moins un réseau de Bragg (19, 19a, 19b) est disposée sur la face (21) du guide d'onde en ruban (15) qui est proximale par rapport au milieu amplificateur (3) et en ce que l'arête (17) est disposée sur la face (23) du guide d'onde en ruban (15) qui est distale par rapport au milieu amplificateur (3).

Laser beam transmitting device e.g. quantum cascade laser, for multisource emitter, has optical cavity comprising adaptation zone that presents width at its junction with main cavity, and another width at its junction with extraction zone

L'invention a pour objet un dispositif d'émission (1) d'au moins un faisceau laser de longueur d'onde λ, à cavité optique semi-conductrice (100) qui comprend une zone active (30) selon un plan Oxy, une couche guidante supérieure (10) et inférieure (20), à mode TM. La cavité (100) comprend : - une première section (100a) dite cavité principale qui est la zone d'amplification de l'onde lumineuse destinée à laser et qui a la forme d'un ruban de largeur I1 et de longueur L1 avec I1 inférieure à 10.L1, avec une couche (50a) de métal disposée sur la couche guidante supérieure (10), - une deuxième section (100b) dite zone d'extraction qui est la zone d'émission du faisceau laser (2) à travers la couche guidante inférieure, qui a une largeur I2 et une longueur L2 avec I2 et L2 supérieure à 10 x λ/neff, neff étant l'indice de réfraction effectif de cette deuxième section pour cette longueur d'onde, et avec sur la couche guidante supérieure (10b), un réseau (50b) continument composé d'un métal, ce ...

High-Efficiency Oxidized VCSEL with high-doping area and Manufacturing Method Thereof

ENHANCED EMISSION OF LIGHT FROM ORGANIC LIGHT EMITTING DIODES

A device comprising an organic light emitting diode coupled to a cavity, said cavity containing an emitting species, said device being arranged such that light emitted from said organic light emitting diode is at least partially absorbed by the emitting species and re-emitted from the emitting species. The device may be arranged such that the emitting species acts as the gain media of a laser, and the organic light emitting diode may be arranged to pump the emitting species. Also provided is method of generating light, said method comprising: coupling an organic light emitting diode to a cavity, said cavity containing an emitting species, said organic light emitting diode and said cavity being arranged such that light emitted from said organic light emitting diode is at least partially absorbed by the emitting species; operating said organic light emitting diode to emit light which is at least partially absorbed by the emitting species; and re-emitting light from the emitting species.

HIGH DENSITY LASER OPTICS

Apparatuses and methods for high density laser optics are provided. An example, of a laser optics apparatus includes a plurality of vertical cavity surface emitting lasers (VCSELs) in a monolithically integrated array, a high contrast grating (HCG) integrated with an aperture of a vertical cavity of each of the plurality of the VCSELs to enable emission of a single lasing wavelength of a plurality of lasing wavelengths, and a plurality of single mode waveguides, each integrated with a grating coupler, that are connected to each of the plurality of the integrated VCSELs and the HCGs, where each of the grating couplers is aligned to an integrated VCSEL and HCG.

Voltage tunable coherent light source

The disclosed source of coherent radiation is of the type adapted to provide an inversion layer of electrons. The preferred embodiment comprises a grated MOSFET having gallium arsenide or indium antimonide substrate so as to provide a source which is (1) operable at room temperatures, and (2) self-exciting in response to predetermined, substantially constant DC current levels of gate voltage and source-drain voltage.

Authorizing the use of a biometric card

Embodiments of the present invention provide a system and method for authorizing the use of a biometric transaction card. Specifically, embodiments of the present invention provide a biometric card having a biometric sensor to determine whether the biometric information (fingerprint) is from human skin. In a typical embodiment, the cardholder approaches a magnetic reader with the card. The user places his/her finger on the SpO2 sensor of the card. The sensor estimates the SpO2 level. Card authorization is based, in part, on the estimated SpO2 level.

Vertical cavity surface emitting laser device, vertical cavity surface emitting laser array, optical scanning apparatus, image forming apparatus, optical transmission module and optical transmission system

A disclosed vertical cavity surface emitting laser device emits light orthogonally in relation to a substrate and includes a resonator structure including an active layer; and semiconductor multilayer reflectors disposed in such a manner as to sandwich the resonator structure between them and including a confinement structure which confines an injected current and transverse modes of oscillation light at the same time. The confinement structure has an oxidized region which surrounds a current passage region. The oxidized region is formed by oxidizing a part of a selective oxidation layer which includes aluminum and includes at least an oxide. The selective oxidation layer is at least 25 nm in thickness. The semiconductor multilayer reflectors include an optical confinement reducing section which reduces optical confinement in a transverse direction. The optical confinement reducing section is disposed on the substrate side in relation to the resonator structure.

High density laser optics

Apparatuses and methods for high density laser optics are provided. An example, of a laser optics apparatus includes a plurality of vertical cavity surface emitting lasers (VCSELs) in a monolithically integrated array, a high contrast grating (HCG) integrated with an aperture of a vertical cavity of each of the plurality of the VCSELs to enable emission of a single lasing wavelength of a plurality of lasing wavelengths, and a plurality of single mode waveguides, each integrated with a grating coupler, that are connected to each of the plurality of the integrated VCSELs and the HCGs, where each of the grating couplers is aligned to an integrated VCSEL and HCG.

GALLIUM NITRIDE CROSS-GAP LIGHT EMITTERS BASED ON UNIPOLAR-DOPED TUNNELING STRUCTURES

Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization. 1. A solid-state device , comprising:a bottom n-type layer;a top n-type layer;a middle layer inserted between the top layer and bottom layer, where the middle layer comprises at least two materials provided between the top and bottom layers which serve as heterojunction tunnel barriers;and where the top layer and the middle layer form an interband tunnel barrier to generate holes by Zener tunneling across the potential barrier of the forbidden energy gap, and where the middle layer forms at least one intraband tunnel barrier to control electron flow.2. The device of claim 1 , wherein the top claim 1 , middle and bottom layers are comprised of gallium nitride claim 1 , aluminum nitride claim 1 , indium nitride or alloys and combinations of III-nitride semiconductors or III-nitride compatible semiconductors.3. The device of claim 2 , wherein the heterojunction interband tunnel barrier is formed by the polarization effects at III-nitride heterojunctions.4. The device of claim 1 , wherein the middle layer forms at least two intraband tunnel barriers claim 1 , wherein the at least two intraband tunnel barriers form a quantum well within the middle layer.5. The device of claim 1 , wherein the middle layer forms at least two intraband tunnel barriers claim 1 , wherein the at least two intraband tunnel barriers form a double barrier resonant tunneling diode.6. The device of claim 1 , wherein the middle layer is either undoped or doped less than the top ...

Optical device and system having thermal buffers

A vertical-cavity surface-emitting laser (VCSEL) device includes a first distributed Bragg reflector (DBR) structure of a first conductivity type, and a second DBR structure of a second conductivity type. The second conductivity type is different than the first conductivity type. The VCSEL includes a cavity positioned between the first DBR structure and the second DBR structure. The cavity includes at least one quantum well structure to generate light. The VCSEL includes a first thermal buffer layer positioned between the cavity and the first DBR structure, and a second thermal buffer positioned between the cavity and the second DBR structure.

Surface emitting laser, atomic oscillator, and manufacturing method of surface emitting laser

A surface emitting laser includes: a substrate; and a laminated body disposed over the substrate, wherein the laminated body includes a first mirror layer disposed over the substrate, an active layer disposed over the first mirror layer, and a second mirror layer disposed over the active layer, and surface roughness Ra of an uppermost layer of the first mirror layer is greater than or equal to 0.45 nm and less than or equal to 1.0 nm.

Low capacitance optoelectronic device

An optoelectronic semiconductor device is disclosed wherein the device is a vertical-cavity surface-emitting laser or a photodiode containing a section, the top part of which is electrically isolated from the rest of the device. The electric isolation can be realized by etching a set of holes and selective oxidation of AlGaAs layer or layers such that the oxide forms a continuous layer or layers everywhere beneath the top surface of this section. Alternatively, a device can be grown epitaxially on a semi-insulating substrate, and a round trench around a section of the device can be etched down to the semi-insulating substrate thus isolating this section electrically from the rest of the device. Then if top contact pads are deposited on top of the electrically isolated section, the pads have a low capacitance, and a pad capacitance below two hundred femto-Farads, and the total capacitance of the device below three hundred femto-Farads can be reached.

Optical modulator system

A modulation technique for optical signals. A laser diode having an outcoupling grating in the waveguide between two reflectors is provided. A second waveguide is positioned next to the first waveguide. The first end of the second waveguide is optically connected to the first waveguide on one side of the outcoupling grating, while the second end of the second waveguide is optically connected to the first waveguide on the other side of the outcoupling grating. Switches are provided that control the amount of light coupled between the waveguides. For example, when the switches are in a first state, no light is coupled between the two waveguides, and all the light stays in the laser diode or is coupled out of the outcoupling grating, while none of the light couples into the second grating; and when the switches are in a second state, some or all of the light from the first waveguide is coupled into the second waveguide. By toggling the states of the switches, the light emitted from the laser ...

SURFACE EMITTING LASER DIODE

A surface emitting laser diode includes: a semiconductor substrate; a first semiconductor layer of a first conductivity type on the semiconductor substrate; an active layer on the first semiconductor layer; a second semiconductor layer of a second conductivity type on the active layer; and a second order diffraction grating in one of the first semiconductor layer and the second semiconductor layer. The second order diffraction grating has a pattern which includes concentric circles, a spiral, or polygons. An active region including the first semiconductor layer, the active layer, and the second semiconductor layer, is circular or polygonal.

TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICES AND INTEGRATED PHOTONICS SYSTEM

Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser. 1. A strained semiconductor structure , comprising a plurality of discrete group IV semiconductor pillars formed in a layer of group IV semiconductor separated from an underlying silicon wafer by a buried insulating layer and surrounded in a plane of the layer of group IV semiconductor by a layer of tensile strained silicon nitride such that the pillars are isolated from one another laterally but are not isolated from an underlying portion of the layer of group IV semiconductor so that adjacent ones of the group IV semiconductor pillars share a common underlying group IV semiconductor layer , each respective one of the pillars having a portion of the respective pillar with biaxial tensile strain induced parallel to the plane of the group IV semiconductor layer , and the discrete group IV semiconductor pillars being positioned at locations of a resonant cavity at intervals that allow light amplification in the cavity.2. The strained semiconductor structure of claim 1 , wherein the portion of each respective pillar with biaxial tensile strain induced parallel to the plane of the group IV semiconductor layer has a direct bandgap of the group IV semiconductor smaller than an indirect bandgap of the group IV semiconductor.3. The strained semiconductor structure of claim 1 , wherein the resonant cavity comprises a light emitting device.4. The strained semiconductor structure of claim 3 , wherein the resonant cavity comprises a ...

Wavelength-tunable light source

A wavelength-tunable light source (1) includes an emitting section (3) that emits light having a plurality of single wavelengths on a substrate (2). Surface-emitting lasers (4a-d) are arranged in close proximity to each other on the substrate in the emitting section. The number of surface-emitting lasers corresponds to the number of wavelengths to be emitted. The light with the wavelengths emitted from the respective surface-emitting lasers is incident on a medium at substantially the same position.

Optical interconnection apparatus

Disclosed is apparatus, exemplarily an electronic switching machine, that comprises novel and advantageous optical interconnection means. In particular, the apparatus comprises one or more digital electronic gates, and the output of the gate or gates is applied, without intervening amplification, to a semiconductor laser whose radiation output is responsive to the applied electrical signal. The laser exemplarily is a quantum well laser comprising at least one gain section and at least one loss section. The electrical output of the gate or gates is connected to the at least one loss section. Due to the ability of such lasers to be switched by means of a relatively very small current through the loss section, conventionally used drive amplifiers are not required in apparatus according to the invention, resulting in significantly reduced complexity and cost. ...

Light detecting apparatus having a diffraction grating

A light detector provides wavelength tracking, monitoring or similar function by forming a diffraction grating in a light waveguide (4). Diffracted light from the waveguide is received by a light detecting device (11) having multiple detecting portions (PD1,...). Changes in the emission angle of the diffracted light caused by the wavelength or other fluctuation of the incident light are detected. The detected information can be used for wavelength tracking by injecting current into or applying a voltage to the waveguide to regulate the Bragg wavelength of the light waveguide, for monitoring and/or controlling the oscillation wavelength of a semiconductor laser or for other purposes. ...

OPTICAI INTEGRATED CIRCUIT

PURPOSE: To externally condense the oscillated light of a semiconductor laser through a waveguide by a second diffraction grating thereby to oscillate it in a single vertical mode to perform a stable operation of single condensed spot by integrating the laser having a first diffraction grating and a two-dimensional optical wave guide having the second diffraction grating on a semiconductor substrate. CONSTITUTION: An optical integrated circuit has an n-type GaAs substrate 11, an n-type AlGaAs clad layer 12, a first diffraction grating 13, an n-type AlGaAs optical wave guide 14, an n-type GaAs active layer 15, a p-type AlGaAs clad layer 16, a P+ type GaAs cap layer 17, a second diffraction grating 19, and an AlGaAs two-dimensional optical wave guide 20. The grating 19 is formed concentrically at the emitting end of a laser 18 as a center, and a pitch is increased toward the center. The laser light of a single vertical mode irradiated from the laser 18 is conducted through the optical wave ...

VCSEL С ВНУТРИРЕЗОНАТОРНЫМИ КОНТАКТАМИ

Использование: для создания лазерного устройства с высокой эффективностью преобразования мощности. Сущность изобретения заключается в том, что лазерное устройство образовано по меньшей мере одним поверхностно-излучающим лазером с вертикальным резонатором с внутрирезонаторными контактами, причем упомянутый поверхностно-излучающий лазер с вертикальным резонатором содержит эпитаксиальную слоистую структуру с активной областью между первым распределенным брэгговским отражателем и вторым распределенным брэгговским отражателем, первым слоем токовой инжекции первого типа проводимости между первым распределенным брэгговским отражателем и активной областью и вторым слоем токовой инжекции второго типа проводимости между вторым распределенным брэгговским отражателем и активной областью, и при этом дополнительно содержит токовую апертуру, причем упомянутые первый и второй слои токовой инжекции находятся в контакте с первым и вторым металлическими контактами соответственно, в котором упомянутые первый ...

ЛАЗЕР С ВЕРТИКАЛЬНЫМ РЕЗОНАТОРОМ И ПОВЕРХНОСТНЫМ ИЗЛУЧЕНИЕМ

Изобретение относится к лазерной технике. Лазер с вертикальным резонатором и поверхностным излучением (VCSEL) содержит первый электрический контакт, подложку, первый распределенный брэгговский отражатель, активный слой, распределенный биполярный фототранзистор на гетеропереходах, второй распределенный брэгговский отражатель и второй электрический контакт. Распределенный биполярный фототранзистор на гетеропереходах содержит коллекторный слой, светочувствительный слой, базовый слой и эмиттерный слой. Причем распределенный биполярный фототранзистор на гетеропереходах выполнен так, что между активным слоем и распределенным биполярным фототранзистором на гетеропереходах существует оптическая связь для обеспечения удержания активных носителей посредством распределенного биполярного фототранзистора на гетеропереходах так, что оптическая мода лазера с вертикальным резонатором и поверхностным излучением является самоустанавливающейся в соответствии с удержанием активных носителей во время функционирования ...

ТВЕРДОТЕЛЬНЫЙ ЛАЗЕРНЫЙ ПРИБОР С ОПТИЧЕСКОЙ НАКАЧКОЙ С САМОРЕГУЛИРУЮЩЕЙСЯ ОПТИКОЙ НАКАЧКИ И УЛУЧШЕННЫМ УСИЛЕНИЕМ

ОПТОЭЛЕКТРОННЫЕ УСТРОЙСТВА

... 1. Оптоэлектронное устройство, содержащее светоизлучающий полевой транзистор (LEFET) с активным слоем из органического полупроводника и волноводом, сформированным в канале светоизлучающего полевого транзистора, в котором волновод содержит материал, имеющий более высокий показатель преломления, чем органический полупроводник.2. Оптоэлектронное устройство по п.1, в котором напряжения, подаваемые на LEFET, выбираются так, чтобы зона рекомбинации LEFET располагалась, по меньшей мере, частично поверх волновода для обеспечения эффективного ввода света в волновод.3. Оптоэлектронное устройство по п.1, в котором волновод также содержит структуру оптической обратной связи для изменения пропускания света, распространяющегося в волноводе.4. Оптоэлектронное устройство по п.3, в котором структура оптической обратной связи является структурой распределенной обратной связи.5. Оптоэлектронное устройство по п.3, в котором оптоэлектронное устройство является лазерным устройством.6. Оптоэлектронное устройство ...

Scheibenförmiger Mikroresonator mit Gitter zur Auskopplung

Oberflächenemittierender Laser mit externem vertikalem Resonator (VECSEL) und mit stromführender Struktur

OBERFLÄCHENEMITTIERENDER LASER MIT VERTEILTER RÜCKKOPPLUNG UND GEKRÜMMTEM GITTER

Anordnung zur optischen Verbindung

Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers

Laser device and method for its operation

Surface emitting laser

PRODUCTION OF SEMICONDUCTOR COMPONENTS

INJECTION LASER

BEAM COLUMNATION USING MULTIPLE COUPLED ELEMENTS

SEMICONDUCTOR LASER WITH TRANSVERSE EMISSION, AND COUPLING THEREOF TO AN OPTICAL WAVEGUIDE

SEMICONDUCTOR LASER WITH TRANSVERSE EMISSION, AND COUPLING THEREOF TO AN OPTICAL WAVEGUIDE A semiconductor laser has, on the surface of layer adjacent the active layer, a grating with such a period as to reflect light in a direction transverse to the active layer; in this way light is emitted from a face parallel to the layer. The laser can be coupled to an optical waveguide realized in a substrate on which the laser can be fixed and which is provided with a grating capable of rotating the radiation emitted by the laser by the angle necessary for transferring the radiation into the waveguide.

Feedback and coupling structures and methods

Common cathode laser driving circuit

DISTRIBUTED-FEEDBACK SEMICONDUCTOR LASER

SURFACE EMITTING LASER LIGHT SIGNAL SYSTEM COMBINED

METHOD FOR MANUFACTURING AN OPTOELECTRONIC DEVICE FOR EMITTING INFRARED LIGHT COMPRISING AN ACTIVE LAYER BASED ON GESN

SEMICONDUCTOR DEVICES DETECTING VOLTAGE STRESS AND EMISSION PHOTONIC INTEGRATED PHOTONIC AND SYSTEM

LASER HAS EMISSION OF SURFACE HAS LIGHT SIGNALS COMBINE

SEMICONDUCTOR DEVICES DETECTING VOLTAGE STRESS AND EMISSION PHOTONIC INTEGRATED PHOTONIC AND SYSTEM

INTEGRATED OPTOELECTRONIC DEVICE INCLUDING MACH-ZEHNDER MODULATOR AND VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL)

A Mach-Zehnder modulator (MZM) is horizontally integrated with a VCSEL. The horizontally-integrated MZM overcomes wavelength dependence problems of horizontally-integrated EA modulators and yet has the same advantages as the horizontally-integrated EA modulators in terms of overcoming ER and modulation range problems associated with vertically-integrated EA and EO modulators. By overcoming the problems by the existing integrated modulators, the operation speed of the VCSEL is increased and a modulation signal range is extended to allow a wider range of modulation signals and modulation schemes, including large-signal digital modulation schemes. COPYRIGHT KIPO 2016 (AA) Upper DBR (BB) Modulator QW (CC) Lower DBR ...

DIODLASER MED UTGANGSKOPPLING MEDELST I STRUKTUREN INTEGRERAT GITTER

Light detecting apparatus having a diffraction grating

A light detector provides wavelength tracking, monitoring or similar function by forming a diffraction grating in a light waveguide. Diffracted light from the waveguide is received by a light detecting device having multiple detecting portions. Changes in the emission angle of the diffracted light caused by the wavelength or other fluctuation of the incident light are detected. The detected information can be used for wavelength tracking by injecting current into or applying a voltage to the waveguide to regulate the Bragg wavelength of the light waveguide, for monitoring and/or controlling the oscillation wavelength of a semiconductor laser or for other purposes.

Two-dimensional photonic crystal surface-emitting laser

A two-dimensional photonic crystal surface emitting laser has a laminated structure including: a two-dimensional photonic crystal (2DPC) layer in which refractive index distribution is formed by two-dimensionally arranging air holes in a plate-shaped base member; and an active layer for generating light with wavelength λL by receiving an injection of electric current. The two-dimensional photonic crystal surface emitting laser emits a laser beam in the direction of an inclination angle θ from normal to the 2DPC layer.

Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate

A structure using integrated optical elements is comprised of a substrate, a buffer layer grown on the substrate, one or more patterned layers formed on the buffer layer and one or more active layers formed on or between the patterned layers, for instance by Lateral Epitaxial Overgrowth (LEO), and including one or more light emitting species. The patterned layer comprises a mask (made of insulating, semiconducting or metallic material) and material filling holes in the mask. The patterned layer, due to a large index difference with the active layer and/or variations of a refractive index between the mask and materials filling holes in the mask, acts as an optical confinement layer, a mirror, a diffraction grating, a wavelength selective element, a beam shaping element or a beam directing element.

Laser device

In a laser device, a different refractive index region 6B of a photonic crystal layer is arranged at a lattice point position of a square lattice. In the case where a plane shape of the different refractive index regions 6B is a nearly isosceles right triangle, two sides forming a right angle extend along longitudinal and horizontal lateral lines of the square lattice. A direction parallel to or vertical to an oblique side of the triangle and a direction of polarization in the periodic polarization inversion structure of a nonlinear optical crystal NL are the same.

Surface emitting laser array and production method therefor

A surface emitting laser array having a plurality of surface emitting lasers arranged in an array, each of the surface emitting lasers being provided with a two-dimensional photonic crystal having a resonance mode in an in-plane direction and with an active layer. The surface emitting laser has a mesa-shaped inclined side wall surface. When a maximum light-receiving angle with respect to the mesa-shaped inclined side wall surface at which an incident light is coupled with a waveguide containing the two-dimensional photonic crystal is denoted as max°, an angle formed by a plane of the two-dimensional photonic crystal and the mesa-shaped inclined side wall surface is controlled so as to exceed (90+max)° or be smaller than (90max)°.

ATOMIC OSCILLATOR

An atomic oscillator includes: a gas cell sealing alkali metal atoms; a light source emitting light to the gas cell; and a light detection unit detecting a light amount of light transmitted through the gas cell, in which the light source includes a substrate, a first mirror layer disposed on an upper portion of the substrate, an active layer disposed on an upper portion of the first mirror layer, a second mirror layer disposed on an upper portion of the active layer, a first contact layer disposed on an upper portion of the second mirror layer, a light absorption layer disposed on an upper portion of the first contact layer, and a second contact layer disposed on an upper portion of the light absorption layer. 1. An atomic oscillator , comprising:a gas cell sealing alkali metal atoms;a light source emitting light to the gas cell; anda light detection unit detecting a light amount of light transmitted through the gas cell, a substrate,', 'a first mirror layer disposed on an upper portion of the substrate,', 'an active layer disposed on an upper portion of the first mirror layer,', 'a second mirror layer disposed on an upper portion of the active layer,', 'a first contact layer disposed on an upper portion of the second mirror layer,', 'a light absorption layer disposed on an upper portion of the first contact layer, and', 'a second contact layer disposed on an upper portion of the light absorption layer., 'wherein the light source includes'}2. The atomic oscillator according to claim 1 ,wherein a heat insulating layer having thermal conductivity lower than that of the second mirror layer is provided between the second mirror layer and the first contact layer.3. The atomic oscillator according to claim 2 ,wherein an area of the heat insulating layer is smaller than an area of the first contact layer when seen from a lamination direction of the active layer and the first mirror layer.4. The atomic oscillator according to claim 3 ,wherein a layer having thermal ...

METHOD AND SYSTEM FOR A LIGHT SOURCE ASSEMBLY SUPPORTING DIRECT COUPLING TO AN INTEGRATED CIRCUIT

Methods and systems for a light source assembly supporting direct coupling to a photonically enabled complementary metal-oxide semiconductor (CMOS) chip are disclosed. The assembly may include a laser, a microlens, a turning mirror, reciprocal and/or non-reciprocal polarization rotators, and an optical bench. The laser may generate an optical signal that may be focused utilizing the microlens. The optical signal may be reflected at an angle defined by the turning mirror, and may be transmitted out of the light source assembly to one or more grating couplers in the chip. The laser may include a feedback insensitive laser. The light source assembly may include two electro-thermal interfaces between the optical bench, the laser, and a lid affixed to the optical bench. The turning mirror may be integrated in a lid affixed to the optical bench or may be integrated in the optical bench.

Coupled resonant cavity surface-emitting laser

The CRCSEL comprises a single-mode optical gain structure and an optically-resonant cavity. The single-mode optical gain structure is structured to generate excitation light having a wavelength and a direction. The optically-resonant cavity is optically coupled to the single-mode optical gain structure and is structured to emit an output light beam in a direction substantially orthogonal to the excitation light. The change in light direction provided by the optically-resonant cavity enables the output light beam to emit from a surface while allowing the excitation light to be generated in a large, high-gain single-mode optical gain structure.

Silicon quantum dot laser

Dynamic variation in the color produced by a silicon quantum dot laser is achieved by utilizing segmented sections or patches of quantum dots of differing sizes to produce different colors of light. The amount of each color of light produced is controlled by selectively biasing the segments of quantum dots. The light is caused to resonate coherently and is emitted out by a diffraction grating. The dynamic variation in the color of light produced by such a device makes it useful as a multicolor pixel in a color display of images.

Increasing the yield of precise wavelength lasers

A wafer supporting a semiconductor structure having a material gain function that would preferentially support an F-P laser mode at an unwanted wavelength lambd2 is provided with a second order dielectric grating located sufficiently remotely from the high intensity optical field of the quantum well and the waveguide to receive just enough transverse mode energy to provide feedback to reduce the gain at lambd2 and support oscillation at a desired wavelength lambd1. More particularly, by providing a gain discrimination factor alpha0.1 cm-1, the fraction of power lost to transverse mode radiation can be held to about 1% which is sufficient to provide stabilizing feedback without sapping too much energy from the longitudinal beam.

Scalable fast tunable Si-assisted hybrid laser with redundancy

The disclosed embodiments provide a tunable laser that includes a set of M reflective silicon optical amplifiers (RSOAs) and a set of N narrow-band reflectors. It also includes a silicon-photonic optical switch, having M amplifier ports, which are coupled through a set of M optical waveguides to the set of M RSOAs, and N reflector ports, which are coupled to the set of N narrow-band reflectors. The tunable laser also includes a switching mechanism that facilitates coupling at least one selected amplifier port from the M amplifier ports with a selected reflector port from the N reflector ports, thereby causing an RSOA coupled to the selected amplifier port to form a lasing cavity with a narrow-band reflector coupled to the selected reflector port. The tunable laser also includes a laser output, which is optically coupled to the lasing cavity.

Resonant cavity strained Group III-V photodetector and LED on silicon substrate and method to fabricate same

A structure includes an optoelectronic device having a Group IV substrate (e.g., Si); a buffer layer (e.g. SiGe) disposed on the substrate and a first distributed Bragg reflector (DBR) disposed on the buffer layer. The first DBR contains alternating layers of doped Group IV materials (e.g., alternating layers of SiyGe(1-y), where 0.8 Подробнее

Creating arbitrary patterns on a 2-D uniform grid VCSEL array

An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate

A structure using integrated optical elements is comprised of a substrate, a buffer layer grown on the substrate, one or more patterned layers formed on the buffer layer and one or more active layers formed on or between the patterned layers, for instance by Lateral Epitaxial Overgrowth (LEO), and including one or more light emitting species. The patterned layer comprises a mask (made of insulating, semiconducting or metallic material) and material filling holes in the mask. The patterned layer, due to a large index difference with the active layer and/or variations of a refractive index between the mask and materials filling holes in the mask, acts as an optical confinement layer, a mirror, a diffraction grating, a wavelength selective element, a beam shaping element or a beam directing element.

Two-dimensional photonic crystal surface-emitting laser

A two-dimensional photonic crystal formed by arranging in a lattice pattern a medium having a refractive index different from that of a medium layer formed near an active layer. The two-dimensional photonic crystal includes a distributed-feedback control photonic crystal in which a light propagating through the active layer as a core is subjected to a two-dimensional distributed feedback within a plane of the active layer, and the light is not radiated in a direction normal to the plane of the active layer, and a surface-emission control photonic crystal in which the light is radiated in the direction normal to the plane of the active layer, which are superimposed with each other.

Semiconductor laser

A master oscillator, vertical emission (MOVE) laser (300) includes an oscillator (301), a coupling region (306), and vertical-cavity amplifier region (304) formed on a common substrate (305). The coupling region (306) may include separately defined expansion (302) and grating (303) regions. Single-mode radiation of the oscillator (301) passes through the expansion region (302), which is a passive region that provides spatial expansion of the propagating single-mode radiation wavefront with little or no gain. The expanded single-mode radiation from the expansion region passes through the grating region (303), which provides coupling of the relatively broad wavefront from the expansion region into the cavity of the vertical-cavity amplifier. The expansion and grating regions may be configured to reduce or eliminate reflection of single-mode radiation propagating within the vertical-cavity amplifier back toward the oscillator. The cavity of the vertical-cavity amplifier (304) is relatively ...

ИЗЛУЧАЮЩЕЕ ВИДИМЫЙ СВЕТ ПОЛУПРОВОДНИКОВОЕ ЛАЗЕРНОЕ УСТРОЙСТВО И СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ

Настоящее изобретение относится к лазерной технике. Излучающее видимый свет полупроводниковое лазерное устройство содержит по меньшей мере один лазер поверхностного излучения с вертикальным резонатором (VCSEL), излучающий в инфракрасном (ИК) диапазоне спектра и интегрированный с преобразователем ИК излучения в видимый свет. При этом каждый VCSEL содержит: полупроводниковую подложку; слой нижнего распределенного брэгговского отражателя, расположенный на полупроводниковой подложке; полупроводниковый контактный слой первого типа проводимости, расположенный на слое нижнего распределенного брэгговского отражателя; первую контактную площадку, расположенную на участке полупроводникового контактного слоя первого типа проводимости; слой активной области, расположенный на полупроводниковом контактном слое первого типа проводимости; полупроводниковый контактный слой второго типа проводимости, расположенный на слое активной области; вторую контактную площадку, расположенную на участке полупроводникового ...

Halbleitervorrichtung und Herstellungsverfahren

Lichtemittierende Halbleitervorrichtung und Verfahren zur Herstellung derselben

Die Ausführungsform betrifft eine lichtemittierende Halbleitervorrichtung, die in der Lage ist, Rauschlicht zu reduzieren, das einen gitterförmigen dunklen Abschnitt aufweist, der ein Strahlenmuster überlagert. Die lichtemittierende Halbleitervorrichtung umfasst ein Halbleitersubstrat, eine erste Mantelschicht, eine aktive Schicht, eine zweite Mantelschicht und eine Kontaktschicht, die in dieser Reihenfolge auf dem Halbleitersubstrat vorgesehen sind, und eine Phasenmodulationsschicht, die zwischen der ersten Mantelschicht und der aktiven Schicht oder zwischen den aktiven Schicht und zweiten Mantelschicht vorgesehen ist. Die Phasenmodulationsschicht umfasst eine Basisschicht und mehrere erste modifizierte Brechungsindexbereiche, die einen anderen Brechungsindex als die Basisschicht aufweisen. In einem Fall, in dem ein virtuelles Quadratgitter innerhalb einer Ebene, die senkrecht zu einer Dickenrichtung der Phasenmodulationsschicht verläuft, angeordnet ist, ist die Phasenmodulationsschicht ...

Surface-emitting power laser and process for fabricating this laser

Laser diode array

The semiconductor laser diodes 20, each including a primary diffraction grating 31, are radially arranged on an InP substrate 10 such that the primary diffraction grating faces a through hole 10a formed in the substrate. An optical fibre including a 45{ conic reflecting mirror 32a redirects light along the optical fibre. Alternatively, surface emission of laser light may be obtained using a prismatic element having an inclined conic recess which redirects light away from the surface of the substrate (figure 10).

Surface-emitting laser diode array and driving method thereof, photodetector, photodetector array, optical inter-connection system,

INTEGRATED GRATING OUTPUT COUPLER IN DIODE LASERS

... 1507352 Electroluminescence XEROX CORP 8 May 1975 [15 Oct 1974] 19417/75 Heading C4S [Also in Division H1] In a single heterostructure semiconductor laser polarized radiation is emitted at an angle to the plane of the light waveguide region 2 by forming the heteroboundary as a regular triangularlytoothed grating 5. Radiation generated within the region 2 and reflected by end films 10 is scattered by the teeth, a resulting beam of radiation inclined to the plane of the region being obtained. This angle is determined by the periodic spacing of the teeth in relation to the stimulated emission wavelength, and if the tooth spacing is an integral number of radiation wavelengths, the emission is at a right angle to the plane of the waveguide region. The output is extracted through a major surface of the semiconductor which is coated with an antireflection film 12. The semiconductor structure may consist of a p-type GaAs substrate 4, a p-type Ga 0À4 AP 0À6 As layer 3 having a toothed grating boundary ...

Common cathode laser driving circuit

A method (700) for biasing a tunable laser (310) during burst-on and burst-off states through a common-cathode laser driving circuit (400) includes delivering a bias current (IBS) to an anode of a gain-section diode (402) having a shared substrate with the laser, and receiving a burst mode signal indicative of a burst-on state or aburst-off state. When the burst mode signal (330) is indicative of the burst-off state, the method includes sinking a sink current (IsINK) away from the anode of the gain-section diode (402). The sink current is less than the bias current delivered to the anode of the gain-section diode (402). When the burst mode signal (330) transitions to be indicative of the burst-on state from the burst-off state, the method includes ceasing the sinking of the sink current away from the anode of the gain-section diode, and delivering an overshoot current (Iover) to the anode of the gain-section diode to accelerate heating of the gain-section diode(402).

DIODE LASER WITH INTEGRATED PHOTO TRANSISTOR

PROCEDURE AND DEVICE FOR THE PRODUCTION OF A TERAHERTZ RADIATION

LASER SENSOR FOR SELFMIXING INTERFEROMETRIE WITH INCREASED PROOF RANGE

SINGLE-WAVELENGTH, UNEQUAL-LENGTH-MULTI-CAVITY GRATING-OUTCOUPLED SURFACE EMITTING LASER WITH STAGGERED TUNED DISTRIBUTED BRAGG REFLECTORS

BEAM COLUMNATION USING MULTIPLE COUPLED ELEMENTS

An electrically pumped, distributed feedback laser having all side surfaces of the active laser medium cleaved and a periodic structure at a 45.degree. angle to all of the cleaved surfaces. Current confining channels restrict pumping current to selected regions of the active laser medium to provide sufficient feedback such that two parallel filamentary areas of the active medium lase. By having multiple lasing filaments the divergence of the output beam in the direction of the width of the filaments is reduced by a factor proportional to the number of filamentary lasing areas.

OPTICAL AMPLIFIER

An optical amplifier is described. The optical amplifier (1) comprises a semiconductor disk gain medium (2) including at least one quantum well layer (9) and a pump field source (17) for generating an optical pump field (3) for the semiconductor disk gain medium. The optical amplifier acts to generate an output optical field (5) from an input optical field (4) received by the optical amplifier and arranged to be incident upon the semiconductor disk gain medium. Employing a semiconductor disk gain medium within the optical amplifier allows it to be optically pumped and thus provided for increased stability and beam quality of the output optical field while allowing for the design of optical amplifiers which can operate across a broad range of wavelengths. The optical amplifier may be employed with continuous wave or pulsed input optical fields.

LASER HAS DIODE HAS TWO GUIDES Of WAVE AND HAS REACTION DISTRIBUEE

LASER HAS DIODE HAS HETEROJUNCTION

LASER DIODE HAS RESONATOR DISTRIBUTES

SURFACE PLASMON BAND EDGE LASER CAPABLE OF OUTPUTTING A LASER BEAM HAVING A SMALL LIGHT SPOT WHICH IS OVER THE DIFFRACTION LIMIT OF A LASER

PURPOSE: A surface plasmon band edge laser is provided to produce a laser beam having a light spot which is over an existing diffraction limit by forming a periodic structure consisting of a quantum dot on a metal surface. CONSTITUTION: A surface plasmon band edge laser(10) comprises a metal layer(11) and a gain medium layer(12) having a periodic structure arranged on the metal layer. The metal layer is used to generate surface plasmon resonance on an interface of the gain medium layer. The metal layer is made of an easy material to generate the surface plasmon resonance like silver or gold. The gain medium layer is used for the stimulated emission of light. The gain medium layer is composed of a plurality of quantum dots. The gain medium layer is formed into a periodic repetitive structure. COPYRIGHT KIPO 2012 ...

Surface emitting laser

The laser comprises an active layer (4) with edges cleaved and/or dry etched so that the electromagnetic radiation undergoes total internal reflection. The layer is bounded on one face by a laser substrate (7) and on the other by a Bragg grating having lattices extending in second (11) and first (12) orthogonal directions, each of pitch related to that of the other and to the desired wavelength of the laser. Adjacent the substrate (7) is a heat sink (40), which acts as return path for electrical energy. Adjacent the grating (11, 12) is an electrode layer (24) having a window (26) through which the output laser energy (42) is radiated.

Super-luminescent folded cavity light emitting diode

Super-luminescent (FCLED) "Folded Cavity Light Emitting Diode" comprising a cavity folding waveguide (34) that has at least one total internal reflecting prism (34 A), which provides for a redirection of intra-cavity produced fundamental photonic radiation (40 A) from a longitudinal propagation (40 B) into a transverse propagation (40° C.), and back into a longitudinal (40 E) yet reversed propagation (40° F.) defining a folded cavity, an active-region (36) that comprises an active-area (36 B) defining spontaneous-emission of photonic radiation, and a photon collimating window emitter-layer (38), which is capable of collimating and focusing sufficient undiffused optical radiation into a propagation direction away from the present invention's optically folded vertical cavity.

Laser-to-fiber coupling

Our wafer scale processing techniques produce chip-laser-diodes with a diffraction grating (78) that redirects output light out the top (88) and/or bottom surfaces. Generally, a diffraction grating (78) and integrated lens-grating (78) are used herein to couple light from the chip to an output fiber (74), and the lens-grating (78) is spaced from the diffraction grating (76). Preferably the diffraction grating (76) and integrated lens grating (78) are also used to couple light from the output fiber (74) back to the active region of the chip. The integrated lens-grating (78) can be in a coupling block (82). The use of a coupling block (82) can eliminate "facet-type damage". A coupling block (82) is generally used herein to couple light from the chip to an output fiber (74), and preferably to couple feedback reflected from the fiber (74) back to the chip.

Resonant cavity light emitting device

A light emitting device includes a resonant cavity formed by a reflective metal layer and a distributed Bragg reflector. Light is extracted from the resonant cavity through the distributed Bragg reflector. A light emitting region sandwiched between a layer of first conductivity type and a layer of second conductivity type is disposed in the resonant cavity. In some embodiments, first and second contacts are formed on the same side of the resonant cavity, forming a flip chip or epitaxy up device.

Semiconductor laser device

This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM which is optically connected to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, and a diffraction grating layer 6 which is optically connected to the active layer 4. The spatial light modulator SLM includes a common electrode 25, a plurality of pixel electrodes 21, and a liquid crystal layer LC arranged between the common electrode 25 and the pixel electrodes 21. A laser beam output in a thickness direction of the diffraction grating layer 6 is modulated and reflected by the spatial light modulator SLM and is output to the outside.

Method And System For A Light Source Assembly Supporting Direct Coupling To An Integrated Circuit

Methods and systems for a light source assembly for coupling to a photonically enabled complementary metal-oxide semiconductor (CMOS) chip are disclosed. The light source assembly may comprise a laser, a microlens, a turning mirror, and an optical bench, and may generate an optical signal utilizing the laser, focus the optical signal utilizing the microlens, and reflect the optical signal at an angle defined by the turning mirror. The reflected optical signal may be transmitted out of the assembly to grating couplers in the photonically enabled CMOS chip. The assembly may comprise a non-reciprocal polarization rotator, comprising a latching faraday rotator. The assembly may comprise a reciprocal polarization rotator, which may comprise a half-wave plate comprising birefringent materials operably coupled to the optical bench. The turning mirror may be integrated in the optical bench and may reflect the optical signal to transmit through a lid operably coupled to the optical bench.

Semiconductor laser element, method of manufacturing semiconductor laser element, and optical module

In order to provide a semiconductor laser element or an integrated optical device with high reliability, a horizontal-cavity semiconductor laser or an optical module includes a deeply dug DBR mirror serving as a cavity mirror, the deeply dug DBR mirror being composed of a material that is lattice-matched to a substrate and that has a band gap energy that does not absorb light emitted from an active layer.

Diode laser and method for manufacturing a high-efficiency diode laser

A diode laser having aluminum-containing layers and a Bragg grating for stabilizing the emission wavelength achieves an improved output/efficiency. The growth process is divided into two steps for introducing the Bragg grating, wherein a continuous aluminum-free layer and an aluminum-free mask layer are continuously deposited after the first growth process such that the aluminum-containing layer is completely covered by the continuous aluminum-free layer. Structuring is performed outside the reactor without unwanted oxidation of the aluminum-containing semiconductor layer. Subsequently, the pre-structured semiconductor surface is further etched inside the reactor and the structuring is impressed into the aluminum-containing layer. In this process, so little oxygen is inserted into the semiconductor crystal of the aluminum-containing layers in the environment of the grating that output and efficiency of a diode laser are not reduced as compared to a diode laser without grating layers that was produced in an epitaxy step.

Method for the reuse of gallium nitride epitaxial substrates

A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.

Human placental collagen compositions, and methods of making and using the same

The present invention provides compositions comprising human placental telopeptide collagen, methods of preparing the compositions, methods of their use and kits comprising the compositions. The compositions, kits and methods are useful, for example, for augmenting or replacing tissue of a mammal.

SURFACE EMITTING LASER ARRAY ELEMENT, OPTICAL SCANNING DEVICE, AND IMAGE FORMING APPARATUS

A surface emitting laser array element is disclosed that includes a lower distributed bragg reflector (DBR) that is formed on a substrate, an active layer that is formed on the lower DBR, and an upper DBR that is formed on the active layer. A mesa and a dummy mesa that is arranged at a periphery of the mesa are created by removing a portion of the upper DBR. The mesa forms a surface emitting laser, and a wiring is connected to an electrode that is formed on an upper face of the mesa. The wiring includes a portion that is arranged over an upper face of the dummy mesa, a side face of the dummy mesa, and a bottom face at a peripheral region of the dummy mesa extending along a longitudinal direction of the wiring. 1. A surface emitting laser array element comprising:a lower distributed bragg reflector that is formed on a substrate;an active layer that is formed on the lower distributed bragg reflector;an upper distributed bragg reflector that is formed on the active layer;a mesa and a dummy mesa that are created by removing a portion of the upper distributed bragg reflector, the mesa forming a surface emitting laser and the dummy mesa being arranged at a periphery of the mesa; anda wiring that is connected to an electrode that is formed on an upper face of the mesa, the wiring including a portion that is arranged over an upper face of the dummy mesa, a side face of the dummy mesa, and a bottom face at a peripheral region of the dummy mesa extending along a longitudinal direction of the wiring.2. The surface emitting laser array element as claimed in claim 1 , wherein two strips of the wiring are arranged between the dummy mesas.3. The surface emitting laser array element as claimed in claim 1 , whereinthe portion of the wiring that is arranged over the peripheral region of the dummy mesa is arranged to extend in an outward direction from the dummy mesa to be wider than a remaining portion of the wiring.4. The surface emitting laser array element as claimed in claim 1 , ...

Lateral electrochemical etching of iii-nitride materials for microfabrication

Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

TUNABLE OPTICAL PHASE FILTER

An embodiment provides a 850 nm VCSEL transmitter that includes an active region having: one or more quantum wells having InGaAs material; and two or more quantum well barriers having AlGaAs or GaAsP materials adjacent to the one or more quantum wells. An in-phase or anti-phase, step or ring surface relief structure depth control is made on either (i) the topmost GaAs surface/contact layers by either dry or wet etching, or (ii) with the help of PECVD made thin SiN layer made on GaAs layer with wet etching for tunable static and dynamic characteristics such as output power, slope efficiency, and resonance oscillation bandwidth, photon lifetime through its damping, rise/fall times of eye-opening, over shooting, and jitter respectively. Moreover, anti-phase surface relief structure diameter control can be made on the topmost GaAs step surface/contact, or SiN ring layers for filtering of higher order modes and reduction of spectral line width. 1. A vertical cavity surface-emitting laser element (VCSEL) , comprising:a top distributed Bragg reflector (DBR) and a bottom DBR each made with multiple layers of semiconductor thin films;{'sub': x', 'y, 'an active region having at least one quantum well and at least one quantum well barrier each having a thickness of 3-10 nm formed between the top DBR and the bottom DBR, the at least one quantum well comprising InGaAs with an In composition of 0.04-0.12, the at least one quantum well barrier comprising AlGaAs where x is between 0.3-0.4 or GaAsPwhere y is between 0.2-0.3, wherein the at least one quantum well is adjusted for a photoluminescence emission target between 835-840 nm; and'}a surface relief structure formed on at least the top-most layer of the top DBR by dry or wet etching of semiconductor or dielectric thin films, wherein the surface relief structure has a depth of 20-150 nm and a diameter of 2-6 um, and the top surface of the top-most layer is terminated (1) either in-phase or anti-phase in relation to a standing ...

INTEGRATED OPTOELECTRONIC DEVICE COMPRISING A MACH-ZEHNDER MODULATOR AND A VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL)

A Mach-Zehnder modulator (MZM) is horizontally integrated with a VCSEL. The horizontally-integrated MZM overcomes wavelength dependence problems of horizontally-integrated EA modulators and yet has the same advantages as horizontally-integrated EA modulators in terms of overcoming the ER and modulation range problems associated with the vertically-integrated EA and EO modulators. By overcoming these problems with the existing integrated modulators, the operation speed of the VCSEL is increased and the modulation signal range is extended to allow a wider range of modulation signals and modulation schemes, including large-signal digital modulation schemes. 1. An optoelectronic device comprising:a substrate;a first vertical cavity surface emitting laser (VCSEL) disposed on the substrate having a first distributed Bragg reflector (DBR) disposed above the substrate, a first quantum well (QW) region disposed above the first DBR, a second DBR disposed above the first QW region, and a first reflector disposed above the second DBR opposite the substrate, the first reflector reflecting light produced by the first VCSEL back into the optoelectronic device; anda Mach-Zehnder modulator (MZM) horizontally integrated into the optoelectronic device beside the first VCSEL, wherein the MZM receives light produced by the first VCSEL and modulates the received light to produce a modulated optical signal, wherein the MZM has a second reflector disposed in or on the MZM that prevents the light received from the first VCSEL from passing through a top surface of the MZM, wherein the first and second reflectors are different portions of a single reflector.23-. (canceled)4. The optoelectronic device of claim 1 , further comprising:an output cavity having a structure of a VCSEL, the output cavity being horizontally integrated into the optoelectronic device beside the MZM opposite the first VCSEL, the output cavity comprising a third DBR, a second QW region disposed above the third DBR, and a ...

LIGHT EMITTING ELEMENT

A light emitting element includes a laminated structure formed by laminating a first light reflecting layer , a light emitting structure , and a second light reflecting layer . The light emitting structure is formed by laminating, from the first light reflecting layer side, a first compound semiconductor layer , an active layer , and a second compound semiconductor layer . In the laminated structure , at least two light absorbing material layers are formed in parallel to a virtual plane occupied by the active layer 1. A light emitting element comprising a laminated structure formed by laminating:a first light reflecting layer;a light emitting structure; anda second light reflecting layer, whereinthe light emitting structure is formed by laminating:from the first light reflecting layer side,a first compound semiconductor layer;an active layer; anda second compound semiconductor layer, andin the laminated structure, at least two light absorbing material layers are formed in parallel to a virtual plane occupied by the active layer.2. The light emitting element according to claim 1 , wherein at least four light absorbing material layers are formed.3. The light emitting element according to claim 1 , wherein{'sub': eq', '0, 'claim-text': {'br': None, 'i': m·λ', 'n', 'L', 'm·λ', 'n, 'sub': 0', 'eq', '0', '0', 'eq, '0.9×{()/(2·)}≤≤1.1×{()/(2·)}'}, 'when an oscillation wavelength is represented by Ao, an equivalent refractive index of a whole of the two light absorbing material layers and a portion of the laminated structure located between the light absorbing material layers is represented by n, and a distance between the light absorbing material layers is represented by L,'}is satisfied.Provided that m is 1 or any integer of 2 or more including 1.4. The light emitting element according to claim 1 , wherein the light absorbing material layers have a thickness of λ0/(4·n) or less.5. The light emitting element according to claim 1 , wherein the light absorbing material ...

SURFACE EMITTING QUANTUM CASCADE LASER

A surface emitting quantum cascade laser includes an active layer and a first semiconductor layer. The active layer includes a plurality of quantum well layers and is capable of emitting laser light by intersubband transition. The first surface includes an internal region and an outer peripheral region. Grating pitch of the first pits is m times grating pitch of the second pits. The outer peripheral region surrounds the internal region. A first planar shape of an opening end of the first pit is asymmetric with respect to a line passing through barycenter of the first planar shape and is parallel to at least one side of the first two-dimensional grating. A second planar shape of an opening end of the second pit is symmetric with respect to each of lines passing through barycenter of the second planar shape and is parallel to either side of the second two-dimensional grating. 1. A surface emitting quantum cascade laser comprising:an active layer including a plurality of quantum well layers stacked therein and being capable of emitting laser light by intersubband transition;a first semiconductor layer provided on the active layer and having a first surface, the first surface including an internal region in which first pits constitute a first two-dimensional grating and an outer peripheral region in which second pits constitute a second two-dimensional grating, the outer peripheral region surrounding the internal region:an insulator layer which covers side surfaces and bottom surfaces of the first pits, side surfaces and bottom surfaces of the second pits, and a portion of the internal region not provided with the first pits;an upper electrode which covers a portion of the outer peripheral region not provided with the second pits and fills the first pits and the second pits via the insulator layer;a second semiconductor layer provided on a surface of the active layer on opposite side from a surface provided with the first semiconductor; anda lower electrode which is ...

Micro Laser Diode Display Device and Electronics Apparatus

A micro laser diode display device and an electronics apparatus are disclosed. The micro laser diode display device comprises: a substrate ()/receiving substrate (). wherein first type electrodes () are arranged on the substrate ()/receiving substrate (); a micro laser diode () array of at least one color bonded on the substrate ()/receiving substrate (), wherein a first side of micro laser diodes () in the micro laser diode array is connected to the first type electrodes (); and second type electrodes () connected to a second side of the micro laser diodes (). 1. A micro laser diode display device , comprising:a substrate, wherein one or more first type electrodes are arranged on the substrate;a micro laser diode array comprising a plurality of micro laser diodes of at least one color bonded on the substrate, wherein a first side of the micro laser diodes in the micro laser diode array is connected to the first type electrodes; andone or more second type electrodes connected to a second side of the micro laser diodes.2. The micro laser diode display device according to claim 1 , wherein the micro laser diodes comprise a vertical cavity surface emitting laser structure claim 1 , which includes a lower contact layer claim 1 , a lower Bragg reflector layer claim 1 , a lower spacer layer claim 1 , an active layer claim 1 , an upper spacer layer claim 1 , an upper Bragg reflector layer and an upper contact layer.3. The micro laser diode display device according to claim 1 , further comprising a dielectric filler layer is filled among the micro laser diodes.4. The micro laser diode display device according to claim 1 , wherein at least one part of the second type electrodes is formed at a lateral side of the micro laser diodes.5. The micro laser diode display device according to claim 3 , wherein the second type electrodes are formed on top of the micro laser diodes and the dielectric filler layer claim 3 , and are patterned so that the micro laser diodes are exposed.6. ...

LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure. 1. A light-emitting device comprising:a current-constriction structure;an insulation structure surrounding the current-constriction structure;a plurality of holes disposed within the insulation structure;an upper electrode; anda compound-semiconductor surface consisting of compound semiconductor material; a current-constriction-structure active region having an active-region compositional layer configuration;', 'a current-constriction-structure first region disposed above a substrate of the light-emitting device and below the current-constriction-structure active region, the current-constriction-structure first region having a first-region compositional layer configuration;', a current-constriction-structure-second-region first portion having a second-region-first-portion compositional layer configuration;', 'a current-constriction-structure-second-region second portion; and', 'a current-constriction-structure-second-region third portion having a second-region-third-portion compositional layer configuration;', 'wherein the current-constriction-structure-second-region first portion being disposed above ...

SURFACE EMITTING LASER AND OPTICAL COHERENCE TOMOGRAPHY APPARATUS

In order to provide a wavelength tunable surface emitting laser capable of improving a wavelength tuning efficiency, provided is a surface emitting laser, including: a first reflector; a semiconductor cavity including an active layer; and a second reflector, the first reflector, the semiconductor cavity, and the second reflector being formed in the stated order, a gap portion being formed between the first reflector and a semiconductor layer, a cavity length being tunable, in which the surface emitting laser has a high reflectivity structure formed between the gap portion and the semiconductor cavity, and an expression of “(λ/2)×m+λ/8 Подробнее

RESONANT OPTICAL CAVITY LIGHT EMITTING DEVICE

Resonant optical cavity light emitting devices are disclosed, where the device includes a substrate, a first spacer region, a light emitting region, a second spacer region, and a reflector. The light emitting region is configured to emit a target emission deep ultraviolet wavelength, and is positioned at a separation distance from the reflector. The reflector may have a metal composition comprising elemental aluminum or may be a distributed Bragg reflector. The device has an optical cavity comprising the first spacer region, the second spacer region and the light emitting region, where the optical cavity has a total thickness less than or equal to K·λ/n. K is a constant ranging from 0.25 to less than 1, λ is the target wavelength, and n is an effective refractive index of the optical cavity at the target wavelength. 1. A resonant optical cavity light emitting device comprising:a substrate;a first spacer region coupled to the substrate, the first spacer region being non-absorbing to a target emission deep ultraviolet wavelength (target wavelength), wherein at least a portion of the first spacer region comprises a first electrical polarity of n-type;a light emitting region on the first spacer region, the light emitting region being configured to emit the target wavelength;a second spacer region on the light emitting region, the second spacer region being non-absorbing to the target wavelength, wherein at least a portion of the second spacer region comprises a second electrical polarity opposite of the first electrical polarity; anda reflector coupled to the second spacer region, the reflector having a metal composition comprising elemental aluminum;wherein the light emitting region is positioned at a separation distance from the reflector; andwherein the resonant optical cavity light emitting device has an optical cavity between the reflector and a first surface of the substrate, the optical cavity comprising the first spacer region, the second spacer region and the ...

SINGLE MODE VERTICAL-CAVITY SURFACE-EMITTING LASER

A vertical-cavity surface-emitting laser (VCSEL) includes a first reflector having a first reflectivity; a second reflector having a second reflectivity, where the second reflectivity is less than the first reflectivity; a gain region between the first and second reflectors; and a substrate having a first surface and a second surface, where the first surface is coupled to the second reflector, and where the second surface is formed into a lens to act upon light emitted by the VCSEL through the substrate. The VCSEL lases in a single transverse mode. 1. A vertical-cavity surface-emitting laser (VCSEL) comprising:a first reflector having a first reflectivity;a second reflector having a second reflectivity, wherein the second reflectivity is less than the first reflectivity;a light generation region between the first and second reflectors; anda substrate having a first surface and a second surface, wherein the first surface is coupled to the second reflector, and wherein the second surface is formed into a lens shape to act upon light emitted by the VCSEL through the substrate,wherein the VCSEL lases in a single transverse mode.2. The VCSEL of claim 1 , further comprising an oxide layer having an aperture with an aperture diameter in a central area of the oxide layer claim 1 ,wherein the aperture in the oxide layer has a higher refractive index than the surrounding oxide layer; the oxide layer is located at or near a null of a standing wave in the VCSEL; and a center of the oxide layer is approximately aligned with a central axis of the first reflector, the light generation region, the second reflector, and the substrate.3. The VCSEL of claim 2 , wherein the first reflector is a distributed Bragg reflector and comprises a first number of pairs of semiconductor layers in a central region of the first reflector and a second number of pairs of semiconductor layers in an outer region surrounding the central region claim 2 , wherein the first number of pairs is greater than ...

System and method of ambient/pervasive user/healthcare experience

A system and method of ambient/pervasive user experience (including healthcare) is described, utilizing (a) Super System on Chip(s), (b) intelligent/machine learning algorithm(s), (c) high resolution holographic display(s), (d) augmented reality devices and/or (f) point of care diagnostics system(s). 1. A display device , the device comprising:(a) a first light source of emitting a first color; wherein the quantum dots are in a photonic crystal,', 'wherein the light emitting layer absorbs a portion of the first light of the first color,', 'wherein the light emitting layer emits the second light of the second color,, '(b) a light emitting layer comprises quantum dots; and'}(c) an electrically switchable light valve or an electrically switchable light shutter.2. The display device according to claim 1 , wherein the quantum dot comprises a two-dimensional material.3. The display device according to claim 1 , wherein the quantum dot is electromagnetically coupled with a three-dimensional structure of dimension less than 400 nanometers.4. The display device according to claim 1 , wherein the first light source is an organic light emitting diode or an organic light emitting diode comprising quantum dots.5. The display device according to claim 1 , wherein the first light is a microlight emitting diode or a microlight emitting diode integrated with photonic crystals light collection optics.6. The display device according to claim 1 , wherein the first light source is a vertical cavity surface emitting laser.7. The display device according to claim 1 , wherein the first light source is a vertical cavity surface emitting laser claim 1 , wherein the vertical cavity surface emitting laser comprises two metallized Bragg mirrors claim 1 , wherein one metallized Bragg mirror comprises a hole.8. The display device according to claim 1 , wherein the electrically switchable light valve or the electrically switchable light shutter comprises a phase change material or a phase change ...

COMPACT DISTRIBUTED BRAGG REFLECTORS

Ultra compact DBRs, VCSELs incorporating the DBRs and methods for making the DBRs are provided. The DBRs are composed of a vertical reflector stack comprising a plurality of adjacent layer pairs, wherein each layer pair includes a layer of single-crystalline Group IV semiconductor and an adjacent layer of silicon dioxide.

SURFACE EMITTING LASER, INFORMATION ACQUISITION APPARATUS, AND IMAGING APPARATUS

A surface emission laser includes a first beam, a second reflector disposed in an opening portion formed in the first beam, and a second beam disposed in the opening portion, and extending in a widthwise direction of the first beam to connect the second reflector and the first beam, wherein a length, in a longitudinal direction of the first beam, of the second beam is smaller than a length, in the longitudinal direction of the first beam, of the second reflector. 1. A surface emission laser comprising:a first reflector;an active layer disposed on the first reflector;a first beam disposed on the active layer via a space;second reflector disposed in an opening portion formed in the first beam; andsecond beam disposed in the opening portion, and extending in a widthwise direction of the first beam to connect the second reflector and the first beam,wherein both ends, at least in a longitudinal direction, of the first beam are fixed ends, andwherein a length, in the longitudinal direction of the first beam, of the second beam is smaller than a length, in the longitudinal direction of the first beam, of the second reflector.2. The surface emission laser according to claim 1 , further comprising an electrode disposed on the first beam claim 1 ,wherein the second reflector is not electrically connected to the electrode.3. The surface emission laser according to claim 2 , wherein the electrode is formed to be connected to the first beam in the longitudinal direction.4. The surface emission laser according to claim 2 , wherein a volume resistivity of the first beam is equal to or larger than 1×10Ωcm.5. The surface emission laser according to claim 2 , further comprising an additional electrode that forms a pair with the electrode for driving the first beam.6. The surface emission laser according to claim 1 , wherein the second reflector is not electrically connected to the first beam.7. The surface emission laser according to claim 6 , wherein a volume resistivity of the ...

AUTHORIZING THE USE OF A BIOMETRIC CARD

Embodiments of the present invention provide a system and method for authorizing the use of a biometric transaction card. Specifically, embodiments of the present invention provide a biometric card having a biometric sensor to determine whether the biometric information (fingerprint) is from human skin. In a typical embodiment, the cardholder approaches a magnetic reader with the card. The user places his/her finger on the SpOsensor of the card. The sensor estimates the SpOlevel. Card authorization is based, in part, on the estimated SpOlevel. 1. A method for authorizing use of a biometric card , comprising:sensing a fingerprint of a card user;authenticating the sensed fingerprint information;{'sub': '2', 'estimating an SpOlevel of the card user; and'}{'sub': '2', 'authorizing the use of the card based on the fingerprint authentication and the SpOlevel estimate.'}2. The method of claim 1 , wherein a sensor is used to estimate the SpOlevel of the card user.3. The method of claim 2 , wherein the sensor includes a red laser claim 2 , an infrared (IR) laser claim 2 , and at least one photodetector.4. The method of claim 3 , wherein the red laser is a vertical-cavity surface-emitting laser.5. The method of claim 3 , wherein the infrared (IR) laser is a vertical-cavity surface-emitting laser.6. The method of claim 2 , wherein the sensor comprises a multi-sided configuration.7. The method of claim 2 , wherein the sensor comprises a transparent configuration.8. The method of claim 3 , wherein the red laser structure comprises n-Substrate claim 3 , n-type Bragg reflector claim 3 , p-type Bragg reflector claim 3 , and quantum well layers.9. The method of claim 3 , wherein the infrared (IR) laser structure comprises n-Substrate claim 3 , n-type Bragg reflector claim 3 , p-type Bragg reflector claim 3 , and quantum well layers.10. The method of claim 3 , wherein the photodetector structure comprises an intrinsic semiconductor region claim 3 , a p-type region claim 3 , and an n- ...

ELECTRO-OPTIC MODULATOR DEVICE, OPTICAL DEVICE AND METHOD OF MAKING AN OPTICAL DEVICE

An electro-optic modulator device includes a modulation region, a reflecting region, a conductive line and an anti-reflecting region. The modulation region includes a doped region. The reflecting region is over the modulation region. The conductive line is connected to the doped region. The conductive line extends through the reflecting region. The anti-reflecting region is on an opposite surface of the modulation region from the reflecting region. 1. An electro-optic modulator device comprising: 'a doped region;', 'a modulation region comprisinga reflecting region over the modulation region;a conductive line connected to the doped region, wherein the conductive line extends through the reflecting region; andan anti-reflecting region on an opposite surface of the modulation region from the reflecting region.2. The electro-optic modulator device of claim 1 , wherein the reflecting region comprises a distributed Bragg reflector.3. The electro-optic modulator device of claim 1 , wherein the reflecting region comprises a number of reflecting layers ranging from about 10 layers to about 20 layers.4. The electro-optic modulator device of claim 1 , wherein the reflecting region comprises a plurality of reflecting layers claim 1 , each reflecting layer of the plurality of reflecting layers having a thickness ranging from about 60 nanometers (nm) to about 400 nm.5. The electro-optic modulator device of claim 1 , wherein the anti-reflecting region comprises a number of anti-reflecting layers ranging from about 3 layers to about 10 layers.6. The electro-optic modulator device of claim 1 , wherein the anti-reflecting region comprises a plurality of anti-reflecting layers claim 1 , each anti-reflecting layer of the plurality of anti-reflecting layers having a thickness ranging from about 230 nanometers (nm) to about 500 nm.7. The electro-optic modulator device of claim 1 , wherein the modulation region comprises Si claim 1 , Ge or SiGe.8. The electro-optic modulator device of ...

Semiconductor light-emitting device and manufacturing method for the same

The embodiment relates to a semiconductor light-emitting device comprising a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a contact layer, and a phase modulation layer located between the first cladding and active layers or between the active and second cladding layers. The phase modulation layer comprises a basic layer and plural first modified refractive index regions different from the basic layer in a refractive index. In a virtual square lattice set on the phase modulation layer such that the modified refractive index region is allocated in each of unit constituent regions constituting square lattices, the modified refractive index region is arranged to allow its gravity center position to be separated from the lattice point of the corresponding unit constituent region, and to have a rotation angle about the lattice point according a desired optical image.

VERTICAL CAVITY SURFACE EMITTING LASER

A vertical cavity surface emitting laser includes an active layer having a quantum well structure, a first laminate for a first distributed Bragg reflector, and a first spacer region provided between the active layer and the first laminate. A barrier layer of the quantum well structure includes a first compound semiconductor containing aluminum as a group m constituent element. The first spacer region includes a second compound semiconductor having a larger aluminum composition than the first compound semiconductor. A concentration of first dopant in the first laminate is larger than a concentration of the first dopant in the first portion of the first spacer region. The concentration of the first dopant in the first portion of the first spacer region is larger than a concentration of the first dopant in the second portion of the first spacer region. 1. A vertical cavity surface emitting laser comprising:an active layer having a quantum well structure including a well layer and a barrier layer,a first laminate for a first distributed Bragg reflector; anda first spacer region provided between the active layer and the first laminate, whereinthe barrier layer includes a first compound semiconductor containing aluminum as a group m constituent element,the first spacer region includes a second compound semiconductor having a larger aluminum composition than the first compound semiconductor,the first spacer region includes a first portion and a second portion,the first laminate, the first portion of the first spacer region, the second portion of the first spacer region, and the active layer are arranged along a direction of a first axis,the first portion of the first spacer region and the first laminate contain first dopant,the first portion of the first spacer region is provided from the first laminate to the second portion of the first spacer region,the second portion of the first spacer region is provided from the active layer to the first portion of the first spacer ...

TECHNIQUES FOR VERTICAL CAVITY SURFACE EMITTING LASER OXIDATION

Some embodiments relate to a vertical cavity surface emitting laser (VCSEL) device including a VCSEL structure overlying a substrate. The VCSEL structure includes a first reflector, a second reflector, and an optically active region disposed between the first and second reflectors. A first spacer laterally encloses the second reflector. The first spacer comprises a first plurality of protrusions disposed along a sidewall of the second reflector. 1. A vertical cavity surface emitting laser (VCSEL) device , comprising:a substrate;a VCSEL structure overlying the substrate, wherein the VCSEL structure comprises a first reflector, a second reflector, and an optically active region disposed between the first and second reflectors; anda first spacer laterally enclosing the second reflector, wherein the first spacer comprises a first plurality of protrusions disposed along a sidewall of the second reflector.2. The VCSEL device of claim 1 , wherein the second reflector comprises a plurality of recesses disposed along the sidewall of the second reflector.3. The VCSEL device of claim 2 , wherein the first spacer continuously extends from an upper surface of the optically active region to the plurality of recesses of the second reflector.4. The VCSEL device of claim 2 , wherein the first plurality of protrusions directly contacts the plurality of recesses.5. The VCSEL device of claim 1 , further comprising:a masking layer overlying the VCSEL structure, wherein the first plurality of protrusions extends along a sidewall of the masking layer.6. The VCSEL device of claim 5 , further comprising:a second spacer laterally enclosing the first spacer and the VCSEL structure, wherein the second spacer comprises a second plurality of protrusions that extends along a sidewall of the first spacer.7. The VCSEL device of claim 6 , wherein an upper surface of the masking layer claim 6 , an upper surface of the first spacer claim 6 , and an upper surface of the second spacer are aligned.8. The ...

Rigid High Power and High Speed Lasing Grid Structures

Disclosed herein are various embodiments for stronger and more powerful high speed laser arrays. For example, an apparatus is disclosed that comprises (1) a single laser emitting epitaxial structure that comprises a plurality of laser regions, each laser region of the single laser emitting epitaxial structure being electrically isolated within the single laser emitting epitaxial structure itself relative to the other laser regions of the single laser emitting epitaxial structure, and (2) an electrical waveguide configured to provide current to the laser regions. 1. An apparatus comprising:a single laser emitting epitaxial structure that comprises a plurality of laser regions, each laser region of the single laser emitting epitaxial structure being electrically isolated within the single laser emitting epitaxial structure itself relative to the other laser regions of the single laser emitting epitaxial structure; andan electrical waveguide configured to provide current to the laser regions.2. The apparatus of wherein the electrical waveguide comprises a plurality of electrical contacts located on a second platform or chip.3. The apparatus of wherein the single laser emitting epitaxial structure comprises a single vertical cavity surface emitting laser (VCSEL) epitaxial structure.4. The apparatus of wherein the single VCSEL epitaxial structure does not include a plurality of mesas.5. The apparatus of wherein the single laser emitting epitaxial structure further comprises a plurality of holes extending therethrough claim 1 , each hole having a layer of oxidation around it claim 1 , the holes and the oxidation layers being positioned to define and electrically isolate the laser regions.6. The apparatus of wherein the single laser emitting epitaxial structure further comprises a plurality of conductive regions formed by ion implantation claim 1 , the ion implantation being positioned to define and electrically isolate the laser regions.7. The apparatus of further ...

Monolithic wdm vcsel arrays by quantum well intermixing

An array of monolithic wavelength division multiplexed (WDM) vertical cavity surface emitting lasers (VCSELs) is provided with quantum well intermixing. Each VCSEL includes a bottom distributed Bragg reflector (DBR), an upper distributed Bragg reflector, and a laser cavity therebetween. The laser cavity includes a multiple quantum well (MQW) layer sandwiched between a lower separate confinement heterostructure (SCH) and an upper SCH layer. Each MQW region experiences a different amount of quantum well intermixing and concomitantly a different lasing wavelength shift.

INTEGRATED LASER ARRAYS BASED DEVICES

Integrated laser arrays based devices and systems and methods of forming the integrated laser arrays based devices and systems are provided. In one aspect, an integrated display includes a semiconductor substrate including a first side and a second side, an array of active-matrix light-emitting pixels, each of the pixels including one or more light-emitting elements formed on the first side and at least one non-volatile memory coupled to the one or more light-emitting elements, each of the light-emitting elements including a lasing structure that has an optical resonator and one or more semiconductor layers in the optical resonator and is operable to emit a laser light, one or more integrated circuits formed on the second side, and conductive interconnects penetrating from the second side through the semiconductor substrate and conductively coupling the one or more integrated circuits to the light-emitting elements. 1. An integrated device comprising:a semiconductor substrate including a first side and a second side;an array of active-matrix light-emitting pixels, each of the pixels including one or more light-emitting elements formed on the first side and at least one non-volatile memory coupled to the one or more light-emitting elements, each of the light-emitting elements including a lasing structure that has an optical resonator and one or more semiconductor layers in the optical resonator and is operable to emit laser light;one or more integrated circuits formed on the second side; andconductive interconnects penetrating from the second side through the semiconductor substrate and conductively coupling the one or more integrated circuits to the light-emitting elements.2. The integrated device of claim 1 , wherein the optical resonator comprises a pair of distributed Bragg reflectors claim 1 , and the one or more semiconductor layers are arranged between the pair of distributed Bragg reflectors.3. The integrated device of claim 1 , wherein each of the light- ...

OPTICAL DEVICE AND SYSTEM HAVING THERMAL BUFFERS

A vertical-cavity surface-emitting laser (VCSEL) device includes a first distributed Bragg reflector (DBR) structure of a first conductivity type, and a second DBR structure of a second conductivity type. The second conductivity type is different than the first conductivity type. The VCSEL includes a cavity positioned between the first DBR structure and the second DBR structure. The cavity includes at least one quantum well structure to generate light. The VCSEL includes a first thermal buffer layer positioned between the cavity and the first DBR structure, and a second thermal buffer positioned between the cavity and the second DBR structure. 1. A vertical-cavity surface-emitting laser (VCSEL) device , comprising:a first distributed Bragg reflector (DBR) structure of a first conductivity type;a second DBR structure of a second conductivity type, the second conductivity type being different than the first conductivity type;at least one quantum well structure positioned between the first DBR structure and the second DBR structure to generate light; anda first thermal buffer layer positioned between the at least one quantum well structure and the first DBR structure,wherein a thickness ‘d’ of the first thermal buffer layer satisfies the following equation:{'sub': T', 'T, 'd<√{square root over (DΔt)}, where Dis a thermal diffusivity of the first thermal buffer layer, and Δt is a pulse width of a signal that generates a current received by the at least one quantum well structure.'}2. The VCSEL device of claim 1 , further comprising:a second thermal buffer layer positioned between the at least one quantum well structure and the second DBR structure.3. The VCSEL device of claim 2 , wherein the first thermal buffer layer and the second thermal buffer layer are sufficiently thick to keep the heat generated in the first and second DBR structures from reaching the at least one quantum well structure for a duration of an electrical pulse of the signal.4. The VCSEL device of ...

Light emitting apparatus and projector

A light emitting apparatus including a plurality of first light emitters and a plurality of second light emitters that differ from the first light emitters in terms of resonance wavelength, in which the second light emitters are each disposed between each adjacent pair of the first light emitters, first light that resonates in the plurality of first light emitters is in phase, and second light that resonates in the plurality of second light emitters is in phase.

Photonic crystal surface-emitting lasers

A photonic-crystal surface-emitting laser (PCSEL) includes a gain medium electromagnetically coupled to a photonic crystal whose energy band structure exhibits a Dirac cone of linear dispersion at the center of the photonic crystal's Brillouin zone. This Dirac cone's vertex is called a Dirac point; because it is at the Brillouin zone center, it is called an accidental Dirac point. Tuning the photonic crystal's band structure (e.g., by changing the photonic crystal's dimensions or refractive index) to exhibit an accidental Dirac point increases the photonic crystal's mode spacing by orders of magnitudes and reduces or eliminates the photonic crystal's distributed in-plane feedback. Thus, the photonic crystal can act as a resonator that supports single-mode output from the PCSEL over a larger area than is possible with conventional PCSELs, which have quadratic band edge dispersion. Because output power generally scales with output area, this increase in output area results in higher possible output powers.

LIGHT EMITTING ELEMENT AND METHOD OF PRODUCING SAME

Light emitting elements, and methods of producing the same, the light emitting elements including: a laminated structure, the laminated structure including a first compound semiconductor layer that includes a first surface and a second surface facing the first surface, an active layer that is in contact with the second surface of the first compound semiconductor layer, and a second compound semiconductor layer; where the first surface of the first compound semiconductor layer has a first surface area and a second surface area, the first and second surface areas being different in at least one of a height or a roughness, a first light reflection layer is formed on at least a portion of the first surface area, and a first electrode is formed on at least a portion of the second surface area.

MONOLITHICALLY INTEGRATED SURFACE EMITTING LASER WITH MODULATOR

A surface emitting laser includes a structure in which a semiconductor substrate, a lower DBR, and an active layer are layered. A VCSEL (vertical cavity surface emitting laser) and an EAM (electro-absorption modulator) are formed adjacent to each other along a first direction defined on the substrate plane such that they are optically coupled. The EAM outputs an emitted light in a direction that is orthogonal to the substrate. The width of a waveguide region of the VCSEL defined in the second direction is narrower than the width of a waveguide region of the EAM. 1. An surface emitting laser comprising:a semiconductor substrate;a lower distributed Bragg reflector formed on the semiconductor substrate;an active layer formed on the lower distributed Bragg reflector; andan upper distributed Bragg reflector formed on the active layer,wherein a vertical cavity surface emitting laser and an electro-absorption modulator are formed adjacent to each other along a first direction defined on the substrate plane such that they are optically coupled,and wherein a width of a waveguide region included in the vertical cavity surface emitting laser, defined in a second direction that is orthogonal to the first direction defined on the substrate plane, is narrower than a width of a waveguide region of the electro-absorption modulator defined in the second direction,and wherein the electro-absorption modulator outputs an emitted light in a direction that is orthogonal to the substrate.2. The surface emitting laser according to claim 1 , wherein claim 1 , in the vertical cavity surface emitting laser claim 1 , transverse modes are formed using reflection that occurs on a face that connects the vertical cavity surface emitting laser and the electro-absorption modulator.3. The surface emitting laser according to claim 1 , wherein claim 1 , the output is taken from the end portion of the electro-absorption modulator claim 1 , wherein claim 1 , the top reflectivity is lower than that in the ...

SURFACE EMITTING LASER ELEMENT AND ATOMIC OSCILLATOR

A surface emitting laser element includes a lower Bragg reflection mirror; an upper Bragg reflection mirror; and a resonator region formed between the lower Bragg reflection mirror and the upper Bragg reflection mirror, and including an active layer. A wavelength adjustment region is formed in the lower Bragg reflection mirror or the upper Bragg reflection mirror, and includes a second phase adjustment layer, a wavelength adjustment layer and a first phase adjustment layer, arranged in this order from a side where the resonator region is formed. An optical thickness of the wavelength adjustment region is approximately (2N+1)×λ/4, and the wavelength adjustment layer is formed at a position where an optical distance from an end of the wavelength adjustment region on the side of the resonator region is approximately M×λ/2, where λ is a wavelength of emitted light, M and N are positive integers, and M is N or less. 1. A surface emitting laser element comprising:a lower Bragg reflection mirror;an upper Bragg reflection mirror; anda resonator region formed between the lower Bragg reflection mirror and the upper Bragg reflection mirror, and including an active layer,wherein a wavelength adjustment region is formed in the lower Bragg reflection mirror or the upper Bragg reflection mirror,wherein the wavelength adjustment region includes a second phase adjustment layer, a wavelength adjustment layer and a first phase adjustment layer, arranged in this order from a side where the resonator region is formed,wherein an optical thickness of the wavelength adjustment region is approximately (2N+1)×λ/4, andwherein the wavelength adjustment layer is formed at a position where an optical distance from an end of the wavelength adjustment region on the side where the resonator region is formed is approximately M×λ/2,where λ is a wavelength of emitted light, M and N are positive integers, and M is less than or equal to N.2. A surface emitting laser element comprising:a lower Bragg ...

Mode Control in Vertical-Cavity Surface-Emitting Lasers

Aspects of the subject disclosure may include, for example, a first distributed Bragg reflector, a second distributed Bragg reflector, an active region with an oxide aperture between the first and second distributed Bragg reflectors, and a dielectric layer, where a positioning of the dielectric layer with respect to the first and second distributed Bragg reflectors and the oxide aperture causes suppression of higher modes of the vertical-cavity surface-emitting laser device. Other embodiments are disclosed.

VERTICAL-CAVITY SURFACE EMITTING LASER (VCSEL) ILLUMINATOR FOR REDUCING SPECKLE

A vertical cavity surface emitting laser (VCSEL) illuminator for reduced speckle has VCSELs with metalayer polarizers, VCSEL arrays with varying aperture sizes, or both. 1. An illuminator comprising:a substrate; andmultiple arrays of vertical cavity semiconductor emitting lasers (VCSELs) on the substrate,wherein at least one of the arrays having VCSELs with apertures of a different size then a size of the apertures of VCSELs of at least one other of the arrays so that the at least one array and at least one other array emit light in different wavelengths.2. The illuminator of comprising four to six of the arrays.3. The illuminator of wherein each of the arrays has VCSELs with a different aperture size than the aperture size of VCSELs of the other arrays.4. The illuminator of wherein one of the arrays has VCSELs with apertures of about 2 μm and another array of VCSELs with apertures of about 3 or 4 μm.5. The illuminator of wherein the largest aperture is 4 μm for any one of the arrays.6. The illuminator of comprising four of the arrays arranged 2×2 and where each diagonally arranged pair of arrays has the same aperture size and that is different than the other diagonally arranged pair of arrays.7. The illuminator of comprising a polarizing metalayer disposed on individual VCSELs in the arrays claim 1 , wherein each metalayer having an arrangement of spaced sub-wavelength light scattering posts elongated in top view to act as polarizers claim 1 , and wherein the metalayers on VCSELs in one array have posts generally extending in a different direction than the posts of another of the arrays.8. The illuminator of wherein arrays with the same aperture size have metalayers with posts elongated in a same first direction while arrays with a different aperture size have metalayers with posts elongated in a different direction than the first direction.9. The illuminator of wherein each coupling of metalayer and VCSEL the metalayer is upon is arranged to cooperatively form a ...

METHOD FOR DRIVING LIGHT SOURCE APPARATUS AND SURFACE EMITTING LASER, AND IMAGE ACQUIRING APPARATUS

A light source apparatus includes a surface emitting laser including a movable mirror, a mirror arranged opposite to the movable mirror, and an active layer arranged between the two mirrors, a mirror driving unit configured to move the movable mirror to a position where laser oscillation is not performed, a laser driving unit configured to inject current into the surface emitting laser, a storage unit configured to store position information of the movable mirror, the position information including a mirror position where laser oscillation is not performed and a mirror position where laser oscillation is performed, and a control unit configured to control the laser driving unit and to determine start timing of the current injection into the surface emitting laser according to the position information output from the storage unit. 1. A light source apparatus comprising:a surface emitting laser including a movable mirror, a mirror arranged opposite to the movable mirror, and an active layer arranged between the two mirrors;a mirror driving unit configured to move the movable mirror to a position where laser oscillation is not performed;a laser driving unit configured to inject current into the surface emitting laser;a storage unit configured to store position information of the movable mirror, the position information including a mirror position where laser oscillation is not performed and a mirror position where laser oscillation is performed; anda control unit configured to control the laser driving unit and to determine start timing of the current injection into the surface emitting laser according to the position information output from the storage unit.2. The light source apparatus according to claim 1 , whereinthe laser driving unit is configured to start the current injection into the surface emitting laser after the movable mirror has moved to a position where a wavelength with no light emitting gain becomes a resonant wavelength of the surface emitting laser, ...

SURFACE LIGHT-EMITTING LASER AND OPTICAL COHERENCE TOMOGRAPHIC IMAGING APPARATUS HAVING THE SAME

A surface light-emitting laser comprising an upper reflector, a lower reflector, and an active layer interposed therebetween, wherein when an optical distance between the upper reflector and the lower reflector is referred to as a first distance, and an optical distance between the lower reflector and the active layer is referred to as a second distance, positions of at least selected two of a group including the upper reflector, the lower reflector, and the active layer are changed so that the ratio between the first distance and the second distance is maintained within a range of ±25% from a certain value. 1. A laser comprising an upper reflector , a lower reflector , and an active layer interposed therebetween , wherein when an optical distance between the upper reflector and the lower reflector is referred to as a first distance , and an optical distance between the lower reflector and the active layer is referred to as a second distance ,positions of at least selected two of a group including the upper reflector, the lower reflector, and the active layer are changed so that a ratio between the first distance and the second distance is maintained within a range of ±25% from a certain value.2. The laser according to claim 1 , wherein the ratio between the first distance and the second distance is configured to be kept within a range of ±20% from a certain value.3. The laser according to claim 1 , wherein the ratio between the first distance and the second distance is kept within a range of ±5% from a certain value.4. The laser according to claim 1 , wherein the upper reflector and the lower reflector are displaced at a same cycle and in opposite phases.5. The laser according to claim 1 , wherein the ratio between the first distance and the second distance is configured to be kept as an integer ratio.6. The laser according to claim 1 , wherein the upper reflector and the lower reflector are displaced at same amplitude claim 1 , and the active layer is arranged at ...

VERTICAL CAVITY SURFACE EMITTING LASER, METHOD FOR FABRICATING VERTICAL CAVITY SURFACE EMITTING LASER

A vertical cavity surface emitting laser includes: an active layer; a first laminate for a first distributed Bragg reflector; and a first intermediate layer disposed between the active layer and the first laminate. The first intermediate layer has first and second portions. The first laminate, the first and second portions of the first intermediate layer, and the active layer are arranged along a direction of a first axis. The first laminate and the first portion of the first intermediate layer each include a first dopant. The active layer has a first-dopant concentration of less than 1×10cm. The first portion of the first intermediate layer has a first-dopant concentration smaller than that of the first laminate. The second portion of the first intermediate layer has a first-dopant concentration smaller than that of the first portion of the first intermediate layer. 1. A vertical cavity surface emitting laser comprising:an active layer;a first laminate for a first distributed Bragg reflector; anda first intermediate layer disposed between the active layer and the first laminate,the first intermediate layer having a first portion and a second portion,the first laminate, the first portion and the second portion of the first intermediate layer, and the active layer being arranged along a direction of a first axis,the first laminate and the first portion of the first intermediate layer each including a first dopant,{'sup': 16', '−3, 'the active layer having a concentration of the first dopant of less than 1×10cm,'}the first portion of the first intermediate layer extending from the first laminate to the second portion of the first intermediate layer,the second portion of the first intermediate layer extending from the first portion of the first intermediate layer to the active layer,the first portion of the first intermediate layer having a concentration of the first dopant smaller than that of the first laminate, andthe second portion of the first intermediate layer ...

SEMICONDUCTOR MODIFICATION PROCESS AND STRUCTURES

There is herein described a process for providing improved device performance and fabrication techniques for semiconductors. More particularly, the present invention relates to a process for forming features, such as pixels, on GaN semiconductors using a p-GaN modification and annealing process. The process also relates to a plasma and thermal anneal process which results in a p-GaN modified layer where the annealing simultaneously enables the formation of conductive p-GaNand modified p-GaN regions that behave in an n-like manner and block vertical current flow. The process also extends to Resonant-Cavity Light Emitting Diodes (RCLEDs), pixels with a variety of sizes and electrically insulating planar layer for electrical tracks and bond pads. 1. A fabrication process for electronic components comprising the following steps:depositing a mask feature onto a GaN p-layer to form a structure wherein some areas of the structure are protected by the mask feature and others are not, forming unprotected mask regions; andwherein processing of unprotected mask regions is capable of forming areas with modified electrical characteristics.2. A fabrication process for electronic components according to claim 1 , wherein the processing of unprotected mask regions causes a reversal in the effective doping of the p-GaN regions such that it behaves as n-doped GaN.3. A fabrication process for electronic components according to claim 1 , wherein the process comprises:exposing the structure to a plasma treatment;wherein the areas not protected by the mask feature are exposed to the plasma treatment and form modified n-doped behaving regions due to the plasma and the areas protected by the mask are shielded from the plasma treatment and remain unmodified p-GaN.4. A fabrication process for electronic components according to claim 3 , wherein after plasma treatment claim 3 , an annealing process is applied to the structure claim 3 , and wherein optionally the mask is removed or retained ...

OPTICAL AMPLIFIER

An optical amplifier is described. The optical amplifier () comprises a semiconductor disk gain medium () including at least one quantum well layer () and a pump field source () for generating an optical pump field () for the semiconductor disk gain medium. The optical amplifier acts to generate an output optical field () from an input optical field () received by the optical amplifier and arranged to be incident upon the semiconductor disk gain medium. Employing a semiconductor disk gain medium within the optical amplifier allows it to be optically pumped and thus provided for increased stability and beam quality of the output optical field while allowing for the design of optical amplifiers which can operate across a broad range of wavelengths. The optical amplifier may be employed with continuous wave or pulsed input optical fields. 1) An optical amplifier comprising a semiconductor disk gain medium that includes at least one quantum well layer; and a pump field source for generating an optical pump field for the semiconductor disk gain medium wherein the optical amplifier generates an output optical field from an input optical field received by the optical amplifier and arranged to be incident upon the semiconductor disk gain medium.2) An optical amplifier as claimed in wherein the semiconductor disk gain medium is mounted on a reflector.3) An optical amplifier as claimed in wherein the reflector comprises a Distributed Bragg Reflector (DBR).4) An optical amplifier as claimed in wherein the pump field source comprises a diode laser.5) An optical amplifier as claimed in wherein the input optical field comprises a continuous wave optical field.6) An optical amplifier as claimed in wherein the input optical field comprises a pulsed optical field.7) An optical amplifier as claimed in further comprising one or more steering optics arranged to form an input optical field resonator that provides a means for the input optical field to be incident upon the semiconductor ...

LIGHT-EMITTING DEVICE

A light-emitting device is provided. The light-emitting device comprises: an epitaxial structure comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence; an electrode on the epitaxial structure; a current blocking layer between the contact layer and the electrode; a first opening formed in the current blocking layer; and a second opening formed in the electrode and within the first opening; wherein a part of the electrode fills in the first opening and contacts the contact layer. 1. A light-emitting device comprising:an epitaxial structure comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence;an electrode on the epitaxial structure;a current blocking layer between the contact layer and the electrode;a first opening formed in the current blocking layer; anda second opening formed in the electrode and within the first opening;wherein a part of the electrode fills in the first opening and contacts the contact layer.2. The light-emitting device according to claim 1 , further comprising a substrate under the epitaxial structure claim 1 , wherein the substrate has a first width claim 1 , the epitaxial structure comprises a ridge having a width smaller than the first width of the substrate and comprises an exposed mesa wall claim 1 , and the current blocking layer covers the exposed mesa wall.3. The light-emitting device according to claim 2 , wherein the electrode covers the exposed mesa wall claim 2 , and wherein the current blocking layer is between the exposed mesa wall and the electrode.4. The light-emitting device according to claim 1 , wherein each layer of the second DBR stack consists essentially of a Group III-V semiconductor material5. The light-emitting device according to claim 1 , wherein the conductivity of a portion of the second DBR stack right under the first opening is substantially the same as the conductivity of the other portion of the second DBR ...

SURFACE-EMITTING LASER

A surface-emitting laser includes a substrate having a principal surface; an active layer provided on the principal surface of the substrate; a first stacked layer provided on the active layer, the first stacked layer serving as a first distributed Bragg reflector; a first contact layer disposed between the active layer and the first stacked layer; a post provided on the principal surface of the substrate, the post including the active layer, the first contact layer, and the first stacked layer, the post having an upper surface, a side surface inclined relative to the substrate principle surface, and a lower end; and a first electrode that contacts the first contact layer at the side surface of the post. 1. A surface-emitting laser comprising:a substrate having a principal surface;an active layer provided on the principal surface of the substrate;a first stacked layer provided on the active layer, the first stacked layer serving as a first distributed Bragg reflector;a first contact layer disposed between the active layer and the first stacked layer;a post provided on the principal surface of the substrate, the post including the active layer, the first contact layer, and the first stacked layer, the post having an upper surface, a side surface, and a lower end; anda first electrode that contacts the first contact layer at the side surface of the post.2. The surface-emitting laser according to claim 1 , further comprising:an intermediate stacked layer provided between the first contact layer and the active layer,wherein the first contact layer has a side surface that constitutes a portion of the side surface of the post, andthe side surface of the first contact layer extends from an edge at a boundary between the first contact layer and the first stacked layer to an edge at a boundary between the first contact layer and the intermediate stacked layer.3. The surface-emitting laser according to claim 1 , wherein the side surface of the post is widened out in a ...

Distributed feedback surface emitting laser

A semiconductor surface emitting laser (SEL) includes an active zone comprising quantum well structures separated by spacer layers. The quantum well structures are configured to provide optical gain for the SEL at a lasing wavelength, λ lase . Each quantum well structure and an adjacent spacer layer are configured to form an optical pair of a distributed Bragg reflector (DBR). The active zone including a plurality of the DBR optical pairs is configured to provide optical feedback for the SEL at λ lase .

SURFACE EMITTING LASER ELEMENT AND ATOMIC OSCILLATOR

A surface emitting laser element includes a lower DBR formed on a substrate; an active layer formed above the lower DBR; an upper DBR formed on the active layer. The upper DBR includes a dielectric multilayer that is formed as a result of dielectrics having different refractive indexes being alternately laminated and formed, a light shielding part is formed above the upper DBR, and the light shielding part has an opening at a central area for emitting light. 1. A surface emitting laser element , comprising:a lower DBR formed on a substrate;an active layer formed above the lower DBR;an upper DBR formed above the active layer, whereinthe upper DBR includes a dielectric multilayer that is made of dielectrics having different refractive indexes being alternately laminated and formed,a light shielding part is formed above the upper DBR, andthe light shielding part has an opening at a central area for emitting light.2. The surface emitting laser element as claimed in claim 1 , wherein{'sup': '2', 'light emitted from the opening has a divergence angle, at which intensity of the light becomes 1/e, greater than or equal to 20 degrees.'}3. The surface emitting laser element as claimed in claim 1 , wherein{'sup': '2', 'an area of the opening is less than or equal to 30 μm.'}4. The surface emitting laser element as claimed in claim 1 , wherein{'sup': '2', 'an area of the opening is less than or equal to 20 μm.'}5. The surface emitting laser element as claimed in claim 1 , whereinthe light shielding part is made of a metallic material or a material that absorbs the light.6. The surface emitting laser element as claimed in claim 1 , further comprising:a contact layer formed between the active layer and the dielectric multilayer of the upper DBR, whereinone electrode is connected with the contact layer.7. The surface emitting laser element as claimed in claim 1 , further comprising:a wavelength adjustment layer between the active layer and the dielectric multilayer of the upper ...

Optical modulator having reflection layers

An optical modulator is provided, including a lower reflection layer, an active layer formed on the lower reflection layer, and an upper reflection layer formed on the active layer. The active layer includes a multiple quantum well structure including a quantum well layer and a quantum barrier layer. The upper reflection layer includes a dielectric material. A plurality of micro cavity layers are included in the upper reflection layer.

DIODE LASER PACKAGES WITH FLARED LASER OSCILLATOR WAVEGUIDES

A high brightness diode laser package includes a plurality of flared laser oscillator waveguides arranged on a stepped surface to emit respective laser beams in one or more emission directions, a plurality of optical components situated to receive the laser beams from the plurality of flared laser oscillator waveguides and to provide the beams in a closely packed relationship, and an optical fiber optically coupled to the closely packed beams for coupling the laser beams out of the diode laser package. 1. A high brightness diode laser package , comprising:a plurality of flared laser oscillator waveguides arranged on a stepped surface to emit respective laser beams in one or more emission directions;a plurality of optical components situated to receive the laser beams from said plurality of flared laser oscillator waveguides and to provide the beams in a closely packed relationship; andan optical fiber optically coupled to the closely packed beams for coupling the laser beams out of the diode laser package.2. The package of wherein said plurality of flared laser oscillator waveguides includes a first set of three or more of said flared laser oscillator waveguides arranged on a first stepped surface portion of said stepped surface at successive heights thereof such that a first set of beams is emitted parallel to each other and said first stepped surface portion in a first stepped configuration in a first emission direction;wherein said plurality of optical components includes a first set of optical components associated with said first set of three or more flared laser oscillator waveguides, said first set of optical components including fast-axis collimation optics and slow-axis collimation optics for collimating the respective fast and slow axes of the first set of beams and beam-turning optics coupled to each first set beam so as to provide each first set beam in a first set turn direction such that the first stepped configuration of beams becomes a first stacked ...

SEMICONDUCTOR LASER DEVICE

This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM which is optically connected to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer , a pair of cladding layers and sandwiching the active layer , and a diffraction grating layer which is optically connected to the active layer . The spatial light modulator SLM includes a transparent common electrode , a plurality of transparent pixel electrodes , a liquid crystal layer LC arranged between the common electrode and the pixel electrodes . A laser beam output in a thickness direction of the diffraction grating layer is modulated by the spatial light modulator SLM, passes therethrough, and is output to the outside. 1. A semiconductor laser device comprising:a semiconductor laser chip; anda spatial light modulator which is optically connected to the semiconductor laser chip, wherein an active layer,', 'a pair of cladding layers sandwiching the active layer, and', 'a diffraction grating layer which is optically connected to the active layer, and, 'the semiconductor laser chip includes'} a transparent common electrode,', 'a plurality of transparent pixel electrodes, and', 'a liquid crystal layer arranged between the common electrode and the pixel electrodes,, 'the spatial light modulator includes'}the spatial light modulator being attached to the semiconductor laser chip in such a manner that a laser beam output in a thickness direction of the diffraction grating layer is input, modulating a phase of the laser beam in each minute region with a driving voltage applied between the pixel electrodes and the common electrode, and transmitting and outputting, to the outside, the laser beam the phase of which is modulated.2. The semiconductor laser device according to claim 1 , further comprising a selection circuit which is arranged on the semiconductor laser chip and which is configured to supply the driving voltage selectively between one of ...

SURFACE-EMITTING SEMICONDUCTOR LASER, METHOD FOR PRODUCING THE SAME, SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING DEVICE

A surface-emitting semiconductor laser includes a first semiconductor multilayer film reflector, an active region, a second semiconductor multilayer film reflector, and a current confinement layer including an oxidized region formed by selective oxidation. The current confinement layer includes a first semiconductor layer having a relatively high Al content, a second semiconductor layer that is adjacent to the first semiconductor layer on an active-region side of the first semiconductor layer and has a lower Al content than the first semiconductor layer, and a composition-gradient layer adjacent to the first semiconductor layer on a side of the first semiconductor layer which is opposite to the active-region side. A portion of the composition-gradient layer which faces the first semiconductor layer has a lower Al content than the first semiconductor layer. 1. A surface-emitting semiconductor laser comprising:a first semiconductor multilayer film reflector;an active region;a second semiconductor multilayer film reflector; anda current confinement layer including an oxidized region formed by selective oxidation, a first semiconductor layer having a relatively high Al content,', 'a second semiconductor layer adjacent to the first semiconductor layer, the second semiconductor layer being disposed on an active-region side of the first semiconductor layer, the second semiconductor layer having a lower Al content than the first semiconductor layer, and', 'a composition-gradient layer adjacent to the first semiconductor layer, the composition-gradient layer being disposed on a side of the first semiconductor layer which is opposite to the active-region side on which the second semiconductor layer is disposed, and, 'wherein the current confinement layer includes'}wherein a portion of the composition-gradient layer which faces the first semiconductor layer has a lower Al content than the first semiconductor layer.2. The surface-emitting semiconductor laser according to claim ...

HIGH-EFFICIENCY OXIDE VCSEL MANUFACTURING METHOD THEREOF

The present invention relates to a vertical cavity surface emitting laser (VCSEL) and a manufacturing method thereof, and more specifically, to a high-efficiency oxidation VCSEL which emits laser beams having a peak wavelength of 860 nm, and a manufacturing method thereof. 1. An oxide vertical cavity surface emitting laser (VCSEL) having a conductive current spreading layer formed between a top electrode and a top distributed Bragg reflector to pass laser having a peak wavelength of 860±10 nm.2. The VCSEL according to claim 1 , wherein the conductive current spreading layer is a non-oxidizing barrier layer.3. The VCSEL according to claim 2 , wherein the non-oxidizing barrier layer is an Al-free layer.4. The VCSEL according to claim 1 , wherein the current spreading layer is a GaP layer.5. The VCSEL according to claim 1 , wherein the GaP layer includes a metallic and/or non-metallic dopant.6. The VCSEL according to claim 5 , wherein the dopant is selected from a group including Mg claim 5 , Zn and carbon as the dopant.7. The VCSEL according to claim 5 , wherein the GaP layer has a thickness of 1 μm or larger.8. The VCSEL according to claim 1 , wherein the VCSEL includes a bottom electrode claim 1 , a substrate claim 1 , a bottom distributed Bragg reflector claim 1 , an active layer claim 1 , a top distributed Bragg reflector claim 1 , a top electrode and an oxidized layer.9. The VCSEL according to claim 8 , wherein the active layer is configured of a GaAs quantum well and an AlGaAs quantum barrier layer.10. The VCSEL according to claim 8 , wherein the thickness of the GaP is 3 μm.11. The VCSEL according to claim 8 , wherein the oxidized layer is positioned between layers of a top p-DBR.12. The VCSEL according to claim 8 , wherein the oxide CSEL operates at a current of 10 to 40 mA.13. The VCSEL according to claim 8 , wherein the top electrode is a transparent electrode selected among indium tin oxide (ITO) claim 8 , ZnO and AZO.14. The VCSEL according to claim 8 , ...

High-efficiency oxide vcsel with improved light extraction, and manufacturing method thereof

The present invention relates to a vertical cavity surface emitting laser (VCSEL) and a manufacturing method thereof, and more specifically, to a high-efficiency oxide VCSEL which emits laser beams having a peak wavelength of 860 nm, and a manufacturing method thereof.

TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICES AND INTEGRATED PHOTONICS SYSTEM

Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser. 1. A method , comprising:patterning and etching a germanium layer to form a germanium fin extending above a substrate region;forming compressive stressors on side walls of the germanium fin to impart uniaxial tensile strain in the germanium fin in a direction orthogonal to a plane defined by said substrate region, said compressive stressors formed by depositing a conformal blanket layer of compressively stressed silicon nitride over the germanium fin and then etching the deposited silicon nitride from a top region of the germanium fin, thereby exposing a top surface of the germanium fin.2. The method of claim 1 , wherein the substrate region comprises a remaining portion of the germanium layer.3. The method of claim 1 , wherein the germanium layer is a layer on an insulator.4. The method of claim 1 , further comprising etching one or more cuts into at least one of the silicon nitride compressive stressors along a length of the germanium fin claim 1 , making the at least one silicon nitride compressive stressor discontinuous along the length of the germanium fin.5. The method of claim 4 , wherein at least one of the one or more cuts extends through the germanium fin.6. The method of claim 1 , further comprising forming an n-type doped polycrystalline semiconductor layer on the top surface of the germanium fin and performing an anneal claim 1 , thereby diffusing n-type dopants into the germanium fin.7. The method of claim 6 , ...

RESONANT CAVITY STRAINED GROUP III-V PHOTODETECTOR AND LED ON SILICON SUBSTRATE AND METHOD TO FABRICATE SAME

A structure includes an optoelectronic device having a Group IV substrate (e.g., Si); a buffer layer (e.g. SiGe) disposed on the substrate and a first distributed Bragg reflector (DBR) disposed on the buffer layer. The first DBR contains alternating layers of doped Group IV materials (e.g., alternating layers of SiGe, where 0.8 Подробнее

BACK-SIDE-EMITTING VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL) WAFER BONDED TO A HEAT-DISSIPATION WAFER, DEVICES AND METHODS

A wafer-to-wafer bonded arrangement is provided comprising a VCSEL wafer and a highly thermally-conductive (HTC) wafer that are bonded together with the front side of the VCSEL wafer bonded to the HTC wafer. The VCSEL wafer is fabricated to include, at least initially, a native substrate. The HTC wafer includes a thermally-conductive, non-native substrate. All or a portion of the native substrate may be removed after performing wafer-to-wafer bonding. In effect, the HTC wafer becomes the substrate of the bonded pair. During operation of VCSEL dies diced from the bonded wafer, heat generated by the dies flows into the non-native substrate where the heat spreads out and is dissipated. Laser light generated by the VCSEL die is emitted through the back side of the VCSEL die. 1. A wafer-to-wafer bonded arrangement comprising:a highly thermally-conductive (HTC) wafer, the HTC wafer comprising a non-native substrate; and an epitaxial (epi) structure having a first side and a second side, the epi structure comprising a first distributed Bragg reflector (DBR) adjacent the second side of the epi structure, a second DBR adjacent the first side of the epi structure, and one or more layers comprising a quantum well (QW) region disposed in between the first DBR and the second DBR, the first DBR having a first electrical conductivity type and the second DBR having a second electrical conductivity type that is different from the first electrical conductivity type; and', 'a first contact metal layer disposed on the front side of the VCSEL wafer and in contact with the first DBR, the first contact metal layer being bonded to a top surface of the HTC wafer, wherein the VCSEL wafer has a plurality of first trenches formed therein that pass through the first contact metal layer, through the second side of the epi structure and extend a distance into the epi structure without passing through the epi structure., 'a vertical cavity surface emitting laser (VCSEL) wafer having a front side ...

METHOD FOR PRODUCING LIGHT-EMITTING DEVICE

A method for producing a light-emitting device includes oxidizing a current confinement layer containing Al by steam oxidation from a side face of a light-emitting element portion including the current confinement layer to form a current confinement structure in the light-emitting element portion; heating the light-emitting element portion to about 150° C. or higher and about 400° C. or lower at reduced pressure for a predetermined heating time while the oxidized current confinement layer is exposed at the side face; and after the light-emitting element portion is heated, forming a protective film on the side face. 1. A method for producing a light-emitting device , comprising:oxidizing a current confinement layer containing Al by steam oxidation from a side face of a light-emitting element portion including the current confinement layer to form a current confinement structure in the light-emitting element portion;heating the light-emitting element portion to about 150° C. or higher and about 400° C. or lower at reduced pressure for a predetermined heating time while the oxidized current confinement layer is exposed at the side face; andafter the light-emitting element portion is heated, forming a protective film on the side face.2. The method according to claim 1 , wherein the light-emitting element portion is heated to a temperature at which aluminum hydroxide in the current confinement layer is converted into aluminum oxide.3. The method according to claim 1 , wherein the light-emitting element portion is heated in an inert gas atmosphere.4. The method according to claim 1 , wherein the light-emitting element portion is heated by replacing claim 1 , with an inert gas claim 1 , a gas in an oxidation furnace where a wafer including the light-emitting element portion formed thereon is held and by heating the wafer at reduced pressure.5. The method according to claim 1 , wherein the protective film is formed on the side face by chemical vapor deposition while being ...

High Resolution Structured Light Source

A structured light source comprising VCSEL arrays is configured in many different ways to project a structured illumination pattern into a region for 3 dimensional imaging and gesture recognition applications. One aspect of the invention describes methods to construct densely and ultra-densely packed VCSEL arrays with to produce high resolution structured illumination pattern. VCSEL arrays configured in many different regular and non-regular arrays together with techniques for producing addressable structured light source are extremely suited for generating structured illumination patterns in a programmed manner to combine steady state and time-dependent detection and imaging for better accuracy. Structured illumination patterns can be generated in customized shapes by incorporating differently shaped current confining apertures in VCSEL devices. Surface mounting capability of densely and ultra-densely packed VCSEL arrays are compatible for constructing compact on-board 3-D imaging and gesture recognition systems. 1. A projection apparatus for generating high resolution structured illumination pattern comprising:an optical source including one or more VCSEL arrays, wherein each VCSEL array including at least 5000, but no more than 500,000 VCSEL devices separated from adjacent VCSEL devices by a distance that is no more than 5 μm is configured to generate a desired one or more high resolution structured illumination patterns, and wherein each VCSEL array has an area proportional to the size of the VCSEL array; anda projection device including at least one optical element to magnify and project the desired one or more illumination patterns on to an area distal to the optical source.2. The projection apparatus as in claim 1 , wherein the VCSEL devices comprise a planar device structure that includes a two-reflector claim 1 , extended cavity three-reflector and external cavity three-reflector configurations that are wafer scale integrated using methods selected from a ...

LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure. 1. A light-emitting device comprising:a light-emitting structure, at least an upper portion of the light-emitting structure has a columnar configuration;a surrounding structure surrounding the light-emitting structure;at least two connecting structures, each of the connecting structures being connected to the light-emitting structure and the surrounding structure, at least two gaps are disposed between the light-emitting structure and the surrounding structure, and each of the gaps are extending along a side surface of the columnar configuration of the light emitting structure;an upper electrode; anda compound-semiconductor surface consisting of compound semiconductor material; a light-emitting-structure active region having an active-region compositional layer configuration;', 'a light-emitting-structure first region disposed above a substrate of the light-emitting device and below the light-emitting-structure active region, the light-emitting structure first region having a first-region compositional layer configuration;', a first portion of the light-emitting-structure second region having a second ...

Resonant Cavity Strained Group III-V Photodetector And LED On Silicon Substrate And Method To Fabricate Same

A structure includes an optoelectronic device having a Group IV substrate (e.g., Si); a buffer layer (e.g. SiGe) disposed on the substrate and a first distributed Bragg reflector (DBR) disposed on the buffer layer. The first DBR contains alternating layers of doped Group IV materials (e.g., alternating layers of SiGe, where 0.8 Подробнее

VERTICAL CAVITY SURFACE EMITTING LASER, METHOD FOR FABRICATING VERTICAL CAVITY SURFACE EMITTING LASER

A vertical cavity surface emitting laser includes: a supporting base: and a post including an upper distributed Bragg reflecting region, an active layer, and a lower distributed Bragg reflecting region. The upper distributed Bragg reflecting region, the active layer, and the lower distributed Bragg reflecting region are arranged on the supporting base. The lower distributed Bragg reflecting region includes first semiconductor layers and second semiconductor layers alternately arranged. The first semiconductor layers each have a refractive index lower than that of each of the second semiconductor layers. The upper distributed Bragg reflecting region includes first layers and second layers alternately arranged. The first layers each have a group III-V compound semiconductor portion and a group III oxide portion. The group III-V compound semiconductor portion contains aluminum as a group III constituent element, and the group III oxide portion surrounds the group III-V compound semiconductor portion. 1. A vertical cavity surface emitting laser comprising:a supporting base: anda post including an upper distributed Bragg reflecting region, an active layer, and a lower distributed Bragg reflecting region, and the upper distributed Bragg reflecting region, the active layer, and the lower distributed Bragg reflecting region being arranged on the supporting base,the lower distributed Bragg reflecting region including first semiconductor layers and second semiconductor layers alternately arranged,the first semiconductor layers each having a refractive index lower than that of each of the second semiconductor layers,the upper distributed Bragg reflecting region including first layers and second layers alternately arranged,the first layers each having a group III-V compound semiconductor portion and a group III oxide portion,the group III-V compound semiconductor portion containing aluminum as a group III constituent element, andthe group III oxide portion surrounding the group ...

High-Speed VCSEL Device

A Vertical Cavity Surface Emitting Laser (VCSEL) includes a reflecting surface of the VCSEL. A gain region is positioned on the distributed Bragg reflector that generates optical gain. The gain region comprises a first and second multiple quantum well stack, a tunnel junction positioned between the first and second multiple quantum well stack, and a current aperture positioned on one of the first and second multiple quantum well stack. The current aperture confines a current flow in the gain region. A partially reflective surface and the reflective surface forming a VCSEL resonant cavity, wherein an output optical beam propagates from the partially reflecting surface. 1. A Vertical Cavity Surface Emitting Laser (VCSEL) comprising:a) a reflecting surface of the VCSEL; i. a first and second multiple quantum well stack;', 'ii. a tunnel junction positioned between the first and second multiple quantum well stack; and', 'iii. a current aperture positioned on one of the first and second multiple quantum well stack, the current aperture confining a current flow in the gain region; and, 'b) a gain region positioned on the reflective surface that generates optical gain, the gain region comprising 'wherein at least one of the reflecting surface or the partially reflective surface comprises a sub-wavelength grating structure.', 'c) a partially reflective surface, the reflective surface, and the partially reflective surface forming a VCSEL resonant cavity, wherein an output optical beam propagates from the partially reflecting surface,'}2. (canceled)3. (canceled)4. The VCSEL of wherein the reflecting surface comprises a sub-wavelength grating structure.5. The VCSEL of wherein the partially reflecting surface comprises a sub-wavelength grating structure.6. The VCSEL of wherein the reflecting surface comprises a combination of a distributed Bragg reflector and a sub-wavelength grating structure.7. (canceled)8. (canceled)9. (canceled)10. The VCSEL of wherein the partially ...

SURFACE-EMITTING LASER STRUCTURE WITH HIGH HEAT DISSIPATION

The present invention comprises a thermally-conductive and electrically-conductive substrate, a bonding layer, a galvanic isolation layer, a P-type electrode, a P-type Bragg reflection layer, a diode light-emitting layer, an N-type Bragg band-pass reflection layer and an N-type electrode stacked in sequence. The galvanic isolation layer comprises a cylindrical opening for accommodating the diode light-emitting layer. The N-type electrode comprises a light-output opening facing the cylindrical opening and completely covering the cylindrical opening. When current input by the N-type electrode passes through the N-type Bragg band-pass reflection layer, it is concentrated under constraint of the galvanic isolation layer and passes through the diode light-emitting layer via the cylindrical opening according to correspondence in position and size of the cylindrical opening and the light-output opening. Thus, light-emitting efficiency, response speed, and the effective light-emitting area are increased effectively, without use of an oxidized metal layer. 1. A surface-emitting laser structure with high heat dissipation , comprising:a thermally-conductive and electrically-conductive substrate;a bonding layer disposed on the thermally-conductive and electrically-conductive substrate;a galvanic isolation layer disposed on the bonding layer, comprising a cylindrical opening;a P-type electrode disposed in the cylindrical opening and located on the bonding layer;a P-type Bragg reflection layer disposed on the P-type electrode and located in the cylindrical opening;a diode light-emitting layer located in the cylindrical opening, and disposed on the P-type Bragg reflection layer;an N-type Bragg band-pass reflection layer disposed on the diode light-emitting layer, filling the cylindrical opening and covering the galvanic isolation layer;an N-type electrode disposed on the N-type Bragg band-pass reflection layer, comprising a light-output opening facing the cylindrical opening, a ...

VERTICAL CAVITY SURFACE EMITTING LASER DEVICE

A vertical cavity surface emitting laser (VCSEL) device includes a bottom distributed Bragg reflector (DBR); a top DBR; an optical cavity with an active layer stack formed between the bottom DBR and the top DBR, arranged for generating light with a predetermined emission wavelength; a top electrode layer with a first window formed above the top DBR; and a first heat dissipation layer sandwiched between the top DBR and the top electrode layer. The VCSEL device utilizes thicker, heavily doped semiconductor contact window for efficient heat dissipation from active region. Besides heat dissipation on the top side of VCSEL device, it also increases the bandwidth of VCSEL through top DBR reflectivity changes that reduce the photon lifetime via a surface relief structure etching on the top side of VCSEL device. Further, the invented VCSEL contains adjusted Aluminium molefractions in multiple sections of top and bottom DBRs to effectively dissipate heat from active region of VCSEL. Thus, proposed VCSEL device maintains lower junction temperature for achieving stable high-speed operations at high ambient temperature, thereby improving its performance. 1. A vertical cavity surface emitting laser device comprising:a bottom distributed Bragg reflector;a top distributed Bragg reflector;an active layer formed between the bottom distributed Bragg reflector and the top distributed Bragg reflector, arranged for generating laser light with a predetermined emission wavelength;at least one oxide section formed between top distributed Bragg reflector and active layer;a top electrode layer with a first window exposed formed above the top distributed Bragg reflector;a first heat dissipation layer sandwiched between the top distributed Bragg reflector and the top electrode layer; anda contact layer formed between the top electrode layer and the first heat dissipation layer, and a graded index layer formed between the top distributed Bragg reflector and the first heat dissipation layer.2. ...

LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure. 1. A light-emitting element comprising:a light-emitting structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order,wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the light-emitting structure, an upper surface of the light-emitting structure being a first portion of a semiconductor surface consisting of a compound semiconductor material, and at least an upper portion of the light-emitting structure has a columnar configuration;a surrounding structure disposed so as to surround the light-emitting structure,wherein the surrounding structure includes the same layer structure as a portion of the light-emitting structure in which the insulation region is provided, and an upper surface of the surrounding structure being a second portion of the semiconductor surface;a plurality of connecting ...

SURFACE EMITTING QUANTUM CASCADE LASER

A surface emitting quantum cascade laser includes an active layer and a first semiconductor layer. The active layer includes a plurality of quantum well layers and is capable of emitting laser light by intersubband transition. The first surface includes an internal region and an outer peripheral region. Grating pitch of the first pits is m times grating pitch of the second pits. The outer peripheral region surrounds the internal region. A first planar shape of an opening end of the first pit is asymmetric with respect to a line passing through barycenter of the first planar shape and is parallel to at least one side of the first two-dimensional grating. A second planar shape of an opening end of the second pit is symmetric with respect to each of lines passing through barycenter of the second planar shape and is parallel to either side of the second two-dimensional grating. 1. A surface emitting quantum cascade laser comprising:an active layer including a plurality of quantum well layers stacked therein and being capable of emitting laser light by intersubband transition; anda first semiconductor layer provided on the active layer and having a first surface, the first surface including an internal region in which first pits constitute a first two-dimensional grating and an outer peripheral region in which second pits constitute a second two-dimensional grating, grating pitch of the first pits being m times (where m being an integer of 1 or more) grating pitch of the second pits, and the outer peripheral region surrounding the internal region,a first planar shape of an opening end of the first pit being asymmetric with respect to a line passing through barycenter of the first planar shape and being parallel to at least one side of the first two-dimensional grating,a second planar shape of an opening end of the second pit being symmetric with respect to each of lines passing through barycenter of the second planar shape and being parallel to either side of the second ...

MONOLITHICALLY INTEGRATED NANOEMITTER LIGHT SOURCE ASSEMBLY

Low-cost and high-efficiency monolithically integrated nanoscale-based light emitter techniques can be used in, for example, electronic display applications and spectroscopy applications using spectrometers. Using various techniques, a light emitter can include quantum dots (QDs) and can be arranged to emit light in mono-band (e.g., one wavelength) or in broad-band (e.g., more than one wavelength) such as in the visible to mid-infrared range, e.g., from about 365 nm to about 10 μm. The light emitter nanotechnology can be based on a nanoscale wafer manufacturing for displays and spectroscopy applications. 1. A monolithically integrated assembly of nanoemitters of light having at least one specified emission wavelength in response to at least one input wavelength generated in the assembly , the assembly comprising:a light emitter configured to generate light in the assembly at the at least one input wavelength in response to an electrical input signal, and a waveguide, including a waveguiding dimension sized to be capable of receiving and guiding light at the at least one input wavelength;', 'a quantum dot arrangement, arranged to receive the at least one input wavelength of light and, in response, to generate responsive light; and', 'a light filter, arranged to receive the responsive light from the quantum dot arrangement and, in response, to emit light from the assembly at a specified emission wavelength and to block light at the at least one input wavelength., 'a plurality of nanoemitters, configured to receive light from the light emitter, an individual one of the nanoemitters including2. The assembly of claim 1 , in which an individual one of the nanoemitters is coupled to:a corresponding transistor, arranged to selectively control light emission from the nanoemitter in response to a control signal received by the transistor.3. The assembly of claim 1 , wherein the at least one input wavelength is less than about 500 nanometers.4. The assembly of claim 1 , ...

Techniques for vertical cavity surface emitting laser oxidation

Some embodiments relate to a method for manufacturing a vertical cavity surface emitting laser. The method includes forming an optically active layer over a first reflective layer and forming a second reflective layer over the optically active layer. Forming a masking layer over the second reflective layer, where the masking layer leaves a sacrificial portion of the second reflective layer exposed. A first etch is performed to remove the sacrificial portion of the second reflective layer, defining a second reflector. Forming a first spacer covering outer sidewalls of the second reflector and masking layer. An oxidation process is performed with the first spacer in place to oxidize a peripheral region of the optically active layer while leaving a central region of the optically active layer un-oxidized. A second etch is performed to remove a portion of the oxidized peripheral region, defining an optically active region. Forming a second spacer covering outer sidewalls of the first spacer, the optically active region, and the first reflector.

HUMAN PLACENTAL COLLAGEN COMPOSITIONS AND METHODS OF MAKING AND USING THE SAME

The present invention provides compositions comprising human placental telopeptide collagen, methods of preparing the compositions, methods of their use and kits comprising the compositions. The compositions, kits and methods are useful, for example, for augmenting or replacing tissue of a mammal. 1. Base-treated , detergent-treated telopeptide collagen.2. The collagen of that is mammalian collagen.3. The collagen of that is bovine claim 1 , ovine or rat collagen.4. The collagen of that is human collagen.5. The collagen of that is placental collagen.6. The collagen of that is human placental collagen.7. The collagen of that is cross-linked.8. The collagen of that is cross-linked with glutaraldehyde.9. Detergent-treated telopeptide collagen comprising a detectable amount of fibronectin.10. The composition of or comprising a plurality of stem cells.11. The composition of wherein the stem cells are embryonic stem cells claim 10 , embryonic germ cells claim 10 , mesenchymal stem cells claim 10 , bone marrow-derived stem cells claim 10 , hematopoietic stem cells from peripheral blood claim 10 , hematopoietic stem cells from fetal blood claim 10 , hematopoietic stem cells from placental blood claim 10 , hematopoietic stem cells from umbilical cord blood claim 10 , hematopoietic stem cells from placental perfusate claim 10 , somatic stem cells claim 10 , neural stem cells claim 10 , hepatic stem cells claim 10 , pancreatic stem cells claim 10 , endothelial stem cells claim 10 , cardiac stem cells claim 10 , muscle stem cells claim 10 , adipose stem cells claim 10 , or CD34 placental stem cells.12. The composition of wherein said CD34 placental stem cells are CD200.13. The composition of wherein said CD34 placental stem cells are:{'sup': +', '+, 'a. CD200 or HLA-G;'}{'sup': +', '+', '+, 'b. CD73, CD105, and CD200;'}{'sup': +', '+, 'c. CD200 and OCT-4;'}{'sup': +', '+', '+', '+', '+, 'd. CD73, CD105 and HLA-G, CD73 and CD105, and, when in a population of placental cells, ...

NONEQUILIBRIUM PULSED FEMTOSECOND SEMICONDUCTOR DISK LASER

A surface-emitting semiconductor laser system contains at least one MQW unit of at least three constituent QWs, separated along the optical axis by a sub-wavelength distance. The MQW unit is located within the axial extent covered, in operation of the laser, by a half-cycle of the standing wave of the field at a wavelength within the gain spectrum of the gain medium; immediately neighboring nodes of the standing wave are on opposite sides of the MQW unit. So-configured MQW unit can be repeated multiple times and/or complemented with individual QWs disposed outside of the half-cycle of the standing wave with which such MQW unit is associated. The semiconductor laser further includes a pump source configured to input energy in the semiconductor gain medium and a mode-locking element to initiate mode-locking. 2. A laser system according to claim 1 , wherein the first MQW unit is positioned asymmetrically between the first and second immediately neighboring nodes.3. A laser system according to claim 1 , further comprising a mode-lock element disposed in the optical resonator in optical communication with the laser chip and configured to define mode-locked pulses of optical radiation inside said optical resonator when said energy is pumped to the laser chip.4. A laser system according to claim 3 , wherein the mode-lock element comprises at least one of a semiconductor saturable absorber mirror element claim 3 , a self-phase modulation Kerr lens element claim 3 , and an active modulation element.5. A laser system according to claim 1 , wherein the first distance is a sub-wavelength distance that is shorter than the first wavelength claim 1 , said laser system being configured to define durations claim 1 , of said mode-locked pulses claim 1 , each of which is shorter that one hundred femtoseconds.6. A laser system according to claim 1 ,wherein two neighboring QWs from said at least three first QWs are separated from one another by first confinement barrier material, the ...

GUIDE TRANSITION DEVICE WITH DIGITAL GRATING DEFLECTORS AND METHOD

A guide transition device including a light source designed to generate a light beam, a light input port on a first plane and coupled to receive the light beam from the light source, a light output port on a second plane different than the first plane, the light output port designed to couple a received light beam to output equipment and plane shifting apparatus coupled to receive the light beam from the light input port on the first plane and to shift or transfer the light beam to the second plane. The plane shifting apparatus including one or more digital gratings each designed to deflect the light beam approximately ninety degrees. The plane shifting apparatus is coupled to transfer the light beam to the light output port on the second plane. 19-. (canceled)10. A guide transition device comprising:a light source designed to generate a light beam;a light input port on a first plane, the light input port being coupled to receive the light beam from the light source;a light output port on a second plane different than the first plane, the light output port designed to couple a received light beam to output equipment; andplane shifting apparatus coupled to receive the light beam from the light input port on the first plane and to shift or transfer the light beam to the second plane, the plane shifting apparatus including one or more digital gratings each designed to deflect the light beam approximately ninety degrees, the plane shifting apparatus being coupled to transfer the light beam to the light output port on the second plane;wherein the plane shifting apparatus includes a first digital grating positioned on the first plane and a second digital grating positioned on the second plane, the first digital grating positioned to receive the light beam from the light input port and to deflect the light beam to the second digital grating, and the second digital grating positioned to deflect the light beam into light communication with the output port.11. The guide ...

HUMAN PLACENTAL COLLAGEN COMPOSITIONS AND METHODS OF MAKING AND USING THE SAME

The present invention provides compositions comprising human placental telopeptide collagen, methods of preparing the compositions, methods of their use and kits comprising the compositions. The compositions, kits and methods are useful, for example, for augmenting or replacing tissue of a mammal. 121-. (canceled)22. A process for preparing an extracellular matrix composition comprising collagen and elastin from mammalian placental tissue , said process comprising the steps of:(a) contacting the mammalian placental tissue with a high osmotic potential solution; and(b) contacting the mammalian placental tissue with a low osmotic potential solution.23. The process of wherein the low osmotic potential solution comprises water with an osmotic potential less than that of 50 mM NaCl.24. The process of wherein the high osmotic potential solution has an osmotic potential of a solution of at least 0.5 M NaCl.2548-. (canceled)49. The process of claim 23 , wherein the low osmotic potential solution is water.50. The process of claim 24 , wherein the high osmotic potential solution comprises at least 1.0M NaCl.51. The process of claim 50 , wherein the high osmotic potential solution comprises at least 2M NaCl.52. The process of claim 22 , wherein the placental tissue comprises human placental tissue.53. The process of claim 22 , wherein the placental tissue comprises a placental amniotic membrane that has been separated from a placental chorionic membrane.54. The process of claim 22 , wherein the placental tissue comprises a placental chorionic membrane that has been separated from a placental amniotic membrane.55. The process of claim 22 , wherein the placental tissue comprises a whole placenta.56. The process of claim 52 , wherein the placental tissue is prepared from a placenta that has been exsanguinated.57. The process of claim 22 , wherein the process further comprises drying the collagen composition.58. The process of claim 57 , wherein the drying comprises vacuum drying ...

Creating arbitrary patterns on a 2-D uniform grid VCSEL array

An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation. 1. An optoelectronic device , comprising:a semiconductor substrate; and first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack;', 'second epitaxial layers formed over the lower DBR stack, defining a quantum well structure;', 'third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and', 'electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell,, 'an array of optoelectronic cells, which are formed on the semiconductor substrate and comprisewherein the array comprises a first set of the optoelectronic cells that are configured to emit laser radiation in response to the excitation current and a second set of the optoelectronic cells, interleaved with the first set, such that at least one element of the optoelectronic cells in the second set, selected from among the epitaxial layers and the electrodes, is physically modified relative to ...

RECONFIGURABLE EMITTER ARRAY

An emitter array may comprise a plurality of vertical-emitting devices. The plurality of vertical-emitting devices may be in a two-dimensional pattern of vertical-emitting devices. The emitter array may further comprise a plurality of electrical contacts on a surface of the emitter array. Each of the plurality of electrical contacts may be co-located with and electrically connected to a corresponding vertical-emitting device of the plurality of vertical-emitting devices. The plurality of electrical contacts may provide mechanical support over the plurality of vertical-emitting devices. The plurality of electrical contacts may extend to approximately a same height. A subset of the plurality of vertical-emitting devices may be powered via a corresponding subset of the plurality of electrical contacts. 1. A vertical cavity surface emitting laser (VCSEL) array , comprising: 'wherein the plurality of VCSELs are in a two-dimensional pattern of VCSELs;', 'a plurality of VCSELs,'} wherein an electrical contact, of the plurality of electrical contacts, is co-located with a corresponding VCSEL of the plurality of VCSELs,', 'wherein the plurality of electrical contacts provides mechanical support to an adjacent element over the plurality of VCSELs,', 'wherein the plurality of electrical contacts extends to approximately a same height,', 'wherein the plurality of electrical contacts has a height that is greater than other elements of the VCSEL array on a same surface as the plurality of electrical contacts; and, 'a plurality of electrical contacts on a surface of the VCSEL array,'} wherein one of the plurality of metal interconnects electrically connects one of the plurality of electrical contacts and one of the plurality of VCSELs that corresponds to the one of the plurality of electrical contacts,', 'wherein a subset of the plurality of VCSELs can be powered via a corresponding subset of the plurality of electrical contacts and a corresponding subset of the plurality of metal ...

LASER-BASED DEVICES UTILIZING IMPROVED SELF-MIX SENSING

A device has a laser unit, which includes: a top-side p-type DBR region; which is on top of and in direct touch with an active region; which is on top of and in direct touch with a bottom-side n-type Distributed Bragg Reflector (DBR) region; which is on top of a n-type substrate. The laser unit further includes a voltage measurement anode touching or being in proximity to a top surface of the active region; and a voltage measurement cathode touching or being in proximity to a bottom surface of the active region. The voltage between the voltage measurement anode and the voltage measurement cathode is directly measured; and is utilized for determining characteristics of a laser self-mix signal of the laser unit, without having or using a monitor photo-diode. 1. A device comprising:a self-mix laser unit comprising:an active region having a first side and a second, opposite, side;a p-type DBR region, which is in direct touch with said first side of said active region;an n-type Distributed Bragg Reflector (DBR) region, which is in direct touch with said second side of said active region;an n-type substrate;a voltage measurement anode that is either touching or is in proximity to said first side of said active region;a voltage measurement cathode that is either touching or is in proximity to said second side of said active region.2. The device of claim 1 , further comprising:an active-voltage measurement unit, which is directly connected to said voltage measurement anode and to said voltage measurement cathode,wherein said active-voltage measurement unit is to directly measure a voltage between said voltage measurement anode and said voltage measurement cathode.3. The device of claim 2 ,wherein said self-mix laser unit transmits an outgoing laser beam towards a remote target, and receives an optical signal reflected back from said remote target;wherein the outgoing laser beam and the reflected optical signal perform self-mix in said self-mix laser unit and produce a laser ...

Vertical-cavity surface-emitting lasers

Vertical-cavity surface-emitting lasers (“VCSELs”) and VCSEL arrays are disclosed. In one aspect, a surface-emitting laser includes a grating layer having a sub-wavelength grating to form a resonant cavity with a reflective layer for a wavelength of light to be emitted from a light-emitting layer and an aperture layer disposed within the resonant cavity. The VCSEL includes a charge carrier transport layer disposed between the grating layer and the light-emitting layer. The transport layer has a gap adjacent to the sub-wavelength grating and a spacer region between the gap and the light-emitting layer. The spacer region and gap are dimensioned to be substantially transparent to the wavelength. The aperture layer directs charge carriers to enter a region of the light-emitting layer adjacent to an aperture in the aperture layer and the aperture confines optical modes to be emitted from the light-emitting layer.

SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE AND METHOD FOR PRODUCING THE SAME

A surface-emitting semiconductor laser device includes a substrate and a semiconductor layer disposed on the substrate. The semiconductor layer includes a first semiconductor multilayer film of a first conductivity type, a first spacer layer, an active layer, a second spacer layer, and a second semiconductor multilayer film of a second conductivity type. The first semiconductor multilayer film and the second semiconductor multilayer film form a cavity. A peak of a pattern of a standing wave formed by the cavity and the center of the active layer are located at different positions. 1. A surface-emitting semiconductor laser device comprising:a substrate; and a first semiconductor multilayer film of a first conductivity type,', 'a first spacer layer,', 'an active layer,', 'a second spacer layer, and', 'a second semiconductor multilayer film of a second conductivity type,', 'the first semiconductor multilayer film and the second semiconductor multilayer film forming a cavity,, 'a semiconductor layer disposed on the substrate, the semiconductor layer including'}wherein a peak of a pattern of a standing wave formed by the cavity and a center of the active layer are located at different positions.2. The surface-emitting semiconductor laser device according to claim 1 ,wherein the peak of a pattern of a standing wave formed by the cavity and the center of the active layer are located at different positions because the first spacer layer and the second spacer layer have different optical thicknesses.3. The surface-emitting semiconductor laser device according to claim 2 ,wherein the first spacer layer and the second spacer layer have different optical thicknesses because of at least one of the following reasons:the first spacer layer and the second spacer layer have different physical thicknesses; andthe first spacer layer and the second spacer layer have different refractive indices.4. The surface-emitting semiconductor laser device according to claim 2 ,wherein a ratio ...

Laser With Perovskite Gain Layer

Within examples, a laser includes a first electrode and a second electrode; a first transport layer and a second transport layer that are between the first electrode and the second electrode; a gain layer positioned between the first transport layer and the second transport layer, where the gain layer comprises a material having a Perovskite crystal structure; and a substrate on which the first electrode, the second electrode, the first transport layer, the second transport layer, and the gain layer are formed, where a distributed feedback (DFB) waveguide is formed within the first transport layer, and where the laser is configured such that a current flowing through the gain layer between the first electrode and the second electrode causes the gain layer to emit coherent light. Examples also include methods for fabricating the laser, as well as additional lasers and methods for forming those lasers. 119-. (canceled)20. A method of fabricating a laser , the method comprising:forming a first distributed Bragg reflector (DBR) on a substrate;forming a first electrode on the first DBR;forming a first transport layer on the first electrode;forming, via spin coating deposition or evaporation deposition, a gain layer on the first transport layer, wherein the gain layer comprises a material having a Perovskite crystal structure;forming a second transport layer on the gain layer;forming a second electrode on the second transport layer such that the second electrode comprises an aperture; andforming a second DBR within the aperture of the second electrode.2125-. (canceled)26. The method of claim 20 , further comprising:forming an electrically insulating layer between the first transport layer and the first electrode, wherein the electrically insulating layer includes a second aperture,wherein a portion of the first electrode is positioned within the second aperture.2732-. (canceled)33. The method of claim 20 , wherein the material having the Perovskite crystal structure ...

LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure. 1. A light-emitting element comprising:a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order,wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure;a wall structure disposed so as to surround the mesa structure, the wall structure having the same layer structure as a portion of the mesa structure in which the insulation region is provided;at least one bridge structure connecting the mesa structure and the wall structure, the bridge structure having the same layer structure as the portion of the mesa structure in which the insulation region is provided;a first electrode electrically connected to the first compound semiconductor layer; anda second electrode disposed on a top face of the wall structure, the second electrode being electrically connected to the second ...

VERTICAL CAVITY SURFACE EMITTING LASER INCLUDING META STRUCTURE REFLECTOR AND OPTICAL DEVICE INCLUDING THE VERTICAL CAVITY SURFACE EMITTING LASER

A vertical cavity surface emitting laser includes a gain layer configured to generate light; a distributed Bragg reflector below the gains layer; and a meta structure reflector above the gain layer and comprising a plurality of nano structures having a sub wavelength dimension. 1. A vertical cavity surface emitting laser comprising:a gain layer comprising an upper clad layer, a lower clad layer, an active layer disposed between the upper clad layer and the lower clad layer and configured to generate light;a first electrode and a second electrode spaced apart from each other;a first distributed Bragg reflector disposed below the gain layer;a meta structure reflector disposed above the gain layer and comprising a plurality of nano structures having a sub wavelength dimension; anda heat sink configured to dissipate heat generated from the gain layer.2. The vertical cavity surface emitting laser of claim 1 , wherein the meta structure reflector is disposed on an upper portion of the gain layer claim 1 , andwherein the vertical cavity surface emitting laser further comprises a second distributed Bragg reflector disposed between the meta structure reflector and the gain layer.3. The vertical cavity surface emitting laser of claim 2 , wherein a number of stack layers of the second distributed Bragg reflector is smaller than a number of stack layers of the first distributed Bragg reflector.4. The vertical cavity surface emitting laser of claim 3 , wherein a reflectance of the meta structure reflector and the second distributed Bragg reflector and a reflectance of the first distributed Bragg reflector allow the light generated in the gain layer to be emitted through the meta structure reflector.5. The vertical cavity surface emitting laser of claim 1 ,wherein the meta structure reflector is disposed on an upper portion of the gain layer,wherein the heat sink is disposed on an upper portion of the meta structure reflector, andwherein the light generated in the gain layer is ...

VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAY WITH MULTIPLE METAL LAYERS FOR ADDRESSING DIFFERENT GROUPS OF EMITTERS

An optical device may include an array of vertical-cavity surface-emitting lasers (VCSELs) having a design wavelength, each VCSEL having an emission area. The optical device may include a first metal layer, substantially covering the array, a second metal layer substantially covering the first metal layer, and an electrical isolation layer, between the first metal layer and the second metal layer, that includes vias for electrically connecting portions of the first metal layer and portions of the second metal layer. The optical device may include a dielectric disposed over the emission area of each VCSEL. A variation in a thickness of the dielectric across at least approximately 90% of an area of the dielectric may be less than approximately 2% of the design wavelength. A depth of a well around the emission area may be equal to at least approximately 10% of a width of the emission area. 1. An optical device comprising:an array of vertical-cavity surface-emitting lasers (VCSELs) having a design wavelength, each VCSEL having an emission area;a first metal layer that substantially covers the array, the first metal layer including openings for each emission area;a second metal layer that substantially covers the first metal layer; 'the electrical isolation layer including vias for electrically connecting portions of the first metal layer and portions of the second metal layer; and', 'an electrical isolation layer between the first metal layer and the second metal layer,'} wherein a variation in the thickness of the dielectric across at least approximately 90% of the area of the dielectric is less than approximately 2% of the design wavelength, and', 'wherein a depth of a well formed by at least the first metal layer around the emission area of each VCSEL is equal to at least approximately 10% of a width of the emission area., 'the dielectric over each emission area having a thickness and an area,'}, 'a dielectric disposed over the emission area of each VCSEL,'}2. The ...

HIGH SPEED HIGH BANDWIDTH VERTICAL-CAVITY SURFACE-EMITTING LASER

Example vertical cavity surface emitting lasers (VCSELs) include a mesa structure disposed on a substrate, the mesa structure including a first reflector, a second reflector defining at least one diameter, and an active cavity material structure disposed between the first and second reflectors; and a second contact layer disposed at least in part on top of the mesa structure and defining a physical emission aperture having a physical emission aperture diameter. The ratio of the physical emission aperture diameter to the at least one diameter is greater than or approximately 0.172 and/or the ratio of the physical emission aperture diameter to the at least one diameter is less than or approximately 0.36. An example VCSEL includes a substrate; a buffer layer disposed on a portion of the substrate; and an emission structure disposed on the buffer layer. 1. A vertical-cavity surface-emitting laser (VCSEL) comprising: a first reflector,', 'a second reflector defining at least one diameter, and', 'an active cavity material structure disposed between the first and second reflectors, and, 'a mesa structure disposed on a substrate, the mesa structure comprisinga second contact layer disposed at least in part on top of the mesa structure and defining a physical emission aperture having a physical emission aperture diameter,wherein the ratio of the physical emission aperture diameter to the at least one diameter is greater than or approximately 0.172, andwherein the VCSEL defines an emission axis, and each of the at least one diameter and the physical emission aperture diameter is measured in a corresponding plane substantially perpendicular to the emission axis.2. The VCSEL of claim 1 , wherein the ratio of the physical emission aperture diameter to the at least one diameter is less than or approximately 0.36.3. The VCSEL of claim 1 , wherein the second reflector comprises one or more oxidized elements defining an oxidation profile and the at least one diameter is an oxidation ...

LASER DEVICE

The present invention provides a light source for light circuits on a silicon platform. A vertical laser cavity is formed by a gain region arranged between a first mirror structure and a second mirror structure, both acting as mirrors, by forming a grating region including an active material in a silicon layer in a semiconductor structure or wafer structure. A waveguide for receiving light from the region of the mirrors is formed within or to be connected to the region of the mirrors, and functions as an output coupler for the VCL. Thereby, vertical lasing modes are coupled to lateral in-plane modes of the in-plane waveguide formed in the silicon layer, and light can be provided to e.g. photonic circuits on a SOI or CMOS substrate in the silicon. 1. A laser comprising:a cavity defined by a first mirroring structure and a second mirroring structure formed in semiconductor layers on a substrate and being arranged to support light oscillation along an oscillation axis normal to a plane of the substrate, wherein:the first mirroring structure is in the form of a grating formed in a first semiconductor material layer;an active gain material is provided within the first mirroring structure; andelectric contacts for drawing an electric current through the active gain material to facilitate lasing, wherein the electric contacts for drawing an electric current through the active gain material are positioned in the first mirroring structure on opposite sides of the active gain material as seen in the plane of the layers.221-. (canceled)22. The laser according to claim 1 , wherein the first semiconductor material layer comprises a III-V semiconductor material.23. The laser according to claim 1 , wherein the first mirroring structure comprises a periodic active grating.24. The laser according to claim 1 , wherein the second mirroring structure comprises a periodic passive grating.25. The laser according to claim 1 , wherein either the first mirroring structure or the second ...

TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICES AND INTEGRATED PHOTONICS SYSTEM

Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser. 1patterning and etching a first semiconductor layer to form a first semiconductor fin extending above a substrate region;forming compressive stressors on side walls of the first semiconductor fin to impart uniaxial tensile strain in the first semiconductor fin in a direction orthogonal to a plane defined by said substrate region, said compressive stressors formed by depositing a conformal blanket layer of compressively stressed silicon nitride over the first semiconductor fin and then etching the deposited silicon nitride from a top region of the first semiconductor fin, thereby exposing a top surface of the first semiconductor fin.. A method, comprising: This is a CONTINUATION of U.S. application Ser. No. 15/800,450, filed Nov. 1, 2017, which is a CONTINUATION of U.S. application Ser. No. 15/000,975, filed Jan. 19, 2016, now U.S. patent Ser. No. 10/008,827, which is a CONTINUATION of U.S. application Ser. No. 14/698,759, filed Apr. 28, 2015, now U.S. Pat. No. 9,270,083, which is a CONTINUATION of U.S. application Ser. No. 14/256,758, filed Apr. 18, 2014, now U.S. Pat. No. 9,036,672, which is a CONTINUATION of U.S. application Ser. No. 13/209,186, filed Aug. 12, 2011, now U.S. Pat. No. 8,731,017, each of which are hereby incorporated herein by reference.The present invention relates generally to optical systems that include semiconductor light emitting devices or semiconductor light detectors. More specifically, the present ...

SURFACE EMITTING LASER, ATOMIC OSCILLATOR, AND MANUFACTURING METHOD OF SURFACE EMITTING LASER

A surface emitting laser includes: a substrate; and a laminated body disposed over the substrate, wherein the laminated body includes a first mirror layer disposed over the substrate, an active layer disposed over the first mirror layer, and a second mirror layer disposed over the active layer, and surface roughness Ra of an uppermost layer of the first mirror layer is greater than or equal to 0.45 nm and less than or equal to 1.0 nm. 1. A surface emitting laser comprising:a substrate; anda laminated body disposed over the substrate,wherein the laminated body includes a first mirror layer disposed over the substrate, an active layer disposed over the first mirror layer, and a second mirror layer disposed over the active layer, andsurface roughness Ra of an uppermost layer of the first mirror layer is greater than or equal to 0.45 nm and less than or equal to 1.0 nm.2. The surface emitting laser according to claim 1 ,wherein the first mirror layer includes a first layer formed of AlGaAs, and a second layer formed of AlGaAs of which an Al composition is lower than that of the first layer.3. The surface emitting laser according to claim 2 ,{'sup': 17', '−3', '18', '−3, 'wherein a concentration of carbon doped onto the first layer is greater than or equal to 7.5×10cmand less than or equal to 2.0×10cm.'}4. An atomic oscillator comprising the surface emitting laser according to .5. An atomic oscillator comprising the surface emitting laser according to .6. An atomic oscillator comprising the surface emitting laser according to .7. A manufacturing method of a surface emitting laser claim 3 , comprising:forming a first mirror layer over a substrate;forming an active layer over the first mirror layer;forming a second mirror layer over the active layer; andforming a laminated body by patterning the first mirror layer, the active layer, and the second mirror layer,wherein in the forming of the first mirror layer, surface roughness Ra of an uppermost layer of the first mirror ...

Silicon dbr structure-integrated light element, and preparation method

The present invention relates to a silicon DBR structure-integrated light device, and a preparation method thereof, and more specifically, to a silicon DBR structure-integrated light device or vertical cavity light emitting diode, and a preparation method thereof, enabling preparation by a small number of layers and capable of reducing process time and costs due to a large contrast in refractive index of a silicon DBR structure formed by depositing silicon in a slanted or vertical manner.

SURFACE EMITTING LASER, INFORMATION OBTAINING APPARATUS, AND IMAGING APPARATUS

The present invention provides a surface emitting laser the wavelength-tunable band of which is wide. The wavelength-tunable surface emitting laser includes a first reflector (), an active layer () disposed on the first reflector (), a beam portion () disposed over the active layer () with an air gap therebetween, and a second reflector () disposed on the beam portion (). The second reflector () has a distributed Bragg reflector consisting of a stack of dielectric layers. The beam portion () has a distributed Bragg reflector consisting of a stack of conductive semiconductor layers. 1. A wavelength-tunable surface emitting laser comprising:a first reflector;an active layer disposed on the first reflector;a beam portion disposed over the active layer with an air gap therebetween; anda second reflector disposed on the beam portion,wherein the second reflector has a distributed Bragg reflector consisting of a stack of dielectric layers, andwherein the beam portion has a distributed Bragg reflector consisting of a stack of conductive semiconductor layers.2. The surface emitting laser according to claim 1 , wherein the optical thickness of the beam portion is greater than or equal to the center wavelength of a wavelength band having a reflectance of 99.5% or more in the reflectance spectrum of the second reflector.3. The surface emitting laser according to claim 1 , wherein the distributed Bragg reflector of the second reflector has a configuration in which first layers and second layers having a refractive index lower than that of the first layers are alternately stacked.5. The surface emitting laser according to claim 1 , wherein the distributed Bragg reflector of the beam portion has a configuration in which third layers and fourth layers having a refractive index lower than that of the third layers are alternately stacked.6. The surface emitting laser according to claim 5 , wherein the semiconductor layer closest to the active layer in the distributed Bragg reflector ...

METHODS FOR PRODUCING NEW SILICON LIGHT SOURCE AND DEVICES

The present invention relates to production method and device applications of a new silicon (Si) semiconductor light source that emits at a single wavelength at 1320 nm with a full width at half maximum (FWHM) of less than 200 nm and a photoluminescence quantum efficiency of greater than 50% at room temperature. The semiconductor that is the base for the new light source includes a surface which is treated by an acid vapor involving heavy water or Deuterium Oxide (D2O) and a surface layer producing the light source at 1320 nm. 1. A silicon light source for photoluminescence , electroluminescence , laser , transistor , diode and sensor applications , having a single peak emission at 1320 nm with a full width at half maximum of less than 200 nm , in the infrared region between 800-1800 nm and a luminescence quantum efficiency of greater than 50%.2. A method for production of the light source according to claim 1 , comprising:{'b': '4', 'The treatment of a silicon wafer () surface by acid vapor of heavy water D2O containing HF:HNO3 chemical mixture;'}{'b': 3', '4, 'The formation of a nanoporous silicon layer () on the said wafer () by the said treatment;'}{'b': 6', '3, 'The formation of a deuterated ammonium silicon hexafluoride (ND4)2SiF6 layer () on the nanoporous silicon layer ().'}3. The heavy water (deuterium oxide claim 2 , D2O) containing chemical mixture according to is preferably the chemical solution of HF:HNO3:D2O mixture;4. A silicon light source according claim 1 , comprising:{'b': '4', 'a) a single silicon wafer ();'}{'b': 3', '4, 'claim-ref': {'@idref': 'CLM-00002', 'claim 2'}, 'b) a nanoporous silicon layer () formed on the said wafer () using the heavy water (D2O) containing acid vapor according to ;'}{'b': '1', 'c) a semi-transparent metal contact ()'}{'b': '5', 'd) a backside metal contact () to the said wafer.'}5. A silicon light source according to claim 4 , further comprising the following optional components:{'b': 6', '3, 'claim-ref': {'@idref': ...

Method and applications of thin-film membrane transfer

The disclosure relates to method and apparatus for micro-contact printing of micro-electromechanical systems (“MEMS”) in a solvent-free environment. The disclosed embodiments enable forming a composite membrane over a parylene layer and transferring the composite structure to a receiving structure to form one or more microcavities covered by the composite membrane. The parylene film may have a thickness in the range of about 100 nm-2 microns; 100 nm-1 micron, 200-300 nm, 300-500 nm, 500 nm to 1 micron and 1-30 microns. Next, one or more secondary layers are formed over the parylene to create a composite membrane. The composite membrane may have a thickness of about 100 nm to 700 nm to several microns. The composite membrane's deflection in response to external forces can be measured to provide a contact-less detector. Conversely, the composite membrane may be actuated using an external bias to cause deflection commensurate with the applied bias. Applications of the disclosed embodiments include tunable lasers, microphones, microspeakers, remotely-activated contact-less pressure sensors and the like.

SURFACE EMITTING LASER ELEMENT

A surface emitting laser element includes: a semiconductor structure layer interposed between a first multi-layer reflector and a second multi-layer reflector; an insulating current confinement layer that is formed on a semiconductor layer of a second conductivity type and includes a first through-hole with a transparent electrode; the second multi-layer reflector formed on the current confinement layer and the transparent electrode; a heat conducting layer that is formed on the second multi-layer reflector and includes a second through-hole disposed coaxially with the first through-hole in the current confinement layer and having a minimum opening diameter smaller than an opening diameter of the first through-hole; and an emission color converting portion that is formed above the second through-hole in the heat conducting layer and includes phosphor. 1. A surface emitting laser element comprising:a first multi-layer reflector formed on a substrate;a semiconductor structure layer formed on the first multi-layer reflector, the semiconductor structure layer including a semiconductor layer of a first conductivity type, an active layer including a quantum well layer, and a semiconductor layer of a second conductivity type opposite to the first conductivity type;an insulating current confinement layer formed on the semiconductor layer of the second conductivity type, the current confinement layer including a first through-hole;a transparent electrode covering the first through-hole and being in contact with the semiconductor layer of the second conductivity type;a second multi-layer reflector formed on the transparent electrode;a heat conducting layer formed on the second multi-layer reflector, the heat conducting layer including a second through-hole disposed coaxially with the first through-hole of the current confinement layer and having a minimum opening diameter smaller than an opening diameter of the first through-hole; andan emission color converting portion ...

Interband Cascade Light Emitting Devices

An interband cascade (IC) light emitting device comprising a plurality of interband cascade stages, wherein at least one of the IC stages is constructed to have an electron injector made of one or more QWs, a type-I quantum well (QW) active region, a barrier layer positioned between the active region and the electron injector, a hole injector made of one or more QWs, and a barrier layer positioned between the active region and the hole injector. In at least one embodiment, a type II heterointerface layer is between the electron injector and an adjacent hole injector. The well layer of the type-I QW active region has compressive strain, while the barrier layers which flank the type-I QW active region comprise tensile strain layers. In certain embodiments, the electron injector and the hole injector comprise tensile strained layers.

LIGHT EMITTER DEVICE BASED ON A PHOTONIC CRYSTAL WITH PILLAR- OR WALL-SHAPED SEMICONDUCTOR ELEMENTS, AND METHODS FOR THE OPERATION AND PRODUCTION THEREOF

A light emitter device () comprises a substrate () and a photonic crystal (), which is arranged on the substrate () and comprises pillar- and/or wall-shaped semiconductor elements (), which are arranged periodically standing out from the substrate (), wherein the photonic crystal () forms a resonator, in which the semiconductor elements () are arranged in a first resonator section () with a first period (d), in a second resonator section () with a second period (d) and in a third resonator section () with a third period (d), wherein on the substrate () the second resonator section () and the third resonator section () are arranged on two mutually opposing sides of the first resonator section () and the second period (d) and the third period (d) differ from the first period (d), the first resonator section () forms a light-emitting medium and the third resonator section () forms a coupling-out region, through which a part of the light field in the first resonator section () can be coupled out of the resonator in a light outcoupling direction parallel to a substrate surface () of the substrate (). Methods for operating and producing the light emitter device () are also described. 1. A light emitter device , comprising:a substrate, anda photonic crystal, which is arranged on the substrate and comprises a plurality of at least one of pillar-shaped and wall-shaped semiconductor elements, which are arranged in a periodic manner protruding from the substrate, wherein{'sub': 1', '2', '3', '2', '3', '1, 'the photonic crystal forms a resonator, in which the semiconductor elements are arranged in a first resonator segment at a first period (d), in a second resonator segment at a second period (d), and in a third resonator segment at a third period (d), wherein on the substrate, the second resonator segment and the third resonator segment are arranged on two opposite sides of the first resonator segment, and the second period (d) and the third period (d) differ from the first ...

VERTICAL CAVITY SURFACE EMITTING LASER INCLUDING META STRUCTURE REFLECTOR AND OPTICAL DEVICE INCLUDING THE VERTICAL CAVITY SURFACE EMITTING LASER

A vertical cavity surface emitting laser includes a gain layer configured to generate light; a distributed Bragg reflector below the gains layer; and a meta structure reflector above the gain layer and comprising a plurality of nano structures having a sub wavelength dimension. 1. An optical device comprising: a gain layer comprising an upper clad layer, a lower clad layer, and an active layer disposed between the upper clad layer and the lower clad layer and configured to generate light;', 'a first electrode and a second electrode spaced apart from each other;', 'a first distributed Bragg reflector disposed below the gain layer;', 'a second reflector including a meta structure reflector disposed above the gain layer and comprising a plurality of nano structures having a sub wavelength dimension; and', 'a heat sink disposed on an upper portion of the meta structure reflector, and configured to dissipate heat generated from the gain layer,', 'wherein a reflectance of the second reflector is greater than a reflectance of the first distributed Bragg reflector to allow the light generated in the gain layer to be emitted out of the laser, through the first distributed Bragg reflector disposed below the gain layer, the meta structure reflector, and the heat sink;, 'a laser configured to emit the light toward an object, the laser comprisinga sensor configured to receive the light reflected from the object; andan analyzer configured to analyze the light received by the sensor to obtain information of the object.2. The optical device of claim 1 , further comprises an optical element between the laser and the object for adjusting a direction of the light emitted from the laser toward the object.3. The optical device of claim 1 , further comprises an optical element between the laser and the object for adjusting a beam size of the light emitted from the laser.4. The optical device of claim 1 , further comprises an optical element between the laser and the object for modulating ...

Vertical-cavity surface-emitting lasers

Vertical-cavity surface-emitting lasers (“VCSELs”) and VCSEL arrays are disclosed. In one aspect, a surface-emitting laser includes a grating layer having a sub-wavelength grating to form a resonant cavity with a reflective layer for a wavelength of light to be emitted from a light-emitting layer and an aperture layer disposed within the resonant cavity. The VCSEL includes a charge carrier transport layer disposed between the grating layer and the light-emitting layer. The transport layer has a gap adjacent to the sub-wavelength grating and a spacer region between the gap and the light-emitting layer. The spacer region and gap are dimensioned to be substantially transparent to the wavelength. The aperture layer directs charge carriers to enter a region of the light-emitting layer adjacent to an aperture in the aperture layer and the aperture confines optical modes to be emitted from the light-emitting layer.

Mode Control in Vertical-Cavity Surface-Emitting Lasers

Aspects of the subject disclosure may include, for example, a first distributed Bragg reflector, a second distributed Bragg reflector, an active region with an oxide aperture between the first and second distributed Bragg reflectors, and a dielectric layer, where a positioning of the dielectric layer with respect to the first and second distributed Bragg reflectors and the oxide aperture causes suppression of higher modes of the vertical-cavity surface-emitting laser device. Other embodiments are disclosed. 1. A vertical-cavity surface-emitting laser device , comprising:a first distributed Bragg reflector;a second distributed Bragg reflector;an active region with an oxide aperture between the first and second distributed Bragg reflectors; anda dielectric layer, wherein a positioning of the dielectric layer with respect to the first and second distributed Bragg reflectors and the oxide aperture causes suppression of higher modes of the vertical-cavity surface-emitting laser device.2. The vertical-cavity surface-emitting laser device of claim 1 , wherein the dielectric layer has an opening therethrough.3. The vertical-cavity surface-emitting laser device of claim 2 , wherein the opening of the dielectric layer is at a center of the dielectric layer.4. The vertical-cavity surface-emitting laser device of claim 2 , wherein the dielectric layer comprises amorphous silicon.5. The vertical-cavity surface-emitting laser device of claim 1 , wherein a p-contact layer is disposed between the dielectric layer and the second distributed Bragg reflector.6. The vertical-cavity surface-emitting laser device of claim 1 , wherein a distal portion of the second distributed Bragg reflector includes a zinc diffusion region claim 1 , the distal portion being on an end of the second distributed Bragg reflector that is opposite to the active region.7. The vertical-cavity surface-emitting laser device of claim 1 , wherein the dielectric layer is concentrically aligned with the oxide ...

SEMICONDUCTOR LASER WITH INTEGRATED PHOTOTRANSISTOR

The present invention relates to a semiconductor laser for use in an optical module for measuring distances and/or movements, using the self-mixing effect. The semiconductor laser comprises a layer structure including an active region () embedded between two layer sequences () and further comprises a photodetector arranged to measure an intensity of an optical field resonating in said laser. The photodetector is a phototransistor composed of an emitter layer (e), a collector layer (c) and a base layer (b), each of which being a bulk layer and forming part of one of said layer sequences (). With the proposed semiconductor laser an optical module based on this laser can be manufactured more easily, at lower costs and in a smaller size than known modules. 1. A vertical cavity surface emitter laser (VCSEL) comprising:a first distributed Bragg reflector (DBR),a second DBR, andan active region situated between the first and second DBRs,wherein each of the first and second DBRs includes multiple DBR layers,wherein each DBR layer is a bulk layer that does not include a quantum well and has a refractive index that differs from an adjacent DBR layer,wherein an interior DBR layer of the first DBR includes an n-doped layer and a p-doped layer, such that the at least one DBR layer and a corresponding adjacent DBR layer form a phototransistor within the first DBR.2. The VCSEL of claim 1 , wherein the adjacent DBR layer is n-doped claim 1 , thereby forming an NPN structure that forms the phototransistor within the first DBR.3. The VCSEL of claim 1 , wherein an end DBR layer of the first DBR claim 1 , opposite the active region claim 1 , forms an emitter of the phototransistor.4. The VCSEL of claim 1 , wherein one of the n-doped layer and the p-doped layer forms a base of the phototransistor claim 1 , and an opposite-doped one of the p-doped layer and the n-doped layer forms an emitter of the phototransistor.5. The VCSEL of claim 4 , wherein a bandgap of the base is substantially ...

VCSEL WITH INTRACAVITY CONTACTS

The present invention relates to a laser device being formed of at least one VCSEL () with intracavity contacts. The VCSEL comprises a layer structure () with an active region () between a first DBR () and a second DBR (), a first current-injection layer () of a first conductivity type between the first DBR () and the active region (), and a second current-injection layer () of a second conductivity type between the second DBR () and the active region (). The first and second current-injection layers () are in contact with a first and a second metallic contact (), respectively. The first and/or second DBR () are formed of alternating Aluminum oxide and Al(x)Ga(1−x)As containing layers. The proposed design of this VCSEL allows an increased efficiency and lower production costs of such a laser since the top and bottom DBRs may be formed of a considerable reduced thickness. 1. A laser device being formed of at least one vertical cavity surface emitting laser with intracavity contacts , the vertical cavity surface emitting laser comprising:an epitaxial layer structure with an active region between a first distributed Bragg reflector and a second distributed Bragg reflector,a first current-injection layer of a first conductivity type between the first distributed Bagg Bragg reflector and the active region,a second current-injection layer of a second conductivity type between the second distributed Bragg reflector and the active region,a current aperture, the first and second current-injection layers being in contact with a first and a second metallic contact, respectively,{'b': 4', '10, 'wherein said first and/or second distributed Bragg reflectors (, ) are formed of alternating Aluminum oxide layers and Al(x)Ga(1−x)As layers with 0≦x 0.3,'}wherein the first and second metallic contacts are arranged on opposing sides of each of said vertical cavity surface emitting lasers, wherein there is at least one non-etched bar of the epitaxial layer structure to pass charge ...

LATERAL ELECTROCHEMICAL ETCHING OF III-NITRIDE MATERIALS FOR MICROFABRICATION

Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs. 1. A III-nitride DBR device comprising:a multi-layer structure having first and second layers formed of III-nitride material, wherein a conductivity of the first layers is different from a conductivity of the second layers;a MQW structure formed adjacent the multi-layer structure, wherein the MQW structure comprises an active region of the device;vias formed into the multi-layer structure proximal to the MQW structure; andregions adjacent the vias in which portions of the second layers have been completely removed to form at least two first layers separated by one or more layers of air.2. The DBR device of claim 1 , wherein the MQW structure forms an active region of a laser.3. The DBR device of claim 1 , wherein the first layers and second layers comprise GaN.4. The DBR device of claim 3 , wherein the second layers comprise high n-type conductivity material.5. The DBR device of claim 1 , wherein the thicknesses of the first layers are substantially the same.6. The DBR device of claim 1 , wherein the thicknesses of the first layers correspond to approximately one-quarter of a selected emission wavelength for the laser.7. The DBR device of claim 1 , wherein the removed portions of the second layers and remaining first layers form a structure having periodic contrast of optical refractive index. This application claims the benefit of U.S. provisional application Ser ...

VCSEL Narrow Divergence Proximity Sensor

A proximity sensor which uses very narrow divergent beams from Vertical Cavity Surface Emitting Laser (VCSEL) for the illumination source is disclosed. Narrow divergent beams in the range 0.5 to 10 degrees can be achieved to provide high proximity sensing accuracy in a small footprint assembly. One approach to reducing the beam divergence is to increase the length of the VCSEL resonant cavity using external third mirror. A second embodiment extends the length of the VCSEL cavity by modifying the DBR mirrors and the gain region. Optical microlenses can be coupled with the VCSEL to collimate the output beam and reduce the beam divergence. These can be separate optical elements or integrated with the VCEL by modifying the substrate output surface profile or an added a transparent layer. These methods of beam divergence reduction are incorporated into various embodiment configurations to produce a miniature proximity sensor suitable for cell phones and tablets. 1. An optical sensor module comprising:an optical source including a VCSEL device operable to generate a narrow divergence source beam directed through a window toward an object, the narrow divergence source beam having a full-width half-maximum beam divergence of no more than 10 degrees;an optical detector to sense light reflected back from the object illuminated by the narrow divergence source beam; anda computation device operable to determine a distance to the object or a physical characteristic of the object based at least in part on a signal from the optical detector.2. The optical sensor module of wherein the optical detector is disposed such that light specularly reflected from the window is not incident on the optical detector.3. The optical sensor module of further including a baffle disposed between the VCSEL devices and the optical detector.4. The optical sensor module of wherein the VCSEL device includes a gain section having multiple gain sections separated from each other by respective tunnel ...

LOW IMPEDANCE VCSELS

In example implementations of a vertical-cavity surface-emitting laser (VCSEL), the VCSEL includes a p-type distributed Bragg reflector (p-DBR) layer and a p-type ohmic (p-ohmic) contact layer adjacent to the p-DBR layer. The p-DBR layer may include an oxide aperture and the p-ohmic contact layer may have an opening that is aligned with the oxide aperture. The opening may be filled with a dielectric material. A metal layer may be coupled to the p-ohmic contact layer and encapsulate the dielectric material. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. A method , comprising:creating on a substrate a p-type distributed Bragg reflector (p-DBR) layer having a p-type ohmic (p-ohmic) contact layer, wherein the p-DBR layer comprises an alternating stack of high refractive index layers and low refractive index layers, wherein the p-ohmic contact layer has an opening;applying a wet oxidation to the p-DBR layer to oxidize at least one low refractive index layer to form an oxide aperture, wherein the oxide aperture is aligned with the opening;filling the opening in the p-ohmic contact layer with a dielectric material; andencapsulating the dielectric material with a metal layer coupled to the p-ohmic contact layer.10. The method of claim 9 , wherein the alternating stack of the p-DBR layer comprises less than 30 layers.11. The method of claim 9 , further comprising:applying a polyimide or a benzo-cyclo-butane to the p-DBR layer;creating vias to the p-ohmic contact layer and an n-type ohmic (n-ohmic) contact layer; andadding a pad and interconnect metal over the polyimide or the benzo-cyclo-butane and coupled to the p-ohmic contact layer and the n-ohmic contact layer.12. The method of claim 9 , further comprising:creating on the substrate a n-type distributed Bragg reflector (n-DBR) layer; andcreating on the substrate a laser cavity layer adjacent to the n-DBR layer and the p-DBR layer,13. A method claim 9 , comprising ...