Настройки

Укажите год
-

Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

Подробнее
-

Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

Подробнее

Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Укажите год
Укажите год
Применить Всего найдено 1315. Отображено 100.
07-03-2013 дата публикации

Metal Oxide Semiconductor Films, Structures, and Methods

Номер: US20130056691A1
Автор: Henry W. White, Tae-Seok Lee, Yungryel Ryu
Принадлежит: Moxtronics Inc

Materials and structures for improving the performance of semiconductor devices include ZnBeO alloy materials, ZnCdOSe alloy materials, ZnBeO alloy materials that may contain Mg for lattice matching purposes, and BeO material. The atomic fraction x of Be in the ZnBeO alloy system, namely, Zn 1-x Be x O, can be varied to increase the energy band gap of ZnO to values larger than that of ZnO. The atomic fraction y of Cd and the atomic fraction z of Se in the ZnCdOSe alloy system, namely, Zn 1-y Cd y O 1-z Se z , can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped, or p-type or n-type doped, by use of selected dopant elements.

Подробнее
Номер записи: 1
09-05-2013 дата публикации

NITRIDE-COMPOSITE SEMICONDUCTOR LASER ELEMENT, ITS MANUFACTURING METHOD, AND SEMICONDUCTOR OPTICAL DEVICE

Номер: US20130114633A1
Автор: ITO Shigetoshi, MOTOKI Kensaku, TANEYA Mototaka, TANI Zenpei, UETA Yoshihiro, YUASA Takayuki
Принадлежит:

A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more. 2. The nitride semiconductor laser device according to claim 1 , wherein the distance d is 60 μm or more.3. The nitride semiconductor laser device according to claim 1 , wherein the nitride semiconductor substrate is doped with a dopant.4. The nitride semiconductor laser device according to claim 1 , wherein a high-luminescence region which is more luminous than a surrounding region is formed near a middle between adjacent dots.5. The nitride semiconductor laser device according to claim 4 , wherein the laser light waveguide region is located elsewhere than in the high-luminescence region.6. The nitride semiconductor laser device according to claim 1 , wherein a surface of the nitride semiconductor substrate on which the nitride semiconductor layer is grown is a (0001) plane.7. The nitride semiconductor laser device according to claim 1 , wherein a surface of the nitride semiconductor substrate on which the nitride semiconductor layer is grown has an off-angle in a range of 0.2° to 1° relative to a (0001) plane.8. The nitride semiconductor laser device according to claim 1 , wherein claim 1 , of a surface of the nitride semiconductor ...

Подробнее
Номер записи: 2
16-05-2013 дата публикации

SEMICONDUCTOR SURFACE LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THEREOF

Номер: US20130121358A1
Автор: Furuta Shinichi, Hirose Kazuyoshi, Kurosaka Yoshitaka, Noda Susumu, Shibata Kousuke, Sugiyama Takahiro, Watanabe Akiyoshi
Принадлежит:

A semiconductor surface light-emitting element of this invention is provided with a photonic crystal layer obtained by periodically forming a plurality of holes H in a basic layer A comprised of a first compound semiconductor of the zinc blende structure and growing embedded regions B comprised of a second compound semiconductor of the zinc blende structure, in the holes H, and an active layer to supply light to the photonic crystal layer , in which a principal surface of the basic layer A is a (001) plane and in which side faces of each hole H have at least three different {100} facets. 1. A semiconductor surface light-emitting element comprising: a basic layer including a plurality of holes periodically arranged in the basic layer, the basic layer being comprised of a first compound semiconductor of zinc blende structure, and', 'an embedded regions comprised of a second compound semiconductor of zinc blende structure, the embedded regions being grown in the holes; and, 'a photonic crystal layer comprisingan active layer for supplying light to the photonic crystal layer,wherein a principal surface of the basic layer is a (001) plane, andwherein side faces of the holes include at least three different {100} facets, or facets resulting from rotation of said {100} facets at a rotation angle of less than ±35° around a normal line to the principal surface.2. The semiconductor surface light-emitting element according to claim 1 , wherein the side faces of the holes include four different {100} facets claim 1 , or facets resulting from rotation of said {100} facets at a rotation angle of less than ±35° around the normal line to the principal surface.3. The semiconductor surface light-emitting element according to claim 1 , wherein the rotation angle is set to not more than ±25°.4. The semiconductor surface light-emitting element according to claim 1 , wherein the rotation angle is set to not more than 120°.5. The semiconductor surface light-emitting element according to ...

Подробнее
Номер записи: 3
06-06-2013 дата публикации

NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: US20130142210A1
Автор: ENYA Yohei, FUTAGAWA NORIYUKI, Kyono Takashi, Nakajima Hiroshi, TASAI Kunihiko, UENO Masaki, YANASHIMA Katsunori
Принадлежит:

A nitride semiconductor light-emitting device has a semiconductor ridge, and includes a first inner-layer between an active layer and an n-type cladding and a second inner-semiconductor layer between the active layer and a p-type cladding. The first inner-layer, active layer and second inner-layer constitute a core-region. The n-type cladding, core-region and p-type cladding constitute a waveguide-structure. The active layer and the first inner-layer constitute a first heterojunction inclined at an angle greater than zero with respect to a reference plane of the c-plane of the nitride semiconductor of the n-type cladding. Piezoelectric polarization of the well layer is oriented in a direction from the p-type cladding toward the n-type cladding. The second inner-layer and InGaN well layer constitute a second heterojunction. A distance between the ridge bottom and the second heterojunction is 200 nm or less. The ridge includes a third heterojunction between the second inner-layer and the p-type cladding. 1. A nitride semiconductor light emitting device comprising:a first group III nitride semiconductor region including an n-type cladding layer and a first inner semiconductor layer;an active layer provided on the first inner semiconductor layer in the first group III nitride semiconductor region;a second group III nitride semiconductor region including a p-type cladding layer and a second inner semiconductor layer, the second group III nitride semiconductor region being provided on the active layer; andan electrode provided on the second group III nitride semiconductor region,the first group III nitride semiconductor region, the active layer, and the second group III nitride semiconductor region being arranged in order along a given stacking axis;the first inner semiconductor layer being provided between the active layer and the n-type cladding layer;the second inner semiconductor layer being provided between the active layer and the p-type cladding layer;the first ...

Подробнее
Номер записи: 4
13-06-2013 дата публикации

METHOD OF MANUFACTURING SEMICONDUCTOR LASER DEVICE AND SEMICONDUCTOR LASER DEVICE

Номер: US20130148681A1
Автор: HAMAGUCHI TATSUSHI, TAKAGI Shimpei
Принадлежит:

There is provided a method of manufacturing a semiconductor laser device. The method includes: preparing a production substrate on a hexagonal-system group III nitride semiconductor substrate having a semi-polar plane, the production substrate having an epitaxial layer that includes a luminous layer of a semiconductor laser device; forming a cutting guide groove in a partial region on a surface of the production substrate, the partial region being on a scribe line on a resonator-end-face side of the semiconductor laser device and including one or more corners of the semiconductor laser device, and the cutting guide groove being formed in an extending direction along the scribe line and being V-shaped in cross section when viewed from the extending direction; and cutting, along the scribe line, the production substrate in which the cutting guide groove is formed. 1. A method of manufacturing a semiconductor laser device , the method comprising:preparing a production substrate on a hexagonal-system group III nitride semiconductor substrate having a semi-polar plane, the production substrate having an epitaxial layer that includes a luminous layer of a semiconductor laser device;forming a cutting guide groove in a partial region on a surface of the production substrate, the partial region being on a scribe line on a resonator-end-face side of the semiconductor laser device and including one or more corners of the semiconductor laser device, and the cutting guide groove being formed in an extending direction along the scribe line and being V-shaped in cross section when viewed from the extending direction; andcutting, along the scribe line, the production substrate in which the cutting guide groove is formed.2. The method according to claim 1 , wherein the hexagonal-system group III nitride semiconductor substrate is a semiconductor substrate having a semi-polar plane in which a direction realized by inclining a c-axis towards an m-axis at an angle in a range of about ...

Подробнее
Номер записи: 5
11-07-2013 дата публикации

SEMICONDUCTOR INTEGRATED DEVICE AND METHOD FOR PRODUCING THE SAME

Номер: US20130177037A1
Автор: YAGI Hideki
Принадлежит: Sumitomo Electric Industries, Ltd.

A semiconductor integrated device includes a light-emitting portion including a first lower mesa, a first lower buried layer provided on a side surface of the first lower mesa, a first upper mesa provided above the first lower mesa, and a first upper buried layer provided on a side surface of the first upper mesa; and an optical modulator portion including a second lower mesa, a second lower buried layer provided on a side surface of the second lower mesa, a second upper mesa provided above the second lower mesa, and a second upper buried layer provided on a side surface of the second upper mesa. The first and second lower mesas include first and second core layers optically coupled to each other. The first and second lower buried layers are composed of a semi-insulating semiconductor. The first and second upper buried layers are composed of a resin material. 1. A semiconductor integrated device comprising:a substrate including a first portion, a second portion, and a third portion arranged in a predetermined direction, the third portion being arranged between the first portion and the second portion;a light-emitting portion including a first lower mesa provided above the first portion, a first lower buried layer provided on a side surface of the first lower mesa and above the first portion, a first upper mesa provided above the first lower mesa, and a first upper buried layer provided on a side surface of the first upper mesa and above the first lower buried layer, the first lower mesa including a first core layer; andan optical modulator portion including a second lower mesa provided above the second portion, a second lower buried layer provided on a side surface of the second lower mesa and above the second portion, a second upper mesa provided above the second lower mesa, and a second upper buried layer provided on a side surface of the second upper mesa and above the second lower buried layer, the second lower mesa including a second core layer,wherein the ...

Подробнее
Номер записи: 6
18-07-2013 дата публикации

LASER DIODE AND METHOD OF MANUFACTURING LASER DIODE

Номер: US20130182734A1
Автор: HAMAGUCHI TATSUSHI, TAKAGI Shimpei
Принадлежит:

A laser diode includes: a semiconductor base made of a hexagonal Group III nitride semiconductor and having a semi-polar plane oriented along a {2, 0, −2, 1} direction; an epitaxial layer including a light-emitting layer forming an optical waveguide of laser light, and formed on the semi-polar plane of the semiconductor base, the epitaxial layer allowing a propagation direction of the laser light to be tilted, in an optical waveguide plane, at an angle ranging from about 8° to about 12° or about 18° to about 29° both inclusive with respect to a direction of projection of a c axis onto the optical waveguide plane, the optical waveguide plane including the propagation direction of the laser light and being parallel to the semi-polar plane; two resonator facets; a first electrode; and a second electrode. 1. A laser diode comprising:a semiconductor base made of a hexagonal Group III nitride semiconductor and having a semi-polar plane oriented along a {2, 0, −2, 1} direction;an epitaxial layer including a light-emitting layer forming an optical waveguide of laser light, and formed on the semi-polar plane of the semiconductor base, the epitaxial layer allowing a propagation direction of the laser light to be tilted, in an optical waveguide plane, at an angle ranging from about 8° to about 12° or about 18° to about 29° both inclusive with respect to a direction of projection of a c axis onto the optical waveguide plane, the optical waveguide plane including the propagation direction of the laser light and being parallel to the semi-polar plane;two resonator facets disposed at both ends of the optical waveguide of the laser light;a first electrode formed on the epitaxial layer; anda second electrode formed on a plane opposite to the semi-polar plane where the epitaxial layer is formed of the semiconductor base.2. The laser diode according to claim 1 , wherein the propagation direction of the laser light is tilted at an angle ranging from about 22° to about 27° both ...

Подробнее
Номер записи: 7
18-07-2013 дата публикации

SEMICONDUCTOR LASER

Номер: US20130182735A1
Автор: FUKAI Haruki, HAGIMOTO Masato, KAWANAKA Satoshi, KIYOSUMI Tsutomu, SASAKI Shinji
Принадлежит: OCLARO JAPAN, INC.

An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlGa)P, a composition of the n-type cladding layer is expressed as (AlGa)InP (0.9 Подробнее

Номер записи: 8
15-08-2013 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20130208747A1
Автор: ENYA Yohei, FUTAGAWA NORIYUKI, Kumano Tetsuya, Kyono Takashi, Nakajima Hiroshi, TASAI Kunihiko, YANASHIMA Katsunori
Принадлежит:

A semiconductor device includes: a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of InAlGaN, where x1>0 and y1>0, the second cladding layer being made of InAlGaN, where0≦x2≦about 0.02 and about 0.03≦y2≦about 0.07. 1. A semiconductor device comprising:a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and{'sub': x1', 'y1', '1-x1-y1', 'x2', 'y2', '1-x2-y2, 'b': 1', '1', '2', '2, 'an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of InAlGaN, where x>0 and y>0, the second cladding layer being made of InAlGaN, where 0≦x≦about 0.02 and about 0.03y≦about 0.07.'}2. The semiconductor device according to claim 1 , wherein composition of the second cladding layer is within a range allowing a lattice mismatch da/a with respect to the semiconductor substrate to satisfy |da/a|≦about 0.00145 claim 1 , where da=a′−a claim 1 , a lattice constant of the semiconductor substrate is “a” claim 1 , and a lattice constant of the epitaxial layer is “a”.3. The semiconductor device according to claim 2 , wherein the composition of the second cladding layer is determined to allow a band gap of the second cladding layer to be about 3.45 eV or over.4. The semiconductor device according to claim 3 , wherein the second cladding layer has a thickness of about 200 nm or over ...

Подробнее
Номер записи: 9
22-08-2013 дата публикации

(Al,Ga,In)N DIODE LASER FABRICATED AT REDUCED TEMPERATURE

Номер: US20130215921A1
Автор: Cohen Daniel A., DenBaars Steven P., Nakamura Shuji
Принадлежит: The Regents of the University of California

A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature. 1. A method of fabricating an (Al ,Ga ,In)N laser diode , comprisingfabricating an indium containing laser core; andfabricating subsequent layers on the laser core, in a manner that inhibits degradation of the laser core, wherein the subsequent layers fabricated on the laser core comprise a crystalline, polycrystalline or amorphous transparent conducting oxide grown or deposited on the laser core.2. The method of claim 1 , wherein the subsequent layers comprise one or more of: at least one waveguide core layer claim 1 , at least one waveguide cladding layer claim 1 , at least one carrier injection layer claim 1 , at least one carrier blocking layer claim 1 , and at least one electrical contact layer.3. The method of claim 1 , wherein the indium containing laser core is fabricated at a first temperature claim 1 , and the subsequent layers are grown or deposited on the laser core at or below a second temperature that is lower than the first temperature claim 1 , to inhibit degradation of the laser core.4. The method of claim 3 , wherein the crystalline transparent conductive oxide layer is grown from an aqueous solution claim 3 ,5. The method of claim 4 , wherein the crystalline transparent conducting oxide is combined with an amorphous or polycrystalline transparent conducting oxide layer deposited by physical vapor deposition.6. The method of claim 1 , wherein the subsequent layers fabricated on the laser core comprise at least one transparent and electrically conducting layer formed on or above an indium-containing ...

Подробнее
Номер записи: 10
05-09-2013 дата публикации

Human placental collagen compositions, and methods of making and using the same

Номер: US20130231288A1
Автор: Chris Lugo, James W. Edinger, Mohit Bhatia, Qian Ye
Принадлежит: Anthrogenesis Corp

The present invention provides compositions comprising human placental telopeptide collagen, methods of preparing the compositions, methods of their use and kits comprising the compositions. The compositions, kits and methods are useful, for example, for augmenting or replacing tissue of a mammal.

Подробнее
Номер записи: 11
26-09-2013 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Номер: US20130250992A1
Автор: ARIMOCHI MASAYUKI, Hino Tomonori, Ohmae Akira, Shiomi Michinori, Suzuki Nobuhiro, TOKUDA Kota, YANASHIMA Katsunori
Принадлежит: Sony Corppration

A semiconductor device comprising a substrate made of a material with a hexagonal crystal structure and having a substrate axis which is perpendicular to a principal surface of the substrate; and a nitride-based group III-V compound semiconductor layer grown directly on and in contact with the principal surface of the substrate without growing a buffer layer between the substrate and the nitride-based group III-V compound semiconductor layer, wherein, a direction of a growth axis of the semiconductor layer is substantially the same as a direction of the substrate axis of the substrate. 1. A semiconductor device comprising:a substrate made of a material with a hexagonal crystal structure and having a substrate axis which is perpendicular to a principal surface of the substrate; anda nitride-based group III-V compound semiconductor layer grown directly on and in contact with the principal surface of the substrate without growing a buffer layer between the substrate and the nitride-based group III-V compound semiconductor layer, 'a direction of a growth axis of the semiconductor layer is substantially the same as a direction of the substrate axis of the substrate.', 'wherein,'}2. The semiconductor device according to claim 1 , wherein the substrate is made of sapphire claim 1 , SiC claim 1 , α-ZnS claim 1 , ZnO claim 1 , or a nitride-based III-V compound semiconductor.3. The semiconductor device according to claim 1 , wherein the semiconductor device is a light emitting diode claim 1 , or a semiconductor laser.4. The semiconductor device according to claim 1 , wherein the principal surface of the hexagonal crystal structure is oriented off at an angle of not less than −0.5° and not more than 0° from a main plane of the hexagonal crystal structure.5. The semiconductor device according to claim 4 , wherein the main plane of the hexagonal crystal structure is an R-plane and the principal surface of the hexagonal crystal structure is oriented off at an angle of not less ...

Подробнее
Номер записи: 12
03-10-2013 дата публикации

Semiconductor laser

Номер: US20130259078A1
Автор: Kazuya OHIRA, Nobuo Suzuki
Принадлежит: Individual

A semiconductor laser of an embodiment includes: an optical resonator having a first cladding layer, a ring-shaped active layer on the first cladding layer, a ring-shaped second cladding layer on the active layer, a first electrode inside the ring shape on the first cladding layer, a ring-shaped second electrode on the second cladding layer, a first insulating layer between the first cladding layer and the active layer, formed from an inside wall toward an outside wall of the ring shape, where an outside wall side edge thereof is on an inner side than the outside wall, and a second insulating layer between the active layer and the second cladding layer, formed from the inside wall toward the outside wall, where an outside wall side edge thereof is on an inner side than the outside wall; and an optical waveguide optically coupled to the optical resonator.

Подробнее
Номер записи: 13
03-10-2013 дата публикации

GaN-Based Quantum Dot Visible Laser

Номер: US20130259079A1
Автор: Bhattacharya Pallab, Zhang Meng
Принадлежит: THE REGENTS OF THE UNIVERSITY OF MICHIGAN

A III-nitride based quantum dot (QD) laser is formed of InGaN/GaN quantum dots and capable emitting at a single wavelength within the visible region, including the violet wavelength region (400-440 nm), the blue wavelength region (440-490 nm), the green wavelength region (490-570 nm), the yellow wavelength region (570-590 nm), the orange wavelength region (590-620 nm), and the red wavelength region (620-700 nm), with varying composition as described. 1. A laser comprising:a contact layer structure for injecting conduction carriers into an active region of the laser;a semiconductor optical waveguide structure;a laser cavity; anda GaN-based quantum dot layer structure within the laser cavity and configured as the active region of the laser, the quantum dot layer structure comprising at least one layer of quantum dots each positioned and sized in a self-organizing manner to produce an emission of 400 nm-700 nm the laser cavity structure and the quantum dot layer structure being configured to produce, in response to injection of the conduction carriers into the active region via the contact layer structure, a laser output having a linewidth of less than about 1 nm.2. The laser of claim 1 , wherein the quantum dot layer structure is formed of InGaN quantum dots on a GaN substrate and capped with a GaN barrier to form InGaN/GaN quantum dots.3. The laser of claim 1 , wherein the InGaN/GaN quantum dots have an indium mole fraction of between 10%-27% to form InGaN/GaN quantum dots.4. The laser of claim 1 , wherein the quantum dot layer structure comprises a plurality of layers of quantum dots.5. The laser of claim 1 , wherein the contact layer structure comprises a p-type contact layer formed of GaN and an n-type contact layer formed of a GaN n-type doped layer.6. The laser of claim 1 , wherein the semiconductor optical waveguide structure comprises AlGaN cladding layers surrounding one or more InGaN waveguide layers positioned to confine the emission from the quantum dot ...

Подробнее
Номер записи: 14
31-10-2013 дата публикации

NITRIDE SEMICONDUCTOR LASER DIODE

Номер: US20130287055A1
Автор: MIYOSHI Takashi
Принадлежит:

A nitride semiconductor laser diode comprises a substrate; an n-side nitride semiconductor layer containing an n-type impurity and disposed on the substrate; an active layer having a light emitting layer including InAlGaN (0 Подробнее

Номер записи: 15
14-11-2013 дата публикации

LASERS WITH BEAM-SHAPE MODIFICATION

Номер: US20130301666A1
Автор: Behfar Alex A., KWONG Norman Sze-keung, Stagarescu Cristian
Принадлежит: BinOptics Corporation

A beam control structure for semiconductor lasers that allows modification of the shape of a beam allowing, for example, higher coupling into an optical fiber. The structure may comprise one or more of a tilted patio, a staircase, a reflective roof, and a reflective sidewall. 1. A semiconductor chip , comprising:a substrate;an epitaxial laser on said substrate;an etched facet; anda structure adjacent said etched facet, said structure being a patio having one of a downwardly tilt and a downwards staircase having at least one step.2. The semiconductor chip of claim 1 , further comprising reflective sidewalls.3. The semiconductor chip of claim 2 , further comprising a roof in front of said etched facet claim 2 , said roof having a lower reflective surface closer to the highest point of said etched facet than the lowest point of said etched facet.4. The semiconductor chip of claim 1 , further comprising a reflective coating deposited on said structure.5. The semiconductor chip of claim 1 , wherein said substrate is selected from the group comprising InP claim 1 , GaAs claim 1 , and GaN.6. A semiconductor chip claim 1 , comprising:a substrate;an epitaxial laser on said substrate;an etched facet; anda roof in front of said etched facet, said roof having a lower reflective surface closer to a highest point of said etched facet than a lowest point of said etched facet.7. The semiconductor chip of claim 6 , further comprising reflective sidewalls.8. The semiconductor chip of claim 6 , wherein said substrate is selected from the group comprising InP claim 6 , GaAs claim 6 , and GaN.9. A semiconductor chip claim 6 , comprising:a substrate;an epitaxial laser on said substrate;an etched facet having an angle other than 90° to a plane of the substrate;a laser beam impinging on said etched facet below a critical angle of said etched facet; anda reflective structure adjacent said etched facet.10. The semiconductor chip of claim 9 , wherein said structure is titled patio.11. The ...

Подробнее
Номер записи: 16
14-11-2013 дата публикации

SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD OF THE SAME

Номер: US20130301667A1
Автор: Imanishi Daisuke, Sato Yoshifumi
Принадлежит:

This provides a semiconductor laser device of a high light output efficiency, which is high in current confinement effect, small in leak current, and favorable in temperature property, and indicates a low threshold current, and can effectively confine laser light to a stripe region, and is favorable in beam profile. This semiconductor laser device includes the laminated structure of an n-AlInP clad layer, a superlattice active layer section, a p-AlInP first clad layer, a GaInP etching stop layer are formed, and on top of that, there are a p-AlInP second clad layer, a GaInP protective layer and a p-GaAs contact layer, which are processed into a stripe-shaped ridge. A p-side electrode is directly coated and formed on the etching stop layer of ridge top surface. 1. A semiconductor laser device comprising:an etching stop layer between a first clad layer and a second clad layer, a p-side electrode touching said second clad layer and said etching stop layer;a protective layer between said second clad layer and a contact layer, said p-side electrode touching said contact layer and said protective layer.2. The semiconductor laser device according to claim 1 , wherein a carrier concentration of said contact layer is higher than a carrier concentration of said first clad layer.3. The semiconductor laser device according to claim 1 , wherein a carrier concentration of the contact layer is higher than a carrier concentration of the second clad layer.4. The semiconductor laser device according to claim 1 , wherein said etching stop layer touches said first clad layer and said second clad layer.5. The semiconductor laser device according to claim 1 , wherein said protective layer touches said second clad layer and said contact layer.6. The semiconductor laser device according to claim 1 , wherein said etching stop layer is a GaInP layer.7. The semiconductor laser device according to claim 6 , wherein said first clad layer is a p-AlInP layer claim 6 , said second clad layer being ...

Подробнее
Номер записи: 17
21-11-2013 дата публикации

Group-iii nitride semiconductor laser device

Номер: US20130308670A1
Автор: Hiroshi Nakajima, Katsunori Yanashima, Koji Katayama, Masaki Ueno, Takao Nakamura, Takatoshi Ikegami
Принадлежит: Sony Corp, Sumitomo Electric Industries Ltd

A group-III nitride semiconductor laser device comprises: a laser structure including a semiconductor region and a support base having a semipolar primary surface of group-III nitride semiconductor; a first reflective layer, provided on a first facet of the region, for a lasing cavity of the laser device; and a second reflective layer, provided on a second facet of the region, for the lasing cavity. The laser structure includes a laser waveguide extending along the semipolar surface. A c+ axis vector indicating a <0001> axial direction of the base tilts toward an m-axis of the group-III nitride semiconductor at an angle of not less than 63 degrees and less than 80 degrees with respect to a vector indicating a direction of an axis normal to the semipolar surface. The first reflective layer has a reflectance of less than 60% in a wavelength range of 525 to 545 nm.

Подробнее
Номер записи: 18
21-11-2013 дата публикации

DIODE HAVING VERTICAL STRUCTURE

Номер: US20130308671A1
Автор: Yoo Myung Cheol
Принадлежит: LG ELECTRONICS INC.

A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode. 1. A light emitting device comprising:a first metal layer comprising Au;a second metal layer comprising Al on the first metal layer;a sapphire substrate having a first surface on the second metal layer;a GaN-based epitaxial layer on a second surface of the sapphire substrate;a transparent conductive layer on the GaN-based epitaxial layer;a first electrode on the transparent conductive layer;a first pad on the first electrode, the first pad including Au;a second electrode on an etched surface of the GaN-based epitaxial layer; anda second pad on the second electrode, the second pad including Au,wherein the first metal layer covers a bottom surface of the second metal layer, andwherein the second metal layer covers the first surface of the sapphire substrate.2. The device according to wherein the second metal layer has a multi-layer structure.3. The device according to wherein the second metal layer serves as a reflective layer.4. The device according to wherein the second metal layer comprises at least one of Al claim 1 , Ti claim 1 , Cr claim 1 , and Au.5. The device according to claim 4 , wherein the second metal layer comprises a material having different thicknesses that are contemplated.6. The device according to wherein the second metal layer comprises a polished aluminum layer.7. The device according to wherein the first metal layer is configured to serve as a bonding pad.8. The device according to wherein the sapphire substrate has a thickness of less than 120 μm.9. The device according to wherein the first surface of the sapphire substrate has an average surface roughness of less than 15 nm.10. The device according to wherein the first surface of the sapphire substrate has an average surface roughness of less than 1 nm.11. ...

Подробнее
Номер записи: 19
05-12-2013 дата публикации

HYBRID LASER INCLUDING ANTI-RESONANT WAVEGUIDES

Номер: US20130322890A1
Автор: Park Hyundai
Принадлежит:

Described are embodiments of apparatuses and systems including a hybrid laser including anti-resonant waveguides, and methods for making such apparatuses and systems. A hybrid laser apparatus may include a first semiconductor region including an active region of one or more layers of semiconductor materials from group III, group IV, or group V semiconductor, and a second semiconductor region coupled with the first semiconductor region and having an optical waveguide, a first trench disposed on a first side of the optical waveguide, and a second trench disposed on a second side, opposite the first side, of the optical waveguide. Other embodiments may be described and/or claimed. 1. A hybrid laser apparatus comprising:a first semiconductor region including an active region of one or more layers of semiconductor materials from group III, group IV, or group V semiconductor; anda second semiconductor region coupled with the first semiconductor region and having an optical waveguide, a first trench disposed on a first side of the optical waveguide, and a second trench disposed on a second side, opposite the first side, of the optical waveguide.2. The apparatus of claim 1 , wherein the optical waveguide is defined by a pair of waveguide trenches.3. The apparatus of claim 1 , wherein the second semiconductor region includes:a third trench disposed on the first side of the optical waveguide such that the first trench is between the third trench and the optical waveguide, anda fourth trench disposed on the second side of the optical waveguide such that the second trench is between the fourth trench and the optical waveguide.4. The apparatus of claim 1 , wherein a layer of the first semiconductor region is directly bonded with a layer of the second semiconductor region claim 1 , wherein the layer of the first semiconductor region is composed of indium phosphide claim 1 , and wherein the layer of the second semiconductor region is composed of silicon.5. The apparatus of claim 4 ...

Подробнее
Номер записи: 20
16-01-2014 дата публикации

Semiconductor Device and Fabrication Method

Номер: US20140016659A1
Автор: LIU Huiyun, Pozzi Francesca, Seeds Alwyn John
Принадлежит: UCL Business PLC

A semiconductor device is disclosed comprising: a substrate having a surface comprising germanium; a layer of gallium on said surface; and a layer of gallium arsenide on the gallium covered surface. The semiconductor heterostructure of gallium arsenide on germanium is fabricated by the steps of: protecting by a shutter a surface comprising germanium in an environment having a partial pressure of arsenic less than 10torr; epitaxially growing a layer of gallium on the said surface immediately after exposure of said surface; and epitaxially growing a layer of gallium arsenide on the gallium covered surface. 1. A method of fabricating a semiconductor heterostructure of gallium arsenide on germanium comprising the steps of:{'sup': '−9', 'protecting by a shutter a surface comprising germanium in an environment having a partial pressure of arsenic less than 10torr;'}epitaxially growing a layer of gallium on the said surface immediately after exposure of said surface; andepitaxially growing a layer of gallium arsenide on the gallium covered surface.2. The method of claim 1 , wherein a monolayer or more of gallium is grown said germanium surface.3. The method of claim 1 , wherein gallium claim 1 , indium claim 1 , or aluminum is grown on said germanium surface.4. The method of claim 1 , wherein said epitaxial growth is effected by molecular beam epitaxy.5. The method of claim 1 , wherein said epitaxial growth is effected by chemical vapor deposition.6. The method of claim 1 , wherein said germanium surface is a [001] oriented germanium substrate off-cut by between 1° and 6° towards the [110] direction.7. The method of claims 1 , wherein said germanium surface germanium-silicon alloy comprising from 70% to 100% germanium.8. A quantum dot laser grown on a germanium substrate by the method according to .9. A semiconductor device comprising:a substrate having a surface comprising germanium;a layer of gallium on said surface; anda layer of gallium arsenide on the gallium covered ...

Подробнее
Номер записи: 21
23-01-2014 дата публикации

SURFACE-EMITTING SEMICONDUCTOR LASER, SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING DEVICE

Номер: US20140022326A1
Автор: Kondo Takashi, NAKAYAMA Hideo, TAKEDA Kazutaka
Принадлежит:

A surface-emitting semiconductor laser includes a substrate, a first n-type semiconductor multi-layer reflecting mirror that is formed on the substrate and includes a pair of a high refractive index layer with a relatively high refractive index and a low refractive index layer with a low refractive index which are laminated, an n-type semiconductor layer that is formed on the first semiconductor multi-layer reflecting mirror, has an optical film thickness greater than an oscillation wavelength, and includes Al and Ga, an active region formed on the semiconductor layer, and a second p-type semiconductor multi-layer reflecting mirror that is formed on the active region and includes a pair of a high refractive index layer with a relatively high refractive index and a low refractive index layer with a low refractive index which are laminated, wherein an n-type impurity dopant injected into the semiconductor layer is a group VI material or Sn. 1. A surface-emitting semiconductor laser comprising:a substrate;a first n-type semiconductor multi-layer reflecting mirror that is formed on the substrate and includes a pair of a high refractive index layer with a relatively high refractive index and a low refractive index layer with a low refractive index which are laminated;an n-type semiconductor layer that is formed on the first semiconductor multi-layer reflecting mirror, has an optical film thickness greater than an oscillation wavelength, and includes Al and Ga;an active region that is formed on the semiconductor layer; anda second p-type semiconductor multi-layer reflecting mirror that is formed on the active region and includes a pair of a high refractive index layer with a relatively high refractive index and a low refractive index layer with a low refractive index which are laminated,wherein an n-type impurity dopant injected into the semiconductor layer is a group VI material or Sn.2. A surface-emitting semiconductor laser comprising:a substrate;a first p-type ...

Подробнее
Номер записи: 22
30-01-2014 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: US20140029636A1
Автор: Harada Yoshiyuki, Hung Hung, Hwang Jongil, Kushibe Mitsuhiro, Nunoue Shinya, Sugiyama Naoharu
Принадлежит: KABUSHIKI KAISHA TOSHIBA

According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting layer, a first intermediate layer, and a second intermediate layer. The n-type and p-type semiconductor layers include a nitride semiconductor. The light emitting layer is provided between the n-type and p-type semiconductor layers, and includes barrier layers and a well layer. A bandgap energy of the well layer is less than that of the barrier layers. The first intermediate layer is provided between the light emitting layer and the p-type semiconductor layer. A bandgap energy of the first intermediate layer is greater than that of the barrier layers. The second intermediate layer includes first and second portions. The first portion is in contact with a p-side barrier layer most proximal to the p-type semiconductor layer. The second portion is in contact with the first intermediate layer. 1. A semiconductor light emitting device , comprising:an n-type semiconductor layer including a nitride semiconductor;a p-type semiconductor layer including a nitride semiconductor provided on a [0001]-direction side of the n-type semiconductor layer;{'sub': xb', 'yb', '1-xb-yb', 'xw', 'yw', '1-xw-yw, 'a light emitting layer provided between the n-type semiconductor layer and the p-type semiconductor layer, the light emitting layer including a plurality of barrier layers of AlInGaN (0≦xb≦1 and 0≦yb≦1) and a well layer of AlInGaN (0≦xw≦1, xw≦xb, 0 Подробнее

Номер записи: 23
03-01-2019 дата публикации

WAVELENGTH-TUNABLE III-V/Si HYBRID OPTICAL TRANSMITTER

Номер: US20190004340A1
Автор: Krishnamoorthy Ashok V., Luo Ying, Yao Jin, Zheng Xuezhe
Принадлежит: ORACLE INTERNATIONAL CORPORATION

An optical transmitter includes a reflective semiconductor optical amplifier (RSOA) coupled to an input end of a first optical waveguide. An end of the first optical waveguide provides a transmitter output for the optical transmitter. Moreover, a section of the first optical waveguide between the input end and the output end is optically coupled to a ring modulator that modulates an optical signal based on an electrical input signal. A passive ring filter (or a 1×N silicon-photonic switch and a bank of band reflectors) is connected to provide a mirror that reflects light received from the second optical waveguide back toward the RSOA to form a lasing cavity. Moreover, the ring modulator and the passive ring filter have different sizes, which causes a Vernier effect that provides a large wavelength tuning range for the lasing cavity in response to tuning the ring modulator and the passive ring filter. 1. An optical transmitter , comprising:a reflective semiconductor optical amplifier (RSOA);a ring modulator that modulates an optical signal based on an electrical input signal;a first optical waveguide with an input end and an output end, wherein the input end is coupled to the RSOA, wherein the output end provides a transmitter output for the optical transmitter, and wherein a section of the first optical waveguide between the input end and the output end is optically coupled to the ring modulator;an array of N narrow-band reflectors, wherein each narrow-band reflector has a different center wavelength;a 1×N silicon-photonic switch, having an input port and N output ports, wherein each output port is coupled to a different narrow-band reflector in the array of N narrow-band reflectors;a second optical waveguide with a first end optically coupled to the ring modulator and a second end coupled to the input port of the 1×N silicon-photonic switch; andan adjustment mechanism that facilitates adjusting a frequency of the optical transmitter in discrete increments by ...

Подробнее
Номер записи: 24
07-01-2016 дата публикации

Method for forming aligned oxide semiconductor wire pattern and electronic device using same

Номер: US20160005599A1
Автор: Sung-Yong Min, Tae-woo Lee
Принадлежит: Academy Industry Foundation of POSTECH

A method for forming an aligned oxide semiconductor wire pattern includes: dissolving an oxide semiconductor precursor and an organic polymer in distilled water or an organic solvent to provide a composite solution of an oxide semiconductor precursor/organic polymer; continuously discharging the composite solution of the oxide semiconductor precursor/organic polymer in a vertical upper direction from a substrate to align an oxide semiconductor precursor/organic polymer composite wire on the substrate; and heating the oxide semiconductor precursor/organic polymer composite wire to remove the organic polymer and converting the oxide semiconductor precursor into an oxide semiconductor to form an aligned oxide semiconductor wire pattern.

Подробнее
Номер записи: 25
04-01-2018 дата публикации

ARRAY OF OPTOELECTRONIC STRUCTURES AND FABRICATION THEREOF

Номер: US20180006069A1
Автор: BORG MATTIAS B., Czornomaz Lukas, Deshpande Veeresh V., DJARA Vladimir, Riel Heike E., Schmid Heinz
Принадлежит:

A method of fabrication of an array of optoelectronic structures. The method first provides a crystalline substrate having cells corresponding to individual optoelectronic structures to be obtained. Each of the cells comprises an opening to the substrate. Then, several first layer portions of a first compound semiconductor material are grown in each the opening to at least partly fill a respective one of the cells and form an essentially planar film portion therein. Next, several second layer portions of a second compound semiconductor material are grown over the first layer portions that coalesce to form a coalescent film extending over the first layer portions. Finally, excess portions of materials are removed, to obtain the array of optoelectronic structures. Each optoelectronic structure comprises a stack protruding from the substrate of: a residual portion of one of the second layer portions; and a residual portion of one of the first layer portions. 1. A method of fabrication of an array of optoelectronic structures , comprising:providing a crystalline substrate with a template structure thereon, wherein the template structure comprises cells corresponding to individual optoelectronic structures to be obtained, each of the cells comprising an opening to the substrate;growing several first layer portions of a first compound semiconductor material from seeds in each said opening, for each of said first layer portions to a least partly fill a respective one of the cells and form an essentially planar film portion therein;growing several, second layer portions of a second compound semiconductor material over said first layer portions, for neighboring ones of said second layer portions to coalesce and thereby form a coalescent film extending over said first layer portions; andremoving excess portions of materials extending over one or more portions of the substrate corresponding to lateral boundaries of the cells, wherein each of the optoelectronic structures ...

Подробнее
Номер записи: 26
03-01-2019 дата публикации

MEMORY DEVICE PERFORMING UV-ASSISTED ERASE OPERATION

Номер: US20190006011A1
Автор: Oh Jin Yong
Принадлежит:

A nonvolatile memory device includes: a plurality of word lines that are stacked; a pillar structure that penetrates through the word lines in a vertical direction; and a voltage supplier suitable for supplying a plurality of biases that are required according to an operation mode, to the word lines and the pillar structure. The pillar structure includes: a vertical channel region disposed in a core; and a laser diode structure disposed between the word lines and the vertical channel region to surround a periphery of the vertical channel region. 1. A nonvolatile memory device , comprising:a plurality of word lines that are stacked;a pillar structure that penetrates through the word lines in a vertical direction; anda voltage supplier suitable for supplying a plurality of biases that are required according to an operation mode, to the word lines and the pillar structure, a vertical channel region disposed in a core; and', 'a laser diode structure disposed between the word lines and the vertical channel region to surround a periphery of the vertical channel region., 'wherein the pillar structure includes2. The nonvolatile memory device of claim 1 , wherein the laser diode structure includes:an n-type ITT-V-group compound layer and a p-type ITT-V-group compound layer that are disposed to sequentially surround the vertical channel region.3. The nonvolatile memory device of claim 1 , wherein the laser diode structure includes:an n-type GaN layer and a p-type GaN layer that are disposed to sequentially surround the vertical channel region.4. The nonvolatile memory device of claim 3 , wherein the vertical channel region includes a silicon layer.5. The nonvolatile memory device of claim 3 , wherein the p-type GaN layer has a lightly doped p-region and an intrinsic region.6. The nonvolatile memory device of claim 3 , wherein during an erase operation claim 3 , an erase bias is applied to the p-type GaN layer and a ground voltage is applied to the n-type GaN layer.7. The ...

Подробнее
Номер записи: 27
04-01-2018 дата публикации

SEMICONDUCTOR LASER SOURCE

Номер: US20180006427A1
Автор: CASALE Marco, SCIANCALEPORE Corrado
Принадлежит: Commissariat A L'Energie Atomique Et Aux Energies Alternatives

A semiconductor laser source includes a structured layer formed on a substrate made of silicon and having an upper face. The structured layer includes a passive optical component chosen from the group composed of an optical reflector and a waveguide. The component is encapsulated in silica or produced on a silica layer. At least one pad extends from a lower face of the structured layer, making direct contact with the substrate made of silicon, to an upper face flush with the upper face of the structured layer. The pad is produced entirely from silicon nitride, in order to form a thermal bridge through the structured layer. An optical amplifier is bonded directly above the passive optical component and partially to the upper face of the pad in order to dissipate the heat that it generates to the substrate made of silicon. 1. A semiconductor laser source able to emit at least one wavelength λ , said laser source comprising:a substrate made of silicon extending mainly in a plane called the “plane of the substrate”;a structured layer formed on an upper face of the substrate made of silicon and having an upper face on the opposite side to the substrate made of silicon, said structured layer comprising:a passive optical component chosen from the group composed of an optical reflector and a waveguide, said passive optical component being encapsulated in silica or produced on a silica layer; andat least one pad extending from a lower face, making direct contact with the substrate made of silicon, to an upper face flush with the upper face of the structured layer, said pad being made entirely from a material the thermal conductivity at 20° C. of which is higher than the thermal conductivity at 20° C. of silica, in order to form a thermal bridge through the structured layer; and{'sub': 'Li', 'an optical amplifier made of III-V material able, when it is supplied with power, to amplify the optical signal of wavelength λthat passes through it, said optical amplifier being bonded ...

Подробнее
Номер записи: 28
04-01-2018 дата публикации

LIGHT-EMITTING COMPONENT AND LIGHT-EMITTING DEVICE

Номер: US20180006432A1
Автор: Kondo Takashi
Принадлежит: FUJI XEROX CO., LTD.

A light-emitting component includes laser elements and a setting unit. Each laser element is set to be in an on state with a logical value “m (m represents an integer of 1 or more)”, an on state considered as having a logical value “0”, or an off state. The setting unit sets the laser element to be in a state ready to transition to an on state and sets the laser element in the state ready to transition to the on state to be in the on state considered as having a logical value “0” before a timing of setting the laser element to the on state with a logical value “m”. 1. A light-emitting component comprising:a plurality of laser elements, each laser element being set to be in an on state with a logical value “m (m represents an integer of 1 or more)”, an on state considered as having a logical value “0”, or an off state; anda setting unit that sets the laser element to be in a state ready to transition to an on state and sets the laser element in the state ready to transition to the on state to be in the on state considered as having a logical value “0” before a timing of setting the laser element to the on state with a logical value “m”.2. The light-emitting component according to claim 1 , wherein:the plurality of laser elements are divided into a plurality of groups, andthe setting unit includes a plurality of transfer pathways that transfer the state ready to transition to the on state for the respective groups so that while the laser elements of a particular group are in the on state with a logical value “m”, the laser elements of another group are set to assume the on state with a logical value “0”.3. The light-emitting component according to claim 2 , wherein the plurality of transfer pathways in the setting unit perform transfer by switching a direction of transfer between an alignment direction of the laser elements and a direction opposite to the alignment direction.4. The light-emitting component according to claim 1 , wherein the setting unit includes a ...

Подробнее
Номер записи: 29
04-01-2018 дата публикации

LASER CHIP WITH MULTIPLE OUTPUTS ON COMMON SIDE

Номер: US20180006433A1
Автор: Bijlani Bhavin, Feng Dazeng, Luff Bradley Jonathan, Tavallaee Amir Ali
Принадлежит:

A laser chip including a laser cavity that produces multiple laser outputs. A laser waveguide guides light through the laser cavity and has multiple output facets. Each of the laser outputs passes through one of the output facets. The laser waveguide guides the laser outputs such that the angle between the exit direction of different laser outputs is less than 180°. The exit direction for a laser output is the direction of propagation of light in the laser waveguide at one of the output facets. 1. An optical system , comprising: a laser waveguide guiding light through the laser cavity having multiple output facets, each of the laser outputs passing through one of the output facets,', 'the laser waveguide guiding the laser outputs such that an angle between an exit direction for different laser outputs is less than 180°, the exit direction for a laser output being a direction of propagation of light in the laser waveguide at one of the output facets; and', 'a planar optical device that receives the laser outputs from the laser chip without returning the laser outputs to the laser cavity., 'a laser chip including a laser cavity that produces laser outputs,'}2. (canceled)3. The system of claim 1 , wherein the optical device is constructed on a silicon-on-insulator wafer.4. The system of claim 1 , wherein the angle between the exit directions is less than 90°.5. The system of claim 1 , wherein the angle between the exit directions is less than 10°.6. The system of claim 1 , wherein the laser chip includes lateral sides between a top side and a bottom side and at least two of the laser outputs cross the same lateral side.7. The system of claim 1 , wherein the laser chip includes lateral sides between a top side and a bottom side and the laser chip includes an anti-reflective coating on only one of the lateral sides.8. The system of claim 1 , wherein a medium through which the laser waveguide guides the light has a chemical composition that is constant along the length of ...

Подробнее
Номер записи: 30
07-01-2021 дата публикации

INTEGRATED SEMICONDUCTOR OPTICAL AMPLIFIERS FOR SILICON PHOTONICS

Номер: US20210006044A1
Автор: Akulova Yuliya, Amiralizadeh Asl Siamak, Dosunmu Olufemi, Eftekhar Aliasghar, Fathololoumi Saeed, HONG Jin, Huang Mengyuan, Kumar Ranjeet, Liao Ling, Liu Ansheng, Malouin Christian, Nguyen Kimchau, Rong Haisheng, Sakib Meer Nazmus
Принадлежит:

Embodiments of the present disclosure are directed to a silicon photonics integrated apparatus that includes an input to receive an optical signal, a splitter optically coupled to the input to split the optical signal at a first path and a second path, a polarization beam splitter and rotator (PBSR) optically coupled with the first path or the second path, and a semiconductor optical amplifier (SOA) optically coupled with the first path or the second path and disposed between the splitter and the PBSR. Other embodiments may be described and/or claimed. 1. A silicon photonics integrated apparatus , comprising:an input to receive an optical signal;a splitter optically coupled to the input to split the optical signal into a first path and a second path;a polarization beam splitter and rotator (PBSR) optically coupled with the first path or the second path;a semiconductor optical amplifier (SOA) optically coupled with the first path or the second path and disposed between the splitter and the PBSR.2. The apparatus of claim 1 , further comprising:a modulator optically coupled to the first path and the second path, wherein the modulator is disposed between the splitter and the PBSR.3. The apparatus of claim 2 , wherein the SOA is disposed between the splitter and the modulator to amplify light received from the first path and/or the second path.4. The apparatus of claim 2 , wherein the SOA is disposed between the modulator and the PRBC.5. The apparatus of claim 2 , wherein the SOA is a first SOA that is disposed between the splitter and the modulator; andfurther comprising a second SOA that is disposed between the modulator and the PRBC.6. The apparatus of claim 2 , wherein the SOA includes Indium Phosphide (InP).7. The apparatus of claim 2 , wherein the SOA is a hybrid SOA.8. The apparatus of claim 2 , wherein the SOA is defined by silicon waveguides on a wafer of the apparatus.9. The apparatus of claim 2 , wherein the first path carries an X polarization of light and ...

Подробнее
Номер записи: 31
03-01-2019 дата публикации

SUBMOUNT, SEMICONDUCTOR DEVICE MOUNTING SUBMOUNT, AND SEMICONDUCTOR DEVICE MODULE

Номер: US20190006818A1
Автор: Minato Ryuichiro, OHKI Yutaka
Принадлежит: FURUKAWA ELECTRIC CO., LTD.

A submount on which a semiconductor device is mounted and which is mounted on a base made of metal, the submount including: a substrate; a first coating layer formed on a first surface of the substrate and made of a material having a higher coefficient of thermal expansion than that of the substrate; and a second coating layer formed on a second surface, positioned on a side opposite to the first surface, of the substrate and made of a material having a higher coefficient of thermal expansion than that of the substrate, in which a coating area of the second coating layer is smaller than a coating area of the first coating layer. 1. A submount on which a semiconductor device is mounted and which is mounted on a base made of metal , the submount comprising:a substrate;a first coating layer formed on a first surface of the substrate and made of a material having a higher coefficient of thermal expansion than that of the substrate; anda second coating layer formed on a second surface opposing to the first surface of the substrate and made of a material having a higher coefficient of thermal expansion than that of the substrate,wherein a coating area of the second coating layer is smaller than a coating area of the first coating layer.2. The submount according to claim 1 , wherein a thickness of the second coating layer is smaller than a thickness of the first coating layer.3. The submount according to claim 1 , wherein when a coefficient of thermal expansion of the second coating layer is CTE(1/K) and a coefficient of thermal expansion of the first coating layer is CTE(1/K) claim 1 , CTEis smaller than CTE.4. The submount according to claim 1 , wherein{'sub': 2', '1', 'sub', '1', '2', 'sub, 'when the coefficient of thermal expansion of the second coating layer is CTE(1/K), the coefficient of thermal expansion of the first coating layer is CTE(1/K), and a coefficient of thermal expansion of the substrate is CTE(1/K), CTEand CTEare two or more times higher than CTE, and ...

Подробнее
Номер записи: 32
12-01-2017 дата публикации

AlGaInP-BASED SEMICONDUCTOR LASER

Номер: US20170012410A1
Автор: Haruki Fukai, Masato Hagimoto, Satoshi Kawanaka, Shinji Sasaki, Tsutomu KIYOSUMI
Принадлежит: Ushio Opto Semiconductors Inc

An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (Al x Ga 1-x ) 0.5 In 0.5 P, a composition of the n-type cladding layer is expressed as (Al xn Ga 1-xn ) 0.5 In 0.5 P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (Al xp Ga 1-xp ) 0.5 In 0.5 P (0.9<xp≦1), and xn and xp satisfy a relationship of xn<xp.

Подробнее
Номер записи: 33
11-01-2018 дата публикации

SILICON PHOTONIC CHIP WITH INTEGRATED ELECTRO-OPTICAL COMPONENT AND LENS ELEMENT

Номер: US20180013262A1
Автор: Caer Charles Jean Ghislain, La Porta Antonio, Offrein Bert J.
Принадлежит:

Embodiments include a silicon photonic chip having a substrate, an optical waveguide on a surface of the substrate and a cavity. The cavity includes an electro-optical component, configured for emitting light perpendicular to said surface and a lens element arranged on top of the electro-optical component. The lens is configured for collimating light emitted by the electro-optical component. The chip also includes a deflector arranged on top of the lens element and configured for deflecting light collimated through the latter toward the optical waveguide. The lens element includes electrical conductors connected to the electro-optical component. The electrical conductors of the lens element may for instance include one or more through vias, one or more bottom electrical lines on a bottom side of the lens element (facing the electro-optical component), and at least one top electrical line. 1. A method of fabrication of a silicon photonic chip , the method comprising:providing a substrate, the substrate having an optical waveguide on a surface thereof and further exhibiting a cavity therein;providing an electro-optical component, a lens element comprising electrical conductors, and a deflector; to connect the electrical conductors of the lens element to terminals of the electro-optical component; and', 'to allow the lens element to collimate light emitted by the electro-optical component, in operation;, 'coupling the lens element to the electro-optical component, so aspositioning the coupled lens element and electro-optical component in the cavity; andarranging the deflector on top of the lens element, so as for the deflector to deflect light collimated through the lens element toward the optical waveguide, in operation.2. The method of fabrication of claim 1 , wherein the electro-optical component is configured for emitting light perpendicular to the surface of the substrate.3. The method of fabrication of claim 1 , further comprising arranging a driver for the ...

Подробнее
Номер записи: 34
14-01-2021 дата публикации

SURFACE-EMITTING LASER ARRAY, DETECTION DEVICE, AND LASER DEVICE

Номер: US20210013703A1
Автор: IKEOH TOSHIYUKI, Izumiya Kazuma, Jikutani Naoto, Numata Masayuki, UENO Tsuyoshi
Принадлежит:

A surface-emitting laser array includes a plurality of surface-emitting laser elements, a plurality of optical elements, and a light shielding member. The plurality of surface-emitting laser elements are arranged on a first surface of a substrate and configured to emit light in a direction crossing the first surface. The plurality of optical elements are arranged on a second surface opposite to the first surface of the substrate to correspond to the surface-emitting laser elements and configured to change a radiation angle of the light. The light shielding member is arranged in a region between the optical elements on the second surface of the substrate. 110-. (canceled)11. A surface-emitting laser array comprising:a plurality of surface-emitting laser elements arranged on a first surface of a substrate and configured to emit light in a direction crossing the first surface;a plurality of optical elements arranged on a second surface opposite to the first surface of the substrate to correspond to the surface-emitting laser elements and configured to change a radiation angle of the light; anda light shielding member arranged in a region between the optical elements on the second surface of the substrate.12. The surface-emitting laser array according to claim 11 , wherein the light shielding member covers a peripheral portion of each optical element of the plurality of optical elements claim 11 , the peripheral portion being a part of the optical element.13. The surface-emitting laser array according to claim 12 , wherein regions covered by the light shielding member on the optical elements are regions equal to or smaller than 10% of diameters of the optical elements.14. The surface-emitting laser array according to claim 11 , wherein the light shielding member further functions as an electrode on the second surface of the substrate.15. The surface-emitting laser array according to claim 11 , further comprising a back surface electrode made of a transparent conductive ...

Подробнее
Номер записи: 35
19-01-2017 дата публикации

MONOLITHIC NANOPHOTONIC DEVICE ON A SEMICONDUCTOR SUBSTRATE

Номер: US20170018905A1
Автор: LI NING, Sadana Devendra K.
Принадлежит:

A photonic light generating device is provided on a portion of a first semiconductor material. The photonic light generating device includes a second semiconductor material that has a different lattice constant than the lattice constant of the first semiconductor material and that is capable of generating and emitting light. The second semiconductor material of the photonic light generating device is present in a via opening that is provided into a waveguide core material and an underlying dielectric material. The via opening exposes a surface of the first semiconductor material. 1. A semiconductor structure comprising:a photonic light generating device located on a portion of a first semiconductor material having a first lattice constant, said photonic light generating device comprises a second semiconductor material having a second lattice constant that differs from the first lattice constant and that is capable of generating and emitting light, said second semiconductor material is located in a via opening that exposes a surface of said first semiconductor material, said via opening is surrounded by a material stack structure, of from bottom to top, a dielectric material structure and a waveguide core material structure.2. The semiconductor structure of claim 1 , further comprising a semiconductor material seed layer located in said via opening and located between said exposed surface of said first semiconductor material and said second semiconductor material claim 1 , said semiconductor material seed layer having a lattice constant that differs from the first lattice constant.3. The semiconductor structure of claim 2 , further comprising a third semiconductor material having a third lattice constant located in said via opening claim 2 , said third semiconductor material is located on a surface of said second semiconductor material claim 2 , and has a topmost surface that is coplanar with a topmost surface of said waveguide core material structure.4. The ...

Подробнее
Номер записи: 36
18-01-2018 дата публикации

LOW RESISTANCE VERTICAL CAVITY LIGHT SOURCE WITH PNPN BLOCKING

Номер: US20180019572A1
Автор: DEPPE DENNIS G.
Принадлежит:

A semiconductor vertical light source includes an upper mirror and a lower mirror. An active region is between the upper and lower mirror. The light source includes an inner mode confinement region and outer current blocking region. The outer current blocking region includes a common epitaxial layer that includes an epitaxially regrown interface which is between the active region and upper mirror, and a conducting channel including acceptors is in the inner mode confinement region. The current blocking region includes a first impurity doped region with donors between the epitaxially regrown interface and active region, and a second impurity doped region with acceptors is between the first doped region and lower mirror. The outer current blocking region provides a PNPN current blocking region that includes the upper mirror or a p-type layer, first doped region, second doped region, and lower mirror or an n-type layer. 1. A semiconductor vertical resonant cavity light source , comprising:an upper p-type mirror and a lower n-type mirror;an active region for light generation between said upper mirror and said lower mirror;said light source including an inner mode confinement region and an outer current blocking region;said outer current blocking region comprising a common epitaxial layer that includes an epitaxially regrown interface extending over said inner mode confinement region and over said outer current blocking region which is between said active region and said upper mirror,a conducting channel comprising acceptor impurities in said inner mode confinement region;wherein said outer current blocking region provides a PNPN current blocking region comprising said upper mirror, a first impurity doped region comprising donor impurities between said epitaxially regrown interface and said active region, a second impurity doped region comprising acceptor impurities between said first impurity doped region and said lower mirror, and said lower mirror.2. The light source ...

Подробнее
Номер записи: 37
17-01-2019 дата публикации

LOW RESISTANCE VERTICAL CAVITY LIGHT SOURCE WITH PNPN BLOCKING

Номер: US20190020176A1
Автор: DEPPE DENNIS G.
Принадлежит:

A semiconductor vertical light source includes upper and lower mirrors with an active region in between, an inner mode confinement region, and an outer current blocking region that includes a common epitaxial layer including an epitaxially regrown interface between the active region and upper mirror. A conducting channel including acceptors is in the inner mode confinement region. The current blocking region includes a first impurity doped region with donors between the epitaxially regrown interface and active region, and a second impurity doped region with acceptors between the first doped region and lower mirror. The outer current blocking region provides a PNPN current blocking region that includes the upper mirror or a p-type layer, first doped region, second doped region, and lower mirror or an n-type layer. The first and second impurity doped region force current flow into the conducting channel during normal operation of the light source. 1. A semiconductor vertical resonant cavity light source , comprising:an upper p-type mirror (upper mirror) and a lower n-type mirror (low mirror);an active region for light generation between said upper mirror and said lower mirror;said light source including an inner mode confinement region and an outer current blocking region;said outer current blocking region comprising a common epitaxial layer that includes an epitaxially regrown interface extending over said inner mode confinement region and over said outer current blocking region which is between said active region and said upper mirror,a conducting channel comprising acceptor impurities in said inner mode confinement region of said common epitaxial layer;wherein said outer current blocking region provides a PNPN current blocking region comprising said upper mirror, a first impurity doped region comprising donor impurities between said epitaxially regrown interface and said active region, a second impurity doped region comprising acceptor impurities between said first ...

Подробнее
Номер записи: 38
21-01-2021 дата публикации

WAVELENGTH DETERMINATION FOR WIDELY TUNABLE LASERS AND LASER SYSTEMS THEREOF

Номер: US20210021099A1
Автор: DE GROOTE Andreas, Simonyte Ieva, Vizbaras Augustinas, Vizbaras Kristijonas
Принадлежит:

Methods for wavelength determination of widely tunable lasers and systems thereof may be implemented with solid-state laser based photonic systems based on photonic integrated circuit technology as well as discrete table top systems such as widely-tunable external cavity lasers and systems. The methods allow integrated wavelength control enabling immediate system wavelength calibration without the need for external wavelength monitoring instruments. Wavelength determination is achieved using a monolithic solid-state based optical cavity with a well-defined transmission or reflection function acting as a wavelength etalon. The solid-state etalon may be used with a wavelength shift tracking component, e.g., a non-balanced interferometer, to calibrate the entire laser emission tuning curve within one wavelength sweep. The method is particularly useful for integrated photonic systems based on Vernier-filter mechanism where the starting wavelength is not known a-priori, or for compact widely tunable external cavity lasers eliminating the need for calibration of wavelength via external instruments. 1. A solid-state laser-based device comprising:a solid-state gain medium based widely tunable laser for emitting light;a wavelength shift tracking device for tracking a wavelength shift of the emitted light; anda solid-state based etalon comprising an optical element having at least one of an unambiguous transmission spectrum or an unambiguous reflection spectrum,wherein, during a wavelength sweep of the widely tunable laser, the solid-state based etalon and wavelength shift tracking device are configured to cooperate to provide absolute wavelength determination and control of the widely tunable laser.2. The solid-state laser-based device of claim 1 , wherein during the wavelength sweep claim 1 , the wavelength shift tracking device provides an output of wavelength shift as a function of time claim 1 , and the solid state etalon provides an output of a signal with information ...

Подробнее
Номер записи: 39
23-01-2020 дата публикации

Semiconductor device and fabrication method

Номер: US20200028317A1
Автор: Alwyn Seeds, Huiyun Liu, Jiang Wu, Mengya LIAO, Mingchu TANG, Siming Chen, Suguo Huo
Принадлежит: UCL BUSINESS LTD

Disclosed herein is a semiconductor device comprising: a silicon substrate; a germanium layer; and a buffer layer comprised of at least one layer of III-V compound, formed directly on silicon; at least one layer containing III-V compound quantum dots wherein one or more facets are formed using focused ion beam etching such that the angle between the plane of the facet is normal to the plane of growth.

Подробнее
Номер записи: 40
31-01-2019 дата публикации

TEMPLATE-BASED EPITAXIAL GROWTH OF LATTICE MISMATCHED MATERIALS ON SILICON

Номер: US20190033524A1
Автор: BLUMIN Marina, Ruda Harry E., SAVELYEV Igor, SOUZA Christina F.
Принадлежит:

The embodiments of the present disclosure describe forming a semiconductor layer (e.g., III-V semiconductor material) on a silicon substrate using a template. In one embodiment, the template is patterned to form a plurality of cylindrical openings or pores that expose a portion of the underlying silicon substrate. The material of the semiconductor is disposed into the pores to form individual crystals or monocrystals. Because of the lattice mismatch between the crystalline silicon substrate and the material of the semiconductor layer, the monocrystals may include defects. However, the height of the pores is controlled such that these defects terminate at a sidewall of the template. Thus, the monocrystals can be used to form a single sheet (or single crystal) semiconductor layer above that template that is defect free. 1. A photonic device , comprising:a crystalline silicon substrate;a template comprising an inert material disposed on the silicon substrate, wherein the template comprises a plurality of pores that extends from a top surface of the template to the silicon substrate,wherein a respective monocrystal of a semiconductor material is disposed in each of the plurality of pores, and wherein the semiconductor material has a different lattice constant than the silicon substrate; anda semiconductor layer disposed on the top surface, wherein the semiconductor layer is epitaxially disposed on the respective monocrystals to form a single crystalline layer.2. The photonic device of claim 1 , wherein each of the plurality of pores contains only one monocrystal.3. The photonic device of claim 1 , wherein at least one of the respective monocrystal contains a defect resulting from lattice mismatch claim 1 , wherein the defect extends at an offset angle relative to a surface of the silicon substrate on which the template is disposed.4. The photonic device of claim 3 , wherein the defect terminates at a sidewall of one of the plurality of pores claim 3 , wherein the ...

Подробнее
Номер записи: 41
31-01-2019 дата публикации

METHOD OF PRODUCING A PLURALITY OF LASER DIODES AND LASER DIODE

Номер: US20190036294A1
Автор: Gerhard Sven
Принадлежит:

A method of producing a plurality of laser diodes includes providing a plurality of laser bars in a compound, wherein the laser bars each include a plurality of laser diode elements arranged side by side, the laser diode elements each have a common substrate and a semiconductor layer sequence arranged on the substrate, and a splitting of the compound at a longitudinal separation line running between two adjacent laser bars in each case leads to formation of laser facets of the laser diodes to be produced, and structuring the compound at at least one longitudinal separation line, wherein a strained compensation layer is applied to the semiconductor layer sequence at least at the longitudinal separation line or the semiconductor layer sequence is at least partially removed. 1. A method of producing a plurality of laser diodes comprising:providing a plurality of laser bars in a compound, wherein the laser bars each comprise a plurality of laser diode elements arranged side by side, the laser diode elements each have a common substrate and a semiconductor layer sequence arranged on the substrate, and a splitting of the compound at a longitudinal separation line running between two adjacent laser bars in each case leads to formation of laser facets of the laser diodes to be produced, andstructuring the compound at at least one longitudinal separation line, wherein a strained compensation layer is applied to the semiconductor layer sequence at least at the longitudinal separation line or the semiconductor layer sequence is at least partially removed.2. The method according to claim 1 , wherein the laser diode elements are each formed on a first main surface with a contact region and a connection layer claim 1 , and the contact region is applied on a side of the connection layer remote from the semiconductor layer sequence claim 1 , and at least the contact regions or connection layers of two laser diode elements directly adjacent at a longitudinal separation line are ...

Подробнее
Номер записи: 42
30-01-2020 дата публикации

LIGHT SOURCE DEVICE

Номер: US20200036158A1
Автор: Miyata Tadaaki, TAKEDA Hideaki
Принадлежит: NICHIA CORPORATION

A light source device includes at least one first wiring, a plurality of second wirings, a plurality of light emitting elements each having a lower-surface-side electrode connected to a respective one of the at least one first wiring, a plurality of protective elements each having a lower-surface-side electrode connected to a respective one of the plurality of second wirings each corresponding to a respective one of the plurality of light emitting elements, each of the plurality of protective elements connected to a respective one of the plurality of light emitting elements, a plurality of first wirings each connecting an upper-surface-side electrode of each of the plurality of light emitting elements and a respective one of the plurality of second wirings, a plurality of second wires each connecting the upper-surface-side electrodes of two adjacent ones of the protective elements; and a plurality of third wires each connecting an upper-surface-side electrode of a respective one of the plurality of protective elements and a corresponding one of the at least one first wiring. The upper-surface-side electrodes of the plurality of light emitting elements and the upper-surface-side electrodes of the plurality of protective elements are of a same polarity, and the plurality of first wires are disposed below the plurality of second wires. 1. A light source device comprising:at least one first wiring;a plurality of second wirings;a plurality of light emitting elements each having a lower-surface-side electrode connected to a respective one of the at least one first wiring;a plurality of protective elements each having a lower-surface-side electrode connected to a respective one of the plurality of second wirings each corresponding to a respective one of the plurality of light emitting elements, each of the plurality of protective elements connected to a respective one of the plurality of light emitting elements;a plurality of first wirings each connecting an upper-surface- ...

Подробнее
Номер записи: 43
30-01-2020 дата публикации

LASER

Номер: US20200036162A1
Автор: Chen Xin
Принадлежит:

An example laser has a rear reflector, a front facet spaced from the rear reflector, and a laser cavity defined between the rear reflector and the front facet. The laser comprises a Bragg grating located in the laser cavity, where a length of the Bragg grating (L) is in a range from 40% to 60% of a distance from the rear reflector to front of the Bragg grating, and a grating strength (Kappa*L) is in a range from 0.6 to 1.5. 1. A laser having a rear reflector , a front facet spaced from the rear reflector and a laser cavity defined between the rear reflector and the front facet , the laser comprising a Bragg grating located in the laser cavity , wherein a length of the Bragg grating (L) is in a range from 40% to 60% of a distance from the rear reflector to front of the Bragg grating and wherein a grating strength (Kappa*L) is in a range from 0.6 to 1.5.2. The laser of claim 1 , wherein the laser is a distributed feedback laser.3. The laser of claim 1 , wherein the Bragg grating is elongated along a length of the laser cavity.4. The laser of claim 1 , wherein the length of the Bragg grating (L) is in a range from 45% to 55% of the distance from the rear reflector to the front of the Bragg grating.5. The laser of claim 1 , wherein the grating strength is in a range from 0.8 to 1.3.6. The laser of claim 1 , wherein the laser is configured to function claim 1 , in operation claim 1 , in Fabry-Perot mode.7. The laser of claim 6 , wherein the laser is configured such that if material defining the laser cavity is cut to form a new front facet not more than 100 nm closer to the rear reflector than the said front facet claim 6 , the new front facet having a same reflectivity as the said front facet claim 6 , the laser claim 6 , in operation claim 6 , functions in the Fabry-Perot mode.8. The laser of claim 1 , wherein the front facet is a cleaved facet.9. The laser of claim 1 , wherein the front facet is coated with an anti-reflection coating.10. The laser of claim 1 , wherein ...

Подробнее
Номер записи: 44
04-02-2021 дата публикации

Semiconductor structure with chirp layer

Номер: US20210036183A1
Автор: Guilherme Tosi, Norbert Krause
Принадлежит: Silanna UV Technologies Pte Ltd

A semiconductor structure can comprise a plurality of first semiconductor layers comprising wide bandgap semiconductor layers, a narrow bandgap semiconductor layer, and a chirp layer between the plurality of first semiconductor layers and the narrow bandgap semiconductor layer. The values of overlap integrals between different electron wavefunctions in a conduction band of the chirp layer can be less than 0.05 for intersubband transition energies greater than 1.0 eV, and/or the values of overlaps between electron wavefunctions and barrier centers in a conduction band of the chirp layer can be less than 0.3 nm −1 , when the structure is biased at an operating potential. The chirp layer can comprise a short-period superlattice with alternating wide bandgap barrier layers and narrow bandgap well layers, wherein the thickness of the barrier layers, or the well layers, or the thickness of both the barrier and well layers changes throughout the chirp layer.

Подробнее
Номер записи: 45
12-02-2015 дата публикации

LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME

Номер: US20150043601A1
Автор: FUTAGAWA NORIYUKI, HAMAGUCHI TATSUSHI, Kuramoto Masaru, Maeda Yuki
Принадлежит:

A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer. 1. A method of manufacturing a light emitting element comprising , sequentially:(a) forming a first light reflecting layer having a convex shape formed from a multilayer film on a substrate for manufacturing a light emitting element;(b) forming a layered structure body by layering a first compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, an active layer formed from a GaN-based compound semiconductor, which contacts the second surface of the first compound semiconductor layer, and a second compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, and in which the first surface contacts the active layer on the substrate for manufacturing a light emitting element that includes the first light reflecting layer;(c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film;(d) fixing the second light ...

Подробнее
Номер записи: 46
12-02-2015 дата публикации

METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT

Номер: US20150044795A1
Автор: FUTAGAWA NORIYUKI, HAMAGUCHI TATSUSHI, Kuramoto Masaru
Принадлежит:

A method of manufacturing a light emitting element includes, sequentially, (a) forming a mask layer for selective growth; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the mask layer; and (f) forming a first light reflecting layer formed from a multilayer film and a first electrode on the first surface of the first compound semiconductor layer. 1. A method of manufacturing a light emitting element comprising , sequentially:(a) forming a mask layer for selective growth formed from a material different from a material that configures a first compound semiconductor layer on a region outside an element forming region on a substrate for manufacturing a light emitting element;(b) forming a layered structure body by layering a first compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, an active layer formed from a GaN-based compound semiconductor, which contacts the second surface of the first compound semiconductor layer, and a second compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, and in which the first surface contacts the active layer on the element forming region;(c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film;(d) fixing the second light reflecting layer to a support substrate;(e) ...

Подробнее
Номер записи: 47
06-02-2020 дата публикации

INTEGRATED WAVEGUIDE COUPLER

Номер: US20200041732A1
Автор: Creazzo Timothy, Krasulick Stephen B., Marchena Elton, Mizrahi Amit, Van Orden Derek
Принадлежит:

A waveguide coupler includes a first waveguide and a second waveguide. The waveguide coupler also includes a connecting waveguide disposed between the first waveguide and the second waveguide. The connecting waveguide includes a first material having a first index of refraction and a second material having a second index of refraction higher than the first index of refraction. 1. (canceled)2. An integrated waveguide coupler comprising:a semiconductor waveguide configured to guide light in a direction of beam propagation;a cladding surrounding the semiconductor waveguide, wherein the cladding has a lower refractive index than the semiconductor waveguide; the opto-electronic device comprises a facet;', 'the facet has an orientation identified by a direction normal to the facet;', 'the direction normal to the facet is not parallel with the direction of beam propagation of the semiconductor waveguide; and, 'an opto-electronic device, whereinthe opto-electronic device is configured to guide light to pass through the facet; and the direction of beam propagation is ascertained at an interface between the semiconductor waveguide and the connecting waveguide;', 'the semiconductor waveguide has a height;', 'the connecting waveguide has a height; and', 'the height of the connecting waveguide is equal to the height of the semiconductor waveguide., 'a connecting waveguide between the semiconductor waveguide and the facet of the opto-electronic device, wherein3. The integrated waveguide coupler as recited in claim 2 , wherein the opto-electronic device comprises III-V material.4. The integrated waveguide coupler as recited in claim 2 , wherein the connecting waveguide has a length between 1 and 100 microns.5. The integrated waveguide coupler as recited in claim 2 , wherein the integrated waveguide coupler comprises a first material directly under the connecting waveguide having a first index of refraction claim 2 , and the connecting waveguide comprises a second material having a ...

Подробнее
Номер записи: 48
18-02-2021 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20210050706A1
Автор: KURAMOTO Kyosuke, KUSUNOKI Masatsugu, NISHIDA Takehiro
Принадлежит: Mitsubishi Electric Corporation

A method for manufacturing a semiconductor device includes: heating solder to wetly spread toward a first end face or a second end face of a submount substrate under restriction on the wet spreading by a burr to form an extending part, so that the extending part directly connects a laser chip and a barrier layer. 1. A method for manufacturing a semiconductor device , comprising:preparing a submount, the submount including a submount substrate having a first end face and a second end face opposite to the first end face, an electrode layer provided on the submount substrate, a barrier layer provided on the electrode layer, the barrier layer extending to only at least one of the first end face and the second end face among end faces of the submount substrate in a plan view, a burr provided on a side face of the barrier layer and higher than the barrier layer, and solder provided on the barrier layer so as to be set back from all the end faces of the submount substrate in a plan view;placing a laser chip on the solder, the laser chip having a light emitting stripe region and adjacent regions on left and right of the light emitting stripe region, and positioning the laser chip directly above the first end face and directly above the second end face; andheating the solder to wetly spread toward the first end face or the second end face under restriction on the wet spreading by the burr to form an extending part, so that the extending part directly connects the laser chip and the barrier layer, whereina length of the solder in an orthogonal direction decreases from one of a first end face side and a second end face side toward another, the orthogonal direction being a direction orthogonal to a resonator direction of the laser chip.2. The method for manufacturing a semiconductor device according to claim 1 , whereinthe barrier layer extends to the first end face and the second end face in a plan view and the extending part extends to the first end face and the second end ...

Подробнее
Номер записи: 49
03-03-2022 дата публикации

SEMICONDUCTOR LASER DIODE INTEGRATED WITH MEMRISTOR

Номер: US20220069541A1
Автор: LIANG DI, STRACHAN John Paul, Tossoun Bassem
Принадлежит:

An optical device includes a light-emitting device integrated with a memory device. The memory device include a first electrode and a second electrode, and the light-emitting device includes a third electrode and the second electrode. In such configuration, a first voltage between the second electrode and the third electrode causes the light-emitting device to emit light of a first wavelength, and a second voltage between the first electrode and the second electrode while the memory device is at OFF state causes the light-emitting device to emit light of a second wavelength shorter than the first wavelength or while the memory device is at ON state causes the light-emitting device to emit light of a third wavelength longer than the first wavelength. 1. An optical device , comprising:a light-emitting device disposed on a substrate through a dielectric layer, the light-emitting device including a first semiconductor layer configured to emit light, wherein the substrate comprises a second semiconductor layer in contact with the dielectric layer;a memory device integrated with the light-emitting device, wherein the memory device includes the first semiconductor layer of the light-emitting device, the dielectric layer, and the substrate, wherein the second semiconductor layer has a first portion for the light-emitting device and a second portion for the memory device, wherein the memory device comprises a first electrode coupled to the second portion of the second semiconductor layer and a second electrode coupled to the first semiconductor layer, and the light-emitting device comprises a third electrode coupled to the first portion of the second semiconductor layer and the second electrode; and provide a first voltage between the second electrode and the third electrode to cause the light-emitting device to emit light of a first wavelength and provide a second voltage between the first electrode and the second electrode while the memory device is at OFF state to cause ...

Подробнее
Номер записи: 50
14-02-2019 дата публикации

Semiconductor Laser Diode

Номер: US20190052055A1
Автор: Eichler Christoph, Gerhard Sven, Rumbolz Christian
Принадлежит:

A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence having at least one active layer and a ridge waveguide structure having a ridge extending in a longitudinal direction from a light output surface to a rear side surface and being delimited by ridge side surfaces in a lateral direction perpendicular to a longitudinal direction, wherein the ridge has a first region and a second region adjacent thereto in a vertical direction perpendicular to the longitudinal and lateral directions, wherein the ridge includes a first semiconductor material in the first region and at least one second semiconductor material different from the first semiconductor material in the second region, wherein the ridge has a first width in the first region, and wherein the ridge has a second width in the second region, the second width being larger than the first width. 1. A semiconductor laser diode comprising:a semiconductor layer sequence having at least one active layer and a ridge waveguide structure having a ridge extending in a longitudinal direction from a light output surface to a rear side surface and being delimited by ridge side surfaces in a lateral direction perpendicular to a longitudinal direction,wherein the ridge has a first region and a second region adjacent thereto in a vertical direction perpendicular to the longitudinal and lateral directions,wherein the ridge comprises a first semiconductor material in the first region and at least one second semiconductor material different from the first semiconductor material in the second region,wherein the ridge has a first width in the first region, andwherein the ridge has a second width in the second region, the second width being larger than the first width.2. The semiconductor laser diode according to claim 1 , wherein a transition from the first to the second region is stepped.3. The semiconductor laser diode according to claim 1 , wherein the second ...

Подробнее
Номер записи: 51
14-02-2019 дата публикации

OPTOELECTRONIC COMPONENT

Номер: US20190052060A1
Автор: Gerhard Sven, Lell Alfred, Löffler Andreas, Vierheilig Clemens
Принадлежит:

An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation, wherein the active zone is arranged in a plane, the layer structure includes a top side and four side faces, the first and third side faces are arranged opposite one another, the second and fourth side faces are arranged opposite one another, a strip-type ridge structure is arranged on the top side of the layer structure, the ridge structure extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, and the second recess extends as far as the second side face. 120-. (canceled)21. An optoelectronic component comprising a layer structure comprising an active zone that generates electromagnetic radiation , wherein the active zone is arranged in a plane , the layer structure comprises a top side and four side faces , the first and third side faces are arranged opposite one another , the second and fourth side faces are arranged opposite one another , a strip-type ridge structure is arranged on the top side of the layer structure , the ridge structure extends between the first side face and the third side face , the first side face constitutes an emission face for electromagnetic radiation , a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure , a second recess is introduced into the first recess , the second recess extends as far as the second side face , the first recess extends over an entire length of the laser diode from the first side face as far as the third side face along the second side face , the first recess extends as far as the second side face , the second recess is introduced into a first base face of the first recess , the second recess ...

Подробнее
Номер записи: 52
25-02-2021 дата публикации

MULTI-WAVELENGTH LASER GENERATOR USING RING FILTER

Номер: US20210057880A1
Автор: HUANG Duanni, Jones Richard, Kumar Ranjeet, Mehta Karan, Rong Haisheng, Su Guan-Lin
Принадлежит:

Embodiments of the present disclosure are directed to multi-wavelength laser generator may produce light with a frequency comb having equally spaced frequency lines. In various embodiments, the laser generator includes first, a semiconductor gain element is used to provide gain to the laser being generated. Second, a ring resonator filter, or ring filter, is used to select the wavelength comb spacing. Third, a narrow-band DBR or narrow-band mirror is used to select the number of wavelengths that lase. Fourth, a wide-band or narrow-band mirror is used to provide optical feedback and to form the optical cavity. Fifth, a phase tuner section is used to align the cavity modes with the ring resonances (i.e. the ring filter modes) in order to reduce or minimize the modal loss. Other embodiments may be described and/or claimed. 1. A laser apparatus , comprising:a laser source to output light;one or more mirrors optically coupled to the laser source and arranged to facilitate emission of the light in a plurality of modes;a gain element optically coupled with the mirror;a phase tuner, optically coupled with the gain element, to tune wavelengths of a plurality of modes of the laser source; anda ring filter optically coupled with the phase tuner to select spacing between the modes of the laser.2. The laser apparatus of claim 1 , wherein the ring filter comprises a tunable ring filter.3. The laser apparatus of claim 1 , wherein at least one of the one or more mirrors is a distributed Bragg reflector (DBR) or a mirror with a controllable stop-band width at a lasing wavelength range.4. The laser apparatus of claim 1 , wherein the plurality of modes is predetermined.5. The laser apparatus of claim 1 , wherein the emission of light includes a frequency comb.6. The laser apparatus of claim 1 , wherein the gain element is the only gain element in the laser apparatus.7. The laser apparatus of claim 1 , wherein a radius of the ring filter determines a frequency spacing between the modes ...

Подробнее
Номер записи: 53
13-02-2020 дата публикации

HYDROGEN DIFFUSION BARRIER FOR HYBRID SEMICONDUCTOR GROWTH

Номер: US20200052137A1
Автор: Liu Ting, MAROS AYMERIC, SHELDON MICHAEL, Suarez Ferran, THORP JACOB
Принадлежит: ARRAY PHOTONICS, INC.

Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride active layer and at least one semiconductor material overlying the dilute nitride active layer are disclosed. Hybrid epitaxial growth and the use of hydrogen diffusion barrier layers to minimize hydrogen diffusion into the dilute nitride active layer are used to fabricate high-efficiency multijunction solar cells and photonic devices. Hydrogen diffusion barriers can be formed through the use of layer thickness, composition, doping and/or strain. 1. A semiconductor device comprising: a dilute nitride material selected from GaNAs, GaInNAs, GaInNAsSb, GaInNAsBi, GaInNAsSbBi, GaNAsSb, GaNAsBi, and GaNAsSbBi;', {'sup': 16', '−3, 'a background doping concentration less than 5×10cm; and'}, 'a hydrogen-induced defect density less than the background doping density;, 'a dilute nitride active layer, wherein the dilute nitride active layer comprisesa hydrogen diffusion barrier region overlying the dilute nitride active layer, wherein the hydrogen diffusion barrier region comprises a doped semiconductor layer, a dilute nitride semiconductor layer, a strained semiconductor layer, or a combination of any of the foregoing; andone or more semiconductor layers overlying the hydrogen diffusion barrier region.2. The semiconductor device of claim 1 , wherein the hydrogen diffusion barrier region is adjacent the dilute nitride active layer claim 1 , without any intervening semiconductor layers.3. The semiconductor device of claim 1 , wherein the hydrogen diffusion barrier region comprises a doped semiconductor layer.4. The semiconductor device of claim 3 , wherein the doped semiconductor layer comprises a dopant selected from C claim 3 , Be claim 3 , Zn claim 3 , Si claim 3 , Se claim 3 , Te claim 3 , and a combination of any of the foregoing.5. The semiconductor device of claim 3 , wherein the doped semiconductor layer comprises a doping level between 1×10cmand 2×10cm.6. The semiconductor ...

Подробнее
Номер записи: 54
10-03-2022 дата публикации

Integrated waveguide coupler

Номер: US20220075130A1
Автор: Amit Mizrahi, Derek Van Orden, Elton MARCHENA, Stephen B. Krasulick, Timothy Creazzo
Принадлежит: Skorpios Technologies Inc

A waveguide coupler includes a first waveguide and a second waveguide. The waveguide coupler also includes a connecting waveguide disposed between the first waveguide and the second waveguide. The connecting waveguide includes a first material having a first index of refraction and a second material having a second index of refraction higher than the first index of refraction.

Подробнее
Номер записи: 55
21-02-2019 дата публикации

MODE-LOCKED SEMICONDUCTOR LASER CAPABLE OF CHANGING OUTPUT-COMB FREQUENCY SPACING

Номер: US20190058304A1
Автор: De Valicourt Guilhem, Eggleston Michael S.
Принадлежит: NOKIA SOLUTIONS AND NETWORKS OY

A mode-locked semiconductor laser capable of changing the spacing between the carrier frequencies of its output comb. In an example embodiment, the mode-locked semiconductor laser is implemented as a hybrid solid-state device comprising a III-V semiconductor chip and a silicon chip attached to one another to form a laser cavity. The III-V semiconductor chip includes a gain medium configured to generate light in response to being electrically and/or optically pumped. The silicon chip includes a plurality of optical waveguides arranged to provide multiple optical paths of different effective lengths for the light generated in the laser cavity. Different optical paths can be controllably selected, using one or more optical switches connected between the optical waveguides, to change the effective optical length of the laser cavity and, as a result, the output-comb frequency spacing. In some embodiments, the output-comb frequency spacing can be changeable at least by a factor of 1.5. 1. An apparatus comprising:a laser cavity including an optical waveguide and a waveguide circuit connected between a first light reflector and a second light reflector, the optical waveguide including an active section and a mode-locking section, the active section being configured to generate light in response to an electrical current being driven therethrough, the mode-locking section being configured to modulate the light to cause an optical pulse train to be emitted from the laser cavity through the first light reflector;wherein the waveguide circuit comprises one or more optical switches configured to connect the optical waveguide and the second light reflector using a plurality of optical paths through the waveguide circuit; andwherein at least two of the plurality of optical paths have different respective optical lengths.2. The apparatus of claim 1 , wherein the one or more optical switches are configurable to select any one of the plurality of optical paths to optically connect the ...

Подробнее
Номер записи: 56
02-03-2017 дата публикации

SEMICONDUCTOR LASER DEVICE

Номер: US20170063032A1
Автор: KOMODA Daisuke, MORIZUMI Naoto, Nakagawa Takashi, NAMIE Takashi, SHOZUI Hiroaki
Принадлежит:

A semiconductor laser device includes a base, a semiconductor laser element, a lid, a support member, a wavelength converting member, a holding member, and a buffer material. The lid has a recess formed in an upper portion of the lid, and a through-hole formed in the bottom of the recess. The support member is disposed in the recess and has a through-hole. A diameter of the through-hole of the support member is smaller than that of the through-hole of the lid. A coefficient of thermal expansion of the support member is different from that of the lid. The wavelength converting member is supported in the through-hole of the support member. The holding member is fixed to the lid and holds the support member. The buffer material is disposed in at least a part of a space to between the lateral surfaces of the recess and the support member. 1. A semiconductor laser device comprising:a base;a semiconductor laser element provided above the base;a lid provided over the base and housing the semiconductor laser element, the lid having a recess formed in an upper portion of the lid with the recess being defined by a lateral surface and a bottom, and the lid having a through-hole formed in the bottom of the recess;a support member disposed in the recess and having a through-hole disposed above the through-hole of the lid, a diameter of the through-hole of the support member being smaller than a diameter of the through-hole of the lid, the support member having a coefficient of thermal expansion that is different from a coefficient of thermal expansion of the lid, and the support member having a lateral surface spaced apart from the lateral surface of the recess;a wavelength converting member supported in the through-hole of the support member;a holding member fixed to the lid and holding an upper surface of the support member; anda buffer material disposed in at least a part of a space between the lateral surface of the recess and the lateral surface of the support member.2. The ...

Подробнее
Номер записи: 57
02-03-2017 дата публикации

PHOTONIC INTEGRATED CIRCUITS BASED ON QUANTUM CASCADE STRUCTURES

Номер: US20170063043A1
Автор: Diehl Laurent, Goyal Anish K., Pfluegl Christian, Wang Christine A., Witinski Mark Francis
Принадлежит:

Photonic integrated circuits (PICs) are based on quantum cascade (QC) structures. In embodiment methods and corresponding devices, a QC layer in a wave confinement region of an integrated multi-layer semiconductor structure capable of producing optical gain is depleted of free charge carriers to create a low-loss optical wave confinement region in a portion of the structure. Ion implantation may be used to create energetically deep trap levels to trap free charge carriers. Other embodiments include modifying a region of a passive, depleted QC structure to produce an active region capable of optical gain. Gain or loss may also be modified by partially depleting or enhancing free charge carrier density. QC lasers and amplifiers may be integrated monolithically with each other or with passive waveguides and other passive devices in a self-aligned manner. Embodiments overcome challenges of high cost, complex fabrication, and coupling loss involved with material re-growth methods. 1. A method comprising:forming an integrated multi-layer semiconductor structure including a wave confinement region comprising a quantum cascade layer, the wave confinement region having first and second portions with an initial density of free charge carriers in the quantum cascade layer; andmodifying the initial density of free charge carriers in the quantum cascade layer within the second portion of the wave confinement region to be substantially different from the initial density.2. The method of claim 1 , wherein the initial density of free charge carriers is sufficiently low that the formed first and second portions of the wave confinement region are passive in a wavelength spectrum claim 1 , and wherein modifying the initial density comprises increasing the initial density in the quantum cascade layer in the second portion of the wave confinement region to a level sufficient to produce optical gain in the quantum cascade layer in the wavelength spectrum.3. The method of claim 1 , ...

Подробнее
Номер записи: 58
29-05-2014 дата публикации

Cerium doped magnesium barium tungstate luminescent thin film, manufacturing method and application thereof

Номер: US20140145114A1
Автор: Hui Huang, Jixing Chen, Mingjie Zhou, PING Wang
Принадлежит: Oceans King Lighting Science and Technology Co Ltd

Cerium doped magnesium barium tungstate luminescent thin film, manufacturing method and application thereof are provided, said method for manufacturing cerium doped magnesium barium tungstate luminescent thin film comprises the following steps: mixing MgO, BaO, WO 3 and Ce 2 O 3 , sintering for forming sputtering target, forming the precursor of cerium doped magnesium barium tungstate luminescent thin film by magnetron sputtering, annealing the precursor of cerium doped magnesium barium tungstate luminescent thin film, and then forming cerium doped magnesium barium tungstate luminescent thin film. Said cerium doped magnesium barium tungstate luminescent thin film exhibits high luminescence efficiency and high light emitting peaks in red and blue regions. Said method presents the advantages of simplified operation, less cost, and suitable for industrial preparation.

Подробнее
Номер записи: 59
28-02-2019 дата публикации

METHOD OF MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE

Номер: US20190067913A1
Автор: TAJI Tomokazu
Принадлежит: NICHIA CORPORATION

A method of manufacturing a light emitting device includes: providing a light emitting device in which a first and second semiconductor laser elements are connected in series; performing a first measurement that includes supplying current to the first semiconductor laser element to measure at least one property of the first semiconductor laser element, and supplying current to the second semiconductor laser element to measure at least one property of the second semiconductor laser element; supplying current to the first and second semiconductor laser elements for a length of time; performing a second measurement that includes supplying current to the first semiconductor laser element to measure the at least one property of the first semiconductor laser element, and supplying current to the second semiconductor laser element to measure the at least one property of the second semiconductor laser element, and evaluating the first and second semiconductor laser elements. 1. A method of manufacturing a light emitting device , the method comprising , in this order: a base comprising a first wiring, a second wiring, and a third wiring,', 'a first semiconductor laser element electrically connected to the first wiring and the second wiring, at an upper surface side of the base, and', 'a second semiconductor laser element electrically connected to the second wiring and the third wiring, at the upper surface side of the base,', 'wherein the first semiconductor laser element and the second semiconductor laser element are connected in series;, 'providing a light emitting device comprising supplying electric current to the first semiconductor laser element through the first wiring and the second wiring to measure at least one property of the first semiconductor laser element, the at least one property of the first semiconductor laser element including at least one of an electrical property or an optical property, and', 'supplying electric current to the second semiconductor laser ...

Подробнее
Номер записи: 60
27-02-2020 дата публикации

Surface-Mountable Semiconductor Laser, Arrangement with Such a Semiconductor Laser and Operating Method for Same

Номер: US20200067270A1
Автор: HALBRITTER Hubert, Müller Martin
Принадлежит:

A surface-mountable semiconductor laser and an arrangement with such a semiconductor laser are disclosed. In one embodiment, the semiconductor laser is includes a semiconductor layer sequence having at least one generation region between a p-side and an n-side, at least two contact surfaces for external electrical contacting of the p-side and the n-side, wherein the contact surfaces are located on the same side of the semiconductor layer sequence in a common plane so that the semiconductor laser are contactable without bonding wires, at least one of a plurality of conductor rails extending from a side with the contact surfaces across the semiconductor layer sequence and a plurality of through-connections running at least through the generation region, wherein the generation region is configured to be pulse operated with time-wise current densities of at least A/mm. 114-. (canceled)15. A surface-mountable semiconductor laser comprising:a semiconductor layer sequence having at least one generation region between a p-side and an n-side, the generation region configured to generate laser radiation;at least two contact surfaces for external electrical contacting the p-side and the n-side, wherein the contact surfaces are located on the same side of the semiconductor layer sequence in a common plane so that the semiconductor laser is contactable without bonding wires;at least one of a plurality of conductor rails extending from a side with the contact surfaces completely across the semiconductor layer sequence and, viewed in a plan view, adjoining an edge of the semiconductor layer sequence so that the conductor rails are only partly surrounded by a material of the semiconductor layer sequence; anda plurality of through-connections running at least completely through the generation region coming from the side of the contact surfaces and, viewed in a plan view, lie within the semiconductor layer sequence so that the through-connections are surrounded all around by a ...

Подробнее
Номер записи: 61
19-03-2015 дата публикации

Semiconductor substrate and method of forming

Номер: US20150076512A1
Автор: Bernard Beaumont, Jean-Pierre Faurie
Принадлежит: Saint Gobain Cristaux and Detecteurs SAS

A method of forming a semiconductive substrate material for an electronic device including forming a plurality of semiconductive layers on a substrate during a continuous growth process in a reaction chamber, wherein during the continuous growth process, a release layer is formed between a base layer and an epitaxial layer by altering at least one growth process parameter during the continuous growth process. The method also including separating the plurality of semiconductive layers from the substrate.

Подробнее
Номер записи: 62
11-03-2021 дата публикации

LIGHT EMITTING DEVICE INCLUDING BASE AND BASE CAP

Номер: US20210075195A1
Автор: TAJI Tomokazu
Принадлежит: NICHIA CORPORATION

A light emitting device includes: a base comprising a first wiring, a second wiring, and a third wiring; a first semiconductor laser element electrically connected to the first wiring and the second wiring, at an upper surface side of the base; a second semiconductor laser element electrically connected to the second wiring and the third wiring, at the upper surface side of the base; and a base cap fixed to the base such that the first semiconductor laser element and the second semiconductor laser element are enclosed in a space defined by the base and the base cap. The first semiconductor laser element and the second semiconductor laser element are connected in series. A portion of each of the first, second, and third wirings is exposed at the upper surface of the base at locations outside of the space defined by the base and the base cap. 1. A light emitting device comprising:a base comprising a first wiring, a second wiring, and a third wiring;a first semiconductor laser element electrically connected to the first wiring and the second wiring, at an upper surface side of the base;a second semiconductor laser element electrically connected to the second wiring and the third wiring, at the upper surface side of the base; anda base cap fixed to the base such that the first semiconductor laser element and the second semiconductor laser element are enclosed in a space defined by the base and the base cap;wherein the first semiconductor laser element and the second semiconductor laser element are connected in series; andwherein a portion of the first wiring, a portion of the second wiring, and a portion of the third wiring are exposed at the upper surface of the base at locations outside of the space defined by the base and the base cap.2. The light emitting device according to claim 1 , wherein:each of the first semiconductor laser element and the second semiconductor laser element comprises a nitride semiconductor, andthe space defined by the base and the base cap is ...

Подробнее
Номер записи: 63
05-06-2014 дата публикации

Optical Light Source

Номер: US20140153600A1
Автор: Liow Tsung-Yang, Lo Patrick Guo-Qiang, Luo Xianshu, SONG Junfeng, Yu Mingbin, Zhou Haifeng
Принадлежит: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

An optical light source is provided. The optical light source includes a waveguide including two reflectors arranged spaced apart from each other to define an optical cavity therebetween, an optical gain medium, and a coupling structure arranged to couple light between the optical cavity and the optical gain medium. 1. An optical light source comprising:a waveguide comprising two reflectors arranged spaced apart from each other to define an optical cavity therebetween;an optical gain medium; anda coupling structure arranged to couple light between the optical cavity and the optical gain medium.2. The optical light source as claimed in claim 1 , wherein the coupling structure is arranged spaced apart from at least one of the optical cavity or the optical gain medium.3. The optical light source as claimed in claim 1 , wherein the waveguide comprises a material capable of inducing a propagation loss of less than 2 dB/cm.4. The optical light source as claimed in claim 1 , wherein the waveguide comprises at least one of a silicon nitride-based material or silicon oxynitride-based material.5. The optical light source as claimed in claim 1 , wherein the coupling structure is embedded in the waveguide.6. The optical light source as claimed in claim 1 , wherein the coupling structure has a refractive index in between respective refractive indices of the waveguide and the optical gain medium.7. The optical light source as claimed in claim 1 , wherein the coupling structure has a thickness between about 50 nm and about 500 nm.8. The optical light source as claimed in claim 1 , wherein the coupling structure comprises amorphous silicon or poly-crystalline silicon.9. The optical light source as claimed in claim 1 , wherein the optical gain medium comprises a multiple quantum well region.10. The optical light source as claimed in claim 1 , wherein the optical gain medium comprises a cladding layer.11. The optical light source as claimed in claim 10 , wherein the cladding layer ...

Подробнее
Номер записи: 64
16-03-2017 дата публикации

METHOD FOR PRODUCING GROUP-III NITRIDE CRYSTAL, GROUP-III NITRIDE CRYSTAL, SEMICONDUCTOR DEVICE, AND DEVICE FOR PRODUCING GROUP-III NITRIDE CRYSTAL

Номер: US20170073839A1
Автор: IMADE Mamoru, ISEMURA Masashi, Mori Yusuke, SHIBATA Masatomo, USUI Akira, Yoshida Takehiro, Yoshimura Masashi
Принадлежит:

A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal on the first crystal by vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals to produce a first crystal 1. A method for producing a Group III nitride crystal , comprising:a first Group III nitride crystal production process of producing a first Group III nitride crystal by liquid phase epitaxy; and a seed crystal selection step of selecting a plurality of parts of a preliminarily provided Group III nitride as seed crystals for generation and growth of Group III nitride crystals;', 'a contact step of bringing the surfaces of the seed crystals into contact with an alkali metal melt; and', 'a Group III nitride crystal liquid phase growth step of causing a Group III element and nitrogen to react with each other in a nitrogen-containing atmosphere in the alkali metal melt to generate and grow Group III nitride crystals, wherein, 'a second Group III nitride crystal production process of producing a second Group III nitride crystal on the first Group III nitride crystal by vapor phase epitaxy, the first Group III nitride crystal production process comprisingin the Group III nitride crystal liquid phase growth step, the Group III nitride ...

Подробнее
Номер записи: 65
16-03-2017 дата публикации

PROCESS FOR PRODUCING GROUP III NITRIDE CRYSTAL AND APPARATUS FOR PRODUCING GROUP III NITRIDE CRYSTAL

Номер: US20170073840A1
Автор: IMADE Mamoru, ISEMURA Masashi, Mori Yusuke, Okayama Yoshio, Yoshimura Masashi
Принадлежит:

A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal on the first crystal by vapor phase epitaxy by causing a Group III element metal to react with an oxidizing agent and nitrogen-containing gas. In the first Group III nitride crystal production process, the surfaces of seed crystals (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals to produce a first crystal 1. A method for producing a Group III nitride crystal , comprising:a first Group III nitride crystal production process of producing a first Group III nitride crystal by liquid phase epitaxy; and a seed crystal selection step of selecting a plurality of parts of a preliminarily provided Group III nitride as seed crystals for generation and growth of Group III nitride crystals;', 'a contact step of bringing the surfaces of the seed crystals into contact with an alkali metal melt; and', 'a Group III nitride crystal liquid phase growth step of causing a Group III element and nitrogen to react with each other in a nitrogen-containing atmosphere in the alkali metal melt to generate and grow Group III nitride crystals, wherein, 'a second Group III nitride crystal production process of producing a second Group III nitride crystal on the first Group III nitride crystal by vapor phase epitaxy, the first Group III nitride crystal production ...

Подробнее
Номер записи: 66
16-03-2017 дата публикации

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE WITH III-V OPTICAL INTERCONNECT HAVING III-V EPITAXIAL SEMICONDUCTOR MATERIAL FORMED USING LATERAL OVERGROWTH

Номер: US20170075062A1
Автор: Cheng Cheng-Wei, LI NING, Sadana Devendra K., Shiu Kuen-Ting
Принадлежит:

An electrical device that includes a first semiconductor device positioned on a first portion of a substrate and a second semiconductor device positioned on a third portion of the substrate, wherein the first and third portions of the substrate are separated by a second portion of the substrate. An interlevel dielectric layer is present on the first, second and third portions of the substrate. The interlevel dielectric layer is present over the first and second semiconductor devices. An optical interconnect is positioned over the second portion of the semiconductor substrate. At least one material layer of the optical interconnect includes an epitaxial material that is in direct contact with a seed surface within the second portion of the substrate through a via extending through the least one interlevel dielectric layer. 1. An electrical device comprising:an optical interconnect positioned on a portion of the semiconductor substrate that is positioned between portions of a semiconductor substrate including electrical components, the optical interconnect is present on at least one interlevel dielectric layer that is present over at least one of the electrical components, the optical interconnect including a III-V light emission device and a III-V light detection device, wherein at least one material layer of the optical interconnect is an epitaxial material that is in direct contact with a semiconductor material layer of the substrate that is overlying a dielectric layer.2. The electrical device of claim 1 , wherein the semiconductor substrate is an SOI substrate.3. The electronic device of further comprising a dielectric waveguide positioned between the III-V light emission device and the III-V light detection device.4. The electronic device of claim 1 , wherein the electronic components comprises a switching device selected from the group consisting of field effect transistor (FET) claim 1 , fin field effect transistor (FinFET) claim 1 , metal oxide semiconductor ...

Подробнее
Номер записи: 67
16-03-2017 дата публикации

METHOD FOR PRODUCING SEMICONDUCTOR LASER ELEMENT

Номер: US20170077672A1
Автор: KOIZUMI Hiroki, SAKATA Hiroki
Принадлежит: NICHIA CORPORATION

A method for producing a semiconductor laser element includes providing a semiconductor wafer comprising: a nitride semiconductor substrate, and a semiconductor stack located on the substrate, the semiconductor stack including a plurality of nitride semiconductor layers; forming in the substrate a fissure starting point and a fissure extending from the fissure starting point; forming a cleavage reference portion extending parallel to a cleavage plane of the semiconductor wafer as estimated from a plan view shape of the fissure; and cleaving the semiconductor wafer parallel to the cleavage reference portion to thereby obtain resonator end faces. 1. A method for producing a semiconductor laser element , the method comprising: a nitride semiconductor substrate, and', 'a semiconductor stack located on the substrate, the semiconductor stack including a plurality of nitride semiconductor layers;, 'providing a semiconductor wafer comprisingforming in the substrate a fissure starting point and a fissure extending from the fissure starting point;forming a cleavage reference portion extending parallel to a cleavage plane of the semiconductor wafer as estimated from a plan view shape of the fissure; andcleaving the semiconductor wafer parallel to the cleavage reference portion to thereby obtain resonator end faces.2. The method for producing a semiconductor laser element according to claim 1 , wherein the cleavage reference portion is formed by splitting the semiconductor wafer.3. The method for producing a semiconductor laser element according to claim 1 , wherein the fissure starting point and the fissure are formed in the area in a vicinity of an outer edge of the semiconductor wafer.4. The method for producing a semiconductor laser element according to claim 3 , wherein the cleavage reference portion is formed by splitting the semiconductor wafer so as to separate an area in which the fissure starting point and the fissure have been formed from a remainder of the ...

Подробнее
Номер записи: 68
05-03-2020 дата публикации

TUNABLE LASER WITH DIRECTIONAL COUPLER

Номер: US20200076153A1
Автор: Chaouch Hacene, Li Guoliang
Принадлежит:

A tunable laser has a first mirror, a second mirror, a gain medium, and a directional coupler. The first mirror and the second mirror form an optical resonator. The gain medium and the directional coupler are, at least partially, in an optical path of the optical resonator. The first mirror and the second mirror comprise binary super gratings. Both the first mirror and the second mirror have high reflectivity. The directional coupler provides an output coupler for the tunable laser. 1. (canceled)2. A device for a laser comprising:a first mirror having a first plurality of reflectance peaks;a second mirror having a second plurality of reflectance peaks, wherein the first mirror and the second mirror are configured to form a resonator;a gain medium within the resonator; anda coupler between the first mirror and the second mirror, the coupler configured to guide a selected percentage of light directly, not evanescently, out of the resonator through a port of the coupler, such that the selected percentage of light coupled out of the resonator is independent of spectral properties of the first mirror and the second mirror, and wherein the coupler is a waveguide coupler.3. The device of claim 2 , wherein:wherein a maximum reflectance of the first plurality of reflectance peaks is greater than 90%; andwherein a maximum reflectance of the second plurality of reflectance peaks is greater than 90%.4. The device of claim 2 , wherein:the coupler comprises a ridge portion having a width at a waist of the coupler, wherein the waist is at a center of the coupler; andthe selected percentage of light guided out of the resonator through the port of the coupler is based on the width of the ridge portion at the waist of the coupler.5. The device of claim 2 , wherein:the coupler comprises a first ridge and a second ridge;a gap separates the first ridge from the second ridge; andthe gap is equal to or greater than 0.75 microns.6. The device of claim 2 , wherein the first mirror claim 2 , ...

Подробнее
Номер записи: 69
31-03-2022 дата публикации

HUMAN PLACENTAL COLLAGEN COMPOSITIONS AND METHODS OF MAKING AND USING THE SAME

Номер: US20220096352A1
Автор: Bhatia Mohit B., Edinger James W., Lugo Chris, Ye Qian
Принадлежит: Celularity Inc.

The present invention provides compositions comprising human placental telopeptide collagen, methods of preparing the compositions, methods of their use and kits comprising the compositions. The compositions, kits and methods are useful, for example, for augmenting or replacing tissue of a mammal. 1. Base-treated , detergent-treated telopeptide collagen.2. The collagen of that is mammalian collagen.3. The collagen of that is bovine claim 1 , ovine or rat collagen.4. The collagen of that is human collagen.5. The collagen of that is placental collagen.6. The collagen of that is human placental collagen.7. The collagen of that is cross-linked.8. The collagen of that is cross-linked with glutaraldehyde.9. Detergent-treated telopeptide collagen comprising a detectable amount of fibronectin.10. The composition of or comprising a plurality of stem cells.11. The composition of wherein the stem cells are embryonic stem cells claim 10 , embryonic germ cells claim 10 , mesenchymal stem cells claim 10 , bone marrow-derived stem cells claim 10 , hematopoietic stem cells from peripheral blood claim 10 , hematopoietic stem cells from fetal blood claim 10 , hematopoietic stem cells from placental blood claim 10 , hematopoietic stem cells from umbilical cord blood claim 10 , hematopoietic stem cells from placental perfusate claim 10 , somatic stem cells claim 10 , neural stem cells claim 10 , hepatic stem cells claim 10 , pancreatic stem cells claim 10 , endothelial stem cells claim 10 , cardiac stem cells claim 10 , muscle stem cells claim 10 , adipose stem cells claim 10 , or CD34 placental stem cells.12. The composition of wherein said CD34 placental stem cells are CD200.13. The composition of wherein said CD34 placental stem cells are:{'sup': +', '+, 'a. CD200 or HLA-G;'}{'sup': +', '+', '+, 'b. CD73, CD105, and CD200;'}{'sup': +', '+, 'c. CD200 and OCT-4;'}{'sup': +', '+', '+', '+', '+, 'd. CD73, CD105 and HLA-G, CD73 and CD105, and, when in a population of placental cells, ...

Подробнее
Номер записи: 70
12-06-2014 дата публикации

Semiconductor laser element

Номер: US20140161145A1
Автор: Takashi Miyoshi
Принадлежит: Nichia Corp

A semiconductor laser element includes: a light emitting layer of a nitride semiconductor that is placed above a substrate of GaN and has a refractive index higher than the substrate, wherein the semiconductor laser element further includes the following layers between the substrate and the light emitting layer in an order from the substrate: a first nitride semiconductor layer of AlGaN; a second nitride semiconductor layer of AlGaN having an Al ratio higher than the first nitride semiconductor layer; a third nitride semiconductor layer of an InGaN; and a fourth nitride semiconductor layer of AlGaN having an Al ratio higher than the first nitride semiconductor layer and having a thickness greater than the second nitride semiconductor layer.

Подробнее
Номер записи: 71
22-03-2018 дата публикации

METHODS OF PROVIDING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES THEREOF

Номер: US20180083064A1
Автор: Fan Fan, Liu Zhicheng, Ning Cun-Zheng, Turkdogan Sunay
Принадлежит: Arizona Board of Regents, Acting for and on Behalf of Arizona State University

Some embodiments include a method. The method can include: providing a carrier substrate; forming a first device material over the carrier substrate; and after forming the first device material over the carrier substrate, transforming the first device material into a second device material. Meanwhile, the transforming the first device material into the second device material can include: causing a cationic exchange in the first device material; and causing an anionic exchange in the first device material. The causing the cationic exchange in the first device material and the causing the anionic exchange in the first device material can occur approximately simultaneously. Other embodiments of related methods and systems are also disclosed. 1) A method comprising:providing a carrier substrate;forming a first device material over the carrier substrate; andafter forming the first device material over the carrier substrate, transforming the first device material into a second device material; [ causing a cationic exchange in the first device material; and', 'causing an anionic exchange in the first device material;, 'transforming the first device material into the second device material comprises, 'and', 'causing the cationic exchange in the first device material and causing the anionic exchange in the first device material occur approximately simultaneously., 'wherein2) The method of further comprising:exposing the carrier substrate to a first temperature; exposing the carrier substrate to the first temperature and forming the first device material over the carrier substrate occur approximately simultaneously;', 'exposing the carrier substrate to a second temperature;', 'transforming the first device material into the second device material further comprises, 'and', causing the cationic exchange in the first device material; and', 'causing the anionic exchange in the first device material., 'exposing the carrier substrate to the second temperature comprises], 'wherein3) ...

Подробнее
Номер записи: 72
22-03-2018 дата публикации

THERMALLY COMPENSATING SPOT-SIZE CONVERTER FOR AN ATHERMAL LASER

Номер: US20180083420A1
Автор: Bovington Jock T., Djordjevic Stevan S., Krishnamoorthy Ashok V., Zheng Xuezhe
Принадлежит: ORACLE INTERNATIONAL CORPORATION

A laser includes a reflective gain medium (RGM) comprising an optical gain material coupled with an associated reflector. The RGM is coupled to a spot-size converter (SSC), which optically couples the RGM to an optical reflector through a silicon waveguide. The SSC converts an optical mode-field size of the RGM to an optical mode-field size of the silicon waveguide. A negative thermo-optic coefficient (NTOC) waveguide is fabricated on top of the SSC. In this way, an optical signal, which originates from the RGM, passes into the SSC, is coupled into the NTOC waveguide, passes through the NTOC waveguide, and is coupled back into the SSC before passing into the silicon waveguide. During operation, the RGM, the spot-size converter, the NTOC waveguide, the silicon waveguide and the silicon mirror collectively form a lasing cavity for the athermal laser. Finally, a laser output is optically coupled to the lasing cavity. 1. An athermal laser , comprising:a reflective gain medium (RGM) comprising an optical gain material coupled with an associated reflector;a silicon waveguide;a silicon mirror, which is optically coupled to the silicon waveguide;a spot-size converter (SSC), which optically couples the RGM to the silicon waveguide, wherein the SSC converts an optical mode-field size of the RGM to an optical mode-field size of the silicon waveguide;a negative thermo-optic coefficient (NTOC) waveguide comprised of an NTOC material fabricated on top of the SSC, whereby an optical signal, which originates from the RGM, passes into the SSC, is coupled into the NTOC waveguide, passes through the NTOC waveguide, and is coupled back into the SSC before passing into the silicon waveguide;wherein the RGM, the spot-size converter, the NTOC waveguide, the silicon waveguide and the silicon mirror collectively form a lasing cavity for the athermal laser; anda laser output, which is optically coupled out of the lasing cavity.2. The athermal laser of claim 1 , wherein the lasing cavity ...

Подробнее
Номер записи: 73
23-03-2017 дата публикации

TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES

Номер: US20170084778A1
Автор: Henley Francois J., Kang Sien, Lamm Albert
Принадлежит:

Embodiments relate to use of a particle accelerator beam to form thin films of material from a bulk substrate are described. In particular embodiments, a bulk substrate having a top surface is exposed to a beam of accelerated particles. In certain embodiments, this bulk substrate may comprise GaN; in other embodiments this bulk substrate may comprise (111) single crystal silicon. Then, a thin film or wafer of material is separated from the bulk substrate by performing a controlled cleaving process along a cleave region formed by particles implanted from the beam. In certain embodiments this separated material is incorporated directly into an optoelectronic device, for example a GaN film cleaved from GaN bulk material. In some embodiments, this separated material may be employed as a template for further growth of semiconductor materials (e.g. GaN) that are useful for optoelectronic devices. 1. A workpiece for formation of an optoelectronic device , the workpiece comprising:a layer of crystalline material having a lattice constant compatible with formation of an overlying film of semiconductor material; anda substrate releasably bonded to a first surface of the layer of crystalline material opposite to a second surface of the layer of crystalline material, the second surface being coarse from cleaving and whereupon the overlying film of semiconductor material is to be formed,wherein the substrate has a coefficient of thermal expansion approximately equal to a coefficient of thermal expansion of the layer of crystalline material.2. The workpiece as in wherein the layer of crystalline material exhibits a level of stress lower than a threshold value sufficient to nucleate and propagate defects within the layer of crystalline material.3. The workpiece as in wherein mismatch between the substrate and the layer of crystalline material develops the level of stress insufficient to generate more than about 1×10defects/cm.4. The workpiece as in wherein mismatch between the ...

Подробнее
Номер записи: 74
31-03-2022 дата публикации

SEMICONDUCTOR DEVICE AND FABRICATION METHOD

Номер: US20220102935A1
Автор: Chen Siming, HUO Suguo, LIAO Mengya, LIU Huiyun, SEEDS Alwyn, TANG Mingchu, Wu Jiang
Принадлежит:

Disclosed herein is a semiconductor device comprising: a silicon substrate; a germanium layer; and a buffer layer comprised of at least one layer of III-V compound, formed directly on silicon; at least one layer containing III-V compound quantum dots wherein one or more facets are formed using focused ion beam etching such that the angle between the plane of the facet is normal to the plane of growth. 1. A semiconductor device comprising:a silicon substrate;a germanium layer;a buffer layer comprised of at least one layer of III-V compound, formed directly on silicon; andat least one layer containing III-V compound quantum dots,wherein one or more facets are formed using focused ion beam etching such that an angle between a plane of the facet is normal to a plane of growth.2. A semiconductor device comprising:a silicon substrate;a buffer layer comprised of at least one layer of III-V compound, formed directly on silicon;one or more InGaAs/GaAs strained layer superlattices; andat least one layer containing III-V compound quantum dots,wherein one or more facets are formed using focused ion beam etching such that an angle between a plane of the facet is normal to a plane of growth.3. The device of claim 1 , wherein ions of the focused ion beam include positive ions of He claim 1 , Ne claim 1 , and Ga.4. The device of claim 1 , wherein probe current is less or equal to 500 pA.5. The device of claim 1 , wherein step size is less or equal to 100 nm.6. The device of claim 1 , wherein dwell time is less or equal to 1 ms.7. The device of claim 1 , wherein the angle between the plane of the facet and the normal in the growth plane to an axis of a waveguide forming part of the device claim 1 , which is a facet angle claim 1 , is chosen to create cavity mirrors with different angles so that a facet reflectivity can be controlled in a reproducible and high yield way to create diverse semiconductor devices on silicon.8. The device of claim 7 , wherein the facet angle is a value ...

Подробнее
Номер записи: 75
29-03-2018 дата публикации

LASER DEVICE INTEGRATED WITH SEMICONDUCTOR OPTICAL AMPLIFIER ON SILICON SUBSTRATE

Номер: US20180090576A1
Автор: Kim Taek
Принадлежит:

A laser device includes a silicon substrate, a buffer layer on the silicon substrate, a laser cavity on the buffer layer including a first active region based on group III-V semiconductor quantum dots, and a semiconductor optical amplifier that is integrated with the laser cavity on the buffer layer, includes a second active region based on group III-V semiconductor quantum dots, and amplifies light emitted from the laser cavity. 1. A laser device comprising:a silicon substrate;a buffer layer on the silicon substrate;a laser cavity on the buffer layer, the laser cavity including a first active region including group III-V semiconductor quantum dots, and a front mirror region and a rear mirror region at both sides of the first active region, the front mirror region and the rear mirror region being spaced apart from each other in a direction parallel to the buffer layer; anda semiconductor optical amplifier integrated with the laser cavity on the buffer layer and having a second active region including group III-V semiconductor quantum dots, and configured to amplify light emitted from the laser cavity.2. The laser device of claim 1 , wherein the light generated by the first active region has a wavelength band that is not absorbed by the silicon substrate.3. The laser device of claim 2 , wherein the light generated by the first active region has a wavelength band equal to or greater than about 1100 nm.4. The laser device of claim 1 , wherein the buffer layer comprises a group III-V semiconductor material.5. The laser device of claim 4 , wherein the buffer layer comprises GaAs claim 4 , InGaAs claim 4 , InGaP claim 4 , or GaP.6. The laser device of claim 1 , further comprising a layer including Ge or SiGe between the silicon substrate and the buffer layer.7. The laser device of claim 1 , wherein the laser cavity comprises:a lower clad layer on the buffer layer;the first active region on the lower clad layer;an upper clad layer on the first active region; andthe front ...

Подробнее
Номер записи: 76
29-03-2018 дата публикации

LIGHT EMITTING ELEMENT

Номер: US20180090643A1
Автор: ABE Makoto
Принадлежит: NICHIA CORPORATION

A light emitting element includes: an n-side semiconductor layer; a p-side semiconductor layer; an active layer comprising a plurality of well layers and a plurality of barrier layers, and being located between the n-side semiconductor layer and the p-side semiconductor layer. The plurality of barrier layers comprises a final barrier layer, which is a layer of the active layer that is closest to the p-side semiconductor layer. The p-side semiconductor layer comprises, from an active layer-side, a first p-side semiconductor layer, which is a layer of the p-side semiconductor layer that is closest to the active layer, and a second p-side semiconductor layer containing a p-type dopant and having a bandgap greater than a bandgap of the final barrier layer. The first p-side semiconductor layer has a bandgap smaller than the bandgap of the final barrier layer and greater than a bandgap of any of the well layers, and has a thickness smaller than a thickness of the final barrier layer. 1. A light emitting element comprising:an n-side semiconductor layer;a p-side semiconductor layer;an active layer comprising a plurality of well layers and a plurality of barrier layers, and being located between the n-side semiconductor layer and the p-side semiconductor layer;wherein the plurality of barrier layers comprises a final barrier layer, which is a layer of the active layer that is closest to the p-side semiconductor layer;wherein the p-side semiconductor layer comprises, from an active layer-side, a first p-side semiconductor layer, which is a layer of the p-side semiconductor layer that is closest to the active layer, and a second p-side semiconductor layer containing a p-type dopant and having a bandgap greater than a bandgap of the final barrier layer; andwherein the first p-side semiconductor layer has a bandgap smaller than the bandgap of the final barrier layer and greater than a bandgap of any of the well layers, and has a thickness smaller than a thickness of the final ...

Подробнее
Номер записи: 77
21-03-2019 дата публикации

HUMAN PLACENTAL COLLAGEN COMPOSITIONS AND METHODS OF MAKING AND USING THE SAME

Номер: US20190089124A1
Автор: Bhatia Mohit B., Edinger James W., Lugo Chris, Ye Qian
Принадлежит: CELULARITY, INC.

The present invention provides compositions comprising human placental telopeptide collagen, methods of preparing the compositions, methods of their use and kits comprising the compositions. The compositions, kits and methods are useful, for example, for augmenting or replacing tissue of a mammal. 121-. (canceled)22. A process for preparing an extracellular matrix composition comprising collagen and elastin from mammalian placental tissue , said process comprising the steps of:(a) contacting the mammalian placental tissue with a high osmotic potential solution; and(b) contacting the mammalian placental tissue with a low osmotic potential solution.23. The process of wherein the low osmotic potential solution comprises water with an osmotic potential less than that of 50 mM NaCl.24. The process of wherein the high osmotic potential solution has an osmotic potential of a solution of at least 0.5 M NaCl.2548-. (canceled)49. The process of claim 23 , wherein the low osmotic potential solution is water.50. The process of claim 24 , wherein the high osmotic potential solution comprises at least 1.0M NaCl.51. The process of claim 50 , wherein the high osmotic potential solution comprises at least 2M NaCl.52. The process of claim 22 , wherein the placental tissue comprises human placental tissue.53. The process of claim 22 , wherein the placental tissue comprises a placental amniotic membrane that has been separated from a placental chorionic membrane.54. The process of claim 22 , wherein the placental tissue comprises a placental chorionic membrane that has been separated from a placental amniotic membrane.55. The process of claim 22 , wherein the placental tissue comprises a whole placenta.56. The process of claim 52 , wherein the placental tissue is prepared from a placenta that has been exsanguinated.57. The process of claim 22 , wherein the process further comprises drying the collagen composition.58. The process of claim 57 , wherein the drying comprises vacuum drying ...

Подробнее
Номер записи: 78
09-04-2015 дата публикации

PROCESSING OF A DIRECT-BANDGAP CHIP AFTER BONDING TO A SILICON PHOTONIC DEVICE

Номер: US20150099318A1
Автор: Creazzo Timothy, Dallesasse John, Krasulick Stephen B., Marchena Elton, Mizrahi Amit, Spann John Y.
Принадлежит: SKORPIOS TECHNOLOGIES, INC.

A method for fabricating a photonic composite device for splitting functionality across materials comprises providing a composite device having a platform and a chip bonded in the platform. The chip is processed comprising patterning, etching, deposition, and/or other processing steps while the chip is bonded to the platform. The chip is used as a gain medium and the platform is at least partially made of silicon. 1. A method for fabricating a composite device for splitting functionality across two or more materials , the method comprising: [ the platform comprises a recess; and', 'the platform comprises a first material; and, 'a platform, wherein, the chip is bonded in the recess of the platform; and', 'the chip comprises a second material; and, 'a chip, wherein], 'providing a composite device, the composite device comprisingmasking the composite device to define an area on the chip to etch; andetching the chip after the chip is bonded to the platform.2. The method for fabricating the composite device as recited in claim 1 , wherein the first material is silicon.3. The method for fabricating the composite device as recited in claim 1 , wherein the second material is a III-V material.4. The method for fabricating the composite device as recited in claim 1 , wherein etching the chip forms a waveguide on the chip.5. The method for fabricating the composite device as recited in claim 4 , wherein the waveguide on the chip is aligned with a waveguide in the platform by using photolithography processes to form the waveguide on the chip after the chip is bonded to the platform.6. The method for fabricating the composite device as recited in claim 1 , the method further comprising covering the chip to hermetically seal the chip in the recess.7. The method for fabricating the composite device as recited in claim 1 , wherein etching the chip is performed in a processing chamber used to make CMOS devices.8. The method for fabricating the composite device as recited in claim 1 ...

Подробнее
Номер записи: 79
03-07-2014 дата публикации

GROUP III-V SUBSTRATE MATERIAL WITH THIN BUFFER LAYER AND METHODS OF MAKING

Номер: US20140185639A1
Автор: Beaumont Bernard, Faurie Jean-Pierre
Принадлежит: SAINT-GOBAIN CRISTAUX ET DETECTEURS

A substrate comprises a Group III-V material having an upper surface and a buffer layer having a thickness of not greater than about 1.3 μm and overlying the upper surface of the substrate. A plurality of optoelectronic devices formed on the substrate having a normalized light emission wavelength standard deviation of not greater than about 0.0641 nm/cmat a wavelength within a range of between about 400 nm to about 550 nm. 1. A substrate comprising:a body comprising a Group III-V material and having an upper surface; and 'wherein the buffer layer has an average thickness within a range of between at least about 0.01 μm to not greater than about 1.3 μm.', 'a buffer layer comprising a Group III-V material adjacent the upper surface of the body,'}2. The substrate of claim 1 , wherein the buffer layer has an average thickness within a range of between at least about 0.1 μm to no greater than about 0.8 μm.3. The substrate of claim 1 , wherein the body comprises gallium nitride.4. The substrate of claim 1 , wherein the buffer layer comprises gallium nitride.5. The substrate of claim 1 , wherein the buffer layer consists essentially of gallium nitride.6. The substrate of claim 1 , wherein the substrate is configured to provide a surface for the formation of a plurality of optoelectronic devices overlying the buffer layer and having a normalized light emission wavelength standard deviation (nσ) of no greater than about 0.0641 nm/cmat a wavelength within a range of between about 400 nm to about 550 nm.7. A substrate structure comprising:a substrate comprising a Group III-V material having an upper surface; and{'sup': '2', 'a plurality of optoelectronic devices overlying the upper surface of the substrate, wherein the plurality of optoelectronic devices overlying the upper surface of the substrate have a normalized light emission wavelength standard deviation (nσ) of not greater than about 0.0641 nm/cmat a wavelength within a range of between about 400 nm to about 550 nm.'}8. ...

Подробнее
Номер записи: 80
19-04-2018 дата публикации

SURFACE-NORMAL OPTICAL COUPLING INTERFACE WITH THERMAL-OPTIC COEFFICIENT COMPENSATION

Номер: US20180106964A1
Автор: Krishnamoorthy Ashok V., Luo Ying, Zheng Xuezhe
Принадлежит: ORACLE INTERNATIONAL CORPORATION

The disclosed embodiments provide a system that implements an optical interface. The system includes a semiconductor chip with a silicon layer, which includes a silicon waveguide, and an interface layer (which can be comprised of SiON) disposed over the silicon layer, wherein the interface layer includes an interface waveguide. The system also includes an optical coupler that couples an optical signal from the silicon waveguide in the silicon layer to the interface waveguide in the interface layer, wherein the interface waveguide channels the optical signal in a direction parallel to a top surface of the semiconductor chip. The system additionally includes a mirror, which is oriented to reflect the optical signal from the interface waveguide in a surface-normal direction so that the optical signal exits the top surface of the semiconductor chip. 1. An interface , comprising:a semiconductor chip with a silicon layer, which includes a silicon waveguide, and an interface layer comprised of an interface material disposed over the silicon layer, wherein the interface layer includes an interface waveguide;an optical coupler that couples an optical signal from the silicon waveguide in the silicon layer to the interface waveguide in the interface layer, wherein the interface waveguide channels the optical signal in a direction parallel to a top surface of the semiconductor chip; anda mirror, which is oriented to reflect the optical signal from the interface waveguide in a surface-normal direction so that the optical signal exits a surface normal coupler on the top surface of the semiconductor chip, wherein the mirror comprises a reflectively coated etched surface of a sacrificial silicon layer, wherein the sacrificial silicon layer is disposed over the silicon layer at a same level as the interface layer.2. The interface of claim 1 , further comprising an optical gain chip bonded to the top surface of the semiconductor chip claim 1 , wherein the optical gain chip is ...

Подробнее
Номер записи: 81
21-04-2016 дата публикации

TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES

Номер: US20160111500A1
Автор: Henley Francois J., Kang Sien, Lamm Albert
Принадлежит:

Embodiments relate to use of a particle accelerator beam to form thin films of material from a bulk substrate are described. In particular embodiments, a bulk substrate having a top surface is exposed to a beam of accelerated particles. In certain embodiments, this bulk substrate may comprise GaN; in other embodiments this bulk substrate may comprise (111) single crystal silicon. Then, a thin film or wafer of material is separated from the bulk substrate by performing a controlled cleaving process along a cleave region formed by particles implanted from the beam. In certain embodiments this separated material is incorporated directly into an optoelectronic device, for example a GaN film cleaved from GaN bulk material. In some embodiments, this separated material may be employed as a template for further growth of semiconductor materials (e.g. GaN) that are useful for optoelectronic devices. 117.-. (canceled)18. A workpiece for formation of an optoelectronic device , the workpiece comprising:a layer of crystalline material having a lattice constant compatible with formation of an overlying film of semiconductor material; anda substrate bonded to a first surface of the layer of crystalline material opposite to a second surface of the layer of material upon which the overlying film of semiconductor material is to be formed, the substrate having a coefficient of thermal expansion approximately equal to a coefficient of thermal expansion of the layer of crystalline material.19. The workpiece as in wherein the layer of crystalline material exhibits a level of stress lower than a threshold value sufficient to nucleate and propagate defects within the crystalline material.20. The workpiece as in wherein mismatch between the substrate and the layer of crystalline material develops the level of stress insufficient to generate more than about 1×10defects/cm.21. The workpiece as in wherein mismatch between the substrate and the layer of crystalline material develops the level ...

Подробнее
Номер записи: 82
21-04-2016 дата публикации

HYBRID LASER INCLUDING ANTI-RESONANT WAVEGUIDES

Номер: US20160111858A1
Автор: Park Hyundai
Принадлежит:

Described are embodiments of apparatuses and systems including a hybrid laser including anti-resonant waveguides, and methods for making such apparatuses and systems. A hybrid laser apparatus may include a first semiconductor region including an active region of one or more layers of semiconductor materials from group III, group IV, or group V semiconductor, and a second semiconductor region coupled with the first semiconductor region and having an optical waveguide, a first trench disposed on a first side of the optical waveguide, and a second trench disposed on a second side, opposite the first side, of the optical waveguide. Other embodiments may be described and/or claimed. 1. (canceled)2. A hybrid laser apparatus comprising:a first semiconductor region including an active region of one or more layers of semiconductor materials from group III, group IV, or group V semiconductor; and an optical waveguide;', 'a first trench disposed on a first side of the optical waveguide;', 'a second trench disposed on a second side, opposite the first side, of the optical waveguide;', 'a third trench disposed on the first side of the optical waveguide such that the first trench is between the third trench and the optical waveguide; and', 'a fourth trench disposed on the second side of the optical waveguide such that the second trench is between the fourth trench and the optical waveguide,, 'a second semiconductor region coupled with the first semiconductor region, wherein the second semiconductor region includes at least a buried insulating layer and a silicon layer disposed on the buried insulating layer, and further includeswherein the first, second, third and fourth trenches are disposed inside the silicon layer to have a portion of the silicon layer between a respective trench and the buried insulating layer, and wherein the first and second trenches define the optical waveguide.3. The hybrid laser apparatus of claim 2 , wherein a layer of the first semiconductor region is ...

Подробнее
Номер записи: 83
29-04-2021 дата публикации

SEMICONDUCTOR OPTICAL AMPLIFIER WITH ASYMMETRIC MACH-ZEHNDER INTERFEROMETERS

Номер: US20210126731A1
Автор: Fish Gregory Alan, Garcia John M., Koch Brian Robert, Norberg Erik Johan
Принадлежит:

Described herein are photonic integrated circuits (PICs) comprising a semiconductor optical amplifier (SOA) to output a signal comprising a plurality of wavelengths, a sensor to detect data associated with a power value of each wavelength of the output signal of the SOA, a filter to filter power values of one or more of the wavelengths of the output signal of the SOA, and control circuitry to control the filter to reduce a difference between a pre-determined power value of each filtered wavelength of the output signal of the SOA and the detected power value of each filtered wavelength of the output signal of the SOA. 1. A photonic integrated circuit comprising:a semiconductor optical amplifier to amplify a beam that includes a plurality of wavelengths; anda Mach-Zehnder interferometer integrated in the photonic integrated circuit to receive an amplified beam from the semiconductor optical amplifier, the Mach-Zehnder interferometer configured to apply a tuned loss to a range of the plurality of wavelengths of the amplified beam to compensate for excess gain added to the range of the plurality of wavelengths by a temperature change of the photonic integrated circuit.2. The photonic integrated circuit of claim 1 , wherein the Mach-Zehnder interferometer has a free spectral range greater than or equal to a wavelength range subtended by the plurality of wavelengths in the beam.3. The photonic integrated circuit of claim 1 , further comprising a sensor configured to detect an optical power value of the plurality of wavelengths of the beam.4. The photonic integrated circuit of claim 3 , further comprising control circuitry configured to:receive the optical power value from the sensor;determine a difference between the detected optical power value and a reference optical power value; andcontrol operation of the Mach-Zehnder interferometer to reduce the difference between the detected optical power value and the reference optical power value.5. The photonic integrated ...

Подробнее
Номер записи: 84
28-04-2016 дата публикации

Optical reflector based on a directional coupler and a coupled optical loop

Номер: US20160116821A1
Автор: Ashok V. Krishnamoorthy, Guoliang Li, Xuezhe Zheng, Ying L. Luo
Принадлежит: Oracle International Corp

An optical device includes an optical reflector based on a coupled-loopback optical waveguide. In particular, an input port, an output port and an optical loop in arms of the optical reflector are optically coupled to a directional coupler. The directional coupler evanescently couples an optical signal between the arms. For example, the directional coupler may include: a multimode interference coupler and/or a Mach-Zehnder Interferometer (MZI). Moreover, destructive interference during the evanescent coupling determines the reflection and transmission power coefficients of the optical reflector.

Подробнее
Номер записи: 85
02-04-2020 дата публикации

LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME

Номер: US20200106243A1
Автор: FUTAGAWA NORIYUKI, HAMAGUCHI TATSUSHI, Kuramoto Masaru, Maeda Yuki
Принадлежит: SONY CORPORATION

A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer. 1. A method of manufacturing a light emitting element comprising , sequentially:(a) forming a first light reflecting layer having a convex shape formed from a multilayer film on a substrate for manufacturing a light emitting element;(b) forming a layered structure body by layering a first compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, an active layer formed from a GaN-based compound semiconductor, which contacts the second surface of the first compound semiconductor layer, and a second compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, and in which the first surface contacts the active layer on the substrate for manufacturing a light emitting element that includes the first light reflecting layer;(c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film;(d) fixing the second light ...

Подробнее
Номер записи: 86
28-04-2016 дата публикации

OPTICAL DEVICE AND METHOD OF FABRICATING AN OPTICAL DEVICE

Номер: US20160118774A1
Автор: HENNING HUWER Jan, Shields Andrew James, SKIBA-SZYMANSKA Joanna Krystyna, STEVENSON Richard Mark
Принадлежит:

An optical device comprising: 1. An optical device comprising:a substrate;a cavity structure on the substrate, comprising a quantum emitter in contact with one or more semiconductor layers; wherein the or all of the semiconductor layers in contact with the quantum emitter have a thickness larger than the height of the quantum emitter.2. The optical device according to claim 1 , wherein there are a plurality of quantum emitters.3. The optical device according to claim 1 , wherein the cavity structure is on a 001 orientated surface of the substrate.4. The optical device according to claim 1 , wherein the height of the quantum emitter is greater than 3 nm.5. The optical device according to claim 1 , wherein the longest dimension of the quantum emitter in the plane of the layers is greater than 3 nm.6. The optical device according to claim 1 , comprising a quantum emitter layer having a plurality of quantum emitters with a random distribution in the direction of dipole axis.7. The optical device according to claim 1 , comprising a quantum emitter layer having a plurality of quantum emitters with a random distribution in the fine structure splitting.8. The optical device according to claim 2 , wherein the fine structure splitting of at least one of the quantum emitters is less than 10 μeV.9. The optical device according to claim 2 , wherein the density of the quantum emitters is less than 10 emitters/μm.10. The optical device according to claim 1 , wherein said device comprises at least one compound comprising: Ga claim 1 , In claim 1 , or Al; in combination with As or P.11. The optical device of claim 1 , wherein there is no wetting layer in contact with the quantum emitter.12. The optical device of claim 1 , wherein the quantum emitter is optically excited and the optical device comprises a laser configured to optically excite the quantum emitter.13. The optical device of claim 1 , wherein the quantum emitter is electrically excited and the optical device further ...

Подробнее
Номер записи: 87
27-04-2017 дата публикации

PROCESS FOR QUANTUM RANDOM NUMBER GENERATION IN A MULTIMODE LASER CAVITY

Номер: US20170115960A1
Автор: ABELLAN Carlos, Amaya Waldimar, Mitchell Morgan Wilfred, PRUNERI Valerio
Принадлежит:

A process and system for producing random numbers by means of a quantum random number generator is disclosed, comprising the steps of operating a multimode laser in a laser cavity with periodic modulation of a net gain, and detecting the random intensity pattern produced by the inter-mode beating occurring within the laser cavity. The numbers produced are truly random and a minimal number of elements is required for operating the system. 1. A process for producing random numbers by means of a quantum random number generator , the process comprising:a) operating a multimode laser in a laser cavity with periodic modulation of a net gain from positive to negative values and vice-versa;b) maintaining the net gain per round trip positive over a period longer than a round trip time of the laser cavity;c) maintaining the net gain per round trip negative over a period longer than the round trip time of the laser cavity; andd) detecting a resulting random beating pattern between multiple modes of the multimode laser.2. A process according to where the net gain is modulated through an electrical pulse driver.3. A process according to where the resulting random beating pattern between the multiple modes is detected by a fast photodiode.4. A process according to further comprising selecting a number of frequencies within the laser cavity so as to reduce a number of modes involved in the beating pattern.5. A process according to in which the laser is operated at a non-resonant frequency claim 1 , such that a locking mechanism between longitudinal modes of the laser cavity is prevented.6. A process according to further comprising optically isolating signals in the laser cavity so as to avoid reflected optical power into the laser cavity.7. A process according to in which the modes of the multimode laser are longitudinal claim 1 , transversal or polarization modes in the laser cavity.8. A process according to in which the multimode laser is a semiconductor laser diode claim 1 , a ...

Подробнее
Номер записи: 88
18-04-2019 дата публикации

Lift-off method

Номер: US20190115494A1
Автор: Hiroki Takeuchi, Tasuku Koyanagi
Принадлежит: Disco Corp

A lift-off method transfers onto a transfer substrate an optical device layer of an optical device wafer in which the optical device layer is formed over a front surface of an epitaxy substrate through a GaN buffer layer. The lift-off method includes: bonding the transfer substrate onto a front surface of the optical device layer through a bonding layer to form a composite substrate; applying a pulsed laser beam of such a wavelength as to be transferred through the epitaxy substrate constituting the composite substrate but to be absorbed in the buffer layer from a back surface side of the epitaxy substrate, to break the buffer layer; and peeling the optical device layer from the epitaxy substrate and transferring the optical device layer onto the transfer substrate, after the buffer layer breaking step is performed.

Подробнее
Номер записи: 89
03-05-2018 дата публикации

TUNABLE LASER WITH DIRECTIONAL COUPLER

Номер: US20180123318A1
Автор: Chaouch Hacene, Li Guoliang
Принадлежит: SKORPIOS TECHNOLOGIES, INC.

A tunable laser has a first mirror, a second mirror, a gain medium, and a directional coupler. The first mirror and the second mirror form an optical resonator. The gain medium and the directional coupler are, at least partially, in an optical path of the optical resonator. The first mirror and the second mirror comprise binary super gratings. Both the first mirror and the second mirror have high reflectivity. The directional coupler provides an output coupler for the tunable laser. 1. (canceled)2. A method for coupling silicon waveguides , the method comprising: the directional coupler has a shoulder;', 'the directional coupler has a first ridge extending from the first input to a first output disposed on the shoulder; and', 'the directional coupler has a second ridge extending from a second input to a second output disposed on the shoulder;, 'guiding light into a first input of a directional coupler, whereinguiding light from the first input to the first ridge;guiding light from the first ridge, through the shoulder to the second ridge, wherein the first ridge tapers to direct at least a portion of light, from the first input, out of the first ridge toward the second ridge; andguiding light from the second ridge to the second output.3. The method as recited in claim 2 , wherein the first ridge claim 2 , the second ridge claim 2 , and the shoulder are made of silicon.4. The method as recited in claim 3 , wherein:the first ridge, the second ridge, and the shoulder are made of crystalline silicon; andthe shoulder is disposed on a silicon substrate.5. The method as recited in claim 2 , wherein:the shoulder tapers in a first region;the first ridge and the second ridge taper in a second region;the first ridge and the second ridge taper in an opposite direction in a third region than in the second region;the shoulder tapers in an opposite direction in a fourth region than in the first region;the second region is between the first region and the third region; andthe third ...

Подробнее
Номер записи: 90
12-05-2016 дата публикации

Ring Cavity Device and its Fabrication Method Thereof

Номер: US20160131926A1
Автор: Zhang Ruiying
Принадлежит:

A ring cavity device includes a passive ring waveguide and an input/output waveguide horizontally coupled to the passive ring waveguide, including an active waveguide structure vertically coupled to the passive ring waveguide and/or the input/output waveguide. The active waveguide structure compensates for the loss of the passive ring waveguide. A method for fabricating a ring cavity device is also included. The ring cavity device may obtain part of the gain by vertical coupling or mixed coupling (vertical coupling followed by horizontal coupling) thus to compensate the loss in the ring cavity device. Hence, the quality factor of the ring cavity device is improved. 1. A ring cavity device , comprising a passive ring waveguide and an input/output waveguide horizontally coupled to the passive ring waveguide , characterized in that the ring cavity device further comprises an active waveguide structure vertically coupled to the passive ring waveguide and/or the input/output waveguide , and the active waveguide structure provides a gain to the passive ring waveguide to compensate loss.2. (canceled)3. The ring cavity device according to claim 1 , characterized in that the active waveguide structure at least covers a part of an upper surface of the passive ring waveguide claim 1 , the active waveguide structure comprises a space layer claim 1 , an active gain layer claim 1 , a cladding layer and a contact layer successively formed on the upper surface of the passive ring waveguide.4. The ring cavity device according to claim 3 , characterized in that the space layer is made of InP; the active gain layer is made of In(Ga)As(P); the cladding layer is made of InP; and the contact layer is made of InGaAs.5. The ring cavity device according to claim 1 , characterized in that the active waveguide structure is formed in a first position of the input/output waveguide which is coupled to the passive ring waveguide in the first position.6. The ring cavity device according to claim 5 ...

Подробнее
Номер записи: 91
27-05-2021 дата публикации

EPITAXIAL GROWTH ON A GALLIUM ARSENIDE PHOSPHIDE CAPPED MATERIAL ON A GALLIUM ARSENIDE SUBSTRATE

Номер: US20210159669A1
Автор: Chang-Hasnain Constance J., Kapraun Jonas H., Kolev Emil, Wang Jiaxing
Принадлежит: The Regents of the University of California

A semiconductor device fabrication method in which a growing process is followed by a capping process in which a phosphor containing material cap layer is deposited over a final GaAs based layer. The wafer, containing many such substrates, can be removed from the reaction chamber to continue processing at a later time without creating an oxide layer on the final GaAs based layer. In continuing processing, a decomposition process selectively decomposes the phosphor containing material cap layer, after which a regrowing process is performed to grow additional layers of the device structure. The capping, decomposition and regrowth processes can be repeated multiple times on the semiconductor devices on the wafer during device fabrication. 1. A method of fabricating GaAs based semiconductor device structures , comprising:(a) performing a growing process in a reaction chamber by growing elements of a semiconductor device structure with a first type of doping over a semiconductor substrate having the first type of doping and ending with growing a final GaAs based layer of the device;(b) performing a capping process by depositing a phosphor containing material cap layer over the final GaAs based layer formed during the growing process, wherein said phosphor containing material cap layer protects elements of the semiconductor device structure from oxidizing when exposed to atmospheric conditions;(c) performing a decomposition process by selectively decomposing the phosphor containing material cap layer by using high temperature desorption; and(d) performing a regrowing process in which other layers of the GaAs based semiconductor device structure are grown.2. The method of claim 1 , further comprising forming a contact layer over the final GaAs based layer after the decomposition process and prior to fabricating additional layers of the semiconductor device structure.3. The method of claim 1 , wherein said semiconductor substrate is contained on a semiconductor wafer upon ...

Подробнее
Номер записи: 92
10-05-2018 дата публикации

Tunable Waveguide Devices

Номер: US20180131157A1
Автор: Corzine Scott, Evans Peter W., JR. Fred A., Kish, Lal Vikrant, Lu Mingzhi, Osenbach John W., Yan Jin
Принадлежит:

Methods, systems, and apparatus, including a laser including a layer having first and second regions, the first region including a void; a mirror section provided on the layer, the mirror section including a waveguide core, at least part of the waveguide core is provided over at least a portion of the void; a first grating provided on the waveguide core; a first cladding layer provided between the layer and the waveguide core and supported by the second region of the layer; a second cladding layer provided on the waveguide core; and a heat source configured to change a temperature of at least one of the waveguide core and the grating, where an optical mode propagating in the waveguide core of the mirror section does not incur substantial loss due to interaction with portions of the mirror section above and below the waveguide core. 1. A laser comprising:a layer having first and second regions, the first region including a void, the layer being provided over a substrate; a waveguide core, at least part of the waveguide core is provided over at least a portion of the void;', 'a grating having a plurality of grating groups provided along at least a portion of a length of the mirror;', 'a first cladding provided between the layer and the waveguide core, wherein at least a portion of the first cladding is provided over at least a portion of the second region of the layer;', 'a second cladding provided on the waveguide core; and', 'a heat source configured to change a temperature of at least one of the waveguide core or the grating; and, 'a mirror section provided on the layer, the mirror section comprisinga plurality of support legs being provided between the waveguide core and the substrate,wherein the mirror section has a substantially uniform thermal distribution along the mirror section, andwherein at least part of one of the plurality of support structures is misaligned relative to at least a portion of one of the plurality of grating groups.2. The laser of claim 1 ...

Подробнее
Номер записи: 93
10-05-2018 дата публикации

Tunable Waveguide Devices

Номер: US20180131158A1
Автор: Corzine Scott, Evans Peter W., JR. Fred A., Kish, Lal Vikrant, Lu Mingzhi, Osenbach John W., Yan Jin
Принадлежит:

Methods, systems, and apparatus, including a laser including a layer having first and second regions, the first region including a void; a mirror section provided on the layer, the mirror section including a waveguide core, at least part of the waveguide core is provided over at least a portion of the void; a first grating provided on the waveguide core; a first cladding layer provided between the layer and the waveguide core and supported by the second region of the layer; a second cladding layer provided on the waveguide core; and a heat source configured to change a temperature of at least one of the waveguide core and the grating, where an optical mode propagating in the waveguide core of the mirror section does not incur substantial loss due to interaction with portions of the mirror section above and below the waveguide core. 1. A semiconductor laser , comprising:a substrate;a layer formed on the substrate, the layer having first and second regions, the first region of the layer including one or more voids; a first waveguide core;', 'a p-type region and an n-type region that form a p-n junction; and', 'a contact layer configured to apply a voltage to forward bias the p-n junction of the gain section;, 'a gain section provided on the layer, the gain section comprising a second waveguide core, wherein at least part of the second waveguide core is provided over a first void;', 'a first grating; and', 'a first heat source configured to change a temperature of the second waveguide core or the first grating;, 'a first mirror section provided on the layer, the first mirror section comprising a third waveguide core; and', 'a second heat source configured to change a temperature of the third waveguide core;, 'a phase section provided on the layer, the phase section comprising a fourth waveguide core, wherein at least part of the fourth waveguide core is provided over a second void;', 'a second grating; and', 'a third heat source configured to change a temperature of ...

Подробнее
Номер записи: 94
10-05-2018 дата публикации

Tunable Waveguide Devices

Номер: US20180131159A1
Автор: Fred A. Kish, Jr., Jin Yan, John W. Osenbach, Mingzhi Lu, Peter W. Evans, Scott Corzine, Vikrant Lal
Принадлежит: Infinera Corp

Methods, systems, and apparatus, including a laser including a layer having first and second regions, the first region including a void; a mirror section provided on the layer, the mirror section including a waveguide core, at least part of the waveguide core is provided over at least a portion of the void; a first grating provided on the waveguide core; a first cladding layer provided between the layer and the waveguide core and supported by the second region of the layer; a second cladding layer provided on the waveguide core; and a heat source configured to change a temperature of at least one of the waveguide core and the grating, where an optical mode propagating in the waveguide core of the mirror section does not incur substantial loss due to interaction with portions of the mirror section above and below the waveguide core.

Подробнее
Номер записи: 95
01-09-2022 дата публикации

SEMICONDUCTOR OPTICAL DEVICE AND METHOD OF MANUFACTURING SAME

Номер: US20220278503A1
Автор: Fujiwara Naoki, KIKUCHI Takehiko, Nishiyama Nobuhiko
Принадлежит: Sumitomo Electric Industries, Ltd.

A method of manufacturing a semiconductor optical device includes a step of bonding a semiconductor element to a substrate that includes silicon, the semiconductor element being made of a III-V compound semiconductor and having optical gain; after the step of bonding the semiconductor element, a step of molding the semiconductor element by wet-etching; and after the step of molding the semiconductor element, a step of forming a mesa at the semiconductor element. The substrate includes a waveguide, a groove that extends along the waveguide, a terrace that is positioned on a side of the groove opposite to the waveguide, and a wall that covers the groove. The step of bonding the semiconductor element is a step of bonding the semiconductor element to the waveguide, the groove, the terrace, and the wall of the substrate. 1. A method of manufacturing a semiconductor optical device , comprising:a step of bonding a semiconductor element to a substrate that includes silicon, the semiconductor element being made of a III-V compound semiconductor and having optical gain;after the step of bonding the semiconductor element, a step of molding the semiconductor element by wet-etching; andafter the step of molding the semiconductor element, a step of forming a mesa at the semiconductor element,wherein the substrate includes a waveguide, a groove that extends along the waveguide, a terrace that is positioned on a side of the groove opposite to the waveguide, and a wall that covers the groove, andwherein the step of bonding the semiconductor element is a step of bonding the semiconductor element to the waveguide, the groove, the terrace, and the wall of the substrate.2. The method of manufacturing a semiconductor optical device according to claim 1 , wherein claim 1 , in the step of molding the semiconductor element claim 1 , the semiconductor element is molded so that an end portion of the semiconductor element is positioned on the wall.3. The method of manufacturing a semiconductor ...

Подробнее
Номер записи: 96
03-06-2021 дата публикации

Optoelectronic component

Номер: US20210167581A1
Автор: Alfred Lell, Andreas Löffler, Clemens Vierheilig, Sven GERHARD
Принадлежит: OSRAM OLED GmbH

An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation and is arranged in a plane, wherein the layer structure includes a top side and four side faces, first and third side faces are arranged opposite one another, second and fourth side faces are arranged opposite one another, a strip-shaped ridge structure is arranged on the top side of the layer structure and extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, wherein a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, the second recess extends as far as the second side face, and at least one third recess is introduced into a base face of the first recess laterally alongside the ridge structure.

Подробнее
Номер записи: 97
18-05-2017 дата публикации

DUAL-RING-MODULATED LASER THAT USES PUSH-PULL MODULATION

Номер: US20170139237A1
Автор: Bovington Jock T., Krishnamoorthy Ashok V., Lin Shiyun, Luo Ying, Zheng Xuezhe
Принадлежит: ORACLE INTERNATIONAL CORPORATION

A dual-ring-modulated laser includes a gain medium having a reflective end coupled to a gain-medium reflector and an output end coupled to a reflector circuit to form a lasing cavity. This reflector circuit comprises: a first ring modulator; a second ring modulator; and a shared waveguide that optically couples the first and second ring modulators. The first and second ring modulators have resonance peaks, which are tuned to have an alignment separation from each other. During operation, the first and second ring modulators are driven in opposing directions based on the same electrical input signal, so the resonance peaks of the first and second ring modulators shift wavelengths in the opposing directions during modulation. The modulation shift for each of the resonance peaks equals the alignment separation, so the resonance peaks interchange positions during modulation to cancel out reflectivity changes in the lasing cavity caused by the modulation. 1. A dual-ring-modulated laser , comprising:a gain medium having a reflective end coupled to an associated gain-medium reflector;a reflector circuit comprising a first ring modulator, a second ring modulator, a shared waveguide that optically couples the first and second ring modulators together, wherein the first and second ring modulators have resonance peaks that are tuned to have an alignment separation from each other;an input waveguide that couples the gain medium to the reflector circuit to create a lasing cavity;a push-pull drive circuit that drives the first and second ring modulators in opposing directions based on the same electrical input signal, so that the resonance peaks of the first and second ring modulators shift wavelengths in the opposing directions during modulation, wherein the modulation shift for each of the resonance peaks substantially equals the alignment separation, so that the resonance peaks interchange positions during modulation to cancel out reflectivity changes in the lasing cavity ...

Подробнее
Номер записи: 98
08-09-2022 дата публикации

LIGHT GENERATION AND DISTRIBUTION METHODS AND SYSTEMS FOR DISINFECTION, MEDICAL THERAPEUTICS, AND LIGHTING

Номер: US20220283476A1
Автор: Eden J. Gary, Mironov Andrey
Принадлежит:

A light generation and light distribution method. The method includes generating laser light with a semiconductor laser or an array of semiconductor lasers at a generation location. Light generated by the semiconductor laser is guided to a frequency converter. Light converted by the frequency converter is directed to a plurality of distribution locations. The distribution locations can be remote or local. A light generation and light distribution system includes a semiconductor laser or array of lasers at a generation location. A frequency-conversion optical component modifies the wavelength of the radiation generated by the semiconductor laser to one or more desired wavelengths for disinfection, medical therapy, photochemical processes, and/or lighting. Light extraction and distribution optical components extract from the distribution system a portion of the light in the system so as to provide for one or more of disinfection, medical therapies, general or background lighting, and photochemical processes. 1. A light generation and light distribution method , the method comprising:generating laser light with a semiconductor laser or an array of semiconductor lasers at a generation location;guiding light generated by the semiconductor laser to a frequency converter; andand directing light converted by the frequency converter to a plurality of distribution locations.2. The method of claim 1 , wherein the generation location is a wall or ceiling claim 1 , and the distribution locations are local locations.3. The method of claim 1 , wherein the generation location is a central location and the light generated by the frequency convertor is guided to distribution locations which are one or more of a plurality of remote locations claim 1 , wherein the method comprises:converting a frequency of emission(s) from the semiconductor laser(s) with one or more optical components to one or more wavelengths for disinfection, medical therapy, background or general lighting, or ...

Подробнее
Номер записи: 99
18-05-2017 дата публикации

SILICON PHOTONIC CHIP WITH INTEGRATED ELECTRO-OPTICAL COMPONENT AND LENS ELEMENT

Номер: US20170141533A1
Автор: Caer Charles Jean Ghislain, La Porta Antonio, Offrein Bert J.
Принадлежит:

Embodiments include a silicon photonic chip having a substrate, an optical waveguide on a surface of the substrate and a cavity. The cavity includes an electro-optical component, configured for emitting light perpendicular to said surface and a lens element arranged on top of the electro-optical component. The lens is configured for collimating light emitted by the electro-optical component. The chip also includes a deflector arranged on top of the lens element and configured for deflecting light collimated through the latter toward the optical waveguide. The lens element includes electrical conductors connected to the electro-optical component. The electrical conductors of the lens element may for instance include one or more through vias, one or more bottom electrical lines on a bottom side of the lens element (facing the electro-optical component), and at least one top electrical line. 1. A silicon photonic chip , comprising:a substrate;an optical waveguide on a surface of the substrate; an electro-optical component, configured for emitting light perpendicular to said surface; and', 'a lens element arranged on top of the electro-optical component and configured for collimating light emitted by the electro-optical component ter,', 'a deflector arranged on top of the lens element and configured for deflecting light collimated through the deflector toward the optical waveguide, wherein the lens element comprises electrical conductors connected to the electro-optical component., 'a cavity, comprising2. The silicon photonic chip of claim 1 , wherein the electrical conductors of the lens element comprise one or more through vias.3. The silicon photonic chip of claim 2 , wherein the electrical conductors further comprise one or more bottom electrical lines on a bottom side of the lens element claim 2 , which bottom side faces the electro-optical component claim 2 , wherein the one or more vias are connected to the electro-optical component through the one or more bottom ...

Подробнее
Номер записи: 100