Crystal unit

METHOD FOR PRODUCING AN ELECTRONIC COMPONENT IN PARTICULAR A COMPONENT OPERATING WITH SUFACE ACOUSTIC WAVES-SAW COMPONENT-

In an electronic component, especially an SW component with a conductive structure (2) on a substrate (1) and and encapsulation (4) enclosing them on the substrate (1), at least the conductive structures (2) are covered by a gasdiffusion-preventing or inert protective layer (3).

ELECTRONIC COMPONENT, ESPECIALLY ONE OPERATING WITH ACOUSTIC SURFACE WAVES (SW COMPONENT)

An SW component with a component system (1-3) mounted by the flip-chip technique onto a printed circuit board (5) and with a frame (4) surrounding the component structures (1-3), in which conductive tracks (6, 8) are interconnected on the printed circuit board (5) by this through connection (91, 9-2, 9-3) in such a way that components (9-1, 9-2) running in the direction of their extension are mutually staggered and interconnected via a connecting member (9-3).

Ceramic package, the electronic device device and manufacturing method thereof

Small piezoelectric resonator

Ceramic package, electronic component device, and method for manufacturing the electronic component device

Quartz crystal device

Duplexer device and method of manufacturing the same

INTEGRATED ELECTRONIC STRUCTURE

Elastic wave device

Piezoelectric device

In a piezoelectric device and a method of manufacturing thereof, after an ion implanted portion is formed in a piezoelectric single crystal substrate by implantation of hydrogen ions, an interlayer of a metal is formed on a rear surface of the piezoelectric single crystal substrate. In addition, a support member is bonded to the piezoelectric single crystal substrate with the interlayer interposed therebetween. A composite piezoelectric body in which the ion implanted portion is formed is heated at about 450° C. to about 700° C. to oxidize the metal of the interlayer so as to decrease the conductivity thereof. Accordingly, the conductivity of the interlayer is decreased, so that a piezoelectric device having excellent resonance characteristics is provided.

PIEZOELECTRIC ELEMENT, ULTRASONIC PROBE, ULTRASONIC MEASUREMENT DEVICE, AND MANUFACTURING METHOD OF PIEZOELECTRIC ELEMENT

A piezoelectric element, in which a piezoelectric body, and a vibrating plate having [111]-oriented single crystal silicon as a vibrating material are laminated is provided. In addition, a manufacturing method of a piezoelectric element including: cutting out a vibrating material to be used in the vibrating plate from a [111]-oriented single crystal silicon wafer; and laminating a piezoelectric body and the vibrating plate is provided.

Quartz crystal supports

In a crystal unit, at least two places of an outer circumference of a quartz crystal blank 1, which are places that correspond to both ends of a stress sensitivity zero axis of the crystal blank, are supported by supporters 7 and fixed to the supporters by conductive adhesive 10. Each supporter includes; a vertical portion 7b with a surface extending vertically, a closed-end slit 8 formed in the vertical portion, and a tongue 9 projecting from a lower end of the slit. Each conductive adhesive includes: a portion 10a between the tongue and lower crystal surface ; a portion 10b extending from an outer surface of the supporter, through the slit, to the crystal end face; and a portion 10c formed between an inner surface of the supporter and an upper surface of the crystal blank. The supports 7 are connected to lead wires 6 that are insulated 5 from horizontal metal base 2 and the crystal is parallel to the principle surface of the base 2. The crystal can be a double rotated Y-cut crystal with ...

PIEZOELECTRIC DEVICE AND METHOD FOR MANUFACTURING THE SAME

In a piezoelectric device and a method of manufacturing thereof, after an ion implanted portion is formed in a piezoelectric single crystal substrate by implantation of hydrogen ions, an interlayer of a metal is formed on a rear surface of the piezoelectric single crystal substrate. In addition, a support member is bonded to the piezoelectric single crystal substrate with the interlayer interposed therebetween. A composite piezoelectric body in which the ion implanted portion is formed is heated at about 450° C. to about 700° C. to oxidize the metal of the interlayer so as to decrease the conductivity thereof. Accordingly, the conductivity of the interlayer is decreased, so that a piezoelectric device having excellent resonance characteristics is provided.

THIN FILM PIEZOELECTRIC ACOUSTIC WAVE RESONATOR AND MANUFACTURING METHOD THEREFOR, AND FILTER

A thin film piezoelectric acoustic wave resonator and a manufacturing method therefor, and a filter. The thin film piezoelectric acoustic wave resonator includes: a first base, an upper electrode, a piezoelectric plate body, a lower electrode and an isolation cavity. The upper electrode, the piezoelectric plate body and the lower electrode are arranged on an upper surface of the first base and are stacked sequentially from top to bottom. The upper electrode, the piezoelectric plate body and the lower electrode have an overlapping region in a direction perpendicular to the surface of the piezoelectric plate body, in which a first gap is formed between the piezoelectric plate body and the upper electrode, and a second gap is formed between the piezoelectric plate body and the lower electrode. The isolation cavity surrounds the periphery of the piezoelectric plate body and connects the first and second gaps together. At least one connecting bridge is arranged between the piezoelectric plate ...

Elektroakustischer Resonator und Verfahren zu dessen Herstellung

Die Erfindung betrifft einen elek¬tro¬akus¬tischen Resonator (1) mit einer Diamant¬schicht (2) mit einer ersten Seite (21) und einer gegenüberliegenden zweiten Seite (22) und einer piezo¬elek¬trischen Schicht (4), welche auf der zweiten Seite der Diamant¬schicht (22) angeordnet ist, wobei die Diamant¬schicht (2) mit der ersten Seite (21) auf ein zweites Substrat (6) aufgebracht ist. Weiterhin betrifft die Erfindung zwei Verfahren zur Herstellung eines elektroakustischen Resonators (1).

Surface wave component comprises a surface wave element, a housing arranged to hermetically seal the element, and a sealing material connecting the housing and the base part of the housing

Surface wave component comprises: a surface wave element (2); a housing arranged to hermetically seal the element; and a sealing material (7) connecting the housing and the base part (1) of the housing. The conducting lid part (3) of the housing is covered with a sealing material (7). An Independent claim is also included for a process for the production of the surface wave component.

SMALL PIEZOELECTRIC RESONATOR

CRYSTAL OSCILLATOR PACKAGE

A crystal oscillator package of the present invention includes: an oscillating means formed to oscillate by an excitation electrode; and a plurality of leg members extended from the oscillating means and formed to be connected to a fixing member formed on a substrate. The maximum distance between the plurality of leg members is formed to be less than or equal to the maximum width of the oscillating means. COPYRIGHT KIPO 2016 ...

SMALL PIEZOELECTRIC RESONATOR

Piezoelectric device and its manufacturing method

The present invention provides a piezoelectric device that resists impacts from the outside and stress applied to a piezoelectric resonator element and which has improved electrical conductivity between an electrode side of a package base and the piezoelectric resonator element. To achieve the object, there is provided a piezoelectric device which comprises mounting electrodes (44) which are provided on the package base (42), to which a driving voltage is carried via conduction paths (44b), and on which the piezoelectric resonator element is mounted; and anchor members (41, 41) which are disposed on the surfaces of the mounting electrodes (44, 44) and which are formed of a material having superior adhesion to those surfaces. The resonator element is bonded to these conductive anchor members with silicone-based conductive adhesive (15, 15).

CERAMIC PACKAGE, ELECTRONIC COMPONENT DEVICE, AND METHOD FOR MANUFACTURING THE ELECTRONIC COMPONENT DEVICE

A ceramic package includes a package body made of a ceramic and including a pair of surfaces, and side surfaces, disposed between four sides of one of the surfaces and four sides of the other surface; a cavity that has an opening in the surface of the package body; a metalizing layer disposed over the surface of the package body surrounding the opening of the cavity; and a metal frame joined to an upper surface of the metalizing layer with a brazing filler metal layer interposed therebetween. The surface surrounding the opening of the cavity includes pairs of opposing side portions and each side portion of at least one of the pairs has a recessed portion in a middle portion of the side portion and a pair of flat portions on respective sides of the recessed portion.

Electrical Component

A stable electrical component includes a carrier substrate and a chip (2) mounted thereon. The component has a reactance element and a supporting element, which are at least partly arranged between the carrier substrate and the chip. The reactance element is at least partly realized by means of at least one conductor track. The reactance element includes a coil, a capacitor or a transmission line.

A compact duplexer comprising a pair of stacked flip-chip bonded acoustic wave filters

A duplexer comprises a substrate 110 on which a first filter chip 121 is flip-chip bonded, A second acoustic wave filter chip 131 is flip-chip bonded to the back of the first chip 121, which contains vias V2 for connecting the second chip 131 to the substrate. The first filter may be a SAW filter and the second filter may be an FBAR filter. The chips may be embedded in resin 140. A separate protective structure is not required. The duplexer is compact and inexpensive to produce.

VIBRATOR, OSCILLATOR, ELECTRONIC DEVICE, AND MOVING OBJECT

A MEMS vibrator includes: a substrate; a base portion which is disposed on the substrate; and a plurality of vibration portions which extend in directions different from each other from the base portion. The MEMS vibrator has a curved surface between the adjacent vibration portions.

Method of producing an electronic component, in particular a surface acoustic wave component

The electronic component, specifically a SAW component with conductive structures disposed on a substrate is encapsulated for protection against environmental influences. The electrically conductive structures are sealed with a gas diffusion-constricting protective layer formed with an electrochemical or ion bombardment process.

Three-terminal noise filter having M-shaped lead

The invention discloses a 3-terminal noise filter for preventing electro-magnetic interferences, and a process for manufacturing thereof. A lead wire is bent into an M shaped structure, with a depressed portion being formed on the upper portion of the M shape structure. A separate lead is disposed as a capacitor lead, and the bottom of the depressed portion and the leading end of the capacitor lead are pressed into first and second flat portions. Then a capacitor is soldered on the first and second flat portions. The man-hours for the manufacturing of the filter are reduced, and the mechanical and electrical characteristics are stabilized, and the manufacturing cost is saved by the use of low cost materials.

Planar resist structure, in particular an encapsulation for electronic component, and thermomechanical production process

In a thermomechanical process for planarizing a resist layer applied to a partly elevated carrier area, a resist structure, in particular an encapsulation for electronic components, is obtained. In this case, a dry resist sheet, formed of a composite of a temperature-resistant protective sheet and a photosensitive layer, is applied by its photosensitive layer to a surface of the carrier and the dry resist sheet is planarized under pressure and with heat. After which the photosensitive layer is exposed, and the protective sheet is removed and the photosensitive layer is developed.

Quartz crystal device

A quartz crystal device includes a quartz-crystal vibrating piece, a container, and a pedestal. The container houses the quartz-crystal vibrating piece. The pedestal is located between the quartz-crystal vibrating piece and the container for connecting and fixing the quartz-crystal vibrating piece to the container. The pedestal is configured with a crystal. The pedestal is fixed to the container at three places of a first fixation point, a second fixation point, and a third fixation point in a plan view. The first fixation point, the second fixation point, and the third fixation point are configured so as to become positions where an inner center, an outer center, or a gravity center of a triangle formed by connection of the first, second and third fixation points and a gravity center of the pedestal match.

PIEZOELECTRIC DEVICE AND METHOD FOR MANUFACTURING PIEZOELECTRIC DEVICE

A piezoelectric device having resonance characteristics which are not degraded even if an interlayer for bonding is provided between a piezoelectric thin film and a support member and a method for manufacturing the piezoelectric device are provided. After an ion implanted portion is formed in a piezoelectric single crystal substrate (1) by implantation of hydrogen ions, an interlayer (32) of a metal is formed on a rear surface (12) the piezoelectric single crystal substrate (1). In addition, a support member (30) is bonded to the piezoelectric single crystal substrate (1) with this interlayer (32) interposed therebetween. A composite piezoelectric body (2) in which the ion implanted portion is formed or a composite piezoelectric substrate (3) obtained by heat separation of the piezoelectric single crystal substrate (1) is heated at 450°C to 700°C to oxidize the metal of the interlayer, so that the conductivity thereof is decreased. Accordingly, since the interlayer of a metal is formed, ...

Elektrisches Bauelement

Es wird ein elektrisches Bauelement mit einem Trägersubstrat (1) und einem auf diesem montierten Chip (2) angegeben. Das Bauelement weist ein Reaktanzelement auf, das zumindest teilweise zwischen dem Trägersubstrat (1) und dem Chip (2) angeordnet und zumindest teilweise mittels mindestens einer Leiterbahn (31) realisiert ist. Das Reaktanzelement umfasst mindestens ein Element, ausgewählt aus mindestens einer Spule, mindestens einem Kondensator und mindestens einer Übertragungsleitung. Als Übertragungsleitung wird eine Leitung bezeichnet, die bei einer Durchlassfrequenz des Bauelements eine Phasendrehung von mindestens 30° bewirkt.

Integrated electronic structure

VIBRATION STRUCTURE

A vibration structure that includes a film having a first electrode on a first main surface thereof, the first electrode defining a first connection region on the first main surface where the first electrode is not present, and the film is constructed to be deformed in a plane direction when a voltage is applied thereto; a frame-shaped member; a vibration portion surrounded by the frame-shaped member; a first connection member that connects the first main surface of the film to the frame-shaped member at the first connection region; a second connection member that connects the film to the vibration portion; and an extended electrode that is connected to the first electrode.

Electrical component and production method

What is proposed is a preferably surface mounted electrical component with sensitive component structures which are arranged on the front side of two substrates. The substrates are joined with their front sides facing each other in such a manner that a cavity will remain for the component structures. The outer electrical connections for all component structures are located on the surface of one of the two substrates, in particular on the back side of the upper, or on the front side of the lower substrate. Between the two substrates there is a suitably structured intermediate layer which is used both as a spacer and also for sealing of the housing of the cavity.

QUARTZ CRYSTAL DEVICE

A quartz crystal device includes a crystal element, a container, a conductive adhesive having flexibility, first pillow portions, and a second pillow portion. The first pillow portions hold the crystal element floated from an inner bottom surface of the container at the proximities of the two positions. The second pillow portion opposes the crystal element at a proximity of a second side. The second side opposes the first side of the crystal element. A height of the first pillow portion is represented as h and a length of the first pillow portion in a direction perpendicular to the first side is represented as X1, where the h is 20 μm to 50 μm and the X1 is 150 μm or less. The conductive adhesive covers at least a top surface and a side surface of the first pillow portion. The side surface is in a center side of the crystal element.

Thermomechanical process for producing a planar resist structure

In a thermomechanical process for planarizing a resist layer applied to a partly elevated carrier area, a resist structure, in particular an encapsulation for electronic components, is obtained. In this case, a dry resist sheet, formed of a composite of a temperature-resistant protective sheet and a photosensitive layer, is applied by its photosensitive layer to a surface of the carrier and the dry resist sheet is planarized under pressure and with heat. After which the photosensitive layer is exposed, and the protective sheet is removed and the photosensitive layer is developed.

ELECTRONIC COMPONENT MANUFACTURING METHOD, VIBRATOR DEVICE, ELECTRONIC APPARATUS, AND VEHICLE

An electronic component manufacturing method, in which a notch and a concave portion are formed in a substrate, includes forming an etching mask in which a maximum width of a first mask portion which forms a width between two side surfaces of the concave portion along a longitudinal direction, when the substrate is seen in a plan view from a direction perpendicular to a surface of the substrate having the concave portion formed therein, is smaller than a width of a second mask portion which forms a minimum width of an opening of the notch, and forming the notch and the concave portion by performing dry etching processing on the substrate.

Piezoelectric package-integrated film bulk acoustic resonator devices

Embodiments of the invention include a piezoelectric package integrated filtering device that includes a film stack. In one example, the film stack includes a first electrode, a piezoelectric material in contact with the first electrode, and a second electrode in contact with the piezoelectric material. The film stack is suspended with respect to a cavity of an organic substrate having organic material and the film stack generates an acoustic wave to be propagated across the film stack in response to an application of an electrical signal between the first and second electrodes.

Elektrisches Bauelement und Herstellungsverfahren

Bauelement – mit einem ersten Substrat (S1), auf dessen Vorderseite erste Bauelementstrukturen (BS1) angeordnet sind, – mit einem zweiten Substrat (S2), auf dessen Vorderseite zweite Bauelementstrukturen (BS2) angeordnet sind, – bei dem zwischen den beiden Substraten (S) eine strukturierte Zwischenschicht (ZS) als Abstandsstruktur angeordnet ist, die das erste Substrat (S1) und das zweite Substrat (S2) miteinander verbindet, – bei dem im Bereich der Bauelementstrukturen (BS) Ausnehmungen (AN) in der Zwischenschicht vorgesehen sind, wobei die Zwischenschicht eine erste und eine zweite Lage eines elektrisch isolierenden Materials umfasst, wobei zwischen den beiden Lagen Metallisierungsebenen mit dort verlaufenden Leiterbahnen oder Leiterbahnabschnitten vorgesehen sind, die elektrisch mit Bauelementstrukturen zumindest eines der beiden Substrate verbunden sind, – bei dem die beiden Substrate elektrisch und mechanisch miteinander verbunden sind, – bei dem die beiden Vorderseiten zueinander ...

Elektrisches Bauelement

Elektrisches Bauelement mit einem Trägersubstrat (1) und einem auf diesem montierten Chip (2), wobei der Chip (2) mit akustischen Wellen arbeitende Bauelement-Strukturen (21) aufweist, die auf der zum Trägersubstrat (1) gewandten Seite des Chips (2) angeordnet sind, wobei die Bauelement-Strukturen (21) zumindest eine Komponente umfassen, ausgewählt aus einem akustischen Resonator, einem elektroakustischen Wandler und einem akustischen Reflektor, mit mindestens einem Reaktanzelement, das auf der Oberseite des Trägersubstrats (1) in einem Spalt zwischen dem Trägersubstrat (1) und dem Chip (2) angeordnet und zumindest teilweise mittels mindestens einer Leiterbahn (31) realisiert ist, die auf der Oberseite des Trägersubstrats aufgebracht ist, wobei das Reaktanzelement eine Spule umfasst wobei die mindestens eine Leiterbahn (31) eine erste auf dem Trägersubstrat aufliegende, leitfähige Schicht (7) und eine teilweise auf der ersten leitfähigen Schicht (7) angeordnete zweite leitfähige Schicht ...

Crystal unit

Piezoelectric component

Piezoelectric resonator unit and method of manufacturing the same

A method of manufacturing a piezoelectric resonator unit that includes preparing a piezoelectric resonator having a piezoelectric element, a pair of excitation electrodes respectively disposed on a first main surface and a second main surface of the piezoelectric element so as to face each other with the piezoelectric element therebetween, and a pair of connection electrodes that are respectively electrically connected to the pair of excitation electrodes; electrically connecting the pair of connection electrodes to a pair of electrode pads on a third main surface of a base member using an electroconductive holding member so as to excitably hold the piezoelectric resonator on the third main surface of the base member; and attaching an electroconductive material, which is scattered from an electroconductive member, to a surface of the electroconductive holding member.

Elastic wave device, high-frequency front-end circuit, and communication device

An elastic wave device includes a support substrate made of silicon, a piezoelectric film disposed directly or indirectly on the support substrate, and an interdigital transducer electrode disposed on one surface of the piezoelectric film. A higher-order mode acoustic velocity of propagation through the piezoelectric film is equal or substantially equal to an acoustic velocity Vsi=(V1)1/2of propagation through silicon or higher than the acoustic velocity Vsi, where Vsiis specified by V1among solutions V1, V2, and V3with respect to x derived from Ax3+Bx2+Cx+D=0.

Chip mit vier mit akustischen Oberflächenwellen arbeitenden Filtern

Die Erfindung betrifft einen Chip (CH), der vier mit akustischen Oberflächenwellen arbeitende Filter (F1, F2, F3, F4) und Eingangs- und zwei Ausgangsports (EP1, EP2, AP1, AP2) aufweist. Jedes Filter (F1, F2, F3, F4) deckt ein unterschiedliches Frequenzband ab. Jeder der Eingangs- und Ausgangsports (EP1, EP2, AP1, AP2) ist mit einem oder zwei Filtern (F1, F2, F3, F4) verbunden.

Mit akustischen Volumenwellen arbeitendes BAW-Filter, Herstellungsverfahren hierfür und Duplexer

Mit akustischen Volumenwellen arbeitendes BAW-Filter, das einen Mehrlagenaufbau aufweist, bei dem durch den Mehrlagenaufbau Funktionsschichten eines mit akustischen Volumenwellen arbeitenden BAW-Resonators realisiert werden, und bei dem ferner durch den Mehrlagenaufbau eine Verschaltung passiver Bauelemente gebildet wird, die einen Balun bildet, wobei der Balun zumindest eine Induktivität (L1, L2, L3) und zumindest eine Kapazität (C1, C2) aufweist, die aus strukturierten Funktionsschichten des BAW-Resonators gebildet werden.

PIEZOELECTRIC DEVICE AND METHOD FOR MANUFACTURING PIEZOELECTRIC DEVICE

Quartz crystal device

A quartz crystal device with an excellent property and having a pedestal configured with a crystal is provided. The quartz crystal device 10 includes a quartz-crystal vibrating piece, a container, and a pedestal configured with a crystal. Each planar shape of the quartz-crystal vibrating piece and the pedestal is rectangular shape. The pedestal is fixed to the container at three places of a first fixation point, a second fixation point, and a third fixation point. The first fixation point, the second fixation point, and the third fixation point are configured so as to become positions where an inner center, an outer center, or a gravity center of a triangle formed by connection of the first, second and third fixation points and a gravity center of the pedestal match.

PIEZOELECTRIC DEVICE AND METHOD FOR MANUFACTURING PIEZOELECTRIC DEVICE

Piezoelectric device, manufacturing method therefor, and method for manufacturing piezoelectric oscillator

The invention provides a piezoelectric device having a structure which resists impact from the exterior and which can enhance electrical conductance between an electrode side of a package base and a piezoelectric resonator element. A piezoelectric device having a structure in which a piezoelectric resonator element is bonded to electrodes provided on a package base, includes underlying exposed electrodes as mounting electrodes which are provided on the package base and on which the piezoelectric resonator element is mounted; and gold-plated electrodes which are provided on the package base and to which a driving voltage is carried via conduction paths; in which the underlying exposed electrodes and the gold-plated electrodes are connected to each other with conductive adhesives provided therebetween, and the piezoelectric resonator element is bonded to the underlying exposed electrodes with silicone-based conductive adhesives provided therebetween.

Surface acoustic wave device having bump electrodes

An electronic element includes a substrate with electrode pads provided thereon. Intermediate electrodes include base electrodes on the bottom surface of the intermediate electrodes, and the bottom surface of the intermediate electrodes are disposed on the electrode pads. Bump electrodes are provided on the intermediate electrodes and include a metal having a melting point of about 450° C. or more. Further, the base electrodes include a metallic material that can reduce orientation of the intermediate electrodes.

PIEZOELECTRIC DEVICE AND METHOD FOR MANUFACTURING THE SAME

In a piezoelectric device and a method of manufacturing thereof, after an ion implanted portion is formed in a piezoelectric single crystal substrate by implantation of hydrogen ions, an interlayer of a metal is formed on a rear surface of the piezoelectric single crystal substrate. In addition, a support member is bonded to the piezoelectric single crystal substrate with the interlayer interposed therebetween. A composite piezoelectric body in which the ion implanted portion is formed is heated at about 450° C. to about 700° C. to oxidize the metal of the interlayer so as to decrease the conductivity thereof. Accordingly, the conductivity of the interlayer is decreased, so that a piezoelectric device having excellent resonance characteristics is provided. 1. A piezoelectric device comprising:a piezoelectric thin film on which an electrode is provided; anda support member arranged to support the piezoelectric thin film; whereinthe piezoelectric device includes an interlayer which includes an oxidized or a nitrided metal and which is provided between the piezoelectric thin film and the support member.2. The piezoelectric device according to claim 1 , wherein the oxidized or the nitrided metal includes at least one element selected from Fe claim 1 , Cr claim 1 , Ni claim 1 , Al claim 1 , W claim 1 , and Cu.3. The piezoelectric device according to claim 1 , wherein the interlayer has a thickness of about 2 nm to about 25 nm.4. The piezoelectric device according to claim 1 , wherein the piezoelectric thin film includes lithium tantalate or lithium niobate.5. The piezoelectric device according to claim 1 , wherein the piezoelectric thin film has a conductivity of about 1.0×10Ω·mto about 1.0×10Ω·m. 1. Field of the InventionThe present invention relates to a piezoelectric device including a piezoelectric single-crystal thin film and a support member supporting the thin film and a method for manufacturing the piezoelectric device.2. Description of the Related ArtAt present, ...

Thermomechanisches Verfahren zum Planarisieren einer fototechnisch strukturierbaren Schicht, insbesondere Verkapselung für elektronische Bauelemente

Oberflächenwellenbauelement

Ein Oberflächenwellenbauelement umfaßt ein Oberflächenwellenelement und ein Gehäuse. Das Gehäuse weist ein Basisbauglied und ein leitfähiges Deckelbauglied auf, die durch ein Dichtungsmaterial verbunden sind, um das Oberflächenwellenelement in demselben hermetisch abzudichten. Das leitfähige Deckelbauglied ist auf der gesamten Oberfläche desselben, die gegenüber dem Basisbauglied angeordnet ist, mit dem Dichtungsmaterial überzogen.

ELASTIC WAVE DEVICE, HIGH-FREQUENCY FRONT-END CIRCUIT, AND COMMUNICATION DEVICE

An elastic wave device includes a support substrate made of silicon, a piezoelectric film disposed directly or indirectly on the support substrate, and an interdigital transducer electrode disposed on one surface of the piezoelectric film. A higher-order mode acoustic velocity of propagation through the piezoelectric film is equal or substantially equal to an acoustic velocity Vsi=(V1)1/2of propagation through silicon or higher than the acoustic velocity Vsi, where Vsiis specified by V1among solutions V1, V2, and V3with respect to x derived from Ax3+Bx2+Cx+D=0.

Elektronisches Bauelement insbesondere mit akustischen Oberflächenwellen arbeitendes Bauelement - OFW-Bauelement -

In an electronic component, especially an SW component with a conductive structure (2) on a substrate (1) and and encapsulation (4) enclosing them on the substrate (1), at least the conductive structures (2) are covered by a gas-diffusion-preventing or inert protective layer (3).

Ceramic package, electronic component device, and method for manufacturing the electronic component device

Provided is a ceramic package or the like that has highly reliable airtightness such that, even when the metal lid is seam-welded to the upper surface of a metal frame having a rectangular frame shape when viewed in a plan and joined onto a metalizing layer, surrounding the opening, with the filler metal interposed therebetween for sealing the opening of the cavity open to a surface of a package body, a rectangular metal lid plate or a filler metal is not partially melted by heat transmitted from a pair of roller electrodes used for welding or electric resistance heat. A ceramic package 1a includes a package body 2a made of a ceramic and including a pair of surfaces 3 and 4, having a rectangular outline when viewed in a plan, and side surfaces 5a and 5b, disposed between four sides of one of the surfaces and four sides of the other surface; a cavity 6 that has an opening in the surface 3 of the package body 2a and is rectangular when viewed in a plan; a metalizing layer 10 disposed over ...

Low-noise low-emission crystal oscillator and method thereof

A crystal oscillator includes an inverter configured to receive a first voltage at a first node and output a second voltage at a second node, a stacked-diode feedback network inserted between the first node and the second node, a waveform shaper configured to couple the second node to a third node in accordance with the first voltage, a crystal inserted between a fourth node and a fifth node, wherein the fourth node is coupled to the third node, and the fifth node is coupled to the first node, a first shunt capacitor inserted between the fourth node and a ground node, and a second shunt capacitor inserted between the fifth node to and the ground node.

Resonator, unit and oscillator

A resonator comprising a base portion, first and second vibrational arms, and a frame having first, second, third and fourth frame portions, the first and second frame portions extending in a common direction with the vibrational arms, third frame portion being connected to the base portion, the first frame portion being connected to the second frame portion through the third and fourth frame portions, each of the vibrational arms having a first vibrational portion including a first width and a first length, and a second vibrational portion including a second width greater the first width and a second length less than the first length, a groove being formed in at least one of main surfaces of each vibrational arm, and a spaced-apart distance between the second vibrational portions being less than a spaced-apart distance between the first frame portion and the first vibrational portion of the first vibrational arm.

ELEKTRONISCHES BAUELEMENT, INSBESONDERE MIT AKUSTISCHEN OBERFLÄCHENWELLEN ARBEITENDES BAUELEMENT - OFW-BAUELEMENT

Vibrator, oscillator, electronic device, and moving object

Crystal oscillator package and vibrating part thereof

Surface acoustic wave device having bump electrodes and method for producing the same

An electronic element includes a substrate with electrode pads provided thereon. Intermediate electrodes include base electrodes on the bottom surface of the intermediate electrodes, and the bottom surface of the intermediate electrodes are disposed on the electrode pads. Bump electrodes are provided on the intermediate electrodes and include a metal having a melting point of about 450° C. or more. Further, the base electrodes include a metallic material that can reduce orientation of the intermediate electrodes.

BULK-ACOUSTIC WAVE RESONATOR

A bulk-acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially covering the lower electrode; and an upper electrode at least partially covering the piezoelectric layer. On a surface of the bulk-acoustic wave resonator, a centroid of an active area in which the lower electrode, the piezoelectric layer, and the upper electrode all overlap each other is aligned with a center of a rectangle defining an aspect ratio of the active area. The active area has a shape of a polygon symmetrical with respect to at least one axis passing through the center of the rectangle defining the aspect ratio. The aspect ratio is greater than or equal to 2 and less than or equal to 10.

ACOUSTIC WAVE DEVICE, HIGH-FREQUENCY FRONT-END CIRCUIT, AND COMMUNICATION DEVICE

In an acoustic wave device, a piezoelectric body is directly or indirectly laminated on a silicon support substrate, and a functional electrode is provided on the piezoelectric body. A support layer is directly or indirectly laminated on the silicon support substrate, and the support layer is located outside the functional electrode when viewed in plan view. A silicon cover layer is provided on the support layer that includes an insulating material, and a space A is defined by the silicon support substrate, the support layer, and the silicon cover layer. The electric resistance of the silicon support substrate is higher than the electric resistance of the silicon cover layer.

Quartz Piece And Quartz Crystal

Quartz crystal unit, quartz crystal oscillator and electronic apparatus

In a quartz crystal unit, the unit comprising a case, and a resonator having a base portion, and first and second vibrational arms, the base portion having a first base portion including a first width, and a second base portion including a second width greater than the first width, each of the first and second vibrational arms having a first vibrational portion including a first width and a first length, and a second vibrational portion including a second width greater the first width and a second length less than the first length, the second base portion being mounted on a mounting portion of the case, at least one groove being formed in at least one of opposite main surfaces of the first vibrational portion of each vibrational arm, and a spaced-apart distance between the second vibrational portions of the first and second vibrational arms being less than a length of the second base portion of the base portion.

BULK ACOUSTIC RESONATOR AND FILTER

A bulk acoustic resonator includes a substrate, a first electrode disposed above the substrate, a piezoelectric body disposed on the first electrode and including a plurality of piezoelectric layers each including aluminum nitride with a doping material, and a second electrode disposed on the piezoelectric body, where at least one of the piezoelectric layers is a compressive piezoelectric layer formed under compressive stress.

METHOD FOR MANUFACTURING ELECTRONIC COMPONENT MODULE AND ELECTRONIC COMPONENT MODULE

A method for producing an electronic component module prevents a space from collapsing. The method includes a step of preparing an electronic component including an element substrate, a drive device formed on a principal surface of the element substrate, and a protection device covering the drive device so as to form a space around the drive device; a step of fixing the electronic component on a common substrate such that a principal surface of the common substrate and another principal surface of the element substrate face each other; a step of fixing a reinforcing plate on the protection device of the electronic component; and a step of forming a resin layer on the principal surface of the common substrate such that the electronic component is contained therein. 1. (canceled)2. A method for manufacturing an electronic component module , the method comprising:a step of preparing an electronic component including an element substrate, a drive device formed on a principal surface of the element substrate, and a protection device arranged so as to form a space around the drive device and cover the drive device;a step of preparing a common substrate, and mounting and fixing the electronic component on the common substrate by using a mounter such that a principal surface of the common substrate and another principal surface of the element substrate face each other;a step of mounting and fixing a reinforcing plate on the protection device of the electronic component by using a mounter; anda step of forming a resin layer on the principal surface of the common substrate such that the electronic component is contained therein.3. The method for manufacturing the electronic component module according to claim 2 , wherein claim 2 , in the step of fixing the reinforcing plate claim 2 , an adhesive layer is previously formed on a surface of the reinforcing plate claim 2 , and the reinforcing plate is fixed such that the adhesive layer is located between the protection device and ...

탄성파 장치, 고주파 프론트 엔드 회로 및 통신 장치

... 고차 모드의 응답을 효과적으로 억제할 수 있는, 탄성파 장치를 제공한다. 실리콘으로 이루어지는 지지 기판(2)과, 지지 기판(2) 상에 직접 또는 간접적으로 마련된 압전막(4)과, 압전막(4)의 한쪽면에 마련된 IDT전극(5)을 포함하는 탄성파 장치(1). 압전막(4)을 전파하는 고차 모드의 음속이, 하기의 식(2)로부터 도출되는 x의 해답 V1, V2, V3 중의 V1에 의해 규정되는 실리콘을 전파하는 음속 VSi=(V1)1/2과 같거나, 음속 VSi보다도 고속으로 되어 있다. Ax3+Bx2+Cx+D=0 …식(2) ...

CERAMIC PACKAGING BASE BOARD

A ceramic packaging base board comprises a packaging substrate (1), a circuit layout layer printed on the substrate (1) and a fixed packaging layer. The circuit layout layer comprises at least one metallic paste region (3), and at least one compensated metallic paste region (4) corresponding to the metallic paste region (3) disposed on the blank region (2) where the metallic paste region (3) does not exist. By adding a compensated metallic paste region symmetrical to the metallic paste region, it is possible to reduce the mechanical strength and efficiently improve the distortion of the base board.

Acoustic wave device

An acoustic wave device includes an acoustic wave substrate including a first main surface and a second main surface, IDT electrodes provided on the first main surface, and sealing resin covering at least the second main surface of the acoustic wave substrate. A hollow is provided in a region where the IDT electrodes on the first main surface of the acoustic wave substrate is located. The sealing resin has through-holes each extending from a top surface 13B of the sealing resin to the second main surface of the acoustic wave substrate. The acoustic wave substrate is made of silicon or includes a layer made of silicon.

DRIVE UNIT AND METHOD FOR OPERATING A DRIVE UNIT

An oscillating drive unit for driving a passive element relative to an active element includes a resonator with at least two arms extending in parallel to a reference plane, one of the arms including a contact element, movable by way of oscillating movements, for driving the passive element relative to the active element. Two of the arms extend in a substantially symmetric manner, and an other one of the arms is arranged not to come into contact with the passive element.

CONSTANT TEMPERATURE TYPE CRYSTAL OSCILLATOR FOR SURFACE MOUNTING

PROBLEM TO BE SOLVED: To provide a constant temperature type crystal oscillator for surface mounting with reduced height. SOLUTION: The constant temperature type crystal oscillator for surface mounting includes: a flat first substrate 11a on which are installed a crystal device 1 and a heat resistor 5h and which is made of ceramic; and a second substrate 11b which faces the first substrate 11a and has a larger external shape in plan view than the first substrate 11a and which is made of a glass epoxy resin and quadrangular in plan view. The second substrate has an opening 12 into which the crystal device is inserted in a center region, and has terminal sections 16a on four locations corresponding to the surface outer periphery of the first substrate 11a and the peripheral surfaces of the opening 12 in the second substrate 11b, and the terminal sections 16a are connected together by solder. A front end side head section of the crystal device 1 inserted into the opening 12 of the second substrate ...

QUARTZ CRYSTAL OSCILLATOR PACKAGE AND MANUFACTURING METHOD THEREOF

A method for manufacturing a quartz crystal oscillator package is disclosed. The method for manufacturing a quartz crystal oscillator package according to the present invention comprises the following steps of: preparing a substrate having a terminal to be installed; applying an adhesive member including a glass ingredient to the surface of the substrate which surrounds the terminal; performing primary high-temperature treatment on the adhesive member-applied substrate to sinter the adhesive member; mounting a quartz crystal plate on the terminal; disposing a cap housing so that the cap housing accommodates the quartz crystal plate inside and that the lower surface thereof comes in contact with the adhesive member; and performing secondary high-temperature treatment on the adhesive member-applied substrate and the cap housing to seal a space between the substrate and the cap housing by means of the adhesive member. COPYRIGHT KIPO 2016 (AA) Start (BB) End (S100) Substrate preparing step ...

Method of manufacturing surface acoustic wave device having bump electrodes

An electronic element includes a substrate with electrode pads provided thereon. Intermediate electrodes include base electrodes on the bottom surface of the intermediate electrodes, and the bottom surface of the intermediate electrodes are disposed on the electrode pads. Bump electrodes are provided on the intermediate electrodes and include a metal having a melting point of about 450° C. or more. Further, the base electrodes include a metallic material that can reduce orientation of the intermediate electrodes.

Electronic component, esp. one operating with acoustic surface waves (OFW component)

ACOUSTIC WAVE DEVICE

An acoustic wave device includes an acoustic wave substrate including a first main surface and a second main surface, IDT electrodes provided on the first main surface, and sealing resin covering at least the second main surface of the acoustic wave substrate. A hollow is provided in a region where the IDT electrodes on the first main surface of the acoustic wave substrate is located. The sealing resin has through-holes each extending from a top surface 13B of the sealing resin to the second main surface of the acoustic wave substrate. The acoustic wave substrate is made of silicon or includes a layer made of silicon.

BAW-FILTER OPERATING USING BULK ACOUSTIC WAVES

The present invention relates to a BAW filter operating with bulk acoustic waves, which has a multilayer construction, wherein functional layers of a BAW resonator operating with bulk acoustic waves are realized by the multilayer construction, and wherein an interconnection of passive components is furthermore formed by the multilayer construction, said interconnection forming a balun, wherein the balun has at least one inductance (L1, L2, L3) and at least one capacitance (C1, C2) which are formed from structured functional layers of the BAW resonator. Furthermore, the invention relates to a method for producing the BAW filter.

INTEGRIERTE ELEKTRONISCHE STRUKTUR

Elektronisches Bauelement, insbesondere mit akustischen Oberflächenwellen arbeitendes Bauelement - OFW-Bauelement -

An SW component with a component system (1-3) mounted by the flip-chip technique onto a printed circuit board (5) and with a frame (4) surrounding the component structures (1-3), in which conductive tracks (6, 8) are interconnected on the printed circuit board (5) by this through connection (9-1, 9-2, 9-3) in such a way that components (9-1, 9-2) running in the direction of their extension are mutually staggered and interconnected via a connecting member (9-3).

Thermomechanisches Verfahren zum Planarisieren einer fototechnisch strukturierbaren Schicht, insbesondere Verkapselung für elektronische Bauelemente

According to the inventive thermomechanical method for planing a resist layer which is applied on a partially raised supporting surface, a resist structure, especially an encapsulation for electronic components, is obtained. To this end, a dry resist film (2) which is comprised of a composite made of a temperature resistant protective film (3) and of a photosensitive layer (4) is applied with the photosensitive layer (4) thereof on the supporting surface (6). The dry resist film (2d) is planed using pressure and heat, whereupon the photosensitive layer is exposed. Afterwards, the protective film (3) is removed and the photosensitive layer is developed.

The piezoelectric device and the piezoelectric device and manufacturing method thereof

Electronic component, especially one operating with acoustic surface waves

A CERAMIC PACKAGE BASE

PIEZOELECTRIC DEVICE, VIBRATION STRUCTURE AND PIEZOELECTRIC SENSOR

A piezoelectric device that includes a film that has a first main surface and a second main surface, and has piezoelectricity; a first substrate; and a first connection member that connects the film to the first substrate. The first connection member is a thermosetting resin, and a curing temperature of the first connection member is lower than a temperature at which the film thermally contracts.

Composite electronic component

A composite electronic component includes a first acoustic wave filter, a second acoustic wave filter, a spacer layer, and a switch. The second acoustic wave filter faces the first acoustic wave filter in a first direction. The switch switches an ON state and an OFF state of the first acoustic wave filter and an ON state and an OFF state of the second acoustic wave filter. A first functional electrode and a second functional electrode are located in a hollow space and face each other in the first direction. The switch brings at least one of the first acoustic wave filter and the second acoustic wave filter into the OFF state.

PACKAGE COMPRISING AN ACOUSTIC DEVICE AND A CAP SUBSTRATE COMPRISING AN INDUCTOR

A package that includes an acoustic device, a frame coupled to the acoustic device and a cap substrate coupled to the acoustic device through the frame. The acoustic device includes a substrate and an acoustic element coupled to the substrate. The cap substrate includes an inductor. The cap substrate is configured as a cap for the acoustic device. The package includes a cavity located between the acoustic device and the cap substrate. The frame may include a polymer frame.

Duplexervorrichtung und Verfahren zu ihrer Herstellung

Es wird eine Duplexervorrichtung beschrieben und ein Verfahren zu ihrer Herstellung. Die Duplexervorrichtung umfasst ein Substrat mit einem Duplexerschaltkreis, einen ersten akustischen Wellenfilterchip, der auf dem Substrat durch Flip-Chip-Ronden angebracht ist, einen zweiten akustischen Wellenfilterchip, der auf dem ersten akustischen Wellenfilterchip durch Flip-Chip-Bonden angebracht ist, und einen Formteilabschnitt, der die ersten und zweiten akustischen Wellenfilterchips bedeckt. Die ersten und zweiten akustischen Wellenfilterchips sind vertikal durch Flip-Chip-Ronden angeordnet, sodass es keinen Bedarf für eine separate Schutzstruktur gibt, um funktionale Bereiche der Vorrichtung zu schützen, nämlich piezoelektrische Schichten, Luftspalte und Elektroden der Chips. Dementsprechend wird ein kompaktes Produkt geschaffen und das Herstellungsverfahren wird vereinfacht.

CRYSTAL OSCILLATOR PACKAGE

According to the present invention, a crystal oscillator package comprises: a crystal oscillator having an excitation electrode; at least one leg member extending from the crystal oscillator; and a conductive adhesive member configured to couple the leg member to a connection pad. The purpose of the present invention is to provide a crystal oscillator package capable of improving vibration reliability. COPYRIGHT KIPO 2016 ...

PIEZOELECTRIC COMPONENT

A piezoelectric component which suppress ripples in the range of oscillation frequency and achieves stabilization of oscillation frequency is provided. A piezoelectric component of the invention includes a support substrate; a piezoelectric element having an elongated shape, comprising excitation electrodes disposed on one principal surface and the other principal surface thereof, respectively, the excitation electrodes facing each other; a first support portion and a second support portion which are disposed between both ends in a longitudinal direction of the piezoelectric element and the support substrate; and an electrically conductive joining material which joins the first support portion and the second support portion to the ends of the piezoelectric element, respectively. A center of the piezoelectric element is offset with respect to an intermediate point between the first support portion and the second support portion as seen in a plan view of the piezoelectric component.

Piezoelectric device, manufacturing method therefor, and method for manufacturing piezoelectric oscillator

The invention provides a piezoelectric device having a structure which resists impact from the exterior and which can enhance electrical conductance between an electrode side of a package base and a piezoelectric resonator element. A piezoelectric device having a structure in which a piezoelectric resonator element is bonded to electrodes provided on a package base, includes underlying exposed electrodes as mounting electrodes which are provided on the package base and on which the piezoelectric resonator element is mounted; and gold-plated electrodes which are provided on the package base and to which a driving voltage is carried via conduction paths; in which the underlying exposed electrodes and the gold-plated electrodes are connected to each other with conductive adhesives provided therebetween, and the piezoelectric resonator element is bonded to the underlying exposed electrodes with silicone-based conductive adhesives provided therebetween.

Elektrisches Bauelement und Herstellungsverfahren

Es wird ein vorzugsweise oberflächenmontierbares elektrisches Bauelement mit empfindlichen Bauelementstrukturen vorgeschlagen, welches auf der Vorderseite zweiter Substrate realisiert ist. Die Substrate sind mit ihrer Vorderseite zueinanderweisend so miteinander verbunden, dass für die Bauelementstrukturen ein Hohlraum verbleibt. Die elektrischen Außenanschlüsse für alle Bauelementstrukturen sind auf der Oberfläche eines der beiden Substrate, insbesondere auf der Rückseite des oberen oder auf der Vorderseite des unteren Substrats vorgesehen. Zwischen den beiden Substraten ist eine geeignet strukturierte Zwischenschicht angeordnet, die sowohl als Abstandshalter als auch zur Abdichtung der Hohlraumgehäuse dient.

ELEKTRONISCHES BAUELEMENT, INSBESONDERE MIT AKUSTISCHEN OBERFLÄCHENWELLEN ARBEITENDES BAUELEMENT - OFW-BAUELEMENT

Estrutura eletrônica integrada

Crystal Oscillator Package

The piezoelectric component

Resonator element, resonator, and oscillator

A resonator element includes: at least one resonating arm extending, wherein the resonating arm has a mechanical resonance frequency which is higher than a thermal relaxation frequency thereof, the resonating arm has a groove portion, the groove portion includes a bottom portion, a first side surface that extends along the longitudinal direction of the resonating arm and comes into contact with the opened principal surface and the bottom portion, and a second side surface that faces the first side surface with the bottom portion disposed therebetween and comes into contact with the opened principal surface and the bottom portion, and the groove portion has a non-electrode region which extends from a part of the first side surface close to the bottom portion to a part of the second side surface close to the bottom portion and in which no electrode is provided.

Method of piezoelectric vibrating piece, wafer, piezoelectric vibrator, oscillator, electronic apparatus, and radio-controlled timepiece

The present invention provides a novel method of producing piezoelectric vibration pieces in which a plurality of piezoelectric vibration pieces are formed at once from a wafer, using a plurality of photoresist processes. The wafer is marked with wafer marks each unique to a different one of photoresist masks to prevent a wrong use of the photoresist masks during the photoresist processes.

Method for mounting a piezoelectric resonator in a case and packaged piezoelectric resonator

The invention concerns a method for mounting a piezoelectric resonator ( 40 ) inside a case ( 80 ) by ultrasonic bonding of the piezoelectric resonator to a base part of the case. The invention also concerns a small-sized packaged piezoelectric resonator, in which the piezoelectric resonator is ultrasonically bonded inside a base part of the package.

Mounting structure of electronic component and method of manufacturing electronic component

A mounting structure includes: an electronic component including: a functional element having a predetermined function; a first resin protrusion section having a surface covered by a covering film including a conductive section electrically connected to the functional element; and a second resin protrusion section that is disposed inside an area surrounded by the first resin protrusion section, and has adhesiveness at least on a surface of the second resin protrusion section, and a base member having a connection electrode and adapted to mount the electronic component. In the structure, the second resin protrusion section mounts the electronic component on the base member in a condition in which the conductive section of the covering film has conductive contact with the connection electrode due to elastic deformation of the first resin protrusion section.

Surface acoustic wave resonator, surface acoustic wave oscillator, and electronic apparatus

A surface acoustic wave resonator which can realize favorable frequency-temperature characteristics and suppress frequency variations is provided. The surface acoustic wave resonator includes a quartz crystal substrate with Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, and 42.79°≦|Ψ|≦49.57°), and an IDT that is provided on the quartz crystal substrate, includes a plurality of electrode fingers, and excites a stop band upper end mode surface acoustic wave, wherein inter-electrode finger grooves are provided between the electrode fingers in a plan view, and wherein if a line occupation rate of convex portions of the quartz crystal substrate disposed between the inter-electrode finger grooves is ηg, and a line occupation rate of the electrode fingers disposed on the convex portions is ηe, η g >η e and 0.59<η eff <0.73 are satisfied in a case where an effective line occupation rate ηeff of the IDT is an arithmetic mean of the line occupation rate ηg and the line occupation rate ηe.

Crystal oscillator and method for manufacturing the same

A crystal oscillator includes a cover, a crystal blank and an Integrated Circuit (IC) chip. The cover has a surface, a cavity formed in the surface, a plurality of conductive contacts and a conductive sealing ring. The conductive contacts are disposed on the surface, and the conductive sealing ring is disposed on the surface and surrounds the conductive contacts. The IC chip is connected to the conductive contacts and the conductive sealing ring, and forms a hermetic chamber with the cover and the conductive sealing ring. The crystal blank is located in the hermetic chamber, and is electrically connected to the IC chip. Furthermore, a method for manufacturing a crystal oscillator is also provided.

Anodic bonding apparatus, method of manufacturing package, piezoelectric vibrator, oscillator, electronic apparatus, and radio timepiece

An anodic bonding apparatus includes a first intermediate member that is disposed between an upper surface (an outer surface) of a lead substrate wafer and a first heater, has heat conductivity, and can be flexible; and a second intermediate member that is disposed between a lower surface (an outer surface) of a base substrate wafer and a second heater, has conductivity and heat conductivity, and can be flexible, wherein the first intermediate member is formed so that a central portion thereof bulges toward the base substrate wafer further than a periphery portion thereof, and the second intermediate member is formed so that a central portion thereof bulges toward the lead substrate wafer further than a periphery portion thereof, and, the first intermediate member and the second intermediate member are evenly deformed.

Spin chuck and apparatus having spin chuck for manufacturing piezoelectric resonator piece

A spin chuck rotating a substrate utilizing a centrifugal force while holding one surface of the substrate with a substrate holding section to apply a film material to another surface of the substrate. The substrate holding section includes a tapered peripheral part having a peripheral edge where a substrate holding surface and a back surface thereof are connected. The other surface of the substrate and the back surface of the substrate holding section smoothly continue with each other with the holding surface of the substrate holding section kept in contact with the other surface of the substrate.

Crystal Device

A surface-mount type crystal device is provided, having a rectangular crystal element including an excitation part and a frame surrounding the excitation part, wherein the frame has sides respectively along a first and a second directions intersected with each other; a rectangular base, bonded to a principal plane of the frame, having sides respectively along the first and the second directions; a rectangular lid, bonded to another principal plane of the frame, having sides respectively along the first and the second directions. A first and a second bonding materials, respectively corresponding to a thermal expansion coefficient in the first and the second directions of the crystal element, are respectively applied on the sides of the first and the second directions of each of the frame of a crystal material, the base and the lid. A second bonding material is different from the first bonding material.

Piezoelectric device and manufacturing method of piezoelectric device

A piezoelectric device, in which one of a first plate, a second plate, and an adhesive agent is colored for confirming a bonding status of the adhesive agent, and a manufacturing method thereof, are provided. A piezoelectric device includes a piezoelectric vibrating piece that vibrates by applying a voltage; a first plate and a second plate formed of glass and seal the piezoelectric vibrating piece; and an adhesive agent which bonds the first plate with the second plate, wherein one of the first plate, the second plate, and the adhesive agent is colored.

Sealed surface acoustic wave element package

An electronic component includes: a semiconductor substrate having a first surface and a second surface opposing to the first surface; a trans-substrate conductive plug that penetrates the semiconductor substrate from the first surface to the second surface; an electronic element provided in the vicinity of the first surface of the semiconductor; and a sealing member that seals the electronic element between the sealing member and the first surface, wherein the electronic element is electrically connected to the trans-substrate conductive plug.

Resonator device

A coaxial resonator device includes a substrate including a chip-and-wire circuit. A resonator is coupled to the substrate using a conductive epoxy. A system includes a resonator device. The resonator device includes a housing having one or more connectors, a resonator coupled to the housing a conductive epoxy, and a chip-and-wire circuit connecting the resonator to the one or more connectors.

Communications filter package for narrowband and wideband signal waveforms

A filter package for communications equipment includes two or more filters in die form, each having a different frequency response. A first switch and a second switch are operatively connected to the filters and are configured to select a desired filter for operation in a signal stage of the equipment. The filters are aligned and stacked one over the other in the form of a package having an input terminal that is tied to a common terminal of the first switch, and an output terminal tied to a common terminal of the second switch. When the input and the output terminals of the filter package are connected to corresponding terminals of an intermediate frequency (IF) stage in a communications transceiver, the package can support both narrowband and wideband waveforms defined by the Joint Tactical Radio System (JTRS).

Electronic component and production method thereof

A production method of an electronic component includes: forming a sheet having a resin layer and a metal layer formed under the resin layer; bonding the sheet to a substrate so that the metal layer is arranged on a functional portion of an acoustic wave element formed on the substrate, a frame portion surrounding the functional portion is formed between the metal layer and the substrate, a cavity is formed on the functional portion by the metal layer and the frame portion, and the resin layer covers the metal layer and the frame portion.

Piezoelectric vibrating device and method for manufacturing same

A piezoelectric device includes a piezoelectric vibrating plate, a first plate, a first glass sealing material disposed in a ring shape, and an electrically conductive adhesive. The piezoelectric vibrating plate includes a piezoelectric vibrating piece, a frame body, and a pair of extraction electrodes. The piezoelectric vibrating piece includes a pair of excitation electrodes. The frame body surrounds the piezoelectric vibrating piece. The frame body is formed integrally with the piezoelectric vibrating piece. The first glass sealing material encloses a periphery of the first main surface of the frame body so as to bond the first plate and the first main surface of the frame body together.

Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit

It is possible to reduce the size of a surface acoustic wave resonator by enhancing the Q value. In a surface acoustic wave resonator in which an IDT having electrode fingers for exciting surface acoustic waves is formed on a crystal substrate, a line occupying ratio is defined as a value obtained by dividing the width of one electrode finger by the distance between the center lines of the gaps between one electrode finger and the electrode fingers adjacent to both sides thereof, and the IDT includes a region formed by gradually changing the line occupying ratio from the center to both edges so that the frequency gradually becomes lower from the center to both edges than the frequency at the center of the IDT.

Saw device, saw oscillator, and electronic apparatus

A SAW device includes a SAW chip formed of a piezoelectric substrate and an IDT formed thereon, a base substrate that supports the SAW chip, and a fixing member that fixes the SAW chip to the base substrate. The SAW chip that forms a cantilever is supported by the base substrate via the fixing member in a position where the IDT does not overlap with the fixing member in a plan view of the SAW chip. The length W of the SAW chip in a y-axis direction and the length D of the fixing member in the y-axis direction satisfy 1<D/W1≦1.6. The fixing member bonds the lower surface and side surfaces of the fixed end of the SAW chip to the base substrate.

Piezoelectric vibration device and oscillator

A piezoelectric vibration device is provided that can reduce the stress and strain that transmit through a base substrate. The piezoelectric vibration device includes a piezoelectric vibrating reed that oscillates in an AT mode, and that includes excitation electrodes respectively formed on the front and back surfaces of the reed. One of the excitation electrodes is connected to the base substrate via a metal bump on a center line passing across the shorter sides of the piezoelectric vibrating reed and in the vicinity of one of the shorter sides of the piezoelectric vibrating reed. The other excitation electrode is connected to the base substrate via a metal bump on the same side as the above shorter side, and in the vicinity of a portion where the shorter side of the piezoelectric vibrating reed crosses one of the longer sides of the piezoelectric vibrating reed.

Surface acoustic wave device and production method therefor

A surface acoustic wave device includes a surface acoustic wave element including a plurality of electrode pads, and a mount substrate. The surface acoustic wave element is flip-chip mounted on a die-attach surface of the mount substrate by bumps made of Au. The mount substrate includes at least one resin layer including via-holes, a plurality of mount electrodes provided on the die-attach surface of the mount substrate, and via-hole conductors. The mount electrodes are bonded to the electrode pads via the bumps. The via-hole conductors are provided in the via-holes. At least one of each of the electrode pads and each of the mount electrodes includes a front layer made of Au. At least one of the via-hole conductors is located below the corresponding bump.

Acoustic wave device

An acoustic wave device includes: a multilayer structure that has plural surfaces which principal surfaces of plural layers provide; a chip including an acoustic wave filter and mounted on a first surface; a resin unit sealing the chip; a wiring pattern that is formed on a second surface and electrically connected to at least one of resonators; a ground pattern that is formed on the second surface along a part of the wiring pattern, and is away from the wiring pattern; and an external terminal that is formed on a third surface and electrically connected to the wiring pattern and the ground pattern, the third surface being disposed on an opposite side of the first surface with respect to the second surface; wherein a part of the wiring pattern that comes closest to the ground pattern is substantially formed in parallel with the ground pattern.

Method of manufacturing boundary acoustic wave device

A method of manufacturing a boundary acoustic wave device includes the steps of forming an electrode on a first medium layer, forming a second medium layer so as to cover the electrode on the first medium layer, and forming a sound absorbing layer on an external surface of the second medium layer. The sound absorbing layer has an acoustic velocity of transverse waves that is lower than an acoustic velocity of transverse waves of the second medium layer.

Circuit substrate

A circuit substrate includes: a laminate substrate in which a conductive layer and an insulating layer are laminated; a filter chip that has an acoustic wave filter and is provided inside of the laminate substrate; and an active component that is provided on a surface of the laminate substrate and is connected with the filter chip, at least a part of the active component overlapping with a projected region that is a region of the filter chip projected in a thickness direction of the laminate substrate.

Switchable filters and design structures

Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes.

Vibrator element, vibrator, oscillator, and electronic device

A vibrator element includes: a base having a mounting surface; a vibrating arm which is extended from the base and has a first surface and a second surface that faces the first surface and is positioned on the mounting surface side, and which performs flexural vibration in a direction normal to the first and second surfaces; and a laminated structure which is provided on at least one of the first and second surfaces of the vibrating arm, and which includes at least a first electrode, a second electrode, and a piezoelectric layer disposed between the first and second electrodes, in which the vibrating arm is warped toward the mounting surface side.

FLEXURAL VIBRATION ELEMENT AND ELECTRONIC COMPONENT

A flexural vibration element according to a first aspect of the invention includes: a vibration element body composed of a plurality of vibrating arms provided in parallel, a connecting part connecting the vibrating arms, and one central supporting arms extending between the vibrating arms from the connecting pert in parallel with the vibrating arms at equal distance from the arms and a frame body disposed outside the vibration element body. 1. A flexural vibration element comprises:a vibration element body composed of a plurality of vibrating arms provided in parallel, a connecting part connecting the vibrating arms, and one central supporting arm extending between the vibrating arms from the connecting part in parallel with the vibrating arms at equal distance from the arms; anda frame body disposed outside the vibration element body, the vibration element body being supported by the frame body at an end part, the end part being opposite to the connecting part, of the central supporting arm,the central supporting arm and the frame body being integrally formed as a single body such that a positional relationship between the central supporting arm and the frame body is fixed, wherein the frame body has a supporting part, at an interior side thereof, extending between a pair of side parts thereof, and the end part, opposite to the connecting part, of the central supporting arm is connected to the supporting part so as to support the vibration element body.2. The flexural vibration element according to claim 1 , wherein the supporting part has a groove formed on at least one of a front surface and a rear surface thereof claim 1 , and the groove is positioned in an area that is along the supporting part and in which compressive stress and tensile stress alternately occur at a vibration element body side of the supporting part and an opposite side to the vibration element body side due to flexural vibration of the vibrating arms.3. The flexural vibration element ...

Piezoelectric vibrating piece, piezoelectric vibrator, oscillator, electronic device, and radio-controlled timepiece

Mounting electrodes are formed in a state of being separated from excitation electrodes on one main surface of a base portion, and the excitation electrodes are formed on another main surface of a piezoelectric plate and includes base portion electrodes which are connected to the excitation electrodes and conducting portions which electrically connect the mounting electrodes and the base portion electrodes in a thickness direction of the piezoelectric plate.

CRYSTAL CONTROLLED OSCILLATOR

A crystal controlled oscillator includes a crystal package and an IC chip board that includes an IC chip integrating an oscillator circuit. The crystal package includes a first container, a crystal resonator, a lid body, and an external terminal at an outer bottom surface of the first bottom wall layer of the first container. The IC chip integrates an oscillator circuit disposed at an outer bottom surface of the first bottom wall layer of the crystal package. The oscillator circuit connects to the lower side excitation electrode of the crystal resonator from the external terminal to an input side with high impedance. The oscillator circuit connects to the upper side excitation electrode to an output side with low impedance. The upper side excitation electrode is a shielding electrode of the crystal resonator. 1. A crystal controlled oscillator , comprising:a crystal package with an insulating container that houses a crystal resonator; andan IC chip board that includes an IC chip integrating an oscillator circuit, the oscillator circuit being configured to generate an oscillation signal of a predetermined frequency based on a vibration signal of the crystal resonator, wherein a first container that includes a planar first bottom wall layer made of an insulating material and a first frame wall layer disposed at an end edge of the first bottom wall layer, the first frame wall layer forming a first depressed portion;', 'a crystal resonator housed in the first depressed portion along an inner surface of the first bottom wall layer;', 'a lid body secured to the first frame wall layer so as to hermetically seal the first depressed portion, the lid body being made of an insulating material only; and', 'an external terminal at an outer bottom surface of the first bottom wall layer of the first container, the external terminal being configured to output a vibration signal of the crystal resonator, wherein, 'the crystal package includesthe crystal resonator includes a crystal ...

Resonator element, resonator, electronic device, electronic apparatus, and mobile object

A resonator element includes a substrate vibrating in a thickness-shear vibration mode, a first excitation electrode disposed on one principal surface of the substrate, and has a shape obtained by cutting out four corners of a quadrangle, and a second excitation electrode disposed on the other principal surface of the substrate, and a ratio (S 2 /S 1 ) between the area S 1 of the quadrangle and the area S 2 of the first excitation electrode fulfills 87.7%≦(S 2 /S 1 )<95.0%.

Base substrate, electronic device, and method of manufacturing base substrate

Abase substrate includes an insulator board comprising through holes penetrating between two opposed principal surfaces, penetrating electrodes provided within the through holes, and intermediate layers sandwiched between inner surfaces of the through holes and the penetrating electrodes and having surfaces with smaller concavities and convexities than those of the inner surfaces at the penetrating electrode sides.

Piezoelectric vibrating piece and piezoelectric device

A piezoelectric vibrating piece includes a vibrator, a framing portion, and a connecting portion. The vibrator vibrates at a predetermined vibration frequency. The vibrator includes excitation electrodes on both principal surfaces. The vibrator is formed at a predetermined thickness. The framing portion surrounds a peripheral area of the vibrator. The connecting portion connects the vibrator and the framing portion. The vibrator has a side surface. At least a part of the side surface is formed into a taper shape such that a thickness of the vibrator becomes thin as close to an outer periphery of the vibrator. The piezoelectric vibrating piece further includes an extraction electrode extracted from each of the excitation electrodes to the framing portion via the connecting portions. One of the extraction electrodes is extracted from one principal surface to another principal surface via a taper-shaped side surface of the vibrator.

Semiconductor device, manufacturing method of the same, and mobile phone

A technique capable of maintaining the filter characteristics of a transmitting filter and a receiving filter by reducing the influences of heat from the power amplifier given to the transmitting filter and the receiving filter as small as possible in the case where the transmitting filter and the receiving filter are formed on the same semiconductor substrate together with the power amplifier in a mobile communication equipment typified by a mobile phone is provided. A high heat conductivity film HCF is provided on a passivation film PAS over the entire area of a semiconductor substrate 1 S including an area AR 1 on which an LDMOSFET is formed and an area AR 2 on which a thin-film piezoelectric bulk wave resonator BAW is formed. The heat mainly generated in the LDMOSFET is efficiently dissipated in all directions by the high heat conductivity film HCF formed on the surface of the semiconductor substrate 1 S.

Acoustic structure comprising at least one resonator and at least one cointegrated capacitor in one and the same piezoelectric or ferroelectric layer

An acoustic structure, comprising at least one acoustic resonator exhibiting at least one resonant frequency in a band of operating frequencies and an integrated capacitor, further comprises: a stack of layers, comprising at least one active layer of piezoelectric material or of ferroelectric material; the resonator being frequency tunable and being produced by a first subset of layers of the stack comprising the at least one active layer and at least two electrodes; the integrated capacitor being produced by a second subset of layers comprising the active layer and at least two electrodes; the first and second subsets of layers being distinguished by a modification of layers so as to exhibit different resonant frequencies.

CRYSTAL OSCILLATOR PACKAGE

A crystal oscillator package includes a crystal piece configured to vibrate in response to an electrical signal, a first vibrating part protruding from an upper surface of the crystal piece, a second vibrating part protruding from a lower surface of the crystal piece, a first exciting electrode disposed on the first vibrating part, a second exciting electrode disposed on the second vibrating part, and protrusions extending from an end portion of the lower surface of the crystal piece. The protrusions include two or more stages. 1. A crystal oscillator package comprising:a crystal piece configured to vibrate in response to an electrical signal;a first vibrating part protruding from an upper surface of the crystal piece;a second vibrating part protruding from a lower surface of the crystal piece;a first exciting electrode disposed on the first vibrating part;a second exciting electrode disposed on the second vibrating part; andprotrusions extending from an end portion of the lower surface of the crystal piece,wherein the protrusions comprise two or more stages.2. The crystal oscillator package of claim 1 , wherein a height of the protrusions is less than or equal to a height of the first and second vibrating parts.3. The crystal oscillator package of claim 1 , wherein the protrusions are formed by etching the crystal piece.4. The crystal oscillator package of claim 1 , further comprising first and second connection electrodes electrically connected to the first and second exciting electrodes to thereby connect to an external power supply claim 1 , wherein the first and second connection electrodes are disposed on outer surfaces of the protrusions.5. The crystal oscillator package of claim 1 , wherein the protrusions increase an adhesion area.6. The crystal oscillator package of claim 1 , wherein a height of the protrusions is greater than the height of the first and second vibrating parts.7. A crystal oscillator package comprising:a base substrate;a first electrode ...

WAVE SEPARATOR

A wave separator includes an n number (n being a natural number of 3 or larger) of band pass filters having an n number or larger of mutually different pass bands, and a common terminal. For a first of the band pass filters that is one of a band pass filter having a center frequency of a pass band at a lowest side and a band pass filter having a center frequency of a pass band at a highest side and that has a larger or equal difference in a center frequency of a pass band from an adjacent band pass filter as compared with the other band pass filter satisfies a predetermined configuration for a second band pass filter having a pass band adjacent to the first band pass filter. 1. A wave separator comprising:an n number of band pass filters including an n number or larger of mutually different pass bands where n is a natural number of 3 or larger; anda common terminal commonly provided for the n number of band pass filters; whereinamong the n number of band pass filters, for a first band pass filter that is one of a band pass filter having a center frequency of a pass band at a lowest side and a band pass filter having a center frequency of a pass band at a highest side and that has a larger or equal difference in a center frequency of a pass band from an adjacent band pass filter as compared with the other band pass filter, when f(1) is a center frequency of a pass band and B(1) is a susceptance value with the center frequency viewed from the common terminal; andamong the n number of band pass filters, for a second band pass filter having a pass band adjacent to the first band pass filter, when f(2) is a center frequency of a pass band and B(2) is a susceptance value with the center frequency viewed from the common terminal;the first band pass filter satisfies one of a configuration (i) and a configuration (ii) for the second band pass filter as follows:(i) B(2)×{2×f(2)−f(1)}/f(1) Подробнее

TUNING FORK AND ELECTRONIC DEVICE USING THE SAME

A tuning fork may include a vibrating part in which a plurality of vibrating members having vibrating heads which are formed at free ends of tines are connected at both sides of a connection member, and a support part in which the vibrating part is coupled with the connection member. The vibrating part may include two tines formed in parallel with each other and the connection member formed in a direction to the free end of the tines from fixed ends of the tines, being spaced apart from each other by a predetermined distance, and connecting between the two tines. 1. A tuning fork , comprising:a vibrating part comprising a plurality of vibrating members having vibrating heads which are formed at free ends of tines, the vibrating members connected at both sides of a connection member; anda support part coupled with the connection member.2. The tuning fork according to claim 1 , wherein the vibrating part includes:the parallel tines having the free ends and fixed ends; andthe connection member adjacently positioned to the fixed ends of the tines and connecting between the tines.3. The tuning fork according to claim 1 , wherein the vibrating part has an H shape.4. The tuning fork according to claim 1 , wherein the support part includes a base claim 1 , a central member connecting a central portion of the base to a central portion of the connection member claim 1 , and support arms formed at both ends of the base in parallel with the tines.5. The tuning fork according to claim 1 , wherein a distance from the fixed ends of the tines to the connection member is 0.02 to 0.2 times of a length of the vibrating members.6. The tuning fork according to claim 1 , wherein a width of the connection member is 0.5 to 1.5 times of a width of the tines.7. The tuning fork according to claim 1 , wherein a curved chamfer is formed between the connection member and the tines.8. The tuning fork according to claim 7 , wherein the chamfer is formed at an upper portion of the connection member ...

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, CIRCUIT SUBSTRATE, AND ELECTRONIC APPARATUS

A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side. 1. A device comprising:a semiconductor substrate including a first face and a second face on a side opposite to the first face;a foundation layer formed on the first face of the semiconductor substrate;a first electrode formed on the foundation layer;a second electrode formed on the foundation layer;an integrated circuit comprising at least two interconnected semiconductor devices, the at least two interconnected semiconductor devices formed on the first face of the semiconductor substrate, and the integrated circuit being electrically connected to the first electrode and the second electrode;a groove portion formed through the semiconductor substrate;an insulating film formed on a side wall of the groove portion;a conductive portion formed inside the groove portion on the insulating film and electrically connected to the second electrode;a first insulation layer formed on the foundation layer;a first interconnection formed on the first insulation layer, the first interconnection being electrically connected to the first electrode;a second insulation layer formed on the first interconnection and the first insulation layer;a second interconnection formed on the second insulation layer, the second interconnection being electrically connected to the first interconnection; anda third insulation layer formed on the second interconnection and the second insulation layer; ...

CRYSTAL RESONATOR PLATE AND CRYSTAL RESONATOR DEVICE

An AT-cut crystal resonator plate () includes a first main surface () on which a first excitation electrode () is formed and a second main surface () on which a second excitation electrode () is formed. The AT-cut crystal resonator plate () further includes: a substantially rectangular-shaped vibrating part () that is piezoelectrically vibrated when a voltage is applied to the first excitation electrode () and the second excitation electrode (); a holding part () protruding from a corner part () of the vibrating part () in a Z′ axis direction of the AT-cut crystal; and an external frame part () configured to surround an external circumference of the vibrating part () and to hold the holding part (). 1. An AT-cut crystal resonator plate including a first main surface on which a first excitation electrode is formed and a second main surface on which a second excitation electrode is formed , comprising: a holding part protruding from a corner part of the vibrating part in a Z′ axis direction of the AT-cut crystal so as to hold the vibrating part; and', 'an external frame part configured to surround an external circumference of the vibrating part and to hold the holding part., 'a substantially rectangular-shaped vibrating part having the first excitation electrode and the second excitation electrode;'}2. The crystal resonator plate according to claim 1 ,wherein the first excitation electrode and the second excitation electrode are each formed at a position spaced apart from a region on an extended line of the holding part in the Z′ axis direction toward a central direction of the vibrating part.3. The crystal resonator plate according to claim 1 ,wherein the holding part is protruded toward the external frame part from each of two corner parts disposed in the vibrating part in the Z′ axis direction.4. The crystal resonator plate according to claim 1 ,wherein the holding part is protruded toward the external frame part from one corner part disposed in the vibrating part. ...

RESONATOR AND RESONANCE DEVICE

A resonance device includes a resonator, an upper lid, and a lower lid. The resonator includes a vibration portion, a frame, and holding arms. The vibration portion includes a base and a plurality of vibration arms. The lower lid has a protruding portion protruding between two adjacent vibration arms, the protruding portion has an insulating film, the vibration arms have a weight portion that has a conductive film formed on the insulating film, and in a direction in which the plurality of vibration arms extend, a first distance between the weight portion of any one of the two adjacent vibration arms and the holding portion is less than a second distance between the weight portion and the protruding portion. 1. A resonance device , comprising: a vibration portion that includes a base and a plurality of vibration arms extending therefrom and having a fixed end connected to the base and an open end that opposes the fixed end, wherein the base and the plurality of vibration arms have a lower electrode and an upper electrode that face each other with a piezoelectric film interposed therebetween and an insulating film that covers the upper electrode,', 'a frame that extends at least on a side of the open end of the plurality of vibration arms, and', 'a holding arm that connects the vibration portion to the frame;, 'a resonator includingan upper lid that faces the upper electrode of the resonator; anda lower lid that faces the lower electrode of the resonator,wherein the lower lid has a protruding portion that has an insulating film and that protrudes between two vibration arms of the plurality of vibration arms,wherein each of the vibration arms has a weight disposed on a side of the open end, with the weight having a width that is larger than other portions of the vibration arm, and the weight including a conductive film disposed on the insulating film of the respective vibration arm, andwherein, in a plan view of a surface of the lower lid and in a direction in which ...

Frequency adjustment method of vibrator element, vibrator element, vibrator, electronic device, and vehicle

A frequency adjustment method of a vibrator element includes preparing a vibrator element that has a vibrating arm, a first weight placed on one principal surface of the vibrating arm, and a second weight placed on the other principal surface of the vibrating arm, in which the first weight has a non-overlapping region which does not overlap the second weight in a plan view in a normal direction of the principal surface, preparing a substrate including a wiring portion, and fixing the vibrator element to the substrate by causing the other principal surface side of the vibrator element to face the substrate side, and irradiating the non-overlapping region of the first weight with an energy ray from one principal surface side, removing a portion of the non-overlapping region of the first weight, and adjusting a resonance frequency of the vibrating arm.

Resonator Device, Electronic Apparatus, And Vehicle

A resonator device includes first and second resonators and an integrated circuit device. The integrated circuit device includes a first oscillation circuit configured to oscillate the first resonator, a second oscillation circuit configured to oscillate the second resonator, and a processing circuit configured to perform processing by using frequency difference information or frequency comparison information between a first clock signal generated by oscillating the first resonator and a second clock signal generated by oscillating the second resonator. The first resonator is supported on the integrated circuit device by a first support portion. The second resonator is supported on the integrated circuit device by a second support portion.

BONDED BODIES AND ACOUSTIC WAVE DEVICES

An object is to improve insulation in a bonding layer and to improve a bonding strength of a supporting body and piezoelectric single crystal substrate, in a bonded body having the supporting body made of a polycrystalline material or single crystal material, the piezoelectric single crystal substrate and the bonding layer provided between the supporting body and piezoelectric single crystal substrate. 1. A bonded body comprising:a supporting body comprising a polycrystalline ceramic material or a single crystal material;a piezoelectric single crystal substrate; and{'sub': (1-x)', 'x, 'a bonding layer provided between said supporting body and said piezoelectric single crystal substrate, said bonding layer having a composition of SiO(0.008≤x≤0.408).'}2. The bonded body of claim 1 , wherein said bonding layer has an electrical resistivity of 4.9×10Ω·cm or higher.3. The bonded body of claim 1 , wherein a surface of said bonding layer and a surface of said piezoelectric single crystal substrate are bonded by direct bonding.4. The bonded body of claim 1 , wherein a surface of said supporting body and said bonding layer is bonded by direct bonding.5. The bonded body of claim 1 , wherein said supporting body comprises a material selected from the group consisting of silicon claim 1 , sapphire claim 1 , mullite claim 1 , cordierite claim 1 , translucent alumina and sialon.6. The bonded body of claim 1 , wherein said piezoelectric single crystal substrate comprises lithium niobate claim 1 , lithium tantalate or lithium niobate-lithium tantalate solid solution.7. An acoustic wave device comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'said bonded body of ; and'}an electrode provided on said piezoelectric single crystal substrate. This is a continuation of International Application No. PCT/JP2018/011256, filed Mar. 22, 2018, which claims priority of Japanese Patent Application No. 2017-070219, filed Mar. 31, 2017, the entire contents of which are incorporated ...

GALLIUM NITRIDE STRUCTURE, PIEZOELECTRIC ELEMENT, METHOD OF MANUFACTURING PIEZOELECTRIC ELEMENT, AND RESONATOR USING PIEZOELECTRIC ELEMENT

A gallium nitride structure that includes: a substrate; a gallium nitride layer opposed to the substrate and containing gallium nitride as a main component thereof; and a first electrode between the gallium nitride layer and the substrate. The first electrode includes at least one hafnium layer containing a single metal of hafnium as a main component thereof, and the at least one hafnium layer is in contact with the gallium nitride layer. 1. A gallium nitride structure , comprising:a substrate;a gallium nitride layer provided so as to be opposed to the substrate and containing gallium nitride as a main component; anda first electrode that is provided between the gallium nitride layer and the substrate, the first electrode including at least one hafnium layer containing hafnium as a main component thereof the at least one hafnium layer in contact with the gallium nitride layer.2. The gallium nitride structure according to claim 1 , wherein the at least one hafnium layer includes:a first hafnium layer that is in contact with the substrate;a second hafnium layer that is in contact with the gallium nitride layer; anda metal layer having a resistivity lower than hafnium between the first hafnium layer and the second hafnium layer.3. The gallium nitride structure according to claim 2 , wherein the metal layer is an aluminum layer containing aluminum as a main component thereof.4. The gallium nitride structure according to claim 2 , further comprising a second electrode opposed to the first electrode with the gallium nitride layer therebetween.5. The gallium nitride structure according to claim 1 , further comprising a second electrode opposed to the first electrode with the gallium nitride layer therebetween.6. The gallium nitride structure according to claim 1 , wherein the substrate comprises a degenerated n-type Si.7. A resonator comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a vibration portion comprising the gallium nitride structure according to ;'}a ...

PIEZOELECTRIC THIN FILM RESONATOR, FILTER, AND MULTIPLEXER

A piezoelectric thin film resonator includes: a substrate; a lower electrode located on the substrate through an air gap; a piezoelectric film located so as to have a resonance region where the lower electrode and an upper electrode face each other across the piezoelectric film and having a lower piezoelectric film and an upper piezoelectric film, in an extraction region where the lower electrode is extracted from the resonance region, a lower end of a first end face of the lower piezoelectric film being substantially aligned with or located further out than an outer periphery of the air gap, a second end face of the upper piezoelectric film being inclined, an upper end of the second end face being substantially aligned with or located further in than the outer periphery, the lower piezoelectric film having a substantially uniform film thickness between the first end face and the second end face. 1. A piezoelectric thin film resonator comprising:a substrate;a lower electrode that is located on the substrate through an air gap;an upper electrode located on the lower electrode;a piezoelectric film that is located so as to have a resonance region where the lower electrode and the upper electrode face each other across at least a part of the piezoelectric film, and has a lower piezoelectric film located on the lower electrode and an upper piezoelectric film located between the lower piezoelectric film and the upper electrode, in an extraction region where the lower electrode is extracted from the resonance region, a lower end of a first end face of the lower piezoelectric film being substantially aligned with or located further out than an outer periphery of the air gap, a second end face of the upper piezoelectric film being inclined so that the upper piezoelectric film widens at smaller distances to the lower electrode, an upper end of the second end face being substantially aligned with or located further in than the outer periphery of the air gap, the lower ...

WLP BAW DEVICE WITH THROUGH-WLP VIAS

The present disclosure relates to a wafer-level packaged (WLP) bulk acoustic wave (BAW) device, which includes a BAW resonator, a WLP enclosure, and an interconnect. The BAW resonator includes a piezoelectric layer with an opening, a bottom electrode lead underneath the opening, and an interface structure extending over the opening and in contact with the bottom electrode lead through the opening. The WLP enclosure includes a cap, an outer wall that extends from the cap toward the piezoelectric layer to form a cavity, and a through-WLP via that extends through the cap and the outer wall and is vertically aligned with the opening of the piezoelectric layer. A portion of the interface structure is exposed to the through-WLP via. The interconnect is formed in the through-WLP via and electrically connected to the interface structure. 1. An apparatus comprising:a piezoelectric layer with a first interface opening;a bottom electrode over a bottom surface of the piezoelectric layer;a bottom electrode lead over the bottom surface of the piezoelectric layer and extending from the bottom electrode, wherein a portion of the bottom electrode lead is exposed through the first interface opening of the piezoelectric layer;a first interface structure extending over the first interface opening and in contact with the exposed portion of the bottom electrode lead; the top surface of the piezoelectric layer is opposite the bottom surface of the piezoelectric layer; and', 'an active region for a resonator is formed where the bottom electrode and the top electrode overlap; and, 'a top electrode over a top surface of the piezoelectric layer, wherein the outer wall extends from the WLP cap toward the top surface of the piezoelectric layer to form a cavity, and the top electrode resides in the cavity;', 'the first through-WLP via extends vertically through the WLP cap and the outer wall, and is encompassed by the outer wall; and', 'the first through-WLP via of the WLP enclosure is ...

Resonance device

A resonance device is provided that includes a resonator having a base, a vibrating arm extending from one end of the base along a first direction, a frame disposed around at least a part of the vibrating arm and holding the vibrating arm such that the vibrating arm is configured to vibrate, and a support arm connecting the base to the frame. Moreover, a first substrate is provided that includes a first recess forming at least a part of a vibration space for the resonator and a first limiting portion provided away from the support arm by a first distance in a thickness direction, in which the first distance is smaller than a distance between a bottom surface of the first recess and the vibrating arm in the thickness direction of the first substrate.

Electrode defined resonator

A bulk acoustic resonator operable in a bulk acoustic mode includes a resonator body mounted to a separate carrier that is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and a top conductive layer on the piezoelectric layer opposite the device layer. A surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to the carrier.

DEVICES AND METHODS RELATED TO STACKED DUPLEXERS

Devices and method related to stacked duplexers. In some embodiments, an assembly may include a first wafer-level packaging (WLP) device having a radio-frequency (RF) shield. The assembly may also include a second WLP device having an RF shield, the second WLP device positioned over the first WLP device such that the RF shield of the second WLP device is electrically connected to the RF shield of the first WLP device. 1. An assembly comprising:a first wafer-level packaging (WLP) device having a radio-frequency (RF) shield; anda second WLP device having an RF shield, the second WLP device positioned over the first WLP device such that the RF shield of the second WLP device is electrically connected to the RF shield of the first WLP device.2. The assembly of wherein the first WLP device includes a first RF filter claim 1 , and the second WLP device includes a second RF filter.3. The assembly of wherein each of the first and second RF filters includes a grounding contact pad claim 2 , at least one input contact pad claim 2 , and at least one output contact pad.4. The assembly of wherein the RF shield of each of the first and second RF filters includes a conformal coating of conductive material.5. The assembly of wherein the conformal coating of each RF filter is electrically connected to the corresponding grounding contact pad.6. The assembly of wherein the second RF filter is in an inverted orientation such that the conformal coating of the RF second filter is in electrical contact with the conformal coating of the first RF filter.7. The assembly of wherein the conformal coating of the second RF filter is electrically connectable to an external ground node through the grounding contact pad of the first RF filter.8. The assembly of wherein the first RF filter has a first lateral dimension and the second RF filter has a second lateral dimension that is greater than the first lateral dimension such that each of a plurality of edges of the second RF filter forms an ...

Piezoelectric vibrating piece, method for fabricating piezoelectric vibrating piece, piezoelectric device, and method for fabricating piezoelectric device

A piezoelectric vibrating piece includes a vibrating portion, a framing portion, and a connecting portion. The framing portion surrounds the vibrating portion. The connecting portion connects the vibrating portion and the framing portion. The connecting portion includes an inclined surface disposed on at least one of a front surface and a back surface of the connecting portion. A boundary between the inclined surface and a flat surface is established in a middle region that is away from a connecting region of the connecting portion and the vibrating portion, and is away from a connecting region of the connecting portion and the framing portion.

ACOUSTIC RESONATOR AND METHOD FOR MANUFACTURING THE SAME

An acoustic resonator includes a substrate, a center portion, an extending portion, and a barrier layer. A first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate in the central portion. The extending portion is configured to extend from the center portion, and includes an insertion layer disposed below the piezoelectric layer. The barrier layer is disposed between the first electrode and the piezoelectric layer. 1. An acoustic resonator comprising:a substrate;a center portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate;an extending portion extending from the center portion, and comprising an insertion layer disposed below the piezoelectric layer; anda barrier layer disposed between the first electrode and the piezoelectric layer.2. The acoustic resonator of claim 1 , wherein the barrier layer is disposed between the first electrode and the insertion layer in the extending portion.3. The acoustic resonator of claim 1 , wherein the barrier layer is formed of a dielectric having a hexagonal close-packed (HCP) structure or a metal.4. The acoustic resonator of claim 3 , wherein the barrier layer is formed of titanium (Ti).5. The acoustic resonator of claim 4 , wherein the first electrode is formed of a conductive material including any one of molybdenum (Mo) claim 4 , ruthenium (Ru) claim 4 , iridium (Ir) claim 4 , aluminum (Al) claim 4 , platinum (Pt) claim 4 , tungsten (W) claim 4 , a combination of any two or more of thereof claim 4 , or alloys including at least one thereof claim 4 , andthe piezoelectric layer is formed of aluminum nitride (AlN).6. The acoustic resonator of claim 3 , wherein the barrier layer is formed of aluminum nitride (AlN).7. The acoustic resonator of claim 3 , wherein the barrier layer and the piezoelectric layer are formed of a same material.8. The acoustic resonator of claim 1 , wherein the barrier layer has a thickness ...

SURFACE ACOUSTIC WAVE DEVICE AND METHOD OF MANUFACTURING THE SAME

A surface acoustic wave device includes a piezoelectric substrate, a supportive layer, a cover layer and a pillar bump. The supportive layer is disposed on the piezoelectric substrate and around a transducer, the cover layer covers the supportive layer, and the pillar bump is located in a lower via hole of the supportive layer and an upper via hole of the cover layer. The upper via hole has a lateral opening located on a lateral surface of the cover layer, and the pillar bump in the cover layer protrudes from the lateral surface of the cover layer via the lateral opening. 1. A surface acoustic wave device comprising:a piezoelectric substrate including a base, a conductive pad and a transducer, the conductive pad and the transducer are disposed on the base and electrically connected with each other;a supportive layer disposed on the piezoelectric substrate and surrounding the transducer, a lower via hole and an opening hole are formed in the supportive layer, the lower via hole is located outside the opening hole and exposes the conductive pad, and the opening hole is located above the transducer;a cover layer disposed on the supportive layer and covering the opening hole, an upper via hole is formed in the cover layer, located above the lower via hole and communicated to the lower via hole, wherein the upper via hole has a first top opening, a first bottom opening and a first lateral opening, the first top opening is located on a top surface of the cover layer, the first bottom opening is located on a bottom surface of the cover layer, the first lateral opening is located on a lateral surface of the cover layer, and both ends of the first lateral opening are connected to the first up opening and the first bottom opening, respectively; anda pillar bump disposed in the lower via hole and the upper via hole and connected to the conductive pad, wherein the pillar bump in the cover layer includes a first part and a second part, the first part is located in the upper via ...

SYSTEMS AND METHODS FOR SAW WAFER LEVEL ASSEMBLY WITH TOP SIDE CONTACTS

A wafer level assembly is disclosed. The wafer level assembly includes a device wafer, and a plurality of electrodes disposed on the device wafer, wherein the device wafer the plurality of electrodes form a surface acoustic wave (SAW) device, a plurality of device pads disposed on the device wafer, wherein each of the plurality of electrodes are coupled to one of the device pads, a cap wafer coupled to the device wafer through a seal layer, the cap wafer having a plurality of contact pads and a plurality of interconnect pads integral with a surface of the cap wafer, wherein each of the plurality of contact pads is coupled to one of the plurality of interconnect pads, and a plurality of conductive interconnects, wherein each of the plurality of conductive interconnects is coupled between one of the plurality of device pads and one of the plurality of interconnect pads. 1. A device assembly comprising:a device wafer;a plurality of electrodes disposed on said device wafer, wherein said device wafer and said plurality of electrodes form a surface acoustic wave (SAW) device;a plurality of device pads disposed on said device wafer, wherein each of said plurality of electrodes are electrically coupled to at least one of said device pads;a cap wafer coupled to said device wafer through a seal layer, said cap wafer having a plurality of contact pads and a plurality of interconnect pads integral with a surface of said cap wafer, wherein each of said plurality of contact pads is electrically coupled to one of said plurality of interconnect pads; anda plurality of conductive interconnects, wherein each of said plurality of conductive interconnects is electrically coupled between one of said plurality of device pads and one of said plurality of interconnect pads.2. The device assembly of claim 1 , wherein each of said plurality of conductive interconnects comprises a wirebond.3. The device assembly of claim 1 , further comprising a coating covering at least a portion of said ...

ACOUSTIC WAVE DEVICE

An acoustic wave device includes a functional electrode provided on a first main surface of a substrate, and a support provided on the substrate and surrounding a portion where the functional electrode is provided. A cover closes an opening of the support. The cover includes a resin layer and a metal layer that is integrated with the resin layer. The metal layer includes a first metal layer and a second metal layer, the first metal layer having a larger planar area than the second metal layer. The Young's modulus of the metal defining the second metal layer is higher than the Young's modulus of the metal defining the first metal layer. In a plan view, the first metal layer covers a hollow portion from above and the second metal layer discontinuously covers the hollow portion from above. 1. An acoustic wave device comprising:a substrate including a first main surface, a second main surface that faces the first main surface, and a piezoelectric layer at the first main surface side thereof;a functional electrode provided on the piezoelectric layer;a support provided on the substrate and surrounding a portion where the functional electrode is provided; anda cover that closes an opening of the support; whereina hollow portion is defined by the substrate, the support, and the cover;the cover includes a resin layer and a metal layer that is integrated with the resin layer;the metal layer includes a first metal layer and a second metal layer, the first metal layer having a larger planar area than the second metal layer;a Young's modulus of a metal defining the second metal layer is higher than a Young's modulus of a metal defining the first metal layer;in a plan view, the first metal layer covers the hollow portion from above; andthe second metal layer discontinuously covers the hollow portion from above.2. The acoustic wave device according to claim 1 , wherein the first metal layer is made of Cu and the second metal layer is made of Ni.3. The acoustic wave device ...

Vibrating Element, Vibrator, Electronic Device, And Vehicle

A vibrating element includes a base and a first vibrating arm and a second vibrating arm extending from the base. The first vibrating arm includes a first arm and a first weight. The second vibrating arm includes a second arm and a second weight. In the vibrating element, 0.952<M2/M1<1.000, wherein M1 is mass on the second vibrating arm side of the first weight with respect to a first center line of the first arm and mass on the first vibrating arm side of the second weight with respect to a second center line of the second arm and M2 is mass on a side opposite to the second vibrating arm of the first weight with respect to the first center line and mass on a side opposite to the first vibrating arm of the second weight with respect to the second center line.

WLP BAW DEVICE WITH OXIDE ADHESION LAYER

The present disclosure relates to a wafer-level packaged (WLP) bulk acoustic wave (BAW) device, which includes a BAW resonator and a WLP enclosure. The BAW resonator includes a piezoelectric layer with an interface opening, a bottom electrode lead underneath the interface opening, an interface structure extending over the interface opening and connected with the bottom electrode lead, a passivation layer with a passivation opening over the interface structure, and an oxide adhesion layer with an adhesion opening over the passivation layer. The WLP enclosure includes an outer wall directly residing over the oxide adhesion layer, and a through-WLP via encompassed by the outer wall and vertically aligned with the adhesion opening and the passivation opening. A portion of the interface structure is exposed to the through-WLP via through the adhesion opening and the passivation opening. 1. An apparatus comprising:a piezoelectric layer with a first interface opening;a first interface structure extending over the first interface opening;a wafer-level-packaged (WLP) enclosure comprising an outer wall and a first through-WLP via, wherein the first through-WLP via is encompassed by the outer wall;a passivation layer, which is formed of Silicon Nitride (SiN), directly over a portion of a top surface of the piezoelectric layer and having a first passivation opening over the first interface structure; and the first through-WLP via, the first adhesion opening, and the first passivation opening are vertically aligned, such that at least a portion of the first interface structure is exposed to the first through-WLP via through the first passivation opening and the first adhesion opening; and', 'the outer wall is confined within the oxide adhesion layer, such that a bottom surface of the outer wall is in contact with the oxide adhesion layer., 'an oxide adhesion layer directly over at least a portion of the passivation layer and having a first adhesion opening, wherein2. The ...

FILTER DEVICE AND METHOD FOR MANUFACTURING THE SAME

A filter device includes a piezoelectric substrate, first and second functional elements provided on a surface of the piezoelectric substrate, a first conductive layer provided on the surface of the piezoelectric substrate, the first conductive layer connecting the first and second functional elements to each other, an insulating layer provided at least on the first conductive layer, a cover that faces the surface of the piezoelectric substrate, a support layer located between the surface of the piezoelectric substrate and the cover, the support layer defining hollow portions, in which the first and second functional elements are provided, between the piezoelectric substrate and the cover, and a first conductor that connects the insulating layer to the cover. 1. A filter device comprising:a piezoelectric substrate;first and second functional elements provided on a surface of the piezoelectric substrate;a first conductive layer provided on the surface of the piezoelectric substrate, the first conductive layer electrically connecting the first and second functional elements to each other;an insulating layer provided at least on the first conductive layer;a cover that faces the surface of the piezoelectric substrate;a support layer located between the surface of the piezoelectric substrate and the cover, the support layer defining hollow portions, in which the first and second functional elements are provided, between the piezoelectric substrate and the cover; anda first conductor that connects the insulating layer to the cover.2. The filter device according to claim 1 , whereinthe support layer is provided on the insulating layer; andthe first conductor is a first via conductor that extends through the cover and the support layer and that is in contact with the insulating layer.3. The filter device according to claim 2 , wherein the first via conductor overlaps the first conductive layer in plan view viewed in a thickness direction of the piezoelectric substrate.4. ...

Connection substrate

A through conductor 11 provided in a through hole of a ceramic substrate includes a metal porous body 20 , glass phases 17 and 19 formed in pores 16 A to 16 D of the metal porous body 20 and spaces 30 and 31 in the pores. A ratio of an area of the pores is 5 to 50 percent in a cross section of the through conductor 11 . It is provided that the through conductor 11 is separated into a first part 11 A on a side of the first main surface 11 a and a second part 11 B on a side of the second main surface 11 b in a direction B of thickness of the ceramic substrate, a ratio of an area of glass phases occupying the pores in the first part 11 A is higher than a ratio of an area of glass phases occupying the pores in the second part 11 B. A ratio of an area of spaces occupying the pores in the first part 11 A is lower than a ratio of an area of the pores occupying the pores in the second part 11 B.

ACOUSTIC WAVE FILTER, DUPLEXER, AND MODULE

An acoustic wave filter includes: series resonators connected in series; and one or more parallel resonators connected in parallel, wherein at least two series resonators and a parallel resonator therebetween are divided into a first divided resonator, which includes a piezoelectric substance sandwiched between a pair of electrodes in a c-axis orientation direction, and a second divided resonator, which includes another piezoelectric substance sandwiched between another pair of electrodes so that the another pair of electrodes in the c-axis orientation direction has an electric potential opposite to that of the electrodes of the first divided resonator in the c-axis orientation direction, a first group including the first divided resonators and a second group including the second divided resonators are interconnected in parallel between two nodes, and the first divided resonators and the second divided resonators of the at least two series resonators are not electrically interconnected at the two nodes. 1. An acoustic wave filter comprising:two or more series resonators connected in series between an input terminal and an output terminal and formed of a piezoelectric thin film resonator; andone or more parallel resonators connected in parallel between the input terminal and the output terminal and formed of a piezoelectric thin film resonator,wherein each of at least two series resonators and a parallel resonator between the at least two series resonators among the two or more series resonators and the one or more parallel resonators is divided into a first divided resonator and a second divided resonator, the first divided resonator including a piezoelectric substance sandwiched between a pair of electrodes in a direction of a c-axis orientation or a polarization axis of the piezoelectric substance, the second divided resonator including another piezoelectric substance sandwiched between another pair of electrodes so that the another pair of electrodes located in ...

WAFER SCALE PACKAGING

A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor substrate comprising a plurality of single crystal acoustic resonator devices, each having a first electrode member, a second electrode member, and an overlying passivation material. At least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, an under metal material overlying the repassivation material. Copper pillar interconnect structures are then configured overlying the electrode members, and solder bump structures are form overlying the copper pillar interconnect structures. 119-. (canceled)20. A method of wafer scale packaging Group III-Nitride containing devices , the method comprising:providing a substrate member having a surface region;forming a thickness of Group III-Nitride material overlying the surface region;forming an insulating material overlying a portion of the thickness of Group III-Nitride material;forming a contact region to expose a portion of the thickness of the Group III-Nitride material; andforming a pillar structure comprising a copper material within the contact region.21. The method of further comprising forming a thickness of solder material overlying the pillar structure to cause formation of a solder bump; andbonding the solder bump to a contact member on a substrate structure.22. The method of wherein the Group III-Nitride material is deposited by LPCVD; andfurther comprising using dichlorosilane (DCS), provided with or without Ammonia, to clean and prepare a surface for single crystal growth.23. The method of wherein the Group III-Nitride material is selected from at least one of a single crystal oxide including a high K dielectric claim 20 , ZnO claim 20 , or MgO.24. The method of wherein the Group III-Nitride material is characterized by X-ray diffraction with clear peak at a detector angle (2-θ) ...

FILM BULK ACOUSTIC RESONATOR PACKAGE WITH THIN FILM SEALING STRUCTURE AND MANUFACTURING METHOD THEREFOR

A method for manufacturing a film bulk acoustic resonator (FBAR) package with a thin film sealing structure includes: forming an FBAR having a bottom electrode, a piezoelectric layer, and a top electrode on a substrate; forming a plurality of inner pad electrodes electrically connected to the top electrode and the bottom electrode of the FBAR; attaching a PR (photo-resist) film to tops of the inner pad electrodes; etching the PR film to expose the inner pad electrodes to the outside; and forming a sealing layer on top of the PR film and tops of the exposed inner pad electrodes. 1. A method for manufacturing a film bulk acoustic resonator (FBAR) package with a thin film sealing structure , the method comprising the steps of:forming an FBAR having a bottom electrode, a piezoelectric layer, and a top electrode on a substrate;forming a plurality of inner pad electrodes electrically connected to the top electrode and the bottom electrode of the FBAR;attaching a PR (photo-resist) film to tops of the inner pad electrodes;etching the PR film to expose the inner pad electrodes to the outside; andforming a sealing layer on top of the PR film and tops of the exposed inner pad electrodes.2. The method according to claim 1 , further comprising the step of etching the sealing layer disposed on the inner pad electrodes to form vias through which the inner pad electrodes are exposed to the outside again.3. The method according to claim 2 , further comprising the step of forming insulating layers on the inner peripheral surfaces of the vias.4. The method according to claim 2 , further comprising the step of forming outer pad electrodes on top of the sealing layer in such a manner as to be connected to the inner pad electrodes through the vias.5. The method according to claim 1 , further comprising the step of forming an air cavity on the substrate before the FBAR is formed.6. The method according to claim 1 , wherein the step of forming the sealing layer comprises the step of ...

Saw-based electronic elements and filter devices

Aspects and examples provide electronic elements and filter devices configured to prevent deterioration of the propagation characteristics caused by input and output signals being electromagnetically coupled to an electric conductor side wall. In one example an electronic filter includes an element substrate having a top surface, a bottom surface, a side surface, and piezoelectric body. A circuit including a plurality of SAW resonators is formed on the top surface of the element substrate. The electronic filter further includes a sealing substrate having a top surface and a bottom surface, and a side wall including an electric conductor and formed to define a cavity between the top surface of the element substrate and the bottom surface of the sealing substrate, the side wall enclosing a periphery of the circuit and being connected to a ground potential of the circuit.

Ladder surface acoustic wave filter

A ladder surface acoustic wave filter includes a series arm connecting an input terminal and an output terminal, at least one parallel arm connecting the series arm and a ground terminal, at least one series arm resonator provided in the series arm, and at least two parallel arm resonators provided in at least one parallel arm and connected to each other in series. In the ladder surface acoustic wave filter, a connection point between at least the two parallel resonators connected to each other in series is grounded through an inductor.

STRUCTURE AND METHOD OF MANUFACTURE FOR ACOUSTIC RESONATOR OR FILTER DEVICES USING IMPROVED FABRICATION CONDITIONS AND PERIMETER STRUCTURE MODIFICATIONS

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics. 1. A method for fabricating an acoustic resonator or filter device , the method comprising:providing a substrate having a substrate surface region and a substrate backside cavity region;forming a piezoelectric layer overlying the substrate surface region, the piezoelectric layer having a top piezoelectric surface region and a bottom piezoelectric surface region;forming a topside metal electrode overlying the top piezoelectric surface region;forming a topside micro-trench within a portion of the piezoelectric layer;forming a backside metal electrode underlying or in proximity of the bottom piezoelectric surface region within the substrate backside cavity region, the backside metal electrode being electrically coupled to a micro-via configured within the topside micro-trench; andremoving a portion of the piezoelectric layer to form a first topside groove on the top piezoelectric surface region.2. The method of wherein the piezoelectric layer comprises an essentially single crystal material or a ...

STRUCTURE AND METHOD OF MANUFACTURE FOR ACOUSTIC RESONATOR OR FILTER DEVICES USING IMPROVED FABRICATION CONDITIONS AND PERIMETER STRUCTURE MODIFICATIONS

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics. 1. A method for fabricating an acoustic resonator device , the method comprising:providing a substrate having a substrate surface region and a substrate backside cavity region characterized by a cavity geometric area;forming a piezoelectric layer overlying the substrate surface region, the piezoelectric layer having a top piezoelectric surface region and a bottom piezoelectric surface region;forming a topside energy confinement structure overlying the top piezoelectric surface region, the topside energy confinement structure being characterized by a topside structure geometric area and a topside structure perimeter, the topside energy confinement structure having at least one portion removed forming a topside structure break region;forming a topside metal electrode overlying the top piezoelectric surface region and within the topside energy confinement structure, the topside metal electrode being characterized by a topside electrode geometric area; andforming a topside sandbar structure overlying the top ...

5.2 GHz Wi-Fi COEXISTENCE ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators. 1. An RF filter circuit device , the device comprising:an input port;a first node coupled to the input port; a first capacitor device, the first capacitor device comprising a first substrate member, the first substrate member having a first cavity region and a first upper surface region contiguous with a first opening of the first cavity region,', 'a first bottom electrode within a portion of the first cavity region,', 'a first piezoelectric material overlying the first upper surface region and the first bottom electrode,', 'a first top electrode overlying the first single crystal material and overlying the first bottom electrode, and', 'a first insulating material overlying the first top electrode and configured with a first thickness to tune the first resonator;, 'a first resonator coupled between the first node and the input port, the first resonator comprising'}a second node coupled to the first node; a second capacitor device, the second capacitor device comprising a second substrate member, the second substrate member having a second ...

FRONT END MODULE FOR 5.6 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

A front end module (FEM) for a 5.6 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.6 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.6 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.6 GHz PA, a 5.6 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device. 1. A 5.6 GHz front end module (FEM) device , the device comprising:a power amplifier (PA) electrically coupled to an input node;a 5.6 GHz resonator electrically coupled to the PA; anda diversity switch electrically coupled the 5.6 GHz BAW resonator, an output node, and an antenna.2. The device of wherein the PA comprises a 5.6 GHz power amplifier.3. The device of wherein the 5.6 GHz BAW resonator comprises a 5.6 GHz bulk acoustic wave (BAW) resonator.4. The device of wherein the diversity switch comprises a single pole two throw (SP2T) switch.5. The device of further comprising a low noise amplifier (LNA) electrically coupled to an LNA input node and an LNA output node.6. The device of wherein the LNA comprises a bypassable LNA.7. The device of further comprising a DC power detector having a voltage output claim 1 , the DC power detector being electrically coupled to the PA.8. The device of further comprising an RF power detector having an RF output from a directional coupler claim 1 , the RF power detector being electrically coupled to the PA.9. A 5.6 GHz front end module (FEM) device claim 1 , the device comprising:a power amplifier ...

PEDESTAL FOR VIBRATION ELEMENT, RESONATOR, AND OSCILLATOR

A pedestal for a vibration element includes a main body that includes two connection portions, two clearance portions, a mounting portion, and arm portions. The two connection portions are formed along long sides of the main body and contact the base plate. The two clearance portions are formed on insides of the main body with respect to the connection portions and formed along the long sides. The mounting portion is located between the two clearance portions. The vibration element is mounted to the mounting portion. The arm portions are formed on four corners of the main body and connect the mounting portion to the connection portions. A metal pattern is connected to an electrode formed on the vibration element. The metal pattern is formed to connect the mounting portion, the arm portions, and the connection portions. 1. A pedestal for a vibration element , the vibration element being mounted to the pedestal , the pedestal being installed to a base plate of a package , and the pedestal comprising: two connection portions that are formed along long sides of the main body and contact the base plate,', 'two clearance portions that are formed on insides of the main body with respect to the connection portions and formed along the long sides,', 'a mounting portion located between the two clearance portions, the vibration element being mounted to the mounting portion, and', 'arm portions that are formed on four corners of the main body and connect the mounting portion to the connection portions; and, 'a main body, includinga metal pattern, connected to an electrode formed on the vibration element,wherein the metal pattern is formed to connect the mounting portion, the arm portions, and the connection portions.2. The pedestal according to claim 1 , whereinthe metal pattern is connected to the connection portion via the arm portion closest to a part of the mounting portion connected to the electrode of the vibration element, andfurther the metal pattern is formed up to the ...

ELECTRONIC DEVICES FORMED IN A CAVITY BETWEEN SUBSTRATES

An electronic device includes a first substrate and a second substrate. A side wall joins the first substrate to the second substrate. The side wall includes a first alloy layer of a first metal and a second metal bonded directly to an upper surface of the first substrate and a second alloy layer of the first metal and a third metal disposed on top of the first alloy layer and bonded directly to a lower surface of the second substrate, the second metal and the third metal being different from each other and from the first metal. An electronic circuit is disposed on the lower surface of the second substrate within a cavity defined by the lower surface of the first substrate, the upper surface of the second substrate, and the side wall. 1. An electronic device comprising:a first substrate and a second substrate;a side wall joining the first substrate to the second substrate, the side wall including a first alloy layer of a first metal and a second metal bonded directly to an upper surface of the first substrate and a second alloy layer of the first metal and a third metal disposed on top of the first alloy layer and bonded directly to a lower surface of the second substrate, the second metal and the third metal being different from each other and from the first metal; andan electronic circuit disposed on the lower surface of the second substrate within a cavity defined by the lower surface of the first substrate, the upper surface of the second substrate, and the side wall.2. The electronic device of wherein the side wall is disposed about peripheries of the first and second substrates.3. The electronic device of wherein the second substrate includes a piezoelectric body.4. The electronic device of wherein the electronic circuit includes at least one of a film bulk acoustic resonator claim 3 , a bulk acoustic wave element claim 3 , a solidly mounted resonator claim 3 , and a surface acoustic wave element.5. The electronic device of wherein the first metal has a ...

Laterally Vibrating Bulk Acoustic Wave Resonator

A laterally vibrating bulk acoustic wave (LVBAW) resonator includes a piezoelectric plate sandwiched between first and second metal layers. The second metal layer is patterned into an interdigital transducer (IDT) with comb-shaped electrodes having interlocking fingers. The width and pitch of the fingers of the electrodes determine the resonant frequency. A combined thickness of the first and second metal layers and the piezoelectric layer is less than the pitch of the interlocking fingers. 1. A microelectromechanical system (MEMS) device comprising:a laterally vibrating bulk acoustic wave (LVBAW) resonator, the LVBAW resonator comprising:a substrate;an acoustic mirror overlying a portion of the substrate;a first metal layer overlying a portion of the acoustic mirror, the first metal layer having a first thickness;a piezoelectric plate overlying the first metal layer, the piezoelectric layer having a second thickness; anda second metal layer overlying a portion of the piezoelectric plate, the second metal layer having a third thickness, the second metal layer patterned into an interdigital transducer (IDT), the IDT having first and second comb-shaped electrodes, the first comb-shaped electrode having first fingers, the second comb-shaped electrode having second fingers, the first fingers interlocking with the second fingers, and a sum of the first, second and third thicknesses being less than a respective pitch of both first and second fingers.2. The MEMS device of claim 1 , wherein the acoustic mirror is a multiple layer Bragg mirror claim 1 , adjacent ones of the multiple layers have different acoustic impedance claim 1 , and a thickness of each of the multiple layers is selected for the Bragg mirror to have a minimal transmission coefficient at different frequencies.3. The MEMS device of claim 1 , wherein the IDT has opposite first and second sides claim 1 , and the second metal layer is patterned into a first side reflector having first metal strip lines ...

Resonator element, resonator, oscillator, electronic apparatus, and mobile object

A resonator element includes a substrate region sandwiched by first and second excitation electrodes. The region is located within a quadrangle having four 90° corners, a pair of first sides along a thickness-shear vibration direction, and a pair of second sides perpendicular to the vibration direction. The region includes a side or a circular arc in contact with each of the first and second sides, and an outer edge recessed from at least two corners of the quadrangle in a direction intersecting the vibration direction. Further, assuming a maximum length of the region along the vibration direction is Lx, and a length of the outer edge along the vibration direction is lx, 13.7%≦(lx/Lx)≦46.0%.

ELECTRONIC COMPONENT

An electronic component includes a piezoelectric substrate, a functional electrode on the piezoelectric substrate, a support layer on the piezoelectric substrate, a cover layer on the support layer, the cover layer, the support layer, and the piezoelectric substrate defining a hollow space that the functional electrode faces, and connection terminals that are electrically connected to the functional electrode, that are each made from a metal particle aggregate, and that each have a porous structure. The connection terminals are each located at a position in which the connection terminals overlap at least a portion of the hollow space in plan view. 1. An electronic component comprising:a piezoelectric substrate;a functional electrode that is disposed on the piezoelectric substrate;a support layer that is disposed on the piezoelectric substrate;a cover layer that is disposed on the support layer, the cover layer, the support layer, and the piezoelectric substrate defining a hollow space that the functional electrode faces; anda connection terminal that is electrically connected to the functional electrode, that is made from a metal particle aggregate, and that has a porous structure; whereinthe connection terminal is located at a position in which the connection terminal overlaps at least a portion of the hollow space in plan view.2. The electronic component according to claim 1 , wherein the connection terminal is disposed on the cover layer.3. The electronic component according to claim 1 , wherein the cover layer is made of a resin.4. The electronic component according to claim 1 , wherein the connection terminal has a rectangular or substantially rectangular planar shape.5. The electronic component according to claim 1 , further comprising:another functional electrode that is located above the functional electrode; andan element substrate that is located above the piezoelectric substrate; whereinthe another functional electrode is provided on the element substrate ...

ELECTRONIC MODULE AND METHOD OF MANUFACTURING ELECTRONIC MODULE

An electronic module includes a substrate, at least one first electronic component that includes a hollow portion, at least one second electronic component that includes no hollow portion, a first sealing resin, and a second sealing resin. The at least one first electronic component is sealed with the first sealing resin. The at least one second electronic component has a narrowest pitch between the electrodes that are provided on the mounting surface, and at least the mounting surface including the electrodes of the at least one second electronic component are sealed with the second sealing resin. The volume percentage of a filler that is included in the first sealing resin is larger than the volume percentage of a filler that is included in the second sealing resin. 1. An electronic module comprising:a substrate;at least one first electronic component that includes electrodes provided on a mounting surface thereof on the substrate and that includes a hollow portion;at least one second electronic component that includes electrodes provided on a mounting surface thereof on the substrate and that includes no hollow portion;a first sealing resin; anda second sealing resin; whereinthe at least one first electronic component is sealed with the first sealing resin;the at least one second electronic component has a narrowest pitch between the electrodes that are provided on the mounting surface, and at least the mounting surface including the electrodes of the at least one second electronic component are sealed with the second sealing resin; anda volume percentage of a filler that is included in the first sealing resin is larger than a volume percentage of a filler that is included in the second sealing resin.2. The electronic module according to claim 1 , wherein humidity resistance of the first sealing resin is higher than humidity resistance of the second sealing resin.3. The electronic module according to claim 1 , whereinthe first sealing resin is provided on one ...

MULTIPLEXER, HIGH-FREQUENCY FRONT END CIRCUIT, AND COMMUNICATION APPARATUS

A multiplexer includes a common terminal, a Band66 transmission-side filter, a Band30 transmission-side filter, and an inductance element. The Band66 transmission-side filter includes series arm resonators and parallel arm resonators. The frequency of spurious waves generated by the Band66 transmission-side filter is included in a pass band of the Band30 transmission-side filter. A transmission output terminal is connected to a common terminal with the inductance element interposed therebetween and is directly connected to one parallel arm resonator. The one parallel arm resonator has a largest capacitance, among the parallel arm resonators. 1. A multiplexer comprising:a common terminal;a first elastic wave filter and a second elastic wave filter having different pass bands; andan inductance element; wherein two input-output terminals;', 'one or more series arm resonators disposed in a path between the two input-output terminals; and', 'two or more parallel arm resonators disposed between the path and ground;, 'the first elastic wave filter includesa frequency of spurious waves generated by the first elastic wave filter is included in the pass band of the second elastic wave filter;the second elastic wave filter is directly connected to the common terminal;the input-output terminal at the common terminal side, among the two input-output terminals, is connected to the common terminal with the inductance element interposed therebetween and is directly connected to one parallel arm resonator, among the two or more parallel arm resonators; andthe one parallel arm resonator has a largest capacitance, among the two or more parallel arm resonators.2. The multiplexer according to claim 1 , wherein a piezoelectric film including one surface on which interdigital transducer electrodes of the one or more series arm resonators and the two or more parallel arm resonators are provided;', 'a high acoustic velocity support substrate in which an acoustic velocity of bulk waves ...

Support Structure for Bulk Acoustic Wave Resonator

Devices and processes for preparing devices are described for a bulk acoustic wave resonator. A stack includes a first electrode that is coupled to a first side of a piezoelectric layer and a second electrode that is coupled to a second side of the piezoelectric layer. The stack is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. A cavity frame is coupled to the first electrode and to the substrate. The cavity frame forms a perimeter around a cavity. Optionally, a heat dissipating frame is formed and coupled to the second electrode. The cavity frame and/or the heat dissipating frame improve the thermal stability of the bulk acoustic resonator. 1. A bulk acoustic resonator , comprising: a first electrode (bottom electrode) coupled to a first side of a piezoelectric layer; and', 'a second electrode (top electrode) coupled to a second side of the piezoelectric layer;, 'a stack that includeswherein the stack is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode; anda cavity frame coupled to the first electrode and to the substrate, wherein the cavity frame forms a perimeter around a cavity.2. The bulk acoustic resonator of claim 1 , wherein the cavity is formed by removing sacrificial material from a region below the stack and above the substrate.3. The bulk acoustic resonator of claim 1 , wherein the cavity is bounded by the first electrode claim 1 , the substrate claim 1 , and the cavity frame.4. The bulk acoustic resonator of claim 1 , including a planarizing material coupled to the first electrode and to a substrate; wherein the cavity frame forms a boundary between the planarizing material and the cavity.5. The bulk acoustic resonator of claim 1 , wherein the cavity frame is configured to dissipate heat generated by the stack.6. The bulk acoustic resonator of claim 1 , wherein the cavity frame includes at least one material ...

ELASTIC WAVE DEVICE, HIGH-FREQUENCY FRONT-END CIRCUIT, AND COMMUNICATION DEVICE

An elastic wave device includes a support substrate made of silicon, a piezoelectric film disposed directly or indirectly on the support substrate, and an interdigital transducer electrode disposed on one surface of the piezoelectric film. A higher-order mode acoustic velocity of propagation through the piezoelectric film is equal or substantially equal to an acoustic velocity V=(V)of propagation through silicon or higher than the acoustic velocity V, where Vis specified by Vamong solutions V, V, and Vwith respect to x derived from Ax+Bx+Cx+D=0. 1. An elastic wave device comprising:a support substrate made of silicon;a piezoelectric film disposed directly or indirectly on the support substrate;a dielectric film disposed between the support substrate and the piezoelectric film; andan interdigital transducer electrode disposed on one surface of the piezoelectric film; whereinthe dielectric film is made of silicon oxide,a film thickness of the dielectric film is about 0.4λ or less, where a wavelength of an elastic wave, which is determined in accordance with an electrode finger pitch of the interdigital transducer electrode, is denoted as λ,{'sub': 'si', 'claim-text': {'br': None, 'i': V', 'V, 'sub': si', '1, 'sup': '1/2', '=()(m/sec)\u2003\u2003formula (1),'}, 'a higher-order mode acoustic velocity of propagation through the piezoelectric film is equal or substantially equal to an acoustic velocity Vdenoted by formula (1) or higher than the acoustic velocity Vsi,'}{'sub': '1', 'claim-text': {'br': None, 'i': Ax', '+Bx', '+Cx+D=, 'sup': 3', '2, '0\u2003\u2003formula (2),'}, 'in the formula (1), Vis a solution to formula (2), wherein'} [{'br': None, 'i': 'A=−ρ', 'sup': '3', 'formula (2A),'}, {'br': None, 'i': B=ρ', 'L', '+L', '+L, 'sup': '2', 'sub': 11', '22', '33, '()\u2003\u2003formula (2B),'}, {'br': None, 'i': C', 'L', '+L', '+L', '−L', '·L', '−L', '·L', '−L', '·L, 'sub': 21', '23', '31', '11', '33', '22', '33', '11', '22, 'sup': 2', '2', '2, '=ρ()\u2003\ ...

Electrode Defined Resonator

A bulk acoustic resonator operable in a bulk acoustic mode includes a resonator body mounted to a separate carrier that is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and a top conductive layer on the piezoelectric layer opposite the device layer. A surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to the carrier. 1. A bulk acoustic resonator comprising:a resonator body including:a piezoelectric layer;a device layer; anda top conductive layer on the piezoelectric layer opposite the device layer, wherein substantially all of a surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to a carrier that is separate from the resonator body.2. The bulk acoustic resonator of claim 1 , wherein all of the surface of the device layer opposite the piezoelectric layer is for mounting the entirety of the resonator body to the carrier.3. The bulk acoustic resonator of claim 1 , further comprising a connecting structure for conducting a signal to the top conductive layer.4. The bulk acoustic resonator of claim 1 , wherein the device layer comprises diamond.5. The bulk acoustic resonator of claim 1 , wherein the top conductive layer comprises spaced conductive lines or fingers.6. The bulk acoustic resonator of claim 1 , wherein the resonator body further comprises a bottom conductive layer between the piezoelectric layer and the device layer.7. The bulk acoustic resonator of claim 1 , wherein the surface of the device layer facing the carrier is for mounting in its entirety directly to the carrier.8. The bulk acoustic resonator of claim 1 , wherein the resonator body further comprises at least one temperature compensation layer positioned:on the top conductive layer opposite the piezoelectric layer; orbetween the piezoelectric layer and the device layer.9. The bulk acoustic resonator of claim 1 , wherein:the resonator body further comprises a ...

COMMUNICATION MODULE

A communication module includes: a first substrate having a first surface; a second substrate having a second surface, the second surface facing the first surface across an air gap; a first filter located on the first surface, a passband of the first filter being either one of a transmit band and a receive band of a first band, the first band being a frequency division duplex band; and a second filter located on the second surface, at least a part of the second filter overlapping with at least a part of the first filter in a stacking direction in which the first substrate and the second substrate are stacked, a passband of the second filter being at least one of a transmit band and a receive band of a second band, the second band differing from the first band. 1. A communication module comprising:a first substrate having a first surface;a second substrate having a second surface, the second surface facing the first surface across an air gap;a first filter located on the first surface, a passband of the first filter being either one of a transmit band and a receive band of a first band, the first band being a frequency division duplex band; anda second filter located on the second surface, at least a part of the second filter overlapping with at least a part of the first filter in a stacking direction in which the first substrate and the second substrate are stacked, a passband of the second filter being at least one of a transmit band and a receive band of a second band, the second band differing from the first band.2. The communication module according to claim 1 , whereinthe first filter and the second filter are not used for communication at the same time.3. The communication module according to claim 1 , whereinat least a part of a ground terminal of the first filter and at least a part of a ground terminal of the second filter are electrically connected on at least one of the first surface and the second surface.4. The communication module according to claim 1 ...

Method for Packaging an Electronic Component in a Package with an Organic Back End

A method for fabricating an array of front ends for an array of packaged electronic components that each comprise: 1. A method for fabricating an array of front ends for an array of packaged electronic components that each comprise:an electrical element packaged within a package comprisinga front part of a package comprising an inner section with a cavity therein opposite the resonator defined by the raised frame and an outer section sealing said cavity; and i. Obtaining a carrier substrate having an active membrane layer attached thereto by its rear surface, with a front electrode on the front surface of the active membrane layer;', 'ii. Obtaining an inner front end section;', 'iii. Attaching the inner front end section to the exposed front surface of the front electrode;', 'iv. Detaching the carrier substrate from the rear surface of the active membrane layer;', 'v. Optionally thinning the inner front section;', 'vi. Processing the rear surface by removing material to create an array of at least one island of active membrane on at least one island of front electrode;', 'vii. Creating an array of at least one front cavity by selectively removing at least outer layer of the inner front end section, such that there is one cavity opposite each island of membrane on the front side of the front electrode on the opposite side to the island of active membrane;', 'viii. Applying an outer front end section to the inner front end section and bonding the outer front end section to an outer surface of the inner front end section such that the outer front end section spans across and seals the at least one cavity of the array of front cavities., 'a back part of the package comprising a back cavity in an inner back section, and an outer back section sealing the cavity, said back package further comprising a first and a second via through the back end around said at least one back cavity for coupling to front and back electrodes of the electronic component; the vias terminating ...

HIGH-FREQUENCY MODULE

A high-frequency module includes a module substrate including an internal wiring pattern, and a SAW filter including a piezoelectric substrate, an electrode pattern on the piezoelectric substrate, a support surrounding the electrode pattern, and a cover on the support covering the electrode pattern to define a hollow space together with the support and the piezoelectric substrate. The module substrate, the cover, and the piezoelectric substrate are disposed in this order in a perpendicular or substantially perpendicular direction with respect to the module substrate, and a shield electrode is provided on a surface of the cover that faces the module substrate or on a surface of the cover that faces the piezoelectric substrate. 1. A high-frequency module comprising:a module substrate that includes an internal wiring pattern;a surface acoustic wave filter that is disposed on the module substrate; anda resin member that covers the surface acoustic wave filter; wherein a piezoelectric substrate;', 'an electrode pattern that is provided on the piezoelectric substrate;', 'a support that is provided on a surface of the piezoelectric substrate so as to surround the electrode pattern; and', 'a cover that is provided on the support and that covers the electrode pattern so as to define a hollow space together with the support and the piezoelectric substrate;, 'the surface acoustic wave filter includesthe module substrate, the cover, and the piezoelectric substrate are disposed in this order in a perpendicular or substantially perpendicular direction with respect to the module substrate; anda shield electrode that is grounded is provided in or on a surface of the cover that faces the module substrate or is provided in or on a surface of the cover that faces the piezoelectric substrate.2. The high-frequency module according to claim 1 , wherein the shield electrode overlaps at least a portion of the electrode pattern when the module substrate is viewed in plan view.3. The high- ...

Circuit module

A circuit module includes a duplexer mounted on a module board and a cover layer is stacked on an insulating layer that is disposed on one principal surface of a device board so as to enclose a predetermined area thereof. A transmission filter device and a reception filter device that have different transmission bands are provided on the one principal surface of the device board in the predetermined area thereof within the space enclosed by the insulating layer between the device board and the cover layer. Accordingly, the duplexer does not include a package board as in the existing technique, and in turn a circuit module including the duplexer mounted on the module board is significantly reduced in height and in size.

UNIT, OSCILLATOR AND ELECTRONIC APPARATUS

A unit comprising a quartz crystal resonator having an overall length less than 2.1 mm and a base portion including a length less than 0.5 mm and a width less than 0.55 mm, and vibrational arms, mounting arms being connected to the base portion through connecting portions, each vibrational arm having a first vibrational portion including a first width and a first length within a range of 0.32 mm to 0.72 mm and a second vibrational portion including a second width greater than the first width and a second length less than the first length, a groove being formed in at least one of opposite main surfaces of the first vibrational portions of the vibrational arms, a width of the groove being less than 0.07 mm and a distance in the width direction of the groove measured from an outer edge of the groove to an outer edge of the corresponding arm being less than 0.015 mm, a width of the mounting arms being less than 0.45 mm and a width of the connecting portions being less than 0.41 mm, the second width being greater than a spaced-apart distance between the second vibrational portions. 1. A unit comprising: a quartz crystal resonator having an overall length less than 2.1 mm and a base portion including a length less than 0.5 mm and a width less than 0.55 mm , and first and second vibrational arms connected to the base portion , a plurality of mounting arms comprising first and second mounting arms being connected to the base portion , each of the first and second vibrational arms comprising a plurality of vibrational portions having a first vibrational portion including a first width and a first length within a range of 0.32 mm to 0.72 mm and a second vibrational portion including a second width greater than the first width and a second length less than the first length , the first vibrational portion of each of the first and second vibrational arms having a first main surface and a second main surface opposite the first main surface;wherein at least one groove is formed in ...

SURFACE ACOUSTIC WAVE DEVICE

A surface acoustic wave device includes, on a substrate, functional electrode units each including at least one IDT electrode, wiring electrodes connected to the functional electrode units, insulation films provided between the wiring electrode and the substrate, and a support member that surrounds the functional electrode units and at least a portion of the wiring electrodes. A thickness of the support member is larger than a thickness of the insulation films, and the insulation films and the support member are made of the same material. 1. A surface acoustic wave device comprising:a substrate;a functional electrode unit located on the substrate and including at least one IDT electrode;a wiring electrode that is connected to the functional electrode unit and is located on the substrate;an insulation film that is provided between a portion of the wiring electrode and the substrate;a support member that is provided on the substrate and surrounds the functional electrode unit and at least a portion of the wiring electrode; anda cover member that defines, along with the support member, a hollow space in which the functional electrode unit is located; whereina thickness of the support member is larger than a thickness of the insulation film, and the insulation film and the support member are made of the same material;the wiring electrode includes a first wiring electrode and a second wiring electrode;a three-dimensional crossing section where the first wiring electrode and the second wiring electrode cross each other in a three-dimensional manner is provided;the support member is present above at least a portion of the second wiring electrode in the three-dimensional crossing section;the insulation film is located under the second wiring electrode in the three-dimensional crossing section; andthe first wiring electrode is located under the insulation film.2. The surface acoustic wave device according to claim 1 , wherein the three-dimensional crossing section is ...

RESONATOR AND RESONANCE DEVICE

A resonator is provided that suppresses a shift in resonant frequency. The resonator includes a vibration member including vibration arms extending therefrom with two or more of the vibration arms performing out-of-plane bend with different phases. Moreover, the resonator includes a base having a front end connected to the vibration arms and a rear end opposing the front end and structured to bend in a direction of the out-of-plane bend when the vibration arms perform the out-of-plane bend. Moreover, a frame surrounds a periphery of the vibration member and one or more holding arms are positioned between the vibration member and the frame. One end of each holding arm is connected to the base and the other end of the holding arm is connected to the frame. The holding arms bend in the direction of the out-of-plane bend when the base bends. 1. A resonator comprising: at least three vibration arms each having a fixed end and an open end, with at least two of the vibration arms configured to perform an out-of-plane bend with different phases, and', 'a base having a front end coupled to the respective fixed ends of the at least three vibration arms and a rear end opposing the front end, the rear end being configured to bend in a direction of the out-of-plane bend when the at least two vibration arms perform the out-of-plane bend;, 'a vibration member includinga frame at least partially surrounding a periphery of the vibration member; andat least one holding arm disposed between the vibration member and the frame,wherein a first end of the at least one holding arm is connected to the base and a second end of the at least one holding arm is connected to the frame, andwherein the at least one holding arm bends in the direction of the out-of-plane bend when the base bends.2. The resonator according to claim 1 , wherein a portion between the at least two vibration arms performing the out-of-plane bend with different phases is a node.3. The resonator according to claim 1 , ...

PIEZOELECTRIC RESONATOR DEVICE

A piezoelectric resonator device having a sandwich structure is provided, which is capable of improving reliability while ensuring hermeticity of the internal space in which a vibrating part of the piezoelectric resonator plate is sealed. A crystal resonator includes: a crystal resonator plate a first sealing member covering a first excitation electrode of the crystal resonator plate and a second sealing member covering a second excitation electrode of the crystal resonator plate A third through hole is formed in the crystal resonator plate to penetrate between a first main surface and a second main surface A through electrode of the third through hole is conducted to the first excitation electrode A seventh through hole is formed in the first sealing member to penetrate between a first main surface and a second main surface The through electrode of the third through hole is conducted to the through electrode of the seventh through hole The third through hole is not superimposed to the seventh through hole in plan view. 1. A piezoelectric resonator device , comprising: a first sealing member covering the first excitation electrode of the piezoelectric resonator plate;', 'a second sealing member covering the second excitation electrode of the piezoelectric resonator plate; and', 'an internal space formed by bonding the first sealing member to the piezoelectric resonator plate and by bonding the second sealing member to the piezoelectric resonator plate, the internal space hermetically sealing a vibrating part including the first excitation electrode and the second excitation electrode of the piezoelectric resonator plate,', 'wherein through holes for the piezoelectric resonator plate are formed in the piezoelectric resonator plate so as to penetrate between the first main surface and the second main surface, the through holes for the piezoelectric resonator plate including: respective through electrodes for establishing conduction between electrodes formed on the ...

RF BAW RESONATOR FILTER ARCHITECTURE FOR 6.5GHZ WI-FI 6E COEXISTENCE AND OTHER ULTRA-WIDEBAND APPLICATIONS

A multi-stage matching network filter circuit device. The device comprises bulk acoustic wave (BAW) resonator device having an input node, an output node, and a ground node. A first matching network circuit is coupled to the input node. A second matching network circuit is coupled to the output node. A ground connection network circuit coupled to the ground node. The first or second matching network circuit can include an inductive ladder network including a plurality of series inductors in a series configuration and a plurality of grounded inductors wherein each of the plurality of grounded inductors is coupled to the connection between each connected pair of series inductors. The inductive ladder network can include one or more LC tanks, wherein each of the one or more LC tanks is coupled between a connection between a series inductor and a subsequent series inductor, which is also coupled to a grounded inductor. 1. A multi-stage matching network filter circuit device , the device comprising:a bulk acoustic wave (BAW) resonator device having an input node, an output node, and a ground connection region;a first matching network circuit coupled to the input node;a second matching network circuit coupled to the output node; anda ground connection network circuit coupled to the ground connection region and a circuit ground node.2. The device of wherein the first matching network circuit or the second matching network circuit comprises one or more series inductors and one or more grounded inductors configured as an inductive ladder network.3. The device of wherein the inductive ladder network includes one or more LC tanks claim 2 , wherein each of the one or more LC tanks is coupled to one of the one or more series inductors.4. The device of wherein the inductive ladder network includes one or more shunt capacitors claim 2 , wherein each of the one or more shunt capacitors is coupled between one of the one or more grounded inductors and the circuit ground node.5. The ...

Electronic device with solder interconnect and multiple material encapsulant

The disclosure is directed to an electronic device with a solder interconnect and multiple material encapsulant. The electronic device includes a die last assembly with the die assembled to an electronic packaging substrate by a solder interconnect. At least a portion of a first dielectric material and the die are milled or ground, with a second dielectric material applied over an exposed portion of the die. A shield is then positioned over and electrically insulated from the die. Accordingly, such a configuration reduces a thickness or height of an electronic device with shielding and a die last assembly.

Electro acoustic rf filter with impedance element having improved performance and multiplexer component comprising the filter

An improved electro acoustic RF filter (FC) is provided. The RF filter comprises an electro acoustic resonator (EAR) connected between an input port and an output port, an impedance element and a damping and/or dissipation element (DE) in mechanical contact to the impedance element. The damping and/or dissipation element is provided and configured to remove acoustic energy from the impedance element which has a similar construction as the resonator on the same substrate. With such a construction an acoustically inactive impedance element (AIIE) is obtained.

Resonator Device, Electronic Apparatus, And Vehicle

A resonator device includes a first resonator that generates a reference clock signal, a second resonator that generates a first clock signal having a frequency adjusted based on the reference clock signal, and a circuit device that includes a temperature sensor for performing temperature compensation on an oscillation frequency of the first resonator. The temperature sensor is disposed on the circuit device such that the first resonator overlaps the temperature sensor in a plan view. 1. A resonator device comprising:a first resonator configured to generate a reference clock signal;a second resonator configured to generate a first clock signal, the first clock signal having a frequency adjusted based on the reference clock signal; and a substrate; and', 'a temperature sensor configured to perform temperature compensation of an oscillation frequency of the first resonator,, 'a circuit device that includeswherein the first resonator is disposed on the circuit device so as to overlap the temperature sensor in a plan view.2. The resonator device according to claim 1 ,wherein the first resonator is supported on the circuit device by a first support, andthe second resonator is supported on the circuit device by a second support.3. The resonator device according to claim 2 ,wherein the first support electrically connects a terminal electrode of the first resonator and a first terminal of the circuit device, andthe second support electrically connects a terminal electrode of the second resonator and a second terminal of the circuit device.4. The resonator device according to claim 2 ,wherein the first support and the second support are conductive bumps.5. The resonator device according to claim 1 ,wherein a combined area of the first resonator and the second resonator is smaller than an area of the circuit device in the plan view.6. The resonator device according to claim 1 , further comprising:a third resonator configured to generate a second clock signal, the second clock ...

BONDING METHOD

A bonding layer is formed over a piezoelectric material substrate, and the bonding layer is made of or more material selected from the group consisting of silicon nitride, aluminum nitride, alumina, tantalum pentoxide, mullite, niobium pentoxide and titanium oxide. Neutralized beam A is irradiated onto a surface of the bonding layer and a surface of a supporting body to activate the surface of the bonding layer and the surface of the supporting body. The surface of the bonding layer and the surface of the supporting body are bonded by direct bonding. 1. A method of bonding a piezoelectric material substrate and a supporting body comprising a single crystal , said method comprising the steps of:providing a silicon oxide film on said piezoelectric material substrate;forming a bonding layer on said silicon oxide film, said bonding layer comprising one or more material selected from the group consisting of silicon nitride, aluminum nitride, alumina, tantalum pentoxide, mullite, niobium pentoxide and titanium oxide;irradiating a neutralized beam onto a surface of said bonding layer and a surface of said supporting body to activate said surface of said bonding layer and said surface of said supporting body; andbonding said surface of said bonding layer and said surface of said supporting body by direct bonding.2. The method of claim 1 , further comprising the step of processing said piezoelectric material substrate to form a roughened surface claim 1 , wherein said silicon oxide film and said bonding layer are provided on said roughened surface.3. The method of claim 1 , wherein said surface of said bonding layer is activated after said surface of said bonding layer is flattened.4. The method of claim 1 , wherein said supporting body comprises a material selected from the group consisting of silicon claim 1 , sapphire and quartz.5. The method of claim 1 , wherein said piezoelectric material substrate comprises a piezoelectric single crystal.6. The method of claim 5 , ...

Elastic wave device and manufacturing method therefor

An elastic wave device includes an interdigital transducer electrode and a wiring electrode made of metal and provided on a first main surface of a piezoelectric substrate. Via hole electrodes penetrate the piezoelectric substrate. Each via hole electrode is connected to an external connection terminal. A cover member defines a hollow space in which the interdigital transducer electrode is sealed, together with the first main surface of the piezoelectric substrate. A heat dissipating member is provided on the wiring electrode to extend from the wiring electrode toward the cover member and penetrate the cover member.

ACOUSTIC WAVE FILTER DEVICE

An acoustic wave filter device includes resonance portions, first and second metal pads. The resonance portions each includes a lower electrode disposed on a substrate, a piezoelectric layer disposed on at least a portion of the lower electrode, and an upper electrode disposed on at least a portion of the piezoelectric layer. The first metal pads are connected to one of the upper electrode and the lower electrode of a corresponding resonance portion among the resonance portions. The second metal pads are disposed outwardly of an active region and connected to the other one of the upper electrode and the lower electrode of adjacent resonant portions among the resonance portions. A ring portion is disposed outwardly of the active region in which the lower electrode, the piezoelectric layer, and the upper electrode overlap is disposed only on a portion of any one of the first and second metal pads. 1. An acoustic wave filter device , comprising:resonance portions each comprising a lower electrode disposed on a substrate, a piezoelectric layer disposed on at least a portion of the lower electrode, and an upper electrode disposed on at least a portion of the piezoelectric layer;first metal pads connected to one of the upper electrode and the lower electrode of a corresponding resonance portion among the resonance portions; andsecond metal pads disposed outwardly of an active region and connected to the other one of the upper electrode and the lower electrode of adjacent resonant portions among the resonance portions,wherein a ring portion disposed outwardly of the active region in which the lower electrode, the piezoelectric layer, and the upper electrode overlap is disposed only on a portion of any one of the first and second metal pads.2. The acoustic wave filter device according to claim 1 , wherein the ring portion is disposed to surround a portion of the active region.3. The acoustic wave filter device according to claim 1 , wherein the first metal pads are ...

ACOUSTIC WAVE FILTER DEVICE, DUPLEXER, RADIO FREQUENCY FRONT END CIRCUIT AND COMMUNICATION APPARATUS

The acoustic wave filter (A) includes a parallel-arm resonant circuit (). The parallel-arm resonant circuit () includes a parallel-arm resonator (p) and a frequency variable circuit () that are connected in parallel. The frequency variable circuit () includes a parallel-arm resonator (p) that has a resonant frequency higher than that of the parallel-arm resonator (p) and a switch (SW) element. A frequency difference between a resonant frequency on a higher frequency side of the parallel-arm resonant circuit () in a case where the switch (SW) is OFF and a resonant frequency on a higher frequency side of the parallel-arm resonant circuit () in a case where the switch (SW) is ON is equal to or more than a frequency difference between a low frequency end frequency of the second attenuation band and a low frequency end frequency of the first attenuation band. 1. An acoustic wave filter device that switches between first filter characteristics that transmit a radio frequency signal in a first pass band and attenuate a radio frequency signal in a first attenuation band allocated to a higher frequency side than the first pass band and second filter characteristics that transmit a radio frequency signal in a second pass band that is allocated to a higher frequency side than the first pass band and attenuate a radio frequency signal in a second attenuation band allocated to a higher frequency side than the second pass band , the acoustic wave filter device comprising:a series-arm circuit that is connected between a first input/output terminal and a second input/output terminal; anda parallel-arm resonant circuit that is connected to a node on a path connecting the first input/output terminal to the second input/output terminal and a ground, a first acoustic wave resonator, and', 'a frequency variable circuit that is connected in parallel with the first acoustic wave resonator, the frequency variable circuit varying a resonant frequency and an anti-resonant frequency of the ...

PHASING LINE HOLDERS

Systems and methods for phasing line holders are described herein. In certain embodiments, an apparatus includes a groove in a conductive body. Additionally, the apparatus includes a phasing line for electrically coupling a plurality of components, the phasing line extending through the groove. Further, the apparatus includes a holder inserted into the groove, the holder maintaining the phasing line at a specific position in relation to a plurality of groove surfaces, wherein a plurality of holder surfaces apply sufficient pressure to the plurality of groove surfaces to secure the holder within the groove. 1. An apparatus comprising:a groove in a conductive body;a phasing line for electrically coupling a plurality of components, the phasing line extending through the groove; anda holder inserted into the groove, the holder maintaining the phasing line at a specific position in relation to a plurality of groove surfaces, wherein a plurality of holder surfaces apply sufficient pressure to the plurality of groove surfaces to secure the holder within the groove.2. The apparatus of claim 1 , further comprising an insertion object claim 1 , wherein the insertion object is inserted into a slot in the holder claim 1 , the insertion object pushing opposite holder side surfaces in the plurality of holder surfaces against surfaces in the plurality of groove surfaces.3. The apparatus of claim 2 , wherein the insertion object comprises:a specialized tip that slides into the slot in the holder and displaces the holder; anda forcing mechanism that pushes the specialized tip into the holder and maintains the specialized tip within the slot.4. The apparatus of claim 1 , wherein the holder includes:a holder base that supports the phasing line at the specific position; anda securing mechanism that physically couples to the holder base and is movably rotated to apply the sufficient pressure to the plurality of groove surfaces.5. The apparatus of claim 4 , wherein pressure applied by ...

INTEGRATED RADIO FREQUENCY (RF) FRONT-END MODULE (FEM)

Embodiments may relate to a radio frequency (RF) front-end module (FEM) that includes an acoustic wave resonator (AWR) die. The RF FEM may further include an active die coupled with the package substrate of the RF FEM. When the active die is coupled with the package substrate, the AWR die may be between the active die and the package substrate. Other embodiments may be described or claimed. 1. A radio frequency (RF) front-end module (FEM) comprising:a package substrate;an acoustic wave resonator (AWR) die; andan active die coupled with the package substrate such that the AWR die is between the active die and the package substrate.2. The RF FEM of claim 1 , wherein the AWR die is coupled with the package substrate.3. The RF FEM of claim 1 , wherein the AWR die is physically and communicatively coupled with the active die.4. The RF FEM of claim 1 , wherein the AWR die includes a plurality of resonators.5. The RF FEM of claim 1 , wherein the AWR die is a first AWR die claim 1 , and wherein the RF FEM includes a second AWR die between the active die and the package substrate.6. The RF FEM of claim 5 , wherein the first AWR die is related to a first frequency band and the second AWR die is related to a second frequency band that is different than the first frequency band.7. The RF FEM of claim 1 , wherein the active die includes circuitry related to RF control logic claim 1 , a switch claim 1 , a power-management integrated circuit (PMIC) claim 1 , a power amplifier claim 1 , a mixer claim 1 , or a phase shifter.8. The RF FEM of claim 1 , wherein the RF FEM has a z-height claim 1 , as measured in a direction perpendicular to a face of the package substrate to which the active die is coupled claim 1 , of less than 800 micrometers.9. A method of manufacturing a radio frequency (RF) front-end module (FEM) claim 1 , wherein the method comprises:positioning a first acoustic wave resonator (AWR) die adjacent to a package substrate; andcoupling an active die with the package ...

COUPLED MEMS RESONATOR

A microelectromechanical resonator includes a support structure, a resonator element suspended to the support structure, and an actuator for exciting the resonator element to a resonance mode. The resonator element includes a plurality of adjacent sub-elements each having a length and a width and a length-to-width aspect ratio of higher than 1 and being adapted to a resonate in a length-extensional, torsional or flexural resonance mode. Further, each of the sub-elements is coupled to at least one other sub-element by one or more connection elements coupled to non-nodal points of the of said resonance modes of the sub-elements for exciting the resonator element into a collective resonance mode. 2. The resonator according to claim 1 , wherein at least two of the sub-elements are coupled to each other in the width direction thereof claim 1 , whereby said connection elements comprise at least two essentially rigid connection elements abutting an elongated trench that remains between the sub-elements and extends in the length direction thereof. The aspects of the disclosed embodiments relate to microelectromechanical (MEMS) resonators. In particular, the aspects of the disclosed embodiments relate to length-extensional, torsional or flexural mode resonators.Electromechanical resistance, also known as equivalent series resistance (ESR) is an important performance parameter of a resonator. Compared with traditional quartz crystals, ESR tends to be high in particular in piezoelectrically actuated beam resonators, such as length-extensional (LE) resonators, since the fundamental LE mode can exist in a beam resonator only when the length-to-width aspect ratio is higher than 1, i.e. in a beam that is longer than the width of the beam, and Nth overtone LE mode can exist in a beam resonator whose length-to-width aspect ratio is higher than N. Since the ESR of an LE modes decreases when the width of the beam increases, wider beams would be preferred to get lower ESR. However, the ...

Acoustic resonator filter

An acoustic resonator filter includes at least one series acoustic resonator electrically connected between a first port and a second port in series, through which a radio frequency (RF) signal passes; at least one second shunt acoustic resonator electrically shunt-connected between the at least one series acoustic resonator and a ground; and at least one first shunt acoustic resonator electrically shunt-connected between the at least one series acoustic resonator and a ground and having a resonance frequency higher than a resonance frequency of the at least one second shunt acoustic resonator. At least one shunt acoustic resonator, among the at least one first shunt acoustic resonator and the at least one second shunt acoustic resonator has a temperature coefficient of frequency (TCF) corresponding to resonance frequency sensitivity more insensitive than resonance frequency sensitivity according to a change in temperature of the at least one series acoustic resonator filter.

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, CIRCUIT SUBSTRATE, AND ELECTRONIC APPARATUS

A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side. 1. A device comprising:a semiconductor substrate including a first face and a second face on a side opposite to the first face;an external connection terminal formed on the first face of the semiconductor substrate;a first electrode formed on the first face of the semiconductor substrate and electrically connected to the external connection terminal;a second electrode formed on the first face of the semiconductor substrate;an integrated circuit formed on the first face, the integrated circuit being electrically connected to the first electrode and the second electrode;a rear face electrode formed on the second face of the semiconductor substrate;a groove portion formed in the semiconductor substrate, the groove portion having an inner wall;an insulating film formed on side walls of the groove portion; anda conductive portion formed inside the groove portion on the insulating portion and electrically connected to the second electrode and the rear face electrode;wherein the integrated circuit and the first electrode are electrically disposed between the second electrode and the external connection terminal.2. The device of claim 1 , wherein the semiconductor substrate is silicon.3. The device of claim 2 , wherein:the second electrode comprises a second electrode rear face facing the first face of the semiconductor substrate;the rear face electrode comprises a rear face ...

COMPOSITE FILTER DEVICE, HIGH-FREQUENCY FRONT END CIRCUIT, AND COMMUNICATION APPARATUS

A composite filter device includes a common terminal disposed on an element substrate including a piezoelectric layer, first and second band pass filters disposed on the element substrate, and connected at one end thereof to the common terminal, a shield electrode interposed between a signal line and the first band pass filter, the signal line being disposed on the element substrate and connecting the common terminal to the first and second band pass filters, and an inductor connected between the shield electrode and a reference potential line. 1. A composite filter device comprising:an element substrate including a piezoelectric layer;a common terminal disposed on the element substrate;a first band pass filter connected at one end thereof to the common terminal, disposed on the element substrate, and including an acoustic wave resonator;a second band pass filter connected at one end thereof to the common terminal, disposed on the element substrate, and including an acoustic wave resonator;a signal line disposed on the element substrate and connecting the one end of each of the first and second band pass filters to the common terminal;a reference potential line disposed on the element substrate and connected to the second band pass filter;a shield electrode disposed on the element substrate, interposed between the signal line and the first band pass filter, and electrically connected to the reference potential line; andan inductor electrically connected between the shield electrode and the reference potential line.2. The composite filter device according to claim 1 , wherein the signal line is opposite to the second band pass filter claim 1 , with the first band pass filter interposed therebetween.3. The composite filter device according to claim 1 , wherein the first band pass filter includes a plurality of acoustic wave resonators.4. The composite filter device according to claim 3 , wherein the plurality of acoustic wave resonators include series arm resonators ...

ELASTIC WAVE DEVICE

An elastic wave device includes a piezoelectric substrate, an interdigital transducer electrode on the piezoelectric substrate, a support on the piezoelectric substrate, including a cavity, and surrounding the interdigital transducer electrode at the cavity, a cover covering the cavity and provided on the support, and a via hole electrode penetrating the cover and the support. The via hole electrode includes a projection portion projecting outward from a side surface portion when seen in a plan view. The projection portion is located within the cover. 1. An elastic wave device comprising:a piezoelectric substrate;an interdigital transducer electrode provided on the piezoelectric substrate;a support provided on the piezoelectric substrate, including a cavity, and surrounding the interdigital transducer electrode at the cavity;a cover covering the cavity and provided on the support; anda via hole electrode penetrating the cover and the support and including a first end portion located at a piezoelectric substrate side, a second end portion located at a side opposite to the piezoelectric substrate side, and a side surface portion connecting an outer edge of the first end portion and an outer edge of the second end portion; whereinthe via hole electrode includes a projection portion projecting outward from the side surface portion when seen in a plan view;the projection portion is located within the cover;the projection portion includes a first projection surface and a second projection surface located at an end portion side with respect to the first projection surface;the first projection surface and the second projection surface extend in a direction crossing a direction in which a via hole electrode extends;the cover includes an adhesive layer bonded to the support and a protective layer provided on the adhesive layer;the first projection surface is in contact with a surface at an adhesive layer side of the protective layer; andthe second projection surface is in ...